WorldWideScience

Sample records for voltage modulation circuit

  1. A SQUID gradiometer module with wire-wound pickup antenna and integrated voltage feedback circuit

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Guofeng [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Peter Gruenberg Institute (PGI-8), Forschungszentrum Juelich (FZJ), D-52425 Juelich (Germany); Joint Research Laboratory on Superconductivity and Bioelectronics, Collaboration between CAS-Shanghai and FZJ, Shanghai 200050 (China); Graduate University of the Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Yi, E-mail: y.zhang@fz-juelich.de [Peter Gruenberg Institute (PGI-8), Forschungszentrum Juelich (FZJ), D-52425 Juelich (Germany); Joint Research Laboratory on Superconductivity and Bioelectronics, Collaboration between CAS-Shanghai and FZJ, Shanghai 200050 (China); Zhang Shulin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Joint Research Laboratory on Superconductivity and Bioelectronics, Collaboration between CAS-Shanghai and FZJ, Shanghai 200050 (China); Krause, Hans-Joachim [Peter Gruenberg Institute (PGI-8), Forschungszentrum Juelich (FZJ), D-52425 Juelich (Germany); Joint Research Laboratory on Superconductivity and Bioelectronics, Collaboration between CAS-Shanghai and FZJ, Shanghai 200050 (China); and others

    2012-10-15

    The performance of the direct readout schemes for dc SQUID, Additional Positive Feedback (APF), noise cancellation (NC) and SQUID bootstrap circuit (SBC), have been studied in conjunction with planar SQUID magnetometers. In this paper, we examine the NC technique applied to a niobium SQUID gradiometer module with an Nb wire-wound antenna connecting to a dual-loop SQUID chip with an integrated voltage feedback circuit for suppression of the preamplifier noise contribution. The sensitivity of the SQUID gradiometer module is measured to be about 1 fT/(cm {radical}Hz) in the white noise range in a magnetically shielded room. Using such gradiometer, both MCG and MEG signals are recorded.

  2. Accurate Switched-Voltage voltage averaging circuit

    OpenAIRE

    金光, 一幸; 松本, 寛樹

    2006-01-01

    Abstract ###This paper proposes an accurate Switched-Voltage (SV) voltage averaging circuit. It is presented ###to compensated for NMOS missmatch error at MOS differential type voltage averaging circuit. ###The proposed circuit consists of a voltage averaging and a SV sample/hold (S/H) circuit. It can ###operate using nonoverlapping three phase clocks. Performance of this circuit is verified by PSpice ###simulations.

  3. Evidence of Gate Voltage Oscillations during Short Circuit of Commercial 1.7 kV/ 1 kA IGBT Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Wu, Rui; Iannuzzo, Francesco;

    2015-01-01

    This paper analyzes the evidence of critical gate voltage oscillations in 1.7 kV/1 kA Insulated-Gate Bipolar Transistor (IGBT) power modules under short circuit conditions. A 6 kA/1.1 kV Non-Destructive Test (NDT) set up for repeatable short circuit tests has been built with a 40 nH stray inducta...

  4. Evidence of Gate Voltage Oscillations during Short Circuit of Commercial 1.7 kV/ 1 kA IGBT Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Wu, Rui; Iannuzzo, Francesco

    2015-01-01

    This paper analyzes the evidence of critical gate voltage oscillations in 1.7 kV/1 kA Insulated-Gate Bipolar Transistor (IGBT) power modules under short circuit conditions. A 6 kA/1.1 kV Non-Destructive Test (NDT) set up for repeatable short circuit tests has been built with a 40 nH stray inducta...

  5. Noise tolerant voltage-controlled LC oscillator circuits for deep submicron VLSI system-on-a-chip radio circuits

    OpenAIRE

    Typpö, Jukka

    2003-01-01

    This thesis studies the problems with maintaining the spectral purity of fully integrated VCO circuits for radio frequency synthesizers in single-chip system designs. LC tank circuit oscillator circuits are shown to convert amplitude variation in the tank circuit voltage into frequency modulation, if voltage dependent capacitances are present in the tank circuit. Since the parasitic capacitances of the gain transistors and the capacitance of the varactor device in a VCO circuit are voltage de...

  6. Sequential circuit design for radiation hardened multiple voltage integrated circuits

    Science.gov (United States)

    Clark, Lawrence T.; McIver, III, John K.

    2009-11-24

    The present invention includes a radiation hardened sequential circuit, such as a bistable circuit, flip-flop or other suitable design that presents substantial immunity to ionizing radiation while simultaneously maintaining a low operating voltage. In one embodiment, the circuit includes a plurality of logic elements that operate on relatively low voltage, and a master and slave latches each having storage elements that operate on a relatively high voltage.

  7. Low-Voltage Switched-Capacitor Circuits

    DEFF Research Database (Denmark)

    Bidari, E.; Keskin, M.; Maloberti, F.

    1999-01-01

    Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications.......Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

  8. 30 CFR 77.800 - High-voltage circuits; circuit breakers.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers. High-voltage circuits supplying power to portable or mobile equipment shall be protected by suitable...

  9. 30 CFR 75.800 - High-voltage circuits; circuit breakers.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 75.800... § 75.800 High-voltage circuits; circuit breakers. High-voltage circuits entering the underground area of any coal mine shall be protected by suitable circuit breakers of adequate interrupting...

  10. Evaluating the Performance of a Battery Using Temperature and Voltage Profiles and a Battery-Resistor Circuit Module

    Science.gov (United States)

    Sawyer, Bryan; Ji, Michelle; Gordon, Michael J.; Suppes, Galen J.

    2010-01-01

    An experimental learning module has been developed to study the mass and energy balance involved with operation of an AA Alkaline battery under a load current. An extension of the module allows evaluation of laboratory-assembled batteries using granular anodic/cathodic materials. The system allows load resistance to be varied and measures voltage…

  11. Evaluating the Performance of a Battery Using Temperature and Voltage Profiles and a Battery-Resistor Circuit Module

    Science.gov (United States)

    Sawyer, Bryan; Ji, Michelle; Gordon, Michael J.; Suppes, Galen J.

    2010-01-01

    An experimental learning module has been developed to study the mass and energy balance involved with operation of an AA Alkaline battery under a load current. An extension of the module allows evaluation of laboratory-assembled batteries using granular anodic/cathodic materials. The system allows load resistance to be varied and measures voltage…

  12. Kirchhoff voltage law corrected for radiating circuits

    CERN Document Server

    Lara, Vitor

    2014-01-01

    When a circular loop composed by a RLC is put to oscillate, the oscillation will eventually vanish in an exponentially decaying current, even considering superconducting wires, due to the emission of electric and magnetic dipole radiation. In this work we propose a modification on the Kirchhoff voltage law by adding the radiative contributions to the energy loss as an effective resistance, whose value is relatively small when compared to typical resistance value, but fundamental to describe correctly real circuits. We have also analysed the change in the pattern of the radiation spectra emitted by the circuit as we vary both the effective and electrical resistance.

  13. Isolated Fast High-Voltage Switching Circuit

    Science.gov (United States)

    Rizzi, Anthony

    1992-01-01

    Electrically isolated switching circuit supplies pulses at potentials up to 6.5 kV and currents up to 6.5 A, lasting as long as few microseconds. Turn-on time about 40 ns; turn-off time about 3 microseconds. Electrically isolated from control circuitry by means of fiber-optic signal coupling and isolated power supply. Electrical isolation protects both technician and equipment. This and similar circuits useful in such industrial and scientific applications as high-voltage, high-frequency test equipment; electrostatic-discharge test equipment; plasma-laboratory instrumentation; spark chambers; and electromagnetic-interference test equipment.

  14. Process, Voltage and Temperature Compensation Technique for Cascode Modulated PAs

    DEFF Research Database (Denmark)

    Sira, Daniel; Larsen, Torben

    2013-01-01

    This paper presents a process, voltage and temperature (PVT) compensation method for a cascode modulated polar power amplifier (PA). It is shown that it is possible to create a baseband replica circuit of the PA that has the same AM-AM nonlinearity as the PA itself. The replica circuit, that repr......This paper presents a process, voltage and temperature (PVT) compensation method for a cascode modulated polar power amplifier (PA). It is shown that it is possible to create a baseband replica circuit of the PA that has the same AM-AM nonlinearity as the PA itself. The replica circuit...

  15. Cavity Voltage Phase Modulation MD

    CERN Document Server

    Mastoridis, Themistoklis; Molendijk, John; Timko, Helga; CERN. Geneva. ATS Department

    2016-01-01

    The LHC RF/LLRF system is currently configured for extremely stable RF voltage to minimize transient beam loading effects. The present scheme cannot be extended beyond nominal beam current since the demanded power would exceed the peak klystron power and lead to saturation. A new scheme has therefore been proposed: for beam currents above nominal (and possibly earlier), the cavity phase modulation by the beam will not be corrected (transient beam loading), but the strong RF feedback and One-Turn Delay feedback will still be active for loop and beam stability in physics. To achieve this, the voltage set point will be adapted for each bunch. The goal of this MD was to test a new algorithm that would adjust the voltage set point to achieve the cavity phase modulation that would minimize klystron forward power.

  16. Integrated differential high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Farch, Kjartan

    2015-01-01

    In this paper an integrated differential high-voltage transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is designed and implemented in a 0.35 μm high-voltage process. Measurements are performed on the integrated circuit in order...... to assess its performance. The circuit generates pulses at differential voltage levels of 60V, 80V and 100 V, a frequency up to 5MHz and a measured driving strength of 1.75 V/ns with the CMUT connected. The total on-chip area occupied by the transmitting circuit is 0.18 mm2 and the power consumption...

  17. Integrated Reconfigurable High-Voltage Transmitting Circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2014-01-01

    -out and measurements are performed on the integrated circuit. The transmitting circuit is reconfigurable externally making it able to drive a wide variety of CMUTs. The transmitting circuit can generate several pulse shapes, pulse voltages up to 100 V, maximum pulse range of 50 V and frequencies up to 5 MHz. The area...

  18. A High-Voltage Level Tolerant Transistor Circuit

    NARCIS (Netherlands)

    Annema, Anne Johan; Geelen, Godefridus Johannes Gertrudis Maria

    2001-01-01

    A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1) con

  19. The voltage-current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

    Institute of Scientific and Technical Information of China (English)

    Bao Bo-Cheng; Feng Fei; Dong Wei; Pan Sai-Hu

    2013-01-01

    A flux-controlled memristor characterized by smooth cubic nonlinearity is taken as an example,upon which the voltage-current relationships (VCRs) between two parallel memristive circuits-a parallel memristor and capacitor circuit (the parallel MC circuit),and a parallel memristor and inductor circuit (the parallel ML circuit)-are investigated.The results indicate that the VCR between these two parallel memristive circuits is closely related to the circuit parameters,and the frequency and amplitude of the sinusoidal voltage stimulus.An equivalent circuit model of the memristor is built,upon which the circuit simulations and experimental measurements of both the parallel MC circuit and the parallel ML circuit are performed,and the results verify the theoretical analysis results.

  20. Inverter-based circuit design techniques for low supply voltages

    CERN Document Server

    Palani, Rakesh Kumar

    2017-01-01

    This book describes intuitive analog design approaches using digital inverters, providing filter architectures and circuit techniques enabling high performance analog circuit design. The authors provide process, supply voltage and temperature (PVT) variation-tolerant design techniques for inverter based circuits. They also discuss various analog design techniques for lower technology nodes and lower power supply, which can be used for designing high performance systems-on-chip.    .

  1. Integrated reconfigurable high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2015-01-01

    In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

  2. Integrated reconfigurable high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger;

    2015-01-01

    In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

  3. 30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

  4. Low Voltage Analog Circuit Design Based on the Flipped Voltage Follower

    Directory of Open Access Journals (Sweden)

    Neeraj Yadav

    2012-03-01

    Full Text Available The desire for portability of electronics equipment generated a need for low power system in battery products like hearing aids, implantable cardiac pacemakers, cell phones and hand held multimedia terminals. Low voltage analog circuit design differs considerably from those of high voltage analog circuit design. This paper present the basic cell knows as “flipped voltage follower” for low voltage/ low power operation. The detailed classification of basic topologies derived from the FVF cell is presented and there is a low voltage current mirror based on FVF cell has been presented. All the Circuit has been simulated using Hspice tool 0.18µm CMOS Technology. Different quality factors such as frequency response, power consumption are considered. A compression also made between previous current mirror and new designed current mirror. The layout of the current mirror has been also designed using Cadence tool.

  5. Thermally-induced voltage alteration for integrated circuit analysis

    Energy Technology Data Exchange (ETDEWEB)

    Cole, Jr., Edward I. (Albuquerque, NM)

    2000-01-01

    A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

  6. Thermally-induced voltage alteration for integrated circuit analysis

    Energy Technology Data Exchange (ETDEWEB)

    Cole, E.I. Jr.

    2000-06-20

    A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

  7. Variation-aware adaptive voltage scaling for digital CMOS circuits

    CERN Document Server

    Wirnshofer, Martin

    2013-01-01

    Increasing performance demands in integrated circuits, together with limited energy budgets, force IC designers to find new ways of saving power. One innovative way is the presented adaptive voltage scaling scheme, which tunes the supply voltage according to the present process, voltage and temperature variations as well as aging. The voltage is adapted “on the fly” by means of in-situ delay monitors to exploit unused timing margin, produced by state-of-the-art worst-case designs. This book discusses the design of the enhanced in-situ delay monitors and the implementation of the complete control-loop comprising the monitors, a control-logic and an on-chip voltage regulator. An analytical Markov-based model of the control-loop is derived to analyze its robustness and stability. Variation-Aware Adaptive Voltage Scaling for Digital CMOS Circuits provides an in-depth assessment of the proposed voltage scaling scheme when applied to an arithmetic and an image processing circuit. This book is written for engine...

  8. Adaptive Voltage Management Enabling Energy Efficiency in Nanoscale Integrated Circuits

    Science.gov (United States)

    Shapiro, Alexander E.

    Battery powered devices emphasize energy efficiency in modern sub-22 nm CMOS microprocessors rendering classic power reduction solutions not sufficient. Classical solutions that reduce power consumption in high performance integrated circuits are superseded with novel and enhanced power reduction techniques to enable the greater energy efficiency desired in modern microprocessors and emerging mobile platforms. Dynamic power consumption is reduced by operating over a wide range of supply voltages. This region of operation is enabled by a high speed and power efficient level shifter which translates low voltage digital signals to higher voltages (and vice versa), a key component that enables communication among circuits operating at different voltage levels. Additionally, optimizing the wide supply voltage range of signals propagating across long interconnect enables greater energy savings. A closed-form delay model supporting wide voltage range is developed to enable this capability. The model supports an ultra-wide voltage range from nominal voltages to subthreshold voltages, and a wide range of repeater sizes. To mitigate the drawback of lower operating speed at reduced supply voltages, the high performance exhibited by MOS current mode logic technology is exploited. High performance and energy efficient circuits are enabled by combining this logic style with power efficient near threshold circuits. Many-core systems that operate at high frequencies and process highly parallel workloads benefit from this combination of MCML with NTC. Due to aggressive scaling, static power consumption can in some cases overshadow dynamic power. Techniques to lower leakage power have therefore become an important objective in modern microprocessors. To address this issue, an adaptive power gating technique is proposed. This technique utilizes high levels of granularity to save additional leakage power when a circuit is active as opposed to standard power gating that saves static

  9. Optimal condition of memristance enhancement circuit using external voltage source

    Directory of Open Access Journals (Sweden)

    Hiroya Tanaka

    2014-05-01

    Full Text Available Memristor provides nonlinear response in the current-voltage characteristic and the memristance is modulated using an external voltage source. We point out by solving nonlinear equations that an optimal condition of the external voltage source exists for maximizing the memristance in such modulation scheme. We introduce a linear function to describe the nonlinear time response and derive an important design guideline; a constant ratio of the frequency to the amplitude of the external voltage source maximizes the memristance. The analysis completely accounts for the memristance behavior.

  10. Graphene-based THz modulator analyzed by equivalent circuit model

    DEFF Research Database (Denmark)

    Xiao, Binggang; Chen, Jing; Xie, Zhiyi;

    2016-01-01

    A terahertz (THz) modulator based on graphene is proposed and analysed by use of equivalent transmission line of a homogeneous mediumand the local anisotropic model of the graphene conductivity. The result calculated by the equivalent circuit is consistent with that obtained byFresnel transfer...... matrices. For the modulator proposed here, when the frequency of carrier wave is 0.6 THz, the theoretical analysis indicatesthat the modulation bandwidth is 55.5 kHz and the modulation depth is 81.3% for voltage change from 0 to 50 V...

  11. Programmable Low-Voltage Circuit Breaker and Tester

    Science.gov (United States)

    Greenfield, Terry

    2008-01-01

    An instrumentation system that would comprise a remotely controllable and programmable low-voltage circuit breaker plus several electric-circuit-testing subsystems has been conceived, originally for use aboard a spacecraft during all phases of operation from pre-launch testing through launch, ascent, orbit, descent, and landing. The system could also be adapted to similar use aboard aircraft. In comparison with remotely controllable circuit breakers heretofore commercially available, this system would be smaller, less massive, and capable of performing more functions, as needed for aerospace applications.

  12. Modification of circuit module of dye-sensitized solar cells (DSSC) for solar windows applications

    Science.gov (United States)

    Hastuti, S. D.; Nurosyid, F.; Supriyanto, A.; Suryana, R.

    2016-11-01

    This research has been conducted to obtain a modification of circuit producing the best efficiency of solar window modules as an alternative energy for daily usage. Solar window module was constructed by DSSC cells. In the previous research, solar window was created by a single cell of DSSC. Because it had small size, it could not be applied in the manufacture of solar window. Fabrication of solar window required a larger size of DSSC cell. Therefore, in the next research, a module of solar window was fabricated by connecting few cells of DSSC. It was done by using external electrical circuit method which was modified in the formation of series circuit and parallel circuit. Its fabrication used six cells of DSSC with the size of each cell was 1 cm × 9 cm. DSSC cells were sandwich structures constructed by an active layer of TiO2 as the working electrode, electrolyte solution, dye, and carbon layer. Characterization of module was started one by one, from one cell, two cells, three cells, until six cells of a module. It was conducted to recognize the increasing efficiency value as the larger surface area given. The efficiency of solar window module with series circuit was 0.06%, while using parallel circuit was 0.006%. Module with series circuit generated the higher voltage as the larger surface area. Meanwhile, module through parallel circuit tended to produce the constant voltage as the larger surface area. It was caused by the influence of resistance within the cable in each module. Module with circuit parallel used a longer cable than module with series circuit, so that its resistance increased. Therefore, module with parallel circuit generated voltage that tended to be constant and resulted small efficiency compared to the module with series circuit. It could be concluded that series external circuit was the best modification which could produce the higher efficiency.

  13. 30 CFR 75.902-1 - Maximum voltage ground check circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Maximum voltage ground check circuits. 75.902-1... Alternating Current Circuits § 75.902-1 Maximum voltage ground check circuits. The maximum voltage used for such ground check circuits shall not exceed 40 volts....

  14. USING PHOTO-INDUCED OPEN-CIRCUIT VOLTAGE

    African Journals Online (AJOL)

    open-circuit voltage decay, silicon photovoltaic solar cells. ..... cells in series configuration encapsulated on a ceramic base with glass cover and has an effective .... silicon solar cells and should be used parallel to the common performance test ...

  15. 30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

  16. 30 CFR 75.907 - Design of trailing cables for medium-voltage circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Design of trailing cables for medium-voltage... Medium-Voltage Alternating Current Circuits § 75.907 Design of trailing cables for medium-voltage circuits. Trailing cables for medium-voltage circuits shall include grounding conductors, a ground check...

  17. 30 CFR 77.902-1 - Fail safe ground check circuits; maximum voltage.

    Science.gov (United States)

    2010-07-01

    ... voltage. 77.902-1 Section 77.902-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902-1 Fail safe ground check circuits; maximum voltage. The maximum voltage used for ground check circuits under §...

  18. Design techniques for low-voltage analog integrated circuits

    Science.gov (United States)

    Rakús, Matej; Stopjaková, Viera; Arbet, Daniel

    2017-08-01

    In this paper, a review and analysis of different design techniques for (ultra) low-voltage integrated circuits (IC) are performed. This analysis shows that the most suitable design methods for low-voltage analog IC design in a standard CMOS process include techniques using bulk-driven MOS transistors, dynamic threshold MOS transistors and MOS transistors operating in weak or moderate inversion regions. The main advantage of such techniques is that there is no need for any modification of standard CMOS structure or process. Basic circuit building blocks like differential amplifiers or current mirrors designed using these approaches are able to operate with the power supply voltage of 600 mV (or even lower), which is the key feature towards integrated systems for modern portable applications.

  19. Process, Voltage and Temperature Compensation Technique for Cascode Modulated PAs

    DEFF Research Database (Denmark)

    Sira, Daniel; Larsen, Torben

    2013-01-01

    transconductance amplifier. The predistorted varying envelope signal is applied to the cascode gate of the PA. It is shown that the proposed PVT compensation technique significantly reduces the PVT spread of the PA linearity indicators and improves the PA linearity. Simulations were performed in a 0.13 μm CMOS......This paper presents a process, voltage and temperature (PVT) compensation method for a cascode modulated polar power amplifier (PA). It is shown that it is possible to create a baseband replica circuit of the PA that has the same AM-AM nonlinearity as the PA itself. The replica circuit......, that represents a transistor level model (empirical model) of the cascode modulated PA, is utilized in a PA analog predistorter. The analog predistorter linearizes and compensates for PVT variation of the cascode modulated PA. The empirical model is placed in the negative feedback of an operational...

  20. Low-voltage switched-current delta-sigma modulator

    Science.gov (United States)

    Tan, Nianxiong; Eriksson, Sven

    1995-05-01

    This paper presents the design of a fully differential switched-current delta-sigma modulator using a single 3.3-V power-supply voltage. At system level, we tailor the modulator structure considering the similarity and difference of switched-capacitor and switched-current realizations. At circuit level, we propose a new switched-current memory cell and integrator with improved common mode feedback, without which low power-supply-voltage operation would not be possible. The whole modulator was implemented in a 0.8- micron double-metal digital CMOS process. It occupies an active area of 0.53 x 0.48 mm(sup 2) and consumes a current of 0.6 mA from a single 3.3-V power supply. The measured dynamic range is over 10 b.

  1. A New Low Voltage P-MOS Bulk Driven Current Mirror Circuit

    Directory of Open Access Journals (Sweden)

    Anuj Dugaya

    2013-08-01

    Full Text Available This work proposes a new low voltage current mirror circuit using bulk driven technique. Bulk driventechnique is used to reduce the threshold of PMOS used in low voltage current mirror circuits (LVCM.TheProposed circuit consist of 4 PMOS and 5 NMOS. The proposed circuit operated at +0.85 V supplyvoltage.The bandwidth of this circuit has also been enhanced using resistive compensation technique. Theproposed circuit has been simulated in Cadence Design Environment in UMC 180nm CMOS technology. Atransfer characteristic of the proposed circuit has been discussed. The proposed circuit find application inlow voltage and low power analog integrated circuits.

  2. Silicon solar cells with high open-circuit voltage

    Science.gov (United States)

    Minnucci, J. A.; Matthei, K. W.; Kirkpatrick, A. R.; Mccrosky, A.

    1980-01-01

    Open-circuit voltages as high as 0.645 V (AM0-25 C) have been obtained by a new process developed for low-resistivity silicon. The method utilizes high-dose phosphorus implantation, followed by furnace annealing and simultaneous oxide growth to form high-efficiency, shallow junctions. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient AR coating. Boron doped silicon with resistivities from 0.1 to 0.3 ohm-cm has been processed according to this sequence; results show highest open-circuit voltage is attained with 0.1-ohm-cm starting material. The effects of bandgap narrowing, caused by high doping concentrations in the junction, were also investigated by implanting phosphorus over a wide range of dose levels.

  3. 30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. On or before September 30, 1970, low- and medium-voltage resistance grounded systems shall...

  4. 30 CFR 77.802 - Protection of high-voltage circuits; neutral grounding resistors; disconnecting devices.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of high-voltage circuits; neutral... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.802 Protection of high-voltage circuits; neutral grounding resistors; disconnecting devices. High-voltage...

  5. 30 CFR 77.803-1 - Fail safe ground check circuits; maximum voltage.

    Science.gov (United States)

    2010-07-01

    ... voltage. 77.803-1 Section 77.803-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.803-1 Fail safe ground check circuits; maximum voltage. The maximum voltage used for ground check circuits under § 77.803 shall...

  6. Novel Low Loss Active Voltage Clamp Circuit for Series Connection of RCGCT thyristors

    Science.gov (United States)

    Ito, Hiroshi; Suzuki, Akihiro; Iwata, Akihiko

    This paper describes novel low loss active voltage clamp circuits for the series connection of RCGCT thyristors. For high voltage converters the series connection of power semiconductor devices is an essential technique for direct switching of high voltages. Several protection circuits have been applied to the series connection of RCGCT thyristors such as CRD snubber circuits which suppress over-voltages across RCGCT thyristors, and voltage balancing resistors to equalize voltage sharing in steady states. However, significant losses in these protection circuits lower the converter’s efficiency. We propose novel low-loss protection circuits, which have active voltage clamp snubber circuits and static voltage balancing circuits. The clamp capacitor voltage of the active voltage clamp snubber circuits are designed to be higher than the equally divided DC-Link voltage. This method can reduce the loss of the clamp circuit to no more than 1/10 of that of the conventional CRD snubber. Also the static voltage balancing circuits compensate for the voltage imbalance generated by the difference in the leakage current between the series connection RCGCT thyristors.

  7. 30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

  8. Automatic System for the D.C. High Voltage Qualification of the Superconducting Electrical Circuits of the LHC Machine

    CERN Document Server

    Bozzini, D; Russenschuck, Stephan; Bednarek, M; Jurkiewicz, P; Kotarba, A; Ludwin, J; Olek, S

    2008-01-01

    A d.c. high voltage test system has been developed to verify automatically the insulation resistance of the powering circuits of the LHC. In the most complex case, up to 72 circuits share the same volume inside cryogenic lines. Each circuit can have an insulation fault versus any other circuit or versus ground. The system is able to connect up to 80 circuits and apply a voltage up to 2 kV D.C. The leakage current flowing through each circuit is measured within a range of 1 nA to 1.6 mA. The matrix of measurements allows characterizing the paths taken by the currents and locating weak points of the insulation between circuits. The system is composed of a D.C. voltage source and a data acquisition card. The card is able to measure with precision currents and voltages and to drive up to 5 high voltage switching modules offering 16 channels each. A LabVIEW application controls the system for an automatic and safe operation. This paper describes the hardware and software design, the testing methodology and the res...

  9. Stabilizing Ferroresonance Oscillations in Voltage Transformers Using Limiter Circuit

    Directory of Open Access Journals (Sweden)

    Hamid Radmanesh

    2012-12-01

    Full Text Available This paper employs the multiple scales method and chaos theory for analyzing chaotic behavior of the voltage transformer (VT with linear core loss model. It is shown that ferroresonance phenomenon in VTs can be classified as chaotic dynamics, including a sequence of bifurcations such as period doubling bifurcation (PDB, saddle node bifurcation (SNB, Hopf Bifurcation (HB and chaos. Bifurcation diagrams and phase plane diagrams are drawn using a continuation method for linear core loss model and lyapunov exponents are obtained using the multiple scales method. At first an overview of the subject in the literature is provided. Then, ferroresonance phenomenon is introduced and its various types in a VT are simulated. Finally the effects of ferroresonance suppression circuit on stabilizing these oscillations are studied. The proposed approach is implemented using MATLAB, and simulation results are presented. The results show connecting the ferroresonance suppression circuit to the system configuration, causes great controlling effect on ferroresonance overvoltage.

  10. Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

    Science.gov (United States)

    Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

    2012-01-01

    Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

  11. Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

    Science.gov (United States)

    Hernández-Rosales, E.; Cedeño, E.; Hernandez-Wong, J.; Rojas-Trigos, J. B.; Marin, E.; Gandra, F. C. G.; Mansanares, A. M.

    2016-07-01

    In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

  12. Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

    Energy Technology Data Exchange (ETDEWEB)

    Hernández-Rosales, E.; Cedeño, E. [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil); Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Hernandez-Wong, J. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); CONACYT, México, DF, México (Mexico); Rojas-Trigos, J. B.; Marin, E. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Gandra, F. C. G.; Mansanares, A. M., E-mail: manoel@ifi.unicamp.br [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil)

    2016-07-25

    In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

  13. 30 CFR 77.902 - Low- and medium-voltage ground check monitor circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage ground check monitor... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902 Low- and medium-voltage ground check monitor circuits. On and after September 30, 1971, three-phase low- and...

  14. 30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. No electrical work shall be performed on low-, medium-, or high-voltage distribution circuits or...

  15. 30 CFR 75.705-10 - Tying into energized high-voltage surface circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Tying into energized high-voltage surface....705-10 Tying into energized high-voltage surface circuits. If the work of forming an additional circuit by tying into an energized high-voltage surface line is performed from the ground, any...

  16. 30 CFR 77.704-10 - Tying into energized high-voltage surface circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Tying into energized high-voltage surface... AREAS OF UNDERGROUND COAL MINES Grounding § 77.704-10 Tying into energized high-voltage surface circuits. If the work of forming an additional circuit by tying into an energized high-voltage surface line...

  17. 30 CFR 75.803-1 - Maximum voltage ground check circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Maximum voltage ground check circuits. 75.803-1 Section 75.803-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE... § 75.803-1 Maximum voltage ground check circuits. The maximum voltage used for ground check...

  18. A New Low Voltage P-MOS Bulk Driven Current Mirror Circuit

    Directory of Open Access Journals (Sweden)

    Anuj Dugaya

    2013-08-01

    Full Text Available This work proposes a new low voltage current mirror circuit using bulk driven technique. Bulk driven technique is used to reduce the threshold of PMOS u sed in low voltage current mirror circuits (LVCM.T he Proposed circuit consist of 4 PMOS and 5 NMOS. The proposed circuit operated at +0.85 V supply voltage.The bandwidth of this circuit has also been enhanced using resistive compensation technique. T he proposed circuit has been simulated in Cadence Desi gn Environment in UMC 180nm CMOS technology. A transfer characteristic of the proposed circuit has been discussed. The proposed circuit find applicat ion in low voltage and low power analog integrated circuit s.

  19. A novel voltage output integrated circuit temperature sensor

    Institute of Scientific and Technical Information of China (English)

    吴晓波; 方志刚; 等

    2002-01-01

    The novel integrated circuit(IC) temperature sensor presented in this paper works similarly as a two-terminal Zener,has breakdown voltage directly proportional to Kelvin temperature at 10mV/℃,with typical error of less tha ±1.0℃ over a temperature range from-50℃to +120℃ .In addition to all the features that conventional IC temperature sensors have,the new device also has very low static power dissipation(0.5mW),low output impedance(less than 1Ω),execllent stability,high reproducibility,and high precision.The sensor's circuit design and layout are discussed in detail.Applications of the sensor include almost and type of temperature sensing over the range of -50℃-+125℃。The low impedance and linear output of the device make interfacing the readout or control circuitry especially easy.Due to the excellent performance and low cost of this sensor.more application of the sensor over wide temperature range are expected.

  20. High voltage generator circuit with low power and high efficiency applied in EEPROM

    Institute of Scientific and Technical Information of China (English)

    Liu Yan; Zhang Shilin; Zhao Yiqiang

    2012-01-01

    This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory (EEPROM).The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique.The high efficiency is dependent on the zero threshold voltage (Vth) MOSFET and the charge transfer switch (CTS) charge pump.The proposed high voltage generator circuit has been implemented in a 0.35μm EEPROM CMOS process.Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48 μW and a higher pumping efficiency (83.3%) than previously reported circuits.This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation.

  1. Optimization of Temperature Coefficient and Noise Analysis of MOSFET- Only Voltage Reference Circuit

    Directory of Open Access Journals (Sweden)

    Arathi.p

    2016-09-01

    Full Text Available The optimization of temperature coefficient and comparison of output noise of two MOSFET only voltage references are introduced. The circuit behavior is analytically described and the performance of the proposed circuits are confirmed through 180nm CMOS technology in virtuoso and the simulation results are presented. Both the circuits can be operated with supply voltage varies from 0.5-1.2V.The output voltage references varied over a temperature range of -25℃ to 50℃.

  2. Study on the instantaneous protection reliability of low voltage circuit breakers

    Institute of Scientific and Technical Information of China (English)

    LU Jian-guo; DU Tai-hang; LUO Yan-yan

    2007-01-01

    This paper outlines the significance of enhancing the instantaneous protection reliability of low voltage circuit breakers and describes their main failure modes. The instantaneous failure mechanism of low voltage circuit breakers was analyzed so that measures to improve instantaneous protection reliability can be determined. Furthermore, the theory of the instantaneous characteristics Calibration device for low voltage circuit breakers and the method of eliminating the non-periodic component of test current are given in detail. Finally, the test results are presented.

  3. Equivalent realisation circuit for a class of non-ideal voltage-controlled memristors

    Directory of Open Access Journals (Sweden)

    Saihu Pan

    2015-12-01

    Full Text Available In this study, an equivalent realisation circuit with off-the-shelf components and devices is proposed, which can be used to equivalently implement a class of non-ideal voltage-controlled memristors. The mathematical models of the equivalent realisation circuit with three function arithmetic circuits are built and their fingerprints are analysed by the pinched hysteresis loops with bipolar periodic voltage stimuli. The numerical simulations are easily verified by experimental measurements, which indicate that when three function arithmetic circuits are linked, the equivalent realisation circuit can realise three non-ideal voltage-controlled memristors with different non-linearities.

  4. Optimal planning of series resistor to control time constant of test circuit for high-voltage AC circuit-breakers

    Directory of Open Access Journals (Sweden)

    Yoon-Ho Kim

    2016-01-01

    Full Text Available The equivalent test circuit that can deliver both short-circuit current and recovery voltage is used to verify the performance of high-voltage circuit breakers. Most of the parameters in this circuit can be obtained by using a simple calculation or a simulation program. The ratings of the circuit breaker include rated short-circuit breaking current, rated short-circuit making current, rated operating sequence of the circuit breaker and rated short-time current. Among these ratings, the short-circuit making capacity of the circuit breaker is expressed in peak value and not in RMS value similar to breaking capacity. A series resistor or super-excitation is used to control the peak value of the short-circuit current in the equivalent test circuit. When using a series resistor, a higher rating of circuit breakers leads to a higher thermal capacity, thereby requiring additional space. Therefore, an effective, optimal design of the series resistor is essential. This paper proposes a method for reducing thermal capacity and selecting the optimal resistance to limit the making current by controlling the DC time constant of the test circuit.

  5. A novel voltage output integrated circuit temperature sensor

    Institute of Scientific and Technical Information of China (English)

    吴晓波; 赵梦恋; 严晓浪; 方志刚

    2002-01-01

    The novel integrated circuit (IC) temperature sensor presented in this paper works similarly as a two-terminal Zener, has breakdown voltage directly proportional to Kelvin temperature at 10 mV/℃, with typical error of less than ±1.0℃ over a temperature range from -50℃ to +125℃. In addition to all the features that conventional IC temperature sensors have, the new device also has very low static power dissipation ( 0.5 mW ) , low output impedance ( less than 1Ω), excellent stability, high reproducibility, and high precision. The sensor's circuit design and layout are discussed in detail. Applications of the sensor include almost any type of temperature sensing over the range of -50℃-+125℃. The low impedance and linear output of the device make interfacing the readout or control circuitry especially easy. Due to the excellent performance and low cost of this sensor, more applications of the sensor over wide temperature range are expected.

  6. High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip

    Science.gov (United States)

    Issadore, David; Franke, Thomas; Brown, Keith A.; Hunt, Thomas P.; Westervelt, Robert M.

    2010-01-01

    A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm2 in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip’s surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. PMID:20625468

  7. A novel high voltage start up circuit for an integrated switched mode power supply

    Energy Technology Data Exchange (ETDEWEB)

    Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

  8. SEMICONDUCTOR DEVICES: A novel high voltage start up circuit for an integrated switched mode power supply

    Science.gov (United States)

    Hao, Hu; Xingbi, Chen

    2010-09-01

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.

  9. Modeling self-priming circuits for dielectric elastomer generators towards optimum voltage boost

    Science.gov (United States)

    Zanini, Plinio; Rossiter, Jonathan; Homer, Martin

    2016-04-01

    One of the main challenges for the practical implementation of dielectric elastomer generators (DEGs) is supplying high voltages. To address this issue, systems using self-priming circuits (SPCs) — which exploit the DEG voltage swing to increase its supplied voltage — have been used with success. A self-priming circuit consists of a charge pump implemented in parallel with the DEG circuit. At each energy harvesting cycle, the DEG receives a low voltage input and, through an almost constant charge cycle, generates a high voltage output. SPCs receive the high voltage output at the end of the energy harvesting cycle and supply it back as input for the following cycle, using the DEG as a voltage multiplier element. Although rules for designing self-priming circuits for dielectric elastomer generators exist, they have been obtained from intuitive observation of simulation results and lack a solid theoretical foundation. Here we report the development of a mathematical model to predict voltage boost using self-priming circuits. The voltage on the DEG attached to the SPC is described as a function of its initial conditions, circuit parameters/layout, and the DEG capacitance. Our mathematical model has been validated on an existing DEG implementation from the literature, and successfully predicts the voltage boost for each cycle. Furthermore, it allows us to understand the conditions for the boost to exist, and obtain the design rules that maximize the voltage boost.

  10. Voltage modulation of propagating spin waves in Fe

    Energy Technology Data Exchange (ETDEWEB)

    Nawaoka, Kohei; Shiota, Yoichi; Miwa, Shinji; Tamura, Eiiti [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); CREST, Japan Science Technology, Kawaguchi, Saitama 332-0012 (Japan); Tomita, Hiroyuki; Mizuochi, Norikazu; Shinjo, Teruya [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Suzuki, Yoshishige, E-mail: suzuki-y@mp.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); CREST, Japan Science Technology, Kawaguchi, Saitama 332-0012 (Japan); Display and Semiconductor Physics Department, Korea University, Sejong 339-700 (Korea, Republic of)

    2015-05-07

    The effect of a voltage application on propagating spin waves in single-crystalline 5 nm-Fe layer was investigated. Two micro-sized antennas were employed to excite and detect the propagating spin waves. The voltage effect was characterized using AC lock-in technique. As a result, the resonant field of the magnetostatic surface wave in the Fe was clearly modulated by the voltage application. The modulation is attributed to the voltage induced magnetic anisotropy change in ferromagnetic metals.

  11. High-Mixed-Voltage Analog and RF Circuit Techniques for Nanoscale CMOS

    CERN Document Server

    Mak, Pui-In

    2012-01-01

    This book presents high-/mixed-voltage analog and radio frequency (RF) circuit techniques for developing low-cost multistandard wireless receivers in nm-length CMOS processes.  Key benefits of high-/mixed-voltage RF and analog CMOS circuits are explained, state-of-the-art examples are studied, and circuit solutions before and after voltage-conscious design are compared. Three real design examples are included, which demonstrate the feasibility of high-/mixed-voltage circuit techniques.    Provides a valuable summary and real case studies of the state-of-the-art in high-/mixed-voltage circuits and systems; Includes novel high-/mixed-voltage analog and RF circuit techniques – from concept to practice; Describes the first high-voltage-enabled mobile-TVRF front-end in 90nm CMOS and the first mixed-voltage full-band mobile-TV Receiver in 65nm CMOS; Demonstrates the feasibility of high-/mixed-voltage circuit techniques with real design examples.  

  12. Modulation of anxiety circuits by serotonergic systems

    DEFF Research Database (Denmark)

    Lowry, Christopher A; Johnson, Philip L; Hay-Schmidt, Anders

    2005-01-01

    Anxiety is a complex emotional state associated with sustained heightened autonomic and behavioral arousal and an increase in avoidance behavior. Anxiety-related behavior is a form of risk assessment behavior that is associated with a level of uncertainty or unpredictability regarding the outcome...... of emotionally salient events, often when both rewarding and aversive outcomes are possible. In this review, we highlight recent advances in our understanding of the neural circuits regulating anxiety states and anxiety-related behavior with an emphasis on the role of brainstem serotonergic systems in modulating...... anxiety-related circuits. In particular, we explore the possibility that the regulation of anxiety states and anxiety-related behavior by serotonergic systems is dependent on a specific, topographically organized mesolimbocortical serotonergic system that originates in the mid-rostrocaudal and caudal...

  13. Analysis of Possibilities to Reduce the Voltages Induced in Multi-circuit and Multi-voltage Overhead Lines

    Directory of Open Access Journals (Sweden)

    Rafał Tarko

    2015-09-01

    Full Text Available This paper presents the issues of electromagnetic interactions in a four-circuit and dual-voltage power line. Such solutions are increasingly used in practice due to difficulties in land acquisition for the construction of new power lines. Lines of this type, however, have some disadvantages, incl. the electromagnetic interactions between the circuits and voltages induced as their consequence. These issues are considered in relation to an existing four-circuit, 110 kV and 15 kV line. Results of the studies of the interaction effects in a real system, and an analysis of selected ways to reduce the voltage induced in 15 kV line circuits are presented.

  14. A Simple Voltage Controlled Oscillator Using Bootstrap Circuits and NOR-RS Flip Flop

    Science.gov (United States)

    Chaikla, Amphawan; Pongswatd, Sawai; Sasaki, Hirofumi; Fujimoto, Kuniaki; Yahara, Mitsutoshi

    This paper presents a simple and successful design for a voltage controlled oscillator. The proposed circuit is based on the use of two identical bootstrap circuits and a NOR-RS Flip Flop to generate wide-tunable sawtooth and square waves. Increasing control voltage linearly increases the output oscillation frequency. Experimental results verifying the performances of the proposed circuit are in agreement with the calculated values.

  15. [An integral chip for the multiphase pulse-duration modulation used for voltage changer in biomedical microprocessor systems].

    Science.gov (United States)

    Balashov, A M; Selishchev, S V

    2004-01-01

    An integral chip (IC) was designed for controlling the step-down pulse voltage converter, which is based on the multiphase pulse-duration modulation, for use in biomedical microprocessor systems. The CMOS technology was an optimal basis for the IC designing. An additional feedback circuit diminishes the output voltage dispersion at dynamically changing loads.

  16. Open circuit voltage characterization of lithium-ion batteries

    Science.gov (United States)

    Pattipati, B.; Balasingam, B.; Avvari, G. V.; Pattipati, K. R.; Bar-Shalom, Y.

    2014-12-01

    Several aspects of the open circuit voltage (OCV) characterization of Li-ion batteries as it applies to battery fuel gauging (BFG) in portable applications are considered in this paper. Accurate knowledge of the nonlinear relationship between the OCV and the state of charge (SOC) is required for adaptive SOC tracking during battery usage. BFG in portable applications requires this OCV-SOC characterization to meet additional constraints: (i) The OCV-SOC characterization has to be defined with a minimum number of parameters; (ii) It should be easily computable and invertible with few operations; and (iii) Computation of the model, its derivative and its inverse should be possible in a numerically stable way. With the help of OCV-SOC characterization data collected from 34 battery cells each at 16 different temperatures ranging from -25 °C to 50 °C, we present the following results in this paper: (a) A robust normalized OCV modeling approach that dramatically reduces the number of OCV-SOC parameters and as a result simplifies and generalizes the BFG across temperatures and aging, (b) Several novel functions for OCV modeling, (c) Efficient methods to simplify the computations of OCV functions, (d) Novel methods for OCV parameter estimation, and (e) A detailed performance analysis.

  17. Testing to Investigate Stress-LifetimeCharacteristics of High Voltage Printed Circuit Boards

    Science.gov (United States)

    El Korashy, Oliver; Franke, Andreas; Gollor, Matthias

    2014-08-01

    Printed circuit boards (PCBs) are typically used in all electronic equipment, including those conditioning or controlling high voltage (HV) for space satellite applications. With the use of new subsystems that require higher voltages (generally several hundred volts up to tens of kV), stress-lifetime issues are becoming more complex. In order to allow compact design and cost efficient production of HV modules, there is an increasing demand to improve the design of PCBs with encapsulation or conformal coating at higher voltages.Within a PCB there are a number of electrical field interfaces each of which can have individual stress- lifetime characteristics, and the influence of environmental aging should also be considered, which means a large number of sample types should be tested to gain experimental evidence to define the margin for each interface. This paper demonstrates a method to test multiple samples at a fixed DC voltage stress until the event of a breakdown, and presents test results from 6 single-sided encapsulated PCB samples.

  18. Robustness of MW-Level IGBT modules against gate oscillations under short circuit events

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Wu, Rui; Iannuzzo, Francesco

    2015-01-01

    The susceptibility of MW-level IGBT power modules to critical gate voltage oscillations during short circuit events has been evidenced experimentally. This paper proposes a sensitivity analysis method to better understand the oscillating behavior dependence on different operating conditions (i.e....

  19. Program-Controlled High Voltage Module in Active Voltage Dividers(AVD) for MPGD

    CERN Document Server

    Ginting, Muhammad Fadhil

    2016-01-01

    Micro Pattern Gas Detectors (MPGD) applications are rapidly developing and became an important part of upgrades for the LHC detectors. RD51/CERN have worked on Active Voltage Divider (AVD) technology for multistage MPGDs, One of the next developments for the AVD is to design and integrate high voltage module in a single box. The Program-Controlled High Voltage Module, part of one AIDA2020 project, has been successfully designed and developed, and can be integrated in AVD design.

  20. Low Power, Reduced Dynamic Voltage Swing Domino Logic Circuits

    OpenAIRE

    Salendra.Govindarajulu; Dr.T.Jayachandra Prasad; Rangappa, P

    2010-01-01

    Dynamic domino logic circuits are widely used in modern digital VLSI circuits. These dynamic circuits are often favoured in high performance designs because of the speed advantage offered over static CMOS logic circuits. The main drawbacks of dynamic logic are a lack of design automation, a decreased tolerance to noise and increased power dissipation. In this work, new reduced – swing domino logic techniques which provide significant low power dissipation as compared to traditional domino cir...

  1. Near-Threshold Computing and Minimum Supply Voltage of Single-Rail MCML Circuits

    Directory of Open Access Journals (Sweden)

    Ruiping Cao

    2014-01-01

    Full Text Available In high-speed applications, MOS current mode logic (MCML is a good alternative. Scaling down supply voltage of the MCML circuits can achieve low power-delay product (PDP. However, the current almost all MCML circuits are realized with dual-rail scheme, where the NMOS configuration in series limits the minimum supply voltage. In this paper, single-rail MCML (SRMCML circuits are described, which can avoid the devices configuration in series, since their logic evaluation block can be realized by only using MOS devices in parallel. The relationship between the minimum supply voltage of the SRMCML circuits and the model parameters of MOS transistors is derived, so that the minimum supply voltage can be estimated before circuit designs. An MCML dynamic flop-flop based on SRMCML is also proposed. The optimization algorithm for near-threshold sequential circuits is presented. A near-threshold SRMCML mode-10 counter based on the optimization algorithm is verified. Scaling down the supply voltage of the SRMCML circuits is also investigated. The power dissipation, delay, and power-delay products of these circuits are carried out. The results show that the near-threshold SRMCML circuits can obtain low delay and small power-delay product.

  2. A Comparative Study of Ultra-Low Voltage Digital Circuit Design

    Directory of Open Access Journals (Sweden)

    Aaron Arthurs

    2012-07-01

    Full Text Available Ultra-low voltage digital circuit design is an active research area, especially for portable applications such as wearable electronics, intelligent remote sensors, implantable medical devices, and energy-harvesting systems. Due to their application scenarios and circuit components, two major goals for these systems are minimizing energy consumption and improving compatibility with low-voltage power supplies and analog components. The most effective solution to achieve these goals is to reduce the supply voltage, which,however, raises the issue of operability. At ultra-low supply voltages, the integrity of digital signals degrades dramatically due to the indifference between active and leakage currents. In addition, the system timing becomes more unpredictable as the impact of process and supply voltage variations being more significant at lower voltages. This paper presents a comparative study among three techniques for designing digital circuits operating at ultra-low voltages, i.e., Schmitt-triggered gate structure, delayinsensitive asynchronous logic, and Fully-Depleted Silicon-on-Insulator technology. Results show that despite the tradeoffs, all eight combinations of these techniques are viable for designing ultra-low voltage circuits. For a given application, the optimum circuit design can be selected from these combinations based on the lowest voltage, the dynamic range, the power budget, the performance requirement, and the available semiconductor process node.

  3. A Comparative Study of Ultra-Low Voltage Digital Circuit Design

    Directory of Open Access Journals (Sweden)

    Aaron Arthurs,

    2012-06-01

    Full Text Available Ultra-low voltage digital circuit design is an active research area, especially for portable applications such as wearable electronics, intelligent remote sensors, implantable medical devices, and energy-harvesting systems. Due to their application scenarios and circuit components, two major goals for these systems are minimizing energy consumption and improving compatibility with low-voltage power supplies and analog components. The most effective solution to achieve these goals is to reduce the supply voltage, which,however, raises the issue of operability. At ultra-low supply voltages, the integrity of digital signals degrades dramatically due to the indifference between active and leakage currents. In addition, the system timing becomes more unpredictable as the impact of process and supply voltage variations being more significant at lower voltages. This paper presents a comparative study among three techniques for designing digital circuits operating at ultra-low voltages, i.e., Schmitt-triggered gate structure, delay insensitive asynchronous logic, and Fully-Depleted Silicon-on-Insulator technology. Results show that despite the trade offs, all eight combinations of these techniques are viable for designing ultra-low voltage circuits. For a given application, the optimum circuit design can be selected from these combinations based on the lowest voltage, the dynamic range, the power budget, the performance requirement, and the available semiconductor process node.

  4. CFD Simulation of Transonic Flow in High-Voltage Circuit Breaker

    Directory of Open Access Journals (Sweden)

    Xiangyang Ye

    2012-01-01

    Full Text Available A high-voltage circuit breaker is an indispensable piece of equipment in the electric transmission and distribution systems. Transonic flow typically occurs inside breaking chamber during the current interruption, which determines the insulating characteristics of gas. Therefore, accurate compressible flow simulations are required to improve the prediction of the breakdown voltages in various test duties of high-voltage circuit breakers. In this work, investigation of the impact of the solvers on the prediction capability of the breakdown voltages in capacitive switching is presented. For this purpose, a number of compressible nozzle flow validation cases have been presented. The investigation is then further extended for a real high-voltage circuit breaker geometry. The correlation between the flow prediction accuracy and the breakdown voltage prediction capability is identified.

  5. A dual-mode phase-shift modulation control scheme for voltage multiplier based X-ray power supply

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, S [School of Electrical and Electronics Engineering, University Sains Malaysia, 14300 Nibong Tebal, Pulau Pinang (Malaysia); Besar, R; Venkataseshaiah, C, E-mail: shahidsidu@hotmail.co [Faculty of Engineering and Technology, Multimedia University, 75450 Melaka (Malaysia)

    2010-05-15

    This paper proposes a dual-mode phase-shift modulation control scheme for series resonant inverter fed voltage multiplier (VM) based X-ray power supply. In this control scheme the outputs voltage of two parallel connected series resonant inverters are mixed before supplying to VM circuit. The output voltage of the power supply is controlled by varying the phase-shift between the output voltages of two inverters. In order to achieve quick rise of output voltage, the power supply is started with zero phase-shift and as the output voltage reaches 90% of the target voltage, the phase-shift is increased to a value which corresponds to target output voltage to prevent overshoot. The proposed control scheme has been shown to have good performance. Experimental results based on the scaled-down laboratory prototype are presented to validate the effectiveness of proposed dual-mode phase shift modulation control scheme.

  6. 30 CFR 75.901 - Protection of low- and medium-voltage three-phase circuits used underground.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of low- and medium-voltage three... Underground Low- and Medium-Voltage Alternating Current Circuits § 75.901 Protection of low- and medium-voltage three-phase circuits used underground. (a) Low- and medium-voltage three-phase alternating-current...

  7. Note: Complementary metal-oxide-semiconductor high voltage pulse generation circuits.

    Science.gov (United States)

    Sun, Jiwei; Wang, Pingshan

    2013-10-01

    We present two types of on-chip pulse generation circuits. The first is based on CMOS pulse-forming-lines (PFLs). It includes a four-stage charge pump, a four-stacked-MOSFET switch and a 5 mm long PFL. The circuit is implemented in a 0.13 μm CMOS process. Pulses of ~1.8 V amplitude with ~135 ps duration on a 50 Ω load are obtained. The obtained voltage is higher than 1.6 V, the rated operating voltage of the process. The second is a high-voltage Marx generator which also uses stacked MOSFETs as high voltage switches. The output voltage is 11.68 V, which is higher than the highest breakdown voltage (~10 V) of the CMOS process. These results significantly extend high-voltage pulse generation capabilities of CMOS technologies.

  8. Clipper circuit of pulse modulator used for klystron-5045 power supply

    CERN Document Server

    Akimov, A V

    2001-01-01

    While the operation of modulator to the pulsed transformer of klystron-5045, current through the primary winding of the pulse transformer (PT) continues to flow even upon the end of the klystron voltage operating pulse. This is determined by an energy stored in magnetizing inductance. The prolongation of magnetizing current passing process simultaneously with the premature choking of thyratron can cause high voltage of inverse polarity at the klystron, which cause the destruction of the cathode. We have considered the possibility of shortening time of magnetizing current passage for the charge of reasonable choice of clipper circuit parameters. The behavior of clipper circuit was studied in modulators used for the VEPP-5 (BINP, Russia) preinjector klystron power supply. The optimum operation run of the circuit was selected and its design features are described.

  9. High-voltage integrated transmitting circuit with differential driving for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Færch, Kjartan Ullitz

    2016-01-01

    In this paper, a high-voltage integrated differential transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is presented. Due to its application, area and power consumption are critical and need to be minimized. The circuitry...... is designed and implemented in AMS 0.35 μ m high-voltage process. Measurements are performed on the fabricated integrated circuit in order to assess its performance. The transmitting circuit consists of a low-voltage control logic, pulse-triggered level shifters and a differential output stage that generates...... pulses at differential voltage levels of 60, 80 and 100 V, a frequency up to 5 MHz and a measured driving strength of 2.03 V/ns with the CMUT electrical model connected. The total on-chip area occupied by the transmitting circuit is 0.18 mm2 and the power consumption at the ultrasound scanner operation...

  10. Low-Voltage Process-Compensated VCO with On-Chip Process Monitoring and Body-Biasing Circuit Techniques

    OpenAIRE

    Ueno, Ken; Hirose, Tetsuya; Asai, Tetsuya; Amemiya, Yoshihito

    2009-01-01

    A voltage-controlled oscillator (VCO) tolerant to process variations at lower supply voltage was proposed. The circuit consists of an on-chip threshold-voltage-monitoring circuit, a current-source circuit, a body-biasing control circuit, and the delay cells of the VCO. Because variations in low-voltage VCO frequency are mainly determined by that of the current in delay cells. a current-compensation technique was adopted by using an on-chip threshold-voltage-monitoring circuit and body-biasing...

  11. A Voltage Doubler Circuit to Extend the Soft-switching Range of Dual Active Bridge Converters

    DEFF Research Database (Denmark)

    Qin, Zian; Shen, Yanfeng; Wang, Huai;

    2017-01-01

    A voltage doubler circuit is realized to extend the soft-switching range of Dual Active Bridge (DAB) converters. No extra hardware is added to the DAB to form this circuit, since it is composed of the dc blocking capacitor and the low side full bridge converter, which already exist in DAB. With t...

  12. 30 CFR 75.802 - Protection of high-voltage circuits extending underground.

    Science.gov (United States)

    2010-07-01

    ... underground. 75.802 Section 75.802 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as...

  13. Series-connected substrate-integrated lead-carbon hybrid ultracapacitors with voltage-management circuit

    Indian Academy of Sciences (India)

    A Banerjee; R Srinivasan; A K Shukla

    2015-02-01

    Cell voltage for a fully charged-substrate-integrated lead-carbon hybrid ultracapacitor is about 2.3 V. Therefore, for applications requiring higher DC voltage, several of these ultracapacitors need to be connected in series. However, voltage distribution across each series-connected ultracapacitor tends to be uneven due to tolerance in capacitance and parasitic parallel-resistance values. Accordingly, voltage-management circuit is required to protect constituent ultracapacitors from exceeding their rated voltage. In this study, the design and characterization of the substrate-integrated lead-carbon hybrid ultracapacitor with co-located terminals is discussed. Voltage-management circuit for the ultracapacitor is presented, and its effectiveness is validated experimentally.

  14. Interface circuit with adjustable bias voltage enabling maximum power point tracking of capacitive energy harvesting devices

    Science.gov (United States)

    Wei, J.; Lefeuvre, E.; Mathias, H.; Costa, F.

    2016-12-01

    The operation analysis of a new interface circuit for electrostatic vibration energy harvesting with adjustable bias voltage is carried out in this paper. Two configurations determined by the open or closed states of an electronic switch are examined. The increase of the voltage across a biasing capacitor, occurring when the switch is open, is proved theoretically and experimentally. With the decrease of this biasing voltage which occurs naturally when the switch is closed due to imperfections of the circuit, the bias voltage can be maintained close to a target value by appropriate ON and OFF control of the switch. As the energy converted by the variable capacitor on each cycle depends on the bias voltage, this energy can be therefore accurately controlled. This feature opens up promising perspectives for optimization the power harvested by electrostatic devices. Simulation results with and without electromechanical coupling effect are presented. In experimental tests, a simple switch control enabling to stabilize the bias voltage is described.

  15. Voltage-Mode All-Pass Filters Including Minimum Component Count Circuits

    Directory of Open Access Journals (Sweden)

    Sudhanshu Maheshwari

    2007-01-01

    Full Text Available This paper presents two new first-order voltage-mode all-pass filters using a single-current differencing buffered amplifier and four passive components. Each circuit is compatible to a current-controlled current differencing buffered amplifier with only two passive elements, thus resulting in two more circuits, which employ a capacitor, a resistor, and an active element, thus using a minimum of active and passive component counts. The proposed circuits possess low output impedance, and hence can be easily cascaded for voltage-mode systems. PSPICE simulation results are given to confirm the theory.

  16. Analysis and calculation of lightning-induced voltages in aircraft electrical circuits

    Science.gov (United States)

    Plumer, J. A.

    1974-01-01

    Techniques to calculate the transfer functions relating lightning-induced voltages in aircraft electrical circuits to aircraft physical characteristics and lightning current parameters are discussed. The analytical work was carried out concurrently with an experimental program of measurements of lightning-induced voltages in the electrical circuits of an F89-J aircraft. A computer program, ETCAL, developed earlier to calculate resistive and inductive transfer functions is refined to account for skin effect, providing results more valid over a wider range of lightning waveshapes than formerly possible. A computer program, WING, is derived to calculate the resistive and inductive transfer functions between a basic aircraft wing and a circuit conductor inside it. Good agreement is obtained between transfer inductances calculated by WING and those reduced from measured data by ETCAL. This computer program shows promise of expansion to permit eventual calculation of potential lightning-induced voltages in electrical circuits of complete aircraft in the design stage.

  17. Short-circuit protection of LLC resonant converter using voltages across resonant tank elements

    Directory of Open Access Journals (Sweden)

    Denys Igorovych Zaikin

    2015-06-01

    Full Text Available This paper describes two methods for the short-circuit protection of the LLC resonant converter. One of them uses the voltage across the capacitor and the other uses the voltage across the inductor of the resonant tank. These voltages can be processed (integrated or differentiated to recover the resonant tank current. The two circuits illustrated in the described methods make it possible to develop a robust LLC converter design and to avoid using lossy current measurement elements, such as a shunt resistor or current transformer. The methods also allow measuring resonant tank current without breaking high-current paths and connecting the measuring circuit in parallel with the inductor or capacitor of the resonant tank. Practical implementations of these indirect current measurements have been experimentally tested for the short-circuit protection of the 1600 W LLC converter.

  18. High-voltage integrated transmitting circuit with differential driving for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Færch, Kjartan Ullitz;

    2016-01-01

    In this paper, a high-voltage integrated differential transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is presented. Due to its application, area and power consumption are critical and need to be minimized. The circuitry...... is designed and implemented in AMS 0.35 μ m high-voltage process. Measurements are performed on the fabricated integrated circuit in order to assess its performance. The transmitting circuit consists of a low-voltage control logic, pulse-triggered level shifters and a differential output stage that generates...... conditions is 0.936 mW including the load. The integrated circuits measured prove to be consistent and robust to local process variations by measurements....

  19. SOI-Based High-Voltage, High-Temperature Integrated Circuit Gate Driver for SiC-Based Power FETs

    Energy Technology Data Exchange (ETDEWEB)

    Huque, Mohammad A [ORNL; Tolbert, Leon M [ORNL; Blalock, Benjamin [University of Tennessee, Knoxville (UTK); Islam, Syed K [University of Tennessee, Knoxville (UTK)

    2010-01-01

    Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimizing system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8-m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

  20. Maximum Output Power Control Using Short-Circuit Current and Open-Circuit Voltage of a Solar Panel

    Science.gov (United States)

    Kato, Takahiro; Miyake, Takuma; Tashima, Daisuke; Sakoda, Tatsuya; Otsubo, Masahisa; Hombu, Mitsuyuki

    2012-10-01

    A control method to optimize the output power of a solar cell is necessary because the output of a solar cell strongly depends on solar radiation. We here proposed two output power control methods using the short-circuit current and open-circuit voltage of a solar panel. One of them used a current ratio and a voltage ratio (αβ control), and the other used a current ratio and a short-circuit current-electric power characteristic coefficient (αγ control). The usefulness of the αβ and the αγ control methods was evaluated. The results showed that the output power controlled by our proposed methods was close to the maximum output power of a solar panel.

  1. A new ROIC with high-voltage protection circuit of HgCdTe e-APD FPA for passive and active imaging

    Science.gov (United States)

    Chen, Guoqiang; Zhang, Junling; Wang, Pan; Zhou, Jie; Gao, Lei; Ding, Ruijun

    2012-12-01

    HgCdTe electrons initiated avalanche photodiodes (e-APDs) in linear multiplication mode can be used for high speed applications such as active imaging. A readout integrated circuit of e-APD FPA is designed for dual mode passive/active imaging system. Unit cell circuit architecture of ROIC includes a high voltage protection module, a Sample-Hold circuit module, a comparator, output driver stage and a integrator module which includes a amplifier and three capacitors. Generally, APD FPA works at reversed bias such as 5V-15V in active imaging mode, and pixels' dark currents increase exponentially as the reverse-bias voltage is increased. Some cells of ROIC may be short to high voltage because of avalanche breakdown of diodes. If there is no protection circuit, the whole ROIC would be burnt out. Thus a protection circuit module introduced in every ROIC cell circuit is necessary to make sure the rest units of ROIC can still work. Conventional 5V CMOS process is applied to implement the high voltage protection with the small area other than LDMOS in high voltage BCD process in the limited 100μm×100μm pitch area. In integrator module, three integration capacitors are included in the ROIC to provide switchable well capacity. One of them can be shared in two modes in order to save area. Constraints such as pixel area and power lead us design toward a simple one-stage cascade operational transconductance amplifier (OTA) as pre-amplifier which can avoid potential instability caused by inaccuracy of MOSFET Model at 77K.

  2. Design and Implementation of Voltage-Mode MIN/MAX Circuits

    Directory of Open Access Journals (Sweden)

    M. Soleimani

    2015-12-01

    Full Text Available In this paper, a general architecture for analog implementation of MIN/MAX and other rank order circuits is presented. Based on general architecture, proposed MIN/MAX circuits are implemented. The proposed circuits are composed of a differential amplifier with merged n-inputs and a MCSAL circuit to choose the desired input. The advantages of the proposed structure are simplicity, very high resolution, very low supply voltage requirements, very low output resistor, low power dissipation, low active area and simple expansion for multiple inputs by adding only three transistors for each extra input. The post-layout simulation results of proposed circuits are presented by HSPICE software in 0.35-µm CMOS process technology. The total power dissipation of proposed circuits is about 110-µW. Also, the total active area is about 550-µm2 for five-input proposed circuits, and would be negligibly increased for each extra input.

  3. 30 CFR 77.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

    Science.gov (United States)

    2010-07-01

    ... circuits on high-voltage resistance grounded systems. On and after September 30, 1971, all high-voltage, resistance grounded systems shall include a fail safe ground check circuit or other no less effective device... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits on...

  4. 30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits on high-voltage resistance grounded systems. 75.803 Section 75.803 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance...

  5. Effect of Circuit Breaker Shunt Resistance on Chaotic Ferroresonance in Voltage Transformer

    Directory of Open Access Journals (Sweden)

    RADMANESH, H.

    2010-08-01

    Full Text Available Ferroresonance or nonlinear resonance is a complex electrical phenomenon, which may cause over voltages and over currents in the electrical power system which endangers the system reliability and continuous safe operating. This paper studies the effect of circuit breaker shunt resistance on the control of chaotic ferroresonance in a voltage transformer. It is expected that this resistance generally can cause ferroresonance dropout. For confirmation this aspect Simulation has been done on a one phase voltage transformer rated 100VA, 275kV. The magnetization characteristic of the transformer is modeled by a single-value two-term polynomial with q=7. The simulation results reveal that considering the shunt resistance on the circuit breaker, exhibits a great mitigating effect on ferroresonance over voltages. Significant effect on the onset of chaos, the range of parameter values that may lead to chaos along with ferroresonance voltages has been obtained and presented.

  6. A Protection Circuit for DC-DC Converter with Voltage Doubler

    Directory of Open Access Journals (Sweden)

    D.Elangovan

    2012-12-01

    Full Text Available This paper proposes a method to obtain a protected voltage gain by employing a protection circuit for the voltage doubler or multiplier circuit in an isolated tyde DC-DC Converter. The entire set up consists of a phase shift converter with a protected bridge/voltage doubler rectifier on the output side. The operating frequency of the phase shift converter is 20-25kHz (depending on the requirement of the application which is high enough to improve the efficiency. Ferrite core transformer is used in place of ordinary air core transformer, which is small in size with number of turns of the transformer is reduced and the overall power density is increased. The doubler circuit consists of electrolytic capacitors, which are rated at 400V in order to comply with IEC65 requirements. This paper proposes an “electrolytic capacitor protection circuit”, which enables the voltage rating of the electrolytics to be reduced to 250V. This circuit results in cost savings of more than 50% in the price of the electrolytic filter capacitors. The circuits were simulated using PSPICE SOFTWARE and the following results were obtained. For an input voltage of 200V, an output of 200V and400V were obtained in bridge mode and doubler mode respectively.

  7. Simulation Analysis for Opening Performance of Medium Voltage Vacuum Circuit Breaker Based on ADAMS and Maxwell

    Directory of Open Access Journals (Sweden)

    Ding Xianliang

    2017-01-01

    Full Text Available The circuit breakers play a important role in control and protect the power systemand the vacuum circuit breaker has beenwidely used in the field of medium voltage with its excellent opening performance.Virtual prototyping technology is alsobecamemore and more popularin design and optimization of the vacuum circuit breaker. In this paper, the electromagnetic simulation software Ansoft Maxwell is used to analyze the electric repulsion of the circuit breaker in the case of open the rated short circuit breaking current. The 3D model that wasbuilt by CREOis imported into ADAMS. Thenconstraints, contact force, and the electric repulsion forcethat was analysezed in Ansoft Maxwell is added into the 3D model.Therefore, we can carry on the multi-body dynamics simulation to the 3D model. Then We can get the openingperformance of the vacuum circuit breakerin the condition of open circuit rated short circuit breaking current. The simulation results show that the circuit breaker can still meet the performance requirements in the condition of open circuit rated short circuit breaking current.

  8. Simple and Universal Current Modulator Circuit for Indoor Mobile Free-Space-Optical Communications Testing

    Directory of Open Access Journals (Sweden)

    Stanislav Hejduk

    2014-01-01

    Full Text Available The use of LED for illumination and communication together is more and more interesting with the increasing deployment of LEDs to our homes and industrial buildings. Modulation of this kind of light sources is difficult because of high voltage and current demands. Since the LED configurations and values of current and voltage are different, our universal modulator has to be able to operate even under these circumstances. This paper proposes simple and universal current modulator for LED lighting modulation for frequencies around 1MHz. Main objective is to allow initial testing of different types of High Power LEDs and different photodetector configurations and circuits in diffusive based Free-Space-Optical networks. In the experimental part we also compare results for some different types of LED light sources.

  9. Low-power operation using self-timed circuits and adaptive scaling of the supply voltage

    DEFF Research Database (Denmark)

    Nielsen, Lars Skovby; Niessen, C.; Sparsø, Jens

    1994-01-01

    Recent research has demonstrated that for certain types of applications like sampled audio systems, self-timed circuits can achieve very low power consumption, because unused circuit parts automatically turn into a stand-by mode. Additional savings may be obtained by combining the self...... of voltage scaling has been used previously in synchronous circuits, and the contributions of the present paper are: 1) the combination of supply scaling and self-timed circuitry which has some unique advantages, and 2) the thorough analysis of the power savings that are possible using this technique.>......-timed circuits with a mechanism that adaptively adjusts the supply voltage to the smallest possible, while maintaining the performance requirements. This paper describes such a mechanism, analyzes the possible power savings, and presents a demonstrator chip that has been fabricated and tested. The idea...

  10. Background voltage distortion influence on power electric systems in the presence of the Steinmetz circuit

    Energy Technology Data Exchange (ETDEWEB)

    Sainz, Luis; Pedra, Joaquin [Department of Electrical Engineering, ETSEIB-UPC, Av. Diagonal 647, 08028 Barcelona (Spain); Caro, Manuel [IDOM Ingenieria y Arquitectura, C. Barcas 2, 46002 Valencia (Spain)

    2009-01-15

    In traction systems, it is usual to connect reactances in delta configuration with single-phase loads to reduce voltage unbalances and avoid electric system operation problems. This set is known as Steinmetz circuit. Parallel and series resonances can occur due to the capacitive reactance of the Steinmetz circuit and affect power quality. In this paper, the series resonance ''observed'' from the supply system is numerically located. The study of this resonance is important to avoid problems due to background voltage distortion. Experimental measurements are also presented to validate the obtained numerical results. (author)

  11. On-line Monitoring System based on Vibration Signal of High Voltage Circuit Breaker

    Directory of Open Access Journals (Sweden)

    Chao Fu

    2014-04-01

    Full Text Available High voltage circuit breaker is one of the most important switch apparatus in electrical power system. It play a role in the switch control, which can be used to switch the operating mode during normal operation (the equipment run or quit. In order to ensure the normal operation of the grid, it can be removed quickly when a malfunction on the device or circuit. Real-time online monitoring of high voltage circuit breaker can understand the running status, master the operation characteristics and its tend of development. As early as possible find the potential faults then take preventive measures timely, so as to ensure the reliable operation of power system. Online monitoring of high voltage circuit breakers can reduce the premature or unnecessary maintenance and maintenance cost, improve pertinence of the maintenance firstly. Secondly, it can improve the life of the switching device and improve the reliability of electric power system significantly. In this paper, on-line monitoring system based on vibration signal of high voltage circuit breaker is presented

  12. Nonfullerene Tandem Organic Solar Cells with High Open-Circuit Voltage of 1.97 V.

    Science.gov (United States)

    Liu, Wenqing; Li, Shuixing; Huang, Jiang; Yang, Shida; Chen, Jiehuan; Zuo, Lijian; Shi, Minmin; Zhan, Xiaowei; Li, Chang-Zhi; Chen, Hongzheng

    2016-11-01

    Small-molecule nonfullerene-based tandem organic solar cells (OSCs) are fabricated for the first time by utilizing P3HT:SF(DPPB)4 and PTB7-Th:IEIC bulk heterojunctions as the front and back subcells, respectively. A power conversion efficiency of 8.48% is achieved with an ultrahigh open-circuit voltage of 1.97 V, which is the highest voltage value reported to date among efficient tandem OSCs.

  13. Operating Circuit Fault Diagnosis of High Voltage Circuit Breaker%高压断路器操作回路的故障诊断

    Institute of Scientific and Technical Information of China (English)

    赵红宇; 龙树峰

    2015-01-01

    This paper analyzes and studies the fault diagnosis operation requirements of high voltage circuit breaker operation circuit and the fault diagnosis method of high voltage circuit breaker.%本文对高压断路器操作回路的故障诊断操作要求和高压断路器操作回路的故障诊断方法进行了分析和研究。

  14. Complemenary body driving - a low voltage analog circuit technique for SOI

    Science.gov (United States)

    Mojarradi, M. M.; Terry, S.; Blalock, B. J.; Yong, L.; Dufrene, B.

    2002-01-01

    This paper describes several analog circuit primitives that utilize the body terminal as a signal port. A cascode current mirror that can operate with an input and output voltage of 200 mV; and a rail-to-rail, constant transconductance gain block capable of 1 V operation are presented. These circuits have been implemented in a standard 0.351 partially-depleted Silicon-on-Insulator (PDSOI) CMOS process and should find wide application in next-generation analog circuit designs.

  15. ZnO(CdS)/CIS/Mo solar cells characterized by modulation capacitance voltage measurements

    Energy Technology Data Exchange (ETDEWEB)

    Sinh, N.D.; Scheer, R.; Kliefoth, K.; Fuessel, W.; Fuhs, W. [Hahn-Meitner-Inst., Berlin (Germany)

    1997-12-31

    From Modulation Capacitance Voltage (MCV) measurements the authors determined a voltage V{sub s} of several hundred mV at the depletion region in CuInS{sub 2} under PV generator and short circuit working conditions. In this solar cell type electron transport through shallow gap states in the CdS interlayer enhances interface recombination which increases the dark current. The CuInSe{sub 2} solar cells show a different behavior. In darkness, electron emission into the depletion region over a barrier of more than 500 mV was measured, and voltage losses while working as PV generator remain nearly constant below 60 mV. The authors interpret these results by a blocking CuInS{sub 2}/Mo contact and a band spike at the CdS/CuInSe{sub 2} junction.

  16. Ultra-low-voltage design of energy-efficient digital circuits

    CERN Document Server

    Reynders, Nele

    2015-01-01

    This book focuses on increasing the energy-efficiency of electronic devices so that portable applications can have a longer stand-alone time on the same battery. The authors explain the energy-efficiency benefits that ultra-low-voltage circuits provide and provide answers to tackle the challenges which ultra-low-voltage operation poses. An innovative design methodology is presented, verified, and validated by four prototypes in advanced CMOS technologies. These prototypes are shown to achieve high energy-efficiency through their successful functionality at ultra-low supply voltages.

  17. Battery open-circuit voltage estimation by a method of statistical analysis

    NARCIS (Netherlands)

    Snihir, Iryna; Rey, William; Verbitskiy, Evgeny; Belfadhel-Ayeb, Afifa; Notten, Peter H.L.

    2006-01-01

    The basic task of a battery management system (BMS) is the optimal utilization of the stored energy and minimization of degradation effects. It is critical for a BMS that the state-of-charge (SoC) be accurately determined. Open-circuit voltage (OCV) is directly related to the state-of-charge of the

  18. Transistorized Marx bank pulse circuit provides voltage multiplication with nanosecond rise-time

    Science.gov (United States)

    Jung, E. A.; Lewis, R. N.

    1968-01-01

    Base-triggered avalanche transistor circuit used in a Marx bank pulser configuration provides voltage multiplication with nanosecond rise-time. The avalanche-mode transistors replace conventional spark gaps in the Marx bank. The delay time from an input signal to the output signal to the output is typically 6 nanoseconds.

  19. Improvement of high-voltage staircase drive circuit waveform for high-intensity therapeutic ultrasound

    Science.gov (United States)

    Tamano, Satoshi; Jimbo, Hayato; Azuma, Takashi; Yoshizawa, Shin; Fujiwara, Keisuke; Itani, Kazunori; Umemura, Shin-Ichiro

    2016-07-01

    Recently, in the treatment of diseases such as cancer, noninvasive or low-invasive modality, such as high-intensity focused ultrasound (HIFU), has been put into practice as an alternative to open surgery. HIFU induces thermal ablation of the target tissue to be treated. To improve the efficiency of HIFU, we have proposed a “triggered-HIFU” technique, which uses the combination of a short-duration, high-voltage transmission and a long-duration, medium-voltage transmission. In this method, the transmission device must endure high peak voltage for the former and the high time-average power for the latter. The triggered-HIFU sequence requires electronic scanning of the HIFU focus to maximize its thermal efficiency. Therefore, the transmission device must drive an array transducer with the number of elements on the order of a hundred or more, which requires that each part of the device that drives each element must be compact. The purpose of this work is to propose and construct such a transmission device by improving the staircase drive circuit, which we previously proposed. The main point of improvement is that both N and P MOSFETs are provided for each staircase voltage level instead of only one of them. Compared with the previous ultrasonic transmission circuit, high-voltage spikes were significantly reduced, the power consumption was decreased by 26.7%, and the transmission circuit temperature rise was decreased by 14.5 °C in the triggered-HIFU heating mode.

  20. Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery

    Institute of Scientific and Technical Information of China (English)

    CHENG Zai-Jun; SAN Hai-Sheng; CHEN Xu-Yuan; LIU Bo; FENG Zhi-Hong

    2011-01-01

    A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated.Under the irradiation of a 4× 4mm2 planar solid 63Ni source with an activity of 2mCi,the open-circuit voltage Voc of the fabricated single 2x2mm2 cell reaches as high as 1.62 V,the short-circuit current density Jsc is measured to be 16nA/cm2.The microbattery has a fill factor of 55%,and the energy conversion effciency of beta radiation into electricity reaches to 1.13%.The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.

  1. Modeling of the Voltage Waves in the LHC Main Dipole Circuits

    CERN Document Server

    Ravaioli, E; Formenti, F; Steckert, J; Thiesen, H; Verweij, A

    2012-01-01

    When a fast power abort is triggered in the LHC main dipole chain, voltage transients are generated at the output of the power converter and across the energy-extraction switches. The voltage waves propagate through the chain of 154 superconducting dipoles and can have undesired effects leading to spurious triggering of the quench protection system and firing of the quench heaters. The phase velocity of the waves travelling along the chain changes due to the inhomogeneous AC behavior of the dipoles. Furthermore, complex phenomena of reflection and superposition are present in the circuit. For these reasons analytical calculations are not sufficient for properly analyzing the circuit behavior after a fast power abort. The transients following the switch-off of the power converter and the opening of the switches are analyzed by means of a complete electrical model, developed with the Cadence© suite (PSpice© based). The model comprises all the electrical components of the circuit, additional components simula...

  2. Design and validation of a high-voltage levitation circuit for electrostatic accelerometers.

    Science.gov (United States)

    Li, G; Wu, S C; Zhou, Z B; Bai, Y Z; Hu, M; Luo, J

    2013-12-01

    A simple high-voltage circuit with a voltage range of 0 to 900 V and an open-loop bandwidth of 11 kHz is realized by using an operational amplifier and a MOSFET combination. The circuit is used for the levitation of a test mass of 71 g, suspended below the top-electrodes with a gap distance of 57 μm, so that the performance of an electrostatic accelerometer can be tested on the ground. The translation noise of the accelerometer, limited by seismic noise, is about 4 × 10(-8) m/s(2)/Hz(1/2) at 0.1 Hz, while the high-voltage coupling noise is one-order of magnitude lower.

  3. Thermodynamic derivation of open circuit voltage in vanadium redox flow batteries

    Science.gov (United States)

    Pavelka, Michal; Wandschneider, Frank; Mazur, Petr

    2015-10-01

    Open circuit voltage of vanadium redox flow batteries is carefully calculated using equilibrium thermodynamics. This analysis reveals some terms in the Nernst relation which are usually omitted in literature. Due to the careful thermodynamic treatment, all uncertainties about the form of Nernst relation are removed except for uncertainties in activity coefficients of particular species. Moreover, it is shown (based again on equilibrium thermodynamics) that batteries with anion-exchange membranes follow different Nernst relation than batteries with cation-exchange membranes. The difference is calculated, and it is verified experimentally that the formula for anion-exchange membranes describes experiments with anion-exchange membranes better than the corresponding formula for cation-exchange membranes. In summary, careful thermodynamic calculation of open circuit voltage of vanadium redox flow batteries is presented, and the difference between voltage for anion-exchange and cation-exchange membranes is revealed.

  4. Effect of polymer aggregation on the open circuit voltage in organic photovoltaic cells: aggregation-induced conjugated polymer gel and its application for preventing open circuit voltage drop.

    Science.gov (United States)

    Kim, Bong-Gi; Jeong, Eun Jeong; Park, Hui Joon; Bilby, David; Guo, L Jay; Kim, Jinsang

    2011-03-01

    To investigate the structure-dependent aggregation behavior of conjugated polymers and the effect of aggregation on the device performance of conjugated polymer photovoltaic cells, new conjugated polymers (PVTT and CN-PVTT) having the same regioregularity but different intermolecular packing were prepared and characterized by means of UV-vis spectroscopy and atomic force microscopy (AFM). Photovoltaic devices were prepared with these polymers under different polymer-aggregate conditions. Polymer aggregation induced by thermal annealing increases the short circuit current but provides no advantage in the overall power conversion efficiency because of a decrease in the open circuit voltage. The device fabricated from a pre-aggregated polymer suspension, acquired from ultrasonic agitation of a conjugated polymer gel, showed enhanced performance because of better phase separation and reduced recombination between polymer/PCBM.

  5. Distance protection of multiple-circuit shared tower transmission lines with different voltages. Part II: Fault loop impedance

    DEFF Research Database (Denmark)

    Silva, Filipe Miguel Faria da; Bak, Claus Leth

    2017-01-01

    Multiple-circuit transmission lines combining different voltage levels in one tower present extra challenges when setting a protection philosophy, as faults between voltage levels are possible. In this paper, the fault loop impedance of combined faults is compared with the fault loop impedance...... of single-phase-to-ground faults at the higher voltage level of the multiple-circuit line and it is demonstrated that they are similar for high short-circuit powers; however, the fault loop impedance of a combined fault may increase substantially as the short-circuit power of the system decreases......-phase-to-ground faults are also capable of protecting the line against combined faults, being only advisable to increase the resistive limit of the protection zone if the network has lower short-circuit power. If the length of the line at lower voltage level is less than of the lien at higher voltage level...

  6. A band-gap voltage reference for interface circuit of microsensor

    Institute of Scientific and Technical Information of China (English)

    CAO Yi-jiang; XIAO Fei; ZHANG Er-dong

    2010-01-01

    A high performance CMOS band-gap voltage reference circuit that can be used in interface integrated circuit of microsenser and compatible with 0.6 μm (double poly) mix process is proposed in this paper.The circuit can be employed in the range of 1.8-8 V and carry out the first-order PTAT (proportional to absolute temperature) temperature compensation.Through using a two-stage op-amp with a NMOS input pair as a negative feedback op-amp,the PSRR (power supply rejection ratio) of the entire circuit is increased,and the temperature coefficient of reference voltage is decreased.Results from HSPICE simulation show that the PSRR is -72.76 dB in the condition of low-frequency,the temperature coefficient is 2.4×10-6 in the temperature range from-10 ℃ to 90℃ and the power dissipation is only 14 μW when the supply voltage is 1.8 V.

  7. Nonlinear resonance converse magnetoelectric effect modulated by voltage for the symmetrical magnetoelectric laminates under magnetic and thermal loadings

    Science.gov (United States)

    Zhou, Hao-Miao; Liu, Hui; Zhou, Yun; Hu, Wen-Wen

    2016-12-01

    Based on the tri-layer symmetrical magnetoelectric laminates, a equivalent circuit for the nonlinear resonance converse magnetoelectric coupling effect is established. Because the nonlinear thermo-magneto-mechanical constitutive equations of magnetostrictive material were introduced, a converse magnetoelectric coefficient model was derived from the equivalent circuit, which can describe the influence of bias electric field, bias magnetic field and ambient temperature on the resonance converse magnetoelectric coupling effect. Especially, the model can well predict the modulation effect of bias electric field/voltage on the magnetism of magnetoelectric composite or the converse magnetoelectric coefficient, which is absolutely vital in applications. Both of the converse magnetoelectric coefficient and the resonance frequency predicted by the model have good agreements with the existing experimental results in qualitatively and quantitatively, and the validity of the model is confirmed. On this basis, according to the model, the nonlinear trends of the resonance converse magnetoelectric effect under different bias voltages, bias magnetic fields and ambient temperatures are predicted. From the results, it can be found that the bias voltage can effectively modulate the curve of the resonance converse magnetoelectric coefficient versus bias magnetic field, and then change the corresponding optimal bias magnetic field of the maximum converse magnetoelectric coefficient; with the increasing volume ratio of piezoelectric layers, the modulation effect of bias voltage becomes more obvious; under different bias magnetic fields, the modulation effect of bias voltage on the converse magnetoelectric effect has nonvolatility in a wide temperature region.

  8. Anomalous open-circuit voltage from a high-Tc superconducting dynamo

    Science.gov (United States)

    Bumby, C. W.; Jiang, Zhenan; Storey, J. G.; Pantoja, A. E.; Badcock, R. A.

    2016-03-01

    We report on the behavior of a high-Tc superconducting (HTS) homopolar dynamo which outputs a DC open-circuit voltage when the stator is in the superconducting state, but behaves as a conventional AC alternator when the stator is in the normal state. We observe that this time-averaged DC voltage arises from a change in the shape of the AC voltage waveform that is obtained from a normal conducting stator. The measured DC voltage is proportional to frequency, and decreases with increasing flux gap between the rotor magnet and the HTS stator wire. We observe that the DC output voltage decreases to zero at large flux gaps, although small differences between the normal-conducting and superconducting waveforms are still observed, which we attribute to screening currents in the HTS stator wire. Importantly, the normalised pulse shape is found to be a function of the rotor position angle only. Based on these observations, we suggest that the origin of this unexpected DC effect can be explained by a model first proposed by Giaever, which considers the impact of time-varying circulating eddy currents within the HTS stator wire. Such circulating currents form a superconducting shunt path which "short-circuits" the high field region directly beneath the rotor magnet, at those points in the cycle when the rotor magnet partially overlaps the superconducting stator wire. This reduces the output voltage from the device during these periods of the rotor cycle, leading to partial rectification of the output voltage waveform and hence the emergence of a time-averaged DC voltage.

  9. Simple buck/boost voltage regulator

    Science.gov (United States)

    Paulkovich, J.; Rodriguez, G. E.

    1980-01-01

    Circuit corrects low or high supply voltage, produces regulated output voltage. Circuit has fewer components because inductory/transformer combination and pulse-width modulator serve double duty. Regulator handles input voltage variation from as low as one half output voltage to as high as input transistor rating. Solar arrays, fuel cells, and thermionic generators might use this regulator.

  10. Pressure and Arc Voltage Measurement in a 252 kV SF6 Puffer Circuit Breaker

    Institute of Scientific and Technical Information of China (English)

    ZHONG Jianying; GUO Yujing; ZHANG Hao

    2016-01-01

    The pressure distribution in an arcing chamber is critically important for the SF6 puffer circuit breaker design.In this paper,the pressure variation of four locations in the nozzle was measured by piezoresistive and fiber optical pressure sensors at two current levels of 10 kA and 50 kA.An arc voltage measurement was also taken.The results demonstrate that using either type of sensor with a connecting tube is able to detect the fast pressure variation in circuit breakers,however the possible distortion and delay to the pressure transient caused by the tube need further study.

  11. FEA identification of high order generalized equivalent circuits for MF high voltage transformers

    CERN Document Server

    Candolfi, Sylvain; Cros, Jérôme; Aguglia, Davide

    2015-01-01

    This paper presents a specific methodology to derive high order generalized equivalent circuits from electromagnetic finite element analysis for high voltage medium frequency and pulse transformers by splitting the main windings in an arbitrary number of elementary windings. With this modeling approach, the dynamic model of the transformer over a large bandwidth is improved and the order of the generalized equivalent circuit can be adapted to a specified bandwidth. This efficient tool can be used by the designer to quantify the influence of the local structure of transformers on their dynamic behavior. The influence of different topologies and winding configurations is investigated. Several application examples and an experimental validation are also presented.

  12. Pressure and Arc Voltage Measurement in a 252 kV SF6 Puffer Circuit Breaker

    Science.gov (United States)

    Zhong, Jianying; Guo, Yujing; Zhang, Hao

    2016-05-01

    The pressure distribution in an arcing chamber is critically important for the SF6 puffer circuit breaker design. In this paper, the pressure variation of four locations in the nozzle was measured by piezoresistive and fiber optical pressure sensors at two current levels of 10 kA and 50 kA. An arc voltage measurement was also taken. The results demonstrate that using either type of sensor with a connecting tube is able to detect the fast pressure variation in circuit breakers, however the possible distortion and delay to the pressure transient caused by the tube need further study.

  13. Evaluation and Simulation of Black-box Arc Models for High-Voltage Circuit-Breakers

    OpenAIRE

    Gustavsson, Niklas

    2004-01-01

    The task for this Master thesis was to evaluate different black-box arc models for circuit-breakers with the purpose of finding criteria for the breaking ability. A black-box model is a model that requires no knowledge from the user of the underlying physical processes. Black-box arc models have been used in circuit-breaker development for many years. Arc voltages from tests made in the High Power Laboratory in Ludvika were used for validation, along with the resistance calculated at current ...

  14. Nonlinear interface between the piezoelectric harvesting structure and the modulating circuit of an energy harvester with a real storage battery.

    Science.gov (United States)

    Hu, Yuantai; Xue, Huan; Hu, Ting; Hu, Hongping

    2008-01-01

    This paper studies the performance of an energy harvester with a piezoelectric bimorph (PB) and a real electrochemical battery (ECB), both are connected as an integrated system through a rectified dc-dc converter (DDC). A vibrating PB can scavenge energy from the operating environment by the electromechanical coupling. A DDC can effectively match the optimal output voltage of the harvesting structure to the battery voltage. To raise the output power density of PB, a synchronized switch harvesting inductor (SSHI) is used in parallel with the harvesting structure to reverse the voltage through charge transfer between the output electrodes at the transition moments from closed-to open-circuit. Voltage reversal results in earlier arrival of rectifier conduction because the output voltage phases of any two adjacent closed-circuit states are just opposite each other. In principle, a PB is with a smaller, flexural stiffness under closed-circuit condition than under open-circuit condition. Thus, the PB subjected to longer closed-circuit condition will be easier to be accelerated. A larger flexural velocity makes the PB to deflect with larger amplitude, which implies that more mechanical energy will be converted into an electric one. Nonlinear interface between the vibrating PB and the modulating circuit is analyzed in detail, and the effects of SSHI and DDC on the charging efficiency of the storage battery are researched numerically. It was found that the introduction of a DDC in the modulating circuit and an SSHI in the harvesting structure can raise the charging efficiency by several times.

  15. Simulation of the Effects of Several Factors on Arc Plasma Behavior in Low Voltage Circuit Breaker

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    Taking into account the properties of the arc plasma and the electromagnetic, heat and radiative phenomena, commercial computational fluid dynamics software PHOENICS has been adapted and modified to develop the three-dimensional magneto-hydrodynamic (MHD)model of arc in a low voltage circuit breaker. The effects of the arc ignition location, venting size and gassing material on arc behavior have been investigated. The analysis of the results show that the arc velocity accelerates with the increase in the distance between arc ignition location and of the venting size, and the existence of the gassing material is beneficial to improving the arc voltage and reducing the arc temperature.

  16. A test technique for measuring lightning-induced voltages on aircraft electrical circuits

    Science.gov (United States)

    Walko, L. C.

    1974-01-01

    The development of a test technique used for the measurement of lightning-induced voltages in the electrical circuits of a complete aircraft is described. The resultant technique utilizes a portable device known as a transient analyzer capable of generating unidirectional current impulses similar to lightning current surges, but at a lower current level. A linear relationship between the magnitude of lightning current and the magnitude of induced voltage permitted the scaling up of measured induced values to full threat levels. The test technique was found to be practical when used on a complete aircraft.

  17. Design to conditioning circuits of dynamic compensation of reactive power in the intelligence voltage controller

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    <正>The paper introduces one design idea that making use of SCM to control Real-timely the dynamic compensation of reactive power.Firstly,design one Circuit to Sample the voltage and current,and by these datas we can easily calculate the power factor,and Voltage controller in the microcontroller to determine whether input the compensation capacitance according to the size of power factor,the paper also analyzes the principle of capacitance compensation and calculation method. Dynamic compensation for the entire process is quick and accurate.

  18. Digital measurement system for the LHC klystron high voltage modulator.

    CERN Document Server

    Mikkelsen, Anders

    Accelerating voltage in the Large Hadron Collider (LHC) is created by a means of 16 superconducting standing wave RF cavities, each fed by a 400MHz/300kW continuous wave klystron amplifier. Part of the upgrade program for the LHC long shutdown one is to replace the obsolete analogue current and voltage measurement circuitry located in the high voltage bunkers by a new, digital system, using ADCs and optical fibres. A digital measurement card is implemented and integrated into the current HV modulator oil tank (floating at -58kV) and interfaced to the existing digital VME boards collecting the data for several klystrons at the ground potential. Measured signals are stored for the logging, diagnostics and post-mortem analysis purposes.

  19. Low voltage drop plasma switch for inverter and modulator applications

    Science.gov (United States)

    Goebel, D. M.; Poeschel, R. L.; Schumacher, R. W.

    1993-08-01

    A low forward voltage drop plasma switch has been developed for high-efficiency inverter and modulator applications. The switch, called the HOLLOTRON, is based on a grid-controlled, thermionic hollow-cathode discharge. A low forward voltage drop (10-20 V) is achieved by operating the hollow-cathode discharge in a static gas pressure of xenon. The dense plasma generated in the Ba-oxide dispenser hollow cathode is spread over a relatively large control grid area by a diverging magnetic field superimposed on the discharge. Interruption of the discharge current at high current densities (≳4 A/cm2) over the grid area is achieved by biasing the control grid sufficiently negative with respect to the plasma. The HOLLOTRON switch has demonstrated voltage stand-off of up to 20 kV, switching times of ≤0.3 μs, and pulse repetition frequencies of 20 kHz at 50% duty.

  20. SEMICONDUCTOR INTEGRATED CIRCUITS: Sigma-delta modulator modeling analysis and design

    Science.gov (United States)

    Binjie, Ge; Xin'an, Wang; Xing, Zhang; Xiaoxing, Feng; Qingqin, Wang

    2010-09-01

    This paper introduces a new method for SC sigma-delta modulator modeling. It studies the integrator's different equivalent circuits in the integrating and sampling phases. This model uses the OP-AMP input pair's tail current (I0) and overdrive voltage (von) as variables. The modulator's static and dynamic errors are analyzed. A group of optimized I0 and von for maximum SNR and power × area ratio can be obtained through this model. As examples, a MASH21 modulator for digital audio and a second order modulator for RFID baseband are implemented and tested, and they can achieve 91 dB and 72 dB respectively, which verifies the modeling and design criteria.

  1. Optimum design of phase opposition disposition pulse width modulation logic circuit for switching seven level cascaded half bridge inverter

    Directory of Open Access Journals (Sweden)

    Nentawe Y. Goshwe

    2016-06-01

    Full Text Available Theevolution of multilevel inverters (MLIs has made it possible to extract power from direct current (DC sources to alternating current (AC power. This paper presents the design of a novel phase opposition disposition pulse width modulation scheme (PODPWM logic circuit for a conventional single phase seven level cascaded H-Bridge (CHB inverter using Matlab/Simulink. The minimum switching logic circuit for the single phase seven level CHB inverter was obtained by modeling the logic equations that could be used with any number of levels depending on the number of modulating and carrier signals involved. The reduction in total harmonic distortion (THD of the output voltage for the MLI using low switching frequency at different modulation indixes is also investigated. The logic equations have made it easier to design a PODPWM circuit for any CHB inverter and the logic gates designed gave an optimum THD value of 16.73 % at modulation index of 0.20.

  2. Origin of the high open circuit voltage in planar heterojunction perovskite solar cells: Role of the reduced bimolecular recombination

    Science.gov (United States)

    Yang, Wenchao; Yao, Yao; Wu, Chang-Qin

    2015-03-01

    The high open circuit voltage is an attractive feature for the currently popular organic-inorganic hybrid perovskite solar cells. In this paper, by employing the macroscopic device model simulation, we investigate its origin for the planar heterojunction perovskite solar cells. Based on the calculated current density-voltage characteristics, it is revealed that compared to the excitonic solar cells, the fast thermal-activated exciton dissociation in the bulk due to the small exciton binding energy may improve the short circuit current and the fill factor, but its beneficial role on the open circuit voltage is marginal. The most significant contribution for the open circuit voltage comes from the reduced bimolecular recombination. In the perovskites, with the recombination prefactor many orders of magnitude smaller than that based on the Langevin's theory, the internal charge density level is significantly enhanced and the density gradient is removed, leading to the high quasi-Fermi level splitting and thus the small open circuit voltage loss. For the nonradiative recombination pathway due to the deep trap states, it may induce significant loss of open circuit voltage as the trap density is high, while for the moderately low density its effect on the open circuit voltage is small and negligible.

  3. The Effect of Current-Limiting Reactors on the Tripping of Short Circuits in High-Voltage Electrical Equipment

    Energy Technology Data Exchange (ETDEWEB)

    Volkov, M. S.; Gusev, Yu. P., E-mail: GusevYP@mpei.ru; Monakov, Yu. V.; Cho, Gvan Chun [National Research University “Moscow Power Engineering Institute,” (Russian Federation)

    2016-01-15

    The insertion of current-limiting reactors into electrical equipment operating at a voltage of 110 and 220 kV produces a change in the parameters of the transient recovery voltages at the contacts of the circuit breakers for disconnecting short circuits, which could be the reason for the increase in the duration of the short circuit, damage to the electrical equipment and losses in the power system. The results of mathematical modeling of the transients, caused by tripping of the short circuit in a reactive electric power transmission line are presented, and data are given on the negative effect of a current-limiting resistor on the rate of increase and peak value of the transient recovery voltages. Methods of ensuring the standard requirements imposed on the parameters of the transient recovery voltages when using current-limiting reactors in the high-voltage electrical equipment of power plants and substations are proposed and analyzed.

  4. A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure

    Institute of Scientific and Technical Information of China (English)

    Liu Jizhi; Chen Xingbi

    2009-01-01

    A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate.

  5. Research on The Mechanical State Parameter Extraction Method of High Voltage Circuit Breakers

    Directory of Open Access Journals (Sweden)

    Yang Tianxu

    2013-05-01

    Full Text Available High voltage circuit breakers play an important role in the power system. So it is necessary to implement the state detection of breakers in order to ensure stable and reliable running of the grid. The purpose of state detection is to provide reliable basis of maintenance by extracting mechanical state parameters accurately. This paper mainly focuses on the coil current signal feature extraction algorithm. To settle the problem of too much noise mixed with the current signal and signal distortion, the discrete wavelet transform algorithm is used to extract the coil current signal parameters. This paper also designs the FIR filter to extract stroke and speed parameters from travel-time waveform. The experiments show that the difference between the theoretical results and test results processed by the method in this paper is very small and the test results are able to accurately reflect operation states and mechanical features of high voltage circuit breakers.

  6. A low-power circuit for piezoelectric vibration control by synchronized switching on voltage sources

    CERN Document Server

    Shen, Hui; Ji, Hongli; Zhu, Kongjun; Balsi, Marco; Giorgio, Ivan; dell'Isola, Francesco

    2010-01-01

    In the paper, a vibration damping system powered by harvested energy with implementation of the so-called SSDV (synchronized switch damping on voltage source) technique is designed and investigated. In the semi-passive approach, the piezoelectric element is intermittently switched from open-circuit to specific impedance synchronously with the structural vibration. Due to this switching procedure, a phase difference appears between the strain induced by vibration and the resulting voltage, thus creating energy dissipation. By supplying the energy collected from the piezoelectric materials to the switching circuit, a new low-power device using the SSDV technique is proposed. Compared with the original self-powered SSDI (synchronized switch damping on inductor), such a device can significantly improve its performance of vibration control. Its effectiveness in the single-mode resonant damping of a composite beam is validated by the experimental results.

  7. Distance protection of multiple-circuit shared tower transmission lines with different voltages. Part I: Fault current magnitude

    DEFF Research Database (Denmark)

    Silva, Filipe Miguel Faria da; Bak, Claus Leth

    2017-01-01

    Multiple-circuit transmission lines combining different voltage levels in one tower present extra challenges when setting a protection philosophy, as faults between voltage levels are possible. This paper presents a detailed theoretical analysis of such combined faults, including the development...... of a formula for estimating the magnitude of the short-circuit current. It is demonstrated that if the faulted phase from the higher voltage level leads the faulted phase from the lower voltage level, a distance relay at the higher voltage level sees the fault in the forward direction, whereas a distance relay...... at the lower voltage level sees the fault in the reverse direction. The opposite happens if the lower voltage level leads the higher voltage level. It is also demonstrated that the magnitude of fault currents of combined faults is normally slightly larger than of equivalent single-phase-to-ground fault...

  8. Contrast distortion induced by modulation voltage in scanning capacitance microscopy

    Science.gov (United States)

    Chang, M. N.; Hu, C. W.; Chou, T. H.; Lee, Y. J.

    2012-08-01

    With a dark-mode scanning capacitance microscopy (SCM), we directly observed the influence of SCM modulation voltage (MV) on image contrasts. For electrical junctions, an extensive modulated area induced by MV may lead to noticeable changes in the SCM signal phase and intensity, resulting in a narrowed junction image and a broadened carrier concentration profile. This contrast distortion in SCM images may occur even if the peak-to-peak MV is down to 0.3 V. In addition, MV may shift the measured electrical junction depth. The balance of SCM signals components explain these MV-induced contrast distortions.

  9. Relationship of Open-Circuit Voltage to CdTe Hole Concentration and Lifetime

    Energy Technology Data Exchange (ETDEWEB)

    Duenow, Joel N.; Burst, James M.; Albin, David S.; Reese, Matthew O.; Jensen, Soren A.; Johnston, Steven W.; Kuciauskas, Darius; Swain, Santosh K.; Ablekim, Tursun; Lynn, Kelvin G.; Fahrenbruch, Alan L.; Metzger, Wyatt K.

    2016-11-01

    We investigate the correlation of bulk CdTe and CdZnTe material properties with experimental open-circuit voltage (Voc) through fabrication and characterization of diverse single-crystal solar cells with different dopants. Several distinct crystal types reach Voc >900 mV. Correlations are in general agreement with Voc limits modeled from bulk minority-carrier lifetime and hole concentration.

  10. Driving CZTS to the SQ Limit: Solving the Open Circuit Voltage Problem

    Energy Technology Data Exchange (ETDEWEB)

    Haight, Richard A. [IBM Research, Yorktown, NY (United States). Thomas J. Watson Research Center; McCandless, Brian E. [Univ. of Delaware, Newark, DE (United States); Kummel, Andrew C. [Univ. of California, San Diego, CA (United States); Gordon, Roy G. [Harvard Univ., Cambridge, MA (United States)

    2016-12-15

    A key objective of this 3 year research effort was to reduce the open circuit voltage (Voc) deficit, defined as the difference between the absorber band gap and the measured Voc to below 475mV from values at the beginning of this work of 630-730mV. To achieve this reduction, along with the attendant goals of higher Voc and efficiency, detailed studies into the fundamental understanding of existing limitations were undertaken.

  11. Controllable Threshold Voltage in Organic Complementary Logic Circuits with an Electron-Trapping Polymer and Photoactive Gate Dielectric Layer.

    Science.gov (United States)

    Dao, Toan Thanh; Sakai, Heisuke; Nguyen, Hai Thanh; Ohkubo, Kei; Fukuzumi, Shunichi; Murata, Hideyuki

    2016-07-20

    We present controllable and reliable complementary organic transistor circuits on a PET substrate using a photoactive dielectric layer of 6-[4'-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) doped into poly(methyl methacrylate) (PMMA) and an electron-trapping layer of poly(perfluoroalkenyl vinyl ether) (Cytop). Cu was used for a source/drain electrode in both the p-channel and n-channel transistors. The threshold voltage of the transistors and the inverting voltage of the circuits were reversibly controlled over a wide range under a program voltage of less than 10 V and under UV light irradiation. At a program voltage of -2 V, the inverting voltage of the circuits was tuned to be at nearly half of the supply voltage of the circuit. Consequently, an excellent balance between the high and low noise margins (NM) was produced (64% of NMH and 68% of NML), resulting in maximum noise immunity. Furthermore, the programmed circuits showed high stability, such as a retention time of over 10(5) s for the inverter switching voltage. Our findings bring about a flexible, simple way to obtain robust, high-performance organic circuits using a controllable complementary transistor inverter.

  12. Visual experience modulates spatio-temporal dynamics of circuit activation

    Directory of Open Access Journals (Sweden)

    Lang eWang

    2011-06-01

    Full Text Available Persistent reduction in sensory drive in early development results in multiple plastic changes of different cortical synapses. How these experience-dependent modifications affect the spatio-temporal dynamics of signal propagation in neocortical circuits is poorly understood. Here we demonstrate that brief visual deprivation significantly affects the propagation of electrical signals in the primary visual cortex. The spatio-temporal spread of circuit activation upon direct stimulation of its input layer (Layer 4 is reduced, as is the activation of Layer 2/3 – the main recipient of the output from Layer 4. Our data suggest that the decrease in spatio-temporal activation of L2/3 depends on reduced L4 output, and is not intrinsically generated within L2/3. The data shown here suggest that changes in the synaptic components of the visual cortical circuit result not only in alteration of local integration of excitatory and inhibitory inputs, but also in a significant decrease in overall circuit activation. Furthermore, our data indicate a differential effect of visual deprivation on L4 and L2/3, suggesting that while feedforward activation of L2/3 is reduced, its activation by long range, within layer inputs is unaltered. Thus, brief visual deprivation induces experience-dependent circuit re-organization by modulating not only circuit excitability, but also the spatio-temporal patterns of cortical activation within and between layers.

  13. Diagnosis of inverter switch open circuit faults based on neutral point voltage signal analysis

    Directory of Open Access Journals (Sweden)

    Liwei GUO

    Full Text Available Using the current signal to diagnose inverter faults information is apt to be affected by the load, noise and other factors; besides, it requires long diagnosis period with special algorithms and the diagnosis result is easily to be incorrect with no-load or light-load. Focusing on this issue, the logical analysis method is proposed for correlation logical analysis of leg neutral-point voltage and pulse signal to realize the diagnosis of the open circuit faults of inverter switches. The logical expressions of output signals of inverter power tube open-circuit faults is put forward and interrelated hardware circuit design is also elaborated. Delaying the rising edge of inverter power tube's pulse signal can effectively avoid the diagnosis error caused by the power tube's switching on/off. The experiment results show that the method can effectively diagnose the open-circuit faults of single-phase single power tube inverter in real-time and the hardware circuit cost is low, which shows it is effective and feasible.

  14. Flexible low-voltage organic integrated circuits with megahertz switching frequencies (Presentation Recording)

    Science.gov (United States)

    Zschieschang, Ute; Takimiya, Kazuo; Zaki, Tarek; Letzkus, Florian; Richter, Harald; Burghartz, Joachim N.; Klauk, Hagen

    2015-09-01

    A process for the fabrication of integrated circuits based on bottom-gate, top-contact organic thin-film transistors (TFTs) with channel lengths as short as 1 µm on flexible plastic substrates has been developed. In this process, all TFT layers (gate electrodes, organic semiconductors, source/drain contacts) are patterned with the help of high-resolution silicon stencil masks, thus eliminating the need for subtractive patterning and avoiding the exposure of the organic semiconductors to potentially harmful organic solvents or resists. The TFTs employ a low-temperature-processed gate dielectric that is sufficiently thin to allow the TFTs and circuits to operate with voltages of about 3 V. Using the vacuum-deposited small-molecule organic semiconductor 2,9-didecyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10 DNTT), TFTs with an effective field-effect mobility of 1.2 cm2/Vs, an on/off current ratio of 107, a width-normalized transconductance of 1.2 S/m (with a standard deviation of 6%), and a signal propagation delay (measured in 11-stage ring oscillators) of 420 nsec per stage at a supply voltage of 3 V have been obtained. To our knowledge, this is the first time that megahertz operation has been achieved in flexible organic transistors at supply voltages of less than 10 V. In addition to flexible ring oscillators, we have also demonstrated a 6-bit digital-to-analog converter (DAC) in a binary-weighted current-steering architecture, based on TFTs with a channel length of 4 µm and fabricated on a glass substrate. This DAC has a supply voltage of 3.3 V, a circuit area of 2.6 × 4.6 mm2, and a maximum sampling rate of 100 kS/s.

  15. Modulation of voltage-gated sodium channels hyperpolarizes the voltage threshold for activation in spinal motoneurones.

    Science.gov (United States)

    Power, Kevin E; Carlin, Kevin P; Fedirchuk, Brent

    2012-03-01

    Previous work has shown that motoneurone excitability is enhanced by a hyperpolarization of the membrane potential at which an action potential is initiated (V(th)) at the onset, and throughout brainstem-evoked fictive locomotion in the adult decerebrate cat and neonatal rat. Modeling work has suggested the modulation of Na(+) conductance as a putative mechanism underlying this state-dependent change in excitability. This study sought to determine whether modulation of voltage-gated sodium channels could induce V(th) hyperpolarization. Whole-cell patch-clamp recordings were made from antidromically identified lumbar spinal motoneurones in an isolated neonatal rat spinal cord preparation. Recordings were made with and without the bath application of veratridine, a plant alkaloid neurotoxin that acts as a sodium channel modulator. As seen in HEK 293 cells expressing Nav1.2 channels, veratridine-modified channels demonstrated a hyperpolarizing shift in their voltage-dependence of activation and a slowing of inactivation that resulted in an enhanced inward current in response to voltage ramp stimulations. In the native rat motoneurones, veratridine-modified sodium channels induced a hyperpolarization of V(th) in all 29 neonatal rat motoneurones examined (mean hyperpolarization: -6.6 ± 4.3 mV). V(th) hyperpolarization was not due to the effects on Ca(2+) and/or K(+) channels as blockade of these currents did not alter V(th). Veratridine also significantly increased the amplitude of persistent inward currents (PICs; mean increase: 72.5 ± 98.5 pA) evoked in response to slow depolarizing current ramps. However, the enhancement of the PIC amplitude had a slower time course than the hyperpolarization of V(th), and the PIC onset voltage could be either depolarized or hyperpolarized, suggesting that PIC facilitation did not mediate the V(th) hyperpolarization. We therefore suggest that central neuronal circuitry in mammals could affect V(th) in a mechanism similar to that of

  16. An Adaptive Estimation Scheme for Open-Circuit Voltage of Power Lithium-Ion Battery

    Directory of Open Access Journals (Sweden)

    Yun Zhang

    2013-01-01

    Full Text Available Open-circuit voltage (OCV is one of the most important parameters in determining state of charge (SoC of power battery. The direct measurement of it is costly and time consuming. This paper describes an adaptive scheme that can be used to derive OCV of the power battery. The scheme only uses the measurable input (terminal current and the measurable output (terminal voltage signals of the battery system and is simple enough to enable online implement. Firstly an equivalent circuit model is employed to describe the polarization characteristic and the dynamic behavior of the lithium-ion battery; the state-space representation of the electrical performance for the battery is obtained based on the equivalent circuit model. Then the implementation procedure of the adaptive scheme is given; also the asymptotic convergence of the observer error and the boundedness of all the parameter estimates are proven. Finally, experiments are carried out, and the effectiveness of the adaptive estimation scheme is validated by the experimental results.

  17. Low-Voltage, Low-Power, and Wide-Tuning-Range Ring-VCO for Frequency ΔΣ Modulator

    DEFF Research Database (Denmark)

    Tuan Vu, Cao; Wisland, Dag T.; Lande, Tor Sverre

    A low-voltage, low-power, and wide-tuning-range VCO which converts an analog input voltage to phase information for a frequency ΔΣ modulator is proposed in this paper. The VCO is based on a differential ring oscillator, which is improved with modified symmetric load and a positive feedback...... in the differential delay cells, a new bias circuit and a full-swing amplifier. The proposed VCO operating with two stages at a power supply voltage of 0.6 V can achieve wide tuning-range and low power consumption of 176.892 uW. The new VCO has a good linearity reducing harmonic distortion for frequency ΔΣ modulator...

  18. A novel on-chip high to low voltage power conversion circuit

    Institute of Scientific and Technical Information of China (English)

    Wang Hui; Wang Songlin; Lai Xinquan; Ye Qiang; Mou Zaixin; Li Xianrui; Guo Baolong

    2009-01-01

    A novel power supply transform technique for high voltage IC based on the TSMC 0.6μm BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm2 area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/℃. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.

  19. Simultaneous improvement in short circuit current, open circuit voltage, and fill factor of polymer solar cells through ternary strategy.

    Science.gov (United States)

    An, Qiaoshi; Zhang, Fujun; Li, Lingliang; Wang, Jian; Sun, Qianqian; Zhang, Jian; Tang, Weihua; Deng, Zhenbo

    2015-02-18

    We present a smart strategy to simultaneously increase the short circuit current (Jsc), the open circuit voltage (Voc), and the fill factor (FF) of polymer solar cells (PSCs). A two-dimensional conjugated small molecule photovoltaic material (SMPV1), as the second electron donor, was doped into the blend system of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C71-butyric acid methyl (PC71BM) to form ternary PSCs. The ternary PSCs with 5 wt % SMPV1 doping ratio in donors achieve 4.06% champion power conversion efficiency (PCE), corresponding to about 21.2% enhancement compared with the 3.35% PCE of P3HT:PC71BM-based PSCs. The underlying mechanism on performance improvement of ternary PSCs can be summarized as (i) harvesting more photons in the longer wavelength region to increase Jsc; (ii) obtaining the lower mixed highest occupied molecular orbital (HOMO) energy level by incorporating SMPV1 to increase Voc; (iii) forming the better charge carrier transport channels through the cascade energy level structure and optimizing phase separation of donor/acceptor materials to increase Jsc and FF.

  20. High-Precision Multi-Wave Rectifier Circuit Operating in Low Voltage + 1.5 Volt Current Mode

    Directory of Open Access Journals (Sweden)

    Bancha Burapattanasiri

    2009-12-01

    Full Text Available This article is present high-precision multi-wave rectifier circuit operating in low voltage +/- 1.5 Volt current modes by CMOS technology 0.5 μm, receive input and give output in current mode, respond at high frequency period. The structure compound with high-speed current comparator circuit, current mirror circuit, and CMOS inverter circuit. PSpice program used for confirmation the performance of testing. The PSpice program shows operating of circuit is able to working at maximum input current 400 μAp-p, maximum frequency responding 200 MHz, high precision and low power losses, and non-precision zero crossing output signal.Keywords-component; rectifier circuit; high-precision; low voltage; current mode;

  1. Intensity modulated short circuit current spectroscopy for solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Kavasoglu, Nese; Sertap Kavasoglu, A.; Birgi, Ozcan; Oktik, Sener [Mugla University, Faculty of Arts and Sciences, Physics Department, TR-48000 Mugla (Turkey); Mugla University Clean Energy Research and Development Centre, TR-48000 Mugla (Turkey)

    2011-02-15

    Understanding charge separation and transport is momentously important for the rectification of solar cell performance. To probe photo-generated carrier dynamics, we implemented intensity modulated short circuit current spectroscopy (IMSCCS) on porous Si and Cu(In{sub x},Ga{sub 1-x})Se{sub 2} solar cells. In this experiment, the solar cells were lightened with sinusoidally modulated monochromatic light. The photocurrent response of the solar cell as a function of modulation frequency is measured as the optoelectronic transfer function of the system. The optoelectronic transfer function introduces the connection between the modulated light intensity and measured AC current of the solar cell. In this study, interaction of free carriers with the density of states of the porous Si and Cu(In{sub x}, Ga{sub 1-x})Se{sub 2} solar cells was studied on the basis of charge transport time by IMSCCS data. (author)

  2. Voltage-sensing phosphatase modulation by a C2 domain.

    Science.gov (United States)

    Castle, Paul M; Zolman, Kevin D; Kohout, Susy C

    2015-01-01

    The voltage-sensing phosphatase (VSP) is the first example of an enzyme controlled by changes in membrane potential. VSP has four distinct regions: the transmembrane voltage-sensing domain (VSD), the inter-domain linker, the cytosolic catalytic domain, and the C2 domain. The VSD transmits the changes in membrane potential through the inter-domain linker activating the catalytic domain which then dephosphorylates phosphatidylinositol phosphate (PIP) lipids. The role of the C2, however, has not been established. In this study, we explore two possible roles for the C2: catalysis and membrane-binding. The Ci-VSP crystal structures show that the C2 residue Y522 lines the active site suggesting a contribution to catalysis. When we mutated Y522 to phenylalanine, we found a shift in the voltage dependence of activity. This suggests hydrogen bonding as a mechanism of action. Going one step further, when we deleted the entire C2 domain, we found voltage-dependent enzyme activity was no longer detectable. This result clearly indicates the entire C2 is necessary for catalysis as well as for modulating activity. As C2s are known membrane-binding domains, we tested whether the VSP C2 interacts with the membrane. We probed a cluster of four positively charged residues lining the top of the C2 and suggested by previous studies to interact with phosphatidylinositol 4,5-bisphosphate [PI(4,5)P2] (Kalli et al., 2014). Neutralizing those positive charges significantly shifted the voltage dependence of activity to higher voltages. We tested membrane binding by depleting PI(4,5)P2 from the membrane using the 5HT2C receptor and found that the VSD motions as measured by voltage clamp fluorometry (VCF) were not changed. These results suggest that if the C2 domain interacts with the membrane to influence VSP function it may not occur exclusively through PI(4,5)P2. Together, this data advances our understanding of the VSP C2 by demonstrating a necessary and critical role for the C2 domain in

  3. Dynamic Voltage Restorer Based on Space Vector Pulse Width Modulation Technique

    Directory of Open Access Journals (Sweden)

    B.N S P Venkatesh

    2011-07-01

    Full Text Available Power Quality problems encompass a wide range of disturbances such as voltage sags, swells, flicker,harmonics distortion and interruptions. The strategic deployment of custom power devices has been proposed asone of the means to protect sensitive loads from power quality problems such as voltage sags and swells. The Dynamic Voltage Restorer (DVR is a power electronic device that is used to inject 3-phase voltage in series and in synchronism with the distribution feeder voltages in order to compensate voltage sag and similarly itreacts quickly to inject the appropriate voltage component (negative voltage magnitude in order to compensate voltage swell. The principal component of the DVR is a voltage source inverter that generates three phase voltages and provides the voltage support to a sensitive load during voltage sags and swells. Pulse Width Modulation Technique is very critical for proper control of DVR. Sinusoidal Pulse Width Modulation (SPWM and Space Vector Pulse Width Modulation (SVPWM control techniques are used for controlling the DVR. Inthis work, the operation of DVR is presented and the control technique used for voltage source inverter is Space Vector PWM technique. Space vector PWM can utilize the better dc voltage and generates the fewer harmonic in inverter output voltage than Sinusoidal PWM technique. This work describes the DVR based on Space Vector PWM which provides voltage support to sensitive loads and is simulated by using MATLAB/SIMULINK. Simulation results show that the control approach is able to compensate for any type of voltage sags and swells.

  4. Elucidating the interplay between dark current coupling and open circuit voltage in organic photovoltaics

    KAUST Repository

    Erwin, Patrick

    2011-01-01

    A short series of alkyl substituted perylenediimides (PDIs) with varying steric bulk are used to demonstrate the relationship between molecular structure, materials properties, and performance characteristics in organic photovoltaics. Devices were made with the structure indium tin oxide/copper phthalocyanine (200 Å)/PDI (200 Å)/bathocuproine (100 Å)/aluminum (1000 Å). We found that PDIs with larger substituents produced higher open circuit voltages (VOC\\'s) despite the donor acceptor interface gap (Δ EDA) remaining unchanged. Additionally, series resistance was increased simultaneously with VOC the effect of reducing short circuit current, making the addition of steric bulk a tradeoff that needs to be balanced to optimize power conversion efficiency. © 2011 American Institute of Physics.

  5. Ultra-Low-Voltage Self-Body Biasing Scheme and Its Application to Basic Arithmetic Circuits

    Directory of Open Access Journals (Sweden)

    Ramiro Taco

    2015-01-01

    Full Text Available The gate level body biasing (GLBB is assessed in the context of ultra-low-voltage logic designs. To this purpose, a GLBB mirror full adder is implemented by using a commercial 45 nm bulk CMOS triple-well technology and compared to equivalent conventional zero body-biased CMOS and dynamic threshold voltage MOSFET (DTMOS circuits under different running conditions. Postlayout simulations demonstrate that, at the parity of leakage power consumption, the GLBB technique exhibits a significant concurrent reduction of the energy per operation and the delay in comparison to the conventional CMOS and DTMOS approaches. The silicon area required by the GLBB full adder is halved with respect to the equivalent DTMOS implementation, but it is higher in comparison to conventional CMOS design. Performed analysis also proves that the GLBB solution exhibits a high level of robustness against temperature fluctuations and process variations.

  6. High Open-Circuit Voltage Solar Cells Based on Organic-Inorganic Lead Bromide Perovskite.

    Science.gov (United States)

    Edri, Eran; Kirmayer, Saar; Cahen, David; Hodes, Gary

    2013-03-21

    Mesoscopic solar cells, based on solution-processed organic-inorganic perovskite absorbers, are a promising avenue for converting solar to electrical energy. We used solution-processed organic-inorganic lead halide perovskite absorbers, in conjunction with organic hole conductors, to form high voltage solar cells. There is a dire need for low-cost cells of this type, to drive electrochemical reactions or as the high photon energy cell in a system with spectral splitting. These perovskite materials, although spin-coated from solution, form highly crystalline materials. Their simple synthesis, along with high chemical versatility, allows tuning their electronic and optical properties. By judicious selection of the perovskite lead halide-based absorber, matching organic hole conductor, and contacts, a cell with a ∼ 1.3 V open circuit voltage was made. While further study is needed, this achievement provides a general guideline for additional improvement of cell performance.

  7. Surge protective device response to steep front transient in low voltage circuit

    Energy Technology Data Exchange (ETDEWEB)

    Marcuz, J.; Binczak, S.; Bilbault, J.M. [Universite de Bourgogne, Dijon (France)], Emails: jerome.marcuz@ laposte.net, stbinc@u-bourgogne.fr, bilbault@u-bourgogne.fr; Girard, F. [ADEE Electronic, Pont de Pany (France)

    2007-07-01

    Surge propagation on cables of electrical or data lines leads to a major protection problem as the number of equipment based on solid-state circuits or microprocessors increases. Sub-microsecond components of real surge waveform has to be taken into account for a proper protection even in the case of surges caused by indirect lightning effects. The response of a model of transient voltage suppressor diode based surge protection device (SPD) to fast front transient is analytically studied, then compared to simulations, including the lines connected to the SPD and to the protected equipment. (author)

  8. Voltage Recovery of Grid-Connected Wind Turbines with DFIG After a Short-Circuit Fault

    DEFF Research Database (Denmark)

    Sun, Tao; Chen, Zhe; Blaabjerg, Frede

    2004-01-01

    recovery of variable speed wind turbines with doubly fed induction generators (DFIG). A simulation model of a MW-level variable speed wind turbine with a DFIG developed in PSCAD/EMTDC is presented, and the control and protection schemes are described. A new control strategy is proposed to re......-establish the wind turbine terminal voltage after the clearance of an external short-circuit fault, and the restore the normal operation of the variable speed wind turbine with DFIG, which has been demonstrated by simulation results....

  9. Optical fiber imaging for high speed plasma motion diagnostics: applied to low voltage circuit breakers.

    Science.gov (United States)

    McBride, J W; Balestrero, A; Ghezzi, L; Tribulato, G; Cross, K J

    2010-05-01

    An integrated portable measurement system is described for the study of high speed and high temperature unsteady plasma flows such as those found in the vicinity of high current switching arcs. An array of optical fibers allows the formation of low spatial resolution images, with a maximum capture rate of 1 x 10(6) images per second (1 MHz), with 8 bit intensity resolution. Novel software techniques are reported to allow imaging of the arc; and to measure arc trajectories. Results are presented on high current (2 kA) discharge events in a model test fixture and on the application to a commercial low voltage circuit breaker.

  10. Effect of recombination on the open-circuit voltage of a silicon solar cell

    Science.gov (United States)

    Von Roos, O.; Landsberg, P. T.

    1985-01-01

    A theoretical study of the influence of band-band Auger, band-trap Auger, and the ordinary Shockley-Read-Hall mechanism for carrier recombination on the open-circuit voltage VOC of a solar cell is presented. Under reasonable assumptions for the magnitude of rate constants and realistic values for trap densities, surface recombination velocities and band-gap narrowing, the maximum VOC for typical back surface field solar cells is found to lie in the range between 0.61 and 0.72 V independent of base width.

  11. Carbon nanotube-polybithiophene photovoltaic devices with high open-circuit voltage

    Energy Technology Data Exchange (ETDEWEB)

    Patyk, Rodolfo L.; Huemmelgen, Ivo A. [Departamento de Fisica, Universidade Federal do Parana, Caixa Postal 19044, 81531-990 Curitiba PR (Brazil); Lomba, Bruno S.; Nogueira, Ana Flavia [Laboratorio de Nanotechnologia e Energia Solar, Instituto de Quimica, Unicamp, C.P. 6154, 13084-971 Campinas, Sao Paulo (Brazil); Furtado, Clascidia A.; Santos, Adelina Pinheiro [Laboratorio de Quimica de Nanoestruturas, CDTN/CNEN, Belo Horizonte, MG (Brazil); Mello, Regina M.Q.; Micaroni, Liliana [Departamento de Quimica, Universidade Federal do Parana, Caixa Postal 19081, 81531-990 Curitiba PR (Brazil)

    2007-01-15

    We report the preparation of photovoltaic devices using modified single wall carbon nanotubes, SWNTs. Devices are produced stacking on top of fluorine-doped tin-oxide, an electrochemically deposited polybithiophene layer, a layer of SWNT blended with poly(3-octylthiophene) and an evaporated top metal contact, Ca/Al or Al. Ca/Al-top-electrode devices achieve open-circuit voltages of 1.81 V and average power conversion efficiency of 1.48% at irradiance of 15.5 W m{sup -2}, spectrally distributed following AM1.5. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Numerical Electric Field Analysis of Power Status Sensor Observing Power Distribution System Taking into Account Voltage Divider Measurement Circuit

    Science.gov (United States)

    Kubo, Takuro; Furukawa, Tatsuya; Itoh, Hideaki; Fukumoto, Hisao; Wakuya, Hiroshi; Ohchi, Masashi

    We have proposed and preproducted the voltage-current waveform sensor of resin molded type for measuring the power factor and harmonics in power distribution systems. We have executed numerical electromagnetic analyses using the finite element method to estimate the characteristics and behaviours of the sensor. Although the magnetic field analyses for the current sensor have involved the measurement circuit, the electric field analyses have not included the measurement circuit for measuring voltage waveforms of power lines. In this paper, we describe the electric field analyses with the measurement circuit and prove the insulating strength of the proposed sensor permissible to the use in 22kV power distribution systems.

  13. Stability analysis and dynamic response of a DC-link module with a series voltage compensator

    DEFF Research Database (Denmark)

    Wang, Huai; Liu, Wenchao; Chung, Henry

    2013-01-01

    A DC-link module composed of a reduced value of DC-link capacitor and a series voltage compensator has been proposed. The voltage compensator processes the ripple voltage on the DC link and reactive power only, which can be implemented by low-voltage devices. The overall energy storage of the DC...

  14. Robust and Energy-Efficient Ultra-Low-Voltage Circuit Design under Timing Constraints in 65/45 nm CMOS

    Directory of Open Access Journals (Sweden)

    David Bol

    2011-01-01

    Full Text Available Ultra-low-voltage operation improves energy efficiency of logic circuits by a factor of 10×, at the expense of speed, which is acceptable for applications with low-to-medium performance requirements such as RFID, biomedical devices and wireless sensors. However, in 65/45 nm CMOS, variability and short-channel effects significantly harm robustness and timing closure of ultra-low-voltage circuits by reducing noise margins and jeopardizing gate delays. The consequent guardband on the supply voltage to meet a reasonable manufacturing yield potentially ruins energy efficiency. Moreover, high leakage currents in these technologies degrade energy efficiency in case of long stand-by periods. In this paper, we review recently published techniques to design robust and energy-efficient ultra-low-voltage circuits in 65/45 nm CMOS under relaxed yet strict timing constraints.

  15. Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Blalock, Benjamin J [ORNL; Islam, Syed K [ORNL

    2010-01-01

    Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8--m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

  16. A low-power high-speed driving circuit for spatial light modulators

    Institute of Scientific and Technical Information of China (English)

    朱明皓; 朱从义; 李文江; 张耀辉

    2012-01-01

    This paper describes the design and test of a novel custom driving circuit for multi-quantum-well (MQW) spatial light modulators (SLMs).Unlike previous solutions,we integrated all blocks in one chip to synchronize the control logic circuit and the driving circuits.Single-slope digital-to-analog converters (DACs) inside each pixel are not adopted because it is difficult to eliminate capacitor mismatch.64 column-shared 8-bit resistorstring DACs are utilized to provide programmable output voltages from 0.5 to 3.8 V.They are located on the top of 64 × 64 driving pixels tightly to match each other with several dummies.Each DAC performs its conversion in 280 ns and draws 80 μA.For a high speed data transfer rate,the system adopts a 2-stage shift register that operates at 50 MHz and the modulating rate achieves 50 K frames/s while dissipating 302 mW from a 5-V supply.The die is fabricated in a 0.35μm CMOS process and its area is 5.5 × 7 mm2.

  17. A low-power high-speed driving circuit for spatial light modulators

    Science.gov (United States)

    Minghao, Zhu; Congyi, Zhu; Wenjiang, Li; Yaohui, Zhang

    2012-02-01

    This paper describes the design and test of a novel custom driving circuit for multi-quantum-well (MQW) spatial light modulators (SLMs). Unlike previous solutions, we integrated all blocks in one chip to synchronize the control logic circuit and the driving circuits. Single-slope digital-to-analog converters (DACs) inside each pixel are not adopted because it is difficult to eliminate capacitor mismatch. 64 column-shared 8-bit resistor-string DACs are utilized to provide programmable output voltages from 0.5 to 3.8 V. They are located on the top of 64 × 64 driving pixels tightly to match each other with several dummies. Each DAC performs its conversion in 280 ns and draws 80 μA. For a high speed data transfer rate, the system adopts a 2-stage shift register that operates at 50 MHz and the modulating rate achieves 50 K frames/s while dissipating 302 mW from a 5-V supply. The die is fabricated in a 0.35 μm CMOS process and its area is 5.5 × 7 mm2.

  18. Circuit analysis method for thin-film solar cell modules

    Science.gov (United States)

    Burger, D. R.

    1985-01-01

    The design of a thin-film solar cell module is dependent on the probability of occurrence of pinhole shunt defects. Using known or assumed defect density data, dichotomous population statistics can be used to calculate the number of defects expected in a module. Probability theory is then used to assign the defective cells to individual strings in a selected series-parallel circuit design. Iterative numerical calculation is used to calcuate I-V curves using cell test values or assumed defective cell values as inputs. Good and shunted cell I-V curves are added to determine the module output power and I-V curve. Different levels of shunt resistance can be selected to model different defect levels.

  19. Controlled Conjugated Backbone Twisting for an Increased Open-Circuit Voltage while Having a High Short-Circuit Current in Poly(hexylthiophene) Derivatives

    KAUST Repository

    Ko, Sangwon

    2012-03-21

    Conjugated polymers with nearly planar backbones have been the most commonly investigated materials for organic-based electronic devices. More twisted polymer backbones have been shown to achieve larger open-circuit voltages in solar cells, though with decreased short-circuit current densities. We systematically impose twists within a family of poly(hexylthiophene)s and examine their influence on the performance of polymer:fullerene bulk heterojunction (BHJ) solar cells. A simple chemical modification concerning the number and placement of alkyl side chains along the conjugated backbone is used to control the degree of backbone twisting. Density functional theory calculations were carried out on a series of oligothiophene structures to provide insights on how the sterically induced twisting influences the geometric, electronic, and optical properties. Grazing incidence X-ray scattering measurements were performed to investigate how the thin-film packing structure was affected. The open-circuit voltage and charge-transfer state energy of the polymer:fullerene BHJ solar cells increased substantially with the degree of twist induced within the conjugated backbone-due to an increase in the polymer ionization potential-while the short-circuit current decreased as a result of a larger optical gap and lower hole mobility. A controlled, moderate degree of twist along the poly(3,4-dihexyl-2,2′:5′,2′′- terthiophene) (PDHTT) conjugated backbone led to a 19% enhancement in the open-circuit voltage (0.735 V) vs poly(3-hexylthiophene)-based devices, while similar short-circuit current densities, fill factors, and hole-carrier mobilities were maintained. These factors resulted in a power conversion efficiency of 4.2% for a PDHTT:[6,6]-phenyl-C 71-butyric acid methyl ester (PC 71BM) blend solar cell without thermal annealing. This simple approach reveals a molecular design avenue to increase open-circuit voltage while retaining the short-circuit current. © 2012 American

  20. Reduced voltage losses yield 10% efficient fullerene free organic solar cells with >1 V open circuit voltages

    KAUST Repository

    Baran, D.

    2016-11-09

    Optimization of the energy levels at the donor-acceptor interface of organic solar cells has driven their efficiencies to above 10%. However, further improvements towards efficiencies comparable with inorganic solar cells remain challenging because of high recombination losses, which empirically limit the open-circuit voltage (Voc) to typically less than 1 V. Here we show that this empirical limit can be overcome using non-fullerene acceptors blended with the low band gap polymer PffBT4T-2DT leading to efficiencies approaching 10% (9.95%). We achieve Voc up to 1.12 V, which corresponds to a loss of only Eg/q - Voc = 0.5 ± 0.01 V between the optical bandgap Eg of the polymer and Voc. This high Voc is shown to be associated with the achievement of remarkably low non-geminate and non-radiative recombination losses in these devices. Suppression of non-radiative recombination implies high external electroluminescence quantum efficiencies which are orders of magnitude higher than those of equivalent devices employing fullerene acceptors. Using the balance between reduced recombination losses and good photocurrent generation efficiencies achieved experimentally as a baseline for simulations of the efficiency potential of organic solar cells, we estimate that efficiencies of up to 20% are achievable if band gaps and fill factors are further optimized. © The Royal Society of Chemistry 2016.

  1. Reduced voltage losses yield 10% efficient fullerene free organic solar cells with >1 V open circuit voltages.

    Science.gov (United States)

    Baran, D; Kirchartz, T; Wheeler, S; Dimitrov, S; Abdelsamie, M; Gorman, J; Ashraf, R S; Holliday, S; Wadsworth, A; Gasparini, N; Kaienburg, P; Yan, H; Amassian, A; Brabec, C J; Durrant, J R; McCulloch, I

    2016-12-01

    Optimization of the energy levels at the donor-acceptor interface of organic solar cells has driven their efficiencies to above 10%. However, further improvements towards efficiencies comparable with inorganic solar cells remain challenging because of high recombination losses, which empirically limit the open-circuit voltage (Voc) to typically less than 1 V. Here we show that this empirical limit can be overcome using non-fullerene acceptors blended with the low band gap polymer PffBT4T-2DT leading to efficiencies approaching 10% (9.95%). We achieve Voc up to 1.12 V, which corresponds to a loss of only Eg/q - Voc = 0.5 ± 0.01 V between the optical bandgap Eg of the polymer and Voc. This high Voc is shown to be associated with the achievement of remarkably low non-geminate and non-radiative recombination losses in these devices. Suppression of non-radiative recombination implies high external electroluminescence quantum efficiencies which are orders of magnitude higher than those of equivalent devices employing fullerene acceptors. Using the balance between reduced recombination losses and good photocurrent generation efficiencies achieved experimentally as a baseline for simulations of the efficiency potential of organic solar cells, we estimate that efficiencies of up to 20% are achievable if band gaps and fill factors are further optimized.

  2. Enhanced Open-Circuit Voltage of PbS Nanocrystal Quantum Dot Solar Cells

    Science.gov (United States)

    Yoon, Woojun; Boercker, Janice E.; Lumb, Matthew P.; Placencia, Diogenes; Foos, Edward E.; Tischler, Joseph G.

    2013-07-01

    Nanocrystal quantum dots (QD) show great promise toward improving solar cell efficiencies through the use of quantum confinement to tune absorbance across the solar spectrum and enable multi-exciton generation. Despite this remarkable potential for high photocurrent generation, the achievable open-circuit voltage (Voc) is fundamentally limited due to non-radiative recombination processes in QD solar cells. Here we report the highest open-circuit voltages to date for colloidal QD based solar cells under one sun illumination. This Voc of 692 +/- 7 mV for 1.4 eV PbS QDs is a result of improved passivation of the defective QD surface, demonstrating as a function of the QD bandgap (Eg). Comparing experimental Voc variation with the theoretical upper-limit obtained from one diode modeling of the cells with different Eg, these results clearly demonstrate that there is a tremendous opportunity for improvement of Voc to values greater than 1 V by using smaller QDs in QD solar cells.

  3. Low voltage integrated optics electro-optical modulator applied to optical voltage transformer based on WLI technique

    Science.gov (United States)

    Santos, J. C.; Rubini, J.; Silva, L. P. C.; Caetano, R. E.

    2015-09-01

    The use of two electro-optical modulators linked in series, one for sensing and one for recovering signals, was formerly presented by some of the authors as a solution for interrogation of optical fiber sensor systems based on WLI method. A key feature required from such systems is that half-wave voltage (Vπ) of recovering modulator must be as small as possible. Aiming at meeting this requirement, in this paper it is presented the use of an unbalanced Michelson Interferometer implemented using an integrated optics component as recover interferometer in an optical voltage transformer intended for high voltage measurements.

  4. Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications

    Science.gov (United States)

    Zhuge, Jing; Verhulst, Anne S.; Vandenberghe, William G.; Dehaene, Wim; Huang, Ru; Wang, Yangyuan; Groeseneken, Guido

    2011-08-01

    This paper investigates the potential of tunnel field-effect transistors (TFETs), with emphasis on short-gate TFETs, by simulation for low-power digital applications having a supply voltage lower than 0.5 V. A transient study shows that the tunneling current has a negligible contribution in charging and discharging the gate capacitance of TFETs. In spite of a higher resistance region in the short-gate TFET, the gate (dis)charging speed still meets low-voltage application requirements. A circuit analysis is performed on short-gate TFETs with different materials, such as Si, Ge and heterostructures in terms of voltage overshoot, delay, static power, energy consumption and energy delay product (EDP). These results are compared to MOSFET and full-gate TFET performance. It is concluded that short-gate heterostructure TFETs (Ge-source for nTFET, In0.6Ga0.4As-source for pTFET) are promising candidates to extend the supply voltage to lower than 0.5 V because they combine the advantage of a low Miller capacitance, due to the short-gate structures, and strong drive current in TFETs, due to the narrow bandgap material in the source. At a supply voltage of 0.4 V and for an EOT and channel length of 0.6 nm and 40 nm, respectively, a three-stage inverter chain based on short-gate heterostructure TFETs saves 40% energy consumption per cycle at the same delay and shows 60%-75% improvement of EDP at the same static power, compared to its full-gate counterpart. When compared to the MOSFET, better EDP can be achieved in the heterostructure TFET especially at low static power consumption.

  5. Numerical modeling of high-voltage circuit breaker arcs and their interraction with the power system

    Science.gov (United States)

    Orama, Lionel R.

    In this work the interaction between series connected gas and vacuum circuit breaker arcs has been studied. The breakdown phenomena in vacuum interrupters during the post arc current period have been of special interest. Numerical models of gas and vacuum arcs were developed in the form of black box models. Especially, the vacuum post arc model was implemented by combining the existing transition model with an ion density function and expressions for the breakdown mechanisms. The test series studied reflect that for electric fields on the order of 10sp7V/m over the anode, the breakdown of the vacuum gap can result from a combination of both thermal and electrical stresses. For a particular vacuum device, the vacuum model helps to find the interruption limits of the electric field and power density over the anode. The series connection of gas and vacuum interrupters always performs better than the single gas device. Moreover, to take advantage of the good characteristics of both devices, the time between the current zero crossing in each interrupter can be changed. This current zero synchronization is controlled by changing the capacitance in parallel to the gas device. This gas/vacuum interrupter is suitable for interruption of very stressful short circuits in which the product of the dI/dt before current zero and the dV/dt after current zero is very high. Also, a single SF6 interrupter can be replaced by an air circuit breaker of the same voltage rating in series with a vacuum device without compromising the good performance of the SF6 device. Conceptually, a series connected vacuum device can be used for high voltage applications with equal distribution of electrical stresses between the individual interrupters. The equalization can be made by a sequential opening of the individual contact pairs, beginning with the interruptors that are closer to ground potential. This could eliminate the use of grading capacitors.

  6. Simple voltage-controlled current source for wideband electrical bioimpedance spectroscopy: circuit dependences and limitations

    Science.gov (United States)

    Seoane, F.; Macías, R.; Bragós, R.; Lindecrantz, K.

    2011-11-01

    In this work, the single Op-Amp with load-in-the-loop topology as a current source is revisited. This circuit topology was already used as a voltage-controlled current source (VCCS) in the 1960s but was left unused when the requirements for higher frequency arose among the applications of electrical bioimpedance (EBI). The aim of the authors is not only limited to show that with the currently available electronic devices it is perfectly viable to use this simple VCCS topology as a working current source for wideband spectroscopy applications of EBI, but also to identify the limitations and the role of each of the circuit components in the most important parameter of a current for wideband applications: the output impedance. The study includes the eventual presence of a stray capacitance and also an original enhancement, driving with current the VCCS. Based on the theoretical analysis and experimental measurements, an accurate model of the output impedance is provided, explaining the role of the main constitutive elements of the circuit in the source's output impedance. Using the topologies presented in this work and the proposed model, any electronic designer can easily implement a simple and efficient current source for wideband EBI spectroscopy applications, e.g. in this study, values above 150 kΩ at 1 MHz have been obtained, which to the knowledge of the authors are the largest values experimentally measured and reported for a current source in EBI at this frequency.

  7. Modeling and Simulation of Flexible Transmission Mechanism with Multiclearance Joints for Ultrahigh Voltage Circuit Breakers

    Directory of Open Access Journals (Sweden)

    Fangang Meng

    2015-01-01

    Full Text Available The transmission mechanism, of which the dynamic characteristics determine the reliability of the circuit breaker, is the principal component of the ultrahigh voltage (UHV circuit breaker. The characteristics of transmission mechanism are quick motion, high sensibility, and high reliability. The transmission mechanism with multiclearance joints present strong no-linear vibration feature which strongly affects the reliability of the UHV circuit breaker. In this investigation, a planar rigid-flexible coupling model of the transmission mechanism considering the clearance joints and the flexibility of components is established by using ADAMS software. The dynamic contact model in clearance joints is performed, based on clearance vector model of clearance joint. Then, the reliability of the model is proved by means of comparing the results of experiments. The simulation results show that the dynamic response of the mechanism is greatly influenced by the clearance and the flexibility of components has a role of suspension for the mechanism. Moreover, the influence of the clearance size, input speed, and number of clearance joints on the dynamic characteristics of the mechanism are also investigated.

  8. Factors limiting the open-circuit voltage in microcrystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    Chatterjee P.

    2011-11-01

    Full Text Available In studying photovoltaic devices made with silicon thin films and considering them according to their grain size, it is curious that as the crystalline fraction increases, the open-circuit voltage (Voc – rather than approaching that of the single-crystal case – shows a decline. To gain an insight into this behavior, observed in hydrogenated microcrystalline silicon (μc-Si:H solar cells prepared under a variety of deposition conditions, we have used a detailed electrical-optical computer modeling program, ASDMP. Two typical μc-Si:H cells with low (~79% and higher (~93% crystalline volume fractions (Fc, deposited in our laboratory and showing this general trend, were modeled. From the parameters extracted by simulation of their experimental current density – voltage and quantum efficiency characteristics, it was inferred that the higher Fc cell has both a higher band gap defect density as well as a lower band gap energy. Our calculations reveal that the proximity of the quasi-Fermi levels to the energy bands in cells based on highly crystallized μc-Si:H (assumed to have a lower band gap, results in both higher free and trapped carrier densities. The trapped hole population, that is particularly high near the P/I interface, results in a strong interface field, a collapse of the field in the volume, and hence a lower open-circuit voltage. Interestingly enough, we were able to fabricate fluorinated μc-Si:H:F cells having 100% crystalline fraction as well as very large grains, that violate the general trend and show a higher Voc. Modeling indicates that this is possible for the latter case, as also for a crystalline silicon PN cell, in spite of a sharply reduced band gap, because the lower effective density of states at the band edges and a sharply reduced gap defect density overcome the effect of the lower band gap.

  9. Development of High-Voltage Vacuum Circuit Breaker%高电压真空断路器的发展

    Institute of Scientific and Technical Information of China (English)

    吴红亚; 李建基

    2011-01-01

    六氟化硫断路器在高压断路器中居主导地位,而真空断路器在中压领域占绝对优势,并在高电压领域崭露头角。阐述了开发高电压真空断路器的必要性,介绍了现有产品的结构与特点,并提出了研发高电压真空断路器需解决的技术问题及相关的应对措施。%Sulfur hexafluoride circuit breakers take a leading position in high-voltage circuit breakers and vacuum circuit breakers hold all the trumps in medium voltage field,making a figure in high-voltage field.Description was made to the necessity of development of high-voltage vacuum circuit breakers.Introduction was made to structure and features of the existing products.This paper raised technical issues to be solved in RD of high-voltage vacuum circuit breakers and their related countermeasures.

  10. Real-Time Nanoscale Open-Circuit Voltage Dynamics of Perovskite Solar Cells.

    Science.gov (United States)

    Garrett, Joseph L; Tennyson, Elizabeth M; Hu, Miao; Huang, Jinsong; Munday, Jeremy N; Leite, Marina S

    2017-04-12

    Hybrid organic-inorganic perovskites based on methylammonium lead (MAPbI3) are an emerging material with great potential for high-performance and low-cost photovoltaics. However, for perovskites to become a competitive and reliable solar cell technology their instability and spatial variation must be understood and controlled. While the macroscopic characterization of the devices as a function of time is very informative, a nanoscale identification of their real-time local optoelectronic response is still missing. Here, we implement a four-dimensional imaging method through illuminated heterodyne Kelvin probe force microscopy to spatially (perovskite solar cells in a low relative humidity environment. Local open-circuit voltage (Voc) images show nanoscale sites with voltage variation >300 mV under 1-sun illumination. Surprisingly, regions of voltage that relax in seconds and after several minutes consistently coexist. Time-dependent changes of the local Voc are likely due to intragrain ion migration and are reversible at low injection level. These results show for the first time the real-time transient behavior of the Voc in perovskite solar cells at the nanoscale. Understanding and controlling the light-induced electrical changes that affect device performance are critical to the further development of stable perovskite-based solar technologies.

  11. Preparation of Power Distribution System for High Penetration of Renewable Energy Part I. Dynamic Voltage Restorer for Voltage Regulation Pat II. Distribution Circuit Modeling and Validation

    Science.gov (United States)

    Khoshkbar Sadigh, Arash

    Part I: Dynamic Voltage Restorer In the present power grids, voltage sags are recognized as a serious threat and a frequently occurring power-quality problem and have costly consequence such as sensitive loads tripping and production loss. Consequently, the demand for high power quality and voltage stability becomes a pressing issue. Dynamic voltage restorer (DVR), as a custom power device, is more effective and direct solutions for "restoring" the quality of voltage at its load-side terminals when the quality of voltage at its source-side terminals is disturbed. In the first part of this thesis, a DVR configuration with no need of bulky dc link capacitor or energy storage is proposed. This fact causes to reduce the size of the DVR and increase the reliability of the circuit. In addition, the proposed DVR topology is based on high-frequency isolation transformer resulting in the size reduction of transformer. The proposed DVR circuit, which is suitable for both low- and medium-voltage applications, is based on dc-ac converters connected in series to split the main dc link between the inputs of dc-ac converters. This feature makes it possible to use modular dc-ac converters and utilize low-voltage components in these converters whenever it is required to use DVR in medium-voltage application. The proposed configuration is tested under different conditions of load power factor and grid voltage harmonic. It has been shown that proposed DVR can compensate the voltage sag effectively and protect the sensitive loads. Following the proposition of the DVR topology, a fundamental voltage amplitude detection method which is applicable in both single/three-phase systems for DVR applications is proposed. The advantages of proposed method include application in distorted power grid with no need of any low-pass filter, precise and reliable detection, simple computation and implementation without using a phased locked loop and lookup table. The proposed method has been verified

  12. An Internal ALD-Based High Voltage Divider and Signal Circuit for MCP-based Photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Adams, Bernhard W.; Elagin, Andrey; Elam, Jeffrey W.; Frisch, Henry J.; Genat, Jean-Francois; Gregar, Joseph S.; Mane, Anil U.; Minot, Michael J.; Northrup, Richard; Obaid, Razib; Oberla, Eric; Alexander, Vostrikov; Wetstein, Matthew

    2015-04-21

    We describe a pin-less design for the high voltage (HV) resistive divider of the all-glass LAPPD (TM) 8 in,square thin photodetector module. The divider, which distributes high voltage applied to the photocathode to the two micro-channel plates (MCPs) that constitute the amplification stage, is comprised of the two MCPs and three glass mechanical spacers, each of which is coated with a resistive layer using atomic layer deposition (ALD). The three glass grid spacers and the two MCPs form a continuous resistive path between cathode and anode, with the voltages across the MCPs and the spacers determined by the resistance of each. High voltage is applied on an external tab on the top glass window that connects to the photocathode through the metal seal. The DC ground is supplied by microstrips on the bottom glass plate that form the high-bandwidth anode. The microstrips exit the package through the glass-frit seal of the anode base-plate and the package sidewall. The divider is thus completely internal, with no HV pins penetrating the low-profile flat glass package. Measurements of the performance of the divider are presented for the 8 in.-square MCP and spacer package in a custom test fixture and for an assembled externally pumped LAPPD (TM) prototype with an aluminum photocathode. (C) 2015 Elsevier B.V. All rights reserved.

  13. Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

    Institute of Scientific and Technical Information of China (English)

    Ni Jian; Zhang Jian-Jun; Cao Yu; Wang Xian-Bao; Li Chao; Chen Xin-Liang; Geng Xin-Hua; Zhao Ying

    2011-01-01

    This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125 ℃.We find that poor quality p-a-SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely.A significant improvement in open circuit voltage has been obtained by using high quality p-a-SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions.

  14. Surface-charge accumulation effects on open-circuit voltage in organic solar cells based on photoinduced impedance analysis.

    Science.gov (United States)

    Zang, Huidong; Hsiao, Yu-Che; Hu, Bin

    2014-03-14

    The accumulation of dissociated charge carriers plays an important role in reducing the loss occurring in organic solar cells. We find from light-assisted capacitance measurements that the charge accumulation inevitably occurred at the electrode and photovoltaic layer interface for bulk-heterojunction ITO/PEDOT:PSS/P3HT:PCBM/Ca/Al solar cells. Our results indicate, for the first time through impedance measurements, that the charge accumulation exists at the anode side of the device, and more importantly, we successfully identify the type of charge accumulated. Further study shows that the charge accumulation can significantly affect open circuit voltage and short circuit current. As a result, our experimental results from light assisted capacitance measurements provide a new understanding of the loss in open-circuit voltage and short-circuit photocurrent based on charge accumulation. Clearly, controlling charge accumulation presents a new mechanism to improve the photovoltaic performance of organic solar cells.

  15. Discussion on Selectivity of Low Voltage Circuit Breakers%低压断路器的选择性探讨

    Institute of Scientific and Technical Information of China (English)

    何国标

    2014-01-01

    This paper introduces the principle of selectivity for low voltage circuit breakers in distribution line. Focus on the coordinate of several circuit breakers and selectivity of overload and short circuit. This paper describes the latest selectivity technology of low voltage circuit breakers at home and abroad.%本文介绍了在配电线路中对不同低压断路器进行选择的原则。着重阐述了几种断路器之间的配合,过载情况、短路情况下的选择性。并阐述了国内外现阶段最新的低压断路器的选择性技术。

  16. Sub-module Short Circuit Fault Diagnosis in Modular Multilevel Converter Based on Wavelet Transform and Adaptive Neuro Fuzzy Inference System

    DEFF Research Database (Denmark)

    Liu, Hui; Loh, Poh Chiang; Blaabjerg, Frede

    2015-01-01

    for continuous operation and post-fault maintenance. In this article, a fault diagnosis technique is proposed for the short circuit fault in a modular multi-level converter sub-module using the wavelet transform and adaptive neuro fuzzy inference system. The fault features are extracted from output phase voltage...

  17. The correlation of open-circuit voltage with bandgap in amorphous silicon-based pin solar cells

    Science.gov (United States)

    Crandall, R. S.; Schiff, E. A.

    1996-01-01

    We briefly review the correlation of open-circuit voltages VOC with the bandgap of the intrinsic layer in amorphous silicon based pin solar cells. We discuss two mechanisms which limit VOC: intrinsic layer recombination, and the built-in potential VBI. In particular we discuss Li's proposal that the open-circuit voltages in higher bandgap cells (EG>1.9 eV) are VBI-limited. Based on computer simulations of pin solar cells we propose that VBI limitation occurs when the recombination limit to VOC exceeds the cell's field-reversal voltage VR. For a-Si:H based cells this field-reversal voltage occurs at about VBI-0.3 V. This proposal would account for the observation that VBI limitation occurs for VOC significantly smaller than VBI.

  18. Voltage sags due to the short-circuits on transmission lines; Afundamentos de tensao provocados por curto-circuitos em linhas de transmissao

    Energy Technology Data Exchange (ETDEWEB)

    Klock Junior, Odemar Solano [Companhia Paranaense de Energia (COPEL), Curitiba, PR (Brazil)

    2001-07-01

    This paper analyses the voltage sags influence on the buses, including the ones where consumers of the COPEL transmission electric system, determining the sags number and the approximate values for short-circuits on transmission lines. The voltage values, during the the short-circuit regime are obtained from the data for the short-circuit program. The short-circuits are simulated by the assembly of the electric system impedance matrix, from where the voltage values for short-circuits on any point of the electric system can be determined using simply calculations.

  19. Correlation between the Open-Circuit Voltage and Charge Transfer State Energy in Organic Photovoltaic Cells.

    Science.gov (United States)

    Zou, Yunlong; Holmes, Russell J

    2015-08-26

    In order to further improve the performance of organic photovoltaic cells (OPVs), it is essential to better understand the factors that limit the open-circuit voltage (VOC). Previous work has sought to correlate the value of VOC in donor-acceptor (D-A) OPVs to the interface energy level offset (EDA). In this work, measurements of electroluminescence are used to extract the charge transfer (CT) state energy for multiple small molecule D-A pairings. The CT state as measured from electroluminescence is found to show better correlation to the maximum VOC than EDA. The difference between EDA and the CT state energy is attributed to the Coulombic binding energy of the CT state. This correlation is demonstrated explicitly by inserting an insulating spacer layer between the donor and acceptor materials, reducing the binding energy of the CT state and increasing the measured VOC. These results demonstrate a direct correlation between maximum VOC and CT state energy.

  20. CMOS circuits for electromagnetic vibration transducers interfaces for ultra-low voltage energy harvesting

    CERN Document Server

    Maurath, Dominic

    2015-01-01

    Chip-integrated power management solutions are a must for ultra-low power systems. This enables not only the optimization of innovative sensor applications. It is also essential for integration and miniaturization of energy harvesting supply strategies of portable and autonomous monitoring systems. The book particularly addresses interfaces for energy harvesting, which are the key element to connect micro transducers to energy storage elements. Main features of the book are: - A comprehensive technology and application review, basics on transducer mechanics, fundamental circuit and control design, prototyping and testing, up to sensor system supply and applications. - Novel interfacing concepts - including active rectifiers, MPPT methods for efficient tracking of DC as well as AC sources, and a fully-integrated charge pump for efficient maximum AC power tracking at sub-100µW ultra-low power levels. The chips achieve one of widest presented operational voltage range in standard CMOS technology: 0.44V to over...

  1. The use of radial integrated circuits for the design of voltage-controlled oscillators

    Science.gov (United States)

    de Jaeger, M.

    A theoretical model for the behavior of voltage-controlled oscillators (VCO) used in millimeter-wave applications is presented, with attention concentrated on multi-diode structures. A radial structure is considered, featuring the VCOs operating in the Q band with ICs. The model developed examines the electromagnetic behavior of the circuit, taking into account multimodal functioning. Experimental results are presented for the frequency evolution with impedance. The design of a VCO, through integration of a Gunn diode and a varactor into a radial system, is described, including an analysis of the series resistance of the varactor. Optimum operational conditions are defined, as are device dimensions. Finally, the technique is extended to the design of power combiners.

  2. Origin of Open-Circuit Voltage Loss in Polymer Solar Cells and Perovskite Solar Cells.

    Science.gov (United States)

    Kim, Hyung Do; Yanagawa, Nayu; Shimazaki, Ai; Endo, Masaru; Wakamiya, Atsushi; Ohkita, Hideo; Benten, Hiroaki; Ito, Shinzaburo

    2017-06-14

    Herein, the open-circuit voltage (VOC) loss in both polymer solar cells and perovskite solar cells is quantitatively analyzed by measuring the temperature dependence of VOC to discuss the difference in the primary loss mechanism of VOC between them. As a result, the photon energy loss for polymer solar cells is in the range of about 0.7-1.4 eV, which is ascribed to temperature-independent and -dependent loss mechanisms, while that for perovskite solar cells is as small as about 0.5 eV, which is ascribed to a temperature-dependent loss mechanism. This difference is attributed to the different charge generation and recombination mechanisms between the two devices. The potential strategies for the improvement of VOC in both solar cells are further discussed on the basis of the experimental data.

  3. The Cu2ZnSnS4 solar cell with high open circuit voltage

    Science.gov (United States)

    Yang, Min; Ma, Xun; Jiang, Zhi; Li, Zhishan; Liu, Sijia; Lu, Yilei; Wang, Shurong

    2017-03-01

    In this paper, the effects of two different sulfurization processes on the CZTS films were investigated, and the results indicated that a rapid high-temperature crystallization process after sulfurization was beneficial for CZTS thin films to obtain a compact and flat surface with large grains. However, a common sulfurization without rapid high-temperature crystallization process would easily lead to undesirable properties of films, such as rough surface with pin holes, which degenerate the performance of devices. Cu2ZnSnS4 (CZTS) solar cell based on a rapid high-temperature process after sulfurization achieved a high open circuit voltage of 722 mV and the best efficiency 3.32% was obtained.

  4. A Survey of Non-conventional Techniques for Low-voltage Low-power Analog Circuit Design

    Directory of Open Access Journals (Sweden)

    F. Khateb

    2013-06-01

    Full Text Available Designing integrated circuits able to work under low-voltage (LV low-power (LP condition is currently undergoing a very considerable boom. Reducing voltage supply and power consumption of integrated circuits is crucial factor since in general it ensures the device reliability, prevents overheating of the circuits and in particular prolongs the operation period for battery powered devices. Recently, non-conventional techniques i.e. bulk-driven (BD, floating-gate (FG and quasi-floating-gate (QFG techniques have been proposed as powerful ways to reduce the design complexity and push the voltage supply towards threshold voltage of the MOS transistors (MOST. Therefore, this paper presents the operation principle, the advantages and disadvantages of each of these techniques, enabling circuit designers to choose the proper design technique based on application requirements. As an example of application three operational transconductance amplifiers (OTA base on these non-conventional techniques are presented, the voltage supply is only ±0.4 V and the power consumption is 23.5 µW. PSpice simulation results using the 0.18 µm CMOS technology from TSMC are included to verify the design functionality and correspondence with theory.

  5. Study on Factors for Accurate Open Circuit Voltage Characterizations in Mn-Type Li-Ion Batteries

    OpenAIRE

    Natthawuth Somakettarin; Tsuyoshi Funaki

    2017-01-01

    Open circuit voltage (OCV) of lithium batteries has been of interest since the battery management system (BMS) requires an accurate knowledge of the voltage characteristics of any Li-ion batteries. This article presents an OCV characteristic for lithium manganese oxide (LMO) batteries under several experimental operating conditions, and discusses factors for accurate OCV determination. A test system is developed for OCV characterization based on the OCV pulse test method. Various factors for ...

  6. Study on the Mathematical Model of Dielectric Recovery Characteristics in High Voltage SF6 Circuit Breaker

    Science.gov (United States)

    Lin, Xin; Wang, Feiming; Xu, Jianyuan; Xia, Yalong; Liu, Weidong

    2016-03-01

    According to the stream theory, this paper proposes a mathematical model of the dielectric recovery characteristic based on the two-temperature ionization equilibrium equation. Taking the dynamic variation of charged particle's ionization and attachment into account, this model can be used in collaboration with the Coulomb collision model, which gives the relationship of the heavy particle temperature and electron temperature to calculate the electron density and temperature under different pressure and electric field conditions, so as to deliver the breakdown electric field strength under different pressure conditions. Meanwhile an experiment loop of the circuit breaker has been built to measure the breakdown voltage. It is shown that calculated results are in conformity with experiment results on the whole while results based on the stream criterion are larger than experiment results. This indicates that the mathematical model proposed here is more accurate for calculating the dielectric recovery characteristic, it is derived from the stream model with some improvement and refinement and has great significance for increasing the simulation accuracy of circuit breaker's interruption characteristic. supported by Science and Technology Project of State Grid Corporation of China (No. GY17201200063), National Natural Science Foundation of China (No. 51277123), Basic Research Project of Liaoning Key Laboratory of Education Department (LZ2015055)

  7. Fuzzy diagnostic system for oleo-pneumatic drive mechanism of high-voltage circuit breakers.

    Science.gov (United States)

    Nicolau, Viorel

    2013-01-01

    Many oil-based high-voltage circuit breakers are still in use in national power networks of developing countries, like those in Eastern Europe. Changing these breakers with new more reliable ones is not an easy task, due to their implementing costs. The acting device, called oleo-pneumatic mechanism (MOP), presents the highest fault rate from all components of circuit breaker. Therefore, online predictive diagnosis and early detection of the MOP fault tendencies are very important for their good functioning state. In this paper, fuzzy logic approach is used for the diagnosis of MOP-type drive mechanisms. Expert rules are generated to estimate the MOP functioning state, and a fuzzy system is proposed for predictive diagnosis. The fuzzy inputs give information about the number of starts and time of functioning per hour, in terms of short-term components, and their mean values. Several fuzzy systems were generated, using different sets of membership functions and rule bases, and their output performances are studied. Simulation results are presented based on an input data set, which contains hourly records of operating points for a time horizon of five years. The fuzzy systems work well, making an early detection of the MOP fault tendencies.

  8. Fuzzy Diagnostic System for Oleo-Pneumatic Drive Mechanism of High-Voltage Circuit Breakers

    Directory of Open Access Journals (Sweden)

    Viorel Nicolau

    2013-01-01

    Full Text Available Many oil-based high-voltage circuit breakers are still in use in national power networks of developing countries, like those in Eastern Europe. Changing these breakers with new more reliable ones is not an easy task, due to their implementing costs. The acting device, called oleo-pneumatic mechanism (MOP, presents the highest fault rate from all components of circuit breaker. Therefore, online predictive diagnosis and early detection of the MOP fault tendencies are very important for their good functioning state. In this paper, fuzzy logic approach is used for the diagnosis of MOP-type drive mechanisms. Expert rules are generated to estimate the MOP functioning state, and a fuzzy system is proposed for predictive diagnosis. The fuzzy inputs give information about the number of starts and time of functioning per hour, in terms of short-term components, and their mean values. Several fuzzy systems were generated, using different sets of membership functions and rule bases, and their output performances are studied. Simulation results are presented based on an input data set, which contains hourly records of operating points for a time horizon of five years. The fuzzy systems work well, making an early detection of the MOP fault tendencies.

  9. Analysis and Improvement of Reflection-type Transverse Modulation Optical Voltage Sensors

    Institute of Scientific and Technical Information of China (English)

    LUO Sunan; YE Miaoyuan; XU Yan; CUI Ying

    2001-01-01

    Reflection-type transverse modulation optical voltage sensors, which employ reflection retarders to replace quarter-wave plates, are convenient for practical use. In previous literatures, the measured voltage was all applied to Bi4Ge3O12 crystal along the (110) direction for transverse modulation optical voltage sensor, and crystals are used as sensing materials. In this paper, reflection-type transverse modulation optical voltage sensor has been analyzed theoretically and a novel configuration in which the measured voltage is applied to a Bi4C-e3O12 crystal along the (001) direction with light wave passing through the crystal in the (110) direction has been proposed. According to this theoretical analysis, a novel optical voltage sensor, which can be used in a 220 kV optical fiber voltage transformer, has been designed and assembled. Experimental results showed that the linearity and the stability of the sensor during 24 hours can reach 0.3%.

  10. Influence of Copper Vapor on Low-Voltage Circuit Breaker Arcs During Stationary and Moving States

    Institute of Scientific and Technical Information of China (English)

    MA Qiang; RONG Mingzhe; WU Yi; XU Tiejun; SUN Zhiqiang

    2008-01-01

    The influence of copper vapor on the low-voltage circuit breaker arcs is studied. A three-dimensional (3-D) magnetohydrodynamics(MHD) model of arc motion under the effect of external magnetic field is built up. By adopting the commercial computational fluid dynamics (CFD) package FLUENT based on control-volume method, the above MHD model is solved. For the mediums of air-1% Cu and air-10% Cu, the distributions of stationary temperature, pressure, electrical potential and the arc motion processes are compared with those of a pure air arc. The copper vapor diffusion process in the arc chamber and the distribution of copper vapor mass concentration are also simulated. The results shows that the copper vapor has a cooling effect on the arc plasma and can decrease the stationary voltage as well. Moreover, the presence of copper vapor can decelerate the arc motion in the quenching chambers. The maximal copper vapor concentration locates behind the arc root because of the existence of a "double vortex" near the electrodes.

  11. Determining interface properties limiting open-circuit voltage in heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Brandt, Riley E. [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA; Mangan, Niall M. [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA; Li, Jian V. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Lee, Yun Seog [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA; Buonassisi, Tonio [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

    2017-05-09

    The development of new thin-film photovoltaic (PV) absorbers is often hindered by the search for an optimal heterojunction contact; an unoptimized contact may be mistaken for poor quality of the underlying absorber, making it difficult to assess the reasons for poor performance. Therefore, quantifying the loss in device efficiency and open-circuit voltage (VOC) as a result of the interface is a critical step in evaluating a new material. In the present work, we fabricate thin-film PV devices using cuprous oxide (Cu2O), with several different n-type heterojunction contacts. Their current-voltage characteristics are measured over a range of temperatures and illumination intensities (JVTi). We quantify the loss in VOC due to the interface and determine the effective energy gap at the interface. The effective interface gap measured by JVTi matches the gap measured by X-ray photoelectron spectroscopy, albeit with higher energy resolution and an order of magnitude faster. We discuss potential artifacts in JVTi measurements and areas where analytical models are insufficient. Applying JVTi to complete devices, rather than incomplete material stacks, suggests that it can be a quick, accurate method to assess the loss due to unoptimized interface band offsets in thin-film PV devices.

  12. Ultra high open circuit voltage (>1 V) of poly-3-hexylthiophene based organic solar cells with concentrated light

    DEFF Research Database (Denmark)

    Tromholt, Thomas; Madsen, Morten Vesterager; Krebs, Frederik C

    2013-01-01

    One approach to increasing polymer solar cell efficiency is to blend poly-(3-hexyl-thiophene) with poorly electron accepting fullerene derivatives to obtain higher open circuit voltage (Voc). In this letter concentrated light is used to study the electrical properties of cell operation at up...... to 2000 solar intensities of these photoactive blends. Comparison of solar cells based on five different fullerene derivatives shows that at both short circuit and open circuit conditions, recombination remains unchanged up to 50 suns. Determination of Voc at 2000 suns demonstrated that the same...

  13. Development of modulation strategies for NPC converter addressing DC link voltage balancing and CMV reduction

    DEFF Research Database (Denmark)

    Boian, D.; Biris, C.; Teodorescu, Remus

    2012-01-01

    in insulation breakdown and bearing failures. By the use of this type of converters, both Electromagnetic Interference (EMI) and harmonic distortions are improved. This paper proposes two modulation strategies for Three Level Neutral Point Clamped Converter (3L-NPC). The main focus of these modulation...... strategies is to reduce the Common Mode Voltage (CMV) and balance the DC Link Voltage....

  14. On-Chip Built-in Jitter Measurement Circuit for PLL Based on Duty-Cycle Modulation Vernier Delay Line

    Institute of Scientific and Technical Information of China (English)

    YU Fei; Chung Len Lee; ZHANG Jingkai

    2007-01-01

    Phase-locked loops (PLLs) are essential wherever a local event is synchronized with a periodic external event. They are utilized as on-chip clock frequency generators to synthesize a low skew and higher internal frequency clock from an external lower frequency signal and its characterization and measurement have recently been calling for more and more attention. In this paper, a built-in on-chip circuit for measuring jitter of PLL based on a duty cycle modulation vernier delay line is proposed and demonstrated. The circuit employs two delay lines to measure the timing difference and transform the difference signal into digital words. The vernier lines are composed of delay cells whose duty cycle can be adjusted by a feedback voltage. It enables the circuit to have a self calibration capability which eliminates the mismatch problem caused by the process variation.

  15. Transient Recovery Voltages at the Main 132kV Line Bay GIS Circuit Breaker in a Windfarm

    OpenAIRE

    Arana Aristi, Iván; Okholm, J.; Holbøll, Joachim

    2011-01-01

    This paper presents the results of investigations of the Transient Recovery Voltage (TRV) across the terminals of the main 132kV Line Bay GIS circuit breaker (GIS CB) for Walney 2, second phase of the Walney Offshore Wind Farm. Several simulations were performed where the influence of different parameters in the network was evaluated during a fault in the onshore substation. The rate of rise of recovery voltage (RRRV) and the maximum crest voltage (Uc) of the TRV across the GIS CB were compar...

  16. 内燃机车励磁恒压调节装置电路设计%Circuit design of excitation and constant voltage regulator for diesel locomotive

    Institute of Scientific and Technical Information of China (English)

    邵志和

    2001-01-01

    介绍内燃机车励磁恒压调节装置的功能,详细叙述了该装置的过压、欠压和过流保护电路原理,阐述了利用脉宽调制来控制输出的电压值和电流值的方法。TPZ25型恒压励磁调节装置现已运用在160km/h“曙光号”内燃动车上,在国内内燃机车供电系统属首次研制。%Functions of the excitation and constant voltage regulator fordiesel locomotive are introduced, of which the circuit principle of over-voltage, under-voltage and over-current protection is depicted. Also expounded is the voltage and current control method via pulse width modulation (PWM). Currently TPZ25 excitation and constant voltage regulator has been installed on 160 km/h “Shu Guang Hao” DMU.

  17. A semiconductor laser excitation circuit

    Energy Technology Data Exchange (ETDEWEB)

    Kaadzunari, O.; Masaty, K.

    1984-03-27

    A semiconductor laser excitation circuit is patented that is designed for operation in a pulsed mode with a high pulse repetition frequency. This circuit includes, in addition to a semiconductor laser, a high speed photodetector, a reference voltage source, a comparator, and a pulse oscillator and modulator. If the circuit is built using standard silicon integrated circuits, its speed amounts to several hundred megahertz, if it is constructed using gallium arsenide integrated circuits, its speed is several gigahertz.

  18. Realization of a high voltage generator by series connection of floating modules.

    Science.gov (United States)

    Antonini, P; Benato, A; Borsato, E; Carugno, G; Gobbo, R; Montecassiano, F; Pegoraro, M; Pesavento, G; Zago, M; Zotto, P

    2017-02-01

    A high voltage generator built by a series connection of 100 kV modules was produced. The series connection feasibility is ensured by the inherent floating character of each module which is wireless powered by high efficiency photovoltaic cells illuminated by a laser system. Each module is equipped with a control and monitoring board allowing excellent stabilization of the high voltage output. The performance of the system in terms of reliability, stability, and efficiency was evaluated. In particular using a three module setup, we achieved a maximum voltage of 234 kV with stability better than 0.1%.

  19. Interface Modification of Dye-sensitized Solar Cells with Pivalic Acid to Enhance the Open-circuit Voltage

    KAUST Repository

    Li, Xin

    2009-01-01

    Pivalic acid (PVA) was used as a new coadsorbent to dye-sensitized solar cells (DSCs) to modify the interface between the TiO2 films and electrolyte. The addition of PVA improved the light-to-electricity conversion efficiency of devices by 8% by enhancing the open-circuit voltage. Copyright © 2009 The Chemical Society of Japan.

  20. Low Voltage Power Efficient Tunable Shaper Circuit With Rail-To-Rail Output Range for the HYDE Detector at FAIR

    Science.gov (United States)

    Galán, J.; López-Ahumada, R.; Sánchez-Rodríguez, T.; Torralba, A.; Carvajal, R. G.; Martel, I.

    2014-04-01

    This paper presents a low voltage, low power readout front-end system implemented in 130 nm CMOS technology. A conventional architecture that consists of charge sensitive amplifier, pole/zero cancellation and shaper has been used. The work focuses on the design of novel circuit topologies in low voltage environment minimizing the power consumption in modern deep submicron CMOS technologies. An operational amplifier with rail-to-rail output swing that uses a gain boosting technique and class-AB output stage without extra power consumption has been used for the shaper. The circuit combines excellent performances with simplicity of design and suitability for low voltage operation. The system is intended to work with silicon detectors for nuclear physics applications and is optimized to match an input capacitance of 10 pF. The system features a peaking time of 500 ns, a power dissipation of 1.57 mW/channel and an equivalent noise charge of 201 e-.

  1. 电光调制器驱动源电路研究%Research of electro-optic modulator circuit of the driving source

    Institute of Scientific and Technical Information of China (English)

    谭丰菊; 张志伟

    2011-01-01

    High-speed optical fiber communication systems are usually driven by external modulation circuit, the external modulation drive circuit must be able to provide sufficient output drive voltage and DC bias to meet the needs of the modulator. Based on the above purpose, it researched the circuit design of the source of electro-optic modulator driver.%高速光纤通信系统中通常采用外调制驱动电路,外调制驱动电路必须能够提供足够的输出驱动电压和直流偏压以满足调制器的需要.基于上述目的,研究了电光调制器的驱动源电路设计.

  2. Symmetry-Breaking Charge Transfer in a Zinc Chlorodipyrrin Acceptor for High Open Circuit Voltage Organic Photovoltaics

    KAUST Repository

    Bartynski, Andrew N.

    2015-04-29

    © 2015 American Chemical Society. Low open-circuit voltages significantly limit the power conversion efficiency of organic photovoltaic devices. Typical strategies to enhance the open-circuit voltage involve tuning the HOMO and LUMO positions of the donor (D) and acceptor (A), respectively, to increase the interfacial energy gap or to tailor the donor or acceptor structure at the D/A interface. Here, we present an alternative approach to improve the open-circuit voltage through the use of a zinc chlorodipyrrin, ZCl [bis(dodecachloro-5-mesityldipyrrinato)zinc], as an acceptor, which undergoes symmetry-breaking charge transfer (CT) at the donor/acceptor interface. DBP/ZCl cells exhibit open-circuit voltages of 1.33 V compared to 0.88 V for analogous tetraphenyldibenzoperyflanthrene (DBP)/C60-based devices. Charge transfer state energies measured by Fourier-transform photocurrent spectroscopy and electroluminescence show that C60 forms a CT state of 1.45 ± 0.05 eV in a DBP/C60-based organic photovoltaic device, while ZCl as acceptor gives a CT state energy of 1.70 ± 0.05 eV in the corresponding device structure. In the ZCl device this results in an energetic loss between ECT and qVOC of 0.37 eV, substantially less than the 0.6 eV typically observed for organic systems and equal to the recombination losses seen in high-efficiency Si and GaAs devices. The substantial increase in open-circuit voltage and reduction in recombination losses for devices utilizing ZCl demonstrate the great promise of symmetry-breaking charge transfer in organic photovoltaic devices.

  3. Solid-state Marx based two-switch voltage modulator for the On-Line Isotope Mass Separator accelerator at the European Organization for Nuclear Research.

    Science.gov (United States)

    Redondo, L M; Silva, J Fernando; Canacsinh, H; Ferrão, N; Mendes, C; Soares, R; Schipper, J; Fowler, A

    2010-07-01

    A new circuit topology is proposed to replace the actual pulse transformer and thyratron based resonant modulator that supplies the 60 kV target potential for the ion acceleration of the On-Line Isotope Mass Separator accelerator, the stability of which is critical for the mass resolution downstream separator, at the European Organization for Nuclear Research. The improved modulator uses two solid-state switches working together, each one based on the Marx generator concept, operating as series and parallel switches, reducing the stress on the series stacked semiconductors, and also as auxiliary pulse generator in order to fulfill the target requirements. Preliminary results of a 10 kV prototype, using 1200 V insulated gate bipolar transistors and capacitors in the solid-state Marx circuits, ten stages each, with an electrical equivalent circuit of the target, are presented, demonstrating both the improved voltage stability and pulse flexibility potential wanted for this new modulator.

  4. A Comprehensive Investigation on the Short Circuit Performance of MW-level IGBT Power Modules

    DEFF Research Database (Denmark)

    Wu, Rui; Reigosa, Paula Diaz; Iannuzzo, Francesco

    2015-01-01

    This paper investigates the short circuit performance of commercial 1.7 kV / 1 kA IGBT power modules by means of a 6 kA Non-Destructive-Tester. A mismatched current distribution among the parallel chips has been observed, which can reduce the short circuit capability of the IGBT power module under...

  5. Design and test of component circuits of an integrated quantum voltage noise source for Johnson noise thermometry

    Science.gov (United States)

    Yamada, Takahiro; Maezawa, Masaaki; Urano, Chiharu

    2015-11-01

    We present design and testing of a pseudo-random number generator (PRNG) and a variable pulse number multiplier (VPNM) which are digital circuit subsystems in an integrated quantum voltage noise source for Jonson noise thermometry. Well-defined, calculable pseudo-random patterns of single flux quantum pulses are synthesized with the PRNG and multiplied digitally with the VPNM. The circuit implementation on rapid single flux quantum technology required practical circuit scales and bias currents, 279 junctions and 33 mA for the PRNG, and 1677 junctions and 218 mA for the VPNM. We confirmed the circuit operation with sufficiently wide margins, 80-120%, with respect to the designed bias currents.

  6. Low-voltage high-speed coupling modulation in silicon racetrack ring resonators.

    Science.gov (United States)

    Yang, Rui; Zhou, Linjie; Zhu, Haike; Chen, Jianping

    2015-11-02

    We demonstrate a low-voltage high-speed modulator based on a silicon racetrack resonator with a tunable Mach-Zehnder interferometer coupler. Both static measurement and dynamic modulation experiment are carried out. The 3-dB electro-optic bandwidth is measured to be >30 GHz beyond the limit by the cavity photon lifetime. A 32 Gb/s on-off keying (OOK) modulation is realized under a peak-to-peak drive voltage as low as 0.4 V, and a 28 Gb/s binary phase-shift-keying (BPSK) modulation is realized with a drive voltage of 3 V. The low drive voltages results in low energy consumptions of ~13.3 fJ/bit and ~1.2 pJ/bit for OOK and BPSK modulations, respectively.

  7. Analysis of a dc SQUID readout scheme with voltage feedback circuit and low-noise preamplifier

    Science.gov (United States)

    Zeng, Jia; Zhang, Yi; Schmelz, Matthias; Mück, Michael; Krause, Hans-Joachim; Braginski, Alex I.; Lee, Yong-Ho; Stolz, Ronny; Kong, Xiangyan; Xie, Xiaoming; Meyer, Hans-Georg; Offenhäusser, Andreas; Jiang, Mianheng

    2014-08-01

    We analyzed the dc SQUID with voltage feedback circuit (VFC) and a low-noise room-temperature preamplifier to evaluate the feasibility of a low-noise SQUID direct-coupled readout scheme (DRS), possibly eliminating the need for a two-stage scheme employing a SQUID preamplifier. The passive VFC, connected in parallel to the SQUID, consists of a resistor Rs in series with an inductor L s. This inductor is coupled to the SQUID by a mutual inductance Ms. The purpose of the VFC is to increase the SQUID’s flux-to-voltage transfer coefficient ∂V/∂Φ, thus reducing the preamplifier noise contribution δΦpreamp. However, at the same time, VFC introduces the thermal noise of Rs, δΦR, which may not be negligible. Generally, the noise of the readout scheme, δΦreadout, may thus include both δΦpreamp and δΦR, i.e., δΦreadout2 = δΦpreamp2 + δΦR2. To characterize the SQUID operation with VFC we introduced two dimensionless parameters, r = Rs/Rd and Δ = (M s/Mdyn) - (Rs/R d), where Rd and Mdyn = 1/(∂i/∂Φ) are dynamic properties of the SQUID itself. For assumed intrinsic SQUID parameters, we then numerically analyzed the dependence of δΦreadout noise components on r and Δ to determine their suitable ranges and the minimum of δΦreadout. To verify our analysis, we experimentally characterized, in liquid helium, three niobium SQUIDs with VFC, having suitably chosen r and Δ. The measured SQUID system flux noise was on the order of 1 μΦ0/√Hz, comparable to the intrinsic noise of the SQUID itself. The deduced equivalent voltage noise was comparable to that of a SQUID preamplifier in the two-stage readout. Simple single-stage ultra-low-noise SQUID DRS readout was thus demonstrated.

  8. Theoretical investigation of the open circuit voltage: P3HT/9,9'-bisfluorenylidene derivative devices.

    Science.gov (United States)

    Carlotto, Silvia

    2014-07-03

    The calculation of the power conversion efficiency (PCE) value for a bulk heterojunction (BHJ) organic solar cell is complex due to the wide number of parameters involved in the processes. This study focuses the attention on the molecular parameters involved into the open circuit voltage and the PCE definitions and in particular on the electronic coupling and on the lowest unoccupied molecular orbital (LUMO) of the acceptor. A simplified model system composed by a polymer as donor and a novel class of molecules (9,9'-bisfluorenylidene derivatives) as acceptor has been proposed as prototype to simulate the BHJ organic solar cell interface. Several substituents on different positions are tested and the chemical nature/position of substituents have a relevant influence on the electronic coupling and energy level values. Geometrical and electronic properties are obtained using density functional theory (DFT) and time-dependent (TD)-DFT calculations, respectively. A new hypothesis suggests that the minimization of the electronic coupling between the LUMO of the acceptor and the highest occupied molecular orbital (HOMO) of the donor can enhance the PCE reducing the recombination interface processes and calculations showing the possibility to minimize this parameter and fine-tune acceptor energy level through the acceptor functionalization. An accurate balance between electronic coupling and on the LUMO of the acceptor allows to propose the more performing candidate as electron acceptor in a P3HT/99'BF derivative BHJ solar cell.

  9. Simulation and Experimental Study of Arc Column Expansion After Ignition in Low-Voltage Circuit Breakers

    Institute of Scientific and Technical Information of China (English)

    MA Qiang; RONG Mingzhe; WU Yi; XU Tiejun; SUN Zhiqiang

    2008-01-01

    The dynamicprocess of arc pressure and corresponding arc column expansion, which is the main feature after arc ignition and has a significant effect on the breaking behaviour of low -voltage circuit breakers, is studied. By constructing a three dimensional mathematical model of air arc plasma and adopting the Control Volume Method, the parameters of arc plasma including temperature and pressure axe obtained. The variations of pressure field and temperature field with time are simulated. The result indicates that there are six stages for the process of arc column expansion according to the variation of pressure in arc chamber. In the first stage, the maximal pressure locates in the region close to cathode, and in the second stage the maximal pressure shifts to the region close to the anode. In the third stage, the pressure difference between the middle of arc column and the ambient gas is very large, so the arc column begins to expand apparently. In the fourth stage, the pressure wave propagates towards both ends and the maximal pressure appears at the two ends when the pressure wave reaches both sidewalls. In the fifth stage, the pressure wave is reflected and collides in the middle of the arc chamber. In the last stage, the propagation and reflection of pressure wave will repeat several times until a steady burning state is reached. In addition, the experimental results of arc column expansion, corresponding to the arc pressure variation, are presented to verify the simulation results.

  10. Low Voltage Alarm Apprenticeship. Related Training Modules. 27.1-27.4 Computer Usage.

    Science.gov (United States)

    Lane Community Coll., Eugene, OR.

    This packet of four learning modules on computer usage is one of eight such packets developed for apprenticeship training for low voltage alarm. Introductory materials are a complete listing of all available modules and a supplementary reference list. Each module contains some or all of these components: goal, performance indicators, study guide…

  11. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

    Science.gov (United States)

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-05-09

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

  12. Design and test of component circuits of an integrated quantum voltage noise source for Johnson noise thermometry

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Takahiro, E-mail: yamada-takahiro@aist.go.jp [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568 (Japan); Maezawa, Masaaki [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568 (Japan); Urano, Chiharu [National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Central 3, Umezono 1-1-1, Tsukuba, Ibaraki 305-8563 (Japan)

    2015-11-15

    Highlights: • We demonstrated RSFQ digital components of a new quantum voltage noise source. • A pseudo-random number generator and variable pulse number multiplier are designed. • Fabrication process is based on four Nb wiring layers and Nb/AlOx/Nb junctions. • The circuits successfully operated with wide dc bias current margins, 80–120%. - Abstract: We present design and testing of a pseudo-random number generator (PRNG) and a variable pulse number multiplier (VPNM) which are digital circuit subsystems in an integrated quantum voltage noise source for Jonson noise thermometry. Well-defined, calculable pseudo-random patterns of single flux quantum pulses are synthesized with the PRNG and multiplied digitally with the VPNM. The circuit implementation on rapid single flux quantum technology required practical circuit scales and bias currents, 279 junctions and 33 mA for the PRNG, and 1677 junctions and 218 mA for the VPNM. We confirmed the circuit operation with sufficiently wide margins, 80–120%, with respect to the designed bias currents.

  13. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

    Science.gov (United States)

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-05-01

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V‑1 sec‑1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

  14. Low-Driving-Voltage Optical Modulation Utilizing FWM for High-Speed Transmission Systems

    Institute of Scientific and Technical Information of China (English)

    Akihiko; Matsuura; Toshiya; Matsuda; Tomoyoshi; Kataoka

    2003-01-01

    We propose an optical transmitter with reduced modulator driving voltage. This reduction is achieved through an on-off ratio improvement technique based on FWM. We confirmed the feasibility of the method in a 43-Gbit/s experiment.

  15. Methods, systems and apparatus for adjusting modulation index to improve linearity of phase voltage commands

    Energy Technology Data Exchange (ETDEWEB)

    Gallegos-Lopez, Gabriel; Perisic, Milun; Kinoshita, Michael H.

    2017-03-14

    Embodiments of the present invention relate to methods, systems and apparatus for controlling operation of a multi-phase machine in a motor drive system. The disclosed embodiments provide a mechanism for adjusting modulation index of voltage commands to improve linearity of the voltage commands.

  16. Simulation Study on the Open-Circuit Voltage of Amorphous Silicon p-i-n Solar Cells Using AMPS-1D

    Directory of Open Access Journals (Sweden)

    B.M. Omer

    2014-04-01

    Full Text Available AMPS-1D (Analysis of Microelectronic and Photonic Structure simulation program was used to simulate Amorphous Silicon p-i-n Solar Cell. The simulated result of illuminated current density-voltage characteristics was in a good agreement with experimental values. The dependence of the open-circuit voltage on the characteristics of the a-Si:H intrinsic layer was investigated. The simulation result shows that the open-circuit voltage does not depend on the thickness of the intrinsic layer. The open-circuit voltage decreases when the front contact barrier height is small or the energy gap of the intrinsic layer is small. The open-circuit voltage increases when the distribution of the tail states is sharp or the capture cross sections of these states are small.

  17. Tesla’s high voltage and high frequency generators with oscillatory circuits

    Directory of Open Access Journals (Sweden)

    Cvetić Jovan M.

    2016-01-01

    Full Text Available The principles that represent the basics of the work of the high voltage and high frequency generator with oscillating circuits will be discussed. Until 1891, Tesla made and used mechanical generators with a large number of extruded poles for the frequencies up to about 20 kHz. The first electric generators based on a new principle of a weakly coupled oscillatory circuits he used for the wireless signal transmission, for the study of the discharges in vacuum tubes, the wireless energy transmission, for the production of the cathode rays, that is x-rays and other experiments. Aiming to transfer the signals and the energy to any point of the surface of the Earth, in the late of 19th century, he had discovered and later patented a new type of high frequency generator called a magnifying transmitter. He used it to examine the propagation of electromagnetic waves over the surface of the Earth in experiments in Colorado Springs in the period 1899-1900. Tesla observed the formation of standing electromagnetic waves on the surface of the Earth by measuring radiated electric field from distant lightning thunderstorm. He got the idea to generate the similar radiation to produce the standing waves. On the one hand, signal transmission, i.e. communication at great distances would be possible and on the other hand, with more powerful and with at least three magnifying transmitters the wireless transmission of energy without conductors at any point of the Earth surface could also be achieved. The discovery of the standing waves on the surface of the Earth and the invention of the magnifying transmitter he claimed his greatest inventions. Less than two years later, at the end of 1901, he designed and started to build a much stronger magnifying transmitter on Long Island near New York City (the Wardenclyffe tower wishing to become a world telecommunication center. During the tower construction, he elaborated the plans for an even stronger transmitter based on

  18. Study program to improve the open-circuit voltage of low resistivity single crystal silicon solar cells

    Science.gov (United States)

    Minnucci, J. A.; Matthei, K. W.

    1980-01-01

    The results of a 14 month program to improve the open circuit voltage of low resistivity silicon solar cells are described. The approach was based on ion implantation in 0.1- to 10.0-ohm-cm float-zone silicon. As a result of the contract effort, open circuit voltages as high as 645 mV (AMO 25 C) were attained by high dose phosphorus implantation followed by furnace annealing and simultaneous SiO2 growth. One key element was to investigate the effects of bandgap narrowing caused by high doping concentrations in the junction layer. Considerable effort was applied to optimization of implant parameters, selection of furnace annealing techniques, and utilization of pulsed electron beam annealing to minimize thermal process-induced defects in the completed solar cells.

  19. The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

    Science.gov (United States)

    Weizer, V. G.; Godlewski, M. P.

    1984-01-01

    It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.

  20. A new generation of medium-voltage switchboards and circuit-breakers; Eine neue Generation von Mittelspannungsschaltanlagen und -leistungsschaltern

    Energy Technology Data Exchange (ETDEWEB)

    Saemann, D.; Weichert, R.; Werner, S. [Siemens AG, Erlangen (Germany). Bereich Energieuebertragung und -verteilung

    1998-04-06

    Todays market and the trend towards globalization of business both call for new products. The authors describe the new generation of medium-voltage switchgears and circuit-breakers, along with the benefit they bring for customers. (orig./RHM) [Deutsch] Der Markt und die Globalisierung des Geschaeftes fordern neue Produkte. Die Verfasser beschreiben die neue Generation von Mittelspannungsschaltanlagen und -schaltern sowie deren Nutzen fuer die Anwender. (orig./RHM)

  1. Limitations on the open-circuit voltage imposed by P/+/ and N/+/ regions in silicon solar cells

    Science.gov (United States)

    Shibib, M. A.; Fossum, J. G.

    1981-02-01

    It is shown theoretically and experimentally that the emitter recombination current, which limits the open-circuit voltage of silicon solar cells, can be more easily suppressed in P(+)N cells than in N(+)P cells. This result is due to fundamental effects that occur in heavily doped silicon: degeneracy of the majority charge carriers, Auger recombination, and energy-band-gap narrowing. Cell designs to suppress the emitter current are discussed, and experimental data supporting our theoretical analysis are presented.

  2. Electromagnetic compatibility between secondary and high voltage circuits; Compatibilidade eletromagnetica entre circuitos secundarios e de alta tensao

    Energy Technology Data Exchange (ETDEWEB)

    Alves, Mario Fabiano [Pontificia Univ. Catolica de Minas Gerais, Belo Horizonte, MG (Brazil)

    1997-11-01

    Electromagnetic fields generated by high voltage circuits may affect the performance of sensible loads in an electric power substation. In order to reduce such interferences, and guarantee the adequate performance of the equipment, this work proposes some measures which may be applied to the project during the installation phase, such as the equalization of high frequency power, and the utilization of protective equipment as well as the integration of grounding systems 9 refs., 3 figs.

  3. Understanding device-structure-induced variations in open-circuit voltage for organic photovoltaics.

    Science.gov (United States)

    Wang, Zhiping; Uemura, Yu; Zhou, Ying; Miyadera, Tetsuhiko; Azumi, Reiko; Yoshida, Yuji; Chikamatsu, Masayuki

    2015-05-27

    We investigate the structural influences on the device performance, especially on open-circuit voltage (V(OC)) in squaraine (SQ)/fullerene (C60) bilayer cells. Simply changing the SQ thickness could lead to 40% variation in V(OC) from 0.62 to 0.86 V. The ionization potential (IP) of SQ films and recombination at the anode surface as well as donor/acceptor (D/A) interface sensitively vary with film thicknesses, which account for the shifts in V(OC). The anode recombination can be effectively suppressed by preventing direct contact between C60 and the anode with a buffer layer, delivering an elevated V(OC). Through polarized infrared-multiple-angle incidence resolution spectroscopy measurement, the molecular structure of SQ films is found to gradually evolve from lying-down on indium-tin oxide substrates with noncentrosymmetric orientation at low thicknesses to random structure at high thicknesses. The different molecular orientation may yield different strengths of electronic coupling, which affects the charge-carrier recombination and thus V(OC). Moreover, the oriented SQ films would spontaneously compose aligned dipole moments at the D/A interface because of the strong dipolar effects in SQ molecules identified by density functional theory calculations, whereas no aligned interfacial dipole moment exists in the random structure. The resulting interfacial dipole moments would form an electric field at the D/A interface, leading to variations in the IP and thus impacting V(OC). Our findings demonstrate that V(OC) in organic photovoltaic cells is critically associated with the molecular orientation that affects the charge-carrier recombination and interfacial dipole alignment, which should be seriously taken into consideration for the design of organic molecules and optimization of the cell efficiency.

  4. NBTI-Aware Transient Fault Rate Analysis Method for Logic Circuit Based on Probability Voltage Transfer Characteristics

    Directory of Open Access Journals (Sweden)

    Zhiming Yang

    2016-01-01

    Full Text Available The reliability of Very Large Scale Integration (VLSI circuits has become increasingly susceptible to transient faults induced by environmental noise with the scaling of technology. Some commonly used fault tolerance strategies require statistical methods to accurately estimate the fault rate in different parts of the logic circuit, and Monte Carlo (MC simulation is often applied to complete this task. However, the MC method suffers from impractical computation costs due to the size of the circuits. Furthermore, circuit aging effects, such as negative bias temperature instability (NBTI, will change the characteristics of the circuit during its lifetime, leading to a change in the circuit’s noise margin. This change will increase the complexity of transient fault rate estimation tasks. In this paper, an NBTI-aware statistical analysis method based on probability voltage transfer characteristics is proposed for combinational logic circuit. This method can acquire accurate fault rates using a discrete probability density function approximation process, thus resolving the computation cost problem of the MC method. The proposed method can also consider aging effects and analyze statistical changes in the fault rates. Experimental results demonstrate that, compared to the MC simulation, our method can achieve computation times that are two orders of magnitude shorter while maintaining an error rate less than 9%.

  5. Approaches to Suppressing Shaft Voltage in Brushless DC Motor Driven by PWM Inverter Based on Ungrounded Common-Mode Equivalent Circuit

    Science.gov (United States)

    Maetani, Tatsuo; Isomura, Yoshinori; Watanabe, Akihiko; Iimori, Kenichi; Morimoto, Shigeo

    This paper describes an ungrounded common-mode equivalent circuit for a motor driven by a voltage-source PWM inverter. When the capacitance of the rotor was is small, the reversal of the polarities of the common-mode voltage and shaft voltage is observed. In order to model this reversal, a bridge-type equivalent circuit is proposed. On the basis of calculations and experiment, it is found the values and polarity of the shaft voltage can be are accurately determined with the proposed equivalent circuit. Furthermore, the capacitance value of the insulated rotor required to make the shaft voltage equal to or less than the dielectric breakdown voltage of the bearing grease is obtained.

  6. Interface band gap narrowing behind open circuit voltage losses in Cu2ZnSnS4 solar cells

    DEFF Research Database (Denmark)

    Crovetto, Andrea; Palsgaard, Mattias Lau Nøhr; Gunst, Tue

    2017-01-01

    We present evidence that bandgap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu2ZnSnS4/CdS solar cells. Bandgap narrowing is caused by surface states that extend the Cu2ZnSnS4valence band into the forbidden gap. Those surface states are consi......We present evidence that bandgap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu2ZnSnS4/CdS solar cells. Bandgap narrowing is caused by surface states that extend the Cu2ZnSnS4valence band into the forbidden gap. Those surface states...... Zn to passivate those surface states. Focusing future research on Zn-based buffers is expected to significantly improve the open circuit voltage and efficiency of pure-sulfide Cu2ZnSnS4 solar cells....

  7. Ultra-high open-circuit voltage of perovskite solar cells induced by nucleation thermodynamics on rough substrates

    Science.gov (United States)

    Li, Yan; Ding, Bin; Chu, Qian-Qian; Yang, Guan-Jun; Wang, Mingkui; Li, Chang-Xin; Li, Chang-Jiu

    2017-01-01

    To obtain high performance CH3NH3PbI3 perovskite solar cells, it is highly important to realise a high open-circuit voltage. Calculation results based on a modified diode model have indicated that a low bare ratio ϕ of the perovskite film is the most important factor determining the open-circuit voltage, where ϕ is defined as the ratio of the projection of the uncovered area of the perovskite film to the apparent area of the total substrate surface. To realise a low ϕ, we investigate the nucleation behaviour of crystals on rough substrates. The analysis results predict that, when CH3NH3PbI3 is deposited on conventional transparent conductive oxide substrates such as fluorine-doped tin oxide, preferential heterogeneous nucleation will occur on the concave regions of the substrate; then, depending on the subsequent growth step, full coverage of the perovskite film at both the macroscopic and microscopic scales is realised. As a result, an ultra-high open-circuit voltage, i.e., 1.20 V, can be achieved in devices using the full coverage CH3NH3PbI3 film. The thermodynamics theory of precipitation nucleation should shed light on solution engineering of thin films. PMID:28401890

  8. Ultra-high open-circuit voltage of perovskite solar cells induced by nucleation thermodynamics on rough substrates

    Science.gov (United States)

    Li, Yan; Ding, Bin; Chu, Qian-Qian; Yang, Guan-Jun; Wang, Mingkui; Li, Chang-Xin; Li, Chang-Jiu

    2017-04-01

    To obtain high performance CH3NH3PbI3 perovskite solar cells, it is highly important to realise a high open-circuit voltage. Calculation results based on a modified diode model have indicated that a low bare ratio ϕ of the perovskite film is the most important factor determining the open-circuit voltage, where ϕ is defined as the ratio of the projection of the uncovered area of the perovskite film to the apparent area of the total substrate surface. To realise a low ϕ, we investigate the nucleation behaviour of crystals on rough substrates. The analysis results predict that, when CH3NH3PbI3 is deposited on conventional transparent conductive oxide substrates such as fluorine-doped tin oxide, preferential heterogeneous nucleation will occur on the concave regions of the substrate; then, depending on the subsequent growth step, full coverage of the perovskite film at both the macroscopic and microscopic scales is realised. As a result, an ultra-high open-circuit voltage, i.e., 1.20 V, can be achieved in devices using the full coverage CH3NH3PbI3 film. The thermodynamics theory of precipitation nucleation should shed light on solution engineering of thin films.

  9. Enhancement in open-circuit voltage of implantable CMOS-compatible glucose fuel cell by improving the anodic catalyst

    Science.gov (United States)

    Niitsu, Kiichi; Ando, Takashi; Kobayashi, Atsuki; Nakazato, Kazuo

    2017-01-01

    This paper presents an implantable CMOS-compatible glucose fuel cell that generates an open-circuit voltage (OCV) of 880 mV. The developed fuel cell is solid-catalyst-based and manufactured from biocompatible materials; thus, it can be implanted to the human body. Additionally, since the cell can be manufactured using a semiconductor (CMOS) fabrication process, it can also be manufactured together with CMOS circuits on a single silicon wafer. In the literature, an implantable CMOS-compatible glucose fuel cell has been reported. However, its OCV is 192 mV, which is insufficient for CMOS circuit operation. In this work, we have enhanced the performance of the fuel cell by improving the electrocatalytic ability of the anode. The prototype with the newly proposed Pt/carbon nanotube (CNT) anode structure successfully achieved an OCV of 880 mV, which is the highest ever reported.

  10. Modulation Voltage of High T c DC Superconducting Quantum Interference Device with Damping Resistance

    Science.gov (United States)

    Enpuku, Keiji; Doi, Hideki; Tokita, Go; Maruo, Taku

    1994-05-01

    The effect of damping resistance on the voltage versus flux (V -Φ) relation of the high T c dc superconducting quantum interference device (SQUID) is studied experimentally. Dc SQUID using YBaCuO step-edge junction and damping resistance in parallel with SQUID inductance is fabricated. Measured values of modulation voltage in the V -Φ relation are compared with those of the conventional SQUID without damping resistance. It is shown that modulation voltage is much improved by using damping resistance. The obtained experimental results agree reasonably with theoretical predictions reported previously.

  11. Synchronised Voltage Space Vector Modulation for Three-level Inverters with Common-mode Voltage Elimination

    DEFF Research Database (Denmark)

    Oleschuk, Valentin; Blaabjerg, Frede

    2002-01-01

    of the voltage waveforms during the whole control range including overmodulation. Continuous, discontinuous and "direct-direct" schemes of synchronous PWM with both algebraic and trigonometric control functions have been analysed and compared. Simulations give the behaviour of the proposed methods and show some...

  12. The correlation of open-circuit voltage with bandgap in amorphous silicon-based {ital pin} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Crandall, R.S. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Schiff, E.A. [Department of Physics, Syracuse University, Syracuse, New York 13244-1130 (United States)

    1996-01-01

    We briefly review the correlation of open-circuit voltages {ital V}{sub OC} with the bandgap of the intrinsic layer in amorphous silicon based {ital pin} solar cells. We discuss two mechanisms which limit {ital V}{sub OC}: intrinsic layer recombination, and the built-in potential {ital V}{sub BI}. In particular we discuss Li{close_quote}s proposal that the open-circuit voltages in higher bandgap cells ({ital E}{sub G}{gt}1.9 eV) are {ital V}{sub BI}-limited. Based on computer simulations of {ital pin} solar cells we propose that {ital V}{sub BI} limitation occurs when the recombination limit to {ital V}{sub OC} exceeds the cell{close_quote}s field-reversal voltage {ital V}{sub R}. For {ital a}-Si:H based cells this field-reversal voltage occurs at about {ital V}{sub BI}-0.3 V. This proposal would account for the observation that {ital V}{sub BI} limitation occurs for {ital V}{sub OC} significantly smaller than {ital V}{sub BI}. {copyright} {ital 1996 American Institute of Physics.}

  13. Polycrystalline silicon thin-film solar cells prepared by layered laser crystallization with 540 mV open circuit voltage

    Energy Technology Data Exchange (ETDEWEB)

    Plentz, Jonathan, E-mail: jonathan.plentz@ipht-jena.de [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena (Germany); Experimental Physics I, Institute of Physics, Ilmenau University of Technology, Weimarer Str. 32, 98693 Ilmenau (Germany); Andrä, Gudrun; Gawlik, Annett; Höger, Ingmar; Jia, Guobin; Falk, Fritz [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena (Germany)

    2014-07-01

    Polycrystalline silicon thin film solar cells on a glass substrate are investigated. The solar cell layer structure was generated by a two-step process in which first a 100–600 nm thin seed layer is formed by diode laser crystallization of electron beam evaporated amorphous silicon. In a second step this layer is epitaxially thickened to 2–3.5 μm by layered laser crystallization. In this process further amorphous silicon is deposited and in situ repeatedly is irradiated by excimer laser pulses. The polycrystalline layer consists of grains several hundreds of microns long and several tens of microns wide and it contains a p{sup +}–p–n{sup +} doping profile. After deposition a rapid thermal annealing and hydrogen passivation steps follow. The back and front contacts are prepared after mesa structuring. The influence of the seed layer thickness on the solar cell performance was investigated. In addition, the absorber contamination due to the background pressure during absorber deposition and its influence on the short circuit current density was investigated. The best parameters reached for various solar cells are 540 mV open circuit voltage, 20.3 mA/cm{sup 2} short circuit current density (without light trapping), 75% fill factor, and 5.2% efficiency. - Highlights: • Layered laser crystallization leads to grain sizes of 10–300 μm on glass. • Open circuit voltage of 540 mV and efficiency of 5.2% are achieved. • Short circuit current is influenced by background pressure during deposition. • Short circuit current density of 20.3 mA/cm{sup 2} is reached without light trapping. • Progress requires pressures below 10{sup −7} hPa and deposition rates over 100 nm/min.

  14. Study on Factors for Accurate Open Circuit Voltage Characterizations in Mn-Type Li-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Natthawuth Somakettarin

    2017-03-01

    Full Text Available Open circuit voltage (OCV of lithium batteries has been of interest since the battery management system (BMS requires an accurate knowledge of the voltage characteristics of any Li-ion batteries. This article presents an OCV characteristic for lithium manganese oxide (LMO batteries under several experimental operating conditions, and discusses factors for accurate OCV determination. A test system is developed for OCV characterization based on the OCV pulse test method. Various factors for the OCV behavior, such as resting period, step-size of the pulse test, testing current amplitude, hysteresis phenomena, and terminal voltage relationship, are investigated and evaluated. To this end, a general OCV model based on state of charge (SOC tracking is developed and validated with satisfactory results.

  15. A High-Voltage Integrated Circuit Engine for a Dielectrophoresis-based Programmable Micro-Fluidic Processor

    Science.gov (United States)

    Current, K. Wayne; Yuk, Kelvin; McConaghy, Charles; Gascoyne, Peter R. C.; Schwartz, Jon A.; Vykoukal, Jody V.; Andrews, Craig

    2010-01-01

    A high-voltage (HV) integrated circuit has been demonstrated to transport droplets on programmable paths across its coated surface. This chip is the engine for a dielectrophoresis (DEP)-based micro-fluidic lab-on-a-chip system. This chip creates DEP forces that move and help inject droplets. Electrode excitation voltage and frequency are variable. With the electrodes driven with a 100V peak-to-peak periodic waveform, the maximum high-voltage electrode waveform frequency is about 200Hz. Data communication rate is variable up to 250kHz. This demonstration chip has a 32×32 array of nominally 100V electrode drivers. It is fabricated in a 130V SOI CMOS fabrication technology, dissipates a maximum of 1.87W, and is about 10.4 mm × 8.2 mm. PMID:23989241

  16. Modeling of parasitic elements in high voltage multiplier modules

    NARCIS (Netherlands)

    Wang, J.

    2014-01-01

    It is an inevitable trend that the power conversion module will have higher switching frequency and smaller volume in the future. Bandgap devices, such as SiC and GaN devices, accelerate the process. With this process, the parasitic elements in the module will probably have stronger influence on cir

  17. A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Iannuzzo, Francesco; Luo, Haoze

    2017-01-01

    to the experimental results, two different failure mechanisms have been identified, both reducing the short-circuit capability of SiC power modules with respect to discrete SiC devices. Based on such failure mechanisms, two short-circuit safety criteria have been formulated: 1) the short...

  18. Use of Solid State Modules in a Control Circuit for Rough Pumping System

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    At present solid state modules are more and more substituting for some circuit units which were originally composed of separated electronic devices as they have many advantages,such as convenient fbr using,high reliability and efficiency, low power requirement and saving space.There is a control circuit in which some solid

  19. Simulation and Analysis of Dynamic Characteristics of3D Assembly Circuit Module with Finite Element Method

    Institute of Scientific and Technical Information of China (English)

    黄春跃; 周德俭; 黄红艳

    2004-01-01

    Based on the modal analysis theory and by using the dynamics finite element analysis model of a three-dimensional assembly circuit module, dynamic characteristics of circuit module have been studied, including both natural characteristics analysis and dynamic responses analysis. Using a subspace method, modal analysis is first carried out. The first 6 orders of natural frequencies and vibration modes are obtained. Influence of the number of the Z-shaped metal slices on dynamic characteristics of the entire structure is also studied.Harmonic response analysis is then conducted. The steady-state response when the circuit module is subjected to harmonic excitation is determined. A curve of the response values against frequencies is obtained. As a result, the optimal number of Z-shaped metal slices can be determined, and it can be assured that the three-dimensional assembly circuit module has good performance in terms of the dynamic characteristics.

  20. Synthetic Space Vector Modulation

    Science.gov (United States)

    2013-06-01

    Modulation RF Radio Frequency SVM Space Vector Modulation VCO Voltage Controlled Oscillator VSI Voltage Source Inverter xvi THIS PAGE...examining the literature, an NE566 voltage controlled oscillator ( VCO ) chip as seen in Figure 10 was used to design a circuit that produced the

  1. The effect of conductor loss on half-wave voltage and modulation bandwidth of electro-optic modulators

    Institute of Scientific and Technical Information of China (English)

    Zilong Liu(刘子龙); Daqing Zhu(朱大庆)

    2004-01-01

    In this paper, we theoretically deduce the expressions of half-wave voltage and 3-dB modulation bandwidth in which conductor loss is taken into account. The results suggest that it will affect the theoretical values of half-wave voltage and bandwidth as well as the optimized electrode's dimension whether considering the conductor loss or not. As an example, we present a Mach-Zehnder (MZ) type polymer waveguide amplitude modulator. The half-wave voltage increases by 1 V and the 3-dB bandwidth decreases by 30% when the conductor loss is taken into account. Besides, the effects of impedance mismatching and velocity mismatching between microwave and light wave on the half-wave voltage, and 3-dB bandwidth are discussed.

  2. Space vector modulation strategy for neutral-point voltage balancing in three-level inverter systems

    DEFF Research Database (Denmark)

    Choi, Uimin; Lee, Kyo Beum

    2013-01-01

    This study proposes a space vector modulation (SVM) strategy to balance the neutral-point voltage of three-level inverter systems. The proposed method is implemented by combining conventional symmetric SVM with nearest three-vector (NTV) modulation. The conventional SVM is converted to NTV...... modulation by properly adding or subtracting a minimum gate-on time. In addition, using this method, the switching frequency is reduced and a decrease of switching loss would be yielded. The neutral-point voltage is balanced by the proposed SVM strategy without additional hardware or complex calculations...

  3. Analog Circuit Design Low Voltage Low Power; Short Range Wireless Front-Ends; Power Management and DC-DC

    CERN Document Server

    Roermund, Arthur; Baschirotto, Andrea

    2012-01-01

    The book contains the contribution of 18 tutorials of the 20th workshop on Advances in Analog Circuit Design.  Each part discusses a specific to-date topic on new and valuable design ideas in the area of analog circuit design. Each part is presented by six experts in that field and state of the art information is shared and overviewed. This book is number 20 in this successful series of Analog Circuit Design, providing valuable information and excellent overviews of Low-Voltage Low-Power Data Converters - Chaired by Prof. Anderea Baschirotto, University of Milan-Bicocca Short Range Wireless Front-Ends - Chaired by Prof. Arthur van Roermund, Eindhoven University of Technology Power management and DC-DC - Chaired by Prof. M. Steyaert, Katholieke University Leuven Analog Circuit Design is an essential reference source for analog circuit designers and researchers wishing to keep abreast with the latest development in the field. The tutorial coverage also makes it suitable for use in an advanced design.

  4. Investigation on the Short Circuit Safe Operation Area of SiC MOSFET Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Luo, Haoze; Iannuzzo, Francesco

    2016-01-01

    This paper gives a better insight of the short circuit capability of state-of-the-art SiC MOSFET power modules rated at 1.2 kV by highlighting the physical limits under different operating conditions. Two different failure mechanisms have been identified, both reducing the short-circuit capability......) of the studied SiC MOSFET power modules is formulated based on the two proposed criteria....

  5. Critical interfaces in organic solar cells and their influence on the open-circuit voltage.

    Science.gov (United States)

    Potscavage, William J; Sharma, Asha; Kippelen, Bernard

    2009-11-17

    Organic photovoltaics, which convert sunlight into electricity with thin films of organic semiconductors, have been the subject of active research over the past 20 years. The global energy challenge has greatly increased interest in this technology in recent years. Low-temperature processing of organic small molecules from the vapor phase or of polymers from solution can confer organic semiconductors with a critical advantage over inorganic photovoltaic materials since the high-temperature processing requirements of the latter limit the range of substrates on which they can be deposited. Unfortunately, despite significant advances, the power conversion efficiency of organic solar cells remains low, with maximum values in the range of 6%. A better understanding of the physical processes that determine the efficiency of organic photovoltaic cells is crucial to enhancing their competitiveness with other thin-film technologies. Maximum values for the photocurrent can be estimated from the light-harvesting capability of the individual molecules or polymers in the device. However, a better understanding of the materials-level processes, particularly those in layer-to-layer interfaces, that determine the open-circuit voltage (V(OC)) in organic solar cells is critical and remains the subject of active research. The conventional wisdom is to use organic semiconductors with smaller band gaps to harvest a larger portion of the solar spectrum. This method is not always an effective prescription for increasing efficiency: it ignores the fact that the value of V(OC) is generally decreased in devices employing materials with smaller band gaps, as is the case with inorganic semiconductors. In this Account, we discuss the influence of the different interfaces formed in organic multilayer photovoltaic devices on the value of V(OC); we use pentacene-C(60) solar cells as a model. In particular, we use top and bottom electrodes with different work function values, finding that V(OC) is

  6. The principle of elaboration of the relay protection against short circuits between the closely placed phases of high voltage electrical line

    Directory of Open Access Journals (Sweden)

    Kiorsak M.

    2015-12-01

    Full Text Available The article is devoted to the elaboration of the principle of relay protection against short circuits between the closely placed phases of higher voltage electrical line with self-compensation, based on the six phase’s symmetrical components. It is shown that the unsymmetrical short circuits between the closely placed phases are characterized by appearance of zero and tertiary sequences of symmetrical components. This fact can be used to choose them for relay protection. The electrical basic circuits and formulas for calculation of the passive parameters of zero and tertiary filters of currents (voltages are done. It is presented the structural-functional basic circuit scheme for relay protection against short circuits between the closely placed phases of higher voltage electrical line with self-compensation.

  7. Re-evaluating the role of sterics and electronic coupling in determining the open-circuit voltage of organic solar cells

    KAUST Repository

    Graham, Kenneth

    2013-07-30

    The effects of sterics and molecular orientation on the open-circuit voltage and absorbance properties of charge-transfer states are explored in model bilayer organic photovoltaics. It is shown that the open-circuit voltage correlates linearly with the charge-transfer state energy and is not significantly influenced by electronic coupling. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. The role of optoelectronic feedback on Franz-Keldysh voltage modulation of transistor lasers

    Science.gov (United States)

    Chang, Chi-Hsiang; Chang, Shu-Wei; Wu, Chao-Hsin

    2016-03-01

    Possessing both the high-speed characteristics of heterojunction bipolar transistors (HBTs) and enhanced radiative recombination of quantum wells (QWs), the light-emitting transistor (LET) which operates in the regime of spontaneous emissions has achieved up to 4.3 GHz modulation bandwidth. A 40 Gbit/s transmission rate can be even achieved using transistor laser (TL). The transistor laser provides not only the current modulation but also direct voltage-controlled modulation scheme of optical signals via Franz-Keldysh (FK) photon-assisted tunneling effect. In this work, the effect of FK absorption on the voltage modulation of TLs is investigated. In order to analyze the dynamics and optical responses of voltage modulation in TLs, the conventional rate equations relevant to diode lasers (DLs) are first modified to include the FK effect intuitively. The theoretical results of direct-current (DC) and small-signal alternating-current (AC) characteristics of optical responses are both investigated. While the DC characteristics look physical, the intrinsic optical response of TLs under the FK voltage modulation shows an AC enhancement with a 20 dB peak, which however is not observed in experiment. A complete model composed of the intrinsic optical transfer function and an electrical transfer function fed back by optical responses is proposed to explain the behaviors of voltage modulation in TLs. The abnormal AC peak disappears through this optoelectronic feedback. With the electrical response along with FK-included photon-carrier rate equations taken into account, the complete voltage-controlled optical modulation response of TLs is demonstrated.

  9. Degradation of Photovoltaic Modules Under High Voltage Stress in the Field: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    del Cueto, J. A.; Rummel, S. R.

    2010-08-01

    The degradation in performance for eight photovoltaic (PV) modules stressed at high voltage (HV) is presented. Four types of modules--tandem-junction and triple-junction amorphous thin-film silicon, plus crystalline and polycrystalline silicon modules--were tested, with a pair of each biased at opposite polarities. They were deployed outdoors between 2001 and 2009 with their respective HV leakage currents through the module encapsulation continuously monitored with a data acquisition system, along with air temperature and relative humidity. For the first 5 years, all modules were biased continuously at fixed 600 VDC, day and night. In the last 2 years, the modules were step-bias stressed cyclically up and down in voltage between 10 and 600 VDC, in steps of tens to hundreds of volts. This allowed characterization of leakage current versus voltage under a large range of temperature and moisture conditions, facilitating determination of leakage paths. An analysis of the degradation is presented, along with integrated leakage charge. In HV operation: the bulk silicon modules degraded either insignificantly or at rates of 0.1%/yr higher than modules not biased at HV; for the thin-film silicon modules, the added loss rates are insignificant for one type, or 0.2%/yr-0.6%/yr larger for the other type.

  10. On-line condition monitoring systems for high voltage circuit breakers : a collaborative research project 1997-2001

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-07-01

    A three year field project was initiated to review and evaluate the state of the art in on-line conditioning monitoring technology for a high voltage (240 kV SF6) circuit breaker located at Dorsey Converter Station. The ELF breaker is a three independent pole design which allows for three separate monitoring systems. This project involved the installation of a different type of monitoring system on each phase and incorporated many types of transducers. Each monitoring system measured the same basic parameters including contact travel, 'a' and 'b' auxiliary contacts, phase currents, coil currents, heater and pump current, plus SF6/CF4 pressure and temperature. Over the entire monitoring period the breaker was operated over 700 times at rated voltage and an additional 300 times during maintenance. Temperature conditions ranged from -35 to +30 degrees C. The use of on-line monitoring provided many valuable results and enhanced the knowledge base for the apparatus under the test. It was determined that on-line monitoring of HV circuit breakers has potential, but installation has to be considered carefully. Monitoring systems can offer improvement in the understanding of how circuit breakers work and provide input into RCM programs. However, monitoring systems themselves are subject to failure and require maintenance and attention. 2 refs., 2 tabs., 7 figs.

  11. Circuit-field coupled finite element analysis method for an electromagnetic acoustic transducer under pulsed voltage excitation

    Institute of Scientific and Technical Information of China (English)

    Hao Kuan-Sheng; Huang Song-Ling; Zhao Wei; Wang Shen

    2011-01-01

    This paper presents an analytical method for electromagnetic acoustic transducers (EMATs) under voltage excitation and considers the non-uniform distribution of the biased magnetic field. A complete model of EMATs including the non-uniform biased magnetic field, a pulsed eddy current field and the acoustic field is built up. The pulsed voltage excitation is transformed to the frequency domain by fast Fourier transformation (FFT). In terms of the time harmonic field equations of the EMAT system, the impedances of the coils under different frequencies are calculated according to the circuit-field coupling method and Poynting's theorem. Then the currents under different frequencies are calculated according to Ohm's law and the pulsed current excitation is obtained by inverse fast Fourier transformation (IFFT).Lastly, the sequentially coupled finite element method (FEM) is used to calculate the Lorentz force in the EMATs under the current excitation. An actual EMAT with a two-layer two-bundle printed circuit board (PCB) coil, a rectangular permanent magnet and an aluminium specimen is analysed. The coil impedances and the pulsed current are calculated and compared with the experimental results. Their agreement verified the validity of the proposed method. Furthermore, the influences of lift-off distances and the non-uniform static nagnetic field on the Lorentz force under pulsed voltage excitation are studied.

  12. Full wave analysis of non-radiative dielectric waveguide modulator for the determination of electrical equivalent circuit

    Indian Academy of Sciences (India)

    N P Pathak; A Basu; S K Koul

    2008-07-01

    This paper reports the determination of electrical equivalent circuit of ON/OFF modulator in non-radiative dielectric (NRD) guide configurations at Ka-band. Schottky barrier mixer diode is used to realize this modulator and its characteristics are determined experimentally using vector network analyzer. Full wave FEM simulator HFSS is used to determine an equivalent circuit for the mounted diode and modulator in ON and OFF states. This equivalent circuit is used to qualitatively explain the experimental characteristics of modulator.

  13. Variable Voltage Source Inverter with controlled frequency spectrum based on Random Pulse Width Modulation

    Directory of Open Access Journals (Sweden)

    Muhammad Farrukh Yaqub

    2012-01-01

    Full Text Available This paper presents a new method for single phase variable voltage inverter based on Random Pulse Width Modulation. In Random Pulse Width Modulation based inverter, the frequency spectrum of the output current and voltage waveforms becomes continuous because of the randomization of the switching function of the devices controlling the output voltages. This paper establishes a theory that if the distributions of the random numbers generated by the random source are kept within certain limit with respect to the peak value of reference sinusoidal waveform, the frequency spectrum can be controlled. On the basis of the results, a novel drive using variable tap changing transformer (optional and adaptive random number generator, to control the ratio between the numbers generated by the random source and the reference waveform has been suggested that will guarantee a better power quality profile for a broad range of output voltages.

  14. FPGA techniques based new hybrid modulation strategies for voltage source inverters.

    Science.gov (United States)

    Sudha, L U; Baskaran, J; Elankurisil, S A

    2015-01-01

    This paper corroborates three different hybrid modulation strategies suitable for single-phase voltage source inverter. The proposed method is formulated using fundamental switching and carrier based pulse width modulation methods. The main tale of this proposed method is to optimize a specific performance criterion, such as minimization of the total harmonic distortion (THD), lower order harmonics, switching losses, and heat losses. The proposed method is articulated using fundamental switching and carrier based pulse width modulation methods. Thus, the harmonic pollution in the power system will be reduced and the power quality will be augmented with better harmonic profile for a target fundamental output voltage. The proposed modulation strategies are simulated in MATLAB r2010a and implemented in a Xilinx spartan 3E-500 FG 320 FPGA processor. The feasibility of these modulation strategies is authenticated through simulation and experimental results.

  15. InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage

    Institute of Scientific and Technical Information of China (English)

    Zhang Xiao-Bin; Wang Xiao-Liang; Xiao Hong-Ling; Yang Cui-Bai; Hou Qi-Feng; Yin Hai-Bo; Chen Hong; Wang Zhan-Guo

    2011-01-01

    In this paper, InGaN/GaN multiple quantum well solar cells (MQWSCs) with an In content of 0.15 are fabricated and studied. The short-circuit density, fill factor and open-circuit voltage (Voc) of the device are 0.7 mA/cm2, 0.40 and 2.22 V, respectively. The results exhibit a significant enhancement of Voc compared with those of InGaN-based hetero and homojunction cells. This enhancement indicates that the InGaN/GaN MQWSC offers an effective way for increasing Voc of an In-rich InxGa1-xN solar cell. The device exhibits an external quantum efficiency (EQE) of 36% (7%) at 388 nm (430 nm). The photovoltaic performance of the device can be improved by optimizing the structure of the InGaN/GaN multiple quantum well.

  16. Charged grain boundaries reduce the open-circuit voltage of polycrystalline solar cells—An analytical description

    Science.gov (United States)

    Gaury, Benoit; Haney, Paul M.

    2016-12-01

    Analytical expressions are presented for the dark current-voltage relation J(V) of a pn+ junction with positively charged columnar grain boundaries with high defect density. These expressions apply to non-depleted grains with sufficiently high bulk hole mobilities. The accuracy of the formulas is verified by direct comparison to numerical simulations. Numerical simulations further show that the dark J(V) can be used to determine the open-circuit potential Voc of an illuminated junction for a given short-circuit current density Jsc . A precise relation between the grain boundary properties and Voc is provided, advancing the understanding of the influence of grain boundaries on the efficiency of thin film polycrystalline photovoltaics like CdTe and Cu(In,Ga)Se2 .

  17. Low-Power Circuit Techniques for Low-Voltage Pipelined ADCs Based on Switched-Opamp Architecture

    Science.gov (United States)

    Ou, Hsin-Hung; Chang, Soon-Jyh; Liu, Bin-Da

    This paper proposes useful circuit structures for achieving a low-voltage/low-power pipelined ADC based on switched-opamp architecture. First, a novel unity-feedback-factor sample-and-hold which manipulates the features of switched-opamp technique is presented. Second, opamp-sharing is merged into switched-opamp structure with a proposed dual-output opamp configuration. A 0.8-V, 9-bit, 10-Msample/s pipelined ADC is designed to verify the proposed circuit. Simulation results using a 0.18-μm CMOS 1P6M process demonstrate the figure-of-merit of this pipelined ADC is only 0.71pJ/step.

  18. Control Strategy for Three Phase Voltage Source PWM Rectifier Based on the Space Vector Modulation

    Directory of Open Access Journals (Sweden)

    MILOUD, Y.

    2010-08-01

    Full Text Available This paper proposes the space vector pulse width modulation (SVPWM control scheme for three-phase voltage source PWM rectifier. The control system based on SVPWM includes two PI controllers which are used to regulate the AC currents and DC-link voltage. The proposed control can stabilize the minimum of the systems storage function at the desired equilibrium point determined by unity power factor and sinusoidal current on the AC side, and constant output voltage on the DC side. So the stable state performance and robustness against the load�s disturbance of PWM rectifiers are both improved. The simulation result shows feasibility of this strategy.

  19. State Evaluation Method Based on Multiagent System for High Voltage Circuit Breaker's Mechanical Properties

    Institute of Scientific and Technical Information of China (English)

    LI Bin; LIN Xin; XU Jianyuan; QI Hongwei; ZHANG Bin

    2013-01-01

    To realize multi-signal joint diagnosis in circuit breaker's state evaluation methods,and to improve their evaluation accuracy,we proposed an intelligent evaluation model of circuit breaker mechanical properties based on multiagent system.Taking a circuit breaker which has mono-stable permanent magnetic operating mechanism as the example,its model involves four kinds of signals:auxiliary contact,operating mechanism current,travel of the contact,and mechanical vibration.Detailed analyses on the evaluation agent's architecture and the process of the system's multiagent evaluation and ratiocination were also proposed.Moreover,it is proved by three application cases that the proposed method could accurately evaluate circuit breaker status not only with normal signals,but also in certain signal failure situations; meanwhile the model has a strong self-learning ability.

  20. Comparative Study of Online Open Circuit Voltage Estimation Techniques for State of Charge Estimation of Lithium-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Hicham Chaoui

    2017-04-01

    Full Text Available Online estimation techniques are extensively used to determine the parameters of various uncertain dynamic systems. In this paper, online estimation of the open-circuit voltage (OCV of lithium-ion batteries is proposed by two different adaptive filtering methods (i.e., recursive least square, RLS, and least mean square, LMS, along with an adaptive observer. The proposed techniques use the battery’s terminal voltage and current to estimate the OCV, which is correlated to the state of charge (SOC. Experimental results highlight the effectiveness of the proposed methods in online estimation at different charge/discharge conditions and temperatures. The comparative study illustrates the advantages and limitations of each online estimation method.

  1. Correlation between LUMO offset of donor/acceptor molecules to an open circuit voltage in bulk heterojunction solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Mola, Genene Tessema, E-mail: mola@ukzn.ac.za [School of. Chemistry and Physics, University of Kwazulu-Natal, Pietermaritzburg Campus, Private Bag X01, Scottsville 3209 (South Africa); Abera, Newayemedhin [Addis Ababa University, Department of Physics, P.O. BOX 1176, Addis Ababa (Ethiopia)

    2014-07-15

    The correlation between the open circuit voltage and the LUMO offset of the donor and acceptor polymers in the bulkheterojunction solar cell was studied for three different thiophene derivatives. The HOMO levels of all the polymers in this investigation were chosen to be similar which results in close values of ΔE{sub DA}=E{sub HOMO}{sup D}−E{sub LUMO}{sup A}. However, the measured V{sub oc} was found to be increasing with decreasing value of the LUMO offset that exists between the donor polymer and fullerene.

  2. An Azulene-Containing Low Bandgap Small Molecule for Organic Photovoltaics with High Open-Circuit Voltage.

    Science.gov (United States)

    Chen, Yao; Zhu, Youqin; Yang, Daobin; Zhao, Suling; Zhang, Lei; Yang, Lin; Wu, Jianglin; Huang, Yan; Xu, Zheng; Lu, Zhiyun

    2016-10-01

    A simple azulene-containing squaraine dye (AzUSQ) showing bandgap of 1.38 eV and hole mobility up to 1.25×10(-4)  cm(2)  V(-1)  s(-1) was synthesized. With its low bandgap, an organic photovoltaic (OPV) device based on it has been made that exhibits an impressive open-circuit voltages (Voc ) of 0.80 V. Hence, azulene might be a promising structural unit to construct OPV materials with simultaneous low bandgap, high hole mobility and high Voc .

  3. Hysteresis observed in quasi open-circuit voltage measurements of lithium insertion in hydrogen-containing carbons

    Energy Technology Data Exchange (ETDEWEB)

    Zheng Tao; Dahn, J.R. [Dalhousie Univ., Halifax, NS (Canada). Dept. of Physics

    1997-10-01

    High capacities with large hysteresis were observed during lithium insertion in hydrogen-containing carbons heated at temperatures near 700 C. Quasi open-circuit voltage (OCV) measurements were used to study these materials. Using a simple model developed previously, we can qualitatively model the result of the OCV measurement. It is believed that the lithium atoms bind near aromatic hydrogen at edge of each graphene layer in the materials. This activated process involves a carbon-carbon bonding change from (sp){sup 2} to (sp){sup 3} leading to large hysteresis during lithium insertion. (orig.)

  4. Low voltage logic circuits exploiting gate level dynamic body biasing in 28 nm UTBB FD-SOI

    Science.gov (United States)

    Taco, Ramiro; Levi, Itamar; Lanuzza, Marco; Fish, Alexander

    2016-03-01

    In this paper, the recently proposed gate level body bias (GLBB) technique is evaluated for low voltage logic design in state-of-the-art 28 nm ultra-thin body and box (UTBB) fully-depleted silicon-on-insulator (FD-SOI) technology. The inherent benefits of the low-granularity body-bias control, provided by the GLBB approach, are emphasized by the efficiency of forward body bias (FBB) in the FD-SOI technology. In addition, the possibility to integrate PMOS and NMOS devices into a single common well configuration allows significant area reduction, as compared to an equivalent triple well implementation. Some arithmetic circuits were designed using GLBB approach and compared to their conventional CMOS and DTMOS counterparts under different running conditions at low voltage regime. Simulation results shows that, for 300 mV of supply voltage, a 4 × 4-bit GLBB Baugh Wooley multiplier allows performance improvement of about 30% and area reduction of about 35%, while maintaining low energy consumption as compared to the conventional CMOS ⧹ DTMOS solutions. Performance and energy benefits are maintained over a wide range of process-voltage-temperature (PVT) variations.

  5. Principle and Fault Analysis of Voltage Regulator Circuit%电压调节器电路原理及故障分析

    Institute of Scientific and Technical Information of China (English)

    索明何

    2015-01-01

    Firstly, the paper explores the essential characteristics of voltage regulator through experiments, and then analyzes the circuit principle of the voltage regulator. The paper finally discusses the fault analysis method of voltage regulator circuit through the cases.%本文首先通过实验探究电压调节器的本质特性,然后分析电压调节器电路原理,最后通过案例探究电压调节器电路的故障分析方法.

  6. Optimization of Modulator and Circuits for Low Power Continuous-Time Delta-Sigma ADC

    DEFF Research Database (Denmark)

    Marker-Villumsen, Niels; Bruun, Erik

    2014-01-01

    This paper presents a new optimization method for achieving a minimum current consumption in a continuous-time Delta-Sigma analog-to-digital converter (ADC). The method is applied to a continuous-time modulator realised with active-RC integrators and with a folded-cascode operational transconduc......- tance amplifier (OTA). Based on a detailed circuit analysis of the integrator and the OTA, key expression are derived relating the biasing current of the OTA to the noise requirements of the integrator. In the optimization the corner frequency of the modulator loop filter and the number of quantizer...... levels are swept. Based on the results of the circuit analysis, for each modulator combination the summed current consumption of the 1st integrator and quantizer of the ADC is determined. By also sweeping the partitioning of the noise power for the different circuit parts, the optimum modulator...

  7. Hybrid Design Optimization of High Voltage Pulse Transformers for Klystron Modulators

    CERN Document Server

    Sylvain, Candolfi; Davide, Aguglia; Jerome, Cros

    2015-01-01

    This paper presents a hybrid optimization methodology for the design of high voltage pulse transformers used in klystron modulators. The optimization process is using simplified 2D FEA design models of the 3D transformer structure. Each intermediate optimal solution is evaluated by 3D FEA and correction coefficients of the 2D FEA models are derived. A new optimization process using 2D FEA models is then performed. The convergence of this hybrid optimal design methodology is obtained with a limited number of time consuming 3D FEA simulations. The method is applied to the optimal design of a monolithic high voltage pulse transformer for the CLIC klystron modulator.

  8. Circuits protection against interferences in high voltage substations; Protecao de circuitos contra interferencias em subestacoes

    Energy Technology Data Exchange (ETDEWEB)

    Hamada, Massayuki [Consultas e Aplicacoes de Engenharia Eletrica Ltda. (CAEEL) (Brazil)

    1989-12-01

    This paper makes a brief analysis of the different phenomena which may cause electromagnetic interference in high voltage substations and suggests adequate solutions to the problem according to the different events that may occur. 5 refs., 1 fig.

  9. Control strategy and hardware implementation for DC–DC boost power circuit based on proportional–integral compensator for high voltage application

    Directory of Open Access Journals (Sweden)

    Sanjeevikumar Padmanaban

    2015-06-01

    Full Text Available For high-voltage (HV applications, the designers mostly prefer the classical DC–DC boost converter. However, it lacks due to the limitation of the output voltage by the gain transfer ratio, decreased efficiency and its requirement of two sensors for feedback signals, which creates complex control scheme with increased overall cost. Furthermore, the output voltage and efficiency are reduced due to the self-parasitic behavior of power circuit components. To overcome these drawbacks, this manuscript provides, the theoretical development and hardware implementation of DC–DC step-up (boost power converter circuit for obtaining extra output-voltage high-performance. The proposed circuit substantially improves the high output-voltage by voltage-lift technology with a closed loop proportional–integral controller. This complete numerical model of the converter circuit including closed loop P-I controller is developed in simulation (Matlab/Simulink software and the hardware prototype model is implemented with digital signal processor (DSP TMS320F2812. A detailed performance analysis was carried out under both line and load regulation conditions. Numerical simulation and its verification results provided in this paper, prove the good agreement of the circuit with theoretical background.

  10. High performance dc-dc conversion with voltage multipliers. [using transformerless capacitor diode circuit

    Science.gov (United States)

    Harrigill, W. T., Jr.; Myers, I. T.

    1974-01-01

    An experimental 100W 1000V dc-dc converter using a capacitor diode voltage multipler (CDVM) with a nominal frequency of 100 kHz is studied. A component weight of about 1 kg/kW was obtained. Design equations for current, output -ripple and -power, efficiency and output voltage are derived. Agreement between experimental results and calculations is fairly good except for ripple.

  11. Activity-dependent modulation of neural circuit synaptic connectivity

    Directory of Open Access Journals (Sweden)

    Charles R Tessier

    2009-07-01

    Full Text Available In many nervous systems, the establishment of neural circuits is known to proceed via a two-stage process; 1 early, activity-independent wiring to produce a rough map characterized by excessive synaptic connections, and 2 subsequent, use-dependent pruning to eliminate inappropriate connections and reinforce maintained synapses. In invertebrates, however, evidence of the activity-dependent phase of synaptic refinement has been elusive, and the dogma has long been that invertebrate circuits are “hard-wired” in a purely activity-independent manner. This conclusion has been challenged recently through the use of new transgenic tools employed in the powerful Drosophila system, which have allowed unprecedented temporal control and single neuron imaging resolution. These recent studies reveal that activity-dependent mechanisms are indeed required to refine circuit maps in Drosophila during precise, restricted windows of late-phase development. Such mechanisms of circuit refinement may be key to understanding a number of human neurological diseases, including developmental disorders such as Fragile X syndrome (FXS and autism, which are hypothesized to result from defects in synaptic connectivity and activity-dependent circuit function. This review focuses on our current understanding of activity-dependent synaptic connectivity in Drosophila, primarily through analyzing the role of the fragile X mental retardation protein (FMRP in the Drosophila FXS disease model. The particular emphasis of this review is on the expanding array of new genetically-encoded tools that are allowing cellular events and molecular players to be dissected with ever greater precision and detail.

  12. Design of a microelectronic circuit to amplify and modulate the signal of a micro-electro-mechanical systems arterial pressure sensor

    Science.gov (United States)

    Vela-Peóa, E.; Quiñones-Urióstegui, I.; Martínez-Piñon, F.; Álvarez-Chávez, J. A.

    2010-04-01

    In the article, the design and stimulation is presented of an integrated circuit for the amplification and modulation of an electrical signal proceeding from a Micro-Electro-Mechanical Systems (MEMS) arterial pressure sensor. The signal consists of voltage ranking from 0-10 mV, 1 mA and frequency of 50- 500 Hz. This simple but effective design consists of an operational amplifier (op-amp) configured as a differential amplifier, which amplifies the signal (up to 1V and 10 mA), originating from a Wheatstone bridge in the MEMS sensor, and then this signal is modulated by Pulse width modulation (PWM). The technology employed in this circuit is MOSIS AMIS 1.5 um. The circuit was designed with a two-state op-amp, which is utilized in diverse stages of the system. The use of a differential amplifier, the op-amp, and PWM simplifies the design and renders this compact due to the employment of few components (40 transistors). The use of the PWM facilitates the signaling process at later stages. Results comprise the design of the circuit and the simulation. This consists of a schematic diagram of the layers of all the rules specified in the MOSIS AMIS 1.5 um. Electric and LTSpice software was employed for the design and simulation of the circuit. We present a complete description of the design philosophy, design criteria, figures, and final results.

  13. Voltage inverter with push-pull topology to inject energy into electrical systems with modulation SPWM

    Directory of Open Access Journals (Sweden)

    Emerson Charles M. Silva

    2013-09-01

    Full Text Available This paper presents a proposal for a voltage inverter topology based on push-pull converters, switched at high frequency to inject energy into the grid from a source of DC power. A system using two reverse voltage static converters provides the power grid; energy in the form of alternating current, that can work in conjunction with the provision of utility power. Aiming at the possible use of renewable energy sources, that can be stored in the form of voltage continuous, such as wind, solar, hydroelectric and others. The functioning of topology is presented, such as the power and control circuits, as well as sizing components, theoretical and practical results achieved with the assembly of a prototype 100W of power and switching in 40khz, which after filtering provides the frequency of 60Hz, which is compatible with the Brazilian electrical system.

  14. Comparative Performance Analysis of XOR-XNOR Function Based High-Speed CMOS Full Adder Circuits For Low Voltage VLSI Design

    Directory of Open Access Journals (Sweden)

    Sudarshan Tiwari

    2012-05-01

    Full Text Available This paper presents comparative study of high-speed, low-power and low voltage full adder circuits. Our approach is based on XOR-XNOR design full adder circuits in a single unit. A low power and high performance 9T full adder cell using a design style called “XOR (3T” is discussed. The designed circuit commands a high degree of regularity and symmetric higher density than the conventional CMOS design style as well as it lowers power consumption by using XOR (3T logic circuits. Gate Diffusion Input (GDI technique of low-power digital combinatorial circuit design is also described. This technique helps inreducing the power consumption and the area of digital circuits while maintaining low complexity of logic design. This paper analyses, evaluates and compares the performance of various adder circuits. Severalsimulations conducted using different voltage supplies, load capacitors and temperature variation demonstrate the superiority of the XOR (3T based full adder designs in term of delay, power and powerdelay product (PDP compared to the other full adder circuits. Simulation results illustrate the superiority of the designed adder circuits against the conventional CMOS, TG and Hybrid full adder circuits in terms of power, delay and power delay product (PDP.

  15. DC-bus voltage control of grid-connected voltage source converter by using space vector modulated direct power control under unbalanced network conditions

    DEFF Research Database (Denmark)

    Xiao, Lei; Huang, Shoudao; Lu, Kaiyuan

    2013-01-01

    Unbalanced grid voltage will cause large dc-bus voltage ripple and introduce high harmonic current components on the grid side. This will severely threaten the safety of the grid-connected voltage source converter (VSC) and consequently, affect the healthy operation condition of the load. In this......Unbalanced grid voltage will cause large dc-bus voltage ripple and introduce high harmonic current components on the grid side. This will severely threaten the safety of the grid-connected voltage source converter (VSC) and consequently, affect the healthy operation condition of the load....... In this study, a new proportional-integral-resonant (PI-RES) controller-based, space vector modulated direct power control topology is proposed to suppress the dc-bus voltage ripple and in the same time, controlling effectively the instantaneous power of the VSC. A special ac reactive power reference component...

  16. FPGA Techniques Based New Hybrid Modulation Strategies for Voltage Source Inverters

    OpenAIRE

    Sudha, L. U.; J. Baskaran; Elankurisil, S. A.

    2015-01-01

    This paper corroborates three different hybrid modulation strategies suitable for single-phase voltage source inverter. The proposed method is formulated using fundamental switching and carrier based pulse width modulation methods. The main tale of this proposed method is to optimize a specific performance criterion, such as minimization of the total harmonic distortion (THD), lower order harmonics, switching losses, and heat losses. The proposed method is articulated using fundamental switch...

  17. Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production

    Directory of Open Access Journals (Sweden)

    F. Urbain

    2014-01-01

    Full Text Available Hydrogenated amorphous silicon thin film tandem solar cells (a-Si:H/a-Si:H have been developed with focus on high open-circuit voltages for the direct application as photocathodes in photoelectrochemical water splitting devices. By temperature variation during deposition of the intrinsic a-Si:H absorber layers the band gap energy of a-Si:H absorber layers, correlating with the hydrogen content of the material, can be adjusted and combined in a way that a-Si:H/a-Si:H tandem solar cells provide open-circuit voltages up to 1.87 V. The applicability of the tandem solar cells as photocathodes was investigated in a photoelectrochemical cell (PEC measurement set-up. With platinum as a catalyst, the a-Si:H/a-Si:H based photocathodes exhibit a high photocurrent onset potential of 1.76 V versus the reversible hydrogen electrode (RHE and a photocurrent of 5.3 mA/cm2 at 0 V versus RHE (under halogen lamp illumination. Our results provide evidence that a direct application of thin film silicon based photocathodes fulfills the main thermodynamic requirements to generate hydrogen. Furthermore, the presented approach may provide an efficient and low-cost route to solar hydrogen production.

  18. Improving open-circuit voltage in DSSCs using Cu-doped TiO{sub 2} as a semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Navas, J.; Fernandez-Lorenzo, C.; Aguilar, T.; Alcantara, R.; Martin-Calleja, J. [Physical Chemistry Department, Science Faculty, University of Cadiz, Campus Universitario de Puerto Real, Cadiz (Spain)

    2012-02-15

    TiO{sub 2} doping has been widely used in photocatalysis and photovoltaic cells to improve the performance of this semiconductor. This paper studies the use of copper as a dopant in TiO{sub 2} in dye-sensitized solar cells (DSSC), analysing the effect on the photovoltaic properties of the cells of different concentrations of copper incorporated into the semiconductor. The copper-doped TiO{sub 2} semiconductor was characterized with several instrumental techniques, including X-ray diffraction (XRD), inductively coupled plasma atomic emission spectroscopy (ICP-AES), scanning transmission electron microscopy (STEM), and UV-Vis spectroscopy in order to know its structure, composition and band gap energies with different concentrations of the dopant. An analysis was also performed of the variations in open-circuit voltage depending on the concentration of copper. This showed that the presence of copper in DSSCs made with a standard configuration - using a ruthenium complex (N3) as a dye and the redox pair I{sup -}/I{sub 3}{sup -} as the electrolyte with 3-methoxypropionitrile as a solvent - leads to improvements of up to 10% in the open-circuit voltage of DSSCs. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. A Core Circuit Module for Cost/Benefit Decision

    Directory of Open Access Journals (Sweden)

    Keiko eHirayama

    2012-08-01

    Full Text Available A simple circuit for cost-benefit decision derived from behavioral and neural studies of the predatory sea-slug Pleurobranchaea may closely resemble that upon which the more complex valuation and decision processes of the social vertebrates are built. The neuronal natures of the pathways in the connectionist model comprise classic central pattern generators, bipolar switch mechanisms, and neuromodulatory state regulation. Marked potential exists for exploring more complex neuroeconomic behavior by appending appropriate circuitry in simulo.

  20. SEMICONDUCTOR INTEGRATED CIRCUITS A low-voltage sense amplifier for high-performance embedded flash memory

    Science.gov (United States)

    Jiang, Liu; Xueqiang, Wang; Qin, Wang; Dong, Wu; Zhigang, Zhang; Liyang, Pan; Ming, Liu

    2010-10-01

    This paper presents a sense amplifier scheme for low-voltage embedded flash (eFlash) memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current. The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process, and the sense time is 0.43 ns at 1.5 V, corresponding to a 46% improvement over the conventional technologies.

  1. High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

    Science.gov (United States)

    Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

    2016-10-01

    Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

  2. Voltage Sag Mitigation Using Pulse Width Modulation Switched Autotransformer through Matlab Simulation

    Directory of Open Access Journals (Sweden)

    P. Shyam Kiran

    2014-04-01

    Full Text Available In this paper, a new voltage sag compensator for critical loads in electrical distribution system discussed. The proposed scheme employs a Pulse width modulation ac-ac converter along with a auto transformer. During a disturbance such as voltage sag, the proposed scheme supplies the missing voltage and helps in maintaining the rated voltage at the terminals of the critical load. Under normal condition the approach work in bypass mode and delivering utility power directly to load. The proposed system has less number of switching devices and has good compensating capability in comparison to commonly used compensators. Simulation analysis of three-phase compensator is performed in MATLAB/SIMULINK and performance analysis of the system is presented for various levels of sag and swell.

  3. Improving Transient Recovery voltage of circuit breaker using Fault Current Limiter

    Directory of Open Access Journals (Sweden)

    Amir Heidary

    2012-12-01

    Full Text Available This study investigates influence of Fault Current Limiter (FCL on short-circuits current level of substation bus bar splitter circuit breaker and its TRV. An approach for TRV evaluation is developed and applied for proposed power system as shown in this study. FCL circuit is connected to the power system in order to limit TRV. The limiter circuit consists of two equal windings which are turned around unique magnetic core. One of the windings is connected in series with the power system network and the other is connected to the network via series capacitor and power electronic switches. During normal operating condition, both tyristors are in on state and current of the primary and secondary windings are equal. This causes zero impedance of the limiter. During fault, faults current cause the power electronic switch to turn off which increases the limiter impedance. By increasing the limiter impedance, amplitude of TRV decreases substantially. The novel method presented in this study is a cheap and successful scheme.

  4. Approach for electrodynamic force for compensation in low voltage circuit breaker WP 630-1.2 type

    Institute of Scientific and Technical Information of China (English)

    LU Na; XU L.J.; Miedzi(n)ski B.

    2007-01-01

    Undesirable repulsive force between contact members due to both a current path shrink near a real contact area and/or so-called pinch effect is particularly onerous for power switch applications, and results in either contact floating or bouncing which are associated with an electric arc following contact welding. This problem is of great importance for any circuit breaker especially for compact low voltage vacuum circuit breakers. To avoid contact floating at closure and during any inrush current under short circuit conditions, the electrodynamic repulsive force can be employed successfully if we use a special compensation system flexibly combined with the contact itself. However to select and design the compensation system properly, its efficiency has to be known. This paper presents an approach to obtain the electrodynamic force value depending on different shaped (rectangular,square, circle and arch) copper plates used in the compensator by using ANSYS for current values 40 kA RMS. Curve-fitting was done according to the calculating results, the optimization designing of compensation unit is based on them.

  5. Fault Modeling and Testing for Analog Circuits in Complex Space Based on Supply Current and Output Voltage

    Directory of Open Access Journals (Sweden)

    Hongzhi Hu

    2015-01-01

    Full Text Available This paper deals with the modeling of fault for analog circuits. A two-dimensional (2D fault model is first proposed based on collaborative analysis of supply current and output voltage. This model is a family of circle loci on the complex plane, and it simplifies greatly the algorithms for test point selection and potential fault simulations, which are primary difficulties in fault diagnosis of analog circuits. Furthermore, in order to reduce the difficulty of fault location, an improved fault model in three-dimensional (3D complex space is proposed, which achieves a far better fault detection ratio (FDR against measurement error and parametric tolerance. To address the problem of fault masking in both 2D and 3D fault models, this paper proposes an effective design for testability (DFT method. By adding redundant bypassing-components in the circuit under test (CUT, this method achieves excellent fault isolation ratio (FIR in ambiguity group isolation. The efficacy of the proposed model and testing method is validated through experimental results provided in this paper.

  6. Study on Pulse Skip Modulation Mode in Smart Power Integrated Circuits and Its Test Technology

    Institute of Scientific and Technical Information of China (English)

    LUO Ping

    2005-01-01

    @@ Up to now, the popular control modes for smart power integrated circuit (SPIC) are PWM and PFM.PWM bases on constant frequency variable width (CFVW) control pulse, whereas, PFM bases on constant width variable frequency (CWVF) control pulse. PWM converter has low efficiency with light loads and high amplitude harmonic. On the other hand,the control circuit and filter for PFM are much complex. This dissertation proposes a novel modulation mode named pulse skip modulation (PSM)for SPIC converter, which bases on constant width constant frequency (CWCF) control pulse. It is shown that PSM converter would improve its efficiency and suppress EMI. It also has quick response speed, good interfere rejection and strong robust. Furthermore, it is easy to realize PSM control circuit. The modulating theories of PSM are firstly studied in the world according to the author's investigation.

  7. 电容降压式电路的设计原理%Design principle of capacitor-depressing-voltage circuit

    Institute of Scientific and Technical Information of China (English)

    杨海明; 杨国志; 李悦; 舒德泉

    2013-01-01

    Compared with the power transformer,capacitor-depressing-voltage circuit has a small size,economical and reliable power,high efficiency,so is often used.By analysis the circuit theory of capacitor-depressing-voltage DC power supply circuit under sinusoidal AC,this paper presented the three circuit schematic of capacitor-depressing-voltage DC power supply circuit,and summed up the conditions of use,component requirements,design parameters and notes about capacitor-depressing-voltage DC power supply circuit.%与电源变压器降压相比,电容降压具有电源体积小、经济、可靠、效率高等优点,所以常被使用.通过分析电容降压式直流电源电路在正弦交流电下的电路原理,给出三种电容降压式直流电源电路的原理图,并总结出设计电容降压式直流电源的使用条件、元器件要求、设计参数和注意事项.

  8. High Voltage Distribution

    Science.gov (United States)

    Norbeck, Edwin; Miller, Michael; Onel, Yasar

    2010-11-01

    For detector arrays that require 5 to 10 kV at a few microamps each for hundreds of detectors, using hundreds of HV power supplies is unreasonable. Bundles of hundreds of HV cables take up space that should be filled with detectors. A typical HV module can supply 1 ma, enough current for hundreds of detectors. It is better to use a single HV module and distribute the current as needed. We show a circuit that, for each detector, measures the current, cuts off the voltage if the current exceeds a set maximum, and allows the HV to be turned on or off from a control computer. The entire array requires a single HV cable and 2 or 3 control lines. This design provides the same voltage to all of the detectors, the voltage set by the single HV module. Some additional circuitry would allow a computer controlled voltage drop between the HV and each individual detector.

  9. Complementary circuits based on solution processed low-voltage organic field-effect transistors

    NARCIS (Netherlands)

    Ball, James M.; Wöbkenberg, Paul H.; Kooistra, Floris B.; Hummelen, Jan C.; Leeuw, Dago M. de; Bradley, Donal D.C.; Anthopoulos, Thomas D.

    2009-01-01

    The field of organic electronics is advancing quickly towards ultra low-cost, low-end applications and is expected to provide the necessary technology required for flexible/printed electronics. Here we address the need for solution processed low-voltage complementary logic in order to reduce power c

  10. Olfactory systems and neural circuits that modulate predator odor fear.

    Science.gov (United States)

    Takahashi, Lorey K

    2014-01-01

    When prey animals detect the odor of a predator a constellation of fear-related autonomic, endocrine, and behavioral responses rapidly occur to facilitate survival. How olfactory sensory systems process predator odor and channel that information to specific brain circuits is a fundamental issue that is not clearly understood. However, research in the last 15 years has begun to identify some of the essential features of the sensory detection systems and brain structures that underlie predator odor fear. For instance, the main (MOS) and accessory olfactory systems (AOS) detect predator odors and different types of predator odors are sensed by specific receptors located in either the MOS or AOS. However, complex predator chemosignals may be processed by both the MOS and AOS, which complicate our understanding of the specific neural circuits connected directly and indirectly from the MOS and AOS to activate the physiological and behavioral components of unconditioned and conditioned fear. Studies indicate that brain structures including the dorsal periaqueductal gray (DPAG), paraventricular nucleus (PVN) of the hypothalamus, and the medial amygdala (MeA) appear to be broadly involved in predator odor induced autonomic activity and hypothalamic-pituitary-adrenal (HPA) stress hormone secretion. The MeA also plays a key role in predator odor unconditioned fear behavior and retrieval of contextual fear memory associated with prior predator odor experiences. Other neural structures including the bed nucleus of the stria terminalis and the ventral hippocampus (VHC) appear prominently involved in predator odor fear behavior. The basolateral amygdala (BLA), medial hypothalamic nuclei, and medial prefrontal cortex (mPFC) are also activated by some but not all predator odors. Future research that characterizes how distinct predator odors are uniquely processed in olfactory systems and neural circuits will provide significant insights into the differences of how diverse predator

  11. A polymer electro-optic modulator with ultra wide-band and low driving voltage

    Institute of Scientific and Technical Information of China (English)

    Kambiz Abedi; Habib Vahidi

    2011-01-01

    In this paper,a polymer electro optic modulator is designed and simulated using the full vectorial finite element method.First order edge elements are used in finite element implementation,and the finite element technique is used to obtain modulator response thoroughly.From the numerical analysis,frequency dispersions of modulator's important parameters,such as microwave effective index nm,microwave characteristic impedance Zt and microwave loss α,are extracted.Our design exhibits electrical bandwidth of 260 GHz and drive voltage of about 2.8 V·cm in this frequency.

  12. Molecular Dynamics Simulations of Voltage Gated Cation Channels: Insights on Voltage-Sensor Domain Function and Modulation

    Directory of Open Access Journals (Sweden)

    Lucie eDelemotte

    2012-05-01

    Full Text Available Since their discovery in the 1950s, the structure and function of voltage gated cation channels (VGCC has been largely understood thanks to results stemming from electrophysiology, pharmacology, spectroscopy and structural biology. Over the past decade, computational methods such as molecular dynamics (MD simulations have also contributed, providing molecular level information that can be tested against experimental results, thereby allowing the validation of the models and protocols. Importantly, MD can shed light on elements of VGCC function that cannot be easily accessed through classical experiments. Here, we review the results of recent MD simulations addressing key questions that pertain to the function and modulation of the VGCC’s voltage sensor domain (VSD highlighting: 1 the movement of the S4-helix basic residues during channel activation, articulating how the electrical driving force acts upon them; 2 the nature of the VSD intermediate states on transitioning between open and closed states of the VGCC; and 3 the molecular level effects on the VSD arising from mutations of specific S4 positively charged residues involved in certain genetic diseases.

  13. Robust Sequential Circuits Design Technique for Low Voltage and High Noise Scenarios

    Directory of Open Access Journals (Sweden)

    Garcia-Leyva Lancelot

    2016-01-01

    In this paper we introduce an innovative input and output data redundancy principle for sequential block circuits, the responsible to keep the state of the system, showing its efficiency in front of other robust technique approaches. The methodology is totally different from the Von Neumann approaches, because element are not replicated N times, but instead, they check the coherence of redundant input data no allowing data propagation in case of discrepancy. This mechanism does not require voting devices.

  14. Flufenamic acid decreases neuronal excitability through modulation of voltage-gated sodium channel gating.

    Science.gov (United States)

    Yau, Hau-Jie; Baranauskas, Gytis; Martina, Marco

    2010-10-15

    The electrophysiological phenotype of individual neurons critically depends on the biophysical properties of the voltage-gated channels they express. Differences in sodium channel gating are instrumental in determining the different firing phenotypes of pyramidal cells and interneurons; moreover, sodium channel modulation represents an important mechanism of action for many widely used CNS drugs. Flufenamic acid (FFA) is a non-steroidal anti-inflammatory drug that has been long used as a blocker of calcium-dependent cationic conductances. Here we show that FFA inhibits voltage-gated sodium currents in hippocampal pyramidal neurons; this effect is dose-dependent with IC(50) = 189 μm. We used whole-cell and nucleated patch recordings to investigate the mechanisms of FFA modulation of TTX-sensitive voltage-gated sodium current. Our data show that flufenamic acid slows down the inactivation process of the sodium current, while shifting the inactivation curve ~10 mV toward more hyperpolarized potentials. The recovery from inactivation is also affected in a voltage-dependent way, resulting in slower recovery at hyperpolarized potentials. Recordings from acute slices demonstrate that FFA reduces repetitive- and abolishes burst-firing in CA1 pyramidal neurons. A computational model based on our data was employed to better understand the mechanisms of FFA action. Simulation data support the idea that FFA acts via a novel mechanism by reducing the voltage dependence of the sodium channel fast inactivation rates. These effects of FFA suggest that it may be an effective anti-epileptic drug.

  15. Statistics of voltage drop in distribution circuits: a dynamic programming approach

    Energy Technology Data Exchange (ETDEWEB)

    Turitsyn, Konstantin S [Los Alamos National Laboratory

    2010-01-01

    We analyze a power distribution line with high penetration of distributed generation and strong variations of power consumption and generation levels. In the presence of uncertainty the statistical description of the system is required to assess the risks of power outages. In order to find the probability of exceeding the constraints for voltage levels we introduce the probability distribution of maximal voltage drop and propose an algorithm for finding this distribution. The algorithm is based on the assumption of random but statistically independent distribution of loads on buses. Linear complexity in the number of buses is achieved through the dynamic programming technique. We illustrate the performance of the algorithm by analyzing a simple 4-bus system with high variations of load levels.

  16. Transparent Pixel Circuit with Threshold Voltage Compensation Using ZnO Thin-Film Transistors for Active-Matrix Organic Light Emitting Diode Displays

    Science.gov (United States)

    Yang, Ik-Seok; Kwon, Oh-Kyong

    2009-03-01

    A transparent pixel circuit with a threshold voltage compensating scheme using ZnO thin-film transistors (TFTs) for active-matrix organic light emitting diode (AMOLED) displays is proposed. This circuit consists of five n-type ZnO TFTs and two capacitors and can compensate for the threshold voltage variation of ZnO TFTs in real time. From simulation results, the maximum deviation of the emission current of the pixel circuit with a threshold voltage variation of ±1 V is determined to be less than 10 nA. From measurement results, it is verified that the maximum deviation of measured emission currents with measurement position in a glass substrate is less than 15 nA in a higher current range, and the deviation of emission current with time is less than 3%.

  17. Note: Wide-range and high-resolution on-chip delay measurement circuit with low supply-voltage sensitivity for SoC applications

    Science.gov (United States)

    Sheng, Duo; Hung, Yu-Chan

    2016-11-01

    This paper presents an on-chip delay measurement (OCDM) circuit with a wide delay-measurement range, a high delay-measurement resolution and low supply-voltage sensitivity for efficient detection, and diagnosis in the high-performance system-on-chip (SoC). The proposed cascade-stage measurement structure can simultaneously achieve a delay-measurement range of several nanoseconds and a quantization resolution of several picoseconds. The proposed delay-measurement circuit has a high immunity to supply voltage variations without any additional calibration or self-biasing circuit. The delay-measurement range is 5.25 ns with 6 ps resolution; and the average delay resolution variation is 0.41% with ±10% supply voltage variations.

  18. Study of DC Circuit Breaker of H2-N2 Mixture Gas for High Voltage

    Science.gov (United States)

    Shiba, Yuji; Morishita, Yukinaga; Kaneko, Shuhei; Okabe, Shigemitsu; Mizoguchi, Hitoshi; Yanabu, Satoru

    Global warming caused by CO2 etc. is a field where the concern is very high. Especially, automobile emissions are problem for it. Therefore, the hybrid car is widely development and used recently. Hybrid car used electric power and gasoline. So, the car reduces CO2. Hybrid car has engine and motor. To rotate the motor, hybrid car has battery. This battery is large capacity. Therefore, the relay should interrupt high DC current for the switch of the motor and the engine. So, hybrid car used hydrogen gas filling relay We studied interruption test for the research of a basic characteristic of hydrogen gas. DC current has not current zero point. So, it is necessary to make the current zero by high arc voltage and forcible current zero point. The loss coefficient and arc voltage of hydrogen is high. Therefore, we studied interruption test for used high arc voltage. We studied interruption test and dielectric breakdown test of air, pure Hydrogen, and Hydrogen- nitrogen mixture gas. As a result, we realized H2-N2(80%-20%) is the best gas.

  19. High-speed operation of optical exclusive OR circuit based on balanced detection and intensity modulation

    Directory of Open Access Journals (Sweden)

    Koichi Takiguchi

    2015-12-01

    Full Text Available We report the evaluated results of an optical exclusive OR (XOR circuit for high-speed binary signals, which operates based on balanced detection and intensity modulation. This circuit partly adopts simple electronics in order to achieve simple configuration and operation. Two input optical binary signals into a balanced photo detector produce an electrical signal for directly driving a modulator. The modulator modulates the lightwave from a laser diode and generates optical XOR output of the two input optical signals. After briefly explaining its configuration and operating principle, We demonstrate some experimental results to show its potential. We show its successful operation at 40 Gbit/s binary signals including bit error rate measurement.

  20. Design of an improved RCD buffer circuit for full bridge circuit

    Science.gov (United States)

    Yang, Wenyan; Wei, Xueye; Du, Yongbo; Hu, Liang; Zhang, Liwei; Zhang, Ou

    2017-05-01

    In the full bridge inverter circuit, when the switch tube suddenly opened or closed, the inductor current changes rapidly. Due to the existence of parasitic inductance of the main circuit. Therefore, the surge voltage between drain and source of the switch tube can be generated, which will have an impact on the switch and the output voltage. In order to ab sorb the surge voltage. An improve RCD buffer circuit is proposed in the paper. The peak energy will be absorbed through the buffer capacitor of the circuit. The part energy feedback to the power supply, another part release through the resistor in the form of heat, and the circuit can absorb the voltage spikes. This paper analyzes the process of the improved RCD snubber circuit, According to the specific parameters of the main circuit, a reasonable formula for calculating the resistance capacitance is given. A simulation model will be modulated in Multisim, which compared the waveform of tube voltage and the output waveform of the circuit without snubber circuit with the improved RCD snubber circuit. By comparing and analyzing, it is proved that the improved buffer circuit can absorb surge voltage. Finally, experiments are demonstrated to validate that the correctness of the RC formula and the improved RCD snubber circuit.

  1. Circuits and systems based on delta modulation linear, nonlinear and mixed mode processing

    CERN Document Server

    Zrilic, Djuro G

    2005-01-01

    This book is intended for students and professionals who are interested in the field of digital signal processing of delta-sigma modulated sequences. The overall focus is on the development of algorithms and circuits for linear, non-linear, and mixed mode processing of delta-sigma modulated pulse streams. The material presented here is directly relevant to applications in digital communication, DSP, instrumentation, and control.

  2. Enhanced Open-Circuit Voltage in Visible Quantum Dot Photovoltaics by Engineering of Carrier-Collecting Electrodes

    KAUST Repository

    Wang, Xihua

    2011-10-26

    Colloidal quantum dots (CQDs) enable multijunction solar cells using a single material programmed using the quantum size effect. Here we report the systematic engineering of 1.6 eV PbS CQD solar cells, optimal as the front cell responsible for visible-wavelength harvesting in tandem photovoltaics. We rationally optimize each of the device\\'s collecting electrodes-the heterointerface with electron-accepting TiO2 and the deep-work-function hole-collecting MoO3 for ohmic contact-for maximum efficiency. We report an open-circuit voltage of 0.70 V, the highest observed in a colloidal quantum dot solar cell operating at room temperature. We report an AM1.5 solar power conversion efficiency of 3.5%, the highest observed in >1.5 eV bandgap CQD PV device. © 2011 American Chemical Society.

  3. Three-dimensional modelling of electric-arc development in a low-voltage circuit-breaker

    Energy Technology Data Exchange (ETDEWEB)

    Piqueras, L.; Henry, D.; Jeandel, D.; Scott, J. [Laboratoire de Mecanique des Fluides et d' Acoustique, CNRS/Universite de Lyon, Ecole Centrale de Lyon/Universite Lyon 1/INSA de Lyon, ECL, 36 avenue Guy de Collongue, 69134 Ecully Cedex (France); Wild, J. [Schneider Electric, 37 quai Merlin, 38050 Grenoble Cedex 9 (France)

    2008-09-15

    This article describes direct numerical simulation of the first three milliseconds following ignition of the arc in a low-voltage circuit-breaker using a computational-fluid-dynamics code adapted for electric-arc modelling. The mobile electrode is allowed for by a moving mesh. The results describe the evolution of the arc with time in terms of its detailed electrical, thermal and fluid dynamic properties. They allow the identification of several phases during the overall arc development process studied here: arc initialisation in the widening electrode gap, arc-thermal expansion, displacement of the arc towards the tip of the mobile electrode, and the beginning of commutation to the fixed electrode. (author)

  4. The Cu{sub 2}ZnSnS{sub 4} solar cell with high open circuit voltage

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Min; Ma, Xun; Jiang, Zhi; Li, Zhishan; Liu, Sijia; Lu, Yilei; Wang, Shurong, E-mail: shrw88@aliyun.com

    2017-03-15

    In this paper, the effects of two different sulfurization processes on the CZTS films were investigated, and the results indicated that a rapid high-temperature crystallization process after sulfurization was beneficial for CZTS thin films to obtain a compact and flat surface with large grains. However, a common sulfurization without rapid high-temperature crystallization process would easily lead to undesirable properties of films, such as rough surface with pin holes, which degenerate the performance of devices. Cu{sub 2}ZnSnS{sub 4} (CZTS) solar cell based on a rapid high-temperature process after sulfurization achieved a high open circuit voltage of 722 mV and the best efficiency 3.32% was obtained.

  5. Numerical Analysis of the Arc Plasma in a Simplified Low-voltage Circuit Breaker Chamber with Ferromagnetic Materials

    Institute of Scientific and Technical Information of China (English)

    Wu Yi; Rong Mingzhe; Yang Qian; Hu Guangxia

    2005-01-01

    This paper is devoted to the simulation of the arc plasma in a simplified low-voltage circuit breaker chamber. Based on a group of coupled governing equations, a three-dimensional (3-D) arc plasma model is built and solved by a modified commercial code. Firstly, this paper presents a solution of the stationary state of the arc plasma and discusses the distribution of some parameters throughout the chamber. Secondly, with the ferromagnetic materials included,the balance of the stationary state is broken and a transient course is calculated. In light of the simulation results, the temperature distribution sequence, the arc motion and the plasma jet are then described and analyzed in detail.

  6. Characteristics of Overvoltage Protection with Cascade Application of Surge Protective Devices in Low-Voltage AC Power Circuits

    Directory of Open Access Journals (Sweden)

    RADULOVIC, V.

    2015-08-01

    Full Text Available Surge Protective Devices (SPDs are widely used for protection of the equipment in low-voltage AC power circuits against wide variety of surges. Cascade application of SPDs starting at the service entrance of a building and downstream toward near sensitive equipment is intended to ensure optimal energy distribution among installed SPDs, as well as proper equipment protection against surges. Characteristics of overvoltage protection with two-stage application of SPDs have been analyzed in the paper through performed measurements, followed by simulations and numerical modeling using the ATP/EMTP and MATLAB Simulink. Parametric analysis of the protection's characteristics in wide range of influencing factors has been performed in order to define a set of applicable solutions for proper selection and performance of SPDs.

  7. A Novel Thiophene Derivative-based Conjugated Polymer for Polymer Solar Cells with High Open-circuit Voltage

    Institute of Scientific and Technical Information of China (English)

    谌烈; 沈星星; 陈义旺

    2012-01-01

    A novel D-A alternative conjugated polymer PBDTDMCT containing benzo[1,2-b:4,5-b']dithiophene (BDT) and dimethyl thiophene-3,4-dicarboxylate (DMCT), was designed and synthesized by Stille cross-coupling reaction. The copolymer exhibited excellent solubility and good thermal stability. The optical band gap determined from the onset of absorption of the polymer film was 2.10 eV. By incorporation of the ester groups into the polymer side chain, the HOMO level of polymer PBDTDMT was tuned to be deep-lying (--5.65 eV). Open-circuit voltage of polymer solar cells constructed based on PBDTDMT and [6,6]-phenyl-CTwbutyric acid methyl ester (PCTIBM) can be tuned to achieve values as high as ca. 1.0 V.

  8. Current regulators for I/SUP 2/L circuits to be operated from low-voltage power supplies

    DEFF Research Database (Denmark)

    Bruun, Erik; Hansen, Ole

    1980-01-01

    A new bandgap current reference is described which can be used to control the injector current of I/SUP 2/L circuits for supply voltages down to about 1 V. For small currents the total injector current is obtained as a mirror of the reference current. For large injector currents the current control...... is performed by a series regulator which compares the injector current of one I/SUP 2/L gate to the reference current. The described reference current can be adjusted to give a variation with temperature of about 60 ppm/°C over the temperature range -10 to +70°C. However, in some applications a nonzero......, but well controlled temperature coefficient is desired. It is shown how a temperature stable ring oscillator with I/SUP 2/L gates can be constructed by tailoring the temperature dependence of the supply current appropriately....

  9. Simulation of current-voltage curves for inverted planar structure perovskite solar cells using equivalent circuit model with inductance

    Science.gov (United States)

    Cojocaru, Ludmila; Uchida, Satoshi; Jayaweera, Piyankarage V. V.; Kaneko, Shoji; Toyoshima, Yasutake; Nakazaki, Jotaro; Kubo, Takaya; Segawa, Hiroshi

    2017-02-01

    Physical modeling of hysteretic behavior in current-voltage (I-V) curves of perovskite solar cells (PSCs) is necessary for further improving their power conversion efficiencies (PCEs). The reduction of hysteresis in inverted planar structure PSCs (p-PSCs) has been achieved by using a [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) layer. In the cases, the opposite trend of the I-V hysteresis has been observed where the forward scan shows slightly higher efficiency than the reverse scan. In this paper, an equivalent circuit model with inductance is proposed. This model consists of a Schottky diode involving a parasitic inductance focusing PCBM/Al(Ca) interface and accurately represents the opposite trend of the I-V hysteresis of the p-PSC with an inverted structure.

  10. Membrane voltage modulates the GABA(A) receptor gating in cultured rat hippocampal neurons.

    Science.gov (United States)

    Pytel, Maria; Mercik, Katarzyna; Mozrzymas, Jerzy W

    2006-02-01

    The kinetics of GABAergic currents in neurons is known to be modulated by the membrane voltage but the underlying mechanisms have not been fully explored. In particular, the impact of membrane potential on the GABA(A) receptor gating has not been elucidated. In the present study, the effect of membrane voltage on current responses elicited by ultrafast GABA applications was studied in cultured hippocampal neurons. The current to voltage relationship (I-V) for responses to saturating [GABA] (10 mM) showed an inward rectification (slope conductance at positive voltages was 0.62 +/- 0.05 of that at negative potentials). On the contrary, I-V for currents evoked by low [GABA] (1 microM) showed an outward rectification. The onset of currents elicited by saturating [GABA] was significantly accelerated at positive potentials. Analysis of currents evoked by prolonged applications of saturating [GABA] revealed that positive voltages significantly increased the rate and extent of desensitization. The onsets of current responses to non-saturating [GABA] were significantly accelerated at positive voltages indicating an enhancement of the binding rate. However, at low [GABA] at which the onset rate is expected to approach an asymptote set by opening/closing and unbinding rates, no significant modification of current onset by voltage was observed. Quantitative analysis based on model simulations indicated that the major effect of membrane depolarization was to increase the rates of binding, desensitization and of opening as well as to slightly reduce the rate of exit from desensitization. In conclusion, we provide evidence that membrane voltage affects the GABA(A) receptor microscopic gating.

  11. 一种间接测量电压互感器二次回路电压降的方法%A Method for Indirectly Measuring Voltage Transformer Secondary Circuit Voltage Drop

    Institute of Scientific and Technical Information of China (English)

    李固; 李纯坚; 傅子明; 刘芬; 梁旭常; 严杰峰

    2014-01-01

    通过研究电压互感器(voltage transformer,VT)二次回路电压降的主要来源,分析 VT二次回路阻抗的构成和运行特性,发现接触电阻是导致 VT二次回路电压降变化的主要原因。当计量电压二次回路阻抗为确定值时,VT二次负荷和 VT二次回路压降存在着对应的关系,可以通过测量二次负荷值来了解二次回路阻抗值,进而推算 VT二次回路压降值。基于此,推导出了用 VT二次负荷计算出 VT二次回路电压降的公式,并提出了通过分析对比 VT二次回路负荷变化大小及趋势,来对 VT二次回路压降开展技术监督的工作方法。%By means of studying main source of voltage drop of voltage transformer secondary circuit,this paper analyzes constitution and running characteristic of VT secondary circuit and discovers the main reason is contact resistance. When im-pedance of metering voltage secondary circuit was a determined value,there was corresponding relationship between VT sec-ondary load and voltage drop and it was able to learn impedance value of the secondary circuit by measuring secondary load value and calculate voltage drop value of VT secondary circuit. A calculation formula for voltage drop value of VT secondary circuit was deduced by VT secondary load and a working method for developing technical supervision on voltage drop of VT secondary circuit was proposed by analyzing and comparing changes and trends of VT secondary load.

  12. Microstructural and Electronic Origins of Open-Circuit Voltage Tuning in Organic Solar Cells Based on Ternary Blends

    KAUST Repository

    Mollinger, Sonya A.

    2015-09-22

    © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Organic ternary heterojunction photovoltaic blends are sometimes observed to undergo a gradual evolution in open-circuit voltage (Voc) with increasing amounts of a second donor or an acceptor. The Voc is strongly correlated with the energy of the charge transfer state in the blend, but this value depends on both local and mesoscopic orders. In this work, the behavior of Voc in the presence of a wide range of interfacial electronic states is investigated. The key charge transfer state interfaces responsible for Voc in several model systems with varying morphology are identified. Systems consisting of one donor with two fullerene molecules and of one acceptor with a donor polymer of varying regio-regularity are used. The effects from the changing energetic disorder in the material and from the variation due to a law of simple mixtures are quantified. It has been found that populating the higher-energy charge transfer states is not responsible for the observed change in Voc upon the addition of a third component. Aggregating polymers and miscible fullerenes are compared, and it has been concluded that in both cases charge delocalization, aggregation, and local polarization effects shift the lowest-energy charge transfer state distribution. The open-circuit voltage evolution and charge transfer state interfaces in ternary organic photovoltaic blends are investigated using several model systems. The changes in subgap spectra from energetic disorder and increased population of higher energy states are analyzed and the lowest charge transfer state distribution is observed to shift due to local aggregation and delocalization effects.

  13. Non-Destructive Investigation on Short Circuit Capability of Wind-Turbine-Scale IGBT Power Modules

    DEFF Research Database (Denmark)

    Wu, Rui; Iannuzzo, Francesco; Wang, Huai

    2014-01-01

    This paper presents a comprehensive investigation on the short circuit capability of wind-turbine-scale IGBT power modules by means of a 6 kA/1.1 kV non-destructive testing system. A Field Programmable Gate Array (FPGA) supervising unit is adpoted to achieve an accurate time control for short...

  14. Short-Circuit Robustness Assessment in Power Electronic Modules for Megawatt Applications

    DEFF Research Database (Denmark)

    Iannuzzo, Francesco

    2016-01-01

    In this paper, threats and opportunities in testing of megawatt power electronic modules under short circuit are presented and discussed, together with the introduction of some basic principles of non-destructive testing, a key technique to allow post-failure analysis. The non-destructive testing...

  15. Ciguatoxins: Cyclic Polyether Modulators of Voltage-gated Iion Channel Function

    Directory of Open Access Journals (Sweden)

    Richard J. Lewis

    2006-04-01

    Full Text Available Ciguatoxins are cyclic polyether toxins, derived from marine dinoflagellates, which are responsible for the symptoms of ciguatera poisoning. Ingestion of tropical and subtropical fin fish contaminated by ciguatoxins results in an illness characterised by neurological, cardiovascular and gastrointestinal disorders. The pharmacology of ciguatoxins is characterised by their ability to cause persistent activation of voltage-gated sodium channels, to increase neuronal excitability and neurotransmitter release, to impair synaptic vesicle recycling, and to cause cell swelling. It is these effects, in combination with an action to block voltage-gated potassium channels at high doses, which are believed to underlie the complex of symptoms associated with ciguatera. This review examines the sources, structures and pharmacology of ciguatoxins. In particular, attention is placed on their cellular modes of actions to modulate voltage-gated ion channels and other Na+-dependent mechanisms in numerous cell types and to current approaches for detection and treatment of ciguatera.

  16. Non-linear Membrane Properties in Entorhinal Cortical Stellate Cells Reduce Modulation of Input-Output Responses by Voltage Fluctuations.

    Science.gov (United States)

    Fernandez, Fernando R; Malerba, Paola; White, John A

    2015-04-01

    The presence of voltage fluctuations arising from synaptic activity is a critical component in models of gain control, neuronal output gating, and spike rate coding. The degree to which individual neuronal input-output functions are modulated by voltage fluctuations, however, is not well established across different cortical areas. Additionally, the extent and mechanisms of input-output modulation through fluctuations have been explored largely in simplified models of spike generation, and with limited consideration for the role of non-linear and voltage-dependent membrane properties. To address these issues, we studied fluctuation-based modulation of input-output responses in medial entorhinal cortical (MEC) stellate cells of rats, which express strong sub-threshold non-linear membrane properties. Using in vitro recordings, dynamic clamp and modeling, we show that the modulation of input-output responses by random voltage fluctuations in stellate cells is significantly limited. In stellate cells, a voltage-dependent increase in membrane resistance at sub-threshold voltages mediated by Na+ conductance activation limits the ability of fluctuations to elicit spikes. Similarly, in exponential leaky integrate-and-fire models using a shallow voltage-dependence for the exponential term that matches stellate cell membrane properties, a low degree of fluctuation-based modulation of input-output responses can be attained. These results demonstrate that fluctuation-based modulation of input-output responses is not a universal feature of neurons and can be significantly limited by subthreshold voltage-gated conductances.

  17. Simulation of the Arc Behavior in Puffer-type High Voltage Circuit Breaker Considering the Influence of Nozzle Ablation

    Institute of Scientific and Technical Information of China (English)

    JIANG Xu; ZHONG Jianying; ZHANG Youpeng; ZHANG Gaochao; LI Xingwen; JIA Shenli

    2013-01-01

    In order to investigate the influence of nozzle ablation to arc,a 2 D axisymmetric magneto-hydro-dynamics arc model is developed to simulate the arc behavior during the whole interruption process in a puffer type high voltage circuit breaker,considering the nozzle ablating and the mixing process of Polytetrafluoroethylene(PTFE) vapor with SF6.The results show that the arc radius firstly increases and then decreases as arc current varies according to its sinusoida waveform.At 3.5 ms after arc initiation the nozzle ablation starts,and 2.5 ms later the current nearly reaches its peak value and nozzle ablation develops intensely.Meanwhile the nozzle is blocked by arc at this time and consequently the vapor concentration in nozzle reaches the highest.Then while the current decreasing and open distance increaseing the vapor concentration gradually decreases.Before current zero the extinction peak of arc voltage occurs.It indicates that the PTFE vapor enhances pressure rise in arc quenching chamber and strengthens the arc blocking effect on nozzle; the arc radius is wider and arc temperature is lower when nozzle ablation is considered.

  18. Technical-economic evaluation of the utilization of closing resistor in CEMIG extra-high voltage circuit breakers

    Energy Technology Data Exchange (ETDEWEB)

    Rocha, Angelica C.O.; Pinto, Roberto del Giudice R.; Teixeira, Jose Cleber; Fonseca, Rodrigo Assuncao; F. Junior, Sebastiao V. [Companhia Energetica de Minas Gerais (CEMIG), Belo Horizonte, MG (Brazil)

    1994-12-31

    This paper presents the technical and economic studies performed by CEMIG, Companhia Energetica de Minas Gerais, Brazil, concerning the use of closing resistor in its extra-high voltage (EHV) breakers. The analysis emphasizes the advantages which could be achieved with the elimination of the resistor as far as costs and reliability are concerned. This evaluation was motivated by two 500 kV breaker failures resulting from the breakdown of the closing resistor operation mechanism. These occurrences resulted in operative restriction for CEMIG EHV system. The analysis demanded a review of the capability criteria of silicon carbide (Si C) gap arresters, which are still greatly used in CEMIG EHV System, and of the procedures to be applied when carrying out the transient studies. The investigation resulted in the prompt removal of closing resistors from circuit breakers in CEMIG extra-high voltage system generating an economy of approximately U$ 840,00 and an improvement in safety and system reliability. (author) 13 refs., 4 figs., 1 tab.

  19. Recombination in polymer:Fullerene solar cells with open-circuit voltages approaching and exceeding 1.0 V

    KAUST Repository

    Hoke, Eric T.

    2012-09-14

    Polymer:fullerene solar cells are demonstrated with power conversion efficiencies over 7% with blends of PBDTTPD and PC 61 BM. These devices achieve open-circuit voltages ( V oc ) of 0.945 V and internal quantum efficiencies of 88%, making them an ideal candidate for the large bandgap junction in tandem solar cells. V oc \\'s above 1.0 V are obtained when the polymer is blended with multiadduct fullerenes; however, the photocurrent and fill factor are greatly reduced. In PBDTTPD blends with multiadduct fullerene ICBA, fullerene emission is observed in the photoluminescence and electroluminescence spectra, indicating that excitons are recombining on ICBA. Voltage-dependent, steady state and time-resolved photoluminescence measurements indicate that energy transfer occurs from PBDTTPD to ICBA and that back hole transfer from ICBA to PBDTTPD is inefficient. By analyzing the absorption and emission spectra from fullerene and charge transfer excitons, we estimate a driving free energy of -0.14 ± 0.06 eV is required for efficient hole transfer. These results suggest that the driving force for hole transfer may be too small for efficient current generation in polymer:fullerene solar cells with V oc values above 1.0 V and that non-fullerene acceptor materials with large optical gaps ( > 1.7 eV) may be required to achieve both near unity internal quantum efficiencies and values of V oc exceeding 1.0 V. © 2013 WILEY-VCH Verlag GmbH and Co.

  20. A Novel 800mV Reference Current Source Circuit for Low-Power Low-Voltage Mixed-Mode Systems

    Science.gov (United States)

    Kwon, Oh Jun; Kwack, Kae Dal

    In this paper, a novel 800mV beta-multiplier reference current source circuit is presented. In order to cope with the narrow input common-mode range of the Opamp in the reference circuit, the resistive voltage divider was employed. High gain Opamp was designed to compensate for the intrinsic low output resistance of the MOS transistors. The proposed reference circuit was designed in a standard 0.18µm CMOS process with nominal Vth of 420mV and -450mV for n-MOS and p-MOS transistor, respectively. The total power consumption including Opamp is less than 50µW.

  1. Topological phase transition in hexagonal boron-nitride bilayers modulated by gate voltage

    Science.gov (United States)

    Jin, Guojun; Zhai, Xuechao

    2013-03-01

    We study the gate-voltage modulated electronic properties of hexagonal boron-nitride bilayers with two different stacking structures in the presence of intrinsic and Rashba spin-orbit interactions. Our analytical results show that there are striking cooperation effects arising from the spin-orbit interactions and the interlayer bias voltage. For realizing topological phase transition, in contrast to a gated graphene bilayer for increasing its energy gap, the energy gap of a boron-nitride bilayer is significantly reduced by an applied gate voltage. For the AA stacking-bilayer which has the inversion symmetry, a strong topological phase is found, and there is an interesting reentrant behavior from a normal phase to a topological phase and then to a normal phase again, characterized by the topological index. Therefore, the gate voltage modulated AA-boron nitride bilayer can be taken as a newcomer of the topological insulator family. For the AB stacking-bilayer which is lack of the inversion symmetry, it is always topologically trivial, but exhibits an unusual quantum Hall phase with four degenerate low-energy states localized at a single edge. It is suggested that these theoretical findings could be verified experimentally in the transport properties of boron-nitride bylayers. This research was supported by the NSFC (Nos. 60876065, 11074108), PAPD, and NBRPC (Nos. 2009CB929504, 2011CB922102).

  2. New Breakdown Electric Field Calculation for SF6 High Voltage Circuit Breaker Applications

    Institute of Scientific and Technical Information of China (English)

    Ph.ROBIN-JOUAN; M.YOUSFI

    2007-01-01

    The critical electric fields of hot SF6 are calculated including both electron and ion kinetics in wide ranges of temperature and pressure,namely from 300 K up to 4000 K and 2 atmospheres up to 32 atmospheres respectively.Based on solving a multi-term electron Boltzmann equation the calculations use improved electron-gas collision cross sections for twelve SF6 dissociation products with a particular emphasis on the electron-vibrating molecule interactions.The ion kinetics is also considered and its role on the critical field becomes non negligible as the temperature is above 2000 K.These critical fields are then used in hydrodynamics simulations which correctly predict the circuit breaker behaviours observed in the case of breaking tests.

  3. Pulsewidth modulated DC-to-DC power conversion circuits, dynamics, and control designs

    CERN Document Server

    Choi, Byungcho

    2013-01-01

    This is the definitive reference for anyone involved in pulsewidth modulated DC-to-DC power conversion Pulsewidth Modulated DC-to-DC Power Conversion: Circuits, Dynamics, and Control Designs provides engineers, researchers, and students in the power electronics field with comprehensive and complete guidance to understanding pulsewidth modulated (PWM) DC-to-DC power converters. Presented in three parts, the book addresses the circuitry and operation of PWM DC-to-DC converters and their dynamic characteristics, along with in-depth discussions of control design of PWM DC-to

  4. Electro-thermal modeling of high power IGBT module short-circuits with experimental validation

    DEFF Research Database (Denmark)

    Wu, Rui; Iannuzzo, Francesco; Wang, Huai

    2015-01-01

    A novel Insulated Gate Bipolar Transistor (IGBT) electro-thermal modeling approach involving PSpice and ANSYS/Icepak with both high accuracy and simulation speed has been presented to study short-circuit of a 1.7 kV/1 kA commercial IGBT module. The approach successfully predicts the current...... and temperature distribution inside the chip of power IGBT modules. The simulation result is further validated using a 6 kA/1.1 kV non-destructive tester. The experimental validation demonstrates the modeling approach’s capability for reliable design of high power IGBT power modules given electrical...

  5. Energy from CO2 using capacitive electrodes--theoretical outline and calculation of open circuit voltage.

    Science.gov (United States)

    Paz-Garcia, J M; Schaetzle, O; Biesheuvel, P M; Hamelers, H V M

    2014-03-15

    Recently, a new technology has been proposed for the utilization of energy from CO2 emissions (Hamelers et al., 2014). The principle consists of controlling the dilution process of CO2-concentrated gas (e.g., exhaust gas) into CO2-dilute gas (e.g., air) thereby extracting a fraction of the released mixing energy. In this paper, we describe the theoretical fundamentals of this technology when using a pair of charge-selective capacitive electrodes. We focus on the behavior of the chemical system consisting of CO2 gas dissolved in water or monoethanolamine solution. The maximum voltage given for the capacitive cell is theoretically calculated, based on the membrane potential. The different aspects that affect this theoretical maximum value are discussed.

  6. Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat

    Energy Technology Data Exchange (ETDEWEB)

    Hacke, P.; Kempe, M.; Terwilliger, K.; Glick, S.; Call, N.; Johnston, S.; Kurtz, S.

    2011-07-01

    As it is considered economically favorable to serially connect modules to build arrays with high system voltage, it is necessary to explore potential long-term degradation mechanisms the modules may incur under such electrical potential. We performed accelerated lifetime testing of multicrystalline silicon PV modules in 85 degrees C/ 85% relative humidity and 45 degrees C/ 30% relative humidity while placing the active layer in either positive or negative 600 V bias with respect to the grounded module frame. Negative bias applied to the active layer in some cases leads to more rapid and catastrophic module power degradation. This is associated with significant shunting of individual cells as indicated by electroluminescence, thermal imaging, and I-V curves. Mass spectroscopy results support ion migration as one of the causes. Electrolytic corrosion is seen occurring with the silicon nitride antireflective coating and silver gridlines, and there is ionic transport of metallization at the encapsulant interface observed with damp heat and applied bias. Leakage current and module degradation is found to be highly dependent upon the module construction, with factors such as encapsulant and front glass resistivity affecting performance. Measured leakage currents range from about the same seen in published reports of modules deployed in Florida (USA) and is accelerated to up to 100 times higher in the environmental chamber testing.

  7. Modulation of anxiety and fear via distinct intrahippocampal circuits.

    Science.gov (United States)

    Engin, Elif; Smith, Kiersten S; Gao, Yudong; Nagy, David; Foster, Rachel A; Tsvetkov, Evgeny; Keist, Ruth; Crestani, Florence; Fritschy, Jean-Marc; Bolshakov, Vadim Y; Hajos, Mihaly; Heldt, Scott A; Rudolph, Uwe

    2016-03-14

    Recent findings indicate a high level of specialization at the level of microcircuits and cell populations within brain structures with regards to the control of fear and anxiety. The hippocampus, however, has been treated as a unitary structure in anxiety and fear research despite mounting evidence that different hippocampal subregions have specialized roles in other cognitive domains. Using novel cell-type- and region-specific conditional knockouts of the GABAA receptor α2 subunit, we demonstrate that inhibition of the principal neurons of the dentate gyrus or CA3 via α2-containing GABAA receptors (α2GABAARs) is required to suppress anxiety, while the inhibition of CA1 pyramidal neurons is required to suppress fear responses. We further show that the diazepam-modulation of hippocampal theta activity shows certain parallels with our behavioral findings, suggesting a possible mechanism for the observed behavioral effects. Thus, our findings demonstrate a double dissociation in the regulation of anxiety versus fear by hippocampal microcircuitry.

  8. Improvement and test of high power amplifier high voltage interlock circuit%高功放高压联锁电路改进与测试

    Institute of Scientific and Technical Information of China (English)

    金华松; 邱冬冬; 刘斯亮

    2012-01-01

    Whether the device can work regularly was determined by the performance of high voltage interlock directly. Through the operating principle analysis of high voltage interlock circuit and AC time delayer of high power amplifier based on CPI mechanical cabinet, an improved high voltage interlock circuit solution and a test method applied in AC time delayer are studied. The improved interlock circuit overcomes the drawbacks of original high voltage interlock solution. The designed test circuit can carry out quantitative test of AC time delayer parameters.%高压联锁性能的好坏直接影响设备能否正常工作.通过分析CPI高功放(HPA)的延时加高压程序、高压联锁电路和交流延时器工作原理,研究出一种新改选的高压联锁电路方案和用于交流延时器的测试方法.分析阐述表明,该方案和测试方法克服了CPI高功放的高压联锁方案的弊端.另外,根据分析结果设计了延时测试电路,它可对交流延时器性能参数进行定量测试.

  9. Formation of a p-n heterojunction on GaP photocathodes for H-2 production providing an open-circuit voltage of 710 mV

    DEFF Research Database (Denmark)

    Malizia, Mauro; Seger, Brian; Chorkendorff, Ib

    2014-01-01

    Photocatalytic water splitting for the sustainable production of hydrogen using a two-photon tandem device requires careful optimization of the semiconductors used as photon absorbers. In this work we show how the open-circuit voltage of photocathodes for the hydrogen evolution reaction based on ...

  10. Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application

    NARCIS (Netherlands)

    Tripathi, A.K.; Smits, E.C.P.; Putten, J.B.P.H. van der; Neer, M. van; Myny, K.; Nag, M.; Steudel, S.; Vicca, P.; O'Neill, K.; Veenendaal, E. van; Genoe, G.; Heremans, P.; Gelinck, G.H.

    2011-01-01

    In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 µm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The

  11. Priming Neural Circuits to Modulate Spinal Reflex Excitability

    Science.gov (United States)

    Estes, Stephen P.; Iddings, Jennifer A.; Field-Fote, Edelle C.

    2017-01-01

    While priming is most often thought of as a strategy for modulating neural excitability to facilitate voluntary motor control, priming stimulation can also be utilized to target spinal reflex excitability. In this application, priming can be used to modulate the involuntary motor output that often follows central nervous system injury. Individuals with spinal cord injury (SCI) often experience spasticity, for which antispasmodic medications are the most common treatment. Physical therapeutic/electroceutic interventions offer an alternative treatment for spasticity, without the deleterious side effects that can accompany pharmacological interventions. While studies of physical therapeutic/electroceutic interventions have been published, a systematic comparison of these approaches has not been performed. The purpose of this study was to compare four non-pharmacological interventions to a sham-control intervention to assess their efficacy for spasticity reduction. Participants were individuals (n = 10) with chronic SCI (≥1 year) who exhibited stretch-induced quadriceps spasticity. Spasticity was quantified using the pendulum test before and at two time points after (immediate, 45 min delayed) each of four different physical therapeutic/electroceutic interventions, plus a sham-control intervention. Interventions included stretching, cyclic passive movement (CPM), transcutaneous spinal cord stimulation (tcSCS), and transcranial direct current stimulation (tDCS). The sham-control intervention consisted of a brief ramp-up and ramp-down of knee and ankle stimulation while reclined with legs extended. The order of interventions was randomized, and each was tested on a separate day with at least 48 h between sessions. Compared to the sham-control intervention, stretching, CPM, and tcSCS were associated with a significantly greater reduction in spasticity immediately after treatment. While the immediate effect was largest for stretching, the reduction persisted

  12. 低压断路器的选型与应用%Selection and Application of Low-Voltage Circuit Breaker

    Institute of Scientific and Technical Information of China (English)

    钱金川; 贾文军

    2011-01-01

    介绍了低压断路器在配电线路、家用及类似场所负载、电动机负载的选型方法,并分析了在断路器保护功能以及不同负载特性情况下的选型策略。通过对低压断路器的合理选型,使低压断路器达到最佳的保护状态,并避免了因断路器选型不当及安装不合理而造成的安全隐患。%Introduction was made to a low-voltage circuit breaker type selection method in distribution line, household use, similar sites load and motor loads. Analysis was made to type selection strategy under circuit breaker protection function and different load characteristics conditions. Reasonable type selection of low-voltage circuit breakers enables low-voltage circuit breakers to reach optimal protection status, so as to avoid safety dangers caused by unsuitable circuit breaker type selection and unreasonable installation.

  13. Analysis and simulation of the three-phase AC voltage regulation circuit%三相交流调压电路的分析与仿真

    Institute of Scientific and Technical Information of China (English)

    李衍孜

    2012-01-01

    Based on the analysis of the operation principle and mode of the single-phase AC voltage-regulation circuit, the voltage-regulating rule and effect of three-phase AC voltage-regulation was studied deeply in the paper. The theory of the three-phase star-style AC voltage-regulation circuit was tested in matlab/simulink, the simulation result proved the analysis of the theory of the three-phase AC voltage-regulation circuit was correct.%在分析单相交流调压电路运行原理和工作方式的基础上,深入研究了三相交流调压电路的调压规律和调压效果,并在Matlab/simulink仿真平台上对三相星形无中线交流调压电路的理论部分进行了验证,结果表明:三相交流调压电路的分析是正确的.

  14. High Performance of Space Vector Modulation Direct Torque Control SVM-DTC Based on Amplitude Voltage and Stator Flux Angle

    Directory of Open Access Journals (Sweden)

    Hassan Farhan Rashag

    2013-04-01

    Full Text Available Various aspects related to controlling induction motor are investigated. Direct torque control is an original high performance control strategy in the field of AC drive. In this proposed method, the control system is based on Space Vector Modulation (SVM, amplitude of voltage in direct- quadrature reference frame (d-q reference and angle of stator flux. Amplitude of stator voltage is controlled by PI torque and PI flux controller. The stator flux angle is adjusted by rotor angular frequency and slip angular frequency. Then, the reference torque and the estimated torque is applied to the input of PI torque controller and the control quadrature axis voltage is determined. The control d-axis voltage is determined from the flux calculator. These q and d axis voltage are converted into amplitude voltage. By applying polar to Cartesian on amplitude voltage and stator flux angle, direct voltage and quadratures voltage are generated. The reference stator voltages in d-q are calculated based on forcing the stator voltage error to zero at next sampling period. By applying inverse park transformation on d-q voltages, the stator voltages in &alpha and &beta frame are generated and apply to SVM. From the output of SVM, the motor control signal is generated and the speed of the induction motor regulated toward the rated speed. The simulation Results have demonstrated exceptional performance in steady and transient states and shows that decrease of torque and flux ripples is achieved in a complete speed range.

  15. Current Matching in Multifold DBP/C70 Organic Solar Cells With Open-Circuit Voltages of up to 6.44 V

    DEFF Research Database (Denmark)

    Ahmadpour, Mehrad; Liu, Yiming; Rubahn, Horst-Günter

    2017-01-01

    In this paper, we demonstrate a novel method for achieving high open-circuit voltages (Voc) in organic solar cells based on tetraphenyldibenzoperiflanthen (DBP) as donor and fullerene (C70) as acceptor molecules, by fabrication of multifold bilayer single cells stacked on top of each other....... As devices based on the material combination of DBP and C70 show relatively high open-circuit voltages of 0.87 V for single junction cells, and as both materials show broad absorption in the visible region pronounced peaks, they become ideal candidates as active layer materials in tandem stacked solar cells......, we demonstrate that the efficiency of these novel devices can be improved from 3.1% to 4.4% (best performing devices) in the case of a fivefold device structure, mainly due to the strong increase in the short-circuit current density, and thus lead to efficient small molecule-based solar cells high...

  16. Isolated PWM DC-AC SICAM with an active capacitive voltage clamp[Pulse Density Modulated; Pulse Width Modulation

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.

    2004-03-15

    In this report an isolated PWM DC-AC SICAM with an active capacitive voltage clamp is presented. AC-DC power supply is implemented in its simplest form: diode rectifier followed by a medium-size charge-storage capacitors and possibly with an EMC filter on the mains entrance. Isolation from the AC mains is achieved using a high frequency (HF) transformer, whose voltages are not audio-modulated. The latter simplifies the design and is expected to have many advantages over the approach where the transformer voltages are modulated in regards to the audio signal reference. Input stage is built as a DC-AC inverter (push-pull, half-bridge or a full-bridge) and operated with 50% duty cycle, with all the challenges to avoid transformer saturation and obtain symmetrical operation. On the secondary side the output section is implemented as rectifier+inverter AC-AC stage, i.e. a true bidirectional bridge, which operation is aimed towards amplification of the audio signal. In order to solve the problem with the commutation of the load current, a dead time between the incoming and outgoing bidirectional switch is implemented, while a capacitive voltage clamp is used to keep the induced overvoltage to reasonable levels. The energy stored in the clamping capacitor is not wasted as in the dissipative clamps, but is rather transferred back to the primary side for further processing using an auxiliary isolated single-switch converter, i.e. an active clamping technique is used. (au)

  17. Recombination dynamics as a key determinant of open circuit voltage in organic bulk heterojunction solar cells: a comparison of four different donor polymers

    Energy Technology Data Exchange (ETDEWEB)

    Maurano, Andrea; Hamilton, Rick; Shuttle, Chris G.; O' Regan, Brian; Zhang, Weimin; McCulloch, Iain; Durrant, James R. [Departments of Chemistry, Imperial College London, South Kensington SW7 2AZ (United Kingdom); Ballantyne, Amy M.; Nelson, Jenny [Departments of Physics, Imperial College London, South Kensington SW7 2AZ (United Kingdom); Azimi, Hamed [Konarka Austria, Altenbergerstrasse 69, A-4040 Linz (Austria); Christian Doppler Laboratory for Surface Optics, Johannes Kepler University, Linz (Austria); Morana, Mauro; Brabec, Christoph J. [Konarka Austria, Altenbergerstrasse 69, A-4040 Linz (Austria)

    2010-11-24

    Transient photovoltage and charge extraction analyses are employed to analyzes charge carrier densities and bimolecular recombination dynamics in organic polymer: fullerene solar cells under open circuit operating conditions, employing four different donor polymers. An equation is derived which allows us to calculate the device V{sub OC} from these kinetic measurements. This equation allows us to calculate voltage output of devices within {+-} 25 meV of directly measured values. This analysis thus allows us to relate device open circuit voltage directly to the kinetics of bimolecular recombination, and thereby the influence of nanomorphology upon device voltage output. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. CH3 NH3 PbBr3 -CH3 NH3 PbI3 Perovskite-Perovskite Tandem Solar Cells with Exceeding 2.2 V Open Circuit Voltage.

    Science.gov (United States)

    Heo, Jin Hyuck; Im, Sang Hyuk

    2016-07-01

    Perovskite-perovskite tandem solar cells with open-circuit voltages of over 2.2 V are reported. These cost-effective, solution-processible perovskite hybrid tandem solar cells with high open-circuit voltages are fabricated by the simple lamination of a front planar MAPbBr3 perovskite cell and a back MAPbI3 planar perovskite solar cell.

  19. A Fast-Processing Modulation Strategy for Three-Phase Four-Leg Neutral-Point-Clamped Inverter Based on the Circuit-Level Decoupling Concept

    DEFF Research Database (Denmark)

    Ghoreishy, Hoda; Zhang, Zhe; Thomsen, Ole Cornelius

    2012-01-01

    the proposed modulation strategy, the four-leg NPC inverter can be decoupled into three three-level Buck converters in each defined operating section. This makes the controller design much simpler compared to the conventional four-leg NPC inverter controllers. Also, this technique can be implemented......In this paper, a modulation strategy based on the circuit-level decoupling concept is proposed and investigated for the three-level four-leg neutral-point-clamped (NPC) inverter,with the aim of delivering power to all sorts of loads, linear/nonlinear and balanced/unbalanced. By applying...... with a simple logic and can be processed very quickly. Moreover, the switching loss is reduced substantially and the dc-link capacitors’ voltages balance is also achieved without any feedback control. The proposed modulation technique is verified by the experiment....

  20. Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

    Science.gov (United States)

    Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

    2011-01-01

    A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

  1. Capacitor-voltage converter circuit based on CMOS%基于CMOS的电容-电压转换电路的设计

    Institute of Scientific and Technical Information of China (English)

    曹俊杰; 邱成军

    2013-01-01

    在MEMS传感器的电容检测电路中,经常要采用电容—电压转换电路.本研究将两相不交叠时钟模块应用到设计中,使得该电路用单个时钟就能进行有效控制,并能够满足MEMS电容检测系统的要求.采用0.25 μm工艺库对电路进行优化并给定了电路仿真的相应结论.仿真结果表明,其CMOS运放部分的增益为77.76 dB,单位增益带宽为5.60 MHz,相位裕量为65.87°,输出摆幅为-2.0~1.89 V,输入共模范围为-1.0 ~1.93V,正摆率为+9.92 V·μs-1,负摆率为5.03 V·μs-,功耗为1.03 mW.该电路适合于pF量级范围内的电容变化,该变化范围为35~1 200 pF,且输出线性度良好.%In the MEMS sensor capacitance detection of circuit,capacitive-voltage conversion circuit is often used.Two phase non-overlapping clock module has been applied to the design,so the circuit can be effectively controlled by a single clock and also be satisfied to the requirements of MEMS capacitive detection system.Using 0.25 μm technology library to optimize the circuit,the appropriate conclusions have been given out to the circuit simulation.The results show that part of its CMOS opamp is gain of 77.76 dB,the bandwidth of unity gain is 5.60 MHz,the phase margin is 65.87°,the output swing is-2.0 ~ 1.89 V,the input common mode range is-1.0 ~ 1.93 V,the positive slew rate is 9.92 V · μ S-1,the negative slew rate is 5.03 V · μ s-1,the power consumption is 1.03 mW.The circuit is suitable for capacitance change in the order of pF within the range of 35 ~ 1 200 pF,and the output is in good linearity.

  2. An all-optical spatial light modulator for field-programmable silicon photonic circuits

    CERN Document Server

    Bruck, Roman; Lalanne, Philippe; Mills, Ben; Thomson, David J; Mashanovich, Goran Z; Reed, Graham T; Muskens, Otto L

    2016-01-01

    Reconfigurable photonic devices capable of routing the flow of light enable flexible integrated-optic circuits that are not hard-wired but can be externally controlled. Analogous to free-space spatial light modulators, we demonstrate all-optical wavefront shaping in integrated silicon-on-insulator photonic devices by modifying the spatial refractive index profile of the device employing ultraviolet pulsed laser excitation. Applying appropriate excitation patterns grants us full control over the optical transfer function of telecommunication-wavelength light travelling through the device, thus allowing us to redefine its functionalities. As a proof-of-concept, we experimentally demonstrate routing of light between the ports of a multimode interference power splitter with more than 97% total efficiency and negligible losses. Wavefront shaping in integrated photonic circuits provides a conceptually new approach toward achieving highly adaptable and field-programmable photonic circuits with applications in optica...

  3. A low-voltage high-speed terahertz spatial light modulator using active metamaterial

    Science.gov (United States)

    Rout, Saroj; Sonkusale, Sameer R.

    2016-11-01

    An all solid-state metamaterial based terahertz (THz) spatial light modulator (SLM) is presented which uses high mobility 2DEG to manipulate the metamaterial resonant frequency (0.45 THz) leading to terahertz wave modulation. The 2DEG is created by embedding pseudomorphic high-electron mobility transistors in the capacitive gap of each electrical-LC resonator, allowing the charge density to be controlled with very low voltage (1 V) and modulating speeds up to 10 MHz while consuming sub-milliwatt power. We have demonstrated our SLM as a 2 × 2 pixel array operating around 0.45 THz by raster scanning a 6 × 6 image of an occluded metal object behind a thick polystyrene screen using a single-pixel THz imaging setup.

  4. Low-Voltage, Low-Power, and Wide-Tuning-Range Ring-VCO for Frequency ΔΣ Modulator

    DEFF Research Database (Denmark)

    Tuan Vu, Cao; Wisland, Dag T.; Lande, Tor Sverre

    A low-voltage, low-power, and wide-tuning-range VCO which converts an analog input voltage to phase information for a frequency ΔΣ modulator is proposed in this paper. The VCO is based on a differential ring oscillator, which is improved with modified symmetric load and a positive feedback in the...

  5. High-voltage integrated active quenching circuit for single photon count rate up to 80 Mcounts/s.

    Science.gov (United States)

    Acconcia, Giulia; Rech, Ivan; Gulinatti, Angelo; Ghioni, Massimo

    2016-08-01

    Single photon avalanche diodes (SPADs) have been subject to a fast improvement in recent years. In particular, custom technologies specifically developed to fabricate SPAD devices give the designer the freedom to pursue the best detector performance required by applications. A significant breakthrough in this field is represented by the recent introduction of a red enhanced SPAD (RE-SPAD) technology, capable of attaining a good photon detection efficiency in the near infrared range (e.g. 40% at a wavelength of 800 nm) while maintaining a remarkable timing resolution of about 100ps full width at half maximum. Being planar, the RE-SPAD custom technology opened the way to the development of SPAD arrays particularly suited for demanding applications in the field of life sciences. However, to achieve such excellent performance custom SPAD detectors must be operated with an external active quenching circuit (AQC) designed on purpose. Next steps toward the development of compact and practical multichannel systems will require a new generation of monolithically integrated AQC arrays. In this paper we present a new, fully integrated AQC fabricated in a high-voltage 0.18 µm CMOS technology able to provide quenching pulses up to 50 Volts with fast leading and trailing edges. Although specifically designed for optimal operation of RE-SPAD devices, the new AQC is quite versatile: it can be used with any SPAD detector, regardless its fabrication technology, reaching remarkable count rates up to 80 Mcounts/s and generating a photon detection pulse with a timing jitter as low as 119 ps full width at half maximum. The compact design of our circuit has been specifically laid out to make this IC a suitable building block for monolithically integrated AQC arrays.

  6. Folded-Cavity Resonators as Key Elements for Optical Filtering and Low-Voltage Electroabsorption Modulation

    Science.gov (United States)

    Djordjev, Kostadin D.; Lin, Chao-Kun; Zhu, Jintian; Bour, David; Tan, Michael R.

    2006-09-01

    Folded-cavity (FC) resonators, which are based on shallow-etched ridge waveguides combined with four deeply etched turning mirrors, are designed and fabricated. The device consists of a resonant FC and a bus waveguide coupled to it through a directional coupler. Optical passive filters, based on this technology, exhibit quality factors in the excess of 5000, with a low insertion loss of 5 dB (including the input coupling loss to a fiber) and more than 15-dB extinction at resonance. When the filter is combined with an electroabsorption active region and is designed to operate in the overcoupled regime, a low-voltage/high-extinction-ratio resonant modulation becomes feasible. The resonant modulator exhibits a low insertion loss (greater than 22-dB extinction at resonance) and offers a low-voltage operation. A change in the applied voltage by 0.7 V (close to the critically coupled conditions) leads to a transmission change of more than 16 dB. Open eye diagrams at 12 Gb/s are presented. To decrease the insertion loss, multiple material bangaps are further monolithically integrated across the wafer by utilizing the quantum-well-intermixing techniques.

  7. Threshold-voltage modulated phase change heterojunction for application of high density memory

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Baihan; Tong, Hao, E-mail: tonghao@hust.edu.cn; Qian, Hang; Miao, Xiangshui [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-09-28

    Phase change random access memory is one of the most important candidates for the next generation non-volatile memory technology. However, the ability to reduce its memory size is compromised by the fundamental limitations inherent in the CMOS technology. While 0T1R configuration without any additional access transistor shows great advantages in improving the storage density, the leakage current and small operation window limit its application in large-scale arrays. In this work, phase change heterojunction based on GeTe and n-Si is fabricated to address those problems. The relationship between threshold voltage and doping concentration is investigated, and energy band diagrams and X-ray photoelectron spectroscopy measurements are provided to explain the results. The threshold voltage is modulated to provide a large operational window based on this relationship. The switching performance of the heterojunction is also tested, showing a good reverse characteristic, which could effectively decrease the leakage current. Furthermore, a reliable read-write-erase function is achieved during the tests. Phase change heterojunction is proposed for high-density memory, showing some notable advantages, such as modulated threshold voltage, large operational window, and low leakage current.

  8. 60-GHz integrated-circuit high data rate quadriphase shift keying exciter and modulator

    Science.gov (United States)

    Grote, A.; Chang, K.

    1984-01-01

    An integrated-circuit quadriphase shift keying (QPSK) exciter and modulator have demonstrated excellent performance directly modulating a carrier frequency of 60 GHz with an output phase error of less than 3 degrees and maximum amplitude error of 0.5 dB. The circuit consists of a 60-GHz Gunn VCO phase-locked to a low-frequency reference source, a 4th subharmonic mixer, and a QPSK modlator packaged into a small volume of 1.8 x 2.5 x 0.35 in. The use of microstrip has the advantages of small size, light-weight, and low-cost fabrication. The unit has the potential for multigigabit data rate applications.

  9. Realizing Small Energy Loss of 0.55 eV, High Open-Circuit Voltage >1 V and High Efficiency >10% in Fullerene-Free Polymer Solar Cells via Energy Driver.

    Science.gov (United States)

    Cheng, Pei; Zhang, Mingyu; Lau, Tsz-Ki; Wu, Yao; Jia, Boyu; Wang, Jiayu; Yan, Cenqi; Qin, Meng; Lu, Xinhui; Zhan, Xiaowei

    2017-03-01

    A new, easy, and efficient approach is reported to enhance the driving force for charge transfer, break tradeoff between open-circuit voltage and short-circuit current, and simultaneously achieve very small energy loss (0.55 eV), very high open-circuit voltage (>1 V), and very high efficiency (>10%) in fullerene-free organic solar cells via an energy driver.

  10. Protecting integrated circuits from excessive charge accumulation during plasma cleaning of multichip modules

    Energy Technology Data Exchange (ETDEWEB)

    Rodenbeck, Christopher T; Girardi, Michael

    2015-04-21

    Internal nodes of a constituent integrated circuit (IC) package of a multichip module (MCM) are protected from excessive charge during plasma cleaning of the MCM. The protected nodes are coupled to an internal common node of the IC package by respectively associated discharge paths. The common node is connected to a bond pad of the IC package. During MCM assembly, and before plasma cleaning, this bond pad receives a wire bond to a ground bond pad on the MCM substrate.

  11. Model parameter estimation approach based on incremental analysis for lithium-ion batteries without using open circuit voltage

    Science.gov (United States)

    Wu, Hongjie; Yuan, Shifei; Zhang, Xi; Yin, Chengliang; Ma, Xuerui

    2015-08-01

    To improve the suitability of lithium-ion battery model under varying scenarios, such as fluctuating temperature and SoC variation, dynamic model with parameters updated realtime should be developed. In this paper, an incremental analysis-based auto regressive exogenous (I-ARX) modeling method is proposed to eliminate the modeling error caused by the OCV effect and improve the accuracy of parameter estimation. Then, its numerical stability, modeling error, and parametric sensitivity are analyzed at different sampling rates (0.02, 0.1, 0.5 and 1 s). To identify the model parameters recursively, a bias-correction recursive least squares (CRLS) algorithm is applied. Finally, the pseudo random binary sequence (PRBS) and urban dynamic driving sequences (UDDSs) profiles are performed to verify the realtime performance and robustness of the newly proposed model and algorithm. Different sampling rates (1 Hz and 10 Hz) and multiple temperature points (5, 25, and 45 °C) are covered in our experiments. The experimental and simulation results indicate that the proposed I-ARX model can present high accuracy and suitability for parameter identification without using open circuit voltage.

  12. Open-circuit voltage deficit, radiative sub-bandgap states, and prospects in quantum dot solar cells.

    Science.gov (United States)

    Chuang, Chia-Hao Marcus; Maurano, Andrea; Brandt, Riley E; Hwang, Gyu Weon; Jean, Joel; Buonassisi, Tonio; Bulović, Vladimir; Bawendi, Moungi G

    2015-05-13

    Quantum dot photovoltaics (QDPV) offer the potential for low-cost solar cells. To develop strategies for continued improvement in QDPVs, a better understanding of the factors that limit their performance is essential. Here, we study carrier recombination processes that limit the power conversion efficiency of PbS QDPVs. We demonstrate the presence of radiative sub-bandgap states and sub-bandgap state filling in operating devices by using photoluminescence (PL) and electroluminescence (EL) spectroscopy. These sub-bandgap states are most likely the origin of the high open-circuit-voltage (VOC) deficit and relatively limited carrier collection that have thus far been observed in QDPVs. Combining these results with our perspectives on recent progress in QDPV, we conclude that eliminating sub-bandgap states in PbS QD films has the potential to show a greater gain than may be attainable by optimization of interfaces between QDs and other materials. We suggest possible future directions that could guide the design of high-performance QDPVs.

  13. Unraveling the High Open Circuit Voltage and High Performance of Integrated Perovskite/Organic Bulk-Heterojunction Solar Cells.

    Science.gov (United States)

    Dong, Shiqi; Liu, Yongsheng; Hong, Ziruo; Yao, Enping; Sun, Pengyu; Meng, Lei; Lin, Yuze; Huang, Jinsong; Li, Gang; Yang, Yang

    2017-08-09

    We have demonstrated high-performance integrated perovskite/bulk-heterojunction (BHJ) solar cells due to the low carrier recombination velocity, high open circuit voltage (VOC), and increased light absorption ability in near-infrared (NIR) region of integrated devices. In particular, we find that the VOC of the integrated devices is dominated by (or pinned to) the perovskite cells, not the organic photovoltaic cells. A Quasi-Fermi Level Pinning Model was proposed to understand the working mechanism and the origin of the VOC of the integrated perovskite/BHJ solar cell, which following that of the perovskite solar cell and is much higher than that of the low bandgap polymer based organic BHJ solar cell. Evidence for the model was enhanced by examining the charge carrier behavior and photovoltaic behavior of the integrated devices under illumination of monochromatic light-emitting diodes at different characteristic wavelength. This finding shall pave an interesting possibility for integrated photovoltaic devices to harvest low energy photons in NIR region and further improve the current density without sacrificing VOC, thus providing new opportunities and significant implications for future industry applications of this kind of integrated solar cells.

  14. Study of the Contributions of Donor and Acceptor Photoexcitations to Open Circuit Voltage in Bulk Heterojunction Organic Solar Cells

    Directory of Open Access Journals (Sweden)

    Douglas Yeboah

    2017-10-01

    Full Text Available One of the key parameters in determining the power conversion efficiency (PCE of bulk heterojunction (BHJ organic solar cells (OSCs is the open circuit voltage . The processes of exciting the donor and acceptor materials individually in a BHJ OSC are investigated and are found to produce two different expressions for . Using the contributions of electron and hole quasi-Fermi levels and charge carrier concentrations, the two different expressions are derived as functions of the energetics of the donor and acceptor materials and the photo-generated charge carrier concentrations, and calculated for a set of donor-acceptor blends. The simultaneous excitation of both the donor and acceptor materials is also considered and the corresponding , which is different from the above two, is derived. The calculated from the photoexcitation of the donor is found to be somewhat comparable with that obtained from the photoexcitation of the acceptor in most combinations of the donor and acceptor materials considered here. It is also found that the calculated from the simultaneous excitations of donor and acceptor in BHJ OSCs is also comparable with the other two . All three thus derived produce similar results and agree reasonably well with the measured values. All three depend linearly on the concentration of the photoexcited charge carriers and hence incident light intensity, which agrees with experimental results. The outcomes of this study are expected to help in finding materials that may produce higher and hence enhanced PCE in BHJ OSCs.

  15. Cascade photonic integrated circuit architecture for electro-optic in-phase quadrature/single sideband modulation or frequency conversion.

    Science.gov (United States)

    Hasan, Mehedi; Hall, Trevor

    2015-11-01

    A photonic integrated circuit architecture for implementing frequency upconversion is proposed. The circuit consists of a 1×2 splitter and 2×1 combiner interconnected by two stages of differentially driven phase modulators having 2×2 multimode interference coupler between the stages. A transfer matrix approach is used to model the operation of the architecture. The predictions of the model are validated by simulations performed using an industry standard software tool. The intrinsic conversion efficiency of the proposed design is improved by 6 dB over the alternative functionally equivalent circuit based on dual parallel Mach-Zehnder modulators known in the prior art. A two-tone analysis is presented to study the linearity of the proposed circuit, and a comparison is provided over the alternative. The proposed circuit is suitable for integration in any platform that offers linear electro-optic phase modulation such as LiNbO(3), silicon, III-V, or hybrid technology.

  16. Using of capacitors for improving the electric power quality in the low voltage circuits; Utilizacao de capacitores para melhoria da qualidade de energia eletrica nos circuitos de baixa tensao

    Energy Technology Data Exchange (ETDEWEB)

    Fassheber Junior, Carlos Frederico [Centrais Eletricas de Santa Catarina (CELESC), Florianopolis, SC (Brazil)]. E-mail: cffassheber@celesc.com.br

    2000-07-01

    The paper discuss the application of a bank of low voltage capacitors which can provide reduction in the loading of the low voltage circuits and in the transformers, more regulation of the voltage, improvement in the power factor, besides the fact of they are natural harmonic filters.

  17. Long Lifetime DC-Link Voltage Stabilization Module for Smart Grid Application

    DEFF Research Database (Denmark)

    Wang, Huai; Chung, Henry; Liu, Wenchao

    2012-01-01

    Power converters enable efficient and flexible control and conversion of electric energy among different smart grid players (i.e. producers, energy storage systems, and loads). One of the expected features of smart grid is that it will be more reliable compared to conventional grid. However, power...... converters are one kind of the lifetime limiting components applied in smart grid. One of the major causes is the malfunction of electrolytic capacitors (E-Caps) which are widely used for stabilizing the dc-link voltage in various types of power converters applied in smart grid. A dc-link module is therefore...

  18. 大容量发电机出口断路器选择%Circuit Breakers Selection Method for Large-capacity AC High-voltage Generator

    Institute of Scientific and Technical Information of China (English)

    张爽

    2011-01-01

    针对大容量发电机出口断路器的选择问题,依据GB/T 14824-2008、IEEE Std C37.013-1997和IEC 60909-0-2001中的计算方法,并结合发电机出口断路器型式试验报告的有关数据,以某百万千瓦级发电机组为例进行了比较计算,分析计算结果,提出了对发电机出口短路器短路电流开断能力不能采用百分比而应采用绝对值进行校验.%For selecting large-capacity AC high-voltage generator circuit breakers in a large generator system, comparative calculations are conducted for a million kilowatts rated generator following the standards of GB/T 14824-2008, IEEE Std C37.013-1997 and IEC 60909-0-2001. The calculation results and the test reports of generator circuit breakers are analyzed, and a suggestion is hence offered that absolute value of short-circuit current should be used for examining the short-circuit current breaking capacity of an AC high-voltage generator circuit breaker instead of percentage value.

  19. Improvement of energy storage motor control circuit of hydraulic actuator in high-voltage circuit breakers%高压断路器液压操动机构储能电机控制回路改进

    Institute of Scientific and Technical Information of China (English)

    张全民; 赵玉柱

    2011-01-01

    高压断路器液压操动机构的常见故障是储能电机频繁启动。通过合理地设计储能电机的控制回路,减少了液压机构频繁启动的现象。%The fault of the mechanism of High voltage circuit-breaker is motor of storaging power high frequency starup.That rationally design control circuit of hydraulic mechanism reduce the fault that motor of storaging power high frequency starup.

  20. Design of a Solid-State Fast Voltage Compensator for klystron modulators requiring constant AC power consumption

    CERN Document Server

    Aguglia, Davide; Viarouge, Philippe; Cros, Jerome

    2014-01-01

    This paper proposes a novel topological solution for klystron modulators integrating a Fast Voltage Compensator which allows an operation at constant power consumption from the utility grid. This kind of solution is mandatory for the CLIC project under study, which requires several hundreds of synchronously operated klystron modulators for a total pulsed power of 39 GW. The topology is optimized for the challenging CLIC specifications, which require a very precise output voltage flat-top as well as fast rise and fall times (3µs). The Fast Voltage Compensator is integrated in the modulator such that it only has to manage the capacitor charger current and a fraction of the charging voltage. Consequently, its dimensioning power and cost is minimized.

  1. Selective modulation of cellular voltage dependent calcium channels by hyperbaric pressure - a suggested HPNS partial mechanism

    Directory of Open Access Journals (Sweden)

    Ben eAviner

    2014-05-01

    Full Text Available Professional deep sea divers experience motor and cognitive impairment, known as High Pressure Neurological Syndrome (HPNS, when exposed to pressures of 100 msw (1.1MPa and above, considered to be the result of synaptic transmission alteration. Previous studies have indicated modulation of presynaptic Ca2+ currents at high pressure. We directly measured for the first time pressure effects on the currents of voltage dependent Ca2+ channels (VDCCs expressed in Xenopus oocytes. Pressure selectivity augmented the current in CaV1.2 and depressed it in CaV3.2 channels. Pressure application also affected the channels' kinetics, such as ƮRise, ƮDecay. Pressure modulation of VDCCs seems to play an important role in generation of HPNS signs and symptoms.

  2. Modulation of voltage-gated potassium Kv2.1 via the cytoplasmic C terminal

    Institute of Scientific and Technical Information of China (English)

    Man Jin; Peiyuan Lu

    2011-01-01

    Voltage-gated potassium channels comprise 12 subtypes (Kv1-Kv12). Kv2.1, which is expressed in most mammalian central neurons, provides the majority of delayed-rectifier K current in cortical and hippocampal pyramidal neurons, and plays an especially prominent role in repolarizing membrane potential, as well as in facilitation of exocytosis. Kv2.1-encoded K efflux is essential for neuronal apoptosis programming. The human form of the Kv2.1 potassium channel contains large intracellular regions. The cytoplasmic C-terminal plays a key role in modulating Kv2.1 gating. The present manuscript summarized Kv2.1 structure and modulation in neurons and analyzed the roles of the cytoplasmic C-terminal.

  3. PIP2 regulation of KCNQ channels: biophysical and molecular mechanisms for lipid modulation of voltage-dependent gating

    Directory of Open Access Journals (Sweden)

    Mark Alan Zaydman

    2014-05-01

    Full Text Available Voltage-gated potassium (Kv channels contain voltage-sensing (VSD and pore-gate (PGD structural domains. During voltage-dependent gating, conformational changes in the two domains are coupled giving rise to voltage-dependent opening of the channel. In addition to membrane voltage, KCNQ (Kv7 channel opening requires the membrane lipid phosphatidylinositol 4,5-bisphosphate (PIP2. Recent studies suggest that PIP2 serves as a cofactor to mediate VSD-PGD coupling in KCNQ1 channels. In this review, we put these findings in the context of the current understanding of voltage-dependent gating, lipid modulation of Kv channel activation, and PIP2-regulation of KCNQ channels. We suggest that lipid-mediated coupling of functional domains is a common mechanism among KCNQ channels that may be applicable to other Kv channels and membrane proteins.

  4. PIP2 regulation of KCNQ channels: biophysical and molecular mechanisms for lipid modulation of voltage-dependent gating.

    Science.gov (United States)

    Zaydman, Mark A; Cui, Jianmin

    2014-01-01

    Voltage-gated potassium (Kv) channels contain voltage-sensing (VSD) and pore-gate (PGD) structural domains. During voltage-dependent gating, conformational changes in the two domains are coupled giving rise to voltage-dependent opening of the channel. In addition to membrane voltage, KCNQ (Kv7) channel opening requires the membrane lipid phosphatidylinositol 4,5-bisphosphate (PIP2). Recent studies suggest that PIP2 serves as a cofactor to mediate VSD-PGD coupling in KCNQ1 channels. In this review, we put these findings in the context of the current understanding of voltage-dependent gating, lipid modulation of Kv channel activation, and PIP2-regulation of KCNQ channels. We suggest that lipid-mediated coupling of functional domains is a common mechanism among KCNQ channels that may be applicable to other Kv channels and membrane proteins.

  5. Compact high voltage, high peak power, high frequency transformer for converter type modulator applications.

    Science.gov (United States)

    Reghu, T; Mandloi, V; Shrivastava, Purushottam

    2016-04-01

    The design and development of a compact high voltage, high peak power, high frequency transformer for a converter type modulator of klystron amplifiers is presented. The transformer has been designed to operate at a frequency of 20 kHz and at a flux swing of ±0.6 T. Iron (Fe) based nanocrystalline material has been selected as a core for the construction of the transformer. The transformer employs a specially designed solid Teflon bobbin having 120 kV insulation for winding the high voltage secondary windings. The flux swing of the core has been experimentally found by plotting the hysteresis loop at actual operating conditions. Based on the design, a prototype transformer has been built which is per se a unique combination of high voltage, high frequency, and peak power specifications. The transformer was able to provide 58 kV (pk-pk) at the secondary with a peak power handling capability of 700 kVA. The transformation ratio was 1:17. The performance of the transformer is also presented and discussed.

  6. Large voltage modulation in superconducting quantum interference devices with submicron-scale step-edge junctions

    Science.gov (United States)

    Lam, Simon K. H.

    2017-09-01

    A promising direction to improve the sensitivity of a SQUID is to increase its junction's normal resistance value, Rn, as the SQUID modulation voltage scales linearly with Rn. As a first step to develop highly sensitive single layer SQUID, submicron scale YBCO grain boundary step edge junctions and SQUIDs with large Rn were fabricated and studied. The step-edge junctions were reduced to submicron scale to increase their Rn values using focus ion beam, FIB and the measurement of transport properties were performed from 4.3 to 77 K. The FIB induced deposition layer proves to be effective to minimize the Ga ion contamination during the FIB milling process. The critical current-normal resistance value of submicron junction at 4.3 K was found to be 1-3 mV, comparable to the value of the same type of junction in micron scale. The submicron junction Rn value is in the range of 35-100 Ω, resulting a large SQUID modulation voltage in a wide temperature range. This performance promotes further investigation of cryogen-free, high field sensitivity SQUID applications at medium low temperature, e.g. at 40-60 K.

  7. Lattice-matched Cu2ZnSnS4/CeO2 solar cell with open circuit voltage boost

    DEFF Research Database (Denmark)

    Crovetto, Andrea; Yan, Chang; Iandolo, Beniamino

    2016-01-01

    We report a reproducible enhancement of the open circuit voltage in Cu2ZnSnS4 solar cells by introduction of a very thin CeO2 interlayer between the Cu2ZnSnS4 absorber and the conventional CdS buffer. CeO2, a non-toxic earth-abundant compound, has a nearly optimal band alignment with Cu2ZnSnS4...... and the two materials are lattice-matched within 0.4%. This makes it possible to achieve an epitaxial interface when growing CeO2 by chemical bath deposition at temperatures as low as 50 °C. The open circuit voltage improvement is then attributed to a decrease in the interface recombination rate through...

  8. Lattice-matched Cu2ZnSnS4/CeO2 solar cell with open circuit voltage boost

    Science.gov (United States)

    Crovetto, Andrea; Yan, Chang; Iandolo, Beniamino; Zhou, Fangzhou; Stride, John; Schou, Jørgen; Hao, Xiaojing; Hansen, Ole

    2016-12-01

    We report a reproducible enhancement of the open circuit voltage in Cu2ZnSnS4 solar cells by introduction of a very thin CeO2 interlayer between the Cu2ZnSnS4 absorber and the conventional CdS buffer. CeO2, a non-toxic earth-abundant compound, has a nearly optimal band alignment with Cu2ZnSnS4 and the two materials are lattice-matched within 0.4%. This makes it possible to achieve an epitaxial interface when growing CeO2 by chemical bath deposition at temperatures as low as 50 °C. The open circuit voltage improvement is then attributed to a decrease in the interface recombination rate through formation of a high-quality heterointerface.

  9. New Modulation Strategy to Balance the Neutral-Point Voltage for Three-Level Neutral-Clamped Inverter Systems

    DEFF Research Database (Denmark)

    Choi, Uimin; Lee, June-Seok; Lee, Kyo-Beum

    2014-01-01

    This paper proposes a new modulation strategy that balances the neutral-point voltage for three-level neutral-clamped inverter systems. The proposed modulation replaces the P-type or N-type small switching states with other switching states that do not affect the neutral-point voltage. The zero...... and medium switching states are employed to help the neutral-point voltage balancing. This method little bit increases the switching events and output total harmonic distortion. However, this method has a strong balancing ability at all regions. Further, it is very simple to implement in both space vector...... modulation and carrier-based PWM methods. Simulation and experimental results verify the validity and feasibility of the proposed new modulation strategy....

  10. Design of a Sample and Hold Circuit using Rail to Rail Low Voltage Compact Operational Amplifier and bootstrap Switching

    Directory of Open Access Journals (Sweden)

    Annu Saini

    2014-09-01

    Full Text Available This paper presents a low power high performance and higher sampling speed sample and hold circuit. The proposed circuit is designed at 180 nm technology and has high linearity. The circuit can be used for the ADC frontend applications and supports double sampling architecture. The proposed sample and hold circuit has common mode range beyond rail to rail and uses two differential pairs transistor stages connected in parallel as its input stage.

  11. Transient Receptor Potential Vanilloid 4-Induced Modulation of Voltage-Gated Sodium Channels in Hippocampal Neurons.

    Science.gov (United States)

    Hong, Zhiwen; Jie, Pinghui; Tian, Yujing; Chen, Tingting; Chen, Lei; Chen, Ling

    2016-01-01

    Transient receptor potential vanilloid 4 (TRPV4) is reported to control the resting membrane potential and increase excitability in many types of cells. Voltage-gated sodium channels (VGSCs) play an important role in initiating action potentials in neurons. However, whether VGSCs can be modulated by the activation of TRPV4 in hippocampal pyramidal neurons remains unknown. In this study, we tested the effect of TRPV4 agonists (GSK1016790A and 4α-PDD) on voltage-gated sodium current (I Na) in hippocampal CA1 pyramidal neurons and the protein levels of α/β-subunit of VGSCs in the hippocampus of mice subjected to intracerebroventricular (icv.) injection of GSK1016790A (GSK-injected mice). Herein, we report that I Na was inhibited by acute application of GSK1016790A or 4α-PDD. In the presence of TRPV4 agonists, the voltage-dependent inactivation curve shifted to the hyperpolarization, whereas the voltage-dependent activation curve remained unchanged. The TRPV4 agonist-induced inhibition of I Na was blocked by the TRPV4 antagonist or tetrodotoxin. Moreover, blocking protein kinase A (PKA) markedly attenuated the GSK1016790A-induced inhibition of I Na, whereas antagonism of protein kinase C or p38 mitogen-activated protein kinase did not change GSK1016790A action. Finally, the protein levels of Nav1.1, Nav1.2, and Nav1.6 in the hippocampus increased in GSK-injected mice, whereas those of Nav1.3 and Navβ1 remained nearly unchanged. We conclude that I Na is inhibited by the acute activation of TRPV4 through PKA signaling pathway in hippocampal pyramidal neurons, but protein expression of α-subunit of VGSCs is increased by sustained TRPV4 activation, which may compensate for the acute inhibition of I Na and provide a possibility for hyper-excitability upon sustained TRPV4 activation.

  12. Triple voltage dc-to-dc converter and method

    Science.gov (United States)

    Su, Gui-Jia

    2008-08-05

    A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

  13. Mechanical Fault Diagnosis of High Voltage Circuit Breakers Based on Variational Mode Decomposition and Multi-Layer Classifier

    Directory of Open Access Journals (Sweden)

    Nantian Huang

    2016-11-01

    Full Text Available Mechanical fault diagnosis of high-voltage circuit breakers (HVCBs based on vibration signal analysis is one of the most significant issues in improving the reliability and reducing the outage cost for power systems. The limitation of training samples and types of machine faults in HVCBs causes the existing mechanical fault diagnostic methods to recognize new types of machine faults easily without training samples as either a normal condition or a wrong fault type. A new mechanical fault diagnosis method for HVCBs based on variational mode decomposition (VMD and multi-layer classifier (MLC is proposed to improve the accuracy of fault diagnosis. First, HVCB vibration signals during operation are measured using an acceleration sensor. Second, a VMD algorithm is used to decompose the vibration signals into several intrinsic mode functions (IMFs. The IMF matrix is divided into submatrices to compute the local singular values (LSV. The maximum singular values of each submatrix are selected as the feature vectors for fault diagnosis. Finally, a MLC composed of two one-class support vector machines (OCSVMs and a support vector machine (SVM is constructed to identify the fault type. Two layers of independent OCSVM are adopted to distinguish normal or fault conditions with known or unknown fault types, respectively. On this basis, SVM recognizes the specific fault type. Real diagnostic experiments are conducted with a real SF6 HVCB with normal and fault states. Three different faults (i.e., jam fault of the iron core, looseness of the base screw, and poor lubrication of the connecting lever are simulated in a field experiment on a real HVCB to test the feasibility of the proposed method. Results show that the classification accuracy of the new method is superior to other traditional methods.

  14. High-fidelity pulse density modulation in neuromorphic electric circuits utilizing natural heterogeneity

    Science.gov (United States)

    Utagawa, Akira; Asai, Tetsuya; Amemiya, Yoshihito

    Hospedales et al. have recently proposed a neural network model of the “vestibulo-ocular reflex” (VOR) in which a common input was given to multiple nonidentical spiking neurons that were exposed to uncorrelated temporal noise, and the output was represented by the sum of these neurons. Although the function of the VOR network is equivalent to pulse density modulation, the neurons' non-uniformity and temporal noises given to the neurons were shown to improve the output spike's fidelity to the analog input. In this paper, we propose a CMOS analog circuit for implementing the VOR network that exploits the non-uniformity of real MOS devices. Through extensive laboratory experiments using discrete MOS devices, we show that the output's fidelity to the input pulses is clearly improved by using multiple neuron circuits, in which the non-uniformity is naturally embedded into the devices.

  15. SEMICONDUCTOR INTEGRATED CIRCUITS: 4 GHz bit-stream adder based on ΣΔ modulation

    Science.gov (United States)

    Yong, Liang; Zhigong, Wang; Qiao, Meng; Xiaodan, Guo

    2010-08-01

    The conventional circuit model of a bit-stream adder based on sigma delta (ΣΔ) modulation is improved with pipeline technology to make it work correctly at high frequencies. The integrated circuit (IC) of the bit-stream adder is designed with the source coupled logic structure and designed at the transistor level to increase the operating frequency. The IC is fabricated in TSMC's 0.18-μm CMOS process. The chip area is 475 × 570 μm2. A fully digital ΣΔ signal generator is designed with a field programmable gate array to test the chip. Experimental results show that the chip meets the function and performance demand of the design, and the chip can work at a frequency of higher than 4 GHz. The noise performance of the adder is analyzed and compared with both theory and experimental results.

  16. Correlation Between the Raman Crystallinity of p-Type Micro-Crystalline Silicon Layer and Open Circuit Voltage of n-i-p Solar Cells.

    Science.gov (United States)

    Jung, Junhee; Kim, Sunbo; Park, Jinjoo; Shin, Chonghoon; Pham, Duy Phong; Kim, Jiwoong; Chung, Sungyoun; Lee, Youngseok; Yi, Junsin

    2015-10-01

    This article mainly discusses the difference between p-i-n and n-i-p type solar cells. Their structural difference has an effect on cell performance, such as open circuit voltage and fill factor. Although the deposition conditions are the same for both p-i-n and n-i-p cases, the substrate layers for depositing p-type microcrystalline silicon layers differ. In n-i-p cells, the substrate layer is p-type amorphous silicon oxide layer; whereas, in p-i-n cells, the substrate layer is ZnO:Al. The interfacial change leads to a 12% difference in the crystallinity of the p-type microcrystalline silicon layers. When the p-type microcrystalline silicon layer's crystallinity was not sufficient to activate an internal electric field, the open circuit voltage and fill factor decreased 0.075 V and 7.36%, respectively. We analyzed this problem by comparing the Raman spectra, electrical conductivity, activation energy and solar cell performance. By adjusting the thickness of the p-type microcrystalline silicon layer, we increased the open circuit voltage of the n-i-p cell from 0.835 to 0.91 V.

  17. 空间辐射探测器滤波电路的设计%Design of Filter Circuit in High Voltage Unit of Particle Detector

    Institute of Scientific and Technical Information of China (English)

    施伟红; 于向前; 陈鸿飞; 邹鸿; 邹积清; 刘建文; 崔战国; 邵思霈

    2012-01-01

    To meet high stability, low ripple requirements of High Voltage Unit in Particle radiation detectors, to design a hybrid LC and RC filter circuit to reduce power supply ripple. Through the theoretical analysis, Pspice simulation and test,the results are verified. According to this design,a High Voltage Unit was made in a high -energy particle detector on a Satelite, output voltage ripple coefficient is small, met the design purposes. Test proved that this circuit design, simple, efficient, can provide a reference for this kind of circuit design.%为满足粒子辐射探测器高压电源高稳定、低纹波的要求,设计一种LC和RC混合滤波电路来降低电源纹波,并进行理论分析、PSpice仿真和试验对结果进行验证.按照这种设计实现的某型号卫星高能粒子探测器的高压电源,输出电压稳定、纹波系数小,达到设计目的.试验证明这种电路设计简单、高效,可为相关电路设计提供参考.

  18. Polypyrrole: FeOx·ZnO nanoparticle solar cells with breakthrough open-circuit voltage prepared from relatively stable liquid dispersions

    KAUST Repository

    Zong, Baoyu

    2014-01-01

    Organic hybrid solar cells with a large open-circuit voltage, up to above that of 1.5 V standard battery voltage, were demonstrated using blends of polypyrrole: Fe2O3·ZnO nanoparticles as active-layers. The cell active-layers were readily coated in open air from relatively stable liquid dark-color polypyrrole-based dispersions, which were synthesized using appropriate surfactants during the in situ polymerization of pyrrole with FeCl3 or both H2O2 and FeCl3 as the oxidizers. The performance of the cells depends largely on the synthesized blend phase, which is determined by the surfactants, oxidizers, as well as the reactant ratio. Only the solar cells fabricated from the stable dispersions can produce both a high open-circuit voltage (>1.0 V) and short-circuit current (up to 7.5 mA cm-2) due to the relatively uniform porous network nanomorphology and higher shunt to series resistance ratio of the active-layers. The cells also display a relatively high power-conversion efficiency of up to ∼3.8%. This journal is

  19. Sexual modulation of sex-shared neurons and circuits in Caenorhabditis elegans.

    Science.gov (United States)

    Portman, Douglas S

    2017-01-02

    Studies using the nematode C. elegans have provided unique insights into the development and function of sex differences in the nervous system. Enabled by the relative simplicity of this species, comprehensive studies have solved the complete cellular neuroanatomy of both sexes as well as the complete neural connectomes of the entire adult hermaphrodite and the adult male tail. This work, together with detailed behavioral studies, has revealed three aspects of sex differences in the nervous system: sex-specific neurons and circuits; circuits with sexually dimorphic synaptic connectivity; and sex differences in the physiology and functions of shared neurons and circuits. At all of these levels, biological sex influences neural development and function through the activity of a well-defined genetic hierarchy that acts throughout the body to translate chromosomal sex into the state of a master autosomal regulator of sexual differentiation, the transcription factor TRA-1A. This Review focuses on the role of genetic sex in implementing sex differences in shared neurons and circuits, with an emphasis on linking the sexual modulation of specific neural properties to the specification and optimization of sexually divergent and dimorphic behaviors. An important and unexpected finding from these studies is that chemosensory neurons are a primary focus of sexual modulation, with genetic sex adaptively shaping chemosensory repertoire to guide behavioral choice. Importantly, hormone-independent functions of genetic sex are the principal drivers of all of these sex differences, making nematodes an excellent model for understanding similar but poorly understood mechanisms that likely act throughout the animal kingdom. © 2016 Wiley Periodicals, Inc.

  20. TIME DOMAIN REFLECTOMETRY FOR THE LOCALIZATION OF ELECTRICAL FAULTS IN THE INSTRUMENTATION OF THE LHC STRING MAGNETS A Study Case of Voltage Tap, Temperature, and Pressure Transducer Circuits

    CERN Document Server

    Komorowski, P

    1999-01-01

    Time Domain Reflectometry (TDR) is one of the most powerful methods used to analyze the integrity of the signal propagating in a transmission line. The method is based on the principle that the wave propagating in the line is reflected at the locations where the impedance of the line changes. The fault points, joints, branches, junctions, abrupt cross-section changes, etc., cause such reflections. The reflectometry technique involves the excitation of the circuit under test with either a fast edge step function or a well-defined impulse confined in time and frequency domains, and thereafter detection of the amplitude and time of the reflections. Both variants of the method were successfully applied to localize open circuit faults in the voltage tap connections, pressure transducers, and temperature sensing carbon gages circuits of the LHC String Dipole Magnet MB2 and Short Straight Section Quadrupole.

  1. SEMICONDUCTOR INTEGRATED CIRCUITS: A current-mode voltage regulator with an embedded sub-threshold reference for a passive UHF RFID transponder

    Science.gov (United States)

    Zhongqi, Liu; Chun, Zhang; Yongming, Li; Zhihua, Wang

    2010-06-01

    This paper presents a current-mode voltage regulator for a passive UHF RFID transponder. The passive tag power is extracted from RF energy through the RF-to-DC rectifier. Due to huge variations of the incoming RF power, the rectifier output voltage should be regulated to achieve a stable power supply. By accurately controlling the current flowing into the load with an embedded sub-threshold reference, the regulated voltage varies in a range of 1-1.3 V from -20 to 80 °C, and a bandwidth of about 100 kHz is achieved for a fast power recovery. The circuit is fabricated in UMC 0.18 μm mixed-mode CMOS technology, and the current consumption is only 1 μA.

  2. Short-term solar wind modulation of the global electric circuit

    Science.gov (United States)

    Engfer, Daniel William

    Five separate key day sets are used to determine correlations between two candidate solar wind mechanisms and changes in atmospheric parameters at Mauna Loa Observatory in Hawaii and Colaba Observatory in India. We evaluate responses of these parameters to external modulation of the global electric circuit by the solar wind using the superposed epoch method of analysis. The results are interpreted in terms of a simplified global electric circuit model with two parallel return paths, one at low to middle geomagnetic latitudes and the other at middle to high geomagnetic latitudes. We find responses similar to those expected from external modulation, but of marginal statistical significance. The Mauna Loa set contains current density, potential gradient and positive and negative conductivity data for the 1976-1984 period, while the Colaba set contains potential gradient data through the 1936-1966 period. A data reduction technique is devised to increase the signal to noise ratio of our results by removing noisy data and periodic variations from these ground-based data sets. Throughout this process diurnal and annual variations of these parameters at both sites are evaluated and compared with available observations by other researchers. Using two separate key day sets and data from the Dynamics Explorer 2 satellite for the August 1981 to February 1983 time period, we endeavor to determine correlations between changes in ionospheric horizontal potential gradients and solar wind related physical inputs using superposed epoch analysis. In this manner, responses to external inputs are revealed for potential gradients of various latitudinal extents 5md ranges of local time. The local time variation is evaluated and subtracted from all potential gradients to increase the signal to noise ratio of the results. We also consider the possible effects of solar wind-modulated ionospheric potential gradients on the global electric circuit.

  3. A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

    DEFF Research Database (Denmark)

    Wu, Rui; Wang, Huai; Pedersen, Kristian Bonderup;

    2016-01-01

    A basic challenge in the IGBT transient simulation study is to obtain the realistic junction temperature, which demands not only accurate electrical simulations but also precise thermal impedance. This paper proposed a transient thermal model for IGBT junction temperature simulations during short...... circuits or overloads. The updated Cauer thermal model with varying thermal parameters is obtained by means of FEM thermal simulations with temperature-dependent physical parameters. The proposed method is applied to a case study of a 1700 V/1000 A IGBT module. Furthermore, a testing setup is built up...

  4. On Neuron Membrane Potential Distributions for Voltage and Time Dependent Current Modulation

    Science.gov (United States)

    Salig, J. B.; Carpio-Bernido, M. V.; Bernido, C. C.; Bornales, J. B.

    Tracking variations of neuronal membrane potential in response to multiple synaptic inputs remains an important open field of investigation since information about neural network behavior and higher brain functions can be inferred from such studies. Much experimental work has been done, with recent advances in multi-electrode recordings and imaging technology giving exciting results. However, experiments have also raised questions of compatibility with available theoretical models. Here we show how methods of modern infinite dimensional analysis allow closed form expressions for important quantities rich in information such as the conditional probability density (cpd). In particular, we use a Feynman integral approach where fluctuations in the dynamical variable are parametrized with Hida white noise variables. The stochastic process described then gives variations in time of the relative membrane potential defined as the difference between the neuron membrane and firing threshold potentials. We obtain the cpd for several forms of current modulation coefficients reflecting the flow of synaptic currents, and which are analogous to drift coefficients in the configuration space Fokker-Planck equation. In particular, we consider cases of voltage and time dependence for current modulation for periodic and non-periodic oscillatory current modulation described by sinusoidal and Bessel functions.

  5. The Circuit-Level Decoupling Modulation Strategy for Three-Level Neutral-Point-Clamped (TL-NPC) Inverter

    DEFF Research Database (Denmark)

    Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.

    2011-01-01

    In this paper, a circuit-level decoupling modulation strategy is proposed for the three-level (TL) neutral-point-clamped (NPC) inverters. With the proposed modulation scheme, the TL-NPC inverter can be decoupled into two three-level Buck converters in each defined operating section, which makes...... without any feedback control. The simulation results show the validity of theoretical analysis....

  6. The Circuit-Level Decoupling Modulation Strategy for Three-Level Neutral-Point-Clamped (TL-NPC) Inverter

    DEFF Research Database (Denmark)

    Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.

    2011-01-01

    In this paper, a circuit-level decoupling modulation strategy is proposed for the three-level (TL) neutral-point-clamped (NPC) inverters. With the proposed modulation scheme, the TL-NPC inverter can be decoupled into two three-level Buck converters in each defined operating section, which makes...

  7. A New Modulation Strategy for Unbalanced Two Phase Induction Motor Drives Using a Three-Leg Voltage Source Inverter

    Science.gov (United States)

    Sinthusonthishat, S.; Kinnares, V.

    This paper proposes a new modulation scheme providing unbalanced output terminal voltages of a standard three-leg voltage source inverter (VSI) for unsymmetrical type two-phase induction motors. This strategy allows a control method of the output voltages with typically constant V/Hz for a main winding and with voltage boost to compensate magnitude of current for an auxiliary winding. Harmonic voltage characteristics and the motor performance are investigated under a wide range of operating conditions. Practical verification is presented to confirm correctness and capabilities of the proposed technique. All results are compared to those of a conventional two-leg half bridge topology. The results show that the simulation results well agree with the experimental ones, and also the proposed scheme is superior to the conventional drive.

  8. Nanosecond pulsed electric fields (nsPEFs) low cost generator design using power MOSFET and Cockcroft-Walton multiplier circuit as high voltage DC source

    Science.gov (United States)

    Sulaeman, M. Y.; Widita, R.

    2014-09-01

    Purpose: Non-ionizing radiation therapy for cancer using pulsed electric field with high intensity field has become an interesting field new research topic. A new method using nanosecond pulsed electric fields (nsPEFs) offers a novel means to treat cancer. Not like the conventional electroporation, nsPEFs able to create nanopores in all membranes of the cell, including membrane in cell organelles, like mitochondria and nucleus. NsPEFs will promote cell death in several cell types, including cancer cell by apoptosis mechanism. NsPEFs will use pulse with intensity of electric field higher than conventional electroporation, between 20-100 kV/cm and with shorter duration of pulse than conventional electroporation. NsPEFs requires a generator to produce high voltage pulse and to achieve high intensity electric field with proper pulse width. However, manufacturing cost for creating generator that generates a high voltage with short duration for nsPEFs purposes is highly expensive. Hence, the aim of this research is to obtain the low cost generator design that is able to produce a high voltage pulse with nanosecond width and will be used for nsPEFs purposes. Method: Cockcroft-Walton multiplier circuit will boost the input of 220 volt AC into high voltage DC around 1500 volt and it will be combined by a series of power MOSFET as a fast switch to obtain a high voltage with nanosecond pulse width. The motivation using Cockcroft-Walton multiplier is to acquire a low-cost high voltage DC generator; it will use capacitors and diodes arranged like a step. Power MOSFET connected in series is used as voltage divider to share the high voltage in order not to damage them. Results: This design is expected to acquire a low-cost generator that can achieve the high voltage pulse in amount of -1.5 kV with falltime 3 ns and risetime 15 ns into a 50Ω load that will be used for nsPEFs purposes. Further detailed on the circuit design will be explained at presentation.

  9. Nanosecond pulsed electric fields (nsPEFs) low cost generator design using power MOSFET and Cockcroft-Walton multiplier circuit as high voltage DC source

    Energy Technology Data Exchange (ETDEWEB)

    Sulaeman, M. Y.; Widita, R. [Department of Physics, Nuclear Physics and Biophysics Research Division, Faculty of Mathematics and Natural Science, Institut Teknologi Bandung, Bandung (Indonesia)

    2014-09-30

    Purpose: Non-ionizing radiation therapy for cancer using pulsed electric field with high intensity field has become an interesting field new research topic. A new method using nanosecond pulsed electric fields (nsPEFs) offers a novel means to treat cancer. Not like the conventional electroporation, nsPEFs able to create nanopores in all membranes of the cell, including membrane in cell organelles, like mitochondria and nucleus. NsPEFs will promote cell death in several cell types, including cancer cell by apoptosis mechanism. NsPEFs will use pulse with intensity of electric field higher than conventional electroporation, between 20–100 kV/cm and with shorter duration of pulse than conventional electroporation. NsPEFs requires a generator to produce high voltage pulse and to achieve high intensity electric field with proper pulse width. However, manufacturing cost for creating generator that generates a high voltage with short duration for nsPEFs purposes is highly expensive. Hence, the aim of this research is to obtain the low cost generator design that is able to produce a high voltage pulse with nanosecond width and will be used for nsPEFs purposes. Method: Cockcroft-Walton multiplier circuit will boost the input of 220 volt AC into high voltage DC around 1500 volt and it will be combined by a series of power MOSFET as a fast switch to obtain a high voltage with nanosecond pulse width. The motivation using Cockcroft-Walton multiplier is to acquire a low-cost high voltage DC generator; it will use capacitors and diodes arranged like a step. Power MOSFET connected in series is used as voltage divider to share the high voltage in order not to damage them. Results: This design is expected to acquire a low-cost generator that can achieve the high voltage pulse in amount of −1.5 kV with falltime 3 ns and risetime 15 ns into a 50Ω load that will be used for nsPEFs purposes. Further detailed on the circuit design will be explained at presentation.

  10. Female contact modulates male aggression via a sexually dimorphic GABAergic circuit in Drosophila.

    Science.gov (United States)

    Yuan, Quan; Song, Yuanquan; Yang, Chung-Hui; Jan, Lily Yeh; Jan, Yuh Nung

    2014-01-01

    Intraspecific male-male aggression, which is important for sexual selection, is regulated by environment, experience and internal states through largely undefined molecular and cellular mechanisms. To understand the basic neural pathway underlying the modulation of this innate behavior, we established a behavioral assay in Drosophila melanogaster and investigated the relationship between sexual experience and aggression. In the presence of mating partners, adult male flies exhibited elevated levels of aggression, which was largely suppressed by prior exposure to females via a sexually dimorphic neural mechanism. The suppression involved the ability of male flies to detect females by contact chemosensation through the pheromone-sensing ion channel ppk29 and was mediated by male-specific GABAergic neurons acting on the GABAA receptor RDL in target cells. Silencing or activating this circuit led to dis-inhibition or elimination of sex-related aggression, respectively. We propose that the GABAergic inhibition represents a critical cellular mechanism that enables prior experience to modulate aggression.

  11. Amplitude Modulation and Synchronization of Fractional-Order Memristor-Based Chua's Circuit

    Directory of Open Access Journals (Sweden)

    A. G. Radwan

    2013-01-01

    Full Text Available This paper presents a general synchronization technique and an amplitude modulation of chaotic generators. Conventional synchronization and antisynchronization are considered a very narrow subset from the proposed technique where the scale between the output response and the input response can be controlled via control functions and this scale may be either constant (positive, negative or time dependent. The concept of the proposed technique is based on the nonlinear control theory and Lyapunov stability theory. The nonlinear controller is designed to ensure the stability and convergence of the proposed synchronization scheme. This technique is applied on the synchronization of two identical fractional-order Chua's circuit systems with memristor. Different examples are studied numerically with different system parameters, different orders, and with five alternative cases where the scaling functions are chosen to be positive/negative and constant/dynamic which covers all possible cases from conventional synchronization to the amplitude modulation cases to validate the proposed concept.

  12. Acousto-Optic Modulation and Optoacoustic Gating in Piezo-Optomechanical Circuits

    Science.gov (United States)

    Balram, Krishna C.; Davanço, Marcelo I.; Ilic, B. Robert; Kyhm, Ji-Hoon; Song, Jin Dong; Srinivasan, Kartik

    2017-02-01

    Acoustic-wave devices provide a promising chip-scale platform for efficiently coupling radio frequency (rf) and optical fields. Here, we use an integrated piezo-optomechanical circuit platform that exploits both the piezoelectric and photoelastic coupling mechanisms to link 2.4-GHz rf waves to 194-THz (1550 nm) optical waves, through coupling to propagating and localized 2.4-GHz acoustic waves. We demonstrate acousto-optic modulation, resonant in both the optical and mechanical domains, in which waveforms encoded on the rf carrier are mapped to the optical field. We also show optoacoustic gating, in which the application of modulated optical pulses interferometrically gates the transmission of propagating acoustic pulses. The time-domain characteristics of this system under both pulsed rf and pulsed optical excitation are considered in the context of the different physical pathways involved in driving the acoustic waves, and modeled through the coupled mode equations of cavity optomechanics.

  13. Acousto-optic and opto-acoustic modulation in piezo-optomechanical circuits

    CERN Document Server

    Balram, Krishna C; Ilic, B Robert; Kyhm, Ji-Hoon; Song, Jin Dong; Srinivasan, Kartik

    2016-01-01

    Acoustic wave devices provide a promising chip-scale platform for efficiently coupling radio frequency (RF) and optical fields. Here, we use an integrated piezo-optomechanical circuit platform that exploits both the piezoelectric and photoelastic coupling mechanisms to link 2.4 GHz RF waves to 194 THz (1550 nm) optical waves, through coupling to propagating and localized 2.4 GHz acoustic waves. We demonstrate acousto-optic modulation, resonant in both the optical and mechanical domains, in which waveforms encoded on the RF carrier are mapped to the optical field. We also show opto-acoustic modulation, in which the application of optical pulses gates the transmission of propagating acoustic waves. The time-domain characteristics of this system under both pulsed RF and pulsed optical excitation are considered in the context of the different physical pathways involved in driving the acoustic waves, and modeled through the coupled mode equations of cavity optomechanics.

  14. An image reconstruction framework based on boundary voltages for ultrasound modulated electrical impedance tomography

    Science.gov (United States)

    Song, Xizi; Xu, Yanbin; Dong, Feng

    2016-11-01

    A new image reconstruction framework based on boundary voltages is presented for ultrasound modulated electrical impedance tomography (UMEIT). Combining the electric and acoustic modalities, UMEIT reconstructs the conductivity distribution with more measurements with position information. The proposed image reconstruction framework begins with approximately constructing the sensitivity matrix of the imaging object with inclusion. Then the conductivity is recovered from the boundary voltages of the imaging object. To solve the nonlinear inverse problem, an optimization method is adopted and the iterative method is tested. Compared with that for electrical resistance tomography (ERT), the newly constructed sensitivity matrix is more sensitive to the inclusion, even in the center of the imaging object, and it contains more effective information about the inclusions. Finally, image reconstruction is carried out by the conjugate gradient algorithm, and results show that reconstructed images with higher quality can be obtained for UMEIT with a faster convergence rate. Both theory and image reconstruction results validate the feasibility of the proposed framework for UMEIT and confirm that UMEIT is a potential imaging technique.

  15. A Survey of Non-conventional Techniques for Low-voltage Low-power Analog Circuit Design

    National Research Council Canada - National Science Library

    F. Khateb; S. Bay Abo Dabbous; S. Vlassis

    2013-01-01

    ...). Therefore, this paper presents the operation principle, the advantages and disadvantages of each of these techniques, enabling circuit designers to choose the proper design technique based on application...

  16. Reproducible and controllable induction voltage adder for scaled beam experiments

    Science.gov (United States)

    Sakai, Yasuo; Nakajima, Mitsuo; Horioka, Kazuhiko

    2016-08-01

    A reproducible and controllable induction adder was developed using solid-state switching devices and Finemet cores for scaled beam compression experiments. A gate controlled MOSFET circuit was developed for the controllable voltage driver. The MOSFET circuit drove the induction adder at low magnetization levels of the cores which enabled us to form reproducible modulation voltages with jitter less than 0.3 ns. Preliminary beam compression experiments indicated that the induction adder can improve the reproducibility of modulation voltages and advance the beam physics experiments.

  17. A Novel Modulation Function-Based Control of Modular Multilevel Converters for High Voltage Direct Current Transmission Systems

    Directory of Open Access Journals (Sweden)

    Majid Mehrasa

    2016-10-01

    Full Text Available In this paper, a novel modulation function-based method including analyses of the modulation index and phase is proposed for operation of modular multilevel converters (MMCs in high voltage direct current (HVDC transmission systems. The proposed modulation function-based control technique is developed based on thorough and precise analyses of all MMC voltages and currents in the a-b-c reference frame in which the alternating current (AC-side voltage is the first target to be obtained. Using the AC-side voltage, the combination of the MMC upper and lower arm voltages is achieved as the main structure of the proposed modulation function. The main contribution of this paper is to obtain two very simple new modulation functions to control MMC performance in different operating conditions. The features of the modulation function-based control technique are as follows: (1 this control technique is very simple and can be easily achieved in a-b-c reference frame without the need of using Park transformation; and (2 in addition, the inherent properties of the MMC model are considered in the proposed control technique. Considering these properties leads to constructing a control technique that is robust against MMC parameters changes and also is a very good tracking method for the components of MMC input currents. These features lead to improving the operation of MMC significantly, which can act as a rectifier in the HVDC structure. The simulation studies are conducted through MATLAB/SIMULINK software, and the results obtained verify the effectiveness of the proposed modulation function-based control technique.

  18. Opposing aminergic modulation of distinct spinal locomotor circuits and their functional coupling during amphibian metamorphosis.

    Science.gov (United States)

    Rauscent, Aude; Einum, James; Le Ray, Didier; Simmers, John; Combes, Denis

    2009-01-28

    The biogenic amines serotonin (5-HT) and noradrenaline (NA) are well known modulators of central pattern-generating networks responsible for vertebrate locomotion. Here we have explored monoaminergic modulation of the spinal circuits that generate two distinct modes of locomotion in the metamorphosing frog Xenopus laevis. At metamorphic climax when propulsion is achieved by undulatory larval tail movements and/or by kicking of the newly developed adult hindlimbs, the underlying motor networks remain spontaneously active in vitro, producing either separate fast axial and slow appendicular rhythms or a single combined rhythm that drives coordinated tail-based and limb-based swimming in vivo. In isolated spinal cords already expressing distinct axial and limb rhythms, bath-applied 5-HT induced coupled network activity through an opposite slowing of axial rhythmicity (by increasing motoneuron burst and cycle durations) and an acceleration of limb rhythmicity (by decreasing burst and cycle durations). In contrast, in preparations spontaneously expressing coordinated fictive locomotion, exogenous NA caused a dissociation of spinal activity into separate faster axial and slower appendicular rhythms by decreasing and increasing burst and cycle durations, respectively. Moreover, in preparations from premetamorphic and postmetamorphic animals that express exclusively axial-based or limb-based locomotion, 5-HT and NA modified the developmentally independent rhythms in a similar manner to the amines' opposing effects on the coexisting circuits at metamorphic climax. Thus, by exerting differential modulatory actions on one network that are opposite to their influences on a second adjacent circuit, these two amines are able to precisely regulate the functional relationship between different rhythmogenic networks in a developing vertebrate's spinal cord.

  19. Reconfigurable optical interleaver modules with tunable wavelength transfer matrix function using polymer photonics lightwave circuits.

    Science.gov (United States)

    Chen, Changming; Niu, Xiaoyan; Han, Chao; Shi, Zuosen; Wang, Xinbin; Sun, Xiaoqiang; Wang, Fei; Cui, Zhanchen; Zhang, Daming

    2014-08-25

    A transparent reconfigurable optical interleaver module composed of cascaded AWGs-based wavelength-channel-selector/interleaver monolithically integrated with multimode interference (MMI) variable optical attenuators (VOAs) and Mach-Zehnder interferometer (MZI) switch arrays was designed and fabricated using polymer photonic lightwave circuits. Highly fluorinated photopolymer and grafting modified organic-inorganic hybrid material were synthesized as the waveguide core and caldding, respectively. Thermo-optic (TO) tunable wavelength transfer matrix (WTM) function of the module can be achieved for optical routing network. The one-chip transmission loss is ~ 6 dB and crosstalk is less than ~25 dB for transverse-magnetic (TM) mode. The crosstalk and extinction ratio of the MMI VOAs were measured as -15.2 dB and 17.5 dB with driving current 8 mA, respectively. The modulation depth of the TO switches is obtained as ~18.2 dB with 2.2 V bias. Proposed novel interleaver module could be well suited for DWDM optical communication systems.

  20. Feeding status and serotonin rapidly and reversibly modulate a Caenorhabditis elegans chemosensory circuit

    Science.gov (United States)

    Chao, Michael Y.; Komatsu, Hidetoshi; Fukuto, Hana S.; Dionne, Heather M.; Hart, Anne C.

    2004-10-01

    Serotonin (5-HT) modulates synaptic efficacy in the nervous system of vertebrates and invertebrates. In the nematode Caenorhabditis elegans, many behaviors are regulated by 5-HT levels, which are in turn regulated by the presence or absence of food. Here, we show that both food and 5-HT signaling modulate chemosensory avoidance response of octanol in C. elegans, and that this modulation is both rapid and reversible. Sensitivity to octanol is decreased when animals are off food or when 5-HT levels are decreased; conversely, sensitivity is increased when animals are on food or have increased 5-HT signaling. Laser microsurgery and behavioral experiments reveal that sensory input from different subsets of octanol-sensing neurons is selectively used, depending on stimulus strength, feeding status, and 5-HT levels. 5-HT directly targets at least one pair of sensory neurons, and 5-HT signaling requires the G protein GPA-11. Glutamatergic signaling is required for response to octanol, and the GLR-1 glutamate receptor plays an important role in behavioral response off food but not on food. Our results demonstrate that 5-HT modulation of neuronal activity via G protein signaling underlies behavioral plasticity by rapidly altering the functional circuitry of a chemosensory circuit.

  1. High-speed and compact silicon modulator based on a racetrack resonator with a 1 V drive voltage.

    Science.gov (United States)

    Dong, Po; Liao, Shirong; Liang, Hong; Qian, Wei; Wang, Xin; Shafiiha, Roshanak; Feng, Dazeng; Li, Guoliang; Zheng, Xuezhe; Krishnamoorthy, Ashok V; Asghari, Mehdi

    2010-10-01

    Fast, compact, and power-efficient silicon microcavity electro-optic modulators are expected to be critical components for chip-level optical interconnects. It is highly desirable that these modulators can be driven by voltage swings of 1 V or less to reduce power dissipation and make them compatible with voltage supply levels associated with current and future complementary metal-oxide-semiconductor technology nodes. Here, we present a silicon racetrack resonator modulator that achieves over 8 dB modulation depth at 12.5 Gbps with a 1 V swing. In addition, the use of a racetrack resonator geometry relaxes the tight lithography resolution requirements typically associated with microring resonators and enhances the ability to use common lithographic optical techniques for their fabrication.

  2. Asymptotic and numerical prediction of current-voltage curves for an organic bilayer solar cell under varying illumination and comparison to the Shockley equivalent circuit

    KAUST Repository

    Foster, J. M.

    2013-01-01

    In this study, a drift-diffusion model is used to derive the current-voltage curves of an organic bilayer solar cell consisting of slabs of electron acceptor and electron donor materials sandwiched together between current collectors. A simplified version of the standard drift-diffusion equations is employed in which minority carrier densities are neglected. This is justified by the large disparities in electron affinity and ionisation potential between the two materials. The resulting equations are solved (via both asymptotic and numerical techniques) in conjunction with (i) Ohmic boundary conditions on the contacts and (ii) an internal boundary condition, imposed on the interface between the two materials, that accounts for charge pair generation (resulting from the dissociation of excitons) and charge pair recombination. Current-voltage curves are calculated from the solution to this model as a function of the strength of the solar charge generation. In the physically relevant power generating regime, it is shown that these current-voltage curves are well-approximated by a Shockley equivalent circuit model. Furthermore, since our drift-diffusion model is predictive, it can be used to directly calculate equivalent circuit parameters from the material parameters of the device. © 2013 AIP Publishing LLC.

  3. Adaptive Modulation for DFIG and STATCOM With High-Voltage Direct Current Transmission.

    Science.gov (United States)

    Tang, Yufei; He, Haibo; Ni, Zhen; Wen, Jinyu; Huang, Tingwen

    2016-08-01

    This paper develops an adaptive modulation approach for power system control based on the approximate/adaptive dynamic programming method, namely, the goal representation heuristic dynamic programming (GrHDP). In particular, we focus on the fault recovery problem of a doubly fed induction generator (DFIG)-based wind farm and a static synchronous compensator (STATCOM) with high-voltage direct current (HVDC) transmission. In this design, the online GrHDP-based controller provides three adaptive supplementary control signals to the DFIG controller, STATCOM controller, and HVDC rectifier controller, respectively. The mechanism is to observe the system states and their derivatives and then provides supplementary control to the plant according to the utility function. With the GrHDP design, the controller can adaptively develop an internal goal representation signal according to the observed power system states, therefore, to achieve more effective learning and modulating. Our control approach is validated on a wind power integrated benchmark system with two areas connected by HVDC transmission lines. Compared with the classical direct HDP and proportional integral control, our GrHDP approach demonstrates the improved transient stability under system faults. Moreover, experiments under different system operating conditions with signal transmission delays are also carried out to further verify the effectiveness and robustness of the proposed approach.

  4. Transient Recovery Voltages at the Main 132kV Line Bay GIS Circuit Breaker in a Windfarm

    DEFF Research Database (Denmark)

    Arana Aristi, Iván; Okholm, J.; Holbøll, Joachim

    2011-01-01

    parameters in the network was evaluated during a fault in the onshore substation. The rate of rise of recovery voltage (RRRV) and the maximum crest voltage (Uc) of the TRV across the GIS CB were compared against the standard values based on the type test results from the GIS. The investigations were...

  5. Assumption or Fact? Line-to-Neutral Voltage Expression in an Unbalanced 3-Phase Circuit during Inverter Switching

    Science.gov (United States)

    Masrur, M. A.

    2009-01-01

    This paper discusses the situation in a 3-phase motor or any other 3-phase system operating under unbalanced operating conditions caused by an open fault in an inverter switch. A dc voltage source is assumed as the input to the inverter, and under faulty conditions of the inverter switch, the actual voltage applied between the line to neutral…

  6. Self-commutated high-voltage direct current transmission with DC circuit breakers. Backbone for the energy policy turnaround; Selbstgefuehrte Hochspannungs-Gleichstromuebertragung mit DC-Leistungsschalter. Rueckgrat fuer die Energiewende

    Energy Technology Data Exchange (ETDEWEB)

    Goerner, Raphael [ABB AG, Mannheim (Germany). Marketing und Vertrieb, Geschaeftsbereich Grid Systems

    2013-06-01

    The 'current war' between direct current and alternating current is extended by a new location. In the future, both technologies work together in order to provide a reliable power transmission in Germany and long-term in Europe. This is based on the self-guided high-voltage direct current transmission. In conjunction with direct current circuit breakers (DC circuit breaker) the power circuit breakers may help to make the transmission grids more flexible and to minimize losses.

  7. Voltage-Balancing Method for Modular Multilevel Converters Under Phase-Shifted Carrier-Based Pulsewidth Modulation

    DEFF Research Database (Denmark)

    Deng, Fujin; Chen, Zhe

    2015-01-01

    The modular multilevel converter (MMC) becomes attractive for medium- or high-power applications because of the advantages of high modularity, availability, and power quality. One of the technical challenges associated with an MMC is the balancing of the capacitors' voltages. In this paper......, a voltage-balancing control method is proposed for the MMC under phase-shifted carrier-based pulsewidth modulation. The proposed voltage-balancing method uses the linearization method for pulse sorting without arm current measurement, which can control the capacitor charge transfer to balance the capacitor....../EMTDC are conducted, and a downscale MMC prototype is also tested with the proposed method. The study results show the effectiveness of the proposed voltage-balancing method....

  8. 基于TTL数字电路控制的高压脉冲源%High-voltage pulse source controlled by TTL digital circuit

    Institute of Scientific and Technical Information of China (English)

    李玺钦; 丁明军; 吴红光; 冯莉; 刘云涛; 戴文峰; 黄雷

    2012-01-01

    给出了一种基于TTL数字电路作为高压脉冲源触发控制单元的设计原理和方法.介绍了高压脉冲源的工作原理,设计了一台脉冲输出幅度5 kV、脉冲宽度大于200 μs及脉冲前沿小于30 ns的高压脉冲源.将触发控制单元和前级开关金属氧化物半导体场效应管(MOSFET)组合成一体,控制后级气体高压开关管放电输出高压脉冲信号.实验结果验证了所采用的设计原理及方法的可行性,给出了单次触发情况下的实验结果.%The paper introduces a TTL digital circuit, which is designed as the trigger control system of high power pulse source, and presents the development of a high-voltage pulse source. In the source, the TTL circuit operated after the optical isolation circuit and power driver, and outputs pulse signals to drive MOSFET, which controls the pulse signal output from high-voltage switch. The source can outputs pulses with voltage of 5 kV, pulse-width larger than 200 Ωs and fall-time less than 30 ns. Besides long-distance control and local control mode, it also includes inner trigger and external trigger (one electric signal and one optical signal as the trigger). A series of experiments have been conducted to validate the design, and the one-shot trigger results are presented.

  9. Bridge Circuits: One Topic in the Modular Course in Electronics Instrumentation.

    Science.gov (United States)

    Aldridge, Bill G.; Stringer, Gene A.

    This learning module is intended to illustrate the functioning and uses of bridge circuits. The discussion and laboratory procedures suggested in the module presume familiarity with basic concepts of electronics such as voltage, current, resistance, capacitance, inductance, phase, and knowledge of such skills as breadboarding circuits from…

  10. Inverted Fuel Cell: Room-Temperature Hydrogen Separation from an Exhaust Gas by Using a Commercial Short-Circuited PEM Fuel Cell without Applying any Electrical Voltage.

    Science.gov (United States)

    Friebe, Sebastian; Geppert, Benjamin; Caro, Jürgen

    2015-06-26

    A short-circuited PEM fuel cell with a Nafion membrane has been evaluated in the room-temperature separation of hydrogen from exhaust gas streams. The separated hydrogen can be recovered or consumed in an in situ olefin hydrogenation when the fuel cell is operated as catalytic membrane reactor. Without applying an outer electrical voltage, there is a continuous hydrogen flux from the higher to the lower hydrogen partial pressure side through the Nafion membrane. On the feed side of the Nafion membrane, hydrogen is catalytically split into protons and electrons by the Pt/C electrocatalyst. The protons diffuse through the Nafion membrane, the electrons follow the short-circuit between the two brass current collectors. On the cathode side, protons and electrons recombine, and hydrogen is released. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Retinal Waves Modulate an Intraretinal Circuit of Intrinsically Photosensitive Retinal Ganglion Cells.

    Science.gov (United States)

    Arroyo, David A; Kirkby, Lowry A; Feller, Marla B

    2016-06-29

    Before the maturation of rod and cone photoreceptors, the developing retina relies on light detection by intrinsically photosensitive retinal ganglion cells (ipRGCs) to drive early light-dependent behaviors. ipRGCs are output neurons of the retina; however, they also form functional microcircuits within the retina itself. Whether ipRGC microcircuits exist during development and whether they influence early light detection remain unknown. Here, we investigate the neural circuit that underlies the ipRGC-driven light response in developing mice. We use a combination of calcium imaging, tracer coupling, and electrophysiology experiments to show that ipRGCs form extensive gap junction networks that strongly contribute to the overall light response of the developing retina. Interestingly, we found that gap junction coupling was modulated by spontaneous retinal waves, such that acute blockade of waves dramatically increased the extent of coupling and hence increased the number of light-responsive neurons. Moreover, using an optical sensor, we found that this wave-dependent modulation of coupling is driven by dopamine that is phasically released by retinal waves. Our results demonstrate that ipRGCs form gap junction microcircuits during development that are modulated by retinal waves; these circuits determine the extent of the light response and thus potentially impact the processing of early visual information and light-dependent developmental functions. Light-dependent functions in early development are mediated by intrinsically photosensitive retinal ganglion cells (ipRGCs). Here we show that ipRGCs form an extensive gap junction network with other retinal neurons, including other ipRGCs, which shapes the retina's overall light response. Blocking cholinergic retinal waves, which are the primary source of neural activity before maturation of photoreceptors, increased the extent of ipRGC gap junction networks, thus increasing the number of light-responsive cells. We

  12. Voltage-dependent modulation of cardiac ryanodine receptors (RyR2 by protamine.

    Directory of Open Access Journals (Sweden)

    Paula L Diaz-Sylvester

    Full Text Available It has been reported that protamine (>10 microg/ml blocks single skeletal RyR1 channels and inhibits RyR1-mediated Ca2+ release from sarcoplasmic reticulum microsomes. We extended these studies to cardiac RyR2 reconstituted into planar lipid bilayers. We found that protamine (0.02-20 microg/ml added to the cytosolic surface of fully activated RyR2 affected channel activity in a voltage-dependent manner. At membrane voltage (V(m; SR lumen-cytosol = 0 mV, protamine induced conductance transitions to several intermediate states (substates as well as full block of RyR2. At V(m>10 mV, the substate with the highest level of conductance was predominant. Increasing V(m from 0 to +80 mV, decreased the number of transitions and residence of the channel in this substate. The drop in current amplitude (full opening to substate had the same magnitude at 0 and +80 mV despite the approximately 3-fold increase in amplitude of the full opening. This is more similar to rectification of channel conductance induced by other polycations than to the action of selective conductance modifiers (ryanoids, imperatoxin. A distinctive effect of protamine (which might be shared with polylysines and histones but not with non-peptidic polycations is the activation of RyR2 in the presence of nanomolar cytosolic Ca2+ and millimolar Mg2+ levels. Our results suggest that RyRs would be subject to dual modulation (activation and block by polycationic domains of neighboring proteins via electrostatic interactions. Understanding these interactions could be important as such anomalies may be associated with the increased RyR2-mediated Ca2+ leak observed in cardiac diseases.

  13. LTPS-TFT Pixel Circuit Compensating for TFT Threshold Voltage Shift and IR-Drop on the Power Line for AMOLED Displays

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2012-01-01

    Full Text Available We propose a new pixel design for the active matrix organic light-emitting diode (AMOLED using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs. The proposed pixel is composed of four switching TFTs, one driving TFT (DTFT, and one capacitor. The simulation results are performed by AIM-SPICE software. The error rate of OLED output current with (threshold voltage variation (0.3 V and power line drop by 1 V are improved to about 1.67% and 15%, respectively. Thus, the proposed pixel circuit can successfully overcome drawbacks suffered from DTFT threshold voltage deviation and IR-drop on power line.

  14. Sex differences in behavioral decision-making and the modulation of shared neural circuits

    Directory of Open Access Journals (Sweden)

    Mowrey William R

    2012-03-01

    Full Text Available Abstract Animals prioritize behaviors according to their physiological needs and reproductive goals, selecting a single behavioral strategy from a repertoire of possible responses to any given stimulus. Biological sex influences this decision-making process in significant ways, differentiating the responses animals choose when faced with stimuli ranging from food to conspecifics. We review here recent work in invertebrate models, including C. elegans, Drosophila, and a variety of insects, mollusks and crustaceans, that has begun to offer intriguing insights into the neural mechanisms underlying the sexual modulation of behavioral decision-making. These findings show that an animal's sex can modulate neural function in surprisingly diverse ways, much like internal physiological variables such as hunger or thirst. In the context of homeostatic behaviors such as feeding, an animal's sex and nutritional status may converge on a common physiological mechanism, the functional modulation of shared sensory circuitry, to influence decision-making. Similarly, considerable evidence suggests that decisions on whether to mate or fight with conspecifics are also mediated through sex-specific neuromodulatory control of nominally shared neural circuits. This work offers a new perspective on how sex differences in behavior emerge, in which the regulated function of shared neural circuitry plays a crucial role. Emerging evidence from vertebrates indicates that this paradigm is likely to extend to more complex nervous systems as well. As men and women differ in their susceptibility to a variety of neuropsychiatric disorders affecting shared behaviors, these findings may ultimately have important implications for human health.

  15. Towards a high open-circuit voltage by co-additives in electrolyte for high-efficiency dye-sensitized solar cells

    Science.gov (United States)

    Sun, Xun; Li, Yafeng; Mao, Haijuan; Dou, Jie; Wei, Mingdeng

    2017-08-01

    The co-additives of benzimidazole and 2-ethylimidazole in electrolyte have an obvious effect on the performance of dye-sensitized solar cells due to their good coordination ability of titanium dioxide, which could affect the energy levels and charge transfer process. Through a balance of the concentrations, the best efficiency of 7.93% with a high open-circuit voltage of 0.817 V is achieved for a cell fabricated with the electrolyte contains benzimidazole and 2-ehtylimidazole by a molar ratio of 9.5/0.5.

  16. A New Opamp-less CMOS Bandgap Voltage Reference Circuit%一种新型无运放CMOS带隙基准电路

    Institute of Scientific and Technical Information of China (English)

    冯树; 王永禄; 张跃龙

    2012-01-01

    Theory of bandgap reference voltage and conventional bandgap reference circuits were presented, and a novel bandgap reference circuit without op-amp was designed. In the circuit, MOS current mirrors and negative feedback clamping technique were used to avoid the use of operational amplifier, thus eliminating effects of offset and power supply rejection ratio (PSRR) of the operational amplifier on accuracy of bandgap voltage reference. Based on 0. 18 μm standard CMOS process, the circuit was simulated using Spectre of Cadence. Simulation results showed that the bandgap voltage reference circuit had a temperature coefficient of 6. 73 ×10-6/℃ in the temperature range from -40 °C to 125 ℃, and a PSRR of 54. 8 dB, and it consumed 0. 25 mW of power from 2. 5 V supply.%介绍了带隙基准原理和常规的带隙基准电路,设计了一种新型无运放带隙基准电路.该电路利用MOS电流镜和负反馈箝位技术,避免了运放的使用,从而消除了运放带隙基准电路中运放的失调电压和电源抑制比等对基准源精度的影响.该新型电路比传统无运放带隙基准电路具有更高的精度和电源抑制比.基于0.18μm标准CMOS工艺,在Cadence Spectre环境下仿真.采用2.5V电源电压,在-40℃~125℃温度范围的温度系数为6.73×10-6/℃,电源抑制比为54.8dB,功耗仅有0.25 mW.

  17. Noise tolerance in optical waveguide circuits for recognition of optical 16 quadrature amplitude modulation codes

    Science.gov (United States)

    Inoshita, Kensuke; Hama, Yoshimitsu; Kishikawa, Hiroki; Goto, Nobuo

    2016-12-01

    In photonic label routers, various optical signal processing functions are required; these include optical label extraction, recognition of the label, optical switching and buffering controlled by signals based on the label information and network routing tables, and label rewriting. Among these functions, we focus on photonic label recognition. We have proposed two kinds of optical waveguide circuits to recognize 16 quadrature amplitude modulation codes, i.e., recognition from the minimum output port and from the maximum output port. The recognition function was theoretically analyzed and numerically simulated by finite-difference beam-propagation method. We discuss noise tolerance in the circuit and show numerically simulated results to evaluate bit-error-rate (BER) characteristics against optical signal-to-noise ratio (OSNR). The OSNR required to obtain a BER less than 1.0×10-3 for the symbol rate of 2.5 GBaud was 14.5 and 27.0 dB for recognition from the minimum and maximum output, respectively.

  18. PDF-1 neuropeptide signaling modulates a neural circuit for mate-searching behavior in C. elegans.

    Science.gov (United States)

    Barrios, Arantza; Ghosh, Rajarshi; Fang, Chunhui; Emmons, Scott W; Barr, Maureen M

    2012-12-01

    Appetitive behaviors require complex decision making that involves the integration of environmental stimuli and physiological needs. C. elegans mate searching is a male-specific exploratory behavior regulated by two competing needs: food and reproductive appetite. We found that the pigment dispersing factor receptor (PDFR-1) modulates the circuit that encodes the male reproductive drive that promotes male exploration following mate deprivation. PDFR-1 and its ligand, PDF-1, stimulated mate searching in the male, but not in the hermaphrodite. pdf-1 was required in the gender-shared interneuron AIM, and the receptor acted in internal and external environment-sensing neurons of the shared nervous system (URY, PQR and PHA) to produce mate-searching behavior. Thus, the pdf-1 and pdfr-1 pathway functions in non-sex-specific neurons to produce a male-specific, goal-oriented exploratory behavior. Our results indicate that secretin neuropeptidergic signaling is involved in regulating motivational internal states.

  19. Design of drive circuit of laser diode

    Science.gov (United States)

    Ran, Yingying; Huang, Xuegong; Xu, Xiaobin

    2016-10-01

    Aiming at the difficult problem of high precision frequency stabilization of semiconductor laser diode, the laser frequency control is realized through the design of the semiconductor drive system. Above all, the relationship between the emission frequency and the temperature of LD is derived theoretically. Then the temperature corresponding to the stable frequency is obtained. According to the desired temperature stability of LD, temperature control system is designed, which is composed of a temperature setting circuit, temperature gathering circuit, the temperature display circuit, analog PID control circuit and a semiconductor refrigerator control circuit module. By sampling technology, voltage of platinum resistance is acquired, and the converted temperature is display on liquid crystal display. PID analog control circuit controls speed stability and precision of temperature control. The constant current source circuit is designed to provide the reference voltage by a voltage stabilizing chip, which is buffered by an operational amplifier. It is connected with the MOSFET to drive the semiconductor laser to provide stable current for the semiconductor laser. PCB circuit board was finished and the experimental was justified. The experimental results show that: the design of the temperature control system could achieve the goal of temperature monitoring. Meanwhile, temperature can be stabilized at 40°C +/- 0.1°C. The output voltage of the constant current source is 2 V. The current is 35 mA.

  20. Study of Voltage-sharing Circuit for Thyristor Series and Its Design%晶闸管串联均压电路设计与仿真研究

    Institute of Scientific and Technical Information of China (English)

    郭鹏; 王宏华; 冯进通; 尹祥顺; 李军民

    2015-01-01

    晶闸管串联式高压异步电动机软启动器应用前景广阔,晶闸管串联均压是其关键技术之一。对晶闸管串联均压电路进行了研究与设计,仿真分析了均压电路参数选取对均压效果的影响。仿真表明:采用动、静态均压电路可有效抑制开通和关断过程中晶闸管串联分压不均,对均压电路参数优化设计具有重要作用。%The high-voltage asynchronous motor soft starter is widely used in thyristor series. One of its key techniques is the volt-age-sharing of thyristor series. This paper researches on and designs the voltage-sharing circuit for thyristor series, and analyzes and simulates the relationship between voltage-sharing circuit parameters and voltage-sharing effect. The simulation results show that thyristor series voltage-sharing inequality in the process of conducting and turning off is effectively suppressed in the dynamic and static voltage-sharing circuit. The optimization of voltage-sharing circuit parameters plays an important role.

  1. Design of rudder control circuit based on IPM module%基于IPM模块的舵机控制电路设计

    Institute of Scientific and Technical Information of China (English)

    徐良波

    2012-01-01

    In order to achieve the control of the underwater autonomous robot, the rudder control circuit based on IPM module was designed. The DC bias voltage signal acquired by comparing the rudder control signal with the rudder position signal is taken as the input signal of the PWM chip UC1637, which output PWM signal with the different duty cycle to drive the turn-on/turn-off action of the IGBTs inside the IPM module according to the variation of the DC bias voltage signal. The rudder control function is realized eventually. The UC1637 and the IPM module are adopted in the circuit for the rudder control, which has the advantages of low cost and easy implementation. Experiments show that the circuit has the characteristics of high control accuracy and stable operation. Therefore, it is very worthy to be promoted.%为了实现水下自主式机器人的控制,设计了一种基于IPM模块的舵机控制电路.该电路将舵机控制信号与舵机位置反馈信号比较获得的直流偏置电压信号作为脉宽调制芯片UC1637的输入信号.UC1637根据输入直流偏置电压信号的变化输出不同占空比的PWM信号驱动IPM模块内部不同IGBT的通断,从而实现舵机的控制.该电路将IPM模块和脉宽调制芯片UC1637用于舵机控制,使该电路具有成本低廉和容易实现的优点.实验结果表明,该控制电路运行稳定,控制精度高,有很强的应用推广价值.

  2. Stable single-mode operation of injection-seeded Q-switched Nd:YAG laser by sine voltage modulation

    Institute of Scientific and Technical Information of China (English)

    Yongfei Gao; Junxuan Zhang; Huaguo Zang; Xiaolei Zhu; Yingjie Yu; Weibiao Chen

    2016-01-01

    Based on the modified ramp and fire technique,a novel injection seeding approach with real-time resonance tracking is successfully demonstrated in a single-frequency Nd:YAG pulsed laser.Appling a high-frequency sinusoidal modulation voltage to one piezo actuator and an adjustable DC voltage to another piezo actuator for active feedback,single-mode laser output with high-frequency stability is obtained,and the effect of the piezo hysteresis on the frequency stability can be eliminated for a laser diode pumped Q-switched Nd:YAG laser at a repetition rate of 400 Hz.

  3. A current-excited triple-time-voltage oversampling method for bio-impedance model for cost-efficient circuit system.

    Science.gov (United States)

    Yan Hong; Yong Wang; Wang Ling Goh; Yuan Gao; Lei Yao

    2015-08-01

    This paper presents a mathematic method and a cost-efficient circuit to measure the value of each component of the bio-impedance model at electrode-electrolyte interface. The proposed current excited triple-time-voltage oversampling (TTVO) method deduces the component values by solving triple simultaneous electric equation (TSEE) at different time nodes during a current excitation, which are the voltage functions of time. The proposed triple simultaneous electric equations (TSEEs) allows random selections of the time nodes, hence numerous solutions can be obtained during a single current excitation. Following that, the oversampling approach is engaged by averaging all solutions of multiple TSEEs acquired after a single current excitation, which increases the practical measurement accuracy through the improvement of the signal-to-noise ratio (SNR). In addition, a print circuit board (PCB) that consists a switched current exciter and an analog-to-digital converter (ADC) is designed for signal acquisition. This presents a great cost reduction when compared against other instrument-based measurement data reported [1]. Through testing, the measured values of this work is proven to be in superb agreements on the true component values of the electrode-electrolyte interface model. This work is most suited and also useful for biological and biomedical applications, to perform tasks such as stimulations, recordings, impedance characterizations, etc.

  4. Circuit mismatch and current coupling effect influence on paralleling SiC MOSFETs in multichip power modules

    DEFF Research Database (Denmark)

    Li, Helong; Beczkowski, Szymon; Munk-Nielsen, Stig

    2015-01-01

    This paper reveals that there are circuit mismatches and a current coupling effect in the direct bonded copper (DBC) layout of a silicon carbide (SiC) MOSFET multichip power module. According to the modelling and the mathematic analysis of the DBC layout, the mismatch of the common source stray i...

  5. SEMICONDUCTOR INTEGRATED CIRCUITS: A full on-chip CMOS low-dropout voltage regulator with VCCS compensation

    Science.gov (United States)

    Leisheng, Gao; Yumei, Zhou; Bin, Wu; Jianhua, Jiang

    2010-08-01

    A full on-chip CMOS low-dropout (LDO) voltage regulator with high PSR is presented. Instead of relying on the zero generated by the load capacitor and its equivalent series resistance, the proposed LDO generates a zero by voltage-controlled current sources for stability. The compensating capacitor for the proposed scheme is only 0.18 pF, which is much smaller than the capacitor of the conventional compensation scheme. The full on-chip LDO was fabricated in commercial 0.35 μm CMOS technology. The active chip area of the LDO (including the bandgap voltage reference) is 400 × 270 μm2. Experimental results show that the PSR of the LDO is -58.7 dB at a frequency of 10 Hz and -20 dB at a frequency of 1 MHz. The proposed LDO is capable of sourcing an output current up to 50 mA.

  6. Voltage Regulators for Photovoltaic Systems

    Science.gov (United States)

    Delombard, R.

    1986-01-01

    Two simple circuits developed to provide voltage regulation for highvoltage (i.e., is greater than 75 volts) and low-voltage (i.e., is less than 36 volts) photovoltaic/battery power systems. Use of these circuits results in voltage regulator small, low-cost, and reliable, with very low power dissipation. Simple oscillator circuit controls photovoltaic-array current to regulate system voltage and control battery charging. Circuit senses battery (and system) voltage and adjusts array current to keep battery voltage from exceeding maximum voltage.

  7. Solenoid-Simulation Circuit

    Science.gov (United States)

    Simon, R. A.

    1986-01-01

    Electrical properties of solenoids imitated for tests of control circuits. Simulation circuit imitates voltage and current responses of two engine-controlling solenoids. Used in tests of programs of digital engine-control circuits, also provides electronic interface with circuits imitating electrical properties of pressure sensors and linear variable-differential transformers. Produces voltages, currents, delays, and discrete turnon and turnoff signals representing operation of solenoid in engine-control relay. Many such circuits used simulating overall engine circuitry.

  8. Development of a New Cascade Voltage-Doubler for Voltage Multiplication

    OpenAIRE

    Arash Toudeshki; Norman Mariun; Hashim Hizam; Noor Izzri Abdul Wahab

    2014-01-01

    For more than eight decades, cascade voltage-doubler circuits are used as a method to produce DC output voltage higher than the input voltage. In this paper, the topological developments of cascade voltage-doublers are reviewed. A new circuit configuration for cascade voltage-doubler is presented. This circuit can produce a higher value of the DC output voltage and better output quality compared to the conventional cascade voltage-doubler circuits, with the same number of stages.

  9. Switching Arithmetic for DC to DC Converters Using Delta Sigma Modulator Based Control Circuit

    Directory of Open Access Journals (Sweden)

    K.Diwakar

    2016-02-01

    Full Text Available In the proposed arithmetic unit for dc to dc converters using delta sigma modulator, a new technique is proposed for addition and multiplication of sampled analog signals. The output is in digital form to drive the converters. The conventional method has input signal limitation whereas in the proposed method the inputs can vary to full-scale. The addition of two discrete signals is done by sampling the two signals at a period called update period and feeding each signal to the input of signal dependant delta sigma modulator for half of the update period and combining the outputs for the update period. The extension of three discrete data addition can be carried out by using the same technique. For the multiplication of two discrete signals different method is adopted. One analog signal is fed to the input of first delta-sigma modulator (DSM1 after sampling. The sampled output of the second analog signal is negated or not negated depending on the bit state at the output of DSM1 and is fed to the input of second DSM(DSM2. The resulting bit stream at the output of DSM2 is the digital representation of the product of the sampled data of the two analog signals. In order to multiply three discrete data, the sampled output of third data is negated or not negated depending on the bit state at the output of DSM2 and is fed to the input of third DSM(DSM3. The resulting bit stream at the output of DSM3 is the digital representation of the product of the sampled data of the three analog signals. Using the proposed adder and multiplier circuits any expressions can be evaluated such that the average value of the digital output of the arithmetic unit over the update period gives the value of expressions during that period. The digital output of the arithmetic unit is used to drive the dc-dc converters.

  10. Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS-compatible integration.

    Science.gov (United States)

    Ding, Jianfeng; Chen, Hongtao; Yang, Lin; Zhang, Lei; Ji, Ruiqiang; Tian, Yonghui; Zhu, Weiwei; Lu, Yangyang; Zhou, Ping; Min, Rui

    2012-01-30

    We demonstrate a carrier-depletion Mach-Zehnder silicon optical modulator, which is compatible with CMOS fabrication process and works well at a low driving voltage. This is achieved by the optimization of the coplanar waveguide electrode to reduce the electrical signal transmission loss. At the same time, the velocity and impedance matching are both considered. The 12.5 Gbit/s data transmission experiment of the fabricated device with a 2-mm-long phase shifter is performed. The driving voltages with the swing amplitudes of 1 V and 2 V and the reverse bias voltages of 0.5 V and 0.8 V are applied to the device, respectively. The corresponding extinction ratios are 7.67 and 12.79 dB.

  11. Determination of economically justified parameters of synchronous disconnection at low-voltage circuit switching via a synchronous vacuum contactor

    Directory of Open Access Journals (Sweden)

    A.V. Verkhola

    2014-04-01

    Full Text Available Dependence of a single switching procedure cost upon the contact opening delay time and delay-time spread is derived for a low-voltage synchronous vacuum contactor. For different cost levels, boundaries of permissible values of delay-time and delay-time spread are specified.

  12. Control of a Two-Stage Direct Power Converter with a Single Voltage Sensor Mounted in the Intermediary Circuit

    DEFF Research Database (Denmark)

    Klumpner, Christian; Wheeler, P.; Blaabjerg, Frede

    2004-01-01

    Controlling a converter requires not only a powerful processors but also accurate voltage and current sensors and fast and precise analogue-digital converters, which increase the cost per kW of the assembly, especially in the low power range. A matrix converter requires less transducers than a ba...

  13. 压控电压源二阶低通有源滤波电路设计与仿真%Design and simulation of two-order voltage source low pass active filter circuit controlled by voltage

    Institute of Scientific and Technical Information of China (English)

    侯卫周; 谷城

    2014-01-01

    利用M ultisim10.1软件对压控电压源二阶低通滤波器进行仿真分析,通过选择不同信号源观察输入、输出波形的相位关系和幅值关系,比较输出、输入波形幅值比是否等于通带电压放大倍数;调节负反馈电阻大小,观察品质因素变化对滤波器幅频特性和相频特性的影响,得到的仿真的结果与实际理论分析基本一致。仿真结果表明,将M ultisim10.1合理地引入到模拟电子线路实验教学中,能将一些高深、抽象的电子电路的理论教学变得具体和生动,有利于学生对电路的认知,提高电子线路理论课的教学效果和教学质量。%The two-order low pass active filter circuit of voltage controlled voltage source has been analyzed and simulated by Multisim10 .1 software ,observed the phase-frequency and amplitude-frequency of output and input waveform via choosing different signal sources ,the output and input waveform amplitude ratio compared is equal to the pass band voltage amplification or not ;when by adjusting negative feedback resistance ,the influence of phase-frequency and amplitude-frequency characteristics as quality factors changing can be observed .The simulation results are consistent with the practical theory .It shows that reasonably introducing Multisim10 .1 simulation technology could make some abstract and advanced theoretical teaching become concretely and lively ,thus it is suitable for cultivating students’ cognitive view of circuit ,further can improve teaching effect and teaching quality of the Electronic Circuit Theory couse .

  14. Auto bias control and bias hold circuit for IQ-modulator in flexible optical QAM transmitter with Nyquist filtering.

    Science.gov (United States)

    Kawakami, Hiroto; Kobayashi, Takayuki; Yoshida, Mitsuteru; Kataoka, Tomoyoshi; Miyamoto, Yutaka

    2014-11-17

    An Auto Bias Control (ABC) technique for the IQ-modulator of a flexible optical QAM transmitter is described. This technique can support various optical QAM signal formats with Nyquist filtering and electronic dispersion pre-compensation. 16, 32 and 64-QAM signals (21 Gbaud) are successfully generated, and all bias voltages are held to their optimum value even when signal format is changed.

  15. Ultra-thin and low-power optical interconnect module based on a flexible optical printed circuit board

    Science.gov (United States)

    Hwang, Sung Hwan; Lee, Woo-Jin; Kim, Myoung Jin; Jung, Eun Joo; Kim, Gye Won; An, Jong Bae; Jung, Ki Young; Cha, Kyung Soon; Rho, Byung Sup

    2012-07-01

    We describe an ultra-thin and low-power optical interconnect module for mobile electronic devices such as mobile phones and notebooks. The module was fabricated by directly packaging optic and electronic components onto a thin and flexible optical printed circuit board having a size of 70×8×0.25 mm. The completed active module has features of thinness (0.5 mm), small size (7×5 mm), very low total power consumption (15.88 mW), and high data rate transmissions (2.5 Gbps).

  16. Dual-function photonic integrated circuit for frequency octo-tupling or single-side-band modulation.

    Science.gov (United States)

    Hasan, Mehedi; Maldonado-Basilio, Ramón; Hall, Trevor J

    2015-06-01

    A dual-function photonic integrated circuit for microwave photonic applications is proposed. The circuit consists of four linear electro-optic phase modulators connected optically in parallel within a generalized Mach-Zehnder interferometer architecture. The photonic circuit is arranged to have two separate output ports. A first port provides frequency up-conversion of a microwave signal from the electrical to the optical domain; equivalently single-side-band modulation. A second port provides tunable millimeter wave carriers by frequency octo-tupling of an appropriate amplitude RF carrier. The circuit exploits the intrinsic relative phases between the ports of multi-mode interference couplers to provide substantially all the static optical phases needed. The operation of the proposed dual-function photonic integrated circuit is verified by computer simulations. The performance of the frequency octo-tupling and up-conversion functions is analyzed in terms of the electrical signal to harmonic distortion ratio and the optical single side band to unwanted harmonics ratio, respectively.

  17. Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm.

    Science.gov (United States)

    Dumas, D C S; Gallacher, K; Rhead, S; Myronov, M; Leadley, D R; Paul, D J

    2014-08-11

    Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulation covering 1460 to 1560 nm wavelength has been demonstrated using Ge/SiGe quantum confined Stark effect (QCSE) diodes grown on a silicon substrate. The heterolayers for the devices were designed using an 8-band k.p Poisson-Schrödinger solver which demonstrated excellent agreement with the experimental results. Modelling and experimental results demonstrate that by changing the quantum well width of the device, low power Ge/SiGe QCSE modulators can be designed to cover the S- and C-telecommunications bands.

  18. Protection of transformers and low voltage secondary circuits; Protecao de transformadores e circuitos secundarios em baixa tensao

    Energy Technology Data Exchange (ETDEWEB)

    Bueno, Alexandre Francisco Maia; Bouissou, Jean Jacques [Companhia Energetica de Minas Gerais (CEMIG), Belo Horizonte, MG (Brazil)

    1994-12-31

    This work discusses two themes related to equipment and circuit protection, both of which are components of overhead electric power transmission networks. Two CEMIG`s, the electric power company of Minas Gerais State - Southeast Brazil, experiences are presented. The work also discusses the technical reliability of these two protection conceptions. The results obtained results are also presented and discussed 3 refs., 3 figs., 2 tabs.

  19. Comparative study of SVPWM (space vector pulse width modulation) & SPWM (sinusoidal pulse width modulation) based three phase voltage source inverters for variable speed drive

    Science.gov (United States)

    Ahmed, Waheed; Usman Ali, Syed M.

    2013-12-01

    We have performed comparative studies of Space Vector Pulse Width Modulation (SVPWM) and Sinusoidal Pulse Width Modulation (SPWM) techniques utilizing MATLAB tools. During these investigations, we carried out intensive simulations, comprehensively analyzed the obtained results and compared the harmonic density, power factor (PF), & switching losses of SVPWM and SPWM. It has been observed during investigations that if the switching frequency is high then losses due to harmonics are negligible, thus based on obtained results we suggested that the SVPWM technique is a more reliable solution. Because SVPWM utilizes DC bus voltage more efficiently, generates less Total Harmonic Distortion (THD) and has higher output quality it provides flexible control of output voltage and output frequency for Variable Speed Drive (VSD).

  20. Low-voltage polymer/small-molecule blend organic thin-film transistors and circuits fabricated via spray deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hunter, By Simon; Anthopoulos, Thomas D., E-mail: t.anthopoulos@ic.ac.uk [Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington SW7 2AZ (United Kingdom); Ward, Jeremy W.; Jurchescu, Oana D. [Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109 (United States); Payne, Marcia M.; Anthony, John E. [Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506 (United States)

    2015-06-01

    Organic thin-film electronics have long been considered an enticing candidate in achieving high-throughput manufacturing of low-power ubiquitous electronics. However, to achieve this goal, more work is required to reduce operating voltages and develop suitable mass-manufacture techniques. Here, we demonstrate low-voltage spray-cast organic thin-film transistors based on a semiconductor blend of 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene and poly(triarylamine). Both semiconductor and dielectric films are deposited via successive spray deposition in ambient conditions (air with 40%–60% relative humidity) without any special precautions. Despite the simplicity of the deposition method, p-channel transistors with hole mobilities of >1 cm{sup 2}/Vs are realized at −4 V operation, and unipolar inverters operating at −6 V are demonstrated.

  1. Pulse-Density Modulation with an Ensemble of Single-Electron Circuits Employing Neuronal Heterogeneity to Achieve High Temporal Resolution

    Science.gov (United States)

    Kikombo, Andrew Kilinga; Asai, Tetsuya; Amemiya, Yoshihito

    We investigated the implications of static noises in a pulse-density modulator based on Vestibulo-ocular Reflex model. We constructed a simple neuromorphic circuit consisting of an ensemble of single-electron devices and confirmed that static noises (heterogeneity in circuit parameters) introduced into the network indeed played an important role in improving the fidelity with which neurons could encode signals whose input frequencies are higher than the intrinsic response frequencies of single neurons. Through Monte-Carlo based computer simulations, we demonstrated that the heterogeneous network could corectly encode signals with input frequencies as high as 1 GHz, twice the range for single (or a network of homogeneous) neurons.

  2. Operation of High-Voltage Transverse Shock Wave Ferromagnetic Generator in the Open Circuit and Charging Modes

    Science.gov (United States)

    2005-06-01

    FMGs are based on the transverse (when the shock wave propagates across the magnetization vector M) shock demagnetization of Nd2Fe14B hard...generators based on the transverse (when the shock wave propagates across the magnetization vector M) shock wave demagnetization of Nd2Fe14B hard...and photo of a high-voltage transverse FMG are shown in Fig. 1. It contains a hollow hard ferromagnetic cylindrical Nd2Fe14B energy-carrying

  3. Commutation circuit for an HVDC circuit breaker

    Science.gov (United States)

    Premerlani, William J.

    1981-01-01

    A commutation circuit for a high voltage DC circuit breaker incorporates a resistor capacitor combination and a charging circuit connected to the main breaker, such that a commutating capacitor is discharged in opposition to the load current to force the current in an arc after breaker opening to zero to facilitate arc interruption. In a particular embodiment, a normally open commutating circuit is connected across the contacts of a main DC circuit breaker to absorb the inductive system energy trapped by breaker opening and to limit recovery voltages to a level tolerable by the commutating circuit components.

  4. A new method for compensation of the effect of charging transformer's leakage inductance on PFN voltage regulation in Klystron pulse modulators

    Science.gov (United States)

    Patel, Akhil; Kale, Umesh; Shrivastava, Purushottam

    2017-04-01

    The Line type modulators have been widely used to generate high voltage rectangular pulses to power the klystron for high power RF generation. In Line type modulator, the Pulse Forming Network (PFN) which is a cascade combination of lumped capacitors and inductors is used to store the electrical energy. The charged PFN is then discharged into a klystron by firing a high voltage Thyratron switch. This discharge generates a high voltage rectangular pulse across the klystron electrodes. The amplitude and phase of Klystron's RF output is governed by the high voltage pulse amplitude. The undesired RF amplitude and phase stability issues arises at the klystron's output due to inter-pulse and during the pulse amplitude variations. To reduce inter-pulse voltage variations, the PFN is required to be charged at the same voltage after every discharge cycle. At present, the combination of widely used resonant charging and deQing method is used to regulate the pulse to pulse PFN voltage variations but the charging transformer's leakage inductance puts an upper bound on the regulation achievable by this method. Here we have developed few insights of the deQing process and devised a new compensation method to compensate this undesired effect of charging transformer's leakage inductance on the pulse to pulse PFN voltage stability. This compensation is accomplished by the controlled partial discharging of the split PFN capacitor using a low voltage MOSFET switch. Theoretically, very high values of pulse to pulse voltage stability may be achieved using this method. This method may be used in deQing based existing modulators or in new modulators, to increase the pulse to pulse voltage stability, without having a very tight bound on charging transformer's leakage inductance. Given a stable charging power supply, this method may be used to further enhance the inter-pulse voltage stability of modulators which employ the direct charging, after replacing the direct charging with the

  5. Design of CMOS bandgap voltage reference circuit with high PSR%一种高PSR CMOS带隙基准电路设计

    Institute of Scientific and Technical Information of China (English)

    贺志伟; 姜岩峰

    2014-01-01

    为了降低芯片电路功耗,电源电压需要不断的减小,这将导致电源噪声对基准电压产生严重影响。为此针对这一问题进行相关研究,采用SMIC 0.18μm工艺,设计出一种低功耗、低温度系数的高PSR带隙基准电压源。仿真结果表明,该设计带隙基准源的PSR在50 kHz与100 kHz分别为-65.13 dB和-53.85 dB;在2~6 V电源电压下,工作电流为30μA,温度系数为30.38 ppm/℃,电压调整率为71.47μV/V。该带隙基准适用于在低功耗高PSR性能需求的LDOs电路中应用。%The power supply voltage needs to be constantly decreased to meet the requirement of reducing the low-power consumption of IC,but it may lead to the negative impact of power supply noise on the reference voltage. A low-power consump-tion bandgap voltage reference with high PSR (power supply rejection) and low-temperature coefficent was design based on in SMIC0.18μm process. The simulation results show that the PSR of the bandgap reference source is -65.13 dB at 50 kHz and -53.85 dB at 100 kHz respectively;at 2~6 V supply voltage,the supply current is 30 μA,the temperature coefficient is 30.38 ppm/℃,and the voltage regulation rate is 71.47 μV/V. The bandgap voltage reference is suitable for LDOs circuit which has the requirements of low-power consumption and high PSR.

  6. A voltage-controlled silver nanograting device for dynamic modulation of transmitted light based on the surface plasmon polariton effect

    Science.gov (United States)

    Wang, Hailong; Li, Haibo; Wang, Yi; Xu, Shuping; Xu, Weiqing

    2016-02-01

    An active-controlled plasmonic device is designed and fabricated based on the index-sensitive properties of surface plasmon polaritons (SPPs). We utilize a one-dimensional silver nanograting with a period of 320 nm overlayered with a liquid crystal (LC) layer (50 μm in thickness), to transmit selectively the surface plasmon resonance (SPR) wavelength. This device realizes the active, reversible and continuous control of the transmitted light wavelength by modulating the external voltage signal applied to the LC layer. This voltage-controlled plasmonic filter has a dynamic wavelength modulation range of 17 nm, a fast respond speed of 4.24 ms and a low driving voltage of 1.06 V μm-1. This study opens up a unique way for the design of tunable nanophotonic devices, such as a micro light sources and switches.An active-controlled plasmonic device is designed and fabricated based on the index-sensitive properties of surface plasmon polaritons (SPPs). We utilize a one-dimensional silver nanograting with a period of 320 nm overlayered with a liquid crystal (LC) layer (50 μm in thickness), to transmit selectively the surface plasmon resonance (SPR) wavelength. This device realizes the active, reversible and continuous control of the transmitted light wavelength by modulating the external voltage signal applied to the LC layer. This voltage-controlled plasmonic filter has a dynamic wavelength modulation range of 17 nm, a fast respond speed of 4.24 ms and a low driving voltage of 1.06 V μm-1. This study opens up a unique way for the design of tunable nanophotonic devices, such as a micro light sources and switches. Electronic supplementary information (ESI) available: (1) The general theory of the VCP filter; (2) RI sensitivity; (3) the thickness optimization of the Ag grating sandwiched by photoresist layers; (4) image system; (5) detection systems for transmission and reflection spectra; (6) detection system for the response time of the VCP filter. See DOI: 10.1039/c5nr

  7. Modulation of epidermal transcription circuits in psoriasis: new links between inflammation and hyperproliferation.

    Directory of Open Access Journals (Sweden)

    William R Swindell

    Full Text Available BACKGROUND: Whole-genome expression profiling has been used to characterize molecular-level differences between psoriasis lesions and normal skin. Pathway analysis, however, is complicated by the fact that expression profiles have been derived from bulk skin biopsies with RNA derived from multiple cell types. RESULTS: We analyzed gene expression across a large sample of psoriatic (PP and uninvolved/normal (PN skin biopsies (n = 215 patients. We identified 1975 differentially expressed genes, including 8 associated with psoriasis susceptibility loci. To facilitate pathway analysis, PP versus PN differences in gene expression were analyzed with respect to 235 gene modules, each containing genes with a similar expression pattern in keratinocytes and epidermis. We identified 30 differentially expressed modules (DEMs biased towards PP-increased or PP-decreased expression. These DEMs were associated with regulatory axes involving cytokines (e.g., IFN-γ, IL-17A, TNF-α, transcription factors (e.g., STAT1, NF-κB, E2F, RUNX1 and chromatin modifiers (SETDB1. We identified an interferon-induced DEM with genes encoding anti-viral proteins (designated "STAT1-57", which was activated in psoriatic epidermis but repressed following biologic therapy. Genes within this DEM shared a motif near the transcription start site resembling the interferon-stimulated response element (ISRE. CONCLUSIONS: We analyzed a large patient cohort and developed a new approach for delineating epidermis-specific pathways and regulatory mechanisms that underlie altered gene expression in psoriasis. Our findings highlight previously unrecognized "transcription circuits" that can provide targets for development of non-systemic therapies.

  8. Identification of multisegmental nociceptive afferents that modulate locomotor circuits in the neonatal mouse spinal cord.

    Science.gov (United States)

    Mandadi, Sravan; Hong, Peter; Tran, Michelle A; Bráz, Joao M; Colarusso, Pina; Basbaum, Allan I; Whelan, Patrick J

    2013-08-15

    Compared to proprioceptive afferent collateral projections, less is known about the anatomical, neurochemical, and functional basis of nociceptive collateral projections modulating lumbar central pattern generators (CPG). Quick response times are critical to ensure rapid escape from aversive stimuli. Furthermore, sensitization of nociceptive afferent pathways can contribute to a pathological activation of motor circuits. We investigated the extent and role of collaterals of capsaicin-sensitive nociceptive sacrocaudal afferent (nSCA) nerves that directly ascend several spinal segments in Lissauer's tract and the dorsal column and regulate motor activity. Anterograde tracing demonstrated direct multisegmental projections of the sacral dorsal root 4 (S4) afferent collaterals in Lissauer's tract and in the dorsal column. Subsets of the traced S4 afferent collaterals expressed transient receptor potential vanilloid 1 (TRPV1), which transduces a nociceptive response to capsaicin. Electrophysiological data revealed that S4 dorsal root stimulation could evoke regular rhythmic bursting activity, and our data suggested that capsaicin-sensitive collaterals contribute to CPG activation across multiple segments. Capsaicin's effect on S4-evoked locomotor activity was potent until the lumbar 5 (L5) segments, and diminished in rostral segments. Using calcium imaging we found elevated calcium transients within Lissauer's tract and dorsal column at L5 segments when compared to the calcium transients only within the dorsal column at the lumbar 2 (L2) segments, which were desensitized by capsaicin. We conclude that lumbar locomotor networks in the neonatal mouse spinal cord are targets for modulation by direct multisegmental nSCA, subsets of which express TRPV1 in Lissauer's tract and the dorsal column. J. Comp. Neurol. 521:2870-2887, 2013. © 2013 Wiley Periodicals, Inc.

  9. Study and development of a multiphase voltage regulation module; Estudio y desarrollo de un modulo de regulacion de voltaje multifase

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez Hernandez, Arturo

    2004-02-15

    Within the new generation of low voltage integrated circuits, the microprocessors constitute one of the applications that imposes the strictest regulation limits. Therefore, the requirements for the supplying sources oriented to feed these devices are more and more critical. The converters devoted to provide high currents at low output voltages with a fast dynamic response are known as Voltage Regulation Modules. The only way of maintaining the high efficiency of these feed sources is by means of the use of the Synchronous Rectifiers (SR), which implies the substitution of the conventional diodes by controlled devices of lesser tension drop, known as Synchronous Rectifiers (SR). The most convenient devices in applications of Synchronous Rectification are the MOSFET due to their low ignition resistance in addition of being able to operate at high commutation frequencies. Two forms exist by means of which we can operate the SR gate: by means of external excitation or by means of self-excitation. The conventional VRM has been based on the Buck topology with Synchronous Rectification. Nevertheless, due to the limitations that this topology presents as far as dynamic response and efficiency, it has been decided on the use of Multiphase VRM fed with an input bus on 48V. As a solution to these problems, in this research work a Multiphase VRM is proposed, based on the Half symmetrical Bridge converter with the primary windings connected in series and external Synchronous Rectification, with which it is possible to obtain a low output voltage with high current and a fast dynamic response. Next the contents of the chapters of this document of thesis are presented in a summarized way. In chapter 1 the background that gives rise to the necessity of designing power supplies with low output tension, is presented. The associated problems to this type of low tension DC/DC converters are mentioned, and the concept of Synchronous Rectification with external excitation is introduced

  10. Simulation of the Process of Arc Energy-Effect in High Voltage Auto-Expansion SF6 Circuit Breaker

    Institute of Scientific and Technical Information of China (English)

    Rong Mingzhe; Yang Qian; Fan Chunduo

    2005-01-01

    A new magnetic hydro-dynamics (MHD) model of arc in H.V. auto-expansion SF6circuit breaker that takes into consideration nozzle ablation due to both radiation and thermal conduction is presented in this paper. The effect of PTFE (polytetrafluorethylene) vapor is considered in the mass, momentum and energy conservation equations of the constructed model. Then,the gas flow fields with and without conduction considered are simulated. By comparing the aforementioned two results, it is indicated that the arc's maximal temperature with conduction considered is 90 percent of that without considering conduction.

  11. Improve the open-circuit voltage of ZnO solar cells with inserting ZnS layers by two ways

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Yunfei [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Yang, Jinghai, E-mail: jhyang1@jlnu.edu.cn [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Yang, Lili; Cao, Jian [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Gao, Ming [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Zhang, Zhiqiang; Wang, Zhe [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Song, Hang [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

    2013-04-15

    ZnS NPs layers were deposited on ZnO NRs by two different ways. One is spin coating; the other is successive ionic layer adsorption and reaction (SILAR) method. The ZnO NRs/ZnS NPs composites were verified by X-ray diffraction, X-ray photoelectron spectroscopy, and UV–visible spectrophotometer; their morphologies and thicknesses were examined by scanning electron microscopic and transmission electron microscopic images. The CdS quantum dot sensitized solar cells (QDSSCs) were constructed using ZnO NRs/ZnS NPs composites as photoanode and their photovoltaic characteristic was studied by J–V curves. The results indicated that the way of SILAR is more beneficial for retarding the back transfer of electrons to CdS and electrolyte than spin coating method. The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method. When ZnS NPs layer was deposited for 10 times on ZnO NRs, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. - Graphical abstract: When ZnO nanorods were deposited by ZnS for 10 times, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. Highlights: ► ZnS layers were deposited with two different ways. ► The way of SILAR is more beneficial for retarding the back transfer of electrons. ► The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method.

  12. Transformerless DC-DC Converter Using Cockcroft-Walton Voltage Multiplier to Obtain High DC Voltage

    Directory of Open Access Journals (Sweden)

    Meghana G Naik,

    2014-11-01

    Full Text Available In the present scenario the use of transformer for high voltages in converter circuit reduces the overall operating efficiency due to leakage inductance and use of transformer also increases the operational cost. . Therefore the proposed system is implemented with transformer less DC-DC converter so as to obtain high DC voltage with the use of nine stage Cockcroft-Walton (CW voltage multiplier. The proposed converter operates in CCM (continuous conduction mode, so that the converter switch stress, the switching losses are reduced. The DC voltage at the input of the proposed model is low and is boosted up by boost inductor (Ls in DC-DC converter stage and performs inverter operation. The number of stages in CW-voltage multiplier circuit is applied with low input pulsating DC (AC Voltage voltage where it is getting converted to high DC output voltage. The proposed converter switches operates at two independent frequencies, modulating (fsm andalternating (fsc frequency. The fsm operates at higher frequency of the output while the fsc operates at lower frequency of the desired output voltage ripple and the output ripples can be adjusted by the switch Sc1 and Sc2. The regulation of the output voltage is achieved by controlling the Duty ratio.The simulation is carried over by the MATLABSIMULINK.

  13. Online Estimation of Model Parameters and State of Charge of LiFePO4 Batteries Using a Novel Open-Circuit Voltage at Various Ambient Temperatures

    Directory of Open Access Journals (Sweden)

    Fei Feng

    2015-04-01

    Full Text Available This study describes an online estimation of the model parameters and state of charge (SOC of lithium iron phosphate batteries in electric vehicles. A widely used SOC estimator is based on the dynamic battery model with predeterminate parameters. However, model parameter variances that follow with their varied operation temperatures can result in errors in estimating battery SOC. To address this problem, a battery online parameter estimator is presented based on an equivalent circuit model using an adaptive joint extended Kalman filter algorithm. Simulations based on actual data are established to verify accuracy and stability in the regression of model parameters. Experiments are also performed to prove that the proposed estimator exhibits good reliability and adaptability under different loading profiles with various temperatures. In addition, open-circuit voltage (OCV is used to estimate SOC in the proposed algorithm. However, the OCV based on the proposed online identification includes a part of concentration polarization and hysteresis, which is defined as parametric identification-based OCV (OCVPI. Considering the temperature factor, a novel OCV–SOC relationship map is established by using OCVPI under various temperatures. Finally, a validating experiment is conducted based on the consecutive loading profiles. Results indicate that our method is effective and adaptable when a battery operates at different ambient temperatures.

  14. Open-circuit voltage enhancement on the basis of polymer gel electrolyte for a highly stable dye-sensitized solar cell.

    Science.gov (United States)

    Wu, Congcong; Jia, Lichao; Guo, Siyao; Han, Song; Chi, Bo; Pu, Jian; Jian, Li

    2013-08-28

    Dye-sensitized solar cells (DSSC) have received considerable attention owing to their low preparation cost and easy fabrication process. However, one of the drawbacks that limits the further application of DSSC is their poor stability, arising from the leakage and volatilization of the liquid organic solvent in the electrolyte. Therefore, to improve the long-term stability of DSSC, polymer gel electrolyte was studied to replace the conventional liquid electrolyte in this work. The results show that compared to liquid electrolyte, DSSC with polymer gel electrolyte has a smaller short-circuit current (Jsc), which decreases with the increase of the polymer gelator. Nevertheless, with the employment of the polymer gel electrolyte, there is a significant enhancement of open-circuit voltage (Voc), and it increases with the increase of the polymer gelator content. The highest Voc, up to 0.873 V, can be obtained for DSSC with a 30% polymer gelator content. The impact of the polymer gel electrolyte on the photovoltaic performance of DSSC, especially on Voc, was studied by analyzing the charge-transfer kinetics in the polymer gel electrolyte. Furthermore, the influence of the polymer gel electrolyte on the long-term stability of DSSC was also investigated.

  15. Fault identification in crystalline silicon PV modules by complementary analysis of the light and dark current-voltage characteristics

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Sera, Dezso; Hacke, Peter

    2016-01-01

    (soiling, shading, discoloration). The premise of the method that is proposed is that different degradation modes affect the light and dark I-V characteristics of the PV module in different ways, leaving distinct signatures. This work focuses on identifying and correlating these specific signatures present......This article proposes a fault identification method, based on the complementary analysis of the light and dark current-voltage (I-V) characteristics of the photovoltaic (PV) module, to distinguish between four important degradation modes that lead to power loss in PV modules: (a) degradation...... in the light and dark I-V measurements, to specific degradation modes; a number of new dark I-V diagnostic parameters are proposed to quantify these signatures. The experimental results show that these dark I-V diagnostic parameters, complemented by light I-V performance and series resistance measurements can...

  16. Design and simulation of the space vector modulation and applied to a load RL powered by a voltage inverter

    Directory of Open Access Journals (Sweden)

    Marouane El Azzaoui

    2016-07-01

    Full Text Available The vector control performance applied to rotating machines depends largely on static and dynamic characteristics of the inverter associated with it. The development of the pulse-width modulation (PWM provided greater flexibility in the control of the converters. The objective of this work is to construct a simplified and practical space vector modulation (SVM based on the selection of the sequence and the calculation of the conduction time or extinction. We have presented the blocks of the simulation vector modulation on the Matlab / Simulink with a new method for determining conduction time and analyzed its application on a load RL supplied by a voltage inverter. The performance of the proposed method has been presented by the simulation results.

  17. Relationship between Work Function of Hole Collection Electrode and Temperature Dependence of Open-Circuit Voltage in Multilayered Organic Solar Cells

    Science.gov (United States)

    Itoh, Eiji; Shirotori, Toshiki

    2012-02-01

    We have investigated the photovoltaic properties of multilayered organic photovoltaic devices consisting of indium tin oxide (ITO)/(NiO)/donor/C60/bathocuproine (BCP)/Al structures. Open circuit voltage (VOC) increases with the decrease in temperature between 40 and 350 K. The VOC was, however, pinned at approximately 0.6 V for the device without NiO, probably owing to the insufficient work-function difference between ITO and Al electrodes. The hole injection was also markedly suppressed at the ITO/donor interface in the device with large IP donor materials without the buffer layer and abnormal S-shaped current density-voltage (J-V) characteristics were observed. On the other hand, the value of VOC increases with the increase in ionization potential (IP) of donor materials in the device with NiO buffer layers owing to the enhanced work-function difference of about 1 eV, and the S-shaped curves disappeared at the high temperatures above 200 K. The VOC is further improved to nearly 1.2 V by the UV-ozone treatment of the NiO surface. We have therefore concluded that the increment of work function of the anode caused by the insertion of an oxide buffer layer and the surface treatment of the electrode by UV-ozone treatment are essentially important for the improvement of VOC and charge transport/injection properties in the multilayered organic solar cell applications.

  18. High failure potential. Performance of solar modules may be drastically reduced because of high system voltages; Hohes Schadenspotenzial. Solarmodule koennen bei hohen Systemspannungen stark an Leistung verlieren

    Energy Technology Data Exchange (ETDEWEB)

    Siemer, Jochen; Haase, Christian

    2010-12-15

    Voltage-induced degradation is a new and serious problem for the solar industry, owing to the fact that high voltages as required in modern PV systems have undesirable side effects. 20 percent and more of the yield may be lost by leakage currents within a module. Solon is the first producer to announce countermeasures which will be applied in serial production immediately.

  19. Antagonist action of progesterone at σ-receptors in the modulation of voltage-gated sodium channels.

    Science.gov (United States)

    Johannessen, Molly; Fontanilla, Dominique; Mavlyutov, Timur; Ruoho, Arnold E; Jackson, Meyer B

    2011-02-01

    σ-Receptors are integral membrane proteins that have been implicated in a number of biological functions, many of which involve the modulation of ion channels. A wide range of synthetic ligands activate σ-receptors, but endogenous σ-receptor ligands have proven elusive. One endogenous ligand, dimethyltryptamine (DMT), has been shown to act as a σ-receptor agonist. Progesterone and other steroids bind σ-receptors, but the functional consequences of these interactions are unclear. Here we investigated progesterone binding to σ(1)- and σ(2)-receptors and evaluated its effect on σ-receptor-mediated modulation of voltage-gated Na(+) channels. Progesterone binds both σ-receptor subtypes in liver membranes with comparable affinities and blocks photolabeling of both subtypes in human embryonic kidney 293 cells that stably express the human cardiac Na(+) channel Na(v)1.5. Patch-clamp recording in this cell line tested Na(+) current modulation by the σ-receptor ligands ditolylguanidine, PB28, (+)SKF10047, and DMT. Progesterone inhibited the action of these ligands to varying degrees, and some of these actions were reduced by σ(1)-receptor knockdown with small interfering RNA. Progesterone inhibition of channel modulation by drugs was consistent with stronger antagonism of σ(2)-receptors. By contrast, progesterone inhibition of channel modulation by DMT was consistent with stronger antagonism of σ(1)-receptors. Progesterone binding to σ-receptors blocks σ-receptor-mediated modulation of a voltage-gated ion channel, and this novel membrane action of progesterone may be relevant to changes in brain and cardiovascular function during endocrine transitions.

  20. Constant Common Mode Voltage Modulation Strategy for the FB10 power converter

    DEFF Research Database (Denmark)

    Rodriguez, Pedro; Vázquez, Gerardo; Teodorescu, Remus;

    2011-01-01

    In this paper a modulation strategy based on the classical space vector modulation is applied to the FB10 converter, a new converter topology for PV applications. Firstly, the FB10 converter is presented and the natural modulation is computed. Secondly, the simulation and experimental results are...

  1. Constant Common Mode Voltage Modulation Strategy for the FB10 power converter

    DEFF Research Database (Denmark)

    Rodriguez, Pedro; Vázquez, Gerardo; Teodorescu, Remus

    2011-01-01

    In this paper a modulation strategy based on the classical space vector modulation is applied to the FB10 converter, a new converter topology for PV applications. Firstly, the FB10 converter is presented and the natural modulation is computed. Secondly, the simulation and experimental results are...

  2. Regulation of a lightweight high efficiency capacitator diode voltage multiplier dc-dc converter

    Science.gov (United States)

    Harrigill, W. T., Jr.; Myers, I. T.

    1976-01-01

    A method for the regulation of a capacitor diode voltage multiplier dc-dc converter has been developed which has only minor penalties in weight and efficiency. An auxiliary inductor is used, which only handles a fraction of the total power, to control the output voltage through a pulse width modulation method in a buck boost circuit.

  3. Regulation of a lightweight high efficiency capacitor diode voltage multiplier dc-dc converter

    Science.gov (United States)

    Harrigill, W. T., Jr.; Myers, I. T.

    1976-01-01

    A method for the regulation of a capacitor diode voltage multiplier dc-dc converter has been developed which has only minor penalties in weight and efficiency. An auxiliary inductor is used, which only handles a fraction of the total power, to control the output voltage through a pulse width modulation method in a buck boost circuit.

  4. Direct evidence that scorpion α-toxins (site-3 modulate sodium channel inactivation by hindrance of voltage-sensor movements.

    Directory of Open Access Journals (Sweden)

    Zhongming Ma

    Full Text Available The position of the voltage-sensing transmembrane segment, S4, in voltage-gated ion channels as a function of voltage remains incompletely elucidated. Site-3 toxins bind primarily to the extracellular loops connecting transmembrane helical segments S1-S2 and S3-S4 in Domain 4 (D4 and S5-S6 in Domain 1 (D1 and slow fast-inactivation of voltage-gated sodium channels. As S4 of the human skeletal muscle voltage-gated sodium channel, hNav1.4, moves in response to depolarization from the resting to the inactivated state, two D4S4 reporters (R2C and R3C, Arg1451Cys and Arg1454Cys, respectively move from internal to external positions as deduced by reactivity to internally or externally applied sulfhydryl group reagents, methane thiosulfonates (MTS. The changes in reporter reactivity, when cycling rapidly between hyperpolarized and depolarized voltages, enabled determination of the positions of the D4 voltage-sensor and of its rate of movement. Scorpion α-toxin binding impedes D4S4 segment movement during inactivation since the modification rates of R3C in hNav1.4 with methanethiosulfonate (CH3SO2SCH2CH2R, where R = -N(CH33 (+ trimethylammonium, MTSET and benzophenone-4-carboxamidocysteine methanethiosulfonate (BPMTS were slowed ~10-fold in toxin-modified channels. Based upon the different size, hydrophobicity and charge of the two reagents it is unlikely that the change in reactivity is due to direct or indirect blockage of access of this site to reagent in the presence of toxin (Tx, but rather is the result of inability of this segment to move outward to the normal extent and at the normal rate in the toxin-modified channel. Measurements of availability of R3C to internally applied reagent show decreased access (slower rates of thiol reaction providing further evidence for encumbered D4S4 movement in the presence of toxins consistent with the assignment of at least part of the toxin binding site to the region of D4S4 region of the voltage

  5. Device, system and method for a sensing electrical circuit

    Science.gov (United States)

    Vranish, John M. (Inventor)

    2009-01-01

    The invention relates to a driven ground electrical circuit. A driven ground is a current-measuring ground termination to an electrical circuit with the current measured as a vector with amplification. The driven ground module may include an electric potential source V.sub.S driving an electric current through an impedance (load Z) to a driven ground. Voltage from the source V.sub.S excites the minus terminal of an operational amplifier inside the driven ground which, in turn, may react by generating an equal and opposite voltage to drive the net potential to approximately zero (effectively ground). A driven ground may also be a means of passing information via the current passing through one grounded circuit to another electronic circuit as input. It may ground one circuit, amplify the information carried in its current and pass this information on as input to the next circuit.

  6. Electrooptic Methods for Measurement of Small DC Currents at High Voltage Level

    DEFF Research Database (Denmark)

    Tønnesen, Ole; Beatty, Neville; Skilbreid, Asbjørn Ottar

    1989-01-01

    . The measuring methods can be used both for development and supervision of electrical insulating systems. For DC measurements a system wherein the voltage is applied (across the Pockels cell) not directly but via an electrooptic circuit was developed. This circuit periodically inverts the polarity of the voltage...... fibre to an electrooptic converter. Second, by use of an electronic circuit the measured signal can be converted into a modulated frequency form for transmission along an optical fibre. These systems are described, measurement results are presented and improvements to be made in the future are outlined...... across the cell, effectively applying a square wave voltage with amplitude equal to the DC voltage to be measured. The switching circuit is based around two high voltage transistors TA, TB, with the Pockels cell electrodes being each connected to one of the transistor collectors. The transistor...

  7. A simplified method for estimation of iron loss in wound toroidal cores energised by pulse width modulated voltage sources

    Science.gov (United States)

    Tutkun, Nedim; Moses, Anthony J.

    2004-12-01

    Recently the strip wound toroidal cores have increasingly been used in switching mode and uninterruptible power supplies for a wide range of industrial applications. Therefore, the prediction of iron loss increase in such magnetic cores energised by non-sinusoidal voltage excitation is important step in the design of electromagnetic devices. In this investigation, a loss increase was estimated by determination of unknown constants in a previously developed loss separation model using genetic algorithms. Also the skin effect of flux density was taken into account for estimation of power loss under pulse width modulated voltage sources. The results obtained are in good agreement with the measured results in wound toroids at various flux densities.

  8. Measurement system for determination of current-voltage characteristics of PV modules

    Science.gov (United States)

    Idzkowski, Adam; Walendziuk, Wojciech; Borawski, Mateusz; Sawicki, Aleksander

    2015-09-01

    The realization of a laboratory stand for testing photovoltaic panels is presented here. The project of the laboratory stand was designed in SolidWorks software. The aim of the project was to control the electrical parameters of a PV panel. For this purpose a meter that measures electrical parameters i.e. voltage, current and power, was realized. The meter was created with the use of LabJack DAQ device and LabVIEW software. The presented results of measurements were obtained in different conditions (variable distance from the source of light, variable tilt angle of the panel). Current voltage characteristics of photovoltaic panel were created and all parameters could be detected in different conditions. The standard uncertainties of sample voltage, current, power measurements were calculated. The paper also gives basic information about power characteristics and efficiency of a solar cell.

  9. Prototype of Pulse Width Modulation Generator Based on Timer 555 and IRF 40

    Directory of Open Access Journals (Sweden)

    Wahyu Sapto Aji

    2008-08-01

    Full Text Available In many applications such of DC motor speed regulation commonly needed DC to DC voltage conversion. The method that frequently use for DC to DC conversion is using chopper circuit. In chopper circuit a DC voltage source being chopped at constant frequency but with variable duty cycle (in this case it’s called as Pulse Width Modulation, PWM. In this research a circuit chopper has been design successfully. The circuit uses 555 timer IC as PWM pulse shaper and IRF 40 power Mosfet as switch device. This circuit prototype successfully tested to drive a 12 watt DC motor at 1200 rpm with voltage at 12 V.

  10. Space Vector Pulse Width Modulation Scheme for a Seven-Phase Voltage Source Inverter

    Directory of Open Access Journals (Sweden)

    Mohd. Arif Khan

    2011-09-01

    Full Text Available This paper analyses a simple space vector PWM (SVPWM scheme for a seven-phase voltage source inverter. At first the conventional method of producing sinusoidal output voltage  by utilizing six active and a zero space vectors are used to synthesis the input reference and then new PWM scheme called time equivalent space vector PWM is presented.  A comparison of the proposed scheme with the conventional scheme is presented based on various performance indices. Extensive Simulation results are provided to validate the findings

  11. Hybrid-Circuit Module For Dc-To-Dc Power Converter

    Science.gov (United States)

    Vorperian, Vatche; Detwiler, Robert; Karmon, Dan

    1996-01-01

    Power hybrid module is general-purpose power-switching module providing flexibility in design and application. Complete dc-to-dc power converter constructed by adding input/output filters and feedback circuitry to module to suit specific application.

  12. Modulation by extracellular pH of low- and high-voltage-activated calcium currents of rat thalamic relay neurons.

    Science.gov (United States)

    Shah, M J; Meis, S; Munsch, T; Pape, H C

    2001-03-01

    The effects of changes in the extracellular pH (pH(o)) on low-voltage- (LVA) and high-voltage- (HVA) activated calcium currents of acutely isolated relay neurons of the ventrobasal thalamic complex (VB) were examined using the whole cell patch-clamp technique. Modest extracellular alkalinization (pH 7.3 to 7.7) reversibly enlarged LVA calcium currents by 18.6 +/- 3.2% (mean +/- SE, n = 6), whereas extracellular acidification (pH 7.3 to 6.9) decreased the current by 24.8 +/- 3.1% (n = 9). Normalized current amplitudes (I/I(7.3)) fitted as a function of pH(o) revealed an apparent pK(a) of 6.9. Both, half-maximal activation voltage and steady-state inactivation were significantly shifted to more negative voltages by 2-4 mV on extracellular alkalinization and to more positive voltages by 2-3 mV on extracellular acidification, respectively. Recovery from inactivation of LVA calcium currents was not significantly affected by changes in pH(o). In contrast, HVA calcium currents were less sensitive to changes in pH(o). Although extracellular alkalinization increased maximal HVA current by 6.0 +/- 2.0% (n = 7) and extracellular acidification decreased it by 11.9 +/- 0.02% (n = 11), both activation and steady-state inactivation were only marginally affected by the moderate changes in pH(o) used in the present study. The results show that calcium currents of thalamic relay neurons exhibit different pH(o) sensitivity. Therefore activity-related extracellular pH transients might selectively modulate certain aspects of the electrogenic behavior of thalamic relay neurons.

  13. Analog circuit design designing waveform processing circuits

    CERN Document Server

    Feucht, Dennis

    2010-01-01

    The fourth volume in the set Designing Waveform-Processing Circuits builds on the previous 3 volumes and presents a variety of analog non-amplifier circuits, including voltage references, current sources, filters, hysteresis switches and oscilloscope trigger and sweep circuitry, function generation, absolute-value circuits, and peak detectors.

  14. SF6高压断路器检测维护策略研究%Research on the detection and maintenance strategy of SF6 high voltage circuit breaker

    Institute of Scientific and Technical Information of China (English)

    孙勇军

    2016-01-01

    SF6高压断路器是利用六氟化硫气体作为灭弧介质和绝缘介质的一种断路器,由于SF6气体的优异性能,使其在应用过程中具备明显的优势.鉴于此,本文主要分析SF6高压断路器的检测维护策略.%SF6 high voltage circuit breaker is a circuit breaker which uses six sulfur fluoride gas as arc extinguishing media and insulating medium,which has obvious advantages in the application process because of the excellent performance of SF6 gas.In view of this,this paper mainly analyzes the SF6 high voltage circuit breaker testing and maintenance strategy.

  15. Three-Level Inverters with Common-Mode Voltage Cancellation Based on Synchronous Pulsewidth Modulation

    DEFF Research Database (Denmark)

    Oleschuk, Valentin; Blaabjerg, Frede

    2002-01-01

    of the voltage waveforms during the whole control range including overmodulation. Continuous, discontinuous and "direct-direct" schemes of synchronous PWM with both algebraic and trigonometric control functions have been analysed and compared. Simulations give the behaviour of the proposed methods and show some...

  16. Transient Voltage Recorder

    Science.gov (United States)

    Medelius, Pedro J. (Inventor); Simpson, Howard J. (Inventor)

    2002-01-01

    A voltage transient recorder can detect lightning induced transient voltages. The recorder detects a lightning induced transient voltage and adjusts input amplifiers to accurately record transient voltage magnitudes. The recorder stores voltage data from numerous monitored channels, or devices. The data is time stamped and can be output in real time, or stored for later retrieval. The transient recorder, in one embodiment, includes an analog-to-digital converter and a voltage threshold detector. When an input voltage exceeds a pre-determined voltage threshold, the recorder stores the incoming voltage magnitude and time of arrival. The recorder also determines if its input amplifier circuits clip the incoming signal or if the incoming signal is too low. If the input data is clipped or too low, the recorder adjusts the gain of the amplifier circuits to accurately acquire subsequent components of the lightning induced transients.

  17. Mixed voltage VLSI design

    Science.gov (United States)

    Panwar, Ramesh; Rennels, David; Alkalaj, Leon

    1993-01-01

    A technique for minimizing the power dissipated in a Very Large Scale Integration (VLSI) chip by lowering the operating voltage without any significant penalty in the chip throughput even though low voltage operation results in slower circuits. Since the overall throughput of a VLSI chip depends on the speed of the critical path(s) in the chip, it may be possible to sustain the throughput rates attained at higher voltages by operating the circuits in the critical path(s) with a high voltage while operating the other circuits with a lower voltage to minimize the power dissipation. The interface between the gates which operate at different voltages is crucial for low power dissipation since the interface may possibly have high static current dissipation thus negating the gains of the low voltage operation. The design of a voltage level translator which does the interface between the low voltage and high voltage circuits without any significant static dissipation is presented. Then, the results of the mixed voltage design using a greedy algorithm on three chips for various operating voltages are presented.

  18. Circuit mismatch and current coupling effect influence on paralleling SiC MOSFETs in multichip power modules

    DEFF Research Database (Denmark)

    Li, Helong; Beczkowski, Szymon; Munk-Nielsen, Stig

    2015-01-01

    This paper reveals that there are circuit mismatches and a current coupling effect in the direct bonded copper (DBC) layout of a silicon carbide (SiC) MOSFET multichip power module. According to the modelling and the mathematic analysis of the DBC layout, the mismatch of the common source stray...... inductance in the DBC layout can lead to transient current imbalance among the paralleled SiC MOSFET dies in the multichip power module while the current coupling effect aggravates the current imbalance. Two models of the power module DBC layout, with and without the current coupling effect, are compared...... to demonstrate the influence of this effect. LTspice simulation and experimental results validate the analysis and the new findings....

  19. Kinetic changes and modulation by carbamazepine on voltage-gated sodium channels in rat CA1 neurons after epilepsy

    Institute of Scientific and Technical Information of China (English)

    Guang-chun SUN; Taco WERKMAN; Wytse J WADMAN

    2006-01-01

    Aim: To study whether the functional properties of sodium channels, and subsequently the channel modulation by carbamazepine (CBZ) in hippocampal CA1 neurons can be changed after epileptic seizures. Methods: We used the acutely dissociated hippocampal CA1 pyramidal cells from epilepsy model rats 3 weeks and 3 months respectively after kainate injection, and whole-cell voltage-clamp techniques. Results: After long-term epileptic seizures, both sodium channel voltage-dependence of activation and steady-state inactivation shifted to more hyperpolarizing potentials, which resulted in the enlarged window current; the membrane density of sodium current decreased and the time constant of recovery from inactivation increased. CBZ displayed unchanged efficacy on sodium channels, with a similar binding rate to them, except that at higher concentrations, the voltage shift of inactivation was reduced. For the short-term kainate model rats, no differences were detected between the control and epilepsy groups. Conclusion: These results indicate that the properties of sodium channels in acutely dissociated hippocampal neurons could be changed following long-term epilepsy, but the alternation might not be enough to induce the channel resistance to CBZ.

  20. Enhancement of open-circuit voltage on organic photovoltaic devices by Al-doped TiO{sub 2} modifying layer produced by sol–gel method

    Energy Technology Data Exchange (ETDEWEB)

    Valaski, R.; Arantes, C.; Senna, C.A.; Carôzo, Victor; Achete, C.A. [Materials Metrology Division, Instituto Nacional de Metrologia, Qualidade e Tecnologia, Xerém, Duque de Caxias 25250-020, RJ (Brazil); Cremona, M., E-mail: cremona@fis.puc-rio.br [Materials Metrology Division, Instituto Nacional de Metrologia, Qualidade e Tecnologia, Xerém, Duque de Caxias 25250-020, RJ (Brazil); Physics Department, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro 22453-970, RJ (Brazil)

    2014-12-01

    Sol–gel method has shown several advantages for oxide synthesis, such as lower cost production, coating large areas, lower processing temperatures and ease insertion of doping materials. Therefore, it is attractive for production of intermediate and electrode modifying layers in organic optoelectronic devices. Herein, spin-coated aluminum-doped titanium dioxide (AlTiO{sub 2}) thin films were produced by sol–gel method onto glass and fluorine-doped tin oxide (FTO) substrates, using different Al-dopant concentrations and post-done annealing temperatures. Electrical measurements were performed in order to investigate the improvement of the TiO{sub 2} resistivity. Additionally, structural, compositional, morphological, optical and electrical properties of the optimal AlTiO{sub 2} modifying layers onto FTO substrates were probed by different techniques, and compared with those obtained from the undoped thin films produced under similar conditions. Organic photovoltaic devices (OPVs) with the structure FTO/AlTiO{sub 2}(30 nm)/C{sub 60}(50 nm)/CuPc(50 nm)/Al with an Al concentration of 0.03 M in AlTiO{sub 2} layer were produced. The insertion of AlTiO{sub 2} thin films improved the short-circuit current density (J{sub sc}) as well as the open circuit voltage (V{sub oc}) in comparison with non-modified electrode FTO based devices. This behavior is discussed in terms of induced interface phenomena as dipole formation induced by Al. - Highlights: • Easy and cheap solution-process for AlTiO{sub 2} modification of FTO electrode for OPVs • Electrical, structural and optical characterization of TiO{sub 2} layers with Al-dopant • Improvement of Voc and Jsc of inverted OPVs with AlTiO{sub 2} modified electrode.