WorldWideScience

Sample records for voltage high temperature

  1. Temperature Stabilized Characterization of High Voltage Power Supplies

    CERN Document Server

    Krarup, Ole

    2017-01-01

    High precision measurements of the masses of nuclear ions in the ISOLTRAP experiment relies on an MR-ToF. A major source of noise and drift is the instability of the high voltage power supplies employed. Electrical noise and temperature changes can broaden peaks in time-of-flight spectra and shift the position of peaks between runs. In this report we investigate how the noise and drift of high-voltage power supplies can be characterized. Results indicate that analog power supplies generally have better relative stability than digitally controlled ones, and that the high temperature coefficients of all power supplies merit efforts to stabilize them.

  2. Evaluation of high temperature dielectric films for high voltage power electronic applications

    Science.gov (United States)

    Suthar, J. L.; Laghari, J. R.

    1992-01-01

    Three high temperature films, polyimide, Teflon perfluoroalkoxy and poly-P-xylene, were evaluated for possible use in high voltage power electronic applications, such as in high energy density capacitors, cables and microelectronic circuits. The dielectric properties, including permittivity and dielectric loss, were obtained in the frequency range of 50 Hz to 100 kHz at temperatures up to 200 C. The dielectric strengths at 60 Hz were determined as a function of temperature to 250 C. Confocal laser microscopy was performed to diagnose for voids and microimperfections within the film structure. The results obtained indicate that all films evaluated are capable of maintaining their high voltage properties, with minimal degradation, at temperatures up to 200 C. However, above 200 C, they lose some of their electrical properties. These films may therefore become viable candidates for high voltage power electronic applications at high temperatures.

  3. Investigation of Threshold Voltage Variability at High Temperature Using Takeuchi Plot

    Science.gov (United States)

    Tsunomura, Takaaki; Nishida, Akio; Hiramoto, Toshiro

    2010-05-01

    The property of metal-oxide-semiconductor field-effect transistors' (MOSFETs) threshold voltage (VT) variability at high temperature is investigated by evaluating the device matrix array test element group (DMA-TEG). It is revealed that VT variation is lower at high temperature than at room temperature, and that VT at high temperature has a strong correlation with VT at room temperature. The normal property of VT variability both at room and high temperatures is validated using the normal probability plot. The decrease in VT variation at high temperature stems from the reduction of the channel depletion layer width (Wdep). The temperature dependence of VT variation is evaluated using the Takeuchi plot, the VT variation normalization method. It is revealed that the change in BVT, the parameter of VT variation in the Takeuchi plot, is very small with varying temperature.

  4. Optimizing performance per watt on GPUs in High Performance Computing: temperature, frequency and voltage effects

    CERN Document Server

    Price, D C; Barsdell, B R; Babich, R; Greenhill, L J

    2014-01-01

    The magnitude of the real-time digital signal processing challenge attached to large radio astronomical antenna arrays motivates use of high performance computing (HPC) systems. The need for high power efficiency (performance per watt) at remote observatory sites parallels that in HPC broadly, where efficiency is an emerging critical metric. We investigate how the performance per watt of graphics processing units (GPUs) is affected by temperature, core clock frequency and voltage. Our results highlight how the underlying physical processes that govern transistor operation affect power efficiency. In particular, we show experimentally that GPU power consumption grows non-linearly with both temperature and supply voltage, as predicted by physical transistor models. We show lowering GPU supply voltage and increasing clock frequency while maintaining a low die temperature increases the power efficiency of an NVIDIA K20 GPU by up to 37-48% over default settings when running xGPU, a compute-bound code used in radio...

  5. Effects of vinylene carbonate on high temperature storage of high voltage Li-ion batteries

    Science.gov (United States)

    Eom, Ji-Yong; Jung, In-Ho; Lee, Jong-Hoon

    The effects of vinylene carbonate (VC) on high temperature storage of high voltage Li-ion batteries are investigated. 1.3 M of LiPF 6 dissolved in ethylene carbonate (EC), ethylmethyl carbonate (EMC) and dimethyl carbonate (DMC) of 3:3:4 volume ratio is used as original electrolyte for 18650 cylindrical cells with LiCoO 2 cathode and graphite anode. VC is then added to electrolyte. At the initial stage of the high temperature storage, higher open-circuit voltage (OCV) is maintained when increasing the VC concentration. As the storage time increases, OCV of higher VC concentration drops gradually, and then the gas evolution takes place abruptly. Gas analysis shows methane (CH 4) decreases with increase of the VC concentration due to formation of stable solid electrolyte interface (SEI) layer on the graphite. Since the residual VC after formation of the SEI layer decomposes on the cathode surface, carbon dioxide (CO 2) dramatically increases on the cathode with the VC concentration, leaving poly(VC) film at the anode surface, as suggested by XPS test results.

  6. Forward voltage short-pulse technique for measuring high power laser array junction temperature

    Science.gov (United States)

    Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

    2012-01-01

    The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

  7. High-voltage picosecond photoconductor switch based on low-temperature-grown GaAs

    Science.gov (United States)

    Frankel, Michael Y.; Whitaker, John F.; Mourou, Gerard A.; Smith, Frank W.; Calawa, Arthur R.

    1990-01-01

    A GaAs material grown by molecular beam epitaxy at a low substrate temperature was used to fabricate a photoconductor switch that produces 6-V picosecond electrical pulses. The pulses were produced on a microwave coplanar-strip transmission line lithographically patterned on the low-temperature (LT) GaAs. A 150-fs laser pulse was used to generate carriers in the LT GaAs gap between the metal strips, partially shorting a high DC voltage placed across the lines. The 6-V magnitude of the electrical pulses obtained is believed to be limited by the laser pulse power and not by the properties of the LT GaAs. Experiments were also performed on a picosecond photoconductor switch fabricated on a conventional ion-damaged silicon-on-sapphire substrate. Although comparable pulse durations were obtained, the highest pulse voltage achieved with the latter device was 0.6 V.

  8. Method and apparatus for connecting high voltage leads to a high temperature super-conducting transformer

    Science.gov (United States)

    Golner, Thomas M.; Mehta, Shirish P.

    2005-07-26

    A method and apparatus for connecting high voltage leads to a super-conducting transformer is provided that includes a first super-conducting coil set, a second super-conducting coil set, and a third super-conducting coil set. The first, second and third super-conducting coil sets are connected via an insulated interconnect system that includes insulated conductors and insulated connectors that are utilized to connect the first, second, and third super-conducting coil sets to the high voltage leads.

  9. High-density magnetoresistive random access memory operating at ultralow voltage at room temperature.

    Science.gov (United States)

    Hu, Jia-Mian; Li, Zheng; Chen, Long-Qing; Nan, Ce-Wen

    2011-11-22

    The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch(-2), ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns.

  10. Monitoring operating temperature and supply voltage in achieving high system dependability

    NARCIS (Netherlands)

    Khan, M.A.; Kerkhoff, Hans G.

    2013-01-01

    System dependability being a set of number of attributes, of which the important reliability, heavily depends on operating temperature and supply voltage. Any change beyond the designed specifications may change the system performance and could result in system reliability and hence dependability

  11. Monitoring operating temperature and supply voltage in achieving high system dependability

    NARCIS (Netherlands)

    Khan, M.A.; Kerkhoff, Hans G.

    2013-01-01

    System dependability being a set of number of attributes, of which the important reliability, heavily depends on operating temperature and supply voltage. Any change beyond the designed specifications may change the system performance and could result in system reliability and hence dependability pr

  12. Monitoring operating temperature and supply voltage in achieving high system dependability

    NARCIS (Netherlands)

    Khan, Muhammad Aamir; Kerkhoff, Hans G.

    2013-01-01

    System dependability being a set of number of attributes, of which the important reliability, heavily depends on operating temperature and supply voltage. Any change beyond the designed specifications may change the system performance and could result in system reliability and hence dependability pr

  13. A facile approach to derive binder protective film on high voltage spinel cathode materials against high temperature degradation

    Science.gov (United States)

    Chou, Wei-Yu; Jin, Yi-Chun; Duh, Jenq-Gong; Lu, Cheng-Zhang; Liao, Shih-Chieh

    2015-11-01

    The electrochemical performance of spinel LiNi0.5Mn1.5O4 cathode combined with different binders at elevated temperature is firstly investigated. The water soluble binder, such as sodium carboxymethyl cellulose (CMC) and sodium alginate (SA), is compared with the polyvinylidene difluoride (PVdF) binder used in non-aqueous process. The aqueous process can meet the need of Li-ion battery industry due to environmental-friendly and cost effectiveness by replacing toxic organic solvent, such as N-methyl-pyrrolidone (NMP). In this study, a significantly improved high temperature cycling performance is successfully obtained as compared to the traditional PVdF binder. The aqueous binder can serve as a protective film which inhibits the serious Ni and Mn dissolution especially at elevated temperature. Our result demonstrates a facile approach to solve the problem of capacity fading for high voltage spinel cathodes.

  14. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  15. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  16. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  17. High-Voltage 1-kW dc/dc Converter Developed for Low-Temperature Operation

    Science.gov (United States)

    Patterson, Richard L.

    1998-01-01

    Recently, Lewis developed and demonstrated a high-voltage, 1-kW dc/dc converter that operates from room temperature to -184 C. A power supply designed for use in a NASA ion beam propulsion system was utilized as a starting point for the design of a low- (wide-) temperature dc/dc converter. For safety, we decided to halve the output voltage and power level, so the converter was designed for an 80-Vdc input and a 550-Vdc output at 1 kW.

  18. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  19. SOI-Based High-Voltage, High-Temperature Integrated Circuit Gate Driver for SiC-Based Power FETs

    Energy Technology Data Exchange (ETDEWEB)

    Huque, Mohammad A [ORNL; Tolbert, Leon M [ORNL; Blalock, Benjamin [University of Tennessee, Knoxville (UTK); Islam, Syed K [University of Tennessee, Knoxville (UTK)

    2010-01-01

    Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimizing system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8-m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

  20. Ceramic end seal design for high temperature high voltage nuclear instrumentation cables

    Science.gov (United States)

    Meiss, James D.; Cannon, Collins P.

    1979-01-01

    A coaxial, hermetically sealed end structure is described for electrical instrumentation cables. A generally tubular ceramic body is hermetically sealed within a tubular sheath which is in turn sealed to the cable sheath. One end of the elongated tubular ceramic insulator is sealed to a metal end cap. The other end of the elongated tubular insulator has an end surface which is shaped concave relative to a central conductor which extends out of this end surface. When the end seal is hermetically sealed to an instrumentation cable device and the central conductor is maintained at a high positive potential relative to the tubular metal sheath, the electric field between the central conductor and the outer sheath tends to collect electrons from the concave end surface of the insulator. This minimizes breakdown pulse noise generation when instrumentation potentials are applied to the central conductor.

  1. High voltage pulse generator

    Science.gov (United States)

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  2. Fabrication of hemispherical nano structure on a curved Al surface using low-temperature and high-voltage anodizing method.

    Science.gov (United States)

    Shin, H G; Park, Y M; Kim, B H; Seo, Y H

    2011-01-01

    A simple method of fabricating hemispherical nanostructures on a curved aluminum rod surface was presented. In conventional methods of fabricating nanopatterns on a curved aluminum surface, mechanical or chemical processes have been widely used for the lens technologies. Such processes are not only expensive with long processing times, however, but they also involve local fabrication and are limited in the dimension size. In this paper, a method of fabricating hemispherical nanostructures on a curved aluminum surface is suggested for a functional three-dimensional (3D) master using a low-temperature and high-voltage (LTHV) anodizing method. By reducing the aluminum reaction rate under a low-temperature environment, the reaction current density can be remarkably reduced even though a high voltage was induced. Using the LTHV anodizing method, the hemispherical pattern size can be easily controlled with respect to voltage variations. The sizes of the hemispherical nanopatterns were about 150-300 nm. Using the LTHV anodizing process, hemispherical nanostructures can be obtained on a curved aluminum surface with controllable pattern sizes of 150-300 nm without defects such as burring from Joule's heat, micro-scratches, and cracks. A curved 3D hemispherical nanostructure may be used as a master in the roll-to-roll process.

  3. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  4. Time dependent and temperature dependent properties of the forward voltage characteristic of InGaN high power LEDs

    Directory of Open Access Journals (Sweden)

    P. L. Fulmek

    2017-03-01

    Full Text Available Estimating the junction temperature and its dynamic behavior in dependence of various operating conditions is an important issue, since these properties influence the optical characteristics as well as the aging processes of a light-emitting diode (LED. Particularly for high-power LEDs and pulsed operation, the dynamic behavior and the resulting thermal cycles are of interest. The forward voltage method relies on the existence of a time-independent unique triple of forward-voltage, forward-current, and junction temperature. These three figures should as well uniquely define the optical output power and spectrum, as well as the loss power of the LED, which is responsible for an increase of the junction temperature. From transient FEM-simulations one may expect an increase of the temperature of the active semiconductor layer of some 1/10 K within the first 10 μs. Most of the well-established techniques for junction temperature measurement via forward voltage method evaluate the measurement data several dozens of microseconds after switching on or switching off and estimate the junction temperature by extrapolation towards the time of switching. In contrast, the authors developed a measurement procedure with the focus on the first microseconds after switching. Besides a fast data acquisition system, a precise control of the switching process is required, i.e. a precisely defined current pulse amplitude with fast rise-time and negligible transient by-effects. We start with a short description of the measurement setup and the newly developed control algorithm for the generation of short current pulses. The thermal characterization of the LED chip during the measurement procedures is accomplished by an IR thermography system and transient finite element simulations. The same experimental setup is used to investigate the optical properties of the LED in an Ulbricht-sphere. Our experiments are performed on InGaN LED chips mounted on an Al based

  5. AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

    Science.gov (United States)

    El Fatimy, A.; Dyakonova, N.; Meziani, Y.; Otsuji, T.; Knap, W.; Vandenbrouk, S.; Madjour, K.; Théron, D.; Gaquiere, C.; Poisson, M. A.; Delage, S.; Prystawko, P.; Skierbiszewski, C.

    2010-01-01

    We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated region of the transistor channel. Emission appears at a certain drain bias in a thresholdlike manner. Observed emission is interpreted as a result of Dyakonov-Shur plasma wave instability in the gated two-dimensional electron gas.

  6. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  7. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  8. Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference

    OpenAIRE

    El Hafed Boufouss; Francis, Laurent A.; Valeriya Kilchytska; Pierre Gérard; Pascal Simon; Denis Flandre

    2013-01-01

    This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40–200 °C and for differ...

  9. Characteristics of temperature rise in variable inductor employing magnetorheological fluid driven by a high-frequency pulsed voltage source

    Science.gov (United States)

    Lee, Ho-Young; Kang, In Man; Shon, Chae-Hwa; Lee, Se-Hee

    2015-05-01

    A variable inductor with magnetorheological (MR) fluid has been successfully applied to power electronics applications; however, its thermal characteristics have not been investigated. To evaluate the performance of the variable inductor with respect to temperature, we measured the characteristics of temperature rise and developed a numerical analysis technique. The characteristics of temperature rise were determined experimentally and verified numerically by adopting a multiphysics analysis technique. In order to accurately estimate the temperature distribution in a variable inductor with an MR fluid-gap, the thermal solver should import the heat source from the electromagnetic solver to solve the eddy current problem. To improve accuracy, the B-H curves of the MR fluid under operating temperature were obtained using the magnetic property measurement system. In addition, the Steinmetz equation was applied to evaluate the core loss in a ferrite core. The predicted temperature rise for a variable inductor showed good agreement with the experimental data and the developed numerical technique can be employed to design a variable inductor with a high-frequency pulsed voltage source.

  10. Characteristics of temperature rise in variable inductor employing magnetorheological fluid driven by a high-frequency pulsed voltage source

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Ho-Young; Kang, In Man, E-mail: imkang@ee.knu.ac.kr [School of Electronics Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Shon, Chae-Hwa [Korea Electrotechnology Research Institute, Changwon 642-120 (Korea, Republic of); Lee, Se-Hee, E-mail: shlees@knu.ac.kr [Department of Electrical Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of)

    2015-05-07

    A variable inductor with magnetorheological (MR) fluid has been successfully applied to power electronics applications; however, its thermal characteristics have not been investigated. To evaluate the performance of the variable inductor with respect to temperature, we measured the characteristics of temperature rise and developed a numerical analysis technique. The characteristics of temperature rise were determined experimentally and verified numerically by adopting a multiphysics analysis technique. In order to accurately estimate the temperature distribution in a variable inductor with an MR fluid-gap, the thermal solver should import the heat source from the electromagnetic solver to solve the eddy current problem. To improve accuracy, the B–H curves of the MR fluid under operating temperature were obtained using the magnetic property measurement system. In addition, the Steinmetz equation was applied to evaluate the core loss in a ferrite core. The predicted temperature rise for a variable inductor showed good agreement with the experimental data and the developed numerical technique can be employed to design a variable inductor with a high-frequency pulsed voltage source.

  11. The current-voltage and noise properties of high temperature superconductor SNS and grain boundary junctions

    CERN Document Server

    McGordon, A

    1999-01-01

    transport that was dominated by the interlayer material, but supercurrent transport that could be due to pinhole shorts. In addition, both geometries, especially the sandwich junction, showed large amounts of normal state noise making these junctions unsuitable for device applications. The effect of shining laser light onto a junction was investigated. The effects on the I-V characteristic were unobservable with the experimental resolution available. The effect of the light on the critical current noise of the junction was to reduce the noise peak slightly when compared to the unilluminated case- the reduction was of the order of 10%, comparable with experimental resolution. The study of the noise from Josephson Junctions is an intense field of research. Despite this, no clear picture of the current transport in these devices has emerged. Without the detailed understanding of the mechanisms of current transport in High Temperature Superconductor junctions, the design of superconducting electronics will not mo...

  12. Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

    Science.gov (United States)

    Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

    2013-12-13

    This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

  13. Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS Silicon-on-Insulator (SOI Voltage Reference

    Directory of Open Access Journals (Sweden)

    El Hafed Boufouss

    2013-12-01

    Full Text Available This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40–200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si performed at three different temperatures (room temperature, 100 °C and 200 °C. The maximum drift of the reference voltage VREF depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μ W at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of VREF and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

  14. High temperature behavior of multi-region direct current current-voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal-oxide-semiconductor field-effect-transistors reliability

    Science.gov (United States)

    He, Yandong; Zhang, Ganggang; Zhang, Xing

    2014-01-01

    With the process compatibility with the mainstream standard complementary metal-oxide-semiconductor (CMOS), shallow trench isolation (STI) based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular for its better tradeoff between breakdown voltage and performance, especially for smart power applications. A multi-region direct current current-voltage (MR-DCIV) technique with spectroscopic features was demonstrated to map the interface state generation in the channel, accumulation and STI drift regions. High temperature behavior of MR-DCIV spectroscopy was analyzed and a physical model was verified. Degradation of STI-based LDMOS transistors under high temperature reverse bias (HTRB) stress is experimentally studied by MR-DCIV spectroscopy. The impact of interface state location on device electrical characteristics was investigated. Our results show that the major contribution to HTRB degradation, in term of the on-resistance degradation, was attributed to interface state generation under STI drift region.

  15. High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C.; Samnakay, R.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States); Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-02-14

    We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

  16. High Voltage Distribution

    Science.gov (United States)

    Norbeck, Edwin; Miller, Michael; Onel, Yasar

    2010-11-01

    For detector arrays that require 5 to 10 kV at a few microamps each for hundreds of detectors, using hundreds of HV power supplies is unreasonable. Bundles of hundreds of HV cables take up space that should be filled with detectors. A typical HV module can supply 1 ma, enough current for hundreds of detectors. It is better to use a single HV module and distribute the current as needed. We show a circuit that, for each detector, measures the current, cuts off the voltage if the current exceeds a set maximum, and allows the HV to be turned on or off from a control computer. The entire array requires a single HV cable and 2 or 3 control lines. This design provides the same voltage to all of the detectors, the voltage set by the single HV module. Some additional circuitry would allow a computer controlled voltage drop between the HV and each individual detector.

  17. Development of the Composite High Voltage Optical Fiber Temperature Measurement Cable%高压光纤复合测温电缆的研制

    Institute of Scientific and Technical Information of China (English)

    金金元

    2012-01-01

    In order to use optical fiber distributed temperature monitoring system to on-line monitor the temperature of the cable in operation; a composite high voltage fiber optic temperature measuring cable is developed independently. The structure design, the production process of building in of the fibers, and the performance testing of the composite high voltage optical fiber temperature measuring cable are described in detail.%为利用光纤分布式温度监测系统对运行电缆的温度进行实时在线监测,自主开发了高压光纤复合测温电缆。对高压光纤复合测温电缆结构设计、光纤内置等制造过程和性能检测进行了较为详细的阐述。

  18. Voltage, Temperature, Frequency Margin Test Report

    DEFF Research Database (Denmark)

    Denver, Troelz

    1999-01-01

    The purpose of the tests is to establish the camera functionality when it is exposed to an extreme environment for prolonged periods, thus simulating the end of life performance. This environment covers temperature, input clock frequency and supply voltage variation......The purpose of the tests is to establish the camera functionality when it is exposed to an extreme environment for prolonged periods, thus simulating the end of life performance. This environment covers temperature, input clock frequency and supply voltage variation...

  19. A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

    Energy Technology Data Exchange (ETDEWEB)

    Lamichhane, Ranjan [University of Arkansas; Ericson, Milton Nance [ORNL; Frank, Steven Shane [ORNL; BRITTONJr., CHARLES L. [Oak Ridge National Laboratory (ORNL); Marlino, Laura D [ORNL; Mantooth, Alan [University of Arkansas; Francis, Matt [APEI, Inc.; Shepherd, Dr. Paul [University of Arkansas; Glover, Dr. Michael [University of Arkansas; Podar, Mircea [ORNL; Perez, M [University of Arkansas; Mcnutt, Tyler [APEI, Inc.; Whitaker, Mr. Bret [APEI, Inc.; Cole, Mr. Zach [APEI, Inc.

    2014-01-01

    Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.

  20. Modular High Voltage Power Supply

    Energy Technology Data Exchange (ETDEWEB)

    Newell, Matthew R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-05-18

    The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

  1. 高压带电体温度检测装置%Temperature Detection Device of High-voltage Electrified Body

    Institute of Scientific and Technical Information of China (English)

    谭光韧; 宋峰; 吴建华

    2012-01-01

    In order to solve problems of electrical insulation and low precision existed in traditional temperature detection methods of high-voltage electrified body, the paper introduced a design scheme of a novel temperature detection device of high-voltage electrified body. The device collects temperature signals by use of temperature sensor of traditional contacting temperature detection methods, and uses a method of controlled current source and induced power source to supply power. Each induced power source connects controlled current source through high-voltage wire, induced power sources has no connection with each other at different measuring point, and fiber is as transmission medium of temperature signals, so as to realize electrical insulation. The experimental result showed that the device has stable voltage of induced power source, high precision and strong anti-interference ability.%针对传统高压带电体测温方法存在的难以实现电气绝缘、精度低等问题,介绍了一种新型高压带电体温度检测装置的设计方案.该装置采用传统接触式测温方式下的温度传感器采集温度信号,采用可调电流源+感生电源方式实现供电,各感生电源与可调电流源通过高压线连接,不同测温点的感生电源之间没有电气连接,且采用光纤传输温度信号,从而很好地实现了电气绝缘.实验结果表明,该装置的感生电源电压稳定,测温精度高,抗干扰能力强.

  2. Power Packaging of Spray-Cooled SiC Devices for High Temperature and High Voltage Operation: Final Report

    Science.gov (United States)

    2008-07-01

    quickly but effluent fluid removal system becomes the limiting factor . Therefore, heat flux does not increase further. Hence, the optimum distance for...network [3.9]. Though many factors are important in material selection, the primary focus is the glass transition temperature (Tg). There are...the desired switching frequencies. * I Three- r1aL phase dc-ac ac-dc Vph converter # 4 convertr converter 1 # 2 # 3 * I r --- -- -- - 4I6l kV ACSIDE

  3. Portable High Voltage Impulse Generator

    Directory of Open Access Journals (Sweden)

    S. Gómez

    2011-07-01

    Full Text Available This paper presents a portable high voltage impulse generator which was designed and built with insulation up to 20 kV. This design was based on previous work in which simulation software for standard waves was developed. Commercial components and low-cost components were used in this work; however, these particular elements are not generally used for high voltage applications. The impulse generators used in industry and laboratories are usually expensive; they are built to withstand extra high voltage and they are big, making them impossible to transport. The proposed generator is portable, thereby allowing tests to be made on devices that cannot be moved from their location. The results obtained with the proposed impulse generator were satisfactory in terms of time and waveforms compared to other commercial impulse generators and the standard impulse wave simulator.

  4. Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Blalock, Benjamin J [ORNL; Islam, Syed K [ORNL

    2010-01-01

    Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8--m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

  5. The high voltage homopolar generator

    Science.gov (United States)

    Price, J. H.; Gully, J. H.; Driga, M. D.

    1986-11-01

    System and component design features of proposed high voltage homopolar generator (HVHPG) are described. The system is to have an open circuit voltage of 500 V, a peak output current of 500 kA, 3.25 MJ of stored inertial energy and possess an average magnetic-flux density of 5 T. Stator assembly components are discussed, including the stator, mount structure, hydrostatic bearings, main and motoring brushgears and rotor. Planned operational procedures such as monitoring the rotor to full speed and operation with a superconducting field coil are delineated.

  6. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  7. Advances in high voltage engineering

    CERN Document Server

    Haddad, A

    2005-01-01

    This book addresses the very latest research and development issues in high voltage technology and is intended as a reference source for researchers and students in the field, specifically covering developments throughout the past decade. This unique blend of expert authors and comprehensive subject coverage means that this book is ideally suited as a reference source for engineers and academics in the field for years to come.

  8. High Voltage Pulse Testing Survey.

    Science.gov (United States)

    1985-10-01

    Cryogenic 23 E. Liquids 26 F. Solids 28 1. Polyethylene 28 2. Cross-Linked Polyethylene ( XLPE ) 29 3. Polyimide and Polyvenylchloride (PVC) 31 VI Benefits 35 A...Strength of XLPE Cables 29 vii * 4" I PROGRAM OBJECTIVES The Pulse Test Survey summarizes government, industry, and technical reports on high voltage pulse...system of silicone oil on a XLPE (cross-linked polyethylene) spacer tends to lower the impulse breakdown by approximately 10 percent. The negative impulse

  9. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    Science.gov (United States)

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  10. Electrodynamic stabilization conditions for high-temperature superconducting composites with different types of current-voltage characteristic nonlinearity

    Science.gov (United States)

    Arkharov, A. M.; Lavrov, N. A.; Romanovskii, V. R.

    2014-06-01

    The current instability is studied in high-temperature superconducting current-carrying elements with I- V characteristics described by power or exponential equations. Stability analysis of the macroscopic states is carried out in terms of a stationary zero-dimensional model. In linear temperature approximation criteria are derived that allow one to find the maximum allowable values of the induced current, induced electric field intensity, and overheating of the superconductor. A condition is formulated for the complete thermal stabilization of the superconducting composite with regard to the nonlinearity of its I- V characteristic. It is shown that both subcritical and supercritical stable states may arise. In the latter case, the current and electric field intensity are higher than the preset critical parameters of the superconductor. Conditions for these states depending on the properties of the matrix, superconductor's critical current, fill factor, and nonlinearity of the I- V characteristic are discussed. The obtained results considerably augment the class of allowable states for high-temperature superconductors: it is demonstrated that there exist stable resistive conditions from which superconductors cannot pass to the normal state even if the parameters of these conditions are supercritical.

  11. Experimental and theoretical studies of a high temperature cesium-barium tacitron, with application to low voltage-high current inversion. Final report, April 1, 1993--February 28, 1994

    Energy Technology Data Exchange (ETDEWEB)

    Murray, C.S.; El-Genk, M.S.

    1994-02-01

    A low voltage/high current switch refer-red as ``Cs-Ba tacitron`` is studied for use as a dc to ac inverter in high temperature and/or ionizing radiation environments. The operational characteristics of the Cs-Ba tacitron as a switch were investigated experimentally in three modes: (a) breakdown mode, (b) I-V mode, and (c) current modulation mode. Operation parameters measured include switching frequencies up to 20 kHz, hold-off voltages up to 200 V, current densities in excess of 15 A/CM{sup 2}, switch power density of 1 kW/cm{sup 2}, and a switching efficiency in excess of 90 % at collector voltages greater than 30 V. Also, if the discharge current is circuit limited to a value below the maximum thermal emission current density, the voltage drop is constant and below 3 V.

  12. Temperature- and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation

    Science.gov (United States)

    Xu, Hao; Yang, Hong; Wang, Yan-Rong; Wang, Wen-Wu; Luo, Wei-Chun; Qi, Lu-Wei; Li, Jun-Feng; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

    2016-08-01

    High-k metal gate stacks are being used to suppress the gate leakage due to tunneling for sub-45 nm technology nodes. The reliability of thin dielectric films becomes a limitation to device manufacturing, especially to the breakdown characteristic. In this work, a breakdown simulator based on a percolation model and the kinetic Monte Carlo method is set up, and the intrinsic relation between time to breakdown and trap generation rate R is studied by TDDB simulation. It is found that all degradation factors, such as trap generation rate time exponent m, Weibull slope β and percolation factor s, each could be expressed as a function of trap density time exponent α. Based on the percolation relation and power law lifetime projection, a temperature related trap generation model is proposed. The validity of this model is confirmed by comparing with experiment results. For other device and material conditions, the percolation relation provides a new way to study the relationship between trap generation and lifetime projection. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

  13. High voltage load resistor array

    Energy Technology Data Exchange (ETDEWEB)

    Lehmann, Monty Ray [Smithfield, VA

    2005-01-18

    A high voltage resistor comprising an array of a plurality of parallel electrically connected resistor elements each containing a resistive solution, attached at each end thereof to an end plate, and about the circumference of each of the end plates, a corona reduction ring. Each of the resistor elements comprises an insulating tube having an electrode inserted into each end thereof and held in position by one or more hose clamps about the outer periphery of the insulating tube. According to a preferred embodiment, the electrode is fabricated from stainless steel and has a mushroom shape at one end, that inserted into the tube, and a flat end for engagement with the end plates that provides connection of the resistor array and with a load.

  14. Applications of high-temperature superconductors in power technology[8470 High-current and high-voltage technology: power systems; power transmission lines and cables;

    Energy Technology Data Exchange (ETDEWEB)

    Hull, John R [Energy Technology Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2003-11-01

    Since the discovery of the first high-temperature superconductors (HTSs) in the late 1980s, many materials and families of materials have been discovered that exhibit superconductivity at temperatures well above 20 K. Of these, several families of HTSs have been developed for use in electrical power applications. Demonstration of devices such as motors, generators, transmission lines, transformers, fault-current limiters, and flywheels in which HTSs and bulk HTSs have been used has proceeded to ever larger scales. First-generation wire, made from bismuth-based copper oxides, was used in many demonstrations. The rapid development of second-generation wire, made by depositing thin films of yttrium-based copper oxide on metallic substrates, is expected to further accelerate commercial applications. Bulk HTSs, in which large single-grain crystals are used as basic magnetic components, have also been developed and have potential for electrical power applications.

  15. Current-voltage-temperature characteristics of DNA origami

    Energy Technology Data Exchange (ETDEWEB)

    Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M [Department of Chemical Engineering, Texas A and M University, College Station, TX 77843 (United States); Zhong Hong; Norton, Michael L [Department of Chemistry, Marshall University, Huntington, WV 25755 (United States); Sinitskii, Alexander [Department of Chemistry, Rice University, Houston, TX 77005 (United States)

    2009-04-29

    The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of {approx}0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

  16. Characterisation of the VELO High Voltage System

    CERN Document Server

    Rakotomiaramanana, B; Eklund, L

    2008-01-01

    The high voltage system supplies the bias voltage to the 88 silicon sensors which comprise the LHCb Vertex Locator (VELO). This note describes the results of the tests which have been performed on the hardware of the high voltage system of the VELO. Each individual test detailed in this note corresponds to a specific requirement of the system. These requirements arise primarily from ensuring the safety of the silicon sensors and the quality of the data taken from the VELO modules. The tests performed are in four categories: normal operation of the high voltage system; vercation of its stability under operation; discussion of its behaviour in failure modes; and details of operation at low voltage. Noteworthy issues, identified through the tests, include the behaviour of the high voltage modules at voltages below 9V, the current limit that can be applied during ramping of the voltage, and the speed with which the voltage is cut during failures of the system. The results of these tests provide high confidence th...

  17. Characterisation of the VELO High Voltage System

    CERN Document Server

    Rakotomiaramanana, B; Parkes, C; Eklund, L

    2008-01-01

    The high voltage system supplies the bias voltage to the 88 silicon sensors which comprise the LHCb Vertex Locator (VELO). This note describes the results of the tests which have been performed on the hardware of the high voltage system of the VELO. Each individual test detailed in this note corresponds to a specific requirement of the system. These requirements arise primarily from ensuring the safety of the silicon sensors and the quality of the data taken from the VELO modules. The tests performed are in four categories: normal operation of the high voltage system; verification of its stability under operation; discussion of its behaviour in failure modes; and details of operation at low voltage. Noteworthy issues, identified through the tests, include the behaviour of the high voltage modules at voltages below 9V, the current limit that can be applied during ramping of the voltage, and the speed with which the voltage is cut during failures of the system. The results of these tests provide high confidence...

  18. High-voltage engineering and testing

    CERN Document Server

    Ryan, Hugh M

    2013-01-01

    This 3rd edition of High Voltage Engineering Testing describes strategic developments in the field and reflects on how they can best be managed. All the key components of high voltage and distribution systems are covered including electric power networks, UHV and HV. Distribution systems including HVDC and power electronic systems are also considered.

  19. Planar LTCC transformers for high voltage flyback converters.

    Energy Technology Data Exchange (ETDEWEB)

    Schofield, Daryl (NASCENT Technology Inc. , Watertown, SD); Schare, Joshua M.; Glass, Sarah Jill; Roesler, Alexander William; Ewsuk, Kevin Gregory; Slama, George (NASCENT Technology Inc. , Watertown, SD); Abel, Dave (NASCENT Technology Inc. , Watertown, SD)

    2007-06-01

    This paper discusses the design and use of low-temperature (850 C to 950 C) co-fired ceramic (LTCC) planar magnetic flyback transformers for applications that require conversion of a low voltage to high voltage (> 100V) with significant volumetric constraints. Measured performance and modeling results for multiple designs showed that the LTCC flyback transformer design and construction imposes serious limitations on the achievable coupling and significantly impacts the transformer performance and output voltage. This paper discusses the impact of various design factors that can provide improved performance by increasing transformer coupling and output voltage. The experiments performed on prototype units demonstrated LTCC transformer designs capable of greater than 2 kV output. Finally, the work investigated the effect of the LTCC microstructure on transformer insulation. Although this paper focuses on generating voltages in the kV range, the experimental characterization and discussion presented in this work applies to designs requiring lower voltage.

  20. High Voltage Power Transmission for Wind Energy

    Science.gov (United States)

    Kim, Young il

    The high wind speeds and wide available area at sea have recently increased the interests on offshore wind farms in the U.S.A. As offshore wind farms become larger and are placed further from the shore, the power transmission to the onshore grid becomes a key feature. Power transmission of the offshore wind farm, in which good wind conditions and a larger installation area than an onshore site are available, requires the use of submarine cable systems. Therefore, an underground power cable system requires unique design and installation challenges not found in the overhead power cable environment. This paper presents analysis about the benefit and drawbacks of three different transmission solutions: HVAC, LCC/VSC HVDC in the grid connecting offshore wind farms and also analyzed the electrical characteristics of underground cables. In particular, loss of HV (High Voltage) subsea power of the transmission cables was evaluated by the Brakelmann's theory, taking into account the distributions of current and temperature.

  1. Compact, Lightweight, High Voltage Propellant Isolators Project

    Data.gov (United States)

    National Aeronautics and Space Administration — TA&T, Inc. proposes an enabling fabrication process for high voltage isolators required in high power solar electric and nuclear electric propulsion (SEP and...

  2. Compact, Lightweight, High Voltage Propellant Isolators Project

    Data.gov (United States)

    National Aeronautics and Space Administration — TA&T, Inc. proposes an enabling fabrication process for high voltage isolators required in high power solar electric and nuclear electric propulsion (SEP and...

  3. High voltage electricity installations a planning perspective

    CERN Document Server

    Jay, Stephen Andrew

    2006-01-01

    The presence of high voltage power lines has provoked widespread concern for many years. High Voltage Electricity Installations presents an in-depth study of policy surrounding the planning of high voltage installations, discussing the manner in which they are percieved by the public, and the associated environmental issues. An analysis of these concerns, along with the geographical, environmental and political influences that shape their expression, is presented. Investigates local planning policy in an area of the energy sector that is of highly topical environmental and public concern Cover

  4. Radiatively heated high voltage pyroelectric crystal pulser

    Energy Technology Data Exchange (ETDEWEB)

    Antolak, A.J., E-mail: antolak@sandia.gov [Sandia National Laboratories, Livermore, CA 94550 (United States); Chen, A.X. [Sandia National Laboratories, Livermore, CA 94550 (United States); Leung, K.-N. [Sandia National Laboratories, Livermore, CA 94550 (United States); Nuclear Engineering Department, University of California, Berkeley (United States); Morse, D.H.; Raber, T.N. [Sandia National Laboratories, Livermore, CA 94550 (United States)

    2014-01-21

    Thin lithium tantalate pyroelectric crystals in a multi-stage pulser were heated by quartz lamps during their charging phase to generate high voltage pulses. The charging voltage was determined empirically based on the measured breakdown voltage in air and verified by the induced breakdown voltage of an external high voltage power supply. A four-stage pyroelectric crystal device generated pulse discharges of up to 86 kV using both quartz lamps (radiative) and thermoelectric (conductive) heating. Approximately 50 mJ of electrical energy was harvested from the crystals when radiatively heated in air, and up to 720 mJ was produced when the crystals were submerged in a dielectric fluid. It is anticipated that joule-level pulse discharges could be obtained by employing additional stages and optimizing the heating configuration.

  5. Enhanced Model of Nonlinear Spiral High Voltage Divider

    Directory of Open Access Journals (Sweden)

    V. Panko

    2015-04-01

    Full Text Available This paper deals with the enhanced accurate DC and RF model of nonlinear spiral polysilicon voltage divider. The high resistance polysilicon divider is a sensing part of the high voltage start-up MOSFET transistor that can operate up to 700 V. This paper presents the structure of a proposed model, implemented voltage, frequency and temperature dependency, and scalability. A special attention is paid to the ability of the created model to cover the mismatch and influence of a variation of process parameters on the device characteristics. Finally, the comparison of measured data vs. simulation is presented in order to confirm the model validity and a typical application is demonstrated.

  6. High voltage and electrical insulation engineering

    CERN Document Server

    Arora, Ravindra

    2011-01-01

    "The book is written for students as well as for teachers and researchers in the field of High Voltage and Insulation Engineering. It is based on the advance level courses conducted at TU Dresden, Germany and Indian Institute of Technology Kanpur, India. The book has a novel approach describing the fundamental concept of field dependent behavior of dielectrics subjected to high voltage. There is no other book in the field of high voltage engineering following this new approach in describing the behavior of dielectrics. The contents begin with the description of fundamental terminology in the subject of high voltage engineering. It is followed by the classification of electric fields and the techniques of field estimation. Performance of gaseous, liquid and solid dielectrics under different field conditions is described in the subsequent chapters. Separate chapters on vacuum as insulation and the lightning phenomenon are included"--

  7. 一种高电源抑制比全工艺角低温漂CMOS基准电压源%A bandgap voltage reference with high PSRR and low temperature drift at the all process corners

    Institute of Scientific and Technical Information of China (English)

    方圆; 周凤星; 张涛; 张迪

    2012-01-01

    A bandgap voltage reference circuit which has high PSRR and low temperature drift at all Process Corners was presented based on SMIC's 0.35μm CMOS process. First, a high PSRR voltage reference is amplified by a voltage amplifier to get a stabilized voltage, which then is provided to bandgap core as power supply, so as to get high PSRR. Besides, set the key resistor tunable to adjust the positive voltage temperature coefficient, so as to meeting the negative voltage temperature coefficient change under different processes, and ultimately getting a bandgap voltage reference with low temperature coefficient at all processe. Cadence virtuoso simulation results showed that the circuit had a PSRR -109 dB (10 Hz)and --64 dB (10 kHz) at 27℃ and a temperature coefficient below 3.2×10^-6/℃ at all processes under 4 V supply voltage from-40-80℃.%基于SMIC0.35μm的CMOS工艺.设计了一种高电源抑制比,同时可在全工艺角下的得到低温漂的带隙基准电路。首先采用一个具有高电源抑制比的基准电压。通过电压放大器放大得到稳定的电压,以提供给带隙核心电路作为供电电源.从而提高了电源抑制比。另外,将电路中的关键电阻设置为可调电阻,从而可以改变正温度电压的系数,以适应不同工艺下负温度系数的变化,最终得到在全工艺角下低温漂的基准电压。Cadencevirtuoso仿真表明:在27℃下.10Hz时电源抑制比(ISRR)-109dB,10kHz时(esRR)达到-64dB;在4V电源电压下,在-40~80℃范围内的不同工艺角下.温度系数均可达到5.6×10^-6 V/℃以下。

  8. Experimental validation of prototype high voltage bushing

    Science.gov (United States)

    Shah, Sejal; Tyagi, H.; Sharma, D.; Parmar, D.; M. N., Vishnudev; Joshi, K.; Patel, K.; Yadav, A.; Patel, R.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A.

    2017-08-01

    Prototype High voltage bushing (PHVB) is a scaled down configuration of DNB High Voltage Bushing (HVB) of ITER. It is designed for operation at 50 kV DC to ensure operational performance and thereby confirming the design configuration of DNB HVB. Two concentric insulators viz. Ceramic and Fiber reinforced polymer (FRP) rings are used as double layered vacuum boundary for 50 kV isolation between grounded and high voltage flanges. Stress shields are designed for smooth electric field distribution. During ceramic to Kovar brazing, spilling cannot be controlled which may lead to high localized electrostatic stress. To understand spilling phenomenon and precise stress calculation, quantitative analysis was performed using Scanning Electron Microscopy (SEM) of brazed sample and similar configuration modeled while performing the Finite Element (FE) analysis. FE analysis of PHVB is performed to find out electrical stresses on different areas of PHVB and are maintained similar to DNB HV Bushing. With this configuration, the experiment is performed considering ITER like vacuum and electrical parameters. Initial HV test is performed by temporary vacuum sealing arrangements using gaskets/O-rings at both ends in order to achieve desired vacuum and keep the system maintainable. During validation test, 50 kV voltage withstand is performed for one hour. Voltage withstand test for 60 kV DC (20% higher rated voltage) have also been performed without any breakdown. Successful operation of PHVB confirms the design of DNB HV Bushing. In this paper, configuration of PHVB with experimental validation data is presented.

  9. A novel voltage output integrated circuit temperature sensor

    Institute of Scientific and Technical Information of China (English)

    吴晓波; 方志刚; 等

    2002-01-01

    The novel integrated circuit(IC) temperature sensor presented in this paper works similarly as a two-terminal Zener,has breakdown voltage directly proportional to Kelvin temperature at 10mV/℃,with typical error of less tha ±1.0℃ over a temperature range from-50℃to +120℃ .In addition to all the features that conventional IC temperature sensors have,the new device also has very low static power dissipation(0.5mW),low output impedance(less than 1Ω),execllent stability,high reproducibility,and high precision.The sensor's circuit design and layout are discussed in detail.Applications of the sensor include almost and type of temperature sensing over the range of -50℃-+125℃。The low impedance and linear output of the device make interfacing the readout or control circuitry especially easy.Due to the excellent performance and low cost of this sensor.more application of the sensor over wide temperature range are expected.

  10. A novel voltage output integrated circuit temperature sensor

    Institute of Scientific and Technical Information of China (English)

    吴晓波; 赵梦恋; 严晓浪; 方志刚

    2002-01-01

    The novel integrated circuit (IC) temperature sensor presented in this paper works similarly as a two-terminal Zener, has breakdown voltage directly proportional to Kelvin temperature at 10 mV/℃, with typical error of less than ±1.0℃ over a temperature range from -50℃ to +125℃. In addition to all the features that conventional IC temperature sensors have, the new device also has very low static power dissipation ( 0.5 mW ) , low output impedance ( less than 1Ω), excellent stability, high reproducibility, and high precision. The sensor's circuit design and layout are discussed in detail. Applications of the sensor include almost any type of temperature sensing over the range of -50℃-+125℃. The low impedance and linear output of the device make interfacing the readout or control circuitry especially easy. Due to the excellent performance and low cost of this sensor, more applications of the sensor over wide temperature range are expected.

  11. Programmable high voltage power supply with regulation confined to the high voltage section

    Science.gov (United States)

    Castell, Karen D. (Inventor); Ruitberg, Arthur P. (Inventor)

    1994-01-01

    A high voltage power supply in a dc-dc converter configuration includes a pre-regulator which filters and regulates the dc input and drives an oscillator which applies, in turn, a low voltage ac signal to the low side of a step-up high voltage transformer. The high voltage side of the transformer drives a voltage multiplier which provides a stepped up dc voltage to an output filter. The output voltage is sensed by a feedback network which then controls a regulator. Both the input and output of the regulator are on the high voltage side, avoiding isolation problems. The regulator furnishes a portion of the drive to the voltage multiplier, avoiding having a regulator in series with the load with its attendant, relatively high power losses. This power supply is highly regulated, has low power consumption, a low parts count and may be manufactured at low cost. The power supply has a programmability feature that allows for the selection of a large range of output voltages.

  12. Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

    Science.gov (United States)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2012-01-01

    We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

  13. 基于ZigBee的高压带电体温度在线监测系统%ZigBee-based temperature monitoring on-line system of high-voltage live parts

    Institute of Scientific and Technical Information of China (English)

    滕志军; 屈银龙; 王中宝; 杨旭

    2011-01-01

    在现代电力系统中,高压带电体温度监测已经成为电气设备安全运行所面临的实际问题.本文提出了以zigBee无线传感器网络为核心,以以太网为骨干网,采用CC2430芯片为传感器控制核心的高压带电体温度测量方案.试验证明,系统能够实时监测高压带电体温度变化,工作稳定可靠、具有较高的实用性和市场价值.%In modern power system, the temperature monitoring of high-voltage live parts has become one of practical problems in the safe operation of electrical equipment. This paper proposes a high-voltage live parts temperature measurement that includes ZigBee wireless sensor networks as the core, Ethernet as the backbone and CC2430 chip as the sensor control core. ZigBee network of the system runs on 2.4GHz free frequency band. When tree topology is used to build system network, the maximum root depth is 5. The network can monitor the high-voltage live parts within 150m radius circular area in real time. The system network is scalable and can support up to 65,535 nodes. The system temperature monitoring range is -55℃ ~ + 125℃ with 14 bits resolution. When the range of monitoring temperature is - 10℃ ~ + 85℃, accuracy can be achieved within ± 0. 5℃. Through the experiment, the realtime temperature monitoring system of high-voltage live parts not only is stable and reliable but also has high availability and market value.

  14. High voltage testing for the MAJORANA DEMONSTRATOR

    Energy Technology Data Exchange (ETDEWEB)

    Abgrall, N. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Arnquist, I.J. [Pacific Northwest National Laboratory, Richland, WA (United States); Avignone, F.T. [Department of Physics and Astronomy, University of South Carolina, Columbia, SC (United States); Oak Ridge National Laboratory, Oak Ridge, TN (United States); Barabash, A.S. [National Research Center “Kurchatov Institute” Institute for Theoretical and Experimental Physics, Moscow (Russian Federation); Bertrand, F.E. [Oak Ridge National Laboratory, Oak Ridge, TN (United States); Bradley, A.W. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Brudanin, V. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Busch, M. [Department of Physics, Duke University, Durham, NC (United States); Triangle Universities Nuclear Laboratory, Durham, NC (United States); Buuck, M. [Center for Experimental Nuclear Physics and Astrophysics, and Department of Physics, University of Washington, Seattle, WA (United States); Byram, D. [Department of Physics, University of South Dakota, Vermillion, SD (United States); Caldwell, A.S. [South Dakota School of Mines and Technology, Rapid City, SD (United States); Chan, Y-D. [Nuclear Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Christofferson, C.D. [South Dakota School of Mines and Technology, Rapid City, SD (United States); Chu, P.-H. [Los Alamos National Laboratory, Los Alamos, NM (United States); Cuesta, C., E-mail: ccuesta@uw.edu [Center for Experimental Nuclear Physics and Astrophysics, and Department of Physics, University of Washington, Seattle, WA (United States); Detwiler, J.A.; Doe, P.J. [Center for Experimental Nuclear Physics and Astrophysics, and Department of Physics, University of Washington, Seattle, WA (United States); and others

    2016-07-01

    The MAJORANA Collaboration is constructing the MAJORANA DEMONSTRATOR, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in {sup 76}Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the MAJORANA DEMONSTRATOR. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the MAJORANA DEMONSTRATOR was characterized and the micro-discharge effects during the MAJORANA DEMONSTRATOR commissioning phase were studied. A stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.

  15. High voltage testing for the MAJORANA DEMONSTRATOR

    Science.gov (United States)

    Abgrall, N.; Arnquist, I. J.; Avignone, F. T.; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Byram, D.; Caldwell, A. S.; Chan, Y.-D.; Christofferson, C. D.; Chu, P.-H.; Cuesta, C.; Detwiler, J. A.; Doe, P. J.; Dunagan, C.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Fu, Z.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Henning, R.; Hoppe, E. W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K. J.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; LaFerriere, B. D.; Leon, J.; Li, A.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Orrell, J. L.; O'Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Rielage, K.; Robertson, R. G. H.; Romero-Romero, E.; Shanks, B.; Shirchenko, M.; Snyder, N.; Suriano, A. M.; Tedeschi, D.; Thompson, A.; Ton, K. T.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C.-H.; Yumatov, V.

    2016-07-01

    The MAJORANA Collaboration is constructing the MAJORANA DEMONSTRATOR, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the MAJORANA DEMONSTRATOR. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the MAJORANA DEMONSTRATOR was characterized and the micro-discharge effects during the MAJORANA DEMONSTRATOR commissioning phase were studied. A stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.

  16. High voltage testing for the Majorana Demonstrator

    Energy Technology Data Exchange (ETDEWEB)

    Abgrall, N.; Arnquist, Isaac J.; Avignone, F. T.; Barabash, A.; Bertrand, F.; Bradley, A. W.; Brudanin, V.; Busch, Matthew; Buuck, M.; Byram, D.; Caldwell, A. S.; Chan, Yuen-Dat; Christofferson, C. D.; Chu, Pamela M.; Cuesta, C.; Detwiler, Jason A.; Doe, P. J.; Dunagan, C.; Efremenko, Yuri; Ejiri, H.; Elliott, S. R.; Fu, Z.; Galindo-Uribarri, A.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I.; Guiseppe, V. E.; Henning, R.; Hoppe, Eric W.; Howard, S.; Howe, M. A.; Jasinski, B. R.; Keeter, K.; Kidd, M. F.; Konovalov, S.; Kouzes, Richard T.; Laferriere, Brian D.; Leon, Jonathan D.; Li, Alexander D.; MacMullin, J.; Martin, R. D.; Massarcyk, R.; Meijer, S. J.; Mertens, S.; Orrell, John L.; O' Shaughnessy, C.; Poon, Alan W.; Radford, D. C.; Rager, J.; Rielage, Keith; Robertson, R. G. H.; Romero Romo, M.; Shanks, B.; Shirchenko, M.; Snyder, N.; Suriano, Anne-Marie E.; Tedeschi, D.; Thompson, Andrew; Ton, K. T.; Trimble, J. E.; Varner, R. L.; Vasilyev, Sergey; Vetter, Kai; Vorren, Kris R.; White, Brandon R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, Chang-Hong; Yumatov, V.

    2016-07-01

    The Majorana Collaboration is constructing theMajorana Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in 76Ge. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of theMajorana Demonstrator. This effect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path, including different improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the Majorana Demonstrator was characterized and the micro-discharge effects during theMajorana Demonstrator commissioning phase were studied. A stable configuration has been achieved, and the cables and connectors can supply HPGe detector operating voltages without exhibiting discharge.

  17. 76 FR 70721 - Voltage Coordination on High Voltage Grids; Notice of Staff Workshop

    Science.gov (United States)

    2011-11-15

    ... Energy Regulatory Commission Voltage Coordination on High Voltage Grids; Notice of Staff Workshop Take notice that the Federal Energy Regulatory Commission will hold a Workshop on Voltage Coordination on High Voltage Grids on Thursday, December 1, 2011 from 9 a.m. to 4:30 p.m. This staff-led workshop will be...

  18. Modeling of long High Voltage AC Underground

    DEFF Research Database (Denmark)

    Gudmundsdottir, Unnur Stella; Bak, Claus Leth; Wiechowski, W. T.

    2010-01-01

    This paper presents the work and findings of a PhD project focused on accurate high frequency modelling of long High Voltage AC Underground cables. The project is cooperation between Aalborg University and Energinet.dk. The objective of the project is to investigate the accuracy of most up to date...

  19. High-voltage test and measuring techniques

    CERN Document Server

    Hauschild, Wolfgang

    2014-01-01

    It is the intent of this book to combine high-voltage (HV) engineering with HV testing technique and HV measuring technique. Based on long-term experience gained by the authors as lecturer and researcher as well as member in international organizations, such as IEC and CIGRE, the book will reflect the state of the art as well as the future trends in testing and diagnostics of HV equipment to ensure a reliable generation, transmission and distribution of electrical energy. The book is intended not only for experts but also for students in electrical engineering and high-voltage engineering.

  20. A novel imidazole-based electrolyte additive for improved electrochemical performance at elevated temperature of high-voltage LiNi0.5Mn1.5O4 cathodes

    Science.gov (United States)

    Rong, Haibo; Xu, Mengqing; Xie, Boyuan; Lin, Haibin; Zhu, Yunmin; Zheng, Xiongwen; Huang, Weizhao; Liao, Youhao; Xing, Lidan; Li, Weishan

    2016-10-01

    A novel electrolyte additive, 1,1‧-sulfonyldiimidazole (SDM), is firstly reported to improve the cycling performance of LiNi0.5Mn1.5O4 at high voltage and elevated temperature (55 °C). Linear sweep voltammetry (LSV), initial differential capacity vs. voltage, and computation results indicate that SDM is oxidized at a lower potential than the solvents of the electrolyte. Coulombic efficiency and capacity retention of a Li/LiNi0.5Mn1.5O4 cell can be significantly enhanced in the presence of SDM, and moreover cells with SDM deliver lower impedance after 100 cycles at elevated temperature. To better understand the functional mechanism of the enhanced performance with incorporation of SDM in the electrolyte, ex-situ analytical techniques, including scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), and inductively coupled plasma mass spectrometry (ICP-MS) are employed to gain insight into the reaction mechanism of SDM on the LiNi0.5Mn1.5O4 electrode at high voltage and elevated temperature (55 °C). Surface analysis reveals that the improved electrochemical performance of the cells can be ascribed to the highly stable surface layer generated by SDM, which thus mitigates the detrimental decomposition of the electrolyte occurring and stabilizes the interphase of spinel LiNi0.5Mn1.5O4 cathode while cycling at high voltage and elevated temperature.

  1. High voltage testing for the MAJORANA Demonstrator

    CERN Document Server

    Abgrall, N; Avignone, F T; Barabash, A S; Bertrand, F E; Bradley, A W; Brudanin, V; Busch, M; Buuck, M; Byram, D; Caldwell, A S; Chan, Y-D; Christofferson, C D; Chu, P -H; Cuesta, C; Detwiler, J A; Doe, P J; Dunagan, C; Efremenko, Yu; Ejiri, H; Elliott, S R; Fu, Z; Galindo-Uribarri, A; Giovanetti, G K; Goett, J; Green, M P; Gruszko, J; Guinn, I S; Guiseppe, V E; Henning, R; Hoppe, E W; Howard, S; Howe, M A; Jasinski, B R; Keeter, K J; Kidd, M F; Konovalov, S I; Kouzes, R T; LaFerriere, B D; Leon, J; Li, A; MacMullin, J; Martin, R D; Massarczyk, R; Meijer, S J; Mertens, S; Orrell, J L; O'Shaughnessy, C; Poon, A W P; Radford, D C; Rager, J; Rielage, K; Robertson, R G H; Romero-Romero, E; Shanks, B; Shirchenko, M; Snyder, N; Suriano, A M; Tedeschi, D; Thompson, A; Ton, K T; Trimble, J E; Varner, R L; Vasilyev, S; Vetter, K; Vorren, K; White, B R; Wilkerson, J F; Wiseman, C; Xu, W; Yakushev, E; Yu, C -H; Yumatov, V

    2016-01-01

    The MAJORANA Collaboration is constructing the MAJORANA Demonstrator, an ultra-low background, 44-kg modular high-purity Ge (HPGe) detector array to search for neutrinoless double-beta decay in Ge-76. The phenomenon of surface micro-discharge induced by high-voltage has been studied in the context of the MAJORANA Demonstrator. This eff?ect can damage the front-end electronics or mimic detector signals. To ensure the correct performance, every high-voltage cable and feedthrough must be capable of supplying HPGe detector operating voltages as high as 5 kV without exhibiting discharge. R&D measurements were carried out to understand the testing system and determine the optimum design configuration of the high-voltage path, including diff?erent improvements of the cable layout and feedthrough flange model selection. Every cable and feedthrough to be used at the MAJORANA Demonstrator was characterized and the micro-discharge eff?ects during the MAJORANA Demonstrator commissioning phase were studied. A stable c...

  2. Modular high voltage power supply for chemical analysis

    Science.gov (United States)

    Stamps, James F.; Yee, Daniel D.

    2008-07-15

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  3. Planar multijunction high voltage solar cells

    Science.gov (United States)

    Evans, J. C., Jr.; Chai, A. T.; Goradia, C.

    1980-01-01

    Technical considerations, preliminary results, and fabrication details are discussed for a family of high-voltage planar multi-junction (PMJ) solar cells which combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

  4. The VELO High Voltage System Control Software

    CERN Document Server

    Rakotomiaramanana, B; Eklund, L; De Capua, S

    2010-01-01

    This note describes the VELO high voltage control software. The implementation of its structure as a PVSS Finite State Machine is emphasized. The main error conditions that may occur during operation is also discussed. The VELO HV software conforms to the specification of the VELO.

  5. An Inexpensive Source of High Voltage

    Science.gov (United States)

    Saraiva, Carlos

    2012-01-01

    As a physics teacher I like recycling old apparatus and using them for demonstrations in my classes. In physics laboratories in schools, sources of high voltage include induction coils or electronic systems that can be bought from companies that sell lab equipment. But these sources can be very expensive. In this article, I will explain how you…

  6. High Temperature Capacitor Development

    Energy Technology Data Exchange (ETDEWEB)

    John Kosek

    2009-06-30

    The absence of high-temperature electronics is an obstacle to the development of untapped energy resources (deep oil, gas and geothermal). US natural gas consumption is projected to grow from 22 trillion cubic feet per year (tcf) in 1999 to 34 tcf in 2020. Cumulatively this is 607 tcf of consumption by 2020, while recoverable reserves using current technology are 177 tcf. A significant portion of this shortfall may be met by tapping deep gas reservoirs. Tapping these reservoirs represents a significant technical challenge. At these depths, temperatures and pressures are very high and may require penetrating very hard rock. Logistics of supporting 6.1 km (20,000 ft) drill strings and the drilling processes are complex and expensive. At these depths up to 50% of the total drilling cost may be in the last 10% of the well depth. Thus, as wells go deeper it is increasingly important that drillers are able to monitor conditions down-hole such as temperature, pressure, heading, etc. Commercial off-the-shelf electronics are not specified to meet these operating conditions. This is due to problems associated with all aspects of the electronics including the resistors and capacitors. With respect to capacitors, increasing temperature often significantly changes capacitance because of the strong temperature dependence of the dielectric constant. Higher temperatures also affect the equivalent series resistance (ESR). High-temperature capacitors usually have low capacitance values because of these dielectric effects and because packages are kept small to prevent mechanical breakage caused by thermal stresses. Electrolytic capacitors do not operate at temperatures above 150oC due to dielectric breakdown. The development of high-temperature capacitors to be used in a high-pressure high-temperature (HPHT) drilling environment was investigated. These capacitors were based on a previously developed high-voltage hybridized capacitor developed at Giner, Inc. in conjunction with a

  7. Improved Lifetime High Voltage Switch Electrode.

    Science.gov (United States)

    2014-09-26

    capabilities of spark switches (e.g., saturable magnetic reactors, ignitions, and high power vacuum tubes), none has the combined high voltage, high...series impedance of the switch . Additionally, the eroded material may be deposited on internal insulators , thereby inducing pretriggering and erratic...of dry air, a typical spark switch insulating gas. -7- ENERGETIC IONS FROM ION IMPLANTER 0 0 0 0 -0 0 00000 0 0 oSUBSTRATE 0 - 0 o 0 SAMPLE= ’ 0• 0 U 0

  8. 30 CFR 75.804 - Underground high-voltage cables.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Underground high-voltage cables. 75.804 Section... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance...

  9. 30 CFR 77.810 - High-voltage equipment; grounding.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage equipment; grounding. 77.810... COAL MINES Surface High-Voltage Distribution § 77.810 High-voltage equipment; grounding. Frames, supporting structures, and enclosures of stationary, portable, or mobile high-voltage equipment shall...

  10. Temperature and voltage measurement in quantum systems far from equilibrium

    Science.gov (United States)

    Shastry, Abhay; Stafford, Charles A.

    2016-10-01

    We show that a local measurement of temperature and voltage for a quantum system in steady state, arbitrarily far from equilibrium, with arbitrary interactions within the system, is unique when it exists. This is interpreted as a consequence of the second law of thermodynamics. We further derive a necessary and sufficient condition for the existence of a solution. In this regard, we find that a positive temperature solution exists whenever there is no net population inversion. However, when there is a net population inversion, we may characterize the system with a unique negative temperature. Voltage and temperature measurements are treated on an equal footing: They are simultaneously measured in a noninvasive manner, via a weakly coupled thermoelectric probe, defined by requiring vanishing charge and heat dissipation into the probe. Our results strongly suggest that a local temperature measurement without a simultaneous local voltage measurement, or vice versa, is a misleading characterization of the state of a nonequilibrium quantum electron system. These results provide a firm mathematical foundation for voltage and temperature measurements far from equilibrium.

  11. Process, Voltage and Temperature Compensation Technique for Cascode Modulated PAs

    DEFF Research Database (Denmark)

    Sira, Daniel; Larsen, Torben

    2013-01-01

    This paper presents a process, voltage and temperature (PVT) compensation method for a cascode modulated polar power amplifier (PA). It is shown that it is possible to create a baseband replica circuit of the PA that has the same AM-AM nonlinearity as the PA itself. The replica circuit, that repr......This paper presents a process, voltage and temperature (PVT) compensation method for a cascode modulated polar power amplifier (PA). It is shown that it is possible to create a baseband replica circuit of the PA that has the same AM-AM nonlinearity as the PA itself. The replica circuit...

  12. High voltage pulse generator. [Patent application

    Science.gov (United States)

    Fasching, G.E.

    1975-06-12

    An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

  13. High Voltage Design Guide. Volume V. Spacecraft

    Science.gov (United States)

    1983-01-01

    connector are soldered, with the possible exception of very high voltage points. Even then rudimentary connectors such as that shown In figura 13 ar used...addition, large stresses will be imposed on the struc- tural (high resistance) member. This conductor movement will flex and stretch the conductors, placing...materials used for airplane systems provided they meet the electrical, chemical, and mechanical characteristic requirements imposed by the design

  14. High Efficiency Power Converter for Low Voltage High Power Applications

    DEFF Research Database (Denmark)

    Nymand, Morten

    , and remote power generation for light towers, camper vans, boats, beacons, and buoys etc. A review of current state-of-the-art is presented. The best performing converters achieve moderately high peak efficiencies at high input voltage and medium power level. However, system dimensioning and cost are often......The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based...... determined by the performance at the system worst case operating point which is usually at minimum input voltage and maximum power. Except for the non-regulating V6 converters, all published solutions exhibit a very significant drop in conversion efficiency at minimum input voltage and maximum output power...

  15. High voltage source control on FODS

    Science.gov (United States)

    Patalakha, D. I.; Kalinin, A. Yu; Kulagin, N. V.

    2017-01-01

    The implementation of the high voltage power supply control system (HVPSCS) for experimental setup FODS (FOcusing Doublearmed Spectrometer) at accelerator U-70 of the Federal State Budgetary Institution State Research Center Of Russia Institute for High Energy Physics of the National Research Centre “Kurchatov Institute” (hereinafter referred to as IHEP) or for the test bench of the detector components is considered. The required set of hardware is defined and the appropriate software to operate HVPSCS is written in C/C++ codes. The date acquisition (DAQ) system [1] makes automatic control on HVPSCS for data taking run. It allows to get the dependence of appropriate detector parameters on the high voltage supply values and choose its optimal values for FODS detectors. The test run results of HVPSCS are presented.

  16. 高电源抑制比、低温飘带隙基准电压源的设计%Design of high PSRR low temperature coefficient band gap voltage reference

    Institute of Scientific and Technical Information of China (English)

    高献坤; 雷君召; 丁赪璐; 周西军; 李遂亮; 余泳昌

    2011-01-01

    Based on the TSMC 0.18μm CMOS process design kit,a band gap voltage reference circuitwith high power supply rejection ratio and low temperature coefficient is presented in this paper,where power supply voltage and output reference voltage is 3 V and 1.25 V respectively. The simulation results for this circuit using Cadence' s Spectre indicate that temperature coefficient from-40 to 125℃ is 3.5 x10-6·℃-1',and the voltage regulation is 72μV·V-1 during the supply voltage linear changed from 2.7 to 3.6 V. The circuit has good PSSR,top point reaching 89 dB,and being 45 dB at 10 kHz.%采用TSMC 0.18 μm CMOS工艺,设计了一种电源电压为3V、基准输出为1.25 V的高电源抑制比、低温度系数的带隙基准电压源电路.Cadence Spectre仿真结果表明,该基准源具有较好的温度特性,在-40~125℃温度范围内,温度系数为3.5×10-6·℃-1;电源电压在2.7~3.6V范围内波动时,电源电压调整率为72 μV·V-1;具有良好的电源电压抑制特性,最高抑制比可达89 dB,在10 kHz处可实现45 dB的电源电压抑制比.

  17. 基于ZigBee的高压带电体温度监测系统研究%Research on the Temperature Monitoring System of High Voltage Charging System Based on ZigBee

    Institute of Scientific and Technical Information of China (English)

    王云飞

    2015-01-01

    For high-voltage charged body operation often appear high temperature problem, the paper proposed based on ZigBee high-voltage charged body temperature online monitoring system, mainly introduces the basic principle of online monitoring system of temperature. Many test results show that the temperature on-line monitoring system has a small packet loss rate and packet error rate, good stability and security, and the test results are accurate, which has a certain popularization value.%针对高压带电体运转时经常出现温度过高等问题,文章提出了基于ZigBee的高压带电体温度在线监测系统,主要介绍了温度在线监测系统的基本原理。多次测试结果表明,温度在线监测系统丢包率和误包率小,稳定性和安全性好,测试结果准确度高,具有一定的推广价值。

  18. High-voltage test and measuring techniques

    Energy Technology Data Exchange (ETDEWEB)

    Hauschild, Wolfgang; Lemke, Eberhard

    2014-04-01

    Reflects the unit of both HV testing and measuring technique. Intended as an ''application guide'' for the relevant IEC standards. Refers also to future trends in HV testing and measuring technique. With numerous illustrations. It is the intent of this book to combine high-voltage (HV) engineering with HV testing technique and HV measuring technique. Based on long-term experience gained by the authors as lecturer and researcher as well as member in international organizations, such as IEC and CIGRE, the book will reflect the state of the art as well as the future trends in testing and diagnostics of HV equipment to ensure a reliable generation, transmission and distribution of electrical energy. The book is intended not only for experts but also for students in electrical engineering and high-voltage engineering.

  19. Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

    Directory of Open Access Journals (Sweden)

    Xiao-Yu Tang

    2015-01-01

    Full Text Available With the rapid development of the power integrated circuit technology, polysilicon resistors have been widely used not only in traditional CMOS circuits, but also in the high voltage applications. However, there have been few detailed reports about the polysilicon resistors’ characteristics, like voltage and temperature coefficients and breakdown behaviors which are critical parameters of high voltage applications. In this study, we experimentally find that the resistance of the polysilicon resistor with a relatively low doping concentration shows negative voltage and temperature coefficients, while that of the polysilicon resistor with a high doping concentration has positive voltage and temperature coefficients. Moreover, from the experimental results of breakdown voltages of the polysilicon resistors, it could be deduced that the breakdown of polysilicon resistors is thermally rather than electrically induced. We also proposed to add an N-type well underneath the oxide to increase the breakdown voltage in the vertical direction when the substrate is P-type doped.

  20. A high voltage programmable ramp generator

    Science.gov (United States)

    Upadhyay, J.; Joshi, M. J.; Deshpande, P. P.; Sharma, M. L.; Navathe, C. P.

    2008-05-01

    In this paper, a ramp generator with programmable slope is presented. It consists of a high voltage step generator, followed by integrator. The capacitor and inductor in the integrator are designed such that they can be varied by a microcontroller. This circuit generates two bipolar ramps with fastest speed <1ns and provides continuous speed variation from 6to30ns for a ramp of 500V. This is being developed as a part of automated streak camera for deflection of electron beam.

  1. High Voltage Switchgear Temperature Acquisition System Based on SAW Sensor Technology Analysis%基于 SAW 传感器技术的高压开关柜温度采集系统设计分析

    Institute of Scientific and Technical Information of China (English)

    郭翠玲; 高丽

    2015-01-01

    根据传统高压开关柜温度采集方法的不足,采用 SAW 传感器技术对高压开关柜进行无源无线温度采集。该系统具有温度测量、报警功能、参数设定、数据存储等功能,对温度进行远程实时在线监测,是智能电网建设的重要依据。%Based on the shortcomings of the traditional method of temperature measurement of high voltage switchgear ,the paper uses SAW sensor technology to take passive wireless temperature measurement for high voltage switchgear .T he system ,w hich has temperature measurement ,alarm function ,parameter setting ,data storage and other functions that can take real - time remote temperature online monito‐ring ,is an important basis for smart grid construction .

  2. High-Capacity, High-Voltage Composite Oxide Cathode Materials

    Science.gov (United States)

    Hagh, Nader M.

    2015-01-01

    This SBIR project integrates theoretical and experimental work to enable a new generation of high-capacity, high-voltage cathode materials that will lead to high-performance, robust energy storage systems. At low operating temperatures, commercially available electrode materials for lithium-ion (Li-ion) batteries do not meet energy and power requirements for NASA's planned exploration activities. NEI Corporation, in partnership with the University of California, San Diego, has developed layered composite cathode materials that increase power and energy densities at temperatures as low as 0 degC and considerably reduce the overall volume and weight of battery packs. In Phase I of the project, through innovations in the structure and morphology of composite electrode particles, the partners successfully demonstrated an energy density exceeding 1,000 Wh/kg at 4 V at room temperature. In Phase II, the team enhanced the kinetics of Li-ion transport and electronic conductivity at 0 degC. An important feature of the composite cathode is that it has at least two components that are structurally integrated. The layered material is electrochemically inactive; however, upon structural integration with a spinel material, the layered material can be electrochemically activated and deliver a large amount of energy with stable cycling.

  3. Performance of the Micropower Voltage Reference ADR3430 Under Extreme Temperatures

    Science.gov (United States)

    Patterson, Richard L.; Hammoud, Ahmad

    2011-01-01

    Electronic systems designed for use in space exploration systems are expected to be exposed to harsh temperatures. For example, operation at cryogenic temperatures is anticipated in space missions such as polar craters of the moon (-223 C), James Webb Space Telescope (-236 C), Mars (-140 C), Europa (-223 C), Titan (-178 C), and other deep space probes away from the sun. Similarly, rovers and landers on the lunar surface, and deep space probes intended for the exploration of Venus are expected to encounter high temperature extremes. Electronics capable of operation under extreme temperatures would not only meet the requirements of future spacebased systems, but would also contribute to enhancing efficiency and improving reliability of these systems through the elimination of the thermal control elements that present electronics need for proper operation under the harsh environment of space. In this work, the performance of a micropower, high accuracy voltage reference was evaluated over a wide temperature range. The Analog Devices ADR3430 chip uses a patented voltage reference architecture to achieve high accuracy, low temperature coefficient, and low noise in a CMOS process [1]. The device combines two voltages of opposite temperature coefficients to create an output voltage that is almost independent of ambient temperature. It is rated for the industrial temperature range of -40 C to +125 C, and is ideal for use in low power precision data acquisition systems and in battery-powered devices. Table 1 shows some of the manufacturer s device specifications.

  4. Isolated Fast High-Voltage Switching Circuit

    Science.gov (United States)

    Rizzi, Anthony

    1992-01-01

    Electrically isolated switching circuit supplies pulses at potentials up to 6.5 kV and currents up to 6.5 A, lasting as long as few microseconds. Turn-on time about 40 ns; turn-off time about 3 microseconds. Electrically isolated from control circuitry by means of fiber-optic signal coupling and isolated power supply. Electrical isolation protects both technician and equipment. This and similar circuits useful in such industrial and scientific applications as high-voltage, high-frequency test equipment; electrostatic-discharge test equipment; plasma-laboratory instrumentation; spark chambers; and electromagnetic-interference test equipment.

  5. High Voltage in Noble Liquids for High Energy Physics

    Energy Technology Data Exchange (ETDEWEB)

    Rebel, B. [Fermilab; Bernard, E. [Yale U.; Faham, C. H. [LBL, Berkeley; Ito, T. M. [Los Alamos; Lundberg, B. [Maryland U.; Messina, M. [Columbia U.; Monrabal, F. [Valencia U., IFIC; Pereverzev, S. P. [LLNL, Livermore; Resnati, F. [Zurich, ETH; Rowson, P. C. [SLAC; Soderberg, M. [Fermilab; Strauss, T. [Bern U.; Tomas, A. [Imperial Coll., London; Va' vra, J. [SLAC; Wang, H. [UCLA

    2014-08-22

    A workshop was held at Fermilab November 8-9, 2013 to discuss the challenges of using high voltage in noble liquids. The participants spanned the fields of neutrino, dark matter, and electric dipole moment physics. All presentations at the workshop were made in plenary sessions. This document summarizes the experiences and lessons learned from experiments in these fields at developing high voltage systems in noble liquids.

  6. Thermo-voltage measurements of atomic contacts at low temperature

    Directory of Open Access Journals (Sweden)

    Ayelet Ofarim

    2016-05-01

    Full Text Available We report the development of a novel method to determine the thermopower of atomic-sized gold contacts at low temperature. For these measurements a mechanically controllable break junction (MCBJ system is used and a laser source generates a temperature difference of a few kelvins across the junction to create a thermo-voltage. Since the temperature difference enters directly into the Seebeck coefficient S = −ΔV/ΔT, the determination of the temperature plays an important role. We present a method for the determination of the temperature difference using a combination of a finite element simulation, which reveals the temperature distribution of the sample, and the measurement of the resistance change due to laser heating of sensor leads on both sides next to the junction. Our results for the measured thermopower are in agreement with recent reports in the literature.

  7. Maintenance Optimization of High Voltage Substation Model

    Directory of Open Access Journals (Sweden)

    Jan Gala

    2008-01-01

    Full Text Available The real system from practice is selected for optimization purpose in this paper. We describe the real scheme of a high voltage (HV substation in different work states. Model scheme of the HV substation 22 kV is demonstrated within the paper. The scheme serves as input model scheme for the maintenance optimization. The input reliability and cost parameters of all components are given: the preventive and corrective maintenance costs, the actual maintenance period (being optimized, the failure rate and mean time to repair - MTTR.

  8. History of high-voltage ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Singer, E.

    In principle, the feldspar porcelain used for making tableware way back in the 18th century already would have been good enough for electrical purposes, especially for making high-voltage insulators. Thus, further advances in that sector were made for reasons of economy and better process engineering. This would include things like improving the material's green workability. Then, in 1918, Gilchrist and Klinefelter called attention to property changes in the raw materials triangle kaolinquartz-feldspar. Additional glass matrix increases the finished material's dielectric strength, while a larger share of kaolin improves its heat resistance, and a mixture of quartz and feldspar adds more strength.

  9. Safe epoxy encapsulant for high voltage magnetics

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, R.O.; Archer, W.E.

    1998-01-01

    This paper describes the use of Formula 456, an aliphatic amine cured epoxy for impregnating coils and high voltage transformers. Sandia has evaluated a number of MDA-free epoxy encapsulants which relied on either anhydride or other aromatic amine curing agents. The use of aliphatic amine curing agents was more recently evaluated and has resulted in the definition of Formula 456 resin. Methylene dianiline (MDA) has been used for more than 20 years as the curing agent for various epoxy formulations throughout the Department of Energy and much of industry. Sandia National Laboratories began the process of replacing MDA with other formulations because of regulations imposed by OSHA on the use of MDA. OSHA has regulated MDA because it is a suspect carcinogen. Typically the elimination of OSHA-regulated materials provides a rare opportunity to qualify new formulations in a range of demanding applications. It was important to take full advantage of that opportunity, although the associated materials qualification effort was costly. Small high voltage transformers are one of those demanding applications. The successful implementation of the new formulation for high reliability transformers will be described. The test results that demonstrate the parts are qualified for use in DOE weapon systems will be presented.

  10. Advanced High Voltage Power Device Concepts

    CERN Document Server

    Baliga, B Jayant

    2012-01-01

    Advanced High Voltage Power Device Concepts describes devices utilized in power transmission and distribution equipment, and for very high power motor control in electric trains and steel-mills. Since these devices must be capable of supporting more than 5000-volts in the blocking mode, this books covers operation of devices rated at 5,000-V, 10,000-V and 20,000-V. Advanced concepts (the MCT, the BRT, and the EST) that enable MOS-gated control of power thyristor structures are described and analyzed in detail. In addition, detailed analyses of the silicon IGBT, as well as the silicon carbide MOSFET and IGBT, are provided for comparison purposes. Throughout the book, analytical models are generated to give a better understanding of the physics of operation for all the structures. This book provides readers with: The first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets;  Analytical formulations for all the device ...

  11. High-Voltage, Asymmetric-Waveform Generator

    Science.gov (United States)

    Beegle, Luther W.; Duong, Tuan A.; Duong, Vu A.; Kanik, Isik

    2008-01-01

    The shapes of waveforms generated by commercially available analytical separation devices, such as some types of mass spectrometers and differential mobility spectrometers are, in general, inadequate and result in resolution degradation in output spectra. A waveform generator was designed that would be able to circumvent these shortcomings. It is capable of generating an asymmetric waveform, having a peak amplitude as large as 2 kV and frequency of several megahertz, which can be applied to a capacitive load. In the original intended application, the capacitive load would consist of the drift plates in a differential-mobility spectrometer. The main advantage to be gained by developing the proposed generator is that the shape of the waveform is made nearly optimum for various analytical devices requiring asymmetric-waveform such as differential-mobility spectrometers. In addition, this waveform generator could easily be adjusted to modify the waveform in accordance with changed operational requirements for differential-mobility spectrometers. The capacitive nature of the load is an important consideration in the design of the proposed waveform generator. For example, the design provision for shaping the output waveform is based partly on the principle that (1) the potential (V) on a capacitor is given by V=q/C, where C is the capacitance and q is the charge stored in the capacitor; and, hence (2) the rate of increase or decrease of the potential is similarly proportional to the charging or discharging current. The proposed waveform generator would comprise four functional blocks: a sine-wave generator, a buffer, a voltage shifter, and a high-voltage switch (see Figure 1). The sine-wave generator would include a pair of operational amplifiers in a feedback configuration, the parameters of which would be chosen to obtain a sinusoidal timing signal of the desired frequency. The buffer would introduce a slight delay (approximately equal to 20 ns) but would otherwise

  12. Charge transport dependent high open circuit voltage tandem organic photovoltaic cells with low temperature deposited HATCN-based charge recombination layers.

    Science.gov (United States)

    Wei, Huai-Xin; Zu, Feng-Shuo; Li, Yan-Qing; Chen, Wen-Cheng; Yuan, Yi; Tang, Jian-Xin; Fung, Man-Keung; Lee, Chun-Sing; Noh, Yong-Young

    2016-02-01

    Mechanisms of charge transport between the interconnector and its neighboring layers in tandem organic photovoltaic cells have been systematically investigated by studying electronic properties of the involving interfaces with photoelectron spectroscopies and performance of the corresponding devices. The results show that charge recombination occurs at HATCN and its neighboring hole transport layers which can be deposited at low temperature. The hole transport layer plays an equal role to the interconnector itself. These insights provide guidance for the identification of new materials and the device architecture for high performance devices.

  13. High perfomance selectable value transportable high dc Voltage standard

    CERN Document Server

    Galliana, Flavio; Tet, Luca Roncaglione

    2016-01-01

    At National Institute of Metrological Research (INRIM), a selectable-value Transportable High dcVoltage Standard (THVS) operating in the range from 10 V to 100 V in steps of 10 V, was developed. This Standard was built to cover the lack of high level dc Voltage Standards at voltages higher than 10 V to employ as laboratory (local) or travelling Standards for Inter-Laboratory Comparisons (ILCs). A ground-mobile electronic technique was used to enhance the accuracy of the THVS at the higher values. The THVS shows better noise, better short-mid-term stability than top level dc Voltage and multifunction calibrators (MFCs) and better suitability and insensibility to be transported than these instruments. The project is extensible to 1000 V.

  14. Optimal planning of high voltage distribution substations

    Institute of Scientific and Technical Information of China (English)

    YU Yixin; YAN Xuefei; ZHANG Yongwu

    2007-01-01

    Aimed at solving the problem of optimal planning for high voltage distribution substations,an efficient method is put forward.The method divides the problem into two sub-problems:source locating and combinational optimization.The algorithm of allocating and locating alternatively (ALA) is widely used to deal with the source locating problem,but it is dependent on the initial location to a large degree.Thus,some modifications were made to the ALA algorithm,which could greatly improve the quality of solutions.In addition,considering the non-convex and nonconcave nature of the sub-problem of combinational optimization,the branch-and-bound technique was adopted to obtain or approximate a global optimal solution.To improve the efficiency of the branch-and-bound technique,some heuristic principles were proposed to cut those branches that may generate a global optimization solution with low probability.Examples show that the proposed algorithm meets the requirement of engineering and it is an effective approach to rapidly solve the problem of optimal planning for high voltage distribution substations.

  15. Electronic Current Transducer (ECT) for high voltage dc lines

    Science.gov (United States)

    Houston, J. M.; Peters, P. H., Jr.; Summerayes, H. R., Jr.; Carlson, G. J.; Itani, A. M.

    1980-02-01

    The development of a bipolar electronic current transducer (ECT) for measuring the current in a high voltage dc (HVDC) power line at line potential is discussed. The design and construction of a free standing ECT for use on a 400 kV line having a nominal line current of 2000 A is described. Line current is measured by a 0.0001 ohm shunt whose voltage output is sampled by a 14 bit digital data link. The high voltage interface between line and ground is traversed by optical fibers which carry digital light signals as far as 300 m to a control room where the digital signal is converted back to an analog representation of the shunt voltage. Two redundant electronic and optical data links are used in the prototype. Power to operate digital and optical electronics and temperature controlling heaters at the line is supplied by a resistively and capacitively graded 10 stage cascade of ferrite core transformers located inside the hollow, SF6 filled, porcelain support insulator. The cascade is driven by a silicon controlled rectifier inverter which supplies about 100 W of power at 30 kHz.

  16. Program-Controlled High Voltage Module in Active Voltage Dividers(AVD) for MPGD

    CERN Document Server

    Ginting, Muhammad Fadhil

    2016-01-01

    Micro Pattern Gas Detectors (MPGD) applications are rapidly developing and became an important part of upgrades for the LHC detectors. RD51/CERN have worked on Active Voltage Divider (AVD) technology for multistage MPGDs, One of the next developments for the AVD is to design and integrate high voltage module in a single box. The Program-Controlled High Voltage Module, part of one AIDA2020 project, has been successfully designed and developed, and can be integrated in AVD design.

  17. High Voltage GaN Schottky Rectifiers

    Energy Technology Data Exchange (ETDEWEB)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  18. High-frequency graphene voltage amplifier.

    Science.gov (United States)

    Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

    2011-09-14

    While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.

  19. Transformerless DC-DC Converter Using Cockcroft-Walton Voltage Multiplier to Obtain High DC Voltage

    Directory of Open Access Journals (Sweden)

    Meghana G Naik,

    2014-11-01

    Full Text Available In the present scenario the use of transformer for high voltages in converter circuit reduces the overall operating efficiency due to leakage inductance and use of transformer also increases the operational cost. . Therefore the proposed system is implemented with transformer less DC-DC converter so as to obtain high DC voltage with the use of nine stage Cockcroft-Walton (CW voltage multiplier. The proposed converter operates in CCM (continuous conduction mode, so that the converter switch stress, the switching losses are reduced. The DC voltage at the input of the proposed model is low and is boosted up by boost inductor (Ls in DC-DC converter stage and performs inverter operation. The number of stages in CW-voltage multiplier circuit is applied with low input pulsating DC (AC Voltage voltage where it is getting converted to high DC output voltage. The proposed converter switches operates at two independent frequencies, modulating (fsm andalternating (fsc frequency. The fsm operates at higher frequency of the output while the fsc operates at lower frequency of the desired output voltage ripple and the output ripples can be adjusted by the switch Sc1 and Sc2. The regulation of the output voltage is achieved by controlling the Duty ratio.The simulation is carried over by the MATLABSIMULINK.

  20. A High-Voltage Level Tolerant Transistor Circuit

    NARCIS (Netherlands)

    Annema, Anne Johan; Geelen, Godefridus Johannes Gertrudis Maria

    2001-01-01

    A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1) con

  1. HIGH VOLTAGE SAFETY MANAGEMENT SYSTEM OF ELECTRIC VEHICLE

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In order to improve the drivability and energy efficiency of electric vehicle (EV), more and more batteries are connected in series with high voltage which makes it necessary to monitor the electric parameters of high voltage system (HVS) to ensure the high voltage safety. A high voltage safety management system is developed to solve this critical issue. Several key electric parameters including pre-charge, contact resistance, insulation resistance and remaining capacity are monitored and analyzed based on the presented equivalent models. An electronic unit called high voltage safety controller is developed. By the help of hardware-in-loop system, the equivalent models integrated in the high voltage safety controller are validated and the on-line electric parameters monitor strategy is discussed. The real vehicle experiment results indicate that the high voltage safety management system designed is suitable for EV application.

  2. Plasma response to transient high voltage pulses

    Indian Academy of Sciences (India)

    S Kar; S Mukherjee

    2013-07-01

    This review reports on plasma response to transient high voltage pulses in a low pressure unmagnetized plasma. Mainly, the experiments are reviewed, when a disc electrode (metallic and dielectric) is biased pulsed negative or positive. The main aim is to review the electron loss in plasmas and particle balance during the negative pulse electrode biasing, when the applied pulse width is less than the ion plasma period. Though the applied pulse width is less than the ion plasma period, ion rarefaction waves are excited. The solitary electron holes are reviewed for positive pulsed bias to the electrode. Also the excitation of waves (solitary electron and ion holes) is reviewed for a metallic electrode covered by a dielectric material. The wave excitation during and after the pulse withdrawal, excitation and propagation characteristics of various electrostatic plasma waves are reviewed here.

  3. RICH High Voltages & PDF Analysis @ LHCb

    CERN Multimedia

    Fanchini, E

    2009-01-01

    In the LHCb experiment an important issue is the identification of the hadrons of the final states of the B mesons decays. Two RICH subdetectors are devoted to this task, and the Hybrid Photon Detectors (HPDs) are the photodetectors used to detect Cherenkov light. In this poster there is a description of how the very high voltage (-18 KV) supply stability used to power the HPDs is monitored. It is also presented the basics of a study which can be done with the first collision data: the analysis of the dimuons from the Drell-Yan process. This process is well known and the acceptance of the LHCb detector in terms of pseudorapidity will be very useful to improve the knowledge of the proton structure functions or, alternatively, try to estimate the luminosity from it.

  4. High Efficiency Power Converter for Low Voltage High Power Applications

    DEFF Research Database (Denmark)

    Nymand, Morten

    , and remote power generation for light towers, camper vans, boats, beacons, and buoys etc. In chapter 2, a review of current state-of-the-art is presented. The best performing converters achieve moderately high peak efficiencies at high input voltage and medium power level. However, system dimensioning...

  5. Bottlenecks reduction using superconductors in high voltage transmission lines

    Directory of Open Access Journals (Sweden)

    Daloub Labib

    2016-01-01

    Full Text Available Energy flow bottlenecks in high voltage transmission lines known as congestions are one of the challenges facing power utilities in fast developing countries. Bottlenecks occur in selected power lines when transmission systems are operated at or beyond their transfer limits. In these cases, congestions result in preventing new power supply contracts, infeasibility in existing contracts, price spike and market power abuse. The “Superconductor Technology” in electric power transmission cables has been used as a solution to solve the problem of bottlenecks in energy transmission at high voltage underground cables and overhead lines. The increase in demand on power generation and transmission happening due to fast development and linked to the intensive usage of transmission network in certain points, which in turn, lead to often frequent congestion in getting the required power across to where it is needed. In this paper, a bottleneck in high voltage double overhead transmission line with Aluminum Conductor Steel Reinforced was modeled using conductor parameters and replaced by Gap-Type Superconductor to assess the benefit of upgrading to higher temperature superconductor and obtain higher current carrying capacity. This proved to reduce the high loading of traditional aluminum conductors and allow more power transfer over the line using superconductor within the same existing right-of-way, steel towers, insulators and fittings, thus reducing the upgrade cost of building new lines.

  6. RF transconductor linearization technique robust to process, voltage and temperature variations

    NARCIS (Netherlands)

    Kundur Subramaniyan, Harish; Klumperink, Eric A.M.; Nauta, Bram; Venkatesh, Srinivasan; Kiaei, Ali

    2014-01-01

    A new reconfigurable linearized low noise transconductance amplifier (LNTA) design for a software-defined radio receiver is presented. The transconductor design aims at realizing high linearity at RF in a way that is robust for Process, Voltage and Temperature variations. It exploits resistive degen

  7. Next generation KATRIN high precision voltage divider for voltages up to 65kV

    CERN Document Server

    Bauer, S; Hochschulz, F; Ortjohann, H -W; Rosendahl, S; Thümmler, T; Schmidt, M; Weinheimer, C

    2013-01-01

    The KATRIN (KArlsruhe TRItium Neutrino) experiment aims to determine the mass of the electron antineutrino with a sensitivity of 200meV by precisely measuring the electron spectrum of the tritium beta decay. This will be done by the use of a retarding spectrometer of the MAC-E-Filter type. To achieve the desired sensitivity the stability of the retarding potential of -18.6kV has to be monitored with a precision of 3ppm over at least two months. Since this is not feasible with commercial devices, two ppm-class high voltage dividers were developed, following the concept of the standard divider for DC voltages of up to 100kV of the Physikalisch-Technische Bundesanstalt (PTB). In order to reach such high accuracies different effects have to be considered. The two most important ones are the temperature dependence of resistance and leakage currents, caused by insulators or corona discharges. For the second divider improvements were made concerning the high-precision resistors and the thermal design of the divider....

  8. Energy Storage Options for Voltage Support in Low-Voltage Grids with High Penetration of Photovoltaic

    DEFF Research Database (Denmark)

    Marra, Francesco; Tarek Fawzy, Y.; Bülo, Thorsten

    2012-01-01

    The generation of power by photovoltaic (PV) systems is constantly increasing in low-voltage (LV) distribution grids, in line with the European environmental targets. To cope with the effects on grid voltage profiles during high generation and low demand periods, new solutions need to be establis...

  9. Evolution of recrystallization textures in high voltage aluminum capacitor foils

    Institute of Scientific and Technical Information of China (English)

    刘楚明; 张新明; 周鸿章; 陈志永; 邓运来; 周卓平

    2001-01-01

    The evolution of recrystallization textures in high voltage aluminum capacitor foils which are produced with a high level of cold reduction was tracked by analysis of microstructure and crystallographic texture. The results show that the deformation textures are mainly composed of S-orientation, Cu-orientation and a little Bs-orientation. During the low temperature stages of final annealing, the iron precipitates first along the sub-grain boundaries, and the Fe concentration in the matrix becomes low. Then, the cube grains nucleate preferably into the sub-grains. At high temperature stages, the cube nuclei can grow preferably because of their 40°〈111〉 orientation relationship to the S orientation, the main component of the rolling texture. Finally, the cube texture is sharply strong and the R orientation is very weak in the foils.

  10. Advances in high voltage power switching with GTOs

    Energy Technology Data Exchange (ETDEWEB)

    Podlesak, T.F. (US Army Electronic Technology and Devices Lab., Fort Monmouth, NJ (US)); McMurray, J.A. (Vitronics, Eatontown, NJ (US)); Carter, J.L.

    1990-12-01

    The control of high voltage at high power, particularly opening switches, has been difficult in the past. Using gate turnoff thyristors (GTOs) arranged in series enables large currents to be switched at high voltage. A high voltage opening switch has been successfully demonstrated in our laboratory. This switch uses GTOs in series and successfully operates at voltages higher than the rated voltage of the individual devices. It is believed that this is the first time this has been successfully demonstrated, in that GTOs have been operated in series before, but always in a manner as to not exceed the voltage capability of the individual devices. In short, the devices have not worked together, sharing the voltage, but one device has been operated using several backup devices. Of particular interest is how well the individual devices share the voltage applied to them. Equal voltage sharing between devices is absolutely essential, in order to not exceed the voltage rating of any of the devices in the series chain. This is accomplished at high (microsecond) switching speeds. Thus, the system is useful for high frequency applications as well as high power, making for a flexible circuit system element. This paper reports on this demonstration system that is rated at 5 KV and uses 1 KV devices. A larger 24 KV system is under design and will use 4.5 KV devices. In order to design the 24 KV switch, the safe operating area of the large devices must be known thoroughly.

  11. LED-Based High-Voltage Lines Warning System

    Directory of Open Access Journals (Sweden)

    Eldar MUSA

    2013-04-01

    Full Text Available LED-based system, running with the current of high-voltage lines and converting the current flowing through the line into the light by using a toroid transformer, has been developed. The transformer’s primary winding is constituted by the high voltage power line. Toroidal core consists of two equal parts and the secondary windings are evenly placed on these two parts. The system is mounted on the high-voltage lines as a clamp. The secondary winding ends are connected in series by the connector on the clamp. LEDs are supplied by the voltage at the ends of secondary. Current flowing through highvoltage transmission lines is converted to voltage by the toroidal transformer and the light emitting LEDs are supplied with this voltage. The theory of the conversion of the current flowing through the line into the light is given. The system, running with the current of the line and converting the current into the light, has been developed. System has many application areas such as warning high voltage lines (warning winches to not hinder the high-voltage lines when working under the lines, warning planes to not touch the high-voltage lines, remote measurement of high-voltage line currents, and local illumination of the line area

  12. High Voltage Applications of Explosively Formed Fuses

    Science.gov (United States)

    Tasker, D. G.; Goforth, J. H.; Fowler, C. M.; Herrera, D. H.; King, J. C.; Lopez, E. A.; Martinez, E. C.; Oona, H.; Marsh, S. P.; Reinovsky, R. E.; Stokes, J.; Tabaka, L. J.; Torres, D. T.; Sena, F. C.; Kiuttu, G.; Degnan, J.

    2004-11-01

    At Los Alamos, we have primarily applied Explosively Formed Fuse (EFF) techniques to high current systems. In these systems, the EFF has interrupted currents from 19-25 MA, thus diverting the current to low inductance loads. The transferred current magnitude is determined by the ratio of storage inductance to load inductance and, with dynamic loads, the current has ranged from 12-20 MA. In a system with 18 MJ stored energy, the switch operates at a power of up to 6 TW. We are now investigating the use of the EFF technique to apply high voltages to high impedance loads in systems that are more compact. In these systems we are exploring circuits with EFF lengths from 43-100 cm, which have storage inductances large enough to apply 300-500 kV across high impedance loads. Experimental results and design considerations are presented. Using cylindrical EFF switches of 10 cm diameter and 43 cm length, currents of approximately 3 MA were interrupted producing ~200 kV. This indicates the switch had an effective resistance of ~100 mΩ where 150-200 mΩ was expected. To understand the lower performance, several parameters were studied including electrical conduction through the explosive products; current density; explosive initiation; insulator type and conductor thickness. The results show a number of interesting features, most notably that the primary mechanism of switch operation is mechanical and not electrical fusing of the conductor. Switches opening on a 1-10 μs time scale with resistances starting at 50 μΩ and increasing to perhaps 1 Ω now seem possible to construct using explosive charges as small as a few pounds.

  13. Hybrid-PIC Modeling of a High-Voltage, High-Specific-Impulse Hall Thruster

    Science.gov (United States)

    Smith, Brandon D.; Boyd, Iain D.; Kamhawi, Hani; Huang, Wensheng

    2013-01-01

    The primary life-limiting mechanism of Hall thrusters is the sputter erosion of the discharge channel walls by high-energy propellant ions. Because of the difficulty involved in characterizing this erosion experimentally, many past efforts have focused on numerical modeling to predict erosion rates and thruster lifespan, but those analyses were limited to Hall thrusters operating in the 200-400V discharge voltage range. Thrusters operating at higher discharge voltages (V(sub d) >= 500 V) present an erosion environment that may differ greatly from that of the lower-voltage thrusters modeled in the past. In this work, HPHall, a well-established hybrid-PIC code, is used to simulate NASA's High-Voltage Hall Accelerator (HiVHAc) at discharge voltages of 300, 400, and 500V as a first step towards modeling the discharge channel erosion. It is found that the model accurately predicts the thruster performance at all operating conditions to within 6%. The model predicts a normalized plasma potential profile that is consistent between all three operating points, with the acceleration zone appearing in the same approximate location. The expected trend of increasing electron temperature with increasing discharge voltage is observed. An analysis of the discharge current oscillations shows that the model predicts oscillations that are much greater in amplitude than those measured experimentally at all operating points, suggesting that the differences in oscillation amplitude are not strongly associated with discharge voltage.

  14. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11,000 cm(2)/V·s.

    Science.gov (United States)

    Smith, Casey; Qaisi, Ramy; Liu, Zhihong; Yu, Qingkai; Hussain, Muhammad Mustafa

    2013-07-23

    Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11,000 cm(2)/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low tox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance.

  15. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11 000 cm2/V·s

    KAUST Repository

    Smith, Casey

    2013-07-23

    Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11 000 cm 2/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low t ox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance. © 2013 American Chemical Society.

  16. Computer Controlled High Precise,High Voltage Pules Generator

    Institute of Scientific and Technical Information of China (English)

    但果; 邹积岩; 丛吉远; 董恩源

    2003-01-01

    High precise, high voltage pulse generator made up of high-power IGBT and pulse transformers controlled by a computer are described. A simple main circuit topology employed in this pulse generator can reduce the cost meanwhile it still meets special requirements for pulsed electric fields (PEFs) in food process. The pulse generator utilizes a complex programmable logic device (CPLD) to generate trigger signals. Pulse-frequency, pulse-width and pulse-number are controlled via RS232 bus by a computer. The high voltage pulse generator well suits to the application for fluid food non-thermal effect in pulsed electric fields, for it can increase and decrease by the step length 1.

  17. High Temperature Materials Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The High Temperature Materials Lab provides the Navy and industry with affordable high temperature materials for advanced propulsion systems. Asset List: Arc Melter...

  18. 一种高精度模数混合温度补偿晶体振荡器%A High-Precision Mixed-Signal Voltage-Controlled Crystal Oscillator with Temperature Compensation

    Institute of Scientific and Technical Information of China (English)

    刘会娟; 伍冬; 郑德平; 潘立阳; 许军

    2011-01-01

    A mixed-signal voltage-controlled crystal oscillator with temperature compensation was implemented in 0.18 ;*m standard CMOS process. The on-chip compensated network reduced memory capacity in digital network. The circuit needs neither floating-gate nor high-voltage CMOS transistor as required by conventional EEPROM/flash memory, which reduced chip cost and power consumption. Simulation results showed that the proposed circuit had a temperature frequency stability of 10'7 from -40 V to 85 *C, and the system consumed 1. 79 mA of power from 1. 8 V supply.%提出了一种对石英晶体振荡器进行温度补偿的模数混合方法.该补偿芯片基于0.18μm标准CMOS工艺实现.采用模拟补偿网络和基于非挥发存储器的数字补偿网络相叠加的方法,对晶体振荡器进行间接补偿,实现了数模混合的片式化,降低了存储器的容量.该方法不需要高压CMOS和EEPROM浮栅器件,降低了工艺成本和功耗.补偿结果显示,温度频率稳定度达到10-7/-40℃~85℃,系统功耗为1.79 mA@1.8 V.

  19. Propylene based systems for high voltage cable insulation applications

    Energy Technology Data Exchange (ETDEWEB)

    Hosier, I L; Vaughan, A S; Swingler, S G [ECS, University of Southampton, Highfield, Southampton, SO17 1BJ (United Kingdom); Cozzarini, L, E-mail: ILH@ecs.soton.ac.u [DMRN, University of Trieste, Via Valerio 6A, 34127 Trieste (Italy)

    2009-08-01

    Crosslinked polyethylene (XLPE) remains the material of choice for extruded high voltage cables, possessing excellent thermo-mechanical and electrical properties. However, it is not easily recyclable posing questions as to its long term sustainability. Whilst both polyethylene and polypropylene are widely recycled and provide excellent dielectric properties, polypropylene has significantly better mechanical integrity at high temperatures than polyethylene. However, while isotactic polypropylene is too stiff at room temperature for incorporation into a cable system, previous studies by the authors have indicated that this limitation can be overcome by using a propylene-ethylene copolymer. Whilst these previous studies considered unrelated systems, the current study aims to quantify the usefulness of a series of related random propylene-ethylene co-polymers and assesses their potential for replacing XLPE.

  20. High-PSRR High-Order Curvature-Compensated CMOS Bandgap Voltage Reference

    Institute of Scientific and Technical Information of China (English)

    Qianneng Zhou; Yunsong Li; Jinzhao Lin; Hongjuan Li; Yu Pang; Wei Luo

    2015-01-01

    A high⁃PSRR high⁃order curvature⁃compensated CMOS bandgap voltage reference (BGR), which has the performances of high power supply rejection ratio ( PSRR) and low temperature coefficient, is designed in SMIC 0�18 μm CMOS process. Compared to the conventional curvature⁃compensated BGR which adopted a piecewise⁃linear current, the temperature characterize of the proposed BGR is effectively improved by adopting two kinds of current including a piecewise⁃linear current and a current proportional 1�5 party to the absolute temperature T. By adopting a low dropout ( LDO) regulator whose output voltage is the operating supply voltage of the proposed BGR core circuit instead of power supply voltage VDD , the proposed BGR with LDO regulator achieves a well PSRR performance than the BGR without LDO regulator. Simulation results show that the proposed BGR with LDO regulator achieves a temperature coefficient of 2�1 × 10-6/℃ with a 1�8 V power supply voltage and a line regulation of 4�9 μV/V at 27 ℃. The proposed BGR with LDO regulator at 10 Hz, 100 Hz, 1 kHz, 10 kHz and 100 kHz have the PSRR of -106�388, -106�388, -106�38, -105�93 and-88�67 dB respectively.

  1. An Optoelectronic High-voltage Probe for Measuring Impulse Voltage Distribution of HVDC Converter Valve

    Institute of Scientific and Technical Information of China (English)

    方志; 邱毓昌

    2007-01-01

    A high-voltage optoelectronic probe is developed for measuring impulse voltage distribution along thyristor units in the HVDC converter valve. The dimension of the resistive voltage divider is optimized by means of numerical compttation of electric field. A pulse frequency modulation (PFM) mode is adopted for the data transmission link because of its immunity to high-intensity electromagnetic interference. Experimental results indicate that the linearity deviation for the whole measuring system is within ± 0.15 %, and therefore it can meet requirements specified by IEC60700-1.

  2. Process, Voltage and Temperature Compensation Technique for Cascode Modulated PAs

    DEFF Research Database (Denmark)

    Sira, Daniel; Larsen, Torben

    2013-01-01

    transconductance amplifier. The predistorted varying envelope signal is applied to the cascode gate of the PA. It is shown that the proposed PVT compensation technique significantly reduces the PVT spread of the PA linearity indicators and improves the PA linearity. Simulations were performed in a 0.13 μm CMOS......This paper presents a process, voltage and temperature (PVT) compensation method for a cascode modulated polar power amplifier (PA). It is shown that it is possible to create a baseband replica circuit of the PA that has the same AM-AM nonlinearity as the PA itself. The replica circuit......, that represents a transistor level model (empirical model) of the cascode modulated PA, is utilized in a PA analog predistorter. The analog predistorter linearizes and compensates for PVT variation of the cascode modulated PA. The empirical model is placed in the negative feedback of an operational...

  3. Challenges for High Voltage Testing of UHV Equipment

    Institute of Scientific and Technical Information of China (English)

    Ernst Gockenbach

    2011-01-01

    The increase of voltage level for AC and DC transmission systems requires some changes in the high voltage testing for Ultra High Voltage (UHV) equipment. After a short description of the coordination work in the standard- ization bodies the requirements for UHV equipment are mentioned. The main points concerning high voltage testing of UHV equipment are the impulse shape of standard lightning impulse voltage, the evaluation of the test voltage for impulses with oscillations or overshoot near the peak and the time parameter of switching impulses. The linearity check of the measuring devices, the proximity effect, the wet tests and the atmospheric correction factors are further points to be discussed concerning testing of UHV equipment.

  4. High voltage switches having one or more floating conductor layers

    Energy Technology Data Exchange (ETDEWEB)

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  5. Study of High Voltage AC Underground Cable Systems

    DEFF Research Database (Denmark)

    da Silva, Filipe Miguel Faria; Bak, Claus Leth; Wiechowski, Wojciech T.

    2010-01-01

    High-Voltage cables are starting to be more often used to transmit electric energy at high-voltage levels, introducing in the electric grid phenomena that are uncommon when using Overhead Lines. Under the phenomena worthy of special attention are those related with the cable energisation and deen...

  6. 高电源抑制比低温漂带隙基准源设计%Design of Low Temperature-Drift Bandgap Voltage Reference with High PSRR

    Institute of Scientific and Technical Information of China (English)

    胡佳俊; 陈后鹏; 蔡道林; 宋志棠; 周桂华

    2012-01-01

    根据带隙基准的基本原理,结合含三条支路负反馈的电流源,设计了一种高阶补偿的带隙基准源电路.实现了对温度的2阶补偿和3阶补偿,获得了一种高电源抑制比、低温漂、不受电源变化影响的电压基准源.设计采用0.35μm CMOS工艺,仿真结果表明,在-40℃~125℃温度范围内,输出电压的温度系数为7.70×10-7/℃,在1 kHz时,电源抑制比为-82.3 dB.%Based on the principle of bandgap reference and current reference source with 3-branch negative feedback, a bandgap voltage reference source with 2nd-order and 3rd -order temperature compensation was designed. The circuit had a high PSKR and low temperature-drift The design was based on 0. 35 μm CMOS process. Simulation results showed that the bandgap reference source had a temperature coefficient below 7. 70 X 10-7/℃ when the temperature varied from -40 ℃ to 125 ℃, and a PSRR of -82. 3 dB at 1 kHz.

  7. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  8. Voltage Balancing Method on Expert System for 51-Level MMC in High Voltage Direct Current Transmission

    Directory of Open Access Journals (Sweden)

    Yong Chen

    2016-01-01

    Full Text Available The Modular Multilevel Converters (MMC have been a spotlight for the high voltage and high power transmission systems. In the VSC-HVDC (High Voltage Direct Current based on Voltage Source Converter transmission system, the energy of DC link is stored in the distributed capacitors, and the difference of capacitors in parameters and charge rates causes capacitor voltage balance which affects the safety and stability of HVDC system. A method of MMC based on the expert system for reducing the frequency of the submodules (SMs of the IGBT switching frequency is proposed. Firstly, MMC with 51 levels for HVDC is designed. Secondly, the nearest level control (NLC for 51-level MMC is introduced. Thirdly, a modified capacitor voltage balancing method based on expert system for MMC-based HVDC transmission system is proposed. Finally, a simulation platform for 51-level Modular Multilevel Converter is constructed by using MATLAB/SIMULINK. The results indicate that the strategy proposed reduces the switching frequency on the premise of keeping submodule voltage basically identical, which greatly reduces the power losses for MMC-HVDC system.

  9. Electrical system architecture having high voltage bus

    Science.gov (United States)

    Hoff, Brian Douglas [East Peoria, IL; Akasam, Sivaprasad [Peoria, IL

    2011-03-22

    An electrical system architecture is disclosed. The architecture has a power source configured to generate a first power, and a first bus configured to receive the first power from the power source. The architecture also has a converter configured to receive the first power from the first bus and convert the first power to a second power, wherein a voltage of the second power is greater than a voltage of the first power, and a second bus configured to receive the second power from the converter. The architecture further has a power storage device configured to receive the second power from the second bus and deliver the second power to the second bus, a propulsion motor configured to receive the second power from the second bus, and an accessory motor configured to receive the second power from the second bus.

  10. Improvement of high-voltage staircase drive circuit waveform for high-intensity therapeutic ultrasound

    Science.gov (United States)

    Tamano, Satoshi; Jimbo, Hayato; Azuma, Takashi; Yoshizawa, Shin; Fujiwara, Keisuke; Itani, Kazunori; Umemura, Shin-Ichiro

    2016-07-01

    Recently, in the treatment of diseases such as cancer, noninvasive or low-invasive modality, such as high-intensity focused ultrasound (HIFU), has been put into practice as an alternative to open surgery. HIFU induces thermal ablation of the target tissue to be treated. To improve the efficiency of HIFU, we have proposed a “triggered-HIFU” technique, which uses the combination of a short-duration, high-voltage transmission and a long-duration, medium-voltage transmission. In this method, the transmission device must endure high peak voltage for the former and the high time-average power for the latter. The triggered-HIFU sequence requires electronic scanning of the HIFU focus to maximize its thermal efficiency. Therefore, the transmission device must drive an array transducer with the number of elements on the order of a hundred or more, which requires that each part of the device that drives each element must be compact. The purpose of this work is to propose and construct such a transmission device by improving the staircase drive circuit, which we previously proposed. The main point of improvement is that both N and P MOSFETs are provided for each staircase voltage level instead of only one of them. Compared with the previous ultrasonic transmission circuit, high-voltage spikes were significantly reduced, the power consumption was decreased by 26.7%, and the transmission circuit temperature rise was decreased by 14.5 °C in the triggered-HIFU heating mode.

  11. High Voltage Breakdown Levels in Various EPC Potting Materials

    Science.gov (United States)

    Komm, David S.

    2006-01-01

    This viewgraph presentation reviews exploration activities at JPL into various potting materials. Since high power space-borne microwave transmitters invariably use a vacuum tube as a final power amplifier, and this tube requires high electrode voltages for operation. The associated high voltage insulation typically represents a significant fraction of the mass of the transmitter. Since mass is always a premium resource on board spacecraft, we have been investigating materials with the potential to reduce the mass required for our applications here at JPL. This paper describes electrical breakdown results obtained with various potting materials. Conathane EN-11 (polyurethane) is the traditional HVPS encapsulant at JPL, but due to temperature limitations and durability issues it was deemed inappropriate for the particular application (i.e., CloudSat radar). The choices for the best available materials were epoxies, or silicones. Epoxies are too rigid, and were deemed inadvisable. Two silicones were further investigated (i.e.,ASTM E595- 93e2: GE RTV566(R) and Dow Corning 93-500X(R), another compound was considered (i.e., DC material, Sylgard 184(R)). "Loading" (adding filler materials) the potting compound will frequently alter the final material properties. Powdered alumina and borosilicate glass known as "microballoons" were investigated as possible loading materials. The testing of the materials is described. Each of the two loading materials offers advantages and disadvantages. The advantages and disadvantages are described.

  12. Living and Working Safely Around High-Voltage Power Lines.

    Energy Technology Data Exchange (ETDEWEB)

    United States. Bonneville Power Administration.

    2001-06-01

    High-voltage transmission lines can be just as safe as the electrical wiring in the homes--or just as dangerous. The crucial factor is ourselves: they must learn to behave safely around them. This booklet is a basic safety guide for those who live and work around power lines. It deals primarily with nuisance shocks due to induced voltages, and with potential electric shock hazards from contact with high-voltage lines. References on possible long-term biological effects of transmission lines are shown. In preparing this booklet, the Bonneville Power Administration has drawn on more than 50 years of experience with high-voltage transmission. BPA operates one of the world`s largest networks of long-distance, high-voltage lines. This system has more than 400 substations and about 15,000 miles of transmission lines, almost 4,400 miles of which are operated at 500,000 volts.

  13. COTS Li-Ion Cells in High Voltage Batteries

    Science.gov (United States)

    Davies, Francis; Darcy, Eric; Jeevarajan, Judy; Cowles, Phil

    2003-01-01

    Testing at NASA JSC and COMDEV shows that Commercial Off the Shelf (COTS) Li Ion cells can not be used in high voltage batteries safely without considering the voltage stresses that may be put on the protective devices in them during failure modes.

  14. Pollution Maintenance Techniques in Coastal High Voltage Installations

    Directory of Open Access Journals (Sweden)

    E. Pyrgioti

    2011-02-01

    Full Text Available Pollution of outdoor high voltage insulators is a common problem for utilities, with a considerable impact to power system reliability. In an effort to prevent possible flashovers due to pollution, many methods have been applied, aiming to improve the insulation performance, either by suppressing the formation of surface conductivity or by increasing the possible insulation level. In the case of substations, the selection of the appropriate technique is complex due to certain issues correlated to the nature of the installation. In this paper, several techniques usually implemented by utilities, are investigated based on the experienced gained in the case of Crete, a Greek island in southern Europe, where due to the coastal development of the power system, the majority of high voltage installations are exposed to intense marine pollution. The technique of coating insulators with Room Temperature Vulcanized Silicone Rubber (RTV SIR has proved rather efficient and therefore is presented extendedly. Correlation of the material behaviour with environmental conditions is discussed and results from long term monitoring, including environmental parameters and leakage current measurements, in a 150 kV Substation are presented. It is shown that RTV SIR coatings have remarkably suppressed surface activity and that porcelain insulators exhibit different activity period when coated.

  15. Switchgear installations for extremely high voltages

    Energy Technology Data Exchange (ETDEWEB)

    Muller, M.; Stepinski, B.

    1964-01-01

    The methods by which 750-kV installations can be economically constructed are described. Besides the choice of phase distances and conductors, the possible layouts and circuitry are dealt with and illustrated by results obtained from the basic studies of 750-kV equipment. In conclusion, a comparison of costs is made, both for the individual components and for the overall financial outlay for the arrangements considered; the total and itemized costs of compounds for voltages of 245 to 750 kV according to the present state of the art are also discussed.

  16. High-voltage air-core pulse transformers

    Energy Technology Data Exchange (ETDEWEB)

    Rohwein, G. J.

    1981-01-01

    General types of air core pulse transformers designed for high voltage pulse generation and energy transfer applications are discussed with special emphasis on pulse charging systems which operate up to the multi-megavolt range. The design, operation, dielectric materials, and performance are described. It is concluded that high voltage air core pulse transformers are best suited to applications outside the normal ranges of conventional magnetic core transformers. In general these include charge transfer at high power levels and fast pulse generation with comparatively low energy. When properly designed and constructed, they are capable of delivering high energy transfer efficiency and have demonstrated superior high voltage endurance. The principal disadvantage of high voltage air core transformers is that they are not generally available from commercial sources. Consequently, the potential user must become thoroughly familiar with all aspects of design, fabrication and system application before he can produce a high performance transformer system. (LCL)

  17. The thermal regime around buried submarine high-voltage cables

    Science.gov (United States)

    Emeana, C. J.; Hughes, T. J.; Dix, J. K.; Gernon, T. M.; Henstock, T. J.; Thompson, C. E. L.; Pilgrim, J. A.

    2016-08-01

    The expansion of offshore renewable energy infrastructure and the need for trans-continental shelf power transmission require the use of submarine high-voltage (HV) cables. These cables have maximum operating surface temperatures of up to 70 °C and are typically buried 1-2 m beneath the seabed, within the wide range of substrates found on the continental shelf. However, the heat flow pattern and potential effects on the sedimentary environments around such anomalously high heat sources in the near-surface sediments are poorly understood. We present temperature measurements from a 2-D laboratory experiment representing a buried submarine HV cable, and identify the thermal regimes generated within typical unconsolidated shelf sediments—coarse silt, fine sand and very coarse sand. We used a large (2 × 2.5 m2) tank filled with water-saturated spherical glass beads (ballotini) and instrumented with a buried heat source and 120 thermocouples to measure the time-dependent 2-D temperature distributions. The observed and corresponding Finite Element Method simulations of the steady state heat flow regimes and normalized radial temperature distributions were assessed. Our results show that the heat transfer and thus temperature fields generated from submarine HV cables buried within a range of sediments are highly variable. Coarse silts are shown to be purely conductive, producing temperature increases of >10 °C up to 40 cm from the source of 60 °C above ambient; fine sands demonstrate a transition from conductive to convective heat transfer between cf. 20 and 36 °C above ambient, with >10 °C heat increases occurring over a metre from the source of 55 °C above ambient; and very coarse sands exhibit dominantly convective heat transfer even at very low (cf. 7 °C) operating temperatures and reaching temperatures of up to 18 °C above ambient at a metre from the source at surface temperatures of only 18 °C. These findings are important for the surrounding near

  18. High voltage high repetition rate pulse using Marx topology

    Science.gov (United States)

    Hakki, A.; Kashapov, N.

    2015-06-01

    The paper describes Marx topology using MOSFET transistors. Marx circuit with 10 stages has been done, to obtain pulses about 5.5KV amplitude, and the width of the pulses was about 30μsec with a high repetition rate (PPS > 100), Vdc = 535VDC is the input voltage for supplying the Marx circuit. Two Ferrite ring core transformers were used to control the MOSFET transistors of the Marx circuit (the first transformer to control the charging MOSFET transistors, the second transformer to control the discharging MOSFET transistors).

  19. Highly-Efficient and Modular Medium-Voltage Converters

    Science.gov (United States)

    2015-09-28

    4. TITLE AND SUBTITLE Highly-Efficient and Modula Medium -Voltage Converters 6. AUTHOR(S) Maryam Saeedifard 7. PERFORMING ORGANIZATIC i NAME(S...realization of highly efficient, modular medium - voltage dc-ac and dc-dc energy conversion systems by development of new control strategies that improve the...Z39.18 a 01^ 100(0^5 Final Report for Grant N00014-14-1-0615 Highly-Efficient and Modular Medium -Voltage Converters Lead Organization: Georgia Tech

  20. System for instrumenting and manipulating apparatuses in high voltage

    Science.gov (United States)

    Jordan, Kevin

    2016-06-07

    A system for energizing, operating and manipulating apparatuses in high voltage systems. The system uses a dielectric gas such as SF.sub.6 as a driving power supply for a pneumatic motor which ultimately charges a battery or other energy storage device. The stored energy can then be used for instrumentation equipment, or to power any electrical equipment, in the high voltage deck. The accompanying method provides for the use of the SF6 system for operating an electrical device in a high-voltage environment.

  1. 低频唤醒在电厂高压开关柜触头温度监测中的应用%Application of Low Frequency Wake-up in High Voltage Switchgear Contact Temperature Monitoring for Power Plants

    Institute of Scientific and Technical Information of China (English)

    周晓莉

    2014-01-01

    针对无线式电厂高压开关柜触头温度监测中无线采集模块供电不稳和系统组网问题,提出了一种无线采集模块采用高方式间歇工作的方法,降低了功耗,解决了无线发送冲突的问题。给出了系统框图,阐述了工作原理,介绍了低频唤醒方式的具体实现方法。%This paper puts forward a method of wireless picking module by batch working according to low frequency wake-up. It solves the problem of instable current supply and system network of the wireless picking module in the system of high voltage switchgear contact temperature monitoring for power plants. The method reduces the power consumption and solves the problem of the conflict of wireless transmission. It provides the system block diagram of the module and represents its working principle. At last, it offers the detailed method of the low frequency wake-up.

  2. Determination of threshold and maximum operating electric stresses for selected high voltage insulation. Task 3: Investigation of high voltage capacitor insulation

    Science.gov (United States)

    Sosnowski, M.; Eager, G. S., Jr.

    1984-03-01

    The threshold voltage of capacitor insulation was investigated. The experimental work was performed on samples prepared from commercial polypropylene insulated, liquid-filled capacitors. The samples were vacuum-impregnated with the original capacitor insulating liquid obtained from the manufacturer. A limited number of full-size capacitor elements also were tested. Impulse voltage breakdown tests with dc voltage prestressing were performed at room temperature and 75 C. From the results of these tests, the threshold voltage of the samples of the capacitor insulation was determined at both temperatures and that of the whole capacitor elements at room temperature. The threshold voltage of the capacitor insulation was found to be approximately equal to the impulse breakdown voltage. No difference was found between the threshold voltage at room temperature and at 75 C. The threshold voltage of the whole capacitor elements at room temperature was found to be equal to approximately 80% of the threshold voltage of the capacitor insulation samples.

  3. Surge current capabilities and isothermal current-voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

    Science.gov (United States)

    Palmour, J. W.; Levinshtein, M. E.; Ivanov, P. A.; Zhang, Q. J.

    2015-06-01

    Isothermal forward current-voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers (JBS) have been studied for the first time. Isothermal characteristics were measured with JBS having a blocking voltage of 1700 V up to a current density j  ≈  4200 A cm-2 in the temperature range 297-460 K. Quasi-isothermal current-voltage characteristics of these devices were studied with injection of minority carriers (holes) up to j  ≈  7200 A cm-2 and ambient temperatures of 297 and 460 K. The isothermal forward current-voltage characteristics make it possible to numerically calculate (for example, by an iteration procedure) the overheating in an arbitrary operation mode.

  4. A Simple Method for Determining the Temperature Coefficient of Voltaic Cell Voltage

    Science.gov (United States)

    Saieed, Alfred E.; Davies, Keith M.

    1996-10-01

    Although use of the Nernst equation to illustrate the dependence of cell potential on half-cell concentrations is routinely covered in first-year college chemistry and high school AP chemistry classes, the temperature dependence of cell voltages is rarely encountered outside of the undergraduate physical chemistry laboratory. Even there, its coverage is somewhat limited because of the cost and sophistication of the instrumentation required. This article describes a relatively simple method for preparing voltaic cells, and through their temperature coefficient, _Eo/_T, it explores relationships between DeltaGo, DeltaHo and DeltaSo for the cell reactions involved.

  5. Integrated differential high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Farch, Kjartan

    2015-01-01

    In this paper an integrated differential high-voltage transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is designed and implemented in a 0.35 μm high-voltage process. Measurements are performed on the integrated circuit in order...... to assess its performance. The circuit generates pulses at differential voltage levels of 60V, 80V and 100 V, a frequency up to 5MHz and a measured driving strength of 1.75 V/ns with the CMUT connected. The total on-chip area occupied by the transmitting circuit is 0.18 mm2 and the power consumption...

  6. Optimization of Temperature Coefficient and Noise Analysis of MOSFET- Only Voltage Reference Circuit

    Directory of Open Access Journals (Sweden)

    Arathi.p

    2016-09-01

    Full Text Available The optimization of temperature coefficient and comparison of output noise of two MOSFET only voltage references are introduced. The circuit behavior is analytically described and the performance of the proposed circuits are confirmed through 180nm CMOS technology in virtuoso and the simulation results are presented. Both the circuits can be operated with supply voltage varies from 0.5-1.2V.The output voltage references varied over a temperature range of -25℃ to 50℃.

  7. High Voltage Bi-directional Flyback Converter for Capacitive Actuator

    DEFF Research Database (Denmark)

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    This paper presents a high voltage DC-DC converter topology for bi-directional energy transfer between a low voltage DC source and a high voltage capacitive load. The topology is a bi-directional flyback converter with variable switching frequency control during the charge mode, and constant...... switching frequency control during the discharge mode. The converter is capable of charging the capacitive load from 24 V DC source to 2.5 kV, and discharges it to 0 V. The flyback converter has been analyzed in detail during both charge and discharge modes, by considering all the parasitic elements...... in the converter, including the most dominating parameters of the high voltage transformer viz., self-capacitance and leakage inductance. The specific capacitive load for this converter is a dielectric electro active polymer (DEAP) actuator, which can be used as an effective replacement for conventional actuators...

  8. A compact, all solid-state LC high voltage generator.

    Science.gov (United States)

    Fan, Xuliang; Liu, Jinliang

    2013-06-01

    LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

  9. DEMONSTRATION BULLETIN: HIGH VOLTAGE ELECTRON BEAM TECHNOLOGY - HIGH VOLTAGE ENVIRONMENTAL APPLICATIONS, INC.

    Science.gov (United States)

    The high energy electron beam irradiation technology is a low temperature method for destroying complex mixtures of hazardous organic chemicals in solutions containing solids. The system consists of a computer-automated, portable electron beam accelerator and a delivery system. T...

  10. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    Science.gov (United States)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

  11. HIGH TEMPERATURE DISPLACEMENT SENSOR

    Institute of Scientific and Technical Information of China (English)

    Xu Longxiang; Zhang Jinyu; Schweitzer Gerhard

    2005-01-01

    A high temperature displacement sensor based on the principle of eddy-current is investigated. A new temperature compensation technique by using eddy-current effect is presented to satisfy the special requirement at high temperature up to 550℃. The experiment shows that the temperature compensation technique leads to good temperature stability for the sensors. The variation of the sensitivity as well as the temperature drift of the sensor with temperature compensation technique is only about 7.4% and 90~350 mV at 550℃ compared with that at room temperature, and that of the sensor without temperature compensation technique is about 31.2% and 2~3 V at 550℃ compared with that at room temperature. A new dynamic calibration method for the eddy-current displacement sensor is presented, which is very easy to be realized especially in high frequency and at high temperatures. The high temperature displacement sensors developed are successfully used at temperature up to 550℃ in a magnetic bearing system for more than 100 h.

  12. High performance dc-dc conversion with voltage multipliers

    Science.gov (United States)

    Harrigill, W. T.; Myers, I. T.

    1974-01-01

    The voltage multipliers using capacitors and diodes first developed by Cockcroft and Walton in 1932 were reexamined in terms of state of the art fast switching transistors and diodes, and high energy density capacitors. Because of component improvements, the voltage multiplier, used without a transformer, now appears superior in weight to systems now in use for dc-dc conversion. An experimental 100-watt 1000-volt dc-dc converter operating at 100 kHz was built, with a component weight of about 1 kg/kW. Calculated and measured values of output voltage and efficiency agreed within experimental error.

  13. Connection for transfer of Liquid Nitrogen from High Voltage to ground potential

    DEFF Research Database (Denmark)

    Rasmussen, Claus Nygaard; Hansen, Finn; Willén, Dag

    2001-01-01

    In order to operate a superconducting cable conductor it must be kept at a cryogenic temperature (e.g. using liquid nitrogen). The superconducting cable conductor is at high voltage and the cooling equipment is kept at ground potential. This requires a thermally insulating connection that is also...... strength. However, samples of ExpancelÒ (polymer foam) have recently proved to withstand large electrical fields at room temperature as well as at cryogenic temperatures. In this work, two prototype devices have been tested with respect to the partial discharge inception voltage, thermal insulation...

  14. High-frequency high-voltage high-power DC-to-DC converters

    Science.gov (United States)

    Wilson, T. G.; Owen, H. A.; Wilson, P. M.

    1982-01-01

    A simple analysis of the current and voltage waveshapes associated with the power transistor and the power diode in an example current-or-voltage step-up (buck-boost) converter is presented. The purpose of the analysis is to provide an overview of the problems and design trade-offs which must be addressed as high-power high-voltage converters are operated at switching frequencies in the range of 100 kHz and beyond. Although the analysis focuses on the current-or-voltage step-up converter as the vehicle for discussion, the basic principles presented are applicable to other converter topologies as well.

  15. Planar LTCC transformers for high voltage flyback converters: Part II.

    Energy Technology Data Exchange (ETDEWEB)

    Schofield, Daryl (NASCENTechnology, Inc., Watertown, SD); Schare, Joshua M., Ph.D.; Slama, George (NASCENTechnology, Inc., Watertown, SD); Abel, David (NASCENTechnology, Inc., Watertown, SD)

    2009-02-01

    This paper is a continuation of the work presented in SAND2007-2591 'Planar LTCC Transformers for High Voltage Flyback Converters'. The designs in that SAND report were all based on a ferrite tape/dielectric paste system originally developed by NASCENTechnoloy, Inc, who collaborated in the design and manufacturing of the planar LTCC flyback converters. The output/volume requirements were targeted to DoD application for hard target/mini fuzing at around 1500 V for reasonable primary peak currents. High voltages could be obtained but with considerable higher current. Work had begun on higher voltage systems and is where this report begins. Limits in material properties and processing capabilities show that the state-of-the-art has limited our practical output voltage from such a small part volume. In other words, the technology is currently limited within the allowable funding and interest.

  16. On-chip High-Voltage Generator Design

    CERN Document Server

    Tanzawa, Toru

    2013-01-01

    This book describes high-voltage generator design with switched-capacitor multiplier techniques.  The author provides various design techniques for switched-capacitor on-chip high-voltage generators, including charge pump circuits, regulators, level shifters, references, and oscillators.  Readers will see these techniques applied to system design in order to address the challenge of how the on-chip high-voltage generator is designed for Flash memories, LCD drivers, and other semiconductor devices to optimize the entire circuit area and power efficiency with a low voltage supply, while minimizing the cost.   ·         Shows readers how to design charge pump circuits with lower voltage operation, higher power efficiency, and smaller circuit area; ·         Describes comprehensive circuits and systems design of on-chip high-voltage generators; ·         Covers all the component circuit blocks, including charge pumps, pump regulators, level shifters, oscillators, and references.

  17. Influence of stator ventilation channel on the temperature field in the middle-size high voltage motor%定子通风槽钢对中型高压电机内温度场的影响

    Institute of Scientific and Technical Information of China (English)

    温嘉斌; 侯健; 于喜伟

    2016-01-01

    According to the structural dimensions of the motor,a YKK450-4,500 kW medium high-voltage asynchronous motor is taken as an example to construct the 3D mathematical model and physical model of stator and rotor radial ventilation ducts with the adjacent core segment of the high voltage asynchronous motor.Based on the theoretical knowledge of fluid mechanics and heat transfer,assumptions and boundary conditions were given to conduct calculation of the simulation,and the temperature field of the calculated region were analyzed.Finally, under the condition that the length of the ventilation channel of the stator remained unchanged,and the radial position near the shaft of the stator ventilation channel was changed, the model of ventilation dutcs was remodeled to obtain the influence of the installation position of the sta-tor ventilation channel on the temperature field in motor.The results show that radial position of the venti-lation channel affects the cooling effect of the stator windings, which provides a theoretical basis to im-prove the thermal dissipation performance of the motor and the optimization design of the motor ventilation structure.%该研究以一台YKK450-4、500 kW中型高压异步电动机为例,结合电机的结构尺寸,建立了高压异步电机三维定转子径向通风沟以及与之相邻铁心段的流体与固体耦合数学模型和物理模型;基于流体力学和传热学的理论知识,给出假设条件和边界条件,进行仿真计算,分析了计算区域的温度场;最后在定子通风槽钢长度不变的基础上,改变定子通风槽钢近轴端的径向位置,对通风沟进行重新建模,得到定子通风槽钢近轴端的径向位置对电机内温度场的影响。计算结果表明,通风槽钢的径向位置影响定子绕组的冷却效果。研究结果为提高电机的散热性能,对电机进行通风结构的优化设计提供了理论依据。

  18. The world's first high voltage GaN-on-Diamond power semiconductor devices

    Science.gov (United States)

    Baltynov, Turar; Unni, Vineet; Narayanan, E. M. Sankara

    2016-11-01

    This paper presents the detailed fabrication method and extensive electrical characterisation results of the first-ever demonstrated high voltage GaN power semiconductor devices on CVD Diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 μm and source field plate length of 3 μm show an off-state breakdown voltage of ∼1100 V. Temperature characterisation of capacitance-voltage characteristics and on-state characteristics provides insight on the temperature dependence of key parameters such as threshold voltage, 2DEG sheet carrier concentration, specific on-state resistance, and drain saturation current in the fabricated devices.

  19. Reliability and Characterization of High Voltage Power Capacitors

    Science.gov (United States)

    2014-03-01

    ix LIST OF FIGURES Figure 1.   System level overview of IPC EVCS (from [3]). ..............................................2   Figure 2...permittivity EVCS electric vehicle charging system GPIB general-purpose interface bus GW giga-watt HVST high voltage stress test IV current voltage...Power Converter (IPC). This converter is being used for the Electric Vehicle Charging Station ( EVCS ), currently being investigated and installed in

  20. A New Phase-Shifted Cascade High Voltage Inverter

    Institute of Scientific and Technical Information of China (English)

    Lau Eng Tin

    2005-01-01

    This paper presents a unique novel design of the phase-shifted cascade high voltage inverter. Thehigh voltage inverter utilizes fewer power switches and supplies a balance load. The usage of phase shifttransformer and phase shifting SPWM ensures that input and output harmonic wave content is low and outputvoltage change (du/dt) has a low rate, meeting all the requirements of the power authorities. The most out-standing feature is the energy saving with very fast cost recovery.

  1. Requirement of ultra-high voltage GIS arrester to voltage gradient of metal-oxide varistor

    Institute of Scientific and Technical Information of China (English)

    HE JinLiang; HU Jun; MENG BoWen; ZHANG Bo; ZHU Bin; CHEN ShuiMing; ZENG Rong

    2009-01-01

    The surge arrestor with excellent protection characteristics would decrease the overvoltage level ap-plied on the power apparatus to reduce their insulation levels and manufacturing bottleneck. The ar-restor for the 1000-kV ultra-high voltage ac power transmission system is designed as tank-type structure. The field-circuit combination numerical method combining the three-dimensional finite ele-ment method with circuit is proposed to analyze the potential distribution of GIS arrester. By comparing several design schemes, the most effective method to improve the potential distribution along the varistor column is to increase the voltage gradient of the ZnO varistor. Synthesizing several influential factors, the suitable voltage gradient of ZnO varistor should be controlled to 435 V/mm, and the re-sulted nonuniform degree of the potential distribution along the varistor column inside the GIS arrestor would be controlled smaller than 10%. The result in this paper provides the fundamental technical in-dex for the study of the high voltage gradient ZnO varistors.

  2. Requirement of ultra-high voltage GIS arrester to voltage gradient of metal-oxide varistor

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The surge arrester with excellent protection characteristics would decrease the overvoltage level ap- plied on the power apparatus to reduce their insulation levels and manufacturing bottleneck. The arrester for the 1000-kV ultra-high voltage ac power transmission system is designed as tank-type structure. The field-circuit combination numerical method combining the three-dimensional finite element method with circuit is proposed to analyze the potential distribution of GIS arrester. By comparing several design schemes, the most effective method to improve the potential distribution along the varistor column is to increase the voltage gradient of the ZnO varistor. Synthesizing several influential factors, the suitable voltage gradient of ZnO varistor should be controlled to 435 V/mm, and the resulted nonuniform degree of the potential distribution along the varistor column inside the GIS arrester would be controlled smaller than 10%. The result in this paper provides the fundamental technical index for the study of the high voltage gradient ZnO varistors.

  3. High-Temperature Superconductivity

    Science.gov (United States)

    Tanaka, Shoji

    2006-12-01

    A general review on high-temperature superconductivity was made. After prehistoric view and the process of discovery were stated, the special features of high-temperature superconductors were explained from the materials side and the physical properties side. The present status on applications of high-temperature superconductors were explained on superconducting tapes, electric power cables, magnets for maglev trains, electric motors, superconducting quantum interference device (SQUID) and single flux quantum (SFQ) devices and circuits.

  4. Temperature current-voltage characterisation of MOCVD grown InGaN/GaN MQW LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Moldovan, Grigore; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom); Phillips, Andrew [phconsult Ltd., 54 Covent Garden, Cambridge, CB1 2HR (United Kingdom); Thrush, E.J. [Thomas Swan Scientific Equipment Limited, Buckingway Business Park, Cambridge, CB4 5UK (United Kingdom)

    2006-06-15

    A methodology of temperature current-voltage characterisation for blue GaN-based LED is described, with emphasis on artefacts arising from self-heating at high forward currents and voltage transients at low forward currents. Examples of LEDs with Al{sub 2}O{sub 3} and SiC substrates are discussed, with methods of accounting and avoiding these errors. For the devices studied here it is found that tunnelling dominates the charge transport and that two parallel conduction pathways are present. A method of interpretation of extracted data is also presented, in the context of desired device performance. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Science.gov (United States)

    2010-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad tracks...

  6. A sub-1 V high-precision CMOS bandgap voltage reference

    Institute of Scientific and Technical Information of China (English)

    廖峻; 赵毅强; 耿俊峰

    2012-01-01

    A third-order,sub-1 V bandgap voltage reference design for low-power supply,high-precision applications is presented.This design uses a current-mode compensation technique and temperature-dependent resistor ratio to obtain high-order curvature compensation.The circuit was designed and fabricated by SMIC 0.18μm CMOS technology.It produces an output reference of 713.6 mV.The temperature coefficient is 3.235 pprn/℃ in the temperature range of-40 to 120 ℃,with a line regulation of 0.199 mV/V when the supply voltage varies from 0.95 to 3 V.The average current consumption of the whole circuit is 49 μA at the supply voltage of 1 V.

  7. High voltage switch triggered by a laser-photocathode subsystem

    Science.gov (United States)

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

    2013-01-08

    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  8. Voltage source inverters for high power, variable-voltage DC power sources

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z. [Department of Engineering and Technology, De Montfort University, Queens Building, The Gateway, Leicester, LE1 9BH, (United Kingdom); Spooner, E. [School of Engineering, University of Durham, Science Laboratories, South Rd, Durham, DRI 3LE, (United Kingdom)

    2001-09-01

    The paper discusses the applications of voltage source inverter (VSI) based power electronic systems for interfacing variable-voltage DC sources to the grid. A variable-speed wind power conversion system is used for illustration, where the VSI-based interface needs to convert a variable DC voltage to a nearly constant AC voltage with high-quality power. The power control principles of VSI are described. Various system configurations and switching strategies are examined by analysis, simulation and experimental methods. It is shown that better utilisation of semiconductors and more flexible control may be achieved by using a separately controlled DC link, rather than a directly connected VSI that has to operate at a lower modulation ratio at higher power. In some cases, multipulse inverter structures may be preferred, despite higher component count, because of reduced switching losses, fault tolerance and the absence of filters. The solutions developed in the study could be applied at a different scale to other renewable energy sources, such as wave or solar photovoltaic devices. (Author)

  9. Experimental investigation of SDBD plasma actuator driven by AC high voltage with a superimposed positive pulse bias voltage

    Science.gov (United States)

    Qi, Xiao-Hua; Yan, Hui-Jie; Yang, Liang; Hua, Yue; Ren, Chun-Sheng

    2017-08-01

    In this work, a driven voltage consisting of AC high voltage with a superimposed positive pulse bias voltage ("AC+ Positive pulse bias" voltage) is adopted to study the performance of a surface dielectric barrier discharge plasma actuator under atmospheric conditions. To compare the performance of the actuator driven by single-AC voltage and "AC+ Positive pulse bias" voltage, the actuator-induced thrust force and power consumption are measured as a function of the applied AC voltage, and the measured results indicate that the thrust force can be promoted significantly after superimposing the positive pulse bias voltage. The physical mechanism behind the thrust force changes is analyzed by measuring the optical properties, electrical characteristics, and surface potential distribution. Experimental results indicate that the glow-like discharge in the AC voltage half-cycle, next to the cycle where a bias voltage pulse has been applied, is enhanced after applying the positive pulse bias voltage, and this perhaps is the main reason for the thrust force increase. Moreover, surface potential measurement results reveal that the spatial electric field formed by the surface charge accumulation after positive pulse discharge can significantly affect the applied external electric field, and this perhaps can be responsible for the experimental phenomenon that the decrease of thrust force is delayed by pulse bias voltage action after the filament discharge occurs in the glow-like discharge region. The schlieren images further verify that the actuator-induced airflow velocity increases with the positive pulse voltage.

  10. Highly efficient high temperature electrolysis

    DEFF Research Database (Denmark)

    Hauch, Anne; Ebbesen, Sune; Jensen, Søren Højgaard;

    2008-01-01

    High temperature electrolysis of water and steam may provide an efficient, cost effective and environmentally friendly production of H-2 Using electricity produced from sustainable, non-fossil energy sources. To achieve cost competitive electrolysis cells that are both high performing i.e. minimum...... internal resistance of the cell, and long-term stable, it is critical to develop electrode materials that are optimal for steam electrolysis. In this article electrolysis cells for electrolysis of water or steam at temperatures above 200 degrees C for production of H-2 are reviewed. High temperature...... electrolysis is favourable from a thermodynamic point of view, because a part of the required energy can be supplied as thermal heat, and the activation barrier is lowered increasing the H-2 production rate. Only two types of cells operating at high temperature (above 200 degrees C) have been described...

  11. An optical remote controlled high voltage dome for electron microscopes

    Energy Technology Data Exchange (ETDEWEB)

    Ruan, S. [The Enrico Fermi Institute, The University of Chicago, Chicago, Illinois 60637 (United States); Kapp, O.H. [The Department of Radiology and the Enrico Fermi Institute, The University of Chicago, Chicago, Illinois 60637 (United States)

    1995-08-01

    A low cost high voltage dome has been completed for an electron microscope with a thermal emission tip as electron source. Two fibers are used to provide communication across the high electrical field zone between the computer and the dome. This system provides a reliable method to operate the dome circuitry (floating at high voltage) and ensures the safety of both the computer system and the operator. Because of the application of ``dummy`` serial data transfer, the least number of fibers and associated components are used, providing a relatively low-cost solution to this problem. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  12. A design of High-precision High-Voltage Fiber-Optic Analog Signal Isolation Converter

    Institute of Scientific and Technical Information of China (English)

    李建伟; 许留伟; 刘小宁; 杨雷

    2002-01-01

    This paper introduces a design of high-prectison high-voltage fiber-optic analog sig-nal isoaltion converter based on the technology of Voltage-to-Fequency (V/F)and Frequency -to Voltage(F/V) conversion It describes the principle ,system configuration and hardware design

  13. High-voltage pulsed generator for dynamic fragmentation of rocks.

    Science.gov (United States)

    Kovalchuk, B M; Kharlov, A V; Vizir, V A; Kumpyak, V V; Zorin, V B; Kiselev, V N

    2010-10-01

    A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ∼50 ns, current amplitude of ∼6 kA with the 40 Ω active load, and ∼20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

  14. Changes in CdS/CdTe Solar Cells Subjected to Elevated Temperature, Voltage and Illumination

    Science.gov (United States)

    Demtsu, Samuel; Nagle, Tim

    2003-10-01

    CdTe/CdS solar cells have been known to exhibit degradation in performance after being subjected to elevated temperature, voltage and illumination. These conditions are collectively referred to as "stress". We have studied and presented CdTe/CdS cell degradation under different stress conditions of devices from First Solar Inc., the University of South Florida and the University of Toledo. All cells were stressed in the light (close to 100 mW/cm2) for 56 days at elevated temperature of 900C at two different biases, short circuit (SC) and open circuit (OC). The stress condition surpasses the operation conditions expected in the field. To characterize the cells, we have measured current density as function of the applied voltage (JV), capacitance vs bias voltage (CV) and quantum efficiency (QE) measurements before and after exposure to stress. To investigate the spatial non-uniformity of photocurrent collection induced by stress we have done Light Beam-Induced Current (LBIC) measurement. The effect of the stress on the photovoltaic parameters short-circuit current (Jsc), open-circuit voltage (Voc), Fill-Factor (FF), and efficiency is presented and discussed. Carrier density as a function of the distance from the semiconductor junction is extracted from the C-V measurements. We have seen some variations between cells and degradation was not monotonic with stress time. The highly probable explanation for the degradation of the cells after the stress is that mobile copper ions diffuse out of the back contact towards the primary junction leaving a depletion of Cu in the back contact, which increases the contact barrier.

  15. OFDM-based Low-voltage Powerline High Rate Communication

    Institute of Scientific and Technical Information of China (English)

    ZHANG You-bing(张有兵); CHENG Shi-jie(程时杰); Joseph Nguimbis; XIONG Lan(熊兰)

    2004-01-01

    Based on the experimental results, a simplified model for low-voltage powerline used as a high frequency communication channel is presented. With this model, the Orthogonal Frequency Division Multiplexing (OFDM) based high rate digital communication over low-voltage powerline is analyzed and simulated. The capability of thc signal transmission system in overcoming multi-path interference and selection of the system parameters are discussed. And time-domain simulation is carried out to investigate the transmission capability of the OFDM cammunication system for different mapping schemes and transmission power levels. Simulation results show that it is possible to realize high rate digital communication over iow-voltage powerliue using OFDM when the transmitted power is large enough.

  16. High-voltage live cleaning robot design based on security

    Institute of Scientific and Technical Information of China (English)

    XIE Xiao-peng; XIA Hong-wei; YANG Ru-qing

    2005-01-01

    High-Voltage Live Cleaning Robot works in a hot-line environment (220 kV/330 kV), and so the safety of its application and equipment is most important. In terms of safety, the designs of robot mechanism and control system have been discussed, and the test data are given regarding the control system of a model machine. The model machine of a high-voltage live cleaning robot can satisfy the needs of basic cleaning in common conditions. From manual operation to automation, the cleaning efficiency is improved. The robot can decrease the amount of work, and guarantee security. Among high-voltage live cleaning equipment in China, the cleaning robot is advanced in automation and intelligence.

  17. Effect of temperature and loading on output voltage of lead zirconate titanate (PZT-5A) piezoelectric energy harvester

    Science.gov (United States)

    Butt, Z.; Pasha, R. A.

    2016-08-01

    Energy harvesting is the process of acquiring energy from the external sources and then further used to drive any system. Piezoelectric material was operated at various temperature but the characterization of the material mostly performed at room temperature. The depolarization in piezoelectric material occurs when the material is heated to its curie temperature and when mechanical stresses are high to disturb the properties of the material. The aim of this paper is to study the performance of lead zirconate titanate (PZT-5A) piezoelectric material under various temperatures and loading conditions. The output voltage of piezoelectric material decreases with increase of temperature. It was found that output voltage from the harvester increases when loading increases while its temperature decreases.

  18. High-Voltage, Low-Power BNC Feedthrough Terminator

    Science.gov (United States)

    Bearden, Douglas

    2012-01-01

    This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

  19. Integrated reconfigurable high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2015-01-01

    In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

  20. Integrated reconfigurable high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger;

    2015-01-01

    In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

  1. Electric Insulation Detection Method for High-voltage Insulators

    Directory of Open Access Journals (Sweden)

    Wang Jiajun

    2013-07-01

    Full Text Available The principle of partial discharge detection is that through partial bridged discharge under high voltage electric field, it detects the inner air-filled cavity of high-voltage insulators. And it is a nondestructive detection method based on discharge magnitude to judge the insulation quality. The detecting system that adopts the partial discharge detection is more rigorous than testing system for electricity products, which must have small discharge capacity and higher sensitivity. This paper describes the principles of partial discharge detection and analysis insulation detection.

  2. High voltage pulsed cable design: a practical example

    Energy Technology Data Exchange (ETDEWEB)

    Kewish, R.W. Jr.; Boicourt, G.P.

    1979-01-01

    The design of optimum high voltage pulse cable is difficult because very little emperical data are available on performance in pulsed applications. This paper follows the design and testing of one high voltage pulse cable, 40/100 trigger cable. The design was based on an unproven theory and the impressive outcome lends support to the theory. The theory is outlined and it is shown that there exists an inductance which gives a cable of minimum size for a given maximum stress. Test results on cable manufactured according to the design are presented and compared with the test results on the cable that 40/100 replaces.

  3. High-voltage, high-current, solid-state closing switch

    Energy Technology Data Exchange (ETDEWEB)

    Focia, Ronald Jeffrey

    2017-08-22

    A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

  4. Temperature and voltage coupling to channel opening in transient receptor potential melastatin 8 (TRPM8).

    Science.gov (United States)

    Raddatz, Natalia; Castillo, Juan P; Gonzalez, Carlos; Alvarez, Osvaldo; Latorre, Ramon

    2014-12-19

    Expressed in somatosensory neurons of the dorsal root and trigeminal ganglion, the transient receptor potential melastatin 8 (TRPM8) channel is a Ca(2+)-permeable cation channel activated by cold, voltage, phosphatidylinositol 4,5-bisphosphate, and menthol. Although TRPM8 channel gating has been characterized at the single channel and macroscopic current levels, there is currently no consensus regarding the extent to which temperature and voltage sensors couple to the conduction gate. In this study, we extended the range of voltages where TRPM8-induced ionic currents were measured and made careful measurements of the maximum open probability the channel can attain at different temperatures by means of fluctuation analysis. The first direct measurements of TRPM8 channel temperature-driven conformational rearrangements provided here suggest that temperature alone is able to open the channel and that the opening reaction is voltage-independent. Voltage is a partial activator of TRPM8 channels, because absolute open probability values measured with fully activated voltage sensors are less than 1, and they decrease as temperature rises. By unveiling the fast temperature-dependent deactivation process, we show that TRPM8 channel deactivation is well described by a double exponential time course. The fast and slow deactivation processes are temperature-dependent with enthalpy changes of 27.2 and 30.8 kcal mol(-1). The overall Q10 for the closing reaction is about 33. A three-tiered allosteric model containing four voltage sensors and four temperature sensors can account for the complex deactivation kinetics and coupling between voltage and temperature sensor activation and channel opening.

  5. Digitally Programmable High-Q Voltage Mode Universal Filter

    Directory of Open Access Journals (Sweden)

    D. Singh

    2013-12-01

    Full Text Available A new low-voltage low-power CMOS current feedback amplifier (CFA is presented in this paper. This is used to realize a novel digitally programmable CFA (DPCFA using transistor arrays and MOS switches. The proposed realizations nearly allow rail-to-rail swing capability at all the ports. Class-AB output stage ensures low power dissipation and high current drive capability. The proposed CFA/ DPCFA operates at supply voltage of ±0.75 V and exhibits bandwidth better than 95 MHz. An application of the DPCFA to realize a novel voltage mode high-Q digitally programmable universal filter (UF is given. Performances of all the proposed circuits are verified by PSPICE simulation using TSMC 0.25μm technology parameters.

  6. Cardiac stimulation with high voltage discharge from stun guns.

    Science.gov (United States)

    Nanthakumar, Kumaraswamy; Massé, Stephane; Umapathy, Karthikeyan; Dorian, Paul; Sevaptsidis, Elias; Waxman, Menashe

    2008-05-20

    The ability of an electrical discharge to stimulate the heart depends on the duration of the pulse, the voltage and the current density that reaches the heart. Stun guns deliver very short electrical pulses with minimal amount of current at high voltages. We discuss external stimulation of the heart by high voltage discharges and review studies that have evaluated the potential of stun guns to stimulate cardiac muscle. Despite theoretical analyses and animal studies which suggest that stun guns cannot and do not affect the heart, 3 independent investigators have shown cardiac stimulation by stun guns. Additional research studies involving people are needed to resolve the conflicting theoretical and experimental findings and to aid in the design of stun guns that are unable to stimulate the heart.

  7. High Voltage Operation of Helical Pulseline Structures for Ion Acceleration

    CERN Document Server

    Waldron, William; Reginato, Lou

    2005-01-01

    The basic concept for the acceleration of heavy ions using a helical pulseline requires the launching of a high voltage traveling wave with a waveform determined by the beam transport physics in order to maintain stability and acceleration.* This waveform is applied to the front of the helix, creating over the region of the ion bunch a constant axial acceleration electric field that travels down the line in synchronism with the ions. Several methods of driving the helix have been considered. Presently, the best method of generating the waveform and also maintaining the high voltage integrity appears to be a transformer primary loosely coupled to the front of the helix, generating the desired waveform and achieving a voltage step-up from primary to secondary (the helix). This can reduce the drive voltage that must be brought into the helix enclosure through the feedthroughs by factors of 5 or more. The accelerating gradient is limited by the voltage holding of the vacuum insulator, and the material and helix g...

  8. High-Voltage LED Light Engine with Integrated Driver

    Energy Technology Data Exchange (ETDEWEB)

    Soer, Wouter [Lumileds LLC, San Jose, CA (United States)

    2016-02-29

    LED luminaires have seen dramatic changes in cost breakdown over the past few years. The LED component cost, which until recently was the dominant portion of luminaire cost, has fallen to a level of the same order as the other luminaire components, such as the driver, housing, optics etc. With the current state of the technology, further luminaire performance improvement and cost reduction is realized most effectively by optimization of the whole system, rather than a single component. This project focuses on improving the integration between LEDs and drivers. Lumileds has developed a light engine platform based on low-cost high-power LEDs and driver topologies optimized for integration with these LEDs on a single substrate. The integration of driver and LEDs enables an estimated luminaire cost reduction of about 25% for targeted applications, mostly due to significant reductions in driver and housing cost. The high-power LEDs are based on Lumileds’ patterned sapphire substrate flip-chip (PSS-FC) technology, affording reduced die fabrication and packaging cost compared to existing technology. Two general versions of PSS-FC die were developed in order to create the desired voltage and flux increments for driver integration: (i) small single-junction die (0.5 mm2), optimal for distributed lighting applications, and (ii) larger multi-junction die (2 mm2 and 4 mm2) for high-power directional applications. Two driver topologies were developed: a tapped linear driver topology and a single-stage switch-mode topology, taking advantage of the flexible voltage configurations of the new PSS-FC die and the simplification opportunities enabled by integration of LEDs and driver on the same board. A prototype light engine was developed for an outdoor “core module” application based on the multi-junction PSS-FC die and the single-stage switch-mode driver. The light engine meets the project efficacy target of 128 lm/W at a luminous flux

  9. High-Voltage LED Light Engine with Integrated Driver

    Energy Technology Data Exchange (ETDEWEB)

    Soer, Wouter [Lumileds LLC, San Jose, CA (United States)

    2016-02-29

    LED luminaires have seen dramatic changes in cost breakdown over the past few years. The LED component cost, which until recently was the dominant portion of luminaire cost, has fallen to a level of the same order as the other luminaire components, such as the driver, housing, optics etc. With the current state of the technology, further luminaire performance improvement and cost reduction is realized most effectively by optimization of the whole system, rather than a single component. This project focuses on improving the integration between LEDs and drivers. Lumileds has developed a light engine platform based on low-cost high-power LEDs and driver topologies optimized for integration with these LEDs on a single substrate. The integration of driver and LEDs enables an estimated luminaire cost reduction of about 25% for targeted applications, mostly due to significant reductions in driver and housing cost. The high-power LEDs are based on Lumileds’ patterned sapphire substrate flip-chip (PSS-FC) technology, affording reduced die fabrication and packaging cost compared to existing technology. Two general versions of PSS-FC die were developed in order to create the desired voltage and flux increments for driver integration: (i) small single-junction die (0.5 mm2), optimal for distributed lighting applications, and (ii) larger multi-junction die (2 mm2 and 4 mm2) for high-power directional applications. Two driver topologies were developed: a tapped linear driver topology and a single-stage switch-mode topology, taking advantage of the flexible voltage configurations of the new PSS-FC die and the simplification opportunities enabled by integration of LEDs and driver on the same board. A prototype light engine was developed for an outdoor “core module” application based on the multi-junction PSS-FC die and the single-stage switch-mode driver. The light engine meets the project efficacy target of 128 lm/W at a luminous flux greater than 4100 lm, a correlated

  10. The effects of high-voltage pulse electric discharges on ion adsorption on activated carbons

    Science.gov (United States)

    Gafurov, M. M.; Sveshnikova, D. A.; Larin, S. V.; Rabadanov, K. Sh.; Shabanova, Z. E.; Yusupova, A. A.; Ramazanov, A. Sh.

    2008-07-01

    The effects of high-voltage pulse electric discharges (HPED) on sorption of boron and sulfate ions on activated carbons of different kinds (KM-2, BAU, DAK) were investigated. The effect of HPED activation on the sorption characteristics of the systems was found to be similar to the temperature effect.

  11. Automatic Distance Monitoring System of Contact Connections in High Voltage Equipment of Electric Power Lines

    Directory of Open Access Journals (Sweden)

    M. Diachenko

    2013-01-01

    Full Text Available The developed automatic distance monitoring system of contact connections in high voltage equipment is based on technology of sensor circuits. The paper shows application of control methodology for contact connections in accordance with time rate of conductor temperature changes and contact connection and also direct measurement of transient resistance.

  12. High temperature battery. Hochtemperaturbatterie

    Energy Technology Data Exchange (ETDEWEB)

    Bulling, M.

    1992-06-04

    To prevent heat losses of a high temperature battery, it is proposed to make the incoming current leads in the area of their penetration through the double-walled insulating housing as thermal throttle, particularly spiral ones.

  13. 30 CFR 75.822 - Underground high-voltage longwall cables.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Underground high-voltage longwall cables. 75... MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.822 Underground high-voltage longwall cables. In addition to the high...

  14. Ultra-compact Marx-type high-voltage generator

    Science.gov (United States)

    Goerz, David A.; Wilson, Michael J.

    2000-01-01

    An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

  15. High-temperature superconductors

    CERN Document Server

    Saxena, Ajay Kumar

    2010-01-01

    The present book aims at describing the phenomenon of superconductivity and high-temperature superconductors discovered by Bednorz and Muller in 1986. The book covers the superconductivity phenomenon, structure of high-Tc superconductors, critical currents, synthesis routes for high Tc materials, superconductivity in cuprates, the proximity effect and SQUIDs, theories of superconductivity and applications of superconductors.

  16. High Temperature ESP Monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Jack Booker; Brindesh Dhruva

    2011-06-20

    The objective of the High Temperature ESP Monitoring project was to develop a downhole monitoring system to be used in wells with bottom hole well temperatures up to 300°C for measuring motor temperature, formation pressure, and formation temperature. These measurements are used to monitor the health of the ESP motor, to track the downhole operating conditions, and to optimize the pump operation. A 220 ºC based High Temperature ESP Monitoring system was commercially released for sale with Schlumberger ESP motors April of 2011 and a 250 ºC system with will be commercially released at the end of Q2 2011. The measurement system is now fully qualified, except for the sensor, at 300 °C.

  17. Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs

    Science.gov (United States)

    Green, Ron; Lelis, Aivars; Habersat, Daniel

    2016-04-01

    This work reports on three important aspects of threshold-voltage instability in SiC power MOSFETs: (1) the threshold-voltage bias-temperature instability observed in commercial devices from two leading manufacturers, (2) a summary of the basic mechanisms driving this instability, and (3) the need for an improved test method for evaluating these devices. Even under significant overstress conditions, no negative threshold-voltage shift was observed in the most-recent-vintage commercial devices from one of the manufacturers during a -15 V, 175 °C negative-bias temperature stress lasting 120 h.

  18. High Temperature Electrolysis

    DEFF Research Database (Denmark)

    Elder, Rachael; Cumming, Denis; Mogensen, Mogens Bjerg

    2015-01-01

    High temperature electrolysis of carbon dioxide, or co-electrolysis of carbon dioxide and steam, has a great potential for carbon dioxide utilisation. A solid oxide electrolysis cell (SOEC), operating between 500 and 900. °C, is used to reduce carbon dioxide to carbon monoxide. If steam is also...... input to the cell then hydrogen is produced giving syngas. This syngas can then be further reacted to form hydrocarbon fuels and chemicals. Operating at high temperature gives much higher efficiencies than can be achieved with low temperature electrolysis. Current state of the art SOECs utilise a dense...

  19. Digital measurement system for the LHC klystron high voltage modulator.

    CERN Document Server

    Mikkelsen, Anders

    Accelerating voltage in the Large Hadron Collider (LHC) is created by a means of 16 superconducting standing wave RF cavities, each fed by a 400MHz/300kW continuous wave klystron amplifier. Part of the upgrade program for the LHC long shutdown one is to replace the obsolete analogue current and voltage measurement circuitry located in the high voltage bunkers by a new, digital system, using ADCs and optical fibres. A digital measurement card is implemented and integrated into the current HV modulator oil tank (floating at -58kV) and interfaced to the existing digital VME boards collecting the data for several klystrons at the ground potential. Measured signals are stored for the logging, diagnostics and post-mortem analysis purposes.

  20. [Fatal electric arc accidents due to high voltage].

    Science.gov (United States)

    Strauch, Hansjürg; Wirth, Ingo

    2004-01-01

    The frequency of electric arc accidents has been successfully reduced owing to preventive measures taken by the professional association. However, the risk of accidents has continued to exist in private setting. Three fatal electric arc accidents caused by high voltage are reported with reference to the autopsy findings.

  1. Optical Spectra of the High Voltage Erosive Water Discharge

    CERN Document Server

    Pirozerski, A L

    2008-01-01

    In the present paper kinetics of emission spectra of the high voltage erosive water discharge at near ultraviolet and visible spectral ranges has been investigated. Obtained results show a similarity of physical properties of this discharge (and of corresponding plasmoids) to that of some other types of erosional discharges which also result in the formation of dust-gas fireballs.

  2. Intense neutron source: high-voltage power supply specifications

    Energy Technology Data Exchange (ETDEWEB)

    Riedel, A.A.

    1980-08-01

    This report explains the need for and sets forth the electrical, mechanical and safety specifications for a high-voltage power supply to be used with the intense neutron source. It contains sufficient information for a supplier to bid on such a power supply.

  3. Measurements for validation of high voltage underground cable modelling

    DEFF Research Database (Denmark)

    Bak, Claus Leth; Gudmundsdottir, Unnur Stella; Wiechowski, Wojciech Tomasz

    2009-01-01

    This paper discusses studies concerning cable modelling for long high voltage AC cable lines. In investigating the possibilities of using long cables instead of overhead lines, the simulation results must be trustworthy. Therefore a model validation is of great importance. This paper describes...

  4. Space charge accumulation in polymeric high voltage DC cable systems

    NARCIS (Netherlands)

    Bodega, R.

    2006-01-01

    One of the intrinsic properties of the polymeric high voltage (HV) direct current (DC) cable insulation is the accumulation of electrostatic charges. Accumulated charges distort the initial Laplacian distribution of the electric field, leading to a local field enhancement that may cause insulation d

  5. High-voltage (> 1 kV) SiC Schottky barrier diodes with low on-resistance

    Energy Technology Data Exchange (ETDEWEB)

    Kimoto, Tsunenobu; Urushidani, Tatsuo; Kobayashi, Sota; Matsunami, Hiroyuki (Kyoto Univ. (Japan). Dept. of Electrical Engineering)

    1993-12-01

    Au/6H-SiC Schottky barrier diodes with high blocking voltages were successfully fabricated using layers grown by step-controlled epitaxy. A breakdown voltage over 1,100 V could be achieved, which is the highest ever reported for silicon carbide (SiC) Schottky barrier diodes. These high-voltage SiC rectifiers had specific on-resistances lower than the theoretical limits of Si rectifiers by more than one order of magnitude. The specific on-resistance increased with temperature according to T[sup 2.0] dependence. The diodes showed good characteristics at temperature as high as 400 C.

  6. High Voltage Testing of a 5-meter Prototype Triaxial HTS Cable

    Energy Technology Data Exchange (ETDEWEB)

    Sauers, Isidor [ORNL; James, David Randy [ORNL; Ellis, Alvin R [ORNL; Tuncer, Enis [ORNL; Pace, Marshall O [ORNL; Gouge, Michael J [ORNL; Demko, Jonathan A [ORNL; Lindsay, David T [ORNL

    2007-01-01

    High voltage tests were performed on a 5-m long prototype triaxial HTS cable (supplied by Ultera) at ORNL in preparation for installation of a 200-m HTS cable of the same design at the AEP utility substation in Columbus, Ohio. The triaxial design comprises three concentric phases and shield around a common former with the phase to phase dielectric at cryogenic temperature. Advantages of this design include increased current density, a reduced amount of HTS tape needed, and reduced heat load. The phase to phase voltage will be 13.2 kVrms (7.6 kVrms to ground). Preliminary testing was done on half-scale and full-scale terminations which successfully passed AC withstand, partial discharge, and impulse tests. High voltage tests conducted on the 5-m cable with the cable straight and after bending 90 degrees were ac withstand to 39 kVrms, partial discharge inception, and a minimum of 10 positive and 10 negative lightning waveform impulses at 110 kV. Phase to phase insulation was tested by applying high voltage to each phase one at a time with all the other phases grounded. Partial discharge data will be presented. The 5-m prototype triaxial HTS cable passed all the HV tests performed, with a PD inception voltage significantly above the required voltage.

  7. 30 CFR 18.53 - High-voltage longwall mining systems.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage longwall mining systems. 18.53... and Design Requirements § 18.53 High-voltage longwall mining systems. (a) In each high-voltage motor-starter enclosure, with the exception of a controller on a high-voltage shearer, the disconnect...

  8. 30 CFR 77.802 - Protection of high-voltage circuits; neutral grounding resistors; disconnecting devices.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of high-voltage circuits; neutral... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.802 Protection of high-voltage circuits; neutral grounding resistors; disconnecting devices. High-voltage...

  9. 30 CFR 75.810 - High-voltage trailing cables; splices.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables; splices. 75.810... SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.810 High-voltage trailing cables; splices. In the case of high-voltage cables used as...

  10. 30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage power centers and transformers... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of examination... record shall be kept in a book approved by the Secretary. High-Voltage Longwalls Source: 67 FR 11001,...

  11. 30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables; minimum design... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing cables; minimum design requirements. (a) High-voltage trailing cables used in resistance grounded systems shall...

  12. 30 CFR 77.800 - High-voltage circuits; circuit breakers.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers. High-voltage circuits supplying power to portable or mobile equipment shall be protected by suitable...

  13. Unlikely Combination of Experiments With a Novel High-Voltage CIGS Photovoltaic Array: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    del Cueto, J. A.; Sekulic, B. R.

    2006-05-01

    A new high-voltage array comprising bipolar strings of copper indium gallium diselenide (CIGS) photovoltaic (PV) modules was inaugurated in 2005. It is equipped with a unique combination of tests, which likely have never before been deployed simultaneously within a single array: full current-voltage (I-V) traces, high-voltage leakage current measurements, and peak-power tracking or temporal stepped-bias profiling. The array nominally produces 1 kW power at 1 sun. The array's electrical characteristics are continuously monitored and controlled with a programmable electronic load interfaced to a data acquisition system (DAS), that also records solar and meteorological data. The modules are mounted with their frames electrically isolated from earth ground, in order to facilitate measurement of the leakage currents that arise between the high voltage bias developed in the series-connected cells and modules and their mounting frames. Because the DAS can perform stepped biasing of the array as a function of time, synchronous detection of the leakage current data with alternating bias is available. Leakage current data and their dependence on temperature and voltage are investigated. Array power data are analyzed across a wide range of varying illuminations and temperatures from the I-V traces. Array performance is also analyzed from an energy output perspective using peak-power tracking data.

  14. High Temperature Piezoelectric Drill

    Science.gov (United States)

    Bao, Xiaoqi; Scott, James; Boudreau, Kate; Bar-Cohen, Yoseph; Sherrit, Stewart; Badescu, Mircea; Shrout, Tom; Zhang, Shujun

    2009-01-01

    The current NASA Decadal mission planning effort has identified Venus as a significant scientific target for a surface in-situ sampling/analyzing mission. The Venus environment represents several extremes including high temperature (460 deg C), high pressure (9 MPa), and potentially corrosive (condensed sulfuric acid droplets that adhere to surfaces during entry) environments. This technology challenge requires new rock sampling tools for these extreme conditions. Piezoelectric materials can potentially operate over a wide temperature range. Single crystals, like LiNbO3, have a Curie temperature that is higher than 1000 deg C and the piezoelectric ceramics Bismuth Titanate higher than 600 deg C. A study of the feasibility of producing piezoelectric drills that can operate in the temperature range up to 500 deg C was conducted. The study includes the high temperature properties investigations of engineering materials and piezoelectric ceramics with different formulas and doping. The drilling performances of a prototype Ultrasonic/Sonic Drill/Corer (USDC) using high temperate piezoelectric ceramics and single crystal were tested at temperature up to 500 deg C. The detailed results of our study and a discussion of the future work on performance improvements are presented in this paper.

  15. Thermal characteristics investigation of high voltage grounded gate-LDMOS under ESD stress conditions

    Energy Technology Data Exchange (ETDEWEB)

    Sun Weifeng; Qian Qinsong; Wang Wen; Yi Yangbo, E-mail: swffrog@seu.edu.c [National ASIC System Engineering Research Center, Southeast University, Nanjing 210096 (China)

    2009-10-15

    The thermal characteristics of high voltage gg-LDMOS under ESD stress conditions are investigated in detail based on the Sentaurus process and device simulators. The total heat and lattice temperature distributions along the Si-SiO{sub 2} interface under different stress conditions are presented and the physical mechanisms are discussed in detail. The influence of structure parameters on peak lattice temperature is also discussed, which is useful for designers to optimize the parameters of LDMSO for better ESD performance.

  16. Thermal characteristics investigation of high voltage grounded gate-LDMOS under ESD stress conditions

    Institute of Scientific and Technical Information of China (English)

    Sun Weifeng; Qian Qinsong; Wang Wen; Yi Yangbo

    2009-01-01

    The thermal characteristics of high voltage gg-LDMOS under ESD stress conditions are investigated in detail based on the Sentaurus process and device simulators. The total heat and lattice temperature distributions along the Si-SiO_2 interface under different stress conditions are presented and the physical mechanisms are discussed in detail. The influence of structure parameters on peak lattice temperature is also discussed, which is useful for designers to optimize the parameters of LDMSO for better ESD performance.

  17. Volume Diffuse Dielectric Barrier Discharge Plasma Produced by Nanosecond High Voltage Pulse in Airflow

    Institute of Scientific and Technical Information of China (English)

    QI Haicheng; GAO Wei; FAN Zhihui; LIU Yidi; REN Chunsheng

    2016-01-01

    Volume diffuse dielectric barrier discharge (DBD) plasma is produced in subsonic airflow by nanosecond high-voltage pulse power supply with a plate-to-plate discharge cell at 6 mm air gap length.The discharge images,optical emission spectra (OES),the applied voltage and current waveforms of the discharge at the changed airflow rates are obtained.When airflow rate is increased,the transition of the discharge mode and the variations of discharge intensity,breakdown characteristics and the temperature of the discharge plasma are investigated.The results show that the discharge becomes more diffuse,discharge intensity is decreased accompanied by the increased breakdown voltage and time lag,and the temperature of the discharge plasma reduces when airflow of small vclocity is introduced into the discharge gap.These phenomena are because that the airflow changes the spatial distribution of the heat and the space charge in the discharge gap.

  18. Volume Diffuse Dielectric Barrier Discharge Plasma Produced by Nanosecond High Voltage Pulse in Airflow

    Science.gov (United States)

    Qi, Haicheng; Gao, Wei; Fan, Zhihui; Liu, Yidi; Ren, Chunsheng

    2016-05-01

    Volume diffuse dielectric barrier discharge (DBD) plasma is produced in subsonic airflow by nanosecond high-voltage pulse power supply with a plate-to-plate discharge cell at 6 mm air gap length. The discharge images, optical emission spectra (OES), the applied voltage and current waveforms of the discharge at the changed airflow rates are obtained. When airflow rate is increased, the transition of the discharge mode and the variations of discharge intensity, breakdown characteristics and the temperature of the discharge plasma are investigated. The results show that the discharge becomes more diffuse, discharge intensity is decreased accompanied by the increased breakdown voltage and time lag, and the temperature of the discharge plasma reduces when airflow of small velocity is introduced into the discharge gap. These phenomena are because that the airflow changes the spatial distribution of the heat and the space charge in the discharge gap. supported by National Natural Science Foundation of China (No. 51437002)

  19. An atmospheric pressure plasma source driven by a train of monopolar high voltage pulses superimposed to a dc voltage

    OpenAIRE

    Stoican, O.S.

    2011-01-01

    Abstract An atmospheric pressure plasma source supplied by an electrical circuit consisting of two voltage sources in parallel connection is reported. One of them is a low-power self-oscillating flyback converter which produces negative voltage pulses with an amplitude of several kilovolts. The high voltage pulses are necessary to ignite an electrical discharge between the electrodes at atmospheric pressure. An additional dc source delivering several hundreds of volts at a few hund...

  20. Strangeness at high temperatures

    CERN Document Server

    Schmidt, Christian

    2013-01-01

    We use up to fourth order cumulants of net strangeness fluctuations and their correlations with net baryon number fluctuations to extract information on the strange meson and baryon contribution to the low temperature hadron resonance gas, the dissolution of strange hadronic states in the crossover region of the QCD transition and the quasi-particle nature of strange quark contributions to the high temperature quark-gluon plasma phase.

  1. Silicon solar cells with high open-circuit voltage

    Science.gov (United States)

    Minnucci, J. A.; Matthei, K. W.; Kirkpatrick, A. R.; Mccrosky, A.

    1980-01-01

    Open-circuit voltages as high as 0.645 V (AM0-25 C) have been obtained by a new process developed for low-resistivity silicon. The method utilizes high-dose phosphorus implantation, followed by furnace annealing and simultaneous oxide growth to form high-efficiency, shallow junctions. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient AR coating. Boron doped silicon with resistivities from 0.1 to 0.3 ohm-cm has been processed according to this sequence; results show highest open-circuit voltage is attained with 0.1-ohm-cm starting material. The effects of bandgap narrowing, caused by high doping concentrations in the junction, were also investigated by implanting phosphorus over a wide range of dose levels.

  2. 30 CFR 75.705-2 - Repairs to energized surface high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repairs to energized surface high-voltage lines... Repairs to energized surface high-voltage lines. An energized high-voltage surface line may be repaired... on power circuits with a phase-to-phase nominal voltage no greater than 15,000 volts; (3)...

  3. 30 CFR 77.704-2 - Repairs to energized high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repairs to energized high-voltage lines. 77.704... UNDERGROUND COAL MINES Grounding § 77.704-2 Repairs to energized high-voltage lines. An energized high-voltage... repairs will be performed on power circuits with a phase-to-phase nominal voltage no greater than...

  4. A novel high-voltage device structure with an N+ ring in substrate and the breakdown voltage model

    Institute of Scientific and Technical Information of China (English)

    Li Qi; Zhu Jinluan; Wang Weidong; Yue Hongwei; Jin Liangnian

    2011-01-01

    A novel high-voltage device structure with a floating heavily doped N+ ring embedded in the substrate is reported,which is called FR LDMOS.When the N+ ring is introduced in the device substrate,the electric field peak of the main junction is reduced due to the transfer of the voltage from the main junction to the N+ ring junction,and the vertical breakdown characteristic is improved significantly.Based on the Poisson equation of cylindrical coordinates,a breakdown voltage model is developed.The numerical results indicate that the breakdown voltage of the proposed device is increased by 56% in comparison to conventional LDMOS.

  5. An ultra-low noise, high-voltage piezo driver

    CERN Document Server

    Pisenti, N C; Reschovsky, B J; Barker, D S; Campbell, G K

    2016-01-01

    We present an ultra-low noise, high-voltage driver suited for use with piezoelectric actuators and other low-current applications. The architecture uses a flyback switching regulator to generate up to 250V in our current design, with an output of 1 kV or more possible with small modifications. A high slew-rate op-amp suppresses the residual switching noise, yielding a total RMS noise of $\\approx 100\\mu$V (1 Hz--100 kHz). A low-voltage ($\\pm 10$V), high bandwidth signal can be summed with unity gain directly onto the output, making the driver well-suited for closed-loop feedback applications. Digital control enables both repeatable setpoints and sophisticated control logic, and the circuit consumes less than 150mA at $\\pm 15$V.

  6. High temperature storage loop :

    Energy Technology Data Exchange (ETDEWEB)

    Gill, David Dennis; Kolb, William J.

    2013-07-01

    A three year plan for thermal energy storage (TES) research was created at Sandia National Laboratories in the spring of 2012. This plan included a strategic goal of providing test capability for Sandia and for the nation in which to evaluate high temperature storage (>650ÀC) technology. The plan was to scope, design, and build a flow loop that would be compatible with a multitude of high temperature heat transfer/storage fluids. The High Temperature Storage Loop (HTSL) would be reconfigurable so that it was useful for not only storage testing, but also for high temperature receiver testing and high efficiency power cycle testing as well. In that way, HTSL was part of a much larger strategy for Sandia to provide a research and testing platform that would be integral for the evaluation of individual technologies funded under the SunShot program. DOEs SunShot program seeks to reduce the price of solar technologies to 6/kWhr to be cost competitive with carbon-based fuels. The HTSL project sought to provide evaluation capability for these SunShot supported technologies. This report includes the scoping, design, and budgetary costing aspects of this effort

  7. High temperature storage loop :

    Energy Technology Data Exchange (ETDEWEB)

    Gill, David Dennis; Kolb, William J.

    2013-07-01

    A three year plan for thermal energy storage (TES) research was created at Sandia National Laboratories in the spring of 2012. This plan included a strategic goal of providing test capability for Sandia and for the nation in which to evaluate high temperature storage (>650ÀC) technology. The plan was to scope, design, and build a flow loop that would be compatible with a multitude of high temperature heat transfer/storage fluids. The High Temperature Storage Loop (HTSL) would be reconfigurable so that it was useful for not only storage testing, but also for high temperature receiver testing and high efficiency power cycle testing as well. In that way, HTSL was part of a much larger strategy for Sandia to provide a research and testing platform that would be integral for the evaluation of individual technologies funded under the SunShot program. DOEs SunShot program seeks to reduce the price of solar technologies to 6/kWhr to be cost competitive with carbon-based fuels. The HTSL project sought to provide evaluation capability for these SunShot supported technologies. This report includes the scoping, design, and budgetary costing aspects of this effort

  8. High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    Science.gov (United States)

    Shimer, Daniel W.; Lange, Arnold C.

    1995-01-01

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  9. High Output Voltage Based Multiphase Step-Up DC-DC Converter Topology with Voltage Doubler Rectifiers

    Directory of Open Access Journals (Sweden)

    Liao Xiaozhong

    2013-02-01

    Full Text Available High Output Voltage Based Multiphase Step-Up DC-DC Converter topology with voltage doubler rectifiers is presented in this paper. High output voltage is obtained due to the series combination of voltage doubler rectifiers on the secondary side of high frequency transformers. This topology is useful in the application where the output voltage is greater than the input. The two loop control strategy has been developed in order to analyze the stable and effective working of the converter topology. Therefore the working mode analysis of the converter topology has been described in detail. The multiphase step-up DC-DC converter topology is first simulated on MATLAB and then a prototype has been designed in order to verify the simulation and experimental results. Finally the simulation and experimental results are found to be satisfactory.

  10. Desulfurization at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Panula-Nikkilae, E.; Kurkela, E.; Mojtahedi, W.

    1987-01-01

    Two high-temperature desulfurization methods, furnace injection and gasification-desulfurization are presented. In furnace injection, the efficiency of desulfurization is 50-60%, but this method is applied in energy production plants, where flue gas desulfurization cannot be used. Ca-based sorbents are used as desulfurization material. Factors affecting desulfurization and the effect of injection on the boiler and ash handling are discussed. In energy production based on gasification, very low sulfur emissions can be achieved by conventional low-temperature cleanup. However, high-temperature gas cleaning leads to higher efficiency and can be applied to smaller size classes. Ca-, Fe-, or Zn-based sorbents or mixed metals can be used for desulfurization. Most of the methods under development are based on the use of regenerative sorbents in a cleanup reactor located outside the gasifier. So far, only calcium compounds have been used for desulfurization inside the gasifier.

  11. High-voltage electrode optimization towards uniform surfacetreatment by a pulsed volume discharge

    OpenAIRE

    Ponomarev, A. V.; Pedos, M. S.; Scherbinin, S. V.; Mamontov, Y. I.; Ponomarev, Sergey Viktorovich

    2015-01-01

    In this study, the shape and material of the high-voltage electrode of an atmospheric pressure plasma generation system were optimised. The research was performed with the goal of achieving maximum uniformity of plasma treatment of the surface of the low-voltage electrode with a diameter of 100 mm. In order to generate low-temperature plasma with the volume of roughly 1 cubic decimetre, a pulsed volume discharge was used initiated with a corona discharge. The uniformity of the plasma in the r...

  12. [Design of a high-voltage insulation testing system of X-ray high frequency generators].

    Science.gov (United States)

    Huang, Yong; Mo, Guo-Ming; Wang, Yan; Wang, Hong-Zhi; Yu, Jie-Ying; Dai, Shu-Guang

    2007-09-01

    In this paper, we analyze the transformer of X-ray high-voltage high-frequency generators and, have designed and implemented a high-voltage insulation testing system for its oil tank using full-bridge series resonant soft switching PFM DC-DC converter.

  13. Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

    Institute of Scientific and Technical Information of China (English)

    Ni Jian; Zhang Jian-Jun; Cao Yu; Wang Xian-Bao; Li Chao; Chen Xin-Liang; Geng Xin-Hua; Zhao Ying

    2011-01-01

    This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125 ℃.We find that poor quality p-a-SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely.A significant improvement in open circuit voltage has been obtained by using high quality p-a-SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions.

  14. A Review of High Voltage Drive Amplifiers for Capacitive Actuators

    DEFF Research Database (Denmark)

    Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.

    2012-01-01

    This paper gives an overview of the high voltage amplifiers, which are used to drive capacitive actuators. The amplifiers for both piezoelectric and DEAP (dielectric electroactive polymer) actuator are discussed. The suitable topologies for driving capacitive actuators are illustrated in detail, ......, including linear as well as switched mode amplifiers. In the past much attention has been paid on the driver for piezoelectric actuator. As DEAP is a type of new material, there is not much literature reference for it.......This paper gives an overview of the high voltage amplifiers, which are used to drive capacitive actuators. The amplifiers for both piezoelectric and DEAP (dielectric electroactive polymer) actuator are discussed. The suitable topologies for driving capacitive actuators are illustrated in detail...

  15. High-voltage electrode optimization towards uniform surface treatment by a pulsed volume discharge

    Science.gov (United States)

    Ponomarev, A. V.; Pedos, M. S.; Scherbinin, S. V.; Mamontov, Y. I.; Ponomarev, S. V.

    2015-11-01

    In this study, the shape and material of the high-voltage electrode of an atmospheric pressure plasma generation system were optimised. The research was performed with the goal of achieving maximum uniformity of plasma treatment of the surface of the low-voltage electrode with a diameter of 100 mm. In order to generate low-temperature plasma with the volume of roughly 1 cubic decimetre, a pulsed volume discharge was used initiated with a corona discharge. The uniformity of the plasma in the region of the low-voltage electrode was assessed using a system for measuring the distribution of discharge current density. The system's low-voltage electrode - collector - was a disc of 100 mm in diameter, the conducting surface of which was divided into 64 radially located segments of equal surface area. The current at each segment was registered by a high-speed measuring system controlled by an ARM™-based 32-bit microcontroller. To facilitate the interpretation of results obtained, a computer program was developed to visualise the results. The program provides a 3D image of the current density distribution on the surface of the low-voltage electrode. Based on the results obtained an optimum shape for a high-voltage electrode was determined. Uniformity of the distribution of discharge current density in relation to distance between electrodes was studied. It was proven that the level of non-uniformity of current density distribution depends on the size of the gap between electrodes. Experiments indicated that it is advantageous to use graphite felt VGN-6 (Russian abbreviation) as the material of the high-voltage electrode's emitting surface.

  16. THE EFFECT OF LIGHTNING ON HIGH VOLTAGE ELECTRICAL SUBSTATIONS’ LOW VOLTAGE SYSTEMS

    Directory of Open Access Journals (Sweden)

    M. I. Fursanov

    2016-01-01

    Full Text Available The article presents the results of studies of the effects of lightning on low voltage systems of high voltage electrical substations with outdoor switchgears of 110 kV. The topicality of research is associated with a wide spreading of such substations as well as with a high reliability requirements of their work and, also, with their widespread distribution and high probability of lightning strikes to the substation or around it. The highest probable and the most dangerous effects of lightning on low voltage systems of a substation are determined on the basis of critical review and special literature analysis and, also, of systematization of practical information that had been collected during the survey of operating substations. Adequate physical models were developed for the list of hazardous effects based on physical processes of lightning. A model of each effect was studied on the basis of the sensitivity theory. The accuracy and adequacy of the models were verified by means of comparison of calculation results for the models under investigation with the results of calculations fulfilled in accordance with specialized programs, as well as from practical or theoretical data obtained by other authors. The factors that had been included in the models were studied and were defined in accordance with their nature (natural or artificial, the range of possible values in a substation was determined; the coefficients of elasticity were calculated. The obtained results enable to ascertain the contribution of the factor in the effect of lightning and the ability to control the factor. The relationship between the factors and the effects of lightning are shown as graphs. For practical application the information, obtained as the result of the research, was organized in the form of checklists that can be applied when collecting baseline information to develop the lightning protection of the substation, to examine the existing lightning protection, to

  17. Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

    Science.gov (United States)

    Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

    2011-01-01

    A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

  18. High voltage generator circuit with low power and high efficiency applied in EEPROM

    Institute of Scientific and Technical Information of China (English)

    Liu Yan; Zhang Shilin; Zhao Yiqiang

    2012-01-01

    This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory (EEPROM).The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique.The high efficiency is dependent on the zero threshold voltage (Vth) MOSFET and the charge transfer switch (CTS) charge pump.The proposed high voltage generator circuit has been implemented in a 0.35μm EEPROM CMOS process.Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48 μW and a higher pumping efficiency (83.3%) than previously reported circuits.This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation.

  19. High voltage systems (tube-type microwave)/low voltage system (solid-state microwave) power distribution

    Science.gov (United States)

    Nussberger, A. A.; Woodcock, G. R.

    1980-01-01

    SPS satellite power distribution systems are described. The reference Satellite Power System (SPS) concept utilizes high-voltage klystrons to convert the onboard satellite power from dc to RF for transmission to the ground receiving station. The solar array generates this required high voltage and the power is delivered to the klystrons through a power distribution subsystem. An array switching of solar cell submodules is used to maintain bus voltage regulation. Individual klystron dc voltage conversion is performed by centralized converters. The on-board data processing system performs the necessary switching of submodules to maintain voltage regulation. Electrical power output from the solar panels is fed via switch gears into feeder buses and then into main distribution buses to the antenna. Power also is distributed to batteries so that critical functions can be provided through solar eclipses.

  20. Health problems from radiation of high-voltage facilities

    Directory of Open Access Journals (Sweden)

    Hossein Ali Yousefi Rizi

    2013-01-01

    Full Text Available Aims: The aim of this study was to survey the health problems caused by exposure to high-voltage facility radiation. Materials and Methods: Sampling included workers exposed to electromagnetic fields at high-voltage facilities. The strength of the electric and magnetic fields was determined by a field meter. A questionnaire was used to evaluate the prevalence of subjective and psychological symptoms. Statistical descriptive used and data analyzed by a Student′s t-tests. Results: This study indicates that increased symptoms among the exposed workers including depression, anxiety, hostility, paranoia, inter-sensitivity, and obsession-compulsion. Some of the self-reported symptoms were, headache (53.5%, fatigue (35.6%, difficulties in concentration (32.5%, vertigo/dizziness (30.4%, attention disorders (28.8%, nervousness (28.1%, and palpitations (14.7%. A significant relationship was observed between the exposure to the electromagnetic field and psychological symptoms (P < 0.05. Conclusion: Radiation of high-voltage facilities probably increased the risk of mental disorders and intensified them in susceptible workers, especially depression. This finding confirmed the results obtained in provocative studies that indicated an increase in the risk of psychological symptoms, which was put forth by several investigators Observation of occupational health and other control measures play an important role in decreasing the symptoms.

  1. Design and Implementation of a High-Voltage Generator with Output Voltage Control for Vehicle ER Shock-Absorber Applications

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2013-01-01

    Full Text Available A self-oscillating high-voltage generator is proposed to supply voltage for a suspension system in order to control the damping force of an electrorheological (ER fluid shock absorber. By controlling the output voltage level of the generator, the damping force in the ER fluid shock absorber can be adjusted immediately. The shock absorber is part of the suspension system. The high-voltage generator drives a power transistor based on self-excited oscillation, which converts dc to ac. A high-frequency transformer with high turns ratio is used to increase the voltage. In addition, the system uses the car battery as dc power supply. By regulating the duty cycle of the main switch in the buck converter, the output voltage of the buck converter can be linearly adjusted so as to obtain a specific high voltage for ER. The driving system is self-excited; that is, no additional external driving circuit is required. Thus, it reduces cost and simplifies system structure. A prototype version of the actual product is studied to measure and evaluate the key waveforms. The feasibility of the proposed system is verified based on experimental results.

  2. Influence of temperature and voltage on electrochemical reduction of graphene oxide

    Indian Academy of Sciences (India)

    Xiuqiang Li; Dong Zhang; Peiying Zhu; Chao Yang

    2014-05-01

    In this paper, the influence of temperature and voltage on direct electrochemical reduction were discussed in detail. Reduced graphene oxide is characterized with X-ray diffraction (XRD), fourier transform infrared spectroscopy (FT–IR) and field emission scanning electron microscopy (FE–SEM). It is found that the reduction degree of graphene oxide (GO) decreases gradually with the increase of applied temperature. The optimal applied temperature found in our experiment is 20 °C; Meanwhile, as the applied voltage increases from 0.1 to 12.5 V, the reduction degree of graphene oxide increases gradually. However, above 2.5 V, increasing voltage has little effect on the reduction degree of graphene oxide.

  3. High Voltage Tests in the LUX-ZEPLIN System Test

    Science.gov (United States)

    Whitis, Thomas; Lux-Zeplin Collaboration

    2016-03-01

    The LUX-ZEPLIN (LZ) project is a dark matter direct detection experiment using liquid xenon. The detector is a time projection chamber (TPC) requiring the establishment of a large electric field inside of the detector in order to drift ionization electrons. Historically, many xenon TPC designs have been unable to reach their design fields due to light production and breakdown. The LZ System Test is scaled so that with a cathode voltage of -50 kV, it will have the fields that will be seen in the LZ detector at -100 kV. It will use a fully instrumented but scaled-down version of the LZ TPC design with a vessel set and gas system designed for quick turnaround, allowing for iterative modifications to the TPC prototype and instrumentation. This talk will present results from the high voltage tests performed during the first runs of the LZ System Test.

  4. High voltage magnetic pulse generation using capacitor discharge technique

    Directory of Open Access Journals (Sweden)

    M. Rezal

    2014-12-01

    Full Text Available A high voltage magnetic pulse is designed by applying an electrical pulse to the coil. Capacitor banks are developed to generate the pulse current. Switching circuit consisting of Double Pole Double Throw (DPDT switches, thyristor, and triggering circuit is developed and tested. The coil current is measured using a Hall-effect current sensor. The magnetic pulse generated is measured and tabulated in a graph. Simulation using Finite Element Method Magnetics (FEMM is done to compare the results obtained between experiment and simulation. Results show that increasing the capacitance of the capacitor bank will increase the output voltage. This technology can be applied to areas such as medical equipment, measurement instrument, and military equipment.

  5. High Voltage Coaxial Vacuum Gap Breakdown for Pulsed Power Liners

    Science.gov (United States)

    Cordaro, Samuel; Bott-Suzuki, Simon; Caballero Bendixsen, Luis Sebastian

    2015-11-01

    The dynamics of Magnetized Liner Inertial Fusion (MagLIF)1, are presently under detailed study at Sandia National Laboratories. Alongside this, a comprehensive analysis of the influence of the specific liner design geometry in the MagLIF system on liner initiation is underway in the academic community. Recent work at UC San Diego utilizes a high voltage pulsed system (25kV, 150ns) to analyze the vacuum breakdown stage of liner implosion. Such experimental analyses are geared towards determining how the azimuthal symmetry of coaxial gap breakdown affect plasma initiation within the liner. The final aim of the experimental analysis is to assess to what scale symmetry remains important at high (MV) voltages. An analysis of the above will utilize plasma self-emission via optical MCP, current measurements, voltage measurements near the gap, exact location of breakdown via 2D b-dot probe triangulation, as well as measuring the evolution of the B-field along the length of the liner via b-dot array. Results will be discussed along with analytical calculations of breakdown mechanisms

  6. Modeling of High-voltage Breakdown in Helium

    Science.gov (United States)

    Xu, Liang; Khrabrov, Alexander; Kaganovich, Igor; Sommerer, Timothy

    2016-09-01

    We investigate the breakdown in extremely high reduced electric fields (E/N) between parallel-plate electrodes in helium. The left branch of the Paschen curve in the voltage range of 20-350kV and inter-electrode gap range of 0.5-3.5cm is studied analytically and with Monte-Carlo/PIC simulations. The model incorporates electron, ion, and fast neutral species whose energy-dependent anisotropic scattering, as well as backscattering at the electrodes, is carefully taken into account. Our model demonstrates that (1) anisotropic scattering is indispensable for producing reliable results at such high voltage and (2) due to the heavy species backscattered at cathode, breakdown can occur even without electron- and ion-induced ionization of the background gas. Fast atoms dominate in the breakdown process more and more as the applied voltage is increased, due to their increasing ionization cross-section and to the copious flux of energetic fast atoms generated in charge-exchange collisions.

  7. Studies on temperature dependence of current-voltage characteristics of glancing angle deposited indium oxide nanowire on silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Mondal, Aniruddha, E-mail: aniruddhamo@gmail.com; Das, Amit Kumar [Department of Physics, National Institute of technology Durgapur, Mahatma Gandhi Rd, A-Zone, Durgapur, West Bengal, India-713209 (India); Dey, Anubhab [Indian Institute of Science Education and Research, Thiruvananthapuram, Computer Science Building, College of Engineering Trivandrum Campus, Thiruvananthapuram, Kerala 695016 (India); Choudhuri, Bijit [Department of Electronics & Communication Engineering, National Institute of Technology Agartala, Jirania, Tripura, India - 799046 (India)

    2016-05-06

    The 1D perpendicular In{sub 2-x}O{sub 3-y} nanostructure arrays have been synthesized by using glancing angle deposition (GLAD) technique. A low deposition rate of 0.5 A°/S produced highly porous structure. The current - voltage characteristics for the In{sub 2-x}O{sub 3-y}nanocolumnar array based were measured through a gold Schottky contact at different temperatures. The temperature dependent ideality factor was calculated from the observed current – voltage characteristics. The ideality factor was found to vary from 4.19 to 2.75 with a variation in temperature from 313 K to 473 K.

  8. Experimental validation of a high voltage pulse measurement method.

    Energy Technology Data Exchange (ETDEWEB)

    Cular, Stefan; Patel, Nishant Bhupendra; Branch, Darren W.

    2013-09-01

    This report describes X-cut lithium niobates (LiNbO3) utilization for voltage sensing by monitoring the acoustic wave propagation changes through LiNbO3 resulting from applied voltage. Direct current (DC), alternating current (AC) and pulsed voltage signals were applied to the crystal. Voltage induced shift in acoustic wave propagation time scaled quadratically for DC and AC voltages and linearly for pulsed voltages. The measured values ranged from 10 - 273 ps and 189 ps 2 ns for DC and non-DC voltages, respectively. Data suggests LiNbO3 has a frequency sensitive response to voltage. If voltage source error is eliminated through physical modeling from the uncertainty budget, the sensors U95 estimated combined uncertainty could decrease to ~0.025% for DC, AC, and pulsed voltage measurements.

  9. Electronically Tunable High Input Impedance Voltage-Mode Multifunction Filter

    Science.gov (United States)

    Chen, Hua-Pin; Yang, Wan-Shing

    A novel electronically tunable high input impedance voltage-mode multifunction filter with single inputs and three outputs employing two single-output-operational transconductance amplifiers, one differential difference current conveyor and two capacitors is proposed. The presented filter can be realized the highpass, bandpass and lowpass functions, simultaneously. The input of the filter exhibits high input impedance so that the synthesized filter can be cascaded without additional buffers. The circuit needs no any external resistors and employs two grounded capacitors, which is suitable for integrated circuit implementation.

  10. A magnesium–sodium hybrid battery with high operating voltage

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Hui; Li, Yifei; Liang, Yanliang; Li, Guosheng; Sun, Cheng-Jun; Ren, Yang; Lu, Yuhao; Yao, Yan

    2016-06-10

    We report a high performance magnesium-sodium hybrid battery utilizing a magnesium-sodium dual-salt electrolyte, a magnesium anode, and a Berlin green cathode. The cell delivers an average discharge voltage of 2.2 V and a reversible capacity of 143 mAh g-1. We also demonstrate the cell with an energy density of 135 Wh kg-1 and a high power density of up to 1.67 kW kg-1.

  11. Impact of Solar Array Designs on High Voltage Operations

    Science.gov (United States)

    Brandhorst, Henry W., Jr.; Ferguson, Dale; Piszczor, Mike; ONeill, Mark

    2006-01-01

    As power levels of advanced spacecraft climb above 25 kW, higher solar array operating voltages become attractive. Even in today s satellites, operating spacecraft buses at 100 V and above has led to arcing in GEO communications satellites, so the issue of spacecraft charging and solar array arcing remains a design problem. In addition, micrometeoroid impacts on all of these arrays can also lead to arcing if the spacecraft is at an elevated potential. For example, tests on space station hardware disclosed arcing at 75V on anodized A1 structures that were struck with hypervelocity particles in Low Earth Orbit (LEO) plasmas. Thus an understanding of these effects is necessary to design reliable high voltage solar arrays of the future, especially in light of the Vision for Space Exploration of NASA. In the future, large GEO communication satellites, lunar bases, solar electric propulsion missions, high power communication systems around Mars can lead to power levels well above 100 kW. As noted above, it will be essential to increase operating voltages of the solar arrays well above 80 V to keep the mass of cabling needed to carry the high currents to an acceptable level. Thus, the purpose of this paper is to discuss various solar array approaches, to discuss the results of testing them at high voltages, in the presence of simulated space plasma and under hypervelocity impact. Three different types of arrays will be considered. One will be a planar array using thin film cells, the second will use planar single or multijunction cells and the last will use the Stretched Lens Array (SLA - 8-fold concentration). Each of these has different approaches for protection from the space environment. The thin film cell based arrays have minimal covering due to their inherent radiation tolerance, conventional GaAs and multijunction cells have the traditional cerium-doped microsheet glasses (of appropriate thickness) that are usually attached with Dow Corning DC 93-500 silicone

  12. New perspectives in vacuum high voltage insulation. II. Gas desorption

    CERN Document Server

    Diamond, W T

    1998-01-01

    An examination has been made of gas desorption from unbaked electrodes of copper, niobium, aluminum, and titanium subjected to high voltage in vacuum. It has been shown that the gas is composed of water vapor, carbon monoxide, and carbon dioxide, the usual components of vacuum outgassing, plus an increased yield of hydrogen and light hydrocarbons. The gas desorption was driven by anode conditioning as the voltage was increased between the electrodes. The gas is often desorbed as microdischarges-pulses of a few to hundreds of microseconds-and less frequently in a more continuous manner without the obvious pulsed structure characteristic of microdischarge activity. The quantity of gas released was equivalent to many monolayers and consisted mostly of neutral molecules with an ionic component of a few percent. A very significant observation was that the gas desorption was more dependent on the total voltage between the electrodes than on the electric field. It was not triggered by field-emitted electrons but oft...

  13. Design of Plasma Generator Driven by High-frequency High-voltage Power Supply

    Directory of Open Access Journals (Sweden)

    C. Yong-Nong

    2013-03-01

    Full Text Available In this research, a high-frequency high-voltage power supply designed for plasma generator is presented. The powersupply mainly consists of a series resonant converter with a high-frequency high-voltage boost transformer. Due to theindispensable high-voltage inheritance in the operation of plasma generator, the analysis of transformer needconsidering not only winding resistance, leakage inductance, magnetizing inductance, and core-loss resistance, butalso parasitic capacitance resulted from the insulation wrappings on the high-voltage side. This research exhibits asimple approach to measuring equivalent circuit parameters of the high-frequency, high-voltage transformer with straycapacitance being introduced into the conventional modeling. The proposed modeling scheme provides not only aprecise measurement procedure but also effective design information for series-load resonant converter. The plasmadischarging plate is designed as part of the electric circuit in the series load-resonant converter and the circuit modelof the plasma discharging plate is also conducted as well. Thus, the overall model of the high-voltage plasmagenerator is built and the designing procedures for appropriate selections of the corresponding resonant-circuitparameters can be established. Finally, a high-voltage plasma generator with 220V, 60Hz, and 1kW input, along witha 22 kHz and over 8kV output, is realized and implemented.

  14. 16nm planar process CMOS SRAM cell design: Analysis of Operating Voltage and Temperature Effect

    Directory of Open Access Journals (Sweden)

    Rohit Sharma

    2013-09-01

    Full Text Available Purpose: CMOS devices are scaling down to nano ranges resulting in increased process variations and short channel effects which not only affect the reliability of the device but also performance expectations. The SRAM design uses the smallest transistors possible and is also susceptible to reliability issues and process variations, making it an ideal benchmark circuit to compare the two technologies [1]. Low power static-random access memories (SRAM have become a critical component in modern VLSI systems. They occupy a large portion of area and accounts for a major component of power consumption in today’s VLSI circuits. In this paper we intend to analyse the performance of a traditional 6T SRAM cell of 16nm Complementary Metal Oxide Semiconductor (CMOS technology with change in Operating Voltage and Temperature. Aim: The aim of the paper is to study the effect of the SNM dependencies on the operating voltage and temperatureApproach: Conventional 6T SRAM are designed using predictive technology model developed by Arizona State University [2] of 16nm planar Low Power CMOS and variation of SNM with operating voltage and temperature are simulated and studied using hspice.Findings: Variations in the operating voltages and temperature strongly impact the stability of an SRAM cell at 16nm. Comparative study is done for predictive 16nm based conventional 6T SRAM cell by varying operating voltage and temperature. A methodology to select operating voltage is suggested which can be used in an early stage of a design cycle to optimise stability margins in nanometer regime

  15. Pickup impact on high-voltage multifinger LDMOS-SCR with low trigger voltage and high failure current

    Science.gov (United States)

    Yang, Liu; Jin, Xiangliang; Wang, Yang; Zhou, Acheng

    2015-12-01

    The impact of inserting P+ pickup on high-voltage multi-finger laterally diffused metal-oxide-semiconductor-silicon-controlled rectifier (LDMOS-SCR) has been studied in this article. Four-finger LDMOS-SCR structures with finger length of 50 μm using 0.5 μm 18 V complementarily diffused metal oxide semiconductor (CDMOS) process were fabricated and tested. Theoretical analysis is carried out to make detailed comparisons between LDMOS-SCR with and without P+ pickup. It verifies that the multi-finger LDMOS-SCR with P+ pickup has greater electrostatic discharge (ESD) robustness and effectiveness. Furthermore, transmission line pulse (TLP) test has been done and the results show that the trigger voltage (Vt1) of the LDMOS-SCR with P+ pickup remarkably decreases from 46.19 to 35.39 V and the second breakdown current (It2) effectively increases from 8.13 to 10.08 A.

  16. High temperature superconducting compounds

    Science.gov (United States)

    Goldman, Allen M.

    1992-11-01

    The major accomplishment of this grant has been to develop techniques for the in situ preparation of high-Tc superconducting films involving the use of ozone-assisted molecular beam epitaxy. The techniques are generalizable to the growth of trilayer and multilayer structures. Films of both the DyBa2Cu3O(7-x) and YBa2Cu3O(7-x) compounds as well as the La(2-x)Sr(x)CuO4 compound have been grown on the usual substrates, SrTiO3, YSZ, MgO, and LaAlO3, as well as on Si substrates without any buffer layer. A bolometer has been fabricated on a thermally isolated SiN substrate coated with YSZ, an effort carried out in collaboration with Honeywell Inc. The deposition process facilitates the fabrication of very thin and transparent films creating new opportunities for the study of superconductor-insulator transitions and the investigation of photo-doping with carriers of high temperature superconductors. In addition to a thin film technology, a patterning technology has been developed. Trilayer structures have been developed for FET devices and tunneling junctions. Other work includes the measurement of the magnetic properties of bulk single crystal high temperature superconductors, and in collaboration with Argonne National Laboratory, measurement of electric transport properties of T1-based high-Tc films.

  17. High Temperature Piezoelectric Drill

    Science.gov (United States)

    Bao, Xiaoqi; Bar-Cohen, Yoseph; Sherrit, Stewart; Badescu, Mircea; Shrout, Tom

    2012-01-01

    Venus is one of the planets in the solar systems that are considered for potential future exploration missions. It has extreme environment where the average temperature is 460 deg C and its ambient pressure is about 90 atm. Since the existing actuation technology cannot maintain functionality under the harsh conditions of Venus, it is a challenge to perform sampling and other tasks that require the use of moving parts. Specifically, the currently available electromagnetic actuators are limited in their ability to produce sufficiently high stroke, torque, or force. In contrast, advances in developing electro-mechanical materials (such as piezoelectric and electrostrictive) have enabled potential actuation capabilities that can be used to support such missions. Taking advantage of these materials, we developed a piezoelectric actuated drill that operates at the temperature range up to 500 deg C and the mechanism is based on the Ultrasonic/Sonic Drill/Corer (USDC) configuration. The detailed results of our study are presented in this paper

  18. High temperature materials and mechanisms

    CERN Document Server

    2014-01-01

    The use of high-temperature materials in current and future applications, including silicone materials for handling hot foods and metal alloys for developing high-speed aircraft and spacecraft systems, has generated a growing interest in high-temperature technologies. High Temperature Materials and Mechanisms explores a broad range of issues related to high-temperature materials and mechanisms that operate in harsh conditions. While some applications involve the use of materials at high temperatures, others require materials processed at high temperatures for use at room temperature. High-temperature materials must also be resistant to related causes of damage, such as oxidation and corrosion, which are accelerated with increased temperatures. This book examines high-temperature materials and mechanisms from many angles. It covers the topics of processes, materials characterization methods, and the nondestructive evaluation and health monitoring of high-temperature materials and structures. It describes the ...

  19. Tests of industrial ethylene-propylene rubber high voltage cable for cryogenic use

    CERN Document Server

    Balhan, B; Goddard, B; Muratori, G; Otwinowski, S; Rieubland, Jean Michel; Wang, H; CERN. Geneva. SPS and LEP Division

    1999-01-01

    At the beginning of 1999 UCLA has received a prototype High Voltage Cryogenic Cable supplied fee of charge by Pirelli. The cable is intended for more than ten years of service at 100 kV D.C. and liquid argon temperature. Thecable uses an all welded construction, whichi is axially tight and free of ionizable voids. The cable was submitted to a number of mechanical and electrical tests as described below.

  20. CMOS temperature sensor using a resistively degenerated common-source amplifier biased by an adjustable proportional-to-absolute-temperature voltage

    Science.gov (United States)

    Wang, Ruey-Lue; Fu, Chien-Cheng; Yu, Chi; Hao, Yi-Fan; Shi, Jian-Liang; Lin, Chen-Fu; Liao, Hsin-Hao; Tsai, Hann-Huei; Juang, Ying-Zong

    2014-01-01

    A high-linearity CMOS temperature sensor with pulse output is presented. The temperature core is a resistively degenerated common-source amplifier which gate is biased by a proportional-to-absolute-temperature (PTAT) voltage generator. The source resistor is made of polysilicon which resistance has a PTAT characteristic. The current flowing through the resistor exhibits a PTAT characteristic with high linearity of 99.99% at least for a temperature range from 0 to 125 °C. The PTAT voltage generator can be adjusted by a bias voltage Vb and hence the PTAT current can also be adjusted by the Vb. The PTAT current is mirrored to an added current controlled oscillator which output pulse frequencies also exhibit a PTAT characteristic. For the chip using the 0.35 µm process, the plots of measured pulse frequencies against temperature exhibit the sensitivity of 2.30 to 2.24 kHz/°C with linearity of more than 99.99% at the Vb of 1 to 1.2 V.

  1. A novel high voltage start up circuit for an integrated switched mode power supply

    Energy Technology Data Exchange (ETDEWEB)

    Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

  2. SEMICONDUCTOR DEVICES: A novel high voltage start up circuit for an integrated switched mode power supply

    Science.gov (United States)

    Hao, Hu; Xingbi, Chen

    2010-09-01

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.

  3. High voltage, low inductance hydrogen thyratron study program

    Science.gov (United States)

    Caristi, R. F.; Turnquist, D.

    1981-01-01

    The second phase of a multi-phase program of research and development to gain the information necessary to fabricate a high voltage, low inductance hydrogen thyratron switch has now been completed. The thyratron is to be capable of switching tens of kiloamperes within tens of nanoseconds at voltage levels as high as 250 kV. To achieve low inductance, the thyratron is operated within a close-fitting coaxial current return. Both the tube and the return are made physically short, and the tube is designed such that the discharge is constrained to flow principally at the outer reaches of the device. A technique has been developed for modelling various types of box grids and then using computer-generated field plots to aid in the specifics of grid design. This model has been used to generate a comprehensive set of theoretical relations that are useful to determine the anode dissipation to be expected. Experimental results are described and discussed. Included are the ceramic test results, holdoff vs. time on charge and gas pressure, stage voltage addition, operation at high pulse repetition rates, current rise time as a function of gas pressure, and the triggering characteristics of multi-stage, box-grid tubes. Finally, the design of an intermediate experimental tube is discussed at length. This tube is expected to have an inductance less than 50 nH and to operate at 150 kV. Its design is based on both the theoretical and experimental results obtained during this phase of the research program. The overall conclusion is that a hydrogen thyratron capable of achieving the program's objectives is a feasible proposition.

  4. Properties of Polymer Composites Used in High-Voltage Applications

    Directory of Open Access Journals (Sweden)

    Ilona Pleşa

    2016-04-01

    Full Text Available The present review article represents a comprehensive study on polymer micro/nanocomposites that are used in high-voltage applications. Particular focus is on the structure-property relationship of composite materials used in power engineering, by exploiting fundamental theory as well as numerical/analytical models and the influence of material design on electrical, mechanical and thermal properties. In addition to describing the scientific development of micro/nanocomposites electrical features desired in power engineering, the study is mainly focused on the electrical properties of insulating materials, particularly cross-linked polyethylene (XLPE and epoxy resins, unfilled and filled with different types of filler. Polymer micro/nanocomposites based on XLPE and epoxy resins are usually used as insulating systems for high-voltage applications, such as: cables, generators, motors, cast resin dry-type transformers, etc. Furthermore, this paper includes ample discussions regarding the advantages and disadvantages resulting in the electrical, mechanical and thermal properties by the addition of micro- and nanofillers into the base polymer. The study goals are to determine the impact of filler size, type and distribution of the particles into the polymer matrix on the electrical, mechanical and thermal properties of the polymer micro/nanocomposites compared to the neat polymer and traditionally materials used as insulation systems in high-voltage engineering. Properties such as electrical conductivity, relative permittivity, dielectric losses, partial discharges, erosion resistance, space charge behavior, electric breakdown, tracking and electrical tree resistance, thermal conductivity, tensile strength and modulus, elongation at break of micro- and nanocomposites based on epoxy resin and XLPE are analyzed. Finally, it was concluded that the use of polymer micro/nanocomposites in electrical engineering is very promising and further research work

  5. High temperature superconductors

    CERN Document Server

    Paranthaman, Parans

    2010-01-01

    This essential reference provides the most comprehensive presentation of the state of the art in the field of high temperature superconductors. This growing field of research and applications is currently being supported by numerous governmental and industrial initiatives in the United States, Asia and Europe to overcome grid energy distribution issues. The technology is particularly intended for densely populated areas. It is now being commercialized for power-delivery devices, such as power transmission lines and cables, motors and generators. Applications in electric utilities include current limiters, long transmission lines and energy-storage devices that will help industries avoid dips in electric power.

  6. Hazard classification assessment for the High Voltage Initiator

    Energy Technology Data Exchange (ETDEWEB)

    Cogan, J.D.

    1994-04-19

    An investigation was conducted to determine whether the High Voltage Initiator (Sandia p number 395710; Navy NAVSEA No. 6237177) could be assigned a Department of Transportation (DOT) hazard classification of ``IGNITERS, 1.4G, UN0325`` under Code of Federal Regulations, 49 CFR 173.101, when packaged per Mound drawing NXB911442. A hazard classification test was performed, and the test data led to a recommended hazard classification of ``IGNITERS, 1.4G, UN0325,`` based on guidance outlined in DOE Order 1540.2 and 49 CFR 173.56.

  7. High Voltage Operation of heavily irradiated silicon microstrip detectors

    CERN Document Server

    Gu, W H; Angarano, M M; Bader, A; Biggeri, U; Boemi, D; Braibant, S; Breuker, H; Bruzzi, Mara; Caner, A; Catacchini, E; Civinini, C; Creanza, D; D'Alessandro, R; Demaria, N; Eklund, C; Peisert, Anna; Feld, L; Fiore, L; Focardi, E; Fürtjes, A; Glessing, B; Hall, G; Hammerstrom, R; Dollan, Ralph; Huhtinen, M; Karimäki, V; König, S; Lenzi, M; Lübelsmeyer, K; Maggi, G; Mannelli, M; Marchioro, A; Mariotti, C; Mättig, P; McEvoy, B; Meschini, M; My, S; Pandoulas, D; Parrini, G; Pieri, M; Dollan, Ralph; Potenza, R; Raso, G; Raymond, M; Schmitt, B; Selvaggi, G; Siedling, R; Silvestris, L; Skog, K; Stefanini, G; Tempesta, P; Tricomi, A; Watts, S; Wittmer, B; De Palma, M

    1999-01-01

    We discuss the results obtained from the R&D studies, done within the CMS experiment at LHC related to the behaviour of silicon microstrip prototype detectors when they are operated at high bias voltages before and after heavy irradiation, simulating up to 10 years of LHC running conditions. We have found detectors from several manufacturesrs that are able to work at V_bias > 500 Volts before and after the irradiation procedure, maintaining an acceptable performance with S/N > 14, efficiency close to 100% and few ghost hits.

  8. A High-Voltage Bipolar Transconductance Amplifier for Electrotactile Stimulation

    Science.gov (United States)

    Schaning, Matthew A.; Kaczmarek, Kurt A.

    2008-01-01

    This article describes a high-performance transconductance amplifier specifically designed for electrotactile (electrocutaneous) stimulation. It enables voltages up to ±600 V to be produced at the output which will allow the psychophysiological performance associated with stimulation of the fingertip using various stimulation waveforms to be studied more thoroughly. The design has a transconductance of up to 20 mA/V, an 8.8-MΩ output resistance, and can provide output currents up to ±20 mA. A complete schematic diagram is presented along with a discussion of theory of operation and safety issues as well as performance and derating plots from the implemented design. PMID:18838369

  9. High Luminosity LHC matching section layout vs crab cavity voltage

    CERN Document Server

    Dalena, B; Chance, A; De Maria, R; Fartoukh, S

    2013-01-01

    In the framework of the HiLumi-LHC project we present a new possible variant for the layout of the LHC matching section located in the high luminosity insertions. This layout is optimized to reduce the demand on the voltage of the crab cavities, while substantially improving the optics squeeze-ability, both in ATS [1] and non-ATS mode. This new layout will be described in details together with its performance figures in terms of mechanical acceptance, chromatic properties and optics flexibility.

  10. Simulation Research of Transient Over-voltage on High-voltage Shunt Capacitor Banks

    Institute of Scientific and Technical Information of China (English)

    HU Quan-wei; ZHOU Xing-xing; SI Wen-rong; ZHANG Yang; LI Jur-hao; LI Yan-ming

    2011-01-01

    With the development of power systems,a large number of shunt capacitors are used to improve power quality in the distribution network.The shunt capacitor banks are operated much frequently,as a result,the capacitor banks will bear large numbers of over-voltage inevitably.If the over-voltage exceeds certain amplitude,the capacitor will be damaged.This paper aims at the capacitor banks in the 35 kV side of Shanghai Xu-xing 500 kV substation,and applies ATP-EMTP to simulate the over-voltages generated by operating the switches under different angles of the source.Finally,according to the results of simulation and theoretical analysis,a best choice (i.e.angles of the source) to switch on capacitor banks is proposed.In this case the over-voltage on the capacitor will be limited to lowest.

  11. Survey of high voltage electron microscopy worldwide in 1998.

    Energy Technology Data Exchange (ETDEWEB)

    Allen, C. W.

    1998-03-05

    High voltage TEMs were introduced commercially thirty years ago, with the installations of 500 kV Hitachi instruments at the Universities of Nagoya and Tokyo. Since that time 53 commercial instruments, having maximum accelerating potentials of 0.5-3.5 MV, will have been delivered by the end of 1998. Table 1 summarizes the sites and some information regarding those HVEMS which are available in 1998. This corrects, updates and expands an earlier report of this sort [2]. There have been three commercial HVEM manufacturers: AEI (UK), Hitachi and JEOL (Japan). The proportion of the total number of HVEMS produced by each manufacturer is similar to that reflected in Table 1: AEI and Kratos/AEI (12), Hitachi (20) and JEOL (21). The term Kratos/AEI refers to instruments delivered after the takeover of AEI by Grates in the late 1970's. In Table 1 only maximum accelerating potentials are listed, which is generally also the design value for which the resolution for imaging was optimized. It is important to realize that in many applications, especially those studying irradiation effects, much lower voltages may be employed somewhat routinely to minimize atom displacements by the incident electron beam during analysis. These minimum values range from 100 kV for the AEI and Kratos/AEI instruments to typically 400 kV for the current generation of atomic resolution instruments, the latter being well above the thresholds for displacement in light elements such as Al and Si and for displacement of anions in many ceramic materials such as the high Tc superconductors, for example. An additional potential problem is electron-induced sputtering and differential sputtering (unequal sputtering rates in multicomponent materials), especially when accurate elemental microanalysis is being attempted. These same issues may arise for intermediate voltage TEMs as well, of course.

  12. 30 CFR 77.704-1 - Work on high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on high-voltage lines. 77.704-1 Section 77... MINES Grounding § 77.704-1 Work on high-voltage lines. (a) No high-voltage line shall be regarded as... provided in § 77.103) that such high-voltage line has been deenergized and grounded. Such qualified...

  13. Reliability of High-Voltage Tantalum Capacitors. Parts 3 and 4)

    Science.gov (United States)

    Teverovsky, Alexander

    2010-01-01

    Weibull grading test is a powerful technique that allows selection and reliability rating of solid tantalum capacitors for military and space applications. However, inaccuracies in the existing method and non-adequate acceleration factors can result in significant, up to three orders of magnitude, errors in the calculated failure rate of capacitors. This paper analyzes deficiencies of the existing technique and recommends more accurate method of calculations. A physical model presenting failures of tantalum capacitors as time-dependent-dielectric-breakdown is used to determine voltage and temperature acceleration factors and select adequate Weibull grading test conditions. This model is verified by highly accelerated life testing (HALT) at different temperature and voltage conditions for three types of solid chip tantalum capacitors. It is shown that parameters of the model and acceleration factors can be calculated using a general log-linear relationship for the characteristic life with two stress levels.

  14. Novel Interleaved Converter with Extra-High Voltage Gain to Process Low-Voltage Renewable-Energy Generation

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2016-10-01

    Full Text Available This paper presents a novel interleaved converter (NIC with extra-high voltage gain to process the power of low-voltage renewable-energy generators such as photovoltaic (PV panel, wind turbine, and fuel cells. The NIC can boost a low input voltage to a much higher voltage level to inject renewable energy to DC bus for grid applications. Since the NIC has two circuit branches in parallel at frond end to share input current, it is suitable for high power applications. In addition, the NIC is controlled in an interleaving pattern, which has the advantages that the NIC has lower input current ripple, and the frequency of the ripple is twice the switching frequency. Two coupled inductors and two switched capacitors are incorporated to achieve a much higher voltage gain than conventional high step-up converters. The proposed NIC has intrinsic features such as leakage energy totally recycling and low voltage stress on power semiconductor. Thorough theoretical analysis and key parameter design are presented in this paper. A prototype is built for practical measurements to validate the proposed NIC.

  15. Electrical conduction mechanism in bulk ceramic insulators at high voltages until dielectric breakdown

    Science.gov (United States)

    Neusel, C.; Jelitto, H.; Schneider, G. A.

    2015-04-01

    In order to develop and verify a dielectric breakdown model for bulk insulators thicker than 100 μm, the knowledge of the dominating conduction mechanism at high electric fields, or respectively voltages, is necessary. The dielectric breakdown is the electrical failure of an insulator. In some existing breakdown models, ohmic conduction is assumed as dominating conduction mechanism. For verification, the dominating dc conduction mechanism of bulk insulators at room temperature was investigated by applying high voltages up to 70 kV to the insulator until dielectric breakdown occurs. Four conduction models, namely, ohmic, space charge limited, Schottky, and Poole-Frenkel conduction, were employed to identify the dominating conduction mechanism. Comparing the calculated permittivities from the Schottky and Poole-Frenkel coefficients with experimentally measured permittivity, Schottky and Poole-Frenkel conduction can be excluded as dominating conduction mechanism. Based on the current density voltage characteristics (J-V-curve) and the thickness-dependence of the current density, space charge limited conduction (SCLC) was identified to be the dominating conduction mechanism at high voltages leading to dielectric breakdown. As a consequence, breakdown models based on ohmic conduction are not appropriate to explain the breakdown of the investigated bulk insulators. Furthermore, the electrical failure of the examined bulk insulators can only be described correctly by a breakdown model which includes SCLC as conduction mechanism.

  16. A high voltage ratio and low ripple interleaved DC-DC converter for fuel cell applications.

    Science.gov (United States)

    Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

    2012-01-01

    This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters.

  17. High Temperature Aquifer Storage

    Science.gov (United States)

    Ueckert, Martina; Niessner, Reinhard; Baumann, Thomas

    2016-04-01

    Combined heat and power generation (CHP) is highly efficient because excess heat is used for heating and/or process energy. However, the demand of heat energy varies considerably throughout the year while the demand for electrical energy is rather constant. It seems economically and ecologically highly beneficial for municipalities and large power consumers such as manufacturing plants to store excess heat in groundwater aquifers and to recuperate this energy at times of higher demand. Within the project High Temperature Aquifer Storage, scientists investigate storage and recuperation of excess heat energy into the bavarian Malm aquifer. Apart from high transmissivity and favorable pressure gradients, the hydrochemical conditions are crucial for long-term operation. An enormous technical challenge is the disruption of the carbonate equilibrium - modeling results indicated a carbonate precipitation of 10 - 50 kg/d in the heat exchangers. The test included five injection pulses of hot water (60 °C up to 110 °C) and four tracer pulses, each consisting of a reactive and a conservative fluorescent dye, into a depth of about 300 m b.s.l. resp. 470 m b.s.l. Injection and production rates were 15 L/s. To achieve the desired water temperatures, about 4 TJ of heat energy were necessary. Electrical conductivity, pH and temperature were recorded at a bypass where also samples were taken. A laboratory container at the drilling site was equipped for analysing the concentration of the dyes and the major cations at sampling intervals of down to 15 minutes. Additional water samples were taken and analysed in the laboratory. The disassembled heat exchanger prooved that precipitation was successfully prevented by adding CO2 to the water before heating. Nevertheless, hydrochemical data proved both, dissolution and precipitation processes in the aquifer. This was also suggested by the hydrochemical modelling with PhreeqC and is traced back to mixture dissolution and changing

  18. Optical fiber imaging for high speed plasma motion diagnostics: applied to low voltage circuit breakers.

    Science.gov (United States)

    McBride, J W; Balestrero, A; Ghezzi, L; Tribulato, G; Cross, K J

    2010-05-01

    An integrated portable measurement system is described for the study of high speed and high temperature unsteady plasma flows such as those found in the vicinity of high current switching arcs. An array of optical fibers allows the formation of low spatial resolution images, with a maximum capture rate of 1 x 10(6) images per second (1 MHz), with 8 bit intensity resolution. Novel software techniques are reported to allow imaging of the arc; and to measure arc trajectories. Results are presented on high current (2 kA) discharge events in a model test fixture and on the application to a commercial low voltage circuit breaker.

  19. 30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. No electrical work shall be performed on low-, medium-, or high-voltage distribution circuits or...

  20. 30 CFR 75.705-1 - Work on high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on high-voltage lines. 75.705-1 Section 75... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Grounding § 75.705-1 Work on high-voltage lines. (a) Section 75.705 specifically prohibits work on energized high-voltage lines underground;...

  1. 30 CFR 77.807-3 - Movement of equipment; minimum distance from high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... high-voltage lines. 77.807-3 Section 77.807-3 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-3 Movement of equipment; minimum distance from high-voltage lines. When any part of any equipment operated on the surface of...

  2. 30 CFR 75.705-10 - Tying into energized high-voltage surface circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Tying into energized high-voltage surface....705-10 Tying into energized high-voltage surface circuits. If the work of forming an additional circuit by tying into an energized high-voltage surface line is performed from the ground, any...

  3. 21 CFR 892.1700 - Diagnostic x-ray high voltage generator.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Diagnostic x-ray high voltage generator. 892.1700... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1700 Diagnostic x-ray high voltage generator. (a) Identification. A diagnostic x-ray high voltage generator is a device that is intended...

  4. 30 CFR 75.811 - High-voltage underground equipment; grounding.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage underground equipment; grounding... COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.811 High-voltage underground equipment; grounding. Frames, supporting structures...

  5. 30 CFR 77.704-10 - Tying into energized high-voltage surface circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Tying into energized high-voltage surface... AREAS OF UNDERGROUND COAL MINES Grounding § 77.704-10 Tying into energized high-voltage surface circuits. If the work of forming an additional circuit by tying into an energized high-voltage surface line...

  6. 30 CFR 75.800 - High-voltage circuits; circuit breakers.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 75.800... § 75.800 High-voltage circuits; circuit breakers. High-voltage circuits entering the underground area of any coal mine shall be protected by suitable circuit breakers of adequate interrupting...

  7. High temperature interface superconductivity

    Energy Technology Data Exchange (ETDEWEB)

    Gozar, A., E-mail: adrian.gozar@yale.edu [Yale University, New Haven, CT 06511 (United States); Bozovic, I. [Yale University, New Haven, CT 06511 (United States); Brookhaven National Laboratory, Upton, NY 11973 (United States)

    2016-02-15

    Highlight: • This review article covers the topic of high temperature interface superconductivity. • New materials and techniques used for achieving interface superconductivity are discussed. • We emphasize the role played by the differences in structure and electronic properties at the interface with respect to the bulk of the constituents. - Abstract: High-T{sub c} superconductivity at interfaces has a history of more than a couple of decades. In this review we focus our attention on copper-oxide based heterostructures and multi-layers. We first discuss the technique, atomic layer-by-layer molecular beam epitaxy (ALL-MBE) engineering, that enabled High-T{sub c} Interface Superconductivity (HT-IS), and the challenges associated with the realization of high quality interfaces. Then we turn our attention to the experiments which shed light on the structure and properties of interfacial layers, allowing comparison to those of single-phase films and bulk crystals. Both ‘passive’ hetero-structures as well as surface-induced effects by external gating are discussed. We conclude by comparing HT-IS in cuprates and in other classes of materials, especially Fe-based superconductors, and by examining the grand challenges currently laying ahead for the field.

  8. A high-voltage rechargeable magnesium-sodium hybrid battery

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yifei; An, Qinyou; Cheng, Yingwen; Liang, Yanliang; Ren, Yang; Sun, Cheng-Jun; Dong, Hui; Tang, Zhongjia; Li, Guosheng; Yao, Yan

    2017-04-01

    Growing global demand of safe and low-cost energy storage technology triggers strong interests in novel battery concepts beyond state-of-art Li-ion batteries. Here we report a high-voltage rechargeable Mg–Na hybrid battery featuring dendrite-free deposition of Mg anode and Na-intercalation cathode as a low-cost and safe alternative to Li-ion batteries for large-scale energy storage. A prototype device using a Na3V2(PO4)3 cathode, a Mg anode, and a Mg–Na dual salt electrolyte exhibits the highest voltage (2.60 V vs. Mg) and best rate performance (86% capacity retention at 10C rate) among reported hybrid batteries. Synchrotron radiation-based X-ray absorption near edge structure (XANES), atomic-pair distribution function (PDF), and high-resolution X-ray diffraction (HRXRD) studies reveal the chemical environment and structural change of Na3V2(PO4)3 cathode during the Na ion insertion/deinsertion process. XANES study shows a clear reversible shift of vanadium K-edge and HRXRD and PDF studies reveal a reversible two-phase transformation and V–O bond length change during cycling. The energy density of the hybrid cell could be further improved by developing electrolytes with a higher salt concentration and wider electrochemical window. This work represents a significant step forward for practical safe and low-cost hybrid batteries.

  9. Class D audio amplifiers for high voltage capacitive transducers

    DEFF Research Database (Denmark)

    Nielsen, Dennis

    voltage capacitive transducers can be constructed with THD+N below 0.1 % and peak efficiency above 80 %. However the complexity of the amplifier combined with the current high cost of components, makes the technology of DEAP based loudspeaker unfeasible. Suggestions to future work in the pursuit...... of high volume, weight, and cost. High efficient class D amplifiers are now widely available offering power densities, that their linear counterparts can not match. Unlike the technology of audio amplifiers, the loudspeaker is still based on the traditional electrodynamic transducer invented by C.W. Rice....... Due to the similarities between the electrostatic loudspeaker and the DEAP transducer, the state-of-the-art has a special focus on amplifiers for electrostatic loudspeakers. Amplifiers for other type of capacitive transducers like piezoelectric ones are also considered. Finally the current state...

  10. Design and Development of a Series Switch for High Voltage in RF Heating

    Science.gov (United States)

    Patel, Himanshu K.; Shah, Deep; Thacker, Mauli; Shah, Atman

    2013-02-01

    Plasma is the fourth state of matter. To sustain plasma in its ionic form very high temperature is essential. RF heating systems are used to provide the required temperature. Arching phenomenon in these systems can cause enormous damage to the RF tube. Heavy current flows across the anode-cathode junction, which need to be suppressed in minimal time for its protection. Fast-switching circuit breakers are used to cut-off the load from the supply in cases of arching. The crowbar interrupts the connection between the high voltage power supply (HVPS) and the RF tube for a temporary period between which the series switch has to open. The crowbar shunts the current across the load but in the process leads to short circuiting the HVPS. Thus, to protect the load as well as the HVPS a series switch is necessary. This paper presents the design and development of high voltage Series Switch for the high power switching applications. Fiber optic based Optimum triggering scheme is designed and tested to restrict the time delay well within the stipulated limits. The design is well supported with the experimental results for the whole set-up along with the series switch at various voltage level before its approval for operation at 5.2 kV.

  11. Compact high voltage, high peak power, high frequency transformer for converter type modulator applications.

    Science.gov (United States)

    Reghu, T; Mandloi, V; Shrivastava, Purushottam

    2016-04-01

    The design and development of a compact high voltage, high peak power, high frequency transformer for a converter type modulator of klystron amplifiers is presented. The transformer has been designed to operate at a frequency of 20 kHz and at a flux swing of ±0.6 T. Iron (Fe) based nanocrystalline material has been selected as a core for the construction of the transformer. The transformer employs a specially designed solid Teflon bobbin having 120 kV insulation for winding the high voltage secondary windings. The flux swing of the core has been experimentally found by plotting the hysteresis loop at actual operating conditions. Based on the design, a prototype transformer has been built which is per se a unique combination of high voltage, high frequency, and peak power specifications. The transformer was able to provide 58 kV (pk-pk) at the secondary with a peak power handling capability of 700 kVA. The transformation ratio was 1:17. The performance of the transformer is also presented and discussed.

  12. A 5 V-to-3.3 V CMOS Linear Regulator with Three-Output Temperature-Independent Reference Voltages

    Directory of Open Access Journals (Sweden)

    San-Fu Wang

    2016-01-01

    Full Text Available This paper presents a 5 V-to-3.3 V linear regulator circuit, which uses 3.3 V CMOS transistors to replace the 5 V CMOS transistors. Thus, the complexity of the manufacturing semiconductor process can be improved. The proposed linear regulator is implemented by cascode architecture, which requires three different reference voltages as the bias voltages of its circuit. Thus, the three-output temperature-independent reference voltage circuit is proposed, which provides three accurate reference voltages simultaneously. The three-output temperature-independent reference voltages also can be used in other circuits of the chip. By using the proposed temperature-independent reference voltages, the proposed linear regulator can provide an accurate output voltage, and it is suitable for low cost, small size, and highly integrated system-on-chip (SoC applications. Moreover, the proposed linear regulator uses the cascode technique, which improves both the gain performance and the isolation performance. Therefore, the proposed linear regulator has a good performance in reference voltage to output voltage isolation. The voltage variation of the linear regulator is less than 2.153% in the temperature range of −40°C–120°C, and the power supply rejection ratio (PSRR is less than −42.8 dB at 60 Hz. The regulator can support 0~200 mA output current. The core area is less than 0.16 mm2.

  13. Characterization of Highly Efficient CdTe Thin Film Solar Cells by the Capacitance-Voltage Profiling Technique

    Science.gov (United States)

    Okamoto, Tamotsu; Yamada, Akira; Konagai, Makoto

    2000-05-01

    The electrical properties of highly efficient CdTe thin film solar cells prepared by close-spaced sublimation (CSS) were investigated by capacitance-voltage (C-V) measurement. According to the dependence of the cell performance on the substrate temperature in the CSS process, the open-circuit voltage (Voc) increased with increasing the substrate temperature below 630°C@. The carrier concentration profiles revealed that the net acceptor concentration exponentially increased from the CdS/CdTe interface to the rear and that the acceptor concentration increased with increasing substrate temperature. This result suggests that Voc is improved as a result of the increase in the acceptor concentration.

  14. High Efficiency Interleaved Active Clamped Dc-Dc Converter with Fuel Cell for High Voltage Applications

    Directory of Open Access Journals (Sweden)

    Sona P

    2014-02-01

    Full Text Available A high efficiency interleaved ZVS active clamped current fed dc-dc converter is proposed in this paper specially used for fuel cell applications. As the fuel cell output is very low we are in need of a step up dc-dc converter. Here a current fed dc-dc converter is used. Two current fed dc-dc converters are interleaved by connecting their inputs in parallel and outputs in series. With this proposed methodology input current ripples in the fuel cell stacks can be reduced and a regulated output voltage ripples can be obtained. The active clamping circuit used in this model absorbs the turn off voltage spikes hence low voltage devices with low on state resistance can be used.Voltage doubler circuits will give double the output voltage than normal with smaller transformer turns ratio and flexibility. The proposed method is simulated in MATLAB for verifying the accuracy of the proposed design.

  15. High temperature interfacial superconductivity

    Science.gov (United States)

    Bozovic, Ivan [Mount Sinai, NY; Logvenov, Gennady [Port Jefferson Station, NY; Gozar, Adrian Mihai [Port Jefferson, NY

    2012-06-19

    High-temperature superconductivity confined to nanometer-scale interfaces has been a long standing goal because of potential applications in electronic devices. The spontaneous formation of a superconducting interface in bilayers consisting of an insulator (La.sub.2CuO.sub.4) and a metal (La.sub.1-xSr.sub.xCuO.sub.4), neither of which is superconducting per se, is described. Depending upon the layering sequence of the bilayers, T.sub.c may be either .about.15 K or .about.30 K. This highly robust phenomenon is confined to within 2-3 nm around the interface. After exposing the bilayer to ozone, T.sub.c exceeds 50 K and this enhanced superconductivity is also shown to originate from a 1 to 2 unit cell thick interfacial layer. The results demonstrate that engineering artificial heterostructures provides a novel, unconventional way to fabricate stable, quasi two-dimensional high T.sub.c phases and to significantly enhance superconducting properties in other superconductors. The superconducting interface may be implemented, for example, in SIS tunnel junctions or a SuFET.

  16. High precision, low disturbance calibration of the High Voltage system of the CMS Barrel Electromagnetic Calorimeter

    CERN Document Server

    Marzocchi, Badder

    2017-01-01

    The CMS Electromagnetic Calorimeter is made of scintillating lead tungstate crystals, using avalanche photodiodes (APD) as photo-detectors in the barrel part. The high voltage system, consisting of 1224 channels, biases groups of 50 APD pairs, each at a voltage of about 380 V. The APD gain dependence on the voltage is 3pct/V. A stability of better than 60 mV is needed to have negligible impact on the calorimeter energy resolution. Until 2015 manual calibrations were performed yearly. A new calibration system was deployed recently, which satisfies the requirement of low disturbance and high precision. The system is discussed in detail and first operational experience is presented.

  17. Atmospheric pressure microplasmas in ZnO nanoforests under high voltage stress

    Directory of Open Access Journals (Sweden)

    Nafisa Noor

    2015-09-01

    Full Text Available Atmospheric pressure ZnO microplasmas have been generated by high amplitude single pulses and DC voltages applied using micrometer-separated probes on ZnO nanoforests. The high voltage stress triggers plasma breakdown and breakdown in the surrounding air followed by sublimation of ZnO resulting in strong blue and white light emission with sharp spectral lines and non-linear current-voltage characteristics. The nanoforests are made of ZnO nanorods (NRs grown on fluorine doped tin oxide (FTO glass, poly-crystalline silicon and bulk p-type silicon substrates. The characteristics of the microplasmas depend strongly on the substrate and voltage parameters. Plasmas can be obtained with pulse durations as short as ∼1 μs for FTO glass substrate and ∼100 ms for the silicon substrates. Besides enabling plasma generation with shorter pulses, NRs on FTO glass substrate also lead to better tunability of the operating gas temperature. Hot and cold ZnO microplasmas have been observed with these NRs on FTO glass substrate. Sputtering of nanomaterials during plasma generation in the regions surrounding the test area has also been noticed and result in interesting ZnO nanostructures (‘nano-flowers’ and ‘nano-cauliflowers’. A practical way of generating atmospheric pressure ZnO microplasmas may lead to various lighting, biomedical and material processing applications.

  18. Temperature dependence of current–voltage characteristics of Au/-GaAs epitaxial Schottky diode

    Indian Academy of Sciences (India)

    R Singh; S K Arora; Renu Tyagi; S K Agarwal; D Kanjilal

    2000-12-01

    The influence of temperature on current–voltage (–) characteristics of Au/-GaAs Schottky diode formed on -GaAs epitaxial layer grown by metal organic chemical vapour deposition technique has been investigated. The dopant concentration in the epitaxial layer is 1 × 1016 cm−3 . The change in various parameters of the diode like Schottky barrier height (SBH), ideality factor and reverse breakdown voltage as a function of temperature in the range 80−300 K is presented. The variation of apparent Schottky barrier height and ideality factor with temperature has been explained considering lateral inhomogeneities in the Schottky barrier height in nanometer scale lengths at the metal–semiconductor interface.

  19. The Cu2ZnSnS4 solar cell with high open circuit voltage

    Science.gov (United States)

    Yang, Min; Ma, Xun; Jiang, Zhi; Li, Zhishan; Liu, Sijia; Lu, Yilei; Wang, Shurong

    2017-03-01

    In this paper, the effects of two different sulfurization processes on the CZTS films were investigated, and the results indicated that a rapid high-temperature crystallization process after sulfurization was beneficial for CZTS thin films to obtain a compact and flat surface with large grains. However, a common sulfurization without rapid high-temperature crystallization process would easily lead to undesirable properties of films, such as rough surface with pin holes, which degenerate the performance of devices. Cu2ZnSnS4 (CZTS) solar cell based on a rapid high-temperature process after sulfurization achieved a high open circuit voltage of 722 mV and the best efficiency 3.32% was obtained.

  20. Cryogenic temperature dependence of the voltage transfer characteristics of CMOS inverters

    Science.gov (United States)

    Deen, M. J.

    1988-08-01

    The voltage transfer characteristics of CMOS inverters have been studied in detail as a function of temperature between 77 and 300 K and supply voltages between 2 and 20 V. The logic levels, maximum gain, unity gain points, noise margins and other parameters, such as ( VH - VL), all showed a marked improvement as the temperature was lowered. In particular, for one inverter with a supply of 5 V, the maximum gain increased from 57 to 105, ( VIH - VIL) decreased from 0.50 to 0.28 V and ( VH - VL) increased from 4.46 to 4.75 V on decreasing the temperature from 300 to 77 K. For all the inverters, these and other parameters showed a smooth monotonic improvement as the temperature was lowered. These and the other results obtained can be qualitatively explained as due to an increase in the absolute values in the threshold voltages of the PMOS and NMOS transistors and to an increase in the carrier mobility as the temperature was lowered.

  1. Spatial and temporal instabilities in high voltage power devices

    Energy Technology Data Exchange (ETDEWEB)

    Milady, Saeed

    2010-01-29

    Dynamic avalanche can occur during the turn-off process of high voltage bipolar devices, e.g. IGBTs and p{sup +}n{sup -}n{sup +} power diodes, that may result in spatial instabilities of the homogeneous current density distribution across the device and the formation of current filaments. Filaments may cause the destruction of the device, mainly because of the high local temperatures. The first part of this work is dedicated to the current filament behavior. The positive feedback mechanisms caused by the transient current flow through the gate capacitance of an IGBT operating under short circuit conditions may result in oscillations and temporal instabilities of the IGBT current. The oscillations may cause electromagnetic interference (EMI). Furthermore, the positive feedback mechanism may accelerate the over-heating of the device and result in a thermal run-away. This is the subject of the second part of this work. In the first part of this work using the device simulation results of power diodes the underlying physical mechanisms of the filament dynamic is investigated. Simulation results of diode structures with evenly distributed doping inhomogeneities show that, the filament motion gets smoother as the distance between the inhomogeneities decreases. Hopping to faraway inhomogeneities turns into the hopping to neighboring ones and finally a smooth motion. In homogeneous structures the slow inhibitory effect of the electron-hole plasma extraction and the fast activation, due to hole current flowing along the filament, result in a smooth filament motion. An analytical model for the filament velocity under isothermal conditions is presented that can reproduce the simulation data satisfactorily. The influence of the boundary conditions on the filament behavior is discussed. The positive beveled edge termination prohibits a long stay of the filament at the edge reducing the risk of filament pinning. Self-heating effects may turn the initially electrically triggered

  2. High-voltage atmospheric breakdown across intervening rutile dielectrics.

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, Kenneth Martin; Simpson, Sean; Coats, Rebecca Sue; Jorgenson, Roy Eberhardt; Hjalmarson, Harold Paul; Pasik, Michael Francis

    2013-09-01

    This report documents work conducted in FY13 on electrical discharge experiments performed to develop predictive computational models of the fundamental processes of surface breakdown in the vicinity of high-permittivity material interfaces. Further, experiments were conducted to determine if free carrier electrons could be excited into the conduction band thus lowering the effective breakdown voltage when UV photons (4.66 eV) from a high energy pulsed laser were incident on the rutile sample. This report documents the numerical approach, the experimental setup, and summarizes the data and simulations. Lastly, it describes the path forward and challenges that must be overcome in order to improve future experiments for characterizing the breakdown behavior for rutile.

  3. High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip

    Science.gov (United States)

    Issadore, David; Franke, Thomas; Brown, Keith A.; Hunt, Thomas P.; Westervelt, Robert M.

    2010-01-01

    A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm2 in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip’s surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. PMID:20625468

  4. Evaluation of Epoxy Nanocomposites for High Voltage Insulation

    Science.gov (United States)

    Iyer, Ganpathy

    Polymeric materials containing nanometer (nm) size particles are being introduced to provide compact shapes for low and medium voltage insulation equipment. The nanocomposites may provide superior electrical performance when compared with those available currently, such as lower dielectric losses and increased dielectric strength, tracking and erosion resistance, and surface hydrophobicity. All of the above mentioned benefits can be achieved at a lower filler concentration (resistance tests were conducted over 500 hours to monitor degradation in the samples due to corona. These tests revealed improvements in partial discharge endurance of nanocomposite samples. These improvements could not be adequately explained using a macroscopic quantity such as thermal conductivity. Thermo gravimetric analysis (TGA) showed higher weight loss initiation temperatures for nanofilled samples which is in agreement with the corona resistance experimental results. Theoretical models have also been developed in this work to complement the results of the corona resistance experiment and the TGA analysis. Degradation model was developed to map the erosion path using Dijkstra's shortest path algorithm. A thermal model was developed to calculate the localized temperature distribution in the micro and nano-filled samples using the PDE toolbox in MATLAB. Both the models highlight the fact that improvement in nanocomposites is not limited to the filler concentrations that were tested experimentally.

  5. Self-Healable Electrical Insulation for High Voltage Applications

    Science.gov (United States)

    Williams, Tiffany S.

    2017-01-01

    Polymeric aircraft electrical insulation normally degrades by partial discharge with increasing voltage, which causes excessive localized Joule heating in the material and ultimately leads to dielectric failure of the insulator through thermal breakdown. Developing self-healing insulation could be a viable option to mitigate permanent mechanical degradation, thus increasing the longevity of the insulation. Instead of relying on catalyst and monomer-filled microcapsules to crack, flow, and cure at the damaged sites described in well-published mechanisms, establishment of ionic crosslinks could allow for multiple healing events to occur with the added benefit of achieving full recovery strength under certain thermal environments. This could be possible if the operating temperature of the insulator is the same as or close to the temperature where ionic crosslinks are formed. Surlyn, a commercial material with ionic crosslinks, was investigated as a candidate self-healing insulator based off prior demonstrations of self-healing behavior. Thin films of varying thicknesses were investigated and the effects of thickness on the dielectric strength were evaluated and compared to representative polymer insulators. The effects of thermal conditioning on the recovery strength and healing were observed as a function of time following dielectric breakdown. Moisture absorption was also studied to determine if moisture absorption rates in Surlyn were lower than that of common polyimides.

  6. A novel on-chip high to low voltage power conversion circuit

    Institute of Scientific and Technical Information of China (English)

    Wang Hui; Wang Songlin; Lai Xinquan; Ye Qiang; Mou Zaixin; Li Xianrui; Guo Baolong

    2009-01-01

    A novel power supply transform technique for high voltage IC based on the TSMC 0.6μm BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm2 area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/℃. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.

  7. A consistent approach to estimate the breakdown voltage of high voltage electrodes under positive switching impulses

    Science.gov (United States)

    Arevalo, L.; Wu, D.; Jacobson, B.

    2013-08-01

    The main propose of this paper is to present a physical model of long air gap electrical discharges under positive switching impulses. The development and progression of discharges in long air gaps are attributable to two intertwined physical phenomena, namely, the leader channel and the streamer zone. Experimental studies have been used to develop empirical and physical models capable to represent the streamer zone and the leader channel. The empirical ones have led to improvements in the electrical design of high voltage apparatus and insulation distances, but they cannot take into account factors associated with fundamental physics and/or the behavior of materials. The physical models have been used to describe and understand the discharge phenomena of laboratory and lightning discharges. However, because of the complex simulations necessary to reproduce real cases, they are not in widespread use in the engineering of practical applications. Hence, the aim of the work presented here is to develop a model based on physics of the discharge capable to validate and complement the existing engineering models. The model presented here proposes a new geometrical approximation for the representation of the streamer and the calculation of the accumulated electrical charge. The model considers a variable streamer region that changes with the temporal and spatial variations of the electric field. The leader channel is modeled using the non local thermo-equilibrium equations. Furthermore, statistical delays before the inception of the first corona, and random distributions to represent the tortuous nature of the path taken by the leader channel were included based on the behavior observed in experimental tests, with the intention of ensuring the discharge behaved in a realistic manner. For comparison purposes, two different gap configurations were simulated. A reasonable agreement was found between the physical model and the experimental test results.

  8. Automatic Functional Step-up System in High-Voltage Installation

    Institute of Scientific and Technical Information of China (English)

    陈方泉; 严一白; 宋进; 林财兴

    2004-01-01

    This article describes automatic functional step-up systems in high-voltage installation, with emphases on functional process of step-up and step-down, two-circuit control and elimination of tip burr voltage.

  9. Unique Power Dense, Configurable, Robust, High-Voltage Power Supplies Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Princeton Power will develop and deliver three small, lightweight 50 W high-voltage power supplies that have a configurable output voltage range from 500 to 50 kVDC....

  10. Battery powered high output voltage bidirectional flyback converter for cylindrical DEAP actuator

    DEFF Research Database (Denmark)

    Huang, Lina; Thummala, Prasanth; Zhang, Zhe;

    2012-01-01

    DEAP (Dielectric Electro Active Polymer) actuator is essentially a capacitive load and can be applied in various actuation occasions. However, high voltage is needed to actuate it. In this paper, a high voltage bidirectional flyback converter with low input voltage is presented. The fundamental....... The design parameters for flyback transformer and snubber circuits are illustrated. Moreover, the experimental waveforms are provided....

  11. 30 CFR 57.12071 - Movement or operation of equipment near high-voltage powerlines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Movement or operation of equipment near high-voltage powerlines. 57.12071 Section 57.12071 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION...-voltage powerlines. When equipment must be moved or operated near energized high-voltage powerlines...

  12. 30 CFR 56.12071 - Movement or operation of equipment near high-voltage power lines.

    Science.gov (United States)

    2010-07-01

    ...-voltage power lines. 56.12071 Section 56.12071 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... NONMETAL MINES Electricity § 56.12071 Movement or operation of equipment near high-voltage power lines. When equipment must be moved or operated near energized high-voltage powerlines (other than...

  13. 30 CFR 77.807-2 - Booms and masts; minimum distance from high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ...-voltage lines. 77.807-2 Section 77.807-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-2 Booms and masts; minimum distance from high-voltage lines. The booms and masts of equipment operated on the surface of...

  14. Understanding and Improving High Voltage Vacuum Insulators for Microsecond Pulses

    Energy Technology Data Exchange (ETDEWEB)

    Javedani, J B; Goerz, D A; Houck, T L; Lauer, E J; Speer, R D; Tully, L K; Vogtlin, G E; White, A D

    2007-03-05

    High voltage insulation is one of the main areas of pulsed power research and development, and dielectric breakdown is usually the limiting factor in attaining the highest possible performance in pulsed power devices. For many applications the delivery of pulsed power into a vacuum region is the most critical aspect of operation. The surface of an insulator exposed to vacuum can fail electrically at an applied field more than an order or magnitude below the bulk dielectric strength of the insulator. This mode of breakdown, called surface flashover, imposes serious limitations on the power flow into a vacuum region. This is especially troublesome for applications where high voltage conditioning of the insulator and electrodes is not practical and for applications where relatively long pulses, on the order of several microseconds, are required. The goal of this project is to establish a sound fundamental understanding of the mechanisms that lead to surface flashover, and then evaluate the most promising techniques to improve vacuum insulators and enable high voltage operation at stress levels near the intrinsic bulk breakdown limits of the material. The approach we proposed and followed was to develop this understanding through a combination of theoretical and computation methods coupled with experiments to validate and quantify expected behaviors. In this report we summarize our modeling and simulation efforts, theoretical studies, and experimental investigations. The computational work began by exploring the limits of commercially available codes and demonstrating methods to examine field enhancements and defect mechanisms at microscopic levels. Plasma simulations with particle codes used in conjunction with circuit models of the experimental apparatus enabled comparisons with experimental measurements. The large scale plasma (LSP) particle-in-cell (PIC) code was run on multiprocessor platforms and used to simulate expanding plasma conditions in vacuum gap regions

  15. Simulation Model solves exact the Enigma named Generating high Voltages and high Frequencies by Tesla Coil

    Directory of Open Access Journals (Sweden)

    Simo Janjanin

    2016-11-01

    Full Text Available Simulation model of Tesla coil has been successfully completed, and has been verified the procedure and functioning. The literature and documentation for the model were taken from the rich sources, especially the copies of Tesla patents. The oscillating system‟s electrical scheme consists of the voltage supply 220/50 Hz, Fe transformer, capacitor and belonging chosen electrical components, the air gap in the primary Tesla coil (air transformer and spark gap in the exit of the coil. The investigation of the oscillating process Tesla coil‟s system using the simulation model in MATLAB & SIMULINK have given the exact solution the enigma named the generating high voltage and high frequency the Tesla‟s coil. The inductance voltage from the spark current in the primary (coil with its high voltage impulse excites the oscillating series circuit Ce-L3-R3 on the secondary of the air transformer to its own damped oscillations

  16. 正弦高压驱动的氩等离子体射流长度和温度特性的研究∗%Investigation on the Length and Temperature of an Ar Plasma Jet Driven by Sinusoidal High Voltage

    Institute of Scientific and Technical Information of China (English)

    俞永波; 杨兰兰; 屠彦; 户玎岚

    2015-01-01

    大气压低温等离子体射流的长度和温度是射流的两个重要的参数,利用10kHz的正弦高压驱动在大气环境中产生了稳定的Ar等离子体射流,并对射流的长度特性和温度特性进行了研究。研究发现射流的长度随着外加电压的增加而增加,随着气流速率的增加先增加,到达一定值后又逐渐减小。利用光纤温度计和光谱仪测量并计算了射流的宏观温度以及电子激发温度,发现射流的宏观温度接近室温,而电子激发温度均小于1.5×104 K,基本属于冷等离子体范畴,并且它们均随着外加电压的增加而增加。%Length and temperature are two important parameters of the atmospheric plasma jet. An argon plasma jet has been generated in the atmospheric environment driven by 10 kHz sinusoidal high voltage. The length and tem-perature of the plasma jet were measured by the optical and electrical instruments. The results show that the length of the plasma jet increases with the applied voltage,but first increases with the flow rate and then decreases gradual-ly with a further increase of the flow rate. The jet temperature and the electron excited temperature were measured and calculated by the optical fiber thermometer and spectrometer. The jet temperature is closed to the room tempera-ture and the electron excited temperature is less than 1.5×104 K,which is among the range of the cold plasma. Mo-reover,both of them rise with the voltage increasing.

  17. High Voltage Installation of PS Linac 1 Preinjector

    CERN Multimedia

    CERN PhotoLab

    1974-01-01

    The high-voltage installation of the linac 1 preinjector in its house-sized Faraday cage. Originally driven by a 520 kV Cockcroft-Walton generator, at the time of this picture the HV came from a 520 kV SAMES generator. The column in the front carries a capacitor. The cubicle in the right background is the electronics platform (see 7403120). The round structure at left houses the ion source, from where the protons (and sometimes other ions), electrostatically accelerated to 520 keV, enter the Alvarez structure of linac 1, to be accelerated to 50 MeV. Jean-Luc Vallet is busy with servicing the installation. See also 7403064X, 7403066X.

  18. Control Strategy for Cascaded Medium - High Voltage STATCOM

    Directory of Open Access Journals (Sweden)

    Libing Chen

    2013-12-01

    Full Text Available Control strategy is researched for cascaded medium high static synchronous compensator to provide synthetic compensation ability of reactive power, harmonics and asymmetric currents. Basing on selective harmonic compensation strategy, a reference current detection method utilizing the combination of synchronous reference frame transformation and discrete Fourier transformation is proposed. The tracking control of instruction current is implemented by multi-carrier pulse width modulation (PWM. In allusion to the multi-carrier PWM, the capacitor voltage balancing control at the dc side is realized by a type of software based on the energy balance principle of the inverter bridge. The proposed control strategy is convenient for engineering implementation given its low calculation burden and simplicity. The effectiveness of the proposed control strategy is proven by both simulation and experimental results.

  19. High voltage direct current modelling in optimal power flows

    Energy Technology Data Exchange (ETDEWEB)

    Ambriz-Perez, H. [Comision Federal de Electricidad, Mexico, Unidad de Ingenieria Especializada, Rio Rodano No. 14 - Piso 10, Sala 1002, Col. Cuauhtemoc, C.P. 06598, Mexico, D.F. (Mexico); Acha, E. [Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G128LT, Scotland (United Kingdom); Fuerte-Esquivel, C.R. [Faculty of Electrical Engineering, Universidad Michoacana de San Nicolas de Hidalgo, Morelia 58030, Michoacan (Mexico)

    2008-03-15

    Two-terminal high voltage direct current (HVDC) transmission links are in operation throughout the world. They are key elements in electrical power networks; their representation is oversimplified or ignored in most power system studies. This is particularly the case in Optima Power Flow (OPF) studies. Hence, an OPF program has been extended to incorporate HVDC links, taking due account of overlapping and power transfer control characteristics. This is a new development in Newton Optimal Power Flows, where the converter equations are included directly in the matrix W. The method is indeed a unified one since the solution vector is extended to accommodate the DC variables. The HVDC link model correctly takes into account the relevant DC limit variables. The impact of HVDC links on OPF studies is illustrated by numeric examples, which includes a 5-node system, the AEP 14-node and a 166-node system. (author)

  20. High-voltage, low-inductance gas switch

    Science.gov (United States)

    Gruner, Frederick R.; Stygar, William A.

    2016-03-22

    A low-inductance, air-insulated gas switch uses a de-enhanced annular trigger ring disposed between two opposing high voltage electrodes. The switch is DC chargeable to 200 kilovolts or more, triggerable, has low jitter (5 ns or less), has pre-fire and no-fire rates of no more than one in 10,000 shots, and has a lifetime of greater than 100,000 shots. Importantly, the switch also has a low inductance (less than 60 nH) and the ability to conduct currents with less than 100 ns rise times. The switch can be used with linear transformer drives or other pulsed-power systems.

  1. Effect of temperature on the electronic/ionic transport properties of porous LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} with high voltage for lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Yongli, E-mail: lilyshuoxu@163.com; Wang, Mingzhen; Wang, Jiali; Zhuang, Quanchao, E-mail: zhuangquanchao@126.com

    2016-09-01

    Porous spinel LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} microspheres were successfully synthesized by a facile method with microspheres MnCO{sub 3} template, and characterized by XRD and SEM. The as-synthesized porous LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} microspheres exhibit high rate capability and good cycle performance, with the specific discharge capacity of 125.5, 125.4, 121 and 97.6 mA h/g at 1, 2, 3 and 5 C, respectively, and the capacity retention of 85.6% at 5 C after 100 cycles, which are attributed to the porous structure. It is found that the EIS features of spinel LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} cathode are related to the temperature, and the middle to high frequency arc is observed in the Nyquist diagram at temperatures below zero, which is attributed to the electronic properties of the electrode material. In 1 mol/L LiPF{sub 6}-EC:DEC:DMC electrolyte solutions, the energy barriers for the ion jump related to migration of lithium ions through the SEI film of the spinel LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} cathode are determined to be 16.89 kJ/mol, the thermal activation energy of the electronic conductivity to be 0.348 eV, and the intercalation-deintercalation reaction activation energies to be 0.619 eV, respectively. - Highlights: • Porous spinel LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} microspheres cathode were synthesized. • Porous LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} microspheres show high rate and excellent cycle characteristic. • The EIS features of spinel LiNi{sub 0.5}Mn{sub 1.5}O{sub 4} have related to temperature. • Three different energies of kinetic characterization at 4.7 V are calculated.

  2. HIGH TEMPERATURE VACUUM MIXER

    Directory of Open Access Journals (Sweden)

    E. D. Chertov

    2015-01-01

    Full Text Available The work is devoted to the creation of a new type of mixer to produce homogeneous mixtures of dissimilar materials applied to recycling of housing and communal services waste. The article describes the design of a dual-chamber device of the original high-temperature vacuum mixer, there investigated the processes occurring in the chambers of such devices. The results of theoretical and experimental research of the process of mixing recycled polyethylene with a mixture of "grinded food waste – Eco wool” are presented. The problem of the optimum choice of bending the curvilinear blades in the working volume of the seal, which is achieved by setting their profile in the form of involute arc of several circles of different radii, is examined . The dependences, allowing to define the limits of the changes of the main mode parameters the angular velocity of rotation of the working body of the mixer using two ways of setting the profile of the curvilinear blade mixer are obtained. Represented design of the mixer is proposed to use for a wide range of tasks associated with the mixing of the components with a strongly pronounced difference of physic al chemical properties and, in particular, in the production of composites out of housing and communal services waste.

  3. Plasma Interaction with International Space Station High Voltage Solar Arrays

    Science.gov (United States)

    Heard, John W.

    2002-01-01

    The International Space Station (ISS) is presently being assembled in low-earth orbit (LEO) operating high voltage solar arrays (-160 V max, -140 V typical with respect to the ambient atmosphere). At the station's present altitude, there exists substantial ambient plasma that can interact with the solar arrays. The biasing of an object to an electric potential immersed in plasma creates a plasma "sheath" or non-equilibrium plasma around the object to mask out the electric fields. A positively biased object can collect electrons from the plasma sheath and the sheath will draw a current from the surrounding plasma. This parasitic current can enter the solar cells and effectively "short out" the potential across the cells, reducing the power that can be generated by the panels. Predictions of collected current based on previous high voltage experiments (SAMPIE (Solar Array Module Plasma Interactions Experiment), PASP+ (Photovoltaic Array Space Power) were on the order of amperes of current. However, present measurements of parasitic current are on the order of several milliamperes, and the current collection mainly occurs during an "eclipse exit" event, i.e., when the space station comes out of darkness. This collection also has a time scale, t approx. 1000 s, that is much slower than any known plasma interaction time scales. The reason for the discrepancy between predictions and present electron collection is not understood and is under investigation by the PCU (Plasma Contactor Unit) "Tiger" team. This paper will examine the potential structure within and around the solar arrays, and the possible causes and reasons for the electron collection of the array.

  4. Architecture for a High-to-Medium-Voltage Power Converter

    Science.gov (United States)

    Vorpenian, Vatche

    2008-01-01

    A power converter now undergoing development is required to operate at a DC input potential ranging between 5.5 and 10 kV and a DC output potential of 400 V at a current up to 25 A. This power converter is also required to be sufficiently compact and reliable to fit and operate within the confines of a high-pressure case to be lowered to several miles (approx.5 km) below the surface of the ocean. The architecture chosen to satisfy these requirements calls for a series/ parallel arrangement of 48 high-frequency, pulse-width-modulation (PWM), transformer-isolation DC-to-DC power converter blocks. The input sides of the converter blocks would be connected in series so that the input potential would be divided among them, each of them being exposed to an input potential of no more than 10 kV/48 . 210 V. The series connection of inputs would also enforce a requirement that all the converter blocks operate at the same input current. The outputs of the converter blocks would be connected in a matrix comprising 6 parallel legs, each leg being a cascade of eight outputs wired in series (see figure). All the converter blocks would be identical within the tolerances of the values of their components. A single voltage feedback loop would regulate the output potential. All the converter blocks would be driven by the same PWM waveform generated by this feedback loop. The power transformer of each converter block would have a unity turns ratio and would be capable of withstanding as much as 10 kVDC between its primary and secondary windings. (Although, in general, the turns ratio could be different from unity, the simplest construction for minimizing leakage and maximizing breakdown voltage is attained at a turns ratio of unity.)

  5. High Voltage Cable Splicing and Cable Termination Techniques

    Science.gov (United States)

    1976-08-01

    solid dielectric insulations currently used are high-molecular-weight polyethylene (EP) and cross-linked poly- ethylene ( XLPE ). The EP insulation is...rated for 750 C a maximum temperature, and the XLPE insulation is rated for 900C maximum temperature. These insulation materials provide the conductor...The cost of installing PILC with copper conductors is compared to the cost of installing XLPE cable with aluminum conductors in Table 1. The

  6. Increasing the Néel temperature of magnetoelectric chromia for voltage-controlled spintronics

    Science.gov (United States)

    Street, M.; Echtenkamp, W.; Komesu, Takashi; Cao, Shi; Dowben, P. A.; Binek, Ch.

    2014-06-01

    Boron doped chromia (Cr2O3) thin films with substitutional doping levels between zero and 3% are grown using pulsed laser deposition in borane background gases. Magnetometry reveals a tunable increase in the Néel temperature of the (0001) textured Cr2BxO3-x thin films at a rate of about 10% with 1% oxygen site substitution preserving a net boundary magnetization. Spin resolved inverse photoemission measured after magnetoelectric annealing in subsequently reversed electric fields evidences voltage-controlled reversal of boundary magnetization and thus magnetoelectricity of Cr2BxO3-x. Conservation of magnetoelectricity far above room temperature makes ultra-low power voltage-controlled spintronic devices feasible.

  7. A novel low-voltage high precision current reference based on subthreshold MOSFETs

    Institute of Scientific and Technical Information of China (English)

    YU Guo-yi; ZOU Xue-cheng

    2007-01-01

    A novel topology low-voltage high precision current reference based on subthreshold Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) is presented. The circuit achieves a temperature-independent reference current by a proper combination current of two first-order temperature-compensation current References , which exploit the temperature characteristics of integrated poly2 resistors and the Ⅰ- Ⅴ transconductance characteristics of MOSFET operating in the subthreshold region. The circuit, designed with the 1st silicon 0.35 μm standard CMOS logic process technology, exhibits a stable current of about 2.25 μA with much low temperature coefficient of 3 ×10-4 μA/℃ in the temperature range of -40~150 ℃ at 1 V supply voltage, and also achieves a better power supply rejection ratio (PSRR) over a broad frequency. The PSRR is about -78 dB at DC and remains -42dB at the frequency higher than 10 MHz. The maximal process error is about 6.7% based on the Monte Carlo simulation. So it has good process compatibility.

  8. High voltage and high specific capacity dual intercalating electrode Li-ion batteries

    Science.gov (United States)

    West, William C. (Inventor); Blanco, Mario (Inventor)

    2010-01-01

    The present invention provides high capacity and high voltage Li-ion batteries that have a carbonaceous cathode and a nonaqueous electrolyte solution comprising LiF salt and an anion receptor that binds the fluoride ion. The batteries can comprise dual intercalating electrode Li ion batteries. Methods of the present invention use a cathode and electrode pair, wherein each of the electrodes reversibly intercalate ions provided by a LiF salt to make a high voltage and high specific capacity dual intercalating electrode Li-ion battery. The present methods and systems provide high-capacity batteries particularly useful in powering devices where minimizing battery mass is important.

  9. System for improving measurement accuracy of transducer by measuring transducer temperature and resistance change using thermoelectric voltages

    Science.gov (United States)

    Anderson, Karl F. (Inventor); Parker, Allen R., Jr. (Inventor)

    1993-01-01

    A constant current loop measuring system measures a property including the temperature of a sensor responsive to an external condition being measured. The measuring system includes thermocouple conductors connected to the sensor, sensing first and second induced voltages responsive to the external condition. In addition, the measuring system includes a current generator and reverser generating a constant current, and supplying the constant current to the thermocouple conductors in forward and reverse directions generating first and second measured voltages, and a determining unit receiving the first and second measured voltages from the current generator and reverser, and determining the temperature of the sensor responsive to the first and second measured voltages.

  10. Reduced junction temperature control during low-voltage ride-through for single-phase photovoltaic inverters

    DEFF Research Database (Denmark)

    Yang, Yongheng; Wang, Huai; Blaabjerg, Frede

    2014-01-01

    Future photovoltaic (PV) inverters are expected to comply with more stringent grid codes and reliability requirements, especially when a high penetration degree is reached, and also to lower the cost of energy. A junction temperature control concept is proposed in this study for the switching...... devices in a single-phase PV inverter in order to reduce the junction temperature stress, and thus to achieve improved reliability of a PV inverter. The thermal stresses of the switching devices are analysed during low voltage ride-through operation with different levels of reactive power injection......, allowing an optimal design of the proposed control scheme with controlled mean junction temperature and reduced junction temperature swings. The effectiveness of the control method in terms of both thermal performance and electrical performance is validated by the simulations and experiments, respectively...

  11. Porous and mesh alumina formed by anodization of high purity aluminum films at low anodizing voltage

    Energy Technology Data Exchange (ETDEWEB)

    Abd-Elnaiem, Alaa M., E-mail: alaa.abd-elnaiem@science.au.edu.eg [KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Mebed, A.M. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Department of Physics, Faculty of Science, Al-Jouf University, Sakaka 2014 (Saudi Arabia); El-Said, Waleed Ahmed [Department of Chemistry, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Abdel-Rahim, M.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)

    2014-11-03

    Electrochemical oxidation of high-purity aluminum (Al) films under low anodizing voltages (1–10) V has been conducted to obtain anodic aluminum oxide (AAO) with ultra-small pore size and inter-pore distance. Different structures of AAO have been obtained e.g. nanoporous and mesh structures. Highly regular pore arrays with small pore size and inter-pore distance have been formed in oxalic or sulfuric acids at different temperatures (22–50 °C). It is found that the pore diameter, inter-pore distance and the barrier layer thickness are independent of the anodizing parameters, which is very different from the rules of general AAO fabrication. The brand formation mechanism has been revealed by the scanning electron microscope study. Regular nanopores are formed under 10 V at the beginning of the anodization and then serve as a template layer dominating the formation of ultra-small nanopores. Anodization that is performed at voltages less than 5 V leads to mesh structured alumina. In addition, we have introduced a simple one-pot synthesis method to develop thin walls of oxide containing lithium (Li) ions that could be used for battery application based on anodization of Al films in a supersaturated mixture of lithium phosphate and phosphoric acid as matrix for Li-composite electrolyte. - Highlights: • We develop anodic aluminum oxide (AAO) with small pore size and inter-pore distance. • Applying low anodizing voltages onto aluminum film leads to form mesh structures. • The value of anodizing voltage (1–10 V) has no effect on pore size or inter-pore distance. • Applying anodizing voltage less than 5 V leads to mesh structured AAO. • AAO can be used as a matrix for Li-composite electrolytes.

  12. First high-voltage measurements using Ca{sup +} ions at the ALIVE experiment

    Energy Technology Data Exchange (ETDEWEB)

    König, K., E-mail: kkoenig@ikp.tu-darmstadt.de [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Geppert, Ch. [Universität Mainz, Institut für Kernchemie (Germany); Krämer, J.; Maaß, B. [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Otten, E. W. [Universität Mainz, Institut für Physik (Germany); Ratajczyk, T.; Nörtershäuser, W. [Technische Universität Darmstadt, Institut für Kernphysik (Germany)

    2017-11-15

    Many physics experiments depend on accurate high-voltage measurements to determine for example the exact retardation potential of an electron spectrometer as in the KATRIN experiment or the acceleration voltage of the ions at ISOL facilities. Until now only precision high-voltage dividers can be used to measure voltages up to 65 kV with an accuracy of 1 ppm. However, these dividers need frequent calibration and cross-checking and the direct traceability is not given. In this article we will describe the status of an experiment which aims to measure high voltages using collinear laser spectroscopy and which has the potential to provide a high-voltage standard and hence, a calibration source for precision high-voltage dividers on the 1 ppm level.

  13. Low-profile high-voltage compact gas switch

    Energy Technology Data Exchange (ETDEWEB)

    Goerz, D.A.; Wilson, M.J.; Speer, R.D.

    1997-06-30

    This paper discusses the development and testing of a low-profile, high-voltage, spark-gap switch designed to be closely coupled with other components into an integrated high-energy pulsed-power source. The switch is designed to operate at 100 kV using SF6 gas pressurized to less than 0.7 MPa. The volume of the switch cavity region is less than 1.5 cm3, and the field stress along the gas-dielectric interface is as high as 130 kV/cm. The dielectric switch body has a low profile that is only I -cm tall at its greatest extent and nominally 2-mm thick over most of its area. This design achieves a very low inductance of less than 5 nH, but results in field stresses exceeding 500 kV/cm in the dielectric material. Field modeling was done to determine the appropriate shape for the highly stressed insulator and electrodes, and special manufacturing techniques were employed to mitigate the usual mechanisms that induce breakdown and failure in solid dielectrics. Static breakdown tests verified that the switch operates satisfactorily at 100 kV levels. The unit has been characterized with different shaped electrodes having nominal gap spacings of 2.0, 2.5, and 3.0 mm. The relationship between self-break voltage and operating pressure agrees well with published data on gas properties, accounting for the field enhancements of the electrode shapes being used. Capacitor discharge tests in a low inductance test fixture exhibited peak currents up to 25 kA with characteristic frequencies of the ringdown circuit ranging from 10 to 20 MHz. The ringdown waveforms and scaling of measured parameters agree well with circuit modeling of the switch and test fixture. Repetitive operation has been demonstrated at moderate rep-rates up to 15 Hz, limited by the power supply being used. Preliminary tests to evaluate lifetime of the compact switch assembly have been encouraging. In one case, after more than 7,000 high-current ringdown tests with approximately 30 C of total charge transferred, the

  14. High-Voltage-Input Level Translator Using Standard CMOS

    Science.gov (United States)

    Yager, Jeremy A.; Mojarradi, Mohammad M.; Vo, Tuan A.; Blalock, Benjamin J.

    2011-01-01

    proposed integrated circuit would translate (1) a pair of input signals having a low differential potential and a possibly high common-mode potential into (2) a pair of output signals having the same low differential potential and a low common-mode potential. As used here, "low" and "high" refer to potentials that are, respectively, below or above the nominal supply potential (3.3 V) at which standard complementary metal oxide/semiconductor (CMOS) integrated circuits are designed to operate. The input common-mode potential could lie between 0 and 10 V; the output common-mode potential would be 2 V. This translation would make it possible to process the pair of signals by use of standard 3.3-V CMOS analog and/or mixed-signal (analog and digital) circuitry on the same integrated-circuit chip. A schematic of the circuit is shown in the figure. Standard 3.3-V CMOS circuitry cannot withstand input potentials greater than about 4 V. However, there are many applications that involve low-differential-potential, high-common-mode-potential input signal pairs and in which standard 3.3-V CMOS circuitry, which is relatively inexpensive, would be the most appropriate circuitry for performing other functions on the integrated-circuit chip that handles the high-potential input signals. Thus, there is a need to combine high-voltage input circuitry with standard low-voltage CMOS circuitry on the same integrated-circuit chip. The proposed circuit would satisfy this need. In the proposed circuit, the input signals would be coupled into both a level-shifting pair and a common-mode-sensing pair of CMOS transistors. The output of the level-shifting pair would be fed as input to a differential pair of transistors. The resulting differential current output would pass through six standoff transistors to be mirrored into an output branch by four heterojunction bipolar transistors. The mirrored differential current would be converted back to potential by a pair of diode-connected transistors

  15. Design of 154 kV Extra-High-Voltage Prototype SF6 Bushing for Superconducting Electric Power Applications

    Science.gov (United States)

    Koo, Ja-yoon; Seong, Jae-gyu; Hwang, Jae-sang; Lee, Bang-wook; Lee, Sang-hwa

    2012-09-01

    One of the critical components to be developed for high-voltage superconducting devices, such as superconducting transformers, cables, and fault current limiters, is a high-voltage bushing to supply a high current to devices without insulation difficulties in cryogenic environments. Unfortunately, suitable bushings for high-temperature-superconductivity (HTS) equipment have not been fully developed to address cryogenic insulation issues. As a fundamental step towards developing the optimum design of the 154 kV prototype SF6 bushing of HTS devices, the puncture and creepage breakdown voltages of glass-fiber-reinforced-plastic (GFRP) were analyzed with a variety of configurations of electrodes and gap distances in the insulation material. And design factors of high-voltage cryogenic bushings were obtained from the result of tests. Finally, the withstand voltage tests of manufacturing a 154 kV extra-high-voltage (EHV) prototype bushing has been performed. Consequently, we verified the insulation level of the newly designed 154 kV EHV cryogenic prototype bushings for superconducting electric power applications.

  16. Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.

    Science.gov (United States)

    Kim, Wonjae; Riikonen, Juha; Li, Changfeng; Chen, Ya; Lipsanen, Harri

    2013-10-04

    Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low VDD. Controllable characteristics also allow the compensation of variation in the unintentional doping typically observed in CVD graphene. Moreover, both p-n and n-p configurations of FETs can be achieved by electrostatic doping using the local back-gate. Therefore, the device operation can also be switched from inverter to voltage controlled resistor, opening new possibilities in using graphene in logic circuitry.

  17. Review of Adult Electrical Burn Injury Outcomes Worldwide: An Analysis of Low-Voltage vs High-Voltage Electrical Injury.

    Science.gov (United States)

    Shih, Jessica G; Shahrokhi, Shahriar; Jeschke, Marc G

    The aims of this article are to review low-voltage vs high-voltage electrical burn complications in adults and to identify novel areas that are not recognized to improve outcomes. An extensive literature search on electrical burn injuries was performed using OVID MEDLINE, PubMed, and EMBASE databases from 1946 to 2015. Studies relating to outcomes of electrical injury in the adult population (≥18 years of age) were included in the study. Forty-one single-institution publications with a total of 5485 electrical injury patients were identified and included in the present study. Fourty-four percent of these patients were low-voltage injuries (LVIs), 38.3% high-voltage injuries (HVIs), and 43.7% with voltage not otherwise specified. Forty-four percentage of studies did not characterize outcomes according to LHIs vs HVIs. Reported outcomes include surgical, medical, posttraumatic, and others (long-term/psychological/rehabilitative), all of which report greater incidence rates in HVI than in LVI. Only two studies report on psychological outcomes such as posttraumatic stress disorder. Mortality rates from electrical injuries are 2.6% in LVI, 5.2% in HVI, and 3.7% in not otherwise specified. Coroner's reports revealed a ratio of 2.4:1 for deaths caused by LVI compared with HVI. HVIs lead to greater morbidity and mortality than LVIs. However, the results of the coroner's reports suggest that immediate mortality from LVI may be underestimated. Furthermore, on the basis of this analysis, we conclude that the majority of studies report electrical injury outcomes; however, the majority of them do not analyze complications by low vs high voltage and often lack long-term psychological and rehabilitation outcomes after electrical injury indicating that a variety of central aspects are not being evaluated or assessed.

  18. Advances in high temperature chemistry

    CERN Document Server

    Eyring, Leroy

    1969-01-01

    Advances in High Temperature Chemistry, Volume 2 covers the advances in the knowledge of the high temperature behavior of materials and the complex and unfamiliar characteristics of matter at high temperature. The book discusses the dissociation energies and free energy functions of gaseous monoxides; the matrix-isolation technique applied to high temperature molecules; and the main features, the techniques for the production, detection, and diagnosis, and the applications of molecular beams in high temperatures. The text also describes the chemical research in streaming thermal plasmas, as w

  19. Ultra-High Temperature Gratings

    Institute of Scientific and Technical Information of China (English)

    John Canning; Somnath Bandyopadhyay; Michael Stevenson; Kevin Cook

    2008-01-01

    Regenerated gratings seeded by type-Ⅰ gratings are shown to withstand temperatures beyond 1000 ℃. The method of regeneration offers a new approach to increasing temperature resistance of stable fibre Bragg and other gratings. These ultra-high temperature (UHT) gratings extend the applicability of silicate based components to high temperature applications such as monitoring of smelters and vehicle and aircraft engines to high power fibre lasers.

  20. High temperature nanoplasmonics

    Science.gov (United States)

    Alabastri, Alessandro; Toma, Andrea; Malerba, Mario; De Angelis, Francesco; Proietti Zaccaria, Remo

    2016-09-01

    Metallic nanostructures can be utilized as heat nano-sources which can find application in different areas such as photocatalysis, nanochemistry or sensor devices. Here we show how the optical response of plasmonic structures is affected by the increase of temperature. In particular we apply a temperature dependent dielectric function model to different nanoparticles finding that the optical responses are strongly dependent on shape and aspect-ratio. The idea is that when metallic structures interact with an electromagnetic field they heat up due to Joule effect. The corresponding temperature increase modifies the optical response of the particle and thus the heating process. The key finding is that, depending on the structures geometry, absorption efficiency can either increase or decrease with temperature. Since absorption relates to thermal energy dissipation and thus to temperature increase, the mechanism leads to positive or negative loops. Consequently, not only an error would be made by neglecting temperature but it would be not even possible to know, a priori, if the error is towards higher or lower values.

  1. Degradation of Photovoltaic Modules Under High Voltage Stress in the Field: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    del Cueto, J. A.; Rummel, S. R.

    2010-08-01

    The degradation in performance for eight photovoltaic (PV) modules stressed at high voltage (HV) is presented. Four types of modules--tandem-junction and triple-junction amorphous thin-film silicon, plus crystalline and polycrystalline silicon modules--were tested, with a pair of each biased at opposite polarities. They were deployed outdoors between 2001 and 2009 with their respective HV leakage currents through the module encapsulation continuously monitored with a data acquisition system, along with air temperature and relative humidity. For the first 5 years, all modules were biased continuously at fixed 600 VDC, day and night. In the last 2 years, the modules were step-bias stressed cyclically up and down in voltage between 10 and 600 VDC, in steps of tens to hundreds of volts. This allowed characterization of leakage current versus voltage under a large range of temperature and moisture conditions, facilitating determination of leakage paths. An analysis of the degradation is presented, along with integrated leakage charge. In HV operation: the bulk silicon modules degraded either insignificantly or at rates of 0.1%/yr higher than modules not biased at HV; for the thin-film silicon modules, the added loss rates are insignificant for one type, or 0.2%/yr-0.6%/yr larger for the other type.

  2. Advances in high voltage insulation and arc interruption in SF6 and vacuum

    CERN Document Server

    Maller, V N

    1982-01-01

    Advances in High Voltage Insulation and Arc Interruption in SF6 and Vacuum deals with high voltage breakdown and arc extinction in sulfur hexafluoride (SF6) and high vacuum, with special emphasis on the application of these insulating media in high voltage power apparatus and devices. The design and developmental aspects of various high voltage power apparatus using SF6 and high vacuum are highlighted. This book is comprised of eight chapters and opens with a discussion on electrical discharges in SF6 and high vacuum, along with the properties and handling of SF6 gas. The following chapters fo

  3. Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

    Energy Technology Data Exchange (ETDEWEB)

    She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui; Zhang, Di; Sommerer, Timothy John; Bray, James William

    2016-12-13

    A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of the one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.

  4. Influence of carrier flow on the temperature-dependent capacitance-voltage profiles of heterojunction structures

    Science.gov (United States)

    Kwon, S. D.; Lim, H.; Shin, H. K.; Choe, Byung-Doo

    1996-10-01

    We suggest a model which can explain the shifting of carrier concentration peaks in the temperature-dependent capacitance-voltage carrier profiles of heterojunction (HJ) structures. The shift of concentration peaks, which was frequently observed in the inverted isotype HJs was previously attributed to the traps at the heterointerface. The main feature of our model is the role of band offset as a limiter to the test signal current. The model can explain the difference of the peak shift in the carrier profiles of the normal and inverted type HJs. According to this model, the peak shifts at low temperatures occur naturally for the inverted type HJs.

  5. The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

    Directory of Open Access Journals (Sweden)

    Donghua Liu

    2015-01-01

    Full Text Available This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD improved by field plate technology. Effect of metal field plate (MFP and polysilicon field plate (PFP on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp = 7.88 ohm * mm2 are achieved.

  6. High-Temperature Piezoelectric Sensing

    Directory of Open Access Journals (Sweden)

    Xiaoning Jiang

    2013-12-01

    Full Text Available Piezoelectric sensing is of increasing interest for high-temperature applications in aerospace, automotive, power plants and material processing due to its low cost, compact sensor size and simple signal conditioning, in comparison with other high-temperature sensing techniques. This paper presented an overview of high-temperature piezoelectric sensing techniques. Firstly, different types of high-temperature piezoelectric single crystals, electrode materials, and their pros and cons are discussed. Secondly, recent work on high-temperature piezoelectric sensors including accelerometer, surface acoustic wave sensor, ultrasound transducer, acoustic emission sensor, gas sensor, and pressure sensor for temperatures up to 1,250 °C were reviewed. Finally, discussions of existing challenges and future work for high-temperature piezoelectric sensing are presented.

  7. Design of a high frequency low voltage CMOS operational amplifier

    Directory of Open Access Journals (Sweden)

    Priyanka Kakoty

    2011-03-01

    Full Text Available A method is presented in this paper for the design of a high frequency CMOS operational amplifier (Op-Amp which operates at 3V power supply using tsmc 0.18 micron CMOS technology. The OPAMPdesigned is a two-stage CMOS OPAMP followed by an output buffer. This Operational Transconductance Amplifier (OTA employs a Miller capacitor and is compensated with a current buffer compensation technique. The unique behaviour of the MOS transistors in saturation region not only allows a designer to work at a low voltage, but also at a high frequency. Designing of two-stage op-ampsis a multi-dimensional-optimization problem where optimization of one or more parameters may easily result into degradation of others. The OPAMP is designed to exhibit a unity gain frequency of 2.02GHzand exhibits a gain of 49.02dB with a 60.50 phase margin. As compared to the conventional approach, the proposed compensation method results in a higher unity gain frequency under the same load condition.Design has been carried out in Tanner tools. Simulation results are verified using S-edit and W-edit.

  8. Design of a high frequency low voltage CMOS operational amplifier

    Directory of Open Access Journals (Sweden)

    Priyanka Kakoty

    2011-03-01

    Full Text Available A method is presented in this paper for the design of a high frequency CMOS operational amplifier (Op-Amp which operates at 3V power supply using tsmc 0.18 micron CMOS technology. The OPAMPdesigned is a two-stage CMOS OPAMP followed by an output buffer. This OperationalTransconductance Amplifier (OTA employs a Miller capacitor and is compensated with a current buffercompensation technique. The unique behaviour of the MOS transistors in saturation region not onlyallows a designer to work at a low voltage, but also at a high frequency. Designing of two-stage op-ampsis a multi-dimensional-optimization problem where optimization of one or more parameters may easilyresult into degradation of others. The OPAMP is designed to exhibit a unity gain frequency of 2.02GHzand exhibits a gain of 49.02dB with a 60.50 phase margin. As compared to the conventional approach, theproposed compensation method results in a higher unity gain frequency under the same load condition.Design has been carried out in Tanner tools. Simulation results are verified using S-edit and W-edit.

  9. Note: Complementary metal-oxide-semiconductor high voltage pulse generation circuits.

    Science.gov (United States)

    Sun, Jiwei; Wang, Pingshan

    2013-10-01

    We present two types of on-chip pulse generation circuits. The first is based on CMOS pulse-forming-lines (PFLs). It includes a four-stage charge pump, a four-stacked-MOSFET switch and a 5 mm long PFL. The circuit is implemented in a 0.13 μm CMOS process. Pulses of ~1.8 V amplitude with ~135 ps duration on a 50 Ω load are obtained. The obtained voltage is higher than 1.6 V, the rated operating voltage of the process. The second is a high-voltage Marx generator which also uses stacked MOSFETs as high voltage switches. The output voltage is 11.68 V, which is higher than the highest breakdown voltage (~10 V) of the CMOS process. These results significantly extend high-voltage pulse generation capabilities of CMOS technologies.

  10. High temperature superconductor accelerator magnets

    NARCIS (Netherlands)

    van Nugteren, J.

    2016-01-01

    For future particle accelerators bending dipoles are considered with magnetic fields exceeding 20T. This can only be achieved using high temperature superconductors (HTS). These exhibit different properties from classical low temperature superconductors and still require significant research and dev

  11. A Four-Phase High Voltage Conversion Ratio Bidirectional DC-DC Converter for Battery Applications

    Directory of Open Access Journals (Sweden)

    Li-Kun Xue

    2015-06-01

    Full Text Available This study presents a four-phase interleaved high voltage conversion ratio bidirectional DC-DC converter circuit based on coupled inductors and switched capacitors, which can eliminate the defects of conventional high voltage conversion ratio bidirectional DC-DC converters in terms of high-voltage/current stress, less efficiency and low-power limitation. Parallel channels are used to reduce current stress at the low-voltage side and series connected switched capacitors are used to enlarge voltage conversion ratio, reduce voltage stress and achieve auto current sharing. This paper proposes the operation principle, feature analysis and optimization design considerations. On this basis the objectives of high voltage conversion ratio, low voltage/current stress, high power density, high efficiency and high-power applications can be achieved. Some experimental results based on a 500 W prototype converter (24 V to 48 V at low-voltage side, 400 V at high-voltage side are given to verify the theoretical analysis and the effectiveness of the proposed converter.

  12. A 600kV 15mA Cockcroft-Walton high-voltage power supply with high stability and low-ripple voltage

    Energy Technology Data Exchange (ETDEWEB)

    Su Tongling [Department of Modern Physics, Lanzhou University, Lanzhou 730000 (China); Zhang Yimin [Department of Modern Physics, Lanzhou University, Lanzhou 730000 (China)]. E-mail: zhangyim03@st.lzu.edu.cn; Chen Shangwen [Department of Modern Physics, Lanzhou University, Lanzhou 730000 (China); Liu Yantong [Department of Modern Physics, Lanzhou University, Lanzhou 730000 (China); Lv Huiyi [Department of Modern Physics, Lanzhou University, Lanzhou 730000 (China); Liu Jiangtao [Department of Modern Physics, Lanzhou University, Lanzhou 730000 (China)

    2006-05-10

    A Cockcroft-Walton high-voltage power supply with high stability and low-ripple voltage has been developed. This power supply has been operated in a ns pulse neutron generator. The maximum non-load voltage is 600kV while the working voltage and load current are 550kV and 15mA, respectively. The tested results indicate that when the power supply is operated at 300kV, 6.7mA and the input voltage varies +/-10%, the long-term stability of the output voltage is S=(0.300-1.006)x10{sup -3}. The ripple voltage is {delta}U{sub P-P}=6.2V at 300kV, 6.8-8.3mA and the ratio of {delta}U{sub P-P} to the output voltage V{sub H} is {delta}U{sub P-P}/V{sub H}=2.1x10{sup -5}.

  13. Synthesis gas regeneration electrotechnology using volume high-voltage pulsed discharges: corona and barrier ones

    Directory of Open Access Journals (Sweden)

    M.I. Boyko

    2014-09-01

    Full Text Available Factory testing of a created high-voltage complex (plant has been conducted. The complex consists of two pulse generators with the repetition rate of up to 50,000 pulses per second and load reactors with pulsed discharges - corona and barrier ones. Transistor (IGBT keys are used as energy switches. The efficient mode of coke gas methane conversion (steam reforming to syngas has been obtained with application of the complex created. A unidirectional action of the pulsed discharges, the gas mixture temperature, and a nickel catalyst has reduced the specific energy consumption for synthesis gas regeneration during the conversion. A feasible mechanism of this conversion is described.

  14. BEHAVIOUR OF BACKFILL MATERIALS FOR ELECTRICAL GROUNDING SYSTEMS UNDER HIGH VOLTAGE CONDITIONS

    Directory of Open Access Journals (Sweden)

    S. C. LIM

    2015-06-01

    Full Text Available Backfill materials like Bentonite and cement are effective in lowering grounding resistance of electrodes for a considerable period. During lightning, switching impulses and earth fault occurrences in medium and high voltage networks, the grounding system needs to handle extremely high currents either for a short duration or prolonged period respectively. This paper investigates the behaviour of bentonite, cement and sand under impulse and alternating high voltage (50Hz conditions. Fulguritic-formation was observed in all materials under alternating high voltage. The findings reveal that performance of grounding systems under high voltage conditions may significantly change from the outcomes anticipated at design stage.

  15. Negative Bias Temperature Instability "Recovery" under Negative Stress Voltage with Different Oxide Thicknesses

    Institute of Scientific and Technical Information of China (English)

    CAO Yan-Rong; MA Xiao-Hua; HAO Yue; ZHU Min-Bo; TIAN Wen-Chao; ZHANG Yue

    2011-01-01

    Different phenomena are observed under negative gate voltage stress which is smaller than the previous degradation stress in PMOSFETs with different oxide thicknesses. We adopt the real time method to make a point of the drain current to study the degradation and recovery of negative bias temperature instability (NBTI). For the device with thin oxide, recovery phenomenon appears when smaller negative voltage stress was applied, due to the more influencing oxide charges detrapping effects than the interface states. For the device with thick oxide, not recovery but degradation phenomenon comes forth. As many charges are trapped in the deeper position and higher energy level in the oxide, these charges can not be detrapped. Therefore, the effect of the charge detrapping is smaller than that of the interface states in the thick oxide. The degradation presents itself during the 'recovery' time.

  16. SOFT-SWITCHED HIGH STEP-UP DC-DC CONVERTER WITH HIGH VOLTAGE GAIN

    Directory of Open Access Journals (Sweden)

    J.C. PAUL IMMANUEL

    2013-04-01

    Full Text Available This paper presents a new design of soft switched high step-up dc-dc converter with high voltage gain which is suitable for high power applications such as Uninterruptible Power System (UPS, Photo Voltaic system and hybrid electric vehicles. The emergence of this front-end converter is to improve the shape of active input current given to the system. This converter proposes Soft-Switching technique to achieve ZVS turn on of active switches and ZCS turn off of diodes using Lr - Cr resonance in the auxiliary circuit. Therefore reduces the switching losses. Comparatively the voltage conversion ratio of this converter is higher when compared with the ordinary boost converter. Hence the voltage gain of this converter is also higher. A simulation platform is created using MATLAB which illustrates the ZVS and ZCS operation of the switches and diodes. Open loop and closed loop controlled converter systems are modelled and simulated.

  17. A parameter-free method to extract the superconductor’s J c(B,θ) field-dependence from in-field current-voltage characteristics of high temperature superconductor tapes

    Science.gov (United States)

    Zermeño, Víctor M. R.; Habelok, Krzysztof; Stępień, Mariusz; Grilli, Francesco

    2017-03-01

    The estimation of the critical current (I c) and AC losses of high-temperature superconductor devices through modeling and simulation requires the knowledge of the critical current density (J c) of the superconducting material. This J c is in general not constant and depends both on the magnitude (B loc) and the direction (θ, relative to the tape) of the local magnetic flux density. In principle, J c(B loc,θ) can be obtained from the experimentally measured critical current I c(B a,θ), where B a is the magnitude of the applied magnetic field. However, for applications where the superconducting materials experience a local field that is close to the self-field of an isolated conductor, obtaining J c(B loc,θ) from I c(B a,θ) is not a trivial task. It is necessary to solve an inverse problem to correct for the contribution derived from the self-field. The methods presented in the literature comprise a series of approaches dealing with different degrees of mathematical regularization to fit the parameters of preconceived nonlinear formulas by means of brute force or optimization methods. In this contribution, we present a parameter-free method that provides excellent reproduction of experimental data and requires no human interaction or preconception of the J c dependence with respect to the magnetic field. In particular, it allows going from the experimental data to a ready-to-run J c(B loc,θ) model in a few minutes.

  18. An Underappreciated Radiation Hazard from High Voltage Electrodes in Vacuum

    CERN Document Server

    West, Adam; DeMille, David; West, Elizabeth; Panda, Cristian; Doyle, John; Gabrielse, Gerald; Kryskow, Adam; Mitchell, Corinne

    2016-01-01

    The use of high voltage (HV) electrodes in vacuum is commonplace in physics laboratories. In such systems, it has long been known that electron emission from an HV cathode can lead to bremsstrahlung X-rays; indeed, this is the basic principle behind the operation of standard X-ray sources. However, in laboratory setups where X-ray production is not the goal and no electron source is deliberately introduced, field-emitted electrons accelerated by HV can produce X-rays as an unintended hazardous byproduct. Both the level of hazard and the safe operating regimes for HV vacuum electrode systems are not widely appreciated, at least in university laboratories. A reinforced awareness of the radiation hazards associated with vacuum HV setups would be beneficial. We present a case study of a HV vacuum electrode device operated in a university atomic physics laboratory. We describe the characterisation of the observed X-ray radiation, its relation to the observed leakage current in the device, the steps taken to contai...

  19. An Underappreciated Radiation Hazard from High Voltage Electrodes in Vacuum.

    Science.gov (United States)

    West, Adam D; Lasner, Zack; DeMille, David; West, Elizabeth P; Panda, Cristian D; Doyle, John M; Gabrielse, Gerald; Kryskow, Adam; Mitchell, Corinne

    2017-01-01

    The use of high voltage (HV) electrodes in vacuum is commonplace in physics laboratories. In such systems, it has long been known that electron emission from an HV cathode can lead to bremsstrahlung x rays; indeed, this is the basic principle behind the operation of standard x-ray sources. However, in laboratory setups where x-ray production is not the goal and no electron source is deliberately introduced, field-emitted electrons accelerated by HV can produce x rays as an unintended hazardous byproduct. Both the level of hazard and the safe operating regimes for HV vacuum electrode systems are not widely appreciated, at least in university laboratories. A reinforced awareness of the radiation hazards associated with vacuum HV setups would be beneficial. The authors present a case study of a HV vacuum electrode device operated in a university atomic physics laboratory. They describe the characterization of the observed x-ray radiation, its relation to the observed leakage current in the device, the steps taken to contain and mitigate the radiation hazard, and suggested safety guidelines.

  20. A new aluminium-ion battery with high voltage, high safety and low cost.

    Science.gov (United States)

    Sun, Haobo; Wang, Wei; Yu, Zhijing; Yuan, Yan; Wang, Shuai; Jiao, Shuqiang

    2015-07-28

    A new kind of Al-ion battery with carbon paper as the cathode, high-purity Al foil as the anode and ionic liquid as the electrolyte is proposed in this work. The significance of the presented battery is going to be an extremely high average voltage plateau of ca. 1.8 V vs. Al(3+)/Al.

  1. High Bandwidth Zero Voltage Injection Method for Sensorless Control of PMSM

    DEFF Research Database (Denmark)

    Ge, Xie; Lu, Kaiyuan; Kumar, Dwivedi Sanjeet

    2014-01-01

    High frequency signal injection is widely used in PMSM sensorless control system for low speed operations. The conventional voltage injection method often needs filters to obtain particular harmonic component in order to estimate the rotor position; or it requires several voltage pulses to be inj...... in a fast current regulation performance. Injection of zero voltage also minimizes the inverter voltage error effects caused by the dead-time.......High frequency signal injection is widely used in PMSM sensorless control system for low speed operations. The conventional voltage injection method often needs filters to obtain particular harmonic component in order to estimate the rotor position; or it requires several voltage pulses...... to be injected before the position may be estimated. In this paper, a single pulse zero voltage injection method is proposed. The rotor position is directly estimated from the current ripple at half of the switching frequency. No machine parameters are needed and using of filters is avoided. This results...

  2. The effect of the dc bias voltage on the x-ray bremsstrahlung and beam intensities of medium and highly charged ions of argon.

    Science.gov (United States)

    Rodrigues, G; Lakshmy, P S; Baskaran, R; Kanjilal, D; Roy, A

    2010-02-01

    X-ray bremsstrahlung measurements from the 18 GHz High Temperature Superconducting Electron Cyclotron Resonance Ion Source, Pantechnik-Delhi Ion Source were measured as a function of negative dc bias voltage, keeping all other source operating parameters fixed and the extraction voltage in the off condition. The optimization of medium and highly charged ions of argon with similar source operating parameters is described. It is observed that the high temperature component of the electron is altered significantly with the help of bias voltage, and the electron population has to be maximized for obtaining higher current.

  3. [Transient high frequency nodal rhythm after a high voltage electric shock. Report of one case].

    Science.gov (United States)

    Supervía, August; Del Baño, Francisco; Aguirre, Alfons; Membrilla, Estela

    2013-09-01

    Electrical shock can cause a direct myocardial damage and different types of arrhythmias, which are uncommon and occur more often when there is a high voltage exposure. We report a 19-year-old male that received a high voltage shock, falling thereafter from an altitude of four meters. On admission to the emergency room, he had second and third degree burns in the right hand and the left thigh. The electrocardiogram showed a nodal rhythm of 72 beats per minute. After four hours of monitoring, sinus rhythm returned spontaneously.

  4. High temperature materials; Materiaux a hautes temperatures

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2003-07-01

    The aim of this workshop is to share the needs of high temperature and nuclear fuel materials for future nuclear systems, to take stock of the status of researches in this domain and to propose some cooperation works between the different research organisations. The future nuclear systems are the very high temperature (850 to 1200 deg. C) gas cooled reactors (GCR) and the molten salt reactors (MSR). These systems include not only the reactor but also the fabrication and reprocessing of the spent fuel. This document brings together the transparencies of 13 communications among the 25 given at the workshop: 1) characteristics and needs of future systems: specifications, materials and fuel needs for fast spectrum GCR and very high temperature GCR; 2) high temperature materials out of neutron flux: thermal barriers: materials, resistance, lifetimes; nickel-base metal alloys: status of knowledge, mechanical behaviour, possible applications; corrosion linked with the gas coolant: knowledge and problems to be solved; super-alloys for turbines: alloys for blades and discs; corrosion linked with MSR: knowledge and problems to be solved; 3) materials for reactor core structure: nuclear graphite and carbon; fuel assembly structure materials of the GCR with fast neutron spectrum: status of knowledge and ceramics and cermets needs; silicon carbide as fuel confinement material, study of irradiation induced defects; migration of fission products, I and Cs in SiC; 4) materials for hydrogen production: status of the knowledge and needs for the thermochemical cycle; 5) technologies: GCR components and the associated material needs: compact exchangers, pumps, turbines; MSR components: valves, exchangers, pumps. (J.S.)

  5. Design of a high voltage stimulator chip for a stroke rehabilitation system.

    Science.gov (United States)

    Zeng, Lei; Yi, Xin; Lu, Sheng; Lou, Yuan; Jiang, Jianfei; Qu, Hongen; Lan, Ning; Wang, Guoxing

    2013-01-01

    This paper describes the design of an 8-channel high voltage stimulator chip for rehabilitation of stroke patients through surface stimulation, which requires high stimulation currents and high compliance voltage. The chip gets stimulation control data through its Serial Peripheral Interface (SPI), and can accordingly generate biphasic stimulation currents with different amplitudes, duration, frequencies and polarities independently for each channel. The current driver is implemented with thick oxide devices with a supply voltage up to 90V. The chip is designed in a 0.35εm X-FAB high voltage process.

  6. Development of high-voltage pulse generator with variable amplitude and duration

    Science.gov (United States)

    Upadhyay, J.; Sharma, M. L.; Ahuja, Aakash B.; Navathe, C. P.

    2014-06-01

    A high voltage pulse generator with variable amplitude (100-3000 V) and duration (100-2000 μs) has been designed and developed. The variable duration pulse has been generated by adopting a simple and novel technique of varying the turn off delay time of a high voltage Metal Oxide Semiconductor Field Effect Transistor (MOSFET) based switch by varying external gate resistance. The pulse amplitude is made variable by adjusting biasing supply of the high voltage switch. The high voltage switch has been developed using a MOSFET based stack of 3 kV rating with switching time of 7 ns.

  7. Installation and cosmic ray test of the high voltage system of the BESⅢdrift chamber

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    After examination of the designed high voltage power supply system of the BESⅢ drift chamber in the beam test of the full length prototype of drift chamber,a full system covering all the channels of high voltage was installed.The system's training and the high voltage value adjustment were carried out in the cosmic ray test of the BESⅢ drift chamber.The cosmic ray test for the full system and its final installation on the BESⅢ drift chamber were reported.The full system of high voltage power supply works stably and reliably.

  8. High Temperature Superconductor Machine Prototype

    DEFF Research Database (Denmark)

    Mijatovic, Nenad; Jensen, Bogi Bech; Træholt, Chresten

    2011-01-01

    A versatile testing platform for a High Temperature Superconductor (HTS) machine has been constructed. The stationary HTS field winding can carry up to 10 coils and it is operated at a temperature of 77K. The rotating armature is at room temperature. Test results and performance for the HTS field...

  9. Performance and Environmental Test Results of the High Voltage Hall Accelerator Engineering Development Unit

    Science.gov (United States)

    Kamhawi, Hani; Haag, Thomas; Huang, Wensheng; Shastry, Rohit; Pinero, Luis; Peterson, Todd; Mathers, Alex

    2012-01-01

    NASA Science Mission Directorate's In-Space Propulsion Technology Program is sponsoring the development of a 3.5 kW-class engineering development unit Hall thruster for implementation in NASA science and exploration missions. NASA Glenn and Aerojet are developing a high fidelity high voltage Hall accelerator that can achieve specific impulse magnitudes greater than 2,700 seconds and xenon throughput capability in excess of 300 kilograms. Performance, plume mappings, thermal characterization, and vibration tests of the high voltage Hall accelerator engineering development unit have been performed. Performance test results indicated that at 3.9 kW the thruster achieved a total thrust efficiency and specific impulse of 58%, and 2,700 sec, respectively. Thermal characterization tests indicated that the thruster component temperatures were within the prescribed material maximum operating temperature limits during full power thruster operation. Finally, thruster vibration tests indicated that the thruster survived the 3-axes qualification full-level random vibration test series. Pre and post-vibration test performance mappings indicated almost identical thruster performance. Finally, an update on the development progress of a power processing unit and a xenon feed system is provided.

  10. 高压输电线路巡线机器人行走电机温度检测系统的研究%High voltage transmission line inspection robot walking motor temperature detection system

    Institute of Scientific and Technical Information of China (English)

    占必红; 麦晓明; 吴功平; 王珂; 杨智勇; 彭向阳

    2015-01-01

    This paper analyzes the necessity of transmission line robot walking motor temperature real-time detection from both motor and encoder performances.A brushed DC motor heating model and a heat transfer model are proposed to calculate the temperature difference of the motor winding and the external environment successfully.It describes the measurement and control system of inspection robot motor temperature and mounting structure of the temperature sensor.Using the temperature sensor for temperature detection and the human-computer interaction platform with a ground station is used to real-time display walking motor temperature in the live running process.Temperature preset value are set in the robot control program.Compared with preset temperature limit,robot will stop the ongoing movement when the measured temperature value is higher than the upper limit value,or else the robot will continue to run.Thus,the robot can achieve intelligent control.Meanwhile,a linear regression model of temperature sensor is built based on Gaussian-Markov assumption,and based on the assumption to dopt the method of least squares method to effective correct the temperature of measurement.%从电机性能和编码器性能两方面分析了对巡线机器人行走电机温度进行实时检测的必要性.提出了一种有刷直流电机发热模型及传热模型,并通过模型成功计算出电机绕组与外界环境的温度差值.介绍了巡线机器人行走电机温度的检测控制系统及温度传感器的安装结构.采用温度传感器DS18 B20进行温度检测,用地面基站人机交互平台实时显示机器人现场运行过程中行走电机温度.在机器人控制程序中设定温度预设值,将所测得温度值与预设温度上限值进行比较,当所测得温度值高于上限值时,机器人将停止正在进行的运动,直至所测得温度低于预设值.以此实现机器人的智能控制.同时,基于高斯-马尔科夫的假设建立了温度传

  11. A High Voltage High Frequency Resonant Inverter for Supplying DBD Devices with Short Discharge Current Pulses

    OpenAIRE

    Bonnin, Xavier; Brandelero, Julio; Videau, Nicolas; Piquet, Hubert; Meynard, Thierry

    2014-01-01

    International audience; In this paper, the merits of a high-frequency resonant converter for supplying dielectric barrier discharges (DBD) devices are established. It is shown that, thanks to its high-frequency operating condition, such a converter allows to supply DBD devices with short discharge current pulses, a high repetition rate, and to control the injected power. In addition, such a topology eliminates the matter of connecting a high-voltage transformer directly across the DBD device ...

  12. Variable Temperature Current-Voltage Measurements of CdTe Solar Cells

    Science.gov (United States)

    Smith, A. D.

    2000-03-01

    We have used a 2" x 2" Peltier heat pump chip powered with 24 V from a computer power supply to build a variable temperature stage for current voltage measurements of solar cells. A voltage divider was used to achieve several different set point temperatures from 25 oC to -24 oC. This system was used with a halogen lamp to study the electrical performance of polycrystalline thin-film solar cells fabricated in our group. These cells have the superstrate structure glass/SnO2:F/CdS/CdTe/metal.(1) The I-V characteristic shows evidence of a blocking back-diode which sets in below room temperature. This behavior will be related to the diffusion into the CdTe of the metals used for our back contact.(2) 1. M. Shao, A. Fischer, D. Grecu, U. Jayamaha, E. Bykov, G. Contreras-Puente, R.G. Bohn, and A.D. Compaan, Appl. Phys. Lett. 69, 3045-3047 (1996). 2. D. Grecu and A.D. Compaan, Appl. Phys. Lett. 75, 361-363 (1999).

  13. High-Mixed-Voltage Analog and RF Circuit Techniques for Nanoscale CMOS

    CERN Document Server

    Mak, Pui-In

    2012-01-01

    This book presents high-/mixed-voltage analog and radio frequency (RF) circuit techniques for developing low-cost multistandard wireless receivers in nm-length CMOS processes.  Key benefits of high-/mixed-voltage RF and analog CMOS circuits are explained, state-of-the-art examples are studied, and circuit solutions before and after voltage-conscious design are compared. Three real design examples are included, which demonstrate the feasibility of high-/mixed-voltage circuit techniques.    Provides a valuable summary and real case studies of the state-of-the-art in high-/mixed-voltage circuits and systems; Includes novel high-/mixed-voltage analog and RF circuit techniques – from concept to practice; Describes the first high-voltage-enabled mobile-TVRF front-end in 90nm CMOS and the first mixed-voltage full-band mobile-TV Receiver in 65nm CMOS; Demonstrates the feasibility of high-/mixed-voltage circuit techniques with real design examples.  

  14. Capacitance of High-Voltage Coaxial Cable in Plasma Immersion Ion Implantation

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Plasma immersion ion implantation (PIII) is an excellent technique for the surface modification of complex-shaped components. Owing to pulsed operation mode of the high voltage and large slew rate, the capacitance on the high-voltage coaxial cable can be detrimental to the processand cannot be ignored. In fact, a significant portion of the rise-time/fall-time of the implantation voltage pulse and big initial current can be attributed to the coaxial cable.

  15. High-voltage breakdown studies on Si microstrip detectors

    CERN Document Server

    Albergo, S; Azzi, P; Babucci, E; Bacchetta, N; Bader, A J; Bagliesi, G; Basti, A; Biggeri, U; Bilei, G M; Bisello, D; Boemi, D; Bosi, F; Borrello, L; Bozzi, C; Braibant, S; Breuker, Horst; Bruzzi, Mara; Buffini, A; Busoni, S; Calefato, G; Candelori, A; Caner, A; Castaldi, R; Castro, A; Catacchini, E; Checcucci, B; Ciampolini, P; Civinini, C; Creanza, D; D'Alessandro, R; Da Rold, M; Demaria, N; De Palma, M; Dell'Orso, R; Marina, R D; Dutta, S; Eklund, C; Peisert, Anna; Feld, L; Fiore, L; Focardi, E; French, M; Freudenreich, Klaus; Fürtjes, A; Giassi, A; Giorgi, M A; Giraldo, A; Glessing, B; Gu, W H; Hall, G; Hammarström, R; Hebbeker, T; Hrubec, Josef; Muhtinen, M; Kaminski, A; Karimäki, V; Saint-Koenig, M; Krammer, Manfred; Lariccia, P; Lenzi, M; Loreti, M; Lübelsmeyer, K; Lustermann, W; Mättig, P; Maggi, G; Mannelli, M; Mantovani, G C; Marchioro, A; Mariotti, C; Martignon, G; McEvoy, B; Meschini, M; Messineo, A; My, S; Paccagnella, A; Palla, Fabrizio; Pandoulas, D; Papi, A; Parrini, G; Passeri, D; Pieri, M; Piperov, S; Potenza, R; Radicci, V; Raffaelli, F; Raymond, M; Santocchia, A; Schmitt, B; Selvaggi, G; Servoli, L; Sguazzoni, G; Siedling, R; Silvestris, L; Skog, K; Starodumov, Andrei; Stavitski, I; Stefanini, G; Tempesta, P; Tonelli, G; Tricomi, A; Tuuva, T; Vannini, C; Verdini, P G; Viertel, Gert M; Zie, Z; Li Ya Hong; Watts, S; Wittmer, B

    1999-01-01

    The breakdown performance of CMS barrel module prototype detectors and test devices with single and multi-guard structures were studied before and after neutron irradiation up to 2-10/sup 14/ 1 MeV equivalent neutrons. Before irradiation avalanche breakdown occurred at the guard ring implant edges. We measured 100-300 V higher breakdown voltage values for the devices with multi-guard than for devices with single-guard ring, After irradiation and type inversion the breakdown was smoother than before irradiation and the breakdown voltage value increased to 500-600 V for most of the devices. (9 refs).

  16. High Temperature Electrostrictive Ceramics Project

    Data.gov (United States)

    National Aeronautics and Space Administration — TRS Technologies proposes to develop high temperature electrostrictors from bismuth-based ferroelectrics. These materials will exhibit high strain and low loss in...

  17. CFD Simulation of Transonic Flow in High-Voltage Circuit Breaker

    Directory of Open Access Journals (Sweden)

    Xiangyang Ye

    2012-01-01

    Full Text Available A high-voltage circuit breaker is an indispensable piece of equipment in the electric transmission and distribution systems. Transonic flow typically occurs inside breaking chamber during the current interruption, which determines the insulating characteristics of gas. Therefore, accurate compressible flow simulations are required to improve the prediction of the breakdown voltages in various test duties of high-voltage circuit breakers. In this work, investigation of the impact of the solvers on the prediction capability of the breakdown voltages in capacitive switching is presented. For this purpose, a number of compressible nozzle flow validation cases have been presented. The investigation is then further extended for a real high-voltage circuit breaker geometry. The correlation between the flow prediction accuracy and the breakdown voltage prediction capability is identified.

  18. High precision, low disturbance calibration of the High Voltage system of the CMS Barrel Electromagnetic Calorimeter

    CERN Document Server

    Fasanella, Giuseppe

    2016-01-01

    The CMS Electromagnetic Calorimeter utilizes scintillating lead tungstate crystals, with avalanche photodiodes (APD) as photo-detectors in the barrel part. 1224 HV channels bias groups of 50 APD pairs, each at a voltage of about 380 V. The APD gain dependence on the voltage is 3pct/V. A stability of better than 60 mV is needed to have negligible impact on the calorimeter energy resolution. Until 2015 manual calibrations were performed yearly. A new calibration system was deployed recently, which satisfies the requirement of low disturbance and high precision. The system is discussed in detail and first operational experience is presented.

  19. High precision, low disturbance calibration system for the CMS Barrel Electromagnetic Calorimeter High Voltage apparatus

    Science.gov (United States)

    Fasanella, G.

    2017-01-01

    The CMS Electromagnetic Calorimeter utilizes scintillation lead tungstate crystals, with avalanche photodiodes (APD) as photo-detectors in the barrel part. 1224 HV channels bias groups of 50 APD pairs, each at a voltage of about 380 V. The APD gain dependence on the voltage is 3%/V. A stability of better than 60 mV is needed to have negligible impact on the calorimeter energy resolution. Until 2015 manual calibrations were performed yearly. A new calibration system was deployed recently, which satisfies the requirement of low disturbance and high precision. The system is discussed in detail and first operational experience is presented.

  20. Investigating Enhancement Mode Gallium Nitride Power FETs in High Voltage, High Frequency Soft Switching Converters

    DEFF Research Database (Denmark)

    Nour, Yasser; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    An increased attention has been detected to develop smaller and lighter high voltage power converters in the range of 50V to 400V domain. The main applications for these converters are mainly focused for Power over Ethernet (PoE), LED lighting and AC adapters. This work will discuss a study...

  1. Investigating Enhancement Mode Gallium Nitride Power FETs in High Voltage, High Frequency Soft Switching Converters

    DEFF Research Database (Denmark)

    Nour, Yasser; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    An increased attention has been detected to develop smaller and lighter high voltage power converters in the range of 50V to 400V domain. The main applications for these converters are mainly focused for Power over Ethernet (PoE), LED lighting and AC adapters. This work will discuss a study of us...

  2. Integrated Reconfigurable High-Voltage Transmitting Circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2014-01-01

    -out and measurements are performed on the integrated circuit. The transmitting circuit is reconfigurable externally making it able to drive a wide variety of CMUTs. The transmitting circuit can generate several pulse shapes, pulse voltages up to 100 V, maximum pulse range of 50 V and frequencies up to 5 MHz. The area...

  3. Analysis of transistor and snubber turn-off dynamics in high-frequency high-voltage high-power converters

    Science.gov (United States)

    Wilson, P. M.; Wilson, T. G.; Owen, H. A., Jr.

    1982-01-01

    Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated.

  4. Analysis of transistor and snubber turn-off dynamics in high-frequency high-voltage high-power converters

    Science.gov (United States)

    Wilson, P. M.; Wilson, T. G.; Owen, H. A., Jr.

    Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated.

  5. A new low-voltage and high-speed sense amplifier for flash memory

    Institute of Scientific and Technical Information of China (English)

    Guo Jiarong; Ran Feng

    2011-01-01

    A new low-voltage and high-speed sense amplifier is presented,based on a very simple direct currentmode comparison.It adopts low-voltage reference current extraction and a dynamic output method to realize its performance indicators such as low voltage,low power and high precision.The proposed amplifier can sense a 0.5 μA current gap and work with a lowest voltage of 1 V.In addition,the current power of a single amplifier is optimized by 15%.

  6. Elevated temperature performance of high voltage Li1+yMn1.5Ni0.5O4-xFx spinel in window-shifted Li-ion cells

    Science.gov (United States)

    Pereira, Nathalie; Ruotolo, Michael C.; Lu, Matthew Y.; Badway, Fadwa; Amatucci, Glenn G.

    2017-01-01

    Although the LiMn1.5Ni0.5O4 spinel operating at 4.7 V presents some beneficial characteristics over more traditional positive electrode materials, instability issues at elevated temperature have limited its practical use so far. While we previously proposed Li1+yMn1.5Ni0.5O4-xFx (LMNOF) spinel that is intrinsically stable at elevated temperatures in Li-excess half-cell configuration, we investigate herein fixed, non-excess Li-content window-shifted Li-ion systems. By utilizing Li4Ti5O12 (LTO) or TiS2 negative electrodes stable in broad electrolyte compositions instead of carbonaceous electrodes, we aim at limiting the Li-consuming side reactions such as the formation of solid-electrolyte interphase and enable a focus on the exploration of electrolyte compositions including additives. Utilizing such an approach, excellent fundamental stability of LMNOF in a fixed Li-content Li-ion environment is demonstrated at 55 °C with the use of relatively common electrolyte components.

  7. High Energy Density Battery Lithium Thionyl Chloride Improved Reverse Voltage Design.

    Science.gov (United States)

    1981-12-01

    BATTERY LITHIUM THIONYL CHLORIDE IMPROVED R-ETC(U) DEC 81 A E ZOLLA N660011-C-0310...HIGH ENERGY DENSITY BATTERY LITHIUM THIONYL CHLORIDE IMPROVED REVERSE VOLTAGE DESIGN Dr. A. E. Zolla Altus Corporation C:1 1610 Crane Court San Jose...reverse aide If necesary and identify by block number) Lithium Battery Lithium Thionyl Chloride High Energy Density Battery Voltage Reversal Battery

  8. 30 CFR 75.802 - Protection of high-voltage circuits extending underground.

    Science.gov (United States)

    2010-07-01

    ... underground. 75.802 Section 75.802 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as...

  9. Debugging on High-voltage Power Supply,Focusing Power Supply and Magnetic Field Power Supply

    Institute of Scientific and Technical Information of China (English)

    TU; Rui

    2015-01-01

    High-voltage power supply,focusing power supply and magnetic field power supply are the main parts of the power supply system of the EMIS(Electro-Magnetic Isotope Separator)supplying the ion source.In 2015,a high-voltage power supply,power supply for focusing and

  10. High-voltage, short-risetime pulse generator based on a ferrite pulse sharpener

    Energy Technology Data Exchange (ETDEWEB)

    Seddon, N.; Thornton, E.

    1988-11-01

    A high-voltage, short-risetime pulse generator is described. The generator consists of a Marx bank, which produces an initial high-voltage pulse, and a ferrite pulse sharpener that reduces the risetime of the pulse. The generator delivers 70-kV, 350-ps risetime pulses into a 50-..cap omega.. load.

  11. MATHEMATICAL MODEL OF HYBRID ELECTRIC VEHICLE HIGH-VOLTAGE BATTERY IDENTIFICATION

    Directory of Open Access Journals (Sweden)

    S. Serikov

    2010-01-01

    Full Text Available The mathematical model of hybrid electric vehicle NiMH high-voltage battery is obtained. This model allows to explore the interaction of vehicle tractive electric drive and high-voltage battery at the electric motive power motion and in the process of recuperation of braking kinetic energy.

  12. A Novel Series Connected Batteries State of High Voltage Safety Monitor System for Electric Vehicle Application

    Directory of Open Access Journals (Sweden)

    Qiang Jiaxi

    2013-01-01

    Full Text Available Batteries, as the main or assistant power source of EV (Electric Vehicle, are usually connected in series with high voltage to improve the drivability and energy efficiency. Today, more and more batteries are connected in series with high voltage, if there is any fault in high voltage system (HVS, the consequence is serious and dangerous. Therefore, it is necessary to monitor the electric parameters of HVS to ensure the high voltage safety and protect personal safety. In this study, a high voltage safety monitor system is developed to solve this critical issue. Four key electric parameters including precharge, contact resistance, insulation resistance, and remaining capacity are monitored and analyzed based on the equivalent models presented in this study. The high voltage safety controller which integrates the equivalent models and control strategy is developed. By the help of hardware-in-loop system, the equivalent models integrated in the high voltage safety controller are validated, and the online electric parameters monitor strategy is analyzed and discussed. The test results indicate that the high voltage safety monitor system designed in this paper is suitable for EV application.

  13. High voltage bus and auxiliary heater control system for an electric or hybrid vehicle

    Science.gov (United States)

    Murty, Balarama Vempaty

    2000-01-01

    A control system for an electric or hybrid electric vehicle includes a vehicle system controller and a control circuit having an electric immersion heater. The heater is electrically connected to the vehicle's high voltage bus and is thermally coupled to a coolant loop containing a heater core for the vehicle's climate control system. The system controller responds to cabin heat requests from the climate control system by generating a pulse width modulated signal that is used by the control circuit to operate the heater at a duty cycle appropriate for the amount of cabin heating requested. The control system also uses the heater to dissipate excess energy produced by an auxiliary power unit and to provide electric braking when regenerative braking is not desirable and manual braking is not necessary. The control system further utilizes the heater to provide a safe discharge of a bank of energy storage capacitors following disconnection of the battery or one of the high voltage connectors used to transmit high voltage operating power to the various vehicle systems. The control circuit includes a high voltage clamping circuit that monitors the voltage on the bus and operates the heater to clamp down the bus voltage when it exceeds a pre-selected maximum voltage. The control system can also be used to phase in operation of the heater when the bus voltage exceeds a lower threshold voltage and can be used to phase out the auxiliary power unit charging and regenerative braking when the battery becomes fully charged.

  14. Experimental demonstration of vortex pancake in high temperature superconductor

    Institute of Scientific and Technical Information of China (English)

    WANG Wei-xian; ZHANG Yu-heng

    2006-01-01

    In order to demonstrate the existence of the vortex pancake in high temperature superconductor experimentally,a configuration in which the current and voltage electrodes lies separately on the top and bottom surface is used.The E-j relation obtained with this electrodes spatial configuration is different from the expected E-j behavior of the stiff vortex line model.Thus,the current results support the existence of the vortex pancake in high temperature superconductor.

  15. Temperature-dependent current-voltage characteristics of niobium SNIS Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Lacquaniti, V; Andreone, D; Cassiago, C; De Leo, N; Fretto, M; Sosso, A [National Institute of Metrological Research, Electromagnetism Division, Strada delle Cacce 91, 10135 Torino (Italy); Belogolovskii, M, E-mail: v.lacquaniti@inrim.i [Donetsk Physical and Technical Institute, National Academy of Sciences of Ukraine, Str. Rosa Luxemburg. 72, 83114 Donetsk (Ukraine)

    2010-06-01

    Motivated by a search for a suitable technology to fabricate Josephson junctions with a tunable damping regime, we performed a systematic study of the temperature effect on the critical current in Nb/Al-AlO{sub x}-Nb heterostructures with a nanometer-thick Al interlayer. For Al layer thicknesses ranging from 40 to 110 nm, we have observed a transition from hysteretic (below 4.2 K) to non-hysteretic (above 4.2 K) current-voltage curves. Measured supercurrent-vs-temperature characteristics which significantly differ from those of traditional SIS and SNS devices are interpreted in terms of the superconducting proximity effect between Al and Nb films. Thermal stability and good reproducibility of our junctions are demonstrated.

  16. Near-room-temperature refrigeration through voltage-controlled entropy change in multiferroics

    Science.gov (United States)

    Binek, Ch.; Burobina, V.

    2013-01-01

    Composite materials with large magnetoelectric effect are proposed for application in advanced near-room-temperature refrigeration. The key innovation rests on utilizing the magnetocaloric effect in zero applied magnetic fields. This approach promises sizable isothermal entropy change and virtually temperature-independent refrigerant capacity through pure voltage-control. It is in sharp contrast with the conventional method of exploiting the magnetocaloric effect through applied magnetic fields. We outline the thermodynamics and estimate an isothermal entropy change specifically for the La0.7Sr0.3MnO3/Pb(Mg1/3Nb2/3)O3-PbTiO3(001) two-phase composite material. Finally, we propose structural variations of two-phase composites, which help in overcoming the challenging task of producing nanostructured material in macroscopic quantities.

  17. Design and Implementation of a High Efficiency, Low Component Voltage Stress, Single-Switch High Step-Up Voltage Converter for Vehicular Green Energy Systems

    Directory of Open Access Journals (Sweden)

    Yu-En Wu

    2016-09-01

    Full Text Available In this study, a novel, non-isolated, cascade-type, single-switch, high step-up DC/DC converter was developed for green energy systems. An integrated coupled inductor and voltage lift circuit were applied to simplify the converter structure and satisfy the requirements of high efficiency and high voltage gain ratios. In addition, the proposed structure is controllable with a single switch, which effectively reduces the circuit cost and simplifies the control circuit. With the leakage inductor energy recovery function and active voltage clamp characteristics being present, the circuit yields optimizable conversion efficiency and low component voltage stress. After the operating principles of the proposed structure and characteristics of a steady-state circuit were analyzed, a converter prototype with 450 W, 40 V of input voltage, 400 V of output voltage, and 95% operating efficiency was fabricated. The Renesas MCU RX62T was employed to control the circuits. Experimental results were analyzed to validate the feasibility and effectiveness of the proposed system.

  18. Development of Optical Voltage Transducer Based on Dual-Mode Highly Elliptical-Core Polarization Maintenance Fiber

    Institute of Scientific and Technical Information of China (English)

    Wei-Hong Bi; Feng Liu; Xuan Guo

    2008-01-01

    This paper describes an optical voltage transducer (OVT) for the 35 kV electric power system based on modular interference in dual-mode highly elliptical-core polarization maintenance fiber (E-Core PMIF). The temperature and environmental perturb-bation can be compensated automatically. In the scheme, a quartz crystal cylinder wrapped with highly elliptical-core fiber plays the role of voltage sensor head. The two interference output lobes' intensity from the E-core PMF is modulated with the converse piezoelectric effect of quartz crystal. A PZT wrapped with E-core PMF at ground potential serves as the static modular phase difference control and temperature compensation unit. The experiment results indicate that the OVT designed in this paper has satisfying performance and could successfully rejects the temperature perturbation.

  19. HIGH VOLTAGE SMALL – SIZED ALTERNATIVE CURRENT RESISTIVE DIVIDERS FROM MICROWIRE

    Directory of Open Access Journals (Sweden)

    Berzan V.P.

    2011-04-01

    Full Text Available The paper discusses the design parameters and characteristics of the new product, the resistive voltage divider produced from microwire for measuring high-voltage alternating current. Resistive dividers are designed for use in AC circuits and power-frequency electric traction network traffic. Dividers have smaller mass-dimensional size compared with the measuring voltage transformers and higher accuracy class 0.2 at a fixed frequency.

  20. 大型高压干式潜水电机定子三维温度场有限元分析%Calculation of Stator 3D Temperature Field for Large-size High-voltage Dry Submersible Motor

    Institute of Scientific and Technical Information of China (English)

    鲍晓华; 吕强; 王瑞男; 朱庆龙; 刘冰

    2011-01-01

    本文根据传热学理论,建立了大型潜水电机定子三维温度场的数学模型,给出了潜水电机导热系数及散热系数的计算方法.应用有限元法对潜水电机定子三维温度场进行分析计算,并将结果与实际测量值进行比较,验证了所述方法的正确性和实用性.最后,对潜水电机采用不同绝缘等级时电机定子温度场进行了数字模拟研究,得出了一些十分有益的结论,对潜水电机设计及其优化工作具有重要的指导意义.%The 3D mathematical model of the stator temperature field over the large submersible motor are developed based on heat transfer theory. The method of calculating the conductivity and thermal coefficient about submersible motor is given. The finite element method is used to calculate the 3D stator thermal field about submersible motor, and the rationality of the thermal field calculation method and the validity of the calculated values are verified by experimental results. The influence of different insulation in the motor stator temperature field are analysed, which could help optimum design of submersible motor in future applications.

  1. Analysis of cutting-edge techniques in the high voltage and high power adjustable speed drive systems

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The high voltage and high power adjustable speed drive (ASD) system is one of the most attractive fields in power electronics, and it is also a very crucial technique for energy saving and emission reduction. This paper discussed and analyzed the main cutting-edge knowledge and issues in the process of exploiting the high voltage and high power ASD system.

  2. Loading Analysis of Modular Multi-level Converter for Offshore High-voltage DC Application under Various Grid Faults

    DEFF Research Database (Denmark)

    Liu, Hui; Ma, Ke; Loh, Poh Chiang;

    2016-01-01

    The modular multi-level converter has become an interesting candidate in high-voltage DC systems due to its higher voltage levels and modular construction. Low-voltage ride-through is an important grid requirement for modular multi-level converter–high-voltage DC since not only causes control cha...... be of importance for the design of the cooling system....

  3. A high-voltage test for the ATLAS RPC qualification

    CERN Document Server

    Aielli, G; Cardarelli, R; Di Ciaccio, A; Di Simone, A; Liberti, B; Santonico, R

    2004-01-01

    The RPC production sequence for the ATLAS experiment includes a specific test of current absorption at the operating point, which concerns the RPC "gas volumes", namely the bare detectors not yet assembled with the read-out panels and the mechanical support structures. The test, which is carried out at the production site, consists of two phases. The gas volumes are initially conditioned with pure argon, keeping the voltage constant just above the breakdown value of about 2 kV. The final test, performed after the volumes have undergone inner surface varnishing with linseed oil, is based on the measurement of the current-voltage characteristics with the binary operating gas, C//2H//2F//4/i-C//4H//1//0 = 95/5. The results presented here concern 45% of the total foreseen production.

  4. HIGH TEMPERATURE POLYMER FUEL CELLS

    DEFF Research Database (Denmark)

    Jensen, Jens Oluf; Qingfeng, Li; He, Ronghuan

    2003-01-01

    This paper will report recent results from our group on polymer fuel cells (PEMFC) based on the temperature resistant polymer polybenzimidazole (PBI), which allow working temperatures up to 200°C. The membrane has a water drag number near zero and need no water management at all. The high working...

  5. Fast Coordinated Control of DFIG Wind Turbine Generators for Low and High Voltage Ride-Through

    Directory of Open Access Journals (Sweden)

    Yun Wang

    2014-06-01

    Full Text Available This paper presents a fast coordinated control scheme of the rotor side converter (RSC, the Direct Current (DC chopper and the grid side converter (GSC of doubly fed induction generator (DFIG wind turbine generators (WTGs to improve the low voltage ride through (LVRT and high voltage ride through (HVRT capability of the DFIG WTGs. The characteristics of DFIG WTGs under voltage sags and swells were studied focusing on the DFIG WTG stator flux and rotor voltages during the transient periods of grid voltage changes. The protection schemes of the rotor crowbar circuit and the DC chopper circuit were proposed considering the characteristics of the DFIG WTGs during voltage changes. The fast coordinated control of RSC and GSC were developed based on the characteristic analysis in order to realize efficient LVRT and HVRT of the DFIG WTGs. The proposed fast coordinated control schemes were verified by time domain simulations using Matlab-Simulink.

  6. Summary of transient high-voltage calculations for the FRX-C experiment

    Energy Technology Data Exchange (ETDEWEB)

    Kewish, R.W. Jr.; Rej, D.J.

    1982-06-01

    Calculations of the electrical circuit equations are performed over a wide range of parameters corresponding to the FRX-C field-reversed THETA-pinch experiment at Los Alamos. Without any plasma or external damping, serious voltage doubling and quadrupling of the main capacitor bank charge voltage are observed. These oscillating high voltages are found to be adequately suppressed by the strategic placement of external snubber circuitry. On the other hand, no doubling of the THETA-pinch preionization bank charge voltage is found. Calculations of the equations for the z-pinch preionization circuit are also performed.

  7. Synthesis of lanthanum tungstate interconnecting nanoparticles by high voltage electrospinning

    Energy Technology Data Exchange (ETDEWEB)

    Keereeta, Yanee, E-mail: ynkeereeta@gmail.com [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongtem, Titipun, E-mail: ttpthongtem@yahoo.com [Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thongtem, Somchai [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2015-10-01

    Graphical abstract: - Highlights: • La{sub 2}(WO{sub 4}){sub 3} as one of semiconducting materials. • H.V. electrospinning was used to synthesize La{sub 2}(WO{sub 4}){sub 3} interconnecting nanoparticles. • A promising material for photoemission. - Abstract: Lanthanum tungstate (La{sub 2}(WO{sub 4}){sub 3}) interconnecting nanoparticles in the shape of fibers were successfully synthesized by electrospinning in combination with high temperature calcination. In this research, calcination temperature for the synthesis of the fibers evidently influenced the diameter, morphology and crystalline degree. The crystalline monoclinic La{sub 2}(WO{sub 4}){sub 3} fibers with 200–700 nm in diameter, two main Raman peaks at 945 and 927 cm{sup −1}, FTIR stretching modes at 936 and 847 cm{sup −1}, 2.02 eV energy gap and 415–430 nm blue emission were synthesized by calcination of inorganic/organic hybrid fibers at 750 °C for 5 h, characterized by X-ray diffraction, scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED), thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, UV–visible spectroscopy and photoluminescence (PL) spectroscopy. The surface of the composite fibers before calcination was very smooth. Upon calcination the composite fibers at 750 °C for 5 h, they were transformed into nanoparticles join together in the shape of fibers with rough surface.

  8. High Input Voltage Discharge Supply for High Power Hall Thrusters Using Silicon Carbide Devices

    Science.gov (United States)

    Pinero, Luis R.; Scheidegger, Robert J.; Aulsio, Michael V.; Birchenough, Arthur G.

    2014-01-01

    A power processing unit for a 15 kW Hall thruster is under development at NASA Glenn Research Center. The unit produces up to 400 VDC with two parallel 7.5 kW discharge modules that operate from a 300 VDC nominal input voltage. Silicon carbide MOSFETs and diodes were used in this design because they were the best choice to handle the high voltage stress while delivering high efficiency and low specific mass. Efficiencies in excess of 97 percent were demonstrated during integration testing with the NASA-300M 20 kW Hall thruster. Electromagnet, cathode keeper, and heater supplies were also developed and will be integrated with the discharge supply into a vacuum-rated brassboard power processing unit with full flight functionality. This design could be evolved into a flight unit for future missions that requires high power electric propulsion.

  9. DEVELOPMENT OF HIGH-VOLTAGE HIGH-FREQUENCY POWER SUPPLY FOR OZONE GENERATION

    Directory of Open Access Journals (Sweden)

    NACERA HAMMADI

    2016-05-01

    Full Text Available A high-voltage high-frequency power supply for ozone generation is presented in this paper. Ozone generation is intended to be used in air and in water disinfection. A power stage consisting of a single-phase full bridge inverter for regulating the output power, a current push-pull inverter (driver and a control circuit are described and analyzed. This laboratory build power supply using a high voltage ferrite transformer and a PIC microcontroller was employed to energize a dielectric barrier discharge (DBD ozone generator. The inverter working on the basis of control strategy is of simple structure and has a variation range of the working frequency in order to obtain the optimal frequency value. The experimental results concerning electrical characterization and water treatment using a cylindrical DBD ozone generator supplied by this power supply are given in the end.

  10. High Temperature Bell Motor Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The National Research Council (NRC) has identified the need for motors and actuators that can operate in extreme high and low temperature environments as a technical...

  11. High Temperature Materials Laboratory (HTML)

    Data.gov (United States)

    Federal Laboratory Consortium — The six user centers in the High Temperature Materials Laboratory (HTML), a DOE User Facility, are dedicated to solving materials problems that limit the efficiency...

  12. An Integrated Chip High-Voltage Power Receiver for Wireless Biomedical Implants

    Directory of Open Access Journals (Sweden)

    Vijith Vijayakumaran Nair

    2015-06-01

    Full Text Available In near-field wireless-powered biomedical implants, the receiver voltage largely overrides the compliance of low-voltage power receiver systems. To limit the induced voltage, generally, low-voltage topologies utilize limiter circuits, voltage clippers or shunt regulators, which are power-inefficient methods. In order to overcome the voltage limitation and improve power efficiency, we propose an integrated chip high-voltage power receiver based on the step down approach. The topology accommodates voltages as high as 30 V and comprises a high-voltage semi-active rectifier, a voltage reference generator and a series regulator. Further, a battery management circuit that enables safe and reliable implant battery charging based on analog control is proposed and realized. The power receiver is fabricated in 0.35-μm high-voltage Bipolar-CMOS-DMOStechnology based on the LOCOS0.35-μm CMOS process. Measurement results indicate 83.5% power conversion efficiency for a rectifier at 2.1 mA load current. The low drop-out regulator based on the current buffer compensation and buffer impedance attenuation scheme operates with low quiescent current, reduces the power consumption and provides good stability. The topology also provides good power supply rejection, which is adequate for the design application. Measurement results indicate regulator output of 4 ± 0.03 V for input from 5 to 30 V and 10 ± 0.05 V output for input from 11 to 30 V with load current 0.01–100 mA. The charger circuit manages the charging of the Li-ion battery through all if the typical stages of the Li-ion battery charging profile.

  13. Cold wire constant voltage anemometry to measure temperature fluctuations and its application in a thermoacoustic system

    Science.gov (United States)

    Cleve, Sarah; Jondeau, Emmanuel; Blanc-Benon, Philippe; Comte-Bellot, Geneviève

    2017-04-01

    The knowledge of temperature fluctuations is essential for most thermoacoustic systems. In the present paper, cold wire constant-voltage anemometry (CVA) to measure temperature fluctuations is presented. Corrections for the thermal inertia and for the end losses of the wire are applied during the post-processing. The correction for the thermal inertia of the cold wire is achieved by applying a time dependent thermal lag as proposed originally for a constant-current anemometry (CCA) system. This thermal lag is measured in parallel by a hot wire. The thermal end losses of the wires to their supports are also considered and approximate corrections are proposed. The procedure for the cold wire CVA is validated in the acoustic field of an acoustic resonator with wires of different lengths. A comparison between a CVA and a CCA measurement also confirms the CVA measurement. Furthermore, the proposed measurement procedure is applied close to the stack of a thermoacoustic refrigerator. Supposing a two-dimensional flow, the simultaneous measurement of velocity and temperature fluctuations is possible. This allows a detailed examination of the acoustic field close to the stack, including the study of the correlation between temperature and velocity.

  14. Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    : off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize...

  15. Response of low voltage networks with high penetration of photovoltaic systems to transmission network faults

    NARCIS (Netherlands)

    Skaloumpakas, K.; Boemer, J.C.; Van Ruitenbeek, E.; Gibescu, M.

    2014-01-01

    The installed capacity of photovoltaic (PV) systems connected to low voltage (LV) networks in Germany has increased to more than 25 GW. Current grid codes still mandate these PV systems to disconnect in case of voltage dips below 0.8 p.u. The resulting response of LV distribution systems with high p

  16. Fast Coordinated Control of DFIG Wind Turbine Generators for Low and High Voltage Ride-Through

    DEFF Research Database (Denmark)

    Wang, Yun; Wu, Qiuwei; Xu, Honghua

    2014-01-01

    This paper presents a fast coordinated control scheme of the rotor side converter (RSC), the DC chopper and the grid side converter (GSC) of doubly fed induction generator (DFIG) wind turbine generators (WTGs) which is to improve the low voltage ride through (LVRT) and high voltage ride through (...... verified by time domain simulations using MATLAB-Simulink....

  17. Electronics drivers for high voltage dielectric electro active polymer (DEAP) applications

    DEFF Research Database (Denmark)

    Zhang, Zhe; Andersen, Michael A. E.

    2015-01-01

    ), but the voltage balancing across the series - connected high voltage IGBTs is a critical issue and accordi ngly a novel gate driver circuitry is proposed and equipped; due to the requirements of the audio products, such as low distortion and noise, the multi - level Buck converter based Class - D amplifier...

  18. Development of Fiber Optically Driven Instrument for High-voltage Line Current

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The measurement theorem of fiber optically driven instrument for high-voltage line current is presented. The PLL voltage-frequency-narrow pulse principle and its micro-consumption mechanism are proposed, followed by analysis on the two main factors affecting PLL measurement precision. A software design scheme using 80C196KB micro-controller is introduced. The experiment result is satisfactory.

  19. High-voltage thin-film GaN LEDs fabricated on ceramic substrates: the alleviated droop effect at 670 W/cm(2).

    Science.gov (United States)

    Tsai, M L; Liao, J H; Yeh, J H; Hsu, T C; Hon, S J; Chung, T Y; Lai, K Y

    2013-11-04

    High-voltage thin-film GaN LEDs with the emission wavelength of 455 nm were fabricated on ceramic substrates (230 W/m · K). The high-voltage operation was achieved by three cascaded sub-LEDs with dielectric passivation and metal bridges conformally deposited on the side walls. Under the driving power of 670 W/cm(2), the high-voltage LEDs exhibit much alleviated efficiency droop and the operative temperature below 80 °C. The excellent performances were attributed to the improved current spreading within each sub-LED and the superior heat sinking of the ceramic substrate.

  20. The Dynamic Fracture Process in Rocks Under High-Voltage Pulse Fragmentation

    Science.gov (United States)

    Cho, Sang Ho; Cheong, Sang Sun; Yokota, Mitsuhiro; Kaneko, Katsuhiko

    2016-10-01

    High-voltage pulse technology has been applied to rock excavation, liberation of microfossils, drilling of rocks, oil and water stimulation, cleaning castings, and recycling products like concrete and electrical appliances. In the field of rock mechanics, research interest has focused on the use of high-voltage pulse technology for drilling and cutting rocks over the past several decades. In the use of high-voltage pulse technology for drilling and cutting rocks, it is important to understand the fragmentation mechanism in rocks subjected to high-voltage discharge pulses to improve the effectiveness of drilling and cutting technologies. The process of drilling rocks using high-voltage discharge is employed because it generates electrical breakdown inside the rocks between the anode and cathode. In this study, seven rock types and a cement paste were electrically fractured using high-voltage pulse discharge to investigate their dielectric breakdown properties. The dielectric breakdown strengths of the samples were compared with their physical and mechanical properties. The samples with dielectric fractured were scanned using a high-resolution X-ray computed tomography system to observe the fracture formation associated with mineral constituents. The fracture patterns of the rock samples were analyzed using numerical simulation for high-voltage pulse-induced fragmentation that adopts the surface traction and internal body force conditions.

  1. Role of Stress Voltage on Structural Degradation of GaN High-Electron-Mobility Transistors

    Science.gov (United States)

    2010-01-01

    GaN high-electron-mobility transistors ( HEMTs ) under high- voltage electrical stress degradation in the drain and gate current is electric field... GaN HEMTs after long-term DC and RF life tests at high voltage [12–16]. Crystallographic defects such as pits and cracks have been observed at the...created by high-voltage stress in GaN HEMTs . A complementary study of the evolution of these de- fects in the cross section as a function of stress

  2. Experimental study on high-voltage solar array sustained arc discharge induced by high charging

    Institute of Scientific and Technical Information of China (English)

    LI Kai; XIE ErQing; WANG Li; LIU YanXia; YANG Yang; SUN YanZheng; CUI XinYu; MAI ShengLi

    2007-01-01

    It has been reported that sustained arc discharge induced by electrostatic discharge (ESD) could cause permanent damage to high-power and high-voltage solar array of spacecrafts. The paper focuses on ESD simulating experiments on Si and GaAs samples, and induces sustained arc discharge. The physical mechanism of sustained arc discharge is discussed by comparing the charging/discharging phenomena between Si and GaAs samples. The experiments show that sustained arc discharge can produce a permanent short-circuit channel between solar cell strings through which the solar array's photovoltaic power may flow out sustainedly. The analyses show that sustained arc discharge strongly depends on solar array structure, solar array operating voltage, ESD characteristics and cell materials.

  3. Experimental study on high-voltage solar array sustained arc discharge induced by high charging

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    It has been reported that sustained arc discharge induced by electrostatic discharge (ESD) could cause permanent damage to high-power and high-voltage solar array of spacecrafts. The paper focuses on ESD simulating experiments on Si and GaAs samples, and induces sustained arc discharge. The physical mechanism of sustained arc discharge is discussed by comparing the charging/discharging phenomena between Si and GaAs samples. The experiments show that sustained arc discharge can produce a permanent short-circuit channel between solar cell strings through which the solar array’s photovoltaic power may flow out sustainedly. The analyses show that sustained arc discharge strongly depends on solar array structure, solar array operating voltage, ESD characteristics and cell materials.

  4. Efficient Parametric Identification Method for High Voltage Pulse Transformers

    CERN Document Server

    Aguglia, D; Viarouge, P; Cros, J

    2014-01-01

    This paper presents a new identification method for a pulse transformer equivalent circuit. It is based on an analytical approximation of the frequency-domain impedance data derived from a no-load test with open-circuited secondary winding and only requires measurements of primary current and voltage without phase data. Compared with time consuming and complex methods based on off-line non-linear identification procedures, this simple method also gives an estimation of the error on the identified parameters. The method is validated on an existing pulse transformer.

  5. High Voltage Power Converter for Large Wind Turbine

    DEFF Research Database (Denmark)

    Sztykiel, Michal

    performance has been achieved by the transformer-less turbine with a back-to-back modular multilevel converter (MMC) topology, which is single grounded only through its DC link common-mode point. It has also occurred that the results derived from losses and short circuit analyses have become advantageous over...... system operates at 20 kV level - identical as for the collector distribution network. Medium voltage operation allows the converter unit along with the filter to be installed on the base platform inside the tower. In this manner, more space in the nacelle can be flexibly accommodated by the mechanical...

  6. A New High Frequency Injection Method Based on Duty Cycle Shifting without Maximum Voltage Magnitude Loss

    DEFF Research Database (Denmark)

    Wang, Dong; Lu, Kaiyuan; Rasmussen, Peter Omand

    2015-01-01

    The conventional high frequency signal injection method is to superimpose a high frequency voltage signal to the commanded stator voltage before space vector modulation. Therefore, the magnitude of the voltage used for machine torque production is limited. In this paper, a new high frequency...... injection method, in which high frequency signal is generated by shifting the duty cycle between two neighboring switching periods, is proposed. This method allows injecting a high frequency signal at half of the switching frequency without the necessity to sacrifice the machine fundamental voltage...... amplitude. This may be utilized to develop new position estimation algorithm without involving the inductance in the medium to high speed range. As an application example, a developed inductance independent position estimation algorithm using the proposed high frequency injection method is applied to drive...

  7. Effect of temperature on the current (capacitance and conductance)–voltage characteristics of Ti/n-GaAs diode

    Energy Technology Data Exchange (ETDEWEB)

    Ejderha, K. [Department of Electricity and Energy, Vocational High School of Technical Sciences, Bingol University, 12000 Bingol (Turkey); Duman, S., E-mail: sduman@atauni.edu.tr; Urhan, F. [Department of Physics, Faculty of Sciences, Ataturk University, 25240 Erzurum (Turkey); Nuhoglu, C. [Department of Physics, Faculty of Sciences, Yildiz Technical University, 34220 Istanbul (Turkey); Turut, A. [Department of Engineering Physics, Faculty of Sciences, Istanbul Medeniyet University, 34700 Istanbul (Turkey)

    2014-12-21

    In this study, Ti/n-GaAs Schottky barrier diode has been fabricated by DC magnetron sputtering. The current–voltage, capacitance–voltage, and conductance–voltage characteristics of Ti/n–GaAs diode have been investigated in the temperature range of 80–320 K. The ideality factor and barrier height values have been calculated from the forward current–voltage characteristics. The variation of the diode parameters with the sample temperature has been attributed to the presence of the lateral inhomogeneities of the barrier height. The temperature dependent capacitance–voltage characteristics have been measured to calculate the carrier concentration, diffusion potential, barrier height, and temperature coefficient of the barrier height (α = −0.65 meV K{sup −1}). The fact that the temperature coefficient of the barrier height changes from metal to metal has been ascribed to the chemical nature of the contact metal or metal electronegativity.

  8. Novel substrate trigger SCR-LDMOS stacking structure for high-voltage ESD protection application

    Institute of Scientific and Technical Information of China (English)

    马金荣; 乔明; 张波

    2015-01-01

    A novel substrate trigger semiconductor control rectifier-laterally diffused metal–oxide semiconductor (STSCR-LDMOS) stacked structure is proposed and simulated using the transimission line pulser (TLP) multiple-pulse simulation method in a 0.35-µm, 60-V biploar-CMOS-DMOS (BCD) process without additional masks. On account of a very low holding voltage, it is susceptible to latch-up-like danger for the semiconductor control rectifier-laterally diffused metal–oxide semiconductor (SCR-LDMOS) in high-voltage electro-static discharge (ESD) protection applications. Although the conventional stacking structure has achieved strong latch-up immunity by increasing holding voltage, excessive high trigger voltage does not meet requirements for an ESD protection device. The holding voltage of the proposed stacked structure is proportional to the stacking number, whereas the trigger voltage remains nearly the same. A high holding voltage of 30.6 V and trigger voltage of 75.4 V are achieved.

  9. Nickel-gallium arsenide high-voltage power Schottky diodes

    Science.gov (United States)

    Ashkinazi, G.; Hadas, Tz.; Meyler, B.; Nathan, M.; Zolotarevski, L.; Zolotarevski, O.

    1993-01-01

    A power GaAs Schottky diode (SD) with a chemically deposited Ni barrier was designed, fabricated and tested. The diode has a reverse breakdown voltage VBR of 140 V, forward voltage drop VF (at 50 A/cm 2) of 0.7 V at 23°C, 0.5 V at 150°C and 0.3 V at 250°C, and reverse leakage current densities jR (at -50 V) of 0.1 μA/cm 2 at 23°C and 1 mA/cm 2 at 150°C. Calculated forward and reverse I- V characteristics using a simple self-consistent computer model are in good agreement with measured values. Calculated characteristics of a silicon SD with identical structure parameters, using the same model, show much poorer VBR, VF and jR values. The theoretical maximum value of VBR is physically limited by the largest allowed VF. For a V Fof ⋍1.6 V, V BR.maxis ⋍200 V in Si and ⋍800 simple technology allows manufacturing of large area GaAs Schottky diodes with average currents up to V in GaAs SDs. Our relatively 100 A.

  10. On-chip high-voltage generator design design methodology for charge pumps

    CERN Document Server

    Tanzawa, Toru

    2016-01-01

    This book provides various design techniques for switched-capacitor on-chip high-voltage generators, including charge pump circuits, regulators, level shifters, references, and oscillators.  Readers will see these techniques applied to system design in order to address the challenge of how the on-chip high-voltage generator is designed for Flash memories, LCD drivers, and other semiconductor devices to optimize the entire circuit area and power efficiency with a low voltage supply, while minimizing the cost.  This new edition includes a variety of useful updates, including coverage of power efficiency and comprehensive optimization methodologies for DC-DC voltage multipliers, modeling of extremely low voltage Dickson charge pumps, and modeling and optimum design of AC-DC switched-capacitor multipliers for energy harvesting and power transfer for RFID.

  11. Analysis of trigger behavior of high voltage LDMOS under TLP and VFTLP stress

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Jing; Qian Qinsong; Sun Weifeng; Liu Siyang, E-mail: zhj_seu@126.co [National ASIC System Engineering Research Center, Southeast University, Nanjing 210096 (China)

    2010-01-15

    The physical mechanisms triggering electrostatic discharge (ESD) in high voltage LDMOS power transistors (> 160 V) under transmission line pulsing (TLP) and very fast transmission line pulsing (VFTLP) stress are investigated by TCAD simulations using a set of macroscopic physical models related to previous studies implemented in Sentaurus Device. Under VFTLP stress, it is observed that the triggering voltage of the high voltage LDMOS obviously increases, which is a unique phenomenon compared with the low voltage ESD protection devices like NMOS and SCR. The relationship between the triggering voltage increase and the parasitic capacitances is also analyzed in detail. A compact equivalent circuit schematic is presented according to the investigated phenomena. An improved structure to alleviate this effect is also proposed and confirmed by the experiments. (semiconductor devices)

  12. Gallium phosphide high temperature diodes

    Science.gov (United States)

    Chaffin, R. J.; Dawson, L. R.

    1981-01-01

    High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

  13. Process engineering of high voltage alginate encapsulation of mesenchymal stem cells

    Energy Technology Data Exchange (ETDEWEB)

    Gryshkov, Oleksandr, E-mail: gryshkov@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz University Hannover, D-30167 Hannover (Germany); Pogozhykh, Denys, E-mail: pogozhykh@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz University Hannover, D-30167 Hannover (Germany); Zernetsch, Holger, E-mail: zernetsch@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz University Hannover, D-30167 Hannover (Germany); Hofmann, Nicola, E-mail: hofmann@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz University Hannover, D-30167 Hannover (Germany); Mueller, Thomas, E-mail: mueller.thomas@mh-hannover.de [Institute for Transfusion Medicine, Medical School Hannover, D-30625 Hannover (Germany); Glasmacher, Birgit, E-mail: glasmacher@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz University Hannover, D-30167 Hannover (Germany)

    2014-03-01

    Encapsulation of stem cells in alginate beads is promising as a sophisticated drug delivery system in treatment of a wide range of acute and chronic diseases. However, common use of air flow encapsulation of cells in alginate beads fails to produce beads with narrow size distribution, intact spherical structure and controllable sizes that can be scaled up. Here we show that high voltage encapsulation (≥ 15 kV) can be used to reproducibly generate spherical alginate beads (200–400 μm) with narrow size distribution (± 5–7%) in a controlled manner under optimized process parameters. Flow rate of alginate solution ranged from 0.5 to 10 ml/h allowed producing alginate beads with a size of 320 and 350 μm respectively, suggesting that this approach can be scaled up. Moreover, we found that applied voltages (15–25 kV) did not alter the viability and proliferation of encapsulated mesenchymal stem cells post-encapsulation and cryopreservation as compared to air flow. We are the first who employed a comparative analysis of electro-spraying and air flow encapsulation to study the effect of high voltage on alginate encapsulated cells. This report provides background in application of high voltage to encapsulate living cells for further medical purposes. Long-term comparison and work on alginate–cell interaction within these structures will be forthcoming. - Highlights: • High voltage alginate encapsulation of mesenchymal stem cells (MSCs) was designed. • Reproducible and spherical alginate beads were generated via high voltage. • Air flow encapsulation was utilized as a comparative approach to high voltage. • High voltage did not alter the viability and proliferation of encapsulated MSCs. • High voltage encapsulation can be scaled up and applied in cell-based therapy.

  14. Realization of a high voltage generator by series connection of floating modules.

    Science.gov (United States)

    Antonini, P; Benato, A; Borsato, E; Carugno, G; Gobbo, R; Montecassiano, F; Pegoraro, M; Pesavento, G; Zago, M; Zotto, P

    2017-02-01

    A high voltage generator built by a series connection of 100 kV modules was produced. The series connection feasibility is ensured by the inherent floating character of each module which is wireless powered by high efficiency photovoltaic cells illuminated by a laser system. Each module is equipped with a control and monitoring board allowing excellent stabilization of the high voltage output. The performance of the system in terms of reliability, stability, and efficiency was evaluated. In particular using a three module setup, we achieved a maximum voltage of 234 kV with stability better than 0.1%.

  15. RPC operation at high temperature

    CERN Document Server

    Aielli, G; Cardarelli, R; Di Ciaccio, A; Di Stante, L; Liberti, B; Paoloni, A; Pastori, E; Santonico, R

    2003-01-01

    The resistive electrodes of RPCs utilised in several current experiments (ATLAS, CMS, ALICE, BABAR and ARGO) are made of phenolic /melaminic polymers, with room temperature resistivities ranging from 10**1**0 Omega cm, for high rate operation in avalanche mode, to 5 multiplied by 10**1**1 Omega cm, for streamer mode operation at low rate. The resistivity has however a strong temperature dependence, decreasing exponentially with increasing temperature. We have tested several RPCs with different electrode resistivities in avalanche as well as in streamer mode operation. The behaviours of the operating current and of the counting rate have been studied at different temperatures. Long-term operation has also been studied at T = 45 degree C and 35 degree C, respectively, for high and low resistivity electrodes RPCs.

  16. Temperature optimization of high con

    Directory of Open Access Journals (Sweden)

    M. Sabry

    2016-06-01

    Full Text Available Active cooling is essential for solar cells operating under high optical concentration ratios. A system comprises four solar cells that are in thermal contact on top of a copper tube is proposed. Water is flowing inside the tube in order to reduce solar cells temperature for increasing their performance. Computational Fluid Dynamics (CFD simulation of such system has been performed in order to investigate the effect of water flow rate, tube internal diameter, and convective heat transfer coefficient on the temperature of the solar cells. It is found that increasing convective heat transfer coefficient has a significant effect on reducing solar cells temperatures operating at low flow rates and high optical concentration ratios. Also, a further increase of water flow rate has no effect on reducing cells temperatures.

  17. HIgh Temperature Photocatalysis over Semiconductors

    Science.gov (United States)

    Westrich, Thomas A.

    Due in large part to in prevalence of solar energy, increasing demand of energy production (from all sources), and the uncertain future of petroleum energy feedstocks, solar energy harvesting and other photochemical systems will play a major role in the developing energy market. This dissertation focuses on a novel photochemical reaction process: high temperature photocatalysis (i.e., photocatalysis conducted above ambient temperatures, T ≥ 100°C). The overarching hypothesis of this process is that photo-generated charge carriers are able to constructively participate in thermo-catalytic chemical reactions, thereby increasing catalytic rates at one temperature, or maintaining catalytic rates at lower temperatures. The photocatalytic oxidation of carbon deposits in an operational hydrocarbon reformer is one envisioned application of high temperature photocatalysis. Carbon build-up during hydrocarbon reforming results in catalyst deactivation, in the worst cases, this was shown to happen in a period of minutes with a liquid hydrocarbon. In the presence of steam, oxygen, and above-ambient temperatures, carbonaceous deposits were photocatalytically oxidized over very long periods (t ≥ 24 hours). This initial experiment exemplified the necessity of a fundamental assessment of high temperature photocatalytic activity. Fundamental understanding of the mechanisms that affect photocatalytic activity as a function of temperatures was achieved using an ethylene photocatalytic oxidation probe reaction. Maximum ethylene photocatalytic oxidation rates were observed between 100 °C and 200 °C; the maximum photocatalytic rates were approximately a factor of 2 larger than photocatalytic rates at ambient temperatures. The loss of photocatalytic activity at temperatures above 200 °C is due to a non-radiative multi-phonon recombination mechanism. Further, it was shown that the fundamental rate of recombination (as a function of temperature) can be effectively modeled as a

  18. HIGH TEMPERATURE POLYMER FUEL CELLS

    DEFF Research Database (Denmark)

    Jensen, Jens Oluf; Qingfeng, Li; He, Ronghuan

    2003-01-01

    This paper will report recent results from our group on polymer fuel cells (PEMFC) based on the temperature resistant polymer polybenzimidazole (PBI), which allow working temperatures up to 200°C. The membrane has a water drag number near zero and need no water management at all. The high working...... temperature allows for utilization of the excess heat for fuel processing. Moreover, it provides an excellent CO tolerance of several percent, and the system needs no purification of hydrogen from a reformer. Continuous service for over 6 months at 150°C has been demonstrated....

  19. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

    CERN Document Server

    Benoit, M; de Mendizabal, J. Bilbao; Chen, H; Chen, K; Di Bello, F.A; Ferrere, D; Golling, T; Gonzalez-Sevilla, S; Iacobucci, G; Lanni, F; Liu, H; Meng, L; Miucci, A; Muenstermann, D; Nessi, M; Peric, I; Rimoldi, M; Ristic, B; Pinto, M. Vicente Barrero; Vossebeld, J; Weber, M; Wu, W; Xu, L

    2016-01-01

    Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

  20. Irreversible electroporation ablation area enhanced by synergistic high- and low-voltage pulses

    Science.gov (United States)

    2017-01-01

    Irreversible electroporation (IRE) produced by a pulsed electric field can ablate tissue. In this study, we achieved an enhancement in ablation area by using a combination of short high-voltage pulses (HVPs) to create a large electroporated area and long low-voltage pulses (LVPs) to ablate the electroporated area. The experiments were conducted in potato tuber slices. Slices were ablated with an array of four pairs of parallel steel electrodes using one of the following four electric pulse protocols: HVP, LVP, synergistic HVP+LVP (SHLVP) or LVP+HVP. Our results showed that the SHLVPs more effectively necrotized tissue than either the HVPs or LVPs, even when the SHLVP dose was the same as or lower than the HVP or LVP doses. The HVP and LVP order mattered and only HVPs+LVPs (SHLVPs) treatments increased the size of the ablation zone because the HVPs created a large electroporated area that was more susceptible to the subsequent LVPs. Real-time temperature change monitoring confirmed that the tissue was non-thermally ablated by the electric pulses. Theoretical calculations of the synergistic effects of the SHLVPs on tissue ablation were performed. Our proposed SHLVP protocol provides options for tissue ablation and may be applied to optimize the current clinical IRE protocols. PMID:28253331

  1. In-situ studies on phase transformations under electron irradiation in a high voltage electron microscope

    Indian Academy of Sciences (India)

    S Banerjee

    2003-06-01

    High voltage electron microscopy (HVEM), using electron energies adequate for causing displacements of atoms from lattice sites, is a very effective technique for studying mechanisms of solid state phase transformations and for charting the path of phase evolution in real time. This has been demonstrated in studies on chemical ordering in nickel–molybdenum alloys and on the $\\beta \\to \\omega$ displacement ordering in zirconium-niobium alloys. The enhanced diffusivity due to electron irradiation makes it possible to explore a sequence of phase evolution at low enough temperatures where even some first-order transformations are driven by free energy (G) instabilities with respect to the relevant order parameter $(\\eta)$. Specific issues addressed in these studies are reviewed in this paper.

  2. Experimental modeling of high-voltage corona discharge using design of experiments

    Institute of Scientific and Technical Information of China (English)

    Rezzouga M; Tilmatine A; Gouri R; Medics K; Dascalescu L

    2007-01-01

    Many studies,both experimental and numerical,were devoted to the electric current of corona discharge and some mathematical models were proposed to express it.As it depends on several parameters,it is difficult to find a theoretical or an experimental formula,which considers all the factors.So we opted for the methodology of experimental designs,also called Tagushi's methodology,which represents a powerful tool generally employed when the process has many factors to consider.The objective of this paper is to model current using this experimental methodology.The factors considered were geometrical factors (interelectrode interval,surface of the grounded plane electrode,curvature radius of the point electrode),climatic factors (temperature and relative humidity),and applied high voltage.Results of experiments made it possible to obtain mathematical models and to analyse the interactions between all factors.

  3. High-voltage electron-microscopical observation of crack-tip dislocations in silicon crystals

    Energy Technology Data Exchange (ETDEWEB)

    Tanaka, Masaki [Department of Materials Science and Engineering, Kyushu University, 6-10-1 Higashi-ku Fukuoka 812-8581 (Japan)]. E-mail: masaki@dera.zaiko.kyushu-u.ac.jp; Higashida, Kenji [Department of Materials Science and Engineering, Kyushu University, 6-10-1 Higashi-ku Fukuoka 812-8581 (Japan)

    2005-07-25

    Crack-tip dislocations in silicon single crystals were observed by high-voltage electron microscopy. Cracks were introduced into silicon wafers at room temperature by a Vickers indenter. The indented specimens were annealed at 823 K in order to activate dislocation emission from the crack tip under the residual stress due to the indentation. In the specimen without annealing, no dislocations were observed around the crack. On the other hand, in the specimen after the annealing, the aspect of the early stage of dislocation emission was observed, where dislocations were emitted not as a perfect dislocation but as a partial dislocation in the hinge-type plastic zone. Prominent dislocation arrays that were emitted from a crack tip were also observed, and they were found to be of shielding type, which increases the fracture toughness of those crystals.

  4. Preparation methodology and possible treatments for improved ceramics for high voltage vacuum applications

    CERN Document Server

    Tan, J

    1998-01-01

    The flashover characteristics of an insulator bridged high voltage vacuum gap can play an important role in the overall performance of a high voltage device, for example in the extreme environments of high energy particle accelerators. The detailed preparation of the insulators is, at present, governed by the commercial production methods and by standard bulk cleaning processes, which for a particular application may be far from optimum. The influence of the mechanical preparation, thermal history and particular cleaning technique have been investigated for commercially available alumina samples, with measurement of surface characteristics by scanning electron microscopy and laser diffraction, measurement of the secondary electron emission curve and analysis of the high voltage performance with the possibility of applied fields up to 200kV/cm. The results of the different measurements are discussed in the overall context of the problems encountered in the full sized high voltage devices, and suggestions are m...

  5. A New High Precision Power Detector of Complex Voltage Signals

    Directory of Open Access Journals (Sweden)

    Petrović Predrag B.

    2015-08-01

    Full Text Available A current-mode bipolar power detector based on a novel synthesis of translinear loop squarer/divider is presented. The circuits consist of a single multiple-output current controlled current differencing transconductance amplifier (MO-CCCDTA, two current controlled conveyors (CCCII, and one resistor and one capacitor that are both grounded. The errors related to the signal processing and errors bound were investigated and presented in the paper. The PSpice simulation and experimental results are depicted, and agree well with the theoretical anticipation. The measurement results show that the scheme improves the accuracy of the detector to better than 0.04 % and wide operating frequency range from 50 Hz to 10 MHz. The maximum power consumption of the detector is approximately 5.80 mW, at ±1.2 V supply voltages.

  6. High voltage conditioning of the electrostatic deflector of MARA

    Science.gov (United States)

    Partanen, J.; Johansen, U.; Sarén, J.; Tuunanen, J.; Uusitalo, J.

    2016-06-01

    MARA is a new recoil mass separator in the Accelerator Laboratory of University of Jyväskylä (JYFL-ACCLAB) with a mass resolving power of 250 and an ion-optical configuration of QQQDEDM . In this paper the construction, control and conditioning of its electrostatic deflector are described. The deflector was designed for voltages up to 500 kV accross the gap, corresponding to a 3.6 MV/m field, to accomodate fusion reactions with inverse kinematics. Titanium electrodes with a beam dump opening in the anode are used. The conditioning procedure, which has been used repeatedly to take the deflector to 450 kV, is described, along with the safety systems and precautions that are in place.

  7. Interface high-temperature superconductivity

    Science.gov (United States)

    Wang, Lili; Ma, Xucun; Xue, Qi-Kun

    2016-12-01

    Cuprate high-temperature superconductors consist of two quasi-two-dimensional (2D) substructures: CuO2 superconducting layers and charge reservoir layers. The superconductivity is realized by charge transfer from the charge reservoir layers into the superconducting layers without chemical dopants and defects being introduced into the latter, similar to modulation-doping in the semiconductor superlattices of AlGaAs/GaAs. Inspired by this scheme, we have been searching for high-temperature superconductivity in ultra-thin films of superconductors epitaxially grown on semiconductor/oxide substrates since 2008. We have observed interface-enhanced superconductivity in both conventional and unconventional superconducting films, including single atomic layer films of Pb and In on Si substrates and single unit cell (UC) films of FeSe on SrTiO3 (STO) substrates. The discovery of high-temperature superconductivity with a superconducting gap of ∼20 meV in 1UC-FeSe/STO has stimulated tremendous interest in the superconductivity community, for it opens a new avenue for both raising superconducting transition temperature and understanding the pairing mechanism of unconventional high-temperature superconductivity. Here, we review mainly the experimental progress on interface-enhanced superconductivity in the three systems mentioned above with emphasis on 1UC-FeSe/STO, studied by scanning tunneling microscopy/spectroscopy, angle-resolved photoemission spectroscopy and transport experiments. We discuss the roles of interfaces and a possible pairing mechanism inferred from these studies.

  8. High-Temperature Optical Sensor

    Science.gov (United States)

    Adamovsky, Grigory; Juergens, Jeffrey R.; Varga, Donald J.; Floyd, Bertram M.

    2010-01-01

    A high-temperature optical sensor (see Figure 1) has been developed that can operate at temperatures up to 1,000 C. The sensor development process consists of two parts: packaging of a fiber Bragg grating into a housing that allows a more sturdy thermally stable device, and a technological process to which the device is subjected to in order to meet environmental requirements of several hundred C. This technology uses a newly discovered phenomenon of the formation of thermally stable secondary Bragg gratings in communication-grade fibers at high temperatures to construct robust, optical, high-temperature sensors. Testing and performance evaluation (see Figure 2) of packaged sensors demonstrated operability of the devices at 1,000 C for several hundred hours, and during numerous thermal cycling from 400 to 800 C with different heating rates. The technology significantly extends applicability of optical sensors to high-temperature environments including ground testing of engines, flight propulsion control, thermal protection monitoring of launch vehicles, etc. It may also find applications in such non-aerospace arenas as monitoring of nuclear reactors, furnaces, chemical processes, and other hightemperature environments where other measurement techniques are either unreliable, dangerous, undesirable, or unavailable.

  9. The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operation

    Science.gov (United States)

    Hashemi, Adeleh; Bahari, Ali; Ghasemi, Shahram

    2017-09-01

    In this work, povidone/silica nanocomposite dielectric layers were deposited on the n-type Si (100) substrates for application in n-type silicon field-effect transistors (FET). Thermogravimetric analysis (TGA) indicated that strong chemical interactions between polymer and silica nanoparticles were created. In order to examine the effect of annealing temperatures on chemical interactions and nanostructure properties, annealing process was done at 423-513 K. Atomic force microscopy (AFM) images show the very smooth surfaces with very low surface roughness (0.038-0.088 nm). The Si2p and C1s core level photoemission spectra were deconvoluted to the chemical environments of Si and C atoms respectively. The obtained results of deconvoluted X-ray photoelectron spectroscopy (XPS) spectra revealed a high percentage of silanol hydrogen bonds in the sample which was not annealed. These bonds were inversed to stronger covalence bonds (siloxan bonds) at annealing temperature of 423 K. By further addition of temperature, siloxan bonds were shifted to lower binding energy of about 1 eV and their intensity were abated at annealing temperature of 513 K. The electrical characteristics were extracted from current-Voltage (I-V) and capacitance-voltage (C-V) measurements in metal-insulator-semiconductor (MIS) structure. The all n-type Si transistors showed very low threshold voltages (-0.24 to 1 V). The formation of the strongest cross-linking at nanostructure of dielectric film annealed at 423 K caused resulted in an un-trapped path for the transport of charge carriers yielding the lowest threshold voltage (0.08 V) and the highest electron mobility (45.01 cm2/V s) for its FET. By increasing the annealing temperature (473 and 513 K) on the nanocomposite dielectric films, the values of the average surface roughness, the capacitance and the FET threshold voltage increased and the value of FET electron field-effect mobility decreased.

  10. Electrooptic Methods for Measurement of Small DC Currents at High Voltage Level

    DEFF Research Database (Denmark)

    Tønnesen, Ole; Beatty, Neville; Skilbreid, Asbjørn Ottar

    1989-01-01

    . The measuring methods can be used both for development and supervision of electrical insulating systems. For DC measurements a system wherein the voltage is applied (across the Pockels cell) not directly but via an electrooptic circuit was developed. This circuit periodically inverts the polarity of the voltage...... fibre to an electrooptic converter. Second, by use of an electronic circuit the measured signal can be converted into a modulated frequency form for transmission along an optical fibre. These systems are described, measurement results are presented and improvements to be made in the future are outlined...... across the cell, effectively applying a square wave voltage with amplitude equal to the DC voltage to be measured. The switching circuit is based around two high voltage transistors TA, TB, with the Pockels cell electrodes being each connected to one of the transistor collectors. The transistor...

  11. High temperature superconductor current leads

    Energy Technology Data Exchange (ETDEWEB)

    Hull, John R. (Hinsdale, IL); Poeppel, Roger B. (Glen Ellyn, IL)

    1995-01-01

    An electrical lead having one end for connection to an apparatus in a cryogenic environment and the other end for connection to an apparatus outside the cryogenic environment. The electrical lead includes a high temperature superconductor wire and an electrically conductive material distributed therein, where the conductive material is present at the one end of the lead at a concentration in the range of from 0 to about 3% by volume, and at the other end of the lead at a concentration of less than about 20% by volume. Various embodiments are shown for groups of high temperature superconductor wires and sheaths.

  12. High temperature polymer matrix composites

    Science.gov (United States)

    Serafini, Tito T. (Editor)

    1987-01-01

    These are the proceedings of the High Temperature Polymer Matrix Composites Conference held at the NASA Lewis Research Center on March 16 to 18, 1983. The purpose of the conference is to provide scientists and engineers working in the field of high temperature polymer matrix composites an opportunity to review, exchange, and assess the latest developments in this rapidly expanding area of materials technology. Technical papers are presented in the following areas: (1) matrix development; (2) adhesive development; (3) Characterization; (4) environmental effects; and (5) applications.

  13. High temperature corrosion in gasifiers

    Directory of Open Access Journals (Sweden)

    Bakker Wate

    2004-01-01

    Full Text Available Several commercial scale coal gasification combined cycle power plants have been built and successfully operated during the last 5-10 years. Supporting research on materials of construction has been carried out for the last 20 years by EPRI and others. Emphasis was on metallic alloys for heat exchangers and other components in contact with hot corrosive gases at high temperatures. In this paper major high temperature corrosion mechanisms, materials performance in presently operating gasifiers and future research needs will be discussed.

  14. An Annotated Bibliography of High-Voltage Direct-Current Transmission and Flexible AC Transmission (FACTS) Devices, 1991-1993.

    Energy Technology Data Exchange (ETDEWEB)

    Litzenberger, Wayne; Lava, Val

    1994-08-01

    References are contained for HVDC systems, converter stations and components, overhead transmission lines, cable transmission, system design and operations, simulation of high voltage direct current systems, high-voltage direct current installations, and flexible AC transmission system (FACTS).

  15. Insulation co-ordination in high-voltage electric power systems

    CERN Document Server

    Diesendorf, W

    2015-01-01

    Insulation Co-ordination in High-Voltage Electric Power Systems deals with the methods of insulation needed in different circumstances. The book covers topics such as overvoltages and lightning surges; disruptive discharge and withstand voltages; self-restoring and non-self-restoring insulation; lightning overvoltages on transmission lines; and the attenuation and distortion of lightning surges. Also covered in the book are topics such as the switching surge designs of transmission lines, as well as the insulation coordination of high-voltage stations. The text is recommended for electrical en

  16. A high-speed CMOS current op amp for very low supply voltage operation

    DEFF Research Database (Denmark)

    Bruun, Erik

    1994-01-01

    A CMOS implementation of a high-gain current mode operational amplifier (op amp) with a single-ended input and a differential output is described. This configuration is the current mode counterpart of the traditional voltage mode op amp. In order to exploit the inherent potential for high speed......, low voltage operation normally associated with current mode analog signal processing, the op amp has been designed to operate off a supply voltage of 1.5 V, and the signal path has been confined to N-channel transistors. With this design, a gain of 94 dB and a gain-bandwidth product of 65 MHz has been...

  17. Development of high voltage dc transmission at Siemens Schuckertwerke up to 1945

    Energy Technology Data Exchange (ETDEWEB)

    Bosch, M.; Schiele, O.

    1966-09-01

    High voltage dc affords advantages over three phase ac in the transmission of power over long distances and over cables, and in the coupling of three phase systems. Mercury arc rectifiers and equipment for dc voltages from 100 to 200 kV were developed and put into service in the period between 1937 and 1945. A few years ago a high voltage dc transmission group was formed by AEG, BBC and Siemens to continue the work interrupted at the end of the war.

  18. High Voltage Bidirectional Flyback Converter Driving DEAP Actuator for Automotive Applications

    DEFF Research Database (Denmark)

    Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.;

    2013-01-01

    DEAP (Dielectric Electro Active Polymer) is a new type of smart material. The actuator based on DEAP material tends to be applied in a variety of occasions. It will have prosperous future when employed in automotive field. This paper is focused on the design and implementation of a low input volt...... voltage and high output voltage bidirectional converter for driving the DEAP actuator. The detailed design and implemented parameters have been summarized, especially for the high voltage transformer. The experiments have been performed to validate the design and implementation....

  19. Study of Energy Losses in High-Voltage Induction Motor Electric Drive

    Directory of Open Access Journals (Sweden)

    Svilen Rachev

    2016-10-01

    Full Text Available The dynamic behavior during operation of the high-voltage induction motor electric drive has been studied by means of mathematical model developed. The purpose is to draw out more clearly picture of operation of high-voltage induction motor drives. The system of differential equations has been transformed and solved using suitable software. As a result the values of the energy losses components in the induction motor have been obtained according to different values of supply voltage and factor of inertia. Some of the study results have been presented graphically. An analysis has been made and conclusions from the results obtained have been done.

  20. Nonlinear plasmonics at high temperatures

    CERN Document Server

    Sivan, Yonatan

    2016-01-01

    We solve the Maxwell and heat equations self-consistently for metal nanoparticles under intense continuous wave (CW) illumination. Unlike previous studies, we rely on {\\em experimentally}-measured data for the metal permittivity for increasing temperature and for the visible spectral range. We show that the thermal nonlinearity of the metal can lead to substantial deviations from the predictions of the linear model for the temperature and field distribution, and thus, can explain qualitatively the strong nonlinear scattering from such configurations observed experimentally. We also show that the incompleteness of existing data of the temperature dependence of the thermal properties of the system prevents reaching a quantitative agreement between the measured and calculated scattering data. This modelling approach is essential for the identification of the underlying physical mechanism responsible for the thermo-optical nonlinearity of the metal and should be adopted in all applications of high temperature non...

  1. Nonlinear plasmonics at high temperatures

    Directory of Open Access Journals (Sweden)

    Sivan Yonatan

    2017-01-01

    Full Text Available We solve the Maxwell and heat equations self-consistently for metal nanoparticles under intense continuous wave (CW illumination. Unlike previous studies, we rely on experimentally-measured data for metal permittivity for increasing temperature and for the visible spectral range. We show that the thermal nonlinearity of the metal can lead to substantial deviations from the predictions of the linear model for the temperature and field distribution and, thus, can explain qualitatively the strong nonlinear scattering from such configurations observed experimentally. We also show that the incompleteness of existing data of the temperature dependence of the thermal properties of the system prevents reaching a quantitative agreement between the measured and calculated scattering data. This modeling approach is essential for the identification of the underlying physical mechanism responsible for the thermo-optical nonlinearity of the metal and should be adopted in all applications of high-temperature nonlinear plasmonics, especially for refractory metals, for both CW and pulsed illumination.

  2. Nonlinear plasmonics at high temperatures

    Science.gov (United States)

    Sivan, Yonatan; Chu, Shi-Wei

    2017-01-01

    We solve the Maxwell and heat equations self-consistently for metal nanoparticles under intense continuous wave (CW) illumination. Unlike previous studies, we rely on experimentally-measured data for metal permittivity for increasing temperature and for the visible spectral range. We show that the thermal nonlinearity of the metal can lead to substantial deviations from the predictions of the linear model for the temperature and field distribution and, thus, can explain qualitatively the strong nonlinear scattering from such configurations observed experimentally. We also show that the incompleteness of existing data of the temperature dependence of the thermal properties of the system prevents reaching a quantitative agreement between the measured and calculated scattering data. This modeling approach is essential for the identification of the underlying physical mechanism responsible for the thermo-optical nonlinearity of the metal and should be adopted in all applications of high-temperature nonlinear plasmonics, especially for refractory metals, for both CW and pulsed illumination.

  3. Project resumes: biological effects from electric fields associated with high-voltage transmission lines

    Energy Technology Data Exchange (ETDEWEB)

    None

    1980-01-01

    Abstracts of research projects are presented in the following areas: measurements and special facilities; cellular and subcellular studies; physiology; behavior; environmental effects; modeling, scaling and dosimetry; and high voltage direct current. (ACR)

  4. A prototype of a high-voltage platform for the KRION ion source

    Science.gov (United States)

    Alexandrov, V. S.; Donets, E. E.; Konnov, G. I.; Kosukhin, V. V.; Sidorova, V. O.; Sidorov, A. I.; Shvetsov, V. S.; Trubnikov, G. V.

    2014-09-01

    A high-voltage platform that has been developed for the KRION ion source is described. The platform design concept is explained. The calculations that have been performed of the influence of the design and materials on the source magnetic field make it possible to define a range of materials suitable for manufacturing the platform. The major components of the high-voltage platform, such as a high-voltage power supplier, and decoupling insulators of the high-voltage power source, and the main and supplementary platforms, are chosen and described. It is determined that, to exclude electric breakdowns and corona discharges, one should use an electrically shielded channel with a cryocooler and power supplies for the KRION-source coupling cables.

  5. HIGH VOLTAGE ENVIRONMENTAL APPLICATIONS, INC.ELECTRON BEAM TECHNOLOGY - INNOVATIVE TECHNOLOGY EVALUATION REPORT

    Science.gov (United States)

    This report evaluates a high-voltage electron beam (E-beam) technology's ability to destroy volatile organic compounds (VOCs) and other contaminants present in liquid wastes. Specifically, this report discusses performance and economic data from a Superfund Innovative Technology...

  6. Circuits protection against interferences in high voltage substations; Protecao de circuitos contra interferencias em subestacoes

    Energy Technology Data Exchange (ETDEWEB)

    Hamada, Massayuki [Consultas e Aplicacoes de Engenharia Eletrica Ltda. (CAEEL) (Brazil)

    1989-12-01

    This paper makes a brief analysis of the different phenomena which may cause electromagnetic interference in high voltage substations and suggests adequate solutions to the problem according to the different events that may occur. 5 refs., 1 fig.

  7. Lithium-Ion Electrolytes with Improved Safety Tolerance to High Voltage Systems

    Science.gov (United States)

    Smart, Marshall C. (Inventor); Bugga, Ratnakumar V. (Inventor); Prakash, Surya G. (Inventor); Krause, Frederick C. (Inventor)

    2015-01-01

    The invention discloses various embodiments of electrolytes for use in lithium-ion batteries, the electrolytes having improved safety and the ability to operate with high capacity anodes and high voltage cathodes. In one embodiment there is provided an electrolyte for use in a lithium-ion battery comprising an anode and a high voltage cathode. The electrolyte has a mixture of a cyclic carbonate of ethylene carbonate (EC) or mono-fluoroethylene carbonate (FEC) co-solvent, ethyl methyl carbonate (EMC), a flame retardant additive, a lithium salt, and an electrolyte additive that improves compatibility and performance of the lithium-ion battery with a high voltage cathode. The lithium-ion battery is charged to a voltage in a range of from about 2.0 V (Volts) to about 5.0 V (Volts).

  8. FEA identification of high order generalized equivalent circuits for MF high voltage transformers

    CERN Document Server

    Candolfi, Sylvain; Cros, Jérôme; Aguglia, Davide

    2015-01-01

    This paper presents a specific methodology to derive high order generalized equivalent circuits from electromagnetic finite element analysis for high voltage medium frequency and pulse transformers by splitting the main windings in an arbitrary number of elementary windings. With this modeling approach, the dynamic model of the transformer over a large bandwidth is improved and the order of the generalized equivalent circuit can be adapted to a specified bandwidth. This efficient tool can be used by the designer to quantify the influence of the local structure of transformers on their dynamic behavior. The influence of different topologies and winding configurations is investigated. Several application examples and an experimental validation are also presented.

  9. Leakage current and stability of acrylic elastomer subjected to high DC voltage

    Science.gov (United States)

    Hammami, S.; Jean-Mistral, C.; Jomni, F.; Gallot-Lavallée, O.; Rain, P.; Yangui, B.; Sylvestre, A.

    2015-04-01

    Dielectric elastomers such as 3M VHB4910 acrylate film have been widely used for electromechanical energy conversion such as actuators, sensors and generators, due to their lightweight, high efficiency, low cost and high energy density. Mechanical and electric properties of such materials have been deeply investigated according to various parameters (temperature, frequency, pre-stress, nature of the compliant electrodes…). Models integrating analytic laws deduced from experiments increase their accuracy. Nevertheless, leakage current and electrical breakdown reduce the efficiency and the lifetime of devices made with these polymers. These two major phenomena are not deeply investigated in the literature. Thus, this paper describes the current-voltage characteristics of acrylate 3M VHB4910 and investigates the stability of the current under high electric field (kV) for various temperatures (from 20°C to 80°C) and over short (300 s) and long (12h) periods. Experimental results show that, with gold electrodes at ambient temperature, the current decreases with time to a stable value corresponding to the conduction current. This decrease occurs during 6 hours, whereas in the literature values of current at short time (less than 1 hour) are generally reported. This decrease can be explained by relaxations mechanisms in the polymer. Schottky emission and Poole-Frenkel emission are both evaluated to explain the leakage current. It emerges from this study that the Schottky effect constitutes the main mechanism of electric current in the 3M VHB4910. For high temperatures, the steady state is reached quickly. To end, first results on the leakage current changes for pre-stretch VHB4910 complete this study.

  10. Very Low Power, Low Voltage, High Accuracy, and High Performance Current Mirror

    Institute of Scientific and Technical Information of China (English)

    Hassan Faraji Baghtash; Khalil Monfaredi; Ahmad Ayatollahi

    2011-01-01

    A novel low power and low voltage current mirror with a very low current copy error is presented and the principle of its operation is discussed.In this circuit,the gain boosting regulated cascode scheme is used to improve the output resistance,while using inverter as an amplifier.The simulation results with HSPICE in TSMC 0.18 μm CMOS technology are given,which verify the high performance of the proposed structure.Simulation results show an input resistance of 0.014 Ω and an output resistance of 3 GΩ.The current copy error is favorable as low as 0.002% together with an input (the minimum input voltage of vin,min~ 0.24 V) and an output (the minimum output voltage of vout,min~ 0.16 V) compliances while working with the 1 V power supply and the 50 μA input current.The current copy error is near zero at the input current of 27 μA.It consumes only 76 μW and introduces a very low output offset current of 50 pA.

  11. Voltage-pulsed and laser-pulsed atom probe tomography of a multiphase high-strength low-carbon steel.

    Science.gov (United States)

    Mulholland, Michael D; Seidman, David N

    2011-12-01

    The differences in artifacts associated with voltage-pulsed and laser-pulsed (wavelength = 532 or 355 nm) atom-probe tomographic (APT) analyses of nanoscale precipitation in a high-strength low-carbon steel are assessed using a local-electrode atom-probe tomograph. It is found that the interfacial width of nanoscale Cu precipitates increases with increasing specimen apex temperatures induced by higher laser pulse energies (0.6-2 nJ pulse(-1) at a wavelength of 532 nm). This effect is probably due to surface diffusion of Cu atoms. Increasing the specimen apex temperature by using pulse energies up to 2 nJ pulse(-1) at a wavelength of 532 nm is also found to increase the severity of the local magnification effect for nanoscale M2C metal carbide precipitates, which is indicated by a decrease of the local atomic density inside the carbides from 68 ± 6 nm(-3) (voltage pulsing) to as small as 3.5 ± 0.8 nm(-3). Methods are proposed to solve these problems based on comparisons with the results obtained from voltage-pulsed APT experiments. Essentially, application of the Cu precipitate compositions and local atomic density of M2C metal carbide precipitates measured by voltage-pulsed APT to 532 or 355 nm wavelength laser-pulsed data permits correct quantification of precipitation.

  12. AC Voltage Control of DC/DC Converters Based on Modular Multilevel Converters in Multi-Terminal High-Voltage Direct Current Transmission Systems

    Directory of Open Access Journals (Sweden)

    Rui Li

    2016-12-01

    Full Text Available The AC voltage control of a DC/DC converter based on the modular multilevel converter (MMC is considered under normal operation and during a local DC fault. By actively setting the AC voltage according to the two DC voltages of the DC/DC converter, the modulation index can be near unity, and the DC voltage is effectively utilized to output higher AC voltage. This significantly decreases submodule (SM capacitance and conduction losses of the DC/DC converter, yielding reduced capital cost, volume, and higher efficiency. Additionally, the AC voltage is limited in the controllable range of both the MMCs in the DC/DC converter; thus, over-modulation and uncontrolled currents are actively avoided. The AC voltage control of the DC/DC converter during local DC faults, i.e., standby operation, is also proposed, where only the MMC connected on the faulty cable is blocked, while the other MMC remains operational with zero AC voltage output. Thus, the capacitor voltages can be regulated at the rated value and the decrease of the SM capacitor voltages after the blocking of the DC/DC converter is avoided. Moreover, the fault can still be isolated as quickly as the conventional approach, where both MMCs are blocked and the DC/DC converter is not exposed to the risk of overcurrent. The proposed AC voltage control strategy is assessed in a three-terminal high-voltage direct current (HVDC system incorporating a DC/DC converter, and the simulation results confirm its feasibility.

  13. High-temperature Titanium Alloys

    Directory of Open Access Journals (Sweden)

    A.K. Gogia

    2005-04-01

    Full Text Available The development of high-temperature titanium alloys has contributed significantly to the spectacular progress in thrust-to-weight ratio of the aero gas turbines. This paper presents anoverview on the development of high-temperature titanium alloys used in aero engines and potential futuristic materials based on titanium aluminides and composites. The role of alloychemistry, processing, and microstructure, in determining the mechanical properties of titanium alloys is discussed. While phase equilibria and microstructural stability consideration haverestricted the use of conventional titanium alloys up to about 600 "C, alloys based on TiPl (or,, E,AINb (0, TiAl (y, and titaniumltitanium aluminides-based composites offer a possibility ofquantum jump in the temperature capability of titanium alloys.

  14. Analysis of predictor factors of limb amputation in patients with high-voltage electrical burns

    OpenAIRE

    2015-01-01

    Background: Limb amputation is considered one of the most devastating consequences of electrical injury. Any factors that correlate with the degree of muscle damage can be used to predict the necessity of limb amputation. The aim of this study was to determine the factors that can be used to predict limb amputation in high-voltage electrically injured patients. Methods: Eighty-two high-voltage electrically injured patients were admitted to the Department of Plastic and Reconstructive Surg...

  15. Review of the Dynamics of Coalescence and Demulsification by High-Voltage Pulsed Electric Fields

    OpenAIRE

    Ye Peng; Tao Liu; Haifeng Gong; Xianming Zhang

    2016-01-01

    The coalescence of droplets in oil can be implemented rapidly by high-voltage pulse electric field, which is an effective demulsification dehydration technological method. At present, it is widely believed that the main reason of pulse electric field promoting droplets coalescence is the dipole coalescence and oscillation coalescence in pulse electric field, and the optimal coalescence pulse electric field parameters exist. Around the above content, the dynamics of high-voltage pulse electric...

  16. Study of the interaction between space plasma and high voltage solar array

    OpenAIRE

    Iwasa, Minoru; TANAKA, KOJI; Sasaki, Susumu; ODAWARA, OSAMU; 岩佐 稔; 田中 孝治; 佐々木 進; 小田原 修

    2006-01-01

    We are studying the problems associated with high voltage power systems in space. Especially we are interested in the potential distribution of the solar array that is resistant to the electrical discharge. We have carried out experiment on the interaction between the space plasma and the high voltage solar array. An array of electrodes distributed on a dielectric material was used to simulate the inter-connectors of the solar array panel in space environment. One of major concerns in the usa...

  17. Study of the plasma interference with high voltage electrode array for space power application

    OpenAIRE

    Iwasa, Minoru; TANAKA, KOJI; Sasaki, Susumu; ODAWARA, OSAMU; 岩佐 稔; 田中 孝治; 佐々木 進; 小田原 修

    2005-01-01

    We are studying the problems associated with high voltage power systems in space. Especially we are interested in the potential distribution of the solar array that is resistant to the electrical discharge. We have carried out experiments on the interaction between the high voltage solar array and the ambient plasma. In the experiment, an array of electrodes distributed on the insulation panel was used to simulate the inter-connectors of the solar array. An electrode array without the insulat...

  18. Finite Element Based Optimal Design Approach for High Voltage Pulse Transformers

    CERN Document Server

    Aguglia, D; Viarouge, P; Cros, J

    2014-01-01

    This paper presents an optimal design methodology of monolithic high voltage pulse transformers based on the direct 2D FEA identification of the electrical equivalent circuit parameters. This method is applied to the preliminary optimal design of the monolithic high voltage pulse transformer for the future CLIC modulators under study at CERN. The feasibility of such a transformer with tight specifications is demonstrated. The predicted performances obtained with the direct 2D FEA optimization process is validated by 3D FEA simulation.

  19. Static Electricity as Part of Electromagnetic Environment on High-Voltage Electrical Substation

    Directory of Open Access Journals (Sweden)

    M. Fursanov

    2012-01-01

    Full Text Available Causes of occurrences electrostatic discharges (ESD on high-voltage electric substation were investigated and dependences values ESD’s on parameters interaction structures, humidity of air were found. Experimental research values ESD’s on high-voltage electric substation and in man-made conditions was fulfilled. Uncertainty measurement’s was taken into consideration by research results analyze. Matching with research of other authors was made. Danger ESD’s for electric devises was established.

  20. Voltage gating by molecular subunits of Na+ and K+ ion channels: higher-dimensional cubic kinetics, rate constants, and temperature.

    Science.gov (United States)

    Fohlmeister, Jürgen F

    2015-06-01

    The structural similarity between the primary molecules of voltage-gated Na and K channels (alpha subunits) and activation gating in the Hodgkin-Huxley model is brought into full agreement by increasing the model's sodium kinetics to fourth order (m(3) → m(4)). Both structures then virtually imply activation gating by four independent subprocesses acting in parallel. The kinetics coalesce in four-dimensional (4D) cubic diagrams (16 states, 32 reversible transitions) that show the structure to be highly failure resistant against significant partial loss of gating function. Rate constants, as fitted in phase plot data of retinal ganglion cell excitation, reflect the molecular nature of the gating transitions. Additional dimensions (6D cubic diagrams) accommodate kinetically coupled sodium inactivation and gating processes associated with beta subunits. The gating transitions of coupled sodium inactivation appear to be thermodynamically irreversible; response to dielectric surface charges (capacitive displacement) provides a potential energy source for those transitions and yields highly energy-efficient excitation. A comparison of temperature responses of the squid giant axon (apparently Arrhenius) and mammalian channel gating yields kinetic Q10 = 2.2 for alpha unit gating, whose transitions are rate-limiting at mammalian temperatures; beta unit kinetic Q10 = 14 reproduces the observed non-Arrhenius deviation of mammalian gating at low temperatures; the Q10 of sodium inactivation gating matches the rate-limiting component of activation gating at all temperatures. The model kinetics reproduce the physiologically large frequency range for repetitive firing in ganglion cells and the physiologically observed strong temperature dependence of recovery from inactivation. Copyright © 2015 the American Physiological Society.