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Sample records for voltage sensor s4

  1. Hyperpolarization moves S4 sensors inward to open MVP, a methanococcal voltage-gated potassium channel.

    Science.gov (United States)

    Sesti, Federico; Rajan, Sindhu; Gonzalez-Colaso, Rosana; Nikolaeva, Natalia; Goldstein, Steve A N

    2003-04-01

    MVP, a Methanococcus jannaschii voltage-gated potassium channel, was cloned and shown to operate in eukaryotic and prokaryotic cells. Like pacemaker channels, MVP opens on hyperpolarization using S4 voltage sensors like those in classical channels activated by depolarization. The MVP S4 span resembles classical sensors in sequence, charge, topology and movement, traveling inward on hyperpolarization and outward on depolarization (via canaliculi in the protein that bring the extracellular and internal solutions into proximity across a short barrier). Thus, MVP opens with sensors inward indicating a reversal of S4 position and pore state compared to classical channels. Homologous channels in mammals and plants are expected to function similarly.

  2. S1 constrains S4 in the voltage sensor domain of Kv7.1 K+ channels.

    Directory of Open Access Journals (Sweden)

    Yoni Haitin

    Full Text Available Voltage-gated K(+ channels comprise a central pore enclosed by four voltage-sensing domains (VSDs. While movement of the S4 helix is known to couple to channel gate opening and closing, the nature of S4 motion is unclear. Here, we substituted S4 residues of Kv7.1 channels by cysteine and recorded whole-cell mutant channel currents in Xenopus oocytes using the two-electrode voltage-clamp technique. In the closed state, disulfide and metal bridges constrain residue S225 (S4 nearby C136 (S1 within the same VSD. In the open state, two neighboring I227 (S4 are constrained at proximity while residue R228 (S4 is confined close to C136 (S1 of an adjacent VSD. Structural modeling predicts that in the closed to open transition, an axial rotation (approximately 190 degrees and outward translation of S4 (approximately 12 A is accompanied by VSD rocking. This large sensor motion changes the intra-VSD S1-S4 interaction to an inter-VSD S1-S4 interaction. These constraints provide a ground for cooperative subunit interactions and suggest a key role of the S1 segment in steering S4 motion during Kv7.1 gating.

  3. Voltage dependence of a stochastic model of activation of an alpha helical S4 sensor in a K channel membrane

    Science.gov (United States)

    Vaccaro, S. R.

    2011-09-01

    The voltage dependence of the ionic and gating currents of a K channel is dependent on the activation barriers of a voltage sensor with a potential function which may be derived from the principal electrostatic forces on an S4 segment in an inhomogeneous dielectric medium. By variation of the parameters of a voltage-sensing domain model, consistent with x-ray structures and biophysical data, the lowest frequency of the survival probability of each stationary state derived from a solution of the Smoluchowski equation provides a good fit to the voltage dependence of the slowest time constant of the ionic current in a depolarized membrane, and the gating current exhibits a rising phase that precedes an exponential relaxation. For each depolarizing potential, the calculated time dependence of the survival probabilities of the closed states of an alpha helical S4 sensor are in accord with an empirical model of the ionic and gating currents recorded during the activation process.

  4. The topogenic function of S4 promotes membrane insertion of the voltage-sensor domain in the KvAP channel.

    Science.gov (United States)

    Mishima, Eriko; Sato, Yoko; Nanatani, Kei; Hoshi, Naomi; Lee, Jong-Kook; Schiller, Nina; von Heijne, Gunnar; Sakaguchi, Masao; Uozumi, Nobuyuki

    2016-12-01

    Voltage-dependent K + (K V ) channels control K + permeability in response to shifts in the membrane potential. Voltage sensing in K V channels is mediated by the positively charged transmembrane domain S4. The best-characterized K V channel, KvAP, lacks the distinct hydrophilic region corresponding to the S3-S4 extracellular loop that is found in other K + channels. In the present study, we evaluated the topogenic properties of the transmembrane regions within the voltage-sensing domain in KvAP. S3 had low membrane insertion activity, whereas S4 possessed a unique type-I signal anchor (SA-I) function, which enabled it to insert into the membrane by itself. S4 was also found to function as a stop-transfer signal for retention in the membrane. The length and structural nature of the extracellular S3-S4 loop affected the membrane insertion of S3 and S4, suggesting that S3 membrane insertion was dependent on S4. Replacement of charged residues within the transmembrane regions with residues of opposite charge revealed that Asp 72 in S2 and Glu 93 in S3 contributed to membrane insertion of S3 and S4, and increased the stability of S4 in the membrane. These results indicate that the SA-I function of S4, unique among K + channels studied to date, promotes the insertion of S3 into the membrane, and that the charged residues essential for voltage sensing contribute to the membrane-insertion of the voltage sensor domain in KvAP. © 2016 The Author(s); published by Portland Press Limited on behalf of the Biochemical Society.

  5. Nonsensing residues in S3-S4 linker's C terminus affect the voltage sensor set point in K+ channels.

    Science.gov (United States)

    Carvalho-de-Souza, Joao L; Bezanilla, Francisco

    2018-02-05

    Voltage sensitivity in ion channels is a function of highly conserved arginine residues in their voltage-sensing domains (VSDs), but this conservation does not explain the diversity in voltage dependence among different K + channels. Here we study the non-voltage-sensing residues 353 to 361 in Shaker K + channels and find that residues 358 and 361 strongly modulate the voltage dependence of the channel. We mutate these two residues into all possible remaining amino acids (AAs) and obtain Q-V and G-V curves. We introduced the nonconducting W434F mutation to record sensing currents in all mutants except L361R, which requires K + depletion because it is affected by W434F. By fitting Q-Vs with a sequential three-state model for two voltage dependence-related parameters ( V 0 , the voltage-dependent transition from the resting to intermediate state and V 1 , from the latter to the active state) and G-Vs with a two-state model for the voltage dependence of the pore domain parameter ( V 1/2 ), Spearman's coefficients denoting variable relationships with hydrophobicity, available area, length, width, and volume of the AAs in 358 and 361 positions could be calculated. We find that mutations in residue 358 shift Q-Vs and G-Vs along the voltage axis by affecting V 0 , V 1 , and V 1/2 according to the hydrophobicity of the AA. Mutations in residue 361 also shift both curves, but V 0 is affected by the hydrophobicity of the AA in position 361, whereas V 1 and V 1/2 are affected by size-related AA indices. Small-to-tiny AAs have opposite effects on V 1 and V 1/2 in position 358 compared with 361. We hypothesize possible coordination points in the protein that residues 358 and 361 would temporarily and differently interact with in an intermediate state of VSD activation. Our data contribute to the accumulating knowledge of voltage-dependent ion channel activation by adding functional information about the effects of so-called non-voltage-sensing residues on VSD dynamics. © 2018

  6. Probing α-3(10) transitions in a voltage-sensing S4 helix.

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    Kubota, Tomoya; Lacroix, Jérôme J; Bezanilla, Francisco; Correa, Ana M

    2014-09-02

    The S4 helix of voltage sensor domains (VSDs) transfers its gating charges across the membrane electrical field in response to changes of the membrane potential. Recent studies suggest that this process may occur via the helical conversion of the entire S4 between α and 310 conformations. Here, using LRET and FRET, we tested this hypothesis by measuring dynamic changes in the transmembrane length of S4 from engineered VSDs expressed in Xenopus oocytes. Our results suggest that the native S4 from the Ciona intestinalis voltage-sensitive phosphatase (Ci-VSP) does not exhibit extended and long-lived 310 conformations and remains mostly α-helical. Although the S4 of NavAb displays a fully extended 310 conformation in x-ray structures, its transplantation in the Ci-VSP VSD scaffold yielded similar results as the native Ci-VSP S4. Taken together, our study does not support the presence of long-lived extended α-to-310 helical conversions of the S4 in Ci-VSP associated with voltage activation. Copyright © 2014 Biophysical Society. Published by Elsevier Inc. All rights reserved.

  7. CONTRIBUTIONS OF INTRACELLULAR IONS TO Kv CHANNEL VOLTAGE SENSOR DYNAMICS.

    Directory of Open Access Journals (Sweden)

    Samuel eGoodchild

    2012-06-01

    Full Text Available Voltage sensing domains of Kv channels control ionic conductance through coupling of the movement of charged residues in the S4 segment to conformational changes at the cytoplasmic region of the pore domain, that allow K+ ions to flow. Conformational transitions within the voltage sensing domain caused by changes in the applied voltage across the membrane field are coupled to the conducting pore region and the gating of ionic conductance. However, several other factors not directly linked to the voltage dependent movement of charged residues within the voltage sensor impact the dynamics of the voltage sensor, such as inactivation, ionic conductance, intracellular ion identity and block of the channel by intracellular ligands. The effect of intracellular ions on voltage sensor dynamics is of importance in the interpretation of gating current measurements and the physiology of pore/voltage sensor coupling. There is a significant amount of variability in the reported kinetics of voltage sensor deactivation kinetics of Kv channels attributed to different mechanisms such as open state stabilization, immobilization and relaxation processes of the voltage sensor. Here we separate these factors and focus on the causal role that intracellular ions can play in allosterically modulating the dynamics of Kv voltage sensor deactivation kinetics. These considerations are of critical importance in understanding the molecular determinants of the complete channel gating cycle from activation to deactivation.

  8. Direct Interaction between the Voltage Sensors Produces Cooperative Sustained Deactivation in Voltage-gated H+ Channel Dimers*

    OpenAIRE

    Okuda, Hiroko; Yonezawa, Yasushige; Takano, Yu; Okamura, Yasushi; Fujiwara, Yuichiro

    2016-01-01

    The voltage-gated H+ channel (Hv) is a voltage sensor domain-like protein consisting of four transmembrane segments (S1?S4). The native Hv structure is a homodimer, with the two channel subunits functioning cooperatively. Here we show that the two voltage sensor S4 helices within the dimer directly cooperate via a ?-stacking interaction between Trp residues at the middle of each segment. Scanning mutagenesis showed that Trp situated around the original position provides the slow gating kineti...

  9. Contribution of S4 segments and S4-S5 linkers to the low-voltage activation properties of T-type CaV3.3 channels.

    Directory of Open Access Journals (Sweden)

    Ana Laura Sanchez-Sandoval

    Full Text Available Voltage-gated calcium channels contain four highly conserved transmembrane helices known as S4 segments that exhibit a positively charged residue every third position, and play the role of voltage sensing. Nonetheless, the activation range between high-voltage (HVA and low-voltage (LVA activated calcium channels is around 30-40 mV apart, despite the high level of amino acid similarity within their S4 segments. To investigate the contribution of S4 voltage sensors for the low-voltage activation characteristics of CaV3.3 channels we constructed chimeras by swapping S4 segments between this LVA channel and the HVA CaV1.2 channel. The substitution of S4 segment of Domain II in CaV3.3 by that of CaV1.2 (chimera IIS4C induced a ~35 mV shift in the voltage-dependence of activation towards positive potentials, showing an I-V curve that almost overlaps with that of CaV1.2 channel. This HVA behavior induced by IIS4C chimera was accompanied by a 2-fold decrease in the voltage-dependence of channel gating. The IVS4 segment had also a strong effect in the voltage sensing of activation, while substitution of segments IS4 and IIIS4 moved the activation curve of CaV3.3 to more negative potentials. Swapping of IIS4 voltage sensor influenced additional properties of this channel such as steady-state inactivation, current decay, and deactivation. Notably, Domain I voltage sensor played a major role in preventing CaV3.3 channels to inactivate from closed states at extreme hyperpolarized potentials. Finally, site-directed mutagenesis in the CaV3.3 channel revealed a partial contribution of the S4-S5 linker of Domain II to LVA behavior, with synergic effects observed in double and triple mutations. These findings indicate that IIS4 and, to a lesser degree IVS4, voltage sensors are crucial in determining the LVA properties of CaV3.3 channels, although the accomplishment of this function involves the participation of other structural elements like S4-S5 linkers.

  10. Contribution of S4 segments and S4-S5 linkers to the low-voltage activation properties of T-type CaV3.3 channels

    Science.gov (United States)

    Sanchez-Sandoval, Ana Laura; Herrera Carrillo, Zazil; Díaz Velásquez, Clara Estela; Delgadillo, Dulce María; Rivera, Heriberto Manuel

    2018-01-01

    Voltage-gated calcium channels contain four highly conserved transmembrane helices known as S4 segments that exhibit a positively charged residue every third position, and play the role of voltage sensing. Nonetheless, the activation range between high-voltage (HVA) and low-voltage (LVA) activated calcium channels is around 30–40 mV apart, despite the high level of amino acid similarity within their S4 segments. To investigate the contribution of S4 voltage sensors for the low-voltage activation characteristics of CaV3.3 channels we constructed chimeras by swapping S4 segments between this LVA channel and the HVA CaV1.2 channel. The substitution of S4 segment of Domain II in CaV3.3 by that of CaV1.2 (chimera IIS4C) induced a ~35 mV shift in the voltage-dependence of activation towards positive potentials, showing an I-V curve that almost overlaps with that of CaV1.2 channel. This HVA behavior induced by IIS4C chimera was accompanied by a 2-fold decrease in the voltage-dependence of channel gating. The IVS4 segment had also a strong effect in the voltage sensing of activation, while substitution of segments IS4 and IIIS4 moved the activation curve of CaV3.3 to more negative potentials. Swapping of IIS4 voltage sensor influenced additional properties of this channel such as steady-state inactivation, current decay, and deactivation. Notably, Domain I voltage sensor played a major role in preventing CaV3.3 channels to inactivate from closed states at extreme hyperpolarized potentials. Finally, site-directed mutagenesis in the CaV3.3 channel revealed a partial contribution of the S4-S5 linker of Domain II to LVA behavior, with synergic effects observed in double and triple mutations. These findings indicate that IIS4 and, to a lesser degree IVS4, voltage sensors are crucial in determining the LVA properties of CaV3.3 channels, although the accomplishment of this function involves the participation of other structural elements like S4-S5 linkers. PMID:29474447

  11. Contribution of S4 segments and S4-S5 linkers to the low-voltage activation properties of T-type CaV3.3 channels.

    Science.gov (United States)

    Sanchez-Sandoval, Ana Laura; Herrera Carrillo, Zazil; Díaz Velásquez, Clara Estela; Delgadillo, Dulce María; Rivera, Heriberto Manuel; Gomora, Juan Carlos

    2018-01-01

    Voltage-gated calcium channels contain four highly conserved transmembrane helices known as S4 segments that exhibit a positively charged residue every third position, and play the role of voltage sensing. Nonetheless, the activation range between high-voltage (HVA) and low-voltage (LVA) activated calcium channels is around 30-40 mV apart, despite the high level of amino acid similarity within their S4 segments. To investigate the contribution of S4 voltage sensors for the low-voltage activation characteristics of CaV3.3 channels we constructed chimeras by swapping S4 segments between this LVA channel and the HVA CaV1.2 channel. The substitution of S4 segment of Domain II in CaV3.3 by that of CaV1.2 (chimera IIS4C) induced a ~35 mV shift in the voltage-dependence of activation towards positive potentials, showing an I-V curve that almost overlaps with that of CaV1.2 channel. This HVA behavior induced by IIS4C chimera was accompanied by a 2-fold decrease in the voltage-dependence of channel gating. The IVS4 segment had also a strong effect in the voltage sensing of activation, while substitution of segments IS4 and IIIS4 moved the activation curve of CaV3.3 to more negative potentials. Swapping of IIS4 voltage sensor influenced additional properties of this channel such as steady-state inactivation, current decay, and deactivation. Notably, Domain I voltage sensor played a major role in preventing CaV3.3 channels to inactivate from closed states at extreme hyperpolarized potentials. Finally, site-directed mutagenesis in the CaV3.3 channel revealed a partial contribution of the S4-S5 linker of Domain II to LVA behavior, with synergic effects observed in double and triple mutations. These findings indicate that IIS4 and, to a lesser degree IVS4, voltage sensors are crucial in determining the LVA properties of CaV3.3 channels, although the accomplishment of this function involves the participation of other structural elements like S4-S5 linkers.

  12. Structural interactions between lipids, water and S1-S4 voltage-sensing domains.

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    Krepkiy, Dmitriy; Gawrisch, Klaus; Swartz, Kenton J

    2012-11-02

    Membrane proteins serve crucial signaling and transport functions, yet relatively little is known about their structures in membrane environments or how lipids interact with these proteins. For voltage-activated ion channels, X-ray structures suggest that the mobile voltage-sensing S4 helix would be exposed to the membrane, and functional studies reveal that lipid modification can profoundly alter channel activity. Here, we use solid-state NMR to investigate structural interactions of lipids and water with S1-S4 voltage-sensing domains and to explore whether lipids influence the structure of the protein. Our results demonstrate that S1-S4 domains exhibit extensive interactions with lipids and that these domains are heavily hydrated when embedded in a membrane. We also find evidence for preferential interactions of anionic lipids with S1-S4 domains and that these interactions have lifetimes on the timescale of ≤ 10(-3)s. Arg residues within S1-S4 domains are well hydrated and are positioned in close proximity to lipids, exhibiting local interactions with both lipid headgroups and acyl chains. Comparative studies with a positively charged lipid lacking a phosphodiester group reveal that this lipid modification has only modest effects on the structure and hydration of S1-S4 domains. Taken together, our results demonstrate that Arg residues in S1-S4 voltage-sensing domains reside in close proximity to the hydrophobic interior of the membrane yet are well hydrated, a requirement for carrying charge and driving protein motions in response to changes in membrane voltage. Published by Elsevier Ltd.

  13. Genetically encoded fluorescent voltage sensors using the voltage-sensing domain of Nematostella and Danio phosphatases exhibit fast kinetics.

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    Baker, Bradley J; Jin, Lei; Han, Zhou; Cohen, Lawrence B; Popovic, Marko; Platisa, Jelena; Pieribone, Vincent

    2012-07-15

    A substantial increase in the speed of the optical response of genetically encoded fluorescent protein voltage sensors (FP voltage sensors) was achieved by using the voltage-sensing phosphatase genes of Nematostella vectensis and Danio rerio. A potential N. vectensis voltage-sensing phosphatase was identified in silico. The voltage-sensing domain (S1-S4) of the N. vectensis homolog was used to create an FP voltage sensor called Nema. By replacing the phosphatase with a cerulean/citrine FRET pair, a new FP voltage sensor was synthesized with fast off kinetics (Tau(off)voltage-sensing phosphatase homolog, designated Zahra and Zahra 2, exhibited fast on and off kinetics within 2ms of the time constants observed with the organic voltage-sensitive dye, di4-ANEPPS. Mutagenesis of the S4 region of the Danio FP voltage sensor shifted the voltage dependence to more negative potentials but did not noticeably affect the kinetics of the optical signal. Copyright © 2012 Elsevier B.V. All rights reserved.

  14. Genetically-encoded fluorescent voltage sensors using the voltage-sensing domain of Nematostella and Danio phosphatases exhibit fast kinetics

    Science.gov (United States)

    Baker, Bradley J.; Jin, Lei; Han, Zhou; Cohen, Lawrence B.; Popovic, Marko; Platisa, Jelena; Pieribone, Vincent

    2012-01-01

    A substantial increase in the speed of the optical response of genetically-encoded Fluorescent Protein voltage sensors (FP voltage sensors) was achieved by using the voltage-sensing phosphatase genes of Nematostella vectensis and Danio rerio. A potential N. vectensis voltage-sensing phosphatase was identified in silico. The voltage-sensing domain (S1–S4) of the N. vectensis homolog was used to create an FP voltage sensor called Nema. By replacing the phosphatase with a cerulean/citrine FRET pair, a new FP voltage sensor was synthesized with fast off kinetics (Tauoff voltage-sensing phosphatase homolog, designated Zahra and Zahra 2, exhibited fast on and off kinetics within 2 msec of the time constants observed with the organic voltage-sensitive dye, di4-ANEPPS. Mutagenesis of the S4 region of the Danio FP voltage sensor shifted the voltage dependence to more negative potentials but did not noticeably affect the kinetics of the optical signal. PMID:22634212

  15. Two separate interfaces between the voltage sensor and pore are required for the function of voltage-dependent K(+ channels.

    Directory of Open Access Journals (Sweden)

    Seok-Yong Lee

    2009-03-01

    Full Text Available Voltage-dependent K(+ (Kv channels gate open in response to the membrane voltage. To further our understanding of how cell membrane voltage regulates the opening of a Kv channel, we have studied the protein interfaces that attach the voltage-sensor domains to the pore. In the crystal structure, three physical interfaces exist. Only two of these consist of amino acids that are co-evolved across the interface between voltage sensor and pore according to statistical coupling analysis of 360 Kv channel sequences. A first co-evolved interface is formed by the S4-S5 linkers (one from each of four voltage sensors, which form a cuff surrounding the S6-lined pore opening at the intracellular surface. The crystal structure and published mutational studies support the hypothesis that the S4-S5 linkers convert voltage-sensor motions directly into gate opening and closing. A second co-evolved interface forms a small contact surface between S1 of the voltage sensor and the pore helix near the extracellular surface. We demonstrate through mutagenesis that this interface is necessary for the function and/or structure of two different Kv channels. This second interface is well positioned to act as a second anchor point between the voltage sensor and the pore, thus allowing efficient transmission of conformational changes to the pore's gate.

  16. Non-contact current and voltage sensor

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    Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

    2014-03-25

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  17. Theoretical analysis of magnetic sensor output voltage

    International Nuclear Information System (INIS)

    Liu Haishun; Dun Chaochao; Dou Linming; Yang Weiming

    2011-01-01

    The output voltage is an important parameter to determine the stress state in magnetic stress measurement, the relationship between the output voltage and the difference in the principal stresses was investigated by a comprehensive application of magnetic circuit theory, magnetization theory, stress analysis as well as the law of electromagnetic induction, and a corresponding quantitative equation was derived. It is drawn that the output voltage is proportional to the difference in the principal stresses, and related to the angle between the principal stress and the direction of the sensor. This investigation provides a theoretical basis for the principle stresses measurement by output voltage. - Research highlights: → A comprehensive investigation of magnetic stress signal. → Derived a quantitative equation about output voltage and the principal stresses. → The output voltage is proportional to the difference of the principal stresses. → Provide a theoretical basis for the principle stresses measurement.

  18. Integrative Approach with Electrophysiological and Theoretical Methods Reveals a New Role of S4 Positively Charged Residues in PKD2L1 Channel Voltage-Sensing.

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    Numata, Tomohiro; Tsumoto, Kunichika; Yamada, Kazunori; Kurokawa, Tatsuki; Hirose, Shinichi; Nomura, Hideki; Kawano, Mitsuhiro; Kurachi, Yoshihisa; Inoue, Ryuji; Mori, Yasuo

    2017-08-29

    Numerical model-based simulations provide important insights into ion channel gating when experimental limitations exist. Here, a novel strategy combining numerical simulations with patch clamp experiments was used to investigate the net positive charges in the putative transmembrane segment 4 (S4) of the atypical, positively-shifted voltage-dependence of polycystic kidney disease 2-like 1 (PKD2L1) channel. Charge-neutralising mutations (K452Q, K455Q and K461Q) in S4 reduced gating charges, positively shifted the Boltzmann-type activation curve [i.e., open probability (P open )-V curve] and altered the time-courses of activation/deactivation of PKD2L1, indicating that this region constitutes part of a voltage sensor. Numerical reconstruction of wild-type (WT) and mutant PKD2L1-mediated currents necessitated, besides their voltage-dependent gating parameters, a scaling factor that describes the voltage-dependence of maximal conductance, G max . Subsequent single-channel conductance (γ) measurements revealed that voltage-dependence of G max in WT can be explained by the inward-rectifying property of γ, which is greatly changed in PKD2L1 mutants. Homology modelling based on PKD2 and Na V Ab structures suggest that such voltage dependence of P open and γ in PKD2L1 could both reflect the charged state of the S4 domain. The present conjunctive experimental and theoretical approaches provide a framework to explore the undetermined mechanism(s) regulating TRP channels that possess non-classical voltage-dependent properties.

  19. Optical sensors for the measurement of electric current and voltage

    Energy Technology Data Exchange (ETDEWEB)

    Rutgers, W R; Hulshof, H J.M.; Laurensse, I J; van der Wey, A H

    1987-01-01

    Optical sensors for the measurement of electrical current and voltage were developed for application in electric power systems. The current sensor, based on the Faraday effect in a monomode glass fiber, and the voltage sensor, based on the transverse Pockels effect in a crystal, are demonstrated in wide-band (10 MHz) interference-free measurements of pulsed currents and impulse voltages.

  20. Intermediate state trapping of a voltage sensor

    DEFF Research Database (Denmark)

    Lacroix, Jérôme J; Pless, Stephan Alexander; Maragliano, Luca

    2012-01-01

    Voltage sensor domains (VSDs) regulate ion channels and enzymes by undergoing conformational changes depending on membrane electrical signals. The molecular mechanisms underlying the VSD transitions are not fully understood. Here, we show that some mutations of I241 in the S1 segment of the Shaker...... Kv channel positively shift the voltage dependence of the VSD movement and alter the functional coupling between VSD and pore domains. Among the I241 mutants, I241W immobilized the VSD movement during activation and deactivation, approximately halfway between the resting and active states......, and drastically shifted the voltage activation of the ionic conductance. This phenotype, which is consistent with a stabilization of an intermediate VSD conformation by the I241W mutation, was diminished by the charge-conserving R2K mutation but not by the charge-neutralizing R2Q mutation. Interestingly, most...

  1. Capacitor Voltages Measurement and Balancing in Flying Capacitor Multilevel Converters Utilizing a Single Voltage Sensor

    DEFF Research Database (Denmark)

    Farivar, Glen; Ghias, Amer M. Y. M.; Hredzak, Branislav

    2017-01-01

    This paper proposes a new method for measuring capacitor voltages in multilevel flying capacitor (FC) converters that requires only one voltage sensor per phase leg. Multiple dc voltage sensors traditionally used to measure the capacitor voltages are replaced with a single voltage sensor at the ac...... side of the phase leg. The proposed method is subsequently used to balance the capacitor voltages using only the measured ac voltage. The operation of the proposed measurement and balancing method is independent of the number of the converter levels. Experimental results presented for a five-level FC...

  2. Interface band gap narrowing behind open circuit voltage losses in Cu2ZnSnS4 solar cells

    DEFF Research Database (Denmark)

    Crovetto, Andrea; Palsgaard, Mattias Lau Nøhr; Gunst, Tue

    2017-01-01

    We present evidence that bandgap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu2ZnSnS4/CdS solar cells. Bandgap narrowing is caused by surface states that extend the Cu2ZnSnS4valence band into the forbidden gap. Those surface states...... are consistently found in Cu2ZnSnS4, but not in Cu2ZnSnSe4, by first-principles calculations. They do not simply arise from defects at surfaces but are an intrinsic feature of Cu2ZnSnS4 surfaces. By including those states in a device model, the outcome of previously published temperature-dependent open circuit...... voltage measurements on Cu2ZnSnS4 solar cells can be reproduced quantitatively without necessarily assuming a cliff-like conduction band offset with the CdS buffer layer. Our first-principles calculations indicate that Zn-based alternative buffer layers are advantageous due to the ability of...

  3. Niflumic acid alters gating of HCN2 pacemaker channels by interaction with the outer region of S4 voltage sensing domains.

    Science.gov (United States)

    Cheng, Lan; Sanguinetti, Michael C

    2009-05-01

    Niflumic acid, 2-[[3-(trifluoromethyl)phenyl]amino]pyridine-3-carboxylic acid (NFA), is a nonsteroidal anti-inflammatory drug that also blocks or modifies the gating of many ion channels. Here, we investigated the effects of NFA on hyperpolarization-activated cyclic nucleotide-gated cation (HCN) pacemaker channels expressed in X. laevis oocytes using site-directed mutagenesis and the two-electrode voltage-clamp technique. Extracellular NFA acted rapidly and caused a slowing of activation and deactivation and a hyperpolarizing shift in the voltage dependence of HCN2 channel activation (-24.5 +/- 1.2 mV at 1 mM). Slowed channel gating and reduction of current magnitude was marked in oocytes treated with NFA, while clamped at 0 mV but minimal in oocytes clamped at -100 mV, indicating the drug preferentially interacts with channels in the closed state. NFA at 0.1 to 3 mM shifted the half-point for channel activation in a concentration-dependent manner, with an EC(50) of 0.54 +/- 0.068 mM and a predicted maximum shift of -38 mV. NFA at 1 mM also reduced maximum HCN2 conductance by approximately 20%, presumably by direct block of the pore. The rapid onset and state-dependence of NFA-induced changes in channel gating suggests an interaction with the extracellular region of the S4 transmembrane helix, the primary voltage-sensing domain of HCN2. Neutralization (by mutation to Gln) of any three of the outer four basic charged residues in S4, but not single mutations, abrogated the NFA-induced shift in channel activation. We conclude that NFA alters HCN2 gating by interacting with the extracellular end of the S4 voltage sensor domains.

  4. Constraints on voltage sensor movement in the shaker K+ channel.

    Science.gov (United States)

    Darman, Rachel B; Ivy, Allison A; Ketty, Vina; Blaustein, Robert O

    2006-12-01

    In nerve and muscle cells, the voltage-gated opening and closing of cation-selective ion channels is accompanied by the translocation of 12-14 elementary charges across the membrane's electric field. Although most of these charges are carried by residues in the S4 helix of the gating module of these channels, the precise nature of their physical movement is currently the topic of spirited debate. Broadly speaking, two classes of models have emerged: those that suggest that small-scale motions can account for the extensive charge displacement, and those that invoke a much larger physical movement. In the most recent incarnation of the latter type of model, which is based on structural and functional data from the archaebacterial K(+) channel KvAP, a "voltage-sensor paddle" comprising a helix-turn-helix of S3-S4 translocates approximately 20 A through the bilayer during the gating cycle (Jiang, Y., A. Lee, J. Chen, V. Ruta, M. Cadene, B.T. Chait, and R. MacKinnon. 2003. Nature. 423:33-41; Jiang, Y., V. Ruta, J. Chen, A. Lee, and R. MacKinnon. 2003. Nature. 423:42-48.; Ruta, V., J. Chen, and R. MacKinnon. 2005. Cell. 123:463-475). We used two methods to test for analogous motions in the Shaker K(+) channel, each examining the aqueous exposure of residues near S3. In the first, we employed a pore-blocking maleimide reagent (Blaustein, R.O., P.A. Cole, C. Williams, and C. Miller. 2000. Nat. Struct. Biol. 7:309-311) to probe for state-dependent changes in the chemical reactivity of substituted cysteines; in the second, we tested the state-dependent accessibility of a tethered biotin to external streptavidin (Qiu, X.Q., K.S. Jakes, A. Finkelstein, and S.L. Slatin. 1994. J. Biol. Chem. 269:7483-7488; Slatin, S.L., X.Q. Qiu, K.S. Jakes, and A. Finkelstein. 1994. Nature. 371:158-161). In both types of experiments, residues predicted to lie near the top of S3 did not exhibit any change in aqueous exposure during the gating cycle. This lack of state dependence argues against

  5. On-site voltage measurement with capacitive sensors on high voltage systems

    NARCIS (Netherlands)

    Wu, L.; Wouters, P.A.A.F.; Heesch, van E.J.M.; Steennis, E.F.

    2011-01-01

    In Extra/High-Voltage (EHV/HV) power systems, over-voltages occur e.g. due to transients or resonances. At places where no conventional voltage measurement devices can be installed, on-site measurement of these occurrences requires preferably non intrusive sensors, which can be installed with little

  6. An optical fiber Bragg grating and piezoelectric ceramic voltage sensor

    Science.gov (United States)

    Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

    2017-10-01

    Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

  7. An optical fiber Bragg grating and piezoelectric ceramic voltage sensor.

    Science.gov (United States)

    Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

    2017-10-01

    Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

  8. A new mechanism of voltage-dependent gating exposed by KV10.1 channels interrupted between voltage sensor and pore.

    Science.gov (United States)

    Tomczak, Adam P; Fernández-Trillo, Jorge; Bharill, Shashank; Papp, Ferenc; Panyi, Gyorgy; Stühmer, Walter; Isacoff, Ehud Y; Pardo, Luis A

    2017-05-01

    Voltage-gated ion channels couple transmembrane potential changes to ion flow. Conformational changes in the voltage-sensing domain (VSD) of the channel are thought to be transmitted to the pore domain (PD) through an α-helical linker between them (S4-S5 linker). However, our recent work on channels disrupted in the S4-S5 linker has challenged this interpretation for the KCNH family. Furthermore, a recent single-particle cryo-electron microscopy structure of K V 10.1 revealed that the S4-S5 linker is a short loop in this KCNH family member, confirming the need for an alternative gating model. Here we use "split" channels made by expression of VSD and PD as separate fragments to investigate the mechanism of gating in K V 10.1. We find that disruption of the covalent connection within the S4 helix compromises the ability of channels to close at negative voltage, whereas disconnecting the S4-S5 linker from S5 slows down activation and deactivation kinetics. Surprisingly, voltage-clamp fluorometry and MTS accessibility assays show that the motion of the S4 voltage sensor is virtually unaffected when VSD and PD are not covalently bound. Finally, experiments using constitutively open PD mutants suggest that the presence of the VSD is structurally important for the conducting conformation of the pore. Collectively, our observations offer partial support to the gating model that assumes that an inward motion of the C-terminal S4 helix, rather than the S4-S5 linker, closes the channel gate, while also suggesting that control of the pore by the voltage sensor involves more than one mechanism. © 2017 Tomczak et al.

  9. KCNE1 constrains the voltage sensor of Kv7.1 K+ channels.

    Directory of Open Access Journals (Sweden)

    Liora Shamgar

    Full Text Available Kv7 potassium channels whose mutations cause cardiovascular and neurological disorders are members of the superfamily of voltage-gated K(+ channels, comprising a central pore enclosed by four voltage-sensing domains (VSDs and sharing a homologous S4 sensor sequence. The Kv7.1 pore-forming subunit can interact with various KCNE auxiliary subunits to form K(+ channels with very different gating behaviors. In an attempt to characterize the nature of the promiscuous gating of Kv7.1 channels, we performed a tryptophan-scanning mutagenesis of the S4 sensor and analyzed the mutation-induced perturbations in gating free energy. Perturbing the gating energetics of Kv7.1 bias most of the mutant channels towards the closed state, while fewer mutations stabilize the open state or the inactivated state. In the absence of auxiliary subunits, mutations of specific S4 residues mimic the gating phenotypes produced by co-assembly of Kv7.1 with either KCNE1 or KCNE3. Many S4 perturbations compromise the ability of KCNE1 to properly regulate Kv7.1 channel gating. The tryptophan-induced packing perturbations and cysteine engineering studies in S4 suggest that KCNE1 lodges at the inter-VSD S4-S1 interface between two adjacent subunits, a strategic location to exert its striking action on Kv7.1 gating functions.

  10. The cooperative voltage sensor motion that gates a potassium channel.

    Science.gov (United States)

    Pathak, Medha; Kurtz, Lisa; Tombola, Francesco; Isacoff, Ehud

    2005-01-01

    The four arginine-rich S4 helices of a voltage-gated channel move outward through the membrane in response to depolarization, opening and closing gates to generate a transient ionic current. Coupling of voltage sensing to gating was originally thought to operate with the S4s moving independently from an inward/resting to an outward/activated conformation, so that when all four S4s are activated, the gates are driven to open or closed. However, S4 has also been found to influence the cooperative opening step (Smith-Maxwell et al., 1998a), suggesting a more complex mechanism of coupling. Using fluorescence to monitor structural rearrangements in a Shaker channel mutant, the ILT channel (Ledwell and Aldrich, 1999), that energetically isolates the steps of activation from the cooperative opening step, we find that opening is accompanied by a previously unknown and cooperative movement of S4. This gating motion of S4 appears to be coupled to the internal S6 gate and to two forms of slow inactivation. Our results suggest that S4 plays a direct role in gating. While large transmembrane rearrangements of S4 may be required to unlock the gating machinery, as proposed before, it appears to be the gating motion of S4 that drives the gates to open and close.

  11. Engineering of a genetically encodable fluorescent voltage sensor exploiting fast Ci-VSP voltage-sensing movements.

    Science.gov (United States)

    Lundby, Alicia; Mutoh, Hiroki; Dimitrov, Dimitar; Akemann, Walther; Knöpfel, Thomas

    2008-06-25

    Ci-VSP contains a voltage-sensing domain (VSD) homologous to that of voltage-gated potassium channels. Using charge displacement ('gating' current) measurements we show that voltage-sensing movements of this VSD can occur within 1 ms in mammalian membranes. Our analysis lead to development of a genetically encodable fluorescent protein voltage sensor (VSFP) in which the fast, voltage-dependent conformational changes of the Ci-VSP voltage sensor are transduced to similarly fast fluorescence read-outs.

  12. Opposite effects of the S4-S5 linker and PIP2 on voltage-gated channel function: KCNQ1/KCNE1 and other channels

    Directory of Open Access Journals (Sweden)

    Frank S Choveau

    2012-07-01

    Full Text Available Voltage-gated potassium (Kv channels are tetramers, each subunit presenting six transmembrane segments (S1-S6, with each S1-S4 segments forming a voltage-sensing domain (VSD and the four S5-S6 forming both the conduction pathway and its gate. S4 segments control the opening of the intracellular activation gate in response to changes in membrane potential. Crystal structures of several voltage-gated ion channels in combination with biophysical and mutagenesis studies highlighted the critical role of the S4-S5 linker (S4S5L and of the S6 C-terminal part (S6T in the coupling between the VSD and the activation gate. Several mechanisms have been proposed to describe the coupling at a molecular scale. This review summarizes the mechanisms suggested for various voltage-gated ion channels, including a mechanism that we described for KCNQ1, in which S4S5L is acting like a ligand binding to S6T to stabilize the channel in a closed state. As discussed in this review, this mechanism may explain the reverse response to depolarization in HCN-like channels. As opposed to S4S5L, the phosphoinositide, phosphatidylinositol 4,5-bisphosphate (PIP2, stabilizes KCNQ1 channel in an open state. Many other ion channels (not only voltage-gated require PIP2 to function properly, confirming its crucial importance as an ion channel co-factor. This is highlighted in cases in which an altered regulation of ion channels by PIP2 leads to channelopathies, as observed for KCNQ1. This review summarizes the state of the art on the two regulatory mechanisms that are critical for KCNQ1 and other voltage-gated channels function (PIP2 and S4-S5L, and assesses their potential physiological and pathophysiological roles.

  13. High-resolution orientation and depth of insertion of the voltage-sensing S4 helix of a potassium channel in lipid bilayers.

    Science.gov (United States)

    Doherty, Tim; Su, Yongchao; Hong, Mei

    2010-08-27

    The opening and closing of voltage-gated potassium (Kv) channels are controlled by several conserved Arg residues in the S4 helix of the voltage-sensing domain. The interaction of these positively charged Arg residues with the lipid membrane has been of intense interest for understanding how membrane proteins fold to allow charged residues to insert into lipid bilayers against free-energy barriers. Using solid-state NMR, we have now determined the orientation and insertion depth of the S4 peptide of the KvAP channel in lipid bilayers. Two-dimensional (15)N correlation experiments of macroscopically oriented S4 peptide in phospholipid bilayers revealed a tilt angle of 40 degrees and two possible rotation angles differing by 180 degrees around the helix axis. Remarkably, the tilt angle and one of the two rotation angles are identical to those of the S4 helix in the intact voltage-sensing domain, suggesting that interactions between the S4 segment and other helices of the voltage-sensing domain are not essential for the membrane topology of the S4 helix. (13)C-(31)P distances between the S4 backbone and the lipid (31)P indicate a approximately 9 A local thinning and 2 A average thinning of the DMPC (1,2-dimyristoyl-sn-glycero-3-phosphochloline)/DMPG (1,2-dimyristoyl-sn-glycero-3-phosphatidylglycerol) bilayer, consistent with neutron diffraction data. Moreover, a short distance of 4.6 A from the guanidinium C(zeta) of the second Arg to (31)P indicates the existence of guanidinium phosphate hydrogen bonding and salt bridges. These data suggest that the structure of the Kv gating helix is mainly determined by protein-lipid interactions instead of interhelical protein-protein interactions, and the S4 amino acid sequence encodes sufficient information for the membrane topology of this crucial gating helix. Copyright (c) 2010 Elsevier Ltd. All rights reserved.

  14. Time varying voltage combustion control and diagnostics sensor

    Science.gov (United States)

    Chorpening, Benjamin T [Morgantown, WV; Thornton, Jimmy D [Morgantown, WV; Huckaby, E David [Morgantown, WV; Fincham, William [Fairmont, WV

    2011-04-19

    A time-varying voltage is applied to an electrode, or a pair of electrodes, of a sensor installed in a fuel nozzle disposed adjacent the combustion zone of a continuous combustion system, such as of the gas turbine engine type. The time-varying voltage induces a time-varying current in the flame which is measured and used to determine flame capacitance using AC electrical circuit analysis. Flame capacitance is used to accurately determine the position of the flame from the sensor and the fuel/air ratio. The fuel and/or air flow rate (s) is/are then adjusted to provide reduced flame instability problems such as flashback, combustion dynamics and lean blowout, as well as reduced emissions. The time-varying voltage may be an alternating voltage and the time-varying current may be an alternating current.

  15. High-voltage pixel sensors for ATLAS upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Perić, I., E-mail: ivan.peric@ziti.uni-heidelberg.de [Heidelberg University, Institute of Computer Engineering, Mannheim (Germany); Kreidl, C.; Fischer, P. [Heidelberg University, Institute of Computer Engineering, Mannheim (Germany); Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M. [CPPM, Marseille (France); Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B. [CERN, Geneve (Switzerland); Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A. [University of Geneve (Switzerland); and others

    2014-11-21

    The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

  16. Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2012-01-01

    We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

  17. Domain IV voltage-sensor movement is both sufficient and rate limiting for fast inactivation in sodium channels.

    Science.gov (United States)

    Capes, Deborah L; Goldschen-Ohm, Marcel P; Arcisio-Miranda, Manoel; Bezanilla, Francisco; Chanda, Baron

    2013-08-01

    Voltage-gated sodium channels are critical for the generation and propagation of electrical signals in most excitable cells. Activation of Na(+) channels initiates an action potential, and fast inactivation facilitates repolarization of the membrane by the outward K(+) current. Fast inactivation is also the main determinant of the refractory period between successive electrical impulses. Although the voltage sensor of domain IV (DIV) has been implicated in fast inactivation, it remains unclear whether the activation of DIV alone is sufficient for fast inactivation to occur. Here, we functionally neutralize each specific voltage sensor by mutating several critical arginines in the S4 segment to glutamines. We assess the individual role of each voltage-sensing domain in the voltage dependence and kinetics of fast inactivation upon its specific inhibition. We show that movement of the DIV voltage sensor is the rate-limiting step for both development and recovery from fast inactivation. Our data suggest that activation of the DIV voltage sensor alone is sufficient for fast inactivation to occur, and that activation of DIV before channel opening is the molecular mechanism for closed-state inactivation. We propose a kinetic model of sodium channel gating that can account for our major findings over a wide voltage range by postulating that DIV movement is both necessary and sufficient for fast inactivation.

  18. Asymmetric functional contributions of acidic and aromatic side chains in sodium channel voltage-sensor domains

    DEFF Research Database (Denmark)

    Pless, Stephan Alexander; Elstone, Fisal D; Niciforovic, Ana P

    2014-01-01

    largely enigmatic. To this end, natural and unnatural side chain substitutions were made in the S2 hydrophobic core (HC), the extracellular negative charge cluster (ENC), and the intracellular negative charge cluster (INC) of the four VSDs of the skeletal muscle sodium channel isoform (NaV1......Voltage-gated sodium (NaV) channels mediate electrical excitability in animals. Despite strong sequence conservation among the voltage-sensor domains (VSDs) of closely related voltage-gated potassium (KV) and NaV channels, the functional contributions of individual side chains in Nav VSDs remain.......4). The results show that the highly conserved aromatic side chain constituting the S2 HC makes distinct functional contributions in each of the four NaV domains. No obvious cation-pi interaction exists with nearby S4 charges in any domain, and natural and unnatural mutations at these aromatic sites produce...

  19. Low Power/Low Voltage Interface Circuitry for Capacitive Sensors

    DEFF Research Database (Denmark)

    Furst, Claus Efdmann

    This thesis focuses mainly on low power/low voltage interface circuits, implemented in CMOS, for capacitive sensors. A brief discussion of demands and possibilities for analog signal processing in the future is presented. Techniques for low power design is presented. This is done by analyzing power...... power consumption. It is shown that the Sigma-Delta modulator is advantageous when embedded in a feedback loop with a mechanical sensor. Here a micro mechanical capacitive microphone. Feedback and detection circuitry for a capacitive microphone is presented. Practical implementations of low power....../low voltage interface circuitry is presented. It is demonstrated that an amplifier optimized for a capacitive microphone implemented in a standard 0.7 micron CMOS technology competes well with a traditional JFET amplifier. Furthermore a low power/low voltage 3rd order Sigma-Delta modulator is presented...

  20. Developing Fast Fluorescent Protein Voltage Sensors by Optimizing FRET Interactions.

    Directory of Open Access Journals (Sweden)

    Uhna Sung

    Full Text Available FRET (Förster Resonance Energy Transfer-based protein voltage sensors can be useful for monitoring neuronal activity in vivo because the ratio of signals between the donor and acceptor pair reduces common sources of noise such as heart beat artifacts. We improved the performance of FRET based genetically encoded Fluorescent Protein (FP voltage sensors by optimizing the location of donor and acceptor FPs flanking the voltage sensitive domain of the Ciona intestinalis voltage sensitive phosphatase. First, we created 39 different "Nabi1" constructs by positioning the donor FP, UKG, at 8 different locations downstream of the voltage-sensing domain and the acceptor FP, mKO, at 6 positions upstream. Several of these combinations resulted in large voltage dependent signals and relatively fast kinetics. Nabi1 probes responded with signal size up to 11% ΔF/F for a 100 mV depolarization and fast response time constants both for signal activation (~2 ms and signal decay (~3 ms. We improved expression in neuronal cells by replacing the mKO and UKG FRET pair with Clover (donor FP and mRuby2 (acceptor FP to create Nabi2 probes. Nabi2 probes also had large signals and relatively fast time constants in HEK293 cells. In primary neuronal culture, a Nabi2 probe was able to differentiate individual action potentials at 45 Hz.

  1. Engineering of a genetically encodable fluorescent voltage sensor exploiting fast Ci-VSP voltage-sensing movements.

    Directory of Open Access Journals (Sweden)

    Alicia Lundby

    2008-06-01

    Full Text Available Ci-VSP contains a voltage-sensing domain (VSD homologous to that of voltage-gated potassium channels. Using charge displacement ('gating' current measurements we show that voltage-sensing movements of this VSD can occur within 1 ms in mammalian membranes. Our analysis lead to development of a genetically encodable fluorescent protein voltage sensor (VSFP in which the fast, voltage-dependent conformational changes of the Ci-VSP voltage sensor are transduced to similarly fast fluorescence read-outs.

  2. Imaging Voltage in Genetically Defined Neuronal Subpopulations with a Cre Recombinase-Targeted Hybrid Voltage Sensor.

    Science.gov (United States)

    Bayguinov, Peter O; Ma, Yihe; Gao, Yu; Zhao, Xinyu; Jackson, Meyer B

    2017-09-20

    Genetically encoded voltage indicators create an opportunity to monitor electrical activity in defined sets of neurons as they participate in the complex patterns of coordinated electrical activity that underlie nervous system function. Taking full advantage of genetically encoded voltage indicators requires a generalized strategy for targeting the probe to genetically defined populations of cells. To this end, we have generated a mouse line with an optimized hybrid voltage sensor (hVOS) probe within a locus designed for efficient Cre recombinase-dependent expression. Crossing this mouse with Cre drivers generated double transgenics expressing hVOS probe in GABAergic, parvalbumin, and calretinin interneurons, as well as hilar mossy cells, new adult-born neurons, and recently active neurons. In each case, imaging in brain slices from male or female animals revealed electrically evoked optical signals from multiple individual neurons in single trials. These imaging experiments revealed action potentials, dynamic aspects of dendritic integration, and trial-to-trial fluctuations in response latency. The rapid time response of hVOS imaging revealed action potentials with high temporal fidelity, and enabled accurate measurements of spike half-widths characteristic of each cell type. Simultaneous recording of rapid voltage changes in multiple neurons with a common genetic signature offers a powerful approach to the study of neural circuit function and the investigation of how neural networks encode, process, and store information. SIGNIFICANCE STATEMENT Genetically encoded voltage indicators hold great promise in the study of neural circuitry, but realizing their full potential depends on targeting the sensor to distinct cell types. Here we present a new mouse line that expresses a hybrid optical voltage sensor under the control of Cre recombinase. Crossing this line with Cre drivers generated double-transgenic mice, which express this sensor in targeted cell types. In

  3. Bio-Inspired Carbon Monoxide Sensors with Voltage-Activated Sensitivity

    KAUST Repository

    Savagatrup, Suchol; Schroeder, Vera; He, Xin; Lin, Sibo; He, Maggie; Yassine, Omar; Salama, Khaled N.; Zhang, Xixiang; Swager, Timothy M.

    2017-01-01

    voltage offers a predicted extra dimension for sensing. Specifically, the sensors show a significant increase in sensitivity toward CO when negative gate voltage is applied. The dosimetric sensors are selective to ppm levels of CO and functional in air. UV

  4. Determination of the aging offset voltage of AMR sensors based on accelerated degradation test

    NARCIS (Netherlands)

    Zambrano Constantini, A.C.; Kerkhoff, Hans G.

    Usually Anisotropic Magnetoresistance angle sensors are configured with two Wheatstone bridges, but an undesirable offset voltage included in the sensor output affects its accuracy. The total offset voltage combines a voltage due to resistance mismatches during manufacturing and a voltage from

  5. Ozone Sensor for Application in Medium Voltage Switchboard

    Directory of Open Access Journals (Sweden)

    Letizia De Maria

    2009-01-01

    Full Text Available The application of a new spectroscopic type fiber sensor for ozone detection in electrical components of Medium Voltage (MV network is evaluated. The sensor layout is based on the use of an optical retroreflector, to improve the detection sensitivity, and it was especially designed for detecting in situ rapid changes of ozone concentration. Preliminary tests were performed in a typical MV switchboard. Artificial defects simulated predischarge phenomena arising during real operating conditions. Results are discussed by a comparison with data simultaneously acquired with a standard partial discharge system.

  6. Design and Simulation Test of an Open D-Dot Voltage Sensor

    Directory of Open Access Journals (Sweden)

    Yunjie Bai

    2015-09-01

    Full Text Available Nowadays, sensor development focuses on miniaturization and non-contact measurement. According to the D-dot principle, a D-dot voltage sensor with a new structure was designed based on the differential D-dot sensor with a symmetrical structure, called an asymmetric open D-dot voltage sensor. It is easier to install. The electric field distribution of the sensor was analyzed through Ansoft Maxwell and an open D-dot voltage sensor was designed. This open D-voltage sensor is characteristic of accessible insulating strength and small electric field distortion. The steady and transient performance test under 10 kV-voltage reported satisfying performances of the designed open D-dot voltage sensor. It conforms to requirements for a smart grid measuring sensor in intelligence, miniaturization and facilitation.

  7. Direct evidence that scorpion α-toxins (site-3 modulate sodium channel inactivation by hindrance of voltage-sensor movements.

    Directory of Open Access Journals (Sweden)

    Zhongming Ma

    Full Text Available The position of the voltage-sensing transmembrane segment, S4, in voltage-gated ion channels as a function of voltage remains incompletely elucidated. Site-3 toxins bind primarily to the extracellular loops connecting transmembrane helical segments S1-S2 and S3-S4 in Domain 4 (D4 and S5-S6 in Domain 1 (D1 and slow fast-inactivation of voltage-gated sodium channels. As S4 of the human skeletal muscle voltage-gated sodium channel, hNav1.4, moves in response to depolarization from the resting to the inactivated state, two D4S4 reporters (R2C and R3C, Arg1451Cys and Arg1454Cys, respectively move from internal to external positions as deduced by reactivity to internally or externally applied sulfhydryl group reagents, methane thiosulfonates (MTS. The changes in reporter reactivity, when cycling rapidly between hyperpolarized and depolarized voltages, enabled determination of the positions of the D4 voltage-sensor and of its rate of movement. Scorpion α-toxin binding impedes D4S4 segment movement during inactivation since the modification rates of R3C in hNav1.4 with methanethiosulfonate (CH3SO2SCH2CH2R, where R = -N(CH33 (+ trimethylammonium, MTSET and benzophenone-4-carboxamidocysteine methanethiosulfonate (BPMTS were slowed ~10-fold in toxin-modified channels. Based upon the different size, hydrophobicity and charge of the two reagents it is unlikely that the change in reactivity is due to direct or indirect blockage of access of this site to reagent in the presence of toxin (Tx, but rather is the result of inability of this segment to move outward to the normal extent and at the normal rate in the toxin-modified channel. Measurements of availability of R3C to internally applied reagent show decreased access (slower rates of thiol reaction providing further evidence for encumbered D4S4 movement in the presence of toxins consistent with the assignment of at least part of the toxin binding site to the region of D4S4 region of the voltage-sensor

  8. Gating mechanism of Kv11.1 (hERG) K+ channels without covalent connection between voltage sensor and pore domains.

    Science.gov (United States)

    de la Peña, Pilar; Domínguez, Pedro; Barros, Francisco

    2018-03-01

    Kv11.1 (hERG, KCNH2) is a voltage-gated potassium channel crucial in setting the cardiac rhythm and the electrical behaviour of several non-cardiac cell types. Voltage-dependent gating of Kv11.1 can be reconstructed from non-covalently linked voltage sensing and pore modules (split channels), challenging classical views of voltage-dependent channel activation based on a S4-S5 linker acting as a rigid mechanical lever to open the gate. Progressive displacement of the split position from the end to the beginning of the S4-S5 linker induces an increasing negative shift in activation voltage dependence, a reduced z g value and a more negative ΔG 0 for current activation, an almost complete abolition of the activation time course sigmoid shape and a slowing of the voltage-dependent deactivation. Channels disconnected at the S4-S5 linker near the S4 helix show a destabilization of the closed state(s). Furthermore, the isochronal ion current mode shift magnitude is clearly reduced in the different splits. Interestingly, the progressive modifications of voltage dependence activation gating by changing the split position are accompanied by a shift in the voltage-dependent availability to a methanethiosulfonate reagent of a Cys introduced at the upper S4 helix. Our data demonstrate for the first time that alterations in the covalent connection between the voltage sensor and the pore domains impact on the structural reorganizations of the voltage sensor domain. Also, they support the hypothesis that the S4-S5 linker integrates signals coming from other cytoplasmic domains that constitute either an important component or a crucial regulator of the gating machinery in Kv11.1 and other KCNH channels.

  9. Combinatorial mutagenesis of the voltage-sensing domain enables the optical resolution of action potentials firing at 60 Hz by a genetically encoded fluorescent sensor of membrane potential.

    Science.gov (United States)

    Piao, Hong Hua; Rajakumar, Dhanarajan; Kang, Bok Eum; Kim, Eun Ha; Baker, Bradley J

    2015-01-07

    ArcLight is a genetically encoded fluorescent voltage sensor using the voltage-sensing domain of the voltage-sensing phosphatase from Ciona intestinalis that gives a large but slow-responding optical signal in response to changes in membrane potential (Jin et al., 2012). Fluorescent voltage sensors using the voltage-sensing domain from other species give faster yet weaker optical signals (Baker et al., 2012; Han et al., 2013). Sequence alignment of voltage-sensing phosphatases from different species revealed conserved polar and charged residues at 7 aa intervals in the S1-S3 transmembrane segments of the voltage-sensing domain, suggesting potential coil-coil interactions. The contribution of these residues to the voltage-induced optical signal was tested using a cassette mutagenesis screen by flanking each transmembrane segment with unique restriction sites to allow for the testing of individual mutations in each transmembrane segment, as well as combinations in all four transmembrane segments. Addition of a counter charge in S2 improved the kinetics of the optical response. A double mutation in the S4 domain dramatically reduced the slow component of the optical signal seen in ArcLight. Combining that double S4 mutant with the mutation in the S2 domain yielded a probe with kinetics voltage-sensing domain could potentially lead to fluorescent sensors capable of optically resolving neuronal inhibition and subthreshold synaptic activity. Copyright © 2015 the authors 0270-6474/15/350372-15$15.00/0.

  10. An automatic method to analyze the Capacity-Voltage and Current-Voltage curves of a sensor

    CERN Document Server

    AUTHOR|(CDS)2261553

    2017-01-01

    An automatic method to perform Capacity versus voltage analysis for all kind of silicon sensor is provided. It successfully calculates the depletion voltage to unirradiated and irradiated sensors, and with measurements with outliers or reaching breakdown. It is built using C++ and using ROOT trees with an analogous skeleton as TRICS, where the data as well as the results of the ts are saved, to make further analysis.

  11. Contributions of counter-charge in a potassium channel voltage-sensor domain

    DEFF Research Database (Denmark)

    Pless, Stephan Alexander; Galpin, Jason D; Niciforovic, Ana P

    2011-01-01

    Voltage-sensor domains couple membrane potential to conformational changes in voltage-gated ion channels and phosphatases. Highly coevolved acidic and aromatic side chains assist the transfer of cationic side chains across the transmembrane electric field during voltage sensing. We investigated...... the functional contribution of negative electrostatic potentials from these residues to channel gating and voltage sensing with unnatural amino acid mutagenesis, electrophysiology, voltage-clamp fluorometry and ab initio calculations. The data show that neutralization of two conserved acidic side chains...

  12. Common molecular determinants of tarantula huwentoxin-IV inhibition of Na+ channel voltage sensors in domains II and IV.

    Science.gov (United States)

    Xiao, Yucheng; Jackson, James O; Liang, Songping; Cummins, Theodore R

    2011-08-05

    The voltage sensors of domains II and IV of sodium channels are important determinants of activation and inactivation, respectively. Animal toxins that alter electrophysiological excitability of muscles and neurons often modify sodium channel activation by selectively interacting with domain II and inactivation by selectively interacting with domain IV. This suggests that there may be substantial differences between the toxin-binding sites in these two important domains. Here we explore the ability of the tarantula huwentoxin-IV (HWTX-IV) to inhibit the activity of the domain II and IV voltage sensors. HWTX-IV is specific for domain II, and we identify five residues in the S1-S2 (Glu-753) and S3-S4 (Glu-811, Leu-814, Asp-816, and Glu-818) regions of domain II that are crucial for inhibition of activation by HWTX-IV. These data indicate that a single residue in the S3-S4 linker (Glu-818 in hNav1.7) is crucial for allowing HWTX-IV to interact with the other key residues and trap the voltage sensor in the closed configuration. Mutagenesis analysis indicates that the five corresponding residues in domain IV are all critical for endowing HWTX-IV with the ability to inhibit fast inactivation. Our data suggest that the toxin-binding motif in domain II is conserved in domain IV. Increasing our understanding of the molecular determinants of toxin interactions with voltage-gated sodium channels may permit development of enhanced isoform-specific voltage-gating modifiers.

  13. Non-contact current and voltage sensor having detachable housing incorporating multiple ferrite cylinder portions

    Science.gov (United States)

    Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C.; Schappert, Michael A.

    2016-04-26

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing formed from two portions that mechanically close around the wire and that contain the current and voltage sensors. The current sensor is a ferrite cylinder formed from at least three portions that form the cylinder when the sensor is closed around the wire with a hall effect sensor disposed in a gap between two of the ferrite portions along the circumference to measure current. A capacitive plate or wire is disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  14. A novel NaV1.5 voltage sensor mutation associated with severe atrial and ventricular arrhythmias.

    Science.gov (United States)

    Wang, Hong-Gang; Zhu, Wandi; Kanter, Ronald J; Silva, Jonathan R; Honeywell, Christina; Gow, Robert M; Pitt, Geoffrey S

    2016-03-01

    Inherited autosomal dominant mutations in cardiac sodium channels (NaV1.5) cause various arrhythmias, such as long QT syndrome and Brugada syndrome. Although dozens of mutations throughout the protein have been reported, there are few reported mutations within a voltage sensor S4 transmembrane segment and few that are homozygous. Here we report analysis of a novel lidocaine-sensitive recessive mutation, p.R1309H, in the NaV1.5 DIII/S4 voltage sensor in a patient with a complex arrhythmia syndrome. We expressed the wild type or mutant NaV1.5 heterologously for analysis with the patch-clamp and voltage clamp fluorometry (VCF) techniques. p.R1309H depolarized the voltage-dependence of activation, hyperpolarized the voltage-dependence of inactivation, and slowed recovery from inactivation, thereby reducing the channel availability at physiologic membrane potentials. Additionally, p.R1309H increased the "late" Na(+) current. The location of the mutation in DIIIS4 prompted testing for a gating pore current. We observed an inward current at hyperpolarizing voltages that likely exacerbates the loss-of-function defects at resting membrane potentials. Lidocaine reduced the gating pore current. The p.R1309H homozygous NaV1.5 mutation conferred both gain-of-function and loss-of-function effects on NaV1.5 channel activity. Reduction of a mutation-induced gating pore current by lidocaine suggested a therapeutic mechanism. Copyright © 2016 Elsevier Ltd. All rights reserved.

  15. The free energy barrier for arginine gating charge translation is altered by mutations in the voltage sensor domain.

    Directory of Open Access Journals (Sweden)

    Christine S Schwaiger

    Full Text Available The gating of voltage-gated ion channels is controlled by the arginine-rich S4 helix of the voltage-sensor domain moving in response to an external potential. Recent studies have suggested that S4 moves in three to four steps to open the conducting pore, thus visiting several intermediate conformations during gating. However, the exact conformational changes are not known in detail. For instance, it has been suggested that there is a local rotation in the helix corresponding to short segments of a 3(10-helix moving along S4 during opening and closing. Here, we have explored the energetics of the transition between the fully open state (based on the X-ray structure and the first intermediate state towards channel closing (C1, modeled from experimental constraints. We show that conformations within 3 Å of the X-ray structure are obtained in simulations starting from the C1 model, and directly observe the previously suggested sliding 3(10-helix region in S4. Through systematic free energy calculations, we show that the C1 state is a stable intermediate conformation and determine free energy profiles for moving between the states without constraints. Mutations indicate several residues in a narrow hydrophobic band in the voltage sensor contribute to the barrier between the open and C1 states, with F233 in the S2 helix having the largest influence. Substitution for smaller amino acids reduces the transition cost, while introduction of a larger ring increases it, largely confirming experimental activation shift results. There is a systematic correlation between the local aromatic ring rotation, the arginine barrier crossing, and the corresponding relative free energy. In particular, it appears to be more advantageous for the F233 side chain to rotate towards the extracellular side when arginines cross the hydrophobic region.

  16. Voltage-dependent gating in a "voltage sensor-less" ion channel.

    Directory of Open Access Journals (Sweden)

    Harley T Kurata

    2010-02-01

    Full Text Available The voltage sensitivity of voltage-gated cation channels is primarily attributed to conformational changes of a four transmembrane segment voltage-sensing domain, conserved across many levels of biological complexity. We have identified a remarkable point mutation that confers significant voltage dependence to Kir6.2, a ligand-gated channel that lacks any canonical voltage-sensing domain. Similar to voltage-dependent Kv channels, the Kir6.2[L157E] mutant exhibits time-dependent activation upon membrane depolarization, resulting in an outwardly rectifying current-voltage relationship. This voltage dependence is convergent with the intrinsic ligand-dependent gating mechanisms of Kir6.2, since increasing the membrane PIP2 content saturates Po and eliminates voltage dependence, whereas voltage activation is more dramatic when channel Po is reduced by application of ATP or poly-lysine. These experiments thus demonstrate an inherent voltage dependence of gating in a "ligand-gated" K+ channel, and thereby provide a new view of voltage-dependent gating mechanisms in ion channels. Most interestingly, the voltage- and ligand-dependent gating of Kir6.2[L157E] is highly sensitive to intracellular [K+], indicating an interaction between ion permeation and gating. While these two key features of channel function are classically dealt with separately, the results provide a framework for understanding their interaction, which is likely to be a general, if latent, feature of the superfamily of cation channels.

  17. Mapping of Residues Forming the Voltage Sensor of the Voltage-Dependent Anion-Selective Channel

    Science.gov (United States)

    Thomas, Lorie; Blachly-Dyson, Elizabeth; Colombini, Marco; Forte, Michael

    1993-06-01

    Voltage-gated ion-channel proteins contain "voltage-sensing" domains that drive the conformational transitions between open and closed states in response to changes in transmembrane voltage. We have used site-directed mutagenesis to identify residues affecting the voltage sensitivity of a mitochondrial channel, the voltage-dependent anion-selective channel (VDAC). Although charge changes at many sites had no effect, at other sites substitutions that increased positive charge also increased the steepness of voltage dependance and substitutions that decreased positive charge decreased voltage dependance by an appropriate amount. In contrast to the plasma membrane K^+ and Na^+ channels, these residues are distributed over large parts of the VDAC protein. These results have been used to define the conformational transitions that accompany voltage gating of an ion channel. This gating mechanism requires the movement of large portions of the VDAC protein through the membrane.

  18. Study and Experiment on Non-Contact Voltage Sensor Suitable for Three-Phase Transmission Line.

    Science.gov (United States)

    Zhou, Qiang; He, Wei; Xiao, Dongping; Li, Songnong; Zhou, Kongjun

    2015-12-30

    A voltage transformer, as voltage signal detection equipment, plays an important role in a power system. Presently, more and more electric power systems are adopting potential transformer and capacitance voltage transformers. Transformers are often large in volume and heavyweight, their insulation design is difficult, and an iron core or multi-grade capacitance voltage division structure is generally adopted. As a result, the detection accuracy of transformer is reduced, a huge phase difference exists between detection signal and voltage signal to be measured, and the detection signal cannot accurately and timely reflect the change of conductor voltage signal to be measured. By aiming at the current problems of electric transformation, based on electrostatic induction principle, this paper designed a non-contact voltage sensor and gained detection signal of the sensor through electrostatic coupling for the electric field generated by electric charges of the conductor to be measured. The insulation structure design of the sensor is simple and its volume is small; phase difference of sensor measurement is effectively reduced through optimization design of the electrode; and voltage division ratio and measurement accuracy are increased. The voltage sensor was tested on the experimental platform of simulating three-phase transmission line. According to the result, the designed non-contact voltage sensor can realize accurate and real-time measurement for the conductor voltage. It can be applied to online monitoring for the voltage of three-phase transmission line or three-phase distribution network line, which is in accordance with the development direction of the smart grid.

  19. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

    CERN Document Server

    Benoit, M.

    2016-07-21

    Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

  20. Three phase voltage measurements with simple open air sensors

    NARCIS (Netherlands)

    Heesch, van E.J.M.; Caspers, R.; Gulickx, P.F.M.; Jacobs, G.A.P.; Kersten, W.F.J.; Laan, van der P.C.T.

    1991-01-01

    A low cost, easy to install high-voltage measuring system is described for open air substations and overhead lines. Based on the Differentiating/Integrating (D/I) principle, three free-standing capacitive pickup electrodes are used to sense the three phase to ground voltages. Apart from the

  1. Induction sensor for measuring the accelerating voltage in an iron-free induction accelerator

    International Nuclear Information System (INIS)

    Bol'nykh, N.S.; Il'in, Yu.M.; Kostyushok, A.A.; Suvorov, V.A.

    1987-01-01

    An inductive sensor is described for measuring the amplitude and form of the accelerating-voltage pulse in the storage coils in a radial iron-free linear induction accelerator. The sensor does not respond to interference from external fields and does not require adjustment after calibration

  2. Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my [Centre of Innovative Nanostructures and Nanodevices, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750 Tronoh, Perak (Malaysia)

    2014-03-24

    Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

  3. The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider.

    Science.gov (United States)

    Garnacho, Fernando; Khamlichi, Abderrahim; Rovira, Jorge

    2017-11-17

    The most important advantage of voltage dividers over traditional voltage transformers is that voltage dividers do not have an iron core with non-linear hysteresis characteristics. The voltage dividers have a linear behavior with respect to over-voltages and a flat frequency response larger frequency range. The weak point of a voltage divider is the influence of external high-voltage (HV) and earth parts in its vicinity. Electrical fields arising from high voltages in neighboring phases and from ground conductors and structures are one of their main sources for systematic measurement errors. This paper describes a shielding voltage divider for a 24 kV medium voltage network insulated in SF6 composed of two resistive-capacitive dividers, one integrated within the other, achieving a flat frequency response up to 10 kHz for ratio error and up to 5 kHz for phase displacement error. The metal shielding improves its immunity against electric and magnetic fields. The characterization performed on the built-in voltage sensor shows an accuracy class of 0.2 for a frequency range from 20 Hz to 5 kHz and a class of 0.5 for 1 Hz up to 20 Hz. A low temperature effect is also achieved for operation conditions of MV power grids.

  4. Optical fiber sensor of partial discharges in High Voltage DC experiments

    Science.gov (United States)

    Búa-Núñez, I.; Azcárraga-Ramos, C. G.; Posada-Román, J. E.; Garcia-Souto, J. A.

    2014-05-01

    A setup simulating High Voltage DC (HVDC) transformers barriers was developed to demonstrate the effectiveness of an optical fiber (OF) sensor in detecting partial discharges (PD) under these peculiar conditions. Different PD detection techniques were compared: electrical methods, and acoustic methods. Standard piezoelectric sensors (R15i-AST) and the above mentioned OF sensors were used for acoustic detection. The OF sensor was able to detect PD acoustically with a sensitivity better than the other detection methods. The multichannel instrumentation system was tested in real HVDC conditions with the aim of analyzing the behavior of the insulation (mineral oil/pressboard).

  5. High Voltage Coil Current Sensor for DC-DC Converters Employing DDCC

    Directory of Open Access Journals (Sweden)

    M. Drinovsky

    2015-12-01

    Full Text Available Current sensor is an integral part of every switching converter. It is used for over-current protection, regulation and in case of multiphase converters for balancing. A new high voltage current sensor for coil-based current sensing in DC-DC converters is presented. The sensor employs DDCC with high voltage input stage and gain trimming. The circuit has been simulated and implemented in 0.35 um BCD technology as part of a multiphase DC-DC converter where its function has been verified. The circuit is able to sustain common mode voltage on the input up to 40 V, it occupies 0.387*0.345 mm2 and consumes 3.2 mW typically.

  6. Gating transitions in the selectivity filter region of a sodium channel are coupled to the domain IV voltage sensor.

    Science.gov (United States)

    Capes, Deborah L; Arcisio-Miranda, Manoel; Jarecki, Brian W; French, Robert J; Chanda, Baron

    2012-02-14

    Voltage-dependent ion channels are crucial for generation and propagation of electrical activity in biological systems. The primary mechanism for voltage transduction in these proteins involves the movement of a voltage-sensing domain (D), which opens a gate located on the cytoplasmic side. A distinct conformational change in the selectivity filter near the extracellular side has been implicated in slow inactivation gating, which is important for spike frequency adaptation in neural circuits. However, it remains an open question whether gating transitions in the selectivity filter region are also actuated by voltage sensors. Here, we examine conformational coupling between each of the four voltage sensors and the outer pore of a eukaryotic voltage-dependent sodium channel. The voltage sensors of these sodium channels are not structurally symmetric and exhibit functional specialization. To track the conformational rearrangements of individual voltage-sensing domains, we recorded domain-specific gating pore currents. Our data show that, of the four voltage sensors, only the domain IV voltage sensor is coupled to the conformation of the selectivity filter region of the sodium channel. Trapping the outer pore in a particular conformation with a high-affinity toxin or disulphide crossbridge impedes the return of this voltage sensor to its resting conformation. Our findings directly establish that, in addition to the canonical electromechanical coupling between voltage sensor and inner pore gates of a sodium channel, gating transitions in the selectivity filter region are also coupled to the movement of a voltage sensor. Furthermore, our results also imply that the voltage sensor of domain IV is unique in this linkage and in the ability to initiate slow inactivation in sodium channels.

  7. Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

    International Nuclear Information System (INIS)

    Betta, G.-F. Dalla; Mendicino, R.; Povoli, M.; Sultan, D.M.S.; Ayllon, N.; Hoeferkamp, M.; McDuff, H.; Seidel, S.; Boscardin, M.; Zorzi, N.; Mattiazzo, S.

    2016-01-01

    We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

  8. Bio-Inspired Carbon Monoxide Sensors with Voltage-Activated Sensitivity

    KAUST Repository

    Savagatrup, Suchol

    2017-09-27

    Carbon monoxide (CO) outcompetes oxygen when binding to the iron center of hemeproteins, leading to a reduction in blood oxygen level and acute poisoning. Harvesting the strong specific interaction between CO and the iron porphyrin provides a highly selective and customizable sensor. We report the development of chemiresistive sensors with voltage-activated sensitivity for the detection of CO comprising iron porphyrin and functionalized single-walled carbon nanotubes (F-SWCNTs). Modulation of the gate voltage offers a predicted extra dimension for sensing. Specifically, the sensors show a significant increase in sensitivity toward CO when negative gate voltage is applied. The dosimetric sensors are selective to ppm levels of CO and functional in air. UV/Vis spectroscopy, differential pulse voltammetry, and density functional theory reveal that the in situ reduction of FeIII to FeII enhances the interaction between the F-SWCNTs and CO. Our results illustrate a new mode of sensors wherein redox active recognition units are voltage-activated to give enhanced and highly specific responses.

  9. A Fiber-Optic Sensor for Acoustic Emission Detection in a High Voltage Cable System

    Science.gov (United States)

    Zhang, Tongzhi; Pang, Fufei; Liu, Huanhuan; Cheng, Jiajing; Lv, Longbao; Zhang, Xiaobei; Chen, Na; Wang, Tingyun

    2016-01-01

    We have proposed and demonstrated a Michelson interferometer-based fiber sensor for detecting acoustic emission generated from the partial discharge (PD) of the accessories of a high-voltage cable system. The developed sensor head is integrated with a compact and relatively high sensitivity cylindrical elastomer. Such a sensor has a broadband frequency response and a relatively high sensitivity in a harsh environment under a high-voltage electric field. The design and fabrication of the sensor head integrated with the cylindrical elastomer is described, and a series of experiments was conducted to evaluate the sensing performance. The experimental results demonstrate that the sensitivity of our developed sensor for acoustic detection of partial discharges is 1.7 rad/(m⋅Pa). A high frequency response up to 150 kHz is achieved. Moreover, the relatively high sensitivity for the detection of PD is verified in both the laboratory environment and gas insulated switchgear. The obtained results show the great potential application of a Michelson interferometer-based fiber sensor integrated with a cylindrical elastomer for in-situ monitoring high-voltage cable accessories for safety work. PMID:27916900

  10. A Fiber-Optic Sensor for Acoustic Emission Detection in a High Voltage Cable System

    Directory of Open Access Journals (Sweden)

    Tongzhi Zhang

    2016-11-01

    Full Text Available We have proposed and demonstrated a Michelson interferometer-based fiber sensor for detecting acoustic emission generated from the partial discharge (PD of the accessories of a high-voltage cable system. The developed sensor head is integrated with a compact and relatively high sensitivity cylindrical elastomer. Such a sensor has a broadband frequency response and a relatively high sensitivity in a harsh environment under a high-voltage electric field. The design and fabrication of the sensor head integrated with the cylindrical elastomer is described, and a series of experiments was conducted to evaluate the sensing performance. The experimental results demonstrate that the sensitivity of our developed sensor for acoustic detection of partial discharges is 1.7 rad / ( m ⋅ Pa . A high frequency response up to 150 kHz is achieved. Moreover, the relatively high sensitivity for the detection of PD is verified in both the laboratory environment and gas insulated switchgear. The obtained results show the great potential application of a Michelson interferometer-based fiber sensor integrated with a cylindrical elastomer for in-situ monitoring high-voltage cable accessories for safety work.

  11. PIEZOELECTRIC WAVEGUIDE SENSOR FOR MEASURING PULSE PRESSURE IN CLOSED LIQUID VOLUMES AT HIGH VOLTAGE ELECTRIC DISCHARGE

    Directory of Open Access Journals (Sweden)

    V. G. Zhekul

    2017-10-01

    Full Text Available Purpose. Investigations of the characteristics of pressure waves presuppose the registration of the total profile of the pressure wave at a given point in space. For these purposes, various types of «pressure to the electrical signal» transmitters (sensors are used. Most of the common sensors are unsuitable for measuring the pulse pressure in a closed water volume at high hydrostatic pressures, in particular to study the effect of a powerful high-voltage pulse discharge on increasing the inflow of minerals and drinking water in wells. The purpose of the work was to develop antijamming piezoelectric waveguide sensor for measuring pulse pressure at a close distance from a high-voltage discharge channel in a closed volume of a liquid. Methodology. We have applied the calibration method as used as a secondary standard, the theory of electrical circuits. Results. We have selected the design and the circuit solution of the waveguide pressure sensor. We have developed a waveguide pulse-pressure sensor DTX-1 with a measuring loop. This sensor makes it possible to study the spectral characteristics of pressure waves of high-voltage pulse discharge in closed volumes of liquid at a hydrostatic pressure of up to 20 MPa and a temperature of up to 80 °C. The sensor can be used to study pressure waves with a maximum amplitude value of up to 150 MPa and duration of up to 80 µs. According to the results of the calibration, the sensitivity of the developed sensor DTX-1 with a measuring loop is 0.0346 V/MPa. Originality. We have further developed the theory of designing the waveguide piezoelectric pulse pressure sensors for measuring the pulse pressure at a close distance from a high-voltage discharge channel in a closed fluid volume by controlling the attenuation of the amplitude of the pressure signal. Practical value. We have developed, created, calibrated, used in scientific research waveguide pressure pulse sensors DTX-1. We propose sensors DTX-1 for sale

  12. General Voltage Feedback Circuit Model in the Two-Dimensional Networked Resistive Sensor Array

    Directory of Open Access Journals (Sweden)

    JianFeng Wu

    2015-01-01

    Full Text Available To analyze the feature of the two-dimensional networked resistive sensor array, we firstly proposed a general model of voltage feedback circuits (VFCs such as the voltage feedback non-scanned-electrode circuit, the voltage feedback non-scanned-sampling-electrode circuit, and the voltage feedback non-scanned-sampling-electrode circuit. By analyzing the general model, we then gave a general mathematical expression of the effective equivalent resistor of the element being tested in VFCs. Finally, we evaluated the features of VFCs with simulation and test experiment. The results show that the expression is applicable to analyze the VFCs’ performance of parameters such as the multiplexers’ switch resistors, the nonscanned elements, and array size.

  13. Plastic Muscles TM as lightweight, low voltage actuators and sensors

    Science.gov (United States)

    Bennett, Matthew; Leo, Donald; Duncan, Andrew

    2008-03-01

    Using proprietary technology, Discover Technologies has developed ionomeric polymer transducers that are capable of long-term operation in air. These "Plastic Muscle TM" transducers are useful as soft distributed actuators and sensors and have a wide range of applications in the aerospace, robotics, automotive, electronics, and biomedical industries. Discover Technologies is developing novel fabrication methods that allow the Plastic Muscles TM to be manufactured on a commercial scale. The Plastic Muscle TM transducers are capable of generating more than 0.5% bending strain at a peak strain rate of over 0.1 %/s with a 3 V input. Because the Plastic Muscles TM use an ionic liquid as a replacement solvent for water, they are able to operate in air for long periods of time. Also, the Plastic Muscles TM do not exhibit the characteristic "back relaxation" phenomenon that is common in water-swollen devices. The elastic modulus of the Plastic Muscle TM transducers is estimated to be 200 MPa and the maximum generated stress is estimated to be 1 MPa. Based on these values, the maximum blocked force at the tip of a 6 mm wide, 35 mm long actuator is estimated to be 19 mN. Modeling of the step response with an exponential series reveals nonlinearity in the transducers' behavior.

  14. ''SensArray'' voltage sensor analysis in an inductively coupled plasma

    International Nuclear Information System (INIS)

    Titus, M. J.; Hsu, C. C.; Graves, D. B.

    2010-01-01

    A commercially manufactured PlasmaVolt sensor wafer was studied in an inductively coupled plasma reactor in an effort to validate sensor measurements. A pure Ar plasma at various powers (25-420 W), for a range of pressures (10-80 mT), and bias voltages (0-250 V) was utilized. A numerical sheath simulation was simultaneously developed in order to interpret experimental results. It was found that PlasmaVolt sensor measurements are proportional to the rf-current through the sheath. Under conditions such that the sheath impedance is dominantly capacitive, sensor measurements follow a scaling law derived from the inhomogeneous sheath model of Lieberman and Lichtenberg, [Principles of Plasma Discharges and Materials Processing (Wiley, New York, 2005)]. Under these conditions, sensor measurements are proportional to the square root of the plasma density at the plasma-sheath interface, the one-fourth root of the electron temperature, and the one-fourth root of the rf bias voltage. When the sheath impedance becomes increasingly resistive, the sensor measurements deviate from the scaling law and tend to be directly proportional to the plasma density. The measurements and numerical sheath simulation demonstrate the scaling behavior as a function of changing sheath impedance for various plasma conditions.

  15. Enzyme domain affects the movement of the voltage sensor in ascidian and zebrafish voltage-sensing phosphatases.

    Science.gov (United States)

    Hossain, Md Israil; Iwasaki, Hirohide; Okochi, Yoshifumi; Chahine, Mohamed; Higashijima, Shinichi; Nagayama, Kuniaki; Okamura, Yasushi

    2008-06-27

    The ascidian voltage-sensing phosphatase (Ci-VSP) consists of the voltage sensor domain (VSD) and a cytoplasmic phosphatase region that has significant homology to the phosphatase and tensin homolog deleted on chromosome TEN (PTEN). The phosphatase activity of Ci-VSP is modified by the conformational change of the VSD. In many proteins, two protein modules are bidirectionally coupled, but it is unknown whether the phosphatase domain could affect the movement of the VSD in VSP. We addressed this issue by whole-cell patch recording of gating currents from a teleost VSP (Dr-VSP) cloned from Danio rerio expressed in tsA201 cells. Replacement of a critical cysteine residue, in the phosphatase active center of Dr-VSP, by serine sharpened both ON- and OFF-gating currents. Similar changes were produced by treatment with phosphatase inhibitors, pervanadate and orthovanadate, that constitutively bind to cysteine in the active catalytic center of phosphatases. The distinct kinetics of gating currents dependent on enzyme activity were not because of altered phosphatidylinositol 4,5-bisphosphate levels, because the kinetics of gating current did not change by depletion of phosphatidylinositol 4,5-bisphosphate, as reported by coexpressed KCNQ2/3 channels. These results indicate that the movement of the VSD is influenced by the enzymatic state of the cytoplasmic domain, providing an important clue for understanding mechanisms of coupling between the VSD and its effector.

  16. Sensing voltage across lipid membranes

    Science.gov (United States)

    Swartz, Kenton J.

    2009-01-01

    The detection of electrical potentials across lipid bilayers by specialized membrane proteins is required for many fundamental cellular processes such as the generation and propagation of nerve impulses. These membrane proteins possess modular voltage-sensing domains, a notable example being the S1-S4 domains of voltage-activated ion channels. Ground-breaking structural studies on these domains explain how voltage sensors are designed and reveal important interactions with the surrounding lipid membrane. Although further structures are needed to fully understand the conformational changes that occur during voltage sensing, the available data help to frame several key concepts that are fundamental to the mechanism of voltage sensing. PMID:19092925

  17. Voltage transients in thin-film InSb Hall sensor

    Directory of Open Access Journals (Sweden)

    Alexey Bardin

    Full Text Available The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μV on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films. 2000 MSC: 41A05, 41A10, 65D05, 65D17, Keywords: Thin-films, Semiconductors, Hall sensor, InSb, thermo-e.m.f.

  18. Simple mechanical parameters identification of induction machine using voltage sensor only

    International Nuclear Information System (INIS)

    Horen, Yoram; Strajnikov, Pavel; Kuperman, Alon

    2015-01-01

    Highlights: • A simple low cost algorithm for induction motor mechanical parameters estimation is proposed. • Voltage sensing only is performed; speed sensor is not required. • The method is suitable for both wound rotor and squirrel cage motors. - Abstract: A simple low cost algorithm for induction motor mechanical parameters estimation without speed sensor is presented in this paper. Estimation is carried out by recording stator terminal voltage during natural braking and subsequent offline curve fitting. The algorithm allows accurately reconstructing mechanical time constant as well as loading torque speed dependency. Although the mathematical basis of the presented method is developed for wound rotor motors, it is shown to be suitable for squirrel cage motors as well. The algorithm is first tested by reconstruction of simulation model parameters and then by processing measurement results of several motors. Simulation and experimental results support the validity of the proposed algorithm

  19. High-fidelity optical reporting of neuronal electrical activity with an ultrafast fluorescent voltage sensor

    Science.gov (United States)

    St-Pierre, François; Marshall, Jesse D; Yang, Ying; Gong, Yiyang; Schnitzer, Mark J; Lin, Michael Z

    2015-01-01

    Accurate optical reporting of electrical activity in genetically defined neuronal populations is a long-standing goal in neuroscience. Here we describe Accelerated Sensor of Action Potentials 1 (ASAP1), a novel voltage sensor design in which a circularly permuted green fluorescent protein is inserted within an extracellular loop of a voltage-sensing domain, rendering fluorescence responsive to membrane potential. ASAP1 demonstrates on- and off- kinetics of 2.1 and 2.0 ms, reliably detects single action potentials and subthreshold potential changes, and tracks trains of action potential waveforms up to 200 Hz in single trials. With a favorable combination of brightness, dynamic range, and speed, ASAP1 enables continuous monitoring of membrane potential in neurons at KHz frame rates using standard epifluorescence microscopy. PMID:24755780

  20. A novel tarantula toxin stabilizes the deactivated voltage sensor of bacterial sodium channel.

    Science.gov (United States)

    Tang, Cheng; Zhou, Xi; Nguyen, Phuong Tran; Zhang, Yunxiao; Hu, Zhaotun; Zhang, Changxin; Yarov-Yarovoy, Vladimir; DeCaen, Paul G; Liang, Songping; Liu, Zhonghua

    2017-07-01

    Voltage-gated sodium channels (Na V s) are activated by transiting the voltage sensor from the deactivated to the activated state. The crystal structures of several bacterial Na V s have captured the voltage sensor module (VSM) in an activated state, but structure of the deactivated voltage sensor remains elusive. In this study, we sought to identify peptide toxins stabilizing the deactivated VSM of bacterial Na V s. We screened fractions from several venoms and characterized a cystine knot toxin called JZTx-27 from the venom of tarantula Chilobrachys jingzhao as a high-affinity antagonist of the prokaryotic Na V s Ns V Ba (nonselective voltage-gated Bacillus alcalophilus ) and NaChBac (bacterial sodium channel from Bacillus halodurans ) (IC 50 = 112 nM and 30 nM, respectively). JZTx-27 was more efficacious at weaker depolarizing voltages and significantly slowed the activation but accelerated the deactivation of Ns V Ba, whereas the local anesthetic drug lidocaine was shown to antagonize Ns V Ba without affecting channel gating. Mutation analysis confirmed that JZTx-27 bound to S3-4 linker of Ns V Ba, with F98 being the critical residue in determining toxin affinity. All electrophysiological data and in silico analysis suggested that JZTx-27 trapped VSM of Ns V Ba in one of the deactivated states. In mammalian Na V s, JZTx-27 preferably inhibited the inactivation of Na V 1.5 by targeting the fourth transmembrane domain. To our knowledge, this is the first report of peptide antagonist for prokaryotic Na V s. More important, we proposed that JZTx-27 stabilized the Ns V Ba VSM in the deactivated state and may be used as a probe to determine the structure of the deactivated VSM of Na V s.-Tang, C., Zhou, X., Nguyen, P. T., Zhang, Y., Hu, Z., Zhang, C., Yarov-Yarovoy, V., DeCaen, P. G., Liang, S., Liu, Z. A novel tarantula toxin stabilizes the deactivated voltage sensor of bacterial sodium channel. © FASEB.

  1. Optimal dynamic voltage scaling for wireless sensor nodes with real-time constraints

    Science.gov (United States)

    Cassandras, Christos G.; Zhuang, Shixin

    2005-11-01

    Sensors are increasingly embedded in manufacturing systems and wirelessly networked to monitor and manage operations ranging from process and inventory control to tracking equipment and even post-manufacturing product monitoring. In building such sensor networks, a critical issue is the limited and hard to replenish energy in the devices involved. Dynamic voltage scaling is a technique that controls the operating voltage of a processor to provide desired performance while conserving energy and prolonging the overall network's lifetime. We consider such power-limited devices processing time-critical tasks which are non-preemptive, aperiodic and have uncertain arrival times. We treat voltage scaling as a dynamic optimization problem whose objective is to minimize energy consumption subject to hard or soft real-time execution constraints. In the case of hard constraints, we build on prior work (which engages a voltage scaling controller at task completion times) by developing an intra-task controller that acts at all arrival times of incoming tasks. We show that this optimization problem can be decomposed into two simpler ones whose solution leads to an algorithm that does not actually require solving any nonlinear programming problems. In the case of soft constraints, this decomposition must be partly relaxed, but it still leads to a scalable (linear in the number of tasks) algorithm. Simulation results are provided to illustrate performance improvements in systems with intra-task controllers compared to uncontrolled systems or those using inter-task control.

  2. Induction of divalent cation permeability by heterologous expression of a voltage sensor domain.

    Science.gov (United States)

    Arima, Hiroki; Tsutsui, Hidekazu; Sakamoto, Ayako; Yoshida, Manabu; Okamura, Yasushi

    2018-01-06

    The voltage sensor domain (VSD) is a protein domain that confers sensitivity to membrane potential in voltage-gated ion channels as well as the voltage-sensing phosphatase. Although VSDs have long been considered to function as regulatory units acting on adjacent effectors, recent studies have revealed the existence of direct ion permeation paths in some mutated VSDs and in the voltage-gated proton channel. In this study, we show that calcium currents are evoked upon membrane hyperpolarization in cells expressing a VSD derived from an ascidian voltage-gated ion channel superfamily. Unlike the previously reported omega-pore in the Shaker K + channel and rNav1.4, mutations are not required. From electrophysiological experiments in heterologous expression systems, we found that the conductance is directly mediated by the VSD itself and is carried by both monovalent and divalent cations. This is the first report of divalent cation permeation through a VSD-like structure. Copyright © 2018 Elsevier B.V. All rights reserved.

  3. Voltage transients in thin-film InSb Hall sensor

    Science.gov (United States)

    Bardin, Alexey; Ignatjev, Vyacheslav; Orlov, Andrey; Perchenko, Sergey

    The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μ V on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films.

  4. Optimal power and performance trade-offs for dynamic voltage scaling in power management based wireless sensor node

    Directory of Open Access Journals (Sweden)

    Anuradha Pughat

    2016-09-01

    Full Text Available Dynamic voltage scaling contributes to a significant amount of power saving, especially in the energy constrained wireless sensor networks (WSNs. Existing dynamic voltage scaling techniques make the system slower and ignore the event miss rate. This results in degradation of the system performance when there is non-stationary workload at input. The overhead due to transition between voltage level and discrete voltage levels are also the limitations of available dynamic voltage scaling (DVS techniques at sensor node (SN. This paper proposes a workload dependent DVS based MSP430 controller model used for SN. An online gradient estimation technique has been used to optimize power and performance trade-offs. The analytical results are validated with the simulation results obtained using simulation tool “SimEvents” and compared with the available AT9OS8535 controller. Based on the stochastic workload, the controller's input voltage, operational frequency, utilization, and average wait time of events are obtained.

  5. Voltage-dependent gating of KCNH potassium channels lacking a covalent link between voltage-sensing and pore domains

    Science.gov (United States)

    Lörinczi, Éva; Gómez-Posada, Juan Camilo; de La Peña, Pilar; Tomczak, Adam P.; Fernández-Trillo, Jorge; Leipscher, Ulrike; Stühmer, Walter; Barros, Francisco; Pardo, Luis A.

    2015-03-01

    Voltage-gated channels open paths for ion permeation upon changes in membrane potential, but how voltage changes are coupled to gating is not entirely understood. Two modules can be recognized in voltage-gated potassium channels, one responsible for voltage sensing (transmembrane segments S1 to S4), the other for permeation (S5 and S6). It is generally assumed that the conversion of a conformational change in the voltage sensor into channel gating occurs through the intracellular S4-S5 linker that provides physical continuity between the two regions. Using the pathophysiologically relevant KCNH family, we show that truncated proteins interrupted at, or lacking the S4-S5 linker produce voltage-gated channels in a heterologous model that recapitulate both the voltage-sensing and permeation properties of the complete protein. These observations indicate that voltage sensing by the S4 segment is transduced to the channel gate in the absence of physical continuity between the modules.

  6. Voltage-dependent gating of hERG potassium channels

    Directory of Open Access Journals (Sweden)

    Yen May eCheng

    2012-05-01

    Full Text Available The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4-S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-a-go-go related gene, hERG, which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure-function relationships underlying voltage-dependent gating in Shaker and hERG channels, with a focus on the roles of the voltage sensing domain and the S4-S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter charge interactions. More recent data suggest that key amino acid differences in the hERG voltage sensing unit and S4-S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor.

  7. Engineering of a genetically encodable fluorescent voltage sensor exploiting fast Ci-VSP voltage-sensing movements

    DEFF Research Database (Denmark)

    Lundby, Alicia; Mutoh, Hiroki; Dimitrov, Dimitar

    2008-01-01

    Ci-VSP contains a voltage-sensing domain (VSD) homologous to that of voltage-gated potassium channels. Using charge displacement ('gating' current) measurements we show that voltage-sensing movements of this VSD can occur within 1 ms in mammalian membranes. Our analysis lead to development...

  8. Charge immobilization of the voltage sensor in domain IV is independent of sodium current inactivation.

    Science.gov (United States)

    Sheets, Michael F; Hanck, Dorothy A

    2005-02-15

    Recovery from fast inactivation in voltage-dependent Na+ channels is associated with a slow component in the time course of gating charge during repolarization (i.e. charge immobilization), which results from the slow movement of the S4 segments in domains III and IV (S4-DIII and S4-DIV). Previous studies have shown that the non-specific removal of fast inactivation by the proteolytic enzyme pronase eliminated charge immobilization, while the specific removal of fast inactivation (by intracellular MTSET modification of a cysteine substituted for the phenylalanine in the IFM motif, ICMMTSET, in the inactivation particle formed by the linker between domains III and IV) only reduced the amount of charge immobilization by nearly one-half. To investigate the molecular origin of the remaining slow component of charge immobilization we studied the human cardiac Na+ channel (hH1a) in which the outermost arginine in the S4-DIV, which contributes approximately 20% to total gating charge (Qmax), was mutated to a cysteine (R1C-DIV). Gating charge could be fully restored in R1C-DIV by exposure to extracellular MTSEA, a positively charged methanethiosulphonate reagent. The RIC-DIV mutation was combined with ICMMTSET to remove fast inactivation, and the gating currents of R1C-DIV-ICM(MTSET) were recorded before and after modification with MTSEAo. Prior to MTSEAo, the time course of the gating charge during repolarization (off-charge) was best described by a single fast time constant. After MTSEA, the off-charge had both fast and slow components, with the slow component accounting for nearly 35% of Qmax. These results demonstrate that the slow movement of the S4-DIV during repolarization is not dependent upon the normal binding of the inactivation particle.

  9. Wireless Sensor Network for Radiometric Detection and Assessment of Partial Discharge in High-Voltage Equipment

    Science.gov (United States)

    Upton, D. W.; Saeed, B. I.; Mather, P. J.; Lazaridis, P. I.; Vieira, M. F. Q.; Atkinson, R. C.; Tachtatzis, C.; Garcia, M. S.; Judd, M. D.; Glover, I. A.

    2018-03-01

    Monitoring of partial discharge (PD) activity within high-voltage electrical environments is increasingly used for the assessment of insulation condition. Traditional measurement techniques employ technologies that either require off-line installation or have high power consumption and are hence costly. A wireless sensor network is proposed that utilizes only received signal strength to locate areas of PD activity within a high-voltage electricity substation. The network comprises low-power and low-cost radiometric sensor nodes which receive the radiation propagated from a source of PD. Results are reported from several empirical tests performed within a large indoor environment and a substation environment using a network of nine sensor nodes. A portable PD source emulator was placed at multiple locations within the network. Signal strength measured by the nodes is reported via WirelessHART to a data collection hub where it is processed using a location algorithm. The results obtained place the measured location within 2 m of the actual source location.

  10. Co-wound voltage sensor R ampersand D for TPX magnets

    International Nuclear Information System (INIS)

    Chaplin, M.R.; Martovetsky, N.N.; Zbasnik, J.

    1995-01-01

    The Tokamak Physics Experiment (TPX) will be the first tokamak to use superconducting cable-in-conduit-conductors (CICC) in all Poloidal Field (PF) ampersand Toroidal Field (TF) magnets. Conventional quench detection, the measurement of small resistive normal-zone voltages ( 4 kV). In the quench detection design for TPX, we have considered several different locations for internal co-wound voltage sensors in the cable cross-section as the primary mechanism to cancel this inductive noise. The Noise Rejection Experiment (NRE) at LLNL and the Noise Injection Experiment (NIE) at MIT have been designed to evaluate which internal locations will produce the best inductive-noise cancellation, and provide us with experimental data to calibrate analysis codes. The details of the experiments and resulting data are presented

  11. Design of the corona current measurement sensor with wide bandwidth under dc ultra-high-voltage environment

    International Nuclear Information System (INIS)

    Liu, Yingyi; Yuan, Haiwen; Yang, Qinghua; Cui, Yong

    2011-01-01

    The research in the field of corona discharge, which is one of the key technologies, can help us to realize ultra-high-voltage (UHV) power transmission. This paper proposes a new sampling resistance sensor to measure the dc UHV corona current in a wide band. By designing the structural and distributed parameters of the sensor, the UHV dielectric breakdown performance and the wide-band measuring characteristics of the sensor are satisfied. A high-voltage discharge test shows that the designed sensor can work under a 1200 kV dc environment without the occurrence of corona discharge. A frequency characteristic test shows that the measuring bandwidth of the sensor can be improved from the current 4.5 to 20 MHz. The test results in an actual dc UHV transmission line demonstrate that the sensor can accurately measure the corona current under the dc UHV environment

  12. Voltage-Dependent Gating of hERG Potassium Channels

    Science.gov (United States)

    Cheng, Yen May; Claydon, Tom W.

    2012-01-01

    The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv) channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4–S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-à-go-go related gene, hERG), which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure–function relationships underlying activation and deactivation gating in Shaker and hERG channels, with a focus on the roles of the voltage-sensing domain and the S4–S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter-charge interactions. More recent data suggest that key amino acid differences in the hERG voltage-sensing unit and S4–S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor. PMID:22586397

  13. Design, Experiments and Simulation of Voltage Transformers on the Basis of a Differential Input D-dot Sensor

    Directory of Open Access Journals (Sweden)

    Jingang Wang

    2014-07-01

    Full Text Available Currently available traditional electromagnetic voltage sensors fail to meet the measurement requirements of the smart grid, because of low accuracy in the static and dynamic ranges and the occurrence of ferromagnetic resonance attributed to overvoltage and output short circuit. This work develops a new non-contact high-bandwidth voltage measurement system for power equipment. This system aims at the miniaturization and non-contact measurement of the smart grid. After traditional D-dot voltage probe analysis, an improved method is proposed. For the sensor to work in a self-integrating pattern, the differential input pattern is adopted for circuit design, and grounding is removed. To prove the structure design, circuit component parameters, and insulation characteristics, Ansoft Maxwell software is used for the simulation. Moreover, the new probe was tested on a 10 kV high-voltage test platform for steady-state error and transient behavior. Experimental results ascertain that the root mean square values of measured voltage are precise and that the phase error is small. The D-dot voltage sensor not only meets the requirement of high accuracy but also exhibits satisfactory transient response. This sensor can meet the intelligence, miniaturization, and convenience requirements of the smart grid.

  14. Design, experiments and simulation of voltage transformers on the basis of a differential input D-dot sensor.

    Science.gov (United States)

    Wang, Jingang; Gao, Can; Yang, Jie

    2014-07-17

    Currently available traditional electromagnetic voltage sensors fail to meet the measurement requirements of the smart grid, because of low accuracy in the static and dynamic ranges and the occurrence of ferromagnetic resonance attributed to overvoltage and output short circuit. This work develops a new non-contact high-bandwidth voltage measurement system for power equipment. This system aims at the miniaturization and non-contact measurement of the smart grid. After traditional D-dot voltage probe analysis, an improved method is proposed. For the sensor to work in a self-integrating pattern, the differential input pattern is adopted for circuit design, and grounding is removed. To prove the structure design, circuit component parameters, and insulation characteristics, Ansoft Maxwell software is used for the simulation. Moreover, the new probe was tested on a 10 kV high-voltage test platform for steady-state error and transient behavior. Experimental results ascertain that the root mean square values of measured voltage are precise and that the phase error is small. The D-dot voltage sensor not only meets the requirement of high accuracy but also exhibits satisfactory transient response. This sensor can meet the intelligence, miniaturization, and convenience requirements of the smart grid.

  15. Development of a high throughput single-particle screening for inorganic semiconductor nanorods as neural voltage sensor

    Science.gov (United States)

    Kuo, Yung; Park, Kyoungwon; Li, Jack; Ingargiola, Antonino; Park, Joonhyuck; Shvadchak, Volodymyr; Weiss, Shimon

    2017-08-01

    Monitoring membrane potential in neurons requires sensors with minimal invasiveness, high spatial and temporal (sub-ms) resolution, and large sensitivity for enabling detection of sub-threshold activities. While organic dyes and fluorescent proteins have been developed to possess voltage-sensing properties, photobleaching, cytotoxicity, low sensitivity, and low spatial resolution have obstructed further studies. Semiconductor nanoparticles (NPs), as prospective voltage sensors, have shown excellent sensitivity based on Quantum confined Stark effect (QCSE) at room temperature and at single particle level. Both theory and experiment have shown their voltage sensitivity can be increased significantly via material, bandgap, and structural engineering. Based on theoretical calculations, we synthesized one of the optimal candidates for voltage sensors: 12 nm type-II ZnSe/CdS nanorods (NRs), with an asymmetrically located seed. The voltage sensitivity and spectral shift were characterized in vitro using spectrally-resolved microscopy using electrodes grown by thin film deposition, which "sandwich" the NRs. We characterized multiple batches of such NRs and iteratively modified the synthesis to achieve higher voltage sensitivity (ΔF/F> 10%), larger spectral shift (>5 nm), better homogeneity, and better colloidal stability. Using a high throughput screening method, we were able to compare the voltage sensitivity of our NRs with commercial spherical quantum dots (QDs) with single particle statistics. Our method of high throughput screening with spectrally-resolved microscope also provides a versatile tool for studying single particles spectroscopy under field modulation.

  16. Microscopic origin of gating current fluctuations in a potassium channel voltage sensor.

    Science.gov (United States)

    Freites, J Alfredo; Schow, Eric V; White, Stephen H; Tobias, Douglas J

    2012-06-06

    Voltage-dependent ion channels open and close in response to changes in membrane electrical potential due to the motion of their voltage-sensing domains (VSDs). VSD charge displacements within the membrane electric field are observed in electrophysiology experiments as gating currents preceding ionic conduction. The elementary charge motions that give rise to the gating current cannot be observed directly, but appear as discrete current pulses that generate fluctuations in gating current measurements. Here we report direct observation of gating-charge displacements in an atomistic molecular dynamics simulation of the isolated VSD from the KvAP channel in a hydrated lipid bilayer on the timescale (10-μs) expected for elementary gating charge transitions. The results reveal that gating-charge displacements are associated with the water-catalyzed rearrangement of salt bridges between the S4 arginines and a set of conserved acidic side chains on the S1-S3 transmembrane segments in the hydrated interior of the VSD. Copyright © 2012 Biophysical Society. Published by Elsevier Inc. All rights reserved.

  17. Temperature- and supply voltage-independent time references for wireless sensor networks

    CERN Document Server

    De Smedt, Valentijn; Dehaene, Wim

    2015-01-01

    This book investigates the possible circuit solutions to overcome the temperature- and supply voltage-sensitivity of fully-integrated time references for ultra-low-power communication in wireless sensor networks. The authors provide an elaborate theoretical introduction and literature study to enable full understanding of the design challenges and shortcomings of current oscillator implementations.  Furthermore, a closer look to the short-term as well as the long-term frequency stability of integrated oscillators is taken. Next, a design strategy is developed and applied to 5 different oscillator topologies and 1 sensor interface.All 6 implementations are subject to an elaborate study of frequency stability, phase noise, and power consumption. In the final chapter all blocks are compared to the state of the art. The main goals of this book are: • to provide a comprehensive overview of timing issues and solutions in wireless sensor networks; • to gain understanding of all underlying mechanisms by starti...

  18. Scorpion β-toxin interference with NaV channel voltage sensor gives rise to excitatory and depressant modes

    Science.gov (United States)

    Leipold, Enrico; Borges, Adolfo

    2012-01-01

    Scorpion β toxins, peptides of ∼70 residues, specifically target voltage-gated sodium (NaV) channels to cause use-dependent subthreshold channel openings via a voltage–sensor trapping mechanism. This excitatory action is often overlaid by a not yet understood depressant mode in which NaV channel activity is inhibited. Here, we analyzed these two modes of gating modification by β-toxin Tz1 from Tityus zulianus on heterologously expressed NaV1.4 and NaV1.5 channels using the whole cell patch-clamp method. Tz1 facilitated the opening of NaV1.4 in a use-dependent manner and inhibited channel opening with a reversed use dependence. In contrast, the opening of NaV1.5 was exclusively inhibited without noticeable use dependence. Using chimeras of NaV1.4 and NaV1.5 channels, we demonstrated that gating modification by Tz1 depends on the specific structure of the voltage sensor in domain 2. Although residue G658 in NaV1.4 promotes the use-dependent transitions between Tz1 modification phenotypes, the equivalent residue in NaV1.5, N803, abolishes them. Gating charge neutralizations in the NaV1.4 domain 2 voltage sensor identified arginine residues at positions 663 and 669 as crucial for the outward and inward movement of this sensor, respectively. Our data support a model in which Tz1 can stabilize two conformations of the domain 2 voltage sensor: a preactivated outward position leading to NaV channels that open at subthreshold potentials, and a deactivated inward position preventing channels from opening. The results are best explained by a two-state voltage–sensor trapping model in that bound scorpion β toxin slows the activation as well as the deactivation kinetics of the voltage sensor in domain 2. PMID:22450487

  19. Optimization of Pockels electric field in transverse modulated optical voltage sensor

    Science.gov (United States)

    Huang, Yifan; Xu, Qifeng; Chen, Kun-Long; Zhou, Jie

    2018-05-01

    This paper investigates the possibilities of optimizing the Pockels electric field in a transverse modulated optical voltage sensor with a spherical electrode structure. The simulations show that due to the edge effect and the electric field concentrations and distortions, the electric field distributions in the crystal are non-uniform. In this case, a tiny variation in the light path leads to an integral error of more than 0.5%. Moreover, a 2D model cannot effectively represent the edge effect, so a 3D model is employed to optimize the electric field distributions. Furthermore, a new method to attach a quartz crystal to the electro-optic crystal along the electric field direction is proposed to improve the non-uniformity of the electric field. The integral error is reduced therefore from 0.5% to 0.015% and less. The proposed method is simple, practical and effective, and it has been validated by numerical simulations and experimental tests.

  20. Action Potential Dynamics in Fine Axons Probed with an Axonally Targeted Optical Voltage Sensor.

    Science.gov (United States)

    Ma, Yihe; Bayguinov, Peter O; Jackson, Meyer B

    2017-01-01

    The complex and malleable conduction properties of axons determine how action potentials propagate through extensive axonal arbors to reach synaptic terminals. The excitability of axonal membranes plays a major role in neural circuit function, but because most axons are too thin for conventional electrical recording, their properties remain largely unexplored. To overcome this obstacle, we used a genetically encoded hybrid voltage sensor (hVOS) harboring an axonal targeting motif. Expressing this probe in transgenic mice enabled us to monitor voltage changes optically in two populations of axons in hippocampal slices, the large axons of dentate granule cells (mossy fibers) in the stratum lucidum of the CA3 region and the much finer axons of hilar mossy cells in the inner molecular layer of the dentate gyrus. Action potentials propagated with distinct velocities in each type of axon. Repetitive firing broadened action potentials in both populations, but at an intermediate frequency the degree of broadening differed. Repetitive firing also attenuated action potential amplitudes in both mossy cell and granule cell axons. These results indicate that the features of use-dependent action potential broadening, and possible failure, observed previously in large nerve terminals also appear in much finer unmyelinated axons. Subtle differences in the frequency dependences could influence the propagation of activity through different pathways to excite different populations of neurons. The axonally targeted hVOS probe used here opens up the diverse repertoire of neuronal processes to detailed biophysical study.

  1. Chloride Anions Regulate Kinetics but Not Voltage-Sensor Qmax of the Solute Carrier SLC26a5.

    Science.gov (United States)

    Santos-Sacchi, Joseph; Song, Lei

    2016-06-07

    In general, SLC26 solute carriers serve to transport a variety of anions across biological membranes. However, prestin (SLC26a5) has evolved, now serving as a motor protein in outer hair cells (OHCs) of the mammalian inner ear and is required for cochlear amplification, a mechanical feedback mechanism to boost auditory performance. The mechanical activity of the OHC imparted by prestin is driven by voltage and controlled by anions, chiefly intracellular chloride. Current opinion is that chloride anions control the Boltzmann characteristics of the voltage sensor responsible for prestin activity, including Qmax, the total sensor charge moved within the membrane, and Vh, a measure of prestin's operating voltage range. Here, we show that standard narrow-band, high-frequency admittance measures of nonlinear capacitance (NLC), an alternate representation of the sensor's charge-voltage (Q-V) relationship, is inadequate for assessment of Qmax, an estimate of the sum of unitary charges contributed by all voltage sensors within the membrane. Prestin's slow transition rates and chloride-binding kinetics adversely influence these estimates, contributing to the prevalent concept that intracellular chloride level controls the quantity of sensor charge moved. By monitoring charge movement across frequency, using measures of multifrequency admittance, expanded displacement current integration, and OHC electromotility, we find that chloride influences prestin kinetics, thereby controlling charge magnitude at any particular frequency of interrogation. Importantly, however, this chloride dependence vanishes as frequency decreases, with Qmax asymptoting at a level irrespective of the chloride level. These data indicate that prestin activity is significantly low-pass in the frequency domain, with important implications for cochlear amplification. We also note that the occurrence of voltage-dependent charge movements in other SLC26 family members may be hidden by inadequate

  2. Electrophysiological characteristics of a SCN5A voltage sensors mutation R1629Q associated with Brugada syndrome.

    Directory of Open Access Journals (Sweden)

    Zhipeng Zeng

    Full Text Available Brugada syndrome (BrS is an inherited arrhythmogenic syndrome leading to sudden cardiac death, partially associated with autosomal dominant mutations in SCN5A, which encodes the cardiac sodium channel alpha-subunit (Nav1.5. To date some SCN5A mutations related with BrS have been identified in voltage sensor of Nav1.5. Here, we describe a dominant missense mutation (R1629Q localized in the fourth segment of domain IV region (DIV-S4 in a Chinese Han family. The mutation was identified by direct sequencing of SCN5A from the proband's DNA. Co-expression of Wild-type (WT or R1629Q Nav1.5 channel and hβ1 subunit were achieved in human embryonic kidney cells by transient transfection. Sodium currents were recorded using whole cell patch-clamp protocols. No significant changes between WT and R1629Q currents were observed in current density or steady-state activation. However, hyperpolarized shift of steady-state inactivation curve was identified in cells expressing R1629Q channel (WT: V1/2 = -81.1 ± 1.3 mV, n = 13; R1629Q: V1/2 = -101.7 ± 1.2 mV, n = 18. Moreover, R1629Q channel showed enhanced intermediate inactivation and prolonged recovery time from inactivation. In summary, this study reveals that R1629Q mutation causes a distinct loss-of-function of the channel due to alter its electrophysiological characteristics, and facilitates our understanding of biophysical mechanisms of BrS.

  3. Mechanistic Basis for Type 2 Long QT Syndrome Caused by KCNH2 Mutations that Disrupt Conserved Arginine Residue in the Voltage Sensor

    Science.gov (United States)

    McBride, Christie M.; Smith, Ashley M.; Smith, Jennifer L.; Reloj, Allison R.; Velasco, Ellyn J.; Powell, Jonathan; Elayi, Claude S.; Bartos, Daniel C.; Burgess, Don E.

    2013-01-01

    KCNH2 encodes the Kv11.1 channel, which conducts the rapidly activating delayed rectifier K+ current (IKr) in the heart. KCNH2 mutations cause type 2 long QT syndrome (LQT2), which increases the risk for life-threatening ventricular arrhythmias. LQT2 mutations are predicted to prolong the cardiac action potential (AP) by reducing IKr during repolarization. Kv11.1 contains several conserved basic amino acids in the fourth transmembrane segment (S4) of the voltage sensor that are important for normal channel trafficking and gating. This study sought to determine the mechanism(s) by which LQT2 mutations at conserved arginine residues in S4 (R531Q, R531W or R534L) alter Kv11.1 function. Western blot analyses of HEK293 cells transiently expressing R531Q, R531W or R534L suggested that only R534L inhibited Kv11.1 trafficking. Voltage-clamping experiments showed that R531Q or R531W dramatically altered Kv11.1 current (IKv11.1) activation, inactivation, recovery from inactivation and deactivation. Coexpression of wild type (to mimic the patients’ genotypes) mostly corrected the changes in IKv11.1 activation and inactivation, but deactivation kinetics were still faster. Computational simulations using a human ventricular AP model showed that accelerating deactivation rates was sufficient to prolong the AP, but these effects were minimal compared to simply reducing IKr. These are the first data to demonstrate that coexpressing wild type can correct activation and inactivation dysfunction caused by mutations at a critical voltage-sensing residue in Kv11.1. We conclude that some Kv11.1 mutations might accelerate deactivation to cause LQT2 but that the ventricular AP duration is much more sensitive to mutations that decrease IKr. This likely explains why most LQT2 mutations are nonsense or trafficking-deficient. PMID:23546015

  4. Mechanistic basis for type 2 long QT syndrome caused by KCNH2 mutations that disrupt conserved arginine residues in the voltage sensor.

    Science.gov (United States)

    McBride, Christie M; Smith, Ashley M; Smith, Jennifer L; Reloj, Allison R; Velasco, Ellyn J; Powell, Jonathan; Elayi, Claude S; Bartos, Daniel C; Burgess, Don E; Delisle, Brian P

    2013-05-01

    KCNH2 encodes the Kv11.1 channel, which conducts the rapidly activating delayed rectifier K+ current (I Kr) in the heart. KCNH2 mutations cause type 2 long QT syndrome (LQT2), which increases the risk for life-threatening ventricular arrhythmias. LQT2 mutations are predicted to prolong the cardiac action potential (AP) by reducing I Kr during repolarization. Kv11.1 contains several conserved basic amino acids in the fourth transmembrane segment (S4) of the voltage sensor that are important for normal channel trafficking and gating. This study sought to determine the mechanism(s) by which LQT2 mutations at conserved arginine residues in S4 (R531Q, R531W or R534L) alter Kv11.1 function. Western blot analyses of HEK293 cells transiently expressing R531Q, R531W or R534L suggested that only R534L inhibited Kv11.1 trafficking. Voltage-clamping experiments showed that R531Q or R531W dramatically altered Kv11.1 current (I Kv11.1) activation, inactivation, recovery from inactivation and deactivation. Coexpression of wild type (to mimic the patients' genotypes) mostly corrected the changes in I Kv11.1 activation and inactivation, but deactivation kinetics were still faster. Computational simulations using a human ventricular AP model showed that accelerating deactivation rates was sufficient to prolong the AP, but these effects were minimal compared to simply reducing I Kr. These are the first data to demonstrate that coexpressing wild type can correct activation and inactivation dysfunction caused by mutations at a critical voltage-sensing residue in Kv11.1. We conclude that some Kv11.1 mutations might accelerate deactivation to cause LQT2 but that the ventricular AP duration is much more sensitive to mutations that decrease I Kr. This likely explains why most LQT2 mutations are nonsense or trafficking-deficient.

  5. Simplified two-fluid current–voltage relation for superconductor transition-edge sensors

    International Nuclear Information System (INIS)

    Wang, Tian-Shun; Chen, Jun-Kang; Zhang, Qing-Ya; Li, Tie-Fu; Liu, Jian-She; Chen, Wei; Zhou, Xingxiang

    2013-01-01

    We propose a simplified current–voltage (IV) relation for the analysis and simulation of superconductor transition-edge sensor (TES) circuits. Compared to the conventional approach based on the effective TES resistance, our expression describes the device behavior more thoroughly covering the superconducting, transitional, and normal-state for TES currents in both directions. We show how to use our IV relation to perform small-signal analysis and derive the device's temperature and current sensitivities based on its physical parameters. We further demonstrate that we can use our IV relation to greatly simplify TES device modeling and make SPICE simulation of TES circuits easily accessible. We present some interesting results as examples of valuable simulations enabled by our IV relation. -- Highlights: •We propose an IV relation for superconductor transition-edge sensors (TES). •We derive the dependence of the sensitivity of TES on its physical parameters. •We use our IV relation for SPICE modeling of TES device. •We present simulation results using device model based on our IV relation

  6. Simplified two-fluid current–voltage relation for superconductor transition-edge sensors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Tian-Shun; Chen, Jun-Kang [Department of Optics and Optical Engineering, University of Science and Technology of China, Hefei City, Anhui Province 230026 (China); Zhang, Qing-Ya; Li, Tie-Fu; Liu, Jian-She [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China); Chen, Wei, E-mail: weichen@tsinghua.edu.cn [Institute of Microelectronics, Tsinghua University, Beijing 100084 (China); Zhou, Xingxiang, E-mail: xizhou@ustc.edu.cn [Department of Optics and Optical Engineering, University of Science and Technology of China, Hefei City, Anhui Province 230026 (China)

    2013-11-21

    We propose a simplified current–voltage (IV) relation for the analysis and simulation of superconductor transition-edge sensor (TES) circuits. Compared to the conventional approach based on the effective TES resistance, our expression describes the device behavior more thoroughly covering the superconducting, transitional, and normal-state for TES currents in both directions. We show how to use our IV relation to perform small-signal analysis and derive the device's temperature and current sensitivities based on its physical parameters. We further demonstrate that we can use our IV relation to greatly simplify TES device modeling and make SPICE simulation of TES circuits easily accessible. We present some interesting results as examples of valuable simulations enabled by our IV relation. -- Highlights: •We propose an IV relation for superconductor transition-edge sensors (TES). •We derive the dependence of the sensitivity of TES on its physical parameters. •We use our IV relation for SPICE modeling of TES device. •We present simulation results using device model based on our IV relation.

  7. Design and experimental investigation of a low-voltage thermoelectric energy harvesting system for wireless sensor nodes

    International Nuclear Information System (INIS)

    Guan, Mingjie; Wang, Kunpeng; Xu, Dazheng; Liao, Wei-Hsin

    2017-01-01

    Highlights: • A thermoelectric energy harvesting system for wireless sensor nodes is designed. • An ultra-low voltage self-startup is implemented. • Maximum power point tracking and low power designs are applied for high efficiency. • Efficiency of 44.2–75.4% is obtained with open-circuit voltage of 84–400 mV. • System efficiency is higher than the commercial BQ25504 converter. - Abstract: A thermoelectric energy harvesting system designed to harvest tens of microwatts to several milliwatts from low-voltage thermoelectric generators is presented in this paper. The proposed system is based-on a two-stage boost scheme with self-startup ability. A maximum power point tracking technique based on the open-circuit voltage is adopted in the boost converter for high efficiency. Experimental results indicate that the proposed system can harvest thermoelectric energy and run a microcontroller unit and a wireless sensor node under low input voltage and power with high efficiency. The harvest system and wireless sensor node can be self-powered with minimum thermoelectric open-circuit voltage as 62 mV and input power of 84 μW. With a self-startup scheme, the proposed system can self-start with a 20 mV input voltage. Low power designs are applied in the system to reduce the quiescent dissipation power. It results in better performance considering the conversion efficiency and self-startup ability compared to commercial boost systems used for thermal energy harvesting.

  8. Mechanism of electromechanical coupling in voltage-gated potassium channels

    Directory of Open Access Journals (Sweden)

    Rikard eBlunck

    2012-09-01

    Full Text Available Voltage-gated ion channels play a central role in the generation of action potentials in the nervous system. They are selective for one type of ion – sodium, calcium or potassium. Voltage-gated ion channels are composed of a central pore that allows ions to pass through the membrane and four peripheral voltage sensing domains that respond to changes in the membrane potential. Upon depolarization, voltage sensors in voltage-gated potassium channels (Kv undergo conformational changes driven by positive charges in the S4 segment and aided by pairwise electrostatic interactions with the surrounding voltage sensor. Structure-function relations of Kv channels have been investigated in detail, and the resulting models on the movement of the voltage sensors now converge to a consensus; the S4 segment undergoes a combined movement of rotation, tilt and vertical displacement in order to bring 3-4 e+ each through the electric field focused in this region. Nevertheless, the mechanism by which the voltage sensor movement leads to pore opening, the electromechanical coupling, is still not fully understood. Thus, recently, electromechanical coupling in different Kv channels has been investigated with a multitude of techniques including electrophysiology, 3D crystal structures, fluorescence spectroscopy and molecular dynamics simulations. Evidently, the S4-S5 linker, the covalent link between the voltage sensor and pore, plays a crucial role. The linker transfers the energy from the voltage sensor movement to the pore domain via an interaction with the S6 C-termini, which are pulled open during gating. In addition, other contact regions have been proposed. This review aims to provide (i an in-depth comparison of the molecular mechanisms of electromechanical coupling in different Kv channels; (ii insight as to how the voltage sensor and pore domain influence one another; and (iii theoretical predictions on the movement of the cytosolic face of the KV channels

  9. Wireless Power Supply via Coupled Magnetic Resonance for on-line Monitoring Wireless Sensor of High-voltage Electrical Equipment

    DEFF Research Database (Denmark)

    Xingkui, Mao; Qisheng, Huang; Yudi, Xiao

    2016-01-01

    On-line monitoring of high-voltage electrical equipment (HV-EE) aiming to detect faults effectively has become crucial to avoid serious accidents. Moreover, highly reliable power supplies are the key component for the wireless sensors equipped in such on-line monitoring systems. Therefore......, in this paper, the wireless power supply via coupled magnetic resonance (MR-WPS) is proposed for powering the wireless sensor and the associated wireless sensor solution is also proposed. The key specifications of the MR-WPS working in switchgear cabinet with a harsh operation environment are analyzed...... power is able to be delivered to the wireless sensor through the designed MR-WPS, and therefore the theoretical analysis and design is verified....

  10. Influence of Ambient Humidity on the Voltage Response of Ionic Polymer-Metal Composite Sensor.

    Science.gov (United States)

    Zhu, Zicai; Horiuchi, Tetsuya; Kruusamäe, Karl; Chang, Longfei; Asaka, Kinji

    2016-03-31

    Electrical potential based on ion migration exists not only in natural systems but also in ionic polymer materials. In order to investigate the influence of ambient humidity on voltage response, classical Au-Nafion IPMC was chosen as the reference sample. Voltage response under a bending deformation was measured in two ways: first, continuous measurement of voltage response in the process of absorption and desorption of water to study the tendency of voltage variation at all water states; second, measurements at multiple fixed ambient humidity levels to characterize the process of voltage response quantitatively. Ambient humidity influences the voltage response mainly by varying water content in ionic polymer. Under a step bending, the amplitude of initial voltage peak first increases and then decreases as the ambient humidity and the inherent water content decrease. This tendency is explained semiquantitatively by mass storage capacity related to the stretchable state of the Nafion polymer network. Following the initial peak, the voltage shows a slow decay to a steady state, which is first characterized in this paper. The relative voltage decay during the steady state always decreases as the ambient humidity is lowered. It is ascribed to progressive increase of the ratio between the water molecules in the cation hydration shell to the free water. Under sinusoidal mechanical bending excitation in the range of 0.1-10 Hz, the voltage magnitude increases with frequency at high ambient humidity but decreases with frequency at low ambient humidity. The relationship is mainly controlled by the voltage decay effect and the response speed.

  11. Low-Voltage 96 dB Snapshot CMOS Image Sensor with 4.5 nW Power Dissipation per Pixel

    Directory of Open Access Journals (Sweden)

    Orly Yadid-Pecht

    2012-07-01

    Full Text Available Modern “smart” CMOS sensors have penetrated into various applications, such as surveillance systems, bio-medical applications, digital cameras, cellular phones and many others. Reducing the power of these sensors continuously challenges designers. In this paper, a low power global shutter CMOS image sensor with Wide Dynamic Range (WDR ability is presented. This sensor features several power reduction techniques, including a dual voltage supply, a selective power down, transistors with different threshold voltages, a non-rationed logic, and a low voltage static memory. A combination of all these approaches has enabled the design of the low voltage “smart” image sensor, which is capable of reaching a remarkable dynamic range, while consuming very low power. The proposed power-saving solutions have allowed the maintenance of the standard architecture of the sensor, reducing both the time and the cost of the design. In order to maintain the image quality, a relation between the sensor performance and power has been analyzed and a mathematical model, describing the sensor Signal to Noise Ratio (SNR and Dynamic Range (DR as a function of the power supplies, is proposed. The described sensor was implemented in a 0.18 um CMOS process and successfully tested in the laboratory. An SNR of 48 dB and DR of 96 dB were achieved with a power dissipation of 4.5 nW per pixel.

  12. Low-voltage 96 dB snapshot CMOS image sensor with 4.5 nW power dissipation per pixel.

    Science.gov (United States)

    Spivak, Arthur; Teman, Adam; Belenky, Alexander; Yadid-Pecht, Orly; Fish, Alexander

    2012-01-01

    Modern "smart" CMOS sensors have penetrated into various applications, such as surveillance systems, bio-medical applications, digital cameras, cellular phones and many others. Reducing the power of these sensors continuously challenges designers. In this paper, a low power global shutter CMOS image sensor with Wide Dynamic Range (WDR) ability is presented. This sensor features several power reduction techniques, including a dual voltage supply, a selective power down, transistors with different threshold voltages, a non-rationed logic, and a low voltage static memory. A combination of all these approaches has enabled the design of the low voltage "smart" image sensor, which is capable of reaching a remarkable dynamic range, while consuming very low power. The proposed power-saving solutions have allowed the maintenance of the standard architecture of the sensor, reducing both the time and the cost of the design. In order to maintain the image quality, a relation between the sensor performance and power has been analyzed and a mathematical model, describing the sensor Signal to Noise Ratio (SNR) and Dynamic Range (DR) as a function of the power supplies, is proposed. The described sensor was implemented in a 0.18 um CMOS process and successfully tested in the laboratory. An SNR of 48 dB and DR of 96 dB were achieved with a power dissipation of 4.5 nW per pixel.

  13. Tarantula huwentoxin-IV inhibits neuronal sodium channels by binding to receptor site 4 and trapping the domain ii voltage sensor in the closed configuration.

    Science.gov (United States)

    Xiao, Yucheng; Bingham, Jon-Paul; Zhu, Weiguo; Moczydlowski, Edward; Liang, Songping; Cummins, Theodore R

    2008-10-03

    Peptide toxins with high affinity, divergent pharmacological functions, and isoform-specific selectivity are powerful tools for investigating the structure-function relationships of voltage-gated sodium channels (VGSCs). Although a number of interesting inhibitors have been reported from tarantula venoms, little is known about the mechanism for their interaction with VGSCs. We show that huwentoxin-IV (HWTX-IV), a 35-residue peptide from tarantula Ornithoctonus huwena venom, preferentially inhibits neuronal VGSC subtypes rNav1.2, rNav1.3, and hNav1.7 compared with muscle subtypes rNav1.4 and hNav1.5. Of the five VGSCs examined, hNav1.7 was most sensitive to HWTX-IV (IC(50) approximately 26 nM). Following application of 1 microm HWTX-IV, hNav1.7 currents could only be elicited with extreme depolarizations (>+100 mV). Recovery of hNav1.7 channels from HWTX-IV inhibition could be induced by extreme depolarizations or moderate depolarizations lasting several minutes. Site-directed mutagenesis analysis indicated that the toxin docked at neurotoxin receptor site 4 located at the extracellular S3-S4 linker of domain II. Mutations E818Q and D816N in hNav1.7 decreased toxin affinity for hNav1.7 by approximately 300-fold, whereas the reverse mutations in rNav1.4 (N655D/Q657E) and the corresponding mutations in hNav1.5 (R812D/S814E) greatly increased the sensitivity of the muscle VGSCs to HWTX-IV. Our data identify a novel mechanism for sodium channel inhibition by tarantula toxins involving binding to neurotoxin receptor site 4. In contrast to scorpion beta-toxins that trap the IIS4 voltage sensor in an outward configuration, we propose that HWTX-IV traps the voltage sensor of domain II in the inward, closed configuration.

  14. Mapping the interaction site for the tarantula toxin hainantoxin-IV (β-TRTX-Hn2a) in the voltage sensor module of domain II of voltage-gated sodium channels.

    Science.gov (United States)

    Cai, Tianfu; Luo, Ji; Meng, Er; Ding, Jiuping; Liang, Songping; Wang, Sheng; Liu, Zhonghua

    2015-06-01

    Peptide toxins often have pharmacological applications and are powerful tools for investigating the structure-function relationships of voltage-gated sodium channels (VGSCs). Although a group of potential VGSC inhibitors have been reported from tarantula venoms, little is known about the mechanism of their interaction with VGSCs. In this study, we showed that hainantoxin-IV (β-TRTX-Hn2a, HNTX-IV in brief), a 35-residue peptide from Ornithoctonus hainana venom, preferentially inhibited rNav1.2, rNav1.3 and hNav1.7 compared with rNav1.4 and hNav1.5. hNav1.7 was the most sensitive to HNTX-IV (IC50∼21nM). In contrast to many other tarantula toxins that affect VGSCs, HNTX-IV at subsaturating concentrations did not alter activation and inactivation kinetics in the physiological range of voltages, while very large depolarization above +70mV could partially activate toxin-bound hNav1.7 channel, indicating that HNTX-IV acts as a gating modifier rather than a pore blocker. Site-directed mutagenesis indicated that the toxin bound to site 4, which was located on the extracellular S3-S4 linker of hNav1.7 domain II. Mutants E753Q, D816N and E818Q of hNav1.7 decreased toxin affinity for hNav1.7 by 2.0-, 3.3- and 130-fold, respectively. In silico docking indicated that a three-toed claw substructure formed by residues with close contacts in the interface between HNTX-IV and hNav1.7 domain II stabilized the toxin-channel complex, impeding movement of the domain II voltage sensor and inhibiting hNav1.7 activation. Our data provide structural details for structure-based drug design and a useful template for the design of highly selective inhibitors of a specific subtype of VGSCs. Copyright © 2014 Elsevier Inc. All rights reserved.

  15. Rapid Cellular Phenotyping of Human Pluripotent Stem Cell-Derived Cardiomyocytes using a Genetically Encoded Fluorescent Voltage Sensor

    Directory of Open Access Journals (Sweden)

    Jordan S. Leyton-Mange

    2014-02-01

    Full Text Available In addition to their promise in regenerative medicine, pluripotent stem cells have proved to be faithful models of many human diseases. In particular, patient-specific stem cell-derived cardiomyocytes recapitulate key features of several life-threatening cardiac arrhythmia syndromes. For both modeling and regenerative approaches, phenotyping of stem cell-derived tissues is critical. Cellular phenotyping has largely relied upon expression of lineage markers rather than physiologic attributes. This is especially true for cardiomyocytes, in part because electrophysiological recordings are labor intensive. Likewise, most optical voltage indicators suffer from phototoxicity, which damages cells and degrades signal quality. Here we present the use of a genetically encoded fluorescent voltage indicator, ArcLight, which we demonstrate can faithfully report transmembrane potentials in human stem cell-derived cardiomyocytes. We demonstrate the application of this fluorescent sensor in high-throughput, serial phenotyping of differentiating cardiomyocyte populations and in screening for drug-induced cardiotoxicity.

  16. Control of a Two-Stage Direct Power Converter with a Single Voltage Sensor Mounted in the Intermediary Circuit

    DEFF Research Database (Denmark)

    Klumpner, Christian; Wheeler, P.; Blaabjerg, Frede

    2004-01-01

    Controlling a converter requires not only a powerful processors but also accurate voltage and current sensors and fast and precise analogue-digital converters, which increase the cost per kW of the assembly, especially in the low power range. A matrix converter requires less transducers than a back...... converters but in two stages (AC/DC/AC) without using energy storage in the intermediary circuit. They also offer the possibility to reduce the number of switches compared to the standard single-stage matrix converter. This paper presents a new method to control a two-stage DPC providing sine-wave in sine...

  17. External pH modulates EAG superfamily K+ channels through EAG-specific acidic residues in the voltage sensor

    Science.gov (United States)

    Kazmierczak, Marcin; Zhang, Xiaofei; Chen, Bihan; Mulkey, Daniel K.; Shi, Yingtang; Wagner, Paul G.; Pivaroff-Ward, Kendra; Sassic, Jessica K.; Bayliss, Douglas A.

    2013-01-01

    The Ether-a-go-go (EAG) superfamily of voltage-gated K+ channels consists of three functionally distinct gene families (Eag, Elk, and Erg) encoding a diverse set of low-threshold K+ currents that regulate excitability in neurons and muscle. Previous studies indicate that external acidification inhibits activation of three EAG superfamily K+ channels, Kv10.1 (Eag1), Kv11.1 (Erg1), and Kv12.1 (Elk1). We show here that Kv10.2, Kv12.2, and Kv12.3 are similarly inhibited by external protons, suggesting that high sensitivity to physiological pH changes is a general property of EAG superfamily channels. External acidification depolarizes the conductance–voltage (GV) curves of these channels, reducing low threshold activation. We explored the mechanism of this high pH sensitivity in Kv12.1, Kv10.2, and Kv11.1. We first examined the role of acidic voltage sensor residues that mediate divalent cation block of voltage activation in EAG superfamily channels because protons reduce the sensitivity of Kv12.1 to Zn2+. Low pH similarly reduces Mg2+ sensitivity of Kv10.1, and we found that the pH sensitivity of Kv11.1 was greatly attenuated at 1 mM Ca2+. Individual neutralizations of a pair of EAG-specific acidic residues that have previously been implicated in divalent block of diverse EAG superfamily channels greatly reduced the pH response in Kv12.1, Kv10.2, and Kv11.1. Our results therefore suggest a common mechanism for pH-sensitive voltage activation in EAG superfamily channels. The EAG-specific acidic residues may form the proton-binding site or alternatively are required to hold the voltage sensor in a pH-sensitive conformation. The high pH sensitivity of EAG superfamily channels suggests that they could contribute to pH-sensitive K+ currents observed in vivo. PMID:23712551

  18. External pH modulates EAG superfamily K+ channels through EAG-specific acidic residues in the voltage sensor.

    Science.gov (United States)

    Kazmierczak, Marcin; Zhang, Xiaofei; Chen, Bihan; Mulkey, Daniel K; Shi, Yingtang; Wagner, Paul G; Pivaroff-Ward, Kendra; Sassic, Jessica K; Bayliss, Douglas A; Jegla, Timothy

    2013-06-01

    The Ether-a-go-go (EAG) superfamily of voltage-gated K(+) channels consists of three functionally distinct gene families (Eag, Elk, and Erg) encoding a diverse set of low-threshold K(+) currents that regulate excitability in neurons and muscle. Previous studies indicate that external acidification inhibits activation of three EAG superfamily K(+) channels, Kv10.1 (Eag1), Kv11.1 (Erg1), and Kv12.1 (Elk1). We show here that Kv10.2, Kv12.2, and Kv12.3 are similarly inhibited by external protons, suggesting that high sensitivity to physiological pH changes is a general property of EAG superfamily channels. External acidification depolarizes the conductance-voltage (GV) curves of these channels, reducing low threshold activation. We explored the mechanism of this high pH sensitivity in Kv12.1, Kv10.2, and Kv11.1. We first examined the role of acidic voltage sensor residues that mediate divalent cation block of voltage activation in EAG superfamily channels because protons reduce the sensitivity of Kv12.1 to Zn(2+). Low pH similarly reduces Mg(2+) sensitivity of Kv10.1, and we found that the pH sensitivity of Kv11.1 was greatly attenuated at 1 mM Ca(2+). Individual neutralizations of a pair of EAG-specific acidic residues that have previously been implicated in divalent block of diverse EAG superfamily channels greatly reduced the pH response in Kv12.1, Kv10.2, and Kv11.1. Our results therefore suggest a common mechanism for pH-sensitive voltage activation in EAG superfamily channels. The EAG-specific acidic residues may form the proton-binding site or alternatively are required to hold the voltage sensor in a pH-sensitive conformation. The high pH sensitivity of EAG superfamily channels suggests that they could contribute to pH-sensitive K(+) currents observed in vivo.

  19. A novel method for in-situ monitoring of local voltage, temperature and humidity distributions in fuel cells using flexible multi-functional micro sensors.

    Science.gov (United States)

    Lee, Chi-Yuan; Fan, Wei-Yuan; Chang, Chih-Ping

    2011-01-01

    In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS). These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC) and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it.

  20. A Novel Method for In-Situ Monitoring of Local Voltage, Temperature and Humidity Distributions in Fuel Cells Using Flexible Multi-Functional Micro Sensors

    Directory of Open Access Journals (Sweden)

    Chih-Ping Chang

    2011-01-01

    Full Text Available In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS. These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it.

  1. A Novel Method for In-Situ Monitoring of Local Voltage, Temperature and Humidity Distributions in Fuel Cells Using Flexible Multi-Functional Micro Sensors

    Science.gov (United States)

    Lee, Chi-Yuan; Fan, Wei-Yuan; Chang, Chih-Ping

    2011-01-01

    In this investigation, micro voltage, temperature and humidity sensors were fabricated and integrated for the first time on a stainless steel foil using micro-electro-mechanical systems (MEMS). These flexible multi-functional micro sensors have the advantages of high temperature resistance, flexibility, smallness, high sensitivity and precision of location. They were embedded in a proton exchange membrane fuel cell (PEMFC) and used to simultaneously measure variations in the inner voltage, temperature and humidity. The accuracy and reproducibility of the calibrated results obtained using the proposed micro sensors is excellent. The experimental results indicate that, at high current density and 100%RH or 75%RH, the relative humidity midstream and downstream saturates due to severe flooding. The performance of the PEM fuel cell can be stabilized using home-made flexible multi-functional micro sensors by the in-situ monitoring of local voltage, temperature and humidity distributions within it. PMID:22319361

  2. Gas stream analysis using voltage-current time differential operation of electrochemical sensors

    Science.gov (United States)

    Woo, Leta Yar-Li; Glass, Robert Scott; Fitzpatrick, Joseph Jay; Wang, Gangqiang; Henderson, Brett Tamatea; Lourdhusamy, Anthoniraj; Steppan, James John; Allmendinger, Klaus Karl

    2018-01-02

    A method for analysis of a gas stream. The method includes identifying an affected region of an affected waveform signal corresponding to at least one characteristic of the gas stream. The method also includes calculating a voltage-current time differential between the affected region of the affected waveform signal and a corresponding region of an original waveform signal. The affected region and the corresponding region of the waveform signals have a sensitivity specific to the at least one characteristic of the gas stream. The method also includes generating a value for the at least one characteristic of the gas stream based on the calculated voltage-current time differential.

  3. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

    Science.gov (United States)

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-05-09

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

  4. Ultra-low power sensor for autonomous non-invasive voltage measurement in IoT solutions for energy efficiency

    Science.gov (United States)

    Villani, Clemente; Balsamo, Domenico; Brunelli, Davide; Benini, Luca

    2015-05-01

    Monitoring current and voltage waveforms is fundamental to assess the power consumption of a system and to improve its energy efficiency. In this paper we present a smart meter for power consumption which does not need any electrical contact with the load or its conductors, and which can measure both current and voltage. Power metering becomes easier and safer and it is also self-sustainable because an energy harvesting module based on inductive coupling powers the entire device from the output of the current sensor. A low cost 32-bit wireless CPU architecture is used for data filtering and processing, while a wireless transceiver sends data via the IEEE 802.15.4 standard. We describe in detail the innovative contact-less voltage measurement system, which is based on capacitive coupling and on an algorithm that exploits two pre-processing channels. The system self-calibrates to perform precise measurements regardless the cable type. Experimental results demonstrate accuracy in comparison with commercial high-cost instruments, showing negligible deviations.

  5. Low-voltage analog front-end processor design for ISFET-based sensor and H+ sensing applications

    Science.gov (United States)

    Chung, Wen-Yaw; Yang, Chung-Huang; Peng, Kang-Chu; Yeh, M. H.

    2003-04-01

    This paper presents a modular-based low-voltage analog-front-end processor design in a 0.5mm double-poly double-metal CMOS technology for Ion Sensitive Field Effect Transistor (ISFET)-based sensor and H+ sensing applications. To meet the potentiometric response of the ISFET that is proportional to various H+ concentrations, the constant-voltage and constant current (CVCS) testing configuration has been used. Low-voltage design skills such as bulk-driven input pair, folded-cascode amplifier, bootstrap switch control circuits have been designed and integrated for 1.5V supply and nearly rail-to-rail analog to digital signal processing. Core modules consist of an 8-bit two-step analog-digital converter and bulk-driven pre-amplifiers have been developed in this research. The experimental results show that the proposed circuitry has an acceptable linearity to 0.1 pH-H+ sensing conversions with the buffer solution in the range of pH2 to pH12. The processor has a potential usage in battery-operated and portable healthcare devices and environmental monitoring applications.

  6. Pharmacology of the Nav1.1 domain IV voltage sensor reveals coupling between inactivation gating processes.

    Science.gov (United States)

    Osteen, Jeremiah D; Sampson, Kevin; Iyer, Vivek; Julius, David; Bosmans, Frank

    2017-06-27

    The Na v 1.1 voltage-gated sodium channel is a critical contributor to excitability in the brain, where pathological loss of function leads to such disorders as epilepsy, Alzheimer's disease, and autism. This voltage-gated sodium (Na v ) channel subtype also plays an important role in mechanical pain signaling by primary afferent somatosensory neurons. Therefore, pharmacologic modulation of Na v 1.1 represents a potential strategy for treating excitability disorders of the brain and periphery. Inactivation is a complex aspect of Na v channel gating and consists of fast and slow components, each of which may involve a contribution from one or more voltage-sensing domains. Here, we exploit the Hm1a spider toxin, a Na v 1.1-selective modulator, to better understand the relationship between these temporally distinct modes of inactivation and ask whether they can be distinguished pharmacologically. We show that Hm1a inhibits the gating movement of the domain IV voltage sensor (VSDIV), hindering both fast and slow inactivation and leading to an increase in Na v 1.1 availability during high-frequency stimulation. In contrast, ICA-121431, a small-molecule Na v 1.1 inhibitor, accelerates a subsequent VSDIV gating transition to accelerate entry into the slow inactivated state, resulting in use-dependent block. Further evidence for functional coupling between fast and slow inactivation is provided by a Na v 1.1 mutant in which fast inactivation removal has complex effects on slow inactivation. Taken together, our data substantiate the key role of VSDIV in Na v channel fast and slow inactivation and demonstrate that these gating processes are sequential and coupled through VSDIV. These findings provide insight into a pharmacophore on VSDIV through which modulation of inactivation gating can inhibit or facilitate Na v 1.1 function.

  7. Use of multi-functional flexible micro-sensors for in situ measurement of temperature, voltage and fuel flow in a proton exchange membrane fuel cell.

    Science.gov (United States)

    Lee, Chi-Yuan; Chan, Pin-Cheng; Lee, Chung-Ju

    2010-01-01

    Temperature, voltage and fuel flow distribution all contribute considerably to fuel cell performance. Conventional methods cannot accurately determine parameter changes inside a fuel cell. This investigation developed flexible and multi-functional micro sensors on a 40 μm-thick stainless steel foil substrate by using micro-electro-mechanical systems (MEMS) and embedded them in a proton exchange membrane fuel cell (PEMFC) to measure the temperature, voltage and flow. Users can monitor and control in situ the temperature, voltage and fuel flow distribution in the cell. Thereby, both fuel cell performance and lifetime can be increased.

  8. CAcTμS: High-Voltage CMOS Monolithic Active Pixel Sensor for tracking and time tagging of charged particles

    CERN Document Server

    Guilloux, F.; Degerli, Y.; Elhosni, M.; Guyot, C.; Hemperek, T.; Lachkar, M.; Meyer, JP.; Ouraou, A.; Schwemling, P.; Vandenbroucke, M.

    2018-01-01

    The increase of luminosity foreseen for the Phase-II HL-LHC upgrades calls for new solutions to fight against the expected pile-up effects. One approach is to measure very accurately the time of arrival of the particles with a resolution of a few tens of picoseconds. In addition, a spatial granularity better than a few millimeter will be needed to obtain a fake jet rejection rate acceptable for physics analysis. These goals could be achieved by using the intrinsic benefits of a standard High-Voltage CMOS technology – in conjunction with a high-resistivity detector material – leading to a fast, integrated, rad-hard, fully depleted monolithic active pixel sensor ASIC.

  9. An Improved Targeted cAMP Sensor to Study the Regulation of Adenylyl Cyclase 8 by Ca2+ Entry through Voltage-Gated Channels

    Science.gov (United States)

    Everett, Katy L.; Cooper, Dermot M. F.

    2013-01-01

    Here we describe an improved sensor with reduced pH sensitivity tethered to adenylyl cyclase (AC) 8. The sensor was used to study cAMP dynamics in the AC8 microdomain of MIN6 cells, a pancreatic β-cell line. In these cells, AC8 was activated by Ca2+ entry through L-type voltage-gated channels following depolarisation. This activation could be reconstituted in HEK293 cells co-expressing AC8 and either the α1C or α1D subunit of L-type voltage-gated Ca2+ channels. The development of this improved sensor opens the door to the study of cAMP microdomains in excitable cells that have previously been challenging due to the sensitivity of fluorescent proteins to pH changes. PMID:24086669

  10. An improved targeted cAMP sensor to study the regulation of adenylyl cyclase 8 by Ca2+ entry through voltage-gated channels.

    Directory of Open Access Journals (Sweden)

    Katy L Everett

    Full Text Available Here we describe an improved sensor with reduced pH sensitivity tethered to adenylyl cyclase (AC 8. The sensor was used to study cAMP dynamics in the AC8 microdomain of MIN6 cells, a pancreatic β-cell line. In these cells, AC8 was activated by Ca(2+ entry through L-type voltage-gated channels following depolarisation. This activation could be reconstituted in HEK293 cells co-expressing AC8 and either the α1C or α1D subunit of L-type voltage-gated Ca(2+ channels. The development of this improved sensor opens the door to the study of cAMP microdomains in excitable cells that have previously been challenging due to the sensitivity of fluorescent proteins to pH changes.

  11. Characterisation by Impedance Spectroscopy and Capacitance-Voltage of an EMIS Sensor Functionalized by Catalase for Nitrite Detection

    Directory of Open Access Journals (Sweden)

    A. ZAZOUA

    2014-05-01

    Full Text Available Impedance spectroscopy and capacitance-voltage (C-V methods are a rapidly developing electrochemical technique for the characterization of biomaterial–functionalized electrodes and biocatalytic transformations on the electrodes surface, and specifically for the transduction of biosensing events at electrodes. Such techniques have been used in our work as a tool for the characterization of a new nitrite biosensor for environmental applications based on the immobilization of catalase on insulator-semiconductor (IS systems (p-Si/SiO2/Si3N4. The principle of the developed biosensor includes the following: Catalase catalyzed the breakdown of H2O2 into H2O and O2. Nitrite was selected as an inhibitor of catalase. Under optimal conditions, i.e. buffer capacity corresponding to 3 mM phosphate buffer, the catalase enzyme insulator semiconductor sensors shows a high sensitivity to nitrite detection. In both cases, the responses of these biosensors based on nitrite additions are good with the detection limit around 10-11 M. It is expected that such an original and promising concept of inhibitor-based biosensors based on reactivation by inhibitive effects, will be useful for the development of environmental smart biosensors based on the integration of ENFET with the corresponding instrumentation in the same silicon chip.

  12. A limited 4 Å radial displacement of the S4-S5 linker is sufficient for internal gate closing in Kv channels.

    Science.gov (United States)

    Faure, Élise; Starek, Greg; McGuire, Hugo; Bernèche, Simon; Blunck, Rikard

    2012-11-16

    Voltage-gated ion channels are responsible for the generation of action potentials in our nervous system. Conformational rearrangements in their voltage sensor domains in response to changes of the membrane potential control pore opening and thus ion conduction. Crystal structures of the open channel in combination with a wealth of biophysical data and molecular dynamics simulations led to a consensus on the voltage sensor movement. However, the coupling between voltage sensor movement and pore opening, the electromechanical coupling, occurs at the cytosolic face of the channel, from where no structural information is available yet. In particular, the question how far the cytosolic pore gate has to close to prevent ion conduction remains controversial. In cells, spectroscopic methods are hindered because labeling of internal sites remains difficult, whereas liposomes or detergent solutions containing purified ion channels lack voltage control. Here, to overcome these problems, we controlled the state of the channel by varying the lipid environment. This way, we directly measured the position of the S4-S5 linker in both the open and the closed state of a prokaryotic Kv channel (KvAP) in a lipid environment using Lanthanide-based resonance energy transfer. We were able to reconstruct the movement of the covalent link between the voltage sensor and the pore domain and used this information as restraints for molecular dynamics simulations of the closed state structure. We found that a small decrease of the pore radius of about 3-4 Å is sufficient to prevent ion permeation through the pore.

  13. Applications of passive remote surface acoustic wave sensors in high-voltage systems; Einsatz von passiven funkabfragbaren Oberflaechenwellensensoren in der elektrischen Energietechnik

    Energy Technology Data Exchange (ETDEWEB)

    Teminova, R

    2007-06-29

    Passive remote Surface Acoustic Wave (SAW) sensors have been applied e.g. as temperature, pressure or torque sensors. Their important advantages over standard methods are their passive operating principle, which allows operation without any power supply, as well as the wireless high-frequency signal transmission over distances up to about 10..15 m even through (non metallic) housings. These properties of SAW sensors particularly qualify them for applications in high voltage operational equipment. First experience was gained in a long time field test of surge arrester monitoring based on SAW temperature sensors in a German high-voltage substation. Now, this system has been further developed at Darmstadt University of Technology for other applications, the first of them being an overhead line (OHL) conductor temperature measurement, the second one a temperature monitoring system for of high-voltage disconnectors. After designing and building the sensors, extensive laboratory tests were carried out applying high-voltage, high-current and thermal stress in order to approve the suitability for the intended application. All these tests confirmed the assumption that SAW sensors, due to their passive working principle, are not affected at all by any kind of electrical, magnetic or thermal stress that may occur during service. The complete temperature sensor consists of three parts: a sensor chip, an antenna which receives and transmits the signal from and to the radar unit and a body for installation and for protection against environmental impact. One must find a good compromise between optimizing of thermal, dielectric and high-frequency characteristics and at the same time taking into consideration a simple installation. These requirements on the SAW sensors turned out to be difficult to coordinate. To achieve a high measuring precision is especially difficult. First, a new sensor for OHL application was developed. The OHL conductor temperature sensor had been optimized

  14. The S4-S5 linker acts as a signal integrator for HERG K+ channel activation and deactivation gating.

    Directory of Open Access Journals (Sweden)

    Chai Ann Ng

    Full Text Available Human ether-à-go-go-related gene (hERG K(+ channels have unusual gating kinetics. Characterised by slow activation/deactivation but rapid inactivation/recovery from inactivation, the unique gating kinetics underlie the central role hERG channels play in cardiac repolarisation. The slow activation and deactivation kinetics are regulated in part by the S4-S5 linker, which couples movement of the voltage sensor domain to opening of the activation gate at the distal end of the inner helix of the pore domain. It has also been suggested that cytosolic domains may interact with the S4-S5 linker to regulate activation and deactivation kinetics. Here, we show that the solution structure of a peptide corresponding to the S4-S5 linker of hERG contains an amphipathic helix. The effects of mutations at the majority of residues in the S4-S5 linker of hERG were consistent with the previously identified role in coupling voltage sensor movement to the activation gate. However, mutations to Ser543, Tyr545, Gly546 and Ala548 had more complex phenotypes indicating that these residues are involved in additional interactions. We propose a model in which the S4-S5 linker, in addition to coupling VSD movement to the activation gate, also contributes to interactions that stabilise the closed state and a separate set of interactions that stabilise the open state. The S4-S5 linker therefore acts as a signal integrator and plays a crucial role in the slow deactivation kinetics of the channel.

  15. Deconvolution of Voltage Sensor Time Series and Electro-diffusion Modeling Reveal the Role of Spine Geometry in Controlling Synaptic Strength.

    Science.gov (United States)

    Cartailler, Jerome; Kwon, Taekyung; Yuste, Rafael; Holcman, David

    2018-03-07

    Most synaptic excitatory connections are made on dendritic spines. But how the voltage in spines is modulated by its geometry remains unclear. To investigate the electrical properties of spines, we combine voltage imaging data with electro-diffusion modeling. We first present a temporal deconvolution procedure for the genetically encoded voltage sensor expressed in hippocampal cultured neurons and then use electro-diffusion theory to compute the electric field and the current-voltage conversion. We extract a range for the neck resistances of 〈R〉=100±35MΩ. When a significant current is injected in a spine, the neck resistance can be inversely proportional to its radius, but not to the radius square, as predicted by Ohm's law. We conclude that the postsynaptic voltage cannot only be modulated by changing the number of receptors, but also by the spine geometry. Thus, spine morphology could be a key component in determining synaptic transduction and plasticity. Copyright © 2018 Elsevier Inc. All rights reserved.

  16. A DC-Link Voltage Self-Balance Method for a Diode-Clamped Modular Multilevel Converter With Minimum Number of Voltage Sensors

    DEFF Research Database (Denmark)

    Gao, Congzhe; Jiang, Xinjian; Li, Yongdong

    2013-01-01

    Voltage balance issue of dc-link capacitors is very important for applications of a cascade multilevel converter or a modular multilevel converter. In this paper, a novel diode-clamped modular multilevel converter (DCM2C) topology is proposed and a power feedback control method is developed...... used traditional method; therefore, the system performance improvement and cost reduction are expected. Based on the proposed DCM2C, a novel N +1-level cascade multilevel topology is proposed for a cascade active power filter (CS-APF). The simulation and experimental results from the CS-APF have...

  17. The tarantula toxins ProTx-II and huwentoxin-IV differentially interact with human Nav1.7 voltage sensors to inhibit channel activation and inactivation.

    Science.gov (United States)

    Xiao, Yucheng; Blumenthal, Kenneth; Jackson, James O; Liang, Songping; Cummins, Theodore R

    2010-12-01

    The voltage-gated sodium channel Na(v)1.7 plays a crucial role in pain, and drugs that inhibit hNa(v)1.7 may have tremendous therapeutic potential. ProTx-II and huwentoxin-IV (HWTX-IV), cystine knot peptides from tarantula venoms, preferentially block hNa(v)1.7. Understanding the interactions of these toxins with sodium channels could aid the development of novel pain therapeutics. Whereas both ProTx-II and HWTX-IV have been proposed to preferentially block hNa(v)1.7 activation by trapping the domain II voltage-sensor in the resting configuration, we show that specific residues in the voltage-sensor paddle of domain II play substantially different roles in determining the affinities of these toxins to hNa(v)1.7. The mutation E818C increases ProTx-II's and HWTX-IV's IC(50) for block of hNa(v)1.7 currents by 4- and 400-fold, respectively. In contrast, the mutation F813G decreases ProTx-II affinity by 9-fold but has no effect on HWTX-IV affinity. It is noteworthy that we also show that ProTx-II, but not HWTX-IV, preferentially interacts with hNa(v)1.7 to impede fast inactivation by trapping the domain IV voltage-sensor in the resting configuration. Mutations E1589Q and T1590K in domain IV each decreased ProTx-II's IC(50) for impairment of fast inactivation by ~6-fold. In contrast mutations D1586A and F1592A in domain-IV increased ProTx-II's IC(50) for impairment of fast inactivation by ~4-fold. Our results show that whereas ProTx-II and HWTX-IV binding determinants on domain-II may overlap, domain II plays a much more crucial role for HWTX-IV, and contrary to what has been proposed to be a guiding principle of sodium channel pharmacology, molecules do not have to exclusively target the domain IV voltage-sensor to influence sodium channel inactivation.

  18. Electrical properties of FeGa2S4

    International Nuclear Information System (INIS)

    Niftiev, N.N.; Alidzhanov, M.A.; Tagiev, O.B.; Mamedov, F.M.

    2004-01-01

    Temperature dependence of the electrical conductivity and current-voltage characteristics (CVCs) of FeGa 2 S 4 crystals have been studied. It has been shown that the current in the nonlinear range of CVCs is caused by the field effect. The activation energy of carriers and the trap concentrations have been determined

  19. A novel MR-compatible sensor to assess active medical device safety: stimulation monitoring, rectified radio frequency pulses, and gradient-induced voltage measurements.

    Science.gov (United States)

    Barbier, Thérèse; Aissani, Sarra; Weber, Nicolas; Pasquier, Cédric; Felblinger, Jacques

    2018-03-30

    To evaluate the function of an active implantable medical device (AIMD) during magnetic resonance imaging (MRI) scans. The induced voltages caused by the switching of magnetic field gradients and rectified radio frequency (RF) pulse were measured, along with the AIMD stimulations. An MRI-compatible voltage probe with a bandwidth of 0-40 kHz was designed. Measurements were carried out both on the bench with an overvoltage protection circuit commonly used for AIMD and with a pacemaker during MRI scans on a 1.5 T (64 MHz) MR scanner. The sensor exhibits a measurement range of ± 15 V with an amplitude resolution of 7 mV and a temporal resolution of 10 µs. Rectification was measured on the bench with the overvoltage protection circuit. Linear proportionality was confirmed between the induced voltage and the magnetic field gradient slew rate. The pacemaker pacing was recorded successfully during MRI scans. The characteristics of this low-frequency voltage probe allow its use with extreme RF transmission power and magnetic field gradient positioning for MR safety test of AIMD during MRI scans.

  20. Development and Application of a Wireless Sensor for Space Charge Density Measurement in an Ultra-High-Voltage, Direct-Current Environment.

    Science.gov (United States)

    Xin, Encheng; Ju, Yong; Yuan, Haiwen

    2016-10-20

    A space charge density wireless measurement system based on the idea of distributed measurement is proposed for collecting and monitoring the space charge density in an ultra-high-voltage direct-current (UHVDC) environment. The proposed system architecture is composed of a number of wireless nodes connected with space charge density sensors and a base station. The space charge density sensor based on atmospheric ion counter method is elaborated and developed, and the ARM microprocessor and Zigbee radio frequency module are applied. The wireless network communication quality and the relationship between energy consumption and transmission distance in the complicated electromagnetic environment is tested. Based on the experimental results, the proposed measurement system demonstrates that it can adapt to the complex electromagnetic environment under the UHVDC transmission lines and can accurately measure the space charge density.

  1. Local anesthetics disrupt energetic coupling between the voltage-sensing segments of a sodium channel.

    Science.gov (United States)

    Muroi, Yukiko; Chanda, Baron

    2009-01-01

    Local anesthetics block sodium channels in a state-dependent fashion, binding with higher affinity to open and/or inactivated states. Gating current measurements show that local anesthetics immobilize a fraction of the gating charge, suggesting that the movement of voltage sensors is modified when a local anesthetic binds to the pore of the sodium channel. Here, using voltage clamp fluorescence measurements, we provide a quantitative description of the effect of local anesthetics on the steady-state behavior of the voltage-sensing segments of a sodium channel. Lidocaine and QX-314 shifted the midpoints of the fluorescence-voltage (F-V) curves of S4 domain III in the hyperpolarizing direction by 57 and 65 mV, respectively. A single mutation in the S6 of domain IV (F1579A), a site critical for local anesthetic block, abolished the effect of QX-314 on the voltage sensor of domain III. Both local anesthetics modestly shifted the F-V relationships of S4 domain IV toward hyperpolarized potentials. In contrast, the F-V curve of the S4 domain I was shifted by 11 mV in the depolarizing direction upon QX-314 binding. These antagonistic effects of the local anesthetic indicate that the drug modifies the coupling between the voltage-sensing domains of the sodium channel. Our findings suggest a novel role of local anesthetics in modulating the gating apparatus of the sodium channel.

  2. A Disease Mutation Causing Episodic Ataxia Type I in the S1 Links Directly to the Voltage Sensor and the Selectivity Filter in Kv Channels.

    Science.gov (United States)

    Petitjean, Dimitri; Kalstrup, Tanja; Zhao, Juan; Blunck, Rikard

    2015-09-02

    The mutation F184C in Kv1.1 leads to development of episodic ataxia type I (EA1). Although the mutation has been said to alter activation kinetics and to lower expression, we show here that the underlying molecular mechanisms may be more complex. Although F184 is positioned in the "peripheral" S1 helix, it occupies a central position in the 3D fold. We show in cut-open oocyte voltage-clamp recordings of gating and ionic currents of the Shaker Kv channel expressed in Xenopus oocytes that F184 not only interacts directly with the gating charges of the S4, but also creates a functional link to the selectivity filter of the neighboring subunit. This link leads to impaired fast and slow inactivation. The effect on fast inactivation is of an allosteric nature considering that fast inactivation is caused by a linked cytosolic ball peptide. The extensive effects of F184C provide a new mechanism underlying EA. Episodic ataxia (EA) is an inherited disease that leads to occasional loss of motor control in combination with variable other symptoms such as vertigo or migraine. EA type I (EA1), studied here, is caused by mutations in a voltage-gated potassium channel that contributes to the generation of electrical signals in the brain. The mechanism by which mutations in voltage-gated potassium channels lead to EA is still unknown and there is no consistent pharmacological treatment. By studying in detail one disease-causing mutation in Kv1.1, we describe a novel molecular mechanism distinct from mechanisms described previously. This mechanism contributes to the understanding of potassium channel function in general and might lead to a better understanding of how EA develops. Copyright © 2015 the authors 0270-6474/15/3512198-09$15.00/0.

  3. Analysis of the Effect of Channel Leakage on Design, Characterization and Modelling of a High Voltage Pseudo-Floating Gate Sensor-Front-End

    Directory of Open Access Journals (Sweden)

    Luca Marchetti

    2017-10-01

    Full Text Available In this paper, we analyze the effects of channel leakage on the design, modelling and characterization of a high voltage pseudo-floating gate amplifier (PFGA used as sensor front-end. Leakages are known as a major challenge in new modern CMOS technologies, which are used to bias the PFGA, and consequently affect the behavior of the amplifier. As high voltages are desired for actuation of many types of resonating sensors, especially in ultrasound applications, PFGA implemented in high voltage and low leakage technologies, such as older CMOS fabrication processes or power MOSFET can be the only option. The challenge with these technologies used to implement the PFGA is that the leakages are very low, which affect the biasing of the floating gate. However, the numerous advantages of this type of amplifier, implemented with modern fabrication processes, such as high flexibility, compactness, low power consumption , etc. encouraged the authors to research about this topic. This work provides analysis of the working principle and the design rules for this amplifier, emphasizing the major differences between PFGA implemented in low leakage and high leakage technologies. Static and dynamic analysis, input offset and non-linearity of the PFGA are the main topics of this article. Three different design approaches are presented in this paper, in order to provide a more general design procedure and offset compensation for any low leakage PFGA. The amplifier has been simulated in AMS- 0 . 35 μ m CMOS models for supply voltages of 5 V and 10 V. Two prototypes have been realized to verify the validity of the modelling and the simulation results. Both devices have been realized by using discrete components and mounted on a printed circuit board. In this work, MOSFETs are realized by using commercial IC CD4007UB and 2N7000. Measurement results of the first prototype proved that the implementation of a low leakage PFGA is possible after that the input offset of

  4. Fluorescence-tracking of activation gating in human ERG channels reveals rapid S4 movement and slow pore opening.

    Directory of Open Access Journals (Sweden)

    Zeineb Es-Salah-Lamoureux

    2010-05-01

    Full Text Available hERG channels are physiologically important ion channels which mediate cardiac repolarization as a result of their unusual gating properties. These are very slow activation compared with other mammalian voltage-gated potassium channels, and extremely rapid inactivation. The mechanism of slow activation is not well understood and is investigated here using fluorescence as a direct measure of S4 movement and pore opening.Tetramethylrhodamine-5-maleimide (TMRM fluorescence at E519 has been used to track S4 voltage sensor movement, and channel opening and closing in hERG channels. Endogenous cysteines (C445 and C449 in the S1-S2 linker bound TMRM, which caused a 10 mV hyperpolarization of the V((1/2 of activation to -27.5+/-2.0 mV, and showed voltage-dependent fluorescence signals. Substitution of S1-S2 linker cysteines with valines allowed unobstructed recording of S3-S4 linker E519C and L520C emission signals. Depolarization of E519C channels caused rapid initial fluorescence quenching, fit with a double Boltzmann relationship, F-V(ON, with V((1/2 (,1 = -37.8+/-1.7 mV, and V((1/2 (,2 = 43.5+/-7.9 mV. The first phase, V((1/2 (,1, was approximately 20 mV negative to the conductance-voltage relationship measured from ionic tail currents (G-V((1/2 = -18.3+/-1.2 mV, and relatively unchanged in a non-inactivating E519C:S620T mutant (V((1/2 = -34.4+/-1.5 mV, suggesting the fast initial fluorescence quenching tracked S4 voltage sensor movement. The second phase of rapid quenching was absent in the S620T mutant. The E519C fluorescence upon repolarization (V((1/2 = -20.6+/-1.2, k = 11.4 mV and L520C quenching during depolarization (V((1/2 = -26.8+/-1.0, k = 13.3 mV matched the respective voltage dependencies of hERG ionic tails, and deactivation time constants from -40 to -110 mV, suggesting they detected pore-S4 rearrangements related to ionic current flow during pore opening and closing.THE DATA INDICATE: 1 that rapid environmental changes occur at the

  5. Sensors

    CERN Document Server

    Pigorsch, Enrico

    1997-01-01

    This is the 5th edition of the Metra Martech Directory "EUROPEAN CENTRES OF EXPERTISE - SENSORS." The entries represent a survey of European sensors development. The new edition contains 425 detailed profiles of companies and research institutions in 22 countries. This is reflected in the diversity of sensors development programmes described, from sensors for physical parameters to biosensors and intelligent sensor systems. We do not claim that all European organisations developing sensors are included, but this is a good cross section from an invited list of participants. If you see gaps or omissions, or would like your organisation to be included, please send details. The data base invites the formation of effective joint ventures by identifying and providing access to specific areas in which organisations offer collaboration. This issue is recognised to be of great importance and most entrants include details of collaboration offered and sought. We hope the directory on Sensors will help you to find the ri...

  6. Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, H. [PBI-Dansensor A/S (Denmark); Toft Soerensen, O. [Risoe National Lab., Materials Research Dept. (Denmark)

    1999-10-01

    A new type of ceramic oxygen sensors based on semiconducting oxides was developed in this project. The advantage of these sensors compared to standard ZrO{sub 2} sensors is that they do not require a reference gas and that they can be produced in small sizes. The sensor design and the techniques developed for production of these sensors are judged suitable by the participating industry for a niche production of a new generation of oxygen sensors. Materials research on new oxygen ion conducting conductors both for applications in oxygen sensors and in fuel was also performed in this project and finally a new process was developed for fabrication of ceramic tubes by dip-coating. (EHS)

  7. CMB-S4 Technology Book, First Edition

    Energy Technology Data Exchange (ETDEWEB)

    Abitbol, Maximilian H. [Columbia Univ., New York, NY (United States); et al.

    2017-06-08

    CMB-S4 is a proposed experiment to map the polarization of the Cosmic Microwave Background (CMB) to nearly the cosmic variance limit for the angular scales that are accessible from the ground. The science goals and capabilities of CMB-S4 in illuminating cosmic inflation, measuring the sum of neutrino masses, searching for relativistic relics in the early universe, characterizing dark energy and dark matter, and mapping the matter distribution in the universe have been described in the CMB-S4 Science Book. This Technology Book is a companion volume to the Science Book. The ambitious science goals of the proposed "Stage-IV" CMB-S4 will require a step forward in experimental capability from the current Stage-III experiments. To guide this process, the community summarized the current state of the technology and identify R&D efforts necessary to advance it for possible use in CMB-S4. The book focused on the technical challenges in four broad areas: Telescope Design; Receiver Optics; Focal-Plane Optical Coupling; and Focal-Plane Sensor and Readout.

  8. Structure and hydration of membranes embedded with voltage-sensing domains.

    Science.gov (United States)

    Krepkiy, Dmitriy; Mihailescu, Mihaela; Freites, J Alfredo; Schow, Eric V; Worcester, David L; Gawrisch, Klaus; Tobias, Douglas J; White, Stephen H; Swartz, Kenton J

    2009-11-26

    Despite the growing number of atomic-resolution membrane protein structures, direct structural information about proteins in their native membrane environment is scarce. This problem is particularly relevant in the case of the highly charged S1-S4 voltage-sensing domains responsible for nerve impulses, where interactions with the lipid bilayer are critical for the function of voltage-activated ion channels. Here we use neutron diffraction, solid-state nuclear magnetic resonance (NMR) spectroscopy and molecular dynamics simulations to investigate the structure and hydration of bilayer membranes containing S1-S4 voltage-sensing domains. Our results show that voltage sensors adopt transmembrane orientations and cause a modest reshaping of the surrounding lipid bilayer, and that water molecules intimately interact with the protein within the membrane. These structural findings indicate that voltage sensors have evolved to interact with the lipid membrane while keeping energetic and structural perturbations to a minimum, and that water penetrates the membrane, to hydrate charged residues and shape the transmembrane electric field.

  9. Samsung Galaxy S4 for dummies

    CERN Document Server

    Hughes, Bill

    2013-01-01

    Explore a world of possibilities with your Samsung Galaxy S 4 smartphone Everything's more exciting when you've got the Galaxy in your hand. Let For Dummies be your guide to getting the most out of your Galaxy S 4. You'll cruise through the smartphone basics and set up process before moving on to the fun stuff like staying in touch with e-mail and texting, surfing the web, navigating with maps, shooting and sharing photos and video, watching movies, listening to music, and so much more. Whether you're entering the smartphone world for the first time or just moving up to

  10. Large conductance Ca2+-activated K+ (BK channel: Activation by Ca2+ and voltage

    Directory of Open Access Journals (Sweden)

    RAMÓN LATORRE

    2006-01-01

    Full Text Available Large conductance Ca2+-activated K+ (BK channels belong to the S4 superfamily of K+ channels that include voltage-dependent K+ (Kv channels characterized by having six (S1-S6 transmembrane domains and a positively charged S4 domain. As Kv channels, BK channels contain a S4 domain, but they have an extra (S0 transmembrane domain that leads to an external NH2-terminus. The BK channel is activated by internal Ca2+, and using chimeric channels and mutagenesis, three distinct Ca2+-dependent regulatory mechanisms with different divalent cation selectivity have been identified in its large COOH-terminus. Two of these putative Ca2+-binding domains activate the BK channel when cytoplasmic Ca2+ reaches micromolar concentrations, and a low Ca2+ affinity mechanism may be involved in the physiological regulation by Mg2+. The presence in the BK channel of multiple Ca2+-binding sites explains the huge Ca2+ concentration range (0.1 μM-100 μM in which the divalent cation influences channel gating. BK channels are also voltage-dependent, and all the experimental evidence points toward the S4 domain as the domain in charge of sensing the voltage. Calcium can open BK channels when all the voltage sensors are in their resting configuration, and voltage is able to activate channels in the complete absence of Ca2+. Therefore, Ca2+ and voltage act independently to enhance channel opening, and this behavior can be explained using a two-tiered allosteric gating mechanism.

  11. Functional diversity of voltage-sensing phosphatases in two urodele amphibians.

    Science.gov (United States)

    Mutua, Joshua; Jinno, Yuka; Sakata, Souhei; Okochi, Yoshifumi; Ueno, Shuichi; Tsutsui, Hidekazu; Kawai, Takafumi; Iwao, Yasuhiro; Okamura, Yasushi

    2014-07-16

    Voltage-sensing phosphatases (VSPs) share the molecular architecture of the voltage sensor domain (VSD) with voltage-gated ion channels and the phosphoinositide phosphatase region with the phosphatase and tensin homolog (PTEN), respectively. VSPs enzymatic activities are regulated by the motions of VSD upon depolarization. The physiological role of these proteins has remained elusive, and insights may be gained by investigating biological variations in different animal species. Urodele amphibians are vertebrates with potent activities of regeneration and also show diverse mechanisms of polyspermy prevention. We cloned cDNAs of VSPs from the testes of two urodeles; Hynobius nebulosus and Cynops pyrrhogaster, and compared their expression and voltage-dependent activation. Their molecular architecture is highly conserved in both Hynobius VSP (Hn-VSP) and Cynops VSP (Cp-VSP), including the positively-charged arginine residues in the S4 segment of the VSD and the enzymatic active site for substrate binding, yet the C-terminal C2 domain of Hn-VSP is significantly shorter than that of Cp-VSP and other VSP orthologs. RT-PCR analysis showed that gene expression pattern was distinct between two VSPs. The voltage sensor motions and voltage-dependent phosphatase activities were investigated electrophysiologically by expression in Xenopus oocytes. Both VSPs showed "sensing" currents, indicating that their voltage sensor domains are functional. The phosphatase activity of Cp-VSP was found to be voltage dependent, as shown by its ability to regulate the conductance of coexpressed GIRK2 channels, but Hn-VSP lacked such phosphatase activity due to the truncation of its C2 domain. © 2014 The Authors. Physiological Reports published by Wiley Periodicals, Inc. on behalf of the American Physiological Society and The Physiological Society.

  12. Membrane Potential-dependent Uptake of 18F-triphenylphosphonium - A New Voltage Sensor as an Imaging Agent for Detecting Burn-induced Apoptosis

    Science.gov (United States)

    Zhao, Gaofeng; Yu, Yong-Ming; Shoup, Timothy M.; Elmaleh, David R.; Bonab, Ali A.; Tompkins, Ronald G.; Fischman, Alan J.

    2014-01-01

    Background Mitochondrial dysfunction has been closely related to many pathological processes, such as cellular apoptosis. Alterations in organelle membrane potential are associated with mitochondrial dysfunction. A fluorine -18 labeled phosphonium compound: 18F-triphenylphosphonium (18F-TPP) was prepared to determine its potential use as a mitochondria-targeting radiopharmaceutical to evaluate cellular apoptosis. Methods Studies were conducted in both ex vivo cell lines and in vivo using a burned animal model. Uptake of 18F-TPP was assessed in PC-3 cells by gamma counting under the following conditions: graded levels of extra-cellular potassium concentrations, incubation with carbonyl cyanide m-chlorophenylhydrazone (CCCP) and staurosporine. Apoptosis was studied in a burn animal model using TUNEL staining and simultaneous assessment of 18F-TPP uptake by biodistribution. Results We found that stepwise membrane depolarization by potassium (K) resulted in a linear decrease in 18F-TPP uptake, with a slope of 0.62+/−0.08 and a correlation coefficient of 0.936+/−0.11. Gradually increased concentrations of CCCP lead to decreased uptakes of 18F-TPP. Staurosporine significantly decreased the uptake of 18F-TPP in PC-3 cells from 14.2+/−3.8% to 5.6+/−1.3% (P<0.001). Burn induced significant apoptosis (sham: 4.4 +/−1.8% vs. burn: 24.6+/− 6.7 %; p<0.005) and a reduced uptake of tracer in the spleens of burn injured animals as compared to sham burn controls (burn: 1.13+/−0.24% vs. sham: 3.28+/−0.67%; p<0.005). Biodistribution studies demonstrated that burn induced significant reduction in 18F-TPP uptake in spleen, heart, lung, and liver, which were associated with significantly increased apoptosis. Conclusions 18F-TPP is a promising new voltage sensor for detecting mitochondrial dysfunction and apoptosis in various tissues. PMID:24582214

  13. Sensor

    OpenAIRE

    Gleeson, Helen; Dierking, Ingo; Grieve, Bruce; Woodyatt, Christopher; Brimicombe, Paul

    2015-01-01

    An electrical temperature sensor (10) comprises a liquid crystalline material (12). First and second electrically conductive contacts (14), (16), having a spaced relationship there between, contact the liquid crystalline material (12). An electric property measuring device is electrically connected to the first and second contacts (14), (16) and is arranged to measure an electric property of the liquid crystalline material (12). The liquid crystalline material (12) has a transition temperatur...

  14. High-voltage CMOS detectors

    International Nuclear Information System (INIS)

    Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

    2016-01-01

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

  15. High-voltage CMOS detectors

    Energy Technology Data Exchange (ETDEWEB)

    Ehrler, F., E-mail: felix.ehrler@student.kit.edu; Blanco, R.; Leys, R.; Perić, I.

    2016-07-11

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

  16. Symmetric voltage-controlled variable resistance

    Science.gov (United States)

    Vanelli, J. C.

    1978-01-01

    Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.

  17. Low-noise Magnetic Sensors

    KAUST Repository

    Kosel, Jü rgen; Sun, Jian

    2014-01-01

    Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

  18. Low-noise Magnetic Sensors

    KAUST Repository

    Kosel, Jurgen

    2014-03-27

    Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

  19. Mutations in the voltage-sensing domain affect the alternative ion permeation pathway in the TRPM3 channel.

    Science.gov (United States)

    Held, Katharina; Gruss, Fabian; Aloi, Vincenzo Davide; Janssens, Annelies; Ulens, Chris; Voets, Thomas; Vriens, Joris

    2018-03-31

    Mutagenesis at positively charged amino acids (arginines and lysines) (R1-R4) in the voltage-sensor domain (transmembrane segment (S) 4) of voltage-gated Na + , K + and Ca 2+ channels can lead to an alternative ion permeation pathway distinct from the central pore. Recently, a non-canonical ion permeation pathway was described in TRPM3, a member of the transient receptor potential (TRP) superfamily. The non-canonical pore exists in the native TRPM3 channel and can be activated by co-stimulation of the endogenous agonist pregnenolone sulphate and the antifungal drug clotrimazole or by stimulation of the synthetic agonist CIM0216. Alignment of the voltage sensor of Shaker K + channels with the entire TRPM3 sequence revealed the highest degree of similarity in the putative S4 region of TRPM3, and suggested that only one single gating charge arginine (R2) in the putative S4 region is conserved. Mutagenesis studies in the voltage-sensing domain of TRPM3 revealed several residues in the voltage sensor (S4) as well as in S1 and S3 that are crucial for the occurrence of the non-canonical inward currents. In conclusion, this study provides evidence for the involvement of the voltage-sensing domain of TRPM3 in the formation of an alternative ion permeation pathway. Transient receptor potential (TRP) channels are cationic channels involved in a broad array of functions, including homeostasis, motility and sensory functions. TRP channel subunits consist of six transmembrane segments (S1-S6), and form tetrameric channels with a central pore formed by the region encompassing S5 and S6. Recently, evidence was provided for the existence of an alternative ion permeation pathway in TRPM3, which allows large inward currents upon hyperpolarization independently of the central pore. However, very little knowledge is available concerning the localization of this alternative pathway in the native TRPM3 channel protein. Guided by sequence homology with Shaker K + channels, in which

  20. The Molecular Basis of Polyunsaturated Fatty Acid Interactions with the Shaker Voltage-Gated Potassium Channel.

    Directory of Open Access Journals (Sweden)

    Samira Yazdi

    2016-01-01

    Full Text Available Voltage-gated potassium (KV channels are membrane proteins that respond to changes in membrane potential by enabling K+ ion flux across the membrane. Polyunsaturated fatty acids (PUFAs induce channel opening by modulating the voltage-sensitivity, which can provide effective treatment against refractory epilepsy by means of a ketogenic diet. While PUFAs have been reported to influence the gating mechanism by electrostatic interactions to the voltage-sensor domain (VSD, the exact PUFA-protein interactions are still elusive. In this study, we report on the interactions between the Shaker KV channel in open and closed states and a PUFA-enriched lipid bilayer using microsecond molecular dynamics simulations. We determined a putative PUFA binding site in the open state of the channel located at the protein-lipid interface in the vicinity of the extracellular halves of the S3 and S4 helices of the VSD. In particular, the lipophilic PUFA tail covered a wide range of non-specific hydrophobic interactions in the hydrophobic central core of the protein-lipid interface, while the carboxylic head group displayed more specific interactions to polar/charged residues at the extracellular regions of the S3 and S4 helices, encompassing the S3-S4 linker. Moreover, by studying the interactions between saturated fatty acids (SFA and the Shaker KV channel, our study confirmed an increased conformational flexibility in the polyunsaturated carbon tails compared to saturated carbon chains, which may explain the specificity of PUFA action on channel proteins.

  1. Coupling between the voltage-sensing and phosphatase domains of Ci-VSP.

    Science.gov (United States)

    Villalba-Galea, Carlos A; Miceli, Francesco; Taglialatela, Maurizio; Bezanilla, Francisco

    2009-07-01

    The Ciona intestinalis voltage sensor-containing phosphatase (Ci-VSP) shares high homology with the phosphatidylinositol phosphatase enzyme known as PTEN (phosphatase and tensin homologue deleted on chromosome 10). We have taken advantage of the similarity between these proteins to inquire about the coupling between the voltage sensing and the phosphatase domains in Ci-VSP. Recently, it was shown that four basic residues (R11, K13, R14, and R15) in PTEN are critical for its binding onto the membrane, required for its catalytic activity. Ci-VSP has three of the basic residues of PTEN. Here, we show that when R253 and R254 (which are the homologues of R14 and R15 in PTEN) are mutated to alanines in Ci-VSP, phosphatase activity is disrupted, as revealed by a lack of effect on the ionic currents of KCNQ2/3, where current decrease is a measure of phosphatase activity. The enzymatic activity was not rescued by the introduction of lysines, indicating that the binding is an arginine-specific interaction between the phosphatase binding domain and the membrane, presumably through the phosphate groups of the phospholipids. We also found that the kinetics and steady-state voltage dependence of the S4 segment movement are affected when the arginines are not present, indicating that the interaction of R253 and R254 with the membrane, required for the catalytic action of the phosphatase, restricts the movement of the voltage sensor.

  2. Voltage-Dependent Gating: Novel Insights from KCNQ1 Channels

    Science.gov (United States)

    Cui, Jianmin

    2016-01-01

    Gating of voltage-dependent cation channels involves three general molecular processes: voltage sensor activation, sensor-pore coupling, and pore opening. KCNQ1 is a voltage-gated potassium (Kv) channel whose distinctive properties have provided novel insights on fundamental principles of voltage-dependent gating. 1) Similar to other Kv channels, KCNQ1 voltage sensor activation undergoes two resolvable steps; but, unique to KCNQ1, the pore opens at both the intermediate and activated state of voltage sensor activation. The voltage sensor-pore coupling differs in the intermediate-open and the activated-open states, resulting in changes of open pore properties during voltage sensor activation. 2) The voltage sensor-pore coupling and pore opening require the membrane lipid PIP2 and intracellular ATP, respectively, as cofactors, thus voltage-dependent gating is dependent on multiple stimuli, including the binding of intracellular signaling molecules. These mechanisms underlie the extraordinary KCNE1 subunit modification of the KCNQ1 channel and have significant physiological implications. PMID:26745405

  3. Structural and elemental characterization of high efficiency Cu2ZnSnS4 solar cells

    Science.gov (United States)

    Wang, Kejia; Shin, Byungha; Reuter, Kathleen B.; Todorov, Teodor; Mitzi, David B.; Guha, Supratik

    2011-01-01

    We have carried out detailed microstructural studies of phase separation and grain boundary composition in Cu2ZnSnS4 based solar cells. The absorber layer was fabricated by thermal evaporation followed by post high temperature annealing on hot plate. We show that inter-reactions between the bottom molybdenum and the Cu2ZnSnS4, besides triggering the formation of interfacial MoSx, results in the out-diffusion of Cu from the Cu2ZnSnS4 layer. Phase separation of Cu2ZnSnS4 into ZnS and a Cu-Sn-S compound is observed at the molybdenum-Cu2ZnSnS4 interface, perhaps as a result of the compositional out-diffusion. Additionally, grain boundaries within the thermally evaporated absorber layer are found to be either Cu-rich or at the expected bulk composition. Such interfacial compound formation and grain boundary chemistry likely contributes to the lower than expected open circuit voltages observed for the Cu2ZnSnS4 devices.

  4. Beyond voltage-gated ion channels: Voltage-operated membrane proteins and cellular processes.

    Science.gov (United States)

    Zhang, Jianping; Chen, Xingjuan; Xue, Yucong; Gamper, Nikita; Zhang, Xuan

    2018-04-18

    Voltage-gated ion channels were believed to be the only voltage-sensitive proteins in excitable (and some non-excitable) cells for a long time. Emerging evidence indicates that the voltage-operated model is shared by some other transmembrane proteins expressed in both excitable and non-excitable cells. In this review, we summarize current knowledge about voltage-operated proteins, which are not classic voltage-gated ion channels as well as the voltage-dependent processes in cells for which single voltage-sensitive proteins have yet to be identified. Particularly, we will focus on the following. (1) Voltage-sensitive phosphoinositide phosphatases (VSP) with four transmembrane segments homologous to the voltage sensor domain (VSD) of voltage-gated ion channels; VSPs are the first family of proteins, other than the voltage-gated ion channels, for which there is sufficient evidence for the existence of the VSD domain; (2) Voltage-gated proton channels comprising of a single voltage-sensing domain and lacking an identified pore domain; (3) G protein coupled receptors (GPCRs) that mediate the depolarization-evoked potentiation of Ca 2+ mobilization; (4) Plasma membrane (PM) depolarization-induced but Ca 2+ -independent exocytosis in neurons. (5) Voltage-dependent metabolism of phosphatidylinositol 4,5-bisphosphate (PtdIns[4,5]P 2 , PIP 2 ) in the PM. These recent discoveries expand our understanding of voltage-operated processes within cellular membranes. © 2018 Wiley Periodicals, Inc.

  5. Interactions between charged residues in the transmembrane segments of the voltage-sensing domain in the hERG channel.

    Science.gov (United States)

    Zhang, M; Liu, J; Jiang, M; Wu, D-M; Sonawane, K; Guy, H R; Tseng, G-N

    2005-10-01

    Studies on voltage-gated K channels such as Shaker have shown that positive charges in the voltage-sensor (S4) can form salt bridges with negative charges in the surrounding transmembrane segments in a state-dependent manner, and different charge pairings can stabilize the channels in closed or open states. The goal of this study is to identify such charge interactions in the hERG channel. This knowledge can provide constraints on the spatial relationship among transmembrane segments in the channel's voltage-sensing domain, which are necessary for modeling its structure. We first study the effects of reversing S4's positive charges on channel activation. Reversing positive charges at the outer (K525D) and inner (K538D) ends of S4 markedly accelerates hERG activation, whereas reversing the 4 positive charges in between either has no effect or slows activation. We then use the 'mutant cycle analysis' to test whether D456 (outer end of S2) and D411 (inner end of S1) can pair with K525 and K538, respectively. Other positive charges predicted to be able, or unable, to interact with D456 or D411 are also included in the analysis. The results are consistent with predictions based on the distribution of these charged residues, and confirm that there is functional coupling between D456 and K525 and between D411 and K538.

  6. Voltage regulating circuit

    NARCIS (Netherlands)

    2005-01-01

    A voltage regulating circuit comprising a rectifier (2) for receiving an AC voltage (Vmains) and for generating a rectified AC voltage (vrec), and a capacitor (3) connected in parallel with said rectified AC voltage for providing a DC voltage (VDC) over a load (5), characterized by a unidirectional

  7. Structural mechanism of voltage-dependent gating in an isolated voltage-sensing domain.

    Science.gov (United States)

    Li, Qufei; Wanderling, Sherry; Paduch, Marcin; Medovoy, David; Singharoy, Abhishek; McGreevy, Ryan; Villalba-Galea, Carlos A; Hulse, Raymond E; Roux, Benoît; Schulten, Klaus; Kossiakoff, Anthony; Perozo, Eduardo

    2014-03-01

    The transduction of transmembrane electric fields into protein motion has an essential role in the generation and propagation of cellular signals. Voltage-sensing domains (VSDs) carry out these functions through reorientations of positive charges in the S4 helix. Here, we determined crystal structures of the Ciona intestinalis VSD (Ci-VSD) in putatively active and resting conformations. S4 undergoes an ~5-Å displacement along its main axis, accompanied by an ~60° rotation. This movement is stabilized by an exchange in countercharge partners in helices S1 and S3 that generates an estimated net charge transfer of ~1 eo. Gating charges move relative to a ''hydrophobic gasket' that electrically divides intra- and extracellular compartments. EPR spectroscopy confirms the limited nature of S4 movement in a membrane environment. These results provide an explicit mechanism for voltage sensing and set the basis for electromechanical coupling in voltage-dependent enzymes and ion channels.

  8. Antiviral and antifungal activity of some dermaseptin S4 analogues

    African Journals Online (AJOL)

    ajl yemi

    2011-10-26

    Oct 26, 2011 ... African Journal of Biotechnology Vol. ... dermaseptin S4 (DS-S4) that presents a potent cytotoxic effect. .... causing 100% cytotoxicity (CC) after 24 h of exposure .... Nicolas, 1994), it was shown that the mere deletion of 2.

  9. Antiviral and antifungal activity of some dermaseptin S4 analogues ...

    African Journals Online (AJOL)

    Dermaseptins are peptides found in skin secretions of Phyllomedusinae frogs. These peptides exert lytic action on various microorganisms, and do not have a considerable haemolytic effect apart from dermaseptin S4 (DS-S4) that presents a potent cytotoxic effect. This investigation was an attempt to synthesize several ...

  10. Higher spin gauge theory on fuzzy \\boldsymbol {S^4_N}

    Science.gov (United States)

    Sperling, Marcus; Steinacker, Harold C.

    2018-02-01

    We examine in detail the higher spin fields which arise on the basic fuzzy sphere S^4N in the semi-classical limit. The space of functions can be identified with functions on classical S 4 taking values in a higher spin algebra associated to \

  11. The Voltage-Dependent Anion Channel 1 (AtVDAC1 Negatively Regulates Plant Cold Responses during Germination and Seedling Development in Arabidopsis and Interacts with Calcium Sensor CBL1

    Directory of Open Access Journals (Sweden)

    Zhi-Yong Li

    2013-01-01

    Full Text Available The voltage-dependent anion channel (VDAC, a highly conserved major mitochondrial outer membrane protein, plays crucial roles in energy metabolism and metabolite transport. However, knowledge about the roles of the VDAC family in plants is limited. In this study, we investigated the expression pattern of VDAC1 in Arabidopsis and found that cold stress promoted the accumulation of VDAC1 transcripts in imbibed seeds and mature plants. Overexpression of VDAC1 reduced tolerance to cold stress in Arabidopsis. Phenotype analysis of VDAC1 T-DNA insertion mutant plants indicated that a vdac1 mutant line had faster germination kinetics under cold treatment and showed enhanced tolerance to freezing. The yeast two-hybrid system revealed that VDAC1 interacts with CBL1, a calcium sensor in plants. Like the vdac1, a cbl1 mutant also exhibited a higher seed germination rate. We conclude that both VDAC1 and CBL1 regulate cold stress responses during seed germination and plant development.

  12. Dual Regulation of Voltage-Sensitive Ion Channels by PIP2

    Directory of Open Access Journals (Sweden)

    Aldo A Rodríguez Menchaca

    2012-09-01

    Full Text Available Over the past 16 years, there has been an impressive number of ion channels shown to be sensitive to the major phosphoinositide in the plasma membrane, phosphatidilinositol 4,5-bisphosphate (PIP2. Among them are voltage-gated channels, which are crucial for both neuronal and cardiac excitability. Voltage-gated calcium (Cav channels were shown to be regulated bidirectionally by PIP2. On one hand, PIP2 stabilized their activity by reducing current rundown but on the other hand it produced a voltage-dependent inhibition by shifting the activation curve to more positive voltages. For voltage-gated potassium (Kv channels PIP2 was first shown to prevent N-type inactivation. Careful examination of the effects of PIP2 on the activation mechanism of Kv1.2 has shown a similar bidirectional regulation as in the Cav channels. The two effects could be distinguished kinetically, in terms of their sensitivities to PIP2 and by distinct molecular determinants. The rightward shift of the Kv1.2 voltage dependence implicated basic residues in the S4-S5 linker and was consistent with stabilization of the inactive state of the voltage sensor. A third type of a voltage-gated ion channel modulated by PIP2 is the hyperpolarization-activated cyclic nucleotide-gated (HCN channel. PIP2 has been shown to enhance the opening of HCN channels by shifting their voltage-dependent activation toward depolarized potentials. The sea urchin HCN channel, SpIH, showed again a PIP2-mediated bidirectional effect but in reverse order than the depolarization-activated Cav and Kv channels: a voltage-dependent potentiation, like the mammalian HCN channels, but also an inhibition of the cGMP-induced current activation. Just like the Kv1.2 channels, distinct molecular determinants underlied the PIP2 dual effects on SpIH channels. The dual regulation of these very different ion channels, all of which are voltage dependent, points to conserved mechanisms of regulation of these channels by PIP2.

  13. Thin film electroluminescent cells on the basis of Ce-doped CaGa2S4 and SrGa2S4 prepared by flash evaporation method

    International Nuclear Information System (INIS)

    Gambarov, E.; Bayramov, A.; Kato, A.; Iida, S.

    2006-01-01

    Ce-doped CaGa 2 S 4 and SrGa 2 S 4 thin film electroluminescent (TFEL) devices were prepared for the first time on the basis of films deposited by flash evaporation method. Significant crystallization, stoichiometry improvement of the films and increase of photoluminescence intensity were found after annealing in H 2 S and O 2 gas stream. EL spectra of the cells exhibited the characteristic double-band emission similar to that seen for Ce 3+ activated CaGa 2 S 4 and SrGa 2 S 4 films under photon excitation. Applied voltage and frequency dependences of the electroluminescence were studied. Low voltage operation as low as 20 V was observed for these cells. Luminance of about 4 cd/m 2 at 100 V operating voltage with 2.5 kHz frequency was achieved for the TFEL cell with films annealed in O 2 gas stream. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. High critical magnetic field superconductor La3S4

    International Nuclear Information System (INIS)

    Westerholt, K.; Bach, H.; Wendemuth, R.; Methfessel, S.

    1979-01-01

    A report is presented on electrical conductivity, specific heat and magnetization measurements on La 3 S 4 single crystals. The results show that La 3 S 4 is a strong coupling superconductor with a BCS coherence length of 132 A. This extremely low value makes La 3 S 4 an intrinsic high critical magnetic field superconductor with a Landau-Ginsburg parameter of 20. For the temperature gradient of the upper critical magnetic field at the transition temperature values are found up to 35 kG/K. (author)

  15. Giant magnetoimpedance intrinsic impedance and voltage sensitivity of rapidly solidified Co{sub 66}Fe{sub 2}Cr{sub 4}Si{sub 13}B{sub 15} amorphous wire for highly sensitive sensors applications

    Energy Technology Data Exchange (ETDEWEB)

    Das, Tarun K.; Mandal, Sushil K. [CSIR - National Metallurgical Laboratory, NDE and Magnetic Materials Group, MST Division, Jamshedpur (India); Banerji, Pallab [Indian Institute of Technology, Kharagpur, Materials Science Centre, Kharagpur (India)

    2016-11-15

    We report a systematic study of the influence of wire length, L, dependence of giant magneto-impedance (GMI) sensitivity of Co{sub 66}Fe{sub 2}Cr{sub 4}Si{sub 13}B{sub 15} soft magnetic amorphous wire of diameter ∝ 100 μm developed by in-water quenching technique. The magnetization behaviour (hysteresis loops) of the wire with different length (L = 1, 2, 3, 5, 8 and 10 cm) has been evaluated by fuxmetric induction method. It was observed that the behaviour of the hysteresis loops change drastically with the wire length, being attributed to the existence of a critical length, L{sub C}, found to be around 3 cm. GMI measurements have been taken using automated GMI measurement system and the GMI sensitivities in terms of intrinsic impedance sensitivity (S{sub Ω/Am}{sup -1}) and voltage sensitivity (S{sub V/Am}{sup -1}) of the wire have been evaluated under optimal bias field and excitation current. It was found that the maximum (S{sub Ω/Am}{sup -1}){sub max} ∼ 0.63 Ω/kAm{sup -1}/cm and (S{sub V/Am}{sup -1}){sub max} ∼ 3.10 V/kAm{sup -1}/cm were achieved at a critical length L{sub C} ∝ 3 cm of the wire for an AC current of 5 mA and a frequency of 5 MHz. These findings provide crucial insights for optimization of the geometrical dimensions of magnetic sensing elements and important practical guidance for designing high sensitive GMI sensors. The relevant combinations of magnetic material parameters and operating conditions that optimize the sensitivity are highlighted. (orig.)

  16. Domain-to-domain coupling in voltage-sensing phosphatase.

    Science.gov (United States)

    Sakata, Souhei; Matsuda, Makoto; Kawanabe, Akira; Okamura, Yasushi

    2017-01-01

    Voltage-sensing phosphatase (VSP) consists of a transmembrane voltage sensor and a cytoplasmic enzyme region. The enzyme region contains the phosphatase and C2 domains, is structurally similar to the tumor suppressor phosphatase PTEN, and catalyzes the dephosphorylation of phosphoinositides. The transmembrane voltage sensor is connected to the phosphatase through a short linker region, and phosphatase activity is induced upon membrane depolarization. Although the detailed molecular characteristics of the voltage sensor domain and the enzyme region have been revealed, little is known how these two regions are coupled. In addition, it is important to know whether mechanism for coupling between the voltage sensor domain and downstream effector function is shared among other voltage sensor domain-containing proteins. Recent studies in which specific amino acid sites were genetically labeled using a fluorescent unnatural amino acid have enabled detection of the local structural changes in the cytoplasmic region of Ciona intestinalis VSP that occur with a change in membrane potential. The results of those studies provide novel insight into how the enzyme activity of the cytoplasmic region of VSP is regulated by the voltage sensor domain.

  17. Red electroluminescent process excited by hot holes in SrGa2S4:Ce, Mn thin film

    International Nuclear Information System (INIS)

    Tanaka, Katsu; Okamoto, Shinji

    2009-01-01

    This paper reports the first observation of red electroluminescence (EL) in SrGa 2 S 4 :Ce, Mn thin film. The EL spectrum consists of single broad emission band having a peak wavelength of 665 nm. The dominant EL decay time was 31 μs. The relationship between the applied voltage and the EL waveform was measured in single insulating thin film electroluminescent (TFEL) devices. An asymmetric EL waveform was observed in SrGa 2 S 4 :Ce, Mn TFEL devices under a rectangular applied voltage. The polarity of the EL waveform in these devices was different from the waveform in manganese-activated zinc sulfide ZnS:Mn devices. This indicates that hot holes excite the Mn 2+ ions to cause the red EL.

  18. Functional interactions at the interface between voltage-sensing and pore domains in the Shaker K(v) channel.

    Science.gov (United States)

    Soler-Llavina, Gilberto J; Chang, Tsg-Hui; Swartz, Kenton J

    2006-11-22

    Voltage-activated potassium (K(v)) channels contain a central pore domain that is partially surrounded by four voltage-sensing domains. Recent X-ray structures suggest that the two domains lack extensive protein-protein contacts within presumed transmembrane regions, but whether this is the case for functional channels embedded in lipid membranes remains to be tested. We investigated domain interactions in the Shaker K(v) channel by systematically mutating the pore domain and assessing tolerance by examining channel maturation, S4 gating charge movement, and channel opening. When mapped onto the X-ray structure of the K(v)1.2 channel the large number of permissive mutations support the notion of relatively independent domains, consistent with crystallographic studies. Inspection of the maps also identifies portions of the interface where residues are sensitive to mutation, an external cluster where mutations hinder voltage sensor activation, and an internal cluster where domain interactions between S4 and S5 helices from adjacent subunits appear crucial for the concerted opening transition.

  19. Voltage-dependent motion of the catalytic region of voltage-sensing phosphatase monitored by a fluorescent amino acid.

    Science.gov (United States)

    Sakata, Souhei; Jinno, Yuka; Kawanabe, Akira; Okamura, Yasushi

    2016-07-05

    The cytoplasmic region of voltage-sensing phosphatase (VSP) derives the voltage dependence of its catalytic activity from coupling to a voltage sensor homologous to that of voltage-gated ion channels. To assess the conformational changes in the cytoplasmic region upon activation of the voltage sensor, we genetically incorporated a fluorescent unnatural amino acid, 3-(6-acetylnaphthalen-2-ylamino)-2-aminopropanoic acid (Anap), into the catalytic region of Ciona intestinalis VSP (Ci-VSP). Measurements of Anap fluorescence under voltage clamp in Xenopus oocytes revealed that the catalytic region assumes distinct conformations dependent on the degree of voltage-sensor activation. FRET analysis showed that the catalytic region remains situated beneath the plasma membrane, irrespective of the voltage level. Moreover, Anap fluorescence from a membrane-facing loop in the C2 domain showed a pattern reflecting substrate turnover. These results indicate that the voltage sensor regulates Ci-VSP catalytic activity by causing conformational changes in the entire catalytic region, without changing their distance from the plasma membrane.

  20. Voltage-dependent motion of the catalytic region of voltage-sensing phosphatase monitored by a fluorescent amino acid

    Science.gov (United States)

    Sakata, Souhei; Jinno, Yuka; Kawanabe, Akira; Okamura, Yasushi

    2016-01-01

    The cytoplasmic region of voltage-sensing phosphatase (VSP) derives the voltage dependence of its catalytic activity from coupling to a voltage sensor homologous to that of voltage-gated ion channels. To assess the conformational changes in the cytoplasmic region upon activation of the voltage sensor, we genetically incorporated a fluorescent unnatural amino acid, 3-(6-acetylnaphthalen-2-ylamino)-2-aminopropanoic acid (Anap), into the catalytic region of Ciona intestinalis VSP (Ci-VSP). Measurements of Anap fluorescence under voltage clamp in Xenopus oocytes revealed that the catalytic region assumes distinct conformations dependent on the degree of voltage-sensor activation. FRET analysis showed that the catalytic region remains situated beneath the plasma membrane, irrespective of the voltage level. Moreover, Anap fluorescence from a membrane-facing loop in the C2 domain showed a pattern reflecting substrate turnover. These results indicate that the voltage sensor regulates Ci-VSP catalytic activity by causing conformational changes in the entire catalytic region, without changing their distance from the plasma membrane. PMID:27330112

  1. Syntheses, structural variants and characterization of AInM′S4 (A=alkali metals, Tl; M′ = Ge, Sn) compounds; facile ion-exchange reactions of layered NaInSnS4 and KInSnS4 compounds

    International Nuclear Information System (INIS)

    Yohannan, Jinu P.; Vidyasagar, Kanamaluru

    2016-01-01

    Ten AInM′S 4 (A=alkali metals, Tl; M′= Ge, Sn) compounds with diverse structure types have been synthesized and characterized by single crystal and powder X-ray diffraction and a variety of spectroscopic methods. They are wide band gap semiconductors. KInGeS 4 (1-β), RbInGeS 4 (2), CsInGeS 4 (3-β), TlInGeS 4 (4-β), RbInSnS 4 (8-β) and CsInSnS 4 (9) compounds with three-dimensional BaGa 2 S 4 structure and CsInGeS 4 (3-α) and TlInGeS 4 (4-α) compounds with a layered TlInSiS 4 structure have tetrahedral [InM′S 4 ] − frameworks. On the other hand, LiInSnS 4 (5) with spinel structure and NaInSnS 4 (6), KInSnS 4 (7), RbInSnS 4 (8-α) and TlInSnS 4 (10) compounds with layered structure have octahedral [InM′S 4 ] − frameworks. NaInSnS 4 (6) and KInSnS 4 (7) compounds undergo facile topotactic ion-exchange, at room temperature, with various mono-, di- and tri-valent cations in aqueous medium to give rise to metastable layered phases. - Graphical abstract: NaInSnS 4 and KInSnS 4 compounds undergo, in aqueous medium at room temperature, facile topotactic ion-exchange with mono, di and trivalent cations. Display Omitted - Highlights: • Ten AInM′S 4 compounds with diverse structure types were synthesized. • They are wide band gap semiconductors. • NaInSnS 4 and KInSnS 4 compounds undergo facile topotactic ion-exchange at room temperature.

  2. Molecular mechanism of voltage sensing in voltage-gated proton channels

    Science.gov (United States)

    Rebolledo, Santiago; Perez, Marta E.

    2013-01-01

    Voltage-gated proton (Hv) channels play an essential role in phagocytic cells by generating a hyperpolarizing proton current that electrically compensates for the depolarizing current generated by the NADPH oxidase during the respiratory burst, thereby ensuring a sustained production of reactive oxygen species by the NADPH oxidase in phagocytes to neutralize engulfed bacteria. Despite the importance of the voltage-dependent Hv current, it is at present unclear which residues in Hv channels are responsible for the voltage activation. Here we show that individual neutralizations of three charged residues in the fourth transmembrane domain, S4, all reduce the voltage dependence of activation. In addition, we show that the middle S4 charged residue moves from a position accessible from the cytosolic solution to a position accessible from the extracellular solution, suggesting that this residue moves across most of the membrane electric field during voltage activation of Hv channels. Our results show for the first time that the charge movement of these three S4 charges accounts for almost all of the measured gating charge in Hv channels. PMID:23401575

  3. High voltage systems

    International Nuclear Information System (INIS)

    Martin, M.

    1991-01-01

    Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

  4. Thermodynamic properties of CdCr2S4

    International Nuclear Information System (INIS)

    Kesler, Ya.A.; Shchelkotunov, V.A.; Tret'yakov, Yu.D.; Kamyshova, V.K.; Gordeev, I.V.; Alferov, V.A.

    1977-01-01

    The true thermal capacity of ferromagnetic chromium spinel CdCr 2 S 4 has been measured in the temperature range of 172-673 K. Coefficient of linear expansion has been measured in the temperature range of 173-677 K. A change in heat content of the compound has been found by the mixing method (298-750 K). The lattice contribution into thermal capacity, the contribution of thermal expansion, the values of isothermal compressibility factor, and the Crueneisen constants have been calculated from true and mean heat capacity of CdCr 2 S 4 in a wide temperature range. The lattice energy V has been calculated for CdCr 2 S 4 ; it amounts -4226 kcal/mol

  5. New supersymmetric AdS4 type II vacua

    International Nuclear Information System (INIS)

    Tsimpis, D.

    2010-01-01

    We review the supersymmetric AdS 4 x w M 6 backgrounds of type IIA/IIB supergravity constructed in[1]. In type IIA the supersymmetry is N=2, and the six-dimensional internal space is locally an S 2 bundle over a four-dimensional Kaehler-Einstein base; in IIB the internal space is the direct product of a circle and a five-dimensional squashed Sasaki-Einstein manifold. These backgrounds do not contain any sources, all fluxes (including the Romans mass in IIA) are generally non-zero, and the dilaton and warp factor are non-constant. The IIA solutions include the massive deformations of the IIA reduction of the eleven-dimensional AdS 4 x Y p,q solutions, and had been predicted to exist on the basis of the AdS 4 /CFT 3 correspondence. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  6. Methods and apparatuses for low-noise magnetic sensors

    KAUST Repository

    Kosel, Jü rgen; Sun, Jian

    2015-01-01

    Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a first voltage lead coupled to the semiconductor layer. In some embodiments, the first voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the conductive layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

  7. Methods and apparatuses for low-noise magnetic sensors

    KAUST Repository

    Kosel, Jurgen

    2015-10-20

    Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a first voltage lead coupled to the semiconductor layer. In some embodiments, the first voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the conductive layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.

  8. Is NiCo2S4 really a semiconductor?

    KAUST Repository

    Xia, Chuan

    2015-08-31

    NiCo2S4 is a technologically important electrode material that has recently achieved remarkable performance in pseu-docapacitor, catalysis, and dye-synthesized solar cell applications.[1-5] Essentially, all reports on this material have pre-sumed it to be semiconducting, like many of the chalcogenides, with a reported band-gap in the range of 1.2-1.7 eV.[6,7] In this report, we have conducted detailed experimental and theoretical studies, most of which done for the first time, which overwhelmingly show that NiCo2S4 is in fact a metal. We have also calculated the Raman spectrum of this mate-rial and experimentally verified it for the first time, hence clarifying inconsistent Raman spectra reports. Some of the key results that support our conclusions include: (1) the measured carrier density in NiCo2S4 is 3.18×1022 cm-3, (2) Ni-Co2S4 has a room temperature resistivity of around 103 µΩ cm which increases with temperature, (3) NiCo2S4 exhibits a quadratic dependence of the magnetoresistance on magnetic field, (4) thermopower measurements show an extremely low Seebeck coefficient of 5 µV K-1, (5) first principles calculations confirm that NiCo2S4 is a metal. These results sug-gest that it is time to re-think the presumed semiconducting nature of this promising material. They also suggest that the metallic conductivity is another reason (besides the known significant redox activity) behind the excellent perfor-mance reported for this material.

  9. NMR structural and dynamical investigation of the isolated voltage-sensing domain of the potassium channel KvAP: implications for voltage gating.

    Science.gov (United States)

    Shenkarev, Zakhar O; Paramonov, Alexander S; Lyukmanova, Ekaterina N; Shingarova, Lyudmila N; Yakimov, Sergei A; Dubinnyi, Maxim A; Chupin, Vladimir V; Kirpichnikov, Mikhail P; Blommers, Marcel J J; Arseniev, Alexander S

    2010-04-28

    The structure and dynamics of the isolated voltage-sensing domain (VSD) of the archaeal potassium channel KvAP was studied by high-resolution NMR. The almost complete backbone resonance assignment and partial side-chain assignment of the (2)H,(13)C,(15)N-labeled VSD were obtained for the protein domain solubilized in DPC/LDAO (2:1) mixed micelles. Secondary and tertiary structures of the VSD were characterized using secondary chemical shifts and NOE contacts. These data indicate that the spatial structure of the VSD solubilized in micelles corresponds to the structure of the domain in an open state of the channel. NOE contacts and secondary chemical shifts of amide protons indicate the presence of tightly bound water molecule as well as hydrogen bond formation involving an interhelical salt bridge (Asp62-R133) that stabilizes the overall structure of the domain. The backbone dynamics of the VSD was studied using (15)N relaxation measurements. The loop regions S1-S2 and S2-S3 were found mobile, while the S3-S4 loop (voltage-sensor paddle) was found stable at the ps-ns time scale. The moieties of S1, S2, S3, and S4 helices sharing interhelical contacts (at the level of the Asp62-R133 salt bridge) were observed in conformational exchange on the micros-ms time scale. Similar exchange-induced broadening of characteristic resonances was observed for the VSD solubilized in the membrane of lipid-protein nanodiscs composed of DMPC, DMPG, and POPC/DOPG lipids. Apparently, the observed interhelical motions represent an inherent property of the VSD of the KvAP channel and can play an important role in the voltage gating.

  10. Voltage regulator for generator

    Energy Technology Data Exchange (ETDEWEB)

    Naoi, K

    1989-01-17

    It is an object of this invention to provide a voltage regulator for a generator charging a battery, wherein even if the ambient temperature at the voltage regulator rises abnormally high, possible thermal breakage of the semiconductor elements constituting the voltage regulator can be avoided. A feature of this invention is that the semiconductor elements can be protected from thermal breakage, even at an abnormal ambient temperature rise at the voltage regulator for the battery charging generator, by controlling a maximum conduction ratio of a power transistor in the voltage regulator in accordance with the temperature at the voltage regulator. This is achieved through a switching device connected in series to the field coil of the generator and adapted to be controlled in accordance with an output voltage of the generator and the ambient temperature at the voltage regulator. 6 figs.

  11. Voltage linear transformation circuit design

    Science.gov (United States)

    Sanchez, Lucas R. W.; Jin, Moon-Seob; Scott, R. Phillip; Luder, Ryan J.; Hart, Michael

    2017-09-01

    Many engineering projects require automated control of analog voltages over a specified range. We have developed a computer interface comprising custom hardware and MATLAB code to provide real-time control of a Thorlabs adaptive optics (AO) kit. The hardware interface includes an op amp cascade to linearly shift and scale a voltage range. With easy modifications, any linear transformation can be accommodated. In AO applications, the design is suitable to drive a range of different types of deformable and fast steering mirrors (FSM's). Our original motivation and application was to control an Optics in Motion (OIM) FSM which requires the customer to devise a unique interface to supply voltages to the mirror controller to set the mirror's angular deflection. The FSM is in an optical servo loop with a wave front sensor (WFS), which controls the dynamic behavior of the mirror's deflection. The code acquires wavefront data from the WFS and fits a plane, which is subsequently converted into its corresponding angular deflection. The FSM provides +/-3° optical angular deflection for a +/-10 V voltage swing. Voltages are applied to the mirror via a National Instruments digital-to-analog converter (DAC) followed by an op amp cascade circuit. This system has been integrated into our Thorlabs AO testbed which currently runs at 11 Hz, but with planned software upgrades, the system update rate is expected to improve to 500 Hz. To show that the FSM subsystem is ready for this speed, we conducted two different PID tuning runs at different step commands. Once 500 Hz is achieved, we plan to make the code and method for our interface solution freely available to the community.

  12. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  13. Is NiCo2S4 really a semiconductor?

    KAUST Repository

    Xia, Chuan; Li, Peng; Gandi, Appala; Schwingenschlö gl, Udo; Alshareef, Husam N.

    2015-01-01

    NiCo2S4 is a technologically important electrode material that has recently achieved remarkable performance in pseu-docapacitor, catalysis, and dye-synthesized solar cell applications.[1-5] Essentially, all reports on this material have pre

  14. Family physics with S4 and Pati-Salam

    NARCIS (Netherlands)

    de Adelhart Toorop, R.

    2010-01-01

    Family symmetries and grand unified symmetries can bring more structure in the mass sector of the standard model and explain the patterns in the quarks’ and leptons’ masses and mixing. We discuss in particular a model with a Pati-Salam × S4 symmetry. This model can explain the observed neutrino

  15. Fiber-optic voltage measuring system

    Science.gov (United States)

    Ye, Miaoyuan; Nie, De-Xin; Li, Yan; Peng, Yu; Lin, Qi-Qing; Wang, Jing-Gang

    1993-09-01

    A new fibre optic voltage measuring system has been developed based on the electrooptic effect of bismuth germanium oxide (Bi4Ge3O12)crystal. It uses the LED as the light source. The light beam emitted from the light source is transmitted to the sensor through the optic fibre and the intensity of the output beam is changed by the applied voltage. This optic signal is transmitted to the PIN detector and converted to an electric signal which is processed by the electronic circuit and 8098 single chip microcomputer the output voltage signal obtained is directly proportional to the applied voltage. This paper describes the principle the configuration and the performance parameters of the system. Test results are evaluated and discussed.

  16. New Massive Gravity and AdS4 Counterterms

    International Nuclear Information System (INIS)

    Jatkar, Dileep P.; Sinha, Aninda

    2011-01-01

    We show that the recently proposed Dirac-Born-Infeld extension of new massive gravity emerges naturally as a counterterm in four-dimensional anti-de Sitter space (AdS 4 ). The resulting on-shell Euclidean action is independent of the cutoff at zero temperature. We also find that the same choice of counterterm gives the usual area law for the AdS 4 Schwarzschild black hole entropy in a cutoff-independent manner. The parameter values of the resulting counterterm action correspond to a c=0 theory in the context of the duality between AdS 3 gravity and two-dimensional conformal field theory. We rewrite this theory in terms of the gauge field that is used to recast 3D gravity as a Chern-Simons theory.

  17. Joint German/French S4-Analytical Report

    International Nuclear Information System (INIS)

    Miemczyk, H.

    1979-03-01

    A joint German/French program was initiated to investigate in detail the behaviour of artificially defected fuel pins in a sodium loop of the SILOE reactor at Grenoble/France. Three irradiation experiments have been conducted in SILOE on representative SNR-type fuel pins (mixed oxide, low density, stainless steel cladding, external diameter 6 mm). The first experiment, S2, had been an unirradiated pin with a large interstitial defect (machined slit of 30x1 mm). The two following pins, S4 and S3, have been pre-irradiated in RAPSODIE (365 efpd, 10.6 % burnup). The main results of the S4-experiment are described and evaluated in the present report. They concern the following important aspects: sodium-uranate/plutonate formation and its kinetics, fuel loss, fission product release and fuel behaviour

  18. CMB-S4 Science Book, First Edition

    Energy Technology Data Exchange (ETDEWEB)

    Abazajian, Kevork N. [Univ. of California, Irvine, CA (United States); et al.

    2016-10-09

    This book lays out the scientific goals to be addressed by the next-generation ground-based cosmic microwave background experiment, CMB-S4, envisioned to consist of dedicated telescopes at the South Pole, the high Chilean Atacama plateau and possibly a northern hemisphere site, all equipped with new superconducting cameras. CMB-S4 will dramatically advance cosmological studies by crossing critical thresholds in the search for the B-mode polarization signature of primordial gravitational waves, in the determination of the number and masses of the neutrinos, in the search for evidence of new light relics, in constraining the nature of dark energy, and in testing general relativity on large scales.

  19. SUSY S4×SU(5) revisited

    International Nuclear Information System (INIS)

    Hagedorn, Claudia; King, Stephen F.; Luhn, Christoph

    2012-01-01

    Following the recent results from Daya Bay and RENO, which measure the lepton mixing angle θ 13 l ≈0.15, we revisit a supersymmetric (SUSY) S 4 ×SU(5) model, which predicts tri-bimaximal (TB) mixing in the neutrino sector with θ 13 l being too small in its original version. We show that introducing one additional S 4 singlet flavon into the model gives rise to a sizable θ 13 l via an operator which leads to the breaking of one of the two Z 2 symmetries preserved in the neutrino sector at leading order (LO). The results of the original model for fermion masses, quark mixing and the solar mixing angle are maintained to good precision. The atmospheric and solar mixing angle deviations from TB mixing are subject to simple sum rule bounds.

  20. Voltage-sensing phosphatase: its molecular relationship with PTEN.

    Science.gov (United States)

    Okamura, Yasushi; Dixon, Jack E

    2011-02-01

    Voltage-sensing phosphoinositide phosphatase (VSP) contains voltage sensor and cytoplasmic phosphatase domains. A unique feature of this protein is that depolarization-induced motions of the voltage sensor activate PtdIns(3,4,5)P(3) and PtdIns(4,5)P(2) phosphatase activities. VSP exhibits remarkable structural similarities with PTEN, the phosphatase and tensin homolog deleted on chromosome 10. These similarities include the cytoplasmic phosphatase region, the phosphoinositide binding region, and the putative membrane interacting C2 domain.

  1. Submersion-Subcritical Safe Space (S4) reactor

    International Nuclear Information System (INIS)

    King, Jeffrey C.; El-Genk, Mohamed S.

    2006-01-01

    The Submersion-Subcritical Safe Space (S 4 ) reactor, developed for future space power applications and avoidance of single point failures, is presented. The S 4 reactor has a Mo-14% Re solid core, loaded with uranium nitride fuel, cooled by He-30% Xe and sized to provide 550 kWth for 7 years of equivalent full power operation. The beryllium oxide reflector of the S 4 reactor is designed to completely disassemble upon impact on water or soil. The potential of using Spectral Shift Absorber (SSA) materials in different forms to ensure that the reactor remains subcritical in the worst-case submersion accident is investigated. Nine potential SSAs are considered in terms of their effect on the thickness of the radial reflector and on the combined mass of the reactor and the radiation shadow shield. The SSA materials are incorporated as a thin (0.1 mm) coating on the outside surface of the reactor core and as core additions in three possible forms: 2.0 mm diameter pins in the interstices of the core block, 0.25 mm thick sleeves around the fuel stacks and/or additions to the uranium nitride fuel. Results show that with a boron carbide coating and 0.25 mm iridium sleeves around the fuel stacks the S 4 reactor has a reflector outer diameter of 43.5 cm with a combined reactor and shadow shield mass of 935.1 kg. The S 4 reactor with 12.5 at.% gadolinium-155 added to the fuel, 2.0 mm diameter gadolinium-155 sesquioxide interstitial pins, and a 0.1 mm thick gadolinium-155 sesquioxide coating has a slightly smaller reflector outer diameter of 43.0 cm, resulting in a smaller total reactor and shield mass of 901.7 kg. With 8.0 at.% europium-151 added to the fuel, along with europium-151 sesquioxide for the pins and coating, the reflector's outer diameter and the total reactor and shield mass are further reduced to 41.5 cm and 869.2 kg, respectively

  2. Modular chemiresistive sensor

    Energy Technology Data Exchange (ETDEWEB)

    Alam, Maksudul M.; Sampathkumaran, Uma

    2018-02-20

    The present invention relates to a modular chemiresistive sensor. In particular, a modular chemiresistive sensor for hypergolic fuel and oxidizer leak detection, carbon dioxide monitoring and detection of disease biomarkers. The sensor preferably has two gold or platinum electrodes mounted on a silicon substrate where the electrodes are connected to a power source and are separated by a gap of 0.5 to 4.0 .mu.M. A polymer nanowire or carbon nanotube spans the gap between the electrodes and connects the electrodes electrically. The electrodes are further connected to a circuit board having a processor and data storage, where the processor can measure current and voltage values between the electrodes and compare the current and voltage values with current and voltage values stored in the data storage and assigned to particular concentrations of a pre-determined substance such as those listed above or a variety of other substances.

  3. Technological Aspects: High Voltage

    International Nuclear Information System (INIS)

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered. (author)

  4. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D.C.

    2013-12-16

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  5. Tingkat Intensitas Cahaya Di Dalam Ruangan Dengan Menggunakan Sensor Ldr Berbasis Arduino Uno R-3

    OpenAIRE

    Siahaan, Haslena A.

    2017-01-01

    Has designed a measure of light intensity levels using LDR sensor. The working principle of a series of light sensors on sebenarya very simple. Voltage division between VR1 and LDR is at the core of the light above the sensor circuit. The increase in the voltage at VR1 will reduce the voltage falls on LDR, vice versa rise in LDR voltage will reduce the voltage drop on the VR1. Voltage division in accordance with the formula that applies a voltage divider in a series circuit, the voltage suppl...

  6. Voltage Sensing in Membranes: From Macroscopic Currents to Molecular Motions.

    Science.gov (United States)

    Freites, J Alfredo; Tobias, Douglas J

    2015-06-01

    Voltage-sensing domains (VSDs) are integral membrane protein units that sense changes in membrane electric potential, and through the resulting conformational changes, regulate a specific function. VSDs confer voltage-sensitivity to a large superfamily of membrane proteins that includes voltage-gated Na[Formula: see text], K[Formula: see text], Ca[Formula: see text] ,and H[Formula: see text] selective channels, hyperpolarization-activated cyclic nucleotide-gated channels, and voltage-sensing phosphatases. VSDs consist of four transmembrane segments (termed S1 through S4). Their most salient structural feature is the highly conserved positions for charged residues in their sequences. S4 exhibits at least three conserved triplet repeats composed of one basic residue (mostly arginine) followed by two hydrophobic residues. These S4 basic side chains participate in a state-dependent internal salt-bridge network with at least four acidic residues in S1-S3. The signature of voltage-dependent activation in electrophysiology experiments is a transient current (termed gating or sensing current) upon a change in applied membrane potential as the basic side chains in S4 move across the membrane electric field. Thus, the unique structural features of the VSD architecture allow for competing requirements: maintaining a series of stable transmembrane conformations, while allowing charge motion, as briefly reviewed here.

  7. Stray voltage mitigation

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

    2008-04-09

    This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

  8. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  9. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  10. S4HARA: System for HIV/AIDS resource allocation

    Directory of Open Access Journals (Sweden)

    Carter Michael W

    2008-03-01

    Full Text Available Abstract Background HIV/AIDS resource allocation decisions are influenced by political, social, ethical and other factors that are difficult to quantify. Consequently, quantitative models of HIV/AIDS resource allocation have had limited impact on actual spending decisions. We propose a decision-support System for HIV/AIDS Resource Allocation (S4HARA that takes into consideration both principles of efficient resource allocation and the role of non-quantifiable influences on the decision-making process for resource allocation. Methods S4HARA is a four-step spreadsheet-based model. The first step serves to identify the factors currently influencing HIV/AIDS allocation decisions. The second step consists of prioritizing HIV/AIDS interventions. The third step involves allocating the budget to the HIV/AIDS interventions using a rational approach. Decision-makers can select from several rational models of resource allocation depending on availability of data and level of complexity. The last step combines the results of the first and third steps to highlight the influencing factors that act as barriers or facilitators to the results suggested by the rational resource allocation approach. Actionable recommendations are then made to improve the allocation. We illustrate S4HARA in the context of a primary healthcare clinic in South Africa. Results The clinic offers six types of HIV/AIDS interventions and spends US$750,000 annually on these programs. Current allocation decisions are influenced by donors, NGOs and the government as well as by ethical and religious factors. Without additional funding, an optimal allocation of the total budget suggests that the portion allotted to condom distribution be increased from 1% to 15% and the portion allotted to prevention and treatment of opportunistic infections be increased from 43% to 71%, while allocation to other interventions should decrease. Conclusion Condom uptake at the clinic should be increased by

  11. Electron hopping and optic phonons in Eu3S4

    International Nuclear Information System (INIS)

    Guentherodt, G.

    1981-01-01

    Raman scattering on single crystals of Eu 3 S 4 does not show the allowed q=o phonon modes in the cubic phase and exhibits no new modes in the distorted low temperature phase (T 2- ions. This mode does not show any anomaly near the charge order -disorder phase transition Tsub(t)=186 K. Temperature tunable spin fluctuations associated with the temperature activated Eu 2+ → Eu 3+ electron hopping are detected in the scattering intensity, superimposed on the usual thermal spin disorder. (author)

  12. Entanglement entropy and duality in AdS4

    Directory of Open Access Journals (Sweden)

    Ioannis Bakas

    2015-07-01

    Full Text Available Small variations of the entanglement entropy δS and the expectation value of the modular Hamiltonian δE are computed holographically for circular entangling curves in the boundary of AdS4, using gravitational perturbations with general boundary conditions in spherical coordinates. Agreement with the first law of thermodynamics, δS=δE, requires that the line element of the entangling curve remains constant. In this context, we also find a manifestation of electric–magnetic duality for the entanglement entropy and the corresponding modular Hamiltonian, following from the holographic energy–momentum/Cotton tensor duality.

  13. S4HARA: System for HIV/AIDS resource allocation.

    Science.gov (United States)

    Lasry, Arielle; Carter, Michael W; Zaric, Gregory S

    2008-03-26

    HIV/AIDS resource allocation decisions are influenced by political, social, ethical and other factors that are difficult to quantify. Consequently, quantitative models of HIV/AIDS resource allocation have had limited impact on actual spending decisions. We propose a decision-support System for HIV/AIDS Resource Allocation (S4HARA) that takes into consideration both principles of efficient resource allocation and the role of non-quantifiable influences on the decision-making process for resource allocation. S4HARA is a four-step spreadsheet-based model. The first step serves to identify the factors currently influencing HIV/AIDS allocation decisions. The second step consists of prioritizing HIV/AIDS interventions. The third step involves allocating the budget to the HIV/AIDS interventions using a rational approach. Decision-makers can select from several rational models of resource allocation depending on availability of data and level of complexity. The last step combines the results of the first and third steps to highlight the influencing factors that act as barriers or facilitators to the results suggested by the rational resource allocation approach. Actionable recommendations are then made to improve the allocation. We illustrate S4HARA in the context of a primary healthcare clinic in South Africa. The clinic offers six types of HIV/AIDS interventions and spends US$750,000 annually on these programs. Current allocation decisions are influenced by donors, NGOs and the government as well as by ethical and religious factors. Without additional funding, an optimal allocation of the total budget suggests that the portion allotted to condom distribution be increased from 1% to 15% and the portion allotted to prevention and treatment of opportunistic infections be increased from 43% to 71%, while allocation to other interventions should decrease. Condom uptake at the clinic should be increased by changing the condom distribution policy from a pull system to a push

  14. Sensing charges of the Ciona intestinalis voltage-sensing phosphatase.

    Science.gov (United States)

    Villalba-Galea, Carlos A; Frezza, Ludivine; Sandtner, Walter; Bezanilla, Francisco

    2013-11-01

    Voltage control over enzymatic activity in voltage-sensitive phosphatases (VSPs) is conferred by a voltage-sensing domain (VSD) located in the N terminus. These VSDs are constituted by four putative transmembrane segments (S1 to S4) resembling those found in voltage-gated ion channels. The putative fourth segment (S4) of the VSD contains positive residues that likely function as voltage-sensing elements. To study in detail how these residues sense the plasma membrane potential, we have focused on five arginines in the S4 segment of the Ciona intestinalis VSP (Ci-VSP). After implementing a histidine scan, here we show that four arginine-to-histidine mutants, namely R223H to R232H, mediate voltage-dependent proton translocation across the membrane, indicating that these residues transit through the hydrophobic core of Ci-VSP as a function of the membrane potential. These observations indicate that the charges carried by these residues are sensing charges. Furthermore, our results also show that the electrical field in VSPs is focused in a narrow hydrophobic region that separates the extracellular and intracellular space and constitutes the energy barrier for charge crossing.

  15. Uncooled tunneling infrared sensor

    Science.gov (United States)

    Kenny, Thomas W. (Inventor); Kaiser, William J. (Inventor); Podosek, Judith A. (Inventor); Vote, Erika C. (Inventor); Muller, Richard E. (Inventor); Maker, Paul D. (Inventor)

    1995-01-01

    An uncooled infrared tunneling sensor in which the only moving part is a diaphragm which is deflected into contact with a micromachined silicon tip electrode prepared by a novel lithographic process. Similarly prepared deflection electrodes employ electrostatic force to control the deflection of a silicon nitride, flat diaphragm membrane. The diaphragm exhibits a high resonant frequency which reduces the sensor's sensitivity to vibration. A high bandwidth feedback circuit controls the tunneling current by adjusting the deflection voltage to maintain a constant deflection of the membrane. The resulting infrared sensor can be miniaturized to pixel dimensions smaller than 100 .mu.m. An alternative embodiment is implemented using a corrugated membrane to permit large deflection without complicated clamping and high deflection voltages. The alternative embodiment also employs a pinhole aperture in a membrane to accommodate environmental temperature variation and a sealed chamber to eliminate environmental contamination of the tunneling electrodes and undesireable accoustic coupling to the sensor.

  16. Energy harvesting in high voltage measuring techniques

    International Nuclear Information System (INIS)

    Żyłka, Pawel; Doliński, Marcin

    2016-01-01

    The paper discusses selected problems related to application of energy harvesting (that is, generating electricity from surplus energy present in the environment) to supply autonomous ultra-low-power measurement systems applicable in high voltage engineering. As a practical example of such implementation a laboratory model of a remote temperature sensor is presented, which is self-powered by heat generated in a current-carrying busbar in HV- switchgear. Presented system exploits a thermoelectric harvester based on a passively cooled Peltier module supplying micro-power low-voltage dc-dc converter driving energy-efficient temperature sensor, microcontroller and a fibre-optic transmitter. Performance of the model in laboratory simulated conditions are presented and discussed. (paper)

  17. Biophysical characterization of the fluorescent protein voltage probe VSFP2.3 based on the voltage-sensing domain of Ci-VSP

    DEFF Research Database (Denmark)

    Lundby, Alicia; Akemann, Walther; Knöpfel, Thomas

    2010-01-01

    A voltage sensitive phosphatase was discovered in the ascidian Ciona intestinalis. The phosphatase, Ci-VSP, contains a voltage-sensing domain homologous to those known from voltage-gated ion channels, but unlike ion channels, the voltage-sensing domain of Ci-VSP can reside in the cell membrane...... as a monomer. We fused the voltage-sensing domain of Ci-VSP to a pair of fluorescent reporter proteins to generate a genetically encodable voltage-sensing fluorescent probe, VSFP2.3. VSFP2.3 is a fluorescent voltage probe that reports changes in membrane potential as a FRET (fluorescence resonance energy....... Neutralization of an arginine in S4, previously suggested to be a sensing charge, and measuring associated sensing currents indicate that this charge is likely to reside at the membrane-aqueous interface rather than within the membrane electric field. The data presented give us insights into the voltage-sensing...

  18. Charge Transfer in Collisions of S^4+ with H.

    Science.gov (United States)

    Stancil, P. C.; Turner, A. R.; Cooper, D. L.; Schultz, D. R.; Rakovic, M. J.; Fritsch, W.; Zygelman, B.

    2001-05-01

    Charge transfer processes due to collisions of ground state S^4+ ions with atomic hydrogen were investigated for energies between 1 meV/u and 10 MeV/u using the quantum-mechanical molecular-orbital close-coupling (MOCC), atomic-orbital close-coupling, classical trajectory Monte Carlo (CTMC), and continuum distorted wave methods. The MOCC calculations utilized ab initio adiabatic potentials and nonadiabatic radial coupling matrix elements obtained with the spin-coupled valence-bond approach. A number of variants of the CTMC approach were explored, including different momentum and radial distributions for the initial state, as well as effective charge and quantum-defect models to determine the corresponding quantum state after capture into final partially-stripped S^3+ excited classical states. Hydrogen target isotope effects were explored and rate coefficients for temperatures between 100 and 10^6 K will be presented

  19. Electron capture in collisions of S4+ with atomic hydrogen

    Science.gov (United States)

    Stancil, P. C.; Turner, A. R.; Cooper, D. L.; Schultz, D. R.; Rakovic, M. J.; Fritsch, W.; Zygelman, B.

    2001-06-01

    Charge transfer processes due to collisions of ground state S4+(3s2 1S) ions with atomic hydrogen are investigated for energies between 1 meV u-1 and 10 MeV u-1 using the quantum mechanical molecular-orbital close-coupling (MOCC), atomic-orbital close-coupling, classical trajectory Monte Carlo (CTMC) and continuum distorted wave methods. The MOCC calculations utilize ab initio adiabatic potentials and nonadiabatic radial coupling matrix elements obtained with the spin-coupled valence-bond approach. A number of variants of the CTMC approach were explored, including different momentum and radial distributions for the initial state, as well as effective charge and quantum-defect models to determine the corresponding quantum state after capture into final partially stripped S3+ excited classical states. Hydrogen target isotope effects are explored and rate coefficients for temperatures between 100 and 106 K are also presented.

  20. Charge Transfer in Collisions of S^4+ with He.

    Science.gov (United States)

    Wang, J. G.; Stancil, P. C.; Turner, A. R.; Cooper, D. L.; Schultz, D. R.; Rakovic, M. J.; Fritsch, W.; Zygelman, B.

    2001-05-01

    Charge transfer processes due to collisions of ground state S^4+ ions with atomic helium were investigated for energies between 0.1 meV/u and 10 MeV/u. Total and state-selective cross sections and rate coefficients were obtained utilizing the quantum-mechanical molecular-orbital close-coupling (MOCC), atomic-orbital close-coupling, classical trajectory Monte Carlo (CTMC), and continuum distorted wave methods. The MOCC calculations utilized ab initio adiabatic potentials and nonadiabatic radial coupling matrix elements obtained with the spin-coupled valence-bond approach. A number of variants of the CTMC approach were also explored. Previous data are limited to an earlier Landau-Zener calculation of the total rate coefficient for which our results are two orders of magnitude larger. An observed multichannel interference effect in the MOCC results will also be discussed.

  1. Diamagnetism in spinel compound CuIr2S4

    International Nuclear Information System (INIS)

    Yagasaki, K.; Nakama, T.

    2007-01-01

    The diamagnetic susceptibility in CuIr 2 S 4 is independent of temperature up to just below metal-insulator transition temperature. If activation of electrons to higher levels occurs with breaking dimer pairs, the residual electrons at the dimer position and the activated electrons to the anti-bonding orbital make localized free spins giving a Langevin paramagnetism. Assuming no magnetic interaction between the localized free spins, the susceptibility is calculated using the energy gap obtained from the conductivity assumed to be a conventional semiconductor. The calculated results cannot explain the temperature-independent diamagnetism. The real energy gap is too large for thermal electron activation, however, conduction is induced thermally over several orders of magnitude within insulating phase. From the above results, we claimed new conduction mechanism named traveling dimer conduction: dimer shifts its position by electron hopping to neighbor position without electron activation over the energy gap

  2. CMB-S4 and the hemispherical variance anomaly

    Science.gov (United States)

    O'Dwyer, Márcio; Copi, Craig J.; Knox, Lloyd; Starkman, Glenn D.

    2017-09-01

    Cosmic microwave background (CMB) full-sky temperature data show a hemispherical asymmetry in power nearly aligned with the Ecliptic. In real space, this anomaly can be quantified by the temperature variance in the Northern and Southern Ecliptic hemispheres, with the Northern hemisphere displaying an anomalously low variance while the Southern hemisphere appears unremarkable [consistent with expectations from the best-fitting theory, Lambda Cold Dark Matter (ΛCDM)]. While this is a well-established result in temperature, the low signal-to-noise ratio in current polarization data prevents a similar comparison. This will change with a proposed ground-based CMB experiment, CMB-S4. With that in mind, we generate realizations of polarization maps constrained by the temperature data and predict the distribution of the hemispherical variance in polarization considering two different sky coverage scenarios possible in CMB-S4: full Ecliptic north coverage and just the portion of the North that can be observed from a ground-based telescope at the high Chilean Atacama plateau. We find that even in the set of realizations constrained by the temperature data, the low Northern hemisphere variance observed in temperature is not expected in polarization. Therefore, observing an anomalously low variance in polarization would make the hypothesis that the temperature anomaly is simply a statistical fluke more unlikely and thus increase the motivation for physical explanations. We show, within ΛCDM, how variance measurements in both sky coverage scenarios are related. We find that the variance makes for a good statistic in cases where the sky coverage is limited, however, full northern coverage is still preferable.

  3. Disulfide mapping the voltage-sensing mechanism of a voltage-dependent potassium channel.

    Science.gov (United States)

    Nozaki, Tomohiro; Ozawa, Shin-Ichiro; Harada, Hitomi; Kimura, Tomomi; Osawa, Masanori; Shimada, Ichio

    2016-11-17

    Voltage-dependent potassium (Kv) channels allow for the selective permeability of potassium ions in a membrane potential dependent manner, playing crucial roles in neurotransmission and muscle contraction. Kv channel is a tetramer, in which each subunit possesses a voltage-sensing domain (VSD) and a pore domain (PD). Although several lines of evidence indicated that membrane depolarization is sensed as the movement of helix S4 of the VSD, the detailed voltage-sensing mechanism remained elusive, due to the difficulty of structural analyses at resting potential. In this study, we conducted a comprehensive disulfide locking analysis of the VSD using 36 double Cys mutants, in order to identify the proximal residue pairs of the VSD in the presence or absence of a membrane potential. An intramolecular SS-bond was formed between 6 Cys pairs under both polarized and depolarized environment, and one pair only under depolarized environment. The multiple conformations captured by the SS-bond can be divided by two states, up and down, where S4 lies on the extracellular and intracellular sides of the membrane, respectively, with axial rotation of 180°. The transition between these two states is caused by the S4 translocation of 12 Å, enabling allosteric regulation of the gating at the PD.

  4. Design considerations for TES and QET sensors

    International Nuclear Information System (INIS)

    Cabrera, B.

    2000-01-01

    We summarize some of the effects that must be taken into account in the design of superconducting Transition Edge Sensors (TES) and Quasiparticle-trap-assisted Electrothermal-feedback Transition-edge-sensors (QET). For the TES these include determining time constants, maintaining voltage bias, avoid electrothermal oscillations, critical current limitations, and saturation. For QET phonon sensors, voltage bias was conceived to allow the simultaneous biasing of parallel TESs with different transition temperatures, and preventing normal-superconducting phase separation

  5. Coupling between the voltage-sensing and pore domains in a voltage-gated potassium channel.

    Science.gov (United States)

    Schow, Eric V; Freites, J Alfredo; Nizkorodov, Alex; White, Stephen H; Tobias, Douglas J

    2012-07-01

    Voltage-dependent potassium (Kv), sodium (Nav), and calcium channels open and close in response to changes in transmembrane (TM) potential, thus regulating cell excitability by controlling ion flow across the membrane. An outstanding question concerning voltage gating is how voltage-induced conformational changes of the channel voltage-sensing domains (VSDs) are coupled through the S4-S5 interfacial linking helices to the opening and closing of the pore domain (PD). To investigate the coupling between the VSDs and the PD, we generated a closed Kv channel configuration from Aeropyrum pernix (KvAP) using atomistic simulations with experiment-based restraints on the VSDs. Full closure of the channel required, in addition to the experimentally determined TM displacement, that the VSDs be displaced both inwardly and laterally around the PD. This twisting motion generates a tight hydrophobic interface between the S4-S5 linkers and the C-terminal ends of the pore domain S6 helices in agreement with available experimental evidence.

  6. Differential-output B-dot and D-dot monitors for current and voltage measurements on a 20-MA, 3-MV pulsed-power accelerator

    Directory of Open Access Journals (Sweden)

    T. C. Wagoner

    2008-10-01

    Full Text Available We have developed a system of differential-output monitors that diagnose current and voltage in the vacuum section of a 20-MA 3-MV pulsed-power accelerator. The system includes 62 gauges: 3 current and 6 voltage monitors that are fielded on each of the accelerator’s 4 vacuum-insulator stacks, 6 current monitors on each of the accelerator’s 4 outer magnetically insulated transmission lines (MITLs, and 2 current monitors on the accelerator’s inner MITL. The inner-MITL monitors are located 6 cm from the axis of the load. Each of the stack and outer-MITL current monitors comprises two separate B-dot sensors, each of which consists of four 3-mm-diameter wire loops wound in series. The two sensors are separately located within adjacent cavities machined out of a single piece of copper. The high electrical conductivity of copper minimizes penetration of magnetic flux into the cavity walls, which minimizes changes in the sensitivity of the sensors on the 100-ns time scale of the accelerator’s power pulse. A model of flux penetration has been developed and is used to correct (to first order the B-dot signals for the penetration that does occur. The two sensors are designed to produce signals with opposite polarities; hence, each current monitor may be regarded as a single detector with differential outputs. Common-mode-noise rejection is achieved by combining these signals in a 50-Ω balun. The signal cables that connect the B-dot monitors to the balun are chosen to provide reasonable bandwidth and acceptable levels of Compton drive in the bremsstrahlung field of the accelerator. A single 50-Ω cable transmits the output signal of each balun to a double-wall screen room, where the signals are attenuated, digitized (0.5-ns/sample, numerically compensated for cable losses, and numerically integrated. By contrast, each inner-MITL current monitor contains only a single B-dot sensor. These monitors are fielded in opposite-polarity pairs. The two

  7. SOGI-based capacitor voltage feedback active damping in LCL-filtered grid converters

    DEFF Research Database (Denmark)

    Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

    2015-01-01

    The capacitor voltage feedback active damping control is an attractive way to suppress LCL-filter resonance especially for the systems where the capacitor voltage is used for grid synchronization, since no extra sensors are added. The derivative is the core of the capacitor voltage feedback active...... derivative is more suited for capacitor voltage feedback active damping control. Experimental results validate the effectiveness of the proposed method....

  8. based dynamic voltage restorer

    African Journals Online (AJOL)

    HOD

    operation due to presence of increased use of nonlinear loads (computers, microcontrollers ... simulations of a dynamic voltage restorer (DVR) was achieved using MATLAB/Simulink. ..... using Discrete PWM generator, then the IGBT inverter.

  9. Voltage-gated calcium flux mediates Escherichia coli mechanosensation.

    Science.gov (United States)

    Bruni, Giancarlo N; Weekley, R Andrew; Dodd, Benjamin J T; Kralj, Joel M

    2017-08-29

    Electrically excitable cells harness voltage-coupled calcium influx to transmit intracellular signals, typically studied in neurons and cardiomyocytes. Despite intense study in higher organisms, investigations of voltage and calcium signaling in bacteria have lagged due to their small size and a lack of sensitive tools. Only recently were bacteria shown to modulate their membrane potential on the timescale of seconds, and little is known about the downstream effects from this modulation. In this paper, we report on the effects of electrophysiology in individual bacteria. A genetically encoded calcium sensor expressed in Escherichia coli revealed calcium transients in single cells. A fusion sensor that simultaneously reports voltage and calcium indicated that calcium influx is induced by voltage depolarizations, similar to metazoan action potentials. Cytoplasmic calcium levels and transients increased upon mechanical stimulation with a hydrogel, and single cells altered protein concentrations dependent on the mechanical environment. Blocking voltage and calcium flux altered mechanically induced changes in protein concentration, while inducing calcium flux reproduced these changes. Thus, voltage and calcium relay a bacterial sense of touch and alter cellular lifestyle. Although the calcium effectors remain unknown, these data open a host of new questions about E. coli , including the identity of the underlying molecular players, as well as other signals conveyed by voltage and calcium. These data also provide evidence that dynamic voltage and calcium exists as a signaling modality in the oldest domain of life, and therefore studying electrophysiology beyond canonical electrically excitable cells could yield exciting new findings.

  10. A comprehensive analysis and hardware implementation of control strategies for high output voltage DC-DC boost power converter

    OpenAIRE

    Padmanaban, Sanjeevikumar; Grandi, Gabriele; Blaabjerg, Frede; Wheeler, Patrick; Siano, Pierluigi; Hammami, Manel

    2017-01-01

    Classical DC-DC converters used in high voltage direct current (HVDC) power transmission systems, lack in terms of efficiency, reduced transfer gain and increased cost with sensor (voltage/current) numbers. Besides, the internal self-parasitic behavior of the power components reduces the output voltage and efficiency of classical HV converters. This paper deals with extra high-voltage (EHV) dc-dc boost converter by the application of voltage-lift technique to overcome the aforementioned defic...

  11. Chemical sensors are hybrid-input memristors

    Science.gov (United States)

    Sysoev, V. I.; Arkhipov, V. E.; Okotrub, A. V.; Pershin, Y. V.

    2018-04-01

    Memristors are two-terminal electronic devices whose resistance depends on the history of input signal (voltage or current). Here we demonstrate that the chemical gas sensors can be considered as memristors with a generalized (hybrid) input, namely, with the input consisting of the voltage, analyte concentrations and applied temperature. The concept of hybrid-input memristors is demonstrated experimentally using a single-walled carbon nanotubes chemical sensor. It is shown that with respect to the hybrid input, the sensor exhibits some features common with memristors such as the hysteretic input-output characteristics. This different perspective on chemical gas sensors may open new possibilities for smart sensor applications.

  12. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  13. CMOS Integrated Carbon Nanotube Sensor

    International Nuclear Information System (INIS)

    Perez, M. S.; Lerner, B.; Boselli, A.; Lamagna, A.; Obregon, P. D. Pareja; Julian, P. M.; Mandolesi, P. S.; Buffa, F. A.

    2009-01-01

    Recently carbon nanotubes (CNTs) have been gaining their importance as sensors for gases, temperature and chemicals. Advances in fabrication processes simplify the formation of CNT sensor on silicon substrate. We have integrated single wall carbon nanotubes (SWCNTs) with complementary metal oxide semiconductor process (CMOS) to produce a chip sensor system. The sensor prototype was designed and fabricated using a 0.30 um CMOS process. The main advantage is that the device has a voltage amplifier so the electrical measure can be taken and amplified inside the sensor. When the conductance of the SWCNTs varies in response to media changes, this is observed as a variation in the output tension accordingly.

  14. NiCo2S4 nanowires array as an efficient bifunctional electrocatalyst for full water splitting with superior activity

    Science.gov (United States)

    Liu, Danni; Lu, Qun; Luo, Yonglan; Sun, Xuping; Asiri, Abdullah M.

    2015-09-01

    The present communication reports the topotactic conversion of NiCo2O4 nanowires array on carbon cloth (NiCo2O4 NA/CC) into NiCo2S4 NA/CC, which is used as an efficient bifunctional electrocatalyst for water splitting with good durability and superior activity in 1.0 M KOH. This NiCo2S4 NA/CC electrode produces 100 mA cm-2 at an overpotential of 305 mV for hydrogen evolution and 100 mA cm-2 at an overpotential of 340 mV for oxygen evolution. To afford a 10 mA cm-2 water-splitting current, the alkaline water electrolyzer made from NiCo2S4 NA/CC needs a cell voltage of 1.68 V, which is 300 mV less than that for NiCo2O4 NA/CC, and has good stability.The present communication reports the topotactic conversion of NiCo2O4 nanowires array on carbon cloth (NiCo2O4 NA/CC) into NiCo2S4 NA/CC, which is used as an efficient bifunctional electrocatalyst for water splitting with good durability and superior activity in 1.0 M KOH. This NiCo2S4 NA/CC electrode produces 100 mA cm-2 at an overpotential of 305 mV for hydrogen evolution and 100 mA cm-2 at an overpotential of 340 mV for oxygen evolution. To afford a 10 mA cm-2 water-splitting current, the alkaline water electrolyzer made from NiCo2S4 NA/CC needs a cell voltage of 1.68 V, which is 300 mV less than that for NiCo2O4 NA/CC, and has good stability. Electronic supplementary information (ESI) available: Experimental section and ESI Figures. See DOI: 10.1039/c5nr04064g

  15. Low-voltage gyrotrons

    International Nuclear Information System (INIS)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-01-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5–10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%–2% in the submillimeter wavelength region).

  16. Electrocatalytic cermet sensor

    Science.gov (United States)

    Shoemaker, Erika L.; Vogt, Michael C.

    1998-01-01

    A sensor for O.sub.2 and CO.sub.2 gases. The gas sensor includes a plurality of layers driven by a cyclic voltage to generate a unique plot characteristic of the gas in contact with the sensor. The plurality of layers includes an alumina substrate, a reference electrode source of anions, a lower electrical reference electrode of Pt coupled to the reference source of anions, a solid electrolyte containing tungsten and coupled to the lower reference electrode, a buffer layer for preventing flow of Pt ions into the solid electrolyte and an upper catalytically active Pt electrode coupled to the buffer layer.

  17. Electron capture in collisions of S4+ with helium

    International Nuclear Information System (INIS)

    Wang, J.G.; Stancil, P.C.; Turner, A.R.; Cooper, D.L.; Schultz, D.R.; Rakovic, M.J.; Fritsch, W.; Zygelman, B.

    2002-01-01

    Charge transfer due to collisions of ground-state S 4+ (3s 2 1 S) ions with helium is investigated for energies between 0.1 meV u -1 and 10 MeV u -1 . Total and state-selective single electron capture (SEC) cross sections and rate coefficients are obtained utilizing the quantum mechanical molecular-orbital close-coupling (MOCC), atomic-orbital close-coupling (AOCC), classical trajectory Monte Carlo (CTMC) and continuum distorted wave methods. The MOCC calculations utilize ab initio adiabatic potentials and nonadiabatic radial coupling matrix elements obtained with the spin-coupled valence-bond approach. Previous data are limited to a calculation of the total SEC rate coefficient using the Landau-Zener model that is, in comparison to the results presented here, three orders of magnitude smaller. The MOCC SEC cross sections at low energy reveal a multichannel interference effect. True double capture is also investigated with the AOCC and CTMC approaches while autoionizing double capture and transfer ionization (TI) is explored with CTMC. SEC is found to be the dominant process except for E>200 keV u -1 when TI becomes the primary capture channel. Astrophysical implications are briefly discussed. (author)

  18. Electron capture in collisions of S4+ with helium

    Science.gov (United States)

    Wang, J. G.; Turner, A. R.; Cooper, D. L.; Schultz, D. R.; Rakovic, M. J.; Fritsch, W.; Stancil, P. C.; Zygelman, B.

    2002-07-01

    Charge transfer due to collisions of ground-state S4+(3s2 1S) ions with helium is investigated for energies between 0.1 meV u-1 and 10 MeV u-1. Total and state-selective single electron capture (SEC) cross sections and rate coefficients are obtained utilizing the quantum mechanical molecular-orbital close-coupling (MOCC), atomic-orbital close-coupling (AOCC), classical trajectory Monte Carlo (CTMC) and continuum distorted wave methods. The MOCC calculations utilize ab initio adiabatic potentials and nonadiabatic radial coupling matrix elements obtained with the spin-coupled valence-bond approach. Previous data are limited to a calculation of the total SEC rate coefficient using the Landau-Zener model that is, in comparison to the results presented here, three orders of magnitude smaller. The MOCC SEC cross sections at low energy reveal a multichannel interference effect. True double capture is also investigated with the AOCC and CTMC approaches while autoionizing double capture and transfer ionization (TI) is explored with CTMC. SEC is found to be the dominant process except for E>200 keV u-1 when TI becomes the primary capture channel. Astrophysical implications are briefly discussed.

  19. Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

    Science.gov (United States)

    Degtiarenko, Pavel V [Williamsburg, VA; Popov, Vladimir E [Newport News, VA

    2011-03-22

    A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

  20. Device for monitoring cell voltage

    Science.gov (United States)

    Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  1. A thermal sensor for water using self-heated NTC thick-film segmented thermistors

    OpenAIRE

    Nikolić, Maria Vesna; Radojčić, B. M.; Aleksić, Obrad; Luković, Miloljub D.; Nikolić, Pantelija

    2011-01-01

    A simple thermal (heat loss) sensor system was designed in a small plastic tube housing using a negative thermal coefficient (NTC) thick-film thermistor as a self-heating sensor. The voltage power supply [range constant voltage (RCV)-range constant voltage] uses the measured input water temperature to select the applied voltage in steps (up and down) in order to enable operation of the sensor at optimal sensitivity for different water temperatures. The input water temperature was measured usi...

  2. Improved detection of electrical activity with a voltage probe based on a voltage-sensing phosphatase.

    Science.gov (United States)

    Tsutsui, Hidekazu; Jinno, Yuka; Tomita, Akiko; Niino, Yusuke; Yamada, Yoshiyuki; Mikoshiba, Katsuhiko; Miyawaki, Atsushi; Okamura, Yasushi

    2013-09-15

      One of the most awaited techniques in modern physiology is the sensitive detection of spatiotemporal electrical activity in a complex network of excitable cells. The use of genetically encoded voltage probes has been expected to enable such analysis. However, in spite of recent progress, existing probes still suffer from low signal amplitude and/or kinetics too slow to detect fast electrical activity. Here, we have developed an improved voltage probe named Mermaid2, which is based on the voltage-sensor domain of the voltage-sensing phosphatase from Ciona intestinalis and Förster energy transfer between a pair of fluorescent proteins. In mammalian cells, Mermaid2 permits ratiometric readouts of fractional changes of more than 50% over a physiologically relevant voltage range with fast kinetics, and it was used to follow a train of action potentials at frequencies of up to 150 Hz. Mermaid2 was also able to detect single action potentials and subthreshold voltage responses in hippocampal neurons in vitro, in addition to cortical electrical activity evoked by sound stimuli in single trials in living mice.

  3. High frequency breakdown voltage

    International Nuclear Information System (INIS)

    Chu, Thanh Duy.

    1992-03-01

    This report contains information about the effect of frequency on the breakdown voltage of an air gap at standard pressure and temperature, 76 mm Hg and O degrees C, respectively. The frequencies of interest are 47 MHz and 60 MHz. Additionally, the breakdown in vacuum is briefly considered. The breakdown mechanism is explained on the basis of collision and ionization. The presence of the positive ions produced by ionization enhances the field in the gap, and thus determines the breakdown. When a low-frequency voltage is applied across the gap, the breakdown mechanism is the same as that caused by the DC or static voltage. However, when the frequency exceeds the first critical value f c , the positive ions are trapped in the gap, increasing the field considerably. This makes the breakdown occur earlier; in other words, the breakdown voltage is lowered. As the frequency increases two decades or more, the second critical frequency, f ce , is reached. This time the electrons start being trapped in the gap. Those electrons that travel multiple times across the gap before reaching the positive electrode result in an enormous number of electrons and positive ions being present in the gap. The result is a further decrease of the breakdown voltage. However, increasing the frequency does not decrease the breakdown voltage correspondingly. In fact, the associated breakdown field intensity is almost constant (about 29 kV/cm).The reason is that the recombination rate increases and counterbalances the production rate, thus reducing the effect of the positive ions' concentration in the gap. The theory of collision and ionization does not apply to the breakdown in vacuum. It seems that the breakdown in vacuum is primarily determined by the irregularities on the surfaces of the electrodes. Therefore, the effect of frequency on the breakdown, if any, is of secondary importance

  4. High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    Science.gov (United States)

    Shimer, Daniel W.; Lange, Arnold C.

    1995-01-01

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  5. High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    Science.gov (United States)

    Shimer, D.W.; Lange, A.C.

    1995-05-23

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

  6. System for improving measurement accuracy of transducer by measuring transducer temperature and resistance change using thermoelectric voltages

    Science.gov (United States)

    Anderson, Karl F. (Inventor); Parker, Allen R., Jr. (Inventor)

    1993-01-01

    A constant current loop measuring system measures a property including the temperature of a sensor responsive to an external condition being measured. The measuring system includes thermocouple conductors connected to the sensor, sensing first and second induced voltages responsive to the external condition. In addition, the measuring system includes a current generator and reverser generating a constant current, and supplying the constant current to the thermocouple conductors in forward and reverse directions generating first and second measured voltages, and a determining unit receiving the first and second measured voltages from the current generator and reverser, and determining the temperature of the sensor responsive to the first and second measured voltages.

  7. In-situ Monitoring of Internal Local Temperature and Voltage of Proton Exchange Membrane Fuel Cells

    Directory of Open Access Journals (Sweden)

    Chi-Yuan Lee

    2010-06-01

    Full Text Available The distribution of temperature and voltage of a fuel cell are key factors that influence performance. Conventional sensors are normally large, and are also useful only for making external measurements of fuel cells. Centimeter-scale sensors for making invasive measurements are frequently unable to accurately measure the interior changes of a fuel cell. This work focuses mainly on fabricating flexible multi-functional microsensors (for temperature and voltage to measure variations in the local temperature and voltage of proton exchange membrane fuel cells (PEMFC that are based on micro-electro-mechanical systems (MEMS. The power density at 0.5 V without a sensor is 450 mW/cm2, and that with a sensor is 426 mW/cm2. Since the reaction area of a fuel cell with a sensor is approximately 12% smaller than that without a sensor, but the performance of the former is only 5% worse.

  8. In-situ monitoring of internal local temperature and voltage of proton exchange membrane fuel cells.

    Science.gov (United States)

    Lee, Chi-Yuan; Fan, Wei-Yuan; Hsieh, Wei-Jung

    2010-01-01

    The distribution of temperature and voltage of a fuel cell are key factors that influence performance. Conventional sensors are normally large, and are also useful only for making external measurements of fuel cells. Centimeter-scale sensors for making invasive measurements are frequently unable to accurately measure the interior changes of a fuel cell. This work focuses mainly on fabricating flexible multi-functional microsensors (for temperature and voltage) to measure variations in the local temperature and voltage of proton exchange membrane fuel cells (PEMFC) that are based on micro-electro-mechanical systems (MEMS). The power density at 0.5 V without a sensor is 450 mW/cm(2), and that with a sensor is 426 mW/cm(2). Since the reaction area of a fuel cell with a sensor is approximately 12% smaller than that without a sensor, but the performance of the former is only 5% worse.

  9. Digital voltage discriminator

    International Nuclear Information System (INIS)

    Zhou Zhicheng

    1992-01-01

    A digital voltage discriminator is described, which is synthesized by digital comparator and ADC. The threshold is program controllable with high stability. Digital region of confusion is approximately equal to 1.5 LSB. This discriminator has a single channel analyzer function model with channel width of 1.5 LSB

  10. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  11. Geomagnetism and Induced Voltage

    Science.gov (United States)

    Abdul-Razzaq, W.; Biller, R. D.

    2010-01-01

    Introductory physics laboratories have seen an influx of "conceptual integrated science" over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it…

  12. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system...... to unbalanced faults. The compensation of unbalanced voltage sags and voltage unbalance in the CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0........ The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbalances, for the tested cases in the CIGRE LV test network are mainly due to single phase loads and due...

  13. Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage p....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0.......Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage...... problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults...

  14. High voltage disconnect switch position monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Crampton, S W

    1983-08-01

    Unreliable position indication on high-voltage (HV) disconnect switches can result in equipment damage worth many times the cost of a disconnect switch. The benefits and limitations of a number of possible methods of reliably monitoring HV disconnect switches are assessed. Several methods of powering active devices at HV are noted. It is concluded that the most reliable way of monitoring switch position at reasonable cost would use a passive hermetically-sealed blade-position sensor located at HV, with a fibre-optic link between HV and ground. Separate sensors would be used for open and closed position indication. For maximum reliability the fibre-optic link would continue into the relay building. A passive magnetically actuated fibre-optic sensor has been built which demonstrates the feasibility of the concept. The sensor monitors blade position relative to the jaws in three dimensions with high resolution. A design for an improved passive magneto-optic sensor has significantly lower optical losses, allowing a single fibre-optic loop and 3 sensors to monitor closure of all phases of a disconnect switch. A similar loop would monitor switch opening. The improved sensor has a solid copper housing to provide greater immunity to fault currents, and to protect it from the environment and from physical damage. Two methods of providing a protected path for fibre-optics passing from HV to ground are proposed, one using a hollow porcelain switch-support insulator and the other using an additional small-diameter polymer insulator with optical fibres imbedded in its fibreglass core. A number of improvements are recommended which can be made to existing switches to increase their reliability. 16 refs., 13 figs., 1 tab.

  15. Determination of diffusion coefficients for sulfide ions in solid electrolytes on the basis of BaSm2S4 and CaGd2S4

    International Nuclear Information System (INIS)

    Yurlov, I.S.; Ushakova, Yu.N.; Medvedeva, O.V.; Kalinina, L.A.; Shirokova, G.I.; Ananchenko, B.A.

    2007-01-01

    Coefficients of self-diffusion and coefficients of diffusion of the sulfur ion in solid electrolytes BaSm 2 S 4 and CaGd 2 S 4 are determined with recourse to methods of conductometry and potentiostatic chronoamperometry. A vacancy mechanism for the defect formation in solid solutions on the basis of barium thiosamarate and calcium thiogadolynate is proposed [ru

  16. Computational Chemistry of Modified [MFe3S4] and [M2Fe2S4] Clusters: Assessment of Trends in Electronic Structure and Properties

    DEFF Research Database (Denmark)

    Kepp, Kasper Planeta; Ooi, Bee Lean; Christensen, Hans Erik Mølager

    2008-01-01

    The aim of this work is to understand the molecular evolution of iron−sulfur clusters in terms of electronic structure and function. Metal-substituted models of biological [Fe4S4] clusters in oxidation states [MxFe4−xS4]3+/2+/1+ have been studied by density functional theory (M = Cr, Mn, Fe, Co, ...

  17. Electrostatically actuated torsional resonant sensors and switches

    KAUST Repository

    Younis, Mohammad I.

    2016-01-01

    Embodiments in accordance of a torsional resonant sensor disclosure is configured to actuate a beam structure using electrostatic actuation with an AC harmonic load (e.g., AC and DC voltage sources) that is activated upon detecting a particular

  18. Non-contact current and voltage sensing method using a clamshell housing and a ferrite cylinder

    Science.gov (United States)

    Carpenter, Gary D.; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C.; Schappert, Michael

    2016-04-26

    A method of measurement using a detachable current and voltage sensor provides an isolated and convenient technique for to measuring current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  19. Two distinct voltage-sensing domains control voltage sensitivity and kinetics of current activation in CaV1.1 calcium channels.

    Science.gov (United States)

    Tuluc, Petronel; Benedetti, Bruno; Coste de Bagneaux, Pierre; Grabner, Manfred; Flucher, Bernhard E

    2016-06-01

    Alternative splicing of the skeletal muscle CaV1.1 voltage-gated calcium channel gives rise to two channel variants with very different gating properties. The currents of both channels activate slowly; however, insertion of exon 29 in the adult splice variant CaV1.1a causes an ∼30-mV right shift in the voltage dependence of activation. Existing evidence suggests that the S3-S4 linker in repeat IV (containing exon 29) regulates voltage sensitivity in this voltage-sensing domain (VSD) by modulating interactions between the adjacent transmembrane segments IVS3 and IVS4. However, activation kinetics are thought to be determined by corresponding structures in repeat I. Here, we use patch-clamp analysis of dysgenic (CaV1.1 null) myotubes reconstituted with CaV1.1 mutants and chimeras to identify the specific roles of these regions in regulating channel gating properties. Using site-directed mutagenesis, we demonstrate that the structure and/or hydrophobicity of the IVS3-S4 linker is critical for regulating voltage sensitivity in the IV VSD, but by itself cannot modulate voltage sensitivity in the I VSD. Swapping sequence domains between the I and the IV VSDs reveals that IVS4 plus the IVS3-S4 linker is sufficient to confer CaV1.1a-like voltage dependence to the I VSD and that the IS3-S4 linker plus IS4 is sufficient to transfer CaV1.1e-like voltage dependence to the IV VSD. Any mismatch of transmembrane helices S3 and S4 from the I and IV VSDs causes a right shift of voltage sensitivity, indicating that regulation of voltage sensitivity by the IVS3-S4 linker requires specific interaction of IVS4 with its corresponding IVS3 segment. In contrast, slow current kinetics are perturbed by any heterologous sequences inserted into the I VSD and cannot be transferred by moving VSD I sequences to VSD IV. Thus, CaV1.1 calcium channels are organized in a modular manner, and control of voltage sensitivity and activation kinetics is accomplished by specific molecular mechanisms

  20. Structural refinement of the hERG1 pore and voltage-sensing domains with ROSETTA-membrane and molecular dynamics simulations.

    Science.gov (United States)

    Subbotina, Julia; Yarov-Yarovoy, Vladimir; Lees-Miller, James; Durdagi, Serdar; Guo, Jiqing; Duff, Henry J; Noskov, Sergei Yu

    2010-11-01

    The hERG1 gene (Kv11.1) encodes a voltage-gated potassium channel. Mutations in this gene lead to one form of the Long QT Syndrome (LQTS) in humans. Promiscuous binding of drugs to hERG1 is known to alter the structure/function of the channel leading to an acquired form of the LQTS. Expectably, creation and validation of reliable 3D model of the channel have been a key target in molecular cardiology and pharmacology for the last decade. Although many models were built, they all were limited to pore domain. In this work, a full model of the hERG1 channel is developed which includes all transmembrane segments. We tested a template-driven de-novo design with ROSETTA-membrane modeling using side-chain placements optimized by subsequent molecular dynamics (MD) simulations. Although backbone templates for the homology modeled parts of the pore and voltage sensors were based on the available structures of KvAP, Kv1.2 and Kv1.2-Kv2.1 chimera channels, the missing parts are modeled de-novo. The impact of several alignments on the structure of the S4 helix in the voltage-sensing domain was also tested. Herein, final models are evaluated for consistency to the reported structural elements discovered mainly on the basis of mutagenesis and electrophysiology. These structural elements include salt bridges and close contacts in the voltage-sensor domain; and the topology of the extracellular S5-pore linker compared with that established by toxin foot-printing and nuclear magnetic resonance studies. Implications of the refined hERG1 model to binding of blockers and channels activators (potent new ligands for channel activations) are discussed. © 2010 Wiley-Liss, Inc.

  1. A Standard CMOS Humidity Sensor without Post-Processing

    OpenAIRE

    Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

    2011-01-01

    A 2 ?W power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 ?m CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023?10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

  2. Modular sensor network node

    Science.gov (United States)

    Davis, Jesse Harper Zehring [Berkeley, CA; Stark, Jr., Douglas Paul; Kershaw, Christopher Patrick [Hayward, CA; Kyker, Ronald Dean [Livermore, CA

    2008-06-10

    A distributed wireless sensor network node is disclosed. The wireless sensor network node includes a plurality of sensor modules coupled to a system bus and configured to sense a parameter. The parameter may be an object, an event or any other parameter. The node collects data representative of the parameter. The node also includes a communication module coupled to the system bus and configured to allow the node to communicate with other nodes. The node also includes a processing module coupled to the system bus and adapted to receive the data from the sensor module and operable to analyze the data. The node also includes a power module connected to the system bus and operable to generate a regulated voltage.

  3. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.; Abdelghany, Mohamed A.; Elsayed, Mohannad Yomn; Elshurafa, Amro M; Salama, Khaled N.

    2014-01-01

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  4. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  5. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  6. Increased voltage photovoltaic cell

    Science.gov (United States)

    Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

    1985-01-01

    A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

  7. Suppressing voltage transients in high voltage power supplies

    International Nuclear Information System (INIS)

    Lickel, K.F.; Stonebank, R.

    1979-01-01

    A high voltage power supply for an X-ray tubes includes voltage adjusting means, a high voltage transformer, switch means connected to make and interrupt the primary current of the transformer, and over-voltage suppression means to suppress the voltage transient produced when the current is switched on. In order to reduce the power losses in the suppression means, an impedance is connected in the transformer primary circuit on operation of the switch means and is subsequently short-circuited by a switch controlled by a timer after a period which is automatically adjusted to the duration of the transient overvoltage. (U.K.)

  8. Electronically active defects in the Cu2ZnSn(Se,S)4 alloys as revealed by transient photocapacitance spectroscopy

    Science.gov (United States)

    Miller, D. Westley; Warren, Charles W.; Gunawan, Oki; Gokmen, Tayfun; Mitzi, David B.; Cohen, J. David

    2012-10-01

    Transient photocapacitance (TPC) spectra were obtained on a series of Cu2ZnSn(Se,S)4 absorber devices with varying Se:S ratios, providing bandgaps (Eg) between 1 eV and 1.5 eV. Efficiencies varied between 8.3% and 9.3% for devices with Eg ≤ 1.2 eV and were near 6.5% for devices with Eg ≥ 1.4 eV. The TPC spectra revealed a band-tail region with Urbach energies at or below 18 meV for the first group, but in the 25-30 meV range for the higher band-gap samples. A deeper defect band centered near 0.8 eV was also observed in most samples. We identified a correlation between the Urbach energies and the voltage deficit in these devices.

  9. Benchmarking of Voltage Sag Generators

    DEFF Research Database (Denmark)

    Yang, Yongheng; Blaabjerg, Frede; Zou, Zhixiang

    2012-01-01

    The increased penetration of renewable energy systems, like photovoltaic and wind power systems, rises the concern about the power quality and stability of the utility grid. Some regulations for Low Voltage Ride-Through (LVRT) for medium voltage or high voltage applications, are coming into force...

  10. Charge-pump voltage converter

    Science.gov (United States)

    Brainard, John P [Albuquerque, NM; Christenson, Todd R [Albuquerque, NM

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  11. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  12. Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

    DEFF Research Database (Denmark)

    Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

    2017-01-01

    This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... optimization. The proposed method is used to calculate the voltage bands and droop settings of PV inverters at each node by the supervisory controller. The local controller of each PV inverter implements the volt/var control and if necessary, the active power curtailment as per the received settings and based...... on measured local voltages. The advantage of the proposed method is that the calculated reactive power and active power droop settings enable fair contribution of the PV inverters at each node to the voltage regulation. Simulation studies are conducted using DigSilent Power factory software on a simplified...

  13. Electrical and impedance spectroscopy analysis of sol-gel derived spin coated Cu2ZnSnS4 solar cell

    Science.gov (United States)

    Gupta, Goutam Kumar; Garg, Ashish; Dixit, Ambesh

    2018-01-01

    We carried out electrical and impedance studies on solution derived Al:ZnO/ZnO/CdS/Cu2ZnSnS4/Mo/Glass multilayered solar cell structures to understand their impact on photovoltaic performance. The Cu2ZnSnS4 layer is synthesized on a molybdenum (Mo) coated soda lime glass substrate as an absorber and characterized intensively to optimize the absorber physical properties. The optimized Cu2ZnSnS4 is p-type with 5.8 × 1017 cm-3 hole carrier concentration. The depletion width of the junction is around 20.5 nm and the diffusion capacitance is ˜35.5 nF for these devices. We observed relatively large minority carrier life time ˜23 μs for these structures using open voltage decay analysis. The measured Cu2ZnSnS4/MoS2 and Cu2ZnSnS4/CdS interface resistances are 7.6 kΩ and 12.5 kΩ, respectively. The spatial inhomogeneities are considered and the corresponding resistance is ˜11.4 kΩ. The impedance measurements suggest that in conjunction with series resistance ˜350 Ω, the interface and spatial inhomogeneity resistances also give a significant contribution to the photovoltaic performance.

  14. Voltage balancing strategies for serial connection of microbial fuel cells

    Science.gov (United States)

    Khaled, Firas; Ondel, Olivier; Allard, Bruno; Buret, François

    2015-07-01

    The microbial fuel cell (MFC) converts electrochemically organic matter into electricity by means of metabolisms of bacteria. The MFC power output is limited by low voltage and low current characteristics in the range of microwatts or milliwatts per litre. In order to produce a sufficient voltage level (>1.5 V) and sufficient power to supply real applications such as autonomous sensors, it is necessary to either scale-up one single unit or to connect multiple units together. Many topologies of connection are possible as the serial association to improve the output voltage, or the parallel connection to improve the output current or the series/parallel connection to step-up both voltage and current. The association of MFCs in series is a solution to increase the voltage to an acceptable value and to mutualize the unit's output power. The serial association of a large number of MFCs presents several issues. The first one is the hydraulic coupling among MFCs when they share the same substrate. The second one is the dispersion between generators that lead to a non-optimal stack efficiency because the maximum power point (MPP) operation of all MFCs is not permitted. Voltage balancing is a solution to compensate non-uniformities towards MPP. This paper presents solutions to improve the efficiency of a stack of serially connected MFCs through a voltage-balancing circuit. Contribution to the topical issue "Electrical Engineering Symposium (SGE 2014)", edited by Adel Razek

  15. Cu2ZnSnS4 thin films by simple replacement reaction route for solar photovoltaic application

    International Nuclear Information System (INIS)

    Tiwari, Devendra; Chaudhuri, Tapas K.; Ray, Arabinda; Tiwari, Krishan Dutt

    2014-01-01

    A process for deposition of Cu 2 ZnSnS 4 (CZTS) films using replacement of Zn 2+ in ZnS is demonstrated. X-ray diffraction pattern and Raman spectroscopy confirm the formation of pure CZTS. Atomic force microscopy shows the films to be homogeneous and compact with root mean squared roughness of 6 nm. The direct band gap of CZTS films as elucidated by UV–Vis-NIR spectroscopy is 1.45 eV. The CZTS films exhibit p-type conduction with electrical conductivity of 4.6 S/cm. The hole concentration and hole mobility is determined to be 3.6 × 10 17 cm −3 and 1.4 cm 2 V −1 s −1 respectively. Solar cells with structure: graphite/CZTS/CdS/ZnO/SnO 2 :In/Soda lime glass are also fabricated, gave photo-conversion efficiency of 6.17% with open circuit voltage and short circuit current density of 521 mV and 19.13 mA/cm 2 , respectively and a high fill factor of 0.62. The external quantum efficiency of the solar cell lies above 60% in the visible region. - Highlights: • Pure kesterite Cu 2 ZnSnS 4 thin films deposited by replacement reaction route • Energy band gap of films is 1.45 eV. • p-type films with conductivity of 4.6 S/cm and mobility of 1.4 cm 2 S −1 V −1 • Fabrication of Graphite/Cu 2 ZnSnS 4 /CdS/ZnO/SnO 2 :In/Glass solar cell • Solar cell delivered efficiency of 6.17% with high fill factor of 0.62

  16. Rancang Buat Sensor Kekeruhan Air Berbasis Serat Optik Plastik

    OpenAIRE

    Irwan, Indawani

    2017-01-01

    It has been the research concerning about turbidity sensor based on plastic optical fiber is used to measure degree of turbidity water. Turbidity sensor based on plastic optical fiber have two types, there are optical fiber sensor with cladding and without cladding. This sensor was made with different types of lenghts and configuration. Turbidity sensor was made, dippeded into a turbidity water samples. The results showed us that output voltage is not comprabel with turbidity sample concentra...

  17. Taste sensor; Mikaku sensor

    Energy Technology Data Exchange (ETDEWEB)

    Toko, K. [Kyushu University, Fukuoka (Japan)

    1998-03-05

    This paper introduces a taste sensor having a lipid/polymer membrane to work as a receptor of taste substances. The paper describes the following matters: this sensor uses a hollow polyvinyl chloride rod filled with KCl aqueous solution, and placed with silver and silver chloride wires, whose cross section is affixed with a lipid/polymer membrane as a lipid membrane electrode to identify taste from seven or eight kinds of response patterns of electric potential output from the lipid/polymer membrane; measurements of different substances presenting acidic taste, salty taste, bitter taste, sweet taste and flavor by using this sensor identified clearly each taste (similar response is shown to a similar taste even if the substances are different); different responses are indicated on different brands of beers; from the result of measuring a great variety of mineral waters, a possibility was suggested that this taste sensor could be used for water quality monitoring sensors; and application of this taste sensor may be expected as a maturation control sensor for Japanese sake (wine) and miso (bean paste) manufacturing. 2 figs., 1 tab.

  18. Modulating the Voltage-sensitivity of a Genetically Encoded Voltage Indicator.

    Science.gov (United States)

    Jung, Arong; Rajakumar, Dhanarajan; Yoon, Bong-June; Baker, Bradley J

    2017-10-01

    Saturation mutagenesis was performed on a single position in the voltage-sensing domain (VSD) of a genetically encoded voltage indicator (GEVI). The VSD consists of four transmembrane helixes designated S1-S4. The V220 position located near the plasma membrane/extracellular interface had previously been shown to affect the voltage range of the optical signal. Introduction of polar amino acids at this position reduced the voltage-dependent optical signal of the GEVI. Negatively charged amino acids slightly reduced the optical signal by 33 percent while positively charge amino acids at this position reduced the optical signal by 80%. Surprisingly, the range of V220D was similar to that of V220K with shifted optical responses towards negative potentials. In contrast, the V220E mutant mirrored the responses of the V220R mutation suggesting that the length of the side chain plays in role in determining the voltage range of the GEVI. Charged mutations at the 219 position all behaved similarly slightly shifting the optical response to more negative potentials. Charged mutations to the 221 position behaved erratically suggesting interactions with the plasma membrane and/or other amino acids in the VSD. Introduction of bulky amino acids at the V220 position increased the range of the optical response to include hyperpolarizing signals. Combining The V220W mutant with the R217Q mutation resulted in a probe that reduced the depolarizing signal and enhanced the hyperpolarizing signal which may lead to GEVIs that only report neuronal inhibition.

  19. The orientation and molecular movement of a k(+) channel voltage-sensing domain.

    Science.gov (United States)

    Gandhi, Chris S; Clark, Eliana; Loots, Eli; Pralle, Arnd; Isacoff, Ehud Y

    2003-10-30

    Voltage-gated channels operate through the action of a voltage-sensing domain (membrane segments S1-S4) that controls the conformation of gates located in the pore domain (membrane segments S5-S6). Recent structural studies on the bacterial K(v)AP potassium channel have led to a new model of voltage sensing in which S4 lies in the lipid at the channel periphery and moves through the membrane as a unit with a portion of S3. Here we describe accessibility probing and disulfide scanning experiments aimed at determining how well the K(v)AP model describes the Drosophila Shaker potassium channel. We find that the S1-S3 helices have one end that is externally exposed, S3 does not undergo a transmembrane motion, and S4 lies in close apposition to the pore domain in the resting and activated state.

  20. Heat-pump performance: voltage dip/sag, under-voltage and over-voltage

    Directory of Open Access Journals (Sweden)

    William J.B. Heffernan

    2014-12-01

    Full Text Available Reverse cycle air-source heat-pumps are an increasingly significant load in New Zealand and in many other countries. This has raised concern over the impact wide-spread use of heat-pumps may have on the grid. The characteristics of the loads connected to the power system are changing because of heat-pumps. Their performance during under-voltage events such as voltage dips has the potential to compound the event and possibly cause voltage collapse. In this study, results from testing six heat-pumps are presented to assess their performance at various voltages and hence their impact on voltage stability.

  1. Self-powered optical sensor systems

    NARCIS (Netherlands)

    Wu, H.; Emadi, A.; Graaf, G. de; Leijtens, J.A.P.; Wolffenbuttel, R.F.

    2009-01-01

    A 0.35 μm CMOS process has been used for on-chip integration of a sun sensor composed of a 2x2 photodiode array and a current-to-voltage amplifier. Unlike conventional sun sensors, a shade profile proportional to the angle of incidence of incoming light is projected onto the photodiodes. This

  2. Optimized expression and purification of NavAb provide the structural insight into the voltage dependence.

    Science.gov (United States)

    Irie, Katsumasa; Haga, Yukari; Shimomura, Takushi; Fujiyoshi, Yoshinori

    2018-01-01

    Voltage-gated sodium channels are crucial for electro-signalling in living systems. Analysis of the molecular mechanism requires both fine electrophysiological evaluation and high-resolution channel structures. Here, we optimized a dual expression system of NavAb, which is a well-established standard of prokaryotic voltage-gated sodium channels, for E. coli and insect cells using a single plasmid vector to analyse high-resolution protein structures and measure large ionic currents. Using this expression system, we evaluated the voltage dependence and determined the crystal structures of NavAb wild-type and two mutants, E32Q and N49K, whose voltage dependence were positively shifted and essential interactions were lost in voltage sensor domain. The structural and functional comparison elucidated the molecular mechanisms of the voltage dependence of prokaryotic voltage-gated sodium channels. © 2017 Federation of European Biochemical Societies.

  3. Study on quench detection of the KSTAR CS coil with CDA+MIK compensation of inductive voltages

    Energy Technology Data Exchange (ETDEWEB)

    An, Seok Chan; Kim, Jin Sub [Yonsei University, Seoul (Korea, Republic of); Chu, Yong [National Fusion Research Institute(NFRI), Daejeon (Korea, Republic of)

    2016-03-15

    Quench Detection System (QDS) is essential to guarantee the stable operation of the Korea Superconducting Tokamak Advanced Research (KSTAR) Poloidal Field (PF) magnet system because the stored energy in the magnet system is very large. For the fast response, voltage-based QDS has been used. Co-wound voltage sensors and balanced bridge circuits were applied to eliminate the inductive voltages generated during the plasma operation. However, as the inductive voltages are hundreds times higher than the quench detection voltage during the pulse-current operation, Central Difference Averaging (CDA) and MIK, where I and K stand for mutual coupling indexes of different circuits, which is an active cancellation of mutually generated voltages have been suggested and studied. In this paper, the CDA and MIK technique were applied to the KSTAR magnet for PF magnet quench detection. The calculated inductive voltages from the MIK and measured voltages from the CDA circuits were compared to eliminate the inductive voltages at result signals.

  4. Study on quench detection of the KSTAR CS coil with CDA+MIK compensation of inductive voltages

    International Nuclear Information System (INIS)

    An, Seok Chan; Kim, Jin Sub; Chu, Yong

    2016-01-01

    Quench Detection System (QDS) is essential to guarantee the stable operation of the Korea Superconducting Tokamak Advanced Research (KSTAR) Poloidal Field (PF) magnet system because the stored energy in the magnet system is very large. For the fast response, voltage-based QDS has been used. Co-wound voltage sensors and balanced bridge circuits were applied to eliminate the inductive voltages generated during the plasma operation. However, as the inductive voltages are hundreds times higher than the quench detection voltage during the pulse-current operation, Central Difference Averaging (CDA) and MIK, where I and K stand for mutual coupling indexes of different circuits, which is an active cancellation of mutually generated voltages have been suggested and studied. In this paper, the CDA and MIK technique were applied to the KSTAR magnet for PF magnet quench detection. The calculated inductive voltages from the MIK and measured voltages from the CDA circuits were compared to eliminate the inductive voltages at result signals

  5. N4H9Cu7S4: a hydrazinium-based salt with a layered Cu7S4- framework.

    Science.gov (United States)

    Mitzi, David B

    2007-02-05

    Crystals of a hydrazinium-based copper(I) sulfide salt, N4H9Cu7S4 (1), have been isolated by an ambient temperature solution-based process. In contrast to previously reported hydrazinium salts of main-group metal chalcogenides, which consist of isolated metal chalcogenide anions, and ACu7S4 (A = NH4+, Rb+, Tl+, K+), which contains a more three-dimensional Cu7S4- framework with partial Cu-site occupancy, the structure of 1 [P21, a = 6.8621(4) A, b = 7.9851(4) A, c = 10.0983(5) A, beta = 99.360(1) degrees , Z = 2] is composed of extended two-dimensional Cu7S4- slabs with full Cu-site occupancy. The Cu7S4- slabs are separated by a mixture of hydrazinium and hydrazine moieties. Thermal decomposition of 1 into copper(I) sulfide proceeds at a significantly lower temperature than that observed for analogous hydrazinium salts of previously considered metal chalcogenides, completing the transition at temperatures as low as 120 degrees C. Solutions of 1 may be used in the solution deposition of a range of Cu-containing chalcogenide films.

  6. High voltage isolation transformer

    Science.gov (United States)

    Clatterbuck, C. H.; Ruitberg, A. P. (Inventor)

    1985-01-01

    A high voltage isolation transformer is provided with primary and secondary coils separated by discrete electrostatic shields from the surfaces of insulating spools on which the coils are wound. The electrostatic shields are formed by coatings of a compound with a low electrical conductivity which completely encase the coils and adhere to the surfaces of the insulating spools adjacent to the coils. Coatings of the compound also line axial bores of the spools, thereby forming electrostatic shields separating the spools from legs of a ferromagnetic core extending through the bores. The transformer is able to isolate a high constant potential applied to one of its coils, without the occurrence of sparking or corona, by coupling the coatings, lining the axial bores to the ferromagnetic core and by coupling one terminal of each coil to the respective coating encasing the coil.

  7. Effect of interfacial SiO2- y layer and defect in HfO2- x film on flat-band voltage of HfO2- x /SiO2- y stacks for backside-illuminated CMOS image sensors

    Science.gov (United States)

    Na, Heedo; Lee, Jimin; Jeong, Juyoung; Kim, Taeho; Sohn, Hyunchul

    2018-03-01

    In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO2- x ) film and the influence of the quality of the SiO2- y interlayer on the nature of flat-band voltage ( V fb) in TiN/HfO/SiO2- y /p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C- V and J- E analyses, the V fb behavior was significantly affected by the characteristics of the SiO2- y interlayer and the non-lattice oxygen fraction in the HfO2- x films. The HfO2- x /native SiO2- y stack presented a V fb of - 1.01 V for HfO2- x films with an oxygen gas fraction of 5% during sputtering. Additionally, the V fb of the HfO2- x /native SiO2- y stack could be controlled from - 1.01 to - 0.56 V by changing the deposition conditions of the HfO2- x film with the native SiO2- y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.

  8. Observations of sensor bias dependent cluster centroid shifts in a prototype sensor for the LHCb Vertex Locator detector

    CERN Document Server

    Papadelis, Aras

    2006-01-01

    We present results from a recent beam test of a prototype sensor for the LHCb Vertex Locator detector, read out with the Beetle 1.3 front-end chip. We have studied the effect of the sensor bias voltage on the reconstructed cluster positions in a sensor placed in a 120GeV pion beam at a 10° incidence angle. We find an unexplained sysematic shift in the reconstructed cluster centroid when increasing the bias voltage on an already overdepleted sensor. The shift is independent of strip pitch and sensor thickness.

  9. Pulse-voltage fast generator

    International Nuclear Information System (INIS)

    Valeev, R.I.; Nikiforov, M.G.; Kharchenko, A.F.

    1988-01-01

    The design is described and the test results of a four-channel pulse-voltage generator with maximum output voltage 200 kV are presented. The measurement results of generator triggering time depending on the value and polarity of the triggering voltage pulse for different triggering circuits are presented. The tests have shown stable triggering of all four channels of the generator in the range up to 40 % from selfbreakdown voltage. The generator triggering delay in the given range is <25 ns, asynchronism in channel triggering is <±1 ns

  10. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  11. Biophysical characterization of the fluorescent protein voltage probe VSFP2.3 based on the voltage-sensing domain of Ci-VSP.

    Science.gov (United States)

    Lundby, Alicia; Akemann, Walther; Knöpfel, Thomas

    2010-11-01

    A voltage sensitive phosphatase was discovered in the ascidian Ciona intestinalis. The phosphatase, Ci-VSP, contains a voltage-sensing domain homologous to those known from voltage-gated ion channels, but unlike ion channels, the voltage-sensing domain of Ci-VSP can reside in the cell membrane as a monomer. We fused the voltage-sensing domain of Ci-VSP to a pair of fluorescent reporter proteins to generate a genetically encodable voltage-sensing fluorescent probe, VSFP2.3. VSFP2.3 is a fluorescent voltage probe that reports changes in membrane potential as a FRET (fluorescence resonance energy transfer) signal. Here we report sensing current measurements from VSFP2.3, and show that VSFP2.3 carries 1.2 e sensing charges, which are displaced within 1.5 ms. The sensing currents become faster at higher temperatures, and the voltage dependence of the decay time constants is temperature dependent. Neutralization of an arginine in S4, previously suggested to be a sensing charge, and measuring associated sensing currents indicate that this charge is likely to reside at the membrane-aqueous interface rather than within the membrane electric field. The data presented give us insights into the voltage-sensing mechanism of Ci-VSP, which will allow us to further improve the sensitivity and kinetics of the family of VSFP proteins.

  12. A grid-voltage-sensorless resistive active power filter with series LC-filter

    DEFF Research Database (Denmark)

    Bai, Haofeng; Wang, Xiongfei; Blaabjerg, Frede

    2017-01-01

    Voltage-sensorless control has been investigated for Voltage Source Inverters (VSIs) for many years due to the reduced system cost and potentially improved system reliability. The VSI based Resistive Active Power Filters (R-APFs) are now widely used to prevent the harmonic resonance in power...... distribution network, for which the voltage sensors are needed in order to obtain the current reference. In this paper a grid-voltage-sensorless control strategy is proposed for the R-APF with series LC-filter. Unlike the traditional resistance emulation method, this proposed control method re...

  13. A Grid-Voltage-Sensorless Resistive Active Power Filter with Series LC-Filter

    DEFF Research Database (Denmark)

    Bai, Haofeng; Wang, Xiongfei; Blaabjerg, Frede

    2018-01-01

    Voltage-sensorless control has been investigated for Voltage Source Inverters (VSIs) for many years due to the reduced system cost and potentially improved system reliability. The VSI based Resistive Active Power Filters (R-APFs) are now widely used to prevent the harmonic resonance in power...... distribution network, for which the voltage sensors are needed in order to obtain the current reference. In this paper a grid-voltage-sensorless control strategy is proposed for the R-APF with series LC-filter. Unlike the traditional resistance emulation method, this proposed control method re...

  14. Temporary over voltages in the high voltage networks

    International Nuclear Information System (INIS)

    Vukelja, Petar; Naumov, Radomir; Mrvic, Jovan; Minovski, Risto

    2001-01-01

    The paper treats the temporary over voltages that may arise in the high voltage networks as a result of: ground faults, loss of load, loss of one or two phases and switching operation. Based on the analysis, the measures for their limitation are proposed. (Original)

  15. Light-cone gauge formulation for AdS4 x CP3

    International Nuclear Information System (INIS)

    Uvarov, D.V.

    2011-01-01

    We review the Type IIA superstring on the AdS 4 x CP 3 background in the k-symmetry light-cone gauge characterized by the choice of the lightlike directions from the D = 3 Minkowski boundary of AdS 4 both in the Lagrangian and Hamiltonian formulations

  16. Different proportions of C/KCu7S4 hybrid structure for high-performance supercapacitors

    Science.gov (United States)

    Dai, Shuge; Xi, Yi; Hu, Chenguo; Yue, Xule; Cheng, Lu; Wang, Guo

    2014-10-01

    KCu7S4 has the channel structure and minor resistance. Its double larger channels ensure that the ions can well exchange with other's, at the same time, can shorten the ionic diffusion path and improve the ionic and electronic transport. So KCu7S4 shows good electrochemical property. The paper reports a novel and high performance supercapacitor based on hybrid carbon particles and KCu7S4 (C/KCu7S4) electrode. For the hybrid structure with different proportions of C and KCu7S4, the C/KCu7S4 (1:10) hybrid supercapacitor shows preferable electrochemical performance and large specific capacitance (469 mF cm-2) at high charge-discharge rate (2 mA), still retaining ∼95% of the capacitance over 5000 cycles by charge-discharge process at a fixed current of 10 mA. Three supercapacitor units in series can light 50 light-emitting diodes (LEDs) for 2.5 min, 10 LEDs for 4 min, one LED for 5.5 min. The much-increased capacity, rate capability, and cycling stability may be attributed to the superionic conductive KCu7S4 nanowires and C/KCu7S4 hybrid structure, which improve ionic and electronic transport, enhance the kinetics of redox reactions through the electrode system.

  17. Voltage-gated proton channel is expressed on phagosomes

    International Nuclear Information System (INIS)

    Okochi, Yoshifumi; Sasaki, Mari; Iwasaki, Hirohide; Okamura, Yasushi

    2009-01-01

    Voltage-gated proton channel has been suggested to help NADPH oxidase activity during respiratory burst of phagocytes through its activities of compensating charge imbalance and regulation of pH. In phagocytes, robust production of reactive oxygen species occurs in closed membrane compartments, which are called phagosomes. However, direct evidence for the presence of voltage-gated proton channels in phagosome has been lacking. In this study, the expression of voltage-gated proton channels was studied by Western blot with the antibody specific to the voltage-sensor domain protein, VSOP/Hv1, that has recently been identified as the molecular correlate for the voltage-gated proton channel. Phagosomal membranes of neutrophils contain VSOP/Hv1 in accordance with subunits of NADPH oxidases, gp91, p22, p47 and p67. Superoxide anion production upon PMA activation was significantly reduced in neutrophils from VSOP/Hv1 knockout mice. These are consistent with the idea that voltage-gated proton channels help NADPH oxidase in phagocytes to produce reactive oxygen species.

  18. MFTF sensor verification computer program

    International Nuclear Information System (INIS)

    Chow, H.K.

    1984-01-01

    The design, requirements document and implementation of the MFE Sensor Verification System were accomplished by the Measurement Engineering Section (MES), a group which provides instrumentation for the MFTF magnet diagnostics. The sensors, installed on and around the magnets and solenoids, housed in a vacuum chamber, will supply information about the temperature, strain, pressure, liquid helium level and magnet voltage to the facility operator for evaluation. As the sensors are installed, records must be maintained as to their initial resistance values. Also, as the work progresses, monthly checks will be made to insure continued sensor health. Finally, after the MFTF-B demonstration, yearly checks will be performed as well as checks of sensors as problem develops. The software to acquire and store the data was written by Harry Chow, Computations Department. The acquired data will be transferred to the MFE data base computer system

  19. The prohibition order according to paragraph 5 S. 4 EnWG; Die Untersagungsverfuegung nach paragraph 5 S. 4 EnWG

    Energy Technology Data Exchange (ETDEWEB)

    Rauch, Karsten [WSW Netz GmbH, Wuppertal (Germany)

    2011-02-10

    The introduction of prosecutorial investigation on suspicion of delaying the insolvency proceedings published in the autumn 2010 results to a general question of whether and to what extent a concomitant intervention of the regulatory authorities is indicated. Central to this are the basis for authorization given in paragraph 5 S. 4 Energy Economy Law and the related prohibition authority.

  20. Computer controlled high voltage system

    Energy Technology Data Exchange (ETDEWEB)

    Kunov, B; Georgiev, G; Dimitrov, L [and others

    1996-12-31

    A multichannel computer controlled high-voltage power supply system is developed. The basic technical parameters of the system are: output voltage -100-3000 V, output current - 0-3 mA, maximum number of channels in one crate - 78. 3 refs.

  1. A Voltage Quality Detection Method

    DEFF Research Database (Denmark)

    Chen, Zhe; Wei, Mu

    2008-01-01

    This paper presents a voltage quality detection method based on a phase-locked loop (PLL) technique. The technique can detect the voltage magnitude and phase angle of each individual phase under both normal and fault power system conditions. The proposed method has the potential to evaluate various...

  2. Voltage Controlled Dynamic Demand Response

    DEFF Research Database (Denmark)

    Bhattarai, Bishnu Prasad; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Future power system is expected to be characterized by increased penetration of intermittent sources. Random and rapid fluctuations in demands together with intermittency in generation impose new challenges for power balancing in the existing system. Conventional techniques of balancing by large...... central or dispersed generations might not be sufficient for future scenario. One of the effective methods to cope with this scenario is to enable demand response. This paper proposes a dynamic voltage regulation based demand response technique to be applied in low voltage (LV) distribution feeders....... An adaptive dynamic model has been developed to determine composite voltage dependency of an aggregated load on feeder level. Following the demand dispatch or control signal, optimum voltage setting at the LV substation is determined based on the voltage dependency of the load. Furthermore, a new technique...

  3. Transient voltage oscillations in coils

    International Nuclear Information System (INIS)

    Chowdhuri, P.

    1985-01-01

    Magnet coils may be excited into internal voltage oscillations by transient voltages. Such oscillations may electrically stress the magnet's dielectric components to many times its normal stress. This may precipitate a dielectric failure, and the attendant prolonged loss of service and costly repair work. Therefore, it is important to know the natural frequencies of oscillations of a magnet during the design stage, and to determine whether the expected switching transient voltages can excite the magnet into high-voltage internal oscillations. The series capacitance of a winding significantly affects its natural frequencies. However, the series capacitance is difficult to calculate, because it may comprise complex capacitance network, consisting of intra- and inter-coil turn-to-turn capacitances of the coil sections. A method of calculating the series capacitance of a winding is proposed. This method is rigorous but simple to execute. The time-varying transient voltages along the winding are also calculated

  4. Ambient Sensors

    NARCIS (Netherlands)

    Börner, Dirk; Specht, Marcus

    2014-01-01

    This software sketches comprise two custom-built ambient sensors, i.e. a noise and a movement sensor. Both sensors measure an ambient value and process the values to a color gradient (green > yellow > red). The sensors were built using the Processing 1.5.1 development environment. Available under

  5. MAu2GeS4-Chalcogel (M = Co, Ni): Heterogeneous Intra- and Intermolecular Hydroamination Catalysts

    KAUST Repository

    Davaasuren, Bambar

    2017-08-08

    High surface area macroporous chalcogenide aerogels (chalcogels) MAu2GeS4 (M = Co, Ni) were prepared from K2Au2GeS4 precursor and Co(OAc)2 or NiCl2 by one-pot sol-gel metathesis reactions in aqueous media. The MAu2GeS4-chalcogels were screened for catalytic intramolecular hydroamination of 4-pentyn-1-amine substrate at different temperatures. 87% and 58% conversion was achieved at 100 °C, using CoAu2GeS4- and NiAu2GeS4-chalcogels respectively, and the reaction kinetics follows the first order. It was established that the catalytic performance of the aerogels is associated with the M(2+) centers present in the structure. Intermolecular hydroamination of aniline with 1-R-4-ethynylbenzene (R = -H, -OCH3, -Br, -F) was carried out at 100 °C using CoAu2GeS4-chalcogel catalyst, due to its promising catalytic performance. The CoAu2GeS4-chalcogel regioselectively converted the pair of substrates to respective Markovnikov products, (E)-1-(4-R-phenyl)-N-phenylethan-1-imine, with 38% to 60% conversion.

  6. MAu2GeS4-Chalcogel (M = Co, Ni): Heterogeneous Intra- and Intermolecular Hydroamination Catalysts

    KAUST Repository

    Davaasuren, Bambar; Emwas, Abdul-Hamid M.; Rothenberger, Alexander

    2017-01-01

    High surface area macroporous chalcogenide aerogels (chalcogels) MAu2GeS4 (M = Co, Ni) were prepared from K2Au2GeS4 precursor and Co(OAc)2 or NiCl2 by one-pot sol-gel metathesis reactions in aqueous media. The MAu2GeS4-chalcogels were screened for catalytic intramolecular hydroamination of 4-pentyn-1-amine substrate at different temperatures. 87% and 58% conversion was achieved at 100 °C, using CoAu2GeS4- and NiAu2GeS4-chalcogels respectively, and the reaction kinetics follows the first order. It was established that the catalytic performance of the aerogels is associated with the M(2+) centers present in the structure. Intermolecular hydroamination of aniline with 1-R-4-ethynylbenzene (R = -H, -OCH3, -Br, -F) was carried out at 100 °C using CoAu2GeS4-chalcogel catalyst, due to its promising catalytic performance. The CoAu2GeS4-chalcogel regioselectively converted the pair of substrates to respective Markovnikov products, (E)-1-(4-R-phenyl)-N-phenylethan-1-imine, with 38% to 60% conversion.

  7. Programmable differential capacitance-to-voltage converter for MEMS accelerometers

    Science.gov (United States)

    Royo, G.; Sánchez-Azqueta, C.; Gimeno, C.; Aldea, C.; Celma, S.

    2017-05-01

    Capacitive MEMS sensors exhibit an excellent noise performance, high sensitivity and low power consumption. They offer a huge range of applications, being the accelerometer one of its main uses. In this work, we present the design of a capacitance-to-voltage converter in CMOS technology to measure the acceleration from the capacitance variations. It is based on a low-power, fully-differential transimpedance amplifier with low input impedance and a very low input noise.

  8. A CMOS Humidity Sensor for Passive RFID Sensing Applications

    Science.gov (United States)

    Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

    2014-01-01

    This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 μW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs. PMID:24841250

  9. A CMOS Humidity Sensor for Passive RFID Sensing Applications

    Directory of Open Access Journals (Sweden)

    Fangming Deng

    2014-05-01

    Full Text Available This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs.

  10. A CMOS humidity sensor for passive RFID sensing applications.

    Science.gov (United States)

    Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

    2014-05-16

    This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs.

  11. A probe station for testing silicon sensors

    CERN Multimedia

    Ulysse, Fichet

    2017-01-01

    A probe station for testing silicon sensors. The probe station is located inside a dark box that can keep away light during the measurement. The set-up is located in the DSF (Department Silicon Facility). The golden plate is the "chuck" where the sensor is usually placed on. With the help of "manipulators", thin needles can be precisely positioned that can contact the sensor surface. Using these needles and the golden chuck, a high voltage can be applied to the sensor to test its behaviour under high voltage. We will use the silicon sensors that we test here for building prototypes of a highly granular sandwich calorimeter, the CMS HGC (Highly granular Calorimeter) upgrade for High-Luminosity LHC.

  12. Humidity detection using chitosan film based sensor

    Science.gov (United States)

    Nasution, T. I.; Nainggolan, I.; Dalimunthe, D.; Balyan, M.; Cuana, R.; Khanifah, S.

    2018-02-01

    A humidity sensor made of the natural polymer chitosan has been successfully fabricated in the film form by a solution casting method. Humidity testing was performed by placing a chitosan film sensor in a cooling machine room, model KT-2000 Ahu. The testing results showed that the output voltage values of chitosan film sensor increased with the increase in humidity percentage. For the increase in humidity percentage from 30 to 90% showed that the output voltage of chitosan film sensor increased from 32.19 to 138.75 mV. It was also found that the sensor evidenced good repeatability and stability during the testing. Therefore, chitosan has a great potential to be used as new sensing material for the humidity detection of which was cheaper and environmentally friendly.

  13. Temperature and Voltage Coupling to Channel Opening in Transient Receptor Potential Melastatin 8 (TRPM8)*♦

    Science.gov (United States)

    Raddatz, Natalia; Castillo, Juan P.; Gonzalez, Carlos; Alvarez, Osvaldo; Latorre, Ramon

    2014-01-01

    Expressed in somatosensory neurons of the dorsal root and trigeminal ganglion, the transient receptor potential melastatin 8 (TRPM8) channel is a Ca2+-permeable cation channel activated by cold, voltage, phosphatidylinositol 4,5-bisphosphate, and menthol. Although TRPM8 channel gating has been characterized at the single channel and macroscopic current levels, there is currently no consensus regarding the extent to which temperature and voltage sensors couple to the conduction gate. In this study, we extended the range of voltages where TRPM8-induced ionic currents were measured and made careful measurements of the maximum open probability the channel can attain at different temperatures by means of fluctuation analysis. The first direct measurements of TRPM8 channel temperature-driven conformational rearrangements provided here suggest that temperature alone is able to open the channel and that the opening reaction is voltage-independent. Voltage is a partial activator of TRPM8 channels, because absolute open probability values measured with fully activated voltage sensors are less than 1, and they decrease as temperature rises. By unveiling the fast temperature-dependent deactivation process, we show that TRPM8 channel deactivation is well described by a double exponential time course. The fast and slow deactivation processes are temperature-dependent with enthalpy changes of 27.2 and 30.8 kcal mol−1. The overall Q10 for the closing reaction is about 33. A three-tiered allosteric model containing four voltage sensors and four temperature sensors can account for the complex deactivation kinetics and coupling between voltage and temperature sensor activation and channel opening. PMID:25352597

  14. Development of a Tetrathioether (S4) Bifunctional Chelate System for Rh-105

    Science.gov (United States)

    2013-07-01

    olt s...500 0 500 1000 1500 mV olt s -500 0 500 1000 1500 (B) Free Rhodium Chloride Minutes 0 2 4 6 8 10 12 mV olt s 0 2000 4000 mV olt s 0 2000 4000 (C) Rh-S4...Diol prepared in water Minutes 0 2 4 6 8 10 12 mV olts 0 2000 4000 mV olts 0 2000 4000 (D) 105 Rh-S4Diol with cold [Rh-S4(OH)2-Diol] +

  15. Currents of thermally stimulated depolarization in CaIn2S4 single crystals

    International Nuclear Information System (INIS)

    Tagiev, B.G.; Tagiev, O.B.; Dzhabbarov, R.B.; Musaeva, N.N.

    1996-01-01

    The results of investigation into currents of thermally stimulated depolarization in CaIn 2 S 4 monocrystals are presented for the first time. Spectra of thermally stimulated depolarization for In-CaIn S4 -In structures are measured under T=99 K at various rates of heat, times of polarization and times of expectation following switching off of electrical field up to beginning of measurements of shorting. The main parameters of capture cross section, partial factor, concentration of traps, are determined. It is determined that one may observed a biomolecular mechanism with a strong secondary capture in CaIn 2 S 4 monocrystals. 9 refs.; 4 figs

  16. Factorized tree-level scattering in AdS4 x CP3

    International Nuclear Information System (INIS)

    Kalousios, Chrysostomos; Vergu, C.; Volovich, Anastasia

    2009-01-01

    AdS 4 /CFT 3 duality relating IIA string theory on AdS 4 x CP 3 to N = 6 superconformal Chern-Simons theory provides an arena for studying aspects of integrability in a new potentially exactly solvable system. In this paper we explore the tree-level worldsheet scattering for strings on AdS 4 x CP 3 . We compute all bosonic four-, five- and six-point amplitudes in the gauge-fixed action and demonstrate the absence of particle production.

  17. Structural and optical properties of Cu2ZnSnS4 thin film absorbers from ZnS and Cu3SnS4 nanoparticle precursors

    International Nuclear Information System (INIS)

    Lin, Xianzhong; Kavalakkatt, Jaison; Kornhuber, Kai; Levcenko, Sergiu; Lux-Steiner, Martha Ch.; Ennaoui, Ahmed

    2013-01-01

    Cu 2 ZnSnS 4 (CZTS) has been considered as an alternative absorber layer to Cu(In,Ga)Se 2 due to its earth abundant and environmentally friendly constituents, optimal direct band gap of 1.4–1.6 eV and high absorption coefficient in the visible range. In this work, we propose a solution-based chemical route for the preparation of CZTS thin film absorbers by spin coating of the precursor inks composed of Cu 3 SnS 4 and ZnS NPs and annealing in Ar/H 2 S atmosphere. X-ray diffraction and Raman spectroscopy were used to characterize the structural properties. The chemical composition was determined by energy dispersive X-ray spectroscopy. Optical properties of the CZTS thin film absorbers were studied by transmission, reflection and photoluminescence spectroscopy

  18. LOFT voltage insertion calibaration program

    International Nuclear Information System (INIS)

    Tillitt, D.N.; Miyasaki, F.S.

    1975-08-01

    The Loss-of-Fluid Test (LOFT) Facility is an experimental facility built around a ''scaled'' version of a large pressurized water reactor (LPWR). Part of this facility is the Data Acquisition and Visual Display System (DAVDS) as defined by the LOFT System Design Document SDD 1.4.2C. The DAVDS has a 702 data channel recording capability of which 548 are recorded digitally. The DAVDS also contains a Voltage Insertion Calibration Subsystem used to inject precise and known voltage steps into the recording systems. The computer program that controls the Voltage Insertion Calibration Subsystem is presented. 7 references. (auth)

  19. Power-MOSFET Voltage Regulator

    Science.gov (United States)

    Miller, W. N.; Gray, O. E.

    1982-01-01

    Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

  20. Hyperfine structure in 5s4d 3D-5snf transitions of 87Sr

    International Nuclear Information System (INIS)

    Bushaw, B.A.; Kluge, H.J.; Lantzsch, J.; Schwalbach, R.; Stenner, J.; Stevens, H.; Wendt, K.; Zimmer, K.

    1993-01-01

    The hyperfine spectra of the 5s4d 3 D 1 -5s20f, 5s4d 3 D 2 -5s23f, and 5s4d 3 D 3 -5s32f transitions of 87 Sr (I=9/2) have been measured by collinear fast beam laser spectroscopy. The structure in the upper configurations is highly perturbed by fine structure splitting that is of comparable size to the hyperfine interaction energy. These perturbations can be adequately treated with conventional matrix diagonalization methods, using the 5s-electron magnetic dipole interaction term a 5s and the unperturbed fine structure splittings as input parameters. Additionally, hyperfine constants for the lower 5s4d 3 D configurations, including the A- and B-factors and a separation of the individual s- and d-electron contributions to these factors, are derived. (orig.)

  1. Simplifying superstring and D-brane actions in AdS4 x CP3 superbackground

    International Nuclear Information System (INIS)

    Grassi, Pietro Antonio; Sorokin, Dmitri; Wulff, Linus

    2009-01-01

    By making an appropriate choice for gauge fixing kappa-symmetry we obtain a relatively simple form of the actions for a D = 11 superparticle in AdS 4 x S 7 /Z k , and for a D0-brane, fundamental string and D2-branes in the AdS 4 x CP 3 superbackground. They can be used to study various problems of string theory and the AdS 4 /CFT 3 correspondence, especially in regions of the theory which are not reachable by the OSp(6|4)/U(3) x SO(1,3) supercoset sigma-model. In particular, we present a simple form of the gauge-fixed superstring action in AdS 4 x CP 3 and briefly discuss issues of its T-dualization.

  2. Intelligence and Information-Sharing Elements of S.4 and H.R. 1

    National Research Council Canada - National Science Library

    Masse, Todd

    2007-01-01

    Title I of S.4 and Title VII of H.R. 1 include corresponding measures related to enhancing information and intelligence sharing, both horizontally within the Federal Government and vertically between the Federal Government and state...

  3. A Sentinel Sensor Network for Hydrogen Sensing

    Directory of Open Access Journals (Sweden)

    Andrew J. Mason

    2003-02-01

    Full Text Available A wireless sensor network is presented for in-situ monitoring of atmospheric hydrogen concentration. The hydrogen sensor network consists of multiple sensor nodes, equipped with titania nanotube hydrogen sensors, distributed throughout the area of interest; each node is both sensor, and data-relay station that enables extended wide area monitoring without a consequent increase of node power and thus node size. The hydrogen sensor is fabricated from a sheet of highly ordered titania nanotubes, made by anodization of a titanium thick film, to which platinum electrodes are connected. The electrical resistance of the hydrogen sensor varies from 245 Ω at 500 ppm hydrogen, to 10.23 kΩ at 0 ppm hydrogen (pure nitrogen environment. The measured resistance is converted to voltage, 0.049 V at 500 ppm to 2.046 V at 0 ppm, by interface circuitry. The microcontroller of the sensor node digitizes the voltage and transmits the digital information, using intermediate nodes as relays, to a host node that downloads measurement data to a computer for display. This paper describes the design and operation of the sensor network, the titania nanotube hydrogen sensors with an apparent low level resolution of approximately 0.05 ppm, and their integration in one widely useful device.

  4. alpha-helical structural elements within the voltage-sensing domains of a K(+) channel.

    Science.gov (United States)

    Li-Smerin, Y; Hackos, D H; Swartz, K J

    2000-01-01

    Voltage-gated K(+) channels are tetramers with each subunit containing six (S1-S6) putative membrane spanning segments. The fifth through sixth transmembrane segments (S5-S6) from each of four subunits assemble to form a central pore domain. A growing body of evidence suggests that the first four segments (S1-S4) comprise a domain-like voltage-sensing structure. While the topology of this region is reasonably well defined, the secondary and tertiary structures of these transmembrane segments are not. To explore the secondary structure of the voltage-sensing domains, we used alanine-scanning mutagenesis through the region encompassing the first four transmembrane segments in the drk1 voltage-gated K(+) channel. We examined the mutation-induced perturbation in gating free energy for periodicity characteristic of alpha-helices. Our results are consistent with at least portions of S1, S2, S3, and S4 adopting alpha-helical secondary structure. In addition, both the S1-S2 and S3-S4 linkers exhibited substantial helical character. The distribution of gating perturbations for S1 and S2 suggest that these two helices interact primarily with two environments. In contrast, the distribution of perturbations for S3 and S4 were more complex, suggesting that the latter two helices make more extensive protein contacts, possibly interfacing directly with the shell of the pore domain.

  5. α-Helical Structural Elements within the Voltage-Sensing Domains of a K+ Channel

    Science.gov (United States)

    Li-Smerin, Yingying; Hackos, David H.; Swartz, Kenton J.

    2000-01-01

    Voltage-gated K+ channels are tetramers with each subunit containing six (S1–S6) putative membrane spanning segments. The fifth through sixth transmembrane segments (S5–S6) from each of four subunits assemble to form a central pore domain. A growing body of evidence suggests that the first four segments (S1–S4) comprise a domain-like voltage-sensing structure. While the topology of this region is reasonably well defined, the secondary and tertiary structures of these transmembrane segments are not. To explore the secondary structure of the voltage-sensing domains, we used alanine-scanning mutagenesis through the region encompassing the first four transmembrane segments in the drk1 voltage-gated K+ channel. We examined the mutation-induced perturbation in gating free energy for periodicity characteristic of α-helices. Our results are consistent with at least portions of S1, S2, S3, and S4 adopting α-helical secondary structure. In addition, both the S1–S2 and S3–S4 linkers exhibited substantial helical character. The distribution of gating perturbations for S1 and S2 suggest that these two helices interact primarily with two environments. In contrast, the distribution of perturbations for S3 and S4 were more complex, suggesting that the latter two helices make more extensive protein contacts, possibly interfacing directly with the shell of the pore domain. PMID:10613917

  6. Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

    Science.gov (United States)

    Patel, N.; Branch, D. W.; Schamiloglu, E.; Cular, S.

    2015-08-01

    A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO3) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz-100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10-273 ps for DC voltages and 189-813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250-2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115-1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment.

  7. Comparative study of 0° X-cut and Y + 36°-cut lithium niobate high-voltage sensing

    International Nuclear Information System (INIS)

    Patel, N.; Branch, D. W.; Cular, S.; Schamiloglu, E.

    2015-01-01

    A comparison study between Y + 36° and 0° X-cut lithium niobate (LiNbO 3 ) was performed to evaluate the influence of crystal cut on the acoustic propagation to realize a piezoelectric high-voltage sensor. The acoustic time-of-flight for each crystal cut was measured when applying direct current (DC), alternating current (AC), and pulsed voltages. Results show that the voltage-induced shift in the acoustic wave propagation time scaled quadratically with voltage for DC and AC voltages applied to X-cut crystals. For the Y + 36° crystal, the voltage-induced shift scales linearly with DC voltages and quadratically with AC voltages. When applying 5 μs voltage pulses to both crystals, the voltage-induced shift scaled linearly with voltage. For the Y + 36° cut, the voltage-induced shift from applying DC voltages ranged from 10 to 54 ps and 35 to 778 ps for AC voltages at 640 V over the frequency range of 100 Hz–100 kHz. Using the same conditions as the Y + 36° cut, the 0° X-cut crystal sensed a shift of 10–273 ps for DC voltages and 189–813 ps for AC voltage application. For 5 μs voltage pulses, the 0° X-cut crystal sensed a voltage induced shift of 0.250–2 ns and the Y + 36°-cut crystal sensed a time shift of 0.115–1.6 ns. This suggests a frequency sensitive response to voltage where the influence of the crystal cut was not a significant contributor under DC, AC, or pulsed voltage conditions. The measured DC data were compared to a 1-D impedance matrix model where the predicted incremental length changed as a function of voltage. When the voltage source error was eliminated through physical modeling from the uncertainty budget, the combined uncertainty of the sensor (within a 95% confidence interval) decreased to 0.0033% using a Y + 36°-cut crystal and 0.0032% using an X-cut crystal for all the voltage conditions used in this experiment

  8. Facile synthesis of hybrid CNTs/NiCo2S4 composite for high performance supercapacitors

    Science.gov (United States)

    Li, Delong; Gong, Youning; Pan, Chunxu

    2016-07-01

    In this work, a novel carbon nanotubes (CNTs)/NiCo2S4 composite for high performance supercapacitors was prepared via a simple chemical bath deposition combined with a post-anion exchange reaction. The morphologies and phase structures of the composites were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy (Raman), X-ray photoelectron spectroscopy (XPS) and low-temperature sorption of nitrogen (BET). The electro-chemical tests revealed that the CNT/NiCo2S4 composite exhibited high electrochemical performance, because the CNTs were used as a conductive network for the NiCo2S4 hexagonal nanoplates. Compared with pure NiCo2S4 and the mechanically mixed CNTs/NiCo2S4 composite, the CNTs/NiCo2S4 composite electrode material exhibited excellent supercapacitive performance, such as a high specific capacitance up to 1537 F/g (discharge current density of 1 A/g) and an outstanding rate capability of 78.1% retention as the discharge current density increased to 100 A/g. It is therefore expected to be a promising alternative material in the area of energy storage.

  9. Facile synthesis of hybrid CNTs/NiCo2S4 composite for high performance supercapacitors.

    Science.gov (United States)

    Li, Delong; Gong, Youning; Pan, Chunxu

    2016-07-11

    In this work, a novel carbon nanotubes (CNTs)/NiCo2S4 composite for high performance supercapacitors was prepared via a simple chemical bath deposition combined with a post-anion exchange reaction. The morphologies and phase structures of the composites were characterized using scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy (Raman), X-ray photoelectron spectroscopy (XPS) and low-temperature sorption of nitrogen (BET). The electro-chemical tests revealed that the CNT/NiCo2S4 composite exhibited high electrochemical performance, because the CNTs were used as a conductive network for the NiCo2S4 hexagonal nanoplates. Compared with pure NiCo2S4 and the mechanically mixed CNTs/NiCo2S4 composite, the CNTs/NiCo2S4 composite electrode material exhibited excellent supercapacitive performance, such as a high specific capacitance up to 1537 F/g (discharge current density of 1 A/g) and an outstanding rate capability of 78.1% retention as the discharge current density increased to 100 A/g. It is therefore expected to be a promising alternative material in the area of energy storage.

  10. A microwave powered sensor assembly for microwave ovens

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to a microwave powered sensor assembly for micro- wave ovens. The microwave powered sensor assembly comprises a microwave antenna for generating an RF antenna signal in response to microwave radiation at a predetermined excitation frequency. A dc power supply circuit...... of the microwave powered sensor assembly is operatively coupled to the RF antenna signal for extracting energy from the RF antenna signal and produce a power supply voltage. A sensor is connected to the power supply voltage and configured to measure a physical or chemical property of a food item under heating...... in a microwave oven chamber....

  11. Modular High Voltage Power Supply

    Energy Technology Data Exchange (ETDEWEB)

    Newell, Matthew R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-05-18

    The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

  12. Chemoresistive gas sensor

    Science.gov (United States)

    Hirschfeld, T.B.

    1987-06-23

    A chemoresistive gas sensor is provided which has improved sensitivity. A layer of organic semiconductor is disposed between two electrodes which, in turn, are connected to a voltage source. High conductivity material is dispersed within the layer of organic semiconductor in the form of very small particles, or islands. The average interisland spacing is selected so that the predominant mode of current flow is by way of electron funneling. Adsorption of gaseous contaminant onto the layer of organic semiconductor modulates the tunneling current in a quantitative manner. 2 figs.

  13. Reliability criteria for voltage stability

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Carson W; Silverstein, Brian L [Bonneville Power Administration, Portland, OR (United States)

    1994-12-31

    In face of costs pressures, there is need to allocate scare resources more effectively in order to achieve voltage stability. This naturally leads to development of probabilistic criteria and notions of rick management. In this paper it is presented a discussion about criteria for long term voltage stability limited to the case in which the time frames are topically several minutes. (author) 14 refs., 1 fig.

  14. High voltage distributions in RPCs

    International Nuclear Information System (INIS)

    Inoue, Y.; Muranishi, Y.; Nakamura, M.; Nakano, E.; Takahashi, T.; Teramoto, Y.

    1996-01-01

    High voltage distributions on the inner surfaces of RPCs electrodes were calculated by using a two-dimensional resistor network model. The calculated result shows that the surface resistivity of the electrodes should be high, compared to their volume resistivity, to get a uniform high voltage over the surface. Our model predicts that the rate capabilities of RPCs should be inversely proportional to the thickness of the electrodes if the ratio of surface-to-volume resistivity is low. (orig.)

  15. Quaternary Cu2ZnSnS4 quantum dot-sensitized solar cells: Synthesis, passivation and ligand exchange

    Science.gov (United States)

    Bai, Bing; Kou, Dongxing; Zhou, Wenhui; Zhou, Zhengji; Tian, Qingwen; Meng, Yuena; Wu, Sixin

    2016-06-01

    The quaternary Cu2ZnSnS4 (CZTS) QDs had been successfully introduced into quantum dot-sensitized solar cells (QDSC) via hydrolysis approach in our previous work [Green Chem. 2015, vol. 17, p. 4377], but the obtained cell efficiency was still limited by low open-circuit voltage and fill factor. Herein, we use 1-dodecanethiol (DDT) as capping ligand for fairly small-sized CZTS QDs synthesis to improve their intrinsic properties. Since this strong bonded capping ligand can not be replaced by 3-mercaptopropionic acid (MPA) directly, the nature cation (Cu, Zn or Sn)-DDT units of QDs are first exchanged by the preconjugated Cd-oleate via successive ionic layer adsorption and reaction (SILAR) procedure accompanied with the formation of a core/shell structure. The weak bonded oleic acid (OA) can be finally replaced by MPA and the constructed water soluble CZTS/CdSe QDSC achieves an impressive conversion efficiency of 4.70%. The electron transport and recombination dynamic processes are confirmed by intensity-modulated photocurrent spectroscopy (IMPS)/intensity-modulated photovoltage spectroscopy (IMVS) measurements. It is found that the removal of long alkyl chain is conducive to improve the electron transport process and the type-II core/shell structure is beneficial to accelerate electron transport and retard charge recombination. This effective ligand removal strategy is proved to be more convenient for the applying of quaternary QDs in QDSC and would boost a more powerful efficiency in the future work.

  16. The order-disorder transition in Cu2ZnSnS4: A theoretical and experimental study

    International Nuclear Information System (INIS)

    Quennet, Marcel; Ritscher, Anna; Lerch, Martin; Paulus, Beate

    2017-01-01

    In this work the Cu/Zn order-disorder transition in Cu 2 ZnSnS 4 kesterites on Wyckoff positions 2c and 2d was investigated by a structural and electronic analysis in theory and experiment. For experimental investigations stoichiometric samples with different Cu/Zn order, annealed in the temperature range of 473–623 K and afterwards quenched, were used. The optical gaps were determined using the Derivation of Absorption Spectrum Fitting (DASF) method. Furthermore, the order-disorder transition was examined by DFT calculations for a closer analysis of the origins of the reduced band gap, showing a good agreement with experimental data with respect to structural and electronic properties. Our studies show a slight increase of lattice parameter c in the kesterite lattice with increasing disorder. Additionally, a reduced band gap was observed with increasing disorder, which is an effect of newly occurring binding motifs in the disordered kesterite structure. - Highlights: • Experimental and theoretical investigation on the order-disorder transition in kesterites. • Slight enlargements of lattice constants due to disorder in experiment and theory. • Strong band gap fluctuations with decreasing order. • Electronic structure deviations due to changing binding motifs. • Disorder as possible main source of low open-circuit voltages.

  17. A simple structure of Cu2ZnSnS4/CdS solar cells prepared by sputtering

    Science.gov (United States)

    Li, Zhishan; Wang, Shurong; Ma, Xun; Yang, Min; Jiang, Zhi; Liu, Tao; Lu, Yilei; Liu, Sijia

    2017-12-01

    In this work, Cu2ZnSnS4 (CZTS) thin films were grown on Mo-coated Soda-lime-glass (SLG) substrates by annealing of sputtered ZnS/Sn/CuS precursors at 580 ℃ for 15 min. As a try, the CZTS solar cells were fabricated using simple structure of Mo-coated SLG/CZTS/CdS/Al and traditional structure of Mo-coated SLG/CZTS/CdS/i-ZnO/In2O3:SnO2 (ITO)/Al, respectively. The results show that the CZTS device with simple structure can achieve same level of the open circuit voltage (Voc) compared with that of traditional structure. In addition, the power conversion efficiency of 2.95% and 3.59% were obtained with simple structure and traditional structure, respectively. The CZTS solar cell with simple structure provides a promising way and an easy process to prepare high-performance CZTS thin film solar cells which is available to large-scale industrial production in the future.

  18. A Photostable Silicon Rhodamine Platform for Optical Voltage Sensing

    Science.gov (United States)

    Huang, Yi-Lin; Walker, Alison S.; Miller, Evan W.

    2015-01-01

    This paper describes the design and synthesis of a photostable, far-red to near-infrared (NIR) platform for optical voltage sensing. We developed a new, sulfonated silicon rhodamine fluorophore and integrated it with a phenylenevinylene molecular wire to create a Berkeley Red Sensor of Transmembrane potential, or BeRST 1 (“burst”). BeRST 1 is the first member of a class of farred to NIR voltage sensitive dyes that make use of a photoinduced electron transfer (PeT) trigger for optical interrogation of membrane voltage. We show that BeRST 1 displays bright, membrane-localized fluorescence in living cells, high photostability, and excellent voltage sensitivity in neurons. Depolarization of the plasma membrane results in rapid fluorescence increases (24% ΔF/F per 100 mV). BeRST 1 can be used in conjunction with fluorescent stains for organelles, Ca2+ indicators, and voltage-sensitive fluorescent proteins. In addition, the red-shifted spectral profile of BeRST 1, relative to commonly employed optogenetic actuators like ChannelRhodopsin2 (ChR2), which require blue light, enables optical electrophysiology in neurons. The high speed, sensitivity, photostability and long-wavelength fluorescence profiles of BeRST 1 make it a useful platform for the non-invasive, optical dissection of neuronal activity. PMID:26237573

  19. Macroeconomic Assessment of Voltage Sags

    Directory of Open Access Journals (Sweden)

    Sinan Küfeoğlu

    2016-12-01

    Full Text Available The electric power sector has changed dramatically since the 1980s. Electricity customers are now demanding uninterrupted and high quality service from both utilities and authorities. By becoming more and more dependent on the voltage sensitive electronic equipment, the industry sector is the one which is affected the most by voltage disturbances. Voltage sags are one of the most crucial problems for these customers. The utilities, on the other hand, conduct cost-benefit analyses before going through new investment projects. At this point, understanding the costs of voltage sags become imperative for planning purposes. The characteristics of electric power consumption and hence the susceptibility against voltage sags differ considerably among different industry subsectors. Therefore, a model that will address the estimation of worth of electric power reliability for a large number of customer groups is necessary. This paper introduces a macroeconomic model to calculate Customer Voltage Sag Costs (CVSCs for the industry sector customers. The proposed model makes use of analytical data such as value added, annual energy consumption, working hours, and average outage durations and provides a straightforward, credible, and easy to follow methodology for the estimation of CVSCs.

  20. A matter of quantum voltages

    Energy Technology Data Exchange (ETDEWEB)

    Sellner, Bernhard; Kathmann, Shawn M., E-mail: Shawn.Kathmann@pnnl.gov [Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

    2014-11-14

    Voltages inside matter are relevant to crystallization, materials science, biology, catalysis, and aqueous chemistry. The variation of voltages in matter can be measured by experiment, however, modern supercomputers allow the calculation of accurate quantum voltages with spatial resolutions of bulk systems well beyond what can currently be measured provided a sufficient level of theory is employed. Of particular interest is the Mean Inner Potential (V{sub o}) – the spatial average of these quantum voltages referenced to the vacuum. Here we establish a protocol to reliably evaluate V{sub o} from quantum calculations. Voltages are very sensitive to the distribution of electrons and provide metrics to understand interactions in condensed phases. In the present study, we find excellent agreement with measurements of V{sub o} for vitrified water and salt crystals and demonstrate the impact of covalent and ionic bonding as well as intermolecular/atomic interactions. Certain aspects in this regard are highlighted making use of simple model systems/approximations. Furthermore, we predict V{sub o} as well as the fluctuations of these voltages in aqueous NaCl electrolytes and characterize the changes in their behavior as the resolution increases below the size of atoms.

  1. Alpha-Particle Gas-Pressure Sensor

    Science.gov (United States)

    Buehler, M. C.; Bell, L. D.; Hecht, M. H.

    1996-01-01

    An approximate model was developed to establish design curves for the saturation region and a more complete model developed to characterize the current-voltage curves for an alpha-particle pressure sensor. A simple two-parameter current-voltage expression was developed to describe the dependence of the ion current on pressure. The parameters are the saturation-current pressure coefficient and mu/D, the ion mobility/diffusion coefficient. The sensor is useful in the pressure range between 0.1 and 1000 mb using a 1 - mu Ci(241) Am source. Experimental results, taken between 1 and up to 200 mb, show the sensor operates with an anode voltage of 5 V and a sensitivity of 20 fA/mb in nitrogen.

  2. Multipurpose Electric Potential Sensor for Spacecraft Applications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal is based on a new, compact, solid-state electric potential sensor that has over an order of magnitude lower voltage noise than the prior...

  3. Common bus multinode sensor system

    International Nuclear Information System (INIS)

    Kelly, T.F.; Naviasky, E.H.; Evans, W.P.; Jefferies, D.W.; Smith, J.R.

    1988-01-01

    This patent describes a nuclear power plant including a common bus multinode sensor system for sensors in the nuclear power plant, each sensor producing a sensor signal. The system consists of: a power supply providing power; a communication cable coupled to the power supply; plural remote sensor units coupled between the cable and one or more sensors, and comprising: a direct current power supply, connected to the cable and converting the power on the cable into direct current; an analog-to-digital converter connected to the direct current power supply; an oscillator reference; a filter; and an integrated circuit sensor interface connected to the direct current power supply, the analog-to-digital converter, the oscillator crystal and the filter, the interface comprising: a counter receiving a frequency designation word from external to the interface; a phase-frequency comparator connected to the counter; an oscillator connected to the oscillator reference; a timing counter connected to the oscillator, the phase/frequency comparator and the analog-to-digital converter; an analog multiplexer connectable to the sensors and the analog-to-digital converter, and connected to the timing counter; a shift register operatively connected to the timing counter and the analog-to-digital converter; an encoder connected to the shift register and connectable to the filter; and a voltage controlled oscillator connected to the filter and the cable

  4. Analysis of unbalanced sensor in eddy current method of non destructive testing

    International Nuclear Information System (INIS)

    Chegodaev, V.V.

    2001-01-01

    Different types of sensors are used in eddy current method of non-destructive testing. The choosing of sensor type depends on control object. Different types of sensors can have the same schemes of cut-in in device for formation of information signal. The most common scheme of sensor cut-in is presented. The calculation of output voltage when the sensor is on a segment of the control object, which has not defect is made. The conditions of balancing are adduced and it was shown that the balancing of sensor is very difficult. The methods of compensation or account of voltage of an imbalance are indicated. (author)

  5. Limited Scope Design Study for Multi-Sensor Towbody

    Science.gov (United States)

    2016-06-01

    ports 2 Leak sensors 1 Electrical Surface supply voltage 300 V nominal (250–425 Vdc) Towbody output voltages 48/24/12 Vdc Load power...shallow water (អ m) at thousands of current and former Department of Defense (DoD) sites encompassing millions of acres. This design study...addresses the munitions remediation in shallow water problem with a system that uses a Multi-Sensor Towbody (MuST) and surface vessel with support

  6. Invariant differential operators and characters of the AdS4 algebra

    International Nuclear Information System (INIS)

    Dobrev, V K

    2006-01-01

    The aim of this paper is to apply systematically to AdS 4 some modern tools in the representation theory of Lie algebras which are easily generalized to the supersymmetric and quantum group settings and necessary for applications to string theory and integrable models. Here we introduce the necessary representations of the AdS 4 algebra and group. We give explicitly all singular (null) vectors of the reducible AdS 4 Verma modules. These are used to obtain the AdS 4 invariant differential operators. Using this we display a new structure-a diagram involving four partially equivalent reducible representations one of which contains all finite-dimensional irreps of the AdS 4 algebra. We study in more detail the cases involving UIRs, in particular, the Di and the Rac singletons, and the massless UIRs. In the massless case, we discover the structure of sets of 2s 0 - 1 conserved currents for each spin s 0 UIR, s 0 = 1, 3/2,.... All massless cases are contained in a one-parameter subfamily of the quartet diagrams mentioned above, the parameter being the spin s 0 . Further we give the classification of the so(5,C) irreps presented in a diagrammatic way which makes easy the derivation of all character formulae. The paper concludes with a speculation on the possible applications of the character formulae to integrable models

  7. Conserved Residues within the Putative S4–S5 Region Serve Distinct Functions among Thermosensitive Vanilloid Transient Receptor Potential (TRPV) Channels

    Czech Academy of Sciences Publication Activity Database

    Boukalová, Štěpána; Maršáková, Lenka; Teisinger, Jan; Vlachová, Viktorie

    2010-01-01

    Roč. 285, č. 53 (2010), s. 41455-41462 ISSN 0021-9258 R&D Projects: GA ČR GA305/09/0081; GA ČR GAP301/10/1159; GA AV ČR(CZ) IAA600110701; GA MŠk(CZ) 1M0517; GA MŠk(CZ) LC554 Grant - others:Univerzita Karlova(CZ) 26110 Institutional research plan: CEZ:AV0Z50110509 Keywords : vanilloid receptor * voltage sensor * transient receptor potential Subject RIV: FH - Neurology Impact factor: 5.328, year: 2010

  8. Proximity and Force Characteristics of CMC Touch Sensor with Square/Dome-shaped Sensor Elements

    International Nuclear Information System (INIS)

    Kawamura, T; Inaguma, N; Kakizaki, Y; Yamada, H; Tani, K

    2013-01-01

    A tactile sensor called Carbon Micro Coil (CMC) touch sensor was developed by CMC Technology Development Co., Ltd. The sensor's elements used in the experiments of this paper are made of silicon rubber containing CMCs several micrometers in diameter. One of the elements is molded into a square 30 mm on a side and 3 mm thick; the other is a dome 16 mm in diameter and 2 mm height. CMCs in the sensor element contribute to the electrical conductivity and the sensor element is considered to constitute an LCR circuit. When an object approaches to the sensor element or the sensor element is deformed mechanically, the impedance changes, and the CMC sensor detects the impedance changes by measuring the modulation of amplitude and phase of an input excitation signal to the sensor element. The CMC sensor also creates voltage signals of the R- and LC-components separately according to the amplitude and phase modulation. In this paper, the characteristics of the CMC sensor with respect to its proximity and force senses are investigated. First, the output of the CMC sensor with the square-shaped sensor element is measured when an object approaches to the sensor element. Next, the output of the CMC sensor with the dome-shaped sensor element is measured when fine deformations of 1 to 5 μm are applied to the sensor element under variable compression force. The results suggest that the CMC sensor can measure the force variance applied to the sensor element as well as the distance between the sensor element and an object.

  9. Attention Sensor

    NARCIS (Netherlands)

    Börner, Dirk; Kalz, Marco; Specht, Marcus

    2014-01-01

    This software sketch was used in the context of an experiment for the PhD project “Ambient Learning Displays”. The sketch comprises a custom-built attention sensor. The sensor measured (during the experiment) whether a participant looked at and thus attended a public display. The sensor was built

  10. Mitigation of voltage sags in the distribution system with dynamic voltage restorer

    International Nuclear Information System (INIS)

    Viglas, D.; Belan, A.

    2012-01-01

    Dynamic voltage restorer is a custom power device that is used to improve voltage sags or swells in electrical distribution system. The components of the Dynamic Voltage Restorer consist of injection transformers, voltage source inverter, passive filters and energy storage. The main function of the Dynamic voltage restorer is used to inject three phase voltage in series and in synchronism with the grid voltages in order to compensate voltage disturbances. This article deals with mitigation of voltage sags caused by three-phase short circuit. Dynamic voltage restorer is modelled in MATLAB/Simulink. (Authors)

  11. Optimal Sensor Selection for Health Monitoring Systems

    Science.gov (United States)

    Santi, L. Michael; Sowers, T. Shane; Aguilar, Robert B.

    2005-01-01

    Sensor data are the basis for performance and health assessment of most complex systems. Careful selection and implementation of sensors is critical to enable high fidelity system health assessment. A model-based procedure that systematically selects an optimal sensor suite for overall health assessment of a designated host system is described. This procedure, termed the Systematic Sensor Selection Strategy (S4), was developed at NASA John H. Glenn Research Center in order to enhance design phase planning and preparations for in-space propulsion health management systems (HMS). Information and capabilities required to utilize the S4 approach in support of design phase development of robust health diagnostics are outlined. A merit metric that quantifies diagnostic performance and overall risk reduction potential of individual sensor suites is introduced. The conceptual foundation for this merit metric is presented and the algorithmic organization of the S4 optimization process is described. Representative results from S4 analyses of a boost stage rocket engine previously under development as part of NASA's Next Generation Launch Technology (NGLT) program are presented.

  12. Optical diagnostics of lead and PbGa2S4 layered crystal laser plasmas

    International Nuclear Information System (INIS)

    Shuaibov, A.K.; Dashchenko, A.I.; Shevera, I.V.

    2001-01-01

    Paper presents the results of the optic diagnostics of plasma of laser flames formed from lead surface and PbGa 2 S 4 laminar crystal using a neodymium laser. It is shown that the most intensive lines in the lead laser plasma are as follows: 405.7, 368.3, 364.0 nm PbI and 220.4 nm PbII while for the laminar crystal base plasma - the combination of the most intensive lines of PbI and GaI emission. One determined the narrow point of recombination fluxes for the ion and the atomic components of laser plasma of lead and of PbGa 2 S 4 crystal. One conducted comparison study of emission dynamics of PbI and GaI lines in laser plasma of the respective metals and of PbGa 2 S 4 crystal [ru

  13. Relaxation of magnetization in spinel CuCrZrS4

    International Nuclear Information System (INIS)

    Ito, Masakazu; Furuta, Tatsuya; Terada, Norio; Ebisu, Shuji; Nagata, Shoichi

    2012-01-01

    We studied time t dependence of magnetization M(t) of thiospinel CuCrZrS 4 which has a spin-glass freezing. The relaxation of M is observed below T f ≃6K and shows a logarithmic time dependence. This means that a relaxation time τ of CuCrZrS 4 is distributed in a wide time range. Randomness of an arrangement of the Cr and Zr ions in CuCrZrS 4 probably gives rise to a distribution of τ. Temperature T dependence of magnetic viscosity β(T) is understood by a conventional after-effect model with a box-type distribution function of τ.

  14. Exact Results for 't Hooft Loops in Gauge Theories on S^4

    CERN Document Server

    Gomis, Jaume; Pestun, Vasily

    2012-01-01

    The path integral of a general N=2 supersymmetric gauge theory on S^4 is exactly evaluated in the presence of a supersymmetric 't Hooft loop operator. The result we find - obtained using localization techniques - captures all perturbative quantum corrections as well as non-perturbative effects due to instantons and monopoles, which are supported at the north pole, south pole and equator of S^4. As a by-product, our gauge theory calculations successfully confirm the predictions made for 't Hooft loops obtained from the calculation of topological defect correlators in Liouville/Toda conformal field theory.

  15. Pressure-induced metal-insulator transition in spinel compound CuV2S4

    International Nuclear Information System (INIS)

    Okada, H.; Koyama, K.; Hedo, M.; Uwatoko, Y.; Watanabe, K.

    2008-01-01

    In order to investigate the pressure effect on electrical properties of CuV 2 S 4 , we performed the electrical resistivity measurements under high pressures up to 8 GPa for a high-quality polycrystalline sample. The charge density wave (CDW) transition temperatures increase with increasing pressure. The residual resistivity rapidly increases with increasing pressure over 4 GPa, and the temperature dependence of the electrical resistivity at 8 GPa exhibits a semiconducting behavior below about 150 K, indicating that a pressure-induced metal-insulator transition occurs in CuV 2 S 4 at 8 GPa

  16. NiCo2S4 nanorod embedded rGO sheets as electrodes for supercapacitor

    Science.gov (United States)

    Sarkar, Aatreyee; Bera, Supriya; Chakraborty, Amit Kumar

    2018-04-01

    We report the synthesis of a hybrid nanostructure based on NiCo2S4 and reduced graphene oxide (rGO) following a facile hydrothermal method. X-ray diffraction (XRD), and electron microscopy (FESEM and HRTEM) analyses showed rod-like NiCo2S4 nanostructures embedded in rGO sheets. The electrochemical analysis of the synthesized nanohybrid using cyclic voltammetry (CV) and galvanostatic charge discharge (GCD) revealed specific capacitance of 410 F/gm indicating its suitability as a good electrode material for supercapacitor.

  17. The space of harmonic maps of S2 into S4

    International Nuclear Information System (INIS)

    Loo, B.

    1989-05-01

    Every branched superminimal surface of area 4πd in S 4 is shown to arise from a pair of meromorphic functions (f 1 ,f 2 ) of bidegree (d,d) such that f 1 and f 2 have the same ramification divisor. Conditions under which branched superminimal surfaces can be generated from such pairs of functions are derived. For each d ≥ 1 the space of harmonic maps (i.e branched superminimal immersions) of S 2 into S 4 of harmonic degree d is shown to be a connected space of complex dimension 2d+4. (author). 18 refs

  18. Flavor S4xZ2 symmetry and neutrino mixing

    International Nuclear Information System (INIS)

    Zhang He

    2007-01-01

    We present a model of the lepton masses and flavor mixing based on the discrete group S 4 xZ 2 . In this model, all the charged leptons and neutrinos are assigned to the 3 - b arα representation of S 4 in the Yamanouchi bases. The charged lepton and neutrino masses are mainly determined by the vacuum expectation value structures of the Higgs fields. A nearly tri-bimaximal lepton flavor mixing pattern, which is in agreement with the current experimental results, can be accommodated in our model. The neutrino mass spectrum takes the nearly degenerate pattern, and thus can be well tested in the future precise experiments

  19. Ultra-thin Cu2ZnSnS4 solar cell by pulsed laser deposition

    DEFF Research Database (Denmark)

    Cazzaniga, Andrea Carlo; Crovetto, Andrea; Yan, Chang

    2017-01-01

    We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed. At the ......We report on the fabrication of a 5.2% efficiency Cu2ZnSnS4 (CZTS) solar cell made by pulsed laser deposition (PLD) featuring an ultra-thin absorber layer (less than 450 nm). Solutions to the issues of reproducibility and micro-particulate ejection often encountered with PLD are proposed...

  20. Low-Energy Real-Time OS Using Voltage Scheduling Algorithm for Variable Voltage Processors

    OpenAIRE

    Okuma, Takanori; Yasuura, Hiroto

    2001-01-01

    This paper presents a real-time OS based on $ mu $ITRON using proposed voltage scheduling algorithm for variable voltage processors which can vary supply voltage dynamically. The proposed voltage scheduling algorithms assign voltage level for each task dynamically in order to minimize energy consumption under timing constraints. Using the presented real-time OS, running tasks with low supply voltage leads to drastic energy reduction. In addition, the presented voltage scheduling algorithm is ...

  1. Development of a New Cascade Voltage-Doubler for Voltage Multiplication

    OpenAIRE

    Toudeshki, Arash; Mariun, Norman; Hizam, Hashim; Abdul Wahab, Noor Izzri

    2014-01-01

    For more than eight decades, cascade voltage-doubler circuits are used as a method to produce DC output voltage higher than the input voltage. In this paper, the topological developments of cascade voltage-doublers are reviewed. A new circuit configuration for cascade voltage-doubler is presented. This circuit can produce a higher value of the DC output voltage and better output quality compared to the conventional cascade voltage-doubler circuits, with the same number of stages.

  2. Digital Realization of Capacitor-Voltage Feedback Active Damping for LCL-Filtered Grid Converters

    DEFF Research Database (Denmark)

    Xin, Zhen; Wang, Xiongfei; Loh, Poh Chiang

    2015-01-01

    The capacitor voltage of an LCL-filter can also be used for active damping, if it is fed back for synchronization. By this way, an extra current sensor can be avoided. Compared with the existing active damping techniques designed with capacitor current feedback, the capacitor voltage feedback....... To overcome their drawbacks, a new derivative method is then proposed, based on the non-ideal generalized integrator. The performance of the proposed derivative has been found to match the ideal “s” function closely. Active damping based on capacitor voltage feedback can therefore be realized accurately...

  3. Highly Accurate Derivatives for LCL-Filtered Grid Converter with Capacitor Voltage Active Damping

    DEFF Research Database (Denmark)

    Xin, Zhen; Loh, Poh Chiang; Wang, Xiongfei

    2016-01-01

    The middle capacitor voltage of an LCL-filter, if fed back for synchronization, can be used for active damping. An extra sensor for measuring the capacitor current is then avoided. Relating the capacitor voltage to existing popular damping techniques designed with capacitor current feedback would...... are then proposed, based on either second-order or non-ideal generalized integrator. Performances of these derivatives have been found to match the ideal “s” function closely. Active damping based on capacitor voltage feedback can therefore be realized accurately. Experimental results presented have verified...

  4. Cavity Voltage Phase Modulation MD

    CERN Document Server

    Mastoridis, Themistoklis; Molendijk, John; Timko, Helga; CERN. Geneva. ATS Department

    2016-01-01

    The LHC RF/LLRF system is currently configured for extremely stable RF voltage to minimize transient beam loading effects. The present scheme cannot be extended beyond nominal beam current since the demanded power would exceed the peak klystron power and lead to saturation. A new scheme has therefore been proposed: for beam currents above nominal (and possibly earlier), the cavity phase modulation by the beam will not be corrected (transient beam loading), but the strong RF feedback and One-Turn Delay feedback will still be active for loop and beam stability in physics. To achieve this, the voltage set point will be adapted for each bunch. The goal of this MD was to test a new algorithm that would adjust the voltage set point to achieve the cavity phase modulation that would minimize klystron forward power.

  5. Current—voltage characteristics of lead zirconate titanate/nickel bilayered hollow cylindrical magnetoelectric composites

    International Nuclear Information System (INIS)

    De-An, Pan; Shen-Gen, Zhang; Jian-Jun, Tian; Li-Jie, Qiao; Jun-Sai, Sun; Volinsky, Alex A.

    2010-01-01

    Current–voltage measurements obtained from lead zirconate titanate/nickel bilayered hollow cylindrical magnetoelectric composite showed that a sinusoidal current applied to the copper coil wrapped around the hollow cylinder circumference induces voltage across the lead zirconate titanate layer thickness. The current–voltage coefficient and the maximum induced voltage in lead zirconate titanate at 1 kHz and resonance (60.1 kHz) frequencies increased linearly with the number of the coil turns and the applied current. The resonance frequency corresponds to the electromechanical resonance frequency. The current–voltage coefficient can be significantly improved by optimizing the magnetoelectric structure geometry and/or increasing the number of coil turns. Hollow cylindrical lead zirconate titanate/nickel structures can be potentially used as current sensors. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  6. Optimized Controller Design for a 12-Pulse Voltage Source Converter Based HVDC System

    Science.gov (United States)

    Agarwal, Ruchi; Singh, Sanjeev

    2017-12-01

    The paper proposes an optimized controller design scheme for power quality improvement in 12-pulse voltage source converter based high voltage direct current system. The proposed scheme is hybrid combination of golden section search and successive linear search method. The paper aims at reduction of current sensor and optimization of controller. The voltage and current controller parameters are selected for optimization due to its impact on power quality. The proposed algorithm for controller optimizes the objective function which is composed of current harmonic distortion, power factor, and DC voltage ripples. The detailed designs and modeling of the complete system are discussed and its simulation is carried out in MATLAB-Simulink environment. The obtained results are presented to demonstrate the effectiveness of the proposed scheme under different transient conditions such as load perturbation, non-linear load condition, voltage sag condition, and tapped load fault under one phase open condition at both points-of-common coupling.

  7. Design of shielded voltage divider for impulse voltage measurement

    International Nuclear Information System (INIS)

    Kato, Shohei; Kouno, Teruya; Maruyama, Yoshio; Kikuchi, Koji.

    1976-01-01

    The dividers used for the study of the insulation and electric discharge phenomena in high voltage equipments have the problems of the change of response characteristics owing to adjacent bodies and of induced noise. To improve the characteristics, the enclosed type divider shielded with metal has been investigated, and the divider of excellent response has been obtained by adopting the frequency-separating divider system, which is divided into two parts, resistance divider (lower frequency region) and capacitance divider (higher frequency region), for avoiding to degrade the response. Theoretical analysis was carried out in the cases that residual inductance can be neglected or can not be neglected in the small capacitance divider, and that the connecting wires are added. Next, the structure of the divider and the design of the electric field for the divider manufactured on the basis of the theory are described. The response characteristics were measured. The results show that 1 MV impulse voltage can be measured within the response time of 10 ns. Though this divider aims at the impulse voltage, the duration time of which is about that of standard lightning impulse, in view of the heat capacity because of the input resistance of 10.5 kΩ, it is expected that the divider can be applied to the voltage of longer duration time by increasing the input resistance in future. (Wakatsuki, Y.)

  8. Unbalanced Voltage Compensation in Low Voltage Residential AC Grids

    DEFF Research Database (Denmark)

    Trintis, Ionut; Douglass, Philip; Munk-Nielsen, Stig

    2016-01-01

    This paper describes the design and test of a control algorithm for active front-end rectifiers that draw power from a residential AC grid to feed heat pump loads. The control algorithm is able to control the phase to neutral or phase to phase RMS voltages at the point of common coupling...

  9. Vertically stacked nanocellulose tactile sensor.

    Science.gov (United States)

    Jung, Minhyun; Kim, Kyungkwan; Kim, Bumjin; Lee, Kwang-Jae; Kang, Jae-Wook; Jeon, Sanghun

    2017-11-16

    Paper-based electronic devices are attracting considerable attention, because the paper platform has unique attributes such as flexibility and eco-friendliness. Here we report on what is claimed to be the firstly fully integrated vertically-stacked nanocellulose-based tactile sensor, which is capable of simultaneously sensing temperature and pressure. The pressure and temperature sensors are operated using different principles and are stacked vertically, thereby minimizing the interference effect. For the pressure sensor, which utilizes the piezoresistance principle under pressure, the conducting electrode was inkjet printed on the TEMPO-oxidized-nanocellulose patterned with micro-sized pyramids, and the counter electrode was placed on the nanocellulose film. The pressure sensor has a high sensitivity over a wide range (500 Pa-3 kPa) and a high durability of 10 4 loading/unloading cycles. The temperature sensor combines various materials such as poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS), silver nanoparticles (AgNPs) and carbon nanotubes (CNTs) to form a thermocouple on the upper nanocellulose layer. The thermoelectric-based temperature sensors generate a thermoelectric voltage output of 1.7 mV for a temperature difference of 125 K. Our 5 × 5 tactile sensor arrays show a fast response, negligible interference, and durable sensing performance.

  10. The high voltage homopolar generator

    Science.gov (United States)

    Price, J. H.; Gully, J. H.; Driga, M. D.

    1986-11-01

    System and component design features of proposed high voltage homopolar generator (HVHPG) are described. The system is to have an open circuit voltage of 500 V, a peak output current of 500 kA, 3.25 MJ of stored inertial energy and possess an average magnetic-flux density of 5 T. Stator assembly components are discussed, including the stator, mount structure, hydrostatic bearings, main and motoring brushgears and rotor. Planned operational procedures such as monitoring the rotor to full speed and operation with a superconducting field coil are delineated.

  11. Resilient architecture design for voltage variation

    CERN Document Server

    Reddi, Vijay Janapa

    2013-01-01

    Shrinking feature size and diminishing supply voltage are making circuits sensitive to supply voltage fluctuations within the microprocessor, caused by normal workload activity changes. If left unattended, voltage fluctuations can lead to timing violations or even transistor lifetime issues that degrade processor robustness. Mechanisms that learn to tolerate, avoid, and eliminate voltage fluctuations based on program and microarchitectural events can help steer the processor clear of danger, thus enabling tighter voltage margins that improve performance or lower power consumption. We describe

  12. Neural network-based sensor signal accelerator.

    Energy Technology Data Exchange (ETDEWEB)

    Vogt, M. C.

    2000-10-16

    A strategy has been developed to computationally accelerate the response time of a generic electronic sensor. The strategy can be deployed as an algorithm in a control system or as a physical interface (on an embedded microcontroller) between a slower responding external sensor and a higher-speed control system. Optional code implementations are available to adjust algorithm performance when computational capability is limited. In one option, the actual sensor signal can be sampled at the slower rate with adaptive linear neural networks predicting the sensor's future output and interpolating intermediate synthetic output values. In another option, a synchronized collection of predictors sequentially controls the corresponding synthetic output voltage. Error is adaptively corrected in both options. The core strategy has been demonstrated with automotive oxygen sensor data. A prototype interface device is under construction. The response speed increase afforded by this strategy could greatly offset the cost of developing a replacement sensor with a faster physical response time.

  13. Arachidonic acid production by the oleaginous fungus Mortierella alpina 1S-4: A review

    Directory of Open Access Journals (Sweden)

    Hiroshi Kikukawa

    2018-05-01

    Full Text Available The filamentous fungus Mortierella alpina 1S-4 is capable of accumulating a large amount of triacylglycerol containing C20 polyunsaturated fatty acids (PUFAs. Indeed, triacylglycerol production by M. alpina 1S-4 can reach 20 g/L of culture broth, and the critical cellular signaling and structural PUFA arachidonic acid (ARA comprises 30%–70% of the total fatty acid. The demonstrated health benefits of functional PUFAs have in turn encouraged the search for rich sources of these compounds, including fungal strains showing enhanced production of specific PUFAs. Screening for mutants and targeted gene manipulation of M. alpina 1S-4 have elucidated the functions of various enzymes involved in PUFA biosynthesis and established lines with improved PUFA productivity. In some cases, these strains have been used for indistrial-scale production of PUFAs, including ARA. In this review, we described practical ARA production through mutant breeding, functional analyses of genes encoding enzymes involved in PUFA biosynthesis, and recent advances in the production of specific PUFAs through molecular breeding of M. alpina 1S-4. Keywords: Arachidonic acid, Mortierella alpina, Molecular breeding, Fatty acid desaturase

  14. High-Purity Fe3S4 Greigite Microcrystals for Magnetic and Electrochemical Performance

    NARCIS (Netherlands)

    Li, Guowei; Zhang, Baomin; Yu, Feng; Novakova, Alla A.; Krivenkov, Maxim S.; Kiseleva, Tatiana Y.; Chang, Liao; Rao, Jiancun; Polyakov, Alexey O.; Blake, Graeme R.; de Groot, Robert A.; Palstra, Thomas T. M.

    2014-01-01

    High-purity Fe3S4 (greigite) microcrystals with octahedral shape were synthesized via a simple hydrothermal method using a surfactant. The as-prepared samples have the inverse spinel structure with high crystallinity. The saturation magnetization (M-s) reaches 3.74 mu(B) at 5 K and 3.51 mu(B) at

  15. Integrable systems from membranes on AdS4 x S7

    International Nuclear Information System (INIS)

    Bozhilov, P.

    2008-01-01

    We describe how Neumann and Neumann-Rosochatius type integrable systems, as well as the continuous limit of the SU(2) integrable spin chain, can be obtained from membranes on AdS 4 x S 7 background, in the framework of AdS/CFT correspondence. (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  16. Superstrings on AdS4xCP3 from supergravity

    International Nuclear Information System (INIS)

    D'Auria, Riccardo; Trigiante, Mario; Fre, Pietro; Grassi, Pietro Antonio

    2009-01-01

    We derive from a general formulation of pure spinor string theory on type IIA backgrounds the specific form of the action for the AdS 4 xCP 3 background. We provide a complete geometrical characterization of the structure of the superfields involved in the action.

  17. Hydrogen Evolution on Supported Incomplete Cubane-type [Mo3S4](4+) Electrocatalysts

    DEFF Research Database (Denmark)

    Jaramillo, Thomas; Bonde, Jacob Lindner; Zhang, Jingdong

    2008-01-01

    Electrocatalytic properties of biomimetic supported incomplete cubane-type [Mo3S4](4+) clusters are investigated. The activity toward the hydrogen evolution reaction (HER) is evaluated on both a high surface area gas diffusion electrode in a membrane electrode assembly and on highly orientated...

  18. Computational studies of modified [Fe3S4] clusters: Why iron is optimal

    DEFF Research Database (Denmark)

    Kepp, Kasper Planeta

    2008-01-01

    , compared to earlier used standard procedures. The error for average Fe–S bonds decreased from 0.038 Å to 0.016 Å with this procedure. Four density functionals were compared, B3LYP, BP86, TPSS, and TPSSh. B3LYP and to a lesser extent TPSSh energies were inconsistent with experiment for the oxidized [Fe3S4...

  19. Magnetic charges in the AdS(4) superalgebra osp(4 vertical bar 2)

    NARCIS (Netherlands)

    Dibitetto, Giuseppe; Klemm, Dietmar

    2010-01-01

    We discuss the issue of how to include magnetic charges in the AdS(4) superalgebra osp(4 vertical bar 2). It is shown that the usual way of introducing a pseudoscalar central charge on the right hand side of the basic anticommutator does not work, because this breaks SO(2, 3) covariance. We propose

  20. Investigating the role of (2S,4R)-4-hydroxyproline in elastin model peptides

    DEFF Research Database (Denmark)

    Bochicchio, Brigida; Laurita, Alessandro; Heinz, Andrea

    2013-01-01

    Post-translational modifications play a key role in defining the biological functions of proteins. Among them, the hydroxylation of proline producing the (2S,4R)-4-hydroxyproline (Hyp) is one of the most frequent modifications observed in vertebrates, being particularly abundant in the proteins o...

  1. Sensors, Volume 4, Thermal Sensors

    Science.gov (United States)

    Scholz, Jorg; Ricolfi, Teresio

    1996-12-01

    'Sensors' is the first self-contained series to deal with the whole area of sensors. It describes general aspects, technical and physical fundamentals, construction, function, applications and developments of the various types of sensors. This volume describes the construction and applicational aspects of thermal sensors while presenting a rigorous treatment of the underlying physical principles. It provides a unique overview of the various categories of sensors as well as of specific groups, e.g. temperature sensors (resistance thermometers, thermocouples, and radiation thermometers), noise and acoustic thermometers, heat-flow and mass-flow sensors. Specific facettes of applications are presented by specialists from different fields including process control, automotive technology and cryogenics. This volume is an indispensable reference work and text book for both specialists and newcomers, researchers and developers.

  2. Regulation of Na+ channel inactivation by the DIII and DIV voltage-sensing domains.

    Science.gov (United States)

    Hsu, Eric J; Zhu, Wandi; Schubert, Angela R; Voelker, Taylor; Varga, Zoltan; Silva, Jonathan R

    2017-03-06

    Functional eukaryotic voltage-gated Na + (Na V ) channels comprise four domains (DI-DIV), each containing six membrane-spanning segments (S1-S6). Voltage sensing is accomplished by the first four membrane-spanning segments (S1-S4), which together form a voltage-sensing domain (VSD). A critical Na V channel gating process, inactivation, has previously been linked to activation of the VSDs in DIII and DIV. Here, we probe this interaction by using voltage-clamp fluorometry to observe VSD kinetics in the presence of mutations at locations that have been shown to impair Na V channel inactivation. These locations include the DIII-DIV linker, the DIII S4-S5 linker, and the DIV S4-S5 linker. Our results show that, within the 10-ms timeframe of fast inactivation, the DIV-VSD is the primary regulator of inactivation. However, after longer 100-ms pulses, the DIII-DIV linker slows DIII-VSD deactivation, and the rate of DIII deactivation correlates strongly with the rate of recovery from inactivation. Our results imply that, over the course of an action potential, DIV-VSDs regulate the onset of fast inactivation while DIII-VSDs determine its recovery. © 2017 Hsu et al.

  3. Smart paint sensor for monitoring structural vibrations

    International Nuclear Information System (INIS)

    Al-Saffar, Y; Baz, A; Aldraihem, O

    2012-01-01

    A class of smart paint sensors is proposed for monitoring the structural vibration of beams. The sensor is manufactured from an epoxy resin which is mixed with carbon black nano-particles to make it electrically conducting and sensitive to mechanical vibrations. A comprehensive theoretical and experimental investigation is presented to understand the underlying phenomena governing the operation of this class of paint sensors and evaluate its performance characteristics. A theoretical model is presented to model the electromechanical behavior of the sensor system using molecular theory. The model is integrated with an amplifier circuit in order to predict the current and voltage developed by the paint sensor when subjected to loading. Furthermore, the sensor/amplifier circuit models are coupled with a finite element model of a base beam to which the sensor is bonded. The resulting multi-field model is utilized to predict the behavior of both the sensor and the beam when subjected to a wide variety of vibration excitations. The predictions of the multi-field finite element model are validated experimentally and the behavior of the sensor is evaluated both in the time and the frequency domains. The performance of the sensor is compared with the performance of conventional strain gages to emphasize its potential and merits. The presented techniques are currently being extended to sensors that can monitor the vibration and structural power flow of two-dimensional structures. (paper)

  4. Voltage Weak DC Distribution Grids

    NARCIS (Netherlands)

    Hailu, T.G.; Mackay, L.J.; Ramirez Elizondo, L.M.; Ferreira, J.A.

    2017-01-01

    This paper describes the behavior of voltage weak DC distribution systems. These systems have relatively small system capacitance. The size of system capacitance, which stores energy, has a considerable effect on the value of fault currents, control complexity, and system reliability. A number of

  5. Nonlinear electrokinetics at large voltages

    Energy Technology Data Exchange (ETDEWEB)

    Bazant, Martin Z [Department of Chemical Engineering and Institute for Soldier Nanotechnologies, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Sabri Kilic, Mustafa; Ajdari, Armand [Department of Mathematics, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Storey, Brian D [Franklin W Olin College of Engineering, Needham, MA 02492 (United States)], E-mail: bazant@mit.edu

    2009-07-15

    The classical theory of electrokinetic phenomena assumes a dilute solution of point-like ions in chemical equilibrium with a surface whose double-layer voltage is of order the thermal voltage, k{sub B}T/e=25 mV. In nonlinear 'induced-charge' electrokinetic phenomena, such as ac electro-osmosis, several volts {approx}100k{sub B}T/e are applied to the double layer, and the theory breaks down and cannot explain many observed features. We argue that, under such a large voltage, counterions 'condense' near the surface, even for dilute bulk solutions. Based on simple models, we predict that the double-layer capacitance decreases and the electro-osmotic mobility saturates at large voltages, due to steric repulsion and increased viscosity of the condensed layer, respectively. The former suffices to explain observed high-frequency flow reversal in ac electro-osmosis; the latter leads to a salt concentration dependence of induced-charge flows comparable to experiments, although a complete theory is still lacking.

  6. High voltage power network construction

    CERN Document Server

    Harker, Keith

    2018-01-01

    This book examines the key requirements, considerations, complexities and constraints relevant to the task of high voltage power network construction, from design, finance, contracts and project management to installation and commissioning, with the aim of providing an overview of the holistic end to end construction task in a single volume.

  7. Voltage control of ferromagnetic resonance

    Directory of Open Access Journals (Sweden)

    Ziyao Zhou

    2016-06-01

    Full Text Available Voltage control of magnetism in multiferroics, where the ferromagnetism and ferroelectricity are simultaneously exhibiting, is of great importance to achieve compact, fast and energy efficient voltage controllable magnetic/microwave devices. Particularly, these devices are widely used in radar, aircraft, cell phones and satellites, where volume, response time and energy consumption is critical. Researchers realized electric field tuning of magnetic properties like magnetization, magnetic anisotropy and permeability in varied multiferroic heterostructures such as bulk, thin films and nanostructure by different magnetoelectric (ME coupling mechanism: strain/stress, interfacial charge, spin–electromagnetic (EM coupling and exchange coupling, etc. In this review, we focus on voltage control of ferromagnetic resonance (FMR in multiferroics. ME coupling-induced FMR change is critical in microwave devices, where the electric field tuning of magnetic effective anisotropic field determines the tunability of the performance of microwave devices. Experimentally, FMR measurement technique is also an important method to determine the small effective magnetic field change in small amount of magnetic material precisely due to its high sensitivity and to reveal the deep science of multiferroics, especially, voltage control of magnetism in novel mechanisms like interfacial charge, spin–EM coupling and exchange coupling.

  8. High voltage MOSFET switching circuit

    Science.gov (United States)

    McEwan, Thomas E.

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  9. Reconfiguration of sustainable thermoelectric generation using wireless sensor network

    DEFF Research Database (Denmark)

    Chen, Min

    2014-01-01

    wireless sensor networks (WSNs), where remotely deployed temperature and voltage sensors as well as latching relays can be organized as a whole to intelligently identify and execute the optimal interconnection of TEM strings. A reconfigurable TEM array with a WSN controller and a maximum power point...

  10. Magnetostrictive-piezoelectric magnetic sensor with current excitation

    International Nuclear Information System (INIS)

    Prieto, J.L.; Aroca, C.; Lopez, E.; Sanchez, M.C.; Sanchez, P.

    2000-01-01

    A new working configuration for magnetostrictive-piezoelectric magnetic sensors is presented. In this configuration, the excitation is caused using an electrical current flowing through the ferromagnetic sample and the induced signal is sensed in the piezoelectric support as an electrical voltage. This new idea allows a magnetic field detection without any coil and opens a possibility for a future miniaturisation of the sensor

  11. Fabrication and characterization of nanostructured Fe3S4, an isostructural compound of half-metallic Fe3O4

    KAUST Repository

    Li, Peng; Xia, Chuan; Zhang, Qiang; Guo, Zaibing; Cui, Wenyao; Bai, Haili; Alshareef, Husam N.; Zhang, Xixiang

    2015-01-01

    High-purity, well-crystallized spinel Fe3S4 nanoplatelets were synthesized by the hydrothermal method, and the saturation magnetic moment of Fe3S4 was measured at 1.83 μB/f.u. The temperature-dependent resistivity of Fe3S4 was metallic

  12. Gas Sensor

    KAUST Repository

    Luebke, Ryan

    2015-01-22

    A gas sensor using a metal organic framework material can be fully integrated with related circuitry on a single substrate. In an on-chip application, the gas sensor can result in an area-efficient fully integrated gas sensor solution. In one aspect, a gas sensor can include a first gas sensing region including a first pair of electrodes, and a first gas sensitive material proximate to the first pair of electrodes, wherein the first gas sensitive material includes a first metal organic framework material.

  13. Gas Sensor

    KAUST Repository

    Luebke, Ryan; Eddaoudi, Mohamed; Omran, Hesham; Belmabkhout, Youssef; Shekhah, Osama; Salama, Khaled N.

    2015-01-01

    A gas sensor using a metal organic framework material can be fully integrated with related circuitry on a single substrate. In an on-chip application, the gas sensor can result in an area-efficient fully integrated gas sensor solution. In one aspect, a gas sensor can include a first gas sensing region including a first pair of electrodes, and a first gas sensitive material proximate to the first pair of electrodes, wherein the first gas sensitive material includes a first metal organic framework material.

  14. Sensor web

    Science.gov (United States)

    Delin, Kevin A. (Inventor); Jackson, Shannon P. (Inventor)

    2011-01-01

    A Sensor Web formed of a number of different sensor pods. Each of the sensor pods include a clock which is synchronized with a master clock so that all of the sensor pods in the Web have a synchronized clock. The synchronization is carried out by first using a coarse synchronization which takes less power, and subsequently carrying out a fine synchronization to make a fine sync of all the pods on the Web. After the synchronization, the pods ping their neighbors to determine which pods are listening and responded, and then only listen during time slots corresponding to those pods which respond.

  15. Toward developing long-life water quality sensors for the ISS using planar REDOX and conductivity sensors

    Science.gov (United States)

    Buehler, M. G.; Kuhlman, G. M.; Keymeulen, D.; Myung, N.; Kounaves, S. P.

    2003-01-01

    REDOX and conductivity sensors are metal electrodes that are used to detect ionic species in solution by measuring the electrochemical cell current as the voltage is scanned. This paper describes the construction of the sensors, the potentiostat electronics, the measurement methodology, and applications to water quality measurements.

  16. Improving Efficiency of Evaporated Cu2ZnSnS4 Thin Film Solar Cells by a Thin Ag Intermediate Layer between Absorber and Back Contact

    Directory of Open Access Journals (Sweden)

    Hongtao Cui

    2015-01-01

    Full Text Available A 20 nm Ag coating on Mo back contact was adopted to improve the back contact of evaporated Cu2ZnSnS4 (CZTS solar cells. The Ag layer helped reduce the thickness of MoS2 which improves fill factor (FF significantly; additionally, it reduced secondary phases ZnS and SnS2−x, which may help carrier transport; it was also involved in the doping of the absorber layer, which compensated the intrinsic p-type doping and therefore drags down the doping level. The doping involvement may enlarge the depletion region and improve lifetime of the absorber, which led to enhancing open circuit voltage (VOC, short circuit current density (JSC, and efficiency significantly. However, it degrades the crystallinity of the material slightly.

  17. Thermosensitive gas flow sensor

    International Nuclear Information System (INIS)

    Berlicki, T.; Osadnik, S.; Prociow, E.

    1997-01-01

    Results of investigations on thermal gas flow sensor have been presented. The sensor consists of three thin film resistors Si+Ta. The circuit was designed in the form of two bridges; one of them serves for measurement of the heater temperature, the second one for the measurement of temperature difference of peripheral resistors. The measurement of output voltage versus the rate of nitrogen flow at various power levels dissipated at the heater and various temperatures have been made. The measurements were carried out in three versions; (a) at constant temperature of the heater, (b) at constant power dissipated in the heater, controlled by the power of the heater, (c) at constant temperature of the heater controlled by the power dissipated in the peripheral resistors of the sensor. Due to measurement range it is advantageous to stabilize the temperature of the heater, especially by means of the power supplied to the peripheral resistors. In this case the wider measurement range can be obtained. (author)

  18. Acoustic anisotropy of acoustooptic TI(3)AsS(4) crystals.

    Science.gov (United States)

    Martynyuk-Lototska, Iryna; Kushnirevych, Marian; Zapeka, Bohdan; Krupych, Oleh; Kokhan, Oleksandr; Pogodin, Artem; Peresh, Eugen; Mys, Oksana; Vlokh, Rostyslav

    2015-02-20

    We present comprehensive experimental measurements and analysis of anisotropy of the acoustic wave velocities for TI(3)AsS(4) crystals, including the obliquity and nonorthogonality of the acoustic waves, and the deviations from purely longitudinal and transverse polarization types. We have found that the crystals under analysis are characterized by rather low transverse wave velocities v(23) and v(32), which are both equal to 630 m/s. It is shown that the efficiency of acoustooptic (AO) interactions in TI(3)AsS(4) can be notably increased when providing anisotropic interaction with the slowest transverse acoustic wave. Under the previously mentioned conditions, the AO figure-of-merit can be estimated to be extremely high, i.e., approximately 3×10(-12) s(3)/kg.

  19. Spectroscopic ellipsometry study of Cu2ZnSnS4 bulk poly-crystals

    Science.gov (United States)

    Levcenko, S.; Hajdeu-Chicarosh, E.; Garcia-Llamas, E.; Caballero, R.; Serna, R.; Bodnar, I. V.; Victorov, I. A.; Guc, M.; Merino, J. M.; Pérez-Rodriguez, A.; Arushanov, E.; León, M.

    2018-04-01

    The linear optical properties of Cu2ZnSnS4 bulk poly-crystals have been investigated using spectroscopic ellipsometry in the range of 1.2-4.6 eV at room temperature. The characteristic features identified in the optical spectra are explained by using the Adachi analytical model for the interband transitions at the corresponding critical points in the Brillouin zone. The experimental data have been modeled over the entire spectral range taking into account the lowest E0 transition near the fundamental absorption edge and E1A and E1B higher energy interband transitions. In addition, the spectral dependences of the refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity values have been accurately determined and are provided since they are essential data for the design of Cu2ZnSnS4 based optoelectronic devices.

  20. Supersymmetric black holes in AdS4 from very special geometry

    International Nuclear Information System (INIS)

    Gnecchi, Alessandra; Halmagyi, Nick

    2014-01-01

    Supersymmetric black holes in AdS spacetime are inherently interesting for the AdS/CFT correspondence. Within a four dimensional gauged supergravity theory coupled to vector multiplets, the only analytic solutions for regular, supersymmetric, static black holes in AdS 4 are those in the STU-model due to Cacciatori and Klemm. We study a class of U(1)-gauged supergravity theories coupled to vector multiplets which have a cubic prepotential, the scalar manifold is then a very special Kähler manifold. When the resulting very special Kähler manifold is a homogeneous space, we find analytic solutions for static, supersymmetric AdS 4 black holes with vanishing axions. The horizon geometries of our solutions are constant curvature Riemann surfaces of arbitrary genus

  1. Caution Is Required in Interpretation of Mutations in the Voltage Sensing Domain of Voltage Gated Channels as Evidence for Gating Mechanisms

    Directory of Open Access Journals (Sweden)

    Alisher M. Kariev

    2015-01-01

    Full Text Available The gating mechanism of voltage sensitive ion channels is generally considered to be the motion of the S4 transmembrane segment of the voltage sensing domains (VSD. The primary supporting evidence came from R→C mutations on the S4 transmembrane segment of the VSD, followed by reaction with a methanethiosulfonate (MTS reagent. The cys side chain is –SH (reactive form –S−; the arginine side chain is much larger, leaving space big enough to accommodate the MTS sulfonate head group. The cavity created by the mutation has space for up to seven more water molecules than were present in wild type, which could be displaced irreversibly by the MTS reagent. Our quantum calculations show there is major reorientation of three aromatic residues that face into the cavity in response to proton displacement within the VSD. Two phenylalanines reorient sufficiently to shield/unshield the cysteine from the intracellular and extracellular ends, depending on the proton positions, and a tyrosine forms a hydrogen bond to the cysteine sulfur with its side chain –OH. These could produce the results of the experiments that have been interpreted as evidence for physical motion of the S4 segment, without physical motion of the S4 backbone. The computations strongly suggest that the interpretation of cysteine substitution reaction experiments be re-examined in the light of these considerations.

  2. New antiferromagnetic semiconductor CuCr1.5Sb0.5S4

    International Nuclear Information System (INIS)

    Kesler, Ya.A.; Koroleva, L.I.; Mikheev, M.G.; Odintsov, A.G.; Filimonov, D.S.

    1993-01-01

    New halcogenide compound with spinel-antiferromagnetic semiconductor CuCr 1.5 Sb 0.5 S 4 are obtained and studied for the first time. Magnetic properties of this compound, namely, magnetization linear dependence, maximum on PHI(T) curve in the low-temperature area and realization of the Curie-Weis law for paramagnetic susceptibility with negative paramagnetic temperature testiby to the fact that this compound is antiferromagnetic

  3. Copper interactions in TlCu7S4 and TlCu7Se4

    International Nuclear Information System (INIS)

    Noren, L.; Delaplane, R.G.; Berger, R.

    1999-01-01

    Complete text of publication follows. The copper chalcogenides ACu 7 S 4 (A=NH 4 + , Tl + , Rb + ) are quasi-one-dimensional metals at ambient and higher temperatures which is due to the high mobility of copper in these structures. TlCu 7 S 4 and TlCu 7 Se 4 are isostructural compounds, space group I4/m, which can be described on the basis of a TlX 8 cube with two different Cu sites, Cu(1) and Cu(2). Cu(2)-Cu(2) zigzag chains run along the c axis with only 3/4 occupation of the Cu(2) sites. However, these two compounds differ in behaviour on cooling. The sulphide shows a polymorphic first-order transition to the CsAg 7 S 4 type (P4/n) owing to ordering of the vacancies in the Cu(2)-Cu(2) chains. In order to study the nature of the Cu(2) order/disorder in the two title compounds, a series of neutron diffraction measurements (both Bragg and diffuse scattering) were made at several temperatures from 40 to 713 K on the instrument SLAD at Studsvik. The structure at each temperature was modelled using RMC techniques. The resulting configuration show that as the temperature increases, there is a marked increase in the mobility of the Cu atoms in the Cu(2)-Cu(2) chains for TlCu 7 S 4 but not for TlCu 7 Se 4 . This is due to the initial difference in the Cu(2)-Cu(2) distances, only 2.2A for the thiocuprate, but 2.7A in the selenocuprate which explains the relative ease for Cu(2) ordering in the latter case. (author)

  4. Exact microstate counting for dyonic black holes in AdS4

    Science.gov (United States)

    Benini, Francesco; Hristov, Kiril; Zaffaroni, Alberto

    2017-08-01

    We present a counting of microstates of a class of dyonic BPS black holes in AdS4 which precisely reproduces their Bekenstein-Hawking entropy. The counting is performed in the dual boundary description, that provides a non-perturbative definition of quantum gravity, in terms of a twisted and mass-deformed ABJM theory. We evaluate its twisted index and propose an extremization principle to extract the entropy, which reproduces the attractor mechanism in gauged supergravity.

  5. Exact microstate counting for dyonic black holes in AdS4

    Directory of Open Access Journals (Sweden)

    Francesco Benini

    2017-08-01

    Full Text Available We present a counting of microstates of a class of dyonic BPS black holes in AdS4 which precisely reproduces their Bekenstein–Hawking entropy. The counting is performed in the dual boundary description, that provides a non-perturbative definition of quantum gravity, in terms of a twisted and mass-deformed ABJM theory. We evaluate its twisted index and propose an extremization principle to extract the entropy, which reproduces the attractor mechanism in gauged supergravity.

  6. 211At-Rh(16-S4-diol) complex as a precursor for astatine radiopharmaceuticals

    International Nuclear Information System (INIS)

    Pruszynski, M.; Bilewicz, A.

    2006-01-01

    211 At is one of the most promising radionuclides in α-radioimmunotherapy (α-RIT). Unfortunately, biomolecules labeled by direct electrophilic astatination are unstable due to the rapid loss of 211 At under both in vitro and in vivo conditions. The present paper describes the results of our studies on attaching At - to the rhodium(III) complex with thioether ligand: 1,5,9,13-etrathiacyclohexadecane-3,11-diol (16-S4-diol). Rh 3+ was chosen as a moderately soft metal cation which should form very strong bonds with soft At - anions, but first of all because of the kinetic inertness of low spin rhodium(III) d 6 complexes. The 16-S4-diol ligand was selected due to formation of stable complexes with Rh 3+ . The experiments related to optimization of the reaction conditions were performed with the 131 I, basing on a chemical similarity of I - to At - . The experiments with 211 At were then carried out under the conditions found optimal for I - . The preliminary results are promising, and indicate a possibility for astatination of biomolecules by using the 211 At-Rh(16-S4-diol) complex

  7. Optical diagnostics of lead and PbGa2S4 layered crystal laser plasmas

    International Nuclear Information System (INIS)

    Shuaibov, A.K.; Dashchenko, A.I.; Shevera, I.V.

    2001-01-01

    Laser plasmas produced at the surfaces of lead and a PbGa 2 S 4 layered crystal irradiated by a neodymium laser with λ = 1.06 μm, pulse duration τ = 20 ns, and intensity W = (1-2) x 10 9 W/cm 2 are studied using optical diagnostics. It is shown that, in a lead plasma, the most intense (characteristic) lines are the PbI 405.7-nm, PbI 368.3-nm, PbI 364-nm, and PbII 220.4-nm lines. In a layered crystal plasma, the emission spectrum is an aggregation of the most intense PbI and GaI lines, whereas sulfur lines are absent. The bottlenecks of the recombination of the ionic and atomic components of the lead and PbGa 2 S 4 crystal plasmas are determined. The average propagation velocity of the lead laser plume is 18-20 km/s. A comparative analysis of the emission dynamics of PbI and GaI lines in the laser plasmas of these metals and in the plasma of a PbGa 2 S 4 crystal is carried out. The results obtained are important for the optical diagnostics of the plasmas of lead- and gallium-containing crystals and for the optimization of laser deposition of the thin films of these substances

  8. Unraveling the electrolyte properties of Na3SbS4 through computation and experiment

    Science.gov (United States)

    Rush, Larry E.; Hood, Zachary D.; Holzwarth, N. A. W.

    2017-12-01

    Solid-state sodium electrolytes are expected to improve next-generation batteries on the basis of favorable energy density and reduced cost. Na3SbS4 represents a new solid-state ion conductor with high ionic conductivities in the mS/cm range. Here, we explore the tetragonal phase of Na3SbS4 and its interface with metallic sodium anode using a combination of experiments and first-principles calculations. The computed Na-ion vacancy migration energies of 0.1 eV are smaller than the value inferred from experiment, suggesting that grain boundaries or other factors dominate the experimental systems. Analysis of symmetric cells of the electrolyte—Na/Na 3SbS4/Na —show that a conductive solid electrolyte interphase forms. Computer simulations infer that the interface is likely to be related to Na3SbS3 , involving the conversion of the tetrahedral SbS43 - ions of the bulk electrolyte into trigonal pyramidal SbS33 - ions at the interface.

  9. Deviation from bimaximal mixing and leptonic CP phases in S4 family symmetry and generalized CP

    International Nuclear Information System (INIS)

    Li, Cai-Chang; Ding, Gui-Jun

    2015-01-01

    The lepton flavor mixing matrix having one row or one column in common with the bimaximal mixing up to permutations is still compatible with the present neutrino oscillation data. We provide a thorough exploration of generating such a mixing matrix from S 4 family symmetry and generalized CP symmetry H CP . Supposing that S 4 ⋊H CP is broken down to Z 2 ST 2 SU ×H CP ν in the neutrino sector and Z 4 TST 2 U ⋊H CP l in the charged lepton sector, one column of the PMNS matrix would be of the form (1/2,1/√2,1/2) T up to permutations, both Dirac CP phase and Majorana CP phases are trivial to accommodate the observed lepton mixing angles. The phenomenological implications of the remnant symmetry K 4 (TST 2 ,T 2 U) ×H CP ν in the neutrino sector and Z 2 SU ×H CP l in the charged lepton sector are studied. One row of PMNS matrix is determined to be (1/2,1/2,−i/√2), and all the three leptonic CP phases can only be trivial to fit the measured values of the mixing angles. Two models based on S 4 family symmetry and generalized CP are constructed to implement these model independent predictions enforced by remnant symmetry. The correct mass hierarchy among the charged leptons is achieved. The vacuum alignment and higher order corrections are discussed.

  10. A VDF/TrFE copolymer on silicon pyroelectric sensor: design considerations and experiments

    NARCIS (Netherlands)

    Setiadi, D.; Setiadi, D.; Regtien, Paulus P.L.

    1995-01-01

    For an optimal design of a VDF/TrFE (vinylidene fluoride trifluoroethylene) copolymer-on-silicon pyroelectric sensor, the one-dimensional diffusion equation is solved for the pyroelectric multilayer structure. Output current and voltage of the sensor are calculated. Improvement of the sensor can be

  11. PI and Fuzzy Control Strategies for High Voltage Output DC-DC Boost Power Converter - Hardware Implementation and Analysis

    DEFF Research Database (Denmark)

    Padmanaban, Sanjeevi Kumar; Blaabjerg, Frede; Siano, Pierluigi

    2016-01-01

    This paper presents the control strategies by Proportional-Integral (P-I) and Fuzzy Logic (FL) for a DC-DC boost power converter for high output voltage configuration. Standard DC-DC converters are traditionally used for high voltage direct current (HVDC) power transmission systems. But, lack its...... converter with inbuilt voltage-lift technique and overcome the aforementioned deficiencies. Further, the control strategy is adapted based on proportional-integral (P-I) and fuzzy logic, closed-loop controller to regulate the outputs and ensure the performances. Complete hardware prototype of EHV converter...... performances in terms of efficiency, reduced transfer gain and increased cost with sensor units. Moreover, the internal self-parasitic components reduce the output voltage and efficiency of classical high voltage converters (HVC). This investigation focused on extra high-voltage (EHV) DC-DC boost power...

  12. Chemical sensors

    International Nuclear Information System (INIS)

    Hubbard, C.W.; Gordon, R.L.

    1987-05-01

    The revolution in analytical chemistry promised by recent developments in the field of chemical sensors has potential for significant positive impact on both research and production activities conducted by and for the Department of Energy. Analyses which were, in the past, performed only with a roomful of expensive equipment can now be performed with miniature solid-state electronic devices or small optical probes. Progress in the development of chemical sensors has been rapid, and the field is currently growing at a great rate. In accordance, Pacific Northwest Laboratory initiated a survey of recent literature so that contributors to active programs in research on analytical methods could be made aware of principles and applications of this new technology. This report presents the results of that survey. The sensors discussed here are divided into three types: micro solid-state devices, optical sensors, and piezoelectric crystal devices. The report is divided into three corresponding sections. The first section, ''Micro Solid-State Devices,'' discusses the design, operation, and application of electronic sensors that are produced in much the same way as standard solid-state electronic devices. The second section, ''Optrodes,'' covers the design and operation of chemical sensors that use fiber optics to detect chemically induced changes in optical properties. The final section, ''Piezoelectric Crystal Detectors,'' discusses two types of chemical sensors that depend on the changes in the properties of an oscillating piezoelectric crystal to detect the presence of certain materials. Advantages and disadvantages of each type of sensor are summarized in each section

  13. Functional characterization of Kv11.1 (hERG) potassium channels split in the voltage-sensing domain.

    Science.gov (United States)

    de la Peña, Pilar; Domínguez, Pedro; Barros, Francisco

    2018-03-23

    Voltage-dependent KCNH family potassium channel functionality can be reconstructed using non-covalently linked voltage-sensing domain (VSD) and pore modules (split channels). However, the necessity of a covalent continuity for channel function has not been evaluated at other points within the two functionally independent channel modules. We find here that by cutting Kv11.1 (hERG, KCNH2) channels at the different loops linking the transmembrane spans of the channel core, not only channels split at the S4-S5 linker level, but also those split at the intracellular S2-S3 and the extracellular S3-S4 loops, yield fully functional channel proteins. Our data indicate that albeit less markedly, channels split after residue 482 in the S2-S3 linker resemble the uncoupled gating phenotype of those split at the C-terminal end of the VSD S4 transmembrane segment. Channels split after residues 514 and 518 in the S3-S4 linker show gating characteristics similar to those of the continuous wild-type channel. However, breaking the covalent link at this level strongly accelerates the voltage-dependent accessibility of a membrane impermeable methanethiosulfonate reagent to an engineered cysteine at the N-terminal region of the S4 transmembrane helix. Thus, besides that of the S4-S5 linker, structural integrity of the intracellular S2-S3 linker seems to constitute an important factor for proper transduction of VSD rearrangements to opening and closing the cytoplasmic gate. Furthermore, our data suggest that the short and probably rigid characteristics of the extracellular S3-S4 linker are not an essential component of the Kv11.1 voltage sensing machinery.

  14. Electronic, Magnetic, and Redox Properties of [MFe(3)S(4)] Clusters (M = Cd, Cu, Cr) in Pyrococcus furiosus Ferredoxin.

    Science.gov (United States)

    Staples, Christopher R.; Dhawan, Ish K.; Finnegan, Michael G.; Dwinell, Derek A.; Zhou, Zhi Hao; Huang, Heshu; Verhagen, Marc F. J. M.; Adams, Michael W. W.; Johnson, Michael K.

    1997-12-03

    The ground- and excited-state properties of heterometallic [CuFe(3)S(4)](2+,+), [CdFe(3)S(4)](2+,+), and [CrFe(3)S(4)](2+,+) cubane clusters assembled in Pyrococcus furiosus ferredoxin have been investigated by the combination of EPR and variable-temperature/variable-field magnetic circular dichroism (MCD) studies. The results indicate Cd(2+) incorporation into [Fe(3)S(4)](0,-) cluster fragments to yield S = 2 [CdFe(3)S(4)](2+) and S = (5)/(2) [CdFe(3)S(4)](+) clusters and Cu(+) incorporation into [Fe(3)S(4)](+,0) cluster fragments to yield S = (1)/(2) [CuFe(3)S(4)](2+) and S = 2 [CuFe(3)S(4)](+) clusters. This is the first report of the preparation of cubane type [CrFe(3)S(4)](2+,+) clusters, and the combination of EPR and MCD results indicates S = 0 and S = (3)/(2) ground states for the oxidized and reduced forms, respectively. Midpoint potentials for the [CdFe(3)S(4)](2+,+), [CrFe(3)S(4)](2+,+), and [CuFe(3)S(4)](2+,+) couples, E(m) = -470 +/- 15, -440 +/- 10, and +190 +/- 10 mV (vs NHE), respectively, were determined by EPR-monitored redox titrations or direct electrochemistry at a glassy carbon electrode. The trends in redox potential, ground-state spin, and electron delocalization of [MFe(3)S(4)](2+,+) clusters in P. furiosus ferredoxin are discussed as a function of heterometal (M = Cr, Mn, Fe, Co, Ni, Cu, Zn, Cd, and Tl).

  15. A sensorless control method for capacitor voltage balance and circulating current suppression of modular multilevel converter

    DEFF Research Database (Denmark)

    Liu, Hui; Ma, Ke; Loh, Poh Chiang

    2015-01-01

    There are several problems in the Modular Multilevel Converter (MMC), such as the appearance of circulating current, capacitor voltage unbalance and the requirement for a high number of sensors. All these problems will decrease the reliability and raise the cost/uncertainty of using MMC solutions....... As a result, a sensorless control method is proposed in this paper, which targets to improve the performances of MMC in respect to the above mentioned disadvantages: To decrease the cost and simplify the physical implementation, a state observer is proposed and designed to estimate both the capacitor voltages...... and the circulating currents in order to replace the high numbers of sensors. Furthermore, a control method combining the circulating current suppression and the capacitor voltage balancing is conducted based on the proposed state observer. It is concluded that the proposed state observer and control method can...

  16. Analyzing randomly occurring voltage breakdowns

    International Nuclear Information System (INIS)

    Wiltshire, C.W.

    1977-01-01

    During acceptance testing of high-vacuum neutron tubes, 40% of the tubes failed after experiencing high-voltage breakdowns during the aging process. Use of a digitizer in place of an oscilloscope revealed two types of breakdowns, only one of which affected acceptance testing. This information allowed redesign of the aging sequence to prevent tube damage and improve yield and quality of the final product

  17. Advances in high voltage engineering

    CERN Document Server

    Haddad, A

    2005-01-01

    This book addresses the very latest research and development issues in high voltage technology and is intended as a reference source for researchers and students in the field, specifically covering developments throughout the past decade. This unique blend of expert authors and comprehensive subject coverage means that this book is ideally suited as a reference source for engineers and academics in the field for years to come.

  18. Seasonal Drought Forecasting for Latin America Using the ECMWF S4 Forecast System

    Directory of Open Access Journals (Sweden)

    Hugo Carrão

    2018-06-01

    Full Text Available Meaningful seasonal prediction of drought conditions is key information for end-users and water managers, particularly in Latin America where crop and livestock production are key for many regional economies. However, there are still not many studies of the feasibility of such a forecasts at continental level in the region. In this study, precipitation predictions from the European Centre for Medium Range Weather (ECMWF seasonal forecast system S4 are combined with observed precipitation data to generate forecasts of the standardized precipitation index (SPI for Latin America, and their skill is evaluated over the hindcast period 1981–2010. The value-added utility in using the ensemble S4 forecast to predict the SPI is identified by comparing the skill of its forecasts with a baseline skill based solely on their climatological characteristics. As expected, skill of the S4-generated SPI forecasts depends on the season, location, and the specific aggregation period considered (the 3- and 6-month SPI were evaluated. Added skill from the S4 for lead times equaling the SPI accumulation periods is primarily present in regions with high intra-annual precipitation variability, and is found mostly for the months at the end of the dry seasons for 3-month SPI, and half-yearly periods for 6-month SPI. The ECMWF forecast system behaves better than the climatology for clustered grid points in the North of South America, the Northeast of Argentina, Uruguay, southern Brazil and Mexico. The skillful regions are similar for the SPI3 and -6, but become reduced in extent for the severest SPI categories. Forecasting different magnitudes of meteorological drought intensity on a seasonal time scale still remains a challenge. However, the ECMWF S4 forecasting system does capture the occurrence of drought events for the aforementioned regions and seasons reasonably well. In the near term, the largest advances in the prediction of meteorological drought for Latin

  19. Low voltage electron beam accelerators

    International Nuclear Information System (INIS)

    Ochi, Masafumi

    2003-01-01

    Widely used electron accelerators in industries are the electron beams with acceleration voltage at 300 kV or less. The typical examples are shown on manufactures in Japan, equipment configuration, operation, determination of process parameters, and basic maintenance requirement of the electron beam processors. New electron beam processors with acceleration voltage around 100 kV were introduced maintaining the relatively high dose speed capability of around 10,000 kGy x mpm at production by ESI (Energy Science Inc. USA, Iwasaki Electric Group). The application field like printing and coating for packaging requires treating thickness of 30 micron or less. It does not require high voltage over 110 kV. Also recently developed is a miniature bulb type electron beam tube with energy less than 60 kV. The new application area for this new electron beam tube is being searched. The drive force of this technology to spread in the industries would be further development of new application, process and market as well as the price reduction of the equipment, upon which further acknowledgement and acceptance of the technology to societies and industries would entirely depend. (Y. Tanaka)

  20. Low voltage electron beam accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Ochi, Masafumi [Iwasaki Electric Co., Ltd., Tokyo (Japan)

    2003-02-01

    Widely used electron accelerators in industries are the electron beams with acceleration voltage at 300 kV or less. The typical examples are shown on manufactures in Japan, equipment configuration, operation, determination of process parameters, and basic maintenance requirement of the electron beam processors. New electron beam processors with acceleration voltage around 100 kV were introduced maintaining the relatively high dose speed capability of around 10,000 kGy x mpm at production by ESI (Energy Science Inc. USA, Iwasaki Electric Group). The application field like printing and coating for packaging requires treating thickness of 30 micron or less. It does not require high voltage over 110 kV. Also recently developed is a miniature bulb type electron beam tube with energy less than 60 kV. The new application area for this new electron beam tube is being searched. The drive force of this technology to spread in the industries would be further development of new application, process and market as well as the price reduction of the equipment, upon which further acknowledgement and acceptance of the technology to societies and industries would entirely depend. (Y. Tanaka)

  1. Light-voltage conversion apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Fujioka, Yoshiki

    1987-09-19

    In a light-voltage conversion unit, when input signal is applied, the output signal to the control circuit has quick rise-up time and slow breaking time. In order to improve this, a short-circuit transistor is placed at the diode, and this transistor is forced ON, when an output signal to the control circuit is lowered down to a constant voltage, to short-circuit between the output terminals. This, however, has a demerit of high power consumption by a transistor. In this invention, by connecting a light-emitting element which gets ON at the first transition and a light-emitting element which gets ON at the last transition, placing a light receiving element in front of each light-emitting element, when an input signal is applied; thus a load is driven only with ON signal of each light-emitting element, eliminating the delay in the last transition. All of these give a quick responsive light-voltage conversion without unnecessary power consumption. (5 figs)

  2. [Development of residual voltage testing equipment].

    Science.gov (United States)

    Zeng, Xiaohui; Wu, Mingjun; Cao, Li; He, Jinyi; Deng, Zhensheng

    2014-07-01

    For the existing measurement methods of residual voltage which can't turn the power off at peak voltage exactly and simultaneously display waveforms, a new residual voltage detection method is put forward in this paper. First, the zero point of the power supply is detected with zero cross detection circuit and is inputted to a single-chip microcomputer in the form of pulse signal. Secend, when the zero point delays to the peak voltage, the single-chip microcomputer sends control signal to power off the relay. At last, the waveform of the residual voltage is displayed on a principal computer or oscilloscope. The experimental results show that the device designed in this paper can turn the power off at peak voltage and is able to accurately display the voltage waveform immediately after power off and the standard deviation of the residual voltage is less than 0.2 V at exactly one second and later.

  3. Temperature-dependent electrical characteristics and carrier transport mechanism of p-Cu2ZnSnS4/n-GaN heterojunctions

    Science.gov (United States)

    Niteesh Reddy, Varra; Reddy, M. Siva Pratap; Gunasekhar, K. R.; Lee, Jung-Hee

    2018-04-01

    This work explores the temperature-dependent electrical characteristics and carrier transport mechanism of Au/p-Cu2ZnSnS4/n-type GaN heterojunction (HJ) diodes with a CZTS interlayer. The electrical characteristics were examined by current-voltage-temperature, turn-on voltage-temperature and series resistance-temperature in the high-temperature range of 300-420 K. It is observed that an exponential decrease in the series resistance ( R S) and increase in the ideality factor ( n) and barrier height ( ϕ b) with increase in temperature. The thermal coefficient ( K j) is determined to be - 1.3 mV K-1 at ≥ 300 K. The effective ϕ b is determined to be 1.21 eV. This obtained barrier height is consistent with the theoretical one. The characteristic temperature ( T 0) resulting from the Cheung's functions [d V/d(ln I) vs. I and H( I) vs. I], is seen that there is good agreement between the T 0 values from both Cheung's functions. The relevant carrier transport mechanisms of Au/p-CZTS/n-type GaN HJ are explained based on the thermally decreased energy band gap of n-type GaN layers, thermally activated deep donors and increased further activated shallow donors.

  4. Ultra Low-Voltage Energy Harvesting

    Science.gov (United States)

    2013-09-01

    if in a solar battery charger the level of illumination were to drop due to cloud cover, the diode would prevent discharging of the battery when...the source voltage becomes lower than battery voltage. The drawback of a simple circuit like this is that once the source voltage is lower than the...longer charged when the battery voltage is above the OV setting. Figure 13. Block diagram of BQ25504 circuit . (From [10]) 18 THIS PAGE

  5. A micro-fabricated force sensor using an all thin film piezoelectric active sensor.

    Science.gov (United States)

    Lee, Junwoo; Choi, Wook; Yoo, Yong Kyoung; Hwang, Kyo Seon; Lee, Sang-Myung; Kang, Sungchul; Kim, Jinseok; Lee, Jeong Hoon

    2014-11-25

    The ability to measure pressure and force is essential in biomedical applications such as minimally invasive surgery (MIS) and palpation for detecting cancer cysts. Here, we report a force sensor for measuring a shear and normal force by combining an arrayed piezoelectric sensors layer with a precut glass top plate connected by four stress concentrating legs. We designed and fabricated a thin film piezoelectric force sensor and proposed an enhanced sensing tool to be used for analyzing gentle touches without the external voltage source used in FET sensors. Both the linear sensor response from 3 kPa to 30 kPa and the exact signal responses from the moving direction illustrate the strong feasibility of the described thin film miniaturized piezoelectric force sensor.

  6. A Micro-Fabricated Force Sensor Using an All Thin Film Piezoelectric Active Sensor

    Directory of Open Access Journals (Sweden)

    Junwoo Lee

    2014-11-01

    Full Text Available The ability to measure pressure and force is essential in biomedical applications such as minimally invasive surgery (MIS and palpation for detecting cancer cysts. Here, we report a force sensor for measuring a shear and normal force by combining an arrayed piezoelectric sensors layer with a precut glass top plate connected by four stress concentrating legs. We designed and fabricated a thin film piezoelectric force sensor and proposed an enhanced sensing tool to be used for analyzing gentle touches without the external voltage source used in FET sensors. Both the linear sensor response from 3 kPa to 30 kPa and the exact signal responses from the moving direction illustrate the strong feasibility of the described thin film miniaturized piezoelectric force sensor.

  7. Biomimetic actuator and sensor for robot hand

    International Nuclear Information System (INIS)

    Kim, Baekchul; Chung, Jinah; Cho, Hanjoung; Shin, Seunghoon; Lee, Hyoungsuk; Moon, Hyungpil; Choi, Hyouk Ryeol; Koo, Jachoon

    2012-01-01

    To manufacture a robot hand that essentially mimics the functions of a human hand, it is necessary to develop flexible actuators and sensors. In this study, we propose the design, manufacture, and performance verification of flexible actuators and sensors based on Electro Active Polymer (EAP). EAP is fabricated as a type of film, and it moves with changes in the voltage because of contraction and expansion in the polymer film. Furthermore, if a force is applied to an EAP film, its thickness and effective area change, and therefore, the capacitance also changes. By using this mechanism, we produce capacitive actuators and sensors. In this study, we propose an EAP based capacitive sensor and evaluate its use as a robot hand sensor

  8. Biomimetic actuator and sensor for robot hand

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Baekchul; Chung, Jinah; Cho, Hanjoung; Shin, Seunghoon; Lee, Hyoungsuk; Moon, Hyungpil; Choi, Hyouk Ryeol; Koo, Jachoon [Sungkyunkwan Univ., Seoul (Korea, Republic of)

    2012-12-15

    To manufacture a robot hand that essentially mimics the functions of a human hand, it is necessary to develop flexible actuators and sensors. In this study, we propose the design, manufacture, and performance verification of flexible actuators and sensors based on Electro Active Polymer (EAP). EAP is fabricated as a type of film, and it moves with changes in the voltage because of contraction and expansion in the polymer film. Furthermore, if a force is applied to an EAP film, its thickness and effective area change, and therefore, the capacitance also changes. By using this mechanism, we produce capacitive actuators and sensors. In this study, we propose an EAP based capacitive sensor and evaluate its use as a robot hand sensor.

  9. Voltage Quality of Grid Connected Wind Turbines

    DEFF Research Database (Denmark)

    Chen, Zhe; Blaabjerg, Frede; Sun, Tao

    2004-01-01

    Grid connected wind turbines may cause quality problems, such as voltage variation and flicker. This paper discusses the voltage variation and flicker emission of grid connected wind turbines with doubly-fed induction generators. A method to compensate flicker by using a voltage source converter...

  10. Manufacturing technology for practical Josephson voltage normals

    International Nuclear Information System (INIS)

    Kohlmann, Johannes; Kieler, Oliver

    2016-01-01

    In this contribution we present the manufacturing technology for the fabrication of integrated superconducting Josephson serial circuits for voltage normals. First we summarize some foundations for Josephson voltage normals and sketch the concept and the setup of the circuits, before we describe the manufacturing technology form modern practical Josephson voltage normals.

  11. 49 CFR 234.221 - Lamp voltage.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Lamp voltage. 234.221 Section 234.221 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION..., Inspection, and Testing Maintenance Standards § 234.221 Lamp voltage. The voltage at each lamp shall be...

  12. Bootstrapped Low-Voltage Analog Switches

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper

    1999-01-01

    Novel low-voltage constant-impedance analog switch circuits are proposed. The switch element is a single MOSFET, and constant-impedance operation is obtained using simple circuits to adjust the gate and bulk voltages relative to the switched signal. Low-voltage (1-volt) operation is made feasible...

  13. Voltage generators of high voltage high power accelerators

    International Nuclear Information System (INIS)

    Svinin, M.P.

    1981-01-01

    High voltage electron accelerators are widely used in modern radiation installations for industrial purposes. In the near future further increasing of their power may be effected, which enables to raise the efficiency of the radiation processes known and to master new power-consuming production in industry. Improvement of HV generators by increasing their power and efficiency is one of many scientific and engineering aspects the successful solution of which provides further development of these accelerators and their technical parameters. The subject is discussed in detail. (author)

  14. Automotive sensors

    Science.gov (United States)

    Marek, Jiri; Illing, Matthias

    2003-01-01

    Sensors are an essential component of most electronic systems in the car. They deliver input parameters for comfort features, engine and emission control as well as for the active and passive safety systems. New technologies such as silicon micromachining play an important role for the introduction of these sensors in all vehicle classes. The importance and use of these sensor technologies in today"s automotive applications will be shown in this article. Finally an outlook on important current developments and new functions in the car will be given.

  15. Piezoceramic Sensors

    CERN Document Server

    Sharapov, Valeriy

    2011-01-01

    This book presents the latest and complete information about various types of piezosensors. A sensor is a converter of the measured physical size to an electric signal. Piezoelectric transducers and sensors are based on piezoelectric effects. They have proven to be versatile tools for the measurement of various processes. They are used for quality assurance, process control and for research and development in many different industries. In each area of application specific requirements to the parameters of transducers and sensors are developed. This book presents the fundamentals, technical des

  16. A Low-input-voltage Wireless Power Transfer for Biomedical Implants

    DEFF Research Database (Denmark)

    Jiang, Hao; Bai, Kangjun; Zhu, Weijie

    2015-01-01

    Wireless power transfer is an essential technology to increase implants' longevity. A pair of inductivelycoupled coils operating at radio-frequency is extensively used to deliver electrical power to implants wirelessly. In this system, a power conditioning circuit is required convert the induced...... in the rectifier for the efficient AC to DC conversion. This requirement results in larger coil size, shorter operating distance or more stringent geometrical alignment between the two coils. In this paper, a low-input-voltage wireless power transfer has been demonstrated. In this system, the opencircuit voltage...... time-varying AC power harvested by the receiving coil to a stable DC power that is needed for powering circuits and sensors. Most existing power conditioning circuits require the induced voltage of the receiving coil to be significantly higher than the turn-on voltage of the diodes used...

  17. The voltage-sensing domain of a phosphatase gates the pore of a potassium channel.

    Science.gov (United States)

    Arrigoni, Cristina; Schroeder, Indra; Romani, Giulia; Van Etten, James L; Thiel, Gerhard; Moroni, Anna

    2013-03-01

    The modular architecture of voltage-gated K(+) (Kv) channels suggests that they resulted from the fusion of a voltage-sensing domain (VSD) to a pore module. Here, we show that the VSD of Ciona intestinalis phosphatase (Ci-VSP) fused to the viral channel Kcv creates Kv(Synth1), a functional voltage-gated, outwardly rectifying K(+) channel. Kv(Synth1) displays the summed features of its individual components: pore properties of Kcv (selectivity and filter gating) and voltage dependence of Ci-VSP (V(1/2) = +56 mV; z of ~1), including the depolarization-induced mode shift. The degree of outward rectification of the channel is critically dependent on the length of the linker more than on its amino acid composition. This highlights a mechanistic role of the linker in transmitting the movement of the sensor to the pore and shows that electromechanical coupling can occur without coevolution of the two domains.

  18. 99mTc-O2S4: a new generation hepatobiliary imaging agent

    International Nuclear Information System (INIS)

    Babbar, A.K.; Mathur, R.; Katiyar, N.; Dutta, M.; Flora; Mishra, A.K.; Yadav, A.

    2010-01-01

    Full text: Hepatobiliary imaging radionuclide - 99m Tc-Mebrofenin is indicated as a hepatobiliary imaging agent for the evaluation of hepatobiliary tract patency to differentiate jaundice resulting from hepatocellular causes from jaundice resulting from partial or complete biliary obstruction; to differentiate extrahepatic biliary atresia from neonatal hepatitis; to detect cystic duct obstruction associated with acute cholecystitis; and to detect bile leaks. Also, 99m Tc-Mebrofenin may be useful to detect intrahepatic cholestasis and to distinguish it from other hepatobiliary diseases, which involve hepatocyte damage. However, the Mebrofenin kit has to be obtained at an exorbitant cost and there was need to develop an indigenous kit that was readily available and could give similar results. For the first time in India, a derivative of DMSA developed by DRDE, Gwalior and modified at INMAS, Delhi to adopt early transition metals, was successfully labelled with 99m Tc (LE>99%). The reaction conditions were optimized after studying the effects of amount of SnCl 2 , pH of the reaction and effect of incubation time. The labelled product 99m Tc-O 2 S 4 , was characterized by ITLC-SG using acetone and saline. The complex was found to be fairly stable at room temperature and showed>95% plasma protein binding. The biodistribution studies showed that after intravenous administration, there was immediate accumulation of radioactivity in liver, the activity kept on increasing in gall bladder with time and thereafter the radioactivity moved to common bile duct (CBD) and small intestines. No significant radioactivity was found in kidneys and blood. Clear visualization of the gallbladder and intestines, within 15 to 45 minutes of administration of 99m Tc-O 2 S 4 in normal rabbit, demonstrates hepatobiliary tract patency of the newly developed radiotracer. The dynamic and static images showed that the newly developed radiopharmaceutical 99m Tc-O 2 S 4 has full potential in studying

  19. Structure and transport properties of the electronically correlated thiospinel CuV2S4

    International Nuclear Information System (INIS)

    Horny, R.

    2005-01-01

    This work deals with the single crystal growth and the characterization of crystallographic, magnetic and mainly electronic transport properties of the metallic thiospinel CuV 2 S 4 , which is isostructural and isoelectronic to the heavy fermion system LiV 2 O 4 . Former reports of an enhanced Sommerfeld-coefficient of the specific heat indicated that electronic correlations are present in CuV 2 S 4 as well. Additionally CuV 2 S 4 shows a phase transition at 90 K, which has been associated with the formation of a charge density wave (CDW), whose propagation vector changes its length at two additional phase transitions close to 75 K and 55 K. The formation of a CDW is a typical low dimensional order phenomenon and very unusual for a three dimensional system with a cubic crystal symmetry in the high temperature phase. An additional motivation for the efforts to grow single crystals of this compound was a sample dependency which seemed to correlate with the type of transport agent (iodine or chlorine) used in the chemical transport reaction as the preferred preparation procedure for the single crystal growth. Due to the direct comparison of single crystals grown by both types of transport agents it could be shown that a very low concentration of chlorine is the origin for the almost complete suppression of the phase transitions in the corresponding type of single crystals. The strong sensitivity of the CDW-formation to disorder is also reflected by the huge increase of the residual resistivity ratio of more than one order of magnitude which could only be achieved by annealing procedures in the case of single crystals grown with iodine as transport agent. The high quality of the samples allowed for the first time to detect all three phase transition signatures in resistivity measurements. Their almost identical temperature dependence as a function of external hydrostatic pressure emphasizes their common physical origin. The coefficient of the T 2 behavior of the

  20. Precision holography for N={2}^{\\ast } on S 4 from type IIB supergravity

    Science.gov (United States)

    Bobev, Nikolay; Gautason, Friðrik Freyr; van Muiden, Jesse

    2018-04-01

    We find a new supersymmetric solution of type IIB supergravity which is holographically dual to the planar limit of the four-dimensional N={2}^{\\ast } supersymmetric Yang-Mills theory on S 4. We study a probe fundamental string in this background which is dual to a supersymmetric Wilson loop in the N={2}^{\\ast } theory. Using holography we calculate the expectation value of this line operator to leading order in the 't Hooft coupling. The result is a non-trivial function of the mass parameter of the N={2}^{\\ast } theory that precisely matches the result from supersymmetric localization.

  1. Voltage Management in Unbalanced Low Voltage Networks Using a Decoupled Phase-Tap-Changer Transformer

    DEFF Research Database (Denmark)

    Coppo, Massimiliano; Turri, Roberto; Marinelli, Mattia

    2014-01-01

    The paper studies a medium voltage-low voltage transformer with a decoupled on load tap changer capability on each phase. The overall objective is the evaluation of the potential benefits on a low voltage network of such possibility. A realistic Danish low voltage network is used for the analysis...

  2. 76 FR 70721 - Voltage Coordination on High Voltage Grids; Notice of Staff Workshop

    Science.gov (United States)

    2011-11-15

    ... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket No. AD12-5-000] Voltage Coordination on High Voltage Grids; Notice of Staff Workshop Take notice that the Federal Energy Regulatory Commission will hold a Workshop on Voltage Coordination on High Voltage Grids on Thursday, December 1, 2011...

  3. Piezo Voltage Controlled Planar Hall Effect Devices.

    Science.gov (United States)

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-06-22

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

  4. Mapping the membrane-aqueous border for the voltage-sensing domain of a potassium channel.

    Science.gov (United States)

    Neale, Edward J; Rong, Honglin; Cockcroft, Christopher J; Sivaprasadarao, Asipu

    2007-12-28

    Voltage-sensing domains (VSDs) play diverse roles in biology. As integral components, they can detect changes in the membrane potential of a cell and couple these changes to activity of ion channels and enzymes. As independent proteins, homologues of the VSD can function as voltage-dependent proton channels. To sense voltage changes, the positively charged fourth transmembrane segment, S4, must move across the energetically unfavorable hydrophobic core of the bilayer, which presents a barrier to movement of both charged species and protons. To reduce the barrier to S4 movement, it has been suggested that aqueous crevices may penetrate the protein, reducing the extent of total movement. To investigate this hypothesis in a system containing fully functional channels in a native environment with an intact membrane potential, we have determined the contour of the membrane-aqueous border of the VSD of KvAP in Escherichia coli by examining the chemical accessibility of introduced cysteines. The results revealed the contour of the membrane-aqueous border of the VSD in its activated conformation. The water-inaccessible regions of S1 and S2 correspond to the standard width of the membrane bilayer (~28 A), but those of S3 and S4 are considerably shorter (> or = 40%), consistent with aqueous crevices pervading both the extracellular and intracellular ends. One face of S3b and the entire S3a were water-accessible, reducing the water-inaccessible region of S3 to just 10 residues, significantly shorter than for S4. The results suggest a key role for S3 in reducing the distance S4 needs to move to elicit gating.

  5. Voltage-Gated Calcium Channels

    Science.gov (United States)

    Zamponi, Gerald Werner

    Voltage Gated Calcium Channels is the first comprehensive book in the calcium channel field, encompassing over thirty years of progress towards our understanding of calcium channel structure, function, regulation, physiology, pharmacology, and genetics. This book balances contributions from many of the leading authorities in the calcium channel field with fresh perspectives from risings stars in the area, taking into account the most recent literature and concepts. This is the only all-encompassing calcium channel book currently available, and is an essential resource for academic researchers at all levels in the areas neuroscience, biophysics, and cardiovascular sciences, as well as to researchers in the drug discovery area.

  6. Optischer Sensor

    OpenAIRE

    Brandenburg, A.; Hutter, F.; Edelhaeuser, R.

    1992-01-01

    WO 2010040565 A1 UPAB: 20100506 NOVELTY - The integrated optical sensor comprises a first waveguide (4), a second waveguide (5) optically coupled to the first waveguide via a directional coupler, a substrate, which carries the first and the second waveguides, a single waveguide coupled with a light source, and an output waveguide coupled with a light-sensitive element. The sensor has a functional surface in the region of the directional coupler for depositing or deposition of the substance to...

  7. Wireless sensor

    Science.gov (United States)

    Lamberti, Vincent E.; Howell, JR, Layton N.; Mee, David K.; Sepaniak, Michael J.

    2016-02-09

    Disclosed is a sensor for detecting a target material. The sensor includes a ferromagnetic metal and a molecular recognition reagent coupled to the ferromagnetic metal. The molecular recognition reagent is operable to expand upon exposure to vapor or liquid from the target material such that the molecular recognition reagent changes a tensile stress upon the ferromagnetic metal. The target material is detected based on changes in the magnetic switching characteristics of the ferromagnetic metal caused by the changes in the tensile stress.

  8. Breeding potential of S4 maize lines in topcrosses for agronomic and forage traits

    Directory of Open Access Journals (Sweden)

    Mariana Martins Marcondes

    2016-06-01

    Full Text Available This study aimed to evaluate the performance of 46 maize lines (S4 obtained from crosses between the commercial hybrids Penta x P30F53 in topcrosses with the commercial simple cross hybrid Dow8460 (tester and checks (hybrids Penta, P30F53, Dow8460 and Status. The grain yield was evaluated in two environments in Guarapuava, Paraná State, and the effects of genotype, environment and genotype x environment interaction were significant. The grain yield of the topcross hybrids ranged from 8,416 to 13,428 kg ha-1. The agronomic characteristics of the forage and the bromatological characteristics of the silage were evaluated in environment 1. The green mass yield of the forage ranged from 48,767 to 87,714 kg ha-1 and the dry mass yield ranged from 14,749 to 26,130 kg ha-1. The neutral detergent fiber content ranged from 44.85 to 58.45% and the acid detergent fiber content ranged from 28.28 to 37.06%. The relative feed value of the silage ranged between 100.5 and 138.5. The tester, hybrid Dow8460, was efficient to discriminate the relative performance of the S4 lines in the topcrosses.

  9. The crystal structure of kudriavite, (Cd,Pb)Bi2S4

    DEFF Research Database (Denmark)

    Balic Zunic, Tonci; Makovicky, Emil

    2007-01-01

    The crystal structure of kudriavite, (Cd,Pb)Bi2S4, a new mineral species, was solved from single-crystal X-ray-diffraction data and refi ned to R = 4.9% (4.3% for a model with split mixed-cation sites). Lattice parameters are a 13.095(1), b 4.0032(3), c 14.711(1) Å, 115.59(1)°, V 695.6(1) Å3....... The structure is equivalent to that of synthetic CdBi2S4, space group C2/m, Z = 4, and represents a pavonite homologue, N = 3. It is built of three-octahedron-thick columns of (311)PbS-like slabs combined by "unitcell twinning" in a quasi-mirror-glide succession. The slabs, which are intrinsically of the same...... topology, differ in the coordination state of bordering cations because of the relative positions of the adjacent layers. In the slabs of type I (the "non-accreting" slab common to all pavonite homologues), the central columns of octahedra are fl anked by half-octahedral (square-pyramidal) coordinations...

  10. Two design of the S4.BEN01 magnet for the CBETA splitter/merger

    Energy Technology Data Exchange (ETDEWEB)

    Tsoupas, N. [Brookhaven National Lab. (BNL), Upton, NY (United States); Berg, S. [Brookhaven National Lab. (BNL), Upton, NY (United States); Meot, F. [Brookhaven National Lab. (BNL), Upton, NY (United States); Ptitsyn, V. [Brookhaven National Lab. (BNL), Upton, NY (United States); Trbojevic, D. [Brookhaven National Lab. (BNL), Upton, NY (United States); Tuozzolo, J. [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2017-04-10

    The splitter/merger section of the CBETA project [1] consists of 4 beam lines as shown in Fig. 1. Two of the functions of the splitter’s/merger’s lines is to match the beam parameters at the exit of the Energy Recovery Linac (ERL) to the beam parameters at the entrance of the Fixed Field Alternating Gradient (FFAG) arc, and also place the reference particles of the beam bunches at the entrance of the FFAG arc on specified trajectories according to their energies. In this technical note we are presenting results from the 2D and 3D electromagnetic analysis of the S4.BEN01 magnet which is one of the dipole magnets of the 150 MeV line of the splitter/merger. In particular we present results from two designs of the S4.BEN01 magnet, one based on iron dominated current-excited magnet, and the other design based on Halbach-type permanent magnet. An evaluation of the two designs will be given in the section under “conclusion”.

  11. The role of extended Fe4S4 cluster ligands in mediating sulfite reductase hemoprotein activity.

    Science.gov (United States)

    Cepeda, Marisa R; McGarry, Lauren; Pennington, Joseph M; Krzystek, J; Elizabeth Stroupe, M

    2018-05-28

    The siroheme-containing subunit from the multimeric hemoflavoprotein NADPH-dependent sulfite reductase (SiR/SiRHP) catalyzes the six electron-reduction of SO 3 2- to S 2- . Siroheme is an iron-containing isobacteriochlorin that is found in sulfite and homologous siroheme-containing nitrite reductases. Siroheme does not work alone but is covalently coupled to a Fe 4 S 4 cluster through one of the cluster's ligands. One long-standing hypothesis predicted from this observation is that the environment of one iron-containing cofactor influences the properties of the other. We tested this hypothesis by identifying three amino acids (F437, M444, and T477) that interact with the Fe 4 S 4 cluster and probing the effect of altering them to alanine on the function and structure of the resulting enzymes by use of activity assays, X-ray crystallographic analysis, and EPR spectroscopy. We showed that F437 and M444 gate access for electron transfer to the siroheme-cluster assembly and the direct hydrogen bond between T477 and one of the cluster sulfides is important for determining the geometry of the siroheme active site. Copyright © 2018. Published by Elsevier B.V.

  12. Two-dimensional magnetism in the triangular antiferromagnet NiGa2S4

    International Nuclear Information System (INIS)

    Nambu, Yusuke

    2013-01-01

    At sufficiently low temperatures, electron spins in normal magnets generally order into some fashion, for instance, ferromagnetic and antiferromagnetic. Geometrical frustration and/or reduced dimensionality can suppress such conventional orders, and occasionally induce unknown states of matter. This is the case for the two-dimensional (2D) triangular antiferromagnet Ni(Ga 2 S 4 , in which S=1 nickel spins do not order, instead show an exotic magnetism. We found (1) a resonant critical slowing down toward T*=8.5 K followed by a viscous spin liquid behavior, and (2) a spin-size dependent ground state. To elucidate (1), spin dynamics ranging from 10 -13 to 10 0 seconds were quantitatively explored through the experimental techniques such as inelastic neutron scattering, backscattering, neutron spin echo, ac and nonlinear susceptibilities. The finding of (2) is evidenced by impurity effects. Integer spins substituted systems such as zinc and iron ions retain a quadratic temperature dependence of the magnetic specific heat as for the parent compound. However, substitutions of half-odd integer spins, cobalt and manganese ions, eventually induce a distinct behavior, indicating an importance of integer size of spins to stabilize the 2D magnetism realized in NiGa 2 S 4 . The article gives our experimental findings and as well as some relevant theoretical scenarios. (author)

  13. Structural, optical and electrical studies on pulse electrodeposited CdIn2S4 thin films

    International Nuclear Information System (INIS)

    Kokate, A.V.; Asabe, M.R.; Shelake, S.B.; Hankare, P.P.; Chougule, B.K.

    2007-01-01

    CdIn 2 S 4 thin films were prepared by pulse electrodeposition technique over F:SnO 2 glass and stainless steel substrates in galvanostatic mode from an aqueous acidic bath containing CdSO 4 , InCl 3 and Na 2 S 2 O 3 . The growth kinetics of the film has been studied and the deposition parameters such as electrolyte bath concentration, bath temperature, time of deposition, deposition current and pH of the bath are optimized. X-ray diffraction (XRD) analysis of the as deposited and annealed films shows polycrystalline nature. Energy dispersive analysis by X-ray (EDAX) confirms nearly stoichiometric CdIn 2 S 4 nature of the film. Scanning electron microscope (SEM) studies show that, the deposited films are well adherent and grains are uniformly distributed over the surface of the substrate. The optical transmission spectra show a direct band gap of 2.16 eV. Conductivity measurements have been carried out at different temperatures and electrical parameters such as activation energy, trapped energy state and barrier heights etc. have been determined

  14. Properties of pulsed electrodeposited CdIn2S4 thin film

    International Nuclear Information System (INIS)

    Hankare, P.P.; Kokate, A.V.; Asabe, M.R.; Delekar, S.D.; Chougule, B.K.

    2006-01-01

    CdIn 2 S 4 thin films are prepared by pulsed electrodeposition technique over F:SnO 2 glass and stainless steel substrates in galvanostatic mode from an aqueous acidic bath containing CdSO 4 , InCl 3 and Na 2 S 2 O 3 . The growth kinetics of the film was studied and the deposition parameters such as electrolyte bath concentration, bath temperature, time of deposition, deposition current, and pH of the electrolyte bath are optimized. X-ray diffraction (XRD) analysis of the as deposited and annealed films showed the presence of polycrystalline nature. Energy dispersive analysis (EDAX) spectrum of the surface composition confirms the nearly stoichiometric CdIn 2 S 4 nature of the film. Surface morphology studies by scanning electron microscope (SEM) shows that, the deposited films are well adherent and grains are uniformly distributed over the surface of substrate. The optical transmission spectra show a direct band gap value of 2.16 eV

  15. Precision spectroscopy of the 2S-4P transition in atomic hydrogen

    Science.gov (United States)

    Maisenbacher, Lothar; Beyer, Axel; Matveev, Arthur; Grinin, Alexey; Pohl, Randolf; Khabarova, Ksenia; Kolachevsky, Nikolai; Hänsch, Theodor W.; Udem, Thomas

    2017-04-01

    Precision measurements of atomic hydrogen have long been successfully used to extract fundamental constants and to test bound-state QED. However, both these applications are limited by measurements of hydrogen lines other than the very precisely known 1S-2S transition. Moreover, the proton r.m.s.charge radius rp extracted from electronic hydrogen measurements currently disagrees by 4 σ with the much more precise value extracted from muonic hydrogen spectroscopy. We have measured the 2S-4P transition in atomic hydrogen using a cryogenic beam of hydrogen atoms optically excited to the initial 2S state. The first order Doppler shift of the one-photon 2S-4P transition is suppressed by actively stabilized counter-propagating laser beams and time-of-flight resolved detection. Quantum interference between excitation paths can lead to significant line distortions in our system. We use an experimentally verified, simple line shape model to take these distortions into account. With this, we can extract a new value for rp and the Rydberg constant R∞ with comparable accuracy as the combined previous H world data.

  16. Spray-coated ligand-free Cu2ZnSnS4 nanoparticle thin films

    DEFF Research Database (Denmark)

    Engberg, Sara Lena Josefin; Murthy, Swathi; Kofod, Guggi

    We have fabricated Cu2ZnSnS4 (CZTS) thin films from spray-coating ligand-free nanoparticle inks. The as-synthesized CZTS nanoparticles were inherently ligand-free [1], which allows the use of polar solvents, such as water and ethanol. Another advantage of these particles is that user- and environ......We have fabricated Cu2ZnSnS4 (CZTS) thin films from spray-coating ligand-free nanoparticle inks. The as-synthesized CZTS nanoparticles were inherently ligand-free [1], which allows the use of polar solvents, such as water and ethanol. Another advantage of these particles is that user......- and environmentally-friendly alkali metal chloride salts can be directly dissolved in controllable amounts. The homogeneous distribution of alkali metals in the ink allows uniform grain growth within the deposited absorber layer as a result of liquid phase assisted sintering. We find that particularly beneficial...... as an unquantifiable amount of ZnS. A Sono-tek spray-coating system is used which utilizes ultrasonic atomization. We investigate the effect of different binders, ink concentration, and spray-coating conditions, i.e. spray power, flow rate from syringe pump, distance between spray nozzle and the substrate, and time...

  17. Fermion masses and flavor mixings in a model with S4 flavor symmetry

    International Nuclear Information System (INIS)

    Ding Guijun

    2010-01-01

    We present a supersymmetric model of quark and lepton based on S 4 xZ 3 xZ 4 flavor symmetry. The S 4 symmetry is broken down to Klein four and Z 3 subgroups in the neutrino and the charged lepton sectors, respectively. Tri-Bimaximal mixing and the charged lepton mass hierarchies are reproduced simultaneously at leading order. Moreover, a realistic pattern of quark masses and mixing angles is generated with the exception of the mixing angle between the first two generations, which requires a small accidental enhancement. It is remarkable that the mass hierarchies are controlled by the spontaneous breaking of flavor symmetry in our model. The next to leading order contributions are studied, all the fermion masses and mixing angles receive corrections of relative order λ c 2 with respect to the leading order results. The phenomenological consequences of the model are analyzed, the neutrino mass spectrum can be normal hierarchy or inverted hierarchy, and the combined measurement of the 0ν2β decay effective mass m ββ and the lightest neutrino mass can distinguish the normal hierarchy from the inverted hierarchy.

  18. Outward Rectification of Voltage-Gated K+ Channels Evolved at Least Twice in Life History.

    Directory of Open Access Journals (Sweden)

    Janin Riedelsberger

    Full Text Available Voltage-gated potassium (K+ channels are present in all living systems. Despite high structural similarities in the transmembrane domains (TMD, this K+ channel type segregates into at least two main functional categories-hyperpolarization-activated, inward-rectifying (Kin and depolarization-activated, outward-rectifying (Kout channels. Voltage-gated K+ channels sense the membrane voltage via a voltage-sensing domain that is connected to the conduction pathway of the channel. It has been shown that the voltage-sensing mechanism is the same in Kin and Kout channels, but its performance results in opposite pore conformations. It is not known how the different coupling of voltage-sensor and pore is implemented. Here, we studied sequence and structural data of voltage-gated K+ channels from animals and plants with emphasis on the property of opposite rectification. We identified structural hotspots that alone allow already the distinction between Kin and Kout channels. Among them is a loop between TMD S5 and the pore that is very short in animal Kout, longer in plant and animal Kin and the longest in plant Kout channels. In combination with further structural and phylogenetic analyses this finding suggests that outward-rectification evolved twice and independently in the animal and plant kingdom.

  19. Structure of Voltage-gated Two-pore Channel TPC1 from Arabidopsis thaliana

    Science.gov (United States)

    Guo, Jiangtao; Zeng, Weizhong; Chen, Qingfeng; Lee, Changkeun; Chen, Liping; Yang, Yi; Cang, Chunlei; Ren, Dejian; Jiang, Youxing

    2015-01-01

    Two-pore channels (TPCs) contain two copies of a Shaker-like six-transmembrane (6-TM) domain in each subunit and are ubiquitously expressed in both animals and plants as organellar cation channels. Here, we present the first crystal structure of a vacuolar two-pore channel from Arabidopsis thaliana, AtTPC1, which functions as a homodimer. AtTPC1 activation requires both voltage and cytosolic Ca2+. Ca2+ binding to the cytosolic EF-hand domain triggers conformational changes coupled to the pair of pore-lining inner helices (IS6 helices) from the first 6-TM domains, whereas membrane potential only activates the second voltage-sensing domain (VSD2) whose conformational changes are coupled to the pair of inner helices (IIS6 helices) from the second 6-TM domains. Luminal Ca2+ or Ba2+ can modulate voltage activation by stabilizing VSD2 in the resting state and shifts voltage activation towards more positive potentials. Our Ba2+ bound AtTPC1 structure reveals a voltage sensor in the resting state, providing hitherto unseen structural insight into the general voltage-gating mechanism among voltage-gated channels. PMID:26689363

  20. Piezoelectric self sensing actuators for high voltage excitation

    International Nuclear Information System (INIS)

    Grasso, E; Totaro, N; Janocha, H; Naso, D

    2013-01-01

    Self sensing techniques allow the use of a piezoelectric transducer simultaneously as an actuator and as a sensor. Such techniques are based on knowledge of the transducer behaviour and on measurements of electrical quantities, in particular voltage and charge. Past research work has mainly considered the linear behaviour of piezoelectric transducers, consequently restricting the operating driving voltages to low values. In this work a new self sensing technique is proposed which is able to perform self sensing reconstruction both at low and at high driving voltages. This technique, in fact, makes use of a hysteretic model to describe the nonlinear piezoelectric capacitance necessary for self sensing reconstruction. The capacitance can be measured and identified at the antiresonances of a vibrating structure with a good approximation. After providing a mathematical background to deal with the main aspects of self sensing, this technique is compared theoretically and experimentally to a typical linear one by using an aluminum plate with one bonded self sensing transducer and a positive position feedback (PPF) controller to verify the performance in self sensing based vibration control. (paper)

  1. PZT/PLZT - elastomer composites with improved piezoelectric voltage coefficient

    Science.gov (United States)

    Harikrishnan, K.; Bavbande, D. V.; Mohan, Dhirendra; Manoharan, B.; Prasad, M. R. S.; Kalyanakrishnan, G.

    2018-02-01

    Lead Zirconate Titanate (PZT) and Lanthanum-modified Lead Zirconate Titanate (PLZT) ceramic sensor materials are widely used because of their excellent piezoelectric coefficients. These materials are brittle, high density and have low achievable piezoelectric voltage coefficients. The density of the sintered ceramics shall be reduced by burnable polymeric sponge method. The achievable porosity level in this case is nearly 60 - 90%. However, the porous ceramic structure with 3-3 connectivity produced by this method is very fragile in nature. The strength of the porous structure is improved with Sylgard®-184 (silicone elastomer) by vacuum impregnation method maintaining the dynamic vacuum level in the range of -650 mm Hg. The elastomer Sylgard®-184 is having low density, low dielectric constant and high compliance (as a resultant stiffness of the composites is increased). To obtain a net dipole moment, the impregnated ceramic composites were subjected to poling treatment with varying conditions of D.C. field and temperature. The properties of the poled PZT/PLZT - elastomer composites were characterized with LCR meter for measuring the dielectric constant values (k), d33 meter used for measuring piezo-electric charge coefficient values (d33) and piezo-electric voltage coefficient (g33) values which were derived from d33 values. The voltage coefficient (g33) values of these composites are increased by 10 fold as compared to the conventional solid ceramics demonstrates that it is possible to fabricate a conformable detector.

  2. Research experiments on pressure-difference sensors with ferrofluid

    Energy Technology Data Exchange (ETDEWEB)

    Ruican, Hao, E-mail: haoruican@163.com [School of Mechanical Engineering, Beijing Polytechnic, Beijing 100176 (China); Huagang, Liu; Wen, Gong; Na, Zhang [School of Mechanical Engineering, Beijing Polytechnic, Beijing 100176 (China); Ruixiao, Hao [Civil and Architectural Engineering Institute of CCCC-FHEB Co., Ltd., Beijing 101102 (China)

    2016-10-15

    Ferrofluid has distinctive properties and can be applied in many industrial uses, especially in sensors. The principles of pressure-difference sensors with ferrofluid were illustrated and experiments were demonstrated. Four types of ferrofluids with different concentrations were selected for the experiments performed. Then, the parameters of ferrofluid, such as density and magnetization, were measured. The magnetization curves of the ferrofluid were sketched. Four U tubes with different diameters were designed and built. Experiments were conducted to analyze the impacts of tube diameter and ferrofluid concentration on the output voltage/pressure difference performance. According to the experiment results, the tube diameter has little effect on the sensor output voltage. With the concentration of ferrofluid increasing, the output voltage and sensitivity of the pressure-difference sensor increases. The measurable range of the sensor also increases with the increasing concentration of ferrofluid. The workable range and the sensitivity of the designed sensor were (−2000~+2000)Pa and 1.26 mV/Pa, respectively. - Highlights: • The principle of pressure difference sensor with ferrofluid was illustrated. • The parameters of ferrofluid, such as density and magnetization, were measured. The magnetization curves of the ferrofluid were sketched. • Four series of U tubes with different diameter were designed and manufactured. • The experiments were made to analyze the factors of the tube diameter and the concentration of ferrofluid on the output-input pressure difference. • The sensitivity of the pressure difference sensor with ferrofluid was studied and the corresponding conclusions were obtained.

  3. Research experiments on pressure-difference sensors with ferrofluid

    International Nuclear Information System (INIS)

    Ruican, Hao; Huagang, Liu; Wen, Gong; Na, Zhang; Ruixiao, Hao

    2016-01-01

    Ferrofluid has distinctive properties and can be applied in many industrial uses, especially in sensors. The principles of pressure-difference sensors with ferrofluid were illustrated and experiments were demonstrated. Four types of ferrofluids with different concentrations were selected for the experiments performed. Then, the parameters of ferrofluid, such as density and magnetization, were measured. The magnetization curves of the ferrofluid were sketched. Four U tubes with different diameters were designed and built. Experiments were conducted to analyze the impacts of tube diameter and ferrofluid concentration on the output voltage/pressure difference performance. According to the experiment results, the tube diameter has little effect on the sensor output voltage. With the concentration of ferrofluid increasing, the output voltage and sensitivity of the pressure-difference sensor increases. The measurable range of the sensor also increases with the increasing concentration of ferrofluid. The workable range and the sensitivity of the designed sensor were (−2000~+2000)Pa and 1.26 mV/Pa, respectively. - Highlights: • The principle of pressure difference sensor with ferrofluid was illustrated. • The parameters of ferrofluid, such as density and magnetization, were measured. The magnetization curves of the ferrofluid were sketched. • Four series of U tubes with different diameter were designed and manufactured. • The experiments were made to analyze the factors of the tube diameter and the concentration of ferrofluid on the output-input pressure difference. • The sensitivity of the pressure difference sensor with ferrofluid was studied and the corresponding conclusions were obtained.

  4. Triboelectric Hydrogen Gas Sensor with Pd Functionalized Surface

    Directory of Open Access Journals (Sweden)

    Sung-Ho Shin

    2016-10-01

    Full Text Available Palladium (Pd-based hydrogen (H2 gas sensors have been widely investigated thanks to its fast reaction and high sensitivity to hydrogen. Various sensing mechanisms have been adopted for H2 gas sensors; however, all the sensors must be powered through an external battery. We report here an H2 gas sensor that can detect H2 by measuring the output voltages generated during contact electrification between two friction surfaces. When the H2 sensor, composed of Pd-coated ITO (indium tin oxide and PET (polyethylene Terephthalate film, is exposed to H2, its output voltage is varied in proportion to H2 concentration because the work function (WF of Pd-coated surface changes, altering triboelectric charging behavior. Specifically, the output voltage of the sensor is gradually increased as exposing H2 concentration increases. Reproducible and sensitive sensor response was observed up 1% H2 exposure. The approach introduced here can easily be adopted to development of triboelectric gas sensors detecting other gas species.

  5. A Power-Frequency Electric Field Sensor for Portable Measurement.

    Science.gov (United States)

    Xiao, Dongping; Ma, Qichao; Xie, Yutong; Zheng, Qi; Zhang, Zhanlong

    2018-03-31

    In this paper, a new type of electric field sensor is proposed for the health and safety protection of inspection staff in high-voltage environments. Compared with the traditional power frequency electric field measurement instruments, the portable instrument has some special performance requirements and, thus, a new kind of double spherical shell sensor is presented. First, the mathematical relationships between the induced voltage of the sensor, the output voltage of the measurement circuit, and the original electric field in free space are deduced theoretically. These equations show the principle of the proposed sensor to measure the electric field and the effect factors of the measurement. Next, the characteristics of the sensor are analyzed through simulation. The simulation results are in good agreement with the theoretical analysis. The influencing rules of the size and material of the sensor on the measurement results are summarized. Then, the proposed sensor and the matching measurement system are used in a physical experiment. After calibration, the error of the measurement system is discussed. Lastly, the directional characteristic of the proposed sensor is experimentally tested.

  6. Observability of Low Voltage grids

    DEFF Research Database (Denmark)

    Martin-Loeches, Ruben Sánchez; Iov, Florin; Kemal, Mohammed Seifu

    2017-01-01

    Low Voltage (LV) distribution power grids are experiencing a transformation from a passive to a more active role due to the increasing penetration of distributed generation, heat pumps and electrical vehicles. The first step towards a smarter operation of LV electrical systems is to provide grid ...... an updated state of the art on DSSE-AMI based, adaptive data collection techniques and database management system types. Moreover, the ongoing Danish RemoteGRID project is presented as a realistic case study.......Low Voltage (LV) distribution power grids are experiencing a transformation from a passive to a more active role due to the increasing penetration of distributed generation, heat pumps and electrical vehicles. The first step towards a smarter operation of LV electrical systems is to provide grid....... It becomes unrealistic to provide near real time full observability of the LV grid by applying Distribution System State Estimation (DSSE) utilizing the classical data collection and storage/preprocessing techniques. This paper investigates up-todate the observability problem in LV grids by providing...

  7. HOPG/ZnO/HOPG pressure sensor

    Science.gov (United States)

    Jahangiri, Mojtaba; Yousefiazari, Ehsan; Ghalamboran, Milad

    2017-12-01

    Pressure sensor is one of the most commonly used sensors in the research laboratories and industries. These are generally categorized in three different classes of absolute pressure sensors, gauge pressure sensors, and differential pressure sensors. In this paper, we fabricate and assess the pressure sensitivity of the current vs. voltage diagrams in a graphite/ZnO/graphite structure. Zinc oxide layers are deposited on highly oriented pyrolytic graphite (HOPG) substrates by sputtering a zinc target under oxygen plasma. The top electrode is also a slice of HOPG which is placed on the ZnO layer and connected to the outside electronic circuits. By recording the I-V characteristics of the device under different forces applied to the top HOPG electrode, the pressure sensitivity is demonstrated; at the optimum biasing voltage, the device current changes 10 times upon changing the pressure level on the top electrode by 20 times. Repeatability and reproducibility of the observed effect is studied on the same and different samples. All the materials used for the fabrication of this pressure sensor are biocompatible, the fabricated device is anticipated to find potential applications in biomedical engineering.

  8. Application of the Sensor Selection Approach in Polymer Electrolyte Membrane Fuel Cell Prognostics and Health Management

    Directory of Open Access Journals (Sweden)

    Lei Mao

    2017-09-01

    Full Text Available In this paper, the sensor selection approach is investigated with the aim of using fewer sensors to provide reliable fuel cell diagnostic and prognostic results. The sensitivity of sensors is firstly calculated with a developed fuel cell model. With sensor sensitivities to different fuel cell failure modes, the available sensors can be ranked. A sensor selection algorithm is used in the analysis, which considers both sensor sensitivity to fuel cell performance and resistance to noise. The performance of the selected sensors in polymer electrolyte membrane (PEM fuel cell prognostics is also evaluated with an adaptive neuro-fuzzy inference system (ANFIS, and results show that the fuel cell voltage can be predicted with good quality using the selected sensors. Furthermore, a fuel cell test is performed to investigate the effectiveness of selected sensors in fuel cell fault diagnosis. From the results, different fuel cell states can be distinguished with good quality using the selected sensors.

  9. A wireless acoustic emission sensor remotely powered by light

    International Nuclear Information System (INIS)

    Zahedi, F; Huang, H

    2014-01-01

    In this paper, wireless sensing of acoustic emission (AE) signals using a battery-free sensor node remotely powered by light is presented. The wireless sensor consists of a piezoelectric wafer active sensor (PWAS) for AE signal acquisition and a wireless transponder that performs signal conditioning, frequency conversion, and wireless transmission. For signal conditioning, a voltage follower that consumes less than 2 mW was introduced to buffer the high impedance of the PWAS from the low impedance of the wireless transponder. A photocell-based energy harvester with a stable voltage output was developed to power the voltage follower so that the wireless AE sensor can operate without an external power source. The principle of operation of the battery-free wireless AE sensor node and the sensor interrogation system is described, followed by a detailed description of the hardware implementation. The voltage follower and the wireless channel were characterized by ultrasound pitch–catch and pencil lead break experiments. (paper)

  10. STUDY OF THE IMPACT OF THERMAL DRIFT ON RELIABILITY OF PRESSURE SENSORS

    Directory of Open Access Journals (Sweden)

    ABDELAZIZ BEDDIAF

    2017-10-01

    Full Text Available Piezoresistive pressure sensors, using a Wheatstone bridge with the piezoresistors, are typically supplied with a voltage ranging from 3 to 10 V involve thermal drift caused by Joule heating. In this paper, an accurate numerical model for optimization and predicting the thermal drift in piezoresistive pressure sensors due to the electric heater in its piezoresistors is adopted. In this case, by using the solution of 2D heat transfer equation considering Joule heating in Cartesian coordinates for the transient regime, we determine how the temperature affects the sensor when the supply voltage is applied. For this, the elevation of temperature due to the Joule heating has been calculated for various values of supply voltage and for several operating times of the sensor; by varying different geometrical parameters. Otherwise, the variation of the coefficient 44 in p-Si and pressure sensitivity as a function of the applied potential, as well as, for various times, for different dimensions of the device, have been also established. It is observed that the electrical heating leads to an important temperature rise in the piezoresistor. Consequently, it causes drift in the pressure sensitivity of the sensor upon application of a voltage. Finally, this work allows us to evaluate the reliability of sensors. Also, it permits to predict their behaviour against temperature due to the application of a voltage of a bridge and to minimize this effect by optimizing the geometrical parameters of the sensor and by reducing the supply voltage.

  11. The InSAeS4 Airborne X-Band Interferometric SAR System: A First Assessment on Its Imaging and Topographic Mapping Capabilities

    Directory of Open Access Journals (Sweden)

    Stefano Perna

    2016-01-01

    Full Text Available We present in this work a first assessment of the imaging and topographic mapping capabilities of the InSAeS4 system, which is a single-pass interferometric airborne X-Band Synthetic Aperture Radar (SAR. In particular, we first provide a brief description of the InSAeS4 sensor. Then, we discuss the results of our analysis on the SAR and interferometric SAR products relevant to the first flight-test campaign. More specifically, we have exploited as reference the GPS measurements relevant to nine Corner Reflectors (CRs deployed over the illuminated area during the campaign and a laser scanner Digital Elevation Model (DEM. From the analysis carried out on the CRs we achieved a mean geometric resolution, for the SAR products, of about 0.14 m in azimuth and 0.49 m in range, a positioning misalignment with standard deviation of 0.07 m in range and 0.08 m in azimuth, and a height error with standard deviation of 0.51 m. From the comparison with the laser scanner DEM we estimated a height error with standard deviation of 1.57 m.

  12. Dilute Magnetic Semiconductor Cu2FeSnS4 Nanocrystals with a Novel Zincblende Structure

    Directory of Open Access Journals (Sweden)

    Xiaolu Liang

    2012-01-01

    Full Text Available Diluted magnetic semiconductor Cu2FeSnS4 nanocrystals with a novel zincblende structure have been successfully synthesized by a hot-injection approach. Cu+, Fe2+, and Sn4+ ions occupy the same position in the zincblende unit cell, and their occupancy possibilities are 1/2, 1/4, and 1/4, respectively. The nanocrystals were characterized by means of X-ray diffraction (XRD, transmission electron microscopy (TEM, selected area electron diffraction (SAED, energy-dispersive spectroscopy (EDS, and UV-vis-NIR absorption spectroscopy. The nanocrystals have an average size of 7.5 nm and a band gap of 1.1 eV and show a weak ferromagnetic behavior at low temperature.

  13. Loss mechanisms in hydrazine-processed Cu2ZnSn(Se,S)4 solar cells

    Science.gov (United States)

    Gunawan, Oki; Todorov, Teodor K.; Mitzi, David B.

    2010-12-01

    We present a device characterization study for hydrazine-processed kesterite Cu2ZnSn(Se,S)4 (CZTSSe) solar cells with a focus on pinpointing the main loss mechanisms limiting device efficiency. Temperature-dependent study and time-resolved photoluminescence spectroscopy on these cells, in comparison to analogous studies on a reference Cu(In,Ga)(Se,S)2 (CIGS) cell, reveal strong recombination loss at the CZTSSe/CdS interface, very low minority-carrier lifetimes, and high series resistance that diverges at low temperature. These findings help identify the key areas for improvement of these CZTSSe cells in the quest for a high-performance indium- and tellurium-free solar cell.

  14. A universal counting of black hole microstates in AdS4

    Science.gov (United States)

    Azzurli, Francesco; Bobev, Nikolay; Crichigno, P. Marcos; Min, Vincent S.; Zaffaroni, Alberto

    2018-02-01

    Many three-dimensional N=2 SCFTs admit a universal partial topological twist when placed on hyperbolic Riemann surfaces. We exploit this fact to derive a universal formula which relates the planar limit of the topologically twisted index of these SCFTs and their three-sphere partition function. We then utilize this to account for the entropy of a large class of supersymmetric asymptotically AdS4 magnetically charged black holes in M-theory and massive type IIA string theory. In this context we also discuss novel AdS2 solutions of eleven-dimensional supergravity which describe the near horizon region of large new families of supersymmetric black holes arising from M2-branes wrapping Riemann surfaces.

  15. Optimization study for the experimental configuration of CMB-S4

    Science.gov (United States)

    Barron, Darcy; Chinone, Yuji; Kusaka, Akito; Borril, Julian; Errard, Josquin; Feeney, Stephen; Ferraro, Simone; Keskitalo, Reijo; Lee, Adrian T.; Roe, Natalie A.; Sherwin, Blake D.; Suzuki, Aritoki

    2018-02-01

    The CMB Stage 4 (CMB-S4) experiment is a next-generation, ground-based experiment that will measure the cosmic microwave background (CMB) polarization to unprecedented accuracy, probing the signature of inflation, the nature of cosmic neutrinos, relativistic thermal relics in the early universe, and the evolution of the universe. CMB-S4 will consist of O(500,000) photon-noise-limited detectors that cover a wide range of angular scales in order to probe the cosmological signatures from both the early and late universe. It will measure a wide range of microwave frequencies to cleanly separate the CMB signals from galactic and extra-galactic foregrounds. To advance the progress towards designing the instrument for CMB-S4, we have established a framework to optimize the instrumental configuration to maximize its scientific output. The framework combines cost and instrumental models with a cosmology forecasting tool, and evaluates the scientific sensitivity as a function of various instrumental parameters. The cost model also allows us to perform the analysis under a fixed-cost constraint, optimizing for the scientific output of the experiment given finite resources. In this paper, we report our first results from this framework, using simplified instrumental and cost models. We have primarily studied two classes of instrumental configurations: arrays of large-aperture telescopes with diameters ranging from 2–10 m, and hybrid arrays that combine small-aperture telescopes (0.5-m diameter) with large-aperture telescopes. We explore performance as a function of telescope aperture size, distribution of the detectors into different microwave frequencies, survey strategy and survey area, low-frequency noise performance, and balance between small and large aperture telescopes for hybrid configurations. Both types of configurations must cover both large (~ degree) and small (~ arcmin) angular scales, and the performance depends on assumptions for performance vs. angular scale

  16. I/asterisk/ /6s 4P/ collisional quenching - Application to the IF 491-nm laser

    Science.gov (United States)

    Hutchison, S. B.; Verdeyen, J. T.; Eden, J. G.

    1981-01-01

    Measurements of the rate constants for quenching of the excited I (6s 4P) states by Ar, Xe, CF39I, UF6, and NF3 are described. Each rate constant is determined by recording the exponential time decay of the excited IF or excited I2 (342 nm) fluorescence in the afterglow of the e-beam-excited plasmas containing Ar, CF3I, NF3, and the desired quenching gas. In addition, further experimental evidence in support of neutral channel formation of excited IF in e-beam-pumped Ar/CF3I/NF3 mixtures is presented. Details of the experimental apparatus and gas handling procedures are given, and the kinetics model developed to interpret the experimental data is described.

  17. In vitro and in vivo characteristics of [iodine-125] 3-(R)-quinuclidinyl (S)-4-iodobenzilate

    International Nuclear Information System (INIS)

    Gibson, R.E.; Schneidau, T.A.; Cohen, V.I.; Sood, V.; Ruch, J.; Melograna, J.; Eckelman, W.C.; Reba, R.C.

    1989-01-01

    The radioiodinated muscarinic acetylcholine receptor antagonist, [ 125 I] 3-quinuclidinyl 4-iodobenzilate, has two high affinity diastereomeric forms, the (R,R) and (R,S)-isomers. The (R,S)-diastereomer is only threefold lower in affinity than the (R,R)-isomer, but the kinetic properties are considerably different--the dissociation rate constant is 13-fold faster for the (R,S)-isomer and the association rate constant is two to threefold faster. The calculated affinity is therefore only fourfold lower. In vivo, the clearance of (R,S)-4IQNB from receptor-rich tissue is also more rapid than that of the (R,R)-isomer, that is a reflection of the more rapid in vitro kinetic properties since the physicochemical properties and the metabolic clearance of the diastereomers is the same

  18. Electrical effects associated with the ordering process in CdInGaS4 crystals. 1

    International Nuclear Information System (INIS)

    Manolikas, C.; Anagnostopoulos, A.N.

    1983-01-01

    The structure and the domain structure of the ordered phase in the quaternary compound CdInGaS 4 are examined by using electron microscopy and the electron diffraction methods. It is found that a long-period APBs superstructure is formed after a long time of annealing at about 450 0 C and its origin is discussed on the basis of the assumption that mixing of Cd and Ga cations occurs within the layers of tetrahedral interstices. Heating of the former superstructure leads to disordering. Initially the periodic arrangement of the APBs is disordered; the ordering of the cations is conserved however. At even higher temperature the disordering is extended over the cations themselves as well. (author)

  19. The Interplay Between GUT and Flavour Symmetries in a Pati-Salam x S4 Model

    CERN Document Server

    de Adelhart Toorop, Reinier; Merlo, Luca

    2010-01-01

    Both Grand Unified symmetries and discrete flavour symmetries are appealing ways to describe apparent structures in the gauge and flavour sectors of the Standard Model. Both symmetries put constraints on the high energy behaviour of the theory. This can give rise to unexpected interplay when building models that possess both symmetries. We investigate on the possibility to combine a Pati-Salam model with the discrete flavour symmetry $S_4$ that gives rise to quark-lepton complementarity. Under appropriate assumptions at the GUT scale, the model reproduces fermion masses and mixings both in the quark and in the lepton sectors. We show that in particular the Higgs sector and the running Yukawa couplings are strongly affected by the combined constraints of the Grand Unified and family symmetries. This in turn reduces the phenomenologically viable parameter space, with high energy mass scales confined to a small region and some parameters in the neutrino sector slightly unnatural. In the allowed regions, we can r...

  20. Investigation of photoelectronic processes in CdIn2S4 by photoinduced current transient spectroscopy

    International Nuclear Information System (INIS)

    Serpi, A.

    1986-01-01

    Photoelectronic processes in CdIn 2 S 4 are investigated by four-gate photoinduced current transient spectroscopy. In general the photocurrent decay transients are non-exponential because of a nonlinear multichannel recombination mechanism. Nevertheless suitable extrinsic excitation allows to open one recombination channel only and so to evidence a purely exponential relaxation. The detailed analysis of this process leads to the interpretation that the defects associated with the energy levels continuously distributed below the conduction band act as relay centres for radiative recombination of photoelectrons rather than as thermal emitting traps. An electron trapping level located at about 0.6 eV from the bottom of the conduction band is also evidenced. (author)

  1. Trimaximal TM1 neutrino mixing in S4 with spontaneous CP violation

    International Nuclear Information System (INIS)

    Luhn, Christoph

    2013-01-01

    The measurement of the reactor angle by the Daya Bay and RENO experiments in 2012 has ruled out the tri-bimaximal paradigm. Adopting an S 4 family symmetry, we propose direct models of the trimaximal type TM 1 in which the tri-bimaximal Klein symmetry of the neutrino sector is broken to a residual Z 2 symmetry. In such a scenario, the solar mixing angle is decreased compared to its tri-bimaximal value by about 1°, thus bringing it in excellent agreement with experimental observation. The atmospheric mixing angle, on the other hand, depends on the CP violating Dirac phase δ. Imposing CP conservation in the family symmetry limit, we show how to break the CP symmetry via flavon VEVs with well-defined complex phases, so that sizable deviations of the atmospheric angle from maximal mixing, consistent with the latest global fits, are produced

  2. A Smart Voltage and Current Monitoring System for Three Phase Inverters Using an Android Smartphone Application.

    Science.gov (United States)

    Mnati, Mohannad Jabbar; Van den Bossche, Alex; Chisab, Raad Farhood

    2017-04-15

    In this paper, a new smart voltage and current monitoring system (SVCMS) technique is proposed. It monitors a three phase electrical system using an Arduino platform as a microcontroller to read the voltage and current from sensors and then wirelessly send the measured data to monitor the results using a new Android application. The integrated SVCMS design uses an Arduino Nano V3.0 as the microcontroller to measure the results from three voltage and three current sensors and then send this data, after calculation, to the Android smartphone device of an end user using Bluetooth HC-05. The Arduino Nano V3.0 controller and Bluetooth HC-05 are a cheap microcontroller and wireless device, respectively. The new Android smartphone application that monitors the voltage and current measurements uses the open source MIT App Inventor 2 software. It allows for monitoring some elementary fundamental voltage power quality properties. An effort has been made to investigate what is possible using available off-the-shelf components and open source software.

  3. Minority carrier diffusion length extraction in Cu2ZnSn(Se,S)4 solar cells

    Science.gov (United States)

    Gokmen, Tayfun; Gunawan, Oki; Mitzi, David B.

    2013-09-01

    We report measurement of minority carrier diffusion length (Ld) for high performance Cu2ZnSn(S,Se)4 (CZTSSe) solar cells in comparison with analogous Cu(In,Ga)(S,Se)2 (CIGSSe) devices. Our Ld extraction method involves performing systematic measurements of the internal quantum efficiency combined with separate capacitance-voltage measurement. This method also enables the measurement of the absorption coefficient of the absorber material as a function of wavelength in a finished device. The extracted values of Ld for CZTSSe samples are at least factor of 2 smaller than those for CIGSSe samples. Combined with minority carrier lifetime (τ) data measured by time-resolved photoluminescence, we deduce the minority carrier mobility (μe), which is also relatively low for the CZTSSe samples.

  4. In situ growth of NiCo(2)S(4) nanosheets on graphene for high-performance supercapacitors.

    Science.gov (United States)

    Peng, Shengjie; Li, Linlin; Li, Chengchao; Tan, Huiteng; Cai, Ren; Yu, Hong; Mhaisalkar, Subodh; Srinivasan, Madhavi; Ramakrishna, Seeram; Yan, Qingyu

    2013-10-03

    We demonstrate a facile hydrothermal method for growth of ultrathin NiCo2S4 nanosheets on reduced graphene oxide (RGO), which exhibit remarkable electrochemical performance with higher capacitance and longer cycle life than the bare NiCo2S4 hollow spheres (HSs).

  5. 26 CFR 1.6050S-4 - Information reporting for payments of interest on qualified education loans.

    Science.gov (United States)

    2010-04-01

    ... on qualified education loans. 1.6050S-4 Section 1.6050S-4 Internal Revenue INTERNAL REVENUE SERVICE... Information reporting for payments of interest on qualified education loans. (a) Electronic furnishing of... payments of interest on qualified education loans (furnisher) to the individual to whom it is required to...

  6. Facile preparation and visible light photocatalytic activity of CdIn2S4 monodispersed spherical particles

    International Nuclear Information System (INIS)

    Mu Jin; Wei Qinglian; Yao Pingping; Zhao Xueling; Kang Shizhao; Li Xiangqing

    2012-01-01

    Highlights: ► CdIn 2 S 4 monodispersed spherical particles were prepared by a soft solution method. ► Mercaptoacetic acid was used as capping agent to hinder the fast crystal growth. ► Thioacetamide as sulfur source resulted in the slow growth of particles. ► CdIn 2 S 4 spheres showed high visible light photocatalytic activity. - Abstract: We developed a facile method to prepare CdIn 2 S 4 monodispersed spherical particles by using mercaptoacetic acid as capping agent and thioacetamide as sulfur source. The results indicated that the size and morphology of CdIn 2 S 4 particles were related to reaction time. The CdIn 2 S 4 spherical particles with an average size of about 236 nm and a narrow size distribution were formed after reacting for 7 h. The photocatalytic activity of as-synthesized CdIn 2 S 4 spherical particles was evaluated by the photocatalytic degradation of methyl orange under visible light illumination. The results showed that the photocatalytic activity increased with prolonging reaction time in the preparation of CdIn 2 S 4 spherical particles. The CdIn 2 S 4 spherical particles prepared after reacting for 7 h exhibited a 98% degradation efficiency of methyl orange after 15 min visible light irradiation.

  7. Synchronous separation, seaming, sealing and sterilization (S4) using brazing for sample containerization and planetary protection

    Science.gov (United States)

    Bar-Cohen, Yoseph; Badescu, Mircea; Sherrit, Stewart; Bao, Xiaoqi; Lindsey, Cameron; Kutzer, Thomas; Salazar, Eduardo

    2018-03-01

    The return of samples back to Earth in future missions would require protection of our planet from the risk of bringing uncontrolled biological materials back with the samples. This protection would require "breaking the chain of contact (BTC)", where any returned material reaching Earth for further analysis would have to be sealed inside a container with extremely high confidence. Therefore, the acquired samples would need to be contained while destroying any potential biological materials that may contaminate the external surface of the container. A novel process that could be used to contain returning samples has been developed and demonstrated in a quarter scale size. The process consists of brazing using non-contact induction heating that synchronously separates, seams, seals and sterilizes (S4) the container. The use of brazing involves melting at temperatures higher than 500°C and this level of heating assures sterilization of the exposed areas since all carbon bonds (namely, organic materials) are broken at this temperature. The mechanism consists of a double wall container with inner and outer shells having Earth-clean interior surfaces. The process consists of two-steps, Step-1: the double wall container halves are fabricated and brazed (equivalent to production on Earth); and Step-2 is the S4 process and it is the equivalent to the execution on-orbit around Mars. In a potential future mission, the double wall container would be split into two halves and prepared on Earth. The potential on-orbit execution would consist of inserting the orbiting sample (OS) container into one of the halves and then mated to the other half and brazed. The latest results of this effort will be described and discussed in this manuscript.

  8. Power conditioning using dynamic voltage restorers under different voltage sag types.

    Science.gov (United States)

    Saeed, Ahmed M; Abdel Aleem, Shady H E; Ibrahim, Ahmed M; Balci, Murat E; El-Zahab, Essam E A

    2016-01-01

    Voltage sags can be symmetrical or unsymmetrical depending on the causes of the sag. At the present time, one of the most common procedures for mitigating voltage sags is by the use of dynamic voltage restorers (DVRs). By definition, a DVR is a controlled voltage source inserted between the network and a sensitive load through a booster transformer injecting voltage into the network in order to correct any disturbance affecting a sensitive load voltage. In this paper, modelling of DVR for voltage correction using MatLab software is presented. The performance of the device under different voltage sag types is described, where the voltage sag types are introduced using the different types of short-circuit faults included in the environment of the MatLab/Simulink package. The robustness of the proposed device is evaluated using the common voltage sag indices, while taking into account voltage and current unbalance percentages, where maintaining the total harmonic distortion percentage of the load voltage within a specified range is desired. Finally, several simulation results are shown in order to highlight that the DVR is capable of effective correction of the voltage sag while minimizing the grid voltage unbalance and distortion, regardless of the fault type.

  9. Low-Cost Open-Source Voltage and Current Monitor for Gas Metal Arc Weld 3D Printing

    Directory of Open Access Journals (Sweden)

    A. Pinar

    2015-01-01

    Full Text Available Arduino open-source microcontrollers are well known in sensor applications for scientific equipment and for controlling RepRap 3D printers. Recently low-cost open-source gas metal arc weld (GMAW RepRap 3D printers have been developed. The entry-level welders used have minimal controls and therefore lack any real-time measurement of welder voltage or current. The preliminary work on process optimization of GMAW 3D printers requires a low-cost sensor and data logger system to measure welder current and voltage. This paper reports on the development of a low-cost open-source power measurement sensor system based on Arduino architecture. The sensor system was designed, built, and tested with two entry-level MIG welders. The full bill of materials and open source designs are provided. Voltage and current were measured while making stepwise adjustments to the manual voltage setting on the welder. Three conditions were tested while welding with steel and aluminum wire on steel substrates to assess the role of electrode material, shield gas, and welding velocity. The results showed that the open source sensor circuit performed as designed and could be constructed for <$100 in components representing a significant potential value through lateral scaling and replication in the 3D printing community.

  10. Fabrication and characterization of nanostructured Fe3S4, an isostructural compound of half-metallic Fe3O4

    KAUST Repository

    Li, Peng

    2015-06-10

    High-purity, well-crystallized spinel Fe3S4 nanoplatelets were synthesized by the hydrothermal method, and the saturation magnetic moment of Fe3S4 was measured at 1.83 μB/f.u. The temperature-dependent resistivity of Fe3S4 was metallic-like for T < 180 K: room-temperature resistivity was measured at 7.711 × 103  μΩ cm. The anomalous Hall conductivity of Fe3S4 decreased with increasing longitudinal conductivity, in sharp contrast with the accepted theory of the anomalous Hall effect in a dirty-metal regime. Furthermore, negligible spin-dependent magnetoresistance was observed. Band structure calculations confirmed our experimental observations that Fe3S4 is a metal and not a half metal as expected.

  11. Extended Stable Boundary of LCL-Filtered Grid-Connected Inverter Based on An Improved Grid-Voltage Feedforward Control

    DEFF Research Database (Denmark)

    Lu, Minghui; Xin, Zhen; Wang, Xiongfei

    2016-01-01

    should be designed under one-sixth of sampling frequency. However, the low resonance frequency leads to a comparatively large filter inductance or/and capacitance. To extend the stable boundary to the region above fs/6, this paper proposes a novel voltage feedforward scheme for the LCL-filtered inverter....... Theoretical analysis is then provided to validate its feasibility and stability. Compared to other widely used active damping strategies, no extra sensors are needed because the filter capacitor voltage, which is used for voltage feedforward control, is also sampled for phase-locked loop in this paper...

  12. A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics.

    Science.gov (United States)

    Huang, Haiyun; Wang, Dejun; Xu, Yue

    2015-10-27

    This paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW.

  13. Acoustic Detection Of Loose Particles In Pressure Sensors

    Science.gov (United States)

    Kwok, Lloyd C.

    1995-01-01

    Particle-impact-noise-detector (PIND) apparatus used in conjunction with computer program analyzing output of apparatus to detect extraneous particles trapped in pressure sensors. PIND tester essentially shaker equipped with microphone measuring noise in pressure sensor or other object being shaken. Shaker applies controlled vibration. Output of microphone recorded and expressed in terms of voltage, yielding history of noise subsequently processed by computer program. Data taken at sampling rate sufficiently high to enable identification of all impacts of particles on sensor diaphragm and on inner surfaces of sensor cavities.

  14. High voltage load resistor array

    Science.gov (United States)

    Lehmann, Monty Ray [Smithfield, VA

    2005-01-18

    A high voltage resistor comprising an array of a plurality of parallel electrically connected resistor elements each containing a resistive solution, attached at each end thereof to an end plate, and about the circumference of each of the end plates, a corona reduction ring. Each of the resistor elements comprises an insulating tube having an electrode inserted into each end thereof and held in position by one or more hose clamps about the outer periphery of the insulating tube. According to a preferred embodiment, the electrode is fabricated from stainless steel and has a mushroom shape at one end, that inserted into the tube, and a flat end for engagement with the end plates that provides connection of the resistor array and with a load.

  15. PENGEMBANGAN ALAT PRAKTIKUM VISKOMETER METODE BOLA JATUH BEBAS BERBASIS SENSOR EFEK HALL UGN3503 SEBAGAI MEDIA PEMBELAJARAN FISIKA

    OpenAIRE

    Ramadhan, Diajeng; Serevina, Vina; Raihanati, Raihanati

    2016-01-01

    This research aims to develop learning media in the form of practical tool viscometer to measure the viscosity of the fluid using the method ball free fall to utilize hall effect sensor UGN3503 as detection sensor iron ball as it passes through the fluid and causes the magnetic field of the sensor is changed because the sensor is blocked by a magnetic iron ball, the magnitude magnetic field strength by a hall effect sensor changed into electrical quantities such as voltage output. The voltage...

  16. Visible light responsive Cu2MoS4 nanosheets incorporated reduced graphene oxide for efficient degradation of organic pollutant

    Science.gov (United States)

    Rameshbabu, R.; Vinoth, R.; Navaneethan, M.; Harish, S.; Hayakawa, Y.; Neppolian, B.

    2017-10-01

    Visible light active copper molybdenum sulfide (Cu2MoS4) nanosheets were successfully anchored on reduced graphene oxide (rGO) using facile hydrothermal method. During the hydrothermal reaction, reduction of graphene oxide into rGO and the formation of Cu2MoS4 nanosheets were successfully obtained. The charge transfer interaction between the rGO sheets and Cu2MoS4 nanosheets extended the absorption to visible region in comparison with bare Cu2MoS4 nanosheets i.e without rGO sheets. Furthermore, the notable photoluminescence quenching observed for Cu2MoS4/rGO nanocomposite revealed the effective role of rGO towards the significant inhibition of electron-hole pair recombination. The photocatalytic efficiencies of bare Cu2MoS4 and Cu2MoS4/rGO nanocomposite was evaluated for the degradation of methyl orange dye under visible irradiation (λ > 420 nm). A maximum photodegradation efficiency of 99% was achieved for Cu2MoS4/rGO nanocomposite, while only 64% photodegradation was noted for bare Cu2MoS4. The enhanced optical absorption in visible region, high surface area, and low charge carrier recombination in the presence of rGO sheets were the main reasons for the enhancement in photodegardation of MO dye. In addition, the resultant Cu2MoS4/rGO nanocomposite was found to be reusable for five successive cycles without significant loss in its photocatalytic performance.

  17. Nanostructurization effects in PVP-stabilized tetra-arsenic tetra-sulfide As_4S_4 nanocomposites

    International Nuclear Information System (INIS)

    Shpotyuk, O.; Bujňáková, Z.; Baláž, P.; Ingram, A.; Demchenko, P.; Kovalskiy, A.; Vlcek, M.; Shpotyuk, Ya.; Cebulski, J.; Dziedzic, A.

    2017-01-01

    Nanostructurization in three types of tetra-arsenic tetra-sulfide As_4S_4 polymorphs composed by (1) preferential β-As_4S_4, (2) realgar α-As_4S_4 and (3) admixture of As_4S_4 in the form of β-realgar, pararealgar and intermediate χ-phase subjected to mechanochemical ball milling in a water solution of polyvinylpyrrolidone (PVP) are characterized with multiexperimental structure-sensitive probes. Void structure of pelletized As_4S_4-PVP nanocomposites is probed by positron annihilation lifetime spectroscopy complemented with atomic-sensitive techniques such as X-ray powder diffraction, Raman scattering and scanning electron microscopy with energy-dispersive X-ray spectroscopy. Appearance of arsenolite As_2O_3 crystallites is character for all As_4S_4 polymorphs affected by wet milling. Positron annihilation lifetime data considered in terms of substitution positron-positronium trapping confirm complicated nature of nanocomposites. Modified x3-x2-coupling decomposition algorithm developed in addition to unconstrained x3-term fitting procedure is applied to parameterize annihilation channels in these nanocomposites. Interfacial free-volume voids between neighboring nanoparticles in PVP environment are defined as most favorable trapping sites, they being rather loosely composed by As_4S_4 crystallites in full respect to variety of crystallographic polymorphs used for milling. Detected annihilation channels are ascribed preferentially to intrinsic free-volume voids insensitive to trapping states at the surface of oxidized nanocomposites. - Highlights: • PVP-stabilized tetra-arsenic tetra-sulfide nanocomposites prepared by wet milling. • As_4S_4-PVP composites by complementary atomic-specific and deficient structure probes. • Surface oxidation due to crystalline arsenolite As_2O_3 under wet milling. • Free-volume structure of PVP-stabilized As_4S_4 nanocomposites by PAL spectroscopy. • x3-x2-coupling decomposition algorithm to treat PAL data for As_4S_4

  18. Effects of indium contents on photocatalytic performance of ZnIn_2S_4 for hydrogen evolution under visible light

    International Nuclear Information System (INIS)

    Song, Kelin; Zhu, Rongshu; Tian, Fei; Cao, Gang; Ouyang, Feng

    2015-01-01

    A series of ZnIn_xS_4_+_y (x=1.6, 2.0, 2.3, 2.6, 2.9, 3.1) photocatalysts were synthesized via a facile hydrothermal method and characterized by various analytical techniques, such as XRD, EDS, UV–vis DRS, SEM, TEM, BET and PL. The ZnIn_xS_4_+_y photocatalysts had a similar crystal structure. With the increase of indium content, the absorption edges of ZnIn_xS_4_+_y photocatalysts shifted to longer wavelength, their crystal sizes decreased firstly and then increased and the variation of the specific surface area and total pore volume was exactly opposite. Especially, when x=2.3, ZnIn_2_._3S_4_+_y catalyst had smallest crystal size, largest specific surface area and total pore volume. Additionally, the morphology of ZnIn_xS_4_+_y greatly depended on the contents of indium. The photocatalytic activity of ZnIn_xS_4_+_y was evaluated by photocatalytic hydrogen production from water under visible light. The ZnIn_2_._3S_4_+_y sample had the highest photocatalytic activity among these ZnIn_xS_4_+_y photocatalysts and its hydrogen production rate was 363 μmol/g h. - Graphical abstract: First, a series of catalysts were synthesized. And then those were characterized by various analytical techniques (such as SEM). finally, The photocatalytic activity of catalyst was evaluated by photocatalytic hydrogen production from water under visible light. - Highlights: • The photocatalytic property was studied upon visible-light irradiation. • ZnIn_xS_4_+_y photocatalysts show superior photocatalytic activity. • The catalyst of grain size, morphology and BET are related to indium content. • ZnIn_xS_4_+_y photocatalysts were synthesized via a facile hydrothermal method.

  19. Radiation sensor

    International Nuclear Information System (INIS)

    Brown, W.L.; Geronime, R.L.

    1977-01-01

    Radiation sensor and thermocouple, respectively, which can be used for reactor in-core instrumentation. The radiation sensor consists of an inconel conductor wire and rhodium emitter wire, the thermocouple of two intertwined alumel or chromel wires. Both are arranged in the center of a metal tube relative to which they are separated by an insulator made of SiO 2 fibers. This insulator is first introduced as a loose fabric between the radiation sensor and the thermocouple, respectively, and the metal tube and then compacted to a density of 35-73% of pure SiO 2 by drawing the tube. There is no need for soldering or welding. The insulation resistivity at room temperature ist between 10 14 and 10 15 ohms. (ORU) [de

  20. Water Sensors

    Science.gov (United States)

    1992-01-01

    Mike Morris, former Associate Director of STAC, formed pHish Doctor, Inc. to develop and sell a pH monitor for home aquariums. The monitor, or pHish Doctor, consists of a sensor strip and color chart that continually measures pH levels in an aquarium. This is important because when the level gets too high, ammonia excreted by fish is highly toxic; at low pH, bacteria that normally break down waste products stop functioning. Sales have run into the tens of thousands of dollars. A NASA Tech Brief Technical Support Package later led to a salt water version of the system and a DoE Small Business Innovation Research (SBIR) grant for development of a sensor for sea buoys. The company, now known as Ocean Optics, Inc., is currently studying the effects of carbon dioxide buildup as well as exploring other commercial applications for the fiber optic sensor.