WorldWideScience

Sample records for voltage divider circuits

  1. An Internal ALD-Based High Voltage Divider and Signal Circuit for MCP-based Photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Adams, Bernhard W.; Elagin, Andrey; Elam, Jeffrey W.; Frisch, Henry J.; Genat, Jean-Francois; Gregar, Joseph S.; Mane, Anil U.; Minot, Michael J.; Northrup, Richard; Obaid, Razib; Oberla, Eric; Alexander, Vostrikov; Wetstein, Matthew

    2015-04-21

    We describe a pin-less design for the high voltage (HV) resistive divider of the all-glass LAPPD (TM) 8 in,square thin photodetector module. The divider, which distributes high voltage applied to the photocathode to the two micro-channel plates (MCPs) that constitute the amplification stage, is comprised of the two MCPs and three glass mechanical spacers, each of which is coated with a resistive layer using atomic layer deposition (ALD). The three glass grid spacers and the two MCPs form a continuous resistive path between cathode and anode, with the voltages across the MCPs and the spacers determined by the resistance of each. High voltage is applied on an external tab on the top glass window that connects to the photocathode through the metal seal. The DC ground is supplied by microstrips on the bottom glass plate that form the high-bandwidth anode. The microstrips exit the package through the glass-frit seal of the anode base-plate and the package sidewall. The divider is thus completely internal, with no HV pins penetrating the low-profile flat glass package. Measurements of the performance of the divider are presented for the 8 in.-square MCP and spacer package in a custom test fixture and for an assembled externally pumped LAPPD (TM) prototype with an aluminum photocathode. (C) 2015 Elsevier B.V. All rights reserved.

  2. Numerical Electric Field Analysis of Power Status Sensor Observing Power Distribution System Taking into Account Voltage Divider Measurement Circuit

    Science.gov (United States)

    Kubo, Takuro; Furukawa, Tatsuya; Itoh, Hideaki; Fukumoto, Hisao; Wakuya, Hiroshi; Ohchi, Masashi

    We have proposed and preproducted the voltage-current waveform sensor of resin molded type for measuring the power factor and harmonics in power distribution systems. We have executed numerical electromagnetic analyses using the finite element method to estimate the characteristics and behaviours of the sensor. Although the magnetic field analyses for the current sensor have involved the measurement circuit, the electric field analyses have not included the measurement circuit for measuring voltage waveforms of power lines. In this paper, we describe the electric field analyses with the measurement circuit and prove the insulating strength of the proposed sensor permissible to the use in 22kV power distribution systems.

  3. Accurate Switched-Voltage voltage averaging circuit

    OpenAIRE

    金光, 一幸; 松本, 寛樹

    2006-01-01

    Abstract ###This paper proposes an accurate Switched-Voltage (SV) voltage averaging circuit. It is presented ###to compensated for NMOS missmatch error at MOS differential type voltage averaging circuit. ###The proposed circuit consists of a voltage averaging and a SV sample/hold (S/H) circuit. It can ###operate using nonoverlapping three phase clocks. Performance of this circuit is verified by PSpice ###simulations.

  4. Inductive voltage divider modeling in Matlab

    Science.gov (United States)

    Andreev, S. A.; Kim, V. L.

    2017-01-01

    Inductive voltage dividers have the most appropriate metrological characteristics on alternative current and are widely used for converting physical signals. The model of a double-decade inductive voltage divider was designed with the help of Matlab/Simulink. The first decade is an inductive voltage divider with balanced winding, the second decade is a single-stage inductive voltage divider. In the paper, a new transfer function algorithm was given. The study shows errors and differences that appeared between the third degree reduced model and a twenty degree unreduced model. The obtained results of amplitude error differ no more than by 7 % between the reduced and unreduced model.

  5. Fast frequency divider circuit using combinational logic

    Science.gov (United States)

    Helinski, Ryan

    2017-05-30

    The various technologies presented herein relate to performing on-chip frequency division of an operating frequency of a ring oscillator (RO). Per the various embodiments herein, a conflict between RO size versus operational frequency can be addressed by dividing the output frequency of the RO to a frequency that can be measured on-chip. A frequency divider circuit (comprising NOR gates and latches, for example) can be utilized in conjunction with the RO on the chip. In an embodiment, the frequency divider circuit can include a pair of latches coupled to the RO to facilitate dividing the oscillating frequency of the RO by 2. In another embodiment, the frequency divider circuit can include four latches (operating in pairs) coupled to the RO to facilitate dividing the oscillating frequency of the RO by 4. A plurality of ROs can be MUXed to the plurality of ROs by a single oscillation-counting circuit.

  6. HIGH VOLTAGE SMALL – SIZED ALTERNATIVE CURRENT RESISTIVE DIVIDERS FROM MICROWIRE

    Directory of Open Access Journals (Sweden)

    Berzan V.P.

    2011-04-01

    Full Text Available The paper discusses the design parameters and characteristics of the new product, the resistive voltage divider produced from microwire for measuring high-voltage alternating current. Resistive dividers are designed for use in AC circuits and power-frequency electric traction network traffic. Dividers have smaller mass-dimensional size compared with the measuring voltage transformers and higher accuracy class 0.2 at a fixed frequency.

  7. Sequential circuit design for radiation hardened multiple voltage integrated circuits

    Science.gov (United States)

    Clark, Lawrence T.; McIver, III, John K.

    2009-11-24

    The present invention includes a radiation hardened sequential circuit, such as a bistable circuit, flip-flop or other suitable design that presents substantial immunity to ionizing radiation while simultaneously maintaining a low operating voltage. In one embodiment, the circuit includes a plurality of logic elements that operate on relatively low voltage, and a master and slave latches each having storage elements that operate on a relatively high voltage.

  8. Low-Voltage Switched-Capacitor Circuits

    DEFF Research Database (Denmark)

    Bidari, E.; Keskin, M.; Maloberti, F.

    1999-01-01

    Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications.......Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

  9. Enhanced Model of Nonlinear Spiral High Voltage Divider

    Directory of Open Access Journals (Sweden)

    V. Panko

    2015-04-01

    Full Text Available This paper deals with the enhanced accurate DC and RF model of nonlinear spiral polysilicon voltage divider. The high resistance polysilicon divider is a sensing part of the high voltage start-up MOSFET transistor that can operate up to 700 V. This paper presents the structure of a proposed model, implemented voltage, frequency and temperature dependency, and scalability. A special attention is paid to the ability of the created model to cover the mismatch and influence of a variation of process parameters on the device characteristics. Finally, the comparison of measured data vs. simulation is presented in order to confirm the model validity and a typical application is demonstrated.

  10. A Novel Chopper Circuit Having Divided Multi-load

    Science.gov (United States)

    Yamamoto, Isamu; Matsui, Keiju; Mori, Hideki; Yao, Yugo

    A dc-dc converter is being widely used for various household appliances and for industry applications. The dc-dc converter is powered from single battery, and the voltage is varied according to the purpose. In the vehicle, various accessories whose electric power is different are being used. Thus, plural number of dc-dc converter should be provided, so these situations bring complicated circuits, and accordingly, higher cost. Moreover, this is not limited to the vehicle applications. For instance, for analog circuits and digital circuits, various power supplies with different voltages are used sometimes. Under such backgrounds, in this paper, we propose a novel dc-dc converter with simply circuit configuration which can supply to two or more different output loads. This converter can control output voltages by controlling duty ratio by using typically two switching devices, which is composed by single boost-switch and single buck-switch. The output voltage can be controlled widely. A few modified circuits developed from the fundamental circuit are represented including the general multi-load circuit. Theoretical equations are solved, where results are confirmed by simulations and experiments.

  11. Analysis of the match problem of a capacitive voltage divider with a long measurement cable

    Science.gov (United States)

    Yu, Bin-Xiong; Li, Rui; Su, Jian-Cang; Zhao, Liang; Zhang, Yu; Zheng, Lei; Zeng, Bo; Cheng, Jie; Gao, Peng-Cheng; Qiu, Xu-Dong; Xu, Xu-dong

    2017-09-01

    Research is carried out on the basis of the traditional two-end matched circuit of a capacitive voltage divider with a long measurement cable. Transmission progress in the circuit is analyzed theoretically. A match condition of the circuit is acquired, which requires that the circuit satisfies two conditions: (1) the measurement error should be small for a pulse with a duration of less than twice the delay time of the measurement cable; (2) the initial division ratio and the stable division ratio of the circuit are the same. Two matched methods of the circuit are acquired, including the first-order matched method and the second-order matched method. Numerical simulations are carried out. According to the simulation results, the relative errors of the circuits with a cable of 20 m are less than 1.5%, obtained by using both match methods for measurement of rectangular pulses with rise and fall times of 5 ns. An improved circuit is presented, which is suitable for any situation where the low-voltage capacitance of the capacitive divider is even smaller than the capaictance of the measurement cable. A verification experment is carried out, and the test result confirms the simulation result.

  12. Novel Low Loss Active Voltage Clamp Circuit for Series Connection of RCGCT thyristors

    Science.gov (United States)

    Ito, Hiroshi; Suzuki, Akihiro; Iwata, Akihiko

    This paper describes novel low loss active voltage clamp circuits for the series connection of RCGCT thyristors. For high voltage converters the series connection of power semiconductor devices is an essential technique for direct switching of high voltages. Several protection circuits have been applied to the series connection of RCGCT thyristors such as CRD snubber circuits which suppress over-voltages across RCGCT thyristors, and voltage balancing resistors to equalize voltage sharing in steady states. However, significant losses in these protection circuits lower the converter’s efficiency. We propose novel low-loss protection circuits, which have active voltage clamp snubber circuits and static voltage balancing circuits. The clamp capacitor voltage of the active voltage clamp snubber circuits are designed to be higher than the equally divided DC-Link voltage. This method can reduce the loss of the clamp circuit to no more than 1/10 of that of the conventional CRD snubber. Also the static voltage balancing circuits compensate for the voltage imbalance generated by the difference in the leakage current between the series connection RCGCT thyristors.

  13. 30 CFR 77.800 - High-voltage circuits; circuit breakers.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 77.800... COAL MINES Surface High-Voltage Distribution § 77.800 High-voltage circuits; circuit breakers. High-voltage circuits supplying power to portable or mobile equipment shall be protected by suitable...

  14. 30 CFR 75.800 - High-voltage circuits; circuit breakers.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage circuits; circuit breakers. 75.800... § 75.800 High-voltage circuits; circuit breakers. High-voltage circuits entering the underground area of any coal mine shall be protected by suitable circuit breakers of adequate interrupting...

  15. Investigation about decoupling capacitors of PMT voltage divider effects on neutron-gamma discrimination

    Energy Technology Data Exchange (ETDEWEB)

    Divani, Nazila, E-mail: n-divani@birjand.ac.ir; Firoozabadi, Mohammad M. [Dep. Of Physics, Faculty of Science, University of Birjand, Birjand (Iran, Islamic Republic of); Bayat, Esmail [Nuclear Science and Technology Research Institute, Atomic Energy Organization of Iran (Iran, Islamic Republic of)

    2014-11-24

    Scintillators are almost used in any nuclear laboratory. These detectors combine of scintillation materials, PMT and a voltage divider. Voltage dividers are different in resistive ladder design. But the effect of decoupling capacitors and damping resistors haven’t discussed yet. In this paper at first a good equilibrium circuit designed for PMT, and it was used for investigating about capacitors and resistors in much manner. Results show that decoupling capacitors have great effect on PMT output pulses. In this research, it was tried to investigate the effect of Capacitor’s value and places on PMT voltage divider in Neutron-Gamma discrimination capability. Therefore, the voltage divider circuit for R329-02 Hamamatsu PMT was made and Zero Cross method used for neutron-gamma discrimination. The neutron source was a 20Ci Am-Be. Anode and Dynode pulses and discrimination spectrum were saved. The results showed that the pulse height and discrimination quality change with the value and setting of capacitors.

  16. High voltage generator circuit with low power and high efficiency applied in EEPROM

    Institute of Scientific and Technical Information of China (English)

    Liu Yan; Zhang Shilin; Zhao Yiqiang

    2012-01-01

    This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory (EEPROM).The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique.The high efficiency is dependent on the zero threshold voltage (Vth) MOSFET and the charge transfer switch (CTS) charge pump.The proposed high voltage generator circuit has been implemented in a 0.35μm EEPROM CMOS process.Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48 μW and a higher pumping efficiency (83.3%) than previously reported circuits.This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation.

  17. Binary Versus Decade Inductive Voltage Divider Comparison and Error Decomposition

    Science.gov (United States)

    1995-08-01

    1995 IEEE Authorized licensed use limited to: US Naval Academy. Downloaded on January 30, 2009 at 11:28 from IEEE Xplore . Restrictions apply...Downloaded on January 30, 2009 at 11:28 from IEEE Xplore . Restrictions apply. 906 s, A U U U U U l f U U J s, sa I IEEE TRANSACTIONS ON...30, 2009 at 11:28 from IEEE Xplore . Restrictions apply. AVRAMOV-ZAMUROVIC et al.: BINARY VERSUS DECADE INDUCTIVE VOLTAGE DIVIDER COMPARISON AND ERROR

  18. Kirchhoff voltage law corrected for radiating circuits

    CERN Document Server

    Lara, Vitor

    2014-01-01

    When a circular loop composed by a RLC is put to oscillate, the oscillation will eventually vanish in an exponentially decaying current, even considering superconducting wires, due to the emission of electric and magnetic dipole radiation. In this work we propose a modification on the Kirchhoff voltage law by adding the radiative contributions to the energy loss as an effective resistance, whose value is relatively small when compared to typical resistance value, but fundamental to describe correctly real circuits. We have also analysed the change in the pattern of the radiation spectra emitted by the circuit as we vary both the effective and electrical resistance.

  19. Isolated Fast High-Voltage Switching Circuit

    Science.gov (United States)

    Rizzi, Anthony

    1992-01-01

    Electrically isolated switching circuit supplies pulses at potentials up to 6.5 kV and currents up to 6.5 A, lasting as long as few microseconds. Turn-on time about 40 ns; turn-off time about 3 microseconds. Electrically isolated from control circuitry by means of fiber-optic signal coupling and isolated power supply. Electrical isolation protects both technician and equipment. This and similar circuits useful in such industrial and scientific applications as high-voltage, high-frequency test equipment; electrostatic-discharge test equipment; plasma-laboratory instrumentation; spark chambers; and electromagnetic-interference test equipment.

  20. Program-Controlled High Voltage Module in Active Voltage Dividers(AVD) for MPGD

    CERN Document Server

    Ginting, Muhammad Fadhil

    2016-01-01

    Micro Pattern Gas Detectors (MPGD) applications are rapidly developing and became an important part of upgrades for the LHC detectors. RD51/CERN have worked on Active Voltage Divider (AVD) technology for multistage MPGDs, One of the next developments for the AVD is to design and integrate high voltage module in a single box. The Program-Controlled High Voltage Module, part of one AIDA2020 project, has been successfully designed and developed, and can be integrated in AVD design.

  1. Next generation KATRIN high precision voltage divider for voltages up to 65kV

    CERN Document Server

    Bauer, S; Hochschulz, F; Ortjohann, H -W; Rosendahl, S; Thümmler, T; Schmidt, M; Weinheimer, C

    2013-01-01

    The KATRIN (KArlsruhe TRItium Neutrino) experiment aims to determine the mass of the electron antineutrino with a sensitivity of 200meV by precisely measuring the electron spectrum of the tritium beta decay. This will be done by the use of a retarding spectrometer of the MAC-E-Filter type. To achieve the desired sensitivity the stability of the retarding potential of -18.6kV has to be monitored with a precision of 3ppm over at least two months. Since this is not feasible with commercial devices, two ppm-class high voltage dividers were developed, following the concept of the standard divider for DC voltages of up to 100kV of the Physikalisch-Technische Bundesanstalt (PTB). In order to reach such high accuracies different effects have to be considered. The two most important ones are the temperature dependence of resistance and leakage currents, caused by insulators or corona discharges. For the second divider improvements were made concerning the high-precision resistors and the thermal design of the divider....

  2. Integrated differential high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Farch, Kjartan

    2015-01-01

    In this paper an integrated differential high-voltage transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is designed and implemented in a 0.35 μm high-voltage process. Measurements are performed on the integrated circuit in order...... to assess its performance. The circuit generates pulses at differential voltage levels of 60V, 80V and 100 V, a frequency up to 5MHz and a measured driving strength of 1.75 V/ns with the CMUT connected. The total on-chip area occupied by the transmitting circuit is 0.18 mm2 and the power consumption...

  3. Integrated Reconfigurable High-Voltage Transmitting Circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2014-01-01

    -out and measurements are performed on the integrated circuit. The transmitting circuit is reconfigurable externally making it able to drive a wide variety of CMUTs. The transmitting circuit can generate several pulse shapes, pulse voltages up to 100 V, maximum pulse range of 50 V and frequencies up to 5 MHz. The area...

  4. A High-Voltage Level Tolerant Transistor Circuit

    NARCIS (Netherlands)

    Annema, Anne Johan; Geelen, Godefridus Johannes Gertrudis Maria

    2001-01-01

    A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1) con

  5. The voltage-current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

    Institute of Scientific and Technical Information of China (English)

    Bao Bo-Cheng; Feng Fei; Dong Wei; Pan Sai-Hu

    2013-01-01

    A flux-controlled memristor characterized by smooth cubic nonlinearity is taken as an example,upon which the voltage-current relationships (VCRs) between two parallel memristive circuits-a parallel memristor and capacitor circuit (the parallel MC circuit),and a parallel memristor and inductor circuit (the parallel ML circuit)-are investigated.The results indicate that the VCR between these two parallel memristive circuits is closely related to the circuit parameters,and the frequency and amplitude of the sinusoidal voltage stimulus.An equivalent circuit model of the memristor is built,upon which the circuit simulations and experimental measurements of both the parallel MC circuit and the parallel ML circuit are performed,and the results verify the theoretical analysis results.

  6. Inverter-based circuit design techniques for low supply voltages

    CERN Document Server

    Palani, Rakesh Kumar

    2017-01-01

    This book describes intuitive analog design approaches using digital inverters, providing filter architectures and circuit techniques enabling high performance analog circuit design. The authors provide process, supply voltage and temperature (PVT) variation-tolerant design techniques for inverter based circuits. They also discuss various analog design techniques for lower technology nodes and lower power supply, which can be used for designing high performance systems-on-chip.    .

  7. Integrated reconfigurable high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2015-01-01

    In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

  8. Integrated reconfigurable high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger;

    2015-01-01

    In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

  9. 30 CFR 75.900 - Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit...

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage circuits serving three... STANDARDS-UNDERGROUND COAL MINES Underground Low- and Medium-Voltage Alternating Current Circuits § 75.900 Low- and medium-voltage circuits serving three-phase alternating current equipment; circuit breakers...

  10. Noise tolerant voltage-controlled LC oscillator circuits for deep submicron VLSI system-on-a-chip radio circuits

    OpenAIRE

    Typpö, Jukka

    2003-01-01

    This thesis studies the problems with maintaining the spectral purity of fully integrated VCO circuits for radio frequency synthesizers in single-chip system designs. LC tank circuit oscillator circuits are shown to convert amplitude variation in the tank circuit voltage into frequency modulation, if voltage dependent capacitances are present in the tank circuit. Since the parasitic capacitances of the gain transistors and the capacitance of the varactor device in a VCO circuit are voltage de...

  11. A novel water resistor divider with a coaxial low-voltage arm.

    Science.gov (United States)

    Jia, Wei; Chen, Weiqing; Mao, Congguang; Zeng, Jiangtao

    2010-03-01

    A new style high voltage resistor divider made of saline solution has been constructed and tested. A coaxial construction is used on the low-voltage arm, as the signal extraction electrode, which can increase the attenuation ratio of the divider. The time response of divider limited by the stray parameter also can be improved. Comparing the results of calibrated experiment with the commonly used equal size copper sulfate dividers, the new probe has nearly five times increase in the attenuation ratio. The time response of the new style divider in the dimension of 30 mm in diameter and 400 mm in length can reach to 1 ns.

  12. Low Voltage Analog Circuit Design Based on the Flipped Voltage Follower

    Directory of Open Access Journals (Sweden)

    Neeraj Yadav

    2012-03-01

    Full Text Available The desire for portability of electronics equipment generated a need for low power system in battery products like hearing aids, implantable cardiac pacemakers, cell phones and hand held multimedia terminals. Low voltage analog circuit design differs considerably from those of high voltage analog circuit design. This paper present the basic cell knows as “flipped voltage follower” for low voltage/ low power operation. The detailed classification of basic topologies derived from the FVF cell is presented and there is a low voltage current mirror based on FVF cell has been presented. All the Circuit has been simulated using Hspice tool 0.18µm CMOS Technology. Different quality factors such as frequency response, power consumption are considered. A compression also made between previous current mirror and new designed current mirror. The layout of the current mirror has been also designed using Cadence tool.

  13. Thermally-induced voltage alteration for integrated circuit analysis

    Energy Technology Data Exchange (ETDEWEB)

    Cole, Jr., Edward I. (Albuquerque, NM)

    2000-01-01

    A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

  14. Thermally-induced voltage alteration for integrated circuit analysis

    Energy Technology Data Exchange (ETDEWEB)

    Cole, E.I. Jr.

    2000-06-20

    A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

  15. Variation-aware adaptive voltage scaling for digital CMOS circuits

    CERN Document Server

    Wirnshofer, Martin

    2013-01-01

    Increasing performance demands in integrated circuits, together with limited energy budgets, force IC designers to find new ways of saving power. One innovative way is the presented adaptive voltage scaling scheme, which tunes the supply voltage according to the present process, voltage and temperature variations as well as aging. The voltage is adapted “on the fly” by means of in-situ delay monitors to exploit unused timing margin, produced by state-of-the-art worst-case designs. This book discusses the design of the enhanced in-situ delay monitors and the implementation of the complete control-loop comprising the monitors, a control-logic and an on-chip voltage regulator. An analytical Markov-based model of the control-loop is derived to analyze its robustness and stability. Variation-Aware Adaptive Voltage Scaling for Digital CMOS Circuits provides an in-depth assessment of the proposed voltage scaling scheme when applied to an arithmetic and an image processing circuit. This book is written for engine...

  16. Adaptive Voltage Management Enabling Energy Efficiency in Nanoscale Integrated Circuits

    Science.gov (United States)

    Shapiro, Alexander E.

    Battery powered devices emphasize energy efficiency in modern sub-22 nm CMOS microprocessors rendering classic power reduction solutions not sufficient. Classical solutions that reduce power consumption in high performance integrated circuits are superseded with novel and enhanced power reduction techniques to enable the greater energy efficiency desired in modern microprocessors and emerging mobile platforms. Dynamic power consumption is reduced by operating over a wide range of supply voltages. This region of operation is enabled by a high speed and power efficient level shifter which translates low voltage digital signals to higher voltages (and vice versa), a key component that enables communication among circuits operating at different voltage levels. Additionally, optimizing the wide supply voltage range of signals propagating across long interconnect enables greater energy savings. A closed-form delay model supporting wide voltage range is developed to enable this capability. The model supports an ultra-wide voltage range from nominal voltages to subthreshold voltages, and a wide range of repeater sizes. To mitigate the drawback of lower operating speed at reduced supply voltages, the high performance exhibited by MOS current mode logic technology is exploited. High performance and energy efficient circuits are enabled by combining this logic style with power efficient near threshold circuits. Many-core systems that operate at high frequencies and process highly parallel workloads benefit from this combination of MCML with NTC. Due to aggressive scaling, static power consumption can in some cases overshadow dynamic power. Techniques to lower leakage power have therefore become an important objective in modern microprocessors. To address this issue, an adaptive power gating technique is proposed. This technique utilizes high levels of granularity to save additional leakage power when a circuit is active as opposed to standard power gating that saves static

  17. Programmable Low-Voltage Circuit Breaker and Tester

    Science.gov (United States)

    Greenfield, Terry

    2008-01-01

    An instrumentation system that would comprise a remotely controllable and programmable low-voltage circuit breaker plus several electric-circuit-testing subsystems has been conceived, originally for use aboard a spacecraft during all phases of operation from pre-launch testing through launch, ascent, orbit, descent, and landing. The system could also be adapted to similar use aboard aircraft. In comparison with remotely controllable circuit breakers heretofore commercially available, this system would be smaller, less massive, and capable of performing more functions, as needed for aerospace applications.

  18. 30 CFR 75.902-1 - Maximum voltage ground check circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Maximum voltage ground check circuits. 75.902-1... Alternating Current Circuits § 75.902-1 Maximum voltage ground check circuits. The maximum voltage used for such ground check circuits shall not exceed 40 volts....

  19. USING PHOTO-INDUCED OPEN-CIRCUIT VOLTAGE

    African Journals Online (AJOL)

    open-circuit voltage decay, silicon photovoltaic solar cells. ..... cells in series configuration encapsulated on a ceramic base with glass cover and has an effective .... silicon solar cells and should be used parallel to the common performance test ...

  20. 30 CFR 77.901 - Protection of low- and medium-voltage three-phase circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of low- and medium-voltage three... WORK AREAS OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.901 Protection of low- and medium-voltage three-phase circuits. (a) Low- and medium-voltage circuits supplying...

  1. 30 CFR 75.907 - Design of trailing cables for medium-voltage circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Design of trailing cables for medium-voltage... Medium-Voltage Alternating Current Circuits § 75.907 Design of trailing cables for medium-voltage circuits. Trailing cables for medium-voltage circuits shall include grounding conductors, a ground check...

  2. 30 CFR 77.902-1 - Fail safe ground check circuits; maximum voltage.

    Science.gov (United States)

    2010-07-01

    ... voltage. 77.902-1 Section 77.902-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902-1 Fail safe ground check circuits; maximum voltage. The maximum voltage used for ground check circuits under §...

  3. Design techniques for low-voltage analog integrated circuits

    Science.gov (United States)

    Rakús, Matej; Stopjaková, Viera; Arbet, Daniel

    2017-08-01

    In this paper, a review and analysis of different design techniques for (ultra) low-voltage integrated circuits (IC) are performed. This analysis shows that the most suitable design methods for low-voltage analog IC design in a standard CMOS process include techniques using bulk-driven MOS transistors, dynamic threshold MOS transistors and MOS transistors operating in weak or moderate inversion regions. The main advantage of such techniques is that there is no need for any modification of standard CMOS structure or process. Basic circuit building blocks like differential amplifiers or current mirrors designed using these approaches are able to operate with the power supply voltage of 600 mV (or even lower), which is the key feature towards integrated systems for modern portable applications.

  4. A Study on the step response characteristics in shielded resistor divider for full lightning impulse voltage

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Ik Soo; Lee, Hyeong Ho [Korea Electrotehnology Research Institute, Changwon (Korea, Republic of); Cho, Jung Soo; Park, Jung Hoo [Pusan National University, Pusan (Korea, Republic of)

    1996-02-01

    This paper presents the development technology of standard shielded resistor divider for full lightning impulse voltage. The ability of large-capacity power apparatus to withstand lighting stroke is usually evaluated by means of full lightning impulse voltage. Lightning impulse voltage test has been essential to evaluate the insulation performance of electrical power apparatus. Recently international standard (IEC 60) on high voltage measurement techniques is being revised and requests a formal traceability of high voltage measurements. Therefore, general interest for this area has grown considerably during last years, and several international intercomparisons have already completed worldwide, i.e. Europe, Japan, America etc., In this viewpoint, we have also investigated the step response of the standard shielded resistor divider, which satisfies the IEC recommendation. (author). 7 refs., 14 figs., 2 tabs.

  5. A New Low Voltage P-MOS Bulk Driven Current Mirror Circuit

    Directory of Open Access Journals (Sweden)

    Anuj Dugaya

    2013-08-01

    Full Text Available This work proposes a new low voltage current mirror circuit using bulk driven technique. Bulk driventechnique is used to reduce the threshold of PMOS used in low voltage current mirror circuits (LVCM.TheProposed circuit consist of 4 PMOS and 5 NMOS. The proposed circuit operated at +0.85 V supplyvoltage.The bandwidth of this circuit has also been enhanced using resistive compensation technique. Theproposed circuit has been simulated in Cadence Design Environment in UMC 180nm CMOS technology. Atransfer characteristic of the proposed circuit has been discussed. The proposed circuit find application inlow voltage and low power analog integrated circuits.

  6. Silicon solar cells with high open-circuit voltage

    Science.gov (United States)

    Minnucci, J. A.; Matthei, K. W.; Kirkpatrick, A. R.; Mccrosky, A.

    1980-01-01

    Open-circuit voltages as high as 0.645 V (AM0-25 C) have been obtained by a new process developed for low-resistivity silicon. The method utilizes high-dose phosphorus implantation, followed by furnace annealing and simultaneous oxide growth to form high-efficiency, shallow junctions. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient AR coating. Boron doped silicon with resistivities from 0.1 to 0.3 ohm-cm has been processed according to this sequence; results show highest open-circuit voltage is attained with 0.1-ohm-cm starting material. The effects of bandgap narrowing, caused by high doping concentrations in the junction, were also investigated by implanting phosphorus over a wide range of dose levels.

  7. 30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage ground check monitor... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. On or before September 30, 1970, low- and medium-voltage resistance grounded systems shall...

  8. 30 CFR 77.802 - Protection of high-voltage circuits; neutral grounding resistors; disconnecting devices.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of high-voltage circuits; neutral... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.802 Protection of high-voltage circuits; neutral grounding resistors; disconnecting devices. High-voltage...

  9. 30 CFR 77.803-1 - Fail safe ground check circuits; maximum voltage.

    Science.gov (United States)

    2010-07-01

    ... voltage. 77.803-1 Section 77.803-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.803-1 Fail safe ground check circuits; maximum voltage. The maximum voltage used for ground check circuits under § 77.803 shall...

  10. ELABORATION AND TESTING OF SOFTWARE FOR SIGNAL PROCESSING OF RESISTIVE HIGH VOLTAGE DIVIDER

    Directory of Open Access Journals (Sweden)

    Sit М.

    2009-12-01

    Full Text Available Mathematical tools and the software for input in the computer of signals of a resistive divider of a high voltage of the industrial frequency, providing a split-hair accuracy of measurement of parameters of the basic and harmonics which are divisible to the basic is developed.

  11. 30 CFR 77.900 - Low- and medium-voltage circuits serving portable or mobile three-phase alternating current...

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage circuits serving... Medium-Voltage Alternating Current Circuits § 77.900 Low- and medium-voltage circuits serving portable or mobile three-phase alternating current equipment; circuit breakers. Low- and medium-voltage circuits...

  12. CMOS DESIGN OF A MULTI_INPUT ANALOG MULTIPLIER AND DIVIDER CIRCUIT

    OpenAIRE

    2014-01-01

    This paper proposes a CMOS current-mode multi_input analog multiplier and divider circuit based on a new method. Exponential and logarithmic functions are employed to realize the circuit which is used in neural network and fuzzy integrated systems. The major advantages of this multiplier are ability of having multi_input signals, and low Total Harmonic Distortion (THD). The circuit is designed and simulated using MATLAB software and HSPICE simulator by level 49 parameters (BSIM3v3) in 0.35μm ...

  13. Stabilizing Ferroresonance Oscillations in Voltage Transformers Using Limiter Circuit

    Directory of Open Access Journals (Sweden)

    Hamid Radmanesh

    2012-12-01

    Full Text Available This paper employs the multiple scales method and chaos theory for analyzing chaotic behavior of the voltage transformer (VT with linear core loss model. It is shown that ferroresonance phenomenon in VTs can be classified as chaotic dynamics, including a sequence of bifurcations such as period doubling bifurcation (PDB, saddle node bifurcation (SNB, Hopf Bifurcation (HB and chaos. Bifurcation diagrams and phase plane diagrams are drawn using a continuation method for linear core loss model and lyapunov exponents are obtained using the multiple scales method. At first an overview of the subject in the literature is provided. Then, ferroresonance phenomenon is introduced and its various types in a VT are simulated. Finally the effects of ferroresonance suppression circuit on stabilizing these oscillations are studied. The proposed approach is implemented using MATLAB, and simulation results are presented. The results show connecting the ferroresonance suppression circuit to the system configuration, causes great controlling effect on ferroresonance overvoltage.

  14. 30 CFR 77.902 - Low- and medium-voltage ground check monitor circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage ground check monitor... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902 Low- and medium-voltage ground check monitor circuits. On and after September 30, 1971, three-phase low- and...

  15. 30 CFR 75.511 - Low-, medium-, or high-voltage distribution circuits and equipment; repair.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low-, medium-, or high-voltage distribution... Electrical Equipment-General § 75.511 Low-, medium-, or high-voltage distribution circuits and equipment; repair. No electrical work shall be performed on low-, medium-, or high-voltage distribution circuits or...

  16. 30 CFR 75.705-10 - Tying into energized high-voltage surface circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Tying into energized high-voltage surface....705-10 Tying into energized high-voltage surface circuits. If the work of forming an additional circuit by tying into an energized high-voltage surface line is performed from the ground, any...

  17. 30 CFR 77.704-10 - Tying into energized high-voltage surface circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Tying into energized high-voltage surface... AREAS OF UNDERGROUND COAL MINES Grounding § 77.704-10 Tying into energized high-voltage surface circuits. If the work of forming an additional circuit by tying into an energized high-voltage surface line...

  18. 30 CFR 75.803-1 - Maximum voltage ground check circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Maximum voltage ground check circuits. 75.803-1 Section 75.803-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE... § 75.803-1 Maximum voltage ground check circuits. The maximum voltage used for ground check...

  19. A New Low Voltage P-MOS Bulk Driven Current Mirror Circuit

    Directory of Open Access Journals (Sweden)

    Anuj Dugaya

    2013-08-01

    Full Text Available This work proposes a new low voltage current mirror circuit using bulk driven technique. Bulk driven technique is used to reduce the threshold of PMOS u sed in low voltage current mirror circuits (LVCM.T he Proposed circuit consist of 4 PMOS and 5 NMOS. The proposed circuit operated at +0.85 V supply voltage.The bandwidth of this circuit has also been enhanced using resistive compensation technique. T he proposed circuit has been simulated in Cadence Desi gn Environment in UMC 180nm CMOS technology. A transfer characteristic of the proposed circuit has been discussed. The proposed circuit find applicat ion in low voltage and low power analog integrated circuit s.

  20. A novel voltage output integrated circuit temperature sensor

    Institute of Scientific and Technical Information of China (English)

    吴晓波; 方志刚; 等

    2002-01-01

    The novel integrated circuit(IC) temperature sensor presented in this paper works similarly as a two-terminal Zener,has breakdown voltage directly proportional to Kelvin temperature at 10mV/℃,with typical error of less tha ±1.0℃ over a temperature range from-50℃to +120℃ .In addition to all the features that conventional IC temperature sensors have,the new device also has very low static power dissipation(0.5mW),low output impedance(less than 1Ω),execllent stability,high reproducibility,and high precision.The sensor's circuit design and layout are discussed in detail.Applications of the sensor include almost and type of temperature sensing over the range of -50℃-+125℃。The low impedance and linear output of the device make interfacing the readout or control circuitry especially easy.Due to the excellent performance and low cost of this sensor.more application of the sensor over wide temperature range are expected.

  1. KCNE1 divides the voltage sensor movement in KCNQ1/KCNE1 channels into two steps

    Science.gov (United States)

    Barro-Soria, Rene; Rebolledo, Santiago; Liin, Sara I.; Perez, Marta E.; Sampson, Kevin J.; Kass, Robert S.; Larsson, H. Peter

    2014-04-01

    The functional properties of KCNQ1 channels are highly dependent on associated KCNE-β subunits. Mutations in KCNQ1 or KCNE subunits can cause congenital channelopathies, such as deafness, cardiac arrhythmias and epilepsy. The mechanism by which KCNE1-β subunits slow the kinetics of KCNQ1 channels is a matter of current controversy. Here we show that KCNQ1/KCNE1 channel activation occurs in two steps: first, mutually independent voltage sensor movements in the four KCNQ1 subunits generate the main gating charge movement and underlie the initial delay in the activation time course of KCNQ1/KCNE1 currents. Second, a slower and concerted conformational change of all four voltage sensors and the gate, which opens the KCNQ1/KCNE1 channel. Our data show that KCNE1 divides the voltage sensor movement into two steps with widely different voltage dependences and kinetics. The two voltage sensor steps in KCNQ1/KCNE1 channels can be pharmacologically isolated and further separated by a disease-causing mutation.

  2. Optimization of Temperature Coefficient and Noise Analysis of MOSFET- Only Voltage Reference Circuit

    Directory of Open Access Journals (Sweden)

    Arathi.p

    2016-09-01

    Full Text Available The optimization of temperature coefficient and comparison of output noise of two MOSFET only voltage references are introduced. The circuit behavior is analytically described and the performance of the proposed circuits are confirmed through 180nm CMOS technology in virtuoso and the simulation results are presented. Both the circuits can be operated with supply voltage varies from 0.5-1.2V.The output voltage references varied over a temperature range of -25℃ to 50℃.

  3. Study on the instantaneous protection reliability of low voltage circuit breakers

    Institute of Scientific and Technical Information of China (English)

    LU Jian-guo; DU Tai-hang; LUO Yan-yan

    2007-01-01

    This paper outlines the significance of enhancing the instantaneous protection reliability of low voltage circuit breakers and describes their main failure modes. The instantaneous failure mechanism of low voltage circuit breakers was analyzed so that measures to improve instantaneous protection reliability can be determined. Furthermore, the theory of the instantaneous characteristics Calibration device for low voltage circuit breakers and the method of eliminating the non-periodic component of test current are given in detail. Finally, the test results are presented.

  4. Equivalent realisation circuit for a class of non-ideal voltage-controlled memristors

    Directory of Open Access Journals (Sweden)

    Saihu Pan

    2015-12-01

    Full Text Available In this study, an equivalent realisation circuit with off-the-shelf components and devices is proposed, which can be used to equivalently implement a class of non-ideal voltage-controlled memristors. The mathematical models of the equivalent realisation circuit with three function arithmetic circuits are built and their fingerprints are analysed by the pinched hysteresis loops with bipolar periodic voltage stimuli. The numerical simulations are easily verified by experimental measurements, which indicate that when three function arithmetic circuits are linked, the equivalent realisation circuit can realise three non-ideal voltage-controlled memristors with different non-linearities.

  5. Optimal planning of series resistor to control time constant of test circuit for high-voltage AC circuit-breakers

    Directory of Open Access Journals (Sweden)

    Yoon-Ho Kim

    2016-01-01

    Full Text Available The equivalent test circuit that can deliver both short-circuit current and recovery voltage is used to verify the performance of high-voltage circuit breakers. Most of the parameters in this circuit can be obtained by using a simple calculation or a simulation program. The ratings of the circuit breaker include rated short-circuit breaking current, rated short-circuit making current, rated operating sequence of the circuit breaker and rated short-time current. Among these ratings, the short-circuit making capacity of the circuit breaker is expressed in peak value and not in RMS value similar to breaking capacity. A series resistor or super-excitation is used to control the peak value of the short-circuit current in the equivalent test circuit. When using a series resistor, a higher rating of circuit breakers leads to a higher thermal capacity, thereby requiring additional space. Therefore, an effective, optimal design of the series resistor is essential. This paper proposes a method for reducing thermal capacity and selecting the optimal resistance to limit the making current by controlling the DC time constant of the test circuit.

  6. A novel voltage output integrated circuit temperature sensor

    Institute of Scientific and Technical Information of China (English)

    吴晓波; 赵梦恋; 严晓浪; 方志刚

    2002-01-01

    The novel integrated circuit (IC) temperature sensor presented in this paper works similarly as a two-terminal Zener, has breakdown voltage directly proportional to Kelvin temperature at 10 mV/℃, with typical error of less than ±1.0℃ over a temperature range from -50℃ to +125℃. In addition to all the features that conventional IC temperature sensors have, the new device also has very low static power dissipation ( 0.5 mW ) , low output impedance ( less than 1Ω), excellent stability, high reproducibility, and high precision. The sensor's circuit design and layout are discussed in detail. Applications of the sensor include almost any type of temperature sensing over the range of -50℃-+125℃. The low impedance and linear output of the device make interfacing the readout or control circuitry especially easy. Due to the excellent performance and low cost of this sensor, more applications of the sensor over wide temperature range are expected.

  7. High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip

    Science.gov (United States)

    Issadore, David; Franke, Thomas; Brown, Keith A.; Hunt, Thomas P.; Westervelt, Robert M.

    2010-01-01

    A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm2 in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip’s surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. PMID:20625468

  8. Fault Analysis of DC Voltage Dividers in Xiangjiaba--Shanghai ±800 kV UHVDC Project

    Institute of Scientific and Technical Information of China (English)

    LI Fengqi; SHE Zhengqiu; LOU Dianqiang; Rajendra Iyer; Urban Astrom

    2012-01-01

    Transient DC voltage measurement error has been observed several times ever since Xiangjiaba--Shanghai ±800 kV UHVDC project started its commercial operation. The measurement error causes considerable disturbances to the AC networks. By analyzing the time frequency record, simulating faults at different positions of the divider, and testing the gas in voltage dividers, the fault is located and then is proved to be some partial discharges inside DC voltage dividers. The reason of the internal flashes and the solution to the problem is also discussed in this paper. The conclusion is that instead of N2 , SF6 should be used for the internal insulation of high voltage DC voltage dividers.

  9. A novel high voltage start up circuit for an integrated switched mode power supply

    Energy Technology Data Exchange (ETDEWEB)

    Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

  10. SEMICONDUCTOR DEVICES: A novel high voltage start up circuit for an integrated switched mode power supply

    Science.gov (United States)

    Hao, Hu; Xingbi, Chen

    2010-09-01

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.

  11. Modeling self-priming circuits for dielectric elastomer generators towards optimum voltage boost

    Science.gov (United States)

    Zanini, Plinio; Rossiter, Jonathan; Homer, Martin

    2016-04-01

    One of the main challenges for the practical implementation of dielectric elastomer generators (DEGs) is supplying high voltages. To address this issue, systems using self-priming circuits (SPCs) — which exploit the DEG voltage swing to increase its supplied voltage — have been used with success. A self-priming circuit consists of a charge pump implemented in parallel with the DEG circuit. At each energy harvesting cycle, the DEG receives a low voltage input and, through an almost constant charge cycle, generates a high voltage output. SPCs receive the high voltage output at the end of the energy harvesting cycle and supply it back as input for the following cycle, using the DEG as a voltage multiplier element. Although rules for designing self-priming circuits for dielectric elastomer generators exist, they have been obtained from intuitive observation of simulation results and lack a solid theoretical foundation. Here we report the development of a mathematical model to predict voltage boost using self-priming circuits. The voltage on the DEG attached to the SPC is described as a function of its initial conditions, circuit parameters/layout, and the DEG capacitance. Our mathematical model has been validated on an existing DEG implementation from the literature, and successfully predicts the voltage boost for each cycle. Furthermore, it allows us to understand the conditions for the boost to exist, and obtain the design rules that maximize the voltage boost.

  12. High-Mixed-Voltage Analog and RF Circuit Techniques for Nanoscale CMOS

    CERN Document Server

    Mak, Pui-In

    2012-01-01

    This book presents high-/mixed-voltage analog and radio frequency (RF) circuit techniques for developing low-cost multistandard wireless receivers in nm-length CMOS processes.  Key benefits of high-/mixed-voltage RF and analog CMOS circuits are explained, state-of-the-art examples are studied, and circuit solutions before and after voltage-conscious design are compared. Three real design examples are included, which demonstrate the feasibility of high-/mixed-voltage circuit techniques.    Provides a valuable summary and real case studies of the state-of-the-art in high-/mixed-voltage circuits and systems; Includes novel high-/mixed-voltage analog and RF circuit techniques – from concept to practice; Describes the first high-voltage-enabled mobile-TVRF front-end in 90nm CMOS and the first mixed-voltage full-band mobile-TV Receiver in 65nm CMOS; Demonstrates the feasibility of high-/mixed-voltage circuit techniques with real design examples.  

  13. Analysis of Possibilities to Reduce the Voltages Induced in Multi-circuit and Multi-voltage Overhead Lines

    Directory of Open Access Journals (Sweden)

    Rafał Tarko

    2015-09-01

    Full Text Available This paper presents the issues of electromagnetic interactions in a four-circuit and dual-voltage power line. Such solutions are increasingly used in practice due to difficulties in land acquisition for the construction of new power lines. Lines of this type, however, have some disadvantages, incl. the electromagnetic interactions between the circuits and voltages induced as their consequence. These issues are considered in relation to an existing four-circuit, 110 kV and 15 kV line. Results of the studies of the interaction effects in a real system, and an analysis of selected ways to reduce the voltage induced in 15 kV line circuits are presented.

  14. A Simple Voltage Controlled Oscillator Using Bootstrap Circuits and NOR-RS Flip Flop

    Science.gov (United States)

    Chaikla, Amphawan; Pongswatd, Sawai; Sasaki, Hirofumi; Fujimoto, Kuniaki; Yahara, Mitsutoshi

    This paper presents a simple and successful design for a voltage controlled oscillator. The proposed circuit is based on the use of two identical bootstrap circuits and a NOR-RS Flip Flop to generate wide-tunable sawtooth and square waves. Increasing control voltage linearly increases the output oscillation frequency. Experimental results verifying the performances of the proposed circuit are in agreement with the calculated values.

  15. Open circuit voltage characterization of lithium-ion batteries

    Science.gov (United States)

    Pattipati, B.; Balasingam, B.; Avvari, G. V.; Pattipati, K. R.; Bar-Shalom, Y.

    2014-12-01

    Several aspects of the open circuit voltage (OCV) characterization of Li-ion batteries as it applies to battery fuel gauging (BFG) in portable applications are considered in this paper. Accurate knowledge of the nonlinear relationship between the OCV and the state of charge (SOC) is required for adaptive SOC tracking during battery usage. BFG in portable applications requires this OCV-SOC characterization to meet additional constraints: (i) The OCV-SOC characterization has to be defined with a minimum number of parameters; (ii) It should be easily computable and invertible with few operations; and (iii) Computation of the model, its derivative and its inverse should be possible in a numerically stable way. With the help of OCV-SOC characterization data collected from 34 battery cells each at 16 different temperatures ranging from -25 °C to 50 °C, we present the following results in this paper: (a) A robust normalized OCV modeling approach that dramatically reduces the number of OCV-SOC parameters and as a result simplifies and generalizes the BFG across temperatures and aging, (b) Several novel functions for OCV modeling, (c) Efficient methods to simplify the computations of OCV functions, (d) Novel methods for OCV parameter estimation, and (e) A detailed performance analysis.

  16. Spectroscopic measurements with a silicon drift detector having a continuous implanted drift cathode-voltage divider

    CERN Document Server

    Bonvicini, V; D'Acunto, L; Franck, D; Gregorio, A; Pihet, P; Rashevsky, A; Vacchi, A; Vinogradov, L I; Zampa, N

    2000-01-01

    A silicon drift detector (SDD) prototype where the drift electrode also plays the role of a high-voltage divider has been realised and characterised for spectroscopic applications at near-room temperatures. Among the advantages of this design, is the absence of metal on the sensitive surface which makes this detector interesting for soft X-rays. The detector prototype has a large sensitive area (2x130 mm sup 2) and the charge is collected by two anodes (butterfly-like detector). The energy resolution of a such a detector has been investigated at near-room temperatures using a commercial, hybrid, low-noise charge-sensitive preamplifier. The results obtained for the X-ray lines from sup 5 sup 5 Fe and sup 2 sup 4 sup 1 Am are presented.

  17. Low Power, Reduced Dynamic Voltage Swing Domino Logic Circuits

    OpenAIRE

    Salendra.Govindarajulu; Dr.T.Jayachandra Prasad; Rangappa, P

    2010-01-01

    Dynamic domino logic circuits are widely used in modern digital VLSI circuits. These dynamic circuits are often favoured in high performance designs because of the speed advantage offered over static CMOS logic circuits. The main drawbacks of dynamic logic are a lack of design automation, a decreased tolerance to noise and increased power dissipation. In this work, new reduced – swing domino logic techniques which provide significant low power dissipation as compared to traditional domino cir...

  18. Near-Threshold Computing and Minimum Supply Voltage of Single-Rail MCML Circuits

    Directory of Open Access Journals (Sweden)

    Ruiping Cao

    2014-01-01

    Full Text Available In high-speed applications, MOS current mode logic (MCML is a good alternative. Scaling down supply voltage of the MCML circuits can achieve low power-delay product (PDP. However, the current almost all MCML circuits are realized with dual-rail scheme, where the NMOS configuration in series limits the minimum supply voltage. In this paper, single-rail MCML (SRMCML circuits are described, which can avoid the devices configuration in series, since their logic evaluation block can be realized by only using MOS devices in parallel. The relationship between the minimum supply voltage of the SRMCML circuits and the model parameters of MOS transistors is derived, so that the minimum supply voltage can be estimated before circuit designs. An MCML dynamic flop-flop based on SRMCML is also proposed. The optimization algorithm for near-threshold sequential circuits is presented. A near-threshold SRMCML mode-10 counter based on the optimization algorithm is verified. Scaling down the supply voltage of the SRMCML circuits is also investigated. The power dissipation, delay, and power-delay products of these circuits are carried out. The results show that the near-threshold SRMCML circuits can obtain low delay and small power-delay product.

  19. A Comparative Study of Ultra-Low Voltage Digital Circuit Design

    Directory of Open Access Journals (Sweden)

    Aaron Arthurs

    2012-07-01

    Full Text Available Ultra-low voltage digital circuit design is an active research area, especially for portable applications such as wearable electronics, intelligent remote sensors, implantable medical devices, and energy-harvesting systems. Due to their application scenarios and circuit components, two major goals for these systems are minimizing energy consumption and improving compatibility with low-voltage power supplies and analog components. The most effective solution to achieve these goals is to reduce the supply voltage, which,however, raises the issue of operability. At ultra-low supply voltages, the integrity of digital signals degrades dramatically due to the indifference between active and leakage currents. In addition, the system timing becomes more unpredictable as the impact of process and supply voltage variations being more significant at lower voltages. This paper presents a comparative study among three techniques for designing digital circuits operating at ultra-low voltages, i.e., Schmitt-triggered gate structure, delayinsensitive asynchronous logic, and Fully-Depleted Silicon-on-Insulator technology. Results show that despite the tradeoffs, all eight combinations of these techniques are viable for designing ultra-low voltage circuits. For a given application, the optimum circuit design can be selected from these combinations based on the lowest voltage, the dynamic range, the power budget, the performance requirement, and the available semiconductor process node.

  20. A Comparative Study of Ultra-Low Voltage Digital Circuit Design

    Directory of Open Access Journals (Sweden)

    Aaron Arthurs,

    2012-06-01

    Full Text Available Ultra-low voltage digital circuit design is an active research area, especially for portable applications such as wearable electronics, intelligent remote sensors, implantable medical devices, and energy-harvesting systems. Due to their application scenarios and circuit components, two major goals for these systems are minimizing energy consumption and improving compatibility with low-voltage power supplies and analog components. The most effective solution to achieve these goals is to reduce the supply voltage, which,however, raises the issue of operability. At ultra-low supply voltages, the integrity of digital signals degrades dramatically due to the indifference between active and leakage currents. In addition, the system timing becomes more unpredictable as the impact of process and supply voltage variations being more significant at lower voltages. This paper presents a comparative study among three techniques for designing digital circuits operating at ultra-low voltages, i.e., Schmitt-triggered gate structure, delay insensitive asynchronous logic, and Fully-Depleted Silicon-on-Insulator technology. Results show that despite the trade offs, all eight combinations of these techniques are viable for designing ultra-low voltage circuits. For a given application, the optimum circuit design can be selected from these combinations based on the lowest voltage, the dynamic range, the power budget, the performance requirement, and the available semiconductor process node.

  1. CFD Simulation of Transonic Flow in High-Voltage Circuit Breaker

    Directory of Open Access Journals (Sweden)

    Xiangyang Ye

    2012-01-01

    Full Text Available A high-voltage circuit breaker is an indispensable piece of equipment in the electric transmission and distribution systems. Transonic flow typically occurs inside breaking chamber during the current interruption, which determines the insulating characteristics of gas. Therefore, accurate compressible flow simulations are required to improve the prediction of the breakdown voltages in various test duties of high-voltage circuit breakers. In this work, investigation of the impact of the solvers on the prediction capability of the breakdown voltages in capacitive switching is presented. For this purpose, a number of compressible nozzle flow validation cases have been presented. The investigation is then further extended for a real high-voltage circuit breaker geometry. The correlation between the flow prediction accuracy and the breakdown voltage prediction capability is identified.

  2. 30 CFR 75.901 - Protection of low- and medium-voltage three-phase circuits used underground.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of low- and medium-voltage three... Underground Low- and Medium-Voltage Alternating Current Circuits § 75.901 Protection of low- and medium-voltage three-phase circuits used underground. (a) Low- and medium-voltage three-phase alternating-current...

  3. Note: Complementary metal-oxide-semiconductor high voltage pulse generation circuits.

    Science.gov (United States)

    Sun, Jiwei; Wang, Pingshan

    2013-10-01

    We present two types of on-chip pulse generation circuits. The first is based on CMOS pulse-forming-lines (PFLs). It includes a four-stage charge pump, a four-stacked-MOSFET switch and a 5 mm long PFL. The circuit is implemented in a 0.13 μm CMOS process. Pulses of ~1.8 V amplitude with ~135 ps duration on a 50 Ω load are obtained. The obtained voltage is higher than 1.6 V, the rated operating voltage of the process. The second is a high-voltage Marx generator which also uses stacked MOSFETs as high voltage switches. The output voltage is 11.68 V, which is higher than the highest breakdown voltage (~10 V) of the CMOS process. These results significantly extend high-voltage pulse generation capabilities of CMOS technologies.

  4. High-voltage integrated transmitting circuit with differential driving for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Færch, Kjartan Ullitz

    2016-01-01

    In this paper, a high-voltage integrated differential transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is presented. Due to its application, area and power consumption are critical and need to be minimized. The circuitry...... is designed and implemented in AMS 0.35 μ m high-voltage process. Measurements are performed on the fabricated integrated circuit in order to assess its performance. The transmitting circuit consists of a low-voltage control logic, pulse-triggered level shifters and a differential output stage that generates...... pulses at differential voltage levels of 60, 80 and 100 V, a frequency up to 5 MHz and a measured driving strength of 2.03 V/ns with the CMUT electrical model connected. The total on-chip area occupied by the transmitting circuit is 0.18 mm2 and the power consumption at the ultrasound scanner operation...

  5. Low-Voltage Process-Compensated VCO with On-Chip Process Monitoring and Body-Biasing Circuit Techniques

    OpenAIRE

    Ueno, Ken; Hirose, Tetsuya; Asai, Tetsuya; Amemiya, Yoshihito

    2009-01-01

    A voltage-controlled oscillator (VCO) tolerant to process variations at lower supply voltage was proposed. The circuit consists of an on-chip threshold-voltage-monitoring circuit, a current-source circuit, a body-biasing control circuit, and the delay cells of the VCO. Because variations in low-voltage VCO frequency are mainly determined by that of the current in delay cells. a current-compensation technique was adopted by using an on-chip threshold-voltage-monitoring circuit and body-biasing...

  6. Optimal condition of memristance enhancement circuit using external voltage source

    Directory of Open Access Journals (Sweden)

    Hiroya Tanaka

    2014-05-01

    Full Text Available Memristor provides nonlinear response in the current-voltage characteristic and the memristance is modulated using an external voltage source. We point out by solving nonlinear equations that an optimal condition of the external voltage source exists for maximizing the memristance in such modulation scheme. We introduce a linear function to describe the nonlinear time response and derive an important design guideline; a constant ratio of the frequency to the amplitude of the external voltage source maximizes the memristance. The analysis completely accounts for the memristance behavior.

  7. A Voltage Doubler Circuit to Extend the Soft-switching Range of Dual Active Bridge Converters

    DEFF Research Database (Denmark)

    Qin, Zian; Shen, Yanfeng; Wang, Huai;

    2017-01-01

    A voltage doubler circuit is realized to extend the soft-switching range of Dual Active Bridge (DAB) converters. No extra hardware is added to the DAB to form this circuit, since it is composed of the dc blocking capacitor and the low side full bridge converter, which already exist in DAB. With t...

  8. 30 CFR 75.802 - Protection of high-voltage circuits extending underground.

    Science.gov (United States)

    2010-07-01

    ... underground. 75.802 Section 75.802 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as...

  9. Series-connected substrate-integrated lead-carbon hybrid ultracapacitors with voltage-management circuit

    Indian Academy of Sciences (India)

    A Banerjee; R Srinivasan; A K Shukla

    2015-02-01

    Cell voltage for a fully charged-substrate-integrated lead-carbon hybrid ultracapacitor is about 2.3 V. Therefore, for applications requiring higher DC voltage, several of these ultracapacitors need to be connected in series. However, voltage distribution across each series-connected ultracapacitor tends to be uneven due to tolerance in capacitance and parasitic parallel-resistance values. Accordingly, voltage-management circuit is required to protect constituent ultracapacitors from exceeding their rated voltage. In this study, the design and characterization of the substrate-integrated lead-carbon hybrid ultracapacitor with co-located terminals is discussed. Voltage-management circuit for the ultracapacitor is presented, and its effectiveness is validated experimentally.

  10. Interface circuit with adjustable bias voltage enabling maximum power point tracking of capacitive energy harvesting devices

    Science.gov (United States)

    Wei, J.; Lefeuvre, E.; Mathias, H.; Costa, F.

    2016-12-01

    The operation analysis of a new interface circuit for electrostatic vibration energy harvesting with adjustable bias voltage is carried out in this paper. Two configurations determined by the open or closed states of an electronic switch are examined. The increase of the voltage across a biasing capacitor, occurring when the switch is open, is proved theoretically and experimentally. With the decrease of this biasing voltage which occurs naturally when the switch is closed due to imperfections of the circuit, the bias voltage can be maintained close to a target value by appropriate ON and OFF control of the switch. As the energy converted by the variable capacitor on each cycle depends on the bias voltage, this energy can be therefore accurately controlled. This feature opens up promising perspectives for optimization the power harvested by electrostatic devices. Simulation results with and without electromechanical coupling effect are presented. In experimental tests, a simple switch control enabling to stabilize the bias voltage is described.

  11. Voltage-Mode All-Pass Filters Including Minimum Component Count Circuits

    Directory of Open Access Journals (Sweden)

    Sudhanshu Maheshwari

    2007-01-01

    Full Text Available This paper presents two new first-order voltage-mode all-pass filters using a single-current differencing buffered amplifier and four passive components. Each circuit is compatible to a current-controlled current differencing buffered amplifier with only two passive elements, thus resulting in two more circuits, which employ a capacitor, a resistor, and an active element, thus using a minimum of active and passive component counts. The proposed circuits possess low output impedance, and hence can be easily cascaded for voltage-mode systems. PSPICE simulation results are given to confirm the theory.

  12. Analysis and calculation of lightning-induced voltages in aircraft electrical circuits

    Science.gov (United States)

    Plumer, J. A.

    1974-01-01

    Techniques to calculate the transfer functions relating lightning-induced voltages in aircraft electrical circuits to aircraft physical characteristics and lightning current parameters are discussed. The analytical work was carried out concurrently with an experimental program of measurements of lightning-induced voltages in the electrical circuits of an F89-J aircraft. A computer program, ETCAL, developed earlier to calculate resistive and inductive transfer functions is refined to account for skin effect, providing results more valid over a wider range of lightning waveshapes than formerly possible. A computer program, WING, is derived to calculate the resistive and inductive transfer functions between a basic aircraft wing and a circuit conductor inside it. Good agreement is obtained between transfer inductances calculated by WING and those reduced from measured data by ETCAL. This computer program shows promise of expansion to permit eventual calculation of potential lightning-induced voltages in electrical circuits of complete aircraft in the design stage.

  13. Short-circuit protection of LLC resonant converter using voltages across resonant tank elements

    Directory of Open Access Journals (Sweden)

    Denys Igorovych Zaikin

    2015-06-01

    Full Text Available This paper describes two methods for the short-circuit protection of the LLC resonant converter. One of them uses the voltage across the capacitor and the other uses the voltage across the inductor of the resonant tank. These voltages can be processed (integrated or differentiated to recover the resonant tank current. The two circuits illustrated in the described methods make it possible to develop a robust LLC converter design and to avoid using lossy current measurement elements, such as a shunt resistor or current transformer. The methods also allow measuring resonant tank current without breaking high-current paths and connecting the measuring circuit in parallel with the inductor or capacitor of the resonant tank. Practical implementations of these indirect current measurements have been experimentally tested for the short-circuit protection of the 1600 W LLC converter.

  14. High-voltage integrated transmitting circuit with differential driving for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Færch, Kjartan Ullitz;

    2016-01-01

    In this paper, a high-voltage integrated differential transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is presented. Due to its application, area and power consumption are critical and need to be minimized. The circuitry...... is designed and implemented in AMS 0.35 μ m high-voltage process. Measurements are performed on the fabricated integrated circuit in order to assess its performance. The transmitting circuit consists of a low-voltage control logic, pulse-triggered level shifters and a differential output stage that generates...... conditions is 0.936 mW including the load. The integrated circuits measured prove to be consistent and robust to local process variations by measurements....

  15. Maximum Output Power Control Using Short-Circuit Current and Open-Circuit Voltage of a Solar Panel

    Science.gov (United States)

    Kato, Takahiro; Miyake, Takuma; Tashima, Daisuke; Sakoda, Tatsuya; Otsubo, Masahisa; Hombu, Mitsuyuki

    2012-10-01

    A control method to optimize the output power of a solar cell is necessary because the output of a solar cell strongly depends on solar radiation. We here proposed two output power control methods using the short-circuit current and open-circuit voltage of a solar panel. One of them used a current ratio and a voltage ratio (αβ control), and the other used a current ratio and a short-circuit current-electric power characteristic coefficient (αγ control). The usefulness of the αβ and the αγ control methods was evaluated. The results showed that the output power controlled by our proposed methods was close to the maximum output power of a solar panel.

  16. Design and Implementation of Voltage-Mode MIN/MAX Circuits

    Directory of Open Access Journals (Sweden)

    M. Soleimani

    2015-12-01

    Full Text Available In this paper, a general architecture for analog implementation of MIN/MAX and other rank order circuits is presented. Based on general architecture, proposed MIN/MAX circuits are implemented. The proposed circuits are composed of a differential amplifier with merged n-inputs and a MCSAL circuit to choose the desired input. The advantages of the proposed structure are simplicity, very high resolution, very low supply voltage requirements, very low output resistor, low power dissipation, low active area and simple expansion for multiple inputs by adding only three transistors for each extra input. The post-layout simulation results of proposed circuits are presented by HSPICE software in 0.35-µm CMOS process technology. The total power dissipation of proposed circuits is about 110-µW. Also, the total active area is about 550-µm2 for five-input proposed circuits, and would be negligibly increased for each extra input.

  17. 30 CFR 77.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

    Science.gov (United States)

    2010-07-01

    ... circuits on high-voltage resistance grounded systems. On and after September 30, 1971, all high-voltage, resistance grounded systems shall include a fail safe ground check circuit or other no less effective device... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits on...

  18. 30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits on high-voltage resistance grounded systems. 75.803 Section 75.803 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance...

  19. Effect of Circuit Breaker Shunt Resistance on Chaotic Ferroresonance in Voltage Transformer

    Directory of Open Access Journals (Sweden)

    RADMANESH, H.

    2010-08-01

    Full Text Available Ferroresonance or nonlinear resonance is a complex electrical phenomenon, which may cause over voltages and over currents in the electrical power system which endangers the system reliability and continuous safe operating. This paper studies the effect of circuit breaker shunt resistance on the control of chaotic ferroresonance in a voltage transformer. It is expected that this resistance generally can cause ferroresonance dropout. For confirmation this aspect Simulation has been done on a one phase voltage transformer rated 100VA, 275kV. The magnetization characteristic of the transformer is modeled by a single-value two-term polynomial with q=7. The simulation results reveal that considering the shunt resistance on the circuit breaker, exhibits a great mitigating effect on ferroresonance over voltages. Significant effect on the onset of chaos, the range of parameter values that may lead to chaos along with ferroresonance voltages has been obtained and presented.

  20. A Protection Circuit for DC-DC Converter with Voltage Doubler

    Directory of Open Access Journals (Sweden)

    D.Elangovan

    2012-12-01

    Full Text Available This paper proposes a method to obtain a protected voltage gain by employing a protection circuit for the voltage doubler or multiplier circuit in an isolated tyde DC-DC Converter. The entire set up consists of a phase shift converter with a protected bridge/voltage doubler rectifier on the output side. The operating frequency of the phase shift converter is 20-25kHz (depending on the requirement of the application which is high enough to improve the efficiency. Ferrite core transformer is used in place of ordinary air core transformer, which is small in size with number of turns of the transformer is reduced and the overall power density is increased. The doubler circuit consists of electrolytic capacitors, which are rated at 400V in order to comply with IEC65 requirements. This paper proposes an “electrolytic capacitor protection circuit”, which enables the voltage rating of the electrolytics to be reduced to 250V. This circuit results in cost savings of more than 50% in the price of the electrolytic filter capacitors. The circuits were simulated using PSPICE SOFTWARE and the following results were obtained. For an input voltage of 200V, an output of 200V and400V were obtained in bridge mode and doubler mode respectively.

  1. A Novel 800mV Reference Current Source Circuit for Low-Power Low-Voltage Mixed-Mode Systems

    Science.gov (United States)

    Kwon, Oh Jun; Kwack, Kae Dal

    In this paper, a novel 800mV beta-multiplier reference current source circuit is presented. In order to cope with the narrow input common-mode range of the Opamp in the reference circuit, the resistive voltage divider was employed. High gain Opamp was designed to compensate for the intrinsic low output resistance of the MOS transistors. The proposed reference circuit was designed in a standard 0.18µm CMOS process with nominal Vth of 420mV and -450mV for n-MOS and p-MOS transistor, respectively. The total power consumption including Opamp is less than 50µW.

  2. Simulation Analysis for Opening Performance of Medium Voltage Vacuum Circuit Breaker Based on ADAMS and Maxwell

    Directory of Open Access Journals (Sweden)

    Ding Xianliang

    2017-01-01

    Full Text Available The circuit breakers play a important role in control and protect the power systemand the vacuum circuit breaker has beenwidely used in the field of medium voltage with its excellent opening performance.Virtual prototyping technology is alsobecamemore and more popularin design and optimization of the vacuum circuit breaker. In this paper, the electromagnetic simulation software Ansoft Maxwell is used to analyze the electric repulsion of the circuit breaker in the case of open the rated short circuit breaking current. The 3D model that wasbuilt by CREOis imported into ADAMS. Thenconstraints, contact force, and the electric repulsion forcethat was analysezed in Ansoft Maxwell is added into the 3D model.Therefore, we can carry on the multi-body dynamics simulation to the 3D model. Then We can get the openingperformance of the vacuum circuit breakerin the condition of open circuit rated short circuit breaking current. The simulation results show that the circuit breaker can still meet the performance requirements in the condition of open circuit rated short circuit breaking current.

  3. Low-power operation using self-timed circuits and adaptive scaling of the supply voltage

    DEFF Research Database (Denmark)

    Nielsen, Lars Skovby; Niessen, C.; Sparsø, Jens

    1994-01-01

    Recent research has demonstrated that for certain types of applications like sampled audio systems, self-timed circuits can achieve very low power consumption, because unused circuit parts automatically turn into a stand-by mode. Additional savings may be obtained by combining the self...... of voltage scaling has been used previously in synchronous circuits, and the contributions of the present paper are: 1) the combination of supply scaling and self-timed circuitry which has some unique advantages, and 2) the thorough analysis of the power savings that are possible using this technique.>......-timed circuits with a mechanism that adaptively adjusts the supply voltage to the smallest possible, while maintaining the performance requirements. This paper describes such a mechanism, analyzes the possible power savings, and presents a demonstrator chip that has been fabricated and tested. The idea...

  4. Background voltage distortion influence on power electric systems in the presence of the Steinmetz circuit

    Energy Technology Data Exchange (ETDEWEB)

    Sainz, Luis; Pedra, Joaquin [Department of Electrical Engineering, ETSEIB-UPC, Av. Diagonal 647, 08028 Barcelona (Spain); Caro, Manuel [IDOM Ingenieria y Arquitectura, C. Barcas 2, 46002 Valencia (Spain)

    2009-01-15

    In traction systems, it is usual to connect reactances in delta configuration with single-phase loads to reduce voltage unbalances and avoid electric system operation problems. This set is known as Steinmetz circuit. Parallel and series resonances can occur due to the capacitive reactance of the Steinmetz circuit and affect power quality. In this paper, the series resonance ''observed'' from the supply system is numerically located. The study of this resonance is important to avoid problems due to background voltage distortion. Experimental measurements are also presented to validate the obtained numerical results. (author)

  5. On-line Monitoring System based on Vibration Signal of High Voltage Circuit Breaker

    Directory of Open Access Journals (Sweden)

    Chao Fu

    2014-04-01

    Full Text Available High voltage circuit breaker is one of the most important switch apparatus in electrical power system. It play a role in the switch control, which can be used to switch the operating mode during normal operation (the equipment run or quit. In order to ensure the normal operation of the grid, it can be removed quickly when a malfunction on the device or circuit. Real-time online monitoring of high voltage circuit breaker can understand the running status, master the operation characteristics and its tend of development. As early as possible find the potential faults then take preventive measures timely, so as to ensure the reliable operation of power system. Online monitoring of high voltage circuit breakers can reduce the premature or unnecessary maintenance and maintenance cost, improve pertinence of the maintenance firstly. Secondly, it can improve the life of the switching device and improve the reliability of electric power system significantly. In this paper, on-line monitoring system based on vibration signal of high voltage circuit breaker is presented

  6. Nonfullerene Tandem Organic Solar Cells with High Open-Circuit Voltage of 1.97 V.

    Science.gov (United States)

    Liu, Wenqing; Li, Shuixing; Huang, Jiang; Yang, Shida; Chen, Jiehuan; Zuo, Lijian; Shi, Minmin; Zhan, Xiaowei; Li, Chang-Zhi; Chen, Hongzheng

    2016-11-01

    Small-molecule nonfullerene-based tandem organic solar cells (OSCs) are fabricated for the first time by utilizing P3HT:SF(DPPB)4 and PTB7-Th:IEIC bulk heterojunctions as the front and back subcells, respectively. A power conversion efficiency of 8.48% is achieved with an ultrahigh open-circuit voltage of 1.97 V, which is the highest voltage value reported to date among efficient tandem OSCs.

  7. Operating Circuit Fault Diagnosis of High Voltage Circuit Breaker%高压断路器操作回路的故障诊断

    Institute of Scientific and Technical Information of China (English)

    赵红宇; 龙树峰

    2015-01-01

    This paper analyzes and studies the fault diagnosis operation requirements of high voltage circuit breaker operation circuit and the fault diagnosis method of high voltage circuit breaker.%本文对高压断路器操作回路的故障诊断操作要求和高压断路器操作回路的故障诊断方法进行了分析和研究。

  8. Characterization of interdigitated electrode structures for water contaminant detection using a hybrid voltage divider and a vector network analyzer.

    Science.gov (United States)

    Rodríguez-Delgado, José Manuel; Rodríguez-Delgado, Melissa Marlene; Mendoza-Buenrostro, Christian; Dieck-Assad, Graciano; Omar Martínez-Chapa, Sergio

    2012-01-01

    Interdigitated capacitive electrode structures have been used to monitor or actuate over organic and electrochemical media in efforts to characterize biochemical properties. This article describes a method to perform a pre-characterization of interdigitated electrode structures using two methods: a hybrid voltage divider (HVD) and a vector network analyzer (VNA). Both methodologies develop some tests under two different conditions: free air and bi-distilled water media. Also, the HVD methodology is used for other two conditions: phosphate buffer with laccase (polyphenoloxidase; EC 1.10.3.2) and contaminated media composed by a mix of phosphate buffer and 3-ethylbenzothiazoline-6-sulfonic acid (ABTS). The purpose of this study is to develop and validate a characterization methodology using both, a hybrid voltage divider and VNA T-# network impedance models of the interdigitated capacitive electrode structure that will provide a shunt RC network of particular interest in detecting the amount of contamination existing in the water solution for the media conditions. This methodology should provide us with the best possible sensitivity in monitoring water contaminant media characteristics. The results show that both methods, the hybrid voltage divider and the VNA methodology, are feasible in determining impedance modeling parameters. These parameters can be used to develop electric interrogation procedures and devices such as dielectric characteristics to identify contaminant substances in water solutions.

  9. Complemenary body driving - a low voltage analog circuit technique for SOI

    Science.gov (United States)

    Mojarradi, M. M.; Terry, S.; Blalock, B. J.; Yong, L.; Dufrene, B.

    2002-01-01

    This paper describes several analog circuit primitives that utilize the body terminal as a signal port. A cascode current mirror that can operate with an input and output voltage of 200 mV; and a rail-to-rail, constant transconductance gain block capable of 1 V operation are presented. These circuits have been implemented in a standard 0.351 partially-depleted Silicon-on-Insulator (PDSOI) CMOS process and should find wide application in next-generation analog circuit designs.

  10. Ultra-low-voltage design of energy-efficient digital circuits

    CERN Document Server

    Reynders, Nele

    2015-01-01

    This book focuses on increasing the energy-efficiency of electronic devices so that portable applications can have a longer stand-alone time on the same battery. The authors explain the energy-efficiency benefits that ultra-low-voltage circuits provide and provide answers to tackle the challenges which ultra-low-voltage operation poses. An innovative design methodology is presented, verified, and validated by four prototypes in advanced CMOS technologies. These prototypes are shown to achieve high energy-efficiency through their successful functionality at ultra-low supply voltages.

  11. Battery open-circuit voltage estimation by a method of statistical analysis

    NARCIS (Netherlands)

    Snihir, Iryna; Rey, William; Verbitskiy, Evgeny; Belfadhel-Ayeb, Afifa; Notten, Peter H.L.

    2006-01-01

    The basic task of a battery management system (BMS) is the optimal utilization of the stored energy and minimization of degradation effects. It is critical for a BMS that the state-of-charge (SoC) be accurately determined. Open-circuit voltage (OCV) is directly related to the state-of-charge of the

  12. Transistorized Marx bank pulse circuit provides voltage multiplication with nanosecond rise-time

    Science.gov (United States)

    Jung, E. A.; Lewis, R. N.

    1968-01-01

    Base-triggered avalanche transistor circuit used in a Marx bank pulser configuration provides voltage multiplication with nanosecond rise-time. The avalanche-mode transistors replace conventional spark gaps in the Marx bank. The delay time from an input signal to the output signal to the output is typically 6 nanoseconds.

  13. Improvement of high-voltage staircase drive circuit waveform for high-intensity therapeutic ultrasound

    Science.gov (United States)

    Tamano, Satoshi; Jimbo, Hayato; Azuma, Takashi; Yoshizawa, Shin; Fujiwara, Keisuke; Itani, Kazunori; Umemura, Shin-Ichiro

    2016-07-01

    Recently, in the treatment of diseases such as cancer, noninvasive or low-invasive modality, such as high-intensity focused ultrasound (HIFU), has been put into practice as an alternative to open surgery. HIFU induces thermal ablation of the target tissue to be treated. To improve the efficiency of HIFU, we have proposed a “triggered-HIFU” technique, which uses the combination of a short-duration, high-voltage transmission and a long-duration, medium-voltage transmission. In this method, the transmission device must endure high peak voltage for the former and the high time-average power for the latter. The triggered-HIFU sequence requires electronic scanning of the HIFU focus to maximize its thermal efficiency. Therefore, the transmission device must drive an array transducer with the number of elements on the order of a hundred or more, which requires that each part of the device that drives each element must be compact. The purpose of this work is to propose and construct such a transmission device by improving the staircase drive circuit, which we previously proposed. The main point of improvement is that both N and P MOSFETs are provided for each staircase voltage level instead of only one of them. Compared with the previous ultrasonic transmission circuit, high-voltage spikes were significantly reduced, the power consumption was decreased by 26.7%, and the transmission circuit temperature rise was decreased by 14.5 °C in the triggered-HIFU heating mode.

  14. Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery

    Institute of Scientific and Technical Information of China (English)

    CHENG Zai-Jun; SAN Hai-Sheng; CHEN Xu-Yuan; LIU Bo; FENG Zhi-Hong

    2011-01-01

    A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated.Under the irradiation of a 4× 4mm2 planar solid 63Ni source with an activity of 2mCi,the open-circuit voltage Voc of the fabricated single 2x2mm2 cell reaches as high as 1.62 V,the short-circuit current density Jsc is measured to be 16nA/cm2.The microbattery has a fill factor of 55%,and the energy conversion effciency of beta radiation into electricity reaches to 1.13%.The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.

  15. Modeling of the Voltage Waves in the LHC Main Dipole Circuits

    CERN Document Server

    Ravaioli, E; Formenti, F; Steckert, J; Thiesen, H; Verweij, A

    2012-01-01

    When a fast power abort is triggered in the LHC main dipole chain, voltage transients are generated at the output of the power converter and across the energy-extraction switches. The voltage waves propagate through the chain of 154 superconducting dipoles and can have undesired effects leading to spurious triggering of the quench protection system and firing of the quench heaters. The phase velocity of the waves travelling along the chain changes due to the inhomogeneous AC behavior of the dipoles. Furthermore, complex phenomena of reflection and superposition are present in the circuit. For these reasons analytical calculations are not sufficient for properly analyzing the circuit behavior after a fast power abort. The transients following the switch-off of the power converter and the opening of the switches are analyzed by means of a complete electrical model, developed with the Cadence© suite (PSpice© based). The model comprises all the electrical components of the circuit, additional components simula...

  16. Design and validation of a high-voltage levitation circuit for electrostatic accelerometers.

    Science.gov (United States)

    Li, G; Wu, S C; Zhou, Z B; Bai, Y Z; Hu, M; Luo, J

    2013-12-01

    A simple high-voltage circuit with a voltage range of 0 to 900 V and an open-loop bandwidth of 11 kHz is realized by using an operational amplifier and a MOSFET combination. The circuit is used for the levitation of a test mass of 71 g, suspended below the top-electrodes with a gap distance of 57 μm, so that the performance of an electrostatic accelerometer can be tested on the ground. The translation noise of the accelerometer, limited by seismic noise, is about 4 × 10(-8) m/s(2)/Hz(1/2) at 0.1 Hz, while the high-voltage coupling noise is one-order of magnitude lower.

  17. Thermodynamic derivation of open circuit voltage in vanadium redox flow batteries

    Science.gov (United States)

    Pavelka, Michal; Wandschneider, Frank; Mazur, Petr

    2015-10-01

    Open circuit voltage of vanadium redox flow batteries is carefully calculated using equilibrium thermodynamics. This analysis reveals some terms in the Nernst relation which are usually omitted in literature. Due to the careful thermodynamic treatment, all uncertainties about the form of Nernst relation are removed except for uncertainties in activity coefficients of particular species. Moreover, it is shown (based again on equilibrium thermodynamics) that batteries with anion-exchange membranes follow different Nernst relation than batteries with cation-exchange membranes. The difference is calculated, and it is verified experimentally that the formula for anion-exchange membranes describes experiments with anion-exchange membranes better than the corresponding formula for cation-exchange membranes. In summary, careful thermodynamic calculation of open circuit voltage of vanadium redox flow batteries is presented, and the difference between voltage for anion-exchange and cation-exchange membranes is revealed.

  18. Effect of polymer aggregation on the open circuit voltage in organic photovoltaic cells: aggregation-induced conjugated polymer gel and its application for preventing open circuit voltage drop.

    Science.gov (United States)

    Kim, Bong-Gi; Jeong, Eun Jeong; Park, Hui Joon; Bilby, David; Guo, L Jay; Kim, Jinsang

    2011-03-01

    To investigate the structure-dependent aggregation behavior of conjugated polymers and the effect of aggregation on the device performance of conjugated polymer photovoltaic cells, new conjugated polymers (PVTT and CN-PVTT) having the same regioregularity but different intermolecular packing were prepared and characterized by means of UV-vis spectroscopy and atomic force microscopy (AFM). Photovoltaic devices were prepared with these polymers under different polymer-aggregate conditions. Polymer aggregation induced by thermal annealing increases the short circuit current but provides no advantage in the overall power conversion efficiency because of a decrease in the open circuit voltage. The device fabricated from a pre-aggregated polymer suspension, acquired from ultrasonic agitation of a conjugated polymer gel, showed enhanced performance because of better phase separation and reduced recombination between polymer/PCBM.

  19. Distance protection of multiple-circuit shared tower transmission lines with different voltages. Part II: Fault loop impedance

    DEFF Research Database (Denmark)

    Silva, Filipe Miguel Faria da; Bak, Claus Leth

    2017-01-01

    Multiple-circuit transmission lines combining different voltage levels in one tower present extra challenges when setting a protection philosophy, as faults between voltage levels are possible. In this paper, the fault loop impedance of combined faults is compared with the fault loop impedance...... of single-phase-to-ground faults at the higher voltage level of the multiple-circuit line and it is demonstrated that they are similar for high short-circuit powers; however, the fault loop impedance of a combined fault may increase substantially as the short-circuit power of the system decreases......-phase-to-ground faults are also capable of protecting the line against combined faults, being only advisable to increase the resistive limit of the protection zone if the network has lower short-circuit power. If the length of the line at lower voltage level is less than of the lien at higher voltage level...

  20. A band-gap voltage reference for interface circuit of microsensor

    Institute of Scientific and Technical Information of China (English)

    CAO Yi-jiang; XIAO Fei; ZHANG Er-dong

    2010-01-01

    A high performance CMOS band-gap voltage reference circuit that can be used in interface integrated circuit of microsenser and compatible with 0.6 μm (double poly) mix process is proposed in this paper.The circuit can be employed in the range of 1.8-8 V and carry out the first-order PTAT (proportional to absolute temperature) temperature compensation.Through using a two-stage op-amp with a NMOS input pair as a negative feedback op-amp,the PSRR (power supply rejection ratio) of the entire circuit is increased,and the temperature coefficient of reference voltage is decreased.Results from HSPICE simulation show that the PSRR is -72.76 dB in the condition of low-frequency,the temperature coefficient is 2.4×10-6 in the temperature range from-10 ℃ to 90℃ and the power dissipation is only 14 μW when the supply voltage is 1.8 V.

  1. Anomalous open-circuit voltage from a high-Tc superconducting dynamo

    Science.gov (United States)

    Bumby, C. W.; Jiang, Zhenan; Storey, J. G.; Pantoja, A. E.; Badcock, R. A.

    2016-03-01

    We report on the behavior of a high-Tc superconducting (HTS) homopolar dynamo which outputs a DC open-circuit voltage when the stator is in the superconducting state, but behaves as a conventional AC alternator when the stator is in the normal state. We observe that this time-averaged DC voltage arises from a change in the shape of the AC voltage waveform that is obtained from a normal conducting stator. The measured DC voltage is proportional to frequency, and decreases with increasing flux gap between the rotor magnet and the HTS stator wire. We observe that the DC output voltage decreases to zero at large flux gaps, although small differences between the normal-conducting and superconducting waveforms are still observed, which we attribute to screening currents in the HTS stator wire. Importantly, the normalised pulse shape is found to be a function of the rotor position angle only. Based on these observations, we suggest that the origin of this unexpected DC effect can be explained by a model first proposed by Giaever, which considers the impact of time-varying circulating eddy currents within the HTS stator wire. Such circulating currents form a superconducting shunt path which "short-circuits" the high field region directly beneath the rotor magnet, at those points in the cycle when the rotor magnet partially overlaps the superconducting stator wire. This reduces the output voltage from the device during these periods of the rotor cycle, leading to partial rectification of the output voltage waveform and hence the emergence of a time-averaged DC voltage.

  2. Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

    Science.gov (United States)

    Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

    2012-01-01

    Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

  3. Pressure and Arc Voltage Measurement in a 252 kV SF6 Puffer Circuit Breaker

    Institute of Scientific and Technical Information of China (English)

    ZHONG Jianying; GUO Yujing; ZHANG Hao

    2016-01-01

    The pressure distribution in an arcing chamber is critically important for the SF6 puffer circuit breaker design.In this paper,the pressure variation of four locations in the nozzle was measured by piezoresistive and fiber optical pressure sensors at two current levels of 10 kA and 50 kA.An arc voltage measurement was also taken.The results demonstrate that using either type of sensor with a connecting tube is able to detect the fast pressure variation in circuit breakers,however the possible distortion and delay to the pressure transient caused by the tube need further study.

  4. FEA identification of high order generalized equivalent circuits for MF high voltage transformers

    CERN Document Server

    Candolfi, Sylvain; Cros, Jérôme; Aguglia, Davide

    2015-01-01

    This paper presents a specific methodology to derive high order generalized equivalent circuits from electromagnetic finite element analysis for high voltage medium frequency and pulse transformers by splitting the main windings in an arbitrary number of elementary windings. With this modeling approach, the dynamic model of the transformer over a large bandwidth is improved and the order of the generalized equivalent circuit can be adapted to a specified bandwidth. This efficient tool can be used by the designer to quantify the influence of the local structure of transformers on their dynamic behavior. The influence of different topologies and winding configurations is investigated. Several application examples and an experimental validation are also presented.

  5. Pressure and Arc Voltage Measurement in a 252 kV SF6 Puffer Circuit Breaker

    Science.gov (United States)

    Zhong, Jianying; Guo, Yujing; Zhang, Hao

    2016-05-01

    The pressure distribution in an arcing chamber is critically important for the SF6 puffer circuit breaker design. In this paper, the pressure variation of four locations in the nozzle was measured by piezoresistive and fiber optical pressure sensors at two current levels of 10 kA and 50 kA. An arc voltage measurement was also taken. The results demonstrate that using either type of sensor with a connecting tube is able to detect the fast pressure variation in circuit breakers, however the possible distortion and delay to the pressure transient caused by the tube need further study.

  6. Evaluation and Simulation of Black-box Arc Models for High-Voltage Circuit-Breakers

    OpenAIRE

    Gustavsson, Niklas

    2004-01-01

    The task for this Master thesis was to evaluate different black-box arc models for circuit-breakers with the purpose of finding criteria for the breaking ability. A black-box model is a model that requires no knowledge from the user of the underlying physical processes. Black-box arc models have been used in circuit-breaker development for many years. Arc voltages from tests made in the High Power Laboratory in Ludvika were used for validation, along with the resistance calculated at current ...

  7. Simulation of the Effects of Several Factors on Arc Plasma Behavior in Low Voltage Circuit Breaker

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    Taking into account the properties of the arc plasma and the electromagnetic, heat and radiative phenomena, commercial computational fluid dynamics software PHOENICS has been adapted and modified to develop the three-dimensional magneto-hydrodynamic (MHD)model of arc in a low voltage circuit breaker. The effects of the arc ignition location, venting size and gassing material on arc behavior have been investigated. The analysis of the results show that the arc velocity accelerates with the increase in the distance between arc ignition location and of the venting size, and the existence of the gassing material is beneficial to improving the arc voltage and reducing the arc temperature.

  8. A test technique for measuring lightning-induced voltages on aircraft electrical circuits

    Science.gov (United States)

    Walko, L. C.

    1974-01-01

    The development of a test technique used for the measurement of lightning-induced voltages in the electrical circuits of a complete aircraft is described. The resultant technique utilizes a portable device known as a transient analyzer capable of generating unidirectional current impulses similar to lightning current surges, but at a lower current level. A linear relationship between the magnitude of lightning current and the magnitude of induced voltage permitted the scaling up of measured induced values to full threat levels. The test technique was found to be practical when used on a complete aircraft.

  9. Design to conditioning circuits of dynamic compensation of reactive power in the intelligence voltage controller

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    <正>The paper introduces one design idea that making use of SCM to control Real-timely the dynamic compensation of reactive power.Firstly,design one Circuit to Sample the voltage and current,and by these datas we can easily calculate the power factor,and Voltage controller in the microcontroller to determine whether input the compensation capacitance according to the size of power factor,the paper also analyzes the principle of capacitance compensation and calculation method. Dynamic compensation for the entire process is quick and accurate.

  10. Origin of the high open circuit voltage in planar heterojunction perovskite solar cells: Role of the reduced bimolecular recombination

    Science.gov (United States)

    Yang, Wenchao; Yao, Yao; Wu, Chang-Qin

    2015-03-01

    The high open circuit voltage is an attractive feature for the currently popular organic-inorganic hybrid perovskite solar cells. In this paper, by employing the macroscopic device model simulation, we investigate its origin for the planar heterojunction perovskite solar cells. Based on the calculated current density-voltage characteristics, it is revealed that compared to the excitonic solar cells, the fast thermal-activated exciton dissociation in the bulk due to the small exciton binding energy may improve the short circuit current and the fill factor, but its beneficial role on the open circuit voltage is marginal. The most significant contribution for the open circuit voltage comes from the reduced bimolecular recombination. In the perovskites, with the recombination prefactor many orders of magnitude smaller than that based on the Langevin's theory, the internal charge density level is significantly enhanced and the density gradient is removed, leading to the high quasi-Fermi level splitting and thus the small open circuit voltage loss. For the nonradiative recombination pathway due to the deep trap states, it may induce significant loss of open circuit voltage as the trap density is high, while for the moderately low density its effect on the open circuit voltage is small and negligible.

  11. The Effect of Current-Limiting Reactors on the Tripping of Short Circuits in High-Voltage Electrical Equipment

    Energy Technology Data Exchange (ETDEWEB)

    Volkov, M. S.; Gusev, Yu. P., E-mail: GusevYP@mpei.ru; Monakov, Yu. V.; Cho, Gvan Chun [National Research University “Moscow Power Engineering Institute,” (Russian Federation)

    2016-01-15

    The insertion of current-limiting reactors into electrical equipment operating at a voltage of 110 and 220 kV produces a change in the parameters of the transient recovery voltages at the contacts of the circuit breakers for disconnecting short circuits, which could be the reason for the increase in the duration of the short circuit, damage to the electrical equipment and losses in the power system. The results of mathematical modeling of the transients, caused by tripping of the short circuit in a reactive electric power transmission line are presented, and data are given on the negative effect of a current-limiting resistor on the rate of increase and peak value of the transient recovery voltages. Methods of ensuring the standard requirements imposed on the parameters of the transient recovery voltages when using current-limiting reactors in the high-voltage electrical equipment of power plants and substations are proposed and analyzed.

  12. A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure

    Institute of Scientific and Technical Information of China (English)

    Liu Jizhi; Chen Xingbi

    2009-01-01

    A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate.

  13. Research on The Mechanical State Parameter Extraction Method of High Voltage Circuit Breakers

    Directory of Open Access Journals (Sweden)

    Yang Tianxu

    2013-05-01

    Full Text Available High voltage circuit breakers play an important role in the power system. So it is necessary to implement the state detection of breakers in order to ensure stable and reliable running of the grid. The purpose of state detection is to provide reliable basis of maintenance by extracting mechanical state parameters accurately. This paper mainly focuses on the coil current signal feature extraction algorithm. To settle the problem of too much noise mixed with the current signal and signal distortion, the discrete wavelet transform algorithm is used to extract the coil current signal parameters. This paper also designs the FIR filter to extract stroke and speed parameters from travel-time waveform. The experiments show that the difference between the theoretical results and test results processed by the method in this paper is very small and the test results are able to accurately reflect operation states and mechanical features of high voltage circuit breakers.

  14. A low-power circuit for piezoelectric vibration control by synchronized switching on voltage sources

    CERN Document Server

    Shen, Hui; Ji, Hongli; Zhu, Kongjun; Balsi, Marco; Giorgio, Ivan; dell'Isola, Francesco

    2010-01-01

    In the paper, a vibration damping system powered by harvested energy with implementation of the so-called SSDV (synchronized switch damping on voltage source) technique is designed and investigated. In the semi-passive approach, the piezoelectric element is intermittently switched from open-circuit to specific impedance synchronously with the structural vibration. Due to this switching procedure, a phase difference appears between the strain induced by vibration and the resulting voltage, thus creating energy dissipation. By supplying the energy collected from the piezoelectric materials to the switching circuit, a new low-power device using the SSDV technique is proposed. Compared with the original self-powered SSDI (synchronized switch damping on inductor), such a device can significantly improve its performance of vibration control. Its effectiveness in the single-mode resonant damping of a composite beam is validated by the experimental results.

  15. Distance protection of multiple-circuit shared tower transmission lines with different voltages. Part I: Fault current magnitude

    DEFF Research Database (Denmark)

    Silva, Filipe Miguel Faria da; Bak, Claus Leth

    2017-01-01

    Multiple-circuit transmission lines combining different voltage levels in one tower present extra challenges when setting a protection philosophy, as faults between voltage levels are possible. This paper presents a detailed theoretical analysis of such combined faults, including the development...... of a formula for estimating the magnitude of the short-circuit current. It is demonstrated that if the faulted phase from the higher voltage level leads the faulted phase from the lower voltage level, a distance relay at the higher voltage level sees the fault in the forward direction, whereas a distance relay...... at the lower voltage level sees the fault in the reverse direction. The opposite happens if the lower voltage level leads the higher voltage level. It is also demonstrated that the magnitude of fault currents of combined faults is normally slightly larger than of equivalent single-phase-to-ground fault...

  16. Relationship of Open-Circuit Voltage to CdTe Hole Concentration and Lifetime

    Energy Technology Data Exchange (ETDEWEB)

    Duenow, Joel N.; Burst, James M.; Albin, David S.; Reese, Matthew O.; Jensen, Soren A.; Johnston, Steven W.; Kuciauskas, Darius; Swain, Santosh K.; Ablekim, Tursun; Lynn, Kelvin G.; Fahrenbruch, Alan L.; Metzger, Wyatt K.

    2016-11-01

    We investigate the correlation of bulk CdTe and CdZnTe material properties with experimental open-circuit voltage (Voc) through fabrication and characterization of diverse single-crystal solar cells with different dopants. Several distinct crystal types reach Voc >900 mV. Correlations are in general agreement with Voc limits modeled from bulk minority-carrier lifetime and hole concentration.

  17. Driving CZTS to the SQ Limit: Solving the Open Circuit Voltage Problem

    Energy Technology Data Exchange (ETDEWEB)

    Haight, Richard A. [IBM Research, Yorktown, NY (United States). Thomas J. Watson Research Center; McCandless, Brian E. [Univ. of Delaware, Newark, DE (United States); Kummel, Andrew C. [Univ. of California, San Diego, CA (United States); Gordon, Roy G. [Harvard Univ., Cambridge, MA (United States)

    2016-12-15

    A key objective of this 3 year research effort was to reduce the open circuit voltage (Voc) deficit, defined as the difference between the absorber band gap and the measured Voc to below 475mV from values at the beginning of this work of 630-730mV. To achieve this reduction, along with the attendant goals of higher Voc and efficiency, detailed studies into the fundamental understanding of existing limitations were undertaken.

  18. Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

    Science.gov (United States)

    Hernández-Rosales, E.; Cedeño, E.; Hernandez-Wong, J.; Rojas-Trigos, J. B.; Marin, E.; Gandra, F. C. G.; Mansanares, A. M.

    2016-07-01

    In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

  19. Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

    Energy Technology Data Exchange (ETDEWEB)

    Hernández-Rosales, E.; Cedeño, E. [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil); Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Hernandez-Wong, J. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); CONACYT, México, DF, México (Mexico); Rojas-Trigos, J. B.; Marin, E. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Gandra, F. C. G.; Mansanares, A. M., E-mail: manoel@ifi.unicamp.br [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil)

    2016-07-25

    In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

  20. Controllable Threshold Voltage in Organic Complementary Logic Circuits with an Electron-Trapping Polymer and Photoactive Gate Dielectric Layer.

    Science.gov (United States)

    Dao, Toan Thanh; Sakai, Heisuke; Nguyen, Hai Thanh; Ohkubo, Kei; Fukuzumi, Shunichi; Murata, Hideyuki

    2016-07-20

    We present controllable and reliable complementary organic transistor circuits on a PET substrate using a photoactive dielectric layer of 6-[4'-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) doped into poly(methyl methacrylate) (PMMA) and an electron-trapping layer of poly(perfluoroalkenyl vinyl ether) (Cytop). Cu was used for a source/drain electrode in both the p-channel and n-channel transistors. The threshold voltage of the transistors and the inverting voltage of the circuits were reversibly controlled over a wide range under a program voltage of less than 10 V and under UV light irradiation. At a program voltage of -2 V, the inverting voltage of the circuits was tuned to be at nearly half of the supply voltage of the circuit. Consequently, an excellent balance between the high and low noise margins (NM) was produced (64% of NMH and 68% of NML), resulting in maximum noise immunity. Furthermore, the programmed circuits showed high stability, such as a retention time of over 10(5) s for the inverter switching voltage. Our findings bring about a flexible, simple way to obtain robust, high-performance organic circuits using a controllable complementary transistor inverter.

  1. Diagnosis of inverter switch open circuit faults based on neutral point voltage signal analysis

    Directory of Open Access Journals (Sweden)

    Liwei GUO

    Full Text Available Using the current signal to diagnose inverter faults information is apt to be affected by the load, noise and other factors; besides, it requires long diagnosis period with special algorithms and the diagnosis result is easily to be incorrect with no-load or light-load. Focusing on this issue, the logical analysis method is proposed for correlation logical analysis of leg neutral-point voltage and pulse signal to realize the diagnosis of the open circuit faults of inverter switches. The logical expressions of output signals of inverter power tube open-circuit faults is put forward and interrelated hardware circuit design is also elaborated. Delaying the rising edge of inverter power tube's pulse signal can effectively avoid the diagnosis error caused by the power tube's switching on/off. The experiment results show that the method can effectively diagnose the open-circuit faults of single-phase single power tube inverter in real-time and the hardware circuit cost is low, which shows it is effective and feasible.

  2. Flexible low-voltage organic integrated circuits with megahertz switching frequencies (Presentation Recording)

    Science.gov (United States)

    Zschieschang, Ute; Takimiya, Kazuo; Zaki, Tarek; Letzkus, Florian; Richter, Harald; Burghartz, Joachim N.; Klauk, Hagen

    2015-09-01

    A process for the fabrication of integrated circuits based on bottom-gate, top-contact organic thin-film transistors (TFTs) with channel lengths as short as 1 µm on flexible plastic substrates has been developed. In this process, all TFT layers (gate electrodes, organic semiconductors, source/drain contacts) are patterned with the help of high-resolution silicon stencil masks, thus eliminating the need for subtractive patterning and avoiding the exposure of the organic semiconductors to potentially harmful organic solvents or resists. The TFTs employ a low-temperature-processed gate dielectric that is sufficiently thin to allow the TFTs and circuits to operate with voltages of about 3 V. Using the vacuum-deposited small-molecule organic semiconductor 2,9-didecyl-dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10 DNTT), TFTs with an effective field-effect mobility of 1.2 cm2/Vs, an on/off current ratio of 107, a width-normalized transconductance of 1.2 S/m (with a standard deviation of 6%), and a signal propagation delay (measured in 11-stage ring oscillators) of 420 nsec per stage at a supply voltage of 3 V have been obtained. To our knowledge, this is the first time that megahertz operation has been achieved in flexible organic transistors at supply voltages of less than 10 V. In addition to flexible ring oscillators, we have also demonstrated a 6-bit digital-to-analog converter (DAC) in a binary-weighted current-steering architecture, based on TFTs with a channel length of 4 µm and fabricated on a glass substrate. This DAC has a supply voltage of 3.3 V, a circuit area of 2.6 × 4.6 mm2, and a maximum sampling rate of 100 kS/s.

  3. Automatic System for the D.C. High Voltage Qualification of the Superconducting Electrical Circuits of the LHC Machine

    CERN Document Server

    Bozzini, D; Russenschuck, Stephan; Bednarek, M; Jurkiewicz, P; Kotarba, A; Ludwin, J; Olek, S

    2008-01-01

    A d.c. high voltage test system has been developed to verify automatically the insulation resistance of the powering circuits of the LHC. In the most complex case, up to 72 circuits share the same volume inside cryogenic lines. Each circuit can have an insulation fault versus any other circuit or versus ground. The system is able to connect up to 80 circuits and apply a voltage up to 2 kV D.C. The leakage current flowing through each circuit is measured within a range of 1 nA to 1.6 mA. The matrix of measurements allows characterizing the paths taken by the currents and locating weak points of the insulation between circuits. The system is composed of a D.C. voltage source and a data acquisition card. The card is able to measure with precision currents and voltages and to drive up to 5 high voltage switching modules offering 16 channels each. A LabVIEW application controls the system for an automatic and safe operation. This paper describes the hardware and software design, the testing methodology and the res...

  4. An Adaptive Estimation Scheme for Open-Circuit Voltage of Power Lithium-Ion Battery

    Directory of Open Access Journals (Sweden)

    Yun Zhang

    2013-01-01

    Full Text Available Open-circuit voltage (OCV is one of the most important parameters in determining state of charge (SoC of power battery. The direct measurement of it is costly and time consuming. This paper describes an adaptive scheme that can be used to derive OCV of the power battery. The scheme only uses the measurable input (terminal current and the measurable output (terminal voltage signals of the battery system and is simple enough to enable online implement. Firstly an equivalent circuit model is employed to describe the polarization characteristic and the dynamic behavior of the lithium-ion battery; the state-space representation of the electrical performance for the battery is obtained based on the equivalent circuit model. Then the implementation procedure of the adaptive scheme is given; also the asymptotic convergence of the observer error and the boundedness of all the parameter estimates are proven. Finally, experiments are carried out, and the effectiveness of the adaptive estimation scheme is validated by the experimental results.

  5. A novel on-chip high to low voltage power conversion circuit

    Institute of Scientific and Technical Information of China (English)

    Wang Hui; Wang Songlin; Lai Xinquan; Ye Qiang; Mou Zaixin; Li Xianrui; Guo Baolong

    2009-01-01

    A novel power supply transform technique for high voltage IC based on the TSMC 0.6μm BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm2 area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/℃. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.

  6. Simultaneous improvement in short circuit current, open circuit voltage, and fill factor of polymer solar cells through ternary strategy.

    Science.gov (United States)

    An, Qiaoshi; Zhang, Fujun; Li, Lingliang; Wang, Jian; Sun, Qianqian; Zhang, Jian; Tang, Weihua; Deng, Zhenbo

    2015-02-18

    We present a smart strategy to simultaneously increase the short circuit current (Jsc), the open circuit voltage (Voc), and the fill factor (FF) of polymer solar cells (PSCs). A two-dimensional conjugated small molecule photovoltaic material (SMPV1), as the second electron donor, was doped into the blend system of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C71-butyric acid methyl (PC71BM) to form ternary PSCs. The ternary PSCs with 5 wt % SMPV1 doping ratio in donors achieve 4.06% champion power conversion efficiency (PCE), corresponding to about 21.2% enhancement compared with the 3.35% PCE of P3HT:PC71BM-based PSCs. The underlying mechanism on performance improvement of ternary PSCs can be summarized as (i) harvesting more photons in the longer wavelength region to increase Jsc; (ii) obtaining the lower mixed highest occupied molecular orbital (HOMO) energy level by incorporating SMPV1 to increase Voc; (iii) forming the better charge carrier transport channels through the cascade energy level structure and optimizing phase separation of donor/acceptor materials to increase Jsc and FF.

  7. High-Precision Multi-Wave Rectifier Circuit Operating in Low Voltage + 1.5 Volt Current Mode

    Directory of Open Access Journals (Sweden)

    Bancha Burapattanasiri

    2009-12-01

    Full Text Available This article is present high-precision multi-wave rectifier circuit operating in low voltage +/- 1.5 Volt current modes by CMOS technology 0.5 μm, receive input and give output in current mode, respond at high frequency period. The structure compound with high-speed current comparator circuit, current mirror circuit, and CMOS inverter circuit. PSpice program used for confirmation the performance of testing. The PSpice program shows operating of circuit is able to working at maximum input current 400 μAp-p, maximum frequency responding 200 MHz, high precision and low power losses, and non-precision zero crossing output signal.Keywords-component; rectifier circuit; high-precision; low voltage; current mode;

  8. Elucidating the interplay between dark current coupling and open circuit voltage in organic photovoltaics

    KAUST Repository

    Erwin, Patrick

    2011-01-01

    A short series of alkyl substituted perylenediimides (PDIs) with varying steric bulk are used to demonstrate the relationship between molecular structure, materials properties, and performance characteristics in organic photovoltaics. Devices were made with the structure indium tin oxide/copper phthalocyanine (200 Å)/PDI (200 Å)/bathocuproine (100 Å)/aluminum (1000 Å). We found that PDIs with larger substituents produced higher open circuit voltages (VOC\\'s) despite the donor acceptor interface gap (Δ EDA) remaining unchanged. Additionally, series resistance was increased simultaneously with VOC the effect of reducing short circuit current, making the addition of steric bulk a tradeoff that needs to be balanced to optimize power conversion efficiency. © 2011 American Institute of Physics.

  9. A SQUID gradiometer module with wire-wound pickup antenna and integrated voltage feedback circuit

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Guofeng [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Peter Gruenberg Institute (PGI-8), Forschungszentrum Juelich (FZJ), D-52425 Juelich (Germany); Joint Research Laboratory on Superconductivity and Bioelectronics, Collaboration between CAS-Shanghai and FZJ, Shanghai 200050 (China); Graduate University of the Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Yi, E-mail: y.zhang@fz-juelich.de [Peter Gruenberg Institute (PGI-8), Forschungszentrum Juelich (FZJ), D-52425 Juelich (Germany); Joint Research Laboratory on Superconductivity and Bioelectronics, Collaboration between CAS-Shanghai and FZJ, Shanghai 200050 (China); Zhang Shulin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Joint Research Laboratory on Superconductivity and Bioelectronics, Collaboration between CAS-Shanghai and FZJ, Shanghai 200050 (China); Krause, Hans-Joachim [Peter Gruenberg Institute (PGI-8), Forschungszentrum Juelich (FZJ), D-52425 Juelich (Germany); Joint Research Laboratory on Superconductivity and Bioelectronics, Collaboration between CAS-Shanghai and FZJ, Shanghai 200050 (China); and others

    2012-10-15

    The performance of the direct readout schemes for dc SQUID, Additional Positive Feedback (APF), noise cancellation (NC) and SQUID bootstrap circuit (SBC), have been studied in conjunction with planar SQUID magnetometers. In this paper, we examine the NC technique applied to a niobium SQUID gradiometer module with an Nb wire-wound antenna connecting to a dual-loop SQUID chip with an integrated voltage feedback circuit for suppression of the preamplifier noise contribution. The sensitivity of the SQUID gradiometer module is measured to be about 1 fT/(cm {radical}Hz) in the white noise range in a magnetically shielded room. Using such gradiometer, both MCG and MEG signals are recorded.

  10. High Voltage Resistive Divider Based on Cast Microwire in Glass Insulation on 6–24 kV Alternating Current of Commercial Frequency.

    Directory of Open Access Journals (Sweden)

    Juravleov A.

    2008-12-01

    Full Text Available It is presented the analysis and description of the construction of the high voltage resistive divider on the base of cast microwire in glass insulation on 6–24 kV alternating current of commercial frequency. It is presented the procedure of compensation of frequency error during the process of fabrication of divides and results of tests of the sample model of the divider as well.

  11. Ultra-Low-Voltage Self-Body Biasing Scheme and Its Application to Basic Arithmetic Circuits

    Directory of Open Access Journals (Sweden)

    Ramiro Taco

    2015-01-01

    Full Text Available The gate level body biasing (GLBB is assessed in the context of ultra-low-voltage logic designs. To this purpose, a GLBB mirror full adder is implemented by using a commercial 45 nm bulk CMOS triple-well technology and compared to equivalent conventional zero body-biased CMOS and dynamic threshold voltage MOSFET (DTMOS circuits under different running conditions. Postlayout simulations demonstrate that, at the parity of leakage power consumption, the GLBB technique exhibits a significant concurrent reduction of the energy per operation and the delay in comparison to the conventional CMOS and DTMOS approaches. The silicon area required by the GLBB full adder is halved with respect to the equivalent DTMOS implementation, but it is higher in comparison to conventional CMOS design. Performed analysis also proves that the GLBB solution exhibits a high level of robustness against temperature fluctuations and process variations.

  12. High Open-Circuit Voltage Solar Cells Based on Organic-Inorganic Lead Bromide Perovskite.

    Science.gov (United States)

    Edri, Eran; Kirmayer, Saar; Cahen, David; Hodes, Gary

    2013-03-21

    Mesoscopic solar cells, based on solution-processed organic-inorganic perovskite absorbers, are a promising avenue for converting solar to electrical energy. We used solution-processed organic-inorganic lead halide perovskite absorbers, in conjunction with organic hole conductors, to form high voltage solar cells. There is a dire need for low-cost cells of this type, to drive electrochemical reactions or as the high photon energy cell in a system with spectral splitting. These perovskite materials, although spin-coated from solution, form highly crystalline materials. Their simple synthesis, along with high chemical versatility, allows tuning their electronic and optical properties. By judicious selection of the perovskite lead halide-based absorber, matching organic hole conductor, and contacts, a cell with a ∼ 1.3 V open circuit voltage was made. While further study is needed, this achievement provides a general guideline for additional improvement of cell performance.

  13. Surge protective device response to steep front transient in low voltage circuit

    Energy Technology Data Exchange (ETDEWEB)

    Marcuz, J.; Binczak, S.; Bilbault, J.M. [Universite de Bourgogne, Dijon (France)], Emails: jerome.marcuz@ laposte.net, stbinc@u-bourgogne.fr, bilbault@u-bourgogne.fr; Girard, F. [ADEE Electronic, Pont de Pany (France)

    2007-07-01

    Surge propagation on cables of electrical or data lines leads to a major protection problem as the number of equipment based on solid-state circuits or microprocessors increases. Sub-microsecond components of real surge waveform has to be taken into account for a proper protection even in the case of surges caused by indirect lightning effects. The response of a model of transient voltage suppressor diode based surge protection device (SPD) to fast front transient is analytically studied, then compared to simulations, including the lines connected to the SPD and to the protected equipment. (author)

  14. Voltage Recovery of Grid-Connected Wind Turbines with DFIG After a Short-Circuit Fault

    DEFF Research Database (Denmark)

    Sun, Tao; Chen, Zhe; Blaabjerg, Frede

    2004-01-01

    recovery of variable speed wind turbines with doubly fed induction generators (DFIG). A simulation model of a MW-level variable speed wind turbine with a DFIG developed in PSCAD/EMTDC is presented, and the control and protection schemes are described. A new control strategy is proposed to re......-establish the wind turbine terminal voltage after the clearance of an external short-circuit fault, and the restore the normal operation of the variable speed wind turbine with DFIG, which has been demonstrated by simulation results....

  15. Optical fiber imaging for high speed plasma motion diagnostics: applied to low voltage circuit breakers.

    Science.gov (United States)

    McBride, J W; Balestrero, A; Ghezzi, L; Tribulato, G; Cross, K J

    2010-05-01

    An integrated portable measurement system is described for the study of high speed and high temperature unsteady plasma flows such as those found in the vicinity of high current switching arcs. An array of optical fibers allows the formation of low spatial resolution images, with a maximum capture rate of 1 x 10(6) images per second (1 MHz), with 8 bit intensity resolution. Novel software techniques are reported to allow imaging of the arc; and to measure arc trajectories. Results are presented on high current (2 kA) discharge events in a model test fixture and on the application to a commercial low voltage circuit breaker.

  16. Effect of recombination on the open-circuit voltage of a silicon solar cell

    Science.gov (United States)

    Von Roos, O.; Landsberg, P. T.

    1985-01-01

    A theoretical study of the influence of band-band Auger, band-trap Auger, and the ordinary Shockley-Read-Hall mechanism for carrier recombination on the open-circuit voltage VOC of a solar cell is presented. Under reasonable assumptions for the magnitude of rate constants and realistic values for trap densities, surface recombination velocities and band-gap narrowing, the maximum VOC for typical back surface field solar cells is found to lie in the range between 0.61 and 0.72 V independent of base width.

  17. Carbon nanotube-polybithiophene photovoltaic devices with high open-circuit voltage

    Energy Technology Data Exchange (ETDEWEB)

    Patyk, Rodolfo L.; Huemmelgen, Ivo A. [Departamento de Fisica, Universidade Federal do Parana, Caixa Postal 19044, 81531-990 Curitiba PR (Brazil); Lomba, Bruno S.; Nogueira, Ana Flavia [Laboratorio de Nanotechnologia e Energia Solar, Instituto de Quimica, Unicamp, C.P. 6154, 13084-971 Campinas, Sao Paulo (Brazil); Furtado, Clascidia A.; Santos, Adelina Pinheiro [Laboratorio de Quimica de Nanoestruturas, CDTN/CNEN, Belo Horizonte, MG (Brazil); Mello, Regina M.Q.; Micaroni, Liliana [Departamento de Quimica, Universidade Federal do Parana, Caixa Postal 19081, 81531-990 Curitiba PR (Brazil)

    2007-01-15

    We report the preparation of photovoltaic devices using modified single wall carbon nanotubes, SWNTs. Devices are produced stacking on top of fluorine-doped tin-oxide, an electrochemically deposited polybithiophene layer, a layer of SWNT blended with poly(3-octylthiophene) and an evaporated top metal contact, Ca/Al or Al. Ca/Al-top-electrode devices achieve open-circuit voltages of 1.81 V and average power conversion efficiency of 1.48% at irradiance of 15.5 W m{sup -2}, spectrally distributed following AM1.5. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Critical interfaces in organic solar cells and their influence on the open-circuit voltage.

    Science.gov (United States)

    Potscavage, William J; Sharma, Asha; Kippelen, Bernard

    2009-11-17

    Organic photovoltaics, which convert sunlight into electricity with thin films of organic semiconductors, have been the subject of active research over the past 20 years. The global energy challenge has greatly increased interest in this technology in recent years. Low-temperature processing of organic small molecules from the vapor phase or of polymers from solution can confer organic semiconductors with a critical advantage over inorganic photovoltaic materials since the high-temperature processing requirements of the latter limit the range of substrates on which they can be deposited. Unfortunately, despite significant advances, the power conversion efficiency of organic solar cells remains low, with maximum values in the range of 6%. A better understanding of the physical processes that determine the efficiency of organic photovoltaic cells is crucial to enhancing their competitiveness with other thin-film technologies. Maximum values for the photocurrent can be estimated from the light-harvesting capability of the individual molecules or polymers in the device. However, a better understanding of the materials-level processes, particularly those in layer-to-layer interfaces, that determine the open-circuit voltage (V(OC)) in organic solar cells is critical and remains the subject of active research. The conventional wisdom is to use organic semiconductors with smaller band gaps to harvest a larger portion of the solar spectrum. This method is not always an effective prescription for increasing efficiency: it ignores the fact that the value of V(OC) is generally decreased in devices employing materials with smaller band gaps, as is the case with inorganic semiconductors. In this Account, we discuss the influence of the different interfaces formed in organic multilayer photovoltaic devices on the value of V(OC); we use pentacene-C(60) solar cells as a model. In particular, we use top and bottom electrodes with different work function values, finding that V(OC) is

  19. Testing to Investigate Stress-LifetimeCharacteristics of High Voltage Printed Circuit Boards

    Science.gov (United States)

    El Korashy, Oliver; Franke, Andreas; Gollor, Matthias

    2014-08-01

    Printed circuit boards (PCBs) are typically used in all electronic equipment, including those conditioning or controlling high voltage (HV) for space satellite applications. With the use of new subsystems that require higher voltages (generally several hundred volts up to tens of kV), stress-lifetime issues are becoming more complex. In order to allow compact design and cost efficient production of HV modules, there is an increasing demand to improve the design of PCBs with encapsulation or conformal coating at higher voltages.Within a PCB there are a number of electrical field interfaces each of which can have individual stress- lifetime characteristics, and the influence of environmental aging should also be considered, which means a large number of sample types should be tested to gain experimental evidence to define the margin for each interface. This paper demonstrates a method to test multiple samples at a fixed DC voltage stress until the event of a breakdown, and presents test results from 6 single-sided encapsulated PCB samples.

  20. Robust and Energy-Efficient Ultra-Low-Voltage Circuit Design under Timing Constraints in 65/45 nm CMOS

    Directory of Open Access Journals (Sweden)

    David Bol

    2011-01-01

    Full Text Available Ultra-low-voltage operation improves energy efficiency of logic circuits by a factor of 10×, at the expense of speed, which is acceptable for applications with low-to-medium performance requirements such as RFID, biomedical devices and wireless sensors. However, in 65/45 nm CMOS, variability and short-channel effects significantly harm robustness and timing closure of ultra-low-voltage circuits by reducing noise margins and jeopardizing gate delays. The consequent guardband on the supply voltage to meet a reasonable manufacturing yield potentially ruins energy efficiency. Moreover, high leakage currents in these technologies degrade energy efficiency in case of long stand-by periods. In this paper, we review recently published techniques to design robust and energy-efficient ultra-low-voltage circuits in 65/45 nm CMOS under relaxed yet strict timing constraints.

  1. Controlled Conjugated Backbone Twisting for an Increased Open-Circuit Voltage while Having a High Short-Circuit Current in Poly(hexylthiophene) Derivatives

    KAUST Repository

    Ko, Sangwon

    2012-03-21

    Conjugated polymers with nearly planar backbones have been the most commonly investigated materials for organic-based electronic devices. More twisted polymer backbones have been shown to achieve larger open-circuit voltages in solar cells, though with decreased short-circuit current densities. We systematically impose twists within a family of poly(hexylthiophene)s and examine their influence on the performance of polymer:fullerene bulk heterojunction (BHJ) solar cells. A simple chemical modification concerning the number and placement of alkyl side chains along the conjugated backbone is used to control the degree of backbone twisting. Density functional theory calculations were carried out on a series of oligothiophene structures to provide insights on how the sterically induced twisting influences the geometric, electronic, and optical properties. Grazing incidence X-ray scattering measurements were performed to investigate how the thin-film packing structure was affected. The open-circuit voltage and charge-transfer state energy of the polymer:fullerene BHJ solar cells increased substantially with the degree of twist induced within the conjugated backbone-due to an increase in the polymer ionization potential-while the short-circuit current decreased as a result of a larger optical gap and lower hole mobility. A controlled, moderate degree of twist along the poly(3,4-dihexyl-2,2′:5′,2′′- terthiophene) (PDHTT) conjugated backbone led to a 19% enhancement in the open-circuit voltage (0.735 V) vs poly(3-hexylthiophene)-based devices, while similar short-circuit current densities, fill factors, and hole-carrier mobilities were maintained. These factors resulted in a power conversion efficiency of 4.2% for a PDHTT:[6,6]-phenyl-C 71-butyric acid methyl ester (PC 71BM) blend solar cell without thermal annealing. This simple approach reveals a molecular design avenue to increase open-circuit voltage while retaining the short-circuit current. © 2012 American

  2. Reduced voltage losses yield 10% efficient fullerene free organic solar cells with >1 V open circuit voltages

    KAUST Repository

    Baran, D.

    2016-11-09

    Optimization of the energy levels at the donor-acceptor interface of organic solar cells has driven their efficiencies to above 10%. However, further improvements towards efficiencies comparable with inorganic solar cells remain challenging because of high recombination losses, which empirically limit the open-circuit voltage (Voc) to typically less than 1 V. Here we show that this empirical limit can be overcome using non-fullerene acceptors blended with the low band gap polymer PffBT4T-2DT leading to efficiencies approaching 10% (9.95%). We achieve Voc up to 1.12 V, which corresponds to a loss of only Eg/q - Voc = 0.5 ± 0.01 V between the optical bandgap Eg of the polymer and Voc. This high Voc is shown to be associated with the achievement of remarkably low non-geminate and non-radiative recombination losses in these devices. Suppression of non-radiative recombination implies high external electroluminescence quantum efficiencies which are orders of magnitude higher than those of equivalent devices employing fullerene acceptors. Using the balance between reduced recombination losses and good photocurrent generation efficiencies achieved experimentally as a baseline for simulations of the efficiency potential of organic solar cells, we estimate that efficiencies of up to 20% are achievable if band gaps and fill factors are further optimized. © The Royal Society of Chemistry 2016.

  3. Reduced voltage losses yield 10% efficient fullerene free organic solar cells with >1 V open circuit voltages.

    Science.gov (United States)

    Baran, D; Kirchartz, T; Wheeler, S; Dimitrov, S; Abdelsamie, M; Gorman, J; Ashraf, R S; Holliday, S; Wadsworth, A; Gasparini, N; Kaienburg, P; Yan, H; Amassian, A; Brabec, C J; Durrant, J R; McCulloch, I

    2016-12-01

    Optimization of the energy levels at the donor-acceptor interface of organic solar cells has driven their efficiencies to above 10%. However, further improvements towards efficiencies comparable with inorganic solar cells remain challenging because of high recombination losses, which empirically limit the open-circuit voltage (Voc) to typically less than 1 V. Here we show that this empirical limit can be overcome using non-fullerene acceptors blended with the low band gap polymer PffBT4T-2DT leading to efficiencies approaching 10% (9.95%). We achieve Voc up to 1.12 V, which corresponds to a loss of only Eg/q - Voc = 0.5 ± 0.01 V between the optical bandgap Eg of the polymer and Voc. This high Voc is shown to be associated with the achievement of remarkably low non-geminate and non-radiative recombination losses in these devices. Suppression of non-radiative recombination implies high external electroluminescence quantum efficiencies which are orders of magnitude higher than those of equivalent devices employing fullerene acceptors. Using the balance between reduced recombination losses and good photocurrent generation efficiencies achieved experimentally as a baseline for simulations of the efficiency potential of organic solar cells, we estimate that efficiencies of up to 20% are achievable if band gaps and fill factors are further optimized.

  4. Enhanced Open-Circuit Voltage of PbS Nanocrystal Quantum Dot Solar Cells

    Science.gov (United States)

    Yoon, Woojun; Boercker, Janice E.; Lumb, Matthew P.; Placencia, Diogenes; Foos, Edward E.; Tischler, Joseph G.

    2013-07-01

    Nanocrystal quantum dots (QD) show great promise toward improving solar cell efficiencies through the use of quantum confinement to tune absorbance across the solar spectrum and enable multi-exciton generation. Despite this remarkable potential for high photocurrent generation, the achievable open-circuit voltage (Voc) is fundamentally limited due to non-radiative recombination processes in QD solar cells. Here we report the highest open-circuit voltages to date for colloidal QD based solar cells under one sun illumination. This Voc of 692 +/- 7 mV for 1.4 eV PbS QDs is a result of improved passivation of the defective QD surface, demonstrating as a function of the QD bandgap (Eg). Comparing experimental Voc variation with the theoretical upper-limit obtained from one diode modeling of the cells with different Eg, these results clearly demonstrate that there is a tremendous opportunity for improvement of Voc to values greater than 1 V by using smaller QDs in QD solar cells.

  5. Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications

    Science.gov (United States)

    Zhuge, Jing; Verhulst, Anne S.; Vandenberghe, William G.; Dehaene, Wim; Huang, Ru; Wang, Yangyuan; Groeseneken, Guido

    2011-08-01

    This paper investigates the potential of tunnel field-effect transistors (TFETs), with emphasis on short-gate TFETs, by simulation for low-power digital applications having a supply voltage lower than 0.5 V. A transient study shows that the tunneling current has a negligible contribution in charging and discharging the gate capacitance of TFETs. In spite of a higher resistance region in the short-gate TFET, the gate (dis)charging speed still meets low-voltage application requirements. A circuit analysis is performed on short-gate TFETs with different materials, such as Si, Ge and heterostructures in terms of voltage overshoot, delay, static power, energy consumption and energy delay product (EDP). These results are compared to MOSFET and full-gate TFET performance. It is concluded that short-gate heterostructure TFETs (Ge-source for nTFET, In0.6Ga0.4As-source for pTFET) are promising candidates to extend the supply voltage to lower than 0.5 V because they combine the advantage of a low Miller capacitance, due to the short-gate structures, and strong drive current in TFETs, due to the narrow bandgap material in the source. At a supply voltage of 0.4 V and for an EOT and channel length of 0.6 nm and 40 nm, respectively, a three-stage inverter chain based on short-gate heterostructure TFETs saves 40% energy consumption per cycle at the same delay and shows 60%-75% improvement of EDP at the same static power, compared to its full-gate counterpart. When compared to the MOSFET, better EDP can be achieved in the heterostructure TFET especially at low static power consumption.

  6. Voltage-Controlled Floating Resistor Using DDCC

    Directory of Open Access Journals (Sweden)

    M. Kumngern

    2011-04-01

    Full Text Available This paper presents a new simple configuration to realize the voltage-controlled floating resistor, which is suitable for integrated circuit implementation. The proposed resistor is composed of three main components: MOS transistor operating in the non-saturation region, DDCC, and MOS voltage divider. The MOS transistor operating in the non-saturation region is used to configure a floating linear resistor. The DDCC and the MOS transistor voltage divider are used for canceling the nonlinear component term of MOS transistor in the non-saturation region to obtain a linear current/voltage relationship. The DDCC is employed to provide a simple summer of the circuit. This circuit offers an ease for realizing the voltage divider circuit and the temperature effect that includes in term of threshold voltage can be compensated. The proposed configuration employs only 16 MOS transistors. The performances of the proposed circuit are simulated with PSPICE to confirm the presented theory.

  7. Numerical modeling of high-voltage circuit breaker arcs and their interraction with the power system

    Science.gov (United States)

    Orama, Lionel R.

    In this work the interaction between series connected gas and vacuum circuit breaker arcs has been studied. The breakdown phenomena in vacuum interrupters during the post arc current period have been of special interest. Numerical models of gas and vacuum arcs were developed in the form of black box models. Especially, the vacuum post arc model was implemented by combining the existing transition model with an ion density function and expressions for the breakdown mechanisms. The test series studied reflect that for electric fields on the order of 10sp7V/m over the anode, the breakdown of the vacuum gap can result from a combination of both thermal and electrical stresses. For a particular vacuum device, the vacuum model helps to find the interruption limits of the electric field and power density over the anode. The series connection of gas and vacuum interrupters always performs better than the single gas device. Moreover, to take advantage of the good characteristics of both devices, the time between the current zero crossing in each interrupter can be changed. This current zero synchronization is controlled by changing the capacitance in parallel to the gas device. This gas/vacuum interrupter is suitable for interruption of very stressful short circuits in which the product of the dI/dt before current zero and the dV/dt after current zero is very high. Also, a single SF6 interrupter can be replaced by an air circuit breaker of the same voltage rating in series with a vacuum device without compromising the good performance of the SF6 device. Conceptually, a series connected vacuum device can be used for high voltage applications with equal distribution of electrical stresses between the individual interrupters. The equalization can be made by a sequential opening of the individual contact pairs, beginning with the interruptors that are closer to ground potential. This could eliminate the use of grading capacitors.

  8. Simple voltage-controlled current source for wideband electrical bioimpedance spectroscopy: circuit dependences and limitations

    Science.gov (United States)

    Seoane, F.; Macías, R.; Bragós, R.; Lindecrantz, K.

    2011-11-01

    In this work, the single Op-Amp with load-in-the-loop topology as a current source is revisited. This circuit topology was already used as a voltage-controlled current source (VCCS) in the 1960s but was left unused when the requirements for higher frequency arose among the applications of electrical bioimpedance (EBI). The aim of the authors is not only limited to show that with the currently available electronic devices it is perfectly viable to use this simple VCCS topology as a working current source for wideband spectroscopy applications of EBI, but also to identify the limitations and the role of each of the circuit components in the most important parameter of a current for wideband applications: the output impedance. The study includes the eventual presence of a stray capacitance and also an original enhancement, driving with current the VCCS. Based on the theoretical analysis and experimental measurements, an accurate model of the output impedance is provided, explaining the role of the main constitutive elements of the circuit in the source's output impedance. Using the topologies presented in this work and the proposed model, any electronic designer can easily implement a simple and efficient current source for wideband EBI spectroscopy applications, e.g. in this study, values above 150 kΩ at 1 MHz have been obtained, which to the knowledge of the authors are the largest values experimentally measured and reported for a current source in EBI at this frequency.

  9. Modeling and Simulation of Flexible Transmission Mechanism with Multiclearance Joints for Ultrahigh Voltage Circuit Breakers

    Directory of Open Access Journals (Sweden)

    Fangang Meng

    2015-01-01

    Full Text Available The transmission mechanism, of which the dynamic characteristics determine the reliability of the circuit breaker, is the principal component of the ultrahigh voltage (UHV circuit breaker. The characteristics of transmission mechanism are quick motion, high sensibility, and high reliability. The transmission mechanism with multiclearance joints present strong no-linear vibration feature which strongly affects the reliability of the UHV circuit breaker. In this investigation, a planar rigid-flexible coupling model of the transmission mechanism considering the clearance joints and the flexibility of components is established by using ADAMS software. The dynamic contact model in clearance joints is performed, based on clearance vector model of clearance joint. Then, the reliability of the model is proved by means of comparing the results of experiments. The simulation results show that the dynamic response of the mechanism is greatly influenced by the clearance and the flexibility of components has a role of suspension for the mechanism. Moreover, the influence of the clearance size, input speed, and number of clearance joints on the dynamic characteristics of the mechanism are also investigated.

  10. Factors limiting the open-circuit voltage in microcrystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    Chatterjee P.

    2011-11-01

    Full Text Available In studying photovoltaic devices made with silicon thin films and considering them according to their grain size, it is curious that as the crystalline fraction increases, the open-circuit voltage (Voc – rather than approaching that of the single-crystal case – shows a decline. To gain an insight into this behavior, observed in hydrogenated microcrystalline silicon (μc-Si:H solar cells prepared under a variety of deposition conditions, we have used a detailed electrical-optical computer modeling program, ASDMP. Two typical μc-Si:H cells with low (~79% and higher (~93% crystalline volume fractions (Fc, deposited in our laboratory and showing this general trend, were modeled. From the parameters extracted by simulation of their experimental current density – voltage and quantum efficiency characteristics, it was inferred that the higher Fc cell has both a higher band gap defect density as well as a lower band gap energy. Our calculations reveal that the proximity of the quasi-Fermi levels to the energy bands in cells based on highly crystallized μc-Si:H (assumed to have a lower band gap, results in both higher free and trapped carrier densities. The trapped hole population, that is particularly high near the P/I interface, results in a strong interface field, a collapse of the field in the volume, and hence a lower open-circuit voltage. Interestingly enough, we were able to fabricate fluorinated μc-Si:H:F cells having 100% crystalline fraction as well as very large grains, that violate the general trend and show a higher Voc. Modeling indicates that this is possible for the latter case, as also for a crystalline silicon PN cell, in spite of a sharply reduced band gap, because the lower effective density of states at the band edges and a sharply reduced gap defect density overcome the effect of the lower band gap.

  11. Development of High-Voltage Vacuum Circuit Breaker%高电压真空断路器的发展

    Institute of Scientific and Technical Information of China (English)

    吴红亚; 李建基

    2011-01-01

    六氟化硫断路器在高压断路器中居主导地位,而真空断路器在中压领域占绝对优势,并在高电压领域崭露头角。阐述了开发高电压真空断路器的必要性,介绍了现有产品的结构与特点,并提出了研发高电压真空断路器需解决的技术问题及相关的应对措施。%Sulfur hexafluoride circuit breakers take a leading position in high-voltage circuit breakers and vacuum circuit breakers hold all the trumps in medium voltage field,making a figure in high-voltage field.Description was made to the necessity of development of high-voltage vacuum circuit breakers.Introduction was made to structure and features of the existing products.This paper raised technical issues to be solved in RD of high-voltage vacuum circuit breakers and their related countermeasures.

  12. Real-Time Nanoscale Open-Circuit Voltage Dynamics of Perovskite Solar Cells.

    Science.gov (United States)

    Garrett, Joseph L; Tennyson, Elizabeth M; Hu, Miao; Huang, Jinsong; Munday, Jeremy N; Leite, Marina S

    2017-04-12

    Hybrid organic-inorganic perovskites based on methylammonium lead (MAPbI3) are an emerging material with great potential for high-performance and low-cost photovoltaics. However, for perovskites to become a competitive and reliable solar cell technology their instability and spatial variation must be understood and controlled. While the macroscopic characterization of the devices as a function of time is very informative, a nanoscale identification of their real-time local optoelectronic response is still missing. Here, we implement a four-dimensional imaging method through illuminated heterodyne Kelvin probe force microscopy to spatially (perovskite solar cells in a low relative humidity environment. Local open-circuit voltage (Voc) images show nanoscale sites with voltage variation >300 mV under 1-sun illumination. Surprisingly, regions of voltage that relax in seconds and after several minutes consistently coexist. Time-dependent changes of the local Voc are likely due to intragrain ion migration and are reversible at low injection level. These results show for the first time the real-time transient behavior of the Voc in perovskite solar cells at the nanoscale. Understanding and controlling the light-induced electrical changes that affect device performance are critical to the further development of stable perovskite-based solar technologies.

  13. Preparation of Power Distribution System for High Penetration of Renewable Energy Part I. Dynamic Voltage Restorer for Voltage Regulation Pat II. Distribution Circuit Modeling and Validation

    Science.gov (United States)

    Khoshkbar Sadigh, Arash

    Part I: Dynamic Voltage Restorer In the present power grids, voltage sags are recognized as a serious threat and a frequently occurring power-quality problem and have costly consequence such as sensitive loads tripping and production loss. Consequently, the demand for high power quality and voltage stability becomes a pressing issue. Dynamic voltage restorer (DVR), as a custom power device, is more effective and direct solutions for "restoring" the quality of voltage at its load-side terminals when the quality of voltage at its source-side terminals is disturbed. In the first part of this thesis, a DVR configuration with no need of bulky dc link capacitor or energy storage is proposed. This fact causes to reduce the size of the DVR and increase the reliability of the circuit. In addition, the proposed DVR topology is based on high-frequency isolation transformer resulting in the size reduction of transformer. The proposed DVR circuit, which is suitable for both low- and medium-voltage applications, is based on dc-ac converters connected in series to split the main dc link between the inputs of dc-ac converters. This feature makes it possible to use modular dc-ac converters and utilize low-voltage components in these converters whenever it is required to use DVR in medium-voltage application. The proposed configuration is tested under different conditions of load power factor and grid voltage harmonic. It has been shown that proposed DVR can compensate the voltage sag effectively and protect the sensitive loads. Following the proposition of the DVR topology, a fundamental voltage amplitude detection method which is applicable in both single/three-phase systems for DVR applications is proposed. The advantages of proposed method include application in distorted power grid with no need of any low-pass filter, precise and reliable detection, simple computation and implementation without using a phased locked loop and lookup table. The proposed method has been verified

  14. Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

    Institute of Scientific and Technical Information of China (English)

    Ni Jian; Zhang Jian-Jun; Cao Yu; Wang Xian-Bao; Li Chao; Chen Xin-Liang; Geng Xin-Hua; Zhao Ying

    2011-01-01

    This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125 ℃.We find that poor quality p-a-SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely.A significant improvement in open circuit voltage has been obtained by using high quality p-a-SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions.

  15. Resistor divider for high voltage pulse measurement in vacuum%一种在真空中测量脉冲高电压的电阻分压器

    Institute of Scientific and Technical Information of China (English)

    卫兵; 关永超; 卿燕玲; 陈林; 周良骥; 李晔; 丰树平

    2012-01-01

    A resistor divider has been designed for voltage measurement of diode load for 1 MV/100 kA fast linear transformer driver(LTD). The divider is designed with two stages. The primary stage is a column of alternating annular metal grading rings and tapered insulators enclosing a resistive solution of sodium thiosulfate. A middle electrode is connected to the secondary voltage dividing stage. There is a 4 kΩ resistor in series with the 50 Ω input impedance of the attenuator or oscilloscope. The e-quivalent circuit of the divider which includes distributed capacitance and inductance has been calculated. It indicates that the high frequency limit of the divider is about 200 MHz. The divider has been calibrated in-situ using a P6015A probe and a high voltage pulser. The calibration ratio is 5 400 : 1. The voltage of diode load reaches 1. 08 MV when the charging voltage of LTD stage is ±85 kV respectively, according with the simulation of LTD.%为测量快脉冲直线变压器驱动源(LTD)二极管负载的脉冲高电压,设计了在真空环境中使用的电阻分压器.分压器使用绝缘堆结构,采用静电场模拟分析了分压器的电场分布.建立了包含分布参数的等效电路,并进行了频率响应仿真,可得分压器的频响上限为200 MHz.使用标准高压探头对分压器进行在线标定,分压比标定结果为5 400∶1,与设计值相符合.在LTD调试实验中,模块充电85 kV时二极管电压为1.08 MV,与理论估算结果一致.

  16. Surface-charge accumulation effects on open-circuit voltage in organic solar cells based on photoinduced impedance analysis.

    Science.gov (United States)

    Zang, Huidong; Hsiao, Yu-Che; Hu, Bin

    2014-03-14

    The accumulation of dissociated charge carriers plays an important role in reducing the loss occurring in organic solar cells. We find from light-assisted capacitance measurements that the charge accumulation inevitably occurred at the electrode and photovoltaic layer interface for bulk-heterojunction ITO/PEDOT:PSS/P3HT:PCBM/Ca/Al solar cells. Our results indicate, for the first time through impedance measurements, that the charge accumulation exists at the anode side of the device, and more importantly, we successfully identify the type of charge accumulated. Further study shows that the charge accumulation can significantly affect open circuit voltage and short circuit current. As a result, our experimental results from light assisted capacitance measurements provide a new understanding of the loss in open-circuit voltage and short-circuit photocurrent based on charge accumulation. Clearly, controlling charge accumulation presents a new mechanism to improve the photovoltaic performance of organic solar cells.

  17. Discussion on Selectivity of Low Voltage Circuit Breakers%低压断路器的选择性探讨

    Institute of Scientific and Technical Information of China (English)

    何国标

    2014-01-01

    This paper introduces the principle of selectivity for low voltage circuit breakers in distribution line. Focus on the coordinate of several circuit breakers and selectivity of overload and short circuit. This paper describes the latest selectivity technology of low voltage circuit breakers at home and abroad.%本文介绍了在配电线路中对不同低压断路器进行选择的原则。着重阐述了几种断路器之间的配合,过载情况、短路情况下的选择性。并阐述了国内外现阶段最新的低压断路器的选择性技术。

  18. Analogue Divider by Averaging a Triangular Wave

    Science.gov (United States)

    Selvam, Krishnagiri Chinnathambi

    2017-08-01

    A new analogue divider circuit by averaging a triangular wave using operational amplifiers is explained in this paper. The triangle wave averaging analog divider using operational amplifiers is explained here. The reference triangular waveform is shifted from zero voltage level up towards positive power supply voltage level. Its positive portion is obtained by a positive rectifier and its average value is obtained by a low pass filter. The same triangular waveform is shifted from zero voltage level to down towards negative power supply voltage level. Its negative portion is obtained by a negative rectifier and its average value is obtained by another low pass filter. Both the averaged voltages are combined in a summing amplifier and the summed voltage is given to an op-amp as negative input. This op-amp is configured to work in a negative closed environment. The op-amp output is the divider output.

  19. The correlation of open-circuit voltage with bandgap in amorphous silicon-based pin solar cells

    Science.gov (United States)

    Crandall, R. S.; Schiff, E. A.

    1996-01-01

    We briefly review the correlation of open-circuit voltages VOC with the bandgap of the intrinsic layer in amorphous silicon based pin solar cells. We discuss two mechanisms which limit VOC: intrinsic layer recombination, and the built-in potential VBI. In particular we discuss Li's proposal that the open-circuit voltages in higher bandgap cells (EG>1.9 eV) are VBI-limited. Based on computer simulations of pin solar cells we propose that VBI limitation occurs when the recombination limit to VOC exceeds the cell's field-reversal voltage VR. For a-Si:H based cells this field-reversal voltage occurs at about VBI-0.3 V. This proposal would account for the observation that VBI limitation occurs for VOC significantly smaller than VBI.

  20. Voltage sags due to the short-circuits on transmission lines; Afundamentos de tensao provocados por curto-circuitos em linhas de transmissao

    Energy Technology Data Exchange (ETDEWEB)

    Klock Junior, Odemar Solano [Companhia Paranaense de Energia (COPEL), Curitiba, PR (Brazil)

    2001-07-01

    This paper analyses the voltage sags influence on the buses, including the ones where consumers of the COPEL transmission electric system, determining the sags number and the approximate values for short-circuits on transmission lines. The voltage values, during the the short-circuit regime are obtained from the data for the short-circuit program. The short-circuits are simulated by the assembly of the electric system impedance matrix, from where the voltage values for short-circuits on any point of the electric system can be determined using simply calculations.

  1. Correlation between the Open-Circuit Voltage and Charge Transfer State Energy in Organic Photovoltaic Cells.

    Science.gov (United States)

    Zou, Yunlong; Holmes, Russell J

    2015-08-26

    In order to further improve the performance of organic photovoltaic cells (OPVs), it is essential to better understand the factors that limit the open-circuit voltage (VOC). Previous work has sought to correlate the value of VOC in donor-acceptor (D-A) OPVs to the interface energy level offset (EDA). In this work, measurements of electroluminescence are used to extract the charge transfer (CT) state energy for multiple small molecule D-A pairings. The CT state as measured from electroluminescence is found to show better correlation to the maximum VOC than EDA. The difference between EDA and the CT state energy is attributed to the Coulombic binding energy of the CT state. This correlation is demonstrated explicitly by inserting an insulating spacer layer between the donor and acceptor materials, reducing the binding energy of the CT state and increasing the measured VOC. These results demonstrate a direct correlation between maximum VOC and CT state energy.

  2. CMOS circuits for electromagnetic vibration transducers interfaces for ultra-low voltage energy harvesting

    CERN Document Server

    Maurath, Dominic

    2015-01-01

    Chip-integrated power management solutions are a must for ultra-low power systems. This enables not only the optimization of innovative sensor applications. It is also essential for integration and miniaturization of energy harvesting supply strategies of portable and autonomous monitoring systems. The book particularly addresses interfaces for energy harvesting, which are the key element to connect micro transducers to energy storage elements. Main features of the book are: - A comprehensive technology and application review, basics on transducer mechanics, fundamental circuit and control design, prototyping and testing, up to sensor system supply and applications. - Novel interfacing concepts - including active rectifiers, MPPT methods for efficient tracking of DC as well as AC sources, and a fully-integrated charge pump for efficient maximum AC power tracking at sub-100µW ultra-low power levels. The chips achieve one of widest presented operational voltage range in standard CMOS technology: 0.44V to over...

  3. The use of radial integrated circuits for the design of voltage-controlled oscillators

    Science.gov (United States)

    de Jaeger, M.

    A theoretical model for the behavior of voltage-controlled oscillators (VCO) used in millimeter-wave applications is presented, with attention concentrated on multi-diode structures. A radial structure is considered, featuring the VCOs operating in the Q band with ICs. The model developed examines the electromagnetic behavior of the circuit, taking into account multimodal functioning. Experimental results are presented for the frequency evolution with impedance. The design of a VCO, through integration of a Gunn diode and a varactor into a radial system, is described, including an analysis of the series resistance of the varactor. Optimum operational conditions are defined, as are device dimensions. Finally, the technique is extended to the design of power combiners.

  4. Origin of Open-Circuit Voltage Loss in Polymer Solar Cells and Perovskite Solar Cells.

    Science.gov (United States)

    Kim, Hyung Do; Yanagawa, Nayu; Shimazaki, Ai; Endo, Masaru; Wakamiya, Atsushi; Ohkita, Hideo; Benten, Hiroaki; Ito, Shinzaburo

    2017-06-14

    Herein, the open-circuit voltage (VOC) loss in both polymer solar cells and perovskite solar cells is quantitatively analyzed by measuring the temperature dependence of VOC to discuss the difference in the primary loss mechanism of VOC between them. As a result, the photon energy loss for polymer solar cells is in the range of about 0.7-1.4 eV, which is ascribed to temperature-independent and -dependent loss mechanisms, while that for perovskite solar cells is as small as about 0.5 eV, which is ascribed to a temperature-dependent loss mechanism. This difference is attributed to the different charge generation and recombination mechanisms between the two devices. The potential strategies for the improvement of VOC in both solar cells are further discussed on the basis of the experimental data.

  5. The Cu2ZnSnS4 solar cell with high open circuit voltage

    Science.gov (United States)

    Yang, Min; Ma, Xun; Jiang, Zhi; Li, Zhishan; Liu, Sijia; Lu, Yilei; Wang, Shurong

    2017-03-01

    In this paper, the effects of two different sulfurization processes on the CZTS films were investigated, and the results indicated that a rapid high-temperature crystallization process after sulfurization was beneficial for CZTS thin films to obtain a compact and flat surface with large grains. However, a common sulfurization without rapid high-temperature crystallization process would easily lead to undesirable properties of films, such as rough surface with pin holes, which degenerate the performance of devices. Cu2ZnSnS4 (CZTS) solar cell based on a rapid high-temperature process after sulfurization achieved a high open circuit voltage of 722 mV and the best efficiency 3.32% was obtained.

  6. A Survey of Non-conventional Techniques for Low-voltage Low-power Analog Circuit Design

    Directory of Open Access Journals (Sweden)

    F. Khateb

    2013-06-01

    Full Text Available Designing integrated circuits able to work under low-voltage (LV low-power (LP condition is currently undergoing a very considerable boom. Reducing voltage supply and power consumption of integrated circuits is crucial factor since in general it ensures the device reliability, prevents overheating of the circuits and in particular prolongs the operation period for battery powered devices. Recently, non-conventional techniques i.e. bulk-driven (BD, floating-gate (FG and quasi-floating-gate (QFG techniques have been proposed as powerful ways to reduce the design complexity and push the voltage supply towards threshold voltage of the MOS transistors (MOST. Therefore, this paper presents the operation principle, the advantages and disadvantages of each of these techniques, enabling circuit designers to choose the proper design technique based on application requirements. As an example of application three operational transconductance amplifiers (OTA base on these non-conventional techniques are presented, the voltage supply is only ±0.4 V and the power consumption is 23.5 µW. PSpice simulation results using the 0.18 µm CMOS technology from TSMC are included to verify the design functionality and correspondence with theory.

  7. Study on Factors for Accurate Open Circuit Voltage Characterizations in Mn-Type Li-Ion Batteries

    OpenAIRE

    Natthawuth Somakettarin; Tsuyoshi Funaki

    2017-01-01

    Open circuit voltage (OCV) of lithium batteries has been of interest since the battery management system (BMS) requires an accurate knowledge of the voltage characteristics of any Li-ion batteries. This article presents an OCV characteristic for lithium manganese oxide (LMO) batteries under several experimental operating conditions, and discusses factors for accurate OCV determination. A test system is developed for OCV characterization based on the OCV pulse test method. Various factors for ...

  8. Study on the Mathematical Model of Dielectric Recovery Characteristics in High Voltage SF6 Circuit Breaker

    Science.gov (United States)

    Lin, Xin; Wang, Feiming; Xu, Jianyuan; Xia, Yalong; Liu, Weidong

    2016-03-01

    According to the stream theory, this paper proposes a mathematical model of the dielectric recovery characteristic based on the two-temperature ionization equilibrium equation. Taking the dynamic variation of charged particle's ionization and attachment into account, this model can be used in collaboration with the Coulomb collision model, which gives the relationship of the heavy particle temperature and electron temperature to calculate the electron density and temperature under different pressure and electric field conditions, so as to deliver the breakdown electric field strength under different pressure conditions. Meanwhile an experiment loop of the circuit breaker has been built to measure the breakdown voltage. It is shown that calculated results are in conformity with experiment results on the whole while results based on the stream criterion are larger than experiment results. This indicates that the mathematical model proposed here is more accurate for calculating the dielectric recovery characteristic, it is derived from the stream model with some improvement and refinement and has great significance for increasing the simulation accuracy of circuit breaker's interruption characteristic. supported by Science and Technology Project of State Grid Corporation of China (No. GY17201200063), National Natural Science Foundation of China (No. 51277123), Basic Research Project of Liaoning Key Laboratory of Education Department (LZ2015055)

  9. Fuzzy diagnostic system for oleo-pneumatic drive mechanism of high-voltage circuit breakers.

    Science.gov (United States)

    Nicolau, Viorel

    2013-01-01

    Many oil-based high-voltage circuit breakers are still in use in national power networks of developing countries, like those in Eastern Europe. Changing these breakers with new more reliable ones is not an easy task, due to their implementing costs. The acting device, called oleo-pneumatic mechanism (MOP), presents the highest fault rate from all components of circuit breaker. Therefore, online predictive diagnosis and early detection of the MOP fault tendencies are very important for their good functioning state. In this paper, fuzzy logic approach is used for the diagnosis of MOP-type drive mechanisms. Expert rules are generated to estimate the MOP functioning state, and a fuzzy system is proposed for predictive diagnosis. The fuzzy inputs give information about the number of starts and time of functioning per hour, in terms of short-term components, and their mean values. Several fuzzy systems were generated, using different sets of membership functions and rule bases, and their output performances are studied. Simulation results are presented based on an input data set, which contains hourly records of operating points for a time horizon of five years. The fuzzy systems work well, making an early detection of the MOP fault tendencies.

  10. Fuzzy Diagnostic System for Oleo-Pneumatic Drive Mechanism of High-Voltage Circuit Breakers

    Directory of Open Access Journals (Sweden)

    Viorel Nicolau

    2013-01-01

    Full Text Available Many oil-based high-voltage circuit breakers are still in use in national power networks of developing countries, like those in Eastern Europe. Changing these breakers with new more reliable ones is not an easy task, due to their implementing costs. The acting device, called oleo-pneumatic mechanism (MOP, presents the highest fault rate from all components of circuit breaker. Therefore, online predictive diagnosis and early detection of the MOP fault tendencies are very important for their good functioning state. In this paper, fuzzy logic approach is used for the diagnosis of MOP-type drive mechanisms. Expert rules are generated to estimate the MOP functioning state, and a fuzzy system is proposed for predictive diagnosis. The fuzzy inputs give information about the number of starts and time of functioning per hour, in terms of short-term components, and their mean values. Several fuzzy systems were generated, using different sets of membership functions and rule bases, and their output performances are studied. Simulation results are presented based on an input data set, which contains hourly records of operating points for a time horizon of five years. The fuzzy systems work well, making an early detection of the MOP fault tendencies.

  11. Influence of Copper Vapor on Low-Voltage Circuit Breaker Arcs During Stationary and Moving States

    Institute of Scientific and Technical Information of China (English)

    MA Qiang; RONG Mingzhe; WU Yi; XU Tiejun; SUN Zhiqiang

    2008-01-01

    The influence of copper vapor on the low-voltage circuit breaker arcs is studied. A three-dimensional (3-D) magnetohydrodynamics(MHD) model of arc motion under the effect of external magnetic field is built up. By adopting the commercial computational fluid dynamics (CFD) package FLUENT based on control-volume method, the above MHD model is solved. For the mediums of air-1% Cu and air-10% Cu, the distributions of stationary temperature, pressure, electrical potential and the arc motion processes are compared with those of a pure air arc. The copper vapor diffusion process in the arc chamber and the distribution of copper vapor mass concentration are also simulated. The results shows that the copper vapor has a cooling effect on the arc plasma and can decrease the stationary voltage as well. Moreover, the presence of copper vapor can decelerate the arc motion in the quenching chambers. The maximal copper vapor concentration locates behind the arc root because of the existence of a "double vortex" near the electrodes.

  12. Determining interface properties limiting open-circuit voltage in heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Brandt, Riley E. [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA; Mangan, Niall M. [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA; Li, Jian V. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Lee, Yun Seog [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA; Buonassisi, Tonio [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

    2017-05-09

    The development of new thin-film photovoltaic (PV) absorbers is often hindered by the search for an optimal heterojunction contact; an unoptimized contact may be mistaken for poor quality of the underlying absorber, making it difficult to assess the reasons for poor performance. Therefore, quantifying the loss in device efficiency and open-circuit voltage (VOC) as a result of the interface is a critical step in evaluating a new material. In the present work, we fabricate thin-film PV devices using cuprous oxide (Cu2O), with several different n-type heterojunction contacts. Their current-voltage characteristics are measured over a range of temperatures and illumination intensities (JVTi). We quantify the loss in VOC due to the interface and determine the effective energy gap at the interface. The effective interface gap measured by JVTi matches the gap measured by X-ray photoelectron spectroscopy, albeit with higher energy resolution and an order of magnitude faster. We discuss potential artifacts in JVTi measurements and areas where analytical models are insufficient. Applying JVTi to complete devices, rather than incomplete material stacks, suggests that it can be a quick, accurate method to assess the loss due to unoptimized interface band offsets in thin-film PV devices.

  13. Ultra high open circuit voltage (>1 V) of poly-3-hexylthiophene based organic solar cells with concentrated light

    DEFF Research Database (Denmark)

    Tromholt, Thomas; Madsen, Morten Vesterager; Krebs, Frederik C

    2013-01-01

    One approach to increasing polymer solar cell efficiency is to blend poly-(3-hexyl-thiophene) with poorly electron accepting fullerene derivatives to obtain higher open circuit voltage (Voc). In this letter concentrated light is used to study the electrical properties of cell operation at up...... to 2000 solar intensities of these photoactive blends. Comparison of solar cells based on five different fullerene derivatives shows that at both short circuit and open circuit conditions, recombination remains unchanged up to 50 suns. Determination of Voc at 2000 suns demonstrated that the same...

  14. Design of Configurable Resistance Divider Type DAC-PUF Circuit%可配置电阻分压型DAC-PUF电路设计

    Institute of Scientific and Technical Information of China (English)

    汪鹏君; 李刚; 钱浩宇

    2016-01-01

    Physical Unclonable Functions (PUF)exploits process variation across same structure and design parameter unit circuits during the manufacturing processes to generate numerous unique,random and unclonable security keys.In this pa-per,a configurable resistance divider type DAC-PUF scheme is proposed,which consists of input register,resistor-string based DAC,voltage comparator and timing control module.After configuring the DAC cell by applying input challenges,the PUF circuit updates keys without physically replacement.In TSMC-LP 65 nm CMOS technology,the layout occupies 72. 4μm × 87. 8μm with custom designing.Experimental results show that the PUF circuit possesses nice statistical characteristic of u-niqueness,high randomness of 99. 1%and high stability of 97. 8%,both with respect to supply voltage variation from 1. 08V to 1. 32V,and temperature variation from -40℃to 125℃.It can be effectively used in information security field.%物理不可克隆函数(Physical Unclonable Function,PUF)电路利用结构和设计参数相同的单元电路在制造过程中存在的随机工艺偏差,产生具有唯一性、随机性和不可克隆性的密钥.通过对电阻失配和数模转换器(Digital to Analogue Conversion,DAC)的研究,提出一种可配置电阻分压型DAC-PUF电路设计方案.该PUF电路由输入寄存器、电阻分压型DAC、电压比较器和时序控制模块构成.通过激励信号配置DAC单元,使该PUF电路无需更换硬件便可实现输出密钥的变化.在TSMC-LP 65 nm CMOS工艺下采用全定制方式进行版图设计,面积为72.4μm ×87.8μm.实验结果表明该PUF电路唯一性高,且在不同温度(-40~125℃)和电压(1.08~1.32V)下随机性和可靠性分别大于99.1%和97.8%,可广泛应用于信息安全领域.

  15. Transient Recovery Voltages at the Main 132kV Line Bay GIS Circuit Breaker in a Windfarm

    OpenAIRE

    Arana Aristi, Iván; Okholm, J.; Holbøll, Joachim

    2011-01-01

    This paper presents the results of investigations of the Transient Recovery Voltage (TRV) across the terminals of the main 132kV Line Bay GIS circuit breaker (GIS CB) for Walney 2, second phase of the Walney Offshore Wind Farm. Several simulations were performed where the influence of different parameters in the network was evaluated during a fault in the onshore substation. The rate of rise of recovery voltage (RRRV) and the maximum crest voltage (Uc) of the TRV across the GIS CB were compar...

  16. Nanosecond pulsed electric fields (nsPEFs) low cost generator design using power MOSFET and Cockcroft-Walton multiplier circuit as high voltage DC source

    Science.gov (United States)

    Sulaeman, M. Y.; Widita, R.

    2014-09-01

    Purpose: Non-ionizing radiation therapy for cancer using pulsed electric field with high intensity field has become an interesting field new research topic. A new method using nanosecond pulsed electric fields (nsPEFs) offers a novel means to treat cancer. Not like the conventional electroporation, nsPEFs able to create nanopores in all membranes of the cell, including membrane in cell organelles, like mitochondria and nucleus. NsPEFs will promote cell death in several cell types, including cancer cell by apoptosis mechanism. NsPEFs will use pulse with intensity of electric field higher than conventional electroporation, between 20-100 kV/cm and with shorter duration of pulse than conventional electroporation. NsPEFs requires a generator to produce high voltage pulse and to achieve high intensity electric field with proper pulse width. However, manufacturing cost for creating generator that generates a high voltage with short duration for nsPEFs purposes is highly expensive. Hence, the aim of this research is to obtain the low cost generator design that is able to produce a high voltage pulse with nanosecond width and will be used for nsPEFs purposes. Method: Cockcroft-Walton multiplier circuit will boost the input of 220 volt AC into high voltage DC around 1500 volt and it will be combined by a series of power MOSFET as a fast switch to obtain a high voltage with nanosecond pulse width. The motivation using Cockcroft-Walton multiplier is to acquire a low-cost high voltage DC generator; it will use capacitors and diodes arranged like a step. Power MOSFET connected in series is used as voltage divider to share the high voltage in order not to damage them. Results: This design is expected to acquire a low-cost generator that can achieve the high voltage pulse in amount of -1.5 kV with falltime 3 ns and risetime 15 ns into a 50Ω load that will be used for nsPEFs purposes. Further detailed on the circuit design will be explained at presentation.

  17. Nanosecond pulsed electric fields (nsPEFs) low cost generator design using power MOSFET and Cockcroft-Walton multiplier circuit as high voltage DC source

    Energy Technology Data Exchange (ETDEWEB)

    Sulaeman, M. Y.; Widita, R. [Department of Physics, Nuclear Physics and Biophysics Research Division, Faculty of Mathematics and Natural Science, Institut Teknologi Bandung, Bandung (Indonesia)

    2014-09-30

    Purpose: Non-ionizing radiation therapy for cancer using pulsed electric field with high intensity field has become an interesting field new research topic. A new method using nanosecond pulsed electric fields (nsPEFs) offers a novel means to treat cancer. Not like the conventional electroporation, nsPEFs able to create nanopores in all membranes of the cell, including membrane in cell organelles, like mitochondria and nucleus. NsPEFs will promote cell death in several cell types, including cancer cell by apoptosis mechanism. NsPEFs will use pulse with intensity of electric field higher than conventional electroporation, between 20–100 kV/cm and with shorter duration of pulse than conventional electroporation. NsPEFs requires a generator to produce high voltage pulse and to achieve high intensity electric field with proper pulse width. However, manufacturing cost for creating generator that generates a high voltage with short duration for nsPEFs purposes is highly expensive. Hence, the aim of this research is to obtain the low cost generator design that is able to produce a high voltage pulse with nanosecond width and will be used for nsPEFs purposes. Method: Cockcroft-Walton multiplier circuit will boost the input of 220 volt AC into high voltage DC around 1500 volt and it will be combined by a series of power MOSFET as a fast switch to obtain a high voltage with nanosecond pulse width. The motivation using Cockcroft-Walton multiplier is to acquire a low-cost high voltage DC generator; it will use capacitors and diodes arranged like a step. Power MOSFET connected in series is used as voltage divider to share the high voltage in order not to damage them. Results: This design is expected to acquire a low-cost generator that can achieve the high voltage pulse in amount of −1.5 kV with falltime 3 ns and risetime 15 ns into a 50Ω load that will be used for nsPEFs purposes. Further detailed on the circuit design will be explained at presentation.

  18. Interface Modification of Dye-sensitized Solar Cells with Pivalic Acid to Enhance the Open-circuit Voltage

    KAUST Repository

    Li, Xin

    2009-01-01

    Pivalic acid (PVA) was used as a new coadsorbent to dye-sensitized solar cells (DSCs) to modify the interface between the TiO2 films and electrolyte. The addition of PVA improved the light-to-electricity conversion efficiency of devices by 8% by enhancing the open-circuit voltage. Copyright © 2009 The Chemical Society of Japan.

  19. Over-voltage protection system and method

    Energy Technology Data Exchange (ETDEWEB)

    Chi, Song; Dong, Dong; Lai, Rixin

    2017-05-02

    An over-voltage protection system includes an electronic valve connected across two terminals of a circuit and an over-voltage detection circuit connected across one of the plurality of semiconductor devices for detecting an over-voltage across the circuit. The electronic valve includes a plurality of semiconductor devices connected in series. The over-voltage detection circuit includes a voltage divider circuit connected to a break-over diode in a way to provide a representative low voltage to the break-over diode and an optocoupler configured to receive a current from the break-over diode when the representative low voltage exceeds a threshold voltage of the break-over diode indicating an over-voltage condition. The representative low voltage provided to the break-over diode represents a voltage across the one semiconductor device. A plurality of self-powered gate drive circuits are connected to the plurality of semiconductor devices, wherein the plurality of self-powered gate drive circuits receive over-voltage triggering pulses from the optocoupler during the over-voltage condition and switch on the plurality of semiconductor devices to bypass the circuit.

  20. Low Voltage Power Efficient Tunable Shaper Circuit With Rail-To-Rail Output Range for the HYDE Detector at FAIR

    Science.gov (United States)

    Galán, J.; López-Ahumada, R.; Sánchez-Rodríguez, T.; Torralba, A.; Carvajal, R. G.; Martel, I.

    2014-04-01

    This paper presents a low voltage, low power readout front-end system implemented in 130 nm CMOS technology. A conventional architecture that consists of charge sensitive amplifier, pole/zero cancellation and shaper has been used. The work focuses on the design of novel circuit topologies in low voltage environment minimizing the power consumption in modern deep submicron CMOS technologies. An operational amplifier with rail-to-rail output swing that uses a gain boosting technique and class-AB output stage without extra power consumption has been used for the shaper. The circuit combines excellent performances with simplicity of design and suitability for low voltage operation. The system is intended to work with silicon detectors for nuclear physics applications and is optimized to match an input capacitance of 10 pF. The system features a peaking time of 500 ns, a power dissipation of 1.57 mW/channel and an equivalent noise charge of 201 e-.

  1. Symmetry-Breaking Charge Transfer in a Zinc Chlorodipyrrin Acceptor for High Open Circuit Voltage Organic Photovoltaics

    KAUST Repository

    Bartynski, Andrew N.

    2015-04-29

    © 2015 American Chemical Society. Low open-circuit voltages significantly limit the power conversion efficiency of organic photovoltaic devices. Typical strategies to enhance the open-circuit voltage involve tuning the HOMO and LUMO positions of the donor (D) and acceptor (A), respectively, to increase the interfacial energy gap or to tailor the donor or acceptor structure at the D/A interface. Here, we present an alternative approach to improve the open-circuit voltage through the use of a zinc chlorodipyrrin, ZCl [bis(dodecachloro-5-mesityldipyrrinato)zinc], as an acceptor, which undergoes symmetry-breaking charge transfer (CT) at the donor/acceptor interface. DBP/ZCl cells exhibit open-circuit voltages of 1.33 V compared to 0.88 V for analogous tetraphenyldibenzoperyflanthrene (DBP)/C60-based devices. Charge transfer state energies measured by Fourier-transform photocurrent spectroscopy and electroluminescence show that C60 forms a CT state of 1.45 ± 0.05 eV in a DBP/C60-based organic photovoltaic device, while ZCl as acceptor gives a CT state energy of 1.70 ± 0.05 eV in the corresponding device structure. In the ZCl device this results in an energetic loss between ECT and qVOC of 0.37 eV, substantially less than the 0.6 eV typically observed for organic systems and equal to the recombination losses seen in high-efficiency Si and GaAs devices. The substantial increase in open-circuit voltage and reduction in recombination losses for devices utilizing ZCl demonstrate the great promise of symmetry-breaking charge transfer in organic photovoltaic devices.

  2. Design and test of component circuits of an integrated quantum voltage noise source for Johnson noise thermometry

    Science.gov (United States)

    Yamada, Takahiro; Maezawa, Masaaki; Urano, Chiharu

    2015-11-01

    We present design and testing of a pseudo-random number generator (PRNG) and a variable pulse number multiplier (VPNM) which are digital circuit subsystems in an integrated quantum voltage noise source for Jonson noise thermometry. Well-defined, calculable pseudo-random patterns of single flux quantum pulses are synthesized with the PRNG and multiplied digitally with the VPNM. The circuit implementation on rapid single flux quantum technology required practical circuit scales and bias currents, 279 junctions and 33 mA for the PRNG, and 1677 junctions and 218 mA for the VPNM. We confirmed the circuit operation with sufficiently wide margins, 80-120%, with respect to the designed bias currents.

  3. Analysis of a dc SQUID readout scheme with voltage feedback circuit and low-noise preamplifier

    Science.gov (United States)

    Zeng, Jia; Zhang, Yi; Schmelz, Matthias; Mück, Michael; Krause, Hans-Joachim; Braginski, Alex I.; Lee, Yong-Ho; Stolz, Ronny; Kong, Xiangyan; Xie, Xiaoming; Meyer, Hans-Georg; Offenhäusser, Andreas; Jiang, Mianheng

    2014-08-01

    We analyzed the dc SQUID with voltage feedback circuit (VFC) and a low-noise room-temperature preamplifier to evaluate the feasibility of a low-noise SQUID direct-coupled readout scheme (DRS), possibly eliminating the need for a two-stage scheme employing a SQUID preamplifier. The passive VFC, connected in parallel to the SQUID, consists of a resistor Rs in series with an inductor L s. This inductor is coupled to the SQUID by a mutual inductance Ms. The purpose of the VFC is to increase the SQUID’s flux-to-voltage transfer coefficient ∂V/∂Φ, thus reducing the preamplifier noise contribution δΦpreamp. However, at the same time, VFC introduces the thermal noise of Rs, δΦR, which may not be negligible. Generally, the noise of the readout scheme, δΦreadout, may thus include both δΦpreamp and δΦR, i.e., δΦreadout2 = δΦpreamp2 + δΦR2. To characterize the SQUID operation with VFC we introduced two dimensionless parameters, r = Rs/Rd and Δ = (M s/Mdyn) - (Rs/R d), where Rd and Mdyn = 1/(∂i/∂Φ) are dynamic properties of the SQUID itself. For assumed intrinsic SQUID parameters, we then numerically analyzed the dependence of δΦreadout noise components on r and Δ to determine their suitable ranges and the minimum of δΦreadout. To verify our analysis, we experimentally characterized, in liquid helium, three niobium SQUIDs with VFC, having suitably chosen r and Δ. The measured SQUID system flux noise was on the order of 1 μΦ0/√Hz, comparable to the intrinsic noise of the SQUID itself. The deduced equivalent voltage noise was comparable to that of a SQUID preamplifier in the two-stage readout. Simple single-stage ultra-low-noise SQUID DRS readout was thus demonstrated.

  4. Theoretical investigation of the open circuit voltage: P3HT/9,9'-bisfluorenylidene derivative devices.

    Science.gov (United States)

    Carlotto, Silvia

    2014-07-03

    The calculation of the power conversion efficiency (PCE) value for a bulk heterojunction (BHJ) organic solar cell is complex due to the wide number of parameters involved in the processes. This study focuses the attention on the molecular parameters involved into the open circuit voltage and the PCE definitions and in particular on the electronic coupling and on the lowest unoccupied molecular orbital (LUMO) of the acceptor. A simplified model system composed by a polymer as donor and a novel class of molecules (9,9'-bisfluorenylidene derivatives) as acceptor has been proposed as prototype to simulate the BHJ organic solar cell interface. Several substituents on different positions are tested and the chemical nature/position of substituents have a relevant influence on the electronic coupling and energy level values. Geometrical and electronic properties are obtained using density functional theory (DFT) and time-dependent (TD)-DFT calculations, respectively. A new hypothesis suggests that the minimization of the electronic coupling between the LUMO of the acceptor and the highest occupied molecular orbital (HOMO) of the donor can enhance the PCE reducing the recombination interface processes and calculations showing the possibility to minimize this parameter and fine-tune acceptor energy level through the acceptor functionalization. An accurate balance between electronic coupling and on the LUMO of the acceptor allows to propose the more performing candidate as electron acceptor in a P3HT/99'BF derivative BHJ solar cell.

  5. Simulation and Experimental Study of Arc Column Expansion After Ignition in Low-Voltage Circuit Breakers

    Institute of Scientific and Technical Information of China (English)

    MA Qiang; RONG Mingzhe; WU Yi; XU Tiejun; SUN Zhiqiang

    2008-01-01

    The dynamicprocess of arc pressure and corresponding arc column expansion, which is the main feature after arc ignition and has a significant effect on the breaking behaviour of low -voltage circuit breakers, is studied. By constructing a three dimensional mathematical model of air arc plasma and adopting the Control Volume Method, the parameters of arc plasma including temperature and pressure axe obtained. The variations of pressure field and temperature field with time are simulated. The result indicates that there are six stages for the process of arc column expansion according to the variation of pressure in arc chamber. In the first stage, the maximal pressure locates in the region close to cathode, and in the second stage the maximal pressure shifts to the region close to the anode. In the third stage, the pressure difference between the middle of arc column and the ambient gas is very large, so the arc column begins to expand apparently. In the fourth stage, the pressure wave propagates towards both ends and the maximal pressure appears at the two ends when the pressure wave reaches both sidewalls. In the fifth stage, the pressure wave is reflected and collides in the middle of the arc chamber. In the last stage, the propagation and reflection of pressure wave will repeat several times until a steady burning state is reached. In addition, the experimental results of arc column expansion, corresponding to the arc pressure variation, are presented to verify the simulation results.

  6. SOI-Based High-Voltage, High-Temperature Integrated Circuit Gate Driver for SiC-Based Power FETs

    Energy Technology Data Exchange (ETDEWEB)

    Huque, Mohammad A [ORNL; Tolbert, Leon M [ORNL; Blalock, Benjamin [University of Tennessee, Knoxville (UTK); Islam, Syed K [University of Tennessee, Knoxville (UTK)

    2010-01-01

    Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimizing system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8-m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

  7. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

    Science.gov (United States)

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-05-09

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

  8. Design and test of component circuits of an integrated quantum voltage noise source for Johnson noise thermometry

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Takahiro, E-mail: yamada-takahiro@aist.go.jp [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568 (Japan); Maezawa, Masaaki [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568 (Japan); Urano, Chiharu [National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Central 3, Umezono 1-1-1, Tsukuba, Ibaraki 305-8563 (Japan)

    2015-11-15

    Highlights: • We demonstrated RSFQ digital components of a new quantum voltage noise source. • A pseudo-random number generator and variable pulse number multiplier are designed. • Fabrication process is based on four Nb wiring layers and Nb/AlOx/Nb junctions. • The circuits successfully operated with wide dc bias current margins, 80–120%. - Abstract: We present design and testing of a pseudo-random number generator (PRNG) and a variable pulse number multiplier (VPNM) which are digital circuit subsystems in an integrated quantum voltage noise source for Jonson noise thermometry. Well-defined, calculable pseudo-random patterns of single flux quantum pulses are synthesized with the PRNG and multiplied digitally with the VPNM. The circuit implementation on rapid single flux quantum technology required practical circuit scales and bias currents, 279 junctions and 33 mA for the PRNG, and 1677 junctions and 218 mA for the VPNM. We confirmed the circuit operation with sufficiently wide margins, 80–120%, with respect to the designed bias currents.

  9. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

    Science.gov (United States)

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-05-01

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V‑1 sec‑1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

  10. Mechanical Fault Diagnosis of High Voltage Circuit Breakers Based on Variational Mode Decomposition and Multi-Layer Classifier

    Directory of Open Access Journals (Sweden)

    Nantian Huang

    2016-11-01

    Full Text Available Mechanical fault diagnosis of high-voltage circuit breakers (HVCBs based on vibration signal analysis is one of the most significant issues in improving the reliability and reducing the outage cost for power systems. The limitation of training samples and types of machine faults in HVCBs causes the existing mechanical fault diagnostic methods to recognize new types of machine faults easily without training samples as either a normal condition or a wrong fault type. A new mechanical fault diagnosis method for HVCBs based on variational mode decomposition (VMD and multi-layer classifier (MLC is proposed to improve the accuracy of fault diagnosis. First, HVCB vibration signals during operation are measured using an acceleration sensor. Second, a VMD algorithm is used to decompose the vibration signals into several intrinsic mode functions (IMFs. The IMF matrix is divided into submatrices to compute the local singular values (LSV. The maximum singular values of each submatrix are selected as the feature vectors for fault diagnosis. Finally, a MLC composed of two one-class support vector machines (OCSVMs and a support vector machine (SVM is constructed to identify the fault type. Two layers of independent OCSVM are adopted to distinguish normal or fault conditions with known or unknown fault types, respectively. On this basis, SVM recognizes the specific fault type. Real diagnostic experiments are conducted with a real SF6 HVCB with normal and fault states. Three different faults (i.e., jam fault of the iron core, looseness of the base screw, and poor lubrication of the connecting lever are simulated in a field experiment on a real HVCB to test the feasibility of the proposed method. Results show that the classification accuracy of the new method is superior to other traditional methods.

  11. Simulation Study on the Open-Circuit Voltage of Amorphous Silicon p-i-n Solar Cells Using AMPS-1D

    Directory of Open Access Journals (Sweden)

    B.M. Omer

    2014-04-01

    Full Text Available AMPS-1D (Analysis of Microelectronic and Photonic Structure simulation program was used to simulate Amorphous Silicon p-i-n Solar Cell. The simulated result of illuminated current density-voltage characteristics was in a good agreement with experimental values. The dependence of the open-circuit voltage on the characteristics of the a-Si:H intrinsic layer was investigated. The simulation result shows that the open-circuit voltage does not depend on the thickness of the intrinsic layer. The open-circuit voltage decreases when the front contact barrier height is small or the energy gap of the intrinsic layer is small. The open-circuit voltage increases when the distribution of the tail states is sharp or the capture cross sections of these states are small.

  12. Tesla’s high voltage and high frequency generators with oscillatory circuits

    Directory of Open Access Journals (Sweden)

    Cvetić Jovan M.

    2016-01-01

    Full Text Available The principles that represent the basics of the work of the high voltage and high frequency generator with oscillating circuits will be discussed. Until 1891, Tesla made and used mechanical generators with a large number of extruded poles for the frequencies up to about 20 kHz. The first electric generators based on a new principle of a weakly coupled oscillatory circuits he used for the wireless signal transmission, for the study of the discharges in vacuum tubes, the wireless energy transmission, for the production of the cathode rays, that is x-rays and other experiments. Aiming to transfer the signals and the energy to any point of the surface of the Earth, in the late of 19th century, he had discovered and later patented a new type of high frequency generator called a magnifying transmitter. He used it to examine the propagation of electromagnetic waves over the surface of the Earth in experiments in Colorado Springs in the period 1899-1900. Tesla observed the formation of standing electromagnetic waves on the surface of the Earth by measuring radiated electric field from distant lightning thunderstorm. He got the idea to generate the similar radiation to produce the standing waves. On the one hand, signal transmission, i.e. communication at great distances would be possible and on the other hand, with more powerful and with at least three magnifying transmitters the wireless transmission of energy without conductors at any point of the Earth surface could also be achieved. The discovery of the standing waves on the surface of the Earth and the invention of the magnifying transmitter he claimed his greatest inventions. Less than two years later, at the end of 1901, he designed and started to build a much stronger magnifying transmitter on Long Island near New York City (the Wardenclyffe tower wishing to become a world telecommunication center. During the tower construction, he elaborated the plans for an even stronger transmitter based on

  13. Study program to improve the open-circuit voltage of low resistivity single crystal silicon solar cells

    Science.gov (United States)

    Minnucci, J. A.; Matthei, K. W.

    1980-01-01

    The results of a 14 month program to improve the open circuit voltage of low resistivity silicon solar cells are described. The approach was based on ion implantation in 0.1- to 10.0-ohm-cm float-zone silicon. As a result of the contract effort, open circuit voltages as high as 645 mV (AMO 25 C) were attained by high dose phosphorus implantation followed by furnace annealing and simultaneous SiO2 growth. One key element was to investigate the effects of bandgap narrowing caused by high doping concentrations in the junction layer. Considerable effort was applied to optimization of implant parameters, selection of furnace annealing techniques, and utilization of pulsed electron beam annealing to minimize thermal process-induced defects in the completed solar cells.

  14. The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

    Science.gov (United States)

    Weizer, V. G.; Godlewski, M. P.

    1984-01-01

    It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.

  15. A new generation of medium-voltage switchboards and circuit-breakers; Eine neue Generation von Mittelspannungsschaltanlagen und -leistungsschaltern

    Energy Technology Data Exchange (ETDEWEB)

    Saemann, D.; Weichert, R.; Werner, S. [Siemens AG, Erlangen (Germany). Bereich Energieuebertragung und -verteilung

    1998-04-06

    Todays market and the trend towards globalization of business both call for new products. The authors describe the new generation of medium-voltage switchgears and circuit-breakers, along with the benefit they bring for customers. (orig./RHM) [Deutsch] Der Markt und die Globalisierung des Geschaeftes fordern neue Produkte. Die Verfasser beschreiben die neue Generation von Mittelspannungsschaltanlagen und -schaltern sowie deren Nutzen fuer die Anwender. (orig./RHM)

  16. Limitations on the open-circuit voltage imposed by P/+/ and N/+/ regions in silicon solar cells

    Science.gov (United States)

    Shibib, M. A.; Fossum, J. G.

    1981-02-01

    It is shown theoretically and experimentally that the emitter recombination current, which limits the open-circuit voltage of silicon solar cells, can be more easily suppressed in P(+)N cells than in N(+)P cells. This result is due to fundamental effects that occur in heavily doped silicon: degeneracy of the majority charge carriers, Auger recombination, and energy-band-gap narrowing. Cell designs to suppress the emitter current are discussed, and experimental data supporting our theoretical analysis are presented.

  17. Electromagnetic compatibility between secondary and high voltage circuits; Compatibilidade eletromagnetica entre circuitos secundarios e de alta tensao

    Energy Technology Data Exchange (ETDEWEB)

    Alves, Mario Fabiano [Pontificia Univ. Catolica de Minas Gerais, Belo Horizonte, MG (Brazil)

    1997-11-01

    Electromagnetic fields generated by high voltage circuits may affect the performance of sensible loads in an electric power substation. In order to reduce such interferences, and guarantee the adequate performance of the equipment, this work proposes some measures which may be applied to the project during the installation phase, such as the equalization of high frequency power, and the utilization of protective equipment as well as the integration of grounding systems 9 refs., 3 figs.

  18. Understanding device-structure-induced variations in open-circuit voltage for organic photovoltaics.

    Science.gov (United States)

    Wang, Zhiping; Uemura, Yu; Zhou, Ying; Miyadera, Tetsuhiko; Azumi, Reiko; Yoshida, Yuji; Chikamatsu, Masayuki

    2015-05-27

    We investigate the structural influences on the device performance, especially on open-circuit voltage (V(OC)) in squaraine (SQ)/fullerene (C60) bilayer cells. Simply changing the SQ thickness could lead to 40% variation in V(OC) from 0.62 to 0.86 V. The ionization potential (IP) of SQ films and recombination at the anode surface as well as donor/acceptor (D/A) interface sensitively vary with film thicknesses, which account for the shifts in V(OC). The anode recombination can be effectively suppressed by preventing direct contact between C60 and the anode with a buffer layer, delivering an elevated V(OC). Through polarized infrared-multiple-angle incidence resolution spectroscopy measurement, the molecular structure of SQ films is found to gradually evolve from lying-down on indium-tin oxide substrates with noncentrosymmetric orientation at low thicknesses to random structure at high thicknesses. The different molecular orientation may yield different strengths of electronic coupling, which affects the charge-carrier recombination and thus V(OC). Moreover, the oriented SQ films would spontaneously compose aligned dipole moments at the D/A interface because of the strong dipolar effects in SQ molecules identified by density functional theory calculations, whereas no aligned interfacial dipole moment exists in the random structure. The resulting interfacial dipole moments would form an electric field at the D/A interface, leading to variations in the IP and thus impacting V(OC). Our findings demonstrate that V(OC) in organic photovoltaic cells is critically associated with the molecular orientation that affects the charge-carrier recombination and interfacial dipole alignment, which should be seriously taken into consideration for the design of organic molecules and optimization of the cell efficiency.

  19. NBTI-Aware Transient Fault Rate Analysis Method for Logic Circuit Based on Probability Voltage Transfer Characteristics

    Directory of Open Access Journals (Sweden)

    Zhiming Yang

    2016-01-01

    Full Text Available The reliability of Very Large Scale Integration (VLSI circuits has become increasingly susceptible to transient faults induced by environmental noise with the scaling of technology. Some commonly used fault tolerance strategies require statistical methods to accurately estimate the fault rate in different parts of the logic circuit, and Monte Carlo (MC simulation is often applied to complete this task. However, the MC method suffers from impractical computation costs due to the size of the circuits. Furthermore, circuit aging effects, such as negative bias temperature instability (NBTI, will change the characteristics of the circuit during its lifetime, leading to a change in the circuit’s noise margin. This change will increase the complexity of transient fault rate estimation tasks. In this paper, an NBTI-aware statistical analysis method based on probability voltage transfer characteristics is proposed for combinational logic circuit. This method can acquire accurate fault rates using a discrete probability density function approximation process, thus resolving the computation cost problem of the MC method. The proposed method can also consider aging effects and analyze statistical changes in the fault rates. Experimental results demonstrate that, compared to the MC simulation, our method can achieve computation times that are two orders of magnitude shorter while maintaining an error rate less than 9%.

  20. Approaches to Suppressing Shaft Voltage in Brushless DC Motor Driven by PWM Inverter Based on Ungrounded Common-Mode Equivalent Circuit

    Science.gov (United States)

    Maetani, Tatsuo; Isomura, Yoshinori; Watanabe, Akihiko; Iimori, Kenichi; Morimoto, Shigeo

    This paper describes an ungrounded common-mode equivalent circuit for a motor driven by a voltage-source PWM inverter. When the capacitance of the rotor was is small, the reversal of the polarities of the common-mode voltage and shaft voltage is observed. In order to model this reversal, a bridge-type equivalent circuit is proposed. On the basis of calculations and experiment, it is found the values and polarity of the shaft voltage can be are accurately determined with the proposed equivalent circuit. Furthermore, the capacitance value of the insulated rotor required to make the shaft voltage equal to or less than the dielectric breakdown voltage of the bearing grease is obtained.

  1. Interface band gap narrowing behind open circuit voltage losses in Cu2ZnSnS4 solar cells

    DEFF Research Database (Denmark)

    Crovetto, Andrea; Palsgaard, Mattias Lau Nøhr; Gunst, Tue

    2017-01-01

    We present evidence that bandgap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu2ZnSnS4/CdS solar cells. Bandgap narrowing is caused by surface states that extend the Cu2ZnSnS4valence band into the forbidden gap. Those surface states are consi......We present evidence that bandgap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu2ZnSnS4/CdS solar cells. Bandgap narrowing is caused by surface states that extend the Cu2ZnSnS4valence band into the forbidden gap. Those surface states...... Zn to passivate those surface states. Focusing future research on Zn-based buffers is expected to significantly improve the open circuit voltage and efficiency of pure-sulfide Cu2ZnSnS4 solar cells....

  2. Ultra-high open-circuit voltage of perovskite solar cells induced by nucleation thermodynamics on rough substrates

    Science.gov (United States)

    Li, Yan; Ding, Bin; Chu, Qian-Qian; Yang, Guan-Jun; Wang, Mingkui; Li, Chang-Xin; Li, Chang-Jiu

    2017-01-01

    To obtain high performance CH3NH3PbI3 perovskite solar cells, it is highly important to realise a high open-circuit voltage. Calculation results based on a modified diode model have indicated that a low bare ratio ϕ of the perovskite film is the most important factor determining the open-circuit voltage, where ϕ is defined as the ratio of the projection of the uncovered area of the perovskite film to the apparent area of the total substrate surface. To realise a low ϕ, we investigate the nucleation behaviour of crystals on rough substrates. The analysis results predict that, when CH3NH3PbI3 is deposited on conventional transparent conductive oxide substrates such as fluorine-doped tin oxide, preferential heterogeneous nucleation will occur on the concave regions of the substrate; then, depending on the subsequent growth step, full coverage of the perovskite film at both the macroscopic and microscopic scales is realised. As a result, an ultra-high open-circuit voltage, i.e., 1.20 V, can be achieved in devices using the full coverage CH3NH3PbI3 film. The thermodynamics theory of precipitation nucleation should shed light on solution engineering of thin films. PMID:28401890

  3. Ultra-high open-circuit voltage of perovskite solar cells induced by nucleation thermodynamics on rough substrates

    Science.gov (United States)

    Li, Yan; Ding, Bin; Chu, Qian-Qian; Yang, Guan-Jun; Wang, Mingkui; Li, Chang-Xin; Li, Chang-Jiu

    2017-04-01

    To obtain high performance CH3NH3PbI3 perovskite solar cells, it is highly important to realise a high open-circuit voltage. Calculation results based on a modified diode model have indicated that a low bare ratio ϕ of the perovskite film is the most important factor determining the open-circuit voltage, where ϕ is defined as the ratio of the projection of the uncovered area of the perovskite film to the apparent area of the total substrate surface. To realise a low ϕ, we investigate the nucleation behaviour of crystals on rough substrates. The analysis results predict that, when CH3NH3PbI3 is deposited on conventional transparent conductive oxide substrates such as fluorine-doped tin oxide, preferential heterogeneous nucleation will occur on the concave regions of the substrate; then, depending on the subsequent growth step, full coverage of the perovskite film at both the macroscopic and microscopic scales is realised. As a result, an ultra-high open-circuit voltage, i.e., 1.20 V, can be achieved in devices using the full coverage CH3NH3PbI3 film. The thermodynamics theory of precipitation nucleation should shed light on solution engineering of thin films.

  4. Enhancement in open-circuit voltage of implantable CMOS-compatible glucose fuel cell by improving the anodic catalyst

    Science.gov (United States)

    Niitsu, Kiichi; Ando, Takashi; Kobayashi, Atsuki; Nakazato, Kazuo

    2017-01-01

    This paper presents an implantable CMOS-compatible glucose fuel cell that generates an open-circuit voltage (OCV) of 880 mV. The developed fuel cell is solid-catalyst-based and manufactured from biocompatible materials; thus, it can be implanted to the human body. Additionally, since the cell can be manufactured using a semiconductor (CMOS) fabrication process, it can also be manufactured together with CMOS circuits on a single silicon wafer. In the literature, an implantable CMOS-compatible glucose fuel cell has been reported. However, its OCV is 192 mV, which is insufficient for CMOS circuit operation. In this work, we have enhanced the performance of the fuel cell by improving the electrocatalytic ability of the anode. The prototype with the newly proposed Pt/carbon nanotube (CNT) anode structure successfully achieved an OCV of 880 mV, which is the highest ever reported.

  5. The correlation of open-circuit voltage with bandgap in amorphous silicon-based {ital pin} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Crandall, R.S. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Schiff, E.A. [Department of Physics, Syracuse University, Syracuse, New York 13244-1130 (United States)

    1996-01-01

    We briefly review the correlation of open-circuit voltages {ital V}{sub OC} with the bandgap of the intrinsic layer in amorphous silicon based {ital pin} solar cells. We discuss two mechanisms which limit {ital V}{sub OC}: intrinsic layer recombination, and the built-in potential {ital V}{sub BI}. In particular we discuss Li{close_quote}s proposal that the open-circuit voltages in higher bandgap cells ({ital E}{sub G}{gt}1.9 eV) are {ital V}{sub BI}-limited. Based on computer simulations of {ital pin} solar cells we propose that {ital V}{sub BI} limitation occurs when the recombination limit to {ital V}{sub OC} exceeds the cell{close_quote}s field-reversal voltage {ital V}{sub R}. For {ital a}-Si:H based cells this field-reversal voltage occurs at about {ital V}{sub BI}-0.3 V. This proposal would account for the observation that {ital V}{sub BI} limitation occurs for {ital V}{sub OC} significantly smaller than {ital V}{sub BI}. {copyright} {ital 1996 American Institute of Physics.}

  6. Polycrystalline silicon thin-film solar cells prepared by layered laser crystallization with 540 mV open circuit voltage

    Energy Technology Data Exchange (ETDEWEB)

    Plentz, Jonathan, E-mail: jonathan.plentz@ipht-jena.de [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena (Germany); Experimental Physics I, Institute of Physics, Ilmenau University of Technology, Weimarer Str. 32, 98693 Ilmenau (Germany); Andrä, Gudrun; Gawlik, Annett; Höger, Ingmar; Jia, Guobin; Falk, Fritz [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena (Germany)

    2014-07-01

    Polycrystalline silicon thin film solar cells on a glass substrate are investigated. The solar cell layer structure was generated by a two-step process in which first a 100–600 nm thin seed layer is formed by diode laser crystallization of electron beam evaporated amorphous silicon. In a second step this layer is epitaxially thickened to 2–3.5 μm by layered laser crystallization. In this process further amorphous silicon is deposited and in situ repeatedly is irradiated by excimer laser pulses. The polycrystalline layer consists of grains several hundreds of microns long and several tens of microns wide and it contains a p{sup +}–p–n{sup +} doping profile. After deposition a rapid thermal annealing and hydrogen passivation steps follow. The back and front contacts are prepared after mesa structuring. The influence of the seed layer thickness on the solar cell performance was investigated. In addition, the absorber contamination due to the background pressure during absorber deposition and its influence on the short circuit current density was investigated. The best parameters reached for various solar cells are 540 mV open circuit voltage, 20.3 mA/cm{sup 2} short circuit current density (without light trapping), 75% fill factor, and 5.2% efficiency. - Highlights: • Layered laser crystallization leads to grain sizes of 10–300 μm on glass. • Open circuit voltage of 540 mV and efficiency of 5.2% are achieved. • Short circuit current is influenced by background pressure during deposition. • Short circuit current density of 20.3 mA/cm{sup 2} is reached without light trapping. • Progress requires pressures below 10{sup −7} hPa and deposition rates over 100 nm/min.

  7. Study on Factors for Accurate Open Circuit Voltage Characterizations in Mn-Type Li-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Natthawuth Somakettarin

    2017-03-01

    Full Text Available Open circuit voltage (OCV of lithium batteries has been of interest since the battery management system (BMS requires an accurate knowledge of the voltage characteristics of any Li-ion batteries. This article presents an OCV characteristic for lithium manganese oxide (LMO batteries under several experimental operating conditions, and discusses factors for accurate OCV determination. A test system is developed for OCV characterization based on the OCV pulse test method. Various factors for the OCV behavior, such as resting period, step-size of the pulse test, testing current amplitude, hysteresis phenomena, and terminal voltage relationship, are investigated and evaluated. To this end, a general OCV model based on state of charge (SOC tracking is developed and validated with satisfactory results.

  8. A High-Voltage Integrated Circuit Engine for a Dielectrophoresis-based Programmable Micro-Fluidic Processor

    Science.gov (United States)

    Current, K. Wayne; Yuk, Kelvin; McConaghy, Charles; Gascoyne, Peter R. C.; Schwartz, Jon A.; Vykoukal, Jody V.; Andrews, Craig

    2010-01-01

    A high-voltage (HV) integrated circuit has been demonstrated to transport droplets on programmable paths across its coated surface. This chip is the engine for a dielectrophoresis (DEP)-based micro-fluidic lab-on-a-chip system. This chip creates DEP forces that move and help inject droplets. Electrode excitation voltage and frequency are variable. With the electrodes driven with a 100V peak-to-peak periodic waveform, the maximum high-voltage electrode waveform frequency is about 200Hz. Data communication rate is variable up to 250kHz. This demonstration chip has a 32×32 array of nominally 100V electrode drivers. It is fabricated in a 130V SOI CMOS fabrication technology, dissipates a maximum of 1.87W, and is about 10.4 mm × 8.2 mm. PMID:23989241

  9. Analog Circuit Design Low Voltage Low Power; Short Range Wireless Front-Ends; Power Management and DC-DC

    CERN Document Server

    Roermund, Arthur; Baschirotto, Andrea

    2012-01-01

    The book contains the contribution of 18 tutorials of the 20th workshop on Advances in Analog Circuit Design.  Each part discusses a specific to-date topic on new and valuable design ideas in the area of analog circuit design. Each part is presented by six experts in that field and state of the art information is shared and overviewed. This book is number 20 in this successful series of Analog Circuit Design, providing valuable information and excellent overviews of Low-Voltage Low-Power Data Converters - Chaired by Prof. Anderea Baschirotto, University of Milan-Bicocca Short Range Wireless Front-Ends - Chaired by Prof. Arthur van Roermund, Eindhoven University of Technology Power management and DC-DC - Chaired by Prof. M. Steyaert, Katholieke University Leuven Analog Circuit Design is an essential reference source for analog circuit designers and researchers wishing to keep abreast with the latest development in the field. The tutorial coverage also makes it suitable for use in an advanced design.

  10. The principle of elaboration of the relay protection against short circuits between the closely placed phases of high voltage electrical line

    Directory of Open Access Journals (Sweden)

    Kiorsak M.

    2015-12-01

    Full Text Available The article is devoted to the elaboration of the principle of relay protection against short circuits between the closely placed phases of higher voltage electrical line with self-compensation, based on the six phase’s symmetrical components. It is shown that the unsymmetrical short circuits between the closely placed phases are characterized by appearance of zero and tertiary sequences of symmetrical components. This fact can be used to choose them for relay protection. The electrical basic circuits and formulas for calculation of the passive parameters of zero and tertiary filters of currents (voltages are done. It is presented the structural-functional basic circuit scheme for relay protection against short circuits between the closely placed phases of higher voltage electrical line with self-compensation.

  11. Re-evaluating the role of sterics and electronic coupling in determining the open-circuit voltage of organic solar cells

    KAUST Repository

    Graham, Kenneth

    2013-07-30

    The effects of sterics and molecular orientation on the open-circuit voltage and absorbance properties of charge-transfer states are explored in model bilayer organic photovoltaics. It is shown that the open-circuit voltage correlates linearly with the charge-transfer state energy and is not significantly influenced by electronic coupling. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. On-line condition monitoring systems for high voltage circuit breakers : a collaborative research project 1997-2001

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-07-01

    A three year field project was initiated to review and evaluate the state of the art in on-line conditioning monitoring technology for a high voltage (240 kV SF6) circuit breaker located at Dorsey Converter Station. The ELF breaker is a three independent pole design which allows for three separate monitoring systems. This project involved the installation of a different type of monitoring system on each phase and incorporated many types of transducers. Each monitoring system measured the same basic parameters including contact travel, 'a' and 'b' auxiliary contacts, phase currents, coil currents, heater and pump current, plus SF6/CF4 pressure and temperature. Over the entire monitoring period the breaker was operated over 700 times at rated voltage and an additional 300 times during maintenance. Temperature conditions ranged from -35 to +30 degrees C. The use of on-line monitoring provided many valuable results and enhanced the knowledge base for the apparatus under the test. It was determined that on-line monitoring of HV circuit breakers has potential, but installation has to be considered carefully. Monitoring systems can offer improvement in the understanding of how circuit breakers work and provide input into RCM programs. However, monitoring systems themselves are subject to failure and require maintenance and attention. 2 refs., 2 tabs., 7 figs.

  13. Circuit-field coupled finite element analysis method for an electromagnetic acoustic transducer under pulsed voltage excitation

    Institute of Scientific and Technical Information of China (English)

    Hao Kuan-Sheng; Huang Song-Ling; Zhao Wei; Wang Shen

    2011-01-01

    This paper presents an analytical method for electromagnetic acoustic transducers (EMATs) under voltage excitation and considers the non-uniform distribution of the biased magnetic field. A complete model of EMATs including the non-uniform biased magnetic field, a pulsed eddy current field and the acoustic field is built up. The pulsed voltage excitation is transformed to the frequency domain by fast Fourier transformation (FFT). In terms of the time harmonic field equations of the EMAT system, the impedances of the coils under different frequencies are calculated according to the circuit-field coupling method and Poynting's theorem. Then the currents under different frequencies are calculated according to Ohm's law and the pulsed current excitation is obtained by inverse fast Fourier transformation (IFFT).Lastly, the sequentially coupled finite element method (FEM) is used to calculate the Lorentz force in the EMATs under the current excitation. An actual EMAT with a two-layer two-bundle printed circuit board (PCB) coil, a rectangular permanent magnet and an aluminium specimen is analysed. The coil impedances and the pulsed current are calculated and compared with the experimental results. Their agreement verified the validity of the proposed method. Furthermore, the influences of lift-off distances and the non-uniform static nagnetic field on the Lorentz force under pulsed voltage excitation are studied.

  14. InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage

    Institute of Scientific and Technical Information of China (English)

    Zhang Xiao-Bin; Wang Xiao-Liang; Xiao Hong-Ling; Yang Cui-Bai; Hou Qi-Feng; Yin Hai-Bo; Chen Hong; Wang Zhan-Guo

    2011-01-01

    In this paper, InGaN/GaN multiple quantum well solar cells (MQWSCs) with an In content of 0.15 are fabricated and studied. The short-circuit density, fill factor and open-circuit voltage (Voc) of the device are 0.7 mA/cm2, 0.40 and 2.22 V, respectively. The results exhibit a significant enhancement of Voc compared with those of InGaN-based hetero and homojunction cells. This enhancement indicates that the InGaN/GaN MQWSC offers an effective way for increasing Voc of an In-rich InxGa1-xN solar cell. The device exhibits an external quantum efficiency (EQE) of 36% (7%) at 388 nm (430 nm). The photovoltaic performance of the device can be improved by optimizing the structure of the InGaN/GaN multiple quantum well.

  15. Charged grain boundaries reduce the open-circuit voltage of polycrystalline solar cells—An analytical description

    Science.gov (United States)

    Gaury, Benoit; Haney, Paul M.

    2016-12-01

    Analytical expressions are presented for the dark current-voltage relation J(V) of a pn+ junction with positively charged columnar grain boundaries with high defect density. These expressions apply to non-depleted grains with sufficiently high bulk hole mobilities. The accuracy of the formulas is verified by direct comparison to numerical simulations. Numerical simulations further show that the dark J(V) can be used to determine the open-circuit potential Voc of an illuminated junction for a given short-circuit current density Jsc . A precise relation between the grain boundary properties and Voc is provided, advancing the understanding of the influence of grain boundaries on the efficiency of thin film polycrystalline photovoltaics like CdTe and Cu(In,Ga)Se2 .

  16. Low-Power Circuit Techniques for Low-Voltage Pipelined ADCs Based on Switched-Opamp Architecture

    Science.gov (United States)

    Ou, Hsin-Hung; Chang, Soon-Jyh; Liu, Bin-Da

    This paper proposes useful circuit structures for achieving a low-voltage/low-power pipelined ADC based on switched-opamp architecture. First, a novel unity-feedback-factor sample-and-hold which manipulates the features of switched-opamp technique is presented. Second, opamp-sharing is merged into switched-opamp structure with a proposed dual-output opamp configuration. A 0.8-V, 9-bit, 10-Msample/s pipelined ADC is designed to verify the proposed circuit. Simulation results using a 0.18-μm CMOS 1P6M process demonstrate the figure-of-merit of this pipelined ADC is only 0.71pJ/step.

  17. State Evaluation Method Based on Multiagent System for High Voltage Circuit Breaker's Mechanical Properties

    Institute of Scientific and Technical Information of China (English)

    LI Bin; LIN Xin; XU Jianyuan; QI Hongwei; ZHANG Bin

    2013-01-01

    To realize multi-signal joint diagnosis in circuit breaker's state evaluation methods,and to improve their evaluation accuracy,we proposed an intelligent evaluation model of circuit breaker mechanical properties based on multiagent system.Taking a circuit breaker which has mono-stable permanent magnetic operating mechanism as the example,its model involves four kinds of signals:auxiliary contact,operating mechanism current,travel of the contact,and mechanical vibration.Detailed analyses on the evaluation agent's architecture and the process of the system's multiagent evaluation and ratiocination were also proposed.Moreover,it is proved by three application cases that the proposed method could accurately evaluate circuit breaker status not only with normal signals,but also in certain signal failure situations; meanwhile the model has a strong self-learning ability.

  18. Comparative Study of Online Open Circuit Voltage Estimation Techniques for State of Charge Estimation of Lithium-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Hicham Chaoui

    2017-04-01

    Full Text Available Online estimation techniques are extensively used to determine the parameters of various uncertain dynamic systems. In this paper, online estimation of the open-circuit voltage (OCV of lithium-ion batteries is proposed by two different adaptive filtering methods (i.e., recursive least square, RLS, and least mean square, LMS, along with an adaptive observer. The proposed techniques use the battery’s terminal voltage and current to estimate the OCV, which is correlated to the state of charge (SOC. Experimental results highlight the effectiveness of the proposed methods in online estimation at different charge/discharge conditions and temperatures. The comparative study illustrates the advantages and limitations of each online estimation method.

  19. Correlation between LUMO offset of donor/acceptor molecules to an open circuit voltage in bulk heterojunction solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Mola, Genene Tessema, E-mail: mola@ukzn.ac.za [School of. Chemistry and Physics, University of Kwazulu-Natal, Pietermaritzburg Campus, Private Bag X01, Scottsville 3209 (South Africa); Abera, Newayemedhin [Addis Ababa University, Department of Physics, P.O. BOX 1176, Addis Ababa (Ethiopia)

    2014-07-15

    The correlation between the open circuit voltage and the LUMO offset of the donor and acceptor polymers in the bulkheterojunction solar cell was studied for three different thiophene derivatives. The HOMO levels of all the polymers in this investigation were chosen to be similar which results in close values of ΔE{sub DA}=E{sub HOMO}{sup D}−E{sub LUMO}{sup A}. However, the measured V{sub oc} was found to be increasing with decreasing value of the LUMO offset that exists between the donor polymer and fullerene.

  20. An Azulene-Containing Low Bandgap Small Molecule for Organic Photovoltaics with High Open-Circuit Voltage.

    Science.gov (United States)

    Chen, Yao; Zhu, Youqin; Yang, Daobin; Zhao, Suling; Zhang, Lei; Yang, Lin; Wu, Jianglin; Huang, Yan; Xu, Zheng; Lu, Zhiyun

    2016-10-01

    A simple azulene-containing squaraine dye (AzUSQ) showing bandgap of 1.38 eV and hole mobility up to 1.25×10(-4)  cm(2)  V(-1)  s(-1) was synthesized. With its low bandgap, an organic photovoltaic (OPV) device based on it has been made that exhibits an impressive open-circuit voltages (Voc ) of 0.80 V. Hence, azulene might be a promising structural unit to construct OPV materials with simultaneous low bandgap, high hole mobility and high Voc .

  1. Hysteresis observed in quasi open-circuit voltage measurements of lithium insertion in hydrogen-containing carbons

    Energy Technology Data Exchange (ETDEWEB)

    Zheng Tao; Dahn, J.R. [Dalhousie Univ., Halifax, NS (Canada). Dept. of Physics

    1997-10-01

    High capacities with large hysteresis were observed during lithium insertion in hydrogen-containing carbons heated at temperatures near 700 C. Quasi open-circuit voltage (OCV) measurements were used to study these materials. Using a simple model developed previously, we can qualitatively model the result of the OCV measurement. It is believed that the lithium atoms bind near aromatic hydrogen at edge of each graphene layer in the materials. This activated process involves a carbon-carbon bonding change from (sp){sup 2} to (sp){sup 3} leading to large hysteresis during lithium insertion. (orig.)

  2. Low voltage logic circuits exploiting gate level dynamic body biasing in 28 nm UTBB FD-SOI

    Science.gov (United States)

    Taco, Ramiro; Levi, Itamar; Lanuzza, Marco; Fish, Alexander

    2016-03-01

    In this paper, the recently proposed gate level body bias (GLBB) technique is evaluated for low voltage logic design in state-of-the-art 28 nm ultra-thin body and box (UTBB) fully-depleted silicon-on-insulator (FD-SOI) technology. The inherent benefits of the low-granularity body-bias control, provided by the GLBB approach, are emphasized by the efficiency of forward body bias (FBB) in the FD-SOI technology. In addition, the possibility to integrate PMOS and NMOS devices into a single common well configuration allows significant area reduction, as compared to an equivalent triple well implementation. Some arithmetic circuits were designed using GLBB approach and compared to their conventional CMOS and DTMOS counterparts under different running conditions at low voltage regime. Simulation results shows that, for 300 mV of supply voltage, a 4 × 4-bit GLBB Baugh Wooley multiplier allows performance improvement of about 30% and area reduction of about 35%, while maintaining low energy consumption as compared to the conventional CMOS ⧹ DTMOS solutions. Performance and energy benefits are maintained over a wide range of process-voltage-temperature (PVT) variations.

  3. Principle and Fault Analysis of Voltage Regulator Circuit%电压调节器电路原理及故障分析

    Institute of Scientific and Technical Information of China (English)

    索明何

    2015-01-01

    Firstly, the paper explores the essential characteristics of voltage regulator through experiments, and then analyzes the circuit principle of the voltage regulator. The paper finally discusses the fault analysis method of voltage regulator circuit through the cases.%本文首先通过实验探究电压调节器的本质特性,然后分析电压调节器电路原理,最后通过案例探究电压调节器电路的故障分析方法.

  4. Circuits protection against interferences in high voltage substations; Protecao de circuitos contra interferencias em subestacoes

    Energy Technology Data Exchange (ETDEWEB)

    Hamada, Massayuki [Consultas e Aplicacoes de Engenharia Eletrica Ltda. (CAEEL) (Brazil)

    1989-12-01

    This paper makes a brief analysis of the different phenomena which may cause electromagnetic interference in high voltage substations and suggests adequate solutions to the problem according to the different events that may occur. 5 refs., 1 fig.

  5. Control strategy and hardware implementation for DC–DC boost power circuit based on proportional–integral compensator for high voltage application

    Directory of Open Access Journals (Sweden)

    Sanjeevikumar Padmanaban

    2015-06-01

    Full Text Available For high-voltage (HV applications, the designers mostly prefer the classical DC–DC boost converter. However, it lacks due to the limitation of the output voltage by the gain transfer ratio, decreased efficiency and its requirement of two sensors for feedback signals, which creates complex control scheme with increased overall cost. Furthermore, the output voltage and efficiency are reduced due to the self-parasitic behavior of power circuit components. To overcome these drawbacks, this manuscript provides, the theoretical development and hardware implementation of DC–DC step-up (boost power converter circuit for obtaining extra output-voltage high-performance. The proposed circuit substantially improves the high output-voltage by voltage-lift technology with a closed loop proportional–integral controller. This complete numerical model of the converter circuit including closed loop P-I controller is developed in simulation (Matlab/Simulink software and the hardware prototype model is implemented with digital signal processor (DSP TMS320F2812. A detailed performance analysis was carried out under both line and load regulation conditions. Numerical simulation and its verification results provided in this paper, prove the good agreement of the circuit with theoretical background.

  6. High performance dc-dc conversion with voltage multipliers. [using transformerless capacitor diode circuit

    Science.gov (United States)

    Harrigill, W. T., Jr.; Myers, I. T.

    1974-01-01

    An experimental 100W 1000V dc-dc converter using a capacitor diode voltage multipler (CDVM) with a nominal frequency of 100 kHz is studied. A component weight of about 1 kg/kW was obtained. Design equations for current, output -ripple and -power, efficiency and output voltage are derived. Agreement between experimental results and calculations is fairly good except for ripple.

  7. Comparative Performance Analysis of XOR-XNOR Function Based High-Speed CMOS Full Adder Circuits For Low Voltage VLSI Design

    Directory of Open Access Journals (Sweden)

    Sudarshan Tiwari

    2012-05-01

    Full Text Available This paper presents comparative study of high-speed, low-power and low voltage full adder circuits. Our approach is based on XOR-XNOR design full adder circuits in a single unit. A low power and high performance 9T full adder cell using a design style called “XOR (3T” is discussed. The designed circuit commands a high degree of regularity and symmetric higher density than the conventional CMOS design style as well as it lowers power consumption by using XOR (3T logic circuits. Gate Diffusion Input (GDI technique of low-power digital combinatorial circuit design is also described. This technique helps inreducing the power consumption and the area of digital circuits while maintaining low complexity of logic design. This paper analyses, evaluates and compares the performance of various adder circuits. Severalsimulations conducted using different voltage supplies, load capacitors and temperature variation demonstrate the superiority of the XOR (3T based full adder designs in term of delay, power and powerdelay product (PDP compared to the other full adder circuits. Simulation results illustrate the superiority of the designed adder circuits against the conventional CMOS, TG and Hybrid full adder circuits in terms of power, delay and power delay product (PDP.

  8. Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production

    Directory of Open Access Journals (Sweden)

    F. Urbain

    2014-01-01

    Full Text Available Hydrogenated amorphous silicon thin film tandem solar cells (a-Si:H/a-Si:H have been developed with focus on high open-circuit voltages for the direct application as photocathodes in photoelectrochemical water splitting devices. By temperature variation during deposition of the intrinsic a-Si:H absorber layers the band gap energy of a-Si:H absorber layers, correlating with the hydrogen content of the material, can be adjusted and combined in a way that a-Si:H/a-Si:H tandem solar cells provide open-circuit voltages up to 1.87 V. The applicability of the tandem solar cells as photocathodes was investigated in a photoelectrochemical cell (PEC measurement set-up. With platinum as a catalyst, the a-Si:H/a-Si:H based photocathodes exhibit a high photocurrent onset potential of 1.76 V versus the reversible hydrogen electrode (RHE and a photocurrent of 5.3 mA/cm2 at 0 V versus RHE (under halogen lamp illumination. Our results provide evidence that a direct application of thin film silicon based photocathodes fulfills the main thermodynamic requirements to generate hydrogen. Furthermore, the presented approach may provide an efficient and low-cost route to solar hydrogen production.

  9. Improving open-circuit voltage in DSSCs using Cu-doped TiO{sub 2} as a semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Navas, J.; Fernandez-Lorenzo, C.; Aguilar, T.; Alcantara, R.; Martin-Calleja, J. [Physical Chemistry Department, Science Faculty, University of Cadiz, Campus Universitario de Puerto Real, Cadiz (Spain)

    2012-02-15

    TiO{sub 2} doping has been widely used in photocatalysis and photovoltaic cells to improve the performance of this semiconductor. This paper studies the use of copper as a dopant in TiO{sub 2} in dye-sensitized solar cells (DSSC), analysing the effect on the photovoltaic properties of the cells of different concentrations of copper incorporated into the semiconductor. The copper-doped TiO{sub 2} semiconductor was characterized with several instrumental techniques, including X-ray diffraction (XRD), inductively coupled plasma atomic emission spectroscopy (ICP-AES), scanning transmission electron microscopy (STEM), and UV-Vis spectroscopy in order to know its structure, composition and band gap energies with different concentrations of the dopant. An analysis was also performed of the variations in open-circuit voltage depending on the concentration of copper. This showed that the presence of copper in DSSCs made with a standard configuration - using a ruthenium complex (N3) as a dye and the redox pair I{sup -}/I{sub 3}{sup -} as the electrolyte with 3-methoxypropionitrile as a solvent - leads to improvements of up to 10% in the open-circuit voltage of DSSCs. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. SEMICONDUCTOR INTEGRATED CIRCUITS A low-voltage sense amplifier for high-performance embedded flash memory

    Science.gov (United States)

    Jiang, Liu; Xueqiang, Wang; Qin, Wang; Dong, Wu; Zhigang, Zhang; Liyang, Pan; Ming, Liu

    2010-10-01

    This paper presents a sense amplifier scheme for low-voltage embedded flash (eFlash) memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current. The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process, and the sense time is 0.43 ns at 1.5 V, corresponding to a 46% improvement over the conventional technologies.

  11. Improving Transient Recovery voltage of circuit breaker using Fault Current Limiter

    Directory of Open Access Journals (Sweden)

    Amir Heidary

    2012-12-01

    Full Text Available This study investigates influence of Fault Current Limiter (FCL on short-circuits current level of substation bus bar splitter circuit breaker and its TRV. An approach for TRV evaluation is developed and applied for proposed power system as shown in this study. FCL circuit is connected to the power system in order to limit TRV. The limiter circuit consists of two equal windings which are turned around unique magnetic core. One of the windings is connected in series with the power system network and the other is connected to the network via series capacitor and power electronic switches. During normal operating condition, both tyristors are in on state and current of the primary and secondary windings are equal. This causes zero impedance of the limiter. During fault, faults current cause the power electronic switch to turn off which increases the limiter impedance. By increasing the limiter impedance, amplitude of TRV decreases substantially. The novel method presented in this study is a cheap and successful scheme.

  12. Approach for electrodynamic force for compensation in low voltage circuit breaker WP 630-1.2 type

    Institute of Scientific and Technical Information of China (English)

    LU Na; XU L.J.; Miedzi(n)ski B.

    2007-01-01

    Undesirable repulsive force between contact members due to both a current path shrink near a real contact area and/or so-called pinch effect is particularly onerous for power switch applications, and results in either contact floating or bouncing which are associated with an electric arc following contact welding. This problem is of great importance for any circuit breaker especially for compact low voltage vacuum circuit breakers. To avoid contact floating at closure and during any inrush current under short circuit conditions, the electrodynamic repulsive force can be employed successfully if we use a special compensation system flexibly combined with the contact itself. However to select and design the compensation system properly, its efficiency has to be known. This paper presents an approach to obtain the electrodynamic force value depending on different shaped (rectangular,square, circle and arch) copper plates used in the compensator by using ANSYS for current values 40 kA RMS. Curve-fitting was done according to the calculating results, the optimization designing of compensation unit is based on them.

  13. Fault Modeling and Testing for Analog Circuits in Complex Space Based on Supply Current and Output Voltage

    Directory of Open Access Journals (Sweden)

    Hongzhi Hu

    2015-01-01

    Full Text Available This paper deals with the modeling of fault for analog circuits. A two-dimensional (2D fault model is first proposed based on collaborative analysis of supply current and output voltage. This model is a family of circle loci on the complex plane, and it simplifies greatly the algorithms for test point selection and potential fault simulations, which are primary difficulties in fault diagnosis of analog circuits. Furthermore, in order to reduce the difficulty of fault location, an improved fault model in three-dimensional (3D complex space is proposed, which achieves a far better fault detection ratio (FDR against measurement error and parametric tolerance. To address the problem of fault masking in both 2D and 3D fault models, this paper proposes an effective design for testability (DFT method. By adding redundant bypassing-components in the circuit under test (CUT, this method achieves excellent fault isolation ratio (FIR in ambiguity group isolation. The efficacy of the proposed model and testing method is validated through experimental results provided in this paper.

  14. 电容降压式电路的设计原理%Design principle of capacitor-depressing-voltage circuit

    Institute of Scientific and Technical Information of China (English)

    杨海明; 杨国志; 李悦; 舒德泉

    2013-01-01

    Compared with the power transformer,capacitor-depressing-voltage circuit has a small size,economical and reliable power,high efficiency,so is often used.By analysis the circuit theory of capacitor-depressing-voltage DC power supply circuit under sinusoidal AC,this paper presented the three circuit schematic of capacitor-depressing-voltage DC power supply circuit,and summed up the conditions of use,component requirements,design parameters and notes about capacitor-depressing-voltage DC power supply circuit.%与电源变压器降压相比,电容降压具有电源体积小、经济、可靠、效率高等优点,所以常被使用.通过分析电容降压式直流电源电路在正弦交流电下的电路原理,给出三种电容降压式直流电源电路的原理图,并总结出设计电容降压式直流电源的使用条件、元器件要求、设计参数和注意事项.

  15. Complementary circuits based on solution processed low-voltage organic field-effect transistors

    NARCIS (Netherlands)

    Ball, James M.; Wöbkenberg, Paul H.; Kooistra, Floris B.; Hummelen, Jan C.; Leeuw, Dago M. de; Bradley, Donal D.C.; Anthopoulos, Thomas D.

    2009-01-01

    The field of organic electronics is advancing quickly towards ultra low-cost, low-end applications and is expected to provide the necessary technology required for flexible/printed electronics. Here we address the need for solution processed low-voltage complementary logic in order to reduce power c

  16. Robust Sequential Circuits Design Technique for Low Voltage and High Noise Scenarios

    Directory of Open Access Journals (Sweden)

    Garcia-Leyva Lancelot

    2016-01-01

    In this paper we introduce an innovative input and output data redundancy principle for sequential block circuits, the responsible to keep the state of the system, showing its efficiency in front of other robust technique approaches. The methodology is totally different from the Von Neumann approaches, because element are not replicated N times, but instead, they check the coherence of redundant input data no allowing data propagation in case of discrepancy. This mechanism does not require voting devices.

  17. Statistics of voltage drop in distribution circuits: a dynamic programming approach

    Energy Technology Data Exchange (ETDEWEB)

    Turitsyn, Konstantin S [Los Alamos National Laboratory

    2010-01-01

    We analyze a power distribution line with high penetration of distributed generation and strong variations of power consumption and generation levels. In the presence of uncertainty the statistical description of the system is required to assess the risks of power outages. In order to find the probability of exceeding the constraints for voltage levels we introduce the probability distribution of maximal voltage drop and propose an algorithm for finding this distribution. The algorithm is based on the assumption of random but statistically independent distribution of loads on buses. Linear complexity in the number of buses is achieved through the dynamic programming technique. We illustrate the performance of the algorithm by analyzing a simple 4-bus system with high variations of load levels.

  18. Transparent Pixel Circuit with Threshold Voltage Compensation Using ZnO Thin-Film Transistors for Active-Matrix Organic Light Emitting Diode Displays

    Science.gov (United States)

    Yang, Ik-Seok; Kwon, Oh-Kyong

    2009-03-01

    A transparent pixel circuit with a threshold voltage compensating scheme using ZnO thin-film transistors (TFTs) for active-matrix organic light emitting diode (AMOLED) displays is proposed. This circuit consists of five n-type ZnO TFTs and two capacitors and can compensate for the threshold voltage variation of ZnO TFTs in real time. From simulation results, the maximum deviation of the emission current of the pixel circuit with a threshold voltage variation of ±1 V is determined to be less than 10 nA. From measurement results, it is verified that the maximum deviation of measured emission currents with measurement position in a glass substrate is less than 15 nA in a higher current range, and the deviation of emission current with time is less than 3%.

  19. Note: Wide-range and high-resolution on-chip delay measurement circuit with low supply-voltage sensitivity for SoC applications

    Science.gov (United States)

    Sheng, Duo; Hung, Yu-Chan

    2016-11-01

    This paper presents an on-chip delay measurement (OCDM) circuit with a wide delay-measurement range, a high delay-measurement resolution and low supply-voltage sensitivity for efficient detection, and diagnosis in the high-performance system-on-chip (SoC). The proposed cascade-stage measurement structure can simultaneously achieve a delay-measurement range of several nanoseconds and a quantization resolution of several picoseconds. The proposed delay-measurement circuit has a high immunity to supply voltage variations without any additional calibration or self-biasing circuit. The delay-measurement range is 5.25 ns with 6 ps resolution; and the average delay resolution variation is 0.41% with ±10% supply voltage variations.

  20. Study of DC Circuit Breaker of H2-N2 Mixture Gas for High Voltage

    Science.gov (United States)

    Shiba, Yuji; Morishita, Yukinaga; Kaneko, Shuhei; Okabe, Shigemitsu; Mizoguchi, Hitoshi; Yanabu, Satoru

    Global warming caused by CO2 etc. is a field where the concern is very high. Especially, automobile emissions are problem for it. Therefore, the hybrid car is widely development and used recently. Hybrid car used electric power and gasoline. So, the car reduces CO2. Hybrid car has engine and motor. To rotate the motor, hybrid car has battery. This battery is large capacity. Therefore, the relay should interrupt high DC current for the switch of the motor and the engine. So, hybrid car used hydrogen gas filling relay We studied interruption test for the research of a basic characteristic of hydrogen gas. DC current has not current zero point. So, it is necessary to make the current zero by high arc voltage and forcible current zero point. The loss coefficient and arc voltage of hydrogen is high. Therefore, we studied interruption test for used high arc voltage. We studied interruption test and dielectric breakdown test of air, pure Hydrogen, and Hydrogen- nitrogen mixture gas. As a result, we realized H2-N2(80%-20%) is the best gas.

  1. Evidence of Gate Voltage Oscillations during Short Circuit of Commercial 1.7 kV/ 1 kA IGBT Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Wu, Rui; Iannuzzo, Francesco;

    2015-01-01

    This paper analyzes the evidence of critical gate voltage oscillations in 1.7 kV/1 kA Insulated-Gate Bipolar Transistor (IGBT) power modules under short circuit conditions. A 6 kA/1.1 kV Non-Destructive Test (NDT) set up for repeatable short circuit tests has been built with a 40 nH stray inducta...

  2. Evidence of Gate Voltage Oscillations during Short Circuit of Commercial 1.7 kV/ 1 kA IGBT Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Wu, Rui; Iannuzzo, Francesco

    2015-01-01

    This paper analyzes the evidence of critical gate voltage oscillations in 1.7 kV/1 kA Insulated-Gate Bipolar Transistor (IGBT) power modules under short circuit conditions. A 6 kA/1.1 kV Non-Destructive Test (NDT) set up for repeatable short circuit tests has been built with a 40 nH stray inducta...

  3. Enhanced Open-Circuit Voltage in Visible Quantum Dot Photovoltaics by Engineering of Carrier-Collecting Electrodes

    KAUST Repository

    Wang, Xihua

    2011-10-26

    Colloidal quantum dots (CQDs) enable multijunction solar cells using a single material programmed using the quantum size effect. Here we report the systematic engineering of 1.6 eV PbS CQD solar cells, optimal as the front cell responsible for visible-wavelength harvesting in tandem photovoltaics. We rationally optimize each of the device\\'s collecting electrodes-the heterointerface with electron-accepting TiO2 and the deep-work-function hole-collecting MoO3 for ohmic contact-for maximum efficiency. We report an open-circuit voltage of 0.70 V, the highest observed in a colloidal quantum dot solar cell operating at room temperature. We report an AM1.5 solar power conversion efficiency of 3.5%, the highest observed in >1.5 eV bandgap CQD PV device. © 2011 American Chemical Society.

  4. Three-dimensional modelling of electric-arc development in a low-voltage circuit-breaker

    Energy Technology Data Exchange (ETDEWEB)

    Piqueras, L.; Henry, D.; Jeandel, D.; Scott, J. [Laboratoire de Mecanique des Fluides et d' Acoustique, CNRS/Universite de Lyon, Ecole Centrale de Lyon/Universite Lyon 1/INSA de Lyon, ECL, 36 avenue Guy de Collongue, 69134 Ecully Cedex (France); Wild, J. [Schneider Electric, 37 quai Merlin, 38050 Grenoble Cedex 9 (France)

    2008-09-15

    This article describes direct numerical simulation of the first three milliseconds following ignition of the arc in a low-voltage circuit-breaker using a computational-fluid-dynamics code adapted for electric-arc modelling. The mobile electrode is allowed for by a moving mesh. The results describe the evolution of the arc with time in terms of its detailed electrical, thermal and fluid dynamic properties. They allow the identification of several phases during the overall arc development process studied here: arc initialisation in the widening electrode gap, arc-thermal expansion, displacement of the arc towards the tip of the mobile electrode, and the beginning of commutation to the fixed electrode. (author)

  5. The Cu{sub 2}ZnSnS{sub 4} solar cell with high open circuit voltage

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Min; Ma, Xun; Jiang, Zhi; Li, Zhishan; Liu, Sijia; Lu, Yilei; Wang, Shurong, E-mail: shrw88@aliyun.com

    2017-03-15

    In this paper, the effects of two different sulfurization processes on the CZTS films were investigated, and the results indicated that a rapid high-temperature crystallization process after sulfurization was beneficial for CZTS thin films to obtain a compact and flat surface with large grains. However, a common sulfurization without rapid high-temperature crystallization process would easily lead to undesirable properties of films, such as rough surface with pin holes, which degenerate the performance of devices. Cu{sub 2}ZnSnS{sub 4} (CZTS) solar cell based on a rapid high-temperature process after sulfurization achieved a high open circuit voltage of 722 mV and the best efficiency 3.32% was obtained.

  6. Numerical Analysis of the Arc Plasma in a Simplified Low-voltage Circuit Breaker Chamber with Ferromagnetic Materials

    Institute of Scientific and Technical Information of China (English)

    Wu Yi; Rong Mingzhe; Yang Qian; Hu Guangxia

    2005-01-01

    This paper is devoted to the simulation of the arc plasma in a simplified low-voltage circuit breaker chamber. Based on a group of coupled governing equations, a three-dimensional (3-D) arc plasma model is built and solved by a modified commercial code. Firstly, this paper presents a solution of the stationary state of the arc plasma and discusses the distribution of some parameters throughout the chamber. Secondly, with the ferromagnetic materials included,the balance of the stationary state is broken and a transient course is calculated. In light of the simulation results, the temperature distribution sequence, the arc motion and the plasma jet are then described and analyzed in detail.

  7. Characteristics of Overvoltage Protection with Cascade Application of Surge Protective Devices in Low-Voltage AC Power Circuits

    Directory of Open Access Journals (Sweden)

    RADULOVIC, V.

    2015-08-01

    Full Text Available Surge Protective Devices (SPDs are widely used for protection of the equipment in low-voltage AC power circuits against wide variety of surges. Cascade application of SPDs starting at the service entrance of a building and downstream toward near sensitive equipment is intended to ensure optimal energy distribution among installed SPDs, as well as proper equipment protection against surges. Characteristics of overvoltage protection with two-stage application of SPDs have been analyzed in the paper through performed measurements, followed by simulations and numerical modeling using the ATP/EMTP and MATLAB Simulink. Parametric analysis of the protection's characteristics in wide range of influencing factors has been performed in order to define a set of applicable solutions for proper selection and performance of SPDs.

  8. A Novel Thiophene Derivative-based Conjugated Polymer for Polymer Solar Cells with High Open-circuit Voltage

    Institute of Scientific and Technical Information of China (English)

    谌烈; 沈星星; 陈义旺

    2012-01-01

    A novel D-A alternative conjugated polymer PBDTDMCT containing benzo[1,2-b:4,5-b']dithiophene (BDT) and dimethyl thiophene-3,4-dicarboxylate (DMCT), was designed and synthesized by Stille cross-coupling reaction. The copolymer exhibited excellent solubility and good thermal stability. The optical band gap determined from the onset of absorption of the polymer film was 2.10 eV. By incorporation of the ester groups into the polymer side chain, the HOMO level of polymer PBDTDMT was tuned to be deep-lying (--5.65 eV). Open-circuit voltage of polymer solar cells constructed based on PBDTDMT and [6,6]-phenyl-CTwbutyric acid methyl ester (PCTIBM) can be tuned to achieve values as high as ca. 1.0 V.

  9. Current regulators for I/SUP 2/L circuits to be operated from low-voltage power supplies

    DEFF Research Database (Denmark)

    Bruun, Erik; Hansen, Ole

    1980-01-01

    A new bandgap current reference is described which can be used to control the injector current of I/SUP 2/L circuits for supply voltages down to about 1 V. For small currents the total injector current is obtained as a mirror of the reference current. For large injector currents the current control...... is performed by a series regulator which compares the injector current of one I/SUP 2/L gate to the reference current. The described reference current can be adjusted to give a variation with temperature of about 60 ppm/°C over the temperature range -10 to +70°C. However, in some applications a nonzero......, but well controlled temperature coefficient is desired. It is shown how a temperature stable ring oscillator with I/SUP 2/L gates can be constructed by tailoring the temperature dependence of the supply current appropriately....

  10. Simulation of current-voltage curves for inverted planar structure perovskite solar cells using equivalent circuit model with inductance

    Science.gov (United States)

    Cojocaru, Ludmila; Uchida, Satoshi; Jayaweera, Piyankarage V. V.; Kaneko, Shoji; Toyoshima, Yasutake; Nakazaki, Jotaro; Kubo, Takaya; Segawa, Hiroshi

    2017-02-01

    Physical modeling of hysteretic behavior in current-voltage (I-V) curves of perovskite solar cells (PSCs) is necessary for further improving their power conversion efficiencies (PCEs). The reduction of hysteresis in inverted planar structure PSCs (p-PSCs) has been achieved by using a [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) layer. In the cases, the opposite trend of the I-V hysteresis has been observed where the forward scan shows slightly higher efficiency than the reverse scan. In this paper, an equivalent circuit model with inductance is proposed. This model consists of a Schottky diode involving a parasitic inductance focusing PCBM/Al(Ca) interface and accurately represents the opposite trend of the I-V hysteresis of the p-PSC with an inverted structure.

  11. 一种间接测量电压互感器二次回路电压降的方法%A Method for Indirectly Measuring Voltage Transformer Secondary Circuit Voltage Drop

    Institute of Scientific and Technical Information of China (English)

    李固; 李纯坚; 傅子明; 刘芬; 梁旭常; 严杰峰

    2014-01-01

    通过研究电压互感器(voltage transformer,VT)二次回路电压降的主要来源,分析 VT二次回路阻抗的构成和运行特性,发现接触电阻是导致 VT二次回路电压降变化的主要原因。当计量电压二次回路阻抗为确定值时,VT二次负荷和 VT二次回路压降存在着对应的关系,可以通过测量二次负荷值来了解二次回路阻抗值,进而推算 VT二次回路压降值。基于此,推导出了用 VT二次负荷计算出 VT二次回路电压降的公式,并提出了通过分析对比 VT二次回路负荷变化大小及趋势,来对 VT二次回路压降开展技术监督的工作方法。%By means of studying main source of voltage drop of voltage transformer secondary circuit,this paper analyzes constitution and running characteristic of VT secondary circuit and discovers the main reason is contact resistance. When im-pedance of metering voltage secondary circuit was a determined value,there was corresponding relationship between VT sec-ondary load and voltage drop and it was able to learn impedance value of the secondary circuit by measuring secondary load value and calculate voltage drop value of VT secondary circuit. A calculation formula for voltage drop value of VT secondary circuit was deduced by VT secondary load and a working method for developing technical supervision on voltage drop of VT secondary circuit was proposed by analyzing and comparing changes and trends of VT secondary load.

  12. Microstructural and Electronic Origins of Open-Circuit Voltage Tuning in Organic Solar Cells Based on Ternary Blends

    KAUST Repository

    Mollinger, Sonya A.

    2015-09-22

    © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Organic ternary heterojunction photovoltaic blends are sometimes observed to undergo a gradual evolution in open-circuit voltage (Voc) with increasing amounts of a second donor or an acceptor. The Voc is strongly correlated with the energy of the charge transfer state in the blend, but this value depends on both local and mesoscopic orders. In this work, the behavior of Voc in the presence of a wide range of interfacial electronic states is investigated. The key charge transfer state interfaces responsible for Voc in several model systems with varying morphology are identified. Systems consisting of one donor with two fullerene molecules and of one acceptor with a donor polymer of varying regio-regularity are used. The effects from the changing energetic disorder in the material and from the variation due to a law of simple mixtures are quantified. It has been found that populating the higher-energy charge transfer states is not responsible for the observed change in Voc upon the addition of a third component. Aggregating polymers and miscible fullerenes are compared, and it has been concluded that in both cases charge delocalization, aggregation, and local polarization effects shift the lowest-energy charge transfer state distribution. The open-circuit voltage evolution and charge transfer state interfaces in ternary organic photovoltaic blends are investigated using several model systems. The changes in subgap spectra from energetic disorder and increased population of higher energy states are analyzed and the lowest charge transfer state distribution is observed to shift due to local aggregation and delocalization effects.

  13. Simulation of the Arc Behavior in Puffer-type High Voltage Circuit Breaker Considering the Influence of Nozzle Ablation

    Institute of Scientific and Technical Information of China (English)

    JIANG Xu; ZHONG Jianying; ZHANG Youpeng; ZHANG Gaochao; LI Xingwen; JIA Shenli

    2013-01-01

    In order to investigate the influence of nozzle ablation to arc,a 2 D axisymmetric magneto-hydro-dynamics arc model is developed to simulate the arc behavior during the whole interruption process in a puffer type high voltage circuit breaker,considering the nozzle ablating and the mixing process of Polytetrafluoroethylene(PTFE) vapor with SF6.The results show that the arc radius firstly increases and then decreases as arc current varies according to its sinusoida waveform.At 3.5 ms after arc initiation the nozzle ablation starts,and 2.5 ms later the current nearly reaches its peak value and nozzle ablation develops intensely.Meanwhile the nozzle is blocked by arc at this time and consequently the vapor concentration in nozzle reaches the highest.Then while the current decreasing and open distance increaseing the vapor concentration gradually decreases.Before current zero the extinction peak of arc voltage occurs.It indicates that the PTFE vapor enhances pressure rise in arc quenching chamber and strengthens the arc blocking effect on nozzle; the arc radius is wider and arc temperature is lower when nozzle ablation is considered.

  14. Technical-economic evaluation of the utilization of closing resistor in CEMIG extra-high voltage circuit breakers

    Energy Technology Data Exchange (ETDEWEB)

    Rocha, Angelica C.O.; Pinto, Roberto del Giudice R.; Teixeira, Jose Cleber; Fonseca, Rodrigo Assuncao; F. Junior, Sebastiao V. [Companhia Energetica de Minas Gerais (CEMIG), Belo Horizonte, MG (Brazil)

    1994-12-31

    This paper presents the technical and economic studies performed by CEMIG, Companhia Energetica de Minas Gerais, Brazil, concerning the use of closing resistor in its extra-high voltage (EHV) breakers. The analysis emphasizes the advantages which could be achieved with the elimination of the resistor as far as costs and reliability are concerned. This evaluation was motivated by two 500 kV breaker failures resulting from the breakdown of the closing resistor operation mechanism. These occurrences resulted in operative restriction for CEMIG EHV system. The analysis demanded a review of the capability criteria of silicon carbide (Si C) gap arresters, which are still greatly used in CEMIG EHV System, and of the procedures to be applied when carrying out the transient studies. The investigation resulted in the prompt removal of closing resistors from circuit breakers in CEMIG extra-high voltage system generating an economy of approximately U$ 840,00 and an improvement in safety and system reliability. (author) 13 refs., 4 figs., 1 tab.

  15. Recombination in polymer:Fullerene solar cells with open-circuit voltages approaching and exceeding 1.0 V

    KAUST Repository

    Hoke, Eric T.

    2012-09-14

    Polymer:fullerene solar cells are demonstrated with power conversion efficiencies over 7% with blends of PBDTTPD and PC 61 BM. These devices achieve open-circuit voltages ( V oc ) of 0.945 V and internal quantum efficiencies of 88%, making them an ideal candidate for the large bandgap junction in tandem solar cells. V oc \\'s above 1.0 V are obtained when the polymer is blended with multiadduct fullerenes; however, the photocurrent and fill factor are greatly reduced. In PBDTTPD blends with multiadduct fullerene ICBA, fullerene emission is observed in the photoluminescence and electroluminescence spectra, indicating that excitons are recombining on ICBA. Voltage-dependent, steady state and time-resolved photoluminescence measurements indicate that energy transfer occurs from PBDTTPD to ICBA and that back hole transfer from ICBA to PBDTTPD is inefficient. By analyzing the absorption and emission spectra from fullerene and charge transfer excitons, we estimate a driving free energy of -0.14 ± 0.06 eV is required for efficient hole transfer. These results suggest that the driving force for hole transfer may be too small for efficient current generation in polymer:fullerene solar cells with V oc values above 1.0 V and that non-fullerene acceptor materials with large optical gaps ( > 1.7 eV) may be required to achieve both near unity internal quantum efficiencies and values of V oc exceeding 1.0 V. © 2013 WILEY-VCH Verlag GmbH and Co.

  16. New Breakdown Electric Field Calculation for SF6 High Voltage Circuit Breaker Applications

    Institute of Scientific and Technical Information of China (English)

    Ph.ROBIN-JOUAN; M.YOUSFI

    2007-01-01

    The critical electric fields of hot SF6 are calculated including both electron and ion kinetics in wide ranges of temperature and pressure,namely from 300 K up to 4000 K and 2 atmospheres up to 32 atmospheres respectively.Based on solving a multi-term electron Boltzmann equation the calculations use improved electron-gas collision cross sections for twelve SF6 dissociation products with a particular emphasis on the electron-vibrating molecule interactions.The ion kinetics is also considered and its role on the critical field becomes non negligible as the temperature is above 2000 K.These critical fields are then used in hydrodynamics simulations which correctly predict the circuit breaker behaviours observed in the case of breaking tests.

  17. A new ROIC with high-voltage protection circuit of HgCdTe e-APD FPA for passive and active imaging

    Science.gov (United States)

    Chen, Guoqiang; Zhang, Junling; Wang, Pan; Zhou, Jie; Gao, Lei; Ding, Ruijun

    2012-12-01

    HgCdTe electrons initiated avalanche photodiodes (e-APDs) in linear multiplication mode can be used for high speed applications such as active imaging. A readout integrated circuit of e-APD FPA is designed for dual mode passive/active imaging system. Unit cell circuit architecture of ROIC includes a high voltage protection module, a Sample-Hold circuit module, a comparator, output driver stage and a integrator module which includes a amplifier and three capacitors. Generally, APD FPA works at reversed bias such as 5V-15V in active imaging mode, and pixels' dark currents increase exponentially as the reverse-bias voltage is increased. Some cells of ROIC may be short to high voltage because of avalanche breakdown of diodes. If there is no protection circuit, the whole ROIC would be burnt out. Thus a protection circuit module introduced in every ROIC cell circuit is necessary to make sure the rest units of ROIC can still work. Conventional 5V CMOS process is applied to implement the high voltage protection with the small area other than LDMOS in high voltage BCD process in the limited 100μm×100μm pitch area. In integrator module, three integration capacitors are included in the ROIC to provide switchable well capacity. One of them can be shared in two modes in order to save area. Constraints such as pixel area and power lead us design toward a simple one-stage cascade operational transconductance amplifier (OTA) as pre-amplifier which can avoid potential instability caused by inaccuracy of MOSFET Model at 77K.

  18. Energy from CO2 using capacitive electrodes--theoretical outline and calculation of open circuit voltage.

    Science.gov (United States)

    Paz-Garcia, J M; Schaetzle, O; Biesheuvel, P M; Hamelers, H V M

    2014-03-15

    Recently, a new technology has been proposed for the utilization of energy from CO2 emissions (Hamelers et al., 2014). The principle consists of controlling the dilution process of CO2-concentrated gas (e.g., exhaust gas) into CO2-dilute gas (e.g., air) thereby extracting a fraction of the released mixing energy. In this paper, we describe the theoretical fundamentals of this technology when using a pair of charge-selective capacitive electrodes. We focus on the behavior of the chemical system consisting of CO2 gas dissolved in water or monoethanolamine solution. The maximum voltage given for the capacitive cell is theoretically calculated, based on the membrane potential. The different aspects that affect this theoretical maximum value are discussed.

  19. Improvement and test of high power amplifier high voltage interlock circuit%高功放高压联锁电路改进与测试

    Institute of Scientific and Technical Information of China (English)

    金华松; 邱冬冬; 刘斯亮

    2012-01-01

    Whether the device can work regularly was determined by the performance of high voltage interlock directly. Through the operating principle analysis of high voltage interlock circuit and AC time delayer of high power amplifier based on CPI mechanical cabinet, an improved high voltage interlock circuit solution and a test method applied in AC time delayer are studied. The improved interlock circuit overcomes the drawbacks of original high voltage interlock solution. The designed test circuit can carry out quantitative test of AC time delayer parameters.%高压联锁性能的好坏直接影响设备能否正常工作.通过分析CPI高功放(HPA)的延时加高压程序、高压联锁电路和交流延时器工作原理,研究出一种新改选的高压联锁电路方案和用于交流延时器的测试方法.分析阐述表明,该方案和测试方法克服了CPI高功放的高压联锁方案的弊端.另外,根据分析结果设计了延时测试电路,它可对交流延时器性能参数进行定量测试.

  20. Formation of a p-n heterojunction on GaP photocathodes for H-2 production providing an open-circuit voltage of 710 mV

    DEFF Research Database (Denmark)

    Malizia, Mauro; Seger, Brian; Chorkendorff, Ib

    2014-01-01

    Photocatalytic water splitting for the sustainable production of hydrogen using a two-photon tandem device requires careful optimization of the semiconductors used as photon absorbers. In this work we show how the open-circuit voltage of photocathodes for the hydrogen evolution reaction based on ...

  1. Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application

    NARCIS (Netherlands)

    Tripathi, A.K.; Smits, E.C.P.; Putten, J.B.P.H. van der; Neer, M. van; Myny, K.; Nag, M.; Steudel, S.; Vicca, P.; O'Neill, K.; Veenendaal, E. van; Genoe, G.; Heremans, P.; Gelinck, G.H.

    2011-01-01

    In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 µm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The

  2. 低压断路器的选型与应用%Selection and Application of Low-Voltage Circuit Breaker

    Institute of Scientific and Technical Information of China (English)

    钱金川; 贾文军

    2011-01-01

    介绍了低压断路器在配电线路、家用及类似场所负载、电动机负载的选型方法,并分析了在断路器保护功能以及不同负载特性情况下的选型策略。通过对低压断路器的合理选型,使低压断路器达到最佳的保护状态,并避免了因断路器选型不当及安装不合理而造成的安全隐患。%Introduction was made to a low-voltage circuit breaker type selection method in distribution line, household use, similar sites load and motor loads. Analysis was made to type selection strategy under circuit breaker protection function and different load characteristics conditions. Reasonable type selection of low-voltage circuit breakers enables low-voltage circuit breakers to reach optimal protection status, so as to avoid safety dangers caused by unsuitable circuit breaker type selection and unreasonable installation.

  3. Analysis and simulation of the three-phase AC voltage regulation circuit%三相交流调压电路的分析与仿真

    Institute of Scientific and Technical Information of China (English)

    李衍孜

    2012-01-01

    Based on the analysis of the operation principle and mode of the single-phase AC voltage-regulation circuit, the voltage-regulating rule and effect of three-phase AC voltage-regulation was studied deeply in the paper. The theory of the three-phase star-style AC voltage-regulation circuit was tested in matlab/simulink, the simulation result proved the analysis of the theory of the three-phase AC voltage-regulation circuit was correct.%在分析单相交流调压电路运行原理和工作方式的基础上,深入研究了三相交流调压电路的调压规律和调压效果,并在Matlab/simulink仿真平台上对三相星形无中线交流调压电路的理论部分进行了验证,结果表明:三相交流调压电路的分析是正确的.

  4. Current Matching in Multifold DBP/C70 Organic Solar Cells With Open-Circuit Voltages of up to 6.44 V

    DEFF Research Database (Denmark)

    Ahmadpour, Mehrad; Liu, Yiming; Rubahn, Horst-Günter

    2017-01-01

    In this paper, we demonstrate a novel method for achieving high open-circuit voltages (Voc) in organic solar cells based on tetraphenyldibenzoperiflanthen (DBP) as donor and fullerene (C70) as acceptor molecules, by fabrication of multifold bilayer single cells stacked on top of each other....... As devices based on the material combination of DBP and C70 show relatively high open-circuit voltages of 0.87 V for single junction cells, and as both materials show broad absorption in the visible region pronounced peaks, they become ideal candidates as active layer materials in tandem stacked solar cells......, we demonstrate that the efficiency of these novel devices can be improved from 3.1% to 4.4% (best performing devices) in the case of a fivefold device structure, mainly due to the strong increase in the short-circuit current density, and thus lead to efficient small molecule-based solar cells high...

  5. A class of analog CMOS circuits based on the square-law characteristic of an MOS transistor in saturation

    NARCIS (Netherlands)

    Bult, Klaas; Wallinga, Hans

    1979-01-01

    The examined class of circuits includes voltage multipliers, current multipliers, linear V-I convertors, linear I-V convertors, current squaring circuits, and current divider circuits. Typical for these circuits is an independent control of the sum as well as the difference between two gate-source v

  6. Recombination dynamics as a key determinant of open circuit voltage in organic bulk heterojunction solar cells: a comparison of four different donor polymers

    Energy Technology Data Exchange (ETDEWEB)

    Maurano, Andrea; Hamilton, Rick; Shuttle, Chris G.; O' Regan, Brian; Zhang, Weimin; McCulloch, Iain; Durrant, James R. [Departments of Chemistry, Imperial College London, South Kensington SW7 2AZ (United Kingdom); Ballantyne, Amy M.; Nelson, Jenny [Departments of Physics, Imperial College London, South Kensington SW7 2AZ (United Kingdom); Azimi, Hamed [Konarka Austria, Altenbergerstrasse 69, A-4040 Linz (Austria); Christian Doppler Laboratory for Surface Optics, Johannes Kepler University, Linz (Austria); Morana, Mauro; Brabec, Christoph J. [Konarka Austria, Altenbergerstrasse 69, A-4040 Linz (Austria)

    2010-11-24

    Transient photovoltage and charge extraction analyses are employed to analyzes charge carrier densities and bimolecular recombination dynamics in organic polymer: fullerene solar cells under open circuit operating conditions, employing four different donor polymers. An equation is derived which allows us to calculate the device V{sub OC} from these kinetic measurements. This equation allows us to calculate voltage output of devices within {+-} 25 meV of directly measured values. This analysis thus allows us to relate device open circuit voltage directly to the kinetics of bimolecular recombination, and thereby the influence of nanomorphology upon device voltage output. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. CH3 NH3 PbBr3 -CH3 NH3 PbI3 Perovskite-Perovskite Tandem Solar Cells with Exceeding 2.2 V Open Circuit Voltage.

    Science.gov (United States)

    Heo, Jin Hyuck; Im, Sang Hyuk

    2016-07-01

    Perovskite-perovskite tandem solar cells with open-circuit voltages of over 2.2 V are reported. These cost-effective, solution-processible perovskite hybrid tandem solar cells with high open-circuit voltages are fabricated by the simple lamination of a front planar MAPbBr3 perovskite cell and a back MAPbI3 planar perovskite solar cell.

  8. High-voltage integrated active quenching circuit for single photon count rate up to 80 Mcounts/s.

    Science.gov (United States)

    Acconcia, Giulia; Rech, Ivan; Gulinatti, Angelo; Ghioni, Massimo

    2016-08-01

    Single photon avalanche diodes (SPADs) have been subject to a fast improvement in recent years. In particular, custom technologies specifically developed to fabricate SPAD devices give the designer the freedom to pursue the best detector performance required by applications. A significant breakthrough in this field is represented by the recent introduction of a red enhanced SPAD (RE-SPAD) technology, capable of attaining a good photon detection efficiency in the near infrared range (e.g. 40% at a wavelength of 800 nm) while maintaining a remarkable timing resolution of about 100ps full width at half maximum. Being planar, the RE-SPAD custom technology opened the way to the development of SPAD arrays particularly suited for demanding applications in the field of life sciences. However, to achieve such excellent performance custom SPAD detectors must be operated with an external active quenching circuit (AQC) designed on purpose. Next steps toward the development of compact and practical multichannel systems will require a new generation of monolithically integrated AQC arrays. In this paper we present a new, fully integrated AQC fabricated in a high-voltage 0.18 µm CMOS technology able to provide quenching pulses up to 50 Volts with fast leading and trailing edges. Although specifically designed for optimal operation of RE-SPAD devices, the new AQC is quite versatile: it can be used with any SPAD detector, regardless its fabrication technology, reaching remarkable count rates up to 80 Mcounts/s and generating a photon detection pulse with a timing jitter as low as 119 ps full width at half maximum. The compact design of our circuit has been specifically laid out to make this IC a suitable building block for monolithically integrated AQC arrays.

  9. Realizing Small Energy Loss of 0.55 eV, High Open-Circuit Voltage >1 V and High Efficiency >10% in Fullerene-Free Polymer Solar Cells via Energy Driver.

    Science.gov (United States)

    Cheng, Pei; Zhang, Mingyu; Lau, Tsz-Ki; Wu, Yao; Jia, Boyu; Wang, Jiayu; Yan, Cenqi; Qin, Meng; Lu, Xinhui; Zhan, Xiaowei

    2017-03-01

    A new, easy, and efficient approach is reported to enhance the driving force for charge transfer, break tradeoff between open-circuit voltage and short-circuit current, and simultaneously achieve very small energy loss (0.55 eV), very high open-circuit voltage (>1 V), and very high efficiency (>10%) in fullerene-free organic solar cells via an energy driver.

  10. Model parameter estimation approach based on incremental analysis for lithium-ion batteries without using open circuit voltage

    Science.gov (United States)

    Wu, Hongjie; Yuan, Shifei; Zhang, Xi; Yin, Chengliang; Ma, Xuerui

    2015-08-01

    To improve the suitability of lithium-ion battery model under varying scenarios, such as fluctuating temperature and SoC variation, dynamic model with parameters updated realtime should be developed. In this paper, an incremental analysis-based auto regressive exogenous (I-ARX) modeling method is proposed to eliminate the modeling error caused by the OCV effect and improve the accuracy of parameter estimation. Then, its numerical stability, modeling error, and parametric sensitivity are analyzed at different sampling rates (0.02, 0.1, 0.5 and 1 s). To identify the model parameters recursively, a bias-correction recursive least squares (CRLS) algorithm is applied. Finally, the pseudo random binary sequence (PRBS) and urban dynamic driving sequences (UDDSs) profiles are performed to verify the realtime performance and robustness of the newly proposed model and algorithm. Different sampling rates (1 Hz and 10 Hz) and multiple temperature points (5, 25, and 45 °C) are covered in our experiments. The experimental and simulation results indicate that the proposed I-ARX model can present high accuracy and suitability for parameter identification without using open circuit voltage.

  11. Open-circuit voltage deficit, radiative sub-bandgap states, and prospects in quantum dot solar cells.

    Science.gov (United States)

    Chuang, Chia-Hao Marcus; Maurano, Andrea; Brandt, Riley E; Hwang, Gyu Weon; Jean, Joel; Buonassisi, Tonio; Bulović, Vladimir; Bawendi, Moungi G

    2015-05-13

    Quantum dot photovoltaics (QDPV) offer the potential for low-cost solar cells. To develop strategies for continued improvement in QDPVs, a better understanding of the factors that limit their performance is essential. Here, we study carrier recombination processes that limit the power conversion efficiency of PbS QDPVs. We demonstrate the presence of radiative sub-bandgap states and sub-bandgap state filling in operating devices by using photoluminescence (PL) and electroluminescence (EL) spectroscopy. These sub-bandgap states are most likely the origin of the high open-circuit-voltage (VOC) deficit and relatively limited carrier collection that have thus far been observed in QDPVs. Combining these results with our perspectives on recent progress in QDPV, we conclude that eliminating sub-bandgap states in PbS QD films has the potential to show a greater gain than may be attainable by optimization of interfaces between QDs and other materials. We suggest possible future directions that could guide the design of high-performance QDPVs.

  12. Unraveling the High Open Circuit Voltage and High Performance of Integrated Perovskite/Organic Bulk-Heterojunction Solar Cells.

    Science.gov (United States)

    Dong, Shiqi; Liu, Yongsheng; Hong, Ziruo; Yao, Enping; Sun, Pengyu; Meng, Lei; Lin, Yuze; Huang, Jinsong; Li, Gang; Yang, Yang

    2017-08-09

    We have demonstrated high-performance integrated perovskite/bulk-heterojunction (BHJ) solar cells due to the low carrier recombination velocity, high open circuit voltage (VOC), and increased light absorption ability in near-infrared (NIR) region of integrated devices. In particular, we find that the VOC of the integrated devices is dominated by (or pinned to) the perovskite cells, not the organic photovoltaic cells. A Quasi-Fermi Level Pinning Model was proposed to understand the working mechanism and the origin of the VOC of the integrated perovskite/BHJ solar cell, which following that of the perovskite solar cell and is much higher than that of the low bandgap polymer based organic BHJ solar cell. Evidence for the model was enhanced by examining the charge carrier behavior and photovoltaic behavior of the integrated devices under illumination of monochromatic light-emitting diodes at different characteristic wavelength. This finding shall pave an interesting possibility for integrated photovoltaic devices to harvest low energy photons in NIR region and further improve the current density without sacrificing VOC, thus providing new opportunities and significant implications for future industry applications of this kind of integrated solar cells.

  13. Study of the Contributions of Donor and Acceptor Photoexcitations to Open Circuit Voltage in Bulk Heterojunction Organic Solar Cells

    Directory of Open Access Journals (Sweden)

    Douglas Yeboah

    2017-10-01

    Full Text Available One of the key parameters in determining the power conversion efficiency (PCE of bulk heterojunction (BHJ organic solar cells (OSCs is the open circuit voltage . The processes of exciting the donor and acceptor materials individually in a BHJ OSC are investigated and are found to produce two different expressions for . Using the contributions of electron and hole quasi-Fermi levels and charge carrier concentrations, the two different expressions are derived as functions of the energetics of the donor and acceptor materials and the photo-generated charge carrier concentrations, and calculated for a set of donor-acceptor blends. The simultaneous excitation of both the donor and acceptor materials is also considered and the corresponding , which is different from the above two, is derived. The calculated from the photoexcitation of the donor is found to be somewhat comparable with that obtained from the photoexcitation of the acceptor in most combinations of the donor and acceptor materials considered here. It is also found that the calculated from the simultaneous excitations of donor and acceptor in BHJ OSCs is also comparable with the other two . All three thus derived produce similar results and agree reasonably well with the measured values. All three depend linearly on the concentration of the photoexcited charge carriers and hence incident light intensity, which agrees with experimental results. The outcomes of this study are expected to help in finding materials that may produce higher and hence enhanced PCE in BHJ OSCs.

  14. Using of capacitors for improving the electric power quality in the low voltage circuits; Utilizacao de capacitores para melhoria da qualidade de energia eletrica nos circuitos de baixa tensao

    Energy Technology Data Exchange (ETDEWEB)

    Fassheber Junior, Carlos Frederico [Centrais Eletricas de Santa Catarina (CELESC), Florianopolis, SC (Brazil)]. E-mail: cffassheber@celesc.com.br

    2000-07-01

    The paper discuss the application of a bank of low voltage capacitors which can provide reduction in the loading of the low voltage circuits and in the transformers, more regulation of the voltage, improvement in the power factor, besides the fact of they are natural harmonic filters.

  15. Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Blalock, Benjamin J [ORNL; Islam, Syed K [ORNL

    2010-01-01

    Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8--m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

  16. 大容量发电机出口断路器选择%Circuit Breakers Selection Method for Large-capacity AC High-voltage Generator

    Institute of Scientific and Technical Information of China (English)

    张爽

    2011-01-01

    针对大容量发电机出口断路器的选择问题,依据GB/T 14824-2008、IEEE Std C37.013-1997和IEC 60909-0-2001中的计算方法,并结合发电机出口断路器型式试验报告的有关数据,以某百万千瓦级发电机组为例进行了比较计算,分析计算结果,提出了对发电机出口短路器短路电流开断能力不能采用百分比而应采用绝对值进行校验.%For selecting large-capacity AC high-voltage generator circuit breakers in a large generator system, comparative calculations are conducted for a million kilowatts rated generator following the standards of GB/T 14824-2008, IEEE Std C37.013-1997 and IEC 60909-0-2001. The calculation results and the test reports of generator circuit breakers are analyzed, and a suggestion is hence offered that absolute value of short-circuit current should be used for examining the short-circuit current breaking capacity of an AC high-voltage generator circuit breaker instead of percentage value.

  17. Improvement of energy storage motor control circuit of hydraulic actuator in high-voltage circuit breakers%高压断路器液压操动机构储能电机控制回路改进

    Institute of Scientific and Technical Information of China (English)

    张全民; 赵玉柱

    2011-01-01

    高压断路器液压操动机构的常见故障是储能电机频繁启动。通过合理地设计储能电机的控制回路,减少了液压机构频繁启动的现象。%The fault of the mechanism of High voltage circuit-breaker is motor of storaging power high frequency starup.That rationally design control circuit of hydraulic mechanism reduce the fault that motor of storaging power high frequency starup.

  18. Lattice-matched Cu2ZnSnS4/CeO2 solar cell with open circuit voltage boost

    DEFF Research Database (Denmark)

    Crovetto, Andrea; Yan, Chang; Iandolo, Beniamino

    2016-01-01

    We report a reproducible enhancement of the open circuit voltage in Cu2ZnSnS4 solar cells by introduction of a very thin CeO2 interlayer between the Cu2ZnSnS4 absorber and the conventional CdS buffer. CeO2, a non-toxic earth-abundant compound, has a nearly optimal band alignment with Cu2ZnSnS4...... and the two materials are lattice-matched within 0.4%. This makes it possible to achieve an epitaxial interface when growing CeO2 by chemical bath deposition at temperatures as low as 50 °C. The open circuit voltage improvement is then attributed to a decrease in the interface recombination rate through...

  19. Lattice-matched Cu2ZnSnS4/CeO2 solar cell with open circuit voltage boost

    Science.gov (United States)

    Crovetto, Andrea; Yan, Chang; Iandolo, Beniamino; Zhou, Fangzhou; Stride, John; Schou, Jørgen; Hao, Xiaojing; Hansen, Ole

    2016-12-01

    We report a reproducible enhancement of the open circuit voltage in Cu2ZnSnS4 solar cells by introduction of a very thin CeO2 interlayer between the Cu2ZnSnS4 absorber and the conventional CdS buffer. CeO2, a non-toxic earth-abundant compound, has a nearly optimal band alignment with Cu2ZnSnS4 and the two materials are lattice-matched within 0.4%. This makes it possible to achieve an epitaxial interface when growing CeO2 by chemical bath deposition at temperatures as low as 50 °C. The open circuit voltage improvement is then attributed to a decrease in the interface recombination rate through formation of a high-quality heterointerface.

  20. Design of a Sample and Hold Circuit using Rail to Rail Low Voltage Compact Operational Amplifier and bootstrap Switching

    Directory of Open Access Journals (Sweden)

    Annu Saini

    2014-09-01

    Full Text Available This paper presents a low power high performance and higher sampling speed sample and hold circuit. The proposed circuit is designed at 180 nm technology and has high linearity. The circuit can be used for the ADC frontend applications and supports double sampling architecture. The proposed sample and hold circuit has common mode range beyond rail to rail and uses two differential pairs transistor stages connected in parallel as its input stage.

  1. Correlation Between the Raman Crystallinity of p-Type Micro-Crystalline Silicon Layer and Open Circuit Voltage of n-i-p Solar Cells.

    Science.gov (United States)

    Jung, Junhee; Kim, Sunbo; Park, Jinjoo; Shin, Chonghoon; Pham, Duy Phong; Kim, Jiwoong; Chung, Sungyoun; Lee, Youngseok; Yi, Junsin

    2015-10-01

    This article mainly discusses the difference between p-i-n and n-i-p type solar cells. Their structural difference has an effect on cell performance, such as open circuit voltage and fill factor. Although the deposition conditions are the same for both p-i-n and n-i-p cases, the substrate layers for depositing p-type microcrystalline silicon layers differ. In n-i-p cells, the substrate layer is p-type amorphous silicon oxide layer; whereas, in p-i-n cells, the substrate layer is ZnO:Al. The interfacial change leads to a 12% difference in the crystallinity of the p-type microcrystalline silicon layers. When the p-type microcrystalline silicon layer's crystallinity was not sufficient to activate an internal electric field, the open circuit voltage and fill factor decreased 0.075 V and 7.36%, respectively. We analyzed this problem by comparing the Raman spectra, electrical conductivity, activation energy and solar cell performance. By adjusting the thickness of the p-type microcrystalline silicon layer, we increased the open circuit voltage of the n-i-p cell from 0.835 to 0.91 V.

  2. 空间辐射探测器滤波电路的设计%Design of Filter Circuit in High Voltage Unit of Particle Detector

    Institute of Scientific and Technical Information of China (English)

    施伟红; 于向前; 陈鸿飞; 邹鸿; 邹积清; 刘建文; 崔战国; 邵思霈

    2012-01-01

    To meet high stability, low ripple requirements of High Voltage Unit in Particle radiation detectors, to design a hybrid LC and RC filter circuit to reduce power supply ripple. Through the theoretical analysis, Pspice simulation and test,the results are verified. According to this design,a High Voltage Unit was made in a high -energy particle detector on a Satelite, output voltage ripple coefficient is small, met the design purposes. Test proved that this circuit design, simple, efficient, can provide a reference for this kind of circuit design.%为满足粒子辐射探测器高压电源高稳定、低纹波的要求,设计一种LC和RC混合滤波电路来降低电源纹波,并进行理论分析、PSpice仿真和试验对结果进行验证.按照这种设计实现的某型号卫星高能粒子探测器的高压电源,输出电压稳定、纹波系数小,达到设计目的.试验证明这种电路设计简单、高效,可为相关电路设计提供参考.

  3. Polypyrrole: FeOx·ZnO nanoparticle solar cells with breakthrough open-circuit voltage prepared from relatively stable liquid dispersions

    KAUST Repository

    Zong, Baoyu

    2014-01-01

    Organic hybrid solar cells with a large open-circuit voltage, up to above that of 1.5 V standard battery voltage, were demonstrated using blends of polypyrrole: Fe2O3·ZnO nanoparticles as active-layers. The cell active-layers were readily coated in open air from relatively stable liquid dark-color polypyrrole-based dispersions, which were synthesized using appropriate surfactants during the in situ polymerization of pyrrole with FeCl3 or both H2O2 and FeCl3 as the oxidizers. The performance of the cells depends largely on the synthesized blend phase, which is determined by the surfactants, oxidizers, as well as the reactant ratio. Only the solar cells fabricated from the stable dispersions can produce both a high open-circuit voltage (>1.0 V) and short-circuit current (up to 7.5 mA cm-2) due to the relatively uniform porous network nanomorphology and higher shunt to series resistance ratio of the active-layers. The cells also display a relatively high power-conversion efficiency of up to ∼3.8%. This journal is

  4. TIME DOMAIN REFLECTOMETRY FOR THE LOCALIZATION OF ELECTRICAL FAULTS IN THE INSTRUMENTATION OF THE LHC STRING MAGNETS A Study Case of Voltage Tap, Temperature, and Pressure Transducer Circuits

    CERN Document Server

    Komorowski, P

    1999-01-01

    Time Domain Reflectometry (TDR) is one of the most powerful methods used to analyze the integrity of the signal propagating in a transmission line. The method is based on the principle that the wave propagating in the line is reflected at the locations where the impedance of the line changes. The fault points, joints, branches, junctions, abrupt cross-section changes, etc., cause such reflections. The reflectometry technique involves the excitation of the circuit under test with either a fast edge step function or a well-defined impulse confined in time and frequency domains, and thereafter detection of the amplitude and time of the reflections. Both variants of the method were successfully applied to localize open circuit faults in the voltage tap connections, pressure transducers, and temperature sensing carbon gages circuits of the LHC String Dipole Magnet MB2 and Short Straight Section Quadrupole.

  5. SEMICONDUCTOR INTEGRATED CIRCUITS: A current-mode voltage regulator with an embedded sub-threshold reference for a passive UHF RFID transponder

    Science.gov (United States)

    Zhongqi, Liu; Chun, Zhang; Yongming, Li; Zhihua, Wang

    2010-06-01

    This paper presents a current-mode voltage regulator for a passive UHF RFID transponder. The passive tag power is extracted from RF energy through the RF-to-DC rectifier. Due to huge variations of the incoming RF power, the rectifier output voltage should be regulated to achieve a stable power supply. By accurately controlling the current flowing into the load with an embedded sub-threshold reference, the regulated voltage varies in a range of 1-1.3 V from -20 to 80 °C, and a bandwidth of about 100 kHz is achieved for a fast power recovery. The circuit is fabricated in UMC 0.18 μm mixed-mode CMOS technology, and the current consumption is only 1 μA.

  6. A Survey of Non-conventional Techniques for Low-voltage Low-power Analog Circuit Design

    National Research Council Canada - National Science Library

    F. Khateb; S. Bay Abo Dabbous; S. Vlassis

    2013-01-01

    ...). Therefore, this paper presents the operation principle, the advantages and disadvantages of each of these techniques, enabling circuit designers to choose the proper design technique based on application...

  7. 内燃机车励磁恒压调节装置电路设计%Circuit design of excitation and constant voltage regulator for diesel locomotive

    Institute of Scientific and Technical Information of China (English)

    邵志和

    2001-01-01

    介绍内燃机车励磁恒压调节装置的功能,详细叙述了该装置的过压、欠压和过流保护电路原理,阐述了利用脉宽调制来控制输出的电压值和电流值的方法。TPZ25型恒压励磁调节装置现已运用在160km/h“曙光号”内燃动车上,在国内内燃机车供电系统属首次研制。%Functions of the excitation and constant voltage regulator fordiesel locomotive are introduced, of which the circuit principle of over-voltage, under-voltage and over-current protection is depicted. Also expounded is the voltage and current control method via pulse width modulation (PWM). Currently TPZ25 excitation and constant voltage regulator has been installed on 160 km/h “Shu Guang Hao” DMU.

  8. Asymptotic and numerical prediction of current-voltage curves for an organic bilayer solar cell under varying illumination and comparison to the Shockley equivalent circuit

    KAUST Repository

    Foster, J. M.

    2013-01-01

    In this study, a drift-diffusion model is used to derive the current-voltage curves of an organic bilayer solar cell consisting of slabs of electron acceptor and electron donor materials sandwiched together between current collectors. A simplified version of the standard drift-diffusion equations is employed in which minority carrier densities are neglected. This is justified by the large disparities in electron affinity and ionisation potential between the two materials. The resulting equations are solved (via both asymptotic and numerical techniques) in conjunction with (i) Ohmic boundary conditions on the contacts and (ii) an internal boundary condition, imposed on the interface between the two materials, that accounts for charge pair generation (resulting from the dissociation of excitons) and charge pair recombination. Current-voltage curves are calculated from the solution to this model as a function of the strength of the solar charge generation. In the physically relevant power generating regime, it is shown that these current-voltage curves are well-approximated by a Shockley equivalent circuit model. Furthermore, since our drift-diffusion model is predictive, it can be used to directly calculate equivalent circuit parameters from the material parameters of the device. © 2013 AIP Publishing LLC.

  9. Transient Recovery Voltages at the Main 132kV Line Bay GIS Circuit Breaker in a Windfarm

    DEFF Research Database (Denmark)

    Arana Aristi, Iván; Okholm, J.; Holbøll, Joachim

    2011-01-01

    parameters in the network was evaluated during a fault in the onshore substation. The rate of rise of recovery voltage (RRRV) and the maximum crest voltage (Uc) of the TRV across the GIS CB were compared against the standard values based on the type test results from the GIS. The investigations were...

  10. Assumption or Fact? Line-to-Neutral Voltage Expression in an Unbalanced 3-Phase Circuit during Inverter Switching

    Science.gov (United States)

    Masrur, M. A.

    2009-01-01

    This paper discusses the situation in a 3-phase motor or any other 3-phase system operating under unbalanced operating conditions caused by an open fault in an inverter switch. A dc voltage source is assumed as the input to the inverter, and under faulty conditions of the inverter switch, the actual voltage applied between the line to neutral…

  11. Self-commutated high-voltage direct current transmission with DC circuit breakers. Backbone for the energy policy turnaround; Selbstgefuehrte Hochspannungs-Gleichstromuebertragung mit DC-Leistungsschalter. Rueckgrat fuer die Energiewende

    Energy Technology Data Exchange (ETDEWEB)

    Goerner, Raphael [ABB AG, Mannheim (Germany). Marketing und Vertrieb, Geschaeftsbereich Grid Systems

    2013-06-01

    The 'current war' between direct current and alternating current is extended by a new location. In the future, both technologies work together in order to provide a reliable power transmission in Germany and long-term in Europe. This is based on the self-guided high-voltage direct current transmission. In conjunction with direct current circuit breakers (DC circuit breaker) the power circuit breakers may help to make the transmission grids more flexible and to minimize losses.

  12. 基于TTL数字电路控制的高压脉冲源%High-voltage pulse source controlled by TTL digital circuit

    Institute of Scientific and Technical Information of China (English)

    李玺钦; 丁明军; 吴红光; 冯莉; 刘云涛; 戴文峰; 黄雷

    2012-01-01

    给出了一种基于TTL数字电路作为高压脉冲源触发控制单元的设计原理和方法.介绍了高压脉冲源的工作原理,设计了一台脉冲输出幅度5 kV、脉冲宽度大于200 μs及脉冲前沿小于30 ns的高压脉冲源.将触发控制单元和前级开关金属氧化物半导体场效应管(MOSFET)组合成一体,控制后级气体高压开关管放电输出高压脉冲信号.实验结果验证了所采用的设计原理及方法的可行性,给出了单次触发情况下的实验结果.%The paper introduces a TTL digital circuit, which is designed as the trigger control system of high power pulse source, and presents the development of a high-voltage pulse source. In the source, the TTL circuit operated after the optical isolation circuit and power driver, and outputs pulse signals to drive MOSFET, which controls the pulse signal output from high-voltage switch. The source can outputs pulses with voltage of 5 kV, pulse-width larger than 200 Ωs and fall-time less than 30 ns. Besides long-distance control and local control mode, it also includes inner trigger and external trigger (one electric signal and one optical signal as the trigger). A series of experiments have been conducted to validate the design, and the one-shot trigger results are presented.

  13. Inverted Fuel Cell: Room-Temperature Hydrogen Separation from an Exhaust Gas by Using a Commercial Short-Circuited PEM Fuel Cell without Applying any Electrical Voltage.

    Science.gov (United States)

    Friebe, Sebastian; Geppert, Benjamin; Caro, Jürgen

    2015-06-26

    A short-circuited PEM fuel cell with a Nafion membrane has been evaluated in the room-temperature separation of hydrogen from exhaust gas streams. The separated hydrogen can be recovered or consumed in an in situ olefin hydrogenation when the fuel cell is operated as catalytic membrane reactor. Without applying an outer electrical voltage, there is a continuous hydrogen flux from the higher to the lower hydrogen partial pressure side through the Nafion membrane. On the feed side of the Nafion membrane, hydrogen is catalytically split into protons and electrons by the Pt/C electrocatalyst. The protons diffuse through the Nafion membrane, the electrons follow the short-circuit between the two brass current collectors. On the cathode side, protons and electrons recombine, and hydrogen is released. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. LTPS-TFT Pixel Circuit Compensating for TFT Threshold Voltage Shift and IR-Drop on the Power Line for AMOLED Displays

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2012-01-01

    Full Text Available We propose a new pixel design for the active matrix organic light-emitting diode (AMOLED using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs. The proposed pixel is composed of four switching TFTs, one driving TFT (DTFT, and one capacitor. The simulation results are performed by AIM-SPICE software. The error rate of OLED output current with (threshold voltage variation (0.3 V and power line drop by 1 V are improved to about 1.67% and 15%, respectively. Thus, the proposed pixel circuit can successfully overcome drawbacks suffered from DTFT threshold voltage deviation and IR-drop on power line.

  15. Towards a high open-circuit voltage by co-additives in electrolyte for high-efficiency dye-sensitized solar cells

    Science.gov (United States)

    Sun, Xun; Li, Yafeng; Mao, Haijuan; Dou, Jie; Wei, Mingdeng

    2017-08-01

    The co-additives of benzimidazole and 2-ethylimidazole in electrolyte have an obvious effect on the performance of dye-sensitized solar cells due to their good coordination ability of titanium dioxide, which could affect the energy levels and charge transfer process. Through a balance of the concentrations, the best efficiency of 7.93% with a high open-circuit voltage of 0.817 V is achieved for a cell fabricated with the electrolyte contains benzimidazole and 2-ehtylimidazole by a molar ratio of 9.5/0.5.

  16. A New Opamp-less CMOS Bandgap Voltage Reference Circuit%一种新型无运放CMOS带隙基准电路

    Institute of Scientific and Technical Information of China (English)

    冯树; 王永禄; 张跃龙

    2012-01-01

    Theory of bandgap reference voltage and conventional bandgap reference circuits were presented, and a novel bandgap reference circuit without op-amp was designed. In the circuit, MOS current mirrors and negative feedback clamping technique were used to avoid the use of operational amplifier, thus eliminating effects of offset and power supply rejection ratio (PSRR) of the operational amplifier on accuracy of bandgap voltage reference. Based on 0. 18 μm standard CMOS process, the circuit was simulated using Spectre of Cadence. Simulation results showed that the bandgap voltage reference circuit had a temperature coefficient of 6. 73 ×10-6/℃ in the temperature range from -40 °C to 125 ℃, and a PSRR of 54. 8 dB, and it consumed 0. 25 mW of power from 2. 5 V supply.%介绍了带隙基准原理和常规的带隙基准电路,设计了一种新型无运放带隙基准电路.该电路利用MOS电流镜和负反馈箝位技术,避免了运放的使用,从而消除了运放带隙基准电路中运放的失调电压和电源抑制比等对基准源精度的影响.该新型电路比传统无运放带隙基准电路具有更高的精度和电源抑制比.基于0.18μm标准CMOS工艺,在Cadence Spectre环境下仿真.采用2.5V电源电压,在-40℃~125℃温度范围的温度系数为6.73×10-6/℃,电源抑制比为54.8dB,功耗仅有0.25 mW.

  17. Study of Voltage-sharing Circuit for Thyristor Series and Its Design%晶闸管串联均压电路设计与仿真研究

    Institute of Scientific and Technical Information of China (English)

    郭鹏; 王宏华; 冯进通; 尹祥顺; 李军民

    2015-01-01

    晶闸管串联式高压异步电动机软启动器应用前景广阔,晶闸管串联均压是其关键技术之一。对晶闸管串联均压电路进行了研究与设计,仿真分析了均压电路参数选取对均压效果的影响。仿真表明:采用动、静态均压电路可有效抑制开通和关断过程中晶闸管串联分压不均,对均压电路参数优化设计具有重要作用。%The high-voltage asynchronous motor soft starter is widely used in thyristor series. One of its key techniques is the volt-age-sharing of thyristor series. This paper researches on and designs the voltage-sharing circuit for thyristor series, and analyzes and simulates the relationship between voltage-sharing circuit parameters and voltage-sharing effect. The simulation results show that thyristor series voltage-sharing inequality in the process of conducting and turning off is effectively suppressed in the dynamic and static voltage-sharing circuit. The optimization of voltage-sharing circuit parameters plays an important role.

  18. Dividing Discipline

    DEFF Research Database (Denmark)

    Kristensen, Peter Marcus

    2012-01-01

    the periphery of the network—security studies and international political economy in particular—but communication is also divided along the lines of geography and policy/theory. The article concludes that divisions notwithstanding, IR communication remains centered around American, general, and theoretical IR...

  19. A current-excited triple-time-voltage oversampling method for bio-impedance model for cost-efficient circuit system.

    Science.gov (United States)

    Yan Hong; Yong Wang; Wang Ling Goh; Yuan Gao; Lei Yao

    2015-08-01

    This paper presents a mathematic method and a cost-efficient circuit to measure the value of each component of the bio-impedance model at electrode-electrolyte interface. The proposed current excited triple-time-voltage oversampling (TTVO) method deduces the component values by solving triple simultaneous electric equation (TSEE) at different time nodes during a current excitation, which are the voltage functions of time. The proposed triple simultaneous electric equations (TSEEs) allows random selections of the time nodes, hence numerous solutions can be obtained during a single current excitation. Following that, the oversampling approach is engaged by averaging all solutions of multiple TSEEs acquired after a single current excitation, which increases the practical measurement accuracy through the improvement of the signal-to-noise ratio (SNR). In addition, a print circuit board (PCB) that consists a switched current exciter and an analog-to-digital converter (ADC) is designed for signal acquisition. This presents a great cost reduction when compared against other instrument-based measurement data reported [1]. Through testing, the measured values of this work is proven to be in superb agreements on the true component values of the electrode-electrolyte interface model. This work is most suited and also useful for biological and biomedical applications, to perform tasks such as stimulations, recordings, impedance characterizations, etc.

  20. Transformer-based design techniques for oscillators and frequency dividers

    CERN Document Server

    Luong, Howard Cam

    2016-01-01

    This book provides in-depth coverage of transformer-based design techniques that enable CMOS oscillators and frequency dividers to achieve state-of-the-art performance.  Design, optimization, and measured performance of oscillators and frequency dividers for different applications are discussed in detail, focusing on not only ultra-low supply voltage but also ultra-wide frequency tuning range and locking range.  This book will be an invaluable reference for anyone working or interested in CMOS radio-frequency or mm-Wave integrated circuits and systems.

  1. SEMICONDUCTOR INTEGRATED CIRCUITS: A full on-chip CMOS low-dropout voltage regulator with VCCS compensation

    Science.gov (United States)

    Leisheng, Gao; Yumei, Zhou; Bin, Wu; Jianhua, Jiang

    2010-08-01

    A full on-chip CMOS low-dropout (LDO) voltage regulator with high PSR is presented. Instead of relying on the zero generated by the load capacitor and its equivalent series resistance, the proposed LDO generates a zero by voltage-controlled current sources for stability. The compensating capacitor for the proposed scheme is only 0.18 pF, which is much smaller than the capacitor of the conventional compensation scheme. The full on-chip LDO was fabricated in commercial 0.35 μm CMOS technology. The active chip area of the LDO (including the bandgap voltage reference) is 400 × 270 μm2. Experimental results show that the PSR of the LDO is -58.7 dB at a frequency of 10 Hz and -20 dB at a frequency of 1 MHz. The proposed LDO is capable of sourcing an output current up to 50 mA.

  2. Voltage Regulators for Photovoltaic Systems

    Science.gov (United States)

    Delombard, R.

    1986-01-01

    Two simple circuits developed to provide voltage regulation for highvoltage (i.e., is greater than 75 volts) and low-voltage (i.e., is less than 36 volts) photovoltaic/battery power systems. Use of these circuits results in voltage regulator small, low-cost, and reliable, with very low power dissipation. Simple oscillator circuit controls photovoltaic-array current to regulate system voltage and control battery charging. Circuit senses battery (and system) voltage and adjusts array current to keep battery voltage from exceeding maximum voltage.

  3. Solenoid-Simulation Circuit

    Science.gov (United States)

    Simon, R. A.

    1986-01-01

    Electrical properties of solenoids imitated for tests of control circuits. Simulation circuit imitates voltage and current responses of two engine-controlling solenoids. Used in tests of programs of digital engine-control circuits, also provides electronic interface with circuits imitating electrical properties of pressure sensors and linear variable-differential transformers. Produces voltages, currents, delays, and discrete turnon and turnoff signals representing operation of solenoid in engine-control relay. Many such circuits used simulating overall engine circuitry.

  4. Development of a New Cascade Voltage-Doubler for Voltage Multiplication

    OpenAIRE

    Arash Toudeshki; Norman Mariun; Hashim Hizam; Noor Izzri Abdul Wahab

    2014-01-01

    For more than eight decades, cascade voltage-doubler circuits are used as a method to produce DC output voltage higher than the input voltage. In this paper, the topological developments of cascade voltage-doublers are reviewed. A new circuit configuration for cascade voltage-doubler is presented. This circuit can produce a higher value of the DC output voltage and better output quality compared to the conventional cascade voltage-doubler circuits, with the same number of stages.

  5. Determination of economically justified parameters of synchronous disconnection at low-voltage circuit switching via a synchronous vacuum contactor

    Directory of Open Access Journals (Sweden)

    A.V. Verkhola

    2014-04-01

    Full Text Available Dependence of a single switching procedure cost upon the contact opening delay time and delay-time spread is derived for a low-voltage synchronous vacuum contactor. For different cost levels, boundaries of permissible values of delay-time and delay-time spread are specified.

  6. Control of a Two-Stage Direct Power Converter with a Single Voltage Sensor Mounted in the Intermediary Circuit

    DEFF Research Database (Denmark)

    Klumpner, Christian; Wheeler, P.; Blaabjerg, Frede

    2004-01-01

    Controlling a converter requires not only a powerful processors but also accurate voltage and current sensors and fast and precise analogue-digital converters, which increase the cost per kW of the assembly, especially in the low power range. A matrix converter requires less transducers than a ba...

  7. 压控电压源二阶低通有源滤波电路设计与仿真%Design and simulation of two-order voltage source low pass active filter circuit controlled by voltage

    Institute of Scientific and Technical Information of China (English)

    侯卫周; 谷城

    2014-01-01

    利用M ultisim10.1软件对压控电压源二阶低通滤波器进行仿真分析,通过选择不同信号源观察输入、输出波形的相位关系和幅值关系,比较输出、输入波形幅值比是否等于通带电压放大倍数;调节负反馈电阻大小,观察品质因素变化对滤波器幅频特性和相频特性的影响,得到的仿真的结果与实际理论分析基本一致。仿真结果表明,将M ultisim10.1合理地引入到模拟电子线路实验教学中,能将一些高深、抽象的电子电路的理论教学变得具体和生动,有利于学生对电路的认知,提高电子线路理论课的教学效果和教学质量。%The two-order low pass active filter circuit of voltage controlled voltage source has been analyzed and simulated by Multisim10 .1 software ,observed the phase-frequency and amplitude-frequency of output and input waveform via choosing different signal sources ,the output and input waveform amplitude ratio compared is equal to the pass band voltage amplification or not ;when by adjusting negative feedback resistance ,the influence of phase-frequency and amplitude-frequency characteristics as quality factors changing can be observed .The simulation results are consistent with the practical theory .It shows that reasonably introducing Multisim10 .1 simulation technology could make some abstract and advanced theoretical teaching become concretely and lively ,thus it is suitable for cultivating students’ cognitive view of circuit ,further can improve teaching effect and teaching quality of the Electronic Circuit Theory couse .

  8. Dividing Discipline

    DEFF Research Database (Denmark)

    Kristensen, Peter Marcus

    2012-01-01

    International Relations (IR) has cultivated an image as a discipline with strong divisions along paradigmatic, methodological, metatheoretical, geographical, and other lines. This article questions that image analyzing the latent structures of communication in IR. It uses citation data from more...... the periphery of the network—security studies and international political economy in particular—but communication is also divided along the lines of geography and policy/theory. The article concludes that divisions notwithstanding, IR communication remains centered around American, general, and theoretical IR...

  9. Protection of transformers and low voltage secondary circuits; Protecao de transformadores e circuitos secundarios em baixa tensao

    Energy Technology Data Exchange (ETDEWEB)

    Bueno, Alexandre Francisco Maia; Bouissou, Jean Jacques [Companhia Energetica de Minas Gerais (CEMIG), Belo Horizonte, MG (Brazil)

    1994-12-31

    This work discusses two themes related to equipment and circuit protection, both of which are components of overhead electric power transmission networks. Two CEMIG`s, the electric power company of Minas Gerais State - Southeast Brazil, experiences are presented. The work also discusses the technical reliability of these two protection conceptions. The results obtained results are also presented and discussed 3 refs., 3 figs., 2 tabs.

  10. Low-voltage polymer/small-molecule blend organic thin-film transistors and circuits fabricated via spray deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hunter, By Simon; Anthopoulos, Thomas D., E-mail: t.anthopoulos@ic.ac.uk [Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington SW7 2AZ (United Kingdom); Ward, Jeremy W.; Jurchescu, Oana D. [Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109 (United States); Payne, Marcia M.; Anthony, John E. [Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506 (United States)

    2015-06-01

    Organic thin-film electronics have long been considered an enticing candidate in achieving high-throughput manufacturing of low-power ubiquitous electronics. However, to achieve this goal, more work is required to reduce operating voltages and develop suitable mass-manufacture techniques. Here, we demonstrate low-voltage spray-cast organic thin-film transistors based on a semiconductor blend of 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene and poly(triarylamine). Both semiconductor and dielectric films are deposited via successive spray deposition in ambient conditions (air with 40%–60% relative humidity) without any special precautions. Despite the simplicity of the deposition method, p-channel transistors with hole mobilities of >1 cm{sup 2}/Vs are realized at −4 V operation, and unipolar inverters operating at −6 V are demonstrated.

  11. Operation of High-Voltage Transverse Shock Wave Ferromagnetic Generator in the Open Circuit and Charging Modes

    Science.gov (United States)

    2005-06-01

    FMGs are based on the transverse (when the shock wave propagates across the magnetization vector M) shock demagnetization of Nd2Fe14B hard...generators based on the transverse (when the shock wave propagates across the magnetization vector M) shock wave demagnetization of Nd2Fe14B hard...and photo of a high-voltage transverse FMG are shown in Fig. 1. It contains a hollow hard ferromagnetic cylindrical Nd2Fe14B energy-carrying

  12. Commutation circuit for an HVDC circuit breaker

    Science.gov (United States)

    Premerlani, William J.

    1981-01-01

    A commutation circuit for a high voltage DC circuit breaker incorporates a resistor capacitor combination and a charging circuit connected to the main breaker, such that a commutating capacitor is discharged in opposition to the load current to force the current in an arc after breaker opening to zero to facilitate arc interruption. In a particular embodiment, a normally open commutating circuit is connected across the contacts of a main DC circuit breaker to absorb the inductive system energy trapped by breaker opening and to limit recovery voltages to a level tolerable by the commutating circuit components.

  13. Design of CMOS bandgap voltage reference circuit with high PSR%一种高PSR CMOS带隙基准电路设计

    Institute of Scientific and Technical Information of China (English)

    贺志伟; 姜岩峰

    2014-01-01

    为了降低芯片电路功耗,电源电压需要不断的减小,这将导致电源噪声对基准电压产生严重影响。为此针对这一问题进行相关研究,采用SMIC 0.18μm工艺,设计出一种低功耗、低温度系数的高PSR带隙基准电压源。仿真结果表明,该设计带隙基准源的PSR在50 kHz与100 kHz分别为-65.13 dB和-53.85 dB;在2~6 V电源电压下,工作电流为30μA,温度系数为30.38 ppm/℃,电压调整率为71.47μV/V。该带隙基准适用于在低功耗高PSR性能需求的LDOs电路中应用。%The power supply voltage needs to be constantly decreased to meet the requirement of reducing the low-power consumption of IC,but it may lead to the negative impact of power supply noise on the reference voltage. A low-power consump-tion bandgap voltage reference with high PSR (power supply rejection) and low-temperature coefficent was design based on in SMIC0.18μm process. The simulation results show that the PSR of the bandgap reference source is -65.13 dB at 50 kHz and -53.85 dB at 100 kHz respectively;at 2~6 V supply voltage,the supply current is 30 μA,the temperature coefficient is 30.38 ppm/℃,and the voltage regulation rate is 71.47 μV/V. The bandgap voltage reference is suitable for LDOs circuit which has the requirements of low-power consumption and high PSR.

  14. Quantized amplitudes in a nonlinear resonant electrical circuit

    CERN Document Server

    Cretin, B

    2008-01-01

    We present a simple nonlinear resonant analog circuit which demonstrates quantization of resonating amplitudes, for a given excitation level. The system is a simple RLC resonator where C is an active capacitor whose value is related to the current in the circuit. This variation is energetically equivalent to a variation of the potential energy and the circuit acts as a pendulum in the gravitational field. The excitation voltage, synchronously switched at the current frequency, enables electrical supply and keeping the oscillation of the system. The excitation frequency has been set to high harmonic of the fundamental oscillation so that anisochronicity can keep constant the amplitude of the circuit voltage and current. The behavior of the circuit is unusual: different stable amplitudes have been measured depending on initial conditions and excitation frequency, for the same amplitude of the excitation. The excitation frequency is naturally divided by the circuit and the ratio is kept constant without external...

  15. Simulation of the Process of Arc Energy-Effect in High Voltage Auto-Expansion SF6 Circuit Breaker

    Institute of Scientific and Technical Information of China (English)

    Rong Mingzhe; Yang Qian; Fan Chunduo

    2005-01-01

    A new magnetic hydro-dynamics (MHD) model of arc in H.V. auto-expansion SF6circuit breaker that takes into consideration nozzle ablation due to both radiation and thermal conduction is presented in this paper. The effect of PTFE (polytetrafluorethylene) vapor is considered in the mass, momentum and energy conservation equations of the constructed model. Then,the gas flow fields with and without conduction considered are simulated. By comparing the aforementioned two results, it is indicated that the arc's maximal temperature with conduction considered is 90 percent of that without considering conduction.

  16. Improve the open-circuit voltage of ZnO solar cells with inserting ZnS layers by two ways

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Yunfei [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Yang, Jinghai, E-mail: jhyang1@jlnu.edu.cn [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Yang, Lili; Cao, Jian [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Gao, Ming [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Zhang, Zhiqiang; Wang, Zhe [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Song, Hang [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

    2013-04-15

    ZnS NPs layers were deposited on ZnO NRs by two different ways. One is spin coating; the other is successive ionic layer adsorption and reaction (SILAR) method. The ZnO NRs/ZnS NPs composites were verified by X-ray diffraction, X-ray photoelectron spectroscopy, and UV–visible spectrophotometer; their morphologies and thicknesses were examined by scanning electron microscopic and transmission electron microscopic images. The CdS quantum dot sensitized solar cells (QDSSCs) were constructed using ZnO NRs/ZnS NPs composites as photoanode and their photovoltaic characteristic was studied by J–V curves. The results indicated that the way of SILAR is more beneficial for retarding the back transfer of electrons to CdS and electrolyte than spin coating method. The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method. When ZnS NPs layer was deposited for 10 times on ZnO NRs, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. - Graphical abstract: When ZnO nanorods were deposited by ZnS for 10 times, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. Highlights: ► ZnS layers were deposited with two different ways. ► The way of SILAR is more beneficial for retarding the back transfer of electrons. ► The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method.

  17. Online Estimation of Model Parameters and State of Charge of LiFePO4 Batteries Using a Novel Open-Circuit Voltage at Various Ambient Temperatures

    Directory of Open Access Journals (Sweden)

    Fei Feng

    2015-04-01

    Full Text Available This study describes an online estimation of the model parameters and state of charge (SOC of lithium iron phosphate batteries in electric vehicles. A widely used SOC estimator is based on the dynamic battery model with predeterminate parameters. However, model parameter variances that follow with their varied operation temperatures can result in errors in estimating battery SOC. To address this problem, a battery online parameter estimator is presented based on an equivalent circuit model using an adaptive joint extended Kalman filter algorithm. Simulations based on actual data are established to verify accuracy and stability in the regression of model parameters. Experiments are also performed to prove that the proposed estimator exhibits good reliability and adaptability under different loading profiles with various temperatures. In addition, open-circuit voltage (OCV is used to estimate SOC in the proposed algorithm. However, the OCV based on the proposed online identification includes a part of concentration polarization and hysteresis, which is defined as parametric identification-based OCV (OCVPI. Considering the temperature factor, a novel OCV–SOC relationship map is established by using OCVPI under various temperatures. Finally, a validating experiment is conducted based on the consecutive loading profiles. Results indicate that our method is effective and adaptable when a battery operates at different ambient temperatures.

  18. Open-circuit voltage enhancement on the basis of polymer gel electrolyte for a highly stable dye-sensitized solar cell.

    Science.gov (United States)

    Wu, Congcong; Jia, Lichao; Guo, Siyao; Han, Song; Chi, Bo; Pu, Jian; Jian, Li

    2013-08-28

    Dye-sensitized solar cells (DSSC) have received considerable attention owing to their low preparation cost and easy fabrication process. However, one of the drawbacks that limits the further application of DSSC is their poor stability, arising from the leakage and volatilization of the liquid organic solvent in the electrolyte. Therefore, to improve the long-term stability of DSSC, polymer gel electrolyte was studied to replace the conventional liquid electrolyte in this work. The results show that compared to liquid electrolyte, DSSC with polymer gel electrolyte has a smaller short-circuit current (Jsc), which decreases with the increase of the polymer gelator. Nevertheless, with the employment of the polymer gel electrolyte, there is a significant enhancement of open-circuit voltage (Voc), and it increases with the increase of the polymer gelator content. The highest Voc, up to 0.873 V, can be obtained for DSSC with a 30% polymer gelator content. The impact of the polymer gel electrolyte on the photovoltaic performance of DSSC, especially on Voc, was studied by analyzing the charge-transfer kinetics in the polymer gel electrolyte. Furthermore, the influence of the polymer gel electrolyte on the long-term stability of DSSC was also investigated.

  19. Relationship between Work Function of Hole Collection Electrode and Temperature Dependence of Open-Circuit Voltage in Multilayered Organic Solar Cells

    Science.gov (United States)

    Itoh, Eiji; Shirotori, Toshiki

    2012-02-01

    We have investigated the photovoltaic properties of multilayered organic photovoltaic devices consisting of indium tin oxide (ITO)/(NiO)/donor/C60/bathocuproine (BCP)/Al structures. Open circuit voltage (VOC) increases with the decrease in temperature between 40 and 350 K. The VOC was, however, pinned at approximately 0.6 V for the device without NiO, probably owing to the insufficient work-function difference between ITO and Al electrodes. The hole injection was also markedly suppressed at the ITO/donor interface in the device with large IP donor materials without the buffer layer and abnormal S-shaped current density-voltage (J-V) characteristics were observed. On the other hand, the value of VOC increases with the increase in ionization potential (IP) of donor materials in the device with NiO buffer layers owing to the enhanced work-function difference of about 1 eV, and the S-shaped curves disappeared at the high temperatures above 200 K. The VOC is further improved to nearly 1.2 V by the UV-ozone treatment of the NiO surface. We have therefore concluded that the increment of work function of the anode caused by the insertion of an oxide buffer layer and the surface treatment of the electrode by UV-ozone treatment are essentially important for the improvement of VOC and charge transport/injection properties in the multilayered organic solar cell applications.

  20. 农用高压电网圆柱形殷钢电容分压器边缘效应的研究%Application Study of Agricultural High-voltage Grid of Cylindrical Invar on Capacitive Divider Edge Effects

    Institute of Scientific and Technical Information of China (English)

    董赫; 李伟凯

    2015-01-01

    By comparing the calculated value and actual measurement value of invar on the capacitive voltage divider,the presence of edge effects caused the actual results was too large capacitive divider conclusions. The theoretical analysis was used as a starting point and combined with calculus theory and capacitors idea,and the edge effects formula of the total capacitance value was derived. According to the characteristics of the cylindrical capacitor,the approach of increasing the capacitive divider edge capacitance on the ring chamfer radius was provided to weaken the edge effect,and the test had been passed to verify the program feasibility.%通过殷钢电容分压器理论计算值与实际测量值的对比,得到边缘效应的存在导致电容分压器的实际测量值偏大的结论。以理论分析为切入点,结合微积分原理及电容串联思想,推导出计及边缘效应的分压器电容值计算公式。针对圆柱形电容器的特点,提出利用增加电容分压器边缘电容环倒角半径的方法来削弱边缘效应,并通过试验验证了该方案的可行性。

  1. Circuit Design: An inquiry lab activity at Maui Community College

    CERN Document Server

    Morzinski, Katie; Downs, Cooper; Favaloro, Tela; Park, Jung; U, Vivian

    2010-01-01

    We present an inquiry lab activity on Circuit Design that was conducted in Fall 2009 with first-year community college students majoring in Electrical Engineering Technology. This inquiry emphasized the use of engineering process skills, including circuit assembly and problem solving, while learning technical content. Content goals of the inquiry emphasized understanding voltage dividers (Kirchoff's voltage law) and analysis and optimization of resistive networks (Thevenin equivalence). We assumed prior exposure to series and parallel circuits and Ohm's law (the relationship between voltage, current, and resistance) and designed the inquiry to develop these skills. The inquiry utilized selection of engineering challenges on a specific circuit (the Wheatstone Bridge) to realize these learning goals. Students generated questions and observations during the starters, which were categorized into four engineering challenges or design goals. The students formed teams and chose one challenge to focus on during the i...

  2. Analog circuit design designing waveform processing circuits

    CERN Document Server

    Feucht, Dennis

    2010-01-01

    The fourth volume in the set Designing Waveform-Processing Circuits builds on the previous 3 volumes and presents a variety of analog non-amplifier circuits, including voltage references, current sources, filters, hysteresis switches and oscilloscope trigger and sweep circuitry, function generation, absolute-value circuits, and peak detectors.

  3. SF6高压断路器检测维护策略研究%Research on the detection and maintenance strategy of SF6 high voltage circuit breaker

    Institute of Scientific and Technical Information of China (English)

    孙勇军

    2016-01-01

    SF6高压断路器是利用六氟化硫气体作为灭弧介质和绝缘介质的一种断路器,由于SF6气体的优异性能,使其在应用过程中具备明显的优势.鉴于此,本文主要分析SF6高压断路器的检测维护策略.%SF6 high voltage circuit breaker is a circuit breaker which uses six sulfur fluoride gas as arc extinguishing media and insulating medium,which has obvious advantages in the application process because of the excellent performance of SF6 gas.In view of this,this paper mainly analyzes the SF6 high voltage circuit breaker testing and maintenance strategy.

  4. Transient Voltage Recorder

    Science.gov (United States)

    Medelius, Pedro J. (Inventor); Simpson, Howard J. (Inventor)

    2002-01-01

    A voltage transient recorder can detect lightning induced transient voltages. The recorder detects a lightning induced transient voltage and adjusts input amplifiers to accurately record transient voltage magnitudes. The recorder stores voltage data from numerous monitored channels, or devices. The data is time stamped and can be output in real time, or stored for later retrieval. The transient recorder, in one embodiment, includes an analog-to-digital converter and a voltage threshold detector. When an input voltage exceeds a pre-determined voltage threshold, the recorder stores the incoming voltage magnitude and time of arrival. The recorder also determines if its input amplifier circuits clip the incoming signal or if the incoming signal is too low. If the input data is clipped or too low, the recorder adjusts the gain of the amplifier circuits to accurately acquire subsequent components of the lightning induced transients.

  5. Low Power Photomultiplier Tube Circuit And Method Thereor

    Science.gov (United States)

    Bochenski, Edwin B.; Skinner, Jack L.; Dentinger, Paul M.; Lindblom, Scott C.

    2006-04-18

    An electrical circuit for a photomultiplier tube (PMT) is disclosed that reduces power consumption to a point where the PMT may be powered for extended periods with a battery. More specifically, the invention concerns a PMT circuit comprising a low leakage switch and a high voltage capacitor positioned between a resistive divider and each of the PMT dynodes, and a low power control scheme for recharging the capacitors.

  6. Capacitor-voltage converter circuit based on CMOS%基于CMOS的电容-电压转换电路的设计

    Institute of Scientific and Technical Information of China (English)

    曹俊杰; 邱成军

    2013-01-01

    在MEMS传感器的电容检测电路中,经常要采用电容—电压转换电路.本研究将两相不交叠时钟模块应用到设计中,使得该电路用单个时钟就能进行有效控制,并能够满足MEMS电容检测系统的要求.采用0.25 μm工艺库对电路进行优化并给定了电路仿真的相应结论.仿真结果表明,其CMOS运放部分的增益为77.76 dB,单位增益带宽为5.60 MHz,相位裕量为65.87°,输出摆幅为-2.0~1.89 V,输入共模范围为-1.0 ~1.93V,正摆率为+9.92 V·μs-1,负摆率为5.03 V·μs-,功耗为1.03 mW.该电路适合于pF量级范围内的电容变化,该变化范围为35~1 200 pF,且输出线性度良好.%In the MEMS sensor capacitance detection of circuit,capacitive-voltage conversion circuit is often used.Two phase non-overlapping clock module has been applied to the design,so the circuit can be effectively controlled by a single clock and also be satisfied to the requirements of MEMS capacitive detection system.Using 0.25 μm technology library to optimize the circuit,the appropriate conclusions have been given out to the circuit simulation.The results show that part of its CMOS opamp is gain of 77.76 dB,the bandwidth of unity gain is 5.60 MHz,the phase margin is 65.87°,the output swing is-2.0 ~ 1.89 V,the input common mode range is-1.0 ~ 1.93 V,the positive slew rate is 9.92 V · μ S-1,the negative slew rate is 5.03 V · μ s-1,the power consumption is 1.03 mW.The circuit is suitable for capacitance change in the order of pF within the range of 35 ~ 1 200 pF,and the output is in good linearity.

  7. Mixed voltage VLSI design

    Science.gov (United States)

    Panwar, Ramesh; Rennels, David; Alkalaj, Leon

    1993-01-01

    A technique for minimizing the power dissipated in a Very Large Scale Integration (VLSI) chip by lowering the operating voltage without any significant penalty in the chip throughput even though low voltage operation results in slower circuits. Since the overall throughput of a VLSI chip depends on the speed of the critical path(s) in the chip, it may be possible to sustain the throughput rates attained at higher voltages by operating the circuits in the critical path(s) with a high voltage while operating the other circuits with a lower voltage to minimize the power dissipation. The interface between the gates which operate at different voltages is crucial for low power dissipation since the interface may possibly have high static current dissipation thus negating the gains of the low voltage operation. The design of a voltage level translator which does the interface between the low voltage and high voltage circuits without any significant static dissipation is presented. Then, the results of the mixed voltage design using a greedy algorithm on three chips for various operating voltages are presented.

  8. SEMICONDUCTOR INTEGRATED CIRCUITS 8.64-11.62 GHz CMOS VCO and divider in a zero-IF 802.11a/b/g WLAN and Bluetooth application

    Science.gov (United States)

    Yu, Sun; Niansong, Mei; Bo, Lu; Yumei, Huang; Zhiliang, Hong

    2010-10-01

    A fully integrated VCO and divider implemented in SMIC 0.13-μm RFCMOS 1P8M technology with a 1.2 V supply voltage is presented. The frequency of the VCO is tuning from 8.64 to 11.62 GHz while the quadrature LO signals for 802.11a WLAN in 5.8 GHz band or for 802.11b/g WLAN and Bluetooth in 2.4 GHz band can be obtained by a frequency division by 2 or 4, respectively. A 6 bit switched capacitor array is applied for precise tuning of all necessary frequency bands. The testing results show that the VCO has a phase noise of—113 dBc @ 1 MHz offset from the carrier of 5.5 GHz by dividing VCO output by two and the VCO core consumes 3.72 mW. The figure-of-merit for the tuning-range (FOMT) of the VCO is -192.6 dBc/Hz.

  9. Enhancement of open-circuit voltage on organic photovoltaic devices by Al-doped TiO{sub 2} modifying layer produced by sol–gel method

    Energy Technology Data Exchange (ETDEWEB)

    Valaski, R.; Arantes, C.; Senna, C.A.; Carôzo, Victor; Achete, C.A. [Materials Metrology Division, Instituto Nacional de Metrologia, Qualidade e Tecnologia, Xerém, Duque de Caxias 25250-020, RJ (Brazil); Cremona, M., E-mail: cremona@fis.puc-rio.br [Materials Metrology Division, Instituto Nacional de Metrologia, Qualidade e Tecnologia, Xerém, Duque de Caxias 25250-020, RJ (Brazil); Physics Department, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro 22453-970, RJ (Brazil)

    2014-12-01

    Sol–gel method has shown several advantages for oxide synthesis, such as lower cost production, coating large areas, lower processing temperatures and ease insertion of doping materials. Therefore, it is attractive for production of intermediate and electrode modifying layers in organic optoelectronic devices. Herein, spin-coated aluminum-doped titanium dioxide (AlTiO{sub 2}) thin films were produced by sol–gel method onto glass and fluorine-doped tin oxide (FTO) substrates, using different Al-dopant concentrations and post-done annealing temperatures. Electrical measurements were performed in order to investigate the improvement of the TiO{sub 2} resistivity. Additionally, structural, compositional, morphological, optical and electrical properties of the optimal AlTiO{sub 2} modifying layers onto FTO substrates were probed by different techniques, and compared with those obtained from the undoped thin films produced under similar conditions. Organic photovoltaic devices (OPVs) with the structure FTO/AlTiO{sub 2}(30 nm)/C{sub 60}(50 nm)/CuPc(50 nm)/Al with an Al concentration of 0.03 M in AlTiO{sub 2} layer were produced. The insertion of AlTiO{sub 2} thin films improved the short-circuit current density (J{sub sc}) as well as the open circuit voltage (V{sub oc}) in comparison with non-modified electrode FTO based devices. This behavior is discussed in terms of induced interface phenomena as dipole formation induced by Al. - Highlights: • Easy and cheap solution-process for AlTiO{sub 2} modification of FTO electrode for OPVs • Electrical, structural and optical characterization of TiO{sub 2} layers with Al-dopant • Improvement of Voc and Jsc of inverted OPVs with AlTiO{sub 2} modified electrode.

  10. Thieno[3,4-c]Pyrrole-4,6-Dione-Based Polymer Acceptors for High Open-Circuit Voltage All-Polymer Solar Cells

    KAUST Repository

    Liu, Shengjian

    2017-04-20

    While polymer acceptors are promising fullerene alternatives in the fabrication of efficient bulk heterojunction (BHJ) solar cells, the range of efficient material systems relevant to the “all-polymer” BHJ concept remains narrow, and currently limits the perspectives to meet the 10% efficiency threshold in all-polymer solar cells. This report examines two polymer acceptor analogs composed of thieno[3,4-c]pyrrole-4,6-dione (TPD) and 3,4-difluorothiophene ([2F]T) motifs, and their BHJ solar cell performance pattern with a low-bandgap polymer donor commonly used with fullerenes (PBDT-TS1; taken as a model system). In this material set, the introduction of a third electron-deficient motif, namely 2,1,3-benzothiadiazole (BT), is shown to (i) significantly narrow the optical gap (Eopt) of the corresponding polymer (by ≈0.2 eV) and (ii) improve the electron mobility of the polymer by over two orders of magnitude in BHJ solar cells. In turn, the narrow-gap P2TPDBT[2F]T analog (Eopt = 1.7 eV) used as fullerene alternative yields high open-circuit voltages (VOC) of ≈1.0 V, notable short-circuit current values (JSC) of ≈11.0 mA cm−2, and power conversion efficiencies (PCEs) nearing 5% in all-polymer BHJ solar cells. P2TPDBT[2F]T paves the way to a new, promising class of polymer acceptor candidates.

  11. Improved open-circuit voltage in Cu(In,Ga)Se{sub 2} solar cells with high work function transparent electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Jäger, Timo, E-mail: timo.jaeger@empa.ch; Romanyuk, Yaroslav E.; Bissig, Benjamin; Pianezzi, Fabian; Nishiwaki, Shiro; Reinhard, Patrick; Steinhauser, Jérôme; Tiwari, Ayodhya N. [Empa—Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Thin Films and Photovoltaics, Überlandstrasse 129, 8600 Dübendorf (Switzerland); Schwenk, Johannes [Empa—Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Nanoscale Materials Science, Überlandstrasse 129, 8600 Dübendorf (Switzerland)

    2015-06-14

    Hydrogenated indium oxide (IOH) is implemented as transparent front contact in Cu(In,Ga)Se{sub 2} (CIGS) solar cells, leading to an open circuit voltage V{sub OC} enhanced by ∼20 mV as compared to reference devices with ZnO:Al (AZO) electrodes. This effect is reproducible in a wide range of contact sheet resistances corresponding to various IOH thicknesses. We present the detailed electrical characterization of glass/Mo/CIGS/CdS/intrinsic ZnO (i-ZnO)/transparent conductive oxide (TCO) with different IOH/AZO ratios in the front TCO contact in order to identify possible reasons for the enhanced V{sub OC}. Temperature and illumination intensity-dependent current-voltage measurements indicate that the dominant recombination path does not change when AZO is replaced by IOH, and it is mainly limited to recombination in the space charge region and at the junction interface of the solar cell. The main finding is that the introduction of even a 5 nm-thin IOH layer at the i-ZnO/TCO interface already results in a step-like increase in V{sub OC}. Two possible explanations are proposed and verified by one-dimensional simulations using the SCAPS software. First, a higher work function of IOH as compared to AZO is simulated to yield an V{sub OC} increase by 21 mV. Second, a lower defect density in the i-ZnO layer as a result of the reduced sputter damage during milder sputter-deposition of IOH can also add to a maximum enhanced V{sub OC} of 25 mV. Our results demonstrate that the proper choice of the front TCO contact can reduce the parasitic recombination and boost the efficiency of CIGS cells with improved corrosion stability.

  12. Voltage Mode-to-Current Mode Transformation

    Directory of Open Access Journals (Sweden)

    Tejmal S. Rathore

    2012-10-01

    Full Text Available This paper proposes a procedure for converting a class of Op Amp-, FTFN-, CC- and CFAbased voltage mode circuits to corresponding current mode circuits without requiring any additional circuit elements and finally from Op Amp-based voltage mode circuits to any of the FTFN, CC and CFA current mode circuits. The latter circuits perform better at high frequency than the former ones. The validity of the transformation has been checked on simulated circuits with PSPICE.

  13. Review on Out-Of-Phase Making and Breaking Test Method of High-Voltage Circuit Breaker%高压断路器失步开合试验方法的评述

    Institute of Scientific and Technical Information of China (English)

    吴盛刚; 张建新; 赵建沛; 王鹏飞; 周跃刚

    2013-01-01

    Description was made to the multiple test circuits and the test conditions of high-voltage circuit breakers in carrying out out-of-phase making and breaking test and comparison was made to their advantages and disadvantages. According to the actual test conditions in test station, this paper selected transformer double-circuit which is convenient to carry out and parallel voltage injec-tion circuit and calculated parameters of 126 kV level test loop. Simulation was carried out for the relevant transient recovery voltage waveforms. The result is in conformity with the expected requirements, so it can be implemented.%阐述了高压断路器进行失步开合试验的多种试验线路及其试验条件,并比较了各自的优缺点。根据试验站的具体设备条件,选取了便于实施的变压器双联电路和并联电压引入回路,并计算了126 kV级试验回路的参数,对相应的瞬态恢复电压TRV波形进行了仿真,其结果符合预期要求,故可以实施。

  14. 750 kV断路器现场交流耐压试验系统研究与应用%Site AC Voltage Withstand Test System Study and Application of 750 kV Circuit Breakers

    Institute of Scientific and Technical Information of China (English)

    温定筠; 乔立凤; 江峰; 王成生; 孙亚明; 吕景顺

    2013-01-01

      介绍了750 kV断路器现场交流耐压试验的标准和时序,分析了基于串联谐振原理的试验方法及试验系统中各设备的具体参数。在此基础上配置出成套的750 kV断路器现场交流耐压试验系统,通过实例成功完成了750 kV断路器主回路及断口的交流耐压试验。%  Introduction was made to the standard and time sequence of site AC voltage withstand test of 750 kV circuit breakers. Analysis was made to the test methods based on serial resonance principle and actual parameters of different equipment in test system. On the basis of this, the site AC voltage withstand test system of a set of 750 kV circuit breakers was disposed. The actual example shows that the AC voltage withstand test for the main circuit and breaking outlet of 750 kV circuit breakers could be completed successfully.

  15. Improve the open-circuit voltage of ZnO solar cells with inserting ZnS layers by two ways

    Science.gov (United States)

    Sun, Yunfei; Yang, Jinghai; Yang, Lili; Cao, Jian; Gao, Ming; Zhang, Zhiqiang; Wang, Zhe; Song, Hang

    2013-04-01

    ZnS NPs layers were deposited on ZnO NRs by two different ways. One is spin coating; the other is successive ionic layer adsorption and reaction (SILAR) method. The ZnO NRs/ZnS NPs composites were verified by X-ray diffraction, X-ray photoelectron spectroscopy, and UV-visible spectrophotometer; their morphologies and thicknesses were examined by scanning electron microscopic and transmission electron microscopic images. The CdS quantum dot sensitized solar cells (QDSSCs) were constructed using ZnO NRs/ZnS NPs composites as photoanode and their photovoltaic characteristic was studied by J-V curves. The results indicated that the way of SILAR is more beneficial for retarding the back transfer of electrons to CdS and electrolyte than spin coating method. The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method. When ZnS NPs layer was deposited for 10 times on ZnO NRs, the conversion efficiency of QDSSC shows ˜3.3 folds increments of as-synthesized ZnO solar cell.

  16. A study on the dependency of the open-circuit voltage on temperature and actual aging state of lithium-ion batteries

    Science.gov (United States)

    Farmann, Alexander; Sauer, Dirk Uwe

    2017-04-01

    The knowledge of nonlinear monotonic correlation between State-of-Charge (SoC) and open-circuit voltage (OCV) is necessary for an accurate battery state estimation in battery management systems. Among the main factors influencing the OCV behavior of lithium-ion batteries (LIBs) are aging, temperature and previous history of the battery. In order to develop an accurate OCV-based SoC estimator, it is necessary that the OCV behavior of the LIBs is sufficiently investigated and understood. In this study, the impact of the mentioned factors on OCV of LIBs at different aging states using various active materials (C/NMC, C/LFP, LTO/NMC) is investigated over a wide temperature range (from -20 °C to +45 °C) comprehensively. It is shown that temperature and aging of the battery influence the battery's relaxation behavior significantly where a linear dependence between the required relaxation time and the temperature can be assumed. Moreover, the required relaxation time increases with decreasing SoC and temperature. Furthermore, we state that for individual LIB, the OCV and the OCV hysteresis change over the battery lifetime. Based on the obtained results a simplified OCV model considering temperature correction term and aging of the battery is proposed.

  17. Fine Tuning of Open-Circuit Voltage by Chlorination in Thieno[3,4- b ]thiophene–Benzodithiophene Terpolymers toward Enhanced Solar Energy Conversion

    Energy Technology Data Exchange (ETDEWEB)

    Qu, Shiwei; Wang, Huan; Mo, Daize; Chao, Pengjie; Yang, Zhen; Li, Longji; Tian, Leilei; Chen, Wei [Materials; Institute; He, Feng

    2017-06-22

    A new family of thieno[3,4-b]thiophene benzodithiophene terpolymers (PBTClx) have been designed and synthesized, in which the chlorine/fluorine content has been adjusted and optimized. As the content of chlorine is increased in polymers, the twist angle between the donor and acceptor is increased, which leads to a diminishment in the planarity and conjugation. As a result, the UV vis absorption is continuous blue-shifted, and the band gap increases from 1.57 to 2.04 eV when the chlorinated moieties increased from 0 to 100%. The highest occupied molecular orbital (HOMO) levels of those polymers are decreased by increasing the content of chlorinated moiety, which opens a window to constantly modify the V-oc values and eventually meets a balance point for optimized solar energy conversion. The highest power conversion efficiency of 8.31% is obtained by using PBTCl25 as the donor and PC71BM as the acceptor in polymer solar cells (PSCs), in which the Voc increased from 0.79 to 0.82 V after 25% chlorinated monomer involved in copolymerization. Herein, the chlorine replacement could be a good method to further pump the solar conversion by increasing the open circuit voltage without reducing other factors of the polymer solar cells.

  18. Crucial Role of the Electron Transport Layer and UV Light on the Open-Circuit Voltage Loss in Inverted Organic Solar Cells.

    Science.gov (United States)

    Tournebize, Aurélien; Mattana, Giorgio; Gorisse, Thérèse; Bousquet, Antoine; Wantz, Guillaume; Hirsch, Lionel; Chambon, Sylvain

    2017-10-04

    Understanding the degradation mechanisms in organic photovoltaics is crucial in order to develop stable organic semiconductors and robust device architectures. The rapid loss of efficiency, referred to as burn-in, is a major issue to be addressed. This study reports on the influence of the electron transport layer (ETLs) and UV light on the drop of open-circuit voltage (Voc) for P3HT:PC60BM-based devices. The results show that Voc loss is induced by the UV and, more importantly, that the ETL can amplify it, with TiOx yielding a stronger drop than ZnO. Using impedance spectroscopy (IS) and X-ray photoelectron spectroscopy (XPS), different degradation mechanisms were identified according to whether the ETL is TiOx or ZnO. For TiOx-based devices, the formation of an interface dipole was identified, resulting in a loss of the flat-band potential (Vfb) and, thus, of the Voc. For ZnO-based devices, chemical modifications of the metal oxide and active layer at the interface were detected, resulting in a doping of the active layer which impacts the Voc. This study highlights the role of the architecture and, more specifically, of the ETL in the severity of burn-in and degradation pathways.

  19. Finding the lost open-circuit voltage in polymer solar cells by UV-ozone treatment of the nickel acetate anode buffer layer.

    Science.gov (United States)

    Wang, Fuzhi; Sun, Gang; Li, Cong; Liu, Jiyan; Hu, Siqian; Zheng, Hua; Tan, Zhan'ao; Li, Yongfang

    2014-06-25

    Efficient polymer solar cells (PSCs) with enhanced open-circuit voltage (Voc) are fabricated by introducing solution-processed and UV-ozone (UVO)-treated nickel acetate (O-NiAc) as an anode buffer layer. According to X-ray photoelectron spectroscopy data, NiAc partially decomposed to NiOOH during the UVO treatment. NiOOH is a dipole species, which leads to an increase in the work function (as confirmed by ultraviolet photoemission spectroscopy), thus benefitting the formation of ohmic contact between the anode and photoactive layer and leading to increased Voc. In addition, the UVO treatment improves the wettability between the substrate and solvent of the active layer, which facilitates the formation of an upper photoactive layer with better morphology. Further, the O-NiAc layer can decrease the series resistance (Rs) and increase the parallel resistance (Rp) of the devices, inducing enhanced Voc in comparison with the as-prepared NiAc-buffered control devices without UVO treatment. For PSCs based on the P3HT:PCBM system, Voc increases from 0.50 to 0.60 V after the NiAc buffer layer undergoes UVO treatment. Similarly, in the P3HT:ICBA system, the Voc value of the device with a UVO-treated NiAc buffer layer increases from 0.78 to 0.88 V, showing an enhanced power conversion efficiency of 6.64%.

  20. Experimental verification of an equivalent circuit for the characterization of electrothermal micropumps: high pumping velocities induced by the external inductance at driving voltages below 5 V.

    Science.gov (United States)

    Stubbe, Marco; Gyurova, Anna; Gimsa, Jan

    2013-02-01

    Electrothermal micropumps (ETμPs) use local heating to create conductivity and permittivity gradients in the pump medium. In the presence of such gradients, an external AC electric field influences smeared spatial charges in the bulk of the medium. When there is also a symmetry break, the field-charge interaction results in an effective volumetric force resulting in medium pumping. The advantages of the ETμP principle are the absence of moving parts, the opportunity to passivate all the pump structures, homogeneous pump-channel cross-sections, as well as force plateaus in broad frequency ranges. The ETμPs consisted of a DC-heating element and AC field electrodes arranged in a 1000 μm × 250 μm × 60 μm (length × width × height) channel. They were processed as platinum structures on glass carriers. An equivalent-circuit diagram allowed us to model the frequency-dependent pumping velocities of passivated and nonpassivated ETμPs, which were measured at medium conductivities up to 1.0 S/m in the 300 kHz to 52 MHz frequency range. The temperature distributions within the pumps were controlled by thermochromic beads. Under resonance conditions, an additional inductance induced a tenfold pump-velocity increase to more than 50 μm/s at driving voltages of 5 V(rms). A further miniaturization of the pumps is viewed as quite feasible.

  1. Distribution of Local Open-Circuit Voltage on Amorphous and Nanocrystalline Mixed-Phase Si:H and SiGe:H Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C.-S.; Moutinho, H. R.; Al-Jassim, M. M.; Kazmerski, L. L.; Yan, B.; Owens, J. M.; Yang, J.; Guha, S.

    2006-05-01

    Local open-circuit voltage (Voc) distributions on amorphous and nanocrystalline mixed-phase silicon solar cells were measured using a scanning Kelvin probe microscope (SKPM) on the p layer of an n-i-p structure without the top ITO contact. During the measurement, the sample was illuminated with a laser beam that was used for the atomic force microscopy (AFM). Therefore, the surface potential measured by SKPM is the sum of the local Voc and the difference in workfunction between the p layer and the AFM tip. Comparing the SKPM and AFM images, we find that nanocrystallites aggregate in the amorphous matrix with an aggregation size of {approx}0.5 ..mu..m in diameter, where many nanometer-size grains are clustered. The Voc distribution shows valleys in the nanocrystalline aggregation area. The transition from low to high Voc regions is a gradual change within a distance of about 1 ..mu..m. The minimum Voc value in the nanocrystalline clusters in the mixed-phase region is larger than the Voc of a nc-Si:H single-phase solar cell. These results could be due to lateral photo-charge redistribution between the two phases. We have also carried out local Voc measurements on mixed-phase SiGe:H alloy solar cells. The magnitudes of Voc in the amorphous and nanocrystalline regions are consistent with the J-V measurements.

  2. Mechanical Fault Diagnosis of High Voltage Circuit Breakers with Unknown Fault Type Using Hybrid Classifier Based on LMD and Time Segmentation Energy Entropy

    Directory of Open Access Journals (Sweden)

    Nantian Huang

    2016-09-01

    Full Text Available In order to improve the identification accuracy of the high voltage circuit breakers’ (HVCBs mechanical fault types without training samples, a novel mechanical fault diagnosis method of HVCBs using a hybrid classifier constructed with Support Vector Data Description (SVDD and fuzzy c-means (FCM clustering method based on Local Mean Decomposition (LMD and time segmentation energy entropy (TSEE is proposed. Firstly, LMD is used to decompose nonlinear and non-stationary vibration signals of HVCBs into a series of product functions (PFs. Secondly, TSEE is chosen as feature vectors with the superiority of energy entropy and characteristics of time-delay faults of HVCBs. Then, SVDD trained with normal samples is applied to judge mechanical faults of HVCBs. If the mechanical fault is confirmed, the new fault sample and all known fault samples are clustered by FCM with the cluster number of known fault types. Finally, another SVDD trained by the specific fault samples is used to judge whether the fault sample belongs to an unknown type or not. The results of experiments carried on a real SF6 HVCB validate that the proposed fault-detection method is effective for the known faults with training samples and unknown faults without training samples.

  3. Efficient Planar Perovskite Solar Cells with Reduced Hysteresis and Enhanced Open Circuit Voltage by Using PW12-TiO2 as Electron Transport Layer.

    Science.gov (United States)

    Huang, Chun; Liu, Canjun; Di, Yunxiang; Li, Wenzhang; Liu, Fangyang; Jiang, Liangxing; Li, Jie; Hao, Xiaojing; Huang, Haitao

    2016-04-06

    An electron transport layer is essential for effective operation of planar perovskite solar cells. In this Article, PW12-TiO2 composite was used as the electron transport layer for the planar perovskite solar cell in the device structure of fluorine-doped tin oxide (FTO)-glass/PW12-TiO2/perovskite/spiro-OMeTAD/Au. A proper downward shift of the conduction band minimum (CBM) enhanced electron extraction from the perovskite layer to the PW12-TiO2 composite layer. Consequently, the common hysteresis effect in TiO2-based planar perovskite solar cells was significantly reduced and the open circuit voltage was greatly increased to about 1.1 V. Perovskite solar cells using the PW12-TiO2 compact layer showed an efficiency of 15.45%. This work can contribute to the studies on the electron transport layer and interface engineering for the further development of perovskite solar cells.

  4. Benzotriazole-bridged sensitizers containing a furan moiety for dye-sensitized solar cells with high open-circuit voltage performance.

    Science.gov (United States)

    Mao, Jiangyi; Guo, Fuling; Ying, Weijiang; Wu, Wenjun; Li, Jing; Hua, Jianli

    2012-05-01

    Two new benzotriazole-bridged sensitizers are designed and synthesized (BTA-I and BTA-II) containing a furan moiety for dye-sensitized solar cells (DSSCs). Two corresponding dyes (BTA-III and BTA-IV) with a thiophene spacer were also synthesized for comparison. All of these dyes performed as sensitizers for DSSCs, and the photovoltaic performance data of these benzotriazole-bridged dyes showed a high open-circuit voltage (V(oc): 804-834 mV). Among the four dyes, DSSCs based on BTA-II, with a furan moiety and branched alkyl chain, showed the highest V(oc) (834 mV), a photocurrent density (J(sc)) of 12.64 mA cm(-2), and a fill factor (FF) of 0.64, corresponding to an overall conversion efficiency (η) of 6.72%. Most importantly, long-term stability of the BTA-I-IV-based DSSCs with ionic-liquid electrolytes under 1000 h light-soaking was demonstrated, and BTA-II exhibited better photovoltaic performance of up to 5.06% power conversion efficiency.

  5. Open-Circuit Voltage in Organic Solar Cells: The Impacts of Donor Semicrystallinity and Coexistence of Multiple Interfacial Charge-Transfer Bands

    KAUST Repository

    Ndjawa, Guy O. Ngongang

    2017-01-16

    In organic solar cells (OSCs), the energy of the charge-transfer (CT) complexes at the donor-acceptor interface, E , determines the maximum open-circuit voltage (V ). The coexistence of phases with different degrees of order in the donor or the acceptor, as in blends of semi-crystalline donors and fullerenes in bulk heterojunction layers, influences the distribution of CT states and the V enormously. Yet, the question of how structural heterogeneities alter CT states and the V is seldom addressed systematically. In this work, we combine experimental measurements of vacuum-deposited rubrene/C bilayer OSCs, with varying microstructure and texture, with density functional theory calculations to determine how relative molecular orientations and extents of structural order influence E and V . We find that varying the microstructure of rubrene gives rise to CT bands with varying energies. The CT band that originates from crystalline rubrene lies up to ≈0.4 eV lower in energy compared to the one that arises from amorphous rubrene. These low-lying CT states contribute strongly to V losses and result mainly from hole delocalization in aggregated rubrene. This work points to the importance of realizing interfacial structural control that prevents the formation of low E configurations and maximizes V .

  6. CdTe Nanocrystal Hetero-Junction Solar Cells with High Open Circuit Voltage Based on Sb-doped TiO₂ Electron Acceptor Materials.

    Science.gov (United States)

    Li, Miaozi; Liu, Xinyan; Wen, Shiya; Liu, Songwei; Heng, Jingxuan; Qin, Donghuan; Hou, Lintao; Wu, Hongbin; Xu, Wei; Huang, Wenbo

    2017-05-03

    We propose Sb-doped TiO₂ as electron acceptor material for depleted CdTe nanocrystal (NC) hetero-junction solar cells. Novel devices with the architecture of FTO/ZnO/Sb:TiO₂/CdTe/Au based on CdTe NC and TiO₂ precursor are fabricated by rational ambient solution process. By introducing TiO₂ with dopant concentration, we are able to tailor the optoelectronic properties of NC solar cells. Our novel devices demonstrate a very high open circuit voltage of 0.74 V, which is the highest Voc reported for any CdTe NC based solar cells. The power conversion efficiency (PCE) of solar cells increases with the increase of Sb-doped content from 1% to 3%, then decreases almost linearly with further increase of Sb content due to the recombination effect. The champion device shows Jsc, Voc, FF, and PCE of 14.65 mA/cm², 0.70 V, 34.44, and 3.53% respectively, which is prospective for solution processed NC solar cells with high Voc.

  7. Mechanical Fault Diagnosis of High Voltage Circuit Breakers Based on Wavelet Time-Frequency Entropy and One-Class Support Vector Machine

    Directory of Open Access Journals (Sweden)

    Nantian Huang

    2015-12-01

    Full Text Available Mechanical faults of high voltage circuit breakers (HVCBs are one of the most important factors that affect the reliability of power system operation. Because of the limitation of a lack of samples of each fault type; some fault conditions can be recognized as a normal condition. The fault diagnosis results of HVCBs seriously affect the operation reliability of the entire power system. In order to improve the fault diagnosis accuracy of HVCBs; a method for mechanical fault diagnosis of HVCBs based on wavelet time-frequency entropy (WTFE and one-class support vector machine (OCSVM is proposed. In this method; the S-transform (ST is proposed to analyze the energy time-frequency distribution of HVCBs’ vibration signals. Then; WTFE is selected as the feature vector that reflects the information characteristics of vibration signals in the time and frequency domains. OCSVM is used for judging whether a mechanical fault of HVCBs has occurred or not. In order to improve the fault detection accuracy; a particle swarm optimization (PSO algorithm is employed to optimize the parameters of OCSVM; including the window width of the kernel function and error limit. If the mechanical fault is confirmed; a support vector machine (SVM-based classifier will be used to recognize the fault type. The experiments carried on a real SF6 HVCB demonstrated the improved effectiveness of the new approach.

  8. Investigation of electron behavior in Nano-TiO2 photocatalysis by using in situ open-circuit voltage and photoconductivity measurements.

    Science.gov (United States)

    Liu, Baoshun; Wang, Xuelei; Wen, Liping; Zhao, Xiujian

    2013-08-05

    The in situ open-circuit voltages (Voc ) and the in situ photoconductivities have been measured to study electron behavior in photocatalysis and its effect on the photocatalytic oxidation of methanol. It was observed that electron injection to the conduction band (CB) of TiO2 under light illumination during photocatalysis includes two sources: from the valence band (VB) of TiO2 and from the methanol molecule. The electron injection from methanol to TiO2 is slower than that directly from the VB, which indicates that the adsorption mode of methanol on the TiO2 surface can change between dark and illuminated states. The electron injection from methanol to the CB of TiO2 leads to the upshift of the Fermi level of electrons in TiO2 , which is the thermodynamic driving force of photocatalytic oxidation. It was also found that the charge state of nano-TiO2 is continuously changing during photocatalysis as electrons are injected from methanol to TiO2 . Combined with the apparent Langmuir-Hinshelwood kinetic model, the relation between photocatalytic kinetics and electrons in the TiO2 CB was developed and verified experimentally. The photocatalytic rate constant is the variation of the Fermi level with time, based on which a new method was developed to calculate the photocatalytic kinetic rate constant by monitoring the change of Voc with time during photocatalysis.

  9. Increasing the open-circuit voltage in high-performance organic photovoltaic devices through conformational twisting of an indacenodithiophene-based conjugated polymer.

    Science.gov (United States)

    Chen, Chih-Ping; Hsu, Hsiang-Lin

    2013-10-01

    A fused ladder indacenodithiophene (IDT)-based donor-acceptor (D-A)-type alternating conjugated polymer, PIDTHT-BT, presenting n-hexylthiophene conjugated side chains is prepared. By extending the degree of intramolecular repulsion through the conjugated side chain moieties, an energy level for the highest occupied molecular orbital (HOMO) of -5.46 eV--a value approximately 0.27 eV lower than that of its counterpart PIDTDT-BT--is obtained, subsequently providing a fabricated solar cell with a high open-circuit voltage of approximately 0.947 V. The hole mobility (determined using the space charge-limited current model) in a blend film containing 20 wt% PIDTHT-BT) and 80 wt% [6,6]-phenyl-C71 butyric acid methyl ester (PC71 BM) is 2.2 × 10(-9) m(2) V(-1) s(-1), which is within the range of reasonable values for applications in organic photovoltaics. The power conversion efficiency is 4.5% under simulated solar illumination (AM 1.5G, 100 mW cm(-2)).

  10. Simultaneous Increase in Open-Circuit Voltage and Efficiency of Fullerene-Free Solar Cells through Chlorinated Thieno[3,4- b ]thiophene Polymer Donor

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Huan [Department; Chao, Pengjie [Department; Chen, Hui [Department; Mu, Zhao [Department; Chen, Wei [Materials; Institute; He, Feng [Department

    2017-08-09

    The chlorinated polymer, PBTCl, has been found to be an efficient donor in nonfullerene polymer solar cells (PSCs), which showed a blue-shifted absorbance compared to that of its fluorine analogue (PTB7-th) and resulted in more complementary light absorption with a nonfullerene acceptor, such as ITIC. Meanwhile, chlorine substitution lowered the HOMO level of PBTCl, which increased the open-circuit voltage of the corresponding polymer-based devices. The 2D GIWAXS analysis illustrated that the PBTCl/ITIC blend film exhibited a “face-on” orientation and scattering features of both PBTCl and ITIC, suggesting that the blend of PBTCl and ITIC was phase-separated and formed individual crystalline domains of the donor and acceptor, which promoted charge transfer in the bicontinuous film and eventually elevated the solar energy conversion efficiency. The PBTCl-based nonfullerene PSC exhibited a maximum PCE of 7.57% with a Voc of 0.91 V, which was an approximately 13% increasing in the PCE compared to that of the fluorine-analogue-based device.

  11. Design of wide output voltage AC-DC power supply based on buck-boost circuit%基于Buck-Boost电路的宽输出电压AC-DC电源设计

    Institute of Scientific and Technical Information of China (English)

    徐文城; 刘尧; 王秀荣

    2012-01-01

    设计了一种宽输出电压的AC DC开关电源,其主要特征是输出电压可以在较大范围内任意调节,解决了传统的开关电源只能输出几个特定电压值的问题.该设计的核心是反激变换电路和Buck-Boost电路.分析了这两种电路的工作原理及其应用,并且给出了具体的设计.实验表明,设计的电源能较好地实现了输出电压的宽范围调节.%AC-DC switching power supply with a wide range voltage output was designed. Its main feature is that the output voltage can be adjusted in a wide range. The problem that the traditional switching power supplies only have few specific voltage outputs is solved in the design. The flyback convert circuit and Buck-Boost circuit are the cores of the design. The working principle and applications of these two circuits are analyzed. The concrete design is given in this paper. The experiments show that a wide range regulation of the output voltage has been more successfully achieved in the design of the power supply.

  12. 多电平变换器直流侧电压平衡控制电路%DC Bus Capacitor Voltage Balancing Circuits in Diode-Clamped Multilevel Converter

    Institute of Scientific and Technical Information of China (English)

    丁娜; 舒泽亮

    2014-01-01

    为解决二极管箝位型多电平变换器直流侧电容电压不平衡的问题,设计了一种带二级辅助电感的平衡控制电路,通过简单控制可以平衡多电平变换器直流侧所有电容的电压。在分析电路结构和控制原理的基础上,从能量转换的角度出发,给出了辅助电感参数选择的范围。以五电平变换器为研究对象,建立了Matlab/Simulink仿真模型,搭建了实验样机,对比分析了本文平衡电路与传统一级平衡控制电路的电容电压平衡特性。实验结果表明,当二级辅助电路工作时,所有直流侧电容电压在20 ms内达到平衡,电容电压的纹波小于3%。%In order to solve the imbalance of DC bus capacitor voltages in the diode-clamped multilevel converter,a balancing circuit with two-layer auxiliary inductors was designed. With this circuit,the voltages of all the DC-side capacitors in the multilevel converter can be balanced by a simple control. On the basis of analysis of the circuit structure and control principle,the ranges of inductor parameters were analyzed from the viewpoint of energy conversion. Taking a five-level converter as an example,a Matlab/Simulink simulation model and an experimental prototype were built,and the balance characteristics of DC bus capacitor voltages were compared between the proposed two-layer auxiliary circuit and the traditional one-layer circuit. Experimental results verify that the proposed two-layer circuit could effectively balance all the DC bus capacitor voltages within 20 ms,and the capacitor voltage ripple was less than 3%.

  13. 基于MCU控制的开关电源稳压电路设计%Design for voltage regulator circuit of switching power supply based on MCU control

    Institute of Scientific and Technical Information of China (English)

    李淑红; 邢军

    2015-01-01

    A voltage regulator circuit of the switching power supply based on MCU control was designed,which is com-posed of rectification filtering circuit,push-pull power conversion circuit and control circuit. In this circuit,the output voltage of the switching power supply is controlled by regulating PWM via the MCU. The digital signal output by MCU is converted into analog signal through the DAC0832. The analog signal is taken as the reference voltage of the second pin of the switching con-trol chip SG3525. SG3525 generates PWM control pulse automatically according to the variation of reference voltage to regulate the output pulse width of the switching tube,so the purpose of regulating the output voltage is achieved. The experimental re-sults show that the output voltage adjustable range is 28~36 V,the maximum output current is 15 A,and the efficiency of the switching power supply is 89%.%设计了一款基于MCU控制的开关电源稳压电路,该系统主要由整流滤波电路、推挽式功率变换电路和控制电路组成,并通过MCU调节PWM控制开关电源输出电压.MCU输出的数字信号通过DAC0832转换为模拟信号,该模拟信号作为开关控制芯片SG3525第二管脚的基准电压,SG3525根据基准电压的变化自动产生PWM控制脉冲,调节开关管的输出脉宽,从而达到调节输出电压的目的.实验表明,输出电压可调范围为28~36 V,最大输出电流Imax=15 A,开关电源的效率为η=89%.

  14. Performance Analysis and Test of Noise in Differential Capacitance to Voltage Conversion Circuit%差分电容电压转换电路噪声性能分析及测试

    Institute of Scientific and Technical Information of China (English)

    张霞; 胡世昌; 朱辉杰

    2011-01-01

    本文对电容检测式加速度计系统中广泛采用的差分电容电压转换电路建立了电容电压转换电路的等效噪声模型,并对双运放集成电路芯片所构成的差分电容电压转换电路的本底噪声以及仪表放大器输出端的噪声进行了测试,将电容电压转换电路本底噪声中的差模噪声分量和共模噪声分量进行了分离.测试结果表明影响加速度计系统噪声性能的差模噪声分量占电容电压转换电路本底噪声的50%.%This paper presents an equivalent noise model of differential capacitance to voltage conversion circuit which is widely used in capacitive sensing accelerometers. The noise floors of the capacitance to voltage conversion circuit realized by dual amplifiers (two in a package) and the instrumentation amplifier are measured. The common-mode noise and the difference-mode noise in the noise floor of the capacitance to voltage conversion circuit can be calculated. The test results show that the difference-mode noise, which would affect the resolution of the capacitive sensing accelerometer system, constitutes nearly half the noise floor of the capacitance to voltage conversion circuit.

  15. Assessment of image quality and low-contrast detectability in abdominal CT of obese patients: comparison of a novel integrated circuit with a conventional discrete circuit detector at different tube voltages

    Energy Technology Data Exchange (ETDEWEB)

    Euler, A.; Heye, T.; Kekelidze, M.; Bongartz, G.; Schindera, Sebastian T. [University of Basel Hospital, Clinic of Radiology and Nuclear Medicine, Basel (Switzerland); Szucs-Farkas, Z. [Hospital Centre of Biel, Institute of Radiology, Biel (Switzerland); Sommer, C. [University Hospital, Department of Diagnostic and Interventional Radiology, Heidelberg (Germany); Schmidt, B. [Siemens Healthcare Sector, Forchheim (Germany)

    2014-10-15

    To compare image quality and low-contrast detectability of an integrated circuit (IC) detector in abdominal CT of obese patients with conventional detector technology at low tube voltages. A liver phantom with 45 lesions was placed in a water container to mimic an obese patient and examined on two different CT systems at 80, 100 and 120 kVp. The systems were equipped with either the IC or conventional detector. Image noise was measured, and the contrast-to-noise-ratio (CNR) was calculated. Low-contrast detectability was assessed independently by three radiologists. Radiation dose was estimated by the volume CT dose index (CTDI{sub vol}). The image noise was significantly lower, and the CNR was significantly higher with the IC detector at 80, 100 and 120 kVp, respectively (P = 0.023). The IC detector resulted in an increased lesion detection rate at 80 kVp (38.1 % vs. 17.2 %) and 100 kVp (57.0 % vs. 41.0 %). There was no difference in the detection rate between the IC detector at 100 kVp and the conventional detector at 120 kVp (57.0 % vs. 62.2 %). The CTDI{sub vol} at 80, 100 and 120 kVp measured 4.5-5.2, 7.3-7.9 and 9.8-10.2 mGy, respectively. The IC detector at 100 kVp resulted in similar low-contrast detectability compared to the conventional detector with a 120-kVp protocol at a radiation dose reduction of 37 %. (orig.)

  16. Allele-dependent changes of olivocerebellar circuit properties in the absence of the voltage-gated potassium channels Kv3.1 and Kv3.3.

    Science.gov (United States)

    McMahon, Anne; Fowler, Stephen C; Perney, Teresa M; Akemann, Walther; Knöpfel, Thomas; Joho, Rolf H

    2004-06-01

    Double-mutant mice (DKO) lacking the two voltage-gated K(+) channels Kv3.1 and Kv3.3 display a series of phenotypic alterations that include ataxia, myoclonus, tremor and alcohol hypersensitivity. The prominent cerebellar expression of mRNAs encoding Kv3.1 and Kv3.3 subunits raised the question as to whether altered electrical activity resulting from the lack of these K(+) channels might be related to the dramatic motor changes. We used the tremorogenic agent harmaline to probe mutant mice lacking different K(+) channel alleles for altered olivocerebellar circuit properties. Harmaline induced the characteristic 13-Hz tremor in wildtype mice (WT); however, no tremor was observed in DKO suggesting that the ensemble properties of the olivocerebellar circuitry are altered in the absence of Kv3.1 and Kv3.3 subunits. Harmaline induced tremor in Kv3.1-single mutants, but it was of smaller amplitude and at a lower frequency indicating the participation of Kv3.1 subunits in normal olivocerebellar system function. In contrast, harmaline tremor was virtually absent in Kv3.3-single mutants indicating an essential role for Kv3.3 subunits in tremor induction by harmaline. Immunohistochemical staining for Kv3.3 showed clear expression in the somata and proximal dendrites of Purkinje cells and in their axonal projections to the deep cerebellar nuclei (DCN). In DCN, both Kv3.1 and Kv3.3 subunits are expressed. Action potential duration is increased by approximately 100% in Purkinje cells from Kv3.3-single mutants compared to WT or Kv3.1-single mutants. We conclude that Kv3.3 channel subunits are essential for the olivocerebellar system to generate and sustain normal harmaline tremor whereas Kv3.1 subunits influence tremor amplitude and frequency.

  17. Multifunctional Iodide-Free Polymeric Ionic Liquid for Quasi-Solid-State Dye-Sensitized Solar Cells with a High Open-Circuit Voltage.

    Science.gov (United States)

    Lin, Yi-Feng; Li, Chun-Ting; Lee, Chuan-Pei; Leu, Yow-An; Ezhumalai, Yamuna; Vittal, R; Chen, Ming-Chou; Lin, Jiang-Jen; Ho, Kuo-Chuan

    2016-06-22

    A polymeric ionic liquid, poly(oxyethylene)-imide-imidazolium selenocyanate (POEI-IS), was newly synthesized and used for a multifunctional gel electrolyte in a quasi-solid-state dye-sensitized solar cell (QSS-DSSC). POEI-IS has several functions: (a) acts as a gelling agent for the electrolyte of the DSSC, (b) possesses a redox mediator of SeCN(-), which is aimed to form a SeCN(-)/(SeCN)3(-) redox couple with a more positive redox potential than that of traditional I(-)/I3(-), (c) chelates the potassium cations through the lone pair electrons of the oxygen atoms of its poly(oxyethylene)-imide-imidazolium (POEI-I) segments, and (d) obstructs the recombination of photoinjected electrons with (SeCN)3(-) ions in the electrolyte through its POEI-I segments. Thus, the POEI-IS renders a high open-circuit voltage (VOC) to the QSS-DSSC due to its functions of b-d and prolongs the stability of the cell due to its function of a. The QSS-DSSC with the gel electrolyte containing 30 wt % of the POEI-IS in liquid selenocyanate electrolyte exhibited a high VOC of 825.50 ± 3.51 mV and a high power conversion efficiency (η) of 8.18 ± 0.02%. The QSS-DSSC with 30 wt % POEI-IS retained up to 95% of its initial η after an at-rest stability test with the period of more than 1,000 h.

  18. Distribution of Local Open-Circuit Voltage on Amorphous and Nanocrystalline Mixed-Phase Si:H and SiGe:H Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C.-S.; Moutinho, H. R.; Al-Jassim, M. M.; Kazmerski, L. L.; Yan, B.; Owens, J. M.; Yang, J.; Guha, S.

    2006-01-01

    Local open-circuit voltage (V{sub oc}) distributions on amorphous and nanocrystalline mixed-phase silicon solar cells were measured using a scanning Kelvin probe microscope (SKPM) on the p layer of an n-i-p structure without the top ITO contact. During the measurement, the sample was illuminated with a laser beam that was used for the atomic force microscopy (AFM). Therefore, the surface potential measured by SKPM is the sum of the local V{sub oc} and the difference in workfunction between the p layer and the AFM tip. Comparing the SKPM and AFM images, we find that nanocrystallites aggregate in the amorphous matrix with an aggregation size of {approx}0.5 {micro}m in diameter, where many nanometer-size grains are clustered. The V{sub oc} distribution shows valleys in the nanocrystalline aggregation area. The transition from low to high V{sub oc} regions is a gradual change within a distance of about 1 {micro}m. The minimum V{sub oc} value in the nanocrystalline clusters in the mixed-phase region is larger than the V{sub oc} of a nc-Si:H single-phase solar cell. These results could be due to lateral photo-charge redistribution between the two phases. We have also carried out local V{sub oc} measurements on mixed-phase SiGe:H alloy solar cells. The magnitudes of V{sub oc} in the amorphous and nanocrystalline regions are consistent with the J-V measurements.

  19. Enhancement of open-circuit voltage and the fill factor in CdTe nanocrystal solar cells by using interface materials.

    Science.gov (United States)

    Zhu, Jiaoyan; Yang, Yuehua; Gao, Yuping; Qin, Donghuan; Wu, Hongbin; Hou, Lintao; Huang, Wenbo

    2014-09-12

    Interface states influence the operation of nanocrystal (NC) solar cell carrier transport, recombination and energetic mechanisms. In a typical CdTe NC solar cell with a normal structure of a ITO/p-CdTe NCs/n-acceptor (or without)/Al configuration, the contact between the ITO and CdTe is a non-ohm contact due to a different work function (for an ITO, the value is ~4.7 eV, while for CdTe NCs, the value is ~5.3 eV), which results in an energetic barrier at the ITO/CdTe interface and decreases the performance of the NC solar cells. This work investigates how interface materials (including Au, MoO(x) and C₆₀) affect the performance of NC solar cells. It is found that devices with interface materials have shown higher V(oc) than those without interface materials. For the case in which we used Au as an interface, we obtained a high open-circuit voltage of 0.65 V, coupled with a high fill factor (62%); this resulted in a higher energy conversion efficiency (ECE) of 5.3%, which showed a 30% increase in the ECE compared with those without the interlayer. The capacitance measurements indicate that the increased V(oc) in the case in which Au was used as the interface is likely due to good ohm contact between the Au's and the CdTe NCs' thin film, which decreases the energetic barrier at the ITO/CdTe interface.

  20. Probing the Energy Level Alignment and the Correlation with Open-Circuit Voltage in Solution-Processed Polymeric Bulk Heterojunction Photovoltaic Devices.

    Science.gov (United States)

    Yang, Qing-Dan; Li, Ho-Wa; Cheng, Yuanhang; Guan, Zhiqiang; Liu, Taili; Ng, Tsz-Wai; Lee, Chun-Sing; Tsang, Sai-Wing

    2016-03-23

    Energy level alignment at the organic donor and acceptor interface is a key to determine the photovoltaic performance in organic solar cells, but direct probing of such energy alignment is still challenging especially for solution-processed bulk heterojunction (BHJ) thin films. Here we report a systematic investigation on probing the energy level alignment with different approaches in five commonly used polymer:[6,6]-phenyl-C71-butyric acid methyl ester (PCBM) BHJ systems. We find that by tuning the weight ratio of polymer to PCBM the electronic features from both polymer and PCBM can be obtained by photoemission spectroscopy. Using this approach, we find that some of the BHJ blends simply follow vacuum level alignment, but others show strong energy level shifting as a result of Fermi level pinning. Independently, by measuring the temperature-dependent open-circuit voltage (VOC), we find that the effective energy gap (Eeff), the energy difference between the highest occupied molecular orbital of the polymer donor (EHOMO-D) and lowest unoccupied molecular orbital of the PCBM acceptor (ELUMO-A), obtained by photoemission spectroscopy in all polymer:PCBM blends has an excellent agreement with the extrapolated VOC at 0 K. Consequently, the photovoltage loss of various organic BHJ photovoltaic devices at room temperature is in a range of 0.3-0.6 V. It is believed that the demonstrated direct measurement approach of the energy level alignment in solution-processed organic BHJ will bring deeper insight into the origin of the VOC and the corresponding photovoltage loss mechanism in organic photovoltaic cells.

  1. Simple buck/boost voltage regulator

    Science.gov (United States)

    Paulkovich, J.; Rodriguez, G. E.

    1980-01-01

    Circuit corrects low or high supply voltage, produces regulated output voltage. Circuit has fewer components because inductory/transformer combination and pulse-width modulator serve double duty. Regulator handles input voltage variation from as low as one half output voltage to as high as input transistor rating. Solar arrays, fuel cells, and thermionic generators might use this regulator.

  2. Correctly Understanding and Choosing the Current Parameter of Low-voltage Circuit Breaker%正确理解和选择低压断路器的电流参数

    Institute of Scientific and Technical Information of China (English)

    李远景

    2011-01-01

    低压断路器在配电系统中起着十分重要的作用,低压断路器保护特性的实验加深了学生对理论知识的理解,锻炼了动手能力,对此分析低压断路器的各个电流参数的概念、特性及其作用,帮助从事电气设计、采购、施工和监理工作人员正确理解断路器参数的意义和确定参数,提出更好的意见和建议.%Low-voltage circuit breaker plays a very important role in the distribution system.The experiment of low-voltage circuit breaker deepens students' understanding of theoretical knowledge and practice ability.The concept, feature and function of current parameter of low-voltage breaker are analyzed to help the staff in electrical design, procurement, construction and supervision industry correctly understand the meaning of circuit breaker and the ensuring of the parameters which better suggestions are proposed.

  3. Push-pull type of high-frequency inverter with voltage controllability by using short-circuit mode and its application to high-frequency lighting circuit of electric-discharge lamp. Tanraku modo wo mochiita kaseigyo push pull koshuha inverter to hoden ranpu koshuha tento kairo eno oyo

    Energy Technology Data Exchange (ETDEWEB)

    Funabiki, S.; Komatsubara, H. (Okayama Univ., Okayama (Japan)); Kanbara, T.; Tanigawa, K. (Matsushita Electric Works Ltd., Osaka (Japan))

    1994-04-20

    In recent years, in order to compact the inverter and to make high-function of the inverter used in electric-discharge lamp, the electronic-inverter with high-frequency is improved. There are some problems in the high-frequency inverter that surge and noise occur when switch loss increases and voltage is intermitted abruptly that is caused by the over-voltage at the time of turn-on and turn-off. In this paper, as for voltage resonant type of push-pull high-frequency inverter circuit, a control method using a short-circuit mode actively that turns 2 switches on at the same time in power output control is proposed and the theoretical analysis and practical experiments are carried out. Then, the application of the control method to electric-discharge lamp is studied. As for the comparison of the steady-state characteristics of theoretical analysis with the experiment data, the result shows the both agrees well with each other even though there are some errors caused by the parasitic capacity of the MOSFET being a switch of the circuit. And, a stable output control in a wide range is achieved based on the experiments of the lighting circuit of the electric-discharge lamp. 7 refs., 7 figs., 3 tabs.

  4. Current limiter circuit system

    Energy Technology Data Exchange (ETDEWEB)

    Witcher, Joseph Brandon; Bredemann, Michael V.

    2017-09-05

    An apparatus comprising a steady state sensing circuit, a switching circuit, and a detection circuit. The steady state sensing circuit is connected to a first, a second and a third node. The first node is connected to a first device, the second node is connected to a second device, and the steady state sensing circuit causes a scaled current to flow at the third node. The scaled current is proportional to a voltage difference between the first and second node. The switching circuit limits an amount of current that flows between the first and second device. The detection circuit is connected to the third node and the switching circuit. The detection circuit monitors the scaled current at the third node and controls the switching circuit to limit the amount of the current that flows between the first and second device when the scaled current is greater than a desired level.

  5. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  6. Solid-state circuits

    CERN Document Server

    Pridham, G J

    2013-01-01

    Solid-State Circuits provides an introduction to the theory and practice underlying solid-state circuits, laying particular emphasis on field effect transistors and integrated circuits. Topics range from construction and characteristics of semiconductor devices to rectification and power supplies, low-frequency amplifiers, sine- and square-wave oscillators, and high-frequency effects and circuits. Black-box equivalent circuits of bipolar transistors, physical equivalent circuits of bipolar transistors, and equivalent circuits of field effect transistors are also covered. This volume is divided

  7. Inrush Current Control Circuit

    Science.gov (United States)

    Cole, Steven W. (Inventor)

    2002-01-01

    An inrush current control circuit having an input terminal connected to a DC power supply and an output terminal connected to a load capacitor limits the inrush current that charges up the load capacitor during power up of a system. When the DC power supply applies a DC voltage to the input terminal, the inrush current control circuit produces a voltage ramp at the load capacitor instead of an abrupt DC voltage. The voltage ramp results in a constant low level current to charge up the load capacitor, greatly reducing the current drain on the DC power supply.

  8. 用于开关电源的高精度多基准带隙电压源设计%Design of High-Precision Multi-Bandgap Voltage Reference Circuit for Switching Power Supply

    Institute of Scientific and Technical Information of China (English)

    唐宁; 赵荣建; 李书馨

    2012-01-01

    Based on the analysis of conventional band-gap reference circuit, a novel multi-voltage band-gap reference source for switching power supply was proposed using curvature compensation, high power gain feedback and buffer isolation technologies. The circuit achieved a high power supply rejection ratio (PSRR) and low temperature drift coefficient. Simulation based on 0. 5 μm CMOS technology at process corner TT, showed that, in the temperature range from -25 °C to 150 ℃, the multi-voltage reference circuit had a temperature drift coefficient less than 3×106/℃ and a PSRR of -78 dB, and it was capable of delivering four reference voltages: -3 V, 1. 2 V, 1 V and 0. 2 V.%带隙基准源是开关电源的重要组成部分.在对传统带隙基准源电路进行分析的基础上,结合曲率校正技术、高增益反馈技术和缓冲隔离技术,提出了一款应用于开关电源的高电源抑制比、低温漂系数和多基准输出新型基准源电路.基于0.5μm CMOS工艺,对电路进行仿真.结果表明,在-25℃~150℃范围内和典型(TT)工艺角下,设计的基准源温漂系数小于3×10-6/℃,PSRR为-78 dB,可产生3V,1.2 V,1V,0.2V四个基准输出电压.

  9. Analysis of a Short-Circuit Accident for Low-Voltage Integrated Distribution Box%一起低压综合配电箱短路事故的分析

    Institute of Scientific and Technical Information of China (English)

    朱遵义; 王瑞

    2014-01-01

    Aiming at a short-circuit accident happened during low-voltage integrated distribution box running, this paper analyzed the ac-cident theoretically and carried out calculation and onsite examine, ifnding that when the process chipping, the shift of circuit breakers run-ning shaking caused the short-circuit accident. Because there was non anti-arc board installed between copper bars of inlet wire end of circuit breakers, the accident enlarged. This paper proposed some preventive measures from the aspects of production manufacturing, examine be-fore installation, insulation testing after installation etc.%针对一起低压综合配电箱投入运行时发生的短路事故,对该事故进行了理论分析、计算和现场验证,发现是因加工切屑在断路器投运震动时移位造成短路事故,且由于未在断路器的进线端铜排之间安装隔弧板从而导致事故扩大,并从生产制造、安装前检查、安装后须进行绝缘测试等方面提出了预防措施。

  10. The impact of P(NDI2OD-T2 crystalline domains on the open-circuit voltage of bilayer all-polymer solar cells with an inverted configuration

    Directory of Open Access Journals (Sweden)

    Yu Jin Kim

    2015-12-01

    Full Text Available We fabricated P(NDI2OD-T2/PTB7 bilayer all-polymer solar cells with an inverted configuration, where the annealing temperature was systematically varied. The current density–voltage behavior was investigated and the structural properties of the P(NDI2OD-T2 layers were characterized. Absorption spectroscopy, surface morphology, and crystallite analysis showed that increasing phase segregation of P(NDI2OD-T2 films occurred as the annealing temperature increased. We found that, as the P(NDI2OD-T2 stacking improved, with larger domains, the open-circuit voltage decreased and the saturation dark current density increased. This work provides a guide for the processing of P(NDI2OD-T2 layers to maximize the power conversion efficiency of all-polymer solar cells.

  11. 采用高耦合度分裂电抗器的并联型断路器均流过程研究%Current Dividing Process of Paralleled Circuit Breakers with High Coupled Split Reactor

    Institute of Scientific and Technical Information of China (English)

    袁召; 尹小根; 潘垣; 何俊佳

    2012-01-01

    Focussing on the current sharing process of the paralleled circuit breakers with a high coupled split reactor(HCSR),we put forward the expressions of imbalance current of simply paralleled circuit breakers and the paralleled circuit breakers with HCSR.Conclusions could be drawn that the current limiting reactor and coupling coefficient of HCSR and the arc resistance of the circuit breakers were main factors that affected the current sharing results.In order to prove the onclusions above,the simulation models of HCSR and vacuum/SF6circuit breakers were established to simulate the current sharing of paralleled circuit breakers,and a synthetic circuit test of paralleled circuit breakers was also conducted.The simulation and test results are consistent with the analysis conclusions.The research results give a principle to choose the parameters of HCSR under different types of circuit breakers,and can be used to guide the design of paralleled circuit breakers with HCSR.%为了研究基于高耦合度分裂电抗器(high coupled split reactor,HCSR)的并联型断路器的并联均流效果,推导了简单并联及基于HCSR的并联型断路器并联支路间不平衡电流的表达式,通过分析得出结论:HCSR单臂限流电感、双臂间耦合度、选用的断路器弧阻大小等因素是影响并联型断路器均流效果的主要因素。为验证上述结论,建立了HCSR、真空灭弧室、SF6灭弧室的电路仿真模型,开展了相关仿真分析,并采用合成回路进行了对应断路器并联开断实验。仿真、实验结果与理论分析结果相符合。基于上述研究结果,最终给出了针对不同类型并联断路器的HCSR单臂电感的选取原则,以用于指导新型并联断路器的设计。

  12. New energy management circuit applied in electric self-power supply over high voltage side%新型高压侧自供电电源设计与研究

    Institute of Scientific and Technical Information of China (English)

    李衍川; 江和

    2014-01-01

    分析了高压电场能量收集的原理,建立静电场耦合分布电容模型,并通过实验证明了模型的参考价值。随后,分析使用整流桥电路进行能量管理时的最佳功率点,并从增大超级电容充电电流的角度,设计了一种新型的管理电路,即同步电荷提取电路,以获得最佳的能量存储能力。结果证明存在一个最佳占空比使得收集的能量最大化,从而缩短无线节点在线监测工作周期。%The theory of energy harvested from the high voltage is analyzed, and then the corresponding model of coupling capacitance derived from static electric field is built, and several experiments are conducted to study whether the model is valuable. Then, according to what the result reveals, the optimal power point is found out when energy is managed by rectifier circuit. The value of charged current to super capacitor is used as the judge-ment whether the circuit system has the best storage performance. In that respect, management circuit is improved as a technology called Synchronous Electric Charge Extract, because the rectifier circuit can’ t perform as good as it is under ultrahigh voltage. It turns out that there is an optimal duty to maximize the energy harvested, so that the energy harvester can scavenge much more energy to cancellout the power loss. As a result, online monitoring period could be shortened greatly.

  13. 船用交流中压断路器开断性能相关参数分析%Analysis of Parameters for Breaking Performance of Marine Medium Voltage AC Circuit Breakers

    Institute of Scientific and Technical Information of China (English)

    杨青

    2013-01-01

    According to the characteristics of marine medium voltage power system,the parameters closely related to the breaking performance of medium voltage AC circuit breaker were analyzed.It is shown that the key performance parameters in land standards,such as rated breaking current,making current,power frequency recovery voltage,transient recovery voltage,electrical life and so on,basically meet the marine requirements after conversion. But there are also some individual parameters need to be studied further to decide.%根据船舶中压电力系统的特点,对中压断路器开断性能密切相关的参数进行了分析。结果表明,陆用标准中额定短路开断电流和关合电流、工频恢复电压和瞬态恢复电压、电寿命等参数经过换算、折算,基本上符合船用要求,个别参数是否合适有待进一步研究。

  14. 高频X线机管电压调整电路的工作原理及故障分析%Working Principle and Fault Analysis of Tube Voltage Adjustment Circuit for High-frequency X-ray Machine

    Institute of Scientific and Technical Information of China (English)

    赵祥坤; 于广浩; 李永生

    2013-01-01

    High frequency X-ray machine and power frequency X-ray machine differ from voltage adjusting circuit. SCM TL594 is the core device in voltage adjusting circuit of high -frequency X -ray machine. Its application has a strong representation in high frequency X -ray machine's tube voltage adjustment. The tube voltage and frequency of high frequency X-ray machine are controlled by the output pulse width and frequency of TL594 .The understanding of the operating principle of TL594 not only has certain theory significance for high frequency machine teaching but also practical significance for the high frequency machine troubleshooting.%高频X线机区别于工频X线机的主要电路是管电压调整电路,而单片机TL594又是管电压调整电路中的核心器件,它的应用在高频机管电压调节中具有较强的代表性.TL594是通过改变输出脉宽和频率,直接控制高频X线机X线管电压的高低和频率的大小通过对TL594每一个管脚功能的深入探讨,研究TL594在高频X线管电压调节中的工作原理,将不仅对高频机教学具有一定的理论意义,而且在高频机故障排除中具有较强的实践意义.

  15. Fast-responding short circuit protection system with self-reset for use in circuit supplied by DC power

    Science.gov (United States)

    Burns, Bradley M. (Inventor); Blalock, Norman N. (Inventor)

    2011-01-01

    A short circuit protection system includes an inductor, a switch, a voltage sensing circuit, and a controller. The switch and inductor are electrically coupled to be in series with one another. A voltage sensing circuit is coupled across the switch and the inductor. A controller, coupled to the voltage sensing circuit and the switch, opens the switch when a voltage at the output terminal of the inductor transitions from above a threshold voltage to below the threshold voltage. The controller closes the switch when the voltage at the output terminal of the inductor transitions from below the threshold voltage to above the threshold voltage.

  16. Method for Improve the Design of Diode Voltage Regulator Circuit for Solar Calculator%一种改进太阳能计算器芯片二极管稳压电路设计

    Institute of Scientific and Technical Information of China (English)

    张立荣

    2012-01-01

      For solar energy calculator, the voltage regulator circuit is composed by three PN junction diodes in series. The design may cause some issue:because of the higher Vf for voltage regulator circuit, the voltage of solar energy battery is too higher to arouse voltage can not release in time when sunlight is strong. These issue will lead to calculator can not work well. This paper improve the design of diode voltage regulator circuit. One PN junction diode be changed to shottky diode by change P+mask. So the Vf get more reasonable range than ever. What is more, the impact is researched on thickness of Ti layer and temperature. Finally, it show that this improvement fit our requirement.%  对于太阳能计算器,稳压电路的设计是串联三个PN结二极管以达到稳压目的。这种设计会出现以下问题:当外部光线太强时,太阳能电池板的供电电压较高,而稳压电路由于正向饱和压降过高,不能及时将高电压释放掉,会造成计算器不能正常工作。文章研究了改进二极管稳压电路的设计,通过只变更其中的一层mask(P+),将其中一个PN结二极管改为肖特基二极管,使其正向饱和压降处于一个合理的区间,并且研究了通过该变动后不同的Ti金属厚度以及不同温度对该稳压电路的影响。结果显示该种优化完全符合应用需求。

  17. Bootstrapped Low-Voltage Analog Switches

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper

    1999-01-01

    Novel low-voltage constant-impedance analog switch circuits are proposed. The switch element is a single MOSFET, and constant-impedance operation is obtained using simple circuits to adjust the gate and bulk voltages relative to the switched signal. Low-voltage (1-volt) operation is made feasible...

  18. Analysis of energy quality problems in low voltage circuits; Analise de problemas de qualidade da energia em circuitos de baixa tensao

    Energy Technology Data Exchange (ETDEWEB)

    Oliveira, Hermes R.P.M. de; Jesus, Nelson C. de; Figueiredo, Carlos E.C. [AES Sul, Porto Alegre, RS (Brazil); Batista, Edson L. [Universidade Regional do Noroeste do Estado do Rio Grande do Sul, Inijui, RS (Brazil); Martinez, Manuel L.B. [Universidade Federal de Itajuba (UNIFEI), MG (Brazil)

    2005-12-15

    This article presents an analysis and diagnosis related to a typical commercial consumer with problems of energy quality, supplied by low voltage net. In this direction, after the supplied voltage to have been monitored through specific analysers and careful investigations, it was concluded that the origin of disturbances was located in the consumer systems. The main steps used in the analysis and measurements results are described.

  19. A semiconductor laser excitation circuit

    Energy Technology Data Exchange (ETDEWEB)

    Kaadzunari, O.; Masaty, K.

    1984-03-27

    A semiconductor laser excitation circuit is patented that is designed for operation in a pulsed mode with a high pulse repetition frequency. This circuit includes, in addition to a semiconductor laser, a high speed photodetector, a reference voltage source, a comparator, and a pulse oscillator and modulator. If the circuit is built using standard silicon integrated circuits, its speed amounts to several hundred megahertz, if it is constructed using gallium arsenide integrated circuits, its speed is several gigahertz.

  20. Design of Test Circuits of DC Circuit Breaker for High Voltage Direct Current (HVDC) Distribution System-Ⅱ%高压直流输电用直流转换开关转换电流试验回路的分析与设计(2)

    Institute of Scientific and Technical Information of China (English)

    那虎; 丁正平; 孙晋峰; 杨俊清; 刘龙开; 袁方; 洪深

    2013-01-01

    For testing the high voltage direct current (HVDC) circuit breakers of HVDC distribution system in laboratory, the working conditions and characteristics of HVDC distribution system are analyzed, and two test circuits for the HVDC circuit breakers are designed according to the grid parameters and working condition requirements, as well as PSCAD simulations. The design of one of the test circuits, named direct test circuit, is described in detail and calculated.%针对超高压直流输变电系统用的直流开关转换设备的检验检测如何在试验室实施,笔者通过对直流输电系统的运行工况及特性进行研究,依据电网参数及工况的要求定性试验方法或方式.通过对转换电流开断能力试验的相关分析及PSCAD仿真试验模拟,设计了两种试验回路以满足试验参数的要求,文中介绍其中之一合成试验回路的设计及分析,并进行计算,对其实施进行了必要的阐述和探讨.

  1. 高压直流输电用直流转换开关转换电流试验回路的分析与设计(1)%Design of Test Circuits of DC Circuit Breaker for High Voltage Direct Current(HVDC) Distribution System-Ⅰ

    Institute of Scientific and Technical Information of China (English)

    那虎; 丁正平; 孙晋峰; 杨俊清; 刘龙开; 袁方; 洪深

    2012-01-01

    For testing the high voltage direct current (HVDC) circuit breakers of HVDC distribution system in laboratory, the working conditions and characteristics of HVDC distribution system are analyzed, and two test circuits for the HVDC circuit breakers are designed according to the grid parameters and working condition requirements, as well as PSCAD simulations. The design of one of the test circuits, named direct test circuit, is described in detail and calculated.%针对超高压直流输变电系统用的直流开关转换设备的检验检测如何在试验室实施,笔者通过对直流输电系统的运行工况及特性进行研究,依据电网参数及工况的要求定性试验方法或方式.通过对转换电流开断能力试验的相关分析及PSCAD仿真试验模拟,设计了两种试验回路以满足试验参数的要求,文中介绍其中之一合成试验回路的设计及分析,并进行计算,对其实施进行了必要的阐述和探讨.

  2. An improved fully integrated, high-speed, dual-modulus divider

    Science.gov (United States)

    Zheng, Sun; Yong, Xu; Guangyan, Ma; Hui, Shi; Fei, Zhao; Ying, Lin

    2014-11-01

    A fully integrated 2n/2n+1 dual-modulus divider in GHz frequency range is presented. The improved structure can make all separated logic gates embed into correlative D flip—flops completely. In this way, the complex logic functions can be performed with a minimum number of devices and with maximum speed, so that lower power consumption and faster speed are obtained. In addition, the low-voltage bandgap reference needed by the frequency divider is specifically designed to provide a 1.0 V output. According to the design demand, the circuit is fabricated in 0.18 μm standard CMOS process, and the measured results show that its operating frequency range is 1.1-2.5 GHz. The dual-modulus divider dissipates 1.1 mA from a 1.8 V power supply. The temperature coefficient of the reference voltage circuit is 8.3 ppm/°C when the temperature varies from -40 to +125 °C. By comparison, the dual-modulus divide designed in this paper can possess better performance and flexibility.

  3. An improved fully integrated, high-speed, dual-modulus divider

    Institute of Scientific and Technical Information of China (English)

    Sun Zheng; Xu Yong; Ma Guangyan; Shi Hui; Zhao Fei; Lin Ying

    2014-01-01

    A fully integrated 2n/2n+l dual-modulus divider in GHz frequency range is presented.The improved structure can make all separated logic gates embed into correlative D flip-flops completely.In this way,the complex logic functions can be performed with a minimum number of devices and with maximum speed,so that lower power consumption and faster speed are obtained.In addition,the low-voltage bandgap reference needed by the frequency divider is specifically designed to provide a 1.0 V output.According to the design demand,the circuit is fabricated in 0.18μm standard CMOS process,and the measured results show that its operating frequency range is 1.1-2.5 GHz.The dual-modulus divider dissipates 1.1 mA from a 1.8 V power supply.The temperature coefficient of the reference voltage circuit is 8.3 ppm/℃ when the temperature varies from-40 to + 125 ℃.By comparison,the dual-modulus divide designed in this paper can possess better performance and flexibility.

  4. High-Voltage, Low-Power BNC Feedthrough Terminator

    Science.gov (United States)

    Bearden, Douglas

    2012-01-01

    This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

  5. Incorporation of Al-(hydr)oxide species onto the surface of TiO{sub 2} nanoparticles: Improving the open-circuit voltage in dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Aguilar, Teresa; Navas, Javier, E-mail: javier.navas@uca.es; Fernández-Lorenzo, Concha; Alcántara, Rodrigo; Gallardo, Juan Jesús; De los Santos, Desireé M.; Martín-Calleja, Joaquín

    2015-03-02

    This study presents the incorporation of Al-(hydr)oxide species onto the surface of TiO{sub 2} nanoparticles used as photoelectrodes in dye-sensitized solar cells. The semiconductors prepared were comprehensively characterized by means of atomic absorption spectroscopy, X-ray diffraction, Fourier transform infrared spectroscopy, Raman spectroscopy, and UV–vis spectroscopy. The percentages of Al incorporated onto the TiO{sub 2} surface were obtained, the maximum being 6.45 wt.% (Al/TiO{sub 2}). The presence of Al-(hydr)oxides in the samples was also determined, and was shown not to affect the crystalline phases present, as well as affecting the amount of dye that the semiconductors were able to absorb. These results are evidence of the presence of Al-(hydr)oxide species on the surface. Furthermore, the use of the semiconductors prepared as photoelectrodes in DSSCs led to an increase in open-circuit voltage of up to 16%. - Highlights: • The incorporation of Al-(hydr)oxides onto the TiO{sub 2} nanoparticles surface was obtained. • The semiconductor prepared was used as photoelectrode in DSSCs. • The open-circuit voltage increases up to 16% using the semiconductors prepared. • The presence of Al-(hydr)oxides does not to affect the crystalline phases of TiO{sub 2}.

  6. CMOS Nonlinear Signal Processing Circuits

    OpenAIRE

    2010-01-01

    The chapter describes various nonlinear signal processing CMOS circuits, including a high reliable WTA/LTA, simple MED cell, and low-voltage arbitrary order extractor. We focus the discussion on CMOS analog circuit design with reliable, programmable capability, and low voltage operation. It is a practical problem when the multiple identical cells are required to match and realized within a single chip using a conventional process. Thus, the design of high-reliable circuit is indeed needed. Th...

  7. High voltage pulse generator

    Science.gov (United States)

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  8. 7800系列三端固定集成稳压器应用电路的可靠性设计%Reliability Design of Application Circuit for 7800 Series Three Terminal Positive Voltage Regulator

    Institute of Scientific and Technical Information of China (English)

    2013-01-01

    The article introduced the working principle for 7800 series three terminal posi-tive voltage regulator. At the same time, based on the statistic fault data of three terminal positive voltage regulator, it can be classified for five kind fault characteristics. And com-bining the working principle of 7800 series and energy characteristics of the power supply, the five kind of the fault characteristics were analyzed. Finally, the article presented the methods for reliability design of application circuit for 7800 series three terminal positive voltage regulator. The methods are simple to use and have high reliability, and verified in application.%  简介:本文介绍了7800系列三端固定集成稳压器的工作原理。同时根据已统计的三端固定集成稳压器故障数据,归类于五种故障特征,并结合7800系列的工作原理和电源的能量特征对这五种故障进行了分析。最后给出7800系列三端固定集成稳压器应用电路的可靠性设计的方法。这些方法简单实效,且可靠性强,已得到了实际应用验证。

  9. Fuzzy Bang-Bang Control Scheme of USSC for Voltage Sag Mitigation Due to Short Circuits and Induction Motor Starting in Distribution System

    Directory of Open Access Journals (Sweden)

    Mohammad Mohammadi

    2014-12-01

    Full Text Available Unified series shunt compensator (USSC has been widely used to mitigate various power quality disturbances in distribution network. The USSC is almost similar to the UPFC, but the only differences are that the UPFC inverters are in shunt series connection and used in transmission systems whereas the USSC inverters are in series-shunt connection and used in distribution systems. USSC, it is possible to compensate a different power quality problem as compared to DSTATCOM and DVR. It is noted that, mitigated load voltage by the DVR is lower than mitigated value obtained by USSC. In other words the USSC can mitigate voltage sag better in compared to DVR and D-STATCOM. Also in case of voltage flicker, unbalance and harmonics elimination it is much effective.  Similarly, D-STATCOM is unable to control power flow.  It is seen that the proposed USSC can mitigate variety of power quality (PQ problems. Hence due to multi capability of USSC in power quality improvement, this paper presents the scheme based on fuzzy bang-bang control for USSC. Using Fuzzy Logic Control (FLC based on bang-bang control; the USSC will contribute to improve voltage sag without deteriorating the effect of the other compensating devices.

  10. Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

    Science.gov (United States)

    Petti, Luisa; Pattanasattayavong, Pichaya; Lin, Yen-Hung; Münzenrieder, Niko; Cantarella, Giuseppe; Yaacobi-Gross, Nir; Yan, Feng; Tröster, Gerhard; Anthopoulos, Thomas D.

    2017-03-01

    We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V-1 s-1 and 0.013 cm2 V-1 s-1, respectively, current on/off ratio in the range 102-104, and maximum operating voltages between -3.5 and -10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as -3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

  11. Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

    KAUST Repository

    Petti, Luisa

    2017-03-17

    We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V−1 s−1 and 0.013 cm2 V−1 s−1, respectively, current on/off ratio in the range 102–104, and maximum operating voltages between −3.5 and −10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as −3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

  12. Continental Divide Trail

    Data.gov (United States)

    Earth Data Analysis Center, University of New Mexico — This shapefile was created to show the proximity of the Continental Divide to the Continental Divide National Scenic Trail in New Mexico. This work was done as part...

  13. Two-Terminal Fault Location for Four-Circuit Transmission System Composed of Two Double-Circuit Transmission Lines on Same Towers Respectively Belonging to Different Voltage Grades%不同电压等级四回线双端故障测距原理研究

    Institute of Scientific and Technical Information of China (English)

    李月乔; 王君

    2012-01-01

    由于存在互感和故障类型众多,不同电压等级四回线的故障分析和故障测距愈加困难。为此采用六序分量矩阵叠加方法对不同电压等级的四回线进行解耦,可以将阻抗阵转换为一个特殊的对角阵,非对角线上不为零的元素只有2个,表明四回线的同向零序网存在互感,其它的非对角线元素为零,表明四回线的反向正序网之间不存在互感。采用六序分量矩阵叠加方法对四回线系统的2条同杆双回线两端的电流分别进行矩阵变换,得到2组反向正序电流,利用反向正序电压在故障点相等I坷特点,实现不同电压等级四回线的双端故障测距。该双端故障测距方法不需要考虑不同电压等级同杆双回线的参数归算,测距精度不受故障类型、故障点过渡电阻、系统运行方式的影响。仿真结果表明,该双端故障测距方法具有有效性和实用性。%Due to the existence of mutual inductances and various types of faults, it is more difficult in fault analysis and fault location for four-circuit transmission system composed of two double-circuit transmission lines on same towers respectively belonging to different voltage grades. For this reason, the superposition of two six-sequence component matrices is adopted to decompose the four-circuit transmission lines respectively belonging to two different voltage grades, thus the impedance matrix can be turned into a special diagonal matrix and only two nonzero elements on non-diagonals and this suggests that there is mutual inductance in the synclastic zero-sequence network of the four-circuit transmission system. Applying matrix transformation to currents at both terminals of the two double-circuit transmission lines on same towers in the four-circuit transmission system, two sets of reverse positive sequence currents are attained, then based on the feature that at fault point the reverse positive-sequence voltages

  14. A Novel Design Of An NTC Thermistor Linearization Circuit

    Directory of Open Access Journals (Sweden)

    Lukić Jelena

    2015-09-01

    Full Text Available A novel design of a circuit used for NTC thermistor linearization is proposed. The novelty of the proposed design consists in a specific combination of two linearization circuits, a serial-parallel resistive voltage divider and a two-stage piecewise linear analog-to-digital converter. At the output of the first linearization circuit the quasi-linear voltage is obtained. To remove the residual voltage nonlinearity, the second linearization circuit, i.e., a two-stage piecewise linear analog-to-digital converter is employed. This circuit is composed of two flash analog-to-digital converters. The first analog-to-digital converter is piecewise linear and it is actually performing the linearization, while the second analog-to-digital converter is linear and it is performing the reduction of the quantization error introduced by the first converter. After the linearization is performed, the maximal absolute value of a difference between the measured and real temperatures is 0.014°C for the temperature range between −25 and 75°C, and 0.001°C for the temperature range between 10 and 40°C.

  15. 高压真空断路器的检修与维护%Maintenance of High Voltage Vacuum Circuit Breaker

    Institute of Scientific and Technical Information of China (English)

    2013-01-01

    Vacuum circuit breaker has advantages of large capacity, good arc extin-guishing performance, long life of contact head, a small amount of operation maintenance and long maintenance cycle. Therefore, the vacuum circuit breaker has been widely used in every substation of Jigang Group Co., Ltd. The problems in maintenance of the vacuum circuit breaker are analyzed, and the improvement suggestions and measures are offered.%  真空断路器具有开断容量大、灭弧性能好、触头寿命长、运行维护量小、检修周期长等特点。因此,真空断路器在济钢各个变电站得到了广泛的应用。针对济钢内部真空断路器维护检修中出现的一些问题进行分析,并提出改进建议和措施。

  16. 用于等离子体离子辐照的新型阶梯型脉冲高压电路研制%Novel Circuit Producing Pulsed High Voltage with Discrete Steps for Ion Bombardment in Plasma Immersion

    Institute of Scientific and Technical Information of China (English)

    石经纬; 田修波; 巩春志; 杨士勤

    2011-01-01

    为满足等离子体离子辐照和复合表面改性处理技术的发展,提出了基于Marx发生器,通过调节驱动信号延时,实现放电IGBT开关不同时导通,从而获得阶梯型脉冲高压输出的电路设计思想,并验证了其可行性.试验结果显示,该电路可输出脉冲峰值电压10 kV,峰值电流30 A,脉冲宽度3~30μs,脉冲频率20~500 Hz,最大电压阶数10阶的高压脉冲.1个原边、10个副边结构的驱动高压隔离变压器及延时驱动电路结构紧凑,抗干扰能力强.IGBT驱动反向偏置脉冲电压能够满足IGBT快速关断和过流保护的要求.等离子体负载下电路特性测试结果表明,该电路能够适应实际的工作环境,为复合处理技术的发展提供技术支持.该电路结构通过Marx单元叠加可以拓展到更高的脉冲电压输出.%A novel circuit which is capable of producing pulsed high voltage with discrete steps based on Marx generator has been developed for ion bombardment in plasma immersion, and it is realized by means of each discharge IG-BT switching on at different time by adjusting the delay time of drive signals. A compact and robust circuit is designed, using a high-voltage isolation transformer with one primary winding and ten secondary windings for control signal and designed delay drive unit, to meet the requirements of rapidity of switch off and overcurrent protection of IGBT. A pulsed high voltage with amplitude of 10kV, peak current of 30A, pulse width of 3~30 μs, frequency of 20~500 Hz and voltage steps of 10 are achieved. The developed circuit with several kinds of output voltage waveforms is applied to the plasma load with high reliability, and possesses the practicability for ion bombardment or hy-. Brid surface modification in plasma immersion mode. The higher pulse voltage may be achieved using more Marx link with the same control mode for wide application.

  17. Relationship between open-circuit voltage in Cu(In,Ga)Se{sub 2} solar cell and peak position of (220/204) preferred orientation near its absorber surface

    Energy Technology Data Exchange (ETDEWEB)

    Chantana, J., E-mail: jakapan@fc.ritsumei.ac.jp; Minemoto, T. [Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan); Watanabe, T.; Teraji, S.; Kawamura, K. [Environment and Energy Research Center, Nitto Denko Corporation, 2-8 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2013-11-25

    Cu(In,Ga)Se{sub 2} (CIGS) absorbers with various Ga/III, Ga/(In+Ga), profiles are prepared by the so-called “multi-layer precursor method” using multi-layer co-evaporation of material sources. It is revealed that open-circuit voltage (V{sub OC}) of CIGS solar cell is primarily dependent on averaged Ga/III near the surface of its absorber. This averaged Ga/III is well predicted by peak position of (220/204) preferred orientation of CIGS film near its surface investigated by glancing-incidence X-ray diffraction with 0.1° incident angle. Finally, the peak position of (220/204) preferred orientation is proposed as a measure of V{sub OC} before solar cell fabrication.

  18. 基于开路电压法光伏电池最大功率追踪器%Maximum Power Point Tracker Based on Open-circuit Voltage Method

    Institute of Scientific and Technical Information of China (English)

    钟长艺; 康龙云; 聂洪涛; 李贞姬

    2011-01-01

    光伏电池的最大功率点跟踪( MPPT)对提高太阳能的利用率以及充分利用太阳能所转换的能量而言至关重要.由于开路电压法特别适用于小功率光伏发电系统,因此选择开路电压法作为MPPT的控制方法.在分析了设计需求后,设计了基于单片机控制的开路电压法光伏电池最大功率追踪器,并采用大容量电源负载装置模拟电源功能模拟的光伏电池进行实验,设计的最大功率追踪器效率可达85%以上,特别适合应用在要求低成本小功率的太阳能LED路灯工程中.%The maximum power point tracking (MPPT) is very important for the photovoltaic cell to improve the energy utilization efficiency and make full use of the switching energy .The open-circuit voltage control method is used.Af-ter analyzing the design requirement, a maximum power point tracker based on the open-circuit voltage method controlled by single-chip microcomputer is designed. In the experiment, the active power load device is used to simulate the photovoltaic cell.The tracking efficiency of the designed maximum power tracker can reach 85% above, especially suitable for using in solar LED lamp project which requires low-cost and small-power.

  19. 探讨高压断路器机械故障及改进方法%Discussion on Mechanical Failure of High Voltage Circuit Breaker and Its Improvement

    Institute of Scientific and Technical Information of China (English)

    杨志钧

    2016-01-01

    高压断路器是电力系统的重要执行元件,能够灵巧地实现系统运行方式的变化和倒闸操作的要求,是电力系统及设备能够安全稳定运行的重要保证。随着社会经济的快速发展,对供电的安全性、质量性、可靠性和经济性提出了更高的要求。本文从实际出发,系统的对高压断路器在运行时的常见的故障问题进行分析,提出合理的改进措施,并结合案例论述改进措施的有效性。希望本文对从事断路器维护及修理的工作人员有一定的指导作用。%High voltage circuit breaker is an important executive component of the power system. It can deftly achieve the change of system operation mode and the request of switching operation. It is an important guarantee for the safe and stable operation of power system and equipment. With the rapid development of social economy, it is put forward higher requirements for the security, quality, reliability and economy of power supply. This article from the reality, systematically analyzed the common faults in the operation of high voltage circuit breakers, put forward reasonable improvement measures, and combining with the case discussed the effectiveness of improvement measures.

  20. Driver circuit for solid state light sources

    Energy Technology Data Exchange (ETDEWEB)

    Palmer, Fred; Denvir, Kerry; Allen, Steven

    2016-02-16

    A driver circuit for a light source including one or more solid state light sources, a luminaire including the same, and a method of so driving the solid state light sources are provided. The driver circuit includes a rectifier circuit that receives an alternating current (AC) input voltage and provides a rectified AC voltage. The driver circuit also includes a switching converter circuit coupled to the light source. The switching converter circuit provides a direct current (DC) output to the light source in response to the rectified AC voltage. The driver circuit also includes a mixing circuit, coupled to the light source, to switch current through at least one solid state light source of the light source in response to each of a plurality of consecutive half-waves of the rectified AC voltage.

  1. Induced Voltage and Current of 750kV Double Circuit Maintenance Transmission Line%750kV同塔双回线路检修线路感应电压、电流研究

    Institute of Scientific and Technical Information of China (English)

    曾林平; 文武; 阮江军; 张思寒

    2012-01-01

    Based on Lanzhou East-Pingliang 270km-long 750kV double circuit transmission line on the same tower, this paper researched the magnitude and distribution characteristics of the induced voltage of maintenance line and induced current of grounding wire in order to provide reference for the formulation of maintenance program and the selection of temporary grounding wire. The results earl also be applied in Pingliang-Qianxian 750kV double circuit transmission line.%以兰州东—平凉段270 km长的750 kV同塔双回输电线路为例,研究了检修线路的感应电压及临时接地线的感应电流的大小及分布特征,为检修方案的制定及临时接地线的选型提供参考,研究结果也可用于平凉—乾县段的750 kV同塔输电线路。

  2. Photovoltaic Small Molecules of TPA(FxBT-T-Cz)3: Tuning Open-Circuit Voltage over 1.0 V for Their Organic Solar Cells by Increasing Fluorine Substitution.

    Science.gov (United States)

    Wang, Qiong; Duan, Linrui; Tao, Qiang; Peng, Wenhong; Chen, Jianhua; Tan, Hua; Yang, Renqiang; Zhu, Weiguo

    2016-11-09

    To simultaneously improve both open-circuit voltage (Voc) and short-circuit current density (Jsc) for organic solar cells, a novel D(A-π-Ar)3 type of photovoltaic small molecules of TPA(FxBT-T-3Cz)3 was designed and synthesized, which contain central triphenylamine (TPA), terminal carbazole (Cz), armed fluorine-substituted benzothiadiazole (FxBT, where x = 1 or 2), and bridged thiophene (T) units. A narrowed ultraviolet-visible absorption and a decreasing highest occupied molecular orbital energy level were observed from TPA(F1BT-T-3Cz)3 to TPA(F2BT-T-3Cz)3 with increasing fluorine substitution. However, the TPA(F2BT-T-3Cz)3/PC71BM-based solar devices showed a rising Voc of 1.01 V and an enhanced Jsc of 10.84 mA cm(-2) as well as a comparable power conversion efficiency of 4.81% in comparison to the TPA(F1BT-T-3Cz)3/PC71BM-based devices. Furthermore, in comparison to the parent TPA(BT-T-3Cz)3 molecule without fluorine substitution, the fluorine-substituted TPA(FxBT-T-3Cz)3 molecules exhibited significantly incremental Voc and Jsc values in their bulk heterojunction organic solar cells, owing to fluorine incorporation in the electron-deficient benzothiadiazole unit.

  3. Rational Design of High-Performance Wide-Bandgap (≈2 eV) Polymer Semiconductors as Electron Donors in Organic Photovoltaics Exhibiting High Open Circuit Voltages (≈1 V).

    Science.gov (United States)

    Chochos, Christos L; Katsouras, Athanasios; Gasparini, Nicola; Koulogiannis, Chrysanthos; Ameri, Tayebeh; Brabec, Christoph J; Avgeropoulos, Apostolos

    2017-01-01

    Systematic optimization of the chemical structure of wide-bandgap (≈2.0 eV) "donor-acceptor" copolymers consisting of indacenodithiophene or indacenodithieno[3,2-b]thiophene as the electron-rich unit and thieno[3,4-c]pyrrole-4,6-dione as the electron-deficient moiety in terms of alkyl side chain engineering and distance of the electron-rich and electron-deficient monomers within the repeat unit of the polymer chain results in high-performance electron donor materials for organic photovoltaics. Specifically, preliminary results demonstrate extremely high open circuit voltages (V oc s) of ≈1.0 V, reasonable short circuit current density (J sc ) of around 11 mA cm(-2) , and moderate fill factors resulting in efficiencies close to 6%. All the devices are fabricated in an inverted architecture with the photoactive layer processed by doctor blade equipment, showing the compatibility with roll-to-roll large-scale manufacturing processes. From the correlation of the chemical structure-optoelectronic properties-photovoltaic performance, a rational guide toward further optimization of the chemical structure in this family of copolymers, has been achieved. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. International Divider Walls

    NARCIS (Netherlands)

    Kruis, A.; Sneller, A.C.W.(L.)

    2013-01-01

    The subject of this teaching case is the Enterprise Resource Planning (ERP) system implementation at International Divider Walls, the world market leader in design, production, and sales of divider walls. The implementation in one of the divisions of this multinational company had been successful, a

  5. International Divider Walls

    NARCIS (Netherlands)

    Kruis, A.; Sneller, A.C.W.(L.)

    2013-01-01

    The subject of this teaching case is the Enterprise Resource Planning (ERP) system implementation at International Divider Walls, the world market leader in design, production, and sales of divider walls. The implementation in one of the divisions of this multinational company had been successful,

  6. Frequency-controlled voltage regulator

    Science.gov (United States)

    Mclyman, W. T.

    1980-01-01

    Converting input ac to higher frequency reduce size and weight and makes possible unique kind of regulation. Since conversion frequency is above range of human hearing, supply generated on audible noise. It also exploits highfrequency conversion features to regulate its output voltage in novel way. Circuit is inherently short-circuit proof.

  7. Analysis of Current Setting of Fuse in Low-voltage Circuit in Collieries%浅析煤矿低压线路熔断器电流的整定

    Institute of Scientific and Technical Information of China (English)

    曹毅

    2016-01-01

    熔断器作为煤矿井下低压过流保护装置之一,可以有效防止机电设备损坏,对于高瓦斯矿井可以有效防止矿井火灾、瓦斯煤尘爆炸等事故,所以对低压线路过流保护装置过流保护值的合理整定对矿井安全供电起着重要作用。%As one of low -voltage over current protection device underground coal mine ,fuse can effectively pre‐vent the damage to electrical and mechanical equipment ,accidents such as fire disaster and gas and coal dust ex‐plosion .So the reasonable setting of over current protection value of low -voltage circuit over current protection device plays an important role in safety power supply in coal mine .

  8. A novel ZVS high voltage power supply for micro-channel plate photomultiplier tubes

    Science.gov (United States)

    Pei, Chengquan; Tian, Jinshou; Liu, Zhen; Qin, Hong; Wu, Shengli

    2017-04-01

    A novel resonant high voltage power supply (HVPS) with zero voltage switching (ZVS), to reduce the voltage stress on switching devices and improve conversion efficiency, is proposed. The proposed HVPS includes a drive circuit, a transformer, several voltage multiplying circuits, and a regulator circuit. The HVPS contains several secondary windings that can be precisely regulated. The proposed HVPS performed better than the traditional resistor voltage divider, which requires replacing matching resistors resulting in resistor dispersibility in the Micro-Channel Plate (MCP). The equivalent circuit of the proposed HVPS was established and the operational principle analyzed. The entire switching element can achieve ZVS, which was validated by a simulation and experiments. The properties of this HVPS were tested including minimum power loss (240 mW), maximum power loss (1 W) and conversion efficiency (85%). The results of this research are that the proposed HVPS was suitable for driving the micro-channel plate photomultiplier tube (MCP-PMT). It was therefore adopted to test the MCP-PMT, which will be used in Daya Bay reactor neutrino experiment II in China.

  9. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    Science.gov (United States)

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  10. Thyristor Based Hybrid Arc-less High Voltage Direct Current Circuit Breaker%基于晶闸管的混合型无弧高压直流断路器

    Institute of Scientific and Technical Information of China (English)

    周万迪; 魏晓光; 高冲; 罗湘; 曹均正

    2014-01-01

    Increasing HVDC transmission project gradually attracts the researcher’s attention to the high voltage DC circuit breaker (DCCB), which is the interrupt equipment in DC line. The DCCB could promote the realization of multi-terminal direct current (MTDC) and DC grid, and advance the development of renewable energy such as offshore wind power. This paper firstly compared the various existing circuit breaker. A thyristor based on hybrid arc-less high voltage DCCB topology was proposed. According to the equivalent mathematical models established in the paper, the critical instants and electrical parameters for different operating stages of the DCCB were derived. Operating performance of the DCCB for Zhou Shan 5 terminals 200 kV DC system was analyzed using PSCAD/EMTDC simulations, which was compared from technology and economic aspects, and the correctness of the theoretical analysis and the feasibility of the circuit breaker were also proved.%伴随着高压直流输电工程日益增长,直流断路器作为直流线路中分断装置,也逐步受到了研究人员的关注,其能够促进多端直流及直流电网实现,推动可再生能源尤其是海上风电的开发。首先简要回顾了高压直流断路器研究状况,对现有方案进行了比较分析。随后提出了一种基于晶闸管的混合型无弧高压直流断路器,通过等效数学模型对工作阶段的电气参数和临界时刻进行了计算。最后以舟山5端直流系统电压200 kV为参照,利用PSCAD/EMTDC开展了断路器仿真研究,验证了理论分析的正确性以及所提断路器的可行性,并从技术和经济角度开展了性能分析。

  11. Improvement of the characteristics of inductive dividers due to the use of electronic devices; Mejora en las caracteristicas de divisores inductivos mediante el uso de dispositivos electronicos

    Energy Technology Data Exchange (ETDEWEB)

    Slomovitz, Daniel [UTE - Laboratorio, Montevideo (Uruguay)

    1996-12-31

    This work present a new system of electronic compensation for decrease the errors of inductive dividers and measure transformers of voltage. A auxiliary current amplifier reduce the magnetization current, main source of errors in this devices, in low frequency. Simultaneously rise the input impedance. This method permit the construction of small devices, few weight and little errors, without overload in the input circuits that is connected 5 refs., 1 fig., 2 tabs.

  12. Unequal Input Voltages Distribution Between the Serial Connected Halfbridges

    Directory of Open Access Journals (Sweden)

    Radovan Ovcarcik

    2006-01-01

    Full Text Available This paper describes a topology of DC-DC converter consisting in two serial connected half-bridges. Secondary circuit is realized like a conventional full-wave rectifier. The main advantage of this topology is the possibility of dividing the input voltage between the half-bridges. The converter is controlled using the phase-shift modulation, which allows a ZVSoperation mode. The voltage unbalance between the inputs causes an important problem of the presented topology. It is necessary to avoid it by the control algorithm, which is described in the text. The practical results show a zero voltage switching technique and the limits of the chosen topology and of the control.

  13. A Novel Nanometric Reversible Signed Divider with Overflow Checking Capability

    Directory of Open Access Journals (Sweden)

    Faraz Dastan

    2012-03-01

    Full Text Available One of the best approaches for designing future computers is that we use reversible logic. Reversible logic circuits have lower power consumption than the common circuits, used in computers nowadays. In this study we propose a new reversible division circuit. This reversible division circuit is signed divider and has an overflow checking capability. Among the designed and proposed reversible division circuits, our proposed division circuit is the first reversible signed divider with overflow checking capability which has been designed. In this circuit we use some reversible components like reversible parallel adder, reversible left-shift register, reversible multiplexer, reversible n-bit register and reversible n-bit register with parallel load line. In this paper all the scales are in the nanometric area.

  14. Fingerprinted circuits and methods of making and identifying the same

    Science.gov (United States)

    Ferguson, Michael Ian (Inventor)

    2012-01-01

    A circuit having a fingerprint for identification of a particular instantiation of the circuit is disclosed. The circuit may include a plurality of digital circuits or gates. Each of the digital circuits or gates is responsive to a configuration voltage applied to its analog input for controlling whether or not the digital circuit or gate performs its intended digital function and each of the digital circuits or gates transitioning between its functional state and its at least one other state when the configuration voltage equals a boundary voltage. The boundary voltage varies between different instantiations of the circuit for a majority of the digital circuits or gates and these differing boundary voltages serving to identify (or fingerprint) different instantiations of the same circuit.

  15. A new level-shifting structure with multiply metal rings by divided RESURF technique

    Institute of Scientific and Technical Information of China (English)

    Liu Jizhi; Chen Xingbi

    2009-01-01

    A new structure of a lateral n-MOST and a new level-shifting structure with multiply metal rings(MMRs) by divided RESURF technique have been proposed.The device and electrical performances of the structure are analyzed and simulated by MEDICI.In comparison to the level-shifting structure with multiply floating field plates (MFFPs)used before,the structure stated here improves the reliability and diminishes the voltage difference between the voltage of the power supply of the high-side gate driver and the voltage of the output terminal of the level-shifting structure,which is also that of the input terminal of the high-side gate driver.The maximal voltage difference of the level-shifting structure in this paper is 30%lower than that used before.Therefore,good voltage isolation and current isolation are obtained.The structure can be used in the level-shifting circuit of various applications.

  16. Resilient architecture design for voltage variation

    CERN Document Server

    Reddi, Vijay Janapa

    2013-01-01

    Shrinking feature size and diminishing supply voltage are making circuits sensitive to supply voltage fluctuations within the microprocessor, caused by normal workload activity changes. If left unattended, voltage fluctuations can lead to timing violations or even transistor lifetime issues that degrade processor robustness. Mechanisms that learn to tolerate, avoid, and eliminate voltage fluctuations based on program and microarchitectural events can help steer the processor clear of danger, thus enabling tighter voltage margins that improve performance or lower power consumption. We describe

  17. Bridging the Digital Divide

    DEFF Research Database (Denmark)

    Frølunde, Lisbeth

    2002-01-01

    The article concerns the digital divide, meaning the social inequity in the access and the opportunities for gaining competencies with ICT (information and communication technologies). Problematic issues are highlighted in relation to experiences during visits to several Computer Clubhouses...

  18. The Open Access Divide

    National Research Council Canada - National Science Library

    Jingfeng Xia

    2013-01-01

      This paper is an attempt to review various aspects of the open access divide regarding the difference between those academics who support free sharing of data and scholarly output and those academics who do...

  19. Research and Experiments on a Unipolar Capacitive Voltage Sensor

    Directory of Open Access Journals (Sweden)

    Qiang Zhou

    2015-08-01

    Full Text Available Voltage sensors are an important part of the electric system. In service, traditional voltage sensors need to directly contact a high-voltage charged body. Sensors involve a large volume, complex insulation structures, and high design costs. Typically an iron core structure is adopted. As a result, ferromagnetic resonance can occur easily during practical application. Moreover, owing to the multilevel capacitor divider, the sensor cannot reflect the changes of measured voltage in time. Based on the electric field coupling principle, this paper designs a new voltage sensor; the unipolar structure design solves many problems of traditional voltage sensors like the great insulation design difficulty and high costs caused by grounding electrodes. A differential signal input structure is adopted for the detection circuit, which effectively restrains the influence of the common-mode interference signal. Through sensor modeling, simulation and calculations, the structural design of the sensor electrode was optimized, miniaturization of the sensor was realized, the voltage division ratio of the sensor was enhanced, and the phase difference of sensor measurement was weakened. The voltage sensor is applied to a single-phase voltage class line of 10 kV for testing. According to the test results, the designed sensor is able to meet the requirements of accurate and real-time measurement for voltage of the charged conductor as well as to provide a new method for electricity larceny prevention and on-line monitoring of the power grid in an electric system. Therefore, it can satisfy the development demands of the smart power grid.

  20. Circuit analysis with Multisim

    CERN Document Server

    Baez-Lopez, David

    2011-01-01

    This book is concerned with circuit simulation using National Instruments Multisim. It focuses on the use and comprehension of the working techniques for electrical and electronic circuit simulation. The first chapters are devoted to basic circuit analysis.It starts by describing in detail how to perform a DC analysis using only resistors and independent and controlled sources. Then, it introduces capacitors and inductors to make a transient analysis. In the case of transient analysis, it is possible to have an initial condition either in the capacitor voltage or in the inductor current, or bo

  1. Low Voltage Power Supply Incorporating Ceramic Transformer

    CERN Document Server

    Imori, M

    2007-01-01

    A low voltage power supply provides the regulated output voltage of 1 V from the supply voltage around 48 V. The low voltage power supply incorporates a ceramic transformer which utilizes piezoelectric effect to convert voltage. The ceramic transformer isolates the secondary from the primary, thus providing the ground isolation between the supply and the output voltages. The ceramic transformer takes the place of the conventional magnetic transformer. The ceramic transformer is constructed from a ceramic bar and does not include any magnetic material. So the low voltage power supply can operate under a magnetic field. The output voltage is stabilized by feedback. A feedback loop consists of an error amplifier, a voltage controlled oscillator and a driver circuit. The amplitude ratio of the transformer has dependence on the frequency, which is utilized to stabilize the output voltage. The low voltage power supply is investigated on the analogy of the high voltage power supply similarly incorporating the cerami...

  2. High Voltage Distribution

    Science.gov (United States)

    Norbeck, Edwin; Miller, Michael; Onel, Yasar

    2010-11-01

    For detector arrays that require 5 to 10 kV at a few microamps each for hundreds of detectors, using hundreds of HV power supplies is unreasonable. Bundles of hundreds of HV cables take up space that should be filled with detectors. A typical HV module can supply 1 ma, enough current for hundreds of detectors. It is better to use a single HV module and distribute the current as needed. We show a circuit that, for each detector, measures the current, cuts off the voltage if the current exceeds a set maximum, and allows the HV to be turned on or off from a control computer. The entire array requires a single HV cable and 2 or 3 control lines. This design provides the same voltage to all of the detectors, the voltage set by the single HV module. Some additional circuitry would allow a computer controlled voltage drop between the HV and each individual detector.

  3. The Open Access Divide

    Directory of Open Access Journals (Sweden)

    Jingfeng Xia

    2013-10-01

    Full Text Available This paper is an attempt to review various aspects of the open access divide regarding the difference between those academics who support free sharing of data and scholarly output and those academics who do not. It provides a structured description by adopting the Ws doctrines emphasizing such questions as who, what, when, where and why for information-gathering. Using measurable variables to define a common expression of the open access divide, this study collects aggregated data from existing open access as well as non-open access publications including journal articles and extensive reports. The definition of the open access divide is integrated into the discussion of scholarship on a larger scale.

  4. New longitudinal differential protection scheme for four-circuit transmission line with different voltage grades%不同电压等级的四回线的纵联差动保护方案

    Institute of Scientific and Technical Information of China (English)

    陈金熠; 范春菊; 刘玲

    2011-01-01

    To solve the problem that the traditional longitudinal differential protection used in four-circuit transmission line on the same pole with different levels will be seriously affected by coupling inductance, a new longitudinal differential protection scheme based on inverse-sequence negative sequence difference current is proposed. Four-circuit transmission lines with different voltage grades generally consist of two double circuit transmission lines at the same tower. However, when line parameters are symmetry, the inverted sequence current is zero when the system operates normally or external faults occur. Once internal faults occur, there is inverted current in the transmission line, and the sum of inverted current at both sides is large, so the differential protection based on inverted current can operate correctly. For this method, the reliability and sensitivity under big fault resistance can be kept. And it will not be affected by capacitive current when it is applied to the main protection of four-circuit transmission line with different voltage grades. The theoretical analysis and EMTP simulation results show that the proposed principle is correct and reliable.%为克服传统纵联差动保护运用在不同电压等级的同杆四回线中容易受到耦合电感的影响,提出了基于反序负序差电流的纵联差动保护方案.不同电压等级的四回线由两个不同电压的等级的同杆双回线构成.对于同杆双回线路,当线路参数完全对称时,系统正常运行或是外部故障时,反向电流分量为零;而当双回线内部故障时,反向环流量存在于双回线的内部,双回线两侧反向电流之和比较大,可以构成基于反向环流量的纵联差动保护.该保护方案不仅可以避开电容电流对于差动保护的影响,而且有较强的抗过渡电阻能力.将该保护方案应用到不同电压等级的四回线的主保护中,保护性能优越,不仅可以可靠动作,还避免了电容

  5. 基于电力电子调压电路的直流不停电融冰技术%Study of DC Ice-melting Without Power Cut Technology Based on Power Electronic Voltage-regulating Circuits

    Institute of Scientific and Technical Information of China (English)

    宋洁莹; 周飞; 拜润清; 蔡林海; 荆平

    2014-01-01

    Ice-coating of transmission lines every year in winter seriously affects reliable operation of power grids in China. Present electrical ice-melting methods all require power interruption, which brings negative effects to power grid. To address this issue, principles and feasibility of DC and AC ice-melting without power cut methods are analyzed, a new DC ice-melting without power cut method is proposed, and its circuit structure and capacity requirements are analyzed. At last, a model of the ice-melting device under PSCAD is built and its principles and functions are verified by simulation. The DC ice-melting without power cut device based on power electronic voltage-regulating circuits has high working efficiency and little influence upon regular power supplying.%我国冬季出现的输电线路覆冰的情况严重影响电力系统的可靠运行,现有的电力融冰均需停电进行,对系统影响较大。针对这个问题,分析交、直流不停电融冰的原理及可行性,提出一种新型的不停电直流融冰方法,对其电路结构和所需容量进行分析,并建立不停电融冰装置仿真模型,进行原理和功能验证。基于电力电子调压电路的不停电直流融冰装置具有融冰效率高且不影响线路供电的优点。

  6. Detection Method of High Voltage Circuit Breaker and Its Application Based on Ultrasonic Sensor%基于超声波传感器的高压断路器检测方法及应用

    Institute of Scientific and Technical Information of China (English)

    程旭东; 王兰芳

    2011-01-01

    In order to improve the efficiency and precision of velocity detection of High voltage circuit breaker (HVCB), a detection method based on ultrasonic sensor is proposed. The TR40 series of ultrasonic transducer is adopted to generate ultrasonic signals. The emission sensor is fixed on the breaker's closing/opening connection rod while receiving sensor installed in the universal triangular bracket. By measuring the frequency difference between emission signals and receiving signals, instantaneous velocity of the current circuit breaker operation can be calculated. Furthermore, a mechanical characteristic detection instrument for HVCB is developed. Field test results show that the ultrasonic sensor is convenient to be installed and the results has high accuracy and small uncertainty, which satisfies the field test requirements for velocity detection of HVCB.%为提高高压断路器速度检测效率与精度,提出了一种基于超声波传感器的高压断路器速度检测方法,利用TR40系列超声波换能器产生超声波信号,将发射传感器固定于断路器合/分连接杆上,接收传感器安装在万能三角支架上,通过统计接收和发送信号的频率差,计算当前断路器运行的瞬时速度,并在此基础上开发了断路器机械特性测试仪.现场试验结果表明,超声波传感器安装方便、测试数据精度较高、不确定度小,能满足高压断路器现场速度检测的需求.

  7. Simulation Study of Induced Voltage and Current of Power Transmission Line in Double Circuits on the Same Tower%同塔双回输电线路中感应电压和电流仿真研究

    Institute of Scientific and Technical Information of China (English)

    孔晨华; 杨建军; 山磊; 孔令新; 李正鹏

    2015-01-01

    同塔电路回线中,当发生一回线停电检修且另一回线路正常运行时,基于其所在输电线路间电磁感应及静电感应的作用,势必会出现检修时的感应电压和电流的现象,会对低压线路上的维修人员造成威胁,针对此,文章将以同塔双回的500 kV高压输电线路为例,并结合对EMTP仿真软件的利用,分析了不正常运行情况下的感应电压、电流,验证了仿真计算结果的有效性。%In line with circuit towers, when a time line outage maintenance and normal operation of different lines, based on its transmission line electromagnetic induction and the effect of electrostatic induction, will appear the phenomenon of induction voltage and current, maintenance will pose a threat to the low-tension wire road maintenance personnel, for this. Taking the 500 kV transmission lines with double towers as an example, combined with the use of EMTP simulation software, the abnormal operation of induction voltage, current were analyzed, the validity of the simulation calculation results was veriifed.

  8. A dividing issue

    DEFF Research Database (Denmark)

    Gamborg, Christian; Jensen, Frank Søndergaard; Sandøe, Peter

    2016-01-01

    . While there was broad agreement across all three groups that recreational hunting of naturally occurring “surplus” wildlife is acceptable, the release of farm-reared game birds for shooting was a dividing issue, both within the groups and between them. The majority of participants (51%) in the survey...

  9. Analogue Square Root Calculator Circuit Designed With Logarithmic Amplifiers

    OpenAIRE

    2016-01-01

    In many applications, it has been necessary to calculate square roots of some numbers which are correspond to some voltages values. In this study such an analogue calculator has been designed and simulated in computer medium. Circuit consist of one logarithmic and one antilogarithmic amplifier connected in cascade. The component values of circuit chosen so that the output voltage of circuit is equal to square root of input voltage. The performance of designed circuit is investigated by applyi...

  10. Short-circuit impedance measurement

    DEFF Research Database (Denmark)

    Pedersen, Knud Ole Helgesen; Nielsen, Arne Hejde; Poulsen, Niels Kjølstad

    2003-01-01

    Methods for estimating the short-circuit impedance in the power grid are investigated for various voltage levels and situations. The short-circuit impedance is measured, preferably from naturally occurring load changes in the grid, and it is shown that such a measurement system faces different...

  11. 30 CFR 77.904 - Identification of circuit breakers.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Identification of circuit breakers. 77.904... COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.904 Identification of circuit breakers. Circuit breakers shall be labeled to show which circuits they control unless identification...

  12. 30 CFR 75.900-1 - Circuit breakers; location.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Circuit breakers; location. 75.900-1 Section 75... Alternating Current Circuits § 75.900-1 Circuit breakers; location. Circuit breakers used to protect low-and medium-voltage circuits underground shall be located in areas which are accessible for...

  13. Studying Voltage Transformer Ferroresonance

    Directory of Open Access Journals (Sweden)

    Hamid Radmanesh

    2012-09-01

    Full Text Available This study studies the effect of Circuit Breaker Shunt Resistance (CBSR, Metal Oxide Vaistor (MOV and Neutral earth Resistance (NR on the control of ferroresonance in the voltage transformer. It is expected that NR can controlled ferroresonance better than MOV and CBSR. Study has been done on a one phase voltage transformer rated 100 VA, 275 kV. The simulation results reveal that considering the CBSR and MOV exhibits a great mitigating effect on ferroresonance overvoltages, but these resistances cannot control these phenomena for all range of parameters. By applying NR to the system structure, ferroresonance has been controlled and its amplitude has been damped for all parameters values.

  14. 高压大容量D-STATCOM主电路的比较与分析%Comparison and analysis of high-voltage large-capacity D-STATCOM main circuit

    Institute of Scientific and Technical Information of China (English)

    杨振宇; 许胜; 许杏桃

    2011-01-01

    分析了现有典型高压大容量D-STATCOM的电路结构,特别比较了链式结构中△链和Y链各自的优劣.构建了一种背靠背H桥链节的Y链主电路,该结构具有能量可双向流动、链节直流电压由整流H桥单独控制、便于采用n+1冗余策略及便于高压大容量扩展等优点.给出了基于αβ坐标变换的Ip-Iq电流型补偿策略和故障链节旁路的容错控制,以及故障链节旁路后避免不同相之间的最小采样间隔的CPS-SPWM的调整算法.对5链节串联1.14 kV/100kV·A样机进行了不对称负荷补偿实验和故障链节旁路容错实验,实验结果验证了所提结构和控制算法的正确性和有效性.%The circuit structure of present high-voltage large-capacity D-STATCOM is analyzed and the features of link structure are compared between △-type and Y-type. A Y-type back-to-back H-bridge inverter is constructed,which has some advantages:bidirectional energy flow,DC-link voltage controlled individually by H-rectifier,adaptive to n+ 1 redundancy,easy extension to high-voltage and large-capacitance,etc. The Ip-Iq current compensation strategy based on α-β coordinates conversion,the fault-tolerant control of faulty link bypass and its correlative CPS-SPWM adjustment algorithm to avoid the minimum sampling interval between different phases are proposed. The asymmetric load compensation experiment and the link-bypass fault-tolerance experiment are carried out with a 1.14kV/100 kV·A prototype of 5 serial links and the experimental results testify the validity and effectiveness of the proposed structure and algorithm.

  15. Design of an improved RCD buffer circuit for full bridge circuit

    Science.gov (United States)

    Yang, Wenyan; Wei, Xueye; Du, Yongbo; Hu, Liang; Zhang, Liwei; Zhang, Ou

    2017-05-01

    In the full bridge inverter circuit, when the switch tube suddenly opened or closed, the inductor current changes rapidly. Due to the existence of parasitic inductance of the main circuit. Therefore, the surge voltage between drain and source of the switch tube can be generated, which will have an impact on the switch and the output voltage. In order to ab sorb the surge voltage. An improve RCD buffer circuit is proposed in the paper. The peak energy will be absorbed through the buffer capacitor of the circuit. The part energy feedback to the power supply, another part release through the resistor in the form of heat, and the circuit can absorb the voltage spikes. This paper analyzes the process of the improved RCD snubber circuit, According to the specific parameters of the main circuit, a reasonable formula for calculating the resistance capacitance is given. A simulation model will be modulated in Multisim, which compared the waveform of tube voltage and the output waveform of the circuit without snubber circuit with the improved RCD snubber circuit. By comparing and analyzing, it is proved that the improved buffer circuit can absorb surge voltage. Finally, experiments are demonstrated to validate that the correctness of the RC formula and the improved RCD snubber circuit.

  16. Divide and Pacify

    DEFF Research Database (Denmark)

    Vanhuysse, Pieter

    by pointing to deeper political motives and wider sociological consequences. Divide and Pacify was nominated for the American Sociological Association's Award for Distinguished Contribution to Scholarship 2006, Section on Political Sociology. Praise and reviews: "Pieter Vanhuysse…is a political scientist...... across many settings in which democratic governments face the task of implementing costly reforms in complex and uncertain policy environments." –János Kornai, Harvard University "Divide and Pacify contains a provocative thesis about the manner in which political strategy was used to consolidate...... policy." - Kenneth Shepsle, Professor, Harvard University and Fellow, American Academy of Sciences "In post-communist Europe, international advice—for example from the International Monetary Fund and the World Bank—to reforming governments focused heavily on economic policy. The political imperative...

  17. Electron-deficient N-alkyloyl derivatives of thieno[3,4-c]pyrrole-4,6-dione yield efficient polymer solar cells with open-circuit voltages > 1 v

    KAUST Repository

    Warnan, Julien

    2014-05-13

    Poly(benzo[1,2-b:4,5-b′]dithiophene-thieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD) polymer donors yield some of the highest open-circuit voltages (V OC, ca. 0.9 V) and fill factors (FF, ca. 70%) in conventional bulk-heterojunction (BHJ) solar cells with PCBM acceptors. Recent work has shown that the incorporation of ring substituents into the side chains of the BDT motifs in PBDTTPD can induce subtle variations in material properties, resulting in an increase of the BHJ device VOC to ∼1 V. In this contribution, we report on the synthesis of N-alkyloyl-substituted TPD motifs (TPD(CO)) and show that the electron-deficient motifs can further lower both the polymer LUMO and HOMO levels, yielding device VOC > 1 V (up to ca. 1.1 V) in BHJ solar cells with PCBM. Despite the high VOC achieved (i.e., low polymer HOMO), BHJ devices cast from TPD(CO)-based polymer donors can reach power conversion efficiencies (PCEs) of up to 6.7%, making these promising systems for use in the high-band-gap cell of tandem solar cells. © 2014 American Chemical Society.

  18. Effects of the charge-transfer reorganization energy on the open-circuit voltage in small-molecular bilayer organic photovoltaic devices: comparison of the influence of deposition rates of the donor.

    Science.gov (United States)

    Lee, Chih-Chien; Su, Wei-Cheng; Chang, Wen-Chang

    2016-05-14

    The theoretical maximum of open-circuit voltage (VOC) of organic photovoltaic (OPV) devices has yet to be determined, and its origin remains debated. Here, we demonstrate that VOC of small-molecule OPV devices can be improved by controlling the deposition rate of a donor without changing the interfacial energy gap at the donor/acceptor interface. The measurement of external quantum efficiency and electroluminescence spectra facilitates the observation of the existence of charge transfer (CT) states. A simplified approach by reusing the reciprocity relationship for obtaining the properties of the CT states is proposed without introducing complex techniques. We compare experimental and fitting results and propose that reorganization energy is the primary factor in determining VOC instead of either the CT energy or electronic coupling term in bilayer OPV devices. Atomic force microscopy images indicate a weak molecular aggregation when a higher deposition rate is used. The results of temperature-dependent measurements suggest the importance of molecular stacking for the CT properties.

  19. Dependence of open-circuit voltage of SnO2-nSi solar cells; SnO2-nSi taiyo denchi no sanka ondo menhoi izonsei

    Energy Technology Data Exchange (ETDEWEB)

    Shinoda, S.; Shimizu, A.; Yano, K.; Kasuga, M. [Yamanashi University, Yamanashi (Japan). Faculty of Engineering

    1997-11-25

    Although metal(or semiconductor)-semiconductor solar cells, SnO2-nSi solar cell for example, are superior in cost and efficiency, its barrier height and open-circuit voltage V(oc) are lower than those of p-n junctions. To improve these defects, study was made on the dependence of V(oc) on oxidation temperature and surface orientation using various solar cells prepared from (100)Si and (111)Si under various oxidation conditions. As a result, the density of surface states increases with a decrease in oxidation temperature of Si substrates, resulting in an increase in diode factor and V(oc). In this case, since oxide films are extremely thin and contribution of non-terminated bonds is large in the initial oxidation stage, the quantity of dangling bonds is larger in (100) plane than (111) plane, resulting in an increase in diode factor and V(oc). Since the surface energy level (the degree of electrons dominated by acceptor-like surface state from this level to the top of a valence band) of (100) Si is lower than that of (111) Si, the effective barrier height and V(oc) increase. 28 refs., 6 figs., 2 tabs.

  20. Capacity-loss diagnostic and life-time prediction in lithium-ion batteries: Part 1. Development of a capacity-loss diagnostic method based on open-circuit voltage analysis

    Science.gov (United States)

    Wang, Tiansi; Pei, Lei; Wang, Tingting; Lu, Rengui; Zhu, Chunbo

    2016-01-01

    Effective capacity-loss diagnosis and life-time prediction are the foundations of battery second-use technology and will play an important role in the development of the new energy industry. Of the two, the capacity-loss diagnostic, as a precondition of the life-time prediction, needs to be studied first. Performing a capacity-loss diagnosis for an aging cell consists of finding the decisive degradation mechanisms for the cell's capacity degradation. Because a cell's capacity just equals the span of the open-circuit voltage (OCV), when suspect degradation mechanisms affect a cell's capacity, they will leave corresponding and particular clues in the OCV curve. Taking a cell's OCV as the diagnostic indicator, a multi-mechanistic and non-destructive diagnostic method is developed in this paper. To establish an unambiguous relationship between OCV changes and the combinations of the decisive mechanisms, all the possible OCV changes under various aging situations are systematically analyzed based on a novel simultaneous coordinate system, in which the effects of each suspect capacity-loss mechanism on the OCV curve can be clearly represented. As a summary of the analysis results, a straightforward diagnostic flowchart is presented. By following the flowchart, an aging cell can be diagnosed within three steps by observation of the OCV changes.

  1. Parametric frequency dividers in satellite communications

    OpenAIRE

    Kosmopoulos, S. A.; Lo Forti, R.; Saggese, E.

    1990-01-01

    The performance of two different parametric frequency dividers, using GaAs varactor diodes in a balanced circuit configuration implemented by planar (microstrip) or quasi-planar (finline, coupled finline ) elements respectively, is presented. The almost phase noise free operation of these devices allows the construction of efficient miniature synthesizers or carrier recovering schemes, incorporated on the space segment of Ku- or Ka-band satellite communications systems.

  2. CMOS Direct-Injection Divide-by-3 Injection-Locked Frequency Dividers

    Institute of Scientific and Technical Information of China (English)

    Chia-Wei; Chang; Jhin-Fang; Huang; Sheng-Lyang; Jang; Ying-Hsiang; Liao; Miin-Horng; Juang

    2010-01-01

    <正>This paper proposes CMOS LC-tank divide-by-3 injection locked frequency dividers(ILFDs)fabricated in 0.18μn and 90nm CMOS process and describes the circuit design,operation principle and measurement results of the ILFDs.The ILFDs use two injection series-MOSFETs across the LC resonator and a differential injection signal is applied to the gates of injection MOSFETs.The direct-injection divide-by-3 ILFDs are potential for radio-frequency application and can have wide locking range.

  3. Bridging the Digital Divide

    DEFF Research Database (Denmark)

    Frølunde, Lisbeth

    2002-01-01

    The article concerns the digital divide, meaning the social inequity in the access and the opportunities for gaining competencies with ICT (information and communication technologies). Problematic issues are highlighted in relation to experiences during visits to several Computer Clubhouses......, a network of multimedia workshops for youth in the USA. There are references to the learning philosophy Constructionism, which originates from MIT Media Lab and is the basis for the Computer Clubhouse project. Abstract : The consortium for Math and Science at Learning Lab Denmark and the Ministry...... of significant European initiatives promoting the recruitment and quality of the science and technology educations....

  4. CROSSING THE GREAT DIVIDE

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    The safety and quality standards divide is the most severe challenge facing China’s toy industry China was blamed a spate of toy recalls this year.Overseas customers and press pointed the finger at China’s toy makers who had manu- factured toys according to their con- tracts.It was later found that most of the toy problems came from design faults of brand holders,not from Chinese manufacturers. To Wei Chuangzhong,Vice Minister of the General Administration of Quality Supervision,Inspection and Quarantine (AQSIQ),the cavalcade of negative press coverage overseas has been unfair and bad for China’s manufacturers.

  5. Modern TTL circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Modern TTL Circuits Manual provides an introduction to the basic principles of Transistor-Transistor Logic (TTL). This book outlines the major features of the 74 series of integrated circuits (ICs) and introduces the various sub-groups of the TTL family.Organized into seven chapters, this book begins with an overview of the basics of digital ICs. This text then examines the symbology and mathematics of digital logic. Other chapters consider a variety of topics, including waveform generator circuitry, clocked flip-flop and counter circuits, special counter/dividers, registers, data latches, com

  6. Monitoring the Digital Divide

    Energy Technology Data Exchange (ETDEWEB)

    Cottrell, Les

    2003-05-28

    It is increasingly important to support the large numbers of scientists working in remote areas and having low bandwidth access to the Internet. This will continue to be the case for years to come since there is evidence from PingER performance measurements that the, so-called, digital divide is not decreasing. In this work, we review the collaborative work of The Abdus Salam International Center for Theoretical Physics (ICTP) in Trieste, a leading organization promoting science dissemination in the developing world- and SLAC in Stanford, to monitor by PingER, Universities and Research Institutions all over the developing world following the recent ''Recommendations of Trieste'' to help bridge the digital divide. As a result, PingER's deployment now covers the real-time monitoring of worldwide Internet performance and, in particular, West and Central Africa for the first time. We report on the results from the ICTP sites and quantitatively identify regions with poor performance, identify trends, discuss experiences and future work.

  7. Logarithmic circuit with wide dynamic range

    Science.gov (United States)

    Wiley, P. H.; Manus, E. A. (Inventor)

    1978-01-01

    A circuit deriving an output voltage that is proportional to the logarithm of a dc input voltage susceptible to wide variations in amplitude includes a constant current source which forward biases a diode so that the diode operates in the exponential portion of its voltage versus current characteristic, above its saturation current. The constant current source includes first and second, cascaded feedback, dc operational amplifiers connected in negative feedback circuit. An input terminal of the first amplifier is responsive to the input voltage. A circuit shunting the first amplifier output terminal includes a resistor in series with the diode. The voltage across the resistor is sensed at the input of the second dc operational feedback amplifier. The current flowing through the resistor is proportional to the input voltage over the wide range of variations in amplitude of the input voltage.

  8. Algebraic circuits

    CERN Document Server

    Lloris Ruiz, Antonio; Parrilla Roure, Luis; García Ríos, Antonio

    2014-01-01

    This book presents a complete and accurate study of algebraic circuits, digital circuits whose performance can be associated with any algebraic structure. The authors distinguish between basic algebraic circuits, such as Linear Feedback Shift Registers (LFSRs) and cellular automata, and algebraic circuits, such as finite fields or Galois fields. The book includes a comprehensive review of representation systems, of arithmetic circuits implementing basic and more complex operations, and of the residue number systems (RNS). It presents a study of basic algebraic circuits such as LFSRs and cellular automata as well as a study of circuits related to Galois fields, including two real cryptographic applications of Galois fields.

  9. Modular high voltage power supply for chemical analysis

    Science.gov (United States)

    Stamps, James F.; Yee, Daniel D.

    2008-07-15

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  10. Synthesis of PCDTBT-based fluorinated polymers for high open-circuit voltage in organic photovoltaics: towards an understanding of relationships between polymer energy levels engineering and ideal morphology control.

    Science.gov (United States)

    Kim, Jonggi; Yun, Myoung Hee; Kim, Gi-Hwan; Lee, Jungho; Lee, Sang Myeon; Ko, Seo-Jin; Kim, Yiho; Dutta, Gitish K; Moon, Mijin; Park, Song Yi; Kim, Dong Suk; Kim, Jin Young; Yang, Changduk

    2014-05-28

    The introduction of fluorine (F) atoms onto conjugated polymer backbone has verified to be an effective way to enhance the overall performance of polymer-based bulk-heterojunction (BHJ) solar cells, but the underlying working principles are not yet fully uncovered. As our attempt to further understand the impact of F, herein we have reported two novel fluorinated analogues of PCDTBT, namely, PCDTFBT (1F) and PCDT2FBT (2F), through inclusion of either one or two F atoms into the benzothiadiazole (BT) unit of the polymer backbone and the characterization of their physical properties, especially their performance in solar cells. Together with a profound effect of fluorination on the optical property, nature of charge transport, and molecular organization, F atoms are effective in lowering both the HOMO and LUMO levels of the polymers without a large change in the energy bandgaps. PCDTFBT-based BHJ solar cell shows a power conversion efficiency (PCE) of 3.96 % with high open-circuit voltage (VOC) of 0.95 V, mainly due to the deep HOMO level (-5.54 eV). To the best of our knowledge, the resulting VOC is comparable to the record VOC values in single junction devices. Furthermore, to our delight, the best PCDTFBT-based device, prepared using 2 % v/v diphenyl ether (DPE) additive, reaches the PCE of 4.29 %. On the other hand, doubly-fluorinated polymer PCDT2FBT shows the only moderate PCE of 2.07 % with a decrease in VOC (0.88 V), in spite of the further lowering of the HOMO level (-5.67 eV) with raising the number of F atoms. Thus, our results highlight that an improvement in efficiency by tuning the energy levels of the polymers by means of molecular design can be expected only if their truly optimized morphologies with fullerene in BHJ systems are materialized.

  11. Quasi-Linear Circuit

    Science.gov (United States)

    Bradley, William; Bird, Ross; Eldred, Dennis; Zook, Jon; Knowles, Gareth

    2013-01-01

    This work involved developing spacequalifiable switch mode DC/DC power supplies that improve performance with fewer components, and result in elimination of digital components and reduction in magnetics. This design is for missions where systems may be operating under extreme conditions, especially at elevated temperature levels from 200 to 300 degC. Prior art for radiation-tolerant DC/DC converters has been accomplished utilizing classical magnetic-based switch mode converter topologies; however, this requires specific shielding and component de-rating to meet the high-reliability specifications. It requires complex measurement and feedback components, and will not enable automatic re-optimization for larger changes in voltage supply or electrical loading condition. The innovation is a switch mode DC/DC power supply that eliminates the need for processors and most magnetics. It can provide a well-regulated voltage supply with a gain of 1:100 step-up to 8:1 step down, tolerating an up to 30% fluctuation of the voltage supply parameters. The circuit incorporates a ceramic core transformer in a manner that enables it to provide a well-regulated voltage output without use of any processor components or magnetic transformers. The circuit adjusts its internal parameters to re-optimize its performance for changes in supply voltage, environmental conditions, or electrical loading at the output

  12. Solid-State dc Circuit Breaker

    Science.gov (United States)

    Harvey, P.

    1983-01-01

    Circuit breaker with no moving parts protects direct-current (dc) loads. Current which circuit breaker opens (trip current) is adjustable and so is time delay before breaker trips. Forward voltage drop rises from 0.6 to 1.2 V as current rises to trip point. Breaker has two terminals, like fuse, therefore replaces fuse in dc circuit. Powered by circuit it protects and reset by either turning off power source or disconnecting load.

  13. Why do bacteria divide?

    Directory of Open Access Journals (Sweden)

    Vic eNorris

    2015-04-01

    Full Text Available The problem of not only how but also why cells divide can be tackled using recent ideas. One idea from the origins of life – Life as independent of its constituents – is that a living entity like a cell is a particular pattern of connectivity between its constituents. This means that if the growing cell were just to get bigger the average connectivity between its constituents per unit mass – its cellular connectivity – would decrease and the cell would lose its identity. The solution is division which restores connectivity. The corollary is that the cell senses decreasing cellular connectivity and uses this information to trigger division. A second idea from phenotypic diversity – Life on the Scales of Equilibria – is that a bacterium must find strategies that allow it to both survive and grow. This means that it has learnt to reconcile the opposing constraints that these strategies impose. The solution is that the cell cycle generates daughter cells with different phenotypes based on sufficiently complex equilibrium and non-equilibrium cellular compounds and structures appropriate for survival and growth, respectively, alias `hyperstructures'. The corollary is that the cell senses both the quantity of equilibrium material and the intensity of use of non-equilibrium material and then uses this information to trigger the cell cycle. A third idea from artificial intelligence – Competitive Coherence – is that a cell selects the active subset of elements that actively determine its phenotype from a much larger set of available elements. This means that the selection of an active subset of a specific size and composition must be done so as to generate both a coherent cell state, in which the cell’s contents work together harmoniously, and a coherent sequence of cell states, each coherent with respect to itself and to an unpredictable environment. The solution is the use of a range of mechanisms ranging from hyperstructure dynamics

  14. Why do bacteria divide?

    Science.gov (United States)

    Norris, Vic

    2015-01-01

    The problem of not only how but also why cells divide can be tackled using recent ideas. One idea from the origins of life - Life as independent of its constituents - is that a living entity like a cell is a particular pattern of connectivity between its constituents. This means that if the growing cell were just to get bigger the average connectivity between its constituents per unit mass - its cellular connectivity - would decrease and the cell would lose its identity. The solution is division which restores connectivity. The corollary is that the cell senses decreasing cellular connectivity and uses this information to trigger division. A second idea from phenotypic diversity - Life on the Scales of Equilibria - is that a bacterium must find strategies that allow it to both survive and grow. This means that it has learnt to reconcile the opposing constraints that these strategies impose. The solution is that the cell cycle generates daughter cells with different phenotypes based on sufficiently complex equilibrium (E) and non-equilibrium (NE) cellular compounds and structures appropriate for survival and growth, respectively, alias 'hyperstructures.' The corollary is that the cell senses both the quantity of E material and the intensity of use of NE material and then uses this information to trigger the cell cycle. A third idea from artificial intelligence - Competitive Coherence - is that a cell selects the active subset of elements that actively determine its phenotype from a much larger set of available elements. This means that the selection of an active subset of a specific size and composition must be done so as to generate both a coherent cell state, in which the cell's contents work together harmoniously, and a coherent sequence of cell states, each coherent with respect to itself and to an unpredictable environment. The solution is the use of a range of mechanisms ranging from hyperstructure dynamics to the cell cycle itself.

  15. 30 CFR 75.800-1 - Circuit breakers; location.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Circuit breakers; location. 75.800-1 Section 75.800-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY... § 75.800-1 Circuit breakers; location. Circuit breakers protecting high-voltage circuits entering...

  16. 30 CFR 75.800-4 - Testing, examination, and maintenance of circuit breakers; record.

    Science.gov (United States)

    2010-07-01

    ... circuit breakers; record. 75.800-4 Section 75.800-4 Mineral Resources MINE SAFETY AND HEALTH... Underground High-Voltage Distribution § 75.800-4 Testing, examination, and maintenance of circuit breakers... adjustment of all circuit breakers protecting high-voltage circuits which enter any underground area of...

  17. 30 CFR 75.800-3 - Testing, examination and maintenance of circuit breakers; procedures.

    Science.gov (United States)

    2010-07-01

    ... High-Voltage Distribution § 75.800-3 Testing, examination and maintenance of circuit breakers; procedures. (a) Circuit breakers and their auxiliary devices protecting underground high-voltage circuits... shall include visual observation of all components of the circuit breaker and its auxiliary devices,...

  18. Characterization of the voltage control systems and speed of a synchronous machine of high power for short circuit testing; Caracterizacion de los sistemas de control de voltaje y velocidad de una maquina sincrona de alta potencia para pruebas de corto circuito

    Energy Technology Data Exchange (ETDEWEB)

    Segura Ozuna, Victor Octavio; Hernandez Rodriguez, Isaura Victoria; Alcaide Godinez, Indira Xochiquetzal; Garduno Ramirez, Raul; Montero Cervantes, Julio Cesar [Instituto de Investigaciones Electricas, Cuernavaca, Morelos (Mexico); Ruiz Rodriguez, Genaro; Martinez Torres; Ricardo [CFE-LAPEM, Irapuato, Guanajuato (Mexico)

    2012-07-01

    This paper introduces a characterization of the behavior of the speed and voltage control systems of a special purpose synchronous machine (GCC) based on measuring and monitoring physical signals, and recording of the sampled waveforms. Basically, the GCC supplies the energy to perform high-power short-circuits tests to certify electrical equipment and components, as required by the Comision Federal de Electricidad (CFE) in Mexico. The GCC operates alternately as motor and generator. With the GCC operating as motor, speed control during startup, acceleration, re-acceleration and braking is carried out by a static frequency converter (SFC). Complementary, the voltage controller manipulates excitation power to control terminal voltage when the GCC operates as generator and regulates excitation current when the GCC operates as motor. Compared to conventional voltage regulation systems, which must go off in case of short-circuit, the GCC voltage regulator must keep controlling field excitation to maintain the required line current and terminal voltage during short-circuit tests. Monitoring of physical signals was carried out with a portable data acquisition system based on SCXI and PXI digital platforms. A total of 78 signals were monitored with a 6 kHz sampling rate that was enough to obtain detailed signal waveforms. Data captured was processed and plotted for analysis. The signal graphs show the current real behavior of both, the voltage control system and the speed control system, and constitute a precise characterization of their behavior. [Spanish] Este documento presenta una caracterizacion del comportamiento de los sistemas de control de velocidad y voltaje de una maquina sincrona de proposito especial (GCC) basada en la medicion y monitoreo de senales fisicas, asi como en el registro de las formas de onda muestreadas. Basicamente, la GCC suministra la energia para efectuar pruebas de corto circuito de alta potencia para certificar equipo y componentes

  19. Um critério para determinar a regulagem da tensão em soldagem MIG/MAG por curto-circuito A criterion to determine voltage setting in short-circuit GMAW

    Directory of Open Access Journals (Sweden)

    Gabriel Maradei Carneiro de Rezende

    2011-06-01

    Full Text Available Este trabalho apresenta um estudo exploratório sobre um critério denominado "Critério Laprosolda para Estabilidade de Transferência em MIG/MAG com curto-circuito", o qual tem por finalidade uma análise quantitativa da regularidade da transferência metálica para regulagem de parâmetros para soldagem MIG/MAG por curto circuito convencional. Inicialmente é apresentado o embasamento para elaboração deste critério. A avaliação da confiabilidade do mesmo foi feita por meio de soldagens e comparações dos resultados com o rendimento de deposição e com as características geométricas do cordão de solda. Para isto, chapas de teste com 3,18 mm de espessura e abertura de raiz de 1 mm entre elas foram soldadas, dentro dos mesmos parâmetros de corrente e velocidade de alimentação, usando arame AWS ER70S-6 de 1,2 mm de diâmetro protegido pela mistura Argônio 85% - Dióxido de Carbono 15%. Para atender a relação proposta, varreu-se a regulagem de tensões de soldagem desde valores muito baixos até muito altos para o que se esperava para esta condição de soldagem. Os resultados confirmam a efetividade do "Índice de Regularidade" como meio de avaliar regulagens de soldagem MIG/MAG visando minimizar respingos e otimizar o acabamento do cordão.This paper presents an exploratory study on a criterion called "Criterion for Stability Laprosolda Transfer in MIG / MAG with short circuit", which aims at a quantitative analysis of the regularity of metal transfer for setting parameters for MIG / MAG conventional in short circuit. Initially it is stated the foundation for development of this criterion. The evaluation of that was made by welding and comparisons of results with the efficiency of deposition and the geometric characteristics of the weld bead. For this, the test plates with 3.18 mm thick and 1 mm gap between them was welded in the same range of current and feeding speed, using wire AWS ER70S-6 1.2 mm of diameter protected by the

  20. Modeling and Simulation of Low Voltage Arcs

    NARCIS (Netherlands)

    Ghezzi, L.; Balestrero, A.

    2010-01-01

    Modeling and Simulation of Low Voltage Arcs is an attempt to improve the physical understanding, mathematical modeling and numerical simulation of the electric arcs that are found during current interruptions in low voltage circuit breakers. An empirical description is gained by refined electrical

  1. Modeling and Simulation of Low Voltage Arcs

    NARCIS (Netherlands)

    Ghezzi, L.; Balestrero, A.

    2010-01-01

    Modeling and Simulation of Low Voltage Arcs is an attempt to improve the physical understanding, mathematical modeling and numerical simulation of the electric arcs that are found during current interruptions in low voltage circuit breakers. An empirical description is gained by refined electrical m

  2. 750kV同塔同窗同相序双回紧凑型线路的潜供电流和感应电压%Research on Secondary-Arc Currents and Induced Voltages for 750 kV Compact Double-Circuit Transmission Lines on the Same Tower With the Same Phase Sequence in the Same Tower Window

    Institute of Scientific and Technical Information of China (English)

    王晓彤; 班连庚; 朱普轩; 郑彬

    2011-01-01

    A model of 750kV compact double-circuit transmission lines on the same tower with the same phase sequence in the same tower window is built by use of electromagnetic transient program (EMTP). The problems of secondary-arc currents and recovery voltages, induced voltages and induced currents are studied when the structure of double-circuit compact transmission lines on the same tower with the same phase sequence in the same tower window are applied to full or partial length of the project. Research results show that in the viewpoint of suppressing secondary arc current, recovery voltage, induced voltage and induced current, it is not suitable to adopt such a line structure, i.e., double-circuit transmission lines on the same tower with the same phase sequence in the same tower window, to full length of the project while high voltage shunt reactors are configured. For this reason, following scheme that conventional type is used for the main part of this project and the structure of compact double-circuit transmission lines on the same tower with the same phase sequence in the same tower window is only applied in the sections where the land for line corridors is undersupplied. If the length of the section where the compact double-circuit transmission lines on the same tower with the same phase sequence in the same tower window is applied is short enough, the values of secondary arc current and induced voltages can be suppressed into a rational level. For short transmission lines where the high voltage shunt reactors are not to be configured, if the problem of switching-off induced currents can be solved, it is worthy of consideration to adopt the structure of compact double-circuit transmission lines on the same tower with the same phase sequence in the same tower window to the full lengths of transmission lines.%使用电磁暂态程序(electromagnetic transient program,EMTP),建立了750kV同塔同窗同相序双回紧凑型线路模型.研究了全线或部分采

  3. VOLTAGE REGULATORS ASYNCHRONOUS GENERATORS

    Directory of Open Access Journals (Sweden)

    Grigorash O. V.

    2015-06-01

    Full Text Available A promising is currently the use of asynchronous generators with capacitive excitation as a source of electricity in stand-alone power systems. Drive asynchronous generators may exercise as a thermal engine and wind wheel wind power plant or turbines of small hydropower plants. The article discusses the structural and schematics of voltage stabilizers and frequency of asynchronous generators with improved operational and technical specifications. Technical novelty of design solutions of the magnetic system and stabilizers asynchronous generator of electricity parameters confirmed by the patents for the invention of the Russian Federation. The proposed technical solution voltage stabilizer asynchronous generators, can reduce the weight of the block capacitors excitation and reactive power compensation, as well as to simplify the control system power circuit which has less power electronic devices. For wind power plants it is an important issue not only to stabilize the voltage of the generator, but also the frequency of the current. Recommend functionality stabilizer schemes parameters of electric power made for direct frequency converters with artificial and natural switching power electronic devices. It is also proposed as part of stabilization systems use single-phase voltage, three-phase transformers with rotating magnetic field, reduce the level of electromagnetic interference generated by power electronic devices for switching, enhance the efficiency and reliability of the stabilizer.

  4. Generator of ultrashort megavolt voltage pulses

    CERN Document Server

    Zheltov, K A; Shalimanov, V F

    2002-01-01

    Paper describes approx 3 ns duration and > 1 MW amplitude voltage pulse generator under high-ohmic (approx 450 Ohm) load. Generator comprises pulse transformer with magnetized core, as well as, resonance tuned circuit of high-voltage solenoid and accumulating spaces of a shaping line containing, moreover, spark gap to switch charge in transmitting line. Paper contains the results of voltage measuring in generator basic units

  5. Triple voltage dc-to-dc converter and method

    Science.gov (United States)

    Su, Gui-Jia

    2008-08-05

    A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

  6. Three-phase Short Circuit Calculating Method Based on Pre-computed Surface for Doubly-fed Induction Generators Considering Low-voltage Ride Through%计及低电压穿越的双馈感应发电机三相短路运算曲面法

    Institute of Scientific and Technical Information of China (English)

    王强钢; 周念成; 李喜兰; 谢光莉

    2015-01-01

    The voltage support from conventional energy sources to doubly-fed induction generators (DFIGs) is analyzed by making the systems outside the coupling point of DFIG Thevenin equivalent.A short circuit calculating method based on pre-computed surface is proposed by developing the surface of short circuit current varying with the calculated reactance and the open circuit voltage.Moreover,for the transient feature differences of DFIG during the crowbar activation and deactivation, the rotor current peak is used to judge the activation,the relation between crowbar activation and post-fault terminal voltage is investigated.And the short circuit currents are derived by taking into account the rotor excitation and crowbar activation time delay.Finally,the pre-computed surfaces of short circuit current at different times are established,and the procedure for DFIG short circuit calculation is designed.The correctness of proposed method is verified by simulation.%分析了常规电源对双馈感应发电机(DFIG)的电压支撑作用,将 DFIG 接入点以外的系统进行戴维南等值,利用 DFIG 短路电流周期分量与计算电抗、开路电压的关系曲面,提出了 DFIG 接入电网的短路电流运算曲面法。针对撬棒投入和未投入时 DFIG 的暂态特性差异,以转子电流峰值为撬棒投入的判据,分析撬棒动作与故障后 DFIG 端电压关系;考虑转子励磁控制和撬棒动作延时,推导了 DFIG 三相短路电流计算式;制定不同时刻 DFIG 三相短路电流与计算电抗、开路电压运算曲面,给出计及低电压穿越的 DFIG 短路运算曲面法计算步骤,通过仿真验证该方法的正确性。

  7. Measurement of arc resistance and conductance during interruption of high frequency current on SF sub 6 circuit breaker. SF sub 6 gas shadanki no koshuha denryu shadanji no arc teiko, arc conductance no sokutei hoho

    Energy Technology Data Exchange (ETDEWEB)

    Okabe, S.; Yorozuya, T.; Zaima, E. (The Tokyo Electric Power Co. Inc., Tokyo (Japan)); Nishiwaki, S.; Ishikawa, M.; Nakamoto, T.; Yokota, T. (Toshiba Corp., Tokyo (Japan))

    1991-07-15

    A high-frequency surge may occur when a power ciruit breaker develops re-arcing or reignition at its interruption, but measuring the arc voltage is not easy as it is much lower than the circuit voltage, making diffecult to precisely analyze the surge phenomenon. Therefore, this paper describes building a test circuit simulating re-arcing in a 300 kV, SF{sub 6} gas buffer type model breaker, and measuring the high-frequency current and its arc voltage using the method described as follows. For instance, to minimize measurement errors caused from stray inductance voltage drop, an insulation spacer was installed in the vicinity of the breaker contact as a capacitance for the voltage-divider. The partial potential factor of the voltage-divider was set for measuring arc voltage of several kilovolts, and clippers were installed for large voltage signals. As a result of correcting various errors and preventing noise in optical transmission, the arc resistance and conductance were derived. 10 refs., 14 figs., 1 tab.

  8. Variational integrators for electric circuits

    Energy Technology Data Exchange (ETDEWEB)

    Ober-Blöbaum, Sina, E-mail: sinaob@math.upb.de [Computational Dynamics and Optimal Control, University of Paderborn (Germany); Tao, Molei [Courant Institute of Mathematical Sciences, New York University (United States); Cheng, Mulin [Applied and Computational Mathematics, California Institute of Technology (United States); Owhadi, Houman; Marsden, Jerrold E. [Control and Dynamical Systems, California Institute of Technology (United States); Applied and Computational Mathematics, California Institute of Technology (United States)

    2013-06-01

    In this contribution, we develop a variational integrator for the simulation of (stochastic and multiscale) electric circuits. When considering the dynamics of an electric circuit, one is faced with three special situations: 1. The system involves external (control) forcing through external (controlled) voltage sources and resistors. 2. The system is constrained via the Kirchhoff current (KCL) and voltage laws (KVL). 3. The Lagrangian is degenerate. Based on a geometric setting, an appropriate variational formulation is presented to model the circuit from which the equations of motion are derived. A time-discrete variational formulation provides an iteration scheme for the simulation of the electric circuit. Dependent on the discretization, the intrinsic degeneracy of the system can be canceled for the discrete variational scheme. In this way, a variational integrator is constructed that gains several advantages compared to standard integration tools for circuits; in particular, a comparison to BDF methods (which are usually the method of choice for the simulation of electric circuits) shows that even for simple LCR circuits, a better energy behavior and frequency spectrum preservation can be observed using the developed variational integrator.

  9. INVESTIGATION ON EMI EFFECTS IN BANDGAP VOLTAGE REFERENCES

    OpenAIRE

    Fiori, Franco; Crovetti S., Paolo

    2002-01-01

    International audience; In this paper the susceptibility of integrated bandgap voltage references to Electromagnetic Interference (EMI) is investigated by on-chip measurements carried out on Kuijk and Tsividis bandgap circuits. These measurements highlight the offset in the reference voltage induced by continuous wave (CW) EMI and the complete failures which may be experienced by bandgap circuits. The role of the susceptibility of the startup circuit and of the operational amplifier which are...

  10. CMOS circuit design, layout and simulation

    CERN Document Server

    Baker, R Jacob

    2010-01-01

    The Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and much more. Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.

  11. Advanced on-chip divider for monolithic microwave VCO's

    Science.gov (United States)

    Peterson, Weddell C.

    1989-01-01

    High frequency division on a monolithic circuit is a critical technology required to significantly enhance the performance of microwave and millimeter-wave phase-locked sources. The approach used to meet this need is to apply circuit design practices which are essentially 'microwave' in nature to the basically 'digital' problem of high speed division. Following investigation of several promising circuit approaches, program phase 1 culminated in the design and layout of an 8.5 GHz (Deep Space Channel 14) divide by four circuit based on a dynamic mixing divider circuit approach. Therefore, during program phase 2, an 8.5 GHz VCO with an integral divider which provides a phase coherent 2.125 GHz reference signal for phase locking applications was fabricated and optimized. Complete phase locked operation of the monolithic GaAs devices (VCO, power splitter, and dynamic divider) was demonstrated both individually and as an integrated unit. The fully functional integrated unit in a suitable test fixture was delivered to NASA for engineering data correlation. Based on the experience gained from this 8.5 GHz super component, a monolithic GaAs millimeter-wave dynamic divider for operation with an external VCO was also designed, fabricated, and characterized. This circuit, which was also delivered to NASA, demonstrated coherent division by four at an input frequency of 24.3 GHz. The high performance monolithic microwave VCO with a coherent low frequency reference output described in this report and others based on this technology will greatly benefit advanced communications systems in both the DoD and commercial sectors. Signal processing and instrumentation systems based on phase-locking loops will also attain enhanced performance at potentially reduced cost.

  12. Advanced on-chip divider for monolithic microwave VCO's

    Science.gov (United States)

    Peterson, Weddell C.

    1989-05-01

    High frequency division on a monolithic circuit is a critical technology required to significantly enhance the performance of microwave and millimeter-wave phase-locked sources. The approach used to meet this need is to apply circuit design practices which are essentially 'microwave' in nature to the basically 'digital' problem of high speed division. Following investigation of several promising circuit approaches, program phase 1 culminated in the design and layout of an 8.5 GHz (Deep Space Channel 14) divide by four circuit based on a dynamic mixing divider circuit approach. Therefore, during program phase 2, an 8.5 GHz VCO with an integral divider which provides a phase coherent 2.125 GHz reference signal for phase locking applications was fabricated and optimized. Complete phase locked operation of the monolithic GaAs devices (VCO, power splitter, and dynamic divider) was demonstrated both individually and as an integrated unit. The fully functional integrated unit in a suitable test fixture was delivered to NASA for engineering data correlation. Based on the experience gained from this 8.5 GHz super component, a monolithic GaAs millimeter-wave dynamic divider for operation with an external VCO was also designed, fabricated, and characterized. This circuit, which was also delivered to NASA, demonstrated coherent division by four at an input frequency of 24.3 GHz. The high performance monolithic microwave VCO with a coherent low frequency reference output described in this report and others based on this technology will greatly benefit advanced communications systems in both the DoD and commercial sectors. Signal processing and instrumentation systems based on phase-locking loops will also attain enhanced performance at potentially reduced cost.

  13. An improved fractional divider for fractional-N frequency synthesizers

    Science.gov (United States)

    Zhang, Wei; Liu, Yang; Zhou, Yongqi

    2009-07-01

    This paper presents an improved fractional divider used in 1.8~2GHz fractional-N frequency synthesizers. A new clock setting for delta-sigma modulator (DSM) is proposed to prevent the potential problems of traditional fractional dividers: the DSM output would be wrongly loaded and the action of DSM circuit may affect the phase-detection of phase-frequency-detector (PFD). Simulation result shows the effectiveness of this improvement.

  14. Photodiode circuits for retinal prostheses.

    Science.gov (United States)

    Loudin, J D; Cogan, S F; Mathieson, K; Sher, A; Palanker, D V

    2011-10-01

    Photodiode circuits show promise for the development of high-resolution retinal prostheses. While several of these systems have been constructed and some even implanted in humans, existing descriptions of the complex optoelectronic interaction between light, photodiode, and the electrode/electrolyte load are limited. This study examines this interaction in depth with theoretical calculations and experimental measurements. Actively biased photoconductive and passive photovoltaic circuits are investigated, with the photovoltaic circuits consisting of one or more diodes connected in series, and the photoconductive circuits consisting of a single diode in series with a pulsed bias voltage. Circuit behavior and charge injection levels were markedly different for platinum and sputtered iridium-oxide film (SIROF) electrodes. Photovoltaic circuits were able to deliver 0.038 mC/cm(2) (0.75 nC/phase) per photodiode with 50- μm platinum electrodes, and 0.54-mC/cm(2) (11 nC/phase) per photodiode with 50-μ m SIROF electrodes driven with 0.5-ms pulses of light at 25 Hz. The same pulses applied to photoconductive circuits with the same electrodes were able to deliver charge injections as high as 0.38 and 7.6 mC/cm(2) (7.5 and 150 nC/phase), respectively. We demonstrate photovoltaic stimulation of rabbit retina in-vitro, with 0.5-ms pulses of 905-nm light using peak irradiance of 1 mW/mm(2). Based on the experimental data, we derive electrochemical and optical safety limits for pixel density and charge injection in various circuits. While photoconductive circuits offer smaller pixels, photovoltaic systems do not require an external bias voltage. Both classes of circuits show promise for the development of high-resolution optoelectronic retinal prostheses.

  15. A Low-Voltage CMOS Buffer for RF Applications Based on a Fully-Differential Voltage-Combiner

    OpenAIRE

    Abdollahvand, S.; Santos-Tavares, R.; Goes, João

    2013-01-01

    Part 20: Electronics: RF Applications; International audience; This paper presents a new CMOS buffer circuit topology for radio-frequency (RF) applications based on a fully-differential voltage-combiner circuit, capable of operating at low-voltage. The proposed circuit uses a combination of common-source (CS) and common-drain (CD) devices. The simulation results show good levels of linearity and bandwidth. To improve total harmonic distortion (THD) a source degeneration technique is used. The...

  16. Design of drive circuit of laser diode

    Science.gov (United States)

    Ran, Yingying; Huang, Xuegong; Xu, Xiaobin

    2016-10-01

    Aiming at the difficult problem of high precision frequency stabilization of semiconductor laser diode, the laser frequency control is realized through the design of the semiconductor drive system. Above all, the relationship between the emission frequency and the temperature of LD is derived theoretically. Then the temperature corresponding to the stable frequency is obtained. According to the desired temperature stability of LD, temperature control system is designed, which is composed of a temperature setting circuit, temperature gathering circuit, the temperature display circuit, analog PID control circuit and a semiconductor refrigerator control circuit module. By sampling technology, voltage of platinum resistance is acquired, and the converted temperature is display on liquid crystal display. PID analog control circuit controls speed stability and precision of temperature control. The constant current source circuit is designed to provide the reference voltage by a voltage stabilizing chip, which is buffered by an operational amplifier. It is connected with the MOSFET to drive the semiconductor laser to provide stable current for the semiconductor laser. PCB circuit board was finished and the experimental was justified. The experimental results show that: the design of the temperature control system could achieve the goal of temperature monitoring. Meanwhile, temperature can be stabilized at 40°C +/- 0.1°C. The output voltage of the constant current source is 2 V. The current is 35 mA.

  17. RF Circuit Design in Nanometer CMOS

    NARCIS (Netherlands)

    Nauta, Bram

    2007-01-01

    With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern mul

  18. RF Circuit Design in Nanometer CMOS

    NARCIS (Netherlands)

    Nauta, Bram

    2007-01-01

    With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern

  19. Mathematical modelling of fractional order circuits

    CERN Document Server

    Moreles, Miguel Angel

    2016-01-01

    In this work a classical derivation of fractional order circuits models is presented. Generalized constitutive equations in terms of fractional Riemann-Liouville derivatives are introduced in the Maxwell's equations. Next the Kirchhoff voltage law is applied in a RCL circuit configuration. A fractional differential equation model is obtained with Caputo derivatives. Thus standard initial conditions apply.

  20. Textbook Error: Short Circuiting on Electrochemical Cell

    Science.gov (United States)

    Bonicamp, Judith M.; Clark, Roy W.

    2007-01-01

    Short circuiting an electrochemical cell is an unreported but persistent error in the electrochemistry textbooks. It is suggested that diagrams depicting a cell delivering usable current to a load be postponed, the theory of open-circuit galvanic cells is explained, the voltages from the tables of standard reduction potentials is calculated and…