WorldWideScience

Sample records for voltage sensor trapping

  1. Intermediate state trapping of a voltage sensor

    DEFF Research Database (Denmark)

    Lacroix, Jérôme J; Pless, Stephan Alexander; Maragliano, Luca

    2012-01-01

    Voltage sensor domains (VSDs) regulate ion channels and enzymes by undergoing conformational changes depending on membrane electrical signals. The molecular mechanisms underlying the VSD transitions are not fully understood. Here, we show that some mutations of I241 in the S1 segment of the Shaker...... Kv channel positively shift the voltage dependence of the VSD movement and alter the functional coupling between VSD and pore domains. Among the I241 mutants, I241W immobilized the VSD movement during activation and deactivation, approximately halfway between the resting and active states......, and drastically shifted the voltage activation of the ionic conductance. This phenotype, which is consistent with a stabilization of an intermediate VSD conformation by the I241W mutation, was diminished by the charge-conserving R2K mutation but not by the charge-neutralizing R2Q mutation. Interestingly, most...

  2. Neutralization of Gating Charges in Domain II of the Sodium Channel α Subunit Enhances Voltage-Sensor Trapping by a β-Scorpion Toxin

    Science.gov (United States)

    Cestèle, Sandrine; Scheuer, Todd; Mantegazza, Massimo; Rochat, Hervé; Catterall, William A.

    2001-01-01

    β-Scorpion toxins shift the voltage dependence of activation of sodium channels to more negative membrane potentials, but only after a strong depolarizing prepulse to fully activate the channels. Their receptor site includes the S3–S4 loop at the extracellular end of the S4 voltage sensor in domain II of the α subunit. Here, we probe the role of gating charges in the IIS4 segment in β-scorpion toxin action by mutagenesis and functional analysis of the resulting mutant sodium channels. Neutralization of the positively charged amino acid residues in the IIS4 segment by mutation to glutamine shifts the voltage dependence of channel activation to more positive membrane potentials and reduces the steepness of voltage-dependent gating, which is consistent with the presumed role of these residues as gating charges. Surprisingly, neutralization of the gating charges at the outer end of the IIS4 segment by the mutations R850Q, R850C, R853Q, and R853C markedly enhances β-scorpion toxin action, whereas mutations R856Q, K859Q, and K862Q have no effect. In contrast to wild-type, the β-scorpion toxin Css IV causes a negative shift of the voltage dependence of activation of mutants R853Q and R853C without a depolarizing prepulse at holding potentials from −80 to −140 mV. Reaction of mutant R853C with 2-aminoethyl methanethiosulfonate causes a positive shift of the voltage dependence of activation and restores the requirement for a depolarizing prepulse for Css IV action. Enhancement of sodium channel activation by Css IV causes large tail currents upon repolarization, indicating slowed deactivation of the IIS4 voltage sensor by the bound toxin. Our results are consistent with a voltage-sensor–trapping model in which the β-scorpion toxin traps the IIS4 voltage sensor in its activated position as it moves outward in response to depolarization and holds it there, slowing its inward movement on deactivation and enhancing subsequent channel activation. Evidently

  3. Voltage Sensors Monitor Harmful Static

    Science.gov (United States)

    2009-01-01

    A tiny sensor, small enough to be worn on clothing, now monitors voltage changes near sensitive instruments after being created to alert Agency workers to dangerous static buildup near fuel operations and avionics. San Diego s Quasar Federal Systems received a Small Business Innovation Research (SBIR) contract from Kennedy Space Center to develop its remote voltage sensor (RVS), a dime-sized electrometer designed to measure triboelectric changes in the environment. One of the unique qualities of the RVS is that it can detect static at greater distances than previous devices, measuring voltage changes from a few centimeters to a few meters away, due to its much-improved sensitivity.

  4. Non-contact current and voltage sensor

    Science.gov (United States)

    Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

    2014-03-25

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  5. Voltage-controlled domain wall traps in ferromagnetic nanowires

    Science.gov (United States)

    Bauer, Uwe; Emori, Satoru; Beach, Geoffrey S. D.

    2013-06-01

    Electrical control of magnetism has the potential to bring about revolutionary new spintronic devices, many of which rely on efficient manipulation of magnetic domain walls in ferromagnetic nanowires. Recently, it has been shown that voltage-induced charge accumulation at a metal-oxide interface can influence domain wall motion in ultrathin metallic ferromagnets, but the effects have been relatively modest and limited to the slow, thermally activated regime. Here we show that a voltage can generate non-volatile switching of magnetic properties at the nanoscale by modulating interfacial chemistry rather than charge density. Using a solid-state ionic conductor as a gate dielectric, we generate unprecedentedly strong voltage-controlled domain wall traps that function as non-volatile, electrically programmable and switchable pinning sites. Pinning strengths of at least 650 Oe can be readily achieved, enough to bring to a standstill domain walls travelling at speeds of at least ~20 m s-1. We exploit this new magneto-ionic effect to demonstrate a prototype non-volatile memory device in which voltage-controlled domain wall traps facilitate electrical bit selection in a magnetic nanowire register.

  6. Capacitor Voltages Measurement and Balancing in Flying Capacitor Multilevel Converters Utilizing a Single Voltage Sensor

    DEFF Research Database (Denmark)

    Farivar, Glen; Ghias, Amer M. Y. M.; Hredzak, Branislav

    2017-01-01

    This paper proposes a new method for measuring capacitor voltages in multilevel flying capacitor (FC) converters that requires only one voltage sensor per phase leg. Multiple dc voltage sensors traditionally used to measure the capacitor voltages are replaced with a single voltage sensor at the ac...... side of the phase leg. The proposed method is subsequently used to balance the capacitor voltages using only the measured ac voltage. The operation of the proposed measurement and balancing method is independent of the number of the converter levels. Experimental results presented for a five-level FC...

  7. Structure and function of the voltage sensor of sodium channels probed by a beta-scorpion toxin.

    Science.gov (United States)

    Cestèle, Sandrine; Yarov-Yarovoy, Vladimir; Qu, Yusheng; Sampieri, François; Scheuer, Todd; Catterall, William A

    2006-07-28

    Voltage sensing by voltage-gated sodium channels determines the electrical excitability of cells, but the molecular mechanism is unknown. beta-Scorpion toxins bind specifically to neurotoxin receptor site 4 and induce a negative shift in the voltage dependence of activation through a voltage sensor-trapping mechanism. Kinetic analysis showed that beta-scorpion toxin binds to the resting state, and subsequently the bound toxin traps the voltage sensor in the activated state in a voltage-dependent but concentration-independent manner. The rate of voltage sensor trapping can be fit by a two-step model, in which the first step is voltage-dependent and correlates with the outward gating movement of the IIS4 segment, whereas the second step is voltage-independent and results in shifted voltage dependence of activation of the channel. Mutations of Glu(779) in extracellular loop IIS1-S2 and both Glu(837) and Leu(840) in extracellular loop IIS3-S4 reduce the binding affinity of beta-scorpion toxin. Mutations of positively charged and hydrophobic amino acid residues in the IIS4 segment do not affect beta-scorpion toxin binding but alter voltage dependence of activation and enhance beta-scorpion toxin action. Structural modeling with the Rosetta algorithm yielded a three-dimensional model of the toxin-receptor complex with the IIS4 voltage sensor at the extracellular surface. Our results provide mechanistic and structural insight into the voltage sensor-trapping mode of scorpion toxin action, define the position of the voltage sensor in the resting state of the sodium channel, and favor voltage-sensing models in which the S4 segment spans the membrane in both resting and activated states.

  8. Structure and Function of the Voltage Sensor of Sodium Channels Probed by a β-Scorpion Toxin*S

    Science.gov (United States)

    Cestèle, Sandrine; Yarov-Yarovoy, Vladimir; Qu, Yusheng; Sampieri, François; Scheuer, Todd; Catterall, William A.

    2006-01-01

    Voltage sensing by voltage-gated sodium channels determines the electrical excitability of cells, but the molecular mechanism is unknown. β-Scorpion toxins bind specifically to neurotoxin receptor site 4 and induce a negative shift in the voltage dependence of activation through a voltage sensor-trapping mechanism. Kinetic analysis showed that β-scorpion toxin binds to the resting state, and subsequently the bound toxin traps the voltage sensor in the activated state in a voltage-dependent but concentration-independent manner. The rate of voltage sensor trapping can be fit by a two-step model, in which the first step is voltage-dependent and correlates with the outward gating movement of the IIS4 segment, whereas the second step is voltage-independent and results in shifted voltage dependence of activation of the channel. Mutations of Glu779 in extracellular loop IIS1–S2 and both Glu837 and Leu840 in extracellular loop IIS3–S4 reduce the binding affinity of β-scorpion toxin. Mutations of positively charged and hydrophobic amino acid residues in the IIS4 segment do not affect β-scorpion toxin binding but alter voltage dependence of activation and enhance β-scorpion toxin action. Structural modeling with the Rosetta algorithm yielded a three-dimensional model of the toxin-receptor complex with the IIS4 voltage sensor at the extracellular surface. Our results provide mechanistic and structural insight into the voltage sensor-trapping mode of scorpion toxin action, define the position of the voltage sensor in the resting state of the sodium channel, and favor voltage-sensing models in which the S4 segment spans the membrane in both resting and activated states. PMID:16679310

  9. CONTRIBUTIONS OF INTRACELLULAR IONS TO Kv CHANNEL VOLTAGE SENSOR DYNAMICS.

    Directory of Open Access Journals (Sweden)

    Samuel eGoodchild

    2012-06-01

    Full Text Available Voltage sensing domains of Kv channels control ionic conductance through coupling of the movement of charged residues in the S4 segment to conformational changes at the cytoplasmic region of the pore domain, that allow K+ ions to flow. Conformational transitions within the voltage sensing domain caused by changes in the applied voltage across the membrane field are coupled to the conducting pore region and the gating of ionic conductance. However, several other factors not directly linked to the voltage dependent movement of charged residues within the voltage sensor impact the dynamics of the voltage sensor, such as inactivation, ionic conductance, intracellular ion identity and block of the channel by intracellular ligands. The effect of intracellular ions on voltage sensor dynamics is of importance in the interpretation of gating current measurements and the physiology of pore/voltage sensor coupling. There is a significant amount of variability in the reported kinetics of voltage sensor deactivation kinetics of Kv channels attributed to different mechanisms such as open state stabilization, immobilization and relaxation processes of the voltage sensor. Here we separate these factors and focus on the causal role that intracellular ions can play in allosterically modulating the dynamics of Kv voltage sensor deactivation kinetics. These considerations are of critical importance in understanding the molecular determinants of the complete channel gating cycle from activation to deactivation.

  10. Research and Experiments on a Unipolar Capacitive Voltage Sensor

    Directory of Open Access Journals (Sweden)

    Qiang Zhou

    2015-08-01

    Full Text Available Voltage sensors are an important part of the electric system. In service, traditional voltage sensors need to directly contact a high-voltage charged body. Sensors involve a large volume, complex insulation structures, and high design costs. Typically an iron core structure is adopted. As a result, ferromagnetic resonance can occur easily during practical application. Moreover, owing to the multilevel capacitor divider, the sensor cannot reflect the changes of measured voltage in time. Based on the electric field coupling principle, this paper designs a new voltage sensor; the unipolar structure design solves many problems of traditional voltage sensors like the great insulation design difficulty and high costs caused by grounding electrodes. A differential signal input structure is adopted for the detection circuit, which effectively restrains the influence of the common-mode interference signal. Through sensor modeling, simulation and calculations, the structural design of the sensor electrode was optimized, miniaturization of the sensor was realized, the voltage division ratio of the sensor was enhanced, and the phase difference of sensor measurement was weakened. The voltage sensor is applied to a single-phase voltage class line of 10 kV for testing. According to the test results, the designed sensor is able to meet the requirements of accurate and real-time measurement for voltage of the charged conductor as well as to provide a new method for electricity larceny prevention and on-line monitoring of the power grid in an electric system. Therefore, it can satisfy the development demands of the smart power grid.

  11. Optical voltage sensors: principle, problem and research proposal

    Science.gov (United States)

    Li, Changsheng

    2016-10-01

    Sensing principles and main problems to be solved for optical voltage sensors are briefly reviewed. Optical effects used for voltage sensing usually include electro-optic Pockels and Kerr effects, electro-gyration effect, elasto-optical effect, and electroluminescent effects, etc. In principle, typical optical voltage sensor is based on electro-optic Pockels crystals and closed-loop signal detection scheme. Main problems to be solved for optical voltage sensors include: how to remove influence of unwanted multiple optical effects on voltage sensing performance; how to select or develop a proper voltage sensing material and element; how to keep optical phase bias to be stable under temperature fluctuation and vibration; how to achieve dc voltage sensing, etc. In order to suppress the influence of unwanted optical effects and light beam coupling-related loss on voltage sensing signals, we may pay more attention to all-fiber and waveguide voltage sensors. Voltage sensors based on electroluminescent effects are also promising in some application fields due to their compact configuration, low cost and potential long-term reliability.

  12. High voltage trapping effects in GaN-based metal-insulator-semiconductor transistors

    Science.gov (United States)

    Meneghesso, Gaudenzio; Meneghini, Matteo; Silvestri, Riccardo; Vanmeerbeek, Piet; Moens, Peter; Zanoni, Enrico

    2016-01-01

    This paper presents an analysis of the high voltage trapping processes that take place in high-electron mobility transistors based on GaN, with a metal-insulator-semiconductor (MIS) structure. The study is based on combined pulsed and transient measurements, carried out with trapping voltages in the range from 50 to 500 V. The results indicate that: (i) dynamic Ron is maximum for trapping voltages between 200 and 300 V, and decreases for higher voltage levels; (ii) Ron-transient measurements reveal the presence of a dominant trap with activation energy Ea1 = 0.93 eV and of a second trap with activation energy equal to Ea2 = 0.61 eV; (iii) the deep level transient spectroscopy (DLTS) signal associated to trap Ea1 is completely suppressed for high trapping voltages (VDS = 500 V). The results are interpreted by considering that the trap Ea1 is located in the buffer, and originates from CN defects. The exposure to high drain voltages may favor the depletion of such traps, due to a field-assisted de-trapping process or to the presence of vertical leakage paths.

  13. Engineering of a Genetically Encodable Fluorescent Voltage Sensor Exploiting Fast Ci-VSP Voltage-Sensing Movements

    OpenAIRE

    Alicia Lundby; Hiroki Mutoh; Dimitar Dimitrov; Walther Akemann; Thomas Knöpfel

    2008-01-01

    Ci-VSP contains a voltage-sensing domain (VSD) homologous to that of voltage-gated potassium channels. Using charge displacement ('gating' current) measurements we show that voltage-sensing movements of this VSD can occur within 1 ms in mammalian membranes. Our analysis lead to development of a genetically encodable fluorescent protein voltage sensor (VSFP) in which the fast, voltage-dependent conformational changes of the Ci-VSP voltage sensor are transduced to similarly fast fluorescence re...

  14. Molecular basis of the interaction between gating modifier spider toxins and the voltage sensor of voltage-gated ion channels

    Science.gov (United States)

    Lau, Carus H. Y.; King, Glenn F.; Mobli, Mehdi

    2016-01-01

    Voltage-sensor domains (VSDs) are modular transmembrane domains of voltage-gated ion channels that respond to changes in membrane potential by undergoing conformational changes that are coupled to gating of the ion-conducting pore. Most spider-venom peptides function as gating modifiers by binding to the VSDs of voltage-gated channels and trapping them in a closed or open state. To understand the molecular basis underlying this mode of action, we used nuclear magnetic resonance to delineate the atomic details of the interaction between the VSD of the voltage-gated potassium channel KvAP and the spider-venom peptide VSTx1. Our data reveal that the toxin interacts with residues in an aqueous cleft formed between the extracellular S1-S2 and S3-S4 loops of the VSD whilst maintaining lipid interactions in the gaps formed between the S1-S4 and S2-S3 helices. The resulting network of interactions increases the energetic barrier to the conformational changes required for channel gating, and we propose that this is the mechanism by which gating modifier toxins inhibit voltage-gated ion channels. PMID:27677715

  15. Molecular basis of the interaction between gating modifier spider toxins and the voltage sensor of voltage-gated ion channels

    Science.gov (United States)

    Lau, Carus H. Y.; King, Glenn F.; Mobli, Mehdi

    2016-09-01

    Voltage-sensor domains (VSDs) are modular transmembrane domains of voltage-gated ion channels that respond to changes in membrane potential by undergoing conformational changes that are coupled to gating of the ion-conducting pore. Most spider-venom peptides function as gating modifiers by binding to the VSDs of voltage-gated channels and trapping them in a closed or open state. To understand the molecular basis underlying this mode of action, we used nuclear magnetic resonance to delineate the atomic details of the interaction between the VSD of the voltage-gated potassium channel KvAP and the spider-venom peptide VSTx1. Our data reveal that the toxin interacts with residues in an aqueous cleft formed between the extracellular S1-S2 and S3-S4 loops of the VSD whilst maintaining lipid interactions in the gaps formed between the S1-S4 and S2-S3 helices. The resulting network of interactions increases the energetic barrier to the conformational changes required for channel gating, and we propose that this is the mechanism by which gating modifier toxins inhibit voltage-gated ion channels.

  16. A torsional sensor for MEMS-based RMS voltage measurements

    Directory of Open Access Journals (Sweden)

    J. Dittmer

    2008-05-01

    Full Text Available RF voltage measurement based on electrostatic RMS voltage-to-force conversion is an alternative method in comparison to the conventional thermal power dissipation method. It is based on a mechanical force induced by an RF voltage applied to a micro-mechanical system. For a theoretically adequate resolution and high precision measurements, the necessary geometrical dimensions of the sensor require the application of micro machining. In this contribution, the dependence between electrical and geometrical properties of different sensor designs is investigated. Based on these results, problems related to practical micro-machining and solutions with respect to possible sensor realizations are discussed. The evolution of different sensor generations is shown.

  17. Tunable sensor response by voltage-control in biomimetic hair flow sensors

    NARCIS (Netherlands)

    Droogendijk, H.; Krijnen, G.J.M.

    2012-01-01

    We report improvements in detection limit and responsivity of biomimetic hair flow sensors by electrostatic spring-softening (ESS). Applying a DC-bias voltage to our capacitive flow sensors mediates large (80% and more) voltage-controlled electromechanical amplification of the flow signal for freque

  18. Tunable sensor response by voltage-control in biomimetic hair flow sensors

    NARCIS (Netherlands)

    Droogendijk, H.; Krijnen, G.J.M.

    2012-01-01

    We report improvements in detection limit and responsivity of biomimetic hair flow sensors by electrostatic spring-softening (ESS). Applying a DC-bias voltage to our capacitive flow sensors mediates large (80% and more) voltage-controlled electro-mechanical amplification of the flow signal for frequ

  19. Time varying voltage combustion control and diagnostics sensor

    Science.gov (United States)

    Chorpening, Benjamin T.; Thornton, Jimmy D.; Huckaby, E. David; Fincham, William

    2011-04-19

    A time-varying voltage is applied to an electrode, or a pair of electrodes, of a sensor installed in a fuel nozzle disposed adjacent the combustion zone of a continuous combustion system, such as of the gas turbine engine type. The time-varying voltage induces a time-varying current in the flame which is measured and used to determine flame capacitance using AC electrical circuit analysis. Flame capacitance is used to accurately determine the position of the flame from the sensor and the fuel/air ratio. The fuel and/or air flow rate (s) is/are then adjusted to provide reduced flame instability problems such as flashback, combustion dynamics and lean blowout, as well as reduced emissions. The time-varying voltage may be an alternating voltage and the time-varying current may be an alternating current.

  20. A fiber optic hybrid multifunctional AC voltage sensor

    Energy Technology Data Exchange (ETDEWEB)

    Sokolovsky, A.; Zadvornov, S. [IRE, Moscow (Russian Federation); Ryabko, M. [UFD, Moscow (Russian Federation)

    2008-07-01

    Hybrid sensors have the advantages of both electronic and optical technologies. Their sensing element is based on conventional transducers and the optical fiber is used as a transmission media for the optical signal encoded with information between the local module and the remote module. The power supply for the remote module is usually provided by a built-in photoelectric converter illuminated by the optical radiation going through the same or another optical fiber. Electro-optic hybrid sensors have been widely used because of the electrical isolation provided by optical fiber. In the conventional fiber optic voltage sensor, piezoelectric or electro-optic transducers are implemented. Processing and conditioning measurement information is a complex task in these sensors. Moreover, the considerable drawback of most of these systems is that only one parameter, usually voltage value, is measured. This paper presented a novel fiber optic hybrid sensor for alternating current voltage measurements. This instrument provides the simultaneous measurement of four parameters, notably voltage value, frequency, phase angle and the external temperature. The paper described the measurement technology of the instrument including the remote module and optical powering as well as the unique modulation algorithm. The results and conclusions were also presented. 7 refs., 4 figs.

  1. Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2012-01-01

    We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

  2. Camera traps as sensor networks for monitoring animal communities

    NARCIS (Netherlands)

    Kays, R.W.; Kranstauber, B.; Jansen, P.A.; Carbone, C.; Rowcliffe, M.; Fountain, T.; Tilak, S.

    2009-01-01

    Studying animal movement and distribution is of critical importance to addressing environmental challenges including invasive species, infectious diseases, climate and land-use change. Motion sensitive camera traps offer a visual sensor to record the presence of a species at a location, recording th

  3. Camera Traps as Sensor Networks for Monitoring Animal Communities

    NARCIS (Netherlands)

    Kays, R.W.; Tilak, S.; Kranstauber, B.; Jansen, P.A.; Carbone, C.; Rowcliff, M.J.; Fountain, T.; Eggert, J.; He, Z.

    2011-01-01

    Studying animal movement and distribution is of critical importance to addressing environmental challenges including invasive species, infectious diseases, climate and land-use change. Motion sensitive camera traps offer a visual sensor to record the presence of a broad range of species providing lo

  4. Camera traps as sensor networks for monitoring animal communities

    NARCIS (Netherlands)

    Kays, R.W.; Kranstauber, B.; Jansen, P.A.; Carbone, C.; Rowcliffe, M.; Fountain, T.; Tilak, S.

    2009-01-01

    Studying animal movement and distribution is of critical importance to addressing environmental challenges including invasive species, infectious diseases, climate and land-use change. Motion sensitive camera traps offer a visual sensor to record the presence of a species at a location, recording th

  5. On the application of radio frequency voltages to ion traps via helical resonators

    CERN Document Server

    Siverns, J D; Weidt, S; Hensinger, W K

    2011-01-01

    Ions confined using a Paul trap require a stable, high voltage and low noise radio frequency (RF) potential. We present a guide for the design and construction of a helical coil resonator for a desired frequency that maximises the quality factor for a set of experimental constraints. We provide an in-depth analysis of the system formed from a shielded helical coil and an ion trap by treating the system as a lumped element model. This allows us to predict the resonant frequency and quality factor in terms of the physical parameters of the resonator and the properties of the ion trap. We also compare theoretical predictions with experimental data for different resonators, and predict the voltage applied to the ion trap as a function of the Q-factor, input power and the properties of the resonant circuit.

  6. Engineering of a genetically encodable fluorescent voltage sensor exploiting fast Ci-VSP voltage-sensing movements

    DEFF Research Database (Denmark)

    Lundby, Alicia; Mutoh, Hiroki; Dimitrov, Dimitar

    2008-01-01

    Ci-VSP contains a voltage-sensing domain (VSD) homologous to that of voltage-gated potassium channels. Using charge displacement ('gating' current) measurements we show that voltage-sensing movements of this VSD can occur within 1 ms in mammalian membranes. Our analysis lead to development of a g...... of a genetically encodable fluorescent protein voltage sensor (VSFP) in which the fast, voltage-dependent conformational changes of the Ci-VSP voltage sensor are transduced to similarly fast fluorescence read-outs....

  7. A Novel Voltage Sensor in the Orthosteric Binding Site of the M2 Muscarinic Receptor.

    Science.gov (United States)

    Barchad-Avitzur, Ofra; Priest, Michael F; Dekel, Noa; Bezanilla, Francisco; Parnas, Hanna; Ben-Chaim, Yair

    2016-10-04

    G protein-coupled receptors (GPCRs) mediate many signal transduction processes in the body. The discovery that these receptors are voltage-sensitive has changed our understanding of their behavior. The M2 muscarinic acetylcholine receptor (M2R) was found to exhibit depolarization-induced charge movement-associated currents, implying that this prototypical GPCR possesses a voltage sensor. However, the typical domain that serves as a voltage sensor in voltage-gated channels is not present in GPCRs, making the search for the voltage sensor in the latter challenging. Here, we examine the M2R and describe a voltage sensor that is comprised of tyrosine residues. This voltage sensor is crucial for the voltage dependence of agonist binding to the receptor. The tyrosine-based voltage sensor discovered here constitutes a noncanonical by which membrane proteins may sense voltage.

  8. MOS Capacitance-Voltage Characteristics Ⅲ.Trapping Capacitance from 2-Charge-State Impurities

    Institute of Scientific and Technical Information of China (English)

    Jie Binbin; Sah Chihtang

    2011-01-01

    Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier,or one-energy-level impurity species.Models described include a donor electron trap and an acceptor hole trap,both donors,both acceptors,both shallow energy levels,both deep,one shallow and one deep,and the identical donor and acceptor.Device and material parameters are selected to simulate chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.

  9. MOS Capacitance-Voltage Characteristics:V.Methods to Enhance the Trapping Capacitance

    Institute of Scientific and Technical Information of China (English)

    揭斌斌; 薩支唐

    2012-01-01

    Low-frequency and High-frequency Capacitance-Voltage (C-V) curves of Silicon Metal-Oxide-Semiconductor Capacitors,showing electron and hole trapping at shallow-level dopant and deep-level generationrecombination-trapping impurities,are presented to illustrate the enhancement of the giant trapping capacitances by physical means via device and circuit designs,in contrast to chemical means via impurity characteristics previously reported.Enhancement is realized by masking the electron or/and hole storage capacitances to make the trapping capacitances dominant at the terminals.Device and materials properties used in the computed CV curves are selected to illustrate experimental realizations for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.

  10. Arrangement and mobility of the voltage sensor domain in prokaryotic voltage-gated sodium channels.

    Science.gov (United States)

    Shimomura, Takushi; Irie, Katsumasa; Nagura, Hitoshi; Imai, Tomoya; Fujiyoshi, Yoshinori

    2011-03-04

    Prokaryotic voltage-gated sodium channels (Na(V)s) form homotetramers with each subunit contributing six transmembrane α-helices (S1-S6). Helices S5 and S6 form the ion-conducting pore, and helices S1-S4 function as the voltage sensor with helix S4 thought to be the essential element for voltage-dependent activation. Although the crystal structures have provided insight into voltage-gated K channels (K(V)s), revealing a characteristic domain arrangement in which the voltage sensor domain of one subunit is close to the pore domain of an adjacent subunit in the tetramer, the structural and functional information on Na(V)s remains limited. Here, we show that the domain arrangement in NaChBac, a firstly cloned prokaryotic Na(V), is similar to that in K(V)s. Cysteine substitutions of three residues in helix S4, Q107C, T110C, and R113C, effectively induced intersubunit disulfide bond formation with a cysteine introduced in helix S5, M164C, of the adjacent subunit. In addition, substituting two acidic residues with lysine, E43K and D60K, shifted the activation of the channel to more positive membrane potentials and consistently shifted the preferentially formed disulfide bond from T110C/M164C to Q107C/M164C. Because Gln-107 is located closer to the extracellular side of helix S4 than Thr-110, this finding suggests that the functional shift in the voltage dependence of activation is related to a restriction of the position of helix S4 in the lipid bilayer. The domain arrangement and vertical mobility of helix S4 in NaChBac indicate that the structure and the mechanism of voltage-dependent activation in prokaryotic Na(V)s are similar to those in canonical K(V)s.

  11. Determination of the aging offset voltage of AMR sensors based on accelerated degradation test

    NARCIS (Netherlands)

    Zambrano, Andreina; Kerkhoff, Hans G.

    2015-01-01

    Usually Anisotropic Magnetoresistance angle sensors are configured with two Wheatstone bridges, but an undesirable offset voltage included in the sensor output affects its accuracy. The total offset voltage combines a voltage due to resistance mismatches during manufacturing and a voltage from inequ

  12. Ozone Sensor for Application in Medium Voltage Switchboard

    Directory of Open Access Journals (Sweden)

    Letizia De Maria

    2009-01-01

    Full Text Available The application of a new spectroscopic type fiber sensor for ozone detection in electrical components of Medium Voltage (MV network is evaluated. The sensor layout is based on the use of an optical retroreflector, to improve the detection sensitivity, and it was especially designed for detecting in situ rapid changes of ozone concentration. Preliminary tests were performed in a typical MV switchboard. Artificial defects simulated predischarge phenomena arising during real operating conditions. Results are discussed by a comparison with data simultaneously acquired with a standard partial discharge system.

  13. Low Power/Low Voltage Interface Circuitry for Capacitive Sensors

    DEFF Research Database (Denmark)

    Furst, Claus Efdmann

    This thesis focuses mainly on low power/low voltage interface circuits, implemented in CMOS, for capacitive sensors. A brief discussion of demands and possibilities for analog signal processing in the future is presented. Techniques for low power design is presented. This is done by analyzing power...... consumption of different amplifier topologies. Next, low power features of different amplifier types are analyzed on transistor level. A brief comparison of SI circuits for low power applications vs. SC circuits is presented. Methodologies for low voltage design is presented. This is followed by a collection...... power consumption. It is shown that the Sigma-Delta modulator is advantageous when embedded in a feedback loop with a mechanical sensor. Here a micro mechanical capacitive microphone. Feedback and detection circuitry for a capacitive microphone is presented. Practical implementations of low power...

  14. A vesicle-trafficking protein commandeers Kv channel voltage sensors for voltage-dependent secretion.

    Science.gov (United States)

    Grefen, Christopher; Karnik, Rucha; Larson, Emily; Lefoulon, Cécile; Wang, Yizhou; Waghmare, Sakharam; Zhang, Ben; Hills, Adrian; Blatt, Michael R

    2015-01-01

    Growth in plants depends on ion transport for osmotic solute uptake and secretory membrane trafficking to deliver material for wall remodelling and cell expansion. The coordination of these processes lies at the heart of the question, unresolved for more than a century, of how plants regulate cell volume and turgor. Here we report that the SNARE protein SYP121 (SYR1/PEN1), which mediates vesicle fusion at the Arabidopsis plasma membrane, binds the voltage sensor domains (VSDs) of K(+) channels to confer a voltage dependence on secretory traffic in parallel with K(+) uptake. VSD binding enhances secretion in vivo subject to voltage, and mutations affecting VSD conformation alter binding and secretion in parallel with channel gating, net K(+) concentration, osmotic content and growth. These results demonstrate a new and unexpected mechanism for secretory control, in which a subset of plant SNAREs commandeer K(+) channel VSDs to coordinate membrane trafficking with K(+) uptake for growth.

  15. Design and Simulation Test of an Open D-Dot Voltage Sensor

    Directory of Open Access Journals (Sweden)

    Yunjie Bai

    2015-09-01

    Full Text Available Nowadays, sensor development focuses on miniaturization and non-contact measurement. According to the D-dot principle, a D-dot voltage sensor with a new structure was designed based on the differential D-dot sensor with a symmetrical structure, called an asymmetric open D-dot voltage sensor. It is easier to install. The electric field distribution of the sensor was analyzed through Ansoft Maxwell and an open D-dot voltage sensor was designed. This open D-voltage sensor is characteristic of accessible insulating strength and small electric field distortion. The steady and transient performance test under 10 kV-voltage reported satisfying performances of the designed open D-dot voltage sensor. It conforms to requirements for a smart grid measuring sensor in intelligence, miniaturization and facilitation.

  16. A novel voltage output integrated circuit temperature sensor

    Institute of Scientific and Technical Information of China (English)

    吴晓波; 方志刚; 等

    2002-01-01

    The novel integrated circuit(IC) temperature sensor presented in this paper works similarly as a two-terminal Zener,has breakdown voltage directly proportional to Kelvin temperature at 10mV/℃,with typical error of less tha ±1.0℃ over a temperature range from-50℃to +120℃ .In addition to all the features that conventional IC temperature sensors have,the new device also has very low static power dissipation(0.5mW),low output impedance(less than 1Ω),execllent stability,high reproducibility,and high precision.The sensor's circuit design and layout are discussed in detail.Applications of the sensor include almost and type of temperature sensing over the range of -50℃-+125℃。The low impedance and linear output of the device make interfacing the readout or control circuitry especially easy.Due to the excellent performance and low cost of this sensor.more application of the sensor over wide temperature range are expected.

  17. A novel voltage output integrated circuit temperature sensor

    Institute of Scientific and Technical Information of China (English)

    吴晓波; 赵梦恋; 严晓浪; 方志刚

    2002-01-01

    The novel integrated circuit (IC) temperature sensor presented in this paper works similarly as a two-terminal Zener, has breakdown voltage directly proportional to Kelvin temperature at 10 mV/℃, with typical error of less than ±1.0℃ over a temperature range from -50℃ to +125℃. In addition to all the features that conventional IC temperature sensors have, the new device also has very low static power dissipation ( 0.5 mW ) , low output impedance ( less than 1Ω), excellent stability, high reproducibility, and high precision. The sensor's circuit design and layout are discussed in detail. Applications of the sensor include almost any type of temperature sensing over the range of -50℃-+125℃. The low impedance and linear output of the device make interfacing the readout or control circuitry especially easy. Due to the excellent performance and low cost of this sensor, more applications of the sensor over wide temperature range are expected.

  18. Voltage-sensor mutations in channelopathies of skeletal muscle

    Science.gov (United States)

    Cannon, Stephen C

    2010-01-01

    Mutations of voltage-gated ion channels cause several channelopathies of skeletal muscle, which present clinically with myotonia, periodic paralysis, or a combination of both. Expression studies have revealed both loss-of-function and gain-of-function defects for the currents passed by mutant channels. In many cases, these functional changes could be mechanistically linked to the defects of fibre excitability underlying myotonia or periodic paralysis. One remaining enigma was the basis for depolarization-induced weakness in hypokalaemic periodic paralysis (HypoPP) arising from mutations in either sodium or calcium channels. Curiously, 14 of 15 HypoPP mutations are at arginines in S4 voltage sensors, and recent observations show that these substitutions support an alternative pathway for ion conduction, the gating pore, that may be the source of the aberrant depolarization during an attack of paralysis. PMID:20156847

  19. An automatic method to analyze the Capacity-Voltage and Current-Voltage curves of a sensor

    CERN Document Server

    Matorras Cuevas, Pablo

    2017-01-01

    An automatic method to perform Capacity versus voltage analysis for all kind of silicon sensor is provided. It successfully calculates the depletion voltage to unirradiated and irradiated sensors, and with measurements with outliers or reaching breakdown. It is built using C++ and using ROOT trees with an analogous skeleton as TRICS, where the data as well as the results of the ts are saved, to make further analysis.

  20. Analysis and Improvement of Reflection-type Transverse Modulation Optical Voltage Sensors

    Institute of Scientific and Technical Information of China (English)

    LUO Sunan; YE Miaoyuan; XU Yan; CUI Ying

    2001-01-01

    Reflection-type transverse modulation optical voltage sensors, which employ reflection retarders to replace quarter-wave plates, are convenient for practical use. In previous literatures, the measured voltage was all applied to Bi4Ge3O12 crystal along the (110) direction for transverse modulation optical voltage sensor, and crystals are used as sensing materials. In this paper, reflection-type transverse modulation optical voltage sensor has been analyzed theoretically and a novel configuration in which the measured voltage is applied to a Bi4C-e3O12 crystal along the (001) direction with light wave passing through the crystal in the (110) direction has been proposed. According to this theoretical analysis, a novel optical voltage sensor, which can be used in a 220 kV optical fiber voltage transformer, has been designed and assembled. Experimental results showed that the linearity and the stability of the sensor during 24 hours can reach 0.3%.

  1. Trapped Ion Oscillation Frequencies as Sensors for Spectroscopy

    Directory of Open Access Journals (Sweden)

    Wilfried Nörtershäuser

    2010-03-01

    Full Text Available The oscillation frequencies of charged particles in a Penning trap can serve as sensors for spectroscopy when additional field components are introduced to the magnetic and electric fields used for confinement. The presence of so-called “magnetic bottles” and specific electric anharmonicities creates calculable energy-dependences of the oscillation frequencies in the radiofrequency domain which may be used to detect the absorption or emission of photons both in the microwave and optical frequency domains. The precise electronic measurement of these oscillation frequencies therefore represents an optical sensor for spectroscopy. We discuss possible applications for precision laser and microwave spectroscopy and their role in the determination of magnetic moments and excited state lifetimes. Also, the trap-assisted measurement of radiative nuclear de-excitations in the X-ray domain is discussed. This way, the different applications range over more than 12 orders of magnitude in the detectable photon energies, from below μeV in the microwave domain to beyond MeV in the X-ray domain.

  2. Deletion of cytosolic gating ring decreases gate and voltage sensor coupling in BK channels.

    Science.gov (United States)

    Zhang, Guohui; Geng, Yanyan; Jin, Yakang; Shi, Jingyi; McFarland, Kelli; Magleby, Karl L; Salkoff, Lawrence; Cui, Jianmin

    2017-03-06

    Large conductance Ca(2+)-activated K(+) channels (BK channels) gate open in response to both membrane voltage and intracellular Ca(2+) The channel is formed by a central pore-gate domain (PGD), which spans the membrane, plus transmembrane voltage sensors and a cytoplasmic gating ring that acts as a Ca(2+) sensor. How these voltage and Ca(2+) sensors influence the common activation gate, and interact with each other, is unclear. A previous study showed that a BK channel core lacking the entire cytoplasmic gating ring (Core-MT) was devoid of Ca(2+) activation but retained voltage sensitivity (Budelli et al. 2013. Proc. Natl. Acad. Sci. USA http://dx.doi.org/10.1073/pnas.1313433110). In this study, we measure voltage sensor activation and pore opening in this Core-MT channel over a wide range of voltages. We record gating currents and find that voltage sensor activation in this truncated channel is similar to WT but that the coupling between voltage sensor activation and gating of the pore is reduced. These results suggest that the gating ring, in addition to being the Ca(2+) sensor, enhances the effective coupling between voltage sensors and the PGD. We also find that removal of the gating ring alters modulation of the channels by the BK channel's β1 and β2 subunits.

  3. Voltage-dependent K channels in protoplasts of trap-lobe cells of Dionaea muscipula.

    Science.gov (United States)

    Iijima, T; Hagiwara, S

    1987-01-01

    The outward rectification of the K+ current in mesophyll cell protoplasts from trap-lobes of Dionaea muscipula was studied with the patch-clamp technique. The rectification had instantaneous and time-dependent components. Changes in [K+]i strongly affected the conductance voltage relation of the plasma membrane while changes in [K+]o had little effect on the relation. Thus, the outward rectification depends on the membrane voltage and the concentration of intracellular K+. Corresponding single-channel activities were observed both in the intact membrane (cell-attached recording) and in excised patches. The single-channel conductance was about 3.3 pS with symmetrical solutions containing 30 mM K+.

  4. Contributions of counter-charge in a potassium channel voltage-sensor domain

    DEFF Research Database (Denmark)

    Pless, Stephan Alexander; Galpin, Jason D; Niciforovic, Ana P

    2011-01-01

    Voltage-sensor domains couple membrane potential to conformational changes in voltage-gated ion channels and phosphatases. Highly coevolved acidic and aromatic side chains assist the transfer of cationic side chains across the transmembrane electric field during voltage sensing. We investigated...

  5. Non-contact current and voltage sensor having detachable housing incorporating multiple ferrite cylinder portions

    Science.gov (United States)

    Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C.; Schappert, Michael A.

    2016-04-26

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing formed from two portions that mechanically close around the wire and that contain the current and voltage sensors. The current sensor is a ferrite cylinder formed from at least three portions that form the cylinder when the sensor is closed around the wire with a hall effect sensor disposed in a gap between two of the ferrite portions along the circumference to measure current. A capacitive plate or wire is disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  6. MOS Capacitance-Voltage Characteristics Ⅱ.Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations

    Institute of Scientific and Technical Information of China (English)

    Jie Binbin; Sah Chihtang

    2011-01-01

    Low-frequency and high-frequency Capacitance-Voltage(C V)curves of Metal OxideSemiconductor Capacitors(MOSC),including electron and hole trapping at the dopant donor and acceptor impurities,are presented to illustrate giant trapping capacitances,from > 0.01Cox to > 10Cox.Five device and materials parameters are varied for fundamental trapping parameter characterization,and electrical and optical signal processing applications.Parameters include spatially constant concentration of the dopant-donor-impurity electron trap,NDD,the ground state electron trapping energy level depth measured from the conduction band edge,EC-ED,the degeneracy of the trapped electron at the ground state,gD,the device temperature,T,and the gate oxide thickness,xox.

  7. Proton currents constrain structural models of voltage sensor activation

    Science.gov (United States)

    Randolph, Aaron L; Mokrab, Younes; Bennett, Ashley L; Sansom, Mark SP; Ramsey, Ian Scott

    2016-01-01

    The Hv1 proton channel is evidently unique among voltage sensor domain proteins in mediating an intrinsic ‘aqueous’ H+ conductance (GAQ). Mutation of a highly conserved ‘gating charge’ residue in the S4 helix (R1H) confers a resting-state H+ ‘shuttle’ conductance (GSH) in VGCs and Ci VSP, and we now report that R1H is sufficient to reconstitute GSH in Hv1 without abrogating GAQ. Second-site mutations in S3 (D185A/H) and S4 (N4R) experimentally separate GSH and GAQ gating, which report thermodynamically distinct initial and final steps, respectively, in the Hv1 activation pathway. The effects of Hv1 mutations on GSH and GAQ are used to constrain the positions of key side chains in resting- and activated-state VS model structures, providing new insights into the structural basis of VS activation and H+ transfer mechanisms in Hv1. DOI: http://dx.doi.org/10.7554/eLife.18017.001 PMID:27572256

  8. Study and Experiment on Non-Contact Voltage Sensor Suitable for Three-Phase Transmission Line.

    Science.gov (United States)

    Zhou, Qiang; He, Wei; Xiao, Dongping; Li, Songnong; Zhou, Kongjun

    2015-12-30

    A voltage transformer, as voltage signal detection equipment, plays an important role in a power system. Presently, more and more electric power systems are adopting potential transformer and capacitance voltage transformers. Transformers are often large in volume and heavyweight, their insulation design is difficult, and an iron core or multi-grade capacitance voltage division structure is generally adopted. As a result, the detection accuracy of transformer is reduced, a huge phase difference exists between detection signal and voltage signal to be measured, and the detection signal cannot accurately and timely reflect the change of conductor voltage signal to be measured. By aiming at the current problems of electric transformation, based on electrostatic induction principle, this paper designed a non-contact voltage sensor and gained detection signal of the sensor through electrostatic coupling for the electric field generated by electric charges of the conductor to be measured. The insulation structure design of the sensor is simple and its volume is small; phase difference of sensor measurement is effectively reduced through optimization design of the electrode; and voltage division ratio and measurement accuracy are increased. The voltage sensor was tested on the experimental platform of simulating three-phase transmission line. According to the result, the designed non-contact voltage sensor can realize accurate and real-time measurement for the conductor voltage. It can be applied to online monitoring for the voltage of three-phase transmission line or three-phase distribution network line, which is in accordance with the development direction of the smart grid.

  9. Study and Experiment on Non-Contact Voltage Sensor Suitable for Three-Phase Transmission Line

    Directory of Open Access Journals (Sweden)

    Qiang Zhou

    2015-12-01

    Full Text Available A voltage transformer, as voltage signal detection equipment, plays an important role in a power system. Presently, more and more electric power systems are adopting potential transformer and capacitance voltage transformers. Transformers are often large in volume and heavyweight, their insulation design is difficult, and an iron core or multi-grade capacitance voltage division structure is generally adopted. As a result, the detection accuracy of transformer is reduced, a huge phase difference exists between detection signal and voltage signal to be measured, and the detection signal cannot accurately and timely reflect the change of conductor voltage signal to be measured. By aiming at the current problems of electric transformation, based on electrostatic induction principle, this paper designed a non-contact voltage sensor and gained detection signal of the sensor through electrostatic coupling for the electric field generated by electric charges of the conductor to be measured. The insulation structure design of the sensor is simple and its volume is small; phase difference of sensor measurement is effectively reduced through optimization design of the electrode; and voltage division ratio and measurement accuracy are increased. The voltage sensor was tested on the experimental platform of simulating three-phase transmission line. According to the result, the designed non-contact voltage sensor can realize accurate and real-time measurement for the conductor voltage. It can be applied to online monitoring for the voltage of three-phase transmission line or three-phase distribution network line, which is in accordance with the development direction of the smart grid.

  10. A membrane-access mechanism of ion channel inhibition by voltage sensor toxins from spider venom

    Science.gov (United States)

    Lee, Seok-Yong; MacKinnon, Roderick

    2004-07-01

    Venomous animals produce small protein toxins that inhibit ion channels with high affinity. In several well-studied cases the inhibitory proteins are water-soluble and bind at a channel's aqueous-exposed extracellular surface. Here we show that a voltage-sensor toxin (VSTX1) from the Chilean Rose Tarantula (Grammostola spatulata) reaches its target by partitioning into the lipid membrane. Lipid membrane partitioning serves two purposes: to localize the toxin in the membrane where the voltage sensor resides and to exploit the free energy of partitioning to achieve apparent high-affinity inhibition. VSTX1, small hydrophobic poisons and anaesthetic molecules reveal a common theme of voltage sensor inhibition through lipid membrane access. The apparent requirement for such access is consistent with the recent proposal that the sensor in voltage-dependent K+ channels is located at the membrane-protein interface.

  11. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

    CERN Document Server

    Benoit, M; de Mendizabal, J. Bilbao; Chen, H; Chen, K; Di Bello, F.A; Ferrere, D; Golling, T; Gonzalez-Sevilla, S; Iacobucci, G; Lanni, F; Liu, H; Meng, L; Miucci, A; Muenstermann, D; Nessi, M; Peric, I; Rimoldi, M; Ristic, B; Pinto, M. Vicente Barrero; Vossebeld, J; Weber, M; Wu, W; Xu, L

    2016-01-01

    Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

  12. Active damping of LLCL-filter resonance based on LC-trap voltage and capacitor current feedback

    DEFF Research Database (Denmark)

    Huang, Min; Wang, Xiongfei; Loh, Poh Chiang

    2015-01-01

    . In this paper, different feedback coefficients like the proportional, derivative, integral, high pass and low pass feedback coefficients of the filter capacitor current and the LC-trap circuit voltage are investigated for damping the filter resonance. Active damping methods are analyzed by using the concept...

  13. Modeling of a Silicon Nanowire pH Sensor with Nanoscale Side Gate Voltage

    Institute of Scientific and Technical Information of China (English)

    Alireza Kargar

    2009-01-01

    A silicon nanowire (Si-NW) sensor for pH detection is presented.The conductance of the device is analytically obtained,demonstrating that the conductance increases with decreasing oxide thickness.To calculate the electrical conductance of the sensor,the diffusion-drift model and nonlinear Poisson-Boltzmann equation are applied.To improve the conductance and sensitivity,a Si-NW sensor with nanoscale side gate voltage is offered and its characteristics are theoretically achieved.It is revealed that the conductance and sensor sensitivity can be enhanced by adding appropriate side gate voltages.This effect is compared to a similar fabricated structure in the literature,which has a wire with a rectangular cross section.Finally,the effect of NW length on sensor performance is investigated and an inverse relation between sensor sensitivity and NW length is achieved.

  14. Independent movement of the voltage sensors in KV2.1/KV6.4 heterotetramers.

    Science.gov (United States)

    Bocksteins, Elke; Snyders, Dirk J; Holmgren, Miguel

    2017-01-31

    Heterotetramer voltage-gated K(+) (KV) channels KV2.1/KV6.4 display a gating charge-voltage (QV) distribution composed by two separate components. We use state dependent chemical accessibility to cysteines substituted in either KV2.1 or KV6.4 to assess the voltage sensor movements of each subunit. By comparing the voltage dependences of chemical modification and gating charge displacement, here we show that each gating charge component corresponds to a specific subunit forming the heterotetramer. The voltage sensors from KV6.4 subunits move at more negative potentials than the voltage sensors belonging to KV2.1 subunits. These results indicate that the voltage sensors from the tetrameric channels move independently. In addition, our data shows that 75% of the total charge is attributed to KV2.1, while 25% to KV6.4. Thus, the most parsimonious model for KV2.1/KV6.4 channels' stoichiometry is 3:1.

  15. Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my [Centre of Innovative Nanostructures and Nanodevices, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750 Tronoh, Perak (Malaysia)

    2014-03-24

    Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

  16. Controllable Threshold Voltage in Organic Complementary Logic Circuits with an Electron-Trapping Polymer and Photoactive Gate Dielectric Layer.

    Science.gov (United States)

    Dao, Toan Thanh; Sakai, Heisuke; Nguyen, Hai Thanh; Ohkubo, Kei; Fukuzumi, Shunichi; Murata, Hideyuki

    2016-07-20

    We present controllable and reliable complementary organic transistor circuits on a PET substrate using a photoactive dielectric layer of 6-[4'-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) doped into poly(methyl methacrylate) (PMMA) and an electron-trapping layer of poly(perfluoroalkenyl vinyl ether) (Cytop). Cu was used for a source/drain electrode in both the p-channel and n-channel transistors. The threshold voltage of the transistors and the inverting voltage of the circuits were reversibly controlled over a wide range under a program voltage of less than 10 V and under UV light irradiation. At a program voltage of -2 V, the inverting voltage of the circuits was tuned to be at nearly half of the supply voltage of the circuit. Consequently, an excellent balance between the high and low noise margins (NM) was produced (64% of NMH and 68% of NML), resulting in maximum noise immunity. Furthermore, the programmed circuits showed high stability, such as a retention time of over 10(5) s for the inverter switching voltage. Our findings bring about a flexible, simple way to obtain robust, high-performance organic circuits using a controllable complementary transistor inverter.

  17. Optical fiber sensor of partial discharges in High Voltage DC experiments

    Science.gov (United States)

    Búa-Núñez, I.; Azcárraga-Ramos, C. G.; Posada-Román, J. E.; Garcia-Souto, J. A.

    2014-05-01

    A setup simulating High Voltage DC (HVDC) transformers barriers was developed to demonstrate the effectiveness of an optical fiber (OF) sensor in detecting partial discharges (PD) under these peculiar conditions. Different PD detection techniques were compared: electrical methods, and acoustic methods. Standard piezoelectric sensors (R15i-AST) and the above mentioned OF sensors were used for acoustic detection. The OF sensor was able to detect PD acoustically with a sensitivity better than the other detection methods. The multichannel instrumentation system was tested in real HVDC conditions with the aim of analyzing the behavior of the insulation (mineral oil/pressboard).

  18. High Voltage Coil Current Sensor for DC-DC Converters Employing DDCC

    Directory of Open Access Journals (Sweden)

    M. Drinovsky

    2015-12-01

    Full Text Available Current sensor is an integral part of every switching converter. It is used for over-current protection, regulation and in case of multiphase converters for balancing. A new high voltage current sensor for coil-based current sensing in DC-DC converters is presented. The sensor employs DDCC with high voltage input stage and gain trimming. The circuit has been simulated and implemented in 0.35 um BCD technology as part of a multiphase DC-DC converter where its function has been verified. The circuit is able to sustain common mode voltage on the input up to 40 V, it occupies 0.387*0.345 mm2 and consumes 3.2 mW typically.

  19. ZnO/NiO diode-based charge-trapping layer for flash memory featuring low-voltage operation.

    Science.gov (United States)

    Sun, Chergn-En; Chen, Chin-Yu; Chu, Ka-Lip; Shen, Yung-Shao; Lin, Chia-Chun; Wu, Yung-Hsien

    2015-04-01

    A stacked oxide semiconductor of n-type ZnO/p-type NiO with diode behavior was proposed as the novel charge-trapping layer to enable low-voltage flash memory for green electronics. The memory performance outperforms that of other devices with high κ and a nanocrystal-based charge-trapping layer in terms of a large hysteresis memory window of 2.02 V with ±3 V program/erase voltage, a high operation speed of 1.88 V threshold voltage shift by erasing at -4 V for 1 ms, negligible memory window degradation up to 10(5) operation cycles, and 16.2% charge loss after 10 years of operation at 85 °C. The promising electrical characteristics can be explained by the negative conduction band offset with respect to Si of ZnO that is beneficial to electron injection and storage, the large number of trapping sites of NiO that act as other good storage media, and most importantly the built-in electric field between n-type ZnO and p-type NiO that provides a favorable electric field for program and erase operation. The process of diode-based flash memory is fully compatible with incumbent VLSI technology, and utilization of the built-in electric field ushers in a new avenue of accomplishing green flash memory.

  20. Modeling and discussion of threshold voltage for a multi-floating gate FET pH sensor

    Institute of Scientific and Technical Information of China (English)

    Shi Zhaoxia; Zhu Dazhong

    2009-01-01

    Research into new pH sensors fabricated by the standard CMOS process is currently a hot topic. The new pH sensing multi-floating gate field effect transistor is found to have a very large threshold voltage, which is different from the normal ion-sensitive field effect transistor. After analyzing all the interface layers of the structure, a new sensitive model based on the Gauss theorem and the charge neutrality principle is created in this paper. According to the model, the charge trapped on the multi-floating gate during the process and the thickness of the sensitive layer are the main causes of the large threshold voltage. From this model, it is also found that removing the charge on the multi-floating gate is an effective way to decrease the threshold voltage. The test results for three different standard pH buffer solutions show the correctness of the model and point the way to solve the large threshold problem.

  1. Molecular Action of Lidocaine on the Voltage Sensors of Sodium Channels

    OpenAIRE

    Sheets, Michael F.; Hanck, Dorothy A

    2003-01-01

    Block of sodium ionic current by lidocaine is associated with alteration of the gating charge-voltage (Q-V) relationship characterized by a 38% reduction in maximal gating charge (Qmax) and by the appearance of additional gating charge at negative test potentials. We investigated the molecular basis of the lidocaine-induced reduction in cardiac Na channel–gating charge by sequentially neutralizing basic residues in each of the voltage sensors (S4 segments) in the four domains of the human hea...

  2. KCNE1 divides the voltage sensor movement in KCNQ1/KCNE1 channels into two steps

    Science.gov (United States)

    Barro-Soria, Rene; Rebolledo, Santiago; Liin, Sara I.; Perez, Marta E.; Sampson, Kevin J.; Kass, Robert S.; Larsson, H. Peter

    2014-04-01

    The functional properties of KCNQ1 channels are highly dependent on associated KCNE-β subunits. Mutations in KCNQ1 or KCNE subunits can cause congenital channelopathies, such as deafness, cardiac arrhythmias and epilepsy. The mechanism by which KCNE1-β subunits slow the kinetics of KCNQ1 channels is a matter of current controversy. Here we show that KCNQ1/KCNE1 channel activation occurs in two steps: first, mutually independent voltage sensor movements in the four KCNQ1 subunits generate the main gating charge movement and underlie the initial delay in the activation time course of KCNQ1/KCNE1 currents. Second, a slower and concerted conformational change of all four voltage sensors and the gate, which opens the KCNQ1/KCNE1 channel. Our data show that KCNE1 divides the voltage sensor movement into two steps with widely different voltage dependences and kinetics. The two voltage sensor steps in KCNQ1/KCNE1 channels can be pharmacologically isolated and further separated by a disease-causing mutation.

  3. Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

    Science.gov (United States)

    Dalla Betta, G.-F.; Ayllon, N.; Boscardin, M.; Hoeferkamp, M.; Mattiazzo, S.; McDuff, H.; Mendicino, R.; Povoli, M.; Seidel, S.; Sultan, D. M. S.; Zorzi, N.

    2016-09-01

    We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

  4. Voltage dependence of Hodgkin-Huxley rate functions for a multistage K+ channel voltage sensor within a membrane

    Science.gov (United States)

    Vaccaro, S. R.

    2014-11-01

    The activation of a K+channel sensor in two sequential stages during a voltage clamp may be described as the translocation of a Brownian particle in an energy landscape with two large barriers between states. A solution of the Smoluchowski equation for a square-well approximation to the potential function of the S4 voltage sensor satisfies a master equation and has two frequencies that may be determined from the forward and backward rate functions. When the higher-frequency terms have small amplitude, the solution reduces to the relaxation of a rate equation, where the derived two-state rate functions are dependent on the relative magnitude of the forward rates (α and γ ) and the backward rates (β and δ ) for each stage. In particular, the voltage dependence of the Hodgkin-Huxley rate functions for a K+channel may be derived by assuming that the rate functions of the first stage are large relative to those of the second stage—α ≫γ and β ≫δ . For a Shaker IR K+ channel, the first forward and backward transitions are rate limiting (α <γ and δ ≪β ), and for an activation process with either two or three stages, the derived two-state rate functions also have a voltage dependence that is of a similar form to that determined for the squid axon. The potential variation generated by the interaction between a two-stage K+ ion channel and a noninactivating Na+ ion channel is determined by the master equation for K+channel activation and the ionic current equation when the Na+channel activation time is small, and if β ≪δ and α ≪γ , the system may exhibit a small amplitude oscillation between spikes, or mixed-mode oscillation, in which the slow closed state modulates the K+ ion channel conductance in the membrane.

  5. Bio-Inspired Carbon Monoxide Sensors with Voltage-Activated Sensitivity

    KAUST Repository

    Savagatrup, Suchol

    2017-09-27

    Carbon monoxide (CO) outcompetes oxygen when binding to the iron center of hemeproteins, leading to a reduction in blood oxygen level and acute poisoning. Harvesting the strong specific interaction between CO and the iron porphyrin provides a highly selective and customizable sensor. We report the development of chemiresistive sensors with voltage-activated sensitivity for the detection of CO comprising iron porphyrin and functionalized single-walled carbon nanotubes (F-SWCNTs). Modulation of the gate voltage offers a predicted extra dimension for sensing. Specifically, the sensors show a significant increase in sensitivity toward CO when negative gate voltage is applied. The dosimetric sensors are selective to ppm levels of CO and functional in air. UV/Vis spectroscopy, differential pulse voltammetry, and density functional theory reveal that the in situ reduction of FeIII to FeII enhances the interaction between the F-SWCNTs and CO. Our results illustrate a new mode of sensors wherein redox active recognition units are voltage-activated to give enhanced and highly specific responses.

  6. Pressure-voltage trap for DNA near a solid-state nanopore.

    Science.gov (United States)

    Hoogerheide, David P; Lu, Bo; Golovchenko, Jene A

    2014-07-22

    We report the formation of a tunable single DNA molecule trap near a solid-state nanopore in an electrolyte solution under conditions where an electric force and a pressure-induced viscous flow force on the molecule are nearly balanced. Trapped molecules can enter the pore multiple times before escaping the trap by passing through the pore or by diffusing away. Statistical analysis of many individually trapped molecules yields a detailed picture of the fluctuation phenomena involved, which are successfully modeled by a one-dimensional first passage approach.

  7. An active trap filter for high-power voltage source converters

    DEFF Research Database (Denmark)

    Bai, Haofeng; Wang, Xiongfei; Loh, Poh Chiang;

    2015-01-01

    This paper proposes a power electronic based device to actively trap the switching current ripples for highpower converters. Control principle and system design of the active trap filter are discussed first. Comparisons of the active trap filter with LCL and LLCL filters are then carried out...... in time-domain simulations and experimental tests. The results demonstrate that the active trap filter not only provides more controllability and flexibility than the passive filters, but also mitigates the adverse effects of parameter shifts on harmonic filtering performance of passive filters....

  8. A Fiber-Optic Sensor for Acoustic Emission Detection in a High Voltage Cable System

    Directory of Open Access Journals (Sweden)

    Tongzhi Zhang

    2016-11-01

    Full Text Available We have proposed and demonstrated a Michelson interferometer-based fiber sensor for detecting acoustic emission generated from the partial discharge (PD of the accessories of a high-voltage cable system. The developed sensor head is integrated with a compact and relatively high sensitivity cylindrical elastomer. Such a sensor has a broadband frequency response and a relatively high sensitivity in a harsh environment under a high-voltage electric field. The design and fabrication of the sensor head integrated with the cylindrical elastomer is described, and a series of experiments was conducted to evaluate the sensing performance. The experimental results demonstrate that the sensitivity of our developed sensor for acoustic detection of partial discharges is 1.7 rad / ( m ⋅ Pa . A high frequency response up to 150 kHz is achieved. Moreover, the relatively high sensitivity for the detection of PD is verified in both the laboratory environment and gas insulated switchgear. The obtained results show the great potential application of a Michelson interferometer-based fiber sensor integrated with a cylindrical elastomer for in-situ monitoring high-voltage cable accessories for safety work.

  9. A Fiber-Optic Sensor for Acoustic Emission Detection in a High Voltage Cable System.

    Science.gov (United States)

    Zhang, Tongzhi; Pang, Fufei; Liu, Huanhuan; Cheng, Jiajing; Lv, Longbao; Zhang, Xiaobei; Chen, Na; Wang, Tingyun

    2016-11-30

    We have proposed and demonstrated a Michelson interferometer-based fiber sensor for detecting acoustic emission generated from the partial discharge (PD) of the accessories of a high-voltage cable system. The developed sensor head is integrated with a compact and relatively high sensitivity cylindrical elastomer. Such a sensor has a broadband frequency response and a relatively high sensitivity in a harsh environment under a high-voltage electric field. The design and fabrication of the sensor head integrated with the cylindrical elastomer is described, and a series of experiments was conducted to evaluate the sensing performance. The experimental results demonstrate that the sensitivity of our developed sensor for acoustic detection of partial discharges is 1.7 rad / ( m ⋅ Pa ) . A high frequency response up to 150 kHz is achieved. Moreover, the relatively high sensitivity for the detection of PD is verified in both the laboratory environment and gas insulated switchgear. The obtained results show the great potential application of a Michelson interferometer-based fiber sensor integrated with a cylindrical elastomer for in-situ monitoring high-voltage cable accessories for safety work.

  10. Acoustofluidic particle trapping, manipulation, and release using dynamic-mode cantilever sensors.

    Science.gov (United States)

    Johnson, Blake N; Mutharasan, Raj

    2016-12-19

    We show here that dynamic-mode cantilever sensors enable acoustofluidic fluid mixing and trapping of suspended particles as well as the rapid manipulation and release of trapped micro-particles via mode switching in liquid. Resonant modes of piezoelectric cantilever sensors over the 0 to 8 MHz frequency range are investigated. Sensor impedance response, flow visualization studies using dye and micro-particle tracers (100 μm diameter), and finite element simulations of cantilever modal mechanics and acoustic streaming show fluid mixing and particle trapping configurations depend on the resonant mode shape. We found trapped particles could be: (1) rapidly manipulated on millimeter length scales, and (2) released from the cantilever surface after trapping by switching between low- and high-order resonant modes (less than 250 kHz and greater than 1 MHz, respectively). Such results suggest a potentially promising future for dynamic-mode cantilevers in separations, pumping and mixing applications as well as acoustofluidic-enhanced sensing applications.

  11. Voltage dependence of Hodgkin-Huxley rate functions for a multistage K^{+} channel voltage sensor within a membrane.

    Science.gov (United States)

    Vaccaro, S R

    2014-11-01

    The activation of a K^{+} channel sensor in two sequential stages during a voltage clamp may be described as the translocation of a Brownian particle in an energy landscape with two large barriers between states. A solution of the Smoluchowski equation for a square-well approximation to the potential function of the S4 voltage sensor satisfies a master equation and has two frequencies that may be determined from the forward and backward rate functions. When the higher-frequency terms have small amplitude, the solution reduces to the relaxation of a rate equation, where the derived two-state rate functions are dependent on the relative magnitude of the forward rates (α and γ) and the backward rates (β and δ) for each stage. In particular, the voltage dependence of the Hodgkin-Huxley rate functions for a K^{+} channel may be derived by assuming that the rate functions of the first stage are large relative to those of the second stage-α≫γ and β≫δ. For a Shaker IR K^{+} channel, the first forward and backward transitions are rate limiting (αchannel and a noninactivating Na^{+} ion channel is determined by the master equation for K^{+} channel activation and the ionic current equation when the Na^{+} channel activation time is small, and if β≪δ and α≪γ, the system may exhibit a small amplitude oscillation between spikes, or mixed-mode oscillation, in which the slow closed state modulates the K^{+} ion channel conductance in the membrane.

  12. Manufacturing challenges of optical current and voltage sensors for utility applications

    Energy Technology Data Exchange (ETDEWEB)

    Yakymyshyn, C.P. [Montana State Univ., Bozeman, MT (United States). Dept. of Electrical and Computer Engineering; Brubaker, M.A. [Los Alamos National Lab., NM (United States); Johnston, P.M. [Johnston (Paul M.), Raleigh, NC (United States); Reinbold, C. [ABB High Voltage Switchgear, Greensburg, PA (United States)

    1997-12-01

    Measurement of voltages and currents in power transmission and distribution systems are critical to the electric utility industry for both revenue metering and reliability. Nonconventional instrument transformers based on intensity modulation of optical signals have been reported in the literature for more than 20 years. Recently described devices using passive bulk optical sensor elements include the Electro-Optic Voltage Transducer (EOVT) and Magneto-Optic Current Transducer (MOCT). These technologies offer substantial advantages over conventional instrument transformers in accuracy, optical isolation bandwidth, environmental compatibility, weight and size. This paper describes design and manufacturing issues associated with the EOVT and the Optical Metering Unit (OMU) recently introduced by ABB with field installation results presented for prototype units in the 345 kV and 420 kV voltage classes. The OMU incorporates an EOVT and MOCT to monitor the voltage and current on power transmission lines using a single free-standing device.

  13. Manufacturing challenges of optical current and voltage sensors for utility applications

    Energy Technology Data Exchange (ETDEWEB)

    Yakymyshyn, C.P. [Montana State Univ., Bozeman, MT (United States). Dept. of Electrical and Computer Engineering; Brubaker, M.A. [Los Alamos National Lab., NM (United States); Johnston, P.M. [Johnston (Paul M.), Raleigh, NC (United States); Reinbold, C. [ABB High Voltage Switchgear, Greensburg, PA (United States)

    1997-12-01

    Measurement of voltages and currents in power transmission and distribution systems are critical to the electric utility industry for both revenue metering and reliability. Nonconventional instrument transformers based on intensity modulation of optical signals have been reported in the literature for more than 20 years. Recently described devices using passive bulk optical sensor elements include the Electro-Optic Voltage Transducer (EOVT) and Magneto-Optic Current Transducer (MOCT). These technologies offer substantial advantages over conventional instrument transformers in accuracy, optical isolation bandwidth, environmental compatibility, weight and size. This paper describes design and manufacturing issues associated with the EOVT and the Optical Metering Unit (OMU) recently introduced by ABB with field installation results presented for prototype units in the 345 kV and 420 kV voltage classes. The OMU incorporates an EOVT and MOCT to monitor the voltage and current on power transmission lines using a single free-standing device.

  14. Molecular Dynamics Simulations of Voltage Gated Cation Channels: Insights on Voltage-Sensor Domain Function and Modulation

    Directory of Open Access Journals (Sweden)

    Lucie eDelemotte

    2012-05-01

    Full Text Available Since their discovery in the 1950s, the structure and function of voltage gated cation channels (VGCC has been largely understood thanks to results stemming from electrophysiology, pharmacology, spectroscopy and structural biology. Over the past decade, computational methods such as molecular dynamics (MD simulations have also contributed, providing molecular level information that can be tested against experimental results, thereby allowing the validation of the models and protocols. Importantly, MD can shed light on elements of VGCC function that cannot be easily accessed through classical experiments. Here, we review the results of recent MD simulations addressing key questions that pertain to the function and modulation of the VGCC’s voltage sensor domain (VSD highlighting: 1 the movement of the S4-helix basic residues during channel activation, articulating how the electrical driving force acts upon them; 2 the nature of the VSD intermediate states on transitioning between open and closed states of the VGCC; and 3 the molecular level effects on the VSD arising from mutations of specific S4 positively charged residues involved in certain genetic diseases.

  15. Mapping of voltage sensor positions in resting and inactivated mammalian sodium channels by LRET.

    Science.gov (United States)

    Kubota, Tomoya; Durek, Thomas; Dang, Bobo; Finol-Urdaneta, Rocio K; Craik, David J; Kent, Stephen B H; French, Robert J; Bezanilla, Francisco; Correa, Ana M

    2017-03-07

    Voltage-gated sodium channels (Navs) play crucial roles in excitable cells. Although vertebrate Nav function has been extensively studied, the detailed structural basis for voltage-dependent gating mechanisms remain obscure. We have assessed the structural changes of the Nav voltage sensor domain using lanthanide-based resonance energy transfer (LRET) between the rat skeletal muscle voltage-gated sodium channel (Nav1.4) and fluorescently labeled Nav1.4-targeting toxins. We generated donor constructs with genetically encoded lanthanide-binding tags (LBTs) inserted at the extracellular end of the S4 segment of each domain (with a single LBT per construct). Three different Bodipy-labeled, Nav1.4-targeting toxins were synthesized as acceptors: β-scorpion toxin (Ts1)-Bodipy, KIIIA-Bodipy, and GIIIA-Bodipy analogs. Functional Nav-LBT channels expressed in Xenopus oocytes were voltage-clamped, and distinct LRET signals were obtained in the resting and slow inactivated states. Intramolecular distances computed from the LRET signals define a geometrical map of Nav1.4 with the bound toxins, and reveal voltage-dependent structural changes related to channel gating.

  16. Mapping of voltage sensor positions in resting and inactivated mammalian sodium channels by LRET

    Science.gov (United States)

    Kubota, Tomoya; Durek, Thomas; Dang, Bobo; Finol-Urdaneta, Rocio K.; Craik, David J.; Kent, Stephen B. H.; French, Robert J.; Bezanilla, Francisco; Correa, Ana M.

    2017-01-01

    Voltage-gated sodium channels (Navs) play crucial roles in excitable cells. Although vertebrate Nav function has been extensively studied, the detailed structural basis for voltage-dependent gating mechanisms remain obscure. We have assessed the structural changes of the Nav voltage sensor domain using lanthanide-based resonance energy transfer (LRET) between the rat skeletal muscle voltage-gated sodium channel (Nav1.4) and fluorescently labeled Nav1.4-targeting toxins. We generated donor constructs with genetically encoded lanthanide-binding tags (LBTs) inserted at the extracellular end of the S4 segment of each domain (with a single LBT per construct). Three different Bodipy-labeled, Nav1.4-targeting toxins were synthesized as acceptors: β-scorpion toxin (Ts1)-Bodipy, KIIIA-Bodipy, and GIIIA-Bodipy analogs. Functional Nav-LBT channels expressed in Xenopus oocytes were voltage-clamped, and distinct LRET signals were obtained in the resting and slow inactivated states. Intramolecular distances computed from the LRET signals define a geometrical map of Nav1.4 with the bound toxins, and reveal voltage-dependent structural changes related to channel gating. PMID:28202723

  17. Monitoring pest insect traps by means of low-power image sensor technologies.

    Science.gov (United States)

    López, Otoniel; Rach, Miguel Martinez; Migallon, Hector; Malumbres, Manuel P; Bonastre, Alberto; Serrano, Juan J

    2012-11-13

    Monitoring pest insect populations is currently a key issue in agriculture and forestry protection. At the farm level, human operators typically must perform periodical surveys of the traps disseminated through the field. This is a labor-, time- and cost-consuming activity, in particular for large plantations or large forestry areas, so it would be of great advantage to have an affordable system capable of doing this task automatically in an accurate and a more efficient way. This paper proposes an autonomous monitoring system based on a low-cost image sensor that it is able to capture and send images of the trap contents to a remote control station with the periodicity demanded by the trapping application. Our autonomous monitoring system will be able to cover large areas with very low energy consumption. This issue would be the main key point in our study; since the operational live of the overall monitoring system should be extended to months of continuous operation without any kind of maintenance (i.e., battery replacement). The images delivered by image sensors would be time-stamped and processed in the control station to get the number of individuals found at each trap. All the information would be conveniently stored at the control station, and accessible via Internet by means of available network services at control station (WiFi, WiMax, 3G/4G, etc.).

  18. Monitoring Pest Insect Traps by Means of Low-Power Image Sensor Technologies

    Directory of Open Access Journals (Sweden)

    Juan J. Serrano

    2012-11-01

    Full Text Available Monitoring pest insect populations is currently a key issue in agriculture and forestry protection. At the farm level, human operators typically must perform periodical surveys of the traps disseminated through the field. This is a labor-, time- and cost-consuming activity, in particular for large plantations or large forestry areas, so it would be of great advantage to have an affordable system capable of doing this task automatically in an accurate and a more efficient way. This paper proposes an autonomous monitoring system based on a low-cost image sensor that it is able to capture and send images of the trap contents to a remote control station with the periodicity demanded by the trapping application. Our autonomous monitoring system will be able to cover large areas with very low energy consumption. This issue would be the main key point in our study; since the operational live of the overall monitoring system should be extended to months of continuous operation without any kind of maintenance (i.e., battery replacement. The images delivered by image sensors would be time-stamped and processed in the control station to get the number of individuals found at each trap. All the information would be conveniently stored at the control station, and accessible via Internet by means of available network services at control station (WiFi, WiMax, 3G/4G, etc..

  19. Asymmetric functional contributions of acidic and aromatic side chains in sodium channel voltage-sensor domains

    DEFF Research Database (Denmark)

    Pless, Stephan Alexander; Elstone, Fisal D; Niciforovic, Ana P

    2014-01-01

    functional phenotypes that are different from those observed previously in Kv VSDs. In contrast, and similar to results obtained with Kv channels, individually neutralizing acidic side chains with synthetic derivatives and with natural amino acid substitutions in the INC had little or no effect......Voltage-gated sodium (NaV) channels mediate electrical excitability in animals. Despite strong sequence conservation among the voltage-sensor domains (VSDs) of closely related voltage-gated potassium (KV) and NaV channels, the functional contributions of individual side chains in Nav VSDs remain...... largely enigmatic. To this end, natural and unnatural side chain substitutions were made in the S2 hydrophobic core (HC), the extracellular negative charge cluster (ENC), and the intracellular negative charge cluster (INC) of the four VSDs of the skeletal muscle sodium channel isoform (NaV1...

  20. MoS2 oxygen sensor with gate voltage stress induced performance enhancement

    Science.gov (United States)

    Tong, Yu; Lin, Zhenhua; Thong, John T. L.; Chan, Daniel S. H.; Zhu, Chunxiang

    2015-09-01

    Two-dimensional (2D) materials have recently attracted wide attention and rapidly established themselves in various applications. In particular, 2D materials are regarded as promising building blocks for gas sensors due to their high surface-to-volume ratio, ease in miniaturization, and flexibility in enabling wearable electronics. Compared with other 2D materials, MoS2 is particularly intriguing because it has been widely researched and exhibits semiconducting behavior. Here, we have fabricated MoS2 resistor based O2 sensors with a back gate configuration on a 285 nm SiO2/Si substrate. The effects of applying back gate voltage stress on O2 sensing performance have been systematically investigated. With a positive gate voltage stress, the sensor response improves and the response is improved to 29.2% at O2 partial pressure of 9.9 × 10-5 millibars with a +40 V back-gate bias compared to 21.2% at O2 partial pressure of 1.4 × 10-4 millibars without back-gate bias; while under a negative gate voltage stress of -40 V, a fast and full recovery can be achieved at room temperature. In addition, a method in determining O2 partial pressure with a detectability as low as 6.7 × 10-7 millibars at a constant vacuum pressure is presented and its potential as a vacuum gauge is briefly discussed.

  1. High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors

    Science.gov (United States)

    Chen, Zuhui; Jie, Bin B.; Sah, Chih-Tang

    2008-11-01

    Steady-state Shockley-Read-Hall kinetics is employed to explore the high concentration effect of neutral-potential-well interface traps on the electron-hole recombination direct-current current-voltage (R-DCIV) properties in metal-oxide-silicon field-effect transistors. Extensive calculations include device parameter variations in neutral-trapping-potential-well electron interface-trap density NET (charge states 0 and -1), dopant impurity concentration PIM, oxide thickness Xox, forward source/drain junction bias VPN, and transistor temperature T. It shows significant distortion of the R-DCIV lineshape by the high concentrations of the interface traps. The result suggests that the lineshape distortion observed in past experiments, previously attributed to spatial variation in surface impurity concentration and energy distribution of interface traps in the silicon energy gap, can also arise from interface-trap concentration along surface channel region.

  2. Numerical Electric Field Analysis of Power Status Sensor Observing Power Distribution System Taking into Account Voltage Divider Measurement Circuit

    Science.gov (United States)

    Kubo, Takuro; Furukawa, Tatsuya; Itoh, Hideaki; Fukumoto, Hisao; Wakuya, Hiroshi; Ohchi, Masashi

    We have proposed and preproducted the voltage-current waveform sensor of resin molded type for measuring the power factor and harmonics in power distribution systems. We have executed numerical electromagnetic analyses using the finite element method to estimate the characteristics and behaviours of the sensor. Although the magnetic field analyses for the current sensor have involved the measurement circuit, the electric field analyses have not included the measurement circuit for measuring voltage waveforms of power lines. In this paper, we describe the electric field analyses with the measurement circuit and prove the insulating strength of the proposed sensor permissible to the use in 22kV power distribution systems.

  3. Characterization and performance studies of high-voltage CMOS based pixel sensors

    CERN Document Server

    Smaranda, Dumitru Dan

    2015-01-01

    The high luminosity upgrade of the LHC will push the limits for detectors, specially the silicon trackers which are closest to the interaction point. The ATLAS CMOS Sensor R&D efort is investigating a new technology using high-voltage CMOS processes for producing pixel and strip sensors. In contrast to the currently used technology these devices implement active electronics on the sensor itself, offering a multitude of tuning parameters for achieving the best performance. My summer project revolved around characterising existing samples along with assembling and debugging hardware required for their improvement and functionality. Other tasks involved writing communication protocols using pyBAR to remotely control injection circuitry on a GPAC card, and helping various members of the group with data collection and analysis. Through the summer student programme I have had the opportunity to be part of a vibrant scientic community at the forefront of research, to create bonds with fellow students from univ...

  4. Stabilization of the Activated hERG Channel Voltage Sensor by Depolarization Involves the S4-S5 Linker.

    Science.gov (United States)

    Thouta, Samrat; Hull, Christina M; Shi, Yu Patrick; Sergeev, Valentine; Young, James; Cheng, Yen M; Claydon, Thomas W

    2017-01-24

    Slow deactivation of hERG channels is critical for preventing cardiac arrhythmia yet the mechanistic basis for the slow gating transition is unclear. Here, we characterized the temporal sequence of events leading to voltage sensor stabilization upon membrane depolarization. Progressive increase in step depolarization duration slowed voltage-sensor return in a biphasic manner (τfast = 34 ms, τslow = 2.5 s). The faster phase of voltage-sensor return slowing correlated with the kinetics of pore opening. The slower component occurred over durations that exceeded channel activation and was consistent with voltage sensor relaxation. The S4-S5 linker mutation, G546L, impeded the faster phase of voltage sensor stabilization without attenuating the slower phase, suggesting that the S4-S5 linker is important for communications between the pore gate and the voltage sensor during deactivation. These data also demonstrate that the mechanisms of pore gate-opening-induced and relaxation-induced voltage-sensor stabilization are separable. Deletion of the distal N-terminus (Δ2-135) accelerated off-gating current, but did not influence the relative contribution of either mechanism of stabilization of the voltage sensor. Lastly, we characterized mode-shift behavior in hERG channels, which results from stabilization of activated channel states. The apparent mode-shift depended greatly on recording conditions. By measuring slow activation and deactivation at steady state we found the "true" mode-shift to be ∼15 mV. Interestingly, the "true" mode-shift of gating currents was ∼40 mV, much greater than that of the pore gate. This demonstrates that voltage sensor return is less energetically favorable upon repolarization than pore gate closure. We interpret this to indicate that stabilization of the activated voltage sensor limits the return of hERG channels to rest. The data suggest that this stabilization occurs as a result of reconfiguration of the pore gate upon opening by

  5. An efficient biosensor made of an electromagnetic trap and a magneto-resistive sensor

    KAUST Repository

    Li, Fuquan

    2014-09-01

    Magneto-resistive biosensors have been found to be useful because of their high sensitivity, low cost, small size, and direct electrical output. They use super-paramagnetic beads to label a biological target and detect it via sensing the stray field. In this paper, we report a new setup for magnetic biosensors, replacing the conventional "sandwich" concept with an electromagnetic trap. We demonstrate the capability of the biosensor in the detection of E. coli. The trap is formed by a current-carrying microwire that attracts the magnetic beads into a sensing space on top of a tunnel magneto-resistive sensor. The sensor signal depends on the number of beads in the sensing space, which depends on the size of the beads. This enables the detection of biological targets, because such targets increase the volume of the beads. Experiments were carried out with a 6. μm wide microwire, which attracted the magnetic beads from a distance of 60. μm, when a current of 30. mA was applied. A sensing space of 30. μm in length and 6. μm in width was defined by the magnetic sensor. The results showed that individual E. coli bacterium inside the sensing space could be detected using super-paramagnetic beads that are 2.8. μm in diameter. The electromagnetic trap setup greatly simplifies the device and reduces the detection process to two steps: (i) mixing the bacteria with magnetic beads and (ii) applying the sample solution to the sensor for measurement, which can be accomplished within about 30. min with a sample volume in the μl range. This setup also ensures that the biosensor can be cleaned easily and re-used immediately. The presented setup is readily integrated on chips via standard microfabrication techniques. © 2014 Elsevier B.V.

  6. A Series-LC-Filterd Active Trap Filter for High Power Voltage Source Inverter

    DEFF Research Database (Denmark)

    Bai, Haofeng; Wang, Xiongfei; Loh, Poh Chiang

    2016-01-01

    current control of the auxiliary converter, which can be challenging considering that the switching harmonics have very high orders. In this paper, an Active Trap Filter (ATF) based on output impedance shaping is proposed. It is able to bypass the switching harmonics by providing nearly zero output...... impedance. A series-LC-filter is used to reduce the power rating and synthesize the desired output impedance of the ATF. Compared with the existing approaches, the compensated frequency range is greatly enlarged. Also, the current reference is simply set to zero, which reduces the complexity of the control...

  7. A Series-LC-Filtered Active Trap Filter for High Power Voltage Source Inverter

    DEFF Research Database (Denmark)

    Bai, Haofeng; Wang, Xiongfei; Loh, Poh Chiang

    2016-01-01

    current control of the auxiliary converter, which can be challenging considering that the switching harmonics have very high orders. In this paper, an Active Trap Filter (ATF) based on output impedance shaping is proposed. It is able to bypass the switching harmonics by providing nearly zero output...... impedance. A series-LC-filter is used to reduce the power rating and synthesize the desired output impedance of the ATF. Compared with the existing approaches, the compensated frequency range is greatly enlarged. Also, the current reference is simply set to zero, which reduces the complexity of the control...

  8. Structural Dynamics of an Isolated-Voltage Sensor Domain in Lipid Bilayer

    Science.gov (United States)

    Chakrapani, Sudha; Cuello, Luis G.; Cortes, Marien D.; Perozo, Eduardo

    2009-01-01

    Summary A strong interplay between the voltage-sensor domain (VSD) and the pore domain (PD) underlies voltage-gated channel functions. In a few voltage-sensitive proteins, the VSD has been shown to function without a canonical PD, although its structure and oligomeric state remain unknown. Here using EPR spectroscopy we show that the isolated-VSD of KvAP can remain monomeric in reconstituted bilayer and retain a transmembrane conformation. We find that water-filled crevices extend deep into the membrane around S3, a scaffold conducive to transport of proton/cations is intrinsic to the VSD. Differences in solvent accessibility in comparison to the full-length KvAP, allowed us to define an interacting footprint of the PD on the VSD. This interaction is centered around S1 and S2 and shows a rotation of 70–100° relative to Kv1.2-Kv2.1 chimera. Sequence-conservation patterns in Kv channels, Hv channels and voltage-sensitive phosphatases reveal several near-universal features suggesting a common molecular architecture for all VSDs. PMID:18334215

  9. Analysis of the Light Propagation Model of the Optical Voltage Sensor for Suppressing Unreciprocal Errors.

    Science.gov (United States)

    Li, Hui; Fu, Zhida; Liu, Liying; Lin, Zhili; Deng, Wei; Feng, Lishuang

    2017-01-03

    An improved temperature-insensitive optical voltage sensor (OVS) with a reciprocal dual-crystal sensing method is proposed. The inducing principle of OVS reciprocity degradation is expounded by taking the different temperature fields of two crystals and the axis-errors of optical components into consideration. The key parameters pertaining to the system reciprocity degeneration in the dual-crystal sensing unit are investigated in order to optimize the optical sensing model based on the Maxwell's electromagnetic theory. The influencing principle of axis-angle errors on the system nonlinearity in the Pockels phase transfer unit is analyzed. Moreover, a novel axis-angle compensation method is proposed to improve the OVS measurement precision according to the simulation results. The experiment results show that the measurement precision of OVS is superior to ±0.2% in the temperature range from -40 °C to +60 °C, which demonstrates the excellent temperature stability of the designed voltage sensing system.

  10. Solution structure and phospholipid interactions of the isolated voltage-sensor domain from KvAP.

    Science.gov (United States)

    Butterwick, Joel A; MacKinnon, Roderick

    2010-11-05

    Voltage-sensor domains (VSDs) are specialized transmembrane segments that confer voltage sensitivity to many proteins such as ion channels and enzymes. The activities of these domains are highly dependent on both the chemical properties and the physical properties of the surrounding membrane environment. To learn about VSD-lipid interactions, we used nuclear magnetic resonance spectroscopy to determine the structure and phospholipid interface of the VSD from the voltage-dependent K(+) channel KvAP (prokaryotic Kv from Aeropyrum pernix). The solution structure of the KvAP VSD solubilized within phospholipid micelles is similar to a previously determined crystal structure solubilized by a nonionic detergent and complexed with an antibody fragment. The differences observed include a previously unidentified short amphipathic α-helix that precedes the first transmembrane helix and a subtle rigid-body repositioning of the S3-S4 voltage-sensor paddle. Using (15)N relaxation experiments, we show that much of the VSD, including the pronounced kink in S3 and the S3-S4 paddle, is relatively rigid on the picosecond-to-nanosecond timescale. In contrast, the kink in S3 is mobile on the microsecond-to-millisecond timescale and may act as a hinge in the movement of the paddle during channel gating. We characterized the VSD-phospholipid micelle interactions using nuclear Overhauser effect spectroscopy and showed that the micelle uniformly coats the KvAP VSD and approximates the chemical environment of a phospholipid bilayer. Using paramagnetically labeled phospholipids, we show that bilayer-forming lipids interact with the S3 and S4 helices more strongly than with S1 and S2.

  11. Mutations within the S4-S5 linker alter voltage sensor constraints in hERG K+ channels.

    Science.gov (United States)

    Van Slyke, Aaron C; Rezazadeh, Saman; Snopkowski, Mischa; Shi, Patrick; Allard, Charlene R; Claydon, Tom W

    2010-11-03

    Human ether-a-go-go related gene (hERG) channel gating is associated with slow activation, yet the mechanistic basis for this is unclear. Here, we examine the effects of mutation of a unique glycine residue (G546) in the S4-S5 linker on voltage sensor movement and its coupling to pore gating. Substitution of G546 with residues possessing different physicochemical properties shifted activation gating by ∼-50 mV (with the exception of G546C). With the activation shift taken into account, the time constant of activation was also accelerated, suggesting a stabilization of the closed state by ∼1.6-4.3 kcal/mol (the energy equivalent of one to two hydrogen bonds). Predictions of the α-helical content of the S4-S5 linker suggest that the presence of G546 in wild-type hERG provides flexibility to the helix. Deactivation gating was affected differentially by the G546 substitutions. G546V induced a pronounced slow component of closing that was voltage-independent. Fluorescence measurements of voltage sensor movement in G546V revealed a slow component of voltage sensor return that was uncoupled from charge movement, suggesting a direct effect of the mutation on voltage sensor movement. These data suggest that G546 plays a critical role in channel gating and that hERG channel closing involves at least two independently modifiable reconfigurations of the voltage sensor.

  12. MoS{sub 2} oxygen sensor with gate voltage stress induced performance enhancement

    Energy Technology Data Exchange (ETDEWEB)

    Tong, Yu; Lin, Zhenhua; Thong, John T. L.; Chan, Daniel S. H.; Zhu, Chunxiang, E-mail: elezhucx@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 (Singapore)

    2015-09-21

    Two-dimensional (2D) materials have recently attracted wide attention and rapidly established themselves in various applications. In particular, 2D materials are regarded as promising building blocks for gas sensors due to their high surface-to-volume ratio, ease in miniaturization, and flexibility in enabling wearable electronics. Compared with other 2D materials, MoS{sub 2} is particularly intriguing because it has been widely researched and exhibits semiconducting behavior. Here, we have fabricated MoS{sub 2} resistor based O{sub 2} sensors with a back gate configuration on a 285 nm SiO{sub 2}/Si substrate. The effects of applying back gate voltage stress on O{sub 2} sensing performance have been systematically investigated. With a positive gate voltage stress, the sensor response improves and the response is improved to 29.2% at O{sub 2} partial pressure of 9.9 × 10{sup −5} millibars with a +40 V back-gate bias compared to 21.2% at O{sub 2} partial pressure of 1.4 × 10{sup −4} millibars without back-gate bias; while under a negative gate voltage stress of −40 V, a fast and full recovery can be achieved at room temperature. In addition, a method in determining O{sub 2} partial pressure with a detectability as low as 6.7 × 10{sup −7} millibars at a constant vacuum pressure is presented and its potential as a vacuum gauge is briefly discussed.

  13. A half-ring GMR sensor for detection of magnetic beads immobilized on a circular micro-trap

    KAUST Repository

    Gooneratne, Chinthaka Pasan

    2011-11-01

    Utilizing magnetic principles in biological immunoassays is an attractive option given its ability to remotely and non-invasively manipulate and detect cells tagged with micro/nano size superparamagnetic type beads and due to the fact that even the most complex biological immunoassays will have very little magnetic effect. The presence of magnetic beads can be detected by a magnetic sensor which quantifies the amount of target cells present in the immunoassay. In order to increase the detection rate a circular conducting micro-trap is employed to attract, trap and transport the magnetic beads to the sensing area. In this research we propose a half-ring spin valve type giant magnetoresistance (GMR) sensor for the measurement of stray fields produced by 2 μm magnetic beads which are around the circular micro-trap. A couple of half-ring GMR sensors can be used to cover the entire circular border width, in order to detect the majority of the immobilized magnetic beads. Analytical and numerical analysis leading towards the fabrication of the half-ring GMR sensor are presented. DC characterization of the fabricated sensor showed a magnetoresistance of 5.9 %. Experimental results showed that the half-ring GMR sensor detected the presence of 2 μm magnetic beads. Hence, half-ring GMR sensors integrated with a circular micro-trap have great potential to be used as an effective disease diagnostic device. © 2011 IEEE.

  14. A novel bioelectrochemical BOD sensor operating with voltage input.

    Science.gov (United States)

    Modin, Oskar; Wilén, Britt-Marie

    2012-11-15

    Biochemical oxygen demand (BOD) is a measure of biodegradable compounds in water and is, for example, a common parameter to design and assess the performance of wastewater treatment plants. The conventional method to measure BOD is time consuming (5 or 7 days) and requires trained personnel. Bioelectrochemical BOD sensors designed as microbial fuel cells (MFCs), which are systems where bacteria convert organic matter into an electrical current, have emerged as an alternative to the conventional technique. In this study, a new type of bioelectrochemical BOD sensor with features that overcome some of the limitations of current MFC-type designs was developed: (1) An external voltage was applied to overcome internal resistances and allow bacteria to generate current at their full capacity, and (2) the ion exchange membrane was omitted to avoid pH shifts that would otherwise limit the applicability of the sensor for wastewaters with low alkalinity. The sensor was calibrated with an aerated nutrient medium containing acetate as the BOD source. Linear correlation (R(2) = 0.97) with charge was obtained for BOD concentrations ranging from 32 to 1280 mg/L in a reaction time of 20 h. Lowering the reaction time to 5 h resulted in lowering the measurable BOD concentration range to 320 mg/L (R(2) = 0.99). Propionate, glucose, and ethanol could also be analyzed by the sensor that was acclimated to acetate. The study demonstrates a way to design more robust and simple bioelectrochemical BOD sensors that do not suffer from the usual limitations of MFCs (high internal resistance and pH shifts).

  15. Transfer of Kv3.1 voltage sensor features to the isolated Ci-VSP voltage-sensing domain.

    Science.gov (United States)

    Mishina, Yukiko; Mutoh, Hiroki; Knöpfel, Thomas

    2012-08-22

    Membrane proteins that respond to changes in transmembrane voltage are critical in regulating the function of living cells. The voltage-sensing domains (VSDs) of voltage-gated ion channels are extensively studied to elucidate voltage-sensing mechanisms, and yet many aspects of their structure-function relationship remain elusive. Here, we transplanted homologous amino acid motifs from the tetrameric voltage-activated potassium channel Kv3.1 to the monomeric VSD of Ciona intestinalis voltage-sensitive phosphatase (Ci-VSP) to explore which portions of Kv3.1 subunits depend on the tetrameric structure of Kv channels and which properties of Kv3.1 can be transferred to the monomeric Ci-VSP scaffold. By attaching fluorescent proteins to these chimeric VSDs, we obtained an optical readout to establish membrane trafficking and kinetics of voltage-dependent structural rearrangements. We found that motifs extending from 10 to roughly 100 amino acids can be readily transplanted from Kv3.1 into Ci-VSP to form engineered VSDs that efficiently incorporate into the plasma membrane and sense voltage. Some of the functional features of these engineered VSDs are reminiscent of Kv3.1 channels, indicating that these properties do not require interactions between Kv subunits or between the voltage sensing and the pore domains of Kv channels.

  16. Design, Experiments and Simulation of Voltage Transformers on the Basis of a Differential Input D-dot Sensor

    Directory of Open Access Journals (Sweden)

    Jingang Wang

    2014-07-01

    Full Text Available Currently available traditional electromagnetic voltage sensors fail to meet the measurement requirements of the smart grid, because of low accuracy in the static and dynamic ranges and the occurrence of ferromagnetic resonance attributed to overvoltage and output short circuit. This work develops a new non-contact high-bandwidth voltage measurement system for power equipment. This system aims at the miniaturization and non-contact measurement of the smart grid. After traditional D-dot voltage probe analysis, an improved method is proposed. For the sensor to work in a self-integrating pattern, the differential input pattern is adopted for circuit design, and grounding is removed. To prove the structure design, circuit component parameters, and insulation characteristics, Ansoft Maxwell software is used for the simulation. Moreover, the new probe was tested on a 10 kV high-voltage test platform for steady-state error and transient behavior. Experimental results ascertain that the root mean square values of measured voltage are precise and that the phase error is small. The D-dot voltage sensor not only meets the requirement of high accuracy but also exhibits satisfactory transient response. This sensor can meet the intelligence, miniaturization, and convenience requirements of the smart grid.

  17. Design, experiments and simulation of voltage transformers on the basis of a differential input D-dot sensor.

    Science.gov (United States)

    Wang, Jingang; Gao, Can; Yang, Jie

    2014-07-17

    Currently available traditional electromagnetic voltage sensors fail to meet the measurement requirements of the smart grid, because of low accuracy in the static and dynamic ranges and the occurrence of ferromagnetic resonance attributed to overvoltage and output short circuit. This work develops a new non-contact high-bandwidth voltage measurement system for power equipment. This system aims at the miniaturization and non-contact measurement of the smart grid. After traditional D-dot voltage probe analysis, an improved method is proposed. For the sensor to work in a self-integrating pattern, the differential input pattern is adopted for circuit design, and grounding is removed. To prove the structure design, circuit component parameters, and insulation characteristics, Ansoft Maxwell software is used for the simulation. Moreover, the new probe was tested on a 10 kV high-voltage test platform for steady-state error and transient behavior. Experimental results ascertain that the root mean square values of measured voltage are precise and that the phase error is small. The D-dot voltage sensor not only meets the requirement of high accuracy but also exhibits satisfactory transient response. This sensor can meet the intelligence, miniaturization, and convenience requirements of the smart grid.

  18. Voltage-sensor movements describe slow inactivation of voltage-gated sodium channels II: a periodic paralysis mutation in Na(V)1.4 (L689I).

    Science.gov (United States)

    Silva, Jonathan R; Goldstein, Steve A N

    2013-03-01

    In skeletal muscle, slow inactivation (SI) of Na(V)1.4 voltage-gated sodium channels prevents spontaneous depolarization and fatigue. Inherited mutations in Na(V)1.4 that impair SI disrupt activity-induced regulation of channel availability and predispose patients to hyperkalemic periodic paralysis. In our companion paper in this issue (Silva and Goldstein. 2013. J. Gen. Physiol. http://dx.doi.org/10.1085/jgp.201210909), the four voltage sensors in Na(V)1.4 responsible for activation of channels over microseconds are shown to slowly immobilize over 1-160 s as SI develops and to regain mobility on recovery from SI. Individual sensor movements assessed via attached fluorescent probes are nonidentical in their voltage dependence, time course, and magnitude: DI and DII track SI onset, and DIII appears to reflect SI recovery. A causal link was inferred by tetrodotoxin (TTX) suppression of both SI onset and immobilization of DI and DII sensors. Here, the association of slow sensor immobilization and SI is verified by study of Na(V)1.4 channels with a hyperkalemic periodic paralysis mutation; L689I produces complex changes in SI, and these are found to manifest directly in altered sensor movements. L689I removes a component of SI with an intermediate time constant (~10 s); the mutation also impedes immobilization of the DI and DII sensors over the same time domain in support of direct mechanistic linkage. A model that recapitulates SI attributes responsibility for intermediate SI to DI and DII (10 s) and a slow component to DIII (100 s), which accounts for residual SI, not impeded by L689I or TTX.

  19. Voltage-sensor movements describe slow inactivation of voltage-gated sodium channels II: A periodic paralysis mutation in NaV1.4 (L689I)

    Science.gov (United States)

    Silva, Jonathan R.

    2013-01-01

    In skeletal muscle, slow inactivation (SI) of NaV1.4 voltage-gated sodium channels prevents spontaneous depolarization and fatigue. Inherited mutations in NaV1.4 that impair SI disrupt activity-induced regulation of channel availability and predispose patients to hyperkalemic periodic paralysis. In our companion paper in this issue (Silva and Goldstein. 2013. J. Gen. Physiol. http://dx.doi.org/10.1085/jgp.201210909), the four voltage sensors in NaV1.4 responsible for activation of channels over microseconds are shown to slowly immobilize over 1–160 s as SI develops and to regain mobility on recovery from SI. Individual sensor movements assessed via attached fluorescent probes are nonidentical in their voltage dependence, time course, and magnitude: DI and DII track SI onset, and DIII appears to reflect SI recovery. A causal link was inferred by tetrodotoxin (TTX) suppression of both SI onset and immobilization of DI and DII sensors. Here, the association of slow sensor immobilization and SI is verified by study of NaV1.4 channels with a hyperkalemic periodic paralysis mutation; L689I produces complex changes in SI, and these are found to manifest directly in altered sensor movements. L689I removes a component of SI with an intermediate time constant (∼10 s); the mutation also impedes immobilization of the DI and DII sensors over the same time domain in support of direct mechanistic linkage. A model that recapitulates SI attributes responsibility for intermediate SI to DI and DII (10 s) and a slow component to DIII (100 s), which accounts for residual SI, not impeded by L689I or TTX. PMID:23401572

  20. Temperature- and supply voltage-independent time references for wireless sensor networks

    CERN Document Server

    De Smedt, Valentijn; Dehaene, Wim

    2015-01-01

    This book investigates the possible circuit solutions to overcome the temperature- and supply voltage-sensitivity of fully-integrated time references for ultra-low-power communication in wireless sensor networks. The authors provide an elaborate theoretical introduction and literature study to enable full understanding of the design challenges and shortcomings of current oscillator implementations.  Furthermore, a closer look to the short-term as well as the long-term frequency stability of integrated oscillators is taken. Next, a design strategy is developed and applied to 5 different oscillator topologies and 1 sensor interface.All 6 implementations are subject to an elaborate study of frequency stability, phase noise, and power consumption. In the final chapter all blocks are compared to the state of the art. The main goals of this book are: • to provide a comprehensive overview of timing issues and solutions in wireless sensor networks; • to gain understanding of all underlying mechanisms by starti...

  1. Growth and Characterization of Single Crystalline Bi4Ge3O12 Fibers for Electrooptic High Voltage Sensors

    Directory of Open Access Journals (Sweden)

    Stephan Wildermuth

    2013-01-01

    Full Text Available The micro-pulling-down technique for crystalline fiber growth is employed to grow fibers and thin rods of bismuth germanate, Bi4Ge3O12 (BGO, for use in electrooptic high voltage sensors. The motivation is the growth of fibers that are considerably longer than the typical lengths (100–250 mm that are achieved by more conventional growth techniques like the Czochralski technique. At a given voltage (several hundred kilovolts in high voltage substation applications longer sensors result in lower electric field strengths and therefore more compact and simpler electric insulation. BGO samples with lengths up to 850 mm and thicknesses from 300 μm to 3 mm were grown. Particular challenges in the growth of BGO fibers are addressed. The relevant optical properties of the fibers are characterized, and the electrooptic response is investigated at voltages up to .

  2. Voltage sensor charge loss accounts for most cases of hypokalemic periodic paralysis.

    Science.gov (United States)

    Matthews, E; Labrum, R; Sweeney, M G; Sud, R; Haworth, A; Chinnery, P F; Meola, G; Schorge, S; Kullmann, D M; Davis, M B; Hanna, M G

    2009-05-05

    Several missense mutations of CACNA1S and SCN4A genes occur in hypokalemic periodic paralysis. These mutations affect arginine residues in the S4 voltage sensors of the channel. Approximately 20% of cases remain genetically undefined. We undertook direct automated DNA sequencing of the S4 regions of CACNA1S and SCN4A in 83 cases of hypokalemic periodic paralysis. We identified reported CACNA1S mutations in 64 cases. In the remaining 19 cases, mutations in SCN4A or other CACNA1S S4 segments were found in 10, including three novel changes and the first mutations in channel domains I (SCN4A) and III (CACNA1S). All mutations affected arginine residues, consistent with the gating pore cation leak hypothesis of hypokalemic periodic paralysis. Arginine mutations in S4 segments underlie 90% of hypokalemic periodic paralysis cases.

  3. A Complex Permittivity Based Sensor for the Electrical Characterization of High-Voltage Transformer Oils

    Directory of Open Access Journals (Sweden)

    Panayota Vassiliou

    2005-05-01

    Full Text Available This work investigates the use of a specially designed cylindrical metal cell, inorder to obtain complex permittivity and tanδ data of highly insulating High Voltage (HVtransformer oil samples. The data are obtained at a wide range of frequencies and operationtemperatures to demonstrate the polarization phenomena and the thermally stimulatedeffects. Such complex permittivity measurements may be utilized as a criterion for theservice life prediction of oil field electrical equipment (OFEE. Therefore, by one set ofmeasurements on a small oil volume, data may be provided on the impending termination,or continuation of the transformer oil service life. The oil incorporating cell, attached to theappropriate measuring units, could be described as a complex permittivity sensor. In thiswork, the acquired dielectric data from a great number of operating distribution networkpower transformers were correlated to corresponding physicochemical ones to demonstratethe future potential employment of the proposed measuring technique.

  4. Electrical trapping mechanism of single-microparticles in a pore sensor

    Science.gov (United States)

    Arima, Akihide; Tsutsui, Makusu; He, Yuhui; Ryuzaki, Sou; Taniguchi, Masateru

    2016-11-01

    Nanopore sensing via resistive pulse technique are utilized as a potent tool to characterize physical and chemical property of single -molecules and -particles. In this article, we studied the influence of particle trajectory to the ionic conductance through a pore. We performed the optical/electrical simultaneous sensing of electrophoretic capture dynamics of single-particles at a pore using a microchannel/nanopore system. We detected ionic current drops synchronous to a fluorescently dyed particle being electrophoretically drawn and become immobilized at a pore in the optical imaging. We also identified anomalous trapping events wherein particles were captured at nanoscale pin-holes formed unintentionally in a SiN membrane that gave rise to relatively small current drops. This method is expected to be a useful platform for testing novel nanopore sensor design wherein current behaves in unpredictable manner.

  5. Leaky sodium channels from voltage sensor mutations in periodic paralysis, but not paramyotonia

    Science.gov (United States)

    Francis, David G.; Rybalchenko, Volodymyr; Struyk, Arie

    2011-01-01

    Background: Hypokalemic periodic paralysis (HypoPP) is associated with mutations in either the CaV1.1 calcium channel or the NaV1.4 sodium channel. Some NaV1.4 HypoPP mutations have been shown to cause an anomalous inward current that may contribute to the attacks of paralysis. Herein, we test whether disease-associated NaV1.4 mutations in previously untested homologous regions of the channel also give rise to the anomalous current. Methods: The functional properties of mutant NaV1.4 channels were studied with voltage-clamp techniques in an oocyte expression system. Results: The HypoPP mutation NaV1.4-R1132Q conducts an anomalous gating pore current, but the homologous R1448C mutation in paramyotonia congenita does not. Conclusions: Gating pore currents arising from missense mutations at arginine residues in the voltage sensor domains of NaV1.4 are a common feature of HypoPP mutant channels and contribute to the attacks of paralysis. PMID:21490317

  6. Analysis of the Light Propagation Model of the Optical Voltage Sensor for Suppressing Unreciprocal Errors

    Science.gov (United States)

    Li, Hui; Fu, Zhida; Liu, Liying; Lin, Zhili; Deng, Wei; Feng, Lishuang

    2017-01-01

    An improved temperature-insensitive optical voltage sensor (OVS) with a reciprocal dual-crystal sensing method is proposed. The inducing principle of OVS reciprocity degradation is expounded by taking the different temperature fields of two crystals and the axis-errors of optical components into consideration. The key parameters pertaining to the system reciprocity degeneration in the dual-crystal sensing unit are investigated in order to optimize the optical sensing model based on the Maxwell's electromagnetic theory. The influencing principle of axis-angle errors on the system nonlinearity in the Pockels phase transfer unit is analyzed. Moreover, a novel axis-angle compensation method is proposed to improve the OVS measurement precision according to the simulation results. The experiment results show that the measurement precision of OVS is superior to ±0.2% in the temperature range from −40 °C to +60 °C, which demonstrates the excellent temperature stability of the designed voltage sensing system. PMID:28054951

  7. Chloride Anions Regulate Kinetics but Not Voltage-Sensor Qmax of the Solute Carrier SLC26a5.

    Science.gov (United States)

    Santos-Sacchi, Joseph; Song, Lei

    2016-06-07

    In general, SLC26 solute carriers serve to transport a variety of anions across biological membranes. However, prestin (SLC26a5) has evolved, now serving as a motor protein in outer hair cells (OHCs) of the mammalian inner ear and is required for cochlear amplification, a mechanical feedback mechanism to boost auditory performance. The mechanical activity of the OHC imparted by prestin is driven by voltage and controlled by anions, chiefly intracellular chloride. Current opinion is that chloride anions control the Boltzmann characteristics of the voltage sensor responsible for prestin activity, including Qmax, the total sensor charge moved within the membrane, and Vh, a measure of prestin's operating voltage range. Here, we show that standard narrow-band, high-frequency admittance measures of nonlinear capacitance (NLC), an alternate representation of the sensor's charge-voltage (Q-V) relationship, is inadequate for assessment of Qmax, an estimate of the sum of unitary charges contributed by all voltage sensors within the membrane. Prestin's slow transition rates and chloride-binding kinetics adversely influence these estimates, contributing to the prevalent concept that intracellular chloride level controls the quantity of sensor charge moved. By monitoring charge movement across frequency, using measures of multifrequency admittance, expanded displacement current integration, and OHC electromotility, we find that chloride influences prestin kinetics, thereby controlling charge magnitude at any particular frequency of interrogation. Importantly, however, this chloride dependence vanishes as frequency decreases, with Qmax asymptoting at a level irrespective of the chloride level. These data indicate that prestin activity is significantly low-pass in the frequency domain, with important implications for cochlear amplification. We also note that the occurrence of voltage-dependent charge movements in other SLC26 family members may be hidden by inadequate

  8. Identifying interacting proteins of a Caenorhabditis elegans voltage-gated chloride channel CLH-1 using GFP-Trap and mass spectrometry.

    Science.gov (United States)

    Zhou, Zi-Liang; Jiang, Jing; Yin, Jiang-An; Cai, Shi-Qing

    2014-06-25

    Chloride channels belong to a superfamily of ion channels that permit passive passage of anions, mainly chloride, across cell membrane. They play a variety of important physiological roles in regulation of cytosolic pH, cell volume homeostasis, organic solute transport, cell migration, cell proliferation, and differentiation. However, little is known about the functional regulation of these channels. In this study, we generated an integrated transgenic worm strain expressing green fluorescence protein (GFP) fused CLC-type chloride channel 1 (CLH-1::GFP), a voltage-gated chloride channel in Caenorhabditis elegans (C. elegans). CLH-1::GFP was expressed in some unidentified head neurons and posterior intestinal cells of C. elegans. Interacting proteins of CLH-1::GFP were purified by GFP-Trap, a novel system for efficient isolation of GFP fusion proteins and their interacting factors. Mass spectrometry (MS) analysis revealed that a total of 27 high probability interacting proteins were co-trapped with CLHp-1::GFP. Biochemical evidence showed that eukaryotic translation elongation factor 1 (EEF-1), one of these co-trapped proteins identified by MS, physically interacted with CLH-1, in consistent with GFP-Trap experiments. Further immunostaining data revealed that the protein level of CLH-1 was significantly increased upon co-expression with EEF-1. These results suggest that the combination of GFP-Trap purification with MS is an excellent tool to identify novel interacting proteins of voltage-gated chloride channels in C. elegans. Our data also show that EEF-1 is a regulator of voltage-gated chloride channel CLH-1.

  9. Laser ultrasonic analysis of normal modes generated by a voltage pulse on an AT quartz sensor.

    Science.gov (United States)

    Goossens, Jozefien; Martinez, Loïc; Glorieux, Christ; Wilkie-Chancellier, Nicolas; Ehssein, Chighali Ould; Serfaty, Stéphane

    2006-12-22

    Laser ultrasonic detection is a versatile and highly sensitive tool for the observation of surface waves. In the following study, laser ultrasonic detection is used for the experimental study of spurious normal vibration modes of a disk quartz sensor excited by a voltage pulse. The AT cut crystal (cut of the crystal relative to the the main crystallographic axis is 35.25 degrees) is optimal for generating mainly thickness-shear vibrations (central frequency 6 MHz) on the quartz surface. However, resulting from shear-to-longitudinal and shear-to-surface mode conversion, and from the weak coupling with the other crystallographic axes, other modes (thickness-compressional and bending modes) are always present in the plate response. Since the laser vibrometer is sensitive to normal displacements, the laser investigation shows waves that can be considered as unwanted for the AT quartz used as a shear sensor. The scanned three dimensional (3D) amplitude-space-time signals are carefully analysed using their representation in three dual Fourier domains (space-time, wave number-frequency). Results on the transient analysis of the waves, the normal bending modes and the dispersion curves are shown.

  10. Cable Crosstalk Suppression with Two-Wire Voltage Feedback Method for Resistive Sensor Array.

    Science.gov (United States)

    Wu, Jianfeng; He, Shangshang; Li, Jianqing; Song, Aiguo

    2016-01-01

    Using a long, flexible test cable connected with a one-wire voltage feedback circuit, a resistive tactile sensor in a shared row-column fashion exhibited flexibility in robotic operations but suffered from crosstalk caused by the connected cable due to its wire resistances and its contacted resistances. Firstly, we designed a new non-scanned driving-electrode (VF-NSDE) circuit using two wires for every row line and every column line to reduce the crosstalk caused by the connected cables in the circuit. Then, an equivalent resistance expression of the element being tested (EBT) for the two-wire VF-NSDE circuit was analytically derived. Following this, the one-wire VF-NSDE circuit and the two-wire VF-NSDE circuit were evaluated by simulation experiments. Finally, positive features of the proposed method were verified with the experiments of a two-wire VF-NSDE prototype circuit. The experiment results show that the two-wire VF-NSDE circuit can greatly reduce the crosstalk error caused by the cables in the 2-D networked resistive sensor array.

  11. PIP2 controls voltage-sensor movement and pore opening of Kv channels through the S4-S5 linker.

    Science.gov (United States)

    Rodriguez-Menchaca, Aldo A; Adney, Scott K; Tang, Qiong-Yao; Meng, Xuan-Yu; Rosenhouse-Dantsker, Avia; Cui, Meng; Logothetis, Diomedes E

    2012-09-04

    Voltage-gated K(+) (Kv) channels couple the movement of a voltage sensor to the channel gate(s) via a helical intracellular region, the S4-S5 linker. A number of studies link voltage sensitivity to interactions of S4 charges with membrane phospholipids in the outer leaflet of the bilayer. Although the phospholipid phosphatidylinositol-4,5-bisphosphate (PIP(2)) in the inner membrane leaflet has emerged as a universal activator of ion channels, no such role has been established for mammalian Kv channels. Here we show that PIP(2) depletion induced two kinetically distinct effects on Kv channels: an increase in voltage sensitivity and a concomitant decrease in current amplitude. These effects are reversible, exhibiting distinct molecular determinants and sensitivities to PIP(2). Gating current measurements revealed that PIP(2) constrains the movement of the sensor through interactions with the S4-S5 linker. Thus, PIP(2) controls both the movement of the voltage sensor and the stability of the open pore through interactions with the linker that connects them.

  12. An LMS Programming Scheme and Floating-Gate Technology Enabled Trimmer-Less and Low Voltage Flame Detection Sensor

    Science.gov (United States)

    Iglesias-Rojas, Juan Carlos; Gomez-Castañeda, Felipe; Moreno-Cadenas, Jose Antonio

    2017-01-01

    In this paper, a Least Mean Square (LMS) programming scheme is used to set the offset voltage of two operational amplifiers that were built using floating-gate transistors, enabling a 0.95 VRMS trimmer-less flame detection sensor. The programming scheme is capable of setting the offset voltage over a wide range of values by means of electron injection. The flame detection sensor consists of two programmable offset operational amplifiers; the first amplifier serves as a 26 μV offset voltage follower, whereas the second amplifier acts as a programmable trimmer-less voltage comparator. Both amplifiers form the proposed sensor, whose principle of functionality is based on the detection of the electrical changes produced by the flame ionization. The experimental results show that it is possible to measure the presence of a flame accurately after programming the amplifiers with a maximum of 35 LMS-algorithm iterations. Current commercial flame detectors are mainly used in absorption refrigerators and large industrial gas heaters, where a high voltage AC source and several mechanical trimmings are used in order to accurately measure the presence of the flame. PMID:28613250

  13. An LMS Programming Scheme and Floating-Gate Technology Enabled Trimmer-Less and Low Voltage Flame Detection Sensor.

    Science.gov (United States)

    Iglesias-Rojas, Juan Carlos; Gomez-Castañeda, Felipe; Moreno-Cadenas, Jose Antonio

    2017-06-14

    In this paper, a Least Mean Square (LMS) programming scheme is used to set the offset voltage of two operational amplifiers that were built using floating-gate transistors, enabling a 0.95 VRMS trimmer-less flame detection sensor. The programming scheme is capable of setting the offset voltage over a wide range of values by means of electron injection. The flame detection sensor consists of two programmable offset operational amplifiers; the first amplifier serves as a 26 μV offset voltage follower, whereas the second amplifier acts as a programmable trimmer-less voltage comparator. Both amplifiers form the proposed sensor, whose principle of functionality is based on the detection of the electrical changes produced by the flame ionization. The experimental results show that it is possible to measure the presence of a flame accurately after programming the amplifiers with a maximum of 35 LMS-algorithm iterations. Current commercial flame detectors are mainly used in absorption refrigerators and large industrial gas heaters, where a high voltage AC source and several mechanical trimmings are used in order to accurately measure the presence of the flame.

  14. Influence of interface traps inside the conduction band on the capacitance–voltage characteristics of InGaAs metal–oxide–semiconductor capacitors

    Science.gov (United States)

    Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Iida, Ryo; Takenaka, Mitsuru; Takagi, Shinichi

    2016-11-01

    We investigated the influences of the AC response with interface/bulk-oxide traps near the conduction band (CB) and a low effective density of states (DOS) on the accumulation capacitance C acc of an n-type InGaAs metal–oxide–semiconductor (MOS) capacitor. We found that the capacitance associated with the interface traps inside the CB significantly increases C acc compared to the C acc value constrained by a low DOS. These results indicate that accurate characterization inside the CB and considering the capacitance due to the interface traps inside the CB in the MOS capacitance–voltage curves are indispensable for accurate characterization of InGaAs MOS interface properties.

  15. Control of a Two-Stage Direct Power Converter with a Single Voltage Sensor Mounted in the Intermediary Circuit

    DEFF Research Database (Denmark)

    Klumpner, Christian; Wheeler, P.; Blaabjerg, Frede

    2004-01-01

    Controlling a converter requires not only a powerful processors but also accurate voltage and current sensors and fast and precise analogue-digital converters, which increase the cost per kW of the assembly, especially in the low power range. A matrix converter requires less transducers than a ba...

  16. Binding of Hanatoxin to the Voltage Sensor of Kv2.1

    Directory of Open Access Journals (Sweden)

    Shin-Ho Chung

    2012-12-01

    Full Text Available Hanatoxin 1 (HaTx1 is a polypeptide toxin isolated from spider venoms. HaTx1 inhibits the voltage-gated potassium channel kv2.1 potently with nanomolar affinities. Its receptor site has been shown to contain the S3b-S4a paddle of the voltage sensor (VS. Here, the binding of HaTx1 to the VSs of human Kv2.1 in the open and resting states are examined using a molecular docking method and molecular dynamics. Molecular docking calculations predict two distinct binding modes for the VS in the resting state. In the two binding modes, the toxin binds the S3b-S4a from S2 and S3 helices, or from S1 and S4 helices. Both modes are found to be stable when embedded in a lipid bilayer. Only the mode in which the toxin binds the S3b-S4a paddle from S2 and S3 helices is consistent with mutagenesis experiments, and considered to be correct. The toxin is then docked to the VS in the open state, and the toxin-VS interactions are found to be less favorable. Computational mutagenesis calculations performed on F278R and E281K mutant VSs show that the mutations may reduce toxin binding affinity by weakening the non-bonded interactions between the toxin and the VS. Overall, our calculations reproduce a wide range of experimental data, and suggest that HaTx1 binds to the S3b-S4a paddle of Kv2.1 from S2 and S3 helices.

  17. Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker

    CERN Document Server

    Adam, W.; Dragicevic, M.; Friedl, M.; Fruehwirth, R.; Hoch, M.; Hrubec, J.; Krammer, M.; Treberspurg, W.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Luyckx, S.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Barria, P.; Caillol, C.; Clerbaux, B.; De Lentdecker, G.; Dobur, D.; Favart, L.; Grebenyuk, A.; Lenzi, Th.; Leonard, A.; Maerschalk, Th.; Mohammadi, A.; Pernie, L.; Randle-Conde, A.; Reis, T.; Seva, T.; Thomas, L.; Vander Velde, C.; Vanlaer, P.; Wang, J.; Zenoni, F.; Zeid, S.Abu; Blekman, F.; De Bruyn, I.; D'Hondt, J.; Daci, N.; Deroover, K.; Heracleous, N.; Keaveney, J.; Lowette, S.; Moreels; Olbrechts, A.; Python, Q.; Tavernier, S.; Van Mulders, P.; Van Onsem, G.; Van Parijs, I.; Strom, D.A.; Basegmez, S.; Bruno, G.; Castello, R.; Caudron, A.; Ceard, L.; De Callatay, B.; Delaere, C.; Pree, T.Du; Forthomme, L.; Giammanco, A.; Hollar, J.; Jez, P.; Michotte, D.; Nuttens, C.; Perrini, L.; Pagano, D.; Quertenmont, L.; Selvaggi, M.; Marono, M.Vidal; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G.H.; Harkonen, J.; Lampen, T.; Luukka, P.R.; Maenpaa, T.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Tuuva, T.; Beaulieu, G.; Boudoul, G.; Combaret, C.; Contardo, D.; Gallbit, G.; Lumb, N.; Mathez, H.; Mirabito, L.; Perries, S.; Sabes, D.; Vander Donckt, M.; Verdier, P.; Viret, S.; Zoccarato, Y.; Agram, J.L.; Conte, E.; Fontaine, J.Ch.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.M.; Chabert, E.; Charles, L.; Goetzmann, Ch.; Gross, L.; Hosselet, J.; Mathieu, C.; Richer, M.; Skovpen, K.; Pistone, C.; Fluegge, G.; Kuensken, A.; Geisler, M.; Pooth, O.; Stahl, A.; Autermann, C.; Edelhoff, M.; Esser, H.; Feld, L.; Karpinski, W.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Raupach, F.; Sammet, J.; Schael, S.; Schwering, G.; Wittmer, B.; Wlochal, M.; Zhukov, V.; Bartosik, N.; Behr, J.; Burgmeier, A.; Calligaris, L.; Dolinska, G.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Fluke, G.; Garcia, J.Garay; Gizhko, A.; Hansen, K.; Harb, A.; Hauk, J.; Kalogeropoulos, A.; Kleinwort, C.; Korol, I.; Lange, W.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Nayak, A.; Ntomari, E.; Perrey, H.; Pitzl, D.; Schroeder, M.; Seitz, C.; Spannagel, S.; Zuber, A.; Biskop, H.; Blobel, V.; Buhmann, P.; Centis-Vignali, M.; Draeger, A.R.; Erfle, J.; Garutti, E.; Haller, J.; Hoffmann, M.; Junkes, A.; Lapsien, T.; Mattig, S.; Matysek, M.; Perieanu, A.; Poehlsen, J.; Poehlsen, T.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Sola, V.; Steinbruck, G.; Wellhausen, J.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Casele, M.; Colombo, F.; Dierlamm, A.; Eber, R.; Freund, B.; Hartmann, F.; Hauth, Th.; Heindl, S.; Hoffmann, K.H.; Husemann, U.; Kornmeyer, A.; Mallows, S.; Muller, Th.; Nuernberg, A.; Printz, M.; Simonis, H.J.; Steck, P.; Weber, M.; Weiler, Th.; Bhardwaj, A.; Kumar, A.; Ranjan, K.; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Sala, G.; Silvestris, L.; Creanza, D.; De Palma, M.; Maggi, G.; My, S.; Selvaggi, G.; Albergo, S.; Cappello, G.; Chiorboli, M.; Costa, S.; Giordano, F.; Di Mattia, A.; Potenza, R.; Saizu, M.A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Civinini, C.; Gallo, E.; Meschini, M.; Paoletti, S.; Sguazzoni, G.; Ciulli, V.; D'Alessandro, R.; Gonzi, S.; Gori, V.; Focardi, E.; Lenzi, P.; Scarlini, E.; Tropiano, A.; Viliani, L.; Ferro, F.; Robutti, E.; Lo Vetere, M.; Gennai, S.; Malvezzi, S.; Menasce, D.; Moroni, L.; Pedrini, D.; Dinardo, M.; Fiorendi, S.; Manzoni, R.A.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Dorigo, T.; Giubilato, P.; Pozzobon, N.; Tosi, M.; Zucchetta, A.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Bilei, G.M.; Bissi, L.; Checcucci, B.; Magalotti, D.; Menichelli, M.; Saha, A.; Servoli, L.; Storchi, L.; Biasini, M.; Conti, E.; Ciangottini, D.; Fano, L.; Lariccia, P.; Mantovani, G.; Passeri, D.; Placidi, P.; Salvatore, M.; Santocchia, A.; Solestizi, L.A.; Spiezia, A.; Androsov, K.; Azzurri, P.; Arezzini, S.; Bagliesi, G.; Basti, A.; Boccali, T.; Bosi, F.; Castaldi, R.; Ciampa, A.; Ciocci, M.A.; Dell'Orso, R.; Fedi, G.; Giassi, A.; Grippo, M.T.; Lomtadze, T.; Magazzu, G.; Mazzoni, E.; Minuti, M.; Moggi, A.; Moon, C.S.; Morsani, F.; Palla, F.; Palmonari, F.; Raffaelli, F.; Savoy-Navarro, A.; Serban, A.T.; Spagnolo, P.; Tenchini, R.; Venturi, A.; Verdini, P.G.; Martini, L.; Messineo, A.; Rizzi, A.; Tonelli, G.; Calzolari, F.; Donato, S.; Fiori, F.; Ligabue, F.; Vernieri, C.; Demaria, N.; Rivetti, A.; Bellan, R.; Casasso, S.; Costa, M.; Covarelli, R.; Migliore, E.; Monteil, E.; Musich, M.; Pacher, L.; Ravera, F.; Romero, A.; Solano, A.; Trapani, P.; Jaramillo Echeverria, R.; Fernandez, M.; Gomez, G.; Moya, D.; F. Gonzalez Sanchez, J.; Munoz Sanchez, F.J.; Vila, I.; Virto, A.L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Breuker, H.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Alfonso, M.; D'Auria, A.; Detraz, S.; De Visscher, S.; Deyrail, D.; Faccio, F.; Felici, D.; Frank, N.; Gill, K.; Giordano, D.; Harris, P.; Honma, A.; Kaplon, J.; Kornmayer, A.; Kottelat, L.; Kovacs, M.; Mannelli, M.; Marchioro, A.; Marconi, S.; Martina, S.; Mersi, S.; Michelis, S.; Moll, M.; Onnela, A.; Pakulski, T.; Pavis, S.; Peisert, A.; Pernot, J.F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Rzonca, M.; Stoye, M.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; Bani, L.; di Calafiori, D.; Casal, B.; Djambazov, L.; Donega, M.; Dunser, M.; Eller, P.; Grab, C.; Hits, D.; Horisberger, U.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Perrozzi, L.; Roeser, U.; Rossini, M.; Starodumov, A.; Takahashi, M.; Wallny, R.; Amsler, C.; Bosiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; De Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Chen, P.H.; Dietz, C.; Grundler, U.; Hou, W.S.; Lu, R.S.; Moya, M.; Wilken, R.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; El Nasr-Storey, S.Seif; Cole, J.; Hobson, P.; Leggat, D.; Reid, I.D.; Teodorescu, L.; Bainbridge, R.; Dauncey, P.; Fulcher, J.; Hall, G.; Magnan, A.M.; Pesaresi, M.; Raymond, D.M.; Uchida, K.; Coughlan, J.A.; Harder, K.; Ilic, J.; Tomalin, I.R.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay; Burt, K.; Ellison, J.; Hanson, G.; Malberti, M.; Olmedo, M.; Cerati, G.; Sharma, V.; Vartak, A.; Yagil, A.; Della Porta, G.Zevi; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; McColl, N.; Mullin, S.; White, D.; Cumalat, J.P.; Ford, W.T.; Gaz, A.; Krohn, M.; Stenson, K.; Wagner, S.R.; Baldin, B.; Bolla, G.; Burkett, K.; Butler, J.; Cheung, H.; Chramowicz, J.; Christian, D.; Cooper, W.E.; Deptuch, G.; Derylo, G.; Gingu, C.; Gruenendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Jung, A.; Joshi, U.; Kahlid, F.; Lei, C.M.; Lipton, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Yin, H.; Adams, M.R.; Berry, D.R.; Evdokimov, A.; Evdokimov, O.; Gerber, C.E.; Hofman, D.J.; Kapustka, B.K.; O'Brien, C.; Sandoval Gonzalez, D.I.; Trauger, H.; Turner, P.; Parashar, N.; Stupak, J.; I.I.I.; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D.H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Benelli, G.; Gray, J.; Majumder, D.; Noonan, D.; Sanders, S.; Stringer, R.; Ivanov, A.; Makouski, M.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Acosta, J.G.; Cremaldi, L.M.; Oliveros, S.; Perera, L.; Summers, D.; Bloom, K.; Bose, S.; Claes, D.R.; Dominguez, A.; Fangmeier, C.; Gonzalez Suarez, R.; Meier, F.; Monroy, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Duggan, D.; Halkiadakis, E.; Lath, A.; Park, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Mendez, H.; Ramirez Vargas, J.E.; Alyari, M.; Dolen, J.; George, J.; Godshalk, A.; Iashvili, I.; Kaisen, J.; Kharchilava, A.; Kumar, A.; Rappoccio, S.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; Kaufman, G.; Mirman, N.; Ryd, A.; Salvati, E.; Skinnari, L.; Thom, J.; Thompson, J.; Tucker, J.; Winstrom, L.; Akgun, B.; Ecklund, K.M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Osipenkov, I.; Perloff, A.; Ulmer, K.A.; Delannoy, A.G.; D'Angelo, P.; Johns, W.

    2016-01-01

    The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \\cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes...

  18. Charge trapping and storage by composite P3HT/PC60BM nanoparticles investigated by fluorescence-voltage/single particle spectroscopy.

    Science.gov (United States)

    Hu, Zhongjian; Gesquiere, Andre J

    2011-12-28

    Fluorescence-voltage/single particle spectroscopy (F-V/SPS) was employed to study exciton-hole polaron interactions and interfacial charge transfer processes for pure poly(3-hexylthiophene) (P3HT) nanoparticles (NPs) and composite P3HT/PC(60)BM NPs in functioning hole-injection devices. F-V/SPS data collected on a particle-by-particle basis reveal an apparent bistability in the fluorescence-voltage modulation curves for composite NPs of P3HT and [6,6]-phenyl-C(61)-butyric acid methyl ester (PC(60)BM) that is absent for pure P3HT NPs. A pronounced deep trapping of free electrons photogenerated from the composite P3HT/PC(60)BM NPs at the NP/dielectric interface and hole trapping by fullerene anions in composite P3HT/PC(60)BM NPs under photoexcitation lies at the basis of this finding. The deep electron trapping effect reported here for composite conjugated polymer/fullerene NPs presents an opportunity for future application of these NPs in nanoscale memory and imaging devices.

  19. Effects of controlling the interface trap densities in InGaZnO thin-film transistors on their threshold voltage shifts

    Science.gov (United States)

    Jeong, S.-W.; Lee, J.-T.; Roh, Y.

    2014-12-01

    In this paper, the threshold voltage stability characteristics of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) are discussed. The IGZO TFTs were found to induce a parallel threshold voltage ( V th ) shift with changing field effect mobility ( μ FE ) or a sub-threshold gate voltage swing ( SS) due to various thermal annealing conditions. The IGZO TFT that was post-annealed in an O2 ambient was found to be more stable for use in oxide-based TFT devices and to have better performance characteristics, such as the on/off current ratio ( I on/off ), SS, and V th , than other TFTs did. The mechanism for improving the V th stability in the post-annealed IGZO TFT is a decrease in the number of trap sites for the electrons and the weak oxygen bonding in the IGZO thin films. The device's performance could be significantly affected by adjusting the annealing conditions. This mechanism is closely related to that of modulation annealing, where the number of localized trapped carriers and defect centers at the interface or in the channel layer are reduced.

  20. Design of a New Built-in UHF Multi-Frequency Antenna Sensor for Partial Discharge Detection in High-Voltage Switchgears

    Directory of Open Access Journals (Sweden)

    Xiaoxing Zhang

    2016-07-01

    Full Text Available In this study a new built-in ultrahigh frequency (UHF antenna sensor was designed and applied in a high-voltage switchgear for partial discharge (PD detection. The casing of the switchgear was initially used as the ground plane of the antenna sensor, which integrated the sensor into the high-voltage switchgear. The Koch snowflake patch was adopted as the radiation patch of the antenna to overcome the disadvantages of common microstrip antennas, and the feed position and the dielectric layer thickness were simulated in detail. Simulation results show that the antenna sensor possessed four resonant points with good impedance matching from 300 MHz to 1000 MHz, and it also presented good multi-frequency performance in the entire working frequency band. PD detection experiments were conducted in the high-voltage switchgear, and the fabricated antenna sensor was effectively built into the high-voltage switchgear. In order to reflect the advantages of the built-in antenna sensor, another external UHF antenna sensor was used as a comparison to simultaneously detect PD. Experimental results demonstrated that the built-in antenna sensor possessed high detection sensitivity and strong anti-interference capacity, which ensured the practicability of the design. In addition, it had more high-voltage switchgear PD detection advantages than the external sensor.

  1. Design of a New Built-in UHF Multi-Frequency Antenna Sensor for Partial Discharge Detection in High-Voltage Switchgears.

    Science.gov (United States)

    Zhang, Xiaoxing; Cheng, Zheng; Gui, Yingang

    2016-07-26

    In this study a new built-in ultrahigh frequency (UHF) antenna sensor was designed and applied in a high-voltage switchgear for partial discharge (PD) detection. The casing of the switchgear was initially used as the ground plane of the antenna sensor, which integrated the sensor into the high-voltage switchgear. The Koch snowflake patch was adopted as the radiation patch of the antenna to overcome the disadvantages of common microstrip antennas, and the feed position and the dielectric layer thickness were simulated in detail. Simulation results show that the antenna sensor possessed four resonant points with good impedance matching from 300 MHz to 1000 MHz, and it also presented good multi-frequency performance in the entire working frequency band. PD detection experiments were conducted in the high-voltage switchgear, and the fabricated antenna sensor was effectively built into the high-voltage switchgear. In order to reflect the advantages of the built-in antenna sensor, another external UHF antenna sensor was used as a comparison to simultaneously detect PD. Experimental results demonstrated that the built-in antenna sensor possessed high detection sensitivity and strong anti-interference capacity, which ensured the practicability of the design. In addition, it had more high-voltage switchgear PD detection advantages than the external sensor.

  2. Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation

    Science.gov (United States)

    Xu, Hao; Yang, Hong; Wang, Yan-Rong; Wang, Wen-Wu; Luo, Wei-Chun; Qi, Lu-Wei; Li, Jun-Feng; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

    2016-08-01

    High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes. The reliability of thin dielectric films becomes a limitation to device manufacturing, especially to the breakdown characteristic. In this work, a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up, and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation. It is found that all degradation factors, such as trap generation rate time exponent m, Weibull slope β and percolation factor s, each could be expressed as a function of trap density time exponent α. Based on the percolation relation and power law lifetime projection, a temperature related trap generation model is proposed. The validity of this model is confirmed by comparing with experiment results. For other device and material conditions, the percolation relation provides a new way to study the relationship between trap generation and lifetime projection. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

  3. Enhanced low current, voltage, and power dissipation measurements via Arduino Uno microcontroller with modified commercially available sensors

    Science.gov (United States)

    Tanner, Meghan; Eckel, Ryan; Senevirathne, Indrajith

    The versatility, simplicity, and robustness of Arduino microcontroller architecture have won a huge following with increasingly serious engineering and physical science applications. Arduino microcontroller environment coupled with commercially available sensors have been used to systematically measure, record, and analyze low currents, low voltages and corresponding dissipated power for assessing secondary physical properties in a diverse array of engineering systems. Setup was assembled via breadboard, wire, and simple soldering with an Arduino Uno with ATmega328P microcontroller connected to a PC. The microcontroller was programmed with Arduino Software while the bootloader was used to upload the code. Commercial Hall effect current sensor modules ACS712 and INA169 current shunt monitor was used to measure corresponding low to ultra-low currents and voltages. Stable measurement data was obtained via sensors and compared with corresponding oscilloscope measurements to assess reliability and uncertainty. Sensor breakout boards were modified to enhance the sensitivity of the measurements and to expand the applicability. Discussion of these measurements will focus on capabilities, capacities and limitations of the systems with examples of possible applications. Lock Haven Nanotechnology Program.

  4. A Tracker for the Mu3e Experiment based on High-Voltage Monolithic Active Pixel Sensors

    CERN Document Server

    Berger, Niklaus; Bachmann, Sebastian; Kiehn, Moritz; Perić, Ivan; Perrevoort, Ann-Kathrin; Philipp, Raphael; Schöning, André; Stumpf, Kevin; Wiedner, Dirk; Windelband, Bernd; Zimmermann, Marco

    2013-01-01

    The Mu3e experiment searches for the lepton flavour violating decay mu+ -> e+e-e+, aiming for a branching fraction sensitivity of 10^-16. This requires an excellent momentum resolution for low energy electrons, high rate capability and a large acceptance. In order to minimize multiple scattering, the amount of material has to be as small as possible. These challenges can be met with a tracker built from high-voltage monolithic active pixel sensors (HV-MAPS), which can be thinned to 50 um and which incorporate the complete read-out electronics on the sensor chip. To further minimise material, the sensors are supported by a mechanical structure built from 25 um thick Kapton foil and cooled with gaseous helium.

  5. A tracker for the Mu3e experiment based on high-voltage monolithic active pixel sensors

    Energy Technology Data Exchange (ETDEWEB)

    Berger, Niklaus, E-mail: nberger@physi.uni-heidelberg.de [Physikalisches Institut, Heidelberg University, Heidelberg (Germany); Augustin, Heiko; Bachmann, Sebastian; Kiehn, Moritz [Physikalisches Institut, Heidelberg University, Heidelberg (Germany); Perić, Ivan [Zentralinstitut für technische Informatik, Heidelberg University, Mannheim (Germany); Perrevoort, Ann-Kathrin; Philipp, Raphael; Schöning, André; Stumpf, Kevin; Wiedner, Dirk; Windelband, Bernd; Zimmermann, Marco [Physikalisches Institut, Heidelberg University, Heidelberg (Germany)

    2013-12-21

    The Mu3e experiment searches for the lepton flavour violating decay μ{sup +}→e{sup +}e{sup −}e{sup +}, aiming for a branching fraction sensitivity of 10{sup −16}. This requires an excellent momentum resolution for low energy electrons, high rate capability and a large acceptance. In order to minimise multiple scattering, the amount of material has to be as small as possible. These challenges can be met with a tracker built from high-voltage monolithic active pixel sensors (HV-MAPS), which can be thinned to 50μm and which incorporate the complete read-out electronics on the sensor chip. To further minimise material, the sensors are supported by a mechanical structure built from 25μm thick Kapton foil and cooled with gaseous helium.

  6. Mapping the Interaction Site for a β-Scorpion Toxin in the Pore Module of Domain III of Voltage-gated Na+ Channels*

    Science.gov (United States)

    Zhang, Joel Z.; Yarov-Yarovoy, Vladimir; Scheuer, Todd; Karbat, Izhar; Cohen, Lior; Gordon, Dalia; Gurevitz, Michael; Catterall, William A.

    2012-01-01

    Activation of voltage-gated sodium (Nav) channels initiates and propagates action potentials in electrically excitable cells. β-Scorpion toxins, including toxin IV from Centruroides suffusus suffusus (CssIV), enhance activation of NaV channels. CssIV stabilizes the voltage sensor in domain II in its activated state via a voltage-sensor trapping mechanism. Amino acid residues required for the action of CssIV have been identified in the S1-S2 and S3-S4 extracellular loops of domain II. The extracellular loops of domain III are also involved in toxin action, but individual amino acid residues have not been identified. We used site-directed mutagenesis and voltage clamp recording to investigate amino acid residues of domain III that are involved in CssIV action. In the IIISS2-S6 loop, five substitutions at four positions altered voltage-sensor trapping by CssIVE15A. Three substitutions (E1438A, D1445A, and D1445Y) markedly decreased voltage-sensor trapping, whereas the other two substitutions (N1436G and L1439A) increased voltage-sensor trapping. These bidirectional effects suggest that residues in IIISS2-S6 make both positive and negative interactions with CssIV. N1436G enhanced voltage-sensor trapping via increased binding affinity to the resting state, whereas L1439A increased voltage-sensor trapping efficacy. Based on these results, a three-dimensional model of the toxin-channel interaction was developed using the Rosetta modeling method. These data provide additional molecular insight into the voltage-sensor trapping mechanism of toxin action and define a three-point interaction site for β-scorpion toxins on NaV channels. Binding of α- and β-scorpion toxins to two distinct, pseudo-symmetrically organized receptor sites on NaV channels acts synergistically to modify channel gating and paralyze prey. PMID:22761417

  7. Mapping the interaction site for a β-scorpion toxin in the pore module of domain III of voltage-gated Na(+) channels.

    Science.gov (United States)

    Zhang, Joel Z; Yarov-Yarovoy, Vladimir; Scheuer, Todd; Karbat, Izhar; Cohen, Lior; Gordon, Dalia; Gurevitz, Michael; Catterall, William A

    2012-08-31

    Activation of voltage-gated sodium (Na(v)) channels initiates and propagates action potentials in electrically excitable cells. β-Scorpion toxins, including toxin IV from Centruroides suffusus suffusus (CssIV), enhance activation of Na(V) channels. CssIV stabilizes the voltage sensor in domain II in its activated state via a voltage-sensor trapping mechanism. Amino acid residues required for the action of CssIV have been identified in the S1-S2 and S3-S4 extracellular loops of domain II. The extracellular loops of domain III are also involved in toxin action, but individual amino acid residues have not been identified. We used site-directed mutagenesis and voltage clamp recording to investigate amino acid residues of domain III that are involved in CssIV action. In the IIISS2-S6 loop, five substitutions at four positions altered voltage-sensor trapping by CssIV(E15A). Three substitutions (E1438A, D1445A, and D1445Y) markedly decreased voltage-sensor trapping, whereas the other two substitutions (N1436G and L1439A) increased voltage-sensor trapping. These bidirectional effects suggest that residues in IIISS2-S6 make both positive and negative interactions with CssIV. N1436G enhanced voltage-sensor trapping via increased binding affinity to the resting state, whereas L1439A increased voltage-sensor trapping efficacy. Based on these results, a three-dimensional model of the toxin-channel interaction was developed using the Rosetta modeling method. These data provide additional molecular insight into the voltage-sensor trapping mechanism of toxin action and define a three-point interaction site for β-scorpion toxins on Na(V) channels. Binding of α- and β-scorpion toxins to two distinct, pseudo-symmetrically organized receptor sites on Na(V) channels acts synergistically to modify channel gating and paralyze prey.

  8. Direct evidence that scorpion α-toxins (site-3 modulate sodium channel inactivation by hindrance of voltage-sensor movements.

    Directory of Open Access Journals (Sweden)

    Zhongming Ma

    Full Text Available The position of the voltage-sensing transmembrane segment, S4, in voltage-gated ion channels as a function of voltage remains incompletely elucidated. Site-3 toxins bind primarily to the extracellular loops connecting transmembrane helical segments S1-S2 and S3-S4 in Domain 4 (D4 and S5-S6 in Domain 1 (D1 and slow fast-inactivation of voltage-gated sodium channels. As S4 of the human skeletal muscle voltage-gated sodium channel, hNav1.4, moves in response to depolarization from the resting to the inactivated state, two D4S4 reporters (R2C and R3C, Arg1451Cys and Arg1454Cys, respectively move from internal to external positions as deduced by reactivity to internally or externally applied sulfhydryl group reagents, methane thiosulfonates (MTS. The changes in reporter reactivity, when cycling rapidly between hyperpolarized and depolarized voltages, enabled determination of the positions of the D4 voltage-sensor and of its rate of movement. Scorpion α-toxin binding impedes D4S4 segment movement during inactivation since the modification rates of R3C in hNav1.4 with methanethiosulfonate (CH3SO2SCH2CH2R, where R = -N(CH33 (+ trimethylammonium, MTSET and benzophenone-4-carboxamidocysteine methanethiosulfonate (BPMTS were slowed ~10-fold in toxin-modified channels. Based upon the different size, hydrophobicity and charge of the two reagents it is unlikely that the change in reactivity is due to direct or indirect blockage of access of this site to reagent in the presence of toxin (Tx, but rather is the result of inability of this segment to move outward to the normal extent and at the normal rate in the toxin-modified channel. Measurements of availability of R3C to internally applied reagent show decreased access (slower rates of thiol reaction providing further evidence for encumbered D4S4 movement in the presence of toxins consistent with the assignment of at least part of the toxin binding site to the region of D4S4 region of the voltage-sensor

  9. Influence of Ambient Humidity on the Voltage Response of Ionic Polymer-Metal Composite Sensor.

    Science.gov (United States)

    Zhu, Zicai; Horiuchi, Tetsuya; Kruusamäe, Karl; Chang, Longfei; Asaka, Kinji

    2016-03-31

    Electrical potential based on ion migration exists not only in natural systems but also in ionic polymer materials. In order to investigate the influence of ambient humidity on voltage response, classical Au-Nafion IPMC was chosen as the reference sample. Voltage response under a bending deformation was measured in two ways: first, continuous measurement of voltage response in the process of absorption and desorption of water to study the tendency of voltage variation at all water states; second, measurements at multiple fixed ambient humidity levels to characterize the process of voltage response quantitatively. Ambient humidity influences the voltage response mainly by varying water content in ionic polymer. Under a step bending, the amplitude of initial voltage peak first increases and then decreases as the ambient humidity and the inherent water content decrease. This tendency is explained semiquantitatively by mass storage capacity related to the stretchable state of the Nafion polymer network. Following the initial peak, the voltage shows a slow decay to a steady state, which is first characterized in this paper. The relative voltage decay during the steady state always decreases as the ambient humidity is lowered. It is ascribed to progressive increase of the ratio between the water molecules in the cation hydration shell to the free water. Under sinusoidal mechanical bending excitation in the range of 0.1-10 Hz, the voltage magnitude increases with frequency at high ambient humidity but decreases with frequency at low ambient humidity. The relationship is mainly controlled by the voltage decay effect and the response speed.

  10. Low-Voltage 96 dB Snapshot CMOS Image Sensor with 4.5 nW Power Dissipation per Pixel

    Directory of Open Access Journals (Sweden)

    Orly Yadid-Pecht

    2012-07-01

    Full Text Available Modern “smart” CMOS sensors have penetrated into various applications, such as surveillance systems, bio-medical applications, digital cameras, cellular phones and many others. Reducing the power of these sensors continuously challenges designers. In this paper, a low power global shutter CMOS image sensor with Wide Dynamic Range (WDR ability is presented. This sensor features several power reduction techniques, including a dual voltage supply, a selective power down, transistors with different threshold voltages, a non-rationed logic, and a low voltage static memory. A combination of all these approaches has enabled the design of the low voltage “smart” image sensor, which is capable of reaching a remarkable dynamic range, while consuming very low power. The proposed power-saving solutions have allowed the maintenance of the standard architecture of the sensor, reducing both the time and the cost of the design. In order to maintain the image quality, a relation between the sensor performance and power has been analyzed and a mathematical model, describing the sensor Signal to Noise Ratio (SNR and Dynamic Range (DR as a function of the power supplies, is proposed. The described sensor was implemented in a 0.18 um CMOS process and successfully tested in the laboratory. An SNR of 48 dB and DR of 96 dB were achieved with a power dissipation of 4.5 nW per pixel.

  11. Low-voltage 96 dB snapshot CMOS image sensor with 4.5 nW power dissipation per pixel.

    Science.gov (United States)

    Spivak, Arthur; Teman, Adam; Belenky, Alexander; Yadid-Pecht, Orly; Fish, Alexander

    2012-01-01

    Modern "smart" CMOS sensors have penetrated into various applications, such as surveillance systems, bio-medical applications, digital cameras, cellular phones and many others. Reducing the power of these sensors continuously challenges designers. In this paper, a low power global shutter CMOS image sensor with Wide Dynamic Range (WDR) ability is presented. This sensor features several power reduction techniques, including a dual voltage supply, a selective power down, transistors with different threshold voltages, a non-rationed logic, and a low voltage static memory. A combination of all these approaches has enabled the design of the low voltage "smart" image sensor, which is capable of reaching a remarkable dynamic range, while consuming very low power. The proposed power-saving solutions have allowed the maintenance of the standard architecture of the sensor, reducing both the time and the cost of the design. In order to maintain the image quality, a relation between the sensor performance and power has been analyzed and a mathematical model, describing the sensor Signal to Noise Ratio (SNR) and Dynamic Range (DR) as a function of the power supplies, is proposed. The described sensor was implemented in a 0.18 um CMOS process and successfully tested in the laboratory. An SNR of 48 dB and DR of 96 dB were achieved with a power dissipation of 4.5 nW per pixel.

  12. Controlled trapping and detection of magnetic particles by a magnetic microactuator and a giant magnetoresistance (GMR) sensor

    KAUST Repository

    Giouroudi, Ioanna

    2014-04-01

    This paper presents the design and testing of an integrated micro-chip for the controlled trapping and detection of magnetic particles (MPs). A unique magnetic micro-actuator consisting of square-shaped conductors is used to manipulate the MPs towards a giant magnetoresistance (GMR) sensing element which rapidly detects the majority of MPs trapped around the square-shaped conductors. The ability to precisely transport a small number of MPs in a controlled manner over long distances by magnetic forces enables the rapid concentration of a majority of MPs to the sensing zone for detection. This is especially important in low concentration samples. The conductors are designed in such a manner so as to increase the capture efficiency as well as the precision and speed of transportation. By switching current to different conductors, MPs can be manipulated and immobilized on the innermost conductor where the GMR sensor is located. This technique rapidly guides the MPs towards the sensing zone. Secondly, for optimum measurement capability with high spatial resolution the GMR sensor is fabricated directly underneath and all along the innermost conductor to detect the stray fields originating from the MPs. Finally, a microfluidic channel is fabricated on top of this micro-chip. Experiments inside the microchannel were carried out and the MPs were successfully trapped at the sensing area. © (2014) Trans Tech Publications.

  13. A distinct sodium channel voltage-sensor locus determines insect selectivity of the spider toxin Dc1a

    Science.gov (United States)

    Bende, Niraj S.; Dziemborowicz, Sławomir; Mobli, Mehdi; Herzig, Volker; Gilchrist, John; Wagner, Jordan; Nicholson, Graham M.; King, Glenn F.; Bosmans, Frank

    2014-07-01

    β-Diguetoxin-Dc1a (Dc1a) is a toxin from the desert bush spider Diguetia canities that incapacitates insects at concentrations that are non-toxic to mammals. Dc1a promotes opening of German cockroach voltage-gated sodium (Nav) channels (BgNav1), whereas human Nav channels are insensitive. Here, by transplanting commonly targeted S3b-S4 paddle motifs within BgNav1 voltage sensors into Kv2.1, we find that Dc1a interacts with the domain II voltage sensor. In contrast, Dc1a has little effect on sodium currents mediated by PaNav1 channels from the American cockroach even though their domain II paddle motifs are identical. When exploring regions responsible for PaNav1 resistance to Dc1a, we identified two residues within the BgNav1 domain II S1-S2 loop that when mutated to their PaNav1 counterparts drastically reduce toxin susceptibility. Overall, our results reveal a distinct region within insect Nav channels that helps determine Dc1a sensitivity, a concept that will be valuable for the design of insect-selective insecticides.

  14. Combinatorial mutagenesis of the voltage-sensing domain enables the optical resolution of action potentials firing at 60 Hz by a genetically encoded fluorescent sensor of membrane potential.

    Science.gov (United States)

    Piao, Hong Hua; Rajakumar, Dhanarajan; Kang, Bok Eum; Kim, Eun Ha; Baker, Bradley J

    2015-01-07

    ArcLight is a genetically encoded fluorescent voltage sensor using the voltage-sensing domain of the voltage-sensing phosphatase from Ciona intestinalis that gives a large but slow-responding optical signal in response to changes in membrane potential (Jin et al., 2012). Fluorescent voltage sensors using the voltage-sensing domain from other species give faster yet weaker optical signals (Baker et al., 2012; Han et al., 2013). Sequence alignment of voltage-sensing phosphatases from different species revealed conserved polar and charged residues at 7 aa intervals in the S1-S3 transmembrane segments of the voltage-sensing domain, suggesting potential coil-coil interactions. The contribution of these residues to the voltage-induced optical signal was tested using a cassette mutagenesis screen by flanking each transmembrane segment with unique restriction sites to allow for the testing of individual mutations in each transmembrane segment, as well as combinations in all four transmembrane segments. Addition of a counter charge in S2 improved the kinetics of the optical response. A double mutation in the S4 domain dramatically reduced the slow component of the optical signal seen in ArcLight. Combining that double S4 mutant with the mutation in the S2 domain yielded a probe with kinetics voltage-sensing domain could potentially lead to fluorescent sensors capable of optically resolving neuronal inhibition and subthreshold synaptic activity.

  15. The piezoelectronic stress transduction switch for very large-scale integration, low voltage sensor computation, and radio frequency applications

    Science.gov (United States)

    Magdǎu, I.-B.; Liu, X.-H.; Kuroda, M. A.; Shaw, T. M.; Crain, J.; Solomon, P. M.; Newns, D. M.; Martyna, G. J.

    2015-08-01

    The piezoelectronic transduction switch is a device with potential as a post-CMOS transistor due to its predicted multi-GHz, low voltage performance on the VLSI-scale. However, the operating principle of the switch has wider applicability. We use theory and simulation to optimize the device across a wide range of length scales and application spaces and to understand the physics underlying its behavior. We show that the four-terminal VLSI-scale switch can operate at a line voltage of 115 mV while as a low voltage-large area device, ≈200 mV operation at clock speeds of ≈2 GHz can be achieved with a desirable 104 On/Off ratio—ideal for on-board computing in sensors. At yet larger scales, the device is predicted to operate as a fast (≈250 ps) radio frequency (RF) switch exhibiting high cyclability, low On resistance and low Off capacitance, resulting in a robust switch with a RF figure of merit of ≈4 fs. These performance benchmarks cannot be approached with CMOS which has reached fundamental limits. In detail, a combination of finite element modeling and ab initio calculations enables prediction of switching voltages for a given design. A multivariate search method then establishes a set of physics-based design rules, discovering the key factors for each application. The results demonstrate that the piezoelectronic transduction switch can offer fast, low power applications spanning several domains of the information technology infrastructure.

  16. Analysis of a three-part 230 kV optical voltage transducer with multiple electric field sensors

    Energy Technology Data Exchange (ETDEWEB)

    Namedanian, M.; Mozafari, M.; Razavi, S. [Niroo Research Inst., Tehran (Iran, Islamic Republic of). Dept. of Electronics, Control and Instrumentation

    2008-07-01

    A 3-part optical voltage transducer (OVT) was used as a replacement for conventional inductive and capacitive transformers. A quadrature method was used to position the sensors. The OVT was designed using a finite element simulation program with a particle swarm optimization (PSO) algorithm. Each section of the 3-part insulator consisted of a fiberglass tube with silicon rubber shedding. A corona ring was positioned around the top of the insulator. The simulations were conducted to demonstrate various perturbation scenarios and examine the potential distorted behaviour of the electric field. Ratio errors and voltage differences occurring from the various perturbations were calculated in order to determine the optimal positions and weights of the OVT. Results of the study indicated that the OVT will meet all standard requirements and be cheaper and easier to implement than conventional capacitive or inductive transformers. 8 refs., 3 tabs., 5 figs.

  17. Rapid Cellular Phenotyping of Human Pluripotent Stem Cell-Derived Cardiomyocytes using a Genetically Encoded Fluorescent Voltage Sensor

    Directory of Open Access Journals (Sweden)

    Jordan S. Leyton-Mange

    2014-02-01

    Full Text Available In addition to their promise in regenerative medicine, pluripotent stem cells have proved to be faithful models of many human diseases. In particular, patient-specific stem cell-derived cardiomyocytes recapitulate key features of several life-threatening cardiac arrhythmia syndromes. For both modeling and regenerative approaches, phenotyping of stem cell-derived tissues is critical. Cellular phenotyping has largely relied upon expression of lineage markers rather than physiologic attributes. This is especially true for cardiomyocytes, in part because electrophysiological recordings are labor intensive. Likewise, most optical voltage indicators suffer from phototoxicity, which damages cells and degrades signal quality. Here we present the use of a genetically encoded fluorescent voltage indicator, ArcLight, which we demonstrate can faithfully report transmembrane potentials in human stem cell-derived cardiomyocytes. We demonstrate the application of this fluorescent sensor in high-throughput, serial phenotyping of differentiating cardiomyocyte populations and in screening for drug-induced cardiotoxicity.

  18. Optimal Geometry of CMOS Voltage-Mode and Current-Mode Vertical Magnetic Hall Sensors

    OpenAIRE

    2015-01-01

    Four different geometries of a vertical Hall sensor\\ud are presented and studied in this paper. The current spinning\\ud technique compensates for the offset and the sensors, driven in\\ud current-mode, provide a differential signal current for a possible\\ud capacitive integration over a defined time-slot. The sensors have\\ud been fabricated using a 6-metal 0.18-μm CMOS technology and\\ud fully experimentally tested. The optimal solution will be further\\ud investigated for bendable electronics. ...

  19. Dual phase TiO(x)N(y)/TiN charge trapping layer for low-voltage and high-speed flash memory application.

    Science.gov (United States)

    Zhang, Gang; Yoo, Won Jong

    2009-12-01

    Flash memory using a dual phase TiO(x)N(y)/TiN charge trapping layer has been fabricated and its electrical properties were investigated. The TiO(x)N(y)/TiN layer was formed by partial oxidation of a pre-deposited TiN layer, and the formation of TiO(x)N(y)/SiO(x)N(y) was confirmed by high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) analyses. The enlarged conduction (deltaphi(c) = 3.6 eV) and valence (deltaphi(v) = 2.5 eV) band offsets of the TiO(x)N(y)/TiN to SiO2 enabled low-voltage (+/- 6 V) and fast programming/erasing (P: 2.7 x 10(4) V/s and E: -5.1 x 10(4) V/s) operations, while the transition layer suppressed the trapped charge leakage, giving rise to good 10-year data retention with less than 35% V(th) decay.

  20. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

    Science.gov (United States)

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-05-09

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

  1. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

    Science.gov (United States)

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-05-01

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V‑1 sec‑1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

  2. Coupling between residues on S4 and S1 defines the voltage-sensor resting conformation in NaChBac.

    Science.gov (United States)

    Paldi, Tzur; Gurevitz, Michael

    2010-07-21

    The voltage sensor is a four-transmembrane helix bundle (S1-S4) that couples changes in membrane potential to conformational alterations in voltage-gated ion channels leading to pore opening and ion conductance. Although the structure of the voltage sensor in activated potassium channels is available, the conformation of the voltage sensor at rest is still obscure, limiting our understanding of the voltage-sensing mechanism. By employing a heterologously expressed Bacillus halodurans sodium channel (NaChBac), we defined constraints that affect the positioning and depolarization-induced outward motion of the S4 segment. We compared macroscopic currents mediated by NaChBac and mutants in which E43 on the S1 segment and the two outermost arginines (R1 and R2) on S4 were substituted. Neutralization of the negatively charged E43 (E43C) had a significant effect on channel gating. A double-mutant cycle analysis of E43 and R1 or R2 suggested changes in pairing during channel activation, implying that the interaction of E43 with R1 stabilizes the voltage sensor in its closed/available state, whereas interaction of E43 with R2 stabilizes the channel open/unavailable state. These constraints on S4 dynamics that define its stepwise movement upon channel activation and positioning at rest are novel, to the best of our knowledge, and compatible with the helical-screw and electrostatic models of S4 motion.

  3. Ultra-low power sensor for autonomous non-invasive voltage measurement in IoT solutions for energy efficiency

    Science.gov (United States)

    Villani, Clemente; Balsamo, Domenico; Brunelli, Davide; Benini, Luca

    2015-05-01

    Monitoring current and voltage waveforms is fundamental to assess the power consumption of a system and to improve its energy efficiency. In this paper we present a smart meter for power consumption which does not need any electrical contact with the load or its conductors, and which can measure both current and voltage. Power metering becomes easier and safer and it is also self-sustainable because an energy harvesting module based on inductive coupling powers the entire device from the output of the current sensor. A low cost 32-bit wireless CPU architecture is used for data filtering and processing, while a wireless transceiver sends data via the IEEE 802.15.4 standard. We describe in detail the innovative contact-less voltage measurement system, which is based on capacitive coupling and on an algorithm that exploits two pre-processing channels. The system self-calibrates to perform precise measurements regardless the cable type. Experimental results demonstrate accuracy in comparison with commercial high-cost instruments, showing negligible deviations.

  4. The free energy barrier for arginine gating charge translation is altered by mutations in the voltage sensor domain.

    Directory of Open Access Journals (Sweden)

    Christine S Schwaiger

    Full Text Available The gating of voltage-gated ion channels is controlled by the arginine-rich S4 helix of the voltage-sensor domain moving in response to an external potential. Recent studies have suggested that S4 moves in three to four steps to open the conducting pore, thus visiting several intermediate conformations during gating. However, the exact conformational changes are not known in detail. For instance, it has been suggested that there is a local rotation in the helix corresponding to short segments of a 3(10-helix moving along S4 during opening and closing. Here, we have explored the energetics of the transition between the fully open state (based on the X-ray structure and the first intermediate state towards channel closing (C1, modeled from experimental constraints. We show that conformations within 3 Å of the X-ray structure are obtained in simulations starting from the C1 model, and directly observe the previously suggested sliding 3(10-helix region in S4. Through systematic free energy calculations, we show that the C1 state is a stable intermediate conformation and determine free energy profiles for moving between the states without constraints. Mutations indicate several residues in a narrow hydrophobic band in the voltage sensor contribute to the barrier between the open and C1 states, with F233 in the S2 helix having the largest influence. Substitution for smaller amino acids reduces the transition cost, while introduction of a larger ring increases it, largely confirming experimental activation shift results. There is a systematic correlation between the local aromatic ring rotation, the arginine barrier crossing, and the corresponding relative free energy. In particular, it appears to be more advantageous for the F233 side chain to rotate towards the extracellular side when arginines cross the hydrophobic region.

  5. Spatial refractive index sensor using whispering gallery modes in an optically trapped microsphere

    NARCIS (Netherlands)

    Zijlstra, P.; Zijlstra, Peter; van der Molen, K.L.; Mosk, Allard

    2007-01-01

    The authors propose the use of an optically trapped, dye doped polystyrene microsphere for spatial probing of the refractive index at any position in a fluid. Using the dye embedded in the microsphere as an internal broadband excitation source the authors eliminated the need for a tunable excitation

  6. Assessment of analyte trapping in paper matrices and its effect on sensor performance

    CSIR Research Space (South Africa)

    Govindasamy, K

    2014-11-01

    Full Text Available by labelling the bacteria both colorimetrically and fluorescently. For colorimetric analysis, bacteria were stained red. RGB colour profiling was then used to identify bacteria entrapment along the LFT. Fluorescent imaging was used to assess E.coli trapping...

  7. Spatial refractive index sensor using whispering gallery modes in an optically trapped microsphere

    NARCIS (Netherlands)

    Zijlstra, Peter; Molen, van der Karen L.; Mosk, Allard P.

    2007-01-01

    The authors propose the use of an optically trapped, dye doped polystyrene microsphere for spatial probing of the refractive index at any position in a fluid. Using the dye embedded in the microsphere as an internal broadband excitation source the authors eliminated the need for a tunable excitation

  8. Applications of passive remote surface acoustic wave sensors in high-voltage systems; Einsatz von passiven funkabfragbaren Oberflaechenwellensensoren in der elektrischen Energietechnik

    Energy Technology Data Exchange (ETDEWEB)

    Teminova, R.

    2007-06-29

    Passive remote Surface Acoustic Wave (SAW) sensors have been applied e.g. as temperature, pressure or torque sensors. Their important advantages over standard methods are their passive operating principle, which allows operation without any power supply, as well as the wireless high-frequency signal transmission over distances up to about 10..15 m even through (non metallic) housings. These properties of SAW sensors particularly qualify them for applications in high voltage operational equipment. First experience was gained in a long time field test of surge arrester monitoring based on SAW temperature sensors in a German high-voltage substation. Now, this system has been further developed at Darmstadt University of Technology for other applications, the first of them being an overhead line (OHL) conductor temperature measurement, the second one a temperature monitoring system for of high-voltage disconnectors. After designing and building the sensors, extensive laboratory tests were carried out applying high-voltage, high-current and thermal stress in order to approve the suitability for the intended application. All these tests confirmed the assumption that SAW sensors, due to their passive working principle, are not affected at all by any kind of electrical, magnetic or thermal stress that may occur during service. The complete temperature sensor consists of three parts: a sensor chip, an antenna which receives and transmits the signal from and to the radar unit and a body for installation and for protection against environmental impact. One must find a good compromise between optimizing of thermal, dielectric and high-frequency characteristics and at the same time taking into consideration a simple installation. These requirements on the SAW sensors turned out to be difficult to coordinate. To achieve a high measuring precision is especially difficult. First, a new sensor for OHL application was developed. The OHL conductor temperature sensor had been optimized

  9. Selective microwave sensors exploiting the interaction of analytes with trap states in TiO2 nanotube arrays

    Science.gov (United States)

    Zarifi, M. H.; Farsinezhad, S.; Abdolrazzaghi, M.; Daneshmand, M.; Shankar, K.

    2016-03-01

    Sensing of molecular analytes by probing the effects of their interaction with microwaves is emerging as a cheap, compact, label-free and highly sensitive detection and quantification technique. Microstrip ring-type resonators are particularly favored for this purpose due to their planar sensing geometry, electromagnetic field enhancements in the coupling gap and compatibility with established printed circuit board manufacturing. However, the lack of selectivity in what is essentially a permittivity-sensing method is an impediment to wider adoption and implementation of this sensing platform. By placing a polycrystalline anatase-phase TiO2 nanotube membrane in the coupling gap of a microwave resonator, we engineer selectivity for the detection and differentiation of methanol, ethanol and 2-propanol. The scavenging of reactive trapped holes by aliphatic alcohols adsorbed on TiO2 is responsible for the alcohol-specific detection while the different short chain alcohols are distinguished on the basis of differences in their microwave response. Electrodeless microwave sensors which allow spectral and time-dependent monitoring of the resonance frequency and quality factor provide a wealth of information in comparison with electrode-based resistive sensors for the detection of volatile organic compounds. A high dynamic range (400 ppm-10 000 ppm) is demonstrated for methanol detection.Sensing of molecular analytes by probing the effects of their interaction with microwaves is emerging as a cheap, compact, label-free and highly sensitive detection and quantification technique. Microstrip ring-type resonators are particularly favored for this purpose due to their planar sensing geometry, electromagnetic field enhancements in the coupling gap and compatibility with established printed circuit board manufacturing. However, the lack of selectivity in what is essentially a permittivity-sensing method is an impediment to wider adoption and implementation of this sensing platform

  10. High voltage monolithic active pixel sensors for the PANDA luminosity detector

    Energy Technology Data Exchange (ETDEWEB)

    Weber, Tobias; Feldbauer, Florian; Jasinski, Prometeusz; Leithoff, Heinrich; Motzko, Christof; Fritsch, Miriam [Helmholtz-Institut Mainz and Institut fuer Kernphysik, Universitaet Mainz (Germany); Collaboration: PANDA-Collaboration

    2014-07-01

    The PANDA-Experiment will be part of the new FAIR accelerator center at Darmstadt, Germany. It is a fixed target experiment using a antiproton beam with very high resolution for precision measurements. For a variety of measurements like energy-scans the precise determination of the luminosity is needed. The luminosity detector will determine the luminosity by measuring the angular distribution of elastically scattered antiprotons very close to the beam axis (3-8 mrad). To reconstruct antiproton tracks four layers of thinned silicon sensors with smart pixel readout on chip (HV-MAPS) will be used. Those sensors are currently under development by the Mu3e-collaboration. In the talk the concept of the luminosity measurement is shortly introduced before a summary of the status of HV-MAP prototypes and recent test beam results are presented.

  11. Imaging Membrane Potential with Two Types of Genetically Encoded Fluorescent Voltage Sensors.

    Science.gov (United States)

    Lee, Sungmoo; Piao, Hong Hua; Sepheri-Rad, Masoud; Jung, Arong; Sung, Uhna; Song, Yoon-Kyu; Baker, Bradley J

    2016-02-04

    Genetically encoded voltage indicators (GEVIs) have improved to the point where they are beginning to be useful for in vivo recordings. While the ultimate goal is to image neuronal activity in vivo, one must be able to image activity of a single cell to ensure successful in vivo preparations. This procedure will describe how to image membrane potential in a single cell to provide a foundation to eventually image in vivo. Here we describe methods for imaging GEVIs consisting of a voltage-sensing domain fused to either a single fluorescent protein (FP) or two fluorescent proteins capable of Förster resonance energy transfer (FRET) in vitro. Using an image splitter enables the projection of images created by two different wavelengths onto the same charge-coupled device (CCD) camera simultaneously. The image splitter positions a second filter cube in the light path. This second filter cube consists of a dichroic and two emission filters to separate the donor and acceptor fluorescent wavelengths depending on the FPs of the GEVI. This setup enables the simultaneous recording of both the acceptor and donor fluorescent partners while the membrane potential is manipulated via whole cell patch clamp configuration. When using a GEVI consisting of a single FP, the second filter cube can be removed allowing the mirrors in the image splitter to project a single image onto the CCD camera.

  12. Characterisation of spatial and temporal changes in pH gradients in microfluidic channels using optically trapped fluorescent sensors.

    Science.gov (United States)

    Klauke, Norbert; Monaghan, Paul; Sinclair, Gavin; Padgett, Miles; Cooper, Jon

    2006-06-01

    This paper demonstrates the use of micron sized beads, modified with fluorescent dyes, as non-invasive sensors to probe the local changes in pH, within a microfluidic channel. To achieve this, amine modified polystyrene spheres (either 3 microm or 6 microm in diameter) were functionalised with the pH sensitive fluorochrome SNARF-1 to produce point sensors. The modified beads were trapped at defined positions close to a pair of integrated planar gold microelectrodes within the channel, using optical tweezers. Both transient and steady-state electrochemical potentials were applied to the microelectrode pair in order to generate changes in the local pH, associated with electrolysis. The functionalised beads indicated the pH changes in the channel, measured as a change in the fluorescence signal, generated by the immobilised pH sensitive dye. Responses were measured with temporal resolutions of between 1 and 200 ms, whilst the spatial resolution of the pH gradients was limited by the size of the beads to 3 microm.

  13. Two-photon scanning microscopy of in vivo sensory responses of cortical neurons genetically encoded with a fluorescent voltage sensor in rat

    Directory of Open Access Journals (Sweden)

    Kurt F Ahrens

    2012-03-01

    Full Text Available A fluorescent voltage sensor protein Flare was created from a Kv1.4 potassium channel with YFP situated to report voltage-induced conformational changes in vivo. The RNA virus Sindbis introduced Flare into neurons in the binocular visual crescent in rat. Injection sites were selected based on intrinsic optical imaging. Expression of Flare occurred in the cell bodies and dendritic processes. Neurons imaged in vivo using two-photon scanning microscopy typically revealed the soma best, discernable against the background labeling of the neuropil. Somatic fluorescence changes were correlated with flashed visual stimuli; however, averaging was essential to observe these changes. This study demonstrates that the genetic modification of single neurons to express a fluorescent voltage sensor can be used to assess neuronal activity in vivo.

  14. Two-photon scanning microscopy of in vivo sensory responses of cortical neurons genetically encoded with a fluorescent voltage sensor in rat

    Science.gov (United States)

    Ahrens, Kurt F.; Heider, Barbara; Lee, Hanson; Isacoff, Ehud Y.; Siegel, Ralph M.

    2012-01-01

    A fluorescent voltage sensor protein “Flare” was created from a Kv1.4 potassium channel with YFP situated to report voltage-induced conformational changes in vivo. The RNA virus Sindbis introduced Flare into neurons in the binocular region of visual cortex in rat. Injection sites were selected based on intrinsic optical imaging. Expression of Flare occurred in the cell bodies and dendritic processes. Neurons imaged in vivo using two-photon scanning microscopy typically revealed the soma best, discernable against the background labeling of the neuropil. Somatic fluorescence changes were correlated with flashed visual stimuli; however, averaging was essential to observe these changes. This study demonstrates that the genetic modification of single neurons to express a fluorescent voltage sensor can be used to assess neuronal activity in vivo. PMID:22461770

  15. Impact of field limiting ring technique on breakdown voltage of irradiated Si sensors

    CERN Document Server

    Bhardwaj, Ashutosh; Jha Manoj, Kr; Kumar, Ashish; Ranjan, Kirti; Shivpuri, RK; Srivastava-Ajay, K

    2003-01-01

    The very intense radiation environment of high luminosity future colliding beam experiments (like LHC) makes radiation hardness the most important issue for Si detectors. One of the central issues concerning all LHC experiments is the breakdown performance of these detectors. The major macroscopic effect of radiation damage in determining the viability of long-term operation of Si sensors is the change in effective charge carrier concentration (N //e//f//f), leading to type-inversion. Floating field limiting guard rings have been established as means of improving the breakdown performance of Si detectors. In this work the usefulness of the guard rings in improving the breakdown performance of detectors after type-inversion has been studied. Simulations are carried out to study the effect of change in N//e//f//f on the breakdown performance of optimized guard ring structure using two dimensional device simulation program, TMA- MEDICI. Detailed calculations using Hamburg Model have allowed the parameterization ...

  16. Impact of field limiting ring technique on breakdown voltage of irradiated Si sensors

    CERN Document Server

    Bhardwaj, A; Namrata, S; Chatterji, S; Srivastava-Ajay, K; Kumar, A; Jha, Manoj Kumar; Shivpuri, R K

    2004-01-01

    The very intense radiation environment of high luminosity future colliding beam experiments (like LHC) makes radiation hardness the most important issue for Si detectors. One of the central issues concerning all LHC experiments is the breakdown performance of these detectors. The major macroscopic effect of radiation damage in determining the viability of long-term operation of Si sensors is the change in effective charge carrier concentration (N/sub eff/), leading to type-inversion. Floating field limiting guard rings have been established as means of improving the breakdown performance of Si detectors. In this work the usefulness of the guard rings in improving the breakdown performance of detectors after type-inversion has been studied. Simulations are carried out to study the effect of change in N/sub eff/ on the breakdown performance of optimized guard ring structure using two dimensional device simulation program, TMA- MEDICI. Detailed calculations using Hamburg Model have allowed the parameterization o...

  17. S1-S3 counter charges in the voltage sensor module of a mammalian sodium channel regulate fast inactivation.

    Science.gov (United States)

    Groome, James R; Winston, Vern

    2013-05-01

    The movement of positively charged S4 segments through the electric field drives the voltage-dependent gating of ion channels. Studies of prokaryotic sodium channels provide a mechanistic view of activation facilitated by electrostatic interactions of negatively charged residues in S1 and S2 segments, with positive counterparts in the S4 segment. In mammalian sodium channels, S4 segments promote domain-specific functions that include activation and several forms of inactivation. We tested the idea that S1-S3 countercharges regulate eukaryotic sodium channel functions, including fast inactivation. Using structural data provided by bacterial channels, we constructed homology models of the S1-S4 voltage sensor module (VSM) for each domain of the mammalian skeletal muscle sodium channel hNaV1.4. These show that side chains of putative countercharges in hNaV1.4 are oriented toward the positive charge complement of S4. We used mutagenesis to define the roles of conserved residues in the extracellular negative charge cluster (ENC), hydrophobic charge region (HCR), and intracellular negative charge cluster (INC). Activation was inhibited with charge-reversing VSM mutations in domains I-III. Charge reversal of ENC residues in domains III (E1051R, D1069K) and IV (E1373K, N1389K) destabilized fast inactivation by decreasing its probability, slowing entry, and accelerating recovery. Several INC mutations increased inactivation from closed states and slowed recovery. Our results extend the functional characterization of VSM countercharges to fast inactivation, and support the premise that these residues play a critical role in domain-specific gating transitions for a mammalian sodium channel.

  18. Application of HFCT and UHF Sensors in On-Line Partial Discharge Measurements for Insulation Diagnosis of High Voltage Equipment

    Directory of Open Access Journals (Sweden)

    Fernando Álvarez

    2015-03-01

    Full Text Available Partial discharge (PD measurements provide valuable information for assessing the condition of high voltage (HV insulation systems, contributing to their quality assurance. Different PD measuring techniques have been developed in the last years specially designed to perform on-line measurements. Non-conventional PD methods operating in high frequency bands are usually used when this type of tests are carried out. In PD measurements the signal acquisition, the subsequent signal processing and the capability to obtain an accurate diagnosis are conditioned by the selection of a suitable detection technique and by the implementation of effective signal processing tools. This paper proposes an optimized electromagnetic detection method based on the combined use of wideband PD sensors for measurements performed in the HF and UHF frequency ranges, together with the implementation of powerful processing tools. The effectiveness of the measuring techniques proposed is demonstrated through an example, where several PD sources are measured simultaneously in a HV installation consisting of a cable system connected by a plug-in terminal to a gas insulated substation (GIS compartment.

  19. A DC-Link Voltage Self-Balance Method for a Diode-Clamped Modular Multilevel Converter With Minimum Number of Voltage Sensors

    DEFF Research Database (Denmark)

    Gao, Congzhe; Jiang, Xinjian; Li, Yongdong

    2013-01-01

    Voltage balance issue of dc-link capacitors is very important for applications of a cascade multilevel converter or a modular multilevel converter. In this paper, a novel diode-clamped modular multilevel converter (DCM2C) topology is proposed and a power feedback control method is developed...

  20. Applications of passive remote surface acoustic wave sensors in high-voltage systems; Einsatz von passiven funkabfragbaren Oberflaechenwellensensoren in der elektrischen Energietechnik

    Energy Technology Data Exchange (ETDEWEB)

    Teminova, R.

    2007-06-29

    Passive remote Surface Acoustic Wave (SAW) sensors have been applied e.g. as temperature, pressure or torque sensors. Their important advantages over standard methods are their passive operating principle, which allows operation without any power supply, as well as the wireless high-frequency signal transmission over distances up to about 10..15 m even through (non metallic) housings. These properties of SAW sensors particularly qualify them for applications in high voltage operational equipment. First experience was gained in a long time field test of surge arrester monitoring based on SAW temperature sensors in a German high-voltage substation. Now, this system has been further developed at Darmstadt University of Technology for other applications, the first of them being an overhead line (OHL) conductor temperature measurement, the second one a temperature monitoring system for of high-voltage disconnectors. After designing and building the sensors, extensive laboratory tests were carried out applying high-voltage, high-current and thermal stress in order to approve the suitability for the intended application. All these tests confirmed the assumption that SAW sensors, due to their passive working principle, are not affected at all by any kind of electrical, magnetic or thermal stress that may occur during service. The complete temperature sensor consists of three parts: a sensor chip, an antenna which receives and transmits the signal from and to the radar unit and a body for installation and for protection against environmental impact. One must find a good compromise between optimizing of thermal, dielectric and high-frequency characteristics and at the same time taking into consideration a simple installation. These requirements on the SAW sensors turned out to be difficult to coordinate. To achieve a high measuring precision is especially difficult. First, a new sensor for OHL application was developed. The OHL conductor temperature sensor had been optimized

  1. mTORC1 Is a Local, Postsynaptic Voltage Sensor Regulated by Positive and Negative Feedback Pathways

    Directory of Open Access Journals (Sweden)

    Farr Niere

    2017-05-01

    Full Text Available The mammalian/mechanistic target of rapamycin complex 1 (mTORC1 serves as a regulator of mRNA translation. Recent studies suggest that mTORC1 may also serve as a local, voltage sensor in the postsynaptic region of neurons. Considering biochemical, bioinformatics and imaging data, we hypothesize that the activity state of mTORC1 dynamically regulates local membrane potential by promoting and repressing protein synthesis of select mRNAs. Our hypothesis suggests that mTORC1 uses positive and negative feedback pathways, in a branch-specific manner, to maintain neuronal excitability within an optimal range. In some dendritic branches, mTORC1 activity oscillates between the “On” and “Off” states. We define this as negative feedback. In contrast, positive feedback is defined as the pathway that leads to a prolonged depolarized or hyperpolarized resting membrane potential, whereby mTORC1 activity is constitutively on or off, respectively. We propose that inactivation of mTORC1 increases the expression of voltage-gated potassium alpha (Kv1.1 and 1.2 and beta (Kvβ2 subunits, ensuring that the membrane resets to its resting membrane potential after experiencing increased synaptic activity. In turn, reduced mTORC1 activity increases the protein expression of syntaxin-1A and promotes the surface expression of the ionotropic glutamate receptor N-methyl-D-aspartate (NMDA-type subunit 1 (GluN1 that facilitates increased calcium entry to turn mTORC1 back on. Under conditions such as learning and memory, mTORC1 activity is required to be high for longer periods of time. Thus, the arm of the pathway that promotes syntaxin-1A and Kv1 protein synthesis will be repressed. Moreover, dendritic branches that have low mTORC1 activity with increased Kv expression would balance dendrites with constitutively high mTORC1 activity, allowing for the neuron to maintain its overall activity level within an ideal operating range. Finally, such a model suggests that

  2. Relationship between CO2 Sensor Voltage Response and Phase Equilibrium of Solid Electrolyte Na, K-β/β"-Al2O3

    Institute of Scientific and Technical Information of China (English)

    J.H. YANG; H.N(a)fe; F. Aldinger; D.S. YAN

    2003-01-01

    A type of CO2 sensor based on oxygen concentration cell was designed as following: Cell I: Pt | Au, O2,CO2|Na2CO3(Au)|NKBA(Au)|YSZ|O2, CO2|Pt or Cell Ⅱ: Pt|Au, O2, CO2|K2CO3(Au)|NKBA(Au)|YSZ|O2, CO2|Pt.(Na,K-β/β″-Al2O3 is named by NKBA). The sensor signal is consistent with the Nernstian slope within the region ofphase equilibrium for Na, K-β/β"-Al2O3 material. The relationship between CO2 sensor voltage response and phaseequilibrium of solid electrolyte Na, K-β/β-Al2O3 is discussed in this paper.

  3. Impact of metal overhang and guard ring techniques on breakdown voltage of Si strip sensors - 2003 IEEE nuclear science symposium, medical imaging conference, and workshop of room-temperature semiconductor detectors

    CERN Document Server

    Ranjan, K; Namrata, S; Chatterji, S; Srivastava-Ajay, K; Kumar, A; Jha, Manoj Kumar; Shivpuri, R K

    2004-01-01

    The importance of Si sensors in high-energy physics (HEP) experiments can hardly be overemphasized. However, the high luminosity and the high radiation level in the future HEP experiments, like Large Hadron Collider (LHC), has posed a serious challenge to the fabrication of Si detectors. For the safe operation over the full LHC lifetime, detectors are required to sustain very high voltage operation, well exceeding the bias voltage needed to full deplete the heavily irradiated Si sensors. Thus, the main effort in the development of Si sensors is concentrated on a design that avoids p-n junction breakdown at operational biases. Among various proposed techniques, Field-limiting Ring (FLR) (or guard ring) and Metal-Overhang (MO) are technologically simple and are suitable for vertical devices. Since high-voltage planar Si junctions are of great importance in the HEP experiments, it is very interesting to compare these two aforementioned techniques for achieving the maximum breakdown voltage under optimal conditio...

  4. Development and Application of a Wireless Sensor for Space Charge Density Measurement in an Ultra-High-Voltage, Direct-Current Environment.

    Science.gov (United States)

    Xin, Encheng; Ju, Yong; Yuan, Haiwen

    2016-10-20

    A space charge density wireless measurement system based on the idea of distributed measurement is proposed for collecting and monitoring the space charge density in an ultra-high-voltage direct-current (UHVDC) environment. The proposed system architecture is composed of a number of wireless nodes connected with space charge density sensors and a base station. The space charge density sensor based on atmospheric ion counter method is elaborated and developed, and the ARM microprocessor and Zigbee radio frequency module are applied. The wireless network communication quality and the relationship between energy consumption and transmission distance in the complicated electromagnetic environment is tested. Based on the experimental results, the proposed measurement system demonstrates that it can adapt to the complex electromagnetic environment under the UHVDC transmission lines and can accurately measure the space charge density.

  5. Wireless Power Supply via Coupled Magnetic Resonance for on-line Monitoring Wireless Sensor of High-voltage Electrical Equipment

    DEFF Research Database (Denmark)

    Xingkui, Mao; Qisheng, Huang; Yudi, Xiao

    2016-01-01

    , in this paper, the wireless power supply via coupled magnetic resonance (MR-WPS) is proposed for powering the wireless sensor and the associated wireless sensor solution is also proposed. The key specifications of the MR-WPS working in switchgear cabinet with a harsh operation environment are analyzed...

  6. The Mechanism of Voltage Dependent Gating of the NaChBac Prokaryotic Sodium Channel

    Science.gov (United States)

    Decaen, Paul G.

    Electrical signaling in cells depends on selective conductance of ions through membrane proteins called 'voltage gated ion channels'. These channels are characterized by their ability turn on and off the flow of ionic current by opening and closing their conductive pore in response to changes in membrane potential. The opening and closing of the pore is a mechanically linked to conformational movement of the positively charged fourth transmembrane segment (S4) in 'the voltage sensor' region. How the S4 moves in response to membrane potential is a controversial subject. In this thesis, we used the prokaryotic sodium channel NaChBac as our model sodium channel to study voltage dependent movement of the S4 in the voltage sensor. We use a disulfide-locking method where we introduced pairs of cysteines in the voltage sensor that crosslink and trap the S4 in its path after depolarization. We screened over one hundred mutations of the NaChBac channel in the whole cell patch clamp assay and demonstrated discrete and sequential voltage dependent ion pair interactions that occur in at least three states between the positively charged residues of the S4 segment and the acidic residues in the S1, S2 and S3 segments. In conjunction with structural modeling of the voltage sensor and our disulfide locking data, we propose that the S4 moves in and out of the plane of the membrane 8-13 A, forming distinct gating charge interactions with counter charges of the voltage sensor and adopts a 310 helix over a portion of its structure during activation. These findings are compatible with the sliding helix model and refine our understanding of the structural determinates of voltage sensor function in voltage gated ion channels.

  7. Discrimination Method of the Volatiles from Fresh Mushrooms by an Electronic Nose Using a Trapping System and Statistical Standardization to Reduce Sensor Value Variation

    Directory of Open Access Journals (Sweden)

    Kouki Fujioka

    2013-11-01

    Full Text Available Electronic noses have the benefit of obtaining smell information in a simple and objective manner, therefore, many applications have been developed for broad analysis areas such as food, drinks, cosmetics, medicine, and agriculture. However, measurement values from electronic noses have a tendency to vary under humidity or alcohol exposure conditions, since several types of sensors in the devices are affected by such variables. Consequently, we show three techniques for reducing the variation of sensor values: (1 using a trapping system to reduce the infering components; (2 performing statistical standardization (calculation of z-score; and (3 selecting suitable sensors. With these techniques, we discriminated the volatiles of four types of fresh mushrooms: golden needle (Flammulina velutipes, white mushroom (Agaricus bisporus, shiitake (Lentinus edodes, and eryngii (Pleurotus eryngii among six fresh mushrooms (hen of the woods (Grifola frondosa, shimeji (Hypsizygus marmoreus plus the above mushrooms. Additionally, we succeeded in discrimination of white mushroom, only comparing with artificial mushroom flavors, such as champignon flavor and truffle flavor. In conclusion, our techniques will expand the options to reduce variations in sensor values.

  8. Fibre-optic sensors for partial discharge-generated ultrasound in elastomeric high-voltage insulation materials

    Science.gov (United States)

    Rohwetter, P.; Habel, W.

    2013-05-01

    Recent progress in the development of ultrasonic fibre-optic sensors for detecting acoustic emission from partial discharge in elastomeric insulations is presented. These sensors are an important part of a proposed comprehensive scheme for the fibre-optic monitoring of cable accessories. After specifying the underlying design goals the improved fibre-optic sensor design is outlined. It is experimentally shown that it offers about ten-fold improvement over a previously investigated resonant cantilever-type design in terms of detection limit, making it competitive with conventional piezoelectric transducers, however with the added compatibility with strong electrical fields and electromagnetically noisy environments.

  9. CMOS temperature sensor using a resistively degenerated common-source amplifier biased by an adjustable proportional-to-absolute-temperature voltage

    Science.gov (United States)

    Wang, Ruey-Lue; Fu, Chien-Cheng; Yu, Chi; Hao, Yi-Fan; Shi, Jian-Liang; Lin, Chen-Fu; Liao, Hsin-Hao; Tsai, Hann-Huei; Juang, Ying-Zong

    2014-01-01

    A high-linearity CMOS temperature sensor with pulse output is presented. The temperature core is a resistively degenerated common-source amplifier which gate is biased by a proportional-to-absolute-temperature (PTAT) voltage generator. The source resistor is made of polysilicon which resistance has a PTAT characteristic. The current flowing through the resistor exhibits a PTAT characteristic with high linearity of 99.99% at least for a temperature range from 0 to 125 °C. The PTAT voltage generator can be adjusted by a bias voltage Vb and hence the PTAT current can also be adjusted by the Vb. The PTAT current is mirrored to an added current controlled oscillator which output pulse frequencies also exhibit a PTAT characteristic. For the chip using the 0.35 µm process, the plots of measured pulse frequencies against temperature exhibit the sensitivity of 2.30 to 2.24 kHz/°C with linearity of more than 99.99% at the Vb of 1 to 1.2 V.

  10. Microfabricated ion trap array

    Science.gov (United States)

    Blain, Matthew G.; Fleming, James G.

    2006-12-26

    A microfabricated ion trap array, comprising a plurality of ion traps having an inner radius of order one micron, can be fabricated using surface micromachining techniques and materials known to the integrated circuits manufacturing and microelectromechanical systems industries. Micromachining methods enable batch fabrication, reduced manufacturing costs, dimensional and positional precision, and monolithic integration of massive arrays of ion traps with microscale ion generation and detection devices. Massive arraying enables the microscale ion traps to retain the resolution, sensitivity, and mass range advantages necessary for high chemical selectivity. The reduced electrode voltage enables integration of the microfabricated ion trap array with on-chip circuit-based rf operation and detection electronics (i.e., cell phone electronics). Therefore, the full performance advantages of the microfabricated ion trap array can be realized in truly field portable, handheld microanalysis systems.

  11. Ion permeation and block of the gating pore in the voltage sensor of NaV1.4 channels with hypokalemic periodic paralysis mutations.

    Science.gov (United States)

    Sokolov, Stanislav; Scheuer, Todd; Catterall, William A

    2010-08-01

    Hypokalemic periodic paralysis and normokalemic periodic paralysis are caused by mutations of the gating charge-carrying arginine residues in skeletal muscle Na(V)1.4 channels, which induce gating pore current through the mutant voltage sensor domains. Inward sodium currents through the gating pore of mutant R666G are only approximately 1% of central pore current, but substitution of guanidine for sodium in the extracellular solution increases their size by 13- +/- 2-fold. Ethylguanidine is permeant through the R666G gating pore at physiological membrane potentials but blocks the gating pore at hyperpolarized potentials. Guanidine is also highly permeant through the proton-selective gating pore formed by the mutant R666H. Gating pore current conducted by the R666G mutant is blocked by divalent cations such as Ba(2+) and Zn(2+) in a voltage-dependent manner. The affinity for voltage-dependent block of gating pore current by Ba(2+) and Zn(2+) is increased at more negative holding potentials. The apparent dissociation constant (K(d)) values for Zn(2+) block for test pulses to -160 mV are 650 +/- 150 microM, 360 +/- 70 microM, and 95.6 +/- 11 microM at holding potentials of 0 mV, -80 mV, and -120 mV, respectively. Gating pore current is blocked by trivalent cations, but in a nearly voltage-independent manner, with an apparent K(d) for Gd(3+) of 238 +/- 14 microM at -80 mV. To test whether these periodic paralyses might be treated by blocking gating pore current, we screened several aromatic and aliphatic guanidine derivatives and found that 1-(2,4-xylyl)guanidinium can block gating pore current in the millimolar concentration range without affecting normal Na(V)1.4 channel function. Together, our results demonstrate unique permeability of guanidine through Na(V)1.4 gating pores, define voltage-dependent and voltage-independent block by divalent and trivalent cations, respectively, and provide initial support for the concept that guanidine-based gating pore blockers

  12. Laser cooling and trapping of atomic strontium for ultracold atom physics, high-precision spectroscopy and quantum sensors

    OpenAIRE

    Sorrentino, F.; Ferrari, G.; Poli, N.; Drullinger, R. E.; G. M. Tino

    2006-01-01

    This review describes the production of atomic strontium samples at ultra-low temperature and at high phase-space density, and their possible use for physical studies and applications. We describe the process of loading a magneto-optical trap from an atomic beam and preparing the sample for high precision measurements. Particular emphasis is given to the applications of ultracold Sr samples, spanning from optical frequency metrology to force sensing at micrometer scale.

  13. PWM的整流器无交流电压传感器控制%Vector Control of PWM Rectifier without AC Voltage sensors

    Institute of Scientific and Technical Information of China (English)

    张宏杰

    2012-01-01

      针对采用虚拟磁链定向控制策略的PWM整流器无交流电压传感器控制中存在的由积分环节带来的一系列问题,将滑模观测器(SMO)应用于估测电网电压角度,利用饱和函数代替传统滑模观测器中的符号函数以削弱系统抖振,并对比分析了两种情况下等效控制信号的频谱图,仿真和实验结果表明,基于滑模观测器的PWM整流器具有良好的动静态响应和输入输出特性,验证了所提出的无交流电压传感器控制策略的有效性和准确性。%  To solve the problems caused by integer which were used in virtual flux oriented control of PWM rec⁃tifier without AC voltage sensors, a sliding mode observer (SMO) was designed to estimate grid voltage angle. This paper analyzes the principle, designs steps of SMO .and uses saturated function instead of symbols function in traditional sliding mode observer to weaken the system chattering. The paper also analyzes the equivalent con⁃trol signal spectrum diagram in the two cases. Simulation and experimental results show that PWM rectifier has a good dynamic/static response and input/output characteristics and verifies the validity and feasibility of the pro⁃posed AC voltage sensorless control strategy.

  14. The S4-S5 linker directly couples voltage sensor movement to the activation gate in the human ether-a'-go-go-related gene (hERG) K+ channel.

    Science.gov (United States)

    Ferrer, Tania; Rupp, Jason; Piper, David R; Tristani-Firouzi, Martin

    2006-05-05

    A key unresolved question regarding the basic function of voltage-gated ion channels is how movement of the voltage sensor is coupled to channel opening. We previously proposed that the S4-S5 linker couples voltage sensor movement to the S6 domain in the human ether-a'-go-go-related gene (hERG) K+ channel. The recently solved crystal structure of the voltage-gated Kv1.2 channel reveals that the S4-S5 linker is the structural link between the voltage sensing and pore domains. In this study, we used chimeras constructed from hERG and ether-a'-go-go (EAG) channels to identify interactions between residues in the S4-S5 linker and S6 domain that were critical for stabilizing the channel in a closed state. To verify the spatial proximity of these regions, we introduced cysteines in the S4-S5 linker and at the C-terminal end of the S6 domain and then probed for the effect of oxidation. The D540C-L666C channel current decreased in an oxidizing environment in a state-dependent manner consistent with formation of a disulfide bond that locked the channel in a closed state. Disulfide bond formation also restricted movement of the voltage sensor, as measured by gating currents. Taken together, these data confirm that the S4-S5 linker directly couples voltage sensor movement to the activation gate. Moreover, rather than functioning simply as a mechanical lever, these findings imply that specific interactions between the S4-S5 linker and the activation gate stabilize the closed channel conformation.

  15. A CAD investigation of metal-overhang on multiple guard ring design for high voltage operation of Si sensors

    Science.gov (United States)

    Bhardwaj, Ashutosh; Ranjan, Kirti; Namrata; Chatterji, Sudeep; Srivastava, Ajay K.; Shivpuri, R. K.

    2002-12-01

    The extension of Si detectors to the next generation high-energy physics experiments such as large hadron collider implies a reliable operation in high radiation environment which is by far the main technological challenge for these detectors. Multiple field limiting ring systems are well established as a means of protecting diffused junction from high voltage premature breakdown. Also, a spread of the Al metallization over the inter-cathodic field oxide sensibly lowers the electric field at the junction edges, thus, allowing for higher breakdown voltages. The purpose of this work is to combine the positive aspects of these two termination techniques with the aim of defining layouts and technological solutions suitable for the use of Si detectors in adverse radiation environment. An important feature is the potential distribution in the multi-guard ring structure, which depends on the bulk doping concentration, the oxide charge, the size of the gap between guard rings and the metal-overhang design. A systematic investigation on the breakdown performance is done by varying the physical and geometrical parameters such as width of overhang, guard ring spacing, junction depth and oxide charge. CAD tools are used for evaluating potential and electric field distributions within the device.

  16. Electron traps in semiconducting polymers: exponential versus Gaussian trap distribution

    NARCIS (Netherlands)

    Nicolai, H.T.; Mandoc, M.M.; Blom, P.W.M.

    2011-01-01

    The low electron currents in poly(dialkoxy-p-phenylene vinylene) (PPV) derivatives and their steep voltage dependence are generally explained by trap-limited conduction in the presence of an exponential trap distribution. Here we demonstrate that the electron transport of several PPV derivatives can

  17. Electron traps in semiconducting polymers : Exponential versus Gaussian trap distribution

    NARCIS (Netherlands)

    Nicolai, H. T.; Mandoc, M. M.; Blom, P. W. M.

    2011-01-01

    The low electron currents in poly(dialkoxy-p-phenylene vinylene) (PPV) derivatives and their steep voltage dependence are generally explained by trap-limited conduction in the presence of an exponential trap distribution. Here we demonstrate that the electron transport of several PPV derivatives can

  18. Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, H. [PBI-Dansensor A/S (Denmark); Toft Soerensen, O. [Risoe National Lab., Materials Research Dept. (Denmark)

    1999-10-01

    A new type of ceramic oxygen sensors based on semiconducting oxides was developed in this project. The advantage of these sensors compared to standard ZrO{sub 2} sensors is that they do not require a reference gas and that they can be produced in small sizes. The sensor design and the techniques developed for production of these sensors are judged suitable by the participating industry for a niche production of a new generation of oxygen sensors. Materials research on new oxygen ion conducting conductors both for applications in oxygen sensors and in fuel was also performed in this project and finally a new process was developed for fabrication of ceramic tubes by dip-coating. (EHS)

  19. Sensors

    CERN Document Server

    Pigorsch, Enrico

    1997-01-01

    This is the 5th edition of the Metra Martech Directory "EUROPEAN CENTRES OF EXPERTISE - SENSORS." The entries represent a survey of European sensors development. The new edition contains 425 detailed profiles of companies and research institutions in 22 countries. This is reflected in the diversity of sensors development programmes described, from sensors for physical parameters to biosensors and intelligent sensor systems. We do not claim that all European organisations developing sensors are included, but this is a good cross section from an invited list of participants. If you see gaps or omissions, or would like your organisation to be included, please send details. The data base invites the formation of effective joint ventures by identifying and providing access to specific areas in which organisations offer collaboration. This issue is recognised to be of great importance and most entrants include details of collaboration offered and sought. We hope the directory on Sensors will help you to find the ri...

  20. Cryogenic resonator design for trapped ion experiments in Paul traps

    CERN Document Server

    Brandl, Matthias F; Monz, Thomas; Blatt, Rainer

    2016-01-01

    Trapping ions in Paul traps requires high radio-frequency voltages, which are generated using resonators. When operating traps in a cryogenic environment, an in-vacuum resonator showing low loss is crucial to limit the thermal load to the cryostat. In this study, we present a guide for the design and production of compact, shielded cryogenic resonators. We produced and characterized three different types of resonators and furthermore demonstrate efficient impedance matching of these resonators at cryogenic temperatures.

  1. Profile structures of the voltage-sensor domain and the voltage-gated K+-channel vectorially oriented in a single phospholipid bilayer membrane at the solid-vapor and solid-liquid interfaces determined by x-ray interferometry

    Science.gov (United States)

    Gupta, S.; Liu, J.; Strzalka, J.; Blasie, J. K.

    2011-09-01

    One subunit of the prokaryotic voltage-gated potassium ion channel from Aeropyrum pernix (KvAP) is comprised of six transmembrane α helices, of which S1-S4 form the voltage-sensor domain (VSD) and S5 and S6 contribute to the pore domain (PD) of the functional homotetramer. However, the mechanism of electromechanical coupling interconverting the closed-to-open (i.e., nonconducting-to-K+-conducting) states remains undetermined. Here, we have vectorially oriented the detergent (OG)-solubilized VSD in single monolayers by two independent approaches, namely “directed-assembly” and “self-assembly,” to achieve a high in-plane density. Both utilize Ni coordination chemistry to tether the protein to an alkylated inorganic surface via its C-terminal His6 tag. Subsequently, the detergent is replaced by phospholipid (POPC) via exchange, intended to reconstitute a phospholipid bilayer environment for the protein. X-ray interferometry, in which interference with a multilayer reference structure is used to both enhance and phase the specular x-ray reflectivity from the tethered single membrane, was used to determine directly the electron density profile structures of the VSD protein solvated by detergent versus phospholipid, and with either a moist He (moderate hydration) or bulk aqueous buffer (high hydration) environment to preserve a native structure conformation. Difference electron density profiles, with respect to the multilayer substrate itself, for the VSD-OG monolayer and VSD-POPC membranes at both the solid-vapor and solid-liquid interfaces, reveal the profile structures of the VSD protein dominating these profiles and further indicate a successful reconstitution of a lipid bilayer environment. The self-assembly approach was similarly extended to the intact full-length KvAP channel for comparison. The spatial extent and asymmetry in the profile structures of both proteins confirm their unidirectional vectorial orientation within the reconstituted membrane and

  2. Single-Walled Carbon Nanotube Network Field Effect Transistor as a Humidity Sensor

    Directory of Open Access Journals (Sweden)

    Prasantha R. Mudimela

    2012-01-01

    Full Text Available Single-walled carbon nanotube network field effect transistors were fabricated and studied as humidity sensors. Sensing responses were altered by changing the gate voltage. At the open channel state (negative gate voltage, humidity pulse resulted in the decrease of the source-drain current, and, vice versa, the increase in the source-drain current was observed at the positive gate voltage. This effect was explained by the electron-donating nature of water molecules. The operation speed and signal intensity was found to be dependent on the gate voltage polarity. The positive or negative change in current with humidity pulse at zero-gate voltage was found to depend on the previous state of the gate electrode (positive or negative voltage, respectively. Those characteristics were explained by the charge traps in the gate dielectric altering the effective gate voltage, which influenced the operation of field effect transistor.

  3. Negative-Resistance Characteristics Analysis of Poly-Silicon Resistors Formed on the Flow Sensor

    Institute of Scientific and Technical Information of China (English)

    Dianzhong Wen

    2006-01-01

    In this paper we put forward a new concept about effective trapping center concentration NeT which is decreasing with the trapped charge Q corresponding to index movement, based on that, we discuss the I-V and temperature characteristics of polysilicon resistors. The new concept presents ideal theoretical interpretion for the originally observed current-voltage negative-resistance characteristics of polysilicon resistors formed on the flow sensor, and also for poly-silicon film resistors.The final results agree well with the theoretical current-voltage characteristics.

  4. 激励电压对汽车碰撞试验传感器输出的影响分析%Analysis on Effect of Excitation Voltage on Sensor Output during the Automotive Crash Test

    Institute of Scientific and Technical Information of China (English)

    郑佳丽; 张毅; 韩刚; 刘卫国; 赵福全

    2013-01-01

      碰撞试验中,假人及传感器组成数据采集系统的第一部分,输出的数据反映了冲击环境中模拟人体的生物力学响应。因此,最终的数据结果非常重要。传感器激励电压的不同,产生的热量也不同。碰撞试验中使用的传感器数量达200多个,因此假人体内会因激励电压产生较大的热量,从而产生温度误差,最终引起数据的不准确。因此,在碰撞试验中,要确保假人体内温度与标准符合;要求传感器标定电压与数据采集输入的激励电压一致。%The dummy and sensors constitute the first part of a data acquisition system during the crash test. The output data reflects the biomechanical response of a simulation human body under impact environment; therefore, final data results are quite important. The different excitation voltages of sensors usually generate different heat amount. There are more than 200 sensors which are used in the crash test. Hence, more heat amount may be produced in a dummy body due to excitation voltage, thus leading to temperature error. The incorrect data would be ultimately created. Therefore, it is guaranteed that body temperature of dummy conforms to standard during the crash test. Furthermore, it is also required that calibration voltage of sensors is always consistent with excitation voltage intended for data acquisition.

  5. Energetics and forces of the Dionaea muscipula trap closing.

    Science.gov (United States)

    Volkov, Alexander G; Murphy, Veronica A; Clemmons, Jacqueline I; Curley, Michael J; Markin, Vladislav S

    2012-01-01

    The Venus flytrap is the most famous carnivorous plant. The electrical stimulus between a midrib and a lobe closes the Venus flytrap upper leaf in 0.3s without mechanical stimulation of trigger hairs. Here we present results for direct measurements of the closing force of the trap of Dionaea muscipula Ellis after mechanical or electrical stimulation of the trap using the piezoelectric thin film or Fuji Prescale indicating sensor film. The closing force was 0.14N and the corresponding pressure between rims of two lobes was 38 kPa. We evaluated theoretically using the Hydroelastic Curvature Model and compared with experimental data velocity, acceleration and kinetic energy from the time dependencies of distance between rims of lobes during the trap closing. The Charge Stimulation Method was used for trap electrostimulation between the midrib and lobes. From the dependence of voltage between two Ag/AgCl electrodes in the midrib and one of the lobes, we estimated electrical charge, current, resistance, electrical energy and electrical power dependencies on time during electrostimulation of the trap. Copyright © 2011 Elsevier GmbH. All rights reserved.

  6. A Single Laser Cooled Trapped 40Ca+ Ion in a Miniature Paul Trap

    Institute of Scientific and Technical Information of China (English)

    SHU Hua-Lin; GUAN Hua; HUANG Xue-Ren; LI Jiao-Mei; GAO Ke-Lin

    2005-01-01

    @@ We have observed the phenomenon of phase transition of a few trapped ions in a miniature Paul trap. Judging from the quantum jump signals, a single laser-cooled trapped Ca+ ion has been realized. The ion temperature is estimated to be 22mK. The result shows that the amplitude of ion micromotion is strongly dependent on the rf voltage.

  7. Giant magnetoimpedance intrinsic impedance and voltage sensitivity of rapidly solidified Co66Fe2Cr4Si13B15 amorphous wire for highly sensitive sensors applications

    Science.gov (United States)

    Das, Tarun K.; Banerji, Pallab; Mandal, Sushil K.

    2016-11-01

    We report a systematic study of the influence of wire length, L, dependence of giant magneto-impedance (GMI) sensitivity of Co66Fe2Cr4Si13B15 soft magnetic amorphous wire of diameter ~100 µm developed by in-water quenching technique. The magnetization behaviour (hysteresis loops) of the wire with different length ( L = 1, 2, 3, 5, 8 and 10 cm) has been evaluated by fuxmetric induction method. It was observed that the behaviour of the hysteresis loops change drastically with the wire length, being attributed to the existence of a critical length, L C, found to be around 3 cm. GMI measurements have been taken using automated GMI measurement system and the GMI sensitivities in terms of intrinsic impedance sensitivity ( S Ω/Am -1) and voltage sensitivity ( S V/Am -1) of the wire have been evaluated under optimal bias field and excitation current. It was found that the maximum ( S Ω/Am -1) max ≈ 0.63 Ω/kAm-1/cm and ( S V/Am -1) max ≈ 3.10 V/kAm-1/cm were achieved at a critical length L C ~ 3 cm of the wire for an AC current of 5 mA and a frequency of 5 MHz. These findings provide crucial insights for optimization of the geometrical dimensions of magnetic sensing elements and important practical guidance for designing high sensitive GMI sensors. The relevant combinations of magnetic material parameters and operating conditions that optimize the sensitivity are highlighted.

  8. Microfabricated cylindrical ion trap

    Science.gov (United States)

    Blain, Matthew G.

    2005-03-22

    A microscale cylindrical ion trap, having an inner radius of order one micron, can be fabricated using surface micromachining techniques and materials known to the integrated circuits manufacturing and microelectromechanical systems industries. Micromachining methods enable batch fabrication, reduced manufacturing costs, dimensional and positional precision, and monolithic integration of massive arrays of ion traps with microscale ion generation and detection devices. Massive arraying enables the microscale cylindrical ion trap to retain the resolution, sensitivity, and mass range advantages necessary for high chemical selectivity. The microscale CIT has a reduced ion mean free path, allowing operation at higher pressures with less expensive and less bulky vacuum pumping system, and with lower battery power than conventional- and miniature-sized ion traps. The reduced electrode voltage enables integration of the microscale cylindrical ion trap with on-chip integrated circuit-based rf operation and detection electronics (i.e., cell phone electronics). Therefore, the full performance advantages of microscale cylindrical ion traps can be realized in truly field portable, handheld microanalysis systems.

  9. Isomerically Pure Tetramethylrhodamine Voltage Reporters.

    Science.gov (United States)

    Deal, Parker E; Kulkarni, Rishikesh U; Al-Abdullatif, Sarah H; Miller, Evan W

    2016-07-27

    We present the design, synthesis, and application of a new family of fluorescent voltage indicators based on isomerically pure tetramethylrhodamines. These new Rhodamine Voltage Reporters, or RhoVRs, use photoinduced electron transfer (PeT) as a trigger for voltage sensing, display excitation and emission profiles in the green to orange region of the visible spectrum, demonstrate high sensitivity to membrane potential changes (up to 47% ΔF/F per 100 mV), and employ a tertiary amide derived from sarcosine, which aids in membrane localization and simultaneously simplifies the synthetic route to the voltage sensors. The most sensitive of the RhoVR dyes, RhoVR 1, features a methoxy-substituted diethylaniline donor and phenylenevinylene molecular wire at the 5'-position of the rhodamine aryl ring, exhibits the highest voltage sensitivity to date for red-shifted PeT-based voltage sensors, and is compatible with simultaneous imaging alongside green fluorescent protein-based indicators. The discoveries that sarcosine-based tertiary amides in the context of molecular-wire voltage indicators prevent dye internalization and 5'-substituted voltage indicators exhibit improved voltage sensitivity should be broadly applicable to other types of PeT-based voltage-sensitive fluorophores.

  10. Molecular dissection of the contribution of negatively and positively charged residues in S2, S3, and S4 to the final membrane topology of the voltage sensor in the K+ channel, KAT1.

    Science.gov (United States)

    Sato, Yoko; Sakaguchi, Masao; Goshima, Shinobu; Nakamura, Tatsunosuke; Uozumi, Nobuyuki

    2003-04-11

    Voltage-dependent ion channels control changes in ion permeability in response to membrane potential changes. The voltage sensor in channel proteins consists of the highly positively charged segment, S4, and the negatively charged segments, S2 and S3. The process involved in the integration of the protein into the membrane remains to be elucidated. In this study, we used in vitro translation and translocation experiments to evaluate interactions between residues in the voltage sensor of a hyperpolarization-activated potassium channel, KAT1, and their effect on the final topology in the endoplasmic reticulum (ER) membrane. A D95V mutation in S2 showed less S3-S4 integration into the membrane, whereas a D105V mutation allowed S4 to be released into the ER lumen. These results indicate that Asp(95) assists in the membrane insertion of S3-S4 and that Asp(105) helps in preventing S4 from being releasing into the ER lumen. The charge reversal mutation, R171D, in S4 rescued the D105R mutation and prevented S4 release into the ER lumen. A series of constructs containing different C-terminal truncations of S4 showed that Arg(174) was required for correct integration of S3 and S4 into the membrane. Interactions between Asp(105) and Arg(171) and between negative residues in S2 or S3 and Arg(174) may be formed transiently during membrane integration. These data clarify the role of charged residues in S2, S3, and S4 and identify posttranslational electrostatic interactions between charged residues that are required to achieve the correct voltage sensor topology in the ER membrane.

  11. Membrane Potential-dependent Uptake of 18F-triphenylphosphonium - A New Voltage Sensor as an Imaging Agent for Detecting Burn-induced Apoptosis

    Science.gov (United States)

    Zhao, Gaofeng; Yu, Yong-Ming; Shoup, Timothy M.; Elmaleh, David R.; Bonab, Ali A.; Tompkins, Ronald G.; Fischman, Alan J.

    2014-01-01

    Background Mitochondrial dysfunction has been closely related to many pathological processes, such as cellular apoptosis. Alterations in organelle membrane potential are associated with mitochondrial dysfunction. A fluorine -18 labeled phosphonium compound: 18F-triphenylphosphonium (18F-TPP) was prepared to determine its potential use as a mitochondria-targeting radiopharmaceutical to evaluate cellular apoptosis. Methods Studies were conducted in both ex vivo cell lines and in vivo using a burned animal model. Uptake of 18F-TPP was assessed in PC-3 cells by gamma counting under the following conditions: graded levels of extra-cellular potassium concentrations, incubation with carbonyl cyanide m-chlorophenylhydrazone (CCCP) and staurosporine. Apoptosis was studied in a burn animal model using TUNEL staining and simultaneous assessment of 18F-TPP uptake by biodistribution. Results We found that stepwise membrane depolarization by potassium (K) resulted in a linear decrease in 18F-TPP uptake, with a slope of 0.62+/−0.08 and a correlation coefficient of 0.936+/−0.11. Gradually increased concentrations of CCCP lead to decreased uptakes of 18F-TPP. Staurosporine significantly decreased the uptake of 18F-TPP in PC-3 cells from 14.2+/−3.8% to 5.6+/−1.3% (P<0.001). Burn induced significant apoptosis (sham: 4.4 +/−1.8% vs. burn: 24.6+/− 6.7 %; p<0.005) and a reduced uptake of tracer in the spleens of burn injured animals as compared to sham burn controls (burn: 1.13+/−0.24% vs. sham: 3.28+/−0.67%; p<0.005). Biodistribution studies demonstrated that burn induced significant reduction in 18F-TPP uptake in spleen, heart, lung, and liver, which were associated with significantly increased apoptosis. Conclusions 18F-TPP is a promising new voltage sensor for detecting mitochondrial dysfunction and apoptosis in various tissues. PMID:24582214

  12. The α2δ-1 subunit remodels CaV1.2 voltage sensors and allows Ca2+ influx at physiological membrane potentials

    Science.gov (United States)

    Pantazis, Antonios; Sigg, Daniel; Weiss, James N.; Neely, Alan

    2016-01-01

    Excitation-evoked calcium influx across cellular membranes is strictly controlled by voltage-gated calcium channels (CaV), which possess four distinct voltage-sensing domains (VSDs) that direct the opening of a central pore. The energetic interactions between the VSDs and the pore are critical for tuning the channel’s voltage dependence. The accessory α2δ-1 subunit is known to facilitate CaV1.2 voltage-dependent activation, but the underlying mechanism is unknown. In this study, using voltage clamp fluorometry, we track the activation of the four individual VSDs in a human L-type CaV1.2 channel consisting of α1C and β3 subunits. We find that, without α2δ-1, the channel complex displays a right-shifted voltage dependence such that currents mainly develop at nonphysiological membrane potentials because of very weak VSD–pore interactions. The presence of α2δ-1 facilitates channel activation by increasing the voltage sensitivity (i.e., the effective charge) of VSDs I–III. Moreover, the α2δ-1 subunit also makes VSDs I–III more efficient at opening the channel by increasing the coupling energy between VSDs II and III and the pore, thus allowing Ca influx within the range of physiological membrane potentials. PMID:27481713

  13. Low-noise Magnetic Sensors

    KAUST Repository

    Kosel, Jurgen

    2014-03-27

    Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

  14. 差动变压器式位移传感器零位电压研究%Study on Zero-point Remainder Voltage of Differential Transformer Displacement Sensor

    Institute of Scientific and Technical Information of China (English)

    贾惠霞; 王健; 张娟

    2015-01-01

    The principle of the differential transformer displacement sensor is very simple,and it is very easy to realize.The measurement errors exit not only because of zero-point remainder voltage of the carrier,but also because of the circuit drift in the process of signal processing.This article was based on the principle and the signal processing of this kind of sensor,and the princi-ple of zero-point remainder voltage and the method of removing it were introduced,thus improving the certainty of measurement.The main part of null voltage was proved through MATLAB simulation and experiment,thus proving the importance of magnetic circuit symmetry in the differential transformer displacement sensor.%差动变压器式位移传感器原理简单,便于实现。但是位移传感器会产生零位电压,同时在信号处理过程中,电路漂移也会引起测量误差。文中主要基于这种传感器的工作原理和信号处理过程,阐述零位电压产生的机理和消除的方法,提高传感器的测量精度,并用MATLAB仿真和实验的方法证明零位电压产生的主要部位,进而说明差动变压器式位移传感器加工时保证磁路对称的重要性。

  15. Characteristics of 8-junction Al single-electron trap

    CERN Document Server

    So, H M; Park, J W; Yoo, K H; Lee, J O; Kim, J J

    2000-01-01

    Single-electron trap, consisting of 8 Al/Al sub 2 O sub 3 /Al tunnel junctions, was fabricated and characterized in normal and superconducting states of Al. The output current of the single-electron transistor exhibited plateaus and hysteresis with varying trap voltage, which was attributed to trapping and releasing of electrons. The activation energy obtained from the voltage interval between current plateaus was consistent with the estimated value.

  16. Trapped antihydrogen

    Science.gov (United States)

    Butler, E.; Andresen, G. B.; Ashkezari, M. D.; Baquero-Ruiz, M.; Bertsche, W.; Bowe, P. D.; Cesar, C. L.; Chapman, S.; Charlton, M.; Deller, A.; Eriksson, S.; Fajans, J.; Friesen, T.; Fujiwara, M. C.; Gill, D. R.; Gutierrez, A.; Hangst, J. S.; Hardy, W. N.; Hayden, M. E.; Humphries, A. J.; Hydomako, R.; Jenkins, M. J.; Jonsell, S.; Jørgensen, L. V.; Kemp, S. L.; Kurchaninov, L.; Madsen, N.; Menary, S.; Nolan, P.; Olchanski, K.; Olin, A.; Povilus, A.; Pusa, P.; Rasmussen, C. Ø.; Robicheaux, F.; Sarid, E.; Seif el Nasr, S.; Silveira, D. M.; So, C.; Storey, J. W.; Thompson, R. I.; van der Werf, D. P.; Wurtele, J. S.; Yamazaki, Y.

    Precision spectroscopic comparison of hydrogen and antihydrogen holds the promise of a sensitive test of the Charge-Parity-Time theorem and matter-antimatter equivalence. The clearest path towards realising this goal is to hold a sample of antihydrogen in an atomic trap for interrogation by electromagnetic radiation. Achieving this poses a huge experimental challenge, as state-of-the-art magnetic-minimum atom traps have well depths of only ˜1 T (˜0.5 K for ground state antihydrogen atoms). The atoms annihilate on contact with matter and must be `born' inside the magnetic trap with low kinetic energies. At the ALPHA experiment, antihydrogen atoms are produced from antiprotons and positrons stored in the form of non-neutral plasmas, where the typical electrostatic potential energy per particle is on the order of electronvolts, more than 104 times the maximum trappable kinetic energy. In November 2010, ALPHA published the observation of 38 antiproton annihilations due to antihydrogen atoms that had been trapped for at least 172 ms and then released—the first instance of a purely antimatter atomic system confined for any length of time (Andresen et al., Nature 468:673, 2010). We present a description of the main components of the ALPHA traps and detectors that were key to realising this result. We discuss how the antihydrogen atoms were identified and how they were discriminated from the background processes. Since the results published in Andresen et al. (Nature 468:673, 2010), refinements in the antihydrogen production technique have allowed many more antihydrogen atoms to be trapped, and held for much longer times. We have identified antihydrogen atoms that have been trapped for at least 1,000 s in the apparatus (Andresen et al., Nature Physics 7:558, 2011). This is more than sufficient time to interrogate the atoms spectroscopically, as well as to ensure that they have relaxed to their ground state.

  17. Native pyroglutamation of huwentoxin-IV: a post-translational modification that increases the trapping ability to the sodium channel.

    Directory of Open Access Journals (Sweden)

    Mingqiang Rong

    Full Text Available Huwentoxin-IV (HWTX-IV, a tetrodotoxin-sensitive (TTX-s sodium channel antagonist, is found in the venom of the Chinese spider Ornithoctonus huwena. A naturally modified HWTX-IV (mHWTX-IV, having a molecular mass 18 Da lower than HWTX-IV, has also been isolated from the venom of the same spider. By a combination of enzymatic fragmentation and MS/MS de novo sequencing, mHWTX-IV has been shown to have the same amino acid sequence as that of HWTX-IV, except that the N-terminal glutamic acid replaced by pyroglutamic acid. mHWTX-IV inhibited tetrodotoxin-sensitive voltage-gated sodium channels of dorsal root ganglion neurons with an IC50 nearly equal to native HWTX-IV. mHWTX-IV showed the same activation and inactivation kinetics seen for native HWTX-IV. In contrast with HWTX-IV, which dissociates at moderate voltage depolarization voltages (+50 mV, 180000 ms, mHWTX-IV inhibition of TTX-sensitive sodium channels is not reversed by strong depolarization voltages (+200 mV, 500 ms. Recovery of Nav1.7current was voltage-dependent and was induced by extreme depolarization in the presence of HWTX-IV, but no obvious current was elicited after application of mHWTX-IV. Our data indicate that the N-terminal modification of HWTX-IV gives the peptide toxin a greater ability to trap the voltage sensor in the sodium channel. Loss of a negative charge, caused by cyclization at the N-terminus, is a possible reason why the modified toxin binds much stronger. To our knowledge, this is the first report of a pyroglutamic acid residue in a spider toxin; this modification seems to increase the trapping ability of the voltage sensor in the sodium channel.

  18. The electric field effect on the sensitivity of tin oxide gas sensors on nanostructured substrates at low temperature

    Directory of Open Access Journals (Sweden)

    Haizhou Ren

    2014-10-01

    Full Text Available A novel low-temperature SnO2 gas sensor was prepared and studied on silicon nanostructures formed by femtosecond laser irradiation. By applying a bias voltage on the silicon substrate to alter the charge distribution on the surface of the SnO2, carbon monoxide (CO, and ammonia (NH3 gas can be distinguished by the same sensor at room temperature. The experimental results are explained with a mechanism that the sensor works at low temperature because of adsorption of gas molecules that trap electrons to the surface of the SnO2.

  19. Active Stabilization of Ion Trap Radiofrequency Potentials

    CERN Document Server

    Johnson, K G; Neyenhuis, B; Mizrahi, J; Monroe, C

    2016-01-01

    We actively stabilize the harmonic oscillation frequency of a laser-cooled atomic ion confined in a rf Paul trap by sampling and rectifying the high voltage rf applied to the trap electrodes. We are able to stabilize the 1 MHz atomic oscillation frequency to better than 10 Hz, or 10 ppm. This represents a suppression of ambient noise on the rf circuit by 34 dB. This technique could impact the sensitivity of ion trap mass spectrometry and the fidelity of quantum operations in ion trap quantum information applications.

  20. Detection Method of High Voltage Circuit Breaker and Its Application Based on Ultrasonic Sensor%基于超声波传感器的高压断路器检测方法及应用

    Institute of Scientific and Technical Information of China (English)

    程旭东; 王兰芳

    2011-01-01

    In order to improve the efficiency and precision of velocity detection of High voltage circuit breaker (HVCB), a detection method based on ultrasonic sensor is proposed. The TR40 series of ultrasonic transducer is adopted to generate ultrasonic signals. The emission sensor is fixed on the breaker's closing/opening connection rod while receiving sensor installed in the universal triangular bracket. By measuring the frequency difference between emission signals and receiving signals, instantaneous velocity of the current circuit breaker operation can be calculated. Furthermore, a mechanical characteristic detection instrument for HVCB is developed. Field test results show that the ultrasonic sensor is convenient to be installed and the results has high accuracy and small uncertainty, which satisfies the field test requirements for velocity detection of HVCB.%为提高高压断路器速度检测效率与精度,提出了一种基于超声波传感器的高压断路器速度检测方法,利用TR40系列超声波换能器产生超声波信号,将发射传感器固定于断路器合/分连接杆上,接收传感器安装在万能三角支架上,通过统计接收和发送信号的频率差,计算当前断路器运行的瞬时速度,并在此基础上开发了断路器机械特性测试仪.现场试验结果表明,超声波传感器安装方便、测试数据精度较高、不确定度小,能满足高压断路器现场速度检测的需求.

  1. A Disease Mutation Causing Episodic Ataxia Type I in the S1 Links Directly to the Voltage Sensor and the Selectivity Filter in Kv Channels.

    Science.gov (United States)

    Petitjean, Dimitri; Kalstrup, Tanja; Zhao, Juan; Blunck, Rikard

    2015-09-02

    The mutation F184C in Kv1.1 leads to development of episodic ataxia type I (EA1). Although the mutation has been said to alter activation kinetics and to lower expression, we show here that the underlying molecular mechanisms may be more complex. Although F184 is positioned in the "peripheral" S1 helix, it occupies a central position in the 3D fold. We show in cut-open oocyte voltage-clamp recordings of gating and ionic currents of the Shaker Kv channel expressed in Xenopus oocytes that F184 not only interacts directly with the gating charges of the S4, but also creates a functional link to the selectivity filter of the neighboring subunit. This link leads to impaired fast and slow inactivation. The effect on fast inactivation is of an allosteric nature considering that fast inactivation is caused by a linked cytosolic ball peptide. The extensive effects of F184C provide a new mechanism underlying EA. Episodic ataxia (EA) is an inherited disease that leads to occasional loss of motor control in combination with variable other symptoms such as vertigo or migraine. EA type I (EA1), studied here, is caused by mutations in a voltage-gated potassium channel that contributes to the generation of electrical signals in the brain. The mechanism by which mutations in voltage-gated potassium channels lead to EA is still unknown and there is no consistent pharmacological treatment. By studying in detail one disease-causing mutation in Kv1.1, we describe a novel molecular mechanism distinct from mechanisms described previously. This mechanism contributes to the understanding of potassium channel function in general and might lead to a better understanding of how EA develops. Copyright © 2015 the authors 0270-6474/15/3512198-09$15.00/0.

  2. Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping

    Science.gov (United States)

    Yen, Cheng-Tyng; Hung, Chien-Chung; Hung, Hsiang-Ting; Lee, Chwan-Ying; Lee, Lurng-Shehng; Huang, Yao-Feng; Hsu, Fu-Jen

    2016-01-01

    We investigated the negative bias temperature instability (NBTI) characteristics of 4H-SiC metal oxide semiconductor field effect transistor (MOSFET) and metal oxide semiconductor capacitor (MOSCAP). The shift of threshold voltage approached saturation with time, and the different magnitude of mid-gap voltage shift with different starting biases observed in capacitance-voltage (CV) curves taken from MOSCAP and MOSFET suggested that the hole trapping was the primary mechanism contributing to the NBTI in this study. The trend of mid-gap voltage shift with starting bias and threshold voltage shift with stress bias showed steep change before -10 V and approached saturation after -10 V which can be explained by a process where the hole trapping was assisted by positively charged interface states. The positively charged interface states may have acted as an intermediate state which reduced the overall energy barrier and facilitated the process of hole trapping. The split-CV sweeps with 0 s and 655 s of hold time were essentially overlapped which was consistent with the time evolution characteristic of hole trapping and supported the interface trap assisted hole trapping mechanism.

  3. High Voltage Switchgear Temperature Acquisition System Based on SAW Sensor Technology Analysis%基于 SAW 传感器技术的高压开关柜温度采集系统设计分析

    Institute of Scientific and Technical Information of China (English)

    郭翠玲; 高丽

    2015-01-01

    根据传统高压开关柜温度采集方法的不足,采用 SAW 传感器技术对高压开关柜进行无源无线温度采集。该系统具有温度测量、报警功能、参数设定、数据存储等功能,对温度进行远程实时在线监测,是智能电网建设的重要依据。%Based on the shortcomings of the traditional method of temperature measurement of high voltage switchgear ,the paper uses SAW sensor technology to take passive wireless temperature measurement for high voltage switchgear .T he system ,w hich has temperature measurement ,alarm function ,parameter setting ,data storage and other functions that can take real - time remote temperature online monito‐ring ,is an important basis for smart grid construction .

  4. The dipeptidyl-aminopeptidase-like protein 6 is an integral voltage sensor-interacting beta-subunit of neuronal K(V)4.2 channels.

    Science.gov (United States)

    Dougherty, Kevin; Tu, Liwei; Deutsch, Carol; Covarrubias, Manuel

    2009-01-01

    Auxiliary beta-subunits dictate the physiological properties of voltage-gated K(+) (K(V)) channels in excitable tissues. In many instances, however, the underlying mechanisms of action are poorly understood. The dipeptidyl-aminopeptidase-like protein 6 (DPP6) is a specific beta-subunit of neuronal K(V)4 channels, which may promote gating through interactions between the single transmembrane segment of DPP6 and the channel's voltage sensing domain (VSD). A combination of gating current measurements and protein biochemistry (in-vitro translation and co-immunoprecipitations) revealed preferential physical interaction between the isolated K(V)4.2-VSD and DPP6. Significantly weaker interactions were detected between DPP6 and K(V)1.3 channels or the K(V)4.2 pore domain. More efficient gating charge movement resulting from a direct interaction between DPP6 and the K(V)4.2-VSD is unique among the known actions of K(V) channel beta-subunits. This study shows that the modular VSD of a K(V) channel can be directly regulated by transmembrane protein-protein interactions involving an extrinsic beta-subunit. Understanding these interactions may shed light on the pathophysiology of recently identified human disorders associated with mutations affecting the dpp6 gene.

  5. Scorpion beta-toxins and voltage-gated sodium channels: interactions and effects.

    Science.gov (United States)

    Pedraza Escalona, Martha; Possani, Lourival D

    2013-01-01

    Scorpion beta-toxins (beta-ScTxs) modify the activity of voltage-gated sodium (Nav) channels, thereby producing neurotoxic effects in diverse organisms. For this reason, beta-ScTxs are essential tools not only for discriminating among different channel sub-types but also for studying the mechanisms of channel gating and the structure-function relationship involved in this process. This review considers both the structural and the functional implications of the beta-ScTxs after they bind to their receptor sites, in accord with their classification into a) anti-mammalian beta-ScTxs, b) anti-insect selective excitatory beta-ScTxs, c) anti-insect selective depressant beta-ScTxs and d) beta-ScTxs active on both insect and mammals Nav channels. Additionally, the molecular mechanism of toxin action by the "voltage sensor trapping" model is discussed, and the systemic effects produced by these toxins are reviewed.

  6. Trapped antihydrogen

    CERN Document Server

    Butler, E; Ashkezari, M D; Baquero-Ruiz, M; Bertsche, W; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Deller, A; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M C; Gill, D R; Gutierrez, A; Hangst, J S; Hardy, W N; Hayden, M E; Humphries, A J; Hydomako, R; Jenkins, M J; Jonsell, S; Jørgensen, L V; Kemp, S L; Kurchaninov, L; Madsen, N; Menary, S; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Pusa, P; Rasmussen, C Ø; Robicheaux, F; Sarid, E; Seif el Nasr, S; Silveira, D M; So, C; Storey, J W; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki,Y

    2012-01-01

    Precision spectroscopic comparison of hydrogen and antihydrogen holds the promise of a sensitive test of the Charge-Parity-Time theorem and matter-antimatter equivalence. The clearest path towards realising this goal is to hold a sample of antihydrogen in an atomic trap for interrogation by electromagnetic radiation. Achieving this poses a huge experimental challenge, as state-of-the-art magnetic-minimum atom traps have well depths of only ∼1 T (∼0.5 K for ground state antihydrogen atoms). The atoms annihilate on contact with matter and must be ‘born’ inside the magnetic trap with low kinetic energies. At the ALPHA experiment, antihydrogen atoms are produced from antiprotons and positrons stored in the form of non-neutral plasmas, where the typical electrostatic potential energy per particle is on the order of electronvolts, more than 104 times the maximum trappable kinetic energy. In November 2010, ALPHA published the observation of 38 antiproton annihilations due to antihydrogen atoms that had been ...

  7. Voltage-dependent gating of hERG potassium channels

    Directory of Open Access Journals (Sweden)

    Yen May eCheng

    2012-05-01

    Full Text Available The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4-S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-a-go-go related gene, hERG, which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure-function relationships underlying voltage-dependent gating in Shaker and hERG channels, with a focus on the roles of the voltage sensing domain and the S4-S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter charge interactions. More recent data suggest that key amino acid differences in the hERG voltage sensing unit and S4-S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor.

  8. Use-dependent block of the voltage-gated Na(+) channel by tetrodotoxin and saxitoxin: effect of pore mutations that change ionic selectivity.

    Science.gov (United States)

    Huang, Chien-Jung; Schild, Laurent; Moczydlowski, Edward G

    2012-10-01

    Voltage-gated Na(+) channels (NaV channels) are specifically blocked by guanidinium toxins such as tetrodotoxin (TTX) and saxitoxin (STX) with nanomolar to micromolar affinity depending on key amino acid substitutions in the outer vestibule of the channel that vary with NaV gene isoforms. All NaV channels that have been studied exhibit a use-dependent enhancement of TTX/STX affinity when the channel is stimulated with brief repetitive voltage depolarizations from a hyperpolarized starting voltage. Two models have been proposed to explain the mechanism of TTX/STX use dependence: a conformational mechanism and a trapped ion mechanism. In this study, we used selectivity filter mutations (K1237R, K1237A, and K1237H) of the rat muscle NaV1.4 channel that are known to alter ionic selectivity and Ca(2+) permeability to test the trapped ion mechanism, which attributes use-dependent enhancement of toxin affinity to electrostatic repulsion between the bound toxin and Ca(2+) or Na(+) ions trapped inside the channel vestibule in the closed state. Our results indicate that TTX/STX use dependence is not relieved by mutations that enhance Ca(2+) permeability, suggesting that ion-toxin repulsion is not the primary factor that determines use dependence. Evidence now favors the idea that TTX/STX use dependence arises from conformational coupling of the voltage sensor domain or domains with residues in the toxin-binding site that are also involved in slow inactivation.

  9. Traps in Zirconium Alloys Oxide Layers

    Directory of Open Access Journals (Sweden)

    Helmar Frank

    2005-01-01

    Full Text Available Oxide films long-time grown on tubes of three types of zirconium alloys in water and in steam were investigated, by analysing I-V characteristic measured at constant voltages with various temperatures. Using theoretical concepts of Rose [3] and Gould [5], ZryNbSn(Fe proved to have an exponential distribution of trapping centers below the conduction band edge, wheras Zr1Nb and IMP Zry-4 proved to have single energy trap levels.

  10. Modeling and Optimizing RF Multipole Ion Traps

    Science.gov (United States)

    Fanghaenel, Sven; Asvany, Oskar; Schlemmer, Stephan

    2016-06-01

    Radio frequency (rf) ion traps are very well suited for spectroscopy experiments thanks to the long time storage of the species of interest in a well defined volume. The electrical potential of the ion trap is determined by the geometry of its electrodes and the applied voltages. In order to understand the behavior of trapped ions in realistic multipole traps it is necessary to characterize these trapping potentials. Commercial programs like SIMION or COMSOL, employing the finite difference and/or finite element method, are often used to model the electrical fields of the trap in order to design traps for various purposes, e.g. introducing light from a laser into the trap volume. For a controlled trapping of ions, e.g. for low temperature trapping, the time dependent electrical fields need to be known to high accuracy especially at the minimum of the effective (mechanical) potential. The commercial programs are not optimized for these applications and suffer from a number of limitations. Therefore, in our approach the boundary element method (BEM) has been employed in home-built programs to generate numerical solutions of real trap geometries, e.g. from CAD drawings. In addition the resulting fields are described by appropriate multipole expansions. As a consequence, the quality of a trap can be characterized by a small set of multipole parameters which are used to optimize the trap design. In this presentation a few example calculations will be discussed. In particular the accuracy of the method and the benefits of describing the trapping potentials via multipole expansions will be illustrated. As one important application heating effects of cold ions arising from non-ideal multipole fields can now be understood as a consequence of imperfect field configurations.

  11. Beta-scorpion toxin effects suggest electrostatic interactions in domain II of voltage-dependent sodium channels. : Electrostatic interactions between segments IIS2, IIS3 and IIS4 of Na+ channel.

    OpenAIRE

    Mantegazza, Massimo; Cestèle, Sandrine

    2005-01-01

    International audience; Beta-scorpion toxins specifically modulate the voltage dependence of sodium channel activation by acting through a voltage-sensor trapping model. We used mutagenesis, functional analysis and the action of beta-toxin as tools to investigate the existence and role in channel activation of molecular interactions between the charged residues of the S2, S3 and S4 segments in domain II of sodium channels. Mutating to arginine the acidic residues of the S2 and S3 transmembran...

  12. VACUUM TRAP

    Science.gov (United States)

    Gordon, H.S.

    1959-09-15

    An improved adsorption vacuum trap for use in vacuum systems was designed. The distinguishing feature is the placement of a plurality of torsionally deformed metallic fins within a vacuum jacket extending from the walls to the central axis so that substantially all gas molecules pass through the jacket will impinge upon the fin surfaces. T fins are heated by direct metallic conduction, thereby ol taining a uniform temperature at the adeorbing surfaces so that essentially all of the condensible impurities from the evacuating gas are removed from the vacuum system.

  13. Subpicosecond oxygen trapping in the heme pocket of the oxygen sensor FixL observed by time-resolved resonance Raman spectroscopy.

    Science.gov (United States)

    Kruglik, Sergei G; Jasaitis, Audrius; Hola, Klara; Yamashita, Taku; Liebl, Ursula; Martin, Jean-Louis; Vos, Marten H

    2007-05-01

    Dissociation of oxygen from the heme domain of the bacterial oxygen sensor protein FixL constitutes the first step in hypoxia-induced signaling. In the present study, the photodissociation of the heme-O2 bond was used to synchronize this event, and time-resolved resonance Raman (TR(3)) spectroscopy with subpicosecond time resolution was implemented to characterize the heme configuration of the primary photoproduct. TR(3) measurements on heme-oxycomplexes are highly challenging and have not yet been reported. Whereas in all other known six-coordinated heme protein complexes with diatomic ligands, including the oxymyoglobin reported here, heme iron out-of-plane motion (doming) occurs faster than 1 ps after iron-ligand bond breaking; surprisingly, no sizeable doming is observed in the oxycomplex of the Bradyrhizobium japonicum FixL sensor domain (FixLH). This assessment is deduced from the absence of the iron-histidine band around 217 cm(-1) as early as 0.5 ps. We suggest that efficient ultrafast oxygen rebinding to the heme occurs on the femtosecond time scale, thus hindering heme doming. Comparing WT oxy-FixLH, mutant proteins FixLH-R220H and FixLH-R220Q, the respective carbonmonoxy-complexes, and oxymyoglobin, we show that a hydrogen bond of the terminal oxygen atom with the residue in position 220 is responsible for the observed behavior; in WT FixL this residue is arginine, crucially implicated in signal transmission. We propose that the rigid O2 configuration imposed by this residue, in combination with the hydrophobic and constrained properties of the distal cavity, keep dissociated oxygen in place. These results uncover the origin of the "oxygen cage" properties of this oxygen sensor protein.

  14. Accurate Switched-Voltage voltage averaging circuit

    OpenAIRE

    金光, 一幸; 松本, 寛樹

    2006-01-01

    Abstract ###This paper proposes an accurate Switched-Voltage (SV) voltage averaging circuit. It is presented ###to compensated for NMOS missmatch error at MOS differential type voltage averaging circuit. ###The proposed circuit consists of a voltage averaging and a SV sample/hold (S/H) circuit. It can ###operate using nonoverlapping three phase clocks. Performance of this circuit is verified by PSpice ###simulations.

  15. Trapped phonons

    CERN Document Server

    Mannarelli, Massimo

    2013-01-01

    We analyze the effect of restricted geometries on the contribution of Nambu-Goldstone bosons (phonons) to the shear viscosity, $\\eta$, of a superfluid. For illustrative purpose we examine a simplified system consisting of a circular boundary of radius $R$, confining a two-dimensional rarefied gas of phonons. Considering the Maxwell-type conditions, we show that phonons that are not in equilibrium with the boundary and that are not specularly reflected exert a shear stress on the boundary. In this case it is possible to define an effective (ballistic) shear viscosity coefficient $\\eta \\propto \\rho_{\\rm ph} \\chi R$, where $\\rho_{\\rm ph}$ is the density of phonons and $\\chi$ is a parameter which characterizes the type of scattering at the boundary. For an optically trapped superfluid our results corroborate the findings of Refs. \\cite{Mannarelli:2012su, Mannarelli:2012eg}, which imply that at very low temperature the shear viscosity correlates with the size of the optical trap and decreases with decreasing tempe...

  16. A battery-based, low-noise voltage source

    Science.gov (United States)

    Wagner, Anke; Sturm, Sven; Schabinger, Birgit; Blaum, Klaus; Quint, Wolfgang

    2010-06-01

    A highly stable, low-noise voltage source was designed to improve the stability of the electrode bias voltages of a Penning trap. To avoid excess noise and ground loops, the voltage source is completely independent of the public electric network and uses a 12 V car battery to generate output voltages of ±15 and ±5 V. First, the dc supply voltage is converted into ac-voltage and gets amplified. Afterwards, the signal is rectified, filtered, and regulated to the desired output value. Each channel can deliver up to 1.5 A. The current as well as the battery voltage and the output voltages can be read out via a universal serial bus (USB) connection for monitoring purposes. With the presented design, a relative voltage stability of 7×10-7 over 6.5 h and a noise level equal or smaller than 30 nV/√Hz is achieved.

  17. Membrane-perturbing properties of two Arg-rich paddle domains from voltage-gated sensors in the KvAP and HsapBK K(+) channels.

    Science.gov (United States)

    Unnerståle, Sofia; Madani, Fatemeh; Gräslund, Astrid; Mäler, Lena

    2012-05-15

    Voltage-gated K(+) channels are gated by displacement of basic residues located in the S4 helix that together with a part of the S3 helix, S3b, forms a "paddle" domain, whose position is altered by changes in the membrane potential modulating the open probability of the channel. Here, interactions between two paddle domains, KvAPp from the K(v) channel from Aeropyrum pernix and HsapBKp from the BK channel from Homo sapiens, and membrane models have been studied by spectroscopy. We show that both paddle domains induce calcein leakage in large unilamellar vesicles, and we suggest that this leakage represents a general thinning of the bilayer, making movement of the whole paddle domain plausible. The fact that HsapBKp induces more leakage than KvAPp may be explained by the presence of a Trp residue in HsapBKp. Trp residues generally promote localization to the hydrophilic-hydrophobic interface and disturb tight packing. In magnetically aligned bicelles, KvAPp increases the level of order along the whole acyl chain, while HsapBKp affects the morphology, also indicating that KvAPp adapts more to the lipid environment. Nuclear magnetic resonance (NMR) relaxation measurements for HsapBKp show that overall the sequence has anisotropic motions. The S4 helix is well-structured with restricted local motion, while the turn between S4 and S3b is more flexible and undergoes slow local motion. Our results indicate that the calcein leakage is related to the flexibility in this turn region. A possibility by which HsapBKp can undergo structural transitions is also shown by relaxation NMR, which may be important for the gating mechanism.

  18. Characterisation of the VELO High Voltage System

    CERN Document Server

    Rakotomiaramanana, B; Eklund, L

    2008-01-01

    The high voltage system supplies the bias voltage to the 88 silicon sensors which comprise the LHCb Vertex Locator (VELO). This note describes the results of the tests which have been performed on the hardware of the high voltage system of the VELO. Each individual test detailed in this note corresponds to a specific requirement of the system. These requirements arise primarily from ensuring the safety of the silicon sensors and the quality of the data taken from the VELO modules. The tests performed are in four categories: normal operation of the high voltage system; vercation of its stability under operation; discussion of its behaviour in failure modes; and details of operation at low voltage. Noteworthy issues, identified through the tests, include the behaviour of the high voltage modules at voltages below 9V, the current limit that can be applied during ramping of the voltage, and the speed with which the voltage is cut during failures of the system. The results of these tests provide high confidence th...

  19. Characterisation of the VELO High Voltage System

    CERN Document Server

    Rakotomiaramanana, B; Parkes, C; Eklund, L

    2008-01-01

    The high voltage system supplies the bias voltage to the 88 silicon sensors which comprise the LHCb Vertex Locator (VELO). This note describes the results of the tests which have been performed on the hardware of the high voltage system of the VELO. Each individual test detailed in this note corresponds to a specific requirement of the system. These requirements arise primarily from ensuring the safety of the silicon sensors and the quality of the data taken from the VELO modules. The tests performed are in four categories: normal operation of the high voltage system; verification of its stability under operation; discussion of its behaviour in failure modes; and details of operation at low voltage. Noteworthy issues, identified through the tests, include the behaviour of the high voltage modules at voltages below 9V, the current limit that can be applied during ramping of the voltage, and the speed with which the voltage is cut during failures of the system. The results of these tests provide high confidence...

  20. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    Directory of Open Access Journals (Sweden)

    Nazek El-Atab

    2013-11-01

    Full Text Available A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO2 layer is deposited between Atomic Layer Deposition (ALD steps. A threshold voltage (Vt shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V Vt shift, the memory with CrO2 layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO2 layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  1. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    Energy Technology Data Exchange (ETDEWEB)

    El-Atab, Nazek; Rizk, Ayman; Nayfeh, Ammar [Institute Center for Microsystems – iMicro, Department of Electrical Engineering and Computer Science (EECS), Masdar Institute of Science and Technology Abu Dhabi (United Arab Emirates); Okyay, Ali K. [Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara (Turkey); UNAM-National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey)

    2013-11-15

    A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO{sub 2} layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (V{sub t}) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V V{sub t} shift, the memory with CrO{sub 2} layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO{sub 2} layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  2. Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

    Science.gov (United States)

    El-Atab, Nazek; Rizk, Ayman; Okyay, Ali K.; Nayfeh, Ammar

    2013-11-01

    A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO2 layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (Vt) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V Vt shift, the memory with CrO2 layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO2 layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.

  3. X-ray radiation damage studies and design of a silicon pixel sensor for science at the XFEL

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiaguo

    2013-06-15

    Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of Xray radiation damage up to these high doses, MOS capacitors and gate-controlled diodes built on high resistivity n-doped silicon with crystal orientations left angle 100 right angle and left angle 111 right angle produced by four vendors, CiS, Hamamatsu, Canberra and Sintef have been irradiated with 12 keV X-rays at the DESY DORIS III synchrotron-light source. Using capacitance/ conductance-voltage, current-voltage and thermal dielectric relaxation current measurements, the densities of oxide charges and interface traps at the Si-SiO{sub 2} interface, and the surface-current densities have been determined as function of dose. Results indicate that the dose dependence of the oxide-charge density, the interface-trap density and the surface-current density depend on the crystal orientation and producer. In addition, the influence of the voltage applied to the gates of the MOS capacitor and the gate-controlled diode during X-ray irradiation on the oxide-charge density, the interface-trap density and the surface-current density has been investigated at doses of 100 kGy and 100 MGy. It is found that both strongly depend on the gate voltage if the electric field in the oxide points from the surface of the SiO{sub 2} to the Si-SiO{sub 2} interface. To verify the long-term stability of irradiated silicon sensors, annealing studies have been performed at 60 C and 80 C on MOS capacitors and gate-controlled diodes irradiated to 5 MGy as well, and the annealing kinetics of oxide charges and surface current were determined. Moreover, the macroscopic electrical properties of segmented sensors have slao been investigated as function of dose. It is found that the defects introduced by X-rays increase the full depletion voltage, the surface leakage current and the inter-electrode capacitance of the segmented sensor. An

  4. Experimental validation of a high voltage pulse measurement method.

    Energy Technology Data Exchange (ETDEWEB)

    Cular, Stefan; Patel, Nishant Bhupendra; Branch, Darren W.

    2013-09-01

    This report describes X-cut lithium niobates (LiNbO3) utilization for voltage sensing by monitoring the acoustic wave propagation changes through LiNbO3 resulting from applied voltage. Direct current (DC), alternating current (AC) and pulsed voltage signals were applied to the crystal. Voltage induced shift in acoustic wave propagation time scaled quadratically for DC and AC voltages and linearly for pulsed voltages. The measured values ranged from 10 - 273 ps and 189 ps 2 ns for DC and non-DC voltages, respectively. Data suggests LiNbO3 has a frequency sensitive response to voltage. If voltage source error is eliminated through physical modeling from the uncertainty budget, the sensors U95 estimated combined uncertainty could decrease to ~0.025% for DC, AC, and pulsed voltage measurements.

  5. The Voltage-Dependent Anion Channel 1 (AtVDAC1 Negatively Regulates Plant Cold Responses during Germination and Seedling Development in Arabidopsis and Interacts with Calcium Sensor CBL1

    Directory of Open Access Journals (Sweden)

    Zhi-Yong Li

    2013-01-01

    Full Text Available The voltage-dependent anion channel (VDAC, a highly conserved major mitochondrial outer membrane protein, plays crucial roles in energy metabolism and metabolite transport. However, knowledge about the roles of the VDAC family in plants is limited. In this study, we investigated the expression pattern of VDAC1 in Arabidopsis and found that cold stress promoted the accumulation of VDAC1 transcripts in imbibed seeds and mature plants. Overexpression of VDAC1 reduced tolerance to cold stress in Arabidopsis. Phenotype analysis of VDAC1 T-DNA insertion mutant plants indicated that a vdac1 mutant line had faster germination kinetics under cold treatment and showed enhanced tolerance to freezing. The yeast two-hybrid system revealed that VDAC1 interacts with CBL1, a calcium sensor in plants. Like the vdac1, a cbl1 mutant also exhibited a higher seed germination rate. We conclude that both VDAC1 and CBL1 regulate cold stress responses during seed germination and plant development.

  6. Annual Trapping Proposal 1985

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This Annual Trapping Plan for the 1984-1985 trapping season at Clarence Cannon NWR outlines rules and regulations for the trapping of beaver and muskrat on the...

  7. The Electronic McPhail Trap

    Directory of Open Access Journals (Sweden)

    Ilyas Potamitis

    2014-11-01

    Full Text Available Certain insects affect cultivations in a detrimental way. A notable case is the olive fruit fly (Bactrocera oleae (Rossi, that in Europe alone causes billions of euros in crop-loss/per year. Pests can be controlled with aerial and ground bait pesticide sprays, the efficiency of which depends on knowing the time and location of insect infestations as early as possible. The inspection of traps is currently carried out manually. Automatic monitoring traps can enhance efficient monitoring of flying pests by identifying and counting targeted pests as they enter the trap. This work deals with the hardware setup of an insect trap with an embedded optoelectronic sensor that automatically records insects as they fly in the trap. The sensor responsible for detecting the insect is an array of phototransistors receiving light from an infrared LED. The wing-beat recording is based on the interruption of the emitted light due to the partial occlusion from insect’s wings as they fly in the trap. We show that the recordings are of high quality paving the way for automatic recognition and transmission of insect detections from the field to a smartphone. This work emphasizes the hardware implementation of the sensor and the detection/counting module giving all necessary implementation details needed to construct it.

  8. Optical Tweezers and Optical Trapping Improved for Future Automated Micromanipulation and Characterization

    Science.gov (United States)

    Wrbanek, Susan Y.; Decker, Arthur J.

    2005-01-01

    Optical trap arrays are being developed at the NASA Glenn Research Center for holding, manipulating, and optically interrogating arrays of nanotube sensors. The trap arrays, for example, might be used to arrange arrays of chemical sensors for insertion onto a chip in liquid, air, and vacuum environments. Neural-network-controlled spatial light modulators (SLMs) are to generate and control the trap positions and trap profiles in three dimensions.

  9. Mechanism of electromechanical coupling in voltage-gated potassium channels

    Directory of Open Access Journals (Sweden)

    Rikard eBlunck

    2012-09-01

    Full Text Available Voltage-gated ion channels play a central role in the generation of action potentials in the nervous system. They are selective for one type of ion – sodium, calcium or potassium. Voltage-gated ion channels are composed of a central pore that allows ions to pass through the membrane and four peripheral voltage sensing domains that respond to changes in the membrane potential. Upon depolarization, voltage sensors in voltage-gated potassium channels (Kv undergo conformational changes driven by positive charges in the S4 segment and aided by pairwise electrostatic interactions with the surrounding voltage sensor. Structure-function relations of Kv channels have been investigated in detail, and the resulting models on the movement of the voltage sensors now converge to a consensus; the S4 segment undergoes a combined movement of rotation, tilt and vertical displacement in order to bring 3-4 e+ each through the electric field focused in this region. Nevertheless, the mechanism by which the voltage sensor movement leads to pore opening, the electromechanical coupling, is still not fully understood. Thus, recently, electromechanical coupling in different Kv channels has been investigated with a multitude of techniques including electrophysiology, 3D crystal structures, fluorescence spectroscopy and molecular dynamics simulations. Evidently, the S4-S5 linker, the covalent link between the voltage sensor and pore, plays a crucial role. The linker transfers the energy from the voltage sensor movement to the pore domain via an interaction with the S6 C-termini, which are pulled open during gating. In addition, other contact regions have been proposed. This review aims to provide (i an in-depth comparison of the molecular mechanisms of electromechanical coupling in different Kv channels; (ii insight as to how the voltage sensor and pore domain influence one another; and (iii theoretical predictions on the movement of the cytosolic face of the KV channels

  10. Steerable Capacitive Proximity Sensor

    Science.gov (United States)

    Jenstrom, Del T.; Mcconnell, Robert L.

    1994-01-01

    Steerable capacitive proximity sensor of "capaciflector" type based partly on sensing units described in GSC-13377 and GSC-13475. Position of maximum sensitivity adjusted without moving sensor. Voltage of each driven shield adjusted separately to concentrate sensing electric field more toward one side or other.

  11. Detection of Isotopes of Mercury Ions by Resonant Ejection in Paul Trap

    Institute of Scientific and Technical Information of China (English)

    WANG Wen-Ming; SHE Lei; LI Jiao-Mei; GAO Ke-Lin

    2007-01-01

    A simple method to detect mercury ions confined in a Paul trap has been developed by resonant ejection. In this method, frequency of the additional ejection ac voltage is scanned instead of the amplitude of the rf drive voltage in conventional methods. It is possible not only to observe the spectra of the secular oscillation of the trapped ions directly, but also to eject the confined ions from the trap mass-selectively.

  12. Trap-assisted tunneling in AlGaN avalanche photodiodes

    Directory of Open Access Journals (Sweden)

    Z. G. Shao

    2017-06-01

    Full Text Available We fabricated AlGaN solar-blind avalanche photodiodes (APDs that were based on separate absorption and multiplication (SAM structures. It was determined experimentally that the dark current in these APDs is rapidly enhanced when the applied voltage exceeds 52 V. Theoretical analyses demonstrated that the breakdown voltage at 52 V is mainly related to the local trap-assisted tunneling effect. Because the dark current is mainly dependent on the trap states as a result of modification of the lifetimes of the electrons in the trap states, the tunneling processes can be modulated effectively by tuning the trap energy level, the trap density, and the tunnel mass.

  13. Trap-assisted tunneling in AlGaN avalanche photodiodes

    Science.gov (United States)

    Shao, Z. G.; Gu, Q. J.; Yang, X. F.; Zhang, J.; Kuang, Y. W.; Zhang, D. B.; Yu, H. L.; Hong, X. K.; Feng, J. F.; Liu, Y. S.

    2017-06-01

    We fabricated AlGaN solar-blind avalanche photodiodes (APDs) that were based on separate absorption and multiplication (SAM) structures. It was determined experimentally that the dark current in these APDs is rapidly enhanced when the applied voltage exceeds 52 V. Theoretical analyses demonstrated that the breakdown voltage at 52 V is mainly related to the local trap-assisted tunneling effect. Because the dark current is mainly dependent on the trap states as a result of modification of the lifetimes of the electrons in the trap states, the tunneling processes can be modulated effectively by tuning the trap energy level, the trap density, and the tunnel mass.

  14. Characteristics of non-irradiated and irradiated double SOI integration type pixel sensor

    Science.gov (United States)

    Asano, M.; Sekigawa, D.; Hara, K.; Aoyagi, W.; Honda, S.; Tobita, N.; Arai, Y.; Miyoshi, T.; Kurachi, I.; Tsuboyama, T.; Yamada, M.

    2016-09-01

    We are developing monolithic pixel sensors based on a 0.2 μm fully depleted silicon-on-insulator (FD-SOI) technology for high-energy physics experiment applications. With this SOI technology, the wafer resistivities for the electronics and sensor parts can be chosen separately. Therefore, a device with full depletion and fast charge collection is realized. The total ionizing dose (TID) effect is the major challenge for application in hard radiation environments. To compensate for TID damage, we introduced a double SOI structure that implements an additional middle silicon layer (SOI2 layer). Applying a negative voltage to the SOI2 layer should compensate for the effects induced by holes trapped in the buried oxide layers. We studied the recovery from TID damage induced by 60Co γ and other characteristics of the integration-type double SOI sensor INTPIXh2. When the double SOI sensor was irradiated to 100 kGy, it showed a response to the infrared laser similar to that of a non-irradiated sensor when we applied a negative voltage to the SOI2 layer. Thus, we concluded that the double SOI sensor is very effective at sufficiently enhancing the radiation hardness for application in experiments with harsh radiation environments, such as at Belle II or ILC.

  15. Characteristics of non-irradiated and irradiated double SOI integration type pixel sensor

    Energy Technology Data Exchange (ETDEWEB)

    Asano, M.; Sekigawa, D. [Institute of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8751 (Japan); Hara, K., E-mail: hara@hep.px.tsukuba.ac.jp [Institute of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8751 (Japan); Center for Integrated Research in Fundamental Science and Engineering, University of Tsukuba, Tsukuba, Ibaraki 305-8571 (Japan); Aoyagi, W.; Honda, S.; Tobita, N. [Institute of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8751 (Japan); Arai, Y.; Miyoshi, T.; Kurachi, I.; Tsuboyama, T.; Yamada, M. [Institute of Particle and Nuclear Study, KEK, Oho 1-1, Tsukuba, Ibaraki 305-0801 (Japan)

    2016-09-21

    We are developing monolithic pixel sensors based on a 0.2 μm fully depleted silicon-on-insulator (FD-SOI) technology for high-energy physics experiment applications. With this SOI technology, the wafer resistivities for the electronics and sensor parts can be chosen separately. Therefore, a device with full depletion and fast charge collection is realized. The total ionizing dose (TID) effect is the major challenge for application in hard radiation environments. To compensate for TID damage, we introduced a double SOI structure that implements an additional middle silicon layer (SOI2 layer). Applying a negative voltage to the SOI2 layer should compensate for the effects induced by holes trapped in the buried oxide layers. We studied the recovery from TID damage induced by {sup 60}Co γ and other characteristics of the integration-type double SOI sensor INTPIXh2. When the double SOI sensor was irradiated to 100 kGy, it showed a response to the infrared laser similar to that of a non-irradiated sensor when we applied a negative voltage to the SOI2 layer. Thus, we concluded that the double SOI sensor is very effective at sufficiently enhancing the radiation hardness for application in experiments with harsh radiation environments, such as at Belle II or ILC.

  16. Shrew trap efficiency

    DEFF Research Database (Denmark)

    Gambalemoke, Mbalitini; Mukinzi, Itoka; Amundala, Drazo

    2008-01-01

    We investigated the efficiency of four trap types (pitfall, Sherman LFA, Victor snap and Museum Special snap traps) to capture shrews. This experiment was conducted in five inter-riverine forest blocks in the region of Kisangani. The total trapping effort was 6,300, 9,240, 5,280 and 5,460 trap-ni...

  17. External Force Damage Simulation of Submarine High-voltage Cable Based on Distributed Fiber Optic Sensor Technology%基于分布式光纤传感技术的高压海底电缆外力损坏仿真

    Institute of Scientific and Technical Information of China (English)

    陆莹; 黄辉

    2012-01-01

    高压海底电缆的安全稳定运行对于海上能源的开发具有重要的作用,海缆电缆的损坏主要由外力引起,针对分布式光纤传感器在线监测高压海底电缆运行状况的方法,利用有限元软件ANSYS建立XLPE高压海底电缆模型,仿真分析海底电缆受到外力损坏时,内部物理量的变化,为分布式光纤传感器在线监测高压海底电缆运行状态提供参考。%Safety and stable operation of submarine high-voltage cable has played an important role in the development of Marine energy. However, submarine high-voltage cable was mainly damaged by external forces. According to the method for operation state of submarine high-voltage cable using on-line monitoring technology based on distributed fiber optic sensor, the model of the XLPE submarine high-voltage cable was gained by using finite element software ANSYS. Then, based on the model, the change of internal physical quantities were researched ,when submarine high-voltage cable was damaged by external force, with the function to provide the practical reference for running state of submarine high-voltage cable monitoring on-line based on distributed fiber optic sensor.

  18. Measurement of the Length of an Optical Trap

    Science.gov (United States)

    Wrbanek, Susan Y.

    2010-01-01

    NASA Glenn has been involved in developing optical trapping and optical micromanipulation techniques in order to develop a tool that can be used to probe, characterize, and assemble nano and microscale materials to create microscale sensors for harsh flight environments. In order to be able to assemble a sensor or probe candidate sensor material, it is useful to know how far an optical trap can reach; that is, the distance beyond/below the stable trapping point through which an object will be drawn into the optical trap. Typically, to measure the distance over which an optical trap would influence matter in a horizontal (perpendicular to beam propagation) direction, it was common to hold an object in one optical trap, place a second optical trap a known distance away, turn off the first optical trap, and note if the object was moved into the second trap when it was turned on. The disadvantage of this technique is that it only gives information of trap influence distance in horizontal (x y) directions. No information about the distance of the influence of the trap is gained in the direction of propagation of the beam (the z direction). A method was developed to use a time-of-flight technique to determine the length along the propagation direction of an optical trap beam over which an object may be drawn into the optical trap. Test objects (polystyrene microspheres) were held in an optical trap in a water-filled sample chamber and raised to a pre-determined position near the top of the sample chamber. Next, the test objects were released by blocking the optical trap beam. The test objects were allowed to fall through the water for predetermined periods of time, at the end of which the trapping beam was unblocked. It was noted whether or not the test object returned to the optical trap or continued to fall. This determination of the length of an optical trap's influence by this manner assumes that the test object falls through the water in the sample chamber at

  19. Giant magnetoimpedance intrinsic impedance and voltage sensitivity of rapidly solidified Co{sub 66}Fe{sub 2}Cr{sub 4}Si{sub 13}B{sub 15} amorphous wire for highly sensitive sensors applications

    Energy Technology Data Exchange (ETDEWEB)

    Das, Tarun K.; Mandal, Sushil K. [CSIR - National Metallurgical Laboratory, NDE and Magnetic Materials Group, MST Division, Jamshedpur (India); Banerji, Pallab [Indian Institute of Technology, Kharagpur, Materials Science Centre, Kharagpur (India)

    2016-11-15

    We report a systematic study of the influence of wire length, L, dependence of giant magneto-impedance (GMI) sensitivity of Co{sub 66}Fe{sub 2}Cr{sub 4}Si{sub 13}B{sub 15} soft magnetic amorphous wire of diameter ∝ 100 μm developed by in-water quenching technique. The magnetization behaviour (hysteresis loops) of the wire with different length (L = 1, 2, 3, 5, 8 and 10 cm) has been evaluated by fuxmetric induction method. It was observed that the behaviour of the hysteresis loops change drastically with the wire length, being attributed to the existence of a critical length, L{sub C}, found to be around 3 cm. GMI measurements have been taken using automated GMI measurement system and the GMI sensitivities in terms of intrinsic impedance sensitivity (S{sub Ω/Am}{sup -1}) and voltage sensitivity (S{sub V/Am}{sup -1}) of the wire have been evaluated under optimal bias field and excitation current. It was found that the maximum (S{sub Ω/Am}{sup -1}){sub max} ∼ 0.63 Ω/kAm{sup -1}/cm and (S{sub V/Am}{sup -1}){sub max} ∼ 3.10 V/kAm{sup -1}/cm were achieved at a critical length L{sub C} ∝ 3 cm of the wire for an AC current of 5 mA and a frequency of 5 MHz. These findings provide crucial insights for optimization of the geometrical dimensions of magnetic sensing elements and important practical guidance for designing high sensitive GMI sensors. The relevant combinations of magnetic material parameters and operating conditions that optimize the sensitivity are highlighted. (orig.)

  20. Hot-Electron Tunneling sensors for high-resolution x-ray and gamma-ray spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Mears, C.A.; Labov, S.E.; Frank, M.; Netel, H.

    1997-02-07

    Over the past 2 years, we have been studying the use of Hot Electron Tunneling sensors for use in high-energy-resolution x-ray and gamma-ray spectrometers. These sensors promise several advantages over existing cryogenic sensors, including simultaneous high count rate and high resolution capability, and relative ease of use. Using simple shadow mask lithography, we verified the basic principles of operation of these devices and discovered new physics in their thermal behavior as a function applied voltage bias. We also began to develop ways to use this new sensor in practical x-ray and gamma-ray detectors based on superconducting absorbers. This requires the use of quasiparticle trapping to concentrate the signal in the sensing elements.

  1. Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons

    Energy Technology Data Exchange (ETDEWEB)

    Abderrahmane, A.; Tashiro, T.; Takahashi, H. [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan); Ko, P. J., E-mail: ko@eiiris.tut.ac.jp [Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan); Okada, H.; Sandhu, A. [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan); Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan); Sato, S.; Ohshima, T. [Quantum Beam Science Directorate, Japan Atomic Energy Agency (JAEA), 1233 Watanuki-cho, Takasaki, Gunma 370-1292 (Japan)

    2014-01-13

    The effect of annealing on the magnetoelectrical properties of proton-irradiated micro-Hall sensors at an energy of 380 keV and very high proton fluences was studied. Recovery of the electron mobility and a decrease in the sheet resistance of the annealed micro-Hall sensors, as well as an enhancement in their magnetic sensitivity were reported. Trap removal and an improvement in the crystal quality by removing defects were confirmed through current–voltage measurements and Raman spectroscopy, respectively.

  2. Methods and apparatuses for low-noise magnetic sensors

    KAUST Repository

    Kosel, Jurgen

    2015-10-20

    Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a first voltage lead coupled to the semiconductor layer. In some embodiments, the first voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the conductive layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

  3. Voltage Sensors in Hypokalemic Periodic Paralysis

    Directory of Open Access Journals (Sweden)

    J Gordon Millichap

    2009-06-01

    Full Text Available Researchers at the National Hospital, Queen Square, London, UK, conducted automated DNA sequencing of the S4 regions of CACNA1S and SCN4A in 83 patients with hypokalemic periodic paralysis (HypoPP.

  4. Solution structure and alanine scan of a spider toxin that affects the activation of mammalian voltage-gated sodium channels.

    Science.gov (United States)

    Corzo, Gerardo; Sabo, Jennifer K; Bosmans, Frank; Billen, Bert; Villegas, Elba; Tytgat, Jan; Norton, Raymond S

    2007-02-16

    Magi 5, from the hexathelid spider Macrothele gigas, is a 29-residue polypeptide containing three disulfide bridges. It binds specifically to receptor site 4 on mammalian voltage-gated sodium channels and competes with scorpion beta-toxins, such as Css IV from Centruroides suffusus suffusus. As a consequence, Magi 5 shifts the activation voltage of the mammalian rNav1.2a channel to more hyperpolarized voltages, whereas the insect channel, DmNav1, is not affected. To gain insight into toxin-channel interactions, Magi 5 and 23 analogues were synthesized. The three-dimensional structure of Magi 5 in aqueous solution was determined, and its voltage-gated sodium channel-binding surfaces were mapped onto this structure using data from electrophysiological measurements on a series of Ala-substituted analogues. The structure clearly resembles the inhibitor cystine knot structural motif, although the triple-stranded beta-sheet typically found in that motif is partially distorted in Magi 5. The interactive surface of Magi 5 toward voltage-gated sodium channels resembles in some respects the Janus-faced atracotoxins, with functionally important charged residues on one face of the toxin and hydrophobic residues on the other. Magi 5 also resembles the scorpion beta-toxin Css IV, which has distinct nonpolar and charged surfaces that are critical for channel binding and has a key Glu involved in voltage sensor trapping. These two distinct classes of toxin, with different amino acid sequences and different structures, may utilize similar groups of residues on their surface to achieve the common end of modifying voltage-gated sodium channel function.

  5. Nano devices and sensors

    CERN Document Server

    Liaw, Shien-Kuei; Chung, Yung-Hui

    2016-01-01

    This volume on semiconductor devices focuses on such topics as nano-imprinting, lithography, nanowire charge-trapping, thermo-stability in nanowires, nano-electrodes, and voltage and materials used for fabricating and improving electrical characteristics of nano-materials.

  6. Voltage-dependent motion of the catalytic region of voltage-sensing phosphatase monitored by a fluorescent amino acid.

    Science.gov (United States)

    Sakata, Souhei; Jinno, Yuka; Kawanabe, Akira; Okamura, Yasushi

    2016-07-05

    The cytoplasmic region of voltage-sensing phosphatase (VSP) derives the voltage dependence of its catalytic activity from coupling to a voltage sensor homologous to that of voltage-gated ion channels. To assess the conformational changes in the cytoplasmic region upon activation of the voltage sensor, we genetically incorporated a fluorescent unnatural amino acid, 3-(6-acetylnaphthalen-2-ylamino)-2-aminopropanoic acid (Anap), into the catalytic region of Ciona intestinalis VSP (Ci-VSP). Measurements of Anap fluorescence under voltage clamp in Xenopus oocytes revealed that the catalytic region assumes distinct conformations dependent on the degree of voltage-sensor activation. FRET analysis showed that the catalytic region remains situated beneath the plasma membrane, irrespective of the voltage level. Moreover, Anap fluorescence from a membrane-facing loop in the C2 domain showed a pattern reflecting substrate turnover. These results indicate that the voltage sensor regulates Ci-VSP catalytic activity by causing conformational changes in the entire catalytic region, without changing their distance from the plasma membrane.

  7. Derivation of Incident Angle and Sweeping Voltage Design on Advanced Ionospheric Probe onboard FORMOSAT-5

    Science.gov (United States)

    Lin, Z. W.; Chao, C. K.; Chang, Y. S.

    2014-12-01

    Advanced Ionospheric Probe (AIP) developed by the National Central University (NCU), Taiwan, has been selected to install on FORMOSAT-5 satellite. It is an all-in-one plasma sensor with the sampling rate up to 8,192 Hz to measure ionospheric plasma concentrations, velocities, and temperatures over a wide range of spatial scales. The design of AIP sensor allows it to sequentially perform as a Retarding Potential Analyzer (RPA), an Ion Drift Meter (IDM), an Ion Trap (IT), or a Planer Langmuir Probe (PLP). Unlike the inherited payload IPEI onboard FORMOSAT-1/ROCSAT-1, the entrance opening of IDM of AIP is circular instead of square shape, causes the difference in the geometry calculation of the projection area. New method is present to obtain the incident angle from the incoming plasma beam. Meanwhile, a set of sweeping voltage pattern is defined to get a better result of plasma parameters from RPA function. Upon the requirement of the mission, several sweeping voltage patterns are designed to fit the specified species of plasma to increase the accuracy in the derivation of ram speed and temperature. A simulation is present to show the fitting result in different assumptions and conditions for each sweeping pattern.

  8. Photo-excited charge collection spectroscopy probing the traps in field-effect transistors

    CERN Document Server

    Im, Seongil; Kim, Jae Hoon

    2013-01-01

    Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics. The operational stabilities of such TFTs are thus important, strongly depending on the nature and density of charge traps present at the channel/dielectric interface or in the thin-film channel itself. This book contains how to characterize these traps, starting from the device physics of field-effect transistor (FET). Unlike conventional analysis techniques which are away from well-resolving spectral results, newly-introduced photo-excited charge-collection spectroscopy (PECCS) utilizes the photo-induced threshold voltage response from any type of working transistor devices with organic-, inorganic-, and even nano-channels, directly probing on the traps. So, our technique PECCS has been discussed through more than ten refereed-journal papers in the fields of device electronics, applied physics, applied chemistry, nano-devices and materia...

  9. Transient Voltage Recorder

    Science.gov (United States)

    Medelius, Pedro J. (Inventor); Simpson, Howard J. (Inventor)

    2002-01-01

    A voltage transient recorder can detect lightning induced transient voltages. The recorder detects a lightning induced transient voltage and adjusts input amplifiers to accurately record transient voltage magnitudes. The recorder stores voltage data from numerous monitored channels, or devices. The data is time stamped and can be output in real time, or stored for later retrieval. The transient recorder, in one embodiment, includes an analog-to-digital converter and a voltage threshold detector. When an input voltage exceeds a pre-determined voltage threshold, the recorder stores the incoming voltage magnitude and time of arrival. The recorder also determines if its input amplifier circuits clip the incoming signal or if the incoming signal is too low. If the input data is clipped or too low, the recorder adjusts the gain of the amplifier circuits to accurately acquire subsequent components of the lightning induced transients.

  10. Charge trapping and de-trapping in Si-nanoparticles embedded in silicon oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Sanchez, A.; Barreto, J.; Dominguez, C. [IMB-CNM (CSIC), Campus UAB, 08193 Bellaterra, Barcelona (Spain); Aceves, M.; Yu, Z. [INAOE, Electronics Department, Puebla, Pue., 72000 (Mexico); Luna, J.A. [CCMC, UNAM, Optics Department, Ensenada, BC, 22800 (Mexico)

    2008-07-01

    Electrical properties of silicon nanoparticles (Si-np's) embedded in a silicon oxide matrix were studied using MOS-like structures. Si-np's were created after silicon rich oxide (SRO) films were thermally annealed at 1100 C. Capacitance-voltage (C-V) characteristics showed downward and upward peaks in the accumulation region. Current-voltage (I-V) measurements exhibited current valleys and downward and upward peaks. Current versus time (I-t) measurements were also done at a negative constant gate voltage. A switching behaviour between two current states (ON and OFF) was observed. These effects have been related to the charge trapping and de-trapping of the Si-np's embedded in the SRO films. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Direct frequency comb laser cooling and trapping

    CERN Document Server

    Jayich, A M; Campbell, W C

    2016-01-01

    Continuous wave (CW) lasers are the enabling technology for producing ultracold atoms and molecules through laser cooling and trapping. The resulting pristine samples of slow moving particles are the de facto starting point for both fundamental and applied science when a highly-controlled quantum system is required. Laser cooled atoms have recently led to major advances in quantum information, the search to understand dark energy, quantum chemistry, and quantum sensors. However, CW laser technology currently limits laser cooling and trapping to special types of elements that do not include highly abundant and chemically relevant atoms such as hydrogen, carbon, oxygen, and nitrogen. Here, we demonstrate that Doppler cooling and trapping by optical frequency combs may provide a route to trapped, ultracold atoms whose spectra are not amenable to CW lasers. We laser cool a gas of atoms by driving a two-photon transition with an optical frequency comb, an efficient process to which every comb tooth coherently cont...

  12. Poly-anion production in Penning and RFQ ion traps

    Energy Technology Data Exchange (ETDEWEB)

    Bandelow, Steffi; Martinez, Franklin; Marx, Gerrit; Schweikhard, Lutz [Institute for Physics, Ernst-Moritz-Arndt University, 17487 Greifswald (Germany)

    2014-07-01

    The poly-anion production is being investigated in Penning and linear radio-frequency quadrupole (RFQ) traps at the ClusterTrap setup. The range of anionic charge states produced with the electron-bath technique in a Penning trap is restricted by the upper mass limit of this trap. By installation of a cylindrical Penning trap with a 12-Tesla superconducting magnet, the mass and thus cluster-size range is enhanced by a factor of 20 compared to the previously used hyperbolic 5-Tesla Penning trap. For first experimental tests with the 12-Tesla cylindrical Penning trap, gold cluster mono-anions Au{sup n-1}, n=330-350, have been exposed to an electron bath. As a result, higher negative charge states up to hexa-anionic clusters have been observed for the first time. In a parallel effort, di- and tri-anionic gold clusters have been produced in an RFQ-trap. To this end, an electron beam is guided through the RFQ-trap, which is operated by 2- or 3-state digital driving voltages. In addition, both polyanion-production techniques have been combined by pre-charging clusters in the RFQ-trap, transferring the resulting dianions into the Penning trap and applying the electron-bath technique to produce higher charge states.

  13. Integration of fluorescence collection optics with a microfabricated surface electrode ion trap

    CERN Document Server

    Brady, Gregory R; Moehring, David L; Stick, Daniel; Highstrete, Clark; Fortier, Kevin M; Blain, Matthew G; Haltli, Raymond A; Cruz-Cabrera, Alvaro A; Briggs, Ronald D; Wendt, Joel R; Carter, Tony R; Samora, Sally; Kemme, Shanalyn A

    2010-01-01

    We have successfully demonstrated an integrated optical system for collecting the fluorescence from a trapped ion. The system, consisting of an array of transmissive, dielectric micro-optics and an optical fiber array, has been intimately incorporated into the ion trapping chip without negatively impacting trapping performance. Considerations such as our choice of epoxies, vacuum feedthrough, and optical component materials did not degrade the vacuum environment, and we have demonstrated light detection as well as ion trapping and shuttling behavior comparable to trapping chips without integrated optics, with no modification to the control voltages of the trapping chip.

  14. Small Mammal Trapping 2003

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — Small mammal traps were placed in the Baring division and in the Edmunds division of Moosehom National Wildlife Refuge. There were a total of 98 traps set for up to...

  15. St. Croix trap study

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The data set contains detailed information about the catch from 600 trap stations around St. Croix. Data fields include species caught, size data, trap location...

  16. Linearity Limits of Biased 1337 Trap Detectors

    CERN Document Server

    Balling, Petr

    2015-01-01

    The upper power limit of linear response of light trap detectors was recently measured [2,3]. We have completed this measurement with test of traps with bias voltage at several visible wavelengths using silicon photodiodes Hamamatsu S1337 1010 and made a brief test of S5227 1010. Bias extends the linearity limit by factor of more than 10 for very narrow beams and more than 30 for wide beams [5]. No irreversible changes were detected even for the highest irradiance of 33 W/cm2 at 406nm. Here we present measurement of minimal bias voltage necessary for 99%, 99.8% and 99.95% linearity for several beam sizes.

  17. Global Liquidity Trap

    OpenAIRE

    Fujiwara, Ippei; NAKAJIMA Tomoyuki; Sudo, Nao; Teranishi, Yuki

    2011-01-01

    In this paper we consider a two-country New Open Economy Macroeconomics model, and analyze the optimal monetary policy when countries cooperate in the face of a "global liquidity trap" -- i.e., a situation where the two countries are simultaneously caught in liquidity traps. The notable features of the optimal policy in the face of a global liquidity trap are history dependence and international dependence. The optimality of history dependent policy is confirmed as in local liquidity trap. A ...

  18. Electron attachment to anionic clusters in ion traps

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, Franklin, E-mail: franklin.martinez@uni-rostock.de [University of Rostock, Institute of Physics (Germany); Bandelow, Steffi; Marx, Gerrit; Schweikhard, Lutz; Vass, Albert [Ernst-Moritz-Arndt University, Institute of Physics (Germany)

    2015-11-15

    Ion traps are versatile tools for the investigation of gas-phase cluster ions, allowing, e.g., cluster-size selection and extended reaction times. Taking advantage of their particular storage capability of simultaneous trapping of electrons and clusters, Penning traps have been applied for the production of clusters with high negative charge states. Recently, linear radio-frequency quadrupole traps have been demonstrated to be another candidate to produce polyanionic clusters. Operation with rectangular, rather than harmonic, radio-frequency voltages provides field-free time slots for unhindered electron passage through the trap. Several aspects of electron-attachment techniques by means of Penning and radio-frequency traps are addressed and recent experimental results are presented.

  19. Variable Rail Voltage Control of a Brushless DC (BLDC) Motor

    Science.gov (United States)

    2013-01-01

    Variable Rail Voltage Control of a Brushless DC (BLDC) Motor by Yuan Chen, Joseph Conroy, and William Nothwang ARL-TR-6308 January 2013...TR-6308 January 2013 Variable Rail Voltage Control of a Brushless DC (BLDC) Motor Yuan Chen, Joseph Conroy, and William Nothwang Sensors...DATES COVERED (From - To) 4. TITLE AND SUBTITLE Variable Rail Voltage Control of a Brushless DC (BLDC) Motor 5a. CONTRACT NUMBER 5b. GRANT

  20. Ion trap simulation tools.

    Energy Technology Data Exchange (ETDEWEB)

    Hamlet, Benjamin Roger

    2009-02-01

    Ion traps present a potential architecture for future quantum computers. These computers are of interest due to their increased power over classical computers stemming from the superposition of states and the resulting capability to simultaneously perform many computations. This paper describes a software application used to prepare and visualize simulations of trapping and maneuvering ions in ion traps.

  1. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  2. Mixed voltage VLSI design

    Science.gov (United States)

    Panwar, Ramesh; Rennels, David; Alkalaj, Leon

    1993-01-01

    A technique for minimizing the power dissipated in a Very Large Scale Integration (VLSI) chip by lowering the operating voltage without any significant penalty in the chip throughput even though low voltage operation results in slower circuits. Since the overall throughput of a VLSI chip depends on the speed of the critical path(s) in the chip, it may be possible to sustain the throughput rates attained at higher voltages by operating the circuits in the critical path(s) with a high voltage while operating the other circuits with a lower voltage to minimize the power dissipation. The interface between the gates which operate at different voltages is crucial for low power dissipation since the interface may possibly have high static current dissipation thus negating the gains of the low voltage operation. The design of a voltage level translator which does the interface between the low voltage and high voltage circuits without any significant static dissipation is presented. Then, the results of the mixed voltage design using a greedy algorithm on three chips for various operating voltages are presented.

  3. Superconducting microfabricated ion traps

    CERN Document Server

    Wang, Shannon X; Labaziewicz, Jaroslaw; Dauler, Eric; Berggren, Karl; Chuang, Isaac L

    2010-01-01

    We fabricate superconducting ion traps with niobium and niobium nitride and trap single 88Sr ions at cryogenic temperatures. The superconducting transition is verified and characterized by measuring the resistance and critical current using a 4-wire measurement on the trap structure, and observing change in the rf reflection. The lowest observed heating rate is 2.1(3) quanta/sec at 800 kHz at 6 K and shows no significant change across the superconducting transition, suggesting that anomalous heating is primarily caused by noise sources on the surface. This demonstration of superconducting ion traps opens up possibilities for integrating trapped ions and molecular ions with superconducting devices.

  4. The trapped human experiment.

    Science.gov (United States)

    Huo, R; Agapiou, A; Bocos-Bintintan, V; Brown, L J; Burns, C; Creaser, C S; Devenport, N A; Gao-Lau, B; Guallar-Hoyas, C; Hildebrand, L; Malkar, A; Martin, H J; Moll, V H; Patel, P; Ratiu, A; Reynolds, J C; Sielemann, S; Slodzynski, R; Statheropoulos, M; Turner, M A; Vautz, W; Wright, V E; Thomas, C L P

    2011-12-01

    This experiment observed the evolution of metabolite plumes from a human trapped in a simulation of a collapsed building. Ten participants took it in turns over five days to lie in a simulation of a collapsed building and eight of them completed the 6 h protocol while their breath, sweat and skin metabolites were passed through a simulation of a collapsed glass-clad reinforced-concrete building. Safety, welfare and environmental parameters were monitored continuously, and active adsorbent sampling for thermal desorption GC-MS, on-line and embedded CO, CO(2) and O(2) monitoring, aspirating ion mobility spectrometry with integrated semiconductor gas sensors, direct injection GC-ion mobility spectrometry, active sampling thermal desorption GC-differential mobility spectrometry and a prototype remote early detection system for survivor location were used to monitor the evolution of the metabolite plumes that were generated. Oxygen levels within the void simulator were allowed to fall no lower than 19.1% (v). Concurrent levels of carbon dioxide built up to an average level of 1.6% (v) in the breathing zone of the participants. Temperature, humidity, carbon dioxide levels and the physiological measurements were consistent with a reproducible methodology that enabled the metabolite plumes to be sampled and characterized from the different parts of the experiment. Welfare and safety data were satisfactory with pulse rates, blood pressures and oxygenation, all within levels consistent with healthy adults. Up to 12 in-test welfare assessments per participant and a six-week follow-up Stanford Acute Stress Response Questionnaire indicated that the researchers and participants did not experience any adverse effects from their involvement in the study. Preliminary observations confirmed that CO(2), NH(3) and acetone were effective markers for trapped humans, although interactions with water absorbed in building debris needed further study. An unexpected observation from the NH(3

  5. A study on threshold voltage stability of low operating voltage organic thin-film transistors

    Science.gov (United States)

    Padma, N.; Sen, Shaswati; Sawant, Shilpa N.; Tokas, R.

    2013-08-01

    A low operating voltage (<2 V) organic field-effect transistor (OFET) using phenylhexyltrichlorosilane (PTS) self-assembled monolayer (SAM) dielectric and copper phthalocyanine (CuPc) as semiconductor with improved mobility (0.035 cm2 V-1 s-1) and threshold voltage stability was demonstrated. This device showed better performance when compared to an OFET with octyltrichlorosilane (OTS-8) SAM dielectric. The improved mobility was attributed to the 2D growth mode of CuPc on PTS SAM because of surface energy matching between the two, whereas CuPc film on OTS-8 showed a 3D growth mode with larger grain boundary density. The higher threshold voltage stability of OFETs on PTS SAM was attributed to the efficient coverage and screening of trap centres at dielectric/semiconductor interface due to stronger intermolecular linking and formation of closely packed surface by the bulky phenyl end groups. Decrease in grain boundaries offered by 2D growth of CuPc for electron and hole trapping was also found to be another reason for improved threshold voltage stability. The results indicated that the nature of the end group of SAM dielectric, surface chemistry of dielectric and initial growth mode of semiconductors are all responsible for improvement in threshold voltage stability and enhanced performance of OFET.

  6. Optimising camera traps for monitoring small mammals.

    Directory of Open Access Journals (Sweden)

    Alistair S Glen

    Full Text Available Practical techniques are required to monitor invasive animals, which are often cryptic and occur at low density. Camera traps have potential for this purpose, but may have problems detecting and identifying small species. A further challenge is how to standardise the size of each camera's field of view so capture rates are comparable between different places and times. We investigated the optimal specifications for a low-cost camera trap for small mammals. The factors tested were 1 trigger speed, 2 passive infrared vs. microwave sensor, 3 white vs. infrared flash, and 4 still photographs vs. video. We also tested a new approach to standardise each camera's field of view. We compared the success rates of four camera trap designs in detecting and taking recognisable photographs of captive stoats (Mustelaerminea, feral cats (Felis catus and hedgehogs (Erinaceuseuropaeus. Trigger speeds of 0.2-2.1 s captured photographs of all three target species unless the animal was running at high speed. The camera with a microwave sensor was prone to false triggers, and often failed to trigger when an animal moved in front of it. A white flash produced photographs that were more readily identified to species than those obtained under infrared light. However, a white flash may be more likely to frighten target animals, potentially affecting detection probabilities. Video footage achieved similar success rates to still cameras but required more processing time and computer memory. Placing two camera traps side by side achieved a higher success rate than using a single camera. Camera traps show considerable promise for monitoring invasive mammal control operations. Further research should address how best to standardise the size of each camera's field of view, maximise the probability that an animal encountering a camera trap will be detected, and eliminate visible or audible cues emitted by camera traps.

  7. Optimising camera traps for monitoring small mammals.

    Science.gov (United States)

    Glen, Alistair S; Cockburn, Stuart; Nichols, Margaret; Ekanayake, Jagath; Warburton, Bruce

    2013-01-01

    Practical techniques are required to monitor invasive animals, which are often cryptic and occur at low density. Camera traps have potential for this purpose, but may have problems detecting and identifying small species. A further challenge is how to standardise the size of each camera's field of view so capture rates are comparable between different places and times. We investigated the optimal specifications for a low-cost camera trap for small mammals. The factors tested were 1) trigger speed, 2) passive infrared vs. microwave sensor, 3) white vs. infrared flash, and 4) still photographs vs. video. We also tested a new approach to standardise each camera's field of view. We compared the success rates of four camera trap designs in detecting and taking recognisable photographs of captive stoats (Mustelaerminea), feral cats (Felis catus) and hedgehogs (Erinaceuseuropaeus). Trigger speeds of 0.2-2.1 s captured photographs of all three target species unless the animal was running at high speed. The camera with a microwave sensor was prone to false triggers, and often failed to trigger when an animal moved in front of it. A white flash produced photographs that were more readily identified to species than those obtained under infrared light. However, a white flash may be more likely to frighten target animals, potentially affecting detection probabilities. Video footage achieved similar success rates to still cameras but required more processing time and computer memory. Placing two camera traps side by side achieved a higher success rate than using a single camera. Camera traps show considerable promise for monitoring invasive mammal control operations. Further research should address how best to standardise the size of each camera's field of view, maximise the probability that an animal encountering a camera trap will be detected, and eliminate visible or audible cues emitted by camera traps.

  8. Development of TGS2611 methane sensor and SHT11 humidity and temperature sensor for measuring greenhouse gas on peatlands in south kalimantan, indonesia

    Science.gov (United States)

    Sugriwan, I.; Soesanto, O.

    2017-05-01

    The research was focused on development of data acquisition system to monitor the content of methane, relative humidity and temperature on peatlands in South Kalimantan, Indonesia. Methane is one of greenhouse gases that emitted from peatlands; while humidity and temperature are important parameters of microclimate on peatlands. The content of methane, humidity and temperature are three parameters were monitored digitally, real time, continuously and automatically record by data acquisition systems that interfaced to the personal computer. The hardware of data acquisition system consists of power supply unit, TGS2611 methane gas sensor, SHT11 humidity and temperature sensors, voltage follower, ATMega8535 microcontroller, 16 × 2 LCD character and personal computer. ATMega8535 module is a device to manage all part in measuring instrument. The software which is responsible to take sensor data, calculate characteristic equation and send data to 16 × 2 LCD character are Basic Compiler. To interface between measuring instrument and personal computer is maintained by Delphi 7. The result of data acquisition showed on 16 × 2 LCD characters, PC monitor and database with developed by XAMPP. Methane, humidity, and temperature which release from peatlands are trapped by Closed-Chamber Measurement with dimension 60 × 50 × 40 cm3. TGS2611 methane gas sensor and SHT11 humidity and temperature sensor are calibrated to determine transfer function used to data communication between sensors and microcontroller and integrated into ATMega8535 Microcontroller. Calculation of RS and RL of TGS2611 methane gas sensor refer to data sheet and obtained respectively 1360 ohm and 905 ohm. The characteristic equation of TGS2611 satisfies equation VRL = 0.561 ln n - 2.2641 volt, with n is a various concentrations and VRL in volt. The microcontroller maintained the voltage signal than interfaced it to liquid crystal displays and personal computer (laptop) to display result of the measurement

  9. Trap style influences wild pig behavior and trapping success

    Science.gov (United States)

    Williams, B.L.; Holtfreter, R.W.; Ditchkoff, S.S.; Grand, J.B.

    2011-01-01

    Despite the efforts of many natural resource professionals, wild pig (Sus scrofa) populations are expanding in many areas of the world. Although many creative techniques for controlling pig populations are being explored, trapping has been and still is themost commonly usedmethod of population control formany public and private land managers. We conducted an observational study to examine the efficiency of 2 frequently used trap styles: a small, portable box-style trap and a larger, semi-permanent, corral-style trap.We used game cameras to examine patterns of trap entry by wild pigs around each style of trap, and we conducted a trapping session to compare trapping success between trap styles. Adult female and juvenile wild pigs entered both styles of trap more readily than did adult males, and adult males seemed particularly averse to entering box traps. Less than 10% of adult male visits to box traps resulted in entries, easily the least percentage of any class at any style of trap. Adult females entered corral traps approximately 2.2 times more often per visit than box traps and re-entered corral traps >2 times more frequently. Juveniles entered and reentered both box and corral traps at similar rates. Overall (all-class) entry-per-visit rates at corral traps (0.71) were nearly double that of box traps (0.37). Subsequent trapping data supported these preliminary entry data; the capture rate for corral traps was >4 times that of box traps. Our data suggest that corral traps are temporally and economically superior to box traps with respect to efficiency; that is, corral traps effectively trap more pigs per trap night at a lower cost per pig than do box traps. ?? 2011 The Wildlife Society.

  10. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  11. Multimeric nature of voltage-gated proton channels

    OpenAIRE

    Koch, Hans P.; Kurokawa, Tatsuki; Okochi, Yoshifumi; Sasaki, Mari; Okamura, Yasushi; Larsson, H. Peter

    2008-01-01

    Voltage-gated potassium channels are comprised of four subunits, and each subunit has a pore domain and a voltage-sensing domain (VSD). The four pore domains assemble to form one single central pore, and the four individual VSDs control the gate of the pore. Recently, a family of voltage-gated proton channels, such as HV or voltage sensor only protein (VSOP), was discovered that contain a single VSD but no pore domain. It has been assumed that VSOP channels are monomeric and contain a single ...

  12. Neutral atom traps.

    Energy Technology Data Exchange (ETDEWEB)

    Pack, Michael Vern

    2008-12-01

    This report describes progress in designing a neutral atom trap capable of trapping sub millikelvin atom in a magnetic trap and shuttling the atoms across the atom chip from a collection area to an optical cavity. The numerical simulation and atom chip design are discussed. Also, discussed are preliminary calculations of quantum noise sources in Kerr nonlinear optics measurements based on electromagnetically induced transparency. These types of measurements may be important for quantum nondemolition measurements at the few photon limit.

  13. Origin of traps and charge transport mechanism in hafnia

    Energy Technology Data Exchange (ETDEWEB)

    Islamov, D. R., E-mail: damir@isp.nsc.ru; Gritsenko, V. A., E-mail: grits@isp.nsc.ru [Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Cheng, C. H. [Department of Mechatronic Technology, National Taiwan Normal University, Taipei 106, Taiwan (China); Chin, A., E-mail: albert-achin@hotmail.com [National Chiao Tung University, Hsinchu 300, Taiwan (China)

    2014-12-01

    In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO{sub 2}. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics was achieved. The thermal trap energy of 1.25 eV in HfO{sub 2} was determined based on the charge transport experiments.

  14. Enhanced charge trapping in bipolar spacer oxides during low-dose-rate irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Fleetwood, D.M.; Reber, R.A. Jr.; Winokur, P.S. [Sandia National Labs., Albuquerque, NM (United States); Kosier, S.L.; Schrimpf, R.D. [Arizona Univ., Tucson, AZ (United States). Dept. of Electrical and Computer Engineering; Nowlin, R.N. [Air Force Phillips Laboratory, Albuquerque, NM (United States); Pease, R.L. [RLP Research, Inc., Albuquerque, NM (United States); DeLaus, M. [Analog Devices, Wilmington, MA (United States)

    1994-03-01

    Thermally-stimulated-current and capacitance-voltage measurements reveal enhanced hole trapping in bipolar spacer-oxide capacitors irradiated at 0 V at low dose rates. Possible mechanisms and implications for bipolar low-rate response are discussed.

  15. Effect of Grain Size on the Threshold Voltage for Double-Gate Polycrystaline Silicon MOSFET

    Directory of Open Access Journals (Sweden)

    Alka Panwar

    2011-01-01

    Full Text Available The effect of grain size (D on the threshold voltage (Vth for double gate polycrystalline silicon MOSFET is investigated theoretically in terms of grain boundary trap states (NT. It is found that the threshold voltage (Vth increases non-linearly with increasing silicon-oxide thickness (tox for all values of grain size (D. However the threshold voltage is seen to have smaller values for same tox for the larger grains. This may be attributed to the reduction in the number of trap states in the depletion regions on either side of a grain boundary. Finally the dependence of threshold voltage (Vth on various parameters such as the doping concentration, interface trap state density and field penetration from drain to source are explored out. The results of these findings are in good agreement with those available in the literature. For large grain poly silicon MOSFET the threshold voltage is seen to approach the single crystal value.

  16. Stray voltage mitigation

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

    2008-04-09

    This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

  17. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  18. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  19. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    OpenAIRE

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar; Cecati, Carlo

    2013-01-01

    Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbala...

  20. Towards trapped antihydrogen

    Science.gov (United States)

    Jørgensen, L. V.; Andresen, G.; Bertsche, W.; Boston, A.; Bowe, P. D.; Cesar, C. L.; Chapman, S.; Charlton, M.; Fajans, J.; Fujiwara, M. C.; Funakoshi, R.; Gill, D. R.; Hangst, J. S.; Hayano, R. S.; Hydomako, R.; Jenkins, M. J.; Kurchaninov, L.; Madsen, N.; Nolan, P.; Olchanski, K.; Olin, A.; Page, R. D.; Povilus, A.; Robicheaux, F.; Sarid, E.; Silveira, D. M.; Storey, J. W.; Thompson, R. I.; van der Werf, D. P.; Wurtele, J. S.; Yamazaki, Y.; Alpha Collaboration

    2008-02-01

    Substantial progress has been made in the last few years in the nascent field of antihydrogen physics. The next big step forward is expected to be the trapping of the formed antihydrogen atoms using a magnetic multipole trap. ALPHA is a new international project that started to take data in 2006 at CERN's Antiproton Decelerator facility. The primary goal of ALPHA is stable trapping of cold antihydrogen atoms to facilitate measurements of its properties. We discuss the status of the ALPHA project and the prospects for antihydrogen trapping.

  1. Towards trapped antihydrogen

    CERN Document Server

    Jorgensen, L V; Bertsche, W; Boston, A; Bowe, P D; Cesar, C L; Chapman, S; Charlton, M; Fajans, J; Fujiwara, M C; Funakoshi, R; Gill, D R; Hangst, J S; Hayano, R S; Hydomako, R; Jenkins, M J; Kurchaninov, L; Madsen, N; Nolan, P; Olchanski, K; Olin, A; Page, R D; Povilus, A; Robicheaux, F; Sarid, E; Silveira, D M; Storey, J W; Thompson, R I; van der Werf, D P; Wurtele, J S; Yamazaki, Y

    2008-01-01

    Substantial progress has been made in the last few years in the nascent field of antihydrogen physics. The next big step forward is expected to be the trapping of the formed antihydrogen atoms using a magnetic multipole trap. ALPHA is a new international project that started to take data in 2006 at CERN’s Antiproton Decelerator facility. The primary goal of ALPHA is stable trapping of cold antihydrogen atoms to facilitate measurements of its properties. We discuss the status of the ALPHA project and the prospects for antihydrogen trapping.

  2. Efficient Low Voltage Amplification Using Self Starting Voltage Regulator for Storage System

    Directory of Open Access Journals (Sweden)

    Haslinah Binti Mohd Nasir

    2014-10-01

    Full Text Available This paper presents a storage system design based on energy harvesting to achieve batteryless for Wireless Sensor Network (WSN application. The storage system is part of the Wireless Sensor Energy Harvesting to store and amplify the energy harvested from the surroundings. Finding a new sources of renewable energy has becomes a fashionable among researchers nowadays in particular harvesting the energy from the surrounding. However the challenge raised is to boost up the energy that known are very low. Thus the proposed method must be consumes very little power and suitable for ambient environmental sources such as vibration, wind and RF energy and be able to boost up the energy for storage system. The output of the harvested voltage is insufficient for most applications, therefore the system will boost up the input voltage level using DC to DC converter topology to higher dc voltage.The DC to DC converter shall be designed to suit the types of storage required. The output voltage of this DC converter should be sufficient to charge either capacitor or supercapacitor that will be use in this system as the energy storage system. The supercapacitor will provide power to energize any system such as in this case wireless sensor network[1]. In the case of wireless sensor network for example, the node would require the energy during transmitting and receiving data only whereas during standby mode or sleep mode, the amount of energy required would be very small[2]. Therefore the storage system will make use of this standby time or sleep mode of the sensor node to store as much energy as possible. The presented DC to DC converter in this paper has high efficiency upto 85.4% with input voltage between range 300mV to 600mV.

  3. A biodetection method using magnetic particles and micro traps

    KAUST Repository

    Li, Fuquan

    2012-03-09

    The general working principle of magnetoresistive sensors for biological applications is to specifically attach bioanalytesto magnetic particles and then detect the particles that are immobilized on the sensor surface. The immobilization of the particles on the sensor surface commonly uses biomolecular interactions, e.g., antigen-antibody. Thus, the sensor surface needs to be functionalized via biological treatments in order to capture certain bioanalytes. In the presented work, a new method is proposed, which does not rely on functionalization of the sensor surface. Current carrying microstructures in combination with mechanical micro traps are used to immobilize magnetic particles. Analyte detection is based on the difference in size between bare magnetic particles and particles with analyte attached, which causes a different number of particles to be captured in the micro traps.

  4. Number of traps and trap depth position on statistical distribution of random telegraph noise in scaled NAND flash memory

    Science.gov (United States)

    Tomita, Toshihiro; Miyaji, Kousuke

    2016-04-01

    The dependence of random telegraph noise (RTN) amplitude distribution on the number of traps and trap depth position is investigated using three-dimensional Monte Carlo device simulation including random dopant fluctuation (RDF) in a 30 nm NAND multi level flash memory. The ΔV th tail distribution becomes broad at fixed double traps, indicating that the number of traps greatly affects the worst RTN characteristics. It is also found that for both fixed single and fixed double traps, the ΔV th distribution in the lowest cell threshold voltage (V th) state shows the broadest distribution among all cell V th states. This is because the drain current flows at the channel surface in the lowest cell V th state, while at a high cell V th, it flows at the deeper position owing to the fringing coupling between the control gate (CG) and the channel. In this work, the ΔV th distribution with the number of traps following the Poisson distribution is also considered to cope with the variations in trap number. As a result, it is found that the number of traps is an important factor for understanding RTN characteristics. In addition, considering trap position in the tunnel oxide thickness direction is also an important factor.

  5. Search for trapped antihydrogen

    Science.gov (United States)

    Andresen, G. B.; Ashkezari, M. D.; Baquero-Ruiz, M.; Bertsche, W.; Bowe, P. D.; Bray, C. C.; Butler, E.; Cesar, C. L.; Chapman, S.; Charlton, M.; Fajans, J.; Friesen, T.; Fujiwara, M. C.; Gill, D. R.; Hangst, J. S.; Hardy, W. N.; Hayano, R. S.; Hayden, M. E.; Humphries, A. J.; Hydomako, R.; Jonsell, S.; Jørgensen, L. V.; Kurchaninov, L.; Lambo, R.; Madsen, N.; Menary, S.; Nolan, P.; Olchanski, K.; Olin, A.; Povilus, A.; Pusa, P.; Robicheaux, F.; Sarid, E.; Seif El Nasr, S.; Silveira, D. M.; So, C.; Storey, J. W.; Thompson, R. I.; van der Werf, D. P.; Wilding, D.; Wurtele, J. S.; Yamazaki, Y.; Alpha Collaboration

    2011-01-01

    We present the results of an experiment to search for trapped antihydrogen atoms with the ALPHA antihydrogen trap at the CERN Antiproton Decelerator. Sensitive diagnostics of the temperatures, sizes, and densities of the trapped antiproton and positron plasmas have been developed, which in turn permitted development of techniques to precisely and reproducibly control the initial experimental parameters. The use of a position-sensitive annihilation vertex detector, together with the capability of controllably quenching the superconducting magnetic minimum trap, enabled us to carry out a high-sensitivity and low-background search for trapped synthesised antihydrogen atoms. We aim to identify the annihilations of antihydrogen atoms held for at least 130 ms in the trap before being released over ∼30 ms. After a three-week experimental run in 2009 involving mixing of 10 7 antiprotons with 1.3×10 positrons to produce 6×10 antihydrogen atoms, we have identified six antiproton annihilation events that are consistent with the release of trapped antihydrogen. The cosmic ray background, estimated to contribute 0.14 counts, is incompatible with this observation at a significance of 5.6 sigma. Extensive simulations predict that an alternative source of annihilations, the escape of mirror-trapped antiprotons, is highly unlikely, though this possibility has not yet been ruled out experimentally.

  6. Voltage verification unit

    Science.gov (United States)

    Martin, Edward J.

    2008-01-15

    A voltage verification unit and method for determining the absence of potentially dangerous potentials within a power supply enclosure without Mode 2 work is disclosed. With this device and method, a qualified worker, following a relatively simple protocol that involves a function test (hot, cold, hot) of the voltage verification unit before Lock Out/Tag Out and, and once the Lock Out/Tag Out is completed, testing or "trying" by simply reading a display on the voltage verification unit can be accomplished without exposure of the operator to the interior of the voltage supply enclosure. According to a preferred embodiment, the voltage verification unit includes test leads to allow diagnostics with other meters, without the necessity of accessing potentially dangerous bus bars or the like.

  7. Electrocatalytic cermet sensor

    Science.gov (United States)

    Shoemaker, Erika L.; Vogt, Michael C.

    1998-01-01

    A sensor for O.sub.2 and CO.sub.2 gases. The gas sensor includes a plurality of layers driven by a cyclic voltage to generate a unique plot characteristic of the gas in contact with the sensor. The plurality of layers includes an alumina substrate, a reference electrode source of anions, a lower electrical reference electrode of Pt coupled to the reference source of anions, a solid electrolyte containing tungsten and coupled to the lower reference electrode, a buffer layer for preventing flow of Pt ions into the solid electrolyte and an upper catalytically active Pt electrode coupled to the buffer layer.

  8. Trapping radioactive ions

    CERN Document Server

    Kluge, Heinz-Jürgen

    2004-01-01

    Trapping devices for atomic and nuclear physics experiments with radioactive ions are becoming more and more important at accelerator facilities. While about ten years ago only one online Penning trap experiment existed, namely ISOLTRAP at ISOLDE/CERN, meanwhile almost every radioactive beam facility has installed or plans an ion trap setup. This article gives an overview on ion traps in the operation, construction or planing phase which will be used for fundamental studies with short-lived radioactive nuclides such as mass spectrometry, laser spectroscopy and nuclear decay spectroscopy. In addition, this article summarizes the use of gas cells and radiofrequency quadrupole (Paul) traps at different facilities as a versatile tool for ion beam manipulation like retardation, cooling, bunching, and cleaning.

  9. Static Trapping of Polar Molecules in a Traveling Wave Decelerator

    NARCIS (Netherlands)

    Quintero-Perez, Marina; Jansen, Paul; Wall, Thomas E.; van den Berg, Joost E.; Hoekstra, Steven; Bethlem, Hendrick L.

    2013-01-01

    We present experiments on decelerating and trapping ammonia molecules using a combination of a Stark decelerator and a traveling wave decelerator. In the traveling wave decelerator, a moving potential is created by a series of ring-shaped electrodes to which oscillating high voltages (HV) are applie

  10. Experimental apparatus to test air trap valves

    Science.gov (United States)

    Lemos De Lucca, Y. de F.; de Aquino, G. A.; Filho, J. G. D.

    2010-08-01

    It is known that the presence of trapped air within water distribution pipes can lead to irregular operation or even damage to the distribution systems and their components. The presence of trapped air may occur while the pipes are being filled with water, or while the pumping systems are in operation. The formation of large air pockets can produce the water hammer phenomenon, the instability and the loss of pressure in the water distribution networks. As a result, it can overload the pumps, increase the consumption of electricity, and damage the pumping system. In order to avoid its formation, all of the trapped air should be removed through "air trap valves". In Brazil, manufacturers frequently have unreliable sizing charts, which cause malfunctioning of the "air trap valves". The result of these malfunctions causes accidents of substantial damage. The construction of a test facility will provide a foundation of technical information that will be used to help make decisions when designing a system of pipelines where "air trap valves" are used. To achieve this, all of the valve characteristics (geometric, mechanic, hydraulic and dynamic) should be determined. This paper aims to describe and analyze the experimental apparatus and test procedure to be used to test "air trap valves". The experimental apparatus and test facility will be located at the University of Campinas, Brazil at the College of Civil Engineering, Architecture, and Urbanism in the Hydraulics and Fluid Mechanics laboratory. The experimental apparatus will be comprised of various components (pumps, steel pipes, butterfly valves to control the discharge, flow meter and reservoirs) and instrumentation (pressure transducers, anemometer and proximity sensor). It should be emphasized that all theoretical and experimental procedures should be defined while taking into consideration flow parameters and fluid properties that influence the tests.

  11. Experimental apparatus to test air trap valves

    Energy Technology Data Exchange (ETDEWEB)

    Lemos De Lucca, Y de F [CTH-DAEE-USP/FAAP/UNICAMP (Brazil); Aquino, G A de [SABESP/UNICAMP (Brazil); Filho, J G D, E-mail: yvone.lucca@gmail.co [Water Resources Department, University of Campinas-UNICAMP, Av. Albert Einstein, 951, Cidade Universitaria-Barao Geraldo-Campinas, S.P., 13083-852 (Brazil)

    2010-08-15

    It is known that the presence of trapped air within water distribution pipes can lead to irregular operation or even damage to the distribution systems and their components. The presence of trapped air may occur while the pipes are being filled with water, or while the pumping systems are in operation. The formation of large air pockets can produce the water hammer phenomenon, the instability and the loss of pressure in the water distribution networks. As a result, it can overload the pumps, increase the consumption of electricity, and damage the pumping system. In order to avoid its formation, all of the trapped air should be removed through 'air trap valves'. In Brazil, manufacturers frequently have unreliable sizing charts, which cause malfunctioning of the 'air trap valves'. The result of these malfunctions causes accidents of substantial damage. The construction of a test facility will provide a foundation of technical information that will be used to help make decisions when designing a system of pipelines where 'air trap valves' are used. To achieve this, all of the valve characteristics (geometric, mechanic, hydraulic and dynamic) should be determined. This paper aims to describe and analyze the experimental apparatus and test procedure to be used to test 'air trap valves'. The experimental apparatus and test facility will be located at the University of Campinas, Brazil at the College of Civil Engineering, Architecture, and Urbanism in the Hydraulics and Fluid Mechanics laboratory. The experimental apparatus will be comprised of various components (pumps, steel pipes, butterfly valves to control the discharge, flow meter and reservoirs) and instrumentation (pressure transducers, anemometer and proximity sensor). It should be emphasized that all theoretical and experimental procedures should be defined while taking into consideration flow parameters and fluid properties that influence the tests.

  12. 1985-86 Trapping Proposal

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This Annual Trapping Plan for the 1985-1986 trapping season at Clarence Cannon NWR outlines rules and regulations for the trapping of beaver and muskrat on the...

  13. SOGI-based capacitor voltage feedback active damping in LCL-filtered grid converters

    DEFF Research Database (Denmark)

    Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

    2015-01-01

    The capacitor voltage feedback active damping control is an attractive way to suppress LCL-filter resonance especially for the systems where the capacitor voltage is used for grid synchronization, since no extra sensors are added. The derivative is the core of the capacitor voltage feedback active...... derivative is more suited for capacitor voltage feedback active damping control. Experimental results validate the effectiveness of the proposed method....

  14. Nematode-Trapping Fungi.

    Science.gov (United States)

    Jiang, Xiangzhi; Xiang, Meichun; Liu, Xingzhong

    2017-01-01

    Nematode-trapping fungi are a unique and intriguing group of carnivorous microorganisms that can trap and digest nematodes by means of specialized trapping structures. They can develop diverse trapping devices, such as adhesive hyphae, adhesive knobs, adhesive networks, constricting rings, and nonconstricting rings. Nematode-trapping fungi have been found in all regions of the world, from the tropics to Antarctica, from terrestrial to aquatic ecosystems. They play an important ecological role in regulating nematode dynamics in soil. Molecular phylogenetic studies have shown that the majority of nematode-trapping fungi belong to a monophyletic group in the order Orbiliales (Ascomycota). Nematode-trapping fungi serve as an excellent model system for understanding fungal evolution and interaction between fungi and nematodes. With the development of molecular techniques and genome sequencing, their evolutionary origins and divergence, and the mechanisms underlying fungus-nematode interactions have been well studied. In recent decades, an increasing concern about the environmental hazards of using chemical nematicides has led to the application of these biological control agents as a rapidly developing component of crop protection.

  15. Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

    Science.gov (United States)

    Degtiarenko, Pavel V.; Popov, Vladimir E.

    2011-03-22

    A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

  16. Color regeneration from reflective color sensor using an artificial intelligent technique.

    Science.gov (United States)

    Saracoglu, Ömer Galip; Altural, Hayriye

    2010-01-01

    A low-cost optical sensor based on reflective color sensing is presented. Artificial neural network models are used to improve the color regeneration from the sensor signals. Analog voltages of the sensor are successfully converted to RGB colors. The artificial intelligent models presented in this work enable color regeneration from analog outputs of the color sensor. Besides, inverse modeling supported by an intelligent technique enables the sensor probe for use of a colorimetric sensor that relates color changes to analog voltages.

  17. Inductive Position Sensor

    Science.gov (United States)

    Youngquist, Robert C. (Inventor); Simmons, Stephen M. (Inventor)

    2015-01-01

    An inductive position sensor uses three parallel inductors, each of which has an axial core that is an independent magnetic structure. A first support couples first and second inductors and separate them by a fixed distance. A second support coupled to a third inductor disposed between the first and second inductors. The first support and second support are configured for relative movement as distance changes from the third inductor to each of the first and second inductors. An oscillating current is supplied to the first and second inductors. A device measures a phase component of a source voltage generating the oscillating current and a phase component of voltage induced in the third inductor when the oscillating current is supplied to the first and second inductors such that the phase component of the voltage induced overlaps the phase component of the source voltage.

  18. High Voltage Distribution

    Science.gov (United States)

    Norbeck, Edwin; Miller, Michael; Onel, Yasar

    2010-11-01

    For detector arrays that require 5 to 10 kV at a few microamps each for hundreds of detectors, using hundreds of HV power supplies is unreasonable. Bundles of hundreds of HV cables take up space that should be filled with detectors. A typical HV module can supply 1 ma, enough current for hundreds of detectors. It is better to use a single HV module and distribute the current as needed. We show a circuit that, for each detector, measures the current, cuts off the voltage if the current exceeds a set maximum, and allows the HV to be turned on or off from a control computer. The entire array requires a single HV cable and 2 or 3 control lines. This design provides the same voltage to all of the detectors, the voltage set by the single HV module. Some additional circuitry would allow a computer controlled voltage drop between the HV and each individual detector.

  19. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  20. Microfabricated Waveguide Atom Traps.

    Energy Technology Data Exchange (ETDEWEB)

    Jau, Yuan-Yu

    2017-09-01

    A nano - scale , microfabricated waveguide structure can in - principle be used to trap atoms in well - defined locations and enable strong photon - atom interactions . A neutral - atom platf orm based on this microfabrication technology will be pre - aligned , which is especially important for quantum - control applications. At present, there is still no reported demonstration of evanescent - field atom trapping using a microfabricated waveguide structure. We described the capabilities established by our team for future development of the waveguide atom - trapping technology at SNL and report our studies to overcome the technical challenges of loading cold atoms into the waveguide atom traps, efficient and broadband optical coupling to a waveguide, and the waveguide material for high - power optical transmission. From the atomic - physics and the waveguide modeling, w e have shown that a square nano - waveguide can be utilized t o achieve better atomic spin squeezing than using a nanofiber for first time.

  1. Low-voltage gyrotrons

    Science.gov (United States)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-03-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5-10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%-2% in the submillimeter wavelength region).

  2. Monte Carlo modeling and optimization of buffer gas positron traps

    Science.gov (United States)

    Marjanović, Srđan; Petrović, Zoran Lj

    2017-02-01

    Buffer gas positron traps have been used for over two decades as the prime source of slow positrons enabling a wide range of experiments. While their performance has been well understood through empirical studies, no theoretical attempt has been made to quantitatively describe their operation. In this paper we apply standard models as developed for physics of low temperature collision dominated plasmas, or physics of swarms to model basic performance and principles of operation of gas filled positron traps. The Monte Carlo model is equipped with the best available set of cross sections that were mostly derived experimentally by using the same type of traps that are being studied. Our model represents in realistic geometry and fields the development of the positron ensemble from the initial beam provided by the solid neon moderator through voltage drops between the stages of the trap and through different pressures of the buffer gas. The first two stages employ excitation of N2 with acceleration of the order of 10 eV so that the trap operates under conditions when excitation of the nitrogen reduces the energy of the initial beam to trap the positrons without giving them a chance to become annihilated following positronium formation. The energy distribution function develops from the assumed distribution leaving the moderator, it is accelerated by the voltage drops and forms beams at several distinct energies. In final stages the low energy loss collisions (vibrational excitation of CF4 and rotational excitation of N2) control the approach of the distribution function to a Maxwellian at room temperature but multiple non-Maxwellian groups persist throughout most of the thermalization. Optimization of the efficiency of the trap may be achieved by changing the pressure and voltage drops and also by selecting to operate in a two stage mode. The model allows quantitative comparisons and test of optimization as well as development of other properties.

  3. Rain Drop Charge Sensor

    Science.gov (United States)

    S, Sreekanth T.

    begin{center} Large Large Rain Drop Charge Sensor Sreekanth T S*, Suby Symon*, G. Mohan Kumar (1) , S. Murali Das (2) *Atmospheric Sciences Division, Centre for Earth Science Studies, Thiruvananthapuram 695011 (1) D-330, Swathi Nagar, West Fort, Thiruvananthapuram 695023 (2) Kavyam, Manacaud, Thiruvananthapuram 695009 begin{center} ABSTRACT To study the inter-relations with precipitation electricity and precipitation microphysical parameters a rain drop charge sensor was designed and developed at CESS Electronics & Instrumentation Laboratory. Simultaneous measurement of electric charge and fall speed of rain drops could be done using this charge sensor. A cylindrical metal tube (sensor tube) of 30 cm length is placed inside another thick metal cover opened at top and bottom for electromagnetic shielding. Mouth of the sensor tube is exposed and bottom part is covered with metal net in the shielding cover. The instrument is designed in such a way that rain drops can pass only through unhindered inside the sensor tube. When electrically charged rain drops pass through the sensor tube, it is charged to the same magnitude of drop charge but with opposite polarity. The sensor tube is electrically connected the inverted input of a current to voltage converter operational amplifier using op-amp AD549. Since the sensor is electrically connected to the virtual ground of the op-amp, the charge flows to the ground and the generated current is converted to amplified voltage. This output voltage is recorded using a high frequency (1kHz) voltage recorder. From the recorded pulse, charge magnitude, polarity and fall speed of rain drop are calculated. From the fall speed drop diameter also can be calculated. The prototype is now under test running at CESS campus. As the magnitude of charge in rain drops is an indication of accumulated charge in clouds in lightning, this instrument has potential application in the field of risk and disaster management. By knowing the charge

  4. Search For Trapped Antihydrogen

    CERN Document Server

    Andresen, Gorm B; Baquero-Ruiz, Marcelo; Bertsche, William; Bowe, Paul D; Bray, Crystal C; Butler, Eoin; Cesar, Claudio L; Chapman, Steven; Charlton, Michael; Fajans, Joel; Friesen, Tim; Fujiwara, Makoto C; Gill, David R; Hangst, Jeffrey S; Hardy, Walter N; Hayano, Ryugo S; Hayden, Michael E; Humphries, Andrew J; Hydomako, Richard; Jonsell, Svante; Jørgensen, Lars V; Kurchaninov, Lenoid; Lambo, Ricardo; Madsen, Niels; Menary, Scott; Nolan, Paul; Olchanski, Konstantin; Olin, Art; Povilus, Alexander; Pusa, Petteri; Robicheaux, Francis; Sarid, Eli; Nasr, Sarah Seif El; Silveira, Daniel M; So, Chukman; Storey, James W; Thompson, Robert I; van der Werf, Dirk P; Wilding, Dean; Wurtele, Jonathan S; Yamazaki, Yasunori

    2011-01-01

    We present the results of an experiment to search for trapped antihydrogen atoms with the ALPHA antihydrogen trap at the CERN Antiproton Decelerator. Sensitive diagnostics of the temperatures, sizes, and densities of the trapped antiproton and positron plasmas have been developed, which in turn permitted development of techniques to precisely and reproducibly control the initial experimental parameters. The use of a position-sensitive annihilation vertex detector, together with the capability of controllably quenching the superconducting magnetic minimum trap, enabled us to carry out a high-sensitivity and low-background search for trapped synthesised antihydrogen atoms. We aim to identify the annihilations of antihydrogen atoms held for at least 130 ms in the trap before being released over ~30 ms. After a three-week experimental run in 2009 involving mixing of 10^7 antiprotons with 1.3 10^9 positrons to produce 6 10^5 antihydrogen atoms, we have identified six antiproton annihilation events that are consist...

  5. A fault-tolerant voltage measurement method for series connected battery packs

    Science.gov (United States)

    Xia, Bing; Mi, Chris

    2016-03-01

    This paper proposes a fault-tolerant voltage measurement method for battery management systems. Instead of measuring the voltage of individual cells, the proposed method measures the voltage sum of multiple battery cells without additional voltage sensors. A matrix interpretation is developed to demonstrate the viability of the proposed sensor topology to distinguish between sensor faults and cell faults. A methodology is introduced to isolate sensor and cell faults by locating abnormal signals. A measurement electronic circuit is proposed to implement the design concept. Simulation and experiment results support the mathematical analysis and validate the feasibility and robustness of the proposed method. In addition, the measurement problem is generalized and the condition for valid sensor topology is discovered. The tuning of design parameters are analyzed based on fault detection reliability and noise levels.

  6. Characteristics of Ion Activation and Collision Induced Dissociation Using Digital Ion Trap Technology

    Science.gov (United States)

    Xu, Fuxing; Dang, Qiankun; Dai, Xinhua; Fang, Xiang; Wang, Yuanyuan; Ding, Li; Ding, Chuan-Fan

    2016-08-01

    Collision induced dissociation (CID) is one of the most established techniques for tandem mass spectrometry analysis. The CID of mass selected ion could be realized by ion resonance excitation with a digital rectangular waveform. The method is simple, and highly efficient CID result could be obtained by optimizing the experimental parameters, such as digital waveform voltage, frequency, and q value. In this work, the relationship between ion trapping waveform voltage and frequency at preselected q value, the relationship between waveform frequency and the q value at certain ion trapping voltage for optimum CID efficiency were investigated. Experiment results showed that the max CID efficiency of precursor reserpine ions can be obtained at different trapping waveform voltage and frequency when q and β are different. Based on systematic experimental analysis, the optimum experimental conditions for high CID efficiency can be calculated at any selected β or q. By using digital ion trap technology, the CID process and efficient fragmentation of parent ions can be realized by simply changing the trapping waveform amplitude, frequency, and the β values in the digital ion trap mass spectrometry. The technology and method are simple. It has potential use in ion trap mass spectrometry.

  7. Magneto-mechanical trapping systems for biological target detection

    KAUST Repository

    Li, Fuquan

    2014-03-29

    We demonstrate a magnetic microsystem capable of detecting nucleic acids via the size difference between bare magnetic beads and bead compounds. The bead compounds are formed through linking nonmagnetic beads and magnetic beads by the target nucleic acids. The system comprises a tunnel magneto-resistive (TMR) sensor, a trapping well, and a bead-concentrator. The TMR sensor detects the stray field of magnetic beads inside the trapping well, while the sensor output depends on the number of beads. The size of the bead compounds is larger than that of bare magnetic beads, and fewer magnetic beads are required to fill the trapping well. The bead-concentrator, in turn, is capable of filling the trap in a controlled fashion and so to shorten the assay time. The bead-concentrator includes conducting loops surrounding the trapping well and a conducting line underneath. The central conducting line serves to attract magnetic beads in the trapping well and provides a magnetic field to magnetize them so to make them detectable by the TMR sensor. This system excels by its simplicity in that the DNA is incubated with magnetic and nonmagnetic beads, and the solution is then applied to the chip and analyzed in a single step. In current experiments, a signal-to-noise ratio of 40.3 dB was obtained for a solution containing 20.8 nM of DNA. The sensitivity and applicability of this method can be controlled by the size or concentration of the nonmagnetic bead, or by the dimension of the trapping well.

  8. Device for monitoring cell voltage

    Science.gov (United States)

    Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  9. High voltage pulse generator

    Science.gov (United States)

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  10. A Brief Presentation of Lanzhou Penning Trap Control System

    Institute of Scientific and Technical Information of China (English)

    田玉林; 黄文学; 王均英; 孙宇梁; 王玥; 朱志超; 赵建民; 徐瑚珊; 肖国青

    2012-01-01

    LPT (Lanzhou Penning Trap) is an ion-trap facility in Lanzhou, China. As ions can be cooled to an extremely small phase space and can be stored for a very long time, ion traps are a perfect instrument for high precision mass measurements. A system with specialized electronics for LPT is under construction now. This system could be used for voltage and timing control to make ions moving in a special mode, and the data acquisition and analysis online/offline could be achieved in the mean time. The requirements of control system, the distribution of hardware, the overview of software, and the latest progress of LPTCtrlSys (Lanzhou Penning Trap Control System) are presented.

  11. Trapped-space-charge-limited currents in organics

    Energy Technology Data Exchange (ETDEWEB)

    Paasch, Gernot [IFW Dresden (Germany); Blom, Paul; Mandoc, Magda; Boer, Bert de [University of Groningen (Netherlands)

    2007-07-01

    The Mott-Gurney law for space charge limited current (SCLC) has been modified early to account for the presence of exponentially distributed traps. This expression has been widely used to analyse transport in organic light emitting diodes. However, the theory fails to describe the rather weak temperature dependence observed for electron transport, for instance in PPV derivatives. There we have shown that the trap-limited SCLC law is essentially modified if the density of transport states is of Gaussian type. Here, we discuss the origin of this modification and present a detailed analysis of the modified law. In addition, we derive further modifications for different combinations of densities of states of both the transport states and the trap distribution. As a result, rather different dependencies of the current on voltage, layer thickness and temperature are possible. Consequently, one has to exercise care in order to obtain reliable trap parameters from SCLC.

  12. Metal oxide-graphene field-effect transistor: interface trap density extraction model

    Directory of Open Access Journals (Sweden)

    Faraz Najam

    2016-09-01

    Full Text Available A simple to implement model is presented to extract interface trap density of graphene field effect transistors. The presence of interface trap states detrimentally affects the device drain current–gate voltage relationship Ids–Vgs. At the moment, there is no analytical method available to extract the interface trap distribution of metal-oxide-graphene field effect transistor (MOGFET devices. The model presented here extracts the interface trap distribution of MOGFET devices making use of available experimental capacitance–gate voltage Ctot–Vgs data and a basic set of equations used to define the device physics of MOGFET devices. The model was used to extract the interface trap distribution of 2 experimental devices. Device parameters calculated using the extracted interface trap distribution from the model, including surface potential, interface trap charge and interface trap capacitance compared very well with their respective experimental counterparts. The model enables accurate calculation of the surface potential affected by trap charge. Other models ignore the effect of trap charge and only calculate the ideal surface potential. Such ideal surface potential when used in a surface potential based drain current model will result in an inaccurate prediction of the drain current. Accurate calculation of surface potential that can later be used in drain current model is highlighted as a major advantage of the model.

  13. System for improving measurement accuracy of transducer by measuring transducer temperature and resistance change using thermoelectric voltages

    Science.gov (United States)

    Anderson, Karl F. (Inventor); Parker, Allen R., Jr. (Inventor)

    1993-01-01

    A constant current loop measuring system measures a property including the temperature of a sensor responsive to an external condition being measured. The measuring system includes thermocouple conductors connected to the sensor, sensing first and second induced voltages responsive to the external condition. In addition, the measuring system includes a current generator and reverser generating a constant current, and supplying the constant current to the thermocouple conductors in forward and reverse directions generating first and second measured voltages, and a determining unit receiving the first and second measured voltages from the current generator and reverser, and determining the temperature of the sensor responsive to the first and second measured voltages.

  14. Low voltage integrated optics electro-optical modulator applied to optical voltage transformer based on WLI technique

    Science.gov (United States)

    Santos, J. C.; Rubini, J.; Silva, L. P. C.; Caetano, R. E.

    2015-09-01

    The use of two electro-optical modulators linked in series, one for sensing and one for recovering signals, was formerly presented by some of the authors as a solution for interrogation of optical fiber sensor systems based on WLI method. A key feature required from such systems is that half-wave voltage (Vπ) of recovering modulator must be as small as possible. Aiming at meeting this requirement, in this paper it is presented the use of an unbalanced Michelson Interferometer implemented using an integrated optics component as recover interferometer in an optical voltage transformer intended for high voltage measurements.

  15. Voltage Regulators for Photovoltaic Systems

    Science.gov (United States)

    Delombard, R.

    1986-01-01

    Two simple circuits developed to provide voltage regulation for highvoltage (i.e., is greater than 75 volts) and low-voltage (i.e., is less than 36 volts) photovoltaic/battery power systems. Use of these circuits results in voltage regulator small, low-cost, and reliable, with very low power dissipation. Simple oscillator circuit controls photovoltaic-array current to regulate system voltage and control battery charging. Circuit senses battery (and system) voltage and adjusts array current to keep battery voltage from exceeding maximum voltage.

  16. Voltage-sensitive rhodol with enhanced two-photon brightness.

    Science.gov (United States)

    Kulkarni, Rishikesh U; Kramer, Daniel J; Pourmandi, Narges; Karbasi, Kaveh; Bateup, Helen S; Miller, Evan W

    2017-03-14

    We have designed, synthesized, and applied a rhodol-based chromophore to a molecular wire-based platform for voltage sensing to achieve fast, sensitive, and bright voltage sensing using two-photon (2P) illumination. Rhodol VoltageFluor-5 (RVF5) is a voltage-sensitive dye with improved 2P cross-section for use in thick tissue or brain samples. RVF5 features a dichlororhodol core with pyrrolidyl substitution at the nitrogen center. In mammalian cells under one-photon (1P) illumination, RVF5 demonstrates high voltage sensitivity (28% ΔF/F per 100 mV) and improved photostability relative to first-generation voltage sensors. This photostability enables multisite optical recordings from neurons lacking tuberous sclerosis complex 1, Tsc1, in a mouse model of genetic epilepsy. Using RVF5, we show that Tsc1 KO neurons exhibit increased activity relative to wild-type neurons and additionally show that the proportion of active neurons in the network increases with the loss of Tsc1. The high photostability and voltage sensitivity of RVF5 is recapitulated under 2P illumination. Finally, the ability to chemically tune the 2P absorption profile through the use of rhodol scaffolds affords the unique opportunity to image neuronal voltage changes in acutely prepared mouse brain slices using 2P illumination. Stimulation of the mouse hippocampus evoked spiking activity that was readily discerned with bath-applied RVF5, demonstrating the utility of RVF5 and molecular wire-based voltage sensors with 2P-optimized fluorophores for imaging voltage in intact brain tissue.

  17. Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

    Directory of Open Access Journals (Sweden)

    Joung-min Cho

    2013-10-01

    Full Text Available We have investigated trap density of states (trap DOS in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexylnaphthalene diimide (Cy-NDI and dimethyldicyanoquinonediimine (DMDCNQI. A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulated characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical VG above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge.

  18. Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Joung-min, E-mail: cho.j.ad@m.titech.ac.jp; Akiyama, Yuto; Kakinuma, Tomoyuki [Department of Organic and Polymeric Materials, Tokyo Institute of Technology, O-okayama, Tokyo 152-8552 (Japan); Mori, Takehiko [Department of Organic and Polymeric Materials, Tokyo Institute of Technology, O-okayama, Tokyo 152-8552 (Japan); ACT-C, JST, Honcho, Kawaguchi, Saitama 332-0012 (Japan)

    2013-10-15

    We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulated characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical V{sub G} above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge.

  19. High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    Science.gov (United States)

    Shimer, Daniel W.; Lange, Arnold C.

    1995-01-01

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  20. Studying Voltage Transformer Ferroresonance

    Directory of Open Access Journals (Sweden)

    Hamid Radmanesh

    2012-09-01

    Full Text Available This study studies the effect of Circuit Breaker Shunt Resistance (CBSR, Metal Oxide Vaistor (MOV and Neutral earth Resistance (NR on the control of ferroresonance in the voltage transformer. It is expected that NR can controlled ferroresonance better than MOV and CBSR. Study has been done on a one phase voltage transformer rated 100 VA, 275 kV. The simulation results reveal that considering the CBSR and MOV exhibits a great mitigating effect on ferroresonance overvoltages, but these resistances cannot control these phenomena for all range of parameters. By applying NR to the system structure, ferroresonance has been controlled and its amplitude has been damped for all parameters values.

  1. Modular sensor network node

    Science.gov (United States)

    Davis, Jesse Harper Zehring; Stark, Jr., Douglas Paul; Kershaw, Christopher Patrick; Kyker, Ronald Dean

    2008-06-10

    A distributed wireless sensor network node is disclosed. The wireless sensor network node includes a plurality of sensor modules coupled to a system bus and configured to sense a parameter. The parameter may be an object, an event or any other parameter. The node collects data representative of the parameter. The node also includes a communication module coupled to the system bus and configured to allow the node to communicate with other nodes. The node also includes a processing module coupled to the system bus and adapted to receive the data from the sensor module and operable to analyze the data. The node also includes a power module connected to the system bus and operable to generate a regulated voltage.

  2. Penning trap at IGISOL

    Energy Technology Data Exchange (ETDEWEB)

    Szerypo, J. E-mail: jerzy.szerypo@phys.jyu.fi; Jokinen, A.; Kolhinen, V.S.; Nieminen, A.; Rinta-Antila, S.; Aeystoe, J

    2002-04-22

    The IGISOL facility at the Department of Physics of the University of Jyvaeskylae (JYFL) is delivering radioactive beams of short-lived exotic nuclei, in particular the neutron-rich isotopes from the fission reaction. These nuclei are studied with the nuclear spectroscopy methods. In order to substantially increase the quality and sensitivity of such studies, the beam should undergo beam handling: cooling, bunching and isobaric purification. The first two processes are performed with the use of an RFQ cooler/buncher. The isobaric purification will be made by a Penning trap placed after the RF-cooler element. This contribution describes the current status of the Penning trap project and its future prospects. The latter comprise the precise nuclear mass measurements, nuclear spectroscopy in the Penning trap interior as well as the laser spectroscopy on the extracted beams.

  3. Non-Invasive Electro-Magnetic Field Sensor.

    Science.gov (United States)

    1986-01-01

    69 30 Fiber optic sensor’s response to a pulsed electric field . 74 31 Fiber optic electric field sensor’s response to an oscil- latory field...first test type involved a pulsed electric field . The applied voltage pulse was negative with a peak voltage of approxi- mately -24,000 volts and a

  4. Power lateral pnp transistor operating with high current density in irradiated voltage regulator

    Directory of Open Access Journals (Sweden)

    Vukić Vladimir Đ.

    2013-01-01

    Full Text Available The operation of power lateral pnp transistors in gamma radiation field was examined by detection of the minimum dropout voltage on heavily loaded low-dropout voltage regulators LM2940CT5, clearly demonstrating their low radiation hardness, with unacceptably low values of output voltage and collector-emitter voltage volatility. In conjunction with previous results on base current and forward emitter current gain of serial transistors, it was possible to determine the positive influence of high load current on a slight improvement of voltage regulator LM2940CT5 radiation hardness. The high-current flow through the wide emitter aluminum contact of the serial transistor above the isolation oxide caused intensive annealing of the positive oxide-trapped charge, leading to decrease of the lateral pnp transistor's current gain, but also a more intensive recovery of the small-signal npn transistors in the control circuit. The high current density in the base area of the lateral pnp transistor immediately below the isolation oxide decreased the concentration of negative interface traps. Consequently, the positive influence of the reduced concentration of the oxide-trapped charge on the negative feedback reaction circuit, together with the favourable effect of reduced interface traps concentration, exceeded negative influence of the annealed oxide-trapped charge on the serial pnp transistor's forward emitter current gain.

  5. Trapping molecules on chips

    CERN Document Server

    Santambrogio, Gabriele

    2015-01-01

    In the last years, it was demonstrated that neutral molecules can be loaded on a microchip directly from a supersonic beam. The molecules are confined in microscopic traps that can be moved smoothly over the surface of the chip. Once the molecules are trapped, they can be decelerated to a standstill, for instance, or pumped into selected quantum states by laser light or microwaves. Molecules are detected on the chip by time-resolved spatial imaging, which allows for the study of the distribution in the phase space of the molecular ensemble.

  6. The Reusable Astronomy Portal (TRAP)

    Science.gov (United States)

    Donaldson, T.; Rogers, A.; Wallace, G.

    2012-09-01

    The Reusable Astronomy Portal (TRAP) aims to provide a common platform for rapidly deploying Astronomy Archives to the web. TRAP is currently under development for both the VAO Data Discovery Portal and the MAST Multi-Mission Portal (Figure 1). TRAP consists of 2 major software packages: the TRAP Client and the TRAP Server. The TRAP framework allows developers to deploy the Server, connect to data resources, then focus on building custom tools for the Client. TRAP is built upon proven industry technologies including the Ext/JS JavaScript Component Library, Mono.NET Web Services, and JSON message based APIs. The multi-layered architecture of TRAP decouples each layer: Client, Service and Data Access, enabling each to evolve independently over time. Although currently deployed to provide astronomy science data access, the TRAP architecture is flexible enough to thrive in any distributed data environment.

  7. VOLTAGE REGULATORS ASYNCHRONOUS GENERATORS

    Directory of Open Access Journals (Sweden)

    Grigorash O. V.

    2015-06-01

    Full Text Available A promising is currently the use of asynchronous generators with capacitive excitation as a source of electricity in stand-alone power systems. Drive asynchronous generators may exercise as a thermal engine and wind wheel wind power plant or turbines of small hydropower plants. The article discusses the structural and schematics of voltage stabilizers and frequency of asynchronous generators with improved operational and technical specifications. Technical novelty of design solutions of the magnetic system and stabilizers asynchronous generator of electricity parameters confirmed by the patents for the invention of the Russian Federation. The proposed technical solution voltage stabilizer asynchronous generators, can reduce the weight of the block capacitors excitation and reactive power compensation, as well as to simplify the control system power circuit which has less power electronic devices. For wind power plants it is an important issue not only to stabilize the voltage of the generator, but also the frequency of the current. Recommend functionality stabilizer schemes parameters of electric power made for direct frequency converters with artificial and natural switching power electronic devices. It is also proposed as part of stabilization systems use single-phase voltage, three-phase transformers with rotating magnetic field, reduce the level of electromagnetic interference generated by power electronic devices for switching, enhance the efficiency and reliability of the stabilizer.

  8. Geomagnetism and Induced Voltage

    Science.gov (United States)

    Abdul-Razzaq, W.; Biller, R. D.

    2010-01-01

    Introductory physics laboratories have seen an influx of "conceptual integrated science" over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it…

  9. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  10. Study of the discharge gas trapping during thin film growth

    CERN Document Server

    Calatroni, Sergio; Anderle, M; Benvenuti, Cristoforo; Carver, J; Chiggiato, P; Neupert, H; Vollenberg, W

    2001-01-01

    Discharge gas trapping in thin films produced by sputtering is known to be due to high energy neutrals bouncing back from the cathode. Qualitatively, the phenomenon is enhanced by raising the discharge voltage and is strongly dependent on the atomic masses of the discharge gas and of the cathode material. In addition to these known effects it is shown that, for a given gas, the trapped amount decreases with increasing the melting temperature of the deposited material. The results obtained both by sample melting and laser ablation are presented and discussed.

  11. Non-contact current and voltage sensing method using a clamshell housing and a ferrite cylinder

    Science.gov (United States)

    Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C.; Schappert, Michael

    2016-04-26

    A method of measurement using a detachable current and voltage sensor provides an isolated and convenient technique for to measuring current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  12. Optically monitoring voltage in neurons by photo-induced electron transfer through molecular wires.

    Science.gov (United States)

    Miller, Evan W; Lin, John Y; Frady, E Paxon; Steinbach, Paul A; Kristan, William B; Tsien, Roger Y

    2012-02-07

    Fluorescence imaging is an attractive method for monitoring neuronal activity. A key challenge for optically monitoring voltage is development of sensors that can give large and fast responses to changes in transmembrane potential. We now present fluorescent sensors that detect voltage changes in neurons by modulation of photo-induced electron transfer (PeT) from an electron donor through a synthetic molecular wire to a fluorophore. These dyes give bigger responses to voltage than electrochromic dyes, yet have much faster kinetics and much less added capacitance than existing sensors based on hydrophobic anions or voltage-sensitive ion channels. These features enable single-trial detection of synaptic and action potentials in cultured hippocampal neurons and intact leech ganglia. Voltage-dependent PeT should be amenable to much further optimization, but the existing probes are already valuable indicators of neuronal activity.

  13. Sensor Technology Baseline Study for Enabling Condition Based Maintenance Plus in Army Ground Vehicles

    Science.gov (United States)

    2012-03-01

    and mechanisms are identified. Based on this analysis, baselines sensor technologies are determined to prognosticate these types failure causes early...Current/voltage sensor measured at sensor terminals; Fluid level sensor Excessive slippage and clutch chatter Internal transmission failure ... TYPE Final 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE Sensor Technology Baseline Study for Enabling Condition Based Maintenance Plus in

  14. Redesigning octopus traps

    Directory of Open Access Journals (Sweden)

    Eduarda Gomes

    2014-06-01

    In order to minimise the identified problems in the actual traps, the present work proposes a new design with the aim of reducing the volume and weight during transport, and also during onshore storage. Alternative materials to avoid corrosion and formation of encrustations were also proposed.

  15. Single Microwave Photon Detection with a Trapped Electron

    Directory of Open Access Journals (Sweden)

    April Cridland

    2016-11-01

    Full Text Available We investigate theoretically the use of an electron in a Penning trap as a detector of single microwave photons. At the University of Sussex we are developing a chip Penning trap technology, designed to be integrated within quantum circuits. Microwave photons are guided into the trap and interact with the electron’s quantum cyclotron motion. This is an electric dipole transition, where the near field of the microwave radiation induces quantum jumps of the cyclotron harmonic oscillator. The quantum jumps can be monitored using the continuous Stern-Gerlach effect, providing the quantum non demolition signal of the microwave quanta. We calculate the quantum efficiency of photon detection and discuss the main features and technical challenges for the trapped electron as a quantum microwave sensor.

  16. Ion sponge: a 3-dimentional array of quadrupole ion traps for trapping and mass-selectively processing ions in gas phase.

    Science.gov (United States)

    Xu, Wei; Li, Linfan; Zhou, Xiaoyu; Ouyang, Zheng

    2014-05-01

    In this study, the concept of ion sponge has been explored for developing 3D arrays of large numbers of ion traps but with simple configurations. An ion sponge device with 484 trapping units in a volume of 10 × 10 × 3.2 cm has been constructed by simply stacking 9 meshes together. A single rf was used for trapping ions and mass-selective ion processing. The ion sponge provides a large trapping capacity and is highly transparent for transfer of ions, neutrals, and photons for gas phase ion processing. Multiple layers of quadrupole ion traps, with 121 trapping units in each layer, can operate as a single device for MS or MS/MS analysis, or as a series of mass-selective trapping devices with interlayer ion transfers facilitated by AC and DC voltages. Automatic sorting of ions to different trapping layers based on their mass-to-charge (m/z) ratios was achieved with traps of different sizes. Tandem-in-space MS/MS has also been demonstrated with precursor ions and fragment ions trapped in separate locations.

  17. KCNQ1 Channels Voltage Dependence through a Voltage-dependent Binding of the S4-S5 Linker to the Pore Domain*

    OpenAIRE

    2010-01-01

    Voltage-dependent potassium (Kv) channels are tetramers of six transmembrane domain (S1–S6) proteins. Crystallographic data demonstrate that the tetrameric pore (S5–S6) is surrounded by four voltage sensor domains (S1–S4). One key question remains: how do voltage sensors (S4) regulate pore gating? Previous mutagenesis data obtained on the Kv channel KCNQ1 highlighted the critical role of specific residues in both the S4-S5 linker (S4S5L) and S6 C terminus (S6T). From these data, we hypothesiz...

  18. VFT PHASE VOLTAGE MEASUREMENT IN THREE-PHASE ENCLOSED GIS

    Institute of Scientific and Technical Information of China (English)

    邹建华; 岳子丁; 李洋

    2002-01-01

    The measuring of VFT phase voltage in three-phase enclosed GIS is more complex and difficult than in single-phase ones. There are 3 capacitive sensors in the measuring system, the outputs of which are with a linear relation to the three phase voltages. This linear relation is presented with a factorial matrix. Because each capacitive sensor is coupled with the electric field of three phases (A, B, and C), the electric coupling coefficients are introduced. In order to determine the matrix of electric coupling coefficients, the numerical calculation method can be used. From the discussion on two types of three-phase enclosed GIS bus, i.e. standard arrangement and biased arrangement, the dominant electric coupling coefficients are named, which can be simply and approximately calculated by an analytic expression. Finally, as an example, the waveforms of VFT phase voltage generated on a three-phase enclosed GIS bus model are displayed. When a capacitive sensor is located at the 'shortest point' of phase A (or B, or C), the VFT phase voltage VA (or VB, or VC) can almost be measured by that capacitive sensor alone.

  19. Optogenetic Monitoring of Synaptic Activity with Genetically Encoded Voltage Indicators

    Science.gov (United States)

    Nakajima, Ryuichi; Jung, Arong; Yoon, Bong-June; Baker, Bradley J.

    2016-01-01

    The age of genetically encoded voltage indicators (GEVIs) has matured to the point that changes in membrane potential can now be observed optically in vivo. Improving the signal size and speed of these voltage sensors has been the primary driving forces during this maturation process. As a result, there is a wide range of probes using different voltage detecting mechanisms and fluorescent reporters. As the use of these probes transitions from optically reporting membrane potential in single, cultured cells to imaging populations of cells in slice and/or in vivo, a new challenge emerges—optically resolving the different types of neuronal activity. While improvements in speed and signal size are still needed, optimizing the voltage range and the subcellular expression (i.e., soma only) of the probe are becoming more important. In this review, we will examine the ability of recently developed probes to report synaptic activity in slice and in vivo. The voltage-sensing fluorescent protein (VSFP) family of voltage sensors, ArcLight, ASAP-1, and the rhodopsin family of probes are all good at reporting changes in membrane potential, but all have difficulty distinguishing subthreshold depolarizations from action potentials and detecting neuronal inhibition when imaging populations of cells. Finally, we will offer a few possible ways to improve the optical resolution of the various types of neuronal activities. PMID:27547183

  20. Deployment of low-voltage regulator considering existing voltage control in medium-voltage distribution systems

    Directory of Open Access Journals (Sweden)

    Hiroshi Kikusato

    2016-01-01

    Full Text Available Many photovoltaic (PV systems have been installed in distribution systems. This installation complicates the maintenance of all voltages within the appropriate range in all low-voltage distribution systems (LVDSs because the trends in voltage fluctuation differ in each LVDS. The installation of a low-voltage regulator (LVR that can accordingly control the voltage in each LVDS has been studied as a solution to this problem. Voltage control in a medium-voltage distribution system must be considered to study the deployment of LVRs. In this study, we installed LVRs in the LVDSs in which the existing voltage-control scheme cannot prevent voltage deviation and performed a numerical simulation by using a distribution system model with PV to evaluate the deployment of the LVRs.

  1. Analyzing of Dynamic Voltage Restorer in Series Compensation Voltage

    Directory of Open Access Journals (Sweden)

    Naser Parhizgar

    2012-02-01

    Full Text Available The Dynamic Voltage Restorer (DVR is a series-connected compensator to generate a controllable voltage to against the short-term voltage disturbances. The technique of DVR is an effective and cost competitive approach to improve voltage quality at the load side. This study presents a single-phase and threephase DVR system with reduced switch-count topology to protect the sensitive load against abnormal voltage conditions. Most basic function, the DVR configuration consist of a two level Voltage Source Converter (VSC, a dc energy storage device, a coupling transformer Connected in shunt with the ac system This study presents the application of Dynamic Voltage Restorer (DVR on power distribution systems for mitigation of voltage sag at critical loads. DVR is one of the compensating types of custom power devices. The DVR, which is based on forced-commutated Voltage Source Converter (VSC has been proved suitable for the task of compensating voltage sags/swells. Simulation results are presented to illustrate and understand the performances of DVR in supporting load voltages under voltage sags/swells conditions.

  2. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  3. Increased voltage photovoltaic cell

    Science.gov (United States)

    Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

    1985-01-01

    A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

  4. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  5. Voltage-induced reduction of graphene oxide

    Science.gov (United States)

    Faucett, Austin C.

    Graphene Oxide (GO) is being widely researched as a precursor for the mass production of graphene, and as a versatile material in its own right for flexible electronics, chemical sensors, and energy harvesting applications. Reduction of GO, an electrically insulating material, into reduced graphene oxide (rGO) restores electrical conductivity via removal of oxygen-containing functional groups. Here, a reduction method using an applied electrical bias, known as voltage-induced reduction, is explored. Voltage-induced reduction can be performed under ambient conditions and avoids the use of hazardous chemicals or high temperatures common with standard methods, but little is known about the reduction mechanisms and the quality of rGO produced with this method. This work performs extensive structural and electrical characterization of voltage-reduced GO (V-rGO) and shows that it is competitive with standard methods. Beyond its potential use as a facile and eco-friendly processing approach, V-rGO reduction also offers record high-resolution patterning capabilities. In this work, the spatial resolution limits of voltage-induced reduction, performed using a conductive atomic force microscope probe, are explored. It is shown that arbitrary V-rGO conductive features can be patterned into insulating GO with nanoscale resolution. The localization of voltage-induced reduction to length scales < 10 nm allows studies of reduction reaction kinetics, using electrical current obtained in-situ, with statistical robustness. Methods for patterning V-rGO nanoribbons are then developed. After presenting sub-10nm patterning of V-rGO nanoribbons in GO single sheets and films, the performance of V-rGO nanoribbon field effect transistors (FETs) are demonstrated. Preliminary measurements show an increase in electrical current on/off ratios as compared to large-area rGO FETs, indicating transport gap modulation that is possibly due to quantum confinement effects.

  6. Characterizing optical dipole trap via fluorescence of trapped cesium atoms

    Institute of Scientific and Technical Information of China (English)

    LIU Tao; GENG Tao; YAN Shubin; LI Gang; ZHANG Jing; WANG Junmin; PENG Kunchi; ZHANG Tiancai

    2006-01-01

    Optical dipole trap (ODT) is becoming an important tool of manipulating neutral atoms. In this paper ODT is realized with a far-off resonant laser beam strongly focused in the magneto-optical trap (MOT) of cesium atoms. The light shift is measured by simply monitoring the fluorescence of the atoms in the magneto-optical trap and the optical dipole trap simultaneously. The advantages of our experimental scheme are discussed, and the effect of the beam waist and power on the potential of dipole trap as well as heating rate is analyzed.

  7. Traps for neutral radioactive atoms

    CERN Document Server

    Sprouse, G D; Grossman, J S; Orozco, L A; Pearson, M R

    2002-01-01

    We describe several methods for efficiently injecting a small number of radioactive atoms into a laser trap. The characteristics of laser traps that make them desirable for physics experiments are discussed and several different experimental directions are described. We describe recent experiments with the alkali element Fr and point to future directions of the neutral atom trapping program.

  8. Detailed Study of Amplitude Nonlinearity in Piezoresistive Force Sensors

    OpenAIRE

    Pablo Gonzalez De Santos; Elena Garcia; Luis Emmi; Leonel Paredes-Madrid

    2011-01-01

    This article upgrades the RC linear model presented for piezoresistive force sensors. Amplitude nonlinearity is found in sensor conductance, and a characteristic equation is formulated for modeling its response under DC-driving voltages below 1 V. The feasibility of such equation is tested on four FlexiForce model A201-100 piezoresistive sensors by varying the sourcing voltage and the applied forces. Since the characteristic equation proves to be valid, a method is presented for obtaining a s...

  9. Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar;

    2013-01-01

    problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0....

  10. Detection of Trapped Antihydrogen

    CERN Document Server

    Hydomako, Richard Allan

    The ALPHA experiment is an international effort to produce, trap, and perform precision spectroscopic measurements on antihydrogen (the bound state of a positron and an antiproton). Based at the Antiproton Decelerator (AD) facility at CERN, the ALPHA experiment has recently magnetically confined antihydrogen atoms for the first time. A crucial element in the observation of trapped antihydrogen is ALPHA’s silicon vertexing detector. This detector contains sixty silicon modules arranged in three concentric layers, and is able to determine the three-dimensional location of the annihilation of an antihydrogen atom by reconstructing the trajectories of the produced annihilation products. This dissertation focuses mainly on the methods used to reconstruct the annihilation location. Specifically, the software algorithms used to identify and extrapolate charged particle tracks are presented along with the routines used to estimate the annihilation location from the convergence of the identified tracks. It is shown...

  11. Trapping ions with lasers

    CERN Document Server

    Cormick, Cecilia; Morigi, Giovanna

    2010-01-01

    This work theoretically addresses the trapping an ionized atom with a single valence electron by means of lasers, analyzing qualitatively and quantitatively the consequences of the net charge of the particle. In our model, the coupling between the ion and the electromagnetic field includes the charge monopole and the internal dipole, within a multipolar expansion of the interaction Hamiltonian. Specifically, we perform a Power-Zienau-Woolley transformation, taking into account the motion of the center of mass. The net charge produces a correction in the atomic dipole which is of order $m_e/M$ with $m_e$ the electron mass and $M$ the total mass of the ion. With respect to neutral atoms, there is also an extra coupling to the laser field which can be approximated by that of the monopole located at the position of the center of mass. These additional effects, however, are shown to be very small compared to the dominant dipolar trapping term.

  12. Coherence in Microchip Traps

    CERN Document Server

    Treutlein, P; Steinmetz, T; Hänsch, T W; Reichel, J; Treutlein, Philipp; Hommelhoff, Peter; Steinmetz, Tilo; H\\"ansch, Theodor W.; Reichel, Jakob

    2003-01-01

    We report the coherent manipulation of internal states of neutral atoms in a magnetic microchip trap. Coherence lifetimes exceeding 1 s are observed with atoms at distances of $4-130 \\mu$m from the microchip surface. The coherence lifetime in the microtrap is independent of atom-surface distance and agrees well with the results of similar measurements in macroscopic magnetic traps. Due to the absence of surface-induced decoherence, a miniaturized atomic clock with a relative stability in the $10^{-13}$ range can be realized. For applications in quantum information processing, we propose to use microwave near-fields in the proximity of chip wires to create potentials that depend on the internal state of the atoms.

  13. Voltage Controlled Dynamic Demand Response

    DEFF Research Database (Denmark)

    Bhattarai, Bishnu Prasad; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    . An adaptive dynamic model has been developed to determine composite voltage dependency of an aggregated load on feeder level. Following the demand dispatch or control signal, optimum voltage setting at the LV substation is determined based on the voltage dependency of the load. Furthermore, a new technique...

  14. Charge-pump voltage converter

    Science.gov (United States)

    Brainard, John P.; Christenson, Todd R.

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  15. Ion Trap Quantum Computing

    Science.gov (United States)

    2011-12-01

    an inspiring speech at the MIT Physics of Computation 1st Conference in 1981, Feynman proposed the development of a computer that would obey the...on ion trap based 36 quantum computing for physics and computer science students would include lecture notes, slides, lesson plans, a syllabus...reading lists, videos, demonstrations, and laboratories. 37 LIST OF REFERENCES [1] R. P. Feynman , “Simulating physics with computers,” Int. J

  16. Attonewton force detection using microspheres in a dual-beam optical trap in high vacuum

    CERN Document Server

    Ranjit, Gambhir; Stutz, Jordan H; Cunningham, Mark; Geraci, Andrew A

    2015-01-01

    We describe the implementation of laser-cooled silica microspheres as force sensors in a dual-beam optical dipole trap in high vacuum. Using this system we have demonstrated trap lifetimes exceeding several days, attonewton force detection capability, and wide tunability in trapping and cooling parameters. Measurements have been performed with charged and neutral beads to calibrate the sensitivity of the detector. This work establishes the suitability of dual beam optical dipole traps for precision force measurement in high vacuum with long averaging times, and enables future applications including the study of gravitational inverse square law violations at short range, Casimir forces, acceleration sensing, and quantum opto-mechanics.

  17. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  18. Water-Trapped Worlds

    CERN Document Server

    Menou, Kristen

    2013-01-01

    Although tidally-locked habitable planets orbiting nearby M-dwarf stars are among the best astronomical targets to search for extrasolar life, they may also be deficient in volatiles and water. Climate models for this class of planets show atmospheric transport of water from the dayside to the nightside, where it is precipitated as snow and trapped as ice. Since ice only slowly flows back to the dayside upon accumulation, the resulting hydrological cycle can trap a large amount of water in the form of nightside ice. Using ice sheet dynamical and thermodynamical constraints, I illustrate how planets with less than about a quarter the Earth's oceans could trap most of their surface water on the nightside. This would leave their dayside, where habitable conditions are met, potentially dry. The amount and distribution of residual liquid water on the dayside depend on a variety of geophysical factors, including the efficiency of rock weathering at regulating atmospheric CO2 as dayside ocean basins dry-up. Water-tr...

  19. Scalable Digital Hardware for a Trapped Ion Quantum Computer

    CERN Document Server

    Mount, Emily; Vrijsen, Geert; Adams, Michael; Baek, So-Young; Hudek, Kai; Isabella, Louis; Crain, Stephen; van Rynbach, Andre; Maunz, Peter; Kim, Jungsang

    2015-01-01

    Many of the challenges of scaling quantum computer hardware lie at the interface between the qubits and the classical control signals used to manipulate them. Modular ion trap quantum computer architectures address scalability by constructing individual quantum processors interconnected via a network of quantum communication channels. Successful operation of such quantum hardware requires a fully programmable classical control system capable of frequency stabilizing the continuous wave lasers necessary for trapping and cooling the ion qubits, stabilizing the optical frequency combs used to drive logic gate operations on the ion qubits, providing a large number of analog voltage sources to drive the trap electrodes, and a scheme for maintaining phase coherence among all the controllers that manipulate the qubits. In this work, we describe scalable solutions to these hardware development challenges.

  20. Parallel transport quantum logic gates with trapped ions

    CERN Document Server

    de Clercq, Ludwig; Marinelli, Matteo; Nadlinger, David; Oswald, Robin; Negnevitsky, Vlad; Kienzler, Daniel; Keitch, Ben; Home, Jonathan P

    2015-01-01

    Quantum information processing will require combinations of gate operations and communication, with each applied in parallel to large numbers of quantum systems. These tasks are often performed sequentially, with gates implemented by pulsed fields and information transported either by moving the physical qubits or using photonic links. For trapped ions, an alternative approach is to implement quantum logic gates by transporting the ions through static laser beams, combining qubit operations with transport. This has significant advantages for scalability since the voltage waveforms required for transport can potentially be generated using micro-electronics integrated into the trap structure itself, while both optical and microwave control elements are significantly more bulky. Using a multi-zone ion trap, we demonstrate transport gates on a qubit encoded in the hyperfine structure of a beryllium ion. We show the ability to perform sequences of operations, and to perform parallel gates on two ions transported t...

  1. Ion trap with integrated time-of-flight mass spectrometer

    CERN Document Server

    Schneider, Christian; Yu, Peter; Hudson, Eric R

    2015-01-01

    Recently, we reported an ion trap experiment with an integrated time-of-flight mass spectrometer (TOFMS) [Phys. Rev. Appl. 2, 034013 (2014)] focussing on the improvement of mass resolution and detection limit due to sample preparation at millikelvin temperatures. The system utilizes a radio-frequency (RF) ion trap with asymmetric drive for storing and manipulating laser-cooled ions and features radial extraction into a compact $275$ mm long TOF drift tube. The mass resolution exceeds $m / \\Delta m = 500$, which provides isotopic resolution over the whole mass range of interest in current experiments and constitutes an improvement of almost an order of magnitude over other implementations. In this manuscript, we discuss the experimental implementation in detail, which is comprised of newly developed drive electronics for generating the required voltages to operate RF trap and TOFMS, as well as control electronics for regulating RF outputs and synchronizing the TOFMS extraction.

  2. The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses

    Institute of Scientific and Technical Information of China (English)

    Wang Yan-Gang; Xu Ming-Zhen; Tan Chang-Hua; Zhang Zhang J.F; Duan Xiao-Rong

    2005-01-01

    The conduction mechanism of stress induced leakage current (SILC) through 2nm gate oxide is studied over a gate voltage range between 1.7V and stress voltage under constant voltage stress (CVS). The simulation results show that the SILC is formed by trap-assisted tunnelling (TAT) process which is dominated by oxide traps induced by high field stresses. Their energy levels obtained by this work are approximately 1.9eV from the oxide conduction band, and the traps are believed to be the oxygen-related donor-like defects induced by high field stresses. The dependence of the trap density on stress time and oxide electric field is also investigated.

  3. Formation of oxide-trapped charges in 6H-SiC MOS structures

    Energy Technology Data Exchange (ETDEWEB)

    Yoshikawa, Masahito; Ohshima, Takeshi; Itoh, Hisayoshi; Nashiyama, Isamu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Okumura, Hajime; Yoshida, Sadafumi

    1997-03-01

    The silicon and the carbon faces of hexagonal silicon carbide (6H-SiC) substrates were oxidized pyrogenically at 1100degC, and the metal-oxide-semiconductor structures were formed on these faces. The MOS capacitors developed using the silicon and the carbon faces were irradiated with {sup 60}Co gamma-rays under argon atmosphere at room temperature. The bias voltages with the different polarity were applied to the gate electrode during irradiation to examine the formation mechanisms of the trapped charges in the oxides of these MOS capacitors. The amount of the trapped charges in the oxide were obtained from capacitance pulse voltage characteristics. The generation of the trapped charges are affects with not only the absorbed dose but also the bias polarity applied to the gate electrodes during irradiation. The formation mechanisms of the trapped charges in the oxides were estimated in conjunction with the surface orientation of 6H-SiC substrates. (author)

  4. Ion injection optimization for a linear Paul trap to study intense beam propagation

    Directory of Open Access Journals (Sweden)

    Moses Chung

    2007-01-01

    Full Text Available The Paul Trap Simulator Experiment (PTSX is a linear Paul trap whose purpose is to simulate the nonlinear transverse dynamics of intense charged particle beam propagation in periodic-focusing quadrupole magnetic transport systems. Externally created cesium ions are injected and trapped in the long central electrodes of the PTSX device. In order to have well-matched one-component plasma equilibria for various beam physics experiments, it is important to optimize the ion injection. From the experimental studies reported in this paper, it is found that the injection process can be optimized by minimizing the beam mismatch between the source and the focusing lattice, and by minimizing the number of particles present in the vicinity of the injection electrodes when the injection electrodes are switched from the fully oscillating voltage waveform to their static trapping voltage.

  5. Recommendation of Sensors for Vehicle Transmission Diagnostics

    Science.gov (United States)

    2012-05-01

    module. This could degrade the operation of the solenoid to the point that there is a failure or the clutch plates could stick. The viscosity of...Voltage sensor measured at sensor terminals; Fluid level sensor Excessive slippage and Clutch chatter Internal transmission failure ; Faulty torque...ADDRESS. 1. REPORT DATE (DD-MM-YYYY) May 2012 2. REPORT TYPE 3. DATES COVERED (From - To) October 2010 to September 2011 4. TITLE AND SUBTITLE

  6. Voltage balancing strategies for serial connection of microbial fuel cells

    Science.gov (United States)

    Khaled, Firas; Ondel, Olivier; Allard, Bruno; Buret, François

    2015-07-01

    The microbial fuel cell (MFC) converts electrochemically organic matter into electricity by means of metabolisms of bacteria. The MFC power output is limited by low voltage and low current characteristics in the range of microwatts or milliwatts per litre. In order to produce a sufficient voltage level (>1.5 V) and sufficient power to supply real applications such as autonomous sensors, it is necessary to either scale-up one single unit or to connect multiple units together. Many topologies of connection are possible as the serial association to improve the output voltage, or the parallel connection to improve the output current or the series/parallel connection to step-up both voltage and current. The association of MFCs in series is a solution to increase the voltage to an acceptable value and to mutualize the unit's output power. The serial association of a large number of MFCs presents several issues. The first one is the hydraulic coupling among MFCs when they share the same substrate. The second one is the dispersion between generators that lead to a non-optimal stack efficiency because the maximum power point (MPP) operation of all MFCs is not permitted. Voltage balancing is a solution to compensate non-uniformities towards MPP. This paper presents solutions to improve the efficiency of a stack of serially connected MFCs through a voltage-balancing circuit. Contribution to the topical issue "Electrical Engineering Symposium (SGE 2014)", edited by Adel Razek

  7. No-Voltage Meter

    Science.gov (United States)

    1976-02-01

    VW- IKft, 1/4 H4 -Wv- IK!1, I/4W INTERNAL VOLTAGE NOTE ALL TRANSISTORS ARE 2N43A OR EQUIVALENT GERMANIUM ALLOY PNP AA ALKALINE BATTERY...D-,, regardless of polarity. This signal is then full-wave rectified by the diode-connected Germanium transistor bridge, T,, T-,, T3, and T4... Transistor T5 acts as a second current limiter. Resistor R2 was selected to give 90 f# of full-scale meter deflection with an input signal of 115 volts

  8. Estimation of the spatial distribution of traps using space-charge-limited current measurements in an organic single crystal

    KAUST Repository

    Dacuña, Javier

    2012-09-06

    We used a mobility edge transport model and solved the drift-diffusion equation to characterize the space-charge-limited current of a rubrene single-crystal hole-only diode. The current-voltage characteristics suggest that current is injection-limited at high voltage when holes are injected from the bottom contact (reverse bias). In contrast, the low-voltage regime shows that the current is higher when holes are injected from the bottom contact as compared to hole injection from the top contact (forward bias), which does not exhibit injection-limited current in the measured voltage range. This behavior is attributed to an asymmetric distribution of trap states in the semiconductor, specifically, a distribution of traps located near the top contact. Accounting for a localized trap distribution near the contact allows us to reproduce the temperature-dependent current-voltage characteristics in forward and reverse bias simultaneously, i.e., with a single set of model parameters. We estimated that the local trap distribution contains 1.19×1011 cm -2 states and decays as exp(-x/32.3nm) away from the semiconductor-contact interface. The local trap distribution near one contact mainly affects injection from the same contact, hence breaking the symmetry in the charge transport. The model also provides information of the band mobility, energy barrier at the contacts, and bulk trap distribution with their corresponding confidence intervals. © 2012 American Physical Society.

  9. Benchmarking of Voltage Sag Generators

    DEFF Research Database (Denmark)

    Yang, Yongheng; Blaabjerg, Frede; Zou, Zhixiang

    2012-01-01

    The increased penetration of renewable energy systems, like photovoltaic and wind power systems, rises the concern about the power quality and stability of the utility grid. Some regulations for Low Voltage Ride-Through (LVRT) for medium voltage or high voltage applications, are coming into force...... to guide these grid-connected distributed power generation systems. In order to verify the response of such systems for voltage disturbance, mainly for evaluation of voltage sags/dips, a Voltage Sag Generator (VSG) is needed. This paper evaluates such sag test devices according to IEC 61000 in order...... to provide cheaper solutions to test against voltage sags. Simulation and experimental results demonstrate that the shunt impedance based VSG solution is the easiest and cheapest one for laboratory test applications. The back-to-back fully controlled converter based VSG is the most flexible solution...

  10. Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region

    OpenAIRE

    Zhu, Shiyang; Nakajima, Anri

    2005-01-01

    By stressing metal-oxide-semiconductor field-effect transistors with ultrathin silicon dioxide or oxynitride gate dielectrics under square wave form voltage at the MHz region, an abnormal enhancement of interface trap generation in the midchannel region has been observed at some special frequencies. A hypothesis, including self-accelerating interface trap generation originated from the positive feedback of a charge pumping current to be contributed by the stress-induced near-interface oxide t...

  11. An easily fabricated high performance ionic polymer based sensor network

    Science.gov (United States)

    Zhu, Zicai; Wang, Yanjie; Hu, Xiaopin; Sun, Xiaofei; Chang, Longfei; Lu, Pin

    2016-08-01

    Ionic polymer materials can generate an electrical potential from ion migration under an external force. For traditional ionic polymer metal composite sensors, the output voltage is very small (a few millivolts), and the fabrication process is complex and time-consuming. This letter presents an ionic polymer based network of pressure sensors which is easily and quickly constructed, and which can generate high voltage. A 3 × 3 sensor array was prepared by casting Nafion solution directly over copper wires. Under applied pressure, two different levels of voltage response were observed among the nine nodes in the array. For the group producing the higher level, peak voltages reached as high as 25 mV. Computational stress analysis revealed the physical origin of the different responses. High voltages resulting from the stress concentration and asymmetric structure can be further utilized to modify subsequent designs to improve the performance of similar sensors.

  12. Measurement of trapped magnetic fields on Ag-sheathed Bi-2223 monofilamentary tapes using scanning Hall sensor; Sosagata hall soshi wo mochiita gin sheath Bi2223 chodendo tanshin tape hyomen deno jisoku mitsudo sokutei

    Energy Technology Data Exchange (ETDEWEB)

    Kawano, K.; Ota, A. [Toyohashi University of Technology, Aichi (Japan). Faculty of Engineering

    1997-09-20

    Two-dimensional self-field distribution was measured on the surface of Ag-sheathed Bi-2223 superconducting monofilamentary tapes using a scanning Hall sensor, to obtain the current distributions within the specimens. Based on the electromagnetic consideration, path of current flow within superconducting cores under the critical condition was modeled. Magnetic field profiles were calculated in the case of strong links of grain boundaries where high critical current density (Jc) can be expected due to the intergranular current transport, and in the case of weak links of grain boundaries where high Jc can not be expected due to local intragranular current transport. When assuming the intergranular current, calculated Jc was lower than the measured one. Distribution of Jc in the superconducting cores was suggested. When the weak link was artificially introduced in the specimens, residual magnetic field changed remarkably at the ends of superconducting cores, but it did not change at the center of cores. Such behaviors of magnetic field could be explained from the results calculated by assuming the intragranular current. This was found to be caused by the presence of intergranular weak links. 15 refs., 11 figs., 2 tabs.

  13. Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J. J.; Lim, J. H.; Yang, J. W. [Chonbuk National University, Jeonju (Korea, Republic of); Stanchina, W. [University of Pittsburgh, Pittsburgh, PA (United States)

    2014-08-15

    The negative charging effect of surface traps on the gate leakage current of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The gate leakage current could be decreased by two orders of magnitude by using a photo-electrochemical process to treat of the source and the drain region, but current flowed into the gate even at a negative voltage in a limited region when the measurement was executed with a gate voltage sweep from negative to positive voltage. Also the electrical characteristics of the HEMT were degraded by pulsed operation of the gate. Traps newly generated on the surface were regarded as sources for the current that flowed against the applied voltage, and the number of traps was estimated. Also, a slow transient in the drain current was confirmed based on the results of delayed sweep measurements.

  14. Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

    DEFF Research Database (Denmark)

    Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

    2017-01-01

    This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... analysis, which is simple for computation and requires moderate automation and communication infrastructure. The proposed method is suitable for a hierarchical control structure where a supervisory controller has the provision to adapt the settings of local PV inverter controllers for overall system...

  15. Heat-pump performance: voltage dip/sag, under-voltage and over-voltage

    Directory of Open Access Journals (Sweden)

    William J.B. Heffernan

    2014-12-01

    Full Text Available Reverse cycle air-source heat-pumps are an increasingly significant load in New Zealand and in many other countries. This has raised concern over the impact wide-spread use of heat-pumps may have on the grid. The characteristics of the loads connected to the power system are changing because of heat-pumps. Their performance during under-voltage events such as voltage dips has the potential to compound the event and possibly cause voltage collapse. In this study, results from testing six heat-pumps are presented to assess their performance at various voltages and hence their impact on voltage stability.

  16. EXPERIMENTAL ANALYSIS OF THERMAL FIELD DISTRIBUTION WITHIN THE HIGH VOLTAGE COIL OF X-RAY DETECTOR WITH FLUORESCENT FIBER-OPTIC TEMPERATURE SENSOR%用荧光光纤温度传感器测试X射线探伤机高压包热场分布

    Institute of Scientific and Technical Information of China (English)

    胡红利; 张晓鹏; 徐通模; 于敏

    2001-01-01

    Thermal field distribution within the high voltage coil of type XGQ3005 X-ray detector is measured wity a multi-channel radiation fluorescent fiber-optic temperabure sensor made in our laboratory.The measured results are analyzed and discussed,which give a good reference to the reliable design and the safe use of type XGQ3005 X-ray detector.%采用一种自制的荧光辐射型多路光纤温度传感器,对XGQ3005型充气变频X射线探伤机的高压包(高压变压器绕组)中热场分布进行了测量,给出了测量结果,并进行了分析和讨论;为充气变频X射线探伤机的可靠性设计和安全使用提供了有力的依据。

  17. Design of a radiation hard silicon pixel sensor for X-ray science

    Energy Technology Data Exchange (ETDEWEB)

    Schwandt, Joern

    2014-06-15

    At DESY Hamburg the European X-ray Free-Electron Laser (EuXFEL) is presently under construction. The EuXFEL has unique properties with respect to X-ray energy, instantaneous intensity, pulse length, coherence and number of pulses/sec. These properties of the EuXFEL pose very demanding requirements for imaging detectors. One of the detector systems which is currently under development to meet these challenges is the Adaptive Gain Integrating Pixel Detector, AGIPD. It is a hybrid pixel-detector system with 1024 x 1024 p{sup +} pixels of dimensions 200 μm x 200 μm, made of 16 p{sup +}nn{sup +}- silicon sensors, each with 10.52 cm x 2.56 cm sensitive area and 500 μm thickness. The particular requirements for the AGIPD are a separation between noise and single photons down to energies of 5 keV, more than 10{sup 4} photons per pixel for a pulse duration of less than 100 fs, negligible pile-up at the EuXFEL repetition rate of 4.5 MHz, operation for X-ray doses up to 1 GGy, good efficiency for X-rays with energies between 5 and 20 keV, and minimal inactive regions at the edges. The main challenge in the sensor design is the required radiation tolerance and high operational voltage, which is required to reduce the so-called plasma effect. This requires a specially optimized sensor. The X-ray radiation damage results in a build-up of oxide charges and interface traps which lead to a reduction of the breakdown voltage, increased leakage current, increased interpixel capacitances and charge losses. Extensive TCAD simulations have been performed to understand the impact of X-ray radiation damage on the detector performance and optimize the sensor design. To take radiation damage into account in the simulation, radiation damage parameters have been determined on MOS capacitors and gate-controlled diodes as function of dose. The optimized sensor design was fabricated by SINTEF. Irradiation tests on test structures and sensors show that the sensor design is radiation hard and

  18. Atomic Coherent Trapping and Properties of Trapped Atom

    Institute of Scientific and Technical Information of China (English)

    YANG Guo-Jian; XIA Li-Xin; XIE Min

    2006-01-01

    Based on the theory of velocity-selective coherent population trapping, we investigate an atom-laser system where a pair of counterpropagating laser fields interact with a three-level atom. The influence of the parametric condition on the properties of the system such as velocity at which the atom is selected to be trapped, time needed for finishing the coherent trapping process, and possible electromagnetically induced transparency of an altrocold atomic medium,etc., is studied.

  19. Review on the Traction System Sensor Technology of a Rail Transit Train.

    Science.gov (United States)

    Feng, Jianghua; Xu, Junfeng; Liao, Wu; Liu, Yong

    2017-06-11

    The development of high-speed intelligent rail transit has increased the number of sensors applied on trains. These play an important role in train state control and monitoring. These sensors generally work in a severe environment, so the key problem for sensor data acquisition is to ensure data accuracy and reliability. In this paper, we follow the sequence of sensor signal flow, present sensor signal sensing technology, sensor data acquisition, and processing technology, as well as sensor fault diagnosis technology based on the voltage, current, speed, and temperature sensors which are commonly used in train traction systems. Finally, intelligent sensors and future research directions of rail transit train sensors are discussed.

  20. Voltage Swells Improvement in Low Voltage Network Using Dynamic Voltage Restorer

    Directory of Open Access Journals (Sweden)

    R. Omar

    2011-01-01

    Full Text Available Problem statement: Voltage disturbances are the most common power quality problem due to the increased use of a large numbers of sophisticated electronic equipment in industrial distribution system. The voltage disturbances such as voltage sags, swells, harmonics, unbalance and flickers. High quality in the power supply is needed, since failures due to such disturbances usually have a high impact on production cost. There are many different solutions to compensate voltage disturbances but the use of a DVR is considered to be the most cost effective method. The objective of this study is to propose a new topology of a DVR in order to mitigate voltage swells using a powerful power custom device namely the Dynamic Voltage Restorer (DVR. Approach: New configuration of a DVR with an improvement of a controller based on direct-quadrature-zero method has been introduced to compensate voltage swells in the network. Results: The effectiveness of the DVR with its controller were verify using Matlab/Simulinks SimPower Toolbox and then implemented using 5KVA DVR experimental setup. Simulations and experimental results demonstrate the effective dynamic performance of the proposed configuration. Conclusion: The implimentation of the proposed DVR validate the capabilities in mitigating of voltage swells effectiveness.During voltage swells, the DVR injects an appropriate voltage to maintain the load voltage at its nominal value.

  1. Nonresonance adiabatic photon trap

    CERN Document Server

    Popov, S S; Burdakov, A V; Ushkova, M Yu

    2016-01-01

    Concept of high efficiency photon storage based on adiabatic confinement between concave mirrors is presented and experimentally investigated. The approach is insensitive to typical for Fabri-Perot cells requirements on quality of accumulated radiation, tolerance of resonator elements and their stability. Experiments have been carried out with the trap, which consists from opposed concave cylindrical mirrors and conjugated with them spherical mirrors. In result, high efficiency for accumulation of radiation with large angular spread and spectrum width has been confirmed. As radiation source a commercial fiber laser has been used.

  2. Atom trap trace analysis

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Z.-T.; Bailey, K.; Chen, C.-Y.; Du, X.; Li, Y.-M.; O' Connor, T. P.; Young, L.

    2000-05-25

    A new method of ultrasensitive trace-isotope analysis has been developed based upon the technique of laser manipulation of neutral atoms. It has been used to count individual {sup 85}Kr and {sup 81}Kr atoms present in a natural krypton sample with isotopic abundances in the range of 10{sup {minus}11} and 10{sup {minus}13}, respectively. The atom counts are free of contamination from other isotopes, elements,or molecules. The method is applicable to other trace-isotopes that can be efficiently captured with a magneto-optical trap, and has a broad range of potential applications.

  3. MFTF sensor verification computer program

    Energy Technology Data Exchange (ETDEWEB)

    Chow, H.K.

    1984-11-09

    The design, requirements document and implementation of the MFE Sensor Verification System were accomplished by the Measurement Engineering Section (MES), a group which provides instrumentation for the MFTF magnet diagnostics. The sensors, installed on and around the magnets and solenoids, housed in a vacuum chamber, will supply information about the temperature, strain, pressure, liquid helium level and magnet voltage to the facility operator for evaluation. As the sensors are installed, records must be maintained as to their initial resistance values. Also, as the work progresses, monthly checks will be made to insure continued sensor health. Finally, after the MFTF-B demonstration, yearly checks will be performed as well as checks of sensors as problem develops. The software to acquire and store the data was written by Harry Chow, Computations Department. The acquired data will be transferred to the MFE data base computer system.

  4. Design of output voltage waveform on magnetic encoder

    Energy Technology Data Exchange (ETDEWEB)

    Shi Yu E-mail: shiyu_aaa@163.com; Zhang Huaiwu; Jiang Xiangdong; Wen Qiye; Han Baoshan

    2004-11-01

    A novel design model based on slant multi-phase filter (SMPF) theory is presented. By the theory nth harmonic voltage (n=2nd, 3rd and 4th...(V)) can be reduced easily. Magnetic encoder with sinusoidal output voltage waveform has been developed and sinusoidal output waveform can be easily improved. The minimum of distortion factor was observed when the difference of slant phase is 2{pi}3. This result agrees with SMPF theory value {phi}=4.904 deg. (p=0.8 mm, l=3 mm, {delta}{theta}=2{pi}3]. This result can be widely used in magnetoresistive sensor fields.

  5. Electric Voltage Control as an Implementation of Neural Network Applications

    Directory of Open Access Journals (Sweden)

    A. A. Al-Rababah

    2008-01-01

    Full Text Available Present study was proposed the monitoring of mathematical model of electric voltage source with using neural network for application in control systems as sensor and command signal. The monitoring system, consist of toroidal choke or transformer with high saturated ferromagnetic cores. The input information we receive from current periodic curves. The current was distributed into Fourier or walsh series. The combination of these harmonics and their amplitude values determine monitoring voltage value directly. For increase of this system precision, the mathematical model was constructed on basis of partial differential quasi-stationary electromagnetic field equations and ordi-nary differential electromagnetic circuit equations combination.

  6. Ambient Sensors

    NARCIS (Netherlands)

    Börner, Dirk; Specht, Marcus

    2014-01-01

    This software sketches comprise two custom-built ambient sensors, i.e. a noise and a movement sensor. Both sensors measure an ambient value and process the values to a color gradient (green > yellow > red). The sensors were built using the Processing 1.5.1 development environment. Available under th

  7. Ambient Sensors

    NARCIS (Netherlands)

    Börner, Dirk; Specht, Marcus

    2014-01-01

    This software sketches comprise two custom-built ambient sensors, i.e. a noise and a movement sensor. Both sensors measure an ambient value and process the values to a color gradient (green > yellow > red). The sensors were built using the Processing 1.5.1 development environment. Available under

  8. Nanofriction in cold ion traps.

    Science.gov (United States)

    Benassi, A; Vanossi, A; Tosatti, E

    2011-01-01

    Sliding friction between crystal lattices and the physics of cold ion traps are so far non-overlapping fields. Two sliding lattices may either stick and show static friction or slip with dynamic friction; cold ions are known to form static chains, helices or clusters, depending on the trapping conditions. Here we show, based on simulations, that much could be learnt about friction by sliding, through, for example, an electric field, the trapped ion chains over a corrugated potential. Unlike infinite chains, in which the theoretically predicted Aubry transition to free sliding may take place, trapped chains are always pinned. Yet, a properly defined static friction still vanishes Aubry-like at a symmetric-asymmetric structural transition, found for decreasing corrugation in both straight and zig-zag trapped chains. Dynamic friction is also accessible in ringdown oscillations of the ion trap. Long theorized static and dynamic one-dimensional friction phenomena could thus become accessible in future cold ion tribology.

  9. NOx Sensor Development

    Energy Technology Data Exchange (ETDEWEB)

    Woo, L Y; Glass, R S

    2010-11-01

    NO{sub x} compounds, specifically NO and NO{sub 2}, are pollutants and potent greenhouse gases. Compact and inexpensive NO{sub x} sensors are necessary in the next generation of diesel (CIDI) automobiles to meet government emission requirements and enable the more rapid introduction of more efficient, higher fuel economy CIDI vehicles. Because the need for a NO{sub x} sensor is recent and the performance requirements are extremely challenging, most are still in the development phase. Currently, there is only one type of NO{sub x} sensor that is sold commercially, and it seems unlikely to meet more stringent future emission requirements. Automotive exhaust sensor development has focused on solid-state electrochemical technology, which has proven to be robust for in-situ operation in harsh, high-temperature environments (e.g., the oxygen stoichiometric sensor). Solid-state sensors typically rely on yttria-stabilized zirconia (YSZ) as the oxygen-ion conducting electrolyte and then target different types of metal or metal-oxide electrodes to optimize the response. Electrochemical sensors can be operated in different modes, including amperometric (a current is measured) and potentiometric (a voltage is measured), both of which employ direct current (dc) measurements. Amperometric operation is costly due to the electronics necessary to measure the small sensor signal (nanoampere current at ppm NO{sub x} levels), and cannot be easily improved to meet the future technical performance requirements. Potentiometric operation has not demonstrated enough promise in meeting long-term stability requirements, where the voltage signal drift is thought to be due to aging effects associated with electrically driven changes, both morphological and compositional, in the sensor. Our approach involves impedancemetric operation, which uses alternating current (ac) measurements at a specified frequency. The approach is described in detail in previous reports and several publications

  10. Design, microfabrication, and analysis of micrometer-sized cylindrical ion trap arrays

    Science.gov (United States)

    Cruz, D.; Chang, J. P.; Fico, M.; Guymon, A. J.; Austin, D. E.; Blain, M. G.

    2007-01-01

    A description of the design and microfabrication of arrays of micrometer-scale cylindrical ion traps is offered. Electrical characterization and initial ion trapping experiments with a massively parallel array of 5μm internal radius (r0) sized cylindrical ion traps (CITs) are also described. The ion trap, materials, and design are presented and shown to be critical in achieving minimal trapping potential while maintaining minimal power consumption. The ion traps, fabricated with metal electrodes, have inner radii of 1, 2, 5, and 10μm and range from 5to24μm in height. The electrical characteristics of packaged ion trap arrays were measured with a vector network analyzer. The testing focused on trapping toluene (C7H8), mass 91, 92, or 93amu, in the 5μm sized CITs. Ions were formed via electron impact ionization and were ejected by turning off the rf voltage applied to the ring electrode; a current signal was collected at this time. Optimum ionization and trapping conditions, such as a sufficient pseudopotential well and high ionization to ion loss rate ratio (as determined by simulation), proved to be difficult to establish due to the high device capacitance and the presence of exposed dielectric material in the trapping region. However, evidence was obtained suggesting the trapping of ions in 1%-15% of the traps in the array. These first tests on micrometer-scale CITs indicated the necessary materials and device design modifications for realizing ultrasmall and low power ion traps.

  11. High-voltage thin-absorber photovoltaic device structures for efficient energy harvesting

    Science.gov (United States)

    Welser, Roger E.; Pethuraja, Gopal G.; Zeller, John W.; Sood, Ashok K.; Sablon, Kimberly A.; Dhar, Nibir K.

    2014-06-01

    Efficient photovoltaic energy harvesting requires device structures capable of absorbing a wide spectrum of incident radiation and extracting the photogenerated carriers at high voltages. In this paper, we review the impact of active layer thickness on the voltage performance of GaAs-based photovoltaic device structures. We observe that thin absorber structures can be leveraged to increase the operating voltage of energy harvesting devices. Thin absorbers in combination with advanced light trapping structures provide an exciting pathway for enhancing the performance of flexible, lightweight photovoltaic modules suitable for mobile and portable power applications.

  12. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  13. Direct trace analysis of metals and alloys in a quadrupole ion-trap mass spectrometer

    CERN Document Server

    Song, K S; Yang, M; Cha, H K; Lee, J M; Lee, G H

    1999-01-01

    An ion-trap mass spectrometer adopting a quadrupole ion-trap and laser ablation/ionization method was constructed. The developed system was tested for composition analysis of some metals (Cu, stainless), and alloys (hastalloy C, mumetal) by mass spectrometry. Samples were analyzed by using laser ablation from a sample probe tip followed by a mass analysis with the quadrupole ion-trap. The quadrupole ion-trap was modified to enable laser ablation by a XeCl excimer laser pulse that passed radially through the ring electrode. A mass scan of the produced ions was performed in the mass selective instability mode wherein trapped ions were successively detected by increasing the rf voltage through the ring electrode. Factors affecting the mass resolution, such as pressure of buffer gas and ablation laser power, are discussed.

  14. Two-dimensional ion trap lattice on a microchip for quantum simulation

    CERN Document Server

    Sterling, R C; Weidt, S; Lake, K; Srinivasan, P; Webster, S C; Kraft, M; Hensinger, W K

    2013-01-01

    Using a controllable quantum system it is possible to simulate other highly complex quantum systems efficiently overcoming an in-principle limitation of classical computing. Trapped ions constitute such a highly controllable quantum system. So far, no dedicated architectures for the simulation of two-dimensional spin lattices using trapped ions in radio-frequency ion traps have been produced, limiting the possibility of carrying out such quantum simulations on a large scale. We report the operation of a two-dimensional ion trap lattice integrated in a microchip capable of implementing quantum simulations of two-dimensional spin lattices. Our device provides a scalable microfabricated architecture for trapping such ion lattices with coupling strengths between neighbouring ions sufficient to provide a powerful platform for the implementation of quantum simulations. In order to realize this device we developed a specialist fabrication process that allows for the application of very large voltages. We fabricated ...

  15. Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability

    Science.gov (United States)

    Ji, Xiao-Li; Liao, Yi-Ming; Yan, Feng; Shi, Yi; Zhang, Guan; Guo, Qiang

    2011-10-01

    Negative bias temperature instability (NBTI) in ultrathin-plasma-nitrided-oxide (PNO) based p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) is investigated at temperatures ranging from 220K to 470K. It is found that the threshold voltage VT degradation below 290 K is dominated by the hole trapping process. Further studies unambiguously show that this process is unnecessarily related to nitrogen but the incorporation of nitrogen in the gate dielectric increases the probability of hole trapping in the NBTI process as it introduces extra trap states located in the upper half of the Si band gap. The possible hole trapping mechanism in NBTI stressed PNO pMOSFETs is suggested by taking account of oxygen and nitrogen related trap centers.

  16. A probe station for testing silicon sensors

    CERN Multimedia

    Caraban Gonzalez, Noemi

    2017-01-01

    A probe station for testing silicon sensors. The probe station is located inside a dark box that can keep away light during the measurement. The set-up is located in the DSF (Department Silicon Facility). The golden plate is the "chuck" where the sensor is usually placed on. With the help of "manipulators", thin needles can be precisely positioned that can contact the sensor surface. Using these needles and the golden chuck, a high voltage can be applied to the sensor to test its behaviour under high voltage. We will use the silicon sensors that we test here for building prototypes of a highly granular sandwich calorimeter, the CMS HGC (Highly granular Calorimeter) upgrade for High-Luminosity LHC.

  17. A probe station for testing silicon sensors

    CERN Multimedia

    Ulysse, Fichet

    2017-01-01

    A probe station for testing silicon sensors. The probe station is located inside a dark box that can keep away light during the measurement. The set-up is located in the DSF (Department Silicon Facility). The golden plate is the "chuck" where the sensor is usually placed on. With the help of "manipulators", thin needles can be precisely positioned that can contact the sensor surface. Using these needles and the golden chuck, a high voltage can be applied to the sensor to test its behaviour under high voltage. We will use the silicon sensors that we test here for building prototypes of a highly granular sandwich calorimeter, the CMS HGC (Highly granular Calorimeter) upgrade for High-Luminosity LHC.

  18. PENTATRAP. A novel Penning-trap system for high-precision mass measurements

    Energy Technology Data Exchange (ETDEWEB)

    Doerr, Andreas

    2015-01-21

    The novel Penning-trap mass spectrometer PENTATRAP aims at mass-ratio determinations of medium-heavy to heavy ions with relative uncertainties below 10{sup -11}. From the mass ratios of certain ion species, the corresponding mass differences will be determined with sub-eV/c{sup 2} uncertainties. These mass differences are relevant for neutrino-mass experiments, a test of special relativity and tests of bound-state QED. Means to obtain the required precision are very stable trapping fields, the use of highly-charged ions produced by EBITs, a non-destructive cyclotron-frequency determination scheme employing detectors with single-ion sensitivity and a five-trap tower, that allows for measurement schemes being insensitive to magnetic field drifts. Within this thesis, part of the detection electronics was set up and tested under experimental conditions. A single-trap setup was realized. A Faraday cup in the trap tower enabled the proper adjustment of the settings of the beamline connecting the EBIT and the Penning-trap system, resulting in the first trapping of ions at PENTATRAP. A stabilization of switched voltages in the beamline and detailed studies of ion bunch characteristics allowed for reproducible loading of only a few ions. Detection of the axial oscillation of the trapped ions gave hints that in some cases, even single ions had been trapped. Furthermore, valuable conclusions about necessary modifications of the setup could be drawn.

  19. The control mechanism of surface traps on surface charge behavior in alumina-filled epoxy composites

    Science.gov (United States)

    Li, Chuanyang; Hu, Jun; Lin, Chuanjie; He, Jinliang

    2016-11-01

    To investigate the role surface traps play in the charge injection and transfer behavior of alumina-filled epoxy composites, surface traps with different trap levels are introduced by different surface modification methods which include dielectric barrier discharges plasma, direct fluorination, and Cr2O3 coating. The resulting surface physicochemical characteristics of experimental samples were observed using atomic force microscopy, scanning electron microscopy and fourier transform infrared spectroscopy. The surface potential under dc voltage was detected and the trap level distribution was measured. The results suggest that the surface morphology of the experimental samples differs dramatically after treatment with different surface modification methods. Different surface trap distributions directly determine the charge injection and transfer property along the surface. Shallow traps with trap level of 1.03–1.11 eV and 1.06–1.13 eV introduced by plasma and fluorination modifications are conducive for charge transport along the insulating surface, and the surface potential can be modified, producing a smoother potential curve. The Cr2O3 coating can introduce a large number of deep traps with energy levels ranging from 1.09 to 1.15 eV. These can prevent charge injection through the reversed electric field formed by intensive trapped charges in the Cr2O3 coatings.

  20. Voltage-gated proton channel is expressed on phagosomes.

    Science.gov (United States)

    Okochi, Yoshifumi; Sasaki, Mari; Iwasaki, Hirohide; Okamura, Yasushi

    2009-05-01

    Voltage-gated proton channel has been suggested to help NADPH oxidase activity during respiratory burst of phagocytes through its activities of compensating charge imbalance and regulation of pH. In phagocytes, robust production of reactive oxygen species occurs in closed membrane compartments, which are called phagosomes. However, direct evidence for the presence of voltage-gated proton channels in phagosome has been lacking. In this study, the expression of voltage-gated proton channels was studied by Western blot with the antibody specific to the voltage-sensor domain protein, VSOP/Hv1, that has recently been identified as the molecular correlate for the voltage-gated proton channel. Phagosomal membranes of neutrophils contain VSOP/Hv1 in accordance with subunits of NADPH oxidases, gp91, p22, p47 and p67. Superoxide anion production upon PMA activation was significantly reduced in neutrophils from VSOP/Hv1 knockout mice. These are consistent with the idea that voltage-gated proton channels help NADPH oxidase in phagocytes to produce reactive oxygen species.

  1. Manipulating Neutral Atoms in Chip-Based Magnetic Traps

    Science.gov (United States)

    Aveline, David; Thompson, Robert; Lundblad, Nathan; Maleki, Lute; Yu, Nan; Kohel, James

    2009-01-01

    Several techniques for manipulating neutral atoms (more precisely, ultracold clouds of neutral atoms) in chip-based magnetic traps and atomic waveguides have been demonstrated. Such traps and waveguides are promising components of future quantum sensors that would offer sensitivities much greater than those of conventional sensors. Potential applications include gyroscopy and basic research in physical phenomena that involve gravitational and/or electromagnetic fields. The developed techniques make it possible to control atoms with greater versatility and dexterity than were previously possible and, hence, can be expected to contribute to the value of chip-based magnetic traps and atomic waveguides. The basic principle of these techniques is to control gradient magnetic fields with suitable timing so as to alter a trap to exert position-, velocity-, and/or time-dependent forces on atoms in the trap to obtain desired effects. The trap magnetic fields are generated by controlled electric currents flowing in both macroscopic off-chip electromagnet coils and microscopic wires on the surface of the chip. The methods are best explained in terms of examples. Rather than simply allowing atoms to expand freely into an atomic waveguide, one can give them a controllable push by switching on an externally generated or a chip-based gradient magnetic field. This push can increase the speed of the atoms, typically from about 5 to about 20 cm/s. Applying a non-linear magnetic-field gradient exerts different forces on atoms in different positions a phenomenon that one can exploit by introducing a delay between releasing atoms into the waveguide and turning on the magnetic field.

  2. The Honey Trap

    DEFF Research Database (Denmark)

    Wagner, Michael

    Michael F. Wagner: The Honey Trap –The democratization of leisure through automobilism The automobile has achieved a central position in modern everyday life as an essential artefact to mobility. This raises the question how automobiles have been mediated for mass consumption? The central thesis...... in the article is that the culture of Danish automobilism was constructed around and appropriated through leisure activities conducted primarily by the automobile consumer’s organisation Touring Club de Danemark (FDM). The general purpose for the consumer organisation has been to create a cultural identity...... and a material reality of democratic participation linking ‘Car and Leisure’, a term that has been a central motto for the organization during many decades. The keyword in this activity was ‘Free’ celebrating the manner in which the privately owned automobile secured a maximum of freedom to the owner. The paper...

  3. Recombination in Perovskite Solar Cells: Significance of Grain Boundaries, Interface Traps, and Defect Ions

    Science.gov (United States)

    2017-01-01

    Trap-assisted recombination, despite being lower as compared with traditional inorganic solar cells, is still the dominant recombination mechanism in perovskite solar cells (PSCs) and limits their efficiency. We investigate the attributes of the primary trap-assisted recombination channels (grain boundaries and interfaces) and their correlation to defect ions in PSCs. We achieve this by using a validated device model to fit the simulations to the experimental data of efficient vacuum-deposited p–i–n and n–i–p CH3NH3PbI3 solar cells, including the light intensity dependence of the open-circuit voltage and fill factor. We find that, despite the presence of traps at interfaces and grain boundaries (GBs), their neutral (when filled with photogenerated charges) disposition along with the long-lived nature of holes leads to the high performance of PSCs. The sign of the traps (when filled) is of little importance in efficient solar cells with compact morphologies (fused GBs, low trap density). On the other hand, solar cells with noncompact morphologies (open GBs, high trap density) are sensitive to the sign of the traps and hence to the cell preparation methods. Even in the presence of traps at GBs, trap-assisted recombination at interfaces (between the transport layers and the perovskite) is the dominant loss mechanism. We find a direct correlation between the density of traps, the density of mobile ionic defects, and the degree of hysteresis observed in the current–voltage (J–V) characteristics. The presence of defect states or mobile ions not only limits the device performance but also plays a role in the J–V hysteresis. PMID:28540366

  4. A New Method to Measure Trap Characteristics of Silicon Solar Cells

    Institute of Scientific and Technical Information of China (English)

    MA Xun; LIU Zu-Ming; QU Sheng; WANG Shu-Rong; HAO Rui-Ting; LIAO Hua

    2011-01-01

    @@ A new method to measure trap characteristics in crystalline silicon solar cells is presented.Important parameters of traps including energy level, total concentration of trapping centers and capture cross-section ratio of hole to electron are deduced using the Shockley-Read-Hall theory of crystalline silicon solar cells in base region.Based on the as-deduced model, these important parameters of traps are determined by measuring open-circuit voltages of silicon solar cells under monochromatic illumination in the wavelength range 500-1050 nm with and without bias light.The effects of wavelength and intensity of bias light on the measurement results are also discussed.The measurement system used in our experiments is very similar to a quantum efficiency test system which is commercially available.Therefore, our method is very convenient and valuable for detecting deep level traps in crystalline silicon solar cells.%A new method to measure trap characteristics in crystalline silicon solar cells is presented. Important parameters of traps including energy level, total concentration of trapping centers and capture cross-section ratio of hole to electron are deduced using the Shockley-Read-Hall theory of crystalline silicon solar cells in base region. Based on the as-deduced model, these important parameters of traps are determined by measuring open-circuit voltages of silicon solar cells under monochromatic illumination in the wavelength range 500-1050nm with and without bias light. The effects of wavelength and intensity of bias light on the measurement results are also discussed. The measurement system used in our experiments is very similar to a quantum efficiency test system which is commercially available. Therefore, our method is very convenient and valuable for detecting deep level traps in crystalline silicon solar cells.

  5. Capacitance-voltage characteristics of GaAs ion-implanted structures

    Directory of Open Access Journals (Sweden)

    Privalov E. N.

    2008-08-01

    Full Text Available A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these structures which are due to the presence of deep traps are elucidated.

  6. The Voltage Boost Enabled by Luminescence Extraction in Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Ganapati, Vidya; Steiner, Myles A.; Yablonovitch, Eli

    2016-11-21

    A new physical principle has emerged to produce record voltages and efficiencies in photovoltaic cells, 'luminescence extraction.' This is exemplified by the mantra 'a good solar cell should also be a good LED.' Luminescence extraction is the escape of internal photons out of the front surface of a solar cell. Basic thermodynamics says that the voltage boost should be related to concentration ratio, C, of a resource by ..delta..V=(kT/q)ln{C}. In light trapping, (i.e. when the solar cell is textured and has a perfect back mirror) the concentration ratio of photons C={4n2}, so one would expect a voltage boost of ..delta..V=kT ln{4n2} over a solar cell with no texture and zero back reflectivity, where n is the refractive index. Nevertheless, there has been ambiguity over the voltage benefit to be expected from perfect luminescence extraction. Do we gain an open circuit voltage boost of ..delta..V=(kT/q)ln{n2}, ..delta..V=(kT/q)ln{2n2}, or ..delta..V=(kT/q)ln{4n2}? What is responsible for this voltage ambiguity ..delta..V=(kT/q)ln{4}=36mVolts? We show that different results come about, depending on whether the photovoltaic cell is optically thin or thick to its internal luminescence. In realistic intermediate cases of optical thickness the voltage boost falls in between; ln{n2}q..delta..V/kT)<;ln{4n2}.

  7. A Sentinel Sensor Network for Hydrogen Sensing

    Directory of Open Access Journals (Sweden)

    Andrew J. Mason

    2003-02-01

    Full Text Available A wireless sensor network is presented for in-situ monitoring of atmospheric hydrogen concentration. The hydrogen sensor network consists of multiple sensor nodes, equipped with titania nanotube hydrogen sensors, distributed throughout the area of interest; each node is both sensor, and data-relay station that enables extended wide area monitoring without a consequent increase of node power and thus node size. The hydrogen sensor is fabricated from a sheet of highly ordered titania nanotubes, made by anodization of a titanium thick film, to which platinum electrodes are connected. The electrical resistance of the hydrogen sensor varies from 245 Ω at 500 ppm hydrogen, to 10.23 kΩ at 0 ppm hydrogen (pure nitrogen environment. The measured resistance is converted to voltage, 0.049 V at 500 ppm to 2.046 V at 0 ppm, by interface circuitry. The microcontroller of the sensor node digitizes the voltage and transmits the digital information, using intermediate nodes as relays, to a host node that downloads measurement data to a computer for display. This paper describes the design and operation of the sensor network, the titania nanotube hydrogen sensors with an apparent low level resolution of approximately 0.05 ppm, and their integration in one widely useful device.

  8. Analysis of bias voltage scan data recorded with hybrid Timepix1 silicon pixel assemblies at the DESY testbeam

    CERN Document Server

    Maimon, Shir

    2014-01-01

    This report will present results from the analysis of bias voltage scans in Timepix1 testbeam data. Three assemblies of varying sensor thickness were used to collect data. The effect of the bias voltage on charge sharing, in particular cluster size, was investigated and found to have a significant impact. The effect of the bias voltage on energy collection was also studied, leading to estimates for the depletion voltage, donor concentration, mobility and resistivity of each assembly. Finally, the effect of the bias voltage on the two-hit cluster resolution and detection efficiency was investigated. This report contains extracts from a longer document (LCD-OPEN-2014-001).

  9. Quantum computing with trapped ions

    Energy Technology Data Exchange (ETDEWEB)

    Hughes, R.J.

    1998-01-01

    The significance of quantum computation for cryptography is discussed. Following a brief survey of the requirements for quantum computational hardware, an overview of the ion trap quantum computation project at Los Alamos is presented. The physical limitations to quantum computation with trapped ions are analyzed and an assessment of the computational potential of the technology is made.

  10. The ALPHA antihydrogen trapping apparatus

    Science.gov (United States)

    Amole, C.; Andresen, G. B.; Ashkezari, M. D.; Baquero-Ruiz, M.; Bertsche, W.; Bowe, P. D.; Butler, E.; Capra, A.; Carpenter, P. T.; Cesar, C. L.; Chapman, S.; Charlton, M.; Deller, A.; Eriksson, S.; Escallier, J.; Fajans, J.; Friesen, T.; Fujiwara, M. C.; Gill, D. R.; Gutierrez, A.; Hangst, J. S.; Hardy, W. N.; Hayano, R. S.; Hayden, M. E.; Humphries, A. J.; Hurt, J. L.; Hydomako, R.; Isaac, C. A.; Jenkins, M. J.; Jonsell, S.; Jørgensen, L. V.; Kerrigan, S. J.; Kurchaninov, L.; Madsen, N.; Marone, A.; McKenna, J. T. K.; Menary, S.; Nolan, P.; Olchanski, K.; Olin, A.; Parker, B.; Povilus, A.; Pusa, P.; Robicheaux, F.; Sarid, E.; Seddon, D.; Seif El Nasr, S.; Silveira, D. M.; So, C.; Storey, J. W.; Thompson, R. I.; Thornhill, J.; Wells, D.; van der Werf, D. P.; Wurtele, J. S.; Yamazaki, Y.

    2014-01-01

    The ALPHA collaboration, based at CERN, has recently succeeded in confining cold antihydrogen atoms in a magnetic minimum neutral atom trap and has performed the first study of a resonant transition of the anti-atoms. The ALPHA apparatus will be described herein, with emphasis on the structural aspects, diagnostic methods and techniques that have enabled antihydrogen trapping and experimentation to be achieved.

  11. Cryogenic silicon surface ion trap

    CERN Document Server

    Niedermayr, Michael; Kumph, Muir; Partel, Stefan; Edlinger, Johannes; Brownnutt, Michael; Blatt, Rainer

    2014-01-01

    Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations. However, to realise the full potential of such systems and make scalable trapped-ion quantum computing a reality, there exist a number of practical problems which must be solved. These include tackling the observed high ion-heating rates and creating scalable trap structures which can be simply and reliably produced. Here, we report on cryogenically operated silicon ion traps which can be rapidly and easily fabricated using standard semiconductor technologies. Single $^{40}$Ca$^+$ ions have been trapped and used to characterize the trap operation. Long ion lifetimes were observed with the traps exhibiting heating rates as low as $\\dot{\\bar{n}}=$ 0.33 phonons/s at an ion-electrode distance of 230 $\\mu$m. These results open many new avenues to arrays of micro-fabricated ion traps.

  12. Accretion discs trapped near corotation

    NARCIS (Netherlands)

    D'Angelo, C.R.; Spruit, H.C.

    2012-01-01

    We show that discs accreting on to the magnetosphere of a rotating star can end up in a trapped state, in which the inner edge of the disc stays near the corotation radius, even at low and varying accretion rates. The accretion in these trapped states can be steady or cyclic; we explore these states

  13. The ALPHA antihydrogen trapping apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Amole, C. [Department of Physics and Astronomy, York University, Toronto ON Canada, M3J 1P3 (Canada); Andresen, G.B. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Ashkezari, M.D. [Department of Physics, Simon Fraser University, Burnaby, BC Canada, V5A 1S6 (Canada); Baquero-Ruiz, M. [Department of Physics, University of California at Berkeley, Berkeley, CA 94720-7300 (United States); Bertsche, W. [Department of Physics, College of Science, Swansea University, Swansea SA2 8PP (United Kingdom); School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom); The Cockcroft Institute, Warrington WA4 4AD (United Kingdom); Bowe, P.D. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Butler, E. [Physics Department, CERN, CH-1211 Geneva 23 (Switzerland); Capra, A. [Department of Physics and Astronomy, York University, Toronto ON Canada, M3J 1P3 (Canada); Carpenter, P.T. [Department of Physics, Auburn University, Auburn, AL 36849-5311 (United States); Cesar, C.L. [Instituto de Física, Universidade Federal do Rio de Janeiro, Rio de Janeiro 21941-972 (Brazil); Chapman, S. [Department of Physics, University of California at Berkeley, Berkeley, CA 94720-7300 (United States); Charlton, M.; Deller, A.; Eriksson, S. [Department of Physics, College of Science, Swansea University, Swansea SA2 8PP (United Kingdom); Escallier, J. [Brookhaven National Laboratory, Upton, NY 11973 (United States); Fajans, J. [Department of Physics, University of California at Berkeley, Berkeley, CA 94720-7300 (United States); Friesen, T. [Department of Physics and Astronomy, University of Calgary, Calgary AB, Canada, T2N 1N4 (Canada); Fujiwara, M.C.; Gill, D.R. [TRIUMF, 4004 Wesbrook Mall, Vancouver BC, Canada V6T 2A3 (Canada); Gutierrez, A. [Department of Physics and Astronomy, University of British Columbia, Vancouver BC, Canada V6T 1Z4 (Canada); and others

    2014-01-21

    The ALPHA collaboration, based at CERN, has recently succeeded in confining cold antihydrogen atoms in a magnetic minimum neutral atom trap and has performed the first study of a resonant transition of the anti-atoms. The ALPHA apparatus will be described herein, with emphasis on the structural aspects, diagnostic methods and techniques that have enabled antihydrogen trapping and experimentation to be achieved.

  14. Precise and low-cost monitoring of plum curculio (Coleoptera: Curculionidae) pest activity in pyramid traps with cameras.

    Science.gov (United States)

    Selby, R D; Gage, S H; Whalon, M E

    2014-04-01

    Incorporating camera systems into insect traps potentially benefits insect phenology modeling, nonlethal insect monitoring, and research into the automated identification of traps counts. Cameras originally for monitoring mammals were instead adapted to monitor the entrance to pyramid traps designed to capture the plum curculio, Conotrachelus nenuphar (Herbst) (Coleoptera: Curculionidae). Using released curculios, two new trap designs (v.I and v.II) were field-tested alongside conventional pyramid traps at one site in autumn 2010 and at four sites in autumn 2012. The traps were evaluated on the basis of battery power, ease-of-maintenance, adaptability, required-user-skills, cost (including labor), and accuracy-of-results. The v.II design fully surpassed expectations, except that some trapped curculios were not photographed. In 2012, 13 of the 24 traps recorded every curculio entering the traps during the 18-d study period, and in traps where some curculios were not photographed, over 90% of the omissions could be explained by component failure or external interference with the motion sensor. Significantly more curculios entered the camera traps between 1800 and 0000 hours. When compared with conventional pyramid traps, the v.I traps collected a similar number of curculios. Two observed but not significant trends were that the v.I traps collected twice as many plum curculios as the v.II traps, while at the same time the v.II traps collected more than twice as many photos per plum curculio as the v.I traps. The research demonstrates that low-cost, precise monitoring of field insect populations is feasible without requiring extensive technical expertise.

  15. Photo-reactive charge trapping memory based on lanthanide complex.

    Science.gov (United States)

    Zhuang, Jiaqing; Lo, Wai-Sum; Zhou, Li; Sun, Qi-Jun; Chan, Chi-Fai; Zhou, Ye; Han, Su-Ting; Yan, Yan; Wong, Wing-Tak; Wong, Ka-Leung; Roy, V A L

    2015-10-09

    Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)3ppta (Eu(tta)3 = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 10(4) s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

  16. Programmable differential capacitance-to-voltage converter for MEMS accelerometers

    Science.gov (United States)

    Royo, G.; Sánchez-Azqueta, C.; Gimeno, C.; Aldea, C.; Celma, S.

    2017-05-01

    Capacitive MEMS sensors exhibit an excellent noise performance, high sensitivity and low power consumption. They offer a huge range of applications, being the accelerometer one of its main uses. In this work, we present the design of a capacitance-to-voltage converter in CMOS technology to measure the acceleration from the capacitance variations. It is based on a low-power, fully-differential transimpedance amplifier with low input impedance and a very low input noise.

  17. Power conditioning for low-voltage piezoelectric stack energy harvesters

    Science.gov (United States)

    Skow, E.; Leadenham, S.; Cunefare, K. A.; Erturk, A.

    2016-04-01

    Low-power vibration and acoustic energy harvesting scenarios typically require a storage component to be charged to enable wireless sensor networks, which necessitates power conditioning of the AC output. Piezoelectric beam-type bending mode energy harvesters or other devices that operate using a piezoelectric element at resonance produce high voltage levels, for which AC-DC converters and step-down DC-DC converters have been previously investigated. However, for piezoelectric stack energy harvesters operating off-resonance and producing low voltage outputs, a step-up circuit is required for power conditioning, such as seen in electromagnetic vibration energy scavengers, RF communications, and MEMS harvesters. This paper theoretically and experimentally investigates power conditioning of a low-voltage piezoelectric stack energy harvester.

  18. A microwave powered sensor assembly for microwave ovens

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to a microwave powered sensor assembly for micro- wave ovens. The microwave powered sensor assembly comprises a microwave antenna for generating an RF antenna signal in response to microwave radiation at a predetermined excitation frequency. A dc power supply circuit...... of the microwave powered sensor assembly is operatively coupled to the RF antenna signal for extracting energy from the RF antenna signal and produce a power supply voltage. A sensor is connected to the power supply voltage and configured to measure a physical or chemical property of a food item under heating...

  19. Trapping effects and acoustoelectric current saturation in ZnO single crystals

    DEFF Research Database (Denmark)

    Mosekilde, Erik

    1970-01-01

    Measurements of current-voltage characteristics for ZnO single crystals at temperatures between 77 and 640 °K are reported. Because of the buildup of an intense acoustic flux, a strong current saturation sets in when the trap-controlled electron drift velocity is equal to the velocity of sound...

  20. Temperature and voltage coupling to channel opening in transient receptor potential melastatin 8 (TRPM8).

    Science.gov (United States)

    Raddatz, Natalia; Castillo, Juan P; Gonzalez, Carlos; Alvarez, Osvaldo; Latorre, Ramon

    2014-12-19

    Expressed in somatosensory neurons of the dorsal root and trigeminal ganglion, the transient receptor potential melastatin 8 (TRPM8) channel is a Ca(2+)-permeable cation channel activated by cold, voltage, phosphatidylinositol 4,5-bisphosphate, and menthol. Although TRPM8 channel gating has been characterized at the single channel and macroscopic current levels, there is currently no consensus regarding the extent to which temperature and voltage sensors couple to the conduction gate. In this study, we extended the range of voltages where TRPM8-induced ionic currents were measured and made careful measurements of the maximum open probability the channel can attain at different temperatures by means of fluctuation analysis. The first direct measurements of TRPM8 channel temperature-driven conformational rearrangements provided here suggest that temperature alone is able to open the channel and that the opening reaction is voltage-independent. Voltage is a partial activator of TRPM8 channels, because absolute open probability values measured with fully activated voltage sensors are less than 1, and they decrease as temperature rises. By unveiling the fast temperature-dependent deactivation process, we show that TRPM8 channel deactivation is well described by a double exponential time course. The fast and slow deactivation processes are temperature-dependent with enthalpy changes of 27.2 and 30.8 kcal mol(-1). The overall Q10 for the closing reaction is about 33. A three-tiered allosteric model containing four voltage sensors and four temperature sensors can account for the complex deactivation kinetics and coupling between voltage and temperature sensor activation and channel opening.

  1. Shaping of nested potentials for electron cooling of highly-charged ions in a cooler Penning trap

    Science.gov (United States)

    Paul, Stefan; Kootte, Brian; Lascar, Daniel; Gwinner, Gerald; Dilling, Jens; Titan Collaboration

    2016-09-01

    TRIUMF's Ion Trap for Atomic and Nuclear science (TITAN) is dedicated to mass spectrometry and decay spectroscopy of short-lived radioactive nuclides in a series of ion traps including a precision Penning trap. In order to boost the achievable precision of mass measurements TITAN deploys an Electron Beam Ion Trap (EBIT) providing Highly-Charged Ions (HCI). However, the charge breeding process in the EBIT leads to an increase in the ion bunch's energy spread which is detrimental to the overall precision gain. To reduce this effect a new cylindrical Cooler PEnning Trap (CPET) is being commissioned to sympathetically cool the HCI via a simultaneously trapped electron plasma. Simultaneous trapping of ions and electrons requires a high level of control over the nested potential landscape and sophisticated switching schemes for the voltages on CPET's multiple ring electrodes. For this purpose, we are currently setting up a new experimental control system for multi-channel voltage switching. The control system employs a Raspberry Pi communicating with a digital-to-analog board via a serial peripheral interface. We report on the implementation of the voltage control system and its performance with respect to electron and ion manipulation in CPET. University of British Columbia, Vancouver, BC, Canada.

  2. A simple method for estimating the effective detection distance of camera traps

    OpenAIRE

    Hofmeester, T.; Rowcliffe, M.; Jansen, P. A. J.

    2016-01-01

    Estimates of animal abundance are essential for understanding animal ecology. Camera traps can be used to estimate the abundance of terrestrial mammals, including elusive species, provided that the sensitivity of the sensor, estimated as the effective detection distance (EDD), is quantified. Here, we show how the EDD can be inferred directly from camera trap images by placing markers at known distances along the midline of the camera field of view, and then fitting distance-sampling functions...

  3. 1986-87 Annual Trapping Plan

    Data.gov (United States)

    US Fish and Wildlife Service, Department of the Interior — This Annual Trapping Plan for the 1986-87 trapping season at Clarence Cannon NWR outlines rules and regulations for the trapping of beaver, muskrat, raccoon,...

  4. Multipurpose Electric Potential Sensor for Spacecraft Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal is based on a new, compact, solid-state electric potential sensor that has over an order of magnitude lower voltage noise than the prior...

  5. Metamaterial Sensors

    Directory of Open Access Journals (Sweden)

    Jing Jing Yang

    2013-01-01

    Full Text Available Metamaterials have attracted a great deal of attention due to their intriguing properties, as well as the large potential applications for designing functional devices. In this paper, we review the current status of metamaterial sensors, with an emphasis on the evanescent wave amplification and the accompanying local field enhancement characteristics. Examples of the sensors are given to illustrate the principle and the performance of the metamaterial sensor. The paper concludes with an optimistic outlook regarding the future of metamaterial sensor.

  6. Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer

    Directory of Open Access Journals (Sweden)

    Keanchuan Lee

    2012-06-01

    Full Text Available A silver nanoparticles self-assembled monolayer (SAM was incorporated in pentacene field-effect transistor and its effects on the carrier injection and transport were investigated using the current-voltage (I − V and impedance spectroscopy (IS measurements. The I − V results showed that there was a significant negative shift of the threshold voltage, indicating the hole trapping inside the devices with about two orders higher in the contact resistance and an order lower in the effective mobility when a SAM was introduced. The IS measurements with the simulation using a Maxwell-Wagner equivalent circuit model revealed the existence of multiple trapping states for the devices with NPs, while the devices without NPs exhibited only a single trap state.

  7. Deep trap levels in CdS solar cells observed by capacitance measurements

    Science.gov (United States)

    Hmurcik, L.; Ketelsen, L.; Serway, R. A.

    1982-05-01

    Capacitance measurements have been carried out as a function of reverse bias voltage and signal frequency on thin-film and single-crystal CdS solar cells. It is shown that such measurements can reveal abrupt changes in C-V plots which are attributed to the presence of deep trapping states. The anomalous change in capacitance occurs when the bias voltage raises a trapping state above the Fermi level; the strength of the anomalies depends on several factors including temperature, signal frequency, and junction properties. Measurements taken on the CdS cells indicate that at least two deep trapping states are present in the partially formed i layer of CdS, which is consistent with results reported by other workers.

  8. Attention Sensor

    NARCIS (Netherlands)

    Börner, Dirk; Kalz, Marco; Specht, Marcus

    2014-01-01

    This software sketch was used in the context of an experiment for the PhD project “Ambient Learning Displays”. The sketch comprises a custom-built attention sensor. The sensor measured (during the experiment) whether a participant looked at and thus attended a public display. The sensor was built us

  9. Attention Sensor

    NARCIS (Netherlands)

    Börner, Dirk; Kalz, Marco; Specht, Marcus

    2014-01-01

    This software sketch was used in the context of an experiment for the PhD project “Ambient Learning Displays”. The sketch comprises a custom-built attention sensor. The sensor measured (during the experiment) whether a participant looked at and thus attended a public display. The sensor was built us

  10. Charge trapping and carrier transport mechanism in silicon-rich silicon oxynitride

    Energy Technology Data Exchange (ETDEWEB)

    Yu Zhenrui [Department of Electronics, INAOE, Apdo. 51, Puebla, Pue. 72000 (Mexico)]. E-mail: yinaoep@yahoo.mx; Aceves, Mariano [Department of Electronics, INAOE, Apdo. 51, Puebla, Pue. 72000 (Mexico); Carrillo, Jesus [CIDS, BUAP, Puebla, Pue. (Mexico); Lopez-Estopier, Rosa [Department of Electronics, INAOE, Apdo. 51, Puebla, Pue. 72000 (Mexico)

    2006-12-05

    The charge-trapping and carrier transport properties of silicon-rich silicon oxynitride (SRO:N) were studied. The SRO:N films were deposited by low pressure chemical vapor deposition. Infrared (IR) and transmission electron microscopic (TEM) measurements were performed to characterize their structural properties. Capacitance versus voltage and current versus voltage measurements (I-V) were used to study the charge-trapping and carrier transport mechanism. IR and TEM measurements revealed the existence of Si nanodots in SRO:N films. I-V measurements revealed that there are two conduction regimes divided by a threshold voltage V {sub T}. When the applied voltage is smaller than V {sub T}, the current is dominated by the charge transfer between the SRO:N and substrate; and in this regime only dynamic charging/discharging of the SRO:N layer is observed. When the voltage is larger than V {sub T}, the current increases rapidly and is dominated by the Poole-Frenkel mechanism; and in this regime, large permanent trapped charge density is obtained. Nitrogen incorporation significantly reduced the silicon nanodots or defects near the SRO:N/Si interface. However, a significant increase of the density of silicon nanodot in the bulk of the SRO:N layer is obtained.

  11. First Attempts at Antihydrogen Trapping in ALPHA

    Science.gov (United States)

    Andresen, G. B.; Bertsche, W.; Bowe, P. D.; Bray, C. C.; Butler, E.; Cesar, C. L.; Chapman, S.; Charlton, M.; Fajans, J.; Fujiwara, M. C.; Funakoshi, R.; Gill, D. R.; Hangst, J. S.; Hardy, W. N.; Hayano, R. S.; Hayden, M. E.; Humphries, A. J.; Hydomako, R.; Jenkins, M. J.; Jørgensen, L. V.; Kurchaninov, L.; Lambo, R.; Madsen, N.; Nolan, P.; Olchanski, K.; Olin, A.; Page, R. D.; Povilus, A.; Pusa, P.; Robicheaux, F.; Sarid, E.; El Nasr, S. Seif; Silveira, D. M.; Storey, J. W.; Thompson, R. I.; van der Werf, D. P.; Wurtele, J. S.; Yamazaki, Y.

    2008-08-01

    The ALPHA apparatus is designed to produce and trap antihydrogen atoms. The device comprises a multifunction Penning trap and a superconducting, neutral atom trap having a minimum-B configuration. The atom trap features an octupole magnet for transverse confinement and solenoidal mirror coils for longitudinal confinement. The magnetic trap employs a fast shutdown system to maximize the probability of detecting the annihilation of released antihydrogen. In this article we describe the first attempts to observe antihydrogen trapping.

  12. Feedback traps for virtual potentials

    CERN Document Server

    Gavrilov, Momčilo

    2016-01-01

    Feedback traps are tools for trapping and manipulating single charged objects, such as molecules in solution. An alternative to optical tweezers and other single-molecule techniques, they use feedback to counteract the Brownian motion of a molecule of interest. The trap first acquires information about a molecule's position and then applies an electric feedback force to move the molecule. Since electric forces are stronger than optical forces at small scales, feedback traps are the best way to trap single molecules without "touching" them. Feedback traps can do more than trap molecules: They can also subject a target object to forces that are calculated to be the gradient of a desired potential function U(x). If the feedback loop is fast enough, it creates a virtual potential whose dynamics will be very close to those of a particle in an actual potential U(x). But because the dynamics are entirely a result of the feedback loop--absent the feedback, there is only an object diffusing in a fluid--we are free to ...

  13. Color Regeneration from Reflective Color Sensor Using an Artificial Intelligent Technique

    Directory of Open Access Journals (Sweden)

    Hayriye Altural

    2010-09-01

    Full Text Available A low-cost optical sensor based on reflective color sensing is presented. Artificial neural network models are used to improve the color regeneration from the sensor signals. Analog voltages of the sensor are successfully converted to RGB colors. The artificial intelligent models presented in this work enable color regeneration from analog outputs of the color sensor. Besides, inverse modeling supported by an intelligent technique enables the sensor probe for use of a colorimetric sensor that relates color changes to analog voltages.

  14. A comprehensive analysis and hardware implementation of control strategies for high output voltage DC-DC boost power converter

    DEFF Research Database (Denmark)

    Padmanaban, Sanjeevikumar; Grandi, Gabriele; Blaabjerg, Frede

    2017-01-01

    Classical DC-DC converters used in high voltage direct current (HVDC) power transmission systems, lack in terms of efficiency, reduced transfer gain and increased cost with sensor (voltage/current) numbers. Besides, the internal self-parasitic behavior of the power components reduces the output v...

  15. Step voltage transient currents in poly(vinylidene fluoride)

    Science.gov (United States)

    Kaura, T.; Nath, Rabinder

    1983-10-01

    The step voltage current transient characteristics have been studied in poly(vinylidene flouride) as a function of field, temperature, and time. The current peaks have been observed in the current-time characteristics. These peaks have been attributed to the space-charge injection phenomena. Using the space-charge-limited model of current transients the mobility has been estimated to 2.2±0.2×10-9 cm2 v-1 s-1 at 301 K. The analysis of the temperature dependence of mobilities establishes that charge carrier transport in extended states involving trapping is predominant.

  16. Trapping tsetse flies on water

    Directory of Open Access Journals (Sweden)

    Laveissière C.

    2011-05-01

    Full Text Available Riverine tsetse flies such as Glossina palpalis gambiensis and G. tachinoides are the vectors of human and animal trypanosomoses in West Africa. Despite intimate links between tsetse and water, to our knowledge there has never been any attempt to design trapping devices that would catch tsetse on water. In mangrove (Guinea one challenging issue is the tide, because height above the ground for a trap is a key factor affecting tsetse catches. The trap was mounted on the remains of an old wooden dugout, and attached with rope to nearby branches, thereby allowing it to rise and fall with the tide. Catches showed a very high density of 93.9 flies/”water-trap”/day, which was significantly higher (p < 0.05 than all the catches from other habitats where the classical trap had been used. In savannah, on the Comoe river of South Burkina Faso, the biconical trap was mounted on a small wooden raft anchored to a stone, and catches were compared with the classical biconical trap put on the shores. G. p. gambiensis and G. tachinoides densities were not significantly different from those from the classical biconical one. The adaptations described here have allowed to efficiently catch tsetse on the water, which to our knowledge is reported here for the first time. This represents a great progress and opens new opportunities to undertake studies on the vectors of trypanosomoses in mangrove areas of Guinea, which are currently the areas showing the highest prevalences of sleeping sickness in West Africa. It also has huge potential for tsetse control using insecticide impregnated traps in savannah areas where traps become less efficient in rainy season. The Guinean National control programme has already expressed its willingness to use such modified traps in its control campaigns in Guinea, as has the national PATTEC programme in Burkina Faso during rainy season.

  17. Proximity and Force Characteristics of CMC Touch Sensor with Square/Dome-shaped Sensor Elements

    Science.gov (United States)

    Kawamura, T.; Inaguma, N.; Kakizaki, Y.; Yamada, H.; Tani, K.

    2013-04-01

    A tactile sensor called Carbon Micro Coil (CMC) touch sensor was developed by CMC Technology Development Co., Ltd. The sensor's elements used in the experiments of this paper are made of silicon rubber containing CMCs several micrometers in diameter. One of the elements is molded into a square 30 mm on a side and 3 mm thick; the other is a dome 16 mm in diameter and 2 mm height. CMCs in the sensor element contribute to the electrical conductivity and the sensor element is considered to constitute an LCR circuit. When an object approaches to the sensor element or the sensor element is deformed mechanically, the impedance changes, and the CMC sensor detects the impedance changes by measuring the modulation of amplitude and phase of an input excitation signal to the sensor element. The CMC sensor also creates voltage signals of the R- and LC-components separately according to the amplitude and phase modulation. In this paper, the characteristics of the CMC sensor with respect to its proximity and force senses are investigated. First, the output of the CMC sensor with the square-shaped sensor element is measured when an object approaches to the sensor element. Next, the output of the CMC sensor with the dome-shaped sensor element is measured when fine deformations of 1 to 5 μm are applied to the sensor element under variable compression force. The results suggest that the CMC sensor can measure the force variance applied to the sensor element as well as the distance between the sensor element and an object.

  18. Simulation Research on Self-compensation Technique of Temperature-induced Scale Factor Error for Optical Voltage Sensor%光学电压互感器变比温度误差自补偿技术仿真研究

    Institute of Scientific and Technical Information of China (English)

    李传生; 荆平; 张朝阳; 孙海江

    2014-01-01

    变比温度误差是限制光学电压互感器实用化的主要因素。分析Faraday旋光器及BGO晶体线性电光系数的温度相关性对互感器变比的影响机制,提出一种基于Faraday旋光角温度特性及其对互感器变比的影响自动补偿BGO晶体电光系数温度相关性的变比误差自补偿方法。仿真结果表明:在–40+70℃,对于温度系数为0.04/℃的Faraday旋光器,当常温下Faraday旋光角在41.643.2时,变比误差在0.5%以内;当常温下Faraday旋光角为42.3时,互感器的变比误差最小,约为0.3%。要使补偿后互感器的变比误差小于0.2%,Faraday 旋光角的温度系数应小于0.03/℃。该方法为光学电压互感器变比温度误差的抑制提供新途径。%The temperature-induced scale factor error is a primary constraint on the practical applications of the optical voltage sensor (OVS). The effect mechanism of the temperature-dependent rotation angle of the Faraday rotator and the temperature-dependent linear electro-optic coefficient of the BGO crystal on the scale factor is analyzed. The method utilizing the temperature dependence of the Faraday rotator and its effect on the scale factor to self-compensate the scale factor error of the temperature-dependent electro-optic coefficient of the BGO crystal is presented. Over the temperature range from –40℃ to +70℃, if the temperature coefficient of the Faraday rotation angle is 0.04/℃, the rotation angle at room temperature must be set between 41.6 and 43.2 to ensure the scale factor error of the sensor to be within0.5%. In addition, when the rotation angle at room temperature is 42.3, the scale factor error obtains the minimum 0.3%. If the scale factor error of the sensor is required to be controlled within0.2% after compensation, the temperature coefficient of the Faraday rotation angle must be less than 0.03/℃. The proposed method offers a potential

  19. Wide Dynamic Range CMOS Potentiostat for Amperometric Chemical Sensor

    OpenAIRE

    Wei-Song Wang; Wei-Ting Kuo; Hong-Yi Huang; Ching-Hsing Luo

    2010-01-01

    Presented is a single-ended potentiostat topology with a new interface connection between sensor electrodes and potentiostat circuit to avoid deviation of cell voltage and linearly convert the cell current into voltage signal. Additionally, due to the increased harmonic distortion quantity when detecting low-level sensor current, the performance of potentiostat linearity which causes the detectable current and dynamic range to be limited is relatively decreased. Thus, to alleviate these irreg...

  20. A reservoir trap for antiprotons

    CERN Document Server

    Smorra, Christian; Franke, Kurt; Nagahama, Hiroki; Schneider, Georg; Higuchi, Takashi; Van Gorp, Simon; Blaum, Klaus; Matsuda, Yasuyuki; Quint, Wolfgang; Walz, Jochen; Yamazaki, Yasunori; Ulmer, Stefan

    2015-01-01

    We have developed techniques to extract arbitrary fractions of antiprotons from an accumulated reservoir, and to inject them into a Penning-trap system for high-precision measurements. In our trap-system antiproton storage times > 1.08 years are estimated. The device is fail-safe against power-cuts of up to 10 hours. This makes our planned comparisons of the fundamental properties of protons and antiprotons independent from accelerator cycles, and will enable us to perform experiments during long accelerator shutdown periods when background magnetic noise is low. The demonstrated scheme has the potential to be applied in many other precision Penning trap experiments dealing with exotic particles.

  1. Pattern formation with trapped ions

    CERN Document Server

    Lee, Tony E

    2010-01-01

    We propose an experiment to study collective behavior in a nonlinear medium of trapped ions. Using laser cooling and heating and an anharmonic trap potential, one can turn an ion into a nonlinear van der Pol-Duffing oscillator. A chain of ions interacting electrostatically has stable plane waves for all parameters. The system also behaves like an excitable medium, since a sufficiently large perturbation generates a travelling pulse. Small chains exhibit multistability and limit cycles. We account for noise from spontaneous emission in the amplitude equation and find that the patterns are observable for realistic experimental parameters. The tunability of ion traps makes them an exciting setting to study nonequilibrium statistical physics.

  2. Modified Penning-Malmberg Trap for Storing Antiprotons

    Science.gov (United States)

    Sims, William H.; Martin, James; Lewis, Raymond

    2005-01-01

    A modified Penning-Malmberg trap that could store a small cloud of antiprotons for a relatively long time (weeks) has been developed. This trap is intended for use in research on the feasibility of contemplated future matter/antimatter-annihilation systems as propulsion sources for spacecraft on long missions. This trap is also of interest in its own right as a means of storing and manipulating antiprotons for terrestrial scientific experimentation. The use of Penning-Malmberg traps to store antiprotons is not new. What is new here is the modified trap design, which utilizes state-of-the-art radiofrequency (RF) techniques, including ones that, heretofore, have been used in radio-communication applications but not in iontrap applications. A basic Penning-Malmberg trap includes an evacuated round tube that contains or is surrounded by three or more collinear tube electrodes. A steady axial magnetic field that reaches a maximum at the geometric center of the tube is applied by an external source, and DC bias voltages that give rise to an electrostatic potential that reaches a minimum at the center are applied to the electrodes. The combination of electric and magnetic fields confines the charged particles (ions or electrons) for which it was designed to a prolate spheroidal central region. However, geometric misalignments and the diffusive cooling process prevent the steady fields of a basic Penning- Malmberg trap from confining the particles indefinitely. In the modified Penning-Malmberg trap, the loss of antiprotons is reduced or eliminated by use of a "rotating-wall" RF stabilization scheme that also heats the antiproton cloud to minimize loss by matter/antimatter annihilation. The scheme involves the superposition of a quadrupole electric field that rotates about the cylindrical axis at a suitably chosen radio frequency. The modified Penning-Malmberg trap (see Figure 1) includes several collinear sets of electrodes inside a tubular vacuum chamber. Each set

  3. Effects of biased irradiation on charge trapping in HfO2 dielectric thin films

    Science.gov (United States)

    Mu, Yifei; Zhao, Ce Zhou; Lu, Qifeng; Zhao, Chun; Qi, Yanfei; Lam, Sang; Mitrovic, Ivona Z.; Taylor, Stephen; Chalker, Paul R.

    2017-09-01

    This paper reports the low-dose-rate radiation response of Al-HfO2/SiO2-Si MOS devices, in which the gate dielectric was formed by atomic layer deposition (ALD) with 5-nm equivalent oxide thickness. The degradation of the devices was characterized by a pulse capacitance-voltage (CV) and on-site radiation response technique under continuous gamma (γ) ray exposure at a relatively low dose rate of 0.116 rad (HfO2)/s. Compared with conventional CV measurements, the proposed measurements extract significant variations of flat-band voltage shift of the hafnium based MOS devices. The large flat-band voltage shift is mainly attributed to the radiation-induced oxide trapped charges, which are not readily compensated by bias-induced charges produced over the measurement timescales (for timescales less than 5 ms). A negative flat-band voltage shift up to -1.02 V was observed under a positive biased irradiation with the total dose up to 40 krad (HfO2) and with the electric field of 0.5 MV/cm. This is attributed to net positive charge generation in the HfO2 oxide layer. The generated charges are transported towards the HfO2/SiO2 interface, and then form effective trapped holes in the HfO2. Similarly, a positive flat-band voltage shift up to 1.1 V was observed from irradiation under negative bias with an electric field of -0.5 MV/cm. The positive shift is mainly due to the accumulation of trapped electrons. Analyses of the experimental results suggest that both hole and electron trapping can dominate the radiation response performance of the HfO2-based MOS devices depending upon the applied bias. It was also found there was no distinct border traps with irradiation in all cases.

  4. Trapped charge densities in Al2O3-based silicon surface passivation layers

    Science.gov (United States)

    Jordan, Paul M.; Simon, Daniel K.; Mikolajick, Thomas; Dirnstorfer, Ingo

    2016-06-01

    In Al2O3-based passivation layers, the formation of fixed charges and trap sites can be strongly influenced by small modifications in the stack layout. Fixed and trapped charge densities are characterized with capacitance voltage profiling and trap spectroscopy by charge injection and sensing, respectively. Al2O3 layers are grown by atomic layer deposition with very thin (˜1 nm) SiO2 or HfO2 interlayers or interface layers. In SiO2/Al2O3 and HfO2/Al2O3 stacks, both fixed charges and trap sites are reduced by at least a factor of 5 compared with the value measured in pure Al2O3. In Al2O3/SiO2/Al2O3 or Al2O3/HfO2/Al2O3 stacks, very high total charge densities of up to 9 × 1012 cm-2 are achieved. These charge densities are described as functions of electrical stress voltage, time, and the Al2O3 layer thickness between silicon and the HfO2 or the SiO2 interlayer. Despite the strong variation of trap sites, all stacks reach very good effective carrier lifetimes of up to 8 and 20 ms on p- and n-type silicon substrates, respectively. Controlling the trap sites in Al2O3 layers opens the possibility to engineer the field-effect passivation in the solar cells.

  5. Printed circuit board ion trap mass analyzer: its structure and performance.

    Science.gov (United States)

    Jiang, Dan; Jiang, Gong-Yu; Li, Xiao-Xu; Xu, Fu-Xing; Wang, Liang; Ding, Li; Ding, Chuan-Fan

    2013-06-18

    An ion trap (IT) mass analyzer can be simply built with low cost material-the printed circuit board (PCB). A printed circuit board ion trap (PCBIT) can perform ion trapping, mass analysis, and tandem mass spectrometry as a conventional ion trap mass analyzer. In a PCBIT, each PCB electrode was fabricated to specially designed patterns with several separate electric strips. The strips' electrodes were insulated from each other and applied with different voltages during the experiment. Therefore, the electric field distribution inside the ion trap region may be adjusted and optimized by simply adjusting the voltage on each strip. The performance of the PCBIT can also be optimized since the property of an ion trap is strongly dependent on the field distribution. The fabrication, operation, and performance of the PCBIT are described and characterized in this paper. A prototype PCBIT was built with two pairs of 64 mm × 12 mm PCB rectangular plates and one pair of 10 mm × 10 mm stainless steel square plates. A mass analysis with a resolving power of over 1500 and a mass range of around 3000 Th was observed. The mass-selected isolation and collision-induced dissociation (CID) of ions were also tested using the homemade PCBIT system. The adjustable electric field distribution, simple structure, and low cost of PCBIT make it certainly suitable for the further miniaturization of the portable mass spectrometer.

  6. Functionality of the voltage-gated proton channel truncated in S4.

    Science.gov (United States)

    Sakata, Souhei; Kurokawa, Tatsuki; Nørholm, Morten H H; Takagi, Masahiro; Okochi, Yoshifumi; von Heijne, Gunnar; Okamura, Yasushi

    2010-02-02

    The voltage sensor domain (VSD) is the key module for voltage sensing in voltage-gated ion channels and voltage-sensing phosphatases. Structurally, both the VSD and the recently discovered voltage-gated proton channels (Hv channels) voltage sensor only protein (VSOP) and Hv1 contain four transmembrane segments. The fourth transmembrane segment (S4) of Hv channels contains three periodically aligned arginines (R1, R2, R3). It remains unknown where protons permeate or how voltage sensing is coupled to ion permeation in Hv channels. Here we report that Hv channels truncated just downstream of R2 in the S4 segment retain most channel properties. Two assays, site-directed cysteine-scanning using accessibility of maleimide-reagent as detected by Western blotting and insertion into dog pancreas microsomes, both showed that S4 inserts into the membrane, even if it is truncated between the R2 and R3 positions. These findings provide important clues to the molecular mechanism underlying voltage sensing and proton permeation in Hv channels.

  7. A New Atom Trap The Annular Shell Atom Trap (ASAT)

    CERN Document Server

    Pilloff, H S; Pilloff, Herschel S.; Horbatsch, Marko

    2002-01-01

    In the course of exploring some aspects of atom guiding in a hollow, optical fiber, a small negative potential energy well was found just in front of the repulsive or guiding barrier. This results from the optical dipole and the van der Waals potentials. The ground state for atoms bound in this negative potential well was determined by numerically solving the Schrodinger eq. and it was found that this negative well could serve as an atom trap. This trap is referred to as the Annular Shell Atom Trap or ASAT because of the geometry of the trapped atoms which are located in the locus of points defining a very thin annular shell just in front of the guiding barrier. A unique feature of the ASAT is the compression of the atoms from the entire volume to the volume of the annular shell resulting in a very high density of atoms in this trap. This trap may have applications to very low temperatures using evaporative cooling and possibly the formation of BEC. Finally, a scheme is discussed for taking advantage of the d...

  8. Enabling Technologies for Scalable Trapped Ion Quantum Computing

    Science.gov (United States)

    Crain, Stephen; Gaultney, Daniel; Mount, Emily; Knoernschild, Caleb; Baek, Soyoung; Maunz, Peter; Kim, Jungsang

    2013-05-01

    Scalability is one of the main challenges of trapped ion based quantum computation, mainly limited by the lack of enabling technologies needed to trap, manipulate and process the increasing number of qubits. Microelectromechanical systems (MEMS) technology allows one to design movable micromirrors to focus laser beams on individual ions in a chain and steer the focal point in two dimensions. Our current MEMS system is designed to steer 355 nm pulsed laser beams to carry out logic gates on a chain of Yb ions with a waist of 1.5 μm across a 20 μm range. In order to read the state of the qubit chain we developed a 32-channel PMT with a custom read-out circuit operating near the thermal noise limit of the readout amplifier which increases state detection fidelity. We also developed a set of digital to analog converters (DACs) used to supply analog DC voltages to the electrodes of an ion trap. We designed asynchronous DACs to avoid added noise injection at the update rate commonly found in synchronous DACs. Effective noise filtering is expected to reduce the heating rate of a surface trap, thus improving multi-qubit logic gate fidelities. Our DAC system features 96 channels and an integrated FPGA that allows the system to be controlled in real time. This work was supported by IARPA/ARO.

  9. Scalable digital hardware for a trapped ion quantum computer

    Science.gov (United States)

    Mount, Emily; Gaultney, Daniel; Vrijsen, Geert; Adams, Michael; Baek, So-Young; Hudek, Kai; Isabella, Louis; Crain, Stephen; van Rynbach, Andre; Maunz, Peter; Kim, Jungsang

    2016-12-01

    Many of the challenges of scaling quantum computer hardware lie at the interface between the qubits and the classical control signals used to manipulate them. Modular ion trap quantum computer architectures address scalability by constructing individual quantum processors interconnected via a network of quantum communication channels. Successful operation of such quantum hardware requires a fully programmable classical control system capable of frequency stabilizing the continuous wave lasers necessary for loading, cooling, initialization, and detection of the ion qubits, stabilizing the optical frequency combs used to drive logic gate operations on the ion qubits, providing a large number of analog voltage sources to drive the trap electrodes, and a scheme for maintaining phase coherence among all the controllers that manipulate the qubits. In this work, we describe scalable solutions to these hardware development challenges.

  10. Low Voltage Power Supply Incorporating Ceramic Transformer

    CERN Document Server

    Imori, M

    2007-01-01

    A low voltage power supply provides the regulated output voltage of 1 V from the supply voltage around 48 V. The low voltage power supply incorporates a ceramic transformer which utilizes piezoelectric effect to convert voltage. The ceramic transformer isolates the secondary from the primary, thus providing the ground isolation between the supply and the output voltages. The ceramic transformer takes the place of the conventional magnetic transformer. The ceramic transformer is constructed from a ceramic bar and does not include any magnetic material. So the low voltage power supply can operate under a magnetic field. The output voltage is stabilized by feedback. A feedback loop consists of an error amplifier, a voltage controlled oscillator and a driver circuit. The amplitude ratio of the transformer has dependence on the frequency, which is utilized to stabilize the output voltage. The low voltage power supply is investigated on the analogy of the high voltage power supply similarly incorporating the cerami...

  11. Detailed Study of Amplitude Nonlinearity in Piezoresistive Force Sensors

    Directory of Open Access Journals (Sweden)

    Pablo Gonzalez De Santos

    2011-09-01

    Full Text Available This article upgrades the RC linear model presented for piezoresistive force sensors. Amplitude nonlinearity is found in sensor conductance, and a characteristic equation is formulated for modeling its response under DC-driving voltages below 1 V. The feasibility of such equation is tested on four FlexiForce model A201-100 piezoresistive sensors by varying the sourcing voltage and the applied forces. Since the characteristic equation proves to be valid, a method is presented for obtaining a specific sensitivity in sensor response by calculating the appropriate sourcing voltage and feedback resistor in the driving circuit; this provides plug-and-play capabilities to the device and reduces the start-up time of new applications where piezoresistive devices are to be used. Finally, a method for bypassing the amplitude nonlinearity is presented with the aim of reading sensor capacitance.

  12. Detailed study of amplitude nonlinearity in piezoresistive force sensors.

    Science.gov (United States)

    Paredes-Madrid, Leonel; Emmi, Luis; Garcia, Elena; de Santos, Pablo Gonzalez

    2011-01-01

    This article upgrades the RC linear model presented for piezoresistive force sensors. Amplitude nonlinearity is found in sensor conductance, and a characteristic equation is formulated for modeling its response under DC-driving voltages below 1 V. The feasibility of such equation is tested on four FlexiForce model A201-100 piezoresistive sensors by varying the sourcing voltage and the applied forces. Since the characteristic equation proves to be valid, a method is presented for obtaining a specific sensitivity in sensor response by calculating the appropriate sourcing voltage and feedback resistor in the driving circuit; this provides plug-and-play capabilities to the device and reduces the start-up time of new applications where piezoresistive devices are to be used. Finally, a method for bypassing the amplitude nonlinearity is presented with the aim of reading sensor capacitance.

  13. Innovation: the classic traps.

    Science.gov (United States)

    Kanter, Rosabeth Moss

    2006-11-01

    these traps.

  14. Modular High Voltage Power Supply

    Energy Technology Data Exchange (ETDEWEB)

    Newell, Matthew R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-05-18

    The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

  15. Trapping Triatominae in Silvatic Habitats

    Directory of Open Access Journals (Sweden)

    Noireau François

    2002-01-01

    Full Text Available Large-scale trials of a trapping system designed to collect silvatic Triatominae are reported. Live-baited adhesive traps were tested in various ecosystems and different triatomine habitats (arboreal and terrestrial. The trials were always successful, with a rate of positive habitats generally over 20% and reaching 48.4% for palm trees of the Amazon basin. Eleven species of Triatominae belonging to the three genera of public health importance (Triatoma, Rhodnius and Panstrongylus were captured. This trapping system provides an effective way to detect the presence of triatomines in terrestrial and arboreal silvatic habitats and represents a promising tool for ecological studies. Various lines of research are contemplated to improve the performance of this trapping system.

  16. Magneto optical trapping of Barium

    CERN Document Server

    De, S; Jungmann, K; Willmann, L

    2008-01-01

    First laser cooling and trapping of the heavy alkaline earth element barium has been achieved based on the strong 6s$^2$ $^1$S$_0$ - 6s6p $^1$P$_1$ transition for the main cooling. Due to the large branching into metastable D-states several additional laser driven transitions are required to provide a closed cooling cycle. A total efficiency of $0.4(1) \\cdot 10^{-2}$ for slowing a thermal atomic beam and capturing atoms into a magneto optical trap was obtained. Trapping lifetimes of more than 1.5 s were observed. This lifetime is shortened at high laser intensities by photo ionization losses. The developed techniques will allow to extend significantly the number of elements that can be optically cooled and trapped.

  17. Seismic fault zone trapped noise

    National Research Council Canada - National Science Library

    Hillers, G; Campillo, M; Ben‐Zion, Y; Roux, P

    2014-01-01

    Systematic velocity contrasts across and within fault zones can lead to head and trapped waves that provide direct information on structural units that are important for many aspects of earthquake and fault mechanics...

  18. Voltage-controlled metal binding on polyelectrolyte-functionalized nanopores.

    Science.gov (United States)

    Actis, Paolo; Vilozny, Boaz; Seger, R Adam; Li, Xiang; Jejelowo, Olufisayo; Rinaudo, Marguerite; Pourmand, Nader

    2011-05-17

    Most of the research in the field of nanopore-based platforms is focused on monitoring ion currents and forces as individual molecules translocate through the nanopore. Molecular gating, however, can occur when target analytes interact with receptors appended to the nanopore surface. Here we show that a solid state nanopore functionalized with polyelectrolytes can reversibly bind metal ions, resulting in a reversible, real-time signal that is concentration dependent. Functionalization of the sensor is based on electrostatic interactions, requires no covalent bond formation, and can be monitored in real time. Furthermore, we demonstrate how the applied voltage can be employed to tune the binding properties of the sensor. The sensor has wide-ranging applications and, its simplest incarnation can be used to study binding thermodynamics using purely electrical measurements with no need for labeling.

  19. Reliability criteria for voltage stability

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Carson W.; Silverstein, Brian L. [Bonneville Power Administration, Portland, OR (United States)

    1994-12-31

    In face of costs pressures, there is need to allocate scare resources more effectively in order to achieve voltage stability. This naturally leads to development of probabilistic criteria and notions of rick management. In this paper it is presented a discussion about criteria for long term voltage stability limited to the case in which the time frames are topically several minutes. (author) 14 refs., 1 fig.

  20. A Voltage Quality Detection Method

    DEFF Research Database (Denmark)

    Chen, Zhe; Wei, Mu

    2008-01-01

    This paper presents a voltage quality detection method based on a phase-locked loop (PLL) technique. The technique can detect the voltage magnitude and phase angle of each individual phase under both normal and fault power system conditions. The proposed method has the potential to evaluate vario...... power quality disturbances, such as interruptions, sags and imbalances. Simulation studies have been performed. The effectiveness of the proposed method has been demonstrated under the simulated typical power disturbances....

  1. Small, Inexpensive Combined NOx Sensor and O2 Sensor

    Energy Technology Data Exchange (ETDEWEB)

    W. N. Lawless; C. F. Clark, Jr.

    2008-09-08

    electronic control units were designed and built. One control unit provides independent constant voltages to the NOx and oxygen sensors and reads the current from them (that is, detects the amount of test gas present). The second controller holds the fully-assembled sensor at the desired operating temperature and controllably pumps excess oxygen from the test chamber. While the development of the sensor body was a complete success, the development of the packaging was only partially successful. All of the basic principles were demonstrated, but the packaging was too complex to optimize the operation within the resources of the program. Thus, no fully-assembled sensors were sent to outside labs for testing of cross-sensitivities, response times, etc. Near the end of the program, Sensata Technologies of Attleboro, MA tested the sensor bodies and confirmed the CeramPhysics measurements as indicated in the following attached letter. Sensata was in the process of designing their own packaging for the sensor and performing cross-sensitivity tests when they stopped all sensor development work due to the automotive industry downturn. Recently Ceramatec Inc. of Salt Lake City has expressed an interest in testing the sensor, and other licensing opportunities are being pursued.

  2. A matter of quantum voltages.

    Science.gov (United States)

    Sellner, Bernhard; Kathmann, Shawn M

    2014-11-14

    Voltages inside matter are relevant to crystallization, materials science, biology, catalysis, and aqueous chemistry. The variation of voltages in matter can be measured by experiment, however, modern supercomputers allow the calculation of accurate quantum voltages with spatial resolutions of bulk systems well beyond what can currently be measured provided a sufficient level of theory is employed. Of particular interest is the Mean Inner Potential (V(o))--the spatial average of these quantum voltages referenced to the vacuum. Here we establish a protocol to reliably evaluate V(o) from quantum calculations. Voltages are very sensitive to the distribution of electrons and provide metrics to understand interactions in condensed phases. In the present study, we find excellent agreement with measurements of V(o) for vitrified water and salt crystals and demonstrate the impact of covalent and ionic bonding as well as intermolecular/atomic interactions. Certain aspects in this regard are highlighted making use of simple model systems/approximations. Furthermore, we predict V(o) as well as the fluctuations of these voltages in aqueous NaCl electrolytes and characterize the changes in their behavior as the resolution increases below the size of atoms.

  3. Low power RF amplifier circuit for ion trap applications

    Science.gov (United States)

    Noriega, J. R.; García-Delgado, L. A.; Gómez-Fuentes, R.; García-Juárez, A.

    2016-09-01

    A low power RF amplifier circuit for ion trap applications is presented and described. The amplifier is based on a class-D half-bridge amplifier with a voltage mirror driver. The RF amplifier is composed of an RF class-D amplifier, an envelope modulator to ramp up the RF voltage during the ion analysis stage, a detector or amplitude demodulation circuit for sensing the output signal amplitude, and a feedback amplifier that linearizes the steady state output of the amplifier. The RF frequency is set by a crystal oscillator and the series resonant circuit is tuned to the oscillator frequency. The resonant circuit components have been chosen, in this case, to operate at 1 MHz. In testings, the class-D stage operated at a maximum of 78 mW at 1.1356 MHz producing 225 V peak.

  4. VOLTAGE COMPENSATION USING ARTIFICIAL NEURAL NETWORK

    African Journals Online (AJOL)

    VOLTAGE COMPENSATION USING ARTIFICIAL NEURAL NETWORK: A CASE STUDY OF RUMUOLA DISTRIBUTION NETWORK. ... The artificial neural networks controller engaged to controlling the dynamic voltage ... Article Metrics.

  5. Calcium binding protein-mediated regulation of voltage-gated calcium channels linked to human diseases

    Institute of Scientific and Technical Information of China (English)

    Nasrin NFJATBAKHSH; Zhong-ping FENG

    2011-01-01

    Calcium ion entry through voltage-gated calcium channels is essential for cellular signalling in a wide variety of cells and multiple physiological processes. Perturbations of voltage-gated calcium channel function can lead to pathophysiological consequences. Calcium binding proteins serve as calcium sensors and regulate the calcium channel properties via feedback mechanisms. This review highlights the current evidences of calcium binding protein-mediated channel regulation in human diseases.

  6. Electrical Characteristics of Silicon Pixel Sensors

    CERN Document Server

    Gorelov, I; Hoeferkamp, M; Mata-Bruni, V; Santistevan, G; Seidel, S C; Ciocio, A; Einsweiler, K F; Emes, J; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Marchesini, R; McCormack, F; Milgrome, O; Palaio, N; Pengg, F; Richardson, J; Zizka, G; Ackers, M; Comes, G; Fischer, P; Keil, M; Klasen, V; Kühl, T; Meuser, S; Ockenfels, W; Raith, B; Treis, J; Wermes, N; Gössling, C; Hügging, F G; Klaiber Lodewigs, Jonas M; Krasel, O; Wüstenfeld, J; Wunstorf, R; Barberis, D; Beccherle, R; Caso, Carlo; Cervetto, M; Darbo, G; Gagliardi, G; Gemme, C; Morettini, P; Netchaeva, P; Osculati, B; Rossi, L; Charles, E; Fasching, D; Blanquart, L; Breugnon, P; Calvet, D; Clemens, J-C; Delpierre, P A; Hallewell, G D; Laugier, D; Mouthuy, T; Rozanov, A; Valin, I; Andreazza, A; Caccia, M; Citterio, M; Lari, T; Meroni, C; Ragusa, F; Troncon, C; Vegni, G; Lutz, Gerhard; Richter, R H; Rohe, T; Boyd, GR; Skubic, P L; Sícho, P; Tomasek, L; Vrba, V; Holder, M; Ziolkowski, M; Cauz, D; Cobal-Grassmann, M; D'Auria, S; De Lotto, B; del Papa, C; Grassmann, H; Santi, L; Becks, K H; Lenzen, G; Linder, C

    2001-01-01

    Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.

  7. Meeting power requirements for organic printed sensor tags (Conference Presentation)

    Science.gov (United States)

    Ng, Tse Nga; Mei, Ping; Schwartz, David E.; Veres, Janos; Broms, Per; Karlsson, Christer

    2016-11-01

    In electronic systems, components often require different supply voltage for operation. In order to meet this requirement and to optimize power consumption for flexible electronics, we demonstrate a pulsed voltage multiplier that boosts the voltage at specific circuit nodes above the supply voltage. A five-stage pulsed voltage multiplier is shown to provide an output voltage up to 18 V from a supply voltage of 10 V, with minimum 10 ms pulse rise time for a 70 pF load. A key requirement for the pulsed voltage multiplier circuit is low device leakage to boost the output voltage level. To minimize leakage, the composition of the organic semiconducting layer is modified by blending an insulating polymer with the small molecule semiconductor. This modification allows control over the transistor turn-on voltage, which enables low leakage current required for operation of the circuits. The printed multiplier allows a single power source to deliver multiple voltage levels and enables integration of lower voltage logic with components that require higher operating voltage, for example, in the case of recording data into memory cells in sensor tags.

  8. A tip-attached tuning fork sensor for the control of DNA translocation through a nanopore

    Science.gov (United States)

    Hyun, Changbae; Kaur, Harpreet; Huang, Tao; Li, Jiali

    2017-02-01

    In this work, we demonstrate that a tuning fork can be used as a force detecting sensor for manipulating DNA molecules and for controlling the DNA translocation rate through a nanopore. One prong of a tuning fork is glued with a probe tip which DNA molecules can be attached to. To control the motion and position of the tip, the tuning fork is fixed to a nanopositioning system which has sub-nanometer position control. A fluidic chamber is designed to fulfill many requirements for the experiment: for the access of a DNA-attached tip approaching to a nanopore, for housing a nanopore chip, and for measuring ionic current through a solid-state nanopore with a pair of electrodes. The location of a nanopore is first observed by transmission electron microscopy, and then is determined inside the liquid chambers with an optical microscope combined with local scanning the probe tip on the nanopore surface. When a DNA-immobilized tip approaches a membrane surface near a nanopore, free ends of the immobilized DNA strings can be pulled and trapped into the pore by an applied voltage across the nanopore chip, resulting in an ionic current reduction through the nanopore. The trapped DNA molecules can be lifted up from the nanopore at a user controlled speed. This integrated apparatus allows manipulation of biomolecules (DNA, RNA, and proteins) attached to a probe tip with sub-nanometer precision, and simultaneously allows measurement of the biomolecules by a nanopore device.

  9. Neural network-based sensor signal accelerator.

    Energy Technology Data Exchange (ETDEWEB)

    Vogt, M. C.

    2000-10-16

    A strategy has been developed to computationally accelerate the response time of a generic electronic sensor. The strategy can be deployed as an algorithm in a control system or as a physical interface (on an embedded microcontroller) between a slower responding external sensor and a higher-speed control system. Optional code implementations are available to adjust algorithm performance when computational capability is limited. In one option, the actual sensor signal can be sampled at the slower rate with adaptive linear neural networks predicting the sensor's future output and interpolating intermediate synthetic output values. In another option, a synchronized collection of predictors sequentially controls the corresponding synthetic output voltage. Error is adaptively corrected in both options. The core strategy has been demonstrated with automotive oxygen sensor data. A prototype interface device is under construction. The response speed increase afforded by this strategy could greatly offset the cost of developing a replacement sensor with a faster physical response time.

  10. Nonlinear Transport In Gases, Traps And Surfaces

    Science.gov (United States)

    Šuvakov, M.; Marjanovic, S.

    2010-07-01

    We will present our numerical study of three different charge transport processes and we will compare properties, specially the nonlinearity, of these processes. First process is electron transport in gases in swarm regime. We used well tested Monte Carlo techique to investigate kinetic phenomena such as negative diferencial conductivity (NDC) or negative apsolute mobility (NAM). We explain these phenomena analysing the spatial profiles of the swarm and collision events. In the second part we will apply the same technique on positron transport to obtain the same level of understanding of positron transport as has been achieved for electrons. The influence of positronium formation, non-conservative process, is much larger than any comparable effects in electron transport due to attachment and/or ionisation. As a result several new phenomena have been observed, such as NDC for the bulk drift velocity. Additionaly, the same Monte Carlo technique is used for modeling and optimisation of Surko like positron traps in different geometries and field configurations. Third process we studied is the charge transport under voltage bias via single-electron tunnelings through the junctions between metallic particles on nanoparticle films. We show how the regular nanoparticle array and topologically inhomogeneous nanonetworks affect the charge transport. We find long-range correlations in the time series of charge fluctuation at individual nanoparticles and of flow along the junctions within the network. These correlations explain the occurrence of a large non-linearity in the simulated and experimentally measured current-voltage characteristics and non-Gaussian fluctuations of the current at the electrode.

  11. Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures

    Science.gov (United States)

    Jiménez-Molinos, F.; Palma, A.; Gámiz, F.; Banqueri, J.; López-Villanueva, J. A.

    2001-10-01

    A physical model for trap-assisted inelastic tunnel current through potential barriers in semiconductor structures has been developed. The model is based on the theory of multiphonon transitions between detrapped and trapped states and the only fitting parameters are those of the traps (energy level and concentration) and the Huang-Rhys factor. Therefore, dependences of the trapping and detrapping processes on the bias, position, and temperature can be obtained with this model. The results of the model are compared with experimental data of stress induced leakage current in metal-oxide-semiconductor devices. The average energy loss has been obtained and an interpretation is given of the curves of average energy loss versus oxide voltage. This allows us to identify the entrance of the assisted tunnel current in the Fowler-Nordheim regime. In addition, the dependence of the tunnel current and average energy loss on the model parameters has been studied.

  12. Ion Trapping, Storage, and Ejection in Structures for Lossless Ion Manipulations.

    Science.gov (United States)

    Zhang, Xinyu; Garimella, Sandilya V B; Prost, Spencer A; Webb, Ian K; Chen, Tsung-Chi; Tang, Keqi; Tolmachev, Aleksey V; Norheim, Randolph V; Baker, Erin S; Anderson, Gordon A; Ibrahim, Yehia M; Smith, Richard D

    2015-06-16

    A new Structures for Lossless Ion Manipulations (SLIM) module, having electrode arrays patterned on a pair of parallel printed circuit boards (PCB), was constructed and utilized to investigate capabilities for ion trapping at a pressure of 4 Torr. Positive ions were confined by application of RF voltages to a series of inner rung electrodes with alternating phase on adjacent electrodes, in conjunction with positive DC potentials on surrounding guard electrodes on each PCB. An axial DC field was also introduced by stepwise varying the DC potentials applied to the inner rung electrodes to control the ion transport and accumulation inside the ion trapping region. We show that ions can be trapped and accumulated with up to 100% efficiency, stored for at least 5 h with no significant losses, and then could be rapidly ejected from the SLIM trap. The present results provide a foundation for the development of much more complex SLIM devices that facilitate extended ion manipulations.

  13. Heating and ion transport in a Y-junction surface-electrode trap

    CERN Document Server

    Shu, G; Volin, C; Buikema, A; Nichols, C S; Stick, D; Brown, Kenneth R

    2014-01-01

    We measure ion heating following transport throughout a Y-junction surface-electrode ion trap. By carefully selecting the trap voltage update rate during adiabatic transport along a trap arm, we observe minimal heating relative to the anomalous heating background. Transport through the junction results in an induced heating between 37 and 150 quanta in the axial direction per traverse. To reliably measure heating in this range, we compare the experimental sideband envelope, including up to fourth-order sidebands, to a theoretical model. The sideband envelope method allows us to cover the intermediate heating range inaccessible to the first-order sideband and Doppler recooling methods. We conclude that quantum information processing in this ion trap will likely require sympathetic cooling in order to support high fidelity gates after junction transport.

  14. Sensor Compendium

    CERN Document Server

    Artuso, M; Bolla, G; Bortoletto, D; Caberera, B; Carlstrom, J E; Chang, C L; Cooper, W; Da Via, C; Demarteau, M; Fast, J; Frisch, H; Garcia-Sciveres, M; Golwala, S; Haber, C; Hall, J; Hoppe, E; Irwin, K D; Kagan, H; Kenney, C; Lee, A T; Lynn, D; Orrell, J; Pyle, M; Rusack, R; Sadrozinski, H; Sanchez, M C; Seiden, A; Trischuk, W; Vavra, J; Wetstein, M; Zhu, R-Y

    2013-01-01

    Sensors play a key role in detecting both charged particles and photons for all three frontiers in Particle Physics. The signals from an individual sensor that can be used include ionization deposited, phonons created, or light emitted from excitations of the material. The individual sensors are then typically arrayed for detection of individual particles or groups of particles. Mounting of new, ever higher performance experiments, often depend on advances in sensors in a range of performance characteristics. These performance metrics can include position resolution for passing particles, time resolution on particles impacting the sensor, and overall rate capabilities. In addition the feasible detector area and cost frequently provides a limit to what can be built and therefore is often another area where improvements are important. Finally, radiation tolerance is becoming a requirement in a broad array of devices. We present a status report on a broad category of sensors, including challenges for the future ...

  15. Microinstrument gradient-force optical trap.

    Science.gov (United States)

    Collins, S D; Baskin, R J; Howitt, D G

    1999-10-01

    A micromachined fiber-optic trap is presented. The trap consists of four single-mode, 1064-nm optical intersection. The beam fibers mounted in a micromachined silicon and glass housing. Micromachining provides the necessary precision to align the four optical fibers so that the outputs have a common intersection forms a strong three-dimensional gradient-force trap with trapping forces comparable with that of optical tweezers. Characterization of the multibeam fiber trap is illustrated for capture of polystyrene microspheres, computer simulations of the trap stiffness, and experimental determination of the trapping forces.

  16. Wind Sensor

    OpenAIRE

    Li, Jiaoyang; Ni, Jiqin

    2014-01-01

    Wind measurement is needed in many practical and scientific research situations. Some specific applications require to precisely measuring both wind direction and wind speed at the same time. Current commercial sensors for wind direction and wind speed measurement usually use ultrasonic technology and the sensors are very expensive (> $1500). In addition, the sensors are large in dimension and cannot measure airflow patterns in high spatial resolution. Therefore new and low cost wind speed an...

  17. Live trapping of hawks and owls

    Science.gov (United States)

    Stewart, R.E.; Cope, J.B.; Robbins, C.S.

    1945-01-01

    1. Hawks of six species (80 individuals) and owls of five species (37 individuals) were trapped for banding from November 1, 1943, to. May 26,1944. 2. In general, pole traps proved better than hand-operated traps or automatic traps using live bait. 3. Verbail pole traps proved very efficient, and were much more humane than padded steel traps because they rarely injured a captured bird. 4: Unbaited Verbail traps took a variety of raptors, in rough proportion to their local abundance, although slightly more of beneficial species were caught than of harmful types. 5. Hawks and owls were retrapped more readily in Verbail traps than in other types tried. 6. The number of song birds caught in Verbail traps was negligible. 7. Crows and vultures were not taken in Verbail traps, but possibly could be caught with bait.

  18. A Differential Reflective Intensity Optical Fiber Angular Displacement Sensor.

    Science.gov (United States)

    Jia, Binghui; He, Lei; Yan, Guodong; Feng, Yong

    2016-09-16

    In this paper, a novel differential reflective intensity optical fiber angular displacement sensor was proposed. This sensor can directly measure the angular and axial linear displacement of a flat surface. The structure of the sensor probe is simple and its basic principle was first analyzed according to the intensity modulation mechanisms. Secondly, in order to trim the dark output voltage to zero, the photoelectric conversion circuit was developed to adjust the signals. Then, the sensor model including the photoelectric conversion circuit has been established, and the influence of design parameters on the sensor output characteristic has been simulated. Finally, the design parameters of the sensor structure were obtained based on the simulation results; and an experimental test system was built for the sensor calibration. Experimental results show that the linear angular range and the sensitivity of the sensor were 74.4 and 0.051 V/°, respectively. Its change rules confirm the operating principle of the sensor well.

  19. A Differential Reflective Intensity Optical Fiber Angular Displacement Sensor

    Science.gov (United States)

    Jia, Binghui; He, Lei; Yan, Guodong; Feng, Yong

    2016-01-01

    In this paper, a novel differential reflective intensity optical fiber angular displacement sensor was proposed. This sensor can directly measure the angular and axial linear displacement of a flat surface. The structure of the sensor probe is simple and its basic principle was first analyzed according to the intensity modulation mechanisms. Secondly, in order to trim the dark output voltage to zero, the photoelectric conversion circuit was developed to adjust the signals. Then, the sensor model including the photoelectric conversion circuit has been established, and the influence of design parameters on the sensor output characteristic has been simulated. Finally, the design parameters of the sensor structure were obtained based on the simulation results; and an experimental test system was built for the sensor calibration. Experimental results show that the linear angular range and the sensitivity of the sensor were 74.4 and 0.051 V/°, respectively. Its change rules confirm the operating principle of the sensor well. PMID:27649199

  20. A Monolithic active pixel sensor for ionizing radiation using a 180nm HV-SOI process

    CERN Document Server

    Hemperek, Tomasz; Krüger, Hans; Wermes, Norbert

    2014-01-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on Partially Depleted High Voltage SOI technology (PD-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer while FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The XFAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry witch mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neu...

  1. A Monolithic Active Pixel Sensor for ionizing radiation using a 180 nm HV-SOI process

    Science.gov (United States)

    Hemperek, Tomasz; Kishishita, Tetsuichi; Krüger, Hans; Wermes, Norbert

    2015-10-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffers from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.

  2. Electrode voltage fall and total voltage of a transient arc

    Science.gov (United States)

    Valensi, F.; Ratovoson, L.; Razafinimanana, M.; Masquère, M.; Freton, P.; Gleizes, A.

    2016-06-01

    This paper deals with an experimental study of the components of a transient arc total voltage with duration of a few tens of ms and a current peak close to 1000 A. The cathode tip is made of graphite whereas the flat anode is made either of copper or of graphite; the electrodes gap is a few mm. The analysis of the electrical parameters is supported and validated by fast imaging and by two models: the first one is a 2D physical model of the arc allowing to calculate both the plasma temperature field and the arc voltage; the second model is able to estimate the transient heating of the graphite electrode. The main aim of the study was to detect the possible change of the cathode voltage fall (CVF) during the first instants of the arc. Indeed it is expected that during the first ms the graphite cathode is rather cool and the main mechanism of the electron emission should be the field effect emission, whereas after several tens of ms the cathode is strongly heated and thermionic emission should be predominant. We have observed some change in the apparent CVF but we have shown that this apparent change can be attributed to the variation of the solid cathode resistance. On the other hand, the possible change of CVF corresponding to the transition between a ‘cold’ and a ‘hot’ cathode should be weak and could not be characterized considering our measurement uncertainty of about 2 V. The arc column voltage (ACV) was estimated by subtracting the electrode voltage fall from the total arc voltage. The experimental transient evolution of the ACV is in very good agreement with the theoretical variation predicted by the model, showing the good ability of the model to study this kind of transient arc.

  3. SEMICONDUCTOR DEVICES A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices

    Science.gov (United States)

    Peng, Zhu; Liyang, Pan; Haiming, Gu; Fengying, Qiao; Ning, Deng; Jun, Xu

    2010-10-01

    A new modified method based on the charge pumping technique is proposed and adopted to extract the lateral profiles of oxide charges in an advanced MOSFET. A 0.12 μm SONOS device with 50 nm threshold voltage peak is designed and utilized to demonstrate the proposed method. The trapped charge distribution with a narrow peak can be precisely characterized with this method, which shows good consistency with the measured threshold voltage.

  4. High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip

    Science.gov (United States)

    Issadore, David; Franke, Thomas; Brown, Keith A.; Hunt, Thomas P.; Westervelt, Robert M.

    2010-01-01

    A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm2 in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip’s surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. PMID:20625468

  5. Gas Sensor

    KAUST Repository

    Luebke, Ryan

    2015-01-22

    A gas sensor using a metal organic framework material can be fully integrated with related circuitry on a single substrate. In an on-chip application, the gas sensor can result in an area-efficient fully integrated gas sensor solution. In one aspect, a gas sensor can include a first gas sensing region including a first pair of electrodes, and a first gas sensitive material proximate to the first pair of electrodes, wherein the first gas sensitive material includes a first metal organic framework material.

  6. Sensor web

    Science.gov (United States)

    Delin, Kevin A. (Inventor); Jackson, Shannon P. (Inventor)

    2011-01-01

    A Sensor Web formed of a number of different sensor pods. Each of the sensor pods include a clock which is synchronized with a master clock so that all of the sensor pods in the Web have a synchronized clock. The synchronization is carried out by first using a coarse synchronization which takes less power, and subsequently carrying out a fine synchronization to make a fine sync of all the pods on the Web. After the synchronization, the pods ping their neighbors to determine which pods are listening and responded, and then only listen during time slots corresponding to those pods which respond.

  7. Tuning the hysteresis voltage in 2D multilayer MoS2 FETs

    Science.gov (United States)

    Jiang, Jie; Zheng, Zhouming; Guo, Junjie

    2016-10-01

    The hysteresis tuning is of great significance before the two-dimensional (2D) molybdenum disulfide (MoS2) field-effect transistors (FETs) can be practically used in the next-generation nanoelectronic devices. In this paper, a simple and effective annealing method was developed to tune the hysteresis voltage in 2D MoS2 transistors. It was found that high temperature (175 °C) annealing in air could increase the hysteresis voltage from 8.0 V (original device) to 28.4 V, while a next vacuum annealing would reduce the hysteresis voltage to be only 2.0 V. An energyband diagram model based on electron trapping/detrapping due to oxygen adsorption is proposed to understand the hysteresis mechanism in multilayer MoS2 FET. This simple method for tuning the hysteresis voltage of MoS2 FET can make a significant step toward 2D nanoelectronic device applications.

  8. Unbalanced Voltage Compensation in Low Voltage Residential AC Grids

    DEFF Research Database (Denmark)

    Trintis, Ionut; Douglass, Philip; Munk-Nielsen, Stig

    2016-01-01

    This paper describes the design and test of a control algorithm for active front-end rectifiers that draw power from a residential AC grid to feed heat pump loads. The control algorithm is able to control the phase to neutral or phase to phase RMS voltages at the point of common coupling....... The voltage control was evaluated with either active or reactive independent phase load current control. The control performance in field operation in a residential grid situated in Bornholm, Denmark was investigated for different use cases....

  9. A magnetic particle micro-trap for large trapping surfaces

    KAUST Repository

    Gooneratne, Chinthaka P.

    2012-01-08

    Manipulation of micron-size magnetic particles of the superparamagnetic type contributes significantly in many applications like controlling the antibody/antigen binding process in immunoassays. Specifically, more target biomolecules can be attached/tagged and analyzed since the three dimensional structure of the magnetic particles increases the surface to volume ratio. Additionally, such biomolecular-tagged magnetic particles can be easily manipulated by an external magnetic field due to their superparamagnetic behavior. Therefore, magnetic particle- based immunoassays are extensively applied in micro-flow cytometry. The design of a square-loop micro-trap as a magnetic particle manipulator as well as numerical and experimental analysis is presented. Experimental results showed that the micro-trap could successfully trap and concentrate magnetic particles from a large to a small area with a high spatial range.

  10. Highly Accurate Derivatives for LCL-Filtered Grid Converter with Capacitor Voltage Active Damping

    DEFF Research Database (Denmark)

    Xin, Zhen; Loh, Poh Chiang; Wang, Xiongfei

    2016-01-01

    The middle capacitor voltage of an LCL-filter, if fed back for synchronization, can be used for active damping. An extra sensor for measuring the capacitor current is then avoided. Relating the capacitor voltage to existing popular damping techniques designed with capacitor current feedback would...... are then proposed, based on either second-order or non-ideal generalized integrator. Performances of these derivatives have been found to match the ideal “s” function closely. Active damping based on capacitor voltage feedback can therefore be realized accurately. Experimental results presented have verified...

  11. Digital Realization of Capacitor-Voltage Feedback Active Damping for LCL-Filtered Grid Converters

    DEFF Research Database (Denmark)

    Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

    2015-01-01

    The capacitor voltage of an LCL-filter can also be used for active damping, if it is fed back for synchronization. By this way, an extra current sensor can be avoided. Compared with the existing active damping techniques designed with capacitor current feedback, the capacitor voltage feedback....... To overcome their drawbacks, a new derivative method is then proposed, based on the non-ideal generalized integrator. The performance of the proposed derivative has been found to match the ideal “s” function closely. Active damping based on capacitor voltage feedback can therefore be realized accurately...

  12. Gas sensing properties of branched carbon nanotube-based structures using a novel low voltage emission.

    Science.gov (United States)

    Darbari, S; Azimi, S; Abdi, Y; Mohajerzadeh, S

    2012-11-01

    Branched carbon nanostructures have been successfully grown on interdigital comb-like structures for a gas sensing application. Field emission scanning electron microscopy has been utilized to investigate the morphology and structure of the grown nanostructures at different stages of growth process. Tunneling current of the fabricated sensor has been measured when a monotonically increasing voltage is applied between the electrodes. The effect of exposure to three different gases on the measured current has been studied. A data processing on the measured current voltage characteristics results in the evolution of various peaks at distinct voltages which depends on the type of the gas.

  13. Reducing burn-in voltage loss in polymer solar cells by increasing the polymer crystallinity

    KAUST Repository

    Heumueller, Thomas

    2014-08-01

    In order to commercialize polymer solar cells, the fast initial performance losses present in many high efficiency materials will have to be managed. This burn-in degradation is caused by light-induced traps and its characteristics depend on which polymer is used. We show that the light-induced traps are in the bulk of the active layer and we find a direct correlation between their presence and the open-circuit voltage loss in devices made with amorphous polymers. Solar cells made with crystalline polymers do not show characteristic open circuit voltage losses, even though light-induced traps are also present in these devices. This indicates that crystalline materials are more resistant against the influence of traps on device performance. Recent work on crystalline materials has shown there is an energetic driving force for charge carriers to leave amorphous, mixed regions of bulk heterojunctions, and charges are dominantly transported in pure, ordered phases. This energetic landscape allows efficient charge generation as well as extraction and also may benefit the stability against light-induced traps. This journal is © the Partner Organisations 2014.

  14. Automated Voltage Control in LHCb

    CERN Document Server

    Granado Cardoso, L; Jacobsson, R

    2011-01-01

    LHCb is one of the 4 LHC experiments. In order to ensure the safety of the detector and to maximize efficiency, LHCb needs to coordinate its own operations, in particular the voltage configuration of the different subdetectors, according to the accelerator status. A control software has been developed for this purpose, based on the Finite State Machine toolkit and the SCADA system used for control throughout LHCb (and the other LHC experiments). This software permits to efficiently drive both the Low Voltage (LV) and High Voltage (HV) systems of the 10 different sub-detectors that constitute LHCb, setting each sub-system to the required voltage (easily configurable at run-time) based on the accelerator state. The control software is also responsible for monitoring the state of the Sub-detector voltages and adding it to the event data in the form of status-bits. Safe and yet flexible operation of the LHCb detector has been obtained and automatic actions, triggered by the state changes of the ...

  15. Magnetostrictive-piezoelectric magnetic sensor with current excitation

    CERN Document Server

    Prieto, J L; López, E; Sanchez, M C; Sanchez, P

    2000-01-01

    A new working configuration for magnetostrictive-piezoelectric magnetic sensors is presented. In this configuration, the excitation is caused using an electrical current flowing through the ferromagnetic sample and the induced signal is sensed in the piezoelectric support as an electrical voltage. This new idea allows a magnetic field detection without any coil and opens a possibility for a future miniaturisation of the sensor.

  16. Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Tyagi, Manisha [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Tomar, Monika [Physics department, Miranda House, University of Delhi, Delhi-110007 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

    2015-06-15

    Highlights: • p-NiO/n-ZnO heterojunction diode with enhanced junction parameters has been prepared. • Temperature dependent I–V throw insight into the involved conduction mechanism. • SCLC with exponential trap distribution was found to be the dominant mechanism. • C–V measurement at different frequencies support the presence of traps. - Abstract: The development of short-wavelength p–n junction is essentially important for the realization of transparent electronics for next-generation optoelectronic devices. In the present work, a p–n heterojunction diode based on p-NiO/n-ZnO has been prepared under the optimised growth conditions exhibiting improved electrical and junction parameters. The fabricated heterojunction gives typical current–voltage (I–V) characteristics with good rectifying behaviour (rectification ratio ≈ 10{sup 4} at 2 V). The temperature dependent current–voltage characteristics of heterojunction diode have been studied and origin of conduction mechanism is identified. The space-charge limited conduction with exponential trap distribution having deep level trap is found to be the dominant conduction mechanism in the fabricated p–n heterojunction diode. The conduction and valence band discontinuities for NiO/ZnO heterostructure have been determined from the capacitance–voltage (C–V) measurements.

  17. Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks.

    Science.gov (United States)

    Tang, Kechao; Palumbo, Felix Roberto; Zhang, Liangliang; Droopad, Ravi; McIntyre, Paul C

    2017-03-01

    We investigate the effects of pre- and postatomic layer deposition (ALD) defect passivation with hydrogen on the trap density and reliability of Al2O3/InGaAs gate stacks. Reliability is characterized by capacitance-voltage hysteresis measurements on samples prepared using different fabrication procedures and having different initial trap densities. Despite its beneficial capability to passivate both interface and border traps, a final forming gas (H2/N2) anneal (FGA) step is correlated with a significant hysteresis. This appears to be caused by hydrogen depassivation of defects in the gate stack under bias stress, supported by the observed bias stress-induced increase of interface trap density, and strong hydrogen isotope effects on the measured hysteresis. On the other hand, intentional air exposure of the InGaAs surface prior to Al2O3 ALD increases the initial interface trap density (Dit) but considerably lowers the hysteresis.

  18. Optimized Controller Design for a 12-Pulse Voltage Source Converter Based HVDC System

    Science.gov (United States)

    Agarwal, Ruchi; Singh, Sanjeev

    2017-08-01

    The paper proposes an optimized controller design scheme for power quality improvement in 12-pulse voltage source converter based high voltage direct current system. The proposed scheme is hybrid combination of golden section search and successive linear search method. The paper aims at reduction of current sensor and optimization of controller. The voltage and current controller parameters are selected for optimization due to its impact on power quality. The proposed algorithm for controller optimizes the objective function which is composed of current harmonic distortion, power factor, and DC voltage ripples. The detailed designs and modeling of the complete system are discussed and its simulation is carried out in MATLAB-Simulink environment. The obtained results are presented to demonstrate the effectiveness of the proposed scheme under different transient conditions such as load perturbation, non-linear load condition, voltage sag condition, and tapped load fault under one phase open condition at both points-of-common coupling.

  19. A Comparative Study of Ultra-Low Voltage Digital Circuit Design

    Directory of Open Access Journals (Sweden)

    Aaron Arthurs

    2012-07-01

    Full Text Available Ultra-low voltage digital circuit design is an active research area, especially for portable applications such as wearable electronics, intelligent remote sensors, implantable medical devices, and energy-harvesting systems. Due to their application scenarios and circuit components, two major goals for these systems are minimizing energy consumption and improving compatibility with low-voltage power supplies and analog components. The most effective solution to achieve these goals is to reduce the supply voltage, which,however, raises the issue of operability. At ultra-low supply voltages, the integrity of digital signals degrades dramatically due to the indifference between active and leakage currents. In addition, the system timing becomes more unpredictable as the impact of process and supply voltage variations being more significant at lower voltages. This paper presents a comparative study among three techniques for designing digital circuits operating at ultra-low voltages, i.e., Schmitt-triggered gate structure, delayinsensitive asynchronous logic, and Fully-Depleted Silicon-on-Insulator technology. Results show that despite the tradeoffs, all eight combinations of these techniques are viable for designing ultra-low voltage circuits. For a given application, the optimum circuit design can be selected from these combinations based on the lowest voltage, the dynamic range, the power budget, the performance requirement, and the available semiconductor process node.

  20. A Comparative Study of Ultra-Low Voltage Digital Circuit Design

    Directory of Open Access Journals (Sweden)

    Aaron Arthurs,

    2012-06-01

    Full Text Available Ultra-low voltage digital circuit design is an active research area, especially for portable applications such as wearable electronics, intelligent remote sensors, implantable medical devices, and energy-harvesting systems. Due to their application scenarios and circuit components, two major goals for these systems are minimizing energy consumption and improving compatibility with low-voltage power supplies and analog components. The most effective solution to achieve these goals is to reduce the supply voltage, which,however, raises the issue of operability. At ultra-low supply voltages, the integrity of digital signals degrades dramatically due to the indifference between active and leakage currents. In addition, the system timing becomes more unpredictable as the impact of process and supply voltage variations being more significant at lower voltages. This paper presents a comparative study among three techniques for designing digital circuits operating at ultra-low voltages, i.e., Schmitt-triggered gate structure, delay insensitive asynchronous logic, and Fully-Depleted Silicon-on-Insulator technology. Results show that despite the trade offs, all eight combinations of these techniques are viable for designing ultra-low voltage circuits. For a given application, the optimum circuit design can be selected from these combinations based on the lowest voltage, the dynamic range, the power budget, the performance requirement, and the available semiconductor process node.