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Sample records for voltage sensor trapping

  1. Intermediate state trapping of a voltage sensor

    DEFF Research Database (Denmark)

    Lacroix, Jérôme J; Pless, Stephan Alexander; Maragliano, Luca

    2012-01-01

    Voltage sensor domains (VSDs) regulate ion channels and enzymes by undergoing conformational changes depending on membrane electrical signals. The molecular mechanisms underlying the VSD transitions are not fully understood. Here, we show that some mutations of I241 in the S1 segment of the Shaker...... Kv channel positively shift the voltage dependence of the VSD movement and alter the functional coupling between VSD and pore domains. Among the I241 mutants, I241W immobilized the VSD movement during activation and deactivation, approximately halfway between the resting and active states......, and drastically shifted the voltage activation of the ionic conductance. This phenotype, which is consistent with a stabilization of an intermediate VSD conformation by the I241W mutation, was diminished by the charge-conserving R2K mutation but not by the charge-neutralizing R2Q mutation. Interestingly, most...

  2. Scorpion β-toxin interference with NaV channel voltage sensor gives rise to excitatory and depressant modes

    Science.gov (United States)

    Leipold, Enrico; Borges, Adolfo

    2012-01-01

    Scorpion β toxins, peptides of ∼70 residues, specifically target voltage-gated sodium (NaV) channels to cause use-dependent subthreshold channel openings via a voltage–sensor trapping mechanism. This excitatory action is often overlaid by a not yet understood depressant mode in which NaV channel activity is inhibited. Here, we analyzed these two modes of gating modification by β-toxin Tz1 from Tityus zulianus on heterologously expressed NaV1.4 and NaV1.5 channels using the whole cell patch-clamp method. Tz1 facilitated the opening of NaV1.4 in a use-dependent manner and inhibited channel opening with a reversed use dependence. In contrast, the opening of NaV1.5 was exclusively inhibited without noticeable use dependence. Using chimeras of NaV1.4 and NaV1.5 channels, we demonstrated that gating modification by Tz1 depends on the specific structure of the voltage sensor in domain 2. Although residue G658 in NaV1.4 promotes the use-dependent transitions between Tz1 modification phenotypes, the equivalent residue in NaV1.5, N803, abolishes them. Gating charge neutralizations in the NaV1.4 domain 2 voltage sensor identified arginine residues at positions 663 and 669 as crucial for the outward and inward movement of this sensor, respectively. Our data support a model in which Tz1 can stabilize two conformations of the domain 2 voltage sensor: a preactivated outward position leading to NaV channels that open at subthreshold potentials, and a deactivated inward position preventing channels from opening. The results are best explained by a two-state voltage–sensor trapping model in that bound scorpion β toxin slows the activation as well as the deactivation kinetics of the voltage sensor in domain 2. PMID:22450487

  3. Tarantula huwentoxin-IV inhibits neuronal sodium channels by binding to receptor site 4 and trapping the domain ii voltage sensor in the closed configuration.

    Science.gov (United States)

    Xiao, Yucheng; Bingham, Jon-Paul; Zhu, Weiguo; Moczydlowski, Edward; Liang, Songping; Cummins, Theodore R

    2008-10-03

    Peptide toxins with high affinity, divergent pharmacological functions, and isoform-specific selectivity are powerful tools for investigating the structure-function relationships of voltage-gated sodium channels (VGSCs). Although a number of interesting inhibitors have been reported from tarantula venoms, little is known about the mechanism for their interaction with VGSCs. We show that huwentoxin-IV (HWTX-IV), a 35-residue peptide from tarantula Ornithoctonus huwena venom, preferentially inhibits neuronal VGSC subtypes rNav1.2, rNav1.3, and hNav1.7 compared with muscle subtypes rNav1.4 and hNav1.5. Of the five VGSCs examined, hNav1.7 was most sensitive to HWTX-IV (IC(50) approximately 26 nM). Following application of 1 microm HWTX-IV, hNav1.7 currents could only be elicited with extreme depolarizations (>+100 mV). Recovery of hNav1.7 channels from HWTX-IV inhibition could be induced by extreme depolarizations or moderate depolarizations lasting several minutes. Site-directed mutagenesis analysis indicated that the toxin docked at neurotoxin receptor site 4 located at the extracellular S3-S4 linker of domain II. Mutations E818Q and D816N in hNav1.7 decreased toxin affinity for hNav1.7 by approximately 300-fold, whereas the reverse mutations in rNav1.4 (N655D/Q657E) and the corresponding mutations in hNav1.5 (R812D/S814E) greatly increased the sensitivity of the muscle VGSCs to HWTX-IV. Our data identify a novel mechanism for sodium channel inhibition by tarantula toxins involving binding to neurotoxin receptor site 4. In contrast to scorpion beta-toxins that trap the IIS4 voltage sensor in an outward configuration, we propose that HWTX-IV traps the voltage sensor of domain II in the inward, closed configuration.

  4. Gating transitions in the selectivity filter region of a sodium channel are coupled to the domain IV voltage sensor.

    Science.gov (United States)

    Capes, Deborah L; Arcisio-Miranda, Manoel; Jarecki, Brian W; French, Robert J; Chanda, Baron

    2012-02-14

    Voltage-dependent ion channels are crucial for generation and propagation of electrical activity in biological systems. The primary mechanism for voltage transduction in these proteins involves the movement of a voltage-sensing domain (D), which opens a gate located on the cytoplasmic side. A distinct conformational change in the selectivity filter near the extracellular side has been implicated in slow inactivation gating, which is important for spike frequency adaptation in neural circuits. However, it remains an open question whether gating transitions in the selectivity filter region are also actuated by voltage sensors. Here, we examine conformational coupling between each of the four voltage sensors and the outer pore of a eukaryotic voltage-dependent sodium channel. The voltage sensors of these sodium channels are not structurally symmetric and exhibit functional specialization. To track the conformational rearrangements of individual voltage-sensing domains, we recorded domain-specific gating pore currents. Our data show that, of the four voltage sensors, only the domain IV voltage sensor is coupled to the conformation of the selectivity filter region of the sodium channel. Trapping the outer pore in a particular conformation with a high-affinity toxin or disulphide crossbridge impedes the return of this voltage sensor to its resting conformation. Our findings directly establish that, in addition to the canonical electromechanical coupling between voltage sensor and inner pore gates of a sodium channel, gating transitions in the selectivity filter region are also coupled to the movement of a voltage sensor. Furthermore, our results also imply that the voltage sensor of domain IV is unique in this linkage and in the ability to initiate slow inactivation in sodium channels.

  5. Non-contact current and voltage sensor

    Science.gov (United States)

    Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

    2014-03-25

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  6. Capacitor Voltages Measurement and Balancing in Flying Capacitor Multilevel Converters Utilizing a Single Voltage Sensor

    DEFF Research Database (Denmark)

    Farivar, Glen; Ghias, Amer M. Y. M.; Hredzak, Branislav

    2017-01-01

    This paper proposes a new method for measuring capacitor voltages in multilevel flying capacitor (FC) converters that requires only one voltage sensor per phase leg. Multiple dc voltage sensors traditionally used to measure the capacitor voltages are replaced with a single voltage sensor at the ac...... side of the phase leg. The proposed method is subsequently used to balance the capacitor voltages using only the measured ac voltage. The operation of the proposed measurement and balancing method is independent of the number of the converter levels. Experimental results presented for a five-level FC...

  7. X-ray irradiation effects of interface traps and trapped-oxide charge at the Si-SiO{sub 2} interface of segmented silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kopsalis, Ioannis; Fretwurst, Eckhart; Garutti, Erika; Klanner, Robert; Schwandt, Joern [Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg (Germany)

    2016-07-01

    The surface radiation damage of SiO{sub 2} grown on high-ohmic Si, as used for the fabrication of segmented silicon sensors, has been investigated. Circular p- and n-MOSFETs, biased in accumulation and inversion at a field in the SiO{sub 2} of about 500 kV/cm, have been irradiated by X-rays up to a dose of about 17 kGy(SiO{sub 2}) in different irradiation steps. Before and after each irradiation, the gate voltage has been cycled from inversion to accumulation conditions and back, and from the dependence of the drain-source current, on gate voltage, the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO{sub 2} interface determined. From the threshold voltage, the effective oxide-charge density is calculated. Using the subthreshold-current technique the contribution of interface traps, in the lower and the upper part of the energy Si bandgap, and of fixed oxide-charge to the effective oxide-charge density has been estimated. Results on the dose dependence of the above quantities, the charging-up and discharging of border traps when changing the gate voltage, and the hole and electron mobilities at the Si-SiO{sub 2} interface are presented.

  8. Mobile trap algorithm for zinc detection using protein sensors

    International Nuclear Information System (INIS)

    Inamdar, Munish V.; Lastoskie, Christian M.; Fierke, Carol A.; Sastry, Ann Marie

    2007-01-01

    We present a mobile trap algorithm to sense zinc ions using protein-based sensors such as carbonic anhydrase (CA). Zinc is an essential biometal required for mammalian cellular functions although its intracellular concentration is reported to be very low. Protein-based sensors like CA molecules are employed to sense rare species like zinc ions. In this study, the zinc ions are mobile targets, which are sought by the mobile traps in the form of sensors. Particle motions are modeled using random walk along with the first passage technique for efficient simulations. The association reaction between sensors and ions is incorporated using a probability (p 1 ) upon an ion-sensor collision. The dissociation reaction of an ion-bound CA molecule is modeled using a second, independent probability (p 2 ). The results of the algorithm are verified against the traditional simulation techniques (e.g., Gillespie's algorithm). This study demonstrates that individual sensor molecules can be characterized using the probability pair (p 1 ,p 2 ), which, in turn, is linked to the system level chemical kinetic constants, k on and k off . Further investigations of CA-Zn reaction using the mobile trap algorithm show that when the diffusivity of zinc ions approaches that of sensor molecules, the reaction data obtained using the static trap assumption differ from the reaction data obtained using the mobile trap formulation. This study also reveals similar behavior when the sensor molecule has higher dissociation constant. In both the cases, the reaction data obtained using the static trap formulation reach equilibrium at a higher number of complex molecules (ion-bound sensor molecules) compared to the reaction data from the mobile trap formulation. With practical limitations on the number sensors that can be inserted/expressed in a cell and stochastic nature of the intracellular ionic concentrations, fluorescence from the number of complex sensor molecules at equilibrium will be the measure

  9. A novel tarantula toxin stabilizes the deactivated voltage sensor of bacterial sodium channel.

    Science.gov (United States)

    Tang, Cheng; Zhou, Xi; Nguyen, Phuong Tran; Zhang, Yunxiao; Hu, Zhaotun; Zhang, Changxin; Yarov-Yarovoy, Vladimir; DeCaen, Paul G; Liang, Songping; Liu, Zhonghua

    2017-07-01

    Voltage-gated sodium channels (Na V s) are activated by transiting the voltage sensor from the deactivated to the activated state. The crystal structures of several bacterial Na V s have captured the voltage sensor module (VSM) in an activated state, but structure of the deactivated voltage sensor remains elusive. In this study, we sought to identify peptide toxins stabilizing the deactivated VSM of bacterial Na V s. We screened fractions from several venoms and characterized a cystine knot toxin called JZTx-27 from the venom of tarantula Chilobrachys jingzhao as a high-affinity antagonist of the prokaryotic Na V s Ns V Ba (nonselective voltage-gated Bacillus alcalophilus ) and NaChBac (bacterial sodium channel from Bacillus halodurans ) (IC 50 = 112 nM and 30 nM, respectively). JZTx-27 was more efficacious at weaker depolarizing voltages and significantly slowed the activation but accelerated the deactivation of Ns V Ba, whereas the local anesthetic drug lidocaine was shown to antagonize Ns V Ba without affecting channel gating. Mutation analysis confirmed that JZTx-27 bound to S3-4 linker of Ns V Ba, with F98 being the critical residue in determining toxin affinity. All electrophysiological data and in silico analysis suggested that JZTx-27 trapped VSM of Ns V Ba in one of the deactivated states. In mammalian Na V s, JZTx-27 preferably inhibited the inactivation of Na V 1.5 by targeting the fourth transmembrane domain. To our knowledge, this is the first report of peptide antagonist for prokaryotic Na V s. More important, we proposed that JZTx-27 stabilized the Ns V Ba VSM in the deactivated state and may be used as a probe to determine the structure of the deactivated VSM of Na V s.-Tang, C., Zhou, X., Nguyen, P. T., Zhang, Y., Hu, Z., Zhang, C., Yarov-Yarovoy, V., DeCaen, P. G., Liang, S., Liu, Z. A novel tarantula toxin stabilizes the deactivated voltage sensor of bacterial sodium channel. © FASEB.

  10. CONTRIBUTIONS OF INTRACELLULAR IONS TO Kv CHANNEL VOLTAGE SENSOR DYNAMICS.

    Directory of Open Access Journals (Sweden)

    Samuel eGoodchild

    2012-06-01

    Full Text Available Voltage sensing domains of Kv channels control ionic conductance through coupling of the movement of charged residues in the S4 segment to conformational changes at the cytoplasmic region of the pore domain, that allow K+ ions to flow. Conformational transitions within the voltage sensing domain caused by changes in the applied voltage across the membrane field are coupled to the conducting pore region and the gating of ionic conductance. However, several other factors not directly linked to the voltage dependent movement of charged residues within the voltage sensor impact the dynamics of the voltage sensor, such as inactivation, ionic conductance, intracellular ion identity and block of the channel by intracellular ligands. The effect of intracellular ions on voltage sensor dynamics is of importance in the interpretation of gating current measurements and the physiology of pore/voltage sensor coupling. There is a significant amount of variability in the reported kinetics of voltage sensor deactivation kinetics of Kv channels attributed to different mechanisms such as open state stabilization, immobilization and relaxation processes of the voltage sensor. Here we separate these factors and focus on the causal role that intracellular ions can play in allosterically modulating the dynamics of Kv voltage sensor deactivation kinetics. These considerations are of critical importance in understanding the molecular determinants of the complete channel gating cycle from activation to deactivation.

  11. Design and Simulation Test of an Open D-Dot Voltage Sensor

    Directory of Open Access Journals (Sweden)

    Yunjie Bai

    2015-09-01

    Full Text Available Nowadays, sensor development focuses on miniaturization and non-contact measurement. According to the D-dot principle, a D-dot voltage sensor with a new structure was designed based on the differential D-dot sensor with a symmetrical structure, called an asymmetric open D-dot voltage sensor. It is easier to install. The electric field distribution of the sensor was analyzed through Ansoft Maxwell and an open D-dot voltage sensor was designed. This open D-voltage sensor is characteristic of accessible insulating strength and small electric field distortion. The steady and transient performance test under 10 kV-voltage reported satisfying performances of the designed open D-dot voltage sensor. It conforms to requirements for a smart grid measuring sensor in intelligence, miniaturization and facilitation.

  12. Engineering of a genetically encodable fluorescent voltage sensor exploiting fast Ci-VSP voltage-sensing movements.

    Science.gov (United States)

    Lundby, Alicia; Mutoh, Hiroki; Dimitrov, Dimitar; Akemann, Walther; Knöpfel, Thomas

    2008-06-25

    Ci-VSP contains a voltage-sensing domain (VSD) homologous to that of voltage-gated potassium channels. Using charge displacement ('gating' current) measurements we show that voltage-sensing movements of this VSD can occur within 1 ms in mammalian membranes. Our analysis lead to development of a genetically encodable fluorescent protein voltage sensor (VSFP) in which the fast, voltage-dependent conformational changes of the Ci-VSP voltage sensor are transduced to similarly fast fluorescence read-outs.

  13. On-site voltage measurement with capacitive sensors on high voltage systems

    NARCIS (Netherlands)

    Wu, L.; Wouters, P.A.A.F.; Heesch, van E.J.M.; Steennis, E.F.

    2011-01-01

    In Extra/High-Voltage (EHV/HV) power systems, over-voltages occur e.g. due to transients or resonances. At places where no conventional voltage measurement devices can be installed, on-site measurement of these occurrences requires preferably non intrusive sensors, which can be installed with little

  14. Engineering of a genetically encodable fluorescent voltage sensor exploiting fast Ci-VSP voltage-sensing movements.

    Directory of Open Access Journals (Sweden)

    Alicia Lundby

    2008-06-01

    Full Text Available Ci-VSP contains a voltage-sensing domain (VSD homologous to that of voltage-gated potassium channels. Using charge displacement ('gating' current measurements we show that voltage-sensing movements of this VSD can occur within 1 ms in mammalian membranes. Our analysis lead to development of a genetically encodable fluorescent protein voltage sensor (VSFP in which the fast, voltage-dependent conformational changes of the Ci-VSP voltage sensor are transduced to similarly fast fluorescence read-outs.

  15. Genetically encoded fluorescent voltage sensors using the voltage-sensing domain of Nematostella and Danio phosphatases exhibit fast kinetics.

    Science.gov (United States)

    Baker, Bradley J; Jin, Lei; Han, Zhou; Cohen, Lawrence B; Popovic, Marko; Platisa, Jelena; Pieribone, Vincent

    2012-07-15

    A substantial increase in the speed of the optical response of genetically encoded fluorescent protein voltage sensors (FP voltage sensors) was achieved by using the voltage-sensing phosphatase genes of Nematostella vectensis and Danio rerio. A potential N. vectensis voltage-sensing phosphatase was identified in silico. The voltage-sensing domain (S1-S4) of the N. vectensis homolog was used to create an FP voltage sensor called Nema. By replacing the phosphatase with a cerulean/citrine FRET pair, a new FP voltage sensor was synthesized with fast off kinetics (Tau(off)voltage-sensing phosphatase homolog, designated Zahra and Zahra 2, exhibited fast on and off kinetics within 2ms of the time constants observed with the organic voltage-sensitive dye, di4-ANEPPS. Mutagenesis of the S4 region of the Danio FP voltage sensor shifted the voltage dependence to more negative potentials but did not noticeably affect the kinetics of the optical signal. Copyright © 2012 Elsevier B.V. All rights reserved.

  16. Genetically-encoded fluorescent voltage sensors using the voltage-sensing domain of Nematostella and Danio phosphatases exhibit fast kinetics

    Science.gov (United States)

    Baker, Bradley J.; Jin, Lei; Han, Zhou; Cohen, Lawrence B.; Popovic, Marko; Platisa, Jelena; Pieribone, Vincent

    2012-01-01

    A substantial increase in the speed of the optical response of genetically-encoded Fluorescent Protein voltage sensors (FP voltage sensors) was achieved by using the voltage-sensing phosphatase genes of Nematostella vectensis and Danio rerio. A potential N. vectensis voltage-sensing phosphatase was identified in silico. The voltage-sensing domain (S1–S4) of the N. vectensis homolog was used to create an FP voltage sensor called Nema. By replacing the phosphatase with a cerulean/citrine FRET pair, a new FP voltage sensor was synthesized with fast off kinetics (Tauoff voltage-sensing phosphatase homolog, designated Zahra and Zahra 2, exhibited fast on and off kinetics within 2 msec of the time constants observed with the organic voltage-sensitive dye, di4-ANEPPS. Mutagenesis of the S4 region of the Danio FP voltage sensor shifted the voltage dependence to more negative potentials but did not noticeably affect the kinetics of the optical signal. PMID:22634212

  17. An optical fiber Bragg grating and piezoelectric ceramic voltage sensor

    Science.gov (United States)

    Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

    2017-10-01

    Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

  18. An optical fiber Bragg grating and piezoelectric ceramic voltage sensor.

    Science.gov (United States)

    Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

    2017-10-01

    Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

  19. Optical sensors for the measurement of electric current and voltage

    Energy Technology Data Exchange (ETDEWEB)

    Rutgers, W R; Hulshof, H J.M.; Laurensse, I J; van der Wey, A H

    1987-01-01

    Optical sensors for the measurement of electrical current and voltage were developed for application in electric power systems. The current sensor, based on the Faraday effect in a monomode glass fiber, and the voltage sensor, based on the transverse Pockels effect in a crystal, are demonstrated in wide-band (10 MHz) interference-free measurements of pulsed currents and impulse voltages.

  20. Bio-Inspired Carbon Monoxide Sensors with Voltage-Activated Sensitivity

    KAUST Repository

    Savagatrup, Suchol

    2017-09-27

    Carbon monoxide (CO) outcompetes oxygen when binding to the iron center of hemeproteins, leading to a reduction in blood oxygen level and acute poisoning. Harvesting the strong specific interaction between CO and the iron porphyrin provides a highly selective and customizable sensor. We report the development of chemiresistive sensors with voltage-activated sensitivity for the detection of CO comprising iron porphyrin and functionalized single-walled carbon nanotubes (F-SWCNTs). Modulation of the gate voltage offers a predicted extra dimension for sensing. Specifically, the sensors show a significant increase in sensitivity toward CO when negative gate voltage is applied. The dosimetric sensors are selective to ppm levels of CO and functional in air. UV/Vis spectroscopy, differential pulse voltammetry, and density functional theory reveal that the in situ reduction of FeIII to FeII enhances the interaction between the F-SWCNTs and CO. Our results illustrate a new mode of sensors wherein redox active recognition units are voltage-activated to give enhanced and highly specific responses.

  1. Low voltage stress-induced leakage current and traps in ultrathin oxide (1.2 2.5 nm) after constant voltage stresses

    Science.gov (United States)

    Petit, C.; Zander, D.

    2007-10-01

    It has been shown that the low voltage gate current in ultrathin oxide metal-oxide-semiconductor devices is very sensitive to electrical stresses. Therefore, it can be used as a reliability monitor when the oxide thickness becomes too small for traditional electrical measurements to be used. In this work, we present a study on n-MOSCAP devices at negative gate bias in the direct tunneling (DT) regime. If the low voltage stress-induced leakage current (LVSILC) depends strongly on the low sense voltages, it also depends strongly on the stress voltage magnitude. We show that two LVSILC peaks appear as a function of the sense voltage in the LVSILC region and that their magnitude, one compared to the other, depends strongly on the stress voltage magnitude. One is larger than the other at low stress voltage and smaller at high stress voltage. From our experimental results, different conduction mechanisms are analyzed. To explain LVSILC variations, we propose a model of the conduction through the ultrathin gate oxide based on two distinctly different trap-assisted tunneling mechanisms: inelastic of gate electron (INE) and trap-assisted electron (ETAT).

  2. Bio-Inspired Carbon Monoxide Sensors with Voltage-Activated Sensitivity

    KAUST Repository

    Savagatrup, Suchol; Schroeder, Vera; He, Xin; Lin, Sibo; He, Maggie; Yassine, Omar; Salama, Khaled N.; Zhang, Xixiang; Swager, Timothy M.

    2017-01-01

    voltage offers a predicted extra dimension for sensing. Specifically, the sensors show a significant increase in sensitivity toward CO when negative gate voltage is applied. The dosimetric sensors are selective to ppm levels of CO and functional in air. UV

  3. High-voltage pixel sensors for ATLAS upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Perić, I., E-mail: ivan.peric@ziti.uni-heidelberg.de [Heidelberg University, Institute of Computer Engineering, Mannheim (Germany); Kreidl, C.; Fischer, P. [Heidelberg University, Institute of Computer Engineering, Mannheim (Germany); Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M. [CPPM, Marseille (France); Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B. [CERN, Geneve (Switzerland); Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A. [University of Geneve (Switzerland); and others

    2014-11-21

    The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

  4. MOS Capacitance—Voltage Characteristics III. Trapping Capacitance from 2-Charge-State Impurities

    International Nuclear Information System (INIS)

    Jie Binbin; Sah Chihtang

    2011-01-01

    Low-frequency and high-frequency capacitance—voltage curves of Metal—Oxide—Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier, or one-energy-level impurity species. Models described include a donor electron trap and an acceptor hole trap, both donors, both acceptors, both shallow energy levels, both deep, one shallow and one deep, and the identical donor and acceptor. Device and material parameters are selected to simulate chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications. (invited papers)

  5. Two separate interfaces between the voltage sensor and pore are required for the function of voltage-dependent K(+ channels.

    Directory of Open Access Journals (Sweden)

    Seok-Yong Lee

    2009-03-01

    Full Text Available Voltage-dependent K(+ (Kv channels gate open in response to the membrane voltage. To further our understanding of how cell membrane voltage regulates the opening of a Kv channel, we have studied the protein interfaces that attach the voltage-sensor domains to the pore. In the crystal structure, three physical interfaces exist. Only two of these consist of amino acids that are co-evolved across the interface between voltage sensor and pore according to statistical coupling analysis of 360 Kv channel sequences. A first co-evolved interface is formed by the S4-S5 linkers (one from each of four voltage sensors, which form a cuff surrounding the S6-lined pore opening at the intracellular surface. The crystal structure and published mutational studies support the hypothesis that the S4-S5 linkers convert voltage-sensor motions directly into gate opening and closing. A second co-evolved interface forms a small contact surface between S1 of the voltage sensor and the pore helix near the extracellular surface. We demonstrate through mutagenesis that this interface is necessary for the function and/or structure of two different Kv channels. This second interface is well positioned to act as a second anchor point between the voltage sensor and the pore, thus allowing efficient transmission of conformational changes to the pore's gate.

  6. Common molecular determinants of tarantula huwentoxin-IV inhibition of Na+ channel voltage sensors in domains II and IV.

    Science.gov (United States)

    Xiao, Yucheng; Jackson, James O; Liang, Songping; Cummins, Theodore R

    2011-08-05

    The voltage sensors of domains II and IV of sodium channels are important determinants of activation and inactivation, respectively. Animal toxins that alter electrophysiological excitability of muscles and neurons often modify sodium channel activation by selectively interacting with domain II and inactivation by selectively interacting with domain IV. This suggests that there may be substantial differences between the toxin-binding sites in these two important domains. Here we explore the ability of the tarantula huwentoxin-IV (HWTX-IV) to inhibit the activity of the domain II and IV voltage sensors. HWTX-IV is specific for domain II, and we identify five residues in the S1-S2 (Glu-753) and S3-S4 (Glu-811, Leu-814, Asp-816, and Glu-818) regions of domain II that are crucial for inhibition of activation by HWTX-IV. These data indicate that a single residue in the S3-S4 linker (Glu-818 in hNav1.7) is crucial for allowing HWTX-IV to interact with the other key residues and trap the voltage sensor in the closed configuration. Mutagenesis analysis indicates that the five corresponding residues in domain IV are all critical for endowing HWTX-IV with the ability to inhibit fast inactivation. Our data suggest that the toxin-binding motif in domain II is conserved in domain IV. Increasing our understanding of the molecular determinants of toxin interactions with voltage-gated sodium channels may permit development of enhanced isoform-specific voltage-gating modifiers.

  7. Direct Interaction between the Voltage Sensors Produces Cooperative Sustained Deactivation in Voltage-gated H+ Channel Dimers*

    OpenAIRE

    Okuda, Hiroko; Yonezawa, Yasushige; Takano, Yu; Okamura, Yasushi; Fujiwara, Yuichiro

    2016-01-01

    The voltage-gated H+ channel (Hv) is a voltage sensor domain-like protein consisting of four transmembrane segments (S1?S4). The native Hv structure is a homodimer, with the two channel subunits functioning cooperatively. Here we show that the two voltage sensor S4 helices within the dimer directly cooperate via a ?-stacking interaction between Trp residues at the middle of each segment. Scanning mutagenesis showed that Trp situated around the original position provides the slow gating kineti...

  8. Time varying voltage combustion control and diagnostics sensor

    Science.gov (United States)

    Chorpening, Benjamin T [Morgantown, WV; Thornton, Jimmy D [Morgantown, WV; Huckaby, E David [Morgantown, WV; Fincham, William [Fairmont, WV

    2011-04-19

    A time-varying voltage is applied to an electrode, or a pair of electrodes, of a sensor installed in a fuel nozzle disposed adjacent the combustion zone of a continuous combustion system, such as of the gas turbine engine type. The time-varying voltage induces a time-varying current in the flame which is measured and used to determine flame capacitance using AC electrical circuit analysis. Flame capacitance is used to accurately determine the position of the flame from the sensor and the fuel/air ratio. The fuel and/or air flow rate (s) is/are then adjusted to provide reduced flame instability problems such as flashback, combustion dynamics and lean blowout, as well as reduced emissions. The time-varying voltage may be an alternating voltage and the time-varying current may be an alternating current.

  9. An automatic method to analyze the Capacity-Voltage and Current-Voltage curves of a sensor

    CERN Document Server

    AUTHOR|(CDS)2261553

    2017-01-01

    An automatic method to perform Capacity versus voltage analysis for all kind of silicon sensor is provided. It successfully calculates the depletion voltage to unirradiated and irradiated sensors, and with measurements with outliers or reaching breakdown. It is built using C++ and using ROOT trees with an analogous skeleton as TRICS, where the data as well as the results of the ts are saved, to make further analysis.

  10. Imaging Voltage in Genetically Defined Neuronal Subpopulations with a Cre Recombinase-Targeted Hybrid Voltage Sensor.

    Science.gov (United States)

    Bayguinov, Peter O; Ma, Yihe; Gao, Yu; Zhao, Xinyu; Jackson, Meyer B

    2017-09-20

    Genetically encoded voltage indicators create an opportunity to monitor electrical activity in defined sets of neurons as they participate in the complex patterns of coordinated electrical activity that underlie nervous system function. Taking full advantage of genetically encoded voltage indicators requires a generalized strategy for targeting the probe to genetically defined populations of cells. To this end, we have generated a mouse line with an optimized hybrid voltage sensor (hVOS) probe within a locus designed for efficient Cre recombinase-dependent expression. Crossing this mouse with Cre drivers generated double transgenics expressing hVOS probe in GABAergic, parvalbumin, and calretinin interneurons, as well as hilar mossy cells, new adult-born neurons, and recently active neurons. In each case, imaging in brain slices from male or female animals revealed electrically evoked optical signals from multiple individual neurons in single trials. These imaging experiments revealed action potentials, dynamic aspects of dendritic integration, and trial-to-trial fluctuations in response latency. The rapid time response of hVOS imaging revealed action potentials with high temporal fidelity, and enabled accurate measurements of spike half-widths characteristic of each cell type. Simultaneous recording of rapid voltage changes in multiple neurons with a common genetic signature offers a powerful approach to the study of neural circuit function and the investigation of how neural networks encode, process, and store information. SIGNIFICANCE STATEMENT Genetically encoded voltage indicators hold great promise in the study of neural circuitry, but realizing their full potential depends on targeting the sensor to distinct cell types. Here we present a new mouse line that expresses a hybrid optical voltage sensor under the control of Cre recombinase. Crossing this line with Cre drivers generated double-transgenic mice, which express this sensor in targeted cell types. In

  11. A Coloured Spin Trap which works as a pH Sensor

    African Journals Online (AJOL)

    NJD

    Synthesis; free radical; spin-trapping; pH sensor; nitrone. 1. Introduction. There is a contemporary interest in ... easily used as sensors and markers in free radical chemistry.11 On the other hand, a coloured spin trap may .... methanol mixture, were as follows: for compound 6, at acidic. pH, the colour is yellow with λmax = 390 ...

  12. The tarantula toxins ProTx-II and huwentoxin-IV differentially interact with human Nav1.7 voltage sensors to inhibit channel activation and inactivation.

    Science.gov (United States)

    Xiao, Yucheng; Blumenthal, Kenneth; Jackson, James O; Liang, Songping; Cummins, Theodore R

    2010-12-01

    The voltage-gated sodium channel Na(v)1.7 plays a crucial role in pain, and drugs that inhibit hNa(v)1.7 may have tremendous therapeutic potential. ProTx-II and huwentoxin-IV (HWTX-IV), cystine knot peptides from tarantula venoms, preferentially block hNa(v)1.7. Understanding the interactions of these toxins with sodium channels could aid the development of novel pain therapeutics. Whereas both ProTx-II and HWTX-IV have been proposed to preferentially block hNa(v)1.7 activation by trapping the domain II voltage-sensor in the resting configuration, we show that specific residues in the voltage-sensor paddle of domain II play substantially different roles in determining the affinities of these toxins to hNa(v)1.7. The mutation E818C increases ProTx-II's and HWTX-IV's IC(50) for block of hNa(v)1.7 currents by 4- and 400-fold, respectively. In contrast, the mutation F813G decreases ProTx-II affinity by 9-fold but has no effect on HWTX-IV affinity. It is noteworthy that we also show that ProTx-II, but not HWTX-IV, preferentially interacts with hNa(v)1.7 to impede fast inactivation by trapping the domain IV voltage-sensor in the resting configuration. Mutations E1589Q and T1590K in domain IV each decreased ProTx-II's IC(50) for impairment of fast inactivation by ~6-fold. In contrast mutations D1586A and F1592A in domain-IV increased ProTx-II's IC(50) for impairment of fast inactivation by ~4-fold. Our results show that whereas ProTx-II and HWTX-IV binding determinants on domain-II may overlap, domain II plays a much more crucial role for HWTX-IV, and contrary to what has been proposed to be a guiding principle of sodium channel pharmacology, molecules do not have to exclusively target the domain IV voltage-sensor to influence sodium channel inactivation.

  13. Influence of modulation method on using LC-traps with single-phase voltage source converters

    DEFF Research Database (Denmark)

    Wang, Xiongfei; Min, Huang; Bai, Haofeng

    2015-01-01

    The switching-frequency LC-trap filter has recently been employed with high-order passive filters for Voltage Source Inverters (VSIs). This paper investigates the influence of modulation method on using the LC-traps with single-phase VSIs. Two-level (bipolar) and three-level (unipolar) modulations...... that include phase distortion and alternative phase opposition distortion methods are analyzed. Harmonic filtering performances of four LC-trap-based filters with different locations of LC-traps are compared. It is shown that the use of parallel-LC-traps in series with filter inductors, either grid...... or converter side, has a worse harmonic filtering performance than using series-LC-trap in the shunt branch. Simulations and experimental results are presented for verifications....

  14. Determination of the aging offset voltage of AMR sensors based on accelerated degradation test

    NARCIS (Netherlands)

    Zambrano Constantini, A.C.; Kerkhoff, Hans G.

    Usually Anisotropic Magnetoresistance angle sensors are configured with two Wheatstone bridges, but an undesirable offset voltage included in the sensor output affects its accuracy. The total offset voltage combines a voltage due to resistance mismatches during manufacturing and a voltage from

  15. Study and Experiment on Non-Contact Voltage Sensor Suitable for Three-Phase Transmission Line.

    Science.gov (United States)

    Zhou, Qiang; He, Wei; Xiao, Dongping; Li, Songnong; Zhou, Kongjun

    2015-12-30

    A voltage transformer, as voltage signal detection equipment, plays an important role in a power system. Presently, more and more electric power systems are adopting potential transformer and capacitance voltage transformers. Transformers are often large in volume and heavyweight, their insulation design is difficult, and an iron core or multi-grade capacitance voltage division structure is generally adopted. As a result, the detection accuracy of transformer is reduced, a huge phase difference exists between detection signal and voltage signal to be measured, and the detection signal cannot accurately and timely reflect the change of conductor voltage signal to be measured. By aiming at the current problems of electric transformation, based on electrostatic induction principle, this paper designed a non-contact voltage sensor and gained detection signal of the sensor through electrostatic coupling for the electric field generated by electric charges of the conductor to be measured. The insulation structure design of the sensor is simple and its volume is small; phase difference of sensor measurement is effectively reduced through optimization design of the electrode; and voltage division ratio and measurement accuracy are increased. The voltage sensor was tested on the experimental platform of simulating three-phase transmission line. According to the result, the designed non-contact voltage sensor can realize accurate and real-time measurement for the conductor voltage. It can be applied to online monitoring for the voltage of three-phase transmission line or three-phase distribution network line, which is in accordance with the development direction of the smart grid.

  16. Theoretical analysis of magnetic sensor output voltage

    International Nuclear Information System (INIS)

    Liu Haishun; Dun Chaochao; Dou Linming; Yang Weiming

    2011-01-01

    The output voltage is an important parameter to determine the stress state in magnetic stress measurement, the relationship between the output voltage and the difference in the principal stresses was investigated by a comprehensive application of magnetic circuit theory, magnetization theory, stress analysis as well as the law of electromagnetic induction, and a corresponding quantitative equation was derived. It is drawn that the output voltage is proportional to the difference in the principal stresses, and related to the angle between the principal stress and the direction of the sensor. This investigation provides a theoretical basis for the principle stresses measurement by output voltage. - Research highlights: → A comprehensive investigation of magnetic stress signal. → Derived a quantitative equation about output voltage and the principal stresses. → The output voltage is proportional to the difference of the principal stresses. → Provide a theoretical basis for the principle stresses measurement.

  17. Design considerations for TES and QET sensors

    International Nuclear Information System (INIS)

    Cabrera, B.

    2000-01-01

    We summarize some of the effects that must be taken into account in the design of superconducting Transition Edge Sensors (TES) and Quasiparticle-trap-assisted Electrothermal-feedback Transition-edge-sensors (QET). For the TES these include determining time constants, maintaining voltage bias, avoid electrothermal oscillations, critical current limitations, and saturation. For QET phonon sensors, voltage bias was conceived to allow the simultaneous biasing of parallel TESs with different transition temperatures, and preventing normal-superconducting phase separation

  18. Dynamics of charge carrier trapping in NO 2 sensors based on ZnO field-effect transistors

    NARCIS (Netherlands)

    Andringa, A.-M.; Vlietstra, N.; Smits, E.C.P.; Spijkman, M.-J.; Gomes, H.L.; Klootwijk, J.H.; Blom, P.W.M.; Leeuw, D.M. de

    2012-01-01

    Nitrogen dioxide (NO 2) detection with ZnO field-effect transistors is based on charge carrier trapping. Here we investigate the dynamics of charge trapping and recovery as a function of temperature by monitoring the threshold voltage shift. The threshold voltage shifts follow a

  19. High Voltage Coil Current Sensor for DC-DC Converters Employing DDCC

    Directory of Open Access Journals (Sweden)

    M. Drinovsky

    2015-12-01

    Full Text Available Current sensor is an integral part of every switching converter. It is used for over-current protection, regulation and in case of multiphase converters for balancing. A new high voltage current sensor for coil-based current sensing in DC-DC converters is presented. The sensor employs DDCC with high voltage input stage and gain trimming. The circuit has been simulated and implemented in 0.35 um BCD technology as part of a multiphase DC-DC converter where its function has been verified. The circuit is able to sustain common mode voltage on the input up to 40 V, it occupies 0.387*0.345 mm2 and consumes 3.2 mW typically.

  20. Non-contact current and voltage sensor having detachable housing incorporating multiple ferrite cylinder portions

    Science.gov (United States)

    Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C.; Schappert, Michael A.

    2016-04-26

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing formed from two portions that mechanically close around the wire and that contain the current and voltage sensors. The current sensor is a ferrite cylinder formed from at least three portions that form the cylinder when the sensor is closed around the wire with a hall effect sensor disposed in a gap between two of the ferrite portions along the circumference to measure current. A capacitive plate or wire is disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  1. MOS Capacitance—Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations

    International Nuclear Information System (INIS)

    Jie Binbin; Sah Chihtang

    2011-01-01

    Low-frequency and high-frequency Capacitance—Voltage (C—V) curves of Metal—Oxide—Semiconductor Capacitors (MOSC), including electron and hole trapping at the dopant donor and acceptor impurities, are presented to illustrate giant trapping capacitances, from > 0.01C OX to > 10C OX . Five device and materials parameters are varied for fundamental trapping parameter characterization, and electrical and optical signal processing applications. Parameters include spatially constant concentration of the dopant-donor-impurity electron trap, N DD , the ground state electron trapping energy level depth measured from the conduction band edge, E C –E D , the degeneracy of the trapped electron at the ground state, g D , the device temperature, T, and the gate oxide thickness, x OX . (invited papers)

  2. Low Power/Low Voltage Interface Circuitry for Capacitive Sensors

    DEFF Research Database (Denmark)

    Furst, Claus Efdmann

    This thesis focuses mainly on low power/low voltage interface circuits, implemented in CMOS, for capacitive sensors. A brief discussion of demands and possibilities for analog signal processing in the future is presented. Techniques for low power design is presented. This is done by analyzing power...... power consumption. It is shown that the Sigma-Delta modulator is advantageous when embedded in a feedback loop with a mechanical sensor. Here a micro mechanical capacitive microphone. Feedback and detection circuitry for a capacitive microphone is presented. Practical implementations of low power....../low voltage interface circuitry is presented. It is demonstrated that an amplifier optimized for a capacitive microphone implemented in a standard 0.7 micron CMOS technology competes well with a traditional JFET amplifier. Furthermore a low power/low voltage 3rd order Sigma-Delta modulator is presented...

  3. Trap Healing for High-Performance Low-Voltage Polymer Transistors and Solution-Based Analog Amplifiers on Foil.

    Science.gov (United States)

    Pecunia, Vincenzo; Nikolka, Mark; Sou, Antony; Nasrallah, Iyad; Amin, Atefeh Y; McCulloch, Iain; Sirringhaus, Henning

    2017-06-01

    Solution-processed semiconductors such as conjugated polymers have great potential in large-area electronics. While extremely appealing due to their low-temperature and high-throughput deposition methods, their integration in high-performance circuits has been difficult. An important remaining challenge is the achievement of low-voltage circuit operation. The present study focuses on state-of-the-art polymer thin-film transistors based on poly(indacenodithiophene-benzothiadiazole) and shows that the general paradigm for low-voltage operation via an enhanced gate-to-channel capacitive coupling is unable to deliver high-performance device behavior. The order-of-magnitude longitudinal-field reduction demanded by low-voltage operation plays a fundamental role, enabling bulk trapping and leading to compromised contact properties. A trap-reduction technique based on small molecule additives, however, is capable of overcoming this effect, allowing low-voltage high-mobility operation. This approach is readily applicable to low-voltage circuit integration, as this work exemplifies by demonstrating high-performance analog differential amplifiers operating at a battery-compatible power supply voltage of 5 V with power dissipation of 11 µW, and attaining a voltage gain above 60 dB at a power supply voltage below 8 V. These findings constitute an important milestone in realizing low-voltage polymer transistors for solution-based analog electronics that meets performance and power-dissipation requirements for a range of battery-powered smart-sensing applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps

    Science.gov (United States)

    Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Shimizu, Mitsuaki; Hashizume, Tamotsu

    2018-04-01

    In this study, GaN MOS capacitance-voltage device simulations considering various interface and bulk traps are performed in the transient mode. The simulations explain various features of capacitance-voltage curves, such as plateau, hysteresis, and frequency dispersions, which are commonly observed in measurements of GaN MOS capacitors and arise from complicated combinations of interface and bulk deep-level traps. The objective of the present study is to provide a good theoretical tool to understand the physics of various nonideal measured curves.

  5. Contributions of counter-charge in a potassium channel voltage-sensor domain

    DEFF Research Database (Denmark)

    Pless, Stephan Alexander; Galpin, Jason D; Niciforovic, Ana P

    2011-01-01

    Voltage-sensor domains couple membrane potential to conformational changes in voltage-gated ion channels and phosphatases. Highly coevolved acidic and aromatic side chains assist the transfer of cationic side chains across the transmembrane electric field during voltage sensing. We investigated...... the functional contribution of negative electrostatic potentials from these residues to channel gating and voltage sensing with unnatural amino acid mutagenesis, electrophysiology, voltage-clamp fluorometry and ab initio calculations. The data show that neutralization of two conserved acidic side chains...

  6. Developing Fast Fluorescent Protein Voltage Sensors by Optimizing FRET Interactions.

    Directory of Open Access Journals (Sweden)

    Uhna Sung

    Full Text Available FRET (Förster Resonance Energy Transfer-based protein voltage sensors can be useful for monitoring neuronal activity in vivo because the ratio of signals between the donor and acceptor pair reduces common sources of noise such as heart beat artifacts. We improved the performance of FRET based genetically encoded Fluorescent Protein (FP voltage sensors by optimizing the location of donor and acceptor FPs flanking the voltage sensitive domain of the Ciona intestinalis voltage sensitive phosphatase. First, we created 39 different "Nabi1" constructs by positioning the donor FP, UKG, at 8 different locations downstream of the voltage-sensing domain and the acceptor FP, mKO, at 6 positions upstream. Several of these combinations resulted in large voltage dependent signals and relatively fast kinetics. Nabi1 probes responded with signal size up to 11% ΔF/F for a 100 mV depolarization and fast response time constants both for signal activation (~2 ms and signal decay (~3 ms. We improved expression in neuronal cells by replacing the mKO and UKG FRET pair with Clover (donor FP and mRuby2 (acceptor FP to create Nabi2 probes. Nabi2 probes also had large signals and relatively fast time constants in HEK293 cells. In primary neuronal culture, a Nabi2 probe was able to differentiate individual action potentials at 45 Hz.

  7. Trapped Ion Oscillation Frequencies as Sensors for Spectroscopy

    Directory of Open Access Journals (Sweden)

    Wilfried Nörtershäuser

    2010-03-01

    Full Text Available The oscillation frequencies of charged particles in a Penning trap can serve as sensors for spectroscopy when additional field components are introduced to the magnetic and electric fields used for confinement. The presence of so-called “magnetic bottles” and specific electric anharmonicities creates calculable energy-dependences of the oscillation frequencies in the radiofrequency domain which may be used to detect the absorption or emission of photons both in the microwave and optical frequency domains. The precise electronic measurement of these oscillation frequencies therefore represents an optical sensor for spectroscopy. We discuss possible applications for precision laser and microwave spectroscopy and their role in the determination of magnetic moments and excited state lifetimes. Also, the trap-assisted measurement of radiative nuclear de-excitations in the X-ray domain is discussed. This way, the different applications range over more than 12 orders of magnitude in the detectable photon energies, from below μeV in the microwave domain to beyond MeV in the X-ray domain.

  8. ''SensArray'' voltage sensor analysis in an inductively coupled plasma

    International Nuclear Information System (INIS)

    Titus, M. J.; Hsu, C. C.; Graves, D. B.

    2010-01-01

    A commercially manufactured PlasmaVolt sensor wafer was studied in an inductively coupled plasma reactor in an effort to validate sensor measurements. A pure Ar plasma at various powers (25-420 W), for a range of pressures (10-80 mT), and bias voltages (0-250 V) was utilized. A numerical sheath simulation was simultaneously developed in order to interpret experimental results. It was found that PlasmaVolt sensor measurements are proportional to the rf-current through the sheath. Under conditions such that the sheath impedance is dominantly capacitive, sensor measurements follow a scaling law derived from the inhomogeneous sheath model of Lieberman and Lichtenberg, [Principles of Plasma Discharges and Materials Processing (Wiley, New York, 2005)]. Under these conditions, sensor measurements are proportional to the square root of the plasma density at the plasma-sheath interface, the one-fourth root of the electron temperature, and the one-fourth root of the rf bias voltage. When the sheath impedance becomes increasingly resistive, the sensor measurements deviate from the scaling law and tend to be directly proportional to the plasma density. The measurements and numerical sheath simulation demonstrate the scaling behavior as a function of changing sheath impedance for various plasma conditions.

  9. High-voltage switching for in-flight capture of keV antiprotons in a Penning trap

    International Nuclear Information System (INIS)

    Fei, X.; Davisson, R.; Gabrielse, G.

    1987-01-01

    The recently observed in-flight capture of keV antiprotons and protons in a Penning trap requires that the -3-kV potentials on electrodes of a Penning trap near 4.2 K be switched on and off with switching times less than 20 ns. These rapidly switched potentials are applied via transmission lines which are not terminated at the trap, thereby avoiding unacceptable heat load on the helium Dewar. Simple high-voltage switching circuits are constructed using krytrons and reed relays. A krytron provides the rapid switching and stays on just long enough for a reed relay to kick in and maintain the switched state indefinitely

  10. A Series-LC-Filtered Active Trap Filter for High Power Voltage Source Inverter

    DEFF Research Database (Denmark)

    Bai, Haofeng; Wang, Xiongfei; Loh, Poh Chiang

    2016-01-01

    Passive trap filters are widely used in high power Voltage Source Inverters (VSI) for the switching harmonic attenuation. The usage of the passive trap filters requires clustered and fixed switching harmonic spectrum, which is not the case for low pulse-ratio or Variable Switching Frequency (VSF...... current control of the auxiliary converter, which can be challenging considering that the switching harmonics have very high orders. In this paper, an Active Trap Filter (ATF) based on output impedance shaping is proposed. It is able to bypass the switching harmonics by providing nearly zero output...... impedance. A series-LC-filter is used to reduce the power rating and synthesize the desired output impedance of the ATF. Compared with the existing approaches, the compensated frequency range is greatly enlarged. Also, the current reference is simply set to zero, which reduces the complexity of the control...

  11. A Fiber-Optic Sensor for Acoustic Emission Detection in a High Voltage Cable System

    Science.gov (United States)

    Zhang, Tongzhi; Pang, Fufei; Liu, Huanhuan; Cheng, Jiajing; Lv, Longbao; Zhang, Xiaobei; Chen, Na; Wang, Tingyun

    2016-01-01

    We have proposed and demonstrated a Michelson interferometer-based fiber sensor for detecting acoustic emission generated from the partial discharge (PD) of the accessories of a high-voltage cable system. The developed sensor head is integrated with a compact and relatively high sensitivity cylindrical elastomer. Such a sensor has a broadband frequency response and a relatively high sensitivity in a harsh environment under a high-voltage electric field. The design and fabrication of the sensor head integrated with the cylindrical elastomer is described, and a series of experiments was conducted to evaluate the sensing performance. The experimental results demonstrate that the sensitivity of our developed sensor for acoustic detection of partial discharges is 1.7 rad/(m⋅Pa). A high frequency response up to 150 kHz is achieved. Moreover, the relatively high sensitivity for the detection of PD is verified in both the laboratory environment and gas insulated switchgear. The obtained results show the great potential application of a Michelson interferometer-based fiber sensor integrated with a cylindrical elastomer for in-situ monitoring high-voltage cable accessories for safety work. PMID:27916900

  12. Ozone Sensor for Application in Medium Voltage Switchboard

    Directory of Open Access Journals (Sweden)

    Letizia De Maria

    2009-01-01

    Full Text Available The application of a new spectroscopic type fiber sensor for ozone detection in electrical components of Medium Voltage (MV network is evaluated. The sensor layout is based on the use of an optical retroreflector, to improve the detection sensitivity, and it was especially designed for detecting in situ rapid changes of ozone concentration. Preliminary tests were performed in a typical MV switchboard. Artificial defects simulated predischarge phenomena arising during real operating conditions. Results are discussed by a comparison with data simultaneously acquired with a standard partial discharge system.

  13. Active damping of LLCL-filter resonance based on LC-trap voltage and capacitor current feedback

    DEFF Research Database (Denmark)

    Huang, Min; Wang, Xiongfei; Loh, Poh Chiang

    2015-01-01

    . In this paper, different feedback coefficients like the proportional, derivative, integral, high pass and low pass feedback coefficients of the filter capacitor current and the LC-trap circuit voltage are investigated for damping the filter resonance. Active damping methods are analyzed by using the concept...

  14. A half-ring GMR sensor for detection of magnetic beads immobilized on a circular micro-trap

    KAUST Repository

    Gooneratne, Chinthaka Pasan

    2011-11-01

    Utilizing magnetic principles in biological immunoassays is an attractive option given its ability to remotely and non-invasively manipulate and detect cells tagged with micro/nano size superparamagnetic type beads and due to the fact that even the most complex biological immunoassays will have very little magnetic effect. The presence of magnetic beads can be detected by a magnetic sensor which quantifies the amount of target cells present in the immunoassay. In order to increase the detection rate a circular conducting micro-trap is employed to attract, trap and transport the magnetic beads to the sensing area. In this research we propose a half-ring spin valve type giant magnetoresistance (GMR) sensor for the measurement of stray fields produced by 2 μm magnetic beads which are around the circular micro-trap. A couple of half-ring GMR sensors can be used to cover the entire circular border width, in order to detect the majority of the immobilized magnetic beads. Analytical and numerical analysis leading towards the fabrication of the half-ring GMR sensor are presented. DC characterization of the fabricated sensor showed a magnetoresistance of 5.9 %. Experimental results showed that the half-ring GMR sensor detected the presence of 2 μm magnetic beads. Hence, half-ring GMR sensors integrated with a circular micro-trap have great potential to be used as an effective disease diagnostic device. © 2011 IEEE.

  15. A half-ring GMR sensor for detection of magnetic beads immobilized on a circular micro-trap

    KAUST Repository

    Gooneratne, Chinthaka Pasan; Liang, Cai; Useinov, Arthur; Kosel, Jü rgen; Giouroudi, Ioanna

    2011-01-01

    Utilizing magnetic principles in biological immunoassays is an attractive option given its ability to remotely and non-invasively manipulate and detect cells tagged with micro/nano size superparamagnetic type beads and due to the fact that even the most complex biological immunoassays will have very little magnetic effect. The presence of magnetic beads can be detected by a magnetic sensor which quantifies the amount of target cells present in the immunoassay. In order to increase the detection rate a circular conducting micro-trap is employed to attract, trap and transport the magnetic beads to the sensing area. In this research we propose a half-ring spin valve type giant magnetoresistance (GMR) sensor for the measurement of stray fields produced by 2 μm magnetic beads which are around the circular micro-trap. A couple of half-ring GMR sensors can be used to cover the entire circular border width, in order to detect the majority of the immobilized magnetic beads. Analytical and numerical analysis leading towards the fabrication of the half-ring GMR sensor are presented. DC characterization of the fabricated sensor showed a magnetoresistance of 5.9 %. Experimental results showed that the half-ring GMR sensor detected the presence of 2 μm magnetic beads. Hence, half-ring GMR sensors integrated with a circular micro-trap have great potential to be used as an effective disease diagnostic device. © 2011 IEEE.

  16. A Fiber-Optic Sensor for Acoustic Emission Detection in a High Voltage Cable System

    Directory of Open Access Journals (Sweden)

    Tongzhi Zhang

    2016-11-01

    Full Text Available We have proposed and demonstrated a Michelson interferometer-based fiber sensor for detecting acoustic emission generated from the partial discharge (PD of the accessories of a high-voltage cable system. The developed sensor head is integrated with a compact and relatively high sensitivity cylindrical elastomer. Such a sensor has a broadband frequency response and a relatively high sensitivity in a harsh environment under a high-voltage electric field. The design and fabrication of the sensor head integrated with the cylindrical elastomer is described, and a series of experiments was conducted to evaluate the sensing performance. The experimental results demonstrate that the sensitivity of our developed sensor for acoustic detection of partial discharges is 1.7 rad / ( m ⋅ Pa . A high frequency response up to 150 kHz is achieved. Moreover, the relatively high sensitivity for the detection of PD is verified in both the laboratory environment and gas insulated switchgear. The obtained results show the great potential application of a Michelson interferometer-based fiber sensor integrated with a cylindrical elastomer for in-situ monitoring high-voltage cable accessories for safety work.

  17. Voltage transients in thin-film InSb Hall sensor

    Science.gov (United States)

    Bardin, Alexey; Ignatjev, Vyacheslav; Orlov, Andrey; Perchenko, Sergey

    The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μ V on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films.

  18. Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

    Science.gov (United States)

    Omura, Yasuhisa; Mori, Yoshiaki; Sato, Shingo; Mallik, Abhijit

    2018-04-01

    This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discussed in detail. With regard to recent studies on isoelectronic traps, it has been discovered that deep level density must be minimized to suppress the OFF-state leakage current, as is well known, whereas shallow levels can be utilized to control the ON-state current level. A possible mechanism is discussed based on simulation results.

  19. Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2012-01-01

    We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

  20. Domain IV voltage-sensor movement is both sufficient and rate limiting for fast inactivation in sodium channels.

    Science.gov (United States)

    Capes, Deborah L; Goldschen-Ohm, Marcel P; Arcisio-Miranda, Manoel; Bezanilla, Francisco; Chanda, Baron

    2013-08-01

    Voltage-gated sodium channels are critical for the generation and propagation of electrical signals in most excitable cells. Activation of Na(+) channels initiates an action potential, and fast inactivation facilitates repolarization of the membrane by the outward K(+) current. Fast inactivation is also the main determinant of the refractory period between successive electrical impulses. Although the voltage sensor of domain IV (DIV) has been implicated in fast inactivation, it remains unclear whether the activation of DIV alone is sufficient for fast inactivation to occur. Here, we functionally neutralize each specific voltage sensor by mutating several critical arginines in the S4 segment to glutamines. We assess the individual role of each voltage-sensing domain in the voltage dependence and kinetics of fast inactivation upon its specific inhibition. We show that movement of the DIV voltage sensor is the rate-limiting step for both development and recovery from fast inactivation. Our data suggest that activation of the DIV voltage sensor alone is sufficient for fast inactivation to occur, and that activation of DIV before channel opening is the molecular mechanism for closed-state inactivation. We propose a kinetic model of sodium channel gating that can account for our major findings over a wide voltage range by postulating that DIV movement is both necessary and sufficient for fast inactivation.

  1. Design, experiments and simulation of voltage transformers on the basis of a differential input D-dot sensor.

    Science.gov (United States)

    Wang, Jingang; Gao, Can; Yang, Jie

    2014-07-17

    Currently available traditional electromagnetic voltage sensors fail to meet the measurement requirements of the smart grid, because of low accuracy in the static and dynamic ranges and the occurrence of ferromagnetic resonance attributed to overvoltage and output short circuit. This work develops a new non-contact high-bandwidth voltage measurement system for power equipment. This system aims at the miniaturization and non-contact measurement of the smart grid. After traditional D-dot voltage probe analysis, an improved method is proposed. For the sensor to work in a self-integrating pattern, the differential input pattern is adopted for circuit design, and grounding is removed. To prove the structure design, circuit component parameters, and insulation characteristics, Ansoft Maxwell software is used for the simulation. Moreover, the new probe was tested on a 10 kV high-voltage test platform for steady-state error and transient behavior. Experimental results ascertain that the root mean square values of measured voltage are precise and that the phase error is small. The D-dot voltage sensor not only meets the requirement of high accuracy but also exhibits satisfactory transient response. This sensor can meet the intelligence, miniaturization, and convenience requirements of the smart grid.

  2. Optical fiber sensor of partial discharges in High Voltage DC experiments

    Science.gov (United States)

    Búa-Núñez, I.; Azcárraga-Ramos, C. G.; Posada-Román, J. E.; Garcia-Souto, J. A.

    2014-05-01

    A setup simulating High Voltage DC (HVDC) transformers barriers was developed to demonstrate the effectiveness of an optical fiber (OF) sensor in detecting partial discharges (PD) under these peculiar conditions. Different PD detection techniques were compared: electrical methods, and acoustic methods. Standard piezoelectric sensors (R15i-AST) and the above mentioned OF sensors were used for acoustic detection. The OF sensor was able to detect PD acoustically with a sensitivity better than the other detection methods. The multichannel instrumentation system was tested in real HVDC conditions with the aim of analyzing the behavior of the insulation (mineral oil/pressboard).

  3. Voltage transients in thin-film InSb Hall sensor

    Directory of Open Access Journals (Sweden)

    Alexey Bardin

    Full Text Available The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μV on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films. 2000 MSC: 41A05, 41A10, 65D05, 65D17, Keywords: Thin-films, Semiconductors, Hall sensor, InSb, thermo-e.m.f.

  4. Design, Experiments and Simulation of Voltage Transformers on the Basis of a Differential Input D-dot Sensor

    Directory of Open Access Journals (Sweden)

    Jingang Wang

    2014-07-01

    Full Text Available Currently available traditional electromagnetic voltage sensors fail to meet the measurement requirements of the smart grid, because of low accuracy in the static and dynamic ranges and the occurrence of ferromagnetic resonance attributed to overvoltage and output short circuit. This work develops a new non-contact high-bandwidth voltage measurement system for power equipment. This system aims at the miniaturization and non-contact measurement of the smart grid. After traditional D-dot voltage probe analysis, an improved method is proposed. For the sensor to work in a self-integrating pattern, the differential input pattern is adopted for circuit design, and grounding is removed. To prove the structure design, circuit component parameters, and insulation characteristics, Ansoft Maxwell software is used for the simulation. Moreover, the new probe was tested on a 10 kV high-voltage test platform for steady-state error and transient behavior. Experimental results ascertain that the root mean square values of measured voltage are precise and that the phase error is small. The D-dot voltage sensor not only meets the requirement of high accuracy but also exhibits satisfactory transient response. This sensor can meet the intelligence, miniaturization, and convenience requirements of the smart grid.

  5. Induction sensor for measuring the accelerating voltage in an iron-free induction accelerator

    International Nuclear Information System (INIS)

    Bol'nykh, N.S.; Il'in, Yu.M.; Kostyushok, A.A.; Suvorov, V.A.

    1987-01-01

    An inductive sensor is described for measuring the amplitude and form of the accelerating-voltage pulse in the storage coils in a radial iron-free linear induction accelerator. The sensor does not respond to interference from external fields and does not require adjustment after calibration

  6. Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker

    CERN Document Server

    Adam, W.; Dragicevic, M.; Friedl, M.; Fruehwirth, R.; Hoch, M.; Hrubec, J.; Krammer, M.; Treberspurg, W.; Waltenberger, W.; Alderweireldt, S.; Beaumont, W.; Janssen, X.; Luyckx, S.; Van Mechelen, P.; Van Remortel, N.; Van Spilbeeck, A.; Barria, P.; Caillol, C.; Clerbaux, B.; De Lentdecker, G.; Dobur, D.; Favart, L.; Grebenyuk, A.; Lenzi, Th.; Leonard, A.; Maerschalk, Th.; Mohammadi, A.; Pernie, L.; Randle-Conde, A.; Reis, T.; Seva, T.; Thomas, L.; Vander Velde, C.; Vanlaer, P.; Wang, J.; Zenoni, F.; Zeid, S.Abu; Blekman, F.; De Bruyn, I.; D'Hondt, J.; Daci, N.; Deroover, K.; Heracleous, N.; Keaveney, J.; Lowette, S.; Moreels; Olbrechts, A.; Python, Q.; Tavernier, S.; Van Mulders, P.; Van Onsem, G.; Van Parijs, I.; Strom, D.A.; Basegmez, S.; Bruno, G.; Castello, R.; Caudron, A.; Ceard, L.; De Callatay, B.; Delaere, C.; Pree, T.Du; Forthomme, L.; Giammanco, A.; Hollar, J.; Jez, P.; Michotte, D.; Nuttens, C.; Perrini, L.; Pagano, D.; Quertenmont, L.; Selvaggi, M.; Marono, M.Vidal; Beliy, N.; Caebergs, T.; Daubie, E.; Hammad, G.H.; Harkonen, J.; Lampen, T.; Luukka, P.R.; Maenpaa, T.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Eerola, P.; Tuuva, T.; Beaulieu, G.; Boudoul, G.; Combaret, C.; Contardo, D.; Gallbit, G.; Lumb, N.; Mathez, H.; Mirabito, L.; Perries, S.; Sabes, D.; Vander Donckt, M.; Verdier, P.; Viret, S.; Zoccarato, Y.; Agram, J.L.; Conte, E.; Fontaine, J.Ch.; Andrea, J.; Bloch, D.; Bonnin, C.; Brom, J.M.; Chabert, E.; Charles, L.; Goetzmann, Ch.; Gross, L.; Hosselet, J.; Mathieu, C.; Richer, M.; Skovpen, K.; Pistone, C.; Fluegge, G.; Kuensken, A.; Geisler, M.; Pooth, O.; Stahl, A.; Autermann, C.; Edelhoff, M.; Esser, H.; Feld, L.; Karpinski, W.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Pierschel, G.; Preuten, M.; Raupach, F.; Sammet, J.; Schael, S.; Schwering, G.; Wittmer, B.; Wlochal, M.; Zhukov, V.; Bartosik, N.; Behr, J.; Burgmeier, A.; Calligaris, L.; Dolinska, G.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Fluke, G.; Garcia, J.Garay; Gizhko, A.; Hansen, K.; Harb, A.; Hauk, J.; Kalogeropoulos, A.; Kleinwort, C.; Korol, I.; Lange, W.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Nayak, A.; Ntomari, E.; Perrey, H.; Pitzl, D.; Schroeder, M.; Seitz, C.; Spannagel, S.; Zuber, A.; Biskop, H.; Blobel, V.; Buhmann, P.; Centis-Vignali, M.; Draeger, A.R.; Erfle, J.; Garutti, E.; Haller, J.; Hoffmann, M.; Junkes, A.; Lapsien, T.; Mattig, S.; Matysek, M.; Perieanu, A.; Poehlsen, J.; Poehlsen, T.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Sola, V.; Steinbruck, G.; Wellhausen, J.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; De Boer, W.; Butz, E.; Casele, M.; Colombo, F.; Dierlamm, A.; Eber, R.; Freund, B.; Hartmann, F.; Hauth, Th.; Heindl, S.; Hoffmann, K.H.; Husemann, U.; Kornmeyer, A.; Mallows, S.; Muller, Th.; Nuernberg, A.; Printz, M.; Simonis, H.J.; Steck, P.; Weber, M.; Weiler, Th.; Bhardwaj, A.; Kumar, A.; Ranjan, K.; Bakhshiansohl, H.; Behnamian, H.; Khakzad, M.; Naseri, M.; Cariola, P.; De Robertis, G.; Fiore, L.; Franco, M.; Loddo, F.; Sala, G.; Silvestris, L.; Creanza, D.; De Palma, M.; Maggi, G.; My, S.; Selvaggi, G.; Albergo, S.; Cappello, G.; Chiorboli, M.; Costa, S.; Giordano, F.; Di Mattia, A.; Potenza, R.; Saizu, M.A.; Tricomi, A.; Tuve, C.; Barbagli, G.; Brianzi, M.; Ciaranfi, R.; Civinini, C.; Gallo, E.; Meschini, M.; Paoletti, S.; Sguazzoni, G.; Ciulli, V.; D'Alessandro, R.; Gonzi, S.; Gori, V.; Focardi, E.; Lenzi, P.; Scarlini, E.; Tropiano, A.; Viliani, L.; Ferro, F.; Robutti, E.; Lo Vetere, M.; Gennai, S.; Malvezzi, S.; Menasce, D.; Moroni, L.; Pedrini, D.; Dinardo, M.; Fiorendi, S.; Manzoni, R.A.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Dorigo, T.; Giubilato, P.; Pozzobon, N.; Tosi, M.; Zucchetta, A.; De Canio, F.; Gaioni, L.; Manghisoni, M.; Nodari, B.; Re, V.; Traversi, G.; Comotti, D.; Ratti, L.; Bilei, G.M.; Bissi, L.; Checcucci, B.; Magalotti, D.; Menichelli, M.; Saha, A.; Servoli, L.; Storchi, L.; Biasini, M.; Conti, E.; Ciangottini, D.; Fano, L.; Lariccia, P.; Mantovani, G.; Passeri, D.; Placidi, P.; Salvatore, M.; Santocchia, A.; Solestizi, L.A.; Spiezia, A.; Androsov, K.; Azzurri, P.; Arezzini, S.; Bagliesi, G.; Basti, A.; Boccali, T.; Bosi, F.; Castaldi, R.; Ciampa, A.; Ciocci, M.A.; Dell'Orso, R.; Fedi, G.; Giassi, A.; Grippo, M.T.; Lomtadze, T.; Magazzu, G.; Mazzoni, E.; Minuti, M.; Moggi, A.; Moon, C.S.; Morsani, F.; Palla, F.; Palmonari, F.; Raffaelli, F.; Savoy-Navarro, A.; Serban, A.T.; Spagnolo, P.; Tenchini, R.; Venturi, A.; Verdini, P.G.; Martini, L.; Messineo, A.; Rizzi, A.; Tonelli, G.; Calzolari, F.; Donato, S.; Fiori, F.; Ligabue, F.; Vernieri, C.; Demaria, N.; Rivetti, A.; Bellan, R.; Casasso, S.; Costa, M.; Covarelli, R.; Migliore, E.; Monteil, E.; Musich, M.; Pacher, L.; Ravera, F.; Romero, A.; Solano, A.; Trapani, P.; Jaramillo Echeverria, R.; Fernandez, M.; Gomez, G.; Moya, D.; F. Gonzalez Sanchez, J.; Munoz Sanchez, F.J.; Vila, I.; Virto, A.L.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bianchi, G.; Blanchot, G.; Breuker, H.; Ceresa, D.; Christiansen, J.; Cichy, K.; Daguin, J.; D'Alfonso, M.; D'Auria, A.; Detraz, S.; De Visscher, S.; Deyrail, D.; Faccio, F.; Felici, D.; Frank, N.; Gill, K.; Giordano, D.; Harris, P.; Honma, A.; Kaplon, J.; Kornmayer, A.; Kottelat, L.; Kovacs, M.; Mannelli, M.; Marchioro, A.; Marconi, S.; Martina, S.; Mersi, S.; Michelis, S.; Moll, M.; Onnela, A.; Pakulski, T.; Pavis, S.; Peisert, A.; Pernot, J.F.; Petagna, P.; Petrucciani, G.; Postema, H.; Rose, P.; Rzonca, M.; Stoye, M.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Vichoudis, P.; Verlaat, B.; Zwalinski, L.; Bachmair, F.; Becker, R.; Bani, L.; di Calafiori, D.; Casal, B.; Djambazov, L.; Donega, M.; Dunser, M.; Eller, P.; Grab, C.; Hits, D.; Horisberger, U.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Martinez Ruiz del Arbol, P.; Masciovecchio, M.; Perrozzi, L.; Roeser, U.; Rossini, M.; Starodumov, A.; Takahashi, M.; Wallny, R.; Amsler, C.; Bosiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; De Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Chen, P.H.; Dietz, C.; Grundler, U.; Hou, W.S.; Lu, R.S.; Moya, M.; Wilken, R.; Cussans, D.; Flacher, H.; Goldstein, J.; Grimes, M.; Jacob, J.; El Nasr-Storey, S.Seif; Cole, J.; Hobson, P.; Leggat, D.; Reid, I.D.; Teodorescu, L.; Bainbridge, R.; Dauncey, P.; Fulcher, J.; Hall, G.; Magnan, A.M.; Pesaresi, M.; Raymond, D.M.; Uchida, K.; Coughlan, J.A.; Harder, K.; Ilic, J.; Tomalin, I.R.; Garabedian, A.; Heintz, U.; Narain, M.; Nelson, J.; Sagir, S.; Speer, T.; Swanson, J.; Tersegno, D.; Watson-Daniels, J.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay; Burt, K.; Ellison, J.; Hanson, G.; Malberti, M.; Olmedo, M.; Cerati, G.; Sharma, V.; Vartak, A.; Yagil, A.; Della Porta, G.Zevi; Dutta, V.; Gouskos, L.; Incandela, J.; Kyre, S.; McColl, N.; Mullin, S.; White, D.; Cumalat, J.P.; Ford, W.T.; Gaz, A.; Krohn, M.; Stenson, K.; Wagner, S.R.; Baldin, B.; Bolla, G.; Burkett, K.; Butler, J.; Cheung, H.; Chramowicz, J.; Christian, D.; Cooper, W.E.; Deptuch, G.; Derylo, G.; Gingu, C.; Gruenendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Jung, A.; Joshi, U.; Kahlid, F.; Lei, C.M.; Lipton, R.; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Shenai, A.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Yin, H.; Adams, M.R.; Berry, D.R.; Evdokimov, A.; Evdokimov, O.; Gerber, C.E.; Hofman, D.J.; Kapustka, B.K.; O'Brien, C.; Sandoval Gonzalez, D.I.; Trauger, H.; Turner, P.; Parashar, N.; Stupak, J.; I.I.I.; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D.H.; Shi, X.; Tan, P.; Baringer, P.; Bean, A.; Benelli, G.; Gray, J.; Majumder, D.; Noonan, D.; Sanders, S.; Stringer, R.; Ivanov, A.; Makouski, M.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Acosta, J.G.; Cremaldi, L.M.; Oliveros, S.; Perera, L.; Summers, D.; Bloom, K.; Bose, S.; Claes, D.R.; Dominguez, A.; Fangmeier, C.; Gonzalez Suarez, R.; Meier, F.; Monroy, J.; Hahn, K.; Sevova, S.; Sung, K.; Trovato, M.; Bartz, E.; Duggan, D.; Halkiadakis, E.; Lath, A.; Park, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Mendez, H.; Ramirez Vargas, J.E.; Alyari, M.; Dolen, J.; George, J.; Godshalk, A.; Iashvili, I.; Kaisen, J.; Kharchilava, A.; Kumar, A.; Rappoccio, S.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; Kaufman, G.; Mirman, N.; Ryd, A.; Salvati, E.; Skinnari, L.; Thom, J.; Thompson, J.; Tucker, J.; Winstrom, L.; Akgun, B.; Ecklund, K.M.; Nussbaum, T.; Zabel, J.; Betchart, B.; Demina, R.; Hindrichs, O.; Petrillo, G.; Eusebi, R.; Osipenkov, I.; Perloff, A.; Ulmer, K.A.; Delannoy, A.G.; D'Angelo, P.; Johns, W.

    2016-04-22

    The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \\cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes...

  7. Low-voltage 96 dB snapshot CMOS image sensor with 4.5 nW power dissipation per pixel.

    Science.gov (United States)

    Spivak, Arthur; Teman, Adam; Belenky, Alexander; Yadid-Pecht, Orly; Fish, Alexander

    2012-01-01

    Modern "smart" CMOS sensors have penetrated into various applications, such as surveillance systems, bio-medical applications, digital cameras, cellular phones and many others. Reducing the power of these sensors continuously challenges designers. In this paper, a low power global shutter CMOS image sensor with Wide Dynamic Range (WDR) ability is presented. This sensor features several power reduction techniques, including a dual voltage supply, a selective power down, transistors with different threshold voltages, a non-rationed logic, and a low voltage static memory. A combination of all these approaches has enabled the design of the low voltage "smart" image sensor, which is capable of reaching a remarkable dynamic range, while consuming very low power. The proposed power-saving solutions have allowed the maintenance of the standard architecture of the sensor, reducing both the time and the cost of the design. In order to maintain the image quality, a relation between the sensor performance and power has been analyzed and a mathematical model, describing the sensor Signal to Noise Ratio (SNR) and Dynamic Range (DR) as a function of the power supplies, is proposed. The described sensor was implemented in a 0.18 um CMOS process and successfully tested in the laboratory. An SNR of 48 dB and DR of 96 dB were achieved with a power dissipation of 4.5 nW per pixel.

  8. Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my [Centre of Innovative Nanostructures and Nanodevices, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750 Tronoh, Perak (Malaysia)

    2014-03-24

    Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

  9. Acoustic Detection Of Loose Particles In Pressure Sensors

    Science.gov (United States)

    Kwok, Lloyd C.

    1995-01-01

    Particle-impact-noise-detector (PIND) apparatus used in conjunction with computer program analyzing output of apparatus to detect extraneous particles trapped in pressure sensors. PIND tester essentially shaker equipped with microphone measuring noise in pressure sensor or other object being shaken. Shaker applies controlled vibration. Output of microphone recorded and expressed in terms of voltage, yielding history of noise subsequently processed by computer program. Data taken at sampling rate sufficiently high to enable identification of all impacts of particles on sensor diaphragm and on inner surfaces of sensor cavities.

  10. Monitoring Pest Insect Traps by Means of Low-Power Image Sensor Technologies

    Directory of Open Access Journals (Sweden)

    Juan J. Serrano

    2012-11-01

    Full Text Available Monitoring pest insect populations is currently a key issue in agriculture and forestry protection. At the farm level, human operators typically must perform periodical surveys of the traps disseminated through the field. This is a labor-, time- and cost-consuming activity, in particular for large plantations or large forestry areas, so it would be of great advantage to have an affordable system capable of doing this task automatically in an accurate and a more efficient way. This paper proposes an autonomous monitoring system based on a low-cost image sensor that it is able to capture and send images of the trap contents to a remote control station with the periodicity demanded by the trapping application. Our autonomous monitoring system will be able to cover large areas with very low energy consumption. This issue would be the main key point in our study; since the operational live of the overall monitoring system should be extended to months of continuous operation without any kind of maintenance (i.e., battery replacement. The images delivered by image sensors would be time-stamped and processed in the control station to get the number of individuals found at each trap. All the information would be conveniently stored at the control station, and accessible via Internet by means of available network services at control station (WiFi, WiMax, 3G/4G, etc..

  11. Monitoring Pest Insect Traps by Means of Low-Power Image Sensor Technologies

    Science.gov (United States)

    López, Otoniel; Rach, Miguel Martinez; Migallon, Hector; Malumbres, Manuel P.; Bonastre, Alberto; Serrano, Juan J.

    2012-01-01

    Monitoring pest insect populations is currently a key issue in agriculture and forestry protection. At the farm level, human operators typically must perform periodical surveys of the traps disseminated through the field. This is a labor-, time- and cost-consuming activity, in particular for large plantations or large forestry areas, so it would be of great advantage to have an affordable system capable of doing this task automatically in an accurate and a more efficient way. This paper proposes an autonomous monitoring system based on a low-cost image sensor that it is able to capture and send images of the trap contents to a remote control station with the periodicity demanded by the trapping application. Our autonomous monitoring system will be able to cover large areas with very low energy consumption. This issue would be the main key point in our study; since the operational live of the overall monitoring system should be extended to months of continuous operation without any kind of maintenance (i.e., battery replacement). The images delivered by image sensors would be time-stamped and processed in the control station to get the number of individuals found at each trap. All the information would be conveniently stored at the control station, and accessible via Internet by means of available network services at control station (WiFi, WiMax, 3G/4G, etc.). PMID:23202232

  12. Positioning of the sensor cell on the sensing area using cell trapping pattern in incubation type planar patch clamp biosensor.

    Science.gov (United States)

    Wang, Zhi-Hong; Takada, Noriko; Uno, Hidetaka; Ishizuka, Toru; Yawo, Hiromu; Urisu, Tsuneo

    2012-08-01

    Positioning the sensor cell on the micropore of the sensor chip and keeping it there during incubation are problematic tasks for incubation type planar patch clamp biosensors. To solve these problems, we formed on the Si sensor chip's surface a cell trapping pattern consisting of a lattice pattern with a round area 5 μm deep and with the micropore at the center of the round area. The surface of the sensor chip was coated with extra cellular matrix collagen IV, and HEK293 cells on which a chimera molecule of channel-rhodopsin-wide-receiver (ChR-WR) was expressed, were then seeded. We examined the effects of this cell trapping pattern on the biosensor's operation. In the case of a flat sensor chip without a cell trapping pattern, it took several days before the sensor cell covered the micropore and formed an almost confluent state. As a result, multi-cell layers easily formed and made channel current measurements impossible. On the other hand, the sensor chip with cell trapping pattern easily trapped cells in the round area, and formed the colony consisted of the cell monolayer covering the micropore. A laser (473 nm wavelength) induced channel current was observed from the whole cell arrangement formed using the nystatin perforation technique. The observed channel current characteristics matched measurements made by using a pipette patch clamp. Copyright © 2012 Elsevier B.V. All rights reserved.

  13. Graphene-edge dielectrophoretic tweezers for trapping of biomolecules.

    Science.gov (United States)

    Barik, Avijit; Zhang, Yao; Grassi, Roberto; Nadappuram, Binoy Paulose; Edel, Joshua B; Low, Tony; Koester, Steven J; Oh, Sang-Hyun

    2017-11-30

    The many unique properties of graphene, such as the tunable optical, electrical, and plasmonic response make it ideally suited for applications such as biosensing. As with other surface-based biosensors, however, the performance is limited by the diffusive transport of target molecules to the surface. Here we show that atomically sharp edges of monolayer graphene can generate singular electrical field gradients for trapping biomolecules via dielectrophoresis. Graphene-edge dielectrophoresis pushes the physical limit of gradient-force-based trapping by creating atomically sharp tweezers. We have fabricated locally backgated devices with an 8-nm-thick HfO 2 dielectric layer and chemical-vapor-deposited graphene to generate 10× higher gradient forces as compared to metal electrodes. We further demonstrate near-100% position-controlled particle trapping at voltages as low as 0.45 V with nanodiamonds, nanobeads, and DNA from bulk solution within seconds. This trapping scheme can be seamlessly integrated with sensors utilizing graphene as well as other two-dimensional materials.

  14. Low-Voltage 96 dB Snapshot CMOS Image Sensor with 4.5 nW Power Dissipation per Pixel

    Directory of Open Access Journals (Sweden)

    Orly Yadid-Pecht

    2012-07-01

    Full Text Available Modern “smart” CMOS sensors have penetrated into various applications, such as surveillance systems, bio-medical applications, digital cameras, cellular phones and many others. Reducing the power of these sensors continuously challenges designers. In this paper, a low power global shutter CMOS image sensor with Wide Dynamic Range (WDR ability is presented. This sensor features several power reduction techniques, including a dual voltage supply, a selective power down, transistors with different threshold voltages, a non-rationed logic, and a low voltage static memory. A combination of all these approaches has enabled the design of the low voltage “smart” image sensor, which is capable of reaching a remarkable dynamic range, while consuming very low power. The proposed power-saving solutions have allowed the maintenance of the standard architecture of the sensor, reducing both the time and the cost of the design. In order to maintain the image quality, a relation between the sensor performance and power has been analyzed and a mathematical model, describing the sensor Signal to Noise Ratio (SNR and Dynamic Range (DR as a function of the power supplies, is proposed. The described sensor was implemented in a 0.18 um CMOS process and successfully tested in the laboratory. An SNR of 48 dB and DR of 96 dB were achieved with a power dissipation of 4.5 nW per pixel.

  15. Hyperpolarization moves S4 sensors inward to open MVP, a methanococcal voltage-gated potassium channel.

    Science.gov (United States)

    Sesti, Federico; Rajan, Sindhu; Gonzalez-Colaso, Rosana; Nikolaeva, Natalia; Goldstein, Steve A N

    2003-04-01

    MVP, a Methanococcus jannaschii voltage-gated potassium channel, was cloned and shown to operate in eukaryotic and prokaryotic cells. Like pacemaker channels, MVP opens on hyperpolarization using S4 voltage sensors like those in classical channels activated by depolarization. The MVP S4 span resembles classical sensors in sequence, charge, topology and movement, traveling inward on hyperpolarization and outward on depolarization (via canaliculi in the protein that bring the extracellular and internal solutions into proximity across a short barrier). Thus, MVP opens with sensors inward indicating a reversal of S4 position and pore state compared to classical channels. Homologous channels in mammals and plants are expected to function similarly.

  16. Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory

    Science.gov (United States)

    Chiang, Yen-Chang; Hsiao, Yang-Hsuan; Li, Jeng-Ting; Chen, Jen-Sue

    2018-02-01

    Charge-trapping memories (CTMs) based on zinc tin oxide (ZTO) semiconductor thin-film transistors (TFTs) can be programmed by a positive gate voltage and erased by a negative gate voltage in conjunction with light illumination. To understand the mechanism involved, the sub-gap density of states associated with ionized oxygen vacancies in the ZTO active layer is extracted from optical response capacitance-voltage (C-V) measurements. The corresponding energy states of ionized oxygen vacancies are observed below the conduction band minimum at approximately 0.5-1.0 eV. From a comparison of the fitted oxygen vacancy concentration in the CTM-TFT after the light-bias erasing operation, it is found that the pristine-erased device contains more oxygen vacancies than the program-erased device because the trapped electrons in the programmed device are pulled into the active layer and neutralized by the oxygen vacancies that are present there.

  17. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

    CERN Document Server

    Benoit, M.

    2016-07-21

    Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

  18. Simple mechanical parameters identification of induction machine using voltage sensor only

    International Nuclear Information System (INIS)

    Horen, Yoram; Strajnikov, Pavel; Kuperman, Alon

    2015-01-01

    Highlights: • A simple low cost algorithm for induction motor mechanical parameters estimation is proposed. • Voltage sensing only is performed; speed sensor is not required. • The method is suitable for both wound rotor and squirrel cage motors. - Abstract: A simple low cost algorithm for induction motor mechanical parameters estimation without speed sensor is presented in this paper. Estimation is carried out by recording stator terminal voltage during natural braking and subsequent offline curve fitting. The algorithm allows accurately reconstructing mechanical time constant as well as loading torque speed dependency. Although the mathematical basis of the presented method is developed for wound rotor motors, it is shown to be suitable for squirrel cage motors as well. The algorithm is first tested by reconstruction of simulation model parameters and then by processing measurement results of several motors. Simulation and experimental results support the validity of the proposed algorithm

  19. Design and experimental investigation of a low-voltage thermoelectric energy harvesting system for wireless sensor nodes

    International Nuclear Information System (INIS)

    Guan, Mingjie; Wang, Kunpeng; Xu, Dazheng; Liao, Wei-Hsin

    2017-01-01

    Highlights: • A thermoelectric energy harvesting system for wireless sensor nodes is designed. • An ultra-low voltage self-startup is implemented. • Maximum power point tracking and low power designs are applied for high efficiency. • Efficiency of 44.2–75.4% is obtained with open-circuit voltage of 84–400 mV. • System efficiency is higher than the commercial BQ25504 converter. - Abstract: A thermoelectric energy harvesting system designed to harvest tens of microwatts to several milliwatts from low-voltage thermoelectric generators is presented in this paper. The proposed system is based-on a two-stage boost scheme with self-startup ability. A maximum power point tracking technique based on the open-circuit voltage is adopted in the boost converter for high efficiency. Experimental results indicate that the proposed system can harvest thermoelectric energy and run a microcontroller unit and a wireless sensor node under low input voltage and power with high efficiency. The harvest system and wireless sensor node can be self-powered with minimum thermoelectric open-circuit voltage as 62 mV and input power of 84 μW. With a self-startup scheme, the proposed system can self-start with a 20 mV input voltage. Low power designs are applied in the system to reduce the quiescent dissipation power. It results in better performance considering the conversion efficiency and self-startup ability compared to commercial boost systems used for thermal energy harvesting.

  20. Development of a high throughput single-particle screening for inorganic semiconductor nanorods as neural voltage sensor

    Science.gov (United States)

    Kuo, Yung; Park, Kyoungwon; Li, Jack; Ingargiola, Antonino; Park, Joonhyuck; Shvadchak, Volodymyr; Weiss, Shimon

    2017-08-01

    Monitoring membrane potential in neurons requires sensors with minimal invasiveness, high spatial and temporal (sub-ms) resolution, and large sensitivity for enabling detection of sub-threshold activities. While organic dyes and fluorescent proteins have been developed to possess voltage-sensing properties, photobleaching, cytotoxicity, low sensitivity, and low spatial resolution have obstructed further studies. Semiconductor nanoparticles (NPs), as prospective voltage sensors, have shown excellent sensitivity based on Quantum confined Stark effect (QCSE) at room temperature and at single particle level. Both theory and experiment have shown their voltage sensitivity can be increased significantly via material, bandgap, and structural engineering. Based on theoretical calculations, we synthesized one of the optimal candidates for voltage sensors: 12 nm type-II ZnSe/CdS nanorods (NRs), with an asymmetrically located seed. The voltage sensitivity and spectral shift were characterized in vitro using spectrally-resolved microscopy using electrodes grown by thin film deposition, which "sandwich" the NRs. We characterized multiple batches of such NRs and iteratively modified the synthesis to achieve higher voltage sensitivity (ΔF/F> 10%), larger spectral shift (>5 nm), better homogeneity, and better colloidal stability. Using a high throughput screening method, we were able to compare the voltage sensitivity of our NRs with commercial spherical quantum dots (QDs) with single particle statistics. Our method of high throughput screening with spectrally-resolved microscope also provides a versatile tool for studying single particles spectroscopy under field modulation.

  1. Design of the corona current measurement sensor with wide bandwidth under dc ultra-high-voltage environment

    International Nuclear Information System (INIS)

    Liu, Yingyi; Yuan, Haiwen; Yang, Qinghua; Cui, Yong

    2011-01-01

    The research in the field of corona discharge, which is one of the key technologies, can help us to realize ultra-high-voltage (UHV) power transmission. This paper proposes a new sampling resistance sensor to measure the dc UHV corona current in a wide band. By designing the structural and distributed parameters of the sensor, the UHV dielectric breakdown performance and the wide-band measuring characteristics of the sensor are satisfied. A high-voltage discharge test shows that the designed sensor can work under a 1200 kV dc environment without the occurrence of corona discharge. A frequency characteristic test shows that the measuring bandwidth of the sensor can be improved from the current 4.5 to 20 MHz. The test results in an actual dc UHV transmission line demonstrate that the sensor can accurately measure the corona current under the dc UHV environment

  2. A new mechanism of voltage-dependent gating exposed by KV10.1 channels interrupted between voltage sensor and pore.

    Science.gov (United States)

    Tomczak, Adam P; Fernández-Trillo, Jorge; Bharill, Shashank; Papp, Ferenc; Panyi, Gyorgy; Stühmer, Walter; Isacoff, Ehud Y; Pardo, Luis A

    2017-05-01

    Voltage-gated ion channels couple transmembrane potential changes to ion flow. Conformational changes in the voltage-sensing domain (VSD) of the channel are thought to be transmitted to the pore domain (PD) through an α-helical linker between them (S4-S5 linker). However, our recent work on channels disrupted in the S4-S5 linker has challenged this interpretation for the KCNH family. Furthermore, a recent single-particle cryo-electron microscopy structure of K V 10.1 revealed that the S4-S5 linker is a short loop in this KCNH family member, confirming the need for an alternative gating model. Here we use "split" channels made by expression of VSD and PD as separate fragments to investigate the mechanism of gating in K V 10.1. We find that disruption of the covalent connection within the S4 helix compromises the ability of channels to close at negative voltage, whereas disconnecting the S4-S5 linker from S5 slows down activation and deactivation kinetics. Surprisingly, voltage-clamp fluorometry and MTS accessibility assays show that the motion of the S4 voltage sensor is virtually unaffected when VSD and PD are not covalently bound. Finally, experiments using constitutively open PD mutants suggest that the presence of the VSD is structurally important for the conducting conformation of the pore. Collectively, our observations offer partial support to the gating model that assumes that an inward motion of the C-terminal S4 helix, rather than the S4-S5 linker, closes the channel gate, while also suggesting that control of the pore by the voltage sensor involves more than one mechanism. © 2017 Tomczak et al.

  3. Optimal power and performance trade-offs for dynamic voltage scaling in power management based wireless sensor node

    Directory of Open Access Journals (Sweden)

    Anuradha Pughat

    2016-09-01

    Full Text Available Dynamic voltage scaling contributes to a significant amount of power saving, especially in the energy constrained wireless sensor networks (WSNs. Existing dynamic voltage scaling techniques make the system slower and ignore the event miss rate. This results in degradation of the system performance when there is non-stationary workload at input. The overhead due to transition between voltage level and discrete voltage levels are also the limitations of available dynamic voltage scaling (DVS techniques at sensor node (SN. This paper proposes a workload dependent DVS based MSP430 controller model used for SN. An online gradient estimation technique has been used to optimize power and performance trade-offs. The analytical results are validated with the simulation results obtained using simulation tool “SimEvents” and compared with the available AT9OS8535 controller. Based on the stochastic workload, the controller's input voltage, operational frequency, utilization, and average wait time of events are obtained.

  4. Mass sensors with mechanical traps for weighing single cells in different fluids.

    Science.gov (United States)

    Weng, Yaochung; Delgado, Francisco Feijó; Son, Sungmin; Burg, Thomas P; Wasserman, Steven C; Manalis, Scott R

    2011-12-21

    We present two methods by which single cells can be mechanically trapped and continuously monitored within the suspended microchannel resonator (SMR) mass sensor. Since the fluid surrounding the trapped cell can be quickly and completely replaced on demand, our methods are well suited for measuring changes in cell size and growth in response to drugs or other chemical stimuli. We validate our methods by measuring the density of single polystyrene beads and Saccharomyces cerevisiae yeast cells with a precision of approximately 10(-3) g cm(-3), and by monitoring the growth of single mouse lymphoblast cells before and after drug treatment.

  5. An efficient biosensor made of an electromagnetic trap and a magneto-resistive sensor

    KAUST Repository

    Li, Fuquan

    2014-09-01

    Magneto-resistive biosensors have been found to be useful because of their high sensitivity, low cost, small size, and direct electrical output. They use super-paramagnetic beads to label a biological target and detect it via sensing the stray field. In this paper, we report a new setup for magnetic biosensors, replacing the conventional "sandwich" concept with an electromagnetic trap. We demonstrate the capability of the biosensor in the detection of E. coli. The trap is formed by a current-carrying microwire that attracts the magnetic beads into a sensing space on top of a tunnel magneto-resistive sensor. The sensor signal depends on the number of beads in the sensing space, which depends on the size of the beads. This enables the detection of biological targets, because such targets increase the volume of the beads. Experiments were carried out with a 6. μm wide microwire, which attracted the magnetic beads from a distance of 60. μm, when a current of 30. mA was applied. A sensing space of 30. μm in length and 6. μm in width was defined by the magnetic sensor. The results showed that individual E. coli bacterium inside the sensing space could be detected using super-paramagnetic beads that are 2.8. μm in diameter. The electromagnetic trap setup greatly simplifies the device and reduces the detection process to two steps: (i) mixing the bacteria with magnetic beads and (ii) applying the sample solution to the sensor for measurement, which can be accomplished within about 30. min with a sample volume in the μl range. This setup also ensures that the biosensor can be cleaned easily and re-used immediately. The presented setup is readily integrated on chips via standard microfabrication techniques. © 2014 Elsevier B.V.

  6. General Voltage Feedback Circuit Model in the Two-Dimensional Networked Resistive Sensor Array

    Directory of Open Access Journals (Sweden)

    JianFeng Wu

    2015-01-01

    Full Text Available To analyze the feature of the two-dimensional networked resistive sensor array, we firstly proposed a general model of voltage feedback circuits (VFCs such as the voltage feedback non-scanned-electrode circuit, the voltage feedback non-scanned-sampling-electrode circuit, and the voltage feedback non-scanned-sampling-electrode circuit. By analyzing the general model, we then gave a general mathematical expression of the effective equivalent resistor of the element being tested in VFCs. Finally, we evaluated the features of VFCs with simulation and test experiment. The results show that the expression is applicable to analyze the VFCs’ performance of parameters such as the multiplexers’ switch resistors, the nonscanned elements, and array size.

  7. PIEZOELECTRIC WAVEGUIDE SENSOR FOR MEASURING PULSE PRESSURE IN CLOSED LIQUID VOLUMES AT HIGH VOLTAGE ELECTRIC DISCHARGE

    Directory of Open Access Journals (Sweden)

    V. G. Zhekul

    2017-10-01

    Full Text Available Purpose. Investigations of the characteristics of pressure waves presuppose the registration of the total profile of the pressure wave at a given point in space. For these purposes, various types of «pressure to the electrical signal» transmitters (sensors are used. Most of the common sensors are unsuitable for measuring the pulse pressure in a closed water volume at high hydrostatic pressures, in particular to study the effect of a powerful high-voltage pulse discharge on increasing the inflow of minerals and drinking water in wells. The purpose of the work was to develop antijamming piezoelectric waveguide sensor for measuring pulse pressure at a close distance from a high-voltage discharge channel in a closed volume of a liquid. Methodology. We have applied the calibration method as used as a secondary standard, the theory of electrical circuits. Results. We have selected the design and the circuit solution of the waveguide pressure sensor. We have developed a waveguide pulse-pressure sensor DTX-1 with a measuring loop. This sensor makes it possible to study the spectral characteristics of pressure waves of high-voltage pulse discharge in closed volumes of liquid at a hydrostatic pressure of up to 20 MPa and a temperature of up to 80 °C. The sensor can be used to study pressure waves with a maximum amplitude value of up to 150 MPa and duration of up to 80 µs. According to the results of the calibration, the sensitivity of the developed sensor DTX-1 with a measuring loop is 0.0346 V/MPa. Originality. We have further developed the theory of designing the waveguide piezoelectric pulse pressure sensors for measuring the pulse pressure at a close distance from a high-voltage discharge channel in a closed fluid volume by controlling the attenuation of the amplitude of the pressure signal. Practical value. We have developed, created, calibrated, used in scientific research waveguide pressure pulse sensors DTX-1. We propose sensors DTX-1 for sale

  8. X-ray radiation damage studies and design of a silicon pixel sensor for science at the XFEL

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiaguo

    2013-06-15

    Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of Xray radiation damage up to these high doses, MOS capacitors and gate-controlled diodes built on high resistivity n-doped silicon with crystal orientations left angle 100 right angle and left angle 111 right angle produced by four vendors, CiS, Hamamatsu, Canberra and Sintef have been irradiated with 12 keV X-rays at the DESY DORIS III synchrotron-light source. Using capacitance/ conductance-voltage, current-voltage and thermal dielectric relaxation current measurements, the densities of oxide charges and interface traps at the Si-SiO{sub 2} interface, and the surface-current densities have been determined as function of dose. Results indicate that the dose dependence of the oxide-charge density, the interface-trap density and the surface-current density depend on the crystal orientation and producer. In addition, the influence of the voltage applied to the gates of the MOS capacitor and the gate-controlled diode during X-ray irradiation on the oxide-charge density, the interface-trap density and the surface-current density has been investigated at doses of 100 kGy and 100 MGy. It is found that both strongly depend on the gate voltage if the electric field in the oxide points from the surface of the SiO{sub 2} to the Si-SiO{sub 2} interface. To verify the long-term stability of irradiated silicon sensors, annealing studies have been performed at 60 C and 80 C on MOS capacitors and gate-controlled diodes irradiated to 5 MGy as well, and the annealing kinetics of oxide charges and surface current were determined. Moreover, the macroscopic electrical properties of segmented sensors have slao been investigated as function of dose. It is found that the defects introduced by X-rays increase the full depletion voltage, the surface leakage current and the inter-electrode capacitance of the segmented sensor. An

  9. X-ray radiation damage studies and design of a silicon pixel sensor for science at the XFEL

    International Nuclear Information System (INIS)

    Zhang, Jiaguo

    2013-06-01

    Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of Xray radiation damage up to these high doses, MOS capacitors and gate-controlled diodes built on high resistivity n-doped silicon with crystal orientations left angle 100 right angle and left angle 111 right angle produced by four vendors, CiS, Hamamatsu, Canberra and Sintef have been irradiated with 12 keV X-rays at the DESY DORIS III synchrotron-light source. Using capacitance/ conductance-voltage, current-voltage and thermal dielectric relaxation current measurements, the densities of oxide charges and interface traps at the Si-SiO 2 interface, and the surface-current densities have been determined as function of dose. Results indicate that the dose dependence of the oxide-charge density, the interface-trap density and the surface-current density depend on the crystal orientation and producer. In addition, the influence of the voltage applied to the gates of the MOS capacitor and the gate-controlled diode during X-ray irradiation on the oxide-charge density, the interface-trap density and the surface-current density has been investigated at doses of 100 kGy and 100 MGy. It is found that both strongly depend on the gate voltage if the electric field in the oxide points from the surface of the SiO 2 to the Si-SiO 2 interface. To verify the long-term stability of irradiated silicon sensors, annealing studies have been performed at 60 C and 80 C on MOS capacitors and gate-controlled diodes irradiated to 5 MGy as well, and the annealing kinetics of oxide charges and surface current were determined. Moreover, the macroscopic electrical properties of segmented sensors have slao been investigated as function of dose. It is found that the defects introduced by X-rays increase the full depletion voltage, the surface leakage current and the inter-electrode capacitance of the segmented sensor. An electron

  10. Interface charge trapping induced flatband voltage shift during plasma-enhanced atomic layer deposition in through silicon via

    Science.gov (United States)

    Li, Yunlong; Suhard, Samuel; Van Huylenbroeck, Stefaan; Meersschaut, Johan; Van Besien, Els; Stucchi, Michele; Croes, Kristof; Beyer, Gerald; Beyne, Eric

    2017-12-01

    A Through Silicon Via (TSV) is a key component for 3D integrated circuit stacking technology, and the diameter of a TSV keeps scaling down to reduce the footprint in silicon. The TSV aspect ratio, defined as the TSV depth/diameter, tends to increase consequently. Starting from the aspect ratio of 10, to improve the TSV sidewall coverage and reduce the process thermal budget, the TSV dielectric liner deposition process has evolved from sub-atmospheric chemical vapour deposition to plasma-enhanced atomic layer deposition (PE-ALD). However, with this change, a strong negative shift in the flatband voltage is observed in the capacitance-voltage characteristic of the vertical metal-oxide-semiconductor (MOS) parasitic capacitor formed between the TSV copper metal and the p-Si substrate. And, no shift is present in planar MOS capacitors manufactured with the same PE-ALD oxide. By comparing the integration process of these two MOS capacitor structures, and by using Elastic Recoil Detection to study the elemental composition of our films, it is found that the origin of the negative flatband voltage shift is the positive charge trapping at the Si/SiO2 interface, due to the positive PE-ALD reactants confined to the narrow cavity of high aspect ratio TSVs. This interface charge trapping effect can be effectively mitigated by high temperature annealing. However, this is limited in the real process due to the high thermal budget. Further investigation on liner oxide process optimization is needed.

  11. Optimal dynamic voltage scaling for wireless sensor nodes with real-time constraints

    Science.gov (United States)

    Cassandras, Christos G.; Zhuang, Shixin

    2005-11-01

    Sensors are increasingly embedded in manufacturing systems and wirelessly networked to monitor and manage operations ranging from process and inventory control to tracking equipment and even post-manufacturing product monitoring. In building such sensor networks, a critical issue is the limited and hard to replenish energy in the devices involved. Dynamic voltage scaling is a technique that controls the operating voltage of a processor to provide desired performance while conserving energy and prolonging the overall network's lifetime. We consider such power-limited devices processing time-critical tasks which are non-preemptive, aperiodic and have uncertain arrival times. We treat voltage scaling as a dynamic optimization problem whose objective is to minimize energy consumption subject to hard or soft real-time execution constraints. In the case of hard constraints, we build on prior work (which engages a voltage scaling controller at task completion times) by developing an intra-task controller that acts at all arrival times of incoming tasks. We show that this optimization problem can be decomposed into two simpler ones whose solution leads to an algorithm that does not actually require solving any nonlinear programming problems. In the case of soft constraints, this decomposition must be partly relaxed, but it still leads to a scalable (linear in the number of tasks) algorithm. Simulation results are provided to illustrate performance improvements in systems with intra-task controllers compared to uncontrolled systems or those using inter-task control.

  12. Chloride Anions Regulate Kinetics but Not Voltage-Sensor Qmax of the Solute Carrier SLC26a5.

    Science.gov (United States)

    Santos-Sacchi, Joseph; Song, Lei

    2016-06-07

    In general, SLC26 solute carriers serve to transport a variety of anions across biological membranes. However, prestin (SLC26a5) has evolved, now serving as a motor protein in outer hair cells (OHCs) of the mammalian inner ear and is required for cochlear amplification, a mechanical feedback mechanism to boost auditory performance. The mechanical activity of the OHC imparted by prestin is driven by voltage and controlled by anions, chiefly intracellular chloride. Current opinion is that chloride anions control the Boltzmann characteristics of the voltage sensor responsible for prestin activity, including Qmax, the total sensor charge moved within the membrane, and Vh, a measure of prestin's operating voltage range. Here, we show that standard narrow-band, high-frequency admittance measures of nonlinear capacitance (NLC), an alternate representation of the sensor's charge-voltage (Q-V) relationship, is inadequate for assessment of Qmax, an estimate of the sum of unitary charges contributed by all voltage sensors within the membrane. Prestin's slow transition rates and chloride-binding kinetics adversely influence these estimates, contributing to the prevalent concept that intracellular chloride level controls the quantity of sensor charge moved. By monitoring charge movement across frequency, using measures of multifrequency admittance, expanded displacement current integration, and OHC electromotility, we find that chloride influences prestin kinetics, thereby controlling charge magnitude at any particular frequency of interrogation. Importantly, however, this chloride dependence vanishes as frequency decreases, with Qmax asymptoting at a level irrespective of the chloride level. These data indicate that prestin activity is significantly low-pass in the frequency domain, with important implications for cochlear amplification. We also note that the occurrence of voltage-dependent charge movements in other SLC26 family members may be hidden by inadequate

  13. Effects of controlling the interface trap densities in InGaZnO thin-film transistors on their threshold voltage shifts

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, S-W.; Lee, J-T.; Roh, Y. [Sungkyunkwan University, Suwon (Korea, Republic of)

    2014-12-15

    In this paper, the threshold voltage stability characteristics of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) are discussed. The IGZO TFTs were found to induce a parallel threshold voltage (V{sub th}) shift with changing field effect mobility (μ{sub FE}) or a sub-threshold gate voltage swing (SS) due to various thermal annealing conditions. The IGZO TFT that was post-annealed in an O{sub 2} ambient was found to be more stable for use in oxide-based TFT devices and to have better performance characteristics, such as the on/off current ratio (I{sub on/off} ), SS, and V{sub th}, than other TFTs did. The mechanism for improving the V{sub th} stability in the post-annealed IGZO TFT is a decrease in the number of trap sites for the electrons and the weak oxygen bonding in the IGZO thin films. The device's performance could be significantly affected by adjusting the annealing conditions. This mechanism is closely related to that of modulation annealing, where the number of localized trapped carriers and defect centers at the interface or in the channel layer are reduced.

  14. Electron traps in semiconducting polymers : Exponential versus Gaussian trap distribution

    NARCIS (Netherlands)

    Nicolai, H. T.; Mandoc, M. M.; Blom, P. W. M.

    2011-01-01

    The low electron currents in poly(dialkoxy-p-phenylene vinylene) (PPV) derivatives and their steep voltage dependence are generally explained by trap-limited conduction in the presence of an exponential trap distribution. Here we demonstrate that the electron transport of several PPV derivatives can

  15. Electron traps in semiconducting polymers: exponential versus Gaussian trap distribution

    NARCIS (Netherlands)

    Nicolai, H.T.; Mandoc, M.M.; Blom, P.W.M.

    2011-01-01

    The low electron currents in poly(dialkoxy-p-phenylene vinylene) (PPV) derivatives and their steep voltage dependence are generally explained by trap-limited conduction in the presence of an exponential trap distribution. Here we demonstrate that the electron transport of several PPV derivatives can

  16. Co-wound voltage sensor R ampersand D for TPX magnets

    International Nuclear Information System (INIS)

    Chaplin, M.R.; Martovetsky, N.N.; Zbasnik, J.

    1995-01-01

    The Tokamak Physics Experiment (TPX) will be the first tokamak to use superconducting cable-in-conduit-conductors (CICC) in all Poloidal Field (PF) ampersand Toroidal Field (TF) magnets. Conventional quench detection, the measurement of small resistive normal-zone voltages ( 4 kV). In the quench detection design for TPX, we have considered several different locations for internal co-wound voltage sensors in the cable cross-section as the primary mechanism to cancel this inductive noise. The Noise Rejection Experiment (NRE) at LLNL and the Noise Injection Experiment (NIE) at MIT have been designed to evaluate which internal locations will produce the best inductive-noise cancellation, and provide us with experimental data to calibrate analysis codes. The details of the experiments and resulting data are presented

  17. High-fidelity optical reporting of neuronal electrical activity with an ultrafast fluorescent voltage sensor

    Science.gov (United States)

    St-Pierre, François; Marshall, Jesse D; Yang, Ying; Gong, Yiyang; Schnitzer, Mark J; Lin, Michael Z

    2015-01-01

    Accurate optical reporting of electrical activity in genetically defined neuronal populations is a long-standing goal in neuroscience. Here we describe Accelerated Sensor of Action Potentials 1 (ASAP1), a novel voltage sensor design in which a circularly permuted green fluorescent protein is inserted within an extracellular loop of a voltage-sensing domain, rendering fluorescence responsive to membrane potential. ASAP1 demonstrates on- and off- kinetics of 2.1 and 2.0 ms, reliably detects single action potentials and subthreshold potential changes, and tracks trains of action potential waveforms up to 200 Hz in single trials. With a favorable combination of brightness, dynamic range, and speed, ASAP1 enables continuous monitoring of membrane potential in neurons at KHz frame rates using standard epifluorescence microscopy. PMID:24755780

  18. Induction of divalent cation permeability by heterologous expression of a voltage sensor domain.

    Science.gov (United States)

    Arima, Hiroki; Tsutsui, Hidekazu; Sakamoto, Ayako; Yoshida, Manabu; Okamura, Yasushi

    2018-01-06

    The voltage sensor domain (VSD) is a protein domain that confers sensitivity to membrane potential in voltage-gated ion channels as well as the voltage-sensing phosphatase. Although VSDs have long been considered to function as regulatory units acting on adjacent effectors, recent studies have revealed the existence of direct ion permeation paths in some mutated VSDs and in the voltage-gated proton channel. In this study, we show that calcium currents are evoked upon membrane hyperpolarization in cells expressing a VSD derived from an ascidian voltage-gated ion channel superfamily. Unlike the previously reported omega-pore in the Shaker K + channel and rNav1.4, mutations are not required. From electrophysiological experiments in heterologous expression systems, we found that the conductance is directly mediated by the VSD itself and is carried by both monovalent and divalent cations. This is the first report of divalent cation permeation through a VSD-like structure. Copyright © 2018 Elsevier B.V. All rights reserved.

  19. Voltage-dependent gating in a "voltage sensor-less" ion channel.

    Directory of Open Access Journals (Sweden)

    Harley T Kurata

    2010-02-01

    Full Text Available The voltage sensitivity of voltage-gated cation channels is primarily attributed to conformational changes of a four transmembrane segment voltage-sensing domain, conserved across many levels of biological complexity. We have identified a remarkable point mutation that confers significant voltage dependence to Kir6.2, a ligand-gated channel that lacks any canonical voltage-sensing domain. Similar to voltage-dependent Kv channels, the Kir6.2[L157E] mutant exhibits time-dependent activation upon membrane depolarization, resulting in an outwardly rectifying current-voltage relationship. This voltage dependence is convergent with the intrinsic ligand-dependent gating mechanisms of Kir6.2, since increasing the membrane PIP2 content saturates Po and eliminates voltage dependence, whereas voltage activation is more dramatic when channel Po is reduced by application of ATP or poly-lysine. These experiments thus demonstrate an inherent voltage dependence of gating in a "ligand-gated" K+ channel, and thereby provide a new view of voltage-dependent gating mechanisms in ion channels. Most interestingly, the voltage- and ligand-dependent gating of Kir6.2[L157E] is highly sensitive to intracellular [K+], indicating an interaction between ion permeation and gating. While these two key features of channel function are classically dealt with separately, the results provide a framework for understanding their interaction, which is likely to be a general, if latent, feature of the superfamily of cation channels.

  20. Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

    International Nuclear Information System (INIS)

    Betta, G.-F. Dalla; Mendicino, R.; Povoli, M.; Sultan, D.M.S.; Ayllon, N.; Hoeferkamp, M.; McDuff, H.; Seidel, S.; Boscardin, M.; Zorzi, N.; Mattiazzo, S.

    2016-01-01

    We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

  1. Ion trap device

    Science.gov (United States)

    Ibrahim, Yehia M.; Smith, Richard D.

    2016-01-26

    An ion trap device is disclosed. The device includes a series of electrodes that define an ion flow path. A radio frequency (RF) field is applied to the series of electrodes such that each electrode is phase shifted approximately 180 degrees from an adjacent electrode. A DC voltage is superimposed with the RF field to create a DC gradient to drive ions in the direction of the gradient. A second RF field or DC voltage is applied to selectively trap and release the ions from the device. Further, the device may be gridless and utilized at high pressure.

  2. Wireless Sensor Network for Radiometric Detection and Assessment of Partial Discharge in High-Voltage Equipment

    Science.gov (United States)

    Upton, D. W.; Saeed, B. I.; Mather, P. J.; Lazaridis, P. I.; Vieira, M. F. Q.; Atkinson, R. C.; Tachtatzis, C.; Garcia, M. S.; Judd, M. D.; Glover, I. A.

    2018-03-01

    Monitoring of partial discharge (PD) activity within high-voltage electrical environments is increasingly used for the assessment of insulation condition. Traditional measurement techniques employ technologies that either require off-line installation or have high power consumption and are hence costly. A wireless sensor network is proposed that utilizes only received signal strength to locate areas of PD activity within a high-voltage electricity substation. The network comprises low-power and low-cost radiometric sensor nodes which receive the radiation propagated from a source of PD. Results are reported from several empirical tests performed within a large indoor environment and a substation environment using a network of nine sensor nodes. A portable PD source emulator was placed at multiple locations within the network. Signal strength measured by the nodes is reported via WirelessHART to a data collection hub where it is processed using a location algorithm. The results obtained place the measured location within 2 m of the actual source location.

  3. Surface effects in segmented silicon sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kopsalis, Ioannis

    2017-05-15

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO{sub 2} layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO{sub 2} and at the Si-SiO{sub 2} interface. In this thesis the surface radiation damage of the Si-SiO{sub 2} system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO{sub 2} of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO{sub 2}) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO{sub 2} interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface

  4. Surface effects in segmented silicon sensors

    International Nuclear Information System (INIS)

    Kopsalis, Ioannis

    2017-05-01

    Silicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface. In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

  5. Native pyroglutamation of huwentoxin-IV: a post-translational modification that increases the trapping ability to the sodium channel.

    Science.gov (United States)

    Rong, Mingqiang; Duan, Zhigui; Chen, Juliang; Li, Jianglin; Xiao, Yuchen; Liang, Songping

    2013-01-01

    Huwentoxin-IV (HWTX-IV), a tetrodotoxin-sensitive (TTX-s) sodium channel antagonist, is found in the venom of the Chinese spider Ornithoctonus huwena. A naturally modified HWTX-IV (mHWTX-IV), having a molecular mass 18 Da lower than HWTX-IV, has also been isolated from the venom of the same spider. By a combination of enzymatic fragmentation and MS/MS de novo sequencing, mHWTX-IV has been shown to have the same amino acid sequence as that of HWTX-IV, except that the N-terminal glutamic acid replaced by pyroglutamic acid. mHWTX-IV inhibited tetrodotoxin-sensitive voltage-gated sodium channels of dorsal root ganglion neurons with an IC50 nearly equal to native HWTX-IV. mHWTX-IV showed the same activation and inactivation kinetics seen for native HWTX-IV. In contrast with HWTX-IV, which dissociates at moderate voltage depolarization voltages (+50 mV, 180000 ms), mHWTX-IV inhibition of TTX-sensitive sodium channels is not reversed by strong depolarization voltages (+200 mV, 500 ms). Recovery of Nav1.7current was voltage-dependent and was induced by extreme depolarization in the presence of HWTX-IV, but no obvious current was elicited after application of mHWTX-IV. Our data indicate that the N-terminal modification of HWTX-IV gives the peptide toxin a greater ability to trap the voltage sensor in the sodium channel. Loss of a negative charge, caused by cyclization at the N-terminus, is a possible reason why the modified toxin binds much stronger. To our knowledge, this is the first report of a pyroglutamic acid residue in a spider toxin; this modification seems to increase the trapping ability of the voltage sensor in the sodium channel.

  6. Native pyroglutamation of huwentoxin-IV: a post-translational modification that increases the trapping ability to the sodium channel.

    Directory of Open Access Journals (Sweden)

    Mingqiang Rong

    Full Text Available Huwentoxin-IV (HWTX-IV, a tetrodotoxin-sensitive (TTX-s sodium channel antagonist, is found in the venom of the Chinese spider Ornithoctonus huwena. A naturally modified HWTX-IV (mHWTX-IV, having a molecular mass 18 Da lower than HWTX-IV, has also been isolated from the venom of the same spider. By a combination of enzymatic fragmentation and MS/MS de novo sequencing, mHWTX-IV has been shown to have the same amino acid sequence as that of HWTX-IV, except that the N-terminal glutamic acid replaced by pyroglutamic acid. mHWTX-IV inhibited tetrodotoxin-sensitive voltage-gated sodium channels of dorsal root ganglion neurons with an IC50 nearly equal to native HWTX-IV. mHWTX-IV showed the same activation and inactivation kinetics seen for native HWTX-IV. In contrast with HWTX-IV, which dissociates at moderate voltage depolarization voltages (+50 mV, 180000 ms, mHWTX-IV inhibition of TTX-sensitive sodium channels is not reversed by strong depolarization voltages (+200 mV, 500 ms. Recovery of Nav1.7current was voltage-dependent and was induced by extreme depolarization in the presence of HWTX-IV, but no obvious current was elicited after application of mHWTX-IV. Our data indicate that the N-terminal modification of HWTX-IV gives the peptide toxin a greater ability to trap the voltage sensor in the sodium channel. Loss of a negative charge, caused by cyclization at the N-terminus, is a possible reason why the modified toxin binds much stronger. To our knowledge, this is the first report of a pyroglutamic acid residue in a spider toxin; this modification seems to increase the trapping ability of the voltage sensor in the sodium channel.

  7. Voltage-dependent motion of the catalytic region of voltage-sensing phosphatase monitored by a fluorescent amino acid.

    Science.gov (United States)

    Sakata, Souhei; Jinno, Yuka; Kawanabe, Akira; Okamura, Yasushi

    2016-07-05

    The cytoplasmic region of voltage-sensing phosphatase (VSP) derives the voltage dependence of its catalytic activity from coupling to a voltage sensor homologous to that of voltage-gated ion channels. To assess the conformational changes in the cytoplasmic region upon activation of the voltage sensor, we genetically incorporated a fluorescent unnatural amino acid, 3-(6-acetylnaphthalen-2-ylamino)-2-aminopropanoic acid (Anap), into the catalytic region of Ciona intestinalis VSP (Ci-VSP). Measurements of Anap fluorescence under voltage clamp in Xenopus oocytes revealed that the catalytic region assumes distinct conformations dependent on the degree of voltage-sensor activation. FRET analysis showed that the catalytic region remains situated beneath the plasma membrane, irrespective of the voltage level. Moreover, Anap fluorescence from a membrane-facing loop in the C2 domain showed a pattern reflecting substrate turnover. These results indicate that the voltage sensor regulates Ci-VSP catalytic activity by causing conformational changes in the entire catalytic region, without changing their distance from the plasma membrane.

  8. Voltage-dependent motion of the catalytic region of voltage-sensing phosphatase monitored by a fluorescent amino acid

    Science.gov (United States)

    Sakata, Souhei; Jinno, Yuka; Kawanabe, Akira; Okamura, Yasushi

    2016-01-01

    The cytoplasmic region of voltage-sensing phosphatase (VSP) derives the voltage dependence of its catalytic activity from coupling to a voltage sensor homologous to that of voltage-gated ion channels. To assess the conformational changes in the cytoplasmic region upon activation of the voltage sensor, we genetically incorporated a fluorescent unnatural amino acid, 3-(6-acetylnaphthalen-2-ylamino)-2-aminopropanoic acid (Anap), into the catalytic region of Ciona intestinalis VSP (Ci-VSP). Measurements of Anap fluorescence under voltage clamp in Xenopus oocytes revealed that the catalytic region assumes distinct conformations dependent on the degree of voltage-sensor activation. FRET analysis showed that the catalytic region remains situated beneath the plasma membrane, irrespective of the voltage level. Moreover, Anap fluorescence from a membrane-facing loop in the C2 domain showed a pattern reflecting substrate turnover. These results indicate that the voltage sensor regulates Ci-VSP catalytic activity by causing conformational changes in the entire catalytic region, without changing their distance from the plasma membrane. PMID:27330112

  9. Voltage-Dependent Gating: Novel Insights from KCNQ1 Channels

    Science.gov (United States)

    Cui, Jianmin

    2016-01-01

    Gating of voltage-dependent cation channels involves three general molecular processes: voltage sensor activation, sensor-pore coupling, and pore opening. KCNQ1 is a voltage-gated potassium (Kv) channel whose distinctive properties have provided novel insights on fundamental principles of voltage-dependent gating. 1) Similar to other Kv channels, KCNQ1 voltage sensor activation undergoes two resolvable steps; but, unique to KCNQ1, the pore opens at both the intermediate and activated state of voltage sensor activation. The voltage sensor-pore coupling differs in the intermediate-open and the activated-open states, resulting in changes of open pore properties during voltage sensor activation. 2) The voltage sensor-pore coupling and pore opening require the membrane lipid PIP2 and intracellular ATP, respectively, as cofactors, thus voltage-dependent gating is dependent on multiple stimuli, including the binding of intracellular signaling molecules. These mechanisms underlie the extraordinary KCNE1 subunit modification of the KCNQ1 channel and have significant physiological implications. PMID:26745405

  10. A novel NaV1.5 voltage sensor mutation associated with severe atrial and ventricular arrhythmias.

    Science.gov (United States)

    Wang, Hong-Gang; Zhu, Wandi; Kanter, Ronald J; Silva, Jonathan R; Honeywell, Christina; Gow, Robert M; Pitt, Geoffrey S

    2016-03-01

    Inherited autosomal dominant mutations in cardiac sodium channels (NaV1.5) cause various arrhythmias, such as long QT syndrome and Brugada syndrome. Although dozens of mutations throughout the protein have been reported, there are few reported mutations within a voltage sensor S4 transmembrane segment and few that are homozygous. Here we report analysis of a novel lidocaine-sensitive recessive mutation, p.R1309H, in the NaV1.5 DIII/S4 voltage sensor in a patient with a complex arrhythmia syndrome. We expressed the wild type or mutant NaV1.5 heterologously for analysis with the patch-clamp and voltage clamp fluorometry (VCF) techniques. p.R1309H depolarized the voltage-dependence of activation, hyperpolarized the voltage-dependence of inactivation, and slowed recovery from inactivation, thereby reducing the channel availability at physiologic membrane potentials. Additionally, p.R1309H increased the "late" Na(+) current. The location of the mutation in DIIIS4 prompted testing for a gating pore current. We observed an inward current at hyperpolarizing voltages that likely exacerbates the loss-of-function defects at resting membrane potentials. Lidocaine reduced the gating pore current. The p.R1309H homozygous NaV1.5 mutation conferred both gain-of-function and loss-of-function effects on NaV1.5 channel activity. Reduction of a mutation-induced gating pore current by lidocaine suggested a therapeutic mechanism. Copyright © 2016 Elsevier Ltd. All rights reserved.

  11. Temperature- and supply voltage-independent time references for wireless sensor networks

    CERN Document Server

    De Smedt, Valentijn; Dehaene, Wim

    2015-01-01

    This book investigates the possible circuit solutions to overcome the temperature- and supply voltage-sensitivity of fully-integrated time references for ultra-low-power communication in wireless sensor networks. The authors provide an elaborate theoretical introduction and literature study to enable full understanding of the design challenges and shortcomings of current oscillator implementations.  Furthermore, a closer look to the short-term as well as the long-term frequency stability of integrated oscillators is taken. Next, a design strategy is developed and applied to 5 different oscillator topologies and 1 sensor interface.All 6 implementations are subject to an elaborate study of frequency stability, phase noise, and power consumption. In the final chapter all blocks are compared to the state of the art. The main goals of this book are: • to provide a comprehensive overview of timing issues and solutions in wireless sensor networks; • to gain understanding of all underlying mechanisms by starti...

  12. Photo-excited charge collection spectroscopy probing the traps in field-effect transistors

    CERN Document Server

    Im, Seongil; Kim, Jae Hoon

    2013-01-01

    Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics. The operational stabilities of such TFTs are thus important, strongly depending on the nature and density of charge traps present at the channel/dielectric interface or in the thin-film channel itself. This book contains how to characterize these traps, starting from the device physics of field-effect transistor (FET). Unlike conventional analysis techniques which are away from well-resolving spectral results, newly-introduced photo-excited charge-collection spectroscopy (PECCS) utilizes the photo-induced threshold voltage response from any type of working transistor devices with organic-, inorganic-, and even nano-channels, directly probing on the traps. So, our technique PECCS has been discussed through more than ten refereed-journal papers in the fields of device electronics, applied physics, applied chemistry, nano-devices and materia...

  13. The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider.

    Science.gov (United States)

    Garnacho, Fernando; Khamlichi, Abderrahim; Rovira, Jorge

    2017-11-17

    The most important advantage of voltage dividers over traditional voltage transformers is that voltage dividers do not have an iron core with non-linear hysteresis characteristics. The voltage dividers have a linear behavior with respect to over-voltages and a flat frequency response larger frequency range. The weak point of a voltage divider is the influence of external high-voltage (HV) and earth parts in its vicinity. Electrical fields arising from high voltages in neighboring phases and from ground conductors and structures are one of their main sources for systematic measurement errors. This paper describes a shielding voltage divider for a 24 kV medium voltage network insulated in SF6 composed of two resistive-capacitive dividers, one integrated within the other, achieving a flat frequency response up to 10 kHz for ratio error and up to 5 kHz for phase displacement error. The metal shielding improves its immunity against electric and magnetic fields. The characterization performed on the built-in voltage sensor shows an accuracy class of 0.2 for a frequency range from 20 Hz to 5 kHz and a class of 0.5 for 1 Hz up to 20 Hz. A low temperature effect is also achieved for operation conditions of MV power grids.

  14. Hysteresis analysis of graphene transistor under repeated test and gate voltage stress

    International Nuclear Information System (INIS)

    Yang Jie; Jia Kunpeng; Su Yajuan; Zhao Chao; Chen Yang

    2014-01-01

    The current transport characteristic is studied systematically based on a back-gate graphene field effect transistor, under repeated test and gate voltage stress. The interface trapped charges caused by the gate voltage sweep process screens the gate electric field, and results in the neutral point voltage shift between the forth and back sweep direction. In the repeated test process, the neutral point voltage keeps increasing with test times in both forth and back sweeps, which indicates the existence of interface trapped electrons residual and accumulation. In gate voltage stress experiment, the relative neutral point voltage significantly decreases with the reducing of stress voltage, especially in −40 V, which illustrates the driven-out phenomenon of trapped electrons under negative voltage stress. (semiconductor devices)

  15. Substitutions in the domain III voltage-sensing module enhance the sensitivity of an insect sodium channel to a scorpion beta-toxin.

    Science.gov (United States)

    Song, Weizhong; Du, Yuzhe; Liu, Zhiqi; Luo, Ningguang; Turkov, Michael; Gordon, Dalia; Gurevitz, Michael; Goldin, Alan L; Dong, Ke

    2011-05-06

    Scorpion β-toxins bind to the extracellular regions of the voltage-sensing module of domain II and to the pore module of domain III in voltage-gated sodium channels and enhance channel activation by trapping and stabilizing the voltage sensor of domain II in its activated state. We investigated the interaction of a highly potent insect-selective scorpion depressant β-toxin, Lqh-dprIT(3), from Leiurus quinquestriatus hebraeus with insect sodium channels from Blattella germanica (BgNa(v)). Like other scorpion β-toxins, Lqh-dprIT(3) shifts the voltage dependence of activation of BgNa(v) channels expressed in Xenopus oocytes to more negative membrane potentials but only after strong depolarizing prepulses. Notably, among 10 BgNa(v) splice variants tested for their sensitivity to the toxin, only BgNa(v)1-1 was hypersensitive due to an L1285P substitution in IIIS1 resulting from a U-to-C RNA-editing event. Furthermore, charge reversal of a negatively charged residue (E1290K) at the extracellular end of IIIS1 and the two innermost positively charged residues (R4E and R5E) in IIIS4 also increased the channel sensitivity to Lqh-dprIT(3). Besides enhancement of toxin sensitivity, the R4E substitution caused an additional 20-mV negative shift in the voltage dependence of activation of toxin-modified channels, inducing a unique toxin-modified state. Our findings provide the first direct evidence for the involvement of the domain III voltage-sensing module in the action of scorpion β-toxins. This hypersensitivity most likely reflects an increase in IIS4 trapping via allosteric mechanisms, suggesting coupling between the voltage sensors in neighboring domains during channel activation.

  16. Low-noise Magnetic Sensors

    KAUST Repository

    Kosel, Jü rgen; Sun, Jian

    2014-01-01

    Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

  17. Low-noise Magnetic Sensors

    KAUST Repository

    Kosel, Jurgen

    2014-03-27

    Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

  18. Voltage-dependent gating of hERG potassium channels

    Directory of Open Access Journals (Sweden)

    Yen May eCheng

    2012-05-01

    Full Text Available The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4-S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-a-go-go related gene, hERG, which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure-function relationships underlying voltage-dependent gating in Shaker and hERG channels, with a focus on the roles of the voltage sensing domain and the S4-S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter charge interactions. More recent data suggest that key amino acid differences in the hERG voltage sensing unit and S4-S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor.

  19. An active trap filter for high-power voltage source converters

    DEFF Research Database (Denmark)

    Bai, Haofeng; Wang, Xiongfei; Loh, Poh Chiang

    2015-01-01

    This paper proposes a power electronic based device to actively trap the switching current ripples for highpower converters. Control principle and system design of the active trap filter are discussed first. Comparisons of the active trap filter with LCL and LLCL filters are then carried out...

  20. A Novel Method for In-Situ Monitoring of Local Voltage, Temperature and Humidity Distributions in Fuel Cells Using Flexible Multi-Functional Micro Sensors

    Science.gov (United States)

    Lee, Chi-Yuan; Fan, Wei-Yuan; Chang, Chih-Ping

    2011-01-01

    In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS). These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC) and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it. PMID:22319361

  1. A novel method for in-situ monitoring of local voltage, temperature and humidity distributions in fuel cells using flexible multi-functional micro sensors.

    Science.gov (United States)

    Lee, Chi-Yuan; Fan, Wei-Yuan; Chang, Chih-Ping

    2011-01-01

    In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS). These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC) and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it.

  2. A Novel Method for In-Situ Monitoring of Local Voltage, Temperature and Humidity Distributions in Fuel Cells Using Flexible Multi-Functional Micro Sensors

    Directory of Open Access Journals (Sweden)

    Chih-Ping Chang

    2011-01-01

    Full Text Available In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS. These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it.

  3. Voltage-Dependent Gating of hERG Potassium Channels

    Science.gov (United States)

    Cheng, Yen May; Claydon, Tom W.

    2012-01-01

    The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv) channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4–S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-à-go-go related gene, hERG), which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure–function relationships underlying activation and deactivation gating in Shaker and hERG channels, with a focus on the roles of the voltage-sensing domain and the S4–S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter-charge interactions. More recent data suggest that key amino acid differences in the hERG voltage-sensing unit and S4–S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor. PMID:22586397

  4. Domain-to-domain coupling in voltage-sensing phosphatase.

    Science.gov (United States)

    Sakata, Souhei; Matsuda, Makoto; Kawanabe, Akira; Okamura, Yasushi

    2017-01-01

    Voltage-sensing phosphatase (VSP) consists of a transmembrane voltage sensor and a cytoplasmic enzyme region. The enzyme region contains the phosphatase and C2 domains, is structurally similar to the tumor suppressor phosphatase PTEN, and catalyzes the dephosphorylation of phosphoinositides. The transmembrane voltage sensor is connected to the phosphatase through a short linker region, and phosphatase activity is induced upon membrane depolarization. Although the detailed molecular characteristics of the voltage sensor domain and the enzyme region have been revealed, little is known how these two regions are coupled. In addition, it is important to know whether mechanism for coupling between the voltage sensor domain and downstream effector function is shared among other voltage sensor domain-containing proteins. Recent studies in which specific amino acid sites were genetically labeled using a fluorescent unnatural amino acid have enabled detection of the local structural changes in the cytoplasmic region of Ciona intestinalis VSP that occur with a change in membrane potential. The results of those studies provide novel insight into how the enzyme activity of the cytoplasmic region of VSP is regulated by the voltage sensor domain.

  5. High-voltage CMOS detectors

    International Nuclear Information System (INIS)

    Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

    2016-01-01

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

  6. High-voltage CMOS detectors

    Energy Technology Data Exchange (ETDEWEB)

    Ehrler, F., E-mail: felix.ehrler@student.kit.edu; Blanco, R.; Leys, R.; Perić, I.

    2016-07-11

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

  7. The Electronic McPhail Trap

    Science.gov (United States)

    Potamitis, Ilyas; Rigakis, Iraklis; Fysarakis, Konstantinos

    2014-01-01

    Certain insects affect cultivations in a detrimental way. A notable case is the olive fruit fly (Bactrocera oleae (Rossi)), that in Europe alone causes billions of euros in crop-loss/per year. Pests can be controlled with aerial and ground bait pesticide sprays, the efficiency of which depends on knowing the time and location of insect infestations as early as possible. The inspection of traps is currently carried out manually. Automatic monitoring traps can enhance efficient monitoring of flying pests by identifying and counting targeted pests as they enter the trap. This work deals with the hardware setup of an insect trap with an embedded optoelectronic sensor that automatically records insects as they fly in the trap. The sensor responsible for detecting the insect is an array of phototransistors receiving light from an infrared LED. The wing-beat recording is based on the interruption of the emitted light due to the partial occlusion from insect's wings as they fly in the trap. We show that the recordings are of high quality paving the way for automatic recognition and transmission of insect detections from the field to a smartphone. This work emphasizes the hardware implementation of the sensor and the detection/counting module giving all necessary implementation details needed to construct it. PMID:25429412

  8. Development of a TSC-Setup for the Characterization of Electron and Hole Traps in Irradiated Silicon Sensors

    CERN Document Server

    Stricker, Miriam

    2015-01-01

    For the characterization of radiation damage in silicon detectors a low-noise TSC-Setup was built to analyze charge trapping in the temperature range between 15 K and 250 K. The setup offers the possibility to perform Thermally Stimulated Current (TSC) and IV measurements and also to anneal samples at temperatures up to 180 ◦C. A first annealing study on a proton irradiated silicon pad sensor was performed. This study focuses mainly on the variation of the trap concentration and the results are compared to literature.

  9. Interfacial dynamic surface traps of lead sulfide (PbS) nanocrystals: test-platform for interfacial charge carrier traps at the organic/inorganic functional interface

    Science.gov (United States)

    Kim, Youngjun; Ko, Hyungduk; Park, Byoungnam

    2018-04-01

    Nanocrystal (NC) size and ligand dependent dynamic trap formation of lead sulfide (PbS) NCs in contact with an organic semiconductor were investigated using a pentacene/PbS field effect transistor (FET). We used a bilayer pentacene/PbS FET to extract information of the surface traps of PbS NCs at the pentacene/PbS interface through the field effect-induced charge carrier density measurement in the threshold and subthreshold regions. PbS size and ligand dependent trap properties were elucidated by the time domain and threshold voltage measurements in which threshold voltage shift occurs by carrier charging and discharging in the trap states of PbS NCs. The observed threshold voltage shift is interpreted in context of electron trapping through dynamic trap formation associated with PbS NCs. To the best of our knowledge, this is the first demonstration of the presence of interfacial dynamic trap density of PbS NC in contact with an organic semiconductor (pentacene). We found that the dynamic trap density of the PbS NC is size dependent and the carrier residence time in the specific trap sites is more sensitive to NC size variation than to NC ligand exchange. The probing method presented in the study offers a means to investigate the interfacial surface traps at the organic-inorganic hetero-junction, otherwise understanding of the buried surface traps at the functional interface would be elusive.

  10. Ultralow-Power Electronic Trapping of Nanoparticles with Sub-10 nm Gold Nanogap Electrodes.

    Science.gov (United States)

    Barik, Avijit; Chen, Xiaoshu; Oh, Sang-Hyun

    2016-10-12

    We demonstrate nanogap electrodes for rapid, parallel, and ultralow-power trapping of nanoparticles. Our device pushes the limit of dielectrophoresis by shrinking the separation between gold electrodes to sub-10 nm, thereby creating strong trapping forces at biases as low as the 100 mV ranges. Using high-throughput atomic layer lithography, we manufacture sub-10 nm gaps between 0.8 mm long gold electrodes and pattern them into individually addressable parallel electronic traps. Unlike pointlike junctions made by electron-beam lithography or larger micron-gap electrodes that are used for conventional dielectrophoresis, our sub-10 nm gold nanogap electrodes provide strong trapping forces over a mm-scale trapping zone. Importantly, our technology solves the key challenges associated with traditional dielectrophoresis experiments, such as high voltages that cause heat generation, bubble formation, and unwanted electrochemical reactions. The strongly enhanced fields around the nanogap induce particle-transport speed exceeding 10 μm/s and enable the trapping of 30 nm polystyrene nanoparticles using an ultralow bias of 200 mV. We also demonstrate rapid electronic trapping of quantum dots and nanodiamond particles on arrays of parallel traps. Our sub-10 nm gold nanogap electrodes can be combined with plasmonic sensors or nanophotonic circuitry, and their low-power electronic operation can potentially enable high-density integration on a chip as well as portable biosensing.

  11. Voltage dependence of a stochastic model of activation of an alpha helical S4 sensor in a K channel membrane

    Science.gov (United States)

    Vaccaro, S. R.

    2011-09-01

    The voltage dependence of the ionic and gating currents of a K channel is dependent on the activation barriers of a voltage sensor with a potential function which may be derived from the principal electrostatic forces on an S4 segment in an inhomogeneous dielectric medium. By variation of the parameters of a voltage-sensing domain model, consistent with x-ray structures and biophysical data, the lowest frequency of the survival probability of each stationary state derived from a solution of the Smoluchowski equation provides a good fit to the voltage dependence of the slowest time constant of the ionic current in a depolarized membrane, and the gating current exhibits a rising phase that precedes an exponential relaxation. For each depolarizing potential, the calculated time dependence of the survival probabilities of the closed states of an alpha helical S4 sensor are in accord with an empirical model of the ionic and gating currents recorded during the activation process.

  12. Constraints on voltage sensor movement in the shaker K+ channel.

    Science.gov (United States)

    Darman, Rachel B; Ivy, Allison A; Ketty, Vina; Blaustein, Robert O

    2006-12-01

    In nerve and muscle cells, the voltage-gated opening and closing of cation-selective ion channels is accompanied by the translocation of 12-14 elementary charges across the membrane's electric field. Although most of these charges are carried by residues in the S4 helix of the gating module of these channels, the precise nature of their physical movement is currently the topic of spirited debate. Broadly speaking, two classes of models have emerged: those that suggest that small-scale motions can account for the extensive charge displacement, and those that invoke a much larger physical movement. In the most recent incarnation of the latter type of model, which is based on structural and functional data from the archaebacterial K(+) channel KvAP, a "voltage-sensor paddle" comprising a helix-turn-helix of S3-S4 translocates approximately 20 A through the bilayer during the gating cycle (Jiang, Y., A. Lee, J. Chen, V. Ruta, M. Cadene, B.T. Chait, and R. MacKinnon. 2003. Nature. 423:33-41; Jiang, Y., V. Ruta, J. Chen, A. Lee, and R. MacKinnon. 2003. Nature. 423:42-48.; Ruta, V., J. Chen, and R. MacKinnon. 2005. Cell. 123:463-475). We used two methods to test for analogous motions in the Shaker K(+) channel, each examining the aqueous exposure of residues near S3. In the first, we employed a pore-blocking maleimide reagent (Blaustein, R.O., P.A. Cole, C. Williams, and C. Miller. 2000. Nat. Struct. Biol. 7:309-311) to probe for state-dependent changes in the chemical reactivity of substituted cysteines; in the second, we tested the state-dependent accessibility of a tethered biotin to external streptavidin (Qiu, X.Q., K.S. Jakes, A. Finkelstein, and S.L. Slatin. 1994. J. Biol. Chem. 269:7483-7488; Slatin, S.L., X.Q. Qiu, K.S. Jakes, and A. Finkelstein. 1994. Nature. 371:158-161). In both types of experiments, residues predicted to lie near the top of S3 did not exhibit any change in aqueous exposure during the gating cycle. This lack of state dependence argues against

  13. KCNE1 constrains the voltage sensor of Kv7.1 K+ channels.

    Directory of Open Access Journals (Sweden)

    Liora Shamgar

    Full Text Available Kv7 potassium channels whose mutations cause cardiovascular and neurological disorders are members of the superfamily of voltage-gated K(+ channels, comprising a central pore enclosed by four voltage-sensing domains (VSDs and sharing a homologous S4 sensor sequence. The Kv7.1 pore-forming subunit can interact with various KCNE auxiliary subunits to form K(+ channels with very different gating behaviors. In an attempt to characterize the nature of the promiscuous gating of Kv7.1 channels, we performed a tryptophan-scanning mutagenesis of the S4 sensor and analyzed the mutation-induced perturbations in gating free energy. Perturbing the gating energetics of Kv7.1 bias most of the mutant channels towards the closed state, while fewer mutations stabilize the open state or the inactivated state. In the absence of auxiliary subunits, mutations of specific S4 residues mimic the gating phenotypes produced by co-assembly of Kv7.1 with either KCNE1 or KCNE3. Many S4 perturbations compromise the ability of KCNE1 to properly regulate Kv7.1 channel gating. The tryptophan-induced packing perturbations and cysteine engineering studies in S4 suggest that KCNE1 lodges at the inter-VSD S4-S1 interface between two adjacent subunits, a strategic location to exert its striking action on Kv7.1 gating functions.

  14. The Electronic McPhail Trap

    Directory of Open Access Journals (Sweden)

    Ilyas Potamitis

    2014-11-01

    Full Text Available Certain insects affect cultivations in a detrimental way. A notable case is the olive fruit fly (Bactrocera oleae (Rossi, that in Europe alone causes billions of euros in crop-loss/per year. Pests can be controlled with aerial and ground bait pesticide sprays, the efficiency of which depends on knowing the time and location of insect infestations as early as possible. The inspection of traps is currently carried out manually. Automatic monitoring traps can enhance efficient monitoring of flying pests by identifying and counting targeted pests as they enter the trap. This work deals with the hardware setup of an insect trap with an embedded optoelectronic sensor that automatically records insects as they fly in the trap. The sensor responsible for detecting the insect is an array of phototransistors receiving light from an infrared LED. The wing-beat recording is based on the interruption of the emitted light due to the partial occlusion from insect’s wings as they fly in the trap. We show that the recordings are of high quality paving the way for automatic recognition and transmission of insect detections from the field to a smartphone. This work emphasizes the hardware implementation of the sensor and the detection/counting module giving all necessary implementation details needed to construct it.

  15. Gating mechanism of Kv11.1 (hERG) K+ channels without covalent connection between voltage sensor and pore domains.

    Science.gov (United States)

    de la Peña, Pilar; Domínguez, Pedro; Barros, Francisco

    2018-03-01

    Kv11.1 (hERG, KCNH2) is a voltage-gated potassium channel crucial in setting the cardiac rhythm and the electrical behaviour of several non-cardiac cell types. Voltage-dependent gating of Kv11.1 can be reconstructed from non-covalently linked voltage sensing and pore modules (split channels), challenging classical views of voltage-dependent channel activation based on a S4-S5 linker acting as a rigid mechanical lever to open the gate. Progressive displacement of the split position from the end to the beginning of the S4-S5 linker induces an increasing negative shift in activation voltage dependence, a reduced z g value and a more negative ΔG 0 for current activation, an almost complete abolition of the activation time course sigmoid shape and a slowing of the voltage-dependent deactivation. Channels disconnected at the S4-S5 linker near the S4 helix show a destabilization of the closed state(s). Furthermore, the isochronal ion current mode shift magnitude is clearly reduced in the different splits. Interestingly, the progressive modifications of voltage dependence activation gating by changing the split position are accompanied by a shift in the voltage-dependent availability to a methanethiosulfonate reagent of a Cys introduced at the upper S4 helix. Our data demonstrate for the first time that alterations in the covalent connection between the voltage sensor and the pore domains impact on the structural reorganizations of the voltage sensor domain. Also, they support the hypothesis that the S4-S5 linker integrates signals coming from other cytoplasmic domains that constitute either an important component or a crucial regulator of the gating machinery in Kv11.1 and other KCNH channels.

  16. Asymmetric functional contributions of acidic and aromatic side chains in sodium channel voltage-sensor domains

    DEFF Research Database (Denmark)

    Pless, Stephan Alexander; Elstone, Fisal D; Niciforovic, Ana P

    2014-01-01

    largely enigmatic. To this end, natural and unnatural side chain substitutions were made in the S2 hydrophobic core (HC), the extracellular negative charge cluster (ENC), and the intracellular negative charge cluster (INC) of the four VSDs of the skeletal muscle sodium channel isoform (NaV1......Voltage-gated sodium (NaV) channels mediate electrical excitability in animals. Despite strong sequence conservation among the voltage-sensor domains (VSDs) of closely related voltage-gated potassium (KV) and NaV channels, the functional contributions of individual side chains in Nav VSDs remain.......4). The results show that the highly conserved aromatic side chain constituting the S2 HC makes distinct functional contributions in each of the four NaV domains. No obvious cation-pi interaction exists with nearby S4 charges in any domain, and natural and unnatural mutations at these aromatic sites produce...

  17. Applications of passive remote surface acoustic wave sensors in high-voltage systems; Einsatz von passiven funkabfragbaren Oberflaechenwellensensoren in der elektrischen Energietechnik

    Energy Technology Data Exchange (ETDEWEB)

    Teminova, R

    2007-06-29

    Passive remote Surface Acoustic Wave (SAW) sensors have been applied e.g. as temperature, pressure or torque sensors. Their important advantages over standard methods are their passive operating principle, which allows operation without any power supply, as well as the wireless high-frequency signal transmission over distances up to about 10..15 m even through (non metallic) housings. These properties of SAW sensors particularly qualify them for applications in high voltage operational equipment. First experience was gained in a long time field test of surge arrester monitoring based on SAW temperature sensors in a German high-voltage substation. Now, this system has been further developed at Darmstadt University of Technology for other applications, the first of them being an overhead line (OHL) conductor temperature measurement, the second one a temperature monitoring system for of high-voltage disconnectors. After designing and building the sensors, extensive laboratory tests were carried out applying high-voltage, high-current and thermal stress in order to approve the suitability for the intended application. All these tests confirmed the assumption that SAW sensors, due to their passive working principle, are not affected at all by any kind of electrical, magnetic or thermal stress that may occur during service. The complete temperature sensor consists of three parts: a sensor chip, an antenna which receives and transmits the signal from and to the radar unit and a body for installation and for protection against environmental impact. One must find a good compromise between optimizing of thermal, dielectric and high-frequency characteristics and at the same time taking into consideration a simple installation. These requirements on the SAW sensors turned out to be difficult to coordinate. To achieve a high measuring precision is especially difficult. First, a new sensor for OHL application was developed. The OHL conductor temperature sensor had been optimized

  18. Controlled trapping and detection of magnetic particles by a magnetic microactuator and a giant magnetoresistance (GMR) sensor

    KAUST Repository

    Giouroudi, Ioanna

    2014-04-01

    This paper presents the design and testing of an integrated micro-chip for the controlled trapping and detection of magnetic particles (MPs). A unique magnetic micro-actuator consisting of square-shaped conductors is used to manipulate the MPs towards a giant magnetoresistance (GMR) sensing element which rapidly detects the majority of MPs trapped around the square-shaped conductors. The ability to precisely transport a small number of MPs in a controlled manner over long distances by magnetic forces enables the rapid concentration of a majority of MPs to the sensing zone for detection. This is especially important in low concentration samples. The conductors are designed in such a manner so as to increase the capture efficiency as well as the precision and speed of transportation. By switching current to different conductors, MPs can be manipulated and immobilized on the innermost conductor where the GMR sensor is located. This technique rapidly guides the MPs towards the sensing zone. Secondly, for optimum measurement capability with high spatial resolution the GMR sensor is fabricated directly underneath and all along the innermost conductor to detect the stray fields originating from the MPs. Finally, a microfluidic channel is fabricated on top of this micro-chip. Experiments inside the microchannel were carried out and the MPs were successfully trapped at the sensing area. © (2014) Trans Tech Publications.

  19. Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Leuven (Belgium); Marcon, Denis; De Jaeger, Brice; Lin, H. C.; Franco, Jacopo; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan [imec, Kapeldreef 75, 3001 Leuven (Belgium); Bakeroot, Benoit [imec, Kapeldreef 75, 3001 Leuven (Belgium); Centre for Microsystems Technology, Ghent University, 9052 Gent (Belgium); Roelofs, Robin [ASM, Kapeldreef 75, 3001 Leuven (Belgium)

    2015-08-31

    In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress is highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.

  20. Mechanism of electromechanical coupling in voltage-gated potassium channels

    Directory of Open Access Journals (Sweden)

    Rikard eBlunck

    2012-09-01

    Full Text Available Voltage-gated ion channels play a central role in the generation of action potentials in the nervous system. They are selective for one type of ion – sodium, calcium or potassium. Voltage-gated ion channels are composed of a central pore that allows ions to pass through the membrane and four peripheral voltage sensing domains that respond to changes in the membrane potential. Upon depolarization, voltage sensors in voltage-gated potassium channels (Kv undergo conformational changes driven by positive charges in the S4 segment and aided by pairwise electrostatic interactions with the surrounding voltage sensor. Structure-function relations of Kv channels have been investigated in detail, and the resulting models on the movement of the voltage sensors now converge to a consensus; the S4 segment undergoes a combined movement of rotation, tilt and vertical displacement in order to bring 3-4 e+ each through the electric field focused in this region. Nevertheless, the mechanism by which the voltage sensor movement leads to pore opening, the electromechanical coupling, is still not fully understood. Thus, recently, electromechanical coupling in different Kv channels has been investigated with a multitude of techniques including electrophysiology, 3D crystal structures, fluorescence spectroscopy and molecular dynamics simulations. Evidently, the S4-S5 linker, the covalent link between the voltage sensor and pore, plays a crucial role. The linker transfers the energy from the voltage sensor movement to the pore domain via an interaction with the S6 C-termini, which are pulled open during gating. In addition, other contact regions have been proposed. This review aims to provide (i an in-depth comparison of the molecular mechanisms of electromechanical coupling in different Kv channels; (ii insight as to how the voltage sensor and pore domain influence one another; and (iii theoretical predictions on the movement of the cytosolic face of the KV channels

  1. Wireless Power Supply via Coupled Magnetic Resonance for on-line Monitoring Wireless Sensor of High-voltage Electrical Equipment

    DEFF Research Database (Denmark)

    Xingkui, Mao; Qisheng, Huang; Yudi, Xiao

    2016-01-01

    On-line monitoring of high-voltage electrical equipment (HV-EE) aiming to detect faults effectively has become crucial to avoid serious accidents. Moreover, highly reliable power supplies are the key component for the wireless sensors equipped in such on-line monitoring systems. Therefore......, in this paper, the wireless power supply via coupled magnetic resonance (MR-WPS) is proposed for powering the wireless sensor and the associated wireless sensor solution is also proposed. The key specifications of the MR-WPS working in switchgear cabinet with a harsh operation environment are analyzed...... power is able to be delivered to the wireless sensor through the designed MR-WPS, and therefore the theoretical analysis and design is verified....

  2. Enzyme domain affects the movement of the voltage sensor in ascidian and zebrafish voltage-sensing phosphatases.

    Science.gov (United States)

    Hossain, Md Israil; Iwasaki, Hirohide; Okochi, Yoshifumi; Chahine, Mohamed; Higashijima, Shinichi; Nagayama, Kuniaki; Okamura, Yasushi

    2008-06-27

    The ascidian voltage-sensing phosphatase (Ci-VSP) consists of the voltage sensor domain (VSD) and a cytoplasmic phosphatase region that has significant homology to the phosphatase and tensin homolog deleted on chromosome TEN (PTEN). The phosphatase activity of Ci-VSP is modified by the conformational change of the VSD. In many proteins, two protein modules are bidirectionally coupled, but it is unknown whether the phosphatase domain could affect the movement of the VSD in VSP. We addressed this issue by whole-cell patch recording of gating currents from a teleost VSP (Dr-VSP) cloned from Danio rerio expressed in tsA201 cells. Replacement of a critical cysteine residue, in the phosphatase active center of Dr-VSP, by serine sharpened both ON- and OFF-gating currents. Similar changes were produced by treatment with phosphatase inhibitors, pervanadate and orthovanadate, that constitutively bind to cysteine in the active catalytic center of phosphatases. The distinct kinetics of gating currents dependent on enzyme activity were not because of altered phosphatidylinositol 4,5-bisphosphate levels, because the kinetics of gating current did not change by depletion of phosphatidylinositol 4,5-bisphosphate, as reported by coexpressed KCNQ2/3 channels. These results indicate that the movement of the VSD is influenced by the enzymatic state of the cytoplasmic domain, providing an important clue for understanding mechanisms of coupling between the VSD and its effector.

  3. Asymmetric ion trap

    Science.gov (United States)

    Barlow, Stephan E.; Alexander, Michael L.; Follansbee, James C.

    1997-01-01

    An ion trap having two end cap electrodes disposed asymmetrically about a center of a ring electrode. The inner surface of the end cap electrodes are conformed to an asymmetric pair of equipotential lines of the harmonic formed by the application of voltages to the electrodes. The asymmetry of the end cap electrodes allows ejection of charged species through the closer of the two electrodes which in turn allows for simultaneously detecting anions and cations expelled from the ion trap through the use of two detectors charged with opposite polarity.

  4. Simplified two-fluid current–voltage relation for superconductor transition-edge sensors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Tian-Shun; Chen, Jun-Kang [Department of Optics and Optical Engineering, University of Science and Technology of China, Hefei City, Anhui Province 230026 (China); Zhang, Qing-Ya; Li, Tie-Fu; Liu, Jian-She [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China); Chen, Wei, E-mail: weichen@tsinghua.edu.cn [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China); Zhou, Xingxiang, E-mail: xizhou@ustc.edu.cn [Department of Optics and Optical Engineering, University of Science and Technology of China, Hefei City, Anhui Province 230026 (China)

    2013-11-21

    We propose a simplified current–voltage (IV) relation for the analysis and simulation of superconductor transition-edge sensor (TES) circuits. Compared to the conventional approach based on the effective TES resistance, our expression describes the device behavior more thoroughly covering the superconducting, transitional, and normal-state for TES currents in both directions. We show how to use our IV relation to perform small-signal analysis and derive the device's temperature and current sensitivities based on its physical parameters. We further demonstrate that we can use our IV relation to greatly simplify TES device modeling and make SPICE simulation of TES circuits easily accessible. We present some interesting results as examples of valuable simulations enabled by our IV relation. -- Highlights: •We propose an IV relation for superconductor transition-edge sensors (TES). •We derive the dependence of the sensitivity of TES on its physical parameters. •We use our IV relation for SPICE modeling of TES device. •We present simulation results using device model based on our IV relation.

  5. Simplified two-fluid current–voltage relation for superconductor transition-edge sensors

    International Nuclear Information System (INIS)

    Wang, Tian-Shun; Chen, Jun-Kang; Zhang, Qing-Ya; Li, Tie-Fu; Liu, Jian-She; Chen, Wei; Zhou, Xingxiang

    2013-01-01

    We propose a simplified current–voltage (IV) relation for the analysis and simulation of superconductor transition-edge sensor (TES) circuits. Compared to the conventional approach based on the effective TES resistance, our expression describes the device behavior more thoroughly covering the superconducting, transitional, and normal-state for TES currents in both directions. We show how to use our IV relation to perform small-signal analysis and derive the device's temperature and current sensitivities based on its physical parameters. We further demonstrate that we can use our IV relation to greatly simplify TES device modeling and make SPICE simulation of TES circuits easily accessible. We present some interesting results as examples of valuable simulations enabled by our IV relation. -- Highlights: •We propose an IV relation for superconductor transition-edge sensors (TES). •We derive the dependence of the sensitivity of TES on its physical parameters. •We use our IV relation for SPICE modeling of TES device. •We present simulation results using device model based on our IV relation

  6. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

    Science.gov (United States)

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-05-09

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

  7. Electrical trapping mechanism of single-microparticles in a pore sensor

    Directory of Open Access Journals (Sweden)

    Akihide Arima

    2016-11-01

    Full Text Available Nanopore sensing via resistive pulse technique are utilized as a potent tool to characterize physical and chemical property of single –molecules and –particles. In this article, we studied the influence of particle trajectory to the ionic conductance through a pore. We performed the optical/electrical simultaneous sensing of electrophoretic capture dynamics of single-particles at a pore using a microchannel/nanopore system. We detected ionic current drops synchronous to a fluorescently dyed particle being electrophoretically drawn and become immobilized at a pore in the optical imaging. We also identified anomalous trapping events wherein particles were captured at nanoscale pin-holes formed unintentionally in a SiN membrane that gave rise to relatively small current drops. This method is expected to be a useful platform for testing novel nanopore sensor design wherein current behaves in unpredictable manner.

  8. Combinatorial mutagenesis of the voltage-sensing domain enables the optical resolution of action potentials firing at 60 Hz by a genetically encoded fluorescent sensor of membrane potential.

    Science.gov (United States)

    Piao, Hong Hua; Rajakumar, Dhanarajan; Kang, Bok Eum; Kim, Eun Ha; Baker, Bradley J

    2015-01-07

    ArcLight is a genetically encoded fluorescent voltage sensor using the voltage-sensing domain of the voltage-sensing phosphatase from Ciona intestinalis that gives a large but slow-responding optical signal in response to changes in membrane potential (Jin et al., 2012). Fluorescent voltage sensors using the voltage-sensing domain from other species give faster yet weaker optical signals (Baker et al., 2012; Han et al., 2013). Sequence alignment of voltage-sensing phosphatases from different species revealed conserved polar and charged residues at 7 aa intervals in the S1-S3 transmembrane segments of the voltage-sensing domain, suggesting potential coil-coil interactions. The contribution of these residues to the voltage-induced optical signal was tested using a cassette mutagenesis screen by flanking each transmembrane segment with unique restriction sites to allow for the testing of individual mutations in each transmembrane segment, as well as combinations in all four transmembrane segments. Addition of a counter charge in S2 improved the kinetics of the optical response. A double mutation in the S4 domain dramatically reduced the slow component of the optical signal seen in ArcLight. Combining that double S4 mutant with the mutation in the S2 domain yielded a probe with kinetics voltage-sensing domain could potentially lead to fluorescent sensors capable of optically resolving neuronal inhibition and subthreshold synaptic activity. Copyright © 2015 the authors 0270-6474/15/350372-15$15.00/0.

  9. Mapping of Residues Forming the Voltage Sensor of the Voltage-Dependent Anion-Selective Channel

    Science.gov (United States)

    Thomas, Lorie; Blachly-Dyson, Elizabeth; Colombini, Marco; Forte, Michael

    1993-06-01

    Voltage-gated ion-channel proteins contain "voltage-sensing" domains that drive the conformational transitions between open and closed states in response to changes in transmembrane voltage. We have used site-directed mutagenesis to identify residues affecting the voltage sensitivity of a mitochondrial channel, the voltage-dependent anion-selective channel (VDAC). Although charge changes at many sites had no effect, at other sites substitutions that increased positive charge also increased the steepness of voltage dependance and substitutions that decreased positive charge decreased voltage dependance by an appropriate amount. In contrast to the plasma membrane K^+ and Na^+ channels, these residues are distributed over large parts of the VDAC protein. These results have been used to define the conformational transitions that accompany voltage gating of an ion channel. This gating mechanism requires the movement of large portions of the VDAC protein through the membrane.

  10. An Improved Targeted cAMP Sensor to Study the Regulation of Adenylyl Cyclase 8 by Ca2+ Entry through Voltage-Gated Channels

    Science.gov (United States)

    Everett, Katy L.; Cooper, Dermot M. F.

    2013-01-01

    Here we describe an improved sensor with reduced pH sensitivity tethered to adenylyl cyclase (AC) 8. The sensor was used to study cAMP dynamics in the AC8 microdomain of MIN6 cells, a pancreatic β-cell line. In these cells, AC8 was activated by Ca2+ entry through L-type voltage-gated channels following depolarisation. This activation could be reconstituted in HEK293 cells co-expressing AC8 and either the α1C or α1D subunit of L-type voltage-gated Ca2+ channels. The development of this improved sensor opens the door to the study of cAMP microdomains in excitable cells that have previously been challenging due to the sensitivity of fluorescent proteins to pH changes. PMID:24086669

  11. An improved targeted cAMP sensor to study the regulation of adenylyl cyclase 8 by Ca2+ entry through voltage-gated channels.

    Directory of Open Access Journals (Sweden)

    Katy L Everett

    Full Text Available Here we describe an improved sensor with reduced pH sensitivity tethered to adenylyl cyclase (AC 8. The sensor was used to study cAMP dynamics in the AC8 microdomain of MIN6 cells, a pancreatic β-cell line. In these cells, AC8 was activated by Ca(2+ entry through L-type voltage-gated channels following depolarisation. This activation could be reconstituted in HEK293 cells co-expressing AC8 and either the α1C or α1D subunit of L-type voltage-gated Ca(2+ channels. The development of this improved sensor opens the door to the study of cAMP microdomains in excitable cells that have previously been challenging due to the sensitivity of fluorescent proteins to pH changes.

  12. Magneto-mechanical trapping systems for biological target detection

    KAUST Repository

    Li, Fuquan

    2014-03-29

    We demonstrate a magnetic microsystem capable of detecting nucleic acids via the size difference between bare magnetic beads and bead compounds. The bead compounds are formed through linking nonmagnetic beads and magnetic beads by the target nucleic acids. The system comprises a tunnel magneto-resistive (TMR) sensor, a trapping well, and a bead-concentrator. The TMR sensor detects the stray field of magnetic beads inside the trapping well, while the sensor output depends on the number of beads. The size of the bead compounds is larger than that of bare magnetic beads, and fewer magnetic beads are required to fill the trapping well. The bead-concentrator, in turn, is capable of filling the trap in a controlled fashion and so to shorten the assay time. The bead-concentrator includes conducting loops surrounding the trapping well and a conducting line underneath. The central conducting line serves to attract magnetic beads in the trapping well and provides a magnetic field to magnetize them so to make them detectable by the TMR sensor. This system excels by its simplicity in that the DNA is incubated with magnetic and nonmagnetic beads, and the solution is then applied to the chip and analyzed in a single step. In current experiments, a signal-to-noise ratio of 40.3 dB was obtained for a solution containing 20.8 nM of DNA. The sensitivity and applicability of this method can be controlled by the size or concentration of the nonmagnetic bead, or by the dimension of the trapping well.

  13. Magneto-mechanical trapping systems for biological target detection

    International Nuclear Information System (INIS)

    Li, Fuquan; Kodzius, Rimantas; Gooneratne, Chinthaka P.; Foulds, Ian G.; Kosel, Jürgen

    2014-01-01

    We demonstrate a magnetic microsystem capable of detecting nucleic acids via the size difference between bare magnetic beads and bead compounds. The bead compounds are formed through linking nonmagnetic beads and magnetic beads by the target nucleic acids. The system comprises a tunnel magneto-resistive (TMR) sensor, a trapping well, and a bead-concentrator. The TMR sensor detects the stray field of magnetic beads inside the trapping well, while the sensor output depends on the number of beads. The size of the bead compounds is larger than that of bare magnetic beads, and fewer magnetic beads are required to fill the trapping well. The bead-concentrator, in turn, is capable of filling the trap in a controlled fashion and so to shorten the assay time. The bead-concentrator includes conducting loops surrounding the trapping well and a conducting line underneath. The central conducting line serves to attract magnetic beads in the trapping well and provides a magnetic field to magnetize them so to make them detectable by the TMR sensor. This system excels by its simplicity in that the DNA is incubated with magnetic and nonmagnetic beads, and the solution is then applied to the chip and analyzed in a single step. In current experiments, a signal-to-noise ratio of 40.3 dB was obtained for a solution containing 20.8 nM of DNA. The sensitivity and applicability of this method can be controlled by the size or concentration of the nonmagnetic bead, or by the dimension of the trapping well. (author)

  14. External pH modulates EAG superfamily K+ channels through EAG-specific acidic residues in the voltage sensor

    Science.gov (United States)

    Kazmierczak, Marcin; Zhang, Xiaofei; Chen, Bihan; Mulkey, Daniel K.; Shi, Yingtang; Wagner, Paul G.; Pivaroff-Ward, Kendra; Sassic, Jessica K.; Bayliss, Douglas A.

    2013-01-01

    The Ether-a-go-go (EAG) superfamily of voltage-gated K+ channels consists of three functionally distinct gene families (Eag, Elk, and Erg) encoding a diverse set of low-threshold K+ currents that regulate excitability in neurons and muscle. Previous studies indicate that external acidification inhibits activation of three EAG superfamily K+ channels, Kv10.1 (Eag1), Kv11.1 (Erg1), and Kv12.1 (Elk1). We show here that Kv10.2, Kv12.2, and Kv12.3 are similarly inhibited by external protons, suggesting that high sensitivity to physiological pH changes is a general property of EAG superfamily channels. External acidification depolarizes the conductance–voltage (GV) curves of these channels, reducing low threshold activation. We explored the mechanism of this high pH sensitivity in Kv12.1, Kv10.2, and Kv11.1. We first examined the role of acidic voltage sensor residues that mediate divalent cation block of voltage activation in EAG superfamily channels because protons reduce the sensitivity of Kv12.1 to Zn2+. Low pH similarly reduces Mg2+ sensitivity of Kv10.1, and we found that the pH sensitivity of Kv11.1 was greatly attenuated at 1 mM Ca2+. Individual neutralizations of a pair of EAG-specific acidic residues that have previously been implicated in divalent block of diverse EAG superfamily channels greatly reduced the pH response in Kv12.1, Kv10.2, and Kv11.1. Our results therefore suggest a common mechanism for pH-sensitive voltage activation in EAG superfamily channels. The EAG-specific acidic residues may form the proton-binding site or alternatively are required to hold the voltage sensor in a pH-sensitive conformation. The high pH sensitivity of EAG superfamily channels suggests that they could contribute to pH-sensitive K+ currents observed in vivo. PMID:23712551

  15. External pH modulates EAG superfamily K+ channels through EAG-specific acidic residues in the voltage sensor.

    Science.gov (United States)

    Kazmierczak, Marcin; Zhang, Xiaofei; Chen, Bihan; Mulkey, Daniel K; Shi, Yingtang; Wagner, Paul G; Pivaroff-Ward, Kendra; Sassic, Jessica K; Bayliss, Douglas A; Jegla, Timothy

    2013-06-01

    The Ether-a-go-go (EAG) superfamily of voltage-gated K(+) channels consists of three functionally distinct gene families (Eag, Elk, and Erg) encoding a diverse set of low-threshold K(+) currents that regulate excitability in neurons and muscle. Previous studies indicate that external acidification inhibits activation of three EAG superfamily K(+) channels, Kv10.1 (Eag1), Kv11.1 (Erg1), and Kv12.1 (Elk1). We show here that Kv10.2, Kv12.2, and Kv12.3 are similarly inhibited by external protons, suggesting that high sensitivity to physiological pH changes is a general property of EAG superfamily channels. External acidification depolarizes the conductance-voltage (GV) curves of these channels, reducing low threshold activation. We explored the mechanism of this high pH sensitivity in Kv12.1, Kv10.2, and Kv11.1. We first examined the role of acidic voltage sensor residues that mediate divalent cation block of voltage activation in EAG superfamily channels because protons reduce the sensitivity of Kv12.1 to Zn(2+). Low pH similarly reduces Mg(2+) sensitivity of Kv10.1, and we found that the pH sensitivity of Kv11.1 was greatly attenuated at 1 mM Ca(2+). Individual neutralizations of a pair of EAG-specific acidic residues that have previously been implicated in divalent block of diverse EAG superfamily channels greatly reduced the pH response in Kv12.1, Kv10.2, and Kv11.1. Our results therefore suggest a common mechanism for pH-sensitive voltage activation in EAG superfamily channels. The EAG-specific acidic residues may form the proton-binding site or alternatively are required to hold the voltage sensor in a pH-sensitive conformation. The high pH sensitivity of EAG superfamily channels suggests that they could contribute to pH-sensitive K(+) currents observed in vivo.

  16. Chlorine-trapped CVD bilayer graphene for resistive pressure sensor with high detection limit and high sensitivity

    Science.gov (United States)

    Phuong Pham, Viet; Triet Nguyen, Minh; Park, Jin Woo; Kwak, Sung Soo; Nguyen, Dieu Hien Thi; Kyeom Mun, Mu; Danh Phan, Hoang; San Kim, Doo; Kim, Ki Hyun; Lee, Nae-Eung; Yeom, Geun Young

    2017-06-01

    Pressure sensing is one of the key functions for smart electronics. Considerably more effort is required to achieve the fabrication of pressure sensors that can imitate and overcome the sophisticated pressure sensing characteristics in nature and industry, especially in the innovation of materials and structures. Almost all of the pressure sensors reported until now have a high sensitivity at a low-pressure detection limit (type chlorine trap doping in the channel graphene with chlorine radicals without damaging the graphene. This work indicates that the ZGClG channel used for the pressure sensing device could also provide a simple and essential sensing platform for chemical-, medical-, and biological-sensing for future smart electronics.

  17. Symmetric voltage-controlled variable resistance

    Science.gov (United States)

    Vanelli, J. C.

    1978-01-01

    Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.

  18. Active stabilization of ion trap radiofrequency potentials

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, K. G.; Wong-Campos, J. D.; Restelli, A.; Landsman, K. A.; Neyenhuis, B.; Mizrahi, J.; Monroe, C. [Joint Quantum Institute and University of Maryland Department of Physics, College Park, Maryland 20742 (United States)

    2016-05-15

    We actively stabilize the harmonic oscillation frequency of a laser-cooled atomic ion confined in a radiofrequency (rf) Paul trap by sampling and rectifying the high voltage rf applied to the trap electrodes. We are able to stabilize the 1 MHz atomic oscillation frequency to be better than 10 Hz or 10 ppm. This represents a suppression of ambient noise on the rf circuit by 34 dB. This technique could impact the sensitivity of ion trap mass spectrometry and the fidelity of quantum operations in ion trap quantum information applications.

  19. Inverse scaling trends for charge-trapping-induced degradation of FinFETs performance

    OpenAIRE

    Amoroso, Salvatore Maria; Georgiev, Vihar P.; Gerrer, Louis; Towie, Ewan; Wang, Xingsheng; Riddet, Craig; Brown, Andrew Robert; Asenov, Asen

    2014-01-01

    In this paper, we investigate the impact of a single discrete charge trapped at the top oxide interface on the performance of scaled nMOS FinFET transistors. The charge-trapping-induced gate voltage shift is simulated as a function of the device scaling and for several regimes of conduction-from subthreshold to ON-state. Contrary to what is expected for planar MOSFETs, we show that the trap impact decreases with scaling down the FinFET size and the applied gate voltage. By comparing drift-dif...

  20. Direct evidence that scorpion α-toxins (site-3 modulate sodium channel inactivation by hindrance of voltage-sensor movements.

    Directory of Open Access Journals (Sweden)

    Zhongming Ma

    Full Text Available The position of the voltage-sensing transmembrane segment, S4, in voltage-gated ion channels as a function of voltage remains incompletely elucidated. Site-3 toxins bind primarily to the extracellular loops connecting transmembrane helical segments S1-S2 and S3-S4 in Domain 4 (D4 and S5-S6 in Domain 1 (D1 and slow fast-inactivation of voltage-gated sodium channels. As S4 of the human skeletal muscle voltage-gated sodium channel, hNav1.4, moves in response to depolarization from the resting to the inactivated state, two D4S4 reporters (R2C and R3C, Arg1451Cys and Arg1454Cys, respectively move from internal to external positions as deduced by reactivity to internally or externally applied sulfhydryl group reagents, methane thiosulfonates (MTS. The changes in reporter reactivity, when cycling rapidly between hyperpolarized and depolarized voltages, enabled determination of the positions of the D4 voltage-sensor and of its rate of movement. Scorpion α-toxin binding impedes D4S4 segment movement during inactivation since the modification rates of R3C in hNav1.4 with methanethiosulfonate (CH3SO2SCH2CH2R, where R = -N(CH33 (+ trimethylammonium, MTSET and benzophenone-4-carboxamidocysteine methanethiosulfonate (BPMTS were slowed ~10-fold in toxin-modified channels. Based upon the different size, hydrophobicity and charge of the two reagents it is unlikely that the change in reactivity is due to direct or indirect blockage of access of this site to reagent in the presence of toxin (Tx, but rather is the result of inability of this segment to move outward to the normal extent and at the normal rate in the toxin-modified channel. Measurements of availability of R3C to internally applied reagent show decreased access (slower rates of thiol reaction providing further evidence for encumbered D4S4 movement in the presence of toxins consistent with the assignment of at least part of the toxin binding site to the region of D4S4 region of the voltage-sensor

  1. Methods and apparatuses for low-noise magnetic sensors

    KAUST Repository

    Kosel, Jü rgen; Sun, Jian

    2015-01-01

    Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a first voltage lead coupled to the semiconductor layer. In some embodiments, the first voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the conductive layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

  2. Methods and apparatuses for low-noise magnetic sensors

    KAUST Repository

    Kosel, Jurgen

    2015-10-20

    Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a first voltage lead coupled to the semiconductor layer. In some embodiments, the first voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the conductive layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

  3. Charge trapping and carrier transport mechanism in silicon-rich silicon oxynitride

    International Nuclear Information System (INIS)

    Yu Zhenrui; Aceves, Mariano; Carrillo, Jesus; Lopez-Estopier, Rosa

    2006-01-01

    The charge-trapping and carrier transport properties of silicon-rich silicon oxynitride (SRO:N) were studied. The SRO:N films were deposited by low pressure chemical vapor deposition. Infrared (IR) and transmission electron microscopic (TEM) measurements were performed to characterize their structural properties. Capacitance versus voltage and current versus voltage measurements (I-V) were used to study the charge-trapping and carrier transport mechanism. IR and TEM measurements revealed the existence of Si nanodots in SRO:N films. I-V measurements revealed that there are two conduction regimes divided by a threshold voltage V T . When the applied voltage is smaller than V T , the current is dominated by the charge transfer between the SRO:N and substrate; and in this regime only dynamic charging/discharging of the SRO:N layer is observed. When the voltage is larger than V T , the current increases rapidly and is dominated by the Poole-Frenkel mechanism; and in this regime, large permanent trapped charge density is obtained. Nitrogen incorporation significantly reduced the silicon nanodots or defects near the SRO:N/Si interface. However, a significant increase of the density of silicon nanodot in the bulk of the SRO:N layer is obtained

  4. Low-voltage analog front-end processor design for ISFET-based sensor and H+ sensing applications

    Science.gov (United States)

    Chung, Wen-Yaw; Yang, Chung-Huang; Peng, Kang-Chu; Yeh, M. H.

    2003-04-01

    This paper presents a modular-based low-voltage analog-front-end processor design in a 0.5mm double-poly double-metal CMOS technology for Ion Sensitive Field Effect Transistor (ISFET)-based sensor and H+ sensing applications. To meet the potentiometric response of the ISFET that is proportional to various H+ concentrations, the constant-voltage and constant current (CVCS) testing configuration has been used. Low-voltage design skills such as bulk-driven input pair, folded-cascode amplifier, bootstrap switch control circuits have been designed and integrated for 1.5V supply and nearly rail-to-rail analog to digital signal processing. Core modules consist of an 8-bit two-step analog-digital converter and bulk-driven pre-amplifiers have been developed in this research. The experimental results show that the proposed circuitry has an acceptable linearity to 0.1 pH-H+ sensing conversions with the buffer solution in the range of pH2 to pH12. The processor has a potential usage in battery-operated and portable healthcare devices and environmental monitoring applications.

  5. High frequency breakdown voltage

    International Nuclear Information System (INIS)

    Chu, Thanh Duy.

    1992-03-01

    This report contains information about the effect of frequency on the breakdown voltage of an air gap at standard pressure and temperature, 76 mm Hg and O degrees C, respectively. The frequencies of interest are 47 MHz and 60 MHz. Additionally, the breakdown in vacuum is briefly considered. The breakdown mechanism is explained on the basis of collision and ionization. The presence of the positive ions produced by ionization enhances the field in the gap, and thus determines the breakdown. When a low-frequency voltage is applied across the gap, the breakdown mechanism is the same as that caused by the DC or static voltage. However, when the frequency exceeds the first critical value f c , the positive ions are trapped in the gap, increasing the field considerably. This makes the breakdown occur earlier; in other words, the breakdown voltage is lowered. As the frequency increases two decades or more, the second critical frequency, f ce , is reached. This time the electrons start being trapped in the gap. Those electrons that travel multiple times across the gap before reaching the positive electrode result in an enormous number of electrons and positive ions being present in the gap. The result is a further decrease of the breakdown voltage. However, increasing the frequency does not decrease the breakdown voltage correspondingly. In fact, the associated breakdown field intensity is almost constant (about 29 kV/cm).The reason is that the recombination rate increases and counterbalances the production rate, thus reducing the effect of the positive ions' concentration in the gap. The theory of collision and ionization does not apply to the breakdown in vacuum. It seems that the breakdown in vacuum is primarily determined by the irregularities on the surfaces of the electrodes. Therefore, the effect of frequency on the breakdown, if any, is of secondary importance

  6. Voltage-sensing phosphatase: its molecular relationship with PTEN.

    Science.gov (United States)

    Okamura, Yasushi; Dixon, Jack E

    2011-02-01

    Voltage-sensing phosphoinositide phosphatase (VSP) contains voltage sensor and cytoplasmic phosphatase domains. A unique feature of this protein is that depolarization-induced motions of the voltage sensor activate PtdIns(3,4,5)P(3) and PtdIns(4,5)P(2) phosphatase activities. VSP exhibits remarkable structural similarities with PTEN, the phosphatase and tensin homolog deleted on chromosome 10. These similarities include the cytoplasmic phosphatase region, the phosphoinositide binding region, and the putative membrane interacting C2 domain.

  7. Stability of Trapped Electrons in SiO(2)

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.

    1999-01-01

    Thermally stimulated current and capacitance voltage methods are used to investigate the thermal stability of trapped electrons associated with radiation-induced trapped positive charge in metal-oxide-semiconductor capacitors. The density of deeply trapped electrons in radiation-hardened 45 nm oxides exceeds that of shallow electrons by a factor of ∼3 after radiation exposure, and by up to a factor of 10 or more during biased annealing. Shallow electron traps anneal faster than deep traps, and seem to be at least qualitatively consistent with the model of Lelis et al. Deeper traps maybe part of a fundamentally distinct dipole complex, and/or have shifted energy levels that inhibit charge exchange with the Si

  8. Trap-induced photoconductivity in singlet fission pentacene diodes

    Energy Technology Data Exchange (ETDEWEB)

    Qiao, Xianfeng, E-mail: qiaoxianfeng@hotmail.com; Zhao, Chen; Chen, Bingbing; Luan, Lin [WuHan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wu Han 430074 (China)

    2014-07-21

    This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

  9. Effects of trap-assisted tunneling on gate-induced drain leakage in silicon-germanium channel p-type FET for scaled supply voltages

    Science.gov (United States)

    Tiwari, Vishal A.; Divakaruni, Rama; Hook, Terence B.; Nair, Deleep R.

    2016-04-01

    Silicon-germanium is considered as an alternative channel material to silicon p-type FET (pFET) for the development of energy efficient high performance transistors for 28 nm and beyond in a high-k metal gate technology because of its lower threshold voltage and higher mobility. However, gate-induced drain leakage (GIDL) is a concern for high threshold voltage device design because of tunneling at reduced bandgap. In this work, the trap-assisted tunneling and band-to-band tunneling (BTBT) effects on GIDL is analyzed and modeled for SiGe pFETs. Experimental results and Monte Carlo simulation results reveal that the pre-halo germanium pre-amorphization implant used to contain the short channel effects contribute to GIDL at the drain sidewall in addition to GIDL due to BTBT in SiGe devices. The results are validated by comparing the experimental observations with the numerical simulation and a set of calibrated models are used to describe the GIDL mechanisms for various drain and gate bias.

  10. Effect of neutron irradiation on the breakdown voltage of power MOSFET's

    International Nuclear Information System (INIS)

    Hasan, S.M.Y.; Kosier, S.L.; Schrimpf, R.D.; Galloway, K.F.

    1994-01-01

    The effect of neutron irradiation on power metal-oxide-semiconductor field effect transistor (power MOSFET) breakdown voltage has been investigated. Transistors with various breakdown voltage ratings were irradiated in a TRIGA nuclear reactor with cumulative fluence levels up to 5 x 10 14 neutrons/cm 2 (1 MeV equivalent). Noticeable increases in the breakdown voltages are observed in n-type MOSFET's after 10 13 neutrons/cm 2 and in p-type MOSFETs after 10 12 neutrons/cm 2 . An increase in breakdown voltage of as much as 30% is observed after 5 x 10 14 neutrons/cm 2 . The increase in breakdown voltage is attributed to the neutron-irradiation-induced defects which decrease the mean free path and trap majority carriers in the space charge region. The effect of positive trapped oxide charge due to concomitant gamma radiation and the effect of the termination structure on the increase in breakdown voltage are considered. An empirical model is presented to predict the value of the breakdown voltage as a function of neutron fluence

  11. Deconvolution of Voltage Sensor Time Series and Electro-diffusion Modeling Reveal the Role of Spine Geometry in Controlling Synaptic Strength.

    Science.gov (United States)

    Cartailler, Jerome; Kwon, Taekyung; Yuste, Rafael; Holcman, David

    2018-03-07

    Most synaptic excitatory connections are made on dendritic spines. But how the voltage in spines is modulated by its geometry remains unclear. To investigate the electrical properties of spines, we combine voltage imaging data with electro-diffusion modeling. We first present a temporal deconvolution procedure for the genetically encoded voltage sensor expressed in hippocampal cultured neurons and then use electro-diffusion theory to compute the electric field and the current-voltage conversion. We extract a range for the neck resistances of 〈R〉=100±35MΩ. When a significant current is injected in a spine, the neck resistance can be inversely proportional to its radius, but not to the radius square, as predicted by Ohm's law. We conclude that the postsynaptic voltage cannot only be modulated by changing the number of receptors, but also by the spine geometry. Thus, spine morphology could be a key component in determining synaptic transduction and plasticity. Copyright © 2018 Elsevier Inc. All rights reserved.

  12. Theoretical and Experimental Investigation of Particle Trapping via Acoustic Bubbles

    Science.gov (United States)

    Chen, Yun; Fang, Zecong; Merritt, Brett; Saadat-Moghaddam, Darius; Strack, Dillon; Xu, Jie; Lee, Sungyon

    2014-11-01

    One important application of lab-on-a-chip devices is the trapping and sorting of micro-objects, with acoustic bubbles emerging as an effective, non-contact method. Acoustically actuated bubbles are known to exert a secondary radiation force on micro-particles and trap them, when this radiation force exceeds the drag force that acts to keep the particles in motion. In this study, we theoretically evaluate the magnitudes of these two forces for varying actuation frequencies and voltages. In particular, the secondary radiation force is calculated directly from bubble oscillation shapes that have been experimentally measured for varying acoustic parameters. Finally, based on the force estimates, we predict the threshold voltage and frequency for trapping and compare them to the experimental results.

  13. Ultra-low power sensor for autonomous non-invasive voltage measurement in IoT solutions for energy efficiency

    Science.gov (United States)

    Villani, Clemente; Balsamo, Domenico; Brunelli, Davide; Benini, Luca

    2015-05-01

    Monitoring current and voltage waveforms is fundamental to assess the power consumption of a system and to improve its energy efficiency. In this paper we present a smart meter for power consumption which does not need any electrical contact with the load or its conductors, and which can measure both current and voltage. Power metering becomes easier and safer and it is also self-sustainable because an energy harvesting module based on inductive coupling powers the entire device from the output of the current sensor. A low cost 32-bit wireless CPU architecture is used for data filtering and processing, while a wireless transceiver sends data via the IEEE 802.15.4 standard. We describe in detail the innovative contact-less voltage measurement system, which is based on capacitive coupling and on an algorithm that exploits two pre-processing channels. The system self-calibrates to perform precise measurements regardless the cable type. Experimental results demonstrate accuracy in comparison with commercial high-cost instruments, showing negligible deviations.

  14. Traps in Zirconium Alloys Oxide Layers

    Directory of Open Access Journals (Sweden)

    Helmar Frank

    2005-01-01

    Full Text Available Oxide films long-time grown on tubes of three types of zirconium alloys in water and in steam were investigated, by analysing I-V characteristic measured at constant voltages with various temperatures. Using theoretical concepts of Rose [3] and Gould [5], ZryNbSn(Fe proved to have an exponential distribution of trapping centers below the conduction band edge, wheras Zr1Nb and IMP Zry-4 proved to have single energy trap levels.

  15. IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels.

    Science.gov (United States)

    Yokogawa, Sozo; Oshiyama, Itaru; Ikeda, Harumi; Ebiko, Yoshiki; Hirano, Tomoyuki; Saito, Suguru; Oinoue, Takashi; Hagimoto, Yoshiya; Iwamoto, Hayato

    2017-06-19

    We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations of semi-infinite thick c-Si having 2D IPAs on its surface whose pitches over 400 nm shows more than 30% improvement of light absorption at λ = 850 nm and the maximum enhancement of 43% with the 540 nm pitch at the wavelength is confirmed. A prototype BI-CIS sample with pixel size of 1.2 μm square containing 400 nm pitch IPAs shows 80% sensitivity enhancement at λ = 850 nm compared to the reference sample with flat surface. This is due to diffraction with the IPA and total reflection at the pixel boundary. The NIR images taken by the demo camera equip with a C-mount lens show 75% sensitivity enhancement in the λ = 700-1200 nm wavelength range with negligible spatial resolution degradation. Light trapping CIS pixel technology promises to improve NIR sensitivity and appears to be applicable to many different image sensor applications including security camera, personal authentication, and range finding Time-of-Flight camera with IR illuminations.

  16. Estimation of the spatial distribution of traps using space-charge-limited current measurements in an organic single crystal

    KAUST Repository

    Dacuña, Javier

    2012-09-06

    We used a mobility edge transport model and solved the drift-diffusion equation to characterize the space-charge-limited current of a rubrene single-crystal hole-only diode. The current-voltage characteristics suggest that current is injection-limited at high voltage when holes are injected from the bottom contact (reverse bias). In contrast, the low-voltage regime shows that the current is higher when holes are injected from the bottom contact as compared to hole injection from the top contact (forward bias), which does not exhibit injection-limited current in the measured voltage range. This behavior is attributed to an asymmetric distribution of trap states in the semiconductor, specifically, a distribution of traps located near the top contact. Accounting for a localized trap distribution near the contact allows us to reproduce the temperature-dependent current-voltage characteristics in forward and reverse bias simultaneously, i.e., with a single set of model parameters. We estimated that the local trap distribution contains 1.19×1011 cm -2 states and decays as exp(-x/32.3nm) away from the semiconductor-contact interface. The local trap distribution near one contact mainly affects injection from the same contact, hence breaking the symmetry in the charge transport. The model also provides information of the band mobility, energy barrier at the contacts, and bulk trap distribution with their corresponding confidence intervals. © 2012 American Physical Society.

  17. Engineering of a genetically encodable fluorescent voltage sensor exploiting fast Ci-VSP voltage-sensing movements

    DEFF Research Database (Denmark)

    Lundby, Alicia; Mutoh, Hiroki; Dimitrov, Dimitar

    2008-01-01

    Ci-VSP contains a voltage-sensing domain (VSD) homologous to that of voltage-gated potassium channels. Using charge displacement ('gating' current) measurements we show that voltage-sensing movements of this VSD can occur within 1 ms in mammalian membranes. Our analysis lead to development...

  18. A biodetection method using magnetic particles and micro traps

    KAUST Repository

    Li, Fuquan

    2012-03-09

    The general working principle of magnetoresistive sensors for biological applications is to specifically attach bioanalytesto magnetic particles and then detect the particles that are immobilized on the sensor surface. The immobilization of the particles on the sensor surface commonly uses biomolecular interactions, e.g., antigen-antibody. Thus, the sensor surface needs to be functionalized via biological treatments in order to capture certain bioanalytes. In the presented work, a new method is proposed, which does not rely on functionalization of the sensor surface. Current carrying microstructures in combination with mechanical micro traps are used to immobilize magnetic particles. Analyte detection is based on the difference in size between bare magnetic particles and particles with analyte attached, which causes a different number of particles to be captured in the micro traps.

  19. Sensing voltage across lipid membranes

    Science.gov (United States)

    Swartz, Kenton J.

    2009-01-01

    The detection of electrical potentials across lipid bilayers by specialized membrane proteins is required for many fundamental cellular processes such as the generation and propagation of nerve impulses. These membrane proteins possess modular voltage-sensing domains, a notable example being the S1-S4 domains of voltage-activated ion channels. Ground-breaking structural studies on these domains explain how voltage sensors are designed and reveal important interactions with the surrounding lipid membrane. Although further structures are needed to fully understand the conformational changes that occur during voltage sensing, the available data help to frame several key concepts that are fundamental to the mechanism of voltage sensing. PMID:19092925

  20. Beyond voltage-gated ion channels: Voltage-operated membrane proteins and cellular processes.

    Science.gov (United States)

    Zhang, Jianping; Chen, Xingjuan; Xue, Yucong; Gamper, Nikita; Zhang, Xuan

    2018-04-18

    Voltage-gated ion channels were believed to be the only voltage-sensitive proteins in excitable (and some non-excitable) cells for a long time. Emerging evidence indicates that the voltage-operated model is shared by some other transmembrane proteins expressed in both excitable and non-excitable cells. In this review, we summarize current knowledge about voltage-operated proteins, which are not classic voltage-gated ion channels as well as the voltage-dependent processes in cells for which single voltage-sensitive proteins have yet to be identified. Particularly, we will focus on the following. (1) Voltage-sensitive phosphoinositide phosphatases (VSP) with four transmembrane segments homologous to the voltage sensor domain (VSD) of voltage-gated ion channels; VSPs are the first family of proteins, other than the voltage-gated ion channels, for which there is sufficient evidence for the existence of the VSD domain; (2) Voltage-gated proton channels comprising of a single voltage-sensing domain and lacking an identified pore domain; (3) G protein coupled receptors (GPCRs) that mediate the depolarization-evoked potentiation of Ca 2+ mobilization; (4) Plasma membrane (PM) depolarization-induced but Ca 2+ -independent exocytosis in neurons. (5) Voltage-dependent metabolism of phosphatidylinositol 4,5-bisphosphate (PtdIns[4,5]P 2 , PIP 2 ) in the PM. These recent discoveries expand our understanding of voltage-operated processes within cellular membranes. © 2018 Wiley Periodicals, Inc.

  1. Use of multi-functional flexible micro-sensors for in situ measurement of temperature, voltage and fuel flow in a proton exchange membrane fuel cell.

    Science.gov (United States)

    Lee, Chi-Yuan; Chan, Pin-Cheng; Lee, Chung-Ju

    2010-01-01

    Temperature, voltage and fuel flow distribution all contribute considerably to fuel cell performance. Conventional methods cannot accurately determine parameter changes inside a fuel cell. This investigation developed flexible and multi-functional micro sensors on a 40 μm-thick stainless steel foil substrate by using micro-electro-mechanical systems (MEMS) and embedded them in a proton exchange membrane fuel cell (PEMFC) to measure the temperature, voltage and flow. Users can monitor and control in situ the temperature, voltage and fuel flow distribution in the cell. Thereby, both fuel cell performance and lifetime can be increased.

  2. Electrical characterization of FBK small-pitch 3D sensors after γ-ray, neutron and proton irradiations

    Science.gov (United States)

    Dalla Betta, G.-F.; Boscardin, M.; Hoeferkamp, M.; Mendicino, R.; Seidel, S.; Sultan, D. M. S.

    2017-11-01

    In view of applications in the tracking detectors at the High Luminosity LHC (HL-LHC), we have developed a new generation of 3D pixel sensors featuring small-pitch (50 × 50 or 25 × 100 μ m2) and thin active layer (~ 100 μ m). Owing to the very short inter-electrode distance (~ 30 μ m), charge trapping effects can be strongly mitigated, making these sensors extremely radiation hard. However, the downscaled sensor structure also lends itself to high electric fields as the bias voltage is increased, motivating investigation of leakage current increase in order to prevent premature electrical breakdown due to impact ionization. In order to assess the characteristics of heavily irradiated samples, using 3D diodes as test devices, we have carried out a dedicated campaign that included several irradiations (γ -rays, neutrons, and protons) at different facilities. In this paper, we report on the electrical characterization of a subset of the irradiated samples, also in comparison to their pre-irradiation properties. Results demonstrate that hadron irradiated devices can be safely operated at a voltage high enough to allow for full depletion (hence high efficiency) also at the maximum fluence foreseen at the HL-LHC.

  3. Fast and slow border traps in MOS devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.

    1996-01-01

    Convergent lines of evidence are reviewed which show that near-interfacial oxide traps (border traps) that exchange charge with the Si can strongly affect the performance, radiation response, and long-term reliability of MOS devices. Observable effects of border traps include capacitance-voltage (C-V) hysteresis, enhanced l/f noise, compensation of trapped holes, and increased thermally stimulated current in MOS capacitors. Effects of faster (switching times between ∼10 -6 s and ∼1 s) and slower (switching times greater than ∼1 s) border traps have been resolved via a dual-transistor technique. In conjunction with studies of MOS electrical response, electron paramagnetic resonance and spin dependent recombination studies suggest that E' defects (trivalent Si centers in SiO 2 associated with O vacancies) can function as border traps in MOS devices exposed to ionizing radiation or high-field stress. Hydrogen-related centers may also be border traps

  4. Calibration of the ISOLDE acceleration voltage using a high-precision voltage divider and applying collinear fast beam laser spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Krieger, A., E-mail: kriegea@uni-mainz.d [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); Geppert, Ch. [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, 64291 Darmstadt (Germany); Catherall, R. [CERN, CH-1211 Geneve 23 (Switzerland); Hochschulz, F. [Institut fuer Kernphysik, Universitaet Muenster, 48149 Muenster (Germany); Kraemer, J.; Neugart, R. [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); Rosendahl, S. [Institut fuer Kernphysik, Universitaet Muenster, 48149 Muenster (Germany); Schipper, J.; Siesling, E. [CERN, CH-1211 Geneve 23 (Switzerland); Weinheimer, Ch. [Institut fuer Kernphysik, Universitaet Muenster, 48149 Muenster (Germany); Yordanov, D.T. [Max-Planck-Institut fuer Kernphysik, 69117 Heidelberg (Germany); Noertershaeuser, W. [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, 64291 Darmstadt (Germany)

    2011-03-11

    A high-voltage divider with accuracy at the ppm level and collinear laser spectroscopy were used to calibrate the high-voltage installation at the radioactive ion beam facility ISOLDE at CERN. The accurate knowledge of this voltage is particularly important for collinear laser spectroscopy measurements. Beam velocity measurements using frequency-comb based collinear laser spectroscopy agree with the new calibration. Applying this, one obtains consistent results for isotope shifts of stable magnesium isotopes measured using collinear spectroscopy and laser spectroscopy on laser-cooled ions in a trap. The long-term stability and the transient behavior during recovery from a voltage dropout were investigated for the different power supplies currently applied at ISOLDE.

  5. Simulation of trapping properties of high κ material as the charge storage layer for flash memory application

    International Nuclear Information System (INIS)

    Yeo, Yee Ngee; Wang Yingqian; Samanta, Santanu Kumar; Yoo, Won Jong; Samudra, Ganesh; Gao, Dongyue; Chong, Chee Ching

    2006-01-01

    We investigated the trapping properties of high κ material as the charge storage layer in non-volatile flash memory devices using a two-dimensional device simulator, Medici. The high κ material is sandwiched between two silicon oxide layers, resulting in the Silicon-Oxide-High κ-Oxide-Silicon (SOHOS) structure. The trap energy levels of the bulk electron traps in high κ material were determined. The programming and erasing voltage and time using Fowler Nordheim tunneling were estimated by simulation. The effect of deep level traps on erasing was investigated. Also, the effect of bulk traps density, thickness of block oxide and thickness of high κ material on the threshold voltage of the device was simulated

  6. Influence of transfer gate design and bias on the radiation hardness of pinned photodiode CMOS image sensors

    International Nuclear Information System (INIS)

    Goiffon, V.; Estribeau, M.; Cervantes, P.; Molina, R.; Magnan, P.; Gaillardin, M.

    2014-01-01

    The effects of Cobalt 60 gamma-ray irradiation on pinned photodiode (PPD) CMOS image sensors (CIS) are investigated by comparing the total ionizing dose (TID) response of several transfer gate (TG) and PPD designs manufactured using a 180 nm CIS process. The TID induced variations of charge transfer efficiency (CTE), pinning voltage, equilibrium full well capacity (EFWC), full well capacity (FWC) and dark current measured on the different pixel designs lead to the conclusion that only three degradation sources are responsible for all the observed radiation effects: the pre-metal dielectric (PMD) positive trapped charge, the TG sidewall spacer positive trapped charge and, with less influence, the TG channel shallow trench isolation (STI) trapped charge. The different FWC evolutions with TID presented here are in very good agreement with a recently proposed analytical model. This work also demonstrates that the peripheral STI is not responsible for the observed degradations and thus that the enclosed layout TG design does not improve the radiation hardness of PPD CIS. The results of this study also lead to the conclusion that the TG OFF voltage bias during irradiation has no influence on the radiation effects. Alternative design and process solutions to improve the radiation hardness of PPD CIS are discussed. (authors)

  7. Optimization of Pockels electric field in transverse modulated optical voltage sensor

    Science.gov (United States)

    Huang, Yifan; Xu, Qifeng; Chen, Kun-Long; Zhou, Jie

    2018-05-01

    This paper investigates the possibilities of optimizing the Pockels electric field in a transverse modulated optical voltage sensor with a spherical electrode structure. The simulations show that due to the edge effect and the electric field concentrations and distortions, the electric field distributions in the crystal are non-uniform. In this case, a tiny variation in the light path leads to an integral error of more than 0.5%. Moreover, a 2D model cannot effectively represent the edge effect, so a 3D model is employed to optimize the electric field distributions. Furthermore, a new method to attach a quartz crystal to the electro-optic crystal along the electric field direction is proposed to improve the non-uniformity of the electric field. The integral error is reduced therefore from 0.5% to 0.015% and less. The proposed method is simple, practical and effective, and it has been validated by numerical simulations and experimental tests.

  8. Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT

    Energy Technology Data Exchange (ETDEWEB)

    Kim, J. J.; Lim, J. H.; Yang, J. W. [Chonbuk National University, Jeonju (Korea, Republic of); Stanchina, W. [University of Pittsburgh, Pittsburgh, PA (United States)

    2014-08-15

    The negative charging effect of surface traps on the gate leakage current of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. The gate leakage current could be decreased by two orders of magnitude by using a photo-electrochemical process to treat of the source and the drain region, but current flowed into the gate even at a negative voltage in a limited region when the measurement was executed with a gate voltage sweep from negative to positive voltage. Also the electrical characteristics of the HEMT were degraded by pulsed operation of the gate. Traps newly generated on the surface were regarded as sources for the current that flowed against the applied voltage, and the number of traps was estimated. Also, a slow transient in the drain current was confirmed based on the results of delayed sweep measurements.

  9. Effect of trapped electrons on the transient current density and luminance of organic light-emitting diode

    Science.gov (United States)

    Lee, Jiun-Haw; Chen, Chia-Hsun; Lin, Bo-Yen; Shih, Yen-Chen; Lin, King-Fu; Wang, Leeyih; Chiu, Tien-Lung; Lin, Chi-Feng

    2018-04-01

    Transient current density and luminance from an organic light-emitting diode (OLED) driven by voltage pulses were investigated. Waveforms with different repetition rate, duty cycle, off-period, and on-period were used to study the injection and transport characteristics of electron and holes in an OLED under pulse operation. It was found that trapped electrons inside the emitting layer (EML) and the electron transporting layer (ETL) material, tris(8-hydroxyquinolate)aluminum (Alq3) helped for attracting the holes into the EML/ETL and reducing the driving voltage, which was further confirmed from the analysis of capacitance-voltage and displacement current measurement. The relaxation time and trapped filling time of the trapped electrons in Alq3 layer were ~200 µs and ~600 µs with 6 V pulse operation, respectively.

  10. Formation of oxide-trapped charges in 6H-SiC MOS structures

    Energy Technology Data Exchange (ETDEWEB)

    Yoshikawa, Masahito; Ohshima, Takeshi; Itoh, Hisayoshi; Nashiyama, Isamu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment; Okumura, Hajime; Yoshida, Sadafumi

    1997-03-01

    The silicon and the carbon faces of hexagonal silicon carbide (6H-SiC) substrates were oxidized pyrogenically at 1100degC, and the metal-oxide-semiconductor structures were formed on these faces. The MOS capacitors developed using the silicon and the carbon faces were irradiated with {sup 60}Co gamma-rays under argon atmosphere at room temperature. The bias voltages with the different polarity were applied to the gate electrode during irradiation to examine the formation mechanisms of the trapped charges in the oxides of these MOS capacitors. The amount of the trapped charges in the oxide were obtained from capacitance pulse voltage characteristics. The generation of the trapped charges are affects with not only the absorbed dose but also the bias polarity applied to the gate electrodes during irradiation. The formation mechanisms of the trapped charges in the oxides were estimated in conjunction with the surface orientation of 6H-SiC substrates. (author)

  11. Development of TGS2611 methane sensor and SHT11 humidity and temperature sensor for measuring greenhouse gas on peatlands in south kalimantan, indonesia

    Science.gov (United States)

    Sugriwan, I.; Soesanto, O.

    2017-05-01

    The research was focused on development of data acquisition system to monitor the content of methane, relative humidity and temperature on peatlands in South Kalimantan, Indonesia. Methane is one of greenhouse gases that emitted from peatlands; while humidity and temperature are important parameters of microclimate on peatlands. The content of methane, humidity and temperature are three parameters were monitored digitally, real time, continuously and automatically record by data acquisition systems that interfaced to the personal computer. The hardware of data acquisition system consists of power supply unit, TGS2611 methane gas sensor, SHT11 humidity and temperature sensors, voltage follower, ATMega8535 microcontroller, 16 × 2 LCD character and personal computer. ATMega8535 module is a device to manage all part in measuring instrument. The software which is responsible to take sensor data, calculate characteristic equation and send data to 16 × 2 LCD character are Basic Compiler. To interface between measuring instrument and personal computer is maintained by Delphi 7. The result of data acquisition showed on 16 × 2 LCD characters, PC monitor and database with developed by XAMPP. Methane, humidity, and temperature which release from peatlands are trapped by Closed-Chamber Measurement with dimension 60 × 50 × 40 cm3. TGS2611 methane gas sensor and SHT11 humidity and temperature sensor are calibrated to determine transfer function used to data communication between sensors and microcontroller and integrated into ATMega8535 Microcontroller. Calculation of RS and RL of TGS2611 methane gas sensor refer to data sheet and obtained respectively 1360 ohm and 905 ohm. The characteristic equation of TGS2611 satisfies equation VRL = 0.561 ln n - 2.2641 volt, with n is a various concentrations and VRL in volt. The microcontroller maintained the voltage signal than interfaced it to liquid crystal displays and personal computer (laptop) to display result of the measurement

  12. Development of TGS2611 methane sensor and SHT11 humidity and temperature sensor for measuring greenhouse gas on peatlands in South Kalimantan, indonesia

    International Nuclear Information System (INIS)

    Sugriwan, I; Soesanto, O

    2017-01-01

    The research was focused on development of data acquisition system to monitor the content of methane, relative humidity and temperature on peatlands in South Kalimantan, Indonesia. Methane is one of greenhouse gases that emitted from peatlands; while humidity and temperature are important parameters of microclimate on peatlands. The content of methane, humidity and temperature are three parameters were monitored digitally, real time, continuously and automatically record by data acquisition systems that interfaced to the personal computer. The hardware of data acquisition system consists of power supply unit, TGS2611 methane gas sensor, SHT11 humidity and temperature sensors, voltage follower, ATMega8535 microcontroller, 16 × 2 LCD character and personal computer. ATMega8535 module is a device to manage all part in measuring instrument. The software which is responsible to take sensor data, calculate characteristic equation and send data to 16 × 2 LCD character are Basic Compiler. To interface between measuring instrument and personal computer is maintained by Delphi 7. The result of data acquisition showed on 16 × 2 LCD characters, PC monitor and database with developed by XAMPP. Methane, humidity, and temperature which release from peatlands are trapped by Closed-Chamber Measurement with dimension 60 × 50 × 40 cm 3 . TGS2611 methane gas sensor and SHT11 humidity and temperature sensor are calibrated to determine transfer function used to data communication between sensors and microcontroller and integrated into ATMega8535 Microcontroller. Calculation of RS and RL of TGS2611 methane gas sensor refer to data sheet and obtained respectively 1360 ohm and 905 ohm. The characteristic equation of TGS2611 satisfies equation V RL = 0.561 ln n – 2.2641 volt, with n is a various concentrations and V RL in volt. The microcontroller maintained the voltage signal than interfaced it to liquid crystal displays and personal computer (laptop) to display result of the

  13. S1 constrains S4 in the voltage sensor domain of Kv7.1 K+ channels.

    Directory of Open Access Journals (Sweden)

    Yoni Haitin

    Full Text Available Voltage-gated K(+ channels comprise a central pore enclosed by four voltage-sensing domains (VSDs. While movement of the S4 helix is known to couple to channel gate opening and closing, the nature of S4 motion is unclear. Here, we substituted S4 residues of Kv7.1 channels by cysteine and recorded whole-cell mutant channel currents in Xenopus oocytes using the two-electrode voltage-clamp technique. In the closed state, disulfide and metal bridges constrain residue S225 (S4 nearby C136 (S1 within the same VSD. In the open state, two neighboring I227 (S4 are constrained at proximity while residue R228 (S4 is confined close to C136 (S1 of an adjacent VSD. Structural modeling predicts that in the closed to open transition, an axial rotation (approximately 190 degrees and outward translation of S4 (approximately 12 A is accompanied by VSD rocking. This large sensor motion changes the intra-VSD S1-S4 interaction to an inter-VSD S1-S4 interaction. These constraints provide a ground for cooperative subunit interactions and suggest a key role of the S1 segment in steering S4 motion during Kv7.1 gating.

  14. Detecting yocto (10-24) newton forces with trapped ions

    CSIR Research Space (South Africa)

    Uys, H

    2010-09-01

    Full Text Available This article reports on a calibrated measurement of 174 Yoctonewton using a cloud of 60 9 Be+ ion confined in a Penning ion trap. These measurements suggest that ion traps may form the basis of a new class of ultrasensitive deployable force sensors....

  15. Calibration of the ISOLDE acceleration voltage using a high-precision voltage divider and applying collinear fast beam laser spectroscopy

    CERN Document Server

    Krieger, A.; Catherall, R.; Hochschulz, F.; Kramer, J.; Neugart, R.; Rosendahl, S.; Schipper, J.; Siesling, E.; Weinheimer, Ch.; Yordanov, D.T.; Nortershauser, W.

    2011-01-01

    A high-voltage divider with accuracy at the ppm level and collinear laser spectroscopy were used to calibrate the highvoltage installation at the radioactive ion beam facility ISOLDE at CERN. The accurate knowledge of this voltage is particularly important for collinear laser spectroscopy measurements. Beam velocity measurements using frequencycomb based collinear laser spectroscopy agree with the new calibration. Applying this, one obtains consistent results for isotope shifts of stable magnesium isotopes measured using collinear spectroscopy and laser spectroscopy on laser-cooled ions in a trap. The long-term stability and the transient behavior during recovery from a voltage dropout were investigated for the different power supplies currently applied at ISOLDE.

  16. Multiple-trapping in pentacene field-effect transistors with a nanoparticles self-assembled monolayer

    Directory of Open Access Journals (Sweden)

    Keanchuan Lee

    2012-06-01

    Full Text Available A silver nanoparticles self-assembled monolayer (SAM was incorporated in pentacene field-effect transistor and its effects on the carrier injection and transport were investigated using the current-voltage (I − V and impedance spectroscopy (IS measurements. The I − V results showed that there was a significant negative shift of the threshold voltage, indicating the hole trapping inside the devices with about two orders higher in the contact resistance and an order lower in the effective mobility when a SAM was introduced. The IS measurements with the simulation using a Maxwell-Wagner equivalent circuit model revealed the existence of multiple trapping states for the devices with NPs, while the devices without NPs exhibited only a single trap state.

  17. Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode

    International Nuclear Information System (INIS)

    Tyagi, Manisha; Tomar, Monika; Gupta, Vinay

    2015-01-01

    Highlights: • p-NiO/n-ZnO heterojunction diode with enhanced junction parameters has been prepared. • Temperature dependent I–V throw insight into the involved conduction mechanism. • SCLC with exponential trap distribution was found to be the dominant mechanism. • C–V measurement at different frequencies support the presence of traps. - Abstract: The development of short-wavelength p–n junction is essentially important for the realization of transparent electronics for next-generation optoelectronic devices. In the present work, a p–n heterojunction diode based on p-NiO/n-ZnO has been prepared under the optimised growth conditions exhibiting improved electrical and junction parameters. The fabricated heterojunction gives typical current–voltage (I–V) characteristics with good rectifying behaviour (rectification ratio ≈ 10 4 at 2 V). The temperature dependent current–voltage characteristics of heterojunction diode have been studied and origin of conduction mechanism is identified. The space-charge limited conduction with exponential trap distribution having deep level trap is found to be the dominant conduction mechanism in the fabricated p–n heterojunction diode. The conduction and valence band discontinuities for NiO/ZnO heterostructure have been determined from the capacitance–voltage (C–V) measurements

  18. High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    Science.gov (United States)

    Shimer, Daniel W.; Lange, Arnold C.

    1995-01-01

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  19. High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    Science.gov (United States)

    Shimer, D.W.; Lange, A.C.

    1995-05-23

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

  20. The effect of interface trapped charges in DMG-S-SOI MOSFET: a perspective study

    International Nuclear Information System (INIS)

    Mohapatra, S K; Pradhan, K P; Sahu, P K; Pati, G S; Kumar, M R

    2014-01-01

    In this paper, the existing two-dimensional (2D) threshold voltage model for a dual material gate fully depleted strained silicon on insulator (DMG-FD-S-SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is modified by considering the interface trapped charge effects. The interface trapped charge is a common phenomenon, and this charge cannot be neglected in nanoscale devices. For finding out the surface potential, parabolic approximation has been utilized and the virtual cathode potential method is used to formulate the threshold voltage. The developed threshold voltage model incorporates both positive as well as negative interface charges. Finally, validity of the presented model is verified with 2D device simulator Sentaurus™. (paper)

  1. The effect of interface trapped charges in DMG-S-SOI MOSFET: a perspective study

    Science.gov (United States)

    Mohapatra, S. K.; Pradhan, K. P.; Sahu, P. K.; Pati, G. S.; Kumar, M. R.

    2014-12-01

    In this paper, the existing two-dimensional (2D) threshold voltage model for a dual material gate fully depleted strained silicon on insulator (DMG-FD-S-SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is modified by considering the interface trapped charge effects. The interface trapped charge is a common phenomenon, and this charge cannot be neglected in nanoscale devices. For finding out the surface potential, parabolic approximation has been utilized and the virtual cathode potential method is used to formulate the threshold voltage. The developed threshold voltage model incorporates both positive as well as negative interface charges. Finally, validity of the presented model is verified with 2D device simulator Sentaurus™.

  2. Rapid Cellular Phenotyping of Human Pluripotent Stem Cell-Derived Cardiomyocytes using a Genetically Encoded Fluorescent Voltage Sensor

    Directory of Open Access Journals (Sweden)

    Jordan S. Leyton-Mange

    2014-02-01

    Full Text Available In addition to their promise in regenerative medicine, pluripotent stem cells have proved to be faithful models of many human diseases. In particular, patient-specific stem cell-derived cardiomyocytes recapitulate key features of several life-threatening cardiac arrhythmia syndromes. For both modeling and regenerative approaches, phenotyping of stem cell-derived tissues is critical. Cellular phenotyping has largely relied upon expression of lineage markers rather than physiologic attributes. This is especially true for cardiomyocytes, in part because electrophysiological recordings are labor intensive. Likewise, most optical voltage indicators suffer from phototoxicity, which damages cells and degrades signal quality. Here we present the use of a genetically encoded fluorescent voltage indicator, ArcLight, which we demonstrate can faithfully report transmembrane potentials in human stem cell-derived cardiomyocytes. We demonstrate the application of this fluorescent sensor in high-throughput, serial phenotyping of differentiating cardiomyocyte populations and in screening for drug-induced cardiotoxicity.

  3. Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Shaneyfelt, M.R.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

    1998-02-01

    Capacitance-voltage and thermally-stimulated-current techniques are used to estimate trapped hole and electron densities in MOS oxides as functions of irradiation and isochronal anneal temperature. Trapped-charge annealing and compensation effects are discussed

  4. Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics.

    Science.gov (United States)

    Nugraha, Mohamad I; Häusermann, Roger; Watanabe, Shun; Matsui, Hiroyuki; Sytnyk, Mykhailo; Heiss, Wolfgang; Takeya, Jun; Loi, Maria A

    2017-02-08

    We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasing trap DOS close to the lowest unoccupied molecular orbital (LUMO) of the QDs. In addition, this increase is also consistently followed by broadening of the trap DOS. We rationalize that the increase and broadening of the spectral trap distribution originate from dipolar disorder as well as polaronic interactions, which are appearing at strong dielectric polarization. Interestingly, the increased polaron-induced traps do not show any negative effect on the charge carrier mobility in our QD devices at the highest applied gate voltage, giving the possibility to fabricate efficient low-voltage QD devices without suppressing carrier transport.

  5. Chemical characterization of microparticles by laser ablation in an ion trap mass spectrometer

    International Nuclear Information System (INIS)

    Dale, J.M.; Whitten, W.B.; Ramsey, J.M.

    1991-01-01

    We are developing a new technique for the chemical characterization of microparticles based upon the use of electrodynamic traps. The electrodynamic trap has achieved widespread use in the mass spectrometry community in the form of the ion trap mass spectrometer or quadrupole ion trap. Small macroscopic particles can be confined or leviated within the electrode structure of a three-dimensional quadrupole electrodynamic trap in the same way as fundamental charges or molecular ions by using a combination of ac and dc potentials. Our concept is to use the same electrode structure to perform both microparticle levitation and ion trapping/mass analysis. The microparticle will first be trapped and spatially stabilized within the trap for characterization by optical probes, i.e., absorption, fluorescence, or Raman spectroscopy. After the particle has been optically characterized, it is further characterized using mass spectrometry. Ions are generated from the particle surface using laser ablation or desorption. The characteristics of the applied voltages are changed to trap the ions formed by the laser with the ions subsequently mass analyzed. The work described in this paper focuses on the ability to perform laser desorption experiments on microparticles contained within the ion trap. Laser desorption has previously been demonstrated in ion trap devices by applying the sample to a probe which is inserted so as to place the sample at the surface of the ring electrode. Our technique requires the placement of a microparticle in the center of the trap. Our initial experiments have been performed on falling microparticles rather than levitated particles to eliminate voltage switching requirements when changing from particle to ion trapping modes

  6. Modular chemiresistive sensor

    Energy Technology Data Exchange (ETDEWEB)

    Alam, Maksudul M.; Sampathkumaran, Uma

    2018-02-20

    The present invention relates to a modular chemiresistive sensor. In particular, a modular chemiresistive sensor for hypergolic fuel and oxidizer leak detection, carbon dioxide monitoring and detection of disease biomarkers. The sensor preferably has two gold or platinum electrodes mounted on a silicon substrate where the electrodes are connected to a power source and are separated by a gap of 0.5 to 4.0 .mu.M. A polymer nanowire or carbon nanotube spans the gap between the electrodes and connects the electrodes electrically. The electrodes are further connected to a circuit board having a processor and data storage, where the processor can measure current and voltage values between the electrodes and compare the current and voltage values with current and voltage values stored in the data storage and assigned to particular concentrations of a pre-determined substance such as those listed above or a variety of other substances.

  7. Alpha-Particle Gas-Pressure Sensor

    Science.gov (United States)

    Buehler, M. C.; Bell, L. D.; Hecht, M. H.

    1996-01-01

    An approximate model was developed to establish design curves for the saturation region and a more complete model developed to characterize the current-voltage curves for an alpha-particle pressure sensor. A simple two-parameter current-voltage expression was developed to describe the dependence of the ion current on pressure. The parameters are the saturation-current pressure coefficient and mu/D, the ion mobility/diffusion coefficient. The sensor is useful in the pressure range between 0.1 and 1000 mb using a 1 - mu Ci(241) Am source. Experimental results, taken between 1 and up to 200 mb, show the sensor operates with an anode voltage of 5 V and a sensitivity of 20 fA/mb in nitrogen.

  8. Fiber-optic voltage measuring system

    Science.gov (United States)

    Ye, Miaoyuan; Nie, De-Xin; Li, Yan; Peng, Yu; Lin, Qi-Qing; Wang, Jing-Gang

    1993-09-01

    A new fibre optic voltage measuring system has been developed based on the electrooptic effect of bismuth germanium oxide (Bi4Ge3O12)crystal. It uses the LED as the light source. The light beam emitted from the light source is transmitted to the sensor through the optic fibre and the intensity of the output beam is changed by the applied voltage. This optic signal is transmitted to the PIN detector and converted to an electric signal which is processed by the electronic circuit and 8098 single chip microcomputer the output voltage signal obtained is directly proportional to the applied voltage. This paper describes the principle the configuration and the performance parameters of the system. Test results are evaluated and discussed.

  9. The free energy barrier for arginine gating charge translation is altered by mutations in the voltage sensor domain.

    Directory of Open Access Journals (Sweden)

    Christine S Schwaiger

    Full Text Available The gating of voltage-gated ion channels is controlled by the arginine-rich S4 helix of the voltage-sensor domain moving in response to an external potential. Recent studies have suggested that S4 moves in three to four steps to open the conducting pore, thus visiting several intermediate conformations during gating. However, the exact conformational changes are not known in detail. For instance, it has been suggested that there is a local rotation in the helix corresponding to short segments of a 3(10-helix moving along S4 during opening and closing. Here, we have explored the energetics of the transition between the fully open state (based on the X-ray structure and the first intermediate state towards channel closing (C1, modeled from experimental constraints. We show that conformations within 3 Å of the X-ray structure are obtained in simulations starting from the C1 model, and directly observe the previously suggested sliding 3(10-helix region in S4. Through systematic free energy calculations, we show that the C1 state is a stable intermediate conformation and determine free energy profiles for moving between the states without constraints. Mutations indicate several residues in a narrow hydrophobic band in the voltage sensor contribute to the barrier between the open and C1 states, with F233 in the S2 helix having the largest influence. Substitution for smaller amino acids reduces the transition cost, while introduction of a larger ring increases it, largely confirming experimental activation shift results. There is a systematic correlation between the local aromatic ring rotation, the arginine barrier crossing, and the corresponding relative free energy. In particular, it appears to be more advantageous for the F233 side chain to rotate towards the extracellular side when arginines cross the hydrophobic region.

  10. Controlled formation of metallic nanowires via Au nanoparticle ac trapping

    International Nuclear Information System (INIS)

    Bernard, L; Calame, M; Molen, S J van der; Liao, J; Schoenenberger, C

    2007-01-01

    Applying ac voltages, we trapped gold nanoparticles between micro-fabricated electrodes under well-defined conditions. We demonstrate that the nanoparticles can be controllably fused together to form homogeneous gold nanowires with pre-defined diameters and conductance values. Whereas electromigration is known to form a gap when a dc voltage is applied, this ac technique achieves the opposite, thereby completing the toolkit for the fabrication of nanoscale junctions

  11. Controlled formation of metallic nanowires via Au nanoparticle ac trapping

    Energy Technology Data Exchange (ETDEWEB)

    Bernard, L; Calame, M; Molen, S J van der; Liao, J; Schoenenberger, C [Institute of Physics, University of Basel, CH-4056 Basel (Switzerland)

    2007-06-13

    Applying ac voltages, we trapped gold nanoparticles between micro-fabricated electrodes under well-defined conditions. We demonstrate that the nanoparticles can be controllably fused together to form homogeneous gold nanowires with pre-defined diameters and conductance values. Whereas electromigration is known to form a gap when a dc voltage is applied, this ac technique achieves the opposite, thereby completing the toolkit for the fabrication of nanoscale junctions.

  12. Three phase voltage measurements with simple open air sensors

    NARCIS (Netherlands)

    Heesch, van E.J.M.; Caspers, R.; Gulickx, P.F.M.; Jacobs, G.A.P.; Kersten, W.F.J.; Laan, van der P.C.T.

    1991-01-01

    A low cost, easy to install high-voltage measuring system is described for open air substations and overhead lines. Based on the Differentiating/Integrating (D/I) principle, three free-standing capacitive pickup electrodes are used to sense the three phase to ground voltages. Apart from the

  13. Observations of sensor bias dependent cluster centroid shifts in a prototype sensor for the LHCb Vertex Locator detector

    CERN Document Server

    Papadelis, Aras

    2006-01-01

    We present results from a recent beam test of a prototype sensor for the LHCb Vertex Locator detector, read out with the Beetle 1.3 front-end chip. We have studied the effect of the sensor bias voltage on the reconstructed cluster positions in a sensor placed in a 120GeV pion beam at a 10° incidence angle. We find an unexplained sysematic shift in the reconstructed cluster centroid when increasing the bias voltage on an already overdepleted sensor. The shift is independent of strip pitch and sensor thickness.

  14. Electro-chemical sensors, sensor arrays and circuits

    Science.gov (United States)

    Katz, Howard E.; Kong, Hoyoul

    2014-07-08

    An electro-chemical sensor includes a first electrode, a second electrode spaced apart from the first electrode, and a semiconductor channel in electrical contact with the first and second electrodes. The semiconductor channel includes a trapping material. The trapping material reduces an ability of the semiconductor channel to conduct a current of charge carriers by trapping at least some of the charge carriers to localized regions within the semiconductor channel. The semiconductor channel includes at least a portion configured to be exposed to an analyte to be detected, and the trapping material, when exposed to the analyte, interacts with the analyte so as to at least partially restore the ability of the semiconductor channel to conduct the current of charge carriers.

  15. Voltage-dependent gating of KCNH potassium channels lacking a covalent link between voltage-sensing and pore domains

    Science.gov (United States)

    Lörinczi, Éva; Gómez-Posada, Juan Camilo; de La Peña, Pilar; Tomczak, Adam P.; Fernández-Trillo, Jorge; Leipscher, Ulrike; Stühmer, Walter; Barros, Francisco; Pardo, Luis A.

    2015-03-01

    Voltage-gated channels open paths for ion permeation upon changes in membrane potential, but how voltage changes are coupled to gating is not entirely understood. Two modules can be recognized in voltage-gated potassium channels, one responsible for voltage sensing (transmembrane segments S1 to S4), the other for permeation (S5 and S6). It is generally assumed that the conversion of a conformational change in the voltage sensor into channel gating occurs through the intracellular S4-S5 linker that provides physical continuity between the two regions. Using the pathophysiologically relevant KCNH family, we show that truncated proteins interrupted at, or lacking the S4-S5 linker produce voltage-gated channels in a heterologous model that recapitulate both the voltage-sensing and permeation properties of the complete protein. These observations indicate that voltage sensing by the S4 segment is transduced to the channel gate in the absence of physical continuity between the modules.

  16. Reducing burn-in voltage loss in polymer solar cells by increasing the polymer crystallinity

    KAUST Repository

    Heumueller, Thomas

    2014-08-01

    In order to commercialize polymer solar cells, the fast initial performance losses present in many high efficiency materials will have to be managed. This burn-in degradation is caused by light-induced traps and its characteristics depend on which polymer is used. We show that the light-induced traps are in the bulk of the active layer and we find a direct correlation between their presence and the open-circuit voltage loss in devices made with amorphous polymers. Solar cells made with crystalline polymers do not show characteristic open circuit voltage losses, even though light-induced traps are also present in these devices. This indicates that crystalline materials are more resistant against the influence of traps on device performance. Recent work on crystalline materials has shown there is an energetic driving force for charge carriers to leave amorphous, mixed regions of bulk heterojunctions, and charges are dominantly transported in pure, ordered phases. This energetic landscape allows efficient charge generation as well as extraction and also may benefit the stability against light-induced traps. This journal is © the Partner Organisations 2014.

  17. Collected charge and Lorentz angle measurement on non-irradiated ATLAS silicon micro-strip sensors for the HL-LHC

    Energy Technology Data Exchange (ETDEWEB)

    Yildirim, Eda

    2017-02-15

    is small due to increasing trapping, the visible effect of the Lorentz force in the detector decreases, therefore the measured Lorentz angle decreases. Short-term annealing increases the Lorentz angle, due to the decrease in full depletion voltage. However, on the highly irradiated samples the annealing further decreases the Lorentz angle. The analysis is also re-performed using the signal threshold that will be used in the digital readout of strip sensors at the future ATLAS inner tracker. It is seen that the visible effect of the Lorentz force decreases at lower fluences due to the higher threshold.

  18. Trap assisted space charge conduction in p-NiO/n-ZnO heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Tyagi, Manisha [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India); Tomar, Monika [Physics department, Miranda House, University of Delhi, Delhi-110007 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

    2015-06-15

    Highlights: • p-NiO/n-ZnO heterojunction diode with enhanced junction parameters has been prepared. • Temperature dependent I–V throw insight into the involved conduction mechanism. • SCLC with exponential trap distribution was found to be the dominant mechanism. • C–V measurement at different frequencies support the presence of traps. - Abstract: The development of short-wavelength p–n junction is essentially important for the realization of transparent electronics for next-generation optoelectronic devices. In the present work, a p–n heterojunction diode based on p-NiO/n-ZnO has been prepared under the optimised growth conditions exhibiting improved electrical and junction parameters. The fabricated heterojunction gives typical current–voltage (I–V) characteristics with good rectifying behaviour (rectification ratio ≈ 10{sup 4} at 2 V). The temperature dependent current–voltage characteristics of heterojunction diode have been studied and origin of conduction mechanism is identified. The space-charge limited conduction with exponential trap distribution having deep level trap is found to be the dominant conduction mechanism in the fabricated p–n heterojunction diode. The conduction and valence band discontinuities for NiO/ZnO heterostructure have been determined from the capacitance–voltage (C–V) measurements.

  19. Mini ion trap mass spectrometer

    Science.gov (United States)

    Dietrich, D.D.; Keville, R.F.

    1995-09-19

    An ion trap is described which operates in the regime between research ion traps which can detect ions with a mass resolution of better than 1:10{sup 9} and commercial mass spectrometers requiring 10{sup 4} ions with resolutions of a few hundred. The power consumption is kept to a minimum by the use of permanent magnets and a novel electron gun design. By Fourier analyzing the ion cyclotron resonance signals induced in the trap electrodes, a complete mass spectra in a single combined structure can be detected. An attribute of the ion trap mass spectrometer is that overall system size is drastically reduced due to combining a unique electron source and mass analyzer/detector in a single device. This enables portable low power mass spectrometers for the detection of environmental pollutants or illicit substances, as well as sensors for on board diagnostics to monitor engine performance or for active feedback in any process involving exhausting waste products. 10 figs.

  20. Optimising camera traps for monitoring small mammals.

    Directory of Open Access Journals (Sweden)

    Alistair S Glen

    Full Text Available Practical techniques are required to monitor invasive animals, which are often cryptic and occur at low density. Camera traps have potential for this purpose, but may have problems detecting and identifying small species. A further challenge is how to standardise the size of each camera's field of view so capture rates are comparable between different places and times. We investigated the optimal specifications for a low-cost camera trap for small mammals. The factors tested were 1 trigger speed, 2 passive infrared vs. microwave sensor, 3 white vs. infrared flash, and 4 still photographs vs. video. We also tested a new approach to standardise each camera's field of view. We compared the success rates of four camera trap designs in detecting and taking recognisable photographs of captive stoats (Mustelaerminea, feral cats (Felis catus and hedgehogs (Erinaceuseuropaeus. Trigger speeds of 0.2-2.1 s captured photographs of all three target species unless the animal was running at high speed. The camera with a microwave sensor was prone to false triggers, and often failed to trigger when an animal moved in front of it. A white flash produced photographs that were more readily identified to species than those obtained under infrared light. However, a white flash may be more likely to frighten target animals, potentially affecting detection probabilities. Video footage achieved similar success rates to still cameras but required more processing time and computer memory. Placing two camera traps side by side achieved a higher success rate than using a single camera. Camera traps show considerable promise for monitoring invasive mammal control operations. Further research should address how best to standardise the size of each camera's field of view, maximise the probability that an animal encountering a camera trap will be detected, and eliminate visible or audible cues emitted by camera traps.

  1. Non-contact current and voltage sensing method using a clamshell housing and a ferrite cylinder

    Science.gov (United States)

    Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C.; Schappert, Michael

    2016-04-26

    A method of measurement using a detachable current and voltage sensor provides an isolated and convenient technique for to measuring current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  2. A wireless acoustic emission sensor remotely powered by light

    International Nuclear Information System (INIS)

    Zahedi, F; Huang, H

    2014-01-01

    In this paper, wireless sensing of acoustic emission (AE) signals using a battery-free sensor node remotely powered by light is presented. The wireless sensor consists of a piezoelectric wafer active sensor (PWAS) for AE signal acquisition and a wireless transponder that performs signal conditioning, frequency conversion, and wireless transmission. For signal conditioning, a voltage follower that consumes less than 2 mW was introduced to buffer the high impedance of the PWAS from the low impedance of the wireless transponder. A photocell-based energy harvester with a stable voltage output was developed to power the voltage follower so that the wireless AE sensor can operate without an external power source. The principle of operation of the battery-free wireless AE sensor node and the sensor interrogation system is described, followed by a detailed description of the hardware implementation. The voltage follower and the wireless channel were characterized by ultrasound pitch–catch and pencil lead break experiments. (paper)

  3. Triboelectric Hydrogen Gas Sensor with Pd Functionalized Surface

    Directory of Open Access Journals (Sweden)

    Sung-Ho Shin

    2016-10-01

    Full Text Available Palladium (Pd-based hydrogen (H2 gas sensors have been widely investigated thanks to its fast reaction and high sensitivity to hydrogen. Various sensing mechanisms have been adopted for H2 gas sensors; however, all the sensors must be powered through an external battery. We report here an H2 gas sensor that can detect H2 by measuring the output voltages generated during contact electrification between two friction surfaces. When the H2 sensor, composed of Pd-coated ITO (indium tin oxide and PET (polyethylene Terephthalate film, is exposed to H2, its output voltage is varied in proportion to H2 concentration because the work function (WF of Pd-coated surface changes, altering triboelectric charging behavior. Specifically, the output voltage of the sensor is gradually increased as exposing H2 concentration increases. Reproducible and sensitive sensor response was observed up 1% H2 exposure. The approach introduced here can easily be adopted to development of triboelectric gas sensors detecting other gas species.

  4. Modeling of radiation-induced charge trapping in MOS devices under ionizing irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Petukhov, M. A., E-mail: m.a.petukhov@gmail.com; Ryazanov, A. I. [National Research Center Kurchatov Institute (Russian Federation)

    2016-12-15

    The numerical model of the radiation-induced charge trapping process in the oxide layer of a MOS device under ionizing irradiation is developed; the model includes carrier transport, hole capture by traps in different states, recombination of free electrons and trapped holes, kinetics of hydrogen ions which can be accumulated in the material during transistor manufacture, and accumulation and charging of interface states. Modeling of n-channel MOSFET behavior under 1 MeV photon irradiation is performed. The obtained dose dependences of the threshold voltage shift and its contributions from trapped holes and interface states are in good agreement with experimental data.

  5. Functional diversity of voltage-sensing phosphatases in two urodele amphibians.

    Science.gov (United States)

    Mutua, Joshua; Jinno, Yuka; Sakata, Souhei; Okochi, Yoshifumi; Ueno, Shuichi; Tsutsui, Hidekazu; Kawai, Takafumi; Iwao, Yasuhiro; Okamura, Yasushi

    2014-07-16

    Voltage-sensing phosphatases (VSPs) share the molecular architecture of the voltage sensor domain (VSD) with voltage-gated ion channels and the phosphoinositide phosphatase region with the phosphatase and tensin homolog (PTEN), respectively. VSPs enzymatic activities are regulated by the motions of VSD upon depolarization. The physiological role of these proteins has remained elusive, and insights may be gained by investigating biological variations in different animal species. Urodele amphibians are vertebrates with potent activities of regeneration and also show diverse mechanisms of polyspermy prevention. We cloned cDNAs of VSPs from the testes of two urodeles; Hynobius nebulosus and Cynops pyrrhogaster, and compared their expression and voltage-dependent activation. Their molecular architecture is highly conserved in both Hynobius VSP (Hn-VSP) and Cynops VSP (Cp-VSP), including the positively-charged arginine residues in the S4 segment of the VSD and the enzymatic active site for substrate binding, yet the C-terminal C2 domain of Hn-VSP is significantly shorter than that of Cp-VSP and other VSP orthologs. RT-PCR analysis showed that gene expression pattern was distinct between two VSPs. The voltage sensor motions and voltage-dependent phosphatase activities were investigated electrophysiologically by expression in Xenopus oocytes. Both VSPs showed "sensing" currents, indicating that their voltage sensor domains are functional. The phosphatase activity of Cp-VSP was found to be voltage dependent, as shown by its ability to regulate the conductance of coexpressed GIRK2 channels, but Hn-VSP lacked such phosphatase activity due to the truncation of its C2 domain. © 2014 The Authors. Physiological Reports published by Wiley Periodicals, Inc. on behalf of the American Physiological Society and The Physiological Society.

  6. Chemical sensors are hybrid-input memristors

    Science.gov (United States)

    Sysoev, V. I.; Arkhipov, V. E.; Okotrub, A. V.; Pershin, Y. V.

    2018-04-01

    Memristors are two-terminal electronic devices whose resistance depends on the history of input signal (voltage or current). Here we demonstrate that the chemical gas sensors can be considered as memristors with a generalized (hybrid) input, namely, with the input consisting of the voltage, analyte concentrations and applied temperature. The concept of hybrid-input memristors is demonstrated experimentally using a single-walled carbon nanotubes chemical sensor. It is shown that with respect to the hybrid input, the sensor exhibits some features common with memristors such as the hysteretic input-output characteristics. This different perspective on chemical gas sensors may open new possibilities for smart sensor applications.

  7. Structure and hydration of membranes embedded with voltage-sensing domains.

    Science.gov (United States)

    Krepkiy, Dmitriy; Mihailescu, Mihaela; Freites, J Alfredo; Schow, Eric V; Worcester, David L; Gawrisch, Klaus; Tobias, Douglas J; White, Stephen H; Swartz, Kenton J

    2009-11-26

    Despite the growing number of atomic-resolution membrane protein structures, direct structural information about proteins in their native membrane environment is scarce. This problem is particularly relevant in the case of the highly charged S1-S4 voltage-sensing domains responsible for nerve impulses, where interactions with the lipid bilayer are critical for the function of voltage-activated ion channels. Here we use neutron diffraction, solid-state nuclear magnetic resonance (NMR) spectroscopy and molecular dynamics simulations to investigate the structure and hydration of bilayer membranes containing S1-S4 voltage-sensing domains. Our results show that voltage sensors adopt transmembrane orientations and cause a modest reshaping of the surrounding lipid bilayer, and that water molecules intimately interact with the protein within the membrane. These structural findings indicate that voltage sensors have evolved to interact with the lipid membrane while keeping energetic and structural perturbations to a minimum, and that water penetrates the membrane, to hydrate charged residues and shape the transmembrane electric field.

  8. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

    Science.gov (United States)

    Zhang, Z.; Cardwell, D.; Sasikumar, A.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Arehart, A. R.; Ringel, S. A.

    2016-04-01

    The impact of proton irradiation on the threshold voltage (VT) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of VT was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 1014 cm-2. Silvaco Atlas simulations of VT shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different VT dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed VT shifts. The proton irradiation induced VT shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

  9. Conduction mechanism of leakage current due to the traps in ZrO2 thin film

    International Nuclear Information System (INIS)

    Seo, Yohan; Lee, Sangyouk; An, Ilsin; Jeong, Heejun; Song, Chulgi

    2009-01-01

    In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO 2 ) gate dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage current characteristics under negative bias were studied. From the result of current–voltage curves there are two possible conduction mechanisms to explain the leakage current in the ZrO 2 thin film. The dominant mechanism is the space charge limited conduction in the high-electric field region (1.5–5.0 MV cm −1 ) while the trap-assisted tunneling due to the existence of traps is prevailed in the low-electric field region (0.8–1.5 MV cm −1 ). Conduction caused by the trap-assisted tunneling is found from the experimental results of a weak temperature dependence of current, and the trap barrier height is obtained. The space charge limited conduction is evidenced, for different temperatures, by Child's law dependence of current density versus voltage. Child's law dependence can be explained by considering a single discrete trapping level and we can obtain the activation energy of 0.22 eV

  10. Conduction mechanism of leakage current due to the traps in ZrO2 thin film

    Science.gov (United States)

    Seo, Yohan; Lee, Sangyouk; An, Ilsin; Song, Chulgi; Jeong, Heejun

    2009-11-01

    In this work, a metal-oxide-semiconductor capacitor with zirconium oxide (ZrO2) gate dielectric was fabricated by an atomic layer deposition (ALD) technique and the leakage current characteristics under negative bias were studied. From the result of current-voltage curves there are two possible conduction mechanisms to explain the leakage current in the ZrO2 thin film. The dominant mechanism is the space charge limited conduction in the high-electric field region (1.5-5.0 MV cm-1) while the trap-assisted tunneling due to the existence of traps is prevailed in the low-electric field region (0.8-1.5 MV cm-1). Conduction caused by the trap-assisted tunneling is found from the experimental results of a weak temperature dependence of current, and the trap barrier height is obtained. The space charge limited conduction is evidenced, for different temperatures, by Child's law dependence of current density versus voltage. Child's law dependence can be explained by considering a single discrete trapping level and we can obtain the activation energy of 0.22 eV.

  11. In-situ monitoring of internal local temperature and voltage of proton exchange membrane fuel cells.

    Science.gov (United States)

    Lee, Chi-Yuan; Fan, Wei-Yuan; Hsieh, Wei-Jung

    2010-01-01

    The distribution of temperature and voltage of a fuel cell are key factors that influence performance. Conventional sensors are normally large, and are also useful only for making external measurements of fuel cells. Centimeter-scale sensors for making invasive measurements are frequently unable to accurately measure the interior changes of a fuel cell. This work focuses mainly on fabricating flexible multi-functional microsensors (for temperature and voltage) to measure variations in the local temperature and voltage of proton exchange membrane fuel cells (PEMFC) that are based on micro-electro-mechanical systems (MEMS). The power density at 0.5 V without a sensor is 450 mW/cm(2), and that with a sensor is 426 mW/cm(2). Since the reaction area of a fuel cell with a sensor is approximately 12% smaller than that without a sensor, but the performance of the former is only 5% worse.

  12. Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

    Science.gov (United States)

    Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

    2017-10-01

    A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

  13. Manipulating Neutral Atoms in Chip-Based Magnetic Traps

    Science.gov (United States)

    Aveline, David; Thompson, Robert; Lundblad, Nathan; Maleki, Lute; Yu, Nan; Kohel, James

    2009-01-01

    Several techniques for manipulating neutral atoms (more precisely, ultracold clouds of neutral atoms) in chip-based magnetic traps and atomic waveguides have been demonstrated. Such traps and waveguides are promising components of future quantum sensors that would offer sensitivities much greater than those of conventional sensors. Potential applications include gyroscopy and basic research in physical phenomena that involve gravitational and/or electromagnetic fields. The developed techniques make it possible to control atoms with greater versatility and dexterity than were previously possible and, hence, can be expected to contribute to the value of chip-based magnetic traps and atomic waveguides. The basic principle of these techniques is to control gradient magnetic fields with suitable timing so as to alter a trap to exert position-, velocity-, and/or time-dependent forces on atoms in the trap to obtain desired effects. The trap magnetic fields are generated by controlled electric currents flowing in both macroscopic off-chip electromagnet coils and microscopic wires on the surface of the chip. The methods are best explained in terms of examples. Rather than simply allowing atoms to expand freely into an atomic waveguide, one can give them a controllable push by switching on an externally generated or a chip-based gradient magnetic field. This push can increase the speed of the atoms, typically from about 5 to about 20 cm/s. Applying a non-linear magnetic-field gradient exerts different forces on atoms in different positions a phenomenon that one can exploit by introducing a delay between releasing atoms into the waveguide and turning on the magnetic field.

  14. Energy harvesting in high voltage measuring techniques

    International Nuclear Information System (INIS)

    Żyłka, Pawel; Doliński, Marcin

    2016-01-01

    The paper discusses selected problems related to application of energy harvesting (that is, generating electricity from surplus energy present in the environment) to supply autonomous ultra-low-power measurement systems applicable in high voltage engineering. As a practical example of such implementation a laboratory model of a remote temperature sensor is presented, which is self-powered by heat generated in a current-carrying busbar in HV- switchgear. Presented system exploits a thermoelectric harvester based on a passively cooled Peltier module supplying micro-power low-voltage dc-dc converter driving energy-efficient temperature sensor, microcontroller and a fibre-optic transmitter. Performance of the model in laboratory simulated conditions are presented and discussed. (paper)

  15. Pharmacology of the Nav1.1 domain IV voltage sensor reveals coupling between inactivation gating processes.

    Science.gov (United States)

    Osteen, Jeremiah D; Sampson, Kevin; Iyer, Vivek; Julius, David; Bosmans, Frank

    2017-06-27

    The Na v 1.1 voltage-gated sodium channel is a critical contributor to excitability in the brain, where pathological loss of function leads to such disorders as epilepsy, Alzheimer's disease, and autism. This voltage-gated sodium (Na v ) channel subtype also plays an important role in mechanical pain signaling by primary afferent somatosensory neurons. Therefore, pharmacologic modulation of Na v 1.1 represents a potential strategy for treating excitability disorders of the brain and periphery. Inactivation is a complex aspect of Na v channel gating and consists of fast and slow components, each of which may involve a contribution from one or more voltage-sensing domains. Here, we exploit the Hm1a spider toxin, a Na v 1.1-selective modulator, to better understand the relationship between these temporally distinct modes of inactivation and ask whether they can be distinguished pharmacologically. We show that Hm1a inhibits the gating movement of the domain IV voltage sensor (VSDIV), hindering both fast and slow inactivation and leading to an increase in Na v 1.1 availability during high-frequency stimulation. In contrast, ICA-121431, a small-molecule Na v 1.1 inhibitor, accelerates a subsequent VSDIV gating transition to accelerate entry into the slow inactivated state, resulting in use-dependent block. Further evidence for functional coupling between fast and slow inactivation is provided by a Na v 1.1 mutant in which fast inactivation removal has complex effects on slow inactivation. Taken together, our data substantiate the key role of VSDIV in Na v channel fast and slow inactivation and demonstrate that these gating processes are sequential and coupled through VSDIV. These findings provide insight into a pharmacophore on VSDIV through which modulation of inactivation gating can inhibit or facilitate Na v 1.1 function.

  16. Temperature and Voltage Coupling to Channel Opening in Transient Receptor Potential Melastatin 8 (TRPM8)*♦

    Science.gov (United States)

    Raddatz, Natalia; Castillo, Juan P.; Gonzalez, Carlos; Alvarez, Osvaldo; Latorre, Ramon

    2014-01-01

    Expressed in somatosensory neurons of the dorsal root and trigeminal ganglion, the transient receptor potential melastatin 8 (TRPM8) channel is a Ca2+-permeable cation channel activated by cold, voltage, phosphatidylinositol 4,5-bisphosphate, and menthol. Although TRPM8 channel gating has been characterized at the single channel and macroscopic current levels, there is currently no consensus regarding the extent to which temperature and voltage sensors couple to the conduction gate. In this study, we extended the range of voltages where TRPM8-induced ionic currents were measured and made careful measurements of the maximum open probability the channel can attain at different temperatures by means of fluctuation analysis. The first direct measurements of TRPM8 channel temperature-driven conformational rearrangements provided here suggest that temperature alone is able to open the channel and that the opening reaction is voltage-independent. Voltage is a partial activator of TRPM8 channels, because absolute open probability values measured with fully activated voltage sensors are less than 1, and they decrease as temperature rises. By unveiling the fast temperature-dependent deactivation process, we show that TRPM8 channel deactivation is well described by a double exponential time course. The fast and slow deactivation processes are temperature-dependent with enthalpy changes of 27.2 and 30.8 kcal mol−1. The overall Q10 for the closing reaction is about 33. A three-tiered allosteric model containing four voltage sensors and four temperature sensors can account for the complex deactivation kinetics and coupling between voltage and temperature sensor activation and channel opening. PMID:25352597

  17. Improved detection of electrical activity with a voltage probe based on a voltage-sensing phosphatase.

    Science.gov (United States)

    Tsutsui, Hidekazu; Jinno, Yuka; Tomita, Akiko; Niino, Yusuke; Yamada, Yoshiyuki; Mikoshiba, Katsuhiko; Miyawaki, Atsushi; Okamura, Yasushi

    2013-09-15

      One of the most awaited techniques in modern physiology is the sensitive detection of spatiotemporal electrical activity in a complex network of excitable cells. The use of genetically encoded voltage probes has been expected to enable such analysis. However, in spite of recent progress, existing probes still suffer from low signal amplitude and/or kinetics too slow to detect fast electrical activity. Here, we have developed an improved voltage probe named Mermaid2, which is based on the voltage-sensor domain of the voltage-sensing phosphatase from Ciona intestinalis and Förster energy transfer between a pair of fluorescent proteins. In mammalian cells, Mermaid2 permits ratiometric readouts of fractional changes of more than 50% over a physiologically relevant voltage range with fast kinetics, and it was used to follow a train of action potentials at frequencies of up to 150 Hz. Mermaid2 was also able to detect single action potentials and subthreshold voltage responses in hippocampal neurons in vitro, in addition to cortical electrical activity evoked by sound stimuli in single trials in living mice.

  18. Tingkat Intensitas Cahaya Di Dalam Ruangan Dengan Menggunakan Sensor Ldr Berbasis Arduino Uno R-3

    OpenAIRE

    Siahaan, Haslena A.

    2017-01-01

    Has designed a measure of light intensity levels using LDR sensor. The working principle of a series of light sensors on sebenarya very simple. Voltage division between VR1 and LDR is at the core of the light above the sensor circuit. The increase in the voltage at VR1 will reduce the voltage falls on LDR, vice versa rise in LDR voltage will reduce the voltage drop on the VR1. Voltage division in accordance with the formula that applies a voltage divider in a series circuit, the voltage suppl...

  19. Fluorescence profiles and cooling dynamics of laser-cooled Mg+ ions in a linear rf ion trap

    International Nuclear Information System (INIS)

    Zhao Xianzhen; Ryjkov, Vladimir L.; Schuessler, Hans A.

    2006-01-01

    Fluorescence line profiles and their implications on the cooling dynamics of the Mg + ions stored in a linear rf trap are studied. The line profile is dictated by the temperature of the ion cloud at different laser detunings. The upper bound of the lowest temperature was estimated for different values of the rf trapping potential amplitude and the buffer gas pressure. A general trend of this ultimate temperature to increase with the rf trapping voltage and buffer gas pressure is expected, with an abrupt change at some critical value corresponding to the transition to and from a strongly correlated liquid or crystal state. While on the one hand this expectation was confirmed when the buffer gas pressure was varied; on the other hand the influence of the amplitude of the trapping voltage on the ultimate temperature shows an interesting new feature of first dipping down before the sharp increase occurs

  20. Voltage-gated calcium flux mediates Escherichia coli mechanosensation.

    Science.gov (United States)

    Bruni, Giancarlo N; Weekley, R Andrew; Dodd, Benjamin J T; Kralj, Joel M

    2017-08-29

    Electrically excitable cells harness voltage-coupled calcium influx to transmit intracellular signals, typically studied in neurons and cardiomyocytes. Despite intense study in higher organisms, investigations of voltage and calcium signaling in bacteria have lagged due to their small size and a lack of sensitive tools. Only recently were bacteria shown to modulate their membrane potential on the timescale of seconds, and little is known about the downstream effects from this modulation. In this paper, we report on the effects of electrophysiology in individual bacteria. A genetically encoded calcium sensor expressed in Escherichia coli revealed calcium transients in single cells. A fusion sensor that simultaneously reports voltage and calcium indicated that calcium influx is induced by voltage depolarizations, similar to metazoan action potentials. Cytoplasmic calcium levels and transients increased upon mechanical stimulation with a hydrogel, and single cells altered protein concentrations dependent on the mechanical environment. Blocking voltage and calcium flux altered mechanically induced changes in protein concentration, while inducing calcium flux reproduced these changes. Thus, voltage and calcium relay a bacterial sense of touch and alter cellular lifestyle. Although the calcium effectors remain unknown, these data open a host of new questions about E. coli , including the identity of the underlying molecular players, as well as other signals conveyed by voltage and calcium. These data also provide evidence that dynamic voltage and calcium exists as a signaling modality in the oldest domain of life, and therefore studying electrophysiology beyond canonical electrically excitable cells could yield exciting new findings.

  1. Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability

    International Nuclear Information System (INIS)

    Ji Xiao-Li; Liao Yi-Ming; Yan Feng; Shi Yi; Zhang Guan; Guo Qiang

    2011-01-01

    Negative bias temperature instability (NBTI) in ultrathin-plasma-nitrided-oxide (PNO) based p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) is investigated at temperatures ranging from 220K to 470K. It is found that the threshold voltage V T degradation below 290 K is dominated by the hole trapping process. Further studies unambiguously show that this process is unnecessarily related to nitrogen but the incorporation of nitrogen in the gate dielectric increases the probability of hole trapping in the NBTI process as it introduces extra trap states located in the upper half of the Si band gap. The possible hole trapping mechanism in NBTI stressed PNO pMOSFETs is suggested by taking account of oxygen and nitrogen related trap centers. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. System for improving measurement accuracy of transducer by measuring transducer temperature and resistance change using thermoelectric voltages

    Science.gov (United States)

    Anderson, Karl F. (Inventor); Parker, Allen R., Jr. (Inventor)

    1993-01-01

    A constant current loop measuring system measures a property including the temperature of a sensor responsive to an external condition being measured. The measuring system includes thermocouple conductors connected to the sensor, sensing first and second induced voltages responsive to the external condition. In addition, the measuring system includes a current generator and reverser generating a constant current, and supplying the constant current to the thermocouple conductors in forward and reverse directions generating first and second measured voltages, and a determining unit receiving the first and second measured voltages from the current generator and reverser, and determining the temperature of the sensor responsive to the first and second measured voltages.

  3. In-situ Monitoring of Internal Local Temperature and Voltage of Proton Exchange Membrane Fuel Cells

    Directory of Open Access Journals (Sweden)

    Chi-Yuan Lee

    2010-06-01

    Full Text Available The distribution of temperature and voltage of a fuel cell are key factors that influence performance. Conventional sensors are normally large, and are also useful only for making external measurements of fuel cells. Centimeter-scale sensors for making invasive measurements are frequently unable to accurately measure the interior changes of a fuel cell. This work focuses mainly on fabricating flexible multi-functional microsensors (for temperature and voltage to measure variations in the local temperature and voltage of proton exchange membrane fuel cells (PEMFC that are based on micro-electro-mechanical systems (MEMS. The power density at 0.5 V without a sensor is 450 mW/cm2, and that with a sensor is 426 mW/cm2. Since the reaction area of a fuel cell with a sensor is approximately 12% smaller than that without a sensor, but the performance of the former is only 5% worse.

  4. Nanographene charge trapping memory with a large memory window

    International Nuclear Information System (INIS)

    Meng, Jianling; Yang, Rong; Zhao, Jing; He, Congli; Wang, Guole; Shi, Dongxia; Zhang, Guangyu

    2015-01-01

    Nanographene is a promising alternative to metal nanoparticles or semiconductor nanocrystals for charge trapping memory. In general, a high density of nanographene is required in order to achieve high charge trapping capacity. Here, we demonstrate a strategy of fabrication for a high density of nanographene for charge trapping memory with a large memory window. The fabrication includes two steps: (1) direct growth of continuous nanographene film; and (2) isolation of the as-grown film into high-density nanographene by plasma etching. Compared with directly grown isolated nanographene islands, abundant defects and edges are formed in nanographene under argon or oxygen plasma etching, i.e. more isolated nanographene islands are obtained, which provides more charge trapping sites. As-fabricated nanographene charge trapping memory shows outstanding memory properties with a memory window as wide as ∼9 V at a relative low sweep voltage of ±8 V, program/erase speed of ∼1 ms and robust endurance of >1000 cycles. The high-density nanographene charge trapping memory provides an outstanding alternative for downscaling technology beyond the current flash memory. (paper)

  5. Modeling space-charge-limited currents in organic semiconductors: Extracting trap density and mobility

    KAUST Repository

    Dacuña, Javier

    2011-11-28

    We have developed and have applied a mobility edge model that takes drift and diffusion currents to characterize the space-charge-limited current in organic semiconductors into account. The numerical solution of the drift-diffusion equation allows the utilization of asymmetric contacts to describe the built-in potential within the device. The model has been applied to extract information of the distribution of traps from experimental current-voltage measurements of a rubrene single crystal from Krellner showing excellent agreement across several orders of magnitude in the current. Although the two contacts are made of the same metal, an energy offset of 580 meV between them, ascribed to differences in the deposition techniques (lamination vs evaporation) was essential to correctly interpret the shape of the current-voltage characteristics at low voltage. A band mobility of 0.13cm 2V-1s-1 for holes is estimated, which is consistent with transport along the long axis of the orthorhombic unit cell. The total density of traps deeper than 0.1 eV was 2.2×1016cm -3. The sensitivity analysis and error estimation in the obtained parameters show that it is not possible to accurately resolve the shape of the trap distribution for energies deeper than 0.3 eV or shallower than 0.1 eV above the valence-band edge. The total number of traps deeper than 0.3 eV, however, can be estimated. Contact asymmetry and the diffusion component of the current play an important role in the description of the device at low bias and are required to obtain reliable information about the distribution of deep traps. © 2011 American Physical Society.

  6. Nano devices and sensors

    CERN Document Server

    Liaw, Shien-Kuei; Chung, Yung-Hui

    2016-01-01

    This volume on semiconductor devices focuses on such topics as nano-imprinting, lithography, nanowire charge-trapping, thermo-stability in nanowires, nano-electrodes, and voltage and materials used for fabricating and improving electrical characteristics of nano-materials.

  7. Selective microwave sensors exploiting the interaction of analytes with trap states in TiO2 nanotube arrays

    Science.gov (United States)

    Zarifi, M. H.; Farsinezhad, S.; Abdolrazzaghi, M.; Daneshmand, M.; Shankar, K.

    2016-03-01

    Sensing of molecular analytes by probing the effects of their interaction with microwaves is emerging as a cheap, compact, label-free and highly sensitive detection and quantification technique. Microstrip ring-type resonators are particularly favored for this purpose due to their planar sensing geometry, electromagnetic field enhancements in the coupling gap and compatibility with established printed circuit board manufacturing. However, the lack of selectivity in what is essentially a permittivity-sensing method is an impediment to wider adoption and implementation of this sensing platform. By placing a polycrystalline anatase-phase TiO2 nanotube membrane in the coupling gap of a microwave resonator, we engineer selectivity for the detection and differentiation of methanol, ethanol and 2-propanol. The scavenging of reactive trapped holes by aliphatic alcohols adsorbed on TiO2 is responsible for the alcohol-specific detection while the different short chain alcohols are distinguished on the basis of differences in their microwave response. Electrodeless microwave sensors which allow spectral and time-dependent monitoring of the resonance frequency and quality factor provide a wealth of information in comparison with electrode-based resistive sensors for the detection of volatile organic compounds. A high dynamic range (400 ppm-10 000 ppm) is demonstrated for methanol detection.Sensing of molecular analytes by probing the effects of their interaction with microwaves is emerging as a cheap, compact, label-free and highly sensitive detection and quantification technique. Microstrip ring-type resonators are particularly favored for this purpose due to their planar sensing geometry, electromagnetic field enhancements in the coupling gap and compatibility with established printed circuit board manufacturing. However, the lack of selectivity in what is essentially a permittivity-sensing method is an impediment to wider adoption and implementation of this sensing platform

  8. Trapping effects and acoustoelectric current saturation in ZnO single crystals

    DEFF Research Database (Denmark)

    Mosekilde, Erik

    1970-01-01

    Measurements of current-voltage characteristics for ZnO single crystals at temperatures between 77 and 640 °K are reported. Because of the buildup of an intense acoustic flux, a strong current saturation sets in when the trap-controlled electron drift velocity is equal to the velocity of sound....... The temperature dependence of the saturated current is discussed in terms of a trapping model which includes nonlinear trapping effects. Our results indicate the presence of a shallow-donor level with an ionization energy of 50 meV and a deep-donor level approximately 230 meV below the conduction-band edge...

  9. Analysis of time-dependent effects when operating nested-well plasma traps for achieving antihydrogen recombination

    International Nuclear Information System (INIS)

    Chang Yongbin; Dolliver, D. D.; Ordonez, C. A.

    1999-01-01

    In the work reported, time-dependent effects are considered which affect the prospect of getting two oppositely signed plasmas to overlap the same region while trapped within a solenoidal magnetic field. Parameters that are relevant to future experimental attempts at producing cold antihydrogen atoms using nested-well plasma traps are considered. It is found that the timescale over which an overlap remains, without changing the electrode voltages, can be much larger than the timescale over which the overlap plasma recombines. Hence, it does not appear necessary to use time-dependent electrode voltages to maintain the overlap while antihydrogen atoms are being produced

  10. Deep electron traps in HfO_2-based metal-oxide-semiconductor capacitors

    International Nuclear Information System (INIS)

    Salomone, L. Sambuco; Lipovetzky, J.; Carbonetto, S.H.; García Inza, M.A.; Redin, E.G.; Campabadal, F.

    2016-01-01

    Hafnium oxide (HfO_2) is currently considered to be a good candidate to take part as a component in charge-trapping nonvolatile memories. In this work, the electric field and time dependences of the electron trapping/detrapping processes are studied through a constant capacitance voltage transient technique on metal-oxide-semiconductor capacitors with atomic layer deposited HfO_2 as insulating layer. A tunneling-based model is proposed to reproduce the experimental results, obtaining fair agreement between experiments and simulations. From the fitting procedure, a band of defects is identified, located in the first 1.7 nm from the Si/HfO_2 interface at an energy level E_t = 1.59 eV below the HfO_2 conduction band edge with density N_t = 1.36 × 10"1"9 cm"−"3. A simplified analytical version of the model is proposed in order to ease the fitting procedure for the low applied voltage case considered in this work. - Highlights: • We characterized deep electron trapping/detrapping in HfO_2 structures. • We modeled the experimental results through a tunneling-based model. • We obtained an electron trap energy level of 1.59 eV below conduction band edge. • We obtained a spatial trap distribution extending 1.7 nm within the insulator. • A simplified tunneling front model is able to reproduce the experimental results.

  11. Estimation of the spatial distribution of traps using space-charge-limited current measurements in an organic single crystal

    KAUST Repository

    Dacuñ a, Javier; Xie, Wei; Salleo, Alberto

    2012-01-01

    bias), which does not exhibit injection-limited current in the measured voltage range. This behavior is attributed to an asymmetric distribution of trap states in the semiconductor, specifically, a distribution of traps located near the top contact

  12. 0.5 V and 0.43 pJ/bit Capacitive Sensor Interface for Passive Wireless Sensor Systems.

    Science.gov (United States)

    Beriain, Andoni; Gutierrez, Iñigo; Solar, Hector; Berenguer, Roc

    2015-08-28

    This paper presents an ultra low-power and low-voltage pulse-width modulation based ratiometric capacitive sensor interface. The interface was designed and fabricated in a standard 90 nm CMOS 1P9M technology. The measurements show an effective resolution of 10 bits using 0.5 V of supply voltage. The active occupied area is only 0.0045 mm2 and the Figure of Merit (FOM), which takes into account the energy required per conversion bit, is 0.43 pJ/bit. Furthermore, the results show low sensitivity to PVT variations due to the proposed ratiometric architecture. In addition, the sensor interface was connected to a commercial pressure transducer and the measurements of the resulting complete pressure sensor show a FOM of 0.226 pJ/bit with an effective linear resolution of 7.64 bits. The results validate the use of the proposed interface as part of a pressure sensor, and its low-power and low-voltage characteristics make it suitable for wireless sensor networks and low power consumer electronics.

  13. Bring your own camera to the trap: An inexpensive, versatile, and portable triggering system tested on wild hummingbirds.

    Science.gov (United States)

    Rico-Guevara, Alejandro; Mickley, James

    2017-07-01

    The study of animals in the wild offers opportunities to collect relevant information on their natural behavior and abilities to perform ecologically relevant tasks. However, it also poses challenges such as accounting for observer effects, human sensory limitations, and the time intensiveness of this type of research. To meet these challenges, field biologists have deployed camera traps to remotely record animal behavior in the wild. Despite their ubiquity in research, many commercial camera traps have limitations, and the species and behavior of interest may present unique challenges. For example, no camera traps support high-speed video recording. We present a new and inexpensive camera trap system that increases versatility by separating the camera from the triggering mechanism. Our system design can pair with virtually any camera and allows for independent positioning of a variety of sensors, all while being low-cost, lightweight, weatherproof, and energy efficient. By using our specialized trigger and customized sensor configurations, many limitations of commercial camera traps can be overcome. We use this system to study hummingbird feeding behavior using high-speed video cameras to capture fast movements and multiple sensors placed away from the camera to detect small body sizes. While designed for hummingbirds, our application can be extended to any system where specialized camera or sensor features are required, or commercial camera traps are cost-prohibitive, allowing camera trap use in more research avenues and by more researchers.

  14. The topogenic function of S4 promotes membrane insertion of the voltage-sensor domain in the KvAP channel.

    Science.gov (United States)

    Mishima, Eriko; Sato, Yoko; Nanatani, Kei; Hoshi, Naomi; Lee, Jong-Kook; Schiller, Nina; von Heijne, Gunnar; Sakaguchi, Masao; Uozumi, Nobuyuki

    2016-12-01

    Voltage-dependent K + (K V ) channels control K + permeability in response to shifts in the membrane potential. Voltage sensing in K V channels is mediated by the positively charged transmembrane domain S4. The best-characterized K V channel, KvAP, lacks the distinct hydrophilic region corresponding to the S3-S4 extracellular loop that is found in other K + channels. In the present study, we evaluated the topogenic properties of the transmembrane regions within the voltage-sensing domain in KvAP. S3 had low membrane insertion activity, whereas S4 possessed a unique type-I signal anchor (SA-I) function, which enabled it to insert into the membrane by itself. S4 was also found to function as a stop-transfer signal for retention in the membrane. The length and structural nature of the extracellular S3-S4 loop affected the membrane insertion of S3 and S4, suggesting that S3 membrane insertion was dependent on S4. Replacement of charged residues within the transmembrane regions with residues of opposite charge revealed that Asp 72 in S2 and Glu 93 in S3 contributed to membrane insertion of S3 and S4, and increased the stability of S4 in the membrane. These results indicate that the SA-I function of S4, unique among K + channels studied to date, promotes the insertion of S3 into the membrane, and that the charged residues essential for voltage sensing contribute to the membrane-insertion of the voltage sensor domain in KvAP. © 2016 The Author(s); published by Portland Press Limited on behalf of the Biochemical Society.

  15. Development and Application of a Wireless Sensor for Space Charge Density Measurement in an Ultra-High-Voltage, Direct-Current Environment.

    Science.gov (United States)

    Xin, Encheng; Ju, Yong; Yuan, Haiwen

    2016-10-20

    A space charge density wireless measurement system based on the idea of distributed measurement is proposed for collecting and monitoring the space charge density in an ultra-high-voltage direct-current (UHVDC) environment. The proposed system architecture is composed of a number of wireless nodes connected with space charge density sensors and a base station. The space charge density sensor based on atmospheric ion counter method is elaborated and developed, and the ARM microprocessor and Zigbee radio frequency module are applied. The wireless network communication quality and the relationship between energy consumption and transmission distance in the complicated electromagnetic environment is tested. Based on the experimental results, the proposed measurement system demonstrates that it can adapt to the complex electromagnetic environment under the UHVDC transmission lines and can accurately measure the space charge density.

  16. Current-transport studies and trap extraction of hydrothermally grown ZnO nanotubes using gold Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Amin, G.; Hussain, I.; Zaman, S.; Bano, N.; Nur, O.; Willander, M. [Department of Science and Technology, Campus Norrkoeping, Linkoeping University, 60174 Norrkoeping (Sweden)

    2010-03-15

    High-quality zinc oxide (ZnO) nanotubes (NTs) were grown by the hydrothermal technique on n-Si substrate. The room temperature (RT) current-transport mechanisms of Au Schottky diodes fabricated from ZnO NTs and nanorods (NRs) reference samples have been studied and compared. The tunneling mechanisms via deep-level states was found to be the main conduction process at low applied voltage but at the trap-filled limit voltage (V{sub TFL}) all traps were filled and the space-charge-limited current conduction was the dominating current-transport mechanism. The deep-level trap energy and the trap concentration for the NTs were obtained as {proportional_to}0.27 eV and 2.1 x 10{sup 16} cm{sup -3}, respectively. The same parameters were also extracted for the ZnO NRs. The deep-level states observed crossponds to zinc interstitials (Zn{sub i}), which are responsible for the violet emission. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  17. Transformer-assisted PWM zero-voltage switching pole inverter with high output bandwidth applied to linear motor drives

    NARCIS (Netherlands)

    Myrzik, J.M.A.; Duarte, J.L.; Haardt, de P.; Vissers, J.

    2002-01-01

    An application of the transformer-assisted PWM zero-voltage switching pole inverter (TRAP) is described in this paper. The TRAP is based on the auxiliary resonant commutated pole inverter (ARCP), but avoids its disadvantages. This paper describes the converter functionality and its applicability

  18. Photo-reactive charge trapping memory based on lanthanide complex

    Science.gov (United States)

    Zhuang, Jiaqing; Lo, Wai-Sum; Zhou, Li; Sun, Qi-Jun; Chan, Chi-Fai; Zhou, Ye; Han, Su-Ting; Yan, Yan; Wong, Wing-Tak; Wong, Ka-Leung; Roy, V. A. L.

    2015-10-01

    Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)3ppta (Eu(tta)3 = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 104 s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

  19. A thermal sensor for water using self-heated NTC thick-film segmented thermistors

    OpenAIRE

    Nikolić, Maria Vesna; Radojčić, B. M.; Aleksić, Obrad; Luković, Miloljub D.; Nikolić, Pantelija

    2011-01-01

    A simple thermal (heat loss) sensor system was designed in a small plastic tube housing using a negative thermal coefficient (NTC) thick-film thermistor as a self-heating sensor. The voltage power supply [range constant voltage (RCV)-range constant voltage] uses the measured input water temperature to select the applied voltage in steps (up and down) in order to enable operation of the sensor at optimal sensitivity for different water temperatures. The input water temperature was measured usi...

  20. Reversible hysteresis inversion in MoS2 field effect transistors

    DEFF Research Database (Denmark)

    Kaushik, Naveen; Mackenzie, David M. A.; Thakar, Kartikey

    2017-01-01

    . The intrinsic-oxide trap model has been corroborated through device simulations. Further, pulsed current–voltage (I–V) measurements were carried out to extract the trap time constants at different temperatures. Non-volatile memory and temperature sensor applications exploiting temperature dependent hysteresis...

  1. A CMOS Humidity Sensor for Passive RFID Sensing Applications

    Directory of Open Access Journals (Sweden)

    Fangming Deng

    2014-05-01

    Full Text Available This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs.

  2. A CMOS Humidity Sensor for Passive RFID Sensing Applications

    Science.gov (United States)

    Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

    2014-01-01

    This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 μW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs. PMID:24841250

  3. A CMOS humidity sensor for passive RFID sensing applications.

    Science.gov (United States)

    Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

    2014-05-16

    This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs.

  4. Control of a Two-Stage Direct Power Converter with a Single Voltage Sensor Mounted in the Intermediary Circuit

    DEFF Research Database (Denmark)

    Klumpner, Christian; Wheeler, P.; Blaabjerg, Frede

    2004-01-01

    Controlling a converter requires not only a powerful processors but also accurate voltage and current sensors and fast and precise analogue-digital converters, which increase the cost per kW of the assembly, especially in the low power range. A matrix converter requires less transducers than a back...... converters but in two stages (AC/DC/AC) without using energy storage in the intermediary circuit. They also offer the possibility to reduce the number of switches compared to the standard single-stage matrix converter. This paper presents a new method to control a two-stage DPC providing sine-wave in sine...

  5. SOGI-based capacitor voltage feedback active damping in LCL-filtered grid converters

    DEFF Research Database (Denmark)

    Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

    2015-01-01

    The capacitor voltage feedback active damping control is an attractive way to suppress LCL-filter resonance especially for the systems where the capacitor voltage is used for grid synchronization, since no extra sensors are added. The derivative is the core of the capacitor voltage feedback active...... derivative is more suited for capacitor voltage feedback active damping control. Experimental results validate the effectiveness of the proposed method....

  6. Action Potential Dynamics in Fine Axons Probed with an Axonally Targeted Optical Voltage Sensor.

    Science.gov (United States)

    Ma, Yihe; Bayguinov, Peter O; Jackson, Meyer B

    2017-01-01

    The complex and malleable conduction properties of axons determine how action potentials propagate through extensive axonal arbors to reach synaptic terminals. The excitability of axonal membranes plays a major role in neural circuit function, but because most axons are too thin for conventional electrical recording, their properties remain largely unexplored. To overcome this obstacle, we used a genetically encoded hybrid voltage sensor (hVOS) harboring an axonal targeting motif. Expressing this probe in transgenic mice enabled us to monitor voltage changes optically in two populations of axons in hippocampal slices, the large axons of dentate granule cells (mossy fibers) in the stratum lucidum of the CA3 region and the much finer axons of hilar mossy cells in the inner molecular layer of the dentate gyrus. Action potentials propagated with distinct velocities in each type of axon. Repetitive firing broadened action potentials in both populations, but at an intermediate frequency the degree of broadening differed. Repetitive firing also attenuated action potential amplitudes in both mossy cell and granule cell axons. These results indicate that the features of use-dependent action potential broadening, and possible failure, observed previously in large nerve terminals also appear in much finer unmyelinated axons. Subtle differences in the frequency dependences could influence the propagation of activity through different pathways to excite different populations of neurons. The axonally targeted hVOS probe used here opens up the diverse repertoire of neuronal processes to detailed biophysical study.

  7. A Power-Frequency Electric Field Sensor for Portable Measurement.

    Science.gov (United States)

    Xiao, Dongping; Ma, Qichao; Xie, Yutong; Zheng, Qi; Zhang, Zhanlong

    2018-03-31

    In this paper, a new type of electric field sensor is proposed for the health and safety protection of inspection staff in high-voltage environments. Compared with the traditional power frequency electric field measurement instruments, the portable instrument has some special performance requirements and, thus, a new kind of double spherical shell sensor is presented. First, the mathematical relationships between the induced voltage of the sensor, the output voltage of the measurement circuit, and the original electric field in free space are deduced theoretically. These equations show the principle of the proposed sensor to measure the electric field and the effect factors of the measurement. Next, the characteristics of the sensor are analyzed through simulation. The simulation results are in good agreement with the theoretical analysis. The influencing rules of the size and material of the sensor on the measurement results are summarized. Then, the proposed sensor and the matching measurement system are used in a physical experiment. After calibration, the error of the measurement system is discussed. Lastly, the directional characteristic of the proposed sensor is experimentally tested.

  8. A probe station for testing silicon sensors

    CERN Multimedia

    Ulysse, Fichet

    2017-01-01

    A probe station for testing silicon sensors. The probe station is located inside a dark box that can keep away light during the measurement. The set-up is located in the DSF (Department Silicon Facility). The golden plate is the "chuck" where the sensor is usually placed on. With the help of "manipulators", thin needles can be precisely positioned that can contact the sensor surface. Using these needles and the golden chuck, a high voltage can be applied to the sensor to test its behaviour under high voltage. We will use the silicon sensors that we test here for building prototypes of a highly granular sandwich calorimeter, the CMS HGC (Highly granular Calorimeter) upgrade for High-Luminosity LHC.

  9. Radiation effects on residual voltage of polyethylene films

    International Nuclear Information System (INIS)

    Kyokane, Jun; Park, Dae-Hee; Yoshino, Katsumi.

    1986-01-01

    It has recently been pointed out that diagnosis of deterioration in insulating materials for electric cables used in nuclear power plants and outer space (communications satellite in particular) can be effectively performed based on measurements of residual voltage. In the present study, polyethylene films are irradiated with γ-rays or electron beam to examine the changes in residual voltage characteristics. Irradiation of electron beam and γ-rays are carried out to a dose of 0 - 90 Mrad and 0 - 100 Mrad, respectively. Measurements are made of the dependence of residual voltage on applied voltage, electron beam and γ-ray irradiation, annealing temperature and annealing time. Results show that carriers, which are once trapped after being released from the electrode, move within the material after the opening of the circuit to produce resiual voltage. The residual voltage increases with increasing dose of electron beam or γ-ray and levels off at high dose. Residual voltage is increased about several times by either electron beam or γ-rays, but electron beam tends to cause greater residual voltage than γ-ray. Polyethylene films irradiated with electron beam can recover upon annealing. It is concluded from observations made that residual voltage has close relations with defects in molecular structures caused by radiations, particularly the breaking of backbone chains and alteration in superstructures. (Nogami, K.)

  10. Current voltage perspective of an organic electronic device

    Science.gov (United States)

    Mukherjee, Ayash K.; Kumari, Nikita

    2018-05-01

    Nonlinearity in current (I) - voltage (V) measurement is a well-known attribute of two-terminal organic device, irrespective of the geometrical or structural arrangement of the device. Most of the existing theories that are developed for interpretation of I-V data, either focus current-voltage relationship of charge injection mechanism across the electrode-organic material interface or charge transport mechanism through the organic active material. On the contrary, both the mechanisms work in tandem charge conduction through the device. The transport mechanism is further complicated by incoherent scattering from scattering centres/charge traps that are located at the electrode-organic material interface and in the bulk of organic material. In the present communication, a collective expression has been formulated that comprises of all the transport mechanisms that are occurring at various locations of a planar organic device. The model has been fitted to experimental I-V data of Au/P3HT/Au device with excellent degree of agreement. Certain physical parameters such as the effective area of cross-section and resistance due to charge traps have been extracted from the fit.

  11. Spectroscopic analysis of electron trapping levels in pentacene field-effect transistors

    International Nuclear Information System (INIS)

    Bum Park, Chang

    2014-01-01

    Electron trapping phenomena have been investigated with respect to the energy levels of localized trap states and bias-induced device instability effects in pentacene field-effect transistors. The mechanism of the photoinduced threshold voltage shift (ΔV T ) is presented by providing a ΔV T model governed by the electron trapping. The trap-and-release behaviour functionalized by photo-irradiation also shows that the trap state for electrons is associated with the energy levels in different positions in the forbidden gap of pentacene. Spectroscopic analysis identifies two kinds of electron trap states distributed above and below the energy of 2.5 eV in the band gap of the pentacene crystal. The study of photocurrent spectra shows the specific trap levels of electrons in energy space that play a substantial role in causing device instability. The shallow and deep trapping states are distributed at two centroidal energy levels of ∼1.8 and ∼2.67 eV in the pentacene band gap. Moreover, we present a systematic energy profile of electron trap states in the pentacene crystal for the first time. (paper)

  12. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z.; Cardwell, D.; Sasikumar, A.; Arehart, A. R.; Ringel, S. A., E-mail: ringel.5@osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Kyle, E. C. H.; Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106-5050 (United States); Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D. [Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)

    2016-04-28

    The impact of proton irradiation on the threshold voltage (V{sub T}) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of V{sub T} was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 10{sup 14} cm{sup −2}. Silvaco Atlas simulations of V{sub T} shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different V{sub T} dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed V{sub T} shifts. The proton irradiation induced V{sub T} shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

  13. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Zhang, Z.; Cardwell, D.; Sasikumar, A.; Arehart, A. R.; Ringel, S. A.; Kyle, E. C. H.; Speck, J. S.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.

    2016-01-01

    The impact of proton irradiation on the threshold voltage (V T ) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of V T was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 10 14  cm −2 . Silvaco Atlas simulations of V T shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different V T dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed V T shifts. The proton irradiation induced V T shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

  14. A Monolithic Active Pixel Sensor for ionizing radiation using a 180 nm HV-SOI process

    Energy Technology Data Exchange (ETDEWEB)

    Hemperek, Tomasz, E-mail: hemperek@uni-bonn.de; Kishishita, Tetsuichi; Krüger, Hans; Wermes, Norbert

    2015-10-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffers from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.

  15. Effects of vacuum ultraviolet irradiation on trapped charges and leakage currents of low-k organosilicate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, H.; Guo, X.; Pei, D.; Shohet, J. L. [Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Ryan, E. T. [GLOBALFOUNDRIES, Albany, New York 12203 (United States); Nishi, Y. [Stanford University, Stanford, California 94305 (United States)

    2015-05-11

    Vacuum ultraviolet (VUV) photoemission spectroscopy is utilized to investigate the distribution of trapped charges within the bandgap of low dielectric constant (low-k) organosilicate (SiCOH) materials. It was found that trapped charges are continuously distributed within the bandgap of porous SiCOH and the center of the trapped states is 1.3 eV above the valence band of the tested sample. By comparing photoemission spectroscopic results before and after VUV exposure, VUV irradiation with photon energies between 7.6 and 8.9 eV was found to deplete trapped charge while UV exposure with photon energies less than 6.0 eV induces more trapped charges in tested samples. Current-Voltage (IV) characteristics results show that the reliability of dielectrics is improved after VUV irradiation with photon energies between 7.6 and 8.9 eV, while UV exposure results in an increased level of leakage current and a decreased breakdown voltage, both of which are harmful to the reliability of the dielectric. This work shows that VUV irradiation holds the potential to substitute for UV curing in microelectronic processing to improve the reliability of low-k dielectrics by mitigating the leakage currents and trapped charges induced by UV irradiation.

  16. Gypsy moth (Lepidoptera: Lymantriidae) flight behavior and phenology based on field-deployed automated pheromone-baited traps

    Science.gov (United States)

    Patrick C. Tobin; Kenneth T. Klein; Donna S. Leonard

    2009-01-01

    Populations of the gypsy moth, Lymantria dispar (L.), are extensively monitored in the United States through the use of pheromone-baited traps.We report on use of automated pheromone-baited traps that use a recording sensor and data logger to record the unique date-time stamp of males as they enter the trap.We deployed a total of 352 automated traps...

  17. Trap-assisted and Langevin-type recombination in organic light-emitting diodes

    Science.gov (United States)

    Wetzelaer, G. A. H.; Kuik, M.; Nicolai, H. T.; Blom, P. W. M.

    2011-04-01

    Trapping of charges is known to play an important role in the charge transport of organic semiconductors, but the role of traps in the recombination process has not been addressed. Here we show that the ideality factor of the current of organic light-emitting diodes (OLEDs) in the diffusion-dominated regime has a temperature-independent value of 2, which reveals that nonradiative trap-assisted recombination dominates the current. In contrast, the ideality factor of the light output approaches unity, demonstrating that luminance is governed by recombination of the bimolecular Langevin type. This apparent contradiction can be resolved by measuring the current and luminance ideality factor for a white-emitting polymer, where both free and trapped charge carriers recombine radiatively. With increasing bias voltage, Langevin recombination becomes dominant over trap-assisted recombination due to its stronger dependence on carrier density, leading to an enhancement in OLED efficiency.

  18. Simulating the Long-Distance Propagation of Intense Beams in the Paul Trap Simulator Experiment

    CERN Document Server

    Gilson, Erik P; Davidson, Ronald C; Efthimion, Philip; Majeski, Richard; Startsev, Edward

    2005-01-01

    The Paul Trap Simulator Experiment (PTSX) makes use of a compact Paul trap configuration with quadrupolar oscillating wall voltages to simulate the propagation of intense charged particle beams over distances of many kilometers through magnetic alternating-gradient transport systems. The simulation is possible because of the similarity between the transverse dynamics of particles in the two systems. One-component pure cesium ion plasmas have been trapped that correspond to normalized intensity parameters s < 0.8, where s is the ratio of the square of the plasma frequency to twice the square of the average transverse focusing frequency. The PTSX device confines the plasma for hundreds of milliseconds, which is equivalent to beam propagation over tens of kilometers. Results are presented for experiments in which the amplitude of the oscillating confining voltage waveform has been modified as a function of time. A comparison is made between abrupt changes in amplitude and adiabatic changes in amplitude. T...

  19. A low voltage programmable unipolar inverter with a gold nanoparticle monolayer on plastic.

    Science.gov (United States)

    Zhou, Ye; Han, Su-Ting; Huang, Long-Biao; Huang, Jing; Yan, Yan; Zhou, Li; Roy, V A L

    2013-05-24

    A programmable low voltage unipolar inverter with saturated-load configuration has been demonstrated on a plastic substrate. A self-assembled monolayer of gold (Au) nanoparticles was inserted into the dielectric layer acting as a charge trapping layer. The inverter operated well with supply voltages of inverter. Furthermore, the programmable behavior was maintained well at various bending states, demonstrating the adequate flexibility of our devices.

  20. Time-dependence hole and electron trapping effects in SIMOX buried oxides

    International Nuclear Information System (INIS)

    Boesch, H.E. Jr.; Taylor, T.L.; Hite, L.R.; Bailey, W.E.

    1990-01-01

    Back-channel threshold shift associated with the buried oxide layers of separation by implanted oxygen (SIMOX) and zone-melted recrystallization (ZMR) field-effect transistors (FETs) was measured following pulsed irradiation as a function of temperature and back-gate bias using a fast time-resolved I-V measurement technique. The SIMOX FETs showed large initial negative voltage shifts at 0.2 ms after irradiation followed by temperature- and bias-dependent additional negative shifts to 800s. Analysis and modeling of the results indicate efficient deep trapping of radiation-generated holes in the bulk of the oxide, substantial initial trapping of radiation-generated electrons in the oxide, and rapid removal of the trapped electrons by a thermal detrapping process. The ZMR FETs showed evidence of substantial trapping of holes alone in the oxide bulk

  1. Discrimination Method of the Volatiles from Fresh Mushrooms by an Electronic Nose Using a Trapping System and Statistical Standardization to Reduce Sensor Value Variation

    Directory of Open Access Journals (Sweden)

    Kouki Fujioka

    2013-11-01

    Full Text Available Electronic noses have the benefit of obtaining smell information in a simple and objective manner, therefore, many applications have been developed for broad analysis areas such as food, drinks, cosmetics, medicine, and agriculture. However, measurement values from electronic noses have a tendency to vary under humidity or alcohol exposure conditions, since several types of sensors in the devices are affected by such variables. Consequently, we show three techniques for reducing the variation of sensor values: (1 using a trapping system to reduce the infering components; (2 performing statistical standardization (calculation of z-score; and (3 selecting suitable sensors. With these techniques, we discriminated the volatiles of four types of fresh mushrooms: golden needle (Flammulina velutipes, white mushroom (Agaricus bisporus, shiitake (Lentinus edodes, and eryngii (Pleurotus eryngii among six fresh mushrooms (hen of the woods (Grifola frondosa, shimeji (Hypsizygus marmoreus plus the above mushrooms. Additionally, we succeeded in discrimination of white mushroom, only comparing with artificial mushroom flavors, such as champignon flavor and truffle flavor. In conclusion, our techniques will expand the options to reduce variations in sensor values.

  2. A novel MR-compatible sensor to assess active medical device safety: stimulation monitoring, rectified radio frequency pulses, and gradient-induced voltage measurements.

    Science.gov (United States)

    Barbier, Thérèse; Aissani, Sarra; Weber, Nicolas; Pasquier, Cédric; Felblinger, Jacques

    2018-03-30

    To evaluate the function of an active implantable medical device (AIMD) during magnetic resonance imaging (MRI) scans. The induced voltages caused by the switching of magnetic field gradients and rectified radio frequency (RF) pulse were measured, along with the AIMD stimulations. An MRI-compatible voltage probe with a bandwidth of 0-40 kHz was designed. Measurements were carried out both on the bench with an overvoltage protection circuit commonly used for AIMD and with a pacemaker during MRI scans on a 1.5 T (64 MHz) MR scanner. The sensor exhibits a measurement range of ± 15 V with an amplitude resolution of 7 mV and a temporal resolution of 10 µs. Rectification was measured on the bench with the overvoltage protection circuit. Linear proportionality was confirmed between the induced voltage and the magnetic field gradient slew rate. The pacemaker pacing was recorded successfully during MRI scans. The characteristics of this low-frequency voltage probe allow its use with extreme RF transmission power and magnetic field gradient positioning for MR safety test of AIMD during MRI scans.

  3. Paul Trap Simulator Experiment (PTSX) to simulate intense beam propagation through a periodic focusing quadrupole field

    International Nuclear Information System (INIS)

    Davidson, Ronald C.; Efthimion, Philip C.; Gilson, Erik; Majeski, Richard; Qin, Hong

    2002-01-01

    The Paul Trap Simulator Experiment (PTSX) is under construction at the Princeton Plasma Physics Laboratory to simulate intense beam propagation through a periodic quadrupole magnetic field. In the Paul trap configuration, a long nonneutral plasma column is confined axially by dc voltages on end cylinders at z=+L and z=-L, and transverse confinement is provided by segmented cylindrical electrodes with applied oscillatory voltages ±V 0 (t) over 90 deg. segments. Because the transverse focusing force is similar in waveform to that produced by a discrete set of periodic quadrupole magnets in a frame moving with the beam, the Paul trap configuration offers the possibility of simulating intense beam propagation in a compact laboratory facility. The experimental layout is described, together with the planned experiments to study beam mismatch, envelope instabilities, halo particle production, and collective wave excitations

  4. Paul Trap Simulator Experiment (PTSX) to simulate intense beam propagation through a periodic focusing quadrupole field

    Science.gov (United States)

    Davidson, Ronald C.; Efthimion, Philip C.; Gilson, Erik; Majeski, Richard; Qin, Hong

    2002-01-01

    The Paul Trap Simulator Experiment (PTSX) is under construction at the Princeton Plasma Physics Laboratory to simulate intense beam propagation through a periodic quadrupole magnetic field. In the Paul trap configuration, a long nonneutral plasma column is confined axially by dc voltages on end cylinders at z=+L and z=-L, and transverse confinement is provided by segmented cylindrical electrodes with applied oscillatory voltages ±V0(t) over 90° segments. Because the transverse focusing force is similar in waveform to that produced by a discrete set of periodic quadrupole magnets in a frame moving with the beam, the Paul trap configuration offers the possibility of simulating intense beam propagation in a compact laboratory facility. The experimental layout is described, together with the planned experiments to study beam mismatch, envelope instabilities, halo particle production, and collective wave excitations.

  5. Faradaic AC Electrokinetic Flow and Particle Traps

    Science.gov (United States)

    Ben, Yuxing; Chang, Hsueh-Chia

    2004-11-01

    Faradaic reaction at higher voltages can produce co-ion polarization at AC electrodes instead of counter-ion polarization due to capacitive charging from the bulk. The Faradaic co-ion polarization also does not screen the external field and hence can produce large net electro-kinetic flows at frequencies lower than the inverse RC time of the double layer. Due to the opposite polarization of capacitve and Faradaic charging, we can reverse the direction of AC flows on electrodes by changing the voltage and frequency. Particles and bacteria are trapped and then dispersed at stagnation lines, at locations predicted by our theory, by using these two flows sequentially. This technique offers a good way to concentrate and detect bacteria.

  6. Mapping of trap densities and hotspots in pentacene thin-film transistors by frequency-resolved scanning photoresponse microscopy.

    Science.gov (United States)

    Westermeier, Christian; Fiebig, Matthias; Nickel, Bert

    2013-10-25

    Frequency-resolved scanning photoresponse microscopy of pentacene thin-film transistors is reported. The photoresponse pattern maps the in-plane distribution of trap states which is superimposed by the level of trap filling adjusted by the gate voltage of the transistor. Local hotspots in the photoresponse map thus indicate areas of high trap densities within the pentacene thin film. © 2013 WILEY-VCH Verlag GmbH 8 Co. KGaA, Weinheim.

  7. A Standard CMOS Humidity Sensor without Post-Processing

    OpenAIRE

    Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

    2011-01-01

    A 2 ?W power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 ?m CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023?10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

  8. The Role of Electron Transport and Trapping in MOS Total-Dose Modeling

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

    1999-01-01

    Radiation-induced hole and electron transport and trapping are fundamental to MOS total-dose models. Here we separate the effects of electron-hole annihilation and electron trapping on the neutralization of radiation-induced charge during switched-bias irradiation for hard and soft oxides, via combined thermally stimulated current (TSC) and capacitance-voltage measurements. We also show that present total-dose models cannot account for the thermal stability of deeply trapped electrons near the Si/SiO 2 interface, or the inability of electrons in deep or shallow traps to contribute to TSC at positive bias following (1) room-temperature, (2) high-temperature, or (3) switched-bias irradiation. These results require revisions of modeling parameters and boundary conditions for hole and electron transport in SiO 2 . The nature of deep and shallow electron traps in the near-interfacial SiO 2 is discussed

  9. A microwave powered sensor assembly for microwave ovens

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to a microwave powered sensor assembly for micro- wave ovens. The microwave powered sensor assembly comprises a microwave antenna for generating an RF antenna signal in response to microwave radiation at a predetermined excitation frequency. A dc power supply circuit...... of the microwave powered sensor assembly is operatively coupled to the RF antenna signal for extracting energy from the RF antenna signal and produce a power supply voltage. A sensor is connected to the power supply voltage and configured to measure a physical or chemical property of a food item under heating...... in a microwave oven chamber....

  10. Capacitance-voltage characteristics of GaAs ion-implanted structures

    Directory of Open Access Journals (Sweden)

    Privalov E. N.

    2008-08-01

    Full Text Available A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these structures which are due to the presence of deep traps are elucidated.

  11. Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

    Science.gov (United States)

    Degtiarenko, Pavel V [Williamsburg, VA; Popov, Vladimir E [Newport News, VA

    2011-03-22

    A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

  12. Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

    International Nuclear Information System (INIS)

    Li, Baikui; Tang, Xi; Chen, Kevin J.

    2015-01-01

    In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R on and/or threshold voltage V th of the HEMT. The results show that the recovery processes of both dynamic R on and threshold voltage V th of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs

  13. Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress

    International Nuclear Information System (INIS)

    Hsieh, Tien-Yu; Chang, Ting-Chang; Chen, Te-Chih; Tsai, Ming-Yen; Chen, Yu-Te

    2013-01-01

    This paper investigates the degradation mechanism of amorphous InGaZnO thin-film transistors under DC and AC gate bias stress. Comparing the degradation behavior at equal accumulated effective stress time, more pronounced threshold voltage shift under AC positive gate bias stress in comparison with DC stress indicates extra electron-trapping phenomenon that occurs in the duration of rising/falling time in pulse. Contrarily, illuminated AC negative gate bias stress exhibits much less threshold voltage shift than DC stress, suggesting that the photo-generated hole does not have sufficient time to drift to the interface of IGZO/gate insulator and causes hole-trapping under AC operation. Since the evolution of threshold voltage fits the stretched-exponential equation well, the different degradation tendencies under DC/AC stress can be attributed to the different electron- and hole-trapping efficiencies, and this is further verified by varying pulse waveform. - Highlights: ► Static and dynamic gate bias stresses are imposed on InGaZnO TFTs. ► Dynamic positive gate bias induces more pronounced threshold voltage shift. ► Static negative-bias illumination stress induces more severe threshold voltage shift. ► Evolution of threshold voltage fits the stretched-exponential equation well

  14. Uncooled tunneling infrared sensor

    Science.gov (United States)

    Kenny, Thomas W. (Inventor); Kaiser, William J. (Inventor); Podosek, Judith A. (Inventor); Vote, Erika C. (Inventor); Muller, Richard E. (Inventor); Maker, Paul D. (Inventor)

    1995-01-01

    An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane. The resulting infrared sensor can be miniaturized to pixel dimensions smaller than 100 .mu.m. An alternative embodiment is implemented using a corrugated membrane to permit large deflection without complicated clamping and high deflection voltages. The alternative embodiment also employs a pinhole aperture in a membrane to accommodate environmental temperature variation and a sealed chamber to eliminate environmental contamination of the tunneling electrodes and undesireable accoustic coupling to the sensor.

  15. An Analysis of Hole Trapping at Grain Boundary or Poly-Si Floating-Body MOSFET.

    Science.gov (United States)

    Jang, Taejin; Baek, Myung-Hyun; Kim, Hyungjin; Park, Byung-Gook

    2018-09-01

    In this paper, we demonstrate the characteristics of the floating body effect of poly-silicon with grain boundary by SENTAURUS™ TCAD simulation. As drain voltage increases, impact ionization occurs at the drain-channel junction. And these holes created by impact ionization are deposited on the bottom of the body to change the threshold voltage. This feature, the kink effect, is also observed in fully depleted silicon on insulator because grain boundary of the poly-silicon serve as a storage to trap the holes. We simulate the transfer curve depending on the density and position of the grain boundary. The trap density of the grain boundary affects the device characteristics significantly. However similar properties appear except where the grain boundary is located on the drain side.

  16. Humidity detection using chitosan film based sensor

    Science.gov (United States)

    Nasution, T. I.; Nainggolan, I.; Dalimunthe, D.; Balyan, M.; Cuana, R.; Khanifah, S.

    2018-02-01

    A humidity sensor made of the natural polymer chitosan has been successfully fabricated in the film form by a solution casting method. Humidity testing was performed by placing a chitosan film sensor in a cooling machine room, model KT-2000 Ahu. The testing results showed that the output voltage values of chitosan film sensor increased with the increase in humidity percentage. For the increase in humidity percentage from 30 to 90% showed that the output voltage of chitosan film sensor increased from 32.19 to 138.75 mV. It was also found that the sensor evidenced good repeatability and stability during the testing. Therefore, chitosan has a great potential to be used as new sensing material for the humidity detection of which was cheaper and environmentally friendly.

  17. Low-Cost Open-Source Voltage and Current Monitor for Gas Metal Arc Weld 3D Printing

    Directory of Open Access Journals (Sweden)

    A. Pinar

    2015-01-01

    Full Text Available Arduino open-source microcontrollers are well known in sensor applications for scientific equipment and for controlling RepRap 3D printers. Recently low-cost open-source gas metal arc weld (GMAW RepRap 3D printers have been developed. The entry-level welders used have minimal controls and therefore lack any real-time measurement of welder voltage or current. The preliminary work on process optimization of GMAW 3D printers requires a low-cost sensor and data logger system to measure welder current and voltage. This paper reports on the development of a low-cost open-source power measurement sensor system based on Arduino architecture. The sensor system was designed, built, and tested with two entry-level MIG welders. The full bill of materials and open source designs are provided. Voltage and current were measured while making stepwise adjustments to the manual voltage setting on the welder. Three conditions were tested while welding with steel and aluminum wire on steel substrates to assess the role of electrode material, shield gas, and welding velocity. The results showed that the open source sensor circuit performed as designed and could be constructed for <$100 in components representing a significant potential value through lateral scaling and replication in the 3D printing community.

  18. Steam distribution and energy delivery optimization using wireless sensors

    Science.gov (United States)

    Olama, Mohammed M.; Allgood, Glenn O.; Kuruganti, Teja P.; Sukumar, Sreenivas R.; Djouadi, Seddik M.; Lake, Joe E.

    2011-05-01

    The Extreme Measurement Communications Center at Oak Ridge National Laboratory (ORNL) explores the deployment of a wireless sensor system with a real-time measurement-based energy efficiency optimization framework in the ORNL campus. With particular focus on the 12-mile long steam distribution network in our campus, we propose an integrated system-level approach to optimize the energy delivery within the steam distribution system. We address the goal of achieving significant energy-saving in steam lines by monitoring and acting on leaking steam valves/traps. Our approach leverages an integrated wireless sensor and real-time monitoring capabilities. We make assessments on the real-time status of the distribution system by mounting acoustic sensors on the steam pipes/traps/valves and observe the state measurements of these sensors. Our assessments are based on analysis of the wireless sensor measurements. We describe Fourier-spectrum based algorithms that interpret acoustic vibration sensor data to characterize flows and classify the steam system status. We are able to present the sensor readings, steam flow, steam trap status and the assessed alerts as an interactive overlay within a web-based Google Earth geographic platform that enables decision makers to take remedial action. We believe our demonstration serves as an instantiation of a platform that extends implementation to include newer modalities to manage water flow, sewage and energy consumption.

  19. Chemical characterization of microparticles by laser ablation in an ion trap mass spectrometer

    International Nuclear Information System (INIS)

    Dale, J.M.; Whitten, W.B.; Ramsey, J.M.

    1991-01-01

    We are developing a new technique for the chemical characterization of microparticles based upon the use of electrodynamic traps. The electrodynamic trap has achieved widespread use in the mass spectrometry community in the form of the ion trap mass spectrometer or quadrupole ion trap. Small macroscopic particles can be confined or levitated within the electrode structure of a three-dimensional quadrupole electrodynamic trap in the same way as fundamental charges or molecular ions by using a combination of ac and dc potentials. Our concept is to use the same electrode structure to perform both microparticle levitation and ion trapping/mass analysis. The microparticle will first be trapped and spatially stabilized within the trap for characterization by optical probes, i.e., absorption, fluorescence, or Raman spectroscopy. After the particle has been optically characterized, it is further characterized using mass spectrometry. Ions are generated from the particle surface using laser ablation or desorption. The characteristics of the applied voltages are changed to trap the ions formed by the laser with the ions subsequently mass analyzed. The work described in this paper focuses on the ability to perform laser desorption experiments on microparticles contained within the ion trap

  20. STUDY OF THE IMPACT OF THERMAL DRIFT ON RELIABILITY OF PRESSURE SENSORS

    Directory of Open Access Journals (Sweden)

    ABDELAZIZ BEDDIAF

    2017-10-01

    Full Text Available Piezoresistive pressure sensors, using a Wheatstone bridge with the piezoresistors, are typically supplied with a voltage ranging from 3 to 10 V involve thermal drift caused by Joule heating. In this paper, an accurate numerical model for optimization and predicting the thermal drift in piezoresistive pressure sensors due to the electric heater in its piezoresistors is adopted. In this case, by using the solution of 2D heat transfer equation considering Joule heating in Cartesian coordinates for the transient regime, we determine how the temperature affects the sensor when the supply voltage is applied. For this, the elevation of temperature due to the Joule heating has been calculated for various values of supply voltage and for several operating times of the sensor; by varying different geometrical parameters. Otherwise, the variation of the coefficient 44 in p-Si and pressure sensitivity as a function of the applied potential, as well as, for various times, for different dimensions of the device, have been also established. It is observed that the electrical heating leads to an important temperature rise in the piezoresistor. Consequently, it causes drift in the pressure sensitivity of the sensor upon application of a voltage. Finally, this work allows us to evaluate the reliability of sensors. Also, it permits to predict their behaviour against temperature due to the application of a voltage of a bridge and to minimize this effect by optimizing the geometrical parameters of the sensor and by reducing the supply voltage.

  1. A study of the profile of the E3 electron trap in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Kourkoutas, C.D. (TEI Athens (Greece). Dept. of Physics Chemistry and Material Technology); Kovacs, B.; Szentpali, B.; Somogyi, K. (Research Inst. for Technical Physics, Budapest (Hungary)); Euthymiou, P.C. (Athens Univ. (Greece)); Giakoumakis, G.E. (Ioannina Univ. (Greece). Dept. of Physics)

    1994-01-01

    Electron irradiation at room temperature introduces in GaAs a donor type electronic state Tx at 0.18 eV, which is associated with the E3 electron trap. The presence of Tx is observed at depths d > 1.5 [mu]m, which correspond to the limits of the depletion region under the highest applied reverse bias voltage, while the E3 trap concentration drops off into the same region. (author).

  2. A study of the profile of the E3 electron trap in GaAs

    International Nuclear Information System (INIS)

    Kourkoutas, C.D.; Euthymiou, P.C.; Giakoumakis, G.E.

    1994-01-01

    Electron irradiation at room temperature introduces in GaAs a donor type electronic state Tx at 0.18 eV, which is associated with the E3 electron trap. The presence of Tx is observed at depths d > 1.5 μm, which correspond to the limits of the depletion region under the highest applied reverse bias voltage, while the E3 trap concentration drops off into the same region. (author)

  3. Voltage-gated proton channel is expressed on phagosomes

    International Nuclear Information System (INIS)

    Okochi, Yoshifumi; Sasaki, Mari; Iwasaki, Hirohide; Okamura, Yasushi

    2009-01-01

    Voltage-gated proton channel has been suggested to help NADPH oxidase activity during respiratory burst of phagocytes through its activities of compensating charge imbalance and regulation of pH. In phagocytes, robust production of reactive oxygen species occurs in closed membrane compartments, which are called phagosomes. However, direct evidence for the presence of voltage-gated proton channels in phagosome has been lacking. In this study, the expression of voltage-gated proton channels was studied by Western blot with the antibody specific to the voltage-sensor domain protein, VSOP/Hv1, that has recently been identified as the molecular correlate for the voltage-gated proton channel. Phagosomal membranes of neutrophils contain VSOP/Hv1 in accordance with subunits of NADPH oxidases, gp91, p22, p47 and p67. Superoxide anion production upon PMA activation was significantly reduced in neutrophils from VSOP/Hv1 knockout mice. These are consistent with the idea that voltage-gated proton channels help NADPH oxidase in phagocytes to produce reactive oxygen species.

  4. Performance improvement of charge-trap memory by using a stacked Zr_0_._4_6Si_0_._5_4O_2/Al_2O_3 charge-trapping layer

    International Nuclear Information System (INIS)

    Tang, Zhenjie; Hu, Dan; Zhang, Xiwei; Zhao, Yage; Li, Rong

    2016-01-01

    The postdeposition annealing (PDA)-treated charge-trap flash memory capacitor with stacked Zr_0_._4_6Si_0_._5_4O_2/Al_2O_3 charge-trapping layer flanked by a SiO_2 tunneling oxide and an Al_2O_3 blocking oxide was fabricated and investigated. It is observed that the memory capacitor exhibits prominent memory characteristics with large memory windows 12.8 V in a ±10 V gate sweeping voltage range, faster program/erase speed, and good data-retention characteristics even at 125 C compared to a single charge-trapping layer (Zr_0_._4_6Si_0_._5_4O_2, Zr_0_._7_9Si_0_._2_1O_2, and Zr_0_._4_6Al_1_._0_8O_2_._5_4). The quantum wells and introduced interfacial traps of the stacked trapping layer regulate the storage and loss behavior of charges, and jointly contribute to the improved memory characteristics. Hence, the memory capacitor with a stacked trapping layer is a promising candidate in future nonvolatile charge-trap memory device design and application. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. The origin of traps and the effect of nitrogen plasma in oxide-nitride-oxide structures for non-volatile memories

    International Nuclear Information System (INIS)

    Kim, W. S.; Kwak, D. W.; Oh, J. S.; Lee, D. W.; Cho, H. Y.

    2010-01-01

    Ultrathin oxide-nitride-oxide (ONO) dielectric stacked layers are fundamental structures of silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory devices in which information is known to be stored as charges trapped in silicon nitride. Deep-level transient spectroscopy (DLTS) and a capacitance-voltage (CV) analysis were introduced to observe the trap behavior related to the memory effect in memory devices. The DLTS results verified that the nitride-related traps were a dominant factor in the memory effect. The energy of hole traps was 0.307 eV above the balance band. To improve the memory effects of the non-volatile memory devices with ONO structures, we introduced a nitrogen plasma treatment. After the N-plasma treatment, the flat-band voltage shift (ΔV FB ) was increased by about 1.5 times. The program and the erase (P-E) characteristics were also shown to be better than those for the as-ONO structure. In addition, the retention characteristics were improved by over 2.4 times.

  6. Photonic characterization of capacitance-voltage characteristics in MOS capacitors and current-voltage characteristics in MOSFETs

    International Nuclear Information System (INIS)

    Kim, H. C.; Kim, H. T.; Cho, S. D.; Song, S. J.; Kim, Y. C.; Kim, S. K.; Chi, S. S.; Kim, D. J.; Kim, D. M.

    2002-01-01

    Based on the photonic high-frequency capacitance-voltage (HF-CV) response of MOS capacitors, a new characterization method is reported for the analysis of interface states in MOS systems. An optical source with a photonic energy less than the silicon band-gap energy (hv g ) is employed for the photonic HF-CV characterization of interface states distributed in the photoresponsive energy band (E C - hv t C ). If a uniform distribution of trap levels is assumed, the density of interface states (D it ) in the photoresponsive energy band of MOS capacitors, characterized by the new photonic HF-CV method, was observed to be D it = 1 ∼ 5 x 10 11 eV -1 cm -2 . Photonic current-voltage characteristics (I D - V GS , V DS ) of MOSFETs, which are under control of the photoconductive and the photovoltaic effects, are also investigated under optical illumination

  7. Potential role of voltage-sensing phosphatases in regulation of cell structure through the production of PI(3,4)P2.

    Science.gov (United States)

    Yamaguchi, Shinji; Kurokawa, Tatsuki; Taira, Ikuko; Aoki, Naoya; Sakata, Souhei; Okamura, Yasushi; Homma, Koichi J

    2014-04-01

    Voltage-sensing phosphatase, VSP, consists of the transmembrane domain, operating as the voltage sensor, and the cytoplasmic domain with phosphoinositide-phosphatase activities. The voltage sensor tightly couples with the cytoplasmic phosphatase and membrane depolarization induces dephosphorylation of several species of phosphoinositides. VSP gene is conserved from urochordate to human. There are some diversities among VSP ortholog proteins; range of voltage of voltage sensor motions as well as substrate selectivity. In contrast with recent understandings of biophysical mechanisms of VSPs, little is known about its physiological roles. Here we report that chick ortholog of VSP (designated as Gg-VSP) induces morphological feature of cell process outgrowths with round cell body in DF-1 fibroblasts upon its forced expression. Expression of the voltage sensor mutant, Gg-VSPR153Q with shifted voltage dependence to a lower voltage led to more frequent changes of cell morphology than the wild-type protein. Coexpression of PTEN that dephosphorylates PI(3,4)P2 suppressed this effect by Gg-VSP, indicating that the increase of PI(3,4)P2 leads to changes of cell shape. In addition, visualization of PI(3,4)P2 with the fluorescent protein fused with the TAPP1-derived pleckstrin homology (PH) domain suggested that Gg-VSP influenced the distribution of PI(3,4)P2 . These findings raise a possibility that one of the VSP's functions could be to regulate cell morphology through voltage-sensitive tuning of phosphoinositide profile. © 2013 Wiley Periodicals, Inc.

  8. Direct trace analysis of metals and alloys in a quadrupole ion-trap mass spectrometer

    CERN Document Server

    Song, K S; Yang, M; Cha, H K; Lee, J M; Lee, G H

    1999-01-01

    An ion-trap mass spectrometer adopting a quadrupole ion-trap and laser ablation/ionization method was constructed. The developed system was tested for composition analysis of some metals (Cu, stainless), and alloys (hastalloy C, mumetal) by mass spectrometry. Samples were analyzed by using laser ablation from a sample probe tip followed by a mass analysis with the quadrupole ion-trap. The quadrupole ion-trap was modified to enable laser ablation by a XeCl excimer laser pulse that passed radially through the ring electrode. A mass scan of the produced ions was performed in the mass selective instability mode wherein trapped ions were successively detected by increasing the rf voltage through the ring electrode. Factors affecting the mass resolution, such as pressure of buffer gas and ablation laser power, are discussed.

  9. The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China)

    2014-01-28

    Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

  10. Study of surface properties of ATLAS12 strip sensors and their radiation resistance

    Energy Technology Data Exchange (ETDEWEB)

    Mikestikova, M., E-mail: mikestik@fzu.cz [Academy of Sciences of the Czech Republic, Institute of Physics, Na Slovance 2, 18221 Prague 8 (Czech Republic); Allport, P.P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J.P.; Wilson, J.A. [School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT (United Kingdom); Kierstead, J.; Kuczewski, P.; Lynn, D. [Brookhaven National Laboratory, Physics Department and Instrumentation Division, Upton, NY 11973-5000 (United States); Hommels, L.B.A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Ullan, M. [Centro Nacional de Microelectronica (IMB-CNM, CSIC), Campus UAB-Bellaterra, 08193 Barcelona (Spain); Bloch, I.; Gregor, I.M.; Tackmann, K. [DESY, Notkestrasse 85, 22607 Hamburg (Germany); Hauser, M.; Jakobs, K.; Kuehn, S. [Physikalisches Institut, Universität Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); and others

    2016-09-21

    A radiation hard n{sup +}-in-p micro-strip sensor for the use in the Upgrade of the strip tracker of the ATLAS experiment at the High Luminosity Large Hadron Collider (HL-LHC) has been developed by the “ATLAS ITk Strip Sensor collaboration” and produced by Hamamatsu Photonics. Surface properties of different types of end-cap and barrel miniature sensors of the latest sensor design ATLAS12 have been studied before and after irradiation. The tested barrel sensors vary in “punch-through protection” (PTP) structure, and the end-cap sensors, whose stereo-strips differ in fan geometry, in strip pitch and in edge strip ganging options. Sensors have been irradiated with proton fluences of up to 1×10{sup 16} n{sub eq}/cm{sup 2}, by reactor neutron fluence of 1×10{sup 15} n{sub eq}/cm{sup 2} and by gamma rays from {sup 60}Co up to dose of 1 MGy. The main goal of the present study is to characterize the leakage current for micro-discharge breakdown voltage estimation, the inter-strip resistance and capacitance, the bias resistance and the effectiveness of PTP structures as a function of bias voltage and fluence. It has been verified that the ATLAS12 sensors have high breakdown voltage well above the operational voltage which implies that different geometries of sensors do not influence their stability. The inter-strip isolation is a strong function of irradiation fluence, however the sensor performance is acceptable in the expected range for HL-LHC. New gated PTP structure exhibits low PTP onset voltage and sharp cut-off of effective resistance even at the highest tested radiation fluence. The inter-strip capacitance complies with the technical specification required before irradiation and no radiation-induced degradation was observed. A summary of ATLAS12 sensors tests is presented including a comparison of results from different irradiation sites. The measured characteristics are compared with the previous prototype of the sensor design, ATLAS07. - Highlights:

  11. CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles

    CERN Document Server

    Guilloux, F.; Degerli, Y.; Elhosni, M.; Guyot, C.; Hemperek, T.; Lachkar, M.; Meyer, JP.; Ouraou, A.; Schwemling, P.; Vandenbroucke, M.

    2018-01-01

    The increase of luminosity foreseen for the Phase-II HL-LHC upgrades calls for new solutions to fight against the expected pile-up effects. One approach is to measure very accurately the time of arrival of the particles with a resolution of a few tens of picoseconds. In addition, a spatial granularity better than a few millimeter will be needed to obtain a fake jet rejection rate acceptable for physics analysis. These goals could be achieved by using the intrinsic benefits of a standard High-Voltage CMOS technology – in conjunction with a high-resistivity detector material – leading to a fast, integrated, rad-hard, fully depleted monolithic active pixel sensor ASIC.

  12. Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2015-03-02

    In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R{sub on} and/or threshold voltage V{sub th} of the HEMT. The results show that the recovery processes of both dynamic R{sub on} and threshold voltage V{sub th} of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs.

  13. An efficient biosensor made of an electromagnetic trap and a magneto-resistive sensor

    KAUST Repository

    Li, Fuquan; Kosel, Jü rgen

    2014-01-01

    . In this paper, we report a new setup for magnetic biosensors, replacing the conventional "sandwich" concept with an electromagnetic trap. We demonstrate the capability of the biosensor in the detection of E. coli. The trap is formed by a current

  14. PENTATRAP. A novel Penning-trap system for high-precision mass measurements

    Energy Technology Data Exchange (ETDEWEB)

    Doerr, Andreas

    2015-01-21

    The novel Penning-trap mass spectrometer PENTATRAP aims at mass-ratio determinations of medium-heavy to heavy ions with relative uncertainties below 10{sup -11}. From the mass ratios of certain ion species, the corresponding mass differences will be determined with sub-eV/c{sup 2} uncertainties. These mass differences are relevant for neutrino-mass experiments, a test of special relativity and tests of bound-state QED. Means to obtain the required precision are very stable trapping fields, the use of highly-charged ions produced by EBITs, a non-destructive cyclotron-frequency determination scheme employing detectors with single-ion sensitivity and a five-trap tower, that allows for measurement schemes being insensitive to magnetic field drifts. Within this thesis, part of the detection electronics was set up and tested under experimental conditions. A single-trap setup was realized. A Faraday cup in the trap tower enabled the proper adjustment of the settings of the beamline connecting the EBIT and the Penning-trap system, resulting in the first trapping of ions at PENTATRAP. A stabilization of switched voltages in the beamline and detailed studies of ion bunch characteristics allowed for reproducible loading of only a few ions. Detection of the axial oscillation of the trapped ions gave hints that in some cases, even single ions had been trapped. Furthermore, valuable conclusions about necessary modifications of the setup could be drawn.

  15. Microfluidic Trap Arrays: Passive Sensors for Studying Aquatic Protozoan Ecology and Biogeography

    Science.gov (United States)

    Chau, J. F.; Bouchillon, G.; Shor, L. M.

    2012-12-01

    Microscopic organisms such as bacteria and protozoa are the engine that drives global biogeochemical processes: microbes fix carbon, produce oxygen, mediate nutrient cycling, and break down anthropogenic contaminants. In many habitats, the bacterial community structure and its net production is controlled in a top-down fashion by predation by protozoa. Despite their importance, many researchers have noted a significant gap in our understanding of their diversity, biogeography, and ecosystem function. We developed a microfluidic field sampling and analysis tool to study the biogeography and function of microbial eukaryotes. Microfluidic samplers were created to systematically target the morphology, function, and habitat of different microbial eukaryotes. Features such as channel dimensions, branching angles and radii of curvature were varied to allow organisms to be selected and captured based on cell size, shape, plasticity, and swimming or crawling modalities. We also developed genetic analysis protocols to extract and amplify DNA from a single trapped cell, allowing for molecular identification of trapped species. Results from freshwater sediment and water column deployments confirmed design efficiencies in trapping and concentrating protozoa based on biomass density, allowed for analysis of body plasticity and cell size, and also confirmed the viability of this technology for future real time monitoring of protozoa in aquatic ecosystems. This research offers a radical departure from existing approaches to study microbial eukaryotic communities in the field. Our novel methodology involving trapping, observation and recording of physical characteristics and genetic analysis of single cells allows comparison with bulk samples to place trapped microbes within a function- and habitat-specific context.

  16. The Multipole Plasma Trap-PIC Modeling Results

    Science.gov (United States)

    Hicks, Nathaniel; Bowman, Amanda; Godden, Katarina

    2017-10-01

    A radio-frequency (RF) multipole structure is studied via particle-in-cell computer modeling, to assess the response of quasi-neutral plasma to the imposed RF fields. Several regimes, such as pair plasma, antimatter plasma, and conventional (ion-electron) plasma are considered. In the case of equal charge-to-mass ratio of plasma species, the effects of the multipole field are symmetric between positive and negative particles. In the case of a charge-to-mass disparity, the multipole RF parameters (frequency, voltage, structure size) may be chosen such that the light species (e.g. electrons) is strongly confined, while the heavy species (e.g. positive ions) does not respond to the RF field. In this case, the trapped negative space charge creates a potential well that then traps the positive species. 2D and 3D particle-in-cell simulations of this concept are presented, to assess plasma response and trapping dependences on multipole order, consequences of the formation of an RF plasma sheath, and the effects of an axial magnetic field. The scalings of trapped plasma parameters are explored in each of the mentioned regimes, to guide the design of prospective experiments investigating each. Supported by U.S. NSF/DOE Partnership in Basic Plasma Science and Engineering Grant PHY-1619615.

  17. Design of a Humidity Sensor Tag for Passive Wireless Applications.

    Science.gov (United States)

    Wu, Xiang; Deng, Fangming; Hao, Yong; Fu, Zhihui; Zhang, Lihua

    2015-10-07

    This paper presents a wireless humidity sensor tag for low-cost and low-power applications. The proposed humidity sensor tag, based on radio frequency identification (RFID) technology, was fabricated in a standard 0.18 μm complementary metal oxide semiconductor (CMOS) process. The top metal layer was deposited to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture, resulting in a flat power conversion efficiency curve. The capacitive sensor interface, based on phase-locked loop (PLL) theory, employs a simple architecture and can work with 0.5 V supply voltage. The measurement results show that humidity sensor tag achieves excellent linearity, hysteresis and stability performance. The total power-dissipation of the sensor tag is 2.5 μW, resulting in a maximum operating distance of 23 m under 4 W of radiation power of the RFID reader.

  18. An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects

    Science.gov (United States)

    Hema Lata Rao, M.; Narasimha Murty, N. V. L.

    2015-01-01

    An improved analytical model for the current—voltage (I-V) characteristics of the 4H-SiC metal semiconductor field effect transistor (MESFET) on a high purity semi-insulating (HPSI) substrate with trapping and thermal effects is presented. The 4H-SiC MESFET structure includes a stack of HPSI substrates and a uniformly doped channel layer. The trapping effects include both the effect of multiple deep-level traps in the substrate and surface traps between the gate to source/drain. The self-heating effects are also incorporated to obtain the accurate and realistic nature of the analytical model. The importance of the proposed model is emphasised through the inclusion of the recent and exact nature of the traps in the 4H-SiC HPSI substrate responsible for substrate compensation. The analytical model is used to exhibit DC I-V characteristics of the device with and without trapping and thermal effects. From the results, the current degradation is observed due to the surface and substrate trapping effects and the negative conductance introduced by the self-heating effect at a high drain voltage. The calculated results are compared with reported experimental and two-dimensional simulations (Silvaco®-TCAD). The proposed model also illustrates the effectiveness of the gate—source distance scaling effect compared to the gate—drain scaling effect in optimizing 4H-SiC MESFET performance. Results demonstrate that the proposed I-V model of 4H-SiC MESFET is suitable for realizing SiC based monolithic circuits (MMICs) on HPSI substrates.

  19. An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects

    International Nuclear Information System (INIS)

    Rao, M. Hema Lata; Murty, N. V. L. Narasimha

    2015-01-01

    An improved analytical model for the current—voltage (I–V) characteristics of the 4H-SiC metal semiconductor field effect transistor (MESFET) on a high purity semi-insulating (HPSI) substrate with trapping and thermal effects is presented. The 4H-SiC MESFET structure includes a stack of HPSI substrates and a uniformly doped channel layer. The trapping effects include both the effect of multiple deep-level traps in the substrate and surface traps between the gate to source/drain. The self-heating effects are also incorporated to obtain the accurate and realistic nature of the analytical model. The importance of the proposed model is emphasised through the inclusion of the recent and exact nature of the traps in the 4H-SiC HPSI substrate responsible for substrate compensation. The analytical model is used to exhibit DC I–V characteristics of the device with and without trapping and thermal effects. From the results, the current degradation is observed due to the surface and substrate trapping effects and the negative conductance introduced by the self-heating effect at a high drain voltage. The calculated results are compared with reported experimental and two-dimensional simulations (Silvaco®-TCAD). The proposed model also illustrates the effectiveness of the gate—source distance scaling effect compared to the gate—drain scaling effect in optimizing 4H-SiC MESFET performance. Results demonstrate that the proposed I–V model of 4H-SiC MESFET is suitable for realizing SiC based monolithic circuits (MMICs) on HPSI substrates. (semiconductor devices)

  20. Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

    International Nuclear Information System (INIS)

    Choi, Sangmoo; Yang, Hyundeok; Chang, Man; Baek, Sungkweon; Hwang, Hyunsang; Jeon, Sanghun; Kim, Juhyung; Kim, Chungwoo

    2005-01-01

    Silicon nitride with silicon nanocrystals formed by low-energy silicon plasma immersion ion implantation has been investigated as a charge trapping layer of a polycrystalline silicon-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without silicon nanocrystals, silicon nitride with silicon nanocrystals provides excellent memory characteristics, such as larger width of capacitance-voltage hysteresis, higher program/erase speed, and lower charge loss rate at elevated temperature. These improved memory characteristics are derived by incorporation of silicon nanocrystals into the charge trapping layer as additional accessible charge traps with a deeper effective trap energy level

  1. The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress

    Science.gov (United States)

    Rhee, Jihyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Ko, Daehyun; Ahn, Geumho; Jung, Haesun; Choi, Sung-Jin; Myong Kim, Dong; Kim, Dae Hwan

    2018-02-01

    Experimental extraction of the electron trap parameters which are associated with charge trapping into gate insulators under the positive bias temperature stress (PBTS) is proposed and demonstrated for the first time in amorphous indium-gallium-zinc-oxide thin-film transistors. This was done by combining the PBTS/recovery time-evolution of the experimentally decomposed threshold voltage shift (ΔVT) and the technology computer-aided design (TCAD)-based charge trapping simulation. The extracted parameters were the trap density (NOT) = 2.6 × 1018 cm-3, the trap energy level (ΔET) = 0.6 eV, and the capture cross section (σ0) = 3 × 10-19 cm2. Furthermore, based on the established TCAD framework, the relationship between the electron trap parameters and the activation energy (Ea) is comprehensively investigated. It is found that Ea increases with an increase in σ0, whereas Ea is independent of NOT. In addition, as ΔET increases, Ea decreases in the electron trapping-dominant regime (low ΔET) and increases again in the Poole-Frenkel (PF) emission/hopping-dominant regime (high ΔET). Moreover, our results suggest that the cross-over ΔET point originates from the complicated temperature-dependent competition between the capture rate and the emission rate. The PBTS bias dependence of the relationship between Ea and ΔET suggests that the electric field dependence of the PF emission-based electron hopping is stronger than that of the thermionic field emission-based electron trapping.

  2. Design of a radiation hard silicon pixel sensor for X-ray science

    Energy Technology Data Exchange (ETDEWEB)

    Schwandt, Joern

    2014-06-15

    At DESY Hamburg the European X-ray Free-Electron Laser (EuXFEL) is presently under construction. The EuXFEL has unique properties with respect to X-ray energy, instantaneous intensity, pulse length, coherence and number of pulses/sec. These properties of the EuXFEL pose very demanding requirements for imaging detectors. One of the detector systems which is currently under development to meet these challenges is the Adaptive Gain Integrating Pixel Detector, AGIPD. It is a hybrid pixel-detector system with 1024 x 1024 p{sup +} pixels of dimensions 200 μm x 200 μm, made of 16 p{sup +}nn{sup +}- silicon sensors, each with 10.52 cm x 2.56 cm sensitive area and 500 μm thickness. The particular requirements for the AGIPD are a separation between noise and single photons down to energies of 5 keV, more than 10{sup 4} photons per pixel for a pulse duration of less than 100 fs, negligible pile-up at the EuXFEL repetition rate of 4.5 MHz, operation for X-ray doses up to 1 GGy, good efficiency for X-rays with energies between 5 and 20 keV, and minimal inactive regions at the edges. The main challenge in the sensor design is the required radiation tolerance and high operational voltage, which is required to reduce the so-called plasma effect. This requires a specially optimized sensor. The X-ray radiation damage results in a build-up of oxide charges and interface traps which lead to a reduction of the breakdown voltage, increased leakage current, increased interpixel capacitances and charge losses. Extensive TCAD simulations have been performed to understand the impact of X-ray radiation damage on the detector performance and optimize the sensor design. To take radiation damage into account in the simulation, radiation damage parameters have been determined on MOS capacitors and gate-controlled diodes as function of dose. The optimized sensor design was fabricated by SINTEF. Irradiation tests on test structures and sensors show that the sensor design is radiation hard and

  3. Flux Trapping Properties of Bulk HIGH-TC Superconductors in Static Field-Cooling Magnetization

    Science.gov (United States)

    Deng, Z.; Tsuzuki, K.; Miki, M.; Felder, B.; Hara, S.; Izumi, M.

    2013-06-01

    The trapping process and saturation effect of trapped magnetic flux of bulk high-temperature superconductors by static field-cooling magnetization (FCM) are reported in the paper. With a cryogenic Bell Hall sensor attached on the center of the bulk surface, the synchronous magnetic signals were recorded during the whole magnetization process. It enables us to know the flux trapping behavior since the removal of the excitation field, as well as the subsequent flux relaxation phenomenon and the flux dissipation in the quench process of the bulk sample. With the help of flux mapping techniques, the relationship between the trapped flux and the applied field was further investigated; the saturation effect of trapped flux was discussed by comparing the peak trapped field and total magnetic flux of the bulk sample. These studies are useful to understand the basic flux trapping properties of bulk superconductors.

  4. A magnetic method to concentrate and trap biological targets

    KAUST Repository

    Li, Fuquan

    2012-11-01

    Magnetoresistive sensors in combination with magnetic particles have been used in biological applications due to, e.g., their small size and high sensitivity. A growing interest is to integrate magnetoresistive sensors with microchannels and electronics to fabricate devices that can perform complex analyses. A major task in such systems is to immobilize magnetic particles on top of the sensor surface, which is required to detect the particles\\' stray field. In the presented work, a bead concentrator, consisting of gold microstructures, at the bottom of a microchannel, is used to attract and move magnetic particles into a trap. The trap is made of a chamber with a gold microstructure underneath and is used to attract and immobilize a defined number of magnetic beads. In order to detect targets, two kinds of solutions were prepared; one containing only superparamagnetic particles, the other one containing beads with the protein Bovine serum albumin as the target and fluorescent markers. Due to the size difference between bare beads and beads with target, less magnetic beads were immobilized inside the volume chamber in case of magnetic beads with target as compared to bare magnetic beads. © 1965-2012 IEEE.

  5. A Magnetic Sensor System for Biological Detection

    KAUST Repository

    Li, Fuquan

    2015-05-01

    Magnetic biosensors detect biological targets through sensing the stray field of magnetic beads which label the targets. Commonly, magnetic biosensors employ the “sandwich” method to immobilize biological targets, i.e., the targets are sandwiched between a bio-functionalized sensor surface and bio-functionalized magnetic beads. This method has been used very successfully in different application, but its execution requires a rather elaborate procedure including several washing and incubation steps. This dissertation investigates a new magnetic biosensor concept, which enables a simple and effective detection of biological targets. The biosensor takes advantage of the size difference between bare magnetic beads and compounds of magnetic beads and biological targets. First, the detection of super-paramagnetic beads via magnetic tunnel junction (MTJ) sensors is implemented. Frequency modulation is used to enhance the signal-to-noise ratio, enabling the detection of a single magnetic bead. Second, the concept of the magnetic biosensor is investigated theoretically. The biosensor consists of an MTJ sensor, which detects the stray field of magnetic beads inside of a trap on top of the MTJ. A microwire between the trap and the MTJ is used to attract magnetic beads to the trapping well by applying a current to it. The MTJ sensor’s output depends on the number of beads inside the trap. If biological targets are in the sample solution, the beads will form bead compounds consisting of beads linked to the biological targets. Since bead compounds are larger than bare beads, the number of beads inside the trapping well will depend on the presence of biological targets. Hence, the output of the MTJ sensor will depend on the biological targets. The dependences of sensor signals on the sizes of the MTJ sensor, magnetic beads and biological targets are studied to find the optimum constellations for the detection of specific biological targets. The optimization is demonstrated

  6. The effect of dopant-induced electron traps on spectrum evolution of doped organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Zhan, Y.Q. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China)]. E-mail: yqzhan@fudan.edu.cn; Zhou, J. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Zhou, Y.C. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Wu, Y. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Yang, H. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Li, F.Y. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Ding, X.M. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Hou, X.Y. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China)]. E-mail: xyhou@fudan.edu.cn

    2007-05-07

    A prototype of light emitting device with two symmetrically located Al/LiF electrodes is fabricated to study the voltage dependence of emission spectra. 4-(dicyanomethylene)-2-methyl-6- (pdimethylaminostyryl)-4H-pyran doped tris-(8-hydroxy-quinolinato) aluminum thin film is the emitting layer of the device. Experiments show that with increasing applied voltage the emission intensity of the device decreases, of which the dopant emission intensity decreases more steeply than that of the host. Based on the theory of space-charge-limited current in insulator with a single shallow trap level it is deduced that the photoluminescence intensity of the dopant emission decreases linearly with applied voltage, in good agreement with experimental measurements. The evolution of the emission spectra can be well explained by the suggested mechanism that the electrons are trapped in the dopant molecules, which blocks the energy transfer from the host, and leads to more excitons in the host to emit light.

  7. The effect of dopant-induced electron traps on spectrum evolution of doped organic light-emitting devices

    International Nuclear Information System (INIS)

    Zhan, Y.Q.; Zhou, J.; Zhou, Y.C.; Wu, Y.; Yang, H.; Li, F.Y.; Ding, X.M.; Hou, X.Y.

    2007-01-01

    A prototype of light emitting device with two symmetrically located Al/LiF electrodes is fabricated to study the voltage dependence of emission spectra. 4-(dicyanomethylene)-2-methyl-6- (pdimethylaminostyryl)-4H-pyran doped tris-(8-hydroxy-quinolinato) aluminum thin film is the emitting layer of the device. Experiments show that with increasing applied voltage the emission intensity of the device decreases, of which the dopant emission intensity decreases more steeply than that of the host. Based on the theory of space-charge-limited current in insulator with a single shallow trap level it is deduced that the photoluminescence intensity of the dopant emission decreases linearly with applied voltage, in good agreement with experimental measurements. The evolution of the emission spectra can be well explained by the suggested mechanism that the electrons are trapped in the dopant molecules, which blocks the energy transfer from the host, and leads to more excitons in the host to emit light

  8. Microbial fuel cells as power supply of a low-power temperature sensor

    Science.gov (United States)

    Khaled, Firas; Ondel, Olivier; Allard, Bruno

    2016-02-01

    Microbial fuel cells (MFCs) show great promise as a concomitant process for water treatment and as renewable energy sources for environmental sensors. The small energy produced by MFCs and the low output voltage limit the applications of MFCs. Specific converter topologies are required to step-up the output voltage of a MFC. A Power Management Unit (PMU) is proposed for operation at low input voltage and at very low power in a completely autonomous way to capture energy from MFCs with the highest possible efficiency. The application of sensors for monitoring systems in remote locations is an important approach. MFCs could be an alternative energy source in this case. Powering a sensor with MFCs may prove the fact that wastewater may be partly turned into renewable energy for realistic applications. The Power Management Unit is demonstrated for 3.6 V output voltage at 1 mW continuous power, based on a low-cost 0.7-L MFC. A temperature sensor may operate continuously on 2-MFCs in continuous flow mode. A flyback converter under discontinuous conduction mode is also tested to power the sensor. One continuously fed MFC was able to efficiently and continuously power the sensor.

  9. Capacitance–voltage and current–voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy

    International Nuclear Information System (INIS)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-01-01

    Highlights: ► The cause of high background doping was confirmed and characterized. ► The current–voltage characteristics deviate from the thermionic emission. ► The recombination current is attributed to a hole trap (E V + 0.52 eV). ► The hole trap (E V + 0.52 eV) was confirmed by DLTS measurements. -- Abstract: The temperature dependence of capacitance–voltage (C–V) and current voltage (I–V) characteristics were used to study the cause of high background doping and the underlying current transport mechanisms in GaAsN Schottky diode grown by chemical beam epitaxy (CBE). In one hand, a nitrogen-related sigmoid increase of junction capacitance and ionized acceptor concentration was observed in the temperature range 70–100 K and was attributed to the thermal ionization of a nitrogen–hydrogen-related deep acceptor-state, with thermal activation energy of approximately 0.11 eV above the valence band maximum (VBM) of GaAsN. This acceptor state is mainly responsible for the high background doping in unintentionally doped GaAsN grown by CBE. On the other hand, the I–V characteristics at different temperatures were found to deviate from the well known pure thermionic-emission mechanism. Based on their fitting at each temperature, the recombination current in the space charge region of GaAsN Schottky diode was mainly attributed to a hole trap, localized at 0.51 eV above the VBM. Given the accuracy of measurements, this result was confirmed by deep level transient spectroscopy measurements. Nevertheless, considering the Shockley–Read–Hall model of generation-recombination, the recombination activity of this defect was quantified and qualified to be weak compared with the markedly degradation of minority carrier lifetime in GaAsN material

  10. Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on- 200 mm Si

    Science.gov (United States)

    Kumar, Sandeep; Remesh, Nayana; Dolmanan, S. B.; Tripathy, S.; Raghavan, S.; Muralidharan, R.; Nath, Digbijoy N.

    2017-11-01

    We report on the characterization of the interfaces of Al2O3/InAlN/GaN HEMT structure grown on 200 mm diameter silicon using conductance dispersion technique. Irreversible threshold voltage (VTH) shift of up to +∼2.5 V was observed due to the gate stress induced activation of acceptor states. Further, frequency dependent VTH shift during capacitance voltage measurements were also recorded due to the presence of slow traps at InAlN/GaN interface. The conductance dispersion indicated the presence of acceptor traps of the order of ∼4 × 1012 to 7 × 1013 cm-2 eV-1 with a time constant of ∼10 to 350 μs at the InAlN/GaN interface. Trap density at the Al2O3/InAlN was found to be in similar range but with a time constant of ∼2 μs. The presence of high density of traps at InAlN/GaN interface is attributed to the unavoidable growth interruption before the start of InAlN growth.

  11. Influence of Ambient Humidity on the Voltage Response of Ionic Polymer-Metal Composite Sensor.

    Science.gov (United States)

    Zhu, Zicai; Horiuchi, Tetsuya; Kruusamäe, Karl; Chang, Longfei; Asaka, Kinji

    2016-03-31

    Electrical potential based on ion migration exists not only in natural systems but also in ionic polymer materials. In order to investigate the influence of ambient humidity on voltage response, classical Au-Nafion IPMC was chosen as the reference sample. Voltage response under a bending deformation was measured in two ways: first, continuous measurement of voltage response in the process of absorption and desorption of water to study the tendency of voltage variation at all water states; second, measurements at multiple fixed ambient humidity levels to characterize the process of voltage response quantitatively. Ambient humidity influences the voltage response mainly by varying water content in ionic polymer. Under a step bending, the amplitude of initial voltage peak first increases and then decreases as the ambient humidity and the inherent water content decrease. This tendency is explained semiquantitatively by mass storage capacity related to the stretchable state of the Nafion polymer network. Following the initial peak, the voltage shows a slow decay to a steady state, which is first characterized in this paper. The relative voltage decay during the steady state always decreases as the ambient humidity is lowered. It is ascribed to progressive increase of the ratio between the water molecules in the cation hydration shell to the free water. Under sinusoidal mechanical bending excitation in the range of 0.1-10 Hz, the voltage magnitude increases with frequency at high ambient humidity but decreases with frequency at low ambient humidity. The relationship is mainly controlled by the voltage decay effect and the response speed.

  12. The injection spectroscopy method for the study of deep traps in CdTe films

    International Nuclear Information System (INIS)

    Lyubchak, V.O.; Opanasyuk, A.S.; Tirkusova, N.V.; Kharchenko, V.Yi.

    1999-01-01

    A simple highly informative method is presented, which enables to precisely identify the mechanism of charge transfer in the investigated structures and to extract a correct information about the parameters of local states in the energy gap band of the material via space-change-limited current-voltage characteristics. The modelling shows a good coincidence of the parameters, reconstructed with the help of this method, of the distribution of traps with the input parameters of deep traps. Some modification of the differential method are tested on high-ohm med CdTe films. Four groups of monoenergetic deep traps are found. The obtained results evidence the perspectives of the injection spectroscopy method for the research of deep traps in semiconducting and dielectric materials

  13. Designing of a Quadrupole Paul Ion Trap

    Science.gov (United States)

    Kiyani, Abouzar; Abdollahzadeh, M.; Sadat Kiai, S. M.; Zirak, A. R.

    2011-08-01

    The ion motion equation in a Paul ion trap known as Mathieu differential equation has been solved for the first time by using Runge-Kutta methods with 4th, 6th, and 8th orders. The first stability regions in az - qz plane and the corresponding qmax values were determined and compared. Also, the first stability regions of , , , ions in the Vdc - Vac plane were drown, and the threshold voltages for the ion separation was investigated.

  14. A monolithic active pixel sensor for ionizing radiation using a 180 nm HV-SOI process

    Energy Technology Data Exchange (ETDEWEB)

    Hemperek, Tomasz; Kishishita, Tetsuichi; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn, Bonn (Germany)

    2016-07-01

    An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-180 nm High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. Standard FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to trapped charge in the buried oxide layer and charged interface states created at the silicon oxide boundaries (back gate effect). The X-FAB 180 nm HV-SOI technology offers an additional isolation using a deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection. The design and measurement results from first prototypes are presented including radiation tolerance to total ionizing dose and charge collection properties of neutron irradiated samples.

  15. Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices

    Directory of Open Access Journals (Sweden)

    Chandan Sharma

    2017-08-01

    Full Text Available This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT operation. De-trapping of charge carriers is one of the prominent reasons behind the kink effect. The commonly observed non-monotonic behavior of kink pattern is analyzed under two different device operating conditions and it is found that two different de-trapping mechanisms are responsible for a particular kink behavior. These different de-trapping mechanisms are investigated through a time delay analysis which shows the presence of traps with different time constants. Further voltage sweep and temperature analysis corroborates the finding that different de-trapping mechanisms play a role in kink behavior under different device operating conditions.

  16. Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices

    Science.gov (United States)

    Sharma, Chandan; Laishram, Robert; Amit, Rawal, Dipendra Singh; Vinayak, Seema; Singh, Rajendra

    2017-08-01

    This article reports an experimental approach to analyze the kink effect phenomenon which is usually observed during the GaN high electron mobility transistor (HEMT) operation. De-trapping of charge carriers is one of the prominent reasons behind the kink effect. The commonly observed non-monotonic behavior of kink pattern is analyzed under two different device operating conditions and it is found that two different de-trapping mechanisms are responsible for a particular kink behavior. These different de-trapping mechanisms are investigated through a time delay analysis which shows the presence of traps with different time constants. Further voltage sweep and temperature analysis corroborates the finding that different de-trapping mechanisms play a role in kink behavior under different device operating conditions.

  17. A grid-voltage-sensorless resistive active power filter with series LC-filter

    DEFF Research Database (Denmark)

    Bai, Haofeng; Wang, Xiongfei; Blaabjerg, Frede

    2017-01-01

    Voltage-sensorless control has been investigated for Voltage Source Inverters (VSIs) for many years due to the reduced system cost and potentially improved system reliability. The VSI based Resistive Active Power Filters (R-APFs) are now widely used to prevent the harmonic resonance in power...... distribution network, for which the voltage sensors are needed in order to obtain the current reference. In this paper a grid-voltage-sensorless control strategy is proposed for the R-APF with series LC-filter. Unlike the traditional resistance emulation method, this proposed control method re...

  18. A Grid-Voltage-Sensorless Resistive Active Power Filter with Series LC-Filter

    DEFF Research Database (Denmark)

    Bai, Haofeng; Wang, Xiongfei; Blaabjerg, Frede

    2018-01-01

    Voltage-sensorless control has been investigated for Voltage Source Inverters (VSIs) for many years due to the reduced system cost and potentially improved system reliability. The VSI based Resistive Active Power Filters (R-APFs) are now widely used to prevent the harmonic resonance in power...... distribution network, for which the voltage sensors are needed in order to obtain the current reference. In this paper a grid-voltage-sensorless control strategy is proposed for the R-APF with series LC-filter. Unlike the traditional resistance emulation method, this proposed control method re...

  19. Self-calibrated humidity sensor in CMOS without post-processing.

    Science.gov (United States)

    Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

    2012-01-01

    A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

  20. Self-Calibrated Humidity Sensor in CMOS without Post-Processing

    OpenAIRE

    Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

    2011-01-01

    A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

  1. Distinguishing bulk traps and interface states in deep-level transient spectroscopy

    International Nuclear Information System (INIS)

    Coelho, A V P; Adam, M C; Boudinov, H

    2011-01-01

    A new method for the distinction of discrete bulk deep levels and interface states related peaks in deep-level transient spectroscopy spectra is proposed. The measurement of two spectra using different reverse voltages while keeping pulse voltage fixed causes different peak maximum shifts in each case: for a reverse voltage modulus increase, a bulk deep-level related peak maximum will remain unchanged or shift towards lower temperatures while only interface states related peak maximum will be able to shift towards higher temperatures. This method has the advantage of being non-destructive and also works in the case of bulk traps with strong emission rate dependence on the electric field. Silicon MOS capacitors and proton implanted GaAs Schottky diodes were employed to experimentally test the method.

  2. Limited Scope Design Study for Multi-Sensor Towbody

    Science.gov (United States)

    2016-06-01

    ports 2 Leak sensors 1 Electrical Surface supply voltage 300 V nominal (250–425 Vdc) Towbody output voltages 48/24/12 Vdc Load power...shallow water (អ m) at thousands of current and former Department of Defense (DoD) sites encompassing millions of acres. This design study...addresses the munitions remediation in shallow water problem with a system that uses a Multi-Sensor Towbody (MuST) and surface vessel with support

  3. Ion Trapping, Storage, and Ejection in Structures for Lossless Ion Manipulations.

    Science.gov (United States)

    Zhang, Xinyu; Garimella, Sandilya V B; Prost, Spencer A; Webb, Ian K; Chen, Tsung-Chi; Tang, Keqi; Tolmachev, Aleksey V; Norheim, Randolph V; Baker, Erin S; Anderson, Gordon A; Ibrahim, Yehia M; Smith, Richard D

    2015-06-16

    A new Structures for Lossless Ion Manipulations (SLIM) module, having electrode arrays patterned on a pair of parallel printed circuit boards (PCB), was constructed and utilized to investigate capabilities for ion trapping at a pressure of 4 Torr. Positive ions were confined by application of RF voltages to a series of inner rung electrodes with alternating phase on adjacent electrodes, in conjunction with positive DC potentials on surrounding guard electrodes on each PCB. An axial DC field was also introduced by stepwise varying the DC potentials applied to the inner rung electrodes to control the ion transport and accumulation inside the ion trapping region. We show that ions can be trapped and accumulated with up to 100% efficiency, stored for at least 5 h with no significant losses, and then could be rapidly ejected from the SLIM trap. The present results provide a foundation for the development of much more complex SLIM devices that facilitate extended ion manipulations.

  4. An energy signature scheme for steam trap assessment and flow rate estimation using pipe-induced acoustic measurements

    Science.gov (United States)

    Olama, Mohammed M.; Allgood, Glenn O.; Kuruganti, Teja P.; Lake, Joe E.

    2012-06-01

    The US Congress has passed legislation dictating that all government agencies establish a plan and process for improving energy efficiencies at their sites. In response to this legislation, Oak Ridge National Laboratory (ORNL) has recently conducted a pilot study to explore the deployment of a wireless sensor system for a real-time measurement-based energy efficiency optimization framework within the steam distribution system within the ORNL campus. We make assessments on the real-time status of the distribution system by observing the state measurements of acoustic sensors mounted on the steam pipes/traps/valves. In this paper, we describe a spectral-based energy signature scheme that interprets acoustic vibration sensor data to estimate steam flow rates and assess steam traps health status. Experimental results show that the energy signature scheme has the potential to identify different steam trap health status and it has sufficient sensitivity to estimate steam flow rate. Moreover, results indicate a nearly quadratic relationship over the test region between the overall energy signature factor and flow rate in the pipe. The analysis based on estimated steam flow and steam trap status helps generate alerts that enable operators and maintenance personnel to take remedial action. The goal is to achieve significant energy-saving in steam lines by monitoring and acting on leaking steam pipes/traps/valves.

  5. A Capacitive Humidity Sensor Based on Multi-Wall Carbon Nanotubes (MWCNTs

    Directory of Open Access Journals (Sweden)

    Zhen-Gang Zhao

    2009-09-01

    Full Text Available A new type of capacitive humidity sensor is introduced in this paper. The sensor consists of two plate electrodes coated with MWCNT films and four pieces of isolating medium at the four corners of the sensor. According to capillary condensation, the capacitance signal of the sensor is sensitive to relative humidity (RH, which could be transformed to voltage signal by a capacitance to voltage converter circuit. The sensor is tested using different saturated saline solutions at the ambient temperature of 25 °C, which yielded approximately 11% to 97% RH, respectively. The function of the MWCNT films, the effect of electrode distance, the temperature character and the repeatability of the sensor are discussed in this paper.

  6. Analysis of unbalanced sensor in eddy current method of non destructive testing

    International Nuclear Information System (INIS)

    Chegodaev, V.V.

    2001-01-01

    Different types of sensors are used in eddy current method of non-destructive testing. The choosing of sensor type depends on control object. Different types of sensors can have the same schemes of cut-in in device for formation of information signal. The most common scheme of sensor cut-in is presented. The calculation of output voltage when the sensor is on a segment of the control object, which has not defect is made. The conditions of balancing are adduced and it was shown that the balancing of sensor is very difficult. The methods of compensation or account of voltage of an imbalance are indicated. (author)

  7. A Sentinel Sensor Network for Hydrogen Sensing

    Directory of Open Access Journals (Sweden)

    Andrew J. Mason

    2003-02-01

    Full Text Available A wireless sensor network is presented for in-situ monitoring of atmospheric hydrogen concentration. The hydrogen sensor network consists of multiple sensor nodes, equipped with titania nanotube hydrogen sensors, distributed throughout the area of interest; each node is both sensor, and data-relay station that enables extended wide area monitoring without a consequent increase of node power and thus node size. The hydrogen sensor is fabricated from a sheet of highly ordered titania nanotubes, made by anodization of a titanium thick film, to which platinum electrodes are connected. The electrical resistance of the hydrogen sensor varies from 245 Ω at 500 ppm hydrogen, to 10.23 kΩ at 0 ppm hydrogen (pure nitrogen environment. The measured resistance is converted to voltage, 0.049 V at 500 ppm to 2.046 V at 0 ppm, by interface circuitry. The microcontroller of the sensor node digitizes the voltage and transmits the digital information, using intermediate nodes as relays, to a host node that downloads measurement data to a computer for display. This paper describes the design and operation of the sensor network, the titania nanotube hydrogen sensors with an apparent low level resolution of approximately 0.05 ppm, and their integration in one widely useful device.

  8. Toward developing long-life water quality sensors for the ISS using planar REDOX and conductivity sensors

    Science.gov (United States)

    Buehler, M. G.; Kuhlman, G. M.; Keymeulen, D.; Myung, N.; Kounaves, S. P.

    2003-01-01

    REDOX and conductivity sensors are metal electrodes that are used to detect ionic species in solution by measuring the electrochemical cell current as the voltage is scanned. This paper describes the construction of the sensors, the potentiostat electronics, the measurement methodology, and applications to water quality measurements.

  9. Effect of recombination on the open-circuit voltage of a silicon solar cell

    Science.gov (United States)

    Von Roos, O.; Landsberg, P. T.

    1985-01-01

    A theoretical study of the influence of band-band Auger, band-trap Auger, and the ordinary Shockley-Read-Hall mechanism for carrier recombination on the open-circuit voltage VOC of a solar cell is presented. Under reasonable assumptions for the magnitude of rate constants and realistic values for trap densities, surface recombination velocities and band-gap narrowing, the maximum VOC for typical back surface field solar cells is found to lie in the range between 0.61 and 0.72 V independent of base width.

  10. Observation of Diamond Nitrogen-Vacancy Center Photoluminescence under High Vacuum in a Magneto-Gravitational Trap

    Science.gov (United States)

    Ji, Peng; Hsu, Jen-Feng; Lewandowski, Charles W.; Dutt, M. V. Gurudev; D'Urso, Brian

    2016-05-01

    We report the observation of photoluminescence from nitrogen-vacancy (NV) centers in diamond nanocrystals levitated in a magneto-gravitational trap. The trap utilizes a combination of strong magnetic field gradients and gravity to confine diamagnetic particles in three dimensions. The well-characterized NV centers in trapped diamond nanocrystals provide an ideal built-in sensor to measure the trap magnetic field and the temperature of the trapped diamond nanocrystal. In the future, the NV center spin state could be coupled to the mechanical motion through magnetic field gradients, enabling in an ideal quantum interface between NV center spin and the mechanical motion. National Science Foundation, Grant No. 1540879.

  11. Investigation of disorder and its effect on electrical transport in electrochemically doped polymer devices by current-voltage and impedance spectroscopy

    Science.gov (United States)

    Rahman Khan, Motiur; Anjaneyulu, P.; Koteswara Rao, K. S. R.; Menon, R.

    2017-03-01

    We report on the analysis of temperature-dependent current-voltage characteristics and impedance measurements of electrochemically doped poly(3-methylthiophene) devices at different doping levels. The extent of doping is carefully tailored such that only the bulk-limited transport mechanism prevails. A transition from exponentially distributed trap-limited transport to trap-free space-charge-limited current is observed in current-voltage conduction upon increasing the doping. The obtained trap densities (3.2  ×  1016 cm-3 and 8.6  ×  1015 cm-3) and trap energies (31.7 meV and 16.6 meV) for different devices signify the variation in disorder with doping, which is later supported by impedance measurements. Impedance-frequency data for various devices can not be explained using the parallel resistance-capacitance (RC) model in the equivalent circuit. However, this was established by incorporating a constant phase element Q (CPE) instead of the capacitance parameter. It should be emphasized that low doping devices in particular are best simulated with two CPE elements, while the data related to other devices are fitted well with a single CPE element. It is also observed from evaluated circuit parameters that the spatial inhomogeneity and disorder are the cause of variability in different samples, which has an excellent correlation with the temperature-dependent current-voltage characteristics.

  12. Investigation of disorder and its effect on electrical transport in electrochemically doped polymer devices by current–voltage and impedance spectroscopy

    International Nuclear Information System (INIS)

    Khan, Motiur Rahman; Koteswara Rao, K S R; Menon, R; Anjaneyulu, P

    2017-01-01

    We report on the analysis of temperature-dependent current–voltage characteristics and impedance measurements of electrochemically doped poly(3-methylthiophene) devices at different doping levels. The extent of doping is carefully tailored such that only the bulk-limited transport mechanism prevails. A transition from exponentially distributed trap-limited transport to trap-free space-charge-limited current is observed in current–voltage conduction upon increasing the doping. The obtained trap densities (3.2  ×  10 16 cm −3 and 8.6  ×  10 15 cm −3 ) and trap energies (31.7 meV and 16.6 meV) for different devices signify the variation in disorder with doping, which is later supported by impedance measurements. Impedance–frequency data for various devices can not be explained using the parallel resistance–capacitance ( RC ) model in the equivalent circuit. However, this was established by incorporating a constant phase element Q (CPE) instead of the capacitance parameter. It should be emphasized that low doping devices in particular are best simulated with two CPE elements, while the data related to other devices are fitted well with a single CPE element. It is also observed from evaluated circuit parameters that the spatial inhomogeneity and disorder are the cause of variability in different samples, which has an excellent correlation with the temperature-dependent current–voltage characteristics. (paper)

  13. A Novel Passive Wireless Sensor for Concrete Humidity Monitoring

    Directory of Open Access Journals (Sweden)

    Shuangxi Zhou

    2016-09-01

    Full Text Available This paper presents a passive wireless humidity sensor for concrete monitoring. After discussing the transmission of electromagnetic wave in concrete, a novel architecture of wireless humidity sensor, based on Ultra-High Frequency (UHF Radio Frequency Identification (RFID technology, is proposed for low-power application. The humidity sensor utilizes the top metal layer to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. The sensor interface converts the humidity capacitance into a digital signal in the frequency domain. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture. The clock generator employs a novel structure to reduce the internal voltage swing. The measurement results show that our proposed wireless humidity can achieve a high linearity with a normalized sensitivity of 0.55% %RH at 20 °C. Despite the high losses of concrete, the proposed wireless humidity sensor achieves reliable communication performances in passive mode. The maximum operating distance is 0.52 m when the proposed wireless sensor is embedded into the concrete at the depth of 8 cm. The measured results are highly consistent with the results measured by traditional methods.

  14. A Novel Passive Wireless Sensor for Concrete Humidity Monitoring.

    Science.gov (United States)

    Zhou, Shuangxi; Deng, Fangming; Yu, Lehua; Li, Bing; Wu, Xiang; Yin, Baiqiang

    2016-09-20

    This paper presents a passive wireless humidity sensor for concrete monitoring. After discussing the transmission of electromagnetic wave in concrete, a novel architecture of wireless humidity sensor, based on Ultra-High Frequency (UHF) Radio Frequency Identification (RFID) technology, is proposed for low-power application. The humidity sensor utilizes the top metal layer to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. The sensor interface converts the humidity capacitance into a digital signal in the frequency domain. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture. The clock generator employs a novel structure to reduce the internal voltage swing. The measurement results show that our proposed wireless humidity can achieve a high linearity with a normalized sensitivity of 0.55% %RH at 20 °C. Despite the high losses of concrete, the proposed wireless humidity sensor achieves reliable communication performances in passive mode. The maximum operating distance is 0.52 m when the proposed wireless sensor is embedded into the concrete at the depth of 8 cm. The measured results are highly consistent with the results measured by traditional methods.

  15. A Novel Passive Wireless Sensor for Concrete Humidity Monitoring

    Science.gov (United States)

    Zhou, Shuangxi; Deng, Fangming; Yu, Lehua; Li, Bing; Wu, Xiang; Yin, Baiqiang

    2016-01-01

    This paper presents a passive wireless humidity sensor for concrete monitoring. After discussing the transmission of electromagnetic wave in concrete, a novel architecture of wireless humidity sensor, based on Ultra-High Frequency (UHF) Radio Frequency Identification (RFID) technology, is proposed for low-power application. The humidity sensor utilizes the top metal layer to form the interdigitated electrodes, which were then filled with polyimide as the humidity sensing layer. The sensor interface converts the humidity capacitance into a digital signal in the frequency domain. A two-stage rectifier adopts a dynamic bias-voltage generator to boost the effective gate-source voltage of the switches in differential-drive architecture. The clock generator employs a novel structure to reduce the internal voltage swing. The measurement results show that our proposed wireless humidity can achieve a high linearity with a normalized sensitivity of 0.55% %RH at 20 °C. Despite the high losses of concrete, the proposed wireless humidity sensor achieves reliable communication performances in passive mode. The maximum operating distance is 0.52 m when the proposed wireless sensor is embedded into the concrete at the depth of 8 cm. The measured results are highly consistent with the results measured by traditional methods. PMID:27657070

  16. HOPG/ZnO/HOPG pressure sensor

    Science.gov (United States)

    Jahangiri, Mojtaba; Yousefiazari, Ehsan; Ghalamboran, Milad

    2017-12-01

    Pressure sensor is one of the most commonly used sensors in the research laboratories and industries. These are generally categorized in three different classes of absolute pressure sensors, gauge pressure sensors, and differential pressure sensors. In this paper, we fabricate and assess the pressure sensitivity of the current vs. voltage diagrams in a graphite/ZnO/graphite structure. Zinc oxide layers are deposited on highly oriented pyrolytic graphite (HOPG) substrates by sputtering a zinc target under oxygen plasma. The top electrode is also a slice of HOPG which is placed on the ZnO layer and connected to the outside electronic circuits. By recording the I-V characteristics of the device under different forces applied to the top HOPG electrode, the pressure sensitivity is demonstrated; at the optimum biasing voltage, the device current changes 10 times upon changing the pressure level on the top electrode by 20 times. Repeatability and reproducibility of the observed effect is studied on the same and different samples. All the materials used for the fabrication of this pressure sensor are biocompatible, the fabricated device is anticipated to find potential applications in biomedical engineering.

  17. A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics.

    Science.gov (United States)

    Huang, Haiyun; Wang, Dejun; Xu, Yue

    2015-10-27

    This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.

  18. A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics

    Directory of Open Access Journals (Sweden)

    Haiyun Huang

    2015-10-01

    Full Text Available This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.

  19. Research experiments on pressure-difference sensors with ferrofluid

    Energy Technology Data Exchange (ETDEWEB)

    Ruican, Hao, E-mail: haoruican@163.com [School of Mechanical Engineering, Beijing Polytechnic, Beijing 100176 (China); Huagang, Liu; Wen, Gong; Na, Zhang [School of Mechanical Engineering, Beijing Polytechnic, Beijing 100176 (China); Ruixiao, Hao [Civil and Architectural Engineering Institute of CCCC-FHEB Co., Ltd., Beijing 101102 (China)

    2016-10-15

    Ferrofluid has distinctive properties and can be applied in many industrial uses, especially in sensors. The principles of pressure-difference sensors with ferrofluid were illustrated and experiments were demonstrated. Four types of ferrofluids with different concentrations were selected for the experiments performed. Then, the parameters of ferrofluid, such as density and magnetization, were measured. The magnetization curves of the ferrofluid were sketched. Four U tubes with different diameters were designed and built. Experiments were conducted to analyze the impacts of tube diameter and ferrofluid concentration on the output voltage/pressure difference performance. According to the experiment results, the tube diameter has little effect on the sensor output voltage. With the concentration of ferrofluid increasing, the output voltage and sensitivity of the pressure-difference sensor increases. The measurable range of the sensor also increases with the increasing concentration of ferrofluid. The workable range and the sensitivity of the designed sensor were (−2000~+2000)Pa and 1.26 mV/Pa, respectively. - Highlights: • The principle of pressure difference sensor with ferrofluid was illustrated. • The parameters of ferrofluid, such as density and magnetization, were measured. The magnetization curves of the ferrofluid were sketched. • Four series of U tubes with different diameter were designed and manufactured. • The experiments were made to analyze the factors of the tube diameter and the concentration of ferrofluid on the output-input pressure difference. • The sensitivity of the pressure difference sensor with ferrofluid was studied and the corresponding conclusions were obtained.

  20. Research experiments on pressure-difference sensors with ferrofluid

    International Nuclear Information System (INIS)

    Ruican, Hao; Huagang, Liu; Wen, Gong; Na, Zhang; Ruixiao, Hao

    2016-01-01

    Ferrofluid has distinctive properties and can be applied in many industrial uses, especially in sensors. The principles of pressure-difference sensors with ferrofluid were illustrated and experiments were demonstrated. Four types of ferrofluids with different concentrations were selected for the experiments performed. Then, the parameters of ferrofluid, such as density and magnetization, were measured. The magnetization curves of the ferrofluid were sketched. Four U tubes with different diameters were designed and built. Experiments were conducted to analyze the impacts of tube diameter and ferrofluid concentration on the output voltage/pressure difference performance. According to the experiment results, the tube diameter has little effect on the sensor output voltage. With the concentration of ferrofluid increasing, the output voltage and sensitivity of the pressure-difference sensor increases. The measurable range of the sensor also increases with the increasing concentration of ferrofluid. The workable range and the sensitivity of the designed sensor were (−2000~+2000)Pa and 1.26 mV/Pa, respectively. - Highlights: • The principle of pressure difference sensor with ferrofluid was illustrated. • The parameters of ferrofluid, such as density and magnetization, were measured. The magnetization curves of the ferrofluid were sketched. • Four series of U tubes with different diameter were designed and manufactured. • The experiments were made to analyze the factors of the tube diameter and the concentration of ferrofluid on the output-input pressure difference. • The sensitivity of the pressure difference sensor with ferrofluid was studied and the corresponding conclusions were obtained.

  1. High-k shallow traps observed by charge pumping with varying discharging times

    International Nuclear Information System (INIS)

    Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang; Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju; Wang, Bin-Wei; Cao, Xi-Xin; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu

    2013-01-01

    In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO 2 /metal gate stacks. N T -V high level characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N T for extra contribution of I cp traps. N T is the number of traps, and I cp is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I cp traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti x N 1−x metal gate concentrations. Next, N T -V high level characteristic curves with different falling times (t falling time ) and base level times (t base level ) show that extra contribution of I cp traps decrease with an increase in t falling time . By fitting discharge formula for different t falling time , the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t falling time . This current cannot be measured by the charge pumping technique. Subsequent measurements of N T by charge pumping technique at t base level reveal a remainder of electrons trapped in high-k bulk shallow traps

  2. Study of surface properties of ATLAS12 strip sensors and their radiation resistance

    Science.gov (United States)

    Mikestikova, M.; Allport, P. P.; Baca, M.; Broughton, J.; Chisholm, A.; Nikolopoulos, K.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.; Kierstead, J.; Kuczewski, P.; Lynn, D.; Hommels, L. B. A.; Ullan, M.; Bloch, I.; Gregor, I. M.; Tackmann, K.; Hauser, M.; Jakobs, K.; Kuehn, S.; Mahboubi, K.; Mori, R.; Parzefall, U.; Clark, A.; Ferrere, D.; Sevilla, S. Gonzalez; Ashby, J.; Blue, A.; Bates, R.; Buttar, C.; Doherty, F.; McMullen, T.; McEwan, F.; O'Shea, V.; Kamada, S.; Yamamura, K.; Ikegami, Y.; Nakamura, K.; Takubo, Y.; Unno, Y.; Takashima, R.; Chilingarov, A.; Fox, H.; Affolder, A. A.; Casse, G.; Dervan, P.; Forshaw, D.; Greenall, A.; Wonsak, S.; Wormald, M.; Cindro, V.; Kramberger, G.; Mandić, I.; Mikuž, M.; Gorelov, I.; Hoeferkamp, M.; Palni, P.; Seidel, S.; Taylor, A.; Toms, K.; Wang, R.; Hessey, N. P.; Valencic, N.; Hanagaki, K.; Dolezal, Z.; Kodys, P.; Bohm, J.; Stastny, J.; Bevan, A.; Beck, G.; Milke, C.; Domingo, M.; Fadeyev, V.; Galloway, Z.; Hibbard-Lubow, D.; Liang, Z.; Sadrozinski, H. F.-W.; Seiden, A.; To, K.; French, R.; Hodgson, P.; Marin-Reyes, H.; Parker, K.; Jinnouchi, O.; Hara, K.; Sato, K.; Hagihara, M.; Iwabuchi, S.; Bernabeu, J.; Civera, J. V.; Garcia, C.; Lacasta, C.; Marti i Garcia, S.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U.

    2016-09-01

    A radiation hard n+-in-p micro-strip sensor for the use in the Upgrade of the strip tracker of the ATLAS experiment at the High Luminosity Large Hadron Collider (HL-LHC) has been developed by the "ATLAS ITk Strip Sensor collaboration" and produced by Hamamatsu Photonics. Surface properties of different types of end-cap and barrel miniature sensors of the latest sensor design ATLAS12 have been studied before and after irradiation. The tested barrel sensors vary in "punch-through protection" (PTP) structure, and the end-cap sensors, whose stereo-strips differ in fan geometry, in strip pitch and in edge strip ganging options. Sensors have been irradiated with proton fluences of up to 1×1016 neq/cm2, by reactor neutron fluence of 1×1015 neq/cm2 and by gamma rays from 60Co up to dose of 1 MGy. The main goal of the present study is to characterize the leakage current for micro-discharge breakdown voltage estimation, the inter-strip resistance and capacitance, the bias resistance and the effectiveness of PTP structures as a function of bias voltage and fluence. It has been verified that the ATLAS12 sensors have high breakdown voltage well above the operational voltage which implies that different geometries of sensors do not influence their stability. The inter-strip isolation is a strong function of irradiation fluence, however the sensor performance is acceptable in the expected range for HL-LHC. New gated PTP structure exhibits low PTP onset voltage and sharp cut-off of effective resistance even at the highest tested radiation fluence. The inter-strip capacitance complies with the technical specification required before irradiation and no radiation-induced degradation was observed. A summary of ATLAS12 sensors tests is presented including a comparison of results from different irradiation sites. The measured characteristics are compared with the previous prototype of the sensor design, ATLAS07.

  3. A microfluidic device integrating plasmonic nanodevices for Raman spectroscopy analysis on trapped single living cells

    KAUST Repository

    Perozziello, Gerardo; Catalano, Rossella; Francardi, Marco; Rondanina, Eliana; Pardeo, Francesca; De Angelis, Francesco De; Malara, Natalia Maria; Candeloro, Patrizio; Morrone, Giovanni; Di Fabrizio, Enzo M.

    2013-01-01

    In this work we developed a microfluidic device integrating nanoplasmonic devices combined with fluidic trapping regions. The microfuidic traps allow to capture single cells in areas where plasmonic sensors are placed. In this way it is possible to perform Enhanced Raman analysis on the cell membranes. Moreover, by changing direction of the flux it is possible to change the orientation of the cell in the trap, so that it is possible to analyze different points of the membrane of the same cell. We shows an innovative procedure to fabricate and assembly the microfluidic device which combine photolithography, focused ion beam machining, and hybrid bonding between a polymer substrate and lid of Calcium fluoride. This procedure is compatible with the fabrication of the plasmonic sensors in close proximity of the microfluidic traps. Moreover, the use of Calcium fluoride as lid allows full compatibility with Raman measurements producing negligible Raman background signal and avoids Raman artifacts. Finally, we performed Raman analysis on cells to monitor their oxidative stress under particular non physiological conditions. © 2013 Elsevier B.V. All rights reserved.

  4. A microfluidic device integrating plasmonic nanodevices for Raman spectroscopy analysis on trapped single living cells

    KAUST Repository

    Perozziello, Gerardo

    2013-11-01

    In this work we developed a microfluidic device integrating nanoplasmonic devices combined with fluidic trapping regions. The microfuidic traps allow to capture single cells in areas where plasmonic sensors are placed. In this way it is possible to perform Enhanced Raman analysis on the cell membranes. Moreover, by changing direction of the flux it is possible to change the orientation of the cell in the trap, so that it is possible to analyze different points of the membrane of the same cell. We shows an innovative procedure to fabricate and assembly the microfluidic device which combine photolithography, focused ion beam machining, and hybrid bonding between a polymer substrate and lid of Calcium fluoride. This procedure is compatible with the fabrication of the plasmonic sensors in close proximity of the microfluidic traps. Moreover, the use of Calcium fluoride as lid allows full compatibility with Raman measurements producing negligible Raman background signal and avoids Raman artifacts. Finally, we performed Raman analysis on cells to monitor their oxidative stress under particular non physiological conditions. © 2013 Elsevier B.V. All rights reserved.

  5. Self-powered optical sensor systems

    NARCIS (Netherlands)

    Wu, H.; Emadi, A.; Graaf, G. de; Leijtens, J.A.P.; Wolffenbuttel, R.F.

    2009-01-01

    A 0.35 μm CMOS process has been used for on-chip integration of a sun sensor composed of a 2x2 photodiode array and a current-to-voltage amplifier. Unlike conventional sun sensors, a shade profile proportional to the angle of incidence of incoming light is projected onto the photodiodes. This

  6. Bias dependent charge trapping in MOSFETs during 1 and 6 MeV electron irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.S. [Department of Chemical Engineering, Mie University, 5148507 (Japan); Kulkarni, V.R.; Mathakari, N.L.; Bhoraskar, V.N. [Department of Physics, Univeristy of Pune, Pune 411007 (India); Dhole, S.D. [Department of Physics, Univeristy of Pune, Pune 411007 (India)], E-mail: sanjay@physics.unipune.ernet.in

    2008-06-15

    To study irradiation-induced charge trapping in SiO{sub 2} and around the SiO{sub 2}-Si interface, depletion n-MOSFETs (metal-oxide-semiconductor field effect transistor) were used. The devices were gate biased during 1 and 6 MeV pulsed electron irradiation. The I{sub D}-V{sub DS} (drain current versus drain voltage) and I{sub D}-V{sub GS} (drain current versus gate voltage) characteristics were measured before and after irradiation. The shift in threshold voltage {delta}V{sub T} (difference in threshold voltage V{sub T} before and after irradiation) exhibited trends depending on the applied gate bias during 1 MeV electron irradiation. This behavior can be associated to the contribution of irradiation-induced negative charge {delta}N{sub IT} buildup around the SiO{sub 2}-Si interface to {delta}V{sub T}, which is sensitive to the electron tunneling from the substrates. However, only weak gate bias dependence was observed in 6 MeV electron irradiated devices. Independent of the energy loss and applied bias, the positive oxide trapped charge {delta}N{sub OT} is marginal and can be associated to thin and good quality of SiO{sub 2}. These results are explained using screening of free and acceptor states by the applied bias during irradiation, thereby reducing the total irradiation-induced charges.

  7. High Tc superconducting magnetic multivibrators for fluxgate magnetic-field sensors

    International Nuclear Information System (INIS)

    Mohri, K.; Uchiyama, T.; Ozeki, A.

    1989-01-01

    Sensitive and quick-response nonlinear inductance characteristics are found for high Tc superconducting (YBa 2 Cu 3 O 7-chi ) disk cores at 77K in which soft magnetic BH hysteresis loops are observed. Various quick response magnetic devices such as modulators, amplifiers and sensors are built using these cores. The magnetizing frequency can be set to more than 20 MHz, which is difficult for conventional ferromagnetic bulk materials such as Permalloy amorphous alloys and ferrite. New quick-response fluxgate type magnetic-field sensors are made using ac and dc voltage sources. The former is used for second-harmonic type sensors, while the latter is for voltage-output multivibrator type sensors. Stable and quick-response sensor characteristics were obtained for two-core type multivibrators

  8. A high sensitivity process variation sensor utilizing sub-threshold operation

    OpenAIRE

    Meterelliyoz, Mesut; Song, Peilin; Stellari, Franco; Kulkarni, Jaydeep P.; Roy, Kaushik

    2008-01-01

    In this paper, we propose a novel low-power, bias-free, high-sensitivity process variation sensor for monitoring random variations in the threshold voltage. The proposed sensor design utilizes the exponential current-voltage relationship of sub-threshold operation thereby improving the sensitivity by 2.3X compared to the above-threshold operation. A test-chip containing 128 PMOS and 128 NMOS devices has been fabri...

  9. Compensation and trapping in CdZnTe radiation detectors studied by thermoelectric emission spectroscopy, thermally stimulated conductivity, and current-voltage measurements

    International Nuclear Information System (INIS)

    James, Ralph B.

    2000-01-01

    In today's commercially available counter-select-grade CdZnTe crystals for radiation detector applications, the thermal ionization energies of the traps and their types, whether electron or hole traps, were measured. The measurements were successfully done using thermoelectric emission spectroscopy (TEES) and thermally stimulated conductivity (TSC). For reliability, the electrical contacts to the sample were found to be very important and, instead of Au Schottky contacts, In Ohmic contacts had to be used. For the filling of the traps, photoexcitation was done at zero bias, at 20K and at wavelengths which gave the maximum bulk photoexcitation for the sample. Between the temperature range from 20 to 400 K, the TSC current was found to be on the order of ∼ 10,000 times or even larger than the TEES current, in agreement with theory, but only TEES could resolve the trap type and was sensitive to the deep traps. Large concentration of hole traps at 0.1 and 0.6 eV were observed and smaller contraction of electron traps at 0.4 eV was seen. These deep traps cause compensation in the material and also cause trapping that degrades the radiation detection measurement

  10. A Multi-Modality CMOS Sensor Array for Cell-Based Assay and Drug Screening.

    Science.gov (United States)

    Chi, Taiyun; Park, Jong Seok; Butts, Jessica C; Hookway, Tracy A; Su, Amy; Zhu, Chengjie; Styczynski, Mark P; McDevitt, Todd C; Wang, Hua

    2015-12-01

    In this paper, we present a fully integrated multi-modality CMOS cellular sensor array with four sensing modalities to characterize different cell physiological responses, including extracellular voltage recording, cellular impedance mapping, optical detection with shadow imaging and bioluminescence sensing, and thermal monitoring. The sensor array consists of nine parallel pixel groups and nine corresponding signal conditioning blocks. Each pixel group comprises one temperature sensor and 16 tri-modality sensor pixels, while each tri-modality sensor pixel can be independently configured for extracellular voltage recording, cellular impedance measurement (voltage excitation/current sensing), and optical detection. This sensor array supports multi-modality cellular sensing at the pixel level, which enables holistic cell characterization and joint-modality physiological monitoring on the same cellular sample with a pixel resolution of 80 μm × 100 μm. Comprehensive biological experiments with different living cell samples demonstrate the functionality and benefit of the proposed multi-modality sensing in cell-based assay and drug screening.

  11. Electrocatalytic cermet sensor

    Science.gov (United States)

    Shoemaker, Erika L.; Vogt, Michael C.

    1998-01-01

    A sensor for O.sub.2 and CO.sub.2 gases. The gas sensor includes a plurality of layers driven by a cyclic voltage to generate a unique plot characteristic of the gas in contact with the sensor. The plurality of layers includes an alumina substrate, a reference electrode source of anions, a lower electrical reference electrode of Pt coupled to the reference source of anions, a solid electrolyte containing tungsten and coupled to the lower reference electrode, a buffer layer for preventing flow of Pt ions into the solid electrolyte and an upper catalytically active Pt electrode coupled to the buffer layer.

  12. A micro-fabricated force sensor using an all thin film piezoelectric active sensor.

    Science.gov (United States)

    Lee, Junwoo; Choi, Wook; Yoo, Yong Kyoung; Hwang, Kyo Seon; Lee, Sang-Myung; Kang, Sungchul; Kim, Jinseok; Lee, Jeong Hoon

    2014-11-25

    The ability to measure pressure and force is essential in biomedical applications such as minimally invasive surgery (MIS) and palpation for detecting cancer cysts. Here, we report a force sensor for measuring a shear and normal force by combining an arrayed piezoelectric sensors layer with a precut glass top plate connected by four stress concentrating legs. We designed and fabricated a thin film piezoelectric force sensor and proposed an enhanced sensing tool to be used for analyzing gentle touches without the external voltage source used in FET sensors. Both the linear sensor response from 3 kPa to 30 kPa and the exact signal responses from the moving direction illustrate the strong feasibility of the described thin film miniaturized piezoelectric force sensor.

  13. A Micro-Fabricated Force Sensor Using an All Thin Film Piezoelectric Active Sensor

    Directory of Open Access Journals (Sweden)

    Junwoo Lee

    2014-11-01

    Full Text Available The ability to measure pressure and force is essential in biomedical applications such as minimally invasive surgery (MIS and palpation for detecting cancer cysts. Here, we report a force sensor for measuring a shear and normal force by combining an arrayed piezoelectric sensors layer with a precut glass top plate connected by four stress concentrating legs. We designed and fabricated a thin film piezoelectric force sensor and proposed an enhanced sensing tool to be used for analyzing gentle touches without the external voltage source used in FET sensors. Both the linear sensor response from 3 kPa to 30 kPa and the exact signal responses from the moving direction illustrate the strong feasibility of the described thin film miniaturized piezoelectric force sensor.

  14. Analysis of the Effect of Channel Leakage on Design, Characterization and Modelling of a High Voltage Pseudo-Floating Gate Sensor-Front-End

    Directory of Open Access Journals (Sweden)

    Luca Marchetti

    2017-10-01

    Full Text Available In this paper, we analyze the effects of channel leakage on the design, modelling and characterization of a high voltage pseudo-floating gate amplifier (PFGA used as sensor front-end. Leakages are known as a major challenge in new modern CMOS technologies, which are used to bias the PFGA, and consequently affect the behavior of the amplifier. As high voltages are desired for actuation of many types of resonating sensors, especially in ultrasound applications, PFGA implemented in high voltage and low leakage technologies, such as older CMOS fabrication processes or power MOSFET can be the only option. The challenge with these technologies used to implement the PFGA is that the leakages are very low, which affect the biasing of the floating gate. However, the numerous advantages of this type of amplifier, implemented with modern fabrication processes, such as high flexibility, compactness, low power consumption , etc. encouraged the authors to research about this topic. This work provides analysis of the working principle and the design rules for this amplifier, emphasizing the major differences between PFGA implemented in low leakage and high leakage technologies. Static and dynamic analysis, input offset and non-linearity of the PFGA are the main topics of this article. Three different design approaches are presented in this paper, in order to provide a more general design procedure and offset compensation for any low leakage PFGA. The amplifier has been simulated in AMS- 0 . 35 μ m CMOS models for supply voltages of 5 V and 10 V. Two prototypes have been realized to verify the validity of the modelling and the simulation results. Both devices have been realized by using discrete components and mounted on a printed circuit board. In this work, MOSFETs are realized by using commercial IC CD4007UB and 2N7000. Measurement results of the first prototype proved that the implementation of a low leakage PFGA is possible after that the input offset of

  15. The open-circuit voltage in microcrystalline silicon solar cells of different degrees of crystallinity

    International Nuclear Information System (INIS)

    Nath, Madhumita; Roca i Cabarrocas, P.; Johnson, E.V.; Abramov, A.; Chatterjee, P.

    2008-01-01

    We have used a detailed electrical-optical computer model (ASDMP) in conjunction with the experimental characterization of microcrystalline silicon thin-film solar cells of different degrees of crystallinity (but having identical P- and N-layers) to understand the observed decrease of the open-circuit voltage with increasing crystalline fraction. In order to model all aspects of the experimental current density-voltage and quantum efficiency characteristics of cells having low (∼ 75%) and high (over 90%) crystalline fraction, we had to assume both a higher mobility gap defect density and a lower band gap for the more crystallized material. The former fact is widely known to bring down the open-circuit voltage. Our calculations also reveal that the proximity of the quasi-Fermi levels to the energy bands in the cell based on highly crystallized (and assumed to have a lower band gap) microcrystalline silicon results in higher free and trapped carrier densities in this device. The trapped hole population is particularly high at and close to the P/I interface on account of the higher inherent defect density in this region and the fact that the hole quasi-Fermi level is close to the valence band edge here. This fact results in a strong interface field, a collapse of the field in the volume, and hence a lower open-circuit voltage. Thus a combination of higher mobility gap defects and a lower band gap is probably the reason for the lower open-circuit voltage in cells based on highly crystallized microcrystalline silicon

  16. Identification of deep trap energies and influences of oxygen plasma ashing on semiconductor carrier lifetime

    International Nuclear Information System (INIS)

    Koprowski, A; Humbel, O; Plappert, M; Krenn, H

    2015-01-01

    We have performed an analytical study of the effects of oxygen plasma ashing processes in semiconductor device fabrication and its impact on minority carrier lifetime in high voltage semiconductor devices. Our work includes a critical background study of life time killing mechanisms by deep traps imparted into the semiconductor by barrel plasma ashing. The Elymat technique provides the opportunity to measure lifetime and diffusion length of minority carriers and surface photo voltage (SPV) measurement was used to analyse influences of process parameters such as photoresist, time budget and positioning in the process chamber. It was shown that in microwave plasma processes the diffusion length changes severely with tempering at 200 °C, whereas RF-plasma processes show a significant process time-dependence. Batch tools in general suffer from a strong first wafer effect which could be correlated with the static electrical parameters of the semiconductor devices. The trap identities were detected by using deep level transient spectroscopy and the chemical species of the traps has been proven by inductive coupled plasma mass spectrometry. The deep-bandgap trap energies are reliable fingerprints of the chosen process parameters such as process time and of resist-influences. By microwave plasma processes intrinsic Fe and FeB-complex levels were identified and a good agreement with the SPV-measurement and electrical device characteristic was shown. RF-plasma processes impart levels attributed to Pt levels and an additional level, which could be identified as a trap level probably forming a complex of Pt and H. (paper)

  17. Performance improvement of charge-trap memory by using a stacked Zr{sub 0.46}Si{sub 0.54}O{sub 2}/Al{sub 2}O{sub 3} charge-trapping layer

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Zhenjie; Hu, Dan; Zhang, Xiwei; Zhao, Yage [College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000 (China); Li, Rong [School of Mathematics and Statistics, Anyang Normal University, Anyang 455000 (China)

    2016-11-15

    The postdeposition annealing (PDA)-treated charge-trap flash memory capacitor with stacked Zr{sub 0.46}Si{sub 0.54}O{sub 2}/Al{sub 2}O{sub 3} charge-trapping layer flanked by a SiO{sub 2} tunneling oxide and an Al{sub 2}O{sub 3} blocking oxide was fabricated and investigated. It is observed that the memory capacitor exhibits prominent memory characteristics with large memory windows 12.8 V in a ±10 V gate sweeping voltage range, faster program/erase speed, and good data-retention characteristics even at 125 C compared to a single charge-trapping layer (Zr{sub 0.46}Si{sub 0.54}O{sub 2}, Zr{sub 0.79}Si{sub 0.21}O{sub 2}, and Zr{sub 0.46}Al{sub 1.08}O{sub 2.54}). The quantum wells and introduced interfacial traps of the stacked trapping layer regulate the storage and loss behavior of charges, and jointly contribute to the improved memory characteristics. Hence, the memory capacitor with a stacked trapping layer is a promising candidate in future nonvolatile charge-trap memory device design and application. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. CMOS Integrated Carbon Nanotube Sensor

    International Nuclear Information System (INIS)

    Perez, M. S.; Lerner, B.; Boselli, A.; Lamagna, A.; Obregon, P. D. Pareja; Julian, P. M.; Mandolesi, P. S.; Buffa, F. A.

    2009-01-01

    Recently carbon nanotubes (CNTs) have been gaining their importance as sensors for gases, temperature and chemicals. Advances in fabrication processes simplify the formation of CNT sensor on silicon substrate. We have integrated single wall carbon nanotubes (SWCNTs) with complementary metal oxide semiconductor process (CMOS) to produce a chip sensor system. The sensor prototype was designed and fabricated using a 0.30 um CMOS process. The main advantage is that the device has a voltage amplifier so the electrical measure can be taken and amplified inside the sensor. When the conductance of the SWCNTs varies in response to media changes, this is observed as a variation in the output tension accordingly.

  19. Using micro-patterned sensors and cell self-assembly for measuring the oxygen consumption rate of single cells

    International Nuclear Information System (INIS)

    Etzkorn, James R; Parviz, Babak A; Wu, Wen-Chung; Tian, Zhiyuan; Kim, Prince; Jang, Sei-Hum; Jen, Alex K-Y; Meldrum, Deirdre R

    2010-01-01

    We present a method for self-assembling arrays of live single cells on a glass chip using a photopatternable polymer to form micro-traps. We have studied the single-cell self-assembly method and optimized the process to obtain a 52% yield of single-trapped cells. We also report a method to measure the oxygen consumption rate of a single cell using micro-patterned sensors. These molecular oxygen sensors were fabricated around each micro-trap allowing optical interrogation of oxygen concentration in the immediate environment of the trapped cell. Micromachined micro-wells were then used to seal the trap, sensor and cell in order to determine the oxygen consumption rate of single cells. These techniques reported here add to the collection of tools for performing 'singe-cell' biology. An oxygen consumption rate of 1.05 ± 0.28 fmol min −1 was found for a data set consisting of 25 single A549 cells.

  20. Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method

    Science.gov (United States)

    Liu, Yu-Heng; Jiang, Cheng-Min; Lin, Hsiao-Yi; Wang, Tahui; Tsai, Wen-Jer; Lu, Tao-Cheng; Chen, Kuang-Chao; Lu, Chih-Yuan

    2017-07-01

    We use a random telegraph signal method to investigate nitride trapped hole lateral transport in a charge trap flash memory. The concept of this method is to utilize an interface oxide trap and its associated random telegraph signal as an internal probe to detect a local channel potential change resulting from nitride charge lateral movement. We apply different voltages to the drain of a memory cell and vary a bake temperature in retention to study the electric field and temperature dependence of hole lateral movement in a nitride. Thermal energy absorption by trapped holes in lateral transport is characterized. Mechanisms of hole lateral transport in retention are investigated. From the measured and modeled results, we find that thermally assisted trap-to-band tunneling is a major trapped hole emission mechanism in nitride hole lateral transport.

  1. A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit

    Directory of Open Access Journals (Sweden)

    Zong Yao

    2016-06-01

    Full Text Available This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of −50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts, the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor’s output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments.

  2. Charge losses in silicon sensors and electric-field studies at the Si-SiO2 interface

    International Nuclear Information System (INIS)

    Poehlsen, Thomas

    2013-07-01

    accumulation layer and when the accumulation layer returns to steady state is investigated. Irradiated silicon pad sensors are used to study the charge-collection efficiency (CCE) of charge carriers generated using laser light of 1063 nm wavelength, as a function of bulk material, active sensor thickness, voltage, temperature, particle type (for the irradiation) and fluence. As a cross check the CCE is also determined for charge carriers generated by electrons from a 90 Sr-source. A precision of 3 % in the CCE is achieved. Sensors of n-doped and p-doped silicon are compared, as well as sensors of different crystal-growing methods (magnetic Czochralski (MCz) and float zone (FZ)). The sensor thickness varies from 200 μm (MCz and FZ) to 320 μm (FZ). The 320 μm thick FZ sensors underwent a dopant-diffusion process (dd-FZ) to reduce the active sensor thickness. For the irradiation both protons of different energies (23 MeV and 23 GeV) and reactor neutrons (∝1 MeV) are used. The achieved fluences are between 3.10 14 cm -2 and 1.3.10 16 cm -2 1 MeV-neutron equivalent. The CCE is used to calculate the signal corresponding to a minimum-ionising particle (mip) traversing the sensor and to calculate the effective distance the generated charge carriers drift. While little difference in CCE between the 200 m thick MCz and FZ materials is found, the dd-FZ materials of both ∝200 μm and ∝300 μm active thickness have a lower CCE, corresponding also to a shorter effective drift distance. The CCE and the effective drift distance are also calculated for eh pairs generated close to the sensor surface using laser light of 660 nm wavelength. The measurements are not compatible with a position-independent trapping probability, and qualitative agreement with a position-dependent occupation of radiation-induced trapping centres due to the dark current is found.

  3. Electron trapping in neutron-irradiated very thin films of Al2O3

    International Nuclear Information System (INIS)

    Srivastava, P.C.; Bardhan, A.R.

    1979-01-01

    Oxide layers of thicknesses less than 100 A have been prepared by thermal-oxidation of a base metal electrode film of aluminium. These films were then neutron-irradiated from a laboratory Ra-Be source to a fluence of approximately 10 11 neutrons cm -2 and the sandwich structure, Al-Al 2 O 3 -Au, was completed by depositing a thin metal film of gold over the irradiated oxide layer. D.C. steady and transient flow through the sandwich structures have been studied. Results obtained in the experiments with irradiated sandwiches have been compared with unirradiated ones to show that traps are introduced because of the damage caused by the incident neutrons. Transient voltage measurement across the junction gives a trap density of approximately 10 18 cm -3 . A capture cross-section of the order 10 -28 cm 2 is estimated for the traps. It is found that the (identified) traps are uniformly distributed within an energy of 0.099 eV below the conduction band edge of aluminium oxide. The physical nature of the traps is discussed by comparing the capture cross-sections of the physically known trapping centres. The possibility of vacancies or F-centres acting as traps (for the identified ones) has been suggested. (author)

  4. Research on photoconductor radiological sensors

    International Nuclear Information System (INIS)

    Beaumont, Francois

    1989-01-01

    Because of the evolution of medical imaging techniques to digital systems, it is necessary to replace radiological film which has many drawbacks, by a detector quite as efficient and quickly giving a digitable signal. The purpose of this thesis is to find new X-ray digital imaging processes using photoconductor materials such as amorphous selenium. After reviewing the principle of direct radiology and functions to be served by the X-ray sensor (i e. detection, memory, assignment, visualization), we explain specification. We especially show the constraints due to the object to be radio-graphed (condition of minimal exposure), and to the reading signal (electronic noise detection associated with a reading frequency). As a result of this study, a first photoconductor sensor could be designed. Its principle is based on photo carrier trapping at dielectric-photoconductor structure interface. The reading system needs the scanning of a laser beam upon the sensor surface. The dielectric-photoconductor structure enabled us to estimate the possibilities offered by the sensor and to build a complete x-ray imaging system. The originality of thermos-dielectric sensor, that was next studied, is to allow a thermal assignment reading. The chosen system consists in varying the ferroelectric polymer capacity whose dielectric permittivity is weak at room temperature. The thermo-dielectric material was studied by thermal or Joule effect stimulation. During our experiments, trapping was found in a sensor made of amorphous selenium between two electrodes. This new effect was performed and enabled us to expose a first interpretation. Eventually, the comparison of these new sensor concepts with radiological film shows the advantage of the proposed solution. (author) [fr

  5. A comprehensive analysis and hardware implementation of control strategies for high output voltage DC-DC boost power converter

    OpenAIRE

    Padmanaban, Sanjeevikumar; Grandi, Gabriele; Blaabjerg, Frede; Wheeler, Patrick; Siano, Pierluigi; Hammami, Manel

    2017-01-01

    Classical DC-DC converters used in high voltage direct current (HVDC) power transmission systems, lack in terms of efficiency, reduced transfer gain and increased cost with sensor (voltage/current) numbers. Besides, the internal self-parasitic behavior of the power components reduces the output voltage and efficiency of classical HV converters. This paper deals with extra high-voltage (EHV) dc-dc boost converter by the application of voltage-lift technique to overcome the aforementioned defic...

  6. Experimental apparatus to test air trap valves

    Science.gov (United States)

    Lemos De Lucca, Y. de F.; de Aquino, G. A.; Filho, J. G. D.

    2010-08-01

    It is known that the presence of trapped air within water distribution pipes can lead to irregular operation or even damage to the distribution systems and their components. The presence of trapped air may occur while the pipes are being filled with water, or while the pumping systems are in operation. The formation of large air pockets can produce the water hammer phenomenon, the instability and the loss of pressure in the water distribution networks. As a result, it can overload the pumps, increase the consumption of electricity, and damage the pumping system. In order to avoid its formation, all of the trapped air should be removed through "air trap valves". In Brazil, manufacturers frequently have unreliable sizing charts, which cause malfunctioning of the "air trap valves". The result of these malfunctions causes accidents of substantial damage. The construction of a test facility will provide a foundation of technical information that will be used to help make decisions when designing a system of pipelines where "air trap valves" are used. To achieve this, all of the valve characteristics (geometric, mechanic, hydraulic and dynamic) should be determined. This paper aims to describe and analyze the experimental apparatus and test procedure to be used to test "air trap valves". The experimental apparatus and test facility will be located at the University of Campinas, Brazil at the College of Civil Engineering, Architecture, and Urbanism in the Hydraulics and Fluid Mechanics laboratory. The experimental apparatus will be comprised of various components (pumps, steel pipes, butterfly valves to control the discharge, flow meter and reservoirs) and instrumentation (pressure transducers, anemometer and proximity sensor). It should be emphasized that all theoretical and experimental procedures should be defined while taking into consideration flow parameters and fluid properties that influence the tests.

  7. Experimental apparatus to test air trap valves

    Energy Technology Data Exchange (ETDEWEB)

    Lemos De Lucca, Y de F [CTH-DAEE-USP/FAAP/UNICAMP (Brazil); Aquino, G A de [SABESP/UNICAMP (Brazil); Filho, J G D, E-mail: yvone.lucca@gmail.co [Water Resources Department, University of Campinas-UNICAMP, Av. Albert Einstein, 951, Cidade Universitaria-Barao Geraldo-Campinas, S.P., 13083-852 (Brazil)

    2010-08-15

    It is known that the presence of trapped air within water distribution pipes can lead to irregular operation or even damage to the distribution systems and their components. The presence of trapped air may occur while the pipes are being filled with water, or while the pumping systems are in operation. The formation of large air pockets can produce the water hammer phenomenon, the instability and the loss of pressure in the water distribution networks. As a result, it can overload the pumps, increase the consumption of electricity, and damage the pumping system. In order to avoid its formation, all of the trapped air should be removed through 'air trap valves'. In Brazil, manufacturers frequently have unreliable sizing charts, which cause malfunctioning of the 'air trap valves'. The result of these malfunctions causes accidents of substantial damage. The construction of a test facility will provide a foundation of technical information that will be used to help make decisions when designing a system of pipelines where 'air trap valves' are used. To achieve this, all of the valve characteristics (geometric, mechanic, hydraulic and dynamic) should be determined. This paper aims to describe and analyze the experimental apparatus and test procedure to be used to test 'air trap valves'. The experimental apparatus and test facility will be located at the University of Campinas, Brazil at the College of Civil Engineering, Architecture, and Urbanism in the Hydraulics and Fluid Mechanics laboratory. The experimental apparatus will be comprised of various components (pumps, steel pipes, butterfly valves to control the discharge, flow meter and reservoirs) and instrumentation (pressure transducers, anemometer and proximity sensor). It should be emphasized that all theoretical and experimental procedures should be defined while taking into consideration flow parameters and fluid properties that influence the tests.

  8. Low-resistance strip sensors for beam-loss event protection

    International Nuclear Information System (INIS)

    Ullán, M.; Benítez, V.; Quirion, D.; Zabala, M.; Pellegrini, G.; Lozano, M.; Lacasta, C.; Soldevila, U.; García, C.; Fadeyev, V.; Wortman, J.; DeFilippis, J.; Shumko, M.; Grillo, A.A; Sadrozinski, H.F.-W.

    2014-01-01

    AC-coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punch-through structure leading to large voltages. We present here our developments to fabricate low-resistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology

  9. Preliminary Tests of a Paul ion Trap as an Ion Source

    Science.gov (United States)

    Sadat Kiai, S. M.; Zirak, A. R.; Elahi, M.; Adlparvar, S.; Mortazavi, B. N.; Safarien, A.; Farhangi, S.; Sheibani, S.; Alhooie, S.; Khalaj, M. M. A.; Dabirzadeh, A. A.; Ruzbehani, M.; Zahedi, F.

    2010-10-01

    The paper reports on the design and construction of a Paul ion trap as an ion source by using an impact electron ionization technique. Ions are produced in the trap and confined for the specific time which is then extracted and detected by a Faraday cup. Especial electronic configurations are employed between the end caps, ring electrodes, electron gun and a negative voltage for the detector. This configuration allows a constant low level of pure ion source between the pulsed confined ion sources. The present experimental results are based on the production and confinement of Argon ions with good stability and repeatability, but in principle, the technique can be used for various Argon like ions.

  10. The effect of nanoparticle surfactant polarization on trapping depth of vegetable insulating oil-based nanofluids

    Energy Technology Data Exchange (ETDEWEB)

    Li, Jian, E-mail: lijian@cqu.edu.cn; Du, Bin; Wang, Feipeng; Yao, Wei; Yao, Shuhan

    2016-02-05

    Nanoparticles can generate charge carrier trapping and reduce the velocity of streamer development in insulating oils ultimately leading to an enhancement of the breakdown voltage of insulating oils. Vegetable insulating oil-based nanofluids with three sizes of monodispersed Fe{sub 3}O{sub 4} nanoparticles were prepared and their trapping depths were measured by thermally stimulated method (TSC). It is found that the nanoparticle surfactant polarization can significantly influence the trapping depth of vegetable insulating oil-based nanofluids. A nanoparticle polarization model considering surfactant polarization was proposed to calculate the trapping depth of the nanofluids at different nanoparticle sizes and surfactant thicknesses. The results show the calculated values of the model are in a fairly good agreement with the experimental values. - Highlights: • Three different sized Fe{sub 3}O{sub 4} vegetable-oil based nanofluids was successfully prepared. • The trapping depth of the Fe{sub 3}O{sub 4} nanofluids was investigated. • A new model considering surfactant polarization was proposed to calculate the trapping depth of the nanofluids.

  11. Operating modes of electrochemical H-concentration probes for tritium sensors

    International Nuclear Information System (INIS)

    Juhera, E.; Colominas, S.; Abellà, J.

    2015-01-01

    Highlights: • Synthesis and chemical characterization of Sr(Ce_0_._9–Zr_0_._1)_0_._9_5Yb_0_._0_5O_3_−_α proton conductor ceramic. • Evaluation of the sensor performance at different hydrogen concentrations. • Two different operating modes of the sensors: amperometric and potentiometric. • In amperometric mode sensor sensitivity can be tuned by changing the applied voltage. - Abstract: Potentiometric hydrogen sensors using different solid-state electrolytes have been designed and tested at the Electrochemical Methods Lab at Institut Quimic de Sarria (IQS). The most promising element (Sr(Ce_0_._9–Zr_0_._1)_0_._9_5Yb_0_._0_5O_3_−_α) has been selected for this work in order to evaluate the sensor performance at different hydrogen concentrations in two different operating modes: amperometric and potentiometric. In addition, the sensor response has been evaluated at different working temperatures (500, 575 and 650 °C). The experiments performed proved that when the sensor was used in a potentiometric mode, there is a threshold hydrogen concentration that the sensor can detect depending on the working conditions; 15 mbar at 575 °C and 10 mbar 650 °C. At 500 °C the minimum working temperature of this ceramic has not been achieved, so large deviations between experimental data and theoretical calculations has been obtained. When the sensor was used in an amperometric mode the obtained currents increased as a function of the applied voltage. At a fixed potential, the higher the temperature the higher the current was. So the sensor sensitivity can be tuned by changing the applied voltage at a fixed temperature and hydrogen concentration.

  12. A Smart Voltage and Current Monitoring System for Three Phase Inverters Using an Android Smartphone Application.

    Science.gov (United States)

    Mnati, Mohannad Jabbar; Van den Bossche, Alex; Chisab, Raad Farhood

    2017-04-15

    In this paper, a new smart voltage and current monitoring system (SVCMS) technique is proposed. It monitors a three phase electrical system using an Arduino platform as a microcontroller to read the voltage and current from sensors and then wirelessly send the measured data to monitor the results using a new Android application. The integrated SVCMS design uses an Arduino Nano V3.0 as the microcontroller to measure the results from three voltage and three current sensors and then send this data, after calculation, to the Android smartphone device of an end user using Bluetooth HC-05. The Arduino Nano V3.0 controller and Bluetooth HC-05 are a cheap microcontroller and wireless device, respectively. The new Android smartphone application that monitors the voltage and current measurements uses the open source MIT App Inventor 2 software. It allows for monitoring some elementary fundamental voltage power quality properties. An effort has been made to investigate what is possible using available off-the-shelf components and open source software.

  13. A novel method of temperature compensation for piezoresistive microcantilever-based sensors.

    Science.gov (United States)

    Han, Jianqiang; Wang, Xiaofei; Yan, Tianhong; Li, Yan; Song, Meixuan

    2012-03-01

    Microcantilever with integrated piezoresistor has been applied to in situ surface stress measurement in the field of biochemical sensors. It is well known that piezoresistive cantilever-based sensors are sensitive to ambient temperature changing due to highly temperature-dependent piezoresistive effect and mismatch in thermal expansion of composite materials. This paper proposes a novel method of temperature drift compensation for microcantilever-based sensors with a piezoresistive full Wheatstone bridge integrated at the clamped ends by subtracting the amplified output voltage of the reference cantilever from the output voltage of the sensing cantilever through a simple temperature compensating circuit. Experiments show that the temperature drift of microcantilever sensors can be significantly reduced by the method.

  14. Mapping the interaction site for the tarantula toxin hainantoxin-IV (β-TRTX-Hn2a) in the voltage sensor module of domain II of voltage-gated sodium channels.

    Science.gov (United States)

    Cai, Tianfu; Luo, Ji; Meng, Er; Ding, Jiuping; Liang, Songping; Wang, Sheng; Liu, Zhonghua

    2015-06-01

    Peptide toxins often have pharmacological applications and are powerful tools for investigating the structure-function relationships of voltage-gated sodium channels (VGSCs). Although a group of potential VGSC inhibitors have been reported from tarantula venoms, little is known about the mechanism of their interaction with VGSCs. In this study, we showed that hainantoxin-IV (β-TRTX-Hn2a, HNTX-IV in brief), a 35-residue peptide from Ornithoctonus hainana venom, preferentially inhibited rNav1.2, rNav1.3 and hNav1.7 compared with rNav1.4 and hNav1.5. hNav1.7 was the most sensitive to HNTX-IV (IC50∼21nM). In contrast to many other tarantula toxins that affect VGSCs, HNTX-IV at subsaturating concentrations did not alter activation and inactivation kinetics in the physiological range of voltages, while very large depolarization above +70mV could partially activate toxin-bound hNav1.7 channel, indicating that HNTX-IV acts as a gating modifier rather than a pore blocker. Site-directed mutagenesis indicated that the toxin bound to site 4, which was located on the extracellular S3-S4 linker of hNav1.7 domain II. Mutants E753Q, D816N and E818Q of hNav1.7 decreased toxin affinity for hNav1.7 by 2.0-, 3.3- and 130-fold, respectively. In silico docking indicated that a three-toed claw substructure formed by residues with close contacts in the interface between HNTX-IV and hNav1.7 domain II stabilized the toxin-channel complex, impeding movement of the domain II voltage sensor and inhibiting hNav1.7 activation. Our data provide structural details for structure-based drug design and a useful template for the design of highly selective inhibitors of a specific subtype of VGSCs. Copyright © 2014 Elsevier Inc. All rights reserved.

  15. Charge losses in silicon sensors and electric-field studies at the Si-SiO{sub 2} interface

    Energy Technology Data Exchange (ETDEWEB)

    Poehlsen, Thomas

    2013-07-15

    added to the accumulation layer and when the accumulation layer returns to steady state is investigated. Irradiated silicon pad sensors are used to study the charge-collection efficiency (CCE) of charge carriers generated using laser light of 1063 nm wavelength, as a function of bulk material, active sensor thickness, voltage, temperature, particle type (for the irradiation) and fluence. As a cross check the CCE is also determined for charge carriers generated by electrons from a {sup 90}Sr-source. A precision of 3 % in the CCE is achieved. Sensors of n-doped and p-doped silicon are compared, as well as sensors of different crystal-growing methods (magnetic Czochralski (MCz) and float zone (FZ)). The sensor thickness varies from 200 {mu}m (MCz and FZ) to 320 {mu}m (FZ). The 320 {mu}m thick FZ sensors underwent a dopant-diffusion process (dd-FZ) to reduce the active sensor thickness. For the irradiation both protons of different energies (23 MeV and 23 GeV) and reactor neutrons ({proportional_to}1 MeV) are used. The achieved fluences are between 3.10{sup 14} cm{sup -2} and 1.3.10{sup 16} cm{sup -2} 1 MeV-neutron equivalent. The CCE is used to calculate the signal corresponding to a minimum-ionising particle (mip) traversing the sensor and to calculate the effective distance the generated charge carriers drift. While little difference in CCE between the 200 m thick MCz and FZ materials is found, the dd-FZ materials of both {proportional_to}200 {mu}m and {proportional_to}300 {mu}m active thickness have a lower CCE, corresponding also to a shorter effective drift distance. The CCE and the effective drift distance are also calculated for eh pairs generated close to the sensor surface using laser light of 660 nm wavelength. The measurements are not compatible with a position-independent trapping probability, and qualitative agreement with a position-dependent occupation of radiation-induced trapping centres due to the dark current is found.

  16. Oxygen sensor using proton-conductor thick-film operative at room temperature. Puroton dodentai atsumaku wo mochiita joon sadogata sanso sensor

    Energy Technology Data Exchange (ETDEWEB)

    Miura, Norio; Yoshida, Nobuaki; Matayoshi, Naoko; Shimizu, Yoichi; Yamazoe, Noboru; Kuwata, Shigeki [Kyushu Univ., Fukuoka, (Japan) Niihama National College of Tech., Ehime, (Japan)

    1989-10-01

    An amperometric solid-state oxygen sensor using a proton-conductor thick-film was examined as a miniaturized and intelligent oxygen sensor operative at room temperature. The good-conditioned proton-conductor film of about 10{mu}m in thickness without holes was formed on a porous alumina substrate by spin-coating the paste containing antimonic acid and a polyvinyl alcohol binder. Using this material, the thick-film oxygen sensor was made. A limiting current, controlled by oxygen permeation through the gas-diffusion layer, was observed when an external voltage was over 1.4V. The limiting current increased linearly with an increase in oxygen partial pressure up to 1.0 atm at an external voltage of 1.6V. The 90% response time for increasing oxygen partial pressure was about 40 seconds at 30 centigrade. Moreover, it was found that the sensor could also respond to dissolved oxygen in water at room temperature. With a sensor using a hydrophobic gas-diffusion layer containing a polystyrene binder, the limiting current was linear to the dissolved oxygen concentration up to 20ppm. 15 refs., 5 figs.

  17. High-k shallow traps observed by charge pumping with varying discharging times

    Energy Technology Data Exchange (ETDEWEB)

    Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Wang, Bin-Wei; Cao, Xi-Xin [Department of Embedded System Engineering, Peking University, Beijing, P.R.China (China); Chen, Hua-Mao [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu [Device Department, United Microelectronics Corporation, Tainan Science Park, Taiwan (China)

    2013-11-07

    In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO{sub 2}/metal gate stacks. N{sub T}-V{sub high} {sub level} characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N{sub T} for extra contribution of I{sub cp} traps. N{sub T} is the number of traps, and I{sub cp} is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I{sub cp} traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti{sub x}N{sub 1−x} metal gate concentrations. Next, N{sub T}-V{sub high} {sub level} characteristic curves with different falling times (t{sub falling} {sub time}) and base level times (t{sub base} {sub level}) show that extra contribution of I{sub cp} traps decrease with an increase in t{sub falling} {sub time}. By fitting discharge formula for different t{sub falling} {sub time}, the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t{sub falling} {sub time}. This current cannot be measured by the charge pumping technique. Subsequent measurements of N{sub T} by charge pumping technique at t{sub base} {sub level} reveal a remainder of electrons trapped in high-k bulk shallow traps.

  18. Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

    International Nuclear Information System (INIS)

    Cho, Joung-min; Akiyama, Yuto; Kakinuma, Tomoyuki; Mori, Takehiko

    2013-01-01

    We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulated characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical V G above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge

  19. A Low-input-voltage Wireless Power Transfer for Biomedical Implants

    DEFF Research Database (Denmark)

    Jiang, Hao; Bai, Kangjun; Zhu, Weijie

    2015-01-01

    Wireless power transfer is an essential technology to increase implants' longevity. A pair of inductivelycoupled coils operating at radio-frequency is extensively used to deliver electrical power to implants wirelessly. In this system, a power conditioning circuit is required convert the induced...... in the rectifier for the efficient AC to DC conversion. This requirement results in larger coil size, shorter operating distance or more stringent geometrical alignment between the two coils. In this paper, a low-input-voltage wireless power transfer has been demonstrated. In this system, the opencircuit voltage...... time-varying AC power harvested by the receiving coil to a stable DC power that is needed for powering circuits and sensors. Most existing power conditioning circuits require the induced voltage of the receiving coil to be significantly higher than the turn-on voltage of the diodes used...

  20. Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique

    International Nuclear Information System (INIS)

    Kaniewska, M.; Engstroem, O.

    2007-01-01

    Electron trapping centers at the GaAs/GaAs interface grown by molecular beam epitaxy (MBE)-interruption growth technique have been studied by capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS). Two main electron traps have been revealed with activation energies at 0.16 eV and 0.52 eV from the conduction band. Inhomogeneous spatial distributions of the traps, obtained by DLTS profiling, indicate that they are agglomerated at the interrupted interface on a concentration level of (2-3) x 10 15 cm -3 at their maximum. Their behaviour is typical of acceptor-like traps when investigating by C-V profiling as a function of temperature. Based on a comparison made with electron traps in MBE-GaAs as well as with the traps in InAs/GaAs quantum dot/quantum well (QD/QW) structures, we conclude they are the well-known EL10 and EL4 defects, respectively, and their concentrations are growth condition dependent. They may be point defect-impurity complexes. Their presence may cause interpretation and application problems of the low-dimensional InAs/GaAs structures

  1. Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique

    Energy Technology Data Exchange (ETDEWEB)

    Kaniewska, M. [Department of Analysis of Semicoductor Nanostructures, Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)], E-mail: kaniew@ite.waw.pl; Engstroem, O. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden)

    2007-09-15

    Electron trapping centers at the GaAs/GaAs interface grown by molecular beam epitaxy (MBE)-interruption growth technique have been studied by capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS). Two main electron traps have been revealed with activation energies at 0.16 eV and 0.52 eV from the conduction band. Inhomogeneous spatial distributions of the traps, obtained by DLTS profiling, indicate that they are agglomerated at the interrupted interface on a concentration level of (2-3) x 10{sup 15} cm{sup -3} at their maximum. Their behaviour is typical of acceptor-like traps when investigating by C-V profiling as a function of temperature. Based on a comparison made with electron traps in MBE-GaAs as well as with the traps in InAs/GaAs quantum dot/quantum well (QD/QW) structures, we conclude they are the well-known EL10 and EL4 defects, respectively, and their concentrations are growth condition dependent. They may be point defect-impurity complexes. Their presence may cause interpretation and application problems of the low-dimensional InAs/GaAs structures.

  2. High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip

    Science.gov (United States)

    Issadore, David; Franke, Thomas; Brown, Keith A.; Hunt, Thomas P.; Westervelt, Robert M.

    2010-01-01

    A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm2 in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip’s surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. PMID:20625468

  3. Resonance fluorescence revival in a voltage-controlled semiconductor quantum dot

    Science.gov (United States)

    Reigue, Antoine; Lemaître, Aristide; Gomez Carbonell, Carmen; Ulysse, Christian; Merghem, Kamel; Guilet, Stéphane; Hostein, Richard; Voliotis, Valia

    2018-02-01

    We demonstrate systematic resonance fluorescence recovery with near-unity emission efficiency in single quantum dots embedded in a charge-tunable device in a wave-guiding geometry. The quantum dot charge state is controlled by a gate voltage, through carrier tunneling from a close-lying Fermi sea, stabilizing the resonantly photocreated electron-hole pair. The electric field cancels out the charging/discharging mechanisms from nearby traps toward the quantum dots, responsible for the usually observed inhibition of the resonant fluorescence. Fourier transform spectroscopy as a function of the applied voltage shows a strong increase in the coherence time though not reaching the radiative limit. These charge controlled quantum dots can act as quasi-perfect deterministic single-photon emitters, with one laser pulse converted into one emitted single photon.

  4. Enhanced memory effect with embedded graphene nanoplatelets in ZnO charge trapping layer

    International Nuclear Information System (INIS)

    El-Atab, Nazek; Nayfeh, Ammar; Cimen, Furkan; Alkis, Sabri; Okyay, Ali K.

    2014-01-01

    A charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated. The memory shows a large threshold voltage V t shift (4 V) at low operating voltage (6/−6 V), good retention (>10 yr), and good endurance characteristic (>10 4 cycles). This memory performance is compared to control devices with graphene nanoplatelets (or ZnO) and a thicker tunnel oxide. These structures showed a reduced V t shift and retention characteristic. The GNIZ structure allows for scaling down the tunnel oxide thickness along with improving the memory window and retention of data. The larger V t shift indicates that the ZnO adds available trap states and enhances the emission and retention of charges. The charge emission mechanism in the memory structures with graphene nanoplatelets at an electric field E ≥ 5.57 MV/cm is found to be based on Fowler-Nordheim tunneling. The fabrication of this memory device is compatible with current semiconductor processing, therefore, has great potential in low-cost nano-memory applications.

  5. Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

    Science.gov (United States)

    Patel, N.; Branch, D. W.; Schamiloglu, E.; Cular, S.

    2015-08-01

    A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz-100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10-273 ps for DC voltages and 189-813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250-2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115-1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.

  6. Paul trap experiment to simulate intense nonneutral beam propagation through a periodic focusing field configuration

    CERN Document Server

    Davidson, R C; Majeski, R; Qin, H; Shvets, G

    2001-01-01

    This paper describes the design concept for a compact Paul trap experimental configuration that fully simulates the collective processes and nonlinear transverse dynamics of an intense charged particle beam that propagates over large distances through a periodic quadrupole magnetic field. To summarize, a long nonneutral plasma column (L>=r sub p) is confined axially by applied DC voltages V[circ]=const. on end cylinders at z=+-L, and transverse confinement is provided by segmented cylindrical electrodes (at radius r sub w) with applied oscillatory voltages +-V sub 0 (t) over 90 deg. segments. Because the transverse focusing force is similar in waveform to that produced by a discrete set of periodic quadrupole magnets in a frame moving with the beam, the Paul trap configuration offers the possibility of simulating intense beam propagation in a compact experimental facility. The nominal operating parameters in the experimental design are: barium ions (A=137); plasma column length 2L=2 m; wall radius r sub w =10...

  7. Digital Realization of Capacitor-Voltage Feedback Active Damping for LCL-Filtered Grid Converters

    DEFF Research Database (Denmark)

    Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

    2015-01-01

    The capacitor voltage of an LCL-filter can also be used for active damping, if it is fed back for synchronization. By this way, an extra current sensor can be avoided. Compared with the existing active damping techniques designed with capacitor current feedback, the capacitor voltage feedback....... To overcome their drawbacks, a new derivative method is then proposed, based on the non-ideal generalized integrator. The performance of the proposed derivative has been found to match the ideal “s” function closely. Active damping based on capacitor voltage feedback can therefore be realized accurately...

  8. Highly Accurate Derivatives for LCL-Filtered Grid Converter with Capacitor Voltage Active Damping

    DEFF Research Database (Denmark)

    Xin, Zhen; Loh, Poh Chiang; Wang, Xiongfei

    2016-01-01

    The middle capacitor voltage of an LCL-filter, if fed back for synchronization, can be used for active damping. An extra sensor for measuring the capacitor current is then avoided. Relating the capacitor voltage to existing popular damping techniques designed with capacitor current feedback would...... are then proposed, based on either second-order or non-ideal generalized integrator. Performances of these derivatives have been found to match the ideal “s” function closely. Active damping based on capacitor voltage feedback can therefore be realized accurately. Experimental results presented have verified...

  9. Confinement in a cryogenic Penning trap of highest charge state ions from EBIT

    International Nuclear Information System (INIS)

    Schneider, D.

    1994-01-01

    The retrapping of highly charged Xe 44+ and Th 68+,72+ ions extracted from an open-quotes Electron Beam Ion Trapclose quotes (EBIT) is demonstrated after injection of the ions into RETRAP, a cryogenic Penning trap (up to 6 Tesla magnetic field) currently with an open cylinder design. Ion extraction in a short pulse (5-20 μsec) from EBIT, essential for efficient retrapping, is employed. The ions are slowed down upon entering a deceleration tube mounted above the trap within the magnetic field. The potential is then rapidly (100 ns) decreased, enabling low energy ions to enter the trap. Capture efficiencies up to 25% are observed via detection of the delayed ion release pulse with a detector below the trap. Signal voltages induced in a tuned circuit due to single and multiple ions have been observed by tuning the ion resonant axial oscillation frequencies for different ions. Results from transporting and retrapping of the ions, as well as their detection, are described and the trapping efficiency is discussed, The motivation for these studies is to cool the trapped very highly charged ions to low temperatures (< 4 K) in order to perform ultrahigh resolution precision spectroscopy, collision studies at ultra low energies and to observe phase transitions in Coulomb clusters of highly charged ions

  10. Effect of single walled carbon nanotubes on the threshold voltage of dye based photovoltaic devices

    International Nuclear Information System (INIS)

    Chakraborty, S.; Manik, N.B.

    2016-01-01

    Carbon nanotubes are being widely used in organic photovoltaic (OPV) devices as their usage has been reported to enhance the device efficiency along with other related parameters. In this work we have studied the energy (E_c) effect of single walled carbon nanotubes (SWCNT) on the threshold voltage (V_t_h) and also on the trap states of dye based photovoltaic devices. SWCNT is added in a series of dyes such as Rose Bengal (RB), Methyl Red (MR), Malachite Green (MG) and Crystal Violet (CV). By analysing the steady state dark current–voltage (I–V) characteristics V_t_h and E_c is estimated for the different devices with and without addition of SWCNT. It is observed that on an average for all the dyes V_t_h is reduced by about 30% in presence of SWCNT. The trap energy E_c also reduces in case of all the dyes. The relation between V_t_h, E_c and total trap density is discussed. From the photovoltaic measurements it is seen that the different photovoltaic parameters change with addition of SWCNT to the dye based devices. Both the short circuit current density and fill factor are found to increase for all the dye based devices in presence of SWCNT.

  11. Rancang Buat Sensor Kekeruhan Air Berbasis Serat Optik Plastik

    OpenAIRE

    Irwan, Indawani

    2017-01-01

    It has been the research concerning about turbidity sensor based on plastic optical fiber is used to measure degree of turbidity water. Turbidity sensor based on plastic optical fiber have two types, there are optical fiber sensor with cladding and without cladding. This sensor was made with different types of lenghts and configuration. Turbidity sensor was made, dippeded into a turbidity water samples. The results showed us that output voltage is not comprabel with turbidity sample concentra...

  12. Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors.

    Science.gov (United States)

    He, Tao; Wu, Yanfei; D'Avino, Gabriele; Schmidt, Elliot; Stolte, Matthias; Cornil, Jérôme; Beljonne, David; Ruden, P Paul; Würthner, Frank; Frisbie, C Daniel

    2018-05-30

    Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.

  13. A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology

    International Nuclear Information System (INIS)

    Su Shi; Liao Xiaoping

    2009-01-01

    This paper presents the modeling, fabrication, and measurement of a capacitive membrane MEMS microwave power sensor. The sensor measures microwave power coupled from coplanar waveguide (CPW) transmission lines by a MEMS membrane and then converts it into a DC voltage output by using thermopiles. Since the fabrication process is fully compatible with the GaAs monolithic microwave integrated circuit (MMIC) process, this sensor could be conveniently embedded into MMIC. From the measured DC voltage output and S-parameters, the average sensitivity in the X-band is 225.43 μV/mW, while the reflection loss is below -14 dB. The MEMS microwave power sensor has good linearity with a voltage standing wave ration of less than 1.513 in the whole X-band. In addition, the measurements using amplitude modulation signals prove that the modulation index directly influences the output DC voltage.

  14. Tuning the hysteresis voltage in 2D multilayer MoS{sub 2} FETs

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Jie, E-mail: jiangjie@csu.edu.cn; Zheng, Zhouming; Guo, Junjie

    2016-10-01

    The hysteresis tuning is of great significance before the two-dimensional (2D) molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) can be practically used in the next-generation nanoelectronic devices. In this paper, a simple and effective annealing method was developed to tune the hysteresis voltage in 2D MoS{sub 2} transistors. It was found that high temperature (175 °C) annealing in air could increase the hysteresis voltage from 8.0 V (original device) to 28.4 V, while a next vacuum annealing would reduce the hysteresis voltage to be only 2.0 V. An energyband diagram model based on electron trapping/detrapping due to oxygen adsorption is proposed to understand the hysteresis mechanism in multilayer MoS{sub 2} FET. This simple method for tuning the hysteresis voltage of MoS{sub 2} FET can make a significant step toward 2D nanoelectronic device applications.

  15. Total dose radiation effects of pressure sensors fabricated on uni-bond-SOI materials

    International Nuclear Information System (INIS)

    Zhu Shiyang; Huang Yiping; Wang Jin; Li Anzhen; Shen Shaoqun; Bao Minhang

    2001-01-01

    Piezoresistive pressure sensors with a twin-island structure were successfully fabricated using high quality Uni-bond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline silicon overlayer of the SOI wafer and were totally isolated by the buried SiO 2 , the sensors are radiation-hard. The sensitivity and the linearity of the pressure sensors keep their original values after being irradiated by 60 Co γ-rays up to 2.3 x 10 4 Gy(H 2 O). However, the offset voltage of the sensor has a slight drift, increasing with the radiation dose. The absolute value of the offset voltage deviation depends on the pressure sensor itself. For comparison, corresponding polysilicon pressure sensors were fabricated using the similar process and irradiated at the same condition

  16. Sideband cooling and coherent dynamics in a microchip multi-segmented ion trap

    Energy Technology Data Exchange (ETDEWEB)

    Schulz, Stephan A; Poschinger, Ulrich; Ziesel, Frank; Schmidt-Kaler, Ferdinand [Universitaet Ulm, Institut fuer Quanteninformationsverarbeitung, Albert-Einstein-Allee 11, D-89069 Ulm (Germany)], E-mail: stephan.schulz@uni-ulm.de

    2008-04-15

    Miniaturized ion trap arrays with many trap segments present a promising architecture for scalable quantum information processing. The miniaturization of segmented linear Paul traps allows partitioning the microtrap into different storage and processing zones. The individual position control of many ions-each of them carrying qubit information in its long-lived electronic levels-by the external trap control voltages is important for the implementation of next generation large-scale quantum algorithms. We present a novel scalable microchip multi-segmented ion trap with two different adjacent zones, one for the storage and another dedicated to the processing of quantum information using single ions and linear ion crystals. A pair of radio-frequency-driven electrodes and 62 independently controlled dc electrodes allows shuttling of single ions or linear ion crystals with numerically designed axial potentials at axial and radial trap frequencies of a few megahertz. We characterize and optimize the microtrap using sideband spectroscopy on the narrow S{sub 1/2}{r_reversible}D{sub 5/2} qubit transition of the {sup 40}Ca{sup +} ion, and demonstrate coherent single-qubit Rabi rotations and optical cooling methods. We determine the heating rate using sideband cooling measurements to the vibrational ground state, which is necessary for subsequent two-qubit quantum logic operations. The applicability for scalable quantum information processing is proved.

  17. The control mechanism of surface traps on surface charge behavior in alumina-filled epoxy composites

    International Nuclear Information System (INIS)

    Li, Chuanyang; Hu, Jun; Lin, Chuanjie; He, Jinliang

    2016-01-01

    To investigate the role surface traps play in the charge injection and transfer behavior of alumina-filled epoxy composites, surface traps with different trap levels are introduced by different surface modification methods which include dielectric barrier discharges plasma, direct fluorination, and Cr 2 O 3 coating. The resulting surface physicochemical characteristics of experimental samples were observed using atomic force microscopy, scanning electron microscopy and fourier transform infrared spectroscopy. The surface potential under dc voltage was detected and the trap level distribution was measured. The results suggest that the surface morphology of the experimental samples differs dramatically after treatment with different surface modification methods. Different surface trap distributions directly determine the charge injection and transfer property along the surface. Shallow traps with trap level of 1.03–1.11 eV and 1.06–1.13 eV introduced by plasma and fluorination modifications are conducive for charge transport along the insulating surface, and the surface potential can be modified, producing a smoother potential curve. The Cr 2 O 3 coating can introduce a large number of deep traps with energy levels ranging from 1.09 to 1.15 eV. These can prevent charge injection through the reversed electric field formed by intensive trapped charges in the Cr 2 O 3 coatings. (paper)

  18. Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes.

    Science.gov (United States)

    Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

    2016-11-10

    We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS 2 ) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS 2 and pentacene. The pentacene/MoS 2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

  19. A Quantitative Evaluation of Drive Pattern Selection for Optimizing EIT-Based Stretchable Sensors

    Directory of Open Access Journals (Sweden)

    Stefania Russo

    2017-08-01

    Full Text Available Electrical Impedance Tomography (EIT is a medical imaging technique that has been recently used to realize stretchable pressure sensors. In this method, voltage measurements are taken at electrodes placed at the boundary of the sensor and are used to reconstruct an image of the applied touch pressure points. The drawback with EIT-based sensors, however, is their low spatial resolution due to the ill-posed nature of the EIT reconstruction. In this paper, we show our performance evaluation of different EIT drive patterns, specifically strategies for electrode selection when performing current injection and voltage measurements. We compare voltage data with Signal-to-Noise Ratio (SNR and Boundary Voltage Changes (BVC, and study image quality with Size Error (SE, Position Error (PE and Ringing (RNG parameters, in the case of one-point and two-point simultaneous contact locations. The study shows that, in order to improve the performance of EIT based sensors, the electrode selection strategies should dynamically change correspondingly to the location of the input stimuli. In fact, the selection of one drive pattern over another can improve the target size detection and position accuracy up to 4.7% and 18%, respectively.

  20. A Quantitative Evaluation of Drive Pattern Selection for Optimizing EIT-Based Stretchable Sensors.

    Science.gov (United States)

    Russo, Stefania; Nefti-Meziani, Samia; Carbonaro, Nicola; Tognetti, Alessandro

    2017-08-31

    Electrical Impedance Tomography (EIT) is a medical imaging technique that has been recently used to realize stretchable pressure sensors. In this method, voltage measurements are taken at electrodes placed at the boundary of the sensor and are used to reconstruct an image of the applied touch pressure points. The drawback with EIT-based sensors, however, is their low spatial resolution due to the ill-posed nature of the EIT reconstruction. In this paper, we show our performance evaluation of different EIT drive patterns, specifically strategies for electrode selection when performing current injection and voltage measurements. We compare voltage data with Signal-to-Noise Ratio (SNR) and Boundary Voltage Changes (BVC), and study image quality with Size Error (SE), Position Error (PE) and Ringing (RNG) parameters, in the case of one-point and two-point simultaneous contact locations. The study shows that, in order to improve the performance of EIT based sensors, the electrode selection strategies should dynamically change correspondingly to the location of the input stimuli. In fact, the selection of one drive pattern over another can improve the target size detection and position accuracy up to 4.7% and 18%, respectively.

  1. Tunable superconducting resonators with integrated trap structures for coupling with ultracold atomic gases

    Energy Technology Data Exchange (ETDEWEB)

    Ferdinand, Benedikt; Wiedmaier, Dominik; Koelle, Dieter; Kleiner, Reinhold [Physikalisches Institut and Center for Quantum Science in LISA+, Universitaet Tuebingen (Germany); Bothner, Daniel [Physikalisches Institut and Center for Quantum Science in LISA+, Universitaet Tuebingen (Germany); Kavli Institute of Nanoscience, Delft University of Technology, Delft (Netherlands)

    2016-07-01

    We intend to investigate a hybrid quantum system where ultracold atomic gases play the role of a long-living quantum memory, coupled to a superconducting qubit via a coplanar waveguide transmission line resonator. As a first step we developed a resonator chip containing a Z-shaped trapping wire for the atom trap. In order to suppress parasitic resonances due to stray capacitances, and to achieve good ground connection we use hybrid superconductor - normal conductor chips. As an additional degree of freedom we add a ferroelectric capacitor making the resonators voltage-tunable. We furthermore show theoretical results on the expected coupling strength between resonator and atomic cloud.

  2. Note: Ion source design for ion trap systems

    Science.gov (United States)

    Noriega, J. R.; Quevedo, M.; Gnade, B.; Vasselli, J.

    2013-06-01

    A small plasma (glow discharge) based ion source and circuit are described in this work. The ion source works by producing a high voltage pulsed discharge between two electrodes in a pressure range of 50-100 mTorr. A third mesh electrode is used for ion extraction. The electrodes are small stainless steel screws mounted in a MACOR ionization chamber in a linear arrangement. The electrode arrangement is driven by a circuit, design for low power operation. This design is a proof of concept intended for applications on small cylindrical ion traps.

  3. Modular sensor network node

    Science.gov (United States)

    Davis, Jesse Harper Zehring [Berkeley, CA; Stark, Jr., Douglas Paul; Kershaw, Christopher Patrick [Hayward, CA; Kyker, Ronald Dean [Livermore, CA

    2008-06-10

    A distributed wireless sensor network node is disclosed. The wireless sensor network node includes a plurality of sensor modules coupled to a system bus and configured to sense a parameter. The parameter may be an object, an event or any other parameter. The node collects data representative of the parameter. The node also includes a communication module coupled to the system bus and configured to allow the node to communicate with other nodes. The node also includes a processing module coupled to the system bus and adapted to receive the data from the sensor module and operable to analyze the data. The node also includes a power module connected to the system bus and operable to generate a regulated voltage.

  4. The output characteristic of cantilever-like tactile sensor based on the inverse magnetostrictive effect

    Directory of Open Access Journals (Sweden)

    Lili Wan

    2017-05-01

    Full Text Available The output characteristic model of a magnetostrictive cantilever-like tactile sensor has been founded based on the inverse-magnetostrictive effect, the flexure mode, and the Jiles-Atherton model. The magnetostrictive sensor has been designed and an output voltage is analyzed under the conditions of bias magnetic field, contact pressure and deflection of cantilever beam. The experiment has been performed to determine the relation among the induced output voltage, bias magnetic field, and pressure. It is found that the peak of the induced output voltage increases with an increasing pressure under the bias magnetic field of 4.8kA/m. The experimental result agrees well with the theoretical one and it means that the model can describe the relation among the induced output voltage, bias magnetic field, and pressure. The sensor with a Galfenol sheet may hold potentials in sample characterization and deformation predication in artificial intelligence area.

  5. Analysis of the transfer function for layered piezoelectric ultrasonic sensors

    Directory of Open Access Journals (Sweden)

    E. Gutiérrrez-Reyes

    2017-06-01

    Full Text Available We model theoretically the voltage response to an acoustic pulse of a multilayer system forming a low noise capacitive sensor including a Polyvinylidene Fluoride piezoelectric film. First we model a generic piezoelectric detector consisting of a piezoelectric film between two metallic electrodes that are the responsible to convert the acoustic signal into a voltage signal. Then we calculate the pressure-to-voltage transfer function for a N-layer piezo-electric capacitor detector, allowing to study the effects of the electrode and protective layers thickness in typical layered piezoelectric sensors. The derived transfer function, when multiplied by the Fourier transform of the incident acoustic pulse, gives the voltage electric response in the frequency domain. An important concern regarding the transfer function is that it may have zeros at specific frequencies, and thus inverting the voltage Fourier transform of the pulse to recover the pressure signal in the time domain is not always, in principle, possible. Our formulas can be used to predict the existence and locations of such zeroes. We illustrate the use of the transfer function by predicting the electric signal generated at a multilayer piezoelectric sensor to an ultrasonic pulse generated photoacoustically by a laser pulse at a three media system with impedance mismatch. This theoretical calculations are compared with our own experimental measurements.

  6. Voltage linear transformation circuit design

    Science.gov (United States)

    Sanchez, Lucas R. W.; Jin, Moon-Seob; Scott, R. Phillip; Luder, Ryan J.; Hart, Michael

    2017-09-01

    Many engineering projects require automated control of analog voltages over a specified range. We have developed a computer interface comprising custom hardware and MATLAB code to provide real-time control of a Thorlabs adaptive optics (AO) kit. The hardware interface includes an op amp cascade to linearly shift and scale a voltage range. With easy modifications, any linear transformation can be accommodated. In AO applications, the design is suitable to drive a range of different types of deformable and fast steering mirrors (FSM's). Our original motivation and application was to control an Optics in Motion (OIM) FSM which requires the customer to devise a unique interface to supply voltages to the mirror controller to set the mirror's angular deflection. The FSM is in an optical servo loop with a wave front sensor (WFS), which controls the dynamic behavior of the mirror's deflection. The code acquires wavefront data from the WFS and fits a plane, which is subsequently converted into its corresponding angular deflection. The FSM provides +/-3° optical angular deflection for a +/-10 V voltage swing. Voltages are applied to the mirror via a National Instruments digital-to-analog converter (DAC) followed by an op amp cascade circuit. This system has been integrated into our Thorlabs AO testbed which currently runs at 11 Hz, but with planned software upgrades, the system update rate is expected to improve to 500 Hz. To show that the FSM subsystem is ready for this speed, we conducted two different PID tuning runs at different step commands. Once 500 Hz is achieved, we plan to make the code and method for our interface solution freely available to the community.

  7. PENGEMBANGAN ALAT PRAKTIKUM VISKOMETER METODE BOLA JATUH BEBAS BERBASIS SENSOR EFEK HALL UGN3503 SEBAGAI MEDIA PEMBELAJARAN FISIKA

    OpenAIRE

    Ramadhan, Diajeng; Serevina, Vina; Raihanati, Raihanati

    2016-01-01

    This research aims to develop learning media in the form of practical tool viscometer to measure the viscosity of the fluid using the method ball free fall to utilize hall effect sensor UGN3503 as detection sensor iron ball as it passes through the fluid and causes the magnetic field of the sensor is changed because the sensor is blocked by a magnetic iron ball, the magnitude magnetic field strength by a hall effect sensor changed into electrical quantities such as voltage output. The voltage...

  8. Development of an Intelligent Capacitive Mass Sensor Based on Co-axial Cylindrical Capacitor

    Directory of Open Access Journals (Sweden)

    Amir ABU AL AISH

    2009-06-01

    Full Text Available The paper presents a linear, robust and intelligent capacitive mass sensor made of a co-axial cylindrical capacitor. It is designed such that the mass under measurement is directly proportional to the capacitance of the sensor. The average value of the output voltage of a capacitance to voltage converter is proportional to the capacitance of the sensor. The output of the converter is measured and displayed, as mass, with the help of microcontroller. The results are free from the effect of stray capacitances which cause errors at low values of capacitances. Developed sensor is linear, free from errors due to temperature and highly flexible in design. The proto-type of the mass sensor can weigh up to 4 kilogram only.

  9. A solar charge and discharge controller for wireless sensor nodes

    Science.gov (United States)

    Dang, Yibo; Shen, Shu

    2018-02-01

    Aiming at the energy supply problem that restricts the life of wireless sensor nodes, a solar energy charge and discharge controller suitable for wireless sensor nodes is designed in this paper. A Microcontroller is used as the core of the solar charge and discharge controller. The software of the solar charge and discharge controller adopts the C language to realize the program of the main control module. Firstly, the function of monitoring solar panel voltage and lithium battery voltage are simulated by Protel software, and the charge time is tested in cloudy and overcast outdoor environment. The results of the experiment show that our controller meets the power supply demand of wireless sensor nodes.

  10. C-terminal modulatory domain controls coupling of voltage-sensing to pore opening in Cav1.3 L-type Ca(2+) channels.

    Science.gov (United States)

    Lieb, Andreas; Ortner, Nadine; Striessnig, Jörg

    2014-04-01

    Activity of voltage-gated Cav1.3 L-type Ca(2+) channels is required for proper hearing as well as sinoatrial node and brain function. This critically depends on their negative activation voltage range, which is further fine-tuned by alternative splicing. Shorter variants miss a C-terminal regulatory domain (CTM), which allows them to activate at even more negative potentials than C-terminally long-splice variants. It is at present unclear whether this is due to an increased voltage sensitivity of the Cav1.3 voltage-sensing domain, or an enhanced coupling of voltage-sensor conformational changes to the subsequent opening of the activation gate. We studied the voltage-dependence of voltage-sensor charge movement (QON-V) and of current activation (ICa-V) of the long (Cav1.3L) and a short Cav1.3 splice variant (Cav1.342A) expressed in tsA-201 cells using whole cell patch-clamp. Charge movement (QON) of Cav1.3L displayed a much steeper voltage-dependence and a more negative half-maximal activation voltage than Cav1.2 and Cav3.1. However, a significantly higher fraction of the total charge had to move for activation of Cav1.3 half-maximal conductance (Cav1.3: 68%; Cav1.2: 52%; Cav3.1: 22%). This indicated a weaker coupling of Cav1.3 voltage-sensor charge movement to pore opening. However, the coupling efficiency was strengthened in the absence of the CTM in Cav1.342A, thereby shifting ICa-V by 7.2 mV to potentials that were more negative without changing QON-V. We independently show that the presence of intracellular organic cations (such as n-methyl-D-glucamine) induces a pronounced negative shift of QON-V and a more negative activation of ICa-V of all three channels. These findings illustrate that the voltage sensors of Cav1.3 channels respond more sensitively to depolarization than those of Cav1.2 or Cav3.1. Weak coupling of voltage sensing to pore opening is enhanced in the absence of the CTM, allowing short Cav1.342A splice variants to activate at lower voltages

  11. Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

    2015-08-24

    Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

  12. Development of a Simple Traffic Sensor and System with Vehicle Classification Based on PVDF Film Element

    Directory of Open Access Journals (Sweden)

    D. R. SANTOSO

    2011-03-01

    Full Text Available In this paper, piezoelectric sensor system for measuring traffic flow with vehicle classification is proposed and investigated. Sensing element is made of PVDF film, which on both sides plastered with sheets of metal electrodes for making electrical connections. This sensor will generate electric voltage when subjected to mechanical pressure by the wheels of the vehicle. The signal conditioning is required to make sensor output voltage in the range of 0-5 Volts. To classify the types of vehicles crossing the sensor, three-level comparator is used, with specifications of a low voltage reference for motorcycles, medium voltage reference for a family vehicle, and a high voltage reference for buses, trucks and the like. Output of the comparators are already a logic '0' or '1' is then processed by a microcontroller based data acquisition system that the output shows the number and type of vehicles that crossed the road in the form of digital code. These data then transmitted to a control centre that was built based on a PC. At the control centre, traffic data tabulated in the form of measurement database and stored for further analysis.

  13. Trapped-Ion Quantum Logic with Global Radiation Fields.

    Science.gov (United States)

    Weidt, S; Randall, J; Webster, S C; Lake, K; Webb, A E; Cohen, I; Navickas, T; Lekitsch, B; Retzker, A; Hensinger, W K

    2016-11-25

    Trapped ions are a promising tool for building a large-scale quantum computer. However, the number of required radiation fields for the realization of quantum gates in any proposed ion-based architecture scales with the number of ions within the quantum computer, posing a major obstacle when imagining a device with millions of ions. Here, we present a fundamentally different approach for trapped-ion quantum computing where this detrimental scaling vanishes. The method is based on individually controlled voltages applied to each logic gate location to facilitate the actual gate operation analogous to a traditional transistor architecture within a classical computer processor. To demonstrate the key principle of this approach we implement a versatile quantum gate method based on long-wavelength radiation and use this method to generate a maximally entangled state of two quantum engineered clock qubits with fidelity 0.985(12). This quantum gate also constitutes a simple-to-implement tool for quantum metrology, sensing, and simulation.

  14. Current—voltage characteristics of lead zirconate titanate/nickel bilayered hollow cylindrical magnetoelectric composites

    International Nuclear Information System (INIS)

    De-An, Pan; Shen-Gen, Zhang; Jian-Jun, Tian; Li-Jie, Qiao; Jun-Sai, Sun; Volinsky, Alex A.

    2010-01-01

    Current–voltage measurements obtained from lead zirconate titanate/nickel bilayered hollow cylindrical magnetoelectric composite showed that a sinusoidal current applied to the copper coil wrapped around the hollow cylinder circumference induces voltage across the lead zirconate titanate layer thickness. The current–voltage coefficient and the maximum induced voltage in lead zirconate titanate at 1 kHz and resonance (60.1 kHz) frequencies increased linearly with the number of the coil turns and the applied current. The resonance frequency corresponds to the electromechanical resonance frequency. The current–voltage coefficient can be significantly improved by optimizing the magnetoelectric structure geometry and/or increasing the number of coil turns. Hollow cylindrical lead zirconate titanate/nickel structures can be potentially used as current sensors. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  15. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

    Science.gov (United States)

    Anand, M. J.; Ng, G. I.; Arulkumaran, S.; Manoj Kumar, C. M.; Ranjan, K.; Vicknesh, S.; Foo, S. C.; Syamal, B.; Zhou, X.

    2015-02-01

    The influence of electric field (EF) on the dynamic ON-resistance (dyn-RDS[ON]) and threshold-voltage shift (ΔVth) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (IDS-VDS) and drain current (ID) transients. Different EF was realized with devices of different gate-drain spacing (Lgd) under the same OFF-state stress. Under high-EF (Lgd = 2 μm), the devices exhibited higher dyn-RDS[ON] degradation but a small ΔVth (˜120 mV). However, at low-EF (Lgd = 5 μm), smaller dyn-RDS[ON] degradation but a larger ΔVth (˜380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-RDS[ON] degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔVth. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by ID-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

  16. A CMOS pressure sensor tag chip for passive wireless applications.

    Science.gov (United States)

    Deng, Fangming; He, Yigang; Li, Bing; Zuo, Lei; Wu, Xiang; Fu, Zhihui

    2015-03-23

    This paper presents a novel monolithic pressure sensor tag for passive wireless applications. The proposed pressure sensor tag is based on an ultra-high frequency RFID system. The pressure sensor element is implemented in the 0.18 µm CMOS process and the membrane gap is formed by sacrificial layer release, resulting in a sensitivity of 1.2 fF/kPa within the range from 0 to 600 kPa. A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of -20 dBm. The capacitive sensor interface, using phase-locked loop archietcture, employs fully-digital blocks, which results in a 7.4 bits resolution and 0.8 µW power dissipation at 0.8 V supply voltage. The proposed passive wireless pressure sensor tag costs a total 3.2 µW power dissipation.

  17. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.; Kalboussi, A. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Aimez, V. [Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada); Drouin, D. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Souifi, A. [Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)

    2016-09-15

    In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

  18. Local anesthetics disrupt energetic coupling between the voltage-sensing segments of a sodium channel.

    Science.gov (United States)

    Muroi, Yukiko; Chanda, Baron

    2009-01-01

    Local anesthetics block sodium channels in a state-dependent fashion, binding with higher affinity to open and/or inactivated states. Gating current measurements show that local anesthetics immobilize a fraction of the gating charge, suggesting that the movement of voltage sensors is modified when a local anesthetic binds to the pore of the sodium channel. Here, using voltage clamp fluorescence measurements, we provide a quantitative description of the effect of local anesthetics on the steady-state behavior of the voltage-sensing segments of a sodium channel. Lidocaine and QX-314 shifted the midpoints of the fluorescence-voltage (F-V) curves of S4 domain III in the hyperpolarizing direction by 57 and 65 mV, respectively. A single mutation in the S6 of domain IV (F1579A), a site critical for local anesthetic block, abolished the effect of QX-314 on the voltage sensor of domain III. Both local anesthetics modestly shifted the F-V relationships of S4 domain IV toward hyperpolarized potentials. In contrast, the F-V curve of the S4 domain I was shifted by 11 mV in the depolarizing direction upon QX-314 binding. These antagonistic effects of the local anesthetic indicate that the drug modifies the coupling between the voltage-sensing domains of the sodium channel. Our findings suggest a novel role of local anesthetics in modulating the gating apparatus of the sodium channel.

  19. A novel method of methanol concentration control through feedback of the amplitudes of output voltage fluctuations for direct methanol fuel cells

    International Nuclear Information System (INIS)

    An, Myung-Gi; Mehmood, Asad; Hwang, Jinyeon; Ha, Heung Yong

    2016-01-01

    This study proposes a novel method for controlling the methanol concentration without using methanol sensors for DMFC (direct methanol fuel cell) systems that have a recycling methanol-feed loop. This method utilizes the amplitudes of output voltage fluctuations of DMFC as a feedback parameter to control the methanol concentration. The relationship between the methanol concentrations and the amplitudes of output voltage fluctuations is correlated under various operating conditions and, based on the experimental correlations, an algorithm to control the methanol concentration with no sensor is established. Feasibility tests of the algorithm have been conducted under various operating conditions including varying ambient temperature with a 200 W-class DMFC system. It is demonstrated that the sensor-less controller is able to control the methanol-feed concentration precisely and to run the DMFC systems more energy-efficiently as compared with other control systems. - Highlights: • A new sensor-less algorithm is proposed to control the methanol concentration without using a sensor. • The algorithm utilizes the voltage fluctuations of DMFC as a feedback parameter to control the methanol feed concentration. • A 200 W DMFC system is operated to evaluate the validity of the sensor-less algorithm. • The algorithm successfully controls the methanol feed concentration within a small error bound.

  20. Solid electrolyte gas sensors based on cyclic voltammetry with one active electrode

    Energy Technology Data Exchange (ETDEWEB)

    Jasinski, G; Jasinski, P, E-mail: gregor@biomed.eti.pg.gda.pl [Gdansk University of Technology, Faculty of Electronics, Telecommunication and Informatics, Narutowicza 11/12, 80-233 Gdansk (Poland)

    2011-10-29

    Solid state gas sensors are cost effective, small, rugged and reliable. Typically electrochemical solid state sensors operate in either potentiometric or amperometric mode. However, a lack of selectivity is sometimes a shortcoming of such sensors. It seems that improvements of selectivity can be obtained in case of the electrocatalytic sensors, which operate in cyclic voltammetry mode. Their working principle is based on acquisition of an electric current, while voltage ramp is applied to the sensor. The current-voltage response depends in a unique way on the type and concentration of ambient gas. Most electrocatalytic sensors have symmetrical structure. They are in a form of pellets with two electrodes placed on their opposite sides. Electrochemical reactions occur simultaneously on both electrodes. In this paper results for sensors with only one active electrode exposed to ambient gas are presented. The other electrode was isolated from ambient gas with dielectric sealing. This sensor construction allows application of advanced measuring procedures, which permit sensor regeneration acceleration. Experiments were conducted on Nasicon sensors. Properties of two sensors, one with one active electrode and second with symmetrical structure, used for the detection of mixtures of NO{sub 2} and synthetic air are compared.

  1. Charge-trapping effect of doped fluorescent dye on the electroluminescent processes and its performance in polymer light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Ye Tengling; Chen Zhenyu; Chen Jiangshan [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China); Ma Dongge, E-mail: mdg1014@ciac.jl.cn [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China)

    2010-11-15

    We have measured the temperature dependence of the steady-state current-voltage (I-V) characteristics and the transient electroluminescent (EL) characteristics in 4-(dicyanomethylene)-2-t-propyl-6-(1,1,7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) doped polyfluorene devices to study the charge-trapping effect of DCJTB fluorescent dye on luminescence processes and on device performance. Physical and chemical analyses prove that DCJTB molecules serve both as electron and hole traps, and the charge-trapping effect is more sensitive against the electrons than the holes at the low dopant concentration. This intrinsic characteristic causes the electron to be injected into the emitting layer first and then trapped in the bulk, producing a strong effect on device performance.

  2. Design and Experimental Verification of a 0.19 V 53 μW 65 nm CMOS Integrated Supply-Sensing Sensor With a Supply-Insensitive Temperature Sensor and an Inductive-Coupling Transmitter for a Self-Powered Bio-sensing System Using a Biofuel Cell.

    Science.gov (United States)

    Kobayashi, Atsuki; Ikeda, Kei; Ogawa, Yudai; Kai, Hiroyuki; Nishizawa, Matsuhiko; Nakazato, Kazuo; Niitsu, Kiichi

    2017-12-01

    In this paper, we present a self-powered bio-sensing system with the capability of proximity inductive-coupling communication for supply sensing and temperature monitoring. The proposed bio-sensing system includes a biofuel cell as a power source and a sensing frontend that is associated with the CMOS integrated supply-sensing sensor. The sensor consists of a digital-based gate leakage timer, a supply-insensitive time-domain temperature sensor, and a current-driven inductive-coupling transmitter and achieves low-voltage operation. The timer converts the output voltage from a biofuel cell to frequency. The temperature sensor provides a pulse width modulation (PWM) output that is not dependent on the supply voltage, and the associated inductive-coupling transmitter enables proximity communication. A test chip was fabricated in 65 nm CMOS technology and consumed 53 μW with a supply voltage of 190 mV. The low-voltage-friendly design satisfied the performance targets of each integrated sensor without any trimming. The chips allowed us to successfully demonstrate proximity communication with an asynchronous receiver, and the measurement results show the potential for self-powered operation using biofuel cells. The analysis and experimental verification of the system confirmed their robustness.

  3. A sensorless control method for capacitor voltage balance and circulating current suppression of modular multilevel converter

    DEFF Research Database (Denmark)

    Liu, Hui; Ma, Ke; Loh, Poh Chiang

    2015-01-01

    There are several problems in the Modular Multilevel Converter (MMC), such as the appearance of circulating current, capacitor voltage unbalance and the requirement for a high number of sensors. All these problems will decrease the reliability and raise the cost/uncertainty of using MMC solutions....... As a result, a sensorless control method is proposed in this paper, which targets to improve the performances of MMC in respect to the above mentioned disadvantages: To decrease the cost and simplify the physical implementation, a state observer is proposed and designed to estimate both the capacitor voltages...... and the circulating currents in order to replace the high numbers of sensors. Furthermore, a control method combining the circulating current suppression and the capacitor voltage balancing is conducted based on the proposed state observer. It is concluded that the proposed state observer and control method can...

  4. Loading of mass spectrometry ion trap with Th ions by laser ablation for nuclear frequency standard application.

    Science.gov (United States)

    Borisyuk, Petr V; Derevyashkin, Sergey P; Khabarova, Ksenia Y; Kolachevsky, Nikolay N; Lebedinsky, Yury Y; Poteshin, Sergey S; Sysoev, Alexey A; Tkalya, Evgeny V; Tregubov, Dmitry O; Troyan, Viktor I; Vasiliev, Oleg S; Yakovlev, Valery P; Yudin, Valery I

    2017-08-01

    We describe an original multisectional quadrupole ion trap aimed to realize nuclear frequency standard based on the unique isomer transition in thorium nucleus. It is shown that the system effectively operates on Th + , Th 2+ and Th 3+ ions produced by laser ablation of metallic thorium-232 target. Laser intensity used for ablation is about 6 GW/cm 2 . Via applying a bias potential to every control voltage including the RF one, we are able not only to manipulate ions within the energy range as wide as 1-500 eV but to specially adjust trap potentials in order to work mainly with ions that belong to energy distribution maximum and therefore to effectively enhance the number of trapped ions. Measurement of energy distributions of 232 Th + , 232 Th 2+ , 232 Th 3+ ions obtained by laser ablation allows us to define optimal potential values for trapping process. Observed number of ions inside trap in dependence on trapping time is found to obey an unusually slow - logarithmic decay law that needs more careful study.

  5. Low driving voltage simplified tandem organic light-emitting devices by using exciplex-forming hosts

    Science.gov (United States)

    Zhou, Dong-Ying; Cui, Lin-Song; Zhang, Ying-Jie; Liao, Liang-Sheng; Aziz, Hany

    2014-10-01

    Tandem organic light-emitting devices (OLEDs), i.e., OLEDs containing multiple electroluminescence (EL) units that are vertically stacked, are attracting significant interest because of their ability to realize high current efficiency and long operational lifetime. However, stacking multiple EL units in tandem OLEDs increases driving voltage and complicates fabrication process relative to their standard single unit counterparts. In this paper, we demonstrate low driving voltage tandem OLEDs via utilizing exciplex-forming hosts in the EL units instead of conventional host materials. The use of exciplex-forming hosts reduces the charge injection barriers and the trapping of charges on guest molecules, resulting in the lower driving voltage. The use of exciplex-forming hosts also allows using fewer layers, hence simpler EL configuration which is beneficial for reducing the fabrication complexity of tandem OLEDs.

  6. Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

    International Nuclear Information System (INIS)

    Patel, N.; Branch, D. W.; Cular, S.; Schamiloglu, E.

    2015-01-01

    A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO 3 ) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment

  7. Probing the density of trap states in the middle of the bandgap using ambipolar organic field-effect transistors

    Science.gov (United States)

    Häusermann, Roger; Chauvin, Sophie; Facchetti, Antonio; Chen, Zhihua; Takeya, Jun; Batlogg, Bertram

    2018-04-01

    The number of trap states in the band gap of organic semiconductors directly influences the charge transport as well as the threshold and turn-on voltage. Direct charge transport measurements have been used until now to probe the trap states rather close to the transport level, whereas their number in the middle of the band gap has been elusive. In this study, we use PDIF-CN2, a well known n-type semiconductor, together with vanadium pentoxide electrodes to build ambipolar field-effect transistors. Employing three different methods, we study the density of trap states in the band gap of the semiconductor. These methods give consistent results, and no pool of defect states was found. Additionally, we show first evidence that the number of trap states close to the transport level is correlated with the number of traps in the middle of the band-gap, meaning that a high number of trap states close to the transport level also implies a high number of trap states in the middle of the band gap. This points to a common origin of the trap states over a wide energy range.

  8. Reconfiguration of sustainable thermoelectric generation using wireless sensor network

    DEFF Research Database (Denmark)

    Chen, Min

    2014-01-01

    wireless sensor networks (WSNs), where remotely deployed temperature and voltage sensors as well as latching relays can be organized as a whole to intelligently identify and execute the optimal interconnection of TEM strings. A reconfigurable TEM array with a WSN controller and a maximum power point...

  9. Ultrathin flexible piezoelectric sensors for monitoring eye fatigue

    Science.gov (United States)

    Lü, Chaofeng; Wu, Shuang; Lu, Bingwei; Zhang, Yangyang; Du, Yangkun; Feng, Xue

    2018-02-01

    Eye fatigue is a symptom induced by long-term work of both eyes and brains. Without proper treatment, eye fatigue may incur serious problems. Current studies on detecting eye fatigue mainly focus on computer vision detect technology which can be very unreliable due to occasional bad visual conditions. As a solution, we proposed a wearable conformal in vivo eye fatigue monitoring sensor that contains an array of piezoelectric nanoribbons integrated on an ultrathin flexible substrate. By detecting strains on the skin of eyelid, the sensors may collect information about eye blinking, and, therefore, reveal human’s fatigue state. We first report the design and fabrication of the piezoelectric sensor and experimental characterization of voltage responses of the piezoelectric sensors. Under bending stress, the output voltage curves yield key information about the motion of human eyelid. We also develop a theoretical model to reveal the underlying mechanism of detecting eyelid motion. Both mechanical load test and in vivo test are conducted to convince the working performance of the sensors. With satisfied durability and high sensitivity, this sensor may efficiently detect abnormal eyelid motions, such as overlong closure, high blinking frequency, low closing speed and weak gazing strength, and may hopefully provide feedback for assessing eye fatigue in time so that unexpected situations can be prevented.

  10. Optimized expression and purification of NavAb provide the structural insight into the voltage dependence.

    Science.gov (United States)

    Irie, Katsumasa; Haga, Yukari; Shimomura, Takushi; Fujiyoshi, Yoshinori

    2018-01-01

    Voltage-gated sodium channels are crucial for electro-signalling in living systems. Analysis of the molecular mechanism requires both fine electrophysiological evaluation and high-resolution channel structures. Here, we optimized a dual expression system of NavAb, which is a well-established standard of prokaryotic voltage-gated sodium channels, for E. coli and insect cells using a single plasmid vector to analyse high-resolution protein structures and measure large ionic currents. Using this expression system, we evaluated the voltage dependence and determined the crystal structures of NavAb wild-type and two mutants, E32Q and N49K, whose voltage dependence were positively shifted and essential interactions were lost in voltage sensor domain. The structural and functional comparison elucidated the molecular mechanisms of the voltage dependence of prokaryotic voltage-gated sodium channels. © 2017 Federation of European Biochemical Societies.

  11. Simulations of depleted CMOS sensors for high-radiation environments

    CERN Document Server

    Liu, J.; Bhat, S.; Breugnon, P.; Caicedo, I.; Chen, Z.; Degerli, Y.; Godiot-Basolo, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Hügging, F.; Krüger, H.; Moustakas, K.; Pangaud, P.; Rozanov, A.; Rymaszewski, P.; Schwemling, P.; Wang, M.; Wang, T.; Wermes, N.; Zhang, L.

    2017-01-01

    After the Phase II upgrade for the Large Hadron Collider (LHC), the increased luminosity requests a new upgraded Inner Tracker (ITk) for the ATLAS experiment. As a possible option for the ATLAS ITk, a new pixel detector based on High Voltage/High Resistivity CMOS (HV/HR CMOS) technology is under study. Meanwhile, a new CMOS pixel sensor is also under development for the tracker of Circular Electron Position Collider (CEPC). In order to explore the sensor electric properties, such as the breakdown voltage and charge collection efficiency, 2D/3D Technology Computer Aided Design (TCAD) simulations have been performed carefully for the above mentioned both of prototypes. In this paper, the guard-ring simulation for a HV/HR CMOS sensor developed for the ATLAS ITk and the charge collection efficiency simulation for a CMOS sensor explored for the CEPC tracker will be discussed in details. Some comparisons between the simulations and the latest measurements will also be addressed.

  12. Coupling between the voltage-sensing and phosphatase domains of Ci-VSP.

    Science.gov (United States)

    Villalba-Galea, Carlos A; Miceli, Francesco; Taglialatela, Maurizio; Bezanilla, Francisco

    2009-07-01

    The Ciona intestinalis voltage sensor-containing phosphatase (Ci-VSP) shares high homology with the phosphatidylinositol phosphatase enzyme known as PTEN (phosphatase and tensin homologue deleted on chromosome 10). We have taken advantage of the similarity between these proteins to inquire about the coupling between the voltage sensing and the phosphatase domains in Ci-VSP. Recently, it was shown that four basic residues (R11, K13, R14, and R15) in PTEN are critical for its binding onto the membrane, required for its catalytic activity. Ci-VSP has three of the basic residues of PTEN. Here, we show that when R253 and R254 (which are the homologues of R14 and R15 in PTEN) are mutated to alanines in Ci-VSP, phosphatase activity is disrupted, as revealed by a lack of effect on the ionic currents of KCNQ2/3, where current decrease is a measure of phosphatase activity. The enzymatic activity was not rescued by the introduction of lysines, indicating that the binding is an arginine-specific interaction between the phosphatase binding domain and the membrane, presumably through the phosphate groups of the phospholipids. We also found that the kinetics and steady-state voltage dependence of the S4 segment movement are affected when the arginines are not present, indicating that the interaction of R253 and R254 with the membrane, required for the catalytic action of the phosphatase, restricts the movement of the voltage sensor.

  13. A remotely interrogatable sensor for chemical monitoring

    Science.gov (United States)

    Stoyanov, P. G.; Doherty, S. A.; Grimes, C. A.; Seitz, W. R.

    1998-01-01

    A new type of continuously operating, in-situ, remotely monitored sensor is presented. The sensor is comprised of a thin film array of magnetostatically coupled, magnetically soft ferromagnetic thin film structures, adhered to or encased within a thin polymer layer. The polymer is made so that it swells or shrinks in response to the chemical analyte of interest, which in this case is pH. As the polymer swells or shrinks, the magnetostatic coupling between the magnetic elements changes, resulting in changes in the magnetic switching characteristics of the sensor. Placed within a sinusoidal magnetic field the magnetization vector of the coupled sensor elements periodically reverses directions, generating magnetic flux that can be remotely detected as a series of voltage spikes in appropriately placed pickup coils. one preliminary sensor design consists of four triangles, initially spaced approximately 50 micrometers apart, arranged to form a 12 mm x 12 mm square with the triangle tips centered at a common origin. Our preliminary work has focused on monitoring of pH using a lightly crosslinked pH sensitive polymer layer of hydroxyethylmethacrylate and 2-(dimethylamino) ethylmethacrylate. As the polymer swells or shrinks the magnetostatic coupling between the triangles changes, resulting in measurable changes in the amplitude of the detected voltage spirits.

  14. A high Tc superconducting liquid nitrogen level sensor

    International Nuclear Information System (INIS)

    Jin, J. X.; Liu, H. K.; Dou, S. X.; Grantham, C.; Beer, J.

    1996-01-01

    Full text: The dramatic resistance change in the superconducting-normal transition temperature range enables a high T c superconductor to be considered for designing a liquid nitrogen level sensor. A (Bi,Pb) 2 Sr 2 Ca 2 Cu 3 O 10+x Ag clad superconducting wire is selected and tested as a continuous liquid nitrogen level sensor to investigate the possibility for this application. The (Bi,Pb) 2 Sr 2 Ca 2 Cu 3 O 10+x Ag clad superconducting wire has approximately 110 K critical temperature, with more flexible and stable properties compared with bulk shape ceramic high T c superconductors. The voltage drops across the sensor are tested with different immersion lengths in liquid nitrogen. The accuracy of the HTS sensor is analysed with its dR/dT in the superconducting-normal transition range. The voltage signal is sensitive to liquid nitrogen level change, and this signal can be optimized by controlling the transport current. The problems of the Ag clad superconductor are that the Ag sheath thermal conductivity is very high, and the sensor normal resistance is low. These are the main disadvantages for using such a wire as a continuous level sensor. However, a satisfactory accuracy can be achieved by control of the transport current. A different configuration of the wire sensor is also designed to avoid this thermal influence

  15. Magnetostrictive-piezoelectric magnetic sensor with current excitation

    International Nuclear Information System (INIS)

    Prieto, J.L.; Aroca, C.; Lopez, E.; Sanchez, M.C.; Sanchez, P.

    2000-01-01

    A new working configuration for magnetostrictive-piezoelectric magnetic sensors is presented. In this configuration, the excitation is caused using an electrical current flowing through the ferromagnetic sample and the induced signal is sensed in the piezoelectric support as an electrical voltage. This new idea allows a magnetic field detection without any coil and opens a possibility for a future miniaturisation of the sensor

  16. Optically Defined Modal Sensors Incorporating Spiropyran-Doped Liquid Crystals with Piezoelectric Sensors

    Directory of Open Access Journals (Sweden)

    Hui-Lung Kuo

    2011-01-01

    Full Text Available We integrated a piezoelectric sensing layer lamina containing liquid crystals (LC and spiropyran (SP in a LC/SP mixture to create an optically reconfigurable modal sensor for a cantilever beam. The impedance of this LC/SP lamina was decreased by UV irradiation which constituted the underlying mechanism to modulate the voltage externally applied to the piezoelectric actuating layer. Illuminating a specific pattern onto the LC/SP lamina provided us with a way to spatially modulate the piezoelectric vibration signal. We showed that if an UV illuminated pattern matches the strain distribution of a specific mode, a piezoelectric modal sensor can be created. Since UV illumination can be changed in situ in real-time, our results confirm for the first time since the inception of smart sensors, that an optically tailored modal sensor can be created. Some potential applications of this type of sensor include energy harvesting devices, bio-chips, vibration sensing and actuating devices.

  17. Study of photoconductor-based radiological image sensors

    International Nuclear Information System (INIS)

    Beaumont, Francois

    1989-01-01

    Because of the evolution of medical imaging techniques to digital Systems, it is necessary to replace radiological film which has many drawbacks, by a detector quite as efficient and quickly giving a digitizable signal. The purpose of this thesis is to find new X-ray digital imaging processes using photoconductor materials such as amorphous selenium. After reviewing the principle of direct radiology and functions to be served by the X-ray sensor (i.e. detection, memory, assignment, visualization), we explain specification. We especially show the constraints due to the object to be radiographed (condition of minimal exposure), and to the reading signal (electronic noise detection associated with a reading frequency). As a result of this study, a first photoconductor sensor could be designed. Its principle is based on photo-carrier trapping at dielectric-photoconductor structure interface. The reading System needs the scanning of a laser beam upon the sensor surface. The dielectric-photoconductor structure enabled us to estimate the possibilities offered by the sensor and to build a complete x-ray imaging System. The originality of thermo-dielectric sensor, that was next studied, is to allow a thermal assignment reading. The chosen System consists in varying the ferroelectric polymer capacity whose dielectric permittivity is weak at room temperature. The thermo-dielectric material was studied by thermal or Joule effect stimulation. During our experiments, trapping was found in a sensor made of amorphous selenium between two electrodes. This new effect was performed and enabled us to expose a first interpretation. Eventually, the comparison of these new sensor concepts with radiological film shows the advantage of the proposed solution. (author) [fr

  18. Numerical simulation and design of a fluxset sensor by finite element method

    Energy Technology Data Exchange (ETDEWEB)

    Preis, K.; Bardi, I.; Biro, O.; Richter, K.R. [Technical Univ. of Graz (Austria); Pavo, J. [Technical Univ. of Budapest (Hungary); Gasparics, A. [Research Inst. for Material Science, Budapest (Hungary); Ticar, I. [Univ. of Maribor (Slovenia)

    1998-09-01

    A 3D model of a fluxset sensor serving to measure magnetic fields arising in Eddy Current Nondestructive Testing applications is analyzed by the finite element method. The voltage induced in the pick-up coil is obtained by computing the flux of the core of the sensor for several values of the exciting current at various external fields. It is shown that the time shift of the ensuing voltage impulse depends linearly on the external field in a wide range. The behavior of the sensor is furthermore simulated in a real nondestructive testing arrangement consisting of an exciting coil located above a conducting plate with a crack.

  19. Gas stream analysis using voltage-current time differential operation of electrochemical sensors

    Science.gov (United States)

    Woo, Leta Yar-Li; Glass, Robert Scott; Fitzpatrick, Joseph Jay; Wang, Gangqiang; Henderson, Brett Tamatea; Lourdhusamy, Anthoniraj; Steppan, James John; Allmendinger, Klaus Karl

    2018-01-02

    A method for analysis of a gas stream. The method includes identifying an affected region of an affected waveform signal corresponding to at least one characteristic of the gas stream. The method also includes calculating a voltage-current time differential between the affected region of the affected waveform signal and a corresponding region of an original waveform signal. The affected region and the corresponding region of the waveform signals have a sensitivity specific to the at least one characteristic of the gas stream. The method also includes generating a value for the at least one characteristic of the gas stream based on the calculated voltage-current time differential.

  20. Electronic relaxation of deep bulk trap and interface state in ZnO ceramics

    International Nuclear Information System (INIS)

    Yang Yan; Li Sheng-Tao; Ding Can; Cheng Peng-Fei

    2011-01-01

    This paper investigates the electronic relaxation of deep bulk trap and interface state in ZnO ceramics based on dielectric spectra measured in a wide range of temperature, frequency and bias, in addition to the steady state response. It discusses the nature of net current flowing over the barrier affected by interface state, and then obtains temperature-dependent barrier height by approximate calculation from steady I—V (current—voltage) characteristics. Additional conductance and capacitance arising from deep bulk trap relaxation are calculated based on the displacement of the cross point between deep bulk trap and Fermi level under small AC signal. From the resonances due to deep bulk trap relaxation on dielectric spectra, the activation energies are obtained as 0.22 eV and 0.35 eV, which are consistent with the electronic levels of the main defect interstitial Zn and vacancy oxygen in the depletion layer. Under moderate bias, another resonance due to interface relaxation is shown on the dielectric spectra. The DC-like conductance is also observed in high temperature region on dielectric spectra, and the activation energy is much smaller than the barrier height in steady state condition, which is attributed to the displacement current coming from the shallow bulk trap relaxation or other factors. (fluids, plasmas and electric discharges)

  1. Quality assurance and irradiation studies on CMS silicon strip sensors

    CERN Document Server

    Furgeri, Alexander

    The high luminosity at the Large Hadron Collider at the European Particle Physics Laboratory CERN in Geneva causes a harsh radiation environment for the detectors. The most inner layers of the tracker are irradiated to an equivalent fluence of 1.6e14 1MeV-neutrons per cmˆ2. The radiation causes damage in the silicon lattice of the sensors. This increases the leakage current and changes the full depletion voltage. Both of these parameters are after irradiation neither stable with time nor with temperatures above 0oC. This thesis presents the changes of the leakage currents, the full depletion voltages, and all strip parameters of the sensors after proton and neutron irradiation. After irradiation annealing studies have been carried out. All observed effects are used to simulate the evolution of full depletion voltage for different annealing times and annealing temperatures in order to keep the power consumption as low as possible. From the observed radiation damage and annealing effects the sensors of the tra...

  2. High reliable and stable organic field-effect transistor nonvolatile memory with a poly(4-vinyl phenol) charge trapping layer based on a pn-heterojunction active layer

    Energy Technology Data Exchange (ETDEWEB)

    Xiang, Lanyi; Ying, Jun; Han, Jinhua; Zhang, Letian, E-mail: zlt@jlu.edu.cn, E-mail: wwei99@jlu.edu.cn; Wang, Wei, E-mail: zlt@jlu.edu.cn, E-mail: wwei99@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2016-04-25

    In this letter, we demonstrate a high reliable and stable organic field-effect transistor (OFET) based nonvolatile memory (NVM) with a polymer poly(4-vinyl phenol) (PVP) as the charge trapping layer. In the unipolar OFETs, the inreversible shifts of the turn-on voltage (V{sub on}) and severe degradation of the memory window (ΔV{sub on}) at programming (P) and erasing (E) voltages, respectively, block their application in NVMs. The obstacle is overcome by using a pn-heterojunction as the active layer in the OFET memory, which supplied a holes and electrons accumulating channel at the supplied P and E voltages, respectively. Both holes and electrons transferring from the channels to PVP layer and overwriting the trapped charges with an opposite polarity result in the reliable bidirectional shifts of V{sub on} at P and E voltages, respectively. The heterojunction OFET exhibits excellent nonvolatile memory characteristics, with a large ΔV{sub on} of 8.5 V, desired reading (R) voltage at 0 V, reliable P/R/E/R dynamic endurance over 100 cycles and a long retention time over 10 years.

  3. Graphene-quantum-dot nonvolatile charge-trap flash memories

    International Nuclear Information System (INIS)

    Sin Joo, Soong; Kim, Jungkil; Seok Kang, Soo; Kim, Sung; Choi, Suk-Ho; Won Hwang, Sung

    2014-01-01

    Nonvolatile flash-memory capacitors containing graphene quantum dots (GQDs) of 6, 12, and 27 nm average sizes (d) between SiO 2 layers for use as charge traps have been prepared by sequential processes: ion-beam sputtering deposition (IBSD) of 10 nm SiO 2 on a p-type wafer, spin-coating of GQDs on the SiO 2 layer, and IBSD of 20 nm SiO 2 on the GQD layer. The presence of almost a single array of GQDs at a distance of ∼13 nm from the SiO 2 /Si wafer interface is confirmed by transmission electron microscopy and photoluminescence. The memory window estimated by capacitance–voltage curves is proportional to d for sweep voltages wider than  ± 3 V, and for d = 27 nm the GQD memories show a maximum memory window of 8 V at a sweep voltage of  ± 10 V. The program and erase speeds are largest at d = 12 and 27 nm, respectively, and the endurance and data-retention properties are the best at d = 27 nm. These memory behaviors can be attributed to combined effects of edge state and quantum confinement. (papers)

  4. Image sensor system with bio-inspired efficient coding and adaptation.

    Science.gov (United States)

    Okuno, Hirotsugu; Yagi, Tetsuya

    2012-08-01

    We designed and implemented an image sensor system equipped with three bio-inspired coding and adaptation strategies: logarithmic transform, local average subtraction, and feedback gain control. The system comprises a field-programmable gate array (FPGA), a resistive network, and active pixel sensors (APS), whose light intensity-voltage characteristics are controllable. The system employs multiple time-varying reset voltage signals for APS in order to realize multiple logarithmic intensity-voltage characteristics, which are controlled so that the entropy of the output image is maximized. The system also employs local average subtraction and gain control in order to obtain images with an appropriate contrast. The local average is calculated by the resistive network instantaneously. The designed system was successfully used to obtain appropriate images of objects that were subjected to large changes in illumination.

  5. Self-powered wireless disposable sensor for welfare application.

    Science.gov (United States)

    Douseki, Takakuni; Tanaka, Ami

    2013-01-01

    A self-powered urinary incontinence sensor consisting of a flexible urine-activated battery and a wireless transmitter has been developed as an application for wireless biosensor networks. The flexible urine-activated battery is embedded in a disposal diaper and makes possible both the sensing of urine leakage and self-powered operation. An intermittent power-supply circuit that uses an electric double-layer capacitor (EDLC) with a small internal resistance suppresses the supply voltage drop due to the large internal resistance of the battery. This circuit supplies the power to a wireless transmitter. A 315-MHz-band wireless transmitter performs low-power operation. To verify the effectiveness of the circuit scheme, we fabricated a prototype sensor system. When 80 cc of urine is poured onto the diaper, the battery outputs a voltage of 1 V; and the sensor can transmit an ID signal over a distance of 5 m.

  6. High voltage disconnect switch position monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Crampton, S W

    1983-08-01

    Unreliable position indication on high-voltage (HV) disconnect switches can result in equipment damage worth many times the cost of a disconnect switch. The benefits and limitations of a number of possible methods of reliably monitoring HV disconnect switches are assessed. Several methods of powering active devices at HV are noted. It is concluded that the most reliable way of monitoring switch position at reasonable cost would use a passive hermetically-sealed blade-position sensor located at HV, with a fibre-optic link between HV and ground. Separate sensors would be used for open and closed position indication. For maximum reliability the fibre-optic link would continue into the relay building. A passive magnetically actuated fibre-optic sensor has been built which demonstrates the feasibility of the concept. The sensor monitors blade position relative to the jaws in three dimensions with high resolution. A design for an improved passive magneto-optic sensor has significantly lower optical losses, allowing a single fibre-optic loop and 3 sensors to monitor closure of all phases of a disconnect switch. A similar loop would monitor switch opening. The improved sensor has a solid copper housing to provide greater immunity to fault currents, and to protect it from the environment and from physical damage. Two methods of providing a protected path for fibre-optics passing from HV to ground are proposed, one using a hollow porcelain switch-support insulator and the other using an additional small-diameter polymer insulator with optical fibres imbedded in its fibreglass core. A number of improvements are recommended which can be made to existing switches to increase their reliability. 16 refs., 13 figs., 1 tab.

  7. Calibration of ultra-high frequency (UHF) partial discharge sensors using FDTD method

    Science.gov (United States)

    Ishak, Asnor Mazuan; Ishak, Mohd Taufiq

    2018-02-01

    Ultra-high frequency (UHF) partial discharge sensors are widely used for conditioning monitoring and defect location in insulation system of high voltage equipment. Designing sensors for specific applications often requires an iterative process of manufacturing, testing and mechanical modifications. This paper demonstrates the use of finite-difference time-domain (FDTD) technique as a tool to predict the frequency response of UHF PD sensors. Using this approach, the design process can be simplified and parametric studies can be conducted in order to assess the influence of component dimensions and material properties on the sensor response. The modelling approach is validated using gigahertz transverse electromagnetic (GTEM) calibration system. The use of a transient excitation source is particularly suitable for modeling using FDTD, which is able to simulate the step response output voltage of the sensor from which the frequency response is obtained using the same post-processing applied to the physical measurement.

  8. A VDF/TrFE copolymer on silicon pyroelectric sensor: design considerations and experiments

    NARCIS (Netherlands)

    Setiadi, D.; Setiadi, D.; Regtien, Paulus P.L.

    1995-01-01

    For an optimal design of a VDF/TrFE (vinylidene fluoride trifluoroethylene) copolymer-on-silicon pyroelectric sensor, the one-dimensional diffusion equation is solved for the pyroelectric multilayer structure. Output current and voltage of the sensor are calculated. Improvement of the sensor can be

  9. CVD-Graphene-Based Flexible, Thermoelectrochromic Sensor

    Directory of Open Access Journals (Sweden)

    Adam Januszko

    2017-01-01

    Full Text Available The main idea behind this work was demonstrated in a form of a new thermoelectrochromic sensor on a flexible substrate using graphene as an electrically reconfigurable thermal medium (TEChrom™. Our approach relies on electromodulation of thermal properties of graphene on poly(ethylene terephthalate (PET via mechanical destruction of a graphene layer. Graphene applied in this work was obtained by chemical vapor deposition (CVD technique on copper substrate and characterized by Raman and scanning tunneling spectroscopy. Electrical parameters of graphene were evaluated by the van der Pauw method on the transferred graphene layers onto SiO2 substrates by electrochemical delamination method. Two configurations of architecture of sensors, without and with the thermochromic layer, were investigated, taking into account the increase of voltage from 0 to 50 V and were observed by thermographic camera to define heat energy. Current-voltage characteristics obtained for the sensor with damaged graphene layer are linear, and the resistivity is independent from the current applied. The device investigated under 1000 W/m2 exhibited rise of resistivity along with increased temperature. Flexible thermoelectrochromic device with graphene presented here can be widely used as a sensor for both the military and civil monitoring.

  10. CRUQS: A Miniature Fine Sun Sensor for Nanosatellites

    Science.gov (United States)

    Heatwole, Scott; Snow, Carl; Santos, Luis

    2013-01-01

    A new miniature fine Sun sensor has been developed that uses a quadrant photodiode and housing to determine the Sun vector. Its size, mass, and power make it especially suited to small satellite applications, especially nanosatellites. Its accuracy is on the order of one arcminute, and it will enable new science in the area of nanosatellites. The motivation for this innovation was the need for high-performance Sun sensors in the nanosatellite category. The design idea comes out of the LISS (Lockheed Intermediate Sun Sensor) used by the sounding rocket program on their solar pointing ACS (Attitude Control System). This system uses photodiodes and a wall between them. The shadow cast by the Sun is used to determine the Sun angle. The new sensor takes this concept and miniaturizes it. A cruciform shaped housing and a surface-mount quadrant photodiode package allow for a two-axis fine Sun sensor to be packaged into a space approx.1.25xl x0.25 in. (approx.3.2x2.5x0.6 cm). The circuitry to read the photodiodes is a simple trans-impedance operational amplifier. This is much less complex than current small Sun sensors for nanosatellites that rely on photo-arrays and processing of images to determine the Sun center. The simplicity of the circuit allows for a low power draw as well. The sensor consists of housing with a cruciform machined in it. The cruciform walls are 0.5-mm thick and the center of the cruciform is situated over the center of the quadrant photodiode sensor. This allows for shadows to be cast on each of the four photodiodes based on the angle of the Sun. A simple operational amplifier circuit is used to read the output of the photodiodes as a voltage. The voltage output of each photodiode is summed based on rows and columns, and then the values of both rows or both columns are differenced and divided by the sum of the voltages for all four photodiodes. The value of both difference over sums for the rows and columns is compared to a table or a polynomial fit

  11. Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements

    CERN Document Server

    Chiochia, Vincenzo; Bortoletto, Daniela; Cremaldi, Lucien; Cucciarelli, Susanna; Dorokhov, Andrei; Hoermann, Christoph; Kim, Dongwook; Konecki, Marcin; Kotlinski, Danek; Prokofiev, Kirill; Regenfus, Christian; Rohe, Tilman; Sanders, David A.; Son, Seunghee; Speer, Thomas; Chiochia, Vincenzo; Swartz, Morris; Bortoletto, Daniela; Cremaldi, Lucien; Cucciarelli, Susanna; Dorokhov, Andrei; Hoermann, Christoph; Kim, Dongwook; Konecki, Marcin; Kotlinski, Danek; Prokofiev, Kirill; Regenfus, Christian; Rohe, Tilman; Sanders, David A.; Son, Seunghee; Speer, Thomas

    2004-01-01

    Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.

  12. MFTF sensor verification computer program

    International Nuclear Information System (INIS)

    Chow, H.K.

    1984-01-01

    The design, requirements document and implementation of the MFE Sensor Verification System were accomplished by the Measurement Engineering Section (MES), a group which provides instrumentation for the MFTF magnet diagnostics. The sensors, installed on and around the magnets and solenoids, housed in a vacuum chamber, will supply information about the temperature, strain, pressure, liquid helium level and magnet voltage to the facility operator for evaluation. As the sensors are installed, records must be maintained as to their initial resistance values. Also, as the work progresses, monthly checks will be made to insure continued sensor health. Finally, after the MFTF-B demonstration, yearly checks will be performed as well as checks of sensors as problem develops. The software to acquire and store the data was written by Harry Chow, Computations Department. The acquired data will be transferred to the MFE data base computer system

  13. Electric field deformation in diamond sensors induced by radiation defects

    Energy Technology Data Exchange (ETDEWEB)

    Kassel, Florian; Boer, Wim de; Boegelspacher, Felix; Dierlamm, Alexander; Mueller, Thomas; Steck, Pia [Institut fuer Experimentelle Kernphysik (IEKP), Karlsruher Institut fuer Technologie (KIT) (Germany); Dabrowski, Anne; Guthoff, Moritz [CERN (Switzerland)

    2016-07-01

    The BCML system is a beam monitoring device in the CMS experiment at the LHC. As detectors 32 poly-crystalline CVD diamond sensors are positioned in a ring around the beam pipe at a distance of ±1.8 m and ±14.4 m from the interaction point. The radiation hardness of the diamond sensors in terms of measured signal during operation was significantly lower than expected from laboratory measurements. At high particle rates, such as those occurring during the operation of the LHC, a significant fraction of the defects act as traps for charge carriers. This space charge modifies the electrical field in the sensor bulk leading to a reduction of the charge collection efficiency (CCE). A diamond irradiation campaign was started to investigate the rate dependent electrical field deformation with respect to the radiation damage. Besides the electrical field measurements via the Transient Current Technique, the CCE was measured. The experimental results were used to create an effective trap model that takes the radiation damage into account. Using this trap model the rate dependent electrical field deformation and the CCE were simulated with the software ''SILVACO TCAD''. This talk compares the experimental measurement results with the simulations.

  14. Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories

    Directory of Open Access Journals (Sweden)

    Nenad Novkovski

    2018-01-01

    Full Text Available Method for characterization of electrical and trapping properties of multilayered high permittivity stacks for use in charge trapping flash memories is proposed. Application of the method to the case of multilayered HfO2/Al2O3 stacks is presented. By applying our previously developed comprehensive model for MOS structures containing high-κ dielectrics on the J-V characteristics measured in the voltage range without marked degradation and charge trapping (from −3 V to +3 V, several parameters of the structure connected to the interfacial layer and the conduction mechanisms have been extracted. We found that the above analysis gives precise information on the main characteristics and the quality of the injection layer. C-V characteristics of stressed (with write and erase pulses structures recorded in a limited range of voltages between −1 V and +1 V (where neither significant charge trapping nor visible degradation of the structures is expected to occur were used in order to provide measures of the effect of stresses with no influence of the measurement process. Both trapped charge and the distribution of interface states have been determined using modified Terman method for fresh structures and for structures stressed with write and erase cycles. The proposed method allows determination of charge trapping and interface state with high resolution, promising a precise characterization of multilayered high permittivity stacks for use in charge trapping flash memories.

  15. Structure of Voltage-gated Two-pore Channel TPC1 from Arabidopsis thaliana

    Science.gov (United States)

    Guo, Jiangtao; Zeng, Weizhong; Chen, Qingfeng; Lee, Changkeun; Chen, Liping; Yang, Yi; Cang, Chunlei; Ren, Dejian; Jiang, Youxing

    2015-01-01

    Two-pore channels (TPCs) contain two copies of a Shaker-like six-transmembrane (6-TM) domain in each subunit and are ubiquitously expressed in both animals and plants as organellar cation channels. Here, we present the first crystal structure of a vacuolar two-pore channel from Arabidopsis thaliana, AtTPC1, which functions as a homodimer. AtTPC1 activation requires both voltage and cytosolic Ca2+. Ca2+ binding to the cytosolic EF-hand domain triggers conformational changes coupled to the pair of pore-lining inner helices (IS6 helices) from the first 6-TM domains, whereas membrane potential only activates the second voltage-sensing domain (VSD2) whose conformational changes are coupled to the pair of inner helices (IIS6 helices) from the second 6-TM domains. Luminal Ca2+ or Ba2+ can modulate voltage activation by stabilizing VSD2 in the resting state and shifts voltage activation towards more positive potentials. Our Ba2+ bound AtTPC1 structure reveals a voltage sensor in the resting state, providing hitherto unseen structural insight into the general voltage-gating mechanism among voltage-gated channels. PMID:26689363

  16. Piezoelectric Active Humidity Sensors Based on Lead-Free NaNbO3 Piezoelectric Nanofibers

    Directory of Open Access Journals (Sweden)

    Li Gu

    2016-06-01

    Full Text Available The development of micro-/nano-scaled energy harvesters and the self-powered sensor system has attracted great attention due to the miniaturization and integration of the micro-device. In this work, lead-free NaNbO3 piezoelectric nanofibers with a monoclinic perovskite structure were synthesized by the far-field electrospinning method. The flexible active humidity sensors were fabricated by transferring the nanofibers from silicon to a soft polymer substrate. The sensors exhibited outstanding piezoelectric energy-harvesting performance with output voltage up to 2 V during the vibration process. The output voltage generated by the NaNbO3 sensors exhibited a negative correlation with the environmental humidity varying from 5% to 80%, where the peak-to-peak value of the output voltage generated by the sensors decreased from 0.40 to 0.07 V. The sensor also exhibited a short response time, good selectively against ethanol steam, and great temperature stability. The piezoelectric active humidity sensing property could be attributed to the increased leakage current in the NaNbO3 nanofibers, which was generated due to proton hopping among the H3O+ groups in the absorbed H2O layers under the driving force of the piezoelectric potential.

  17. Study on quench detection of the KSTAR CS coil with CDA+MIK compensation of inductive voltages

    Energy Technology Data Exchange (ETDEWEB)

    An, Seok Chan; Kim, Jin Sub [Yonsei University, Seoul (Korea, Republic of); Chu, Yong [National Fusion Research Institute(NFRI), Daejeon (Korea, Republic of)

    2016-03-15

    Quench Detection System (QDS) is essential to guarantee the stable operation of the Korea Superconducting Tokamak Advanced Research (KSTAR) Poloidal Field (PF) magnet system because the stored energy in the magnet system is very large. For the fast response, voltage-based QDS has been used. Co-wound voltage sensors and balanced bridge circuits were applied to eliminate the inductive voltages generated during the plasma operation. However, as the inductive voltages are hundreds times higher than the quench detection voltage during the pulse-current operation, Central Difference Averaging (CDA) and MIK, where I and K stand for mutual coupling indexes of different circuits, which is an active cancellation of mutually generated voltages have been suggested and studied. In this paper, the CDA and MIK technique were applied to the KSTAR magnet for PF magnet quench detection. The calculated inductive voltages from the MIK and measured voltages from the CDA circuits were compared to eliminate the inductive voltages at result signals.

  18. Study on quench detection of the KSTAR CS coil with CDA+MIK compensation of inductive voltages

    International Nuclear Information System (INIS)

    An, Seok Chan; Kim, Jin Sub; Chu, Yong

    2016-01-01

    Quench Detection System (QDS) is essential to guarantee the stable operation of the Korea Superconducting Tokamak Advanced Research (KSTAR) Poloidal Field (PF) magnet system because the stored energy in the magnet system is very large. For the fast response, voltage-based QDS has been used. Co-wound voltage sensors and balanced bridge circuits were applied to eliminate the inductive voltages generated during the plasma operation. However, as the inductive voltages are hundreds times higher than the quench detection voltage during the pulse-current operation, Central Difference Averaging (CDA) and MIK, where I and K stand for mutual coupling indexes of different circuits, which is an active cancellation of mutually generated voltages have been suggested and studied. In this paper, the CDA and MIK technique were applied to the KSTAR magnet for PF magnet quench detection. The calculated inductive voltages from the MIK and measured voltages from the CDA circuits were compared to eliminate the inductive voltages at result signals

  19. A Photostable Silicon Rhodamine Platform for Optical Voltage Sensing

    Science.gov (United States)

    Huang, Yi-Lin; Walker, Alison S.; Miller, Evan W.

    2015-01-01

    This paper describes the design and synthesis of a photostable, far-red to near-infrared (NIR) platform for optical voltage sensing. We developed a new, sulfonated silicon rhodamine fluorophore and integrated it with a phenylenevinylene molecular wire to create a Berkeley Red Sensor of Transmembrane potential, or BeRST 1 (“burst”). BeRST 1 is the first member of a class of farred to NIR voltage sensitive dyes that make use of a photoinduced electron transfer (PeT) trigger for optical interrogation of membrane voltage. We show that BeRST 1 displays bright, membrane-localized fluorescence in living cells, high photostability, and excellent voltage sensitivity in neurons. Depolarization of the plasma membrane results in rapid fluorescence increases (24% ΔF/F per 100 mV). BeRST 1 can be used in conjunction with fluorescent stains for organelles, Ca2+ indicators, and voltage-sensitive fluorescent proteins. In addition, the red-shifted spectral profile of BeRST 1, relative to commonly employed optogenetic actuators like ChannelRhodopsin2 (ChR2), which require blue light, enables optical electrophysiology in neurons. The high speed, sensitivity, photostability and long-wavelength fluorescence profiles of BeRST 1 make it a useful platform for the non-invasive, optical dissection of neuronal activity. PMID:26237573

  20. Development of N+ in P pixel sensors for a high-luminosity large hadron collider

    Science.gov (United States)

    Kamada, Shintaro; Yamamura, Kazuhisa; Unno, Yoshinobu; Ikegami, Yoichi

    2014-11-01

    Hamamatsu Photonics K. K. is developing an N+ in a p planar pixel sensor with high radiation tolerance for the high-luminosity large hadron collider (HL-LHC). The N+ in the p planar pixel sensor is a candidate for the HL-LHC and offers the advantages of high radiation tolerance at a reasonable price compared with the N+ in an n planar sensor, the three-dimensional sensor, and the diamond sensor. However, the N+ in the p planar pixel sensor still presents some problems that need to be solved, such as its slim edge and the danger of sparks between the sensor and readout integrated circuit. We are now attempting to solve these problems with wafer-level processes, which is important for mass production. To date, we have obtained a 250-μm edge with an applied bias voltage of 1000 V. To protect against high-voltage sparks from the edge, we suggest some possible designs for the N+ edge.

  1. Contribution of S4 segments and S4-S5 linkers to the low-voltage activation properties of T-type CaV3.3 channels.

    Directory of Open Access Journals (Sweden)

    Ana Laura Sanchez-Sandoval

    Full Text Available Voltage-gated calcium channels contain four highly conserved transmembrane helices known as S4 segments that exhibit a positively charged residue every third position, and play the role of voltage sensing. Nonetheless, the activation range between high-voltage (HVA and low-voltage (LVA activated calcium channels is around 30-40 mV apart, despite the high level of amino acid similarity within their S4 segments. To investigate the contribution of S4 voltage sensors for the low-voltage activation characteristics of CaV3.3 channels we constructed chimeras by swapping S4 segments between this LVA channel and the HVA CaV1.2 channel. The substitution of S4 segment of Domain II in CaV3.3 by that of CaV1.2 (chimera IIS4C induced a ~35 mV shift in the voltage-dependence of activation towards positive potentials, showing an I-V curve that almost overlaps with that of CaV1.2 channel. This HVA behavior induced by IIS4C chimera was accompanied by a 2-fold decrease in the voltage-dependence of channel gating. The IVS4 segment had also a strong effect in the voltage sensing of activation, while substitution of segments IS4 and IIIS4 moved the activation curve of CaV3.3 to more negative potentials. Swapping of IIS4 voltage sensor influenced additional properties of this channel such as steady-state inactivation, current decay, and deactivation. Notably, Domain I voltage sensor played a major role in preventing CaV3.3 channels to inactivate from closed states at extreme hyperpolarized potentials. Finally, site-directed mutagenesis in the CaV3.3 channel revealed a partial contribution of the S4-S5 linker of Domain II to LVA behavior, with synergic effects observed in double and triple mutations. These findings indicate that IIS4 and, to a lesser degree IVS4, voltage sensors are crucial in determining the LVA properties of CaV3.3 channels, although the accomplishment of this function involves the participation of other structural elements like S4-S5 linkers.

  2. Contribution of S4 segments and S4-S5 linkers to the low-voltage activation properties of T-type CaV3.3 channels

    Science.gov (United States)

    Sanchez-Sandoval, Ana Laura; Herrera Carrillo, Zazil; Díaz Velásquez, Clara Estela; Delgadillo, Dulce María; Rivera, Heriberto Manuel

    2018-01-01

    Voltage-gated calcium channels contain four highly conserved transmembrane helices known as S4 segments that exhibit a positively charged residue every third position, and play the role of voltage sensing. Nonetheless, the activation range between high-voltage (HVA) and low-voltage (LVA) activated calcium channels is around 30–40 mV apart, despite the high level of amino acid similarity within their S4 segments. To investigate the contribution of S4 voltage sensors for the low-voltage activation characteristics of CaV3.3 channels we constructed chimeras by swapping S4 segments between this LVA channel and the HVA CaV1.2 channel. The substitution of S4 segment of Domain II in CaV3.3 by that of CaV1.2 (chimera IIS4C) induced a ~35 mV shift in the voltage-dependence of activation towards positive potentials, showing an I-V curve that almost overlaps with that of CaV1.2 channel. This HVA behavior induced by IIS4C chimera was accompanied by a 2-fold decrease in the voltage-dependence of channel gating. The IVS4 segment had also a strong effect in the voltage sensing of activation, while substitution of segments IS4 and IIIS4 moved the activation curve of CaV3.3 to more negative potentials. Swapping of IIS4 voltage sensor influenced additional properties of this channel such as steady-state inactivation, current decay, and deactivation. Notably, Domain I voltage sensor played a major role in preventing CaV3.3 channels to inactivate from closed states at extreme hyperpolarized potentials. Finally, site-directed mutagenesis in the CaV3.3 channel revealed a partial contribution of the S4-S5 linker of Domain II to LVA behavior, with synergic effects observed in double and triple mutations. These findings indicate that IIS4 and, to a lesser degree IVS4, voltage sensors are crucial in determining the LVA properties of CaV3.3 channels, although the accomplishment of this function involves the participation of other structural elements like S4-S5 linkers. PMID:29474447

  3. Contribution of S4 segments and S4-S5 linkers to the low-voltage activation properties of T-type CaV3.3 channels.

    Science.gov (United States)

    Sanchez-Sandoval, Ana Laura; Herrera Carrillo, Zazil; Díaz Velásquez, Clara Estela; Delgadillo, Dulce María; Rivera, Heriberto Manuel; Gomora, Juan Carlos

    2018-01-01

    Voltage-gated calcium channels contain four highly conserved transmembrane helices known as S4 segments that exhibit a positively charged residue every third position, and play the role of voltage sensing. Nonetheless, the activation range between high-voltage (HVA) and low-voltage (LVA) activated calcium channels is around 30-40 mV apart, despite the high level of amino acid similarity within their S4 segments. To investigate the contribution of S4 voltage sensors for the low-voltage activation characteristics of CaV3.3 channels we constructed chimeras by swapping S4 segments between this LVA channel and the HVA CaV1.2 channel. The substitution of S4 segment of Domain II in CaV3.3 by that of CaV1.2 (chimera IIS4C) induced a ~35 mV shift in the voltage-dependence of activation towards positive potentials, showing an I-V curve that almost overlaps with that of CaV1.2 channel. This HVA behavior induced by IIS4C chimera was accompanied by a 2-fold decrease in the voltage-dependence of channel gating. The IVS4 segment had also a strong effect in the voltage sensing of activation, while substitution of segments IS4 and IIIS4 moved the activation curve of CaV3.3 to more negative potentials. Swapping of IIS4 voltage sensor influenced additional properties of this channel such as steady-state inactivation, current decay, and deactivation. Notably, Domain I voltage sensor played a major role in preventing CaV3.3 channels to inactivate from closed states at extreme hyperpolarized potentials. Finally, site-directed mutagenesis in the CaV3.3 channel revealed a partial contribution of the S4-S5 linker of Domain II to LVA behavior, with synergic effects observed in double and triple mutations. These findings indicate that IIS4 and, to a lesser degree IVS4, voltage sensors are crucial in determining the LVA properties of CaV3.3 channels, although the accomplishment of this function involves the participation of other structural elements like S4-S5 linkers.

  4. Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

    Science.gov (United States)

    Xu, Huifang; Dai, Yuehua

    2017-02-01

    A two-dimensional analytical model of double-gate (DG) tunneling field-effect transistors (TFETs) with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile, the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate, and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results. Project supported by the National Natural Science Foundation of China (No. 61376106), the University Natural Science Research Key Project of Anhui Province (No. KJ2016A169), and the Introduced Talents Project of Anhui Science and Technology University.

  5. Heat-pump performance: voltage dip/sag, under-voltage and over-voltage

    Directory of Open Access Journals (Sweden)

    William J.B. Heffernan

    2014-12-01

    Full Text Available Reverse cycle air-source heat-pumps are an increasingly significant load in New Zealand and in many other countries. This has raised concern over the impact wide-spread use of heat-pumps may have on the grid. The characteristics of the loads connected to the power system are changing because of heat-pumps. Their performance during under-voltage events such as voltage dips has the potential to compound the event and possibly cause voltage collapse. In this study, results from testing six heat-pumps are presented to assess their performance at various voltages and hence their impact on voltage stability.

  6. Second and third generation voltage-sensitive fluorescent proteins for monitoring membrane potential

    Directory of Open Access Journals (Sweden)

    Amelie Perron

    2009-06-01

    Full Text Available Over the last decade, optical neuroimaging methods have been enriched by engineered biosensors derived from fluorescent protein (FP reporters fused to protein detectors that convert physiological signals into changes of intrinsic FP fluorescence. These FP-based indicators are genetically encoded, and hence targetable to specific cell populations within networks of heterologous cell types. Among this class of biosensors, the development of optical probes for membrane potential is both highly desirable and challenging. A suitable FP voltage sensor would indeed be a valuable tool for monitoring the activity of thousands of individual neurons simultaneously in a non-invasive manner. Previous prototypic genetically-encoded FP voltage indicators achieved a proof of principle but also highlighted several difficulties such as poor cell surface targeting and slow kinetics. Recently, we developed a new series of FRET-based Voltage-Sensitive Fluorescent Proteins (VSFPs, referred to as VSFP2s, with efficient targeting to the plasma membrane and high responsiveness to membrane potential signaling in excitable cells. In addition to these FRET-based voltage sensors, we also generated a third series of probes consisting of single FPs with response kinetics suitable for the optical imaging of fast neuronal signals. These newly available genetically-encoded reporters for membrane potential will be instrumental for future experimental approaches directed toward the understanding of neuronal network dynamics and information processing in the brain. Here, we review the development and current status of these novel fluorescent probes.

  7. Dynamic curvature sensing employing ionic-polymer–metal composite sensors

    International Nuclear Information System (INIS)

    Bahramzadeh, Yousef; Shahinpoor, Mohsen

    2011-01-01

    A dynamic curvature sensor is presented based on ionic-polymer–metal composite (IPMC) for curvature monitoring of deployable/inflatable dynamic space structures. Monitoring the curvature variation is of high importance in various engineering structures including shape monitoring of deployable/inflatable space structures in which the structural boundaries undergo a dynamic deployment process. The high sensitivity of IPMCs to the applied deformations as well as its flexibility make IPMCs a promising candidate for sensing of dynamic curvature changes. Herein, we explore the dynamic response of an IPMC sensor strip with respect to controlled curvature deformations subjected to different forms of input functions. Using a specially designed experimental setup, the voltage recovery effect, phase delay, and rate dependency of the output voltage signal of an IPMC curvature sensor are analyzed. Experimental results show that the IPMC sensor maintains the linearity, sensitivity, and repeatability required for curvature sensing. Besides, in order to describe the dynamic phenomena such as the rate dependency of the IPMC sensor, a chemo-electro-mechanical model based on the Poisson–Nernst–Planck (PNP) equation for the kinetics of ion diffusion is presented. By solving the governing partial differential equations the frequency response of the IPMC sensor is derived. The physical model is able to describe the dynamic properties of the IPMC sensor and the dependency of the signal on rate of excitations

  8. Capacitive MEMS-based sensors : thermo-mechanical stability and charge trapping

    OpenAIRE

    van Essen, M.C.

    2009-01-01

    Micro-Electro Mechanical Systems (MEMS) are generally characterized as miniaturized systems with electrostatically driven moving parts. In many cases, the electrodes are capacitively coupled. This basic scheme allows for a plethora of specifications and functionality. This technology has presently matured and is widely employed in industry. A voltage across the electrodes will attract the movable part. This relation between electric field and separation (or capacitance) can be conveniently em...

  9. E-Beam Effects on CMOS Active Pixel Sensors

    International Nuclear Information System (INIS)

    Kang, Dong Ook; Jo, Gyu Seong; Kim, Hyeon Daek; Kim, Hyunk Taek; Kim, Jong Yeol; Kim, Chan Kyu

    2011-01-01

    Three different CMOS active pixel structures manufactured in a deep submicron process have been evaluated with electron beam. The devices were exposed to 1 MeV electron beam up to 5kGy. Dark current increased after E-beam irradiation differently at each pixel structure. Dark current change is dependent on CMOS pixel structures. CMOS image sensors are now good candidates in demanding applications such as medical image sensor, particle detection and space remote sensing. In these situations, CISs are exposed to high doses of radiation. In fact radiation is known to generate trapped charge in CMOS oxides. It can lead to threshold voltage shifts and current leakages in MOSFETs and dark current increase in photodiodes. We studied ionizing effects in three types of CMOS APSs fabricated by 0.25 CMOS process. The devices were irradiated by a Co 60 source up to 50kGy. All irradiation took place at room temperature. The dark current in the three different pixels exhibits increase with electron beam exposure. From the above figure, the change of dark current is dependent on the pixel structure. Double junction structure has shown relatively small increase of dark current after electron beam irradiation. The dark current in the three different pixels exhibits increase with electron beam exposure. The contribution of the total ionizing dose to the dark current increase is small here, since the devices were left unbiased during the electron beam irradiation. Radiation hardness in dependent on the pixel structures. Pixel2 is relatively vulnerable to radiation exposure. Pixel3 has radiation hardened structure

  10. Developing Antimatter Containment Technology: Modeling Charged Particle Oscillations in a Penning-Malmberg Trap

    Science.gov (United States)

    Chakrabarti, S.; Martin, J. J.; Pearson, J. B.; Lewis, R. A.

    2003-01-01

    The NASA MSFC Propulsion Research Center (PRC) is conducting a research activity examining the storage of low energy antiprotons. The High Performance Antiproton Trap (HiPAT) is an electromagnetic system (Penning-Malmberg design) consisting of a 4 Tesla superconductor, a high voltage confinement electrode system, and an ultra high vacuum test section; designed with an ultimate goal of maintaining charged particles with a half-life of 18 days. Currently, this system is being experimentally evaluated using normal matter ions which are cheap to produce and relatively easy to handle and provide a good indication of overall trap behavior, with the exception of assessing annihilation losses. Computational particle-in-cell plasma modeling using the XOOPIC code is supplementing the experiments. Differing electrode voltage configurations are employed to contain charged particles, typically using flat, modified flat and harmonic potential wells. Ion cloud oscillation frequencies are obtained experimentally by amplification of signals induced on the electrodes by the particle motions. XOOPIC simulations show that for given electrode voltage configurations, the calculated charged particle oscillation frequencies are close to experimental measurements. As a two-dimensional axisymmetric code, XOOPIC cannot model azimuthal plasma variations, such as those induced by radio-frequency (RF) modulation of the central quadrupole electrode in experiments designed to enhance ion cloud containment. However, XOOPIC can model analytically varying electric potential boundary conditions and particle velocity initial conditions. Application of these conditions produces ion cloud axial and radial oscillation frequency modes of interest in achieving the goal of optimizing HiPAT for reliable containment of antiprotons.

  11. Scalable Pressure Sensor Based on Electrothermally Operated Resonator

    KAUST Repository

    Hajjaj, Amal Z.; Hafiz, Md Abdullah Al; Alcheikh, Nouha; Younis, Mohammad I.

    2017-01-01

    We experimentally demonstrate a new pressure sensor that offers the flexibility of being scalable to small sizes up to the nano regime. Unlike conventional pressure sensors that rely on large diaphragms and big-surface structures, the principle of operation here relies on convective cooling of the air surrounding an electrothermally heated resonant structure, which can be a beam or a bridge. This concept is demonstrated using an electrothermally tuned and electrostatically driven MEMS resonator, which is designed to be deliberately curved. We show that the variation of pressure can be tracked accurately by monitoring the change in the resonance frequency of the resonator at a constant electrothermal voltage. We show that the range of the sensed pressure and the sensitivity of detection are controllable by the amount of the applied electrothermal voltage. Theoretically, we verify the device concept using a multi-physics nonlinear finite element model. The proposed pressure sensor is simple in principle and design and offers the possibility of further miniaturization to the nanoscale.

  12. Scalable Pressure Sensor Based on Electrothermally Operated Resonator

    KAUST Repository

    Hajjaj, Amal Z.

    2017-11-03

    We experimentally demonstrate a new pressure sensor that offers the flexibility of being scalable to small sizes up to the nano regime. Unlike conventional pressure sensors that rely on large diaphragms and big-surface structures, the principle of operation here relies on convective cooling of the air surrounding an electrothermally heated resonant structure, which can be a beam or a bridge. This concept is demonstrated using an electrothermally tuned and electrostatically driven MEMS resonator, which is designed to be deliberately curved. We show that the variation of pressure can be tracked accurately by monitoring the change in the resonance frequency of the resonator at a constant electrothermal voltage. We show that the range of the sensed pressure and the sensitivity of detection are controllable by the amount of the applied electrothermal voltage. Theoretically, we verify the device concept using a multi-physics nonlinear finite element model. The proposed pressure sensor is simple in principle and design and offers the possibility of further miniaturization to the nanoscale.

  13. A Wireless Self-Powered Urinary Incontinence Sensor System

    Science.gov (United States)

    Tanaka, Ami; Utsunomiya, Fumiyasu; Douseki, Takakuni

    A self-powered urinary incontinence sensor system consisting of a urine-activated coin battery and a wireless transmitter has been developed as an application for wireless biosensor networks. The urine-activated battery makes possible both the sensing of urine leakage and self-powered operation. An intermittent power-supply circuit that uses an electric double-layer capacitor (EDLC) with a small internal resistance suppresses the supply voltage drop due to the large internal resistance of the battery. This circuit and a 1-V surface acoustic wave (SAW) oscillator reduce the power dissipation of a wireless transmitter. The SAW oscillator quickly responds to the on-off control of the power supply, which is suitable for intermittent operation. To verify the effectiveness of the circuit scheme, the authors fabricated a prototype sensor system. When the volume of urine is 0.2 ml, the battery outputs a voltage of over 1.3 V; and the sensor system can transmit signals over a distance of 5 m.

  14. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system...... to unbalanced faults. The compensation of unbalanced voltage sags and voltage unbalance in the CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0........ The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbalances, for the tested cases in the CIGRE LV test network are mainly due to single phase loads and due...

  15. Dependence of the confinement time of an electron plasma on the magnetic field in a quadrupole Penning trap

    Energy Technology Data Exchange (ETDEWEB)

    Dyavappa, B.M.; Datar, Durgesh; Prakash; Ananthamurthy, Sharath [Bangalore University, Department of Physics, Bangalore (India)

    2017-12-15

    A quadrupole Penning trap is used to confine electrons in weak magnetic fields. Perturbations due to space charge and imperfections in the trap geometry, as well as collisions with the background gas molecules, lead to loss of the electrons from the trap. We present in this work the results on measurements of the electron confinement time and its dependence on the magnetic field in a quadrupolar Penning trap. We describe a method to measure the confinement time of an electron cloud under weak magnetic fields (0.01 T - 0.1 T). This time is found to scale as τ ∝ B{sup 1.41} in variance with the theoretically expected confinement time that scales as τ ∝ B{sup 2} for trapped electrons that are lost through collisions with the neutrals present in the trap. A measurement of the expansion rate of the electron plasma in the trap through controlled variation of the trap voltage, yields expansion times that depend on the energy of escaping electrons. This is found to vary in our case in the scaling range B{sup 0.32} to B{sup 0.43}. Distorting the geometry of the trap, results in a marked change in the confinement time's dependence on the magnetic field. The results indicate that the confinement time of the electron cloud in the trap is limited by both, effects of collisions and perturbations that result in the plasma loss through expansion in the trap. (orig.)

  16. A MEMS AC current sensor for residential and commercial electricity end-use monitoring

    International Nuclear Information System (INIS)

    Leland, E S; Wright, P K; White, R M

    2009-01-01

    This paper presents a novel prototype MEMS sensor for alternating current designed for monitoring electricity end-use in residential and commercial environments. This new current sensor design is comprised of a piezoelectric MEMS cantilever with a permanent magnet mounted on the cantilever's free end. When placed near a wire carrying AC current, the magnet is driven sinusoidally, producing a voltage in the cantilever proportional to the current being measured. Analytical models were developed to predict the applicable magnetic forces and piezoelectric voltage output in order to guide the design of a sensor prototype. This paper also details the fabrication process for this sensor design. Released piezoelectric MEMS cantilevers have been fabricated using a four-mask process and aluminum nitride as the active piezoelectric material. Dispenser-printed microscale composite permanent magnets have been integrated, resulting in the first MEMS-scale prototypes of this current sensor design

  17. Low-Cost Voltage Zero-Crossing Detector for AC-Grid Applications

    Directory of Open Access Journals (Sweden)

    Vorobyov Maxim

    2014-10-01

    Full Text Available Renewable energy sources and energy storage devices are becoming more popular. Some of them like small hydropower turbines, wind turbines and diesel generators produce AC voltage with different frequency and voltage than the main grid. For them power electronics converters are necessary. Power electronics converters presented in industry use two or three level energy conversion, although direct AC to AC converters exist, but one of the main problems is the switch commutation when current or voltage is crossing the zero point. Zero crossing sensors are used to solve this problem. They consist of current or voltage measurement unit and zero crossing detector. Different approaches are used for zero crossing: hardware or software. Hardware approach is simple but it has low precision. Software approach has high precision but it is complicated and expensive. In this paper a simple low cost high precision approach is presented. It takes all advantages from both approaches. While tested with two types of microcontrollers the precision of experimental measurement is 25 μs - 40 μs.

  18. Piezoelectric self sensing actuators for high voltage excitation

    International Nuclear Information System (INIS)

    Grasso, E; Totaro, N; Janocha, H; Naso, D

    2013-01-01

    Self sensing techniques allow the use of a piezoelectric transducer simultaneously as an actuator and as a sensor. Such techniques are based on knowledge of the transducer behaviour and on measurements of electrical quantities, in particular voltage and charge. Past research work has mainly considered the linear behaviour of piezoelectric transducers, consequently restricting the operating driving voltages to low values. In this work a new self sensing technique is proposed which is able to perform self sensing reconstruction both at low and at high driving voltages. This technique, in fact, makes use of a hysteretic model to describe the nonlinear piezoelectric capacitance necessary for self sensing reconstruction. The capacitance can be measured and identified at the antiresonances of a vibrating structure with a good approximation. After providing a mathematical background to deal with the main aspects of self sensing, this technique is compared theoretically and experimentally to a typical linear one by using an aluminum plate with one bonded self sensing transducer and a positive position feedback (PPF) controller to verify the performance in self sensing based vibration control. (paper)

  19. Optimized Controller Design for a 12-Pulse Voltage Source Converter Based HVDC System

    Science.gov (United States)

    Agarwal, Ruchi; Singh, Sanjeev

    2017-12-01

    The paper proposes an optimized controller design scheme for power quality improvement in 12-pulse voltage source converter based high voltage direct current system. The proposed scheme is hybrid combination of golden section search and successive linear search method. The paper aims at reduction of current sensor and optimization of controller. The voltage and current controller parameters are selected for optimization due to its impact on power quality. The proposed algorithm for controller optimizes the objective function which is composed of current harmonic distortion, power factor, and DC voltage ripples. The detailed designs and modeling of the complete system are discussed and its simulation is carried out in MATLAB-Simulink environment. The obtained results are presented to demonstrate the effectiveness of the proposed scheme under different transient conditions such as load perturbation, non-linear load condition, voltage sag condition, and tapped load fault under one phase open condition at both points-of-common coupling.

  20. Study of n-on-p sensors breakdown in presence of dielectrics placed on top surface

    CERN Document Server

    Helling, Cole Michael; The ATLAS collaboration

    2018-01-01

    The ATLAS Upgrade strip module design has readout flex circuits glued directly on top of the sensors’ active area to facilitate the assembly process and minimize the radiation length. The process requires radiation-hard adhesives compatible with the sensor technology. We report on the studies of the breakdown behavior with miniature versions of the prototype sensors, where candidate adhesives were placed in several locations on top of the sensor, including the strip area, guard ring region, and sensor edge. Thermal cycling tends to attenuate the observed cases of breakdown with glue on top of the guard ring. Glue reaching the sensor edge results in low breakdown voltage if it also covers AC- or DC- pads or bias ring openings. Glue placement on top of guard ring region was performed on a large-format sensor, with generally similar results to the miniature sensor tests, except for a large glue deposition, which resulted in a permanent reduction of the breakdown voltage. Post-irradiation measurements were perf...