WorldWideScience

Sample records for voltage electroluminescent devices

  1. Hybrid electroluminescent devices

    Science.gov (United States)

    Shiang, Joseph John; Duggal, Anil Raj; Michael, Joseph Darryl

    2010-08-03

    A hybrid electroluminescent (EL) device comprises at least one inorganic diode element and at least one organic EL element that are electrically connected in series. The absolute value of the breakdown voltage of the inorganic diode element is greater than the absolute value of the maximum reverse bias voltage across the series. The inorganic diode element can be a power diode, a Schottky barrier diode, or a light-emitting diode.

  2. Polymer matrix electroluminescent materials and devices

    Science.gov (United States)

    Marrocco, III, Matthew L.; Motamedi, Farshad J [Claremont, CA; Abdelrazzaq, Feras Bashir [Covina, CA; Abdelrazzaq, legal representative, Bashir Twfiq

    2012-06-26

    Photoluminescent and electroluminescent compositions are provided which comprise a matrix comprising aromatic repeat units covalently coordinated to a phosphorescent or luminescent metal ion or metal ion complexes. Methods for producing such compositions, and the electroluminescent devices formed therefrom, are also disclosed.

  3. Enhanced luminance for inorganic electroluminescent devices with a charged electret

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw [Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC (China); Chen, Kuo-Feng [Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan, ROC (China); Display Technology Center/Industrial Technology Research Institute, Hsinchu 310, Taiwan, ROC (China); Chien, Yu-Han; Chang, Chin-Chia; Chuang, Meng-Ying [Display Technology Center/Industrial Technology Research Institute, Hsinchu 310, Taiwan, ROC (China)

    2013-09-15

    This work proposes a novel inorganic electroluminescent (IEL) device with an electric field built-in (EFBI) technique to reduce its driving voltage and enhance its luminance. The EFBI technique was performed by charging an electret comprising a silicon dioxide film at different temperatures (25–150 °C) in powder electroluminescent (PDEL) devices. The driving voltage of the EFBI-PDEL device decreased by 61.4 V (or 20.5%) under the brightness of 269 cd/m{sup 2}, and its brightness increased by 128 cd/m{sup 2} (or 47%) at ac 300 V. The efficiency of the EFBI-PDEL device significantly increased by 0.827 lm/W (or 45.5%) at ac 300 V. The proposed EFBI-PDEL device has advantages of a low-temperature process and low cost, and potential for large-area display applications. -- Highlights: • An electric-field built-in powder electroluminescent (EFBI-PDEL) device is proposed. • The EFBI technique is performed by charging an electrets. • The driving voltage of the EFBI-PDEL device decreased by 20.5%. • The brightness of the EFBI-PDEL device increased by 47%. • The efficiency of the EFBI-PDEL device increased by 45.5%.

  4. A New Kind of Blue Hybrid Electroluminescent Device.

    Science.gov (United States)

    Wang, Junling; Li, Zhuan; Liu, Chunmei

    2016-04-01

    Bright blue Electroluminescence come from a ITO/BBOT doped silica (6 x 10(-3) M) made by a sol-gel method/Al driven by AC with 500 Hz at different voltages and Gaussian analysis under 55 V showed that blue emission coincidenced with typical triple emission from BBOT. This kind of device take advantage of organics (BBOT) and inorganics (silica). Electroluminescence from a single-layered sandwiched device consisting of blue fluorescent dye 2,5-bis (5-tert-butyl-2-benzoxazolyl) thiophene (BBOT) doped silica made by sol-gel method was investigated. A number of concentrations of hybrid devices were prepared and the maxium concentration was 6 x 10(-3) M. Blue electroluminescent (EL) always occurred above a threshold field 8.57 x 10(5) V/cm (30 V) at alternating voltage at 500 HZ. The luminance of the devices increased with the concentration of doped BBOT, but electroluminescence characteristics were different from a single molecule's photoluminescence properties of triple peaks. When analyzing in detail direct-current electroluminescence devices of pure BBOT, a single peak centered at 2.82 eV appeared with the driven voltage increase, which is similar to the hybrid devices. Comparing Gaussian decomposition date between two kinds of devices, the triple peak characteristic of BBOT was consistent. It is inferred that BBOT contributed EL of the hybrid devices mainly and silica may account for a very small part. Meanwhile the thermal stability of matrix silica was measured by Thermal Gravity-Mass Spectroscopy (TG-MS). There is 12 percent weight loss from room temperature to 1000 °C and silica has about 95% transmittance. So the matric silica played an important role in thermal stability and optical stability for BBOT. In addition, this kind of blue electroluminescence device can take advantages of organic materials BBOT and inorganic materials silica. This is a promising way to enrich EL devices, especially enriching inorganic EL color at a low cost.

  5. Flexible powder electroluminescent device on silver nanowire electrode

    Energy Technology Data Exchange (ETDEWEB)

    Park, K.W.; Jeong, H.S.; Park, J.H.; Deressa, G.; Jeong, Y.T.; Lim, K.T. [Department of Display Science and Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of); Park, J.H. [AIDEN company, Cheongju-si 361-911 (Korea, Republic of); Lee, S.H. [R& D Business Lab, Hyosung Corporation, Anyang 431-080 (Korea, Republic of); Kim, J.S., E-mail: jsukim@pknu.ac.kr [Department of Display Science and Engineering, Pukyong National University, Busan 608-737 (Korea, Republic of)

    2015-09-15

    We have demonstrated the flexible AC powder electroluminescent device based on Ag nanowire electrode. The Ag nanowire electrode showed the nanowire morphology of 20 nm in diameter and 15 μm in length, the transmittance of 87%, and the sheet resistance of 50 Ω/sq, and the higher flexibility than the conventional ITO substrate. The electroluminescence spectra of the Ag nanowire-based device in all frequency and voltage ranges were almost similar with the ITO-based device. In comparison with the ITO-based device, the luminous efficiency of the Ag nanowire-based device was almost same as 1.53 lm/W. - Highlights: • Flexibility of Ag NW substrate was higher than ITO substrate. • EL intensity of Ag NW-based EL device was almost similar with ITO-based EL device. • Charge density and turn-on voltage of Ag NW-based EL device were a little larger than ITO-based EL device.

  6. Flexible powder electroluminescent device on silver nanowire electrode

    International Nuclear Information System (INIS)

    Park, K.W.; Jeong, H.S.; Park, J.H.; Deressa, G.; Jeong, Y.T.; Lim, K.T.; Park, J.H.; Lee, S.H.; Kim, J.S.

    2015-01-01

    We have demonstrated the flexible AC powder electroluminescent device based on Ag nanowire electrode. The Ag nanowire electrode showed the nanowire morphology of 20 nm in diameter and 15 μm in length, the transmittance of 87%, and the sheet resistance of 50 Ω/sq, and the higher flexibility than the conventional ITO substrate. The electroluminescence spectra of the Ag nanowire-based device in all frequency and voltage ranges were almost similar with the ITO-based device. In comparison with the ITO-based device, the luminous efficiency of the Ag nanowire-based device was almost same as 1.53 lm/W. - Highlights: • Flexibility of Ag NW substrate was higher than ITO substrate. • EL intensity of Ag NW-based EL device was almost similar with ITO-based EL device. • Charge density and turn-on voltage of Ag NW-based EL device were a little larger than ITO-based EL device

  7. Hybrid electroluminescent device based on MEH-PPV and ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Hewidy, Dina; Gadallah, A.-S.; Fattah, G. Abdel

    2017-02-15

    Hybrid organic/inorganic electroluminescent device based on the structure of glass/ITO/PEDOT:PSS/MEH-PPV/ZnO/ZnO submicrorods/Al has been manufactured. Spin coating has been used to deposit both PEDOT:PSS and MEH-PPV. Two-step process has been used to synthesis ZnO submicrorods, namely, spin coating and chemical bath deposition. Changing the dimensions of the ZnO submicrorods in this layer structure has been investigated to improve the performance of the organic/inorganic electroluminescence device. Such layer structure provides electroluminescence with narrow emission bands due to a high gain with this structure. X-ray diffraction patterns and scanning electron microscope images show that ZnO submicrorods have hexagon structure. Current-voltage curve for the structure has been reported. Electroluminescence curves (electroluminescence intensity versus wavelength) at different bias voltages have been presented and these results show narrowing in full width at half maximum in the spectra at high current density compared to photoluminescence excitation. The narrowing in the spectrum has been explained. - Highlights: • Manufacturing of MEH-PPV and ZnO electroluminescent device has been reported. • Spin coating and chemical bath deposition have been used for preparation of ZnO. • SEM images and X-ray diffraction of ZnO have been presented. • Current-voltage curves and electroluminescent measurements have been reported.

  8. Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

    Science.gov (United States)

    Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

    2003-06-01

    White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

  9. Progress and Prospects in Stretchable Electroluminescent Devices

    Directory of Open Access Journals (Sweden)

    Wang Jiangxin

    2017-03-01

    Full Text Available Stretchable electroluminescent (EL devices are a new form of mechanically deformable electronics that are gaining increasing interests and believed to be one of the essential technologies for next generation lighting and display applications. Apart from the simple bending capability in flexible EL devices, the stretchable EL devices are required to withstand larger mechanical deformations and accommodate stretching strain beyond 10%. The excellent mechanical conformability in these devices enables their applications in rigorous mechanical conditions such as flexing, twisting, stretching, and folding.The stretchable EL devices can be conformably wrapped onto arbitrary curvilinear surface and respond seamlessly to the external or internal forces, leading to unprecedented applications that cannot be addressed with conventional technologies. For example, they are in demand for wide applications in biomedical-related devices or sensors and soft interactive display systems, including activating devices for photosensitive drug, imaging apparatus for internal tissues, electronic skins, interactive input and output devices, robotics, and volumetric displays. With increasingly stringent demand on the mechanical requirements, the fabrication of stretchable EL device is encountering many challenges that are difficult to resolve. In this review, recent progresses in the stretchable EL devices are covered with a focus on the approaches that are adopted to tackle materials and process challenges in stretchable EL devices and delineate the strategies in stretchable electronics. We first introduce the emission mechanisms that have been successfully demonstrated on stretchable EL devices. Limitations and advantages of the different mechanisms for stretchable EL devices are also discussed. Representative reports are reviewed based on different structural and material strategies. Unprecedented applications that have been enabled by the stretchable EL devices are

  10. Organic electroluminescence

    CERN Document Server

    Kafafi, Zakya H

    2005-01-01

    Organic light-emitting diode(OLED) technology has achieved significant penetration in the commercial market for small, low-voltage and inexpensive displays. Present and future novel technologies based on OLEDs involve rigid and flexible flat panel displays, solid-state lighting, and lasers. Display applications may range from hand-held devices to large flat panel screens that can be rolled up or hung flat on a wall or a ceiling. Organic Electroluminescence gives an overview of the on-going research in the field of organic light-emitting materials and devices, covering the principles of electroluminescence in organic thin films, as well as recent trends, current applications, and future potential uses. The book begins by giving a background of organic electroluminescence in terms of history and basic principles. It offers details on the mechanism(s) of electroluminescence in thin organic films. It presentsin-depth discussions of the parameters that control the external electroluminescence quantum efficien...

  11. Electroluminescence

    CERN Document Server

    Henisch, H K

    1962-01-01

    Electroluminescence deals with the multiplicity of forms related to electroluminescence phenomena. The book reviews some basic observations of electroluminescence, the Gudden-Pohl and Dechene effects, the electroluminescence phenomena in zinc sulfide phosphors, in silicon carbide, and in compounds composed of elements in groups III and V of the Periodic Table (such as gallium phosphide). The text also explains polarization of free charge carriers, the outline of junction breakdown theory, carrier recombination, and phosphor suspensions. The book describes the growth of zinc sulfide crystals (f

  12. Enhancing light emission in flexible AC electroluminescent devices by tetrapod-like zinc oxide whiskers.

    Science.gov (United States)

    Wen, Li; Liu, Nishuang; Wang, Siliang; Zhang, Hui; Zhao, Wanqiu; Yang, Zhichun; Wang, Yumei; Su, Jun; Li, Luying; Long, Fei; Zou, Zhengguang; Gao, Yihua

    2016-10-03

    Flexible alternating current electroluminescent devices (ACEL) are more and more popular and widely used in liquid-crystal display back-lighting, large-scale architectural and decorative lighting due to their uniform light emission, low power consumption and high resolution. However, presently how to acquire high brightness under a certain voltage are confronted with challenges. Here, we demonstrate an electroluminescence (EL) enhancing strategy that tetrapod-like ZnO whiskers (T-ZnOw) are added into the bottom electrode of carbon nanotubes (CNTs) instead of phosphor layer in flexible ACEL devices emitting blue, green and orange lights, and the brightness is greatly enhanced due to the coupling between the T-ZnOw and ZnS phosphor dispersed in the flexible polydimethylsiloxane (PDMS) layer. This strategy provides a new routine for the development of high performance, flexible and large-area ACEL devices.

  13. ZnO nanorod based low turn-on voltage LEDs with wide electroluminescence spectra

    International Nuclear Information System (INIS)

    Jha, S.K.; Kutsay, O.; Bello, I.; Lee, S.T.

    2013-01-01

    Light emitting diodes (LEDs) based on arrays of n-type ZnO Nanorods were fabricated on p-GaN films using a hydrothermal method. The LEDs emit mainly in blue and UV range of the light. Their current–Voltage (I–V) characteristics typically show a low leakage current (7.2 μA) and a high rectification ratio (3 5 5). Devices operate at a low turn-on voltage of ∼4.5 V. Photoluminescence (PL) and electroluminescence (EL) measurements suggest low density of ZnO defects; however, in some aspects density of interfacial defects still might be considerable in the studied devices. The PL emission is deconvoluted to three peaks that are located at wavelengths of 361, 381, and 397 nm, while the wide EL spectra are deconvoluted to five peaks appearing at 368, 385, 427, 474, and 515 nm. Near-band-edge (NBE) emission of p-GaN and n-ZnO was observed in both the PL and EL spectra. Deconvoluted EL spectra consist of a very wide green band with the peak at 515 nm and extending up to 650 nm (red), and a rarely reported EL emission at 474 nm. Origin of these emissions is discussed, herein. The electrical characteristics together with EL characteristics indicate potential to develop and study p-GaN/n-ZnO nanorod LEDs for white emitting applications. - Highlights: ► A low turn-on voltage (4–4.5 V) and low threshold (5 V) electroluminescence from ZnO/GaN heterostructure. ► A wide spectrum EL emission (360–700 nm) suitable for white LED application. ► EL spectra consist of a rarely reported emission band with peak at 474 nm. ► Low-temperature and solution based fabrication, which is scalable and of low cost.

  14. Investigation of thioglycerol stabilized ZnS quantum dots in electroluminescent device performance

    Science.gov (United States)

    Ethiraj, Anita Sagadevan; Rhen, Dani; Lee, D. H.; Kang, Dae Joon; Kulkarni, S. K.

    2016-05-01

    The present work is focused on the investigation of thioglycerol (TG) stabilized Zinc Sulfide Quantum dots (ZnS QDs) in the hybrid electroluminescence (EL) device. Optical absorption spectroscopy clearly indicates the formation of narrow size distributed ZnS in the quantum confinement regime. X-ray Diffraction (XRD), Photoluminescence (PL), Energy Dispersive X-ray Spectroscopy (EDS) data supports the same. The hybrid EL device with structure of ITO (indium tin oxide)//PEDOT:PSS ((poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate)//HTL (α NPD- N,N'-diphenyl-N,N'-bis(1-naphthyl)-(1,1'-phenyl)-4,4'-diamine// PVK:ZnS QDs//ETL(PBD- 2-tert-butylphenyl- 5-biphenyl-1,3,4-oxadiazole)//LiF:Al (Device 1) was fabricated. Reference device without the ZnS QDs were also prepared (Device 2). The results show that the ZnS QDs based device exhibited bright electroluminescence emission of 24 cd/m2 at a driving voltage of 16 Volts under the forward bias conditions as compared to the reference device without the ZnS QDs, which showed 6 cd/m2 at ˜22 Volts.

  15. Near-infrared electroluminescence from double-emission-layers devices based on Ytterbium (III) complexes

    International Nuclear Information System (INIS)

    Li Zhefeng; Zhang Hongjie; Yu Jiangbo

    2012-01-01

    We investigated near-infrared electroluminescence properties of two lanthanide complexes Yb(PMBP) 3 Bath [PMBP = tris(1-phenyl-3-methyl-4-(4-tert-butylbenzacyl)-5-pyrazolone); Bath = bathophenanthroline] and Yb(PMIP) 3 TP 2 [PMIP = tris(1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone); TP = triphenyl phosphine oxide] by fabricated the double-emission-layers devices. From the device characteristics, it is known that holes are easier to transport in Yb(PMIP) 3 TP 2 layer and electrons are easier to transport in Yb(PMBP) 3 Bath layer, at the same time, both of the two complexes can be acted as emission layers in the device. The recombination region of carriers has been confined in the interface of Yb(PMIP) 3 TP 2 /Yb(PMBP) 3 Bath, and pure Yb 3+ ion characteristic emission centered at 980 nm has been obtained. The device shows the maximum near-infrared irradiance as 14.7 mW/m 2 at the applied voltage of 17.8 V. - Highlights: ► Near-infrared electroluminescent devices with Yb(III) complexes as emission layers. ► Double-emission layer device structure introduced to balance carriers. ► Improved performance of double-emission layer device.

  16. [The role of BCP in electroluminescence of multilayer organic light-emitting devices].

    Science.gov (United States)

    Deng, Zhao-Ru; Yang, Sheng-Yi; Lou, Zhi-Dong; Meng, Ling-Chuan

    2009-03-01

    As a hole-blocking layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) is usually used in blue and white light electroluminescent devices. The ability of blocking holes of BCP layer depends on its thickness, and basically holes can tunnel through thin BCP layer. In order to know the role of BCP layer in electroluminescence (EL) of multilayer organic light-emitting diodes (OLEDs), in the present paper, the authors designed a multilayer OLED ITO/NPB/BCP/Alq3 : DCJTB/Alq3/Al and investigated the influence of thickness of BCP on the EL spectra of multilayer OLEDs at different applied voltages. The experimental data show that thin BCP layer can block holes partially and tune the energy transfer between different emissive layers, and in this way, it is easy to obtain white emission, but its EL spectra will change with the applied voltages. The EL spectra of multilayer device will remain relatively stable when BCP layer is thick enough, and the holes can hardly tunnel through when the thickness of BCP layer is more than 15 nm. Furthermore, the stability of EL spectra of the multilayer OLED at different applied voltages was discussed.

  17. Charge transfer through amino groups-small molecules interface improving the performance of electroluminescent devices

    Science.gov (United States)

    Havare, Ali Kemal; Can, Mustafa; Tozlu, Cem; Kus, Mahmut; Okur, Salih; Demic, Şerafettin; Demirak, Kadir; Kurt, Mustafa; Icli, Sıddık

    2016-05-01

    A carboxylic group functioned charge transporting was synthesized and self-assembled on an indium tin oxide (ITO) anode. A typical electroluminescent device [modified ITO/TPD (50 nm)/Alq3 (60 nm)/LiF (2 nm)/(120 nm)] was fabricated to investigate the effect of the amino groups-small molecules interface on the characteristics of the device. The increase in the surface work function of ITO is expected to facilitate the hole injection from the ITO anode to the Hole Transport Layer (HTL) in electroluminescence. The modified electroluminescent device could endure a higher current and showed a much higher luminance than the nonmodified one. For the produced electroluminescent devices, the I-V characteristics, optical characterization and quantum yields were performed. The external quantum efficiency of the modified electroluminescent device is improved as the result of the presence of the amino groups-small molecules interface.

  18. Influences on the white emission and stability of single layer electroluminescent devices

    International Nuclear Information System (INIS)

    Tekin, Emine

    2013-01-01

    A detailed survey about the influences on the white emission color of polyfluorene based polymer light emitting diodes (PLEDs) is reported. First, the effect of active layer thickness was studied. Subsequently keeping the polymer thickness at optimum level, PLEDs were fabricated varying polymer concentrations. All fabricated devices were fully characterized in terms of luminance, current–voltage characteristics, efficiencies, electroluminescent spectra, and CIE color coordinates. It was found that at higher polymer concentrations, electroluminescence spectra shifted to the bathochromic region so that the resulting color becomes warm white. Furthermore, the accelerated lifetimes of the PLEDs were measured and the results are discussed in terms of polymer inter-chain interactions. Consequently, the 8 mg/ml was found to be the optimum level not only for the device performances but also for the device lifetime. Highlights: • Influences on the white color emission of the polymer OLEDs were investigated. • White emission purity was found to be affected by the polymer concentration. • Lifetimes of the white emitting devices depend on the inter-chain interactions

  19. Electroluminescent devices based on rare-earth tetrakis β-diketonate complexes

    International Nuclear Information System (INIS)

    Quirino, W.G.; Legnani, C.; Santos, R.M.B. dos; Teixeira, K.C.; Cremona, M.; Guedes, M.A.; Brito, H.F.

    2008-01-01

    In this paper the synthesis, photoluminescence and electroluminescence investigation of the novel tetrakis β-diketonate of rare-earth complexes such as, M[Eu(dbm) 4 ] and M[Tb(acac) 4 ] with a variety of cationic ligands, M = Li + , Na + and K + have been investigated. The emission spectra of the Eu 3+ and Tb 3+ complexes displayed characteristic narrow bands arising from intraconfigurational transitions of trivalent rare-earth ions and exhibited red color emission for the Eu 3+ ion ( 5 D 0 → 7 F J , J = 0-6) and green for the Tb 3+ ion ( 5 D 4 → 7 F J , J = 6-0). The lack of the broaden emission bands arising from the ligands suggests the efficient intramolecular energy transfer from the dbm and acac ligands to Eu 3+ and Tb 3+ ions, respectively. In accordance to the expected, the values of PL quantum efficiency (η) of the emitting 5 D 0 state of the tetrakis(β-diketonate) complexes of Eu 3+ were higher compared with those tris-complexes. Therefore, organic electroluminescent (EL) devices were fabricated with the structure as follows: indium tin oxide (ITO)/hole transport layer (HTL) NPB or MTCD/emitter layer M[RE(β-diketonate) 4 ] complexes)/Aluminum (Al). All the films were deposited by thermal evaporation carried out in a high vacuum environment system. The OLED light emission was independent of driving voltage, indicating that the combination of charge carriers generates excitons within the M[RE(β-diketonate) 4 ] layers, and the energy is efficiently transferred to RE 3+ ion. As a best result, a pure red and green electroluminescent emission was observed from the Eu 3+ and Tb 3+ devices, confirmed by (X,Y) color coordinates

  20. Flexible electroluminescent device with inkjet-printed carbon nanotube electrodes

    Science.gov (United States)

    Azoubel, Suzanna; Shemesh, Shay; Magdassi, Shlomo

    2012-08-01

    Carbon nanotube (CNTs) inks may provide an effective route for producing flexible electronic devices by digital printing. In this paper we report on the formulation of highly concentrated aqueous CNT inks and demonstrate the fabrication of flexible electroluminescent (EL) devices by inkjet printing combined with wet coating. We also report, for the first time, on the formation of flexible EL devices in which all the electrodes are formed by inkjet printing of low-cost multi-walled carbon nanotubes (MWCNTs). Several flexible EL devices were fabricated by using different materials for the production of back and counter electrodes: ITO/MWCNT and MWCNT/MWCNT. Transparent electrodes were obtained either by coating a thin layer of the CNTs or by inkjet printing a grid which is composed of empty cells surrounded by MWCNTs. It was found that the conductivity and transparency of the electrodes are mainly controlled by the MWCNT film thickness, and that the dominant factor in the luminance intensity is the transparency of the electrode.

  1. Device for monitoring cell voltage

    Science.gov (United States)

    Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  2. High-Color-Quality White Top-Emitting Organic Electroluminescent Devices Based on Both Exciton and Electroplex Emission

    Science.gov (United States)

    Zhang, Mingxiao; Chen, Zhijian; Xiao, Lixin; Qu, Bo; Gong, Qihuang

    2011-08-01

    A high-color-quality white top-emitting organic electroluminescent device (TOLED) with a simple structure was fabricated using both exciton and electroplex emission. White emission was achieved by combining the exciton emission of 4,4'-bis(2,2'-diphenylvinyl)-1,1'-biphenyl (DPVBi) and the broad band emission of electroplex generated between DPVBi and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP). The white emission spectra showed excellent stability at different bias voltages. By inserting a blend film of DPVBi:BCP and adjusting the ratio of DPVBi to BCP in the blend film, the CIE coordinates of the white emission can be tuned to (0.30, 0.33) and the electroluminescence efficiency can also be enhanced.

  3. Improved luminescence properties of nanocrystalline silicon based electroluminescent device by annealing

    International Nuclear Information System (INIS)

    Sato, Keisuke; Hirakuri, Kenji

    2006-01-01

    We report an annealing effect on electrical and luminescence properties of a red electroluminescent device consisting of nanocrystalline silicon (nc-Si). The red luminescence was generated by flowing the forward current into the device at a low threshold direct current (DC) forward voltage with a rise of annealing temperature up to 500 deg. C. Moreover, the luminescence of the device annealed at 500 deg. C was more intense than that of the device annealed at 200 deg. C or less under the same forward current density, because of the injection of a large quantity of carriers to the radiative recombination centers at the nc-Si surface vicinity. These were attained by a low resistivity of indium tin oxide (ITO) electrode and good contact at the ITO electrode/luminous layer interface region by the annealing treatment. The above results indicated that the annealing treatment of the device is effective for the realization of high luminance due to the improvement in the injection efficiency of carriers to the radiative recombination centers

  4. Electroluminescent efficiency of alternating current thick film devices using ZnS:Cu,Cl phosphor

    International Nuclear Information System (INIS)

    Sharma, Gaytri; Han, Sang Do; Kim, Jung Duk; Khatkar, Satyender P.; Rhee, Young Woo

    2006-01-01

    ZnS:Cu,Cl phosphor is prepared with the help of low intensity milling of the precursor material in two step firing process. The synthesized phosphor is used for the preparation of alternating current thick film electroluminescent (ACTFEL) devices with screen-printing method. The commission international de l'Eclairge (CIE) color co-ordinates of the ACTFEL devices prepared by these phosphor layers shows a shift from bluish-green to green region with the change in the amount of Cu in the phosphor. The various parameters to improve the efficiency and luminance of the devices have also been investigated. The brightness of the ac thick film EL device depends on the particle size of the phosphor, crystallinity, amount of binding material and applied voltage. The EL device fabricated with phosphor having average particle size of 25 μm shows maximum luminescence, when 60% phosphor concentration is used with respect to binding material. EL intensity is also linearly dependent on frequency. It is due the increase of excitation chances of the host matrix or dopant ions with increasing frequency

  5. Fabrication and performance of ACTFEL display devices using manganese-doped zinc germanate as a green-emitting electroluminescent layer

    International Nuclear Information System (INIS)

    Kim, Joo Han; Yoon, Kyung Ho

    2010-01-01

    Alternating-current thin-film electroluminescent (ACTFEL) display devices fabricated using manganese-doped zinc germanate (Zn 2 GeO 4 :Mn) as a green-emitting electroluminescent layer material are described. The ACTFEL display devices were fabricated with a standard bottom emission structure having a multilayer stack of thin films in the metal/semiconductor/insulator/ metal (MSIM) configuration. The device was constructed on a transparent Corning glass substrate through which the emitted EL light passed. The Zn 2 GeO 4 :Mn emission layer was synthesized by using a RF magnetron sputter deposition method, followed by post-annealing at 700 .deg. C in air ambient for 1 hour. The obtained Zn 2 GeO 4 :Mn films were found to be polycrystalline with a rhombohedral crystal structure. A green emission spectrum with a maximum at approximately 538 nm was produced from the fabricated device. The chromaticity color coordinates of the EL emission were measured to be x = 0.308 and y = 0.657. The device demonstrated a sharp increase in the intensity of green EL emission upon increasing the AC peak voltage applied to the device above a threshold of 148 V.

  6. Bifunctional electroluminescent and photovoltaic devices using bathocuproine as electron-transporting material and an electron acceptor

    International Nuclear Information System (INIS)

    Chen, L.L.; Li, W.L.; Li, M.T.; Chu, B.

    2007-01-01

    Electroluminescence (EL) devices, using 4, 4',4''-tris (2-methylphenyl- phenylamino) triphenylamine (m-MTDATA) as hole-transporting material and bathocuproine (BCP) as an electron-transporting material, were fabricated, which emitted bright green light peaked at 520 nm instead of the emission of m-MTDATA or BCP. It was attributed to the exciplex formation and emission at the interface of m-MTDATA and BCP. EL performance was significantly enhanced by a thin mixed layer (5 nm) of m-MTDATA and BCP inserted between the two organic layers of the original m-MTDATA/BCP bilayer device. The trilayer device showed maximum luminance of 1,205 cd/m 2 at 8 V. At a luminance of 100 cd/m 2 , the power efficiency is 1.64 cd/A. Commission International De L'Eclairoge (CIE) color coordinates of the output spectrum of the devices at 8 V are x=0.244 and y=0.464. These devices also showed photovoltaic (PV) properties, which were sensitive to UV light. The PV diode exhibits high open-circuit voltage (V oc ) of 2.10 V under illumination of 365 nm UV light with 2 mW/cm 2 . And the short-circuit current (I sc ) of 92.5x10 -6 A/cm 2 , fill factor (FF) of 0.30 and power conversion efficiency (η e ) of 2.91% are respectively achieved. It is considered that strong exciplex emission in an EL device is a good indicator of efficient charge transfer at the organic interface, which is a basic requirement for good PV performance. Both the bilayer and trilayer devices showed EL and PV properties, suggesting their potential use as multifunction devices

  7. Bifunctional electroluminescent and photovoltaic devices using bathocuproine as electron-transporting material and an electron acceptor

    Energy Technology Data Exchange (ETDEWEB)

    Chen, L.L. [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing, 100039 (China); Institute of Functional Material Chemistry, Faculty of Chemistry, Northeast Normal University, Changchun, 130024 (China); Li, W.L. [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China)]. E-mail: wllioel@yahoo.com.cn; Li, M.T. [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing, 100039 (China); Chu, B. [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033 (China)

    2007-01-15

    Electroluminescence (EL) devices, using 4, 4',4''-tris (2-methylphenyl- phenylamino) triphenylamine (m-MTDATA) as hole-transporting material and bathocuproine (BCP) as an electron-transporting material, were fabricated, which emitted bright green light peaked at 520 nm instead of the emission of m-MTDATA or BCP. It was attributed to the exciplex formation and emission at the interface of m-MTDATA and BCP. EL performance was significantly enhanced by a thin mixed layer (5 nm) of m-MTDATA and BCP inserted between the two organic layers of the original m-MTDATA/BCP bilayer device. The trilayer device showed maximum luminance of 1,205 cd/m{sup 2} at 8 V. At a luminance of 100 cd/m{sup 2}, the power efficiency is 1.64 cd/A. Commission International De L'Eclairoge (CIE) color coordinates of the output spectrum of the devices at 8 V are x=0.244 and y=0.464. These devices also showed photovoltaic (PV) properties, which were sensitive to UV light. The PV diode exhibits high open-circuit voltage (V {sub oc}) of 2.10 V under illumination of 365 nm UV light with 2 mW/cm{sup 2}. And the short-circuit current (I {sub sc}) of 92.5x10{sup -6} A/cm{sup 2}, fill factor (FF) of 0.30 and power conversion efficiency ({eta} {sub e}) of 2.91% are respectively achieved. It is considered that strong exciplex emission in an EL device is a good indicator of efficient charge transfer at the organic interface, which is a basic requirement for good PV performance. Both the bilayer and trilayer devices showed EL and PV properties, suggesting their potential use as multifunction devices.

  8. Electroluminescence dependence on the organic thickness in ZnO nano rods/Alq3 heterostructure devices.

    Science.gov (United States)

    Kan, Pengzhi; Wang, Yongsheng; Zhao, Suling; Xu, Zheng; Wang, Dawei

    2011-04-01

    ZnO nanorods are synthesised by a hydrothermal method on ITO glass. Their crystallization and morphology are detected by XRD and SEM, respectively. The results show that the ZnO nanorod array has grown primarily along a direction aligned perpendicular to the ITO substrate. The average height and diameter of the nanorods is about 130 nm and 30 nm, respectively. Then ZnO nano rods/Alq3 heterostructure LEDs are prepared by thermal evaporation of Alq3 molecules. The thicknesses of the Alq3 layers are 130 nm, 150 nm, 170 nm and 190 nm, respectively. The electroluminescence of the devices is detected under different DC bias voltages. The exciton emission of Alq3 is detected in all devices. When the thickness of Alq3 is 130 nm, the UV electroluminescence of ZnO is around 382 nm, and defect emissions around 670 nm and 740 nm are detected. Defect emissions of ZnO nanorods are prominent. When the thickness of Alq3 increases to over 170 nm, it is difficult to observe defect emissions from the ZnO nano rods. In such devices, the exciton emission of Alq3 is more prominent than other emissions under different bias voltage.

  9. Direct Vapor Growth of Perovskite CsPbBr3 Nanoplate Electroluminescence Devices.

    Science.gov (United States)

    Hu, Xuelu; Zhou, Hong; Jiang, Zhenyu; Wang, Xiao; Yuan, Shuangping; Lan, Jianyue; Fu, Yongping; Zhang, Xuehong; Zheng, Weihao; Wang, Xiaoxia; Zhu, Xiaoli; Liao, Lei; Xu, Gengzhao; Jin, Song; Pan, Anlian

    2017-10-24

    Metal halide perovskite nanostructures hold great promises as nanoscale light sources for integrated photonics due to their excellent optoelectronic properties. However, it remains a great challenge to fabricate halide perovskite nanodevices using traditional lithographic methods because the halide perovskites can be dissolved in polar solvents that are required in the traditional device fabrication process. Herein, we report single CsPbBr 3 nanoplate electroluminescence (EL) devices fabricated by directly growing CsPbBr 3 nanoplates on prepatterned indium tin oxide (ITO) electrodes via a vapor-phase deposition. Bright EL occurs in the region near the negatively biased contact, with a turn-on voltage of ∼3 V, a narrow full width at half-maximum of 22 nm, and an external quantum efficiency of ∼0.2%. Moreover, through scanning photocurrent microscopy and surface electrostatic potential measurements, we found that the formation of ITO/p-type CsPbBr 3 Schottky barriers with highly efficient carrier injection is essential in realizing the EL. The formation of the ITO/p-type CsPbBr 3 Schottky diode is also confirmed by the corresponding transistor characteristics. The achievement of EL nanodevices enabled by directly grown perovskite nanostructures could find applications in on-chip integrated photonics circuits and systems.

  10. Photovoltaic and Electroluminescence Characters in Hybrid ZnO and Conjugated Polymer Bulk Heterojunction Devices

    Institute of Scientific and Technical Information of China (English)

    LIU Jun-Peng; QU Sheng-Chun; XU Ying; CHEN Yong-Hai; ZENG Xiang-Bo; WANG Zhi-Jie; ZHOU Hui-Ying; WANG Zhan-Guo

    2007-01-01

    We report electroluminescence in hybrid ZnO and conjugated polymer poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) bulk heterojunction photovoltaic cells. Photoluminescence quenching experimental results indicate that the ultrafast photoinduced electron transfer occurs from MDMO-PPV to ZnO under illumination. The ultrafast photoinduced electron transfer effect is induced because ZnO has an electron affinity about 1.2 eV greater than that of MDMO-PPV. Electron 'back transfer' can occur if the interfacial barrier between ZnO and MDMO-PPV can be overcome by applying a substantial electric field. Therefore, electroluminescence action due to the fact that the back transfer effect can be observed in the ZnO: MDMO-PPV devices since a forward bias is applied. The photovoltaic and electroluminescence actions in the same ZnO: MDMO-PPV device can be induced by different injection ways: photoinjection and electrical injection. The devices are expected to provide an opportunity for dual functionality devices with photovoltaic effect and electroluminescence character.

  11. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

    International Nuclear Information System (INIS)

    Lijuan Zou

    2003-01-01

    Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm 2 , the optimal radiance R could reach 0.38 mW/cm 2 , and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be ∼ 10 -5 cm 2 /Vs and ∼ 10 -4 cm 2 /Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces

  12. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

    Energy Technology Data Exchange (ETDEWEB)

    Lijuan Zou

    2003-08-05

    Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm{sup 2}, the optimal radiance R could reach 0.38 mW/cm{sup 2}, and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be {approx} 10{sup -5} cm{sup 2}/Vs and {approx} 10{sup -4} cm{sup 2}/Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces.

  13. An inorganic electroluminescent device using calcium phosphate doped with Eu{sup 3+} as the luminescent layer

    Energy Technology Data Exchange (ETDEWEB)

    Koide, Takuhiro [Department of Chemistry and Chemical Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa-shi, Yamagata 992-8510 (Japan); Ito, Michimasa [Tokai Rika Co. Ltd., 3-260 Toyota, Oguchi-cho, Niwa-gun, Aichi 480-0195 (Japan); Kawai, Takahiro [Department of Biochemical Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa-shi, Yamagata 992-8510 (Japan); Matsushima, Yuta, E-mail: ymatsush@yz.yamagata-u.ac.jp [Department of Chemistry and Chemical Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa-shi, Yamagata 992-8510 (Japan)

    2013-03-20

    Highlights: ► A thin film electroluminescent device was fabricated with a calcium phosphate as the light emitting layer. ► The light emitting layer was formed on the BaTiO{sub 3} disk by a spray pyrolysis method. ► Among the examined calcium phosphates, β-Ca{sub 3}(PO{sub 4}){sub 2}:Eu{sup 3+} showed the best photo- and electroluminescent properties. -- Abstract: In this work, the availability of calcium phosphates for the light emitting layer of a thin-film electroluminescent (TFEL) device was investigated. The goal of this work was to develop an electronic device with ordinary materials such as a calcium phosphate, the principal ingredient of the skeleton of the vertebrate. Compositions of 2CaO·P{sub 2}O{sub 5} (Ca{sub 2}P{sub 2}O{sub 7}), 3CaO·P{sub 2}O{sub 5} (Ca{sub 3}(PO{sub 4}){sub 2}) and 4CaO·P{sub 2}O{sub 5} (Ca{sub 4}O(PO{sub 4}){sub 2}) were examined as the candidates for the light emitting layer. Before composing the TFEL device, the photoluminescence (PL) properties of the three compositions were investigated in the powder form to evaluate the performance as the light emitting layer. Among the examined calcium phosphates, Eu-doped β-Ca{sub 3}(PO{sub 4}){sub 2} showed the best PL properties. It showed typical red-emission from Eu{sup 3+}. The PL intensity was enhanced with the heat-treatment temperature and the optimal temperature was 1250 °C. Then, a TFEL device was prepared by a spray pyrolysis method with the β-Ca{sub 3}(PO{sub 4}){sub 2}:Eu{sup 3+} phosphor layer on a BaTiO{sub 3} disk. The TFEL device exhibited the red emission originating in Eu{sup 3+} at 610 nm under applying alternating voltage. Different from the power sample, the intensity of EL decreased with the heat-treatment temperature from 1000 to 1250 °C. The deterioration of EL at the higher temperatures was attributed to chemical interaction between the phosphor layer and the BaTiO{sub 3} disk.

  14. Electroluminescence from a diamond device with ion-beam-micromachined buried graphitic electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Forneris, J., E-mail: jacopo.forneris@unito.it [Physics Department and NIS Interdepartmental Centre, University of Torino, Torino (Italy); Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy); Battiato, A.; Gatto Monticone, D. [Physics Department and NIS Interdepartmental Centre, University of Torino, Torino (Italy); Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy); Picollo, F. [Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy); Physics Department and NIS Interdepartmental Centre, University of Torino, Torino (Italy); Amato, G.; Boarino, L.; Brida, G.; Degiovanni, I.P.; Enrico, E.; Genovese, M.; Moreva, E.; Traina, P. [Istituto Nazionale di Ricerca Metrologica (INRiM), Torino (Italy); Verona, C.; Verona Rinati, G. [Department of Industrial Engineering, University of Roma “Tor Vergata”, Roma (Italy); Olivero, P. [Physics Department and NIS Interdepartmental Centre, University of Torino, Torino (Italy); Istituto Nazionale di Fisica Nucleare (INFN), Sez. Torino, Torino (Italy); Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia (CNISM), Sez. Torino, Torino (Italy)

    2015-04-01

    Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate the suitability of the fabrication method for the electrical excitation of color centers in diamond. Differently from photoluminescence, electroluminescence requires an electrical current flowing through the diamond sub-gap states for the excitation of the color centers. With this purpose, buried graphitic electrodes with a spacing of 10 μm were fabricated in the bulk of a detector-grade CVD single-crystal diamond sample using a scanning 1.8 MeV He{sup +} micro-beam. The current flowing in the gap region between the electrodes upon the application of a 450 V bias voltage was exploited as the excitation pump for the electroluminescence of different types of color centers localized in the above-mentioned gap. The bright light emission was spatially mapped using a confocal optical microscopy setup. The spectral analysis of electroluminescence revealed the emission from neutrally-charged nitrogen-vacancy centers (NV{sup 0}, λ{sub ZPL} = 575 nm), as well as from cluster crystal dislocations (A-band, λ = 400–500 nm). Moreover, an electroluminescence signal with appealing spectral features (sharp emission at room temperature, low phonon sidebands) from He-related defects was detected (λ{sub ZPL} = 536.3 nm, λ{sub ZPL} = 560.5 nm); a low and broad peak around λ = 740 nm was also observed and tentatively ascribed to Si-V or GR1 centers. These results pose interesting future perspectives for the fabrication of electrically-stimulated single-photon emitters in diamond for applications in quantum optics and quantum cryptography.

  15. Tunable magneto-conductance and magneto-electroluminescence in polymer light-emitting electrochemical planar devices

    Energy Technology Data Exchange (ETDEWEB)

    Geng, R.; Mayhew, N. T.; Nguyen, T. D., E-mail: ngtho@uga.edu [Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602 (United States)

    2013-12-09

    We report studies of magneto-conductance (MC) and magneto-electroluminescence (MEL) in polymer light-emitting electrochemical planar devices using “super-yellow” poly-(phenylene vinylene). We observed consistent negative MC while MEL becomes positive when electroluminescence quantum efficiency (ELQE) increases. At an optimal ELQE, the MC has a much narrower width than the MEL, indicating that the MC and MEL do not share a common origin. However, MC reverses and has the same width as MEL when exposed to a threshold laser power. We show that the e-h pair model can explain the positive MEL and MC while the negative MC can be explained by the bipolaron model.

  16. Tunable magneto-conductance and magneto-electroluminescence in polymer light-emitting electrochemical planar devices

    International Nuclear Information System (INIS)

    Geng, R.; Mayhew, N. T.; Nguyen, T. D.

    2013-01-01

    We report studies of magneto-conductance (MC) and magneto-electroluminescence (MEL) in polymer light-emitting electrochemical planar devices using “super-yellow” poly-(phenylene vinylene). We observed consistent negative MC while MEL becomes positive when electroluminescence quantum efficiency (ELQE) increases. At an optimal ELQE, the MC has a much narrower width than the MEL, indicating that the MC and MEL do not share a common origin. However, MC reverses and has the same width as MEL when exposed to a threshold laser power. We show that the e-h pair model can explain the positive MEL and MC while the negative MC can be explained by the bipolaron model

  17. A novel electroluminescent PPV copolymer and silsesquioxane nanocomposite film for the preparation of efficient PLED devices.

    Science.gov (United States)

    Venegoni, Ivan; Carniato, Fabio; Olivero, Francesco; Bisio, Chiara; Pira, Nello Li; Lambertini, Vito Guido; Marchese, Leonardo

    2012-11-02

    Polymer light-emitting diodes (PLEDs) have attracted growing interest in recent years for their potential use in displays and lighting fields. Nevertheless, PLED devices have some disadvantages in terms of low optoelectronic efficiency, high cost, short lifetimes and low thermal stability, which limit their final applications. Huge efforts have been made recently to improve the performances of these devices. The addition of inorganic or hybrid organic-inorganic nanoparticles to the light-emitting polymers, for example, allows their thermal stability and electroluminescent efficiency to be increased. Following this approach, novel PLED devices based on composite films of PPV-derivative copolymer (commercial name Super Yellow, SY) and octaisobutil POSS, were developed in this study. The device containing Super Yellow loaded with 1 wt% of POSS showed higher efficiency (ca. +30%) and improved lifetime in comparison to PLED prepared with the pure electroluminescent polymer. The PLED devices developed in this study are suitable candidates for automotive dashboards and, in general, for lighting applications.

  18. [Multiple emissions in organic electroluminescent device using a mixed layer as an emitter].

    Science.gov (United States)

    Zhu, Wen-qing; Wu, You-zhi; Zheng, Xin-you; Jiang, Xue-yin; Zhang, Zhi-lin; Sun, Run-guang; Xu, Shao-hong

    2005-04-01

    A organic electroluminescent device has been fabricated by using a mixed layer as an emitter. The configuration of the device is ITO/TPD/TPD: PBD(equimole)/PBD/A1, in which TPD (N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine) and PBD (2-(4'-biphenyl)-5-(4''-tert-butylphenyl)-1,3,4-oxadiazole) are used as hole transport material and electron transport material, respectively. Broad and red-shifted electroluminescent spectra related to the fluorescence of constituent materials were observed. It is suggested that the monomer, exciplex and electroplex emissions are simultaneously involved in EL spectra by comparison of the EL with the PL spectra and decomposition of the EL spectrum. The type of exciplex is the interaction between the excited state TPD (TPD*) and PBD in the ground state, and the type of electroplex is a (D+-A-)* complex by cross-recombination of hole on the charged hole transport molecule (D+) and electron on the charged electron transport molecule (A-). All types of excited states show different formation mechanisms and recombination processes under electric field. The change of emission strengths from monomer and excited complexes lead to a blue-shift of the emissive spectra with an increasing electric field. The maximum luminance and external quantum efficiency of this device are 240 cd x (cm2)(-1) and 0.49%, respectively. The emissions from exciplex or electroplex formation at the organic solid interface generally present a broad and red-shifted emissive band, providing an effective method for tuning of emission color in organic electroluminescent devices.

  19. Piezo Voltage Controlled Planar Hall Effect Devices.

    Science.gov (United States)

    Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

    2016-06-22

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

  20. An electroluminescence device for printable electronics using coprecipitated ZnS:Mn nanocrystal ink

    International Nuclear Information System (INIS)

    Toyama, T; Hama, T; Adachi, D; Nakashizu, Y; Okamoto, H

    2009-01-01

    Electroluminescence (EL) devices for printable electronics using coprecipitated ZnS:Mn nanocrystal (NC) ink are demonstrated. The EL properties of these devices were investigated along with the structural and optical properties of ZnS:Mn NCs with an emphasis on their dependence on crystal size. Transmission electron microscopy and x-ray diffraction studies revealed that the NCs, with a crystal size of 3-4 nm, are nearly monodisperse; the crystal size can be controlled by the Zn 2+ concentration in the starting solution for coprecipitation. The results of optical studies indicate the presence of quantum confinement effects; in addition, the NC surfaces are well passivated, regardless of the crystal size. Finally, an increase in the luminance of EL devices with a decrease in crystal size is observed, which suggests the excitation mechanism of ZnS:Mn NC EL devices.

  1. White-electroluminescent device with horizontally patterned blue/yellow phosphor-layer structure

    International Nuclear Information System (INIS)

    Won Park, Boo; Sik Choi, Nam; Won Park, Kwang; Mo Son, So; Kim, Jong Su; Kyun Shon, Pong

    2007-01-01

    White-electroluminescent (EL) devices with stripe-patterned and square-patterned phosphor-layer structures are fabricated through a screen printing method: electrode/BaTiO 3 insulator layer/patterned blue ZnS:Cu, Cl and yellow ZnS:Cu, Mn phosphor layer/ITO PET substrate. The luminous intensities of EL devices with stripe-patterned and square-patterned phosphor-layer structures are 33% and 23% higher than a conventional device with the phosphor-layer structure without any patterns using the phosphor blend. It can be explained in terms of the absorption of the emitted blue light of blue phosphor layer by the yellow-emitting phosphor layer. The EL device of our patterned phosphor-layer structure gives the possibility to enhance the luminance

  2. Emission characteristics in solution-processed asymmetric white alternating current field-induced polymer electroluminescent devices

    Science.gov (United States)

    Chen, Yonghua; Xia, Yingdong; Smith, Gregory M.; Gu, Yu; Yang, Chuluo; Carroll, David L.

    2013-01-01

    In this work, the emission characteristics of a blue fluorophor poly(9, 9-dioctylfluorene) (PFO) combined with a red emitting dye: Bis(2-methyl-dibenzo[f,h]quinoxaline)(acetylacetonate)iridium (III) [Ir(MDQ)2(acac)], are examined in two different asymmetric white alternating current field-induced polymer electroluminescent (FIPEL) device structures. The first is a top-contact device in which the triplet transfer is observed resulting in the concentration-dependence of the emission similar to the standard organic light-emitting diode (OLED) structure. The second is a bottom-contact device which, however, exhibits concentration-independence of emission. Specifically, both dye emission and polymer emission are found for the concentrations as high as 10% by weight of the dye in the emitter. We attribute this to the significant different carrier injection characteristics of the two FIPEL devices. Our results suggest a simple and easy way to realize high-quality white emission.

  3. High-performance alternating current field-induced chromatic-stable white polymer electroluminescent devices employing a down-conversion layer

    Energy Technology Data Exchange (ETDEWEB)

    Xia, Yingdong; Chen, Yonghua; Smith, Gregory M. [Center for Nanotechnology and Molecular Materials, Department of Physics, Wake Forest University, Winston-Salem, NC 27105 (United States); Sun, Hengda; Yang, Dezhi [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Nie, Wanyi; Li, Yuan; Huang, Wenxiao [Center for Nanotechnology and Molecular Materials, Department of Physics, Wake Forest University, Winston-Salem, NC 27105 (United States); Ma, Dongge [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Carroll, David L., E-mail: carroldl@wfu.edu [Center for Nanotechnology and Molecular Materials, Department of Physics, Wake Forest University, Winston-Salem, NC 27105 (United States)

    2015-05-15

    In this work, a high-performance alternating current (AC) filed-induced chromatic-stable white polymer electroluminescence (WFIPEL) device was fabricated by combining a fluorophor Poly(9,9-dioctylfluorene) (PFO)-based blue device with a yellow down-conversion layer (YAG:Ce). A maximum luminance of this down-conversion FIPEL device achieves 3230 cd m{sup −2}, which is 1.41 times higher than the device without the down-conversion layer. A maximum current efficiency and power efficiency of the down-conversion WFIPEL device reach 19.7 cd A{sup −1} at 3050 cd m{sup −2} and 5.37 lm W{sup −1} at 2310 cd m{sup −2} respectively. To the best of our knowledge, the power efficiency is one of the highest reports for the WFIPEL up to now. Moreover, Commison Internationale de L’Eclairage (CIE) coordinates of (0.28, 0.30) is obtained by adjusting the thickness of the down-conversion layer to 30 μm and it is kept stable over the entire AC-driven voltage range. We believe that this AC-driven, down-conversion, WFIPEL device may offer an easy way towards future flat and flexible lighting sources. - Highlights: • A high-performance AC filed-induced chromatic-stable white polymer electroluminescence (WFIPEL) device was fabricated. • A maximum luminance, current efficiency, and power efficiency achieves 3230 cd m{sup −2}, 19.7 cd A{sup −1}, and 5.37 lm W{sup −1}, respectively. • The power efficiency is one of the highest reports for the WFIPEL up to now. • The EL spectrum kept very stable over the entire AC-driven voltage range.

  4. Electroluminescence Properties of IrQ(ppy)2 Dual-Emitter Organometallic Compound in Organic Light-Emitting Devices

    Science.gov (United States)

    Ciobotaru, Constantin Claudiu; Polosan, Silviu; Ciobotaru, Iulia Corina

    2018-02-01

    This paper reports the influence of the charge carrier mobility on the electroluminescent properties of a dual-emitter organometallic compound dispersed in two conjugated organic small-molecule host materials and embedded in organic light-emitting devices (OLEDs). The electroluminescent processes in OLEDs are strongly influenced by the host-guest interaction. The charge carrier mobility in the host material plays an important role in the electroluminescent processes but also depends on the triplet-triplet interaction with the organometallic compound. The low charge carrier mobility in 4,4'-bis( N-carbazolyl)-1,1'-biphenyl (CBP) host material reduces the electroluminescent processes, but they are slightly enhanced by the triplet-triplet exothermic charge transfer. The higher charge carrier mobility in the case of N, N'-bis(3-methylphenyl)- N, N'-diphenylbenzidine (TPD) host material influences the electroluminescent processes by the endothermic energy transfer at room temperature, which facilitates the triplet-triplet harvesting in the host-guest system. The excitation is transferred to the guest molecules by triplet-triplet interaction as a Dexter transfer, which occurs by endothermic transfer from the triplet exciton in the host to the triplet exciton in the guest.

  5. Efficient blue-green and green electroluminescent devices obtained by doping iridium complexes into hole-block material as supplementary light-emitting layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Liang [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zheng, Youxuan, E-mail: yxzheng@mail.nju.edu.cn [State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China); Deng, Ruiping; Feng, Jing; Song, Mingxing; Hao, Zhaomin [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zhang, Hongjie, E-mail: hongjie@ciac.jl.cn [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Zuo, Jinglin; You, Xiaozeng [State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China)

    2014-04-15

    In this work, organic electroluminescent (EL) devices with dominant and supplementary light-emitting layers (EMLs) were designed to further improve the EL performances of two iridium{sup III}-based phosphorescent complexes, which have been reported to provide EL devices with slow EL efficiency roll-off. The widely used hole-block material 2,2′,2''-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) was selected as host material to construct the supplementary EML. Compared with single-EML devices, double-EMLs devices showed higher EL efficiencies, higher brightness, and lower operation voltage attributed to wider recombination zone and better balance of carriers. In addition, the insertion of supplementary EML is instrumental in facilitating carriers trapping, thus improving the color purity. Finally, high performance blue-green and green EL devices with maximum current efficiencies of 35.22 and 90.68 cd/A, maximum power efficiencies of 26.36 and 98.18 lm/W, and maximum brightness of 56,678 and 112,352 cd/m{sup 2}, respectively, were obtained by optimizing the doping concentrations. Such a device design strategy extends the application of a double EML device structure and provides a chance to simplify device fabrication processes. -- Highlights: • Electroluminescent devices with supplementary light-emitting layer were fabricated. • Doping concentrations and thicknesses were optimized. • Better balance of holes and electrons causes the enhanced efficiency. • Improved carrier trapping suppresses the emission of host material.

  6. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Ana Luz Muñoz-Rosas

    2018-03-01

    Full Text Available Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC-sputtering technique, and an aluminum doped zinc oxide thin film (AZO which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

  7. Homogeneous Synthesis and Electroluminescence Device of Highly Luminescent CsPbBr3 Perovskite Nanocrystals.

    Science.gov (United States)

    Wei, Song; Yang, Yanchun; Kang, Xiaojiao; Wang, Lan; Huang, Lijian; Pan, Daocheng

    2017-03-06

    Highly luminescent CsPbBr 3 perovskite nanocrystals (PNCs) are homogeneously synthesized by mixing toluene solutions of PbBr 2 and cesium oleate at room temperature in open air. We found that PbBr 2 can be easily dissolved in nonpolar toluene in the presence of tetraoctylammonium bromide, which allows us to homogeneously prepare CsPbBr 3 perovskite quantum dots and prevents the use of harmful polar organic solvents, such as N,N-dimethylformamide, dimethyl sulfoxide, and N-methyl-2-pyrrolidone. Additionally, this method can be extended to synthesize highly luminescent CH 3 NH 3 PbBr 3 perovskite quantum dots. An electroluminescence device with a maximal luminance of 110 cd/m 2 has been fabricated by using high-quality CsPbBr 3 PNCs as the emitting layer.

  8. Efficient red organic electroluminescent devices based on trivalent europium complex obtained by designing the device structure with stepwise energy levels

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Liang; Jiang, Yunlong; Cui, Rongzhen; Li, Yanan; Zhao, Xuesen; Deng, Ruiping; Zhang, Hongjie, E-mail: hongjie@ciac.ac.cn

    2016-02-15

    In this study, we aim to further enhance the electroluminescence (EL) performances of trivalent europium complex Eu(TTA){sub 3}phen (TTA=thenoyltrifluoroacetone and phen=1,10-phenanthroline) by designing the device structure with stepwise energy levels. The widely used bipolar material 2,6-bis(3-(9H-carbazol-9-yl)phenyl)pyridine (26DCzPPy) was chosen as host material, while the doping concentration of Eu(TTA){sub 3}phen was optimized to be 4%. To facilitate the injection and transport of holes, MoO{sub 3} anode modification layer and 4,4′,4′′-Tris(carbazole-9-yl)triphenylamine (TcTa) hole transport layer were inserted in sequence. Efficient pure red emission with suppressed efficiency roll-off was obtained attributed to the reduction of accumulation holes, the broadening of recombination zone, and the improved balance of holes and electrons on Eu(TTA){sub 3}phen molecules. Finally, the device with 3 nm MoO{sub 3} and 5 nm TcTa obtained the highest brightness of 3278 cd/m{sup 2}, current efficiency of 12.45 cd/A, power efficiency of 11.50 lm/W, and external quantum efficiency of 6.60%. Such a device design strategy helps to improve the EL performances of emitters with low-lying energy levels and provides a chance to simplify device fabrication processes. - Highlights: • Electroluminescent performances of europium complex were further improved. • Device structure with stepwise energy levels was designed. • Better carriers' balance was realized by improving the injection and transport of holes. • The selection of bipolar host caused the broadening of recombination zone.

  9. Spray deposition of organic electroluminescent coatings for application in flexible light emitting devices

    Directory of Open Access Journals (Sweden)

    Mariya Aleksandrova

    2015-12-01

    Full Text Available Organic electroluminescent (EL films of tris(8-hydroxyquinolinatoaluminum (Alq3 mixed with polystyrene (PS binder were produced by spray deposition. The influence of the substrate temperature on the layer’s morphology and uniformity was investigated. The deposition conditions were optimized and simple flexible light-emitting devices consisting of indium-tin oxide/Alq3:PS/aluminum were fabricated on polyethylene terephthalate (PET foil to demonstrate the advantages of the sprayed organic coatings. Same structure was produced by thermal evaporation of Alq3 film as a reference. The influence of the deposition method on the film roughness and contact resistance at the electrode interfaces for both types of structures was estimated. The results were related to the devices’ efficiency. It was found that the samples with sprayed films turn on at 4 V, which is 2 V lower in comparison to the device with thermal evaporated Alq3. The current through the sprayed device is six times higher as well (17 mA vs. 2.8 mA at 6.5 V, which can be ascribed to the lower contact resistance at the EL film/electrode interfaces. This is due to the lower surface roughness of the pulverized layers.

  10. Electroluminescence from ZnO/Si heterojunctions fabricated by PLD with bias voltage application

    Science.gov (United States)

    Seno, Yuuki; Konno, Daisuke; Komiyama, Takao; Chonan, Yasunori; Yamaguchi, Hiroyuki; Aoyama, Takashi

    2014-02-01

    Electroluminescence (EL) for ZnO films has been investigated by fabricating n-ZnO/p-Si heterojunctions and changing the VI/II (O/Zn) ratio of the films. In the photoluminescence (PL) spectra, both the near band edge (NBE) emission and the defect-related emission were observed, while in the EL spectra only defect-related emission was observed. The EL spectra were divided into three components: green (550 nm), yellow (618 nm) and red (700 nm) bands; and their intensities were compared. As the VI/II (O/Zn) ratio was increased, the red band emission intensity decreased and the green band emission intensity increased. This implies that the oxygen and the zinc vacancies are related to the red and the green band emissions, respectively. Electron transitions from the conduction band minimum (Ec) to the deep energy levels of these vacancies are suggested to cause the red and the green luminescences while the energy levels of the Zn interstitials are close to the Ec in the band gap and no NBE emission is observed.

  11. Electroluminescence from ZnO/Si heterojunctions fabricated by PLD with bias voltage application

    International Nuclear Information System (INIS)

    Seno, Yuuki; Konno, Daisuke; Komiyama, Takao; Chonan, Yasunori; Yamaguchi, Hiroyuki; Aoyama, Takashi

    2014-01-01

    Electroluminescence (EL) for ZnO films has been investigated by fabricating n-ZnO/p-Si heterojunctions and changing the VI/II (O/Zn) ratio of the films. In the photoluminescence (PL) spectra, both the near band edge (NBE) emission and the defect-related emission were observed, while in the EL spectra only defect-related emission was observed. The EL spectra were divided into three components: green (550 nm), yellow (618 nm) and red (700 nm) bands; and their intensities were compared. As the VI/II (O/Zn) ratio was increased, the red band emission intensity decreased and the green band emission intensity increased. This implies that the oxygen and the zinc vacancies are related to the red and the green band emissions, respectively. Electron transitions from the conduction band minimum (Ec) to the deep energy levels of these vacancies are suggested to cause the red and the green luminescences while the energy levels of the Zn interstitials are close to the Ec in the band gap and no NBE emission is observed

  12. Modulation of the electroluminescence emission from ZnO/Si NCs/p-Si light-emitting devices via pulsed excitation

    Science.gov (United States)

    López-Vidrier, J.; Gutsch, S.; Blázquez, O.; Hiller, D.; Laube, J.; Kaur, R.; Hernández, S.; Garrido, B.; Zacharias, M.

    2017-05-01

    In this work, the electroluminescence (EL) emission of zinc oxide (ZnO)/Si nanocrystals (NCs)-based light-emitting devices was studied under pulsed electrical excitation. Both Si NCs and deep-level ZnO defects were found to contribute to the observed EL. Symmetric square voltage pulses (50-μs period) were found to notably enhance EL emission by about one order of magnitude. In addition, the control of the pulse parameters (accumulation and inversion times) was found to modify the emission lineshape, long inversion times (i.e., short accumulation times) suppressing ZnO defects contribution. The EL results were discussed in terms of the recombination dynamics taking place within the ZnO/Si NCs heterostructure, suggesting the excitation mechanism of the luminescent centers via a combination of electron impact, bipolar injection, and sequential carrier injection within their respective conduction regimes.

  13. Low driving voltage simplified tandem organic light-emitting devices by using exciplex-forming hosts

    Science.gov (United States)

    Zhou, Dong-Ying; Cui, Lin-Song; Zhang, Ying-Jie; Liao, Liang-Sheng; Aziz, Hany

    2014-10-01

    Tandem organic light-emitting devices (OLEDs), i.e., OLEDs containing multiple electroluminescence (EL) units that are vertically stacked, are attracting significant interest because of their ability to realize high current efficiency and long operational lifetime. However, stacking multiple EL units in tandem OLEDs increases driving voltage and complicates fabrication process relative to their standard single unit counterparts. In this paper, we demonstrate low driving voltage tandem OLEDs via utilizing exciplex-forming hosts in the EL units instead of conventional host materials. The use of exciplex-forming hosts reduces the charge injection barriers and the trapping of charges on guest molecules, resulting in the lower driving voltage. The use of exciplex-forming hosts also allows using fewer layers, hence simpler EL configuration which is beneficial for reducing the fabrication complexity of tandem OLEDs.

  14. Zinc Cadmium Selenide Cladded Quantum Dot Based Electroluminescent and Nonvolatile Memory Devices

    Science.gov (United States)

    Al-Amody, Fuad H.

    This dissertation presents electroluminescent (EL) and nonvolatile memory devices fabricated using pseudomorphic ZnCdSe-based cladded quantum dots (QDs). These dots were grown using our own in-school built novel reactor. The EL device was fabricated on a substrate of ITO (indium tin oxide) coated glass with the quantum dots sandwiched between anode and cathode contacts with a small barrier layer on top of the QDs. The importance of these cladded dots is to increase the quantum yield of device. This device is unique as they utilize quantum dots that are pseudomorphic (nearly lattice-matched core and the shell of the dot). In the case of floating quantum dot gate nonvolatile memory, cladded ZnCdSe quantum dots are deposited on single crystalline gate insulator (ZnMgS/ZnMgSe), which is grown using metal-organic chemical vapor deposition (MOCVD). The control gate dielectric layer of the nonvolatile memory is Si3N4 or SiO2 and is grown using plasma enhanced chemical vapor deposition (PECVD). The cladded dots are grown using an improved methodology of photo-assisted microwave plasma metal-organic chemical vapor deposition (PMP-MOCVD) enhanced reactor. The cladding composition of the core and shell of the dots was engineered by the help of ultraviolet light which changed the incorporation of zinc (and hence composition of ZnCdSe). This makes ZnxCd1--xSe-ZnyCd1--y Se QDs to have a low composition of zinc in the core than the cladding (x

  15. Advanced High Voltage Power Device Concepts

    CERN Document Server

    Baliga, B Jayant

    2012-01-01

    Advanced High Voltage Power Device Concepts describes devices utilized in power transmission and distribution equipment, and for very high power motor control in electric trains and steel-mills. Since these devices must be capable of supporting more than 5000-volts in the blocking mode, this books covers operation of devices rated at 5,000-V, 10,000-V and 20,000-V. Advanced concepts (the MCT, the BRT, and the EST) that enable MOS-gated control of power thyristor structures are described and analyzed in detail. In addition, detailed analyses of the silicon IGBT, as well as the silicon carbide MOSFET and IGBT, are provided for comparison purposes. Throughout the book, analytical models are generated to give a better understanding of the physics of operation for all the structures. This book provides readers with: The first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets;  Analytical formulations for all the device ...

  16. Electroluminescent Characteristics of DBPPV–ZnO Nanocomposite Polymer Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Madhava Rao MV

    2009-01-01

    Full Text Available Abstract We have demonstrated that fabrication and characterization of nanocomposite polymer light emitting devices with metal Zinc Oxide (ZnO nanoparticles and 2,3-dibutoxy-1,4-poly(phenylenevinylene (DBPPV. The current and luminance characteristics of devices with ZnO nanoparticles are much better than those of device with pure DBPPV. Optimized maximum luminance efficiencies of DBPPV–ZnO (3:1 wt% before annealing (1.78 cd/A and after annealing (2.45 cd/A having a brightness 643 and 776 cd/m2at a current density of 36.16 and 31.67 mA/cm2are observed, respectively. Current density–voltage and brightness–voltage characteristics indicate that addition of ZnO nanoparticles can facilitate electrical injection and charge transport. The thermal annealing is thought to result in the formation of an interfacial layer between emissive polymer film and cathode.

  17. Electronic voltage and current transformers testing device.

    Science.gov (United States)

    Pan, Feng; Chen, Ruimin; Xiao, Yong; Sun, Weiming

    2012-01-01

    A method for testing electronic instrument transformers is described, including electronic voltage and current transformers (EVTs, ECTs) with both analog and digital outputs. A testing device prototype is developed. It is based on digital signal processing of the signals that are measured at the secondary outputs of the tested transformer and the reference transformer when the same excitation signal is fed to their primaries. The test that estimates the performance of the prototype has been carried out at the National Centre for High Voltage Measurement and the prototype is approved for testing transformers with precision class up to 0.2 at the industrial frequency (50 Hz or 60 Hz). The device is suitable for on-site testing due to its high accuracy, simple structure and low-cost hardware.

  18. High performance yellow organic electroluminescent devices by doping iridium(III) complex into host materials with stepwise energy levels

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Rongzhen; Zhou, Liang, E-mail: zhoul@ciac.ac.cn; Jiang, Yunlong; Li, Yanan; Zhao, Xuesen; Zhang, Hongjie, E-mail: hongjie@ciac.ac.cn

    2015-10-15

    In this work, we aim to further improve the electroluminescent (EL) performances of a yellow light-emitting iridium(III) complex by designing double light-emitting layers (EMLs) devices having stepwise energy levels. Compared with single-EML devices, these designed double-EML devices showed improved EL efficiency and brightness attributed to better balance in carriers. In addition, the stepwise distribution in energy levels of host materials is instrumental in broadening the recombination zone, thus delaying the roll-off of EL efficiency. Based on the investigation of carriers' distribution, device structure was further optimized by adjusting the thickness of deposited layers. Finally, yellow EL device (Commission Internationale de l'Eclairage (CIE) coordinates of (0.446, 0.542)) with maximum current efficiency, power efficiency and brightness up to 78.62 cd/A (external quantum efficiency (EQE) of 21.1%), 82.28 lm/W and 72,713 cd/m{sup 2}, respectively, was obtained. Even at the high brightness of 1000 cd/m{sup 2}, EL efficiency as high as 65.54 cd/A (EQE=17.6%) can be retained. - Highlights: • Yellow electroluminescent devices were designed and fabricated. • P-type and n-type materials having stepwise energy levels were chosen as host materials. • Better balance of holes and electrons causes the enhanced efficiencies. • Improved carriers' trapping suppresses the emission of host material.

  19. Large-area and bright pulsed electroluminescence in monolayer semiconductors

    KAUST Repository

    Lien, Der-Hsien; Amani, Matin; Desai, Sujay B.; Ahn, Geun Ho; Han, Kevin; He, Jr-Hau; Ager, Joel W.; Wu, Ming C.; Javey, Ali

    2018-01-01

    Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

  20. Large-area and bright pulsed electroluminescence in monolayer semiconductors

    KAUST Repository

    Lien, Der-Hsien

    2018-04-04

    Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

  1. Thermo-optical properties of 1H[3,4-b] quinoline films used in electroluminescent devices

    Science.gov (United States)

    Jaglarz, Janusz; Kępińska, Mirosława; Sanetra, Jerzy

    2014-06-01

    Electroluminescence cells with H[3,4-b] quinoline layers are promising devices for a blue light emitting EL diode. This work measured the optical reflectance as a function of temperature in copolymers PAQ layers deposited on Si crystalline substrate. Using the extended Cauchy dispersion model of the film refractive index we determined the thermo-optical coefficients for quinoline layers in the temperature range of 76-333 K from combined ellipsometric and spectrofotometric studies. The obtained values of thermo-optical coefficients of thin PAQ film, were negative and ranged in 5-10 × 10-4 [1/K].

  2. Observation of red electroluminescence from an Eu2O3/ p +-Si device and improved performance by introducing a Tb2O3 layer

    International Nuclear Information System (INIS)

    Yin, Xue; Wang, Shenwei; Mu, Guangyao; Wan, Guangmiao; Huang, Miaoling; Yi, Lixin

    2017-01-01

    We report red electroluminescence (EL) from an Eu 2 O 3 / p + -Si device with Eu 2 O 3 film annealed in oxygen ambient at 700 °C. The red EL is ascribed to the characteristic emissions of Eu 3+ ions in Eu 2 O 3 film and the luminescence mechanism is discussed in detail. In order to optimize the device performance, Eu 2 O 3 /Tb 2 O 3 multiple films were deposited on Si wafer, and the result showed EL intensity of the device was obviously enhanced and the turn-on voltage was reduced to about 10 V. Moreover, intensity ratio I ( 5 D 0 – 7 F 2 )/ I ( 5 D 0 – 7 F 1 ) was also significantly increased with the hypersensitive transition 5 D 0 – 7 F 2 as the most prominent group at about 611 nm. The improved performance was attributed to the added Tb 2 O 3 film that it can be served as the hole-injection layer to afford extra holes injected into the Eu 2 O 3 layer. (paper)

  3. Ultraviolet-visible electroluminescence from metal-oxide-semiconductor devices with CeO2 films on silicon

    International Nuclear Information System (INIS)

    Lv, Chunyan; Zhu, Chen; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

    2015-01-01

    We report on ultraviolet-visible (UV-Vis) electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with the CeO 2 films annealed at low temperatures. At the same injection current, the UV-Vis EL from the MOS device with the 550 °C-annealed CeO 2 film is much stronger than that from the counterpart with the 450 °C-annealed CeO 2 film. This is due to that the 550 °C-annealed CeO 2 film contains more Ce 3+ ions and oxygen vacancies. It is tentatively proposed that the recombination of the electrons in multiple oxygen-vacancy–related energy levels with the holes in Ce 4f 1 energy band pertaining to Ce 3+ ions leads to the UV-Vis EL

  4. Magneto-electroluminescence effects in the single-layer organic light-emitting devices with macrocyclic aromatic hydrocarbons

    Directory of Open Access Journals (Sweden)

    S.-T. Pham

    2018-02-01

    Full Text Available Magneto-electroluminescence (MEL effects are observed in single-layer organic light-emitting devices (OLEDs comprising only macrocyclic aromatic hydrocarbons (MAHs. The fluorescence devices were prepared using synthesized MAHs, namely, [n]cyclo-meta-phenylene ([n]CMP, n = 5, 6. The MEL ratio of the resulting OLED is 1%–2% in the spectral wavelength range of 400-500 nm, whereas it becomes negative (−1.5% to −2% in the range from 650 to 700 nm. The possible physical origins of the sign change in the MEL are discussed. This wavelength-dependent sign change in the MEL ratio could be a unique function for future single-layer OLEDs capable of magnetic-field-induced color changes.

  5. Magneto-electroluminescence effects in the single-layer organic light-emitting devices with macrocyclic aromatic hydrocarbons

    Science.gov (United States)

    Pham, S.-T.; Ikemoto, K.; Suzuki, K. Z.; Izumi, T.; Taka, H.; Kita, H.; Sato, S.; Isobe, H.; Mizukami, S.

    2018-02-01

    Magneto-electroluminescence (MEL) effects are observed in single-layer organic light-emitting devices (OLEDs) comprising only macrocyclic aromatic hydrocarbons (MAHs). The fluorescence devices were prepared using synthesized MAHs, namely, [n]cyclo-meta-phenylene ([n]CMP, n = 5, 6). The MEL ratio of the resulting OLED is 1%-2% in the spectral wavelength range of 400-500 nm, whereas it becomes negative (-1.5% to -2%) in the range from 650 to 700 nm. The possible physical origins of the sign change in the MEL are discussed. This wavelength-dependent sign change in the MEL ratio could be a unique function for future single-layer OLEDs capable of magnetic-field-induced color changes.

  6. Thermally and electrochemically stable amorphous hole-transporting materials based on carbazole dendrimers for electroluminescent devices

    International Nuclear Information System (INIS)

    Promarak, Vinich; Ichikawa, Musubu; Sudyoadsuk, Taweesak; Saengsuwan, Sayant; Jungsuttiwong, Siriporn; Keawin, Tinnagon

    2008-01-01

    Amorphous hole-transporting carbazole dendrimers, 1,4-bis[3,6-di(carbazol-9-yl)carbazol-9-yl]-2,6-di(2-ethylhexyloxy)benzene (G2CB) and 1,4-bis[3,6-di(carbazol-9-yl)carbazol-9-yl]-9-(2-ethylhexyl)carbazole (G2CC), were synthesized by a divergent approach involving bromination and Ullmann coupling reactions. Compounds G2CB and G2CC showed high thermal stability (T g = 206 to 245 deg. C) and excellent electrochemical reversibility. Double-layer organic light-emitting diodes were fabricated by using G2CB and G2CC as hole-transporting layers (HTLs) and tris(8-quinolinato)aluminum (Alq 3 ) as light-emissive layer with the device configuration of indium tin oxide/HTL/Alq 3 /LiF:Al. Both devices exhibited bright green emission from Alq 3 . The device using G2CC as HTL has the best performance with a maximum brightness of 8900 cd/m 2 at 14 V and a low turn-on voltage of 3.5 V

  7. [Effects of white organic light-emitting devices using color conversion films on electroluminescence spectra].

    Science.gov (United States)

    Hou, Qing-Chuan; Wu, Xiao-Ming; Hua, Yu-Lin; Qi, Qing-Jin; Li, Lan; Yin, Shou-Gen

    2010-06-01

    The authors report a novel white organic light-emitting device (WOLED), which uses a strategy of exciting organic/ inorganic color conversion film with a blue organic light-emitting diode (OLED). The luminescent layer of the blue OLED was prepared by use of CBP host blended with a blue highly fluorescent dye N-BDAVBi. The organic/inorganic color conversion film was prepared by dispersing a mixture of red pigment VQ-D25 and YAG : Ce3+ phosphor in PMMA. The authors have achieved a novel WOLED with the high color stability by optimizing the thickness and fluorescent pigment concentration of the color conversion film. When the driving voltage varied between 6 and 14 V, the color coordinates (CIE) varied slightly from (0.354, 0.304) to (0.357, 0.312) and the maximum current efficiency is about 5.8 cd x A(-1) (4.35 mA x cm(-2)), the maximum brightness is 16 800 cd x m(-2) at the operating voltage of 14 V.

  8. The effect of C60 doping on the electroluminescent performance of organic light-emitting devices

    International Nuclear Information System (INIS)

    Xu Denghui; Deng Zhenbo; Xiao Jing; Guo Dong; Hao Jingang; Zhang Yuanyuan; Gao Yinhao; Liang Chunjun

    2007-01-01

    Organic light-emitting devices (OLEDs) with the PVK hole transport layer were fabricated. The effect of C 60 doping in the hole transport PVK layer on the performance of the devices was investigated by changing the C 60 content from 0 to 3.0 wt%. The OLEDs had a structure of ITO/PEDOT:PSS/PVK:C 60 (0, 0.5, 1.0, 2.0, 3.0 wt%)/AlQ/LiF/Al. The doping led to a higher conductivity in C 60 -doped PVK layer and the hole mobility of PVK was improved from 4.5x10 -7 to 2.6x10 -6 cm 2 /Vs with the doping concentration of C 60 changing from 0 to 3.0 wt%. Moreover, the doping led to a high density of equilibrium charges carriers, which facilitated hole injection and transport. Doping of C 60 in PVK resulted in efficient hole injection and low drive voltage at high luminance

  9. Observation of near infrared and enhanced visible emissions from electroluminescent devices with organo samarium(III) complex

    Energy Technology Data Exchange (ETDEWEB)

    Chu, B [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dong NanHu Road, Economic Development Area, Changchun, 130033 (China); Li, W L [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dong NanHu Road, Economic Development Area, Changchun, 130033 (China); Hong, Z R [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dong NanHu Road, Economic Development Area, Changchun, 130033 (China); Zang, F X [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dong NanHu Road, Economic Development Area, Changchun, 130033 (China); Wei, H Z [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dong NanHu Road, Economic Development Area, Changchun, 130033 (China); Wang, D Y [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dong NanHu Road, Economic Development Area, Changchun, 130033 (China); Li, M T [Key Laboratory of the Excited States Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dong NanHu Road, Economic Development Area, Changchun, 130033 (China); Lee, C S [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Lee, S T [Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China)

    2006-11-07

    Samarium (dibenzoylmethanato){sub 3} bathophenanthroline (Sm(DBM){sub 3} bath) was employed as an emitting and electron transport layer in organic light emitting diodes (OLEDs), and narrow electroluminescent (EL) emissions of a Sm{sup 3+} ion were observed in the visible and near infrared (NIR) region, differing from those of the same devices with Eu{sup 3+}- or Tb{sup 3+}-complex EL devices with the same structure. The EL emissions of the Sm{sup 3+}-devices originate from transitions from {sup 4}G{sub 5/2} to the lower respective levels of Sm{sup 3+} ions. A maximum luminance of 490 cd m{sup -2} at 15 V and an EL efficiency of 0.6% at 0.17 mA cm{sup -2} were obtained in the visible region, and the improved efficiency should be attributed to introducing a transitional layer between the N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) film and the Sm(DBM){sub 3} bath film and the avoidance of interfacial exciplex emission in devices. Sharp emissions of Sm{sup 3+} ions in the NIR region were also observed under a lower threshold value less than 4.5 V.

  10. Study of various n-type organic semiconductors on ultraviolet detective and electroluminescent properties of optoelectronic integrated device

    Science.gov (United States)

    Deng, Chaoxu; Shao, Bingyao; Zhao, Dan; Zhou, Dianli; Yu, Junsheng

    2017-11-01

    Organic optoelectronic integrated device (OID) with both ultraviolet (UV) detective and electroluminescent (EL) properties was fabricated by using a thermally activated delayed fluorescence (TADF) semiconductor of (4s, 6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) as an emitter. The effect of five kinds of n-type organic semiconductors (OSCs) on the enhancement of UV detective and EL properties of OID was systematically studied. The result shows that two orders of magnitude in UV detectivity from 109 to 1011 Jones and 3.3 folds of luminance from 2499 to 8233 cd m-2 could be achieved. The result shows that not only the difference of lowest unoccupied molecular orbital (LUMO) between active layer and OSC but also the variety of electron mobility have a significant effect on the UV detective and EL performance through adjusting electron injection/transport. Additionally, the optimized OSC thickness is beneficial to confine the leaking of holes from the active layer to cathode, leading to the decrease of dark current for high detective performance. This work provides a useful method on broadening OSC material selection and device architecture construction for the realization of high performance OID.

  11. The effect of the thicknesses of the various layers on the colour emitted by an organic electroluminescent device

    Science.gov (United States)

    Jolinat, P.; Clergereaux, R.; Farenc, J.; Destruel, P.

    1998-05-01

    Organic electroluminescent diodes based on thin organic layers are one of the most promising next-generation systems for the backlighting of the liquid crystal screens. Among other methods to obtain white light, three-layer luminescent devices with each layer emitting one of the three fundamental colours have been studied here. Red, green and blue light were produced by 0022-3727/31/10/018/img1 doped with Nile red, 0022-3727/31/10/018/img1 and TPD layers respectively. A fourth thin film of TAZ has been inserted between TPD and 0022-3727/31/10/018/img1 to control injection of electrons into the TPD. The effect of the layers' thicknesses on the spectral emission of the device has been examined. Results show that the thicknesses of TAZ and doped 0022-3727/31/10/018/img1 layers have to be controlled to within a precision of better than 5 Å. The discussion turns on the possibility of applying this technology to screen backlighting.

  12. Electroluminescence of Multicomponent Conjugated Polymers. 1. Roles of Polymer/Polymer Interfaces in Emission Enhancement and Voltage-Tunable Multicolor Emission in Semiconducting Polymer/Polymer Heterojunctions

    National Research Council Canada - National Science Library

    Zhang, Xuejun, Ph.D

    1999-01-01

    Effects of the electronic structure of polymer/polymer interfaces on the electroluminescence efficiency and tunable multicolor emission of polymer heterojunction light-emitting diodes were explored...

  13. Determining the mode of high voltage breakdowns in vacuum devices

    International Nuclear Information System (INIS)

    Miller, H.C.; Furno, E.J.; Sturtz, J.P.

    1980-01-01

    High voltage breakdowns (HVBs) occur in many vacuum devices. It frequently is of great practical interest to know the type (or mode) of such HVB's, since this can indicate weak points in the device. Post-mortems can sometimes be helpful, but it would be quite desirable to have a technique which would allow the HVB mode to be determined in an operating device. Photography can be quite helpful, but unfortunately many devices do not permit optical access to the region of interest. However, the idea of using photography in conjunction with other diagnostic techniques to establish the validity of these techniques seemed promising, since these techniques could then be used to determine the mode of HVBs in opaque devices. A literature search indicates that promising techniques are to measure the voltage applied to the device (or the current through the device) and also to look for x-rays generated by the device during an HVB

  14. Determining the mode of high voltage breakdowns in vacuum devices

    International Nuclear Information System (INIS)

    Miller, H.C.; Furno, E.J.; Sturtz, J.P.

    1980-01-01

    Devices were constructed which were essentially vacuum diodes equipped with windows allowing observation of high voltage breakdowns. The waveform of the applied voltage was photographed, and the x-ray output was monitored to investigate electrical breakdown in these vacuum diodes. Results indicate that breakdowns may be divided into two types: (1) vacuum (interelectrode) breakdown - characterized by a diffuse moderately bright discharge, a relative slow and smooth voltage collapse, and a large burst of x-rays, and (2) surface (insulator) flashover - characterized by a bright discharge with a very bright filamentary core, a relatively fast and noisy voltage collapse and no x-ray burst. Useful information concerning the type of breakdown in a vacuum device can be obtained by monitoring the voltage (current) waveform and the x-ray output

  15. High performance organic integrated device with ultraviolet photodetective and electroluminescent properties consisting of a charge-transfer-featured naphthalimide derivative

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hanyu; Wang, Xu; Yu, Junsheng, E-mail: luzhiyun@scu.edu.cn, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zhou, Jie; Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn, E-mail: jsyu@uestc.edu.cn [College of Chemistry, Sichuan University, Chengdu 610064 (China)

    2014-08-11

    A high performance organic integrated device (OID) with ultraviolet photodetective and electroluminescent (EL) properties was fabricated by using a charge-transfer-featured naphthalimide derivative of 6-(3,5-bis-[9-(4-t-butylphenyl)-9H-carbazol-3-yl]-phenoxy)-2- (4-t-butylphenyl)-benzo[de]isoquinoline-1,3-dione (CzPhONI) as the active layer. The results showed that the OID had a high detectivity of 1.5 × 10{sup 11} Jones at −3 V under the UV-350 nm illumination with an intensity of 0.6 mW/cm{sup 2}, and yielded an exciplex EL light emission with a maximum brightness of 1437 cd/m{sup 2}. Based on the energy band diagram, both the charge transfer feature of CzPhONI and matched energy level alignment were responsible for the dual ultraviolet photodetective and EL functions of OID.

  16. High-efficiency red electroluminescent device based on multishelled InP quantum dots.

    Science.gov (United States)

    Jo, Jung-Ho; Kim, Jong-Hoon; Lee, Ki-Heon; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

    2016-09-01

    We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849  cd/m2, a current efficiency of 4.2  cd/A, and an external quantum efficiency of 2.5%.

  17. High voltage semiconductor devices and methods of making the devices

    Energy Technology Data Exchange (ETDEWEB)

    Matocha, Kevin; Chatty, Kiran; Banerjee, Sujit

    2018-01-23

    A multi-cell MOSFET device including a MOSFET cell with an integrated Schottky diode is provided. The MOSFET includes n-type source regions formed in p-type well regions which are formed in an n-type drift layer. A p-type body contact region is formed on the periphery of the MOSFET. The source metallization of the device forms a Schottky contact with an n-type semiconductor region adjacent the p-type body contact region of the device. Vias can be formed through a dielectric material covering the source ohmic contacts and/or Schottky region of the device and the source metallization can be formed in the vias. The n-type semiconductor region forming the Schottky contact and/or the n-type source regions can be a single continuous region or a plurality of discontinuous regions alternating with discontinuous p-type body contact regions. The device can be a SiC device. Methods of making the device are also provided.

  18. High voltage MOSFET devices and methods of making the devices

    Science.gov (United States)

    Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

    2018-06-05

    A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.

  19. High voltage MOSFET devices and methods of making the devices

    Science.gov (United States)

    Banerjee, Sujit; Matocha, Kevin; Chatty, Kiran

    2015-12-15

    A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.

  20. A discotic triphenylene dimer as organic hole transporting material for electroluminescence devices

    International Nuclear Information System (INIS)

    Mao Huaxiang; He Zhiqun; Wang Junling; Zhang Chunxiu; Xie, Ping; Zhang Rongben

    2007-01-01

    A triphenylene dimer, an intermediate between a discotic triphenylene molecule and the macromolecule, had been prepared by linking together two triphenylene units via phenylene carbamate linkages, which was formed through a reaction between one 1,4-phenylene diisocyanate and two hydroxyl end groups on flexible substituents of triphenylenes. The dimer exhibited good film-forming property. Its temperature-dependent phase transitions were investigated using differential scanning calorimetry and polarized optical microscopy. Room temperature microstructure of the dimer was analyzed by X-ray diffraction. Charge mobility of the triphenylene dimer was also measured. Our preliminary result using the materials in a sandwich light-emitting device is reported here. It demonstrates that the triphenylene dimer is a promising candidate as a hole transporting material

  1. Mixing of phosphorescent and exciplex emission in efficient organic electroluminescent devices.

    Science.gov (United States)

    Cherpak, Vladyslav; Stakhira, Pavlo; Minaev, Boris; Baryshnikov, Gleb; Stromylo, Evgeniy; Helzhynskyy, Igor; Chapran, Marian; Volyniuk, Dmytro; Hotra, Zenon; Dabuliene, Asta; Tomkeviciene, Ausra; Voznyak, Lesya; Grazulevicius, Juozas Vidas

    2015-01-21

    We fabricated a yellow organic light-emitting diode (OLED) based on the star-shaped donor compound tri(9-hexylcarbazol-3-yl)amine, which provides formation of the interface exciplexes with the iridium(III) bis[4,6-difluorophenyl]-pyridinato-N,C2']picolinate (FIrpic). The exciplex emission is characterized by a broad band and provides a condition to realize the highly effective white OLED. It consists of a combination of the blue phosphorescent emission from the FIrpic complex and a broad efficient delayed fluorescence induced by thermal activation with additional direct phosphorescence from the triplet exciplex formed at the interface. The fabricated exciplex-type device exhibits a high brightness of 38 000 cd/m(2) and a high external quantum efficiency.

  2. Current voltage perspective of an organic electronic device

    Science.gov (United States)

    Mukherjee, Ayash K.; Kumari, Nikita

    2018-05-01

    Nonlinearity in current (I) - voltage (V) measurement is a well-known attribute of two-terminal organic device, irrespective of the geometrical or structural arrangement of the device. Most of the existing theories that are developed for interpretation of I-V data, either focus current-voltage relationship of charge injection mechanism across the electrode-organic material interface or charge transport mechanism through the organic active material. On the contrary, both the mechanisms work in tandem charge conduction through the device. The transport mechanism is further complicated by incoherent scattering from scattering centres/charge traps that are located at the electrode-organic material interface and in the bulk of organic material. In the present communication, a collective expression has been formulated that comprises of all the transport mechanisms that are occurring at various locations of a planar organic device. The model has been fitted to experimental I-V data of Au/P3HT/Au device with excellent degree of agreement. Certain physical parameters such as the effective area of cross-section and resistance due to charge traps have been extracted from the fit.

  3. Extremely flexible, transparent, and strain-sensitive electroluminescent device based on ZnS:Cu-polyvinyl butyral composite and silver nanowires

    Science.gov (United States)

    Jun, Sungwoo; Kim, Youngmin; Ju, Byeong-Kwon; Kim, Jong-Woong

    2018-01-01

    A multifunctional alternate current electroluminescent device (ACEL) was achieved by compositing ZnS:Cu particles in polyvinyl butyral (PVB) with two layers of percolated silver nanowire (AgNW) electrodes. The strong hydrogen bonding interactions and entanglement of PVB chains considerably strengthened the PVB, and thus, the cured mixture of ZnS:Cu particles and freestanding PVB required no additional support. The device was fabricated by embedding AgNWs on both sides of the ZnS:Cu-PVB composite film using an inverted layer process and intense-pulsed-light treatment. The strong affinity of PVB to the polyvinyl pyrrolidone (PVP) layer, which capped the AgNWs, mechanically stabilized the device to such an extent that it could resist 10,000 bending cycles under a curvature radius of 500 μm. Using AgNW networks in both the top and bottom electrodes made a double-sided light-emitting device that could be applied to wearable lightings or flexible digital signage. The capacitance formed in the device sensitively varied with the applied bending and unfolding, thus demonstrating that the device can also be used as a deformation sensor.

  4. Red electroluminescent process excited by hot holes in SrGa2S4:Ce, Mn thin film

    International Nuclear Information System (INIS)

    Tanaka, Katsu; Okamoto, Shinji

    2009-01-01

    This paper reports the first observation of red electroluminescence (EL) in SrGa 2 S 4 :Ce, Mn thin film. The EL spectrum consists of single broad emission band having a peak wavelength of 665 nm. The dominant EL decay time was 31 μs. The relationship between the applied voltage and the EL waveform was measured in single insulating thin film electroluminescent (TFEL) devices. An asymmetric EL waveform was observed in SrGa 2 S 4 :Ce, Mn TFEL devices under a rectangular applied voltage. The polarity of the EL waveform in these devices was different from the waveform in manganese-activated zinc sulfide ZnS:Mn devices. This indicates that hot holes excite the Mn 2+ ions to cause the red EL.

  5. Electroluminescence light emitting diodes - an environmental friendly approach

    International Nuclear Information System (INIS)

    Shaukat, S.F.; Farooq, R.

    2005-01-01

    The simple porous silicon-based devices producing stable electroluminescence (EL) by the deposition of a poly-4-dicyanomethylene-4H-cyclopenta dithiophene monolayer (PCDM) into the nanostructure was reported. The structure of these devices is Au/PCDM/porous silicon/Si/Al. The EL emission is bright, visible by the naked eye under normal daylight and broad in wavelength covering the whole visible range with a peak at 60 nm. The emission area of the devices is 1 cm/sup 2/. The El starting voltage is in the range of 14-30 V and the current is around 300 mA. The time stability was good for all the devices tested. After exposure to the air for more than three months, the devices show nearly the same emission intensity without increase of external power supplied. (author)

  6. Electroluminescence from GaN-polymer heterojunction

    International Nuclear Information System (INIS)

    Chitara, Basant; Lal, Nidhi; Krupanidhi, S.B.; Rao, C.N.R.

    2011-01-01

    Inorganic and organic semiconductor devices are generally viewed as distinct and separate technologies. Herein we report a hybrid inorganic-organic light-emitting device employing the use of an air stable polymer, Poly (9,9-dioctylfluorene-alt-benzothiadiazole) as a p-type layer to create a heterojunction, avoiding the use of p-type GaN, which is difficult to grow, being prone to the complex and expensive fabrication techniques that characterises it. I-V characteristics of the GaN-polymer heterojunction fabricated by us exhibits excellent rectification. The luminescence onset voltage is typically about 8-10 V. The device emits yellowish white electroluminescence with CIE coordinates (0.42, 0.44). - Highlights: → We use a polymer Poly (9,9-dioctylfluorene-alt-benzothiadiazole) as a p-type layer to create a heterojunction. → I-V characteristics of the device fabricated by us exhibits excellent rectification. → The p-type polymer also emits yellow light, which when combined in proper composition with GaN, give rise to white light. → Device can be readily fabricated by just spin coating the polymer over GaN reducing the cost of the device.

  7. A voltage biased superconducting quantum interference device bootstrap circuit

    International Nuclear Information System (INIS)

    Xie Xiaoming; Wang Huiwu; Wang Yongliang; Dong Hui; Jiang Mianheng; Zhang Yi; Krause, Hans-Joachim; Braginski, Alex I; Offenhaeusser, Andreas; Mueck, Michael

    2010-01-01

    We present a dc superconducting quantum interference device (SQUID) readout circuit operating in the voltage bias mode and called a SQUID bootstrap circuit (SBC). The SBC is an alternative implementation of two existing methods for suppression of room-temperature amplifier noise: additional voltage feedback and current feedback. Two circuit branches are connected in parallel. In the dc SQUID branch, an inductively coupled coil connected in series provides the bias current feedback for enhancing the flux-to-current coefficient. The circuit branch parallel to the dc SQUID branch contains an inductively coupled voltage feedback coil with a shunt resistor in series for suppressing the preamplifier noise current by increasing the dynamic resistance. We show that the SBC effectively reduces the preamplifier noise to below the SQUID intrinsic noise. For a helium-cooled planar SQUID magnetometer with a SQUID inductance of 350 pH, a flux noise of about 3 μΦ 0 Hz -1/2 and a magnetic field resolution of less than 3 fT Hz -1/2 were obtained. The SBC leads to a convenient direct readout electronics for a dc SQUID with a wider adjustment tolerance than other feedback schemes.

  8. Plasmonic enhancement of electroluminescence

    Science.gov (United States)

    Guzatov, D. V.; Gaponenko, S. V.; Demir, H. V.

    2018-01-01

    Here plasmonic effect specifically on electroluminescence (EL) is studied in terms of radiative and nonradiative decay rates for a dipole near a metal spherical nanoparticle (NP). Contribution from scattering is taken into account and is shown to play a decisive role in EL enhancement owing to pronounced size-dependent radiative decay enhancement and weak size effect on non-radiative counterpart. Unlike photoluminescence where local incident field factor mainly determines the enhancement possibility and level, EL enhancement is only possible by means of quantum yield rise, EL enhancement being feasible only for an intrinsic quantum yield Q0 red-orange range only. Independently of positive effect on quantum yield, metal nanoparticles embedded in an electroluminescent device will improve its efficiency at high currents owing to enhanced overall recombination rate which will diminish manifestation of Auger processes. The latter are believed to be responsible for the known undesirable efficiency droop in semiconductor commercial quantum well based LEDs at higher current. For the same reason plasmonics can diminish quantum dot photodegradation from Auger process induced non-radiative recombination and photoionization thus opening a way to avoid negative Auger effects in emerging colloidal semiconductor LEDs.

  9. Core-Shell Zn x Cd1- x Se/Zn y Cd1- y Se Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications

    Science.gov (United States)

    Al-Amoody, Fuad; Suarez, Ernesto; Rodriguez, Angel; Heller, E.; Huang, Wenli; Jain, F.

    2011-08-01

    This paper presents a floating quantum dot (QD) gate nonvolatile memory device using high-energy-gap Zn y Cd1- y Se-cladded Zn x Cd1- x Se quantum dots ( y > x) with tunneling layers comprising nearly lattice-matched semiconductors (e.g., ZnS/ZnMgS) on Si channels. Also presented is the fabrication of an electroluminescent (EL) device with embedded cladded ZnCdSe quantum dots. These ZnCdSe quantum dots were embedded between indium tin oxide (ITO) on glass and a top Schottky metal electrode deposited on a thin CsF barrier. These QDs, which were nucleated in a photo-assisted microwave plasma (PMP) metalorganic chemical vapor deposition (MOCVD) reactor, were grown between the source and drain regions on a p-type silicon substrate of the nonvolatile memory device. The composition of QD cladding, which relates to the value of y in Zn y Cd1- y Se, was engineered by the intensity of ultraviolet light, which controlled the incorporation of zinc in ZnCdSe. The QD quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots as well as two diverse types of devices are presented in this paper.

  10. Artifical Excitation of Ferro-Resonance for Testing Electrotechnical Equipment in Distribution Devices with Increased Voltage

    Directory of Open Access Journals (Sweden)

    Ye. V. Dmitriev

    2006-01-01

    Full Text Available On the basis of the developed device for protection against of ferro-resonant and high-frequency cumulative over-voltages an algorithm for obtaining a voltage imitating ferro-resonant over-voltages is proposed in the paper. This algorithm presupposes to apply a voltage to the secondary transformer side from an extraneous source is proposed.

  11. Crystal growth of electroluminescent ZnS:Cu,Cl phosphor and its TiO2 coating by sol-gel method for thick-film EL device

    International Nuclear Information System (INIS)

    Han, Sang-Do; Singh, Ishwar; Singh, Devender; Lee, You-He; Sharma, Gaytri; Han, Chi-Hwan

    2005-01-01

    Bigger-sized spherical particle of ZnS:Cu,Cl to be employed for electroluminescent (EL) device has been synthesized using a new eutectic mixture as flux. The best composition of the flux was the mixture of BaCl 2 .2H 2 O, MgCl 2 .6H 2 O and NaCl in the mole percentage ratio of 13.8:39.9:46.2 and when the total amount of the mixture was 6% of the total weight of ZnS. The phosphor was synthesized firing at higher temperatures in two steps. First step firing at 1150 deg. C gave the hexagonal phase of the ZnS phosphor particles. Low intensity ball-milling of the phosphor pastes in solvents converted hexagonal phase partially to the cubic phase of the phosphor, which is an essential step. Mixing with copper sulfate or copper(I) halides and magnesium chloride and then firing (second step) at 750 deg. C gave a phosphor with better luminescent characteristics and converting to almost 100% cubic phase. The phosphor particles having size >0.020 mm size were sieved and coated with TiO 2 made by sol-gel process using titanium(IV)-isopropoxide as a precursor. The phosphor particles were coated twice with the TiO 2 sol and finally calcined at 400 deg C in nitrogen atmosphere. The EL devices were fabricated with the synthesized phosphor using a screen-printing method

  12. Spatial and temporal instabilities in high voltage power devices

    Energy Technology Data Exchange (ETDEWEB)

    Milady, Saeed

    2010-01-29

    Dynamic avalanche can occur during the turn-off process of high voltage bipolar devices, e.g. IGBTs and p{sup +}n{sup -}n{sup +} power diodes, that may result in spatial instabilities of the homogeneous current density distribution across the device and the formation of current filaments. Filaments may cause the destruction of the device, mainly because of the high local temperatures. The first part of this work is dedicated to the current filament behavior. The positive feedback mechanisms caused by the transient current flow through the gate capacitance of an IGBT operating under short circuit conditions may result in oscillations and temporal instabilities of the IGBT current. The oscillations may cause electromagnetic interference (EMI). Furthermore, the positive feedback mechanism may accelerate the over-heating of the device and result in a thermal run-away. This is the subject of the second part of this work. In the first part of this work using the device simulation results of power diodes the underlying physical mechanisms of the filament dynamic is investigated. Simulation results of diode structures with evenly distributed doping inhomogeneities show that, the filament motion gets smoother as the distance between the inhomogeneities decreases. Hopping to faraway inhomogeneities turns into the hopping to neighboring ones and finally a smooth motion. In homogeneous structures the slow inhibitory effect of the electron-hole plasma extraction and the fast activation, due to hole current flowing along the filament, result in a smooth filament motion. An analytical model for the filament velocity under isothermal conditions is presented that can reproduce the simulation data satisfactorily. The influence of the boundary conditions on the filament behavior is discussed. The positive beveled edge termination prohibits a long stay of the filament at the edge reducing the risk of filament pinning. Self-heating effects may turn the initially electrically triggered

  13. Construction of control and instrumentation devices of high voltage power supply of double chamber plasma nitrogen

    International Nuclear Information System (INIS)

    Saminto; Eko Priyono; Sugeng Riyanto

    2013-01-01

    A control and instrumentation devices of high voltage power supply of double chamber plasma nitrogen have been made. This device consists of the software and hardware component. Hardware component consists of SCR phase angle controller LPC-50HDA type, T100MD1616+ PLC, high voltage transformer and voltage rectifier system. Software component used a LADDER program and TBasic serves to control of the high voltage output. The components in these devices have been tested in the double chamber plasma nitrogen. Its performance meet with the design criteria that can supply of plasma nitrogen operation voltage in the range 290 Vdc to 851 Vdc with glow discharge current 0.4 A to 1.4 A. In general it can be said that the control and instrumentation devices of high voltage power supply is ready for use at the double chamber plasma nitrogen device. (author)

  14. Low temperature transient response and electroluminescence characteristics of OLEDs based on Alq3

    Science.gov (United States)

    Yuan, Chao; Guan, Min; Zhang, Yang; Li, Yiyang; Liu, Shuangjie; Zeng, Yiping

    2017-08-01

    In this work, the organic light-emitting diodes (OLEDs) based on Alq3 are fabricated. In order to make clear the transport mechanism of carriers in organic light-emitting devices at low temperature, detailed electroluminescence transient response and the current-voltage-luminescence (I-V-L) characteristics under different temperatures in those OLEDs are investigated. It founds that the acceleration of brightness increases with increasing temperature is maximum when the temperature is 200 K and it is mainly affected by the electron transport layer (Alq3). The MoO3 injection layer and the electroluminescent layer have great influence on the delay time when the temperature is 200 K. Once the temperature is greater than 250 K, the delay time is mainly affected by the MoO3 injection layer. On the contrary, the fall time is mainly affected by the electroluminescent material. The Vf is the average growth rate of fall time when the temperature increases 1 K which represents the accumulation rate of carriers. The difference between Vf caused by the MoO3 injection layer is 0.52 us/K and caused by the electroluminescent material Ir(ppy)3 is 0.73 us/K.

  15. A nanosecond high voltage pulse device for accelerator time analytical system

    International Nuclear Information System (INIS)

    Lou Binqiao; Ding Furong; Xue Zhihua; Wang Xuemei; Shen Dingyu

    2002-01-01

    A nanosecond high voltage pulse device has been designed. The pulse rise time is 10 ns. The pulse voltage reached 16000 V. This device has been used to accelerator time analytical system, its resolution time is less than 0.8%

  16. Electroluminescence color tuning between green and red from metal-oxide-semiconductor devices fabricated by spin-coating of rare-earth (terbium + europium) organic compounds on silicon

    Science.gov (United States)

    Matsuda, Toshihiro; Hattori, Fumihiro; Iwata, Hideyuki; Ohzone, Takashi

    2018-04-01

    Color tunable electroluminescence (EL) from metal-oxide-semiconductor devices with the rare-earth elements Tb and Eu is reported. Organic compound liquid sources of (Tb + Ba) and Eu with various Eu/Tb ratios from 0.001 to 0.4 were spin-coated on an n+-Si substrate and annealed to form an oxide insulator layer. The EL spectra had only peaks corresponding to the intrashell Tb3+/Eu3+ transitions in the spectral range from green to red, and the intensity ratio of the peaks was appropriately tuned using the appropriate Eu/Tb ratios in liquid sources. Consequently, the EL emission colors linearly changed from yellowish green to yellowish orange and eventually to reddish orange on the CIE chromaticity diagram. The gate current +I G current also affected the EL colors for the medium-Eu/Tb-ratio device. The structure of the surface insulator films analyzed by cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS) has four layers, namely, (Tb4O7 + Eu2O3), [Tb4O7 + Eu2O3 + (Tb/Eu/Ba)SiO x ], (Tb/Eu/Ba)SiO x , and SiO x -rich oxide. The EL mechanism proposed is that electrons injected from the Si substrate into the SiO x -rich oxide and Tb/Eu/Ba-silicate layers become hot electrons accelerated in a high electric field, and then these hot electrons excite Tb3+ and Eu3+ ions in the Tb4O7/Eu2O3 layers resulting in EL emission from Tb3+ and Eu3+ intrashell transitions.

  17. Low-threshold pure UV electroluminescence from n-ZnO:Al/i-layer/n-GaN heterojunction

    International Nuclear Information System (INIS)

    Li Songzhan; Fang Guojia; Long Hao; Wang Haoning; Huang Huihui; Mo Xiaoming; Zhao Xingzhong

    2012-01-01

    Ultraviolet (UV) electroluminescence (EL) of n-ZnO:Al (AZO)/i-layer/n-GaN heterojunctions with different intrinsic layers has been obtained. Rectifying behavior and EL spectra of the heterojunctions are investigated at room temperature. Under positive voltage, a dominant UV emission peak around ∼370 nm is observed for both AZO/i-ZnO/n-GaN and AZO/i-MgO/n-GaN heterojunctions. Nevertheless, the UV emission peak intensity of AZO/i-MgO/n-GaN heterojunction is much stronger than that of AZO/i-ZnO/n-GaN heterojunction at the same voltage. The threshold voltage of AZO/i-MgO/n-GaN heterostructured device is as low as 2.3 V. The difference of EL spectra and the emission mechanism in these devices are discussed. - Highlights: ► UV electroluminescence of n-ZnO:Al/i-layer/n-GaN heterojunctions has been obtained. ► Under positive voltage, a dominant UV emission peak around ∼370 nm is observed for both heterojunctions. ► The UV emission peak intensity of the heterojunction with i-MgO layer is much stronger than that with i-ZnO layer at the same voltage. ► The threshold voltage of n-ZnO:Al/i-MgO/n-GaN heterostructured device is as low as 2.3 V.

  18. Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

    International Nuclear Information System (INIS)

    Park, Jong Hyeok; Kim, Chulhee; Kim, Young Chul

    2009-01-01

    We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

  19. Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jong Hyeok [Department of Chemical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Chulhee [Hyperstructured Organic Materials Research Center, Department of Polymer Science and Engineering, Inha University, Incheon 402-751 (Korea, Republic of); Kim, Young Chul, E-mail: kimyc@khu.ac.k [Department of Chemical Engineering and RIC-CAMID, Kyung Hee University, Yongin-si, Kyunggi-do 499-701 (Korea, Republic of)

    2009-02-07

    We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

  20. Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

    Science.gov (United States)

    Hyeok Park, Jong; Kim, Chulhee; Kim, Young Chul

    2009-02-01

    We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

  1. Moisture exposure to different layers in organic light-emitting diodes and the effect on electroluminescence characteristics

    International Nuclear Information System (INIS)

    Liao, L. S.; Tang, C. W.

    2008-01-01

    Moisture effect on electroluminescence characteristics, including current density versus voltage, luminance versus voltage, luminous efficiency versus current density, dark spot formation, and operational stability of organic light-emitting diodes, has been systematically investigated by exposing each layer of the devices to moisture at room temperature. Moisture has a different effect on each of the interfaces or surfaces, and the influence increases as exposure time increases. There is a slight effect on the electroluminescence characteristics after the anode surface has been exposed to moisture. However, severe luminance decrease, dark spot formation, and operational stability degradation take place after the light-emitting layer or the electron-transporting layer is exposed to moisture. It is also demonstrated that the effect of moisture can be substantially reduced if the exposure to moisture is in a dark environment

  2. Optimal Operation and Dispatch of Voltage Regulation Devices Considering High Penetrations of Distributed Photovoltaic Generation

    Energy Technology Data Exchange (ETDEWEB)

    Mather, Barry A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Hodge, Brian S [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Cho, Gyu-Jung [Sungkyunkwan University; Oh, Yun-Sik [Sungkyunkwan University; Kim, Min-Sung [Sungkyunkwan University; Kim, Ji-Soo [Sungkyunkwan University; Kim, Chul-Hwan [Sungkyunkwan University

    2017-06-29

    Voltage regulation devices have been traditionally installed and utilized to support distribution voltages. Installations of distributed energy resources (DERs) in distribution systems are rapidly increasing, and many of these generation resources have variable and uncertain power output. These generators can significantly change the voltage profile for a feeder; therefore, in the distribution system planning stage of the optimal operation and dispatch of voltage regulation devices, possible high penetrations of DERs should be considered. In this paper, we model the IEEE 34-bus test feeder, including all essential equipment. An optimization method is adopted to determine the optimal siting and operation of the voltage regulation devices in the presence of distributed solar power generation. Finally, we verify the optimal configuration of the entire system through the optimization and simulation results.

  3. Method of controlling illumination device based on current-voltage model

    DEFF Research Database (Denmark)

    2013-01-01

    The present invention relates to an illumination device comprising a number of LEDs, means for receiving an input signal, means for generating an activation signal for at least one of the LEDs based on the input signal. The illumination device comprises further means for obtaining the voltage...... and the colorimetric properties of said light emitted by LED. The present invention relates also to a method of controlling and a meted of calibrating such illumination device....... across and current through the LED and the means for generating the activation signal is adapted to generate the activating signal based on the voltage, the current and a current- voltage model related to LED. The current-voltage model defines a relationship between the current, the voltage...

  4. Electroluminescence and photosensitivity spectra of organic diode structures based on zinc complexes

    Science.gov (United States)

    Kaplunov, M. G.; Krasnikova, S. S.; Nikitenko, S. L.; Yakushchenko, I. K.

    2017-01-01

    Devices based on zinc complexes with sulphanylaminosubstituted ligands are characterized by dual function - electroluminescence (EL) and photosensitivity. Both EL and photosensitivity are associated with the formation of exciplexes.

  5. Symmetric low-voltage powering system for relativistic electronic devices

    International Nuclear Information System (INIS)

    Agafonov, A.V.; Lebedev, A.N.; Krastelev, E.G.

    2005-01-01

    A special driver for double-sided powering of relativistic magnetrons and several methods of localized electron flow forming in the interaction region of relativistic magnetrons are proposed and discussed. Two experimental installations are presented and discussed. One of them is designed for laboratory research and demonstration experiments at a rather low voltage. The other one is a prototype of a full-scale installation for an experimental research at relativistic levels of voltages on the microwave generation in the new integrated system consisting of a relativistic magnetron and symmetrical induction driver

  6. Fiscal 1999 achievement report on regional consortium research and development project. Regional consortium activity in its 3rd year (Research and development of technologies for creating novel organic electroluminescent devices); 1999 nendo shin'yuki electroluminescence device no sosei gijutsu ni kansuru kenkyu kaihatsu seika hokokusho. 3

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Development is reported of an autoluminescent planar display and a free shape novel light source based on the technology of creating organic electroluminescent (EL) devices. A small dose of desiccant is added to an inorganic amorphous protecting film, and then high reliability is attained with the film staying in service for 30,000 hours or more. Technologies of ensuring uniform luminescence on a 100 times 100mm large screen and forming a 0.2mm pitch electrode pattern are established, and a 320 times 240 dot simple matrix display is developed. Novel red luminescent materials are developed, which are luminescent materials which incorporate Eu ions as luminescent seeds and exhibit a sharp luminescent spectrum, and novel organic materials. Novel blue luminescent materials are also developed. As for white luminescent materials, two types of novel pigments are developed. Studies are under way to apply amphoteric carrier transport materials to EL devices. A novel sealing technology is established which uses a composite material made of fine glass powder and UV setting resin. A SiON-based protecting film is successfully fabricated by which the internal stress is minimized. A technology is established of fabricating a diamond-like carbon (DLC) film for the protection of electrodes and wiring circuits. (NEDO)

  7. Fiscal 1999 achievement report on regional consortium research and development project. Regional consortium activity in its 3rd year (Research and development of technologies for creating novel organic electroluminescent devices); 1999 nendo shin'yuki electroluminescence device no sosei gijutsu ni kansuru kenkyu kaihatsu seika hokokusho. 3

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    Development is reported of an autoluminescent planar display and a free shape novel light source based on the technology of creating organic electroluminescent (EL) devices. A small dose of desiccant is added to an inorganic amorphous protecting film, and then high reliability is attained with the film staying in service for 30,000 hours or more. Technologies of ensuring uniform luminescence on a 100 times 100mm large screen and forming a 0.2mm pitch electrode pattern are established, and a 320 times 240 dot simple matrix display is developed. Novel red luminescent materials are developed, which are luminescent materials which incorporate Eu ions as luminescent seeds and exhibit a sharp luminescent spectrum, and novel organic materials. Novel blue luminescent materials are also developed. As for white luminescent materials, two types of novel pigments are developed. Studies are under way to apply amphoteric carrier transport materials to EL devices. A novel sealing technology is established which uses a composite material made of fine glass powder and UV setting resin. A SiON-based protecting film is successfully fabricated by which the internal stress is minimized. A technology is established of fabricating a diamond-like carbon (DLC) film for the protection of electrodes and wiring circuits. (NEDO)

  8. Synthesis of structure of device for the technical diagnosticating of high-voltage discharge

    OpenAIRE

    Грабко, В. В.; Ковальчук, Венедикт Петрович

    2010-01-01

    The paper presents a device for control of the technical state of high-voltage discharge, which allows, not disconnecting him from power grid, to take into account a size and duration of interconnect current of discharge, and also size of remaining voltage.

  9. Device and methods for writing and erasing analog information in small memory units via voltage pulses

    Science.gov (United States)

    El Gabaly Marquez, Farid; Talin, Albert Alec

    2018-04-17

    Devices and methods for non-volatile analog data storage are described herein. In an exemplary embodiment, an analog memory device comprises a potential-carrier source layer, a barrier layer deposited on the source layer, and at least two storage layers deposited on the barrier layer. The memory device can be prepared to write and read data via application of a biasing voltage between the source layer and the storage layers, wherein the biasing voltage causes potential-carriers to migrate into the storage layers. After initialization, data can be written to the memory device by application of a voltage pulse between two storage layers that causes potential-carriers to migrate from one storage layer to another. A difference in concentration of potential carriers caused by migration of potential-carriers between the storage layers results in a voltage that can be measured in order to read the written data.

  10. InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices

    Science.gov (United States)

    Gherasoiu, I.; Yu, K. M.; Reichertz, L.; Walukiewicz, W.

    2015-09-01

    PN junctions are basic building blocks of many electronic devices and their performance depends on the structural properties of the component layers and on the type and the amount of the doping impurities incorporated. Magnesium is the common p-type dopant for nitride semiconductors while silicon and more recently germanium are the n-dopants of choice. In this paper, therefore we analyze the quantitative limits for Mg and Ge incorporation on GaN and InGaN with high In content. We also discuss the challenges posed by the growth and characterization of InGaN pn-junctions and we discuss the properties of large area, long wavelength nanocolumn LEDs grown on silicon (1 1 1) by PA-MBE.

  11. Electroluminescence from graphene excited by electron tunneling

    International Nuclear Information System (INIS)

    Beams, Ryan; Bharadwaj, Palash; Novotny, Lukas

    2014-01-01

    We use low-energy electron tunneling to excite electroluminescence in single layer graphene. Electrons are injected locally using a scanning tunneling microscope and the luminescence is analyzed using a wide-angle optical imaging system. The luminescence can be switched on and off by inverting the tip–sample bias voltage. The observed luminescence is explained in terms of a hot luminescence mechanism. (paper)

  12. Cermet insert high voltage holdoff for ceramic/metal vacuum devices

    Science.gov (United States)

    Ierna, William F.

    1987-01-01

    An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

  13. Cermet insert high voltage holdoff improvement for ceramic/metal vacuum devices

    Science.gov (United States)

    Ierna, W.F.

    1986-03-11

    An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

  14. Classification of methods for measuring current-voltage characteristics of semiconductor devices

    Directory of Open Access Journals (Sweden)

    Iermolenko Ia. O.

    2014-06-01

    Full Text Available It is shown that computer systems for measuring current-voltage characteristics are very important for semiconductor devices production. The main criteria of efficiency of such systems are defined. It is shown that efficiency of such systems significantly depends on the methods for measuring current-voltage characteristics of semiconductor devices. The aim of this work is to analyze existing methods for measuring current-voltage characteristics of semiconductor devices and to create the classification of these methods in order to specify the most effective solutions in terms of defined criteria. To achieve this aim, the most common classifications of methods for measuring current-voltage characteristics of semiconductor devices and their main disadvantages are considered. Automated and manual, continuous, pulse, mixed, isothermal and isodynamic methods for measuring current-voltage characteristics are analyzed. As a result of the analysis and generalization of existing methods the next classification criteria are defined: the level of automation, the form of measurement signals, the condition of semiconductor device during the measurements, and the use of mathematical processing of the measurement results. With the use of these criteria the classification scheme of methods for measuring current-voltage characteristics of semiconductor devices is composed and the most effective methods are specified.

  15. Method for Aluminum Oxide Thin Films Prepared through Low Temperature Atomic Layer Deposition for Encapsulating Organic Electroluminescent Devices

    Directory of Open Access Journals (Sweden)

    Hui-Ying Li

    2015-02-01

    Full Text Available Preparation of dense alumina (Al2O3 thin film through atomic layer deposition (ALD provides a pathway to achieve the encapsulation of organic light emitting devices (OLED. Unlike traditional ALD which is usually executed at higher reaction n temperatures that may affect the performance of OLED, this application discusses the development on preparation of ALD thin film at a low temperature. One concern of ALD is the suppressing effect of ambient temperature on uniformity of thin film. To mitigate this issue, the pumping time in each reaction cycle was increased during the preparation process, which removed reaction byproducts and inhibited the formation of vacancies. As a result, the obtained thin film had both high uniformity and density properties, which provided an excellent encapsulation performance. The results from microstructure morphology analysis, water vapor transmission rate, and lifetime test showed that the difference in uniformity between thin films prepared at low temperatures, with increased pumping time, and high temperatures was small and there was no obvious influence of increased pumping time on light emitting performance. Meanwhile, the permeability for water vapor of the thin film prepared at a low temperature was found to reach as low as 1.5 × 10−4 g/(m2·day under ambient conditions of 25 °C and 60% relative humidity, indicating a potential extension in the lifetime for the OLED.

  16. Electroluminescence of Zn{sub 2}GeO{sub 4}:Mn through SiC whisker electric field enhancement

    Energy Technology Data Exchange (ETDEWEB)

    Wagstaff, Brandon, E-mail: wagstabj@mcmaster.ca [McMaster University, Department of Engineering Physics, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L8 (Canada); Kitai, Adrian, E-mail: kitaia@mcmaster.ca [McMaster University, Department of Engineering Physics, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L8 (Canada); McMaster University, Department of Materials Science and Engineering, 1280 Main Street West, Hamilton, Ontario, Canada L8S 4L8 (Canada)

    2015-11-15

    Alternating current (AC) electroluminescence of thin film oxide phosphors is well known. However in this work electroluminescence of bulk oxide powder phosphors is achieved. A new type of AC Electroluminescent (ACEL) device has been created and developed by integrating SiC whiskers into a phosphor matrix composed of manganese-activated zinc germanate (Zn{sub 2}GeO{sub 4}:Mn{sup 2+}). The conductive SiC whiskers enhance the average electric field in specific regions of the phosphor such that localized breakdown of the phosphor occurs, thus emitting green light. This field enhancement allows light emission to occur in thick film oxide powder phosphors and is notably the first time that bright and reasonably efficient electroluminescence of zinc germanate has been observed without using expensive thin film deposition techniques. Light emission has been achieved in thick pressed pellets using surface-deposited electrodes and the brightness-voltage characteristics of light emission are shown to be consistent with field emission of carriers from the embedded whiskers. - Highlights: • A new electroluminescent phosphor, Zn{sub 2}GeO{sub 4}Mn{sup 2+}+SiC whiskers, is proposed. • A procedure is described to fabricate a solid sample of this composite material. • Under an AC voltage, green light is emitted only in samples containing the SiC whiskers. • A brightness of 25 Cd/m{sup 2} and efficiency of 0.25 Lm/W is observed 9.6×10{sup 6} V/m. • This is notably the first time that ACEL has been observed in bulk Zn{sub 2}GeO{sub 4}Mn{sup 2+}.

  17. Innovation of High Voltage Supply Adjustment Device on Diagnostic X-Ray Machine

    International Nuclear Information System (INIS)

    Sujatno; Wiranto Budi Santoso

    2010-01-01

    Innovation of high voltage supply adjustment device on diagnostic x-ray machine has been carried out. The innovation is conducted by utilizing an electronic circuit as a high voltage adjustment device. Usually a diagnostic x-ray machine utilizes a transformer or an auto-transformer as a high voltage supply adjustment device. A high power diagnostic x-ray machine needs a high power transformer which has big physical dimension. Therefore a box control where the transformer is located has to have big physical dimension. Besides, the price of the transformer is expensive and hardly found in local markets. In this innovation, the transformer is replaced by an electronic circuit. The main component of the electronic circuit is Triac BTA-40. As adjustment device, the triac is controlled by a variable resistor which is coupled by a stepper motor. A step movement of stepper motor varies a value of resistor. The resistor value determines the triac gate voltage. Furthermore the triac will open according to the value of electrical current flowing to the gate. When the gate is open, electrical voltage and current will flow from cathode to anode of the triac. The value of these electrical voltage and current depend on gate open condition. Then this triac output voltage is feed to diagnostic x-ray machine high voltage supply. Therefore the high voltage value of diagnostic x-ray machine is adjusted by the output voltage of the electronic circuit. By using this electronic circuit, the physical dimension of diagnostic x-ray machine box control and the price of the equipment can be reduced. (author)

  18. Self-aligned photolithography for the fabrication of fully transparent high-voltage devices

    Science.gov (United States)

    Zhang, Yonghui; Mei, Zengxia; Huo, Wenxing; Wang, Tao; Liang, Huili; Du, Xiaolong

    2018-05-01

    High-voltage devices, working in the range of hundreds of volts, are indispensable elements in the driving or readout circuits for various kinds of displays, integrated microelectromechanical systems and x-ray imaging sensors. However, the device performances are found hardly uniform or repeatable due to the misalignment issue, which are extremely common for offset drain high-voltage devices. To resolve this issue, this article reports a set of self-aligned photolithography technology for the fabrication of high-voltage devices. High-performance fully-transparent high-voltage thin film transistors, diodes and logic inverters are successfully fabricated with this technology. Unlike other self-aligned routes, opaque masks are introduced on the backside of the transparent substrate to facilitate proximity exposure method. The photolithography process is simulated and analyzed with technology computer aided design simulation to explain the working principle of the proximity exposure method. The substrate thickness is found to be vital for the implementation of this technology based on both simulation and experimental results. The electrical performance of high-voltage devices is dependent on the offset length, which can be delicately modulated by changing the exposure dose. The presented self-aligned photolithography technology is proved to be feasible in high-voltage circuits, demonstrating its huge potential in practical industrial applications.

  19. A Stretchable Alternating Current Electroluminescent Fiber

    Directory of Open Access Journals (Sweden)

    Dan Hu

    2018-01-01

    Full Text Available Flexible, stretchable electroluminescent fibers are of significance to meet the escalating requirements of increasing complexity and multifunctionality of smart electronics. We report a stretchable alternating current electroluminescent (ACEL fiber by a low-cost and all solution-processed scalable process. The ACEL fiber provides high stretchability, decent light-emitting performance, with excellent stability and nearly zero hysteresis. It can be stretched up to 80% strain. Our ACEL fiber device maintained a stable luminance for over 6000 stretch-release cycles at 50% strain. The mechanical stretchability and optical stability of our ACEL fiber device provides new possibilities towards next-generation stretchable displays, electronic textiles, advanced biomedical imaging and lighting, conformable visual readouts in arbitrary shapes, and novel health-monitoring devices.

  20. Silicon nanowire hot carrier electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Plessis, M. du, E-mail: monuko@up.ac.za; Joubert, T.-H.

    2016-08-31

    Avalanche electroluminescence from silicon pn junctions has been known for many years. However, the internal quantum efficiencies of these devices are quite low due to the indirect band gap nature of the semiconductor material. In this study we have used reach-through biasing and SOI (silicon-on-insulator) thin film structures to improve the internal power efficiency and the external light extraction efficiency. Both continuous silicon thin film pn junctions and parallel nanowire pn junctions were manufactured using a custom SOI technology. The pn junctions are operated in the reach-through mode of operation, thus increasing the average electric field within the fully depleted region. Experimental results of the emission spectrum indicate that the most dominant photon generating mechanism is due to intraband hot carrier relaxation processes. It was found that the SOI nanowire light source external power efficiency is at least an order of magnitude better than the comparable bulk CMOS (Complementary Metal Oxide Semiconductor) light source. - Highlights: • We investigate effect of electric field on silicon avalanche electroluminescence. • With reach-through pn junctions the current and carrier densities are kept constant. • Higher electric fields increase short wavelength radiation. • Higher electric fields decrease long wavelength radiation. • The effect of the electric field indicates intraband transitions as main mechanism.

  1. Over-voltage trigger device for Marx generators

    International Nuclear Information System (INIS)

    Sack, M.; Staengle, R.; Mueller, G.

    2011-01-01

    For treatment of plant tissue with pulsed electric fields in large scale, synchronized operation of several Marx generators is required in order to minimize the low-field regions inside the electroporation reactor and to overcome the current limitations of a single pulse circuit. Hence, the Marx generators must be triggered. If long-term operation without service is to be achieved, these generators are triggered by over-volting the first spark gap without the use of an additional electrode for ignition, which would cause increased wear. A trigger device for over-volting the first spark gap of a Marx generator has been designed. It has been tailored to replace the charging coils between the 1st and the 2nd stage of an already existing Marx generator. In order to overcome the requirements for insulation to ground potential, the trigger device is powered by the charging current of the Marx generator. This paper describes some design issues.

  2. Direct current electroluminescence in rare-earth-doped zinc sulphide

    International Nuclear Information System (INIS)

    Bryant, F.J.; Krier, A.

    1984-01-01

    Some of the properties and characteristics of rare-earth-doped zinc sulphide DCEL devices are reported. Two types of devices are discussed, co-evaporated ZnS:RE thin films and ion implanted ZnS:RE single crystal diodes. The thin film devices exhibit bright DCEL of various colours at low applied voltages (typically approximately 12 V). A study of the spectral intensities and lifetimes of the Er 3+ ion in ZnS:Er 3+ thin films is consistent with a Boltzmann energy distribution amongst the conduction electrons present in these devices. The ZnS:RE single crystal diodes fabricated in this laboratory by ion implantation are also capable of various colour DCEL. By comparing the EL emission obtained from the different rare earth dopants, erbium and neodymium are identified as the most efficient luminescence centres. Further consideration of the EL emission spectra gives evidence for the presence of inter-conduction band hot electron transitions in those devices containing rare earth dopants which are inefficent electroluminescence centres. These findings can be explained in terms of Auger processes occurring in rare earth complexes. (author)

  3. Low-Voltage Paper Isotachophoresis Device for DNA Focusing

    Science.gov (United States)

    Li, Xiang; Luo, Long; Crooks, Richard M.

    2015-01-01

    We present a new paper-based isotachophoresis (ITP) device design for focusing DNA samples having lengths ranging from 23 to at least 1517 bp. DNA is concentrated by more than two orders of magnitude within 4 min. The key component of this device is a 2 mm-long, 2 mm-wide circular paper channel formed by concertina folding a paper strip and aligning the circular paper zones on each layer. Due to the short channel length, a high electric field of ~16 kV/m is easily generated in the paper channel using two 9 V batteries. The multilayer architecture also enables convenient reclamation and analysis of the sample after ITP focusing by simply opening the origami paper and cutting out the desired layers. We profiled the electric field in the origami paper channel during ITP experiments using a nonfocusing fluorescent tracer. The result showed that focusing relies on formation and subsequent movement of a sharp electric field boundary between the leading and trailing electrolyte. PMID:26338530

  4. An easy way to measure accurately the direct magnetoelectric voltage coefficient of thin film devices

    Energy Technology Data Exchange (ETDEWEB)

    Poullain, Gilles, E-mail: gilles.poullain@ensicaen.fr; More-Chevalier, Joris; Cibert, Christophe; Bouregba, Rachid

    2017-01-15

    Tb{sub x}Dy{sub 1−x}Fe{sub 2}/Pt/Pb(Zr{sub x}, Ti{sub 1−x})O{sub 3} thin films were grown on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate by multi-target sputtering. The magnetoelectric voltage coefficient α{sup Η}{sub ΜΕ} was determined at room temperature using a lock-in amplifier. By adding, in series in the circuit, a capacitor of the same value as that of the device under test, we were able to demonstrate that the magnetoelectric device behaves as a voltage source. Furthermore, a simple way to subtract the stray voltage arising from the flow of eddy currents in the measurement set-up, is proposed. This allows the easy and accurate determination of the true magnetoelectric voltage coefficient. A large α{sup Η}{sub ΜΕ} of 8.3 V/cm. Oe was thus obtained for a Terfenol-D/Pt/PZT thin film device, without DC magnetic field nor mechanical resonance. - Highlights: • Magnetoelectric device behaves as a voltage source. • A simple way to subtract eddy currents during the measurement, is proposed.

  5. Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.

    Science.gov (United States)

    Kim, Wonjae; Riikonen, Juha; Li, Changfeng; Chen, Ya; Lipsanen, Harri

    2013-10-04

    Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low VDD. Controllable characteristics also allow the compensation of variation in the unintentional doping typically observed in CVD graphene. Moreover, both p-n and n-p configurations of FETs can be achieved by electrostatic doping using the local back-gate. Therefore, the device operation can also be switched from inverter to voltage controlled resistor, opening new possibilities in using graphene in logic circuitry.

  6. Use of the Wire Cylindrical Device as Voltage Stabilizer and Regulator for Practical Purpose

    International Nuclear Information System (INIS)

    Abd EI-Maksoud, T.M.

    2008-01-01

    The present work, is intended to investigate the use of the Wire Cylindrical Corona device (WCCD) at atmospheric pressure as voltage stabilizer and regulator. In particular, it is devoted to the investigation of the dependence of the stabilization and the regulation on both cathode cylinder radius R and the limiting resistance R

  7. Verification of the short-circuit current making capability of high-voltage switching devices

    NARCIS (Netherlands)

    Smeets, R.P.P.; Linden, van der W.A.

    2001-01-01

    Switching-in of short-circuit current leads to pre-arcing in the switching device. Pre-arcing affects the ability of switchgear to close and latch. In three-phase systems, making is associated with transient voltage phenomena that may have a significant impact on the duration of the pre-arcing

  8. Spectroscopic investigation of the interfaces in new poly(9,9-dihexyl–9H-fluorene-2,7- diyl based electroluminescent devices

    Directory of Open Access Journals (Sweden)

    C. Donitsi

    2014-01-01

    Full Text Available The highest occupied and lowest unoccupied states of the new electroluminescent material poly(9,9-dihexyl–9H- fluorene-2,7-diyl (PPV-D and polyvinylcarbazole (PVK are investigated using ultraviolet photoelectron and inverse photoemission spectroscopies. Hole injection barriers are determined for interfaces between indium-tin oxide covered substrates with work function ranging from 4.4 to 4.7 eV and these two polymers. Vacuum level alignment with flat bands away from the interface is found when the interface hole barrier is 0.6 eV or larger. Band bending away from the Fermi level occurs when the hole barrier is smaller than 0.6 eV. This is due to the accumulation charges at the interface with the polymer when the injection barrier is small. The resulting field bends the polymer levels to limit charge incoming in the bulk of the film. The efficiency of the electroluminescent structures is strongly influenced by the different energy levels alignment at the layer interfaces.

  9. Influence of process parameters on threshold voltage and leakage current in 18nm NMOS device

    Science.gov (United States)

    Atan, Norani Binti; Ahmad, Ibrahim Bin; Majlis, Burhanuddin Bin Yeop; Fauzi, Izzati Binti Ahmad

    2015-04-01

    The process parameters are very crucial factor in the development of transistors. There are many process parameters that influenced in the development of the transistors. In this research, we investigate the effects of the process parameters variation on response characteristics such as threshold voltage (VTH) and sub-threshold leakage current (IOFF) in 18nm NMOS device. The technique to identify semiconductor process parameters whose variability would impact most on the device characteristic is realized through the process by using Taguchi robust design method. This paper presents the process parameters that influenced in threshold voltage (VTH) and sub-threshold leakage current (IOFF) which includes the Halo Implantation, Compensation Implantation, Adjustment Threshold voltage Implantation and Source/Drain Implantation. The design, fabrication and characterization of 18nm HfO2/TiSi2 NMOS device is simulated and performed via a tool called Virtual Wafer Fabrication (VWF) Silvaco TCAD Tool known as ATHENA and ATLAS simulators. These two simulators were combined with Taguchi L9 Orthogonal method to aid in the design and the optimization of the process parameters to achieve the optimum average of threshold voltage (VTH) and sub-threshold leakage current, (IOFF) in 18nm device. Results from this research were obtained; where Halo Implantation dose was identified as one of the process parameter that has the strongest effect on the response characteristics. Whereby the Compensation Implantation dose was identified as an adjustment factor to get the nominal values of threshold voltage VTH, and sub-threshold leakage current, IOFF for 18nm NMOS devices equal to 0.302849 volts and 1.9123×10-16 A/μm respectively. The design values are referred to ITRS 2011 prediction.

  10. Blue-light-emitting organic electroluminescence via exciplex emission based on a fluorene derivative

    International Nuclear Information System (INIS)

    Li Fushan; Chen Zhijian; Wei Wei; Cao Huayu; Gong Qihuang; Teng Feng; Qian Lei; Wang Yuanmin

    2004-01-01

    The synthesis of a high photoluminescence efficiency (88%, compared with tris(8-hydroxyquinoline)(Alq 3 )) organic material 9,9-Dibutyl-N,N,N,N-tetraphenyl-9H-fluorene-2,7-diamine (DTFD) via Ullmann condensation was reported. Exiciplex emission of the ITO/DTFD/2,2-[1,2-phenylenebis(oxy)]bis(N,N-diphenylacetamide)/Alq 3 /LiF/Al device was observed and the peak wavelength of the emission was measured to be 480 nm, which belongs to the blue region. A turn-on voltage as low as 4 V and maximal brightness as large as 400 cd m -2 were measured. The electroluminescence spectrum was observed to be blue-shifted with increase in applied voltage

  11. Blue-light-emitting organic electroluminescence via exciplex emission based on a fluorene derivative

    Energy Technology Data Exchange (ETDEWEB)

    Li Fushan [Department of Physics, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, 100871 (China); Chen Zhijian [Department of Physics, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, 100871 (China); Wei Wei [Department of Physics, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, 100871 (China); Cao Huayu [Department of Physics, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, 100871 (China); Gong Qihuang [Department of Physics, State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Peking University, 100871 (China); Teng Feng [Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044 (China); Qian Lei [Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044 (China); Wang Yuanmin [Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044 (China)

    2004-06-21

    The synthesis of a high photoluminescence efficiency (88%, compared with tris(8-hydroxyquinoline)(Alq{sub 3})) organic material 9,9-Dibutyl-N,N,N,N-tetraphenyl-9H-fluorene-2,7-diamine (DTFD) via Ullmann condensation was reported. Exiciplex emission of the ITO/DTFD/2,2-[1,2-phenylenebis(oxy)]bis(N,N-diphenylacetamide)/Alq{sub 3}/LiF/Al device was observed and the peak wavelength of the emission was measured to be 480 nm, which belongs to the blue region. A turn-on voltage as low as 4 V and maximal brightness as large as 400 cd m{sup -2} were measured. The electroluminescence spectrum was observed to be blue-shifted with increase in applied voltage.

  12. Electroluminescence of zinc oxide thin-films prepared via polymeric precursor and via sol-gel methods

    International Nuclear Information System (INIS)

    Lima, S.A.M.; Cremona, M.; Davolos, M.R.; Legnani, C.; Quirino, W.G.

    2007-01-01

    Zinc oxide (ZnO) is an electroluminescent (EL) material that can emit light in different regions of electromagnetic spectrum when electrically excited. Since ZnO is chemically stable, inexpensive and environmentally friendly material, its EL property can be useful to construct solid-state lamps for illumination or as UV emitter. We present here two wet chemical methods to prepare ZnO thin-films: the Pechini method and the sol-gel method, with both methods resulting in crystalline and transparent films with transmittance >85% at 550 nm. These films were used to make thin-film electroluminescent devices (TFELD) using two different insulator layers: lithium fluoride (LiF) or silica (SiO 2 ). All the devices exhibit at least two wide emission bands in the visible range centered at 420 nm and at 380 nm attributed to the electronic defects in the ZnO optical band gap. Besides these two bands, the device using SiO 2 and ZnO film obtained via sol-gel exhibits an additional band in the UV range centered at 350 nm which can be attributed to excitonic emission. These emission bands of ZnO can transfer their energy when a proper dopant is present. For the devices produced the voltage-current characteristics were measured in a specific range of applied voltage

  13. Organic Electroluminescent Sensor for Pressure Measurement

    Directory of Open Access Journals (Sweden)

    Tomohide Niimi

    2012-10-01

    Full Text Available We have proposed a novel concept of a pressure sensor called electroluminescent pressure sensor (ELPS based on oxygen quenching of electroluminescence. The sensor was fabricated as an organic light-emitting device (OLED with phosphorescent dyes whose phosphorescence can be quenched by oxygenmolecules, and with a polymer electrode which permeates oxygen molecules. The sensor was a single-layer OLED with Platinum (II octaethylporphine (PtOEP doped into poly(vinylcarbazole (PVK as an oxygen sensitive emissive layer and poly(3,4-ethylenedioxythiophene mixed with poly(styrenesulfonate (PEDOT:PSS as an oxygen permeating polymer anode. The pressure sensitivity of the fabricated ELPS sample was equivalent to that of the sensor excited by an illumination light source. Moreover, the pressure sensitivity of the sensor is equivalent to that of conventional pressure-sensitive paint (PSP, which is an optical pressure sensor based on photoluminescence.

  14. Effect of resonant tunneling on electroluminescence in nc-Si/SiO2 multilayers-based p-i-n structure

    International Nuclear Information System (INIS)

    Chen, D.Y.; Wang, Y.Y.; Sun, Y.; He, Y.J.; Zhang, G.

    2015-01-01

    P-i-n structures with SiO 2 /nc-Si/SiO 2 multilayers as intrinsic layer were prepared in conventional plasma enhanced chemical vapor deposition system. Their carrier transport and electroluminescence properties were investigated. Two resonant tunneling related current peaks with current dropping gradually under forward bias were observed in the current voltage curve. Non-uniformity of the interfaces might be responsible for the gradual dropping of the current. Electroluminescence intensity of the device under bias of 7 V which is near the resonant tunneling peak voltage of 7.2 V was weaker than that under 6.5 V. According to the Gaussian fitting results of the spectra, the intensity of the sub-peak of 650 nm originating from recombination of injected electrons and holes was decreased the most. When resonant tunneling conditions are met, it might be that most of the injected electrons participate in resonant tunneling and fewer in Pool–Frenkel tunneling, which is the main carrier transport mechanism, to contribute to electroluminescence intensity. - Highlights: • Two resonant tunneling peaks with current dropping gradually were observed. • The EL intensity of the structure under resonant tunneling peak voltage is weakened. • P–F tunneling is the main transport mechanism besides resonant tunneling

  15. Voltage-Controlled Reconfigurable Spin-Wave Nanochannels and Logic Devices

    Science.gov (United States)

    Rana, Bivas; Otani, YoshiChika

    2018-01-01

    Propagating spin waves (SWs) promise to be a potential information carrier in future spintronics devices with lower power consumption. Here, we propose reconfigurable nanochannels (NCs) generated by voltage-controlled magnetic anisotropy (VCMA) in an ultrathin ferromagnetic waveguide for SW propagation. Numerical micromagnetic simulations are performed to demonstrate the confinement of magnetostatic forward volumelike spin waves in NCs by VCMA. We demonstrate that the NCs, with a width down to a few tens of a nanometer, can be configured either into a straight or curved structure on an extended SW waveguide. The key advantage is that either a single NC or any combination of a number of NCs can be easily configured by VCMA for simultaneous propagation of SWs either with the same or different wave vectors according to our needs. Furthermore, we demonstrate the logic operation of a voltage-controlled magnonic xnor and universal nand gate and propose a voltage-controlled reconfigurable SW switch for the development of a multiplexer and demultiplexer. We find that the NCs and logic devices can even be functioning in the absence of the external-bias magnetic field. These results are a step towards the development of all-voltage-controlled magnonic devices with an ultralow power consumption.

  16. 16 CFR Figures 1 and 2 to Part 1204 - Suggested Instrumentation for Current Monitoring Device and High Voltage Facility

    Science.gov (United States)

    2010-01-01

    ... 16 Commercial Practices 2 2010-01-01 2010-01-01 false Suggested Instrumentation for Current Monitoring Device and High Voltage Facility 1 Figures 1 and 2 to Part 1204 Commercial Practices CONSUMER... Instrumentation for Current Monitoring Device and High Voltage Facility EC03OC91.008 ...

  17. Charge Carrier Transport Mechanism Based on Stable Low Voltage Organic Bistable Memory Device.

    Science.gov (United States)

    Ramana, V V; Moodley, M K; Kumar, A B V Kiran; Kannan, V

    2015-05-01

    A solution processed two terminal organic bistable memory device was fabricated utilizing films of polymethyl methacrylate PMMA/ZnO/PMMA on top of ITO coated glass. Electrical characterization of the device structure showed that the two terminal device exhibited favorable switching characteristics with an ON/OFF ratio greater than 1 x 10(4) when the voltage was swept between - 2 V and +3 V. The device maintained its state after removal of the bias voltage. The device did not show degradation after a 1-h retention test at 120 degrees C. The memory functionality was consistent even after fifty cycles of operation. The charge transport switching mechanism is discussed on the basis of carrier transport mechanism and our analysis of the data shows that the charge carrier trans- port mechanism of the device during the writing process can be explained by thermionic emission (TE) and space-charge-limited-current (SCLC) mechanism models while erasing process could be explained by the FN tunneling mechanism. This demonstration provides a class of memory devices with the potential for low-cost, low-power consumption applications, such as a digital memory cell.

  18. Scalability of voltage-controlled filamentary and nanometallic resistance memory devices.

    Science.gov (United States)

    Lu, Yang; Lee, Jong Ho; Chen, I-Wei

    2017-08-31

    Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but a rational physical basis to be relied on to design scalable devices spanning many length scales is still lacking. In particular, there is no clear criterion for switching control in those RRAM devices in which resistance changes are limited to localized nanoscale filaments that experience concentrated heat, electric current and field. Here, we demonstrate voltage-controlled resistance switching, always at a constant characteristic critical voltage, for macro and nanodevices in both filamentary RRAM and nanometallic RRAM, and the latter switches uniformly and does not require a forming process. As a result, area-scalability can be achieved under a device-area-proportional current compliance for the low resistance state of the filamentary RRAM, and for both the low and high resistance states of the nanometallic RRAM. This finding will help design area-scalable RRAM at the nanoscale. It also establishes an analogy between RRAM and synapses, in which signal transmission is also voltage-controlled.

  19. Flexible, ferroelectric nanoparticle doped polymer dispersed liquid crystal devices for lower switching voltage and nanoenergy generation

    Science.gov (United States)

    Nimmy John, V.; Varanakkottu, Subramanyan Namboodiri; Varghese, Soney

    2018-06-01

    Flexible polymer dispersed liquid crystal (F-PDLC) devices were fabricated using transparent conducting ITO/PET film. Polymerization induced phase separation (PIPS) method was used for pure and ferroelectric BaTiO3 (BTO) and ZnO doped PDLC devices. The distribution of nanoparticles in the PDLC and the formation of micro cavities were studied using field emission scanning electron microscopy (FESEM). It was observed that the addition of ferroelectric BTO nanoparticles has reduced the threshold voltage (Vth) and saturation voltage (Vsat) of FNP-PDLC by 85% and 41% respectively due to the spontaneous polarization of ferroelectric nanoparticles. The ferroelectric properties of BTO and ZnO in the fabricated devices were investigated using dynamic contact electrostatic force microscopy (DC EFM). Flexing the device can generate a potential due to the piezo-tribo electric effect of the ferroelectric nanomaterial doped in the PDLC matrix, which could be utilized as an energy generating system. The switching voltage after multiple flexing was also studied and found to be in par with non-flexing situations.

  20. Improvement of voltage stability in wind farm connection to distribution network using FACTS devices

    Energy Technology Data Exchange (ETDEWEB)

    Salehi, V.; Kahrobaee, S.; Afsharnia, S. [School of Electrical and Computer Engineering, ECE, University of Tehran (Iran)

    2006-07-01

    Increasing capacity of connected wind power generation to utilities brings new opportunities and also problems to the utilities and customers. Evolution and analyzing of the connection conditions and effects of wind farms especially on remote areas are the main aspects of developing wind power on the utilities. The problem is that these wind turbine that mostly uses induction generators, tend to drain large amounts of VARs from the grid, potentially causing low voltage and maybe voltage stability problems for the utility owner, especially in the case of large load variation on distribution feeder. To investigate the impact of large wind farms on power system voltage stability, one of the Iran's wind farms is modeled in DIgSILENT software and the simulation results shows the effect of using FACTS devices including SVC and STATCOM on power system performance. (orig.)

  1. Effect of single walled carbon nanotubes on the threshold voltage of dye based photovoltaic devices

    International Nuclear Information System (INIS)

    Chakraborty, S.; Manik, N.B.

    2016-01-01

    Carbon nanotubes are being widely used in organic photovoltaic (OPV) devices as their usage has been reported to enhance the device efficiency along with other related parameters. In this work we have studied the energy (E_c) effect of single walled carbon nanotubes (SWCNT) on the threshold voltage (V_t_h) and also on the trap states of dye based photovoltaic devices. SWCNT is added in a series of dyes such as Rose Bengal (RB), Methyl Red (MR), Malachite Green (MG) and Crystal Violet (CV). By analysing the steady state dark current–voltage (I–V) characteristics V_t_h and E_c is estimated for the different devices with and without addition of SWCNT. It is observed that on an average for all the dyes V_t_h is reduced by about 30% in presence of SWCNT. The trap energy E_c also reduces in case of all the dyes. The relation between V_t_h, E_c and total trap density is discussed. From the photovoltaic measurements it is seen that the different photovoltaic parameters change with addition of SWCNT to the dye based devices. Both the short circuit current density and fill factor are found to increase for all the dye based devices in presence of SWCNT.

  2. Simulating threshold voltage shift of MOS devices due to radiation in the low-dose range

    CERN Document Server

    Wan Xin Heng; Gao Wen Yu; Huang Ru; Wang Yang Yuan

    2002-01-01

    An analytical MOSFET threshold voltage shift model due to radiation in the low-dose range has been developed for circuit simulations. Experimental data in the literature shows that the model predictions are in good agreement. It is simple in functional form and hence computationally efficient. It can be used as a basic circuit simulation tool for analysing MOSFET exposed to a nuclear environment up to about 1 Mrad(Si). In accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated PMOS devices. However, if the radiation sensitivity is defined in the way authors did it, the results indicated NMOS rather than PMOS devices are more sensitive, specially at low doses. This is important from the standpoint of their possible application in dosimetry

  3. Temperature dependence of electron mobility, electroluminescence and photoluminescence of Alq{sub 3} in OLED

    Energy Technology Data Exchange (ETDEWEB)

    Mu Haichuan; White, Dan; Sharpton, Buck [Office of Electronic Miniaturization, University of Alaska at Fairbanks, AK 99701 (United States); Klotzkin, David [Department of Electrical and Computer Engineering and Computer Sciences, University of Cincinnati, Cincinnati, OH 45221 (United States); De Silva, Ajith; Wagner, Hans Peter [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States)], E-mail: fnhm@uaf.edu

    2008-12-07

    The correlation of electroluminescence (EL), photoluminescence (PL) and electron mobility were investigated over temperature from 60 to 300 K in small-molecule organic light emitting diode (OLED) structures. The devices consisted of ITO/PEDOT(50 nm)/TPD(50 nm)/Alq{sub 3}(60 nm)/LiF(1 nm)/Al(90 nm), and were fabricated with high-vacuum sublimation/evaporation in a cross-linked configuration. Electron mobility was measured using an ac analysis of the device optical modulation characteristics, while PL and EL were measured by measuring optical power out at fixed pump power of 1 mW, and analysis of dc brightness-voltage (L-V) characteristics, respectively. PL intensity and mobility had a clear maximum at around 220 K, while EL efficiency was constant below 220 K and decrease monotonically above. The reason for the temperature dependent EL, PL and electron mobility behaviour will be discussed.

  4. Electronic Devices for Controlling the Very High Voltage in the ALICE TPC Detector

    CERN Document Server

    Boccioli, Marco

    2007-01-01

    The Time Projection Chamber (TPC) is the core of the ALICE experiment at CERN. The TPC Very High Voltage project covers the development of the control system for the power supply that generates the 100kV necessary for the drift field in the TPC. This paper reports on the project progress, introducing the control system architecture from the electronics up to the control level. All the electronic devices will be described, highlighting their communication issues, and the challenges in integrating these devices in a PLC-based control system.

  5. Breakdown voltage mapping through voltage dependent ReBEL intensity imaging of multi-crystalline Si solar cells

    Science.gov (United States)

    Dix-Peek, RM.; van Dyk, EE.; Vorster, FJ.; Pretorius, CJ.

    2018-04-01

    Device material quality affects both the efficiency and the longevity of photovoltaic (PV) cells. Therefore, identifying these defects can be beneficial in the development of more efficient and longer lasting PV cells. In this study, a combination of spatially-resolved, electroluminescence (EL), and light beam induced current (LBIC) measurements, were used to identify specific defects and features of a multi-crystalline Si PV cells. In this study, a novel approach is used to map the breakdown voltage of a PV cell through voltage dependent Reverse Bias EL (ReBEL) intensity imaging.

  6. Modelling electroluminescence in liquid argon

    International Nuclear Information System (INIS)

    Stewart, D Y; Barker, G J; Bennieston, A J; Harrison, P F; McConkey, N; Morgan, B; Ramachers, Y A; Lightfoot, P K; Robinson, M; Spooner, N J C; Thompson, L

    2010-01-01

    We present Monte-Carlo simulations of electron transport through liquid argon motivated by our recent observation of electroluminescence light emanating from a thick gaseous electron multiplier (THGEM) in a liquid argon volume. All known elastic and inelastic reaction cross-sections have been accounted for, providing electroluminescence light yield predictions for arbitrary electrostatic fields. This study concludes that the large field gradients needed to produce electroluminescence cannot be accounted for by straightforward electrostatic field calculations based on ideal THGEM holes, suggesting that further experimental investigations are required.

  7. Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening.

    Science.gov (United States)

    Li, Wei; Wang, Shaolei; Hu, Mingyue; He, Sufeng; Ge, Pengpeng; Wang, Jing; Guo, Yan Yan; Zhaowei, Liu

    2015-07-03

    In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO2multilayers. An amorphous Si/SiO2 multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO2 multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO2 multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications.

  8. Electroluminescence and phototrigger effect in single crystals of GaSxSe1-x alloys

    International Nuclear Information System (INIS)

    Kyazym-Zade, A. G.; Salmanov, V. M.; Mokhtari, A. G.; Dadashova, V. V.; Agaeva, A. A.

    2008-01-01

    The effects of switching and electroluminescence as well as the interrelation between these effects in single crystals of GaS x Se 1-x alloys are detected and studied. It is established that the threshold voltage for switching depends on temperature, resistivity, and composition of alloys, and also on the intensity and spectrum of photoactive light. As a result, a phototrigger effect is observed; this effect arises under irradiation with light from the fundamental-absorption region. Electroluminescence is observed in the subthreshold region of the current-voltage characteristic; the electroluminescence intensity decreases drastically to zero as the sample is switched from a high-resistivity state to a low-resistivity state. Experimental data indicating that the electroluminescence and the switching effect are based on the injection mechanism (as it takes place in other layered crystals of the III-V type) are reported

  9. Comparison of electroluminescence intensity and photocurrent of polymer based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hoyer, Ulrich; Swonke, Thomas; Auer, Richard [Bayerisches Zentrum fuer Angewandte Energieforschung e.V., Erlangen (Germany); Pinna, Luigi; Brabec, Christoph J. [Bayerisches Zentrum fuer Angewandte Energieforschung e.V., Erlangen (Germany); I-MEET, University Erlangen (Germany); Stubhan, Tobias; Li, Ning [I-MEET, University Erlangen (Germany)

    2011-11-15

    The reciprocity theorem for solar cell predicts a linear relation between electroluminescence emission and photovoltaic quantum efficiency and an exponential dependence of the electroluminescence signal on the applied voltage. Both dependencies are experimentally verified for polymer based solar cells in this paper. Furthermore it is shown, that electroluminescence imaging of organic solar cells has the potential to visualize the photocurrent distribution significantly faster than standard laser beam induced current mapping (LBIC) techniques. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Integration of dispenser-printed ultra-low-voltage thermoelectric and energy storage devices

    International Nuclear Information System (INIS)

    Wang, Z; Chen, A; Winslow, R; Madan, D; Nill, M; Wright, P K; Juang, R C; Evans, J W

    2012-01-01

    This paper reports on an integrated energy harvesting prototype that consists of dispenser-printed thermoelectric energy harvesting and electrochemical energy storage devices. Parallel-connected thermoelectric devices with low internal resistances were designed, fabricated and characterized. The use of a commercially available dc-to-dc converter was explored to step-up a 27.1 mV input voltage from a printed thermoelectric device to a regulated 2.34 V output at a maximum of 34% conversion efficiency. The regulated power succeeds in charging dispenser-printed, zinc-based micro-batteries with charging efficiencies of up to 67%. The prototype presented in this work demonstrates the feasibility of deploying a printable, cost-effective and perpetual power solution for practical wireless sensor network applications. (paper)

  11. Recent progress of ultrahigh voltage SiC devices for particle accelerator

    International Nuclear Information System (INIS)

    Fukuda, Kenji; Tsuji, Takashi; Shiomi, Hiromu; Mizushima, Tomonori; Yonezawa, Yoshiyuki; Kondo, Chikara; Otake, Yuji

    2016-01-01

    Silicon carbide (SiC) is the promising material for next power electronics technology used in the field such as HEV, EV, and railway, electric power infrastructure. SiC enables power devices with low loss to easily operate in an ultrahigh-voltage region because of the high breakdown electric field of SiC. In this paper, we report static and dynamic electric performances of 3300 V class SiC SBDs, IE-MOSFETs, >10 kV PiN diodes and IE-IGBTs. Especially, the electrical characteristics of IE-IGBT with the blocking voltage of 16.5 kV indicate the sufficient ability to convert the thyratron in high power RF system of an accelerator. (author)

  12. A new SOI high-voltage device with a step-thickness drift region and its analytical model for the electric field and breakdown voltage

    International Nuclear Information System (INIS)

    Luo Xiaorong; Zhang Wei; Zhang Bo; Li Zhaoji; Yang Shouguo; Zhan Zhan; Fu Daping

    2008-01-01

    A new SOI high-voltage device with a step-thickness drift region (ST SOI) and its analytical model for the two-dimension electric field distribution and the breakdown voltage are proposed. The electric field in the drift region is modulated and that of the buried layer is enhanced by the variable thickness SOI layer, thereby resulting in the enhancement of the breakdown voltage. Based on the Poisson equation, the expression for the two-dimension electric field distribution is presented taking the modulation effect into account, from which the RESURF (REduced SURface Field) condition and the approximate but explicit expression for the maximal breakdown voltage are derived. The analytical model can explain the effects of the device parameters, such as the step height and the step length of the SOI layer, the doping concentration and the buried oxide thickness, on the electric field distribution and the breakdown voltage. The validity of this model is demonstrated by a comparison with numerical simulations. Improvement on both the breakdown voltage and the on-resistance (R on ) for the ST SOI is obtained due to the variable thickness SOI layer

  13. Electroluminescence and photosensitivity spectra of organic diode structures based on zinc complexes

    International Nuclear Information System (INIS)

    Kaplunov, M.G.; Krasnikova, S.S.; Nikitenko, S.L.; Yakushchenko, I.K.

    2017-01-01

    Devices based on zinc complexes with sulphanylaminosubstituted ligands are characterized by dual function – electroluminescence (EL) and photosensitivity. Both EL and photosensitivity are associated with the formation of exciplexes.

  14. Protection relay of phase-shifting device with thyristor switch for high voltage power transmission lines

    Science.gov (United States)

    Lachugin, V. F.; Panfilov, D. I.; Akhmetov, I. M.; Astashev, M. G.; Shevelev, A. V.

    2014-12-01

    Problems of functioning of differential current protection systems of phase shifting devices (PSD) with mechanically changed coefficient of transformation of shunt transformer are analyzed. Requirements for devices of protection of PSD with thyristor switch are formulated. Based on use of nonlinear models of series-wound and shunt transformers of PSD modes of operation of major protection during PSD, switching to zero load operation and to operation under load and during short circuit operation were studied for testing PSD with failures. Use of the principle of duplicating by devices of differential current protection (with realization of functions of breaking) of failures of separate pares of PSD with thyristor switch was substantiated. To ensure protection sensitivity to the shunt transformer winding short circuit, in particular, to a short circuit that is not implemented in the current differential protection for PSD with mechanical switch, the differential current protection reacting to the amount of primary ampere-turns of high-voltage and low-voltage winding of this transformer was designed. Studies have shown that the use of differential current cutoff instead of overcurrent protection for the shunt transformer wndings allows one to provide the sensitivity during thyristor failure with the formation of a short circuit. The results of simulation mode for the PSD with switch thyristor designed to be installed as switching point of Voskhod-Tatarskaya-Barabinsk 220 kV transmission line point out the efficiency of the developed solutions that ensure reliable functioning of the PSD.

  15. The effect of complexation with platinum in polyfluorene derivatives: A photo- and electro-luminescence study

    International Nuclear Information System (INIS)

    Assaka, Andressa M.; Hu Bin; Mays, Jimmy; Iamazaki, Eduardo T.; Atvars, Teresa D.Z.; Akcelrud, Leni

    2011-01-01

    The synthesis and characterization of a polymeric structure containing fluorene units statistically linked to 3-cyclohexyl-thiophene and bipyridine PFOTBipy-poly[(4-hexylthiophene-2,5-diyl)(9,9-dihexyl-fluoren-2,7-diyl) -co-(bipyridine-5.5'-diyl)(9,9-dihexyl-fluoren-2,7-diyl)], is reported. The complexation with platinum was possible through the bipyridil units present in 10%, 50% and 100% content. The structure has a fluorenyl moiety between each bipyridine and thiophene groups resulting in a stable and efficient light-emitting polymeric material combining the well known emissive properties of fluorene, the charge mobility generated by thiophene and the electron-transfer properties of a metal complex as well. All the polymers were photo and electroluminescent materials, and showed phosphorescence at low temperatures. Photoluminescence properties were studied by steady state and time resolved spectroscopy and showed changes of both emission peak and relative intensity of the emission bands depending on the relative amount of the platinum complex. The electroluminescence followed the trends found for photoluminescence. The blue emission of the copolymer without platinum is due to the fluorenyl segments and for higher complex contents the emission is characteristic of the aggregates involving the bipyridinyl moieties. Therefore, emission color can be tuned by the complex content. The turn-on voltage was strongly reduced from 22 to 8 V for the 100% complexed copolymer, as compared to the device made with the non complexed one, but the luminance decreased, due to quenching or trapping effects. - Research Highlights: →Statistic copolymer containing fluorine, thiophene and bipyridine. →Complexation of platinum with platinum with bipyridine. →Electroluminescence and electrophosphorescence at low temperatures. →Emission color can be tuned by the complex content.

  16. Effects of the charge-transfer reorganization energy on the open-circuit voltage in small-molecular bilayer organic photovoltaic devices: comparison of the influence of deposition rates of the donor.

    Science.gov (United States)

    Lee, Chih-Chien; Su, Wei-Cheng; Chang, Wen-Chang

    2016-05-14

    The theoretical maximum of open-circuit voltage (VOC) of organic photovoltaic (OPV) devices has yet to be determined, and its origin remains debated. Here, we demonstrate that VOC of small-molecule OPV devices can be improved by controlling the deposition rate of a donor without changing the interfacial energy gap at the donor/acceptor interface. The measurement of external quantum efficiency and electroluminescence spectra facilitates the observation of the existence of charge transfer (CT) states. A simplified approach by reusing the reciprocity relationship for obtaining the properties of the CT states is proposed without introducing complex techniques. We compare experimental and fitting results and propose that reorganization energy is the primary factor in determining VOC instead of either the CT energy or electronic coupling term in bilayer OPV devices. Atomic force microscopy images indicate a weak molecular aggregation when a higher deposition rate is used. The results of temperature-dependent measurements suggest the importance of molecular stacking for the CT properties.

  17. Operational characteristics of a high voltage plasma focus device working with deuterium and heavy gas mixture

    International Nuclear Information System (INIS)

    Zoita, V.; Presura, R.; Gherendi, F.; Dumitrescu-Zoita, C.; Aliaga, R.

    1992-01-01

    The addition of a few neon percents to the deuterium gas filling of a medium energy plasma focus device (PFD) changes dramatically the radiation characteristics of the discharge as well as the pinch configuration. One exceptional result is the generation of high aspect ratio pinches shown clearly and reproducibly on X-ray pinhole camera images and on schlieren pictures. Another remarkable result is that these pinches which show no macroscopic instabilities copiously produce neutrons and hard X-rays. This confirms an experimental fact previously identified on a lower voltage PFD: the macroscopic instabilities do not play the decisive role in the neutronic performance of medium energy PFD's. (Author)

  18. Alternative Solder Bond Packaging Approach for High-Voltage (HV) Pulsed Power Devices

    Science.gov (United States)

    2016-09-01

    triggered into the ON-state with a fiber - optic transmitter once the capacitor has been charged up to the desired voltage of choice with a power supply...substrate, which results in a much higher conductivity compared to highly doped p-type substrates in SiC (Fig. 1). The anode layer was etched using...reactive ion etch and then the mesa of the device was etched for total isolation. The gate contact implant was followed using nitrogen in a box

  19. Surge protective device response to steep front transient in low voltage circuit

    Energy Technology Data Exchange (ETDEWEB)

    Marcuz, J.; Binczak, S.; Bilbault, J.M. [Universite de Bourgogne, Dijon (France)], Emails: jerome.marcuz@ laposte.net, stbinc@u-bourgogne.fr, bilbault@u-bourgogne.fr; Girard, F. [ADEE Electronic, Pont de Pany (France)

    2007-07-01

    Surge propagation on cables of electrical or data lines leads to a major protection problem as the number of equipment based on solid-state circuits or microprocessors increases. Sub-microsecond components of real surge waveform has to be taken into account for a proper protection even in the case of surges caused by indirect lightning effects. The response of a model of transient voltage suppressor diode based surge protection device (SPD) to fast front transient is analytically studied, then compared to simulations, including the lines connected to the SPD and to the protected equipment. (author)

  20. Anomalous Threshold Voltage Variability of Nitride Based Charge Storage Nonvolatile Memory Devices

    Directory of Open Access Journals (Sweden)

    Meng Chuan Lee

    2013-01-01

    Full Text Available Conventional technology scaling is implemented to meet the insatiable demand of high memory density and low cost per bit of charge storage nonvolatile memory (NVM devices. In this study, effect of technology scaling to anomalous threshold voltage ( variability is investigated thoroughly on postcycled and baked nitride based charge storage NVM devices. After long annealing bake of high temperature, cell’s variability of each subsequent bake increases within stable distribution and found exacerbate by technology scaling. Apparent activation energy of this anomalous variability was derived through Arrhenius plots. Apparent activation energy (Eaa of this anomalous variability is 0.67 eV at sub-40 nm devices which is a reduction of approximately 2 times from 110 nm devices. Technology scaling clearly aggravates this anomalous variability, and this poses reliability challenges to applications that demand strict control, for example, reference cells that govern fundamental program, erase, and verify operations of NVM devices. Based on critical evidence, this anomalous variability is attributed to lateral displacement of trapped charges in nitride storage layer. Reliability implications of this study are elucidated. Moreover, potential mitigation methods are proposed to complement technology scaling to prolong the front-runner role of nitride based charge storage NVM in semiconductor flash memory market.

  1. Implementation methodology for interoperable personal health devices with low-voltage low-power constraints.

    Science.gov (United States)

    Martinez-Espronceda, Miguel; Martinez, Ignacio; Serrano, Luis; Led, Santiago; Trigo, Jesús Daniel; Marzo, Asier; Escayola, Javier; Garcia, José

    2011-05-01

    Traditionally, e-Health solutions were located at the point of care (PoC), while the new ubiquitous user-centered paradigm draws on standard-based personal health devices (PHDs). Such devices place strict constraints on computation and battery efficiency that encouraged the International Organization for Standardization/IEEE11073 (X73) standard for medical devices to evolve from X73PoC to X73PHD. In this context, low-voltage low-power (LV-LP) technologies meet the restrictions of X73PHD-compliant devices. Since X73PHD does not approach the software architecture, the accomplishment of an efficient design falls directly on the software developer. Therefore, computational and battery performance of such LV-LP-constrained devices can even be outperformed through an efficient X73PHD implementation design. In this context, this paper proposes a new methodology to implement X73PHD into microcontroller-based platforms with LV-LP constraints. Such implementation methodology has been developed through a patterns-based approach and applied to a number of X73PHD-compliant agents (including weighing scale, blood pressure monitor, and thermometer specializations) and microprocessor architectures (8, 16, and 32 bits) as a proof of concept. As a reference, the results obtained in the weighing scale guarantee all features of X73PHD running over a microcontroller architecture based on ARM7TDMI requiring only 168 B of RAM and 2546 B of flash memory.

  2. Excitation spectra and forward injection electroluminescence of Er/sup 3+/ ions in ZnS

    International Nuclear Information System (INIS)

    Jiaqi, Y.; Tianren, Z.; Wenlian, L.

    1985-01-01

    Trivalent rare earth ions (RE/sup 3+/) are efficient luminescent centers for electroluminescence (EL) of thin films of II-VI compounds, which are promising display materials and attract more and more attention. The mechanism of all EL devices of RE/sup 3+/ available so far is hot electron impact excitation. Based on the analysis of excitation spectra of RE/sup 3+/ in ZnS, the authors have pointed out the possibility of a new type of EL of RE/sup 3+/ - forward injection EL, which have potential of reducing operation voltage and raising efficiency. The forward injection EL of RE/sup 3+/ has been observed and experimentally proven in ZnS:Er/sup 3+/ diode for the first time

  3. Virtually pure near-infrared electroluminescence from exciplexes at polyfluorene/hexaazatrinaphthylene interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Tregnago, G.; Fléchon, C.; Cacialli, F., E-mail: amateo@polymat.eu, E-mail: f.cacialli@ucl.ac.uk [Department of Physics and Astronomy and London Centre for Nanotechnology, University College London, London WC1E 6BT (United Kingdom); Choudhary, S. [School of Soft Matter Research, Freiburg Institute for Advanced Studies (FRIAS), Albert-Ludwigs-Universität Freiburg, Albertstraße 19, 79104 Freiburg (Germany); Institut für Organische Chemie und Biochemie, Albert-Ludwigs-Universität Freiburg, Albertstraße 21, 79104 Freiburg (Germany); Gozalvez, C. [POLYMAT, University of the Basque Country UPV/EHU, Avenida de Tolosa 72, E-20018 Donostia-San Sebastian (Spain); Mateo-Alonso, A., E-mail: amateo@polymat.eu, E-mail: f.cacialli@ucl.ac.uk [POLYMAT, University of the Basque Country UPV/EHU, Avenida de Tolosa 72, E-20018 Donostia-San Sebastian (Spain); Ikerbasque, Basque Foundation for Science, Bilbao (Spain)

    2014-10-06

    Electronic processes at the heterojunction between chemically different organic semiconductors are of special significance for devices such as light-emitting diodes (LEDs) and photovoltaic diodes. Here, we report the formation of an exciplex state at the heterojunction of an electron-transporting material, a functionalized hexaazatrinaphthylene, and a hole-transporting material, poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)diphenylamine) (TFB). The energetics of the exciplex state leads to a spectral shift of ∼1 eV between the exciton and the exciplex peak energies (at 2.58 eV and 1.58 eV, respectively). LEDs incorporating such bulk heterojunctions display complete quenching of the exciton luminescence, and a nearly pure near-infrared electroluminescence arising from the exciplex (at ∼1.52 eV) with >98% of the emission at wavelengths above 700 nm at any operational voltage.

  4. Virtually pure near-infrared electroluminescence from exciplexes at polyfluorene/hexaazatrinaphthylene interfaces

    International Nuclear Information System (INIS)

    Tregnago, G.; Fléchon, C.; Cacialli, F.; Choudhary, S.; Gozalvez, C.; Mateo-Alonso, A.

    2014-01-01

    Electronic processes at the heterojunction between chemically different organic semiconductors are of special significance for devices such as light-emitting diodes (LEDs) and photovoltaic diodes. Here, we report the formation of an exciplex state at the heterojunction of an electron-transporting material, a functionalized hexaazatrinaphthylene, and a hole-transporting material, poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)diphenylamine) (TFB). The energetics of the exciplex state leads to a spectral shift of ∼1 eV between the exciton and the exciplex peak energies (at 2.58 eV and 1.58 eV, respectively). LEDs incorporating such bulk heterojunctions display complete quenching of the exciton luminescence, and a nearly pure near-infrared electroluminescence arising from the exciplex (at ∼1.52 eV) with >98% of the emission at wavelengths above 700 nm at any operational voltage.

  5. Virtually pure near-infrared electroluminescence from exciplexes at polyfluorene/hexaazatrinaphthylene interfaces

    Science.gov (United States)

    Tregnago, G.; Fléchon, C.; Choudhary, S.; Gozalvez, C.; Mateo-Alonso, A.; Cacialli, F.

    2014-10-01

    Electronic processes at the heterojunction between chemically different organic semiconductors are of special significance for devices such as light-emitting diodes (LEDs) and photovoltaic diodes. Here, we report the formation of an exciplex state at the heterojunction of an electron-transporting material, a functionalized hexaazatrinaphthylene, and a hole-transporting material, poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)diphenylamine) (TFB). The energetics of the exciplex state leads to a spectral shift of ˜1 eV between the exciton and the exciplex peak energies (at 2.58 eV and 1.58 eV, respectively). LEDs incorporating such bulk heterojunctions display complete quenching of the exciton luminescence, and a nearly pure near-infrared electroluminescence arising from the exciplex (at ˜1.52 eV) with >98% of the emission at wavelengths above 700 nm at any operational voltage.

  6. Electronic structure of the polymer-cathode interface of an organic electroluminescent device investigated using operando hard x-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ikeuchi, J.; Hamamatsu, H.; Miyamoto, T. [Sumitomo Chemical Co., Ltd., Advanced Materials Research Laboratory, 6 Kitahara, Tsukuba, Ibaraki 300-3294 (Japan); Tanaka, S. [Sumitomo Chemical Co., Ltd., Tsukuba Material Development Laboratory, 6 Kitahara, Tsukuba, Ibaraki 300-3294 (Japan); Yamashita, Y.; Yoshikawa, H.; Ueda, S. [National Institute for Materials Science, Synchrotron X-ray Station at SPring-8, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

    2015-08-28

    The electronic structure of a polymer-cathode interface of an operating organic light-emitting diode (OLED) was directly investigated using hard X-ray photoelectron spectroscopy (HAXPES). The potential distribution profile of the light-emitting copolymer layer as a function of the depth under the Al/Ba cathode layer in the OLED depended on the bias voltage. We found that band bending occurred in the copolymer of 9,9-dioctylfluorene (50%) and N-(4-(2-butyl)-phenyl)diphenylamine (F8-PFB) layer near the cathode at 0 V bias, while a linear potential distribution formed in the F8-PFB when a bias voltage was applied to the OLED. Direct observation of the built-in potential and that band bending formed in the F8-PFB layer in the operating OLED suggested that charges moved in the F8-PFB layer before electron injection from the cathode.

  7. Electronic structure of the polymer-cathode interface of an organic electroluminescent device investigated using operando hard x-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Ikeuchi, J.; Hamamatsu, H.; Miyamoto, T.; Tanaka, S.; Yamashita, Y.; Yoshikawa, H.; Ueda, S.

    2015-01-01

    The electronic structure of a polymer-cathode interface of an operating organic light-emitting diode (OLED) was directly investigated using hard X-ray photoelectron spectroscopy (HAXPES). The potential distribution profile of the light-emitting copolymer layer as a function of the depth under the Al/Ba cathode layer in the OLED depended on the bias voltage. We found that band bending occurred in the copolymer of 9,9-dioctylfluorene (50%) and N-(4-(2-butyl)-phenyl)diphenylamine (F8-PFB) layer near the cathode at 0 V bias, while a linear potential distribution formed in the F8-PFB when a bias voltage was applied to the OLED. Direct observation of the built-in potential and that band bending formed in the F8-PFB layer in the operating OLED suggested that charges moved in the F8-PFB layer before electron injection from the cathode

  8. Electronic structure of the polymer-cathode interface of an organic electroluminescent device investigated using operando hard x-ray photoelectron spectroscopy

    Science.gov (United States)

    Ikeuchi, J.; Hamamatsu, H.; Miyamoto, T.; Tanaka, S.; Yamashita, Y.; Yoshikawa, H.; Ueda, S.

    2015-08-01

    The electronic structure of a polymer-cathode interface of an operating organic light-emitting diode (OLED) was directly investigated using hard X-ray photoelectron spectroscopy (HAXPES). The potential distribution profile of the light-emitting copolymer layer as a function of the depth under the Al/Ba cathode layer in the OLED depended on the bias voltage. We found that band bending occurred in the copolymer of 9,9-dioctylfluorene (50%) and N-(4-(2-butyl)-phenyl)diphenylamine (F8-PFB) layer near the cathode at 0 V bias, while a linear potential distribution formed in the F8-PFB when a bias voltage was applied to the OLED. Direct observation of the built-in potential and that band bending formed in the F8-PFB layer in the operating OLED suggested that charges moved in the F8-PFB layer before electron injection from the cathode.

  9. Medium-voltage switching devices: State-of-the art on technical standards; Mittelspannungs-Schaltanlagen: Stand der technischen Normen

    Energy Technology Data Exchange (ETDEWEB)

    Voss, Gerhard [Ingenieurbuero IGV Elektrotechnik, Ladenburg (Germany)

    2008-11-15

    With enhanced exchange box systems many low voltage switch devices can be equipped more compact (less volume demand), cost friendly and more reliable because of advanced arc discharge safety engineering. Presented is utilization and operation in the facility managment and industrial applications in detail. In the last years operation-important standards have been revised for planners and users. So users and planners have to occupy with new standards for medium-voltage switching devices. This knowledge forms the conditions to design devices in future extensively to individual demands of the company and according to standards. (GL)

  10. Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

    Science.gov (United States)

    Degtiarenko, Pavel V [Williamsburg, VA; Popov, Vladimir E [Newport News, VA

    2011-03-22

    A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

  11. Bidirectional electroluminescence from p-SnO2/i-MgZnO/n-ZnO heterojunction light-emitting diodes

    International Nuclear Information System (INIS)

    Yang, Yanqin; Li, Songzhan; Liu, Feng; Zhang, Nangang; Liu, Kan; Wang, Shengxiang; Fang, Guojia

    2017-01-01

    Light-emitting diodes based on p-SnO 2 /i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p-SnO 2 /i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.

  12. Bidirectional electroluminescence from p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Yanqin [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Li, Songzhan, E-mail: liszhan@whu.edu.cn [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Liu, Feng; Zhang, Nangang; Liu, Kan [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Wang, Shengxiang, E-mail: sxwang@wtu.edu.cn [School of Electronic and Electrical Engineering, Hubei Collaborative Innovation Center of Textile Industrial Chain Generic Technology, Wuhan Textile University, Wuhan 430073 (China); Fang, Guojia [Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan 430072 (China)

    2017-06-15

    Light-emitting diodes based on p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p-SnO{sub 2}/i-MgZnO/n-ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases.

  13. Broadband electroluminescence in fullerene crystals

    International Nuclear Information System (INIS)

    Werner, A.T.; Anders, J.; Byrne, H.J.; Maser, W.K.; Kaiser, M.; Mittelbach, A.; Roth, S.

    1993-01-01

    The observation of electroluminescence from crystalline fullerenes is described. A broad band emission spectrum, extending from 400nm to 1100nm is observed. The spectrum has a primary maximum at 920nm and a weaker feature centered on 420nm. The spectral characteristics are independent of the applied field and the longer wavelength region is identical to that measured in the high excitation density photoluminescence spectrum. In addition, the electroluminescence intensity increases with the cube of the injection current, strengthening the association to the nonlinear phenomena observed in the highly excited state of fullerenes. (orig.)

  14. Preparation and characterization of electroluminescent devices based on complexes of β-diketonates of Tb3+, Eu3+, Gd3+ ions with macrocyclic ligands and UO22+ films

    International Nuclear Information System (INIS)

    Gibelli, Edison Bessa

    2010-01-01

    Complexes containing Rare Earth ions are of great interest in the manufacture of electro luminescent devices as organic light emitting devices (OLED). These devices, using rare earth trivalent ions (TR 3+ ) as emitting centers, show high luminescence with extremely fine spectral bands due to the structure of their energy levels, long life time and high quantum efficiency. This work reports the preparation of Rare Earth β-diketonate complexes (Tb 3+ , Eu 3+ and Gd 3+ ) and (tta - thenoyltrifluoroacetonate and acac - acetylacetonate) containing a ligand macrocyclic crown ether (DB18C6 - dibenzo18coroa6) and polymer films of UO 2 2+ . The materials were characterized by complexometric titration with EDTA, CH elemental analysis, near infrared absorption spectroscopy, thermal analysis, X-ray diffraction (powder method) and luminescence spectroscopy. For manufacturing the OLED it was used the technique of deposition of thin films by physical vapor (PVD, Physical Vapor Deposition). (author)

  15. Development of a prototype solid state fault current limiting and interrupting device for low voltage distribution networks.

    OpenAIRE

    Ahmed, M.; Putrus, G. A.; Ran, L.; Penlington, R.

    2006-01-01

    This paper describes the development of a solid-state Fault Current Limiting and Interrupting Device (FCLID) suitable for low voltage distribution networks. The main components of the FCLID are a bidirectional semiconductor switch that can disrupt the short-circuit current, and a voltage clamping element that helps in controlling the current and absorbing the inductive energy stored in the network during current interruption. Using a hysteresis type control algorithm, the short-circuit curren...

  16. Optimum DMOS cell doping profiles for high-voltage discrete and integrated device technologies

    Science.gov (United States)

    Shenai, Krishna

    1992-05-01

    It is shown that the implantation and activation sequences of B and As result in significant variations in the contact resistance and p-base sheet resistance beneath the n+-source diffusion of a DMOSFET cell. For identical process parameters, the contact resistance of As-doped n+ silicon was significantly improved when high-dose B was implanted due to higher As surface concentration. The SUPREM III process modeling results were found to be in qualitative agreement with the measured spreading resistance profiles and the discrepancies could be attributed to larger high-temperature diffusion constants used in SUPREM III and the coupled As-B diffusion/activation effects that are not accounted for in process modeling. The experimental results are discussed within the framework of fabricating high-performance DMOSFET cells and CMOS high-voltage devices on the same chip for discrete and smart-power applications.

  17. Voltage regulated hybrid DC power source using supercapacitors as energy storage device

    International Nuclear Information System (INIS)

    Ayad, Mohamed-Yacine; Pierfederici, Serge; Rael, Stephane; Davat, Bernard

    2007-01-01

    The management of embedded electrical energy needs a storage system with high dynamic performances in order to shave transient power peaks and to compensate for the intrinsic limitations of the main source. The use of supercapacitors for this storage system is quite suitable because of appropriate electrical characteristics (huge capacitance, weak series resistance, high specific energy, high specific power), direct storage (energy ready for use) and easy control by power electronic conversion. This paper deals with the conception and realisation of a voltage regulated hybrid DC power source using supercapacitors as an auxiliary storage device. Here, we present the structure, control principle and results associated with experimental validation. Our interest will be focused on the management of transient power peaks

  18. Voltage regulated hybrid DC power source using supercapacitors as energy storage device

    Energy Technology Data Exchange (ETDEWEB)

    Ayad, Mohamed-Yacine; Pierfederici, Serge; Rael, Stephane; Davat, Bernard [Groupe de Recherche en Electrotechnique et Electronique de Nancy, Centre National de la Recherche Scientifique (Unite Mixte de Recherche 7037), 2, Avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy (France)

    2007-07-15

    The management of embedded electrical energy needs a storage system with high dynamic performances in order to shave transient power peaks and to compensate for the intrinsic limitations of the main source. The use of supercapacitors for this storage system is quite suitable because of appropriate electrical characteristics (huge capacitance, weak series resistance, high specific energy, high specific power), direct storage (energy ready for use) and easy control by power electronic conversion. This paper deals with the conception and realisation of a voltage regulated hybrid DC power source using supercapacitors as an auxiliary storage device. Here, we present the structure, control principle and results associated with experimental validation. Our interest will be focused on the management of transient power peaks. (author)

  19. Process optimization of a deep trench isolation structure for high voltage SOI devices

    International Nuclear Information System (INIS)

    Zhu Kuiying; Qian Qinsong; Zhu Jing; Sun Weifeng

    2010-01-01

    The process reasons for weak point formation of the deep trench on SOI wafers have been analyzed in detail. An optimized trench process is also proposed. It is found that there are two main reasons: one is over-etching laterally of the silicon on the surface of the buried oxide caused by a fringe effect; and the other is the slow growth rate of the isolation oxide in the concave silicon corner of the trench bottom. In order to improve the isolation performance of the deep trench, two feasible ways for optimizing the trench process are proposed. The improved process thickens the isolation oxide and rounds sharp silicon corners at their weak points, increasing the applied voltage by 15-20 V at the same leakage current. The proposed new trench isolation process has been verified in the foundry's 0.5-μm HV SOI technology. (semiconductor devices)

  20. Improving breakdown voltage performance of SOI power device with folded drift region

    Science.gov (United States)

    Qi, Li; Hai-Ou, Li; Ping-Jiang, Huang; Gong-Li, Xiao; Nian-Jiong, Yang

    2016-07-01

    A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. Project supported by the Guangxi Natural Science Foundation of China (Grant Nos. 2013GXNSFAA019335 and 2015GXNSFAA139300), Guangxi Experiment Center of Information Science of China (Grant No. YB1406), Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing of China, Key Laboratory of Cognitive Radio and Information Processing (Grant No. GXKL061505), Guangxi Key Laboratory of Automobile Components and Vehicle Technology of China (Grant No. 2014KFMS04), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

  1. Yellow-green electroluminescence of samarium complexes of 8-hydroxyquinoline

    Energy Technology Data Exchange (ETDEWEB)

    Behzad, Sara Karimi; Najafi, Ezzatollah [Department of Chemistry Shahid Beheshti University G.C., Tehran 1983963113 (Iran, Islamic Republic of); Amini, Mostafa M., E-mail: m-pouramini@sbu.ac.ir [Department of Chemistry Shahid Beheshti University G.C., Tehran 1983963113 (Iran, Islamic Republic of); Janghouri, Mohammad; Mohajerani, Ezeddin [Laser Research Institute Shahid Beheshti University G.C., Tehran 1983963113 (Iran, Islamic Republic of); Ng, Seik Weng [Department of Chemistry, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2014-12-15

    Four novel samarium complexes were prepared by reacting samarium(III) nitrate with 8-hydroxyquinoline, 2-methyl-8-hydroxyquinoline, and 1,10-phenanthroline and utilized as emitting materials in the electroluminescence device. All complexes were characterized by elemental analysis, infrared, UV–vis and {sup 1}H NMR spectroscopes and the molecular structure of a representative complex, [Sm{sub 2}(Me-HQ){sub 4}(NO{sub 3}){sub 6}] (1), was determined by single-crystal X-ray diffraction. Utilization of a π-conjugated (phenanthroline) ligand as a second ligand in the structure of the samarium complexes resulted in red shifts in both absorption and fluorescence spectra of complexes and moderately enhanced the photoluminescence intensity and the fluorescence quantum yield. The maximum emission peaks showed that a good correlation exists between the nature of the substituent group on the 8-hydroxyquinoline and the addition of the π-conjugated ligand in the structure of samarium complexes and emission wavelength. Devices with samarium(III) complexes with structure of ITO/PEDOT:PSS (90 nm)/PVK:PBD:Sm(III) complexes (75 nm)/Al (180 nm) were fabricated. In the electroluminescence (EL) spectra of the devices, a strong ligand-centered emission and narrow bands arising from the {sup 4}G{sub 5/2}→{sup 6}H{sub J} transitions (J=7/2, 9/2, and 11/2) of the samarium ion were observed for the complexes. The electroluminescent spectra of the samarium complexes were red-shifted as compared with the PVK:PBD blend. We believe that the electroluminescence performance of OLED devices based on samarium complexes relies on overlaps between the absorption of the samarium compounds and the emission of PVK:PBD. This revealed that it is possible to evaluate the electroluminescence performance of the samarium compounds-doped OLED devices based on the emission of PVK:PBD and the absorption of the dopants. - Highlights: • Four novel photoluminescence samarium complexes have been synthesized.

  2. Functionalized organic semiconductor molecules to enhance charge carrier injection in electroluminescent cell

    Science.gov (United States)

    Yalcin, Eyyup; Kara, Duygu Akin; Karakaya, Caner; Yigit, Mesude Zeliha; Havare, Ali Kemal; Can, Mustafa; Tozlu, Cem; Demic, Serafettin; Kus, Mahmut; Aboulouard, Abdelkhalk

    2017-07-01

    Organic semiconductor (OSC) materials as a charge carrier interface play an important role to improve the device performance of organic electroluminescent cells. In this study, 4,4″-bis(diphenyl amino)-1,1':3‧,1″-terphenyl-5'-carboxylic acid (TPA) and 4,4″-di-9H-carbazol-9-yl-1,1':3‧,1″-terphenyl-5'-carboxylic acid (CAR) has been designed and synthesized to modify indium tin oxide (ITO) layer as interface. Bare ITO and PEDOT:PSS coated on ITO was used as reference anode electrodes for comparison. Furthermore, PEDOT:PSS coated over CAR/ITO and TPA/ITO to observe stability of OSC molecules and to completely cover the ITO surface. Electrical, optical and surface characterizations were performed for each device. Almost all modified devices showed around 36% decrease at the turn on voltage with respect to bare ITO. The current density of bare ITO, ITO/CAR and ITO/TPA were measured as 288, 1525 and 1869 A/m2, respectively. By increasing current density, luminance of modified devices showed much better performance with respect to unmodified devices.

  3. Study of electron mobility in small molecular SAlq by transient electroluminescence method

    Science.gov (United States)

    Kumar, Pankaj; Jain, S. C.; Kumar, Vikram; Chand, Suresh; Kamalasanan, M. N.; Tandon, R. P.

    2007-12-01

    The study of electron mobility of bis(2-methyl 8-hydroxyquinoline) (triphenyl siloxy) aluminium (SAlq) by transient electroluminescence (EL) is presented. An EL device is fabricated in bilayer, ITO/N,N'-diphenyl-N, N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD)/SAlq/LiF/Al configuration. The temporal evaluation of the EL with respect to the step voltage pulse is characterized by a delay time followed by a fast initial rise, which is followed by a slower rise. The delay time between the applied electrical pulse and the onset of EL is correlated with the carrier mobility (electron in our case). Transient EL studies for SAlq have been carried out at different temperatures and different applied electric fields. The electron mobility in SAlq is found to be field and temperature dependent and calculated to be 6.9 × 10-7 cm2 V-1 s-1 at 2.5 × 106 V cm-1 and 308 K. The EL decays immediately as the voltage is turned off and does not depend on the amplitude of the applied voltage pulse or dc offset.

  4. Synthesis, structures and electroluminescence properties of CdS:In/Si nanoheterostructure array

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Ling Ling; Cai, Hong Xin; Chen, Liang [Henan Polytechnic University, School of Physics and Electronic Information Engineering, Jiaozuo (China)

    2017-10-15

    An In-doped CdS/Si nanoheterojunction (CdS:In/Si-NPA) is prepared by depositing an In-doped CdS thin film onto a Si nanoporous pillar array (Si-NPA) via a successive ionic layer adsorption and reaction method. Based on the measured J-V characteristic curve, the nanoheterojunction exhibits a good rectifying behavior with a low forward turn-on voltage (2.2 V), a small leakage current density (0.5 mA/cm{sup 2} at - 3 V) and a high reverse breakdown voltage (> 8 V). The electroluminescence (EL) measurements reveal that a broadband emerges between 400 and 700 nm, and this band is confirmed as a white light emission based on the value of the chromaticity coordinate. The EL properties, including the CIE chromaticity coordinates, Colour Rendering Index and correlated color temperature, can be tuned by the applied voltage. The generation mechanism of the EL can be well interpreted depending on the energy band structure of CdS:In/Si-NPA. The green band should be attributed to the band-edge emission of CdS and the yellow emission may be related to Cd interstitial. These results highlight the potential of CdS:In/Si-NPA as a light source for future white light emitting devices. (orig.)

  5. Kinetics of transient electroluminescence in organic light emitting diodes

    Science.gov (United States)

    Shukla, Manju; Kumar, Pankaj; Chand, Suresh; Brahme, Nameeta; Kher, R. S.; Khokhar, M. S. K.

    2008-08-01

    Mathematical simulation on the rise and decay kinetics of transient electroluminescence (EL) in organic light emitting diodes (OLEDs) is presented. The transient EL is studied with respect to a step voltage pulse. While rising, for lower values of time, the EL intensity shows a quadratic dependence on (t - tdel), where tdel is the time delay observed in the onset of EL, and finally attains saturation at a sufficiently large time. When the applied voltage is switched off, the initial EL decay shows an exponential dependence on (t - tdec), where tdec is the time when the voltage is switched off. The simulated results are compared with the transient EL performance of a bilayer OLED based on small molecular bis(2-methyl 8-hydroxyquinoline)(triphenyl siloxy) aluminium (SAlq). Transient EL studies have been carried out at different voltage pulse amplitudes. The simulated results show good agreement with experimental data. Using these simulated results the lifetime of the excitons in SAlq has also been calculated.

  6. On the correct interpretation of the low voltage regime in intrinsic single-carrier devices.

    Science.gov (United States)

    Röhr, Jason A; Kirchartz, Thomas; Nelson, Jenny

    2017-05-24

    We discuss the approach of determining the charge-carrier density of a single-carrier device by combining Ohm's law and the Mott-Gurney law. We show that this approach is seldom valid, due to the fact that whenever Ohm's law is applicable the Mott-Gurney law is usually not, and vice versa. We do this using a numerical drift-diffusion solver to calculate the current density-voltage curves and the charge-carrier density, with increasing doping concentration. As this doping concentration is increased to very large values, using Ohm's law becomes a sensible way of measuring the product of mobility and doping density in the sample. However, in the high-doping limit, the current is no longer governed by space-charge and it will no longer be possible to determine the charge-carrier mobility using the Mott-Gurney law. This leaves the value for the mobility as an unknown in the mobility-doping density product in Ohm's law. We also show that, when the charge-carrier mobility for an intrinsic semiconductor is known in advance, the carrier density is underestimated up to many orders of magnitude if Ohm's law is used. We finally seek to establish a window of conditions where the two methods can be combined to yield reasonable results.

  7. On the correct interpretation of the low voltage regime in intrinsic single-carrier devices

    International Nuclear Information System (INIS)

    Röhr, Jason A; Nelson, Jenny; Kirchartz, Thomas

    2017-01-01

    We discuss the approach of determining the charge-carrier density of a single-carrier device by combining Ohm’s law and the Mott–Gurney law. We show that this approach is seldom valid, due to the fact that whenever Ohm’s law is applicable the Mott–Gurney law is usually not, and vice versa. We do this using a numerical drift-diffusion solver to calculate the current density–voltage curves and the charge-carrier density, with increasing doping concentration. As this doping concentration is increased to very large values, using Ohm’s law becomes a sensible way of measuring the product of mobility and doping density in the sample. However, in the high-doping limit, the current is no longer governed by space-charge and it will no longer be possible to determine the charge-carrier mobility using the Mott–Gurney law. This leaves the value for the mobility as an unknown in the mobility-doping density product in Ohm’s law. We also show that, when the charge-carrier mobility for an intrinsic semiconductor is known in advance, the carrier density is underestimated up to many orders of magnitude if Ohm’s law is used. We finally seek to establish a window of conditions where the two methods can be combined to yield reasonable results. (paper)

  8. Electroluminescence Efficiency Enhancement using Metal Nanoparticles

    National Research Council Canada - National Science Library

    Soref, Richard A; Khurgin, J. B; Sun, G

    2008-01-01

    We apply the "effective mode volume" theory to evaluate enhancement of the electroluminescence efficiency of semiconductor emitters placed in the vicinity of isolated metal nanoparticles and their arrays...

  9. Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure

    International Nuclear Information System (INIS)

    Li Qi; Wang Weidong; Zhao Qiuming; Wei Xueming

    2012-01-01

    A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology (SB) is reported. The P-type epitaxial layer is embedded between an N-type drift region and an N-type substrate to block the conduction path in the off-state and change the distributions of the bulk electric field. The substrate bias strengthens the charge share effect of the drift region near the source, and the vertical electric field peak under the drain is decreased, which is especially helpful in improving the vertical breakdown voltage in a lateral power device with a thin drift region. The numerical results by MEDICI indicate that the breakdown voltage of the proposed device is increased by 97% compared with a conventional LDMOS, while maintaining a lowon-resistance. (semiconductor devices)

  10. PANI Branches onto Donor-Acceptor Copolymers: Synthesis, Characterization and Electroluminescent Properties of New 2D-Materials

    Directory of Open Access Journals (Sweden)

    Ignacio A. Jessop

    2018-05-01

    Full Text Available A new series of two-dimensional statistical conjugated polymers based on aniline and 9,9-dihexylfluorene as donor units and benzo- or naphtho-quinoxaline/thiadiazole derivatives as acceptor moieties, possessing PANI segments as side chains, were designed and synthesized. To investigate the effects of the perpendicular PANI branches on the properties of the main chain, the optical, electrochemical, morphological and electroluminescence properties were studied. The 2D materials tend to possess lower molecular weights and to absorb and to emit light red-shifted compared to the trunk 1D-polymers, in the yellow-red region of the visible spectrum. The 1D- and 2D-conjugated polymers present optical band gaps ranging from 2.15–2.55 eV, HOMO energy levels between −5.37 and −5.60 eV and LUMO energy levels between −3.02 and −3.29 eV. OLED devices based on these copolymers were fabricated. Although the performances were far from optimal due to the high turn-on voltages for which electroluminescence phenomena occur, a maximum luminescence of 55,100 cd/m2 together with a current density of 65 mA/cm2 at 18.5 V were recorded for a 2D-copolymer, PAFC6TBQ-PANI.

  11. Charge-trapping effect of doped fluorescent dye on the electroluminescent processes and its performance in polymer light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Ye Tengling; Chen Zhenyu; Chen Jiangshan [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China); Ma Dongge, E-mail: mdg1014@ciac.jl.cn [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China)

    2010-11-15

    We have measured the temperature dependence of the steady-state current-voltage (I-V) characteristics and the transient electroluminescent (EL) characteristics in 4-(dicyanomethylene)-2-t-propyl-6-(1,1,7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) doped polyfluorene devices to study the charge-trapping effect of DCJTB fluorescent dye on luminescence processes and on device performance. Physical and chemical analyses prove that DCJTB molecules serve both as electron and hole traps, and the charge-trapping effect is more sensitive against the electrons than the holes at the low dopant concentration. This intrinsic characteristic causes the electron to be injected into the emitting layer first and then trapped in the bulk, producing a strong effect on device performance.

  12. One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

    International Nuclear Information System (INIS)

    Zhang Jun; Guo Yu-Feng; Xu Yue; Lin Hong; Yang Hui; Hong Yang; Yao Jia-Fei

    2015-01-01

    A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device. (paper)

  13. Near-infrared electroluminescence emission from an n-InN nanodots/p-Si heterojunction structure

    International Nuclear Information System (INIS)

    Wu Guoguang; Du Guotong; Gao Fubin; Shen Chunsheng; Li Wancheng; Wang Hui

    2012-01-01

    An n-InN nanodots/p-Si(1 1 1) heterojunction diode was fabricated by plasma-assisted molecular beam epitaxy. The device shows clear rectifying behaviour with a turn-on voltage of approximately 1.2 V at room temperature. The near-infrared electroluminescence (EL) can be observed under forward bias, which covers a wide wavelength range. In comparison with the photoluminescence spectra, the maximum of the EL spectra has a blueshift which is probably due to the size quantization effect of small-sized InN nanodots and their stronger contribution to the EL intensity. On the other hand, there is an obvious enhancement of the less dominant transitions on the short wavelength side of the EL spectra, which may arise from the recombination of the injected holes with the extremely high-density surface electrons of InN nanodots. (paper)

  14. Optical characterization of voltage-accelerated degradation in CH3NH3PbI3 perovskite solar cells.

    Science.gov (United States)

    Handa, Taketo; Tex, David M; Shimazaki, Ai; Aharen, Tomoko; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

    2016-05-16

    We investigate the performance degradation mechanism of CH3NH3PbI3 perovskite solar cells under bias voltage in air and nitrogen atmospheres using photoluminescence and electroluminescence techniques. When applying forward bias, the power conversion efficiency of the solar cells decreased significantly in air, but showed no degradation in nitrogen atmosphere. Time-resolved photoluminescence measurements on these devices revealed that the application of forward bias in air accelerates the generation of non-radiative recombination centers in the perovskite layer buried in the device. We found a negative correlation between the electroluminescence intensity and the injected current intensity in air. The irreversible change of the perovskite grain surface in air initiates the degradation of the perovskite solar cells.

  15. Effect of γ-quanta on electroluminescent emitters with zinc sulfide luminophores

    International Nuclear Information System (INIS)

    Vershchagin, I.K.; Kokin, S.M.; Pautkina, A.V.

    1993-01-01

    The electroluminescent light sources used in data processing systems can operate under various conditions, particularly in the presence of a significant background radiation. In this work, the authors have investigated the effect of γ-irradiation on the main properties of electroluminescent emitters (ELE) prepared from polycrystalline luminophores of various grades. Such emitters are plane structures consisting of transparent and opaque electrodes and a layer of the luminophore distributed in the dielectric. The ELE were excited with a sinusoidal voltage (220 V; 0.4-1 kHz) at room temperature

  16. Efficient electroluminescence from a perylenediimide fluorophore obtained from a simple solution processed OLED

    International Nuclear Information System (INIS)

    Cespedes-Guirao, F J; Fernandez-Lazaro, F; Sastre-Santos, A; Garcia-Santamaria, S; Bolink, H J

    2009-01-01

    Simple solution processed organic light emitting diodes are used to screen the performance of two types of highly efficient, narrow band red emitting fluorescent perylenediimides (PDIs). PDIs substituted at the diimide positions seem to form aggregates in the thin film architecture as evidenced by the shifted electroluminescent spectrum. When substituted on the bay position and when used both as the emitting and the electron transporting specie, bright electroluminescence with a narrow width around 610 nm reaching 500 cd m -2 at moderate voltages was observed, demonstrating the usefulness of these fluorophores for OLED applications.

  17. Structural, morphological and electroluminescence studies of Zno:Co nanophosphor

    Science.gov (United States)

    Singh, Anju; Vishwakarma, H. L.

    2016-09-01

    The nanoparticles of zinc oxide (ZnO) doped with various concentrations of cobalt (Co) were synthesized by chemical precipitation method in the presence of capping agent polyvinylpyrrolidone (PVP). The effect of doping concentration on structural and morphological properties has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). Cell volume, bond length, texture coefficient, lattice constants and dislocation density are also studied. Here, we also compared the interplaner spacing and relative peak intensities from their standard values with different angles. Crystallite sizes have been calculated by Debye-Scherrer's formula whose values are decreasing with increase in cobalt content up to 3 %. It has been seen that the growth orientation of the prepared ZnO nanorods was (101). The XRD analysis also ensures that ZnO has a hexagonal (wurtzite) crystal structure. The electroluminescence (EL) cells were prepared by placing pure and cobalt-doped ZnO nanoparticles between ITO-coated conducting glass plate and aluminium foil. Alternating voltage of various frequencies was applied, and EL brightness at different voltages was measured and corresponding current was also recorded. The voltage dependence of electroluminescence (EL) brightness of the ZnO:Co shows exponential increase. The linear voltage-current characteristic indicates ohmic nature. The EL brightness at a particular voltage is found to increase by increasing Co doping, but for higher percentage of Co the EL brightness is reduced. It is also seen that Co does not influence the threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

  18. 30 CFR 77.802 - Protection of high-voltage circuits; neutral grounding resistors; disconnecting devices.

    Science.gov (United States)

    2010-07-01

    ... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.802 Protection... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of high-voltage circuits; neutral... grounded through a suitable resistor at the source transformers, and a grounding circuit, originating at...

  19. Unusual near-white electroluminescence of light emitting diodes based on saddle-shaped porphyrins.

    Science.gov (United States)

    Shahroosvand, Hashem; Zakavi, Saeed; Sousaraei, Ahmad; Mohajerani, Ezeddin; Mahmoudi, Malek

    2015-05-14

    In contrast to the red electroluminescence emission frequently observed in porphyrins based OLED devices, the present devices exhibit a nearly white emission with greenish yellow, yellowish green and blue green hues in the case of Fe(II)(TCPPBr6) (TCPPBr6 = β-hexabromo-meso-tetrakis-(4-phenyl carboxyl) porphyrinato), Zn(II)(TPPBr6) and Co(II)(TPPBr6), respectively.

  20. Organic solution-processible electroluminescent molecular glasses for non-doped standard red OLEDs with electrically stable chromaticity

    Energy Technology Data Exchange (ETDEWEB)

    Bi, Xiaoman; Zuo, Weiwei; Liu, Yingliang, E-mail: liuylxn@sohu.com; Zhang, Zhenru; Zeng, Cen; Xu, Shengang; Cao, Shaokui, E-mail: caoshaokui@zzu.edu.cn

    2015-10-15

    Highlights: • The D–A–D electroluminescent molecular glasses are synthesized. • Non-doped red electroluminescent film is fabricated by spin-coating. • Red OLED shows stable wavelength, luminous efficiency and chromaticity. • CIE1931 coordinate is in accord with standard red light in PAL system. - Abstract: Organic light-emitting molecular glasses (OEMGs) are synthesized through the introduction of nonplanar donor and branched aliphatic chain into electroluminescent emitters. The target OEMGs are characterized by {sup 1}H NMR, {sup 13}C NMR, IR, UV–vis and fluorescent spectra as well as elemental analysis, TG and DSC. The results indicated that the optical, electrochemical and electroluminescent properties of OEMGs are adjusted successfully by the replacement of electron-donating group. The non-doped OLED device with a standard red electroluminescent emission is achieved by spin-coating the THF solution of OEMG with a triphenylamine moiety. This non-doped red OLED device takes on an electrically stable electroluminescent performance, including the stable maximum electroluminescent wavelength of 640 nm, the stable luminous efficiency of 2.4 cd/A and the stable CIE1931 coordinate of (x, y) = (0.64, 0.35), which is basically in accord with the CIE1931 coordinate (x, y) = (0.64, 0.33) of standard red light in PAL system.

  1. Electroluminescence and Photoluminescence from a Fluorescent Cobalt Porphyrin Grafted on Graphene Oxide

    Science.gov (United States)

    Janghouri, Mohammad

    2017-10-01

    A new graphene oxide-cobalt porphyrin (GO-CoTPP) hybrid material has been used as an emissive layer in organic light-emitting diodes (OLEDs). Devices with fundamental structure of indium-doped tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS, 45 nm)/polyvinylcarbazole (PVK):2-(4-biphenyl)-5-(4- t-butylphenyl)-1,3,4-oxadiazole (PBD):GO-CoTPP (70 nm)/1,3,5-tris( N-phenylbenzimidazol-2-yl)-benzene (TPBI, 20 nm)/Al (150 nm) were fabricated. A red electroluminescence (EL) was obtained from thin-film PVK:PBD:CoTPP at 70 nm thickness. When CoTPP was covalently grafted on graphene oxide (GO) sheets, near-white EL was obtained. The white emission, which was composed of bluish green and red, is attributed to electroplex formation at the GO-CoTPP/PBD interface. Such electroplex emission between electrons and holes is a reason for the low turn-on voltage of the GO-CoTPP-based OLED. Maximum luminance efficiency of 1.43 cd/A with Commission International de l'Eclairage coordinates of 0.33 and 0.40 was achieved at current of 0.02 mA and voltage of 14 V.

  2. Bright electroluminescence from a chelate phosphine oxide Eu{sup III} complex with high thermal performance

    Energy Technology Data Exchange (ETDEWEB)

    Xu Hui [School of Chemistry and Materials, Heilongjiang University, 74 Xuefu Road, Nangang District, Harbin 150080, Heilongjiang Province (China); Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 66 Xinmofan Road, Nanjing 21003, Jiangsu Province (China); Yin Kun; Wang Lianhui [Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 66 Xinmofan Road, Nanjing 21003, Jiangsu Province (China); Huang Wei [Institute of Advanced Materials (IAM), Fudan University, 220 Handan Road, Shanghai 200433 (China)], E-mail: wei-huang@njupt.edu.cn

    2008-10-01

    The chelate phosphine oxide ligand 1,8-bis(diphenylphosphino)naphthalene oxide (NaPO) was used to prepare complex 1 tris(2-thenoyltrifluoroacetonate)(1,8-bis(diphenylphosphino)naphthalene oxide)europium(III). The rigid structure of NaPO makes 1 have more compact structure resulting in a temperature of glass transition as high as 147 deg. C, which is the highest in luminescent Eu{sup III} complexes, and a higher decomposition temperature of 349 deg. C. The improvement of carrier transfer ability of NaPO was proved by Gaussian simulation. The multi-layered electroluminescent device based on 1 had a low turn-on voltage of 6.0 V, the maximum brightness of 601 cd m{sup -2} at 21.5 V and 481.4 mA cm{sup -2}, and the excellent voltage-independent spectral stability. These properties demonstrated NaPO cannot only be favorable to form the rigid and compact complex structure, and increase the thermal and morphological stability of the complex, but also reduce the formation of the exciplex.

  3. Achievement report for fiscal 1998. Research and development of technologies for creating new organic electroluminescent devices (2nd fiscal year); 1998 nendo seika hokokusho. Shin'yuki electronics ruminessensu device no sosei gijutsu ni kansuru kenkyu kaihatsu (dai 2 nendo)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The aim of the efforts was to commercialize a multicolor, organic electroluminescent (EL) display and an energy efficient light source, to develop a highly efficient luminescent material, and to develop a protecting film for use in optical and electronic devices and technologies to seal the protecting film. Achievements in fiscal 1998 are mentioned below. The Kyushu office of Matsushita Electric Industrial Co., Ltd., manufactured a uniformly luminescent large screen, and Nisimu Electronic Industry Co., Ltd., fabricated a luminescent organic film by the wet method. As for materials, Dojindo mass-synthesized a hole transfer material, developed a new carrier transfer material, and developed a high-performance luminescent material. Daiden Co., Ltd., produced rare earth complexes and laminated pevskite. As for packaging technology, Shoei Chemical Co. developed a low-expansion glass filler, Kyushu University's Advanced Technology Joint Research Center formed an SiON protecting film on an EL device, and Fukuoka Mechanic and Electric Laboratory produced a DLC (diamond-like carbon) film. (NEDO)

  4. Tunneling electron induced molecular electroluminescence from individual porphyrin J-aggregates

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Qiushi; Zhang, Chao; Zhang, Yang, E-mail: zhyangnano@ustc.edu.cn, E-mail: zcdong@ustc.edu.cn; Zhang, Yao; Liao, Yuan; Dong, Zhenchao, E-mail: zhyangnano@ustc.edu.cn, E-mail: zcdong@ustc.edu.cn [Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China)

    2015-07-27

    We investigate molecular electroluminescence from individual tubular porphyrin J-aggregates on Au(111) by tunneling electron excitations in an ultrahigh-vacuum scanning tunneling microscope (STM). High-resolution STM images suggest a spiral tubular structure for the porphyrin J-aggregate with highly ordered “brickwork”-like arrangements. Such aggregated nanotube is found to behave like a self-decoupled molecular architecture and shows red-shifted electroluminescence characteristics of J-aggregates originated from the delocalized excitons. The positions of the emission peaks are found to shift slightly depending on the excitation sites, which, together with the changes in the observed spectral profiles with vibronic progressions, suggest a limited exciton coherence number within several molecules. The J-aggregate electroluminescence is also found unipolar, occurring only at negative sample voltages, which is presumably related to the junction asymmetry in the context of molecular excitations via the carrier injection mechanism.

  5. High voltage-derived enhancement of electric conduction in nanogap devices for detection of prostate-specific antigen

    Science.gov (United States)

    Park, Hyung Ju; Chi, Young Shik; Choi, Insung S.; Yun, Wan Soo

    2010-07-01

    We report a simple method of enhancing electric conductance in nanogap devices without any additional treatments, such as silver-enhancing process. The low electric conductance after selective immobilization of biofunctionalized gold nanoparticles in the gap region was greatly enhanced by repeated I-V scans at relatively high voltage ranges of -5 to 5 V, which was attributed to the formation of a new conduction pathway across the gap. The higher conduction state of the nanogap device showed a very stable I-V curve, which was used as an excellent measure of the existence of prostate-specific antigen.

  6. Electroluminescence from single nanowires by tunnel injection: an experimental study

    International Nuclear Information System (INIS)

    Zimmler, Mariano A; Bao Jiming; Shalish, Ilan; Yi, Wei; Yoon, Joonah; Narayanamurti, Venkatesh; Capasso, Federico

    2007-01-01

    We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure

  7. Correlation of AlGaN/GaN high-electron-mobility transistors electroluminescence characteristics with current collapse

    Science.gov (United States)

    Ohi, Shintaro; Yamazaki, Taisei; Asubar, Joel T.; Tokuda, Hirokuni; Kuzuhara, Masaaki

    2018-02-01

    We report on the correlation between the electroluminescence and current collapse of AlGaN/GaN high-electron-mobility transistors (HEMTs). Standard passivated devices suffering from severe current collapse exhibited high-intensity whitish electroluminescence confined near the drain contact. In contrast, devices with reduced current collapse resulting from oxygen plasma treatment or GaN capping showed low-intensity reddish emission across the entire gate-drain access region. A qualitative explanation of this observed correlation between the current collapse and electroluminescence is presented. Our results demonstrate that electroluminescence analysis is a powerful tool not only for identifying high-field regions but also for assessing the degree of current collapse in AlGaN/GaN HEMTs.

  8. Electroluminescence of colloidal ZnSe quantum dots

    International Nuclear Information System (INIS)

    Dey, S.C.; Nath, S.S.

    2011-01-01

    The article reports a green chemical synthesis of colloidal ZnSe quantum dots at a moderate temperature. The prepared colloid sample is characterised by UV-vis absorption spectroscopy and transmission electron microscopy. UV-vis spectroscopy reveals as-expected blue-shift with strong absorption edge at 400 nm and micrographs show a non-uniform size distribution of ZnSe quantum dots in the range 1-4 nm. Further, photoluminescence and electroluminescence spectroscopies are carried out to study optical emission. Each of the spectroscopies reveals two emission peaks, indicating band-to-band transition and defect related transition. From the luminescence studies, it can be inferred that the recombination of electrons and holes resulting from interband transition causes violet emission and the recombination of a photon generated hole with a charged state of Zn-vacancy gives blue emission. Meanwhile electroluminescence study suggests the application of ZnSe quantum dots as an efficient light emitting device with the advantage of colour tuning (violet-blue-violet). - Highlights: → Synthesis of ZnSe quantum dots by a green chemical route. → Characterisation: UV-vis absorption spectroscopy and transmission electron microscopy. → Analysis of UV-vis absorption spectrum and transmission electron micrographs. → Study of electro-optical properties by photoluminescence and electroluminescence. → Conclusion: ZnSe quantum dots can be used as LED with dual colour emission.

  9. Green–white electroluminescence and green photoluminescence of zinc complexes

    Energy Technology Data Exchange (ETDEWEB)

    Janghouri, Mohammad; Mohajerani, Ezeddin [Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Tehran 1983963113 (Iran, Islamic Republic of); Amini, Mostafa M.; Najafi, Ezzatollah [Department of Chemistry, Shahid Beheshti University, G.C., Tehran 1983963113 (Iran, Islamic Republic of)

    2014-10-15

    A series of zinc complexes has been synthesized and utilized as fluorescent materials in organic light-emitting diodes (OLEDs). All prepared complexes were characterized by elemental analysis (CHN), UV–vis, FT-IR and {sup 1}H NMR spectroscopy. The energy levels of zinc complexes were determined by cyclic voltammetry measurements. Devices with fundamental structure of ITO/PVK:PBD (50 nm)/zinc complexes/BCP (5 nm)/Alq{sub 3} (25 nm)/Al (180 nm) were fabricated. A green electroluminescence was obtained from thin film complexes at 25 nm thickness. When thickness of the complex bis(2-methylquinolin-8-olato)-bis[(acetato)-(methanol)zinc(II)] (B) in thin film decreased from 25 nm to 20, 18, and 12 nm, a white electroluminescence obtained. The white emission which was composed of blue and green attributed to the PVK:PBD blend and thickness of complex, respectively. With 12 nm thickness of complex, a maximum luminance of 4530 cd/m{sup 2} at a current density 398.32 mA/cm{sup 2} with CIE coordinates of 0.22 and 0.36 at 20 V was achieved. - Highlights: • Several new zinc complexes have been synthesized and utilized as fluorescent materials in OLEDs. • Photoluminescence emission of zinc complexes showed a red shift in respect to PVK:PBD blend. • Green electroluminescence emission from zinc complexes was achieved. • White emission has been obtained for an OLED by changing thickness of the zinc complex.

  10. Green–white electroluminescence and green photoluminescence of zinc complexes

    International Nuclear Information System (INIS)

    Janghouri, Mohammad; Mohajerani, Ezeddin; Amini, Mostafa M.; Najafi, Ezzatollah

    2014-01-01

    A series of zinc complexes has been synthesized and utilized as fluorescent materials in organic light-emitting diodes (OLEDs). All prepared complexes were characterized by elemental analysis (CHN), UV–vis, FT-IR and 1 H NMR spectroscopy. The energy levels of zinc complexes were determined by cyclic voltammetry measurements. Devices with fundamental structure of ITO/PVK:PBD (50 nm)/zinc complexes/BCP (5 nm)/Alq 3 (25 nm)/Al (180 nm) were fabricated. A green electroluminescence was obtained from thin film complexes at 25 nm thickness. When thickness of the complex bis(2-methylquinolin-8-olato)-bis[(acetato)-(methanol)zinc(II)] (B) in thin film decreased from 25 nm to 20, 18, and 12 nm, a white electroluminescence obtained. The white emission which was composed of blue and green attributed to the PVK:PBD blend and thickness of complex, respectively. With 12 nm thickness of complex, a maximum luminance of 4530 cd/m 2 at a current density 398.32 mA/cm 2 with CIE coordinates of 0.22 and 0.36 at 20 V was achieved. - Highlights: • Several new zinc complexes have been synthesized and utilized as fluorescent materials in OLEDs. • Photoluminescence emission of zinc complexes showed a red shift in respect to PVK:PBD blend. • Green electroluminescence emission from zinc complexes was achieved. • White emission has been obtained for an OLED by changing thickness of the zinc complex

  11. A high-efficiency low-voltage CMOS rectifier for harvesting energy in implantable devices.

    Science.gov (United States)

    Hashemi, S Saeid; Sawan, Mohamad; Savaria, Yvon

    2012-08-01

    We present, in this paper, a new full-wave CMOS rectifier dedicated for wirelessly-powered low-voltage biomedical implants. It uses bootstrapped capacitors to reduce the effective threshold voltage of selected MOS switches. It achieves a significant increase in its overall power efficiency and low voltage-drop. Therefore, the rectifier is good for applications with low-voltage power supplies and large load current. The rectifier topology does not require complex circuit design. The highest voltages available in the circuit are used to drive the gates of selected transistors in order to reduce leakage current and to lower their channel on-resistance, while having high transconductance. The proposed rectifier was fabricated using the standard TSMC 0.18 μm CMOS process. When connected to a sinusoidal source of 3.3 V peak amplitude, it allows improving the overall power efficiency by 11% compared to the best recently published results given by a gate cross-coupled-based structure.

  12. On-line Monitoring Device for High-voltage Switch Cabinet Partial Discharge Based on Pulse Current Method

    Science.gov (United States)

    Y Tao, S.; Zhang, X. Z.; Cai, H. W.; Li, P.; Feng, Y.; Zhang, T. C.; Li, J.; Wang, W. S.; Zhang, X. K.

    2017-12-01

    The pulse current method for partial discharge detection is generally applied in type testing and other off-line tests of electrical equipment at delivery. After intensive analysis of the present situation and existing problems of partial discharge detection in switch cabinets, this paper designed the circuit principle and signal extraction method for partial discharge on-line detection based on a high-voltage presence indicating systems (VPIS), established a high voltage switch cabinet partial discharge on-line detection circuit based on the pulse current method, developed background software integrated with real-time monitoring, judging and analyzing functions, carried out a real discharge simulation test on a real-type partial discharge defect simulation platform of a 10KV switch cabinet, and verified the sensitivity and validity of the high-voltage switch cabinet partial discharge on-line monitoring device based on the pulse current method. The study presented in this paper is of great significance for switch cabinet maintenance and theoretical study on pulse current method on-line detection, and has provided a good implementation method for partial discharge on-line monitoring devices for 10KV distribution network equipment.

  13. Thin film electroluminescent cells on the basis of Ce-doped CaGa2S4 and SrGa2S4 prepared by flash evaporation method

    International Nuclear Information System (INIS)

    Gambarov, E.; Bayramov, A.; Kato, A.; Iida, S.

    2006-01-01

    Ce-doped CaGa 2 S 4 and SrGa 2 S 4 thin film electroluminescent (TFEL) devices were prepared for the first time on the basis of films deposited by flash evaporation method. Significant crystallization, stoichiometry improvement of the films and increase of photoluminescence intensity were found after annealing in H 2 S and O 2 gas stream. EL spectra of the cells exhibited the characteristic double-band emission similar to that seen for Ce 3+ activated CaGa 2 S 4 and SrGa 2 S 4 films under photon excitation. Applied voltage and frequency dependences of the electroluminescence were studied. Low voltage operation as low as 20 V was observed for these cells. Luminance of about 4 cd/m 2 at 100 V operating voltage with 2.5 kHz frequency was achieved for the TFEL cell with films annealed in O 2 gas stream. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Transient electroluminescence on pristine and degraded phosphorescent blue OLEDs

    Science.gov (United States)

    Niu, Quan; Blom, Paul W. M.; May, Falk; Heimel, Paul; Zhang, Minlu; Eickhoff, Christian; Heinemeyer, Ute; Lennartz, Christian; Crǎciun, N. Irina

    2017-11-01

    In state-of-the-art blue phosphorescent organic light-emitting diode (PHOLED) device architectures, electrons and holes are injected into the emissive layer, where they are carried by the emitting and hole transporting units, respectively. Using transient electroluminescence measurements, we disentangle the contribution of the electrons and holes on the transport and efficiency of both pristine and degraded PHOLEDs. By varying the concentration of hole transporting units, we show that for pristine PHOLEDs, the transport is electron dominated. Furthermore, degradation of the PHOLEDs upon electrical aging is not related to the hole transport but is governed by a decrease in the electron transport due to the formation of electron traps.

  15. Dye linked conjugated homopolymers: using conjugated polymer electroluminescence to optically pump porphyrin-dye emission

    DEFF Research Database (Denmark)

    Nielsen, K.T.; Spanggaard, H.; Krebs, Frederik C

    2004-01-01

    . Electroluminescent devices of the homopolymer itself and of the zinc-porphyrin containing polymer were prepared and the nature of the electroluminescence was characterized. The homopolymer segments were found to optically pump the emission of the zinc-porphyrin dye moities. The homopolymer exhibits blue......Zinc-porphyrin dye molecules were incorporated into the backbone of a conjugated polymer material by a method, which allowed for the incorporation of only one zinc-porphyrin dye molecule into the backbone of each conjugated polymer molecule. The electronic properties of the homopolymer were...

  16. High Input Voltage Discharge Supply for High Power Hall Thrusters Using Silicon Carbide Devices

    Science.gov (United States)

    Pinero, Luis R.; Scheidegger, Robert J.; Aulsio, Michael V.; Birchenough, Arthur G.

    2014-01-01

    A power processing unit for a 15 kW Hall thruster is under development at NASA Glenn Research Center. The unit produces up to 400 VDC with two parallel 7.5 kW discharge modules that operate from a 300 VDC nominal input voltage. Silicon carbide MOSFETs and diodes were used in this design because they were the best choice to handle the high voltage stress while delivering high efficiency and low specific mass. Efficiencies in excess of 97 percent were demonstrated during integration testing with the NASA-300M 20 kW Hall thruster. Electromagnet, cathode keeper, and heater supplies were also developed and will be integrated with the discharge supply into a vacuum-rated brassboard power processing unit with full flight functionality. This design could be evolved into a flight unit for future missions that requires high power electric propulsion.

  17. Induction motor voltage flicker analysis and its mitigation measures using custom power devices: A case study

    OpenAIRE

    SANJAY. A. DEOKAR,; Dr. L. M. WAGHMARE

    2010-01-01

    This paper suggests methods for estimating short time flicker (PST) severity on 22/3.3 kV network supplying induction motor loads of municipal integrated water pumping system. The impact of additional connection of induction motors to the same system has been analyzed. Measurements are done at the point of common coupling (PCC) to identify background short time flicker levels and the contribution of the already operating induction motors. The paper also analyses and compares different voltage...

  18. Power grid current harmonics mitigation drawn on low voltage rated switching devices with effortless control

    Energy Technology Data Exchange (ETDEWEB)

    Marques, Hugo S.; Anunciada, Victor; Borges, Beatriz V. [Power Electronics Group, Instituto de Telecomunicacoes, Lisbon (Portugal); Instituto Superior Tecnico - Universidade Tecnica de Lisboa, Lisbon (Portugal)

    2010-01-15

    The great majority of the existing hybrid active power filter solutions is normally focused in 3{phi} systems and, in general, concentrates its domain of application in specific loads with deterministic behavior. Because common use grids do not exhibit these characteristics, it is mandatory to develop solutions for more generic scenarios, encouraging the use of less classical hybrid solutions. In fact, due to the widely use of switch mode converters in a great variety of consumer electronics, the problematic of mains current harmonic mitigation is no longer an exclusive matter of 3{phi} systems. The contribution of this paper is to present a shunt hybrid active power filter topology, initially conceived to work in 1{phi} domestic grids, able to operate the inverter at a voltage rate that can be lower than 10% of the mains voltage magnitude, even under nonspecific working conditions. In addition, the results shown in this paper demonstrate that this topology can, without lack of generality, be suitable to medium voltage (1{phi} or 3{phi}) systems. A new control approach for the proposed topology is discussed in this paper. The control method exhibits an extremely simple architecture requiring single point current sensing only, with no need for any kind of reference. Its practical implementation can be fulfilled by using very few, common use, operational amplifiers. The principle of operation, design criteria, simulation predictions and experimental results are presented and discussed. (author)

  19. Novel Mechano-Luminescent Sensors Based on Piezoelectric/Electroluminescent Composites

    Directory of Open Access Journals (Sweden)

    Yunzhang Fang

    2011-04-01

    Full Text Available A high-sensitivity mechano-luminescent sensor was fabricated on the basis of piezoelectric/electroluminescent composites. The working principle of this mechano-luminescent sensor was elucidated by analyzing the relationship between the piezoelectric-induced charges and the electroluminescent effects. When a stress is applied on the piezoelectric layer, electrical charges will be induced at both the top and bottom sides of the piezoelectric layer. The induced electrical charges will lead to a light output from the electroluminescent layer, thus producing a mechano-luminescence effect. By increasing the vibration strength or frequency applied, the mechano-luminescence output can be obviously enhanced. Mechano-luminescence sensors have potential in smart stress-to-light devices, such as foot-stress-distribution-diagnosis systems and dynamic-load-monitors for bridge hanging cables.

  20. Comparison of the electroluminescence of a red fluorescent dye doped into the Alq{sub 3} and Alq{sub 3}:rubrene mixed host

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Hee-Young; Kang, Gi-Wook; Park, Kyung-Min; Yoo, In-Sun; Lee, Changhee

    2004-01-05

    We studied the effect of a mixed host of Alq{sub 3} and rubrene on the energy transfer and charge trapping processes in organic light-emitting devices with a red fluorescent dopant of 4-(dicyanomethylene)-2-tert-butyl-6 (1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB). The temperature dependence of electroluminescence (EL) properties is compared for the device with DCJTB doped into the Alq{sub 3} only host and that with the Alq{sub 3}:rubrene mixed host. The device with the Alq{sub 3}:rubrene mixed host shows an efficient red emission from DCJTB, negligible EL emission from Alq{sub 3}, and a lower EL drive voltage compared to the device with the Alq{sub 3} only host. Upon cooling the device temperature, the EL emission from rubrene increases but the emission from Alq{sub 3} is still weak, and the quantum efficiency (QE) is almost temperature-independent for the device with the Alq{sub 3}:rubrene mixed host. On the contrary, the EL emission from Alq{sub 3} increases and the QE decreases for devices with the Alq{sub 3} only host at low temperature. The results indicate that recombination of injected electrons and holes occurs on rubrene and subsequent energy transfer to DCJTB dominates in the device with the Alq{sub 3}:rubrene mixed host.

  1. The current-voltage characteristic and potential oscillations of a double layer in a triple plasma device

    International Nuclear Information System (INIS)

    Carpenter, R.T.; Torven, S.

    1986-07-01

    The properties of a strong double layer in a current circuit with a capacitance and an inductance are investigated in a triple plasma device. The double layer gives rise to a region of negative differential resistance in the current-voltage characteristic of the device, and this gives non-linear oscillations in the current and the potential drop over the double layer (PhiDL). For a sufficiently large circuit inductance PhiDL reaches an amplitude given by the induced voltage (-LdI/dt) which is much larger than the circuit EMF due to the rapid current decrease when PhiDL increases. A variable potential minimum exists in the plasma on the low potential side of the double layer, and the depth of the minimum increases when PhiDL increases. An increasing fraction of the electrons incident at the double layer are then reflected, and this is found to be the main process giving rise to the negative differential resistance. A qualitative model for the variation of the minimum potential with PhiDL is also proposed. It is based on the condition that the minimum potential must adjust itself self-consistentely so that quasi-neutrality is maintained in the plasma region where the minimum is assumed. (authors)

  2. Liquid crystalline networks for electroluminescent displays

    International Nuclear Information System (INIS)

    Contoret, A.E.A.

    2001-09-01

    This work presents the first low molar mass organic electroluminescent (EL) material to form a nematic glass and then emit plane-polarised light from the vitrified state on application of an electric field. Photocrosslinkable molecules are also discussed which form insoluble films on illumination with ultra-violet light. This approach combines the ease of deposition of small molecules with the robustness and stability of polymers, allowing simple fabrication of multi-layer EL devices and photo-patterning. A range of conjugated low molar-mass molecules are considered, containing the anthracene, perylene and fluorene cores, with the aims of producing a general recipe for efficient EL, based on ordered, stable nematics at room temperature. Many physical properties are compared and molecular mechanics modeling is used to represent molecular geometries. An acrylate and several diene photo-polymerisable derivatives of the fluorenes undergo photo-crosslinking. Infrared and photoluminescence spectroscopy is used to examine crosslinking in detail and to optimise exposure conditions. The diene shows no significant degradation for an optimal exposure, but requires a high fluence of 100 Jcm -2 to form an insoluble film. A doped photo-alignment layer is used for the first time to obtain polarised El with ratio 11:1 and 80 cdm -2 brightness from the crosslinked diene. The insoluble crosslinked network allows spin coating of an electron transporting over-layer, resulting in increased brightness. Complex impedance spectroscopy and time of flight measurements confirm good material properties with complete depletion of the crosslinkable diene molecule and non-dispersive conduction. Finally, a novel deposition technique, pulsed laser deposition (PLD), is presented, as an alternative to spin coating or vapour deposition. Minimal degradation is observed for optimised deposition conditions and a PLD film is successfully demonstrated in an EL device. (author)

  3. Electroluminescence efficiencies of erbium in silicon-based hosts

    Energy Technology Data Exchange (ETDEWEB)

    Cueff, Sébastien, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France); School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Manel Ramírez, Joan; Berencén, Yonder; Garrido, Blas [MIND-IN2UB, Department Electrònica, Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028 (Spain); Kurvits, Jonathan A.; Zia, Rashid [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Department of Physics, Brown University, Providence, Rhode Island 02912 (United States); Rizk, Richard; Labbé, Christophe, E-mail: sebastien-cueff@brown.edu, E-mail: christophe.labbe@ensicaen.fr [Centre de Recherche sur les Ions, les Matériaux et la Photonique (CIMAP), UMR 6252 CNRS/CEA/Ensicaen/UCBN, Caen 14050 (France)

    2013-11-04

    We report on room-temperature 1.5 μm electroluminescence from trivalent erbium (Er{sup 3+}) ions embedded in three different CMOS-compatible silicon-based hosts: SiO{sub 2}, Si{sub 3}N{sub 4}, and SiN{sub x}. We show that although the insertion of either nitrogen or excess silicon helps enhance electrical conduction and reduce the onset voltage for electroluminescence, it drastically decreases the external quantum efficiency of Er{sup 3+} ions from 2% in SiO{sub 2} to 0.001% and 0.0004% in SiN{sub x} and Si{sub 3}N{sub 4}, respectively. Furthermore, we present strong evidence that hot carrier injection is significantly more efficient than defect-assisted conduction for the electrical excitation of Er{sup 3+} ions. These results suggest strategies to optimize the engineering of on-chip electrically excited silicon-based nanophotonic light sources.

  4. Reverse bistable effect in ferroelectric liquid crystal devices with ultra-fast switching at low driving voltage.

    Science.gov (United States)

    Guo, Qi; Zhao, Xiaojin; Zhao, Huijie; Chigrinov, V G

    2015-05-15

    In this Letter, reverse bistable effect with deep-sub-millisecond switching time is first reported in ferroelectric liquid crystal (FLC) devices using a homogeneous photo-alignment technique. It is indicated by our experimental results that both the anchoring energy and the dielectric property of the FLC's alignment layer is critical for the existence of the reverse bistable effect. In addition, with the derived criteria of the reverse bistable effect, we quantitatively analyze the switching dynamics of the reverse bistable FLC and the transition condition between the traditional bistability and our presented reverse bistability. Moreover, the fabricated FLC device exhibits an ultra-fast switching of ∼160  μs and a high contrast ratio of 1000:1, both of which were measured at a low driving voltage of 11 V. The featured deep-sub-millisecond switching time is really advantageous for our presented reverse bistable FLC devices, which enables a significant quality improvement of the existing optical devices, as well as a wide range of new applications in photonics and display areas.

  5. Kinetics of transient electroluminescence in organic light emitting diodes

    International Nuclear Information System (INIS)

    Shukla, Manju; Brahme, Nameeta; Kumar, Pankaj; Chand, Suresh; Kher, R S; Khokhar, M S K

    2008-01-01

    Mathematical simulation on the rise and decay kinetics of transient electroluminescence (EL) in organic light emitting diodes (OLEDs) is presented. The transient EL is studied with respect to a step voltage pulse. While rising, for lower values of time, the EL intensity shows a quadratic dependence on (t - t del ), where t del is the time delay observed in the onset of EL, and finally attains saturation at a sufficiently large time. When the applied voltage is switched off, the initial EL decay shows an exponential dependence on (t - t dec ), where t dec is the time when the voltage is switched off. The simulated results are compared with the transient EL performance of a bilayer OLED based on small molecular bis(2-methyl 8-hydroxyquinoline)(triphenyl siloxy) aluminium (SAlq). Transient EL studies have been carried out at different voltage pulse amplitudes. The simulated results show good agreement with experimental data. Using these simulated results the lifetime of the excitons in SAlq has also been calculated

  6. Optimal sizing and location of SVC devices for improvement of voltage profile in distribution network with dispersed photovoltaic and wind power plants

    International Nuclear Information System (INIS)

    Savić, Aleksandar; Đurišić, Željko

    2014-01-01

    Highlights: • Significant voltage variations in a distribution network with dispersed generation. • The use of SVC devices to improve the voltage profiles are an effective solution. • Number, size and location of SVC devices are optimized using genetic algorithm. • The methodology is presented on an example of a real distribution system in Serbia. - Abstract: Intermittent power generation of wind turbines and photovoltaic plants creates voltage disturbances in power distribution networks which may not be acceptable to the consumers. To control the deviations of the nodal voltages, it is necessary to use fast dynamic control of the reactive power in the distribution network. Implementation of the power electronic devices, such as Static Var Compensator (SVC), enables effective dynamic state as well as a static state of the nodal voltage control in the distribution network. This paper analyzed optimal sizing and location of SVC devices by using genetic algorithm, to improve nodal voltages profile in a distribution network with dispersed photovoltaic and wind power plants. Practical application of the developed methodology was tested on an example of a real distribution network

  7. Electroluminescence of a polythiophene molecular wire suspended between a metallic surface and the tip of a scanning tunneling microscope.

    Science.gov (United States)

    Reecht, Gaël; Scheurer, Fabrice; Speisser, Virginie; Dappe, Yannick J; Mathevet, Fabrice; Schull, Guillaume

    2014-01-31

    The electroluminescence of a polythiophene wire suspended between a metallic surface and the tip of a scanning tunneling microscope is reported. Under positive sample voltage, the spectral and voltage dependencies of the emitted light are consistent with the fluorescence of the wire junction mediated by localized plasmons. This emission is strongly attenuated for the opposite polarity. Both emission mechanism and polarity dependence are similar to what occurs in organic light emitting diodes (OLED) but at the level of a single molecular wire.

  8. An unattended device for high-voltage sampling and passive measurement of thoron decay products

    Energy Technology Data Exchange (ETDEWEB)

    Gierl, Stefanie; Meisenberg, Oliver, E-mail: oliver.meisenberg@helmholtz-muenchen.de; Wielunski, Marek; Tschiersch, Jochen [Helmholtz Zentrum München, German Research Center for Environmental Health, Institute of Radiation Protection, Ingolstädter Landstr. 1, 85764 Neuherberg (Germany); Haninger, Thomas [Helmholtz Zentrum München, German Research Center for Environmental Health, Auswertungsstelle für Strahlendosimeter, Otto-Hahn-Ring 6, 81739 München (Germany)

    2014-02-15

    An integrating measurement device for the concentration of airborne thoron decay products was designed and calibrated. It is suitable for unattended use over up to several months also in inhabited dwellings. The device consists of a hemispheric capacitor with a wire mesh as the outer electrode on ground potential and the sampling substrates as the inner electrode on +7.0 kV. Negatively charged and neutral thoron decay products are accelerated to and deposited on the sampling substrates. As sampling substrates, CR39 solid-state nuclear track detectors are used in order to record the alpha decay of the sampled decay products. Nuclide discrimination is achieved by covering the detectors with aluminum foil of different thickness, which are penetrated only by alpha particles with sufficient energy. Devices of this type were calibrated against working level monitors in a thoron experimental house. The sensitivity was measured as 9.2 tracks per Bq/m{sup 3} × d of thoron decay products. The devices were used over 8 weeks in several houses built of earthen material in southern Germany, where equilibrium equivalent concentrations of 1.4–9.9 Bq/m{sup 3} of thoron decay products were measured.

  9. Python Scripts for Automation of Current-Voltage Testing of Semiconductor Devices (FY17)

    Science.gov (United States)

    2017-01-01

    investment required by the user with manual operation, only a fraction of the total devices fabricated on a sample are actually tested. In this...only moves the stage itself in 3 dimensions. It does not control the probes or stage rotation. It is important to note that the user must first attempt...measurements using the 4155C and the manual probe station. This script bypasses the original front panel operation of the 4155C and allows the user to set

  10. Micro/Nano Fabricated Solid-State Thermoelectric Generator Devices for Integrated High Voltage Power Sources

    Science.gov (United States)

    Fleurial, J.-P.; Ryan, M. A.; Snyder, G. J.; Huang, C.-K.; Whitacre, J. F.; Patel, J.; Lim, J.; Borshchevsky, A.

    2002-01-01

    Deep space missions have a strong need for compact, high power density, reliable and long life electrical power generation and storage under extreme temperature conditions. Except for electrochemical batteries and solar cells, there are currently no available miniaturized power sources. Conventional power generators devices become inefficient in extreme environments (such as encountered in Mars, Venus or outer planet missions) and rechargeable energy storage devices can only be operated in a narrow temperature range thereby limiting mission duration. The planned development of much smaller spacecrafts incorporating a variety of micro/nanodevices and miniature vehicles will require novel, reliable power technologies. It is also expected that such micro power sources could have a wide range of terrestrial applications, in particular when the limited lifetime and environmental limitations of batteries are key factors. Advanced solid-state thermoelectric combined with radioisotope or waste heat sources and low profile energy storage devices are ideally suited for these applications. The Jet Propulsion Laboratory has been actively pursuing the development of thermoelectric micro/nanodevices that can be fabricated using a combination of electrochemical deposition and integrated circuit processing techniques. Some of the technical challenges associated with these micro/nanodevice concepts, their expected level of performance and experimental fabrication and testing results to date are presented and discussed.

  11. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  12. Multicolored, Low-Voltage-Driven, Flexible Organic Electrochromic Devices Based on Oligomers.

    Science.gov (United States)

    Wan, Zhijun; Zeng, Jinming; Li, Hui; Liu, Ping; Deng, Wenji

    2018-04-20

    In this study, a series of organic conjugated oligomers containing 3,4-ethylenedioxythiophene (EDOT) and aromatic groups are synthesized, which are as follows: 2,5-di(methyl benzoate)-3,4-ethylenedioxy-thiophene (1EDOT-2B-COOCH 3 ), 5,5'-di(methyl benzoate)-2,2'-bi(3,4-ethylenedioxythiophene) (2EDOT-2B-COOCH 3 ), 5,5″-di(methyl benzoate)-2,2':5',2″-ter(3,4-ethylenedioxythiophene) (3EDOT-2B-COOCH 3 ), and 5,5″'-di(methyl benzoate)-2,2':5',2″: 5″,2″'-quater(3,4-ethylenedioxythiophene) (4EDOT-2B-COOCH 3 ). Using these oligomers as active materials, flexible organic electrochromic devices are fabricated. The device structure is indium tin oxide-PET plastic slide (ITO-PET)/active layer/conducting gel/ITO-PET, and the electrochromic properties of oligomers are investigated. These oligomers exhibit reversible color changes upon electrochemical doping and dedoping. The highest optical contrast is exhibited by 4EDOT-2B-COOCH 3 , which is 75.2% at 700 nm. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Low-voltage and high-efficiency white organic light emitting devices with carrier balance

    International Nuclear Information System (INIS)

    Wei Fuxiang; Huang, Y.; Fang, L.

    2010-01-01

    White organic light emitting devices with the structure of ITO/m-MTDATA:x%4F-TCNQ/NPB/TBADN:EBDP:DCJTB/Bphen:Liq/LiF/Al have been demonstrated in this paper. High-mobility m-MTDATA:4F-TCNQ is added into the region between ITO and NBP to increase hole injection and transport. The high-mobility Bphen:Liq layer is added into the region between cathode and emission layers to lower cathode barrier and facilitate carrier injection. In the meanwhile, an effective carrier balance (number of holes is equal to number of electrons) between holes and electrons is considered to be one of the most important factors for improving OLEDs. During the experiment, by modulating the doping concentration of 4F-TCNQ, we can control hole injection and transport to make the carriers reach a high-level balance. The maximum current efficiency and power efficiency of devices were 9.3 cd/A and 4.6 lm/A, respectively.

  14. Electroluminescence Spectrum Shift with Switching Behaviour of Diamond Thin Films

    Institute of Scientific and Technical Information of China (English)

    王小平; 王丽军; 张启仁; 姚宁; 张兵临

    2003-01-01

    We report a special phenomenon on switching behaviour and the electroluminescence (EL) spectrum shift of doped diamond thin films. Nitrogen and cerium doped diamond thin films were deposited on a silicon substrate by microwave plasma-assisted chemical vapour deposition system and other special techniques. An EL device with a three-layer structure of nitrogen doped diamond/cerium doped diamond/SiO2 thin films was made. The EL device was driven by a direct-current power supply. Its EL character has been investigated, and a switching behaviour was observed. The EL light emission colour of diamond films changes from yellow (590nm) to blue (454 nm) while the switching behaviour appears.

  15. Carbon-electroluminescence: An organic approach to lighting

    Science.gov (United States)

    Kumari, Sonali; Chaudhary, Tarun; Chandran, Vivek; Lokeshwari, M.; Shastry, K.

    2018-05-01

    Over the recent years, quantum dots have garnered massive following and peaked in interest among the scientific community due to their versatility, exotic properties, ease of preparation and low cost. As the demand for faster, reliable and energy efficient electronic devices intensifies, extra emphasis is laid on the development of smart materials capable of satiating this need. Electroluminescent organic quantum dots have emerged as one of the prime contenders in addressing the ecological, economic and technological constraints. Application of such luminescent nanoparticles as fluorescent light converters in LEDs is touted as one of the reliable and easiest avenues in realizing and developing newer energy efficient technologies for the next millennia. One promising candidate is zig-zag graphene quantum dots, which exhibits high electro-luminescence due to a phenomenon known as quantum confinement (where size of the nano-particle is of the same order or less than that of Bohr exciton radius). In this paper, we aim to provide a review of past and present research in the synthesis and development of luminescence using organic quantum dots.

  16. Optimization Design of an Inductive Energy Harvesting Device for Wireless Power Supply System Overhead High-Voltage Power Lines

    Directory of Open Access Journals (Sweden)

    Wei Wang

    2016-03-01

    Full Text Available Overhead high voltage power line (HVPL online monitoring equipment is playing an increasingly important role in smart grids, but the power supply is an obstacle to such systems’ stable and safe operation, so in this work a hybrid wireless power supply system, integrated with inductive energy harvesting and wireless power transmitting, is proposed. The energy harvesting device extracts energy from the HVPL and transfers that from the power line to monitoring equipment on transmission towers by transmitting and receiving coils, which are in a magnetically coupled resonant configuration. In this paper, the optimization design of online energy harvesting devices is analyzed emphatically by taking both HVPL insulation distance and wireless power supply efficiency into account. It is found that essential parameters contributing to more extracted energy include large core inner radius, core radial thickness, core height and small core gap within the threshold constraints. In addition, there is an optimal secondary coil turn that can maximize extracted energy when other parameters remain fixed. A simple and flexible control strategy is then introduced to limit power fluctuations caused by current variations. The optimization methods are finally verified experimentally.

  17. Analytical model for the photocurrent-voltage characteristics of bilayer MEH-PPV/TiO2 photovoltaic devices

    Directory of Open Access Journals (Sweden)

    Chen Chong

    2011-01-01

    Full Text Available Abstract The photocurrent in bilayer polymer photovoltaic cells is dominated by the exciton dissociation efficiency at donor/acceptor interface. An analytical model is developed for the photocurrent-voltage characteristics of the bilayer polymer/TiO2 photovoltaic cells. The model gives an analytical expression for the exciton dissociation efficiency at the interface, and explains the dependence of the photocurrent of the devices on the internal electric field, the polymer and TiO2 layer thicknesses. Bilayer polymer/TiO2 cells consisting of poly[2-methoxy-5-(2-ethylhexyloxy-1,4-phenylenevinylene] (MEH-PPV and TiO2, with different thicknesses of the polymer and TiO2 films, were prepared for experimental purposes. The experimental results for the prepared bilayer MEH-PPV/TiO2 cells under different conditions are satisfactorily fitted to the model. Results show that increasing TiO2 or the polymer layer in thickness will reduce the exciton dissociation efficiency in the device and further the photocurrent. It is found that the photocurrent is determined by the competition between the exciton dissociation and charge recombination at the donor/acceptor interface, and the increase in photocurrent under a higher incident light intensity is due to the increased exciton density rather than the increase in the exciton dissociation efficiency.

  18. Quantitative Prediction of Power Loss for Damaged Photovoltaic Modules Using Electroluminescence

    Directory of Open Access Journals (Sweden)

    Timo Kropp

    2018-05-01

    Full Text Available Electroluminescence (EL is a powerful tool for the qualitative mapping of the electronic properties of solar modules, where electronic and electrical defects are easily detected. However, a direct quantitative prediction of electrical module performance purely based on electroluminescence images has yet to be accomplished. Our novel approach, called “EL power prediction of modules” (ELMO as presented here, used just two electroluminescence images to predict the electrical loss of mechanically damaged modules when compared to their original (data sheet power. First, using this method, two EL images taken at different excitation currents were converted into locally resolved (relative series resistance images. From the known, total applied voltage to the module, we were then able to calculate absolute series resistance values and the real distribution of voltages and currents. Then, we reconstructed the complete current/voltage curve of the damaged module. We experimentally validated and confirmed the simulation model via the characterization of a commercially available photovoltaic module containing 60 multicrystalline silicon cells, which were mechanically damaged by hail. Deviation between the directly measured and predicted current/voltage curve was less than 4.3% at the maximum power point. For multiple modules of the same type, the level of error dropped below 1% by calibrating the simulation. We approximated the ideality factor from a module with a known current/voltage curve and then expand the application to modules of the same type. In addition to yielding series resistance mapping, our new ELMO method was also capable of yielding parallel resistance mapping. We analyzed the electrical properties of a commercially available module, containing 72 monocrystalline high-efficiency back contact solar cells, which suffered from potential induced degradation. For this module, we predicted electrical performance with an accuracy of better

  19. An LOD with improved breakdown voltage in full-frame CCD devices

    Science.gov (United States)

    Banghart, Edmund K.; Stevens, Eric G.; Doan, Hung Q.; Shepherd, John P.; Meisenzahl, Eric J.

    2005-02-01

    In full-frame image sensors, lateral overflow drain (LOD) structures are typically formed along the vertical CCD shift registers to provide a means for preventing charge blooming in the imager pixels. In a conventional LOD structure, the n-type LOD implant is made through the thin gate dielectric stack in the device active area and adjacent to the thick field oxidation that isolates the vertical CCD columns of the imager. In this paper, a novel LOD structure is described in which the n-type LOD impurities are placed directly under the field oxidation and are, therefore, electrically isolated from the gate electrodes. By reducing the electrical fields that cause breakdown at the silicon surface, this new structure permits a larger amount of n-type impurities to be implanted for the purpose of increasing the LOD conductivity. As a consequence of the improved conductance, the LOD width can be significantly reduced, enabling the design of higher resolution imaging arrays without sacrificing charge capacity in the pixels. Numerical simulations with MEDICI of the LOD leakage current are presented that identify the breakdown mechanism, while three-dimensional solutions to Poisson's equation are used to determine the charge capacity as a function of pixel dimension.

  20. Double peak spectra in spontaneous edge electroluminescence

    Czech Academy of Sciences Publication Activity Database

    Zavadil, Jiří; Žďánský, Karel

    1993-01-01

    Roč. 36, č. 11 (1993), s. 1623-1632 ISSN 0038-1101 R&D Projects: GA AV ČR IAA167108 Keywords : light emitting diodes * electroluminescence * optical waveguide theory Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.871, year: 1993

  1. Electroluminescence and rectifying properties of heterojunction LEDs based on ZnO nanorods

    International Nuclear Information System (INIS)

    Rout, Chandra Sekhar; Rao, C N R

    2008-01-01

    n-ZnO NR/p-Si and n-ZnO NR/p-PEDOT/PSS heterojunction light-emitting diodes (LEDs) have been fabricated with ZnO nanorods (NRs) grown by a low-temperature method as well as by employing pulsed laser deposition (PLD). The low-temperature method involves growing the ZnO nanorods by the reaction of water with zinc metal. The current-voltage (I-V) characteristics of the heterojunctions show good rectifying diode characteristics. The electroluminescence (EL) spectra of the nanorods show an emission band at around 390 nm and defect related bands in the 400-550 nm region. Room-temperature electroluminescence is detected under forward bias for both the heterostructures. With the low-temperature grown nanorods, the defect related bands in the 400-550 nm range are more intense in the EL spectra, whereas with the PLD grown nanorods, only the 390 nm band is prominent

  2. Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Tondini, S. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy); Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, Via Campi 213/a, 41125 Modena (Italy); Pucker, G. [Advanced Photonics and Photovoltaics Group, Bruno Kessler Foundation, Via Sommarive 18, 38123 Trento (Italy); Pavesi, L. [Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, 38123 Trento (Italy)

    2016-09-07

    The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minority carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.

  3. AC Electroluminescent Processes in Pr3+-Activated (Ba0.4Ca0.6TiO3 Diphase Polycrystals

    Directory of Open Access Journals (Sweden)

    Nan Gao

    2017-05-01

    Full Text Available We investigated the properties of alternating current (AC-driven electroluminescence from (Ba0.4Ca0.6TiO3:Pr3+ diphase polycrystal-based device. The results of crystal phases and micrographs, and the symmetrical dual emissions in one AC cycle, indicate the spontaneous formation of a dielectric/phosphor/dielectric sandwich microstructure in (Ba0.4Ca0.6TiO3:Pr3+. The electroluminescent device emits a red light of 617 nm, which is attributed to the 1D2-3H4 transition of Pr3+ in the phosphor phase. At a fixed AC frequency, the intensity of electroluminescence exhibits a steep enhancement when applying an increased driving electric field that is beyond a threshold. In a fixed driving electric field, the intensity of electroluminescence shows a rapid rise at low frequencies, but reaches saturation at high frequencies. Based on a double-injection model, we discussed systematically the electroluminescent processes in a whole cycle of AC electric field, which matched well with the experimental data. Our investigation is expected to expand our understanding of such a diphase electroluminescent device, thereby promoting their applications in lighting and displays.

  4. An Annotated Bibliography of High-Voltage Direct-Current Transmission and Flexible AC Transmission (FACTS) Devices, 1991-1993.

    Energy Technology Data Exchange (ETDEWEB)

    Litzenberger, Wayne; Lava, Val

    1994-08-01

    References are contained for HVDC systems, converter stations and components, overhead transmission lines, cable transmission, system design and operations, simulation of high voltage direct current systems, high-voltage direct current installations, and flexible AC transmission system (FACTS).

  5. Annealing-temperature-dependent voltage-sign reversal in all-oxide spin Seebeck devices using RuO2

    Science.gov (United States)

    Kirihara, Akihiro; Ishida, Masahiko; Yuge, Ryota; Ihara, Kazuki; Iwasaki, Yuma; Sawada, Ryohto; Someya, Hiroko; Iguchi, Ryo; Uchida, Ken-ichi; Saitoh, Eiji; Yorozu, Shinichi

    2018-04-01

    Thermoelectric converters based on the spin Seebeck effect (SSE) have attracted great attention due to their potential to offer novel applications such as energy harvesting and heat-flow sensing. For converting a SSE-induced spin current into an electric current, a transition metal film such as Pt, which exhibits large inverse spin-Hall effect (ISHE), has been typically used. In this work, we show an all-oxide SSE device using ruthenium oxide (RuO2) as a conductive film. We found that both the sign and magnitude of the SSE-induced ISHE voltage V appearing in the RuO2 film changes depending on the post annealing temperature, and that the magnitude can become larger than that of a standard SSE device using Pt. The similar sign change was also observed in Hall-resistance measurements of the RuO2 films. X-ray absorption fine structure (XAFS) spectra of as-deposited and annealed RuO2 revealed that the annealing process substantially improved the long-range crystalline order in RuO2. This suggests that change in the crystalline order may modify the dominant ISHE mechanism or electronic states in RuO2, leading to the sign reversal of V as well as the Hall coefficient. Our result demonstrates that RuO2 is an interesting material not only as a practical ISHE film but also as a testbed to study physics of spin-to-charge converters that depend on their crystalline order.

  6. Investigation of disorder and its effect on electrical transport in electrochemically doped polymer devices by current-voltage and impedance spectroscopy

    Science.gov (United States)

    Rahman Khan, Motiur; Anjaneyulu, P.; Koteswara Rao, K. S. R.; Menon, R.

    2017-03-01

    We report on the analysis of temperature-dependent current-voltage characteristics and impedance measurements of electrochemically doped poly(3-methylthiophene) devices at different doping levels. The extent of doping is carefully tailored such that only the bulk-limited transport mechanism prevails. A transition from exponentially distributed trap-limited transport to trap-free space-charge-limited current is observed in current-voltage conduction upon increasing the doping. The obtained trap densities (3.2  ×  1016 cm-3 and 8.6  ×  1015 cm-3) and trap energies (31.7 meV and 16.6 meV) for different devices signify the variation in disorder with doping, which is later supported by impedance measurements. Impedance-frequency data for various devices can not be explained using the parallel resistance-capacitance (RC) model in the equivalent circuit. However, this was established by incorporating a constant phase element Q (CPE) instead of the capacitance parameter. It should be emphasized that low doping devices in particular are best simulated with two CPE elements, while the data related to other devices are fitted well with a single CPE element. It is also observed from evaluated circuit parameters that the spatial inhomogeneity and disorder are the cause of variability in different samples, which has an excellent correlation with the temperature-dependent current-voltage characteristics.

  7. Investigation of disorder and its effect on electrical transport in electrochemically doped polymer devices by current–voltage and impedance spectroscopy

    International Nuclear Information System (INIS)

    Khan, Motiur Rahman; Koteswara Rao, K S R; Menon, R; Anjaneyulu, P

    2017-01-01

    We report on the analysis of temperature-dependent current–voltage characteristics and impedance measurements of electrochemically doped poly(3-methylthiophene) devices at different doping levels. The extent of doping is carefully tailored such that only the bulk-limited transport mechanism prevails. A transition from exponentially distributed trap-limited transport to trap-free space-charge-limited current is observed in current–voltage conduction upon increasing the doping. The obtained trap densities (3.2  ×  10 16 cm −3 and 8.6  ×  10 15 cm −3 ) and trap energies (31.7 meV and 16.6 meV) for different devices signify the variation in disorder with doping, which is later supported by impedance measurements. Impedance–frequency data for various devices can not be explained using the parallel resistance–capacitance ( RC ) model in the equivalent circuit. However, this was established by incorporating a constant phase element Q (CPE) instead of the capacitance parameter. It should be emphasized that low doping devices in particular are best simulated with two CPE elements, while the data related to other devices are fitted well with a single CPE element. It is also observed from evaluated circuit parameters that the spatial inhomogeneity and disorder are the cause of variability in different samples, which has an excellent correlation with the temperature-dependent current–voltage characteristics. (paper)

  8. Molecular structure, photoluminescent and electroluminescent properties of bis(2-(4-methyl-2-hydroxyphenyl)benzothiazolate) zinc with excellent electron-transport characteristics

    International Nuclear Information System (INIS)

    Xu Huixia; Xu Bingshe; Fang Xiaohong; Yue Yan; Chen Liuqing; Wang Hua; Hao Yuying

    2011-01-01

    Highlights: → The synthesis, crystal structure and photophysical properties of Zn(4-MeBTZ) 2 were reported. → The electron-transport property was investigated by theoretical calculations and experimental. → We found that Zn(4-MeBTZ) 2 has a higher electron mobility than that of [Zn(BTZ) 2 ] 2 and the devices based on it have a lower turn-on voltage. - Abstract: In this article, the molecular structure, photoluminescent and electroluminescent properties of bis(2-(4-methyl-2-hydroxyphenyl) benzothiazolate) zinc (Zn(4-MeBTZ) 2 ) with good electron-transport characteristics were reported. This complex was identified as triclinic structure with the strong intermolecular π-π stacking interactions between the benzothiazolate/phenoxido rings and weak intramolecular hydrogen bonds by X-ray single-crystal diffraction. Quantum chemical method has been employed to investigate electron structure and charge transport property. The blue-green light emission was observed by fabricating double-layer devices using Zn(4-MeBTZ) 2 as electron-transport and NPB as hole-transport material. The performance of organic light-emitting devices based on Zn(4-MeBTZ) 2 is much better than that of the devices based on [Zn(BTZ) 2 ] 2 .

  9. Enhanced quantum efficiency in blue-emitting polymer/dielectric nanolayer nanocomposite light-emitting devices

    International Nuclear Information System (INIS)

    Park, Jong Hyeok; Lim, Yong Taik; Park, O Ok; Yu, Jae-Woong; Kim, Jai Kyeong; Kim, Young Chul

    2004-01-01

    Light-emitting devices based on environmentally stable, blue-emitting polymer/dielectric nanolayer nanocomposites were fabricated by blending poly(di-octylfluorene) (PDOF) with organo-clay. By reducing the excimer formation that leads to long wavelength tails, the photoluminescence (PL) and electroluminescence (EL) color purity of the device was enhanced. When a conjugated polymer/dielectric nanolayer nanocomposite is applied to an EL device, we expect an electronic structure similar to the well-known quantum well in small nanodomains. The ratio of PDOF/organo-clay was regulated from 2:1 to 0.5:1 (w/w). The light-emitting device of 0.5:1 (w/w) blend demonstrated the highest quantum efficiency (QE), 0.72% (ph/el), which is ∼500 times higher value compared with that of the pure PDOF layer device. However, the driving voltage of the nanocomposite devices tended to increase with increasing organo-clay content

  10. Controlling charge injection in organic electronic devices using self-assembled monolayers

    Science.gov (United States)

    Campbell, I. H.; Kress, J. D.; Martin, R. L.; Smith, D. L.; Barashkov, N. N.; Ferraris, J. P.

    1997-12-01

    We demonstrate control and improvement of charge injection in organic electronic devices by utilizing self-assembled monolayers (SAMs) to manipulate the Schottky energy barrier between a metal electrode and the organic electronic material. Hole injection from Cu electrodes into the electroluminescent conjugated polymer poly[2-methoxy,5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] was varied by using two conjugated-thiol based SAMs. The chemically modified electrodes were incorporated in organic diode structures and changes in the metal/polymer Schottky energy barriers and current-voltage characteristics were measured. Decreasing (increasing) the Schottky energy barrier improves (degrades) charge injection into the polymer.

  11. Electroluminescence spectra of an STM-tip-induced quantum dot

    NARCIS (Netherlands)

    Croitoru, M.D.; Gladilin, V.N.; Fomin, V.; Devreese, J.T.; Kemerink, M.; Koenraad, P.M.; Sauthoff, K.; Wolter, J.H.; Long, A.R.; Davies, J.H.

    2003-01-01

    We analyse the electroluminescence measurements performed on a STM-tipImduced quantum dot in a GaAs layer. Positions of electroluminescence peaks, attributed to the electron-hole recombination in the quantum dot, are very sensitive to the electron tunnelling current even in the case when the current

  12. Influence of surface wettability on cathode electroluminescence of porous silicon

    International Nuclear Information System (INIS)

    Goryachev, D.N.; Sreseli, O.M.; Belyakov, L.V.

    1997-01-01

    Influence of porous silicon wettability on efficiency of its cathode electroluminescence in electrolytes was investigated. It was revealed that increase of porous silicon wettability by electrolyte improved contact with a sublayer and provided generation of sufficient quantity of charge carriers. Diffusion - ionic, not electronic mechanism of charge transfer to the centers of micro crystallite electroluminescence is observed in porous silicon - electrolyte systems

  13. New electroluminescent carbazole-containing conjugated polymer: synthesis, photophysics, and electroluminescence

    Czech Academy of Sciences Publication Activity Database

    Cimrová, Věra; Ulbricht, C.; Dzhabarov, Vagif; Výprachtický, Drahomír; Egbe, D. A. M.

    2014-01-01

    Roč. 55, č. 24 (2014), s. 6220-6226 ISSN 0032-3861 R&D Projects: GA ČR GAP106/12/0827; GA ČR(CZ) GA13-26542S Institutional support: RVO:61389013 Keywords : carbazole-containing conjugated polymer * synthesis * photophysics and electroluminescence Subject RIV: CD - Macromolecular Chemistry Impact factor: 3.562, year: 2014

  14. Voltage stability analysis considering the load dynamic characteristics and the voltage control devices; Analisis de estabilidad de voltaje considerando las caracteristicas dinamicas de la carga y dispositivos de control de voltaje

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez Alvarez, Enrique

    2001-09-15

    The research work presented in this thesis, is centered in the voltage stability analysis of medium term considering the effect of the load characteristics and its interaction with the voltage control device models in the transmission network. More concretely, a type of load model is defined and studied with desirable characteristics for the study of the voltage stability, the generic load models derived from field tests and from the application of identification techniques and it is analyzed the influence of the application of control systems to improve the system stability margins. Also, alternatives to the power system modeling for the voltage stability study in complex systems are reviewed. In the first place a fundamental analysis of the voltage characteristics and stability in a simplified power system is presented and the method of adopted analysis is introduced. It is shown that the instability phenomenon is manifested as a singular type bifurcation induced from the critical way of voltage when the system is operated under stress conditions. Next, the contribution of the action of the control devices to the stability margin is analyzed and criteria of the stability analyses are deducted based on the study of such mode. Following a linear model of the power system with desirable characteristics for the study of the voltage stability of medium term is proposed and the characteristics of stability in the context of the study of complex systems are interpreted. The proposed analysis tool is based on the physical notion that the behavior of the voltage control systems in the generators is very rapid with regard to the behavior of the load and has its main application in the preliminary study of the voltage stability of medium and long term. From this model, an analytical tool based on the application of techniques of linear analysis is proposed to approach the problem of determination of critical voltage areas and the contribution of control devices to the

  15. Direct Probing of Carrier Behavior in Electroluminescence Indium-Zinc-Oxide/N,N '-Di-[(1-naphthyl)-N,N '-diphenyl]-(1,1'-biphenyl)-4,4'-diamine/Tris(8-hydroxy-quinolinato)aluminum(III)/LiF/Al Diode by Time-Resolved Optical Second-Harmonic Generation

    Science.gov (United States)

    Taguchi, Dai; Zhang, Le; Li, Jun; Weis, Martin; Manaka, Takaaki; Iwamoto, Mitsumasa

    2011-04-01

    By using electric-field-induced second-harmonic generation (EFISHG) measurement, we probed charging and discharging in an α-NPD/Alq3 organic light-emitting diode [α-NPD, N,N '-di-[(1-naphthyl)-N,N '-diphenyl]-(1,1'-biphenyl)-4,4'-diamine; Alq3, tris(8-hydroxy-quinolinato)aluminum(III)] while electroluminescence response was monitored. The EFISHG measurement showed that excessive positive charges accumulated at the α-NPD/Alq3 interface in the charging process, accompanying electroluminescence (EL) radiation, and the accumulated excess positive charges disappeared in the discharging process before the EL decayed. Note that the EL radiation was smooth and strong under the high voltage application, while the EL decayed in a similar way. The Maxwell-Wagner model analysis showed no-dependence of the accumulated excessive positive charge on the applied external voltage, suggesting that electrons and holes injected from the opposite electrodes for EL radiation balanced at the interface. The EFISHG measurement will be useful as a direct way to probe carrier behaviors in organic EL devices.

  16. Study of protection devices against the effects of electric discharges inside a very high voltage generator: the Vivitron accelerator

    International Nuclear Information System (INIS)

    Nolot, E.

    1996-01-01

    The Vivitron tandem is a large electrostatic accelerator comprising a Van de Graaff generator designed to reach terminal voltages of around 30 MV. The machine is limited at rather lower nominal voltages (about 20 MV) due to the sensitivity of the insulating column structure to transient overvoltages. These are induced by electrical discharges in compressed SF 6 . This thesis first aims at analysing the fundamental reasons of electrical discharges in order to limit the probability of their occurrence. Then we simulate the transient overvoltages induced and present some improvements which may lead to a stable behaviour of the Vivitron at nominal voltages higher than 20 MV. Initially we deduce discharge onset voltages and actual breakdown field limitations in the different gap geometries from analysis of possible breakdown mechanisms in compressed SF 6 . In a second part, some electrical characteristics of the insulating column structure are measured at high voltage. Fast rising oscillating waves induced by sparking in the Vivitron, along with the associated energies,are determined in the third part. The last part deals with new surge protections of the insulating column structure. Spark gaps with precise onset voltage and optimized shielding electrodes are discussed. ZnO-based varistors designed for operation at very high fields have also been developed in order to reduce transient overvoltage values. (author)

  17. Symmetry-Breaking Charge Transfer in a Zinc Chlorodipyrrin Acceptor for High Open Circuit Voltage Organic Photovoltaics

    KAUST Repository

    Bartynski, Andrew N.

    2015-04-29

    © 2015 American Chemical Society. Low open-circuit voltages significantly limit the power conversion efficiency of organic photovoltaic devices. Typical strategies to enhance the open-circuit voltage involve tuning the HOMO and LUMO positions of the donor (D) and acceptor (A), respectively, to increase the interfacial energy gap or to tailor the donor or acceptor structure at the D/A interface. Here, we present an alternative approach to improve the open-circuit voltage through the use of a zinc chlorodipyrrin, ZCl [bis(dodecachloro-5-mesityldipyrrinato)zinc], as an acceptor, which undergoes symmetry-breaking charge transfer (CT) at the donor/acceptor interface. DBP/ZCl cells exhibit open-circuit voltages of 1.33 V compared to 0.88 V for analogous tetraphenyldibenzoperyflanthrene (DBP)/C60-based devices. Charge transfer state energies measured by Fourier-transform photocurrent spectroscopy and electroluminescence show that C60 forms a CT state of 1.45 ± 0.05 eV in a DBP/C60-based organic photovoltaic device, while ZCl as acceptor gives a CT state energy of 1.70 ± 0.05 eV in the corresponding device structure. In the ZCl device this results in an energetic loss between ECT and qVOC of 0.37 eV, substantially less than the 0.6 eV typically observed for organic systems and equal to the recombination losses seen in high-efficiency Si and GaAs devices. The substantial increase in open-circuit voltage and reduction in recombination losses for devices utilizing ZCl demonstrate the great promise of symmetry-breaking charge transfer in organic photovoltaic devices.

  18. A novel MR-compatible sensor to assess active medical device safety: stimulation monitoring, rectified radio frequency pulses, and gradient-induced voltage measurements.

    Science.gov (United States)

    Barbier, Thérèse; Aissani, Sarra; Weber, Nicolas; Pasquier, Cédric; Felblinger, Jacques

    2018-03-30

    To evaluate the function of an active implantable medical device (AIMD) during magnetic resonance imaging (MRI) scans. The induced voltages caused by the switching of magnetic field gradients and rectified radio frequency (RF) pulse were measured, along with the AIMD stimulations. An MRI-compatible voltage probe with a bandwidth of 0-40 kHz was designed. Measurements were carried out both on the bench with an overvoltage protection circuit commonly used for AIMD and with a pacemaker during MRI scans on a 1.5 T (64 MHz) MR scanner. The sensor exhibits a measurement range of ± 15 V with an amplitude resolution of 7 mV and a temporal resolution of 10 µs. Rectification was measured on the bench with the overvoltage protection circuit. Linear proportionality was confirmed between the induced voltage and the magnetic field gradient slew rate. The pacemaker pacing was recorded successfully during MRI scans. The characteristics of this low-frequency voltage probe allow its use with extreme RF transmission power and magnetic field gradient positioning for MR safety test of AIMD during MRI scans.

  19. Exciplex electroluminescence and photoluminescence spectra of the new organic materials based on zinc complexes of sulphanylamino-substituted ligands.

    Science.gov (United States)

    Kaplunov, Mikhail G; Krasnikova, Svetlana S; Nikitenko, Sergey L; Sermakasheva, Natalia L; Yakushchenko, Igor K

    2012-04-03

    We have investigated the electroluminescence spectra of the electroluminescent devices based on the new zinc complexes of amino-substituted benzothiazoles and quinolines containing the C-N-M-N chains in their chelate cycles. The spectra exhibit strong exciplex bands in the green to yellow region 540 to 590 nm due to interaction of the excited states of zinc complexes and triaryl molecules of the hole-transporting layer. For some devices, the intrinsic luminescence band of 460 nm in the blue region is also observed along with the exciplex band giving rise to an almost white color of the device emission. The exciplex band can be eliminated if the material of the hole-transporting layer is not a triarylamine derivative. We have also found the exciplex emission in the photoluminescence spectra of the films containing blends of zinc complex and triphenylamine material.

  20. Origin of Reduced Open-Circuit Voltage in Highly Efficient Small-Molecule-Based Solar Cells upon Solvent Vapor Annealing.

    Science.gov (United States)

    Deng, Wanyuan; Gao, Ke; Yan, Jun; Liang, Quanbin; Xie, Yuan; He, Zhicai; Wu, Hongbin; Peng, Xiaobin; Cao, Yong

    2018-03-07

    In this study, we demonstrate that remarkably reduced open-circuit voltage in highly efficient organic solar cells (OSCs) from a blend of phenyl-C 61 -butyric acid methyl ester and a recently developed conjugated small molecule (DPPEZnP-THD) upon solvent vapor annealing (SVA) is due to two independent sources: increased radiative recombination and increased nonradiative recombination. Through the measurements of electroluminescence due to the emission of the charge-transfer state and photovoltaic external quantum efficiency measurement, we can quantify that the open-circuit voltage losses in a device with SVA due to the radiative recombination and nonradiative recombination are 0.23 and 0.31 V, respectively, which are 0.04 and 0.07 V higher than those of the as-cast device. Despite of the reduced open-circuit voltage, the device with SVA exhibited enhanced dissociation of charge-transfer excitons, leading to an improved short-circuit current density and a remarkable power conversion efficiency (PCE) of 9.41%, one of the best for solution-processed OSCs based on small-molecule donor materials. Our study also clearly shows that removing the nonradiative recombination pathways and/or suppressing energetic disorder in the active layer would result in more long-lived charge carriers and enhanced open-circuit voltage, which are prerequisites for further improving the PCE.

  1. Some device implications of voltage controlled magnetic anisotropy in Co/Gd2O3 thin films through REDOX chemistry

    Science.gov (United States)

    Hao, Guanhua; Noviasky, Nicholas; Cao, Shi; Sabirianov, Ildar; Yin, Yuewei; Ilie, Carolina C.; Kirianov, Eugene; Sharma, Nishtha; Sokolov, Andrei; Marshall, Andrew; Xu, Xiaoshan; Dowben, Peter A.

    2018-04-01

    The effect of intermediate interfacial oxidation on the in-plane magnetization of multilayer stack Pt/Co/Gd2O3, on a p-type silicon substrate, has been investigated by magneto-optical Kerr effect (MOKE) measurements, the anomalous Hall effect, and magnetoresistance measurements. While voltage controlled perpendicular magnetic anisotropy of a metal/oxide heterostructure is known, this heterostructure displays an inverse relationship between voltage and coercivity. The anomalous Hall effect demonstrates a significant change in hysteresis, with the applied bias sign. There is a higher perpendicular magnetic anisotropy with positive bias exposure.

  2. Low temperature transient response and electroluminescence characteristics of OLEDs based on Alq{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Chao [Key Laboratory of Semiconductor Material Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); College of Materials Science and Optoelectronic Devices, University of Chinese Academy of Sciences, Beijing 100049 (China); Guan, Min, E-mail: guanmin@semi.ac.cn [Key Laboratory of Semiconductor Material Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhang, Yang [Key Laboratory of Semiconductor Material Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); College of Materials Science and Optoelectronic Devices, University of Chinese Academy of Sciences, Beijing 100049 (China); Li, Yiyang; Liu, Shuangjie [Key Laboratory of Semiconductor Material Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zeng, Yiping [Key Laboratory of Semiconductor Material Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); College of Materials Science and Optoelectronic Devices, University of Chinese Academy of Sciences, Beijing 100049 (China)

    2017-08-15

    Highlights: • The dependency relation between transmission rate and electron transport layer is revealed. • The critical temperature points for the influence of luminescent materials and injection barriers on delay time are found. • The influence of light-emitting material and injection layer on carrier accumulation is quantified. - Abstract: In this work, the organic light-emitting diodes (OLEDs) based on Alq{sub 3} are fabricated. In order to make clear the transport mechanism of carriers in organic light-emitting devices at low temperature, detailed electroluminescence transient response and the current-voltage–luminescence (I–V–L) characteristics under different temperatures in those OLEDs are investigated. It founds that the acceleration of brightness increases with increasing temperature is maximum when the temperature is 200 K and it is mainly affected by the electron transport layer (Alq{sub 3}). The MoO{sub 3} injection layer and the electroluminescent layer have great influence on the delay time when the temperature is 200 K. Once the temperature is greater than 250 K, the delay time is mainly affected by the MoO{sub 3} injection layer. On the contrary, the fall time is mainly affected by the electroluminescent material. The V{sub f} is the average growth rate of fall time when the temperature increases 1 K which represents the accumulation rate of carriers. The difference between V{sub f} caused by the MoO{sub 3} injection layer is 0.52 us/K and caused by the electroluminescent material Ir(ppy){sub 3} is 0.73 us/K.

  3. Efficient light emitting devices based on phosphorescent partially doped emissive layers

    KAUST Repository

    Yang, Xiaohui; Jabbour, Ghassan E.

    2013-01-01

    We report efficient organic light emitting devices employing an ultrathin phosphor emissive layer. The electroluminescent spectra of these devices can be tuned by introducing a low-energy emitting phosphor layer into the emission zone. Devices

  4. Temperature dependence of electroluminescent emission from (ZnS : Cu, Mn(H)) type luminophors

    International Nuclear Information System (INIS)

    Singh, L.K.

    1986-04-01

    The dependence of electroluminescent yield on temperature for hydrogen coactivated (ZnS : Cu, Mn) type triple band emitting phosphors has been investigated at various temperatures under varied operating conditions of excitations. The influence of the excitation frequency, voltage and of emission wavelengths for the electroluminescent characteristics has also been observed on temperature variations. The results have also been studied for temperature dependences of emitting brightness under the excitation by UV-radiations of 3650 A.U. and a comparison is made between temperature dependent characteristics of E.L. and PL-brightness of emissions. It was observed that, as usual, brightness maxima on temperature scale varied with alteration of operating electric fields regarding frequency and voltage both for blue, green and yellow orange emissions of attempted samples. The important thing which is observed here, is that with regards the temperature EL-intensities vary respectively for all respective emissions but emission peaks are not shifted on wave-length scale. This no shift is due to the narrowly and compactly distributed coactivator levels of hydrogen. (author)

  5. Effect of the polymer emission on the electroluminescence characteristics of n-ZnO nanorods/p-polymer hybrid light emitting diode

    Science.gov (United States)

    Zaman, S.; Zainelabdin, A.; Amin, G.; Nur, O.; Willander, M.

    2011-09-01

    Hybrid light emitting diodes (LEDs) based on zinc oxide (ZnO) nanorods and polymers (single and blended) were fabricated and characterized. The ZnO nanorods were grown by the chemical bath deposition method at 50°C. Three different LEDs, with blue emitting, orange-red emitting or their blended polymer together with ZnO nanorods, were fabricated and studied. The current-voltage characteristics show good diode behavior with an ideality factor in the range of 2.1 to 2.27 for all three devices. The electroluminescence spectrum (EL) of the blended device has an emission range from 450 nm to 750 nm, due to the intermixing of the blue emission generated by poly(9,9-dioctylfluorene) denoted as PFO with orange-red emission produced by poly(2-methoxy-5(20-ethyl-hexyloxy)-1,4-phenylenevinylene) 1,4-phenylenevinylene) symbolized as MEH PPV combined with the deep-band emission (DBE) of the ZnO nanorods, i.e. it covers the whole visible region and is manifested as white light. The CIE color coordinates showed bluish, orange-red and white emission from the PFO, MEH PPV and blended LEDs with ZnO nanorods, respectively. These results indicate that the choice of the polymer with proper concentration is critical to the emitted color in ZnO nanorods/p-organic polymer LEDs and careful design should be considered to obtain intrinsic white light sources.

  6. Electroluminescence properties of organic light-emitting diodes with a red dye doped into Alq{sub 3} : rubrene mixed host

    Energy Technology Data Exchange (ETDEWEB)

    Kang, H. Y. [Inha University, Incheon (Korea, Republic of); Lee, C. H. [Seoul National University, Seoul (Korea, Republic of)

    2004-09-15

    We have studied the electroluminescence (EL) properties of devices with a red fluorescent dye, 4-(dicyanomethylene)-2-t-butyl-6- (1,1,7,7-tetramethyl-julolidyl-9-enyl)--4H-py ran (DCJTB), doped into a mixed matrix of tris-(8-hydroxyquinoline)aluminum (Alq{sub 3}) and rubrene. The devices doped with DCJTB in the Alq{sub 3}:rubrene mixed host show an efficient red emission from DCJTB with negligible EL emission from both Alq{sub 3} and rubrene. The QE increases with increasing rubrene concentration and reaches a maximum of about 3.6 % for a DCJTB doping concentration of about 5 % in the Alq3:rubrene mixed (50:50 % ratio by weight) host, and then decreases at higher rubrene concentration, due to the concentration quenching effect. At a given bias voltage, the current density increases with increasing rubrene doping concentration, but it decreases with increasing DCJTB doping concentration. The results imply that the injected electrons and holes can transport via hopping through the energy levels of rubrene molecules while DCJTB acts as traps.

  7. Optically-powered Voltage-supply-device for Effective Utilization of Optical Energy in the Fiber-To-The-Home Network

    Science.gov (United States)

    Fukano, Hideki; Shinagawa, Takeshi; Tsuruta, Kenji

    An optically powered device with using InGaAs-Photodiode has been developed. This study aims to harvest light energy (2.8∼500μW) from the FTTH (Fiber To The Home) network and to utilize it for operating remote sensors without external energy sources. First, we designed and evaluated the characteristics of the booster circuit and confirmed that it could boost an input voltage of 0.3 V to 3.0 V. Next, we also evaluated the characteristics of InGaAs photodiode and confirmed that it can output a voltage over 0.3 V at 10-μW input light. We demonstrate that a ready-made sensor can be operated with an input optical power as low as 10 μW.

  8. Proposal for a dual-gate spin field effect transistor: A device with very small switching voltage and a large ON to OFF conductance ratio

    Science.gov (United States)

    Wan, J.; Cahay, M.; Bandyopadhyay, S.

    2008-06-01

    We propose a new dual gate spin field effect transistor (SpinFET) consisting of a quasi one-dimensional semiconductor channel sandwiched between two half-metallic contacts. The gate voltage aligns and de-aligns the incident electron energy with Ramsauer resonance levels in the channel, thereby modulating the source-to-drain conductance. The device can be switched from ON to OFF with a few mV change in the gate voltage, resulting in exceedingly low dynamic power dissipation during switching. The conductance ON/OFF ratio stays fairly large ( ∼60) up to a temperature of 10 K. This conductance ratio is comparable to that achievable with carbon nanotube transistors.

  9. Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness.

    Science.gov (United States)

    Li, Junqiang; Shan, Xin; Bade, Sri Ganesh R; Geske, Thomas; Jiang, Qinglong; Yang, Xin; Yu, Zhibin

    2016-10-03

    Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires an electron-injection layer (EIL) between the cathode and the emissive layer and a hole-injection layer (HIL) between the anode and the emissive layer. The recent advancement of halide perovskite semiconductors opens up a new path to electroluminescent devices with a greatly simplified device structure. We report cesium lead tribromide light-emitting diodes (LEDs) without the aid of an EIL or HIL. These so-called single-layer LEDs have exhibited a sub-band gap turn-on voltage. The devices obtained a brightness of 591 197 cd m -2 at 4.8 V, with an external quantum efficiency of 5.7% and a power efficiency of 14.1 lm W -1 . Such an advancement demonstrates that very high efficiency of electron and hole injection can be obtained in perovskite LEDs even without using an EIL or HIL.

  10. Photoluminescent (PL) or electroluminescent (EL) quantum dots for display, lighting, and photomedicine (Conference Presentation)

    Science.gov (United States)

    Dong, Yajie

    2017-02-01

    Quantum dots (QDs) have gone through a long journey before finding their ways into the display field. This talk will briefly touch on the history before trying to answer several key questions related to QDs applications in display: What are QDs? How are they made? What properties do they have and Why? How can these properties be used to improve color and efficiency of display, in either photoluminescence (PL) or electroluminescence (EL) mode? And what are the remaining challenges for QDs wide adoption in display industry? Lastly, some most recent progresses in our UCF lab at both PL and EL fronts will be highlighted. For PL, a cadmium-free perovskite-polymer composite films with exceptionally narrow emission green peaks (FWHM 20 nm) and good water and thermal stability will be reported. Together with red quantum dots or PFS/KSF phosphors as down-converters for blue LEDs, a white-light source with 95% Rec. 2020 color gamut was demonstrated [1]. For EL, red quantum dot light emitting devices (QLEDs) with record luminance of 165,000 Cd/m2 has been obtained at a current density of 1000 mA/cm2 with a low driving voltage of 5.8 V and CIE coordinates of (0.69, 0.31). [2] The potential of using these QLEDs for light sources for integrated sensing platform [3] or high efficiency, high color quality hybrid white OLED [4] will be discussed. [1] Y. N. Wang, J. He, H. Chen, J. S. Chen, R. D. Zhu, P. Ma, A. Towers, Y. Lin, A. J. Gesquiere, S. T. Wu, Y. J. Dong. Ultrastable, Highly Luminescent Organic-Inorganic Perovskite - Polymer Composite Films, Advanced Materials, accepted, (2016). [2] Y. J. Dong, J.M. Caruge, Z. Q. Zhou, C. Hamilton, Z. Popovic, J. Ho, M. Stevenson, G. Liu, V. Bulovic, M. Bawendi, P. T. Kazlas, S. Coe-Sullivan, and J. Steckel Ultra-bright, Highly Efficient, Low Roll-off Inverted Quantum-Dot Light Emitting Devices (QLEDs). SID Symp. Dig. Tech. Pap. 46, 270-273 (2015). [3] J. He, H. Chen, S. T. Wu, and Y. J. Dong, Integrated Sensing Platform Based on Quantum

  11. Line voltage distortions due to operation of the power supply devices required for plasma heating and magnetic field generation in the W7X thermonuclear fusion experiment

    International Nuclear Information System (INIS)

    Werner, F.

    1997-03-01

    The operation of the W7-X plasma heating devices requires high voltage DC power supplies with a total electrical power of 40 MVA. For this purpose twelve-pulse AC/DC converters are projected. These converters enforce a non sinusoidal line current, whose harmonics are causing corresponding line voltage distortions. To evaluate the extent of these distortions, the reaction of the harmonic currents on the AC line, is investigated by numerical network analysis. This is done for both, the 20 kV-junction point of the converters and the 110 kV-line terminal of the electricity supply company. Furthermore the design of LC series-resonant circuits, projected for power factor correction and damping of the harmonic content of the line voltage, has been verified. The additional operation of the 1.5 MVA magnet power supplies also contributes, even though to a much smaller extent, to the line voltage distortion. The influence of these twelve-pulse AC/DC converters was investigated too. The numerical calculations have been done with the aid of the network simulation program 'Pspice'. In an equivalent circuit the transmission line network and the transformers are represented by their inductances respectively equivalent inductances. The rectifier units are simulated by a number of current sources, producing the current harmonics in amplitude, frequency and phase. The harmonics amplitudes of the plasma heating power supplies are frequency and phase. The harmonics amplitudes of the plasma heating power supplies are measured values given by the manufacturer. For the magnet power supplies, the harmonics are derived from the theoretical step like I(t) current shape by Fourier series decomposition. Due to the action of the LC circuits the achieved characteristic voltage quality values are far below the permissible values corresponding to the recommendations of VDE 0160. (orig.) [de

  12. Large magneto-conductance and magneto-electroluminescence in exciplex-based organic light-emitting diodes at room temperature

    Science.gov (United States)

    Ling, Yongzhou; Lei, Yanlian; Zhang, Qiaoming; Chen, Lixiang; Song, Qunliang; Xiong, Zuhong

    2015-11-01

    In this work, we report on large magneto-conductance (MC) over 60% and magneto-electroluminescence (MEL) as high as 112% at room temperature in an exciplex-based organic light-emitting diode (OLED) with efficient reverse intersystem crossing (ISC). The large MC and MEL are individually confirmed by the current density-voltage characteristics and the electroluminescence spectra under various magnetic fields. We proposed that this type of magnetic field effect (MFE) is governed by the field-modulated reverse ISC between the singlet and triplet exciplex. The temperature-dependent MFEs reveal that the small activation energy of reverse ISC accounts for the large MFEs in the present exciplex-based OLEDs.

  13. Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix

    Energy Technology Data Exchange (ETDEWEB)

    Parkhomenko, Ya. A.; Ivanov, E. V.; Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-11-15

    The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a p-n junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength {lambda} = 3.5 {mu}m, contained a positive-luminescence emission band at 3.8 {mu}m, caused by radiative transitions involving localized states of quantum dots at the type-II InSb/InAs heterointerface.

  14. A simulation toolkit for electroluminescence assessment in rare event experiments

    CERN Document Server

    Oliveira, C A B; Veenhof, R; Biagi, S; Monteiro, C M B; Santos, J M F dos; Ferreira, A L; Veloso, J F C A

    2011-01-01

    A good understanding of electroluminescence is a prerequisite when optimising double-phase noble gas detectors for Dark Matter searches and high-pressure xenon TPCs for neutrinoless double beta decay detection. A simulation toolkit for calculating the emission of light through electron impact on neon, argon, krypton and xenon has been developed using the Magboltz and Garfield programs. Calculated excitation and electroluminescence efficiencies, electroluminescence yield and associated statistical fluctuations are presented as a function of electric field. Good agreement with experiment and with Monte Carlo simulations has been obtained.

  15. Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

    Science.gov (United States)

    Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

    2017-07-01

    Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

  16. Voltage regulator for generator

    Energy Technology Data Exchange (ETDEWEB)

    Naoi, K

    1989-01-17

    It is an object of this invention to provide a voltage regulator for a generator charging a battery, wherein even if the ambient temperature at the voltage regulator rises abnormally high, possible thermal breakage of the semiconductor elements constituting the voltage regulator can be avoided. A feature of this invention is that the semiconductor elements can be protected from thermal breakage, even at an abnormal ambient temperature rise at the voltage regulator for the battery charging generator, by controlling a maximum conduction ratio of a power transistor in the voltage regulator in accordance with the temperature at the voltage regulator. This is achieved through a switching device connected in series to the field coil of the generator and adapted to be controlled in accordance with an output voltage of the generator and the ambient temperature at the voltage regulator. 6 figs.

  17. Stable electroluminescence from passivated nano-crystalline porous silicon using undecylenic acid

    Science.gov (United States)

    Gelloz, B.; Sano, H.; Boukherroub, R.; Wayner, D. D. M.; Lockwood, D. J.; Koshida, N.

    2005-06-01

    Stabilization of electroluminescence from nanocrystalline porous silicon diodes has been achieved by replacing silicon-hydrogen bonds terminating the surface of nanocrystalline silicon with more stable silicon-carbon (Si-C) bonds. Hydrosilylation of the surface of partially and anodically oxidized porous silicon samples was thermally induced at about 90 °C using various different organic molecules. Devices whose surface have been modified with stable covalent bonds shows no degradation in the EL efficiency and EL output intensity under DC operation for several hours. The enhanced stability can be attributed to the high chemical resistance of Si-C bonds against current-induced surface oxidation associated with the generation of nonradiative defects. Although devices treated with 1-decene exhibit reduced EL efficiency and brightness compared to untreatred devices, other molecules, such as ethyl-undecylenate and particularly undecylenic acid provide stable and more efficient visible electroluminescence at room temperature. Undecylenic acid provides EL brightness as high as that of an untreated device.

  18. Stable electroluminescence from passivated nano-crystalline porous silicon using undecylenic acid

    Energy Technology Data Exchange (ETDEWEB)

    Gelloz, B.; Sano, H.; Koshida, N. [Dept. Elec. and Elec. Eng., Tokyo Univ. of A and T, Koganei, Tokyo 184-8588 (Japan); Boukherroub, R. [Laboratoire de Physique de la Matiere Condensee, Ecole Polytechnique, Route de Saclay, 91128 Palaiseau (France); Wayner, D.D.M.; Lockwood, D.J. [National Research Council, Ottawa (Canada)

    2005-06-01

    Stabilization of electroluminescence from nanocrystalline porous silicon diodes has been achieved by replacing silicon-hydrogen bonds terminating the surface of nanocrystalline silicon with more stable silicon-carbon (Si-C) bonds. Hydrosilylation of the surface of partially and anodically oxidized porous silicon samples was thermally induced at about 90 C using various different organic molecules. Devices whose surface have been modified with stable covalent bonds shows no degradation in the EL efficiency and EL output intensity under DC operation for several hours. The enhanced stability can be attributed to the high chemical resistance of Si-C bonds against current-induced surface oxidation associated with the generation of nonradiative defects. Although devices treated with 1-decene exhibit reduced EL efficiency and brightness compared to untreated devices, other molecules, such as ethyl-undecylenate and particularly undecylenic acid provide stable and more efficient visible electroluminescence at room temperature. Undecylenic acid provides EL brightness as high as that of an untreated device. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. The Electroluminescence Mechanism of Solution-Processed TADF Emitter 4CzIPN Doped OLEDs Investigated by Transient Measurements

    Directory of Open Access Journals (Sweden)

    Peng Wang

    2016-10-01

    Full Text Available High efficiency, solution-processed, organic light emitting devices (OLEDs, using a thermally-activated delayed fluorescent (TADF emitter, 1,2,3,5-tetrakis(carbazol-9-yl-4,6-dicyanobenzene (4CzIPN, are fabricated, and the transient electroluminescence (EL decay of the device with a structure of [ITO/PEDOT: PSS/4CzIPN 5 wt % doped 4,40-N,N0-dicarbazolylbiphenyl(CBP/bis-4,6-(3,5-di-4-pyridylphenyl-2-methylpyrimidine (B4PyMPM/lithium fluoride (LiF/Al], is systematically studied. The results shed light on the dominant operating mechanism in TADF-based OLEDs. Electroluminescence in the host–guest system is mainly produced from the 4CzIPN emitter, rather than the exciplex host materials.

  20. Impacts of ESD Reliability by Different Layout Engineering in the 0.25-μm 60-V High-Voltage LDMOS Devices

    Science.gov (United States)

    Chen, Shen-Li; Lin, Chun-Ju; Yu-Ting, Huang

    2018-02-01

    How to effectively enhance the reliability robustness in high-voltage (HV) BCD [(bipolar) complementary metal-oxide semiconductor (CMOS) diffusion metaloxide semiconductor (DMOS)] processes is an important issue. Influences of layouttype dependences on anti-electrostatic discharge (ESD) robustness in a 0.25-μm 60-V process will be studied in this chapter, which includes, in part (1), the traditional striped-type n-channel lateral-diffused MOSFET (nLDMOS), waffle-type nLDMOS, and nLDMOS embedded with a "p-n-p"-arranged silicon-controlled rectifier (SCR) devices in the drain side; and in part (2) a p-channel LDMOS (pLDMOS) with an embedded "p-n-p-n-p"-arranged-type SCR in the drain side (diffusion regions of the drain side is P+-N+-P+-N+-P+). Then, these LDMOS devices are used to evaluate the influence of layout architecture on trigger voltage (Vt1), holding voltage (Vh), and secondary breakdown current (It2). Eventually, the sketching of the layout pattern of a HV LDMOS is a very important issue in the anti-ESD consideration. Also, in part (1), the waffle-type nLDMOS DUT contributes poorly to It2 robustness due to the non-uniform turned-on phenomenon and a narrow channel width per unit finger. Therefore, the It2 robustness of a waffle-type nLDMOS device is decreased about 17% as compared to a traditional striped-type nLDMOS device (reference DUT-1). The ESD abilities of traditional stripedtype and waffle-type nLDMOS devices with an embedded SCR ("p-n-p"-manner arrangement in the drain side) are better than a traditional nLDMOS 224.4% in average. Noteworthy, the nLDMOS-SCR with the "p-n-p" -arranged-type in the drainend is a good structure for the anti-ESD reliability especially in HV usages. Furthermore, in part (2) this layout manner of P+ discrete-island distributions in the drain-side have some impacts on the anti-ESD and anti-latch-up (LU) immunities. All of their It2 values have reached above 6 A; however, the major repercussion is that the Vh value will be

  1. Investigating side chain mediated electroluminescence from carbazole-modified polyfluorene.

    Science.gov (United States)

    Liao, Jin-Long; Chen, Xiwen; Liu, Ching-Yang; Chen, Show-An; Su, Chiu-Huen; Su, An-Chung

    2007-09-06

    In molecular design of electroluminescent (EL) conjugated polymers, introducing a charge transport moiety on a side chain is found to be a promising method for balancing electron and hole fluxes in EL devices without changing the emitting color if there is no interaction between moiety and main chain. In the case of grafting a carbazole (Cz) moiety (hole transporting) on blue emitting polyfluorene, a green emission appears with intensity comparable to the blue emission, which was attributed to a possible interaction between main chain and Cz as previously reported by us. Here, a detailed study of its EL mechanism was carried out by means of time-resolved EL with the assistance of molecular simulation and thermally stimulated current measurements; exploration of how main chain segments interact with the transport moiety was performed. We found the Cz groups in Cz100PF play multiple roles: they act as (1) hole transporter to improve hole injection, (2) hole trapping site for efficient electron-hole recombination to yield blue-emitting excitons, and (3) source of green emission from electroplex formed via electric field-mediated interaction of the Cz/Cz radical cation with an electron in the nearby PF backbone. In combination, these observations suggest that integrated consideration for both intramolecular and intermolecular interactions provides a new route of molecular design of efficient EL polymers.

  2. Photoluminescence and electroluminescence of a novel green-yellow emitting material-5,6-Bis-[4-(naphthalene-1-yl-phenyl-amino)-phenyl] -pyrazine-2,3-dicarbonitrile

    International Nuclear Information System (INIS)

    Chew Siewling; Wang Pengfei; Hong Zirou; Kwong, H.L.; Tang Jianxin; Sun Shiling; Lee, C.S.; Lee, S.-T.

    2007-01-01

    A new compound with intramolecular charge transfer (ICT) property-5,6-Bis-[4-(naphthalene-1-yl-phenyl-amino)-phenyl] -pyrazine-2,3-dicarbonitrile(BNPPDC) was synthesized. The new compound was strongly fluorescent in non-polar and moderately polar solvents, as well as in thin solid film. The absorption and emission maxima shifted to longer wavelength with increasing solvent polarity. The fluorescence quantum yield also increased with increasing solvent polarity from non-polar to moderately polar solvents, then decreased with further increase of solvent polarity. This indicates both 'positive' and 'negative' solvatokinetic effects co-existed. Using this material as hole-transporting emitter and host emitter, we fabricated two electroluminescent (EL) devices with structures of A (ITO/BNPPDC (45 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) (45 nm)/Mg:Ag (200 nm) and B (ITO/N,N'-diphenyl-N,N'-bis-(3-methylphenyl) (1,1'-diphenyl)4,4'-diamine (TPD) (50 nm)/BNPPDC (20 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) (45 nm)/Mg:Ag (200 nm). The devices showed green-yellow EL emission with good efficiency and high brightness. For example, the device A exhibited a high brightness of 17400 cd/m 2 at a driving voltage of 11 V and a very low turn-on voltage (2.9 V), as well as a maximum luminous efficiency 3.61 cd/A. The device B showed a similar performance with a high brightness of 12650 cd/m 2 at a driving voltage of 13 V and a maximum luminous efficiency 3.62 cd/A. In addition, the EL devices using BNPPDC as a host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) as a dopant (configuration: ITO/TPD (60 nm)/BNPPDC:DCJTB (2%) (30 nm)/TPBI (35 nm)/Mg:Ag (200 nm)) showed a good performance with a brightness of 150 cd/m 2 at 4.5 V, a maximum brightness of 12600 cd/m 2 at 11.5 V, and a maximum luminous efficiency of 3.30 cd/A

  3. Photoluminescence and electroluminescence of a novel green-yellow emitting material-5,6-Bis-[4-(naphthalene-1-yl-phenyl-amino)-phenyl] -pyrazine-2,3-dicarbonitrile

    Energy Technology Data Exchange (ETDEWEB)

    Chew Siewling [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Wang Pengfei [Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100101 (China)]. E-mail: wangpf@mail.ipc.ac.cn; Hong Zirou [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Kwong, H.L. [Department of Biology and Chemistry, City University of Hong Kong, Hong Kong (China); Tang Jianxin [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Sun Shiling [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Lee, C.S. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China)]. E-mail: apcslee@cityu.edu.hk; Lee, S.-T. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China)]. E-mail: apannale@cityu.edu.hk

    2007-06-15

    A new compound with intramolecular charge transfer (ICT) property-5,6-Bis-[4-(naphthalene-1-yl-phenyl-amino)-phenyl] -pyrazine-2,3-dicarbonitrile(BNPPDC) was synthesized. The new compound was strongly fluorescent in non-polar and moderately polar solvents, as well as in thin solid film. The absorption and emission maxima shifted to longer wavelength with increasing solvent polarity. The fluorescence quantum yield also increased with increasing solvent polarity from non-polar to moderately polar solvents, then decreased with further increase of solvent polarity. This indicates both 'positive' and 'negative' solvatokinetic effects co-existed. Using this material as hole-transporting emitter and host emitter, we fabricated two electroluminescent (EL) devices with structures of A (ITO/BNPPDC (45 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) (45 nm)/Mg:Ag (200 nm) and B (ITO/N,N'-diphenyl-N,N'-bis-(3-methylphenyl) (1,1'-diphenyl)4,4'-diamine (TPD) (50 nm)/BNPPDC (20 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) (45 nm)/Mg:Ag (200 nm). The devices showed green-yellow EL emission with good efficiency and high brightness. For example, the device A exhibited a high brightness of 17400 cd/m{sup 2} at a driving voltage of 11 V and a very low turn-on voltage (2.9 V), as well as a maximum luminous efficiency 3.61 cd/A. The device B showed a similar performance with a high brightness of 12650 cd/m{sup 2} at a driving voltage of 13 V and a maximum luminous efficiency 3.62 cd/A. In addition, the EL devices using BNPPDC as a host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) as a dopant (configuration: ITO/TPD (60 nm)/BNPPDC:DCJTB (2%) (30 nm)/TPBI (35 nm)/Mg:Ag (200 nm)) showed a good performance with a brightness of 150 cd/m{sup 2} at 4.5 V, a maximum brightness of 12600 cd/m{sup 2} at 11.5 V, and a maximum luminous efficiency of 3.30 cd/A.

  4. SEMICONDUCTOR DEVICES: Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs

    Science.gov (United States)

    Jin, Li; Hongxia, Liu; Bin, Li; Lei, Cao; Bo, Yuan

    2010-08-01

    For the first time, a simple and accurate two-dimensional analytical model for the surface potential variation along the channel in fully depleted dual-material gate strained-Si-on-insulator (DMG SSOI) MOSFETs is developed. We investigate the improved short channel effect (SCE), hot carrier effect (HCE), drain-induced barrier-lowering (DIBL) and carrier transport efficiency for the novel structure MOSFET. The analytical model takes into account the effects of different metal gate lengths, work functions, the drain bias and Ge mole fraction in the relaxed SiGe buffer. The surface potential in the channel region exhibits a step potential, which can suppress SCE, HCE and DIBL. Also, strained-Si and SOI structure can improve the carrier transport efficiency, with strained-Si being particularly effective. Further, the threshold voltage model correctly predicts a “rollup" in threshold voltage with decreasing channel length ratios or Ge mole fraction in the relaxed SiGe buffer. The validity of the two-dimensional analytical model is verified using numerical simulations.

  5. Development of the self-learning machine for creating models of microprocessor of single-phase earth fault protection devices in networks with isolated neutral voltage above 1000 V

    Science.gov (United States)

    Utegulov, B. B.; Utegulov, A. B.; Meiramova, S.

    2018-02-01

    The paper proposes the development of a self-learning machine for creating models of microprocessor-based single-phase ground fault protection devices in networks with an isolated neutral voltage higher than 1000 V. Development of a self-learning machine for creating models of microprocessor-based single-phase earth fault protection devices in networks with an isolated neutral voltage higher than 1000 V. allows to effectively implement mathematical models of automatic change of protection settings. Single-phase earth fault protection devices.

  6. Influence of the polymer concentration on the electroluminescence of ZnO nanorod/polymer hybrid light emitting diodes

    Science.gov (United States)

    Zaman, Saima; Zainelabdin, Ahmed; Amin, Gul; Nur, Omer; Willander, Magnus

    2012-09-01

    The effects of the polymer concentration on the performance of hybrid light emitting diodes (LEDs) based on zinc oxide nanorods (ZnO NRs) and poly(9,9-dioctylfluorene) (PFO) were investigated. Various characterization techniques were applied to study the performance of the PFO/ZnO NR hybrid LEDs fabricated with various PFO concentrations. The fabricated hybrid LEDs demonstrated stable rectifying diode behavior, and it was observed that the turn-on voltage of the LEDs is concentration dependent. The measured room temperature electroluminescence (EL) showed that the PFO concentration plays a critical role in the emission spectra of the hybrid LEDs. At lower PFO concentrations of 2-6 mg/ml, the EL spectra are dominated by blue emission. However, by increasing the concentration to more than 8 mg/ml, the blue emission was completely suppressed while the green emission was dominant. This EL behavior was explained by a double trap system of excitons that were trapped in the β-phase and/or in the fluorenone defects in the PFO side. The effects of current injection on the hybrid LEDs and on the EL emission were also investigated. Under a high injection current, a new blue peak was observed in the EL spectrum, which was correlated to the creation of a new chemical species on the PFO chain. The green emission peak was also enhanced with increasing injection current because of the fluorenone defects. These results indicate that the emission spectra of the hybrid LEDs can be tuned by using different polymer concentrations and by varying the current injected into the device.

  7. Voltage color tunable OLED with (Sm,Eu)-β-diketonate complex blend

    Science.gov (United States)

    Reyes, R.; Cremona, M.; Teotonio, E. E. S.; Brito, H. F.; Malta, O. L.

    2004-09-01

    Light emission from organic electroluminescent diodes (OLEDs) in which mixed samarium and europium β-diketonate complexes, [Sm 0.7Eu 0.3(TTA) 3(TPPO) 2], was used as the emitting layer is described. The electroluminescence spectra exhibit narrow peaks arising from 4f-intraconfigurational transitions of the Sm 3+ and Eu 3+ ions and a broad emission band attributed to the electrophosphorescence of the TTA ligand. The intensity ratio of the peaks determined by the bias voltage applied to the OLED, together with the ligand electrophosphorescence, allows to obtain a voltage-tunable color light source.

  8. Analysis of interfacial energy states in Au/pentacene/polyimide/indium-zinc-oxide diodes by electroluminescence spectroscopy and electric-field-induced optical second-harmonic generation measurement

    Science.gov (United States)

    Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2016-03-01

    By using electroluminescence (EL) spectroscopy and electric-field-induced optical second-harmonic generation (EFISHG) measurement, we analyzed interfacial energy states in Au/pentacene/polyimide/indium-zinc-oxide (IZO) diodes, to characterize the pentacene/polyimide interface. Under positive voltage application to the Au electrode with reference to the IZO electrode, the EFISHG showed that holes are injected from Au electrode, and accumulate at the pentacene/polyimide interface with the surface charge density of Qs = 3.8 × 10-7 C/cm2. The EL spectra suggested that the accumulated holes are not merely located in the pentacene but they are transferred to the interface states of polyimide. These accumulated holes distribute with the interface state density greater than 1012 cm-2 eV-1 in the range E = 1.5-1.8 and 1.7-2.4 eV in pentacene and in polyimide, respectively, under assumption that accumulated holes govern recombination radiation. The EL-EFISHG measurement is helpful to characterize organic-organic layer interfaces in organic devices and provides a way to analyze interface energy states.

  9. Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes

    Directory of Open Access Journals (Sweden)

    P. Chen

    2017-03-01

    Full Text Available The hole distribution and electroluminescence property improvement by adjusting the relative position between quantum wells and p-doped region in InGaN/GaN multiple-quantum-well structures are experimentally and theoretically investigated. Five designed samples with different barrier layer parameters of multiple-quantum-well structure are grown by MOCVD and then fabricated into devices. The electroluminescence properties of these samples are measured and compared. It is found that the output electroluminescence intensity of samples is enhanced if the position of quantum wells shifts towards p-side, while the output power is reduced if their position is shifted towards the n-side. The theoretical calculation of characteristics of these devices using the simulation program APSYS agrees well with the experimental data, illustrating that the effect of relative position between p-doped region and quantum wells on the improvement of hole distribution and electroluminescence performance is significant, especially for InGaN/GaN multiple-quantum-well devices operated under high injection condition.

  10. Reduced voltage losses yield 10% efficient fullerene free organic solar cells with >1 V open circuit voltages

    KAUST Repository

    Baran, D.

    2016-11-09

    Optimization of the energy levels at the donor-acceptor interface of organic solar cells has driven their efficiencies to above 10%. However, further improvements towards efficiencies comparable with inorganic solar cells remain challenging because of high recombination losses, which empirically limit the open-circuit voltage (Voc) to typically less than 1 V. Here we show that this empirical limit can be overcome using non-fullerene acceptors blended with the low band gap polymer PffBT4T-2DT leading to efficiencies approaching 10% (9.95%). We achieve Voc up to 1.12 V, which corresponds to a loss of only Eg/q - Voc = 0.5 ± 0.01 V between the optical bandgap Eg of the polymer and Voc. This high Voc is shown to be associated with the achievement of remarkably low non-geminate and non-radiative recombination losses in these devices. Suppression of non-radiative recombination implies high external electroluminescence quantum efficiencies which are orders of magnitude higher than those of equivalent devices employing fullerene acceptors. Using the balance between reduced recombination losses and good photocurrent generation efficiencies achieved experimentally as a baseline for simulations of the efficiency potential of organic solar cells, we estimate that efficiencies of up to 20% are achievable if band gaps and fill factors are further optimized. © The Royal Society of Chemistry 2016.

  11. Theoretical investigation on current-voltage characteristics in all-carbon molecular device with different contact geometries

    International Nuclear Information System (INIS)

    Ye Fuqiu; Fan Zhiqiang; He Jun; Peng Jun; Tang Liming

    2012-01-01

    Applying nonequilibrium Green's functions in combination with the first-principles density-functional theory, we investigate electronic transport properties of an all-carbon molecular device consisting of one phenalenyl molecule and two zigzag graphene nanoribbons. The results show that the electronic transport properties are strongly dependent on the contact geometry and device's currents can drop obviously when the connect sites change from second-nearest sites from the central atom of the molecule (S site) to third-nearest sites from the central atom of the molecule (T site). More importantly, the negative differential resistance behavior is only observed on the negative bias region when the molecule connects the graphene nanoribbons through two T sites.

  12. Organic Light-Emitting Diodes Based on Phthalimide Derivatives: Improvement of the Electroluminescence Properties

    Directory of Open Access Journals (Sweden)

    Frédéric Dumur

    2018-03-01

    Full Text Available In this study, a phthalimide-based fluorescent material has been examined as a green emitter for multilayered organic light-emitting diodes (OLEDs. By optimizing the device stacking, a maximum brightness of 28,450 cd/m2 at 11.0 V and a maximum external quantum efficiency of 3.11% could be obtained. Interestingly, OLEDs fabricated with Fluo-2 presented a 20-fold current efficiency improvement compared to the previous results reported in the literature, evidencing the crucial role of the device stacking in the electroluminescence (EL performance of a selected emitter. Device lifetime was also examined and an operational stability comparable to that reported for a standard triplet emitter i.e., bis(4-methyl-2,5-diphenyl-pyridineiridium(III acetylacetonate [(mdppy2Iracac] was evidenced.

  13. Photo and electroluminescence of porous silicon layers

    International Nuclear Information System (INIS)

    Keshmini, S.H.; Samadpour, S.; Haji-Ali, E.; Rokn-Abadi, M.R.

    1995-01-01

    Porous silicon (PSi) layers were prepared by both chemical and electrochemical methods on n- and p-type Si substrates. In the former technique, light emission was obtained from p-type and n-type samples. It was found that intense light illumination during the preparation process was essential for PSi formation on n-type substrates. An efficient electrochemical cell with some useful features was designed for electrochemical etching of silicon. Various preparation parameters were studied and photoluminescence emissions ranging from dark red to light blue were obtained from PSi samples prepared on p-type substrates. N-type samples produced emission ranging from dark red to orange yellow. Electroluminescence of porous silicon samples showed that the color of the emission was the same as the photoluminescence color of the sample, and its intensity and duration depended on the current density passed through the sample. The effects of exposure of samples to air, storage in vacuum and heat treatment in air on luminescence intensity of the samples and preparation of patterned porous layers were also studied. (author)

  14. Palladium-based on-wafer electroluminescence studies of GaN-based LED structures

    Energy Technology Data Exchange (ETDEWEB)

    Salcianu, C.O.; Thrush, E.J.; Humphreys, C.J. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Plumb, R.G. [Centre for Photonic Systems, Department of Engineering, University of Cambridge, Cambridge CB3 0FD (United Kingdom); Boyd, A.R.; Rockenfeller, O.; Schmitz, D.; Heuken, M. [AIXTRON AG, Kackertstr. 15-17, 52072 Aachen (Germany)

    2008-07-01

    Electroluminescence (EL) testing of Light Emitting Diode (LED) structures is usually done at the chip level. Assessing the optical and electrical properties of LED structures at the wafer scale prior to their processing would improve the cost effectiveness of producing LED-lamps. A non-destructive method for studying the luminescence properties of the structure at the wafer-scale is photoluminescence (PL). However, the relationship between the on-wafer PL data and the final device EL can be less than straightforward (Y. H Aliyu et al., Meas. Sci. Technol. 8, 437 (1997)) as the two techniques employ different carrier injection mechanisms. This paper provides an overview of some different techniques in which palladium is used as a contact in order to obtain on-wafer electroluminescence information which could be used to screen wafers prior to processing into final devices. Quick mapping of the electrical and optical characteristics was performed using either palladium needle electrodes directly, or using the latter in conjunction with evaporated palladium contacts to inject both electrons and holes into the active region via the p-type capping layer of the structure. For comparison, indium was also used to make contact to the n-layer so that electrons could be directly injected into that layer. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Photoluminescence and electroluminescence of a tripodal compound containing 7-diethylamino-coumarin moiety

    Energy Technology Data Exchange (ETDEWEB)

    Yu Tianzhi; Zhang Peng; Zhang Hui; Meng Jing; Fan Duowang [Key Laboratory of Opto-Electronic Technology and Intelligent Control (Lanzhou Jiaotong University), Ministry of Education, Lanzhou 730070 (China); Zhao Yuling; Dong Wenkui [School of Chemical and Biological Engineering, Lanzhou Jiaotong University, Lanzhou 730070 (China)], E-mail: ytz823@hotmail.com

    2008-12-07

    A novel tripodal compound, tris[2-(7-diethylamino-coumarin-3-carboxamide)ethyl]amine (Tren-C), was synthesized and characterized by elemental analysis, infrared and {sup 1}H-NMR spectra. The photoluminescent (PL) and electroluminescent properties of Tren-C were investigated. Tren-C exhibits different colour emissions in solid states and solutions. The electroluminescence devices comprising vacuum vapour-deposited films using the compound as a dopant were fabricated, showing blue emissions that are identical to its PL spectrum in chloroform solutions. With the device structure of indium tin oxide (ITO)/4, 4', 4''-tris-N-naphthyl-N-phenylamino-triphenylamine (2-TNATA) (5 nm)/N, N'-bis-(naphthyl)-N, N'-diphenyl-1, 1'-biphenyl-4, 4'-diamine (NPB) (40 nm)/4, 4'-bis(9-carbazolyl) biphenyl (CBP) : Tren-C (0.5 wt%, 30 nm)/2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1, 3, 4-oxadiazole (Bu-PBD) (30 nm)/LiF (1 nm)/Al (100 nm), a maximum external quantum efficiency of 2.85%, a maximum luminous efficiency of 3.85 cd A{sup -1} and a maximum luminance of 1450 cd m{sup -2} are realized.

  16. Multifunctional Device based on phosphor-piezoelectric PZT: lighting, speaking, and mechanical energy harvesting.

    Science.gov (United States)

    Lee, Sunghoon; Kang, Taewook; Lee, Wunho; Afandi, Mohammad M; Ryu, Jongho; Kim, Jongsu

    2018-01-10

    We demonstrated the tri-functional device based on all powder-processing methods by using ZnS powder as phosphor layer and piezoelectric material as dielectric layer. The fabricated device generated the electroluminescent (EL) light from phosphor and the sound from piezoelectric sheet under a supply of external electric power, and additionally harvested the reverse-piezoelectric energy to be converted into EL light. Under sinusoidal applied voltage, EL luminances were exponentially increased with a maximum luminous efficiency of 1.3 lm/W at 40 V and 1,000 Hz, and sound pressure levels (SPLs) were linearly increased. The EL luminances were linearly dependent on applied frequency while the SPLs showed the parabolic increase behavior below 1,000 Hz and then the flat response. The temperature dependence on EL luminances and SPLs was demonstrated; the former was drastically increased and the latter was slightly decreased with the increase of temperature. Finally, as an energy harvesting application, the piezoelectric-induced electroluminescence effect was demonstrated by applying only mechanical pressure to the device without any external electric power.

  17. On the origin of excimer emission in electroluminescence and photoluminescence spectra of polyfluorenes

    International Nuclear Information System (INIS)

    Vacha, Martin; Ha, Jaekook; Sato, Hisaya

    2007-01-01

    We report a study on the differences in red-shifted excimer band in photoluminescence (PL) and electroluminescence (EL) spectra of thin films of a copolymer of dibutylfluorene and butylphenylphenoxazine. The relative intensity of the excimer band in PL spectra increases with temperature above the polymer glass transition, and with the intensity of the excitation light. In EL spectra, on the other hand, the relative excimer intensity is seen to decrease with increasing driving voltage. These opposite trends originate from the different nature of excitations in PL and EL spectra: photoexcitation directly creates singlet excitons while electric excitation proceeds via interaction of injected electrons and holes. In case of electric excitation, the observed results might be due to trap-assisted excimer formation

  18. Influence of gamma-irradiation on the electroluminescence of ZnSe:Zn,Te crystals

    International Nuclear Information System (INIS)

    Elmuratova, D.B.; Ibragimova, E.M.

    2007-01-01

    Effect of 60 Co gamma-radiation at the dose rate of 10 Gy/s on electroluminescence (El)Zn Se crystals with 0.5 weight % Te treated in zinc vapor was studied for possible manufacturing of light emitting structures. Broad El band with the maximum at 610 nm is excited in the origin samples at a voltage above 15 V. After irradiation to the high dose of 10 6 Gy the El intensity grows by ∼2.5 times in the direct polarity at 24 V. The observed El of Zn Se:Zn,Te single crystals is assumed to be caused by the charge carrier recombination at the interstitial zinc centers by the excitation mechanism of a barrier sub breakdown type (authors)

  19. Analysis of the current-voltage characteristics of polymer-based organic light-emitting diodes (OLEDs deposited by spin coating

    Directory of Open Access Journals (Sweden)

    Ricardo Vera

    2010-04-01

    Full Text Available Polymer-based organic light-emitting diodes (OLEDs with the structure ITO / PEDOT:PSS / MDMO-PPV / Metal were prepared by spincoating. It is known that electroluminescence of these devices is strongly dependent on the material used as cathode and on the depositionparameters of the polymer electroluminescent layer MDMO-PPV. Objective. In this work the effect of i the frequency of the spin coater(1000-8000 rpm, ii the concentration of the MDMO-PPV: Toluene solution, and iii the material used as cathode (Aluminium or Silveron the electrical response of the devices, was evaluated through current-voltage (I-V measurements. Materials and methods. PEDOT:PPSand MDMO-PPV organic layers were deposited by spin coating on ITO substrates, and the OLED structure was completed with cathodesof aluminium and silver. The electric response of the devices was evaluated based on the I-V characteristics. Results. Diodes prepared withthinner organic films allow higher currents at lower voltages; this can be achieved either by increasing the frequency of the spin coater orby using concentrations of MDMO-PPV: Toluene lower than 2% weight. A fit of the experimental data showed that the diodes have twocontributions to the current. The first one is attributed to parasitic currents between anode and cathode, and the other one is a parallel currentthrough the organic layer, in which the carrier injection mechanism is mediated by thermionic emission. Conclusions. The results of thefitting and the energy level alignment through the whole structure show that PPV-based OLEDs are unipolar devices, with current mainlyattributed to hole transport.

  20. ZnO-nanorod-array/p-GaN high-performance ultra-violet light emitting devices prepared by simple solution synthesis

    Science.gov (United States)

    Jha, Shrawan Kumar; Luan, Chunyan; To, Chap Hang; Kutsay, Oleksandr; Kováč, Jaroslav; Zapien, Juan Antonio; Bello, Igor; Lee, Shuit-Tong

    2012-11-01

    Pure ultra-violet (UV) (378 nm) electroluminescence (EL) from zinc oxide (ZnO)-nanorod-array/p-gallium nitride (GaN) light emitting devices (LEDs) is demonstrated at low bias-voltages (˜4.3 V). Devices were prepared merely by solution-synthesis, without any involvement of sophisticated material growth techniques or preparation methods. Three different luminescence characterization techniques, i.e., photo-luminescence, cathodo-luminescence, and EL, provided insight into the nature of the UV emission mechanism in solution-synthesized LEDs. Bias dependent EL behaviour revealed blue-shift of EL peaks and increased peak sharpness, with increasing the operating voltage. Accelerated bias stress tests showed very stable and repeatable electrical and EL performance of the solution-synthesized nanorod LEDs.

  1. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system...... to unbalanced faults. The compensation of unbalanced voltage sags and voltage unbalance in the CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0........ The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbalances, for the tested cases in the CIGRE LV test network are mainly due to single phase loads and due...

  2. Electroluminescent properties of an electrochemically cross-linkable carbazole peripheral poly(benzyl ether) dendrimer.

    Science.gov (United States)

    Park, Jin Young; Kim, Dong-Eun; Ponnapati, Ramakrishna; Kim, Jong-Min; Kwon, Young-Soo; Advincula, Rigoberto C

    2011-04-04

    The electroluminescent (EL) properties of a cross-linkable carbazole-terminated poly(benzyl ether) dendrimer, G(3)-cbz DN, doped into a PVK:PBD host matrix with a double-layer device configuration are investigated. Different concentrations of the guest material can control device efficiency, related to chromaticity of white emission and the origin of excited-state complexes occurring between hole-transporting carbazole units (PVK or G(3)-cbz DN) and electron-transporting oxadiazole (PBD). Two excited states (exciplex and electroplex) generated at the interfaces of PVK/G(3)-cbz DN and PBD result in competitive emission, exhibiting a broad band in the EL spectra. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Enhancement of open-circuit voltage on organic photovoltaic devices by Al-doped TiO{sub 2} modifying layer produced by sol–gel method

    Energy Technology Data Exchange (ETDEWEB)

    Valaski, R.; Arantes, C.; Senna, C.A.; Carôzo, Victor; Achete, C.A. [Materials Metrology Division, Instituto Nacional de Metrologia, Qualidade e Tecnologia, Xerém, Duque de Caxias 25250-020, RJ (Brazil); Cremona, M., E-mail: cremona@fis.puc-rio.br [Materials Metrology Division, Instituto Nacional de Metrologia, Qualidade e Tecnologia, Xerém, Duque de Caxias 25250-020, RJ (Brazil); Physics Department, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro 22453-970, RJ (Brazil)

    2014-12-01

    Sol–gel method has shown several advantages for oxide synthesis, such as lower cost production, coating large areas, lower processing temperatures and ease insertion of doping materials. Therefore, it is attractive for production of intermediate and electrode modifying layers in organic optoelectronic devices. Herein, spin-coated aluminum-doped titanium dioxide (AlTiO{sub 2}) thin films were produced by sol–gel method onto glass and fluorine-doped tin oxide (FTO) substrates, using different Al-dopant concentrations and post-done annealing temperatures. Electrical measurements were performed in order to investigate the improvement of the TiO{sub 2} resistivity. Additionally, structural, compositional, morphological, optical and electrical properties of the optimal AlTiO{sub 2} modifying layers onto FTO substrates were probed by different techniques, and compared with those obtained from the undoped thin films produced under similar conditions. Organic photovoltaic devices (OPVs) with the structure FTO/AlTiO{sub 2}(30 nm)/C{sub 60}(50 nm)/CuPc(50 nm)/Al with an Al concentration of 0.03 M in AlTiO{sub 2} layer were produced. The insertion of AlTiO{sub 2} thin films improved the short-circuit current density (J{sub sc}) as well as the open circuit voltage (V{sub oc}) in comparison with non-modified electrode FTO based devices. This behavior is discussed in terms of induced interface phenomena as dipole formation induced by Al. - Highlights: • Easy and cheap solution-process for AlTiO{sub 2} modification of FTO electrode for OPVs • Electrical, structural and optical characterization of TiO{sub 2} layers with Al-dopant • Improvement of Voc and Jsc of inverted OPVs with AlTiO{sub 2} modified electrode.

  4. Enhancement of open-circuit voltage on organic photovoltaic devices by Al-doped TiO2 modifying layer produced by sol–gel method

    International Nuclear Information System (INIS)

    Valaski, R.; Arantes, C.; Senna, C.A.; Carôzo, Victor; Achete, C.A.; Cremona, M.

    2014-01-01

    Sol–gel method has shown several advantages for oxide synthesis, such as lower cost production, coating large areas, lower processing temperatures and ease insertion of doping materials. Therefore, it is attractive for production of intermediate and electrode modifying layers in organic optoelectronic devices. Herein, spin-coated aluminum-doped titanium dioxide (AlTiO 2 ) thin films were produced by sol–gel method onto glass and fluorine-doped tin oxide (FTO) substrates, using different Al-dopant concentrations and post-done annealing temperatures. Electrical measurements were performed in order to investigate the improvement of the TiO 2 resistivity. Additionally, structural, compositional, morphological, optical and electrical properties of the optimal AlTiO 2 modifying layers onto FTO substrates were probed by different techniques, and compared with those obtained from the undoped thin films produced under similar conditions. Organic photovoltaic devices (OPVs) with the structure FTO/AlTiO 2 (30 nm)/C 60 (50 nm)/CuPc(50 nm)/Al with an Al concentration of 0.03 M in AlTiO 2 layer were produced. The insertion of AlTiO 2 thin films improved the short-circuit current density (J sc ) as well as the open circuit voltage (V oc ) in comparison with non-modified electrode FTO based devices. This behavior is discussed in terms of induced interface phenomena as dipole formation induced by Al. - Highlights: • Easy and cheap solution-process for AlTiO 2 modification of FTO electrode for OPVs • Electrical, structural and optical characterization of TiO 2 layers with Al-dopant • Improvement of Voc and Jsc of inverted OPVs with AlTiO 2 modified electrode

  5. Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage p....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0.......Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage...... problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults...

  6. Electroluminescence and negative differential resistance studies of ...

    Indian Academy of Sciences (India)

    (a) Molecular structure of Alq3, TPD and PBD and (b) single-layer OLED structure fabricated in this ... lowed by deionized water, acetone and isopropanol. The cleaned ... at a higher voltage for the TPD:PDB:Alq3 (4.5 V) as com- pared to that of ...

  7. Modeling of transient electroluminescence overshoot in bilayer organic light-emitting diodes using rate equations

    International Nuclear Information System (INIS)

    Chandra, V.K.; Chandra, B.P.; Tiwari, M.; Baghel, R.N.; Ramrakhiani, M.

    2012-01-01

    When a voltage pulse is applied under forward biased condition to a spin-coated bilayer organic light-emitting diode (OLED), then initially the electroluminescence (EL) intensity appearing after a delay time, increases with time and later on it attains a saturation value. At the end of the voltage pulse, the EL intensity decreases with time, attains a minimum intensity and then it again increases with time, attains a peak value and later on it decreases with time. For the OLEDs, in which the lifetime of trapped carriers is less than the decay time of the EL occurring prior to the onset of overshoot, the EL overshoot begins just after the end of voltage pulse. The overshoot in spin-coated bilayer OLEDs is caused by the presence of an interfacial layer of finite thickness between hole and electron transporting layers in which both transport molecules coexist, whereby the interfacial energy barrier impedes both hole and electron passage. When a voltage pulse is applied to a bilayer OLED, positive and negative space charges are established at the opposite faces of the interfacial layer. Subsequently, the charge recombination occurs with the incoming flux of injected carriers of opposite polarity. When the voltage is turned off, the interfacial charges recombine under the action of their mutual electric field. Thus, after switching off the external voltage the electrons stored in the interface next to the anode cell compartment experience an electric field directed from cathode to anode, and therefore, the electrons move towards the cathode, that is, towards the positive space charge, whereby electron–hole recombination gives rise to luminescence. The EL prior to onset of overshoot is caused by the movement of electrons in the electron transporting states, however, the EL in the overshoot region is caused by the movement of detrapped electrons. On the basis of the rate equations for the detrapping and recombination of charge carriers accumulated at the interface

  8. Automatic Detection of Inactive Solar Cell Cracks in Electroluminescence Images

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    2017-01-01

    We propose an algorithm for automatic determination of the electroluminescence (EL) signal threshold level corresponding to inactive solar cell cracks, resulting from their disconnection from the electrical circuit of the cell. The method enables automatic quantification of the cell crack size an...

  9. Supporting Information Blue and White light electroluminescence in ...

    Indian Academy of Sciences (India)

    Administrator

    Blue and White light electroluminescence in a multilayer OLED using a new Aluminium complex. Pabitra K. Nayak a. , Neeraj Agarwal a. , Farman Ali a. , Meghan P. Patankar b. , K. L.. Narasimhan b. *, N. Periasamy a. *. 1. Department of Chemical Sciences,. 2. Department of Condensed Matter Physics and. Materials ...

  10. Automatic Detection of Inactive Solar Cell Cracks in Electroluminescence Images

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    2017-01-01

    We propose an algorithm for automatic determination of the electroluminescence (EL) signal threshold level corresponding to inactive solar cell cracks, resulting from their disconnection from the electrical circuit of the cell. The method enables automatic quantification of the cell crack size...

  11. Quantifying Solar Cell Cracks in Photovoltaic Modules by Electroluminescence Imaging

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Hacke, Peter; Sera, Dezso

    2015-01-01

    This article proposes a method for quantifying the percentage of partially and totally disconnected solar cell cracks by analyzing electroluminescence images of the photovoltaic module taken under high- and low-current forward bias. The method is based on the analysis of the module’s electrolumin...

  12. Enhancement of Electroluminescence (EL) image measurements for failure quantification methods

    DEFF Research Database (Denmark)

    Parikh, Harsh; Spataru, Sergiu; Sera, Dezso

    2018-01-01

    Enhanced quality images are necessary for EL image analysis and failure quantification. A method is proposed which determines image quality in terms of more accurate failure detection of solar panels through electroluminescence (EL) imaging technique. The goal of the paper is to determine the most...

  13. Functional electronic screen printing – electroluminescent smart fabric watch

    OpenAIRE

    de Vos, Marc; Torah, Russel; Beeby, Steve; Tudor, John

    2013-01-01

    Motivation for screen printed smart fabrics.Introduce functional electronic screen printing on fabrics.Printed smart fabric watch design.Printing process for electroluminescent watch.Demonstration video.Conclusions and further work.Examples of other screen printed smart fabrics.

  14. Electroluminescence from porous silicon due to electron injection from solution

    NARCIS (Netherlands)

    Kooij, Ernst S.; Despo, R.W.; Kelly, J.J.

    1995-01-01

    We report on the electroluminescence from p‐type porous silicon due to minority carrier injection from an electrolyte solution. The MV+• radical cation formed in the reduction of divalent methylviologen is able to inject electrons into the conduction band of crystalline and porous silicon. The

  15. Mitigation of voltage sags in the distribution system with dynamic voltage restorer

    International Nuclear Information System (INIS)

    Viglas, D.; Belan, A.

    2012-01-01

    Dynamic voltage restorer is a custom power device that is used to improve voltage sags or swells in electrical distribution system. The components of the Dynamic Voltage Restorer consist of injection transformers, voltage source inverter, passive filters and energy storage. The main function of the Dynamic voltage restorer is used to inject three phase voltage in series and in synchronism with the grid voltages in order to compensate voltage disturbances. This article deals with mitigation of voltage sags caused by three-phase short circuit. Dynamic voltage restorer is modelled in MATLAB/Simulink. (Authors)

  16. Encapsulation methods for organic electrical devices

    Science.gov (United States)

    Blum, Yigal D.; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijian

    2013-06-18

    The disclosure provides methods and materials suitable for use as encapsulation barriers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device encapsulated by alternating layers of a silicon-containing bonding material and a ceramic material. The encapsulation methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  17. Density-matrix approach for the electroluminescence of molecules in a scanning tunneling microscope.

    Science.gov (United States)

    Tian, Guangjun; Liu, Ji-Cai; Luo, Yi

    2011-04-29

    The electroluminescence (EL) of molecules confined inside a nanocavity in the scanning tunneling microscope possesses many intriguing but unexplained features. We present here a general theoretical approach based on the density-matrix formalism to describe the EL from molecules near a metal surface induced by both electron tunneling and localized surface plasmon excitations simultaneously. It reveals the underlying physical mechanism for the external bias dependent EL. The important role played by the localized surface plasmon on the EL is highlighted. Calculations for porphyrin derivatives have reproduced corresponding experimental spectra and nicely explained the observed unusual large variation of emission spectral profiles. This general theoretical approach can find many applications in the design of molecular electronic and photonic devices.

  18. Electroluminescence analysis for spatial characterization of parasitic optical losses in silicon heterojunction solar cells

    Science.gov (United States)

    Ahmed, Nuha; Zhang, Lei; Sriramagiri, Gowri; Das, Ujjwal; Hegedus, Steven

    2018-04-01

    Electroluminescence (EL) coupled with reflection measurements are used to spatially quantify optical losses in silicon heterojunction solar cells due to plasmonic absorption in the metal back contacts. The effect of indium tin oxide back reflector in decreasing this plasmonic absorption is found to increase the reflection from the back nickel (Ni)-aluminum (Al) and Al metals by ˜12% and ˜41%, respectively, in both bifacial and front junction silicon solar cells. Losses due to back reflection are calculated by comparison between the EL emission signals in high and low back reflection samples and are shown to be in agreement with standard reflection measurements. We conclude that the optical properties of the back contact can significantly influence the EL intensity which complicates the interpretation of EL as being primarily due to recombination especially when comparing two different devices with spatially varying back surface structures.

  19. The colour-tuning effect of 2,9-dimethyl-4,7-diphenyl-1, 10-phenanthroline in blue-red organic light-emitting devices

    International Nuclear Information System (INIS)

    Lin Jian; Xia, Yi-Jie; Tang Chao; Yin Kun; Zhong Gaoyu; Ni Gang; Peng Bo; Hou Xiaoyuan; Gan Fuxi; Huang Wei

    2007-01-01

    This paper reports the fabrication and measurement of organic light-emitting devices comprised of indium-tin-oxide (ITO)/4,4',4-prime-tris(N-carbazolyl)-triphenylamine (TCTA, 8 nm)/2-pyrenyl-9-phenyl-9-pyrenylfluorene(2P9PPF, 30 nm)/ bathocuproine (BCP, with different thickness)/Alq 3 : DCJTB (DCJTB = 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7- tetramethyljulolidyl-9-enyl)-4H-pyran, Alq 3 = tris(8-hydroxyquinolino) aluminium(III), 2% in mass ratio, 30 nm)/Mg : Ag(250 nm). The dependence of electroluminescence (EL) spectra on the BCP layer thickness and operating voltage has been investigated quantitatively. It is shown that the emission colour of the devices changes from red to blue at 8 V when the BCP layer thickness changes from 1 to 10 nm. The emission colour of the devices also varies with the applying voltage even in a given device. The ratio of blue emission originating from 2P9PPF to the red emission originating from DCJTB increases with the applying voltage. Based on the hole blocking effect of the BCP layer, we deduced the dependence of this ratio on the BCP layer thickness and simulated the experimental result well. It is also proposed that the variation of the EL spectrum with the voltage can be attributed to the varying hole blocking effect under the varying electric field, which resulted in a recombination zone shift, and the exciton dissociation effect in the electric field

  20. The colour-tuning effect of 2,9-dimethyl-4,7-diphenyl-1, 10-phenanthroline in blue-red organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Lin Jian [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Xia, Yi-Jie [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Tang Chao [Institute of Advanced Materials, Nanjing University of Posts and Telecommunications (NUPT), 66 XinMoFan Road, Nanjing 210003 (China); Yin Kun [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Zhong Gaoyu [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Ni Gang [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Peng Bo [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Hou Xiaoyuan [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Gan Fuxi [Institute of Advanced Materials, Fudan University, Shanghai 200433 (China); Huang Wei [Institute of Advanced Materials, Nanjing University of Posts and Telecommunications (NUPT), 66 XinMoFan Road, Nanjing 210003 (China)

    2007-08-07

    This paper reports the fabrication and measurement of organic light-emitting devices comprised of indium-tin-oxide (ITO)/4,4',4-prime-tris(N-carbazolyl)-triphenylamine (TCTA, 8 nm)/2-pyrenyl-9-phenyl-9-pyrenylfluorene(2P9PPF, 30 nm)/ bathocuproine (BCP, with different thickness)/Alq{sub 3} : DCJTB (DCJTB = 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7- tetramethyljulolidyl-9-enyl)-4H-pyran, Alq{sub 3} = tris(8-hydroxyquinolino) aluminium(III), 2% in mass ratio, 30 nm)/Mg : Ag(250 nm). The dependence of electroluminescence (EL) spectra on the BCP layer thickness and operating voltage has been investigated quantitatively. It is shown that the emission colour of the devices changes from red to blue at 8 V when the BCP layer thickness changes from 1 to 10 nm. The emission colour of the devices also varies with the applying voltage even in a given device. The ratio of blue emission originating from 2P9PPF to the red emission originating from DCJTB increases with the applying voltage. Based on the hole blocking effect of the BCP layer, we deduced the dependence of this ratio on the BCP layer thickness and simulated the experimental result well. It is also proposed that the variation of the EL spectrum with the voltage can be attributed to the varying hole blocking effect under the varying electric field, which resulted in a recombination zone shift, and the exciton dissociation effect in the electric field.

  1. Pulsed Electrical Spin Injection into InGaAs Quantum Dots: Studies of the Electroluminescence Polarization Dynamics

    International Nuclear Information System (INIS)

    Asshoff, P.; Loeffler, W.; Fluegge, H.; Zimmer, J.; Mueller, J.; Westenfelder, B.; Hu, D. Z.; Schaadt, D. M.; Kalt, H.; Hetterich, M.

    2010-01-01

    We present time-resolved studies of the spin polarization dynamics during and after initialization through pulsed electrical spin injection into InGaAs quantum dots embedded in a p-i-n-type spin-injection light-emitting diode. Experiments are performed with pulse widths in the nanosecond range and a time-resolved single photon counting setup is used to detect the subsequent electroluminescence. We find evidence that the achieved spin polarization shows an unexpected temporal behavior, attributed mainly to many-carrier and non-equilibrium effects in the device.

  2. Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode

    International Nuclear Information System (INIS)

    Deng, R.; Yao, B.; Li, Y.F.; Xu, Y.; Li, J.C.; Li, B.H.; Zhang, Z.Z.; Zhang, L.G.; Zhao, H.F.; Shen, D.Z.

    2013-01-01

    The n-ZnO/p-NiO heterojunction was prepared by depositing a p-type NiO film on a c-plane sapphire by rf magnetron sputtering and then growing a n-type ZnO film on the NiO film by plasma-assisted molecular beam epitaxy. The heterojunction shows a diode-like rectification characteristic with a turn-on voltage of ∼3.6 V and emits UV light upon putting a forward bias. The intensity of the UV emission increases as injection current increases from 0.5 to 3.5 mA, but the wavelength of the UV emission decreases from 404 to 387 nm. It is demonstrated that the UV emission comes from near band-edge radiative recombination of electron and hole in the ZnO layer. The mechanism of the UV electroluminescence is discussed in the present work. - Highlights: ► The n-ZnO/p-NiO heterojunction was prepared by rf magnetron sputtering. ► The heterojunction shows a diode-like rectification characteristic with a turn-on voltage of ∼3.6 V. ► The heterojunction realizes UV EL emission with wavelength of 387 nm at the injection current of 3.5 mA.

  3. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  4. Probing the Energy Level Alignment and the Correlation with Open-Circuit Voltage in Solution-Processed Polymeric Bulk Heterojunction Photovoltaic Devices.

    Science.gov (United States)

    Yang, Qing-Dan; Li, Ho-Wa; Cheng, Yuanhang; Guan, Zhiqiang; Liu, Taili; Ng, Tsz-Wai; Lee, Chun-Sing; Tsang, Sai-Wing

    2016-03-23

    Energy level alignment at the organic donor and acceptor interface is a key to determine the photovoltaic performance in organic solar cells, but direct probing of such energy alignment is still challenging especially for solution-processed bulk heterojunction (BHJ) thin films. Here we report a systematic investigation on probing the energy level alignment with different approaches in five commonly used polymer:[6,6]-phenyl-C71-butyric acid methyl ester (PCBM) BHJ systems. We find that by tuning the weight ratio of polymer to PCBM the electronic features from both polymer and PCBM can be obtained by photoemission spectroscopy. Using this approach, we find that some of the BHJ blends simply follow vacuum level alignment, but others show strong energy level shifting as a result of Fermi level pinning. Independently, by measuring the temperature-dependent open-circuit voltage (VOC), we find that the effective energy gap (Eeff), the energy difference between the highest occupied molecular orbital of the polymer donor (EHOMO-D) and lowest unoccupied molecular orbital of the PCBM acceptor (ELUMO-A), obtained by photoemission spectroscopy in all polymer:PCBM blends has an excellent agreement with the extrapolated VOC at 0 K. Consequently, the photovoltage loss of various organic BHJ photovoltaic devices at room temperature is in a range of 0.3-0.6 V. It is believed that the demonstrated direct measurement approach of the energy level alignment in solution-processed organic BHJ will bring deeper insight into the origin of the VOC and the corresponding photovoltage loss mechanism in organic photovoltaic cells.

  5. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  6. Study of structural, morphological, optical and electroluminescent properties of undoped ZnO nanorods grown by a simple chemical precipitation

    Directory of Open Access Journals (Sweden)

    Singh A.

    2015-12-01

    Full Text Available In this work, zinc oxide (ZnO nanorods were obtained by a simple chemical precipitation method in the presence of capping agent: polyvinyl pyrrolidone (PVP at room temperature. X-ray diffraction (XRD result indicates that the synthesized undoped ZnO nanorods have hexagonal wurtzite structure without any impurities. It has been observed that the growth direction of the prepared ZnO nanorods is [1 0 1]. XRD analysis revealed that the nanorods have the crystallite size of 49 nm. Crystallite size is calculated by Debye-Scherrer formula and lattice strain is calculated by Williomson-Hall equation. Cell volume, Lorentz factor, Lorentz polarization factor, bond length, texture coefficient, lattice constants and dislocation density have also been studied. We also compared the interplanar spacings and relative peak intensities with their standard values at different angles. The scanning electron microscope (SEM images confirmed the size and shape of these nanorods. It has been found that the diameter of the nanorods ranges from 1.52 μm to 1.61 μm and the length is about 4.89 μm. It has also been observed that at room temperature ultraviolet visible (UV-Vis absorption band is around 355 nm (blue shifted as compared to the bulk. The average particle size has also been calculated by mathematical model of effective mass approximation equation, using UV-Vis absorption peak. Finally, the bandgap has been calculated using UV-absorption peak. Electroluminescence (EL studies show that emission of light is possible at very small threshold voltage and it increases rapidly with increasing applied voltage. It is seen that smaller ZnO nanoparticles give higher electroluminescence brightness starting at lower threshold voltage. The brightness is also affected by increasing the frequency of AC signal.

  7. Electroluminescence of organic light-emitting diodes with an ultra-thin layer of dopant

    Energy Technology Data Exchange (ETDEWEB)

    Li Weizhi [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Yu Junsheng [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: jsyu@uestc.edu.cn; Wang, Tao [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Jiang, Yadong [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: jiangyd@uestc.edu.cn; Wei, Bangxiong [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2008-03-15

    Conventional fluorescent dyes, i.e., 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB), 5,12-dihydro-5,12-dimethylquino [2,3-b]acridine-7,14-dione (DMQA) and 5,6,11,12-tetraphenylnaphthacene (Rubrene), were used to investigate the performance of organic light-emitting diodes (OLEDs) based on indium tin oxide (ITO)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB)/tris-(8-hydroxyquinolate)-aluminum (Alq{sub 3})/MgAg. The dyes were either inserted into devices as an ultra-thin film at the NPB/Alq{sub 3} interface by sequential evaporation, or doped into the Alq{sub 3} emission layer by co-evaporation with the doping ratio about 2%. Electroluminescence (EL) spectra of devices indicated that concentration quenching effect (CQE) of the dye-dopant was slightly bigger in the former than in the latter, while the degrees of CQE for three dopants are in the order of DMQA > DCJTB > Rubrene suggested by the difference in EL spectra and performances of devices. In addition, EL process of device with an ultra-thin layer of dopant is dominated by direct carrier trapping (DCT) process due to almost no holes recombine with electrons in Alq{sub 3}-host layer.

  8. Charge-pump voltage converter

    Science.gov (United States)

    Brainard, John P [Albuquerque, NM; Christenson, Todd R [Albuquerque, NM

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  9. Preparation and performance optimization of TPBISi green-light organic luminescent material devices

    Directory of Open Access Journals (Sweden)

    Zheng Huajing

    2017-01-01

    Full Text Available The Study analyzed and tested the absorption spectrum, photoluminescence spectrum, and device’s electroluminescence spectrum of a new silole material. The device with Silol as an emitting layer, emitted green-light whose structure is ITO/NPB/2,2,3,3-tetraphenyl-4,4-bisthienylsilole(TPBTSi/Alq3/Mg: A by improvement of preparation technology and optimization of thin film. It reaches the maximum luminescence of 11290.2 cd/m2, the maximum luminous efficiency of 0.84 lm/W, luminescence spectrum of 516 nm, chromaticity diagram CIE coordinate of(0.275, 0.4568 when voltage is 15V. All of the above is the green characteristic spectrum of TPBTSi.

  10. Controlling charge injection in organic electronic devices using self-assembled monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Campbell, I.H.; Kress, J.D.; Martin, R.L.; Smith, D.L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Barashkov, N.N.; Ferraris, J.P. [The University of Texas at Dallas, Richardson, Texas 75083 (United States)

    1997-12-01

    We demonstrate control and improvement of charge injection in organic electronic devices by utilizing self-assembled monolayers (SAMs) to manipulate the Schottky energy barrier between a metal electrode and the organic electronic material. Hole injection from Cu electrodes into the electroluminescent conjugated polymer poly[2-methoxy,5-(2{sup {prime}}-ethyl-hexyloxy)-1,4-phenylene vinylene] was varied by using two conjugated-thiol based SAMs. The chemically modified electrodes were incorporated in organic diode structures and changes in the metal/polymer Schottky energy barriers and current{endash}voltage characteristics were measured. Decreasing (increasing) the Schottky energy barrier improves (degrades) charge injection into the polymer. {copyright} {ital 1997 American Institute of Physics.}

  11. A High-Voltage Low-Power Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices for LED Drivers

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2018-01-01

    Previous research on switched-capacitor DC-DC converters has focused on low-voltage and/or high-power ranges where the efficiencies are dominated by conduction loss. Switched-capacitor DC-DC converters at high-voltage (> 100 V) low-power (high efficiency and high power density...... are anticipated to emerge. This paper presents a switched-capacitor converter with an input voltage up to 380 V (compatible with rectified European mains) and a maximum output power of 10 W. GaN switches and SiC diodes are analytically compared and actively combined to properly address the challenges at high......-voltage low-current levels, where switching loss becomes significant. Further trade-off between conduction loss and switching loss is experimentally optimized with switching frequencies. Three variant designs of the proposed converter are implemented, and the trade-off between the efficiency and the power...

  12. Color tunable electroluminescence and resistance switching from a ZnO-nanorod–TaO_x–p-GaN heterojunction

    International Nuclear Information System (INIS)

    Zhao, J L; Teo, K L; Zheng, K; Sun, X W

    2016-01-01

    Well-aligned ZnO nanorods have been prepared on p-GaN–sapphire using a vapor phase transport (VPT) technique. A thin sputtered layer of TaO_x is employed as the intermediate layer and an n-ZnO–TaO_x–p-GaN heterojunction device has been achieved. The current transport of the heterojunction exhibited a typical resistance switching behavior, which originated from the filament forming and breaking in the TaO_x layer. Color controllable electroluminescence (EL) was observed from the biased heterojunction at room temperature. Bluish-white wide band emission is achieved from the forward biased device in both the high resistance and low resistance states, while red emission can only be observed for the reverse biased device in the low resistance state. The correlation between the EL and resistance switching has been analyzed in-depth based on the interface band diagram of the heterojunction. (paper)

  13. Structural effects of a light emitting copolymer having perylene moieties in the side chain on the electroluminescent characteristics

    International Nuclear Information System (INIS)

    Lee, Chang Ho; Ryu, Seung Hoon; Jang, Hee Dong; Oh, Se Young

    2004-01-01

    We have synthesized a novel side chain light emitting copolymer. The side chain light emitting copolymer has a perylene moiety as an emitting unit and methylmethacrylate (MMA) as a spacer to decrease the concentration quenching of light emitting site in the polymer intrachain. These polymers are very soluble in most organic solvents such as monochlorobenzene, tetrahydrofuran, chloroform and benzene. The single-layered electroluminescent (EL) device consisting of ITO/carrier transporting copolymer and light emitting copolymer/Al was manufactured. The carrier transporting copolymer has triphenylamine moiety as a hole transporting unit and triazine moiety as an electron transporting unit in the polymer side chain. This device exhibits maximum external quantum efficiency when the MMA contents of light emitting copolymer is 30 wt.%. In particular, the device emits more blue light as MMA contents increase

  14. Design and development of low-power driven hybrid electroluminescent lamp from carbon nanotube embedded phosphor material

    International Nuclear Information System (INIS)

    Yadav, Deepika; Mishra, Savvi; Shanker, Virendra; Haranath, D.

    2013-01-01

    Highlights: •We are first to report CNT embedded ZnS:Mn hybrid EL system. •Achieved efficient orange-red EL emission at low operating voltages ( AC ). •Facile technique to induce conductive paths inside the ZnS particle to trigger EL. •Detailed electrical characterization of EL lamp is presented. -- Abstract: We present a novel methodology to design a hybrid electroluminescent (EL) lamp by embedding carbon nanotubes (CNTs) inside the ZnS:Mn phosphor particles by conventional solid state diffusion technique. By doing so, the phosphor particles exhibited increase in EL brightness and efficiency at low operating voltages ( AC ). Interestingly, shorter the length of CNTs used, greater was the field enhancement effect and lower was the operating voltages to glow the EL lamps. The role of CNTs have been identified to form conductive paths inside the ZnS particle thereby triggering EL due to electron injection to luminescent centers (Mn 2+ ) at nominal voltages. In addition, a detailed electrical characterization of the novel EL lamp along with its spectral energy distribution studies are presented

  15. Electroluminescence of a-Si/c-Si heterojunction solar cells after high energy irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ferrara, Manuela

    2009-11-24

    The crystalline silicon as absorber material will certainly continue to dominate the market for space applications of solar cells. In the contribution under consideration the applicability of a-Si:H/c-Si heterojunction solar cells in space has been tested by the investigation of the cell modification by high energy protons and comparing the results to the degradation of homojunction crystalline silicon reference cells. The investigated solar cells have been irradiated with protons of different energies and doses. For all investigated solar cells the maximum damage happens for an energy of about 1.7 MeV and is mainly due to the decrease of the effective minority carrier diffusion length in the crystalline silicon absorber. Simulations carried out by AFORS-HET, a heterojunction simulation program, also confirmed this result. The main degradation mechanism for all types of devices is the monotonically decreasing charge carrier diffusion length in the p-type monocrystalline silicon absorber layer. For the heterojunction solar cell an enhancement of the photocurrent in the blue wavelength region has been observed but only in the case of heterojunction solar cell with intrinsic a-Si:H buffer layer. Additionally to the traditional characterization techniques the electroluminescence technique used for monitoring the modifications of the heteroluminescence technique used for monitoring the modifications of the heterointerface between amorphous silicon and crystalline silicon in solar cells after proton irradiation. A direct relation between minority carrier diffusion length and electroluminescence quantum efficiency has been observed but also details of the interface modification could be monitored by this technique.

  16. Ion funnel device

    Energy Technology Data Exchange (ETDEWEB)

    Ibrahim, Yehia M.; Chen, Tsung-Chi; Harrer, Marques B.; Tang, Keqi; Smith, Richard D.

    2017-11-21

    An ion funnel device is disclosed. A first pair of electrodes is positioned in a first direction. A second pair of electrodes is positioned in a second direction. The device includes an RF voltage source and a DC voltage source. A RF voltage with a superimposed DC voltage gradient is applied to the first pair of electrodes, and a DC voltage gradient is applied to the second pair of electrodes.

  17. Synthesis and electroluminescent properties of blue emitting materials based on arylamine-substituted diphenylvinylbiphenyl derivatives for organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kum Hee; You, Jae Nam; Won, Jiyeon; Lee, Jin Yong [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Seo, Ji Hoon [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Kim, Young Kwan, E-mail: kimyk@hongik.ac.kr [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of)

    2011-10-31

    This paper reports the synthesis and electroluminescent properties of a series of blue emitting materials with arylamine and diphenylvinylbiphenyl groups for applications to efficient blue organic light-emitting diodes (OLEDs). All devices exhibited blue electroluminescence with electroluminescent properties that were quite sensitive to the structural features of the dopants in the emitting layers. In particular, the device using dopant 4 exhibited sky-blue emission with a maximum luminance, luminance efficiency, power efficiency, external quantum efficiency and CIE coordinates of 39,000 cd/m{sup 2}, 12.3 cd/A, 7.45 lm/W, 7.71% at 20 mA/cm{sup 2} and (x = 0.17, y = 0.31) at 8 V, respectively. In addition, a blue OLED using dopant 2 with CIE coordinates (x = 0.16, y = 0.18) at 8 V exhibited a luminous efficiency, power efficiency and external quantum efficiency of 4.39 cd/A, 2.46 lm/W and 2.97% at 20 mA/cm{sup 2}, respectively.

  18. Low-voltage gyrotrons

    International Nuclear Information System (INIS)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-01-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5–10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%–2% in the submillimeter wavelength region).

  19. Hole-exciton interaction induced high field decay of magneto-electroluminescence in Alq{sub 3}-based organic light-emitting diodes at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Tingting; Holford, D. F.; Gu, Hang; Kreouzis, T. [Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom); Zhang, Sijie, E-mail: Sijie.zhang@scu.edu.cn, E-mail: w.gillin@qmul.ac.uk [College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China); Gillin, W. P., E-mail: Sijie.zhang@scu.edu.cn, E-mail: w.gillin@qmul.ac.uk [Materials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom); College of Physical Science and Technology, Sichuan University, Chengdu 610064 (China)

    2016-01-11

    The magnetic field effects on the electroluminescence of aluminium tris-(8-hydroxyqinoline) (Alq{sub 3}) based organic light emitting diodes have been investigated by varying the electron/hole ratio in the emissive layer. Experimental results reveal that a negative high field effect in the magneto-electroluminescence (MEL) can be found in devices with very low triplet exciton concentration at room temperature. This suggests triplet-triplet annihilation cannot be used to explain the negative high field MEL in the Alq{sub 3} system. Our results suggest that hole-exciton interaction may be the origin of the negative high field MEL and also, in parallel with this interaction, there is also the more common positive high field process occurring which has been tentatively attributed to electron-exciton interactions. The competition between these different processes decides the final shape of the MEL at high fields.

  20. Hole-exciton interaction induced high field decay of magneto-electroluminescence in Alq3-based organic light-emitting diodes at room temperature

    Science.gov (United States)

    Zhang, Tingting; Holford, D. F.; Gu, Hang; Kreouzis, T.; Zhang, Sijie; Gillin, W. P.

    2016-01-01

    The magnetic field effects on the electroluminescence of aluminium tris-(8-hydroxyqinoline) (Alq3) based organic light emitting diodes have been investigated by varying the electron/hole ratio in the emissive layer. Experimental results reveal that a negative high field effect in the magneto-electroluminescence (MEL) can be found in devices with very low triplet exciton concentration at room temperature. This suggests triplet-triplet annihilation cannot be used to explain the negative high field MEL in the Alq3 system. Our results suggest that hole-exciton interaction may be the origin of the negative high field MEL and also, in parallel with this interaction, there is also the more common positive high field process occurring which has been tentatively attributed to electron-exciton interactions. The competition between these different processes decides the final shape of the MEL at high fields.

  1. Carrier Injection and Transport in Blue Phosphorescent Organic Light-Emitting Device with Oxadiazole Host

    Directory of Open Access Journals (Sweden)

    Tien-Lung Chiu

    2012-06-01

    Full Text Available In this paper, we investigate the carrier injection and transport characteristics in iridium(IIIbis[4,6-(di-fluorophenyl-pyridinato-N,C2']picolinate (FIrpic doped phosphorescent organic light-emitting devices (OLEDs with oxadiazole (OXD as the bipolar host material of the emitting layer (EML. When doping Firpic inside the OXD, the driving voltage of OLEDs greatly decreases because FIrpic dopants facilitate electron injection and electron transport from the electron-transporting layer (ETL into the EML. With increasing dopant concentration, the recombination zone shifts toward the anode side, analyzed with electroluminescence (EL spectra. Besides, EL redshifts were also observed with increasing driving voltage, which means the electron mobility is more sensitive to the electric field than the hole mobility. To further investigate carrier injection and transport characteristics, FIrpic was intentionally undoped at different positions inside the EML. When FIrpic was undoped close to the ETL, driving voltage increased significantly which proves the dopant-assisted-electron-injection characteristic in this OLED. When the undoped layer is near the electron blocking layer, the driving voltage is only slightly increased, but the current efficiency is greatly reduced because the main recombination zone was undoped. However, non-negligible FIrpic emission is still observed which means the recombination zone penetrates inside the EML due to certain hole-transporting characteristics of the OXD.

  2. Coordination compounds of rare-earth metals with organic ligands for electroluminescent diodes

    International Nuclear Information System (INIS)

    Katkova, M A; Bochkarev, Mikhail N; Vitukhnovsky, Alexey G

    2005-01-01

    Data on lanthanide coordination compounds with organic ligands used in the design of electroluminescent diodes are summarised and systematically represented. The molecular and electronic structures and spectroscopic characteristics of these compounds are considered. A comparative analysis of the properties of organic electroluminescent diodes with different compositions of emitting and conductive layers is presented.

  3. Synthesis and electroluminescence properties of europium (III) complexes with new second ligands

    International Nuclear Information System (INIS)

    Liu Ze; Wen Fushan; Li Wenlian

    2005-01-01

    Two novel second ligands, 9,9-Di-(4-methoxyphenyl)-9-H-4,5-' (OMe-Spiro-DF) and 9,9-Di-(2-(4-(4-butyloxy)phenyl)-5-phenyl-1,3,4-oxadiazolyl)-phenyl-9-H-4, 5-Diazafluorene (OXD-Spiro-DF), were successfully prepared. Europium complexes, Eu(DBM) 3 (OMe-Spiro-DF) and Eu(DBM) 3 (OXD-Spiro-DF) (DBM=dibenzolylmethane) based on the two ligands were designed and synthesized. For a double-layer device with configuration of indium tin oxide (ITO)/N, N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD)/Eu(DBM) 3 (OXD-Spiro-DF) or Eu(DBM) 3 (OMe-Spiro-DF)/Mg/Ag, compared with the device based on complex Eu(DBM) 3 (OMe-Spiro-DF), the brightness and electroluminescent (EL) efficiency of device based on complex Eu(DBM) 3 (OXD-Spiro-DF) with oxadiazole-functionalized ligand OXD-Spiro-DF are significantly improved due to the improvement of electron-transporting ability. A maximum brightness of 154 cd/m 2 was obtained at 17 V in the complex Eu(DBM) 3 (OXD-Spiro-DF), about four times brighter than the corresponding complex Eu(DBM) 3 (OMe-Spiro-DF)

  4. Study on electroluminescence processes in dye-doped organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Li Weizhi [State Key Laboratory of Electronic Thin Films and Integrated devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: leewz@uestc.edu.cn; Jiang Yadong; Wang Tao [State Key Laboratory of Electronic Thin Films and Integrated devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2008-07-15

    Electroluminescence (EL) mechanism of dye-doped organic light-emitting diodes (OLEDs) was investigated by using three familiar fluorescent dyes, i.e., 5,12-Dihydro-5,12-dimethylquino [2,3-b]acridine-7,14-dione (DMQA), 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran(DCJTB), and 5,6,11,12-tetraphenylnaphthacene (Rubrene). EL spectra of the doped devices with structure of indium tin oxide (ITO)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'- diamine (NPB) (40 nm)/tris-(8-hydroxyquinolate)-aluminum (Alq{sub 3}) (x nm, x=0-40 nm)/dye: Alq{sub 3} (weight ratio{approx}1%, 2 nm)/Alq{sub 3} (48-x nm)/MgAg indicated that direct carrier trapping (DCT) process dominated light emission of devices. As a result, investigation of carrier-recombination site via doping, which is conventionally applied in OLEDs, is questionable since the doping site and the dopant itself may significantly influence the carrier-recombination process in the doped devices.

  5. The synthesis and study of new electroluminescent materials

    International Nuclear Information System (INIS)

    Pillow, J.

    1998-01-01

    Dendrimers offer many potential advantages over other organic electroluminescent materials that have been developed for use in light emitting diodes. This thesis describes the preparation of new electroluminescent dendrimers that consist of a luminescent core, charge-transporting stilbene dendrons and solubilising t-butyl surface groups. Choosing the core to have a longer conjugation length than the dendrons establishes an energy gradient that ensures that light emission occurs from the dendrimer core. Two convergent syntheses were developed for the preparation of dendrons that had aldehyde, bromide and styryl focal groups. The Heck reaction between styrene focused dendrons and 3,5-dibromoaryls was used to increase the dendron generation. This reaction was then alternated with the Wittig or Stille reactions in an iterative cycle to prepare dendrons of up to the third generation. The luminescent cores were chosen to be 1,4-distyrylbenzene, 1,4-distyrylanthracene and meso-tetraaryl porphyrin to emit blue, green and red light respectively. Dendrimers up to the third generation were prepared containing these cores. Further control over the emission colour was demonstrated by the chelation of metals into the porphyrin core. Computer modelling was used to predict the conformations of the dendrimers, with confirmation provided by GPC and X-ray crystallography. The modelled structures were then used to interpret the photoluminescence and electroluminescence spectra. Electrochemical analyses allowed the comparison of the HOMO and LUMO energy levels with the Fermi levels of the metal electrodes, which was used to explain the behaviour of the dendrimers in single layer light-emitting diodes. (author)

  6. Synthesis and Electroluminescent Properties of Julolidine-π-Juloidine Type Materials with the Bulky Adamantane Groups

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kum Hee; Yoon, Seung Soo [Sungkyunkwan Univ., Suwon (Korea, Republic of); Lee, Seok Jae; Kim, Young Kwan [Hongik Univ., Seoul (Korea, Republic of)

    2012-11-15

    A main problem of red emitting material, which contributes to their low EL performances, is the concentration quenching due to the effective self aggregation and the consequent formation of excimers. To avoid this drawback and thus improve the EL properties of red fluorescent OLED devices, many synthetic efforts have been conducted to develop new emitting materials with the structural motifs to suppress self-aggregation by the weakening intermolecular attractive interactions. Particularly, the introduction of bulky moieties in the emitters would provide the steric hindrance between emitting materials in solid state devices and thus reduce the self-aggregation. Nevertheless, EL performances of red materials still need to be improved for the practical applications. In conclusion, we designed and synthesized three julolidine-π-juloidine type emitting materials (1-3) with the bulky adamantane groups. To study their electroluminescent properties, the multilayered OLED devices with the structure of ITO/NPB (40 nm)/ADN : 1-3 (x%) (20 nm)/Alq{sub 3} (40 nm)/Liq (2 nm)/Al were fabricated. All devices using emitters 1-3 showed the efficient emissions, in which their EL performances depend on the structure of emitters sensitively. Particularly, a device using emitter 3 exhibited the efficient orange-red emission with the luminous and power efficiencies of 4.79 cd/A and 1.76 lm/W at 20 mA/cm{sup 2}, respectively. The CIE coordinates of this device was (0.57, 0.42) at 7.0 V.

  7. Electroluminescence and electrical degradation of insulating polymers at electrode interfaces under divergent fields

    Science.gov (United States)

    Zhang, Shuai; Li, Qi; Hu, Jun; Zhang, Bo; He, Jinliang

    2018-04-01

    Electrical degradation of insulating polymers at electrode interfaces is an essential factor in determining long-term reliability. A critical challenge is that the exact mechanism of degradation is not fully understood, either experimentally or theoretically, due to the inherent complex processes. Consequently, in this study, we investigate electroluminescence (EL) at the interface of an electrode and insulator, and determine the relationship between EL and electrical degradation. Using a tip-plate electrode structure, the unique features of EL under a highly divergent field are investigated. The voltage type (alternating or direct current), the polymer matrix, and the time of pressing are also investigated separately. A study of EL from insulators under a divergent field is provided, and the relationship between EL spectra and degradation is discussed. It is shown that EL spectra under a divergent field have unique characteristics compared with EL spectra from polymer films under a uniform field and the most obvious one is the UV emission. The results obtained in the current investigation bring us a step closer to understanding the process of electrical degradation and provide a potential way to diagnose insulator defects.

  8. Investigations on electroluminescent tapes and foils in relation to their applications in automotive

    Science.gov (United States)

    Plotog, Ioan

    2015-02-01

    The electroluminescent (EL) tapes or foils having barrier films for an additional level of protection against the toughest environments conditions, offer a large area of applications. The EL lights, due to their characteristics, began to be used not only in the entertainment industry, but also for automotive and aerospace applications. In the paper, the investigations regarding EL foils technical performances in relation to their applications as light sources in automotive ambient light were presented. The experiments were designed based on the results of EL foils electrical properties previous investigations done in laboratory conditions, taking into account the range of automotive ambient temperatures for sinusoidal alternative supply voltage. The measurements for different temperatures were done by keeping the EL foils into electronic controlled oven that ensures the dark enclosure offering conditions to use a lux-meter in order to measure and maintain under control light emission intensity. The experiments results define the EL foils characteristics as load in automotive ambient temperatures condition, assuring so the data for optimal design of a dedicated inverter.

  9. Dispenser printed electroluminescent lamps on textiles for smart fabric applications

    Science.gov (United States)

    de Vos, Marc; Torah, Russel; Tudor, John

    2016-04-01

    Flexible electroluminescent (EL) lamps are fabricated onto woven textiles using a novel dispenser printing process. Dispenser printing utilizes pressurized air to deposit ink onto a substrate through a syringe and nozzle. This work demonstrates the first use of this technology to fabricate EL lamps. The luminance of the dispenser printed EL lamps is compared to screen-printed EL lamps, both printed on textile, and also commercial EL lamps on polyurethane film. The dispenser printed lamps are shown to have a 1.5 times higher luminance than the best performing commercially available lamp, and have a comparable performance to the screen-printed lamps.

  10. Dispenser printed electroluminescent lamps on textiles for smart fabric applications

    International Nuclear Information System (INIS)

    De Vos, Marc; Torah, Russel; Tudor, John

    2016-01-01

    Flexible electroluminescent (EL) lamps are fabricated onto woven textiles using a novel dispenser printing process. Dispenser printing utilizes pressurized air to deposit ink onto a substrate through a syringe and nozzle. This work demonstrates the first use of this technology to fabricate EL lamps. The luminance of the dispenser printed EL lamps is compared to screen-printed EL lamps, both printed on textile, and also commercial EL lamps on polyurethane film. The dispenser printed lamps are shown to have a 1.5 times higher luminance than the best performing commercially available lamp, and have a comparable performance to the screen-printed lamps. (paper)

  11. Recombination in polymer:Fullerene solar cells with open-circuit voltages approaching and exceeding 1.0 V

    KAUST Repository

    Hoke, Eric T.

    2012-09-14

    Polymer:fullerene solar cells are demonstrated with power conversion efficiencies over 7% with blends of PBDTTPD and PC 61 BM. These devices achieve open-circuit voltages ( V oc ) of 0.945 V and internal quantum efficiencies of 88%, making them an ideal candidate for the large bandgap junction in tandem solar cells. V oc \\'s above 1.0 V are obtained when the polymer is blended with multiadduct fullerenes; however, the photocurrent and fill factor are greatly reduced. In PBDTTPD blends with multiadduct fullerene ICBA, fullerene emission is observed in the photoluminescence and electroluminescence spectra, indicating that excitons are recombining on ICBA. Voltage-dependent, steady state and time-resolved photoluminescence measurements indicate that energy transfer occurs from PBDTTPD to ICBA and that back hole transfer from ICBA to PBDTTPD is inefficient. By analyzing the absorption and emission spectra from fullerene and charge transfer excitons, we estimate a driving free energy of -0.14 ± 0.06 eV is required for efficient hole transfer. These results suggest that the driving force for hole transfer may be too small for efficient current generation in polymer:fullerene solar cells with V oc values above 1.0 V and that non-fullerene acceptor materials with large optical gaps ( > 1.7 eV) may be required to achieve both near unity internal quantum efficiencies and values of V oc exceeding 1.0 V. © 2013 WILEY-VCH Verlag GmbH and Co.

  12. Recombination in polymer:Fullerene solar cells with open-circuit voltages approaching and exceeding 1.0 V

    KAUST Repository

    Hoke, Eric T.; Vandewal, Koen; Bartelt, Jonathan A.; Mateker, William R.; Douglas, Jessica D.; Noriega, Rodrigo; Graham, Kenneth; Frechet, Jean; Salleo, Alberto; McGehee, Michael D.

    2012-01-01

    Polymer:fullerene solar cells are demonstrated with power conversion efficiencies over 7% with blends of PBDTTPD and PC 61 BM. These devices achieve open-circuit voltages ( V oc ) of 0.945 V and internal quantum efficiencies of 88%, making them an ideal candidate for the large bandgap junction in tandem solar cells. V oc 's above 1.0 V are obtained when the polymer is blended with multiadduct fullerenes; however, the photocurrent and fill factor are greatly reduced. In PBDTTPD blends with multiadduct fullerene ICBA, fullerene emission is observed in the photoluminescence and electroluminescence spectra, indicating that excitons are recombining on ICBA. Voltage-dependent, steady state and time-resolved photoluminescence measurements indicate that energy transfer occurs from PBDTTPD to ICBA and that back hole transfer from ICBA to PBDTTPD is inefficient. By analyzing the absorption and emission spectra from fullerene and charge transfer excitons, we estimate a driving free energy of -0.14 ± 0.06 eV is required for efficient hole transfer. These results suggest that the driving force for hole transfer may be too small for efficient current generation in polymer:fullerene solar cells with V oc values above 1.0 V and that non-fullerene acceptor materials with large optical gaps ( > 1.7 eV) may be required to achieve both near unity internal quantum efficiencies and values of V oc exceeding 1.0 V. © 2013 WILEY-VCH Verlag GmbH and Co.

  13. Encapsulation methods and dielectric layers for organic electrical devices

    Science.gov (United States)

    Blum, Yigal D; Chu, William Siu-Keung; MacQueen, David Brent; Shi, Yijan

    2013-07-02

    The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.

  14. Electrochemical synthesis of MoS2 quantum dots embedded nanostructured porous silicon with enhanced electroluminescence property

    Science.gov (United States)

    Shrivastava, Megha; Kumari, Reeta; Parra, Mohammad Ramzan; Pandey, Padmini; Siddiqui, Hafsa; Haque, Fozia Z.

    2017-11-01

    In this report we present the successful enhancement in electroluminescence (EL) in nanostructured n-type porous silicon (PS) with an idea of embedding luminophorous Molybdenum disulfide (MoS2) quantum dots (QD's). Electrochemical anodization technique was used for the formation of PS surface and MoS2 QD's were prepared using the electrochemical route. Spin coating technique was employed for the proper incorporation of MoS2 QD's within the PS nanostructures. The crystallographic analysis was performed using X-ray diffraction (XRD), Raman and Fourier transform infrared (FT-IR) spectroscopy techniques. However, surface morphology was determined using Transmission electron microscopy (TEM) and Atomic force microscopy (AFM). The optical measurements were performed on photoluminescence (PL) spectrophotometer; additionally for electroluminescence (EL) study special arrangement of instrumental setup was made at laboratory level which provides novelty to this work. A diode prototype was made comprising Ag/MoS2:PS/Silicon/Ag for EL study. The MoS2:PS shows a remarkable concentration dependent enhancement in PL as well as in EL intensities, which paves a way to better utilize this strategy in optoelectronic device applications.

  15. Synthesis and electroluminescent properties of anthracene derivatives containing electron-withdrawing oxide moieties

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Jhin-yeong; Na, Eun Jae; Park, Soo Na [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of); Lee, Seok Jae [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Kim, Young Kwan, E-mail: kimyk@wow.hongik.ac.kr [Department of Information Display, Hongik University, Seoul, 121-791 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon, 440-746 (Korea, Republic of)

    2014-10-15

    Highlights: • Blue fluorescent material is important for application in full-color displays. • We have synthesized emitters based on anthracene connected with oxide moieties. • 1C shows a highly efficient blue EL emission due to electron-injection property. - Abstract: A series of new blue-emitting materials: (4-(10-(naphthalen-2-yl)anthracen-9-yl)phenyl)(phenyl)methanone (1); 9-(naphthalen-2-yl)-10-(4-((diphenyl)phosphine oxide)phenyl)anthracene (2); 9-(naphthalen-2-yl)-10-(4-(phenylsulfonyl)phenyl)anthracene (3) were designed and synthesized via Suzuki cross-coupling reaction. Multilayer OLEDs were fabricated in the following sequence: ITO (180 nm)/NPB (50 nm)/blue materials 1–3 (30 nm)/TPBi (15 nm)/Liq (2 nm)/Al (100 nm). All devices showed the efficient blue EL emissions. In particular, the device using 1 as an emitter exhibited efficient blue electroluminescent properties with a maximum luminous, power, external quantum efficiency and CIE coordinates of 0.36 cd/A, 0.90 lm/W, 0.55% at 20 mA/cm{sup 2} and (x = 0.16, y = 0.20) at 10.0 V, respectively.

  16. Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes

    Science.gov (United States)

    Patrick Xiao, T.; Chen, Kaifeng; Santhanam, Parthiban; Fan, Shanhui; Yablonovitch, Eli

    2018-05-01

    Electroluminescence—the conversion of electrons to photons in a light-emitting diode (LED)—can be used as a mechanism for refrigeration, provided that the LED has an exceptionally high quantum efficiency. We investigate the practical limits of present optoelectronic technology for cooling applications by optimizing a GaAs/GaInP double heterostructure LED. We develop a model of the design based on the physics of detailed balance and the methods of statistical ray optics, and predict an external luminescence efficiency of ηext = 97.7% at 263 K. To enhance the cooling coefficient of performance, we pair the refrigerated LED with a photovoltaic cell, which partially recovers the emitted optical energy as electricity. For applications near room temperature and moderate power densities (1.0-10 mW/cm2), we project that an electroluminescent refrigerator can operate with up to 1.7× the coefficient of performance of thermoelectric coolers with ZT = 1, using the material quality in existing GaAs devices. We also predict superior cooling efficiency for cryogenic applications relative to both thermoelectric and laser cooling. Large improvements to these results are possible with optoelectronic devices that asymptotically approach unity luminescence efficiency.

  17. Electroluminescent drift chamber with 16 μm spatial resolution

    International Nuclear Information System (INIS)

    Baskakov, V.I.; Dolgoshein, V.A.; Lebedenko, V.N.

    1978-01-01

    Studied are the characteristics of the dft electroluminscent chamber of an original design. For insuring high spatial resolution, the chamber has been filled with xenon to a pressure of 20 atm, which substantially decreases the electron diffusion during drift. Located at the end of the drift gap is an anode wire, 50 μm in dia. A strong electric field available near the thin wire causes electroluminescence of the electrons. The signal is localized within a small volume and contribution of the luminescence time in the total duration of a signal is small. In this case no electron multiplication occurs at all and, consequently, no space charge of positive ions takes place, which makes it possible to operate at very high loadings (2x10 6 particle/s). The characteristics of the chamber are measured in a beam of the Serpukhov accelerator. Use has been made of a model comprising two chambers, 5 mm thick, located successively along the beam with the effective area being 40x40 mm. The studies and analysis performed reveal that the drift electroluminescent chamber operates reliably in the wide range of the working gas pressure at an intensity of the incident particles up to 10 5 particle/s. The best resolution is obtained at a pressure of 20 atm and it equals 16 μm

  18. The effect of the variable frequency drive of the CNC roll grinding machine on the operation of other devices in low-voltage electrical installation

    Directory of Open Access Journals (Sweden)

    Simić Ninoslav

    2016-01-01

    Full Text Available This paper presents one of the observations that have been collected during the years of testing of electrical installations. A typical case from industrial plant in which are installed loads with variable frequency regulation is analyzed. We propose a simple way by measuring the frequency of the voltage in the objects, to establish the existence of possible irregularities in the operation of the individual units and analyze the influence of the current and voltage signal shape of one load to the work of other loads in the plant. The need for verification of electrical installations immediately upon receipt and installation of electrical equipment is emphasized and the use of the latest standards in the design and selection of equipment, in order to avoid unplanned expenses is recommended.

  19. Modeling of transient electroluminescence overshoot in bilayer organic light-emitting diodes using rate equations

    Energy Technology Data Exchange (ETDEWEB)

    Chandra, V.K. [Department of Electrical and Electronics Engineering, Chhatrapati Shivaji Institute of Technology, Shivaji Nagar, Kolihapuri, Durg 491001 (C.G.) (India); Chandra, B.P., E-mail: bpchandra4@yahoo.co.in [Department of Applied Physics, Ashoka Institute of Technology and Management, Rajnandgaon 491441 (C.G.) (India); Tiwari, M. [Department of Postgraduate Studies and Research in Physics and Electronics, Rani Durgavati University, Jabalpur 482001 (M.P.) (India); Baghel, R.N. [School of Studies in Physics and Astrophysics, Pt. Ravishankar Shukla University, Raipur 492010 (C.G.) (India); Ramrakhiani, M. [Department of Postgraduate Studies and Research in Physics and Electronics, Rani Durgavati University, Jabalpur 482001 (M.P.) (India)

    2012-06-15

    When a voltage pulse is applied under forward biased condition to a spin-coated bilayer organic light-emitting diode (OLED), then initially the electroluminescence (EL) intensity appearing after a delay time, increases with time and later on it attains a saturation value. At the end of the voltage pulse, the EL intensity decreases with time, attains a minimum intensity and then it again increases with time, attains a peak value and later on it decreases with time. For the OLEDs, in which the lifetime of trapped carriers is less than the decay time of the EL occurring prior to the onset of overshoot, the EL overshoot begins just after the end of voltage pulse. The overshoot in spin-coated bilayer OLEDs is caused by the presence of an interfacial layer of finite thickness between hole and electron transporting layers in which both transport molecules coexist, whereby the interfacial energy barrier impedes both hole and electron passage. When a voltage pulse is applied to a bilayer OLED, positive and negative space charges are established at the opposite faces of the interfacial layer. Subsequently, the charge recombination occurs with the incoming flux of injected carriers of opposite polarity. When the voltage is turned off, the interfacial charges recombine under the action of their mutual electric field. Thus, after switching off the external voltage the electrons stored in the interface next to the anode cell compartment experience an electric field directed from cathode to anode, and therefore, the electrons move towards the cathode, that is, towards the positive space charge, whereby electron-hole recombination gives rise to luminescence. The EL prior to onset of overshoot is caused by the movement of electrons in the electron transporting states, however, the EL in the overshoot region is caused by the movement of detrapped electrons. On the basis of the rate equations for the detrapping and recombination of charge carriers accumulated at the interface

  20. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  1. IE Information Notice No. 85-64: BBC Brown Boveri low-voltage K-line circuit breakers, with deficient overcurrent trip devices models OD-4 and 5

    International Nuclear Information System (INIS)

    Jordan, E.L.

    1992-01-01

    On May 13, 1985, BBC Brown Boveri Inc. (BBC) made a 10 CFR Part 21 report to the NRC concerning a deficiency in the Models OD-4 and OD-5 overcurrent trip devices installed on K-line circuit breakers. The affected breakers were manufactured by BBC from October 1983 to March 1985 and may have incorrect short time delay band levers (links) installed in electromechanical overcurrent trip device models OD-4 and OD-5. The incorrect link could limit the travel of the short time armature and cause the short time element to be inoperative in the maximum (MAX) band. The May 13, 1985, report recommended that all K-line circuit breakers with the OD-4 and OD-5 overcurrent trip devices and any spare OD-4 and OD-5 overcurrent trip devices that were manufactured between October 1983 and March 1985, be inspected for an incorrect short time delay band link. Licensees known by BBC to have purchased K-line breakers or spare OD-4 or OD-5 overcurrent trip devices were notified of the possible defect and instructions provided for their inspection. Enclosed is a list of utilities and related facilities that were notified by BBC. However, BBC advised the NRC that there is a possibility that other utilities could be using K-line circuit breakers with the suspect OD-4 and OD-5 overcurrent trip devices. Therefore, all licensees are being notified of this possible defect

  2. Power-MOSFET Voltage Regulator

    Science.gov (United States)

    Miller, W. N.; Gray, O. E.

    1982-01-01

    Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

  3. Design of control system parameters of voltage, current and timer on x-ray device mobile type IX 7-02 using personal computer

    International Nuclear Information System (INIS)

    Sujatno; Tatah Nurbarkah; Toto Trikasjono; Nugroho

    2013-01-01

    The control system has made a parameter X-ray machine mobile IX 7-02 using personal computers. The X-Ray or Roentgen apparatus is an equipment used for medical diagnosis. Before the X-Ray apparatus is operated, its parameter to be set are high voltage (kV), tube current (mA) and exposure time (s). The control system in a conventional X-Ray apparatus still use analog system. On the X-Ray manual operations resulted the value of velocity data that are less accurate, therefore it needs to be carried out a control system modifying using micro controller AT89S51 and the parameter value was setting through personal computer. In the limited voltage regulation to the movement of the stepper motor that drives the chain dimer, the result of testing obtained the value of angle stepper motors with an estimated value of voltage 50 kV, 60 kV, 70 kV, 80 kV, 90 kV and 100 kV respectively 164°, 182°, 200°, 218°, 236° and 258°. Current selection by 4 choices such as 50 mA, 60 mA, 70 mA and 80 mA can successfully activate the relay. The timing of exposure in the range of 0.01 to 1 second which is set through the microcontroller program can be realized as well. The X-ray can be operated with these results. (author)

  4. Ultraviolet electroluminescence from Au/MgO/MgxZn1−xO heterojunction diodes and the observation of Zn-rich cluster emission

    International Nuclear Information System (INIS)

    Liu, C.Y.; Xu, H.Y.; Sun, Y.; Zhang, C.; Ma, J.G.; Liu, Y.C.

    2014-01-01

    In this work, ultraviolet (UV) electroluminescence (EL) is achieved from Au/MgO/Mg x Zn 1−x O heterojunction diodes. The EL mechanism and laser forming process are discussed based on the energy band diagram, impact-ionization process and disordered optical structure. For ZnO and low Mg-content MgZnO devices, their EL spectra show single near-band-edge (NBE) emission. While in high Mg-content MgZnO devices, the emission from self-formed Zn-rich MgZnO clusters is observed and also contribute to the UV EL band. These Zn-rich clusters can act as thermally-stable luminescence centers, suggesting a promising route for developing MgZnO-based UV light-emitting devices. -- Highlights: • A series of Au/MgO/Mg x Zn 1−x O heterojunction diodes with multiple Mg compositions are fabricated and ultraviolet electroluminescence is achieved. • EL mechanism and laser forming process are discussed based on energy band diagram, impact-ionization process and disordered optical structure. • The transition from spontaneous to stimulated emission is observed in these heterojunctions, and the lasing mode is random laser. • In high Mg-content MgZnO devices, the emission from self-formed Zn-rich clusters is observed, which are thermally stable luminescence centers

  5. Electroluminescence from single-wall carbon nanotube network transistors.

    Science.gov (United States)

    Adam, E; Aguirre, C M; Marty, L; St-Antoine, B C; Meunier, F; Desjardins, P; Ménard, D; Martel, R

    2008-08-01

    The electroluminescence (EL) properties from single-wall carbon nanotube network field-effect transistors (NNFETs) and small bundle carbon nanotube field effect transistors (CNFETs) are studied using spectroscopy and imaging in the near-infrared (NIR). At room temperature, NNFETs produce broad (approximately 180 meV) and structured NIR spectra, while they are narrower (approximately 80 meV) for CNFETs. EL emission from NNFETs is located in the vicinity of the minority carrier injecting contact (drain) and the spectrum of the emission is red shifted with respect to the corresponding absorption spectrum. A phenomenological model based on a Fermi-Dirac distribution of carriers in the nanotube network reproduces the spectral features observed. This work supports bipolar (electron-hole) current recombination as the main mechanism of emission and highlights the drastic influence of carrier distribution on the optoelectronic properties of carbon nanotube films.

  6. Phosphorescent rhenium emitters based on two electron-withdrawing diamine ligands: Structure, characterization and electroluminescent performance

    Energy Technology Data Exchange (ETDEWEB)

    Rui, Mei, E-mail: meirui2015@163.com [College of Science, Hebei North University, Zhangjiakou 075000, Hebei (China); Yuhong, Wang [College of Science, Hebei North University, Zhangjiakou 075000, Hebei (China); Yinting, Wang; Na, Zhang [Communication Training Base of The Headquarters of The General Staff, Zhangjiakou 075100, Hebei (China)

    2014-09-15

    In this paper, two diamine ligands having electron-withdrawing oxadiazole group and their corresponding Re(I) complexes were synthesized. Their geometric structure, electronic transition, photophysical property, thermal stability and electrochemical property were discussed in detail. Experimental data suggested that both complexes were promising yellow emitters with suited energy levels and good thermal stability for electroluminescent application. The correlation between emission performance and electron-withdrawing group was analyzed. It was found that electron-withdrawing group favored emission performance improvement. Their electroluminescence performance was also explored. Yellow electroluminescence was observed with maximum brightness of 1743 cd/m{sup 2}. - Highlights: • Oxadiazole derived diamine ligands and their Re(I) complexes were synthesized. • Their characters and properties were analyzed and compared in detail. • Electron-withdrawing group was proved to be positive for PL improvement. • Electroluminescence was obtained with maximum brightness of 1743 cd/m{sup 2}.

  7. On-site voltage measurement with capacitive sensors on high voltage systems

    NARCIS (Netherlands)

    Wu, L.; Wouters, P.A.A.F.; Heesch, van E.J.M.; Steennis, E.F.

    2011-01-01

    In Extra/High-Voltage (EHV/HV) power systems, over-voltages occur e.g. due to transients or resonances. At places where no conventional voltage measurement devices can be installed, on-site measurement of these occurrences requires preferably non intrusive sensors, which can be installed with little

  8. Spontaneous formation of {1 1-bar 0 1} InGaN quantum wells on a (1 1 2-bar 2) GaN template and their electroluminescence characteristics

    International Nuclear Information System (INIS)

    Masui, Hisashi; Kamber, Derrick S; Brinkley, Stuart E; Wu, Feng; Baker, Troy J; Zhong, Hong; Iza, Michael; Speck, James S; Nakamura, Shuji; DenBaars, Steven P

    2010-01-01

    Discrete dies of the light-emitting diode (LED) fabricated on a (1 1 2-bar 2)-oriented GaN template exhibited electroluminescence peaked at 467 nm and optical output power was greater than 200 µW at 20 mA. The LED was found to have quantum well structure grown on spontaneously formed {1 1-bar 0 1} facets, confirmed via transmission electron microscopy. Polarization switching was observed in luminescence perpendicular to the device surface: the dominant polarization was parallel to [1-bar 1-bar 2 3]. The device structure was shown to be advantageous for photovoltaic cell applications by evaluating photo-induced current, although piezoelectric effects on photocurrent were not explicitly determined. The filling rate of band-edge states was estimated to be 0.025 eV per decade of current via low-temperature electroluminescence measurements

  9. Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells

    International Nuclear Information System (INIS)

    Lu, Y. F.; Cao, X. A.

    2014-01-01

    CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467 nm with a spectral full-width-at-half-maximum of ∼30 nm. With a 3 ML ZnS cladding layer, which also acts as a passivating and strain-compensating layer, the QDQWs acquired a ∼35% quantum yield of the QW emission. Blue and green electroluminescence (EL) was obtained from QDQW light-emitting devices with 3–4.5 ML CdSe QWs. It was found that as the peak blueshifted, the overall EL was increasingly dominated by defect state emission due to poor hole injection into the QDQWs. The weak EL was also attributed to strong field-induced charge separation resulting from the unique QDQW geometry, weakening the oscillator strength of optical transitions

  10. Synthesis, characterization, photophysics and electroluminescence based on a series of pyran-containing emitters

    Energy Technology Data Exchange (ETDEWEB)

    Yang Lifen [State Key Laboratory of Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871 (China); Guan Min [State Key Laboratory of Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871 (China); Bian Zuqiang [State Key Laboratory of Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871 (China)]. E-mail: bianzq@pku.edu.cn; Xie Junqi [State Key Laboratory of Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871 (China); Chen Tianpeng [State Key Laboratory of Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871 (China); Huang Chunhui [State Key Laboratory of Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871 (China)]. E-mail: chhuang@pku.edu.cn

    2006-04-03

    Four unsymmetric as well as symmetric carbazole or oxadiazole modified pyran-containing compounds have been synthesized and characterized. These compounds are 4-(dicyanomethylene)-2-methyl-6-(4-(carbazolo-9-yl)phenyl)-4H-pyran (10), 4-(dicyanomethylene)-2,6-bis(4-(carbazolo-9-yl)phenyl)-4H-pyran (11), 4-(dicyanomethylene)-2-methyl-6-(4-tert-phenyl)-1,3,4-oxdiazole-4-phenyl)-4 H-pyran (12), and 4-(dicyanomethylene)-2,6-bis(4-tert-phenyl)-1,3, 4-oxdiazole-4-phenyl-4H-pyran (13). Photoluminescent measurements indicated that their maximal emissions can be tuned from 543 to 590 nm in acetone solution. Electroluminescent studies based on these compounds as dopants resulted in greenish yellow light emission. It was found that the device based on the bis-condensed symmetric compound (11) with the configuration of indium tin oxide / Copper (II) phthalocyanine (5 nm) / N,N'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine (40 nm) / compound (11) : tris-(8-quinolinolato)aluminium (Alq{sub 3}) (1%) (30 nm) / 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (5 nm) / Alq{sub 3} (40 nm) / Mg : Ag (9 : 1) (200 nm) / Ag (80 nm) has achieved the highest luminance (6869 cd/m{sup 2}) and efficiency (1.32 lm/W and 2.52 cd/A) among the four emitters.

  11. Influence of photo-generated carriers on current spreading in double diode structures for electroluminescent cooling

    Science.gov (United States)

    Radevici, Ivan; Tiira, Jonna; Sadi, Toufik; Oksanen, Jani

    2018-05-01

    Current crowding close to electrical contacts is a common challenge in all optoelectronic devices containing thin current spreading layers (CSLs). We analyze the effects of current spreading on the operation of the so-called double diode structure (DDS), consisting of a light emitting diode (LED) and a photodiode (PD) fabricated within the same epitaxial growth process, and providing an attractive platform for studying electroluminescent (EL) cooling under high bias conditions. We show that current spreading in the common n-type layer between the LED and the PD can be dramatically improved by the strong optical coupling between the diodes, as the coupling enables a photo-generated current through the PD. This reduces the current in the DDS CSL and enables the study of EL cooling using structures that are not limited by the conventional light extraction challenges encountered in normal LEDs. The current spreading in the structures is studied using optical imaging techniques, electrical measurements, simulations, as well as simple equivalent circuit models developed for this purpose. The improved current spreading leads further to a mutual dependence with the coupling efficiency, which is expected to facilitate the process of optimizing the DDS. We also report a new improved value of 63% for the DDS coupling quantum efficiency.

  12. Spectrally resolved hyperfine interactions between polaron and nuclear spins in organic light emitting diodes: Magneto-electroluminescence studies

    Energy Technology Data Exchange (ETDEWEB)

    Crooker, S. A.; Kelley, M. R.; Martinez, N. J. D.; Nie, W.; Mohite, A.; Nayyar, I. H.; Tretiak, S.; Smith, D. L. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Liu, F.; Ruden, P. P. [University of Minnesota, Minneapolis, Minnesota 55455 (United States)

    2014-10-13

    We use spectrally resolved magneto-electroluminescence (EL) measurements to study the energy dependence of hyperfine interactions between polaron and nuclear spins in organic light-emitting diodes. Using layered devices that generate bright exciplex emission, we show that the increase in EL emission intensity I due to small applied magnetic fields of order 100 mT is markedly larger at the high-energy blue end of the EL spectrum (ΔI/I ∼ 11%) than at the low-energy red end (∼4%). Concurrently, the widths of the magneto-EL curves increase monotonically from blue to red, revealing an increasing hyperfine coupling between polarons and nuclei and directly providing insight into the energy-dependent spatial extent and localization of polarons.

  13. Far-field self-focusing and -defocusing radiation behaviors of the electroluminescent light sources due to negative refraction.

    Science.gov (United States)

    Yin, Yu-Feng; Lin, Yen-Chen; Tsai, Tsung-Han; Shen, Yi-Chun; Huang, Jianjang

    2013-01-15

    In recent years, researchers have demonstrated negative refraction theoretically and experimentally by pumping optical power into photonic crystal (PhC) or waveguide structures. The concept of negative refraction can be used to create a perfect lens that focuses an object smaller than the wavelength. By inserting two-dimensional PhCs into the peripheral of a semiconductor light emitting structure, this study presents an electroluminescent device with negative refraction in the visible wavelength range. This approach produces polarization dependent collimation behavior in far-field radiation patterns. The modal dispersion of negative refraction results in strong group velocity modulation, and self-focusing and -defocusing behaviors are apparent from light extraction. This study further verifies experimental results by using theoretic calculations based on equifrequency contours.

  14. Organic light-emitting devices based on solution-processible quinolato-complex supramolecules

    International Nuclear Information System (INIS)

    Cheng, J.-A.; Chen, Chin H.; Shieh, H.-P.D.

    2009-01-01

    This paper discusses a new type of supramolecular material tris{5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinolato} aluminum(III), Al(SCarq) 3 , which we synthesized using three 5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinoline as bidentate ligands. The peak photoluminescence in the solid phase appears at 488 nm. In cyclic voltammetric measurement, two oxidation peaks, which were obtained at -5.6 and -5.9 eV, correspond to HOMO sites of carbazoyl and aluminum quinolates, respectively. In the investigation of solid morphological thin film, the flat surface was investigated using an atomic force microscope. The root mean square (rms) and mean roughness (R a ) were respectively measured to be 0.427 and 0.343 nm. For the fabrication of organic light-emitting devices (OLEDs) using spin-coating techniques, the turn-on voltage and maximum luminescence of the optimized electroluminescence device, glass/ITO (20 nm)/PEDOT:PSS (75 nm)/Al(SCarq) 3 (85 nm)/BCP (8 nm)/LiF (1 nm)/Al (200 nm), were respectively 9.6 V and 35.0 cd m -2 . Due to the electroplex formation between the carbazole (electron-donor) and the aluminum quinolates (electron-acceptor) moieties under an applied DC bias, the chromaticity of electroluminescence shifted to green-yellow with 1931 CIE x,y (0.40, 0.47)

  15. Organic light-emitting devices based on solution-processible quinolato-complex supramolecules

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, J.-A. [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan (China)], E-mail: jacheng.ac89g@nctu.edu.tw; Chen, Chin H. [Microelectronics and Information System Research Center, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Shieh, H.-P.D. [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

    2009-02-15

    This paper discusses a new type of supramolecular material tris{l_brace}5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinolato{r_brace} aluminum(III), Al(SCarq){sub 3}, which we synthesized using three 5-N-[3-(9H-carbazol-9-yl)propyl]-N-(4-methylphenyl) aminesulfonyl-8-hydroxyquinoline as bidentate ligands. The peak photoluminescence in the solid phase appears at 488 nm. In cyclic voltammetric measurement, two oxidation peaks, which were obtained at -5.6 and -5.9 eV, correspond to HOMO sites of carbazoyl and aluminum quinolates, respectively. In the investigation of solid morphological thin film, the flat surface was investigated using an atomic force microscope. The root mean square (rms) and mean roughness (R{sub a}) were respectively measured to be 0.427 and 0.343 nm. For the fabrication of organic light-emitting devices (OLEDs) using spin-coating techniques, the turn-on voltage and maximum luminescence of the optimized electroluminescence device, glass/ITO (20 nm)/PEDOT:PSS (75 nm)/Al(SCarq){sub 3} (85 nm)/BCP (8 nm)/LiF (1 nm)/Al (200 nm), were respectively 9.6 V and 35.0 cd m{sup -2}. Due to the electroplex formation between the carbazole (electron-donor) and the aluminum quinolates (electron-acceptor) moieties under an applied DC bias, the chromaticity of electroluminescence shifted to green-yellow with 1931 CIE{sub x,y} (0.40, 0.47)

  16. Advances in high voltage power switching with GTOs

    International Nuclear Information System (INIS)

    Podlesak, T.F.

    1990-01-01

    The control of high voltage at high power, particularly opening switches, has been difficult in the past. Using gate turnoff thyristors (GTOs) arranged in series enables large currents to be switched at high voltage. The authors report a high voltage opening switch has been successfully demonstrated. This switch uses GTOs in series and successfully operates at voltages higher than the rated voltage of the individual devices. It is believed that this is the first time this has been successfully demonstrated, in that GTOs have been operated in series before, but always in a manner as to not exceed the voltage capability of the individual devices. In short, the devices have not worked together, sharing the voltage, but one device has been operated using several backup devices. Of particular interest is how well the individual devices share the voltage applied to them. Equal voltage sharing between devices is absolutely essential, in order to not exceed the voltage rating of any of the devices in the series chain. This is accomplished at high (microsecond) switching speeds. Thus, the system is useful for high frequency applications as well as high power, making for a flexible circuit system element. This demonstration system is rated at 5 KV and uses 1 KV devices. A larger 24 KV system is under design and will use 4.5 KV devices. In order to design the 24 KV switch, the safe operating area of the large devices must be known thoroughly

  17. [Development of residual voltage testing equipment].

    Science.gov (United States)

    Zeng, Xiaohui; Wu, Mingjun; Cao, Li; He, Jinyi; Deng, Zhensheng

    2014-07-01

    For the existing measurement methods of residual voltage which can't turn the power off at peak voltage exactly and simultaneously display waveforms, a new residual voltage detection method is put forward in this paper. First, the zero point of the power supply is detected with zero cross detection circuit and is inputted to a single-chip microcomputer in the form of pulse signal. Secend, when the zero point delays to the peak voltage, the single-chip microcomputer sends control signal to power off the relay. At last, the waveform of the residual voltage is displayed on a principal computer or oscilloscope. The experimental results show that the device designed in this paper can turn the power off at peak voltage and is able to accurately display the voltage waveform immediately after power off and the standard deviation of the residual voltage is less than 0.2 V at exactly one second and later.

  18. Power conditioning using dynamic voltage restorers under different voltage sag types.

    Science.gov (United States)

    Saeed, Ahmed M; Abdel Aleem, Shady H E; Ibrahim, Ahmed M; Balci, Murat E; El-Zahab, Essam E A

    2016-01-01

    Voltage sags can be symmetrical or unsymmetrical depending on the causes of the sag. At the present time, one of the most common procedures for mitigating voltage sags is by the use of dynamic voltage restorers (DVRs). By definition, a DVR is a controlled voltage source inserted between the network and a sensitive load through a booster transformer injecting voltage into the network in order to correct any disturbance affecting a sensitive load voltage. In this paper, modelling of DVR for voltage correction using MatLab software is presented. The performance of the device under different voltage sag types is described, where the voltage sag types are introduced using the different types of short-circuit faults included in the environment of the MatLab/Simulink package. The robustness of the proposed device is evaluated using the common voltage sag indices, while taking into account voltage and current unbalance percentages, where maintaining the total harmonic distortion percentage of the load voltage within a specified range is desired. Finally, several simulation results are shown in order to highlight that the DVR is capable of effective correction of the voltage sag while minimizing the grid voltage unbalance and distortion, regardless of the fault type.

  19. Demonstration of Li-based alloy coatings as low-voltage stable electron-emission surfaces for field-emission devices

    International Nuclear Information System (INIS)

    Auciello, O.; Krauss, A.R.; Gruen, D.M.; Shah, P.; Corrigan, T.; Kordesch, M.E.; Chang, R.P.; Barr, T.L.

    1999-01-01

    Alkali metals have extremely low work functions and are, therefore, expected to result in significant enhancement of the electron emission if they are used as coatings on Mo or Si microtip field-emission arrays (FEAs). However, the alkali metals are physically and chemically unstable in layers exceeding a few Angstrom in thickness. Maximum enhancement of electron emission occurs for alkali - metal layers 0.5 - 1 ML thick, but it is extremely difficult to fabricate and maintain such a thin alkali - metal coating. We present here an alternative means of producing chemically and thermally stable, self-replenishing lithium coatings approximately 1 ML thick, which results in a 13-fold reduction in the threshold voltage for electron emission compared with uncoated Si FEAs. copyright 1999 American Institute of Physics

  20. Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties

    Directory of Open Access Journals (Sweden)

    Inge Verboven

    2018-02-01

    Full Text Available To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm/barium titanate (10 µm/zinc-oxide (10 µm and poly(3,4-ethylenedioxythiophenepoly(styrenesulfonate (10 µm. Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10–20 µm as smoothing layer/silver (200 nm/poly(3,4-ethylenedioxythiophenepoly(styrenesulfonate (35 nm/super yellow (80 nm/calcium/aluminum (12/17 nm. Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables.

  1. Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties †

    Science.gov (United States)

    Verboven, Inge; Stryckers, Jeroen; Mecnika, Viktorija; Vandevenne, Glen; Jose, Manoj

    2018-01-01

    To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL) devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm)/barium titanate (10 µm)/zinc-oxide (10 µm) and poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (10 µm). Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs) fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10–20 µm) as smoothing layer/silver (200 nm)/poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (35 nm)/super yellow (80 nm)/calcium/aluminum (12/17 nm). Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables. PMID:29438276

  2. Thermonuclear device

    International Nuclear Information System (INIS)

    Suzuki, Shohei

    1988-01-01

    Purpose: To obtain high voltage withstanding current introduction terminals not suffering from the effects of the reduction in the creeping voltage withstanding property by the application of magnetic fields. Constitution: This invention concerns a current introduction terminal for supplying electric current to coils for use in a thermonuclear device, etc. The conductor of the current introduction terminal on the side of vacuum is completely covered with solid insulator. This can eliminate the portion of securing the creeping withstanding voltage. The voltage withstanding characteristics of the solid insulator covering the portion of the conductor on the side of vacuum has a constant value irrespective of the atmosphere or the absence or presence of magnetic fields. Accordingly, the voltage withstanding characteristics of the current introduction terminal on the side of vacuum are determined by the property of the solid insulator, which is not reduced by the application of magnetic fields. (Ikeda, J.)

  3. Green-Yellow Electroluminescence from a host-dopant blended system as the active layer in a bilayer polymer light emitting diode: Poly(n-vinyl carbazole) as the host and a new soluble thiophene based copolymer [poly(2,2‧-BT)-co-(3-DDT)] as the dopant

    Science.gov (United States)

    Shahalizad, Afshin; Ahmadi-Kandjani, Sohrab; Movla, Hossein; Omidi, Hafez; Massoumi, Bakhshali; Zakerhamidi, Mohammad Sadegh; Entezami, Ali Akbar

    2014-11-01

    A new type of bilayer Polymer Light Emitting Diode (PLED) which emits green-yellow light is reported. In this PLED, a novel thiophene-based copolymer [poly(2,2‧-BT)-co-(3-DDT)] with an excellent electron transporting property has been doped in hole transporting and electron blocking poly(n-vinylcarbazole) (PVK). Formation of type-II heterojunctions among nm-size features in PVK:poly(2,2‧-BT)-co-(3-DDT) blended system makes exciplex and electroplex emissions would be dominant in the Electroluminescence (EL) spectrum of the device. These cross recombinations between electrons in the LUMO of poly(2,2‧-BT)-co-(3-DDT) and holes in the HOMO of PVK is a reason for the low driving voltage of the PLED because there is no need for the charge carriers to hop or tunnel to the adjacent polymer. Morphological investigations demonstrate that the mixing degree between the components is high, favoring formation of exciplexes and electroplexes at the interface of the components.

  4. Manipulating the voltage dependence of tunneling spin torques

    KAUST Repository

    Manchon, Aurelien

    2012-01-01

    Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact

  5. Various mechanisms and clinical phenotypes in electrical short circuits of high-voltage devices: report of four cases and review of the literature.

    Science.gov (United States)

    Tsurugi, Takuo; Matsui, Shogo; Nakajima, Hiroshi; Nishii, Nobuhiro; Honda, Toshihiro; Kaneko, Yoshiaki

    2015-06-01

    An electrical short circuit is a rare complication in a high-voltage implantable cardioverter-defibrillator (ICD). However, the inability of an ICD to deliver appropriate shock therapy can be life-threatening. During the last 2 years, four cases of serious complications related to an electrical short circuit have been reported in Japan. A spark due to an electrical short circuit resulted in the failure of an ICD shock to terminate ventricular tachycardia and total damage to the ICD generator in three of four cases. Two of the four patients died from an electrical short circuit between the right ventricle and superior vena cava (SVC) leads. The others had audible sounds from the ICD generator site and were diagnosed with a lead-to-can abrasion, which was manifested by the arc mark on the surface of the can. It is still difficult to predict the occurrence of an electrical short circuit in current ICD systems. To reduce the probability of an electrical short circuit, we suggest the following: (i) avoid lead stress at ICD implantation, (ii) select a single-coil lead instead of a dual-coil lead, or (iii) use a unique algorithm which automatically disconnect can or SVC lead from shock deliver circuit when excessive current was detected. Published on behalf of the European Society of Cardiology. All rights reserved. © The Author 2015. For permissions please email: journals.permissions@oup.com.

  6. Photo/electroluminescence properties of an europium (III) complex doped in 4,4'-N,N'-dicarbazole-biphenyl matrix

    International Nuclear Information System (INIS)

    Zhou Yonghui; Zhou Liang; Wu, Jing; Li, Hong-Yan; Zheng Youxuan; You Xiaozeng; Zhang Hongjie

    2010-01-01

    The photoluminescence properties of one europium complex Eu(TFNB) 3 Phen (TFNB = 4,4,4-trifluoro-1-(naphthyl)-1,3-butanedione, Phen = 1,10-phenanthroline) doped in a hole-transporting material CBP (4,4'-N,N'-dicarbazole-biphenyl) films were studied. A series of organic light-emitting devices (OLEDs) using Eu(TFNB) 3 Phen as the emitter were fabricated with a multilayer structure of indium tin oxide, 250 Ω/square)/TPD (N,N'-diphenyl-N,N'-bis(3-methyllphenyl)-(1,1'-biphenyl)-4,4'-diamine, 50 nm)/Eu(TFNB) 3 phen (x): CBP (4,4'-N,N'-dicarbazole-biphenyl, 45 nm)/BCP (2,9-dimethyl-4,7-diphenyl-l,10 phenanthroline, 20 nm)/AlQ (tris(8-hydroxy-quinoline) aluminium, 30 nm)/LiF (1 nm)/Al (100 nm), where x is the weight percentage of Eu(TFNB) 3 phen doped in the CBP matrix (1-6%). A red emission at 612 nm with a half bandwidth of 3 nm, characteristic of Eu(III) ion, was observed with all devices. The device with a 3% dopant concentration shows the maximum luminance up to 1169 cd/m 2 (18 V) and the device with a 5% dopant concentration exhibits a current efficiency of 4.46 cd/A and power efficiency of 2.03 lm/W. The mechanism of the electroluminescence was also discussed.

  7. Voltage control of ferromagnetic resonance

    Directory of Open Access Journals (Sweden)

    Ziyao Zhou

    2016-06-01

    Full Text Available Voltage control of magnetism in multiferroics, where the ferromagnetism and ferroelectricity are simultaneously exhibiting, is of great importance to achieve compact, fast and energy efficient voltage controllable magnetic/microwave devices. Particularly, these devices are widely used in radar, aircraft, cell phones and satellites, where volume, response time and energy consumption is critical. Researchers realized electric field tuning of magnetic properties like magnetization, magnetic anisotropy and permeability in varied multiferroic heterostructures such as bulk, thin films and nanostructure by different magnetoelectric (ME coupling mechanism: strain/stress, interfacial charge, spin–electromagnetic (EM coupling and exchange coupling, etc. In this review, we focus on voltage control of ferromagnetic resonance (FMR in multiferroics. ME coupling-induced FMR change is critical in microwave devices, where the electric field tuning of magnetic effective anisotropic field determines the tunability of the performance of microwave devices. Experimentally, FMR measurement technique is also an important method to determine the small effective magnetic field change in small amount of magnetic material precisely due to its high sensitivity and to reveal the deep science of multiferroics, especially, voltage control of magnetism in novel mechanisms like interfacial charge, spin–EM coupling and exchange coupling.

  8. 21 CFR 892.1700 - Diagnostic x-ray high voltage generator.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Diagnostic x-ray high voltage generator. 892.1700... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1700 Diagnostic x-ray high voltage generator. (a) Identification. A diagnostic x-ray high voltage generator is a device that is intended to...

  9. Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices

    Science.gov (United States)

    Im, Jaemo; Auciello, O.; Baumann, P. K.; Streiffer, S. K.; Kaufman, D. Y.; Krauss, A. R.

    2000-01-01

    Precise control of composition and microstructure is critical for the production of (BaxSr1-x)Ti1+yO3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba0.5Sr0.5TiO3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O2) process pressure, while the O2/Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications.

  10. Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices

    International Nuclear Information System (INIS)

    Im, Jaemo; Auciello, O.; Baumann, P. K.; Streiffer, S. K.; Kaufman, D. Y.; Krauss, A. R.

    2000-01-01

    Precise control of composition and microstructure is critical for the production of (Ba x Sr 1-x )Ti 1+y O 3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba 0.5 Sr 0.5 TiO 3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O 2 ) process pressure, while the O 2 /Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications. (c) 2000 American Institute of Physics

  11. Enhancement of efficiencies for tandem green phosphorescent organic light-emitting devices with a p-type charge generation layer

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Byung Soo; Jeon, Young Pyo; Lee, Dae Uk; Kim, Tae Whan, E-mail: twk@hanayng.ac.kr

    2014-10-15

    The operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the organic light-emitting device with a molybdenum trioxide layer. The maximum brightness of the tandem green phosphorescent organic light-emitting device at 21.9 V was 26,540 cd/m{sup 2}. The dominant peak of the electroluminescence spectra for the devices was related to the fac-tris(2-phenylpyridine) iridium emission. - Highlights: • Tandem OLEDs with CGL were fabricated to enhance their efficiency. • The operating voltage of the tandem OLED with a HAT-CN layer was improved by 3%. • The efficiency and brightness of the tandem OLED were 13.9 cd/A and 26,540 cd/m{sup 2}. • Efficiency of the OLED with a HAT-CN layer was lower than that with a MoO{sub 3} layer. - Abstract: Tandem green phosphorescent organic light-emitting devices with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile or a molybdenum trioxide charge generation layer were fabricated to enhance their efficiency. Current density–voltage curves showed that the operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the corresponding organic light-emitting device with a molybdenum trioxide layer. The efficiency and the brightness of the tandem green phosphorescent organic light-emitting device were 13.9 cd/A and 26,540 cd/m{sup 2}, respectively. The current efficiency of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was lower by 1.1 times compared to that of the corresponding organic light-emitting device with molybdenum trioxide layer due to the decreased charge generation and transport in the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer resulting from triplet–triplet exciton annihilation.

  12. Development of Multi-Functional Voltage Restore System

    Science.gov (United States)

    Suzuki, Satoshi; Ueda, Yoshinobu; Koganezawa, Takehisa; Ogihara, Yoshinori; Mori, Kenjiro; Fukazu, Naoaki

    Recently, with the dawn of the electric deregulation, the installation of distributed generation with power electronics device has grown. This current causes a greater concern of power quality, primarily voltage disturbance for power companies, and their interest in power quality is peaking. Utilities are also interested in keeping their customers satisfied, as well as keeping them on-line and creating more revenue for the utility. As a countermeasure against the above surroundings, a variety type of devices based on power electronics has been developed to protect customers' load from power line voltage disturbance. One of them is the series type voltage restore. The series device is an active device, designed to provide a pure sinusoidal load voltage at all times, correcting voltage disturbance. Series type device compensates for voltage anomalies by inserting the ‘missing’ voltage onto the line through insertion transformer and inverter. This paper shows the setting guideline of target level to compensate voltage disturbance, that is, voltage dip, voltage harmonics, voltage imbalance and voltage flicker, and the design approach of the prototype of series voltage restores to accomplish the required compensation level. The prototype system gives satisfactory compensation performance through evaluation tests, which confirm the validity and effectiveness of the system.

  13. Pattern Visual Evoked Potentials Elicited by Organic Electroluminescence Screen

    Directory of Open Access Journals (Sweden)

    Celso Soiti Matsumoto

    2014-01-01

    Full Text Available Purpose. To determine whether organic electroluminescence (OLED screens can be used as visual stimulators to elicit pattern-reversal visual evoked potentials (p-VEPs. Method. Checkerboard patterns were generated on a conventional cathode-ray tube (S710, Compaq Computer Co., USA screen and on an OLED (17 inches, 320 × 230 mm, PVM-1741, Sony, Tokyo, Japan screen. The time course of the luminance changes of each monitor was measured with a photodiode. The p-VEPs elicited by these two screens were recorded from 15 eyes of 9 healthy volunteers (22.0 ± 0.8 years. Results. The OLED screen had a constant time delay from the onset of the trigger signal to the start of the luminescence change. The delay during the reversal phase from black to white for the pattern was 1.0 msec on the cathode-ray tube (CRT screen and 0.5 msec on the OLED screen. No significant differences in the amplitudes of P100 and the implicit times of N75 and P100 were observed in the p-VEPs elicited by the CRT and the OLED screens. Conclusion. The OLED screen can be used as a visual stimulator to elicit p-VEPs; however the time delay and the specific properties in the luminance change must be taken into account.

  14. Pattern visual evoked potentials elicited by organic electroluminescence screen.

    Science.gov (United States)

    Matsumoto, Celso Soiti; Shinoda, Kei; Matsumoto, Harue; Funada, Hideaki; Sasaki, Kakeru; Minoda, Haruka; Iwata, Takeshi; Mizota, Atsushi

    2014-01-01

    To determine whether organic electroluminescence (OLED) screens can be used as visual stimulators to elicit pattern-reversal visual evoked potentials (p-VEPs). Checkerboard patterns were generated on a conventional cathode-ray tube (S710, Compaq Computer Co., USA) screen and on an OLED (17 inches, 320 × 230 mm, PVM-1741, Sony, Tokyo, Japan) screen. The time course of the luminance changes of each monitor was measured with a photodiode. The p-VEPs elicited by these two screens were recorded from 15 eyes of 9 healthy volunteers (22.0 ± 0.8 years). The OLED screen had a constant time delay from the onset of the trigger signal to the start of the luminescence change. The delay during the reversal phase from black to white for the pattern was 1.0 msec on the cathode-ray tube (CRT) screen and 0.5 msec on the OLED screen. No significant differences in the amplitudes of P100 and the implicit times of N75 and P100 were observed in the p-VEPs elicited by the CRT and the OLED screens. The OLED screen can be used as a visual stimulator to elicit p-VEPs; however the time delay and the specific properties in the luminance change must be taken into account.

  15. Correlation between the Open-Circuit Voltage and Charge Transfer State Energy in Organic Photovoltaic Cells.

    Science.gov (United States)

    Zou, Yunlong; Holmes, Russell J

    2015-08-26

    In order to further improve the performance of organic photovoltaic cells (OPVs), it is essential to better understand the factors that limit the open-circuit voltage (VOC). Previous work has sought to correlate the value of VOC in donor-acceptor (D-A) OPVs to the interface energy level offset (EDA). In this work, measurements of electroluminescence are used to extract the charge transfer (CT) state energy for multiple small molecule D-A pairings. The CT state as measured from electroluminescence is found to show better correlation to the maximum VOC than EDA. The difference between EDA and the CT state energy is attributed to the Coulombic binding energy of the CT state. This correlation is demonstrated explicitly by inserting an insulating spacer layer between the donor and acceptor materials, reducing the binding energy of the CT state and increasing the measured VOC. These results demonstrate a direct correlation between maximum VOC and CT state energy.

  16. Voltage regulating circuit

    NARCIS (Netherlands)

    2005-01-01

    A voltage regulating circuit comprising a rectifier (2) for receiving an AC voltage (Vmains) and for generating a rectified AC voltage (vrec), and a capacitor (3) connected in parallel with said rectified AC voltage for providing a DC voltage (VDC) over a load (5), characterized by a unidirectional

  17. New Copolymers Containing Charge Carriers for Organic Devices with ITO Films Treated by UV-Ozone Using High Intensity Discharge Lamp

    Directory of Open Access Journals (Sweden)

    Emerson Roberto SANTOS

    2009-02-01

    Full Text Available For electroluminescent devices new copolymers were synthesized using a Suzuki cross-coupling reaction based on monomers (fluorine-alt-phenylene in conjugation with quinoline-alt-phenylene units. They were characterized by 1H NMR, 13C NMR and FTIR. TGA measurements indicated that the copolymers have good thermal properties and no weight loss was observed up to 250 °C. The UV-Vis spectra were characterized by absorptions from the fluorene-alt-phenylene and quinoline-alt-phenylene segments in the backbone, while their photoluminescence (PL spectra dominated by emissions from the fluorene excimer. For devices assembly ITO films were treated using a High Intensity Discharge Lamp (HPMVL without outer bulb presenting high ozone concentration than that conventional germicidal lamp. The device with ITO treated revealed significant decrease of threshold voltage (or turn-on voltage compared by untreated with I-V curves. This decrease can be related by water and carbon dioxide extracted on surface after UV-Ozone treatment revealed by DRIFT measurements.

  18. Interfacial exciplex electroluminescence between diamine derivatives with starburst molecular structure and tris(acetylacetonato)-(mono-phenothroline) thulium

    Energy Technology Data Exchange (ETDEWEB)

    He Hong [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Li Wenlian [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)], E-mail: wllioel@yahoo.com.cn; Su Zisheng; Chu Bei; Bi Defeng; Chen Yiren; Wang Dan; Su Wenming; Li Bin [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

    2009-02-20

    The authors demonstrate the interfacial exciplex electroluminescence (EL) between tris(acetylacetonato)-(mono-phenothroline) thulium [Tm(AcA){sub 3}phen] and two diamine derivatives with starburst molecular structure- 4,4',4''-tris[2-naphthyl(phenyl)amino]triphenylamine (2-TNATA) and 4,4',4''-tris[3-methyl-pheny(phenyl)-amino]triphenyl-amine (m-MTDATA), both of which have the same ionization potential (IP) (approximately 5.1 eV). When the Tm-complex and the two diamine derivatives are respectively used as the electron accepter and donors, the two EL devices exhibit different exciplex emissions, which verifies our previously reported opinion regarding the effect of the different substitutes on exciplex emission [W.M. Su, W.L. Li, Q. Xin, Z.S. Su, B. Chu, D.F. Bi, H. He, J.H. Niu, Appl. Phys. Lett. 91 (2007) 043508]. When the mixture of the two diamine derivatives is used as a donor, a white EL device with the Commission International de l'Eclairage (CIE) coordinates of (0.277, 0.323) is achieved. The exciplex formation mechanisms of the devices with the two different donors are discussed.

  19. Interfacial exciplex electroluminescence between diamine derivatives with starburst molecular structure and tris(acetylacetonato)-(mono-phenothroline) thulium

    International Nuclear Information System (INIS)

    He Hong; Li Wenlian; Su Zisheng; Chu Bei; Bi Defeng; Chen Yiren; Wang Dan; Su Wenming; Li Bin

    2009-01-01

    The authors demonstrate the interfacial exciplex electroluminescence (EL) between tris(acetylacetonato)-(mono-phenothroline) thulium [Tm(AcA) 3 phen] and two diamine derivatives with starburst molecular structure- 4,4',4''-tris[2-naphthyl(phenyl)amino]triphenylamine (2-TNATA) and 4,4',4''-tris[3-methyl-pheny(phenyl)-amino]triphenyl-amine (m-MTDATA), both of which have the same ionization potential (IP) (approximately 5.1 eV). When the Tm-complex and the two diamine derivatives are respectively used as the electron accepter and donors, the two EL devices exhibit different exciplex emissions, which verifies our previously reported opinion regarding the effect of the different substitutes on exciplex emission [W.M. Su, W.L. Li, Q. Xin, Z.S. Su, B. Chu, D.F. Bi, H. He, J.H. Niu, Appl. Phys. Lett. 91 (2007) 043508]. When the mixture of the two diamine derivatives is used as a donor, a white EL device with the Commission International de l'Eclairage (CIE) coordinates of (0.277, 0.323) is achieved. The exciplex formation mechanisms of the devices with the two different donors are discussed

  20. Effect of interface voids on electroluminescence colors for ZnO microdisk/p-GaN heterojunction light-emitting diodes

    Science.gov (United States)

    Mo, Ran; Choi, Ji Eun; Kim, Hyeong Jin; Jeong, Junseok; Kim, Jong Chan; Kim, Yong-Jin; Jeong, Hu Young; Hong, Young Joon

    2017-10-01

    This study investigates the influence of voids on the electroluminescence (EL) emission color of ZnO microdisk/p-GaN heterojunction light-emitting diodes (LEDs). For this study, position-controlled microdisk arrays were fabricated on patterned p-GaN via wet chemical epitaxy of ZnO, and specifically, the use of trisodium citrate dihydrate (TCD) yielded high-density voids at the bottom of the microdisk. Greenish yellow or whitish blue EL was emitted from the microdisk LEDs formed with or without TCD, respectively, at reverse-bias voltages. Such different EL colors were found to be responsible for the relative EL intensity ratio between indigo and yellow emission peaks, which were originated from radiative recombination at p-GaN and ZnO, respectively. The relative EL intensity between dichromatic emissions is discussed in terms of (i) junction edge effect provoked by interfacial voids and (ii) electron tunneling probability depending on the depletion layer geometry.

  1. Co-deposition methods for the fabrication of organic optoelectronic devices

    Science.gov (United States)

    Thompson, Mark E.; Liu, Zhiwei; Wu, Chao

    2016-09-06

    A method for fabricating an OLED by preparing phosphorescent metal complexes in situ is provided. In particular, the method simultaneously synthesizes and deposits copper (I) complexes in an organic light emitting device. Devices comprising such complexes may provide improved photoluminescent and electroluminescent properties.

  2. Green electroluminescence from ZnO/n-InP heterostructure fabricated by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Zhu Huichao; Zhang Baolin; Li Xiangping; Dong Xin; Li Wancheng; Guan Hesong; Cui Yongguo; Xia Xiaochuan; Yang Tianpeng; Chang Yuchun; Du Guotong

    2007-01-01

    Vertically aligned ZnO films were deposited on n-InP by metalorganic chemical vapour deposition. X-ray diffraction, field emission scanning electron microscopy and photoluminescence measurements demonstrated that the ZnO films had good quality. By evaporating AuZn electrodes on both ZnO and InP surfaces, a ZnO-based light emitting device was fabricated. Under forward voltage, weak green emissions can be observed in darkness

  3. Electroluminescence of erbium in Al/α-Si:H(Er)/p-c-Si/Al structure

    International Nuclear Information System (INIS)

    Kon'kov, I.O.; Kuznetsov, A.N.; Pak, P.E.; Terukov, E.I.; Granitsyna, L.S.

    2001-01-01

    It is informed for the first time on the observation of the erbium intensive electroluminescence from the amorphous hydrated silicon layer by application of the Al/α-Si:H(Er)/p-c-Si/Al structure in the direct shift mode. The above structure is the n-p-heterostructure with the barrier values of 0.3-0.4 eV for the electrons and 0.9-1.1 eV for the holes. The electroluminescence efficiency is evaluated at the level ∼ 2 x 10 -5 . The electroluminescence effect in the Al/α-Si:H(Er)/p-c-Si/Al structure is connected with the hole tunneling from the crystal silicon by the amorphous silicon localized states with the subsequent release into the valent zone [ru

  4. Magnetic field enhanced electroluminescence in organic light emitting diodes based on electron donor-acceptor exciplex blends

    Science.gov (United States)

    Baniya, Sangita; Basel, Tek; Sun, Dali; McLaughlin, Ryan; Vardeny, Zeev Valy

    2016-03-01

    A useful process for light harvesting from injected electron-hole pairs in organic light emitting diodes (OLED) is the transfer from triplet excitons (T) to singlet excitons (S) via reverse intersystem crossing (RISC). This process adds a delayed electro-luminescence (EL) emission component that is known as thermally activated delayed fluorescence (TADF). We have studied electron donor (D)/acceptor(A) blends that form an exciplex manifold in which the energy difference, ΔEST between the lowest singlet (S1) and triplet (T1) levels is relatively small (exciplex blend is enhanced up to 40% by applying a relatively weak magnetic field of 50 mT at ambient. Moreover the MEL response is activated with activation energy similar that of the EL emission. This suggests that the large magneto-EL originates from an additional spin-mixing channel between singlet and triplet states of the generated exciplexes, which is due to TADF. We will report on the MEL dependencies on the temperature, bias voltage, and D-A materials for optimum OLED performance. Supported by SAMSUNG Global Research Outreach (GRO) program, and also by the NSF-Material Science & Engineering Center (MRSEC) program at the University of Utah (DMR-1121252).

  5. Photo- and electroluminescence of undoped and rare earth doped ZnO electroluminors

    International Nuclear Information System (INIS)

    Bhushan, S.; Pandey, A.N.; Kaza, B.R.

    1977-01-01

    A series of undoped and rare earth (Dy, Yb, Nd, Pr, Gd, La, Sm and Er) doped ZnO electroluminors have been prepared and their photo- (PL) and electroluminescence (EL) spectra at different concentrations of rare earth ions have been investigated. PL and EL spectra of undoped electroluminescence consist of three peaks. Due to the addition of the rare earth ions these peaks are shifted either to the longer or to the shorter wavelength side. The intensities are also either decreased or increased. Experimental results favour the donor-accepted model for this system. (Auth.)

  6. An IBM-Compatible 640 X 200 Electroluminescent (EL) Display Monitor

    Science.gov (United States)

    Gullick, Paul; Schmachtenberg, Richard; Laakso, Carl

    1986-05-01

    An electroluminescent flat-panel display has been developed and recently introduced that fills any of the needs of the portable computer market. The display is very thin, yet rugged enough for the rigors of portability. It is highly integrated, and very reliable. It has the crisp and clear display image that is typical of high quality electroluminescent displays. The unit has a pixel matrix organization and pixel dimensions that are not only asthetically and ergonomically pleasing, but also make the display compatible with the most widely used software packages run on today's personal computers (Figure 1).

  7. Non-contact current and voltage sensor

    Science.gov (United States)

    Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

    2014-03-25

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  8. Synthesis and Electroluminescent Properties of Bis(3H-1,2,3-triazolo-[4,5-b]pyridine-3-olzinc Zn(TAP2

    Directory of Open Access Journals (Sweden)

    Trinh Dac Hoanh

    2012-01-01

    Full Text Available A new light-emissive material, bis(3H-1,2,3-triazolo-[4,5-b]pyridine-3-olzinc (Zn(TAP2, has been synthesized and characterized by FT-NMR, FT-IR, UV-Vis, and elemental analysis. The photoluminescence (PL of Zn(TAP2 was measured from the DMF solution at 460 nm. The HOMO (6.5 eV and LUMO (2.8 eV energy levels of Zn(TAP2 were estimated from the measurement of cyclic voltammetry. The devices with structures of ITO/NPB/Zn(TAP2/LiF/Al and ITO/NPB/Zn(TAP2/Alq3/LiF/Al were constructed to investigate their electroluminescent (EL performance. Zn (TAP2 is supposed to be a good emitting material in the EL device.

  9. Radiation detection device

    International Nuclear Information System (INIS)

    Peschmann, Kristian.

    1982-01-01

    A radiation detector suitable for use in computer tomography device has an ionization chamber which comprises a high voltage electrode, a collector electrode, a high voltage source having two terminals, one connected to the high voltage electrode, current measuring means having two terminals, one connected to the high voltage source and the other to the collector electrode, and an auxilliary electrode near and parallel to the entrance window of the device, having one adjacent to the high voltage electrode and the other adjacent but not connected to the collector electrode. The auxilliary electrode is connected to the high voltage source. In this way the electric field between the high voltage and collector electrodes is made homogeneous in the vicinity of the auxilliary electrode, improving the measuring speed of the detector

  10. Carrier injection and recombination processes in perovskite CH3NH3PbI3 solar cells studied by electroluminescence spectroscopy

    Science.gov (United States)

    Handa, Taketo; Okano, Makoto; Tex, David M.; Shimazaki, Ai; Aharen, Tomoko; Wakamiya, Atsushi; Kanemitsu, Yoshihiko

    2016-02-01

    Organic-inorganic hybrid perovskite materials, CH3NH3PbX3 (X = I and Br), are considered as promising candidates for emerging thin-film photovoltaics. For practical implementation, the degradation mechanism and the carrier dynamics during operation have to be clarified. We investigated the degradation mechanism and the carrier injection and recombination processes in perovskite CH3NH3PbI3 solar cells using photoluminescence (PL) and electroluminescence (EL) imaging spectroscopies. By applying forward bias-voltage, an inhomogeneous distribution of the EL intensity was clearly observed from the CH3NH3PbI3 solar cells. By comparing the PL- and EL-images, we revealed that the spatial inhomogeneity of the EL intensity is a result of the inhomogeneous luminescence efficiency in the perovskite layer. An application of bias-voltage for several tens of minutes in air caused a decrease in the EL intensity and the conversion efficiency of the perovskite solar cells. The degradation mechanism of perovskite solar cells under bias-voltage in air is discussed.

  11. Enhanced phosphorescence and electroluminescence in triplet emitters by doping gold into cadmium selenide/zinc sulfide nanoparticles

    International Nuclear Information System (INIS)

    Liu, H.-W.; Laskar, Inamur R.; Huang, C.-P.; Cheng, J.-A.; Cheng, S.-S.; Luo, L.-Y.; Wang, H.-R.; Chen, T.-M.

    2005-01-01

    Gold-cadmium selenide/zinc sulfide (Au-CdSe/ZnS) nanocomposites (NCs) were synthesized and characterized by transmission electron microscopy (TEM), energy dispersive X-ray (EDX) analysis, ultraviolet-visible (UV-visible) absorption and photoluminescence (PL) emission spectroscopy. The PL intensity in the Au-CdSe/ZnS NCs system was found to be much greater than that of CdSe/ZnS nanoparticles (NPs) alone, because of the surface-enhanced Raman scattering of Au NPs. Adding Au-CdSe/ZnS NCs to the cyclometalated iridium(III) complex (Ir-complex) greatly enhanced the PL intensity of a triplet emitter. Three double-layered electroluminescence (EL) devices were fabricated where the emitting zone contains the definite mixture of Ir-complex and the NCs [molar concentration of Ir-complex/NCs = 1:0 (Blank, D-1), 1:1 (D-2) and 1:3 (D-3)] and the device D-2 exhibited optimal EL performances

  12. Sharp green electroluminescence from 1H-pyrazolo[3,4-b]quinoline-based light-emitting diodes

    Science.gov (United States)

    Tao, Y. T.; Balasubramaniam, E.; Danel, A.; Jarosz, B.; Tomasik, P.

    2000-09-01

    A multilayer organic light-emitting diode was fabricated using a fluorescent compound {6-N,N-diethylamino-1-methyl-3-phenyl-1H-pyrazolo[3,4-b]quinoline} (PAQ-NEt2) doped into the hole-transporting layer of NPB {4,4'-bis[N-(1-naphthyl-1-)-N-phenyl-amino]-biphenyl}, with the TPBI {2,2',2″-(1,3,5-phenylene)tris[1-phenyl-1H-benzimidazole]} as an electrontransporting material. At 16% PAQ-NEt2 doping concentration, the device gave a sharp, bright, and efficient green electroluminescence (EL) peaked at around 530 nm. The full width at half maximum of the EL is 60 nm, which is 60% of the green emission from typical NPB/AlQ [where AlQ=tris(8-hydroxyquinoline) aluminum] device. For the same concentration, a maximum luminance of 37 000 cd/m2 was obtained at 10.0 V and the maximum power, luminescence, and external quantum efficiencies were obtained 4.2 lm/W, 6.0 cd/A, and 1.6%, respectively, at 5.0 V.

  13. Single-crystal structure, photophysical characteristics and electroluminescent properties of bis(2-(4-trifluoromethyl-2-hydroxyphenyl)benzothiazolate)zinc

    Energy Technology Data Exchange (ETDEWEB)

    Xu Huixia, E-mail: xuhuixia0824@163.com [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); Yue, Yan [Department of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Wang Hua [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); Chen Liuqing [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China); Hao Yuying [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); Department of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Xu Bingshe [Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030024 (China); College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024 (China)

    2012-04-15

    In this paper, a zinc (II) complex of Zn{sub 2}(4-tfmBTZ){sub 4} (4-tfmBTZ=2-(4-trifluoromethyl-2-hydroxyphenyl)benzothiazolate) was reported. Via combination of experimental and theoretical approaches, its molecular structure, photophysical characteristics, electronic structure and electroluminescent properties were investigated. The results indicate that Zn{sub 2}(4-tfmBTZ){sub 4} exists as five-coordinate geometric structure and two zinc atoms are bridged by oxygen atoms. The intense absorption band was located at 404 nm, which mainly originate from the transition HOMO-1 to LUMO+2. The blue-light emission was observed in tetrahydrofuran solution and thin film. White-light emission with four emission peaks was observed with CIE coordinate of (0.29, 0.33) and a higher CRI of 85.1 by fabricating bilayer device using Zn{sub 2}(4-tfmBTZ){sub 4} as electron-transport and NPB as hole-transport material. - Highlights: Black-Right-Pointing-Pointer The single-crystal and electronic structures of Zn{sub 2}(4-tfmBTZ){sub 4}. Black-Right-Pointing-Pointer The multicolor emission of Zn{sub 2}(4-tfmBTZ){sub 4} were realized by the simple devices. Black-Right-Pointing-Pointer White OLED is achieved with particularly high color rending index (CRI) by the emission of Zn{sub 2}(4-tfmBTZ){sub 4}.

  14. Single-crystal structure, photophysical characteristics and electroluminescent properties of bis(2-(4-trifluoromethyl-2-hydroxyphenyl)benzothiazolate)zinc

    International Nuclear Information System (INIS)

    Xu Huixia; Yue, Yan; Wang Hua; Chen Liuqing; Hao Yuying; Xu Bingshe

    2012-01-01

    In this paper, a zinc (II) complex of Zn 2 (4-tfmBTZ) 4 (4-tfmBTZ=2-(4-trifluoromethyl-2-hydroxyphenyl)benzothiazolate) was reported. Via combination of experimental and theoretical approaches, its molecular structure, photophysical characteristics, electronic structure and electroluminescent properties were investigated. The results indicate that Zn 2 (4-tfmBTZ) 4 exists as five-coordinate geometric structure and two zinc atoms are bridged by oxygen atoms. The intense absorption band was located at 404 nm, which mainly originate from the transition HOMO−1 to LUMO+2. The blue-light emission was observed in tetrahydrofuran solution and thin film. White-light emission with four emission peaks was observed with CIE coordinate of (0.29, 0.33) and a higher CRI of 85.1 by fabricating bilayer device using Zn 2 (4-tfmBTZ) 4 as electron-transport and NPB as hole-transport material. - Highlights: ► The single-crystal and electronic structures of Zn 2 (4-tfmBTZ) 4 . ► The multicolor emission of Zn 2 (4-tfmBTZ) 4 were realized by the simple devices. ► White OLED is achieved with particularly high color rending index (CRI) by the emission of Zn 2 (4-tfmBTZ) 4 .

  15. Aftereffect of UV excitation on the ZnS electroluminescent emission

    International Nuclear Information System (INIS)

    Maxia, V.; Muntoni, C.; Murgia, M.

    1980-01-01

    The initial a.c. electroluminescent (EL) emission of ZnS(Cu) previously excited with UV light has been studied. The experiments showed that the EL build-up is made more swift by the preceding UV excitation. This result is ascribed to space charge produced by UV excitation which affects the exchange of electrons between lattice and EL defects. (author)

  16. Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Chung-Yi; Chang, Chih-Chiang [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Huang, Chih-Hsiung; Huang, Shih-Hsien [Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Liu, C. W., E-mail: chee@cc.ee.ntu.edu.tw [Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan (China); Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); National Nano Device Labs, Hsinchu 30077, Taiwan (China); Huang, Yi-Chiau; Chung, Hua; Chang, Chorng-Ping [Applied Materials Inc., Sunnyvale, California 94085 (United States)

    2016-08-29

    Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layer through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.

  17. Surface modification and characterization of indium-tin oxide for organic light-emitting devices.

    Science.gov (United States)

    Zhong, Z Y; Jiang, Y D

    2006-10-15

    In this work, we used different treatment methods (ultrasonic degreasing, hydrochloric acid treatment, and oxygen plasma) to modify the surfaces of indium-tin oxide (ITO) substrates for organic light-emitting devices. The surface properties of treated ITO substrates were studied by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), sheet resistance, contact angle, and surface energy measurements. Experimental results show that the ITO surface properties are closely related to the treatment methods, and the oxygen plasma is more efficient than the other treatments since it brings about smoother surfaces, lower sheet resistance, higher work function, and higher surface energy and polarity of the ITO substrate. Moreover, polymer light-emitting electrochemical cells (PLECs) with differently treated ITO substrates as device electrodes were fabricated and characterized. It is found that surface treatments of ITO substrates have a certain degree of influence upon the injection current, brightness, and efficiency, but hardly upon the turn-on voltages of current injection and light emission, which are in agreement with the measured optical energy gap of the electroluminescent polymer. The oxygen plasma treatment on the ITO substrate yields the best performance of PLECs, due to the improvement of interface formation and electrical contact of the ITO substrate with the polymer blend in the PLECs.

  18. Harmonic current interaction at a low voltage customer's installations

    NARCIS (Netherlands)

    Bhattacharyya, S.; Myrzik, J.M.A.; Kling, W.L.; Cobben, J.F.G.; Casteren, van J.

    2009-01-01

    The increased uses of power electronics and switching devices in the electricity network have changed the operational environment of the power system. These devices have nonlinear voltage-current characteristics and produce harmonic currents, and consequently distort the voltage waveform. A low

  19. High voltage systems

    International Nuclear Information System (INIS)

    Martin, M.

    1991-01-01

    Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

  20. Subcell Light Current-Voltage Characterization of Irradiated Multijunction Solar Cell

    Directory of Open Access Journals (Sweden)

    Walker Don

    2017-01-01

    Full Text Available The degradation of individual subcell J-V parameters, such as short circuit current, open circuit voltage, fill factor, and power of a GaInP/GaInAs/Ge triple junction solar cell by 1 MeV electrons were derived utilizing the spectral reciprocity relation between electroluminescence and external quantum efficiency. After exposure to a fluence of 1 × 1015 1 MeV electrons, it was observed that up to 67% of the voltage loss is from the middle, GaInAs subcell. Also, the dark saturation current of the Ge and GaInAs subcells increased but a simultaneous decrease in ideality factor caused a reduction of the open circuit voltage. The reduced ideality factor further indicates a change in the primary recombination mechanism.

  1. Voltage-assisted polymer wafer bonding

    International Nuclear Information System (INIS)

    Varsanik, J S; Bernstein, J J

    2012-01-01

    Polymer wafer bonding is a widely used process for fabrication of microfluidic devices. However, best practices for polymer bonds do not achieve sufficient bond strength for many applications. By applying a voltage to a polymer bond in a process called voltage-assisted bonding, bond strength is shown to improve dramatically for two polymers (Cytop™ and poly(methyl methacrylate)). Several experiments were performed to provide a starting point for further exploration of this technique. An optimal voltage range is experimentally observed with a reduction in bonding strength at higher voltages. Additionally, voltage-assisted bonding is shown to reduce void diameter due to bond defects. An electrostatic force model is proposed to explain the improved bond characteristics. This process can be used to improve bond strength for most polymers. (paper)

  2. 3D Printed Electroluminescent Light Panels - FY17

    Data.gov (United States)

    National Aeronautics and Space Administration — Task 1: Construct EL devices using both commercially available inks and MSFC developed inks starting with screen-printing methods as a baseline Task 2:...

  3. Synthesis, characterization and electroluminescence of two highly-twisted non-doped blue light-emitting materials

    Science.gov (United States)

    Gong, Xiaojie; Pan, Yipeng; Xie, Xiang; Tong, Tong; Chen, Runfeng; Gao, Deqing

    2018-04-01

    Two pyrene derivatives, substituted with 2-methylnaphthalene units on 1,3-position and 1,6-position of pyrene backbones, were designed and synthesized. DFT calculation confirmed that the two molecules were highly twisted and the dihedral angles between pyrene backbone and naphthalene unit were over 80°, being attributed to the steric hindrance of ortho-methyl group and the substitution position of pyrene itself. As a result, the intermolecular aggregation was greatly inhibited in the solid state, being beneficial for suppressing the fluorescence quenching. By analyzing the optical and thermal properties, it was found that the π-π conjugation extension could be adjusted and a balance for high fluorescent efficiency and avoiding quenching at the same time could be reached, which may guide the molecular design in the future. The electroluminescence properties of the non-doped devices were enhanced with the double hole-transporting layers by optimizing the energy level matching. The stable blue EL emission, with the Commission Internationaled'Eclairage (CIEx,y) color coordinates of (0.15, 0.13) and (0.15, 0.11) at 7, 8, 9 and 10 V respectively, was obtained.

  4. Study of the electroluminescence of highly stereoregular poly(N-pentenyl-carbazole) for blue and white OLEDs

    Science.gov (United States)

    Liguori, R.; Botta, A.; Pragliola, S.; Rubino, A.; Venditto, V.; Velardo, A.; Aprano, S.; Maglione, M. G.; Prontera, C. T.; De Girolamo Del Mauro, A.; Fasolino, T.; Minarini, C.

    2017-06-01

    The electroluminescence (EL) of isotactic and syndiotactic poly(N-pentenyl-carbazole) (PPK), achieved by coordination polymerization, is studied in order to investigate the interrelation between the polymer tacticity and their physical-chemical properties. The use of these polymers in organic light-emitting diode (OLED) fabrication is also explored. Thermal and x-ray diffraction analyses of PPKs show that the isotactic stereoisomer is semicrystalline, whereas the syndiotactic one is amorphous. Optical analysis of both stereoisomers, carried out on film samples, reveals the presence of two different excimers: ‘sandwich-like’ and ‘partially overlapping’. Nevertheless, the emission intensity ratio between ‘sandwich-like’ and ‘partially overlapping’ excimers is higher in the isotactic than in the syndiotactic stereoisomer. Using the synthesized polymers as OLED emitting layers, the influence of the polymer tacticity on the EL properties of the device is highlighted. In detail, while blue OLEDs are obtained by using the syndiotactic stereoisomer, OLEDs with a multilayer structure fabricated with the isotactic stereoisomer emit white light. The contribution of three different emissions (fluorescence, phosphorescence and electromer emissions) with comparable intensities to the detected white light is discussed.

  5. Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

    Science.gov (United States)

    Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang

    2013-01-23

    Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

  6. Enhancement of hole injection and electroluminescence by ordered Ag nanodot array on indium tin oxide anode in organic light emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Mi, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Mo Yoon, Dang; Kim, Miyoung [Korea Printed Electronics Center, Korea Electronics Technology Institute, Jeollabuk-do, 561-844 (Korea, Republic of); Kim, Chulki; Lee, Taikjin; Hun Kim, Jae; Lee, Seok; Woo, Deokha, E-mail: jmnano00@gmail.com, E-mail: Dockha@kist.re.kr [Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Lim, Si-Hyung [School of Mechanical Systems Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of)

    2014-07-07

    We report the enhancement of hole injection and electroluminescence (EL) in an organic light emitting diode (OLED) with an ordered Ag nanodot array on indium-tin-oxide (ITO) anode. Until now, most researches have focused on the improved performance of OLEDs by plasmonic effects of metal nanoparticles due to the difficulty in fabricating metal nanodot arrays. A well-ordered Ag nanodot array is fabricated on the ITO anode of OLED using the nanoporous alumina as an evaporation mask. The OLED device with Ag nanodot arrays on the ITO anode shows higher current density and EL enhancement than the one without any nano-structure. These results suggest that the Ag nanodot array with the plasmonic effect has potential as one of attractive approaches to enhance the hole injection and EL in the application of the OLEDs.

  7. Investigation of voltage swell mitigation using STATCOM

    International Nuclear Information System (INIS)

    Razak, N A Abdul; Jaafar, S; Hussain, I S

    2013-01-01

    STATCOM is one of the best applications of a self commutated FACTS device to control power quality problems in the distribution system. This project proposed a STATCOM model with voltage control mechanism. DQ transformation was implemented in the controller system to achieve better estimation. Then, the model was used to investigate and analyse voltage swell problem in distribution system. The simulation results show that voltage swell could contaminate distribution network with unwanted harmonic frequencies. Negative sequence frequencies give harmful effects to the network. System connected with proposed STATCOM model illustrates that it could mitigate this problems efficiently.

  8. Analysis of NSTX TF Joint Voltage Measurements

    International Nuclear Information System (INIS)

    Woolley R

    2005-01-01

    This report presents findings of analyses of recorded current and voltage data associated with 72 electrical joints operating at high current and high mechanical stress. The analysis goal was to characterize the mechanical behavior of each joint and thus evaluate its mechanical supports. The joints are part of the toroidal field (TF) magnet system of the National Spherical Torus Experiment (NSTX) pulsed plasma device operating at the Princeton Plasma Physics Laboratory (PPPL). Since there is not sufficient space near the joints for much traditional mechanical instrumentation, small voltage probes were installed on each joint and their voltage monitoring waveforms have been recorded on sampling digitizers during each NSTX ''shot''

  9. Interband cascade light emitting devices based on type-II quantum wells

    International Nuclear Information System (INIS)

    Yang, Rui Q.; Lin, C.H.; Murry, S.J.

    1997-01-01

    The authors discuss physical processes in the newly developed type-II interband cascade light emitting devices, and review their recent progress in the demonstration of the first type-II interband cascade lasers and the observation of interband cascade electroluminescence up to room temperature in a broad mid-infrared wavelength region (extended to 9 μm)

  10. Optical microcavities and enhanced electroluminescence from electroformed Al-Al{sub 2}O{sub 3}-Ag diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hickmott, T. W. [Department of Physics, State University of New York at Albany, Albany, New York 12222 (United States)

    2013-12-21

    Electroluminescence (EL) and electron emission into vacuum (EM) occur when a non-destructive dielectric breakdown of Al-Al{sub 2}O{sub 3}-Ag diodes, electroforming, results in the development of a filamentary region in which current-voltage (I-V) characteristics exhibit voltage-controlled negative resistance. The temperature dependence of I-V curves, EM, and, particularly, EL of Al-Al{sub 2}O{sub 3}-Ag diodes with anodic Al{sub 2}O{sub 3} thicknesses between 12 nm and 30 nm, has been studied. Two filters, a long-pass (LP) filter with transmission of photons with energies less than 3.0 eV and a short-pass (SP) filter with photon transmission between 3.0 and 4.0 eV, have been used to characterize EL. The voltage threshold for EL with the LP filter, V{sub LP}, is ∼1.5 V. V{sub LP} is nearly independent of Al{sub 2}O{sub 3} thickness and of temperature and is 0.3–0.6 V less than the threshold voltage for EL for the SP filter, V{sub SP}. EL intensity is primarily between 1.8 and 3.0 eV when the bias voltage, V{sub S} ≲ 7 V. EL in the thinnest diodes is enhanced compared to EL in thicker diodes. For increasing V{sub S}, for diodes with the smallest Al{sub 2}O{sub 3} thicknesses, there is a maximum EL intensity, L{sub MX}, at a voltage, V{sub LMX}, followed by a decrease to a plateau. L{sub MX} and EL intensity at 4.0 V in the plateau region depend exponentially on Al{sub 2}O{sub 3} thickness. The ratio of L{sub MX} at 295 K for a diode with 12 nm of Al{sub 2}O{sub 3} to L{sub MX} for a diode with 25 nm of Al{sub 2}O{sub 3} is ∼140. The ratio of EL intensity with the LP filter to EL intensity with the SP filter, LP/SP, varies between ∼3 and ∼35; it depends on Al{sub 2}O{sub 3} thickness and V{sub S}. Enhanced EL is attributed to the increase of the spontaneous emission rate of a dipole in a non-resonant optical microcavity. EL photons interact with the Ag and Al films to create surface plasmon polaritons (SPPs) at the metal-Al{sub 2}O

  11. Reduced Voltage Scaling in Clock Distribution Networks

    Directory of Open Access Journals (Sweden)

    Khader Mohammad

    2009-01-01

    Full Text Available We propose a novel circuit technique to generate a reduced voltage swing (RVS signals for active power reduction on main buses and clocks. This is achieved without performance degradation, without extra power supply requirement, and with minimum area overhead. The technique stops the discharge path on the net that is swinging low at a certain voltage value. It reduces active power on the target net by as much as 33% compared to traditional full swing signaling. The logic 0 voltage value is programmable through control bits. If desired, the reduced-swing mode can also be disabled. The approach assumes that the logic 0 voltage value is always less than the threshold voltage of the nMOS receivers, which eliminate the need of the low to high voltage translation. The reduced noise margin and the increased leakage on the receiver transistors using this approach have been addressed through the selective usage of multithreshold voltage (MTV devices and the programmability of the low voltage value.

  12. Voltage-pulse generator for electron gun

    International Nuclear Information System (INIS)

    Korenev, S.A.; Enchevich, I.B.; Mikhov, M.K.

    1987-01-01

    A voltage-pulse generator with combined capacitive and inductive storage devices of an electron gun is described. The current interrupter is a hydrogen thyratron (TGI1-100/8, TGI1-500/16, or TGI1-1000/25) installed in a short magnetic lens. The current interruption time of the thyratrons is 100-300 nsec. When the capacitive storage device is charged to 1 kV, a voltage pulse with an amplitude of 25 kV is obtained at the load

  13. Electroluminescence Caused by the Transport of Interacting Electrons through Parallel Quantum Dots in a Photon Cavity

    Science.gov (United States)

    Gudmundsson, Vidar; Abdulla, Nzar Rauf; Sitek, Anna; Goan, Hsi-Sheng; Tang, Chi-Shung; Manolescu, Andrei

    2018-02-01

    We show that a Rabi-splitting of the states of strongly interacting electrons in parallel quantum dots embedded in a short quantum wire placed in a photon cavity can be produced by either the para- or the dia-magnetic electron-photon interactions when the geometry of the system is properly accounted for and the photon field is tuned close to a resonance with the electron system. We use these two resonances to explore the electroluminescence caused by the transport of electrons through the one- and two-electron ground states of the system and their corresponding conventional and vacuum electroluminescense as the central system is opened up by coupling it to external leads acting as electron reservoirs. Our analysis indicates that high-order electron-photon processes are necessary to adequately construct the cavity-photon dressed electron states needed to describe both types of electroluminescence.

  14. Influence of Exciplex formation on the electroluminescent properties of dimeric Zn (II) bis-2-(2'-hydroxyphenyl) benzoxazole complex and monomeric Zn (II) 2-(1'-hydroxynaphthyl) benzothiazole complex

    Science.gov (United States)

    Prakash, Sattey; Anand, R. S.; Manoharan, S. Sundar

    2011-10-01

    In this paper we present the factors affecting electroluminescent properties of Zinc complexes of oxazole & thiazole derivatives. Electroluminescent spectra of the Zinc (II) complex of bis-[2-(2'-hydroxyphenyl) benzoxazole], [Zn (HPBO)2]2 and 2-(1'-hydroxynaphthyl) benzothiazole [Zn (HNBT)2] show unusual broadening and shows structural and photophysical similarity with [Zn (HPBT)2]2, a dimeric complex. The [Zn (HPBO)2]2 complex as an emissive layer in the device structure ITO /PEDOT:PSS /TPD (30nm) /[Zn (HPBO)2]2 (60nm) /BCP (6nm) /Ca (3nm) /Al (200nm) shows a broad bluish green emission, with a full width at half maxima (FWHM1˜70nm). The EL spectra is much broader compared to the PL spectra because of exciplex formation at the interfacial region between the emissive layer (EML) & hole transport layer (HTL). We also show the device performance of Zinc 2-(1'-hydroxynaphthyl) benzothiazole [Zn (HNBT)2] complex as emissive layer. Distinctly this device shows a broad greenish yellow emission with a peak maxima at 535nm and 690nm, owing to the exciplex formation between electron transport layer (ETL) and emissive layer (EML), which is in sharp contrast to the exciplex formation across the HTL-EML interface observed for the [Zn (HPBO)2]2 complex.

  15. Ion trap device

    Science.gov (United States)

    Ibrahim, Yehia M.; Smith, Richard D.

    2016-01-26

    An ion trap device is disclosed. The device includes a series of electrodes that define an ion flow path. A radio frequency (RF) field is applied to the series of electrodes such that each electrode is phase shifted approximately 180 degrees from an adjacent electrode. A DC voltage is superimposed with the RF field to create a DC gradient to drive ions in the direction of the gradient. A second RF field or DC voltage is applied to selectively trap and release the ions from the device. Further, the device may be gridless and utilized at high pressure.

  16. Electrical latching of microelectromechanical devices

    Science.gov (United States)

    Garcia, Ernest J.; Sleefe, Gerard E.

    2004-11-02

    Methods are disclosed for row and column addressing of an array of microelectromechanical (MEM) devices. The methods of the present invention are applicable to MEM micromirrors or memory elements and allow the MEM array to be programmed and maintained latched in a programmed state with a voltage that is generally lower than the voltage required for electrostatically switching the MEM devices.

  17. Exciton-dominant Electroluminescence from a Diode of Monolayer MoS2

    Science.gov (United States)

    2014-05-14

    injected electrons and holes, is a reliable technique to study exciton recombination processes in monolayer MoS2, including val- ley and spin excitation...temperature. After superimposing a white light scattering image of the de - vice, we find that the electroluminescence is localized at the edge of the...We find the emerged feature (labeled NX) peaks at 550 nm with energy of 2.255 eV. In low dimensional system, like monolayer MoS2, Coulomb interactions

  18. Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Gusev, Oleg; Bresler, Mikhail; Kuznetsov, Alexey; Kudoyarova, Vera; Pak, Petr; Terukov, Evgenii; Tsendin, Konstantin; Yassievich, Irina [A F Ioffe Physico-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation); Fuhs, Walther [Hahn-Meitner Institut, Abteilung Photovoltaik, Rudower Chaussee 5, D-12489 Berlin (Germany); Weiser, Gerhard [Phillips-Universitat Marburg, Fachbereich Physik, D-35032 Marburg (Germany)

    1998-05-11

    We have observed room-temperature erbium-ion electroluminescence in erbium-doped amorphous silicon. Electrical conduction through the structure is controlled by thermally activated ionization of deep D{sup -} defects in an electric field and the reverse process of capture of mobile electrons by D{sup 0} states. Defect-related Auger excitation (DRAE) is responsible for excitation of erbium ions located close to dangling-bond defects. Our experimental data are consistent with the mechanisms proposed

  19. The surface defect-related electroluminescence from the ZnO microwire

    Energy Technology Data Exchange (ETDEWEB)

    Ding Meng; Zhao Dongxu; Yao Bin; Li Binghui; Zhang Zhenzhong; Shan Chongxin; Shen Dezhen, E-mail: dxzhao2000@yahoo.com.cn [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021 (China)

    2011-02-23

    Surface defect-related electroluminescence (EL) was realized from a single ZnO microwire-based metal-semiconductor-metal structure on a glass substrate. ZnO microwires were successfully fabricated using a simple chemical vapour deposition approach. Schottky contacts were detected between Au electrodes and the ZnO microwire. The EL spectrum showed a broad emission band covering the visible range from 400 to 700 nm. The possible EL emission mechanism is discussed in detail in this paper.

  20. Two-phase xenon detector with gas amplification and electroluminescent signal detection

    International Nuclear Information System (INIS)

    Akimov, D.Yu.; Burenkov, A.A.; Grishkin, Yu.L.; Kovalenko, A.G.; Lebedenko, V.N.; Stekhanov, V.N.

    2008-01-01

    An optical technique for detecting ionization electrons produced during ionization of the liquid phase has been experimentally tested in two-phase (liquid-gas) xenon. The effects of gas and electroluminescent amplifications at the wire anode are simultaneously used for detection. This method allows construction of a supersensitive detector of small ionization signals-down to those corresponding to the detection of single electrons [ru

  1. Molding resonant energy transfer by colloidal crystal: Dexter transfer and electroluminescence

    Science.gov (United States)

    González-Urbina, Luis; Kolaric, Branko; Libaers, Wim; Clays, Koen

    2010-05-01

    Building photonic crystals by combination of colloidal ordering and metal sputtering we were able to construct a system sensitive to an electrical field. In corresponding crystals we embedded the Dexter pair (Ir(ppy3) and BAlq) and investigated the influence of the band gap on the resonant energy transfer when the system is excited by light and by an electric field respectively. Our investigations extend applications of photonic crystals into the field of electroluminescence and LED technologies.

  2. A New Asymmetrical Current-fed Converter with Voltage Lifting

    Directory of Open Access Journals (Sweden)

    DELSHAD, M.

    2011-05-01

    Full Text Available This paper presents a new zero voltage switching current-fed DC-DC converter with high voltage gain. In this converter all switches (main and auxiliary turn on under zero voltage switching and turn off under almost zero voltage switching due to snubber capacitor. Furthermore, the voltage spike across the main switch due to leakage inductance of forward transformer is absorbed. The flyback transformer which is connected to the output in series causes to high voltage gain and less voltage stress on the power devices. Considering high efficiency and voltage gain of this converter, it is suitable for green generated systems such as fuel cells or photovoltaic systems. The presented experimental results verify the integrity of the proposed converter.

  3. Localized and guided electroluminescence from roll printed organic nanofibres

    DEFF Research Database (Denmark)

    Tavares, Luciana; Kjelstrup-Hansen, Jakob; Rubahn, Horst-Günter

    2012-01-01

    injection of holes and electrons into the organic material with subsequent charge carrier recombination and light emission from a small area near the metal-nanofibre interface. The polarization results from the mutually parallel ordering of the molecular constituents, in which the emitting dipole......Here, we report localized, polarized, and waveguidedelectroluminescence (EL) from well aligned organic nanofibres integrated via roll printing on transistor platforms. The localized emission is due to the application of an AC voltage to the transistor gate electrodes, which causes sequential...... that this scheme can facilitate EL from a nanofibre made from a different type of molecule with altered spectral characteristics. The realization of an electrically biased organic nanoscale light-emitter demonstrates the ability to fabricate on-chip light sources with tunable emission spectrum via synthesis...

  4. 3D Printing of NinjaFlex Filament onto PEDOT:PSS-Coated Textile Fabrics for Electroluminescence Applications

    Science.gov (United States)

    Tadesse, Melkie Getnet; Dumitrescu, Delia; Loghin, Carmen; Chen, Yan; Wang, Lichuan; Nierstrasz, Vincent

    2018-03-01

    Electroluminescence (EL) is the property of a semiconductor material pertaining to emitting light in response to an electrical current or a strong electric field. The purpose of this paper is to develop a flexible and lightweight EL device. Thermogravimetric analysis (TGA) was conducted to observe the thermal degradation behavior of NinjaFlex. Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid)—PEDOT:PSS—with ethylene glycol (EG) was coated onto polyester fabric where NinjaFlex was placed onto the coated fabric using three-dimensional (3D) printing and phosphor paste, and BendLay filaments were subsequently coated via 3D printing. Adhesion strength and flexibility of the 3D-printed NinjaFlex on textile fabrics were investigated. The TGA results of the NinjaFlex depict no weight loss up to 150°C and that the NinjaFlex was highly conductive with a surface resistance value of 8.5 ohms/sq.; the coated fabric exhibited a uniform surface appearance as measured and observed by using four-probe measurements and scanning electron microscopy, respectively, at 60% PEDOT:PSS. The results of the adhesion test showed that peel strengths of 4160 N/m and 3840 N/m were recorded for polyester and cotton specimens, respectively. No weight loss was recorded following three washing cycles of NinjaFlex. The bending lengths were increased by only a factor of 0.082 and 0.577 for polyester and cotton samples at 0.1-mm thickness, respectively; this remains sufficiently flexible to be integrated into textiles. The prototype device emitted light with a 12-V alternating current power supply.

  5. 2-(2-Hydroxyphenyl)imidazole-based four-coordinate organoboron compounds with efficient deep blue photoluminescence and electroluminescence.

    Science.gov (United States)

    Zhang, Zhenyu; Zhang, Zuolun; Zhang, Hongyu; Wang, Yue

    2017-12-19

    Two new four-coordinate organoboron compounds with 2-(2-hydroxyphenyl)imidazole derivatives as the chelating ligands have been synthesized. They possess high thermal stability and are able to form an amorphous glass state. Crystallographic analyses indicate that the differences in ligand structure cause the change of ππ stacking character. The CH 2 Cl 2 solutions and thin films of these compounds display bright blue emission, and these compounds have appropriate HOMO and LUMO energy levels for carrier injection in OLEDs. By utilizing the good thermal and luminescent properties, as well as the proper frontier orbital energy levels, bright non-doped OLEDs with a simple structure have been realized. Notably, these simple devices show deep blue electroluminescence with the Commission Internationale de l'Éclairage (CIE) coordinate of ca. (0.16, 0.08), which is close to the CIE coordinate of (0.14, 0.08) for standard blue defined by the National Television System Committee. In addition, one of the devices exhibits good performance, showing brightness, current efficiency, power efficiency and external quantum efficiency up to 2692 cd m -2 , 2.50 cd A -1 , 1.81 lm W -1 and 3.63%, respectively. This study not only provides good deep-blue emitting OLED materials that are rarely achieved by using four-coordinate organoboron compounds, but also allows a deeper understanding of the structure-property relationship of 2-(2-hydroxyphenyl)imidazole-based boron complexes, which benefits the further structural design of this type of material.

  6. Synthesis and Electroluminescence Properties of 3-(Trifluoromethylphenyl-Substituted 9,10-Diarylanthracene Derivatives for Blue Organic Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Sang Woo Kwak

    2017-10-01

    Full Text Available Diaryl-substituted anthracene derivatives containing 3-(trifluoromethylphenyl groups, 9,10-diphenyl-2-(3-(trifluoromethylphenylanthracene (1, 9,10-di([1,1′-biphenyl]-4-yl-2-(3-(trifluoromethylphenylanthracene (2, and 9,10-di(naphthalen-2-yl-2-(3-(trifluoromethylphenylanthracene (3 were synthesized and characterized. The compounds 1–3 possessed high thermal stability and proper frontier-energy levels, which make them suitable as host materials for blue organic light-emitting diodes. The electroluminescent (EL emission maximum of the three N,N-diphenylamino phenyl vinyl biphenyl (DPAVBi-doped (8 wt % devices for compounds 1–3 was exhibited at 488 nm (for 1 and 512 nm (for 2 and 3. Among them, the 1-based device displayed the highest device performances in terms of brightness (Lmax = 2153.5 cd·m−2, current efficiency (2.1 cd·A−1, and external quantum efficiency (0.8%, compared to the 2- and 3-based devices.

  7. Technological Aspects: High Voltage

    International Nuclear Information System (INIS)

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered. (author)

  8. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D.C.

    2013-12-16

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  9. Influence of X and gamma radiation and bias conditions on dropout voltage of voltage regulators serial transistors

    International Nuclear Information System (INIS)

    Vukic, V.; Osmokrovic, P.; Stankovic, S.; Kovacevic, M.

    2005-01-01

    Research topic presented in this paper is degradation of characteristics of low-dropout voltage regulator's serial transistor during exposure of device to the ionizing radiation. Voltage regulators were exposed to X and γ radiation in two modes: without bias conditions, and with bias conditions and load. Tested circuits are representatives of the first and the second generation of low-dropout voltage regulators, with lateral and vertical PNP serial transistor: LM2940 and L4940. Experimental results of output voltage and serial dropout voltage change in function of total ionizing dose, during the medium-dose-rate exposure, were presented. (author) [sr

  10. Stray voltage mitigation

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

    2008-04-09

    This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

  11. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  12. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  13. Modelling voltage sag mitigation using dynamic voltage restorer and analyzing power quality issue

    Science.gov (United States)

    Ismail, Nor Laili; Hidzir, Hizrin Dayana Mohd; Thanakodi, Suresh; Nazar, Nazatul Shiema Moh; Ibrahim, Pungut; Ali, Che Ku Muhammad Sabri Che Ku

    2018-02-01

    Power quality problem which are arise due to a fault or a pulsed load can have caused an interruption of critical load. The modern power systems are becoming more sensitive to the quality of the power supplied by the utility company. Voltage sags and swells, flicker, interruptions, harmonic distortion and other distortion to the sinusoidal waveform are the examples of the power quality problems. The most affected due to these problems is industrial customers who use a lot of sensitive equipment. There has suffered a huge loss to these problems. Resulting of broken or damage equipment if voltage sag exceeds the sensitive threshold of the equipment. Thus, device such as Static Synchronous Compensator (STATCOM) and Dynamic Voltage Restorer (DVR) has been created to solve this problem among users. DVR is a custom power device that most effective and efficient. This paper intended to report the DVR operations during voltage sag compensation.

  14. Applied solid state science advances in materials and device research

    CERN Document Server

    Wolfe, Raymond

    2013-01-01

    Applied Solid State Science: Advances in Materials and Device Research, Volume 1 presents articles about junction electroluminescence; metal-insulator-semiconductor (MIS) physics; ion implantation in semiconductors; and electron transport through insulating thin films. The book describes the basic physics of carrier injection; energy transfer and recombination mechanisms; state of the art efficiencies; and future prospects for light emitting diodes. The text then discusses solid state spectroscopy, which is the pair spectra observed in gallium phosphide photoluminescence. The extensive studies

  15. Resonance of magnetization excited by voltage in magnetoelectric heterostructures

    Science.gov (United States)

    Yu, Guoliang; Zhang, Huaiwu; Li, Yuanxun; Li, Jie; Zhang, Dainan; Sun, Nian

    2018-04-01

    Manipulation of magnetization dynamics is critical for spin-based devices. Voltage driven magnetization resonance is promising for realizing low-power information processing systems. Here, we show through Finite Element Method (FEM) simulations that magnetization resonance in nanoscale magnetic elements can be generated by a radio frequency (rf) voltage via the converse magnetoelectric (ME) effect. The magnetization dynamics induced by voltage in a ME heterostructures is simulated by taking into account the magnetoelastic and piezoelectric coupling mechanisms among magnetization, strain and voltage. The frequency of the excited magnetization resonance is equal to the driving rf voltage frequency. The proposed voltage driven magnetization resonance excitation mechanism opens a way toward energy-efficient spin based device applications.

  16. Organic optoelectronics:materials,devices and applications

    Institute of Scientific and Technical Information of China (English)

    LIU Yi; CUI Tian-hong

    2005-01-01

    The interest in organic materials for optoelectronic devices has been growing rapidly in the last two decades. This growth has been propelled by the exciting advances in organic thin films for displays, low-cost electronic circuits, etc. An increasing number of products employing organic electronic devices have become commercialized, which has stimulated the age of organic optoelectronics. This paper reviews the recent progress in organic optoelectronic technology. First, organic light emitting electroluminescent materials are introduced. Next, the three kinds of most important organic optoelectronic devices are summarized, including light emitting diode, organic photovoltaic cell, and photodetectors. The various applications of these devices are also reviewed and discussed in detail. Finally, the market and future development of optoelectronic devices are also demonstrated.

  17. Efficient light emitting devices based on phosphorescent partially doped emissive layers

    KAUST Repository

    Yang, Xiaohui

    2013-05-29

    We report efficient organic light emitting devices employing an ultrathin phosphor emissive layer. The electroluminescent spectra of these devices can be tuned by introducing a low-energy emitting phosphor layer into the emission zone. Devices with the emissive layer consisting of multiple platinum-complex/spacer layer cells show a peak external quantum efficiency of 18.1%, which is among the best EQE values for platinum-complex based light emitting devices. Devices with an ultrathin phosphor emissive layer show stronger luminance decay with the operating time compared to the counterpart devices having a host-guest emissive layer.

  18. Electrostatic MEMS devices with high reliability

    Science.gov (United States)

    Goldsmith, Charles L; Auciello, Orlando H; Sumant, Anirudha V; Mancini, Derrick C; Gudeman, Chris; Sampath, Suresh; Carlilse, John A; Carpick, Robert W; Hwang, James

    2015-02-24

    The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.

  19. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

    Energy Technology Data Exchange (ETDEWEB)

    Calciati, Marco; Vallone, Marco; Zhou, Xiangyu; Ghione, Giovanni [Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino (Italy); Goano, Michele, E-mail: michele.goano@polito.it; Bertazzi, Francesco [Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino (Italy); IEIIT-CNR, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino (Italy); Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico [Dipartimento di Ingegneria dell' Informazione, Università di Padova, Via Gradenigo 6/B, 35131 Padova (Italy); Bellotti, Enrico [Department of Electrical and Computer Engineering, Boston University, 8 Saint Mary' s Street, 02215 Boston, MA (United States); Verzellesi, Giovanni [Dipartimento di Scienze e Metodi dell' Ingegneria, Università di Modena e Reggio Emilia, 42122 Reggio Emilia (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2014-06-15

    Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10{sup −30} cm{sup 6}/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary

  20. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

    Directory of Open Access Journals (Sweden)

    Marco Calciati

    2014-06-01

    Full Text Available Electroluminescence (EL characterization of InGaN/GaN light-emitting diodes (LEDs, coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs. First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i the approximations in the transport description through the multi-quantum-well active region, (ii the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10−30 cm6/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary

  1. Synthesis and electroluminescence characterization of a new aluminum complex, [8-hydroxyquinoline] bis [2, 2'bipyridine] aluminum Al(Bpy)2q

    Science.gov (United States)

    Rahul, Kumar; Ritu, Srivastava; Punita, Singh

    2016-01-01

    We have synthesized and characterized a new electroluminescent material, [8-hydroxyquinoline] bis [2,2'bipyridine] aluminum. A solution of this material Al(Bpy)2q in toluene showed absorption maxima at 380 nm, which was attributed to the moderate energy (π-π*) transitions of the aromatic rings. The photoluminescence spectrum of Al(Bpy)2q in the toluene solution showed a peak at 518 nm. This material shows thermal stability up to 300 °C. The structure of the device is ITO/F4-TCNQ (1 nm)/α-NPD (35 nm)/Al(Bpy)2q (35 nm)/ BCP (6 nm)/Alq3 (28 nm)/LiF (1 nm)/Al (150 nm). This device exhibited a luminescence peak at 515 nm (CIE coordinates, x = 0.32, y = 0.49). The maximum luminescence of the device was 214 cd/m2 at 21 V. The maximum current efficiency of OLED was 0.12 cd/A at 13 V and the maximum power efficiency was 0.03 lm/W at 10 V.

  2. Synthesis and electroluminescence characterization of a new aluminum complex, [8-hydroxyquinoline] bis [2, 2'bipyridine] aluminum Al(Bpy)2q

    International Nuclear Information System (INIS)

    Rahul, Kumar; Ritu, Srivastava; Punita, Singh

    2016-01-01

    We have synthesized and characterized a new electroluminescent material, [8-hydroxyquinoline] bis [2,2'bipyridine] aluminum. A solution of this material Al(Bpy) 2 q in toluene showed absorption maxima at 380 nm, which was attributed to the moderate energy (π–π*) transitions of the aromatic rings. The photoluminescence spectrum of Al(Bpy) 2 q in the toluene solution showed a peak at 518 nm. This material shows thermal stability up to 300 °C. The structure of the device is ITO/F4-TCNQ (1 nm)/α-NPD (35 nm)/Al(Bpy) 2 q (35 nm)/ BCP (6 nm)/Alq 3 (28 nm)/LiF (1 nm)/Al (150 nm). This device exhibited a luminescence peak at 515 nm (CIE coordinates, x = 0.32, y = 0.49). The maximum luminescence of the device was 214 cd/m 2 at 21 V. The maximum current efficiency of OLED was 0.12 cd/A at 13 V and the maximum power efficiency was 0.03 lm/W at 10 V. (paper)

  3. Modeling and simulation of dynamic voltage restorer in power system

    International Nuclear Information System (INIS)

    Abdel Aziz, M.A.A.M.

    2012-01-01

    There are many loads subjected to several Power Quality Problems such as voltage sags/swells, unbalance, harmonics distortion, and short interruption. These loads encompass a wide range of equipment which are very sensitive to voltage disturbances. The Dynamic Voltage Restorer (DVR) has recently been introduced to protect sensitive loads from voltage sags and other voltage disturbances in addition to this, it mitigates current harmonics distortion. It is a series connected power electronic based device. It is considered as one of the most efficient and effective solutions. Its appeal includes smaller size and fast dynamic response to disturbances. This work describes a proposal of the DVR to improve power quality distribution (medium voltage) system. The control of the compensation voltage and harmonics cancellation in the DVR is based on Adaptive Noise Canceling (ANC) technique. Simulation results carried out by PSCAD/EMTDC to investigate the performance of the proposed method.

  4. Triple voltage dc-to-dc converter and method

    Science.gov (United States)

    Su, Gui-Jia

    2008-08-05

    A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

  5. A Quantification of the Energy Savings by Conservation Voltage Reduction

    NARCIS (Netherlands)

    Ellens, W.; Berry, A.; West, S.

    2013-01-01

    The introduction of `Smart grid' technologies in the electricity supply industry has attracted new attention to Conservation Voltage Reduction (CVR). CVR is a method that aims to save energy by reducing the voltage level of the electrical distribution network. However, not all devices consume less

  6. Circuit and method for controlling the threshold voltage of transistors.

    NARCIS (Netherlands)

    2008-01-01

    A control unit, for controlling a threshold voltage of a circuit unit having transistor devices, includes a reference circuit and a measuring unit. The measuring unit is configured to measure a threshold voltage of at least one sensing transistor of the circuit unit, and to measure a threshold

  7. Three-peak standard white organic light-emitting devices for solid-state lighting

    Science.gov (United States)

    Guo, Kunping; Wei, Bin

    2014-12-01

    Standard white organic light-emitting device (OLED) lighting provides a warm and comfortable atmosphere and shows mild effect on melatonin suppression. A high-efficiency red OLED employing phosphorescent dopant has been investigated. The device generates saturated red emission with Commission Internationale de l'Eclairage (CIE) coordinates of (0.66, 0.34), characterized by a low driving voltage of 3.5 V and high external quantum efficiency of 20.1% at 130 cd m-2. In addition, we have demonstrated a two-peak cold white OLED by combining with a pure blue emitter with the electroluminescent emission of 464 nm, 6, 12-bis{[N-(3,4-dimethylpheyl)-N-(2,4,5-trimethylphenyl)]} chrysene (BmPAC). It was found that the man-made lighting device capable of yielding a relatively stable color emission within the luminance range of 1000-5000 cd m-2. And the chromaticity coordinates, varying from (0.25, 0.21) to (0.23, 0.21). Furthermore, an ultrathin layer of green-light-emitting tris (2-phenylpyridinato)iridium(Ⅲ) Ir(ppy)3 in the host material was introduced to the emissive region for compensating light. By appropriately controlling the layer thickness, the white light OLED achieved good performance of 1280 cd m-2 at 5.0 V and 5150 cd m-2 at 7.0 V, respectively. The CIE coordinates of the emitted light are quite stable at current densities from 759 cd m-2 to 5150 cd m-2, ranging from (0.34, 0.37) to (0.33, 0.33).

  8. Electroluminescence from charge transfer states in Donor/Acceptor solar cells

    DEFF Research Database (Denmark)

    Sherafatipour, Golenaz; Madsen, Morten

    Charge photocurrent generation is a key process in solar energy conversion systems. Effective dissociation of the photo-generated electron-hole pairs (excitons) has a strong influence on the efficiency of the organic solar cells. Charge dissociation takes place at the donor/acceptor interface via...... which the maximum open-circuit voltage can be estimated, and further can be used in the modeling and optimization of the OPV devices. [1] C. Deibe, T. Strobe, and V. Dyakonov, “Role of the charge transfer state in organic donor-acceptor solar cells,” Adv. Mater., vol. 22, pp. 4097–4111, 2010. [2] K...... charge transfer (CT) excitons, which is Coulombically bound interfacial electron- hole pairs residing at the donor/acceptor heterojunctions. The CT state represents an intermediate state between the exciton dissociation and recombination back to the ground state. Since the recombination of photo...

  9. White Polymer Light-Emitting Diodes Based on Exciplex Electroluminescence from Polymer Blends and a Single Polymer.

    Science.gov (United States)

    Liang, Junfei; Zhao, Sen; Jiang, Xiao-Fang; Guo, Ting; Yip, Hin-Lap; Ying, Lei; Huang, Fei; Yang, Wei; Cao, Yong

    2016-03-09

    In this Article, we designed and synthesized a series of polyfluorene derivatives, which consist of the electron-rich 4,4'-(9-alkyl-carbazole-3,6-diyl)bis(N,N-diphenylaniline) (TPA-Cz) in the side chain and the electron-deficient dibenzothiophene-5,5-dioxide (SO) unit in the main chain. The resulting copolymer PF-T25 that did not comprise the SO unit exhibited blue light-emission with the Commission Internationale de L'Eclairage coordinates of (0.16, 0.10). However, by physically blending PF-T25 with a blue light-emitting SO-based oligomer, a novel low-energy emission correlated to exciplex emerged due to the appropriate energy level alignment of TPA-Cz and the SO-based oligomers, which showed extended exciton lifetime as confirmed by time-resolved photoluminescent spectroscopy. The low-energy emission was also identified in copolymers consisting of SO unit in the main chain, which can effectively compensate for the high-energy emission to produce binary white light-emission. Polymer light-emitting diodes based on the exciplex-type single greenish-white polymer exhibit the peak luminous efficiency of 2.34 cd A(-1) and the maximum brightness of 12 410 cd m(-2), with Commission Internationale de L'Eclairage color coordinates (0.27, 0.39). The device based on such polymer showed much better electroluminescent stability than those based on blending films. These observations indicated that developing a single polymer with the generated exciplex emission can be a novel and effective molecular design strategy toward highly stable and efficient white polymer light-emitting diodes.

  10. Method and device for ion mobility separations

    Science.gov (United States)

    Ibrahim, Yehia M.; Garimella, Sandilya V. B.; Smith, Richard D.

    2017-07-11

    Methods and devices for ion separations or manipulations in gas phase are disclosed. The device includes a single non-planar surface. Arrays of electrodes are coupled to the surface. A combination of RF and DC voltages are applied to the arrays of electrodes to create confining and driving fields that move ions through the device. The DC voltages are static DC voltages or time-dependent DC potentials or waveforms.

  11. Preparation and characterization of electroluminescent devices based on complexes of {beta}-diketonates of Tb{sup 3+}, Eu{sup 3+}, Gd{sup 3+} ions with macrocyclic ligands and UO{sub 2}{sup 2+} films; Preparacao e caracterizacao de dispositivos eletroluminescentes de complexos de {beta}-dicetonados de ions Tb{sup 3+}, Eu{sup 3+}, Gd{sup 3+} com ligantes macrociclicos e filmes de UO{sub 2}{sup 2+}

    Energy Technology Data Exchange (ETDEWEB)

    Gibelli, Edison Bessa

    2010-07-01

    Complexes containing Rare Earth ions are of great interest in the manufacture of electro luminescent devices as organic light emitting devices (OLED). These devices, using rare earth trivalent ions (TR{sup 3+}) as emitting centers, show high luminescence with extremely fine spectral bands due to the structure of their energy levels, long life time and high quantum efficiency. This work reports the preparation of Rare Earth {beta}-diketonate complexes (Tb{sup 3+}, Eu{sup 3+} and Gd{sup 3+}) and (tta - thenoyltrifluoroacetonate and acac - acetylacetonate) containing a ligand macrocyclic crown ether (DB18C6 - dibenzo18coroa6) and polymer films of UO{sub 2}{sup 2+}. The materials were characterized by complexometric titration with EDTA, CH elemental analysis, near infrared absorption spectroscopy, thermal analysis, X-ray diffraction (powder method) and luminescence spectroscopy. For manufacturing the OLED it was used the technique of deposition of thin films by physical vapor (PVD, Physical Vapor Deposition). (author)

  12. Optical control system for high-voltage terminals

    International Nuclear Information System (INIS)

    Bicek, J.J.

    1978-01-01

    An optical control system for the control of devices in the terminal of an electrostatic accelerator includes a laser that is modulated by a series of preselected codes produced by an encoder. A photodiode receiver is placed in the laser beam at the high-voltage terminal of an electrostatic accelerator. A decoder connected to the photodiode decodes the signals to provide control impulses for a plurality of devices at the high voltage of the terminal

  13. Graphene device and method of using graphene device

    Science.gov (United States)

    Bouchiat, Vincent; Girit, Caglar; Kessler, Brian; Zettl, Alexander K.

    2015-08-11

    An embodiment of a graphene device includes a layered structure, first and second electrodes, and a dopant island. The layered structure includes a conductive layer, an insulating layer, and a graphene layer. The electrodes are coupled to the graphene layer. The dopant island is coupled to an exposed surface of the graphene layer between the electrodes. An embodiment of a method of using a graphene device includes providing the graphene device. A voltage is applied to the conductive layer of the graphene device. Another embodiment of a method of using a graphene device includes providing the graphene device without the dopant island. A dopant island is placed on an exposed surface of the graphene layer between the electrodes. A voltage is applied to the conductive layer of the graphene device. A response of the dopant island to the voltage is observed.

  14. Quantification of Solar Cell Failure Signatures Based on Statistical Analysis of Electroluminescence Images

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Parikh, Harsh; Hacke, Peter

    2017-01-01

    We demonstrate a method to quantify the extent of solar cell cracks, shunting, or damaged cell interconnects, present in crystalline silicon photovoltaic (PV) modules by statistical analysis of the electroluminescence (EL) intensity distributions of individual cells within the module. From the EL...... intensity distributions (ELID) of each cell, we calculated summary statistics such as standard deviation, median, skewness and kurtosis, and analyzed how they correlate with the magnitude of the solar cell degradation. We found that the dispersion of the ELID increases with the size and severity...

  15. Quantification of solar cell failure signatures based on statistical analysis of electroluminescence images

    DEFF Research Database (Denmark)

    Spataru, Sergiu; Parikh, Harsh; Benatto, Gisele Alves dos Reis

    2017-01-01

    We propose a method to identify and quantify the extent of solar cell cracks, shunting, or damaged cell interconnects, present in crystalline silicon photovoltaic (PV) modules by statistical analysis of the electroluminescence (EL) intensity distributions of individual cells within the module. From...... the EL intensity distributions (ELID) of each cell, we calculated summary statistics such as standard deviation, median, skewness and kurtosis, and analyzed how they correlate with the type of the solar cell degradation. We found that the dispersion of the ELID increases with the size and severity...

  16. Molecular-scale simulation of electroluminescence in a multilayer white organic light-emitting diode

    DEFF Research Database (Denmark)

    Mesta, Murat; Carvelli, Marco; de Vries, Rein J

    2013-01-01

    we show that it is feasible to carry out Monte Carlo simulations including all of these molecular-scale processes for a hybrid multilayer organic light-emitting diode combining red and green phosphorescent layers with a blue fluorescent layer. The simulated current density and emission profile......In multilayer white organic light-emitting diodes the electronic processes in the various layers--injection and motion of charges as well as generation, diffusion and radiative decay of excitons--should be concerted such that efficient, stable and colour-balanced electroluminescence can occur. Here...

  17. First observation of liquid-xenon proportional electroluminescence in THGEM holes

    International Nuclear Information System (INIS)

    Arazi, L; Itay, R; Landsman, H; Levinson, L; Pasmantirer, B; Rappaport, M L; Vartsky, D; Breskin, A; Coimbra, A E C

    2013-01-01

    Radiation-induced proportional-electroluminescence UV signals, emitted from the holes of a Thick Gas Electron Multiplier (THGEM) electrode immersed in liquid xenon, were recorded with a PMT for the first time. Significant photon yields were observed with gamma photons and alpha particles using a 0.4 mm thick electrode with 0.3 mm diameter holes; at 2 kV across the THGEM the photon yield was estimated to be ∼ 600 UV photons/electron over 4π. This may pave the way towards the realization of novel single-phase noble-liquid radiation detectors incorporating liquid hole-multipliers (LHM); their concept is presented

  18. Use of gas mixture electroluminescence for optical data readout from wire chambers

    International Nuclear Information System (INIS)

    Polyakov, V.A.; Rykalin, V.I.; Tskhadadze, Eh.G.

    1988-01-01

    The radiation spectra, the values of electroluminescence yield and coefficients of gas amplification of Ar and Ne mixture with inorganic and organic additions in a wire chamber operating under proportional and self-quenching streamer conditions are measured. Maximum light yield: 2x10 7 photons for Ar+acetone+white spirit gas mixture in a proportional regime and 1.1x10 7 photons for Ar+CO 2 + ethyl alcohol+ white spirit in self-quenching streamer regime is obtained. Three methods of optical data readout from the wire chambers are tested. The best results are obtained when spectrum shifting bands and fibers are placed behind the chamber cathode planes

  19. Study on the visibility of an electroluminescent display for automobiles; Jidoshayo EL display no shininsei

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, N; Harada, M; Idogaki, T [Denso Corp., Aichi (Japan)

    1997-10-01

    This report explores the visibility of an Electroluminescent (EL) display for automotive use. Displays for automobiles are exposed to the direct rays of the sun and forced to operate in wide temperature range. Therefore, luminous flux density by the lighting on EL display panel and operating environment temperature must be considered for the visibility evaluation. Sensory evaluation on the visibility and physical measurements such as contrast, chromaticity difference in accordance with the viewing angle change indicate that the visibility of the EL display for automobiles is advantageous over other displays. 6 refs., 11 figs., 1 tab.

  20. Electroluminescence Analysis by Tilt Polish Technique of InP-Based Semiconductor Lasers

    Science.gov (United States)

    Ichikawa, Hiroyuki; Sasaki, Kouichi; Hamada, Kotaro; Yamaguchi, Akira

    2010-03-01

    We developed an effective electroluminescence (EL) analysis method to specify the degraded region of InP-based semiconductor lasers. The EL analysis method is one of the most important methods for failure analysis. However, EL observation was difficult because opaque electrodes surround an active layer. A portion of each electrode had to be left intact for wiring to inject the current. Thus, we developed a partial polish technique for the bottom electrode. Tilt polish equipment with a rotating table was introduced; a flat polished surface and a sufficiently wide remaining portion of the bottom electrode were obtained. As a result, clear EL from the back surface of the laser was observed.

  1. based dynamic voltage restorer

    African Journals Online (AJOL)

    HOD

    operation due to presence of increased use of nonlinear loads (computers, microcontrollers ... simulations of a dynamic voltage restorer (DVR) was achieved using MATLAB/Simulink. ..... using Discrete PWM generator, then the IGBT inverter.

  2. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  3. Technique and Calculation Results of Currents and Voltages in the Circuits of the Measuring Element of the Protection Device of the Transmission Line Based on the Control of Transient Processes

    Science.gov (United States)

    Lachugin, V. F.; Kulikov, A. L.; Platonov, P. S.; Vucolov, V. Yu.

    2017-12-01

    The specifics of generation of the signals of current and voltage in the circuits of a directional element of wave relay protection during short circuit (SC) in overhead power transmission lines are considered. The computing method of transient processes in the protection circuits, including frequency filters, that attenuate the parameters of currents and voltages of the mode taking into account the higher harmonic components and probable deviations of the frequency of transmission line from the rated value is presented. It is revealed that it is advisable to implement the measuring circuits of the directional elements of wave relay protection with the three-section filter attenuating the frequencies from 45 to 55 Hz and the low pass filter with cutoff frequency that does not exceed 1 kHz.

  4. A detailed comparison of system topologies for dynamic voltage restorers

    DEFF Research Database (Denmark)

    Nielsen, J.G.; Blaabjerg, Frede

    2005-01-01

    of energy storage, with energy taken from the grid during the voltage sag, and two topologies that take energy from stored energy devices during the voltage sag. Experimental tests using a 10-kVA DVR show that the no-energy storage concept is feasible, but an improved performance can be achieved for certain...... voltage sags using stored energy topologies. The results of this comparison rank the no-storage topology with a passive shunt converter on the load side first, followed by the stored energy topology with a constant dc-link voltage....

  5. CMOS-compatible high-voltage integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Parpia, Z

    1988-01-01

    Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

  6. Synthesis, structures, and electroluminescent properties of scandium N,O-chelated complexes toward near-white organic light-emitting diodes.

    Science.gov (United States)

    Katkova, Marina A; Balashova, Tatyana V; Ilichev, Vasilii A; Konev, Alexey N; Isachenkov, Nikolai A; Fukin, Georgy K; Ketkov, Sergey Yu; Bochkarev, Mikhail N

    2010-06-07

    Three members of a new class of electroluminescent, neutral, and monomeric scandium N,O-chelate complexes, namely, Sc(III)-tris-2-(2-benzoimidazol-2-yl)phenolate (1), Sc(III)-tris-2-(2-benzoxyazol-2-yl)phenolate (2), and Sc(III)-tris-2-(2-benzothiazol-2-yl)phenolate (3), have been prepared and X-ray characterized. DFT calculations have been performed. In contrast to the most frequently applied dual or multiple dopants in multilayer white OLED devices, all our simpler devices with the configuration of indium tin oxide/N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine/neat scandium complex/Yb exhibit close to near-white emission with a blue hue (CIE(x,y) = 0.2147, 0.2379) in the case of 1, a cyan hue (0.2702, 0.3524) in the case of 2, and a yellowish hue (0.3468; 0.4284) in the case of 3.

  7. Solid immersion lenses for enhancing the optical resolution of thermal and electroluminescence mapping of GaN-on-SiC transistors

    International Nuclear Information System (INIS)

    Pomeroy, J. W.; Kuball, M.

    2015-01-01

    Solid immersion lenses (SILs) are shown to greatly enhance optical spatial resolution when measuring AlGaN/GaN High Electron Mobility Transistors (HEMTs), taking advantage of the high refractive index of the SiC substrates commonly used for these devices. Solid immersion lenses can be applied to techniques such as electroluminescence emission microscopy and Raman thermography, aiding the development device physics models. Focused ion beam milling is used to fabricate solid immersion lenses in SiC substrates with a numerical aperture of 1.3. A lateral spatial resolution of 300 nm is demonstrated at an emission wavelength of 700 nm, and an axial spatial resolution of 1.7 ± 0.3 μm at a laser wavelength of 532 nm is demonstrated; this is an improvement of 2.5× and 5×, respectively, when compared with a conventional 0.5 numerical aperture objective lens without a SIL. These results highlight the benefit of applying the solid immersion lenses technique to the optical characterization of GaN HEMTs. Further improvements may be gained through aberration compensation and increasing the SIL numerical aperture

  8. Characterization of UV-enhanced SiPMs for Imaging in High Pressure Xenon Electroluminescent TPC

    International Nuclear Information System (INIS)

    Yahlali, Nadia; Lorca, David; Fernandes, L.M.P.

    2013-06-01

    The possibility of recording charged particle tracks in an electro-luminescent xenon gas TPC is investigated using a SiPM-based tracking system, operated in the demonstrator prototype of the NEXT-100 ββ decay experiment. The tracks of the ββ0ν events from the decay of the 136 Xe isotope have a distinctive topology, which allows their discrimination against single-electron events from the natural radioactivity that populates the region of interest of the neutrinoless decay in the ββ energy spectrum. Combined to the near-intrinsic energy resolution of the gaseous detector, this tracking capability provides a powerful background rejection tool for the search of the neutrinoless ββ decay aimed by the experiment. The NEXT-100 detector concepts and sensitivity and the first results of its demonstrator prototype are presented. The characterization studies relevant for the operation of UV-enhanced SiPMs used for imaging in an electro-luminescent TPC are reviewed. (authors)

  9. Enhanced electroluminescence of organic light-emitting diodes by using halloysite nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Mondragón, Margarita, E-mail: mmondragon@ipn.mx [Instituto Politécnico Nacional, ESIME Azcapotzalco, Av. de las Granjas 682, 02250 México D.F. (Mexico); Moggio, Ivana; León, Arxel de; Arias, Eduardo [Centro de Investigación en Química Aplicada, CIQA, Blvd. Enrique Reyna 140, 25253 Saltillo, Coahuila (Mexico)

    2013-12-15

    The effect of halloysite clay nanotubes (HNTs) on the optical and electronic properties of poly(2-methoxy-5-[2′-ethylhexyloxy]-1,4-phenylenevinylene) (MEH-PPV) have been investigated. The UV–vis absorption band of the conjugated polymer remains unchanged upon the incorporation of halloysite nanotubes (HNTs). Photoluminescence (PL) measurements reveal a decreased quantum yield in the MEH-PPV/HNTs nanocomposites, compared with bulk MEH-PPV. Improvement of the electroluminescence of organic light-emitting diodes (OLEDs) was achieved by incorporating high contents of HNTs. The nanotubes act to enhanced polymer aggregates, as revealed by AFM analysis, thus increasing charge transport and therefore electroluminescence but also decreasing PL quantum yield. -- Highlights: • Thin films of nanocomposites of MEH-PPV/HNTs were prepared by spin coating. • Quantum yield in the nanocomposites was decreased compared with bulk MEH-PPV. • Improvement of the EL of OLEDs was achieved by incorporating high contents of HNTs. • The HNTs act to enhanced polymer aggregates, as revealed by AFM.

  10. Enhanced electroluminescence of organic light-emitting diodes by using halloysite nanotubes

    International Nuclear Information System (INIS)

    Mondragón, Margarita; Moggio, Ivana; León, Arxel de; Arias, Eduardo

    2013-01-01

    The effect of halloysite clay nanotubes (HNTs) on the optical and electronic properties of poly(2-methoxy-5-[2′-ethylhexyloxy]-1,4-phenylenevinylene) (MEH-PPV) have been investigated. The UV–vis absorption band of the conjugated polymer remains unchanged upon the incorporation of halloysite nanotubes (HNTs). Photoluminescence (PL) measurements reveal a decreased quantum yield in the MEH-PPV/HNTs nanocomposites, compared with bulk MEH-PPV. Improvement of the electroluminescence of organic light-emitting diodes (OLEDs) was achieved by incorporating high contents of HNTs. The nanotubes act to enhanced polymer aggregates, as revealed by AFM analysis, thus increasing charge transport and therefore electroluminescence but also decreasing PL quantum yield. -- Highlights: • Thin films of nanocomposites of MEH-PPV/HNTs were prepared by spin coating. • Quantum yield in the nanocomposites was decreased compared with bulk MEH-PPV. • Improvement of the EL of OLEDs was achieved by incorporating high contents of HNTs. • The HNTs act to enhanced polymer aggregates, as revealed by AFM

  11. Self-scaling minority carrier lifetime imaging using periodically modulated electroluminescence

    Science.gov (United States)

    Kropp, Timo; Berner, Marcel; Werner, Jürgen H.

    2017-11-01

    We present a straightforward self-scaling imaging technique to extract the effective minority carrier lifetime image of silicon solar cells using periodically modulated electroluminescence. This novel modulation technique overcomes main limiting factors linked to camera integration time. Our approach is based on comparing three luminescence images taken during current modulation. One image is taken while periodically injecting excess charge carriers with a pulsed current stimulation followed by an open-circuit luminescence decay. A second image with the same injection profile is taken while additionally extracting excess charge carriers at the falling edge, accelerating the luminescence decay. Both images are normalized to a steady-state image. The camera integration time is several orders of magnitude longer than the modulation period length, and no synchronization of image acquisition is needed. The intensity difference between both modulated images is used for determining a calibration factor to convert the steady-state image into the effective minority carrier lifetime image: Our modulation method enables carrier lifetime images completely independent of the image integration time. First carrier lifetime images show good agreement with data from time resolved electroluminescence.

  12. Conservation voltage regulation (CVR) applied to energy savings by voltage-adjusting equipment through AMI

    Science.gov (United States)

    Lan, B.-R.; Chang, C.-A.; Huang, P.-Y.; Kuo, C.-H.; Ye, Z.-J.; Shen, B.-C.; Chen, B.-K.

    2017-11-01

    Conservation voltage reduction (CVR) includes peak demand reduction, energy conservation, carbon emission reduction, and electricity bill reduction. This paper analyzes the energy-reduction of Siwei Feeders with applying CVR, which are situated in Penghu region and equipped with smart meters. Furthermore, the applicable voltage reduction range for the feeders will be explored. This study will also investigate how the CVR effect and energy conservation are improved with the voltage control devices integrated. The results of this study can serve as a reference for the Taiwan Power Company to promote and implement voltage reduction and energy conservation techniques. This study is expected to enhance the energy-reduction performance of the Penghu Low Carbon Island Project.

  13. Mitigating voltage lead errors of an AC Josephson voltage standard by impedance matching

    Science.gov (United States)

    Zhao, Dongsheng; van den Brom, Helko E.; Houtzager, Ernest

    2017-09-01

    A pulse-driven AC Josephson voltage standard (ACJVS) generates calculable AC voltage signals at low temperatures, whereas measurements are performed with a device under test (DUT) at room temperature. The voltage leads cause the output voltage to show deviations that scale with the frequency squared. Error correction mechanisms investigated so far allow the ACJVS to be operational for frequencies up to 100 kHz. In this paper, calculations are presented to deal with these errors in terms of reflected waves. Impedance matching at the source side of the system, which is loaded with a high-impedance DUT, is proposed as an accurate method to mitigate these errors for frequencies up to 1 MHz. Simulations show that the influence of non-ideal component characteristics, such as the tolerance of the matching resistor, the capacitance of the load input impedance, losses in the voltage leads, non-homogeneity in the voltage leads, a non-ideal on-chip connection and inductors between the Josephson junction array and the voltage leads, can be corrected for using the proposed procedures. The results show that an expanded uncertainty of 12 parts in 106 (k  =  2) at 1 MHz and 0.5 part in 106 (k  =  2) at 100 kHz is within reach.

  14. Ion peak narrowing by applying additional AC voltage (ripple voltage) to FAIMS extractor electrode.

    Science.gov (United States)

    Pervukhin, Viktor V; Sheven, Dmitriy G

    2010-01-01

    The use of a non-uniform electric field in a high-field asymmetric waveform ion mobility spectrometry (FAIMS) analyzer increases sensitivity but decreases resolution. The application of an additional AC voltage to the extractor electrode ("ripple" voltage, U(ripple)) can overcome this effect, which decreases the FAIMS peak width. In this approach, the diffusion ion loss remains minimal in the non-uniform electric field in the cylindrical part of the device, and all ion losses under U(ripple) occur in a short portion of their path. Application of the ripple voltage to the extractor electrode is twice as efficient as the applying of U(ripple) along the total length of the device. 2010 American Society for Mass Spectrometry. Published by Elsevier Inc. All rights reserved.

  15. Electroluminescence in quantum well heterostructures p-Al{sub x}Ga{sub 1-x}As/GaAs{sub 1-y}P{sub y}/n-Al{sub x}Ga{sub 1-x}As under uniaxial stress

    Energy Technology Data Exchange (ETDEWEB)

    Berman, Irina V. [Physics Department, San Jose State University, CA (United States); Bogdanov, Evgeniy V.; Minina, Natalia Ya.; Shirokov, Stanislav S.; Yunovich, Alexander E. [Physics Department, Lomonosov Moscow State University (Russian Federation); Kissel, Heiko [R and D Department, DILAS Diodenlaser GmbH, (Germany)

    2009-03-15

    We present new results on the influence of uniaxial stress up to P=4 kbar on the electroluminescence spectra and current-voltage characteristics of p-Al{sub x}Ga{sub 1-x}As/GaAs{sub 1-y}P{sub y}/n-Al{sub x}Ga{sub 1-x}As double heterostructures usually used in TM emitting 808 nm high-power diode lasers. With increasing stress, the emission spectra demonstrate a blue shift of up to 25 meV at a pressure of P=4 kbar, while the electroluminescence intensity increases under compression. The different behavior of the current-voltage characteristics under uniaxial stress along[110] and[1 anti 10] directions is mainly determined by the arising piezoelectric field. The results are also discussed in terms of changes in the band structure under uniaxial compression. The construction of the cryostat for optical measurements under uniaxial stress at liquid nitrogen temperature is described in the paper. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Microwave integrated circuit for Josephson voltage standards

    Science.gov (United States)

    Holdeman, L. B.; Toots, J.; Chang, C. C. (Inventor)

    1980-01-01

    A microwave integrated circuit comprised of one or more Josephson junctions and short sections of microstrip or stripline transmission line is fabricated from thin layers of superconducting metal on a dielectric substrate. The short sections of transmission are combined to form the elements of the circuit and particularly, two microwave resonators. The Josephson junctions are located between the resonators and the impedance of the Josephson junctions forms part of the circuitry that couples the two resonators. The microwave integrated circuit has an application in Josephson voltage standards. In this application, the device is asymmetrically driven at a selected frequency (approximately equal to the resonance frequency of the resonators), and a d.c. bias is applied to the junction. By observing the current voltage characteristic of the junction, a precise voltage, proportional to the frequency of the microwave drive signal, is obtained.

  17. Voltage control of cavity magnon polariton

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, S., E-mail: kaurs3@myumanitoba.ca; Rao, J. W.; Gui, Y. S.; Hu, C.-M., E-mail: hu@physics.umanitoba.ca [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada); Yao, B. M. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, Manitoba R3T 2N2 (Canada); National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

    2016-07-18

    We have experimentally investigated the microwave transmission of the cavity-magnon-polariton (CMP) generated by integrating a low damping magnetic insulator onto a 2D microwave cavity. The high tunability of our planar cavity allows the cavity resonance frequency to be precisely controlled using a DC voltage. By appropriately tuning the voltage and magnetic bias, we can observe the cavity photon magnon coupling and the magnetic coupling between a magnetostatic mode and the generated CMP. The dispersion of the generated CMP was measured by either tuning the magnetic field or the applied voltage. This electrical control of CMP may open up avenues for designing advanced on-chip microwave devices that utilize light-matter interaction.

  18. Development of High-Temperature, High-Power, High-Efficiency, High-Voltage Converters Using Silicon Carbide (SiC) Delivery Order 0003: SiC High Voltage Converters, N-Type Ohmic Contract Development for SiC Power Devices

    National Research Council Canada - National Science Library

    Cheng, Lin; Mazzola, Michael S

    2006-01-01

    ... ? SiC interfaces and silicide top surfaces is important for producing uniformly low contact resistances to achieve device operation at high-current levels without hot spot formation and contact degradation...

  19. Influence of annealing temperature on erbium ion electroluminescence in Si : (Er,O) diodes with (111) substrate orientation

    CERN Document Server

    Sobolev, N A; Nikolaev, Y A

    2001-01-01

    A study has been made of the influence of temperature of the second annealing that promotes formation of optically and electrically active centers o the erbium ion electroluminescence at lambda approx = 1.54 mu m wavelength in (111) Si : (Er,O) diodes. Doping has been performed by implantation of erbium and oxygen ions at 2.0, 1.6 MeV and 0.28, 0.22 MeV energies and 3 x 10 sup 1 sup 4 cm sup - sup 2 and 3 x 10 sup 1 sup 5 cm sup - sup 2 doses, respectively. The room temperature electroluminescence intensity under the breakdown regime increases with increasing annealing temperature from 700 to 950 deg C. After annealing in the range of 975-1100 deg C, erbium electroluminescence under the breakdown regime is not observed due to appearance of microplasmas. The injection electroluminescence intensity at 80 K decreases with increasing temperature from 700 to 1100 deg C

  20. Electroluminescence of colloidal quasi-two-dimensional semiconducting CdSe nanostructures in a hybrid light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Selyukov, A. S., E-mail: vslebedev.mobile@gmail.com; Vitukhnovskii, A. G.; Lebedev, V. S.; Vashchenko, A. A. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Vasiliev, R. B.; Sokolikova, M. S. [Moscow State University (Russian Federation)

    2015-04-15

    We report on the results of studying quasi-two-dimensional nanostructures synthesized here in the form of semiconducting CdSe nanoplatelets with a characteristic longitudinal size of 20–70 nm and a thick-ness of a few atomic layers. Their morphology is studied using TEM and AFM and X-ray diffraction analysis; the crystal structure and sizes are determined. At room and cryogenic temperatures, the spectra and kinetics of the photoluminescence of such structures (quantum wells) are investigated. A hybrid light-emitting diode operating on the basis of CdSe nanoplatelets as a plane active element (emitter) is developed using the organic materials TAZ and TPD to form electron and hole transport layers, respectively. The spectral and current-voltage characteristics of the constructed device with a radiation wavelength λ = 515 nm are obtained. The device triggering voltage is 5.5 V (visible glow). The use of quasi-two-dimensional structures of this type is promising for hybrid light-emitting diodes with pure color and low operating voltages.