Sample records for voltage rated switching

  1. Study and Realisation of Nyquist Rate Filters in Voltage Inverter Switch Technique


    Bharadhwaj, Harsha


    Low-sensitivity switched capacitor filters imitating 'R','L' and 'C' can be built by means of capacitances, ordinary switches and voltage inverter switches (VIS). These structures carry the inherent bilinear transformation of their doubly resistively terminated ladder reference filters. This one to one correspondence between the 's-domain' and the 'z-domain' results in the Nyquist criterion being the only limitation on the sampling frequency. This eliminates the necessity for oversampling and...

  2. Power grid current harmonics mitigation drawn on low voltage rated switching devices with effortless control

    Energy Technology Data Exchange (ETDEWEB)

    Marques, Hugo S.; Anunciada, Victor; Borges, Beatriz V. [Power Electronics Group, Instituto de Telecomunicacoes, Lisbon (Portugal); Instituto Superior Tecnico - Universidade Tecnica de Lisboa, Lisbon (Portugal)


    The great majority of the existing hybrid active power filter solutions is normally focused in 3{phi} systems and, in general, concentrates its domain of application in specific loads with deterministic behavior. Because common use grids do not exhibit these characteristics, it is mandatory to develop solutions for more generic scenarios, encouraging the use of less classical hybrid solutions. In fact, due to the widely use of switch mode converters in a great variety of consumer electronics, the problematic of mains current harmonic mitigation is no longer an exclusive matter of 3{phi} systems. The contribution of this paper is to present a shunt hybrid active power filter topology, initially conceived to work in 1{phi} domestic grids, able to operate the inverter at a voltage rate that can be lower than 10% of the mains voltage magnitude, even under nonspecific working conditions. In addition, the results shown in this paper demonstrate that this topology can, without lack of generality, be suitable to medium voltage (1{phi} or 3{phi}) systems. A new control approach for the proposed topology is discussed in this paper. The control method exhibits an extremely simple architecture requiring single point current sensing only, with no need for any kind of reference. Its practical implementation can be fulfilled by using very few, common use, operational amplifiers. The principle of operation, design criteria, simulation predictions and experimental results are presented and discussed. (author)

  3. MOS switched-capacitor filters using voltage inverter switches (United States)

    Fettweis, A.; Pandel, J.; Herbst, D.; Hoefflinger, B.; Schweer, R.


    The paper examines MOS switched-capacitor filters which use voltage inverter switches. Low-sensitivity switched-capacitor filters imitating LC and LC/unit-element structures can be built by means of capacitances, ordinary switches, and voltage inverter switches; the latter are simply realizable by electronic means. It was found that there are no restrictions on the operating rate (other than those resulting from the Nyquist theorem), or on the location of the attenuation poles; it was also found that the effects of parasitic capacitances can be overcome by proper design techniques. The experimental results of an integrated third-order low-pass filter are in agreement with theory.

  4. Reduction in write error rate of voltage-driven dynamic magnetization switching by improving thermal stability factor (United States)

    Shiota, Yoichi; Nozaki, Takayuki; Tamaru, Shingo; Yakushiji, Kay; Kubota, Hitoshi; Fukushima, Akio; Yuasa, Shinji; Suzuki, Yoshishige


    In this study, we demonstrate voltage-driven dynamic magnetization switching for the write error rate (WER) of the order of 10-5. The largest voltage effect on the perpendicular magnetic anisotropy in Ta/(CoxFe100-x)80B20/MgO structure (x = 0, 10, 31, 51) is obtained for x = 31 after annealing at 250 °C. Based on investigations using perpendicularly magnetized magnetic tunnel junctions that have different (Co31Fe69)80B20 free layer thicknesses, we demonstrate that the improvement in the thermal stability factor is important to reduce the WER. Our results will facilitate the design of highly reliable, voltage-torque, magnetoresistive random access memory.

  5. High voltage MOSFET switching circuit (United States)

    McEwan, Thomas E.


    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  6. Transient voltage sharing in series-coupled high voltage switches

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    Editorial Office


    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  7. High-voltage, high-current, solid-state closing switch

    Energy Technology Data Exchange (ETDEWEB)

    Focia, Ronald Jeffrey


    A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

  8. Optically triggered high voltage switch network and method for switching a high voltage (United States)

    El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.


    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  9. High voltage switches having one or more floating conductor layers (United States)

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson


    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  10. A new Zero-Voltage-Transition PWM switching cell

    Energy Technology Data Exchange (ETDEWEB)

    Grigore, V. [Electronics and Telecommunications Faculty `Politebuica` University Bucharest (Romania); Kyyrae, J. [Helsinki University of Technology, Otaniemi (Finland): Institute of Intelligent Power Electronics


    In this paper a new Zero-Voltage-Transition (ZVT) PWM switching cell is presented. The proposed switching cell is composed of the normal hard-switched PWM cell (consisting of one active switch and one passive switch), plus an auxiliary circuit (consisting of one active switch and some reactive components). The auxiliary circuit is inactive during the ON and OFF intervals of the switches in the normal PWM switch. However, the transitions between the two states are controlled by the auxiliary circuit. Prior to turn-on, the voltage across the active switch in the PWM cell is forced to zero, thus the turn-on losses of the active switch are practically eliminated. At turn-off the auxiliary circuit behaves like a non-dissipative passive snubber reducing the turn-off losses to a great extent. Zero-Voltage-Transition switching technique almost eliminates switching losses. The active switch operates under ZVT conditions, the passive switch (diode) has a controlled reverse recovery, and the switch in the auxiliary circuit operates under Zero-Current-Switching (ZCS) conditions. (orig.) 6 refs.

  11. Operating stability of a self-breakdown spark-gap frequency switch rated at a voltage of 300 kV and a switched power of up to 450 J (United States)

    Koval'chuk, B. M.; Korolev, Yu. D.; Kumpyak, E. V.; Frants, O. B.; Shemyakin, I. A.


    A test bench for studying two-electrode spark gaps rated at a voltage of 300 kV and a pulse repetition rate of up to 10 Hz and operating in air at elevated pressure. The typical time of pulse charging of a capacitive storage in the bench equals about 100 μs. The object of investigation is a spark gap the operating stability of which at a level of 10% of the rate voltage is achieved by initiating a corona discharge at the prebreakdown stage. It is shown that unstable operation is due to the accumulation of nitrogen oxides in the gap. To maintain the oxide content at an acceptable level, continuous gas purging is applied and necessary gas flow rates are estimated.

  12. Low-voltage switched-current delta-sigma modulator (United States)

    Tan, Nianxiong; Eriksson, Sven


    This paper presents the design of a fully differential switched-current delta-sigma modulator using a single 3.3-V power-supply voltage. At system level, we tailor the modulator structure considering the similarity and difference of switched-capacitor and switched-current realizations. At circuit level, we propose a new switched-current memory cell and integrator with improved common mode feedback, without which low power-supply-voltage operation would not be possible. The whole modulator was implemented in a 0.8- micron double-metal digital CMOS process. It occupies an active area of 0.53 x 0.48 mm(sup 2) and consumes a current of 0.6 mA from a single 3.3-V power supply. The measured dynamic range is over 10 b.

  13. Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

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    Deepak Bansal


    Full Text Available RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

  14. Ultra-Low Voltage Class AB Switched Current Memory Cell

    DEFF Research Database (Denmark)

    Igor, Mucha


    This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

  15. High voltage switch triggered by a laser-photocathode subsystem (United States)

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.


    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  16. Determination of appropriate DC voltage for switched mode power supply (SMPS) loads (United States)

    Setiawan, Eko Adhi; Setiawan, Aiman; Purnomo, Andri; Djamal, Muchlishah Hadi


    Nowadays, most of modern and efficient household electronic devices operated based on Switched Mode Power Supply (SMPS) technology which convert AC voltage from the grid to DC voltage. Based on theory and experiment, SMPS loads could be supplied by DC voltage. However, the DC voltage rating to energize electronic home appliances is not standardized yet. This paper proposed certain method to determine appropriate DC voltage, and investigated comparison of SMPS power consumption which is supplied from AC and DC voltage. To determine the appropriate DC voltage, lux value of several lamps which have same specification energized by using AC voltage and the results is using as reference. Then, the lamps were supplied by various DC voltage to obtain the trends of the lux value to the applied DC voltage. After that, by using the trends and the reference lux value, the appropriate DC voltage can be determined. Furthermore, the power consumption on home appliances such as mobile phone, laptop and personal computer by using AC voltage and the appropriate DC voltage were conducted. The results show that the total power consumption of AC system is higher than DC system. The total power (apparent power) consumed by the lamp, mobile phone and personal computer which operated in 220 VAC were 6.93 VA, 34.31 VA and 105.85 VA respectively. On the other hand, under 277 VDC the load consumption were 5.83 W, 19.11 W and 74.46 W respectively.

  17. Low Voltage Current Mode Switched-Current-Mirror Mixer

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    Chunhua Wang


    Full Text Available A new CMOS active mixer topology can operate at 1 V supply voltage by use of SCM (switched currentmirror. Such current-mode mixer requires less voltage headroom with good linearization. Mixing is achieved with four improved current mirrors, which are alternatively activated. For ideal switching, the operation is equivalent to a conventional active mixer. This paper analyzes the performance of the SCM mixer, in comparison with the conventional mixer, demonstrating competitive performance at a lower supply voltage. Moreover, the new mixer’s die, without any passive components, is very small, and the conversion gain is easy to adjust. An experimental prototype was designed and simulated in standard chartered 0.18μm RF CMOS Process with Spectre in Cadence Design Systems. Experimental results show satisfactory mixer performance at 2.4 GHz.

  18. Hybrid zero-voltage switching (ZVS) control for power inverters (United States)

    Amirahmadi, Ahmadreza; Hu, Haibing; Batarseh, Issa


    A power inverter combination includes a half-bridge power inverter including first and second semiconductor power switches receiving input power having an intermediate node therebetween providing an inductor current through an inductor. A controller includes input comparison circuitry receiving the inductor current having outputs coupled to first inputs of pulse width modulation (PWM) generation circuitry, and a predictive control block having an output coupled to second inputs of the PWM generation circuitry. The predictive control block is coupled to receive a measure of Vin and an output voltage at a grid connection point. A memory stores a current control algorithm configured for resetting a PWM period for a switching signal applied to control nodes of the first and second power switch whenever the inductor current reaches a predetermined upper limit or a predetermined lower limit.


    Directory of Open Access Journals (Sweden)

    T. M. Lazimov


    Full Text Available The paper proposes some additional conditions for high-voltage circuit-breaker selection keeping in mind coordination of the switched over-voltages and voltages induced in secondary circuits with their permissible values.

  20. E-beam high voltage switching power supply (United States)

    Shimer, Daniel W.; Lange, Arnold C.


    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

  1. A Combined Thermo-Electrostatic MEMS-Based Switch with Low Actuation Voltage

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    Parisa MAHMOUDI


    Full Text Available Requirement of voltage up-converters due to high pull-in voltage is one of the main problems by merely electrostatic actuated MEMS-based Switches. Thermally actuated switches are another alternatives but with very high power dissipation. In this paper a low voltage switch is demonstrated, which uses a combined thermo-electrostatic actuator. The switch can be integrated with standard CMOS circuits without any up-converters. Thermally power dissipation for the switch is lower than just thermal actuators. The switching time is about 70 ms and the maximal temperature of thermal actuator is lower than 150 oC which cannot cause any longtime damage.

  2. Fast switching thyristor applied in nanosecond-pulse high-voltage generator with closed transformer core. (United States)

    Li, Lee; Bao, Chaobing; Feng, Xibo; Liu, Yunlong; Fochan, Lin


    For a compact and reliable nanosecond-pulse high-voltage generator (NPHVG), the specification parameter selection and potential usage of fast controllable state-solid switches have an important bearing on the optimal design. The NPHVG with closed transformer core and fast switching thyristor (FST) was studied in this paper. According to the analysis of T-type circuit, the expressions for the voltages and currents of the primary and secondary windings on the transformer core of NPHVG were deduced, and the theoretical maximum analysis was performed. For NPHVG, the rise-rate of turn-on current (di/dt) across a FST may exceed its transient rating. Both mean and maximum values of di/dt were determined by the leakage inductances of the transformer, and the difference is 1.57 times. The optimum winding ratio is helpful to getting higher voltage output with lower specification FST, especially when the primary and secondary capacitances have been established. The oscillation period analysis can be effectively used to estimate the equivalent leakage inductance. When the core saturation effect was considered, the maximum di/dt estimated from the oscillating period of the primary current is more accurate than one from the oscillating period of the secondary voltage. Although increasing the leakage inductance of NPHVG can decrease di/dt across FST, it may reduce the output peak voltage of the NPHVG.

  3. A Voltage Doubler Circuit to Extend the Soft-switching Range of Dual Active Bridge Converters

    DEFF Research Database (Denmark)

    Qin, Zian; Shen, Yanfeng; Wang, Huai


    A voltage doubler circuit is realized to extend the soft-switching range of Dual Active Bridge (DAB) converters. No extra hardware is added to the DAB to form this circuit, since it is composed of the dc blocking capacitor and the low side full bridge converter, which already exist in DAB....... With the voltage doubler, the DAB converter can achieve soft switching and high efficiency when the low side dc voltage is close to 2 pu (1 pu is the high side dc voltage divided by the transformer turn ratio), which can be realized only when the low side dc voltage is close to 1 pu by using the conventional phase...... shift modulation in DAB. Thus the soft switching range is extended. The soft switching boundary conditions are derived. A map to show the soft switching or hard switching in the full load and voltage range is obtained. The feasibility and effectiveness of the proposed method is finally verified...

  4. Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

    Energy Technology Data Exchange (ETDEWEB)

    She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui; Zhang, Di; Sommerer, Timothy John; Bray, James William


    A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of the one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.

  5. Voltage controlled Bi-mode resistive switching effects in MnO2 based devices (United States)

    Hu, P.; Wu, S. X.; Wang, G. L.; Li, H. W.; Li, D.; Li, S. W.


    In this paper, the voltage induced bi-mode resistive switching behavior of an MnO2 thin film based device was studied. The device showed prominent bipolar resistive switching behavior with good reproducibility and high endurance. In addition, complementary resistive switching characteristics can be observed by extending the voltage bias during voltage sweep operations. The electrical measurement data and fitting results indicate that the oxygen vacancies act as defects to form a conductive path, which is connective or disrupted to realize a low resistive state or a high resistive state. Changing the sweep voltage can tune the oxygen vacancies distribution, which will achieve complementary resistive switching.

  6. Low pull-in voltage electrostatic MEMS switch using liquid dielectric

    KAUST Repository

    Zidan, Mohammed A.


    In this paper, we present an electrostatic MEMS switch with liquids as dielectric to reduce the actuation voltage. The concept is verified by simulating a lateral dual gate switch, where the required pull-in voltage is reduced by more than 8 times after using water as a dielectric, to become as low as 5.36V. The proposed switch is simulated using COMSOL multiphysics using various liquid volumes to study their effect on the switching performance. Finally, we propose the usage of the lateral switch as a single switch XOR logic gate.

  7. Harmonic Analysis and Mitigation of Low- Frequency Switching Voltage Source Inverter with Auxiliary VSI

    DEFF Research Database (Denmark)

    Bai, Haofeng; Wang, Xiongfei; Blaabjerg, Frede


    The output currents of high-power Voltage Source Inverters (VSIs) are distorted by the switching harmonics and the background harmonics in the grid voltage. This paper presents an active harmonic filtering scheme for high-power, low-frequency switching VSIs with an additional auxiliary VSI...

  8. High voltage conversion ratio, switched C & L cells, step-down DC-DC converter

    DEFF Research Database (Denmark)

    Pelan, Ovidiu; Muntean, Nicolae; Cornea, Octavian


    The paper presents a high voltage conversion ratio DC-DC step-down topology obtained from a classical buck converter associated with an input switched-capacitor cell and an output switched-inductor cell. Analytical descriptions, the voltage and current limits of the main components are synthesize...

  9. Zero voltage switching driver and flyback transformer for generation of atmospheric pressure plasma jet (United States)

    Zin, Rosnah Mohd; Soon, Chin Fhong; Sani, Mohd Zuhri Ab; Rizon, Elfa Rizan; Tee, Kian Sek; Ahmad, Mohd Khairul; Ahmad, Nabihah@Nornabihah; Jubadi, Warsuzarina Mat; Nayan, Nafarizal


    There are increasing interests in the application of cold atmospheric plasma device for the application in surface science and medical field. Numerous studies focused on the effects of plasma emission onto living organisms. This report presents the application of a power driver circuit for induction of cold atmospheric plasma (CAP). The system consists of a resonant inverter of Zero Voltage Switching (ZVS) circuit powered by a 12Vdc input voltage which is coupled to a flyback transformer in generation of high voltage up to 24.5 kV. The output voltage from the ZVS driver and flyback transformer to the plasma torch (quartz tube) was determined using Falstad circuit simulation. The simulation on the waveforms generated from the ZVS circuit correlated well with the actual voltage measurement at the output of the ZVS circuit. The peak voltage dropped across a parallel capacitor coupled to the flyback transformer is approximately 36 V. The atmospheric pressure plasma jet (APPJ) purged with Argon gas at a flow rate of 50 l/min was exposed to a leaf for 5 seconds. This created pin holes in the exposed area of the leaf indicating high temperature was induced at the focused spot of the plasma. An atmospheric pressure plasma jet (APPJ) system has been developed for with potential application in destructive medicine.

  10. Analysis of bi-directional piezoelectric-based converters for zero-voltage switching operation

    DEFF Research Database (Denmark)

    Ekhtiari, Marzieh; Zhang, Zhe; Andersen, Michael A. E.


    -directional piezoelectric power converter is a difficult task. However, the analysis in this work will be convenient for overcoming this challenge. The analysis defines the zero-voltage region indicating the operating points whether or not soft switching can be met over the switching frequency and load range. For the first...... time, a comprehensive analysis is provided, which can be used as a design guideline for applying control techniques in order to drive switches in piezoelectric transformer-based converters. This study further conveys the proposed method to the region where all the switches can obtain soft switching......This paper deals with a thorough analysis of zerovoltage switching especially for bi-directional, inductorless, piezoelectric transformer-based switch-mode power supplies with a half-bridge topology. Practically, obtaining zero-voltage switching for all of the switches in a bi...

  11. Medium voltage SF6 switch rooms with switch breakers; Cubiculos de media tensao em SF6 com disjuntores

    Energy Technology Data Exchange (ETDEWEB)

    Matias, Marcos [Schneider Electric Brasil, Sao Paulo, SP (Brazil)


    This paper describes the technology using SF6 as breaking gas and the application in medium and high voltage switch rooms. The paper also describes the metal clad panel, the ring main unit, the medium voltage, and the panel saw and circuit breakers with SF6.

  12. Four-Switch Three-Phase PMSM Converter with Output Voltage Balance and DC-Link Voltage Offset Suppression

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    Fadil Hicham


    Full Text Available High power quality, efficiency, complexity, size, cost effectiveness and switching losses of the direct current to alternating current (DC–AC conversion system are crucial aspects in industrial applications. Therefore, the four-switch three-phase inverter (4S3P has been proposed as an innovative inverter design. However, this topology has been known to have many performance limitations in the low-frequency region, because of the generation of an unbalanced voltage leading to an unbalanced current due to the fluctuation and offset of the centre tap voltage of the DC-link capacitors. Those drawbacks are investigated and solved in this paper in order to provide pure sinusoidal output voltages. The generated output voltages are controlled using proportional-integral (PI controllers to follow the desired voltages. Furthermore, the DC-link capacitor voltage offset is mitigated by subtracting the direct component from the control reference voltage using low pass filters, where this direct voltage component provides the direct current component which leads to DC-link capacitor voltage divergence. A simulation model and experimental setup are used to validate the proposed concept. Many simulation and experimental results are carried out to show the effectiveness of the proposed control scheme.

  13. Parameterized Analysis of Zero Voltage Switching in Resonant Converters for Optimal Electrode Layout of Piezoelectric Transformers

    DEFF Research Database (Denmark)

    Meyer, Kaspar Sinding; Andersen, Michael Andreas E.; Jensen, Flemming


    Ring shaped PTs (Piezoelectric Transformers) are an attractive alternative to magnetics in power converters. The achievable energy efficiency is 98% and the power density is up to 30W/cm3. Additionally power supplies based on PTs display low levels of conducted and radiated EMI due to power...... conversion based on the piezoelectric effect. Rooted in the physics of this effect, both the in- and output terminal of a PT has a noticeable parasitic capacitance. In a common half-bridge power stage without any supporting magnetic components, the input parasitic capacitance can lead to hard switching...... losses that are in the range of the actual power rating of a specific PT. In this paper it is demonstrated how the electrode layout of a PT can be designed to enable ZVS (Zero Voltage Switching). This optimization is made simple with a novel set of accurate and simple symbolic equations which relates ZVS...


    Directory of Open Access Journals (Sweden)

    Mustafa SÖNMEZ


    Full Text Available Class-E amplifier consist of a switching device (BJT or FET and a rezonant circuit. The power of amplifier depends on current and supply voltage of the transistor. The breakdown voltage of the transistor is increased to the maximum level in order to increase the power of the amplifier. Because of increasing the current increases the reverse induction, the reverse voltage creates a problem for the transistor. In this work, the increased breakdown voltage transistor Configuration is applied to class-E power amplifiers. Therefore, the reverse voltage problem is solved and supply voltage.

  15. SEMICONDUCTOR DEVICES: A novel high voltage start up circuit for an integrated switched mode power supply (United States)

    Hao, Hu; Xingbi, Chen


    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.

  16. 47 CFR 17.54 - Rated lamp voltage. (United States)


    ... 47 Telecommunication 1 2010-10-01 2010-10-01 false Rated lamp voltage. 17.54 Section 17.54... voltage. To insure the necessary lumen output by obstruction lights, the rated voltage of incandescent lamps used shall correspond to be within 3 percent higher than the voltage across the lamp socket during...

  17. A Component-Reduced Zero-Voltage Switching Three-Level DC-DC Converter

    DEFF Research Database (Denmark)

    Qin, Zian; Pang, Ying; Wang, Huai


    The basic Zero-Voltage Switching (ZVS) three-level DC-DC converter has one clamping capacitor to realize the ZVS of the switches, and two clamping diodes to clamp the voltage of the clamping capacitor. In order to reduce the reverse recovery loss of the diode as well as its cost, this paper...... proposes to remove one of the clamping diodes in basic ZVS three-level DC-DC converter. With less components, the proposed converter can still have a stable clamping capacitor voltage, which is clamped at half of the dc link voltage. Moreover, the ZVS performance will be influenced by removing the clamping...


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    Mustafa SÖNMEZ


    Full Text Available The electrical parameters of the transistor must be taken into account in the designing of electronic circuit. One parameter, VCBO, is one of the most important parameter for the designer. Using transistor which has the breakdown voltage of 50 V, it is not possible to obtain 80 V pulse output since the output voltage can not exceed the supply voltage. In this work, a new method is presented to obtain output voltage bigger than supply voltage by using more than one transistor.

  19. Low Actuation Voltage RF MEMS Switch Using Varying Section Composite Fixed-Fixed Beam

    Directory of Open Access Journals (Sweden)

    M. Manivannan


    Full Text Available The present authors have earlier reported the employment of varying section fixed-fixed beam for achieving lower pull-in voltage with marginal fall in restoring force. Reducing Young’s modulus also reduces the pull-in voltage but with lesser degree of reduction in restoring force. Composite beams are ideal alternatives to achieve decreased Young’s modulus. Hence new varying section composite fixed-fixed beam type RF MEMS switch has been proposed. The main advantage of this RF MEMS switch is that lower pull-in voltages can be achieved with marginal fall in stiction immunity. Spring constant of the proposed switch has been obtained using simulation studies and it has been shown that the spring constant and therefore the pull-in voltage (Vpi can be considerably reduced with the proposed switch. Simulation studies conducted on the proposed switch clearly demonstrate that the pull-in voltage can be reduced by 31.17% when compared to the varying section monolayer polysilicon fixed-fixed beam. Further this approach enables the designer to have more freedom to design lower pull-in voltage switches with improved stiction immunity.

  20. Development of A Maintenance Device for Bus-bar PT Voltage Air Switch

    Directory of Open Access Journals (Sweden)

    Zhang Xiang


    Full Text Available When PT breaks down, it takes long time of switching operation before maintenance, which seriously delays the restoration time. Based on the principle of multiple circuit, a live replacement maintenance device for PT voltage air switch is proposed. The following aspects are involved in the design of the device: the principle of device, component selection, device’s assembly and operation process. Through functional test in simulation substation and on-site installation, it is proved that the failed air switch can be lively replaced by the device without switching operation, which greatly reduces the risk on power grid caused by such faulted air switch.

  1. Systems and methods for switched-inductor integrated voltage regulators

    Energy Technology Data Exchange (ETDEWEB)

    Shepard, Kenneth L.; Sturcken, Noah Andrew


    Power controller includes an output terminal having an output voltage, at least one clock generator to generate a plurality of clock signals and a plurality of hardware phases. Each hardware phase is coupled to the at least one clock generator and the output terminal and includes a comparator. Each hardware phase is configured to receive a corresponding one of the plurality of clock signals and a reference voltage, combine the corresponding clock signal and the reference voltage to produce a reference input, generate a feedback voltage based on the output voltage, compare the reference input and the feedback voltage using the comparator and provide a comparator output to the output terminal, whereby the comparator output determines a duty cycle of the power controller. An integrated circuit including the power controller is also provided.

  2. Voltage-Balancing Method for Modular Multilevel Converters Switched at Grid Frequency

    DEFF Research Database (Denmark)

    Deng, Fujin; Chen, Zhe


    The modular multilevel converter (MMC) becomes attractive for high-voltage and high-power applications due to its high modularity, availability, and power quality. The voltage balance issue of capacitors is very important in the MMC, and the balancing of the capacitor voltage is increasingly...... difficult as the switching frequency is reduced. In this paper, a voltage-balancing method is proposed for the MMC switched at grid frequency with reduced losses and does not rely on the arm current. By assigning the low-frequency pulses with different pulse widths, the capacitor charge transfer in the MMC...... can be controlled for keeping the capacitor voltage balancing in the MMC. Simulations and experimental studies of the MMC are conducted, and the results confirm the effectiveness of the proposed capacitor voltage-balancing method....

  3. Investigating Enhancement Mode Gallium Nitride Power FETs in High Voltage, High Frequency Soft Switching Converters

    DEFF Research Database (Denmark)

    Nour, Yasser; Knott, Arnold; Jørgensen, Ivan Harald Holger


    of using enhancement mode gallium nitride switches to form a 50V quasi-square-wave zero-voltage-switching buck converter running at 2-6 MHz under full load. The designed converter achieved 83% efficiency converting 50V input voltage to 12.2V at 9W load.......An increased attention has been detected to develop smaller and lighter high voltage power converters in the range of 50V to 400V domain. The main applications for these converters are mainly focused for Power over Ethernet (PoE), LED lighting and AC adapters. This work will discuss a study...

  4. Investigating Enhancement Mode Gallium Nitride Power FETs in High Voltage, High Frequency Soft Switching Converters

    DEFF Research Database (Denmark)

    Nour, Yasser; Knott, Arnold; Jørgensen, Ivan Harald Holger


    An increased attention has been detected to develop smaller and lighter high voltage power converters in the range of 50V to 400V domain. The main applications for these converters are mainly focused for Power over Ethernet (PoE), LED lighting and AC adapters. This work will discuss a study of us...... of using enhancement mode gallium nitride switches to form a 50V quasi-square-wave zero-voltage-switching buck converter running at 2-6 MHz under full load. The designed converter achieved 83% efficiency converting 50V input voltage to 12.2V at 9W load....

  5. A Novel Transformerless DC–DC Converters With High Step-Up Voltage Gain And Low Voltage Stress On The Switch

    Directory of Open Access Journals (Sweden)

    hossein ajdarfaeghi


    Full Text Available In this paper, a single switch transformerless high step up dc-dc converter with low voltage stress on the switch is proposed. In the proposed converter only one switch is used which makes the control scheme simple as well as reducing the switching power loss. The voltage gain of the proposed converter is higher than the conventional boost converter and buck boost converter and Proposed converter works in wide rang than conventional converters. The proposed converter has low voltage stress on the switch which makes reducing the switching power loss. The proposed converter can be operated in the continuous conduction mode (CCM and the discontinuous conduction mode (DCM. In this paper, different operation modes of the proposed converter, calculation of the voltage gain, the currents that flow through the components, efficiency and capacitors voltage ripple are presented. To verify the operation of the proposed converter, simulation results via PSCAD software and experimental results are provided.

  6. Design of RF MEMS Switch with High Stability Effect at the Low Actuation Voltage

    Directory of Open Access Journals (Sweden)

    Bandana MISHRA


    Full Text Available MEMS switches are one of the most promising future micro-machined products that have attracted numerous research efforts in recent years. This paper presents an innovative design of RF MEMS switch, with low actuation voltage (VT, improved mechanical stability and reduced stiction. The proposed switch is fabricated on a coplanar waveguide (CPW & actuated by electrostatic force. The mechanical and electrical performance of the switch has been tested. The simulation results show that the actuation voltage can be reduced by using serpentine folded spring, and improved mechanical stability and reduced stiction can be achieved by using a hydrophobic material with high Young’s modulus as insulator in between top and bottom electrode. The measured pull-in voltage is 4 V.

  7. Voltage-Driven Magnetization Switching and Spin Pumping in Weyl Semimetals (United States)

    Kurebayashi, Daichi; Nomura, Kentaro


    We demonstrate electrical magnetization switching and spin pumping in magnetically doped Weyl semimetals. The Weyl semimetal is a three-dimensional gapless topological material, known to have nontrivial coupling between the charge and the magnetization due to the chiral anomaly. By solving the Landau-Lifshitz-Gilbert equation for a multilayer structure of a Weyl semimetal, an insulator and a metal while taking the charge-magnetization coupling into account, magnetization dynamics is analyzed. It is shown that the magnetization dynamics can be driven by the electric voltage. Consequently, switching of the magnetization with a pulsed electric voltage can be achieved, as well as precession motion with an applied oscillating electric voltage. The effect requires only a short voltage pulse and may therefore be energetically favorable for us in spintronics devices compared to conventional spin-transfer torque switching.

  8. The use of commercial thyristors in repetitive high voltage switching devices for plasma sources (United States)

    Bac, J.; Reess, T.; Pecastaing, L.; Paillol, J.; Domens, P.


    This paper presents a commercial high voltage thyristor used as a switch allowing a tank capacitor to discharge in a load. In classical high power pulse technology applications the output voltage pulse has to be characterized mainly by its crest value, its rise-time, the period the thyristor is held in the on-state and the fall-time. These parameters are studied as a function of the power circuit and of the trigger circuit. The thyristor presents two behaviours: the main current is either higher or lower than the latching current. The “low current” behaviour is extensively investigated as it allows repetitive operation of the device. Two pulse power applications triggering electrical discharges are presented. Each one necessitates a specific pulsed power supply using series thyristor stacks or Marx structures. The first pulsed source delivers negative pulses with a crest voltage VoM=-35 kV, a turn on capability of Tr=90 ns and a repetition rate F=900 Hz. The second is built using Marx structure and is characterized by VoM=60 kV, Tr=250 ns, F=900 Hz.

  9. Ultra Low Voltage Class AB Switched Current Memory Cells Based on Floating Gate Transistors

    DEFF Research Database (Denmark)

    Mucha, Igor


    A with a supply voltage down to 1 V, and relatively small device dimensions. In spite of the relatively large signal processing range, the class AB operation of the cell enabled a very low quiescent current consumption, 1 mu A in this design, resulting in a very high current efficiency and effective power......A proposal for a class AB switched current memory cell, suitable for ultra-low-voltage applications is presented. The proposal employs transistors with floating gates, allowing to build analog building blocks for ultralow supply voltage operation also in CMOS processes with high threshold voltages...... current memory cells were designed using a CMOS process with threshold voltages V-T0n = \\V-T0p\\ = 0.9 V for the n- and p-channel devices. Both hand calculations and PSPICE simulations showed that the designed example switched current memory cell allowed a maximum signal range better than +/-18 mu...

  10. Optimization of Contact Force and Pull-in Voltage for Series based MEMS Switch

    Directory of Open Access Journals (Sweden)

    Abhijeet KSHIRSAGAR


    Full Text Available Cantilever based metal-to-metal contact type MEMS series switch has many applications namely in RF MEMS, Power MEMS etc. A typical MEMS switch consists of a cantilever as actuating element to make the contact between the two metal terminals of the switch. The cantilever is pulled down by applying a pull-in voltage to the control electrode that is located below the middle portion of the cantilever while only the tip portion of the cantilever makes contact between the two terminals. Detailed analysis of bending of the cantilever for different pull-in voltages reveals some interesting facts. At low pull-in voltage the cantilever tip barely touches the two terminals, thus resulting in very less contact area. To increase contact area a very high pull-in voltage is applied, but it lifts the tip from the free end due to concave curving of the cantilever in the middle region of the cantilever where the electrode is located. Again it results in less contact area. Furthermore, the high pull-in voltage produces large stress at the base of the cantilever close to the anchor. Therefore, an optimum, pull-in voltage must exist at which the concave curving is eliminated and contact area is maximum. In this paper authors report the finding of optimum contact force and pull-in voltage.

  11. Phase diagrams and switching of voltage and magnetic field in dilute magnetic semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Escobedo, R. [Departamento de Matematica Aplicada y Ciencias de la Computacion, Universidad de Cantabria, 39005 Santander (Spain); Carretero, M.; Bonilla, L.L. [G. Millan Institute, Fluid Dynamics, Nanoscience and Industrial Maths., Universidad Carlos III de Madrid, 28911 Leganes (Spain); Unidad Asociada al Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain); Platero, G. [Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain)


    The response of an n-doped dc voltage biased II-VI multi-quantum well dilute magnetic semiconductor nanostructure having its first well doped with magnetic (Mn) impurities is analyzed by sweeping wide ranges of both the voltage and the Zeeman level splitting induced by an external magnetic field. The level splitting versus voltage phase diagram shows regions of stable self-sustained current oscillations immersed in a region of stable stationary states. Transitions between stationary states and self-sustained current oscillations are systematically analyzed by both voltage and level splitting abrupt switching. Sudden voltage or/and magnetic field changes may switch on current oscillations from an initial stationary state, and reciprocally, current oscillations may disappear after sudden changes of voltage or/and magnetic field changes into the stable stationary states region. The results show how to design such a device to operate as a spin injector and a spin oscillator by tuning the Zeeman splitting (through the applied external magnetic field), the applied voltage and the sample configuration parameters (doping density, barrier and well widths, etc.) to select the desired stationary or oscillatory behavior. Phase diagram of Zeeman level splitting {delta} vs. dimensionless applied voltage {phi} for N = 10 QWs. White region: stable stationary states; black: stable self-sustained current oscillations. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. A Zero-Voltage Switching Control Strategy for Dual Half-Bridge Cascaded Three-Level DC/DC Converter with Balanced Capacitor Voltages

    DEFF Research Database (Denmark)

    Liu, Dong; Wang, Yanbo; Chen, Zhe


    for the dual half-bridge cascaded TL DC/DC converter, which can realize the zero-voltage switching (ZVS). More significantly, a capacitor voltage balance control is proposed by alternating the two working modes of the proposed ZVS PWM strategy, which can eliminate the voltage unbalance on the four input...... capacitors. Therefore, the proposed control strategy can improve the converter's performances in: 1) reducing the switching losses and noises of the power switches; and 2) reducing the voltage stresses on the input capacitors. Finally, the simulation results are conducted to verify the proposed control......The input capacitor's voltages are unbalanced under the conventional control strategy in a dual half-bridge cascaded three-level (TL) DC/DC converter, which would affect the high voltage stresses on the capacitors. This paper proposes a pulse-wide modulation (PWM) strategy with two working modes...

  13. Switched Reluctance Generator Output Voltage Ripple Reduction Based on Fuzzy Sliding Mode

    Directory of Open Access Journals (Sweden)

    Xia Fei


    Full Text Available Aiming at the problem of Switched Reluctance Generator output voltage ripple, this paper designs a fuzzy sliding mode controller based on the analysis of various factors affecting the output voltage ripple. The traditional sliding mode controller has quick convergence, but it has chattering problem. This paper introduces the fuzzy control to select the appropriate sliding mode gain. It can combine with traditional angle control to adjust the output voltage by adjusting the conduction angle. It is more effective in shortening the adjustment time and reducing the overshoot and steady-state of error compared with the classical PID control. Meanwhile, it also solves the chattering problem of traditional sliding mode control. Finally, it makes use of nonlinear model structure to validate that it is effective in restraining voltage ripple and improving the dynamic performance of the system and the voltage quality.

  14. Assumption or Fact? Line-to-Neutral Voltage Expression in an Unbalanced 3-Phase Circuit during Inverter Switching (United States)

    Masrur, M. A.


    This paper discusses the situation in a 3-phase motor or any other 3-phase system operating under unbalanced operating conditions caused by an open fault in an inverter switch. A dc voltage source is assumed as the input to the inverter, and under faulty conditions of the inverter switch, the actual voltage applied between the line to neutral…

  15. An improved algorithm for MPPT of photovoltaic system by zero voltage switching technique

    Energy Technology Data Exchange (ETDEWEB)

    Ratsame, C.; Thepa, S. [King Mongkut' s Univ. of Technology, Bangkok (Thailand). School of Energy, Environment and Materials, Div. of Energy Technology; Tanitteeapan, T.; Mungkung, N. [King Mongkut' s Univ. of Technology, Bangkok (Thailand). Dept. of Electrical Technology and Education; Boonyaroonate, I. [King Mongkut' s Univ. of Technology, Bangkok (Thailand). Dept. of Electrical Engineering


    The design and experimental use of a maximum power point tracker (MPPT) for a photovoltaic (PV) system was discussed. The proposed MPPT consists of a quasi-square ware resonant switch (QSW) and a DC-DC buck converter. This design offers several advantage compared to conventional zero voltage switching quasi resonant switches and zero voltage transition (ZVT) converters. It can operate in both continuous and discontinuous conduction mode(CCM/DCM) depending on load conditions. The converter can draw maximum power from the PV system for a given irradiation level by adjusting its duty cycle. Analytical models were built for the PV system and converter based on data provided by the manufacturer and based on the principle of energy conservation. The MPPT was shown to increase the overall efficiency of a power system by 87 per cent. Experiments confirmed the accuracy of the proposed scheme. 8 refs., 2 tabs., 14 figs.

  16. Novel Step-Up DC/DC Converter with No Right Half Plane Zero and Reduced Switched Voltage Stress Characteristics

    DEFF Research Database (Denmark)

    Mostaan, Ali; Alizadeh, Ebrahim; Soltani, Mohsen


    Novel step-up DC/DC converter is introduced in this paper. This converter is realized with adding the switched capacitor voltage multiplier cell to the three switch step-down DC/DC converter that has been proposed in the literature. The proposed converter is analyzed in the steady state...... and the voltage transfer gain is obtained. It is also demonstrated that the voltage stress on all semiconductor devices is restricted to input voltage which allows the utilization of a power switch with lower drain source resistance. In order to further increase the voltage gain another switched capacitor voltage...... multiplier cell can be added to the proposed converter. By using the state space average technique it is shown that the control to output transfer function of the proposed converter and its derivatives doesn't have right half plane zero (R.H.P.Z) that makes the dynamic behavior of these converters very fast...

  17. Ultra high voltage MOS controlled 4H-SiC power switching devices (United States)

    Ryu, S.; Capell, C.; Van Brunt, E.; Jonas, C.; O'Loughlin, M.; Clayton, J.; Lam, K.; Pala, V.; Hull, B.; Lemma, Y.; Lichtenwalner, D.; Zhang, Q. J.; Richmond, J.; Butler, P.; Grider, D.; Casady, J.; Allen, S.; Palmour, J.; Hinojosa, M.; Tipton, C. W.; Scozzie, C.


    Ultra high voltage (UHV, >15 kV) 4H-silicon carbide (SiC) power devices have the potential to significantly improve the system performance, reliability, and cost of energy conversion systems by providing reduced part count, simplified circuit topology, and reduced switching losses. In this paper, we compare the two MOS based UHV 4H-SiC power switching devices; 15 kV 4H-SiC MOSFETs and 15 kV 4H-SiC n-IGBTs. The 15 kV 4H-SiC MOSFET shows a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 mΩ cm2 at 150 °C. The 15 kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The 15 kV 4H-SiC n-IGBT shows a significantly lower forward voltage drop (VF), along with reasonable switching performance, which make it a very attractive device for high voltage applications with lower switching frequency requirements. An electrothermal analysis showed that the 15 kV 4H-SiC n-IGBT outperforms the 15 kV 4H-SiC MOSFET for applications with switching frequencies of less than 5 kHz. It was also shown that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15 kV 4H-SiC n-IGBTs.

  18. Evaluation of the contact switch materials in high voltage power supply for generate of underwater shockwave by electrical discharge

    Directory of Open Access Journals (Sweden)

    K Higa


    Full Text Available We have developed the high voltage power-supply unit by Cockcroft-Walton circuit for ingenerate high pressure due to underwater shockwave by electrical discharge. This high voltage power supply has the problem of the metal contact switch operation that contact switch stop by melting and bonding due to electrical spark. We have studied the evaluation of materials of contact switch for the reducing electrical energy loss and the problem of contact switch operation. In this research, measurement of discharge voltage and high pressure due to underwater shockwave was carried out using the contact switch made of different materials as brass plate, brass-carbon plate-brass and carbon block. The contact switch made of carbon is effective to reduce energy loss and problem of contactor switch operation.

  19. Investigations in the modelling and control of a medium voltage hybrid inverter system that uses a low voltage /low power rated auxiliary current source inverter


    Papadopoulos, Savvas; Rashed, Mohamed; Klumpner, Christian; Wheeler, Patrick


    Hybrid converters consist of a main inverter processing the bulk of the power with poor waveform performance and a fast and versatile auxiliary inverter to correct the distortion. In this paper, the main converter is a medium voltage NPC inverter and the auxiliary inverter is a low-voltage and low-current rated current source inverter (CSI), with series capacitor being used to minimize the CSI voltage stress. The result is a high output current quality which is obtained with a very low switch...

  20. High-Voltage, High-Power Gaseous Electronics Switch For Electric Grid Power Conversion (United States)

    Sommerer, Timothy J.


    We are developing a high-voltage, high-power gas switch for use in low-cost power conversion terminals on the electric power grid. Direct-current (dc) power transmission has many advantages over alternating current (ac) transmission, but at present the high cost of ac-dc power interconversion limits the use of dc. The gas switch we are developing conducts current through a magnetized cold cathode plasma in hydrogen or helium to reach practical current densities > 1 A/cm2. Thermal and sputter damage of the cathode by the incident ion flux is a major technical risk, and is being addressed through use of a ``self-healing'' liquid metal cathode (eg, gallium). Plasma conditions and cathode sputtering loss are estimated by analyzing plasma spectral emission. A particle-in-cell plasma model is used to understand various aspects of switch operation, including the conduction phase (where plasma densities can exceed 1013 cm-3), the switch-open phase (where the high-voltage must be held against gas breakdown on the left side of Paschen's curve), and the switching transitions (especially the opening process, which is initiated by forming an ion-matrix sheath adjacent to a control grid). The information, data, or work presented herein was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000298.

  1. Voltage-driven charge-mediated fast 180 degree magnetization switching in nanoheterostructure at room temperature (United States)

    Yi, Min; Zhang, Hongbin; Xu, Bai-Xiang


    Voltage-driven 180° magnetization switching without electric current provides the possibility for revolutionizing the spintronics. We demonstrated the voltage-driven charge-mediated 180° magnetization switching at room temperature by combining first-principles calculations and temperature-dependent magnetization dynamics simulation. The electric field (E)-induced interface charge is found to allow a giant modulation of the magnetic anisotropy (K) of the nanomagnet. Particularly K is revealed to vary linearly with respect to E and the epitaxial strain. Magnetization dynamics simulations using the so-obtained K show that both in-plane and perpendicular 180° switching can be achieved by E pulses. The temperature effect renders the 180° switching as probability events. Statistical analysis indicates a fast (around 4 ns) and low-error-probability 180° switching achievable at room temperature by controlling the magnitude of E and the pulse width. The study inspires the rational design of miniaturized nanoscale spintronic devices where thermal fluctuation has a great impact.

  2. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.; Andersen, Michael A.E.


    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify design, increase efficiency and integration level, reduce product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented. (au)

  3. Fringe-Field Switching Mode with Three Electrodes for Low Operating Voltage (United States)

    Park, Jun Baek; Kim, Hyang Yul; Jeong, Youn Hak; Kim, Seo Yoon; Lim, Young Jin


    In this paper, we proposed fringe-field switching (FFS) mode with new electrode structure whose additional slit electrode in addition to conventional slit electrode is located on gate insulator for low operating voltage. Using in-plane field between first and second slit electrode as well as fringe field between first slit electrode and box electrode, the overall operating voltage is decreased from over 5 to around 4 V. However, the maximum transmittance is decreased due to strong tilt-up and over twisting effect.

  4. Harmonic Analysis and Mitigation of Low-Frequency Switching Voltage Source Inverter with Series LC Filtered VSI

    DEFF Research Database (Denmark)

    Bai, Haofeng; Wang, Xiongfei; Loh, Poh Chiang


    The output currents of high power Voltage Source Inverters (VSIs) are distorted by the switching harmonics and the backgroud harmonics in the grid voltage. In this paper, a hybrid power conversion system composed of a high power VSI with low switching frequency and an auxiliary series LC filtered...... VSI is proposed. The auxiliary VSI compensates both the switching harmonics of the high power VSI and the low order harmonics. The output current of the system remains sinusoidal when grid voltage is distorted. Impedance models of the system are built in different frequency ranges and harmonic...

  5. Modular, capacitive voltage tester for MV switching systems; Modulares, kapazitives Spannungspruefsystem fuer MS-Schaltanlagen

    Energy Technology Data Exchange (ETDEWEB)

    Ader, T. [ABB Calor Emag Mittelspannung GmbH (Germany); Jenke, G. [Georg Jordan GmbH, Siegburg (Germany)


    Capacitive voltage testers are reliable, indispensable components of MV switching systems. New designs and automatic operation make new demands. The contribution shows practical solutions and outlines future trends. [German] Kapazitive Spannungspruefsysteme haben sich seit vielen Jahren als zuverlaessige, unverzichtbare Komponenten in Mittelspannungsschaltanlagen erwiesen. Weiterentwicklungen des Schaltanlagendesigns sowie eine zunehmende Automatisierung der Betriebsfuehrung stellen neue Forderungen an diese Spannungspruefsysteme. Der Beitrag zeigt praxisnah Loesungsmoeglichkeiten zur Umsetzung dieser Forderungen auf und liefert einen Ausblick auf zukuenftige Entwicklungen. (orig.)

  6. Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

    DEFF Research Database (Denmark)

    Ljusev, Petar; Andersen, Michael Andreas E.


    This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase effic...... efficiency, reduce the product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented.......This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase...

  7. Voltage-Controlled On/Off Switching of Ferromagnetism in Manganite Supercapacitors. (United States)

    Molinari, Alan; Hahn, Horst; Kruk, Robert


    The ever-growing technological demand for more advanced microelectronic and spintronic devices keeps catalyzing the idea of controlling magnetism with an electric field. Although voltage-driven on/off switching of magnetization is already established in some magnetoelectric (ME) systems, often the coupling between magnetic and electric order parameters lacks an adequate reversibility, energy efficiency, working temperature, or switching speed. Here, the ME performance of a manganite supercapacitor composed of a ferromagnetic, spin-polarized ultrathin film of La0.74 Sr0.26 MnO3 (LSMO) electrically charged with an ionic liquid electrolyte is investigated. Fully reversible, rapid, on/off switching of ferromagnetism in LSMO is demonstrated in combination with a shift in Curie temperature of up to 26 K and a giant ME coupling coefficient of ≈226 Oe V-1 . The application of voltages of only ≈2 V results in ultralow energy consumptions of about 90 µJ cm-2 . This work provides a step forward toward low-power, high-endurance electrical switching of magnetism for the development of high-performance ME spintronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Model Predictive Controlled Active NPC Inverter for Voltage Stress Balancing Among the Semiconductor Power Switches (United States)

    Parvez Akter, Md.; Dah-Chuan Lu, Dylan


    This paper presents a model predictive controlled three-level three-phase active neutral-point-clamped (ANPC) inverter for distributing the voltage stress among the semiconductor power switches as well as balancing the neutral-point voltage. The model predictive control (MPC) concept uses the discrete variables and effectively operates the ANPC inverter by avoiding any linear controller or modulation techniques. A 4.0 kW three-level three-phase ANPC inverter is developed in the MATLAB/Simulink environment to verify the effectiveness of the proposed MPC scheme. The results confirm that the proposed model predictive controlled ANPC inverter equally distributes the voltage across all the semiconductor power switches and provides lowest THD (0.99%) compared with the traditional NPC inverter. Moreover, the neutral-point voltage balancing is accurately maintained by the proposed MPC algorithm. Furthermore, this MPC concept shows the robustness capability against the parameter uncertainties of the system which is also analyzed by MATLAB/Simulink.

  9. Investigating the Effect of Voltage-Switching on Low-Energy Task Scheduling in Hard Real-Time Systems

    National Research Council Canada - National Science Library

    Swaminathan, Vishnu; Chakrabarty, Krishnendu


    We investigate the effect of voltage-switching on task execution times and energy consumption for dual-speed hard real-time systems, and present a new approach for scheduling workloads containing periodic tasks...

  10. Design of High-Voltage Switch-Mode Power Amplifier Based on Digital-Controlled Hybrid Multilevel Converter

    National Research Council Canada - National Science Library

    Hou, Yanbin; Sun, Wanrong; Ren, Aifeng; Liu, Shuming


    ...) and hybrid multilevel converter. Under the control of input signal, cascaded power converters with separate DC sources operate in PSM switch mode to directly generate high-voltage and high-power output...

  11. Slew Rate Induced Distortion in Switched-Resistor Integrators

    NARCIS (Netherlands)

    Jiraseree-Amornkun, A.; Jiraseree-amornkun, A.; Worapishet, A.; Klumperink, Eric A.M.; Nauta, Bram; Surakampontorn, W.


    Abstract—OPAMP-RC integrators built with linear resistors and capacitors can achieve very high linearity. By means of a switched resistor, tuning of the RC time-constant is possible via the duty-cycle of the clock controlling the switched resistor. This paper analyzes the effect of OPAMP slew rate

  12. Topographical and electrochemical nanoscale imaging of living cells using voltage-switching mode scanning electrochemical microscopy (United States)

    Takahashi, Yasufumi; Shevchuk, Andrew I.; Novak, Pavel; Babakinejad, Babak; Macpherson, Julie; Unwin, Patrick R.; Shiku, Hitoshi; Gorelik, Julia; Klenerman, David; Korchev, Yuri E.; Matsue, Tomokazu


    We describe voltage-switching mode scanning electrochemical microscopy (VSM-SECM), in which a single SECM tip electrode was used to acquire high-quality topographical and electrochemical images of living cells simultaneously. This was achieved by switching the applied voltage so as to change the faradaic current from a hindered diffusion feedback signal (for distance control and topographical imaging) to the electrochemical flux measurement of interest. This imaging method is robust, and a single nanoscale SECM electrode, which is simple to produce, is used for both topography and activity measurements. In order to minimize the delay at voltage switching, we used pyrolytic carbon nanoelectrodes with 6.5–100 nm radii that rapidly reached a steady-state current, typically in less than 20 ms for the largest electrodes and faster for smaller electrodes. In addition, these carbon nanoelectrodes are suitable for convoluted cell topography imaging because the RG value (ratio of overall probe diameter to active electrode diameter) is typically in the range of 1.5–3.0. We first evaluated the resolution of constant-current mode topography imaging using carbon nanoelectrodes. Next, we performed VSM-SECM measurements to visualize membrane proteins on A431 cells and to detect neurotransmitters from a PC12 cells. We also combined VSM-SECM with surface confocal microscopy to allow simultaneous fluorescence and topographical imaging. VSM-SECM opens up new opportunities in nanoscale chemical mapping at interfaces, and should find wide application in the physical and biological sciences. PMID:22611191

  13. Soft switching (ZVZCS) high current, low voltage modular power converter (13 kA, 16 V)

    CERN Document Server

    Bordry, Frederick; Thiesen, H


    The Large Hadron Collider (LHC) is the next accelerator being constructed at the European Laboratory for Particle Physics (CERN). The superconducting LHC particle accelerator requires high currents (13 kA) and relatively low voltages (16 V) for its magnets. This paper describes the development and the production of a (13 kA, 16 V) power converter. The converter is made with a modular concept with five current sources (3.25 kA, 16 V) in parallel. The 3.25 kA sources are built as plug-in modules: a diode rectifier on the AC mains, a zero voltage zero current switching (ZVZCS) inverter working at 25 k Hz and an output stage. The obtained performance is presented and discussed. (6 refs).

  14. The piezoelectronic stress transduction switch for very large-scale integration, low voltage sensor computation, and radio frequency applications (United States)

    Magdǎu, I.-B.; Liu, X.-H.; Kuroda, M. A.; Shaw, T. M.; Crain, J.; Solomon, P. M.; Newns, D. M.; Martyna, G. J.


    The piezoelectronic transduction switch is a device with potential as a post-CMOS transistor due to its predicted multi-GHz, low voltage performance on the VLSI-scale. However, the operating principle of the switch has wider applicability. We use theory and simulation to optimize the device across a wide range of length scales and application spaces and to understand the physics underlying its behavior. We show that the four-terminal VLSI-scale switch can operate at a line voltage of 115 mV while as a low voltage-large area device, ≈200 mV operation at clock speeds of ≈2 GHz can be achieved with a desirable 104 On/Off ratio—ideal for on-board computing in sensors. At yet larger scales, the device is predicted to operate as a fast (≈250 ps) radio frequency (RF) switch exhibiting high cyclability, low On resistance and low Off capacitance, resulting in a robust switch with a RF figure of merit of ≈4 fs. These performance benchmarks cannot be approached with CMOS which has reached fundamental limits. In detail, a combination of finite element modeling and ab initio calculations enables prediction of switching voltages for a given design. A multivariate search method then establishes a set of physics-based design rules, discovering the key factors for each application. The results demonstrate that the piezoelectronic transduction switch can offer fast, low power applications spanning several domains of the information technology infrastructure.

  15. Bilayer-Spanning DNA Nanopores with Voltage-Switching between Open and Closed State (United States)


    Membrane-spanning nanopores from folded DNA are a recent example of biomimetic man-made nanostructures that can open up applications in biosensing, drug delivery, and nanofluidics. In this report, we generate a DNA nanopore based on the archetypal six-helix-bundle architecture and systematically characterize it via single-channel current recordings to address several fundamental scientific questions in this emerging field. We establish that the DNA pores exhibit two voltage-dependent conductance states. Low transmembrane voltages favor a stable high-conductance level, which corresponds to an unobstructed DNA pore. The expected inner width of the open channel is confirmed by measuring the conductance change as a function of poly(ethylene glycol) (PEG) size, whereby smaller PEGs are assumed to enter the pore. PEG sizing also clarifies that the main ion-conducting path runs through the membrane-spanning channel lumen as opposed to any proposed gap between the outer pore wall and the lipid bilayer. At higher voltages, the channel shows a main low-conductance state probably caused by electric-field-induced changes of the DNA pore in its conformation or orientation. This voltage-dependent switching between the open and closed states is observed with planar lipid bilayers as well as bilayers mounted on glass nanopipettes. These findings settle a discrepancy between two previously published conductances. By systematically exploring a large space of parameters and answering key questions, our report supports the development of DNA nanopores for nanobiotechnology. PMID:25338165

  16. Bilayer-spanning DNA nanopores with voltage-switching between open and closed state. (United States)

    Seifert, Astrid; Göpfrich, Kerstin; Burns, Jonathan R; Fertig, Niels; Keyser, Ulrich F; Howorka, Stefan


    Membrane-spanning nanopores from folded DNA are a recent example of biomimetic man-made nanostructures that can open up applications in biosensing, drug delivery, and nanofluidics. In this report, we generate a DNA nanopore based on the archetypal six-helix-bundle architecture and systematically characterize it via single-channel current recordings to address several fundamental scientific questions in this emerging field. We establish that the DNA pores exhibit two voltage-dependent conductance states. Low transmembrane voltages favor a stable high-conductance level, which corresponds to an unobstructed DNA pore. The expected inner width of the open channel is confirmed by measuring the conductance change as a function of poly(ethylene glycol) (PEG) size, whereby smaller PEGs are assumed to enter the pore. PEG sizing also clarifies that the main ion-conducting path runs through the membrane-spanning channel lumen as opposed to any proposed gap between the outer pore wall and the lipid bilayer. At higher voltages, the channel shows a main low-conductance state probably caused by electric-field-induced changes of the DNA pore in its conformation or orientation. This voltage-dependent switching between the open and closed states is observed with planar lipid bilayers as well as bilayers mounted on glass nanopipettes. These findings settle a discrepancy between two previously published conductances. By systematically exploring a large space of parameters and answering key questions, our report supports the development of DNA nanopores for nanobiotechnology.

  17. Design of High-Voltage Switch-Mode Power Amplifier Based on Digital-Controlled Hybrid Multilevel Converter

    Directory of Open Access Journals (Sweden)

    Yanbin Hou


    Full Text Available Compared with conventional Class-A, Class-B, and Class-AB amplifiers, Class-D amplifier, also known as switching amplifier, employs pulse width modulation (PWM technology and solid-state switching devices, capable of achieving much higher efficiency. However, PWM-based switching amplifier is usually designed for low-voltage application, offering a maximum output voltage of several hundred Volts. Therefore, a step-up transformer is indispensably adopted in PWM-based Class-D amplifier to produce high-voltage output. In this paper, a switching amplifier without step-up transformer is developed based on digital pulse step modulation (PSM and hybrid multilevel converter. Under the control of input signal, cascaded power converters with separate DC sources operate in PSM switch mode to directly generate high-voltage and high-power output. The relevant topological structure, operating principle, and design scheme are introduced. Finally, a prototype system is built, which can provide power up to 1400 Watts and peak voltage up to ±1700 Volts. And the performance, including efficiency, linearity, and distortion, is evaluated by experimental tests.

  18. IGCTs - megawatt power switches for medium-voltage applications; IGCTs - Megawatt-Halbleiterschalter fuer den Mittelspannungsbereich

    Energy Technology Data Exchange (ETDEWEB)

    Stillman, H.M. [ABB Corporate Technology, ABB Asea Brown Boveri AG, Zurich (Switzerland)


    Designing equipment to switch megawatts of power at medium-voltge levels is a difficult taks. The inherent characteristics of the two available silicon switching technologies, Gate Turn-Off (GTO) Thyristors and Insulated Gate Bipolar Transistors (IGBTs), force design trade-offs that increase the cost and complexity of power control systems. GTO thyristors not only require complex peripheral circuitry to ensure reliable operation but also switch at low frequency. Designers of IGBT-based systems at medium voltage must deal with high losses and balance an increase in the number of components with the need to ensure availability. ABB`s new Integrated Gate Commutated Thyristor (IGCT) technology overcomes the drawbacks of both the GTO thyristor and the IGBT, and includes all the circuitry required to make the power device reliable and easy to design into medium-voltage applications. (orig.) [Deutsch] Die Auslegung von Halbleiterbauelementen zum Schalten von Leistungen im Megawattbereich fuer die Mittelspannungsebenen ist problematisch. Die natuerlichen Eigenschaften der zwei in Silizium-Technik zur Verfuegung stehenden Leistungshalbleiter, naemlich GTO-Thyristoren (Gate-Turn-Off) und IGBTs (Insulated Gate Biplar Transistors) zwingen bei der Auslegung zu Kompromissen, die Systeme zur Leistungsstellung und -regelung kostspieliger und aufwendiger machen. Die GTO-Thyristoren brauchen zu ihrem zuverlaessigen Betrieb nicht nur komplexe periphere Schaltungen, sondern sie haben auch eine niedrige Schaltfrequenz. Die Entwicklungsingenieure fuer in IGBT-Technik ausgefuehrte Systeme muessen einerseits mit dem Problem hoher Verluste fertig werden und andererseits einen hoeheren Bedarf an Komponenten mit der Forderung nach hoher Verfuegbarkeit in Einklang bringen. Die neue, von ABB entwickelte IGCT-Technik (Integrated Gate Commutated Thyristor) ueberwindet sowohl die Nachteile des GTO-Thyristors als auch des IGBT und enthaelt alle Schaltungen, die notwendig sind, damit das

  19. Simple, compact, and low cost CO2 laser driven by fast high voltage solid state switch for industrial application (United States)

    Tanaka, Miyu; Tei, Masaya; Uno, Kazuyuki; Nakano, Hitoshi


    A longitudinally excited CO2 laser driven with a reverse recovery characteristics of high voltage diode has been developed. A diode is used to control the high voltage pulse as an opening switch. Power supply for longitudinally excited CO2 laser is composed of a pulse generator, transformer, capacitor, and a diode, is very simple. Laser oscillation has been successfully achieved, several tens of mJ in laser energy has been obtained.

  20. Efficiency Enhancement of a Low-Voltage Automotive Vacuum Cleaner Using a Switched Reluctance Motor

    Directory of Open Access Journals (Sweden)

    Han-Geol Seon


    Full Text Available A recent increase in the number of diverse leisure activities and family outdoor activities has increased the need for the automobile-embedded vacuum cleaner. To date, this technology has not been applied in Korea and development efforts are not underway. Many of the existing portable cleaners connecting to the lighter jack of the vehicle use a direct current motor (DC motor. However, they do not have sufficient suction power to satisfy consumers; moreover, they have low durability and efficiency. In this paper, we therefore propose a technology for increasing the efficiency of the low-voltage automobile vacuum cleaner by replacing the existing DC motor with a switched reluctance motor (SRM, which has superior durability and efficiency.

  1. A single leg switched PWM method for three-phase H-Bridge Voltage Source Converters

    DEFF Research Database (Denmark)

    Senturk, Osman Selcuk; Helle, Lars; Munk-Nielsen, Stig


    This paper proposes a single leg switched or a hybrid PWM (HPWM) method for three-phase three-level H-Bridge Voltage Source Converters (3L-HB-VSCs). By means of the proposed modulation, a 3L-HB-VSC can generate the same output as a three-level neutral point clamped (3L-NPC) VSC with phase...... disposition (PD) PWM provided that the outputs of 3L-HBVSC are isolated by transformers or connected to open winding machines. Thus, the proposed method is called PD-HPWM. Moreover, it is emphasized that 3L-HB-VSC with HPWM utilizes its switches similar to 3L-NPC-VSC. Compared to 3L-NPC-VSCs, 3L......-HB-VSCs (without neutral point clamping diodes) have simpler, more modular, and more reliable 2L circuit structure. Therefore, this method encourages the use of 3L-HB-VSCs in the applications utilizing transformers such as grid-side converters of multi-MW wind turbines. The proposed PWM method's performance...

  2. Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized (United States)

    Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.


    A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

  3. Determination of economically justified parameters of synchronous disconnection at low-voltage circuit switching via a synchronous vacuum contactor

    Directory of Open Access Journals (Sweden)

    A.V. Verkhola


    Full Text Available Dependence of a single switching procedure cost upon the contact opening delay time and delay-time spread is derived for a low-voltage synchronous vacuum contactor. For different cost levels, boundaries of permissible values of delay-time and delay-time spread are specified.

  4. On-line Monitoring Device for High-voltage Switch Cabinet Partial Discharge Based on Pulse Current Method (United States)

    Y Tao, S.; Zhang, X. Z.; Cai, H. W.; Li, P.; Feng, Y.; Zhang, T. C.; Li, J.; Wang, W. S.; Zhang, X. K.


    The pulse current method for partial discharge detection is generally applied in type testing and other off-line tests of electrical equipment at delivery. After intensive analysis of the present situation and existing problems of partial discharge detection in switch cabinets, this paper designed the circuit principle and signal extraction method for partial discharge on-line detection based on a high-voltage presence indicating systems (VPIS), established a high voltage switch cabinet partial discharge on-line detection circuit based on the pulse current method, developed background software integrated with real-time monitoring, judging and analyzing functions, carried out a real discharge simulation test on a real-type partial discharge defect simulation platform of a 10KV switch cabinet, and verified the sensitivity and validity of the high-voltage switch cabinet partial discharge on-line monitoring device based on the pulse current method. The study presented in this paper is of great significance for switch cabinet maintenance and theoretical study on pulse current method on-line detection, and has provided a good implementation method for partial discharge on-line monitoring devices for 10KV distribution network equipment.

  5. Modeling and control of threshold voltage based on pull-in characteristic for micro self-locked switch (United States)

    Deng, Jufeng; Hao, Yongping; Liu, Shuangjie


    Micro self-locked switches (MSS), where execution voltage corresponds to the output signal, are efficient and convenient platforms for sensor applications. The proper functioning of these sensing devices requires driving accurate displacement under execution voltage. In this work, we show how to control the actuating properties of MSSS. This switch comprises microstructures of various shapes with dimensions from 3.5 to 180 μm, which are optimized to encode a desired manufacture deviation by means of mathematical model of threshold voltage. Compared with pull-in voltage, threshold voltage is more easy to control the pull-in instability point by theoretical analysis. With the help of advanced manufacture technology, switch is processed in accordance with the proposed control method. Then, experimental results show that it is better, which have been validated by corresponding experiments. In addition, they can be known from experiments that the manufacturing technology is advanced and feasible, and its high resilience and stably self-locked function can achieve instantaneously sensing.

  6. An Enhanced Three-Level Voltage Switching State Scheme for Direct Torque Controlled Open End Winding Induction Motor (United States)

    Kunisetti, V. Praveen Kumar; Thippiripati, Vinay Kumar


    Open End Winding Induction Motors (OEWIM) are popular for electric vehicles, ship propulsion applications due to less DC link voltage. Electric vehicles, ship propulsions require ripple free torque. In this article, an enhanced three-level voltage switching state scheme for direct torque controlled OEWIM drive is implemented to reduce torque and flux ripples. The limitations of conventional Direct Torque Control (DTC) are: possible problems during low speeds and starting, it operates with variable switching frequency due to hysteresis controllers and produces higher torque and flux ripple. The proposed DTC scheme can abate the problems of conventional DTC with an enhanced voltage switching state scheme. The three-level inversion was obtained by operating inverters with equal DC-link voltages and it produces 18 voltage space vectors. These 18 vectors are divided into low and high frequencies of operation based on rotor speed. The hardware results prove the validity of proposed DTC scheme during steady-state and transients. From simulation and experimental results, proposed DTC scheme gives less torque and flux ripples on comparison to two-level DTC. The proposed DTC is implemented using dSPACE DS-1104 control board interface with MATLAB/SIMULINK-RTI model.

  7. Delayed avalanche breakdown of high-voltage silicon diodes: Various structures exhibit different picosecond-range switching behavior (United States)

    Brylevskiy, Viktor; Smirnova, Irina; Gutkin, Andrej; Brunkov, Pavel; Rodin, Pavel; Grekhov, Igor


    We present a comparative study of silicon high-voltage diodes exhibiting the effect of delayed superfast impact-ionization breakdown. The effect manifests itself in a sustainable picosecond-range transient from the blocking to the conducting state and occurs when a steep voltage ramp is applied to the p+-n-n+ diode in the reverse direction. Nine groups of diodes with graded and abrupt pn-junctions have been specially fabricated for this study by different techniques from different Si substrates. Additionally, in two groups of these structures, the lifetime of nonequilibrium carriers was intentionally reduced by electron irradiation. All diodes have identical geometrical parameters and similar stationary breakdown voltages. Our experimental setup allows measuring both device voltage and current during the kilovolt switching with time resolution better than 50 ps. Although all devices are capable of forming a front with kilovolt amplitude and 100 ps risetime in the in-series load, the structures with graded pn-junctions have anomalously large residual voltage. The Deep Level Transient Spectroscopy study of all diode structures has been performed in order to evaluate the effect of deep centers on device performance. It was found that the presence of deep-level electron traps negatively correlates with parameters of superfast switching, whereas a large concentration of recombination centers created by electron irradiation has virtually no influence on switching characteristics.

  8. Soft-Switched Dual-Input DC-DC Converter Combining a Boost-Half-Bridge Cell and a Voltage-Fed Full-Bridge Cell

    DEFF Research Database (Denmark)

    Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.


    This paper presents a new zero-voltage-switching (ZVS) isolated dc-dc converter which combines a boost halfbridge (BHB) cell and a full-bridge (FB) cell, so that two different type of power sources, i.e. both current-fed and voltage-fed, can be coupled effectively by the proposed converter...... for various applications, such as fuel cell and super-capacitor hybrid energy system. By fully using two high frequency transformers and a shared leg of switches, number of the power devices and associated gate driver circuits can be reduced. With phase-shift control, the converter can achieve ZVS turn......-on of active switches and zero-current switching (ZCS) turn-off of diodes. In this paper, derivation, analysis and design of the proposed converter are presented. Finally, a 25~50 V input, 300~400 V output prototype with a 600 W nominal power rating is built up and tested to demonstrate the effectiveness...

  9. Mathematical Derivation of Switching Angles of Multilevel Voltage Source Inverter based on Alternative Phase Opposition Disposition (APOD

    Directory of Open Access Journals (Sweden)

    Ismail Mohd Alif


    Full Text Available Modular structured multilevel inverter is very useful for electrical application especially in high voltage and high power applications. The main function of this multilevel inverter is to produce multilevel AC output voltage from several separate DC sources. This project is to derive a newmathematical formulation of multilevel voltage source inverter switching instants. The proposed method for this project is based on the sinusoidal natural sampling PWM (SPWM by comparing several modified modulation signal with a triangular carrier signal. This resulting intersection points between this modulation and carrier signal become the switching instants of the PWM pulses. Derivation also based on Alternative Phase opposition disposition (APOD. A cascaded multilevel inverter is selected as a topology for this project due to major advantages compare with other topology. The derived formula is analyzed by using MATLAB simulation software. It is found that the results that use the derived formula are almost identical to simulation result.

  10. High voltage high repetition rate pulse using Marx topology (United States)

    Hakki, A.; Kashapov, N.


    The paper describes Marx topology using MOSFET transistors. Marx circuit with 10 stages has been done, to obtain pulses about 5.5KV amplitude, and the width of the pulses was about 30μsec with a high repetition rate (PPS > 100), Vdc = 535VDC is the input voltage for supplying the Marx circuit. Two Ferrite ring core transformers were used to control the MOSFET transistors of the Marx circuit (the first transformer to control the charging MOSFET transistors, the second transformer to control the discharging MOSFET transistors).

  11. Hybrid colored noise process with space-dependent switching rates (United States)

    Bressloff, Paul C.; Lawley, Sean D.


    A fundamental issue in the theory of continuous stochastic process is the interpretation of multiplicative white noise, which is often referred to as the Itô-Stratonovich dilemma. From a physical perspective, this reflects the need to introduce additional constraints in order to specify the nature of the noise, whereas from a mathematical perspective it reflects an ambiguity in the formulation of stochastic differential equations (SDEs). Recently, we have identified a mechanism for obtaining an Itô SDE based on a form of temporal disorder. Motivated by switching processes in molecular biology, we considered a Brownian particle that randomly switches between two distinct conformational states with different diffusivities. In each state, the particle undergoes normal diffusion (additive noise) so there is no ambiguity in the interpretation of the noise. However, if the switching rates depend on position, then in the fast switching limit one obtains Brownian motion with a space-dependent diffusivity of the Itô form. In this paper, we extend our theory to include colored additive noise. We show that the nature of the effective multiplicative noise process obtained by taking both the white-noise limit (κ →0 ) and fast switching limit (ɛ →0 ) depends on the order the two limits are taken. If the white-noise limit is taken first, then we obtain Itô, and if the fast switching limit is taken first, then we obtain Stratonovich. Moreover, the form of the effective diffusion coefficient differs in the two cases. The latter result holds even in the case of space-independent transition rates, where one obtains additive noise processes with different diffusion coefficients. Finally, we show that yet another form of multiplicative noise is obtained in the simultaneous limit ɛ ,κ →0 with ɛ /κ2 fixed.

  12. Novel analytical model for optimizing the pull-in voltage in a flexured MEMS switch incorporating beam perforation effect (United States)

    Guha, K.; Laskar, N. M.; Gogoi, H. J.; Borah, A. K.; Baishnab, K. L.; Baishya, S.


    This paper presents a new method for the design, modelling and optimization of a uniform serpentine meander based MEMS shunt capacitive switch with perforation on upper beam. The new approach is proposed to improve the Pull-in Voltage performance in a MEMS switch. First a new analytical model of the Pull-in Voltage is proposed using the modified Mejis-Fokkema capacitance model taking care of the nonlinear electrostatic force, the fringing field effect due to beam thickness and etched holes on the beam simultaneously followed by the validation of same with the simulated results of benchmark full 3D FEM solver CoventorWare in a wide range of structural parameter variations. It shows a good agreement with the simulated results. Secondly, an optimization method is presented to determine the optimum configuration of switch for achieving minimum Pull-in voltage considering the proposed analytical mode as objective function. Some high performance Evolutionary Optimization Algorithms have been utilized to obtain the optimum dimensions with less computational cost and complexity. Upon comparing the applied algorithms between each other, the Dragonfly Algorithm is found to be most suitable in terms of minimum Pull-in voltage and higher convergence speed. Optimized values are validated against the simulated results of CoventorWare which shows a very satisfactory results with a small deviation of 0.223 V. In addition to these, the paper proposes, for the first time, a novel algorithmic approach for uniform arrangement of square holes in a given beam area of RF MEMS switch for perforation. The algorithm dynamically accommodates all the square holes within a given beam area such that the maximum space is utilized. This automated arrangement of perforation holes will further improve the computational complexity and design accuracy of the complex design of perforated MEMS switch.

  13. Flexible low-voltage organic integrated circuits with megahertz switching frequencies (Presentation Recording) (United States)

    Zschieschang, Ute; Takimiya, Kazuo; Zaki, Tarek; Letzkus, Florian; Richter, Harald; Burghartz, Joachim N.; Klauk, Hagen


    A process for the fabrication of integrated circuits based on bottom-gate, top-contact organic thin-film transistors (TFTs) with channel lengths as short as 1 µm on flexible plastic substrates has been developed. In this process, all TFT layers (gate electrodes, organic semiconductors, source/drain contacts) are patterned with the help of high-resolution silicon stencil masks, thus eliminating the need for subtractive patterning and avoiding the exposure of the organic semiconductors to potentially harmful organic solvents or resists. The TFTs employ a low-temperature-processed gate dielectric that is sufficiently thin to allow the TFTs and circuits to operate with voltages of about 3 V. Using the vacuum-deposited small-molecule organic semiconductor 2,9-didecyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10 DNTT), TFTs with an effective field-effect mobility of 1.2 cm2/Vs, an on/off current ratio of 107, a width-normalized transconductance of 1.2 S/m (with a standard deviation of 6%), and a signal propagation delay (measured in 11-stage ring oscillators) of 420 nsec per stage at a supply voltage of 3 V have been obtained. To our knowledge, this is the first time that megahertz operation has been achieved in flexible organic transistors at supply voltages of less than 10 V. In addition to flexible ring oscillators, we have also demonstrated a 6-bit digital-to-analog converter (DAC) in a binary-weighted current-steering architecture, based on TFTs with a channel length of 4 µm and fabricated on a glass substrate. This DAC has a supply voltage of 3.3 V, a circuit area of 2.6 × 4.6 mm2, and a maximum sampling rate of 100 kS/s.

  14. Voltage- and current-activated metal–insulator transition in VO2-based electrical switches: a lifetime operation analysis

    Directory of Open Access Journals (Sweden)

    Aurelian Crunteanu, Julien Givernaud, Jonathan Leroy, David Mardivirin, Corinne Champeaux, Jean-Christophe Orlianges, Alain Catherinot and Pierre Blondy


    Full Text Available Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal–insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal–insulator transition in VO2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO2-based switching (more than 260 million cycles without failure compared with the voltage-activated mode (breakdown at around 16 million activation cycles. The evolution of the electrical self-oscillations of a VO2-based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

  15. Parameters Designing of Slide Mode Variable Structure Controller of Bus Voltage of DC Microgrid Based on Proportion Switching Function

    Directory of Open Access Journals (Sweden)

    Sun Zhenchuan


    Full Text Available Constant value control of the DC-bus voltage is a essential problem of the control system of the DC microgrids. DC-DC converters are applied in parallel to realize the transform of energy from the distributed generations (DGs to the DC-bus. Droop control methods are applied to the DC-bus voltage while PI controllers are used in controlling the duty ratios of the converters. This method may bring out the slow response speed of the system accompanied by the large ripple of the voltage. The slide mode variable structure control can speed up the response and reduce the ripple of the voltage as well. In the traditional slide mode control based on the proportion switching function, the denominator of the transfer function of the controlled plant is a second-order characteristic polynomial without the constant term. The denominators of the transfer functions of the buck DC-DC converters contain the constant terms. The designing of the parameters of the slide mode control based on the proportion switching function is analyzed based on mathematics deductions. Simulation results show that the selected parameters can not only speed up the response of the system but also greatly reduce the ripple of the voltage.

  16. Design of a Low-Voltage High-Speed Switched-Capacitor Filters Using Improved Auto Zeroed Integrator (United States)

    Rashtian, M.; Hashemipour, O.; Navi, K.

    The low-voltage high-speed auto zeroed integrator characteristics is improved by applying current steering mechanism in the opamp structure of the integrators and utilizing the non-linear properties of switches. The proposed design results in considerable reduction of power dissipation. Based on this improvement a band-pass filter with centre frequency of 1 MHz and clock frequency of 6 MHz is designed. Furthermore a new circuit for implementation of an auto-zero low-pass filter is presented. Based on this configuration a fourth order low-pass switched capacitor filter with cut off frequency of 600 KHz and clock frequency of 6 MHz is presented. The proposed circuits are simulated using HSPICE and 0.25 μm CMOS technology at 1.5 V supply voltage.

  17. Zero-voltage and Zero-current-switching of Half-bridge PWM Converter for High Power Applications

    Directory of Open Access Journals (Sweden)

    Berzan V.


    Full Text Available The design and control of a half-bridge converter that ensures zero voltage and zero current shifting of electronic switches throughout the load band for a large range of input voltage is described in this paper. The new proposed topology of the converter achieves a substantial reduction of losses due to the shifting of electronic switches and oscillating currents. The proposed topology has a simple technical scheme with minimal number of control elements with a total low price, as well. The control of the proposed converter can be implemented by applying the technique of pulse width modulation (PWM. The functionality, stability and performance of the proposed converter topology have been verified on an experimental converter at power range 420 W (400V, 50V.

  18. Analysis and design of a high-efficiency zero-voltage-switching step ...

    Indian Academy of Sciences (India)

    switching; zero-current-switching. 1. Introduction. Recently, high-efficiency power conversion techniques have been researched due to the increas- ing emphasis on the environment protection and energy saving. Also, high efficiency is one of.

  19. Analysis and design of a high-efficiency zero-voltage-switching step ...

    Indian Academy of Sciences (India)

    The output diodes are under zero-current-switching (ZCS) during turn-off. Due to soft-switching operation of the power switches and output diodes, the proposed ZVS DC–DC converter shows high efficiency. Steady-state analysis of the converter is presented to determine the circuit parameters. A laboratory prototype of the ...

  20. Irradiation of optically activated SI-GaAs high-voltage switches with low and high energy protons

    CERN Document Server

    Bertolucci, Ennio; Mettivier, G; Russo, P; Bisogni, M G; Bottigli, U; Fantacci, M E; Stefanini, A; Cola, A; Quaranta, F; Vasanelli, L; Stefanini, G


    Semi-Insulating Gallium Arsenide (SI-GaAs) devices have been tested for radiation hardness with 3-4 MeV or 24 GeV proton beams. These devices can be operated in dc mode as optically activated electrical switches up to 1 kV. Both single switches (vertical Schottky diodes) and multiple (8) switches (planar devices) have been studied, by analyzing their current-voltage (I-V) reverse characteristics in the dark and under red light illumination, both before and after irradiation. We propose to use them in the system of high-voltage (-600 V) switches for the microstrip gas chambers for the CMS experiment at CERN. Low energy protons (3-4 MeV) were used in order to produce a surface damage below the Schottky contact: their fluence (up to 2.6*10/sup 15/ p/cm/sup 2/) gives a high-dose irradiation. The high energy proton irradiation (energy: 24 GeV, fluence: 1.1*10/sup 14/ p/cm/sup 2/) reproduced a ten years long proton exposure of the devices in CMS experiment conditions. For low energy irradiation, limited changes of ...

  1. Optical Switching and Bit Rates of 40 Gbit/s and above

    DEFF Research Database (Denmark)

    Ackaert, A.; Demester, P.; O'Mahony, M.


    Optical switching in WDM networks introduces additional aspects to the choice of single channel bit rates compared to WDM transmission systems. The mutual impact of optical switching and bit rates of 40 Gbps and above is discussed....

  2. Modeling of Spring Constant and Pull-in Voltage of T-Shaped Radio Frequency Microelectromechanical (RF-MEMS Cantilever Switch

    Directory of Open Access Journals (Sweden)

    Shakti P TRIPATHY


    Full Text Available This paper presents the design and simulation of a low actuation voltage microelectromechanical system (MEMS switch for high-frequency applications. Low pull-in voltage and low spring constant of the switch were achieved by using T-shape microcantilever of specific dimension. The modelling indicated that increased area of actuation at a distance from the fixed end reduced the pull-in voltage. Increasing the length of the cantilever was also observed to decrease the pull-in voltage to an even greater extent than increasing the actuation area did. It has been observed that switches using this design and actuation mechanism, the minimum pull-in voltage of 5-8 V can be achieved. Finally, both theoretical and simulated data for the dynamic behaviour of the device is presented.

  3. The effect of activation rate on left atrial bipolar voltage in patients with paroxysmal atrial fibrillation. (United States)

    Williams, Steven E; Linton, Nick; O'Neill, Louisa; Harrison, James; Whitaker, John; Mukherjee, Rahul; Rinaldi, Christopher A; Gill, Jaswinder; Niederer, Steven; Wright, Matthew; O'Neill, Mark


    Bipolar voltage is used during electroanatomic mapping to define abnormal myocardium, but the effect of activation rate on bipolar voltage is not known. We hypothesized that bipolar voltage may change in response to activation rate. By examining corresponding unipolar signals we sought to determine the mechanisms of such changes. LA extrastimulus mapping was performed during CS pacing in 10 patients undergoing first time paroxysmal atrial fibrillation ablation. Bipolar and unipolar electrograms were recorded using a PentaRay catheter (4-4-4 spacing) and indifferent IVC electrode, respectively. An S1S2 pacing protocol was delivered with extrastimulus coupling interval reducing from 350 to 200 milliseconds. At each recording site (119 ± 37 per LA), bipolar peak-to-peak voltage, unipolar peak to peak voltage and activation delay between unipole pairs was measured. Four patterns of bipolar voltage/extrastimulus coupling interval curves were seen: voltage attenuation with plateau voltage >1 mV (48 ± 15%) or voltage unaffected by coupling interval with plateau voltage >1 mV (17 ± 10%) or voltage attenuation were associated with significantly greater unipolar voltage attenuation at low (25 ± 28 mV/s vs. 9 ± 11 mV/s) and high (23 ± 29 mV/s vs. 6 ± 12 mV/s) plateau voltage sites (P voltage attenuation (P = 0.026). Bipolar electrogram voltage is dependent on activation rate at a significant proportion of sites. Changes in unipolar voltage and timing underlie these effects. These observations have important implications for use of voltage mapping to delineate abnormal atrial substrate. © 2017 The Authors. Journal of Cardiovascular Electrophysiology published by Wiley Periodicals, Inc.

  4. Integrated voltage regulators with high-side NMOS power switch and dedicated bootstrap driver using vertical body channel MOSFET under 100 MHz switching frequency for compact system and efficiency enhancement (United States)

    Itoh, Kazuki; Muraguchi, Masakazu; Endoh, Tetsuo


    In this paper, integrated voltage regulators (IVRs) with a cascode bridge circuit composed of a high-side (HS) NMOS power switch and a dedicated bootstrap driver using a vertical body channel (BC) MOSFET are proposed for improving efficiency under 100 MHz switching frequency. The proposed circuit utilizes the back-bias effect free characteristic of the vertical BC MOSFET without additional well structures such as a triple-well structure for efficiency enhancement. Power switching of twice the process voltage V MAX with an HS NMOS power switch is realized by a novel circuit technique that directly connects the bootstrap node to the gate of an n-type MOSFET connected to the input voltage. Moreover, by using a vertical BC MOSFET free from the back-bias effect, the on-resistance increase of the HS NMOS power switch due to the high input voltage is significantly suppressed, and the drain-to-source voltage of MOSFETs in the off-state is distributed uniformly in comparison with that of a planar MOSFET. The proposed IVR of 3.3 V input voltage and 1.2 V output voltage is designed and simulated by HSPICE. Additionally, the power transistor size dependence of efficiency indicated that the proposed IVR can achieve a 4.2% higher peak efficiency than the conventional IVR with a 26% smaller total power transistor size.

  5. A High-Voltage class-D power amplifier with switching frequency regulation for improved high-efficiency output power range

    NARCIS (Netherlands)

    Ma, H.; van der Zee, Ronan A.R.; Nauta, Bram


    This paper describes the power dissipation analysis and the design of an efficiency-improved high-voltage class-D power amplifier. The amplifier adaptively regulates its switching frequency for optimal power efficiency across the full output power range. This is based on detecting the switching

  6. Effect of voltage sags on digitally controlled line connected switched-mode power supplies

    DEFF Research Database (Denmark)

    Török, Lajos; Munk-Nielsen, Stig


    Different voltage disorders like voltage fluctuations, sags, frequency variations may occur in the power supply networks due to different fault conditions. These deviations from normal operation affects in different ways the line connected devices. Standards were developed to protect and ensure...... of voltage sags is analyzed. Fault tolerant control algorithm was designed, implemented and is discussed. The fault conditions and their effects were investigated at different power levels....

  7. High Power Zero-Voltage and Zero-Current Switching DC-DC Converters

    Directory of Open Access Journals (Sweden)

    Jaroslav Dudrik


    Full Text Available The paper presents principles and properties of the soft switching PWM DC-DC converters. The attention is focused mainly on high power applications and thus the full-bridge inverters are used in DC-DC converters. Considerations are also given to the control methods and principles of the switching and conduction losses reduction.

  8. Passive Classification of Wireless NICs during Rate Switching

    Directory of Open Access Journals (Sweden)

    Beyah RaheemA


    Full Text Available Abstract Computer networks have become increasingly ubiquitous. However, with the increase in networked applications, there has also been an increase in difficulty to manage and secure these networks. The proliferation of 802.11 wireless networks has heightened this problem by extending networks beyond physical boundaries. We propose the use of spectral analysis to identify the type of wireless network interface card (NIC. This mechanism can be applied to support the detection of unauthorized systems that use NICs which are different from that of a legitimate system. We focus on rate switching, a vaguely specified mechanism required by the 802.11 standard that is implemented in the hardware and software of the wireless NIC. We show that the implementation of this function influences the transmission patterns of a wireless stream, which are observable through traffic analysis. Our mechanism for NIC identification uses signal processing to analyze the periodicity embedded in the wireless traffic caused by rate switching. A stable spectral profile is created from the periodic components of the traffic and used for the identity of the wireless NIC. We show that we can distinguish between NICs manufactured by different vendors and NICs manufactured by the same vendor using their spectral profiles.

  9. Passive Classification of Wireless NICs during Rate Switching

    Directory of Open Access Journals (Sweden)

    Cherita L. Corbett


    Full Text Available Computer networks have become increasingly ubiquitous. However, with the increase in networked applications, there has also been an increase in difficulty to manage and secure these networks. The proliferation of 802.11 wireless networks has heightened this problem by extending networks beyond physical boundaries. We propose the use of spectral analysis to identify the type of wireless network interface card (NIC. This mechanism can be applied to support the detection of unauthorized systems that use NICs which are different from that of a legitimate system. We focus on rate switching, a vaguely specified mechanism required by the 802.11 standard that is implemented in the hardware and software of the wireless NIC. We show that the implementation of this function influences the transmission patterns of a wireless stream, which are observable through traffic analysis. Our mechanism for NIC identification uses signal processing to analyze the periodicity embedded in the wireless traffic caused by rate switching. A stable spectral profile is created from the periodic components of the traffic and used for the identity of the wireless NIC. We show that we can distinguish between NICs manufactured by different vendors and NICs manufactured by the same vendor using their spectral profiles.

  10. A Mach-Zehnder interferometer electro-optic switch with ultralow voltage-length product using poled-polymer/silicon slot waveguide (United States)

    Huang, Xiao-liang; Li, Cui-ting; Dang, Pei-pei; Zheng, Chuan-tao


    By using poled-polymer/silicon slot waveguides in the active region and the Pockels effect of the poled-polymer, we propose a kind of Mach-Zehnder interferometer (MZI) electro-optic (EO) switch operated at 1 550 nm. Structural parameters are optimized for realizing normal switching function. Dependencies of switching characteristics on the slot waveguide parameters are investigated. For the silicon strip with dimension of 170 nm×300 nm, as the slot width varies from 50 nm to 100 nm, the switching voltage can be as low as 1.0 V with active region length of only 0.17-0.35 mm, and the length of the whole device is only about 770-950 μm. The voltage-length product of this switching structure is only 0.17-0.35 V·mm, and it is at least 19-40 times smaller than that of the traditional polymer MZI EO switch, which is 6.69 V·mm. Compared with our previously reported MZI EO switches, this switch exhibits some superior characteristics, including low switching voltage, compact device size and small wavelength dependency.

  11. Five-Level Converter with Low Switching Frequency Applied as DC Voltage Supply

    DEFF Research Database (Denmark)

    Rasmussen, Tonny Wederberg


    This paper describes the use of a multi-level converter as a DC supply. Equations for the converter will be deduced in the nondissipative case. The equations provide solutions to DC voltage and the angle of converter voltage. In addition the spectrum for the harmonics after the elimination...

  12. Impact of threshold voltage variation on 1S1R crossbar array with threshold switching selectors (United States)

    Song, Bing; Xu, Hui; Liu, Haijun; Li, Qingjiang


    It is important that selector achieves voltage compatibility with paired resistive random access memory element. Nevertheless, unsatisfactory uniformity existing in practical selector devices will lead to serious problems during operation. This paper investigates the potential impact of threshold voltage variation on crossbar array with one-selector one-resistor cell. We prove that large variation of threshold voltage may lead to unintentional writing during read process. Therefore, we propose a method to determine selectors' threshold voltage range within 1/2 or 1/3 bias scheme. Results indicate tolerable threshold voltage range basically expands with the increasing OFF-resistance or decreasing ON-resistance of selectors. The proposed method gives a guideline for choosing and fabricating appropriate selectors for RRAM elements with specific parameters.

  13. Analytical Switching Cycle Modeling of Bidirectional High Voltage Flyback Converter for Capacitive Load Considering Core Loss Effect

    DEFF Research Database (Denmark)

    Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.


    With the advancement of material science, various smart materials with intrinsic capacitive property are emerging. The high voltage (HV) power electronics converters with bidirectional energy flow functionality for supplying the capacitive load are highly demanded. A switching cycle based...... of configuration and working principle. Considering the parasitic elements as well as the core loss effect, the converter is modeled with analytical formulas for one switching cycle. The comparison between the model based calculation results and prototype experiments based measurement results are used to validate...... analytical model of HV bidirectional converter driving capacitive load is beneficial in thoroughly understanding the operational behavior, investigating the energy efficiency and optimizing the design. In this paper, a HV bidirectional flyback converter for capacitive load is generally discussed in terms...

  14. Measurement of switching latency in high data rate Ethernet networks


    Hegr, Tomáš; Vozňák, Miroslav; Kozák, Miloš; Boháč, Leoš


    The paper deals with a methodology of switching latency measurement in switched Ethernet networks. The switching latency is parameter necessary for simulation and design of low-latency networks that are often intended for realtime control inherent to many industrial applications. The proposed measurement methodology provides a simple way of switching the latency determination and vendor quoted latency values verification directly at the physical layer. Numerous experimental measurements...

  15. Study of microwave-induced phase switches from the finite voltage state in Bi2Sr2CaCu2Oy intrinsic Josephson junctions (United States)

    Kitano, Haruhisa; Yamaguchi, Ayami; Takahashi, Yusaku; Kakehi, Daiki; Ayukawa, Shin-ya


    We study the microwave-induced phase switches from the finite voltage state for the underdamped intrinsic Josephson junctions (IJJs) made of Bi2Sr2CaCu2Oy (Bi2212). We observe the resonant double-peak structure in the switching current distribution at low temperatures. This feature is successfully explained by a quantum mechanical model where the strong microwave field effectively suppresses the potential barrier for the phase escape from a potential well and the macroscopic quantum tunneling (MQT) is resonantly enhanced. The detailed analyses considering the effects of multiple phase retrapping processes after the phase escape strongly suggest that the intense microwave field suppresses the energy-level spacing in the potential well, by effectively decreasing the fluctuation-free critical current and the Josephson plasma frequency. This effect also reduces the number of photons required for the multiphoton transition between the ground and the first excited states, making it possible to observe the energy level quantization in the MQT state. The temperature dependence of the resonance peak emerging in the switching rate clearly demonstrates that the quantized energy state can be survived up to ~10 K, which is much higher than a crossover temperature predicted by the conventional Caldeira-Leggett theory.

  16. Switch-mode High Voltage Drivers for Dielectric Electro Active Polymer (DEAP) Incremental Actuators

    DEFF Research Database (Denmark)

    Thummala, Prasanth

    voltage DC-DC converters for driving the DEAP based incremental actuators. The DEAP incremental actuator technology has the potential to be used in various industries, e.g., automotive, space and medicine. The DEAP incremental actuator consists of three electrically isolated and mechanically connected...

  17. Series operation of power MOSFETs for high-speed, high-voltage switching applications (United States)

    Baker, R. J.; Johnson, B. P.


    Series operation of power metal-oxide semiconductor field-effect transistors (MOSFETs) to increase their effective hold off voltage is described. The design procedure presented is a modification of a recently reported [Baker and Johnson, Rev. Sci. Instrum. 63, 5799 (1992)] method. Comments are made on implementing MOSFET stacks in various types of instrumentation.

  18. Fast recharge circuit for q-switched lasers (United States)

    Hansen, R. L.


    Cavity-dumped lasers employ electrooptic-effect cell to alternately block and release laser pulse. Cell requires high-speed switching circuit that can apply and remove high voltage. Solid-state circuit employs complementary transistor switches which can switch at rates greater than 5 kHz, eliminate warmup time, provide variable voltage wave-form, and allow polarity reversal.

  19. Nanosecond pulsed power generator for a voltage amplitude up to 300 kV and a repetition rate up to 16 Hz for fine disintegration of quartz

    Energy Technology Data Exchange (ETDEWEB)

    Krastelev, E. G., E-mail:; Sedin, A. A.; Tugushev, V. I. [Russian Academy of Sciences, Joint Institute for High Temperatures (Russian Federation)


    A generator of high-power high-voltage nanosecond pulses is intended for electrical discharge disintegration of mineral quartz and other nonconducting minerals. It includes a 320 kV Marx pulsed voltage generator, a high-voltage glycerin-insulated coaxial peaking capacitor, and an output gas spark switch followed by a load, an electric discharge disintegration chamber. The main parameters of the generator are as follows: a voltage pulse amplitude of up to 300 kV, an output impedance of ≈10 Ω, a discharge current amplitude of up to 25 kA for a half-period of 80–90 ns, and a pulse repetition rate of up to 16 Hz.

  20. A Cell-to-Cell Battery Equalizer With Zero-Current Switching and Zero-Voltage Gap Based on Quasi-Resonant LC Converter and Boost Converter

    DEFF Research Database (Denmark)

    Shang, Yunlong; Zhang, Chenghui; Cui, Naxin


    these difficulties, an innovative direct cell-to-cell battery equalizer based on quasi-resonant LC converter (QRLCC) and boost DC-DC converter (BDDC) is proposed. The QRLCC is employed to gain zero-current switching (ZCS), leading to a reduction of power losses. The BDDC is employed to enhance the equalization......In conventional equalizers, the facts of bulky size and high cost are widespread. Particularly, the zero switching loss and zero-voltage gap (ZVG) between cells are difficult to implement due to the high-frequency hard switching and the voltage drop across power devices. To overcome...... voltage gap for large balancing current and ZVG between cells. Instead of a dedicated equalizer for each cell, only one balancing converter is employed and shared by all cells, reducing the size and implementation cost. Moreover, the equalization current can be regulated as needed by controlling the duty...

  1. A novel design for low insertion loss, multi-band RF-MEMS switch with low pull-in voltage

    Directory of Open Access Journals (Sweden)

    Mahesh Angira


    Full Text Available This paper presents a new type of capacitive shunt RF-MEMS switch. In the proposed design, float metal concept is utilized to reduce the RF overlap area between the movable structure and central conductor of CPW for improving the insertion loss of the device. This has been achieved without affecting the down-state response. Further, float metal also makes the down-state behavior predictable in terms of resonant frequency. For reducing the pull-in voltage, the switch is implemented with cantilever type of structure on either side of the transmission line. This structure also has the capability to inductively tune the isolation optimum value to the different bands and thus can be used in the reconfigurable RF systems. The device shows an insertion loss less than 0.10 dB, a return loss below 36.80 dB up to 25 GHz as compared to 1.00 dB insertion, 7.67 dB return loss for the conventional switch. In the OFF state, proposed device shows two isolation peaks i.e. 48.80 dB at 4.5 GHz and 54.56 dB at 9.7 GHz, when either or both cantilevers are electro-statically actuated to the down-state position respectively. The conventional device has a single isolation peak in the X-band. In addition, improvement of around 3 times in the bandwidth has also been achieved. The designed switch can be used at device and sub-system level for the future multi-band communication applications.

  2. Gate voltage modulation of spin-Hall-torque-driven magnetic switching


    Liu, Luqiao; Pai, Chi-Feng; Ralph, D. C.; Buhrman, R. A.


    Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA). Spin transfer torque is in widespread development as the write mechanism for next-generation magnetic memory, while VCMA offers the potential of even better energy performance due to smaller Ohmic losses. Here we introduce a 3-terminal magnetic tunnel junc...

  3. Switch wear leveling (United States)

    Wu, Hunter; Sealy, Kylee; Gilchrist, Aaron


    An apparatus for switch wear leveling includes a switching module that controls switching for two or more pairs of switches in a switching power converter. The switching module controls switches based on a duty cycle control technique and closes and opens each switch in a switching sequence. The pairs of switches connect to a positive and negative terminal of a DC voltage source. For a first switching sequence a first switch of a pair of switches has a higher switching power loss than a second switch of the pair of switches. The apparatus includes a switch rotation module that changes the switching sequence of the two or more pairs of switches from the first switching sequence to a second switching sequence. The second switch of a pair of switches has a higher switching power loss than the first switch of the pair of switches during the second switching sequence.

  4. Identification of problems when using long high voltage AC cable in transmission system I: Switching transient problems

    DEFF Research Database (Denmark)

    Rahimi, Saeed; Wiechowski, W.; Randrup, M


    Due to political and environmental pressures from the public and government side, upgrading and building new transmission facilities are becoming more and more difficult and in some cases the expansion of overhead transmission lines are impossible. This means that underground cable technology...... is the proper substitution and solution which make the transmission expansion possible with minimized visual impacts on the communities. Within European countries, Denmark was been at the forefront of replacing the transmission lines with cables. The project was supplying the power to the greater Copenhagen...... share of long HV underground cables. The end goal will be a guideline to special solutions and precautions to avoid dangerous over voltage problems and also resonance problems in a transmission network with future increased share of cables. Two major categories of problems are switching transient...

  5. Soft switched DC-DC converter (United States)

    Subramanian, K.; Kavitha, K. V. N.; Saravanan, K.


    A soft switched single switch isolated dc-dc conveys proposed in this paper. This converter works on the principle of zero current switching (zcs) and zero voltage switching (zvs). The circuit comprises lossless snubber with low rating. The switch works on zcs during turn on and zvs during turnoff. The diodes are based on zcs turn on and turnoff conditions. This paper presents the concept of soft switching and its applications to dc-dc converter. The losses due to soft switching and hard switching are compared.

  6. Empiric analysis of zero voltage switching in piezoelectric transformer based resonant converters

    DEFF Research Database (Denmark)

    Rødgaard, Martin Schøler; Andersen, Thomas; Andersen, Michael A. E.


    Research and development within piezoelectric transformer (PT) based converters are rapidly increasing, as the technology is maturing and starts to prove its capabilities. High power density and high efficiencies are reported and recently several inductor-less converters have emerged [1...... is to derive a simple expression of the maximal obtainable soft switching capability (ZVS factor), for a specific PT design, assuming a matched load. The expression has been derived through series of parametric sweep simulations of the inductor-less half-bridge topology, which revealed that a linearization...

  7. Restraint Method of Voltage Total Harmonic Distortion in Distribution Network by Power Conditioner Systems using Measured Data from IT Switches (United States)

    Kawasaki, Shoji; Shimoda, Kazuki; Tanaka, Motohiro; Taoka, Hisao; Matsuki, Junya; Hayashi, Yasuhiro

    Recently, the amount of distributed generation (DG) such as photovoltaic system and wind power generator system installed in a distribution system has been increasing because of reduction of the effects on the environment. However, the harmonic troubles in the distribution system are apprehended in the background of the increase of connection of DGs through the inverters and the spread of power electronics equipment. In this paper, the authors propose a restraint method of voltage total harmonic distortion (THD) in a whole distribution network by active filter (AF) operation of plural power conditioner systems (PCS). Moreover, the authors propose a determination method of the optimal gain of AF operation so as to minimize the maximum value of voltage THD in the distribution network by the real-time feedback control with measured data from the information technology (IT) switches. In order to verify the validity of the proposed method, the numerical calculations are carried out by using an analytical model of distribution network interconnected DGs with PCS.

  8. Voltage-induced switching dynamics based on an AZO/VO2/AZO sandwiched structure (United States)

    Xiao, Han; Li, Yi; Fang, Baoying; Wang, Xiaohua; Liu, Zhimin; Zhang, Jiao; Li, Zhengpeng; Huang, Yaqin; Pei, Jiangheng


    A vanadium dioxide (VO2) thin film was prepared on an Al-doped ZnO (AZO) conductive glass substrate by DC magnetron sputtering and a post-annealing process. The AZO/VO2/AZO sandwiched structure was fabricated on the VO2/AZO composite film using photolithography and a chemical etching process. The composition, microstructure and optical properties of the VO2/AZO composite film were tested. The results showed that the VO2/AZO composite film was poly-crystalline and the AZO layer did not change the preferred growth orientation of VO2. When the voltage was applied on both of the transparent conductive layers of the AZO/VO2/AZO sandwiched structure, an abrupt change in the current was observed at different temperatures. The temperature dependence of I-V characteristic curves for the AZO/VO2/AZO sandwiched structure was analyzed. The phase transition voltage value is 7.5 V at 20 °C and decreases with increasing temperature.

  9. Ferroresonance in 220/420-kV-voltage transformers during switching; Ferroresonanz an 220/420-kV-Spannungswandlern bei Schalthandlungen

    Energy Technology Data Exchange (ETDEWEB)

    Braeunlich, R. [Fachkommission fuer Hochspannungsfragen (FKH), Zurich (Switzerland); Daeumling, H. [Ritz Messwandler (Germany). Bereich Entwicklung, Qualitaetsmanagement und Prueffelder; Hofstetter, M. [Elektrizitaetswerk der Stadt Zuerich (EWZ) (Switzerland). Abt. Projektierung und Bau Unterwerke; Prucker, U. [Trench-Germany GmbH (Germany); Schmid, J. [Trench Switzerland AG, Basel (Switzerland); Minkner, R. [Trench Switzerland AG, Basel (Switzerland); Haefely AG, Basel (Switzerland); Hochschule fuer Technik und Informatik, Burgdorf (Switzerland); Schlierf, H.W. [RWE Transportnetz Strom GmbH (Germany). Abt. fuer Hochspannungsbetriebsmittel


    Ferroresonances occure usually in small from grid decoupled parts of a switch device and its circuits. Due to capacitive coupling by the grid voltage a manyfold of complex and nonlinear oscillations are affected if the transformer kernel is saturated. In this contribution a complex three-phase ferroresonance process is described and remedy measures are presented. (GL)


    Energy Technology Data Exchange (ETDEWEB)

    Frolov, D. [Fermilab; Pfeffer, H. [Fermilab; Saewert, G. [Fermilab


    Using recently available GaN FETs, a 600 Volt three- stage, multi-FET switch has been developed having 2 nanosecond rise time driving a 200 Ohm load with the potential of approaching 30 MHz average switching rates. Possible applications include driving particle beam choppers kicking bunch-by-bunch and beam deflectors where the rise time needs to be custom tailored. This paper reports on the engineering issues addressed, the design approach taken and some performance results of this switch.

  11. Modeling Populations of Thermostatic Loads with Switching Rate Actuation

    DEFF Research Database (Denmark)

    Totu, Luminita Cristiana; Wisniewski, Rafal; Leth, John-Josef


    We model thermostatic devices using a stochastic hybrid description, and introduce an external actuation mechanism that creates random switch events in the discrete dynamics. We then conjecture the form of the Fokker-Planck equation and successfully verify it numerically using Monte Carlo...

  12. A generalized discontinuous PWM based neutral point voltage balancing method for three-level NPC voltage source inverter with switching losses reduction

    DEFF Research Database (Denmark)

    Li, Kai; Wei, Min; Xie, Chuan


    In order to control the neutral point voltage of inverter with discontinuous PWM (DPWM), this paper proposed a generalized discontinuous PWM (GDPWM) based neutral point voltage balancing method for three level neutral point clamped (NPC) voltage source inverter (VSI). Firstly, a triangle carrier ...

  13. Voltage affects the dissociation rate constant of the m2 muscarinic receptor.

    Directory of Open Access Journals (Sweden)

    Yair Ben Chaim

    Full Text Available G-protein coupled receptors (GPCRs comprise the largest protein family and mediate the vast majority of signal transduction processes in the body. Until recently GPCRs were not considered to be voltage dependent. Newly it was shown for several GPCRs that the first step in GPCR activation, the binding of agonist to the receptor, is voltage sensitive: Voltage shifts the receptor between two states that differ in their binding affinity. Here we show that this shift involves the rate constant of dissociation. We used the m2 muscarinic receptor (m2R a prototypical GPCR and measured directly the dissociation of [(3H]ACh from m2R expressed Xenopus oocytes. We show, for the first time, that the voltage dependent change in affinity is implemented by voltage shifting the receptor between two states that differ in their rate constant of dissociation. Furthermore, we provide evidence that suggest that the above shift is achieved by voltage regulating the coupling of the GPCR to its G protein.

  14. The Rated Voltage Determination of DC Building Power Supply System Considering Human Beings Safety (United States)

    Wang, Zhicheng; Yu, Kansheng; Xie, Guoqiang; Zou, Jin


    Generally two-level voltages are adopted for DC building power supply system. From the point of view of human beings safety, only the lower level voltage which may be contacted barehanded is discussed in this paper based on the related safety thresholds of human beings current effect. For several voltage levels below 100V recommended by IEC, the body current and current density of human electric shock under device normal work condition, as well as effect of unidirectional single impulse currents of short durations are calculated and analyzed respectively. Finally, DC 60V is recommended as the lower level rating voltage through the comprehensive consideration of technical condition and cost of safety criteria.

  15. Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale (United States)

    Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng


    Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

  16. Flexible-rate optical packet generation/detection and label swapping for optical label switching networks (United States)

    Wu, Zhongying; Li, Juhao; Tian, Yu; Ge, Dawei; Zhu, Paikun; Chen, Yuanxiang; Chen, Zhangyuan; He, Yongqi


    In recent years, optical label switching (OLS) gains lots of attentions due to its intrinsic advantages to implement protocol, bit-rate, granularity and data format transparency packet switching. In this paper, we propose a novel scheme to realize flexible-rate optical packet switching for OLS networks. At the transmitter node, flexible-rate packet is generated by parallel modulating different combinations of optical carriers generated from the optical multi-carrier generator (OMCG), among which the low-speed optical label occupies one carrier. At the switching node, label is extracted and re-generated in label processing unit (LPU). The payloads are switched based on routing information and new label is added after switching. At the receiver node, another OMCG serves as local oscillators (LOs) for optical payloads coherent detection. The proposed scheme offers good flexibility for dynamic optical packet switching by adjusting the payload bandwidth and could also effectively reduce the number of lasers, modulators and receivers for packet generation/detection. We present proof-of-concept demonstrations of flexible-rate packet generation/detection and label swapping in 12.5 GHz grid. The influence of crosstalk for cascaded label swapping is also investigated.

  17. Effect of pulsed corona discharge voltage and feed gas flow rate on dissolved ozone concentration

    Energy Technology Data Exchange (ETDEWEB)

    Prasetyaningrum, A., E-mail:; Ratnawati,; Jos, B. [Department of Chemical Engineering, Faculty of Engineering, Diponegoro University Jl. Prof. H. Soedarto Tembalang, Semarang, Central Java, Indonesia, 50276 (Indonesia)


    Ozonization is one of the methods extensively used for water purification and degradation of organic materials. Ozone (O{sub 3}) is recognized as a powerful oxidizing agent. Due to its strong oxidability and better environmental friendless, ozone increasing being used in domestic and industrial applications. Current technology in ozone production utilizes several techniques (corona discharge, ultra violet radiation and electrolysis). This experiment aimed to evaluating effect of voltage and gas flow rate on ozone production with corona discharge. The system consists of two net-type stainless steel electrode placed in a dielectric barrier. Three pulsed voltage (20, 30, 40 KV) and flow rate (5, 10, 15 L/min) were prepare for operation variable at high frequency (3.7 kHz) with AC pulsed power supply. The dissolved ozone concentration depends on the applied high-voltage level, gas flow rate and the discharge exposure duration. The ozone concentration increases with decreasing gas flow rate. Dissolved ozone concentrations greater than 200 ppm can be obtained with a minimum voltage 40 kV.

  18. Ultra-low voltage resistive switching of HfO2 buffered (001) epitaxial NiO films deposited on metal seed layers (United States)

    Qiu, X. Y.; Wang, R. X.; Zhang, Z.; Wei, M. L.; Ji, H.; Chai, Y.; Zhou, F. C.; Dai, J. Y.; Zhang, T.; Li, L. T.; Meng, X. S.


    A set of (001) epitaxial NiO films were prepared on highly textured (001) Pt seed layers using magnetron sputtering, and their resistive switching performance was measured. Cube-to-cube epitaxial relationships of NiO(001)//Pt(001) and NiO[001]//Pt[001] were demonstrated. Current-voltage measurements revealed that the Ag/(001)NiO/(001)Pt capacitor structures exhibited stable bipolar switching behavior with an ON/OFF ratio of 20 and an endurance of over 5 × 103 cycles. Furthermore, inserting a HfO2 buffer layer between the NiO film and the Ag top electrode increased the ON/OFF ratio to more than 103 and reduced the SET/RESET voltage to below ±0.2 V. These enhancements are attributed to the differing filament growth mechanisms that occur in the NiO and HfO2 layers. The present work suggests that Ag/HfO2/(001)NiO/(001)Pt capacitor structures are a promising technology for next-generation, ultra-low voltage resistive switching memory.

  19. Avalanche mode of high-voltage overloaded p{sup +}–i–n{sup +} diode switching to the conductive state by pulsed illumination

    Energy Technology Data Exchange (ETDEWEB)

    Kyuregyan, A. S., E-mail: [Lenin All-Russia Electrical Engineering Institute (Russian Federation)


    A simple analytical theory of the picosecond switching of high-voltage overloaded p{sup +}–i–n{sup +} photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs.

  20. Isolated DC-DC Converter for Bidirectional Power Flow Controlling with Soft-Switching Feature and High Step-Up/Down Voltage Conversion

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen


    Full Text Available In this paper, a novel isolated bidirectional DC-DC converter is proposed, which is able to accomplish high step-up/down voltage conversion. Therefore, it is suitable for hybrid electric vehicle, fuel cell vehicle, energy backup system, and grid-system applications. The proposed converter incorporates a coupled inductor to behave forward-and-flyback energy conversion for high voltage ratio and provide galvanic isolation. The energy stored in the leakage inductor of the coupled inductor can be recycled without the use of additional snubber mechanism or clamped circuit. No matter in step-up or step-down mode, all power switches can operate with soft switching. Moreover, there is a inherit feature that metal–oxide–semiconductor field-effect transistors (MOSFETs with smaller on-state resistance can be adopted because of lower voltage endurance at primary side. Operation principle, voltage ratio derivation, and inductor design are thoroughly described in this paper. In addition, a 1-kW prototype is implemented to validate the feasibility and correctness of the converter. Experimental results indicate that the peak efficiencies in step-up and step-down modes can be up to 95.4% and 93.6%, respectively.

  1. Voltage-controlled low-energy switching of nanomagnets through Ruderman-Kittel-Kasuya-Yosida interactions for magnetoelectric device applications (United States)

    Ghosh, Bahniman; Dey, Rik; Register, Leonard F.; Banerjee, Sanjay K.


    In this article, we consider through simulation low-energy switching of nanomagnets via electrostatically gated inter-magnet Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions on the surface of three-dimensional topological insulators, for possible memory and nonvolatile logic applications. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Potential applications to both memory and nonvolatile logic are illustrated. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets, but the approach also appears compatible with the use of antiferromagnets which may allow for faster switching.

  2. Psilocybin links binocular rivalry switch rate to attention and subjective arousal levels in humans. (United States)

    Carter, Olivia L; Hasler, Felix; Pettigrew, John D; Wallis, Guy M; Liu, Guang B; Vollenweider, Franz X


    Binocular rivalry occurs when different images are simultaneously presented to each eye. During continual viewing of this stimulus, the observer will experience repeated switches between visual awareness of the two images. Previous studies have suggested that a slow rate of perceptual switching may be associated with clinical and drug-induced psychosis. The objective of the study was to explore the proposed relationship between binocular rivalry switch rate and subjective changes in psychological state associated with 5-HT2A receptor activation. This study used psilocybin, the hallucinogen found naturally in Psilocybe mushrooms that had previously been found to induce psychosis-like symptoms via the 5-HT2A receptor. The effects of psilocybin (215 microg/kg) were considered alone and after pretreatment with the selective 5-HT2A antagonist ketanserin (50 mg) in ten healthy human subjects. Psilocybin significantly reduced the rate of binocular rivalry switching and increased the proportion of transitional/mixed percept experience. Pretreatment with ketanserin blocked the majority of psilocybin's "positive" psychosis-like hallucinogenic symptoms. However, ketanserin had no influence on either the psilocybin-induced slowing of binocular rivalry or the drug's "negative-type symptoms" associated with reduced arousal and vigilance. Together, these findings link changes in binocular rivalry switching rate to subjective levels of arousal and attention. In addition, it suggests that psilocybin's effect on binocular rivalry is unlikely to be mediated by the 5-HT2A receptor.

  3. WECS Based Self-Excited Squirrel-Cage Induction Generator with Reduced Voltage Source Inverter Rating

    Directory of Open Access Journals (Sweden)

    O.Chandra sekha


    Full Text Available This paper presents the regulation of the voltage and frequency of a stand-alone fixed-pitch wind energy conversion system (WECS based on a self-excited squirrel-cage induction machine. A shunt connected voltage source inverter (VSI and a controllable dump load are used for regulation purposes. A battery bank is included in the dc side of the VSI so that it can absorb and inject active power thus increasing the efficiency and availability of the system. A control scheme for the VSI with self-governing control of real and reactive power allows the state of charge of the batteries to be kept in a safe range while maximizing the voltage regulating capabilities of the VSI. The characteristics of the wind turbine, selfexcited generator, and the ratings of the VSI are considered in order to find out the load range for which voltage and frequency can be regulated for a given wind speed range. The possibility of the proposed system is verified by MATLAB/SIMULINK. simulations.

  4. Temperature-Independent Switching Rates for a Random Telegraph Signal in a Silicon Metal-Oxide-Semiconductor Field-Effect Transistor at Low Temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Borland, Nick; Fleetwood, D.M.; Scofield, John H.


    We have observed discrete random telegraph signals (RTS'S) in the drain voltages of three, observed above 30 K were thermally activated. The switching rate for the only RTS observed below 30 K was thermally activated above 30 K but temperature-independent below 10 K. To our knowledge, this cross-over from thermal activation to tunneling behavior has not been previously observed for RTS's Metal-oxide-semiconductor field-effect transistors (MCEWETS) often exhibit relatively large levels of low-frequency (1/fl noise) [1,2]. Much evidence suggests that this noise is related to the capture all cases, switching rates have been thermally activated, often with different activation energies for capture and/or emission is accompanied by lattice relaxation. Though thermally activated behavior has sufficiently low temperatures [7,9]. While not observed in MOSFETS, cross-over from thermal activation to configurational tunneling has been observed for RTS's in junctions [13]. drain voltage was observed to randomly switch between two discrete levels, designated as Vup and Vdn, similar to RTS's reported by others [2,7'- 11 ]. We have characterized six RTS `S for temperatures above 30 K where thermally activated switching rates are observed. The properties of five of these have been the trap, i.e., the mean time a captured charge carrier spends in the trap before it is emitted. Similarly, we identify the mean time in the low resistance state ( trup in state Vup) as the capture time rc. F@ure 1 shows a typical time trace of the drain-voltage fluctuation &d(t)= Vd(t)+Vd>. This indicate that both the mean capture and emission times become independent of Tat low temperatures and where a= capture or emission, is temperature independent. The solid curve in Figure 3(a) (mean capture time) was obtained using a weighted nonlinear charge carriers are not in thermal equilibrium with the lattice, i.e., that while the lattice is being cooled Instead, we believe that the

  5. New measure selection for Hunt-Devolder semi-Markov regime switching interest rate models (United States)

    Preda, Vasile; Dedu, Silvia; Sheraz, Muhammad


    In this paper we construct the minimal entropy martingale for semi-Markov regime switching interest rate models using some general entropy measures. We prove that, for the one-period model, the minimal entropy martingale for semi-Markov processes in the case of the Tsallis and Kaniadakis entropies are the same as in the case of Shannon entropy.

  6. Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height (United States)

    Inokuchi, T.; Yoda, H.; Kato, Y.; Shimizu, M.; Shirotori, S.; Shimomura, N.; Koi, K.; Kamiguchi, Y.; Sugiyama, H.; Oikawa, S.; Ikegami, K.; Ishikawa, M.; Altansargai, B.; Tiwari, A.; Ohsawa, Y.; Saito, Y.; Kurobe, A.


    A hybrid writing scheme that combines the spin Hall effect and voltage-controlled magnetic-anisotropy effect is investigated in Ta/CoFeB/MgO/CoFeB/Ru/CoFe/IrMn junctions. The write current and control voltage are applied to Ta and CoFeB/MgO/CoFeB junctions, respectively. The critical current density required for switching the magnetization in CoFeB was modulated 3.6-fold by changing the control voltage from -1.0 V to +1.0 V. This modulation of the write current density is explained by the change in the surface anisotropy of the free layer from 1.7 mJ/m2 to 1.6 mJ/m2, which is caused by the electric field applied to the junction. The read disturb rate and write error rate, which are important performance parameters for memory applications, are drastically improved, and no error was detected in 5 × 108 cycles by controlling read and write sequences.

  7. 78 FR 16495 - Switch Energy LLC; Supplemental Notice That Initial Market-Based Rate Filing Includes Request for... (United States)


    ... From the Federal Register Online via the Government Publishing Office DEPARTMENT OF ENERGY Federal Energy Regulatory Commission Switch Energy LLC; Supplemental Notice That Initial Market-Based Rate Filing...-referenced proceeding, of Switch Energy LLC's application for market-based rate authority, with an...

  8. High-efficient discharge-pumped ArF (193 nm) excimer laser with a TPI thyratron as a high-voltage switch (United States)

    Razhev, Alexander M.; Zhupikov, Andrey A.; Churkin, Dmitry S.


    The results of using the thyratron of the TPI series (pseudo spark gap) as a high-voltage switch in the excitation system of ArF (193 nm) excimer laser are presented. The excitation system of the LC-inverter type based on TPI 10k/20 thyratron in absence of any non-linear elements was developed. An experimental investigation of the energy and temporal parameters of the pumping and lasing for ArF laser on the He:Ar:F II mixture with excitation system developed was carried out. The comparative analysis of the ArF laser pumping and radiation parameters in dependence of the high-voltage switch type such as a standard spark gap RU-65, and thyratron TPI 10k/20 was performed. The output radiation energy for a laser with thyratron TPI 10k/20 was obtained to be of 1.4 times higher than that with standard spark gap RU-65 at the same pumping conditions. Such increase the output energy was shown to be achieving owing to higher level of the pumping intensity due to higher voltage on the discharge gap that occurs due to lower energy losses into TPI thyratron in comparison with the RU- 65 spark gap and leads to more efficient energy transfer from storage to discharge circuit. As a result for ArF laser with TPI thyratron in He:Ar:F II mixture the output radiation energy of 1.0 J with the total efficiency of 1.7% has been achieved. The advantages of using the TPI thyratron in the excitation system of the ArF excimer laser over spark gap are described.

  9. Medium voltage switch rooms supporting the internal arc test; Cubiculos de media tensao que suportam o ensaio de arco interno

    Energy Technology Data Exchange (ETDEWEB)

    Cintra, Paulo de Brito [Light Servicos de Eletricidade SA, Rio de Janeiro, RJ (Brazil). E-mail:; Costa, Eleison S. [Centro de Pesquisas de Energia Eletrica, Rio de Janeiro, RJ (Brazil); Tanakai, Osmar [Siemens Ltda., Sao Paulo, SP (Brazil)


    This paper presents the trends and standards for project of construction of shielded switchgear and control gear aiming the switch room capability of supporting an internal arc, and shows the research and development of new solutions resulting from the project and maintenance engineering, aiming the reduction of the failure possibilities and guarantee the personal safety even they occurs.


    Directory of Open Access Journals (Sweden)



    Full Text Available Optical packet switching (OPS is a very promising technology for the next generation data transfer due to the very large bandwidth of the optical fiber. The success of the OPS relies heavily on design of the node architecture which supports comparatively larger buffering capacity without detiorating signal quality too much and it should provide very low packet loss probability with reasonably low average delay. In this paper, a design analysis of low complexity OPS node architecture is discussed along-with its advantages. The presented architecture support both fixed and variable length packets. The packets are stored in a single piece of fiber using the WDM technology. Physical layer analysis presented in this paper is to obtain the Q function (Bit Error Rate. Finally, the Monte Carlo simulation is done to obtain the packet loss. The average delay performance of the switch and effect of Q values on packet loss rates are discussed.

  11. Design and implementation of a bidirectional current-controlled voltage-regulated DC-DC switched-mode converter

    CSIR Research Space (South Africa)

    Coetzer, A


    Full Text Available The design and implementation of a bidirectional current-controlled voltage-regulated DC-DC converter is presented. The converter is required to connect a battery of electrochemical cells (the battery) to an asynchronous motor-drive unit via a...

  12. A High Resolution Switched Capacitor 1bit Sigma-Delta Modulator for Low-Voltage/Low-Power Applications

    DEFF Research Database (Denmark)

    Furst, Claus Efdmann


    A high resolution 1bit Sigma-Delta modulator for low power/low voltage applications is presented. The modulator operates at a supply of 1-1.5V, the current drain is 0.1mA. The maximum resolution is 87dB equivalent to 14 bits of resolution. This is achieved with a signal-band of 5kHz, over...

  13. Single Longitudinal Mode, High Repetition Rate, Q-switched Ho:YLF Laser for Remote Sensing (United States)

    Bai, Yingxin; Yu, Jirong; Petzar, Paul; Petros, M.; Chen, Songsheng; Trieu, Bo; Lee, Nyung; Singh, U.


    Ho:YLF/LuLiF lasers have specific applications for remote sensing such as wind-speed measurement and carbon dioxide (CO2) concentration measurement in the atmosphere because the operating wavelength (around 2 m) is located in the eye-safe range and can be tuned to the characteristic lines of CO2 absorption and there is strong backward scattering signal from aerosol (Mie scattering). Experimentally, a diode pumped Ho:Tm:YLF laser has been successfully used as the transmitter of coherent differential absorption lidar for the measurement of with a repetition rate of 5 Hz and pulse energy of 75 mJ [1]. For highly precise CO2 measurements with coherent detection technique, a laser with high repetition rate is required to averaging out the speckle effect [2]. In addition, laser efficiency is critically important for the air/space borne lidar applications, because of the limited power supply. A diode pumped Ho:Tm:YLF laser is difficult to efficiently operate in high repetition rate due to the large heat loading and up-conversion. However, a Tm:fiber laser pumped Ho:YLF laser with low heat loading can be operated at high repetition rates efficiently [3]. No matter whether wind-speed or carbon dioxide (CO2) concentration measurement is the goal, a Ho:YLF/LuLiF laser as the transmitter should operate in a single longitudinal mode. Injection seeding is a valid technique for a Q-switched laser to obtain single longitudinal mode operation. In this paper, we will report the new results for a single longitudinal mode, high repetition rate, Q-switched Ho:YLF laser. In order to avoid spectral hole burning and make injection seeding easier, a four mirror ring cavity is designed for single longitudinal mode, high repetition rate Q-switched Ho:YLF laser. The ramp-fire technique is chosen for injection seeding.

  14. Transitions in genetic toggle switches driven by dynamic disorder in rate coefficients (United States)

    Chen, Hang; Thill, Peter; Cao, Jianshu


    In biochemical systems, intrinsic noise may drive the system switch from one stable state to another. We investigate how kinetic switching between stable states in a bistable network is influenced by dynamic disorder, i.e., fluctuations in the rate coefficients. Using the geometric minimum action method, we first investigate the optimal transition paths and the corresponding minimum actions based on a genetic toggle switch model in which reaction coefficients draw from a discrete probability distribution. For the continuous probability distribution of the rate coefficient, we then consider two models of dynamic disorder in which reaction coefficients undergo different stochastic processes with the same stationary distribution. In one, the kinetic parameters follow a discrete Markov process and in the other they follow continuous Langevin dynamics. We find that regulation of the parameters modulating the dynamic disorder, as has been demonstrated to occur through allosteric control in bistable networks in the immune system, can be crucial in shaping the statistics of optimal transition paths, transition probabilities, and the stationary probability distribution of the network.

  15. FPGA-based voltage and current dual drive system for high frame rate electrical impedance tomography. (United States)

    Khan, Shadab; Manwaring, Preston; Borsic, Andrea; Halter, Ryan


    Electrical impedance tomography (EIT) is used to image the electrical property distribution of a tissue under test. An EIT system comprises complex hardware and software modules, which are typically designed for a specific application. Upgrading these modules is a time-consuming process, and requires rigorous testing to ensure proper functioning of new modules with the existing ones. To this end, we developed a modular and reconfigurable data acquisition (DAQ) system using National Instruments' (NI) hardware and software modules, which offer inherent compatibility over generations of hardware and software revisions. The system can be configured to use up to 32-channels. This EIT system can be used to interchangeably apply current or voltage signal, and measure the tissue response in a semi-parallel fashion. A novel signal averaging algorithm, and 512-point fast Fourier transform (FFT) computation block was implemented on the FPGA. FFT output bins were classified as signal or noise. Signal bins constitute a tissue's response to a pure or mixed tone signal. Signal bins' data can be used for traditional applications, as well as synchronous frequency-difference imaging. Noise bins were used to compute noise power on the FPGA. Noise power represents a metric of signal quality, and can be used to ensure proper tissue-electrode contact. Allocation of these computationally expensive tasks to the FPGA reduced the required bandwidth between PC, and the FPGA for high frame rate EIT. In 16-channel configuration, with a signal-averaging factor of 8, the DAQ frame rate at 100 kHz exceeded 110 frames s (-1), and signal-to-noise ratio exceeded 90 dB across the spectrum. Reciprocity error was found to be for frequencies up to 1 MHz. Static imaging experiments were performed on a high-conductivity inclusion placed in a saline filled tank; the inclusion was clearly localized in the reconstructions obtained for both absolute current and voltage mode data.

  16. Dynamically Switching among Bundled and Single Tickets with Time-Dependent Demand Rates

    Directory of Open Access Journals (Sweden)

    Serhan Duran


    Full Text Available The most important market segmentation in sports and entertainment industry is the competition between customers that buy bundled and single tickets. A common selling practice is starting the selling season with bundled ticket sales and switching to selling single tickets later on. The aim of this practice is to increase the number of customers that buy bundles, which in return increases the load factor of the events with low demand. In this paper, we investigate the effect of time dependent demand on dynamic switching times from bundled to single ticket sales and the potential revenue gain over the case where the demand rate of events is assumed to be constant with time.

  17. Zero-Voltage Switching PWM Strategy Based Capacitor Current-Balancing Control for Half-Bridge Three-Level DC/DC Converter

    DEFF Research Database (Denmark)

    Liu, Dong; Deng, Fujin; Zhang, Qi


    The current imbalance among the two input capacitors is one of the important issues of the half-bridge threelevel (HBTL) DC/DC converter, which would affect system performance and reliability. In this paper, a zero-voltage switching (ZVS) pulse-wide modulation (PWM) strategy including two operation...... modes is proposed. Based on the proposed ZVS PWM strategy, a capacitor current-balancing control is proposed for the HBTL DC/DC converter, where the currents on the two input capacitors can be kept balanced by alternating the two operation modes of the proposed ZVS PWM strategy. Therefore, the proposed...... control strategy can improve the performance and reliability of the converter in the aspect of balancing the thermal stresses and lifetimes among the two input capacitors. Finally, simulation and experimental studies are conducted and results verify the proposed control strategy....

  18. Enhanced control of the ionization rate in radio-frequency plasmas with structured electrodes via tailored voltage waveforms (United States)

    Doyle, Scott J.; Lafleur, Trevor; Gibson, Andrew R.; Tian, Peng; Kushner, Mark J.; Dedrick, James


    Radio-frequency capacitively coupled plasmas that incorporate structured electrodes enable increases in the electron density within spatially localized regions through the hollow cathode effect (HCE). This enables enhanced control over the spatial profile of the plasma density, which is useful for several applications including materials processing, lighting and spacecraft propulsion. However, asymmetries in the powered and grounded electrode areas inherent to the hollow cathode geometry lead to the formation of a time averaged dc self-bias voltage at the powered electrode. This bias alters the energy and flux of secondary electrons leaving the surface of the cathode and consequentially can moderate the increased localized ionization afforded by the hollow cathode discharge. In this work, two-dimensional fluid-kinetic simulations are used to demonstrate control of the dc self-bias voltage in a dual-frequency driven (13.56, 27.12 MHz), hollow cathode enhanced, capacitively coupled argon plasma over the 66.6–200 Pa (0.5–1.5 Torr) pressure range. By varying the phase offset of the 27.12 MHz voltage waveform, the dc self-bias voltage varies by 10%–15% over an applied peak-to-peak voltage range of 600–1000 V, with lower voltages showing higher modulation. Resulting ionization rates due to secondary electrons within the hollow cathode cavity vary by a factor of 3 at constant voltage amplitude, demonstrating the ability to control plasma properties relevant for maintaining and enhancing the HCE.

  19. Fast simulation of packet loss rates in a shared buffer communications switch (United States)

    Chang, Cheng-Shang; Heidelberger, Philip; Shahabuddin, Perwez


    This paper describes an efficient technique for estimating, via simulation, the probability of buffer overflows in a queueing model that arises in the analysis of ATM (Asynchronous Transfer Mode) communication switches. There are multiple streams of (autocorrelated) traffic feeding the switch that has a buffer of finite capacity. Each stream is designated as either being of high or low priority. When the queue length reaches a certain threshold, only high priority packets are admitted to the switch's buffer. The problem is to estimate the loss rate of high priority packets. An asymptotically optimal importance sampling approach is developed for this rare event simulation problem. In this approach, the importance sampling is done in two distinct phases. In the first phase, an importance sampling change of measure is used to bring the queue length up to the threshold at which low priority packets get rejected. In the second phase, a different importance sampling change of measure is used to move the queue length from the threshold to the buffer capacity.

  20. Design of DC-contact RF MEMS switch with temperature stability

    Directory of Open Access Journals (Sweden)

    Junfeng Sun


    Full Text Available In order to improve the temperature stability of DC-contact RF MEMS switch, a thermal buckle-beam structure is implemented. The stability of the switch pull-in voltage versus temperature is not only improved, but also the impact of stress and stress gradient on the drive voltage is suppressed. Test results show that the switch pull-in voltage is less sensitive to temperature between -20 °C and 100 °C. The variable rate of pull-in voltage to temperature is about -120 mV/°C. The RF performance of the switch is stable, and the isolation is almost independent of temperature. After being annealed at 280 °C for 12 hours, our switch samples, which are suitable for packaging, have less than 1.5% change in the rate of pull-in voltage.

  1. Voltage triggered resistance switching in two terminal VO2 nano-junctions fabricated by electron-beam lithography (United States)

    Gopalakrishnan, Gokul; Ruzmetov, Dmitry; Ko, Changhyun; Narayanamurti, Venkatesh; Ramanathan, Shriram


    Vanadium dioxide (VO2) thin films have been shown to undergo an abrupt decrease in resistivity, both in response to increasing temperature as well as an increasing electric field. The ultra-fast electrically triggered transition has made VO2 an exciting platform to explore a range of potential applications, from high speed switches to memory elements. Particularly valuable to such investigation is characterization of the electronic properties of VO2 thin films, in which transport is additionally constrained within nanoscale dimensions along the in-plane directions. In this poster, we describe the results of transport measurements on VO2 nanojunctions grown on a conductive substrate and patterned by electron-beam lithography. We analyze the out-of-plane I-V data and present a detailed discussion on electron transport mechanisms and on the origin behind the electrically triggered conductivity jumps that we observe in these nano-junctions.

  2. Dual-Input Soft-Switched DC-DC Converter with Isolated Current-Fed Half-Bridge and Voltage-Fed Full-Bridge for Fuel Cell or Photovoltaic Systems

    DEFF Research Database (Denmark)

    Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.


    This paper introduces a new zero-voltage-switching (ZVS) isolated DC-DC converter with two input ports which can be utilized in hybrid energy systems, for instance, in a fuel cell and super-capacitor system. By fully using two high frequency transformers, the proposed converter can effectively...

  3. Switching synchronization in one-dimensional memristive networks: An exact solution (United States)

    Slipko, V. A.; Pershin, Y. V.


    We study a switching synchronization phenomenon taking place in one-dimensional memristive networks when the memristors switch from the high- to low-resistance state. It is assumed that the distributions of threshold voltages and switching rates of memristors are arbitrary. Using the Laplace transform, a set of nonlinear equations describing the memristors dynamics is solved exactly, without any approximations. The time dependencies of memristances are found, and it is shown that the voltage falls across memristors are proportional to their threshold voltages. A compact expression for the network switching time is derived.

  4. Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators (United States)

    Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.


    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  5. Shunt capacitors for a.c. power systems having a rated voltage above 1000 V - Part 1: General

    CERN Document Server

    International Electrotechnical Commission. Geneva


    This part of IEC 60871 is applicable to both capacitor units and capacitor banks intended to be used, particularly, for power-factor correction of a.c. power systems having a rated voltage above 1 000 V and frequencies of 15 Hz to 60 Hz. This part of IEC 60871 also applies to capacitors intended for use in power filter circuits.

  6. Voltage-Assisted Magnetic Switching in MgO/CoFeB-Based Magnetic Tunnel Junctions by Way of Interface Reconstruction. (United States)

    Ko, Jungho; Hong, Jongill


    Engineering of interfacial structures has become important more than ever before to find new scientific observations and to create novel applications. Here, we show that the interface reconstructed by atomic layer-thick Mg insertion substantially improved the magneto-electrical properties of perpendicular magnetic tunnel junctions essential for modern spintronic applications. The 0.2-0.4 nm-thick Mg inserted between the MgO tunnel barrier and CoFeB ferromagnet restructured the interface in such ways as to protect the CoFeB from overoxidation, to strengthen the texture, to make the interfacial roughness smooth, and to relax the mechanical stress. Observed were great increases in the perpendicular magnetic moment and perpendicular magnetic anisotropy of the CoFeB by 2.1 and 1.8 times, respectively, which can be ascribed to the optimum interfacial condition because of the least possible chemical damage. The strong enhancement of (010) in-plane and (001) out-of-plane texture and of interfacial roughness led to a significant increase in the tunnel magnetoresistance by 4.4 times from 13.2 to 57.6% by the insertion. Most importantly, such optimum chemical and physical structures at the interface could modulate the perpendicular magnetic properties by an electric field. The electric field-controlled magnetic anisotropy coefficients became symmetrically bipolar to the electric field and were increased over 100 fJ/V·m, which is 6 times larger than one found before the Mg insertion. As a result, we could successfully demonstrate the voltage-induced magnetization switching of the perpendicular magnetic tunnel junctions with the help of an external magnetic field. Our findings will ignite further study on the new way of electrical control over magnetic switching and provide an essential ingredient to realize electric field-driven energy-effective magneto-electronic devices.

  7. A comprehensive design approach for a three-phase high-frequency single-switch discontinuous-mode boost power factor corrector based on analytically derived normalized converter component ratings

    Energy Technology Data Exchange (ETDEWEB)

    Kolar, J.W.; Ertl, H.; Zach, F.C. [Technical Univ. Vienna (Austria). Power Electronics Section


    In this paper the peak, mean, and rms values of the component currents of a three-phase single-switch discontinuous inductor current mode boost rectifier are calculated analytically. The values are given in rated form in dependency on the output power and on the ratio of output voltage to the amplitude of the mains voltage. Furthermore, the influence of the voltage transfer ratio on the shape of the mains currents and on the power factor of the system is analyzed. The theoretical analysis is verified by digital simulation and a good consistency is achieved. Finally, the approach of the converter dimensioning based on the graphical representation of the calculation results is described and illustrated using a specific example. The correctness of the dimensioning is verified by measurements on a laboratory model.

  8. Dual-Responsive Molecular Switches Based on Dithienylethene-Ru(II) Organometallics in Self-Assembled Monolayers Operating at Low Voltage. (United States)

    Mulas, Andrea; He, Xiaoyan; Hervault, Yves-Marie; Norel, Lucie; Rigaut, Stéphane; Lagrost, Corinne


    Two carbon-rich ruthenium complexes bearing a dithienylethene (DTE) unit and a hexylthiol spacer were designed to be attached on gold surfaces. Both compounds display photochemically driven switching properties, allowing reversible conversion from open to closed forms of the DTE units upon irradiation in solution. In contrast, only the bimetallic complex undergoes an efficient electrochemical ring closure at low potential, (0.5 V vs. SCE), whereas the monometallic complex shows a simple one-electron reversible redox event. These appealing switching properties could be successfully transferred within diluted self-assembled monolayers (SAMs). Furthermore, the two immobilized organometallics exhibit fast electron-transfer kinetics. Therefore, this organometallic strategy allows us to obtain multifunctional surfaces with the possibility of combining switching events triggered by an electrochemical oxidation at low potential and by light at distinct wavelengths for a write-and-erase function, along with an access to different oxidation states. Importantly, a non-destructive electrochemical read-out is achieved at a sufficiently high scan rate that prevents any electrochemical closing. On the whole, the two surface-confined organometallic compounds exhibit appealing properties for application in molecular electronics. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. High-voltage switchgear and controlgear part 200 : AC metal-enclosed switchgear and controlgear for rated voltages above 1 kV and up to and including 52 kV

    CERN Document Server

    International Electrotechnical Commission. Geneva


    Specifies requirements for factory-assembled metal-enclosed switchgear and controlgear for alternating current of rated voltages above 1 kV and up to and including 52 kV for indoor and outdoor installation, and for service frequencies up to and including 60 Hz. Enclosures may include fixed and removable components and may be filled with fluid (liquid or gas) to provide insulation. This standard defines several types of metal enclosed switchgear and controlgear which differ due to - the consequences on network service continuity in case of maintenance on the switchgear and controlgear; - the need and convenience of maintenance of the equipment. For metal-enclosed switchgear and controlgear containing gas-filled compartments, the design pressure is limited to a maximum of 300 kPa (relative pressure). Metal-enclosed switchgear and controlgear for special use, for example, in flammable atmospheres, in mines or on board ships, may be subject to additional requirements. Components contained in metal-enclosed switch...

  10. High-voltage switchgear and controlgear part 200 : AC metal-enclosed switchgear and controlgear for rated voltages above 1 kV and up to and including 52 kV

    CERN Document Server

    International Electrotechnical Commission. Geneva


    Specifies requirements for factory-assembled metal-enclosed switchgear and controlgear for alternating current of rated voltages above 1 kV and up to and including 52 kV for indoor and outdoor installation, and for service frequencies up to and including 60 Hz. Enclosures may include fixed and removable components and may be filled with fluid (liquid or gas) to provide insulation. This standard defines several types of metal enclosed switchgear and controlgear which differ due to - the consequences on network service continuity in case of maintenance on the switchgear and controlgear; - the need and convenience of maintenance of the equipment. For metal-enclosed switchgear and controlgear containing gas-filled compartments, the design pressure is limited to a maximum of 300 kPa (relative pressure). Metal-enclosed switchgear and controlgear for special use, for example, in flammable atmospheres, in mines or on board ships, may be subject to additional requirements. Components contained in metal-enclosed switch...

  11. Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films

    Directory of Open Access Journals (Sweden)

    Jian-Yang Lin


    Full Text Available SiO2 or Cu-doped SiO2 (Cu:SiO2 insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM cells. The CB-RAMs were then subjected to a constant-voltage stressing (CVS at room temperature. The experimental results show that the room-temperature CVS treatment can effectively affect the current conduction behavior and stabilize the resistive switching of the memory cells. After the CVS, the current conduction mechanisms in the high resistance state during the set process of the Cu/Cu:SiO2/W cell can be changed from Ohm’s law and the space charge limited conduction to Ohm’s law, the Schottky emission, and the space charge limited conduction. Presumably, it is due to the breakage of the conduction filaments during the CVS treatment that the conduction electrons cannot go back to the back electrode smoothly.

  12. Fundamental studies on the switching in liquid nitrogen environment using vacuum switches for application in future high-temperature superconducting medium-voltage power grids; Grundsatzuntersuchungen zum Schalten in Fluessigstickstoff-Umgebung mit Vakuumschaltern zur Anwendung in zukuenftigen Hochtemperatur-Supraleitungs-Mittelspannungsnetzen

    Energy Technology Data Exchange (ETDEWEB)

    Golde, Karsten


    By means of superconducting equipment it is possible to reduce the transmission losses in distribution networks while increasing the transmission capacity. As a result even saving a superimposed voltage level would be possible, which can put higher investment costs compared to conventional equipment into perspective. For operation of superconducting systems it is necessary to integrate all equipment in the cooling circuit. This also includes switchgears. Due to cooling with liquid nitrogen, however, only vacuum switching technology comes into question. Thus, the suitability of vacuum switches is investigated in this work. For this purpose the mechanics of the interrupters is considered first. Material investigations and switching experiments at ambient temperature and in liquid nitrogen supply information on potential issues. For this purpose, a special pneumatic construction is designed, which allows tens of thousands of switching cycles. Furthermore, the electrical resistance of the interrupters is considered. Since the contact system consists almost exclusively of copper, a remaining residual resistance and appropriate thermal losses must be considered. Since they have to be cooled back, an appropriate evaluation is given taking environmental parameters into account. The dielectric strength of vacuum interrupters is considered both at ambient temperature as well as directly in liquid nitrogen. For this purpose different contact distances are set at different interrupter types. A distinction is made between internal and external dielectric strength. Conditioning and deconditioning effects are minimized by an appropriate choice of the test circuit. The current chopping and resulting overvoltages are considered to be one of the few drawbacks of vacuum switching technology. Using a practical test circuit the height of chopping current is determined and compared for different temperatures. Due to strong scattering the evaluation is done using statistical methods. At

  13. Demand Response of a TCL population using Switching-Rate Actuation

    DEFF Research Database (Denmark)

    Totu, Luminita Cristiana; Wisniewski, Rafal; Leth, John-Josef


    the distribution of the TCLs individual states across the population. The distribution approach has two main advantages. It scales excellently since the computational requirements do not increase with the number of units, and it allows data from individual units to be used anonymously, which solves privacy......This work considers the problem of actively managing the power consumption of a large number of thermostically controlled loads (TCLs), namely a TCL population, and a case-study of household refrigerators. Control is performed using a new randomized actuation that consists of switching units...... on and off at given rates, while at the same time respecting the nominal constraints on each individual unit. Both the free and the controlled behavior of individual TCLs can be aggregated, making it possible to handle a TCL population as if it were a single system. The aggregation method uses...

  14. Device for monitoring cell voltage (United States)

    Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE


    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  15. Personality Measures Link Slower Binocular Rivalry Switch Rates to Higher Levels of Self-Discipline. (United States)

    Antinori, Anna; Smillie, Luke D; Carter, Olivia L


    In this paper we investigated the relation between personality and the rate of perceptual alternations during binocular rivalry. Studies have demonstrated that slower rivalry alternations are associated with a range of clinical conditions. It is less clear whether rivalry dynamics similarly co-vary with individual differences in psychological traits seen across non-clinical population. We assessed rivalry rates in a non-clinical population (n = 149) and found slower rivalry alternations were positively related r(149) = 0.20, p = 0.01 to industriousness, a trait characterized by a high level of self-discipline using the Big Five Aspect Scales (BFAS). Switch rates were also negatively related r(149) = -0.20, p = 0.01 to cognitive disorganization, a schizotypy trait capturing schizophrenia-like symptoms of disorganization using the Oxford-Liverpool Inventory of feelings and Experiences (O-LIFE). Furthermore, we showed that that these relations with personality were unaffected by the inclusion or exclusion of mixed percept in the response analysis. Together these results are relevant to theoretical models of rivalry investigating individual differences in rivalry temporal dynamics and they may reduce concerns about the impact of task compliance in clinical research using rivalry as a potential diagnostic tool.

  16. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.


    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  17. A solid-state dielectric elastomer switch for soft logic

    Energy Technology Data Exchange (ETDEWEB)

    Chau, Nixon [Biomimetics Laboratory, Auckland Bioengineering Institute, The University of Auckland, Level 6, 70 Symonds Street, Auckland 1010 (New Zealand); Slipher, Geoffrey A., E-mail:; Mrozek, Randy A. [U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States); O' Brien, Benjamin M. [StretchSense, Ltd., 27 Walls Rd., Penrose, Auckland 1061 (New Zealand); Anderson, Iain A. [Biomimetics Laboratory, Auckland Bioengineering Institute, The University of Auckland, Level 6, 70 Symonds Street, Auckland 1010 (New Zealand); StretchSense, Ltd., 27 Walls Rd., Penrose, Auckland 1061 (New Zealand); Department of Engineering Science, School of Engineering, The University of Auckland, Level 3, 70 Symonds Street, Auckland 1010 (New Zealand)


    In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease of manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.

  18. Electro-optic control of a PPLN-unpoled LiNbO3 boundary for low-voltage Q switching of an intracavity frequency-doubled Nd3+:YVO4 laser. (United States)

    Torregrosa, A J; Maestre, H; Fernández-Pousa, C R; Pereda, J A; Capmany, J


    We present a simple technique to integrate an electro-optic Q switch in a periodically poled bulk lithium niobate crystal bounded by two unpoled (monodomain) regions. The technique exploits the high sensitivity to low applied electric fields of the total internal reflection condition in the periodic poled-unpoled boundary for the small grazing incidence angles associated with the diffraction of a focused Gaussian beam that propagates in the periodically poled region with its axis parallel to the boundary. When the arrangement is placed intracavity to a 1064 nm diode-pumped Nd(3+):YVO(4) laser, it performs simultaneously as a Q switch and as a second-harmonic generator, with Q switching starting at applied voltages as low as 1 V over a 500 microm thickness and with no additional optical elements.

  19. Impulse voltage control of continuously tunable bipolar resistive switching in Pt/Bi0.9Eu0.1FeO3/Nb-doped SrTiO3 heterostructures (United States)

    Wei, Maocai; Liu, Meifeng; Wang, Xiuzhang; Li, Meiya; Zhu, Yongdan; Zhao, Meng; Zhang, Feng; Xie, Shuai; Hu, Zhongqiang; Liu, Jun-Ming


    Epitaxial Bi0.9Eu0.1FeO3 (BEFO) thin films are deposited on Nb-doped SrTiO3 (NSTO) substrates by pulsed laser deposition to fabricate the Pt/BEFO/NSTO (001) heterostructures. These heterostructures possess bipolar resistive switching, where the resistances versus writing voltage exhibits a distinct hysteresis loop and a memristive behavior with good retention and anti-fatigue characteristics. The local resistive switching is confirmed by the conductive atomic force microscopy (C-AFM), suggesting the possibility to scale down the memory cell size. The observed memristive behavior could be attributed to the ferroelectric polarization effect, which modulates the height of potential barrier and width of depletion region at the BEFO/NSTO interface. The continuously tunable resistive switching behavior could be useful to achieve non-volatile, high-density, multilevel random access memory with low energy consumption.

  20. Impulse voltage control of continuously tunable bipolar resistive switching in Pt/Bi{sub 0.9}Eu{sub 0.1}FeO{sub 3}/Nb-doped SrTiO{sub 3} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Maocai; Liu, Meifeng; Wang, Xiuzhang [Hubei Normal University, Institute for Advanced Materials, and School of Physics and Electronic Science, Huangshi (China); Li, Meiya; Zhu, Yongdan; Zhao, Meng; Zhang, Feng; Xie, Shuai [Wuhan University, School of Physics and Technology, and Key Laboratory of Artificial Micro/Nano Structures of the Ministry of Education, Wuhan (China); Hu, Zhongqiang [Northeastern University, Department of Electrical and Computer Engineering, Boston, MA (United States); Liu, Jun-Ming [Nanjing University, Laboratory of Solid State Microstructures, Nanjing (China)


    Epitaxial Bi{sub 0.9}Eu{sub 0.1}FeO{sub 3} (BEFO) thin films are deposited on Nb-doped SrTiO{sub 3} (NSTO) substrates by pulsed laser deposition to fabricate the Pt/BEFO/NSTO (001) heterostructures. These heterostructures possess bipolar resistive switching, where the resistances versus writing voltage exhibits a distinct hysteresis loop and a memristive behavior with good retention and anti-fatigue characteristics. The local resistive switching is confirmed by the conductive atomic force microscopy (C-AFM), suggesting the possibility to scale down the memory cell size. The observed memristive behavior could be attributed to the ferroelectric polarization effect, which modulates the height of potential barrier and width of depletion region at the BEFO/NSTO interface. The continuously tunable resistive switching behavior could be useful to achieve non-volatile, high-density, multilevel random access memory with low energy consumption. (orig.)

  1. High repetition rate Q-switched Er3+-doped fiber ring laser

    DEFF Research Database (Denmark)

    Sejka, Milan; Poulsen, Christian; Shi, Yuan


    In this paper we present for the first time Q switched Er-doped fibre laser utilising a ring Fabry-Perot cavity......In this paper we present for the first time Q switched Er-doped fibre laser utilising a ring Fabry-Perot cavity...

  2. Comparison of soft and hard-switching effiency in a three-level single phase 60kW dc-ac converter

    DEFF Research Database (Denmark)

    Munk-Nielsen, Stig; Teodorescu, Remus; Bech, Michael Møller


    Efficiency measurements on a three-level single-phase soft-switched converter are presented and show a slightly improved efficiency compared with the hard-switched converter for output powers higher than 25 % of rated power. The resonant converter switches are Zero Voltage Switched (ZVS......) and a simple resonant circuit is used. Increased resonant converter efficiency enables a reduction in the semiconductor size pr. watt output power or an increase the switching frequency....

  3. Lower switch rate in depressed patients with bipolar II than bipolar I disorder treated adjunctively with second-generation antidepressants

    NARCIS (Netherlands)

    Altshuler, LL; Suppes, T; Nolen, WA; Leverich, G; Keck, PE; Frye, MA; Kupka, R; McElroy, SL; Grunze, H; Kitchen, CMR; Post, R; Black, D.O.

    Objectives: The authors compared the switch rate into hypomania/mania in depressed patients treated with second-generation antidepressants who had either bipolar I or bipolar II disorder. Method: In a 10-week trial, 184 outpatients with bipolar depression (134 with bipolar I disorder, 48 with

  4. Human-rated Safety Certification of a High Voltage Robonaut Lithium-ion Battery (United States)

    Jeevarajan, Judith; Yayathi, S.; Johnson, M.; Waligora, T.; Verdeyen, W.


    NASA's rigorous certification process is being followed for the R2 high voltage battery program for use of R2 on International Space Station (ISS). Rigorous development testing at appropriate levels to credible off-nominal conditions and review of test data led to design improvements for safety at the virtual cell, cartridge and battery levels. Tests were carried out at all levels to confirm that both hardware and software controls work. Stringent flight acceptance testing of the flight battery will be completed before launch for mission use on ISS.

  5. Line-to-line voltage based modulation scheme for single-phase reduced switch ac-dc-ac converters to achieve improved performance

    DEFF Research Database (Denmark)

    Qin, Zian; Loh, Poh Chiang; Blaabjerg, Frede


    . With the SVPWM or DPWM proposed in literatures, the generation of the references is phase voltage based. But the phase voltages actually cannot be controlled directly by the PWM converter, since they can be influenced by both of terminal voltages and the load network while the PWM converter can only control...... the former. It thus introduces complexity to the generation of the references, especially in unbalanced source or load condition. In this paper, a line-to-line voltage based PWM reference generation method is proposed. The proposed method is easy to be implemented to maximize the DC link voltage utilization...

  6. Remote switch actuator (United States)

    Haas, Edwin Gerard; Beauman, Ronald; Palo, Jr., Stefan


    The invention provides a device and method for actuating electrical switches remotely. The device is removably attached to the switch and is actuated through the transfer of a user's force. The user is able to remain physically removed from the switch site obviating need for protective equipment. The device and method allow rapid, safe actuation of high-voltage or high-current carrying electrical switches or circuit breakers.

  7. Relapse rates in patients with multiple sclerosis switching from interferon to fingolimod or glatiramer acetate: a US claims database study.

    Directory of Open Access Journals (Sweden)

    Niklas Bergvall

    Full Text Available BACKGROUND: Approximately one-third of patients with multiple sclerosis (MS are unresponsive to, or intolerant of, interferon (IFN therapy, prompting a switch to other disease-modifying therapies. Clinical outcomes of switching therapy are unknown. This retrospective study assessed differences in relapse rates among patients with MS switching from IFN to fingolimod or glatiramer acetate (GA in a real-world setting. METHODS: US administrative claims data from the PharMetrics Plus™ database were used to identify patients with MS who switched from IFN to fingolimod or GA between October 1, 2010 and March 31, 2012. Patients were matched 1∶1 using propensity scores within strata (number of pre-index relapses on demographic (e.g. age and gender and disease (e.g. timing of pre-index relapse, comorbidities and symptoms characteristics. A claims-based algorithm was used to identify relapses while patients were persistent with therapy over 360 days post-switch. Differences in both the probability of experiencing a relapse and the annualized relapse rate (ARR while persistent with therapy were assessed. RESULTS: The matched sample population contained 264 patients (n = 132 in each cohort. Before switching, 33.3% of patients in both cohorts had experienced at least one relapse. During the post-index persistence period, the proportion of patients with at least one relapse was lower in the fingolimod cohort (12.9% than in the GA cohort (25.0%, and ARRs were lower with fingolimod (0.19 than with GA (0.51. Patients treated with fingolimod had a 59% lower probability of relapse (odds ratio, 0.41; 95% confidence interval [CI], 0.21-0.80; p = 0.0091 and 62% fewer relapses per year (rate ratio, 0.38; 95% CI, 0.21-0.68; p = 0.0013 compared with those treated with GA. CONCLUSIONS: In a real-world setting, patients with MS who switched from IFNs to fingolimod were significantly less likely to experience relapses than those who switched to GA.

  8. Switch Rates During Acute Treatment for Bipolar II Depression With Lithium, Sertraline, or the Two Combined: A Randomized Double-Blind Comparison. (United States)

    Altshuler, Lori L; Sugar, Catherine A; McElroy, Susan L; Calimlim, Brian; Gitlin, Michael; Keck, Paul E; Aquino-Elias, Ana; Martens, Brian E; Fischer, E Grace; English, Teri L; Roach, Janine; Suppes, Trisha


    The authors compared medication-induced mood switch risk (primary outcome), as well as treatment response and side effects (secondary outcomes) with three acute-phase treatments for bipolar II depression. In a 16-week, double-blind, multisite comparison study, 142 participants with bipolar II depression were randomly assigned to receive lithium monotherapy (N=49), sertraline monotherapy (N=45), or combination treatment with lithium and sertraline (N=48). At each visit, mood was assessed using standardized rating scales. Rates of switch were compared, as were rates of treatment response and the presence and severity of treatment-emergent side effects. Twenty participants (14%) experienced a switch during the study period (hypomania, N=17; severe hypomania, N=3). Switch rates did not differ among the three treatment groups, even after accounting for dropout. No patient had a manic switch or was hospitalized for a switch. Most switches occurred within the first 5 weeks of treatment. The treatment response rate for the overall sample was 62.7% (N=89), without significant differences between groups after accounting for dropout. The lithium/sertraline combination group had a significantly higher overall dropout rate than the monotherapy groups but did not have an accelerated time to response. Lithium monotherapy, sertraline monotherapy, and lithium/sertraline combination therapy were associated with similar switch and treatment response rates in participants with bipolar II depression. The dropout rate was higher in the lithium/sertraline combination treatment group, without any treatment acceleration advantage.

  9. Energy reversible switching from amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.


    We report observation of energy reversible switching from amorphous metal based nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM switches can be used as a complementary switching element in many nanoelectronic system applications. Its inherent zero power consumption because of mechanical detachment is an attractive feature. However, its operating voltage needs to be in the realm of 1 volt or lower. Appropriate design and lower Young\\'s modulus can contribute achieving lower operating voltage. Therefore, we have developed amorphous metal with low Young\\'s modulus and in this paper reporting the energy reversible switching from a laterally actuated double electrode NEM switch. © 2013 IEEE.

  10. Superior bit error rate and jitter due to improved switching field distribution in exchange spring magnetic recording media (United States)

    Suess, D.; Fuger, M.; Abert, C.; Bruckner, F.; Vogler, C.


    We report two effects that lead to a significant reduction of the switching field distribution in exchange spring media. The first effect relies on a subtle mechanism of the interplay between exchange coupling between soft and hard layers and anisotropy that allows significant reduction of the switching field distribution in exchange spring media. This effect reduces the switching field distribution by about 30% compared to single-phase media. A second effect is that due to the improved thermal stability of exchange spring media over single-phase media, the jitter due to thermal fluctuation is significantly smaller for exchange spring media than for single-phase media. The influence of this overall improved switching field distribution on the transition jitter in granular recording and the bit error rate in bit-patterned magnetic recording is discussed. The transition jitter in granular recording for a distribution of Khard values of 3% in the hard layer, taking into account thermal fluctuations during recording, is estimated to be a = 0.78 nm, which is similar to the best reported calculated jitter in optimized heat-assisted recording media. PMID:27245287

  11. A 400-mV 2.4-GHz frequency-shift keying transmitter using a capacitor switch across a transformer for a wide tuning range voltage-controlled oscillator (United States)

    Miyahara, Yasunori; Ishikawa, Keisuke; Kuroda, Tadahiro


    We use a simple directly modulated closed loop to develop a 2.1-mW, 2.4-GHz frequency-shift keying (FSK) transmitter that operates on 400-mV DC supply. Connecting a capacitor bank switch via a transformer in the voltage control oscillator (VCO) to the frequency-divider circuit expands the frequency tuning range without reducing VCO performance. A prototype was fabricated using the 65-nm standard CMOS process with a chip size of 1.65 × 1.85 mm2. A modulation output signal spectrum of -42 dBc at 1.5 MHz with -6 dBm at the PA buffer output terminal; moreover, a VCO phase noise of -101 dBc/Hz at 1 MHz is achieved. The FSK transmitter can readily use voltages supplied by harvested energy because of the low power consumption of the sensor network.

  12. Low power, scalable multichannel high voltage controller (United States)

    Stamps, James Frederick [Livermore, CA; Crocker, Robert Ward [Fremont, CA; Yee, Daniel Dadwa [Dublin, CA; Dils, David Wright [Fort Worth, TX


    A low voltage control circuit is provided for individually controlling high voltage power provided over bus lines to a multitude of interconnected loads. An example of a load is a drive for capillary channels in a microfluidic system. Control is distributed from a central high voltage circuit, rather than using a number of large expensive central high voltage circuits to enable reducing circuit size and cost. Voltage is distributed to each individual load and controlled using a number of high voltage controller channel switches connected to high voltage bus lines. The channel switches each include complementary pull up and pull down photo isolator relays with photo isolator switching controlled from the central high voltage circuit to provide a desired bus line voltage. Switching of the photo isolator relays is further controlled in each channel switch using feedback from a resistor divider circuit to maintain the bus voltage swing within desired limits. Current sensing is provided using a switched resistive load in each channel switch, with switching of the resistive loads controlled from the central high voltage circuit.

  13. Active-Snubbing Or Passive-Snubbing for Fast Switches?


    Robinson, Francis; Williams, Barry


    As power-switches improve, the primary function of switching-aid circuits changes from modifying the shape or rate-of-traverse of V-I loci within devicesafe-operating-areas (SOA's), to clamping transient current and voltage, at turn-on and turn-off, below peak current and voltage ratings. Also, as deviceruggedness and device parameters are improved, or made less variable between devices and with operating conditions, active-snubbing or active-clamping becomes feasible, whereby the magnitude o...

  14. Assessment of surge arrester failure rate and application studies in Hellenic high voltage transmission lines

    Energy Technology Data Exchange (ETDEWEB)

    Christodoulou, C.A.; Fotis, G.P.; Gonos, I.F.; Stathopulos, I.A. [National Technical University of Athens, School of Electrical and Computer Engineering, High Voltage Laboratory, 9 Iroon Politechniou St., Zografou Campus, 157 80 Athens (Greece); Ekonomou, L. [A.S.PE.T.E. - School of Pedagogical and Technological Education, Department of Electrical Engineering Educators, N. Heraklion, 141 21 Athens (Greece)


    The use of transmission line surge arresters to improve the lightning performance of transmission lines is becoming more common. Especially in areas with high soil resistivity and ground flash density, surge arresters constitute the most effective protection mean. In this paper a methodology for assessing the surge arrester failure rate based on the electrogeometrical model is presented. Critical currents that exceed arresters rated energy stress were estimated by the use of a simulation tool. The methodology is applied on operating Hellenic transmission lines of 150 kV. Several case studies are analyzed by installing surge arresters on different intervals, in relation to the region's tower footing resistance and the ground flash density. The obtained results are compared with real records of outage rate showing the effectiveness of the surge arresters in the reduction of the recorded failure rate. The presented methodology can be proved valuable to the studies of electric power systems designers intending in a more effective lightning protection, reducing the operational costs and providing continuity of service. (author)

  15. Deterministic Switching of Perpendicular Magnetic Anisotropy by Voltage Control of Spin Reorientation Transition in (Co/Pt)3/Pb(Mg1/3Nb2/3)O3-PbTiO3Multiferroic Heterostructures. (United States)

    Peng, Bin; Zhou, Ziyao; Nan, Tianxiang; Dong, Guohua; Feng, Mengmeng; Yang, Qu; Wang, Xinjun; Zhao, Shishun; Xian, Dan; Jiang, Zhuang-De; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X; Liu, Ming


    One of the central challenges in realizing multiferroics-based magnetoelectric memories is to switch perpendicular magnetic anisotropy (PMA) with a control voltage. In this study, we demonstrate electrical flipping of magnetization between the out-of-plane and the in-plane directions in (Co/Pt) 3 /(011) Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 multiferroic heterostructures through a voltage-controllable spin reorientation transition (SRT). The SRT onset temperature can be dramatically suppressed at least 200 K by applying an electric field, accompanied by a giant electric-field-induced effective magnetic anisotropy field (ΔH eff ) up to 1100 Oe at 100 K. In comparison with conventional strain-mediated magnetoelastic coupling that provides a ΔH eff of only 110 Oe, that enormous effective field is mainly related to the interface effect of electric field modification of spin-orbit coupling from Co/Pt interfacial hybridization via strain. Moreover, electric field control of SRT is also achieved at room temperature, resulting in a ΔH eff of nearly 550 Oe. In addition, ferroelastically nonvolatile switching of PMA has been demonstrated in this system. E-field control of PMA and SRT in multiferroic heterostructures not only provides a platform to study strain effect and interfacial effect on magnetic anisotropy of the ultrathin ferromagnetic films but also enables the realization of power efficient PMA magnetoelectric and spintronic devices.

  16. Higher success rate with transcranial electrical stimulation of motor-evoked potentials using constant-voltage stimulation compared with constant-current stimulation in patients undergoing spinal surgery. (United States)

    Shigematsu, Hideki; Kawaguchi, Masahiko; Hayashi, Hironobu; Takatani, Tsunenori; Iwata, Eiichiro; Tanaka, Masato; Okuda, Akinori; Morimoto, Yasuhiko; Masuda, Keisuke; Tanaka, Yuu; Tanaka, Yasuhito


    During spine surgery, the spinal cord is electrophysiologically monitored via transcranial electrical stimulation of motor-evoked potentials (TES-MEPs) to prevent injury. Transcranial electrical stimulation of motor-evoked potential involves the use of either constant-current or constant-voltage stimulation; however, there are few comparative data available regarding their ability to adequately elicit compound motor action potentials. We hypothesized that the success rates of TES-MEP recordings would be similar between constant-current and constant-voltage stimulations in patients undergoing spine surgery. The objective of this study was to compare the success rates of TES-MEP recordings between constant-current and constant-voltage stimulation. This is a prospective, within-subject study. Data from 100 patients undergoing spinal surgery at the cervical, thoracic, or lumbar level were analyzed. The success rates of the TES-MEP recordings from each muscle were examined. Transcranial electrical stimulation with constant-current and constant-voltage stimulations at the C3 and C4 electrode positions (international "10-20" system) was applied to each patient. Compound muscle action potentials were bilaterally recorded from the abductor pollicis brevis (APB), deltoid (Del), abductor hallucis (AH), tibialis anterior (TA), gastrocnemius (GC), and quadriceps (Quad) muscles. The success rates of the TES-MEP recordings from the right Del, right APB, bilateral Quad, right TA, right GC, and bilateral AH muscles were significantly higher using constant-voltage stimulation than those using constant-current stimulation. The overall success rates with constant-voltage and constant-current stimulations were 86.3% and 68.8%, respectively (risk ratio 1.25 [95% confidence interval: 1.20-1.31]). The success rates of TES-MEP recordings were higher using constant-voltage stimulation compared with constant-current stimulation in patients undergoing spinal surgery. Copyright © 2017

  17. Thin film organic photodetectors for indirect X-ray detection demonstrating low dose rate sensitivity at low voltage operation

    Energy Technology Data Exchange (ETDEWEB)

    Starkenburg, Daken J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA; Johns, Paul M. [Nuclear Engineering Program, University of Florida, Gainesville, Florida 32611, USA; Detection Systems Group, Pacific Northwest National Laboratory, Richland, Washington 99354, USA; Baciak, James E. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA; Nuclear Engineering Program, University of Florida, Gainesville, Florida 32611, USA; Nino, Juan C. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA; Xue, Jiangeng [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA


    Developments in the field of organic semiconductors have generated organic photodetectors with high quantum efficiency, wide spectral sensitivity, low power consumption, and unique form factors that are flexible and conformable to their substrate shape. In this work, organic photodetectors coupled with inorganic CsI(Tl) scintillators are used to showcase the low dose rate sensitivity that is enabled when high performance organic photodetectors and scintillator crystals are integrated. The detection capability of these organic-inorganic coupled systems to high energy radiation highlights their potential as an alternative to traditional photomultiplier tubes for nuclear spectroscopy applications. When exposed to Bremsstrahlung radiation produced from an X-ray generator, SubPc:C60, AlPcCl:C70, and P3HT:PC61BM thin film photodetectors with active layer thicknesses less than 100 nm show detection of incident radiation at low and no applied bias. Remarkably low dose rates, down to at least 0.28 µGy/s, were detectable with a characteristic linear relationship between exposure rate and photodetector current output. These devices also demonstrate sensitivities as high as 5.37 mC Gy-1 cm-2 when coupled to CsI(Tl). Additionally, as the tube voltage across the X-ray generator was varied, these organic-inorganic systems showed their ability to detect a range of continuous radiation spectra spanning several hundred keV.

  18. Thin film organic photodetectors for indirect X-ray detection demonstrating low dose rate sensitivity at low voltage operation (United States)

    Starkenburg, Daken J.; Johns, Paul M.; Baciak, James E.; Nino, Juan C.; Xue, Jiangeng


    Developments in the field of organic semiconductors have generated organic photodetectors with high quantum efficiency, wide spectral sensitivity, low power consumption, and unique form factors that are flexible and conformable to their substrate shape. In this work, organic photodetectors coupled with inorganic CsI(Tl) scintillators are used to showcase the low dose rate sensitivity that is enabled when high performance organic photodetectors and scintillator crystals are integrated. The detection capability of these organic-inorganic coupled systems to high energy radiation highlights their potential as an alternative to traditional photomultiplier tubes for nuclear spectroscopy applications. When exposed to Bremsstrahlung radiation produced from an X-ray generator, SubPc:C60, AlPcCl:C70, and P3HT:PC61BM thin film photodetectors with active layer thicknesses less than 100 nm show detection of incident radiation at low and no applied bias. Remarkably low dose rates, down to at least 0.18 μGy/s, were detectable with a characteristic linear relationship between exposure rate and photodetector current output. These devices also demonstrate sensitivities as high as 5.37 mC Gy-1 cm-2 when coupled to CsI(Tl). Additionally, as the tube voltage across the X-ray generator was varied, these organic-inorganic systems showed their ability to detect a range of continuous radiation spectra spanning several hundred keV.

  19. Persistence, switch rates, drug consumption and costs of biological treatment of rheumatoid arthritis: an observational study in Italy. (United States)

    Degli Esposti, Luca; Favalli, Ennio Giulio; Sangiorgi, Diego; Di Turi, Roberta; Farina, Giuseppina; Gambera, Marco; Ravasio, Roberto


    The aim of this analysis was to provide an estimate of drug utilization indicators (persistence, switch rate and drug consumption) on biologics and the corresponding costs (drugs, admissions and specialist care) incurred by the Italian National Health Service in the management of adult patients with rheumatoid arthritis (RA). We conducted an observational retrospective cohort analysis using the administrative databases of three local health units. We considered all patients aged ≥18 years with a diagnosis of RA and at least one biologic drug prescription between January 2010 and December 2012 (recruitment period). Persistence was defined as maintenance over the last 3 months of the follow-up period of the same biological therapy administered at the index date. A switch was defined as the presence of a biological therapy other than that administered at the index date during the last 3 months of the follow-up period. Hospital admissions (with a diagnosis of RA or other RA-related diagnoses), specialist outpatient services, instrumental diagnostics and pharmaceutical consumption were assessed. The drug utilization analysis took into account only biologics with at least 90 patients on treatment at baseline (adalimumab n=144, etanercept n=236 and infliximab n=94). In each year, etanercept showed better persistence with initial treatment than adalimumab or infliximab. Etanercept was characterized by the lowest number of patients increasing the initial drug consumption (2.6%) and by the highest number of patients reducing the initial drug consumption (10.5%). The mean cost of treatment for a patient persisting with the initial treatment was €12,388 (€14,182 for adalimumab, €12,103 for etanercept and €11,002 for infliximab). The treatment costs for patients switching from initial treatment during the first year of follow-up were higher than for patients who did not switch (€12,710 vs. €11,332). Persistence, switch rate and drug consumption seem to directly

  20. Bio-wave change photo-voltages of the solar cells at same changed rate by probability effect of spacetime structure (United States)

    Cao, Dayong

    In our experiment, when light (of ``lamp LED'' 3W, 20cm away from the solar cells) simultaneous radiated on four solar cells, they would produce their photo-voltages which are called as background photo-voltages. And then, the author used thought wave to remotely (wireless) act on the four solar cells and increase four background photo-voltages at the same rates which is about 64%. After that, Adding the other light (of ``lamp CFL'') to simultaneous radiate on the four solar cells to changed their background photo-voltages. But there are different changed rates which will appear in the general experiments because the luminous sensitivities of the solar cell are different and the photo-voltages is a nonlinear function. The probability effects of the spacetime structure (of Confined Structural non-Newtonian Fluids) of brain wave (because the wave is spacetime) to change a balance structure between Electron Clouds and electron holes of P-N Junction, and change the background photo-voltages of the solar cells. In the experiments, the consciousness effect, and the relationship between brain wave and consciousness effect will be considered. After the decade of the brain research and the ``BRAIN'' Initiative, a decade of the consciousness need be taken. AEEA.

  1. Investigation of Microelectromechanical Switches for Next Generation DC Power Distribution System (United States)

    Femi, R.; Clement, Shibu; Agrawal, Anita; Prince, A. Amalin


    This paper investigates the application of microelectromechanical system (MEMS) switches for DC power distribution system. Traditional electromechanical switches, solid state switches and solid state switch array are studied and simulated to understand their characteristics. Performance and characteristics of MEMS switches are reviewed and identified that electrostatically actuated MEMS switches are suitable for DC power applications. Scalable total cross tied (TCT) array configuration using MEMS switches has been proposed. The proposed configuration is suitable for variable voltage/current rating. Arc-less behavior of the switch configuration is analyzed using modified Paschen's curve. 400 V/6 A system is considered for the simulation and comparative study. The simulated result of the proposed MEMS switch array configuration is compared with the traditional switches. The comparative study shows that the proposed switch array configuration gives better performance in terms of voltage drop, leakage current, power loss, arc and size. This can be used in DC power system protection, circuit breaking, battery protection and smart grid load switching applications.

  2. High voltage DC switchgear development for multi-kW space power system: Aerospace technology development of three types of solid state power controllers for 200-1100VDC with current ratings of 25, 50, and 80 amperes with one type utilizing an electromechanical device (United States)

    Billings, W. W.


    Three types of solid state power controllers (SSPC's) for high voltage, high power DC system applications were developed. The first type utilizes a SCR power switch. The second type employes an electromechanical power switch element with solid state commutation. The third type utilizes a transistor power switch. Significant accomplishments include high operating efficiencies, fault clearing, high/low temperature performance and vacuum operation.

  3. Endogenous Sensory Discrimination and Selection by a Fast Brain Switch for a High Transfer Rate Brain-Computer Interface. (United States)

    Xu, Ren; Jiang, Ning; Dosen, Strahinja; Lin, Chuang; Mrachacz-Kersting, Natalie; Dremstrup, Kim; Farina, Dario


    In this study, we present a novel multi-class brain-computer interface (BCI) for communication and control. In this system, the information processing is shared by the algorithm (computer) and the user (human). Specifically, an electro-tactile cycle was presented to the user, providing the choice (class) by delivering timely sensory input. The user discriminated these choices by his/her endogenous sensory ability and selected the desired choice with an intuitive motor task. This selection was detected by a fast brain switch based on real-time detection of movement-related cortical potentials from scalp EEG. We demonstrated the feasibility of such a system with a four-class BCI, yielding a true positive rate of  ∼ 80% and  ∼ 70%, and an information transfer rate of  ∼ 7 bits/min and  ∼ 5 bits/min, for the movement and imagination selection command, respectively. Furthermore, when the system was extended to eight classes, the throughput of the system was improved, demonstrating the capability of accommodating a large number of classes. Combining the endogenous sensory discrimination with the fast brain switch, the proposed system could be an effective, multi-class, gaze-independent BCI system for communication and control applications.

  4. Microcontroller switching for transformer inrush current mitigation

    Directory of Open Access Journals (Sweden)



    Full Text Available When a transformer is connected to acsupply, it may produce high transient inrush currentsmuch higher than its rated full load current. Hugeamount of transformer inrush current at the time ofenergization can cause power quality problems andprotection relays malfunctions in the connected powersystem. Transformer inrush current control and inrushcurrent reduction have been the interest topics for theresearchers for many years. The method of point onwave switching is one of the useful methods for inrushcurrent reduction. In this research work in addition tothe point on wave switching a microcontroller is usedto control the voltage waveform angle and theswitching time periods at the time of transformerenergizations. By that, the controlled voltage angle forthe few first cycles is injected to the transformer andafter the chosen time period, the full rated supplyvoltage is connected to the transformer for its normaloperation. This is a new design for the switchingmethod by use of a microcontroller.

  5. Derivation of linearized transfer functions for switching-mode regulations. Phase A: Current step-up and voltage step-up converters (United States)

    Wong, R. C.; Owen, H. A., Jr.; Wilson, T. G.


    Small-signal models are derived for the power stage of the voltage step-up (boost) and the current step-up (buck) converters. The modeling covers operation in both the continuous-mmf mode and the discontinuous-mmf mode. The power stage in the regulated current step-up converter on board the Dynamics Explorer Satellite is used as an example to illustrate the procedures in obtaining the small-signal functions characterizing a regulated converter.

  6. Design and Analysis of a High Force, Low Voltage and High Flow Rate Electro-Thermal Micropump

    Directory of Open Access Journals (Sweden)

    Ghader Yosefi


    Full Text Available This paper presents the design and simulation of an improved electro-thermal micromachined pump for drug delivery applications. Thermal actuators, which are a type of Micro Electro Mechanical system (MEMS device, are highly useful because of their ability to deliver with great force and displacement. Thus, our structure is based on a thermal actuator that exploits the Joule heating effect and has been improved using the springy length properties of MEMS chevron beams. The Joule heating effect results in a difference in temperature and therefore displacement in the beams (actuators. Simulation results show that a maximum force of 4.4 mN and a maximum flow rate of 16 μL/min can be obtained by applying an AC voltage as low as 8 V at different frequencies ranging from 1 to 32 Hz. The maximum temperature was a problem at the chevron beams and the center shaft. Thus, to locally increase the temperature of the chevron beams alone and not that of the pumping diaphragm: (1 The air gaps 2 μm underneath and above the device layer were optimized for heat transfer. (2 Release holes and providing fins were created at the center shaft and actuator, respectively, to decrease the temperature by approximately 10 °C. (3 We inserted and used a polymer tube to serve as an insulator and eliminate leakage problems in the fluidic channel.

  7. Frequency-dependent reduction of voltage-gated sodium current modulates retinal ganglion cell response rate to electrical stimulation (United States)

    Tsai, David; Morley, John W.; Suaning, Gregg J.; Lovell, Nigel H.


    The ability to elicit visual percepts through electrical stimulation of the retina has prompted numerous investigations examining the feasibility of restoring sight to the blind with retinal implants. The therapeutic efficacy of these devices will be strongly influenced by their ability to elicit neural responses that approximate those of normal vision. Retinal ganglion cells (RGCs) can fire spikes at frequencies greater than 200 Hz when driven by light. However, several studies using isolated retinas have found a decline in RGC spiking response rate when these cells were stimulated at greater than 50 Hz. It is possible that the mechanism responsible for this decline also contributes to the frequency-dependent 'fading' of electrically evoked percepts recently reported in human patients. Using whole-cell patch clamp recordings of rabbit RGCs, we investigated the causes for the spiking response depression during direct subretinal stimulation of these cells at 50-200 Hz. The response depression was not caused by inhibition arising from the retinal network but, instead, by a stimulus-frequency-dependent decline of RGC voltage-gated sodium current. Under identical experimental conditions, however, RGCs were able to spike at high frequency when driven by light stimuli and intracellular depolarization. Based on these observations, we demonstrated a technique to prevent the spiking response depression.

  8. Dissociation of carbon dioxide using a microhollow cathode discharge plasma reactor: effects of applied voltage, flow rate and concentration (United States)

    Taylan, O.; Berberoglu, H.


    This paper reports an experimental study on dissociating carbon dioxide (CO2) using a microhollow cathode discharge (MHCD) plasma reactor operated at 1 atm. The MHCD plasma reactors can be a promising technology for dissociating gases, including CO2, as they do not require catalysts, they operate at around room temperature, and can be inexpensively built and operated. In this study, CO2 balanced with the carrier gas argon (Ar) was fed through the MHCD reactor, and parametric experiments were conducted to investigate the effects of applied voltage, flow rate, and CO2 mole fraction in the influent on the composition of the products, energy conversion efficiency, and yield. Within the investigated parameter ranges, the maximum energy conversion efficiency of 14% was achieved when the specific energy input was 1.1 eV mol-1, whereas the maximum CO yield of 10.5% was achieved when the specific energy input was 4 eV mol-1. The results also showed that diluting CO2 with Ar increased the yield at an expense of a decrease in energy conversion efficiency. The results of this study provide insights for operating MHCD reactors for efficient gas dissociation at atmospheric pressure.

  9. Modified Embedded Switched Inductor Z Source Inverter


    V. Saravanan; R. Ramanujam; M. Arumugam


    A novel modified embedded switched inductor Z-source inverter is proposed by inserting the photovoltaic panels at various locations to improve the output voltage boosting performance. The proposed inverter have the concepts of embedded and switched inductor Z source network to have better features in terms of increased voltage boost inversion ability, continuous input current, reduced voltage stress on the switches/capacitors. Simulations are carried out by employing (120°) pulse width modula...

  10. The super junction bipolar transistor: a new silicon power device concept for ultra low loss switching applications at medium to high voltages (United States)

    Bauer, Friedhelm D.


    A new silicon power device concept based on the super junction (SJ) principle for power electronics in a broad spectrum of consumer, industrial and other energy conversion applications is presented in this paper. This new concept can help to sustain the trend towards ultra low loss switching--the past, present and future dominant driving force in the development of silicon high power switches. The super junction bipolar transistor (SJBT) shares many similarities with the super junction MOSFET. It has a similar MOS control structure integrated on the cathode side on top of a base region, which is organized into a columnar structure of alternating p- and n-doped pillars. The anode consists of a p-doped emitter--the SJBT is thus a bipolar super junction power device with carrier modulation taking place in only some portion of the base. The super junction structure makes up for fundamentally different device characteristics compared to an IGBT: carrier modulation in the SJBT is made possible by elimination of the reverse bias between p- and n-doped pillars when large quantities of majority carriers are injected from the p-emitter into the p-type pillar. With the electrostatic potential being grounded at the cathode, de-biasing of the pillars as well as carrier modulation will vanish towards the cathode. The unique characteristic of the SJBT on-state is an electron-hole plasma originating at the anode, which will segregate and give place to unipolar current flow in both pillars (de-mixing of the plasma) in the base region close to the cathode. Compared to an IGBT, the SJBT offers the same or lower conduction losses at a very small fraction (25%) of the cost in terms of switching losses.

  11. Power-MOSFET Voltage Regulator (United States)

    Miller, W. N.; Gray, O. E.


    Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

  12. Flexoelectric in-plane switching (IPS) mode with ultra-high-transmittance, low-voltage, low-frequency, and a flicker-free image. (United States)

    Kim, MinSu; Ham, Hyeong Gyun; Choi, Han-Sol; Bos, Philip J; Yang, Deng-Ke; Lee, Joong Hee; Lee, Seung Hee


    The demands for a power-saving mode for displaying static images are ubiquitous not only in portable devices but also in price tags and advertising panels. At a low-frequency driving in liquid crystal displays (LCDs) for low-power consumption, the flexoelectric effect arises even in calamitic liquid crystals and the optical appearance of this physical phenomenon is found to be unusually large, being noticed as an image-flickering. Although the inherent integrated optical transmittance of in-plane switching (IPS) mode is relatively lower than that of fringe-field switching (FFS) mode, the IPS mode shows no static image-flickering but an optical spike (the so-called optical bounce), at the transient moment between signal positive and negative frames. Here, we demonstrate an IPS mode using negative dielectric anisotropy of liquid crystals (Δε mode with Δε mode with Δε mode with Δε > 0). We believe the result will contribute not only to the scientific understanding of the optical appearance of flexoelectric effect but also pave the way for engineering of a superior low-power consumption LCD.

  13. New device to adjust on load the voltage level at power transformers

    Energy Technology Data Exchange (ETDEWEB)

    Plesca, A. [Gh. Asachi Technical Univ. of Iasi, Iasi (Romania); Licau, M. [SCEONSA, Iasi (Romania)


    This paper described a new device designed to provide online step voltage regulation and continuous voltage adjustment. The variable inductance system was built using 2 identical toroidal magnetic cores a single controlled winding designed using a magnetic amplifier principle with a rated power of 800 Va, 2 primary windings, a controlled winding, and a magnetic circuit. A digital relay was used to provide control signals for the driver circuits of power electronic switches and to provide variable inductive reactance. A power unit was designed to control voltage levels for the solid-state switches. The prototype was mounted into a cabinet and provided with power circuits for step voltage adjustment and current transformers. Test conducted with variable resistive loads demonstrated that the device added step voltages in order to maintain voltage levels within admissible limits when secondary voltage forms were lowered. Voltage levels were reduced when the maximum voltage threshold was reached. Waveforms recorded during the tests showed that the new device restored output voltage between admissible limits in less than 200 milliseconds. It was concluded that the device's modular construction will provide greater installation flexibility. 15 refs., 5 figs.

  14. Persistence, switch rates, drug consumption and costs of biological treatment of rheumatoid arthritis: an observational study in Italy

    Directory of Open Access Journals (Sweden)

    Degli Esposti L


    Full Text Available Luca Degli Esposti,1 Ennio Giulio Favalli,2 Diego Sangiorgi,1 Roberta Di Turi,3 Giuseppina Farina,4 Marco Gambera,5 Roberto Ravasio,6 1CliCon S.r.l. – Health, Economics & Outcomes Research, Ravenna, 2Department of Rheumatology, Istituto Ortopedico Gaetano Pini, Milan, 3Local Pharmaceutical and Supplementary Assistance Unit, Roma Local Health Authority D, Rome, 4Internal Management Control Unit – Pharmaceutical Spending Control Sector, Caserta Local Health Authority, Caserta, 5Local Pharmaceutical Service, Bergamo Local Health Authority, Bergamo, 6Health Publishing & Services Srl, Milan, Italy Objectives: The aim of this analysis was to provide an estimate of drug utilization indicators (persistence, switch rate and drug consumption on biologics and the corresponding costs (drugs, admissions and specialist care incurred by the Italian National Health Service in the management of adult patients with rheumatoid arthritis (RA.Methods: We conducted an observational retrospective cohort analysis using the administrative databases of three local health units. We considered all patients aged ≥18 years with a diagnosis of RA and at least one biologic drug prescription between January 2010 and December 2012 (recruitment period. Persistence was defined as maintenance over the last 3 months of the follow-up period of the same biological therapy administered at the index date. A switch was defined as the presence of a biological therapy other than that administered at the index date during the last 3 months of the follow-up period. Hospital admissions (with a diagnosis of RA or other RA-related diagnoses, specialist outpatient services, instrumental diagnostics and pharmaceutical consumption were assessed.Results: The drug utilization analysis took into account only biologics with at least 90 patients on treatment at baseline (adalimumab n=144, etanercept n=236 and infliximab n=94. In each year, etanercept showed better persistence with initial

  15. A New Asymmetrical Current-fed Converter with Voltage Lifting

    Directory of Open Access Journals (Sweden)



    Full Text Available This paper presents a new zero voltage switching current-fed DC-DC converter with high voltage gain. In this converter all switches (main and auxiliary turn on under zero voltage switching and turn off under almost zero voltage switching due to snubber capacitor. Furthermore, the voltage spike across the main switch due to leakage inductance of forward transformer is absorbed. The flyback transformer which is connected to the output in series causes to high voltage gain and less voltage stress on the power devices. Considering high efficiency and voltage gain of this converter, it is suitable for green generated systems such as fuel cells or photovoltaic systems. The presented experimental results verify the integrity of the proposed converter.

  16. Revisiting Uncovered Interest Rate Parity: Switching Between UIP and the Random Walk

    NARCIS (Netherlands)

    R. Huisman (Ronald); R.J. Mahieu (Ronald)


    textabstractIn this paper, we examine in which periods uncovered interest rate parity was likely to hold. Empirical research has shown mixed evidence on UIP. The main finding is that it doesn’t hold, although some researchers were not able to reject UIP in periods with large interest differentials

  17. Present and Future of Semiconductor Pulsed Power Generator ˜Role of Power Semiconductor Devices in Plasma Research˜ 5.High-Repetition-Rate Marx Generator Using Thyristor Switches (United States)

    Maeyama, Mitsuaki

    The Static Marx Generatoris a high-voltage impulse generator using semiconductor switches that borrow their simple trigger operation from the conventional Marx Generator. This commentary presents the principle of successive trigger operation, the high-speed and high-efficiency charging mechanism used in this Static Marx Generator circuit system, and the typical properties of the voltage amplification ratio, i.e. the rise time and charging efficiency.

  18. MCT/MOSFET Switch (United States)

    Rippel, Wally E.


    Metal-oxide/semiconductor-controlled thyristor (MCT) and metal-oxide/semiconductor field-effect transistor (MOSFET) connected in switching circuit to obtain better performance. Offers high utilization of silicon, low forward voltage drop during "on" period of operating cycle, fast turnon and turnoff, and large turnoff safe operating area. Includes ability to operate at high temperatures, high static blocking voltage, and ease of drive.

  19. Loading effect of a barium titanate artificial interface on high voltage capabilities at high charge and discharge rates (United States)

    Yoshikawa, Yumi; Teranishi, Takashi; Hayashi, Hidetaka; Kishimoto, Akira


    Cyclic characteristics of BaTiO3 (BT)-decorated LiCoO2 (LC), for use as an artificial solid electrolyte interface (SEI) were evaluated at high voltages. Within the standard voltage window (i.e., 3.3-4.2 V), the BT-decorated LC exhibited greater capacities for up to 80 cycles compared with both the Al2O3 (paraelectric)-decorated and bare LC SEIs. The discharge capacity retention after 80 cycles (compared with the initial value) was 86.0% for the BT-LC cathode. This is a significant improvement over both the bare LC that showed 19.9% retention and the Al2O3-LC that displayed 71.5% retention. Thereafter, the cyclic stabilities of the BT-LC and bare LC were compared within potential windows at cutoff voltages as high as 4.9 V. In this region, BT decoration yielded marked improvements in capacity retention after 50 cycles, up to a potential of 4.7 V. The post-situ XRD analysis of the cathode sheets showed that BT decoration effectively stabilized the hexagonal crystal structure of the LC, H1, resulting in the said cyclic stability increase. These observations demonstrate that the use of BT in SEI allows a significant increase in working voltage while maintaining the chemical stability of the underlying LC matrix, a key advancement in the perpetual pursuit of ever higher cell energy densities.

  20. Gyromagnetic nonlinear transmission line generator of high voltage pulses modulated at 4 GHz frequency with 1000 Hz pulse repetition rate (United States)

    Ulmasculov, M. R.; Sharypov, K. A.; Shunailov, S. A.; Shpak, V. G.; Yalandin, M. I.; Pedos, M. S.; Rukin, S. N.


    Results of testing of a generator based on a solid-state drive and the parallel gyromagnetic nonlinear transmission lines with external bias are presented. Stable rf-modulated high-voltage nanosecond pulses were shaped in each of the four channels in 1 s packets with 1000 Hz repetition frequencies. Pulse amplitude reaches -175 kV, at a modulation depth of rf-oscillations to 50 % and the effective frequency ∼4 GHz.

  1. A Transformer-less Partial Power Boost Converter for PV Applications Using a Three-Level Switching Cell

    Energy Technology Data Exchange (ETDEWEB)

    Agamy, Mohammed; Harfman-Todorovic, Maja; Elasser, Ahmed; Essakiappan, Somasundaram


    Photovoltaic architectures with distributed power electronics provide many advantages in terms of energy yield as well as system level optimization. As the power level of the solar farm increases it becomes more beneficial to increase the dc collection network voltage, which requires the use of power devices with higher voltage ratings, and thus making the design of efficient, low cost, distributed power converters more challenging. In this paper a simple partial power converter topology is proposed. The topology is implemented using a three-level switching cell, which allows the use of semiconductor devices with lower voltage rating; thus improving design and performance and reducing converter cost. This makes the converters suitable for use for medium to high power applications where dc-link voltages of 600V~1kV may be needed without the need for high voltage devices. Converter operation and experimental results are presented for two partial power circuit variants using three-level switching cells.

  2. Control synthesis of switched systems

    CERN Document Server

    Zhao, Xudong; Niu, Ben; Wu, Tingting


    This book offers its readers a detailed overview of the synthesis of switched systems, with a focus on switching stabilization and intelligent control. The problems investigated are not only previously unsolved theoretically but also of practical importance in many applications: voltage conversion, naval piloting and navigation and robotics, for example. The book considers general switched-system models and provides more efficient design methods to bring together theory and application more closely than was possible using classical methods. It also discusses several different classes of switched systems. For general switched linear systems and switched nonlinear systems comprising unstable subsystems, it introduces novel ideas such as invariant subspace theory and the time-scheduled Lyapunov function method of designing switching signals to stabilize the underlying systems. For some typical switched nonlinear systems affected by various complex dynamics, the book proposes novel design approaches based on inte...

  3. Switched capacitor DC-DC converter with switch conductance modulation and Pesudo-fixed frequency control

    DEFF Research Database (Denmark)

    Larsen, Dennis Øland; Vinter, Martin; Jørgensen, Ivan Harald Holger

    A switched capacitor dc-dc converter with frequency-planned control is presented. By splitting the output stage switches in eight segments the output voltage can be regulated with a combination of switching frequency and switch conductance. This allows for switching at predetermined frequencies, 31...... skipping controller and yields a 84.8% reduction in worst-case low-load output ripple voltage and a 1.5% increase in peak efficiency reaching 92.5%, while also providing a predictable spectrum of the switching noise, reducing the risk of interfering with other sensitive circuits....


    Directory of Open Access Journals (Sweden)



    Full Text Available In this paper, a novel soft-switched interleaved DC-DC converter which provides a high voltage gain of 12 is proposed. Voltage gain of the basic interleaved boost converter is extended by using diode-capacitor multiplier (DCM cells. The switches are operated at a nominal duty ratio of 0.5. The voltage stress on the power switches and diodes is only a fraction of the output voltage. To enhance the operating power conversion efficiency, the switches are turned ON at zero voltage condition. Experimental results of 18-216V, 100W prototype converter validate the operating principle and the advantageous features of the presented converter.

  5. A Cascade Multilevel Converter of Switched Reluctance Motor and Its Control Timing Sequence

    National Research Council Canada - National Science Library

    Runquan Meng; Min Wu


    ... voltage switched reluctance motor. Based on introducing the main circuit topology, the operating modes and the voltage superposition law of proposed converter, the control strategy for the switched reluctance drive by the use...

  6. Studies on the radicidation of natural food colorants. Effects of electron energy (accelerating voltages) and dose rate of ionizing radiation on functional properties of beet red colorant

    Energy Technology Data Exchange (ETDEWEB)

    Higashimura, Yutaka; Tada, Mikiro [Okayama Univ. (Japan). Graduate School of Natural Science and Technology; Furuta, Masakazu [Osaka Prefectural Univ., Sakai (Japan). Research Inst. for Advanced Science and Technology


    In order to the practical use of radicidation of beet red, natural food colorant with low heat stability and high possibility of microbe contamination, we studied on the energy dependency and dose rate effect for the influence on functional properties of the beet red colorant. For the elucidation of energy dependency, the {gamma}-ray (1.33 MeV) and electron beams with different accelerating voltages (0.75, 1, 2.5, 5 and 10 MeV) were used. The dose rate effect was studied under the different dose rate by using {gamma}-ray (0.723, 1.91 and 4.55 kGy/h) and electron beams with accelerating voltage of 10 MeV (1.0 x 10{sup 3}, 2.6 x 10{sup 3}, 7.0 x 10{sup 3}, 7.0 x 10{sup 3}, 2.0 x 10{sup 4} and 5.0 x 10{sup 4} kGy/h). The results obtained in this study showed that regardness of these energy and dose rate, the functional properties of the beet red colorant were little affected by irradiation less than 25 kGy of ionizing radiations. (author)

  7. Modeling and simulation of GaN step-up power switched capacitor converter (United States)

    Alateeq, Ayoob S.; Almalaq, Yasser A.; Matin, Mohammad A.


    This paper discusses a proposed DC-DC switched capacitor converter for low voltage electronic products. The proposed converter is a two-level power switched capacitor (PSC) which is a boost converter. The suitability to convert a voltage into four times higher than its input is one of the converter's objectives. Because of the proposed two-level PSC consist of eight switches and five capacitors, it occupies a small area of the electronic products. The eight switches were selected to be GaN transistors to maintain the efficiency at high rated power or high temperatures. The LTSpice simulator was used to test the proposed model. Since the design contains semiconductor elements such (GaN transistor), then 10% error is a reasonable variance between the mathematical and simulation results.

  8. A Series-LC-Filtered Active Trap Filter for High Power Voltage Source Inverter

    DEFF Research Database (Denmark)

    Bai, Haofeng; Wang, Xiongfei; Loh, Poh Chiang


    Passive trap filters are widely used in high power Voltage Source Inverters (VSI) for the switching harmonic attenuation. The usage of the passive trap filters requires clustered and fixed switching harmonic spectrum, which is not the case for low pulse-ratio or Variable Switching Frequency (VSF...... current control of the auxiliary converter, which can be challenging considering that the switching harmonics have very high orders. In this paper, an Active Trap Filter (ATF) based on output impedance shaping is proposed. It is able to bypass the switching harmonics by providing nearly zero output...... impedance. A series-LC-filter is used to reduce the power rating and synthesize the desired output impedance of the ATF. Compared with the existing approaches, the compensated frequency range is greatly enlarged. Also, the current reference is simply set to zero, which reduces the complexity of the control...

  9. 60 V tolerance full symmetrical switch for battery monitor IC (United States)

    Zhang, Qidong; Yang, Yintang; Chai, Changchun


    For stacked battery monitoring IC high speed and high precision voltage acquisition requirements, this paper introduces a kind of symmetrical type high voltage switch circuit. This kind of switch circuit uses the voltage following structure, which eliminates the leakage path of input signals. At the same time, this circuit adopts a high speed charge pump structure, in any case the input signal voltage is higher than the supply voltage, it can fast and accurately turn on high voltage MOS devices, and convert the battery voltage to an analog to digital converter. The proposed high voltage full symmetry switch has been implemented in a 0.18 μm BCD process; simulated and measured results show that the proposed switch can always work properly regardless of the polarity of the voltage difference between the input signal ports and an input signal higher than the power supply. Project supported by the National Natural Science Foundation of China (No. 61334003).

  10. Reliable switching in MRAM and multiferroic logic (United States)

    Munira, Kamaram; Bandyopadhyay, Supriyo; Atulasimha, Jayasimha; Chen, Eugene; Ghosh, Avik W.


    Low reliable writing in spintronic devices limits their applicability in the automotive and defense industries. Coupling stochastic macromagnetic simulator with quantum transport, we show how greater reliable switching can be achieved in MRAM and multiferroic logic. Using a combination of spin-transfer torque and small applied perpendicular field in MRAM, the error rate can be considerably reduced for a given voltage pulse. In multiferroic logic, strain plays the role of the magnetic field. Information is passed along an array of nanomagnets (NM) (magnetostrictive + piezoelectric layers) through dipole coupling with neighboring NMs. A low voltage applied to the piezoelectric element causes the NM's magnetization to switch to its hard axis. Upon releasing the stress, the magnetization of the NM relaxes to the easy axis, with its final orientation determined by the dipolar coupling with the left NM, thus achieving a low power Bennett clocked computation. In the face of stagnation points along the potential energy landscape, the success rate of the straintronic switching can be controlled with by how fast the stress is removed from the NM. (Funding: DARPA, GRANDIS, NSF-NEB).

  11. Amorphous metal based nanoelectromechanical switch

    KAUST Repository

    Mayet, Abdulilah M.


    Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

  12. Switching model photovoltaic pumping system (United States)

    Anis, Wagdy R.; Abdul-Sadek Nour, M.

    Photovoltaic (PV) pumping systems are widely used due to their simplicity, high reliability and low cost. A directly-coupled PV pumping system is the most reliable and least-cost PV system. The d.c. motor-pump group is not, however, working at its optimum operating point. A battery buffered PV pumping system introduces a battery between the PV array and the d.c. motor-pump group to ensure that the motor-pump group is operating at its optimum point. The size of the battery storage depends on system economics. If the battery is fully charged while solar radiation is available, the battery will discharge through the load while the PV array is disconnected. Hence, a power loss takes place. To overcome the above mentioned difficulty, a switched mode PV pumping is proposed. When solar radiation is available and the battery is fully charged, the battery is disconnected and the d.c. motor-pump group is directly coupled to the PV array. To avoid excessive operating voltage for the motor, a part of the PV array is switched off to reduce the voltage. As a result, the energy loss is significantly eliminated. Detailed analysis of the proposed system shows that the discharged water increases by about 10% when compared with a conventional battery-buffered system. The system transient performance just after the switching moment shows that the system returns to a steady state in short period. The variations in the system parameters lie within 1% of the rated values.

  13. Blocking performance of a burst-outputted model considering different service rates and different output port-selected probabilities in an optical burst switching core node (United States)

    Hou, Rui; Changyue, Jiana; He, Tingting; Mao, Tengyue; Yu, Jianwei; Lei, Bo


    In an optical burst switching core node, each output port is equipped with a different network interface unit that can provide a specific data rate. Bursts will use different probabilities of select output ports, which is in accordance to the path-length metric-based routing optimal algorithm and wavelength resource situation. Previous studies ignore this issue. We establish a burst-outputted model considering the different service rate of output ports and different port-selected probabilities. We calculate burst-blocking probability and analyze the relationship between service rate and output-port-selected probability in detail.

  14. Comparative effect of candesartan and amlodipine, and effect of switching from valsartan, losartan, telmisartan and olmesartan to candesartan, on early morning hypertension and heart rate. (United States)

    Minatoguchi, Shinya; Aoyama, Takuma; Kawai, Naoki; Iwasa, Mitsunori; Oda, Masayuki; Kida, Keiji; Kojima, Syojiro; Goto, Naomi; Goto, Masahiro; Sugishita, Fusayoshi; Takai, Kuniyuki; Tanaka, Ryuhei; Hiei, Keiji; Minagawa, Taro; Yamamoto, Noritaka; Watanabe, Ikuo; Yasue, Takao; Kobayashi, Hiroshi


    Early morning hypertension and a high heart rate are risk factors for cardiovascular disease. The DOHSAM study was designed to evaluate the effect of candesartan on early morning blood pressure (BP) and heart rate in hypertensives. We used a prospective, randomized, open-label design. Protocol 1: Patients with early morning BP more than 135/85 mmHg who were not on any antihypertensive drug or on candesartan were given amlodipine 2.5 mg/day (amlodipine group, n = 22) or added candesartan 4 mg/day (candesartan group, n = 36). Candesartan or amlodipine was added when BP did not fall lower than 135/85 mmHg. Protocol 2: Early morning hypertensives who were on other angiotensin receptor blockers (ARBs) (n = 50) such as valsartan, losartan, telmisartan and olmesartan were switched to candesartan. Early morning BP significantly decreased in the candesartan group compared with the amlodipine group 9 and 12 months after treatment. Switching other ARBs except for olmesartan to candesartan significantly decreased early morning systolic and diastolic BP 3, 6, 9 and 12 months after treatment. Heart rate in the office significantly decreased by switching to candesartan 6, 9 and 12 months after treatment. In conclusion, candesartan significantly decreased early morning hypertension more than amlodipine or other ARBs except olmesartan in early morning hypertensives.

  15. 49 CFR 236.551 - Power supply voltage; requirement. (United States)


    ... 49 Transportation 4 2010-10-01 2010-10-01 false Power supply voltage; requirement. 236.551 Section... supply voltage; requirement. The voltage of power supply shall be maintained within 10 percent of rated voltage. ...

  16. Switching in electrical transmission and distribution systems

    CERN Document Server

    Smeets, René; Kapetanovic, Mirsad; Peelo, David F; Janssen, Anton


    Switching in Electrical Transmission and Distribution Systems presents the issues and technological solutions associated with switching in power systems, from medium to ultra-high voltage. The book systematically discusses the electrical aspects of switching, details the way load and fault currents are interrupted, the impact of fault currents, and compares switching equipment in particular circuit-breakers. The authors also explain all examples of practical switching phenomena by examining real measurements from switching tests. Other highlights include: up to date commentary on new develo

  17. Light-activated resistance switching in SiOx RRAM devices (United States)

    Mehonic, A.; Gerard, T.; Kenyon, A. J.


    We report a study of light-activated resistance switching in silicon oxide (SiOx) resistive random access memory (RRAM) devices. Our devices had an indium tin oxide/SiOx/p-Si Metal/Oxide/Semiconductor structure, with resistance switching taking place in a 35 nm thick SiOx layer. The optical activity of the devices was investigated by characterising them in a range of voltage and light conditions. Devices respond to illumination at wavelengths in the range of 410-650 nm but are unresponsive at 1152 nm, suggesting that photons are absorbed by the bottom p-type silicon electrode and that generation of free carriers underpins optical activity. Applied light causes charging of devices in the high resistance state (HRS), photocurrent in the low resistance state (LRS), and lowering of the set voltage (required to go from the HRS to LRS) and can be used in conjunction with a voltage bias to trigger switching from the HRS to the LRS. We demonstrate negative correlation between set voltage and applied laser power using a 632.8 nm laser source. We propose that, under illumination, increased electron injection and hence a higher rate of creation of Frenkel pairs in the oxide—precursors for the formation of conductive oxygen vacancy filaments—reduce switching voltages. Our results open up the possibility of light-triggered RRAM devices.

  18. Overvoltages during switching operations of vacuum switching devices

    Directory of Open Access Journals (Sweden)

    Vukelja Petar


    Full Text Available This paper presents the results of experimental studies of voltage phenomena in the switching operations of vacuum switching devices made by various manufacturers in several different configurations of 6 kV, 10 kV, 20 kV and 35 kV networks. During switching-on operations of the inductive loads, re-ignition of the electric arc between the contacts of the vacuum switching devices appears. Each arc ignition appearance leads to overvoltages with gradients close to those of lightning overvoltages. Switching-off operations of the inductive loads with vacuum switching devices leads to the cutting of the current before it passed through a natural zero and the appearance of multiple re-ignition of the arc between their contacts. All this leads to significant overvoltages on the equipment insulation. The analysis of surges in the studied networks, and the measures and means to reduce the stress of isolation are proposed.

  19. Interdisciplinary Physics and Related Areas of Science and Technology Entropy Production Rate Changes in Lysogeny/Lysis Switch Regulation of Bacteriophage Lambda (United States)

    Ding, Hui; Luo, Liao-Fu; Lin, Hao


    According to the chemical kinetic model of lysogeny/lysis switch in Escherichia coli (E. coli) infected by bacteriophage λ, the entropy production rates of steady states are calculated. The results show that the lysogenic state has lower entropy production rate than lytic state, which provides an explanation on why the lysogenic state of λ phage is so stable. We also notice that the entropy production rates of both lysogenic state and lytic state are lower than that of saddle-point and bifurcation state, which is consistent with the principle of minimum entropy production for living organism in nonequilibrium stationary state. Subsequently, the relations between CI and Cro degradation rates at two bifurcations and the changes of entropy production rate with CI and Cro degradation are deduced. The theory and method can be used to calculate entropy change in other molecular network.

  20. Switched reluctance motor drives

    Indian Academy of Sciences (India)

    Davis RM, Ray WF, Blake RJ 1981 Inverter drive for switched reluctance: circuits and component ratings. Inst. Elec. Eng. Proc. B128: 126-136. Ehsani M. 1991 Position Sensor elimination technique for the switched reluctance motor drive. US Patent No. 5,072,166. Ehsani M, Ramani K R 1993 Direct control strategies based ...

  1. Quantum cryptography without switching. (United States)

    Weedbrook, Christian; Lance, Andrew M; Bowen, Warwick P; Symul, Thomas; Ralph, Timothy C; Lam, Ping Koy


    We propose a new coherent state quantum key distribution protocol that eliminates the need to randomly switch between measurement bases. This protocol provides significantly higher secret key rates with increased bandwidths than previous schemes that only make single quadrature measurements. It also offers the further advantage of simplicity compared to all previous protocols which, to date, have relied on switching.

  2. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)


    Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

  3. Voltage harmonic elimination with RLC based interface smoothing filter (United States)

    Chandrasekaran, K.; Ramachandaramurthy, V. K.


    A method is proposed for designing a Dynamic Voltage Restorer (DVR) with RLC interface smoothing filter. The RLC filter connected between the IGBT based Voltage Source Inverter (VSI) is attempted to eliminate voltage harmonics in the busbar voltage and switching harmonics from VSI by producing a PWM controlled harmonic voltage. In this method, the DVR or series active filter produces PWM voltage that cancels the existing harmonic voltage due to any harmonic voltage source. The proposed method is valid for any distorted busbar voltage. The operating VSI handles no active power but only harmonic power. The DVR is able to suppress the lower order switching harmonics generated by the IGBT based VSI. Good dynamic and transient results obtained. The Total Harmonic Distortion (THD) is minimized to zero at the sensitive load end. Digital simulations are carried out using PSCAD/EMTDC to validate the performance of RLC filter. Simulated results are presented.

  4. Over-voltage protection system and method (United States)

    Chi, Song; Dong, Dong; Lai, Rixin


    An over-voltage protection system includes an electronic valve connected across two terminals of a circuit and an over-voltage detection circuit connected across one of the plurality of semiconductor devices for detecting an over-voltage across the circuit. The electronic valve includes a plurality of semiconductor devices connected in series. The over-voltage detection circuit includes a voltage divider circuit connected to a break-over diode in a way to provide a representative low voltage to the break-over diode and an optocoupler configured to receive a current from the break-over diode when the representative low voltage exceeds a threshold voltage of the break-over diode indicating an over-voltage condition. The representative low voltage provided to the break-over diode represents a voltage across the one semiconductor device. A plurality of self-powered gate drive circuits are connected to the plurality of semiconductor devices, wherein the plurality of self-powered gate drive circuits receive over-voltage triggering pulses from the optocoupler during the over-voltage condition and switch on the plurality of semiconductor devices to bypass the circuit.

  5. Switching antidepressants

    African Journals Online (AJOL)

    may result in toxic drug-drug interactions, worsening depression or unpleasant discontinuation reactions. Switching strategies to minimise these risks include immediate switching, cross-tapering or incorporating a washout period. Immediate switching is generally possible when substituting a selective serotonin reuptake ...

  6. Chirp and error rate analyses of an optical-injection gain-switching VCSEL based all-optical NRZ-to-PRZ converter. (United States)

    Lin, Chia-Chi; Kuo, Hao-Chung; Peng, Peng-Chun; Lin, Gong-Ru


    Optically injection-locked single-wavelength gain-switching VCSEL based all-optical converter is demonstrated to generate RZ data at 2.5 Gbit/s with bit-error-rate of 10(-9) under receiving power of -29.3 dBm. A modified rate equation model is established to elucidate the optical injection induced gain-switching and NRZ-to-RZ data conversion in the VCSEL. The peak-to-peak frequency chirp of the VCSEL based NRZ-to-RZ is 4.5 GHz associated with a reduced frequency chirp rate of 178 MHz/ps at input optical NRZ power of -21 dBm, which is almost decreasing by a factor of 1/3 comparing with chirp on the SOA based NRZ-to-RZ converter reported previously. The power penalty of the BER measured back-to-back is about 2 dB from 1 Gbit/s to 2.5 Gbit/s.

  7. Ultrathin Layered SnSe Nanoplates for Low Voltage, High-Rate, and Long-Life Alkali-Ion Batteries. (United States)

    Wang, Wei; Li, Peihao; Zheng, Henry; Liu, Qiao; Lv, Fan; Wu, Jiandong; Wang, Hao; Guo, Shaojun


    2D electrode materials with layered structures have shown huge potential in the fields of lithium- and sodium-ion batteries. However, their poor conductivity limits the rate performance and cycle stability of batteries. Herein a new colloid chemistry strategy is reported for making 2D ultrathin layered SnSe nanoplates (SnSe NPs) for achieving more efficient alkali-ion batteries. Due to the effect of weak Van der Waals forces, each semiconductive SnSe nanoplate stacks on top of each other, which can facilitate the ion transfer and accommodate volume expansion during the charge and discharge process. This unique structure as well as the narrow-bandgap semiconductor property of SnSe simultaneously meets the requirements of achieving fast ionic and electronic conductivities for alkali-ion batteries. They exhibit high capacity of 463.6 mAh g-1 at 0.05 A g-1 for Na-ion batteries and 787.9 mAh g-1 at 0.2 A g-1 for Li-ion batteries over 300 cycles, and also high stability for alkali-ion batteries. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Impact of the Voltage Transients after a Fast Power Abort on the Quench Detection System in the LHC Main Dipole Chain

    CERN Document Server

    Ravaioli, E; Formenti, F; Montabonnet, V; Pojer, M; Schmidt, R; Siemko, A; Solfaroli Camillocci, A; Steckert, J; Thiesen, H; Verweij, A


    A Fast Power Abort in the LHC superconducting main dipole circuit consists in the switch-off of the power converter and the opening of the two energy-extraction switches. Each energy-extraction unit is composed of redundant electromechanical breakers, which are opened to force the current through an extraction resistor. When a switch is opened arcing occurs in the switch and a voltage of up to 1 kV builds up across the extraction resistor with a typical ramp rate of about 80 kV/s. The subsequent voltage transient propagates through the chain of 154 dipoles and superposes on the voltage waves caused by the switch-off of the power converter. The resulting effect caused intermittent triggering of the quench protection systems along with heater firings in the magnets when the transient occurred during a ramp of the current. A delay between power converter switch-off and opening of the energy-extraction switches was introduced to prevent this effect. Furthermore, the output filters of the power converters were mod...

  9. High rate of virological failure and low rate of switching to second-line treatment among adolescents and adults living with HIV on first-line ART in Myanmar, 2005-2015 (United States)

    Harries, Anthony D.; Kumar, Ajay M. V.; Oo, Myo Minn; Kyaw, Khine Wut Yee; Win, Than; Aung, Thet Ko; Min, Aung Chan; Oo, Htun Nyunt


    Background The number of people living with HIV on antiretroviral treatment (ART) in Myanmar has been increasing rapidly in recent years. This study aimed to estimate rates of virological failure on first-line ART and switching to second-line ART due to treatment failure at the Integrated HIV Care program (IHC). Methods Routinely collected data of all adolescent and adult patients living with HIV who were initiated on first-line ART at IHC between 2005 and 2015 were retrospectively analyzed. The cumulative hazard of virological failure on first-line ART and switching to second-line ART were estimated. Crude and adjusted hazard ratios were calculated using the Cox regression model to identify risk factors associated with the two outcomes. Results Of 23,248 adults and adolescents, 7,888 (34%) were tested for HIV viral load. The incidence rate of virological failure among those tested was 3.2 per 100 person-years follow-up and the rate of switching to second-line ART among all patients was 1.4 per 100 person-years follow-up. Factors associated with virological failure included: being adolescent; being lost to follow-up at least once; having WHO stage 3 and 4 at ART initiation; and having taken first-line ART elsewhere before coming to IHC. Of the 1032 patients who met virological failure criteria, 762 (74%) switched to second-line ART. Conclusions We found high rates of virological failure among one third of patients in the cohort who were tested for viral load. Of those failing virologically on first-line ART, about one quarter were not switched to second-line ART. Routine viral load monitoring, especially for those identified as having a higher risk of treatment failure, should be considered in this setting to detect all patients failing on first-line ART. Strategies also need to be put in place to prevent treatment failure and to treat more of those patients who are actually failing. PMID:28182786

  10. Physical limitations to efficient high-speed spin-torque switching in magnetic tunnel junctions (United States)

    Heindl, R.; Rippard, W. H.; Russek, S. E.; Kos, A. B.


    We have investigated the physical limitations to efficient high-speed spin-torque switching by means of write error rates both experimentally as well as through macrospin simulations. The spin-torque-induced write operations were performed on in-plane MgO magnetic tunnel junctions. The write error rates were determined from up to 106 switching events as a function of pulse amplitude and duration (5 to 100 ns) for devices with different thermal stability factors. Both experiments and simulations show qualitatively similar results. In particular, the write error rates as a function of pulse voltage amplitude increase at higher rates for pulse durations below ≈50 ns. Simulations show that the write error rates can be reduced only to some extent by the use of materials with perpendicular anisotropy and reduced damping, whereas noncollinear orientation of the spin current polarization and the magnetic easy axis increases the write error rates. The cause for the write error rates is related to the underlying physics of spin-torque switching and the occurrence of the stagnation point on the magnetization switching trajectory where the spin-torque disappears and the device loses the energy needed to switch. The stagnation point can be accessed either during the initial magnetization distribution or by thermal diffusion during the switching process.

  11. A Novel Three-Phase Three-Wire Dynamic Voltage Restorer (United States)

    Zhou, W. P.; Wang, Z. Y.; Wu, Z. G.


    A novel optimal control method of three-phase three-wire Dynamic Voltage Restorer (DVR) and its simplified topological structure are proposed. Based on virtual-floating-ground analysis method, a time-domain mathematical model and the control equation of DVR’s converter are established; the optimal feasible solution with minimum objective function value of the control equation is deduced. Compensation voltage detection is based on digital phase lock, and the switching time is calculated by line voltages, the control performance under the proposed control strategy is analyzed, which greatly improve the utilization rate of DC side voltage and the DVR’s compensation capability. The simulation and experiment results of three-phase three-wire DVR under the proposed algorithm are given; the results show its validity and feasibility.

  12. Development of ultra-short high voltage pulse technology using magnetic pulse compression

    Energy Technology Data Exchange (ETDEWEB)

    Cha, Byung Heon; Kim, S. G.; Nam, S. M.; Lee, B. C.; Lee, S. M.; Jeong, Y. U.; Cho, S. O.; Jin, J. T.; Choi, H. L


    The control circuit for high voltage switches, the saturable inductor for magnetic assist, and the magnetic pulse compression circuit were designed, constructed, and tested. The core materials of saturable inductors in magnetic pulse compression circuit were amorphous metal and ferrite and total compression stages were 3. By the test, in high repetition rate, high pulse compression were certified. As a result of this test, it became possible to increase life-time of thyratrons and to replace thyratrons by solid-state semiconductor switches. (author). 16 refs., 16 tabs.

  13. Carrier-Based Common Mode Voltage Control Techniques in Three-Level Diode-Clamped Inverter

    Directory of Open Access Journals (Sweden)

    Pradyumn Chaturvedi


    Full Text Available Switching converters are used in electric drive applications to produce variable voltage, variable frequency supply which generates harmful large dv/dt and high-frequency common mode voltages (CMV. Multilevel inverters generate lower CMV as compared to conventional two-level inverters. This paper presents simple carrier-based technique to control the common mode voltages in multilevel inverters using different structures of sine-triangle comparison method such as phase disposition (PD, phase opposition disposition (POD by adding common mode voltage offset signal to actual reference voltage signal. This paper also presented the method to optimize the magnitude of this offset signal to reduce CMV and total harmonic distortion in inverter output voltage. The presented techniques give comparable performance as obtained in complex space vector-based control strategy, in terms of number of commutations, magnitude, and rate of change of CMV and harmonic profile of inverter output voltage. Simulation and experimental results presented confirm the effectiveness of the proposed techniques to control the common mode voltages.

  14. IUD discontinuation rates, switching behavior, and user satisfaction: findings from a retrospective analysis of a mobile outreach service program in Pakistan

    Directory of Open Access Journals (Sweden)

    Azmat SK


    Full Text Available Syed Khurram Azmat, Waqas Hameed, Ghulam Mustafa, Wajahat Hussain, Aftab Ahmed, Mohsina BilgramiMarie Stopes Society, Research and Metrics Department, Technical Services, Karachi, Sindh, PakistanBackground: In Pakistan, the uptake rate for the intrauterine device (IUD is very low at 2.5%. The most popular modern contraceptive methods in Pakistan are female sterilization and use of condoms. The Marie Stopes Society established its mobile outreach service delivery program with the aim of increasing use of modern quality contraceptive services, including the long-term reversible IUD, by women living in hard-to-reach areas. The present study attempts to assess IUD discontinuation rates and associated factors, including switching behavior and level of satisfaction with this type of service delivery.Methods: Using a cross-sectional approach, we contacted 681 women who had received an IUD from the Marie Stopes Society mobile outreach program during July and August 2009. Successful interviews were conducted with 639 of these women using a structured questionnaire. The data were analyzed with Stata 11.2 using simple descriptive Chi-square and Cox proportional techniques.Results: Analysis revealed that 19.4% (95% confidence interval 16.3–22.5 of the women discontinued use of their IUD at 10 months and, of these women, the majority (69.4% cited side effects as the main reason for discontinuation. Other factors, such as geographical catchment province, age of the woman, history of contraceptive use before IUD insertion, and side effects following insertion of the device, were found to be significantly associated with IUD. Amongst the women who had their IUD removed, 56.5% did not switch to any other contraceptive method, while 36.3% switched to either short-term or traditional methods, such as withdrawal, rhythm, and folk methods. Degree of satisfaction with the device was also significantly associated with discontinuation.Conclusion: Early

  15. Submicrosecond Power-Switching Test Circuit (United States)

    Folk, Eric N.


    A circuit that changes an electrical load in a switching time shorter than 0.3 microsecond has been devised. This circuit can be used in testing the regulation characteristics of power-supply circuits . especially switching power-converter circuits that are supposed to be able to provide acceptably high degrees of regulation in response to rapid load transients. The combination of this power-switching circuit and a known passive constant load could be an attractive alternative to a typical commercially available load-bank circuit that can be made to operate in nominal constant-voltage, constant-current, and constant-resistance modes. The switching provided by a typical commercial load-bank circuit in the constant-resistance mode is not fast enough for testing of regulation in response to load transients. Moreover, some test engineers do not trust the test results obtained when using commercial load-bank circuits because the dynamic responses of those circuits are, variously, partly unknown and/or excessively complex. In contrast, the combination of this circuit and a passive constant load offers both rapid switching and known (or at least better known) load dynamics. The power-switching circuit (see figure) includes a signal-input section, a wide-hysteresis Schmitt trigger that prevents false triggering in the event of switch-contact bounce, a dual-bipolar-transistor power stage that drives the gate of a metal oxide semiconductor field-effect transistor (MOSFET), and the MOSFET, which is the output device that performs the switching of the load. The MOSFET in the specific version of the circuit shown in the figure is rated to stand off a potential of 100 V in the "off" state and to pass a current of 20 A in the "on" state. The switching time of this circuit (the characteristic time of rise or fall of the potential at the drain of the MOSFET) is .300 ns. The circuit can accept any of three control inputs . which one depending on the test that one seeks to perform: a

  16. Triple voltage dc-to-dc converter and method (United States)

    Su, Gui-Jia


    A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

  17. High-Efficiency Isolated Boost DCDC Converter for High-Power Low-Voltage Fuel-Cell Applications

    DEFF Research Database (Denmark)

    Nymand, Morten; Andersen, Michael A. E.


    of the primary-switch voltage rating can thus be avoided, significantly reducing switch-conduction losses. Finally, silicon carbide rectifying diodes allow fast diode turn-off, further reducing losses. Detailed test results from a 1.5-kW full-bridge boost dc-dc converter verify the theoretical analysis......A new design approach achieving very high conversion efficiency in low-voltage high-power isolated boost dc-dc converters is presented. The transformer eddy-current and proximity effects are analyzed, demonstrating that an extensive interleaving of primary and secondary windings is needed to avoid...... and demonstrate very high conversion efficiency. The efficiency at minimum input voltage and maximum power is 96.8%. The maximum efficiency of the proposed converter is 98%....

  18. A Metabolic Switch

    DEFF Research Database (Denmark)

    Hjorth, Poul G.

    Our muscles are metabolically flexible, i.e., they are capable of `switching' between two types of oxidation: (1) when fasting, a predominantly lipid oxidation with high rates of fatty acid uptake, and (2) when fed, suppression of lipid oxidation in favour of increased glucose uptake, oxidation...... and storage, in response to insulin. One of the many manifestations of obesity and Type 2 diabetes is an insulin resistance of the skeletal muscles, which suppresses this metabolic switch. This talk describes recent development of a low-dimensional system of ODEs that model the metabolic switch, displaying...

  19. A Switched-Capacitor Low-Pass Filter with Dynamic Switching Bias OP Amplifiers

    Directory of Open Access Journals (Sweden)

    Hiroo Wakaumi


    Full Text Available A switched capacitor low-pass filter employing folded-cascode CMOS OP Amps with a dynamic switching bias circuit capable of processing video signals, which enables low power consumption, and operation in wide bandwidths and low power supply voltages, is proposed. In this filter, charge transfer operations through two-phase clock pulses during the on-state period of the OP Amps and a non-charge transfer operation during their remaining off-state period are separated. Through simulations, it was shown that the low-pass filter with an OP Amp switching duty ratio of 50 % is able to operate at a 14.3 MHz high-speed dynamic switching rate, allowing processing video signals, and a dissipated power of 68 % of that observed in the static operation of the OP Amps and a full charge transfer operation without separation of a cycle period. The gain below -31 dB in the frequency response, which is suitable, was obtained at over 6 MHz within a stop-band. Especially high attenuation in 5 MHz was achieved under the optimized condition of load capacitances (4 pF of OP Amps.

  20. Saturation behavior of silicon Auston switches

    Energy Technology Data Exchange (ETDEWEB)

    Dunham, M. E.; Ziemba, F.; Moross, J.


    The laser-energized photoconductive switch (Auston switch) has beendescribed previously with various applications. We report new measurementsinvestigating the physical behavior of several types of silicon Auston switches,establishing basic quantum efficiency, charge-voltage behavior, and voltage-timeresponse. Previously predicted nonlinear effects are observed, resulting indepartures from ideal performance for most designs. However, operation in thesaturated mode and a transmission line environment allows several designs toproduce a step waveform that gives previously unattainable combinations ofamplitude and rise time. In particular, the goal of a low aberration, 150-V,35-ps step has been achieved, and process parameters affecting this performanceare described.

  1. Detail study of SiC MOSFET switching characteristics

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig


    This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage...... and current are presented. Switching losses analysis is made according to the experiment results. The switching characteristics study and switching losses analysis could give some guidelines of gate driver IC and gate resistance selection, switching losses estimation and circuit design of SiC MOSFETs....

  2. Three Phase Six-Switch PWM Buck Rectifier with Power Factor Improvement

    DEFF Research Database (Denmark)

    Zafar Ullah Khan, M; Mohsin Naveed, M.; Hussain, Dil Muhammad Akbar


    variable output voltage. Small size energy storing components are required depending upon switching frequency. MATLAB simulation is performed and modified Sinusoidal Pulse Width Modulation(SPWM) switching technique is used in 3kW prototype converter to demonstrate low input current THD, nearly unity...... displacement factor, well regulated output voltage and reduced switching losses compared to conventional SPWM....

  3. Multistate resistive switching in silver nanoparticle films (United States)

    Sandouk, Eric J.; Gimzewski, James K.; Stieg, Adam Z.


    Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications. Here we investigate the nonlinear current-voltage behavior and resistive switching properties of composite nanoparticle films comprising a large collective of metal-insulator-metal junctions. Silver nanoparticles prepared via the polyol process and coated with an insulating polymer layer of tetraethylene glycol were deposited onto silicon oxide substrates. Activation required a forming step achieved through application of a bias voltage. Once activated, the nanoparticle films exhibited controllable resistive switching between multiple discrete low resistance states that depended on operational parameters including the applied bias voltage, temperature and sweep frequency. The films’ resistance switching behavior is shown here to be the result of nanofilament formation due to formative electromigration effects. Because of their tunable and distinct resistance states, scalability and ease of fabrication, nanoparticle films have a potential place in memory technology as resistive random access memory cells.

  4. Effect of circuital currents on the speed and efficiency of picosecond-range switching in a GaAs avalanche transistor (United States)

    Vainshtein, Sergey; Yuferev, Valentin; Kostamovaara, Juha


    Ultrafast (picosecond range) switching of a GaAs-based BJT (bipolar junction transistor) in the avalanche mode has recently been demonstrated experimentally. It was found to be caused by the formation and spread of ultra-high amplitude multiple Gunn domains, which cause extremely powerful avalanching in the volume of the switching filaments. Unavoidable parasitic impedance of an external circuit limits the rate of avalanche carrier generation in the channels, however, which slows down the switching and increases the residual voltage across the switch. We present here the results of simulations which show that the switching transient can be significantly accelerated and the residual voltage reduced due to the supporting of a higher current density in the channels by the charge stored in the barrier capacitance of the non-switched part of the structure. The corresponding circuital currents are confined in low-inductance loops inside the structure and are not critically affected by the parameters of the external circuit. This provides very fast and effective reduction in the collector voltage, provided the parameters of the semiconductor layers and the geometry of the device are selected properly. Particularly significant in this process is the effect of circuital current saturation in the lightly doped collector region of the non-switched part of the transistor. The results of the simulations with the barrier capacitance included in the model are in excellent agreement with the experimental data.

  5. A High Voltage Swing 1.9 GHz PA in Standard CMOS

    NARCIS (Netherlands)

    Aartsen, W.A.J.; Annema, Anne J.; Nauta, Bram

    A circuit technique for RF power amplifiers that reliably handle voltage peaks well above the nominal supply voltage is presented. To achieve this high-voltage tolerance the circuit implements switched-cascode transistors that yield reliable operation for voltages up to 7V at RF frequencies in a

  6. Control method for peak power delivery with limited DC-bus voltage (United States)

    Edwards, John; Xu, Longya; Bhargava, Brij B.


    A method for driving a neutral point-clamped multi-level voltage source inverter supplying a synchronous motor is provided. A DC current is received at a neutral point-clamped multi-level voltage source inverter. The inverter has first, second, and third output nodes. The inverter also has a plurality of switches. A desired speed of a synchronous motor connected to the inverter by the first second and third nodes is received by the inverter. The synchronous motor has a rotor and the speed of the motor is defined by the rotational rate of the rotor. A position of the rotor is sensed, current flowing to the motor out of at least two of the first, second, and third output nodes is sensed, and predetermined switches are automatically activated by the inverter responsive to the sensed rotor position, the sensed current, and the desired speed.

  7. Platform switching and bone platform switching. (United States)

    Carinci, Francesco; Brunelli, Giorgio; Danza, Matteo


    Bone platform switching involves an inward bone ring in the coronal part of the implant that is in continuity with the alveolar bone crest. Bone platform switching is obtained by using a dental fixture with a reverse conical neck. A retrospective study was performed to evaluate the effectiveness of conventional vs reverse conical neck implants. In the period between May 2004 and November 2007, 86 patients (55 females and 31 males; median age, 53 years) were operated and 234 implants were inserted: 40 and 194 were conventional vs reverse conical neck implants, respectively. Kaplan-Meier algorithm and Cox regression were used to detect those variables associated with the clinical outcome. No differences in survival and success rates were detected between conventional vs reverse conical neck implants alone or in combination with any of the studied variables. Although bone platform switching leads to several advantages, no statistical difference in alveolar crest resorption is detected in comparison with reverse conical neck implants. We suppose that the proximity of the implant abutment junction to the alveolar crestal bone gives no protection against the microflora contained in the micrograph. Additional studies on larger series and a combination of platform switching and bone platform switching could lead to improved clinical outcomes.

  8. Power cables with extruded insulation and their accessories for rated voltages from 1 kV (Um = 1,2 kV) up to 30 kV (Um = 36 kV) - Part 1: Cables for rated voltages of 1 kV (Um = 1,2 kV) and 3 kV (Um = 3,6 kV)

    CERN Document Server

    International Electrotechnical Commission. Geneva


    Specifies the construction, dimensions and test requirements of power cables with extruded solid insulation for rated voltages of 1 kV (Um = 1,2 kV) and 3 kV (Um = 3,6 kV) for fixed installations such as distribution networks or industrial installations. This standard includes cables which exhibit properties of reduced flame spread, low levels of smoke emission and halogen-free gas emission when exposed to fire. Cables for special installation and service conditions are not included, for example cables for overhead networks, the mining industry, nuclear power plants (in and around the containment area), submarine use or shipboard application. The main changes with respect to the first edition relate to insulation and oversheath thickness requirements, and inclusion of constructions and requirements for halogen free cables with reduced flame propagation and low levels of smoke emission.

  9. An Active Trap Filter for Switching Harmonics Attenuation of Low-Pulse-Ratio Inverters

    DEFF Research Database (Denmark)

    Bai, Haofeng; Wang, Xiongfei; Loh, Poh Chiang


    , but generally susceptible to filter parameter variations and harmonic resonances. This paper hence presents an alternative Active Trap Filter (ATF), based on a series-LC-filtered inverter, for attenuating switching harmonics in a flexible, while yet not cost burdensome, approach. A direct impedance synthesis......-bandwidth current control loop. Moreover, the use of a series LC-filter at its ac-side helps the ATF to reduce its inverter voltage and power ratings. Compensated frequency range of the ATF can hence be enlarged by using a comparably higher switching frequency and a proper step-by-step design procedure...

  10. Simulation of switching overvoltages in the mine electric power supply system (United States)

    Ivanchenko, D. I.; Novozhilov, N. G.


    Overvoltages occur in mine power supply systems during switching off consumers with high inductive load, such as transformers, reactors and electrical machines. Overvoltages lead to an increase of insulation degradation rate and may cause electric faults, power outage, fire and explosion of methane and coal dust. This paper is dedicated to simulation of vacuum circuit breaker switching overvoltages in a mine power supply system by means of Simulink MATLAB. The model of the vacuum circuit breaker implements simulation of transient recovery voltage, current chopping and an electric arc. Obtained results were compared to available experimental data.

  11. Reduction of Switching Losses in Active Power Filters With a New Generalized Discontinuous-PWM Strategy

    DEFF Research Database (Denmark)

    Blaabjerg, Frede; Asiminoaei, Lucian; Malinowski, M.


    The classical discontinuous pulsewidth modulations (DPWMs) cannot be efficiently applied in active power filters (APFs) because it is difficult to predict the peak values of the inverter current. Consequently, it is difficult to calculate the optimal position of the clamped interval to minimize...... the switching losses in any operating point. This paper proposes a new DPWM strategy for shunt APFs. The proposed modulation strategy detects the current vector position relative to the inverter voltage reference and determines the optimum clamped duration for each phase, in terms of switching power losses......, rated at 3 kVA, 400 V, controlled as an APF....

  12. Highly efficient, versatile, self-Q-switched, high-repetition-rate microchip laser generating Ince–Gaussian modes for optical trapping

    Energy Technology Data Exchange (ETDEWEB)

    Jun Dong; Yu He; Xiao Zhou; Shengchuang Bai [Department of Electronics Engineering, School of Information Science and Engineering, Xiamen, 361005 (China)


    Lasers operating in the Ince-Gaussian (IG) mode have potential applications for optical manipulation of microparticles and formation of optical vortices, as well as for optical trapping and optical tweezers. Versatile, self-Q-switched, high-peak-power, high-repetition-rate Cr, Nd:YAG microchip lasers operating in the IG mode are implemented under tilted, tightly focused laser-diode pumping. An average output power of over 2 W is obtained at an absorbed pump power of 6.4 W. The highest optical-to-optical efficiency of 33.2% is achieved at an absorbed pump power of 3.9 W. Laser pulses with a pulse energy of 7.5 μJ, pulse width of 3.5 ns and peak power of over 2 kW are obtained. A repetition rate up to 335 kHz is reached at an absorbed pump power of 5.8 W. Highly efficient, versatile, IG-mode lasers with a high repetition rate and a high peak power ensure a better flexibility in particle manipulation and optical trapping. (control of laser radiation parameters)

  13. A Transformerless Hybrid Active Filter Capable of Complying with Harmonic Guidelines for Medium-Voltage Motor Drives (United States)

    Kondo, Ryota; Akagi, Hirofumi

    This paper presents a transformerless hybrid active filter that is integrated into medium-voltage adjustable-speed motor drives for fans, pumps, and compressors without regenerative braking. The authors have designed and constructed a three-phase experimental system rated at 400V and 15kW, which is a downscaled model from a feasible 6.6-kV 1-MW motor drive system. This system consists of the hybrid filter connecting a passive filter tuned to the 7th harmonic filter in series with an active filter that is based on a three-level diode-clamped PWM converter, as well as an adjustable-speed motor drive in which a diode rectifier is used as the front end. The hybrid filter is installed on the ac side of the diode rectifier with no line-frequency transformer. The downscaled system has been exclusively tested so as to confirm the overall compensating performance of the hybrid filter and the filtering performance of a switching-ripple filter for mitigating switching-ripple voltages produced by the active filter. Experimental results verify that the hybrid filter achieves harmonic compensation of the source current in all the operating regions from no-load to the rated-load conditions, and that the switching-ripple filter reduces the switching-ripple voltages as expected.

  14. A Simplified Voltage Vector Selection Strategy for Direct Torque Control

    Directory of Open Access Journals (Sweden)

    Ma Jian


    Full Text Available The direct torque control (DTC for permanent magnet synchronous motor (PMSM under the control of switching table suffers from high torque ripple and variable switching frequency. For PMSM DTC system, voltage vector selection strategy as the hysteresis control principle determines the systems performance. The angle (a between stator flux vector and the applying voltage vector determines effect of the voltage vector on the amplitude of stator flux and torque angle. The effect of the voltage vector on toque is dependent on a, torque angle and parameters of PMSM. A voltage vector selection strategy based on the technology of space vector modulation (SVM is proposed to control stator flux, torque angle and torque. Experimental results for a 15-kW interior PMSM show it can decrease stator current and torque ripples and fix the switching frequency.

  15. Study on torque algorithm of switched reluctance motor


    Li, Xiaoguang; Sun, Huiqin; Xue, Zhihong; Li, Kenan; Tianzi XUE


    To solve the torque ripple problem of switched reluctance motor under the traditional control method, a direct torque control method for switched reluctance motor is proposed. Direct torque algorithm controls flux magnitude and direction by querying appropriate voltage vector in switch list. Taking torque as direct control variable can reduce the torque ripple of the motor, which broadens the application fields of switched reluctance motor. Starting with the theory of direct torque algorithm,...

  16. Switching Characteristics of Ferroelectric Transistor Inverters (United States)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.


    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.


    KAUST Repository

    Abdul Rahim, Farhan


    MEMS based mechanical switches are seen to be the likely replacements for CMOS based switches due to the several advantages that these mechanical switches have over CMOS switches. Mechanical switches can be used in systems under extreme conditions and also provide more reliability and cause less power loss. A major problem with mechanical switches is bouncing. Bouncing is an undesirable characteristic which increases the switching time and causes damage to the switch structure affecting the overall switch life. This thesis proposes a new switch design that may be used to mitigate bouncing by using two voltage sources using a double electrode configuration. The effect of many switch’s tunable parameters is also discussed and an effective tuning technique is also provided. The results are compared to the current control schemes in literature and show that the double electrode scheme is a viable control option.

  18. Protection of Low Voltage CIGRE distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Bak, Claus Leth


    the inverters used for Photovoltaic (PV) and battery applications. The disconnection of the PV solar panels when in island mode is made by proposing switch dis-connecting devices. ABB is currently using these kinds of disconnection devices for the purpose of protecting solar panels against over voltages...

  19. Flexible Membrane Micro Flow-rate Threshold Flow Sensor

    Directory of Open Access Journals (Sweden)

    Hee C. LIM


    Full Text Available A piezoresistive flow sensor that functions as a threshold flow switch, independent of input supply voltage, is designed, fabricated, and tested. The test flow rate is in the 10s ml/hr range. The sensor is fabricated using doped hydrogenated amorphous silicon thin film with MEMs on flexible polyimide substrate. The flow sensor is highly sensitive and able to distinguish between distilled water and 0.1 % NaCl saline solution in terms of threshold switch-on flow rate. The switch-on threshold of the flow sensor is observed to be independent of the applied input voltage. These turn-on threshold levels are adaptable to user’s application.

  20. The β4subunit of the voltage-gated calcium channel (Cacnb4) regulates the rate of cell proliferation in Chinese Hamster Ovary cells. (United States)

    Rima, Mohamad; Daghsni, Marwa; De Waard, Stephan; Gaborit, Nathalie; Fajloun, Ziad; Ronjat, Michel; Mori, Yasuo; Brusés, Juan L; De Waard, Michel


    The β subunits of Voltage-Gated Calcium Channel (VGCC) are cytosolic proteins that interact with the VGCC pore -forming subunit and participate in the trafficking of the channel to the cell membrane and in ion influx regulation. β subunits also exert functions independently of their binding to VGCC by translocation to the cell nucleus including the control of gene expression. Mutations of the neuronal Cacnb4 (β 4 ) subunit are linked to human neuropsychiatric disorders including epilepsy and intellectual disabilities. It is believed that the pathogenic phenotype induced by these mutations is associated with channel-independent functions of the β 4 subunit. In this report, we investigated the role of β 4 subunit in cell proliferation and cell cycle progression and examined whether these functions could be altered by a pathogenic mutation. To this end, stably transfected Chinese Hamster Ovary (CHO-K1) cells expressing either rat full-length β 4 or the rat C-terminally truncated epileptic mutant variant β 1-481 were generated. The subcellular localization of both proteins differed significantly. Full-length β 4 localizes almost exclusively in the cell nucleus and concentrates into the nucleolar compartment, while the C-terminal-truncated β 1-481 subunit was less concentrated within the nucleus and absent from the nucleoli. Cell proliferation was found to be reduced by the expression of β 4 , while it was unaffected by the epileptic mutant. Also, full-length β 4 interfered with cell cycle progression by presumably preventing cells from entering the S-phase via a mechanism that partially involves endogenous B56δ, a regulatory subunit of the phosphatase 2A (PP2A) that binds β 4 but not β 1-481 . Analysis of β 4 subcellular distribution during the cell cycle revealed that the protein is highly expressed in the nucleus at the G1/S transition phase and that it is translocated out of the nucleus during chromatin condensation and cell division. These results

  1. Utilizing zero-sequence switchings for reversible converters (United States)

    Hsu, John S.; Su, Gui-Jia; Adams, Donald J.; Nagashima, James M.; Stancu, Constantin; Carlson, Douglas S.; Smith, Gregory S.


    A method for providing additional dc inputs or outputs (49, 59) from a dc-to-ac inverter (10) for controlling motor loads (60) comprises deriving zero-sequence components (,, and from the inverter (10) through additional circuit branches with power switching devices (23, 44, 46), transforming the voltage between a high voltage and a low voltage using a transformer or motor (42, 50), converting the low voltage between ac and dc using a rectifier (41, 51) or an H-bridge (61), and providing at least one low voltage dc input or output (49, 59). The transformation of the ac voltage may be either single phase or three phase. Where less than a 100% duty cycle is acceptable, a two-phase modulation of the switching signals controlling the inverter (10) reduces switching losses in the inverter (10). A plurality of circuits for carrying out the invention are also disclosed.

  2. Study of switching transients in high frequency converters (United States)

    Zinger, Donald S.; Elbuluk, Malik E.; Lee, Tony


    As the semiconductor technologies progress rapidly, the power densities and switching frequencies of many power devices are improved. With the existing technology, high frequency power systems become possible. Use of such a system is advantageous in many aspects. A high frequency ac source is used as the direct input to an ac/ac pulse-density-modulation (PDM) converter. This converter is a new concept which employs zero voltage switching techniques. However, the development of this converter is still in its infancy stage. There are problems associated with this converter such as a high on-voltage drop, switching transients, and zero-crossing detecting. Considering these problems, the switching speed and power handling capabilities of the MOS-Controlled Thyristor (MCT) makes the device the most promising candidate for this application. A complete insight of component considerations for building an ac/ac PDM converter for a high frequency power system is addressed. A power device review is first presented. The ac/ac PDM converter requires switches that can conduct bi-directional current and block bi-directional voltage. These bi-directional switches can be constructed using existing power devices. Different bi-directional switches for the converter are investigated. Detailed experimental studies of the characteristics of the MCT under hard switching and zero-voltage switching are also presented. One disadvantage of an ac/ac converter is that turn-on and turn-off of the switches has to be completed instantaneously when the ac source is at zero voltage. Otherwise shoot-through current or voltage spikes can occur which can be hazardous to the devices. In order for the devices to switch softly in the safe operating area even under non-ideal cases, a unique snubber circuit is used in each bi-directional switch. Detailed theory and experimental results for circuits using these snubbers are presented. A current regulated ac/ac PDM converter built using MCT's and IGBT's is

  3. Vibration Control via Stiffness Switching of Magnetostrictive Transducers (United States)

    Scheidler, Justin J.; Asnani, Vivake M.; Dapino, Marcelo J.


    This paper presents a computational study of structural vibration control that is realized by switching a magnetostrictive transducer between high and low stiffness states. Switching is accomplished by either changing the applied magnetic field with a voltage excitation or changing the shunt impedance on the transducer's coil (i.e., the magnetostrictive material's magnetic boundary condition). Switched-stiffness vibration control is simulated using a lumped mass supported by a damper and the magnetostrictive transducer (mount), which is represented by a nonlinear, electromechanical model. Free vibration of the mass is calculated while varying the mount's stiffness according to a reference switched-stiffness vibration control law. The results reveal that switching the magnetic field produces the desired change in stiffness, but also an undesired actuation force that can significantly degrade the vibration control. Hence, a modified switched-stiffness control law that accounts for the actuation force is proposed and implemented for voltage-controlled stiffness switching. The influence of the magnetomechanical bias condition is also discussed. Voltage-controlled stiffness switching is found to introduce damping equivalent to a viscous damping factor up to about 0.25; this is shown to primarily result from active vibration reduction caused by the actuation force. The merit of magnetostrictive switched-stiffness vibration control is then quantified by comparing the results of voltage- and shunt-controlled stiffness switching to the performance of optimal magnetostrictive shunt damping.

  4. A High-Efficiency Voltage Equalization Scheme for Supercapacitor Energy Storage System in Renewable Generation Applications

    Directory of Open Access Journals (Sweden)

    Liran Li


    Full Text Available Due to its fast charge and discharge rate, a supercapacitor-based energy storage system is especially suitable for power smoothing in renewable energy generation applications. Voltage equalization is essential for series-connected supercapacitors in an energy storage system, because it supports the system’s sustainability and maximizes the available cell energy. In this paper, we present a high-efficiency voltage equalization scheme for supercapacitor energy storage systems in renewable generation applications. We propose an improved isolated converter topology that uses a multi-winding transformer. An improved push-pull forward circuit is applied on the primary side of the transformer. A coupling inductor is added on the primary side to allow the switches to operate under the zero-voltage switching (ZVS condition, which reduces switching losses. The diodes in the rectifier are replaced with metal-oxide-semiconductor field-effect transistors (MOSFETs to reduce the power dissipation of the secondary side. In order to simplify the control, we designed a controllable rectifying circuit to achieve synchronous rectifying on the secondary side of the transformer. The experimental results verified the effectiveness of the proposed design.

  5. An interleaved five-level boost converter with voltage-balance control

    DEFF Research Database (Denmark)

    Chen, Jianfei; Hou, Shiying; Deng, Fujin


    This paper proposes an interleaved five-level boost converter based on switched-capacitor network. Operating principle of the converter under CCM mode is analyzed. High voltage gain, low component stress, small input current ripple, and self-balance function for capacitor voltages in the switched...... converter and control strategy....

  6. Diamond switches for high temperature electronics

    Energy Technology Data Exchange (ETDEWEB)

    Prasad, R.R.; Rondeau, G.; Qi, Niansheng [Alameda Applied Sciences Corp., San Leandro, CA (United States)] [and others


    Diamond switches are well suited for use in high temperature electronics. Laboratory feasibility of diamond switching at 1 kV and 18 A was demonstrated. DC blocking voltages up to 1 kV were demonstrated. A 50 {Omega} load line was switched using a diamond switch, with switch on-state resistivity {approx}7 {Omega}-cm. An electron beam, {approx}150 keV energy, {approx}2 {mu}s full width at half maximum was used to control the 5 mm x 5 mm x 100 {mu}m thick diamond switch. The conduction current temporal history mimics that of the electron beam. These data were taken at room temperature.

  7. Radio frequency-assisted fast superconducting switch

    Energy Technology Data Exchange (ETDEWEB)

    Solovyov, Vyacheslav; Li, Qiang


    A radio frequency-assisted fast superconducting switch is described. A superconductor is closely coupled to a radio frequency (RF) coil. To turn the switch "off," i.e., to induce a transition to the normal, resistive state in the superconductor, a voltage burst is applied to the RF coil. This voltage burst is sufficient to induce a current in the coupled superconductor. The combination of the induced current with any other direct current flowing through the superconductor is sufficient to exceed the critical current of the superconductor at the operating temperature, inducing a transition to the normal, resistive state. A by-pass MOSFET may be configured in parallel with the superconductor to act as a current shunt, allowing the voltage across the superconductor to drop below a certain value, at which time the superconductor undergoes a transition to the superconducting state and the switch is reset.

  8. Ultrawide band switching: gas and oil breakdown research (United States)

    Agee, Forrest J.; Lehr, Jane M.; Prather, William D.; Scholfield, David W.


    The generation of Ultra-Wide Band Pulses nanoseconds is a challenging problem that involves generating pulses with 100 pico-second rise times and voltage of 500 kV with pulse widths of the order of less than one to a few nanoseconds. A critical step involves switching high voltages with precision. The use of both gas and oil for the switching insulating medium have been accomplished with varying results. The Phillips Laboratory is pursuing both media in the gas switched Hindenburg series of pulsers and in the study of oil switches that promise good performance in compact packages. This paper reports on progress in gas switching associated with the new H-5 pulser and with the use of earlier Hindenburg pulsers to investigate the UWB properties of oil switches. We compare the design strategies and techniques of oil and gas switching in the context of pulsers of interest.

  9. Simplified Three-Phase 18-Step Voltage-Source Inverter by Injecting Harmonics (United States)

    Masukawa, Shigeo

    A new method for reducing harmonics in the output voltage of a three-phase voltage source inverter is proposed. This method is applied to a conventional six-step inverter with a three-phase output transformer. In the proposed inverter, two capacitors are used as dc source; further, four auxiliary switching devices and a single-phase transformer are included in the inverter, and harmonics are injected to the neutral point of the three-phase transformer. As a result, the output voltage of the proposed inverter becomes almost equal to that of a conventional 18-step inverter, which has 18 switching devices and three three-phase output transformers. In this paper, the circuit performances and output voltage waveforms are discussed, and the optimum parameters are determined by taking into account the effect of harmonics reduction. Then, the characteristics of an inverter system connected to a grid are experimentally investigated. Furthermore, the ratings of several components are clarified by the theoretical results.

  10. On The Snubber Influence To The Switching And Conduction Losses In A Converter Using Switched Capacitor

    Directory of Open Access Journals (Sweden)

    Viorel DUGAN


    Full Text Available The paper deals to design and to compute the snubber parameters influence on the switching and conduction losses of the transistors (IGBT used as bidirectional switches in a converter with switched capacitor. The converter was modelled with difference equations, and the transistors during turn-on and turn-off processes were simulated by dynamically varying resistance models. The energy loss per switching, commutation time, the variation of the transistor voltage etc. and the influence of snubber parameters in each of these cases are shown in the context of a converter used as a 50Hz reactive power controller unit

  11. Modeling and Manufacturing of Micromechanical RF Switch with Inductors

    Directory of Open Access Journals (Sweden)

    Ying-Liang Chen


    Full Text Available This study presents the simulation, fabrication and characterization ofmicromechanical radio frequency (RF switch with micro inductors. The inductors areemployed to enhance the characteristic of the RF switch. An equivalent circuit model isdeveloped to simulate the performance of the RF switch. The behaviors of themicromechanical RF switch are simulated by the finite element method software,CoventorWare. The micromechanical RF switch is fabricated using the complementarymetal oxide semiconductor (CMOS and a post-process. The post-process employs a wetetching to etch the sacrificial layer, and to release the suspended structures of the RF switch.The structure of the RF switch contains a coplanar waveguide (CPW, a suspendedmembrane, eight springs and two inductors in series. Experimental results reveal that theinsertion loss and isolation of the switch are 1.7 dB at 21 GHz and 19 dB at 21 GHz,respectively. The driving voltage of the switch is about 13 V.

  12. Picosecond Joule heating in photoconductive switch electrodes


    Vermeersch, Bjorn; Pernot, Gilles; Lu, Hong; Bahk, Je-Hyeong; Gossard, Arthur C.; Shakouri, Ali


    International audience; We present experimental observations of picosecond Joule heating inside the gold metallization of ErAs:GaAs photoconductive switches. Femtosecond laser time-domain thermoreflectance is employed to resolve the fast thermal dynamics in the central switch electrode during generation and transmission of rf electrical pulses. Sharp features in the thermoreflectance signal scaling quadratically with the bias/pulse voltage reveal Joule heating with durations 5 ps inside the g...

  13. Wide Bandgap Extrinsic Photoconductive Switches

    Energy Technology Data Exchange (ETDEWEB)

    Sullivan, James S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)


    Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

  14. Reduction of Coronary Motion Artifacts in Prospectively Electrocardiography-Gated Coronary Computed Tomography Angiography Using Monochromatic Imaging at Various Energy Levels in Combination With a Motion Correction Algorithm on Single-Source Fast Tube Voltage Switching Dual-Energy Computed Tomography: A Phantom Experiment. (United States)

    Machida, Haruhiko; Fukui, Rika; Gao, Jianbo; Tanaka, Isao; Shen, Yun; Suzuki, Shigeru; Ishikawa, Takuya; Ueno, Eiko


    The aim of this study was to assess the effect of monochromatic imaging at various energy levels in combination with a motion correction algorithm (MCA) in single-source dual-energy coronary computed tomography angiography (CCTA) with fast switching of tube voltage on the reduction of coronary motion artifacts (CMA) in a phantom setting. Using this dual-energy computed tomography technique with a phantom comprising models of coronary vessels filled with contrast medium and pulsating at constant heart rates of 60 to 100 beats per minute, we reconstructed monochromatic images of CCTA obtained at 50 to 90 keV with and without use of MCA. Cardiac motion was modeled by simulating the in vivo time-volume curve of the left ventricle. Two independent readers graded CMA in 9 coronary segments using a 5-point scale (1, poor; 3 to 5, interpretable; 5, excellent). At each heart rate, we compared the average score of CMA between images obtained at 50 to 90 keV with and without use of MCA using Wilcoxon signed rank test, and we compared the score among images obtained at 50 to 90 keV with use of MCA using Kruskal-Wallis and post hoc tests. We also compared the percentages of image interpretability and improvement in image interpretability among images obtained at 50 to 90 keV with use of MCA. With the use of MCA, the average score of CMA was significantly higher for images obtained at each energy level from 50 to 70 keV (P < 0.05) and was comparable at 80 and 90 keV, and it was comparable among those obtained at 50 to 70 keV. With its use, the percentages of image interpretability were similarly high at 50 to 70 keV at 60 to 80 beats per minute (78%-100%), and they were higher at 50 to 60 keV (72%-83%) than at 70 keV at 90 to 100 beats per minute (50%-56%). The percentages of improved image interpretability with MCA were similarly high at 50 to 70 keV at 60 to 80 beats per minute (56%-100%), and they were higher at 50 to 60 keV (62%-77%) than at 70 keV at 90 to 100 beats per

  15. Computing rates of Markov models of voltage-gated ion channels by inverting partial differential equations governing the probability density functions of the conducting and non-conducting states. (United States)

    Tveito, Aslak; Lines, Glenn T; Edwards, Andrew G; McCulloch, Andrew


    Markov models are ubiquitously used to represent the function of single ion channels. However, solving the inverse problem to construct a Markov model of single channel dynamics from bilayer or patch-clamp recordings remains challenging, particularly for channels involving complex gating processes. Methods for solving the inverse problem are generally based on data from voltage clamp measurements. Here, we describe an alternative approach to this problem based on measurements of voltage traces. The voltage traces define probability density functions of the functional states of an ion channel. These probability density functions can also be computed by solving a deterministic system of partial differential equations. The inversion is based on tuning the rates of the Markov models used in the deterministic system of partial differential equations such that the solution mimics the properties of the probability density function gathered from (pseudo) experimental data as well as possible. The optimization is done by defining a cost function to measure the difference between the deterministic solution and the solution based on experimental data. By evoking the properties of this function, it is possible to infer whether the rates of the Markov model are identifiable by our method. We present applications to Markov model well-known from the literature. Copyright © 2016 The Authors. Published by Elsevier Inc. All rights reserved.

  16. Combined short and long term rating of static Var system components for steady state and transient voltage support in a 500 kV power grid

    Energy Technology Data Exchange (ETDEWEB)

    Paulsson, L.; Silva, A.; Thorvaldsson, B. [ABB Power Systems AB, Vaesteraas (Sweden); Gonzalez, R. [Northern States Power Co., Minneapolis, MN (United States)


    One efficient way to improve the power transmission performance is to provide appropriate reactive power balance and control in the network. Reactive power compensation by means of static var compensation (SVC) and series compensation (SC) are well established ways to achieve such improvement. The SVC, which is a relatively new concept, has now been used successfully for more than 15 years in EHV systems. This paper discusses a more general type of shunt compensation, designated Static var System (SVS), which may include breaker switched capacitor banks and other special features besides conventional SVC technology. (author) 4 figs.

  17. Random telegraphic voltage noise due to thermal bi-stability in a superconducting weak link (United States)

    Biswas, Sourav; Kumar, Nikhil; Winkelmann, C. B.; Courtois, Herve; Gupta, Anjan K.


    We investigated the random telegraphic voltage noise signal in the hysteretic bi-stable state of a superconducting weak link device. Fluctuation induced random switching between zero voltage state and non-zero-voltage state gives rise to a random telegraphic voltage signal in time domain. This telegraphic noise is used to find the mean lifetime of each of the two states. The mean life time in the zero voltage state is found to decrease with increasing bias current while that of resistive state increases and thus the two cross at certain bias current. We qualitatively discuss this observed switching behavior as arising from the bi-stable nature.

  18. Ab initio theory for current-induced molecular switching: Melamine on Cu(001)

    KAUST Repository

    Ohto, Tatsuhiko


    Melamine on Cu(001) is mechanically unstable under the current of a scanning tunneling microscope tip and can switch among configurations. However, these are not equally accessible, and the switching critical current depends on the bias polarity. In order to explain such rich phenomenology, we have developed a scheme to evaluate the evolution of the reaction paths and activation barriers as a function of bias, which is rooted in the nonequilibrium Green\\'s function method implemented within density functional theory. This, combined with the calculation of the inelastic electron tunneling spectroscopy signal, allows us to identify the vibrational modes promoting the observed molecular conformational changes. Finally, once our ab initio results are used within a resonance model, we are able to explain the details of the switching behavior, such as its dependence on the bias polarity, and the noninteger power relation between the reaction rate constants and both the bias voltage and the electric current. © 2013 American Physical Society.

  19. Multi-Kilovolt Solid-State Picosecond Switch Studies (United States)


    structures, including PIN diode, bipolar transistor , and thyristor [2]. It is well established that picosecond delayed breakdown switching only occurs...state picosecond switching is being developed for application to electromagnetic impulse sources. Low jitter and fast risetime are required to...biased semiconductor junction is pulse charged so fast that the voltage across the junction exceeds the static breakdown voltage. The high field rise

  20. Design of a switched reluctance generator

    Energy Technology Data Exchange (ETDEWEB)

    Heese, T.; Pyrhoenen, J.


    This report presents the design of a low voltage switched reluctance generator for variable speed applications showing the design of its construction and commutation unit. For the realisation of the control system the control strategy is presented. The principle and the theory of switched reluctance generators are described in this context. Also an overview of existing generator technology for these applications is given. The results gained suggest that switched reluctance machines can also advantageously be used as generators if the generating operation is considered within the design process. Compared with the existing technology a higher output power and efficiency is reached over the whole speed range. (orig.)

  1. Comparative Studies of Different Switching Patterns for Direct and Indirect Space Vector Modulated Matrix Converter

    Directory of Open Access Journals (Sweden)

    Amin Shabanpour


    Full Text Available This paper presents a MATLAB/Simulink simulation of direct and indirect space vector modulation for matrix converter. Different switching patterns for both direct and indirect methods are simulated and compared. Three criteria are chosen to compare the performance of switching patterns: (1 total harmonic distortion (THD; (2 harmonic spectrum analysis of output voltages; and (3 number of switching in each switching period. Switching strategies are completely implemented using the power library in MATLAB/Simulink environment.

  2. A nanoscale piezoelectric transformer for low-voltage transistors. (United States)

    Agarwal, Sapan; Yablonovitch, Eli


    A novel piezoelectric voltage transformer for low-voltage transistors is proposed. Placing a piezoelectric transformer on the gate of a field-effect transistor results in the piezoelectric transformer field-effect transistor that can switch at significantly lower voltages than a conventional transistor. The piezoelectric transformer operates by using one piezoelectric to squeeze another piezoelectric to generate a higher output voltage than the input voltage. Multiple piezoelectrics can be used to squeeze a single piezoelectric layer to generate an even higher voltage amplification. Coupled electrical and mechanical modeling in COMSOL predicts a 12.5× voltage amplification for a six-layer piezoelectric transformer. This would lead to more than a 150× reduction in the power needed for communications.

  3. Vibration Control via Stiffness Switching of Magnetostrictive Transducers (United States)

    Scheidler, Justin J.; Asnani, Vivake M.; Dapino, Marcelo J.


    In this paper, a computational study is presented of structural vibration control that is realized by switching a magnetostrictive transducer between high and low stiffness states. Switching is accomplished by either changing the applied magnetic field with a voltage excitation or changing the shunt impedance on the transducer's coil (i.e., the magnetostrictive material's magnetic boundary condition). Switched-stiffness vibration control is simulated using a lumped mass supported by a damper and the magnetostrictive transducer (mount), which is represented by a nonlinear, electromechanical model. Free vibration of the mass is calculated while varying the mount's stiffness according to a reference switched-stiffness vibration control law. The results reveal that switching the magnetic field produces the desired change in stiffness, but also an undesired actuation force that can significantly degrade the vibration control. Hence, a modified switched-stiffness control law that accounts for the actuation force is proposed and implemented for voltage-controlled stiffness switching. The influence of the magneto-mechanical bias condition is also discussed. Voltage-controlled stiffness switching is found to introduce damping equivalent to a viscous damping factor up to about 0.13; this is shown to primarily result from active vibration reduction caused by the actuation force. The merit of magnetostrictive switched-stiffness vibration control is then quantified by comparing the results of voltage- and shunt-controlled stiffness switching to the performance of optimal magnetostrictive shunt damping. For the cases considered, optimal resistive shunt damping performed considerably better than both voltage- and shunt-controlled stiffness switching.

  4. Simulation of mixed switched-capacitor/digital networks with signal-driven switches (United States)

    Suyama, Ken; Tsividis, Yannis P.; Fang, San-Chin


    The simulation of mixed switched-capacitor/digital (SC/D) networks containing capacitors, independent and linear-dependent voltage sources, switches controlled either by periodic or nonperiodic Boolean signals, latched comparators, and logic gates is considered. A unified linear switched-capacitor network (SCN) and mixed SC/D network simulator, SWITCAP2, and its applications to several widely used and novel nonlinear SCNs are discussed. The switches may be controlled by periodic waveforms and by nonperiodic waveforms from the outputs of comparators and logic gates. The signal-dependent modification of network topology through the comparators, logic gates, and signal-driven switches makes the modeling of various nonlinear switched-capacitor circuits possible. Simulation results for a pulse-code modulation (PCM) voice encoder, a sigma-delta modulator, a neural network, and a phase-locked loop (PLL) are presented to demonstrate the flexibility of the approach.

  5. DVR(Dynamic Voltage Restorer)

    Indian Academy of Sciences (India)

    First page Back Continue Last page Graphics. DVR(Dynamic Voltage Restorer). Supply voltage Sag compensation. Supply voltage Swell Compensation. Balancing the Load voltage. Compensation of Supply Voltage Harmonics.

  6. High-Sequence Diversity and Rapid Virus Turnover Contribute to Higher Rates of Coreceptor Switching in Treatment-Experienced Subjects with HIV-1 Viremia. (United States)

    Nedellec, Rebecca; Herbeck, Joshua T; Hunt, Peter W; Deeks, Steven G; Mullins, James I; Anton, Elizabeth D; Reeves, Jacqueline D; Mosier, Donald E


    Coreceptor switching from CCR5 to CXCR4 is common during chronic HIV-1 infection, but is even more common in individuals who have failed antiretroviral therapy (ART). Prior studies have suggested rapid mutation and/or recombination of HIV-1 envelope (env) genes during coreceptor switching. We compared the functional and genotypic changes in env of viruses from viremic subjects who had failed ART just before and after coreceptor switching and compared those to viruses from matched subjects without coreceptor switching. Analysis of multiple unique functional env clones from each subject revealed extensive diversity at both sample time points and rapid diversification of sequences during the 4-month interval in viruses from both 9 subjects with coreceptor switching and 15 control subjects. Only two subjects had envs with evidence of recombination. Three findings distinguished env clones from subjects with coreceptor switching from controls: (1) lower entry efficiency via CCR5; (2) longer V1/V2 regions; and (3), lower nadir CD4 T cell counts during prior years of infection. Most of these subjects harbored virus with lower replicative capacity associated with protease (PR) and/or reverse transcriptase inhibitor resistance mutations, and the extensive diversification tended to lead either to improved entry efficiency via CCR5 or the gain of entry function via CXCR4. These results suggest that R5X4 or X4 variants emerge from a diverse, low-fitness landscape shaped by chronic infection, multiple ART resistance mutations, the availability of target cells, and reduced entry efficiency via CCR5.

  7. Affect of Voltage Sags on Electro-magnetic Contactor (United States)

    Iyoda, Isao; Ando, Yoshitaro; Pounyakhet, Sompathana; Hirata, Masaya; Ise, Toshifumi

    Sensitivity of electro-magnetic contactors for voltage sags is studied by experiments and simulations. An experimental circuit with a semiconductor fault switch that controls the phase angle of system voltage at the initial point of voltage sags is developed. The phase angle is a new parameter for voltage sags. The operating characteristics of the contactor are evaluated in various conditions. It is found that shallow sags may cause faster trips of contactors compared to deep sags in some cases. The reason of this phenomenon is analyzed with simulations.

  8. Ultra-compact Marx-type high-voltage generator (United States)

    Goerz, David A.; Wilson, Michael J.


    An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

  9. Isolated and soft-switched power converter (United States)

    Peng, Fang Zheng; Adams, Donald Joe


    An isolated and soft-switched power converter is used for DC/DC and DC/DC/AC power conversion. The power converter includes two resonant tank circuits coupled back-to-back through an isolation transformer. Each resonant tank circuit includes a pair of resonant capacitors connected in series as a resonant leg, a pair of tank capacitors connected in series as a tank leg, and a pair of switching devices with anti-parallel clamping diodes coupled in series as resonant switches and clamping devices for the resonant leg. The power converter is well suited for DC/DC and DC/DC/AC power conversion applications in which high-voltage isolation, DC to DC voltage boost, bidirectional power flow, and a minimal number of conventional switching components are important design objectives. For example, the power converter is especially well suited to electric vehicle applications and load-side electric generation and storage systems, and other applications in which these objectives are important. The power converter may be used for many different applications, including electric vehicles, hybrid combustion/electric vehicles, fuel-cell powered vehicles with low-voltage starting, remote power sources utilizing low-voltage DC power sources, such as photovoltaics and others, electric power backup systems, and load-side electric storage and generation systems.

  10. Microprocessor Controlled Capacitor Bank Switching System for ...

    African Journals Online (AJOL)

    In this work, analysis and development of a microprocessor controlled capacitor bank switching system for deployment in a smart distribution network was carried out. This system was implemented by the use of discreet components such as resistors, capacitors, transistor, diode, automatic voltage regulator, with the ...

  11. An extended dual input dual output three level Z source inverter with improved switch loss reduction technique

    Directory of Open Access Journals (Sweden)

    N.B. Deshmukh


    Full Text Available Multilevel inverter (MLI is a proven technology used for industrial applications due to low output total harmonic distortion (THD, high power handling capability and low active device rating. Dual output inverter is a recent trend associated with inverter topologies for specialized applications. This paper deals with three phase three level dual input dual output inverter topology with minimum active device count. Reduction in switch count leads to reduction in losses and improves reliability. Both the input sources share power equally as neutral point current ripple is maintained low. For further reduction in switching losses at higher switching frequencies, the concept of “no switching zone” or discontinuous pulse width modulation (DPWM has been put forth recently. This paper proposes modification in the placement of “no switching zone” in order to optimize switching losses and output THD (output filtering requirements for low power factor load. This study also proposes novel graphical approach to analyze the loss reduction along with its effect on output THD. The sinusoidal PWM (SPWM is used which gives satisfactory switching loss reduction without complex calculations. Moreover, the proposed topology is generalized to provide dual output at higher voltage levels. It is seen that the components reduction phenomenon becomes more pronounced as number of levels goes on increasing. The proposed converter is simulated in MATLAB software environment and results are obtained.

  12. Design of RF MEMS switches without pull-in instability (United States)

    Proctor, W. Cyrus; Richards, Gregory P.; Shen, Chongyi; Skorczewski, Tyler; Wang, Min; Zhang, Jingyan; Zhong, Peng; Massad, Jordan E.; Smith, Ralph


    Micro-electro-mechanical systems (MEMS) switches for radio-frequency (RF) signals have certain advantages over solid-state switches, such as lower insertion loss, higher isolation, and lower static power dissipation. Mechanical dynamics can be a determining factor for the reliability of RF MEMS. The RF MEMS ohmic switch discussed in this paper consists of a plate suspended over an actuation pad by four double-cantilever springs. Closing the switch with a simple step actuation voltage typically causes the plate to rebound from its electrical contacts. The rebound interrupts the signal continuity and degrades the performance, reliability and durability of the switch. The switching dynamics are complicated by a nonlinear, electrostatic pull-in instability that causes high accelerations. Slow actuation and tailored voltage control signals can mitigate switch bouncing and effects of the pull-in instability; however, slow switching speed and overly-complex input signals can significantly penalize overall system-level performance. Examination of a balanced and optimized alternative switching solution is sought. A step toward one solution is to consider a pull-in-free switch design. In this paper, determine how simple RC-circuit drive signals and particular structural properties influence the mechanical dynamics of an RF MEMS switch designed without a pull-in instability. The approach is to develop a validated modeling capability and subsequently study switch behavior for variable drive signals and switch design parameters. In support of project development, specifiable design parameters and constraints will be provided. Moreover, transient data of RF MEMS switches from laser Doppler velocimetry will be provided for model validation tasks. Analysis showed that a RF MEMS switch could feasibly be designed with a single pulse waveform and no pull-in instability and achieve comparable results to previous waveform designs. The switch design could reliably close in a timely

  13. Study of Water Purification with Pulsed Power Supply using MOSFET Switches (United States)

    Shimizu, Kazuo; Blajan, Marius; Muramatsu, Shuichi

    A Marx generator using MOSFET switches was built and studied in this paper for water purification. In order to replace the spark gap type of pulse power sources, with miss fire problems and short mechanical lifetime. In case of Marx Generator which generates negative pulses, a maximum output voltage of 3.6 kV, rise time of 40 ns and pulse width of 600 ns, was obtained. Discharge energy of one pulse was about 801 μJ for negative polarity at -2.4 kV. In case of positive pulses, a maximum output voltage of 3.6 kV, rise time of 75 ns and pulse width of 750 ns, was obtained. Discharge energy of one pulse was about 1120 μJ at 2.4 kV. The discharge was generated in bubbling water using a Marx Generator with MOSFET switches. The discoloration of indigo carmine solution was carried out to investigate the feasibility of low voltage discharge in bubbling water. As a result, indigo carmine solution was decolorized, although the discharge voltage was about -2.4 kV. The treatment performance was improved when oxygen was fed in the solution. The discoloration rate was 100 % after treatment time of 15 min with oxygen used as carrier gas. Emission of OH was confirmed and considered to play a role for water purification.

  14. 160-Gb/s Silicon All-Optical Packet Switch for Buffer-less Optical Burst Switching

    DEFF Research Database (Denmark)

    Hu, Hao; Ji, Hua; Pu, Minhao


    We experimentally demonstrate a 160-Gb/s Ethernet packet switch using an 8.6-mm-long silicon nanowire for optical burst switching, based on cross phase modulation in silicon. One of the four packets at the bit rate of 160 Gb/s is switched by an optical control signal using a silicon based 1 × 1 all......-optical packet switch. Error free performance (BER switched packet. The use of optical burst switching protocols could eliminate the need for optical buffering in silicon packet switch based optical burst switching, which might be desirable for high-speed interconnects within a short...

  15. Plasma opening switch with extrinsic magnetic field

    CERN Document Server

    Dolgachev, G; Maslennikov, D


    Summary form only given, as follows. We have demonstrated in series of experiments that plasma opening switch (POS) switching voltage (UPOS) is defined by energy density (w) deposited in the POS plasma. If we then consider a plasma erosion mainly responsible for the effect of POS switching (the erosion effect could be described by Hall or Child-Langmuir models) the energy density (w) could be measured as a function of a system "macro-parameter" such as the initial charging voltage of the capacity storage system (the Marx pulsed voltage generator) UMarx. The POS voltage in this case could be given by UPOS"aw=aUMarx4/7, where a is a constant. This report demonstrates that for the high-impedance POS which has limited charge density transferred through the POS plasma a"2.5 (MV3/7) with no external magnetic field applied. The use of the extrinsic magnetic field allows to increase a up to 3.6 (MV3/7) and to achieve higher voltages at the opening phase - UPOS=3.6UMarx4/7. To verify this approach set of experimental ...

  16. Power Factor Correction Using Magnetic Energy Recovery Current Switches (United States)

    Takaku, Taku; Isobe, Takanori; Narushima, Jun; Tsutsui, Hiroaki; Shimada, Ryuichi

    In this paper, we propose a Magnetic Energy Recovery Switch (MERS). The switch consists of four MOSFET elements and one capacitor. A power factor improvement is automatically possible regardless of the impedance and power frequency of the load by synchronized switching of MERS with a power supply. MERS itself generates voltage and compensates for the inductance voltage unlike a conventional series capacitor, so that another dc power supply is not needed. An experiment was carried out to demonstrate the automatic correction of the power factor. We can also expect energy saving of electromachies such as an electric motor by the power factor correction with MERS.

  17. Multiuser Switched Diversity Scheduling Schemes

    CERN Document Server

    Shaqfeh, Mohammad; Alouini, Mohamed-Slim


    Multiuser switched-diversity scheduling schemes were recently proposed in order to overcome the heavy feedback requirements of conventional opportunistic scheduling schemes by applying a threshold-based, distributed, and ordered scheduling mechanism. The main idea behind these schemes is that slight reduction in the prospected multiuser diversity gains is an acceptable trade-off for great savings in terms of required channel-state-information feedback messages. In this work, we characterize the achievable rate region of multiuser switched diversity systems and compare it with the rate region of full feedback multiuser diversity systems. We propose also a novel proportional fair multiuser switched-based scheduling scheme and we demonstrate that it can be optimized using a practical and distributed method to obtain the feedback thresholds. We finally demonstrate by numerical examples that switched-diversity scheduling schemes operate within 0.3 bits/sec/Hz from the ultimate network capacity of full feedback sys...

  18. Superconducting Complementary Output Switching Logic Operating at 10 - 18 GHz (United States)

    Jeffery, Mark; van Duzer, T.; Perold, Willem


    We have developed a new type of superconducting voltage-state logic called Complementary Output Switching Logic (COSL)(M. Jeffery, W. Perold, and T. Van Duzer, Appl. Phys. Lett., 69) (18), 2746 (1996). The basic COSL gates have been demonstrated at 10 GHz and complex 2-bit encoder circuits have operated at 5 - 8 GHz. The COSL gates have extremely low power dissipation, of order 10 μW/gate, and we have measured bit error rates less than 10-12 at 2 GHz. For these results we used the HYPRES 1 kA/cm^2 critical current density Nb Josephson fabrication process. In the present work we describe our recent test results using the new HYPRES 2.5 kA/cm^2 process. The increased critical current density process significantly improves the switching speed of the COSL devices. We will describe the Monte Carlo method used to optimize the COSL gates for 20 - 30 GHz operation, and the optimal circuit layouts including moats, or ground plane holes, to shield the circuits from trapped magnetic flux. Experimental test results will be presented for the basic COSL devices operating at 10 - 18 GHz. These are the fastest superconducting voltage-state logic devices ever reported, and may have many applications in low power ultra-high-speed digital systems of the future.

  19. New Modulation Strategy to Balance the Neutral-Point Voltage for Three-Level Neutral-Clamped Inverter Systems

    DEFF Research Database (Denmark)

    Choi, Uimin; Lee, June-Seok; Lee, Kyo-Beum


    This paper proposes a new modulation strategy that balances the neutral-point voltage for three-level neutral-clamped inverter systems. The proposed modulation replaces the P-type or N-type small switching states with other switching states that do not affect the neutral-point voltage. The zero a...

  20. Locally-Actuated Graphene-Based Nano-Electro-Mechanical Switch

    Directory of Open Access Journals (Sweden)

    Jian Sun


    Full Text Available The graphene nano-electro-mechanical switches are promising components due to their outstanding switching performance. However, most of the reported devices suffered from a large actuation voltages, hindering them from the integration in the conventional complementary metal-oxide-semiconductor (CMOS circuit. In this work, we demonstrated the graphene nano-electro-mechanical switches with the local actuation electrode via conventional nanofabrication techniques. Both cantilever-type and double-clamped beam switches were fabricated. These devices exhibited the sharp switching, reversible operation cycles, high on/off ratio, and a low actuation voltage of below 5 V, which were compatible with the CMOS circuit requirements.

  1. A Fixed-Frequency Bidirectional Resonant DC-DC Converter Suitable for Wide Voltage Gain Range

    DEFF Research Database (Denmark)

    Shen, Yanfeng; Wang, Huai; Blaabjerg, Frede


    . It is realized by configuring a full-bridge mode and a half-bridge mode operation during each switching cycle. The fixed-frequency phase-shift control schemes are applied and the normalized voltage gain can be always from 0.5 to 1, regardless of the load. The transformer root-mean-square (RMS) currents in both...... the forward and the reverse modes have a negligible variation with respect to the voltage gain, which is beneficial to low conduction losses throughout a wide voltage range. Moreover, the applied MOSFETs are soft-switched, allowing for minimum switching losses. Both the operation principles...

  2. Theoretical analysis of highly linear tunable filters using Switched-Resistor techniques

    NARCIS (Netherlands)

    Jiraseree-amornkun, Amorn; Jiraseree-Amornkun, A.; Worapishet, Apisak; Klumperink, Eric A.M.; Nauta, Bram; Surakampontorn, Wanlop


    Abstract—In this paper, an in-depth analysis of switched-resistor (S-R) techniques for implementing low-voltage low-distortion tunable active-RC filters is presented. The S-R techniques make use of switch(es) with duty-cycle-controlled clock(s) to achieve tunability of the effective resistance and,

  3. Impact of Voltage Conditions on Distributed Generation Connectivity in Medium Voltage Grids

    Directory of Open Access Journals (Sweden)

    Ireneusz Grządzielski


    Full Text Available A significant increase in the distributed generating sources connected and planned for connection to medium voltage (MV grids makes voltage criteria very important in assessing the sources’ connectivity. Many requests have been submitted for connection of distributed generation sources at a considerable distance (even a dozen or so kilometres from a main supply substation’s MV buses. As a rule, these are requests for the interconnection deep in an existing MV bus, but also directly to MV switching substation bays. Then maintaining appropriate voltage levels becomes a basic technical problem. Another technical problem relates to meeting the power quality criteria. THD index, and the level of individual harmonics, significantly increases, in many cases reaching or even exceeding the boundary values. With their extensive experience, the authors present examples and results of some analyses herewith. They indicate the impact of voltage conditions on the connection possibilities of distributed generation to MV grids.

  4. Growth and decay of surface voltage on silver diffused polyimide exposed to 3-15 keV electrons

    Energy Technology Data Exchange (ETDEWEB)

    Mahapatra, S K; Dhole, S D; Bhoraskar, V N [Department of Physics, University of Pune, Pune-411007 (India)


    During electron irradiation, the growth in the surface voltage on virgin and silver diffused polyimide sample was studied by varying electron energy from 3 to 15 keV and beam diameter from 3 to 15 mm. At a constant beam current, the surface voltage increased nonlinearly with electron energy but decreased slowly with beam diameter at fixed electron energy. At a surface voltage around saturation or beyond 3 kV, the electron beam was switched off and the decay in the surface voltage was studied for a period of 9 x 10{sup 4} s. The surface analysis revealed that the relative concentrations of carbon increased and that of the oxygen and the nitrogen decreased in the electron irradiated virgin and silver diffused polyimide sample, however in different proportions. Under the identical conditions of electron irradiation, the growth rate of the surface voltage, the post irradiated surface resistivity and the voltage decay constant of the silver diffused polyimide were lower than that of the virgin polyimide. The results of the present study reveal that the resistance of the silver diffused polyimide to keV electrons is higher than that of the virgin polyimide.

  5. Bias-voltage-controlled interlayer exchange coupling.

    Energy Technology Data Exchange (ETDEWEB)

    You, C.-Y.


    We propose a new system whose magnetization direction can be controlled by an applied bias voltage without an external magnetic field. The system consists of a four layered structure F{sub 1}/S/I/F{sub 2} (F{sub 1}, F{sub 2}: ferromagnets, S: spacer, I: insulator). An analytic expression for bias-voltage-controlled interlayer exchange coupling in this system is developed within a simple free-electron-like, one-dimensional approximation. According to the approach, the magnetic configurations of the two magnetic layers oscillate from antiferromagnetic to ferromagnetic with applied bias voltage. This implies that we can switch/rotate the magnetization direction without an external magnetic field. Possible applications of such a system are also discussed.

  6. High Efficiency Power Converter for Low Voltage High Power Applications

    DEFF Research Database (Denmark)

    Nymand, Morten

    and maximum output power. In chapter 3, a detailed analysis of dominant loss factors in high power converters for low voltage applications is presented. The analysis concludes that: • Power transformers for low voltage high power, if properly designed, will have extremely low leakage inductance......The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based....... • If optimally designed, boost converters will be much more efficient than comparable buck type converters for high power low voltage applications. • The use of voltage clamp circuits to protect primary switches in boost converters is no longer needed for device protection. On the other hand...

  7. High Voltage Bi-directional Flyback Converter for Capacitive Actuator

    DEFF Research Database (Denmark)

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.


    This paper presents a high voltage DC-DC converter topology for bi-directional energy transfer between a low voltage DC source and a high voltage capacitive load. The topology is a bi-directional flyback converter with variable switching frequency control during the charge mode, and constant...... switching frequency control during the discharge mode. The converter is capable of charging the capacitive load from 24 V DC source to 2.5 kV, and discharges it to 0 V. The flyback converter has been analyzed in detail during both charge and discharge modes, by considering all the parasitic elements...... in the converter, including the most dominating parameters of the high voltage transformer viz., self-capacitance and leakage inductance. The specific capacitive load for this converter is a dielectric electro active polymer (DEAP) actuator, which can be used as an effective replacement for conventional actuators...

  8. Intrinsic nanofilamentation in resistive switching

    KAUST Repository

    Wu, Xing


    Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.

  9. Buck supplies output voltage ripple reduction using fuzzy control

    Directory of Open Access Journals (Sweden)

    Nicu BIZON


    Full Text Available Using the PWM control for switching power supplies the peaks EMI noise appear at the switching frequency and its harmonics. Using randomize or chaotic PWM control techniques in these systems the power spectrum is spread out in all frequencies band spectral emissions, but with a bigger ripple in the output voltage. The proposed nonlinear feedback control method, which induces chaos, is based by fuzzy rules that minimize the output voltage ripple. The feasibility and effectiveness of this relative simple method is shown by simulation. A comparison with the previous control method is included, too.

  10. Parasitic resistive switching uncovered from complementary resistive switching in single active-layer oxide memory device (United States)

    Zhu, Lisha; Hu, Wei; Gao, Chao; Guo, Yongcai


    This paper reports the reversible transition processes between the bipolar and complementary resistive switching (CRS) characteristics on the binary metal-oxide resistive memory devices of Pt/HfO x /TiN and Pt/TaO x /TiN by applying the appropriate bias voltages. More interestingly, by controlling the amplitude of the negative bias, the parasitic resistive switching effect exhibiting repeatable switching behavior is uncovered from the CRS behavior. The electrical observation of the parasitic resistive switching effect can be explained by the controlled size of the conductive filament. This work confirms the transformation and interrelationship among the bipolar, parasitic, and CRS effects, and thus provides new insight into the understanding of the physical mechanism of the binary metal-oxide resistive switching memory devices.

  11. Fast response double series resonant high-voltage DC-DC converter (United States)

    Lee, S. S.; Iqbal, S.; Kamarol, M.


    In this paper, a novel double series resonant high-voltage dc-dc converter with dual-mode pulse frequency modulation (PFM) control scheme is proposed. The proposed topology consists of two series resonant tanks and hence two resonant currents flow in each switching period. Moreover, it consists of two high-voltage transformer with the leakage inductances are absorbed as resonant inductor in the series resonant tanks. The secondary output of both transformers are rectified and mixed before supplying to load. In the resonant mode operation, the series resonant tanks are energized alternately by controlling two Insulated Gate Bipolar Transistor (IGBT) switches with pulse frequency modulation (PFM). This topology operates in discontinuous conduction mode (DCM) with all IGBT switches operating in zero current switching (ZCS) condition and hence no switching loss occurs. To achieve fast rise in output voltage, a dual-mode PFM control during start-up of the converter is proposed. In this operation, the inverter is started at a high switching frequency and as the output voltage reaches 90% of the target value, the switching frequency is reduced to a value which corresponds to the target output voltage. This can effectively reduce the rise time of the output voltage and prevent overshoot. Experimental results collected from a 100-W laboratory prototype are presented to verify the effectiveness of the proposed system.

  12. Power flow controller with a fractionally rated back-to-back converter (United States)

    Divan, Deepakraj M.; Kandula, Rajendra Prasad; Prasai, Anish


    A power flow controller with a fractionally rated back-to-back (BTB) converter is provided. The power flow controller provide dynamic control of both active and reactive power of a power system. The power flow controller inserts a voltage with controllable magnitude and phase between two AC sources at the same frequency; thereby effecting control of active and reactive power flows between the two AC sources. A transformer may be augmented with a fractionally rated bi-directional Back to Back (BTB) converter. The fractionally rated BTB converter comprises a transformer side converter (TSC), a direct-current (DC) link, and a line side converter (LSC). By controlling the switches of the BTB converter, the effective phase angle between the two AC source voltages may be regulated, and the amplitude of the voltage inserted by the power flow controller may be adjusted with respect to the AC source voltages.

  13. Highly-Efficient and Modular Medium-Voltage Converters (United States)


    of the modular multilevel converter based on si and sic switching devices for medium/high-voltage applications," IEEE Trans. Electron Devices, vol...4. TITLE AND SUBTITLE Highly-Efficient and Modula Medium-Voltage Converters 6. AUTHOR(S) Maryam Saeedifard 7. PERFORMING ORGANIZATIC i NAME(S...improving the converter’s efficiency and power density. 15. SUBJECT TERMS Modular Multilevel Converters , DC-DC Conversion, DC-AC Conversion 16

  14. Development of all-solid-state flash x-ray generator with photoconductive semiconductor switches. (United States)

    Xun, Ma; Jianjun, Deng; Hongwei, Liu; Jianqiang, Yuan; Jinfeng, Liu; Bing, Wei; Yanling, Qing; Wenhui, Han; Lingyun, Wang; Pin, Jiang; Hongtao, Li


    A compact, low-jitter, and high repetitive rate all-solid-state flash x-ray generator making use of photo conductive semiconductor switches was developed recently for the diagnostic purpose of some hydrokinetical experiments. The generator consisted of twelve stages of Blumlein pulse forming networks, and an industrial cold cathode diode was used to generate intense x-ray radiations with photon energy up to 220 keV. Test experiments showed that the generator could produce >1 kA electron beam currents and x-ray pulses with ~40 ns duration under 100 Hz repetitive rates at least (limited by the triggering laser on hand), also found was that the delay time of the cathode explosive emission is crucial to the energy transfer efficiency of the whole system. In addition, factors affecting the diode impedance, how the switching synchronization and diode impedance determining the allowable operation voltage were discussed.

  15. Differential effect of T-type voltage-gated calcium channel disruption on renal plasma flow and glomerular filtration rate in vivo

    DEFF Research Database (Denmark)

    Thuesen, Anne D; Andersen, Henrik; Cardel, Majken


    of two T-type Cav knock-out mice strains. Continuous recordings of blood pressure and heart rate, and para-aminohippurate clearance (renal plasma flow) and inulin clearance (GFR) were performed in conscious, chronically catheterized, wild type and Cav 3.1-/- and Cav 3.2-/- mice. Contractility of afferent...

  16. Electrocaloric devices based on thini-film heat switches

    Energy Technology Data Exchange (ETDEWEB)

    Epstein, Richard I [Los Alamos National Laboratory; Malloy, Kevin J [UNM


    We describe a new approach to refrigeration and electrical generation that exploits the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of these thin-film heat engines can be at least as high as that of current thermoelectric devices. Advanced heat switches would enable thin-film heat engines to outperform conventional vaporcompression devices.

  17. Carbon Nanotube Switches for Communication and Memory Applications (United States)

    Kaul, Anupama B.; Epp, Larry; Wong, Eric W.; Kowalczyk, Robert


    Lateral CNT Switches: a) dc CNT switches were demonstrated to operate at low voltages, low powers and high speeds. b) RF simulations of switch in series configuration with metallized tube yielded good RF performance 1) Isolation simulated to be approx. 20 dB at 100 GHz. 2) Insertion loss simulated to be < 0.5 dB at 100 GHz. Vertical CNT Switches: a) Thermal CVD was used to mechanically constrain tubes in nanopockets; tubes not self-supporting. b) Demonstrated growth of vertically aligned arrays and single-few MWNTs using dc PECVD with Ni catalyst using optical lithography.

  18. Evaluation of Switch Currents in Nine-Switch Energy Conversion Systems

    DEFF Research Database (Denmark)

    Loh, Poh Chiang; Bahman, Amir Sajjad; Qin, Zian


    since been shown to experience a higher voltage stress, which can be lowered in some cases. A corresponding evaluation of its current stress is however lacking, and is hence addressed now by computing its switch currents when used for ac-ac, ac-dc, dc-ac and dc-dc energy conversions. Relevant...

  19. Switched on!

    CERN Document Server


    Like a star arriving on stage, impatiently followed by each member of CERN personnel and by millions of eyes around the world, the first beam of protons has circulated in the LHC. After years in the making and months of increasing anticipation, today the work of hundreds of people has borne fruit. WELL DONE to all! Successfully steered around the 27 kilometres of the world’s most powerful particle accelerator at 10:28 this morning, this first beam of protons circulating in the ring marks a key moment in the transition from over two decades of preparation to a new era of scientific discovery. "It’s a fantastic moment," said the LHC project leader Lyn Evans, "we can now look forward to a new era of understanding about the origins and evolution of the universe". Starting up a major new particle accelerator takes much more than flipping a switch. Thousands of individual elements have to work in harmony, timings have to be synchronize...

  20. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D.C.


    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  1. An optical fiber Bragg grating and piezoelectric ceramic voltage sensor (United States)

    Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui


    Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

  2. An optical fiber Bragg grating and piezoelectric ceramic voltage sensor. (United States)

    Yang, Qing; He, Yanxiao; Sun, Shangpeng; Luo, Mandan; Han, Rui


    Voltage measurement is essential in many fields like power grids, telecommunications, metallurgy, railways, and oil production. A voltage-sensing unit, consisting of fiber Bragg gratings (FBGs) and piezoelectric ceramics, based on which an optical over-voltage sensor was proposed and fabricated in this paper. No demodulation devices like spectrometer or Fabry-Perot filter were needed to gain the voltage signal, and a relatively large sensing frequency range was acquired in this paper; thus, the cost of the sensing system is more acceptable in engineering application. The voltage to be measured was directly applied to the piezoelectric ceramic, and deformation of the ceramics and the grating would be caused because of the inverse piezoelectric effect. With a reference grating, the output light intensity change will be caused by the FBG center wavelength change; thus, the relationship between the applied voltage and the output light intensity was established. Validation of the sensor was accomplished in the frequency range from 50 Hz to 20 kHz and switching impulse waves with a test platform; good linearity of the input-output characteristic was achieved. A temperature validation test was completed, showing that the sensor maintains good temperature stability. Experimental results show that the optical over-voltage sensor can be used for voltage monitoring, and if applied with a voltage divider, the sensor can be used to measure high voltage.

  3. High voltage test techniques

    CERN Document Server

    Kind, Dieter


    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  4. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM


    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  5. Stray voltage mitigation

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies


    This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

  6. Multilevel-Dc-Bus Inverter For Providing Sinusoidal And Pwm Electrical Machine Voltages (United States)

    Su, Gui-Jia [Knoxville, TN


    A circuit for controlling an ac machine comprises a full bridge network of commutation switches which are connected to supply current for a corresponding voltage phase to the stator windings, a plurality of diodes, each in parallel connection to a respective one of the commutation switches, a plurality of dc source connections providing a multi-level dc bus for the full bridge network of commutation switches to produce sinusoidal voltages or PWM signals, and a controller connected for control of said dc source connections and said full bridge network of commutation switches to output substantially sinusoidal voltages to the stator windings. With the invention, the number of semiconductor switches is reduced to m+3 for a multi-level dc bus having m levels. A method of machine control is also disclosed.

  7. Switch to second-line ART in West African routine care: incidence and reasons for switching. (United States)

    Landier, Jordi; Akonde, Alain; Pizzocolo, Cecilia; Haidara, Ibrahim; Drabo, Mahamadou; Pizarro, Louis; Fontanet, Arnaud; Katlama, Christine; Madec, Yoann


    In sub-Saharan Africa, while antiretroviral therapy (ART) becomes widely available, access to biological measurements to monitor patients under ART remains scarce, making the management of ART difficult. We described the management of switching to second-line ART where HIV care is provided mainly in secondary health-care structures, in the region of Segou, Mali. Of 865 patients, followed under ART for a median time of 15 months, 40 switched to second-line ART (3.3 switches/100 person years). Reason for switching was failure in 18 patients (after 21 months in median) and severe intolerance in 13 (after three months in median). Switching to second-line ART occurred earlier when motivated by intolerance than by failure. The low rate of switch compares well with other studies, but was low compared to the expected rate of failure, and may indicate that physicians are reluctant to switch ART when treatment options are limited.

  8. Switched Systems With Multiple Invariant Sets (United States)


    Motor Control Mode Figure 1: Schematic of mode switching with non-equilibrium limit sets. with σ = 1. For a positive rate of convergence λ > 0, it...while utilizing steady-state control strategies for static balancing or tasks requiring fine motor control. Mode- switching also implicates a large...before a third switching time, called t2. Then, we will compute a dwell time so that the trajectory must re-enter Hσ(t) before t2. By induction , the

  9. Reproducible and controllable induction voltage adder for scaled beam experiments

    Energy Technology Data Exchange (ETDEWEB)

    Sakai, Yasuo; Nakajima, Mitsuo; Horioka, Kazuhiko [Department of Energy Sciences, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan)


    A reproducible and controllable induction adder was developed using solid-state switching devices and Finemet cores for scaled beam compression experiments. A gate controlled MOSFET circuit was developed for the controllable voltage driver. The MOSFET circuit drove the induction adder at low magnetization levels of the cores which enabled us to form reproducible modulation voltages with jitter less than 0.3 ns. Preliminary beam compression experiments indicated that the induction adder can improve the reproducibility of modulation voltages and advance the beam physics experiments.

  10. Improvement of Transformer Relay Protection Sensitivity with Wide Range of Voltage Control

    Directory of Open Access Journals (Sweden)

    V. V. Kourganov


    Full Text Available The paper shows that it is possible to increase a design sensitivity coefficient of the transformer relay protection with voltage switch  ∆UРПН= ±16%  due to application of more precise method for calculation of minimum and maximum short circuit currents beyond  a transformer with intermediate branches of  a load control switch that correspond to an actual voltage variation range in 110 kV networks.

  11. Generalized Multi-Cell Switched-Inductor and Switched-Capacitor Z-source Inverters

    DEFF Research Database (Denmark)

    Li, Ding; Chiang Loh, Poh; Zhu, Miao


    Traditional voltage-source inverter is limited by its only voltage step-down operation, while current-source inverter is limited by its only current step-down mode. In order to add an extra boosting flexibility while keeping the number of active semi-conductors unchanged, voltage-type and current......-type Z-source in- verters were earlier proposed. These new classes of inverters are generally more robust and less sensitive to electromagnetic noises. However, their boosting capabilities are somehow compromised by high component stresses and poorer spectral performances caused by low modulation ratios....... Their boosting gains are, therefore, limited in practice. To overcome these shortcomings, the generalized switched-inductor and switched-capacitor Z-source inverters are proposed, whose extra boosting abilities and other advantages have already been verified in simulation and experiment....

  12. Hysteresis of liquid-based optical switch (United States)

    Wang, Xiahui; Huang, Kun; Ren, Hongwen


    A liquid device using two immiscible dielectric liquids is prepared. One liquid is black and forms a droplet on a glass substrate. The other liquid is used to fill the surrounding of the droplet. When a fringing field is applied to the device, the droplet is stretched by a dielectric force. The droplet can switch a probing beam. Our results show that the optical switch exhibits a hysteresis. The width of the hysteresis is dependent on the amplitude of the voltage, the frequency, and the viscosity of the surrounded liquid. By controlling the hysteresis, our device has potential applications in light shutters, optical attenuators, and displays.

  13. Magnetically switched power supply system for lasers (United States)

    Pacala, Thomas J. (Inventor)


    A laser power supply system is described in which separate pulses are utilized to avalanche ionize the gas within the laser and then produce a sustained discharge to cause the gas to emit light energy. A pulsed voltage source is used to charge a storage device such as a distributed capacitance. A transmission line or other suitable electrical conductor connects the storage device to the laser. A saturable inductor switch is coupled in the transmission line for containing the energy within the storage device until the voltage level across the storage device reaches a predetermined level, which level is less than that required to avalanche ionize the gas. An avalanche ionization pulse generating circuit is coupled to the laser for generating a high voltage pulse of sufficient amplitude to avalanche ionize the laser gas. Once the laser gas is avalanche ionized, the energy within the storage device is discharged through the saturable inductor switch into the laser to provide the sustained discharge. The avalanche ionization generating circuit may include a separate voltage source which is connected across the laser or may be in the form of a voltage multiplier circuit connected between the storage device and the laser.

  14. An Analytical Essential Switching Loss Estimation Method for Modular Multilevel Converters with Nearest Level Modulation

    DEFF Research Database (Denmark)

    Wang, Zhongxu; Wang, Huai; Zhang, Yi


    A novel switching power loss estimation method for modular multilevel converters (MMCs) with the nearest level modulation (NLM) is introduced in this paper. It focuses on the switching actions caused only by change of the inserted submodule (SM) number per arm, named as the essential switching...... transitions. Every essential switching action can be identified under the assumption of ideal sinusoidal arm voltage reference. The corresponding arm current value determining the switching energy can be obtained with the exclusive use of the exact time of the switching action. Effects of the modulation index...

  15. Design and simulation of fast-pulse control signal generator for the electro-holographic optical switch (United States)

    Song, Yansheng; Ji, Jiarong; Dou, Wenhua; Wen, Changli


    The electro-holographic optical switch based on the quadratic electro-optic effect in paraelectric photorefractive crystals requires driving signal of fast pulse. The pulse rise/fall time and voltage are 10-10-10-8s and 102-103V, respectively, depending on the applications. A pulse control signal generator for the electro-holographic optical switch was designed and simulated. Considering the integration of pulse signal generator and the switch, the circuit employs three stages compact Marx generators utilizing parallel avalanche bipolar junction transistors series operated in the avalanche mode in each stage. These transistors and the crystals are mounted on printed circuit board. According to the simulated results, the output voltage ranged from 1.2kV to 1.5kV. The rise/fall time of this pulse is less than 3 nanoseconds. The pulse width is 20 nanoseconds, and trigger delay is about 1 nanosecond. The repetition rate is less than 50MHz which can be increased by reducing the pulse width of the trigger. The simulation results indicate that the pulse control signals from the designed generator can match the application of electro-holographic optical switch well.

  16. Spin Switching via Quantum Dot Spin Valves (United States)

    Gergs, N. M.; Bender, S. A.; Duine, R. A.; Schuricht, D.


    We develop a theory for spin transport and magnetization dynamics in a quantum dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.

  17. 46 CFR 111.01-17 - Voltage and frequency variations. (United States)


    ... 46 Shipping 4 2010-10-01 2010-10-01 false Voltage and frequency variations. 111.01-17 Section 111... ELECTRIC SYSTEMS-GENERAL REQUIREMENTS General § 111.01-17 Voltage and frequency variations. Unless... and +6 percent to −10 percent of rated voltage. This limitation does not address transient conditions. ...

  18. Robust Frequency and Voltage Stability Control Strategy for Standalone AC/DC Hybrid Microgrid

    Directory of Open Access Journals (Sweden)

    Furqan Asghar


    Full Text Available The microgrid (MG concept is attracting considerable attention as a solution to energy deficiencies, especially in remote areas, but the intermittent nature of renewable sources and varying loads cause many control problems and thereby affect the quality of power within a microgrid operating in standalone mode. This might cause large frequency and voltage deviations in the system due to unpredictable output power fluctuations. Furthermore, without any main grid support, it is more complex to control and manage the system. In past, droop control and various other coordination control strategies have been presented to stabilize the microgrid frequency and voltages, but in order to utilize the available resources up to their maximum capacity in a positive way, new and robust control mechanisms are required. In this paper, a standalone microgrid is presented, which integrates renewable energy-based distributed generations and local loads. A fuzzy logic-based intelligent control technique is proposed to maintain the frequency and DC (direct current-link voltage stability for sudden changes in load or generation power. Also from a frequency control perspective, a battery energy storage system (BESS is suggested as a replacement for a synchronous generator to stabilize the nominal system frequency as a synchronous generator is unable to operate at its maximum efficiency while being controlled for stabilization purposes. Likewise, a super capacitor (SC and BESS is used to stabilize DC bus voltages even though maximum possible energy is being extracted from renewable generated sources using maximum power point tracking. This newly proposed control method proves to be effective by reducing transient time, minimizing the frequency deviations, maintaining voltages even though maximum power point tracking is working and preventing generators from exceeding their power ratings during disturbances. However, due to the BESS limited capacity, load switching

  19. Coordinated Voltage Control of Active Distribution Network

    Directory of Open Access Journals (Sweden)

    Xie Jiang


    Full Text Available This paper presents a centralized coordinated voltage control method for active distribution network to solve off-limit problem of voltage after incorporation of distributed generation (DG. The proposed method consists of two parts, it coordinated primal-dual interior point method-based voltage regulation schemes of DG reactive powers and capacitors with centralized on-load tap changer (OLTC controlling method which utilizes system’s maximum and minimum voltages, to improve the qualified rate of voltage and reduce the operation numbers of OLTC. The proposed coordination has considered the cost of capacitors. The method is tested using a radial edited IEEE-33 nodes distribution network which is modelled using MATLAB.

  20. A Switched-Capacitor Based High Conversion Ratio Converter for Renewable Energy Applications

    DEFF Research Database (Denmark)

    Li, Kerui; Yin, Zhijian; Yang, Yongheng


    A high step-up switched-capacitor based converter is proposed in this paper. The proposed converter features high conversion ratio, low voltage stress and continuous input current, which makes it very suitable for renewable energy applications like photovoltaic systems. More importantly......, the proposed switched-capacitor cells in series with converter can be generalized in two ways, resulting in dc-dc converters of ultra-high dc conversion ratios. Theoretical analysis, simulation and experimental tests have demonstrated the superior performance of the proposed converter in terms of high dc...... voltage gain, low voltage stress on the switches, continuous input current, and relatively high efficiency....

  1. PV source based high voltage gain current fed converter (United States)

    Saha, Soumya; Poddar, Sahityika; Chimonyo, Kudzai B.; Arunkumar, G.; Elangovan, D.


    This work involves designing and simulation of a PV source based high voltage gain, current fed converter. It deals with an isolated DC-DC converter which utilizes boost converter topology. The proposed converter is capable of high voltage gain and above all have very high efficiency levels as proved by the simulation results. The project intends to produce an output of 800 V dc from a 48 V dc input. The simulation results obtained from PSIM application interface were used to analyze the performance of the proposed converter. Transformer used in the circuit steps up the voltage as well as to provide electrical isolation between the low voltage and high voltage side. Since the converter involves high switching frequency of 100 kHz, ultrafast recovery diodes are employed in the circuitry. The major application of the project is for future modeling of solar powered electric hybrid cars.

  2. RETRACTED ARTICLE: Dynamic voltage restorer controller using grade algorithm

    Directory of Open Access Journals (Sweden)

    S. Deepa


    Full Text Available This paper deals with the terminology and various issues about power quality problems. This problem occurs owing to voltage sag, swell, harmonics, and surges. The sustained overvoltage and undervoltage originated from power system may often damage/or disrupt computerized process. Voltage sags and harmonics disturb the power quality and this can be overcome by custom power device called dynamic voltage restorer (DVR. The DVR is normally installed between the source voltage and critical or sensitive load. The vital role of DVR depends on the efficiency of the control technique involved in switching circuit of the inverter. In this paper, Combination of improved grade algorithm with fuzzy membership function is used to decide the Proportional-Integral coefficients. The DVR works well both in balanced and unbalanced conditions of voltages. The simulation results show the efficiency of the proposed method.

  3. Fast Self-Synchronization between LowVoltage Microgrid and Inverter using Virtual Synchronous Converter

    Directory of Open Access Journals (Sweden)

    Md Ruhul Amin


    Full Text Available In this paper, a fast self-synchronization known as virtual synchronous converter (VSCon between single-phase microgrid and inverter in low-voltage microgrid, has been developed in Matlab/Simulink. The idea is to any phase locked loop (PLL circuit for inverter-microgrid synchronization in order to improve the synchronization time. As known, it is difficult and lengthy process to tune the PLL gain parameters to reach suitable performance for synchronizing among the voltage, phase-angle and frequency between them. Due to this problem, a fast self synchronization technique is needed in order to minimize the time losses at the microgrid connection. Therefore, the VSCon has been developed which is based on the synchronous generator mathematical model but in virtual environment representation. It has been applied in the inverter control for generating switching pattern to the inverter switches in order to respond to the grid voltage for improve the synchronization. For a prove of concept, several simulation tests in MATLAB models have been conducted, in order to see the effectiveness of this VSCon. First test has been conducted, when a 240V, 50Hz frequency grid source is used for observing the self-synchronization the system with the power flows output. Furthermore, the next test is conducted when the grid frequency is changed from the rated frequency at 50Hz to 51Hz and the result shows the VSCon in inverter control takes nearly 40ms to synchronize to this new frequency value. The test on grid phase-angle delay also been tested when ac grid voltage has 150 phase delay. As from all the results, the improved inverter control with VSCon structure is able to have fast and self-synchronized between the invertergrid connection before the power from the inverter can be transferred.

  4. Voltage verification unit (United States)

    Martin, Edward J [Virginia Beach, VA


    A voltage verification unit and method for determining the absence of potentially dangerous potentials within a power supply enclosure without Mode 2 work is disclosed. With this device and method, a qualified worker, following a relatively simple protocol that involves a function test (hot, cold, hot) of the voltage verification unit before Lock Out/Tag Out and, and once the Lock Out/Tag Out is completed, testing or "trying" by simply reading a display on the voltage verification unit can be accomplished without exposure of the operator to the interior of the voltage supply enclosure. According to a preferred embodiment, the voltage verification unit includes test leads to allow diagnostics with other meters, without the necessity of accessing potentially dangerous bus bars or the like.

  5. Impact analysis of tap switch out of step for converter transformer (United States)

    Hong-yue, ZHANG; Zhen-hua, ZHANG; Zhang-xue, XIONG; Gao-wang, YU


    AC transformer load regulation is mainly used to adjust the load side voltage level, improve the quality of power supply, the voltage range is relatively narrow. In DC system, converter transformer is the core equipment of AC and DC power converter and inverter. converter transformer tap adjustment can maintain the normal operation of the converter in small angle range control, the absorption of reactive power, economic operation, valve less stress, valve damping circuit loss, AC / DC harmonic component is also smaller. In this way, the tap switch action is more frequent, and a large range of the tap switch adjustment is required. Converter transformer with a more load voltage regulation switch, the voltage regulation range of the switch is generally 20~30%, the adjustment of each file is 1%~2%. Recently it is often found that the tap switch of Converter Transformers is out of step in Converter station. In this paper, it is analyzed in detail the impact of tap switch out of step for differential protection, overexcitation protection and zero sequence over current protection. Analysis results show that: the tap switch out of step has no effect on the differential protection and the overexcitation protection including the tap switch. But the tap switch out of step has effect on zero sequence overcurrent protection of out of step star-angle converter transformer. The zero sequence overcurrent protection will trip when the tap switch out of step is greater than 3 for out of step star-angle converter transformer.

  6. Study on torque algorithm of switched reluctance motor

    Directory of Open Access Journals (Sweden)

    Xiaoguang LI


    Full Text Available To solve the torque ripple problem of switched reluctance motor under the traditional control method, a direct torque control method for switched reluctance motor is proposed. Direct torque algorithm controls flux magnitude and direction by querying appropriate voltage vector in switch list. Taking torque as direct control variable can reduce the torque ripple of the motor, which broadens the application fields of switched reluctance motor. Starting with the theory of direct torque algorithm, based on MATLAB/Simulink platform, direct torque control and chopped current control system simulation model are designed. Under the condition that switched reluctance motor model and its load are consistent, it is compared with chopped current algorithm. At last, the feasibility of direct torque algorithm is verified through the platform of hardware experiments. It demonstrates that using direct torque algorithm can make the torque ripple be controlled effectively, which provides a wider application field for the switched reluctance motor.

  7. High conversion ratio DC-DC converter with isolated transformer and switched-clamp capacitor for Taiwan photon source (United States)

    Wong, Y.-S.; Chen, J.-F.; Liu, K.-B.; Hsieh, Y.-P.


    A new high step-up voltage converter that combines a switch capacitor and isolated transformer, together with a passive clamp circuit, is employed to reduce voltage stress on the main power switch. The voltage stress of the power switch should be clamped to 1/4 Vo, and the proposed converter can achieve high step-up voltage gain with appropriate duty ratio. The energy of the leakage inductor can be recycled by the clamp capacitor because of the passive clamp circuit, and low On-state resistance RDS(on) of the power switch can be adopted to reduce the conduction loss. In this paper, several mathematical derivations are presented, CCM and DCM operating principle are discussed, and experimental results are provided to verify the effectiveness of converter topology. Finally, a 24-V-input voltage to 200-V-output voltage and a 150 W output power prototype converter are fabricated in the laboratory.

  8. Research on IGBT solid state switch

    CERN Document Server

    Gan Kong Yin; Wang Xiao Feng; Wang Lang Ping; Wang Song Yan; Chu, P K; Wu Hong Chen


    The experiments on the IGBT solid state switch for induction accelerator was carried out with two series 1.2 kV, 75 A IGBT (GA75TS120U). The static and dynamic balancing modules were carried out with metal oxide varistors, capacities and diodes in order to suppress the over-voltage during IGBT on and off. Experimental results show that IGBT solid state switch works very stable under the different conditions. It can output peak voltage 1.8 kV, rise time 300 ns, fall time 1.64 mu s waveforms on the loads. The simulation data using OrCAD are in accord with experimental results except the rise time

  9. Design of a miniaturized high quality power switching converter for space application (United States)

    Clemans, D. W.; Thibodeaux, R. J.

    Power Distribution System (PDS) requirements for space applications are becoming more demanding. Desired PDS architectures consists of a high voltage (270) dc distribution bus for low power loss with local switching regulators to provide high quality power at the load interface. There are difficult performance requirements that these local switching regulators must meet in terms of size, weight, efficiency, transient response, and wide input voltage range. The design of a hybridized switching regulator is realized with a series resonant half-bridge topology employing a high switching frequency. This paper describes the design, analysis, and fabrication of a breadboard power converter for a local rlegulator scheme in a PDS for space applications.


    Directory of Open Access Journals (Sweden)

    V. F. Sivokobilenko


    Full Text Available The method for reliability of increasing of electrical power supply system with motor load at short-time power failure by improvement of fast-acting automatic transfer switch starting element is considered. Starting element of fast-acting automatic transfer switch on proposed method is based on definition of the angles between direct sequence voltages on main and reserve power sources and between direct sequence currents on main and reserve power sources. Definition of direct and inverse sequences currents and voltages values on introduced method is based on measuring and processing of current and voltage momentary values. The example of the fast-acting automatic transfer switch successful operation with using of the offered approach is given

  11. A Novel Single Phase Hybrid Switched Reluctance Motor Drive System

    DEFF Research Database (Denmark)

    Liang, Jianing; Xu, Guoqing; Jian, Linni


    In this paper, a novel single phase hybrid switched reluctance motor(SRM) drive system is proposed. It integrated a single phase hybrid SRM and a novel single phase boost converter. This motor can reduce the number of phase switch. And the permanent magnet which is used in the motor can improve...... the performance and efficiency of SR motor. However, the inherent characteristic of this motor is that the negative torque is very sensitive with the excitation current near the turn-on angle. The slow excitation current limits the torque generation region and reduces the average torque. Therefore, a novel single...... phase boost converter is applied to improve the performance of this motor. It is easy to generate a double dclink voltage and dc-link voltage and switch both of them. The voltage of boost capacitor is self balance, so the protective circuit is not need to consider. The fast excitation mode helps hybrid...

  12. SVPWM Technique with Varying DC-Link Voltage for Common Mode Voltage Reduction in a Matrix Converter and Analytical Estimation of its Output Voltage Distortion (United States)

    Padhee, Varsha

    Common Mode Voltage (CMV) in any power converter has been the major contributor to premature motor failures, bearing deterioration, shaft voltage build up and electromagnetic interference. Intelligent control methods like Space Vector Pulse Width Modulation (SVPWM) techniques provide immense potential and flexibility to reduce CMV, thereby targeting all the afore mentioned problems. Other solutions like passive filters, shielded cables and EMI filters add to the volume and cost metrics of the entire system. Smart SVPWM techniques therefore, come with a very important advantage of being an economical solution. This thesis discusses a modified space vector technique applied to an Indirect Matrix Converter (IMC) which results in the reduction of common mode voltages and other advanced features. The conventional indirect space vector pulse-width modulation (SVPWM) method of controlling matrix converters involves the usage of two adjacent active vectors and one zero vector for both rectifying and inverting stages of the converter. By suitable selection of space vectors, the rectifying stage of the matrix converter can generate different levels of virtual DC-link voltage. This capability can be exploited for operation of the converter in different ranges of modulation indices for varying machine speeds. This results in lower common mode voltage and improves the harmonic spectrum of the output voltage, without increasing the number of switching transitions as compared to conventional modulation. To summarize it can be said that the responsibility of formulating output voltages with a particular magnitude and frequency has been transferred solely to the rectifying stage of the IMC. Estimation of degree of distortion in the three phase output voltage is another facet discussed in this thesis. An understanding of the SVPWM technique and the switching sequence of the space vectors in detail gives the potential to estimate the RMS value of the switched output voltage of any

  13. An Integrated Inductor For Parallel Interleaved Three-Phase Voltage Source Converters

    DEFF Research Database (Denmark)

    Gohil, Ghanshyamsinh Vijaysinh; Bede, Lorand; Teodorescu, Remus


    Three phase Voltage Source Converters (VSCs) are often connected in parallel to realize high current output converter system. The harmonic quality of the resultant switched output voltage can be improved by interleaving the carrier signals of these parallel connected VSCs. As a result, the line...

  14. A Bidirectional Multi-Port DC-DC Converter Integrating Voltage Equalizer

    DEFF Research Database (Denmark)

    Chen, Jianfei; Hou, Shiying; Deng, Fujin


    A novel bidirectional multi-port dc-dc converter integrating voltage equalizer based on switched-capacitor voltage accumulator (SCVA) is proposed. It has two operating modes of charging and discharging for battery modules. All battery modules are connected in series indirectly and can be equalized...

  15. Study of Drive System for Linear Induction Motor Using Magnetic Energy Recovery Switch (United States)

    Isobe, Takanori; Takaku, Taku; Kitahara, Tadayuki; Sumitani, Hideo; Shimada, Ryuichi

    This paper proposes a suitable power supply for driving linear induction motors. The power supply consists of a voltage source inverter (VSI) and a magnetic energy recovery switch (MERS). Circuit configuration and operation principles of the power supply are described. Power factor correction by MERS can cause an increase of the output power. Technical advantages of using MERS compared with increasing voltage rating of VSI are discussed. Some experiments with a linear induction motor were conducted. The results confirms that MERS can reduce capacity of the VSI or increase output with the same VSI capacity. The number of devices and losses are evaluated on large scale drive system. A half-bridge type of MERS is proposed and discussed. The half-bridge MERS improves disadvantages of using MERS.

  16. Voltage Control in Wind Power Plants with Doubly Fed Generators

    DEFF Research Database (Denmark)

    Garcia, Jorge Martinez

    the reactive power operation of the converters, in steadystate, within a maximum band of 10 %. It is clear that an on-load tap changer system will help to keep the stator voltage close to its nominal value, but the action of the mechanically switched capacitors is badly influencing the on-load tap changer line......In this work, the process of designing a wind power plant composed of; doubly fed induction generators, a static compensator unit, mechanically switched capacitors and on-load tap changer, for voltage control is shown. The selected control structure is based on a decentralized system, since...... measured current at medium voltage, thus reducing the tap moving operations. Finally, due to the wind power plant reactive power is sized for maximum active power level, it is expected that a big amount of reactive power remains unused most of the time due to the wind power generation characteristics...

  17. The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory (United States)

    Hu, Cong; Wang, Qi; Bai, Shuai; Xu, Min; He, Deyan; Lyu, Deyuan; Qi, Jing


    Oxygen vacancy (Vo) is believed to control the switching mechanism of metal oxide resistive switching memory. However, an accurate and quantitative theory to prove this point of view remains absent. In this letter, we propose a model combining the Poole-Frenkel effect, space charge limited current, and the modification of Vo density to simulate the current-voltage curves. The calculated results show reasonable agreements with the experimental data, which indicates that resistive switching between high resistance state and low resistance state in the devices of Al/ZnO/p+-Si is led by the density change of Vo. Furthermore, the essence of this leading effect of Vo density is explained by electrons capture and emission via oxygen vacancies. This research demonstrates the significance of Vo in theory and gives an insight into the switching mechanism.

  18. Sensorless Commutation Control of Switched Reluctance Motor


    N.H. Mvungi


    This paper addresses control of commutation of switched reluctance (SR) motor without the use of a physical position detector. Rotor position detection schemes for SR motor based on magnetisation characteristics of the motor use normal excitation or applied current /voltage pulses. The resulting schemes are referred to as passive or active methods respectively. The research effort is in realizing an economical sensorless SR rotor position detector that is accurate, reliable and robust to suit...

  19. Thermodynamics of Phase Transitions and Bipolar Filamentary Switching in Resistive Random-Access Memory (United States)

    Karpov, V. G.; Niraula, D.; Karpov, I. V.; Kotlyar, R.


    We present a phenomenological theory of bipolar filamentary resistive random-access memory describing the commonly observed features of their current-voltage characteristics. Our approach follows the approach of a thermodynamic theory developed earlier for chalcogenide memory and threshold switches and largely independent of their microscopic details. It explains, without adjustable parameters, such features as the domains of filament formation and switching, voltage-independent current in set and current-independent voltage in reset regimes, the relation between the set and reset voltages, filament resistance independent of its length, etc. Furthermore, it expresses the observed features through the material and circuitry parameters, thus paving the way to device improvements.

  20. The dynamic nature of systems consolidation: Stress during learning as a switch guiding the rate of the hippocampal dependency and memory quality. (United States)

    Pedraza, Lizeth K; Sierra, Rodrigo O; Boos, Flávia Z; Haubrich, Josué; Quillfeldt, Jorge A; Alvares, Lucas de Oliveira


    Memory fades over time, becoming more schematic or abstract. The loss of contextual detail in memory may reflect a time-dependent change in the brain structures supporting memory. It has been well established that contextual fear memory relies on the hippocampus for expression shortly after learning, but it becomes hippocampus-independent at a later time point, a process called systems consolidation. This time-dependent process correlates with the loss of memory precision. Here, we investigated whether training intensity predicts the gradual decay of hippocampal dependency to retrieve memory, and the quality of the contextual memory representation over time. We have found that training intensity modulates the progressive decay of hippocampal dependency and memory precision. Strong training intensity accelerates systems consolidation and memory generalization in a remarkable timeframe match. The mechanisms underpinning such process are triggered by glucocorticoid and noradrenaline released during training. These results suggest that the stress levels during emotional learning act as a switch, determining the fate of memory quality. Moderate stress will create a detailed memory, whereas a highly stressful training will develop a generic gist-like memory. © 2015 Wiley Periodicals, Inc.

  1. Latching micro optical switch (United States)

    Garcia, Ernest J; Polosky, Marc A


    An optical switch reliably maintains its on or off state even when subjected to environments where the switch is bumped or otherwise moved. In addition, the optical switch maintains its on or off state indefinitely without requiring external power. External power is used only to transition the switch from one state to the other. The optical switch is configured with a fixed optical fiber and a movable optical fiber. The movable optical fiber is guided by various actuators in conjunction with a latching mechanism that configure the switch in one position that corresponds to the on state and in another position that corresponds to the off state.

  2. Bipolar resistive switching in Si/Ag nanostructures (United States)

    Dias, C.; Lv, H.; Picos, R.; Aguiar, P.; Cardoso, S.; Freitas, P. P.; Ventura, J.


    Resistive switching devices are being intensively studied aiming a large number of promising applications such as nonvolatile memories, artificial neural networks and sensors. Here, we show nanoscale bipolar resistive switching in Pt/Si/Ag/TiW structures, with a dielectric barrier thickness of 20 nm. The observed phenomenon is based on the formation/rupture of metallic Ag filaments in the otherwise insulating Si host material. No electroforming process was required to achieve resistive switching. We obtained average values of 0.23 V and -0.24 V for the Set and Reset voltages, respectively. The stability of the switching was observed for over 100 cycles, together with a clear separation of the ON (103 Ω) and OFF (102 Ω) states. Furthermore, the influence of the Set current compliance on the ON resistance, resistances ratio and Set/Reset voltages percentage variation was also studied.

  3. Composite Thermal Switch (United States)

    McDonald, Robert; Brawn, Shelly; Harrison, Katherine; O'Toole, Shannon; Moeller, Michael


    Lithium primary and lithium ion secondary batteries provide high specific energy and energy density. The use of these batteries also helps to reduce launch weight. Both primary and secondary cells can be packaged as high-rate cells, which can present a threat to crew and equipment in the event of external or internal short circuits. Overheating of the cell interior from high current flows induced by short circuits can result in exothermic reactions in lithium primary cells and fully charged lithium ion secondary cells. Venting of the cell case, ejection of cell components, and fire have been reported in both types of cells, resulting from abuse, cell imperfections, or faulty electronic control design. A switch has been developed that consists of a thin layer of composite material made from nanoscale particles of nickel and Teflon that conducts electrons at room temperature and switches to an insulator at an elevated temperature, thus interrupting current flow to prevent thermal runaway caused by internal short circuits. The material is placed within the cell, as a thin layer incorporated within the anode and/or the cathode, to control excess currents from metal-to-metal or metal-to-carbon shorts that might result from cell crush or a manufacturing defect. The safety of high-rate cells is thus improved, preventing serious injury to personnel and sensitive equipment located near the battery. The use of recently available nanoscale particles of nickel and Teflon permits an improved, homogeneous material with the potential to be fine-tuned to a unique switch temperature, sufficiently below the onset of a catastrophic chemical reaction. The smaller particles also permit the formation of a thinner control film layer (switch (CTS(TradeMark)) coating can be incorporated in either the anode or cathode or both. The coating can be applied in a variety of different processes that permits incorporation in the cell and electrode manufacturing processes. The CTS responds quickly

  4. High-speed laser speckle photography. Part 1: repetitively Q-switched ruby laser light source (United States)

    Huntley, Jonathan M.


    A system to record laser speckle photographs at framing rates in the range of 105 to 106 frames/s has been developed, based on a repetitively Q- switched ruby laser and rotating mirror high-speed camera. The laser and electro-optic modulator are described. The circuit diagram for an inexpensive high-voltage amplifier, capable of switching 2.5 kV at up to 1 MHz with fall and rise times of 100 and 200 ns, respectively, is given. The resulting optical pulse trains have pulse energy fluctuations at half the driving frequency. We show how these may be suppressed by reducing the time the Q- switch is left open. Both the subharmonic component and its suppression are explained from limiting cases of the laser rate equations. Representative pulse trains over a range of repetition rates are given; pulse energies greater than 20 mJ with pulse energy fluctuations of less than plus or minus one-half of a stop are obtained at rates of up to 500 kHz.

  5. Tunneling Nanoelectromechanical Switches Based on Compressible Molecular Thin Films. (United States)

    Niroui, Farnaz; Wang, Annie I; Sletten, Ellen M; Song, Yi; Kong, Jing; Yablonovitch, Eli; Swager, Timothy M; Lang, Jeffrey H; Bulović, Vladimir


    Abrupt switching behavior and near-zero leakage current of nanoelectromechanical (NEM) switches are advantageous properties through which NEMs can outperform conventional semiconductor electrical switches. To date, however, typical NEMs structures require high actuation voltages and can prematurely fail through permanent adhesion (defined as stiction) of device components. To overcome these challenges, in the present work we propose a NEM switch, termed a "squitch," which is designed to electromechanically modulate the tunneling current through a nanometer-scale gap defined by an organic molecular film sandwiched between two electrodes. When voltage is applied across the electrodes, the generated electrostatic force compresses the sandwiched molecular layer, thereby reducing the tunneling gap and causing an exponential increase in the current through the device. The presence of the molecular layer avoids direct contact of the electrodes during the switching process. Furthermore, as the layer is compressed, the increasing surface adhesion forces are balanced by the elastic restoring force of the deformed molecules which can promote zero net stiction and recoverable switching. Through numerical analysis, we demonstrate the potential of optimizing squitch design to enable large on-off ratios beyond 6 orders of magnitude with operation in the sub-1 V regime and with nanoseconds switching times. Our preliminary experimental results based on metal-molecule-graphene devices suggest the feasibility of the proposed tunneling switching mechanism. With optimization of device design and material engineering, squitches can give rise to a broad range of low-power electronic applications.

  6. Negative-resistance voltage-current characteristics of superconductor contact junctions for macro-scale applications

    CERN Document Server

    Takayasu, M; Minervini, J V; 10.1109/TASC.2003.812854


    Voltage-current characteristics of mechanical pressure contact junctions between superconducting wires are investigated using a voltage-driving method. It is found that the switching regions at low voltages result from negative resistance of the contact junction. The current transport of the contact junctions is discussed from the perspective of two existing models: the multiple Andreev reflections at the two SN interfaces of a SNS (Superconductor/Normal metal /Superconductor) junction and the inhomogeneous multiple Josephson weak-link array. (13 refs).

  7. Switch device having a non-linear transmission line (United States)

    Elizondo-Decanini, Juan M.


    Switching devices are provided. The switching devices include an input electrode, having a main electrode and a trigger electrode, and an output electrode. The main electrode and the trigger electrode are separated from the output electrode by a main gap and a trigger gap, respectively. During operation, the trigger electrode compresses and amplifies a trigger voltage signal causing the trigger electrode to emit a pulse of energy. This pulse of energy form plasma near the trigger electrode, either by arcing across the trigger gap, or by arcing from the trigger electrode to the main electrode. This plasma decreases the breakdown voltage of the main gap. Simultaneously, or near simultaneously, a main voltage signal propagates through the main electrode. The main voltage signal emits a main pulse of energy that arcs across the main gap while the plasma formed by the trigger pulse is still present.

  8. Aspects Regarding SF6 Switch Disconnector Framework Design

    Directory of Open Access Journals (Sweden)

    Liviu NEAMT


    Full Text Available The complexity of the designing process of a switch disconnector framework comes from the almost impossible task to appreciate the discrepancy between the ideal and practical electric strength. Complicated geometries characterized by nonuniform fields are predesigned based on a set of analytical relations and corrected/optimized based on numerical methods and high voltage testing on prototypes. This paper suggest some approaches to minimize the effort and the steps required to achieve an acceptable stainless steel housing, in the insulators area, for a medium voltage SF6 switch disconnector. The results are based on simple analytical evaluation and finite element analysis in both 2D and 3D configurations.

  9. Power Factor Improvement in Switched Reluctance Motor Drive

    Directory of Open Access Journals (Sweden)



    Full Text Available A Switched Reluctance Motor (SRM drive is a variable speed motor drive system with unique characteristics. The switching of voltage into the phase winding and pulsating AC input current leads to low power factor and high harmonic contents. In this paper, the power factor is improved using boost converter. The hardware results are taken for a DC input voltage of 60 V to the SRM with different load currents. From the results, it is found that the total current harmonic distortion and individual current harmonics are less with Power Factor Controller (PFC. The power factor of the circuit is improved with the proposed power factor controller.

  10. Imaging voltage in neurons (United States)

    Peterka, Darcy S.; Takahashi, Hiroto; Yuste, Rafael


    In the last decades, imaging membrane potential has become a fruitful approach to study neural circuits, especially in invertebrate preparations with large, resilient neurons. At the same time, particularly in mammalian preparations, voltage imaging methods suffer from poor signal to noise and secondary side effects, and they fall short of providing single-cell resolution when imaging of the activity of neuronal populations. As an introduction to these techniques, we briefly review different voltage imaging methods (including organic fluorophores, SHG chromophores, genetic indicators, hybrid, nanoparticles and intrinsic approaches), and illustrate some of their applications to neuronal biophysics and mammalian circuit analysis. We discuss their mechanisms of voltage sensitivity, from reorientation, electrochromic or electro-optical phenomena, to interaction among chromophores or membrane scattering, and highlight their advantages and shortcomings, commenting on the outlook for development of novel voltage imaging methods. PMID:21220095

  11. Estimation on the switching losses at IGBT bridges power converter


    Stefanov, Goce; Karacinov, Ljupco; Cundev, Dobri


    ABSTRACT. In the paper estimation on the switching losses at IGBT bridge converter with the output serial resonant load is given. The converter works on frequency higher than resonant frequency and supports the work of IGBT transistors in the bridge with zero voltage turn on. In the analysis of the converter, PowerSim and SemiSiel simulation programs is used. The results to the switching losses estimated by simulation are compared with the results in a practical realized converter.

  12. Picosecond Joule heating in photoconductive switch electrodes (United States)

    Vermeersch, Bjorn; Pernot, Gilles; Lu, Hong; Bahk, Je-Hyeong; Gossard, Art; Shakouri, Ali


    We present experimental observations of picosecond Joule heating inside the gold metallization of ErAs:GaAs photoconductive switches. Femtosecond laser time-domain thermoreflectance is employed to resolve the fast thermal dynamics in the central switch electrode during generation and transmission of rf electrical pulses. Sharp features in the thermoreflectance signal scaling quadratically with the bias/pulse voltage reveal Joule heating with durations ≤5 ps inside the gold metal. The temporal shape and rise time of the signals is in excellent agreement with the theoretical pulse wave form and subpicosecond carrier lifetime of the active medium. Probing different locations on the electrode shows the propagation, attenuation, and dispersion of the electrical pulses along the coplanar waveguide structure. Overall, the presented photothermal experiments demonstrate great potential to reveal the internal dynamics of photoconductive switches, characterize transmission lines, and study ultrafast heating in metals.

  13. Chalcogenide Nanoionic-based Radio Frequency Switch (United States)

    Nessel, James (Inventor); Lee, Richard (Inventor)


    A nonvolatile nanoionic switch is disclosed. A thin layer of chalcogenide glass engages a substrate and a metal selected from the group of silver and copper photo-dissolved in the chalcogenide glass. A first oxidizable electrode and a second inert electrode engage the chalcogenide glass and are spaced apart from each other forming a gap therebetween. A direct current voltage source is applied with positive polarity applied to the oxidizable electrode and negative polarity applied to the inert electrode which electrodeposits silver or copper across the gap closing the switch. Reversing the polarity of the switch dissolves the electrodeposited metal and returns it to the oxidizable electrode. A capacitor arrangement may be formed with the same structure and process.

  14. Nanoeletromechanical switch and logic circuits formed therefrom (United States)

    Nordquist, Christopher D [Albuquerque, NM; Czaplewski, David A [Albuquerque, NM


    A nanoelectromechanical (NEM) switch is formed on a substrate with a source electrode containing a suspended electrically-conductive beam which is anchored to the substrate at each end. This beam, which can be formed of ruthenium, bows laterally in response to a voltage applied between a pair of gate electrodes and the source electrode to form an electrical connection between the source electrode and a drain electrode located near a midpoint of the beam. Another pair of gate electrodes and another drain electrode can be located on an opposite side of the beam to allow for switching in an opposite direction. The NEM switch can be used to form digital logic circuits including NAND gates, NOR gates, programmable logic gates, and SRAM and DRAM memory cells which can be used in place of conventional CMOS circuits, or in combination therewith.

  15. Low voltage main distribution with redundant feeding; Niederspannungshauptverteilung mit redundanter Einspeisung

    Energy Technology Data Exchange (ETDEWEB)

    Schell, Michael [Rittal GmbH und Co. KG, Herborn (Germany). Produktmanagement Power Distribution; Koch, Hans-Robert [Rittal GmbH und Co. KG, Herborn (Germany). Presse- und Oeffentlichkeitsarbeit


    Low voltage switching stations for power plants must operate without interruption. Therefore, these switchgears often are built up redundantly. A lignite power plant in Central Europe commissioned the medium-sized company A+H Steuer- und Regeltechnik (Remscheid, Federal Republic of Germany) to build a low-voltage switching station in which the supply redundantly is realized by means of two transformers. The main feeders and the switching network place high demands on design, construction and installation. The complex requirements were fulfilled using the solution kit 'Ri4Power' and the engineering tool 'Power Engineering' from Rittal easily and quickly fulfilled.

  16. Calibration of Voltage Transformers and High- Voltage Capacitors at NIST (United States)

    Anderson, William E.


    The National Institute of Standards and Technology (NIST) calibration service for voltage transformers and high-voltage capacitors is described. The service for voltage transformers provides measurements of ratio correction factors and phase angles at primary voltages up to 170 kV and secondary voltages as low as 10 V at 60 Hz. Calibrations at frequencies from 50–400 Hz are available over a more limited voltage range. The service for high-voltage capacitors provides measurements of capacitance and dissipation factor at applied voltages ranging from 100 V to 170 kV at 60 Hz depending on the nominal capacitance. Calibrations over a reduced voltage range at other frequencies are also available. As in the case with voltage transformers, these voltage constraints are determined by the facilities at NIST. PMID:28053409

  17. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P


    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  18. Enhanced-Boost Z-Source Inverters With Alternate-Cascaded Switched- and Tapped-Inductor Cells

    DEFF Research Database (Denmark)

    Li, Ding; Loh, Poh Chiang; Zhu, Miao


    In this paper, a number of alternate-cascaded switched-inductor and tapped-inductor networks have been proposed for Z-source inverters. The resulting topologies have enhanced voltage-boost capability while retaining the usual voltage-buck flexibility of a conventional voltage-source inverter...

  19. On-chip High-Voltage Generator Design

    CERN Document Server

    Tanzawa, Toru


    This book describes high-voltage generator design with switched-capacitor multiplier techniques.  The author provides various design techniques for switched-capacitor on-chip high-voltage generators, including charge pump circuits, regulators, level shifters, references, and oscillators.  Readers will see these techniques applied to system design in order to address the challenge of how the on-chip high-voltage generator is designed for Flash memories, LCD drivers, and other semiconductor devices to optimize the entire circuit area and power efficiency with a low voltage supply, while minimizing the cost.   ·         Shows readers how to design charge pump circuits with lower voltage operation, higher power efficiency, and smaller circuit area; ·         Describes comprehensive circuits and systems design of on-chip high-voltage generators; ·         Covers all the component circuit blocks, including charge pumps, pump regulators, level shifters, oscillators, and references.

  20. Design, Implementation, Modeling, and Optimization of Next Generation Low-Voltage Power MOSFETs (United States)

    Yoo, Abraham

    In this thesis, next generation low-voltage integrated power semiconductor devices are proposed and analyzed in terms of device structure and layout optimization techniques. Both approaches strive to minimize the power consumption of the output stage in DC-DC converters. In the first part of this thesis, we present a low-voltage CMOS power transistor layout technique, implemented in a 0.25mum, 5 metal layer standard CMOS process. The hybrid waffle (HW) layout was designed to provide an effective trade-off between the width of diagonal source/drain metal and the active device area, allowing more effective optimization between switching and conduction losses. In comparison with conventional layout schemes, the HW layout exhibited a 30% reduction in overall on-resistance with 3.6 times smaller total gate charge for CMOS devices with a current rating of 1A. Integrated DC-DC buck converters using HW output stages were found to have higher efficiencies at switching frequencies beyond multi-MHz. In the second part of the thesis, we present a CMOS-compatible lateral superjunction FINFET (SJ-FINFET) on a SOI platform. One drawback associated with low-voltage SJ devices is that the on-resistance is not only strongly dependent on the drift doping concentration but also on the channel resistance as well. To resolve the issue, a SJ-FINFET structure consisting of a 3D trench gate and SJ drift region was developed to minimize both channel and drift resistances. Several prototype devices were fabricated in a 0.5mum CMOS compatible process with nine masking layers. In comparison with conventional SJ-LDMOSFETs, the fabricated SJ-FINFETs demonstrated approximately 30% improvement in Ron,sp. This is a positive indication that the SJ-FINFET can become a competitive power device for sub-100V rating applications.

  1. Megahertz high voltage pulse generator suitable for capacitive load (United States)

    Xu, Yu; Chen, Wei; Liang, Hao; Li, Yu-Huai; Liang, Fu-Tian; Shen, Qi; Liao, Sheng-Kai; Peng, Cheng-Zhi


    A high voltage pulse generator is presented to drive Pockels cell. The Pockels cell behaves like a capacitor which slows the rise/fall time of the pulse and restrains the repetition rate of the generator. To drive the Pockels cell applied in quantum communication system, it requires about 1 MHz repetition rate with the rise/fall time of the pulse less than 50 ns, adjustable amplitude up to 800 V and an adjustable duration. With the assistance of self-designed transformers, the circuits is simplified that a pair of high current radio frequency (RF) MOSFET drivers are employed to switch the power MOSFETs at a high speed, and the power MOSFETs shape the final output pulse with the requirements. From the tests, the generator can produce 800 V square pulses continously at 1 MHz rate with 46 ns in risetime and 31 ns in falltime when driving a 51 pF capacitive load. And the generator is now used to drive Pockels cell for encoding the polarization of photons.

  2. Megahertz high voltage pulse generator suitable for capacitive load

    Directory of Open Access Journals (Sweden)

    Yu Xu


    Full Text Available A high voltage pulse generator is presented to drive Pockels cell. The Pockels cell behaves like a capacitor which slows the rise/fall time of the pulse and restrains the repetition rate of the generator. To drive the Pockels cell applied in quantum communication system, it requires about 1 MHz repetition rate with the rise/fall time of the pulse less than 50 ns, adjustable amplitude up to 800 V and an adjustable duration. With the assistance of self-designed transformers, the circuits is simplified that a pair of high current radio frequency (RF MOSFET drivers are employed to switch the power MOSFETs at a high speed, and the power MOSFETs shape the final output pulse with the requirements. From the tests, the generator can produce 800 V square pulses continously at 1 MHz rate with 46 ns in risetime and 31 ns in falltime when driving a 51 pF capacitive load. And the generator is now used to drive Pockels cell for encoding the polarization of photons.

  3. Transmission line transformer for reliable and low-jitter triggering of a railgap switch. (United States)

    Verma, Rishi; Mishra, Ekansh; Sagar, Karuna; Meena, Manraj; Shyam, Anurag


    The performance of railgap switch critically relies upon multichannel breakdown between the extended electrodes (rails) in order to ensure distributed current transfer along electrode length and to minimize the switch inductance. The initiation of several simultaneous arc channels along the switch length depends on the gap triggering technique and on the rate at which the electric field changes within the gap. This paper presents design, construction, and output characteristics of a coaxial cable based three-stage transmission line transformer (TLT) that is capable of initiating multichannel breakdown in a high voltage, low inductance railgap switch. In each stage three identical lengths of URM67 coaxial cables have been used in parallel and they have been wounded in separate cassettes to enhance the isolation of the output of transformer from the input. The cascaded output impedance of TLT is ~50 Ω. Along with multi-channel formation over the complete length of electrode rails, significant reduction in jitter (≤2 ns) and conduction delay (≤60 ns) has been observed by the realization of large amplitude (~80 kV), high dV/dt (~6 kV/ns) pulse produced by the indigenously developed TLT based trigger generator. The superior performance of TLT over conventional pulse transformer for railgap triggering application has been compared and demonstrated experimentally.

  4. A High Isolation Series-Shunt RF MEMS Switch (United States)

    Yu, Yuan-Wei; Zhu, Jian; Jia, Shi-Xing; Shi, Yi


    This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 μs. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency (RF) performance demonstrates the validity of the electrical equivalent model. Measurements of the series-shunt switch indicate an outstanding isolation of more than 40 dB and a low insertion loss of 0.35 dB from DC to 12 GHz with total chip size of 1 mm × 1.2 mm. PMID:22408535

  5. A High Isolation Series-Shunt RF MEMS Switch

    Directory of Open Access Journals (Sweden)

    Yi Shi


    Full Text Available This paper presents a wide band compact high isolation microelectromechanical systems (MEMS switch implemented on a coplanar waveguide (CPW with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 µs. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency (RF performance demonstrates the validity of the electrical equivalent model. Measurements of the series-shunt switch indicate an outstanding isolation of more than 40 dB and a low insertion loss of 0.35 dB from DC to 12 GHz with total chip size of 1 mm × 1.2 mm.

  6. Three new DC-to-DC Single-Switch Converters


    Barry W. Williams; Mona Fouad Moussa


    This paper presents a new family of three previously unidentified dc-to-dc converters, buck, boost, and buck-boost voltage-transfer-function topologies, which offer advantageous transformer coupling features and low capacitor dc voltage stressing. The three single-switch, single-diode, converters offer the same features as basic dc-to-dc converters, such as the buck function with continuous output current and the boost function with continuous input current. Converter time-domain simulations ...

  7. A Comparison Study of Sinusoidal PWM and Space Vector PWM Techniques for Voltage Source Inverter

    Directory of Open Access Journals (Sweden)

    Ömer Türksoy


    Full Text Available In this paper, the methods used to control voltage source inverters which have been intensively investigated in recent years are compared. Although the most efficient result is obtained with the least number of switching elements in the inverter topologies, the method used in the switching is at least as effective as the topology. Besides, the selected switching method to control the inverter will play an effective role in suppressing harmonic components while producing the ideal output voltage. There are many derivatives of pulse width modulation techniques that are commonly used to control voltage source inverters. Some of widespread methods are sinusoidal pulse width modulation and space vector pulse width modulation techniques. These modulation techniques used for generating variable frequency and amplitude output voltage in voltage source inverters, have been simulated by using MATLAB/SIMULINK. And, the total harmonic distortions of the output voltages are compared. As a result of simulation studies, sinusoidal pulse width modulation has been found to have more total harmonic distortion in output voltages of voltage source inverters in the simulation. Space vector pulse width modulation has been shown to produce a more efficient output voltage with less total harmonic distortion.

  8. Controller Architectures for Switching

    DEFF Research Database (Denmark)

    Niemann, Hans Henrik; Poulsen, Niels Kjølstad


    This paper investigate different controller architectures in connection with controller switching. The controller switching is derived by using the Youla-Jabr-Bongiorno-Kucera (YJBK) parameterization. A number of different architectures for the implementation of the YJBK parameterization...... are described and applied in connection with controller switching. An architecture that does not include inversion of the coprime factors is introduced. This architecture will make controller switching particular simple....

  9. Constant Switching Frequency Self-Oscillating Controlled Class-D Amplifiers

    DEFF Research Database (Denmark)

    Nguyen-Duy, Khiem; Knott, Arnold; Andersen, Michael A. E.


    The self-oscillating control approach has been used extensively in class-D amplifiers. It has several advantages such as high bandwidth and high audio performance. However, one of the primary disadvantages in a self-oscillating controlled system is that the switching frequency of the amplifier...... varies with the ratio of the output voltage to the input rail voltage. In other words, the switching frequency varies with the duty cycle of the output. The drop in the frequency results in lower control bandwidth and higher output voltage ripple, which are undesirable. This paper proposes a new self......-oscillating control scheme that maintains a constant switching frequency over the full range of output voltage. The frequency difference is processed by a compensator whose output adjusts the total loop gain of the control system. It has been proven by simulation that a con-stant switching frequency self...

  10. Real-Time Implementation of a Fuzzy Logic Controller for DC-DC Switching Converters

    National Research Council Canada - National Science Library

    Rubaai, Ahmed


    This report presents a successful implementation of a fuzzy logic controller structure for dc-dc switching converters and evaluates experimentally its sensitivity for variable supply voltages and load...

  11. Perancangan Switch Matrik Besar Menggunakan Array Switch Analog Zarlink


    M. Zulfin


    Secara tradisional, perancangan sebuah switch matrik yang besar dilakukan dengan menggunakan switch-switch elektromekanik. Dengan demikian, banyak bagian yang bergerak yang digunakan untuk membangun switch matrik ini. Dengan kemajuan bidang elektronik, switch elektromekanik saat ini dapat digantikan dengan switch-switch semikonduktor yang ekivalen yang menawarkan solusi yang lebih ekonomis dan memiliki keandalan yang lebih baik. Rumpun switch crosspoint analog Zarlink dapat disusun dengan mud...

  12. Dwell-time switching

    NARCIS (Netherlands)

    Cao, Ming; Morse, A. Stephen

    Dwell-time switching is a logic for orchestrating the switching between controllers in a family of candidate controllers in order to control a process with a highly uncertain model. An analysis is given of dwell-time switching which is appropriate to a variety of control problems in which the class

  13. Novel Interleaved Converter with Extra-High Voltage Gain to Process Low-Voltage Renewable-Energy Generation

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen


    Full Text Available This paper presents a novel interleaved converter (NIC with extra-high voltage gain to process the power of low-voltage renewable-energy generators such as photovoltaic (PV panel, wind turbine, and fuel cells. The NIC can boost a low input voltage to a much higher voltage level to inject renewable energy to DC bus for grid applications. Since the NIC has two circuit branches in parallel at frond end to share input current, it is suitable for high power applications. In addition, the NIC is controlled in an interleaving pattern, which has the advantages that the NIC has lower input current ripple, and the frequency of the ripple is twice the switching frequency. Two coupled inductors and two switched capacitors are incorporated to achieve a much higher voltage gain than conventional high step-up converters. The proposed NIC has intrinsic features such as leakage energy totally recycling and low voltage stress on power semiconductor. Thorough theoretical analysis and key parameter design are presented in this paper. A prototype is built for practical measurements to validate the proposed NIC.

  14. A modified two-level three-phase quasi-soft-switching inverter

    DEFF Research Database (Denmark)

    Liu, Yusheng; Wu, Weimin; Blaabjerg, Frede


    A traditional Voltage Source Inverter (VSI) has higher efficiency than a Current Voltage Source (CSI) due to the less conduction power loss. However, the reverse recovery of the free-wheeling diode limits the efficiency improvement for the silicon devices based hard-switching VSI. The traditional...... quasi-soft-switching inverter can alternate between VSI and CSI by using a proper control scheme and thereby reduce the power losses caused by the reverse recovery of the free-wheeling diode. Nevertheless, slightly extra conduction power loss of the auxiliary switch is also introduced. In order...... to reduce the extra conduction power loss and the voltage stress across the DC-link capacitor, a modified two-level three-phase quasi-soft-switching inverter is proposed by using a SiC MOSFET instead of an IGBT. The principle of the modified two-level three-phase quasi-soft-switching inverter is analyzed...

  15. Analysis of the Degradation of MOSFETs in Switching Mode Power Supply by Characterizing Source Oscillator Signals


    Zheng, Xueyan; Wu, Lifeng; Guan, Yong; Li, Xiaojuan


    Switching Mode Power Supply (SMPS) has been widely applied in aeronautics, nuclear power, high-speed railways, and other areas related to national strategy and security. The degradation of MOSFET occupies a dominant position in the key factors affecting the reliability of SMPS. MOSFETs are used as low-voltage switches to regulate the DC voltage in SMPS. The studies have shown that die-attach degradation leads to an increase in on-state resistance due to its dependence on junction temperature....

  16. A new Zero-Current-Transition PWM switching cell

    Energy Technology Data Exchange (ETDEWEB)

    Grigore, V. [Electronics and Telecommunications Faculty, `Politechnica` University Bucharest (Romania); Kyyrae, J. [Helsinki University of Technology, Otaniemi (Finland): Institute of Intelligent Power Electronics


    In this paper a new Zero-Current-Transition (ZCT) PWM switching cell is presented. The proposed switching cell is composed of the normal hard-switched PWM cell (consisting of one active switch and one passive switch), plus as auxiliary circuit. The auxiliary circuit is inactive during the ON ad OFF intervals of the switches in the normal PWM switch. The transitions between the two states are controlled by the auxiliary circuit. Prior to turn-off, the current through the active switch in the PWM cell is forced to zero, thus the turn-off losses of the active switch are practically eliminated. At turn-on the auxiliary circuit slows down the growing rate of the current through the main switch. Thus, turn-on losses are also very much reduced. The active switch operates under ZCT conditions, the passive switch (diode) has a controlled reverse recovery, while the switch in the auxiliary circuit operates under Zero-Current-Switching (ZCS) conditions. (orig.) 3 refs.

  17. Low Temperature Resistive Switching Behavior in a Manganite (United States)

    Salvo, Christopher; Lopez, Melinda; Tsui, Stephen


    The development of new nonvolatile memory devices remains an important field of consumer electronics. A possible candidate is bipolar resistive switching, a method by which the resistance of a material changes when a voltage is applied. Although there is a great deal of research on this topic, not much has been done at low temperatures. In this work, we compare the room temperature and low temperature behaviors of switching in a manganite thin film. The data indicates that the switching is suppressed upon cooling to cryogenic temperatures, and the presence of crystalline charge traps is tied to the physical mechanism.

  18. High Voltage Application of Explosively Formed Fuses

    Energy Technology Data Exchange (ETDEWEB)

    Tasker, D.G.; Goforth, J.H.; Fowler, C.M.; Lopez, E.M.; Oona, H.; Marsh, S.P.; King, J.C.; Herrera, D.H.; Torres, D.T.; Sena, F.C.; Martinez, E.C.; Reinovsky, R.E.; Stokes, J.L.; Tabaka, L.J.; Kiuttu, G.; Degnan, J.


    At Los Alamos, the authors have primarily applied Explosively Formed Fuse (EFF) techniques to high current systems. In these systems, the EFF has interrupted currents from 19 to 25 MA, thus diverting the current to low inductance loads. The magnitude of transferred current is determined by the ratio of storage inductance to load inductance, and with dynamic loads, the current has ranged from 12 to 20 MA. In a system with 18 MJ stored energy, the switch operates at a power up to 6 TW. The authors are now investigating the use of the EFF technique to apply high voltages to high impedance loads in systems that are more compact. In these systems, they are exploring circuits with EFF lengths from 43 to 100 cm, which have storage inductances large enough to apply 300 to 500 kV across high impedance loads. Experimental results and design considerations are presented. Using cylindrical EFF switches of 10 cm diameter and 43 cm length, currents of approximately 3 MA were interrupted producing {approximately}200 kV. This indicate s the switch had an effective resistance of {approximately}100 m{Omega} where 150--200 m{Omega} was expected. To understand the lower performance, several parameters were studied, including: electrical conduction through the explosive products; current density; explosive initiation; insulator type; conductor thickness; and so on. The results show a number of interesting features, most notably that the primary mechanism of switch operation is mechanical and not electrical fusing of the conductor. Switches opening on a 10 to 10 {micro}s time scale with resistances starting at 50 {micro}{Omega} and increasing to perhaps 1 {Omega} now seem possible to construct, using explosive charges as small as a few pounds.

  19. Cascode-based voltage-amplifier stage

    Directory of Open Access Journals (Sweden)

    Pospisilik Martin


    Full Text Available Voltage-amplifier stages are the basic components of commonly used high gain amplifiers the bias and other parameters of whose are set by the external negative feedback. The typical device that uses the voltage-amplifier stage is the operational amplifier. Similar constructions can also be created on the basis of discrete transistors. From the circuit designer’s point of view, the voltage-amplifier stage defines the crucial parameters of the whole unit - the amplification factor, dominant pole of its transfer function and the slew rate. In this paper the proposal on construction of the voltage-amplifier stage based on discrete transistors is described. When connected between the input differential amplifier and the output stage, it allows creating of cheap amplifier for HiFi applications with considerable performance.

  20. Multiuser switched diversity scheduling schemes

    KAUST Repository

    Shaqfeh, Mohammad


    Multiuser switched-diversity scheduling schemes were recently proposed in order to overcome the heavy feedback requirements of conventional opportunistic scheduling schemes by applying a threshold-based, distributed, and ordered scheduling mechanism. The main idea behind these schemes is that slight reduction in the prospected multiuser diversity gains is an acceptable trade-off for great savings in terms of required channel-state-information feedback messages. In this work, we characterize the achievable rate region of multiuser switched diversity systems and compare it with the rate region of full feedback multiuser diversity systems. We propose also a novel proportional fair multiuser switched-based scheduling scheme and we demonstrate that it can be optimized using a practical and distributed method to obtain the feedback thresholds. We finally demonstrate by numerical examples that switched-diversity scheduling schemes operate within 0.3 bits/sec/Hz from the ultimate network capacity of full feedback systems in Rayleigh fading conditions. © 2012 IEEE.

  1. Dynamic optimum dead time in piezoelectric transformer-based switch-mode power supplies

    DEFF Research Database (Denmark)

    Ekhtiari, Marzieh; Andersen, Thomas; Andersen, Michael A. E.


    Soft switching is required to attain high efficiency in high-frequency power converters. Piezoelectric transformerbased converters can benefit from soft switching in terms of significantly diminished switching losses and stresses. Adequate dead time is needed in order to deliver sufficient energy...... to charge and discharge the input capacitance of piezoelectric transformers in order to achieve zero-voltage switching. This paper proposes a method for detecting the optimum dead time in piezoelectric transformer-based switch-mode power supplies. The provision of sufficient dead time in every cycle...

  2. Voltage-dependent gating of hERG potassium channels

    Directory of Open Access Journals (Sweden)

    Yen May eCheng


    Full Text Available The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4-S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-a-go-go related gene, hERG, which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure-function relationships underlying voltage-dependent gating in Shaker and hERG channels, with a focus on the roles of the voltage sensing domain and the S4-S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter charge interactions. More recent data suggest that key amino acid differences in the hERG voltage sensing unit and S4-S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor.

  3. Single Switch Nonisolated Ultra-Step-Up DC-DC Converter with an Integrated Coupled Inductor for High Boost Applications

    DEFF Research Database (Denmark)

    Siwakoti, Yam P.; Blaabjerg, Frede


    This paper introduces a new single-switch nonisolated dc-dc converter with very high voltage gain and reduced semiconductor voltage stress. The converter utilizes an integrated autotransformer and a coupled inductor on the same core in order to achieve a very high voltage gain without using extreme...... duty cycle. Furthermore, a passive lossless clamp circuit recycles the leakage energy of the coupled magnetics and alleviates the voltage spikes across the main switch. This feature along with low stress on the switching device enables the designer to use a low voltage and low RDS-on MOSFET, which...... reduces cost, as well as conduction and turn on losses of the switch. The principle of operation, theoretical analysis, and comparison supported by some key simulation and experimental results of a 500 W prototype are presented....

  4. Resistance switching memories are memristors (United States)

    Chua, Leon


    All 2-terminal non-volatile memory devices based on resistance switching are memristors, regardless of the device material and physical operating mechanisms. They all exhibit a distinctive "fingerprint" characterized by a pinched hysteresis loop confined to the first and the third quadrants of the v- i plane whose contour shape in general changes with both the amplitude and frequency of any periodic "sine-wave-like" input voltage source, or current source. In particular, the pinched hysteresis loop shrinks and tends to a straight line as frequency increases. Though numerous examples of voltage vs. current pinched hysteresis loops have been published in many unrelated fields, such as biology, chemistry, physics, etc., and observed from many unrelated phenomena, such as gas discharge arcs, mercury lamps, power conversion devices, earthquake conductance variations, etc., we restrict our examples in this tutorial to solid-state and/or nano devices where copious examples of published pinched hysteresis loops abound. In particular, we sampled arbitrarily, one example from each year between the years 2000 and 2010, to demonstrate that the memristor is a device that does not depend on any particular material, or physical mechanism. For example, we have shown that spin-transfer magnetic tunnel junctions are examples of memristors. We have also demonstrated that both bipolar and unipolar resistance switching devices are memristors. The goal of this tutorial is to introduce some fundamental circuit-theoretic concepts and properties of the memristor that are relevant to the analysis and design of non-volatile nano memories where binary bits are stored as resistances manifested by the memristor's continuum of equilibrium states. Simple pedagogical examples will be used to illustrate, clarify, and demystify various misconceptions among the uninitiated.

  5. Switching speed limitations of high power IGBT modules

    DEFF Research Database (Denmark)

    Incau, Bogdan Ioan; Trintis, Ionut; Munk-Nielsen, Stig


    In this paper the switching speed limits of high power IGBT modules are investigated. The limitation of turn-on and turn-off switching speeds of the IGBTs are experimentally detected in a pulse tester. Different dc-bus stray inductances are considered, as well as the worst case scenario for the b......In this paper the switching speed limits of high power IGBT modules are investigated. The limitation of turn-on and turn-off switching speeds of the IGBTs are experimentally detected in a pulse tester. Different dc-bus stray inductances are considered, as well as the worst case scenario...... for the blocking dc-link voltage. Switching losses are analyzed upon a considerable variation of resistor value from turn-on gate driver side. Short circuit operations are investigated along with safe operating area for entire module to validate electrical capabilities under extreme conditions....

  6. A Single-Stage LED Tube Lamp Driver with Power-Factor Corrections and Soft Switching for Energy-Saving Indoor Lighting Applications

    Directory of Open Access Journals (Sweden)

    Chun-An Cheng


    Full Text Available This paper presents a single-stage alternating current (AC/direct current (DC light-emitting diode (LED tube lamp driver for energy-saving indoor lighting applications; this driver features power-factor corrections and soft switching, and also integrates a dual buck-boost converter with coupled inductors and a half-bridge series resonant converter cascaded with a bridge rectifier into a single-stage power-conversion topology. The features of the presented driver are high efficiency (>91%, satisfying power factor (PF > 0.96, low input-current total-harmonic distortion (THD < 10%, low output voltage ripple factor (<7.5%, low output current ripple factor (<8%, and zero-voltage switching (ZVS obtained on both power switches. Operational principles are described in detail, and experimental results obtained from an 18 W-rated LED tube lamp for T8/T10 fluorescent lamp replacements with input utility-line voltages ranging from 100 V to 120 V have demonstrated the functionality of the presented driver suitable for indoor lighting applications.

  7. Arduino Based RFID Line Switching Using SSR

    Directory of Open Access Journals (Sweden)

    Michael E.


    Full Text Available The importance of line switching cannot be overemphasized as they are used to connect and disconnect substations to and from a distribution grid. At the cradle of technology line switching was achieved via the use of manual switches or fuses which could endanger life as a result of electrocution when expose during maintenance. This ill prompted the development of automated line switching using relays and contactors. With time this tends to fail as a result of wearing of the contact which is as a result of arcing and low voltage. To avert all these ills this paper presents Arduino based Radio Frequency Identification RFID line switching using Solid State Relay SSR. This is to ensure the safety of operators or technologist and to also avert the problem associated with relays and contactors using SSR. This was achieved using RFID RC-522 reader ardriuno Uno SSR and other discrete components. The system was tested and worked perfectly reducing the risk of electrocution and eliminating damage wearing of the contacts common with contactors and relays.

  8. Neural correlates for task switching in the macaque superior colliculus. (United States)

    Chan, Jason L; Koval, Michael J; Johnston, Kevin; Everling, Stefan


    Successful task switching requires a network of brain areas to select, maintain, implement, and execute the appropriate task. Although frontoparietal brain areas are thought to play a critical role in task switching by selecting and encoding task rules and exerting top-down control, how brain areas closer to the execution of tasks participate in task switching is unclear. The superior colliculus (SC) integrates information from various brain areas to generate saccades and is likely influenced by task switching. Here, we investigated switch costs in nonhuman primates and their neural correlates in the activity of SC saccade-related neurons in monkeys performing cued, randomly interleaved pro- and anti-saccade trials. We predicted that behavioral switch costs would be associated with differential modulations of SC activity in trials on which the task was switched vs. repeated, with activity on the current trial resembling that associated with the task set of the previous trial when a switch occurred. We observed both error rate and reaction time switch costs and changes in the discharge rate and timing of activity in SC neurons between switch and repeat trials. These changes were present later in the task only after fixation on the cue stimuli but before saccade onset. These results further establish switch costs in macaque monkeys and suggest that SC activity is modulated by task-switching processes in a manner inconsistent with the concept of task set inertia.NEW & NOTEWORTHY Task-switching behavior and superior colliculus (SC) activity were investigated in nonhuman primates performing randomly interleaved pro- and anti-saccade tasks. Here, we report error rate and reaction time switch costs in macaque monkeys and associated differences in stimulus-related activity of saccade-related neurons in the SC. These results provide a neural correlate for task switching and suggest that the SC is modulated by task-switching processes and may reflect the completion of task

  9. Low start-up voltage dc–dc converter with negative voltage control for thermoelectric energy harvesting

    Directory of Open Access Journals (Sweden)

    Pui-Sun Lei


    Full Text Available This Letter presents a low start-up voltage dc–dc converter for low-power thermoelectric systems which uses a native n-type MOS transistor as the start-up switch. The start-up voltage of the proposed converter is 300 mV and the converter does not need batteries to start up. The negative voltage control is proposed to reduce the leakage current caused by native n-type transistor and increase the efficiency. The proposed converter was designed using standard 0.18 µm CMOS process with chip size of 0.388 mm^2. The peak efficiency is 63% at load current of 1.5 mA. The proposed converter provides output voltage >1 V at maximum load current of 3.2 mA.

  10. An optically controlled optoelectronic switch: From theory to 50 gigahertz burst-logic demonstration (United States)

    Yairi, Micah Baruch

    For high-speed communication, it is essential to multiplex, demultiplex, and switch individual data bits at very rapid rates. Similarly, in wavelength division multiplexed (WDM) systems the ability to change wavelengths dramatically increases the potential connectivity of such transmission systems. This dissertation presents work on a unique optically controlled optical gate that is capable of both high speed optical gating and wavelength conversion. The optically controlled optical gates (OCOG) described herein alter the reflection of a surface-normal pulse of light in response to the presence or absence of a control light pulse. Low-power operation is achieved by creating large changes in the electric field due to separation of photogenerated electrons and holes combined with the strong voltage sensitivity of the absorption of multiple quantum well structures in a p-i-n diode due to the quantum confined Stark effect. The recovery mechanism used in these devices is based on diffusive conduction, a novel optoelectronic behavior that enables fast gating. In essence, the localized voltage change that builds up in the vicinity of the incident light pulse relaxes in an analogous manner to a voltage pulse in a two-dimensional dissipative transmission line. This recovery is a local effect and can, therefore, be made fast---on the order of picoseconds; it is not constrained by the overall RC time constant of the device. With proper design, multiple insulating and conducting layers within a device may be used to modify the voltage relaxation process, further enhancing OCOG switching speed. Three generations of optically controlled quantum well optical gates were investigated. For each generation, both the theory of operation and experimental results are presented. Our multi-layered dual-diode device exhibits a 7 ps FWHM switching time that requires a switching energy of only 40 fJ/mum2. This device has also demonstrated burst-logic operation at 50 GHz. These optically

  11. Observation of dark pulses in 10 nm thick YBCO nanostrips presenting hysteretic current voltage characteristics (United States)

    Ejrnaes, M.; Parlato, L.; Arpaia, R.; Bauch, T.; Lombardi, F.; Cristiano, R.; Tafuri, F.; Pepe, G. P.


    We have fabricated several 10 nm thick and 65 nm wide YBa2Cu3O7‑δ (YBCO) nanostrips. The nanostrips with the highest critical current densities are characterized by hysteretic current voltage characteristics (IVCs) with a direct bistable switch from the zero-voltage to the finite voltage state. The presence of hysteretic IVCs allowed the observation of dark pulses due to fluctuations phenomena. The key role of the bistable behavior is its ability to transform a small disturbance (e.g. an intrinsic fluctuation) into a measurable transient signal, i.e. a dark pulse. On the contrary, in devices characterized by lower critical current density values, the IVCs are non-hysteretic and dark pulses have not been observed. To investigate the physical origin of the dark pulses, we have measured the bias current dependence of the dark pulse rate: the observed exponential increase with the bias current is compatible with mechanisms based on thermal activation of magnetic vortices in the nanostrip. We believe that the successful amplification of small fluctuation events into measurable signals in nanostrips of ultrathin YBCO is a milestone for further investigation of YBCO nanostrips for superconducting nanostrip single photon detectors and other quantum detectors for operation at higher temperatures.

  12. Design and development of a 5 kV isolated solid state switch (United States)

    Holbrook, R. J.; Scapple, R. Y.; Keister, F. Z.; Gooder, S. T.


    A unique microcircuit intended for use as a shorting switch for large extraterrestrial solar cell arrays is described. The packaging design for the 5 kV isolated hybrid switch is different from most hybrid microcircuits in that it utilizes a compartmentalized plastic case (a portion of which is encapsulated), is not hermetic, and is designed for high voltage operation.

  13. Studies on nonvolatile resistance memory switching in ZnO thin films

    Indian Academy of Sciences (India)

    Reliable and repeated switching of the resistance of ZnO thin films was obtained between two well defined states of high and low resistance with a narrow dispersion and small switching voltages. Resistance ratios of the high resistance state to low resistance state were found to be in the range of 2–5 orders of magnitude ...

  14. Implementation of Single Phase Soft Switched PFC Converter for Plug-in-Hybrid Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Aiswariya Sekar


    Full Text Available This paper presents a new soft switching boost converter with a passive snubber cell without additional active switches for battery charging systems. The proposed snubber finds its application in the front-end ac-dc converter of Plug-in Hybrid Electric Vehicle (PHEV battery chargers. The proposed auxiliary snubber circuit consists of an inductor, two capacitors and two diodes. The new converter has the advantages of continuous input current, low switching stresses, high voltage gain without extreme duty cycle, minimized charger size and charging time and fewer amounts of cost and electricity drawn from the utility at higher switching frequencies. The switch is made to turn ON by Zero Current Switching (ZCS and turn OFF by Zero Voltage Switching (ZVS. The detailed steady state analysis of the novel ac-dc Zero Current- Zero Voltage Switching (ZC-ZVS boost Power Factor Correction (PFC converter is presented with its operating principle. The experimental prototype of 20 kHz, 100 W converter verifies the theoretical analysis. The power factor of the prototype circuit reaches near unity with an efficiency of 97%, at nominal output power for a ±10% variation in the input voltage and ±20% variation in the snubber component values.

  15. On-chip high-voltage generator design design methodology for charge pumps

    CERN Document Server

    Tanzawa, Toru


    This book provides various design techniques for switched-capacitor on-chip high-voltage generators, including charge pump circuits, regulators, level shifters, references, and oscillators.  Readers will see these techniques applied to system design in order to address the challenge of how the on-chip high-voltage generator is designed for Flash memories, LCD drivers, and other semiconductor devices to optimize the entire circuit area and power efficiency with a low voltage supply, while minimizing the cost.  This new edition includes a variety of useful updates, including coverage of power efficiency and comprehensive optimization methodologies for DC-DC voltage multipliers, modeling of extremely low voltage Dickson charge pumps, and modeling and optimum design of AC-DC switched-capacitor multipliers for energy harvesting and power transfer for RFID.

  16. Evaluation Methods of Contamination Flashover Voltage Performance of Cylindrical Type Semi-conducting Glaze Porcelain Insulators (United States)

    Yamada, Kazuma; Hayashi, Akio; Saka, Chiharu; Sakanishi, Kenji; Matsuoka, Ryosuke; Ito, Susumu; Fujii, Osamu

    Higher contamination flashover voltage of a semi-conducting glaze (SG) insulator owes primarily to the drying effect by leakage current flowing in the glaze. Significant reduction in contamination flashover voltage was confirmed on a cylindrical SG insulator when fog density was increased from 0.5g/m3 to 13g/m3 in clean fog test. The effect of de-energized duration between trip-out and re-energization on the contamination flashover voltage of a cylindrical SG insulator under cold-wet switch-on conditions was investigated. As the de-energized duration becomes shorter, the flashover voltage of a cylindrical SG insulator becomes higher. Higher contamination design voltages may be adopted even under cold-wet switch-on conditions.

  17. Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar


    problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0.......Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage...

  18. Emergence of phenotype switching through continuous and discontinuous evolutionary transitions (United States)

    Patra, Pintu; Klumpp, Stefan


    Bacterial persistence (phenotypic tolerance to antibiotics) provides a prime example of bet-hedging, where normally growing cells generate slow-growing but antibiotic-tolerant persister cells to survive through periods of exposure to antibiotics. The population dynamics of persistence is explained by a phenotype switching mechanism that allows individual cells to switch between these different cellular states with different environmental sensitivities. Here, we perform a theoretical study based on an exact solution for the case of a periodic variation of the environment to address how phenotype switching emerges and under what conditions switching is or is not beneficial for long-time growth. Specifically we report a bifurcation through which a fitness maximum and minimum emerge above a threshold in the duration of exposure to the antibiotic. Only above this threshold, the optimal phenotype switching rates are adjusted to the time scales of the environment, as emphasized by previous theoretical studies, while below the threshold a non-switching population is fitter than a switching one. The bifurcation can be of different type, depending on how the phenotype switching rates are allowed to vary. If the switching rates for both directions of the switch are coupled, the transition is discontinuous and results in evolutionary hysteresis, which we confirm with a stochastic simulation. If the switching rates vary individually, a continuous transition is obtained and no hysteresis is found. We discuss how both scenarios can be linked to changes in the underlying molecular networks.

  19. Characteristics of output voltage and current of integrated nanogenerators

    KAUST Repository

    Yang, Rusen


    Owing to the anisotropic property and small output signals of the piezoelectric nanogenerators (NGs) and the influence of the measurement system and environment, identification of the true signal generated by the NG is critical. We have developed three criteria: Schottky behavior test, switching-polarity tests, and linear superposition of current and voltage tests. The 11 tests can effectively rule out the system artifacts, whose sign does not change with the switching measurement polarity, and random signals, which might change signs but cannot consistently add up or cancel out under designed connection configurations. This study establishes the standards for designing and scale up of integrated nanogenerators. © 2009 American Institute of Physics.

  20. Light-weight DC to very high voltage DC converter (United States)

    Druce, R.L.; Kirbie, H.C.; Newton, M.A.


    A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current. 1 fig.

  1. Using a Voltage Domain Programmable Technique for Low-Power Management Cell-Based Design

    Directory of Open Access Journals (Sweden)

    Ching-Hwa Cheng


    Full Text Available The Multi-voltage technique is an effective way to reduce power consumption. In the proposed cell-based voltage domain programmable (VDP technique, the high and low voltages applied to logic gates are programmable. The flexible voltage domain reassignment allows the chip performance and power consumption to be dynamically adjusted. In the proposed technique, the power switches possess the feature of flexible programming after chip manufacturing. This VDP method does not use an external voltage regulator to regulate the supply voltage level from outside of the chip but can be easily integrated within the design. This novel technique is proven by use of a video decoder test chip, which shows 55% and 61% power reductions compared to conventional single-Vdd and low-voltage designs, respectively. This power-aware performance adjusting mechanism shows great power reduction with a good power-performance management mechanism.

  2. High-Voltage Converter for the Traction Application

    Directory of Open Access Journals (Sweden)

    Sergey Volskiy


    Full Text Available High-voltage converter employing IGCT switches (VDC=2800 V for traction application is presented. Such a power traction drive operates with an unstable input voltage over 2000⋯4000 V DC and with an output power up to 1200 kW. The original power circuit of the high-voltage converter is demonstrated. Development of the attractive approach to designing the low-loss snubber circuits of the high-frequency IGCT switches is proposed. It is established on the complex multilevel analysis of the transient phenomena and power losses. The essential characteristics of the critical parameters under transient modes and the relation between the snubber circuit parameters and the losses are discussed. Experimental results for the prototype demonstrate the properties of new power circuit. The test results confirm the proposed high-voltage converter performance capability as well as verifying the suitability of the conception for its use in the Russian suburban train power system and other high-voltage applications.

  3. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar


    . The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbalances, for the tested cases in the CIGRE LV test network are mainly due to single phase loads and due...... to unbalanced faults. The compensation of unbalanced voltage sags and voltage unbalance in the CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0.......Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system...

  4. Spring-constant measurement methods for RF-MEMS capacitive switches

    NARCIS (Netherlands)

    Wang, J.; Bielen, Jeroen; Salm, Cora; Schmitz, Jurriaan


    In this article we compare three approaches to measure the spring constant in RF MEMS capacitive switches. We use the lowest vibration mode, as obtained from vibrometry; the pull-in voltage; and the low-field capacitance-voltage curve of the device to extract the spring constant. Experimental

  5. A Framework for Model-Based Diagnostics and Prognostics of Switched-Mode Power Supplies (United States)


    consumption, MOSFET voltage, diode reverse voltage, and 47K resistance consumption. ANNUAL CONFERENCE OF THE PROGNOSTICS AND HEALTH MANAGEMENT...methodology based on an equivalent circuit system simulation model developed from a commercially available switch-mode power supply, and empirical...of an integrated simulation model combining two empirical models in the application of SMPS: a circuit -based SMPS simulation model and the

  6. Parallel and series 4 switch Z-source converters in induction motor drives

    DEFF Research Database (Denmark)

    Baba, Mircea; Lascu, Cristian; Boldea, Ion


    This paper presents a control strategy for four switch three-phase Z-source Inverter with parallel and series Z-source network fed 0.5 kW induction motor drive with V/f control and the algorithm to control the dc boost, split capacitor voltage balance and the ac output voltage. The proposed control...

  7. Switching Angles Determination Using Genetic Algorithm for Two-Level SHEPWM Inverter


    DENİZ, Erkan


    Selective Harmonic Elimination pulse width modulation (SHEPWM technique) requires the determination of optimum switching angles by solving the nonlinear equation set and a look-up table stored the switching times in a real-time application. In this paper, an 11-angle SHEPWM algorithm is presented to eliminate low-order harmonics from line-to-neutral voltage waveform of three-phase two-level inverter. The nonlinear equations set which are functions of the switching angles obtained from the Fou...

  8. Stability of Triggering of the Switch with Sharply Non-Uniform Electric Field at the Electrode with Negative Potential (United States)

    Kovalchuk, B. M.; Zherlitsyn, A. A.; Kumpyak, E. V.


    Results of investigations into a two-electrode high-pressure gas switch with sharply non-uniform field at the electrode with negative potential operating in the self-breakdown regime with pulsed charging of a highvoltage capacitive energy storage for 100 μs to voltage exceeding 200 kV are presented. It is demonstrated that depending on the air pressure and the gap length, the corona-streamer discharge, whose current increases with voltage, arises in the switch at a voltage of 0.2-0.3 of the self-breakdown voltage. At the moment of switch self-breakdown, the corona-streamer discharge goes over to one or several spark channels. The standard deviation of the triggering moment can be within 1.5 μs, which corresponds to the standard deviation of the self-breakdown voltage less than 2 kV. The voltage stability can be better than 1.5%.

  9. A Microcontroller-Based Automatic Transfer Switching System for a ...

    African Journals Online (AJOL)

    This paper presents a Microcontroller-Based Automatic Transfer Switching System (MBATSS), which eliminates the challenges of a manual changeover system. A voltage sensing circuit, a Hall Effect current sensor, relays, LEDs and an LCD were all coordinated using a PIC16F877A microcontroller. A system flow chart was ...

  10. Geomagnetism and Induced Voltage (United States)

    Abdul-Razzaq, W.; Biller, R. D.


    Introductory physics laboratories have seen an influx of "conceptual integrated science" over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it…

  11. High Lithium Insertion Voltage Single-Crystal H2 Ti12 O25 Nanorods as a High-Capacity and High-Rate Lithium-Ion Battery Anode Material. (United States)

    Guo, Qiang; Chen, Li; Shan, Zizhao; Lee, Wee Siang Vincent; Xiao, Wen; Liu, Zhifang; Liang, Jingjing; Yang, Gaoli; Xue, Junmin


    H2 Ti12 O25 holds great promise as a high-voltage anode material for advanced lithium-ion battery applications. To enhance its electrochemical performance, control of the crystal orientation and morphology is an effective way to cope with slow Li+ -ion diffusion inside H2 Ti12 O25 with severe anisotropy. In this report, Na2 Ti6 O13 nanorods, prepared from Na2 CO3 and anatase TiO2 in molten NaCl medium, were used as a precursor in the synthesis of long single-crystal H2 Ti12 O25 nanorods with reactive facets. The as-prepared H2 Ti12 O25 nanorods with a diameter of 100-200 nm showed higher charge (extraction) specific capacity and better rate performance than previously reported systems. The reversible capacity of H2 Ti12 O25 was 219.8 mAh g-1 at 1C after 100 cycles, 172.1 mAh g-1 at 10C, and 144.4 mAh g-1 at 20C after 200 cycles; these values are higher than those of H2 Ti12 O25 prepared by the conventional soft-chemical method. Moreover, the as-prepared H2 Ti12 O25 nanorods exhibited superior cycle stability with more than 94 % retention of capacity with nearly 100 % coulombic efficiency after 100 cycles at 1C. On the basis of the above results, long single-crystal H2 Ti12 O25 nanorods synthesized in molten NaCl with outstanding electrochemical characteristics hold a significant amount of promise for hybrid electric vehicles and energy-storage systems. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. The research of high voltage switchgear detecting unit (United States)

    Ji, Tong; Xie, Wei; Wang, Xiaoqing; Zhang, Jinbo


    In order to understand the status of the high voltage switch in the whole life circle, you must monitor the mechanical and electrical parameters that affect device health. So this paper gives a new high voltage switchgear detecting unit based on ARM technology. It can measure closing-opening mechanical wave, storage motor current wave and contactor temperature to judge the device’s health status. When something goes wrong, it can be on alert and give some advice. The practice showed that it can meet the requirements of circuit breaker mechanical properties temperature online detection.

  13. Grid Voltage Modulated Control of Grid-Connected Voltage Source Inverters under Unbalanced Grid Conditions

    DEFF Research Database (Denmark)

    Li, Mingshen; Gui, Yonghao; Quintero, Juan Carlos Vasquez


    In this paper, an improved grid voltage modulated control (GVM) with power compensation is proposed for grid-connected voltage inverters when the grid voltage is unbalanced. The objective of the proposed control is to remove the power ripple and to improve current quality. Three power compensation...... objectives are selected to eliminate the negative sequence components of currents. The modified GVM method is designed to obtain two separate second-order systems for not only the fast convergence rate of the instantaneous active and reactive powers but also the robust performance. In addition, this method...

  14. Voltage-Dependent Gating of hERG Potassium Channels (United States)

    Cheng, Yen May; Claydon, Tom W.


    The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv) channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4–S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-à-go-go related gene, hERG), which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure–function relationships underlying activation and deactivation gating in Shaker and hERG channels, with a focus on the roles of the voltage-sensing domain and the S4–S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter-charge interactions. More recent data suggest that key amino acid differences in the hERG voltage-sensing unit and S4–S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor. PMID:22586397

  15. Saturated Switching Systems

    CERN Document Server

    Benzaouia, Abdellah


    Saturated Switching Systems treats the problem of actuator saturation, inherent in all dynamical systems by using two approaches: positive invariance in which the controller is designed to work within a region of non-saturating linear behaviour; and saturation technique which allows saturation but guarantees asymptotic stability. The results obtained are extended from the linear systems in which they were first developed to switching systems with uncertainties, 2D switching systems, switching systems with Markovian jumping and switching systems of the Takagi-Sugeno type. The text represents a thoroughly referenced distillation of results obtained in this field during the last decade. The selected tool for analysis and design of stabilizing controllers is based on multiple Lyapunov functions and linear matrix inequalities. All the results are illustrated with numerical examples and figures many of them being modelled using MATLAB®. Saturated Switching Systems will be of interest to academic researchers in con...

  16. Introduction to Optical Burst Switching


    KERNÁCS János; Szilágyi, Szabolcs


    Optical Burst Switching (OBS) isconsidered a popular switching paradigm for therealization of all-optical networks due to the balance itoffers between the coarse-grained Optical CircuitSwitching (OSC) and fine-grained Optical PacketSwitching (OPS). Given that the data are switched allopticallyat the burst level, Optical Burst Switchingcombines the transparency of Optical CircuitSwitching with the benefits of statistical multiplexingin Optical Packet Switching.


    Directory of Open Access Journals (Sweden)

    S. C. LIM


    Full Text Available Backfill materials like Bentonite and cement are effective in lowering grounding resistance of electrodes for a considerable period. During lightning, switching impulses and earth fault occurrences in medium and high voltage networks, the grounding system needs to handle extremely high currents either for a short duration or prolonged period respectively. This paper investigates the behaviour of bentonite, cement and sand under impulse and alternating high voltage (50Hz conditions. Fulguritic-formation was observed in all materials under alternating high voltage. The findings reveal that performance of grounding systems under high voltage conditions may significantly change from the outcomes anticipated at design stage.

  18. FreeSWITCH Cookbook

    CERN Document Server

    Minessale, Anthony


    This is a problem-solution approach to take your FreeSWITCH skills to the next level, where everything is explained in a practical way. If you are a system administrator, hobbyist, or someone who uses FreeSWITCH on a regular basis, this book is for you. Whether you are a FreeSWITCH expert or just getting started, this book will take your skills to the next level.

  19. Adaptive Optical Burst Switching


    Bonald, Thomas; Indre, Raluca-Maria; Oueslati, Sara


    International audience; We propose a modified version of Optical Burst Switching (OBS) that adapts the size of switched data units to the network load. Specifically, we propose a two-way reservation OBS scheme in which every active source-destination pair attempts to reserve a lightpath and for every successful reservation, transmits an optical burst whose size is proportional to the number of active data flows. We refer to this technique as Adaptive Optical Burst Switching. We prove that the...

  20. On the transient dynamics of piezoelectric-based, state-switched systems (United States)

    Lopp, Garrett K.; Kelley, Christopher R.; Kauffman, Jeffrey L.


    This letter reports on the induced mechanical transients for piezoelectric-based, state-switching approaches utilizing both experimental tests and a numerical model that more accurately captures the dynamics associated with a switch between stiffness states. Currently, switching models instantaneously dissipate the stored piezoelectric voltage, resulting in a discrete change in effective stiffness states and a discontinuity in the system dynamics during the switching event. The proposed model allows for a rapid but continuous voltage dissipation and the corresponding variation between stiffness states, as one sees in physical implementations. This rapid variation in system stiffness when switching at a point of non-zero strain leads to high-frequency, large-amplitude transients in the system acceleration response. Utilizing a fundamental piezoelectric bimorph, a comparison between the numerical and experimental results reveals that these mechanical transients are much stronger than originally anticipated and masked by measurement hardware limitations, thus highlighting the significance of an appropriate system model governing the switch dynamics. Such a model enables designers to analyze systems that incorporate piezoelectric-based state switching with greater accuracy to ensure that these transients do not degrade the intended performance. Finally, if the switching does create unacceptable transients, controlling the duration of voltage dissipation enables control over the frequency content and peak amplitudes associated with the switch-induced acceleration transients.

  1. Design and Implementation of a High-Voltage Generator with Output Voltage Control for Vehicle ER Shock-Absorber Applications

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen


    Full Text Available A self-oscillating high-voltage generator is proposed to supply voltage for a suspension system in order to control the damping force of an electrorheological (ER fluid shock absorber. By controlling the output voltage level of the generator, the damping force in the ER fluid shock absorber can be adjusted immediately. The shock absorber is part of the suspension system. The high-voltage generator drives a power transistor based on self-excited oscillation, which converts dc to ac. A high-frequency transformer with high turns ratio is used to increase the voltage. In addition, the system uses the car battery as dc power supply. By regulating the duty cycle of the main switch in the buck converter, the output voltage of the buck converter can be linearly adjusted so as to obtain a specific high voltage for ER. The driving system is self-excited; that is, no additional external driving circuit is required. Thus, it reduces cost and simplifies system structure. A prototype version of the actual product is studied to measure and evaluate the key waveforms. The feasibility of the proposed system is verified based on experimental results.

  2. Tunnel switch diode based on AlSb/GaSb heterojunctions


    Cheng, X.-C.; Cartoixà, X.; Barton, M. A.; Hill, C. J.; McGill, T. C.


    We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic "S" shaped current–voltage curve was found to occur for structures with AlSb barriers less than 300 Å thick. The switching voltage and current density exhibited less sensitivity to barrier and epilayer thickness than was predicted by the punch-through model. The results were correlated ...

  3. Deployment of low-voltage regulator considering existing voltage control in medium-voltage distribution systems

    Directory of Open Access Journals (Sweden)

    Hiroshi Kikusato


    Full Text Available Many photovoltaic (PV systems have been installed in distribution systems. This installation complicates the maintenance of all voltages within the appropriate range in all low-voltage distribution systems (LVDSs because the trends in voltage fluctuation differ in each LVDS. The installation of a low-voltage regulator (LVR that can accordingly control the voltage in each LVDS has been studied as a solution to this problem. Voltage control in a medium-voltage distribution system must be considered to study the deployment of LVRs. In this study, we installed LVRs in the LVDSs in which the existing voltage-control scheme cannot prevent voltage deviation and performed a numerical simulation by using a distribution system model with PV to evaluate the deployment of the LVRs.

  4. Torque harmonics of an asynchronous motor supplied by a voltage- or current-sourced inverter quasi-square operation

    Energy Technology Data Exchange (ETDEWEB)

    Kyyrae, J. [Helsinki University of Technology, Institute of Intelligent Power Electronics, Espoo (Finland)


    Voltage- and current-sourced dc-ac converters operating in quasi-square area are compared. Their characteristics are calculated with switching vector, which is space-vector of switching functions. When the load is an asynchronous motor various analytical equations, including torque, are calculated efficiently. Motor current and torque approximations are compared with the simulated ones. (orig.) 6 refs.

  5. In-Plane Crystallinity Effect on the Unipolar Resistance Switching Behavior of NiO Thin Film. (United States)

    Kim, Il Tae; Hur, Jaehyun; Chae, Seung Chul


    We report on the resistance switching behavior of high quality NiO thin films grown on Pt(111)/SiOx/Si and Pt(111)/Al2O3 crystals. Polarity independent resistance switching, i.e., unipolar resistance switching exhibited a substrate crystallinity dependence during the resistance switching. The unipolar resistance switching was observed commonly in NiO film grown on both substrates. High resistance state of NiO thin film without in-plane crystallinity showed higher resistance than that of NiO films with in-plane crystallinity. The NiO thin film without in-plane crystallinity also required high set voltages for the resistance switching from high resistance state to low resistance state and showed nonlinear I-V characteristics at high voltage region before the resistance switching.

  6. Method and system for a gas tube-based current source high voltage direct current transmission system

    Energy Technology Data Exchange (ETDEWEB)

    She, Xu; Chokhawala, Rahul Shantilal; Bray, James William; Sommerer, Timothy John; Zhou, Rui; Zhang, Di


    A high-voltage direct-current (HVDC) transmission system includes an alternating current (AC) electrical source and a power converter channel that includes an AC-DC converter electrically coupled to the electrical source and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and the DC-AC inverter each include a plurality of legs that includes at least one switching device. The power converter channel further includes a commutating circuit communicatively coupled to one or more switching devices. The commutating circuit is configured to "switch on" one of the switching devices during a first portion of a cycle of the H-bridge switching circuits and "switch off" the switching device during a second portion of the cycle of the first and second H-bridge switching circuits.

  7. Measuring voltage transients with an ultrafast scanning tunneling microscope

    DEFF Research Database (Denmark)

    Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher


    We use an ultrafast scanning tunneling microscope to resolve propagating voltage transients in space and time. We demonstrate that the previously observed dependence of the transient signal amplitude on the tunneling resistance was only caused by the electrical sampling circuit. With a modified......-gating photoconductive switch with a rigidly attached fiber, the probe is scanned without changing the probe characteristics. (C) 1997 American Institute of Physics....

  8. High Voltage Seismic Generator (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin


    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  9. Increased voltage photovoltaic cell (United States)

    Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)


    A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

  10. A Novel Soft-Switching Synchronous Buck Converter for Portable Applications

    Directory of Open Access Journals (Sweden)

    Anup Kumar Panda


    Full Text Available This paper proposes a zero-voltage-transition (ZVT pulse-width-modulated (PWM synchronous buck converter, which is designed to operate at low voltage and high efficiency typically required for portable systems. A new passive auxiliary circuit that allows the main switch to operate with zero-voltage switching has been incorporated in the conventional PWM synchronous buck converter. The operation principles and a detailed steady-state analysis of the ZVT-PWM synchronous converter implemented with the auxiliary circuit are presented. Besides, the main switch and all of the semiconductor devices operate under soft-switching conditions. Thus, the auxiliary circuit provides a larger overall efficiency. The feasibility of the auxiliary circuit is confirmed by simulation and experimental results.

  11. Voltage Controlled Dynamic Demand Response

    DEFF Research Database (Denmark)

    Bhattarai, Bishnu Prasad; Bak-Jensen, Birgitte; Mahat, Pukar


    central or dispersed generations might not be sufficient for future scenario. One of the effective methods to cope with this scenario is to enable demand response. This paper proposes a dynamic voltage regulation based demand response technique to be applied in low voltage (LV) distribution feeders....... An adaptive dynamic model has been developed to determine composite voltage dependency of an aggregated load on feeder level. Following the demand dispatch or control signal, optimum voltage setting at the LV substation is determined based on the voltage dependency of the load. Furthermore, a new technique...... has been proposed to estimate the voltage at consumer point of connection (POC) to ensure operation within voltage limits. Finally, the effectiveness of the proposed method is analyzed comprehensively with reference to three different scenarios on a low voltage (LV) feeder (Borup feeder) owned...

  12. The chording effect on core losses of three-phase induction motor under sinusoidal and PWM voltage supplies (United States)

    Deshmukh, Ram; Moses, A. J.; Anayi, F.

    The core losses and the lower-order voltage harmonics of four different chorded motors fed from sinusoidal supply and inverter voltage supply were invigilated at no-load condition. All the four motors were tested with 4, 8 and 16 kHz switching frequencies and 30, 40, 50 and 60 Hz modulation frequencies The motor with 120° coil pitch has the least core losses and the lower-order voltage harmonics under sinusoidal and pulse width modulation (PWM) voltage supplies at all switching and modulation frequencies. The drop in the core losses for this motor was 46% and 53% under sinusoidal and PWM voltage supplies, respectively. The motor with 120° coil pitch is recommended to be used under sinusoidal and PWM voltage supplies.

  13. Laterally-actuated inside-driven RF MEMS switches fabricated by a SOG process (United States)

    Wang, Li-Feng; Han, Lei; Tang, Jie-Ying; Huang, Qing-An


    This paper presents two RF MEMS switches, both of them are laterally-actuated and inside-driven. One is the push-pull type switch controlled by only one actuation signal, and the other is the low voltage three-state switch actuated by rhombic structures. To fabricate RF MEMS switches, the silicon on glass (SOG) based microwave transmission line is redesigned, and an electroplated gold layer is added to the standard SOG process flow. The measured insertion loss and isolation of the push-pull type switch at 6 GHz are -0.28 dB and -38.4 dB, respectively, and its measured pull-in voltage is 57 V. The measured insertion loss and isolation of the low voltage three-state switch at 6 GHz are -0.77 dB and -53 dB, respectively, and the measured pull-in voltage is only 15 V. Preliminary lifetime tests show the lifetimes of both switches exceed the magnitude of 107 cycles.

  14. A three-level support method for smooth switching of the micro-grid operation model (United States)

    Zong, Yuanyang; Gong, Dongliang; Zhang, Jianzhou; Liu, Bin; Wang, Yun


    Smooth switching of micro-grid between the grid-connected operation mode and off-grid operation mode is one of the key technologies to ensure it runs flexible and efficiently. The basic control strategy and the switching principle of micro-grid are analyzed in this paper. The reasons for the fluctuations of the voltage and the frequency in the switching process are analyzed from views of power balance and control strategy, and the operation mode switching strategy has been improved targeted. From the three aspects of controller’s current inner loop reference signal, voltage outer loop control strategy optimization and micro-grid energy balance management, a three-level security strategy for smooth switching of micro-grid operation mode is proposed. From the three aspects of controller’s current inner loop reference signal tracking, voltage outer loop control strategy optimization and micro-grid energy balance management, a three-level strategy for smooth switching of micro-grid operation mode is proposed. At last, it is proved by simulation that the proposed control strategy can make the switching process smooth and stable, the fluctuation problem of the voltage and frequency has been effectively improved.

  15. High energy semiconductor switch (United States)

    Risberg, R. L.


    The objective was a controller for electric motors. By operating standard Nema B induction motors at variable speed a great deal of energy is saved. This is especially true in pumping and air conditioning applications. To allow wider use of variable speed AC drives, and to provide improved performance, a better semiconductor switch was sought. This was termed the High Energy Semiconductor Switch.

  16. Voltage dip caused by the sequential energization of wind turbine transformers

    DEFF Research Database (Denmark)

    Arana Aristi, Iván; Holbøll, Joachim; Sørensen, T.


    turbine transformers simultaneously and two phase angles were defined and compared. NOWF consists of 72 wind turbines with a rated power of 2.3 MW. The turbines are connected in 8 radials of 36 kV submarine cables. Each radial is then connected by one “root” cable to a three winding park transformer (180......THIS paper presents the results from electromagnetic transient (emt) simulations using PSCAD, where the model of Nysted Offshore Wind Farm (NOWF) was created to simulate the voltage dips due to wind turbine transformer energization. Four different sequences energizing different numbers of wind...... turbine. The step up transformer (2,5 MVA, 33/0.69 kV) in every turbine is connected via a switch-disconnector and fuse on the MV-side. The grid codes are defined by the Transmission System Operator of each country, and some of them are not updated to regulate correctly the operation of large wind power...

  17. Low-voltage polyphasic circuits (United States)

    Baird, William H.; Jaynes, Michael L.


    Experimentation with polyphasic voltages is greatly simplified when microcontrollers are used to generate multiple square waves with fixed phase offsets. Each square wave is sent through a simple second-order Sallen-Key filter to produce an approximately sinusoidal voltage signal. The microcontroller allows the reproduction of split-phase and three-phase voltage relationships, mirroring those commonly distributed on the North American power grid, at safe voltage levels.

  18. High voltage variable diameter insulator (United States)

    Vanecek, David L.; Pike, Chester D.


    A high voltage feedthrough assembly (10) having a tubular insulator (15) extending between the ground plane ring (16) and the high voltage ring (30). The insulator (15) is made of Pyrex and decreases in diameter from the ground plane ring (16) to the high voltage ring (30), producing equipotential lines almost perpendicular to the wall (27) of the insulator (15) to optimize the voltage-holding capability of the feedthrough assembly (10).

  19. Write operation in MRAM with voltage controlled magnetic anisotropy (United States)

    Munira, Kamaram; Pandey, Sumeet; Sandhu, Gurtej

    In non-volatile Magnetic RAM, information is saved in the bistable configuration of the free layer in a magnetic tunnel junction (MTJ). New information can be written to the free layer through magnetic induction (Toggle MRAM) or manipulation of magnetization using electric currents (Spin Transfer Torque MRAM or STT-MRAM). Both of the writing methods suffer from a shortcoming in terms of energy efficiency. This limitation on energy performance is brought about by the need for driving relatively large electrical charge currents through the devices for switching. In STT-MRAM, the nonzero voltage drop across the resistive MTJ leads to significant power dissipation. An energy efficient way to write may be with the assistance of voltage controlled magnetic anisotropy (VCMA), where voltage applied across the MTJ creates an electric field that modulates the interfacial anisotropy between the insulator and free layer. However, VCMA cannot switch the free layer completely by 180 degree rotation of magnetization. It can lower the barrier between the two stable configurations or at best, cancel the barrier, allowing 90 degree rotation. A second mechanism, spin torque or magnetic field, is needed to direct the final switching destination.

  20. Switch on, switch off: stiction in nanoelectromechanical switches

    KAUST Repository

    Wagner, Till J W


    We present a theoretical investigation of stiction in nanoscale electromechanical contact switches. We develop a mathematical model to describe the deflection of a cantilever beam in response to both electrostatic and van der Waals forces. Particular focus is given to the question of whether adhesive van der Waals forces cause the cantilever to remain in the \\'ON\\' state even when the electrostatic forces are removed. In contrast to previous studies, our theory accounts for deflections with large slopes (i.e. geometrically nonlinear). We solve the resulting equations numerically to study how a cantilever beam adheres to a rigid electrode: transitions between \\'free\\', \\'pinned\\' and \\'clamped\\' states are shown to be discontinuous and to exhibit significant hysteresis. Our findings are compared to previous results from linearized models and the implications for nanoelectromechanical cantilever switch design are discussed. © 2013 IOP Publishing Ltd.

  1. Charge-pump voltage converter (United States)

    Brainard, John P [Albuquerque, NM; Christenson, Todd R [Albuquerque, NM


    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  2. Electrical switching in Sb doped Al23Te77 glasses (United States)

    Pumlianmunga; Ramesh, K.


    Bulk glasses (Al23Te77)Sbx (0≤ x≤10) prepared by melt quenching method show a change in switching type from threshold to memory for x≥5. An increase in threshold current (Ith) and a concomitant decrease in threshold voltage (Vth) and resisitivity(ρ) have been observed with the increase of Sb content. Raman spectra of the switched region in memory switching compositions show a red shift with respect to the as prepared glasses whereas in threshold switching compositions no such shift is observed. The magic angle spinning nuclear magnetic resonance (MAS NMR) of 27Al atom shows three different environments for Al ([4]Al, [5]Al and [6]Al). The samples annealed at their respective crystallization temperatures show rapid increase in [4]Al sites by annihilating [5]Al sites. The melts of threshold switching glasses (x≤2.5) quenched in water at room temperature (27 °C) show amorphous structure whereas, the melt of memory switching glasses (x>2.5) solidify into crystalline structure. The higher coordination of Al increases the cross-linking and rigidity. The addition of Sb increases the glass transition(Tg) and decreases the crystallization temperature(Tc). The decrease in the interval between the Tg and Tc eases the transition between the amorphous and crystalline states and improves the memory properties. The temperature rise at the time of switching can be as high as its melting temperature and the material in between the electrodes may melt to form a filament. The filament may consists of temporary (high resistive amorphous) and permanent (high conducting crystalline) units. The ratio between the temporary and the permanent units may decide the switching type. The filament is dominated by the permanent units in memory switching compositions and by the temporary units in threshold switching compositions. The present study suggests that both the threshold and memory switching can be understood by the thermal model and filament formation.

  3. Research into the Effect of Supercapacitor Terminal Voltage on Regenerative Suspension Energy-Regeneration and Dynamic Performance


    Wang, Ruochen; Ding, Yanshu; Ye, Qing; Ding, Renkai; Qian, Jingang


    To study the effect of supercapacitor initial terminal voltage on the regenerative and semiactive suspension energy-regeneration and dynamic performance, firstly, the relationship between supercapacitor terminal voltage and linear motor electromagnetic damping force and that between supercapacitor terminal voltage and recycled energy by the supercapacitor in one single switching period were both analyzed. The result shows that the linear motor electromagnetic damping force is irrelevant to th...

  4. Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

    DEFF Research Database (Denmark)

    Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna


    This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... optimization. The proposed method is used to calculate the voltage bands and droop settings of PV inverters at each node by the supervisory controller. The local controller of each PV inverter implements the volt/var control and if necessary, the active power curtailment as per the received settings and based...... on measured local voltages. The advantage of the proposed method is that the calculated reactive power and active power droop settings enable fair contribution of the PV inverters at each node to the voltage regulation. Simulation studies are conducted using DigSilent Power factory software on a simplified...

  5. Current switching in superconductor semiconductor bilayers (United States)

    Rahman, F.; Thornton, T. J.; Huber, R.


    We describe results of electrical transport experiments on niobium-on-indium arsenide and aluminium-on-indium arsenide bilayers. The temperature-dependent properties of electrical conduction in these bilayers is examined first in order to characterize the quality of super-semi interfaces. Next, we look at the differential resistance of the bilayers as a function of bias current. The switching of current between the metal and semiconductor components of the bilayer gives rise to a quasi-inductive effect as it causes voltage spikes in the composite system. Also described is the variation of critical current for these bilayers with temperature and magnetic field.

  6. The Topologies Research of a Soft Switching Bidirectional DC/DC Converter

    DEFF Research Database (Denmark)

    Zhang, Qi; Zhang, Yongping; Sun, Xiangdong


    A soft-switching solution implemented to the traditional bidirectional DC/DC converter is developed. The soft-switching cell, which composed of three auxiliary switches, one resonant capacitor and one resonant inductor, is equipped in the traditional bidirectional DC/DC converter to realize circuit...... circle. And the proposed topology of bidirectional soft-switching dc-dc converter(TASBC) performs ideal soft switching at boost operations. The characteristics of the proposed converter has been verified by MATLAB simulations and experimental results....... from a hard turning off process in one of the auxiliary switches, while the others experience the soft operation. As for the other method, the zero voltage or zero current transmissions in all switches are realized, however, the relative higher but fixed conduction losses are introduced by the resonant...

  7. High-Voltage Digital-To-Analog Converter (United States)

    Huston, Steven W.


    High-voltage 10-bit digital-to-analog converter operates under computer control to put out voltages up to 500 V at currents up to 35 mA. Circuit includes high-voltage power supply used to generate high-voltage square wave at frequency set by computer at value between 0.2 Hz and 10 Hz. Used to drive 0.02-microfarad, 1-kV capacitor at slewing rate of 1 V/microsecond to provide signal for robotic imaging system.

  8. A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger


    to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated halfbridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved......State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable....... This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage upto 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wideband gap semiconductor devices of GaN switches and SiC diodes are combined...

  9. Electrical Characterization of Temperature Dependent Resistive Switching in Pr0.7C0.3MnO3 (United States)

    Lopez, Melinda; Salvo, Christopher; Tsui, Stephen


    Resistive switching offers a non-volatile and reversible means to possibly create a more physically compact yet larger access capacity in memory technology. While there has been a great deal of research conducted on this electrical property in oxide materials, there is still more to be learned about this at both high voltage pulsing and cryogenic temperatures. In this work, the electrical properties of a PCMO-metal interface switch were examined after application of voltage pulsing varying from 100 V to 1000 V and at temperatures starting at 293 K and lowered to 80 K. What was discovered was that below temperatures of 150 K, the resistive switching began to decrease across all voltage pulsing and that at all temperatures before this cessation, the change in resistive switching increased with higher voltage pulsing. We suggest that a variable density of charge traps at the interface is a likely mechanism, and work continues to extract more details.

  10. Vacuum circuit breaker modelling for the assessment of transient recovery voltages: application to various network configurations

    DEFF Research Database (Denmark)

    Bak, Claus Leth; Borghetti, Alberto; Glasdam, Jakob Bærholm


    for both VCB sizing and insulation coordination studies of the components nearby the switching device. In this respect, their accurate modelling, which is the object of the paper, becomes crucial. In particular, the paper presents (the concept of) a VCB model and two relevant applications showing the model......Vacuum circuit breakers (VCBs) are widely used for medium voltage applications when low maintenance, long operating life, and large number of allowable switching cycles are required. The accurate estimation of the transient recovery voltages (TRVs) associated with their manoeuvres is indispensable...... capabilities of simulating TRVs due to opening/closing manoeuvres, namely the switching of large electrical motors and the switching of cables collecting offshore wind farms (OWFs). Data from digital fault recorder (DFR) in a water-pumping plant and from a measurement campaign in an OWF using a high...

  11. Electric field-controlled magnetization switching in Co/Pt thin-film ferromagnets

    Directory of Open Access Journals (Sweden)

    A. Siddique


    Full Text Available A study of dynamic and reversible voltage-controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is observed in a relatively thick film of 15 nm. A surface charge is induced by the formation of electrochemical double layer between the metallic thin film and non-aqueous lithium LiClO4 electrolyte to manipulate the magnetism. The change in the magnetic properties occurred by the application of an external electric field. As the negative voltage was increased, the coercivity and the switching magnetic field decreased thus activating magnetization switching. The results are envisaged to lead to faster and ultra-low-power magnetization switching as compared to spin-transfer torque (STT switching in spintronic devices.

  12. Influence of surface effects on the pull-in instability of NEMS electrostatic switches. (United States)

    Ma, Jianming Bryan; Jiang, Liying; Asokanthan, Samuel F


    The influence of surface effects, including residual surface stress and surface elasticity, on the pull-in instability of electrostatic switches in nanoelectromechanical systems (NEMS) is studied using an Euler-Bernoulli beam model. This model is inherently nonlinear due to the driving electrostatic force and Casimir force which become dominant at the nanoscale. Since no exact solutions are available for the resulting nonlinear differential equation, He's homotopy perturbation method (HPM) is used to get the approximate analytical solutions to the static bending of NEMS switches, which are validated by numerical solutions of the finite difference method (FDM). The results demonstrate that surface effects play a significant role in the selection of basic design parameters of NEMS switches, such as static deflection, pull-in voltage and detachment length. Surface effects on low-voltage actuation windows are also characterized for these switches. The present study is envisaged to provide useful insights for the design of NEMS switches.

  13. Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

    KAUST Repository

    Mayet, Abdulilah M.


    © 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young\\'s modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.

  14. Novel, Four-Switch, Z-Source Three-Phase Inverter

    DEFF Research Database (Denmark)

    Antal, Robert; Muntean, Nicolae; Boldea, Ion


    This paper presents a new z-source three phase inverter topology. The proposed topology combines the advantages of a traditional four-switch three-phase inverter with the advantages of the z impedance network (one front-end diode, two inductors and two X connected capacitors). This new topology......, besides the self-boost property, has low switch count and it can operate as a buck-boost inverter. In contrast to standard four-switch three-phase inverter which operates at half dc input voltage the proposed four-switch z-source inverter, by self boosting, brings the output voltage at same (or higher......) value as in six switch standard three-phase inverter. The article presents the derivation of the equations describing the operation of the converter based on space vector analysis, validation through digital simulations in PSIM and preliminary experimental results on a laboratory setup with a dsPIC30F...

  15. Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

    Directory of Open Access Journals (Sweden)

    Cheng-Yang Lin


    Full Text Available The study investigates the design and fabrication of a micromachined radio frequency (RF capacitive switch using the complementary metal oxide semiconductor-microelectromechanical system (CMOS-MEMS technology. The structure of the micromachined switch is composed of a membrane, eight springs, four inductors, and coplanar waveguide (CPW lines. In order to reduce the actuation voltage of the switch, the springs are designed as low stiffness. The finite element method (FEM software CoventorWare is used to simulate the actuation voltage and displacement of the switch. The micromachined switch needs a post-CMOS process to release the springs and membrane. A wet etching is employed to etch the sacrificial silicon dioxide layer, and to release the membrane and springs of the switch. Experiments show that the pull-in voltage of the switch is 12 V. The switch has an insertion loss of 0.8 dB at 36 GHz and an isolation of 19 dB at 36 GHz.

  16. ESR melting under constant voltage conditions

    Energy Technology Data Exchange (ETDEWEB)

    Schlienger, M.E.


    Typical industrial ESR melting practice includes operation at a constant current. This constant current operation is achieved through the use of a power supply whose output provides this constant current characteristic. Analysis of this melting mode indicates that the ESR process under conditions of constant current is inherently unstable. Analysis also indicates that ESR melting under the condition of a constant applied voltage yields a process which is inherently stable. This paper reviews the process stability arguments for both constant current and constant voltage operation. Explanations are given as to why there is a difference between the two modes of operation. Finally, constant voltage process considerations such as melt rate control, response to electrode anomalies and impact on solidification will be discussed.

  17. Unequal Input Voltages Distribution Between the Serial Connected Halfbridges

    Directory of Open Access Journals (Sweden)

    Radovan Ovcarcik


    Full Text Available This paper describes a topology of DC-DC converter consisting in two serial connected half-bridges. Secondary circuit is realized like a conventional full-wave rectifier. The main advantage of this topology is the possibility of dividing the input voltage between the half-bridges. The converter is controlled using the phase-shift modulation, which allows a ZVSoperation mode. The voltage unbalance between the inputs causes an important problem of the presented topology. It is necessary to avoid it by the control algorithm, which is described in the text. The practical results show a zero voltage switching technique and the limits of the chosen topology and of the control.

  18. Digitally Programmable High-Q Voltage Mode Universal Filter

    Directory of Open Access Journals (Sweden)

    D. Singh


    Full Text Available A new low-voltage low-power CMOS current feedback amplifier (CFA is presented in this paper. This is used to realize a novel digitally programmable CFA (DPCFA using transistor arrays and MOS switches. The proposed realizations nearly allow rail-to-rail swing capability at all the ports. Class-AB output stage ensures low power dissipation and high current drive capability. The proposed CFA/ DPCFA operates at supply voltage of ±0.75 V and exhibits bandwidth better than 95 MHz. An application of the DPCFA to realize a novel voltage mode high-Q digitally programmable universal filter (UF is given. Performances of all the proposed circuits are verified by PSPICE simulation using TSMC 0.25μm technology parameters.

  19. CFD Simulation of Transonic Flow in High-Voltage Circuit Breaker

    Directory of Open Access Journals (Sweden)

    Xiangyang Ye


    Full Text Available A high-voltage circuit breaker is an indispensable piece of equipment in the electric transmission and distribution systems. Transonic flow typically occurs inside breaking chamber during the current interruption, which determines the insulating characteristics of gas. Therefore, accurate compressible flow simulations are required to improve the prediction of the breakdown voltages in various test duties of high-voltage circuit breakers. In this work, investigation of the impact of the solvers on the prediction capability of the breakdown voltages in capacitive switching is presented. For this purpose, a number of compressible nozzle flow validation cases have been presented. The investigation is then further extended for a real high-voltage circuit breaker geometry. The correlation between the flow prediction accuracy and the breakdown voltage prediction capability is identified.

  20. Modeling switching behaviour of direct selling customers

    Directory of Open Access Journals (Sweden)

    P Msweli-Mbanga


    Full Text Available The direct selling industry suffers a high turnover rate of salespeople, resulting in high costs of training new salespeople. Further costs are incurred when broken relationships with customers cause them to switch from one product supplier to another. This study identifies twelve factors that drive the switching behaviour of direct sales customers and examines the extent to which these factors influence switching. Exploratory factor analysis was used to assess the validity of these factors. The factors were represented in a model that posits that an interpersonal relationship between a direct sales person and a customer moderates the relationship between switching behaviour and loyalty. Structural equation modeling was used to test the proposed model. The author then discusses the empirical findings and their managerial implications, providing further avenues for research.