Studying the noise parameters of thin-film silicon resistors

International Nuclear Information System (INIS)

Belogurov, S.V.; Gostilo, V.V.; Yurov, A.S.

1986-01-01

The results of studies on spectral density and energy noise equivalent of thin-film resistors on the base of amorphous silicon and KIM and KVM commercial high-ohmic resistors are presented. Dependence of the active part of impedance on frequency is shown to be the main source of redundant noise in resistors. Dependence of spectral density of noise voltage of current noises of silicon resistors on applied voltage is described by the formula S T =B V 2 /f 1.6 with the values B=(1.4-1.7)x10 -12 Hz 0.6 . As to noise parameters the silicon resistor is superior to commercial resistors

Improvement in the voltage grading (axial and radial) of the generator column of a Van de Graaf generator by the use of a resistor chain

International Nuclear Information System (INIS)

Prabhakar, B.R.

1977-01-01

It is well known that the use of a series of resistors, connected between the equipotential rings of a Van de Graaff generator, improves the axial voltage grading of the generator. The work reported in this paper shows how the resistor chain also improves the radial voltage gradient. The electrolytic field mapping technique was adopted in the present work. (Auth.)

Development of high voltage surge limiting resistor for protection of HV multiplier of 3 MeV DC accelerator

International Nuclear Information System (INIS)

Dewangan, S.; Sharma, D.K.; Bakhtsingh, R.I.

2013-01-01

A 3MeV, 10mA DC electron beam accelerator is in commissioning stages at EBC, Kharghar, Navi Mumbai. The accelerating potential of -3MV is generated by a Parallel Coupled Voltage Multiplier (PCVM) scheme using 74 stages of HV rectifier stacks in the 6 kg/cm 2 SF6 gas environment. The HV surges of order of 600kV, 42kA, 10ns is estimated across the rectifier stacks during sparking in the multiplier column. To limit the surge current and protect the rectifier diodes, a non inductive thick film surge limiting resistor (SLR) and protective spark gap is designed and developed. The rectifier stacks with surge limiting resistors at both the ends and protective spark gap in parallel has been successfully tested in simulated surge condition at an impulse voltage of 212kVp, 150ns FWHM and surge energy of 200J, 10ms, 20kV at 6kg/cm 2 SF6 gas environment and found satisfactorily. Subsequently the HV multiplier was installed with this surge protection scheme and is being tested at 1.2 MeV level. This paper describes the design features and test results of the non-inductive surge limiting resistor. (author)

Capacitive divider for output voltage measurement of intense electron beam accelerator

International Nuclear Information System (INIS)

Ding Desheng; Yi Lingzhi; Yu Binxiong; Hong Zhiqiang; Liu Jinliang

2012-01-01

A kind of simple-mechanism, easy-disassembly self-integrating capacitive divider used for measuring diode output voltage of intense electron beam accelerator (IEBA) is developed. The structure of the capacitive divider is described, and the capacitance value of the capacitive divider is calculated by theoretical analysis and electromagnetic simulation. The dependence of measurement voltage on electrical parameters such as stray capacitance, earth capacitance of front resistance is obtained by PSpice simulation. Measured waveforms appear overshoot phenomenon when stray capacitance of front resistance is larger, and the wavefront will be affected when earth capacitance of front resistance is larger. The diode output voltage waveforms of intense electron beam accelerator, are measured by capacitive divider and calibrated by water resistance divider, which is accordance with that measured by a resistive divider, the division ratio is about 563007. The designed capacitive divider can be used to measure high-voltage pulse with 100 ns full width at half maximum. (authors)

30 CFR 77.801-1 - Grounding resistors; continuous current rating.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistors; continuous current rating... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.801-1 Grounding resistors; continuous current rating. The ground fault current rating of grounding resistors shall meet the “extended...

A novel ZVS high voltage power supply for micro-channel plate photomultiplier tubes

International Nuclear Information System (INIS)

Pei, Chengquan; Tian, Jinshou; Liu, Zhen; Qin, Hong; Wu, Shengli

2017-01-01

A novel resonant high voltage power supply (HVPS) with zero voltage switching (ZVS), to reduce the voltage stress on switching devices and improve conversion efficiency, is proposed. The proposed HVPS includes a drive circuit, a transformer, several voltage multiplying circuits, and a regulator circuit. The HVPS contains several secondary windings that can be precisely regulated. The proposed HVPS performed better than the traditional resistor voltage divider, which requires replacing matching resistors resulting in resistor dispersibility in the Micro-Channel Plate (MCP). The equivalent circuit of the proposed HVPS was established and the operational principle analyzed. The entire switching element can achieve ZVS, which was validated by a simulation and experiments. The properties of this HVPS were tested including minimum power loss (240 mW), maximum power loss (1 W) and conversion efficiency (85%). The results of this research are that the proposed HVPS was suitable for driving the micro-channel plate photomultiplier tube (MCP-PMT). It was therefore adopted to test the MCP-PMT, which will be used in Daya Bay reactor neutrino experiment II in China.

A novel ZVS high voltage power supply for micro-channel plate photomultiplier tubes

Energy Technology Data Exchange (ETDEWEB)

Pei, Chengquan [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’an 710049 (China); Tian, Jinshou [Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi' an 710119 (China); Liu, Zhen [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’an 710049 (China); Qin, Hong [School of Computer Science and Technology, Xi' an University of Science and Technology, Xi' an 710054 (China); Wu, Shengli, E-mail: slwu@mail.xjtu.edu.cn [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’an 710049 (China)

2017-04-11

A novel resonant high voltage power supply (HVPS) with zero voltage switching (ZVS), to reduce the voltage stress on switching devices and improve conversion efficiency, is proposed. The proposed HVPS includes a drive circuit, a transformer, several voltage multiplying circuits, and a regulator circuit. The HVPS contains several secondary windings that can be precisely regulated. The proposed HVPS performed better than the traditional resistor voltage divider, which requires replacing matching resistors resulting in resistor dispersibility in the Micro-Channel Plate (MCP). The equivalent circuit of the proposed HVPS was established and the operational principle analyzed. The entire switching element can achieve ZVS, which was validated by a simulation and experiments. The properties of this HVPS were tested including minimum power loss (240 mW), maximum power loss (1 W) and conversion efficiency (85%). The results of this research are that the proposed HVPS was suitable for driving the micro-channel plate photomultiplier tube (MCP-PMT). It was therefore adopted to test the MCP-PMT, which will be used in Daya Bay reactor neutrino experiment II in China.

Development of resistor assemblies at 14 UD pelletron accelerator facility BARC-TIFR, Mumbai

International Nuclear Information System (INIS)

Ramlal; Ekambaram, M.; Matkar, U.V.; Lokare, R.N.; Gore, J.A.; Tambwekar, V.V.; Kulkarni, S.G.; Gupta, A.K.; Bhagwat, P.V.; Kailas, S.; Karande, J.N.; Kurup, M.B.

2002-01-01

An important consideration in high voltage design of an electrostatic accelerator is the potential grading system used to divide the terminal potential equitably (or as required) across the column or tube electrode gaps. This is generally accomplished by tapping the electrode potentials from across a resistor-chain or from a series of corona gaps as in the Pelletron Accelerator. However, each potential grading system has its own set of advantages and disadvantages

Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.

Science.gov (United States)

Kim, Wonjae; Riikonen, Juha; Li, Changfeng; Chen, Ya; Lipsanen, Harri

2013-10-04

Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low VDD. Controllable characteristics also allow the compensation of variation in the unintentional doping typically observed in CVD graphene. Moreover, both p-n and n-p configurations of FETs can be achieved by electrostatic doping using the local back-gate. Therefore, the device operation can also be switched from inverter to voltage controlled resistor, opening new possibilities in using graphene in logic circuitry.

Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film

Science.gov (United States)

Zhang, Shumao; Kuo, Yue

2018-03-01

Electrical properties of nano-sized resistors made from the breakdown of the metal-oxide-semiconductor capacitor composed of the amorphous high-k gate dielectric have been investigated under different stress voltages and temperatures. The effective resistance of nano-resistors in the device was estimated from the I-V curve in the high voltage range. It decreased with the increase of the number of resistors. The resistance showed complicated temperature dependence, i.e. it neither behaves like a conductor nor a semiconductor. In the low voltage operation range, the charge transfer was controlled by the Schottky barrier at the nano-resistor/Si interface. The barrier height decreased with the increase of stress voltage, which was probably caused by the change of the nano-resistor composition. Separately, it was observed that the barrier height was dependent on the temperature, which was probably due to the dynamic nano-resistor formation process and the inhomogeneous barrier height distribution. The unique electrical characteristics of this new type of nano-resistors are important for many electronic and optoelectronic applications.

Resistors Improve Ramp Linearity

Science.gov (United States)

Kleinberg, L. L.

1982-01-01

Simple modification to bootstrap ramp generator gives more linear output over longer sweep times. New circuit adds just two resistors, one of which is adjustable. Modification cancels nonlinearities due to variations in load on charging capacitor and due to changes in charging current as the voltage across capacitor increases.

Model of 1/f noise in ion implanted resistors as a function of the resistance, determined by a reverse bias voltage

International Nuclear Information System (INIS)

Beck, H.G.E.

1979-01-01

A model is presented for the 1/f noise in ion-implanted resistors. The resistance was changed by a reverse bias voltage. The model explains the experimentally found square dependence between the relative 1/f noise intensity C/C 0 and the relative change in resistance R/R 0 . (author)

The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider.

Science.gov (United States)

Garnacho, Fernando; Khamlichi, Abderrahim; Rovira, Jorge

2017-11-17

The most important advantage of voltage dividers over traditional voltage transformers is that voltage dividers do not have an iron core with non-linear hysteresis characteristics. The voltage dividers have a linear behavior with respect to over-voltages and a flat frequency response larger frequency range. The weak point of a voltage divider is the influence of external high-voltage (HV) and earth parts in its vicinity. Electrical fields arising from high voltages in neighboring phases and from ground conductors and structures are one of their main sources for systematic measurement errors. This paper describes a shielding voltage divider for a 24 kV medium voltage network insulated in SF6 composed of two resistive-capacitive dividers, one integrated within the other, achieving a flat frequency response up to 10 kHz for ratio error and up to 5 kHz for phase displacement error. The metal shielding improves its immunity against electric and magnetic fields. The characterization performed on the built-in voltage sensor shows an accuracy class of 0.2 for a frequency range from 20 Hz to 5 kHz and a class of 0.5 for 1 Hz up to 20 Hz. A low temperature effect is also achieved for operation conditions of MV power grids.

A novel pseudo resistor structure for biomedical front-end amplifiers.

Science.gov (United States)

Yu-Chieh Huang; Tzu-Sen Yang; Shun-Hsi Hsu; Xin-Zhuang Chen; Jin-Chern Chiou

2015-08-01

This study proposes a novel pseudo resistor structure with a tunable DC bias voltage for biomedical front-end amplifiers (FEAs). In the proposed FEA, the high-pass filter composed of differential difference amplifier and a pseudo resistor is implemented. The FEA is manufactured by using a standard TSMC 0.35 μm CMOS process. In this study, three types FEAs included three different pseudo resistor are simulated, fabricated and measured for comparison and electrocorticography (ECoG) measurement, and all the results show the proposed pseudo resistor is superior to other two types in bandwidth. In chip implementation, the lower and upper cutoff frequencies of the high-pass filter with the proposed pseudo resistor are 0.15 Hz and 4.98 KHz, respectively. It also demonstrates lower total harmonic distortion performance of -58 dB at 1 kHz and higher stability with wide supply range (1.8 V and 3.3 V) and control voltage range (0.9 V and 1.65 V) than others. Moreover, the FEA with the proposed pseudo successfully recorded spike-and-wave discharges of ECoG signal in in vivo experiment on rat with pentylenetetrazol-induced seizures.

Measurements of fuse and resistor characteristics for multi-megajoule capacitor bank application

International Nuclear Information System (INIS)

McDonald, K.F.; Smith, T.; Golden, J.; Conley, B.

1986-01-01

Experimental tests have been conducted on commercially available fuses and resistors under fast high voltage pulsed (10 μsec) conditions to determine their ability to protect capacitor bank components during faults. NRL's Modified Betatron Accelerator uses two multi-megajoule capacitor banks to power the toroidal and betatron magnetic field coils. The expensive high energy density capacitors in these banks must be protected from excessive peak current, voltage reversal, or charging beyond their electrical ratings in the occurrence of a fault. Adequate protection can be obtained with fuses and resistors in series with each parallel connected capacitor. The fuses must open reliably and hold off high voltage D.C. (10 - 20 kV), and the resistors must conduct high current and di/dt without failing from energy deposition or magnetic forces. The performance of the commercial fuses is well documented at low AC frequencies and currents (60 Hz/100 A) but data was not previously available for the fast high current pulsed conditions that prevail under actual fault conditions. A 20 kV 200 kJ, low inductance capacitor bank and ignitron switch were used to conduct the experiments. Peak currents in the fuses were approximately 170 kA at t - 6.5 μs. The final fuse hold-off voltage exceeded 8 kV. Currents in the resistors ranged from - 20 - 40 kA per resistor. The experimental results have been compared to the manufacturers data from minimum melt and maximum let-through and to exploding bridge wire computer models

NuMI proton kicker extraction magnet termination resistor system

Energy Technology Data Exchange (ETDEWEB)

Reeves, S.R.; Jensen, C.C.; /Fermilab

2005-05-01

The temperature stability of the kicker magnet termination resistor assembly directly affects the field flatness and amplitude stability. Comprehensive thermal enhancements were made to the existing Main Injector resistor assembly design to satisfy NuMI performance specifications. Additionally, a fluid-processing system utilizing Fluorinert{reg_sign} FC-77 high-voltage dielectric was built to precisely control the setpoint temperature of the resistor assembly from 70 to 120F, required to maintain constant resistance during changing operational modes. The Fluorinert{reg_sign} must be continually processed to remove hazardous breakdown products caused by radiation exposure to prevent chemical attack of system components. Design details of the termination resistor assembly and Fluorinert{reg_sign} processing system are described. Early performance results will be presented.

Calibration of the precision high voltage dividers of the KATRIN experiment

Energy Technology Data Exchange (ETDEWEB)

Rest, Oliver [Institut fuer Kernphysik, Westfaelische Wilhelms-Universitaet Muenster (Germany); Collaboration: KATRIN-Collaboration

2016-07-01

The KATRIN (KArlsruhe TRItium Neutrino) experiment will measure the endpoint region of the tritium β decay spectrum to determine the neutrino mass with a sensitivity of 200 meV/c{sup 2}. To achieve this sub-eV sensitivity the energy of the decay electrons will be analyzed using a MAC-E type spectrometer. The retarding potential of the MAC-E-filter (up to -35 kV) has to be monitored with a relative precision of 3 . 10{sup -6}. For this purpose the potential will be measured directly via two custom made precision high voltage dividers, which were developed and constructed in cooperation with the Physikalisch-Technische Bundesanstalt Braunschweig. In order to determine the absolute values and the stability of the scale factors of the voltage dividers, regular calibration measurements are essential. Such measurements have been performed during the last years using several different methods. The poster gives an overview of the methods and results of the calibration of the precision high voltage dividers.

Defect tolerance in resistor-logic demultiplexers for nanoelectronics.

Science.gov (United States)

Kuekes, Philip J; Robinett, Warren; Williams, R Stanley

2006-05-28

Since defect rates are expected to be high in nanocircuitry, we analyse the performance of resistor-based demultiplexers in the presence of defects. The defects observed to occur in fabricated nanoscale crossbars are stuck-open, stuck-closed, stuck-short, broken-wire, and adjacent-wire-short defects. We analyse the distribution of voltages on the nanowire output lines of a resistor-logic demultiplexer, based on an arbitrary constant-weight code, when defects occur. These analyses show that resistor-logic demultiplexers can tolerate small numbers of stuck-closed, stuck-open, and broken-wire defects on individual nanowires, at the cost of some degradation in the circuit's worst-case voltage margin. For stuck-short and adjacent-wire-short defects, and for nanowires with too many defects of the other types, the demultiplexer can still achieve error-free performance, but with a smaller set of output lines. This design thus has two layers of defect tolerance: the coding layer improves the yield of usable output lines, and an avoidance layer guarantees that error-free performance is achieved.

Elimination of voltage reversal in multiple membrane electrode assembly installed microbial fuel cells (mMEA-MFCs) stacking system by resistor control.

Science.gov (United States)

Kim, Bongkyu; Chang, In Seop

2018-08-01

Voltage reversal (VR) in series connection of multiple membrane electrode assembly installed microbial fuel cells (mMEA-MFC) is eliminated by manipulating the resistor control. Discharge test results collected from two mMEA-MFCs initially operated (designated as P1 and P2) confirm that the performance of P2 exceeds that of P1. Thus, driving P1 and P2 as serially stacked MFCs generate the VR in P1. Controlling the inserted resistor adjust the current production of P2 to maintain balance with P1, and the VR in P1 is eliminated in the operation of stacking mode. Thus, manipulating the internal resistance provide an applicable approach to suppress VR in the stacking of mMEA-MFCs system. Copyright © 2018 Elsevier Ltd. All rights reserved.

The Sponge Resistor Model--A Hydrodynamic Analog to Illustrate Ohm's Law, the Resistor Equation R=?l/A, and Resistors in Series and Parallel

Science.gov (United States)

Pfister, Hans

2014-01-01

Physics students encountering electric circuits for the first time often ask why adding more resistors to a circuit sometimes increases and sometimes decreases the resulting total resistance. It appears that these students have an inadequate understanding of current flow and resistance. Students who do not adopt a model of current, voltage, and…

Irreversible entropy model for damage diagnosis in resistors

Energy Technology Data Exchange (ETDEWEB)

Cuadras, Angel, E-mail: angel.cuadras@upc.edu; Crisóstomo, Javier; Ovejas, Victoria J.; Quilez, Marcos [Instrumentation, Sensor and Interfaces Group, Electronic Engineering Department, Escola d' Enginyeria de Telecomunicació i Aeronàutica de Castelldefels EETAC, Universitat Politècnica de Catalunya, Barcelona Tech (UPC), Castelldefels-Barcelona (Spain)

2015-10-28

We propose a method to characterize electrical resistor damage based on entropy measurements. Irreversible entropy and the rate at which it is generated are more convenient parameters than resistance for describing damage because they are essentially positive in virtue of the second law of thermodynamics, whereas resistance may increase or decrease depending on the degradation mechanism. Commercial resistors were tested in order to characterize the damage induced by power surges. Resistors were biased with constant and pulsed voltage signals, leading to power dissipation in the range of 4–8 W, which is well above the 0.25 W nominal power to initiate failure. Entropy was inferred from the added power and temperature evolution. A model is proposed to understand the relationship among resistance, entropy, and damage. The power surge dissipates into heat (Joule effect) and damages the resistor. The results show a correlation between entropy generation rate and resistor failure. We conclude that damage can be conveniently assessed from irreversible entropy generation. Our results for resistors can be easily extrapolated to other systems or machines that can be modeled based on their resistance.

Irreversible entropy model for damage diagnosis in resistors

International Nuclear Information System (INIS)

Cuadras, Angel; Crisóstomo, Javier; Ovejas, Victoria J.; Quilez, Marcos

2015-01-01

We propose a method to characterize electrical resistor damage based on entropy measurements. Irreversible entropy and the rate at which it is generated are more convenient parameters than resistance for describing damage because they are essentially positive in virtue of the second law of thermodynamics, whereas resistance may increase or decrease depending on the degradation mechanism. Commercial resistors were tested in order to characterize the damage induced by power surges. Resistors were biased with constant and pulsed voltage signals, leading to power dissipation in the range of 4–8 W, which is well above the 0.25 W nominal power to initiate failure. Entropy was inferred from the added power and temperature evolution. A model is proposed to understand the relationship among resistance, entropy, and damage. The power surge dissipates into heat (Joule effect) and damages the resistor. The results show a correlation between entropy generation rate and resistor failure. We conclude that damage can be conveniently assessed from irreversible entropy generation. Our results for resistors can be easily extrapolated to other systems or machines that can be modeled based on their resistance

30 CFR 75.801 - Grounding resistors.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistors. 75.801 Section 75.801 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.801 Grounding...

Modular high voltage power supply for chemical analysis

Science.gov (United States)

Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

2008-07-15

A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

Comparison of boron and neon damage effects in boron ion-implanted resistors

International Nuclear Information System (INIS)

MacIver, B.A.

1975-01-01

Boron and neon damage implants were used in fabricating integrated-circuit resistors in silicon. Resistor properties were studied as functions of damaging ion species and dose. Sheet resistances in the 10 000 Ω/square range were obtained with low temperature and voltage sensitivities and d.c. isolation. (author)

The high voltage divider - a tool for comparison of measurement equipment in diagnostic radiology

International Nuclear Information System (INIS)

Slavchev, A.; Litchev, A.; Constantinov, B.

2004-01-01

The high voltage divider (HVD) is designed for control and analysis of the characteristics of the X-ray generator. The low voltage analogous signals produced by the divider are proportional to the high voltage (kVp) applied to the x-ray tube by a ratio 1:1000 or 1:10000 and can be measured with external test devices like storage oscilloscope (or digital multimeter). The exposure duration and the wave form may be visualized, too. Apart of this invasive way the high voltage also may be measured non-invasively by means of appropriate devices as well as indirectly through calculations. Since the invasive method of measurement with the high voltage divider is distinguished by a high accuracy, it may be utilized as an effective tool for calibration of different devices and for comparison of the measurement methods. (authors)

Split-cross-bridge resistor for testing for proper fabrication of integrated circuits

Science.gov (United States)

Buehler, M. G. (Inventor)

1985-01-01

An electrical testing structure and method is described whereby a test structure is fabricated on a large scale integrated circuit wafer along with the circuit components and has a van der Pauw cross resistor in conjunction with a bridge resistor and a split bridge resistor, the latter having two channels each a line width wide, corresponding to the line width of the wafer circuit components, and with the two channels separated by a space equal to the line spacing of the wafer circuit components. The testing structure has associated voltage and current contact pads arranged in a two by four array for conveniently passing currents through the test structure and measuring voltages at appropriate points to calculate the sheet resistance, line width, line spacing, and line pitch of the circuit components on the wafer electrically.

Characteristics of burden resistors for high-precision DC current transducers

CERN Document Server

Fernqvist, G; Hudson, G; Pickering, J

2007-01-01

The DC current transducer (DCCT) and accompanying A/D converter determine the precision of a power converter in accelerator operation. In the LHC context this precision approaches 10-6 (1 ppm). Inside the DCCT a burden resistor is used to convert the current to an output voltage. The performance of this resistor is crucial for the accuracy, temperature behaviour, settling time and longterm drift of the DCCT. This paper reports on evaluations, a new parameter called â€ﾜpower coefficient” (PC) and test results from some different types of resistors available on the market.

Alternative power supply and dump resistor connections for similar, mutually coupled, superconducting coils

International Nuclear Information System (INIS)

Owen, E.W.; Shimer, W.; Wang, S.T.

1983-01-01

Alternative methods of connecting similar mutually coupled coils to their power supplies and dump resistors are investigated. The circuits are evaluated for both operating and fault conditions. The factors considered are the voltage to ground during a dump, short circuits, open circuits, quenches, and failure of the protection system to detect a quench. Of particular interest are the currents induced in coils that remain superconducting when one or more coils quench. The alternative connections include combined power supplies, individual dump resistors, combined resistors and series and parallel dump resistors. A new circuit that contains ''coupling'' resistors is proposed. The coupling resistors do not affect normal fast dumps but reduce the peak induced currents while also reducing the energy rating of the dump resistors. Another novel circuit, the series circuit with diodes, is discussed. The MFTF-B central-cell solenoids are used as an example

Alternative power supply and dump resistor connections for similar, mutally coupled, superconducting coils

International Nuclear Information System (INIS)

Owen, E.W.; Shimer, D.W.; Wang, S.T.

1983-01-01

Alternative methods of connecting similar mutually coupled coils to their power supplies and dump resistors are investigated. The circuits are evaluated for both operating and fault conditions. The factors considered are the voltage to ground during a dump, short circuits, open circuits, quenches, and failure of the protection system to detect a quench. Of particular interest are the currents induced in coils that remain superconducting when one or more coils quench. The alternative connections include combined power supplies, individual dump resistors, combined resistors and series and parallel dump resistors. A new circuit that contains coupling resistors is proposed. The coupling resistors do not affect normal fast dumps but reduce the peak induced currents while also reducing the energy rating of the dump resistors. Another novel circuit, the series circuit with diodes, is discussed. The MFTF-B central-cell solenoids are used as an example

Modeling of three-dimensional diffusible resistors with the one-dimensional tube multiplexing method

International Nuclear Information System (INIS)

Gillet, Jean-Numa; Degorce, Jean-Yves; Meunier, Michel

2009-01-01

Electronic-behavior modeling of three-dimensional (3D) p + -π-p + and n + -ν-n + semiconducting diffusible devices with highly accurate resistances for the design of analog resistors, which are compatible with the CMOS (complementary-metal-oxide-semiconductor) technologies, is performed in three dimensions with the fast tube multiplexing method (TMM). The current–voltage (I–V) curve of a silicon device is usually computed with traditional device simulators of technology computer-aided design (TCAD) based on the finite-element method (FEM). However, for the design of 3D p + -π-p + and n + -ν-n + diffusible resistors, they show a high computational cost and convergence that may fail with fully non-separable 3D dopant concentration profiles as observed in many diffusible resistors resulting from laser trimming. These problems are avoided with the proposed TMM, which divides the 3D resistor into one-dimensional (1D) thin tubes with longitudinal axes following the main orientation of the average electrical field in the tubes. The I–V curve is rapidly obtained for a device with a realistic 3D dopant profile, since a system of three first-order ordinary differential equations has to be solved for each 1D multiplexed tube with the TMM instead of three second-order partial differential equations in the traditional TCADs. Simulations with the TMM are successfully compared to experimental results from silicon-based 3D resistors fabricated by laser-induced dopant diffusion in the gaps of MOSFETs (metal-oxide-semiconductor field-effect transistors) without initial gate. Using thin tubes with other shapes than parallelepipeds as ring segments with toroidal lateral surfaces, the TMM can be generalized to electronic devices with other types of 3D diffusible microstructures

A controllable resistor and its applications in pole-zero tracking frequency compensation methods for LDOs

Energy Technology Data Exchange (ETDEWEB)

Wang Yi; He Lenian; Ning Zhihua; Shao Yali, E-mail: wangyi@vlsi.zju.edu.c [Institute of VLSI Design, Zhejiang University, Hangzhou 310027 (China)

2009-09-15

This paper presents a controllable resistor, which is formed by a MOS-resistor working in the deep triangle region and an auxiliary circuit. The auxiliary circuit can generate the gate-source voltage which is proportional to the output current of an low dropout regulator for the MOS-resistor. Thus, the equivalent output resistance of the MOS-resistor is inversely proportional to the output current, which is a suitable feature for pole-zero tracking frequency compensation methods. By switching the type of the MOS-resistor and current direction through the auxiliary circuit, the controllable resistor can be suitable for different applications. Three pole-zero tracking frequency compensation methods based on a single Miller capacitor with nulling resistor, unit-gain compensation cell and pseudo-ESR (equivalent serial resistor of load capacitor) power stage have been realized by this controllable resistor. Their advantages and limitations are discussed and verified by simulation results.

A controllable resistor and its applications in pole-zero tracking frequency compensation methods for LDOs

International Nuclear Information System (INIS)

Wang Yi; He Lenian; Ning Zhihua; Shao Yali

2009-01-01

This paper presents a controllable resistor, which is formed by a MOS-resistor working in the deep triangle region and an auxiliary circuit. The auxiliary circuit can generate the gate-source voltage which is proportional to the output current of an low dropout regulator for the MOS-resistor. Thus, the equivalent output resistance of the MOS-resistor is inversely proportional to the output current, which is a suitable feature for pole-zero tracking frequency compensation methods. By switching the type of the MOS-resistor and current direction through the auxiliary circuit, the controllable resistor can be suitable for different applications. Three pole-zero tracking frequency compensation methods based on a single Miller capacitor with nulling resistor, unit-gain compensation cell and pseudo-ESR (equivalent serial resistor of load capacitor) power stage have been realized by this controllable resistor. Their advantages and limitations are discussed and verified by simulation results.

Diffraction phase microscopy imaging and multi-physics modeling of the nanoscale thermal expansion of a suspended resistor.

Science.gov (United States)

Wang, Xiaozhen; Lu, Tianjian; Yu, Xin; Jin, Jian-Ming; Goddard, Lynford L

2017-07-04

We studied the nanoscale thermal expansion of a suspended resistor both theoretically and experimentally and obtained consistent results. In the theoretical analysis, we used a three-dimensional coupled electrical-thermal-mechanical simulation and obtained the temperature and displacement field of the suspended resistor under a direct current (DC) input voltage. In the experiment, we recorded a sequence of images of the axial thermal expansion of the central bridge region of the suspended resistor at a rate of 1.8 frames/s by using epi-illumination diffraction phase microscopy (epi-DPM). This method accurately measured nanometer level relative height changes of the resistor in a temporally and spatially resolved manner. Upon application of a 2 V step in voltage, the resistor exhibited a steady-state increase in resistance of 1.14 Ω and in relative height of 3.5 nm, which agreed reasonably well with the predicted values of 1.08 Ω and 4.4 nm, respectively.

Suppression of the high-frequency disturbances in low-voltage circuits caused by disconnector operation in high-voltage open-air substations

Energy Technology Data Exchange (ETDEWEB)

Savic, M.S.

1986-07-01

The switching off and on of small capacitive currents charging busbar capacitances, connection conductors and open circuit breakers with disconnectors causes high-frequency transients in high-voltage networks. In low voltage circuits, these transient processes induce dangerous overvoltages for the electronic equipment in the substation. A modified construction of the disconnector with a damping resistor was investigated. Digital simulation of the transient process in a high-voltage network during the arcing period between the disconnector contacts with and without damping resistor were performed. A significant decrease of the arcing duration and the decrease of the electromagnetic field magnitude in the vicinity of the operating disconnector were noticed. In the low voltage circuit protected with the surge arrester, the overvoltage magnitude was not affected by the damping resistor due to the arrester protection effect.

Resistor holder

Science.gov (United States)

Broadhurst, John H.

1989-01-01

A resistor device for use with electrostatic particle accelerators includes a resistor element positioned within a tubular housing having a fixed end cap at one end thereof and a movable end cap at the other end thereof. The tubular housing, fixed end cap, and movable end cap serve as an electromagnetic field for the resistor element. Conductive disks engage opposite ends of the resistor element and concentrically position the resistor element within the tubular housing. Helical springs engage the conductive disks and the end caps to yieldably support the movable end caps and resistor element for yieldable axial movement relative to the tubular housing. An annular conducting ring is secured to the tubular housing and is spaced radially from the movable end cap and cooperates with the latter to define an annular spark gap.

Research for Forming up the Controlling Diagram Utilizing the Connection of a LV Resistor on Voltage Transformer’s Open-Triagle Coil to Reduce over Voltage Caused by Earth Fault in 6 kV Grid of QuangNinh Underground Mines

Directory of Open Access Journals (Sweden)

Viet Bun Ho

2018-01-01

Full Text Available Single phase earth-fault in MV grids usually causes overvoltage that harm to human being and electric equipment. If the magnitude of over voltage is so great, many grids’ eco-technical parameters will be affected. The paper analyzes all possible consequences of over voltage occurred in 6 kV grid of QuangNinh underground mines. Base on the analysis, a controlling diagram utilizing the connection of a LV resistor on voltage transformer’s open-triangle coil to reduce over voltage is recommended. The simulation results of the diagram are used to prove the effectiveness of solution: the over voltage magnitude is only in the range of (2,1–2,4.Uf. Other advantage that solution brings to relay system will be pointed out.

System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors

Science.gov (United States)

Harris, John Richardson; Caporaso, George J; Sampayan, Stephen E

2013-10-22

A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

Surface scattering mechanisms of tantalum nitride thin film resistor.

Science.gov (United States)

Chen, Huey-Ru; Chen, Ying-Chung; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Shih, Chih-Cheng; Chuang, Nai-Chuan; Wang, Kao-Yuan

2014-01-01

In this letter, we utilize an electrical analysis method to develop a TaN thin film resistor with a stricter spec and near-zero temperature coefficient of resistance (TCR) for car-used electronic applications. Simultaneously, we also propose a physical mechanism mode to explain the origin of near-zero TCR for the TaN thin film resistor (TFR). Through current fitting, the carrier conduction mechanism of the TaN TFR changes from hopping to surface scattering and finally to ohmic conduction for different TaN TFRs with different TaN microstructures. Experimental data of current-voltage measurement under successive increasing temperature confirm the conduction mechanism transition. A model of TaN grain boundary isolation ability is eventually proposed to influence the carrier transport in the TaN thin film resistor, which causes different current conduction mechanisms.

Module Seven: Combination Circuits and Voltage Dividers; Basic Electricity and Electronics Individualized Learning System.

Science.gov (United States)

Bureau of Naval Personnel, Washington, DC.

In this module the student will learn to apply the rules previously learned for series and parallel circuits to more complex circuits called series-parallel circuits, discover the utility of a common reference when making reference to voltage values, and learn how to obtain a required voltage from a voltage divider network. The module is divided…

Suppressing Thermal Energy Drift In The LLNL Flash X-Ray Accelerator Using Linear Disk Resistor Stacks

International Nuclear Information System (INIS)

Kreitzer, B.R.; Houck, T.L.; Luchterhand, O.C.

2011-01-01

This paper addresses thermal drift in sodium thiosulfate liquid resistors and their replacement with linear disk resistors from HVR Advanced Power Components. Sodium thiosulfate resistors in the FXR induction linear accelerator application have a temperature coefficient of ∼1.8%/C. The FXR Marx banks send an 8kJ pulse through eight 524 cm 3 liquid resistors at a repetition rate of up to 1 every 45 seconds. Every pulse increases the temperature of the solution by ∼0.4 C which produces a 0.7% change in resistance. The typical cooling rate is ∼0.4 C per minute which results in ∼0.1% energy drop per pulse during continuous pulsed operations. A radiographic accelerator is extraordinarily sensitive to energy variations. Changes in beam energy produce movement in beam transport, changes in spot size, and large dose variations. If self-heating were the only problem, we could predict the increase in input voltage required to compensate for the energy loss. However, there are other variables that influence the temperature of the resistors such as focus magnet heating, changes in room temperature, changes in cooling water, where the cell is located, etc. Additionally not all of the resistors have equivalent cooling rates and as many as 32 resistors are driven from a single power source. The FXR accelerator group elected to replace the sodium thiosulfate resistors with HVR Linear Disk Resistors in a stack type configuration. With data limited for these resistors when used in oil and at low resistance values, a full characterization needed to be performed. High currents (up to 15kA), high voltages (up to 400kV), and Fast Rise times (<10ns) made a resistor choice difficult. Other solid resistors have been tried and had problems at the connection points and with the fact that the resistivity changed as they absorbed oil. The selected HVR resistors have the advantage of being manufactured with the oil impregnated in to them so this characteristic is minimized while still

Suppressing Thermal Energy Drift In The LLNL Flash X-Ray Accelerator Using Linear Disk Resistor Stacks

Energy Technology Data Exchange (ETDEWEB)

Kreitzer, B R; Houck, T L; Luchterhand, O C

2011-07-19

This paper addresses thermal drift in sodium thiosulfate liquid resistors and their replacement with linear disk resistors from HVR Advanced Power Components. Sodium thiosulfate resistors in the FXR induction linear accelerator application have a temperature coefficient of {approx}1.8%/C. The FXR Marx banks send an 8kJ pulse through eight 524 cm{sup 3} liquid resistors at a repetition rate of up to 1 every 45 seconds. Every pulse increases the temperature of the solution by {approx}0.4 C which produces a 0.7% change in resistance. The typical cooling rate is {approx}0.4 C per minute which results in {approx}0.1% energy drop per pulse during continuous pulsed operations. A radiographic accelerator is extraordinarily sensitive to energy variations. Changes in beam energy produce movement in beam transport, changes in spot size, and large dose variations. If self-heating were the only problem, we could predict the increase in input voltage required to compensate for the energy loss. However, there are other variables that influence the temperature of the resistors such as focus magnet heating, changes in room temperature, changes in cooling water, where the cell is located, etc. Additionally not all of the resistors have equivalent cooling rates and as many as 32 resistors are driven from a single power source. The FXR accelerator group elected to replace the sodium thiosulfate resistors with HVR Linear Disk Resistors in a stack type configuration. With data limited for these resistors when used in oil and at low resistance values, a full characterization needed to be performed. High currents (up to 15kA), high voltages (up to 400kV), and Fast Rise times (<10ns) made a resistor choice difficult. Other solid resistors have been tried and had problems at the connection points and with the fact that the resistivity changed as they absorbed oil. The selected HVR resistors have the advantage of being manufactured with the oil impregnated in to them so this characteristic

Sizing of the Series Dynamic Breaking Resistor in a Doubly Fed Induction Generator Wind Turbine

DEFF Research Database (Denmark)

Soliman, Hammam; Wang, Huai; Zhou, Dao

2014-01-01

This paper investigates the effect of Series Dynamic Breaking Resistor (SDBR) sizing on a Doubly Fed Induction Generator (DFIG) based wind power conversion system. The boundary of the SDBR value is firstly derived by taking into account the controllability of the rotor side converter and the maxi......This paper investigates the effect of Series Dynamic Breaking Resistor (SDBR) sizing on a Doubly Fed Induction Generator (DFIG) based wind power conversion system. The boundary of the SDBR value is firstly derived by taking into account the controllability of the rotor side converter...... and the maximum allowable voltage of the stator. Then the impact of the SDBR value on the rotor current, stator voltage, DC-link voltage, reactive power capability and introduced power loss during voltage sag operation is evaluated by simulation. The presented study enables a trade-off sizing of the SDBR among...

Performance evaluation of wideband bio-impedance spectroscopy using constant voltage source and constant current source

International Nuclear Information System (INIS)

Mohamadou, Youssoufa; Oh, Tong In; Wi, Hun; Sohal, Harsh; Farooq, Adnan; Woo, Eung Je; McEwan, Alistair Lee

2012-01-01

Current sources are widely used in bio-impedance spectroscopy (BIS) measurement systems to maximize current injection for increased signal to noise while keeping within medical safety specifications. High-performance current sources based on the Howland current pump with optimized impedance converters are able to minimize stray capacitance of the cables and setup. This approach is limited at high frequencies primarily due to the deteriorated output impedance of the constant current source when situated in a real measurement system. For this reason, voltage sources have been suggested, but they require a current sensing resistor, and the SNR reduces at low impedance loads due to the lower current required to maintain constant voltage. In this paper, we compare the performance of a current source-based BIS and a voltage source-based BIS, which use common components. The current source BIS is based on a Howland current pump and generalized impedance converters to maintain a high output impedance of more than 1 MΩ at 2 MHz. The voltage source BIS is based on voltage division between an internal current sensing resistor (R s ) and an external sample. To maintain high SNR, R s is varied so that the source voltage is divided more or less equally. In order to calibrate the systems, we measured the transfer function of the BIS systems with several known resistor and capacitor loads. From this we may estimate the resistance and capacitance of biological tissues using the least-squares method to minimize error between the measured transimpedance excluding the system transfer function and that from an impedance model. When tested on realistic loads including discrete resistors and capacitors, and saline and agar phantoms, the voltage source-based BIS system had a wider bandwidth of 10 Hz to 2.2 MHz with less than 1% deviation from the expected spectra compared to more than 10% with the current source. The voltage source also showed an SNR of at least 60 dB up to 2.2 MHz

Calibration of the ISOLDE acceleration voltage using a high-precision voltage divider and applying collinear fast beam laser spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Krieger, A., E-mail: kriegea@uni-mainz.d [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); Geppert, Ch. [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, 64291 Darmstadt (Germany); Catherall, R. [CERN, CH-1211 Geneve 23 (Switzerland); Hochschulz, F. [Institut fuer Kernphysik, Universitaet Muenster, 48149 Muenster (Germany); Kraemer, J.; Neugart, R. [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); Rosendahl, S. [Institut fuer Kernphysik, Universitaet Muenster, 48149 Muenster (Germany); Schipper, J.; Siesling, E. [CERN, CH-1211 Geneve 23 (Switzerland); Weinheimer, Ch. [Institut fuer Kernphysik, Universitaet Muenster, 48149 Muenster (Germany); Yordanov, D.T. [Max-Planck-Institut fuer Kernphysik, 69117 Heidelberg (Germany); Noertershaeuser, W. [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, 64291 Darmstadt (Germany)

2011-03-11

A high-voltage divider with accuracy at the ppm level and collinear laser spectroscopy were used to calibrate the high-voltage installation at the radioactive ion beam facility ISOLDE at CERN. The accurate knowledge of this voltage is particularly important for collinear laser spectroscopy measurements. Beam velocity measurements using frequency-comb based collinear laser spectroscopy agree with the new calibration. Applying this, one obtains consistent results for isotope shifts of stable magnesium isotopes measured using collinear spectroscopy and laser spectroscopy on laser-cooled ions in a trap. The long-term stability and the transient behavior during recovery from a voltage dropout were investigated for the different power supplies currently applied at ISOLDE.

Method of triggering the vacuum arc in source with a resistor

International Nuclear Information System (INIS)

Zheng Le; Lan Zhaohui; Long Jidong; Peng Yufei; Li Jie; Yang Zhen; Dong Pan; Shi Jinshui

2014-01-01

Background: The metal vapor vacuum arc (MEVVA) ion source is a common source which provides strong metal ion flow. To trigger this ion source, a high-voltage trigger pulse generator and a high-voltage isolation pulse transformer are needed, which makes the power supply system complex. Purpose: To simplify the power supply system, a trigger method with a resistor was introduced, and some characteristics of this method were studied. Methods: The ion flow provided by different main arc current was measured, as well as the trigger current. The main arc current and the ion current were recorded with different trigger resistances. Results: Experimental results showed that, within a certain range of resistances, the larger the resistance value, the more difficult it was to success fully trigger the source. Meanwhile, the main arc rising edge became slower on the increasing in the trigger time. However, the resistance value increment had hardly impact on the intensity of ion flow extracted in the end, The ion flow became stronger with the increasing main arc current. Conclusion: The power supply system of ion source is simplified by using the trigger method with a resistor. Only a suitable resistor was needed to complete the conversion process from trigger to arc initiating. (authors)

Calibration of the ISOLDE acceleration voltage using a high-precision voltage divider and applying collinear fast beam laser spectroscopy

CERN Document Server

Krieger, A.; Catherall, R.; Hochschulz, F.; Kramer, J.; Neugart, R.; Rosendahl, S.; Schipper, J.; Siesling, E.; Weinheimer, Ch.; Yordanov, D.T.; Nortershauser, W.

2011-01-01

A high-voltage divider with accuracy at the ppm level and collinear laser spectroscopy were used to calibrate the highvoltage installation at the radioactive ion beam facility ISOLDE at CERN. The accurate knowledge of this voltage is particularly important for collinear laser spectroscopy measurements. Beam velocity measurements using frequencycomb based collinear laser spectroscopy agree with the new calibration. Applying this, one obtains consistent results for isotope shifts of stable magnesium isotopes measured using collinear spectroscopy and laser spectroscopy on laser-cooled ions in a trap. The long-term stability and the transient behavior during recovery from a voltage dropout were investigated for the different power supplies currently applied at ISOLDE.

Design of a Compact Dump Resistor System for LCD Magnet

CERN Document Server

Gaddi, A

2010-01-01

In this technical note we suggest a possible solution for the choice of the detector magnet dump resistor. The push-pull scenario for Linear Collider Detectors imposes new solutions for magnet powering and protection lines, else than what developed for LHC detectors. The magnet dump resistor is the protecting equipment that has the function of extracting a significant amount of magnetic stored energy, from the coil winding to a dump. The LCD magnet has to move with the experiment from the garage to the beam position, so it has to be compact and reliable at the same time. We make here a proposal for a passive water-cooled dumper, we calculate the minimum amount of water required, the resistor hot-spot temperature, the overall mechanical design. The electrical part is not covered by this note, as it can be assumed that the solutions adopted by LHC detector magnets, in terms of quench instrumentation, energy extraction and maximum voltage, are not significantly affected by the push-pull scenario.

Single pole rapid reclosing: effective damping of ehv switching surges through discharge resistors

Energy Technology Data Exchange (ETDEWEB)

Heinemann, T

1965-04-30

The stability of interconnecting circuits is very important and loss of synchronism of a complete network due to a temporary single-phase fault is operationally and economically undesirable. The use of grounding resistors together with load-break isolators which can be electrically or mechanically coupled to the circuit-breakers yield interesting possibilities in extra-high-voltage networks. The three problems, i.e., discharging of charged lines, damping of switching surges, and single-pole rapid-reclosing, can be solved through the use of a number of similar resistors and load-break isolators connected in series according to the voltage. The thermal and electrical stresses of the resistors can be kept within permissible limits. The time required for arc extinction and the limits in respect of length of lines will have to be determined by actual tests. For single-pole rapid-reclosing during a single-phase earth fault the switching operations on both sides of the line must be simultaneous. Because of the very small divergence of the opening and making times of modern circuit-breakers it will be sufficient only to synchronise the operating impulse.

Sensitivity enhancement of polysilicon piezo-resistive pressure sensors with phosphorous diffused resistors

International Nuclear Information System (INIS)

Sivakumar, K; Dasgupta, N; Bhat, K N; Natarajan, K

2006-01-01

It is generally accepted that the piezo-resistive coefficient in single crystal silicon is higher when P-type impurities such as boron are used for doping the resistors. In this paper we demonstrate that the sensitivity of polycrystalline silicon piezo-resistive pressure sensors can be enhanced considerably when phosphorus diffusion source is used instead of boron dopant for realizing the piezo-resistors. Pressure sensors have been designed and fabricated with the polycrystalline piezo-resistors connected in the form of a Wheatstone bridge and laid out on thermal oxide grown on membranes obtained with a Silicon On Insulator (SOI) approach. The SOI wafers required for this purpose have been realized in-house by Silicon Fusion Bonding (SFB) and etch back technique in our laboratory. This approach provides excellent isolation between the resistors and enables zero temperature coefficient of the polysilicon resistor. The results obtained in our laboratory have clearly demonstrated that by optimizing the phosphorus diffusion temperature and duration, it is possible to achieve sensitivities in excess of 20mV /Bar for bridge input voltage of 10V, with linearity within 1% over a differential pressure range up to 10Bar (10 6 Pascal), and burst pressure in excess of 50 Bar as compared to the 10mV /Bar sensitivity obtained with boron doped polysilicon piezo-resistors. This enhancement is attributed to grain boundary passivation by phosphorous atoms

Improving the transient response of a bolt-clamped Langevin transducer using a parallel resistor.

Science.gov (United States)

Chang, Kuo Tsi

2003-08-01

This paper suggests a parallel resistor to reduce DC time constant and DC response time of the transient response, induced immediately after an AC voltage connected to a bolt-clamped Langevin transducer (BLT) is switched off. An equivalent circuit is first expressed. Then, an open-circuit transient response at the terminals induced by initial states is derived and measured, and thus parameters for losses of the BLT device are estimated by DC and AC time constants of the transient response. Moreover, a driving and measuring system is designed to determine transient response and steady-state responses of the BLT device, and a parallel resistor is connected to the BLT device to reduce the DC time constant. Experimental results indicate that the DC time constant greatly exceeds the AC time constant without the parallel resistor, and greatly decreases from 42 to 1 ms by a 100-kOmega parallel resistor.

N-Bit Binary Resistor

Science.gov (United States)

Tcheng, Ping

1989-01-01

Binary resistors in series tailored to precise value of resistance. Desired value of resistance obtained by cutting appropriate traces across resistors. Multibit, binary-based, adjustable resistor with high resolution used in many applications where precise resistance required.

Maximum Bandwidth Enhancement of Current Mirror using Series-Resistor and Dynamic Body Bias Technique

Directory of Open Access Journals (Sweden)

V. Niranjan

2014-09-01

Full Text Available This paper introduces a new approach for enhancing the bandwidth of a low voltage CMOS current mirror. The proposed approach is based on utilizing body effect in a MOS transistor by connecting its gate and bulk terminals together for signal input. This results in boosting the effective transconductance of MOS transistor along with reduction of the threshold voltage. The proposed approach does not affect the DC gain of the current mirror. We demonstrate that the proposed approach features compatibility with widely used series-resistor technique for enhancing the current mirror bandwidth and both techniques have been employed simultaneously for maximum bandwidth enhancement. An important consequence of using both techniques simultaneously is the reduction of the series-resistor value for achieving the same bandwidth. This reduction in value is very attractive because a smaller resistor results in smaller chip area and less noise. PSpice simulation results using 180 nm CMOS technology from TSMC are included to prove the unique results. The proposed current mirror operates at 1Volt consuming only 102 µW and maximum bandwidth extension ratio of 1.85 has been obtained using the proposed approach. Simulation results are in good agreement with analytical predictions.

Resistor-logic demultiplexers for nanoelectronics based on constant-weight codes.

Science.gov (United States)

Kuekes, Philip J; Robinett, Warren; Roth, Ron M; Seroussi, Gadiel; Snider, Gregory S; Stanley Williams, R

2006-02-28

The voltage margin of a resistor-logic demultiplexer can be improved significantly by basing its connection pattern on a constant-weight code. Each distinct code determines a unique demultiplexer, and therefore a large family of circuits is defined. We consider using these demultiplexers for building nanoscale crossbar memories, and determine the voltage margin of the memory system based on a particular code. We determine a purely code-theoretic criterion for selecting codes that will yield memories with large voltage margins, which is to minimize the ratio of the maximum to the minimum Hamming distance between distinct codewords. For the specific example of a 64 × 64 crossbar, we discuss what codes provide optimal performance for a memory.

A fully integrated, monolithic, cryogenic charge sensitive preamplifier using N-channel JFETs and polysilicon resistors

International Nuclear Information System (INIS)

Jung, T.S.; Guckel, H.; Seefeldt, J.; Ott, G.; Ahn, Y.C.

1994-01-01

In this paper, an integrated charge preamplifier to be used with small (10--30 mm 2 ) Si(Li) and Ge(Li) X-ray detectors is described. The preamplifier is designed to operate at cryogenic temperatures (∼100 K to 160 K) for the best performance. An N-channel JFET process technology for integrated charge sensitive preamplifiers has been developed. The process integrates multiple pinch-off voltage JFETs fabricated in an n-type epitaxial layer on a low resistivity p-type substrate. The process also incorporates polysilicon resistors integrated on the same die as the JFETs. The optimized polysilicon resistors exhibit 1/f noise nearly as good as metal film resistors at the same current. Results for integrated amplifier are discussed

Effects of a parallel resistor on electrical characteristics of a piezoelectric transformer in open-circuit transient state.

Science.gov (United States)

Chang, Kuo-Tsai

2007-01-01

This paper investigates electrical transient characteristics of a Rosen-type piezoelectric transformer (PT), including maximum voltages, time constants, energy losses and average powers, and their improvements immediately after turning OFF. A parallel resistor connected to both input terminals of the PT is needed to improve the transient characteristics. An equivalent circuit for the PT is first given. Then, an open-circuit voltage, involving a direct current (DC) component and an alternating current (AC) component, and its related energy losses are derived from the equivalent circuit with initial conditions. Moreover, an AC power control system, including a DC-to-AC resonant inverter, a control switch and electronic instruments, is constructed to determine the electrical characteristics of the OFF transient state. Furthermore, the effects of the parallel resistor on the transient characteristics at different parallel resistances are measured. The advantages of adding the parallel resistor also are discussed. From the measured results, the DC time constant is greatly decreased from 9 to 0.04 ms by a 10 k(omega) parallel resistance under open output.

Passive Resistor Temperature Compensation for a High-Temperature Piezoresistive Pressure Sensor.

Science.gov (United States)

Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Li, Wangwang; Zhang, Diya; Xiong, Jijun

2016-07-22

The main limitation of high-temperature piezoresistive pressure sensors is the variation of output voltage with operating temperature, which seriously reduces their measurement accuracy. This paper presents a passive resistor temperature compensation technique whose parameters are calculated using differential equations. Unlike traditional experiential arithmetic, the differential equations are independent of the parameter deviation among the piezoresistors of the microelectromechanical pressure sensor and the residual stress caused by the fabrication process or a mismatch in the thermal expansion coefficients. The differential equations are solved using calibration data from uncompensated high-temperature piezoresistive pressure sensors. Tests conducted on the calibrated equipment at various temperatures and pressures show that the passive resistor temperature compensation produces a remarkable effect. Additionally, a high-temperature signal-conditioning circuit is used to improve the output sensitivity of the sensor, which can be reduced by the temperature compensation. Compared to traditional experiential arithmetic, the proposed passive resistor temperature compensation technique exhibits less temperature drift and is expected to be highly applicable for pressure measurements in harsh environments with large temperature variations.

Electrochemical characterization of liquid resistors

International Nuclear Information System (INIS)

Wilson, J.M.; Whiteley, R.V.

1983-01-01

During the first two years of operation of Sandia's Particle Beam Fusion Accelerator (PBFA I) the reliability of the CuSO 4 solution resistors in the Marx Generator Energy Storage System has been unsatisfactory. Resistor failure, which is characterized by a large increase in resistance, has been attributed to materials, production techniques, and operating parameters. The problems associated with materials and production techniques have been identified and solutions are proposed. Non-ideal operating parameters are shown to cause polarization of the cathode in the resistor. This initiates electrochemical reactions in the resistor. These reactions often lead to resistance changes and to eventual resistor failure

Intermittency-induced criticality in a resistor-inductor-diode circuit.

Science.gov (United States)

Potirakis, Stelios M; Contoyiannis, Yiannis; Diakonos, Fotios K; Hanias, Michael P

2017-04-01

The current fluctuations of a driven resistor-inductor-diode circuit are investigated here looking for signatures of critical behavior monitored by the driving frequency. The experimentally obtained time series of the voltage drop across the resistor (as directly proportional to the current flowing through the circuit) were analyzed by means of the method of critical fluctuations in analogy to thermal critical systems. Intermittent criticality was revealed for a critical frequency band signifying the transition between the normal rectifier phase in the low frequencies and a full-wave conducting, capacitorlike phase in the high frequencies. The transition possesses critical characteristics with a characteristic exponent p_{l}=1.65. A fractal analysis in terms of the rescale range (R/RSS) and detrended fluctuation analysis methods yielded results fully compatible with the critical dynamics analysis. Suggestions for the interpretation of the observed behavior in terms of p-n junction operation are discussed.

High linearity current communicating passive mixer employing a simple resistor bias

International Nuclear Information System (INIS)

Liu Rongjiang; Guo Guiliang; Yan Yuepeng

2013-01-01

A high linearity current communicating passive mixer including the mixing cell and transimpedance amplifier (TIA) is introduced. It employs the resistor in the TIA to reduce the source voltage and the gate voltage of the mixing cell. The optimum linearity and the maximum symmetric switching operation are obtained at the same time. The mixer is implemented in a 0.25 μm CMOS process. The test shows that it achieves an input third-order intercept point of 13.32 dBm, conversion gain of 5.52 dB, and a single sideband noise figure of 20 dB. (semiconductor integrated circuits)

Analyses of power output of piezoelectric energy-harvesting devices directly connected to a load resistor using a coupled piezoelectric-circuit finite element method.

Science.gov (United States)

Zhu, Meiling; Worthington, Emma; Njuguna, James

2009-07-01

This paper presents, for the first time, a coupled piezoelectric-circuit finite element model (CPC-FEM) to analyze the power output of a vibration-based piezoelectric energy-harvesting device (EHD) when it is connected to a load resistor. Special focus is given to the effect of the load resistor value on the vibrational amplitude of the piezoelectric EHD, and thus on the current, voltage, and power generated by the device, which are normally assumed to be independent of the load resistor value to reduce the complexity of modeling and simulation. The presented CPC-FEM uses a cantilever with a sandwich structure and a seismic mass attached to the tip to study the following characteristics of the EHD as a result of changing the load resistor value: 1) the electric outputs: the current through and voltage across the load resistor; 2) the power dissipated by the load resistor; 3) the displacement amplitude of the tip of the cantilever; and 4) the shift in the resonant frequency of the device. It is found that these characteristics of the EHD have a significant dependence on the load resistor value, rather than being independent of it as is assumed in most literature. The CPC-FEM is capable of predicting the generated output power of the EHD with different load resistor values while simultaneously calculating the effect of the load resistor value on the displacement amplitude of the tip of the cantilever. This makes the CPC-FEM invaluable for validating the performance of a designed EHD before it is fabricated and tested, thereby reducing the recurring costs associated with repeat fabrication and trials. In addition, the proposed CPC-FEM can also be used for producing an optimized design for maximum power output.

Time-adjusted variable resistor

Science.gov (United States)

Heyser, R. C.

1972-01-01

Timing mechanism was developed effecting extremely precisioned highly resistant fixed resistor. Switches shunt all or portion of resistor; effective resistance is varied over time interval by adjusting switch closure rate.

Vamistor resistor investigation

Science.gov (United States)

1973-01-01

Results are presented of the failure investigation conducted on resistors produced by the Vamistor Divison, Wagner Electric Corporation. This failure investigation included; failure analyses, chemical and metallurgical analyses, failure mechanism studies, seal leak analyses, and nondestructive stress tests. The data, information, conclusions, and recommendation can be helpful in assessing current usage of these resistors.

Improved voltage gradient control system for electrostatic accelerators

International Nuclear Information System (INIS)

Jones, N.L.; Dittner, P.F.

1993-01-01

An improved voltage gradient control system has been designed and installed in the EN tandem at the Oak Ridge National Laboratory. An improved design was sought due to high failure rates, increasing replacement parts and labor costs, and decreasing availability of the original carbon film resistor systems supplied for the EN-12 at ORNL. The resulting system utilizes two inexpensive, readily available, metal oxide resistors in series between each plane. They are protected by coaxial stainless steel shielding tubes, and spark gaps across individual resistors and adjacent pairs. The new resistors mount atop the column bridge in a compact configuration. This permits easy access both to the resistors and to the interior column components such as the belt. Well controlled gradients now provide improved machine performance. Both initial capital outlay and future maintenance result in reduced costs. Design, installation, performance, and cost details are reported. (orig.)

Capturing power at higher voltages from arrays of microbial fuel cells without voltage reversal

KAUST Repository

Kim, Younggy; Hatzell, Marta C.; Hutchinson, Adam J.; Logan, Bruce E.

2011-01-01

to the circuit load (resistor). The parallel charging of the capacitors avoided voltage reversal, while discharging the capacitors in series produced up to 2.5 V with four capacitors. There were negligible energy losses in the circuit compared to 20-40% losses

General Voltage Feedback Circuit Model in the Two-Dimensional Networked Resistive Sensor Array

Directory of Open Access Journals (Sweden)

JianFeng Wu

2015-01-01

Full Text Available To analyze the feature of the two-dimensional networked resistive sensor array, we firstly proposed a general model of voltage feedback circuits (VFCs such as the voltage feedback non-scanned-electrode circuit, the voltage feedback non-scanned-sampling-electrode circuit, and the voltage feedback non-scanned-sampling-electrode circuit. By analyzing the general model, we then gave a general mathematical expression of the effective equivalent resistor of the element being tested in VFCs. Finally, we evaluated the features of VFCs with simulation and test experiment. The results show that the expression is applicable to analyze the VFCs’ performance of parameters such as the multiplexers’ switch resistors, the nonscanned elements, and array size.

Innovation of High Voltage Supply Adjustment Device on Diagnostic X-Ray Machine

International Nuclear Information System (INIS)

Sujatno; Wiranto Budi Santoso

2010-01-01

Innovation of high voltage supply adjustment device on diagnostic x-ray machine has been carried out. The innovation is conducted by utilizing an electronic circuit as a high voltage adjustment device. Usually a diagnostic x-ray machine utilizes a transformer or an auto-transformer as a high voltage supply adjustment device. A high power diagnostic x-ray machine needs a high power transformer which has big physical dimension. Therefore a box control where the transformer is located has to have big physical dimension. Besides, the price of the transformer is expensive and hardly found in local markets. In this innovation, the transformer is replaced by an electronic circuit. The main component of the electronic circuit is Triac BTA-40. As adjustment device, the triac is controlled by a variable resistor which is coupled by a stepper motor. A step movement of stepper motor varies a value of resistor. The resistor value determines the triac gate voltage. Furthermore the triac will open according to the value of electrical current flowing to the gate. When the gate is open, electrical voltage and current will flow from cathode to anode of the triac. The value of these electrical voltage and current depend on gate open condition. Then this triac output voltage is feed to diagnostic x-ray machine high voltage supply. Therefore the high voltage value of diagnostic x-ray machine is adjusted by the output voltage of the electronic circuit. By using this electronic circuit, the physical dimension of diagnostic x-ray machine box control and the price of the equipment can be reduced. (author)

An automatic device for charging a storage battery

Energy Technology Data Exchange (ETDEWEB)

Pasyukov, A A

1984-01-01

The purpose of the invention is to increase the service life of storage batteries (AB) through ensuring automatic protection of the device from overloads with short circuits (KZ) and from incorrect switching polarity of the storage batteries. The device contains a transformer, a rectifier, a smoothing capacitor, a trigger capacitor, a charge current control transistor, a controllable transistor, a shielding transistor, two resistors, a diode, a resistor and a voltage divider, another resistor, a reference voltage stabilitron, a resistor and another diode and the storage battery.

Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect

Energy Technology Data Exchange (ETDEWEB)

Li Shu; Zhang Tong [Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States)], E-mail: lis4@rpi.edu, E-mail: tzhang@ecse.rpi.edu

2008-05-07

Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance.

Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect.

Science.gov (United States)

Li, Shu; Zhang, Tong

2008-05-07

Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance.

Architecture design of resistor/FET-logic demultiplexer for hybrid CMOS/nanodevice circuit interconnect

International Nuclear Information System (INIS)

Li Shu; Zhang Tong

2008-01-01

Hybrid nanoelectronics consisting of nanodevice crossbars on top of CMOS backplane circuits is emerging as one viable option to sustain Moore's law after the CMOS scaling limit is reached. One main design challenge in such hybrid nanoelectronics is the interface between the highly dense nanowires in nanodevice crossbars and relatively coarse microwires in the CMOS domain. Such an interface can be realized through a logic circuit called a demultiplexer (demux). In this context, all the prior work on demux design uses a single type of device, such as resistor, diode or field effect transistor (FET), to realize the demultiplexing function. However, different types of devices have their own advantages and disadvantages in terms of functionality, manufacturability, speed and power consumption. This makes none of them provide a satisfactory solution. To tackle this challenge, this work proposes to combine resistor with FET to implement the demux, leading to the hybrid resistor/FET-logic demux. Such hybrid demux architecture can make these two types of devices complement each other well to improve the overall demux design effectiveness. Furthermore, due to the inevitable fabrication process variations at the nanoscale, the effects of resistor conductance and FET threshold voltage variability are analyzed and evaluated based on computer simulations. The simulation results provide the requirement on the fabrication process to ensure a high demux reliability, and promise the hybrid resistor/FET-logic demux an improved addressability and process variance tolerance

Multifunction Voltage-Mode Filter Using Single Voltage Differencing Differential Difference Amplifier

Directory of Open Access Journals (Sweden)

Chaichana Amornchai

2017-01-01

Full Text Available In this paper, a voltage mode multifunction filter based on single voltage differencing differential difference amplifier (VDDDA is presented. The proposed filter with three input voltages and single output voltage is constructed with single VDDDA, two capacitors and two resistors. Its quality factor can be adjusted without affecting natural frequency. Also, the natural frequency can be electronically tuned via adjusting of bias current. The filter can offer five output responses, high-pas (HP, band-pass (BP, band-reject (BR, low-pass (LP and all-ass (AP functions in the same circuit topology. The output response can be selected by choosing the suitable input voltage without the component matching condition and the requirement of additional double gain voltage amplifier. PSpice simulation results to confirm an operation of the proposed filter correspond to the theory.

A Self-Biased Active Voltage Doubler for Energy Harvesting Systems

KAUST Repository

Tayyab, Umais

2017-12-03

An active voltage doubler utilizing a single supply op-amp for energy harvesting system is presented. The proposed doubler is used for rectification process to achieve both acceptably high power conversion efficiency (PCE) and large rectified DC voltage. The incorporated op-amp is self-biased, meaning no external supply is needed but rather it uses part of the harvested energy for its biasing. The proposed active doubler achieves maximum power conversion efficiency (PCE) of 61.7% for a 200 Hz sinusoidal input of 0.8 V for a 20 K load resistor. This efficiency is 2 times more when compared with the passive voltage doubler. The rectified DC voltage is almost 2 times more than conventional passive doubler. The relation between PCE and the load resistor is also presented. The proposed active voltage doubler is designed and simulated in LF 0.15 μm CMOS process technology using Cadence virtuoso tool.

30 CFR 75.802 - Protection of high-voltage circuits extending underground.

Science.gov (United States)

2010-07-01

...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of high-voltage circuits extending... which shall be grounded through a suitable resistor at the source transformers, and a grounding circuit...

Nonlinear random resistor diode networks and fractal dimensions of directed percolation clusters.

Science.gov (United States)

Stenull, O; Janssen, H K

2001-07-01

We study nonlinear random resistor diode networks at the transition from the nonpercolating to the directed percolating phase. The resistor-like bonds and the diode-like bonds under forward bias voltage obey a generalized Ohm's law V approximately I(r). Based on general grounds such as symmetries and relevance we develop a field theoretic model. We focus on the average two-port resistance, which is governed at the transition by the resistance exponent straight phi(r). By employing renormalization group methods we calculate straight phi(r) for arbitrary r to one-loop order. Then we address the fractal dimensions characterizing directed percolation clusters. Via considering distinct values of the nonlinearity r, we determine the dimension of the red bonds, the chemical path, and the backbone to two-loop order.

Supplementary High-Input Impedance Voltage-Mode Universal Biquadratic Filter Using DVCCs

Directory of Open Access Journals (Sweden)

Jitendra Mohan

2012-01-01

Full Text Available To further extend the existing knowledge on voltage-mode universal biquadratic filter, in this paper, a new biquadratic filter circuit with single input and multiple outputs is proposed, employing three differential voltage current conveyors (DVCCs, three resistors, and two grounded capacitors. The proposed circuit realizes all the standard filter functions, that is, high-pass, band-pass, low-pass, notch, and all-pass filters simultaneously. The circuit enjoys the feature of high-input impedance, orthogonal control of resonance angular frequency (o, and quality factor (Q via grounded resistor and the use of grounded capacitors which is ideal for IC implementation.

Voltages and electric currents mensuration - class 15 kV - for systems electro-optical and magneto-optical; Medicao de tensoes e correntes - classe 15 kv - por sistemas eletro-opticos e magneto-opticos

Energy Technology Data Exchange (ETDEWEB)

Costa, Marcos Rodrigues

1996-07-01

The technical feasibility of the development of a novel system measuring of high voltage and current in 15 kV distribution lines was presented. The system is basically the combination of two other systems, one conventional and other electro-optical. The conventional subsystem is based on voltage dividers and magnetic rings while the electro-optical subsystem uses LEDs, resistors, optical-fibers and photodetectors. The system was completely tested in laboratory and its main characteristics are low price, easy of installation and flexibility. Two software for data acquisition by GPIB and A/D boards were also developed. The can provide reports on voltages, currents, power and phase-power. (author)

Current limiting capability of diffused resistors

International Nuclear Information System (INIS)

Shedd, W.; Cappelli, J.

1979-01-01

An experimental evaluation of the current limiting capability of dielectrically isolated diffused resistors at transient ionizing dose rates up to 6*10 12 rads(Si)/sec is presented. Existing theoretical predictions of the transient response of diffused resistors are summarized and compared to the experimentally measured values. The test resistors used allow the effects of sheet resistance and geometry on the transient response to be determined. The experimental results show that typical dielectrically isolated diffused resistors maintain adequate current limiting capability for use in radiation hardened integrated circuits

High voltage distributions in RPCs

International Nuclear Information System (INIS)

Inoue, Y.; Muranishi, Y.; Nakamura, M.; Nakano, E.; Takahashi, T.; Teramoto, Y.

1996-01-01

High voltage distributions on the inner surfaces of RPCs electrodes were calculated by using a two-dimensional resistor network model. The calculated result shows that the surface resistivity of the electrodes should be high, compared to their volume resistivity, to get a uniform high voltage over the surface. Our model predicts that the rate capabilities of RPCs should be inversely proportional to the thickness of the electrodes if the ratio of surface-to-volume resistivity is low. (orig.)

Suppression of Adverse Effects of GIC Using Controlled Variable Grounding Resistor

Science.gov (United States)

Abuhussein, A.; Ali, M. H.

2016-12-01

Geomagnetically induced current (GIC) has a harmful impact on power systems, with a large footprint. Mitigation strategies for the GIC are required to protect the integrity of the power system. To date, the adverse effects of GIC are being mitigated by either operational procedures or grounding fixed capacitors (GFCs). The operational procedures are uncertain, reduce systems' reliability, and increase energy losses. On the other hand, GFCs, incur voltage spikes, increase the transformer cost substantially, and require protection circuitry. This study investigates new possible approaches to cope with GIC, by using a controlled variable grounding resistor (CVGR), without interfering with the system's normal operation. In addition, the new techniques help suppress unsymmetrical faults in the power network. The controllability of the grounding resistor is applied using three different techniques: (1) a Parallel switch that is controlled by PI regulated duty cycle, (2) a Parallel switch that is triggered by a preset values in a look-up-table (LUT), and (3) a Mechanical resistor varied by a Fuzzy logic controller (FLC). The experimental results were obtained and validated using the MATLAB/SIMULINK software. A hypothetical power system that consists of a generator, a 765kv, 500 km long transmission lines connecting between a step-up, Δ-Yn, transformer, and a step-down, Yn-Δ, transformer, is considered. The performance of the CVGR is compared with that of the GFC under the cases of GIC event and unsymmetrical faults. From the simulation results, the following points are concluded: The CVGR effectively suppresses the GIC flowing in the system. Consequently, it protects the transformers from saturation and the rest of the system from collapsing. The CVGR also reduces the voltage and power swings associated with unsymmetrical faults and blocks the zero sequence current flowing through the neutral of the transformer. The performance of the CVGR surpasses that of the GFC in

Improved switch-resistor packaging

Science.gov (United States)

Redmerski, R. E.

1980-01-01

Packaging approach makes resistors more accessible and easily identified with specific switches. Failures are repaired more quickly because of improved accessibility. Typical board includes one resistor that acts as circuit breaker, and others are positioned so that their values can be easily measured when switch is operated. Approach saves weight by using less wire and saves valuable panel space.

Compact Unequal Power Divider with Filtering Response

Directory of Open Access Journals (Sweden)

Wei-Qiang Pan

2015-01-01

Full Text Available We present a novel unequal power divider with bandpass responses. The proposed power divider consists of five resonators and a resistor. The power division ratio is controlled by altering the coupling strength among the resonators. The output ports have the characteristic impedance of 50 Ω and impedance transformers in classical Wilkinson power dividers are not required in this design. Use of resonators enables the filtering function of the power divider. Two transmission zeros are generated near the passband edges, resulting in quasielliptic bandpass responses. For validation, a 2 : 1 filtering power divider is implemented. The fabricated circuit size is 0.22 λg × 0.08 λg, featuring compact size for unequal filtering power dividers, which is suitable for the feeding networks of antenna arrays.

A new high-voltage level-shifting circuit for half-bridge power ICs

International Nuclear Information System (INIS)

Kong Moufu; Chen Xingbi

2013-01-01

In order to reduce the chip area and improve the reliability of HVICs, a new high-voltage level-shifting circuit with an integrated low-voltage power supply, two PMOS active resistors and a current mirror is proposed. The integrated low-voltage power supply not only provides energy for the level-shifting circuit and the logic circuit, but also provides voltage signals for the gates and sources of the PMOS active resistors to ensure that they are normally-on. The normally-on PMOS transistors do not, therefore, need to be fabricated in the depletion process. The current mirror ensures that the level-shifting circuit has a constant current, which can reduce the process error of the high-voltage devices of the circuit. Moreover, an improved RS trigger is also proposed to improve the reliability of the circuit. The proposed level-shifting circuit is analyzed and confirmed by simulation with MEDICI, and the simulation results show that the function is achieved well. (semiconductor integrated circuits)

Analysis of Paralleling Limited Capacity Voltage Sources by Projective Geometry Method

Directory of Open Access Journals (Sweden)

Alexandr Penin

2014-01-01

Full Text Available The droop current-sharing method for voltage sources of a limited capacity is considered. Influence of equalizing resistors and load resistor is investigated on uniform distribution of relative values of currents when the actual loading corresponds to the capacity of a concrete source. Novel concepts for quantitative representation of operating regimes of sources are entered with use of projective geometry method.

Resistance and resistance fluctuations in random resistor networks under biased percolation.

Science.gov (United States)

Pennetta, Cecilia; Reggiani, L; Trefán, Gy; Alfinito, E

2002-06-01

We consider a two-dimensional random resistor network (RRN) in the presence of two competing biased processes consisting of the breaking and recovering of elementary resistors. These two processes are driven by the joint effects of an electrical bias and of the heat exchange with a thermal bath. The electrical bias is set up by applying a constant voltage or, alternatively, a constant current. Monte Carlo simulations are performed to analyze the network evolution in the full range of bias values. Depending on the bias strength, electrical failure or steady state are achieved. Here we investigate the steady state of the RRN focusing on the properties of the non-Ohmic regime. In constant-voltage conditions, a scaling relation is found between /(0) and V/V(0), where is the average network resistance, (0) the linear regime resistance, and V0 the threshold value for the onset of nonlinearity. A similar relation is found in constant-current conditions. The relative variance of resistance fluctuations also exhibits a strong nonlinearity whose properties are investigated. The power spectral density of resistance fluctuations presents a Lorentzian spectrum and the amplitude of fluctuations shows a significant non-Gaussian behavior in the prebreakdown region. These results compare well with electrical breakdown measurements in thin films of composites and of other conducting materials.

Calculable resistors of coaxial design

International Nuclear Information System (INIS)

Kucera, J; Vollmer, E; Schurr, J; Bohacek, J

2009-01-01

1000 Ω and 1290.64 Ω coaxial resistors with calculable frequency dependence have been realized at PTB to be used in quantum Hall effect-based impedance measurements. In contradistinction to common designs of coaxial resistors, the design described in this paper makes it possible to remove the resistive element from the shield and to handle it without cutting the outer cylindrical shield of the resistor. Emphasis has been given to manufacturing technology and suppressing unwanted sources of frequency dependence. The adjustment accuracy is better than 10 µΩ Ω −1

Mitigation of Voltage Swells by Static Series Compensator

DEFF Research Database (Denmark)

Awad, Hilmy; Blaabjerg, Frede

2004-01-01

Swells and overvoltages can cause overheating, tripping or even destruction of industrial equipment such as motor drives and control relays. This paper investigates the possibility of employing the Static Series Compensator (SSC) to mitigate voltage swells/overvoltages. In the case of voltage...... is lower than a predetermined voltage level, the active power is employed to charge the ESC to this voltage level; 2) otherwise, the overvoltage protection of the SSC must operate. This paper also applies an overvoltage protection scheme based on a combination of a dc resistor with a chopper and the valves...

A simple method to increase effective PMT gain by amplifier circuit powered from voltage divider

International Nuclear Information System (INIS)

Popov, V.; Majewski, S.; Wojtsekhowski, B.; Guerin, D

2001-01-01

A novel concept is introduced of additional effective signal amplification by employing a dedicated circuit to process anode or dynode signals prior to sending them through a standard 50 /spl Omega/ line/cable. The circuit is entirely powered by the current flowing through the base voltage divider. Additional gain factors of 2-10 were easily achieved with preserved operation speed and rate capability up to several MHz. This additional signal boost can be used in many applications where higher gain and/or lower PMT operational voltages are desirable. For example, in the case of a PMT employed in a low input light signal (such as a Cherenkov counter), this technique will permit operation at a lower voltage and, therefore, will result in better operational PMT stability and longer PMT lifetime. At present, two experimental set-ups at Jefferson Lab are using PMT bases using this concept

Small--radiation-amplitude dynamical voltage model of an irradiated, externally unbiased Josephson tunnel junction

International Nuclear Information System (INIS)

McAdory, R.T. Jr.

1988-01-01

A theory is presented for the nonequilibrium voltage states of an irradiated Josephson junction shunted by an external resistor but with no external current or voltage biasing. This device, referred to as a free-running Josephson junction, is modeled in a small--radiation-amplitude, deterministic regime extending the previous work of Shenoy and Agarwal. The time-averaged induced voltage is treated as a dynamical variable, the external radiation is modeled as a current source, and the induced junction-radiation vector potential, with and without a mode structure, is treated to first order in the driving currents. A dynamical equation for the time-averaged induced voltage yields a (nonequilibrium) steady-state relation between the time-averaged induced voltage and the incident radiation amplitude valid for a wide range of voltages, including zero. Regions of bistability occur in the voltage--versus--incident-amplitude curves, some of which are dependent on the external resistor. The zero-voltage state breaks down, as the external radiation amplitude is increased, at a critical value of the incident-radiation amplitude inversely proportional to the external resistance

Use of a Pre-Insertion Resistor to Minimize Zero-Missing Phenomenon and Switching Overvoltages

DEFF Research Database (Denmark)

Bak, Claus Leth; da Silva, Filipe Miguel Faria; Gudmundsdottir, Unnur Stella

2009-01-01

With the increasing use of High-Voltage Cables, which have different electric characteristics from Overhead Lines, phenomenon like current zero-missing start to appear more often on the transmission systems. Methods to prevent zero-missing phenomenon are still being studied and compared to see wh...... an optimal value of the resistance of the pre-insertion resistor that results in minimizing both the zero-missing phenomenon and switching overvoltages simultaneously....

On load resistor noise in preamplifiers for semiconductor detectors

International Nuclear Information System (INIS)

Baldin, S.A.; Bajramashvili, I.A.; Gubin, S.F.

1975-01-01

The main causes resulting in the deterioration of energy resolution in preamplifiers for semiconductor detectors (scd) with a resistor in the feedback circuit are discussed. A comparison of noise characteristics has been carried out of a number of high-resistance commercial and experimental resistors. The resistor noise dependence on the nature of drop of the resistor impedance active part in the region up to 100 Kc, as well as on the resistor spurious capacitance in shown

Critical exponents for diluted resistor networks.

Science.gov (United States)

Stenull, O; Janssen, H K; Oerding, K

1999-05-01

An approach by Stephen [Phys. Rev. B 17, 4444 (1978)] is used to investigate the critical properties of randomly diluted resistor networks near the percolation threshold by means of renormalized field theory. We reformulate an existing field theory by Harris and Lubensky [Phys. Rev. B 35, 6964 (1987)]. By a decomposition of the principal Feynman diagrams, we obtain diagrams which again can be interpreted as resistor networks. This interpretation provides for an alternative way of evaluating the Feynman diagrams for random resistor networks. We calculate the resistance crossover exponent phi up to second order in epsilon=6-d, where d is the spatial dimension. Our result phi=1+epsilon/42+4epsilon(2)/3087 verifies a previous calculation by Lubensky and Wang, which itself was based on the Potts-model formulation of the random resistor network.

A quantum accurate waveform synthesizer as a voltage reference for an electronic primary thermometer

Science.gov (United States)

Pollarolo, Alessio; Benz, Samuel; Rogalla, Horst; Dresselhaus, Paul

2014-03-01

We are using a quantum voltage noise source (QVNS) for use as an intrinsically accurate voltage reference for a new type of electronic temperature standard. In Johnson Noise Thermometry (JNT) the noise of a resistor is used to measure temperature or Boltzmann's constant k, because the Nyquist equation =4kTR Δf shows that the power spectral density is proportional to k, temperature T, resistance R and measurement bandwidth Δf . The QVNS is a digital to analog converter used to synthesize a voltage waveform that resembles pseudo-random noise comparable in amplitude to the resistor noise. The signal generated is a frequency comb of harmonics tones that are equally spaced in frequency, all having identical amplitudes but random phases. The QVNS is an array superconducting Josephson junctions that are biased with a pulsed waveform clocked at 10 GHz. The accuracy of the voltage waveform derives from the identical voltage pulses produced by each junction that are perfectly quantized because their time-integrals are always equal to flux quantum h/2 e. The time-dependent output voltage waveform is determined by the number of pulses and their density in time. The measurement electronics exploits cross-correlation techniques to reduce the uncorrelated measurement noise so as to reveal the resistor noise, both of which are on the order of 2 nV/ √Hz. With this technique we have measured k with an uncertainty of about one part in 105, which we hope to improve by another order of magnitude with further research.

Comparison of three resistor network division circuits for the readout of 4×4 pixel SiPM arrays

International Nuclear Information System (INIS)

Stratos, David; Maria, Georgiou; Eleftherios, Fysikopoulos; George, Loudos

2013-01-01

The purpose of this study is to investigate the behavior of a flexible SensL's silicon photomultiplier array (SPMArray4) photodetector for possible applications in PET imaging. We have designed and evaluated three different resistor network division circuits to read out the signal outputs of a 4×4 pixel SiPM array. We have applied firstly (i) a symmetric resistive voltage division circuit, secondly (ii) a symmetric resistive charge division circuit and thirdly (iii) a charge division multiplexing resistor network reducing the 16 pixel outputs to 4 position signals. In the first circuit the SensL SPMArray4-A0 preamplification electronics and a SPMArray4-A1 evaluation board providing the 16 pixels voltage outputs were used, before the symmetric resistive voltage network. We reduced the 16 voltage signals firstly to 4X and 4Y coordinate signals. Then those signals were further reduced to 2X and 2Y position signals connected via a resistor network. In the second readout circuit we have used the same technique but without the preamplification stage. The third circuit is based on a discretized positioning circuit, which multiplexes the 16 signals from the SiPM array to 4 position signals. The 4 position signals (Xa, Xb, Yc and Yd) were digitized using a free running sampling technique. An FPGA (Spartan 6 LX16) was used for triggering and signal processing of the pulses. We acquired raw images and energy histograms of a BGO and a CsI:Na pixilated scintillator under 22 Na excitation. A clear visualization of the discrete 2×2×5 mm 3 pixilated BGO scintillator elements as well as the 1×1×5 mm 3 pixilated CsI:Na crystal array was achieved with all applied readout circuits. The symmetric resistive charge division circuit provides higher peak to valley ratio than the other readout circuits. Τhe sensitivity and the energy resolution remained almost constant for the three circuits

30 CFR 77.510 - Resistors; location and guarding.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Resistors; location and guarding. 77.510 Section 77.510 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE... COAL MINES Electrical Equipment-General § 77.510 Resistors; location and guarding. Resistors, heaters...

Precision monitoring and calibration of the high-voltage for the KATRIN experiment; Praezisionsueberwachung und Kalibration der Hochspannung fuer das KATRIN-Experiment

Energy Technology Data Exchange (ETDEWEB)

Thuemmler, T.

2007-11-12

The goal of the KATRIN(KArlsruhe TRIritium Neutrino) Experiment is to directly determine the neutrino rest mass from the kinematics of the tritium-{beta}-decay. KATRIN uses the high resolution and luminosity of a spectrometer following the MAC-E filter principle. Based on the experience of the successful predecessor experiments in Mainz and Troisk and the improved experimental technology, KATRIN aims to reach a sensitivity on the neutrino mass of 0.2 eV/c{sup 2} (90% C.L.). One of the few systematic uncertainties that have to be reduced to meet this goal is the uncertainty of measuring and monitoring the potential of the electrostatic filter of the spectrometer. In tritium measurement mode voltages of about U{sub 0} =-18.6 kV have to be permanently monitored with a maximum uncertainty of 3.3 ppm ({approx} 61mV at U{sub 0}), in order not to add more than {delta}m{sup 2}{sub {nu}{sub ec}}{sup 4} {<=} 0.0075 eV{sup 2} to the total systematic uncertainty. The goal of this work is to build a new precision high voltage divider in cooperation with PTB Braunschweig that reaches an uncertainty of about 1 ppm at voltages up to 35 kV. The divider is based on a new type of precision resistors, which have been screened with respect to their warm up drift and their temperature coefficient at the ppm level. By combining 100 of the best matching samples, the mutual warm up effect could be reduced to a computed value of <0.02 ppm. The precision resistors are mounted in a shielded and temperature stabilized vessel under N{sub 2} gas. The properties of both installed low voltage outputs with the ratios 1972:1 and 3944:1 have been repeatedly calibrated with about one year time difference at the DC high voltage laboratory (division 2.31) of PTB. The performance of the new divider in real measurements has been tested with the prototype of the new condensed {sup 83m}Kr calibration source (CKrS) [Ost08] at the Mainz spectrometer. Detailed stability investigations of the energy of the {sup

Slew Rate Induced Distortion in Switched-Resistor Integrators

NARCIS (Netherlands)

Jiraseree-Amornkun, A.; Jiraseree-amornkun, A.; Worapishet, A.; Klumperink, Eric A.M.; Nauta, Bram; Surakampontorn, W.

2006-01-01

Abstract—OPAMP-RC integrators built with linear resistors and capacitors can achieve very high linearity. By means of a switched resistor, tuning of the RC time-constant is possible via the duty-cycle of the clock controlling the switched resistor. This paper analyzes the effect of OPAMP slew rate

Noise characteristics of resistors buried in low-temperature co-fired ceramics

International Nuclear Information System (INIS)

Kolek, A; Ptak, P; Dziedzic, A

2003-01-01

The comparison of noise properties of conventional thick film resistors prepared on alumina substrates and resistors embedded in low-temperature co-fired ceramics (LTCCs) is presented. Both types of resistors were prepared from commercially available resistive inks. Noise measurements of LTCC resistors below 1 kHz show Gaussian 1/f noise. This is concluded from the calculations of the second spectra as well as from studying the volume dependence of noise intensity. It has occurred that noise index of LTCC resistors on average is not worse than that of conventional resistors. A detailed study of co-fired surface resistors and co-fired buried resistors show that burying a resistor within LTCC substrate usually leads to (significant) enhancement of resistance but not of noise intensity. We interpret this behaviour as another argument in favour of tunnelling as the dominant conduction mechanism in LTCC resistors

Precision High-Voltage DC Dividers and Their Calibration

Czech Academy of Sciences Publication Activity Database

Dragounová, Naděžda

2005-01-01

Roč. 54, č. 5 (2005), s. 1911-1915 ISSN 0018-9456 R&D Projects: GA AV ČR KSK1048102; GA ČR GA202/03/0889 Keywords : calibration * dc voltage * high voltage (HV) Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.665, year: 2005

Solid-state resistor for pulsed power machines

Science.gov (United States)

Stoltzfus, Brian; Savage, Mark E.; Hutsel, Brian Thomas; Fowler, William E.; MacRunnels, Keven Alan; Justus, David; Stygar, William A.

2016-12-06

A flexible solid-state resistor comprises a string of ceramic resistors that can be used to charge the capacitors of a linear transformer driver (LTD) used in a pulsed power machine. The solid-state resistor is able to absorb the energy of a switch prefire, thereby limiting LTD cavity damage, yet has a sufficiently low RC charge time to allow the capacitor to be recharged without disrupting the operation of the pulsed power machine.

Probability density fittings of corrosion test-data: Implications on ...

Indian Academy of Sciences (India)

Steel-reinforced concrete; probability distribution functions; corrosion ... to be present in the corrosive system at a suitable concentration (Holoway et al 2004; Söylev & ..... voltage, equivalent to voltage drop, across a resistor divided by the ...

Network for minimizing current imbalances in a faradaic battery

Science.gov (United States)

Wozniak, Walter; Haskins, Harold J.

1994-01-01

A circuit for connecting a faradaic battery with circuitry for monitoring the condition of the battery includes a plurality of voltage divider networks providing battery voltage monitoring nodes and includes compensating resistors connected with the networks to maintain uniform discharge currents through the cells of the battery. The circuit also provides a reduced common mode voltage requirement for the monitoring circuitry by referencing the divider networks to one-half the battery voltage.

For current viewing resistor loads

Science.gov (United States)

Lyons, Gregory R [Tijeras, NM; Hass, Jay B [Lee's Summit, MO

2011-04-19

The invention comprises a terminal unit for a flat cable comprising a BNC-PCB connector having a pin for electrically contacting one or more conducting elements of a flat cable, and a current viewing resistor having an opening through which the pin extends and having a resistor face that abuts a connector face of the BNC-PCB connector, wherein the device is a terminal unit for the flat cable.

Calculating electronic tunnel currents in networks of disordered irregularly shaped nanoparticles by mapping networks to arrays of parallel nonlinear resistors

Energy Technology Data Exchange (ETDEWEB)

Aghili Yajadda, Mir Massoud [CSIRO Manufacturing Flagship, P.O. Box 218, Lindfield NSW 2070 (Australia)

2014-10-21

We have shown both theoretically and experimentally that tunnel currents in networks of disordered irregularly shaped nanoparticles (NPs) can be calculated by considering the networks as arrays of parallel nonlinear resistors. Each resistor is described by a one-dimensional or a two-dimensional array of equal size nanoparticles that the tunnel junction gaps between nanoparticles in each resistor is assumed to be equal. The number of tunnel junctions between two contact electrodes and the tunnel junction gaps between nanoparticles are found to be functions of Coulomb blockade energies. In addition, the tunnel barriers between nanoparticles were considered to be tilted at high voltages. Furthermore, the role of thermal expansion coefficient of the tunnel junction gaps on the tunnel current is taken into account. The model calculations fit very well to the experimental data of a network of disordered gold nanoparticles, a forest of multi-wall carbon nanotubes, and a network of few-layer graphene nanoplates over a wide temperature range (5-300 K) at low and high DC bias voltages (0.001 mV–50 V). Our investigations indicate, although electron cotunneling in networks of disordered irregularly shaped NPs may occur, non-Arrhenius behavior at low temperatures cannot be described by the cotunneling model due to size distribution in the networks and irregular shape of nanoparticles. Non-Arrhenius behavior of the samples at zero bias voltage limit was attributed to the disorder in the samples. Unlike the electron cotunneling model, we found that the crossover from Arrhenius to non-Arrhenius behavior occurs at two temperatures, one at a high temperature and the other at a low temperature.

High Voltage Resistive Divider Based on Cast Microwire in Glass Insulation on 6–24 kV Alternating Current of Commercial Frequency.

Directory of Open Access Journals (Sweden)

Juravleov A.

2008-12-01

Full Text Available It is presented the analysis and description of the construction of the high voltage resistive divider on the base of cast microwire in glass insulation on 6–24 kV alternating current of commercial frequency. It is presented the procedure of compensation of frequency error during the process of fabrication of divides and results of tests of the sample model of the divider as well.

Thermal aspects of resistors embedded in dielectrics

International Nuclear Information System (INIS)

Caprari, R.S.

1995-10-01

This note presents a formula for estimating the temperature of a distributed resistor or resistor chain that is immersed in a dielectric medium, which in turn is surrounded by a heat reservoir. An example computation from an actual instrument in included. 6 refs

Application to printed resistors

International Nuclear Information System (INIS)

Hachiyanagi, Yoshimi; Uraki, Hisatsugu; Sawamura, Masashi

1989-01-01

Most of printed circuit boards are made at present by etching copper foils which are laminated on insulating composite boards of paper/phenol resin or glass nonwoven fabric/epoxy rein. This is called subtractive process, and since this is a wet process, the problem of coping with the pollution due to etching solution, plating solution and others is involved. As the method of solving this problem, attention has been paid to the dry process which forms conductor patterns by screen printing using electro-conductive paste. For such resin substrates, generally polymer thick films (PTF) using thermosetting resin as the binder are used. Also the research on the formation of resistors, condensers and other parts by printing using the technology of cermet thick films (CTF) and PTF is active, and it is partially put in practical use. The problems are the deformation and deterioration of substrates, therefore, as the countermeasures, electron beam hardening type PTF has been studied, and various pastes have been developed. In this paper, electron beam hardening type printed resistors are reported. The features, resistance paste, and a number of the experiments on printed resistors are described. (K.I.)

Protonic/electronic hybrid oxide transistor gated by chitosan and its full-swing low voltage inverter applications

Energy Technology Data Exchange (ETDEWEB)

Chao, Jin Yu [Shanxi Province Key Laboratory High Gravity Chemical Engineering, North University of China, Taiyuan 030051 (China); Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn; Xiao, Hui [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Yuan, Zhi Guo, E-mail: ncityzg@163.com [Shanxi Province Key Laboratory High Gravity Chemical Engineering, North University of China, Taiyuan 030051 (China)

2015-12-21

Modulation of charge carrier density in condensed materials based on ionic/electronic interaction has attracted much attention. Here, protonic/electronic hybrid indium-zinc-oxide (IZO) transistors gated by chitosan based electrolyte were obtained. The chitosan-based electrolyte illustrates a high proton conductivity and an extremely strong proton gating behavior. The transistor illustrates good electrical performances at a low operating voltage of ∼1.0 V such as on/off ratio of ∼3 × 10{sup 7}, subthreshold swing of ∼65 mV/dec, threshold voltage of ∼0.3 V, and mobility of ∼7 cm{sup 2}/V s. Good positive gate bias stress stabilities are obtained. Furthermore, a low voltage driven resistor-loaded inverter was built by using an IZO transistor in series with a load resistor, exhibiting a linear relationship between the voltage gain and the supplied voltage. The inverter is also used for decreasing noises of input signals. The protonic/electronic hybrid IZO transistors have potential applications in biochemical sensors and portable electronics.

A resistor interpretation of general anisotropic cardiac tissue.

Science.gov (United States)

Shao, Hai; Sampson, Kevin J; Pormann, John B; Rose, Donald J; Henriquez, Craig S

2004-02-01

This paper describes a spatial discretization scheme for partial differential equation systems that contain anisotropic diffusion. The discretization method uses unstructured finite volumes, or the boxes, that are formed as a secondary geometric structure from an underlying triangular mesh. We show how the discretization can be interpreted as a resistive circuit network, where each resistor is assigned at each edge of the triangular element. The resistor is computed as an anisotropy dependent geometric quantity of the local mesh structure. Finally, we show that under certain conditions, the discretization gives rise to negative resistors that can produce non-physical hyperpolarizations near depolarizing stimuli. We discuss how the proper choice of triangulation (anisotropic Delaunay triangulation) can ensure monotonicity (i.e. all resistors are positive).

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

Science.gov (United States)

Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

2017-02-09

Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

Mitigating voltage lead errors of an AC Josephson voltage standard by impedance matching

Science.gov (United States)

Zhao, Dongsheng; van den Brom, Helko E.; Houtzager, Ernest

2017-09-01

A pulse-driven AC Josephson voltage standard (ACJVS) generates calculable AC voltage signals at low temperatures, whereas measurements are performed with a device under test (DUT) at room temperature. The voltage leads cause the output voltage to show deviations that scale with the frequency squared. Error correction mechanisms investigated so far allow the ACJVS to be operational for frequencies up to 100 kHz. In this paper, calculations are presented to deal with these errors in terms of reflected waves. Impedance matching at the source side of the system, which is loaded with a high-impedance DUT, is proposed as an accurate method to mitigate these errors for frequencies up to 1 MHz. Simulations show that the influence of non-ideal component characteristics, such as the tolerance of the matching resistor, the capacitance of the load input impedance, losses in the voltage leads, non-homogeneity in the voltage leads, a non-ideal on-chip connection and inductors between the Josephson junction array and the voltage leads, can be corrected for using the proposed procedures. The results show that an expanded uncertainty of 12 parts in 106 (k  =  2) at 1 MHz and 0.5 part in 106 (k  =  2) at 100 kHz is within reach.

Evaluation of Pressure Generated by Resistors From Different Positive Expiratory Pressure Devices.

Science.gov (United States)

Fagevik Olsén, Monika; Carlsson, Maria; Olsén, Erik; Westerdahl, Elisabeth

2015-10-01

Breathing exercises with positive expiratory pressure (PEP) are used to improve pulmonary function and airway clearance. Different PEP devices are available, but there have been no studies that describe the pressure generated by different resistors. The purpose of this study was to compare pressures generated from the proprietary resistor components of 4 commercial flow-dependent PEP valves with all other parameters kept constant. Resistors from 4 flow-regulated PEP devices (Pep/Rmt system, Wellspect HealthCare; Pipe P breathing exerciser, Koo Medical Equipment; Mini-PEP, Philips Respironics [including resistors by Rüsch]; and 15-mm endo-adapter, VBM Medizintechnik) were tested randomly by a blinded tester at constant flows of 10 and 18 L/min from an external gas system. All resistors were tested 3 times. Resistors with a similar diameter produced statistically significant different pressures at the same flow. The differences were smaller when the flow was 10 L/min compared with 18 L/min. The differences were also smaller when the diameter of the resistor was increased. The pressures produced by the 4 resistors of the same size were all significantly different when measuring 1.5- and 2.0-mm resistors at a flow of 10 L/min and 2.0-mm resistors at a flow of 18 L/min (P < .001). There were no significant differences between any of the resistors when testing sizes of 4.5 and 5.0 mm at either flow. The Mini-PEP and adapter resistors gave the highest pressures. Pressures generated by the different proprietary resistor components of 4 commercial PEP devices were not comparable, even though the diameter of the resistors is reported to be the same. The pressures generated were significantly different, particularly when using small-diameter resistors at a high flow. Therefore, the resistors may not be interchangeable. This is important information for clinicians, particularly when considering PEP for patients who do not tolerate higher pressures. Copyright © 2015 by

Stochastic Resonance Induced by Dichotomous Resistor in an Electric Circuit

International Nuclear Information System (INIS)

Li Jinghui; Han Yinxia

2007-01-01

An electric circuit with dichotomous resistor is investigated. It is shown that the amplitude of the average electric current washing the resistor represents the phenomenon of stochastic resonance, which is the response as a function of the correlation time of the dichotomous resistor.

Process for forming synapses in neural networks and resistor therefor

Science.gov (United States)

Fu, Chi Y.

1996-01-01

Customizable neural network in which one or more resistors form each synapse. All the resistors in the synaptic array are identical, thus simplifying the processing issues. Highly doped, amorphous silicon is used as the resistor material, to create extremely high resistances occupying very small spaces. Connected in series with each resistor in the array is at least one severable conductor whose uppermost layer has a lower reflectivity of laser energy than typical metal conductors at a desired laser wavelength.

Reliability growth of thin film resistors contact

Directory of Open Access Journals (Sweden)

Lugin A. N.

2010-10-01

Full Text Available Necessity of resistive layer growth under the contact and in the contact zone of resistive element is shown in order to reduce peak values of current flow and power dissipation in the contact of thin film resistor, thereby to increase the resistor stability to parametric and catastrophic failures.

30 CFR 57.12023 - Guarding electrical connections and resistor grids.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Guarding electrical connections and resistor... NONMETAL MINES Electricity Surface and Underground § 57.12023 Guarding electrical connections and resistor grids. Electrical connections and resistor grids that are difficult or impractical to insulate shall be...

30 CFR 56.12023 - Guarding electrical connections and resistor grids.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Guarding electrical connections and resistor... MINES Electricity § 56.12023 Guarding electrical connections and resistor grids. Electrical connections and resistor grids that are difficult or impractical to insulate shall be guarded, unless protection...

Adjustable thermal resistor by reversibly folding a graphene sheet.

Science.gov (United States)

Song, Qichen; An, Meng; Chen, Xiandong; Peng, Zhan; Zang, Jianfeng; Yang, Nuo

2016-08-11

Phononic (thermal) devices such as thermal diodes, thermal transistors, thermal logic gates, and thermal memories have been studied intensively. However, tunable thermal resistors have not been demonstrated yet. Here, we propose an instantaneously adjustable thermal resistor based on folded graphene. Through theoretical analysis and molecular dynamics simulations, we study the phonon-folding scattering effect and the dependence of thermal resistivity on the length between two folds and the overall length. Furthermore, we discuss the possibility of realizing instantaneously adjustable thermal resistors in experiment. Our studies bring new insights into designing thermal resistors and understanding the thermal modulation of 2D materials by adjusting basic structure parameters.

30 CFR 77.901-1 - Grounding resistor; continuous current rating.

Science.gov (United States)

2010-07-01

... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Grounding resistor; continuous current rating. 77.901-1 Section 77.901-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... resistor; continuous current rating. The ground fault current rating of grounding resistors shall meet the...

Resistor cooling in a vacuum

International Nuclear Information System (INIS)

Crittenden, R.; Krider, J.

1987-01-01

This note describes thermal measurements which were done on a resistor operating both in air at one atmosphere pressure and in a vacuum of a few milliTorr. The motivation for this measurement was our interest in operating a BGO crystal-photomultiplier tube-base assembly in a vacuum, as a synchrotron radiation detector to tag electrons in the MT beam. We wished to determine what fraction of the total resistor power was dissipated by convection in air, in order to know whether there would be excessive heating of the detector assembly in a vacuum. 3 figs

Babylonian Resistor Networks

Science.gov (United States)

Mungan, Carl E.; Lipscombe, Trevor C.

2012-01-01

The ancient Babylonians had an iterative technique for numerically approximating the values of square roots. Their method can be physically implemented using series and parallel resistor networks. A recursive formula for the equivalent resistance R[subscript eq] is developed and converted into a nonrecursive solution for circuits using…

Random-Resistor-Random-Temperature Kirchhoff-Law-Johnson-Noise (RRRT-KLJN Key Exchange

Directory of Open Access Journals (Sweden)

Kish Laszlo B.

2016-03-01

Full Text Available We introduce two new Kirchhoff-law-Johnson-noise (KLJN secure key distribution schemes which are generalizations of the original KLJN scheme. The first of these, the Random-Resistor (RR- KLJN scheme, uses random resistors with values chosen from a quasi-continuum set. It is well-known since the creation of the KLJN concept that such a system could work in cryptography, because Alice and Bob can calculate the unknown resistance value from measurements, but the RR-KLJN system has not been addressed in prior publications since it was considered impractical. The reason for discussing it now is the second scheme, the Random Resistor Random Temperature (RRRT- KLJN key exchange, inspired by a recent paper of Vadai, Mingesz and Gingl, wherein security was shown to be maintained at non-zero power flow. In the RRRT-KLJN secure key exchange scheme, both the resistances and their temperatures are continuum random variables. We prove that the security of the RRRT-KLJN scheme can prevail at a non-zero power flow, and thus the physical law guaranteeing security is not the Second Law of Thermodynamics but the Fluctuation-Dissipation Theorem. Alice and Bob know their own resistances and temperatures and can calculate the resistance and temperature values at the other end of the communication channel from measured voltage, current and power-flow data in the wire. However, Eve cannot determine these values because, for her, there are four unknown quantities while she can set up only three equations. The RRRT-KLJN scheme has several advantages and makes all former attacks on the KLJN scheme invalid or incomplete.

Temperature-controlled resistor

Science.gov (United States)

Perkins, T. G.

1969-01-01

Electrical resistance of a carbon-pile resistor is controlled by the compression or relaxation of a pile of carbon disks by a thermally actuated bimetallic spring. The concept is advantageous in that it is direct-acting, can cover a wide range of controllable characteristics, and can handle considerable power directly.

Universal Voltage Conveyor and Current Conveyor in Fast Full-Wave Rectifier

Directory of Open Access Journals (Sweden)

Josef Burian

2012-12-01

Full Text Available This paper deals about the design of a fast voltage-mode full-wave rectifier, where universal voltage conveyor and second-generation current conveyor are used as active elements. Thanks to the active elements, the input and output impedance of the non-linear circuit is infinitely high respectively zero in theory. For the rectification only two diodes and three resistors are required as passive elements. The performance of the circuit is shown on experimental measurement results showing the dynamic range, time response, frequency dependent DC transient value and RMS error for different values of input voltage amplitudes.

Investigation of OSL signal of resistors from mobile phones for accidental dosimetry

International Nuclear Information System (INIS)

Mrozik, A.; Marczewska, B.; Bilski, P.; Gieszczyk, W.

2014-01-01

Resistors from mobile phones, usually located near the human body, are considered as individual dosimeters of ionizing radiation in emergency situations. The resistors contain Al 2 O 3 , which is optically stimulated luminescence (OSL) material sensitive to ionizing radiation. This work is focused on determination of dose homogeneity within mobile phones which was carried out by OSL measurements of resistors placed in different parts inside the mobile phone. Separate, commercially available resistors, similar in the shape and size to the resistors from circuit board of the studied mobile phone, were situated in different locations inside it. The irradiations were performed in uniform 60 Co and 137 Cs radiation fields, with the mobile phones connected and not connected to the cellular network. The dose decrease of 9% was measured for original resistors situated between circuit board and battery, in comparison to the dose at the front of the phone. The resistors showed the lower signal when the mobile phone was connected to the cellular network, due to higher temperature inside the housing. The profile of fading was investigated within 3 month period for resistors irradiated with 1 Gy of gamma rays to estimate of the fading coefficient. - Highlights: • Impact of a mobile phone mode (switched on/off) on absorbed dose by resistors was showed. • The influence of the temperature during irradiation on absorbed dose was measured. • Dose distribution inside of a mobile phone was performed. • Fading factor of resistors was calculated

Thermal Characterization of the Overload Carbon Resistors

Directory of Open Access Journals (Sweden)

Ivana Kostić

2013-01-01

Full Text Available In many applications, the electronic component is not continuously but only intermittently overloaded (e.g., inrush current, short circuit, or discharging interference. With this paper, we provide insight into carbon resistors that have to hold out a rarely occurring transient overload. Using simple electrical circuit, the resistor is overheating with higher current than declared, and dissipation is observed by a thermal camera.

TI--CR--AL--O thin film resistors

Science.gov (United States)

Jankowski, Alan F.; Schmid, Anthony P.

2000-01-01

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Pinched hysteresis behavior in a PID-controlled resistor

Directory of Open Access Journals (Sweden)

M.A. Carrasco-Aguilar

2018-06-01

Full Text Available A current-controlled grounded resistor that exhibits a frequency-dependent pinched hysteresis loop is described. A mathematical model describing this behavior is derived and validated numerically, which has the form of a Proportional Integral-Derivative (PID controller. The proposed topology is build by using AD844 commercially available active device configured as second-generation current conveyor and experimental tests are compared with numerical simulations, showing a good agreement among them. Moreover, the proposed PID-controlled resistor can be reconfigured in order to be used in future applications such as programmable analog circuits. Keyword: Pinched hysteresis, Current conveyors, Nonlinear resistor, Proportional-Integral-Derivative Controller

Restrictions on modeling spin injection by resistor networks

OpenAIRE

Rashba, Emmanuel

2008-01-01

Because of the technical difficulties of solving spin transport equations in inhomogeneous systems, different resistor networks are widely applied for modeling spin transport. By comparing an analytical solution for spin injection across a ferromagnet - paramagnet junction with a resistor model approach, its essential limitations stemming from inhomogeneous spin populations are clarified.

Conceptual design of dump resistor for superconducting CS of SST-1

International Nuclear Information System (INIS)

Roy, Swati; Pradhan, Subrata; Panchal, Arun

2015-01-01

During the upgradation of SST-1, the resistive central solenoid (CS) coil has been planned to be replaced with Nb 3 Sn based superconducting coil. The superconducting CS will store upto 3.5MJ of magnetic energy per operation cycle with operating current upto 14kA. In case of coil quench, the energy stored in the coils is to be extracted rapidly with a time constant of 1.5s. This will be achieved by inserting a 20m Ohm dump resistor in series with the superconducting CS which is normally shorted by circuit breakers. As a vital part of the superconducting CS quench protection system, a conceptual design of the 20m Ohm dump resistor has been proposed. In this paper, the required design aspects and a dimensional layout of the dump resistor for the new superconducting CS has been presented. Natural air circulation is proposed as cooling method for this dump resistor. The basic structure of the proposed dump resistor comprises of stainless steel grids connected in series in the shape of meander to minimize the stray inductance and increase the surface area for cooling. The entire dump resistor will be an array of such grids connected in series and parallel to meet electrical as well as thermal parameters. The maximum temperature of the proposed dump resistor is upto 350 °C during dump 3.5MJ energy. The proposed design permits indigenous fabrication of the dump resistor using commercially available welding techniques. (author)

Low noise charge sensitive preamplifier DC stabilized without a physical resistor

Science.gov (United States)

Bertuccio, Giuseppe; Rehak, Pavel; Xi, Deming

1994-09-13

The invention is a novel charge sensitive preamplifier (CSP) which has no resistor in parallel with the feedback capacitor. No resetting circuit is required to discharge the feedback capacitor. The DC stabilization of the preamplifier is obtained by means of a second feedback loop between the preamplifier output and the common base transistor of the input cascode. The input transistor of the preamplifier is a Junction Field Transistor (JFET) with the gate-source junction forward biased. The detector leakage current flows into this junction. This invention is concerned with a new circuit configuration for a charge sensitive preamplifier and a novel use of the input Field Effect Transistor of the CSP itself. In particular this invention, in addition to eliminating the feedback resistor, eliminates the need for external devices between the detector and the preamplifier, and it eliminates the need for external circuitry to sense the output voltage and reset the CSP. Furthermore, the noise level of the novel CSP is very low, comparable with the performance achieved with other solutions. Experimental tests prove that this configuration for the charge sensitive preamplifier permits an excellent noise performance at temperatures including room temperature. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using a commercial JFET as input device of the preamplifier.

Improvement of Transient Stability of Power System by System Damping Series Resistor (SDSR)

OpenAIRE

上里, 勝実; 千住, 智信; 当銘, 秀之; 高原, 景滋; Uezato, Katsumi; Senjyu, Tomonobu; Toume, Hideyuki; Takahara, Keiji

1990-01-01

The system damping resistor is one of the method for improving the transient stability of power systems. The main circuit is the simple construction so that is low cost and is few abnormal surge, and is superior in ability of economy, reliability and maintenance. Conventionally, most of all system damping resistors have adopted the paralleled resistor, whereas the series resistor is used little.In this paper, we investigate the characteristics of the series resistor by comparing with the para...

Frequency dependence of the active impedance component of silicon thin-film resistors

International Nuclear Information System (INIS)

Belogurov, S.V.; Gostilo, V.V.; Yurov, A.S.

1987-01-01

A high-resistant resistor on the silicon thin-film substrate considerably superior in noise and frequency performance than commercial resistors is described. The frequency dependence of the active impedance component is tested for determining noise and frequency dependences of silicon thin-film resistors. The obtained results permit to calculate the energy equivalent of resistor noise in nuclear radiation detection units at any temperature according to its frequency characteristic at room temperature

Voltage-Mode All-Pass Filters Including Minimum Component Count Circuits

Directory of Open Access Journals (Sweden)

Sudhanshu Maheshwari

2007-01-01

Full Text Available This paper presents two new first-order voltage-mode all-pass filters using a single-current differencing buffered amplifier and four passive components. Each circuit is compatible to a current-controlled current differencing buffered amplifier with only two passive elements, thus resulting in two more circuits, which employ a capacitor, a resistor, and an active element, thus using a minimum of active and passive component counts. The proposed circuits possess low output impedance, and hence can be easily cascaded for voltage-mode systems. PSPICE simulation results are given to confirm the theory.

Electrooptic Methods for Measurement of Small DC Currents at High Voltage Level

DEFF Research Database (Denmark)

Tønnesen, Ole; Beatty, Neville; Skilbreid, Asbjørn Ottar

1989-01-01

collectors are connected via resistors RA and RB to the protective side of the voltage to be measured and the emitters to the negative side. The currents flowing in to the bases of the transistors are independently controlled by the light levels following on the two photodiodes PDA, PDB....

EPG waveform library for Graphocephala atropunctata (Hemiptera: Cicadellidae): Effect of adhesive, input resistor, and voltage levels on waveform appearance and stylet probing behaviors.

Science.gov (United States)

Cervantes, Felix A; Backus, Elaine A

2018-05-31

Blue-green sharpshooter, Graphocephala atropunctata, is a native California vector of Xylella fastidiosa (Xf), a foregut-borne bacterium that is the causal agent of Pierce's disease in grapevines. A 3rd-generation, AC-DC electropenetrograph (EPG monitor) was used to record stylet probing and ingestion behaviors of adult G. atropunctata on healthy grapevines. This study presents for the first time a complete, updated waveform library for this species, as well as effects of different electropenetrograph settings and adhesives on waveform appearances. Both AC and DC applied signals were used with input resistor (Ri) levels (amplifier sensitivities) of 10 6 , 10 7 , 10 8 and 10 9  Ohms, as well as two type of adhesives, conducting silver paint and handmade silver glue. Waveform description, characterization of electrical origins (R versus emf components), and proposed biological meanings of waveforms are reported, as well as qualitative differences in waveform appearances observed with different electropenetrograph settings and adhesives. In addition, a quantitative study with AC signal, using two applied voltage levels (50 and 200 mV) and two Ri levels (10 7 and 10 9  Ohms) was performed. Intermediate Ri levels 10 7 and 10 8  Ohms provided EPG waveforms with the greatest amount of information, because both levels captured similar proportions of R and emf components, as supported by appearance, clarity, and definition of waveforms. Similarly, use of a gold wire loop plus handmade silver glue provided more definition of waveforms than a gold wire loop plus commercial conducting silver paint. Qualitative/observational evidence suggested that AC applied signal caused fewer aberrant behaviors/waveforms than DC applied signal. In the quantitative study, behavioral components of the sharpshooter X wave were the most affected by changes in Ri and voltage level. Because the X wave probably represents X. fastidiosa inoculation behavior, future studies of X. fastidiosa

Studi Pengaruh Pengaman Galvanometer terhadap Keakuratan Hasil Pengukuran Resistor pada Jembatan Wheatstone Sederhana

OpenAIRE

Herlan, Dedeng

2014-01-01

Pengaman galvanometer pada penggunaan jembatan wheastone sebagai alat untuk mengukur besarkomponen resistor R dikembangkan pada penelitian ini. Pengaman galvanometer yang ditelitimemakai bahan resistor yang telah tersedia di pasaran dengan berbagai ukuran. . Berdasarkanbentuk strukturnya yang khas dari sebuah jembatan wheatstone, resistor yang digunakan sebagaipengaman galvanometer dalam penelitian ini, yaitu susunan resistor variabel R3 dan R4dengantipe L yang mengapit salah s...

Air-cooled fast discharge resistors for ITER magnets

International Nuclear Information System (INIS)

Tanchuk, Victor; Grigoriev, Sergey; Lokiev, Vladimir; Roshal, Alexander; Song, Inho; Buzykin, Oleg

2011-01-01

The ITER superconducting magnets will store up to 50 GJ of magnetic energy per operation cycle. In case of coil quench the energy stored in the coils must be extracted rapidly with a time constant from 7.5 to 14 s. It will be achieved by fast discharge resistors (FDR) normally bridged by circuit breakers and inserted in series with the superconducting coils. The fast discharge of the coils results practically in adiabatic heating of the resistive elements up to 200-300 deg. C. The resistors need to be cooled to the initial temperature over 6-8 h. Natural air circulation is proposed as a cooling method. In order to simulate the temperature response of the resistors to energy released in the resistive plates and to demonstrate their cooling capability within the required time by natural air circulation the numerical model of the resistor cooling circuit has been developed. As the calculations have shown, the developed FDR cooling system based on cooling by natural air circulation is capable of providing the required temperature operation regime of FDRs, but the supply channels are to be optimized so that the cooling time does not exceed the permissible one.

A low-cost DAC BIST structure using a resistor loop.

Directory of Open Access Journals (Sweden)

Jaewon Jang

Full Text Available This paper proposes a new DAC BIST (digital-to-analog converter built-in self-test structure using a resistor loop known as a DDEM ADC (deterministic dynamic element matching analog-to-digital converter. Methods for both switch reduction and switch effect reduction are proposed for solving problems related to area overhead and accuracy of the conventional DAC BIST. The proposed BIST modifies the length of each resistor in the resistor loop via a merging operation and reduces the number of switches and resistors. In addition, the effect of switches is mitigated using the proposed switch effect reduction method. The accuracy of the proposed BIST is demonstrated by the reduction in the switch effect. The experimental results show that the proposed BIST reduces resource usages and the mismatch error caused by the switches.

A low-cost DAC BIST structure using a resistor loop.

Science.gov (United States)

Jang, Jaewon; Kim, Heetae; Kang, Sungho

2017-01-01

This paper proposes a new DAC BIST (digital-to-analog converter built-in self-test) structure using a resistor loop known as a DDEM ADC (deterministic dynamic element matching analog-to-digital converter). Methods for both switch reduction and switch effect reduction are proposed for solving problems related to area overhead and accuracy of the conventional DAC BIST. The proposed BIST modifies the length of each resistor in the resistor loop via a merging operation and reduces the number of switches and resistors. In addition, the effect of switches is mitigated using the proposed switch effect reduction method. The accuracy of the proposed BIST is demonstrated by the reduction in the switch effect. The experimental results show that the proposed BIST reduces resource usages and the mismatch error caused by the switches.

Capturing power at higher voltages from arrays of microbial fuel cells without voltage reversal

KAUST Repository

Kim, Younggy

2011-01-01

Voltages produced by microbial fuel cells (MFCs) cannot be sustainably increased by linking them in series due to voltage reversal, which substantially reduces stack voltages. It was shown here that MFC voltages can be increased with continuous power production using an electronic circuit containing two sets of multiple capacitors that were alternately charged and discharged (every one second). Capacitors were charged in parallel by the MFCs, but linked in series while discharging to the circuit load (resistor). The parallel charging of the capacitors avoided voltage reversal, while discharging the capacitors in series produced up to 2.5 V with four capacitors. There were negligible energy losses in the circuit compared to 20-40% losses typically obtained with MFCs using DC-DC converters to increase voltage. Coulombic efficiencies were 67% when power was generated via four capacitors, compared to only 38% when individual MFCs were operated with a fixed resistance of 250 Ω. The maximum power produced using the capacitors was not adversely affected by variable performance of the MFCs, showing that power generation can be maintained even if individual MFCs perform differently. Longer capacitor charging and discharging cycles of up to 4 min maintained the average power but increased peak power by up to 2.6 times. These results show that capacitors can be used to easily obtain higher voltages from MFCs, allowing for more useful capture of energy from arrays of MFCs. © 2011 The Royal Society of Chemistry.

Indium Tin Oxide Resistor-Based Nitric Oxide Microsensors

Science.gov (United States)

Xu, Jennifer C.; Hunter, Gary W.; Gonzalez, Jose M., III; Liu, Chung-Chiun

2012-01-01

A sensitive resistor-based NO microsensor, with a wide detection range and a low detection limit, has been developed. Semiconductor microfabrication techniques were used to create a sensor that has a simple, robust structure with a sensing area of 1.10 0.99 mm. A Pt interdigitated structure was used for the electrodes to maximize the sensor signal output. N-type semiconductor indium tin oxide (ITO) thin film was sputter-deposited as a sensing material on the electrode surface, and between the electrode fingers. Alumina substrate (250 m in thickness) was sequentially used for sensor fabrication. The resulting sensor was tested by applying a voltage across the two electrodes and measuring the resulting current. The sensor was tested at different concentrations of NO-containing gas at a range of temperatures. Preliminary results showed that the sensor had a relatively high sensitivity to NO at 450 C and 1 V. NO concentrations from ppm to ppb ranges were detected with the low limit of near 159 ppb. Lower NO concentrations are being tested. Two sensing mechanisms were involved in the NO gas detection at ppm level: adsorption and oxidation reactions, whereas at ppb level of NO, only one sensing mechanism of adsorption was involved. The NO microsensor has the advantages of high sensitivity, small size, simple batch fabrication, high sensor yield, low cost, and low power consumption due to its microsize. The resistor-based thin-film sensor is meant for detection of low concentrations of NO gas, mainly in the ppb or lower range, and is being developed concurrently with other sensor technology for multispecies detection. This development demonstrates that ITO is a sensitive sensing material for NO detection. It also provides crucial information for future selection of nanostructured and nanosized NO sensing materials, which are expected to be more sensitive and to consume less power.

Compact chromium oxide thin film resistors for use in nanoscale quantum circuits

Energy Technology Data Exchange (ETDEWEB)

Nash, C. R.; Fenton, J. C.; Constantino, N. G. N.; Warburton, P. A. [London Centre for Nanotechnology, UCL, 17–19 Gordon Street, London WC1H 0AH (United Kingdom)

2014-12-14

We report on the electrical characterisation of a series of thin amorphous chromium oxide (CrO{sub x}) films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the CrO{sub x} films was varied from 28 Ω/◻ to 32.6 kΩ/◻. The variation in resistance with cooling to 4.2 K in liquid helium was investigated; the sheet resistance at 4.2 K varied with composition from 65 Ω/◻ to above 20 GΩ/◻. All of the films measured displayed linear current–voltage characteristics at all measured temperatures. For on-chip devices for quantum phase-slip measurements using niobium–silicon nanowires, interfaces between niobium–silicon and chromium oxide are required. We also characterised the contact resistance for one CrO{sub x} composition at an interface with niobium–silicon. We found that a gold intermediate layer is favourable: the specific contact resistivity of chromium-oxide-to-gold interfaces was 0.14 mΩcm{sup 2}, much lower than the value for direct CrO{sub x} to niobium–silicon contact. We conclude that these chromium oxide films are suitable for use in nanoscale circuits as high-value resistors, with resistivity tunable by oxygen content.

Simple Cell Balance Circuit

Science.gov (United States)

Johnson, Steven D.; Byers, Jerry W.; Martin, James A.

2012-01-01

A method has been developed for continuous cell voltage balancing for rechargeable batteries (e.g. lithium ion batteries). A resistor divider chain is provided that generates a set of voltages representing the ideal cell voltage (the voltage of each cell should be as if the cells were perfectly balanced). An operational amplifier circuit with an added current buffer stage generates the ideal voltage with a very high degree of accuracy, using the concept of negative feedback. The ideal voltages are each connected to the corresponding cell through a current- limiting resistance. Over time, having the cell connected to the ideal voltage provides a balancing current that moves the cell voltage very close to that ideal level. In effect, it adjusts the current of each cell during charging, discharging, and standby periods to force the cell voltages to be equal to the ideal voltages generated by the resistor divider. The device also includes solid-state switches that disconnect the circuit from the battery so that it will not discharge the battery during storage. This solution requires relatively few parts and is, therefore, of lower cost and of increased reliability due to the fewer failure modes. Additionally, this design uses very little power. A preliminary model predicts a power usage of 0.18 W for an 8-cell battery. This approach is applicable to a wide range of battery capacities and voltages.

Solar Energy Measurement Using Arduino

OpenAIRE

Jumaat Siti Amely; Othman Mohamad Hilmi

2018-01-01

This project aims to develop a measurement of solar energy using Arduino Board technology. In this research, four parameters that been measured are temperature, light intensity, voltage and current. The temperature was measured using temperature sensor. The light intensity was measured using light dependent resistor (LDR) sensor. The voltage was measured using the voltage divider because the voltage generated by the solar panel are large for the Arduino as receiver. Lastly for the current was...

Variable thermal resistor based on self-powered Peltier effect

OpenAIRE

Min, Gao; Yatim, N. M.

2008-01-01

Heat flow through a thermoelectric material or device can be varied by an electrical resistor connected in parallel to it. This phenomenon is exploited to design a novel thermal component-variable thermal resistor. The theoretical background to this novel application is provided and an experimental result to demonstrate its feasibility is reported.

Design of high voltage power supply of miniature X-ray tube based on resonant Royer

International Nuclear Information System (INIS)

Liu Xiyao; Zeng Guoqiang; Tan Chengjun; Luo Qun; Gong Chunhui; Huang Rui

2013-01-01

Background: In recent years, X rays are widely used in various fields. With the rapid development of national economy, the demand of high quality, high reliability, and high stability miniature X-ray tube has grown rapidly. As an important core component of miniature X-ray tube, high voltage power supply has attracted wide attention. Purpose: To match miniature, the high voltage power supply should be small, lightweight, good quality, etc. Based on the basic performance requirements of existing micro-X-ray tube high voltage power supply, this paper designs an output from 0 to -30 kV adjustable miniature X-ray tube voltage DC power supply. Compared to half-bridge and full-bridge switching-mode power supply, its driving circuit is simple. With working on the linear condition, it has no switching noise. Methods: The main circuit makes use of DC power supply to provide the energy. The resonant Royer circuit supplies sine wave which drives to the high frequency transformer's primary winding with resultant sine-like high voltage appearing across the secondary winding. Then, the voltage doubling rectifying circuit would achieve further boost. In the regulator circuit, a feedback control resonant transistor base current is adopted. In order to insulate air, a silicone rubber is used for high pressure part packaging, and the output voltage is measured by the dividing voltage below -5 kV. Results: The stability of circuit is better than 0.2%/6 h and the percent of the output ripple voltage is less than 0.3%. Keeping the output voltage constant, the output current can reach 57 μA by changing the size of load resistor. This high voltage power supply based on resonant Royer can meet the requirement of miniature X-ray tube. Conclusions: The circuit can satisfy low noise, low ripple, low power and high voltage regulator power supply design. However, its efficiency is not high enough because of the linear condition. In the next design, to further reduce power consumption, we

High-ohmic low-noise resistor for spectrometers with cooled semiconductor detectors

International Nuclear Information System (INIS)

Baldin, S.A.; Zhargal, Ch.; Zorin, G.N.; Laskus, T.; Osipenko, B.P.; Revenko, A.V.; Ryakhovskaya, T.I.

1985-01-01

BackgroUnd noise and energy resolution of a new type of resistors, designed to be used as a resistance in a feedback circuit of an X-ray spectrometer preamplifier are studied. The resistors are manufactured using the method of photolithography from high-resistance films, formed on the surface of lead-silicate glasses, as a result of redox processes during heat treatment in hydrogen atmosphere. Energy resolution of the spectrometer is measured on the line 55 FeKX(Mn) with the energy 5.8 keV. The conclusion is made, that the level of background noises in the resistors studied is approximately 4 times lower the level of noises in the KVM type resistors, which are commercially produced in industry

Versatile tunable current-mode universal biquadratic filter using MO-DVCCs and MOSFET-based electronic resistors.

Science.gov (United States)

Chen, Hua-Pin

2014-01-01

This paper presents a versatile tunable current-mode universal biquadratic filter with four-input and three-output employing only two multioutput differential voltage current conveyors (MO-DVCCs), two grounded capacitors, and a well-known method for replacement of three grounded resistors by MOSFET-based electronic resistors. The proposed configuration exhibits high-output impedance which is important for easy cascading in the current-mode operations. The proposed circuit can be used as either a two-input three-output circuit or a three-input single-output circuit. In the operation of two-input three-output circuit, the bandpass, highpass, and bandreject filtering responses can be realized simultaneously while the allpass filtering response can be easily obtained by connecting appropriated output current directly without using additional stages. In the operation of three-input single-output circuit, all five generic filtering functions can be easily realized by selecting different three-input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no inverting-type input current signals are imposed. All the passive and active sensitivities are low. Postlayout simulations were carried out to verify the functionality of the design.

Versatile Tunable Current-Mode Universal Biquadratic Filter Using MO-DVCCs and MOSFET-Based Electronic Resistors

Directory of Open Access Journals (Sweden)

Hua-Pin Chen

2014-01-01

Full Text Available This paper presents a versatile tunable current-mode universal biquadratic filter with four-input and three-output employing only two multioutput differential voltage current conveyors (MO-DVCCs, two grounded capacitors, and a well-known method for replacement of three grounded resistors by MOSFET-based electronic resistors. The proposed configuration exhibits high-output impedance which is important for easy cascading in the current-mode operations. The proposed circuit can be used as either a two-input three-output circuit or a three-input single-output circuit. In the operation of two-input three-output circuit, the bandpass, highpass, and bandreject filtering responses can be realized simultaneously while the allpass filtering response can be easily obtained by connecting appropriated output current directly without using additional stages. In the operation of three-input single-output circuit, all five generic filtering functions can be easily realized by selecting different three-input current signals. The filter permits orthogonal controllability of the quality factor and resonance angular frequency, and no inverting-type input current signals are imposed. All the passive and active sensitivities are low. Postlayout simulations were carried out to verify the functionality of the design.

Electrical properties and conduction mechanisms of Ru-based thick-film (cermet) resistors

International Nuclear Information System (INIS)

Pike, G.E.; Seager, C.H.

1977-01-01

This paper presents an experimental study of the electrical conduction mechanisms in thick-film (cermet) resistor. The resistors were made from one custom and three commercially formulated inks with sheet resistivities ranging from 10 2 to 10 6 Ω/D 7 Alembertian in decade increments. Their microstructure and composition have been examined using optical and scanning electron microscopy, electron microprobe analysis, x-ray diffraction, and various chemical analyses. This portion of our study shows that the resistors are heterogeneous mixtures of metallic metal oxide particles (approx.4 x 10 -5 cm in diameter) and a lead silicate glass. The metal oxide particles are ruthenium containing pyrochlores, and are joined to form a continuous three-dimensional network of chain segments. The principal experimental work reported here is an extensive study of the electrical transport properties of the resistors. The temperature dependence of conductance has been measured from 1.2 to 400 K, and two features common to all resistors are found. There is a pronounced decrease in conductance at low temperatures and a shallow maximum at several hundred Kelvin. Within the same range of temperatures the reversible conductance as a function of electric field from 0 to 28 kV/cm has been studied. The resistors are non-Ohmic at all temperatures, but particularly at cryogenic temperatures for low fields. At higher fields the conductance shows a linear variation with electric field. The thick-film resistors are found to have a small dielectric constant and a (nearly) frequency-independent conductance from dc to 50 MHz. The magnetoresistance to 100 kG, the Hall mobility, and the Seebeck coefficient of most of the resistors have been measured and discovered to be quite small. Many of the electrical transport properties have also been determined for the metal oxide particles which were extracted from the fired resistors

A high PSRR Class-D audio amplifier IC based on a self-adjusting voltage reference

OpenAIRE

Huffenus , Alexandre; Pillonnet , Gaël; Abouchi , Nacer; Goutti , Frédéric; Rabary , Vincent; Cittadini , Robert

2010-01-01

International audience; In a wide range of applications, audio amplifiers require a large Power Supply Rejection Ratio (PSRR) that the current Class-D architecture cannot reach. This paper proposes a self-adjusting internal voltage reference scheme that sets the bias voltages of the amplifier without losing on output dynamics. This solution relaxes the constraints on gain and feedback resistors matching that were previously the limiting factor for the PSRR. Theory of operation, design and IC ...

Variable thermal resistor based on self-powered Peltier effect

International Nuclear Information System (INIS)

Min Gao; Yatim, N Md

2008-01-01

Heat flow through a thermoelectric material or device can be varied by an electrical resistor connected in parallel to it. This phenomenon is exploited to design a novel thermal component-variable thermal resistor. The theoretical background to this novel application is provided and an experimental result to demonstrate its feasibility is reported. (fast track communication)

OFCC based voltage and transadmittance mode instrumentation amplifier

Science.gov (United States)

Nand, Deva; Pandey, Neeta; Pandey, Rajeshwari; Tripathi, Prateek; Gola, Prashant

2017-07-01

The operational floating current conveyor (OFCC) is a versatile active block due to the availability of both low and high input and output impedance terminals. This paper addresses the realization of OFCC based voltage and transadmittance mode instrumentation amplifiers (VMIA and TAM IA). It employs three OFCCs and seven resistors. The transadmittance mode operation can easily be obtained by simply connecting an OFCC based voltage to current converter at the output. The effect of non-idealities of OFCC, in particular finite transimpedance and tracking error, on system performance is also dealt with and corresponding mathematical expressions are derived. The functional verification is performed through SPICE simulation using CMOS based implementation of OFCC.

Contact materials for thermostable resistors on the base of Ni-Re alloy

International Nuclear Information System (INIS)

Yusipov, H.Yu.; Glasman, L.I.; Arskaya, E.P.; Lazarev, Eh.M.; Korotkov, N.A.

1979-01-01

Given are the electron diffraction analysis results and the operational characteristics of the contact materials, used in the heat-resistant thin-filmed resistors (TFR), made on the basis of the Ni-Re system alloy. The results are compared with the pure nickel. Operational tests of the thin-filmed resistors, having (NR10-VP) alloy contacts, showed that the departure of the resistors nominals is almost twice as small as that for the resistors, having pure nickel contacts. The use of this alloy permits to increase the thermal stability and durability of the TFRs, if they are used under extreme conditions

Load Insensitive, Low Voltage Quadrature Oscillator Using Single Active Element

Directory of Open Access Journals (Sweden)

Jitendra Mohan

2017-01-01

Full Text Available In this paper, a load insensitive quadrature oscillator using single differential voltage dual-X second generation current conveyor operated at low voltage is proposed. The proposed circuit employs single active element, three grounded resistors and two grounded capacitors. The proposed oscillator offers two load insensitive quadrature current outputs and three quadrature voltage outputs simultaneously. Effects of non-idealities along with the effects of parasitic are further studied. The proposed circuit enjoys the feature of low active and passive sensitivities. Additionally, a resistorless realization of the proposed quadrature oscillator is also explored. Simulation results using PSPICE program on cadence tool using 90 nm Complementary Metal Oxide Semiconductor (CMOS process parameters confirm the validity and practical utility of the proposed circuit.

Effects of surfaces on resistor percolation.

Science.gov (United States)

Stenull, O; Janssen, H K; Oerding, K

2001-05-01

We study the effects of surfaces on resistor percolation at the instance of a semi-infinite geometry. Particularly we are interested in the average resistance between two connected ports located on the surface. Based on general grounds as symmetries and relevance we introduce a field theoretic Hamiltonian for semi-infinite random resistor networks. We show that the surface contributes to the average resistance only in terms of corrections to scaling. These corrections are governed by surface resistance exponents. We carry out renormalization-group improved perturbation calculations for the special and the ordinary transition. We calculate the surface resistance exponents phiS and phiS(infinity) for the special and the ordinary transition, respectively, to one-loop order.

Design and study of photomultiplier pulse-shaping amplifier powered by the current flowing through a voltage divider

International Nuclear Information System (INIS)

Vladimir Popov

2003-01-01

A new version of Photomultiplier Tube (PMT) pulse amplifier, entirely powered by the current flowing through the base voltage divider, was designed and tested. This amplifier was designed for application in the JLAB G0 Experiment E00-006 as a part of high voltage base for XP2262 Photonis PMT. According to JLAB G0 experiment requirement, these PMT's operate with plastic scintillators at high counting rate (about MHz). Tests in JLAB experimental Hall C indicate that low energy gamma background cause up to 0.1 mA of PMT average anode current (without amplifier). At this radiation condition, PMT gain decreases by 50% within about 1 month of operation. The amplifier needs to reduce PMT anode current and to shape PMT anode pulse prior to sending it through a long cable line (more then 400 ft of RG-213 and RG-58 coax cables). Shaping of the PMT output pulse helps to reduce attenuation effect of the long cable line without significant reduction of timing accuracy. The results of this study of designed amplifier and PMT plus amplifier system are presented

Pressure-Sensitive Resistor Material

Science.gov (United States)

Du Fresne, E. R.

1986-01-01

Low-conductivity particles in rubber offer wide dynamic range. Sensor consists of particles of relatively low conductivity embedded in rubber. Resistance of sensor decreases by about 100 times as pressure on it increases from zero to 0.8 MN/M to the second power. Resistor promising candidate as tactile sensor for robots and remote manipulators.

Algorithm оf Computer Model Realization оf High-Frequency Processes in Switchgears Containing Non-Linear Over-Voltage Limiters

Directory of Open Access Journals (Sweden)

Ye. V. Dmitriev

2007-01-01

Full Text Available Analysis of the Over-Voltage Limiter (OVL influence on electromagnetic high-frequency over-voltages at commutations with isolators of unloaded sections of wires and possibility of application of a frequency-dependent resistor in case of necessity to facilitate OVL operation conditions is provided in the paper.It is shown that it is necessary to take into account characteristics of OVL by IEEE circuit and its modifications at computer modeling of high-frequency over-voltages.

Spectroscopic measurements with a silicon drift detector having a continuous implanted drift cathode-voltage divider

CERN Document Server

Bonvicini, V; D'Acunto, L; Franck, D; Gregorio, A; Pihet, P; Rashevsky, A; Vacchi, A; Vinogradov, L I; Zampa, N

2000-01-01

A silicon drift detector (SDD) prototype where the drift electrode also plays the role of a high-voltage divider has been realised and characterised for spectroscopic applications at near-room temperatures. Among the advantages of this design, is the absence of metal on the sensitive surface which makes this detector interesting for soft X-rays. The detector prototype has a large sensitive area (2x130 mm sup 2) and the charge is collected by two anodes (butterfly-like detector). The energy resolution of a such a detector has been investigated at near-room temperatures using a commercial, hybrid, low-noise charge-sensitive preamplifier. The results obtained for the X-ray lines from sup 5 sup 5 Fe and sup 2 sup 4 sup 1 Am are presented.

An HIV feedback resistor: auto-regulatory circuit deactivator and noise buffer.

Science.gov (United States)

Weinberger, Leor S; Shenk, Thomas

2007-01-01

Animal viruses (e.g., lentiviruses and herpesviruses) use transcriptional positive feedback (i.e., transactivation) to regulate their gene expression. But positive-feedback circuits are inherently unstable when turned off, which presents a particular dilemma for latent viruses that lack transcriptional repressor motifs. Here we show that a dissipative feedback resistor, composed of enzymatic interconversion of the transactivator, converts transactivation circuits into excitable systems that generate transient pulses of expression, which decay to zero. We use HIV-1 as a model system and analyze single-cell expression kinetics to explore whether the HIV-1 transactivator of transcription (Tat) uses a resistor to shut off transactivation. The Tat feedback circuit was found to lack bi-stability and Tat self-cooperativity but exhibited a pulse of activity upon transactivation, all in agreement with the feedback resistor model. Guided by a mathematical model, biochemical and genetic perturbation of the suspected Tat feedback resistor altered the circuit's stability and reduced susceptibility to molecular noise, in agreement with model predictions. We propose that the feedback resistor is a necessary, but possibly not sufficient, condition for turning off noisy transactivation circuits lacking a repressor motif (e.g., HIV-1 Tat). Feedback resistors may be a paradigm for examining other auto-regulatory circuits and may inform upon how viral latency is established, maintained, and broken.

Improvement of SET variability in TaO x based resistive RAM devices

Science.gov (United States)

Schönhals, Alexander; Waser, Rainer; Wouters, Dirk J.

2017-11-01

Improvement or at least control of variability is one of the key challenges for Redox based resistive switching memory technology. In this paper, we investigate the impact of a serial resistor as a voltage divider on the SET variability in Pt/Ta2O5/Ta/Pt nano crossbar devices. A partial RESET in a competing complementary switching (CS) mode is identified as a possible failure mechanism of bipolar switching SET in our devices. Due to a voltage divider effect, serial resistance value shows unequal impact on switching voltages of both modes which allows for a selective suppression of the CS mode. The impact of voltage divider on SET variability is demonstrated. A combination of appropriate write voltage and serial resistance allows for a significant improvement of the SET variability.

Z80 based voltage and temperature monitor for the Main Ring control crate: the CC48 card

International Nuclear Information System (INIS)

Seino, K.

1982-06-01

Several years ago, there seemed to be a need to monitor the power supply voltages and temperatures in the three bay racks of the Main Ring service buildings. A few years ago, another engineer seemed to have done a preliminary design using analog voltage comparators. In late 1979, it was proposed to use a microprocessor instead of analog voltage comparators. It was dramatic that all the people at a meeting were excited about the idea and unanimously approved the project. The author can remember some of the reasons why they were so enthusiastic about the idea at the time, i.e., (1) it was new to have microprocessor based cards on the Main Ring control system, (2) programmable alarm limits were preferred to resistor dividers or potentiometers with analog voltage comparators, (3) it was the first to try the communication between a host computer and distributed intelligent cards. The author started the design on the CC48 in January, 1980 and completed in April, 1980. We had the prototype card working in July, 1980 and tested the card on the system in September, 1980. Seven CC48s of the pilot production were installed in July, 1981. We mass-produced 35 more cards and finished installing them around the Main Ring in May, 1982. The author talks about the hardware, software and operation on the CC48 card, and he will make some remarks on his experience on the project

A compact, all solid-state LC high voltage generator.

Science.gov (United States)

Fan, Xuliang; Liu, Jinliang

2013-06-01

LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

A dc carpet cloak based on resistor networks.

Science.gov (United States)

Mei, Zhong Lei; Liu, Yu Sha; Yang, Fan; Cui, Tie Jun

2012-11-05

We propose, design, and implement a two-dimensional dc carpet cloak for steady electric field using the transformation optics (TO) method. Based on the circuit theory, we introduce a resistor network to mimic the resulting anisotropic conducting medium. The experimental prototype is fabricated using metal film resistors, and the measured results agree perfectly well with theoretical predictions. This study gives the first experimental verification of a dc carpet cloak, which expands the application of TO theory, and has potential applications in related areas.

Simple programmable voltage reference for low frequency noise measurements

Science.gov (United States)

Ivanov, V. E.; Chye, En Un

2018-05-01

The paper presents a circuit design of a low-noise voltage reference based on an electric double-layer capacitor, a microcontroller and a general purpose DAC. A large capacitance value (1F and more) makes it possible to create low-pass filter with a large time constant, effectively reducing low-frequency noise beyond its bandwidth. Choosing the optimum value of the resistor in the RC filter, one can achieve the best ratio between the transient time, the deviation of the output voltage from the set point and the minimum noise cut-off frequency. As experiments have shown, the spectral density of the voltage at a frequency of 1 kHz does not exceed 1.2 nV/√Hz the maximum deviation of the output voltage from the predetermined does not exceed 1.4 % and depends on the holding time of the previous value. Subsequently, this error is reduced to a constant value and can be compensated.

An Enhanced LVRT Scheme for DFIG-based WECSs under Both Balanced and Unbalanced Grid Voltage Sags

DEFF Research Database (Denmark)

Mohammadi, Jafar; Afsharnia, Saeed; Ebrahimzadeh, Esmaeil

2017-01-01

reactive power into the grid. The passive compensator is based on a three-phase stator damping resistor (SDR) located in series with the stator windings. The proposed scheme decreases the negative effects of grid voltage sags in the DFIG system including the rotor over-currents, electromagnetic torque...

Improved cryo-resistors with low temperature coefficients

International Nuclear Information System (INIS)

Warnecke, P.; Braun, E.

1989-01-01

A new type of 10- and 12.9κΩ cryo-resistors operating in a liquid helium bath with small temperature coefficient of resistivity have been built. Details for the fabrication of these improved cryo-resistors are reported. Experimental evidence of their drift rates are on the order of a few parts in 10 9 per day. A reduction of the mean pressure of 98.7 kPa in the helium dewar to 86.1 kPa, corresponding to a temperature decrease from 4.19 to 4.07 Κ, did not change the resistance value by more than the experimental resolution of 4 parts in 10 8

Scaling law of resistance fluctuations in stationary random resistor networks

Science.gov (United States)

Pennetta; Trefan; Reggiani

2000-12-11

In a random resistor network we consider the simultaneous evolution of two competing random processes consisting in breaking and recovering the elementary resistors with probabilities W(D) and W(R). The condition W(R)>W(D)/(1+W(D)) leads to a stationary state, while in the opposite case, the broken resistor fraction reaches the percolation threshold p(c). We study the resistance noise of this system under stationary conditions by Monte Carlo simulations. The variance of resistance fluctuations is found to follow a scaling law |p-p(c)|(-kappa(0)) with kappa(0) = 5.5. The proposed model relates quantitatively the defectiveness of a disordered media with its electrical and excess-noise characteristics.

Voltage Mode Universal Biquad Using CCCII

Directory of Open Access Journals (Sweden)

Ashish Ranjan

2011-01-01

Full Text Available This paper proposes a multi-input single-output (MISO second-order active-C voltage mode (VM universal filter using two second-generation current-controlled current conveyors (CCCIIs and two equal-valued capacitors. The proposed circuit realizes low pass, band pass, high pass, all pass, and notch responses from the same topology. The filter uses-minimum number of passive components and no resistor which is suitable for IC Design. The filter enjoys low-sensitivity performance and exhibits electronic and orthogonal tunability of pole frequency (0 and quality factor (0 via bias current of CCCIIs. PSPICE simulation results confirm the theory.

Fabrication and voltage divider operation of a T flip-flop using high-Tc interface-engineered Josephson junctions

International Nuclear Information System (INIS)

Kim, JunHo; Kim, Sang Hyeob; Sung, Gun Yong

2002-01-01

We designed and fabricated a rapid-single-flux-quantum T flip-flop (TFF) with high-T c interface-engineered Josephson junctions. Y 1 Ba 2 Cu 3 O 7-d and Sr 2 AlTaO 6 were deposited for the superconducting layer and the insulating layer, respectively. The Josephson junction was formed through an interface treatment process using Ar ion milling and vacuum annealing. We simulated a TFF circuit and designed a physical layout using WRspice and Xic. The fabricated TFF has a minimum junction width of 3 μ m. Through the measurement of the voltage divider operation, the maximum operation frequency was estimated to be 53 GHz at 22 K and 106 GHz at 12 K. (author)

A Ratiometric Method for Johnson Noise Thermometry Using a Quantized Voltage Noise Source

Science.gov (United States)

Nam, S. W.; Benz, S. P.; Martinis, J. M.; Dresselhaus, P.; Tew, W. L.; White, D. R.

2003-09-01

Johnson Noise Thermometry (JNT) involves the measurement of the statistical variance of a fluctuating voltage across a resistor in thermal equilibrium. Modern digital techniques make it now possible to perform many functions required for JNT in highly efficient and predictable ways. We describe the operational characteristics of a prototype JNT system which uses digital signal processing for filtering, real-time spectral cross-correlation for noise power measurement, and a digitally synthesized Quantized Voltage Noise Source (QVNS) as an AC voltage reference. The QVNS emulates noise with a constant spectral density that is stable, programmable, and calculable in terms of known parameters using digital synthesis techniques. Changes in analog gain are accounted for by alternating the inputs between the Johnson noise sensor and the QVNS. The Johnson noise power at a known temperature is first balanced with a synthesized noise power from the QVNS. The process is then repeated by balancing the noise power from the same resistor at an unknown temperature. When the two noise power ratios are combined, a thermodynamic temperature is derived using the ratio of the two QVNS spectral densities. We present preliminary results where the ratio between the gallium triple point and the water triple point is used to demonstrate the accuracy of the measurement system with a standard uncertainty of 0.04 %.

Remote Experiments in Resistor Measurement

Directory of Open Access Journals (Sweden)

Popescu Viorel

2009-10-01

Full Text Available The paper describes blended learningapproach to teaching resistor measurement. It is basedon “Learning by Doing” paradigm: interacticesimulation, laboratory plants, real experimentsaccessed by Web Publishing Tools under LabVIEW.Studying and experimenting access is opened for 24hours a day, 7 days a week under Moodle bookingsystem.

Rational and irrational numbers from unit resistors

International Nuclear Information System (INIS)

Kasperski, Maciej; Kłobus, Waldemar

2014-01-01

We address the problem of constructing a network of unit resistors such that it enables the retrieval of an arbitrary value of equivalent resistance. In particular, we employ the notion of continued fractions to construct a ladder network by which we can easily obtain any fractional value resistance. In addition, since any irrational number is associated with an infinite continued fraction, we discuss the convergence of the equivalent resistance of an infinite resistive ladder and various aspects concerning the approximations of arbitrary numbers attained by adding additional resistors successively to the network. The presented methods can be easily implemented in an educational laboratory and offer an interesting addition to the topic of Ohm’s law. (paper)

Switching phase states in two van der Pol oscillators coupled by ttochastically time-varying resistor

OpenAIRE

Uwate, Y; Nishio, Y; Stoop, R

2009-01-01

We explore the synchronization and switching behavior of a system of two identical van der Pol oscillators coupled by a stochastically timevarying resistor. Triggered by the time-varying resistor, the system of oscillators switches between synchronized and anti-synchronized behavior. We find that the preference of the synchronized/antisynchronized state is determined by the ratio of the probabilities of the two resistor states. The length of the phases of maintained resistor states, however, ...

Free-standing silicon micro machined resistors from (110) substrate

International Nuclear Information System (INIS)

Bernardini, R.; Diligenti, A.; Nannini, A.; Piotto, M.

1998-01-01

A simple process to obtain silicon planes released from the substrate and provided with large area pads for ohmic contacts is described. Resistors 500 μm long with a 40 μm x 1 μm cross section were obtained. Resistance measurements showed that the current flows in a reduced cross section, probably owing to the presence of a superficial depletion layer. Preliminary magnetoresistance measurements are presented. Reduction of the resistor cross section can be obtained by thermal oxidation

Measurements of Voltage Harmonics in 400 kV Transmission Network

Directory of Open Access Journals (Sweden)

Ryszard Pawełek

2014-06-01

Full Text Available The paper deals with the analysis of voltage harmonics measurements performed in the 400 kV transmission network. The voltage was measured by means of three transducers: resistive voltage divider, inductive measuring transformer and capacitive voltage measuring transformer. Instrument errors were estimated for measuring transformers with reference to the harmonic values obtained from the voltage divider.

SPICE Modeling of Body Bias Effect in 4H-SiC Integrated Circuit Resistors

Science.gov (United States)

Neudeck, Philip G.

2017-01-01

The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

Conceptual design of Dump resistor for Superconducting CS of SST-1

Science.gov (United States)

Roy, Swati; Raj, Piyush; Panchal, Arun; Pradhan, Subrata

2017-04-01

Under upgradation activities for SST-1, the existing resistive central solenoid (CS) coil will be replaced with Nb3Sn based superconducting coil. Design of Central solenoid had been completed and some of the initiative has already taken for its manufacturing. The superconducting CS will store upto 3 MJ of magnetic energy per operation cycle with operating current upto 14 kA. During quench, energy stored in the coils has to be extracted rapidly with a time constant of 1.5 s by inserting a 20 mΩ dump resistor in series with the superconducting CS which is normally shorted by circuit breakers. As a critical part of the superconducting CS quench protection system, a conceptual design of the 20 mΩ dump resistor has been proposed. The required design aspects and a dimensional layout of the dump resistor for the new superconducting CS has been presented and discussed. The basic structure of the proposed dump resistor comprises of stainless steel grids connected in series in the form of meander to minimize the stray inductance and increase the surface area for cooling. Such an array of grids connected in series and parallel will cater to the electrical as well as thermal parameters. It will be cooled by natural convection. During operation, the estimated maximum temperature of the proposed dump resistor will raise upto 600 K.

Impact of the Voltage Transients after a Fast Power Abort on the Quench Detection System in the LHC Main Dipole Chain

CERN Document Server

Ravaioli, E; Formenti, F; Montabonnet, V; Pojer, M; Schmidt, R; Siemko, A; Solfaroli Camillocci, A; Steckert, J; Thiesen, H; Verweij, A

2012-01-01

A Fast Power Abort in the LHC superconducting main dipole circuit consists in the switch-off of the power converter and the opening of the two energy-extraction switches. Each energy-extraction unit is composed of redundant electromechanical breakers, which are opened to force the current through an extraction resistor. When a switch is opened arcing occurs in the switch and a voltage of up to 1 kV builds up across the extraction resistor with a typical ramp rate of about 80 kV/s. The subsequent voltage transient propagates through the chain of 154 dipoles and superposes on the voltage waves caused by the switch-off of the power converter. The resulting effect caused intermittent triggering of the quench protection systems along with heater firings in the magnets when the transient occurred during a ramp of the current. A delay between power converter switch-off and opening of the energy-extraction switches was introduced to prevent this effect. Furthermore, the output filters of the power converters were mod...

Break-collapse method for resistor networks-renormalization group applications

International Nuclear Information System (INIS)

Tsallis, C.; Coniglio, A.; Redner, S.

1982-01-01

The break-collapse method recently introduced for the q-state Potts model is adapted for resistor networks. This method greatly simplifies the calculation of the conductance of an arbitrary two-terminal d-dimensional array of conductances, obviating the use of either Kirchhoff's laws or the star-triangle or similiar transformations. Related properties are discussed as well. An illustrative real-space renormalization-group treatment of the random resistor problem on the square lattice is presented; satisfactory results are obtained. (Author) [pt

Recursion-transform method for computing resistance of the complex resistor network with three arbitrary boundaries.

Science.gov (United States)

Tan, Zhi-Zhong

2015-05-01

We develop a general recursion-transform (R-T) method for a two-dimensional resistor network with a zero resistor boundary. As applications of the R-T method, we consider a significant example to illuminate the usefulness for calculating resistance of a rectangular m×n resistor network with a null resistor and three arbitrary boundaries, a problem never solved before, since Green's function techniques and Laplacian matrix approaches are invalid in this case. Looking for the exact calculation of the resistance of a binary resistor network is important but difficult in the case of an arbitrary boundary since the boundary is like a wall or trap which affects the behavior of finite network. In this paper we obtain several general formulas of resistance between any two nodes in a nonregular m×n resistor network in both finite and infinite cases. In particular, 12 special cases are given by reducing one of the general formulas to understand its applications and meanings, and an integral identity is found when we compare the equivalent resistance of two different structures of the same problem in a resistor network.

Laser Trimming of CuAlMo Thin-Film Resistors: Effect of Laser Processing Parameters

Science.gov (United States)

Birkett, Martin; Penlington, Roger

2012-08-01

This paper reports the effect of varying laser trimming process parameters on the electrical performance of a novel CuAlMo thin-film resistor material. The films were prepared on Al2O3 substrates by direct-current (DC) magnetron sputtering, before being laser trimmed to target resistance value. The effect of varying key laser parameters of power, Q-rate, and bite size on the resistor stability and tolerance accuracy were systematically investigated. By reducing laser power and bite size and balancing this with Q-rate setting, significant improvements in resistor stability and resistor tolerance accuracies of less than ±0.5% were achieved.

X-Ray Characterization of Resistor/Dielectric Material for Low Temperature Co-Fired Ceramic Packages

International Nuclear Information System (INIS)

DIMOS, DUANE B.; KOTULA, PAUL G.; RODRIGUEZ, MARK A.; YANG, PIN

1999-01-01

High temperature XRD has been employed to monitor the devitrification of Dupont 951 low temperature co-fired ceramic (LTCC) and Dupont E84005 resistor ink. The LTCC underwent devitrification to an anorthite phase in the range of 835-875 C with activation energy of 180 kJ/mol as calculated from kinetic data. The resistor paste underwent devitrification in the 835-875 C range forming monoclinic and hexagonal celcian phases plus a phase believed to be a zinc-silicate. RuO(sub 2) appeared to be stable within this devitrified resistor matrix. X-ray radiography of a co-fired circuit indicated good structural/chemical compatibility between the resistor and LTCC

Automated crack detection in conductive smart-concrete structures using a resistor mesh model

Science.gov (United States)

Downey, Austin; D'Alessandro, Antonella; Ubertini, Filippo; Laflamme, Simon

2018-03-01

Various nondestructive evaluation techniques are currently used to automatically detect and monitor cracks in concrete infrastructure. However, these methods often lack the scalability and cost-effectiveness over large geometries. A solution is the use of self-sensing carbon-doped cementitious materials. These self-sensing materials are capable of providing a measurable change in electrical output that can be related to their damage state. Previous work by the authors showed that a resistor mesh model could be used to track damage in structural components fabricated from electrically conductive concrete, where damage was located through the identification of high resistance value resistors in a resistor mesh model. In this work, an automated damage detection strategy that works through placing high value resistors into the previously developed resistor mesh model using a sequential Monte Carlo method is introduced. Here, high value resistors are used to mimic the internal condition of damaged cementitious specimens. The proposed automated damage detection method is experimentally validated using a 500 × 500 × 50 mm3 reinforced cement paste plate doped with multi-walled carbon nanotubes exposed to 100 identical impact tests. Results demonstrate that the proposed Monte Carlo method is capable of detecting and localizing the most prominent damage in a structure, demonstrating that automated damage detection in smart-concrete structures is a promising strategy for real-time structural health monitoring of civil infrastructure.

Advanced ceramic composite for high energy resistors. Characterization of electrical and physical properties

International Nuclear Information System (INIS)

Farrokh, Fattahi; Navid, Tagizadegan; Naser, Tabatabaei; Ahmad, Rashtehizadeh

2005-01-01

There is a need to characterize and apply advanced materials to improve the performance of components used in pulse power systems. One area of innovation is the use of bulk electrically conductive ceramics for non-inductive, high energy and high power electrical resistors. Standard Ceramics Inc. has developed a unique silicon carbide structural ceramic composite which exhibits electrical conductivity. The new conductive bulk ceramic material has a controlled microstructure, which results in improved homogeneity, making the material suitable for use as a non-inductive high energy resistor. This paper describes characterization of the material's physical and electrical properties and relates them to improvements in low-inductance, high temperature, high power density and high energy density resistors. The bulk resistor approach offers high reliability through better mechanical properties and simplicity of construction

Ruthenium oxide resistors as sensitive elements of composite bolometers

International Nuclear Information System (INIS)

Benassai, M.; Gallinaro, G.; Gatti, F.; Siri, S.; Vitale, S.

1988-01-01

Bolometers for particle detection made with Ruthenium oxide thermistors could be produced by means of a simple technique on a variety of different materials as substrata. Preliminary results on alpha particle detection with devices realized using commercial RuO 2 thick film resistor (Tfr) are considered positive for devices operating between. 3 and .1 k and determined us to pursue further the idea. Ruthenium oxide resistors on sapphire at the moment are being prepared. The behaviour of these devices st temperatures lower than .1 k has to be investigated in more detail

The resistance changes of carbon and metal oxide film resistors by irradiation of 60Co γ rays

International Nuclear Information System (INIS)

Okamoto, Shinichi; Fujino, Takahiro; Furuta, Junichiro; Yoshida, Toshio

1979-01-01

The resistance changes of glass-sealed deposited-carbon-film and carbon-coated-film resitors and metal oxide glazed resistors made in USA were studied by gamma-ray irradiation. (1) The resistances of deposited-carbon-film resistors of 50, 100 and 200 megohm did not change by irradiation of gamma rays up to 1.9 x 10 9 R. (2) The carbon-coated-film resistors of 100, 1000, 10000 and 100000 megohm had negative resistance changes by irradiation of gamma rays up to 9.9 x 10 8 R. (3) The resistances of metal oxide glazed resistors of 100, 1000 and 10000 megohm did not change by irradiation of gamma rays up to 8.8 x 10 8 R. When radiation monitoring instruments with hi-meg resistors are used in a gamma field with high intensity, the resistors must not be exposed to gamma rays with high doses, or the resistors which do not change by gamma-ray irradiation must be selected. (author)

Ceramic composite resistors of B4C modified by TIO2 and glass phase

International Nuclear Information System (INIS)

Klimiec, E.; Zaraska, W.; Stobiecki, T.

1998-01-01

Technical progress in the manufacturing technology of composite materials resulted in arising of new generation of bulk resistors, resistant to high levels of overloads and high temperature. These resistors can be applied in extremely heavy working conditions, for instance in cooperation with ignition circuits. The resistors investigated in our research were performed on the basis of ceramic composite consisted of semiconductor boron carbide B 4 C as conductive phase, aluminium oxide Al 2 O 3 and non-alkali glass as insulators and titanium dioxide TiO 2 . The technological procedure of the fabrication of resistors and the results of the tests, such as temperature dependence of the electrical resistance exploitation trials, are presented. (author)

Current and Voltage Mode Multiphase Sinusoidal Oscillators Using CBTAs

Directory of Open Access Journals (Sweden)

M. Sagbas

2013-04-01

Full Text Available Current-mode (CM and voltage-mode (VM multiphase sinusoidal oscillator (MSO structures using current backward transconductance amplifier (CBTA are proposed. The proposed oscillators can generate n current or voltage signals (n being even or odd equally spaced in phase. n+1 CBTAs, n grounded capacitors and a grounded resistor are used for nth-state oscillator. The oscillation frequency can be independently controlled through transconductance (gm of the CBTAs which are adjustable via their bias currents. The effects caused by the non-ideality of the CBTA on the oscillation frequency and condition have been analyzed. The performance of the proposed circuits is demonstrated on third-stage and fifth-stage MSOs by using PSPICE simulations based on the 0.25 µm TSMC level-7 CMOS technology parameters.

Random access memory immune to single event upset using a T-resistor

Science.gov (United States)

Ochoa, Jr., Agustin

1989-01-01

In a random access memory cell, a resistance "T" decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell.

Currents and voltages in the MFTF coils during the formation of a normal zone

International Nuclear Information System (INIS)

Owen, E.W.

1980-08-01

Expressions are obtained for the currents and voltages in a pair of inductively coupled superconducting coils under two conditions: formation of a normal zone and during a change in the level of the current in one coil. A dump resistor of low resistance and a detector bridge is connected across each coil. Calculated results are given for the MFTF coils. The circuit equations during formation of a normal zone are nonlinear and time-varying, consequently, only a series solution is possible. The conditions during a change in current are more easily found. After the transient has died away, the voltages in the coil associated with the changing source are all self-inductive, while the voltages in the other coil are all mutually inductive

Method of preparing high-temperature-stable thin-film resistors

Science.gov (United States)

Raymond, L.S.

1980-11-12

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Electrochemical Migration on Electronic Chip Resistors in Chloride Environments

DEFF Research Database (Denmark)

Minzari, Daniel; Jellesen, Morten Stendahl; Møller, Per

2009-01-01

Electrochemical migration behavior of end terminals on ceramic chip resistors (CCRs) was studied using a novel experimental setup in varying sodium chloride concentrations from 0 to 1000 ppm. The chip resistor used for the investigation was 10-kΩ CCR size 0805 with end terminals made of 97Sn3Pb...... rate of the Sn and stability of Sn ions in the solution layer play a significant role in the formation of dendrites, which is controlled by chloride concentration and potential bias. Morphology, composition, and resistance of the dendrites were dependent on chloride concentration and potential....

Method of preparing high-temperature-stable thin-film resistors

International Nuclear Information System (INIS)

Raymond, L.S.

1983-01-01

A chemical vapor deposition method is disclosed for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor

SEU simulation and testing of resistor-hardened D-latches in the SA3300 microprocessor

International Nuclear Information System (INIS)

Sexton, F.W.; Corbett, W.T.; Treece, R.K.; Hass, K.J.; Axness, C.L.; Hash, G.L.; Shaneyfelt, M.R.; Wunsch, T.F.; Hughes, K.L.

1991-01-01

In this paper the SEU tolerance of the SA3300 microprocessor with feedback resistors is presented and compared to the SA3300 without feedback resistors and to the commercial version (NS32016). Upset threshold at room temperature increased from 23 MeV-cm 2 /mg and 180 MeV-cm 2 /mg with feedback resistors of 50 kΩ and 160 kΩ, respectively. The performance goal of 10 MHz over the full temperature range of -55 degrees C to +125 degrees C is exceeded for feedback resistors of 160 kΩ and less. Error rate calculations for this design predict that the error rate is less than once every 100 years when 50 kΩ feedback resistors are used in the D-latch design. Analysis of the SEU response using a lumped-parameter circuit simulator imply a charge collection depth of 4.5 μm. This is much deeper than the authors would expect for prompt collection in the epi and funnel regions and has been explained in terms of diffusion current in the heavily doped substrate

Study and field verification of the effects of removing closing resistors from 500 kV circuit breakers

International Nuclear Information System (INIS)

Selin, D.A.; Agrawal, B.L.; Farmer, R.G.; Demcko, J.A.

1992-01-01

Closing resistors in EHV circuit breakers are frequently used to reduce switching transients on lines thus preventing flashovers during line energization. Maintenance and failures of such closing resistors can be costly and reduce transmission system reliability. For these reasons, APS conducted an investigation into the technical feasibility of operating its 500 kV without closing resistors. This paper describes study results of removing closing resistors from 500 kV breakers in a system which employs older technology silicon carbide type surge arresters. The paper also describes results of field tests of the expected flashover rates calculated in the study. These field tests involve repeatedly energizing a 258 mile 500 kV line using a breaker in which the closing resistors are disabled. Transient overvoltages captured during the tests are compared with predicted overvoltages. The study concludes that closing resistors may be removed from the subject system without unacceptable consequences

Underlying Physics of Conductive Polymer Composites and Force Sensing Resistors (FSRs). A Study on Creep Response and Dynamic Loading.

Science.gov (United States)

Paredes-Madrid, Leonel; Matute, Arnaldo; Bareño, Jorge O; Parra Vargas, Carlos A; Gutierrez Velásquez, Elkin I

2017-11-21

Force Sensing Resistors (FSRs) are manufactured by sandwiching a Conductive Polymer Composite (CPC) between metal electrodes. The piezoresistive property of FSRs has been exploited to perform stress and strain measurements, but the rheological property of polymers has undermined the repeatability of measurements causing creep in the electrical resistance of FSRs. With the aim of understanding the creep phenomenon, the drift response of thirty two specimens of FSRs was studied using a statistical approach. Similarly, a theoretical model for the creep response was developed by combining the Burger's rheological model with the equations for the quantum tunneling conduction through thin insulating films. The proposed model and the experimental observations showed that the sourcing voltage has a strong influence on the creep response; this observation-and the corresponding model-is an important contribution that has not been previously accounted. The phenomenon of sensitivity degradation was also studied. It was found that sensitivity degradation is a voltage-related phenomenon that can be avoided by choosing an appropriate sourcing voltage in the driving circuit. The models and experimental observations from this study are key aspects to enhance the repeatability of measurements and the accuracy of FSRs.

Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

Science.gov (United States)

Neudeck, Philip G.

2017-01-01

The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 degrees Celsius durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

Inclusion of Body-Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

Science.gov (United States)

Neudeck, Philip G.

2017-01-01

The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

International Nuclear Information System (INIS)

Vinayak, Seema; Vyas, H.P.; Muraleedharan, K.; Vankar, V.D.

2006-01-01

Different Ni-Cr alloys were sputter-deposited on silicon nitride-coated GaAs substrates and covered with a spin-coated polyimide layer to develop thin film metal resistors for GaAs monolithic microwave integrated circuits (MMICs). The contact to the resistors was made through vias in the polyimide layer by sputter-deposited Ti/Au interconnect metal. The variation of contact resistance, sheet resistance (R S ) and temperature coefficient of resistance (TCR) of the Ni-Cr resistors with fabrication process parameters such as polyimide curing thermal cycles and surface treatment given to the wafer prior to interconnect metal deposition has been studied. The Ni-Cr thin film resistors exhibited lower R S and higher TCR compared to the as-deposited Ni-Cr film that was not subjected to thermal cycles involved in the MMIC fabrication process. The change in resistivity and TCR values of Ni-Cr films during the MMIC fabrication process was found to be dependent on the Ni-Cr alloy composition

Development and Testing of an Ultra Low Power System-On-Chip (SOC) Platform for Marine Mammal Tags and Passive Acoustic Signal Processing

Science.gov (United States)

2014-09-30

and testing convenience. The AFE chip includes the analog front end interfaces to both the depth sensor ( piezo sensor) and the hydrophone. The...output signal in the high-gain mode is saturated even with the minimum input level of 150µV. Thus, we use a resistor voltage divider at the input to

Measurement of microchannel fluidic resistance with a standard voltage meter

International Nuclear Information System (INIS)

Godwin, Leah A.; Deal, Kennon S.; Hoepfner, Lauren D.; Jackson, Louis A.; Easley, Christopher J.

2013-01-01

Highlights: ► Standard voltage meter used to measure fluidic resistance. ► Manual measurement takes a few seconds, akin to electrical resistance measurements. ► Measurement error is reduced compared to other approaches. ► Amenable to dynamic measurement of fluidic resistance. - Abstract: A simplified method for measuring the fluidic resistance (R fluidic ) of microfluidic channels is presented, in which the electrical resistance (R elec ) of a channel filled with a conductivity standard solution can be measured and directly correlated to R fluidic using a simple equation. Although a slight correction factor could be applied in this system to improve accuracy, results showed that a standard voltage meter could be used without calibration to determine R fluidic to within 12% error. Results accurate to within 2% were obtained when a geometric correction factor was applied using these particular channels. When compared to standard flow rate measurements, such as meniscus tracking in outlet tubing, this approach provided a more straightforward alternative and resulted in lower measurement error. The method was validated using 9 different fluidic resistance values (from ∼40 to 600 kPa s mm −3 ) and over 30 separately fabricated microfluidic devices. Furthermore, since the method is analogous to resistance measurements with a voltage meter in electrical circuits, dynamic R fluidic measurements were possible in more complex microfluidic designs. Microchannel R elec was shown to dynamically mimic pressure waveforms applied to a membrane in a variable microfluidic resistor. The variable resistor was then used to dynamically control aqueous-in-oil droplet sizes and spacing, providing a unique and convenient control system for droplet-generating devices. This conductivity-based method for fluidic resistance measurement is thus a useful tool for static or real-time characterization of microfluidic systems.

Effect of diffusion on percolation threshold in thick-film resistors

International Nuclear Information System (INIS)

Abdurakhmanov, G.

2009-01-01

Resistivity ρ(C) of thick-film resistors doped by metal oxides is simulated as a function of volume content C of the ligature, firing temperature T f and firing time τ. It is proved that the doping of a glass during firing of the thick film resistor is rather uniform. It is shown also, that conductance takes place in the whole volume of the sample, but not through the sole infinite cluster only, even the content of a conductive phase is below than the theoretical percolation threshold value.

First high-voltage measurements using Ca{sup +} ions at the ALIVE experiment

Energy Technology Data Exchange (ETDEWEB)

König, K., E-mail: kkoenig@ikp.tu-darmstadt.de [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Geppert, Ch. [Universität Mainz, Institut für Kernchemie (Germany); Krämer, J.; Maaß, B. [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Otten, E. W. [Universität Mainz, Institut für Physik (Germany); Ratajczyk, T.; Nörtershäuser, W. [Technische Universität Darmstadt, Institut für Kernphysik (Germany)

2017-11-15

Many physics experiments depend on accurate high-voltage measurements to determine for example the exact retardation potential of an electron spectrometer as in the KATRIN experiment or the acceleration voltage of the ions at ISOL facilities. Until now only precision high-voltage dividers can be used to measure voltages up to 65 kV with an accuracy of 1 ppm. However, these dividers need frequent calibration and cross-checking and the direct traceability is not given. In this article we will describe the status of an experiment which aims to measure high voltages using collinear laser spectroscopy and which has the potential to provide a high-voltage standard and hence, a calibration source for precision high-voltage dividers on the 1 ppm level.

A random access memory immune to single event upset using a T-Resistor

Science.gov (United States)

Ochoa, A. Jr.

1987-10-28

In a random access memory cell, a resistance ''T'' decoupling network in each leg of the cell reduces random errors caused by the interaction of energetic ions with the semiconductor material forming the cell. The cell comprises two parallel legs each containing a series pair of complementary MOS transistors having a common gate connected to the node between the transistors of the opposite leg. The decoupling network in each leg is formed by a series pair of resistors between the transistors together with a third resistor interconnecting the junction between the pair of resistors and the gate of the transistor pair forming the opposite leg of the cell. 4 figs.

Short-circuit protection of LLC resonant converter using voltages across resonant tank elements

Directory of Open Access Journals (Sweden)

Denys Igorovych Zaikin

2015-06-01

Full Text Available This paper describes two methods for the short-circuit protection of the LLC resonant converter. One of them uses the voltage across the capacitor and the other uses the voltage across the inductor of the resonant tank. These voltages can be processed (integrated or differentiated to recover the resonant tank current. The two circuits illustrated in the described methods make it possible to develop a robust LLC converter design and to avoid using lossy current measurement elements, such as a shunt resistor or current transformer. The methods also allow measuring resonant tank current without breaking high-current paths and connecting the measuring circuit in parallel with the inductor or capacitor of the resonant tank. Practical implementations of these indirect current measurements have been experimentally tested for the short-circuit protection of the 1600 W LLC converter.

Simulations of signal amplification and oscillations using a SNS junction

International Nuclear Information System (INIS)

Luiz, A.M.; Soares, V.; Nicolsky, R.

1998-01-01

A superconducting - normal metal - superconducting junction (SNS junction) may exhibit a low voltage negative differential resistance (LVNDR) effect over part of its current voltage characteristic (CVC). As the LVNDR effect is stable against a bias voltage at this CVC range, it should be possible to combine a SNS junction with conventional electronic circuits to obtain electronic devices such as mixers, amplifiers and oscillators. Making use of this remarkable effect, we show that an amplifier may be feasible by assembling a simple voltage divider made up of a SNS junction in series with a resistor. The amplifier circuit includes an adjustable DC voltage supply (the bias voltage) and an AC signal source with a given voltage. The SNS junction is connected in series with a resistor R. Choosing values of the load resistance R approximately equal to the module of the negative differential resistance (dV/dI), at the bias voltage, we may obtain large gains in this amplifier device. In order to get an oscillator, the SNS junction should be connected to a RLC tank circuit with a bias voltage adjusted in the range of the LVNDR region of its CVC. A power output of the order of one microwatt may be easily obtained. (orig.)

Low Voltage Ride-Through Capability Solutions for Permanent Magnet Synchronous Wind Generators

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Victor F. Mendes

2016-01-01

Full Text Available Due to the increasing number of wind power plants, several countries have modified their grid codes to include specific requirements for the connection of this technology to the power system. One of the requirements is the ride-through fault capability (RTFC, i.e., the system capability to sustain operation during voltage sags. In this sense, the present paper intends to investigate the behavior of a full-converter wind generator with a permanent magnet synchronous machine during symmetrical and asymmetrical voltage sags. Two solutions to improve the low voltage ride-through capability (LVRT of this technology are analyzed: discharging resistors (brake chopper and resonant controllers (RCs. The design and limitations of these solutions and the others proposed in the literature are discussed. Experimental results in a 34 kW test bench, which represents a scaled prototype of a real 2 MW wind conversion system, are presented.

Thermometry using 1/8 W carbon resistors in a temperature region around 10 mK

International Nuclear Information System (INIS)

Kobayasi, S.; Shinohara, M.; Ono, K.

1976-01-01

The resistance-temperature characteristics of 1/8 W carbon resistors of grade ERC-18SG, manufactured by Matsushita, with the nominal values of 48, 82, 100, 220 and 330 Ω have been measured in the region 4.2 K to 25 mK and their application as thermometers in this region is confirmed. For the 82 Ω resistor, measurements were taken at temperatures below 10mK. The temperature dependence of the resistance was found to be linear on the log-log plot over a wide range below 50 mK. The sensitivity remains finite even at 6 mK, but below 10 mK rapid measurements were prevented by a considerable increase in the thermal relaxation time. Measurement of the characteristics of several 100 Ω resistors from two different sets showed that resistors from the same set separate into two groups with different characteristics. This become appreciable at temperatures below 4.2 K, so it is difficult to predict the behaviour of Matsushite resistors below 4.2 K from the characteristics at higher temperatures. (author)

Quasi-resonant converter with divided resonant capacitor on primary and secondary side

OpenAIRE

Shiroyama, Hironobu; Matsuo, Hirofumi; Ishizuka, Yoichi

2009-01-01

This paper presents a quasi-resonant converter with divided resonant capacitor on primary and secondary side of the isolation transformer. A conventional quasi-resonant converter using flyback topology can realize soft switching with simple circuit. However, relatively large surge voltage is generated in the switching device. To suppress such surge voltage, resonant capacitor is divided on primary side and secondary side in the proposed converter. In case of prototype 95W converter, the volta...

Using an expiratory resistor, arterial pulse pressure variations predict fluid responsiveness during spontaneous breathing: an experimental porcine study.

Science.gov (United States)

Dahl, Michael K; Vistisen, Simon T; Koefoed-Nielsen, Jacob; Larsson, Anders

2009-01-01

Fluid responsiveness prediction is difficult in spontaneously breathing patients. Because the swings in intrathoracic pressure are minor during spontaneous breathing, dynamic parameters like pulse pressure variation (PPV) and systolic pressure variation (SPV) are usually small. We hypothesized that during spontaneous breathing, inspiratory and/or expiratory resistors could induce high arterial pressure variations at hypovolemia and low variations at normovolemia and hypervolemia. Furthermore, we hypothesized that SPV and PPV could predict fluid responsiveness under these conditions. Eight prone, anesthetized and spontaneously breathing pigs (20 to 25 kg) were subjected to a sequence of 30% hypovolemia, normovolemia, and 20% and 40% hypervolemia. At each volemic level, the pigs breathed in a randomized order either through an inspiratory and/or an expiratory threshold resistor (7.5 cmH2O) or only through the tracheal tube without any resistor. Hemodynamic and respiratory variables were measured during the breathing modes. Fluid responsiveness was defined as a 15% increase in stroke volume (DeltaSV) following fluid loading. Stroke volume was significantly lower at hypovolemia compared with normovolemia, but no differences were found between normovolemia and 20% or 40% hypervolemia. Compared with breathing through no resistor, SPV was magnified by all resistors at hypovolemia whereas there were no changes at normovolemia and hypervolemia. PPV was magnified by the inspiratory resistor and the combined inspiratory and expiratory resistor. Regression analysis of SPV or PPV versus DeltaSV showed the highest R2 (0.83 for SPV and 0.52 for PPV) when the expiratory resistor was applied. The corresponding sensitivity and specificity for prediction of fluid responsiveness were 100% and 100%, respectively, for SPV and 100% and 81%, respectively, for PPV. Inspiratory and/or expiratory threshold resistors magnified SPV and PPV in spontaneously breathing pigs during hypovolemia

Advanced ceramic composite for high energy resistors. Characterization of electrical and physical properties

International Nuclear Information System (INIS)

Farrokh, Fattahi; Navid, Tagizadegan; Naser, Tabatabaei

2005-01-01

Full text : There is a need to characterize and apply advanced materials to improve the performance of components used in pulse power systems. One area for innovation is the use of bulk electrically conductive ceramics for non-inductive, high energy and high power electrical resistors. Standard Ceramics, Inc. has developed a unique silicon carbide structural ceramic composite which exhibits electrical conductivity. The new conductive bulk ceramic material has a controlled microstructure, which results an improved homogeneity, making the material suitable for use as a non-inductive, high energy resistor. The new material has higher density, highee peak of temperature limit and greater physical strength compared with bulk ceramics currently used for pulsed power resistors. This paper describes characterization of the material's physical and electrical properties and relates them to improvements in low-power density, as compared to existing components would be expected and derived from specific properties such as good thermal conductivity, high strength, thermal shock resistance and high temperature capability. The bulk resistor approach that weas proposed offers high reliability through better mechanical properties and simplicity of construction

Simulation and analysis of transient over voltages due to capacitor banks switching

International Nuclear Information System (INIS)

Jadid, Sh.; Yazdanpanah, D.

2002-01-01

The switching of any capacitor bank produces over voltages. Transient overvoltage will always occur in the switching device, the switching of shunt capacitor bank has become the most common source of transient voltage on power systems. Transient over voltages due to switching the capacitor bands hurt not only to the capacitor banks, but also to other equipment, such as circuit breakers and transformers. Several methods are available for reducing energising transients. These devices include pre-insertion resistors, pre-insertion inductors,synchronous closing, and MOV arresters. However, not all are practical or economical. The other important problem is existence of capacitor banks in presence of harmonics.Capacitors do not produce harmonics;however,the addition of capacitors to the electrical system will change the frequency response characteristics of the system will change the frequency response characteristics of the system, and in some cases can result in magnification of the voltage and current distortion in the system. In other word in presence of harmonic-producing loads,the capacitors used for power factor correction,may cause parallel resonance with the system inductance, so they increase the total harmonic distortion of voltage and current waveforms

Thermometric characteristics of some 1/8W carbon resistors in the millikelvin range

International Nuclear Information System (INIS)

Radebaugh, R.; Holste, J.C.; Siegwarth, J.D.

1974-01-01

Gotch and Awano (Cryogenic Engineering (Tokyo); 8:18 (1973)) have reported on the useful characteristics of 1/8W 100Ω Matsushita carbon resistors (grade ERC-18GK) as thermometers for the region 0.4K and 4.2K. Measurements on the resistance characteristics of this grade of resistors from 11mK to 1K are reported here. Nominal resistances of 56Ω, 68Ω, 82Ω, 100Ω, and 220Ω have been measured. It is found that the 56Ω, 68Ω and 82 Ω resistors make useful thermometers down to at least 11mK. A comparison of the resistance behaviour of units immersed in dilute He 3 -He 4 with those outside the liquid is also made. (author)

Measurement of microchannel fluidic resistance with a standard voltage meter.

Science.gov (United States)

Godwin, Leah A; Deal, Kennon S; Hoepfner, Lauren D; Jackson, Louis A; Easley, Christopher J

2013-01-03

A simplified method for measuring the fluidic resistance (R(fluidic)) of microfluidic channels is presented, in which the electrical resistance (R(elec)) of a channel filled with a conductivity standard solution can be measured and directly correlated to R(fluidic) using a simple equation. Although a slight correction factor could be applied in this system to improve accuracy, results showed that a standard voltage meter could be used without calibration to determine R(fluidic) to within 12% error. Results accurate to within 2% were obtained when a geometric correction factor was applied using these particular channels. When compared to standard flow rate measurements, such as meniscus tracking in outlet tubing, this approach provided a more straightforward alternative and resulted in lower measurement error. The method was validated using 9 different fluidic resistance values (from ∼40 to 600kPa smm(-3)) and over 30 separately fabricated microfluidic devices. Furthermore, since the method is analogous to resistance measurements with a voltage meter in electrical circuits, dynamic R(fluidic) measurements were possible in more complex microfluidic designs. Microchannel R(elec) was shown to dynamically mimic pressure waveforms applied to a membrane in a variable microfluidic resistor. The variable resistor was then used to dynamically control aqueous-in-oil droplet sizes and spacing, providing a unique and convenient control system for droplet-generating devices. This conductivity-based method for fluidic resistance measurement is thus a useful tool for static or real-time characterization of microfluidic systems. Copyright © 2012 Elsevier B.V. All rights reserved.

Physical Analysis of an Electric Resistor Heating

Science.gov (United States)

Perea Martins, J. E. M.

2018-01-01

This work describes a simple experiment to measure the resistor temperature as a function of the applied power and proves that it is an efficient way to introduce some important physical concepts in classroom, including the Joule's first law, hot-spot temperature, thermal resistance, thermal dissipation constant, time constant and the Newton's law…

The development of long pulse high voltage power supply for MNI-1U neutral beam injector

International Nuclear Information System (INIS)

Detai Wang

1989-01-01

A high power long pulse high voltage power supply (HVPS) for MNI- 1 U neutral beam injector (NBI) is described. This HVPS is used as a switching regulator with a duty cycle of 1/100, the specifications of circuit are as follows, output pulse voltage 50kv, pulse current 30A, pulse width 50ms, rise-time and fall-time of the voltage are less than 25 μs, stability of the pulse flat is better than 0.5%, regulation response time of the pulse voltage less than 30 μs can be attained. It is also used as a stable DC HVPS, output voltage is 1 to 100kv, current is 1 to 5A. If regulation tube is shunted with high power resistor in parallel, the current can be extended to 10 A, stability of the output voltage or current is better than 0.1%. Now, the HVPS has been put into operation for MNI- 1 U NBI and PIG ion source made in French. 3 refs., 5 figs

The Effect of Current-Limiting Reactors on the Tripping of Short Circuits in High-Voltage Electrical Equipment

International Nuclear Information System (INIS)

Volkov, M. S.; Gusev, Yu. P.; Monakov, Yu. V.; Cho, Gvan Chun

2016-01-01

The insertion of current-limiting reactors into electrical equipment operating at a voltage of 110 and 220 kV produces a change in the parameters of the transient recovery voltages at the contacts of the circuit breakers for disconnecting short circuits, which could be the reason for the increase in the duration of the short circuit, damage to the electrical equipment and losses in the power system. The results of mathematical modeling of the transients, caused by tripping of the short circuit in a reactive electric power transmission line are presented, and data are given on the negative effect of a current-limiting resistor on the rate of increase and peak value of the transient recovery voltages. Methods of ensuring the standard requirements imposed on the parameters of the transient recovery voltages when using current-limiting reactors in the high-voltage electrical equipment of power plants and substations are proposed and analyzed

Novel charge sensitive preamplifier without high-value feedback resistor

International Nuclear Information System (INIS)

Xi Deming

1992-01-01

A novel charge sensitive preamplifier is introduced. The method of removing the high value feedback resistor, the circuit design and analysis are described. A practical circuit and its measured performances are provided

Electrical Switching of Perovskite Thin-Film Resistors

Science.gov (United States)

Liu, Shangqing; Wu, Juan; Ignatiev, Alex

2010-01-01

Electronic devices that exploit electrical switching of physical properties of thin films of perovskite materials (especially colossal magnetoresistive materials) have been invented. Unlike some related prior devices, these devices function at room temperature and do not depend on externally applied magnetic fields. Devices of this type can be designed to function as sensors (exhibiting varying electrical resistance in response to varying temperature, magnetic field, electric field, and/or mechanical pressure) and as elements of electronic memories. The underlying principle is that the application of one or more short electrical pulse(s) can induce a reversible, irreversible, or partly reversible change in the electrical, thermal, mechanical, and magnetic properties of a thin perovskite film. The energy in the pulse must be large enough to induce the desired change but not so large as to destroy the film. Depending on the requirements of a specific application, the pulse(s) can have any of a large variety of waveforms (e.g., square, triangular, or sine) and be of positive, negative, or alternating polarity. In some applications, it could be necessary to use multiple pulses to induce successive incremental physical changes. In one class of applications, electrical pulses of suitable shapes, sizes, and polarities are applied to vary the detection sensitivities of sensors. Another class of applications arises in electronic circuits in which certain resistance values are required to be variable: Incorporating the affected resistors into devices of the present type makes it possible to control their resistances electrically over wide ranges, and the lifetimes of electrically variable resistors exceed those of conventional mechanically variable resistors. Another and potentially the most important class of applications is that of resistance-based nonvolatile-memory devices, such as a resistance random access memory (RRAM) described in the immediately following article

Resistor trimming geometry; past, present and future

International Nuclear Information System (INIS)

Alafogianni, M; Penlington, R; Birkett, M

2016-01-01

This paper explores the key developments in thin film resistive trimming geometry for use in the fabrication of discrete precision resistors. Firstly an introduction to the laser trimming process is given with respect to well established trim geometries such as the plunge, 'L' and serpentine cuts. The effect of these trim patterns on key electrical properties of resistance tolerance and temperature co-efficient of resistance (TCR) of the thin films is then discussed before the performance of more recent geometries such as the three-contact and random trim approaches are reviewed. In addition to the properties of the standard trim patterns, the concept of the heat affected zone (HAZ) and ablation energy and the effect of introducing a 'fine' trim in areas of low current density to improve device performance are also studied. It is shown how trimming geometry and laser parameters can be systematically controlled to produce thin film resistors of the required properties for varying applications such as high precision, long term stability and high power pulse performance

Spatio-temporal characteristics of self-pulse in hollow cathode discharge

International Nuclear Information System (INIS)

Jing, Ha; He, Shoujie

2015-01-01

The characteristics of self-pulse in hollow cathode discharge at low pressure have been investigated. The voltage-current (V-I) curves, the influence of ballast resistor on the self-pulses, and the evolution of current and voltage are measured. Both the axial and radial spatio-temporal discharge images of self-pulse are recorded. The results show that there exists the hysteresis effect in the present hollow cathode discharge. The high value of ballast resistors is favourable for the observation of self-pulses. The process of the self-pulse can be divided into three stages from the temporal discharge images, i.e., the pre-discharge, the transition from mainly axial electric field to mainly radial electric field, and the decaying process. The self-pulse is suggested to originate from the mode transition of the discharge in essence

Thermocapillary actuation by optimized resistor pattern: bubbles and droplets displacing, switching and trapping.

Science.gov (United States)

Selva, Bertrand; Miralles, Vincent; Cantat, Isabelle; Jullien, Marie-Caroline

2010-07-21

We report a novel method for bubble or droplet displacement, capture and switching within a bifurcation channel for applications in digital microfluidics based on the Marangoni effect, i.e. the appearance of thermocapillary tangential interface stresses stemming from local surface tension variations. The specificity of the reported actuation is that heating is provided by an optimized resistor pattern (B. Selva, J. Marchalot and M.-C. Jullien, An optimized resistor pattern for temperature gradient control in microfluidics, J. Micromech. Microeng., 2009, 19, 065002) leading to a constant temperature gradient along a microfluidic cavity. In this context, bubbles or droplets to be actuated entail a surface force originating from the thermal Marangoni effect. This actuator has been characterized (B. Selva, I. Cantat, and M.-C. Jullien, Migration of a bubble towards a higher surface tension under the effect of thermocapillary stress, preprint, 2009) and it was found that the bubble/droplet (called further element) is driven toward a high surface tension region, i.e. toward cold region, and the element velocity increases while decreasing the cavity thickness. Taking advantage of these properties three applications are presented: (1) element displacement, (2) element switching, detailed in a given range of working, in which elements are redirected towards a specific evacuation, (3) a system able to trap, and consequently stop on demand, the elements on an alveolus structure while the continuous phase is still flowing. The strength of this method lies in its simplicity: single layer system, in situ heating leading to a high level of integration, low power consumption (P < 0.4 W), low applied voltage (about 10 V), and finally this system is able to manipulate elements within a flow velocity up to 1 cm s(-1).

History of resistor array infrared projectors: hindsight is always 100% operability

Science.gov (United States)

Williams, Owen M.; Goldsmith, George C., II; Stockbridge, Robert G.

2005-05-01

Numerous infrared scene projection technologies have been investigated since the 1970s. Notably, from the late 1980s the development of the first resistor array infrared projectors gained leverage from the strong concurrent developments within focal plane array imaging technology, linked by the common need for large integrated circuits comprising a 2-dimensional array of interconnected unit cells. In the resistor array case, it is the unit cell comprising the resistively heated emitter and its dedicated drive circuit that determines the projector response to its associated scene generator commands. In this paper we review the development of resistor array technology from a historical perspective, concentrating on the unit cell developments. We commence by describing the technological innovations that forged the way, sharing along the way stories of the successes and failures, all of which contributed to the steady if somewhat eventful growth of the critical knowledge base that underpins the strength of today's array technology. We conclude with comments on the characteristics and limitations of the technology and on the prospects for future array development.

Measurement of small ion beams by thermal ionisation mass spectrometry using new 1013 Ohm resistors

International Nuclear Information System (INIS)

Koornneef, J.M.; Bouman, C.; Schwieters, J.B.; Davies, G.R.

2014-01-01

Highlights: • First data are presented using 10 13 Ohm resistors connected to Faraday collectors. • 5 prototype 10 13 Ohm resistors were installed in a TRITON-Plus TIMS. • Performance was tested by measuring Sr and Nd isotope ratios on  13 Ohm resistors perform better than ion counting and 10 11 Ohm resistors. • Fourth decimal variability can be resolved for Nd isotope ratios on 10 pg samples. - Abstract: We tested 5 newly manufactured – prototype – 10 13 Ohm resistors in the feedback loop of Faraday cup amplifiers to measure small ion beams by Thermal Ionisation Mass Spectrometry (TIMS). The high Ohmic resistors installed in the TRITON Plus at the VU University Amsterdam theoretically have 10 times lower noise levels relative to the default 10 11 Ohm resistors. To investigate the precision and accuracy of analyses using these new amplifiers we measured Sr and Nd isotopes of reference standards at a range of ion currents (3.2 × 10 −16 to 1 × 10 −12 A, corresponding to intensities of 32 μV to 100 mV on a default 10 11 Ohm amplifier) and on small amounts of material (100 and 10 pg). Internal precision and external reproducibility for Sr and Nd isotope ratios are both better when collected on 10 13 compared 10 12 Ohm resistors and to the default 10 11 Ohm resistors. At an 87 Sr ion current of 3 × 10 −14 A (3 mV on a 10 11 Ohm amplifier) the internal precision (2 SE) of 87 Sr/ 86 Sr is 5 times better for 10 13 Ohm resistors compared to 10 11 Ohm resistors. The external reproducibility (2 SD) at this beam intensity is 9 times better. Multiple 100 and 10 pg Sr standards, ran to exhaustion, yielded low 87 Sr/ 86 Sr compared to the long term average (e.g. 10 pg average = 0.710083 ± 164 (n = 11) instead of 0.710244 ± 12, n = 73). The average off-set for 10 pg standards can be explained by a loading blank contribution of 1.3 pg. In contrast, Nd data on 100 pg and 10 pg samples are accurate suggesting that Nd loading blanks do not compromise the

Doped nanocrystalline ZnO powders for non-linear resistor applications by spray pyrolysis method.

Science.gov (United States)

Hembram, Kaliyan; Vijay, R; Rao, Y S; Rao, T N

2009-07-01

Homogeneous and doped nanocrystalline ZnO powders (30-200 nm) were synthesized by spray pyrolysis technique. The spray pyrolysed powders were calcined in the temperature range of 500-750 degrees C. Formation of insulating pyrochlore phase started from 700 degrees C during the calcination itself. The calcined powders were compacted and sintered at different temperatures ranging from 900-1200 degrees C for 0.5-4 h. The densification behavior was found to be dependent on calcination temperature of the nanopowder. The resulting discs were found to have density (5.34-5.62 g/cc) in the range of 96-99% of theoretical density. The breakdown voltage value obtained for the nanopowder based non-linear resistor is 10.3 kV/cm with low leakage current density of 0.7 microA/cm2 and coefficient of nonlinearity as high as 193. The activation energy for grain growth of the doped ZnO nanopowder powders is 449.4 +/- 15 kJ/mol.

Physical analysis of an electric resistor heating

Science.gov (United States)

Perea Martins, J. E. M.

2018-05-01

This work describes a simple experiment to measure the resistor temperature as a function of the applied power and proves that it is an efficient way to introduce some important physical concepts in classroom, including the Joule’s first law, hot-spot temperature, thermal resistance, thermal dissipation constant, time constant and the Newton’s law of cooling.

Conductivity of a square-lattice bond-mixed resistor network

International Nuclear Information System (INIS)

Costa, U.M.S.; Tsallis, C.; Schwaccheim, G.

1985-01-01

Within a real-space renormalization-group framework based on self-dual clusters, the conductivity of a square-lattice quenched bond-random resistor network is calculated, the conductance on each bond being g 1 or g 2 with probabilities (1-p) and p respectively. The group recovers several already known exact results (including slopes), and is consequently believed to be numerically quite reliable for almost all values of p, and all ratios g 1 /g 2 (in particular, g 1 =0 and g 1 =infinite with finite g 2 respectively correspond to the insulator-resitor and superconductor-resistor mixtures). In addition to that, an heuristic analytic expression is proposed for the conductivity which is believed to be a quite satisfactory approximation everywhere not too close to the percolation point. (Author) [pt

Ultra-high-ohmic microstripline resistors for Coulomb blockade devices

International Nuclear Information System (INIS)

Lotkhov, Sergey V

2013-01-01

In this paper, we report on the fabrication and low-temperature characterization of ultra-high-ohmic microstripline resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage–current characteristics were measured at temperatures down to T ∼ 20 mK for films with sheet resistivities as high as ∼7 kΩ, i.e. about an order of magnitude higher than our previous findings for weakly oxidized Cr. Our analysis indicates that such an improvement can help to create an advantageous high-impedance environment for different Coulomb blockade devices. Further properties of the Ti film addressed in this work show the promise of low-noise behavior of the resistors when applied in different realizations of the quantum standard of current. (paper)

A voltage biased superconducting quantum interference device bootstrap circuit

International Nuclear Information System (INIS)

Xie Xiaoming; Wang Huiwu; Wang Yongliang; Dong Hui; Jiang Mianheng; Zhang Yi; Krause, Hans-Joachim; Braginski, Alex I; Offenhaeusser, Andreas; Mueck, Michael

2010-01-01

We present a dc superconducting quantum interference device (SQUID) readout circuit operating in the voltage bias mode and called a SQUID bootstrap circuit (SBC). The SBC is an alternative implementation of two existing methods for suppression of room-temperature amplifier noise: additional voltage feedback and current feedback. Two circuit branches are connected in parallel. In the dc SQUID branch, an inductively coupled coil connected in series provides the bias current feedback for enhancing the flux-to-current coefficient. The circuit branch parallel to the dc SQUID branch contains an inductively coupled voltage feedback coil with a shunt resistor in series for suppressing the preamplifier noise current by increasing the dynamic resistance. We show that the SBC effectively reduces the preamplifier noise to below the SQUID intrinsic noise. For a helium-cooled planar SQUID magnetometer with a SQUID inductance of 350 pH, a flux noise of about 3 μΦ 0 Hz -1/2 and a magnetic field resolution of less than 3 fT Hz -1/2 were obtained. The SBC leads to a convenient direct readout electronics for a dc SQUID with a wider adjustment tolerance than other feedback schemes.

Resistor Networks based on Symmetrical Polytopes

Directory of Open Access Journals (Sweden)

Jeremy Moody

2015-03-01

Full Text Available This paper shows how a method developed by Van Steenwijk can be generalized to calculate the resistance between any two vertices of a symmetrical polytope all of whose edges are identical resistors. The method is applied to a number of cases that have not been studied earlier such as the Archimedean polyhedra and their duals in three dimensions, the regular polytopes in four dimensions and the hypercube in any number of dimensions.

Three-Input Single-Output Voltage-Mode Multifunction Filter with Electronic Controllability Based on Single Commercially Available IC

Directory of Open Access Journals (Sweden)

Supachai Klungtong

2017-01-01

Full Text Available This paper presents a second-order voltage-mode filter with three inputs and single-output voltage using single commercially available IC, one resistor, and two capacitors. The used commercially available IC, called LT1228, is manufactured by Linear Technology Corporation. The proposed filter is based on parallel RLC circuit. The filter provides five output filter responses, namely, band-pass (BP, band-reject (BR, low-pass (LP, high-pass (HP, and all-pass (AP functions. The selection of each filter response can be done without the requirement of active and passive component matching condition. Furthermore, the natural frequency and quality factor are electronically controlled. Besides, the nonideal case is also investigated. The output voltage node exhibits low impedance. The experimental results can validate the theoretical analyses.

Test of the Starling resistor model in the human upper airway during sleep.

Science.gov (United States)

Wellman, Andrew; Genta, Pedro R; Owens, Robert L; Edwards, Bradley A; Sands, Scott A; Loring, Stephen H; White, David P; Jackson, Andrew C; Pedersen, Ole F; Butler, James P

2014-12-15

The human pharyngeal airway during sleep is conventionally modeled as a Starling resistor. However, inspiratory flow often decreases with increasing effort (negative effort dependence, NED) rather than remaining fixed as predicted by the Starling resistor model. In this study, we tested a major prediction of the Starling resistor model--that the resistance of the airway upstream from the site of collapse remains fixed during flow limitation. During flow limitation in 24 patients with sleep apnea, resistance at several points along the pharyngeal airway was measured using a pressure catheter with multiple sensors. Resistance between the nose and the site of collapse (the upstream segment) was measured before and after the onset of flow limitation to determine whether the upstream dimensions remained fixed (as predicted by the Starling resistor model) or narrowed (a violation of the Starling resistor model). The upstream resistance from early to mid inspiration increased considerably during flow limitation (by 35 ± 41 cmH2O · liter(-1) · s(-1), P < 0.001). However, there was a wide range of variability between patients, and the increase in upstream resistance was strongly correlated with the amount of NED (r = 0.75, P < 0.001). Therefore, patients with little NED exhibited little upstream narrowing (consistent with the Starling model), and patients with large NED exhibited large upstream narrowing (inconsistent with the Starling model). These findings support the idea that there is not a single model of pharyngeal collapse, but rather that different mechanisms may dominate in different patients. These differences could potentially be exploited for treatment selection. Copyright © 2014 the American Physiological Society.

Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

International Nuclear Information System (INIS)

Norwood, D.P.

1989-01-01

A standard thin film circuit containing Ta/sub 2/N (100 ohms/square) resistors is fabricated by depositing on a dielectric substrate successive layers of Ta/sub 2/N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standard TFN manufacturing process enables the formation of Ta/sub 2/N + Ti (10 ohms/square) and Ta/sub 2/N + Ti + Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure

A Voltage Gain-Controlled Modified CFOA And Its Application in Electronically Tunable Four-Mode All-Pass Filter Design

OpenAIRE

Norbert Herencsar; Jaroslav Koton; Abhirup Lahiri; Bilgin Metin; Kamil Vrba

2012-01-01

This paper presents a new active building block (ABB) called voltage gain-controlled modified current feedback amplifier (VGC-MCFOA) based on bipolar junction transistor technology. The versatility of the new ABB is demonstrated in new first-order all-pass filter structure design employing single VGC-MCFOA, single grounded capacitor, and three resistors. Introduced circuit provides all four possible transfer functions at the same configuration, namely current-mode, transimpedance-mode, transa...

Control model design to limit DC-link voltage during grid fault in a dfig variable speed wind turbine

Science.gov (United States)

Nwosu, Cajethan M.; Ogbuka, Cosmas U.; Oti, Stephen E.

2017-08-01

This paper presents a control model design capable of inhibiting the phenomenal rise in the DC-link voltage during grid- fault condition in a variable speed wind turbine. Against the use of power circuit protection strategies with inherent limitations in fault ride-through capability, a control circuit algorithm capable of limiting the DC-link voltage rise which in turn bears dynamics that has direct influence on the characteristics of the rotor voltage especially during grid faults is here proposed. The model results so obtained compare favorably with the simulation results as obtained in a MATLAB/SIMULINK environment. The generated model may therefore be used to predict near accurately the nature of DC-link voltage variations during fault given some factors which include speed and speed mode of operation, the value of damping resistor relative to half the product of inner loop current control bandwidth and the filter inductance.

Optically triggered high voltage switch network and method for switching a high voltage

Science.gov (United States)

El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

1993-01-19

An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

Optically triggered high voltage switch network and method for switching a high voltage

Energy Technology Data Exchange (ETDEWEB)

El-Sharkawi, Mohamed A. (Renton, WA); Andexler, George (Everett, WA); Silberkleit, Lee I. (Mountlake Terrace, WA)

1993-01-19

An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

Transport behaviour of commercially available 100-Omega standard resistors

CSIR Research Space (South Africa)

Schumacher, B

2001-04-01

Full Text Available Several types of commercial 100-Omega resistors can be used with the cryogenic current comparator to maintain the resistance unit, derived from the Quantized Hall Effect (QHE), and to disseminate this unit to laboratory resistance standards. Up...

Au/Ti resistors used for Nb/Pb-alloy Josephson junctions. I. Electrical stability

International Nuclear Information System (INIS)

Murakami, M.; Alessandrini, E.I.; Kim, K.K.

1984-01-01

Bilayered Au/Ti films are very attractive for use as resistor materials of experimental Nb/Pb-alloy Josephson junction devices. In order to predict the electrical stability of the Au/Ti resistors during storage at room temperature, changes in microstructure and electrical resistivity of Ti and Au/Ti films during isothermal annealing at temperatures ranging from 298--473 K were studied using transmission electron microscopy, x-ray diffraction, and electrical measurements. Growth of Ti grains during annealing was observed in these films. The activation energy for the grain growth was determined to be 1.51 eV. Decreases in the sheet resistance measured at 4.2 K were observed at the early stages of isothermal annealing. By analyzing the annealing temperature dependence of rates of resistance changes, the activation energy of 1.49 eV was obtained. This energy value is very close to that obtained for the grain growth and, therefore, one of the main causes in the resistance decrease is believed to be due to the growth of Ti grains. Based on the present results, a model to predict the electrical resistance change for the Au/Ti films during storage at room temperature was established. The model predicted that change in the resistance can be significantly reduced by preannealing the resistors at an elevated temperature. The prediction was supported by the experiment and an excellent quantitative agreement between measured resistance values and those predicted by the model was obtained. Based on this model, the change was predicted to be -1.5% after about 3 years at room temperature, if the resistors were preannealed at 353 K for 10 h. This resistor stability is satisfactory for designing logic and memory circuits of Josephson devices, and it can be increased simply by preannealing for longer times at 353 K

An SEU tolerant memory cell derived from fundamental studies of SEU mechanisms in SRAM

International Nuclear Information System (INIS)

Weaver, H.T.; Axness, C.L.; McBrayer, J.D.; Browning, J.S.; Fu, J.S.; Ochoa, A. Jr.; Koga, R.

1987-01-01

A new single event upset (SEU) hardening concept, an LRAM cell, is demonstrated theoretically and experimentally. Decoupling resistors in the LRAM are used only to protect against the short n-channel transient; longer persisting pulses are reduced in magnitude by a voltage divider, a basically new concept for SEU protection. In such a design, smaller resistors provide SEU tolerance, allowing higher performance, hardened memories. As basis for the LRAM idea, techniques were developed to measure time constants for ion induced voltage transients in conventional static random access memories, SRAM. Time constants of 0.8 and 6.3 nsec were measured for transients following strikes at the n- and p-channel drains, respectively - primary areas of SEU sensitivity. These data are the first transient time measurements on full memory chips and the large difference is fundamental to the LRAM concept. Test structures of the new design exhibit equivalent SEU tolerance with resistors 5-to-10 times smaller than currently used in SRAM. Our advanced transport-plus-circuit numerical simulations of the SEU process predicted this result and account for the LRAM experiments, as well as a variety of experiments on conventional SRAM

High-Voltage, Low-Power BNC Feedthrough Terminator

Science.gov (United States)

Bearden, Douglas

2012-01-01

This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.

Science.gov (United States)

Ji, Yongsung; Zeigler, David F; Lee, Dong Su; Choi, Hyejung; Jen, Alex K-Y; Ko, Heung Cho; Kim, Tae-Wook

2013-01-01

Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our all-organic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

Novel method for fabrication of integrated resistors on bilayer Ag/YBa2Cu3O7 films using Ni implantation

International Nuclear Information System (INIS)

LaGraff, J.R.; Chan, H.; Murduck, J.M.; Hong, S.H.; Ma, Q.Y.

1997-01-01

A novel ion implantation method is described for fabricating low inductance integrated resistors on Ag/YBa 2 Cu 3 O 7 (YBCO) bilayer thin films. Parallel high and low value resistors were simultaneously formed by patterning bilayer films into 10-μm-wide lines, then masking and implanting with Ni to selectively inhibit superconductivity in YBCO. Low value resistors (<1Ω/sq) were formed at 77 K as the supercurrent bypassed the Ni-doped nonsuperconducting YBCO and was shunted through the overlying low resistivity Ag metal. High value resistors (20 - 140 Ω/sq) were formed by removing Ag from above the implanted YBCO forcing the current through the implanted YBCO region. The sheet resistance of both types of resistors was found to increase systematically with increasing Ni implant energy. copyright 1997 American Institute of Physics

Electrochemical, morphological and microstructural characterization of carbon film resistor electrodes for application in electrochemical sensors

International Nuclear Information System (INIS)

Gouveia-Caridade, Carla; Soares, David M.; Liess, Hans-Dieter; Brett, Christopher M.A.

2008-01-01

The electrochemical and microstructural properties of carbon film electrodes made from carbon film electrical resistors of 1.5, 15, 140 Ω and 2.0 kΩ nominal resistance have been investigated before and after electrochemical pre-treatment at +0.9 V vs SCE, in order to assess the potential use of these carbon film electrodes as electrochemical sensors and as substrates for sensors and biosensors. The results obtained are compared with those at electrodes made from previously investigated 2 Ω carbon film resistors. Cyclic voltammetry was performed in acetate buffer and phosphate buffer saline electrolytes and the kinetic parameters of the model redox system Fe(CN) 6 3-/4- obtained. The 1.5 Ω resistor electrodes show the best properties for sensor development with wide potential windows, similar electrochemical behaviour to those of 2 Ω and close-to-reversible kinetic parameters after electrochemical pre-treatment. The 15 and 140 Ω resistor electrodes show wide potential windows although with slower kinetics, whereas the 2.0 kΩ resistor electrodes show poor cyclic voltammetric profiles even after pre-treatment. Electrochemical impedance spectroscopy related these findings to the interfacial properties of the electrodes. Microstructural and morphological studies were carried out using contact mode Atomic Force Microscopy (AFM), Confocal Raman spectroscopy and X-ray diffraction. AFM showed more homogeneity of the films with lower nominal resistances, related to better electrochemical characteristics. X-ray diffraction and Confocal Raman spectroscopy indicate the existence of a graphitic structure in the carbon films

Current-Voltage Characteristics of DC Discharge in Micro Gas Jet Injected into Vacuum Environment

International Nuclear Information System (INIS)

Matra, K; Furuta, H; Hatta, A

2013-01-01

A current-voltage characteristic of direct current (DC) gas discharge operated in a micro gas jet injected into a secondary electron microscope (SEM) chamber is presented. Ar gas was injected through a 30 μm orifice gas nozzle (OGN) and was evacuated by an additional pump to keep the high vacuum environment. Gas discharges were ignited between the OGN as anode and a counter electrode of Si wafer. The discharge was self-pulsating in most of the cases while it was stable at lower pressure, larger gap length, and larger time averaged current. The self-pulsating discharge was oscillated by the RC circuit consisting of a stray capacitor and a large ballast resistor. The real time plots of voltage and current during the pulsating was investigated using a discharge model.

Multifractal properties of resistor diode percolation.

Science.gov (United States)

Stenull, Olaf; Janssen, Hans-Karl

2002-03-01

Focusing on multifractal properties we investigate electric transport on random resistor diode networks at the phase transition between the nonpercolating and the directed percolating phase. Building on first principles such as symmetries and relevance we derive a field theoretic Hamiltonian. Based on this Hamiltonian we determine the multifractal moments of the current distribution that are governed by a family of critical exponents [psi(l)]. We calculate the family [psi(l)] to two-loop order in a diagrammatic perturbation calculation augmented by renormalization group methods.

A new computer-aided simulation model for polycrystalline silicon film resistors

Science.gov (United States)

Ching-Yuan Wu; Weng-Dah Ken

1983-07-01

A general transport theory for the I-V characteristics of a polycrystalline film resistor has been derived by including the effects of carrier degeneracy, majority-carrier thermionic-diffusion across the space charge regions produced by carrier trapping in the grain boundaries, and quantum mechanical tunneling through the grain boundaries. Based on the derived transport theory, a new conduction model for the electrical resistivity of polycrystalline film resitors has been developed by incorporating the effects of carrier trapping and dopant segregation in the grain boundaries. Moreover, an empirical formula for the coefficient of the dopant-segregation effects has been proposed, which enables us to predict the dependence of the electrical resistivity of phosphorus-and arsenic-doped polycrystalline silicon films on thermal annealing temperature. Phosphorus-doped polycrystalline silicon resistors have been fabricated by using ion-implantation with doses ranged from 1.6 × 10 11 to 5 × 10 15/cm 2. The dependence of the electrical resistivity on doping concentration and temperature have been measured and shown to be in good agreement with the results of computer simulations. In addition, computer simulations for boron-and arsenic-doped polycrystalline silicon resistors have also been performed and shown to be consistent with the experimental results published by previous authors.

Continuously forced ballast resistor model for superconducting hot spots

International Nuclear Information System (INIS)

Ausloos, M.

1981-01-01

To neglect the Thomson effect in the ballast resistor theory is an incorrect assumption since it measures the velocity of the thermal grain boundaries. Due to the constant rate of heating or cooling, large oscillations are predicted in dR/dT near Tsub(c). (orig.)

Optimal planning of series resistor to control time constant of test circuit for high-voltage AC circuit-breakers

OpenAIRE

Yoon-Ho Kim; Jung-Hyeon Ryu; Jin-Hwan Kim; Kern-Joong Kim

2016-01-01

The equivalent test circuit that can deliver both short-circuit current and recovery voltage is used to verify the performance of high-voltage circuit breakers. Most of the parameters in this circuit can be obtained by using a simple calculation or a simulation program. The ratings of the circuit breaker include rated short-circuit breaking current, rated short-circuit making current, rated operating sequence of the circuit breaker and rated short-time current. Among these ratings, the short-...

Realisations of single-resistance-controlled quadrature oscillators using a generalised current follower transconductance amplifier and a unity-gain voltage-follower

OpenAIRE

Herencsár, Norbert; Vrba, Kamil; Koton, Jaroslav; Lahiri, Abhirup

2010-01-01

This article presents realisations of single-resistance-controlled-oscillators (SRCOs) using the recently proposed modern active building block (ABB), namely the generalised current follower transconductance amplifier (GCFTA) and unity-gain voltage-follower (UGVF). The SRCO is made using reduced number of components: one GCFTA and one UGVF as the ABBs, two resistors and two grounded capacitors. The circuit offers the advantage of non-interactive control of condition of oscillation and frequen...

A Voltage Gain-Controlled Modified CFOA And Its Application in Electronically Tunable Four-Mode All-Pass Filter Design

Directory of Open Access Journals (Sweden)

Norbert Herencsar

2012-07-01

Full Text Available This paper presents a new active building block (ABB called voltage gain-controlled modified current feedback amplifier (VGC-MCFOA based on bipolar junction transistor technology. The versatility of the new ABB is demonstrated in new first-order all-pass filter structure design employing single VGC-MCFOA, single grounded capacitor, and three resistors. Introduced circuit provides all four possible transfer functions at the same configuration, namely current-mode, transimpedance-mode, transadmittance-mode, and voltage-mode. The pole frequency of the circuit can be easily tuned by means of DC bias currents. The theoretical results are verified by SPICE simulations based on bipolar transistor arrays AT&T ALA400-CBIC-R process parameters.

1.3 MV voltage pulse shaping for 13 Ohm load by means of the VMG-160 magnetocumulative generator

International Nuclear Information System (INIS)

Kravchenko, A.S.; Boriskin, A.S.; Vilkov, Yu.V.; Selemir, V.D.; Dimant, E.M.; Yuryzhev, A.S.; Zenkov, D.I.; Tkachuk, A.A.; Kirshanova, E.N.; Kozlov, M.B.

2000-01-01

The device on the basis of a magnetocumulative generator with a transformer output making it possible to form powerful (≥ 100 GW) pulses with current rise time of approximately 1 μs on the load of about 10 Ohm is described. The results of testing the generator on the load in form of a liquid resistor are presented. The voltage pulse of 13 MV is obtained on the resistive load of 13 Ohm as a result of the superconductors electrical explosion. The results of the numerical modeling indicated the possibility of forming the voltage pulses ≥ 1MV with the current rise time of approximately 100 ns on the resistance of 13 Ohm [ru

Proton conducting sodium alginate electrolyte laterally coupled low-voltage oxide-based transistors

Energy Technology Data Exchange (ETDEWEB)

Liu, Yang Hui; Wan, Qing, E-mail: wanqing@nju.edu.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China); Qiang Zhu, Li, E-mail: lqzhu@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Shi, Yi [School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 (China)

2014-03-31

Solution-processed sodium alginate electrolyte film shows a high proton conductivity of ∼5.5 × 10{sup −3} S/cm and a high lateral electric-double-layer (EDL) capacitance of ∼2.0 μF/cm{sup 2} at room temperature with a relative humidity of 57%. Low-voltage in-plane-gate indium-zinc-oxide-based EDL transistors laterally gated by sodium alginate electrolytes are fabricated on glass substrates. The field-effect mobility, current ON/OFF ratio, and subthreshold swing of such EDL transistors are estimated to be 4.2 cm{sup 2} V{sup −1} s{sup −1}, 2.8 × 10{sup 6}, and 130 mV/decade, respectively. At last, a low-voltage driven resistor-load inverter is also demonstrated. Such in-plane-gate EDL transistors have potential applications in portable electronics and low-cost biosensors.

Fault Ride-through Capability Enhancement of Voltage Source Converter-High Voltage Direct Current Systems with Bridge Type Fault Current Limiters

Directory of Open Access Journals (Sweden)

Md Shafiul Alam

2017-11-01

Full Text Available This paper proposes the use of bridge type fault current limiters (BFCLs as a potential solution to reduce the impact of fault disturbance on voltage source converter-based high voltage DC (VSC-HVDC systems. Since VSC-HVDC systems are vulnerable to faults, it is essential to enhance the fault ride-through (FRT capability with auxiliary control devices like BFCLs. BFCL controllers have been developed to limit the fault current during the inception of system disturbances. Real and reactive power controllers for the VSC-HVDC have been developed based on current control mode. DC link voltage control has been achieved by a feedback mechanism such that net power exchange with DC link capacitor is zero. A grid-connected VSC-HVDC system and a wind farm integrated VSC-HVDC system along with the proposed BFCL and associated controllers have been implemented in a real time digital simulator (RTDS. Symmetrical three phase as well as different types of unsymmetrical faults have been applied in the systems in order to show the effectiveness of the proposed BFCL solution. DC link voltage fluctuation, machine speed and active power oscillation have been greatly suppressed with the proposed BFCL. Another significant feature of this work is that the performance of the proposed BFCL in VSC-HVDC systems is compared to that of series dynamic braking resistor (SDBR. Comparative results show that the proposed BFCL is superior over SDBR in limiting fault current as well as improving system fault ride through (FRT capability.

Advanced ceramic composite for high energy resistors : Characterization of electrical and physical properties

International Nuclear Information System (INIS)

Farrokh, Fattahi; Navid, Tagizadegan; Naser, Tabatabaei; Ahmad, Rashtehizadeh

2005-01-01

There is a need to characterize and apply advanced materials to improve the performance of components used in pulse power systems. One area for innovation is the use of bulk electrically conductive ceramics for non-inductive, high energy and high power electrical resistors. Standard Ceramics Inc. has developed a unique silicon carbide structural ceramic composite which exhibits electrical conductivity. The new, new, conductive, bulk ceramic material has a controlled microstructure, which results in improved homogeneity, making the material suitable for use as a non-inductive, high energy resistor

Biphase sinusoidal oscillator based on negative resistor.

Science.gov (United States)

Bayard, Jean

2010-06-01

This paper describes a biphase sinusoidal generator which provides two signals: v(ref)=V(M) sin(omegat) and v(out)=V(M) sin(omegat+DeltaPhi), where DeltaPhi is in the range 0, pi/2 or -pi/2, 0 and is not dependent on the frequency value. It is based on a negative resistor and it requires very few components. SPICE simulations and measurements on an experimental setup confirm the theoretical analysis.

Chemical interaction in resistors based on lead ruthenite with additions of niobium(5) oxide compounds

International Nuclear Information System (INIS)

Lozinskij, N.S.; Shevtsova, N.A.; Gruba, A.I.; Volkov, V.I.

1986-01-01

The method of X-ray phase analysis was used to study chemical interaction in isothermal cross-section of Pb 2 RU 2 O 6 -Nb 2 O 5 , Rbsub(2)Rusub(2)Osub(6)-NbWOsub(5.5) and Rb 2 Ru 2 O 6 -Pb 2 Nb 2 O 7 systems at 850 deg C as well as in models of real ruthenium resistors. Chemical interaction is stated to take place in systems with niobium (5) oxide and NbWOsub(5.5). Niobium (5) and tungsten (6) displace ruthenium (4) from its compounds with formation of their lead salts. Similar chemical interactions between current-carrying phase of the resistor and modifiers representing niobium-containing take place in models of components of the studied systems take place in models of resistors

High-precision ID-TIMS zircon U-Pb geochronology using new 1013 Ohm resistors

Science.gov (United States)

Von Quadt, A.; Buret, Y.; Large, S.; Peytcheva, I.; Trinquier, A.; Wotzlaw, J. F.

2015-12-01

Faraday cups equipped with high gain amplifiers provide a means to measure small ion beams in static mode without the limited linear range of ion counting systems. We tested the application of newly available 1013 Ohm resistors to ID-TIMS zircon U-Pb geochronology using a range of natural and synthetic reference materials. The TritonPlus-RPQ at the Institute of Geochemistry and Petrology, ETH Zurich, is equipped with five new 1013 Ohm resistors and one MasCom secondary electron multiplier, allowing to measure the 202-204-205-206-207-208Pb masses in static mode. U is measured subsequently as U-oxide (265-267-270UO2) during a second step, also in static Faraday mode. The gain calibration of the 1013 Ohm resistors was performed using the procedure of Trinquier (2014), with 144Nd-146Nd being measured using 1011 Ohm resistor and 142-143-145-148-150Nd being measured using 1013 Ohm resitors (Trinquier, 2014; Koornneef et al., 2014). Standard deviations of the noise in all five new 1013 Ohm resistors are lower than 5.0 x 10-6 over a 6 month period, with no shift occurring over this time interval. This new detector set-up was tested by analyzing natural zircon standard materials and synthetic U/Pb solutions (www.earthime.org), ranging in age from ~2 Ma to ~600 Ma. All natural zircon standards were chemically abraded (Mattinson, 2005) and all samples were spiked with the ET2535 tracer solution. U-Pb dates obtained using the static measurement routine are compared to measurements employing dynamic peak jumping routines on the MasCom multiplier. This study illustrates the benefits and current limitations of using high gain amplifiers to measure small ion beams for zircon U-Pb geochronology compared to conventional dynamic ion counting techniques. Mattinson, J.M. (2005) Chemical Geology 220:47-66; Trinquier, A. (2014) Application Note 30281; Koornneef, J. et al (2014) Analytica Chimica Acta 819:49-55.

Ultrafast Silicon-based Modulators using Optical Switching of Vanadium Dioxide

Science.gov (United States)

2014-12-04

away from the central device, and mounted on an XY positioning stage. Piezo -controled XYZ stages were used to position and couple light to/from...circuit consisting of our device in series with a current limiting resistor of 50Ω (see Fig. 10c inset) [23]. The voltage across this resistor was...across the current limiting resistor when two different 10ns voltage pulses are applied: one below the threshold voltage needed to induce the VO2

Power supply connection for ionizing radiation detection probes

International Nuclear Information System (INIS)

Zajic, J.

1990-01-01

One wire of the supply line is connected, through a diode in the forward direction, to the input terminal of the voltage stabilizer, and through the first resistor to the current limiter terminal of the voltage stabilizer, and also directly to the pulse separator terminal. The current limiter terminal of the voltage stabilizer is connected, through the second resistor, to the output terminal of the voltage stabilizer, and through the first capacitor to the voltage stabilizer earthing terminal, the earthing terminal of the pulse separator and through the other wire of the supply line to the earthing terminal of the detection probe. Furthermore, the input terminal of the voltage stabilizer is connected to a parallel combination of the third resistor with the second capacitor, whose other end is connected to the earthing terminal of the voltage stabilizer. The main asset of this connection consists in the high-frequency matching of the supply line being accomplished by a suitable choice of the resistor value without affecting the voltage for the detection probe. (M.D.)

Thermal resistor on the base of silicon and some polymer semiconductors

International Nuclear Information System (INIS)

Marupov, R.; Kasimov, Sh.T.; Achilov, T.Kh.; Karimov, Kh.S.; Akhmedov, Kh.M.

1995-01-01

The purpose of present work is investigation electrical properties ofthermal resistors which was made from second cast poly-crystal silicon,poly-carbazole, and compositions of poly-crystal silicon and poly-carbazole

An improved low-voltage ride-through performance of DFIG based wind plant using stator dynamic composite fault current limiter.

Science.gov (United States)

Gayen, P K; Chatterjee, D; Goswami, S K

2016-05-01

In this paper, an enhanced low-voltage ride-through (LVRT) performance of a grid connected doubly fed induction generator (DFIG) has been presented with the usage of stator dynamic composite fault current limiter (SDCFCL). This protection circuit comprises of a suitable series resistor-inductor combination and parallel bidirectional semiconductor switch. The SDCFCL facilitates double benefits such as reduction of rotor induced open circuit voltage due to increased value of stator total inductance and concurrent increase of rotor impedance. Both effects will limit rotor circuit over current and over voltage situation more secured way in comparison to the conventional scheme like the dynamic rotor current limiter (RCL) during any type of fault situation. The proposed concept is validated through the simulation study of the grid integrated 2.0MW DFIG. Copyright © 2016 ISA. Published by Elsevier Ltd. All rights reserved.

Measurement of small ion beams by thermal ionisation mass spectrometry using new 10(13) Ohm resistors.

Science.gov (United States)

Koornneef, J M; Bouman, C; Schwieters, J B; Davies, G R

2014-03-28

We tested 5 newly manufactured - prototype - 10(13)Ohm resistors in the feedback loop of Faraday cup amplifiers to measure small ion beams by Thermal Ionisation Mass Spectrometry (TIMS). The high Ohmic resistors installed in the TRITON Plus at the VU University Amsterdam theoretically have 10 times lower noise levels relative to the default 10(11)Ohm resistors. To investigate the precision and accuracy of analyses using these new amplifiers we measured Sr and Nd isotopes of reference standards at a range of ion currents (3.2×10(-16) to 1×10(-12) A, corresponding to intensities of 32 μV to 100 mV on a default 10(11)Ohm amplifier) and on small amounts of material (100 and 10 pg). Internal precision and external reproducibility for Sr and Nd isotope ratios are both better when collected on 10(13) compared 10(12)Ohm resistors and to the default 10(11)Ohm resistors. At an (87)Sr ion current of 3×10(-14) A (3 mV on a 10(11)Ohm amplifier) the internal precision (2 SE) of (87)Sr/(86)Sr is 5 times better for 10(13)Ohm resistors compared to 10(11)Ohm resistors. The external reproducibility (2 SD) at this beam intensity is 9 times better. Multiple 100 and 10 pg Sr standards, ran to exhaustion, yielded low (87)Sr/(86)Sr compared to the long term average (e.g. 10 pg average=0.710083±164 (n=11) instead of 0.710244±12, n=73). The average off-set for 10 pg standards can be explained by a loading blank contribution of 1.3 pg. In contrast, Nd data on 100 pg and 10 pg samples are accurate suggesting that Nd loading blanks do not compromise the data. The external reproducibility of (143)Nd/(144)Nd on 100 pg samples is 125 ppm and 3.3‰ on 10 pg samples (2 RSD=relative standard deviation, n=10). Thus, variability in Nd and Sr isotope ratios in the 4th decimal place, e.g. (143)Nd/(144)Nd 0.5110-0.5119 or (87)Sr/(86)Sr 0.7100-0.7109, can be resolved in 10 to 100 pg samples provided that the procedural blanks and chemical separation are optimal. For measurements in the beam

A study on embedded resistor components fabricated by laser micro-cladding and rapid prototype

International Nuclear Information System (INIS)

Li Huiling; Zeng Xiaoyan

2006-01-01

With the rapid development of IC and packaging, electronic devices are required to be smaller, to have a high-density integration, to become multifunction and to be of lower cost and high-reliability. Thick-film technology is not able to meet the current developing demands because of its shortcomings, such as the limit of pattern resolution, the severe torsion and delay of high-speed signal transmission. The speed and quality of signal transmission will be improved if embedded resistor components are directly integrated in the multiplayer substrate of multi-chip or laminated module, and high-density integration and reliability are achieved because the short interconnection and the less soldering point. In this paper, a technique named laser micro-cladding and rapid prototype is used to directly fabricate embedded resistor units on the multiplayer ceramic substrate without using a mask and high-temperature sintering, and without trimming resistor, which will simplify processing and decrease cost as well as improving high-speed and reliable performance

Design and fabrication of carbon nanotube field-emission cathode with coaxial gate and ballast resistor.

Science.gov (United States)

Sun, Yonghai; Yeow, John T W; Jaffray, David A

2013-10-25

A low density vertically aligned carbon nanotube-based field-emission cathode with a ballast resistor and coaxial gate is designed and fabricated. The ballast resistor can overcome the non-uniformity of the local field-enhancement factor at the emitter apex. The self-aligned fabrication process of the coaxial gate can avoid the effects of emitter tip misalignment and height non-uniformity. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanoporous carbon tunable resistor/transistor and methods of production thereof

Science.gov (United States)

Biener, Juergen; Baumann, Theodore F; Dasgupta, Subho; Hahn, Horst

2014-04-22

In one embodiment, a tunable resistor/transistor includes a porous material that is electrically coupled between a source electrode and a drain electrode, wherein the porous material acts as an active channel, an electrolyte solution saturating the active channel, the electrolyte solution being adapted for altering an electrical resistance of the active channel based on an applied electrochemical potential, wherein the active channel comprises nanoporous carbon arranged in a three-dimensional structure. In another embodiment, a method for forming the tunable resistor/transistor includes forming a source electrode, forming a drain electrode, and forming a monolithic nanoporous carbon material that acts as an active channel and selectively couples the source electrode to the drain electrode electrically. In any embodiment, the electrolyte solution saturating the nanoporous carbon active channel is adapted for altering an electrical resistance of the nanoporous carbon active channel based on an applied electrochemical potential.

Dispersive dielectric and conductive effects in 2D resistor-capacitor networks.

Science.gov (United States)

Hamou, R F; Macdonald, J R; Tuncer, E

2009-01-14

How to predict and better understand the effective properties of disordered material mixtures has been a long-standing problem in different research fields, especially in condensed matter physics. In order to address this subject and achieve a better understanding of the frequency-dependent properties of these systems, a large 2D L × L square structure of resistors and capacitors was used to calculate the immittance response of a network formed by random filling of binary conductor/insulator phases with 1000 Ω resistors and 10 nF capacitors. The effects of percolating clusters on the immittance response were studied statistically through the generation of 10 000 different random network samples at the percolation threshold. The scattering of the imaginary part of the immittance near the dc limit shows a clear separation between the responses of percolating and non-percolating samples, with the gap between their distributions dependent on both network size and applied frequency. These results could be used to monitor connectivity in composite materials. The effects of the content and structure of the percolating path on the nature of the observed dispersion were investigated, with special attention paid to the geometrical fractal concept of the backbone and its influence on the behavior of relaxation-time distributions. For three different resistor-capacitor proportions, the appropriateness of many fitting models was investigated for modeling and analyzing individual resistor-capacitor network dispersed frequency responses using complex-nonlinear-least-squares fitting. Several remarkable new features were identified, including a useful duality relationship and the need for composite fitting models rather than either a simple power law or a single Davidson-Cole one. Good fits of data for fully percolating random networks required two dispersive fitting models in parallel or series, with a cutoff at short times of the distribution of relaxation times of one of

Two-Volt Josephson Arbitrary Waveform Synthesizer Using Wilkinson Dividers

Science.gov (United States)

Flowers-Jacobs, Nathan E.; Fox, Anna E.; Dresselhaus, Paul D.; Schwall, Robert E.; Benz, Samuel P.

2016-01-01

The root-mean-square (rms) output voltage of the NIST Josephson arbitrary waveform synthesizer (JAWS) has been doubled from 1 V to a record 2 V by combining two new 1 V chips on a cryocooler. This higher voltage will improve calibrations of ac thermal voltage converters and precision voltage measurements that require state-of-the-art quantum accuracy, stability, and signal-to-noise ratio. We achieved this increase in output voltage by using four on-chip Wilkinson dividers and eight inner-outer dc blocks, which enable biasing of eight Josephson junction (JJ) arrays with high-speed inputs from only four high-speed pulse generator channels. This approach halves the number of pulse generator channels required in future JAWS systems. We also implemented on-chip superconducting interconnects between JJ arrays, which reduces systematic errors and enables a new modular chip package. Finally, we demonstrate a new technique for measuring and visualizing the operating current range that reduces the measurement time by almost two orders of magnitude and reveals the relationship between distortion in the output spectrum and output pulse sequence errors. PMID:27453676

Processing, microstructure, and electric properties of buried resistors in low-temperature co-fired ceramics

International Nuclear Information System (INIS)

Yang, Pin; Rodriguez, Mark A.; Kotula, Paul; Miera, Brandon K.; Dimos, Duane

2001-01-01

The electrical properties of ruthenium oxide based devitrifiable resistors embedded within low-temperature co-fired ceramics were investigated from -100 o C to 100 o C. Special attention was given to the processing conditions and their effects on resistance and temperature coefficient of resistance (TCR). Results indicate that within this temperature range the conductance for these buried resistors is limited by tunneling of charge carriers through the thin glass layer between ruthenium oxide particles. A modified version of the tunneling barrier model is proposed to account for the microstructure ripening observed during thermal processing. The model parameters determined from curve fitting show that charging energy (i.e., the energy required for a charge carrier to tunnel through the glass barrier) is strongly dependent on particle size and particle--particle separation between ruthenium oxide grains. Initial coarsening of ruthenium oxide grains was found to reduce the charging energy and lower the resistance. However, when extended ripening occurs, the increase in particle--particle separation increases the charging energy, reduces the tunneling probability and gives rise to a higher resistance. The tradeoff between these two effects results in an optimum microstructure with a minimum resistance and TCR. Furthermore, the TCR of these buried resistors has been shown to be governed by the magnitude of the charging energy. Model parameters determined by our analysis appear to provide quantitative physical interpretations to the microstructural changes in the resistor, which in turn, are controlled by the processing conditions

Design, development and evaluation of a resistor-based multiplexing circuit for a 20×20 SiPM array

International Nuclear Information System (INIS)

Wang, Zhonghai; Sun, Xishan; Lou, Kai; Meier, Joseph; Zhou, Rong; Yang, Chaowen; Zhu, Xiaorong; Shao, Yiping

2016-01-01

One technical challenge in developing a large-size scintillator detector with multiple Silicon Photomultiplier (SiPM) arrays is to read out a large number of detector output channels. To achieve this, different signal multiplexing circuits have been studied and applied with different performances and cost-effective tradeoffs. Resistor-based multiplexing circuits exhibit simplicity and signal integrity, but also present the disadvantage of timing shift among different channels. In this study, a resistor-based multiplexing circuit for a large-sized SiPM array readout was developed and evaluated by simulation and experimental studies. Similarly to a multiplexing circuit used for multi-anode PMT, grounding and branching resistors were connected to each SiPM output channel. The grounding resistor was used to simultaneously reduce the signal crosstalk among different channels and to improve timing performance. Both grounding and branching resistor values were optimized to maintain a balanced performance of the event energy, timing, and positioning. A multiplexing circuit was implemented on a compact PCB and applied for a flat-panel detector which consisted of a 32×32 LYSO scintillator crystals optically coupled to 5×5 SiPM arrays for a total 20×20 output channels. Test results showed excellent crystal identification for all 1024 LYSO crystals (each with 2×2×30 mm"3 size) with "2"2Na flood-source irradiation. The measured peak-to-valley ratio from typical crystal map profile is around 3:1 to 6.6:1, an average single crystal energy resolution of about 17.3%, and an average single crystal timing resolution of about 2 ns. Timing shift among different crystals, as reported in some other resistor-based multiplexing circuit designs, was not observed. In summary, we have designed and implemented a practical resistor-based multiplexing circuit that can be readily applied for reading out a large SiPM array with good detector performance.

Design, development and evaluation of a resistor-based multiplexing circuit for a 20×20 SiPM array

Energy Technology Data Exchange (ETDEWEB)

Wang, Zhonghai [College of Physical Science and Technology, Key Laboratory of Radiation Physics and Technology, Ministry of Education, Sichuan University, Chengdu (China); Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, Tx (United States); Sun, Xishan [Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, Tx (United States); Lou, Kai [Department of Electrical and Computer Engineering, Rice University, Houston, Tx (United States); Meier, Joseph [Department of Imaging Physics, The University of Texas MD Anderson Cancer Center, Houston, Tx (United States); Zhou, Rong; Yang, Chaowen [College of Physical Science and Technology, Key Laboratory of Radiation Physics and Technology, Ministry of Education, Sichuan University, Chengdu (China); Zhu, Xiaorong [Department of Radiation Physics, The University of Texas MD Anderson Cancer Center, Houston, Tx (United States); Shao, Yiping [Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, Tx (United States)

2016-04-21

One technical challenge in developing a large-size scintillator detector with multiple Silicon Photomultiplier (SiPM) arrays is to read out a large number of detector output channels. To achieve this, different signal multiplexing circuits have been studied and applied with different performances and cost-effective tradeoffs. Resistor-based multiplexing circuits exhibit simplicity and signal integrity, but also present the disadvantage of timing shift among different channels. In this study, a resistor-based multiplexing circuit for a large-sized SiPM array readout was developed and evaluated by simulation and experimental studies. Similarly to a multiplexing circuit used for multi-anode PMT, grounding and branching resistors were connected to each SiPM output channel. The grounding resistor was used to simultaneously reduce the signal crosstalk among different channels and to improve timing performance. Both grounding and branching resistor values were optimized to maintain a balanced performance of the event energy, timing, and positioning. A multiplexing circuit was implemented on a compact PCB and applied for a flat-panel detector which consisted of a 32×32 LYSO scintillator crystals optically coupled to 5×5 SiPM arrays for a total 20×20 output channels. Test results showed excellent crystal identification for all 1024 LYSO crystals (each with 2×2×30 mm{sup 3} size) with {sup 22}Na flood-source irradiation. The measured peak-to-valley ratio from typical crystal map profile is around 3:1 to 6.6:1, an average single crystal energy resolution of about 17.3%, and an average single crystal timing resolution of about 2 ns. Timing shift among different crystals, as reported in some other resistor-based multiplexing circuit designs, was not observed. In summary, we have designed and implemented a practical resistor-based multiplexing circuit that can be readily applied for reading out a large SiPM array with good detector performance.

Resistor Extends Life Of Battery In Clocked CMOS Circuit

Science.gov (United States)

Wells, George H., Jr.

1991-01-01

Addition of fixed resistor between battery and clocked complementary metal oxide/semiconductor (CMOS) circuit reduces current drawn from battery. Basic idea to minimize current drawn from battery by operating CMOS circuit at lowest possible current consistent with use of simple, fixed off-the-shelf components. Prolongs lives of batteries in such low-power CMOS circuits as watches and calculators.

Heat control in HVDC resistive divider by PID and NN controllers

International Nuclear Information System (INIS)

Yilmaz, S.; Dincer, H.; Eksin, I.; Kalenderli, O.

2007-01-01

In this study, a control system is presented that is devised to increase measurement precisions within a prototype high voltage DC resistive divider (HVDC-RD). Since one of the major sources of measurement errors in such devices is the self heating effect, a system controlling the temperature within the high voltage DC resistive divider is devised so that suitable and stable temperature conditions are maintained that, in return, will decrease the measurement errors. The resistive divider system is cooled by oil, and PID and neural network (NN) controllers try to keep the temperature within the prescribed limits. The system to be controlled exhibits a nonlinear character, and therefore, a control approach based on NN controllers is proposed. Thus, a system that can fulfill the various requirements dictated by the designer is constructed. The performance of the NN controller is compared with that of the PID controller developed for the same purpose, and the values of the performance indices indicate the superiority of the NN controller over that of the classical PID controller

A 2-megawatt load for testing high voltage DC power supplies

International Nuclear Information System (INIS)

Horan, D.; Kustom, R.; Ferguson, M.; Primdahl, K.

1993-01-01

A high power water-cooled resistive load, capable of dissipating 2 Megawatts at 95 kilovolts is being designed and built. The load utilizes wirewound resistor elements suspended inside insulating tubing contained within a pressure vessel which is supplied a continuous flow of deionized water for coolant. A sub-system of the load is composed of non-inductive resistor elements in an oil tank. Power tests conducted on various resistor types indicate that dissipation levels as high as 22 times the rated dissipation in air can be achieved when the resistors are placed in a turbulent water flow of at least 15 gallons per minute. Using this data, the load was designed using 100 resistor elements in a series arrangement. A single-wall 316 stainless steel pressure vessel with flanged torispherical heads is built to contain the resistor assembly and deionized water. The resistors are suspended within G-11 tubing which span the cylindrical length of the vessel. These tubes are supported by G-10 baffles which also increase convection from the tubes by promoting turbulence within the surrounding water

Pyramidal resistor networks for electrical impedance tomography with partial boundary measurements

International Nuclear Information System (INIS)

Borcea, L; Mamonov, A V; Druskin, V; Vasquez, F Guevara

2010-01-01

We introduce an inversion algorithm for electrical impedance tomography (EIT) with partial boundary measurements in two dimensions. It gives stable and fast reconstructions using sparse parameterizations of the unknown conductivity on optimal grids that are computed as part of the inversion. We follow the approach in Borcea et al (2008 Inverse Problems 24 035013) and Vasquez (2006 PhD thesis Rice University, Houston, TX, USA) that connects inverse discrete problems for resistor networks to continuum EIT problems, using optimal grids. The algorithm in Borcea et al (2008 Inverse Problems 24 035013) and Vasquez (2006 PhD Thesis Rice University, Houston, TX, USA) is based on circular resistor networks, and solves the EIT problem with full boundary measurements. It is extended in Borcea et al (2010 Inverse Problems 26 045010) to EIT with partial boundary measurements, using extremal quasi-conformal mappings that transform the problem to one with full boundary measurements. Here we introduce a different class of optimal grids, based on resistor networks with pyramidal topology, that is better suited for the partial measurements setup. We prove the unique solvability of the discrete inverse problem for these networks and develop an algorithm for finding them from the measurements of the Dirichlet to Neumann map. Then, we show how to use the networks to define the optimal grids and to approximate the unknown conductivity. We assess the performance of our approach with numerical simulations and compare the results with those in Borcea et al (2010)

Voltage-Ratio Calibration System up to 50 kHz

Science.gov (United States)

Trigo, Leonardo; Slomovitz, Daniel; Faverio, Carlos; Kyriazis, Gregory

2018-03-01

This paper describes a voltage-ratio measuring system that can be used up to 50 kHz with high accuracy. It is based on two Keysight 3458A digital multimeters, working in DCV sampling mode. An external trigger based on a rubidium clock, drives both digital multimeters. It is applied to the calibration of a set of voltage dividers with primary voltages from 4 V to 1024 V.

Determining the influence of temperature on various types of standard resistors

CSIR Research Space (South Africa)

Marais, EL

2006-10-01

Full Text Available Types of Standard Resistors Speaker / Author: E.L. Marais CSIR National Metrology Laboratory PO Box 395, Pretoria, 0001, South Africa Email: elmarais@csir.co.za Phone: 012 841 3013 Fax: 012 841 2131 Abstract The temperature coefficient...

Electric circuits and signals

CERN Document Server

Sabah, Nassir H

2007-01-01

Circuit Variables and Elements Overview Learning Objectives Electric Current Voltage Electric Power and Energy Assigned Positive Directions Active and Passive Circuit Elements Voltage and Current Sources The Resistor The Capacitor The Inductor Concluding Remarks Summary of Main Concepts and Results Learning Outcomes Supplementary Topics on CD Problems and Exercises Basic Circuit Connections and Laws Overview Learning Objectives Circuit Terminology Kirchhoff's Laws Voltage Division and Series Connection of Resistors Current Division and Parallel Connection of Resistors D-Y Transformation Source Equivalence and Transformation Reduced-Voltage Supply Summary of Main Concepts and Results Learning Outcomes Supplementary Topics and Examples on CD Problems and Exercises Basic Analysis of Resistive Circuits Overview Learning Objectives Number of Independent Circuit Equations Node-Voltage Analysis Special Considerations in Node-Voltage Analysis Mesh-Current Analysis Special Conside...

Logarithmic circuit with wide dynamic range

Science.gov (United States)

Wiley, P. H.; Manus, E. A. (Inventor)

1978-01-01

A circuit deriving an output voltage that is proportional to the logarithm of a dc input voltage susceptible to wide variations in amplitude includes a constant current source which forward biases a diode so that the diode operates in the exponential portion of its voltage versus current characteristic, above its saturation current. The constant current source includes first and second, cascaded feedback, dc operational amplifiers connected in negative feedback circuit. An input terminal of the first amplifier is responsive to the input voltage. A circuit shunting the first amplifier output terminal includes a resistor in series with the diode. The voltage across the resistor is sensed at the input of the second dc operational feedback amplifier. The current flowing through the resistor is proportional to the input voltage over the wide range of variations in amplitude of the input voltage.

Studies of tantalum nitride thin film resistors

International Nuclear Information System (INIS)

Langley, R.A.

1975-01-01

Backscattering of 2-MeV He ions was used to correlate the electrical properties of sputtered TaN/sub x/ thin-film resistors with their N content. The properties measured were sheet resistance, differential Seebeck potential (DSP), thermal coefficient of resistance (TCR), and stability. Resistivity and DSP are linearly dependent on N content for N/Ta ratios of 0.25 to 0.55. TCR decreases sharply below N/Ta = 0.35 and is relatively constant from 0.35 to 0.55. Stability is independent of N content. (DLC)

Directly writing resistor, inductor and capacitor to composite functional circuits: a super-simple way for alternative electronics.

Science.gov (United States)

Gao, Yunxia; Li, Haiyan; Liu, Jing

2013-01-01

The current strategies for making electronic devices are generally time, water, material and energy consuming. Here, the direct writing of composite functional circuits through comprehensive use of GaIn10-based liquid metal inks and matching material is proposed and investigated, which is a rather easy going and cost effective electronics fabrication way compared with the conventional approaches. Owing to its excellent adhesion and electrical properties, the liquid metal ink was demonstrated as a generalist in directly making various basic electronic components such as planar resistor, inductor and capacitor or their combination and thus composing circuits with expected electrical functions. For a precise control of the geometric sizes of the writing, a mask with a designed pattern was employed and demonstrated. Mechanisms for justifying the chemical components of the inks and the magnitudes of the target electronic elements so as to compose various practical circuits were disclosed. Fundamental tests on the electrical components including capacitor and inductor directly written on paper with working time up to 48 h and elevated temperature demonstrated their good stability and potential widespread adaptability especially when used in some high frequency circuits. As the first proof-of-concept experiment, a typical functional oscillating circuit including an integrated chip of 74HC04 with a supply voltage of 5 V, a capacitor of 10 nF and two resistors of 5 kΩ and 1 kΩ respectively was directly composed on paper through integrating specific electrical elements together, which presented an oscillation frequency of 8.8 kHz. The present method significantly extends the roles of the metal ink in recent works serving as only a single electrical conductor or interconnecting wires. It opens the way for directly writing out complex functional circuits or devices on different substrates. Such circuit composition strategy has generalized purpose and can be extended to more

Leaf venation, as a resistor, to optimize a switchable IR absorber.

Science.gov (United States)

Alston, M E; Barber, R

2016-08-24

Leaf vascular patterns are the mechanisms and mechanical support for the transportation of fluidics for photosynthesis and leaf development properties. Vascular hierarchical networks in leaves have far-reaching functions in optimal transport efficiency of functional fluidics. Embedding leaf morphogenesis as a resistor network is significant in the optimization of a translucent thermally functional material. This will enable regulation through pressure equalization by diminishing flow pressure variation. This paper investigates nature's vasculature networks that exhibit hierarchical branching scaling applied to microfluidics. To enable optimum potential for pressure drop regulation by algorithm design. This code analysis of circuit conduit optimization for transport fluidic flow resistance is validated against CFD simulation, within a closed loop network. The paper will propose this self-optimization, characterization by resistance seeking targeting to determine a microfluidic network as a resistor. To advance a thermally function material as a switchable IR absorber.

Biased resistor network model for electromigration failure and related phenomena in metallic lines

Science.gov (United States)

Pennetta, C.; Alfinito, E.; Reggiani, L.; Fantini, F.; Demunari, I.; Scorzoni, A.

2004-11-01

Electromigration phenomena in metallic lines are studied by using a biased resistor network model. The void formation induced by the electron wind is simulated by a stochastic process of resistor breaking, while the growth of mechanical stress inside the line is described by an antagonist process of recovery of the broken resistors. The model accounts for the existence of temperature gradients due to current crowding and Joule heating. Alloying effects are also accounted for. Monte Carlo simulations allow the study within a unified theoretical framework of a variety of relevant features related to the electromigration. The predictions of the model are in excellent agreement with the experiments and in particular with the degradation towards electrical breakdown of stressed Al-Cu thin metallic lines. Detailed investigations refer to the damage pattern, the distribution of the times to failure (TTFs), the generalized Black’s law, the time evolution of the resistance, including the early-stage change due to alloying effects and the electromigration saturation appearing at low current densities or for short line lengths. The dependence of the TTFs on the length and width of the metallic line is also well reproduced. Finally, the model successfully describes the resistance noise properties under steady state conditions.

Random resistor network model of minimal conductivity in graphene.

Science.gov (United States)

Cheianov, Vadim V; Fal'ko, Vladimir I; Altshuler, Boris L; Aleiner, Igor L

2007-10-26

Transport in undoped graphene is related to percolating current patterns in the networks of n- and p-type regions reflecting the strong bipolar charge density fluctuations. Finite transparency of the p-n junctions is vital in establishing the macroscopic conductivity. We propose a random resistor network model to analyze scaling dependencies of the conductance on the doping and disorder, the quantum magnetoresistance and the corresponding dephasing rate.

Scintillation detectors in experiments on plasma accelerators

International Nuclear Information System (INIS)

Bystritskij, V.M.; Gerasimov, V.V.; Kublikov, R.V.; Parzhitskij, S.S.; Smirnov, V.S.; Wozniak, J.; Dudkin, G.N.; Nechaev, B.A.; Padalko, V.M.

2005-01-01

The gating circuits for photomultipliers of scintillation detectors operating in powerful pulsed electromagnetic and nuclear radiation fields are investigated. PMTs with the jalousie-type dynode system and with the linear dynode system are considered. The basic gating circuits of the photomultipliers involving active and resistor high-voltage dividers are given. The results of the investigations are important for experiments in which it is necessary to discriminate in time the preceding background radiation and the process of interest. (author)

Depth of interaction detection with enhanced position-sensitive proportional resistor network

International Nuclear Information System (INIS)

Lerche, Ch.W.; Benlloch, J.M.; Sanchez, F.; Pavon, N.; Gimenez, N.; Fernandez, M.; Gimenez, M.; Sebastia, A.; Martinez, J.; Mora, F.J.

2005-01-01

A new method of determining the depth of interaction of γ-rays in thick inorganic scintillation crystals was tested experimentally. The method uses the strong correlation between the width of the scintillation light distribution within large continuous crystals and the γ-ray's interaction depth. This behavior was successfully reproduced by a theoretical model distribution based on the inverse square law. For the determination of the distribution's width, its standard deviation σ is computed using an enhanced position-sensitive proportional resistor network which is often used in γ-ray-imaging devices. Minor changes of this known resistor network allow the analog and real-time determination of the light distribution's 2nd moment without impairing the measurement of the energy and centroid. First experimental results are presented that confirm that the described method works correctly. Since only some cheap electronic components, but no additional detectors or crystals are required, the main advantage of this method is its low cost

Structural mechanism of voltage-dependent gating in an isolated voltage-sensing domain.

Science.gov (United States)

Li, Qufei; Wanderling, Sherry; Paduch, Marcin; Medovoy, David; Singharoy, Abhishek; McGreevy, Ryan; Villalba-Galea, Carlos A; Hulse, Raymond E; Roux, Benoît; Schulten, Klaus; Kossiakoff, Anthony; Perozo, Eduardo

2014-03-01

The transduction of transmembrane electric fields into protein motion has an essential role in the generation and propagation of cellular signals. Voltage-sensing domains (VSDs) carry out these functions through reorientations of positive charges in the S4 helix. Here, we determined crystal structures of the Ciona intestinalis VSD (Ci-VSD) in putatively active and resting conformations. S4 undergoes an ~5-Å displacement along its main axis, accompanied by an ~60° rotation. This movement is stabilized by an exchange in countercharge partners in helices S1 and S3 that generates an estimated net charge transfer of ~1 eo. Gating charges move relative to a ''hydrophobic gasket' that electrically divides intra- and extracellular compartments. EPR spectroscopy confirms the limited nature of S4 movement in a membrane environment. These results provide an explicit mechanism for voltage sensing and set the basis for electromechanical coupling in voltage-dependent enzymes and ion channels.

A Simple Square Rooting Circuit Based on Operational Amplifiers (OPAMPs

Directory of Open Access Journals (Sweden)

K. C. Selvam

2013-02-01

Full Text Available A simple circuit which accepts a negative voltage as input and provides an output voltage equal to the square root of the input voltage is described in this paper. The square rooting operation is dependent only on the ratio of two resistors and a DC voltage. Hence, the required accuracy can be obtained by employing precision resistors and a stable reference voltage. The feasibility of the circuit is examined by testing the results on a proto type.

Programmable diode/resistor-like behavior of nanostructured vanadium pentoxide xerogel thin film.

Science.gov (United States)

Wan, Zhenni; Darling, Robert B; Anantram, M P

2015-11-11

Electrical properties of a Cr/V2O5/Cr structure are investigated and switching of the device due to electrochemical reactions is observed at low bias (resistor (reverse sweep first). The switching is irreversible and persistent, lasting for more than one month. By performing environmental tests, we prove that water molecules in the atmosphere and intercalated in the xerogel film are involved in the electrochemical reactions. It is proposed that an interfacial layer with reduced oxidation state forms at the Cr/V2O5 interface, and creates a higher Schottky barrier due to rise of electron affinity. Different interfacial layer thicknesses in forward and reverse first sweeps are responsible for different I-V characteristics in subsequent sweeps. The results suggest future applications of these V2O5 thin films in low-power read-only memory devices and diode-resistor networks.

Apparatus with a cooled X-ray source and a high voltage generator

Energy Technology Data Exchange (ETDEWEB)

1977-02-01

Apparatus, especially for a dental application, with an X-ray source and a high voltage generator, whereby the X-ray source and a high voltage generator are contained in a housing, which is filled with a coolant medium, characterised by the housing being divided into two chambers, whereby the X-ray source is in the first chamber and the high voltage generator is in the second chamber and between the chambers a dividing wall is placed for the screening of the X-ray irradiation from the first chamber from the second, whereby at least one of the walls of the second chamber is elastic to accommodate the expansion of the coolant medium.

Thermal analysis and temperature characteristics of a braking resistor for high-speed trains for changes in the braking current

Science.gov (United States)

Lee, Dae-Dong; Kang, Hyun-Il; Shim, Jae-Myung

2015-09-01

Electric brake systems are used in high-speed trains to brake trains by converting the kinetic energy of a railway vehicle to electric energy. The electric brake system consists of a regenerative braking system and a dynamic braking system. When the electric energy generated during the dynamic braking process is changed to heat through the braking resistor, the braking resistor can overheat; thus, failures can occur to the motor block. In this paper, a braking resistor for a high-speed train was used to perform thermal analyses and tests, and the results were analyzed. The analyzed data were used to estimate the dependence of the brake currents and the temperature rises on speed changes up to 300 km/h, at which a test could not be performed.

Implanted Silicon Resistor Layers for Efficient Terahertz Absorption

Science.gov (United States)

Chervenak, J. A.; Abrahams, J.; Allen, C. A.; Benford, D. J.; Henry, R.; Stevenson, T.; Wollack, E.; Moseley, S. H.

2005-01-01

Broadband absorption structures are an essential component of large format bolometer arrays for imaging GHz and THz radiation. We have measured electrical and optical properties of implanted silicon resistor layers designed to be suitable for these absorbers. Implanted resistors offer a low-film-stress, buried absorber that is robust to longterm aging, temperature, and subsequent metals processing. Such an absorber layer is readily integrated with superconducting integrated circuits and standard micromachining as demonstrated by the SCUBA II array built by ROE/NIST (1). We present a complete characterization of these layers, demonstrating frequency regimes in which different recipes will be suitable for absorbers. Single layer thin film coatings have been demonstrated as effective absorbers at certain wavelengths including semimetal (2,3), thin metal (4), and patterned metal films (5,6). Astronomical instrument examples include the SHARC II instrument is imaging the submillimeter band using passivated Bi semimetal films and the HAWC instrument for SOFIA, which employs ultrathin metal films to span 1-3 THz. Patterned metal films on spiderweb bolometers have also been proposed for broadband detection. In each case, the absorber structure matches the impedance of free space for optimal absorption in the detector configuration (typically 157 Ohms per square for high absorption with a single or 377 Ohms per square in a resonant cavity or quarter wave backshort). Resonant structures with -20% bandwidth coupled to bolometers are also under development; stacks of such structures may take advantage of instruments imaging over a wide band. Each technique may enable effective absorbers in imagers. However, thin films tend to age, degrade or change during further processing, can be difficult to reproduce, and often exhibit an intrinsic granularity that creates complicated frequency dependence at THz frequencies. Thick metal films are more robust but the requirement for

Scaling in small-world resistor networks

International Nuclear Information System (INIS)

Korniss, G.; Hastings, M.B.; Bassler, K.E.; Berryman, M.J.; Kozma, B.; Abbott, D.

2006-01-01

We study the effective resistance of small-world resistor networks. Utilizing recent analytic results for the propagator of the Edwards-Wilkinson process on small-world networks, we obtain the asymptotic behavior of the disorder-averaged two-point resistance in the large system-size limit. We find that the small-world structure suppresses large network resistances: both the average resistance and its standard deviation approaches a finite value in the large system-size limit for any non-zero density of random links. We also consider a scenario where the link conductance decays as a power of the length of the random links, l -α . In this case we find that the average effective system resistance diverges for any non-zero value of α

A real time status monitor for transistor bank driver power limit resistor in boost injection kicker power supply

Energy Technology Data Exchange (ETDEWEB)

Mi, J.; Tan, Y.; Zhang, W.

2011-03-28

For years suffering of Booster Injection Kicker transistor bank driver regulator troubleshooting, a new real time monitor system has been developed. A simple and floating circuit has been designed and tested. This circuit monitor system can monitor the driver regulator power limit resistor status in real time and warn machine operator if the power limit resistor changes values. This paper will mainly introduce the power supply and the new designed monitoring system. This real time resistor monitor circuit shows a useful method to monitor some critical parts in the booster pulse power supply. After two years accelerator operation, it shows that this monitor works well. Previously, we spent a lot of time in booster machine trouble shooting. We will reinstall all 4 PCB into Euro Card Standard Chassis when the power supply system will be updated.

A novel Silicon Photomultiplier with bulk integrated quench resistors: utilization in optical detection and tracking applications for particle physics

Energy Technology Data Exchange (ETDEWEB)

Petrovics, Stefan, E-mail: stp@hll.mpg.de [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Andricek, Ladislav [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Diehl, Inge; Hansen, Karsten [DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Jendrysik, Christian [Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg (Germany); Krueger, Katja [DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Lehmann, Raik; Ninkovic, Jelena [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Reckleben, Christian [DESY, Notkestrasse 85, D-22607 Hamburg (Germany); Richter, Rainer; Schaller, Gerhard; Schopper, Florian [Halbleiterlabor der Max-Planck Gesellschaft, Otto-Hahn-Ring 6, D-81739 Munich (Germany); Sefkow, Felix [DESY, Notkestrasse 85, D-22607 Hamburg (Germany)

2017-02-11

Silicon Photomultipliers (SiPMs) are a promising candidate for replacing conventional photomultiplier tubes (PMTs) in many applications, thanks to ongoing developments and advances in their technology. Conventional SiPMs are generally an array of avalanche photo diodes, operated in Geiger mode and read out in parallel, thus leading to the necessity of a high ohmic quenching resistor. This resistor enables passive quenching and is usually located on top of the array, limiting the fill factor of the device. In this paper, a novel detector concept with a bulk integrated quenching resistor will be recapped. In addition, due to other advantages of this novel detector design, a new concept, in which these devices will be utilized as tracking detectors for particle physics applications will be introduced, as well as first simulation studies and experimental measurements of this new approach. - Highlights: • A novel SiPM concept with bulk integrated quenching resistor is shown. • First prototypes of these SiPMs as tracking detectors are proposed. • Simulations of the Geiger efficiency suggest feasible operations at low overbias. • First measurements of the electron detection efficiency show promising results. • Measurements are in good agreement with the simulations.

PC-based control of a high-voltage injector

International Nuclear Information System (INIS)

Constantin, F.

1998-01-01

current control was realized by a stepping motor that rotates a variable resistor through an insulating stick. Two hundred motor steps per complete rotation assumes a very good resolution in driving the filament current between 0 Amps and maximum 40 Amps. The gas flow control is realized by a stepping motor that drives a needle valve. The flow gas can be varied in very small steps. The vacuum read-out is performed by two gauges, Penning and Pirani, providing a 0 to 10 V analog signal. The DC voltages are input to two ADC channels. The current and voltage source control is performed by ADC and DAC channels that drive/read the source output. The outside computer presents an user friendly interface by a Visual Basic program. It permits to vary all the mentioned quantities and reports periodically (at every two seconds) the output values. The user drives the program only with the mouse, having complete control all over the electric hardware inside the injector. A fast reset function is also provided in case of severe malfunction. (author)

PARAMETER REPEATABILITY FOR ECONOMY. A CASE STUDY OF A SIMPLE LINEAR ELECTRICAL DEVICE

Directory of Open Access Journals (Sweden)

Antoni Drapella

2017-06-01

Full Text Available This paper is the first installment of a projected three-part study devoted to both input and output parameter randomness that electrical circuit designers deal with in their work. Parts of the study will differ in the complexity of schemes considered. This paper aims at presenting the methodology while leaving aside the analysis of complex circuits. Therefore, only voltage dividers have been taken into consideration. Four probability distributions of resistor values have been tried: uniform, Gaussian, Laplace and triangular.

Note: Self-biased voltage to suppress secondary electrons by a ZnO varistor in a compact pulsed neutron generator

Science.gov (United States)

Yang, Z.; Li, X.; Li, J.; Long, J. D.; Lan, C. H.; Wang, T.; Dong, P.; He, J. L.

2017-03-01

A large amount of back streaming electrons will bring about a part of current drain on power supply, cause sparking or high-voltage breakdowns, and affect the neutron yield and waveform for a compact sealed-tube pulsed neutron generator. A novel idea which uses a ZnO varistor to provide a constant self-biased voltage to suppress the secondary electrons is introduced. The I-V curve for the ZnO varistor was measured in the experiment. The effects of suppressing the secondary electrons were investigated using a ZnO varistor, linear resistors, and an independent power supply, respectively. The results show that the secondary electrons are suppressed effectively by the compact ZnO varistor, while not increasing the size and the component of the device. It is a promising design for compact sealed-tube neutron generators.

Corrections to scaling in random resistor networks and diluted continuous spin models near the percolation threshold.

Science.gov (United States)

Janssen, Hans-Karl; Stenull, Olaf

2004-02-01

We investigate corrections to scaling induced by irrelevant operators in randomly diluted systems near the percolation threshold. The specific systems that we consider are the random resistor network and a class of continuous spin systems, such as the x-y model. We focus on a family of least irrelevant operators and determine the corrections to scaling that originate from this family. Our field theoretic analysis carefully takes into account that irrelevant operators mix under renormalization. It turns out that long standing results on corrections to scaling are respectively incorrect (random resistor networks) or incomplete (continuous spin systems).

Protection for a thermonuclear device

International Nuclear Information System (INIS)

Shimada, Ryuichi; Sasatani, Shin-ichi.

1983-01-01

Purpose: To suppress an abnormal voltage due to potential changes by a characteristic impedance composed of a discharge gap, a resistance and a capacitor, as well as absorb the energy of the abnormal voltage by properly selecting the current capacity of the resistor. Constitution: An abnormal voltage generated in a current transformer coils is detected by an abnormal voltage detector and an output signal therefrom causes a high voltage generating device to generate a high voltage, whereby electric discharge is taken place across a discharge gap to absorb the energy of the abnormal voltage in a resistor and a capacitor. For the abnormal voltage from the plasmas, the voltage across the transformer coils can be suppressed to some extent by selecting the impedance for the current transformer coils and the impedance for the parallel circuit of the resistor and the capacitor to an appropriate ratio. While on the other hand, after throwing a switcher by the actuation of a switcher control device, the energy for the abnormal voltage can sufficiently be absorbed through the internal resistance of the transformer coils and the resistance for the entire current. (Yoshino, Y.)

High-voltage measurements on the 5 ppm relative uncertainty level with collinear laser spectroscopy

Science.gov (United States)

Krämer, J.; König, K.; Geppert, Ch; Imgram, P.; Maaß, B.; Meisner, J.; Otten, E. W.; Passon, S.; Ratajczyk, T.; Ullmann, J.; Nörtershäuser, W.

2018-04-01

We present the results of high-voltage collinear laser spectroscopy measurements on the 5 ppm relative uncertainty level using a pump and probe scheme at the 4s ^2S1/2 → 4p ^2P3/2 transition of {\\hspace{0pt}}40Ca+ involving the 3d ^2D5/2 metastable state. With two-stage laser interaction and a reference measurement we can eliminate systematic effects such as differences in the contact potentials due to different electrode materials and thermoelectric voltages, and the unknown starting potential of the ions in the ion source. Voltage measurements were performed between  -5 kV and  -19 kV and parallel measurements with stable high-voltage dividers calibrated to 5 ppm relative uncertainty were used as a reference. Our measurements are compatible with the uncertainty limits of the high-voltage dividers and demonstrate an unprecedented (factor of 20) increase in the precision of direct laser-based high-voltage measurements.

Directly writing resistor, inductor and capacitor to composite functional circuits: a super-simple way for alternative electronics.

Directory of Open Access Journals (Sweden)

Yunxia Gao

Full Text Available BACKGROUND: The current strategies for making electronic devices are generally time, water, material and energy consuming. Here, the direct writing of composite functional circuits through comprehensive use of GaIn10-based liquid metal inks and matching material is proposed and investigated, which is a rather easy going and cost effective electronics fabrication way compared with the conventional approaches. METHODS: Owing to its excellent adhesion and electrical properties, the liquid metal ink was demonstrated as a generalist in directly making various basic electronic components such as planar resistor, inductor and capacitor or their combination and thus composing circuits with expected electrical functions. For a precise control of the geometric sizes of the writing, a mask with a designed pattern was employed and demonstrated. Mechanisms for justifying the chemical components of the inks and the magnitudes of the target electronic elements so as to compose various practical circuits were disclosed. RESULTS: Fundamental tests on the electrical components including capacitor and inductor directly written on paper with working time up to 48 h and elevated temperature demonstrated their good stability and potential widespread adaptability especially when used in some high frequency circuits. As the first proof-of-concept experiment, a typical functional oscillating circuit including an integrated chip of 74HC04 with a supply voltage of 5 V, a capacitor of 10 nF and two resistors of 5 kΩ and 1 kΩ respectively was directly composed on paper through integrating specific electrical elements together, which presented an oscillation frequency of 8.8 kHz. CONCLUSIONS: The present method significantly extends the roles of the metal ink in recent works serving as only a single electrical conductor or interconnecting wires. It opens the way for directly writing out complex functional circuits or devices on different substrates. Such circuit

Number-to-voltage converter on commutated condensers

International Nuclear Information System (INIS)

Grekhov, Yu.N.

1975-01-01

A code-voltage converter using precision voltage dividers based on commutated capacitors [1] is described which is distinguished by the absence of precision elements. Each digit includes eight field-effect transistors in two 1KT682 microcircuit assemblies and three microcapacitors with a conventional unstable capacitance 6200 pF +- 50%. The converter has a speed of response that is not inferior to that of converters based on R-2R matrices, while in time stability of the characteristics, low interference level, and low output impedance it is superior to such converters

An evaluation of a translator for finite element data to resistor/capacitor data for the heat diffusion equation

International Nuclear Information System (INIS)

Manteufel, R.D.; Klein, D.E.; Yoshimura, H.R.

1988-01-01

This paper evaluates a translator for finite element data to resistor/capacitor data (FEM/RC) for the numerical solution of heat diffusion problems. The translator involves the derivation of thermal resistors and capacitors, implicit in the heat balance formulation of the finite difference method. It uses a finite element mesh, which consists of nodes and elements and is implicit in the Galerkin finite element method (GFEM). This hybrid translation method, FEM/RC, has been incorporated in Q/TRAN, a new thermal analysis computer code. This evaluation compares Q/TRAN, HEATING-6, and a research code employing GFEM on a purely mathematical, highly nonlinear steady-state conduction benchmark problem. The evaluation concludes that the FEM/RC technique has numerical characteristics that are consistent with comparable schemes for the benchmark problem. FEM/RC also accurately translates skewed meshes. Because FEM/RC generates resistors and capacitors, it appears to offer a more efficient method than the classical GFEM

Applicability of the lattice Boltzmann method to determine the ohmic resistance in equivalent resistor connections

Science.gov (United States)

Espinoza-Andaluz, Mayken; Barzola, Julio; Guarochico-Moreira, Víctor H.; Andersson, Martin

2017-12-01

Knowing the ohmic resistance in the materials allow to know in advance its electrical behavior when a potential difference is applied, and therefore the prediction of the electrical performance can be achieved in a most certain manner. Although the Lattice Boltzmann method (LBM) has been applied to solve several physical phenomena in complex geometries, it has only been used to describe the fluid phase, but applicability studies of LBM on the solid-electric-conducting material have not been carried out yet. The purpose of this paper is to demonstrate the accuracy of calculating the equivalent resistor connections using LBM. Several series and parallel resistor connections are effected. All the computations are carried out with 3D models, and the domain materials are designed by the authors.

Integration of -70kV, 22A high voltage power supply with solid state crowbar and the LHCD system of SST-1

International Nuclear Information System (INIS)

Rajan Babu, N.; Virani, C.G.; Dalakoti, S.; Sharma, P.K.; Ambulkar, K.K.; Parmar, P.R.; Thakur, A.L.; Dhorajiya, Pragnesh

2015-01-01

LHCD system is a important system for the steady state operation of the SST-1 machine. Four numbers of klystrons of 3.7 GHz are used as a microwave source to produce 2 MW of microwave power. This power is launched into the machine to achieve the steady state operation of the SST-1 Machine. A -70kV, 22A high voltage power supply and a solid-state crowbar are procured and tested and validated for its performance separately. Both of the system are integrated and tested for its integrated performance for the safe and reliable test of the klystron tube. A 10J wire test is conducted for the optimum value of the series resistor. This test will validate the integrated performance of power supply, Crowbar and the interlocking circuit. This paper details the optimization of the ballast resistor from 150 ohms to 40 ohms and its successful integration with the klystron tube for its 500kW CW operation. Some operational experience is also shared

Cosmic Ray Measurements by Scintillators with Metal Resistor Semiconductor Avalanche Photo Diodes

Science.gov (United States)

Blanco, Francesco; La Rocca, Paola; Riggi, Francesco; Akindinov, Alexandre; Mal'kevich, Dmitry

2008-01-01

An educational set-up for cosmic ray physics experiments is described. The detector is based on scintillator tiles with a readout through metal resistor semiconductor (MRS) avalanche photo diode (APD) arrays. Typical measurements of the cosmic angular distribution at sea level and a study of the East-West asymmetry obtained by such a device are…

Switching transients in a superconducting coil

International Nuclear Information System (INIS)

Owen, E.W.; Shimer, D.W.

1983-01-01

A study is made of the transients caused by the fast dump of large superconducting coils. Theoretical analysis, computer simulation, and actual measurements are used. Theoretical analysis can only be applied to the simplest of models. In the computer simulations two models are used, one in which the coil is divided into ten segments and another in which a single coil is employed. The circuit breaker that interrupts the current to the power supply, causing a fast dump, is represented by a time and current dependent conductance. Actual measurements are limited to measurements made incidental to performance tests on the MFTF Yin-yang coils. It is found that the breaker opening time is the critical factor in determining the size and shape of the transient. Instantaneous opening of the breaker causes a lightly damped transient with large amplitude voltages to ground. Increasing the opening time causes the transient to become a monopulse of decreasing amplitude. The voltages at the external terminals are determined by the parameters of the external circuit. For fast opening times the frequency depends on the dump resistor inductance, the circuit capacitance, and the amplitude on the coil current. For slower openings the dump resistor inductance and the current determine the amplitude of the voltage to ground at the terminals. Voltages to ground are less in the interior of the coil, where transients related to the parameters of the coil itself are observed

Logic delays of 5-μm resistor coupled Josephson logic

International Nuclear Information System (INIS)

Sone, J.; Yoshida, T.; Tahara, S.; Abe, H.

1982-01-01

Logic delays of resistor coupled Josephson logic (RCJL) have been investigated. An experimental circuit with a cascade chain of ten RCJL OR gates was fabricated using Pb-alloy Josephson IC technology with 5-μm minimum linewidth. Logic delay was measured to be as low as 10.8 ps with power dissipation of 11.7 μW. This demonstrates a switching operation faster than those reported for other Josephson gate designs. Comparison with computer-simulation results is also presented

Anisotropic generalization of Stinchcombe's solution for the conductivity of random resistor networks on a Bethe lattice

Science.gov (United States)

Semeriyanov, F.; Saphiannikova, M.; Heinrich, G.

2009-11-01

Our study is based on the work of Stinchcombe (1974 J. Phys. C: Solid State Phys. 7 179) and is devoted to the calculations of average conductivity of random resistor networks placed on an anisotropic Bethe lattice. The structure of the Bethe lattice is assumed to represent the normal directions of the regular lattice. We calculate the anisotropic conductivity as an expansion in powers of the inverse coordination number of the Bethe lattice. The expansion terms retained deliver an accurate approximation of the conductivity at resistor concentrations above the percolation threshold. We make a comparison of our analytical results with those of Bernasconi (1974 Phys. Rev. B 9 4575) for the regular lattice.

Anisotropic generalization of Stinchcombe's solution for the conductivity of random resistor networks on a Bethe lattice

International Nuclear Information System (INIS)

Semeriyanov, F; Saphiannikova, M; Heinrich, G

2009-01-01

Our study is based on the work of Stinchcombe (1974 J. Phys. C: Solid State Phys. 7 179) and is devoted to the calculations of average conductivity of random resistor networks placed on an anisotropic Bethe lattice. The structure of the Bethe lattice is assumed to represent the normal directions of the regular lattice. We calculate the anisotropic conductivity as an expansion in powers of the inverse coordination number of the Bethe lattice. The expansion terms retained deliver an accurate approximation of the conductivity at resistor concentrations above the percolation threshold. We make a comparison of our analytical results with those of Bernasconi (1974 Phys. Rev. B 9 4575) for the regular lattice.

Determining the mode of high voltage breakdowns in vacuum devices

International Nuclear Information System (INIS)

Miller, H.C.; Furno, E.J.; Sturtz, J.P.

1980-01-01

Devices were constructed which were essentially vacuum diodes equipped with windows allowing observation of high voltage breakdowns. The waveform of the applied voltage was photographed, and the x-ray output was monitored to investigate electrical breakdown in these vacuum diodes. Results indicate that breakdowns may be divided into two types: (1) vacuum (interelectrode) breakdown - characterized by a diffuse moderately bright discharge, a relative slow and smooth voltage collapse, and a large burst of x-rays, and (2) surface (insulator) flashover - characterized by a bright discharge with a very bright filamentary core, a relatively fast and noisy voltage collapse and no x-ray burst. Useful information concerning the type of breakdown in a vacuum device can be obtained by monitoring the voltage (current) waveform and the x-ray output

A neutral grounding metallic resistor failure in a 35 kV network

Directory of Open Access Journals (Sweden)

Simić Ninoslav

2011-01-01

Full Text Available This paper presents the results of observations and measurements of the impedance of the metal resistor for grounding neutral of the 35 kV network, before and after damaging event. The proposed measures are to be taken in order to eliminate a failure in this particular case, as well as the prevention of similar events.

Unequal Input Voltages Distribution Between the Serial Connected Halfbridges

Directory of Open Access Journals (Sweden)

Radovan Ovcarcik

2006-01-01

Full Text Available This paper describes a topology of DC-DC converter consisting in two serial connected half-bridges. Secondary circuit is realized like a conventional full-wave rectifier. The main advantage of this topology is the possibility of dividing the input voltage between the half-bridges. The converter is controlled using the phase-shift modulation, which allows a ZVSoperation mode. The voltage unbalance between the inputs causes an important problem of the presented topology. It is necessary to avoid it by the control algorithm, which is described in the text. The practical results show a zero voltage switching technique and the limits of the chosen topology and of the control.

Asymptotic expansion for the resistance between two maximally separated nodes on an M by N resistor network.

Science.gov (United States)

Izmailian, N Sh; Huang, Ming-Chang

2010-07-01

We analyze the exact formulas for the resistance between two arbitrary notes in a rectangular network of resistors under free, periodic and cylindrical boundary conditions obtained by Wu [J. Phys. A 37, 6653 (2004)]. Based on such expression, we then apply the algorithm of Ivashkevich, Izmailian, and Hu [J. Phys. A 35, 5543 (2002)] to derive the exact asymptotic expansions of the resistance between two maximally separated nodes on an M×N rectangular network of resistors with resistors r and s in the two spatial directions. Our results is 1/s (R(M×N))(r,s) = c(ρ)ln S + c(0)(ρ,ξ) + ∑(p=1)(∞) (c(2p)(ρ,ξ))/S(p) with S = MN, ρ = r/s and ξ = M/N. The all coefficients in this expansion are expressed through analytical functions. We have introduced the effective aspect ratio ξeff = square root(ρ)ξ for free and periodic boundary conditions and ξeff = square root(ρ)ξ/2 for cylindrical boundary condition and show that all finite-size correction terms are invariant under transformation ξeff→1/ξeff.

An optimized resistor pattern for temperature gradient control in microfluidics

Science.gov (United States)

Selva, Bertrand; Marchalot, Julien; Jullien, Marie-Caroline

2009-06-01

In this paper, we demonstrate the possibility of generating high-temperature gradients with a linear temperature profile when heating is provided in situ. Thanks to improved optimization algorithms, the shape of resistors, which constitute the heating source, is optimized by applying the genetic algorithm NSGA-II (acronym for the non-dominated sorting genetic algorithm) (Deb et al 2002 IEEE Trans. Evol. Comput. 6 2). Experimental validation of the linear temperature profile within the cavity is carried out using a thermally sensitive fluorophore, called Rhodamine B (Ross et al 2001 Anal. Chem. 73 4117-23, Erickson et al 2003 Lab Chip 3 141-9). The high level of agreement obtained between experimental and numerical results serves to validate the accuracy of this method for generating highly controlled temperature profiles. In the field of actuation, such a device is of potential interest since it allows for controlling bubbles or droplets moving by means of thermocapillary effects (Baroud et al 2007 Phys. Rev. E 75 046302). Digital microfluidics is a critical area in the field of microfluidics (Dreyfus et al 2003 Phys. Rev. Lett. 90 14) as well as in the so-called lab-on-a-chip technology. Through an example, the large application potential of such a technique is demonstrated, which entails handling a single bubble driven along a cavity using simple and tunable embedded resistors.

An optimized resistor pattern for temperature gradient control in microfluidics

International Nuclear Information System (INIS)

Selva, Bertrand; Marchalot, Julien; Jullien, Marie-Caroline

2009-01-01

In this paper, we demonstrate the possibility of generating high-temperature gradients with a linear temperature profile when heating is provided in situ. Thanks to improved optimization algorithms, the shape of resistors, which constitute the heating source, is optimized by applying the genetic algorithm NSGA-II (acronym for the non-dominated sorting genetic algorithm) (Deb et al 2002 IEEE Trans. Evol. Comput. 6 2). Experimental validation of the linear temperature profile within the cavity is carried out using a thermally sensitive fluorophore, called Rhodamine B (Ross et al 2001 Anal. Chem. 73 4117–23, Erickson et al 2003 Lab Chip 3 141–9). The high level of agreement obtained between experimental and numerical results serves to validate the accuracy of this method for generating highly controlled temperature profiles. In the field of actuation, such a device is of potential interest since it allows for controlling bubbles or droplets moving by means of thermocapillary effects (Baroud et al 2007 Phys. Rev. E 75 046302). Digital microfluidics is a critical area in the field of microfluidics (Dreyfus et al 2003 Phys. Rev. Lett. 90 14) as well as in the so-called lab-on-a-chip technology. Through an example, the large application potential of such a technique is demonstrated, which entails handling a single bubble driven along a cavity using simple and tunable embedded resistors

Characterization of a fully resonant, 1-MHz, 25-watt, DC/DC converter fabricated in a rad-hard BiCMOS/high-voltage process

International Nuclear Information System (INIS)

Titus, J.L.; Gehlhausen, M.A.; Desko, J.C. Jr.; Nguyen, T.T.; Roberts, D.J.; Shibib, M.A.; Hollenbach, K.E.

1995-01-01

This paper presents the characterization of a DC/DC converter prototype when its power integrated circuit (PIC) chip is exposed to total dose, dose rate, neutron, and heavy ion environments. This fully resonant, 1-MHZ, 25-Watt, DC/DC converter is composed of a brassboard, populated with input/output filters, isolation transformers, output rectifier, capacitors, resistors, and PIC chip, integrating the primary-side control circuitry, secondary-side control circuitry, power switch, gate-drive circuitry, and voltage references. The brassboard is built using commercial off-the-shelf components; and the PIC chip is fabricated using AT and T's rad-hard, bipolar complementary metal-oxide semiconductor (BiCMOS)/high-voltage process. The intent of this paper is to demonstrate that the PIC chip is fabricated with a radiation-hardened process and to demonstrate that various analog, digital, and power functions can be effectively integrated

Rotor Field Oriented Control with adaptive Iron Loss Compensation

DEFF Research Database (Denmark)

Rasmussen, Henrik; Vadstrup, P.; Børsting, H.

1999-01-01

of the motor referenced to the rotor magnetizing current, and with the extension of an iron loss resistor added in parallel to the magnetizing inductance. The resistor estimator is based on the observation that the actual applied stator voltages deviates from the voltage estimated, when a motor is current......It is well known from the literature that iron loses in an induction motor implies field angle estimation errors and hence detuning problems. In this paper a new method for estimating the iron loss resistor in an induction motor is presented. The method is based on a traditional dynamic model...

Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

Science.gov (United States)

Brown, G. A.; Harrap, V.

1971-01-01

Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

A new method of removing the high value feedback resistor in the charge sensitive preamplifier

International Nuclear Information System (INIS)

Xi Deming

1993-01-01

A new method of removing the high value feedback resistor in the charge sensitive preamplifier is introduced. The circuit analysis of this novel design is described and the measured performances of a practical circuit are provided

Power saving regulated light emitting diode circuit

International Nuclear Information System (INIS)

Haville, G. D.

1985-01-01

A power saving regulated light source circuit, comprising a light emitting diode (LED), a direct current source and a switching transistor connected in series with the LED, a control voltage producing resistor connected in series with the LED to produce a control voltage corresponding to the current through the LED, a storage capacitor connected in parallel with the series combination of the LED and the resistor, a comparator having its output connected to the input of the transistor, the comparator having a reference input and a control input, a stabilized biasing source for supplying a stabilized reference voltage to the reference input, the control input of the comparator being connected to the control voltage producing resistor, the comparator having a high output state when the reference voltage exceeds the control voltage while having a low output state when the control voltage exceeds the reference voltage, the transistor being conductive in response to the high state while being nonconductive in response to the low state, the transistor when conductive being effective to charge the capacitor and to increase the control voltage, whereby the comparator is cycled between the high and low output states while the transistor is cycled between conductive and nonconductive states

Hand-Drawn Resistors and a Simple Tester Using a Light-Emitting Diode

Science.gov (United States)

Kamata, Masahiro; Abe, Mayumi

2012-01-01

A thick line drawn on a sheet of paper with a 6B pencil is electrically conductive and its resistance can be roughly estimated using a simple tester made of a light-emitting diode (LED) and a lithium coin-type cell. Using this hand-drawn resistor and the LED tester, we developed teaching materials that help students to understand how electrical…

The noise analysis and optimum filtering techniques for a two-dimensional position sensitive orthogonal strip gamma ray detector employing resistive charge division

International Nuclear Information System (INIS)

Gerber, M.S.; Muller, D.W.

1976-01-01

The analysis of an orthogonal strip, two-dimensional position sensitive high purity germanium gamma ray detector is discussed. Position sensitivity is obtained by connecting each electrode strip on the detector to a resistor network. Charge, entering the network, divides in relation to the resistance between its entry point and the virtual earth points of the charge sensitive preamplifiers located at the end of each resistor network. The difference of the voltage pulses at the output of each preamplifier is proportional to the position at which the charge entered the resistor network and the sum of the pulse is proportional to the energy of the detected gamma ray. The analysis and spatial noise resolution is presented for this type of position sensitive detector. The results of the analysis show that the position resolution is proportional to the square root of the filter amplifier's output pulse time constant and that for energy measurement the resolution is maximized at the filter amplifier's noise corner time constant. The design of the electronic noise filtering system for the prototype gamma ray camera was based on the mathematical energy and spatial resolution equations. For the spatial channel a Gaussian trapezoidal filtering system was developed. Gaussian filtering was used for the energy channel. The detector noise model was verified by taking rms noise measurements of the filtered energy and spatial pulses from resistive readout charge dividing detectors. These measurements were within 10% of theory. (Auth.)

Improved Passive-Damped LCL Filter to Enhance Stability in Grid-Connected Voltage-Source Converters

DEFF Research Database (Denmark)

Beres, Remus Narcis; Wang, Xiongfei; Blaabjerg, Frede

2015-01-01

This paper proposes an improved passive-damped LCL filter to be used as interface between the grid-connected voltage-source converters and the utility grid. The proposed filter replaces the LCL filter capacitor with a traditional C-type filter with the resonant circuit tuned in such a way...... passive-damped LCL filter. To verify the benefits of the proposed filter, a comparison with the conventional filter is made in terms of losses and ratings when both the filters are designed under the same condition....... that switching harmonics due to pulse width modulation are to be cancelled. Since the tuned circuit of the C-type filter suppresses the switching harmonics more effectively, the total inductance of the filter can be reduced. Additionally, the rating of the damping resistor is lower, compared with conventional...

4-bit digital to analog converter using R-2R ladder and binary weighted resistors

Science.gov (United States)

Diosanto, J.; Batac, M. L.; Pereda, K. J.; Caldo, R.

2017-06-01

The use of a 4-bit digital-to-analog converter using two methods; Binary Weighted Resistors and R-2R Ladder is designed and presented in this paper. The main components that were used in constructing both circuits were different resistor values, operational amplifier (LM741) and single pole double throw switches. Both circuits were designed using MULTISIM software to be able to test the circuit for its ideal application and FRITZING software for the layout designing and fabrication to the printed circuit board. The implementation of both systems in an actual circuit benefits in determining and comparing the advantages and disadvantages of each. It was realized that the binary weighted circuit is more efficient DAC, having lower percentage error of 0.267% compared to R-2R ladder circuit which has a minimum of percentage error of 4.16%.

Disulfide mapping the voltage-sensing mechanism of a voltage-dependent potassium channel.

Science.gov (United States)

Nozaki, Tomohiro; Ozawa, Shin-Ichiro; Harada, Hitomi; Kimura, Tomomi; Osawa, Masanori; Shimada, Ichio

2016-11-17

Voltage-dependent potassium (Kv) channels allow for the selective permeability of potassium ions in a membrane potential dependent manner, playing crucial roles in neurotransmission and muscle contraction. Kv channel is a tetramer, in which each subunit possesses a voltage-sensing domain (VSD) and a pore domain (PD). Although several lines of evidence indicated that membrane depolarization is sensed as the movement of helix S4 of the VSD, the detailed voltage-sensing mechanism remained elusive, due to the difficulty of structural analyses at resting potential. In this study, we conducted a comprehensive disulfide locking analysis of the VSD using 36 double Cys mutants, in order to identify the proximal residue pairs of the VSD in the presence or absence of a membrane potential. An intramolecular SS-bond was formed between 6 Cys pairs under both polarized and depolarized environment, and one pair only under depolarized environment. The multiple conformations captured by the SS-bond can be divided by two states, up and down, where S4 lies on the extracellular and intracellular sides of the membrane, respectively, with axial rotation of 180°. The transition between these two states is caused by the S4 translocation of 12 Å, enabling allosteric regulation of the gating at the PD.

Implantable bladder volume sensor based on resistor ladder network composed of conductive hydrogel composite.

Science.gov (United States)

Mi Kyung Kim; Hyojung Kim; Jung, Yeon Su; Adem, Kenana M A; Bawazir, Sarah S; Stefanini, Cesare; Lee, Hyunjoo J

2017-07-01

An accurate bladder volume monitoring system is a critical component in diagnosis and treatment of urological disorders. Here, we report an implantable bladder volume sensor with a multi-level resistor ladder which estimates the bladder volume through discrete resistance values. Discretization allows the sensor output to be resilient to the long-term drift, hysteresis, and degradation of the sensor materials. Our sensor is composed of biocompatible polypyrrole/agarose hydrogel composite. Because Young's modulus of this composite is comparable to that of the bladder wall, the effect of mechanical loading of the sensor on the bladder movement is minimized which allows more accurate volume monitoring. We also demonstrate the patterning and molding capability of this material by fabrication various structures. Lastly, we successfully demonstrate the functionality of the multi-level resistor ladder sensor as a bladder volume sensor by attaching the sensor on the pig's bladder and observing the impedance change of the sensor.

Adjustable electronic load-alarm relay

International Nuclear Information System (INIS)

Mason, C.H.; Sitton, R.S.

1976-01-01

An improved electronic alarm relay for monitoring the current drawn by an ac motor or other electrical load is described. The circuit is designed to measure the load with high accuracy and to have excellent alarm repeatability. Chattering and arcing of the relay contacts are minimal. The operator can adjust the set point easily and can re-set both the high and the low alarm points by means of one simple adjustment. The relay includes means for generating a signal voltage proportional to the motor current. In a preferred form of the invention a first operational amplifier is provided to generate a first constant reference voltage which is higher than a preselected value of the signal voltage. A second operational amplifier is provided to generate a second constant reference voltage which is lower than the aforementioned preselected value of the signal voltage. A circuit comprising a first resistor serially connected to a second resistor is connected across the outputs of the first and second amplifiers, and the junction of the two resistors is connected to the inverting terminal of the second amplifier. Means are provided to compare the aforementioned signal voltage with both the first and second reference voltages and to actuate an alarm if the signal voltage is higher than the first reference voltage or lower than the second reference voltage

Novel design of high voltage pulse source for efficient dielectric barrier discharge generation by using silicon diodes for alternating current

Science.gov (United States)

Truong, Hoa Thi; Hayashi, Misaki; Uesugi, Yoshihiko; Tanaka, Yasunori; Ishijima, Tatsuo

2017-06-01

This work focuses on design, construction, and optimization of configuration of a novel high voltage pulse power source for large-scale dielectric barrier discharge (DBD) generation. The pulses were generated by using the high-speed switching characteristic of an inexpensive device called silicon diodes for alternating current and the self-terminated characteristic of DBD. The operation started to be powered by a primary DC low voltage power supply flexibly equipped with a commercial DC power supply, or a battery, or DC output of an independent photovoltaic system without transformer employment. This flexible connection to different types of primary power supply could provide a promising solution for the application of DBD, especially in the area without power grid connection. The simple modular structure, non-control requirement, transformer elimination, and a minimum number of levels in voltage conversion could lead to a reduction in size, weight, simple maintenance, low cost of installation, and high scalability of a DBD generator. The performance of this pulse source has been validated by a load of resistor. A good agreement between theoretically estimated and experimentally measured responses has been achieved. The pulse source has also been successfully applied for an efficient DBD plasma generation.

Effects of varying laser trimming geometries on thin film\\ud resistors

OpenAIRE

Alafogianni, Maria; Birkett, Martin; Penlington, Roger

2017-01-01

Purpose - This paper studies the effects of varying laser trim patterns on several performance parameters of thin film resistors such as the temperature coefficient of resistance (TCR) and target resistance value.\\ud \\ud Design/methodology/approach - The benefits and limitations of basic trim patterns are taken into consideration and the plunge cut, double plunge cut and the curved L-cut were selected to be modelled and tested experimentally. A computer simulation of the laser trim patterns h...

Dissipation, Voltage Profile and Levy Dragon in a Special Ladder Network

Science.gov (United States)

Ucak, C.

2009-01-01

A ladder network constructed by an elementary two-terminal network consisting of a parallel resistor-inductor block in series with a parallel resistor-capacitor block sometimes is said to have a non-dispersive dissipative response. This special ladder network is created iteratively by replacing the elementary two-terminal network in place of the…

Electromagnetic Component Research

Science.gov (United States)

2009-12-01

19 15: (a) 94 GHz Antenna Feeds Suspended Resistor (b) Thermopile Test Structure (c) Thermopile DC Voltage-Power Response...EMTs by implementing a fully coupled electro-mechanical formulation based upon the piezoe lectric constitutive equations for stress and electric... resistor , thermally isolated from the underlying substrate by micromachining. Energy received by the antenna is dissipated in the resistor causing the

The Transition from Traditional to Whole Language Instruction: A Continuum from Reformers to Resistors.

Science.gov (United States)

Schweiker, Karyn E.; Barksdale-Ladd, Mary Alice

Factors that influenced teachers to become reformers, reviewers, or resistors to whole language were investigated with specific examination of school culture. In this study three transitioning school sites were selected on the basis of their similarity in staffing and student size. Participants from each school involved three to four classroom…

Theory and experiment on charging and discharging a capacitor through a reverse-biased diode

Science.gov (United States)

Roy, Arijit; Mallick, Abhishek; Adhikari, Aparna; Guin, Priyanka; Chatterjee, Dibyendu

2018-06-01

The beauty of a diode lies in its voltage-dependent nonlinear resistance. The voltage on a charging and discharging capacitor through a reverse-biased diode is calculated from basic equations and is found to be in good agreement with experimental measurements. Instead of the exponential dependence of charging and discharging voltages with time for a resistor-capacitor circuit, a linear time dependence is found when the resistor is replaced by a reverse-biased diode. Thus, well controlled positive and negative ramp voltages are obtained from the charging and discharging diode-capacitor circuits. This experiment can readily be performed in an introductory physics and electronics laboratory.

Measurement Error Estimation for Capacitive Voltage Transformer by Insulation Parameters

Directory of Open Access Journals (Sweden)

Bin Chen

2017-03-01

Full Text Available Measurement errors of a capacitive voltage transformer (CVT are relevant to its equivalent parameters for which its capacitive divider contributes the most. In daily operation, dielectric aging, moisture, dielectric breakdown, etc., it will exert mixing effects on a capacitive divider’s insulation characteristics, leading to fluctuation in equivalent parameters which result in the measurement error. This paper proposes an equivalent circuit model to represent a CVT which incorporates insulation characteristics of a capacitive divider. After software simulation and laboratory experiments, the relationship between measurement errors and insulation parameters is obtained. It indicates that variation of insulation parameters in a CVT will cause a reasonable measurement error. From field tests and calculation, equivalent capacitance mainly affects magnitude error, while dielectric loss mainly affects phase error. As capacitance changes 0.2%, magnitude error can reach −0.2%. As dielectric loss factor changes 0.2%, phase error can reach 5′. An increase of equivalent capacitance and dielectric loss factor in the high-voltage capacitor will cause a positive real power measurement error. An increase of equivalent capacitance and dielectric loss factor in the low-voltage capacitor will cause a negative real power measurement error.

Performance of a 2-megawatt high voltage test load

International Nuclear Information System (INIS)

Horan, D.; Kustom, R.; Ferguson, M.

1995-01-01

A high-power, water-cooled resistive load which simulates the electrical load characteristics of a high-power klystron, capable of 2 megawatts dissipation at 95 kV DC, was built and installed at the Advanced Photon Source for use in load-testing high voltage power supplies. During this testing, the test load has logged approximately 35 hours of operation at power levels in excess of one mezawatt. Slight variations in the resistance of the load during operation indicate that leakage currents in the cooling water may be a significant factor affecting the performance of the load. Sufficient performance data have been collected to indicate that leakage current through the deionized (DI) water coolant shunts roughly 15 percent of the full-load current around the load resistor elements. The leakage current could cause deterioration of internal components of the load. The load pressure vessel was disassembled and inspected internally for any signs of significant wear and distress. Results of this inspection and possible modifications for improved performance will be discussed

Solar Energy Measurement Using Arduino

Directory of Open Access Journals (Sweden)

Jumaat Siti Amely

2018-01-01

Full Text Available This project aims to develop a measurement of solar energy using Arduino Board technology. In this research, four parameters that been measured are temperature, light intensity, voltage and current. The temperature was measured using temperature sensor. The light intensity was measured using light dependent resistor (LDR sensor. The voltage was measured using the voltage divider because the voltage generated by the solar panel are large for the Arduino as receiver. Lastly for the current was measured using the current sensor module that can sense the current generated by the solar panel. These parameters as the input value for the Arduino and the output was display at the Liquid Crystal Display (LCD screen. The LCD screen display output of the temperature, the light intensity, the voltage and the current value. The purpose of Arduino to convert the analog input of parameter to the digital output and display via LCD screen. Other than that, this project also involve with a design to ensure that device case are easy to be carry around.

Electrical properties of thick-layer piezo resistors based on Bi2Ru2O7

International Nuclear Information System (INIS)

Golonka, L.; Tankiewicz, S.

1997-01-01

Piezoelectric effect and electrical properties of thick-layer resistors based on Bi 2 Ru 2 O 7 (on ceramic substrate) have been studied. The influence of selected technological parameters (sintering temperature, chemical composition, heat treatment) on system properties has been estimated. 4 refs, 7 figs

A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances

NARCIS (Netherlands)

Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2008-01-01

The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?c) have been extensively discussed during last few decades and the minimum of the �?c value, which could be accurately extracted, was

Anisotropic generalization of Stinchcombe's solution for the conductivity of random resistor networks on a Bethe lattice

Energy Technology Data Exchange (ETDEWEB)

Semeriyanov, F; Saphiannikova, M; Heinrich, G [Leibniz Institute of Polymer Research Dresden, Hohe str. 6, 01069 Dresden (Germany)], E-mail: fsemeriyanov@yahoo.de

2009-11-20

Our study is based on the work of Stinchcombe (1974 J. Phys. C: Solid State Phys. 7 179) and is devoted to the calculations of average conductivity of random resistor networks placed on an anisotropic Bethe lattice. The structure of the Bethe lattice is assumed to represent the normal directions of the regular lattice. We calculate the anisotropic conductivity as an expansion in powers of the inverse coordination number of the Bethe lattice. The expansion terms retained deliver an accurate approximation of the conductivity at resistor concentrations above the percolation threshold. We make a comparison of our analytical results with those of Bernasconi (1974 Phys. Rev. B 9 4575) for the regular lattice.

An optical fiber Bragg grating and piezoelectric ceramic voltage sensor

Science.gov (United States)

Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

2017-10-01

Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

An optical fiber Bragg grating and piezoelectric ceramic voltage sensor.

Science.gov (United States)

Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui

2017-10-01

Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

Ultrathin microwave metamaterial absorber utilizing embedded resistors

Science.gov (United States)

Kim, Young Ju; Hwang, Ji Sub; Yoo, Young Joon; Khuyen, Bui Xuan; Rhee, Joo Yull; Chen, Xianfeng; Lee, YoungPak

2017-10-01

We numerically and experimentally studied an ultrathin and broadband perfect absorber by enhancing the bandwidth with embedded resistors into the metamaterial structure, which is easy to fabricate in order to lower the Q-factor and by using multiple resonances with the patches of different sizes. We analyze the absorption mechanism in terms of the impedance matching with the free space and through the distribution of surface current at each resonance frequency. The magnetic field, induced by the antiparallel surface currents, is formed strongly in the direction opposite to the incident electromagnetic wave, to cancel the incident wave, leading to the perfect absorption. The corresponding experimental absorption was found to be higher than 97% in 0.88-3.15 GHz. The agreement between measurement and simulation was good. The aspects of our proposed structure can be applied to future electronic devices, for example, advanced noise-suppression sheets in the microwave regime.

Current flow in random resistor networks: the role of percolation in weak and strong disorder.

Science.gov (United States)

Wu, Zhenhua; López, Eduardo; Buldyrev, Sergey V; Braunstein, Lidia A; Havlin, Shlomo; Stanley, H Eugene

2005-04-01

We study the current flow paths between two edges in a random resistor network on a L X L square lattice. Each resistor has resistance e(ax) , where x is a uniformly distributed random variable and a controls the broadness of the distribution. We find that: (a) The scaled variable u identical with u congruent to L/a(nu) , where nu is the percolation connectedness exponent, fully determines the distribution of the current path length l for all values of u . For u > 1, the behavior corresponds to the weak disorder limit and l scales as l approximately L, while for u < 1 , the behavior corresponds to the strong disorder limit with l approximately L(d(opt) ), where d(opt) =1.22+/-0.01 is the optimal path exponent. (b) In the weak disorder regime, there is a length scale xi approximately a(nu), below which strong disorder and critical percolation characterize the current path.

Module Five: Relationships of Current, Voltage, and Resistance; Basic Electricity and Electronics Individualized Learning System.

Science.gov (United States)

Bureau of Naval Personnel, Washington, DC.

This module covers the relationships between current and voltage; resistance in a series circuit; how to determine the values of current, voltage, resistance, and power in resistive series circuits; the effects of source internal resistance; and an introduction to the troubleshooting of series circuits. This module is divided into five lessons:…

"Weak quantum chaos" and its resistor network modeling.

Science.gov (United States)

Stotland, Alexander; Pecora, Louis M; Cohen, Doron

2011-06-01

Weakly chaotic or weakly interacting systems have a wide regime where the common random matrix theory modeling does not apply. As an example we consider cold atoms in a nearly integrable optical billiard with a displaceable wall (piston). The motion is completely chaotic but with a small Lyapunov exponent. The Hamiltonian matrix does not look like one taken from a Gaussian ensemble, but rather it is very sparse and textured. This can be characterized by parameters s and g which reflect the percentage of large elements and their connectivity, respectively. For g we use a resistor network calculation that has a direct relation to the semilinear response characteristics of the system, hence leading to a prediction regarding the energy absorption rate of cold atoms in optical billiards with vibrating walls.

Resistor-less charge sensitive amplifier for semiconductor detectors

Energy Technology Data Exchange (ETDEWEB)

Pelczar, K., E-mail: krzysztof.pelczar@doctoral.uj.edu.pl; Panas, K.; Zuzel, G.

2016-11-01

A new concept of a Charge Sensitive Amplifier without a high-value resistor in the feedback loop is presented. Basic spectroscopic parameters of the amplifier coupled to a coaxial High Purity Germanium detector (HPGe) are discussed. The amplifier signal input is realized with an n-channel J-FET transistor. The feedback capacitor is discharged continuously by the second, forward biased n-channel J-FET, driven by an RC low–pass filter. Both the analog—with a standard spectroscopy amplifier and a multi-channel analyzer—and the digital—by applying a Flash Analog to Digital Converter—signal readouts were tested. The achieved resolution in the analog and the digital readouts was 0.17% and 0.21%, respectively, at the Full Width at Half Maximum of the registered {sup 60}Co 1332.5 keV gamma line.

Study on the characteristics of hysteresis loop and resistance of glow discharge plasma using argon gas

Science.gov (United States)

Mathew, Prijil; Sajith Mathews, T.; Kurian, P. J.; Chattopadyay, P. K.

2018-05-01

Hysteresis in discharge current is produced in a low-pressure, magnetic field free, Glow discharge plasma by varying discharge voltage. The variation in area of the hysteresis loops with pressure, electrode distance and load resistor studied. To understand, the nonlinear behaviour of the I-V characteristics, the changes in gas resistance with electrode voltage, pressure and load resistor were studied. After many trials we propose the best suitable empirical equation for the exponential decrease of the gas resistance with electrode voltage as; R = Rmin + Ae-0.008V, which is a novel one and matches well with our experimental results.

Investigation on powder metallurgy Cr-Si-Ta-Al alloy target for high-resistance thin film resistors with low temperature coefficient of resistance

International Nuclear Information System (INIS)

Wang, X.Y.; Zhang, Z.S.; Bai, T.

2010-01-01

The sputtering target for high-resistance thin film resistors plays a decisive role in temperature coefficient of resistance (TCR). Silicon-rich chromium (Cr)-silicon (Si) target was designed and smelted for high-resistance thin film resistors with low TCR. Valve metal tantalum (Ta) and aluminum (Al) were introduced to the Cr-Si target to improve the performance of the target prepared. The measures for grain refining in smelting Cr-Si-Ta-Al target were taken to improve the performance of the prepared target. The mechanism and role of grain refinement were discussed in the paper. The phase structure of the prepared target was detected by X-ray diffraction (XRD). Rate of temperature drop was studied to reduce the internal stress of alloy target and conquer the easy cracking disadvantage of silicon-rich target. The electrical properties of sputtered thin film resistors were tested to evaluate the performance of the prepared target indirectly.

Energy extraction system using dual-capacitor switching for quench protection of HTS magnet

Energy Technology Data Exchange (ETDEWEB)

Chi, Yo Jong; Song, Seung Hyun; Jeon, Hae Ryong; Ko, Tae Kuk [Yonsei University, Seoul (Korea, Republic of); Lee, Woo Seung [JH ENGINEERING CO., LTD., Anyang (Korea, Republic of); Kang, Hyoung Ku [Korea National University of Transportation, Chungju (Korea, Republic of)

2017-09-15

The superconducting magnets have a large inductance as well as high operating current. Therefore, mega-joule scale energy can be stored in the magnet. The energy stored in the magnet is sufficient to damage the magnet when a quench occurs. Quench heater and dump resistor can be used to protect the magnet. However, using quench heater to create quench resistors through heat transfer can be slower than instantly switching resistors. Also, electrical short, overheating and breakdown can occur due to quench heater. Moreover, the number of dump resistor should be limited to avoid large terminal voltage. Therefore, in this paper, we propose a quench protection method for extracting the energy stored in a magnet by charging and discharging energy through a capacitor switching without increasing resistance. The simulation results show that the proposed system has a faster current decay within the allowable voltage level.

Energy extraction system using dual-capacitor switching for quench protection of HTS magnet

International Nuclear Information System (INIS)

Chi, Yo Jong; Song, Seung Hyun; Jeon, Hae Ryong; Ko, Tae Kuk; Lee, Woo Seung; Kang, Hyoung Ku

2017-01-01

The superconducting magnets have a large inductance as well as high operating current. Therefore, mega-joule scale energy can be stored in the magnet. The energy stored in the magnet is sufficient to damage the magnet when a quench occurs. Quench heater and dump resistor can be used to protect the magnet. However, using quench heater to create quench resistors through heat transfer can be slower than instantly switching resistors. Also, electrical short, overheating and breakdown can occur due to quench heater. Moreover, the number of dump resistor should be limited to avoid large terminal voltage. Therefore, in this paper, we propose a quench protection method for extracting the energy stored in a magnet by charging and discharging energy through a capacitor switching without increasing resistance. The simulation results show that the proposed system has a faster current decay within the allowable voltage level

Update for nurse anesthetists. The Starling resistor: a model for explaining and treating obstructive sleep apnea.

Science.gov (United States)

Stalford, Catherine B

2004-04-01

Recent epidemiological research places the incidence of obstructive sleep apnea as high as 16% in the general population. Serious postoperative respiratory complications and death have been reported in this population. Anesthetic drugs contribute to these complications secondary to acute and residual influences on the complex orchestration of airway muscles and reflexes involved in airway patency. The Starling resistor model is a theoretical model that has application in explaining upper airway dynamics and the treatment and management of obstructive sleep apnea. The model postulates the oropharynx as a collapsible tube. The oropharynx remains open or partially or completely closed as a result of pressure upstream at the nose and mouth, pressure downstream at the trachea and below, or tissue pressure surrounding the oropharynx. This AANA Journal course provides an overview of the Starling resistor model, its application to obstructive sleep apnea, and preoperative and postoperative anesthetic considerations.

The role of feedback resistors and tid effects in the ASET response of a high speed current feedback amplifier

International Nuclear Information System (INIS)

Roig, F.; Dusseau, L.; Privat, A.; Vaille, J.R.; Boch, J.; Saigne, F.; Ribeiro, P.; Auriel, G.; Roche, N.J.H.; Marec, R.; Calvel, P.; Bezerra, F.; Ecoffet, R.; Azais, B.

2014-01-01

The influence of external circuit designs on ASET shapes in a high speed current feedback amplifier (CFA) (AD844) is investigated by means of the pulsed laser single event effect (PLSEE) simulation technique. Changes of the feedback resistors modify circuit's electrical parameters such as closed-loop gain and bandwidth, affecting amplifier stability and so ASET shapes. Qualitative explanations based on general electronic rules and feedback theories enable the understanding of a CFA operation establishing a correlation between the evolution of external feedback resistor values and ASET parameters. TID effects on the ASET sensitivity in AD844 CFA are also investigated in this work highlighting different behaviors according to the impacted bipolar transistor in the integrated circuit. (authors)

Temperature measuring device

International Nuclear Information System (INIS)

Brixy, H.

1977-01-01

The temperature measuring device is equipped with an electric resistor installed within a metal shroud tube so as to be insulated from it, the noise voltage of which resistor is fed to a measuring unit. The measuring junctions of one or two thermocouples are connected with the electric resistor and the legs of one or both thermocouples can be connected to the measuring unit by means of a switch. (orig.) [de

Array of Chemosensitive Resistors with Composites of Gas Chromatography (GC) Materials and Carbon Black for Detection and Recognition of VOCs: A Basic Study

Science.gov (United States)

Wyszynski, Bartosz; Yatabe, Rui; Nakao, Atsuo; Nakatani, Masaya; Oki, Akio; Oka, Hiroaki; Toko, Kiyoshi

2017-01-01

Mimicking the biological olfaction, large odor-sensor arrays can be used to acquire a broad range of chemical information, with a potentially high degree of redundancy, to allow for enhanced control over the sensitivity and selectivity of artificial olfaction systems. The arrays should consist of the largest possible number of individual sensing elements while being miniaturized. Chemosensitive resistors are one of the sensing platforms that have a potential to satisfy these two conditions. In this work we test viability of fabricating a 16-element chemosensitive resistor array for detection and recognition of volatile organic compounds (VOCs). The sensors were fabricated using blends of carbon black and gas chromatography (GC) stationary-phase materials preselected based on their sorption properties. Blends of the selected GC materials with carbon black particles were subsequently coated over chemosensitive resistor devices and the resulting sensors/arrays evaluated in exposure experiments against vapors of pyrrole, benzenal, nonanal, and 2-phenethylamine at 150, 300, 450, and 900 ppb. Responses of the fabricated 16-element array were stable and differed for each individual odorant sample, proving the blends of GC materials with carbon black particles can be effectively used for fabrication of large odor-sensing arrays based on chemosensitive resistors. The obtained results suggest that the proposed sensing devices could be effective in discriminating odor/vapor samples at the sub-ppm level. PMID:28696353

Microstructure and electrical properties of slug-type resistors based on B4C and TiC - ESCA - XPS and impedance spectroscopy investigations

International Nuclear Information System (INIS)

Klimiec, E.; Zaraska, W.; Stobiecki, T.; Bak, W.; Starzyk, F.

2000-01-01

The microstructure and electrical properties of slug-type resistors based on B 4 C and TiC were investigated. From XPS measurements was deducted that Ti in TiO 2 is in intermediate oxidation number between Ti +4 and Ti +3 . The impedance of both type of resistors is independent on frequency in the range from 10 3 to 10 4 Hz, only very subtle differences above 10 4 Hz are observed. The metallic type conductivity in TiC and semiconducting in B 4 C was established. (author)

Transition Delay in a Hypervelocity Boundary Layer using Nonequilibrium CO2 Injection

Science.gov (United States)

2008-10-28

which is more than the voltage necessary to trigger the timing circuit. A large (1MΩ) resistor , R3, was placed to draw down the voltage once the...pulse ended, otherwise the op amp would continue to output the amplified TTL pulse until the power supply was switched off. This resistor can be seen in...Data files from the new DAS are transferred to the GALCIT server and copied to this folder. Two PCB piezo -electric pressure transducers mounted at

Cross-Bridge Kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization

NARCIS (Netherlands)

Stavitski, N.; Klootwijk, J.H.; van Zeijl, H.W.; Kovalgin, Alexeij Y.; Wolters, Robertus A.M.

2009-01-01

The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (�?�c) have been extensively discussed during last few decades and the minimum of the �?�c value, which could be accurately extracted, was

Design Of Load-klystron Equivalent For Jlc

CERN Document Server

Grishanov, B I

2004-01-01

In this paper a design of a resistive load - an equivalent of a klystron for the Japan Linear Collider JLC is described. The load should operate in a pulse mode at high voltage and high averege power. Different design variants were considered. The choice in favour of ceramic bulk resistor with longitudinal conductivity was done. A caloric and hydraulic calculation was executed. A mesurements of ceramics thermal conductivity of the bulk resistor and of a single radiator produced warmth remooval were done. Unfortunataly the last events on JLC forbad us to realys the project "in metall". But authours houp that this design experience could be usefull for another accelerating centers. The load can find an application as a absorbing resistor in high voltage schemes.

High voltage generator circuit with low power and high efficiency applied in EEPROM

International Nuclear Information System (INIS)

Liu Yan; Zhang Shilin; Zhao Yiqiang

2012-01-01

This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory (EEPROM). The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique. The high efficiency is dependent on the zero threshold voltage (V th ) MOSFET and the charge transfer switch (CTS) charge pump. The proposed high voltage generator circuit has been implemented in a 0.35 μm EEPROM CMOS process. Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48 μW and a higher pumping efficiency (83.3%) than previously reported circuits. This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation. (semiconductor integrated circuits)

Timing divided attention.

Science.gov (United States)

Hogendoorn, Hinze; Carlson, Thomas A; VanRullen, Rufin; Verstraten, Frans A J

2010-11-01

Visual attention can be divided over multiple objects or locations. However, there is no single theoretical framework within which the effects of dividing attention can be interpreted. In order to develop such a model, here we manipulated the stage of visual processing at which attention was divided, while simultaneously probing the costs of dividing attention on two dimensions. We show that dividing attention incurs dissociable time and precision costs, which depend on whether attention is divided during monitoring or during access. Dividing attention during monitoring resulted in progressively delayed access to attended locations as additional locations were monitored, as well as a one-off precision cost. When dividing attention during access, time costs were systematically lower at one of the accessed locations than at the other, indicating that divided attention during access, in fact, involves rapid sequential allocation of undivided attention. We propose a model in which divided attention is understood as the simultaneous parallel preparation and subsequent sequential execution of multiple shifts of undivided attention. This interpretation has the potential to bring together diverse findings from both the divided-attention and saccade preparation literature and provides a framework within which to integrate the broad spectrum of divided-attention methodologies.

Carbon resistor pressure gauge calibration at low stresses

International Nuclear Information System (INIS)

Cunningham, Bruce; Vandersall, Kevin S.; Niles, Angela M.; Greenwood, Daniel W.; Garcia, Frank; Forbes, Jerry W.; Wilson, William H.

2002-01-01

The 470 Ohm carbon resistor gauge has been used in the stress range up to 4-5 GPa for highly heterogeneous materials and/or divergent flow experiments. The attractiveness of the gauge is its rugged nature, simple construction, low cost, reproducibility, and survivability in dynamic events. Gauge drawbacks are the long time response to pressure equilibration and gauge resistance hysteresis. In the regime below 0.4 GPa, gauge calibration has been extrapolated. Because of the need for calibration data within this low stress regime, calibration experiments were performed using a split-Hopkinson bar, drop tower apparatus, and gas pressure chamber. Since the performance of the gauge at elevated temperatures is a concern, the change in resistance due to heating at atmospheric pressure was also investigated. Details of the various calibration arrangements and the results are discussed and compared to a calibration curve fit to previously published calibration data

A novel charge sensitive preamplifier without the feedback resistor

International Nuclear Information System (INIS)

Bertuccio, G.

1992-01-01

A novel charge sensitive preamplifier which has no resistor in parallel with the feedback capacitor is presented. No external device or circuit is required to discharge the feedback capacitor. The detector leakage and signal current flows away through the gate of the first JFET which works with its gate to source junction slightly forward biased. The DC stabilization of the preamplifier is accomplished by an additional feedback loop, which permits to equalize the current flowing through the forward baised gate to source junction and the current coming from the detector. An equivalent noise charge of less than 20 electrons r.m.s. has been measured at room temperature by using an input JFET with a transconductance to gate capacitance ratio of 4 mS/5.4 pF

Ultrahigh impedance method to assess electrostatic accelerator performance

Directory of Open Access Journals (Sweden)

Nikolai R. Lobanov

2015-06-01

Full Text Available This paper describes an investigation of problem-solving procedures to troubleshoot electrostatic accelerators. A novel technique to diagnose issues with high-voltage components is described. The main application of this technique is noninvasive testing of electrostatic accelerator high-voltage grading systems, measuring insulation resistance, or determining the volume and surface resistivity of insulation materials used in column posts and acceleration tubes. In addition, this technique allows verification of the continuity of the resistive divider assembly as a complete circuit, revealing if an electrical path exists between equipotential rings, resistors, tube electrodes, and column post-to-tube conductors. It is capable of identifying and locating a “microbreak” in a resistor and the experimental validation of the transfer function of the high impedance energy control element. A simple and practical fault-finding procedure has been developed based on fundamental principles. The experimental distributions of relative resistance deviations (ΔR/R for both accelerating tubes and posts were collected during five scheduled accelerator maintenance tank openings during 2013 and 2014. Components with measured ΔR/R>±2.5% were considered faulty and put through a detailed examination, with faults categorized. In total, thirty four unique fault categories were identified and most would not be identifiable without the new technique described. The most common failure mode was permanent and irreversible insulator current leakage that developed after being exposed to the ambient environment. As a result of efficient in situ troubleshooting and fault-elimination techniques, the maximum values of |ΔR/R| are kept below 2.5% at the conclusion of maintenance procedures. The acceptance margin could be narrowed even further by a factor of 2.5 by increasing the test voltage from 40 V up to 100 V. Based on experience over the last two years, resistor and

Determination of packaging induced 3D stress utilizing a piezocoefficient mapping device

DEFF Research Database (Denmark)

Richter, Jacob; Hyldgård, A.; Birkelund, Karen

2007-01-01

piezoresistor by contacts located near the perimeter of the resistor and do high impedance voltage measurements on contacts located near the centre of the resistor. By measuring the potential drops in these contacts we can determine the stress in the chip. The epoxy is potted in a polystyrene tube using...

Heat-pump performance: voltage dip/sag, under-voltage and over-voltage

Directory of Open Access Journals (Sweden)

William J.B. Heffernan

2014-12-01

Full Text Available Reverse cycle air-source heat-pumps are an increasingly significant load in New Zealand and in many other countries. This has raised concern over the impact wide-spread use of heat-pumps may have on the grid. The characteristics of the loads connected to the power system are changing because of heat-pumps. Their performance during under-voltage events such as voltage dips has the potential to compound the event and possibly cause voltage collapse. In this study, results from testing six heat-pumps are presented to assess their performance at various voltages and hence their impact on voltage stability.

Memristors: Memory elements in potato tubers.

Science.gov (United States)

Volkov, Alexander G; Nyasani, Eunice K; Blockmon, Avery L; Volkova, Maya I

2015-01-01

A memristor is a nonlinear element because its current-voltage characteristic is similar to that of a Lissajous pattern for nonlinear systems. This element was postulated recently and researchers are looking for it in different biosystems. We investigated electrical circuitry of red Irish potato tubers (Solanum tuberosum L.). The goal was to discover if potato tubers might have a new electrical component - a resistor with memory. The analysis was based on a cyclic current-voltage characteristic where the resistor with memory should manifest itself. We found that the electrostimulation by bipolar sinusoidal or triangle periodic waves induces electrical responses in the potato tubers with fingerprints of memristors. Tetraethylammonium chloride, an inhibitor of voltage gated K(+) channels, transforms a memristor to a resistor in potato tubers. Our results demonstrate that a voltage gated K(+) channel in the excitable tissue of potato tubers has properties of a memristor. Uncoupler carbonylcyanide-4-trifluoromethoxy-phenyl hydrazone decreases the amplitude of electrical responses at low and high frequencies of bipolar periodic sinusoidal or triangle electrostimulating waves. The discovery of memristors in plants creates a new direction in the understanding of electrical phenomena in plants.

The classical Starling resistor model often does not predict inspiratory airflow patterns in the human upper airway.

Science.gov (United States)

Owens, Robert L; Edwards, Bradley A; Sands, Scott A; Butler, James P; Eckert, Danny J; White, David P; Malhotra, Atul; Wellman, Andrew

2014-04-15

The upper airway is often modeled as a classical Starling resistor, featuring a constant inspiratory airflow, or plateau, over a range of downstream pressures. However, airflow tracings from clinical sleep studies often show an initial peak before the plateau. To conform to the Starling model, the initial peak must be of small magnitude or dismissed as a transient. We developed a method to simulate fast or slow inspirations through the human upper airway, to test the hypothesis that this initial peak is a transient. Eight subjects [4 obstructive sleep apnea (OSA), 4 controls] slept in an "iron lung" and wore a nasal mask connected to a continuous/bilevel positive airway pressure machine. Downstream pressure was measured using an epiglottic catheter. During non-rapid eye movement (NREM) sleep, subjects were hyperventilated to produce a central apnea, then extrathoracic pressure was decreased slowly (∼2-4 s) or abruptly (resistor model, the upper airway exhibits marked NED in some subjects.

Low-temperature VRH conduction through complex materials in the presence of a temperature-dependent voltage threshold: A semi-classical percolative approach

International Nuclear Information System (INIS)

Sen, A.K.; Bhattacharya, S.

2006-12-01

In this paper, we study the variation of low temperature (T) dc conductance, G(T), of a semi-classical percolative Random Resistor cum Tunneling-bond Network (RRTN), in the presence of a linearly temperature-dependent microscopic voltage threshold, υ g (T). This model (proposed by our group in the early 90's) considers a phenomenological semi-classical tunneling (or, hopping through a barrier) process. Just as in our previous constant-υ g case, we find in the present study also that the variable range hopping (VRH) exponent γ varies continuously with the ohmic concentration p in a non-monotonic fashion. In addition, we observe a new shoulder-like behaviour of G(T) in the intermediate temperature range, below the conductance maximum. (author)

Room-temperature antiferromagnetic memory resistor.

Science.gov (United States)

Marti, X; Fina, I; Frontera, C; Liu, Jian; Wadley, P; He, Q; Paull, R J; Clarkson, J D; Kudrnovský, J; Turek, I; Kuneš, J; Yi, D; Chu, J-H; Nelson, C T; You, L; Arenholz, E; Salahuddin, S; Fontcuberta, J; Jungwirth, T; Ramesh, R

2014-04-01

The bistability of ordered spin states in ferromagnets provides the basis for magnetic memory functionality. The latest generation of magnetic random access memories rely on an efficient approach in which magnetic fields are replaced by electrical means for writing and reading the information in ferromagnets. This concept may eventually reduce the sensitivity of ferromagnets to magnetic field perturbations to being a weakness for data retention and the ferromagnetic stray fields to an obstacle for high-density memory integration. Here we report a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields. We use a resistor made of a FeRh AFM, which orders ferromagnetically roughly 100 K above room temperature, and therefore allows us to set different collective directions for the Fe moments by applied magnetic field. On cooling to room temperature, AFM order sets in with the direction of the AFM moments predetermined by the field and moment direction in the high-temperature ferromagnetic state. For electrical reading, we use an AFM analogue of the anisotropic magnetoresistance. Our microscopic theory modelling confirms that this archetypical spintronic effect, discovered more than 150 years ago in ferromagnets, is also present in AFMs. Our work demonstrates the feasibility of fabricating room-temperature spintronic memories with AFMs, which in turn expands the base of available magnetic materials for devices with properties that cannot be achieved with ferromagnets.

Low energy proton irradiation effects on InP/InGaAs DHBTs and InP-base frequency dividers

Science.gov (United States)

Zhang, Xingyao; Li, Yudong; Guo, Qi; Feng, Jie

2018-03-01

InP/InGaAs DHBTs and frequency dividers are irradiated by low energy proton, and displacement damage effect of the devices are analyzed. InP/InGaAs DHBTs has been made DC characteristics measurements, and the function measurement for frequency dividers has been done both before and after proton irradiation. The breakdown voltage of InP DHBTs drop to 3.7V When the fluence up to 5x1013 protons/cm2. Meanwhile, the function of frequency dividers get out of order. Degradation of DC characteristics of DHBTs are due to the radiation-induced defects in the quasi neutral base and the space charge region of base-collector and base-emitter junctions. The performance deterioration of DHBTs induce the fault of frequency dividers, and prescaler may be the most sensitive circuit.

Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

DEFF Research Database (Denmark)

Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

2013-01-01

Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system...... to unbalanced faults. The compensation of unbalanced voltage sags and voltage unbalance in the CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0........ The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbalances, for the tested cases in the CIGRE LV test network are mainly due to single phase loads and due...

Device for measuring active, reactive and apparent power

Energy Technology Data Exchange (ETDEWEB)

Bartosinski, E.; Wieland, J.

1982-09-30

The plan consists of a traditional electrodynamic mechanism for measuring power (IM) supplemented by three switches, two rectifiers, resistor, included in parallel, and phaseshifting throttle included in series with the voltage coil of the IM. This makes it possible by selection to perform three types of measurements: active power of alternating current or power of direct current, only the voltage coils and the IM current are engaged; reactive power, the resistor and the throttle are additionally engaged by the aforementioned method; complete (apparent) power--the current and the voltage are supplied directly to the IM coils, but in contrast to the first case, through rectifiers. The influence of the highest harmonic components of voltage and current which are not significant for industrial measurements can be eliminated in necessary cases using filtering devices.

Integral Battery Power Limiting Circuit for Intrinsically Safe Applications

Science.gov (United States)

Burns, Bradley M.; Blalock, Norman N.

2010-01-01

A circuit topology has been designed to guarantee the output of intrinsically safe power for the operation of electrical devices in a hazardous environment. This design uses a MOSFET (metal oxide semiconductor field-effect transistor) as a switch to connect and disconnect power to a load. A test current is provided through a separate path to the load for monitoring by a comparator against a preset threshold level. The circuit is configured so that the test current will detect a fault in the load and open the switch before the main current can respond. The main current passes through the switch and then an inductor. When a fault occurs in the load, the current through the inductor cannot change immediately, but the voltage drops immediately to safe levels. The comparator detects this drop and opens the switch before the current in the inductor has a chance to respond. This circuit protects both the current and voltage from exceeding safe levels. Typically, this type of protection is accomplished by a fuse or a circuit breaker, but in order for a fuse or a circuit breaker to blow or trip, the current must exceed the safe levels momentarily, which may be just enough time to ignite anything in a hazardous environment. To prevent this from happening, a fuse is typically current-limited by the addition of the resistor to keep the current within safe levels while the fuse reacts. The use of a resistor is acceptable for non-battery applications where the wasted energy and voltage drop across the resistor can be tolerated. The use of the switch and inductor minimizes the wasted energy. For example, a circuit runs from a 3.6-V battery that must be current-limited to 200 mA. If the circuit normally draws 10 mA, then an 18-ohm resistor would drop 180 mV during normal operation, while a typical switch (0.02 ohm) and inductor (0.97 ohm) would only drop 9.9 mV. From a power standpoint, the current-limiting resistor protection circuit wastes about 18 times more power than the

Designing a Signal Conditioning System with Software Calibration for Resistor-feedback Patch Clamp Amplifier.

Science.gov (United States)

Hu, Gang; Zhu, Quanhui; Qu, Anlian

2005-01-01

In this paper, a programmable signal conditioning system based on software calibration for resistor-feedback patch clamp amplifier (PCA) has been described, this system is mainly composed of frequency correction, programmable gain and filter whose parameters are configured by software automatically to minimize the errors, A lab-designed data acquisition system (DAQ) is used to implement data collections and communications with PC. The laboratory test results show good agreement with design specifications.

Low-voltage circuit breaker arcs—simulation and measurements

International Nuclear Information System (INIS)

Yang, Fei; Wu, Yi; Rong, Mingzhe; Sun, Hao; Ren, Zhigang; Niu, Chunping; Murphy, Anthony B

2013-01-01

As one of the most important electrical components, the low-voltage circuit breaker (LVCB) has been widely used for protection in all types of low-voltage distribution systems. In particular, the low-voltage dc circuit breaker has been arousing great research interest in recent years. In this type of circuit breaker, an air arc is formed in the interrupting process which is a 3D transient arc in a complex chamber geometry with splitter plates. Controlling the arc evolution and the extinction are the most significant problems. This paper reviews published research works referring to LVCB arcs. Based on the working principle, the arcing process is divided into arc commutation, arc motion and arc splitting; we focus our attention on the modelling and measurement of these phases. In addition, previous approaches in papers of the critical physical phenomenon treatment are discussed, such as radiation, metal erosion, wall ablation and turbulence in the air arc. Recommendations for air arc modelling and measurement are presented for further investigation. (topical review)

The Researching on Evaluation of Automatic Voltage Control Based on Improved Zoning Methodology

Science.gov (United States)

Xiao-jun, ZHU; Ang, FU; Guang-de, DONG; Rui-miao, WANG; De-fen, ZHU

2018-03-01

According to the present serious phenomenon of increasing size and structure of power system, hierarchically structured automatic voltage control(AVC) has been the researching spot. In the paper, the reduced control model is built and the adaptive reduced control model is researched to improve the voltage control effect. The theories of HCSD, HCVS, SKC and FCM are introduced and the effect on coordinated voltage regulation caused by different zoning methodologies is also researched. The generic framework for evaluating performance of coordinated voltage regulation is built. Finally, the IEEE-96 stsyem is used to divide the network. The 2383-bus Polish system is built to verify that the selection of a zoning methodology affects not only the coordinated voltage regulation operation, but also its robustness to erroneous data and proposes a comprehensive generic framework for evaluating its performance. The New England 39-bus network is used to verify the adaptive reduced control models’ performance.

Design and performance of a 2-megawatt high voltage dc test load

International Nuclear Information System (INIS)

Horan, D.; Kustom, R.; Ferguson, M.

1994-01-01

A high-power water-cooled resistive load which simulates the electrical load characteristics of a high-power klystron, capable of a 2 MW dissipation at 95 kV DC, is designed and installed. The load utilizes wirewound resistor elements suspended inside G-11 insulated tubing contained within a single-wall 316 stainless steel pressure vessel with flanged elliptical heads. The vessel supplies a continuous flow of deionized water. Baffles fabricated from G-10 sheets support the tubing and promote water turbulence to maximize heat removal. A companion oil tank houses resistive filament and mod-anode power supply test loads, plus an electrical interlock system which provides protection from inadequate water flow, excessive oil temperature, and arcing in either the pressure vessel or oil tank. A secondary safety system consists of both hydrostatic and steam pressure relief valves on the pressure vessel. Power supply tests indicate the load simulates the electrical load characteristics of a high-power klystron to a degree sufficient to accurately performance-test the rf high voltage power supplies used at the Advanced Photon Source

Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures

CERN Document Server

Saveliev, V

2000-01-01

The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450-600 nm is one of the critical issues for experimental physics - registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10 sup 5 -10 sup 6) has been designed, manufactured and tested for registration of visible light photons and charge particles. The main features of Metal-Resistor-Semiconductor (MRS) structures are the high charge multiplication in nonuniform electric field near the 'needle' pn-junction and negative feedback for stabilization of avalanche process due to resistive layer.

Simulasi Dinamika untuk Menentukan Stabilitas Sistem Tenaga Listrik Menggunakan Thyristor Controlled Braking Resistor pada Sistem IEEE 34 Node Test Feeder

Directory of Open Access Journals (Sweden)

Andi Taufiq

2012-09-01

Full Text Available Terdapat berbagai macam metode untuk meningkatkan stabilitas sistem  tenaga listrik. Salah satunya adalah dengan menggunakan metode pengereman dinamis (dynamic braking. Generator sinkron sebagai distributed generator yang digerakkan oleh mesin diesel. Pada saat terjadi gangguan pada sistem, digunakan sebuah Thyristor Controlled Braking Resistor (TCBR untuk meredam osilasi yang terjadi. Sistem yang hendak dianalisis dinamika dan stabilitasnnya adalah IEEE 34 node test feeder. Dengan sistem ini diilustrasikan karakteristik dan keefektifan TCBR untuk meredam osilasi frekuensi rendah dan mencegah terjadinya ketidakstabilan transien sistem. Dari hasil analisis diperoleh bahwa dengan adanya penambahan TCBR (Thyristor Controlled Braking Resistor maka respon transien sistem akan menjadi lebih baik. Hal ini ditunjukkan dengan adanya penurunan overshoot dan settling timenya. Dengan demikian sistem akan menuju kondisi stabil dengan lebih cepat setelah terjadi gangguan.

A CMOS frontend chip for implantable neural recording with wide voltage supply range

International Nuclear Information System (INIS)

Liu Jialin; Zhang Xu; Hu Xiaohui; Li Peng; Liu Ming; Chen Hongda; Guo Yatao; Li Bin

2015-01-01

A design for a CMOS frontend integrated circuit (chip) for neural signal acquisition working at wide voltage supply range is presented in this paper. The chip consists of a preamplifier, a serial instrumental amplifier (IA) and a cyclic analog-to-digital converter (CADC). The capacitive-coupled and capacitive-feedback topology combined with MOS-bipolar pseudo-resistor element is adopted in the preamplifier to create a −3 dB upper cut-off frequency less than 1 Hz without using a ponderous discrete device. A dual-amplifier instrumental amplifier is used to provide a low output impedance interface for ADC as well as to boost the gain. The preamplifier and the serial instrumental amplifier together provide a midband gain of 45.8 dB and have an input-referred noise of 6.7 μV rms integrated from 1 Hz to 5 kHz. The ADC digitizes the amplified signal at 12-bits precision with a highest sampling rate of 130 kS/s. The measured effective number of bits (ENOB) of the ADC is 8.7 bits. The entire circuit draws 165 to 216 μA current from the supply voltage varied from 1.34 to 3.3 V. The prototype chip is fabricated in the 0.18-μm CMOS process and occupies an area of 1.23 mm 2 (including pads). In-vitro recording was successfully carried out by the proposed frontend chip. (paper)

A Voltage Doubler Circuit to Extend the Soft-switching Range of Dual Active Bridge Converters

DEFF Research Database (Denmark)

Qin, Zian; Shen, Yanfeng; Wang, Huai

2017-01-01

A voltage doubler circuit is realized to extend the soft-switching range of Dual Active Bridge (DAB) converters. No extra hardware is added to the DAB to form this circuit, since it is composed of the dc blocking capacitor and the low side full bridge converter, which already exist in DAB....... With the voltage doubler, the DAB converter can achieve soft switching and high efficiency when the low side dc voltage is close to 2 pu (1 pu is the high side dc voltage divided by the transformer turn ratio), which can be realized only when the low side dc voltage is close to 1 pu by using the conventional phase...... shift modulation in DAB. Thus the soft switching range is extended. The soft switching boundary conditions are derived. A map to show the soft switching or hard switching in the full load and voltage range is obtained. The feasibility and effectiveness of the proposed method is finally verified...

Reduction of characteristic RL time for fast, efficient magnetic levitation

Directory of Open Access Journals (Sweden)

Yuqing Li

2017-09-01

Full Text Available We demonstrate the reduction of characteristic time in resistor-inductor (RL circuit for fast, efficient magnetic levitation according to Kirchhoff’s circuit laws. The loading time is reduced by a factor of ∼4 when a high-power resistor is added in series with the coils. By using the controllable output voltage of power supply and voltage of feedback circuit, the loading time is further reduced by ∼ 3 times. The overshoot loading in advance of the scheduled magnetic field gradient is equivalent to continuously adding a resistor without heating. The magnetic field gradient with the reduced loading time is used to form the upward magnetic force against to the gravity of the cooled Cs atoms, and we obtain an effectively levitated loading of the Cs atoms to a crossed optical dipole trap.

High-performance and low-power rewritable SiOx 1 kbit one diode-one resistor crossbar memory array.

Science.gov (United States)

Wang, Gunuk; Lauchner, Adam C; Lin, Jian; Natelson, Douglas; Palem, Krishna V; Tour, James M

2013-09-14

An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx -based one diode-one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Conduction in rectangular quasi-one-dimensional and two-dimensional random resistor networks away from the percolation threshold.

Science.gov (United States)

Kiefer, Thomas; Villanueva, Guillermo; Brugger, Jürgen

2009-08-01

In this study we investigate electrical conduction in finite rectangular random resistor networks in quasione and two dimensions far away from the percolation threshold p(c) by the use of a bond percolation model. Various topologies such as parallel linear chains in one dimension, as well as square and triangular lattices in two dimensions, are compared as a function of the geometrical aspect ratio. In particular we propose a linear approximation for conduction in two-dimensional systems far from p(c), which is useful for engineering purposes. We find that the same scaling function, which can be used for finite-size scaling of percolation thresholds, also applies to describe conduction away from p(c). This is in contrast to the quasi-one-dimensional case, which is highly nonlinear. The qualitative analysis of the range within which the linear approximation is legitimate is given. A brief link to real applications is made by taking into account a statistical distribution of the resistors in the network. Our results are of potential interest in fields such as nanostructured or composite materials and sensing applications.

Design of an accelerator tube for 500 keV/10 mA electron beam machine

International Nuclear Information System (INIS)

Maksum, W.; Sudjatmoko; Suprapto

1999-01-01

A design of an accelerator tube for 500 keV/10 mA electron beam machine was carried out. This tube was used for focussing and accelerating of electron beams. The tube was designed to consist of some electrodes insulator tubes and a voltage divider. The electrodes was made of stainless steel due to its low outgassing constant and stainless, the insulator was made of pyrex glass due to its low outgassing constant and high temperature proof and the voltage divider was made of high-ohmic resistors used for accelerating potential distribution at the electrodes. The stainless steel electrodes were comic shaped 3 mm thick with 134 mm inlet diameter and 60 mm outlet diameter. The number for this electrodes was 34 so that the potential gap between adjacent electrodes not exceed 15 kV. The insulators were 5 mm thick, 150 mm outer diameter, 140 mm inner diameter and 32 mm long. The insulators were joined to the electrodes by using an epoxy form an accelerator tube. The designed accelerator tube could be constructed and operated at a vacuum of 10 -6 torr and accelerated electron beam at an energy of 500 keV. (author)

High-Input Impedance Voltage-Mode Multifunction Filter with Four Grounded Components and Only Two Plus-Type DDCCs

Directory of Open Access Journals (Sweden)

Hua-Pin Chen

2010-01-01

Full Text Available This paper introduces a novel voltage-mode multifunction biquadratic filter with single input and four outputs using two plus-type differential difference current conveyors (DDCCs and four grounded passive components. The filter can realize inverting highpass, inverting bandpass, noninverting lowpass, and noninverting bandpass filter responses, simultaneously. It still maintains the following advantages: (i using grounded capacitors attractive for integration and absorbing shunt parasitic capacitance, (ii using grounded resistors at all X terminals of DDCCs suitable for the variations of filter parameters and absorbing series parasitic resistances at all X terminals of DDCCs, (iii high-input impedance good for cascadability, (iv no need to change the filter topology, (v no need to component-matching conditions, (vi low active and passive sensitivity performances, and (vii simpler configuration due to the use of plus-type DDCCs only. HSPICE and MATLAB simulations results are provided to demonstrate the theoretical analysis.

Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

Science.gov (United States)

Olszacki, M.; Maj, C.; Bahri, M. Al; Marrot, J.-C.; Boukabache, A.; Pons, P.; Napieralski, A.

2010-06-01

Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 × 1017 at cm-3 to 1.6 × 1019 at cm-3. The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 1018-1019 at cm-3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.

Experimental verification of temperature coefficients of resistance for uniformly doped P-type resistors in SOI

International Nuclear Information System (INIS)

Olszacki, M; Maj, C; Al Bahri, M; Marrot, J-C; Boukabache, A; Pons, P; Napieralski, A

2010-01-01

Many today's microsystems like strain-gauge-based piezoresistive pressure sensors contain doped resistors. If one wants to predict correctly the temperature impact on the performance of such devices, the accurate data about the temperature coefficients of resistance (TCR) are essential. Although such data may be calculated using one of the existing mobility models, our experiments showed that we can observe the huge mismatch between the calculated and measured values. Thus, in order to investigate the TCR values, a set of the test structures that contained doped P-type resistors was fabricated. As the TCR value also depends on the doping profile shape, we decided to use the very thin, 340 nm thick SOI wafers in order to fabricate the quasi-uniformly doped silicon layers ranging from 2 × 10 17 at cm −3 to 1.6 × 10 19 at cm −3 . The results showed that the experimental data for the first-order TCR are quite far from the calculated ones especially over the doping range of 10 18 –10 19 at cm −3 and quite close to the experimental ones obtained by Bullis about 50 years ago for bulk silicon. Moreover, for the first time, second-order coefficients that were not very consistent with the calculations were obtained.

Interface analysis of embedded chip resistor device package and its effect on drop shock reliability.

Science.gov (United States)

Park, Se-Hoon; Kim, Sun Kyoung; Kim, Young-Ho

2012-04-01

In this study, the drop reliability of an embedded passive package is investigated under JESD22-B111 condition. Chip resistors were buried in a PCB board, and it was electrically interconnected by electroless and electrolytic copper plating on a tin pad of a chip resistor without intermetallic phase. However tin, nickel, and copper formed a complex intermetallic phase, such as (Cu, Ni)6Sn5, (Cu, Ni)3Sn, and (Ni, Cu)3Sn2, at the via interface and via wall after reflow and aging. Since the amount of the tin layer was small compared with the solder joint, excessive intermetallic layer growth was not observed during thermal aging. Drop failures are always initiated at the IMC interface, and as aging time increases Cu-Sn-Ni IMC phases are transformed continuously due to Cu diffusion. We studied the intermetallic formation of the Cu via interface and simulated the stress distribution of drop shock by using material properties and board structure of embedded passive boards. The drop simulation was conducted according to the JEDEC standard. It was revealed that the crack starting point related to failure fracture changed due to intermetallic phase transformation along the via interface, and the position where failure occurs experimentally agrees well with our simulation results.

Evaluation of the practical peak voltage quantity for clinical equipment in diagnostic radiology

International Nuclear Information System (INIS)

Pires, Joao dos Santos Justo

2007-01-01

The objective of this work is to evaluate the calculation of the Practical Peak Voltage (PPV) from the voltage waveform and the kerma contrast for two kinds of X-ray equipment: a single phase clinical equipment, a three phase clinical equipment. The PPV from a mammography system voltage waveform will also be established. The development of this work involves intermediate objectives that indicate the quality of the used methods to calculate the PPV. One of these intermediate objectives is the comparison between the invasive calculations of PPV (using a voltage divider) with the response of kVp meter that calculate the PPV. Another intermediate objective is to compare the PPV with the Contrast Equivalent Voltage (the original non-invasive PPV definition). The variation of the PPV with quantities that influence in the voltage waveform like ripple and sample rate will also be contemplated in this work. The results showed that the PPV quantity could be invasive determined trustworthy. Therefore, the ripple quantity is the mainly influence to determinate the PPV that affecting the non-invasive determination. This fact suggest that the non-invasive instruments manufacturers must reevaluate the calculation of the PPV quantity in their instruments. (author)

Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

DEFF Research Database (Denmark)

Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

2017-01-01

This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... optimization. The proposed method is used to calculate the voltage bands and droop settings of PV inverters at each node by the supervisory controller. The local controller of each PV inverter implements the volt/var control and if necessary, the active power curtailment as per the received settings and based...... on measured local voltages. The advantage of the proposed method is that the calculated reactive power and active power droop settings enable fair contribution of the PV inverters at each node to the voltage regulation. Simulation studies are conducted using DigSilent Power factory software on a simplified...

Optimization of Nanowire-Resistance Load Logic Inverter.

Science.gov (United States)

Hashim, Yasir; Sidek, Othman

2015-09-01

This study is the first to demonstrate characteristics optimization of nanowire resistance load inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. Results indicate that optimization depends on resistance value. Increasing of load resistor tends to increasing in noise margins until saturation point, increasing load resistor after this point will not improve noise margins significantly.

Radiation detector arrangements and methods

International Nuclear Information System (INIS)

Jackson, J.

1989-01-01

The patent describes a radiation detector arrangement. It comprises at least one detector element in the form of a temperature-sensitive resistor whose electrical resistance changes in response to radiation incident on the detector element, the resistor having a high positive temperature coefficient of electrical resistance at a transition in its electrical conductance, circuit means for applying a voltage across the resistor during operation of the detector arrangement, and temperature-regulation means for regulating the temperature of the resistor so as to operate the resistor in the transition, characterised in that the temperature-regulation means comprises the resistor and the circuit means which passes sufficient current through the resistor by resistance heating to a position in the transition at which a further increase in its temperature in response to incident radiation reduces the resistance heating by reducing the current, thereby stabilizing the temperature of the resistor at the position. The positive temperature coefficient at the position being sufficiently high that the change in the resistance heating produced by a change in the temperature of the resistor at the position is larger than a change in power of the incident radiation required to produce that same change in temperature of the resistor in the absence of any change in resistance heating

Logarithmic corrections to scaling in critical percolation and random resistor networks.

Science.gov (United States)

Stenull, Olaf; Janssen, Hans-Karl

2003-09-01

We study the critical behavior of various geometrical and transport properties of percolation in six dimensions. By employing field theory and renormalization group methods we analyze fluctuation induced logarithmic corrections to scaling up to and including the next-to-leading order correction. Our study comprehends the percolation correlation function, i.e., the probability that two given points are connected, and some of the fractal masses describing percolation clusters. To be specific, we calculate the mass of the backbone, the red bonds, and the shortest path. Moreover, we study key transport properties of percolation as represented by the random resistor network. We investigate the average two-point resistance as well as the entire family of multifractal moments of the current distribution.

Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

DEFF Research Database (Denmark)

Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

2013-01-01

Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage p....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0.......Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage...... problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults...

Minimum spanning trees and random resistor networks in d dimensions.

Science.gov (United States)

Read, N

2005-09-01

We consider minimum-cost spanning trees, both in lattice and Euclidean models, in d dimensions. For the cost of the optimum tree in a box of size L , we show that there is a correction of order L(theta) , where theta or =1 . The arguments all rely on the close relation of Kruskal's greedy algorithm for the minimum spanning tree, percolation, and (for some arguments) random resistor networks. The scaling of the entropy and free energy at small nonzero T , and hence of the number of near-optimal solutions, is also discussed. We suggest that the Steiner tree problem is in the same universality class as the minimum spanning tree in all dimensions, as is the traveling salesman problem in two dimensions. Hence all will have the same value of theta=-3/4 in two dimensions.

Modulation Technique for Four-Leg Voltage Source Inverter without a Look-Up Table

DEFF Research Database (Denmark)

Ebrahimzadeh, Esmaeil; Farhangi, Shahrokh; Iman-Eini, Hossein

2016-01-01

Three-dimensional space-vector modulation (3D SVM) has more popularity among the other modulation techniques of the four-leg inverter due to higher DC-link voltage utilisation. Sequencing schemes of the switching vectors in the 3D SVM are divided into Class I and II categories. Each of these clas...

Alpha- and gamma-detection by the avalanche detectors with metal-resistor-semiconductor structure

International Nuclear Information System (INIS)

Vetokhin, S.S.; Evtushenko, V.P.; Zalesskij, V.B.; Malyshev, S.A.; Chudakov, V.A.; Shunevich, S.A.

1992-01-01

Possibility to use silicon avalanche photodetectors with metal-resistor-semiconductor structure with 0.12 cm 2 photosensitive area as detectors of α-particles, as well as, photodetector of γ-quanta scintillation detector is shown. When detection of α-particles the energy resolution reaches 10%. R energy resolution for avalanche photodetector-CsI(Tl) scintillator system cooled up to - 60 deg C at 59 keV ( 241 Am) and 662 keV ( 137 Cs) energy of γ-quanta constitutes 60% and 80%, respectively. R minimal value in the conducted experiments is determined by the degree of irregularity of avalanche amplification along the photodetector area

Quantum resistor-capacitor circuit with Majorana fermion modes in a chiral topological superconductor.

Science.gov (United States)

Lee, Minchul; Choi, Mahn-Soo

2014-08-15

We investigate the mesoscopic resistor-capacitor circuit consisting of a quantum dot coupled to spatially separated Majorana fermion modes in a chiral topological superconductor. We find substantially enhanced relaxation resistance due to the nature of Majorana fermions, which are their own antiparticles and are composed of particle and hole excitations in the same abundance. Further, if only a single Majorana mode is involved, the zero-frequency relaxation resistance is completely suppressed due to a destructive interference. As a result, the Majorana mode opens an exotic dissipative channel on a superconductor which is typically regarded as dissipationless due to its finite superconducting gap.

Development of a New Cascade Voltage-Doubler for Voltage Multiplication

OpenAIRE

Toudeshki, Arash; Mariun, Norman; Hizam, Hashim; Abdul Wahab, Noor Izzri

2014-01-01

For more than eight decades, cascade voltage-doubler circuits are used as a method to produce DC output voltage higher than the input voltage. In this paper, the topological developments of cascade voltage-doublers are reviewed. A new circuit configuration for cascade voltage-doubler is presented. This circuit can produce a higher value of the DC output voltage and better output quality compared to the conventional cascade voltage-doubler circuits, with the same number of stages.

First unitary, then divided: the temporal dynamics of dividing attention.

Science.gov (United States)

Jefferies, Lisa N; Witt, Joseph B

2018-04-24

Whether focused visual attention can be divided has been the topic of much investigation, and there is a compelling body of evidence showing that, at least under certain conditions, attention can be divided and deployed as two independent foci. Three experiments were conducted to examine whether attention can be deployed in divided form from the outset, or whether it is first deployed as a unitary focus before being divided. To test this, we adapted the methodology of Jefferies, Enns, and Di Lollo (Journal of Experimental Psychology: Human Perception and Performance 40: 465, 2014), who used a dual-stream Attentional Blink paradigm and two letter-pair targets. One aspect of the AB, Lag-1 sparing, has been shown to occur only if the second target pair appears within the focus of attention. By presenting the second target pair at various spatial locations and assessing the magnitude of Lag-1 sparing, we probed the spatial distribution of attention. By systematically manipulating the stimulus-onset-asynchrony between the targets, we also tracked changes to the spatial distribution of attention over time. The results showed that even under conditions which encourage the division of attention, the attentional focus is first deployed in unitary form before being divided. It is then maintained in divided form only briefly before settling on a single location.

Alternative connections for the large MFTF-B solenoids

International Nuclear Information System (INIS)

Owen, E.W.; Shimer, D.W.; Wang, S.T.

1983-01-01

The MFTF-B central-cell solenoids are a set of twelve closely coupled, large superconducting magnets with similar but not exactly equal currents. Alternative methods of connecting them to their power supplies and dump resistors are investigated. The circuits are evaluated for operating conditions and fault conditions. The factors considered are the voltage to ground during a dump, short circuits, open circuits, quenches, and failure of the protection system to detect a quench. Of particular interest are the current induced in coils that remain superconducting when one or more coils quench. The alternative connections include separate power supplies, combined power supplies, individual dump resistors, series dump resistors and combinations of these. A new circuit that contains coupling resistors is proposed. The coupling resistors do not affect normal fast dumps but reduce the peak induced currents while also reducing the energy rating of the dump resistors. Another novel circuit, the series circuit with diodes, is discussed in detail

Suppressing voltage transients in high voltage power supplies

International Nuclear Information System (INIS)

Lickel, K.F.; Stonebank, R.

1979-01-01

A high voltage power supply for an X-ray tubes includes voltage adjusting means, a high voltage transformer, switch means connected to make and interrupt the primary current of the transformer, and over-voltage suppression means to suppress the voltage transient produced when the current is switched on. In order to reduce the power losses in the suppression means, an impedance is connected in the transformer primary circuit on operation of the switch means and is subsequently short-circuited by a switch controlled by a timer after a period which is automatically adjusted to the duration of the transient overvoltage. (U.K.)

A fractional-N frequency divider for multi-standard wireless transceiver fabricated in 0.18 μm CMOS process

Science.gov (United States)

Wang, Jiafeng; Fan, Xiangning; Shi, Xiaoyang; Wang, Zhigong

2017-12-01

With the rapid evolution of wireless communication technology, integrating various communication modes in a mobile terminal has become the popular trend. Because of this, multi-standard wireless technology is one of the hot spots in current research. This paper presents a wideband fractional-N frequency divider of the multi-standard wireless transceiver for many applications. High-speed divider-by-2 with traditional source-coupled-logic is designed for very wide band usage. Phase switching technique and a chain of divider-by-2/3 are applied to the programmable frequency divider with 0.5 step. The phase noise of the whole frequency synthesizer will be decreased by the narrower step of programmable frequency divider. Δ-Σ modulator is achieved by an improved MASH 1-1-1 structure. This structure has excellent performance in many ways, such as noise, spur and input dynamic range. Fabricated in TSMC 0.18μm CMOS process, the fractional-N frequency divider occupies a chip area of 1130 × 510 μm2 and it can correctly divide within the frequency range of 0.8-9 GHz. With 1.8 V supply voltage, its division ratio ranges from 62.5 to 254 and the total current consumption is 29 mA.

Technical presentation of SCR

CERN Multimedia

FI Department

2008-01-01

SCR Société des Composants Record, Montierchaume, France Monday 20 October 2008 from 9:45 to 12:00 – Room A Main Building (Bldg. 61/1-017) http://www.scr.fr SCR develops, manufactures and markets plastic dielectric capacitors (polypropylene, polyester, Teflon) for use in various applications: audio amplifiers, high-end loudspeakers, fans and extractors (multi-capacitance capacitors), pulsed lasers, flash lamps, defibrillators, beacons, power supplies, converters for rail traction drives, railway signalling devices, voltage dividers and multipliers, high voltage laboratories, etc. The company is renowned for its precision wire-wound resistors for use in power electronics and consumer electronics marketed under the SETA brand name. SCR is also experienced in the design and production of electronic circuits for various applications, such as speed variators for mono and three-phase motors, dimmers, passive filters for audio speakers, etc. Contact : M. Urs V. Rölli, e-mail: mailto:info@technictrade.ch.

Calibration of kV measurers with the practical peak voltage (IEC 1676)

International Nuclear Information System (INIS)

Becker, Paulo H.B.; Peres, Marcos A.L.; Ludwig, Jaime L.; Chernicharo, Carlos C.

2002-01-01

The IEC 1676 standard introduces a new quantity for the measurements of the high voltages applied to the X ray tubes used for diagnosis, the 'Practical Peak Voltage' (PPV). In order to start the introduction of this new quantity in Brazil the National Laboratory for Metrology of Ionizing Radiation has developed a procedure for calibrating measuring instruments in this quantity. This procedure is based in the same set up used for the calibration of the conventional kVp, which consists in a high voltage divider (Dynalyser III from Radcal Corporation), a fast analogue to digital conversion board and a data acquisition software. In order to evaluate this procedure a commercial kVp measure instrument that is able to measure PPV (Universal Diavolt from PTW) was calibrated and the results compared. This work presents a summary of the procedure developed and the results obtained with the comparison. (author)

Conquering the digital divide: Botswana and South Korea digital divide status and interventions

Directory of Open Access Journals (Sweden)

Nonofo C. Sedimo

2011-11-01

Objectives: Bridging the digital divide and narrowing the intra-national divide brings about global information and communication technology (ICT usage that translates into changing work patterns and eventually transformed economies. This article outlines the different interventions implemented in Botswana to bridge the divide. The South Korean experience in bridging the divide is discussed so as to serve as lessons on how to effectively bridge the divide to Botswana’s initiatives. Method: Using a mix of exploratory and empirical study, this article presents the findings on the status of ICT uptake in Botswana and investigates the level of the digital divide in the country. Results: The results of the study show that the digital divide is much more evident in Botswana than in South Korea. South Korea has put in place robust strategic initiatives towards reducing the digital divide and this has largely transcended into its transformation into a full-fledged knowledge society. Conclusion: This article is timely as it unearths the different pointers that may be utilised in policy formation and what interventions need to be taken at both the individual and national level to bridge the digital divide.

Voltage-dependent gating in a "voltage sensor-less" ion channel.

Directory of Open Access Journals (Sweden)

Harley T Kurata

2010-02-01

Full Text Available The voltage sensitivity of voltage-gated cation channels is primarily attributed to conformational changes of a four transmembrane segment voltage-sensing domain, conserved across many levels of biological complexity. We have identified a remarkable point mutation that confers significant voltage dependence to Kir6.2, a ligand-gated channel that lacks any canonical voltage-sensing domain. Similar to voltage-dependent Kv channels, the Kir6.2[L157E] mutant exhibits time-dependent activation upon membrane depolarization, resulting in an outwardly rectifying current-voltage relationship. This voltage dependence is convergent with the intrinsic ligand-dependent gating mechanisms of Kir6.2, since increasing the membrane PIP2 content saturates Po and eliminates voltage dependence, whereas voltage activation is more dramatic when channel Po is reduced by application of ATP or poly-lysine. These experiments thus demonstrate an inherent voltage dependence of gating in a "ligand-gated" K+ channel, and thereby provide a new view of voltage-dependent gating mechanisms in ion channels. Most interestingly, the voltage- and ligand-dependent gating of Kir6.2[L157E] is highly sensitive to intracellular [K+], indicating an interaction between ion permeation and gating. While these two key features of channel function are classically dealt with separately, the results provide a framework for understanding their interaction, which is likely to be a general, if latent, feature of the superfamily of cation channels.

Transient voltage sharing in series-coupled high voltage switches

Directory of Open Access Journals (Sweden)

Editorial Office

1992-07-01

Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

Two-point resistance of a resistor network embedded on a globe.

Science.gov (United States)

Tan, Zhi-Zhong; Essam, J W; Wu, F Y

2014-07-01

We consider the problem of two-point resistance in an (m-1) × n resistor network embedded on a globe, a geometry topologically equivalent to an m × n cobweb with its boundary collapsed into one single point. We deduce a concise formula for the resistance between any two nodes on the globe using a method of direct summation pioneered by one of us [Z.-Z. Tan, L. Zhou, and J. H. Yang, J. Phys. A: Math. Theor. 46, 195202 (2013)]. This method is contrasted with the Laplacian matrix approach formulated also by one of us [F. Y. Wu, J. Phys. A: Math. Gen. 37, 6653 (2004)], which is difficult to apply to the geometry of a globe. Our analysis gives the result in the form of a single summation.

Power conditioning using dynamic voltage restorers under different voltage sag types.

Science.gov (United States)

Saeed, Ahmed M; Abdel Aleem, Shady H E; Ibrahim, Ahmed M; Balci, Murat E; El-Zahab, Essam E A

2016-01-01

Voltage sags can be symmetrical or unsymmetrical depending on the causes of the sag. At the present time, one of the most common procedures for mitigating voltage sags is by the use of dynamic voltage restorers (DVRs). By definition, a DVR is a controlled voltage source inserted between the network and a sensitive load through a booster transformer injecting voltage into the network in order to correct any disturbance affecting a sensitive load voltage. In this paper, modelling of DVR for voltage correction using MatLab software is presented. The performance of the device under different voltage sag types is described, where the voltage sag types are introduced using the different types of short-circuit faults included in the environment of the MatLab/Simulink package. The robustness of the proposed device is evaluated using the common voltage sag indices, while taking into account voltage and current unbalance percentages, where maintaining the total harmonic distortion percentage of the load voltage within a specified range is desired. Finally, several simulation results are shown in order to highlight that the DVR is capable of effective correction of the voltage sag while minimizing the grid voltage unbalance and distortion, regardless of the fault type.

N Channel JFET Based Digital Logic Gate Structure

Science.gov (United States)

Krasowski, Michael J (Inventor)

2013-01-01

An apparatus is provided that includes a first field effect transistor with a source tied to zero volts and a drain tied to voltage drain drain (Vdd) through a first resistor. The apparatus also includes a first node configured to tie a second resistor to a third resistor and connect to an input of a gate of the first field effect transistor in order for the first field effect transistor to receive a signal. The apparatus also includes a second field effect transistor configured as a unity gain buffer having a drain tied to Vdd and an uncommitted source.

Online junction temperature measurement using peak gate current

DEFF Research Database (Denmark)

Baker, Nick; Munk-Nielsen, Stig; Iannuzzo, Francesco

2015-01-01

A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current...

Mitigation of voltage sags in the distribution system with dynamic voltage restorer

International Nuclear Information System (INIS)

Viglas, D.; Belan, A.

2012-01-01

Dynamic voltage restorer is a custom power device that is used to improve voltage sags or swells in electrical distribution system. The components of the Dynamic Voltage Restorer consist of injection transformers, voltage source inverter, passive filters and energy storage. The main function of the Dynamic voltage restorer is used to inject three phase voltage in series and in synchronism with the grid voltages in order to compensate voltage disturbances. This article deals with mitigation of voltage sags caused by three-phase short circuit. Dynamic voltage restorer is modelled in MATLAB/Simulink. (Authors)

IDENTIFIKASI NILAI HAMBAT JENIS ARANG KAYU, ARANG KULIT MANGGA, DAN ARANG KULIT PISANG: BAHAN ALTERNATIF PENGGANTI RESISTOR FILM KARBON

Directory of Open Access Journals (Sweden)

Intan Kusumawati

2014-05-01

Full Text Available Penelitian ini bertujuan untuk mengetahui nilai hambat jenis pada arang kayu, arang kulit mangga, dan arang kulit pisang sebagai bahan alternatif pengganti resistor film karbon. Pada penelitian ini dilakukan penumbukkan arang kayu, arang kulit mangga, dan kulit pisang sehingga dihasilkan bubuk arang yang halus melalui proses penyaringan. Setelah itu dilakukan pemampatan arang kayu dalam pipet/sedotan plastik dengan luas permukaan (A = 4,08 x 10-4 cm. Kemudian hambatan diukur menggunakan multimeter dan dilakukan perhitungan hambat jenis arang tersebut. Hasil penelitian menunjukkan bahwa arang kayu (0,73 x 106 m memiliki nilai hambat yang tinggi sehingga hambat jenisnya juga lebih tinggi dibandingkan dengan arang kulit mangga (0,28 x 106  m dan arang kulit pisang (0,24 x 106 m. Hal ini dikarenakan terjadi proses karbonisasi sempurna dalam pembuatan arang kayu. Oleh karena nilai hambatan yang dapat terbaca pada multimeter hanya menggunakan batas skala yang besar (Mega Ohm, maka arang kulit kayu, arang kulit mangga, dan arang kulit pisang hanya dapat dijadikan sebagai bahan alternatif pengganti resistor film karbon dengan ukuran nilai hambatan besar.

Microstructure development in RuO2-glass thick-film resistors and its effect on the electrical resistivity

International Nuclear Information System (INIS)

Yamaguchi, T.; Iizuka, K.

1990-01-01

Microstructure development in RuO 2 -glass thick-film resistors has been studied by optical microscopy with special emphasis on the effect of glass particle size and mixing and firing conditions. The microstructure development has been characterized by the coalescence of glass grains, infiltration of glass into RuO 2 particle aggregates, and agglomeration of RuO 2 particles. The resistivity-firing temperature relationship has been correlated with the microstructure development

Voltage regulating circuit

NARCIS (Netherlands)

2005-01-01

A voltage regulating circuit comprising a rectifier (2) for receiving an AC voltage (Vmains) and for generating a rectified AC voltage (vrec), and a capacitor (3) connected in parallel with said rectified AC voltage for providing a DC voltage (VDC) over a load (5), characterized by a unidirectional

Continental Divide Trail

Data.gov (United States)

Earth Data Analysis Center, University of New Mexico — This shapefile was created to show the proximity of the Continental Divide to the Continental Divide National Scenic Trail in New Mexico. This work was done as part...

Current redistribution in resistor networks: Fat-tail statistics in regular and small-world networks.

Science.gov (United States)

Lehmann, Jörg; Bernasconi, Jakob

2017-03-01

The redistribution of electrical currents in resistor networks after single-bond failures is analyzed in terms of current-redistribution factors that are shown to depend only on the topology of the network and on the values of the bond resistances. We investigate the properties of these current-redistribution factors for regular network topologies (e.g., d-dimensional hypercubic lattices) as well as for small-world networks. In particular, we find that the statistics of the current redistribution factors exhibits a fat-tail behavior, which reflects the long-range nature of the current redistribution as determined by Kirchhoff's circuit laws.

Degradation of GaAs/AlGaAs Quantized Hall Resistors With Alloyed AuGe/Ni Contacts

OpenAIRE

Lee, Kevin C.

1998-01-01

Careful testing over a period of 6 years of a number of GaAs/AlGaAs quantized Hall resistors (QHR) made with alloyed AuGe/Ni contacts, both with and without passivating silicon nitride coatings, has resulted in the identification of important mechanisms responsible for degradation in the performance of the devices as resistance standards. Covering the contacts with a film, such as a low-temperature silicon nitride, that is impervious to humidity and other contaminants in the atmosphere preven...

Nanoelectronics «bottom – up»: current generation, generalized Ohm’s law, elastic resistors, conductivity modes, thermoelectricity

Directory of Open Access Journals (Sweden)

Юрій Олексійович Кругляк

2015-07-01

Full Text Available General questions of electronic conductivity, current generation with the use of electrochemical potentials and Fermi functions, elastic resistor model, ballistic and diffusion transport, conductivity modes, n- and p-conductors and graphene, formulation of the generalized Ohm’s law, thermoelectric phenomena of Seebeck and Peltier, quality indicators and thermoelectric optimization, ballistic and diffusive phonon heat current are discussed in the frame of the «bottom – up» approach of modern nanoelectronics

A new method for reducing DNL in nuclear ADCs using an interpolation technique

International Nuclear Information System (INIS)

Vaidya, P.P.; Gopalakrishnan, K.R.; Pethe, V.A.; Anjaneyulu, T.

1986-01-01

The paper describes a new method for reducing the DNL associated with nuclear ADCs. The method named the ''interpolation technique'' is utilized to derive the quantisation steps corresponding to the last n bits of the digital code by dividing quantisation steps due to higher significant bits of the DAC, using a chain of resistors. Using comparators, these quantisation steps are compared with the analog voltage to be digitized, which is applied as a voltage shift at both ends of this chain. The output states of the comparators define the n bit code. The errors due to offset voltages and bias currents of the comparators are statistically neutralized by changing the polarity of quantisation steps as well as the polarity of analog voltage (corresponding to last n bits) for alternate A/D conversion. The effect of averaging on the channel profile can be minimized. A 12 bit ADC was constructured using this technique which gives DNL of less than +-1% over most of the channels for conversion time of nearly 4.5 μs. Gatti's sliding scale technique can be implemented for further reduction of DNL. The interpolation technique has a promising potential of improving the resolution of existing 12 bit ADCs to 16 bit, without degrading the percentage DNL significantly. (orig.)

International Divider Walls

NARCIS (Netherlands)

Kruis, A.; Sneller, Lineke

2013-01-01

The subject of this teaching case is the Enterprise Resource Planning (ERP) system implementation at International Divider Walls, the world market leader in design, production, and sales of divider walls. The implementation in one of the divisions of this multinational company had been successful,

Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.

Science.gov (United States)

Niu, Gang; Kim, Hee-Dong; Roelofs, Robin; Perez, Eduardo; Schubert, Markus Andreas; Zaumseil, Peter; Costina, Ioan; Wenger, Christian

2016-06-17

With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.

Beyond voltage-gated ion channels: Voltage-operated membrane proteins and cellular processes.

Science.gov (United States)

Zhang, Jianping; Chen, Xingjuan; Xue, Yucong; Gamper, Nikita; Zhang, Xuan

2018-04-18

Voltage-gated ion channels were believed to be the only voltage-sensitive proteins in excitable (and some non-excitable) cells for a long time. Emerging evidence indicates that the voltage-operated model is shared by some other transmembrane proteins expressed in both excitable and non-excitable cells. In this review, we summarize current knowledge about voltage-operated proteins, which are not classic voltage-gated ion channels as well as the voltage-dependent processes in cells for which single voltage-sensitive proteins have yet to be identified. Particularly, we will focus on the following. (1) Voltage-sensitive phosphoinositide phosphatases (VSP) with four transmembrane segments homologous to the voltage sensor domain (VSD) of voltage-gated ion channels; VSPs are the first family of proteins, other than the voltage-gated ion channels, for which there is sufficient evidence for the existence of the VSD domain; (2) Voltage-gated proton channels comprising of a single voltage-sensing domain and lacking an identified pore domain; (3) G protein coupled receptors (GPCRs) that mediate the depolarization-evoked potentiation of Ca 2+ mobilization; (4) Plasma membrane (PM) depolarization-induced but Ca 2+ -independent exocytosis in neurons. (5) Voltage-dependent metabolism of phosphatidylinositol 4,5-bisphosphate (PtdIns[4,5]P 2 , PIP 2 ) in the PM. These recent discoveries expand our understanding of voltage-operated processes within cellular membranes. © 2018 Wiley Periodicals, Inc.

A CMOS frontend chip for implantable neural recording with wide voltage supply range

Science.gov (United States)

Jialin, Liu; Xu, Zhang; Xiaohui, Hu; Yatao, Guo; Peng, Li; Ming, Liu; Bin, Li; Hongda, Chen

2015-10-01

A design for a CMOS frontend integrated circuit (chip) for neural signal acquisition working at wide voltage supply range is presented in this paper. The chip consists of a preamplifier, a serial instrumental amplifier (IA) and a cyclic analog-to-digital converter (CADC). The capacitive-coupled and capacitive-feedback topology combined with MOS-bipolar pseudo-resistor element is adopted in the preamplifier to create a -3 dB upper cut-off frequency less than 1 Hz without using a ponderous discrete device. A dual-amplifier instrumental amplifier is used to provide a low output impedance interface for ADC as well as to boost the gain. The preamplifier and the serial instrumental amplifier together provide a midband gain of 45.8 dB and have an input-referred noise of 6.7 μVrms integrated from 1 Hz to 5 kHz. The ADC digitizes the amplified signal at 12-bits precision with a highest sampling rate of 130 kS/s. The measured effective number of bits (ENOB) of the ADC is 8.7 bits. The entire circuit draws 165 to 216 μA current from the supply voltage varied from 1.34 to 3.3 V. The prototype chip is fabricated in the 0.18-μm CMOS process and occupies an area of 1.23 mm2 (including pads). In-vitro recording was successfully carried out by the proposed frontend chip. Project supported by the National Natural Science Foundation of China (Nos. 61474107, 61372060, 61335010, 61275200, 61178051) and the Key Program of the Chinese Academy of Sciences (No. KJZD-EW-L11-01).

Increase in operation safety of high-current pulsed accelerators by means of nonlinear resistances

International Nuclear Information System (INIS)

Demidov, B.A.; Ivkin, M.V.; Petrov, V.A.; Fanchenko, S.D.

1975-01-01

A circuit for connecting a shaping line through a nonlinear resistor in a high-current pulsed accelerator is proposed and investigated experimentally. For experimental purposes standard resistors are used as nonlinear resistors, they are made in the form of cylinders 100 mm in dia and 60 mm long. The results obtained show that if two resistors are connected in series, the reduction in an initial potential is less than 5% at the logarithmic damping coefficient equal to 1.3. It is also shown that such a method allows elimination of the reverse pumpover of energy to the storage device for untimely actuation of a spark gap that results in the prolongation of the time of potential applying thereby it permits a substantial increase in the reliability of a high-voltage insulation [ru

18/20 T high magnetic field scanning tunneling microscope with fully low voltage operability, high current resolution, and large scale searching ability.

Science.gov (United States)

Li, Quanfeng; Wang, Qi; Hou, Yubin; Lu, Qingyou

2012-04-01

We present a home-built 18/20 T high magnetic field scanning tunneling microscope (STM) featuring fully low voltage (lower than ±15 V) operability in low temperatures, large scale searching ability, and 20 fA high current resolution (measured by using a 100 GOhm dummy resistor to replace the tip-sample junction) with a bandwidth of 3.03 kHz. To accomplish low voltage operation which is important in achieving high precision, low noise, and low interference with the strong magnetic field, the coarse approach is implemented with an inertial slider driven by the lateral bending of a piezoelectric scanner tube (PST) whose inner electrode is axially split into two for enhanced bending per volt. The PST can also drive the same sliding piece to inertial slide in the other bending direction (along the sample surface) of the PST, which realizes the large area searching ability. The STM head is housed in a three segment tubular chamber, which is detachable near the STM head for the convenience of sample and tip changes. Atomic resolution images of a graphite sample taken under 17.6 T and 18.0001 T are presented to show its performance. © 2012 American Institute of Physics

Stray voltage mitigation

Energy Technology Data Exchange (ETDEWEB)

Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

2008-04-09

This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

Comparison of Electrostatic Fins with Piezoelectric Impact Hammer Techniques to Extend Impulse Calibration Range of a Torsional Thrust Stand (Preprint)

Science.gov (United States)

2011-03-23

prac- tical max impulse to 1mNs. The newly developed Piezo - electric Impact Hammer (PIH) calibration system over- comes geometric limits of ESC...the fins to behave as part of an LRC circuit which results in voltage oscillations. By adding a resistor in series between the pulse generator and...series resistor as well as the effects of no loading on the pulse generator. III. PIEZOELECTRIC IMPACT HAMMER SYSTEM The second calibration method tested

Experimental Modeling of Monolithic Resistors for Silicon ICS with a Robust Optimizer-Driving Scheme

Directory of Open Access Journals (Sweden)

Philippe Leduc

2002-06-01

Full Text Available Today, an exhaustive library of models describing the electrical behavior of integrated passive components in the radio-frequency range is essential for the simulation and optimization of complex circuits. In this work, a preliminary study has been done on Tantalum Nitride (TaN resistors integrated on silicon, and this leads to a single p-type lumped-element circuit. An efficient extraction technique will be presented to provide a computer-driven optimizer with relevant initial model parameter values (the "guess-timate". The results show the unicity in most cases of the lumped element determination, which leads to a precise simulation of self-resonant frequencies.

Reliability of supply of switchgear for auxiliary low voltage in substations extra high voltage to high voltage

Directory of Open Access Journals (Sweden)

Perić Dragoslav M.

2015-01-01

Full Text Available Switchgear for auxiliary low voltage in substations (SS of extra high voltages (EHV to high voltage (HV - SS EHV/HV kV/kV is of special interest for the functioning of these important SS, as it provides a supply for system of protection and other vital functions of SS. The article addresses several characteristic examples involving MV lines with varying degrees of independence of their supply, and the possible application of direct transformation EHV/LV through special voltage transformers. Auxiliary sources such as inverters and diesel generators, which have limited power and expensive energy, are also used for the supply of switchgear for auxiliary low voltage. Corresponding reliability indices are calculated for all examples including mean expected annual engagement of diesel generators. The applicability of certain solutions of switchgear for auxiliary low voltage SS EHV/HV, taking into account their reliability, feasibility and cost-effectiveness is analyzed too. In particular, the analysis of applications of direct transformation EHV/LV for supply of switchgear for auxiliary low voltage, for both new and existing SS EHV/HV.

Charge-pump voltage converter

Science.gov (United States)

Brainard, John P [Albuquerque, NM; Christenson, Todd R [Albuquerque, NM

2009-11-03

A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

High voltage systems

International Nuclear Information System (INIS)

Martin, M.

1991-01-01

Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

Gentilly 2 divider plate replacement

International Nuclear Information System (INIS)

Forest, J.; Klisel, E.; McClellan, G.; Schnelder, W.

1995-01-01

The steam generators at the Gentilly 2 Nuclear Plant in operation since 1983 were built with primary divider plates of a bolted panel configuration. During a routine outage inspection, it was noted that two bolts had dislodged from the divider and were located lying in the primary head. Subsequent inspections revealed erosion damage to a substantial number of divider plate bolts and to a lesser extent, to the divider plate itself. After further inspection and repair the units were returned to operation, however, it was determined that a permanent replacement of the primary divider plates was going to be necessary. After evaluation of various options, it was decided that the panel type dividers would be replaced with a single piece floating design. The divider itself was to be of a one piece all-welded arrangement to be constructed from individual panels to be brought in through the manways. In view of the strength limitations of the bolted attachment of the upper seat bar to the tubesheet, a new welded seat bar was provided. To counteract erosion concerns, the new divider is fitted with erosion resistant inserts or weld buildup and with improved sealing features in order to minimize leakage and erosion. At an advanced stage in the design and manufacture of the components, the issue of divider strength during LOCA conditions came into focus. Analysis was performed to determine the strength and/or failure characteristics of the divider to a variety of small and large LOCA conditions. The paper describes the diagnosis of the original divider plates and the design, manufacture, field mobilization, installation and subsequent operation of the replacement divider plates. (author)

The Most Energy Efficient Way to Charge the Capacitor in an RC Circuit

Science.gov (United States)

Wang, Dake

2017-01-01

The voltage waveform that minimizes the energy loss in the resistance when charging the capacitor in a resistor-capacitor circuit is investigated using the calculus of variation. A linear voltage ramp gives the best efficiency, which means a constant current source should be used for charging. Comparison between constant current source and…

Widerstandsmessschaltung

OpenAIRE

Wallrapp, L.; Seitzer, D.

1992-01-01

A resistance/voltage converter for the generation of a voltage output signal inversely proportional to the value of a resistance to be measured comprises a reference voltage source, a first operational amplifier whose non-inverting input is connected to the reference voltage source and whose inverting input is connected to a first terminal of the resistance to be measured, whose second terminal is connected to a reference potential, a series circuit of a reference resistor and a further resis...

Charged particle accelerator

International Nuclear Information System (INIS)

Arakawa, Kazuo.

1969-01-01

An accelerator is disclosed having a device which permits the electrodes of an accelerator tube to be readily conditioned in an uncomplicated manner before commencing operation. In particle accelerators, it is necessary to condition the accelerator electrodes before a stable high voltage can be applied. Large current accelerators of the cockcroft-walton type require a complicated manual operation which entails applying to the electrodes a low voltage which is gradually increased to induce a vacuum discharge and then terminated. When the discharge attains an extremely low level, the voltage is again impressed and again raised to a high value in low current type accelerators, a high voltage power supply charges the electrodes once to induce discharge followed by reapplying the voltage when the vacuum discharge reaches a low level, according to which high voltage is automatically applied. This procedure, however, requires that the high voltage power supply be provided with a large internal resistance to limit the current to within several milliamps. The present invention connects a high voltage power supply and an accelerator tube through a discharge current limiting resistor wired in parallel with a switch. Initially, the switch is opened enabling the power supply to impress a voltage limited to a prescribed value by a suitably chosen resistor. Conditioning is effected by allowing the voltage between electrodes to increase and is followed by closing the switch through which high voltage is applied directly to the accelerator for operation. (K.J. Owens)

Low-Energy Real-Time OS Using Voltage Scheduling Algorithm for Variable Voltage Processors

OpenAIRE

Okuma, Takanori; Yasuura, Hiroto

2001-01-01

This paper presents a real-time OS based on $ mu $ITRON using proposed voltage scheduling algorithm for variable voltage processors which can vary supply voltage dynamically. The proposed voltage scheduling algorithms assign voltage level for each task dynamically in order to minimize energy consumption under timing constraints. Using the presented real-time OS, running tasks with low supply voltage leads to drastic energy reduction. In addition, the presented voltage scheduling algorithm is ...

Novel high-voltage power lateral MOSFET with adaptive buried electrodes

International Nuclear Information System (INIS)

Zhang Wen-Tong; Wu Li-Juan; Qiao Ming; Luo Xiao-Rong; Zhang Bo; Li Zhao-Ji

2012-01-01

A new high-voltage and low-specific on-resistance (R on,sp ) adaptive buried electrode (ABE) silicon-on-insulator (SOI) power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide (BOX) layer, the negative drain voltage V d is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than the electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field E I and the breakdown voltage (BV) of ABE SOI are 545 V/μm and −587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low R on,sp is obtained. Furthermore, the structure also alleviates the self-heating effect (SHE). The analytical model matches the simulation results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

ANALISA SISTEM KENDALI PUTARAN MOTOR DC MENGGUNAKAN SILICON CONTROLLED RECTIFIERS

Directory of Open Access Journals (Sweden)

M. Khairudin, Efendi, N Purwantiningsih,

2016-01-01

Full Text Available ABSTRAK Paper ini bertujuan untuk menganalisa rangkaian sistem kendali putaran motor menggunakan Silicon Controlled Rectifier (SCR atau Thyristor. Eksperimen sistem kendali putaran motor ini menggunakan dua rangkaian yang berbeda. Rangkaian pertama menggunakan dua sumber, yaitu sumber tegangan DC 12 v terhubung dengan motor universal secara seri dengan resistor dan SCR, sedangkan sumber tegangan DC variabel 0 sampai 1.5 v dihubung paralel dengan kapasitor dan resistor. Rangkaian kedua menggunakan satu sumber tegangan AC 5 v yang dihubungkan dengan saklar dan motor. Pada rangkaian kedua ini motor dihubungkan dengan potensio, SCR, dioda serta kapasitor yang dipasang paralel dengan sumber tegangan AC. Hasil eksperimen menunjukkan dalam rangkaian menggunakan sumber tegangan DC, motor DC akan berputar saat saklar S1 tertutup. Kondisi motor akan berputar lebih cepat ketika sumber tegangan variabel diatur lebih besar dari 0 v sehingga arus gate Ig lebih bear dari 400 mA. Adapun Eksperimen dengan sumber tegangan AC, motor akan berputar dengan menambahkan dioda D3 dan pengaturan kecepatan melalui potensio meter Rv sampai posisi maksimum. Kata kunci: analisa, motor DC, SCR, sistem kendali ABSTRACT The objective of this study is to analyse the circuit of DC motor control system using Silicon Controlled Rectifier (SCR or Thyristor. In this experiment the circuit of control system for the motor using two different circuits. The first circuit using two sources, the 12 v DC voltage is connected to universal motor and series with a resistor and SCR, while the DC variable voltage source of 0 to 1.5 v connected in parallel to the capacitor and resistor. The second circuit uses a single source of 5 V AC voltage connected to the switch and the motor. In the second circuit, the motor is connected to the potentio meter, SCR, diode and capacitor in parallel with the AC voltage source. The experimental results showed the circuit using a DC voltage source impacted the

Universal logic gates via liquid-electronic hybrid divider

KAUST Repository

Zhou, Bingpu

2012-01-01

We demonstrated two-input microdroplet-based universal logic gates using a liquid-electronic hybrid divider. All 16 Boolean logic functions have been realized by manipulating the applied voltages. The novel platform consists of a microfluidic chip with integrated microdroplet detectors and external electronic components. The microdroplet detectors act as the communication media for fluidic and electronic information exchange. The presence or absence of microdroplets at the detector translates into the binary signal 1 or 0. The embedded micro-mechanical pneumatically actuated valve (PAV), fabricated using the well-developed multilayer soft lithography technique, offers biocompatibility, flexibility and accuracy for the on-chip realization of different logic functions. The microfluidic chip can be scaled up to construct large-scale microfluidic logic computation. On the other hand, the microfluidic chip with a specific logic function can be applied to droplet-based chemical reactions for on-demand bio or chemical analysis. Our experimental results have presented an autonomously driven, precision-controlled microfluidic chip for chemical reactions based on the IF logic function. © 2012 The Royal Society of Chemistry.

Spectrum analysis of a voltage source converter due to semiconductor voltage drops

DEFF Research Database (Denmark)

Rasmussen, Tonny Wederberg; Eltouki, Mustafa

2017-01-01

It is known that power electronic voltage source converters are non-ideal. This paper presents a state-of-the-art review on the effect of semiconductor voltage drop on the output voltage spectrum, using single-phase H-bridge two-level converter topology with natural sampled pulse width modulation....... The paper describes the analysis of output voltage spectrum, when the semiconductor voltage drop is added. The results of the analysis of the spectral contribution including and excluding semiconductor voltage drop reveal a good agreement between the theoretical results, simulations and laboratory...

Development of a Compensation Scheme for a Measurement Voltage Transformer Using the Hysteresis Characteristics of a Core

Directory of Open Access Journals (Sweden)

Hyewon Lee

2015-04-01

Full Text Available This paper describes the design, evaluation, and implementation of a compensation scheme for a measurement voltage transformer (VT using the hysteresis characteristics of the core. The error of a VT is caused by the primary winding voltage and secondary winding voltage. The latter depends on the secondary current, whereas the former depends on the primary current, which is an aggregate of the exciting and secondary currents. The secondary current is obtained directly from the secondary voltage and is used to obtain the voltage across the secondary winding. For the primary current, the exciting current is decomposed into two components: core-loss and magnetizing currents. The magnetizing current is obtained by the flux-magnetizing current curve instead of the hysteresis loop to minimize the required loops for compensation. The core-loss current is obtained by dividing the primary induced voltage by the core-loss resistance. Finally, the estimated voltages across the primary and secondary windings are added to the measured secondary voltage for compensation. The scheme can significantly improve the accuracy of a VT. The results of the performance of compensator are shown in the experimental test. The accuracy of the measurement VT improves from 1.0C class to 0.1C class. The scheme can help to significantly reduce the required core cross section of a measurement VT in an electrical energy system.

A 1.7 MHz Chua's circuit using VMs and CF+s

OpenAIRE

Sánchez López, C

2012-01-01

In this paper, a high-frequency Chua's chaotic oscillator based on unity gain cells (UGCs) is introduced. Leveraging the internal buffers of the integrated circuit AD844, a voltage mirror (VM) and a positive current follower (CF+) are designed, taking into account the parasitic elements associated to each UGC. Afterwards, the behavior of the nonlinear resistor and of the grounded inductor are designed by using several VMs, CF+s, discrete capacitors and resistors. In this way, Chua's circuit i...

Manned Certification Tests of the Modernized MK 16 MOD 1

Science.gov (United States)

2013-11-01

three oxygen sensors in the breathing loop and add oxygen via a piezo -electric valve if oxygen partial pressure (PO2) drops below a designated...approved for use in the MK 16 requires that a 6 kΩ resistor be present (no tolerance given) for best 5 function of the sensor’s temperature...external 6.0 kΩ resistor was then inserted between the voltage source and the sensor connector and the secondary reading was noted. RESULTS A

Analisis Pengaturan Putaran Motor Satu Fasa dengan Parameter Frekuensi Menggunakan Power Simulator (PSIM)

OpenAIRE

Rasjid, Dwi Hadidjaja

2015-01-01

-The Setting of a single-phase motor rotation can be performed in various ways, such as by adjusting the frequency of the motor, the voltage, motor resistor or increasing the number of motor poles.By using astable oscillator circuit, setting a single-phase motor rotation frequency parameters can be done by setting the value variabel resistor. Thyristor trigger circuit can be used to control a single-phase motor rotation. Thyristor trigger phase angle changes, caused changes in the frequency, ...

High-voltage electrode optimization towards uniform surface treatment by a pulsed volume discharge

International Nuclear Information System (INIS)

Ponomarev, A V; Pedos, M S; Scherbinin, S V; Mamontov, Y I; Ponomarev, S V

2015-01-01

In this study, the shape and material of the high-voltage electrode of an atmospheric pressure plasma generation system were optimised. The research was performed with the goal of achieving maximum uniformity of plasma treatment of the surface of the low-voltage electrode with a diameter of 100 mm. In order to generate low-temperature plasma with the volume of roughly 1 cubic decimetre, a pulsed volume discharge was used initiated with a corona discharge. The uniformity of the plasma in the region of the low-voltage electrode was assessed using a system for measuring the distribution of discharge current density. The system's low-voltage electrode - collector - was a disc of 100 mm in diameter, the conducting surface of which was divided into 64 radially located segments of equal surface area. The current at each segment was registered by a high-speed measuring system controlled by an ARM™-based 32-bit microcontroller. To facilitate the interpretation of results obtained, a computer program was developed to visualise the results. The program provides a 3D image of the current density distribution on the surface of the low-voltage electrode. Based on the results obtained an optimum shape for a high-voltage electrode was determined. Uniformity of the distribution of discharge current density in relation to distance between electrodes was studied. It was proven that the level of non-uniformity of current density distribution depends on the size of the gap between electrodes. Experiments indicated that it is advantageous to use graphite felt VGN-6 (Russian abbreviation) as the material of the high-voltage electrode's emitting surface. (paper)

A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array.

Science.gov (United States)

Zackriya, Mohammed; Kittur, Harish M; Chin, Albert

2017-02-10

The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 μA due to both low-current RRAM device and circuit interaction, where a novel and simple scheme of a reference point by half selected cell and a differential amplifier (DA) were implemented in the circuit design.

Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

Science.gov (United States)

Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

2014-10-01

The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

Reversible thermal fusing model of carbon black current-limiting thermistors

International Nuclear Information System (INIS)

Martin, James E.; Heaney, Michael B.

2000-01-01

Composites of carbon black particles in polyethylene exhibit an unusually rapid increase in resistivity as the applied electric field is increased, making this material commercially useful as current-limiting thermistors, also known as automatically resettable fuses. In this application the composite is in series with the circuit it is protecting: at low applied voltages the circuit is the load, but at high applied voltages the composite becomes the load, limiting the current to the circuit. We present a simple model of this behavior in terms of a network of nonlinear resistors. Each resistor has a resistance that depends explicitly and reversibly on its instantaneous power dissipation. This model predicts that in the soft fusing, or current-limiting, regime, where the current through the composite decreases with increasing voltage, a platelike dissipation instability develops normal to the applied field, in agreement with experimental observations, which is solely due to fluctuations in the microstructure

Temporary over voltages in the high voltage networks

International Nuclear Information System (INIS)

Vukelja, Petar; Naumov, Radomir; Mrvic, Jovan; Minovski, Risto

2001-01-01

The paper treats the temporary over voltages that may arise in the high voltage networks as a result of: ground faults, loss of load, loss of one or two phases and switching operation. Based on the analysis, the measures for their limitation are proposed. (Original)

Voltage regulator for generator

Energy Technology Data Exchange (ETDEWEB)

Naoi, K

1989-01-17

It is an object of this invention to provide a voltage regulator for a generator charging a battery, wherein even if the ambient temperature at the voltage regulator rises abnormally high, possible thermal breakage of the semiconductor elements constituting the voltage regulator can be avoided. A feature of this invention is that the semiconductor elements can be protected from thermal breakage, even at an abnormal ambient temperature rise at the voltage regulator for the battery charging generator, by controlling a maximum conduction ratio of a power transistor in the voltage regulator in accordance with the temperature at the voltage regulator. This is achieved through a switching device connected in series to the field coil of the generator and adapted to be controlled in accordance with an output voltage of the generator and the ambient temperature at the voltage regulator. 6 figs.

Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.