WorldWideScience

Sample records for voltage divider circuits

  1. Module Seven: Combination Circuits and Voltage Dividers; Basic Electricity and Electronics Individualized Learning System.

    Science.gov (United States)

    Bureau of Naval Personnel, Washington, DC.

    In this module the student will learn to apply the rules previously learned for series and parallel circuits to more complex circuits called series-parallel circuits, discover the utility of a common reference when making reference to voltage values, and learn how to obtain a required voltage from a voltage divider network. The module is divided…

  2. A simple method to increase effective PMT gain by amplifier circuit powered from voltage divider

    International Nuclear Information System (INIS)

    Popov, V.; Majewski, S.; Wojtsekhowski, B.; Guerin, D

    2001-01-01

    A novel concept is introduced of additional effective signal amplification by employing a dedicated circuit to process anode or dynode signals prior to sending them through a standard 50 /spl Omega/ line/cable. The circuit is entirely powered by the current flowing through the base voltage divider. Additional gain factors of 2-10 were easily achieved with preserved operation speed and rate capability up to several MHz. This additional signal boost can be used in many applications where higher gain and/or lower PMT operational voltages are desirable. For example, in the case of a PMT employed in a low input light signal (such as a Cherenkov counter), this technique will permit operation at a lower voltage and, therefore, will result in better operational PMT stability and longer PMT lifetime. At present, two experimental set-ups at Jefferson Lab are using PMT bases using this concept

  3. Voltage regulating circuit

    NARCIS (Netherlands)

    2005-01-01

    A voltage regulating circuit comprising a rectifier (2) for receiving an AC voltage (Vmains) and for generating a rectified AC voltage (vrec), and a capacitor (3) connected in parallel with said rectified AC voltage for providing a DC voltage (VDC) over a load (5), characterized by a unidirectional

  4. Fast frequency divider circuit using combinational logic

    Science.gov (United States)

    Helinski, Ryan

    2017-05-30

    The various technologies presented herein relate to performing on-chip frequency division of an operating frequency of a ring oscillator (RO). Per the various embodiments herein, a conflict between RO size versus operational frequency can be addressed by dividing the output frequency of the RO to a frequency that can be measured on-chip. A frequency divider circuit (comprising NOR gates and latches, for example) can be utilized in conjunction with the RO on the chip. In an embodiment, the frequency divider circuit can include a pair of latches coupled to the RO to facilitate dividing the oscillating frequency of the RO by 2. In another embodiment, the frequency divider circuit can include four latches (operating in pairs) coupled to the RO to facilitate dividing the oscillating frequency of the RO by 4. A plurality of ROs can be MUXed to the plurality of ROs by a single oscillation-counting circuit.

  5. High voltage MOSFET switching circuit

    Science.gov (United States)

    McEwan, Thomas E.

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  6. Design of shielded voltage divider for impulse voltage measurement

    International Nuclear Information System (INIS)

    Kato, Shohei; Kouno, Teruya; Maruyama, Yoshio; Kikuchi, Koji.

    1976-01-01

    The dividers used for the study of the insulation and electric discharge phenomena in high voltage equipments have the problems of the change of response characteristics owing to adjacent bodies and of induced noise. To improve the characteristics, the enclosed type divider shielded with metal has been investigated, and the divider of excellent response has been obtained by adopting the frequency-separating divider system, which is divided into two parts, resistance divider (lower frequency region) and capacitance divider (higher frequency region), for avoiding to degrade the response. Theoretical analysis was carried out in the cases that residual inductance can be neglected or can not be neglected in the small capacitance divider, and that the connecting wires are added. Next, the structure of the divider and the design of the electric field for the divider manufactured on the basis of the theory are described. The response characteristics were measured. The results show that 1 MV impulse voltage can be measured within the response time of 10 ns. Though this divider aims at the impulse voltage, the duration time of which is about that of standard lightning impulse, in view of the heat capacity because of the input resistance of 10.5 kΩ, it is expected that the divider can be applied to the voltage of longer duration time by increasing the input resistance in future. (Wakatsuki, Y.)

  7. Voltage linear transformation circuit design

    Science.gov (United States)

    Sanchez, Lucas R. W.; Jin, Moon-Seob; Scott, R. Phillip; Luder, Ryan J.; Hart, Michael

    2017-09-01

    Many engineering projects require automated control of analog voltages over a specified range. We have developed a computer interface comprising custom hardware and MATLAB code to provide real-time control of a Thorlabs adaptive optics (AO) kit. The hardware interface includes an op amp cascade to linearly shift and scale a voltage range. With easy modifications, any linear transformation can be accommodated. In AO applications, the design is suitable to drive a range of different types of deformable and fast steering mirrors (FSM's). Our original motivation and application was to control an Optics in Motion (OIM) FSM which requires the customer to devise a unique interface to supply voltages to the mirror controller to set the mirror's angular deflection. The FSM is in an optical servo loop with a wave front sensor (WFS), which controls the dynamic behavior of the mirror's deflection. The code acquires wavefront data from the WFS and fits a plane, which is subsequently converted into its corresponding angular deflection. The FSM provides +/-3° optical angular deflection for a +/-10 V voltage swing. Voltages are applied to the mirror via a National Instruments digital-to-analog converter (DAC) followed by an op amp cascade circuit. This system has been integrated into our Thorlabs AO testbed which currently runs at 11 Hz, but with planned software upgrades, the system update rate is expected to improve to 500 Hz. To show that the FSM subsystem is ready for this speed, we conducted two different PID tuning runs at different step commands. Once 500 Hz is achieved, we plan to make the code and method for our interface solution freely available to the community.

  8. Sequential circuit design for radiation hardened multiple voltage integrated circuits

    Science.gov (United States)

    Clark, Lawrence T [Phoenix, AZ; McIver, III, John K.

    2009-11-24

    The present invention includes a radiation hardened sequential circuit, such as a bistable circuit, flip-flop or other suitable design that presents substantial immunity to ionizing radiation while simultaneously maintaining a low operating voltage. In one embodiment, the circuit includes a plurality of logic elements that operate on relatively low voltage, and a master and slave latches each having storage elements that operate on a relatively high voltage.

  9. Two types of photomultiplier voltage dividers for high and changing count rates

    International Nuclear Information System (INIS)

    Reiter, W.L.; Stengl, G.

    1980-01-01

    We report on the design of two types of voltage distribution circuits for high stability photomultiplier operation. 'Type A' voltage divider is an ohmic voltage divider with high bleeder current (up to 10 mA) and the resistor chain split at one of the last dynodes, usually the dynode where the analog signal is derived from. This simple constructive measure improves the stability of the dynode voltage by a factor of 5 compared with an unsplit conventional resistor chain. 'Type B' is a novel active voltage divider using cold cathode tubes ar regulating elements. This voltage divider exhibits excellent temperature stability (about 10 -4 / 0 C). With 'type B' an equal stability compared with conventional ohmic dividers can be achieved at a bleeder current smaller by one order of magnitude. Of course both concepts, 'type A' and 'type B', can be combined. (orig.)

  10. MOS voltage automatic tuning circuit

    OpenAIRE

    李, 田茂; 中田, 辰則; 松本, 寛樹

    2004-01-01

    Abstract ###Automatic tuning circuit adjusts frequency performance to compensate for the process variation. Phase locked ###loop (PLL) is a suitable oscillator for the integrated circuit. It is a feedback system that compares the input ###phase with the output phase. It can make the output frequency equal to the input frequency. In this paper, PLL ###fomed of MOSFET's is presented.The presented circuit consists of XOR circuit, Low-pass filter and Relaxation ###Oscillator. On PSPICE simulation...

  11. Low-Voltage Switched-Capacitor Circuits

    DEFF Research Database (Denmark)

    Bidari, E.; Keskin, M.; Maloberti, F.

    1999-01-01

    Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications.......Switched-capacitor stages are described which can function with very low (typically 1 V) supply voltages, without using voltage boosting or switched op-amps. Simulations indicate that high performance may be achieved using these circuits in filter or data converter applications....

  12. A pulse amplitude dividing circuit for nuclear applications

    International Nuclear Information System (INIS)

    Ediss, C.; McQuarrie, S.A.

    1981-01-01

    A pulse dividing circuit has been developed to provide analogue and digital outputs proportional to the ratio of the amplitudes of two nuclear pulses. Input pulses ranging from 200 mV to 10 V may be processed by the device. The pulse dividing circuit has been successfully incorporated as part of a small gamma camera. (orig.)

  13. Coplanar strips for Josephson voltage standard circuits

    International Nuclear Information System (INIS)

    Schubert, M.; May, T.; Wende, G.; Fritzsch, L.; Meyer, H.-G.

    2001-01-01

    We present a microwave circuit for Josephson voltage standards. Here, the Josephson junctions are integrated in a microwave transmission line designed as coplanar strips (CPS). The new layout offers the possibility of achieving a higher scale of integration and to considerably simplify the fabrication technology. The characteristic impedance of the CPS is about 50 Ω, and this should be of interest for programmable Josephson voltage standard circuits with SNS or SINIS junctions. To demonstrate the function of the microwave circuit design, conventional 10 V Josephson voltage standard circuits with 17000 Nb/AlO x /Nb junctions were prepared and tested. Stable Shapiro steps at the 10 V level were generated. Furthermore, arrays of 1400 SINIS junctions in this microwave layout exhibited first-order Shapiro steps. Copyright 2001 American Institute of Physics

  14. Microwave integrated circuit for Josephson voltage standards

    Science.gov (United States)

    Holdeman, L. B.; Toots, J.; Chang, C. C. (Inventor)

    1980-01-01

    A microwave integrated circuit comprised of one or more Josephson junctions and short sections of microstrip or stripline transmission line is fabricated from thin layers of superconducting metal on a dielectric substrate. The short sections of transmission are combined to form the elements of the circuit and particularly, two microwave resonators. The Josephson junctions are located between the resonators and the impedance of the Josephson junctions forms part of the circuitry that couples the two resonators. The microwave integrated circuit has an application in Josephson voltage standards. In this application, the device is asymmetrically driven at a selected frequency (approximately equal to the resonance frequency of the resonators), and a d.c. bias is applied to the junction. By observing the current voltage characteristic of the junction, a precise voltage, proportional to the frequency of the microwave drive signal, is obtained.

  15. The Apply of Frequency Divider Circuit in Nuclear Electronics

    International Nuclear Information System (INIS)

    LIU Hefan; Zeng Bing; Zhang Ziliang; Ge Liangquan

    2009-01-01

    Different components in a digital system often need different working frequencies, the way we often used is clock division from the system clock. Through the analysis of frequency divider principle, a applied integer frequency dividing circuit with SE120A is proposed. It can divide the frequency multiple from 2 to 64. It's usually used in nuclear electronics. It's testing and analysis is displayed that it has no noise, good frequency division effect and stability. (authors)

  16. High voltage generator circuit with low power and high efficiency applied in EEPROM

    International Nuclear Information System (INIS)

    Liu Yan; Zhang Shilin; Zhao Yiqiang

    2012-01-01

    This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory (EEPROM). The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique. The high efficiency is dependent on the zero threshold voltage (V th ) MOSFET and the charge transfer switch (CTS) charge pump. The proposed high voltage generator circuit has been implemented in a 0.35 μm EEPROM CMOS process. Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48 μW and a higher pumping efficiency (83.3%) than previously reported circuits. This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation. (semiconductor integrated circuits)

  17. Investigation about decoupling capacitors of PMT voltage divider effects on neutron-gamma discrimination

    International Nuclear Information System (INIS)

    Divani, Nazila; Firoozabadi, Mohammad M.; Bayat, Esmail

    2014-01-01

    Scintillators are almost used in any nuclear laboratory. These detectors combine of scintillation materials, PMT and a voltage divider. Voltage dividers are different in resistive ladder design. But the effect of decoupling capacitors and damping resistors haven’t discussed yet. In this paper at first a good equilibrium circuit designed for PMT, and it was used for investigating about capacitors and resistors in much manner. Results show that decoupling capacitors have great effect on PMT output pulses. In this research, it was tried to investigate the effect of Capacitor’s value and places on PMT voltage divider in Neutron-Gamma discrimination capability. Therefore, the voltage divider circuit for R329-02 Hamamatsu PMT was made and Zero Cross method used for neutron-gamma discrimination. The neutron source was a 20Ci Am-Be. Anode and Dynode pulses and discrimination spectrum were saved. The results showed that the pulse height and discrimination quality change with the value and setting of capacitors

  18. High voltage short plus generation based on avalanche circuit

    International Nuclear Information System (INIS)

    Hu Yuanfeng; Yu Xiaoqi

    2006-01-01

    Simulate the avalanche circuit in series with PSPICE module, design the high voltage short plus generation circuit by avalanche transistor in series for the sweep deflection circuit of streak camera. The output voltage ranges 1.2 KV into 50 ohm load. The rise time of the circuit is less than 3 ns. (authors)

  19. Low-voltage circuit breaker arcs—simulation and measurements

    International Nuclear Information System (INIS)

    Yang, Fei; Wu, Yi; Rong, Mingzhe; Sun, Hao; Ren, Zhigang; Niu, Chunping; Murphy, Anthony B

    2013-01-01

    As one of the most important electrical components, the low-voltage circuit breaker (LVCB) has been widely used for protection in all types of low-voltage distribution systems. In particular, the low-voltage dc circuit breaker has been arousing great research interest in recent years. In this type of circuit breaker, an air arc is formed in the interrupting process which is a 3D transient arc in a complex chamber geometry with splitter plates. Controlling the arc evolution and the extinction are the most significant problems. This paper reviews published research works referring to LVCB arcs. Based on the working principle, the arcing process is divided into arc commutation, arc motion and arc splitting; we focus our attention on the modelling and measurement of these phases. In addition, previous approaches in papers of the critical physical phenomenon treatment are discussed, such as radiation, metal erosion, wall ablation and turbulence in the air arc. Recommendations for air arc modelling and measurement are presented for further investigation. (topical review)

  20. Circuit and method for controlling the threshold voltage of transistors.

    NARCIS (Netherlands)

    2008-01-01

    A control unit, for controlling a threshold voltage of a circuit unit having transistor devices, includes a reference circuit and a measuring unit. The measuring unit is configured to measure a threshold voltage of at least one sensing transistor of the circuit unit, and to measure a threshold

  1. A low-ripple chargepump circuit for high voltage applications

    NARCIS (Netherlands)

    Berkhout, M.; Berkhout, M.; van Steenwijk, G.; van Steenwijk, Gijs; van Tuijl, Adrianus Johannes Maria

    1995-01-01

    The subject of this paper is a fully integrated chargepump circuit with a very low output voltage ripple. At a supply voltage of 30V the chargepump can source 1mA at an output voltage of 40V. Two simple modifications to the classical chargepump circuit give a substantial reduction of the output

  2. Integrated differential high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Farch, Kjartan

    2015-01-01

    In this paper an integrated differential high-voltage transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is designed and implemented in a 0.35 μm high-voltage process. Measurements are performed on the integrated circuit in order...... to assess its performance. The circuit generates pulses at differential voltage levels of 60V, 80V and 100 V, a frequency up to 5MHz and a measured driving strength of 1.75 V/ns with the CMUT connected. The total on-chip area occupied by the transmitting circuit is 0.18 mm2 and the power consumption...

  3. Switching phenomena in high-voltage circuit breakers

    International Nuclear Information System (INIS)

    Nakanishi, K.

    1991-01-01

    The topics covered in this book include: general problems concerning current interruption, the physical arc model, and miscellaneous types of modern switching apparatus, such as gas circuit breakers, gas-insulated switch-gear, vacuum circuit breakers and high-voltage direct-current circuit breakers

  4. Integrated Reconfigurable High-Voltage Transmitting Circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2014-01-01

    -out and measurements are performed on the integrated circuit. The transmitting circuit is reconfigurable externally making it able to drive a wide variety of CMUTs. The transmitting circuit can generate several pulse shapes, pulse voltages up to 100 V, maximum pulse range of 50 V and frequencies up to 5 MHz. The area...

  5. A High-Voltage Level Tolerant Transistor Circuit

    NARCIS (Netherlands)

    Annema, Anne J.; Geelen, Godefridus Johannes Gertrudis Maria

    2001-01-01

    A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1)

  6. Precision High-Voltage DC Dividers and Their Calibration

    Czech Academy of Sciences Publication Activity Database

    Dragounová, Naděžda

    2005-01-01

    Roč. 54, č. 5 (2005), s. 1911-1915 ISSN 0018-9456 R&D Projects: GA AV ČR KSK1048102; GA ČR GA202/03/0889 Keywords : calibration * dc voltage * high voltage (HV) Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.665, year: 2005

  7. A Voltage Doubler Circuit to Extend the Soft-switching Range of Dual Active Bridge Converters

    DEFF Research Database (Denmark)

    Qin, Zian; Shen, Yanfeng; Wang, Huai

    2017-01-01

    A voltage doubler circuit is realized to extend the soft-switching range of Dual Active Bridge (DAB) converters. No extra hardware is added to the DAB to form this circuit, since it is composed of the dc blocking capacitor and the low side full bridge converter, which already exist in DAB....... With the voltage doubler, the DAB converter can achieve soft switching and high efficiency when the low side dc voltage is close to 2 pu (1 pu is the high side dc voltage divided by the transformer turn ratio), which can be realized only when the low side dc voltage is close to 1 pu by using the conventional phase...... shift modulation in DAB. Thus the soft switching range is extended. The soft switching boundary conditions are derived. A map to show the soft switching or hard switching in the full load and voltage range is obtained. The feasibility and effectiveness of the proposed method is finally verified...

  8. Integrated reconfigurable high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2015-01-01

    In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... to drive a wide variety of CMUTs. The transmitting circuit can generate several pulse shapes with voltages up to 100 V, maximum pulse range of 50 V, frequencies up to 5 MHz and different driving slew rates. Measurements are performed on the circuit in order to assess its functionality and power consumption...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

  9. The Design and Characterization of a Prototype Wideband Voltage Sensor Based on a Resistive Divider.

    Science.gov (United States)

    Garnacho, Fernando; Khamlichi, Abderrahim; Rovira, Jorge

    2017-11-17

    The most important advantage of voltage dividers over traditional voltage transformers is that voltage dividers do not have an iron core with non-linear hysteresis characteristics. The voltage dividers have a linear behavior with respect to over-voltages and a flat frequency response larger frequency range. The weak point of a voltage divider is the influence of external high-voltage (HV) and earth parts in its vicinity. Electrical fields arising from high voltages in neighboring phases and from ground conductors and structures are one of their main sources for systematic measurement errors. This paper describes a shielding voltage divider for a 24 kV medium voltage network insulated in SF6 composed of two resistive-capacitive dividers, one integrated within the other, achieving a flat frequency response up to 10 kHz for ratio error and up to 5 kHz for phase displacement error. The metal shielding improves its immunity against electric and magnetic fields. The characterization performed on the built-in voltage sensor shows an accuracy class of 0.2 for a frequency range from 20 Hz to 5 kHz and a class of 0.5 for 1 Hz up to 20 Hz. A low temperature effect is also achieved for operation conditions of MV power grids.

  10. Optimal planning of series resistor to control time constant of test circuit for high-voltage AC circuit-breakers

    OpenAIRE

    Yoon-Ho Kim; Jung-Hyeon Ryu; Jin-Hwan Kim; Kern-Joong Kim

    2016-01-01

    The equivalent test circuit that can deliver both short-circuit current and recovery voltage is used to verify the performance of high-voltage circuit breakers. Most of the parameters in this circuit can be obtained by using a simple calculation or a simulation program. The ratings of the circuit breaker include rated short-circuit breaking current, rated short-circuit making current, rated operating sequence of the circuit breaker and rated short-time current. Among these ratings, the short-...

  11. Capacitive divider for output voltage measurement of intense electron beam accelerator

    International Nuclear Information System (INIS)

    Ding Desheng; Yi Lingzhi; Yu Binxiong; Hong Zhiqiang; Liu Jinliang

    2012-01-01

    A kind of simple-mechanism, easy-disassembly self-integrating capacitive divider used for measuring diode output voltage of intense electron beam accelerator (IEBA) is developed. The structure of the capacitive divider is described, and the capacitance value of the capacitive divider is calculated by theoretical analysis and electromagnetic simulation. The dependence of measurement voltage on electrical parameters such as stray capacitance, earth capacitance of front resistance is obtained by PSpice simulation. Measured waveforms appear overshoot phenomenon when stray capacitance of front resistance is larger, and the wavefront will be affected when earth capacitance of front resistance is larger. The diode output voltage waveforms of intense electron beam accelerator, are measured by capacitive divider and calibrated by water resistance divider, which is accordance with that measured by a resistive divider, the division ratio is about 563007. The designed capacitive divider can be used to measure high-voltage pulse with 100 ns full width at half maximum. (authors)

  12. High-Voltage MOSFET Switching Circuit

    Science.gov (United States)

    Jensen, Kenneth A.

    1995-01-01

    Circuit reliably switches power at supply potential of minus 1,500 V, with controlled frequency and duty cycle. Used in argon-plasma ion-bombardment equipment for texturing copper electrodes, as described in "Texturing Copper To Reduce Secondary Emission of Electrons" (LEW-15898), also adapted to use in powering gaseous flash lamps and stroboscopes.

  13. Thermally-induced voltage alteration for integrated circuit analysis

    Energy Technology Data Exchange (ETDEWEB)

    Cole, E.I. Jr.

    2000-06-20

    A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

  14. A novel water resistor divider with a coaxial low-voltage arm.

    Science.gov (United States)

    Jia, Wei; Chen, Weiqing; Mao, Congguang; Zeng, Jiangtao

    2010-03-01

    A new style high voltage resistor divider made of saline solution has been constructed and tested. A coaxial construction is used on the low-voltage arm, as the signal extraction electrode, which can increase the attenuation ratio of the divider. The time response of divider limited by the stray parameter also can be improved. Comparing the results of calibrated experiment with the commonly used equal size copper sulfate dividers, the new probe has nearly five times increase in the attenuation ratio. The time response of the new style divider in the dimension of 30 mm in diameter and 400 mm in length can reach to 1 ns.

  15. A Hybrid, Current-Source/Voltage-Source Power Inverter Circuit

    DEFF Research Database (Denmark)

    Trzynadlowski, Andrzej M.; Patriciu, Niculina; Blaabjerg, Frede

    2001-01-01

    A combination of a large current-source inverter and a small voltage-source inverter circuits is analyzed. The resultant hybrid inverter inherits certain operating advantages from both the constituent converters. In comparison with the popular voltage-source inverter, these advantages include...... reduced switching losses, improved quality of output current waveforms, and faster dynamic response to current control commands. Description of operating principles and characteristics of the hybrid inverter is illustrated with results of experimental investigation of a laboratory model....

  16. The high voltage divider - a tool for comparison of measurement equipment in diagnostic radiology

    International Nuclear Information System (INIS)

    Slavchev, A.; Litchev, A.; Constantinov, B.

    2004-01-01

    The high voltage divider (HVD) is designed for control and analysis of the characteristics of the X-ray generator. The low voltage analogous signals produced by the divider are proportional to the high voltage (kVp) applied to the x-ray tube by a ratio 1:1000 or 1:10000 and can be measured with external test devices like storage oscilloscope (or digital multimeter). The exposure duration and the wave form may be visualized, too. Apart of this invasive way the high voltage also may be measured non-invasively by means of appropriate devices as well as indirectly through calculations. Since the invasive method of measurement with the high voltage divider is distinguished by a high accuracy, it may be utilized as an effective tool for calibration of different devices and for comparison of the measurement methods. (authors)

  17. 30 CFR 77.902-1 - Fail safe ground check circuits; maximum voltage.

    Science.gov (United States)

    2010-07-01

    ... voltage. 77.902-1 Section 77.902-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902-1 Fail safe ground check circuits; maximum voltage. The maximum voltage used for ground check circuits under § 77.902...

  18. 30 CFR 75.907 - Design of trailing cables for medium-voltage circuits.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Design of trailing cables for medium-voltage... Medium-Voltage Alternating Current Circuits § 75.907 Design of trailing cables for medium-voltage circuits. [Statutory Provisions] Trailing cables for medium-voltage circuits shall include grounding...

  19. A high open-circuit voltage gallium nitride betavoltaic microbattery

    International Nuclear Information System (INIS)

    Cheng, Zaijun; Chen, Xuyuan; San, Haisheng; Feng, Zhihong; Liu, Bo

    2012-01-01

    A high open-circuit voltage betavoltaic microbattery based on a gallium nitride (GaN) p–i–n homojunction is demonstrated. As a beta-absorbing layer, the low electron concentration of the n-type GaN layer is achieved by the process of Fe compensation doping. Under the irradiation of a planar solid 63 Ni source with activity of 0.5 mCi, the open-circuit voltage of the fabricated microbattery with 2 × 2 mm 2 area reaches as much as 1.64 V, which is the record value reported for betavoltaic batteries with 63 Ni source, the short-circuit current was measured as 568 pA and the conversion effective of 0.98% was obtained. The experimental results suggest that GaN is a high-potential candidate for developing the betavoltaic microbattery. (paper)

  20. Calibration of the ISOLDE acceleration voltage using a high-precision voltage divider and applying collinear fast beam laser spectroscopy

    CERN Document Server

    Krieger, A.; Catherall, R.; Hochschulz, F.; Kramer, J.; Neugart, R.; Rosendahl, S.; Schipper, J.; Siesling, E.; Weinheimer, Ch.; Yordanov, D.T.; Nortershauser, W.

    2011-01-01

    A high-voltage divider with accuracy at the ppm level and collinear laser spectroscopy were used to calibrate the highvoltage installation at the radioactive ion beam facility ISOLDE at CERN. The accurate knowledge of this voltage is particularly important for collinear laser spectroscopy measurements. Beam velocity measurements using frequencycomb based collinear laser spectroscopy agree with the new calibration. Applying this, one obtains consistent results for isotope shifts of stable magnesium isotopes measured using collinear spectroscopy and laser spectroscopy on laser-cooled ions in a trap. The long-term stability and the transient behavior during recovery from a voltage dropout were investigated for the different power supplies currently applied at ISOLDE.

  1. A voltage biased superconducting quantum interference device bootstrap circuit

    International Nuclear Information System (INIS)

    Xie Xiaoming; Wang Huiwu; Wang Yongliang; Dong Hui; Jiang Mianheng; Zhang Yi; Krause, Hans-Joachim; Braginski, Alex I; Offenhaeusser, Andreas; Mueck, Michael

    2010-01-01

    We present a dc superconducting quantum interference device (SQUID) readout circuit operating in the voltage bias mode and called a SQUID bootstrap circuit (SBC). The SBC is an alternative implementation of two existing methods for suppression of room-temperature amplifier noise: additional voltage feedback and current feedback. Two circuit branches are connected in parallel. In the dc SQUID branch, an inductively coupled coil connected in series provides the bias current feedback for enhancing the flux-to-current coefficient. The circuit branch parallel to the dc SQUID branch contains an inductively coupled voltage feedback coil with a shunt resistor in series for suppressing the preamplifier noise current by increasing the dynamic resistance. We show that the SBC effectively reduces the preamplifier noise to below the SQUID intrinsic noise. For a helium-cooled planar SQUID magnetometer with a SQUID inductance of 350 pH, a flux noise of about 3 μΦ 0 Hz -1/2 and a magnetic field resolution of less than 3 fT Hz -1/2 were obtained. The SBC leads to a convenient direct readout electronics for a dc SQUID with a wider adjustment tolerance than other feedback schemes.

  2. Voltage imaging to understand connections and functions of neuronal circuits

    Science.gov (United States)

    Antic, Srdjan D.; Empson, Ruth M.

    2016-01-01

    Understanding of the cellular mechanisms underlying brain functions such as cognition and emotions requires monitoring of membrane voltage at the cellular, circuit, and system levels. Seminal voltage-sensitive dye and calcium-sensitive dye imaging studies have demonstrated parallel detection of electrical activity across populations of interconnected neurons in a variety of preparations. A game-changing advance made in recent years has been the conceptualization and development of optogenetic tools, including genetically encoded indicators of voltage (GEVIs) or calcium (GECIs) and genetically encoded light-gated ion channels (actuators, e.g., channelrhodopsin2). Compared with low-molecular-weight calcium and voltage indicators (dyes), the optogenetic imaging approaches are 1) cell type specific, 2) less invasive, 3) able to relate activity and anatomy, and 4) facilitate long-term recordings of individual cells' activities over weeks, thereby allowing direct monitoring of the emergence of learned behaviors and underlying circuit mechanisms. We highlight the potential of novel approaches based on GEVIs and compare those to calcium imaging approaches. We also discuss how novel approaches based on GEVIs (and GECIs) coupled with genetically encoded actuators will promote progress in our knowledge of brain circuits and systems. PMID:27075539

  3. High-voltage direct-current circuit breakers

    International Nuclear Information System (INIS)

    Yoshioka, Y.; Hirasawa, K.

    1991-01-01

    This paper reports that in 1954 the first high-voltage direct-current (HVDC) transmission system was put into operation between Gotland and the mainland of Sweden. Its system voltage and capacity were 100 kV and 20 MW, respectively. Since then many HVDC transmission systems have been planned, constructed, or commissioned in more than 30 places worldwide, and their total capacity is close to 40 GW. Most systems commissioned to date are two-terminal schemes, and HVDC breakers are not yet used in the high-potential main circuit of those systems, because the system is expected to perform well using only converter/inverter control even at a fault stage of the transmission line. However, even in a two-terminal scheme there are not a few merits in using an HVDC breaker when the system has two parallel transmission lines, that is, when it is a double-circuit system

  4. Calibration of the ISOLDE acceleration voltage using a high-precision voltage divider and applying collinear fast beam laser spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Krieger, A., E-mail: kriegea@uni-mainz.d [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); Geppert, Ch. [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, 64291 Darmstadt (Germany); Catherall, R. [CERN, CH-1211 Geneve 23 (Switzerland); Hochschulz, F. [Institut fuer Kernphysik, Universitaet Muenster, 48149 Muenster (Germany); Kraemer, J.; Neugart, R. [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); Rosendahl, S. [Institut fuer Kernphysik, Universitaet Muenster, 48149 Muenster (Germany); Schipper, J.; Siesling, E. [CERN, CH-1211 Geneve 23 (Switzerland); Weinheimer, Ch. [Institut fuer Kernphysik, Universitaet Muenster, 48149 Muenster (Germany); Yordanov, D.T. [Max-Planck-Institut fuer Kernphysik, 69117 Heidelberg (Germany); Noertershaeuser, W. [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, 64291 Darmstadt (Germany)

    2011-03-11

    A high-voltage divider with accuracy at the ppm level and collinear laser spectroscopy were used to calibrate the high-voltage installation at the radioactive ion beam facility ISOLDE at CERN. The accurate knowledge of this voltage is particularly important for collinear laser spectroscopy measurements. Beam velocity measurements using frequency-comb based collinear laser spectroscopy agree with the new calibration. Applying this, one obtains consistent results for isotope shifts of stable magnesium isotopes measured using collinear spectroscopy and laser spectroscopy on laser-cooled ions in a trap. The long-term stability and the transient behavior during recovery from a voltage dropout were investigated for the different power supplies currently applied at ISOLDE.

  5. 30 CFR 75.802 - Protection of high-voltage circuits extending underground.

    Science.gov (United States)

    2010-07-01

    ...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of high-voltage circuits extending... which shall be grounded through a suitable resistor at the source transformers, and a grounding circuit...

  6. 30 CFR 75.902 - Low- and medium-voltage ground check monitor circuits.

    Science.gov (United States)

    2010-07-01

    ... Medium-Voltage Alternating Current Circuits § 75.902 Low- and medium-voltage ground check monitor circuits. [Statutory Provisions] On or before September 30, 1970, low- and medium-voltage resistance... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage ground check monitor...

  7. 30 CFR 77.803-1 - Fail safe ground check circuits; maximum voltage.

    Science.gov (United States)

    2010-07-01

    ... voltage. 77.803-1 Section 77.803-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.803-1 Fail safe ground check circuits; maximum voltage. The maximum voltage used for ground check circuits under § 77.803 shall not...

  8. Inductive energy storage using high voltage vacuum circuit breakers

    International Nuclear Information System (INIS)

    McCann, R.B.; Woodson, H.H.; Mukutmoni, T.

    1976-01-01

    Controlled thermonuclear fusion experiments currently being planned require large amounts of pulsed energy. Inductive energy storage systems (IES) appear to be attractive for at least two applications in the fusion research program: high beta devices and those employing turbulent heating. The well-known roadblock to successful implementation of IES is the development of a reliable and cost-effective off-switch capable of handling high currents and withstanding high recovery voltages. The University of Texas at Austin has a program to explore the application of conventional vacuum circuit breakers designed for use in AC systems, in conjunction with appropriate counter pulse circuits, as off-switches in inductive energy storage systems. The present paper describes the IES employing vacuum circuit breakers as off-switches. Since the deionization property of these circuit breakers is of great importance to the design and the cost of the counter-pulse circuit, a synthetic test installation to test these breakers has been conceived, designed and is being installed in the Fusion Research Center, University of Texas at Austin. Some design aspects of the facility will be discussed here. Finally, the results of the study on a mathematical model developed and optimized to determine the least cost system which meets both the requirements of an off-switch for IES Systems and the ratings of circuit breakers used in power systems has been discussed. This analysis indicates that the most important factor with respect to the system cost is the derating of the circuit breakers to obtain satisfactory lifetimes

  9. Fabrication and voltage divider operation of a T flip-flop using high-Tc interface-engineered Josephson junctions

    International Nuclear Information System (INIS)

    Kim, JunHo; Kim, Sang Hyeob; Sung, Gun Yong

    2002-01-01

    We designed and fabricated a rapid-single-flux-quantum T flip-flop (TFF) with high-T c interface-engineered Josephson junctions. Y 1 Ba 2 Cu 3 O 7-d and Sr 2 AlTaO 6 were deposited for the superconducting layer and the insulating layer, respectively. The Josephson junction was formed through an interface treatment process using Ar ion milling and vacuum annealing. We simulated a TFF circuit and designed a physical layout using WRspice and Xic. The fabricated TFF has a minimum junction width of 3 μ m. Through the measurement of the voltage divider operation, the maximum operation frequency was estimated to be 53 GHz at 22 K and 106 GHz at 12 K. (author)

  10. Calibration of the precision high voltage dividers of the KATRIN experiment

    Energy Technology Data Exchange (ETDEWEB)

    Rest, Oliver [Institut fuer Kernphysik, Westfaelische Wilhelms-Universitaet Muenster (Germany); Collaboration: KATRIN-Collaboration

    2016-07-01

    The KATRIN (KArlsruhe TRItium Neutrino) experiment will measure the endpoint region of the tritium β decay spectrum to determine the neutrino mass with a sensitivity of 200 meV/c{sup 2}. To achieve this sub-eV sensitivity the energy of the decay electrons will be analyzed using a MAC-E type spectrometer. The retarding potential of the MAC-E-filter (up to -35 kV) has to be monitored with a relative precision of 3 . 10{sup -6}. For this purpose the potential will be measured directly via two custom made precision high voltage dividers, which were developed and constructed in cooperation with the Physikalisch-Technische Bundesanstalt Braunschweig. In order to determine the absolute values and the stability of the scale factors of the voltage dividers, regular calibration measurements are essential. Such measurements have been performed during the last years using several different methods. The poster gives an overview of the methods and results of the calibration of the precision high voltage dividers.

  11. High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip

    Science.gov (United States)

    Issadore, David; Franke, Thomas; Brown, Keith A.; Hunt, Thomas P.; Westervelt, Robert M.

    2010-01-01

    A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm2 in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip’s surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. PMID:20625468

  12. A novel high voltage start up circuit for an integrated switched mode power supply

    Energy Technology Data Exchange (ETDEWEB)

    Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

  13. 30 CFR 77.802 - Protection of high-voltage circuits; neutral grounding resistors; disconnecting devices.

    Science.gov (United States)

    2010-07-01

    ... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.802 Protection... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of high-voltage circuits; neutral... grounded through a suitable resistor at the source transformers, and a grounding circuit, originating at...

  14. A novel sourceline voltage compensation circuit for embedded NOR flash memory

    International Nuclear Information System (INIS)

    Zhang Shengbo; Yang Guangjun; Hu Jian; Xiao Jun

    2014-01-01

    A novel sourceline voltage compensation circuit for program operation in embedded flash memory is presented. With the sourceline voltage compensation circuit, the charge pump can modulate the output voltage according to the number of cells to be programmed with data “0”. So the IR drop on the sourceline decoding path is compensated, and a stable sourceline voltage can be obtained. In order to reduce the power dissipation in program operation, a bit-inversion program circuit is adopted. By using the bit-inversion program circuit, the cells programmed to data “0” are limited to half of the bits of a write data word, thus power dissipation in program operation is greatly reduced. A 1.8-V 8 × 64-kbits embedded NOR flash memory employing the two circuits has been integrated using a GSMC 0.18-μm 4-poly 4-metal CMOS process. (semiconductor integrated circuits)

  15. Life testing of a low voltage air circuit breaker

    International Nuclear Information System (INIS)

    Subudhi, M.

    1991-01-01

    ADS-416 low voltage air circuit breaker manufacture by Westinghouse was mechanically cycled to identify age-related degradation in various breaker subcomponents, in particular, the power-operating mechanism. This accelerated aging test was performed on one breaker unit for over 36,000 cycles. Three separate pole shafts, one with a 60 degree weld, one with a 120 degree weld and one with a 180 degree weld in the third pole lever were used to characterize the cracking in these welds. In addition, during the testing, three different operating mechanisms and several other parts were replaced as they degraded to an inoperable condition. Of the seven welds on the pole shaft, two were found to be the critical ones whose fracture can result in misalignment problems of the pole levers. These failures, in turn can lead to many other problems with the operating mechanism including the burn-out of coils, excessive wear in certain parts and over-stressed linkages. Furthermore, the limiting service life of a number of subcomponents of the power-operated mechanism, including the operating mechanism itself, were assessed. 1 ref., 3 figs

  16. Life testing of a low voltage air circuit breaker

    International Nuclear Information System (INIS)

    Subudhi, M.; Aggarwal, S.

    1992-01-01

    A DS-416 low voltage air circuit breaker manufactured by Westinghouse was mechanically cycled to identify age-related degradation in the various breaker subcomponents, specifically the power-operated mechanism. This accelerated aging test was performed on one breaker unit for over 36,000 cycles. Three separate pole shafts, one with a 60-degree weld, one with a 120-degree weld, and one with a 180-degree weld in the third pole lever were used to characterize cracking in the welds. In addition, during the testing three different operating mechanisms and several other parts were replaced as they became inoperable. Among the seven welds on the pole shaft, number-sign 1 and number-sign 3 were found to be critical ones whose fracture can result in misalignment of the pole levers. This can lead to problems with the operating mechanism, including the burning of coils, excessive wear in certain parts, and overstressed linkages. Furthermore, the limiting service life of a number of subcomponents of the power-operated mechanism, including the operating mechanism itself, were assessed. Based on these findings, suggestions are provided to alleviate the age-related degradation that could occur as a result of normal closing and opening of the breaker contacts during its service life. Also, cause and effect analyses of various age-related degradation in various breaker parts are discussed

  17. Distance protection of multiple-circuit shared tower transmission lines with different voltages

    DEFF Research Database (Denmark)

    Silva, Filipe Miguel Faria da; Bak, Claus Leth

    2017-01-01

    Multiple-circuit transmission lines combining different voltage levels in one tower present extra challenges when setting a protection philosophy, as faults between voltage levels are possible. This study presents a detailed theoretical analysis of such combined faults, including the development...... of a formula for estimating the magnitude of the short-circuit current. It is demonstrated that if the faulted phase from the higher voltage level leads the faulted phase from the lower voltage level, a distance relay at the higher voltage level sees the fault in the forward direction, whereas a distance relay...

  18. 30 CFR 77.902 - Low- and medium-voltage ground check monitor circuits.

    Science.gov (United States)

    2010-07-01

    ... medium-voltage resistance grounded systems to portable and mobile equipment shall include a fail safe... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Low- and medium-voltage ground check monitor... OF UNDERGROUND COAL MINES Low- and Medium-Voltage Alternating Current Circuits § 77.902 Low- and...

  19. Symmetry-Breaking Charge Transfer in a Zinc Chlorodipyrrin Acceptor for High Open Circuit Voltage Organic Photovoltaics

    KAUST Repository

    Bartynski, Andrew N.; Gruber, Mark; Das, Saptaparna; Rangan, Sylvie; Mollinger, Sonya; Trinh, Cong; Bradforth, Stephen E.; Vandewal, Koen; Salleo, Alberto; Bartynski, Robert A.; Bruetting, Wolfgang; Thompson, Mark E.

    2015-01-01

    © 2015 American Chemical Society. Low open-circuit voltages significantly limit the power conversion efficiency of organic photovoltaic devices. Typical strategies to enhance the open-circuit voltage involve tuning the HOMO and LUMO positions

  20. Spectroscopic measurements with a silicon drift detector having a continuous implanted drift cathode-voltage divider

    CERN Document Server

    Bonvicini, V; D'Acunto, L; Franck, D; Gregorio, A; Pihet, P; Rashevsky, A; Vacchi, A; Vinogradov, L I; Zampa, N

    2000-01-01

    A silicon drift detector (SDD) prototype where the drift electrode also plays the role of a high-voltage divider has been realised and characterised for spectroscopic applications at near-room temperatures. Among the advantages of this design, is the absence of metal on the sensitive surface which makes this detector interesting for soft X-rays. The detector prototype has a large sensitive area (2x130 mm sup 2) and the charge is collected by two anodes (butterfly-like detector). The energy resolution of a such a detector has been investigated at near-room temperatures using a commercial, hybrid, low-noise charge-sensitive preamplifier. The results obtained for the X-ray lines from sup 5 sup 5 Fe and sup 2 sup 4 sup 1 Am are presented.

  1. Research of Measurement Circuits for High Voltage Current Transformer Based on Rogowski Coils

    Directory of Open Access Journals (Sweden)

    Yan Bing

    2014-02-01

    Full Text Available The electronic current transformer plays an irreplaceable position in the field of relay protection and current measurement of the power system. Rogowski coils are used as sensor parts, and in order to improve the measurement accuracy and reliability, the circuits at the high voltage system are introduced and improved in this paper, including the analog integral element, the filtering circuit and the phase shift circuit. Simulations results proved the reliability and accuracy of the improved circuits.

  2. Near-Threshold Computing and Minimum Supply Voltage of Single-Rail MCML Circuits

    Directory of Open Access Journals (Sweden)

    Ruiping Cao

    2014-01-01

    Full Text Available In high-speed applications, MOS current mode logic (MCML is a good alternative. Scaling down supply voltage of the MCML circuits can achieve low power-delay product (PDP. However, the current almost all MCML circuits are realized with dual-rail scheme, where the NMOS configuration in series limits the minimum supply voltage. In this paper, single-rail MCML (SRMCML circuits are described, which can avoid the devices configuration in series, since their logic evaluation block can be realized by only using MOS devices in parallel. The relationship between the minimum supply voltage of the SRMCML circuits and the model parameters of MOS transistors is derived, so that the minimum supply voltage can be estimated before circuit designs. An MCML dynamic flop-flop based on SRMCML is also proposed. The optimization algorithm for near-threshold sequential circuits is presented. A near-threshold SRMCML mode-10 counter based on the optimization algorithm is verified. Scaling down the supply voltage of the SRMCML circuits is also investigated. The power dissipation, delay, and power-delay products of these circuits are carried out. The results show that the near-threshold SRMCML circuits can obtain low delay and small power-delay product.

  3. A Voltage Mode Memristor Bridge Synaptic Circuit with Memristor Emulators

    Directory of Open Access Journals (Sweden)

    Leon Chua

    2012-03-01

    Full Text Available A memristor bridge neural circuit which is able to perform signed synaptic weighting was proposed in our previous study, where the synaptic operation was verified via software simulation of the mathematical model of the HP memristor. This study is an extension of the previous work advancing toward the circuit implementation where the architecture of the memristor bridge synapse is built with memristor emulator circuits. In addition, a simple neural network which performs both synaptic weighting and summation is built by combining memristor emulators-based synapses and differential amplifier circuits. The feasibility of the memristor bridge neural circuit is verified via SPICE simulations.

  4. Detailed Analysis of the Transient Voltage in a JT-60SA PF Coil Circuit

    International Nuclear Information System (INIS)

    Yamauchi, K.; Shimada, K.; Terakado, T.; Matsukawa, M.; Coletti, R.; Lampasi, A.; Gaio, E.; Coletti, A.; Novello, L.

    2013-01-01

    A superconducting coil system is actually complicated by the distributed parameters, e.g. the distributed mutual inductance among turns and the distributed capacitance between adjacent conductors. In this paper, such a complicated system was modeled with a reasonably simplified circuit network with lumped parameters. Then, a detailed circuit analysis was conducted to evaluate the possible voltage transient in the coil circuit. As a result, an appropriate (minimum) snubber capacitance for the Switching Network Unit, which is a fast high voltage generation circuit in JT-60SA, was obtained. (fusion engineering)

  5. Surge Protection in Low-Voltage AC Power Circuits: An Anthology

    Science.gov (United States)

    Martzloff, F. D.

    2002-10-01

    The papers included in this part of the Anthology provide basic information on the propagation of surges in low-voltage AC power circuits. The subject was approached by a combination of experiments and theoretical considerations. One important distinction is made between voltage surges and current surges. Historically, voltage surges were the initial concern. After the introduction and widespread use of current-diverting surge-protective devices at the point-of-use, the propagation of current surges became a significant factor. The papers included in this part reflect this dual dichotomy of voltage versus current and impedance mismatch effects versus simple circuit theory.

  6. A new high-voltage level-shifting circuit for half-bridge power ICs

    International Nuclear Information System (INIS)

    Kong Moufu; Chen Xingbi

    2013-01-01

    In order to reduce the chip area and improve the reliability of HVICs, a new high-voltage level-shifting circuit with an integrated low-voltage power supply, two PMOS active resistors and a current mirror is proposed. The integrated low-voltage power supply not only provides energy for the level-shifting circuit and the logic circuit, but also provides voltage signals for the gates and sources of the PMOS active resistors to ensure that they are normally-on. The normally-on PMOS transistors do not, therefore, need to be fabricated in the depletion process. The current mirror ensures that the level-shifting circuit has a constant current, which can reduce the process error of the high-voltage devices of the circuit. Moreover, an improved RS trigger is also proposed to improve the reliability of the circuit. The proposed level-shifting circuit is analyzed and confirmed by simulation with MEDICI, and the simulation results show that the function is achieved well. (semiconductor integrated circuits)

  7. 30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

    Science.gov (United States)

    2010-07-01

    ... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance grounded systems. [Statutory Provisions] On and after September 30, 1970, high-voltage, resistance grounded systems... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits on high-voltage...

  8. General Voltage Feedback Circuit Model in the Two-Dimensional Networked Resistive Sensor Array

    Directory of Open Access Journals (Sweden)

    JianFeng Wu

    2015-01-01

    Full Text Available To analyze the feature of the two-dimensional networked resistive sensor array, we firstly proposed a general model of voltage feedback circuits (VFCs such as the voltage feedback non-scanned-electrode circuit, the voltage feedback non-scanned-sampling-electrode circuit, and the voltage feedback non-scanned-sampling-electrode circuit. By analyzing the general model, we then gave a general mathematical expression of the effective equivalent resistor of the element being tested in VFCs. Finally, we evaluated the features of VFCs with simulation and test experiment. The results show that the expression is applicable to analyze the VFCs’ performance of parameters such as the multiplexers’ switch resistors, the nonscanned elements, and array size.

  9. Optimal condition of memristance enhancement circuit using external voltage source

    Directory of Open Access Journals (Sweden)

    Hiroya Tanaka

    2014-05-01

    Full Text Available Memristor provides nonlinear response in the current-voltage characteristic and the memristance is modulated using an external voltage source. We point out by solving nonlinear equations that an optimal condition of the external voltage source exists for maximizing the memristance in such modulation scheme. We introduce a linear function to describe the nonlinear time response and derive an important design guideline; a constant ratio of the frequency to the amplitude of the external voltage source maximizes the memristance. The analysis completely accounts for the memristance behavior.

  10. CMOS-compatible high-voltage integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Parpia, Z

    1988-01-01

    Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

  11. Reduced voltage losses yield 10% efficient fullerene free organic solar cells with >1 V open circuit voltages

    KAUST Repository

    Baran, D.; Kirchartz, T.; Wheeler, S.; Dimitrov, S.; Abdelsamie, Maged; Gorman, J.; Ashraf, Raja; Holliday, S.; Wadsworth, A.; Gasparini, N.; Kaienburg, P.; Yan, H.; Amassian, Aram; Brabec, C. J.; Durrant, J. R.; McCulloch, Iain

    2016-01-01

    of high recombination losses, which empirically limit the open-circuit voltage (Voc) to typically less than 1 V. Here we show that this empirical limit can be overcome using non-fullerene acceptors blended with the low band gap polymer PffBT4T-2DT leading

  12. Voltage-Mode All-Pass Filters Including Minimum Component Count Circuits

    Directory of Open Access Journals (Sweden)

    Sudhanshu Maheshwari

    2007-01-01

    Full Text Available This paper presents two new first-order voltage-mode all-pass filters using a single-current differencing buffered amplifier and four passive components. Each circuit is compatible to a current-controlled current differencing buffered amplifier with only two passive elements, thus resulting in two more circuits, which employ a capacitor, a resistor, and an active element, thus using a minimum of active and passive component counts. The proposed circuits possess low output impedance, and hence can be easily cascaded for voltage-mode systems. PSPICE simulation results are given to confirm the theory.

  13. Open circuit voltage-decay behavior in amorphous p-i-n solar due to injection

    Science.gov (United States)

    Smrity, Manu; Dhariwal, S. R.

    2018-05-01

    The paper deals with the basic recombination processes at the dangling bond and the band tail states at various levels of injection, expressed in terms of short-circuit current density and their role in the behavior of amorphous solar cells. As the level of injection increases the fill factor decreases whereas the open circuit voltage increases very slowly, showing a saturation tendency. Calculations have been done for two values of tail state densities and shows that with an increase in tail state densities both, the fill factor and open circuit voltage decreases, results an overall degradation of the solar cell.

  14. Voltage Recovery of Grid-Connected Wind Turbines with DFIG After a Short-Circuit Fault

    DEFF Research Database (Denmark)

    Sun, Tao; Chen, Zhe; Blaabjerg, Frede

    2004-01-01

    The fast development of wind power generation brings new requirements for wind turbine integration to the network. After clearance of an external short-circuit fault, the voltage at the wind turbine terminal should be re-established with minimized power losses. This paper concentrates on voltage......-establish the wind turbine terminal voltage after the clearance of an external short-circuit fault, and the restore the normal operation of the variable speed wind turbine with DFIG, which has been demonstrated by simulation results....

  15. Polymer solar cells with enhanced open-circuit voltage and efficiency

    Science.gov (United States)

    Chen, Hsiang-Yu; Hou, Jianhui; Zhang, Shaoqing; Liang, Yongye; Yang, Guanwen; Yang, Yang; Yu, Luping; Wu, Yue; Li, Gang

    2009-11-01

    Following the development of the bulk heterojunction structure, recent years have seen a dramatic improvement in the efficiency of polymer solar cells. Maximizing the open-circuit voltage in a low-bandgap polymer is one of the critical factors towards enabling high-efficiency solar cells. Study of the relation between open-circuit voltage and the energy levels of the donor/acceptor in bulk heterojunction polymer solar cells has stimulated interest in modifying the open-circuit voltage by tuning the energy levels of polymers. Here, we show that the open-circuit voltage of polymer solar cells constructed based on the structure of a low-bandgap polymer, PBDTTT, can be tuned, step by step, using different functional groups, to achieve values as high as 0.76 V. This increased open-circuit voltage combined with a high short-circuit current density results in a polymer solar cell with a power conversion efficiency as high as 6.77%, as certified by the National Renewable Energy Laboratory.

  16. Short-circuit protection of LLC resonant converter using voltages across resonant tank elements

    Directory of Open Access Journals (Sweden)

    Denys Igorovych Zaikin

    2015-06-01

    Full Text Available This paper describes two methods for the short-circuit protection of the LLC resonant converter. One of them uses the voltage across the capacitor and the other uses the voltage across the inductor of the resonant tank. These voltages can be processed (integrated or differentiated to recover the resonant tank current. The two circuits illustrated in the described methods make it possible to develop a robust LLC converter design and to avoid using lossy current measurement elements, such as a shunt resistor or current transformer. The methods also allow measuring resonant tank current without breaking high-current paths and connecting the measuring circuit in parallel with the inductor or capacitor of the resonant tank. Practical implementations of these indirect current measurements have been experimentally tested for the short-circuit protection of the 1600 W LLC converter.

  17. High-voltage integrated transmitting circuit with differential driving for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Færch, Kjartan Ullitz

    2016-01-01

    In this paper, a high-voltage integrated differential transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is presented. Due to its application, area and power consumption are critical and need to be minimized. The circuitry...... is designed and implemented in AMS 0.35 μ m high-voltage process. Measurements are performed on the fabricated integrated circuit in order to assess its performance. The transmitting circuit consists of a low-voltage control logic, pulse-triggered level shifters and a differential output stage that generates...... conditions is 0.936 mW including the load. The integrated circuits measured prove to be consistent and robust to local process variations by measurements....

  18. Effect of Circuit Breaker Shunt Resistance on Chaotic Ferroresonance in Voltage Transformer

    Directory of Open Access Journals (Sweden)

    RADMANESH, H.

    2010-08-01

    Full Text Available Ferroresonance or nonlinear resonance is a complex electrical phenomenon, which may cause over voltages and over currents in the electrical power system which endangers the system reliability and continuous safe operating. This paper studies the effect of circuit breaker shunt resistance on the control of chaotic ferroresonance in a voltage transformer. It is expected that this resistance generally can cause ferroresonance dropout. For confirmation this aspect Simulation has been done on a one phase voltage transformer rated 100VA, 275kV. The magnetization characteristic of the transformer is modeled by a single-value two-term polynomial with q=7. The simulation results reveal that considering the shunt resistance on the circuit breaker, exhibits a great mitigating effect on ferroresonance over voltages. Significant effect on the onset of chaos, the range of parameter values that may lead to chaos along with ferroresonance voltages has been obtained and presented.

  19. 30 CFR 77.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

    Science.gov (United States)

    2010-07-01

    ... circuits on high-voltage resistance grounded systems. On and after September 30, 1971, all high-voltage... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits on high-voltage resistance grounded systems. 77.803 Section 77.803 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION...

  20. A temperature monitor circuit with small voltage sensitivity using a topology-reconfigurable ring oscillator

    Science.gov (United States)

    Kishimoto, Tadashi; Ishihara, Tohru; Onodera, Hidetoshi

    2018-04-01

    In this paper, we propose a temperature monitor circuit that exhibits a small supply voltage sensitivity adopting a circuit topology of a reconfigurable ring oscillator. The circuit topology of the monitor is crafted such that the oscillation frequency is determined by the amount of subthreshold leakage current, which has an exponential dependence on temperature. Another important characteristic of the monitor is its small supply voltage sensitivity. The measured oscillation frequency of a test chip fabricated in a 65 nm CMOS process varies only 2.6% under a wide range of supply voltages from 0.4 to 1.0 V at room temperature. The temperature estimation error ranges from -0.3 to 0.4 °C over a temperature range of 10 to 100 °C.

  1. Low-power operation using self-timed circuits and adaptive scaling of the supply voltage

    DEFF Research Database (Denmark)

    Nielsen, Lars Skovby; Niessen, C.; Sparsø, Jens

    1994-01-01

    Recent research has demonstrated that for certain types of applications like sampled audio systems, self-timed circuits can achieve very low power consumption, because unused circuit parts automatically turn into a stand-by mode. Additional savings may be obtained by combining the self......-timed circuits with a mechanism that adaptively adjusts the supply voltage to the smallest possible, while maintaining the performance requirements. This paper describes such a mechanism, analyzes the possible power savings, and presents a demonstrator chip that has been fabricated and tested. The idea...... of voltage scaling has been used previously in synchronous circuits, and the contributions of the present paper are: 1) the combination of supply scaling and self-timed circuitry which has some unique advantages, and 2) the thorough analysis of the power savings that are possible using this technique.>...

  2. SEMICONDUCTOR INTEGRATED CIRCUITS: A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure

    Science.gov (United States)

    Jizhi, Liu; Xingbi, Chen

    2009-12-01

    A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate.

  3. Distance protection of multiple-circuit shared tower transmission lines with different voltages

    DEFF Research Database (Denmark)

    Silva, Filipe Miguel Faria da; Bak, Claus Leth

    2017-01-01

    combined faults, being advised to increase the resistive limit of the protection zone, if the network has lower short-circuit power. It is recommended to assure that the fault can only happen for cases where the faulted phase from the higher voltage level leads the faulted phase from the lower voltage......Multiple-circuit transmission lines combining different voltage levels in one tower present extra challenges when setting a protection philosophy, as faults between voltage levels are possible. In this study, the fault loop impedance of combined faults is compared with the fault loop impedance......-phase-to-ground faults. It is also demonstrated that the fault loop impedance of combined faults is more resistive, when compared with equivalent single-phase-to-ground faults. It is concluded that the settings used to protect a line against single-phase-to-ground faults are capable of protecting the line against...

  4. Background voltage distortion influence on power electric systems in the presence of the Steinmetz circuit

    Energy Technology Data Exchange (ETDEWEB)

    Sainz, Luis; Pedra, Joaquin [Department of Electrical Engineering, ETSEIB-UPC, Av. Diagonal 647, 08028 Barcelona (Spain); Caro, Manuel [IDOM Ingenieria y Arquitectura, C. Barcas 2, 46002 Valencia (Spain)

    2009-01-15

    In traction systems, it is usual to connect reactances in delta configuration with single-phase loads to reduce voltage unbalances and avoid electric system operation problems. This set is known as Steinmetz circuit. Parallel and series resonances can occur due to the capacitive reactance of the Steinmetz circuit and affect power quality. In this paper, the series resonance ''observed'' from the supply system is numerically located. The study of this resonance is important to avoid problems due to background voltage distortion. Experimental measurements are also presented to validate the obtained numerical results. (author)

  5. Highly efficient integrated rectifier and voltage boosting circuits for energy harvesting applications

    Directory of Open Access Journals (Sweden)

    D. Maurath

    2008-05-01

    Full Text Available This paper presents novel circuit concepts for integrated rectifiers and voltage converting interfaces for energy harvesting micro-generators. In the context of energy harvesting, usually only small voltages are supplied by vibration-driven generators. Therefore, rectification with minimum voltage losses and low reverse currents is an important issue. This is realized by novel integrated rectifiers which were fabricated and are presented in this article. Additionally, there is a crucial need for dynamic load adaptation as well as voltage up-conversion. A circuit concept is presented, which is able to obtain both requirements. This generator interface adapts its input impedance for an optimal energy transfer efficiency. Furthermore, this generator interface provides implicit voltage up-conversion, whereas the generator output energy is stored on a buffer, which is connected to the output of the voltage converting interface. As simulations express, this fully integrated converter is able to boost ac-voltages greater than |0.35 V| to an output dc-voltage of 2.0 V–2.5 V. Thereby, high harvesting efficiencies above 80% are possible within the entire operational range.

  6. Elucidating the interplay between dark current coupling and open circuit voltage in organic photovoltaics

    KAUST Repository

    Erwin, Patrick; Thompson, Mark E.

    2011-01-01

    made with the structure indium tin oxide/copper phthalocyanine (200 Å)/PDI (200 Å)/bathocuproine (100 Å)/aluminum (1000 Å). We found that PDIs with larger substituents produced higher open circuit voltages (VOC's) despite the donor acceptor interface

  7. Battery open-circuit voltage estimation by a method of statistical analysis

    NARCIS (Netherlands)

    Snihir, Iryna; Rey, William; Verbitskiy, Evgeny; Belfadhel-Ayeb, Afifa; Notten, Peter H.L.

    2006-01-01

    The basic task of a battery management system (BMS) is the optimal utilization of the stored energy and minimization of degradation effects. It is critical for a BMS that the state-of-charge (SoC) be accurately determined. Open-circuit voltage (OCV) is directly related to the state-of-charge of the

  8. Verification of the short-circuit current making capability of high-voltage switching devices

    NARCIS (Netherlands)

    Smeets, R.P.P.; Linden, van der W.A.

    2001-01-01

    Switching-in of short-circuit current leads to pre-arcing in the switching device. Pre-arcing affects the ability of switchgear to close and latch. In three-phase systems, making is associated with transient voltage phenomena that may have a significant impact on the duration of the pre-arcing

  9. New circuits high-voltage pulse generators with inductive-capacitive energy storage

    International Nuclear Information System (INIS)

    Gordeev, V.S.; Myskov, G.A.

    2001-01-01

    The paper describes new electric circuits of multi-cascade generators based on stepped lines. The distinction of the presented circuits consists in initial storage of energy in electric and magnetic fields simultaneously. The circuit of each generator,relations of impedances,values of initial current and charge voltages are selected in such a manner that the whole of initially stored energy is concentrated at the generator output as a result of transient wave processes. In ideal case the energy is transferred with 100% efficiency to the resistive load where a rectangular voltage pulse is formed, whose duration is equals to the double electrical length of the individual cascade. At the same time there is realized a several time increase of output voltage as compared to the charge voltage of the generator. The use of the circuits proposed makes it possible to ensure a several time increase (as compared to the selection of the number of cascades) of the generator energy storage, pulse current and output electric power

  10. A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure

    International Nuclear Information System (INIS)

    Liu Jizhi; Chen Xingbi

    2009-01-01

    A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate. (semiconductor integrated circuits)

  11. A quasi-3-dimensional simulation method for a high-voltage level-shifting circuit structure

    Energy Technology Data Exchange (ETDEWEB)

    Liu Jizhi; Chen Xingbi, E-mail: jzhliu@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2009-12-15

    A new quasi-three-dimensional (quasi-3D) numeric simulation method for a high-voltage level-shifting circuit structure is proposed. The performances of the 3D structure are analyzed by combining some 2D device structures; the 2D devices are in two planes perpendicular to each other and to the surface of the semiconductor. In comparison with Davinci, the full 3D device simulation tool, the quasi-3D simulation method can give results for the potential and current distribution of the 3D high-voltage level-shifting circuit structure with appropriate accuracy and the total CPU time for simulation is significantly reduced. The quasi-3D simulation technique can be used in many cases with advantages such as saving computing time, making no demands on the high-end computer terminals, and being easy to operate. (semiconductor integrated circuits)

  12. Modeling of the Voltage Waves in the LHC Main Dipole Circuits

    CERN Document Server

    Ravaioli, E; Formenti, F; Steckert, J; Thiesen, H; Verweij, A

    2012-01-01

    When a fast power abort is triggered in the LHC main dipole chain, voltage transients are generated at the output of the power converter and across the energy-extraction switches. The voltage waves propagate through the chain of 154 superconducting dipoles and can have undesired effects leading to spurious triggering of the quench protection system and firing of the quench heaters. The phase velocity of the waves travelling along the chain changes due to the inhomogeneous AC behavior of the dipoles. Furthermore, complex phenomena of reflection and superposition are present in the circuit. For these reasons analytical calculations are not sufficient for properly analyzing the circuit behavior after a fast power abort. The transients following the switch-off of the power converter and the opening of the switches are analyzed by means of a complete electrical model, developed with the Cadence© suite (PSpice© based). The model comprises all the electrical components of the circuit, additional components simula...

  13. A Novel Programmable CMOS Fuzzifiers Using Voltage-to-Current Converter Circuit

    Directory of Open Access Journals (Sweden)

    K. P. Abdulla

    2012-01-01

    Full Text Available This paper presents a new voltage-input, current-output programmable membership function generator circuit (MFC using CMOS technology. It employs a voltage-to-current converter to provide the required current bias for the membership function circuit. The proposed MFC has several advantageous features. This MFC can be reconfigured to perform triangular, trapezoidal, S-shape, Z-Shape, and Gaussian membership forms. This membership function can be programmed in terms of its width, slope, and its center locations in its universe of discourses. The easily adjustable characteristics of the proposed circuit and its accuracy make it suitable for embedded system and industrial control applications. The proposed MFC is designed using the spice software, and simulation results are obtained.

  14. Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery

    International Nuclear Information System (INIS)

    Cheng Zai-Jun; San Hai-Sheng; Chen Xu-Yuan; Liu Bo; Feng Zhi-Hong

    2011-01-01

    A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated. Under the irradiation of a 4×4 mm 2 planar solid 63 Ni source with an activity of 2 mCi, the open-circuit voltage V oc of the fabricated single 2×2mm 2 cell reaches as high as 1.62 V, the short-circuit current density J sc is measured to be 16nA/cm 2 . The microbattery has a fill factor of 55%, and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%. The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices. (cross-disciplinary physics and related areas of science and technology)

  15. New pixel circuit compensating poly-si TFT threshold-voltage shift for a driving AMOLED

    International Nuclear Information System (INIS)

    Fan, C. L.; Lin, Y. Y.; Lin, B. S.; Chang, J. Y.; Fan, C. L.; Chang, H. C.

    2010-01-01

    This study presents a novel pixel circuit that uses only n-type low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS-TFTs) to simplify the fabrication process of active matrix organic light-emitting diode (AMOLED) displays. The proposed pixel circuit consists of five switching TFTs, one driving TFT (DTFT), and two capacitors. The output current and the OLED anode voltage error rates are about 3% and 0.7%, respectively. Thus, the pixel circuit can realize uniform output current with high immunity to the poly-Si TFT threshold voltage deviation. The proposed novel pixel design has great potential for use in large-size, high-resolution AMOLED displays.

  16. Design and validation of a high-voltage levitation circuit for electrostatic accelerometers

    Energy Technology Data Exchange (ETDEWEB)

    Li, G.; Wu, S. C.; Zhou, Z. B.; Bai, Y. Z.; Hu, M.; Luo, J. [MOE Key Laboratory of Fundamental Physical Quantities Measurements, School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)

    2013-12-15

    A simple high-voltage circuit with a voltage range of 0 to 900 V and an open-loop bandwidth of 11 kHz is realized by using an operational amplifier and a MOSFET combination. The circuit is used for the levitation of a test mass of 71 g, suspended below the top-electrodes with a gap distance of 57 μm, so that the performance of an electrostatic accelerometer can be tested on the ground. The translation noise of the accelerometer, limited by seismic noise, is about 4 × 10{sup −8} m/s{sup 2}/Hz{sup 1/2} at 0.1 Hz, while the high-voltage coupling noise is one-order of magnitude lower.

  17. Improvement of diagnostic techniques and electrical circuit in azo dye degradation by high voltage electrical discharge

    International Nuclear Information System (INIS)

    Shen Yongjun; Lei Lecheng; Zhang Xingwang; Zhou Minghua; Zhang Yi

    2008-01-01

    Fast electrical diagnostics and improvement of electrical circuits for methyl orange (MO) degradation by high voltage pulsed electrical discharge were investigated. To eliminate electromagnetic radiation, several effective methods were employed. RG 218 coaxial cable was substituted for the common transmission lines to transmit high voltage pulses, and multi-lines in parallel were earthed to avoid electromagnetic interference and, additionally, to reduce the stray inductance of the electrical circuit and increase the pulse rise rate to reduce the energy losses in the transmission system. The problem of the differences in the bandwidths of voltage and current probes causing an error in the calculation of energy dissipation was avoided by reducing the bandwidths of voltage and current measurements to the same value. The real discharge current was obtained by subtracting the capacitive current from the total current. The energy per pulse obtained in the reactor before and after improvement of the diagnostics and electrical circuit were 15.5 mJ and 26.8 mJ, respectively, and the energy efficiencies of MO degradation were 1.34 x 10 -9 mol/J and 1.95 x 10 -9 mol/J, respectively

  18. The open-circuit voltage in microcrystalline silicon solar cells of different degrees of crystallinity

    International Nuclear Information System (INIS)

    Nath, Madhumita; Roca i Cabarrocas, P.; Johnson, E.V.; Abramov, A.; Chatterjee, P.

    2008-01-01

    We have used a detailed electrical-optical computer model (ASDMP) in conjunction with the experimental characterization of microcrystalline silicon thin-film solar cells of different degrees of crystallinity (but having identical P- and N-layers) to understand the observed decrease of the open-circuit voltage with increasing crystalline fraction. In order to model all aspects of the experimental current density-voltage and quantum efficiency characteristics of cells having low (∼ 75%) and high (over 90%) crystalline fraction, we had to assume both a higher mobility gap defect density and a lower band gap for the more crystallized material. The former fact is widely known to bring down the open-circuit voltage. Our calculations also reveal that the proximity of the quasi-Fermi levels to the energy bands in the cell based on highly crystallized (and assumed to have a lower band gap) microcrystalline silicon results in higher free and trapped carrier densities in this device. The trapped hole population is particularly high at and close to the P/I interface on account of the higher inherent defect density in this region and the fact that the hole quasi-Fermi level is close to the valence band edge here. This fact results in a strong interface field, a collapse of the field in the volume, and hence a lower open-circuit voltage. Thus a combination of higher mobility gap defects and a lower band gap is probably the reason for the lower open-circuit voltage in cells based on highly crystallized microcrystalline silicon

  19. Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

    Science.gov (United States)

    Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

    2012-01-01

    Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

  20. Equivalent circuit of frog atrial tissue as determined by voltage clamp-unclamp experiments.

    Science.gov (United States)

    Tarr, M; Trank, J

    1971-11-01

    The equivalent circuit that has been used in the analysis of nerve voltage-clamp data is that of the membrane capacity in parallel with the membrane resistance. Voltage-clamp experiments on frog atrial tissue indicate that this circuit will not suffice for this cardiac tissue. The change in membrane current associated with a step change in membrane potential does not show a rapid spike of capacitive current as would be expected for the simple parallel resistance-capacitance network. Rather, there is a step change in current followed by an exponential decay in current with a time constant of about 1 msec. This relatively slow capacitive charging current suggests that there is a resistance in series with the membrane capacity. A possible equivalent circuit is that of a series resistance external to the parallel resistance-capacitance network of the cell membranes. Another possible circuit assumes that the series resistance is an integral part of the cell membrane. The data presented in this paper demonstrate that the equivalent circuit of a bundle of frog atrial muscle is that of an external resistance in series with the cell membranes.

  1. FEA identification of high order generalized equivalent circuits for MF high voltage transformers

    CERN Document Server

    Candolfi, Sylvain; Cros, Jérôme; Aguglia, Davide

    2015-01-01

    This paper presents a specific methodology to derive high order generalized equivalent circuits from electromagnetic finite element analysis for high voltage medium frequency and pulse transformers by splitting the main windings in an arbitrary number of elementary windings. With this modeling approach, the dynamic model of the transformer over a large bandwidth is improved and the order of the generalized equivalent circuit can be adapted to a specified bandwidth. This efficient tool can be used by the designer to quantify the influence of the local structure of transformers on their dynamic behavior. The influence of different topologies and winding configurations is investigated. Several application examples and an experimental validation are also presented.

  2. The Effect of Current-Limiting Reactors on the Tripping of Short Circuits in High-Voltage Electrical Equipment

    International Nuclear Information System (INIS)

    Volkov, M. S.; Gusev, Yu. P.; Monakov, Yu. V.; Cho, Gvan Chun

    2016-01-01

    The insertion of current-limiting reactors into electrical equipment operating at a voltage of 110 and 220 kV produces a change in the parameters of the transient recovery voltages at the contacts of the circuit breakers for disconnecting short circuits, which could be the reason for the increase in the duration of the short circuit, damage to the electrical equipment and losses in the power system. The results of mathematical modeling of the transients, caused by tripping of the short circuit in a reactive electric power transmission line are presented, and data are given on the negative effect of a current-limiting resistor on the rate of increase and peak value of the transient recovery voltages. Methods of ensuring the standard requirements imposed on the parameters of the transient recovery voltages when using current-limiting reactors in the high-voltage electrical equipment of power plants and substations are proposed and analyzed

  3. Asymmetrical short circuits in medium-voltage networks with grounded neutral through resistance

    Energy Technology Data Exchange (ETDEWEB)

    Tanasescu, M.; Maries, H.

    1981-01-01

    This article introduces the concepts of ''damage to ground'' and ''current to ground indicator'', which characterize the efficiency of the operating mode of the neutral. The values of these two indicators are assigned by directive (eletric power plan design instruction PE109/1980) and must be provided when selecting the parameters of compensating devices installed in the neutral. Possible aymmetrical short circuits in medium-voltage networks with neutral ground are examined. Formulas are derived for determining the short-circuiting currents and undamaged phase voltages in order to determine the damage to ground indicator and ground current indicator; an example of a calculation is given.

  4. Driving CZTS to the SQ Limit: Solving the Open Circuit Voltage Problem

    Energy Technology Data Exchange (ETDEWEB)

    Haight, Richard A. [IBM Research, Yorktown, NY (United States). Thomas J. Watson Research Center; McCandless, Brian E. [Univ. of Delaware, Newark, DE (United States); Kummel, Andrew C. [Univ. of California, San Diego, CA (United States); Gordon, Roy G. [Harvard Univ., Cambridge, MA (United States)

    2016-12-15

    A key objective of this 3 year research effort was to reduce the open circuit voltage (Voc) deficit, defined as the difference between the absorber band gap and the measured Voc to below 475mV from values at the beginning of this work of 630-730mV. To achieve this reduction, along with the attendant goals of higher Voc and efficiency, detailed studies into the fundamental understanding of existing limitations were undertaken.

  5. The effect of a defective BSF layer on solar cell open circuit voltage. [Back Surface Field

    Science.gov (United States)

    Weizer, V. G.

    1985-01-01

    A straightforward analysis of special limiting cases has permitted the determination of the range of possible open circuit voltage losses due to a defective BSF (back surface field) layer. An important result of the analysis is the finding that it is possible to have a fully effective BSF region, regardless of the spatial distribution of the defective areas, as long as the total defective area is reduced below certain limits. Distributed defects were found to be much more harmful than lumped defects.

  6. Thermocleavable Materials for Polymer Solar Cells with High Open Circuit Voltage-A Comparative Study

    DEFF Research Database (Denmark)

    Tromholt, Thomas; Gevorgyan, Suren; Jørgensen, Mikkel

    2009-01-01

    The search for polymer solar cells giving a high open circuit voltage was conducted through a comparative study of four types of bulk-heterojunction solar cells employing different photoactive layers. As electron donors the thermo-cleavable polymer poly-(3-(2-methylhexyloxycarbonyl)dithiophene) (P3......MHOCT) and unsubstituted polythiophene (PT) were used, the latter of which results from thermo cleaving the former at 310 °C. As reference, P3HT solar cells were built in parallel. As electron acceptors, either PCBM or bis-[60]PCBM were used. In excess of 300 solar cells were produced under as identical...... conditions as possible, varying only the material combination of the photo active layer. It was observed that on replacing PCBM with bis[60]PCBM, the open circuit voltage on average increased by 100 mV for P3MHOCT and 200 mV for PT solar cells. Open circuit voltages approaching 1 V were observed for the PT:bis...

  7. Detection Method for Soft Internal Short Circuit in Lithium-Ion Battery Pack by Extracting Open Circuit Voltage of Faulted Cell

    Directory of Open Access Journals (Sweden)

    Minhwan Seo

    2018-06-01

    Full Text Available Early detection of internal short circuit which is main cause of thermal runaway in a lithium-ion battery is necessary to ensure battery safety for users. As a promising fault index, internal short circuit resistance can directly represent degree of the fault because it describes self-discharge phenomenon caused by the internal short circuit clearly. However, when voltages of individual cells in a lithium-ion battery pack are not provided, the effect of internal short circuit in the battery pack is not readily observed in whole terminal voltage of the pack, leading to difficulty in estimating accurate internal short circuit resistance. In this paper, estimating the resistance with the whole terminal voltages and the load currents of the pack, a detection method for the soft internal short circuit in the pack is proposed. Open circuit voltage of a faulted cell in the pack is extracted to reflect the self-discharge phenomenon obviously; this process yields accurate estimates of the resistance. The proposed method is verified with various soft short conditions in both simulations and experiments. The error of estimated resistance does not exceed 31.2% in the experiment, thereby enabling the battery management system to detect the internal short circuit early.

  8. Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

    Energy Technology Data Exchange (ETDEWEB)

    Hernández-Rosales, E.; Cedeño, E. [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil); Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Hernandez-Wong, J. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); CONACYT, México, DF, México (Mexico); Rojas-Trigos, J. B.; Marin, E. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Gandra, F. C. G.; Mansanares, A. M., E-mail: manoel@ifi.unicamp.br [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil)

    2016-07-25

    In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

  9. Suppression of the high-frequency disturbances in low-voltage circuits caused by disconnector operation in high-voltage open-air substations

    Energy Technology Data Exchange (ETDEWEB)

    Savic, M.S.

    1986-07-01

    The switching off and on of small capacitive currents charging busbar capacitances, connection conductors and open circuit breakers with disconnectors causes high-frequency transients in high-voltage networks. In low voltage circuits, these transient processes induce dangerous overvoltages for the electronic equipment in the substation. A modified construction of the disconnector with a damping resistor was investigated. Digital simulation of the transient process in a high-voltage network during the arcing period between the disconnector contacts with and without damping resistor were performed. A significant decrease of the arcing duration and the decrease of the electromagnetic field magnitude in the vicinity of the operating disconnector were noticed. In the low voltage circuit protected with the surge arrester, the overvoltage magnitude was not affected by the damping resistor due to the arrester protection effect.

  10. An Adaptive Estimation Scheme for Open-Circuit Voltage of Power Lithium-Ion Battery

    Directory of Open Access Journals (Sweden)

    Yun Zhang

    2013-01-01

    Full Text Available Open-circuit voltage (OCV is one of the most important parameters in determining state of charge (SoC of power battery. The direct measurement of it is costly and time consuming. This paper describes an adaptive scheme that can be used to derive OCV of the power battery. The scheme only uses the measurable input (terminal current and the measurable output (terminal voltage signals of the battery system and is simple enough to enable online implement. Firstly an equivalent circuit model is employed to describe the polarization characteristic and the dynamic behavior of the lithium-ion battery; the state-space representation of the electrical performance for the battery is obtained based on the equivalent circuit model. Then the implementation procedure of the adaptive scheme is given; also the asymptotic convergence of the observer error and the boundedness of all the parameter estimates are proven. Finally, experiments are carried out, and the effectiveness of the adaptive estimation scheme is validated by the experimental results.

  11. Simultaneous improvement in short circuit current, open circuit voltage, and fill factor of polymer solar cells through ternary strategy.

    Science.gov (United States)

    An, Qiaoshi; Zhang, Fujun; Li, Lingliang; Wang, Jian; Sun, Qianqian; Zhang, Jian; Tang, Weihua; Deng, Zhenbo

    2015-02-18

    We present a smart strategy to simultaneously increase the short circuit current (Jsc), the open circuit voltage (Voc), and the fill factor (FF) of polymer solar cells (PSCs). A two-dimensional conjugated small molecule photovoltaic material (SMPV1), as the second electron donor, was doped into the blend system of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C71-butyric acid methyl (PC71BM) to form ternary PSCs. The ternary PSCs with 5 wt % SMPV1 doping ratio in donors achieve 4.06% champion power conversion efficiency (PCE), corresponding to about 21.2% enhancement compared with the 3.35% PCE of P3HT:PC71BM-based PSCs. The underlying mechanism on performance improvement of ternary PSCs can be summarized as (i) harvesting more photons in the longer wavelength region to increase Jsc; (ii) obtaining the lower mixed highest occupied molecular orbital (HOMO) energy level by incorporating SMPV1 to increase Voc; (iii) forming the better charge carrier transport channels through the cascade energy level structure and optimizing phase separation of donor/acceptor materials to increase Jsc and FF.

  12. A novel on-chip high to low voltage power conversion circuit

    International Nuclear Information System (INIS)

    Wang Hui; Wang Songlin; Mou Zaixin; Guo Baolong; Lai Xinquan; Ye Qiang; Li Xianrui

    2009-01-01

    A novel power supply transform technique for high voltage IC based on the TSMC 0.6 μm BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm 2 area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/deg. C. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.

  13. Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage

    Science.gov (United States)

    Limpert, Steven; Burke, Adam; Chen, I.-Ju; Anttu, Nicklas; Lehmann, Sebastian; Fahlvik, Sofia; Bremner, Stephen; Conibeer, Gavin; Thelander, Claes; Pistol, Mats-Erik; Linke, Heiner

    2017-10-01

    Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated ‘hot carriers’ before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier, an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells.

  14. A novel on-chip high to low voltage power conversion circuit

    Energy Technology Data Exchange (ETDEWEB)

    Wang Hui; Wang Songlin; Mou Zaixin; Guo Baolong [Institute of Mechano-electronic Engineering, Xidian University, Xi' an 71007 (China); Lai Xinquan; Ye Qiang; Li Xianrui, E-mail: whui94@126.co [Institute of Electronic CAD, Xidian University, Xi' an 710071 (China)

    2009-03-15

    A novel power supply transform technique for high voltage IC based on the TSMC 0.6 mum BCD process is achieved. An adjustable bandgap voltage reference is presented which is different from the traditional power supply transform technique. It can be used as an internal power supply for high voltage IC by using the push-pull output stage to enhance its load capability. High-order temperature compensated circuit is designed to ensure the precision of the reference. Only 0.01 mm{sup 2} area is occupied using this novel power supply technique. Compared with traditional technique, 50% of the area is saved, 40% quiescent power loss is decreased, and the temperature coefficient of the reference is only 4.48 ppm/deg. C. Compared with the traditional LDO (low dropout) regulator, this power conversion architecture does not need external output capacitance and decreases the chip-pin and external components, so the PCB area and design cost are also decreased. The testing results show that this circuit works well.

  15. Design and study of photomultiplier pulse-shaping amplifier powered by the current flowing through a voltage divider

    International Nuclear Information System (INIS)

    Vladimir Popov

    2003-01-01

    A new version of Photomultiplier Tube (PMT) pulse amplifier, entirely powered by the current flowing through the base voltage divider, was designed and tested. This amplifier was designed for application in the JLAB G0 Experiment E00-006 as a part of high voltage base for XP2262 Photonis PMT. According to JLAB G0 experiment requirement, these PMT's operate with plastic scintillators at high counting rate (about MHz). Tests in JLAB experimental Hall C indicate that low energy gamma background cause up to 0.1 mA of PMT average anode current (without amplifier). At this radiation condition, PMT gain decreases by 50% within about 1 month of operation. The amplifier needs to reduce PMT anode current and to shape PMT anode pulse prior to sending it through a long cable line (more then 400 ft of RG-213 and RG-58 coax cables). Shaping of the PMT output pulse helps to reduce attenuation effect of the long cable line without significant reduction of timing accuracy. The results of this study of designed amplifier and PMT plus amplifier system are presented

  16. A SQUID gradiometer module with wire-wound pickup antenna and integrated voltage feedback circuit

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Guofeng [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Peter Gruenberg Institute (PGI-8), Forschungszentrum Juelich (FZJ), D-52425 Juelich (Germany); Joint Research Laboratory on Superconductivity and Bioelectronics, Collaboration between CAS-Shanghai and FZJ, Shanghai 200050 (China); Graduate University of the Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Yi, E-mail: y.zhang@fz-juelich.de [Peter Gruenberg Institute (PGI-8), Forschungszentrum Juelich (FZJ), D-52425 Juelich (Germany); Joint Research Laboratory on Superconductivity and Bioelectronics, Collaboration between CAS-Shanghai and FZJ, Shanghai 200050 (China); Zhang Shulin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Joint Research Laboratory on Superconductivity and Bioelectronics, Collaboration between CAS-Shanghai and FZJ, Shanghai 200050 (China); Krause, Hans-Joachim [Peter Gruenberg Institute (PGI-8), Forschungszentrum Juelich (FZJ), D-52425 Juelich (Germany); Joint Research Laboratory on Superconductivity and Bioelectronics, Collaboration between CAS-Shanghai and FZJ, Shanghai 200050 (China); and others

    2012-10-15

    The performance of the direct readout schemes for dc SQUID, Additional Positive Feedback (APF), noise cancellation (NC) and SQUID bootstrap circuit (SBC), have been studied in conjunction with planar SQUID magnetometers. In this paper, we examine the NC technique applied to a niobium SQUID gradiometer module with an Nb wire-wound antenna connecting to a dual-loop SQUID chip with an integrated voltage feedback circuit for suppression of the preamplifier noise contribution. The sensitivity of the SQUID gradiometer module is measured to be about 1 fT/(cm {radical}Hz) in the white noise range in a magnetically shielded room. Using such gradiometer, both MCG and MEG signals are recorded.

  17. Elucidating the interplay between dark current coupling and open circuit voltage in organic photovoltaics

    KAUST Repository

    Erwin, Patrick

    2011-01-01

    A short series of alkyl substituted perylenediimides (PDIs) with varying steric bulk are used to demonstrate the relationship between molecular structure, materials properties, and performance characteristics in organic photovoltaics. Devices were made with the structure indium tin oxide/copper phthalocyanine (200 Å)/PDI (200 Å)/bathocuproine (100 Å)/aluminum (1000 Å). We found that PDIs with larger substituents produced higher open circuit voltages (VOC\\'s) despite the donor acceptor interface gap (Δ EDA) remaining unchanged. Additionally, series resistance was increased simultaneously with VOC the effect of reducing short circuit current, making the addition of steric bulk a tradeoff that needs to be balanced to optimize power conversion efficiency. © 2011 American Institute of Physics.

  18. Safety of wet welding with increased open circuit voltages up to 150 V d.c

    International Nuclear Information System (INIS)

    Schmidt, K.; Kozig, G.; Ross, J.A.S.; Green, H.L.

    1991-01-01

    An experimental test programme was performed to demonstrate that wet welding with open circuit voltages up to 150 V d.c. would not result in dangerous situations for the diver induced by electric shock. Sea water, fresh water, different types of diving suits and some worst case situations, resulting from a disregard of good working practice were considered to be test parameters. In sea water a diver will not be endangered by corresponding electric potentials if good working practice is adopted. This was demonstrated even for worst case conditions, e.g. water leakage into the dry suit, accidental positioning to the diver between torch and work piece (stretched arm) and partial removal of coating from the welding rod. The fresh water tests demonstrated higher voltages on the diver but well below accepted threshold limit values. The term 'fresh water' should be critically considered, however, the test results relate only to the water conductivity studied. (orig.) With 30 figs [de

  19. Effect of recombination on the open-circuit voltage of a silicon solar cell

    Science.gov (United States)

    Von Roos, O.; Landsberg, P. T.

    1985-01-01

    A theoretical study of the influence of band-band Auger, band-trap Auger, and the ordinary Shockley-Read-Hall mechanism for carrier recombination on the open-circuit voltage VOC of a solar cell is presented. Under reasonable assumptions for the magnitude of rate constants and realistic values for trap densities, surface recombination velocities and band-gap narrowing, the maximum VOC for typical back surface field solar cells is found to lie in the range between 0.61 and 0.72 V independent of base width.

  20. Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

    International Nuclear Information System (INIS)

    Bhimnathwala, H.G.; Tyagi, S.D.; Bothra, S.; Ghandhi, S.K.; Borrego, J.M.

    1990-01-01

    Minority carrier lifetimes in the base of solar cells made in GaAs and InP are measured by open circuit voltage decay method. This paper describes the measurement technique and the conditions under which the minority carrier lifetimes can be measured. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations are measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection

  1. Surge protective device response to steep front transient in low voltage circuit

    Energy Technology Data Exchange (ETDEWEB)

    Marcuz, J.; Binczak, S.; Bilbault, J.M. [Universite de Bourgogne, Dijon (France)], Emails: jerome.marcuz@ laposte.net, stbinc@u-bourgogne.fr, bilbault@u-bourgogne.fr; Girard, F. [ADEE Electronic, Pont de Pany (France)

    2007-07-01

    Surge propagation on cables of electrical or data lines leads to a major protection problem as the number of equipment based on solid-state circuits or microprocessors increases. Sub-microsecond components of real surge waveform has to be taken into account for a proper protection even in the case of surges caused by indirect lightning effects. The response of a model of transient voltage suppressor diode based surge protection device (SPD) to fast front transient is analytically studied, then compared to simulations, including the lines connected to the SPD and to the protected equipment. (author)

  2. Optical fiber imaging for high speed plasma motion diagnostics: Applied to low voltage circuit breakers

    International Nuclear Information System (INIS)

    McBride, J. W.; Balestrero, A.; Tribulato, G.; Ghezzi, L.; Cross, K. J.

    2010-01-01

    An integrated portable measurement system is described for the study of high speed and high temperature unsteady plasma flows such as those found in the vicinity of high current switching arcs. An array of optical fibers allows the formation of low spatial resolution images, with a maximum capture rate of 1x10 6 images per second (1 MHz), with 8 bit intensity resolution. Novel software techniques are reported to allow imaging of the arc; and to measure arc trajectories. Results are presented on high current (2 kA) discharge events in a model test fixture and on the application to a commercial low voltage circuit breaker.

  3. Induced over voltage test on transformers using enhanced Z-source inverter based circuit

    Science.gov (United States)

    Peter, Geno; Sherine, Anli

    2017-09-01

    The normal life of a transformer is well above 25 years. The economical operation of the distribution system has its roots in the equipments being used. The economy being such, that it is financially advantageous to replace transformers with more than 15 years of service in the second perennial market. Testing of transformer is required, as its an indication of the extent to which a transformer can comply with the customers specified requirements and the respective standards (IEC 60076-3). In this paper, induced over voltage testing on transformers using enhanced Z source inverter is discussed. Power electronic circuits are now essential for a whole array of industrial electronic products. The bulky motor generator set, which is used to generate the required frequency to conduct the induced over voltage testing of transformers is nowadays replaced by static frequency converter. First conventional Z-source inverter, and second an enhanced Z source inverter is being used to generate the required voltage and frequency to test the transformer for induced over voltage test, and its characteristics is analysed.

  4. High Voltage Resistive Divider Based on Cast Microwire in Glass Insulation on 6–24 kV Alternating Current of Commercial Frequency.

    Directory of Open Access Journals (Sweden)

    Juravleov A.

    2008-12-01

    Full Text Available It is presented the analysis and description of the construction of the high voltage resistive divider on the base of cast microwire in glass insulation on 6–24 kV alternating current of commercial frequency. It is presented the procedure of compensation of frequency error during the process of fabrication of divides and results of tests of the sample model of the divider as well.

  5. Robust and Energy-Efficient Ultra-Low-Voltage Circuit Design under Timing Constraints in 65/45 nm CMOS

    Directory of Open Access Journals (Sweden)

    David Bol

    2011-01-01

    Full Text Available Ultra-low-voltage operation improves energy efficiency of logic circuits by a factor of 10×, at the expense of speed, which is acceptable for applications with low-to-medium performance requirements such as RFID, biomedical devices and wireless sensors. However, in 65/45 nm CMOS, variability and short-channel effects significantly harm robustness and timing closure of ultra-low-voltage circuits by reducing noise margins and jeopardizing gate delays. The consequent guardband on the supply voltage to meet a reasonable manufacturing yield potentially ruins energy efficiency. Moreover, high leakage currents in these technologies degrade energy efficiency in case of long stand-by periods. In this paper, we review recently published techniques to design robust and energy-efficient ultra-low-voltage circuits in 65/45 nm CMOS under relaxed yet strict timing constraints.

  6. Controlled Conjugated Backbone Twisting for an Increased Open-Circuit Voltage while Having a High Short-Circuit Current in Poly(hexylthiophene) Derivatives

    KAUST Repository

    Ko, Sangwon

    2012-03-21

    Conjugated polymers with nearly planar backbones have been the most commonly investigated materials for organic-based electronic devices. More twisted polymer backbones have been shown to achieve larger open-circuit voltages in solar cells, though with decreased short-circuit current densities. We systematically impose twists within a family of poly(hexylthiophene)s and examine their influence on the performance of polymer:fullerene bulk heterojunction (BHJ) solar cells. A simple chemical modification concerning the number and placement of alkyl side chains along the conjugated backbone is used to control the degree of backbone twisting. Density functional theory calculations were carried out on a series of oligothiophene structures to provide insights on how the sterically induced twisting influences the geometric, electronic, and optical properties. Grazing incidence X-ray scattering measurements were performed to investigate how the thin-film packing structure was affected. The open-circuit voltage and charge-transfer state energy of the polymer:fullerene BHJ solar cells increased substantially with the degree of twist induced within the conjugated backbone-due to an increase in the polymer ionization potential-while the short-circuit current decreased as a result of a larger optical gap and lower hole mobility. A controlled, moderate degree of twist along the poly(3,4-dihexyl-2,2′:5′,2′′- terthiophene) (PDHTT) conjugated backbone led to a 19% enhancement in the open-circuit voltage (0.735 V) vs poly(3-hexylthiophene)-based devices, while similar short-circuit current densities, fill factors, and hole-carrier mobilities were maintained. These factors resulted in a power conversion efficiency of 4.2% for a PDHTT:[6,6]-phenyl-C 71-butyric acid methyl ester (PC 71BM) blend solar cell without thermal annealing. This simple approach reveals a molecular design avenue to increase open-circuit voltage while retaining the short-circuit current. © 2012 American

  7. Controlled conjugated backbone twisting for an increased open-circuit voltage while having a high short-circuit current in poly(hexylthiophene) derivatives.

    Science.gov (United States)

    Ko, Sangwon; Hoke, Eric T; Pandey, Laxman; Hong, Sanghyun; Mondal, Rajib; Risko, Chad; Yi, Yuanping; Noriega, Rodrigo; McGehee, Michael D; Brédas, Jean-Luc; Salleo, Alberto; Bao, Zhenan

    2012-03-21

    Conjugated polymers with nearly planar backbones have been the most commonly investigated materials for organic-based electronic devices. More twisted polymer backbones have been shown to achieve larger open-circuit voltages in solar cells, though with decreased short-circuit current densities. We systematically impose twists within a family of poly(hexylthiophene)s and examine their influence on the performance of polymer:fullerene bulk heterojunction (BHJ) solar cells. A simple chemical modification concerning the number and placement of alkyl side chains along the conjugated backbone is used to control the degree of backbone twisting. Density functional theory calculations were carried out on a series of oligothiophene structures to provide insights on how the sterically induced twisting influences the geometric, electronic, and optical properties. Grazing incidence X-ray scattering measurements were performed to investigate how the thin-film packing structure was affected. The open-circuit voltage and charge-transfer state energy of the polymer:fullerene BHJ solar cells increased substantially with the degree of twist induced within the conjugated backbone--due to an increase in the polymer ionization potential--while the short-circuit current decreased as a result of a larger optical gap and lower hole mobility. A controlled, moderate degree of twist along the poly(3,4-dihexyl-2,2':5',2''-terthiophene) (PDHTT) conjugated backbone led to a 19% enhancement in the open-circuit voltage (0.735 V) vs poly(3-hexylthiophene)-based devices, while similar short-circuit current densities, fill factors, and hole-carrier mobilities were maintained. These factors resulted in a power conversion efficiency of 4.2% for a PDHTT:[6,6]-phenyl-C(71)-butyric acid methyl ester (PC(71)BM) blend solar cell without thermal annealing. This simple approach reveals a molecular design avenue to increase open-circuit voltage while retaining the short-circuit current.

  8. Reduced voltage losses yield 10% efficient fullerene free organic solar cells with >1 V open circuit voltages

    KAUST Repository

    Baran, D.

    2016-11-09

    Optimization of the energy levels at the donor-acceptor interface of organic solar cells has driven their efficiencies to above 10%. However, further improvements towards efficiencies comparable with inorganic solar cells remain challenging because of high recombination losses, which empirically limit the open-circuit voltage (Voc) to typically less than 1 V. Here we show that this empirical limit can be overcome using non-fullerene acceptors blended with the low band gap polymer PffBT4T-2DT leading to efficiencies approaching 10% (9.95%). We achieve Voc up to 1.12 V, which corresponds to a loss of only Eg/q - Voc = 0.5 ± 0.01 V between the optical bandgap Eg of the polymer and Voc. This high Voc is shown to be associated with the achievement of remarkably low non-geminate and non-radiative recombination losses in these devices. Suppression of non-radiative recombination implies high external electroluminescence quantum efficiencies which are orders of magnitude higher than those of equivalent devices employing fullerene acceptors. Using the balance between reduced recombination losses and good photocurrent generation efficiencies achieved experimentally as a baseline for simulations of the efficiency potential of organic solar cells, we estimate that efficiencies of up to 20% are achievable if band gaps and fill factors are further optimized. © The Royal Society of Chemistry 2016.

  9. A voltage control method for an active capacitive DC-link module with series-connected circuit

    DEFF Research Database (Denmark)

    Wang, Haoran; Wang, Huai; Blaabjerg, Frede

    2017-01-01

    Many efforts have been made to improve the performance of power electronic systems with active capacitive DC-link module in terms of power density as well as reliability. One of the attractive solution is an active capacitive DC-link with the series-connected circuit because of handling small......-rated power. However, in the existing control method of this circuit, the DC-link current of the backward-stage or forward-stage need to be sensed for extracting the ripple components, which limits the flexibility of the active DC-link module. Thus, in this paper, a voltage control method of an active...... capacitive DC-link module is proposed. Current sensor at the DC-link will be cancel from the circuit. The controller of the series-connected circuit requires internal voltage signals of the DC-link module only, making it possible to be fully independent without any additional connection to the main circuit...

  10. Electrothermal Feedback and Absorption-Induced Open-Circuit-Voltage Turnover in Solar Cells

    Science.gov (United States)

    Ullbrich, Sascha; Fischer, Axel; Tang, Zheng; Ávila, Jorge; Bolink, Henk J.; Reineke, Sebastian; Vandewal, Koen

    2018-05-01

    Solar panels easily heat up upon intense solar radiation due to excess energy dissipation of the absorbed photons or by nonradiative recombination of charge carriers. Still, photoinduced self-heating is often ignored when characterizing lab-sized samples. For light-intensity-dependent measurements of the open-circuit voltage (Suns-VO C ), allowing us to characterize the recombination mechanism, sample heating is often not considered, although almost 100% of the absorbed energy is converted into heat. Here, we show that the frequently observed stagnation or even decrease in VOC at increasingly high light intensities can be explained by considering an effective electrothermal feedback between the recombination current and the open-circuit voltage. Our analytical model fully explains the experimental data for various solar-cell technologies, comprising conventional inorganic semiconductors as well as organic and perovskite materials. Furthermore, the model can be exploited to determine the ideality factor, the effective gap, and the temperature rise from a single Suns-VOC measurement at ambient conditions.

  11. Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications

    International Nuclear Information System (INIS)

    Zhuge, Jing; Huang, Ru; Wang, Yangyuan; Verhulst, Anne S; Vandenberghe, William G; Dehaene, Wim; Groeseneken, Guido

    2011-01-01

    This paper investigates the potential of tunnel field-effect transistors (TFETs), with emphasis on short-gate TFETs, by simulation for low-power digital applications having a supply voltage lower than 0.5 V. A transient study shows that the tunneling current has a negligible contribution in charging and discharging the gate capacitance of TFETs. In spite of a higher resistance region in the short-gate TFET, the gate (dis)charging speed still meets low-voltage application requirements. A circuit analysis is performed on short-gate TFETs with different materials, such as Si, Ge and heterostructures in terms of voltage overshoot, delay, static power, energy consumption and energy delay product (EDP). These results are compared to MOSFET and full-gate TFET performance. It is concluded that short-gate heterostructure TFETs (Ge–source for nTFET, In 0.6 Ga 0.4 As–source for pTFET) are promising candidates to extend the supply voltage to lower than 0.5 V because they combine the advantage of a low Miller capacitance, due to the short-gate structures, and strong drive current in TFETs, due to the narrow bandgap material in the source. At a supply voltage of 0.4 V and for an EOT and channel length of 0.6 nm and 40 nm, respectively, a three-stage inverter chain based on short-gate heterostructure TFETs saves 40% energy consumption per cycle at the same delay and shows 60%–75% improvement of EDP at the same static power, compared to its full-gate counterpart. When compared to the MOSFET, better EDP can be achieved in the heterostructure TFET especially at low static power consumption

  12. Voltage-Controlled Floating Resistor Using DDCC

    Directory of Open Access Journals (Sweden)

    M. Kumngern

    2011-04-01

    Full Text Available This paper presents a new simple configuration to realize the voltage-controlled floating resistor, which is suitable for integrated circuit implementation. The proposed resistor is composed of three main components: MOS transistor operating in the non-saturation region, DDCC, and MOS voltage divider. The MOS transistor operating in the non-saturation region is used to configure a floating linear resistor. The DDCC and the MOS transistor voltage divider are used for canceling the nonlinear component term of MOS transistor in the non-saturation region to obtain a linear current/voltage relationship. The DDCC is employed to provide a simple summer of the circuit. This circuit offers an ease for realizing the voltage divider circuit and the temperature effect that includes in term of threshold voltage can be compensated. The proposed configuration employs only 16 MOS transistors. The performances of the proposed circuit are simulated with PSPICE to confirm the presented theory.

  13. Preparation of Power Distribution System for High Penetration of Renewable Energy Part I. Dynamic Voltage Restorer for Voltage Regulation Pat II. Distribution Circuit Modeling and Validation

    Science.gov (United States)

    Khoshkbar Sadigh, Arash

    Part I: Dynamic Voltage Restorer In the present power grids, voltage sags are recognized as a serious threat and a frequently occurring power-quality problem and have costly consequence such as sensitive loads tripping and production loss. Consequently, the demand for high power quality and voltage stability becomes a pressing issue. Dynamic voltage restorer (DVR), as a custom power device, is more effective and direct solutions for "restoring" the quality of voltage at its load-side terminals when the quality of voltage at its source-side terminals is disturbed. In the first part of this thesis, a DVR configuration with no need of bulky dc link capacitor or energy storage is proposed. This fact causes to reduce the size of the DVR and increase the reliability of the circuit. In addition, the proposed DVR topology is based on high-frequency isolation transformer resulting in the size reduction of transformer. The proposed DVR circuit, which is suitable for both low- and medium-voltage applications, is based on dc-ac converters connected in series to split the main dc link between the inputs of dc-ac converters. This feature makes it possible to use modular dc-ac converters and utilize low-voltage components in these converters whenever it is required to use DVR in medium-voltage application. The proposed configuration is tested under different conditions of load power factor and grid voltage harmonic. It has been shown that proposed DVR can compensate the voltage sag effectively and protect the sensitive loads. Following the proposition of the DVR topology, a fundamental voltage amplitude detection method which is applicable in both single/three-phase systems for DVR applications is proposed. The advantages of proposed method include application in distorted power grid with no need of any low-pass filter, precise and reliable detection, simple computation and implementation without using a phased locked loop and lookup table. The proposed method has been verified

  14. Correlation between the Open-Circuit Voltage and Charge Transfer State Energy in Organic Photovoltaic Cells.

    Science.gov (United States)

    Zou, Yunlong; Holmes, Russell J

    2015-08-26

    In order to further improve the performance of organic photovoltaic cells (OPVs), it is essential to better understand the factors that limit the open-circuit voltage (VOC). Previous work has sought to correlate the value of VOC in donor-acceptor (D-A) OPVs to the interface energy level offset (EDA). In this work, measurements of electroluminescence are used to extract the charge transfer (CT) state energy for multiple small molecule D-A pairings. The CT state as measured from electroluminescence is found to show better correlation to the maximum VOC than EDA. The difference between EDA and the CT state energy is attributed to the Coulombic binding energy of the CT state. This correlation is demonstrated explicitly by inserting an insulating spacer layer between the donor and acceptor materials, reducing the binding energy of the CT state and increasing the measured VOC. These results demonstrate a direct correlation between maximum VOC and CT state energy.

  15. CMOS circuits for electromagnetic vibration transducers interfaces for ultra-low voltage energy harvesting

    CERN Document Server

    Maurath, Dominic

    2015-01-01

    Chip-integrated power management solutions are a must for ultra-low power systems. This enables not only the optimization of innovative sensor applications. It is also essential for integration and miniaturization of energy harvesting supply strategies of portable and autonomous monitoring systems. The book particularly addresses interfaces for energy harvesting, which are the key element to connect micro transducers to energy storage elements. Main features of the book are: - A comprehensive technology and application review, basics on transducer mechanics, fundamental circuit and control design, prototyping and testing, up to sensor system supply and applications. - Novel interfacing concepts - including active rectifiers, MPPT methods for efficient tracking of DC as well as AC sources, and a fully-integrated charge pump for efficient maximum AC power tracking at sub-100µW ultra-low power levels. The chips achieve one of widest presented operational voltage range in standard CMOS technology: 0.44V to over...

  16. Stacking Orientation Mediation of Pentacene and Derivatives for High Open-Circuit Voltage Organic Solar Cells.

    Science.gov (United States)

    Chou, Chi-Ta; Lin, Chien-Hung; Tai, Yian; Liu, Chin-Hsin J; Chen, Li-Chyong; Chen, Kuei-Hsien

    2012-05-03

    In this Letter, we investigated the effect of the molecular stacking orientation on the open circuit voltage (VOC) of pentacene-based organic solar cells. Two functionalized pentacenes, namely, 6,13-diphenyl-pentacene (DP-penta) and 6,13-dibiphenyl-4-yl-pentacene (DB-penta), were utilized. Different molecular stacking orientations of the pentacene derivatives from the pristine pentacene were identified by angle-dependent near-edge X-ray absorption fine structure measurements. It is concluded that pentacene molecules stand up on the substrate surface, while both functionalized pentacenes lie down. A significant increase of the VOC from 0.28 to 0.83 V can be achieved upon the utilization of functionalized pentacene, owing to the modulation of molecular stacking orientation, which induced a vacuum-level shift.

  17. 1.5V fully programmable CMOS Membership Function Generator Circuit with proportional DC-voltage control

    Directory of Open Access Journals (Sweden)

    C. Muñiz-Montero

    2013-06-01

    Full Text Available A Membership Function Generator Circuit (MFGC with bias supply of 1.5 Volts and independent DC-voltage programmable functionalities is presented. The realization is based on a programmable differential current mirror and three compact voltage-to-current converters, allowing continuous and quasi-linear adjustment of the center position, height, width and slopes of the triangular/trapezoidal output waveforms. HSPICE simulation results of the proposed circuit using the parameters of a double-poly, three metal layers, 0.5 μm CMOS technology validate the functionality of the proposed architecture, which exhibits a maximum deviation of the linearity in the programmability of 7 %.

  18. Origin of Reduced Open-Circuit Voltage in Highly Efficient Small-Molecule-Based Solar Cells upon Solvent Vapor Annealing.

    Science.gov (United States)

    Deng, Wanyuan; Gao, Ke; Yan, Jun; Liang, Quanbin; Xie, Yuan; He, Zhicai; Wu, Hongbin; Peng, Xiaobin; Cao, Yong

    2018-03-07

    In this study, we demonstrate that remarkably reduced open-circuit voltage in highly efficient organic solar cells (OSCs) from a blend of phenyl-C 61 -butyric acid methyl ester and a recently developed conjugated small molecule (DPPEZnP-THD) upon solvent vapor annealing (SVA) is due to two independent sources: increased radiative recombination and increased nonradiative recombination. Through the measurements of electroluminescence due to the emission of the charge-transfer state and photovoltaic external quantum efficiency measurement, we can quantify that the open-circuit voltage losses in a device with SVA due to the radiative recombination and nonradiative recombination are 0.23 and 0.31 V, respectively, which are 0.04 and 0.07 V higher than those of the as-cast device. Despite of the reduced open-circuit voltage, the device with SVA exhibited enhanced dissociation of charge-transfer excitons, leading to an improved short-circuit current density and a remarkable power conversion efficiency (PCE) of 9.41%, one of the best for solution-processed OSCs based on small-molecule donor materials. Our study also clearly shows that removing the nonradiative recombination pathways and/or suppressing energetic disorder in the active layer would result in more long-lived charge carriers and enhanced open-circuit voltage, which are prerequisites for further improving the PCE.

  19. Fuzzy Diagnostic System for Oleo-Pneumatic Drive Mechanism of High-Voltage Circuit Breakers

    Directory of Open Access Journals (Sweden)

    Viorel Nicolau

    2013-01-01

    Full Text Available Many oil-based high-voltage circuit breakers are still in use in national power networks of developing countries, like those in Eastern Europe. Changing these breakers with new more reliable ones is not an easy task, due to their implementing costs. The acting device, called oleo-pneumatic mechanism (MOP, presents the highest fault rate from all components of circuit breaker. Therefore, online predictive diagnosis and early detection of the MOP fault tendencies are very important for their good functioning state. In this paper, fuzzy logic approach is used for the diagnosis of MOP-type drive mechanisms. Expert rules are generated to estimate the MOP functioning state, and a fuzzy system is proposed for predictive diagnosis. The fuzzy inputs give information about the number of starts and time of functioning per hour, in terms of short-term components, and their mean values. Several fuzzy systems were generated, using different sets of membership functions and rule bases, and their output performances are studied. Simulation results are presented based on an input data set, which contains hourly records of operating points for a time horizon of five years. The fuzzy systems work well, making an early detection of the MOP fault tendencies.

  20. Open circuit voltage durability study and model of catalyst coated membranes at different humidification levels

    Energy Technology Data Exchange (ETDEWEB)

    Kundu, Sumit; Fowler, Michael W.; Simon, Leonardo C. [Department of Chemical Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario (Canada); Abouatallah, Rami; Beydokhti, Natasha [Hydrogenics Corporation, 5985 McLaughlin Road, Mississauga, Ontario (Canada)

    2010-11-01

    Fuel cell material durability is an area of extensive research today. Chemical degradation of the ionomer membrane is one important degradation mechanism leading to overall failure of fuel cells. This study examined the effects of relative humidity on the chemical degradation of the membrane during open circuit voltage testing. Five Gore trademark PRIMEA {sup registered} series 5510 catalyst coated membranes were degraded at 100%, 75%, 50%, and 20% RH. Open circuit potential and cumulative fluoride release were monitored over time. Additionally scanning electron microscopy images were taken at end of the test. The results showed that with decreasing RH fluoride release rate increased as did performance degradation. This was attributed to an increase in gas crossover with a decrease in RH. Further, it is also shown that interruptions in testing may heavily influence cumulative fluoride release measurements where frequent stoppages in testing will cause fluoride release to be underestimated. SEM analysis shows that degradation occurred in the ionomer layer close to the cathode catalyst. A chemical degradation model of the ionomer membrane was used to model the results. The model was able to predict fluoride release trends, including the effects of interruptions, showing that changes in gas crossover with RH could explain the experimental results. (author)

  1. Molecular understanding of the open-circuit voltage of polymer: Fullerene solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Shunsuke; Orimo, Akiko; Benten, Hiroaki; Ito, Shinzaburo [Department of Polymer Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo, Kyoto (Japan); Ohkita, Hideo [Japan Science and Technology Agency (JST), PRESTO, Saitama (Japan); Department of Polymer Chemistry, Graduate School of Engineering, Kyoto University, Katsura, Nishikyo, Kyoto (Japan)

    2012-02-15

    The origin of open-circuit voltage (V{sub OC}) was studied for polymer solar cells based on a blend of poly(3-hexylthiophene) (P3HT) and seven fullerene derivatives with different LUMO energy levels and side chains. The temperature dependence of J-V characteristics was analyzed by an equivalent circuit model. As a result, V{sub OC} increased with the decrease in the saturation current density J{sub 0} of the device. Furthermore, J{sub 0} was dependent on the activation energy E{sub A} for J{sub 0}, which is related to the HOMO-LUMO energy gap between P3HT and fullerene. Interestingly, the pre-exponential term J{sub 00} for J{sub 0} was larger for pristine fullerenes than for substituted fullerene derivatives, suggesting that the electronic coupling between molecules also has substantial impact on V{sub OC}. This is probably because the recombination is non-diffusion-limited reaction depending on electron transfer at the P3HT/fullerene interface. In summary, the origin of V{sub OC} is ascribed not only to the relative HOMO-LUMO energy gap but also to the electronic couplings between fullerene/fullerene and polymer/fullerene. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Ultra high open circuit voltage (>1 V) of poly-3-hexylthiophene based organic solar cells with concentrated light

    DEFF Research Database (Denmark)

    Tromholt, Thomas; Madsen, Morten Vesterager; Krebs, Frederik C

    2013-01-01

    to 2000 solar intensities of these photoactive blends. Comparison of solar cells based on five different fullerene derivatives shows that at both short circuit and open circuit conditions, recombination remains unchanged up to 50 suns. Determination of Voc at 2000 suns demonstrated that the same......One approach to increasing polymer solar cell efficiency is to blend poly-(3-hexyl-thiophene) with poorly electron accepting fullerene derivatives to obtain higher open circuit voltage (Voc). In this letter concentrated light is used to study the electrical properties of cell operation at up...

  3. Nanosecond pulsed electric fields (nsPEFs) low cost generator design using power MOSFET and Cockcroft-Walton multiplier circuit as high voltage DC source

    International Nuclear Information System (INIS)

    Sulaeman, M. Y.; Widita, R.

    2014-01-01

    Purpose: Non-ionizing radiation therapy for cancer using pulsed electric field with high intensity field has become an interesting field new research topic. A new method using nanosecond pulsed electric fields (nsPEFs) offers a novel means to treat cancer. Not like the conventional electroporation, nsPEFs able to create nanopores in all membranes of the cell, including membrane in cell organelles, like mitochondria and nucleus. NsPEFs will promote cell death in several cell types, including cancer cell by apoptosis mechanism. NsPEFs will use pulse with intensity of electric field higher than conventional electroporation, between 20–100 kV/cm and with shorter duration of pulse than conventional electroporation. NsPEFs requires a generator to produce high voltage pulse and to achieve high intensity electric field with proper pulse width. However, manufacturing cost for creating generator that generates a high voltage with short duration for nsPEFs purposes is highly expensive. Hence, the aim of this research is to obtain the low cost generator design that is able to produce a high voltage pulse with nanosecond width and will be used for nsPEFs purposes. Method: Cockcroft-Walton multiplier circuit will boost the input of 220 volt AC into high voltage DC around 1500 volt and it will be combined by a series of power MOSFET as a fast switch to obtain a high voltage with nanosecond pulse width. The motivation using Cockcroft-Walton multiplier is to acquire a low-cost high voltage DC generator; it will use capacitors and diodes arranged like a step. Power MOSFET connected in series is used as voltage divider to share the high voltage in order not to damage them. Results: This design is expected to acquire a low-cost generator that can achieve the high voltage pulse in amount of −1.5 kV with falltime 3 ns and risetime 15 ns into a 50Ω load that will be used for nsPEFs purposes. Further detailed on the circuit design will be explained at presentation

  4. Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis

    International Nuclear Information System (INIS)

    Yun, J; Shim, J-I; Shin, D-S

    2013-01-01

    We demonstrate a modeling method based on the three-dimensional electrical and thermal circuit analysis to extract current, voltage and temperature distributions of light-emitting diodes (LEDs). In our model, the electrical circuit analysis is performed first to extract the current and voltage distributions in the LED. Utilizing the result obtained from the electrical circuit analysis as distributed heat sources, the thermal circuit is set up by using the duality between Fourier's law and Ohm's law. From the analysis of the thermal circuit, the temperature distribution at each epitaxial film is successfully obtained. Comparisons of experimental and simulation results are made by employing an InGaN/GaN multiple-quantum-well blue LED. Validity of the electrical circuit analysis is confirmed by comparing the light distribution at the surface. Since the temperature distribution at each epitaxial film cannot be obtained experimentally, the apparent temperature distribution is compared at the surface of the LED chip. Also, experimentally obtained average junction temperature is compared with the value calculated from the modeling, yielding a very good agreement. The analysis method based on the circuit modeling has an advantage of taking distributed heat sources as inputs, which is essential for high-power devices with significant self-heating. (paper)

  5. Design of a Rad-Hard eFuse Trimming Circuit for Bandgap Voltage Reference for LHC Experiments Upgrades

    CERN Document Server

    Besirli, Mustafa; Koukab, Adil; Michelis, Stefano

    A precise and stable reference voltage is required to generate a stable output voltage in DC/DC converters. This reference voltage must be independent of temperature, power supply, radiation, intrinsic technology mismatch and process variation. This master's thesis reports the development of a rad-hard bandgap voltage reference with electrical fuse (eFuse) based analog calibration circuit in a commercial 130nm technology. According to the test results, the maximum error in the bandgap voltage (300mV in this application) was reduced from ±30mV to less than ±0.6mV thanks to the eFuse trimming. A temperature, power supply, radiation, mismatch and process-independent reference voltage was generated to provide reference voltage to first (bPOL12V) and second (bPOL2V5) stage DC/DC converters. This circuit will be integrated in bPOL12V and bPOL2V5 converters for high-luminosity LHC upgrades.

  6. On-chip active gate bias circuit for MMIC amplifier applications with 100% threshold voltage variation compensation

    NARCIS (Netherlands)

    Hek, A.P. de; Busking, E.B.

    2006-01-01

    In this paper the design and performance of an on-chip active gate bias circuit for application in MMIC amplifiers, which gives 100% compensation for threshold variation and at the same time is insensitive to supply voltage variations, is discussed. Design equations have been given. In addition, the

  7. Transient Recovery Voltages at the Main 132kV Line Bay GIS Circuit Breaker in a Windfarm

    DEFF Research Database (Denmark)

    Arana Aristi, Iván; Okholm, J.; Holbøll, Joachim

    2011-01-01

    This paper presents the results of investigations of the Transient Recovery Voltage (TRV) across the terminals of the main 132kV Line Bay GIS circuit breaker (GIS CB) for Walney 2, second phase of the Walney Offshore Wind Farm. Several simulations were performed where the influence of different...

  8. Interface Modification of Dye-sensitized Solar Cells with Pivalic Acid to Enhance the Open-circuit Voltage

    KAUST Repository

    Li, Xin

    2009-01-01

    Pivalic acid (PVA) was used as a new coadsorbent to dye-sensitized solar cells (DSCs) to modify the interface between the TiO2 films and electrolyte. The addition of PVA improved the light-to-electricity conversion efficiency of devices by 8% by enhancing the open-circuit voltage. Copyright © 2009 The Chemical Society of Japan.

  9. Transient analysis of the output short-circuit fault of high power and high voltage DC power supply

    International Nuclear Information System (INIS)

    Yang Zhigang; Zhang Jian; Huang Yiyun; Hao Xu; Sun Haozhang; Guo Fei

    2014-01-01

    The transient conditions of output short-circuit fault of high voltage DC power supply was introduced, and the energy of power supply injecting into klystron during the protection process of three-electrode gas switch were analyzed and calculated in detail when klystron load happening electrode arc faults. The results of calculation and simulation are consistent with the results of the experiment. When the output short-circuit fault of high voltage power supply occurs, switch can be shut off in the microsecond, and the short circuit current can be controlled in 200 A. It has verified the rapidity and reliability of the three-electrode gas switch protection, and it has engineering application value. (authors)

  10. Symmetry-Breaking Charge Transfer in a Zinc Chlorodipyrrin Acceptor for High Open Circuit Voltage Organic Photovoltaics

    KAUST Repository

    Bartynski, Andrew N.

    2015-04-29

    © 2015 American Chemical Society. Low open-circuit voltages significantly limit the power conversion efficiency of organic photovoltaic devices. Typical strategies to enhance the open-circuit voltage involve tuning the HOMO and LUMO positions of the donor (D) and acceptor (A), respectively, to increase the interfacial energy gap or to tailor the donor or acceptor structure at the D/A interface. Here, we present an alternative approach to improve the open-circuit voltage through the use of a zinc chlorodipyrrin, ZCl [bis(dodecachloro-5-mesityldipyrrinato)zinc], as an acceptor, which undergoes symmetry-breaking charge transfer (CT) at the donor/acceptor interface. DBP/ZCl cells exhibit open-circuit voltages of 1.33 V compared to 0.88 V for analogous tetraphenyldibenzoperyflanthrene (DBP)/C60-based devices. Charge transfer state energies measured by Fourier-transform photocurrent spectroscopy and electroluminescence show that C60 forms a CT state of 1.45 ± 0.05 eV in a DBP/C60-based organic photovoltaic device, while ZCl as acceptor gives a CT state energy of 1.70 ± 0.05 eV in the corresponding device structure. In the ZCl device this results in an energetic loss between ECT and qVOC of 0.37 eV, substantially less than the 0.6 eV typically observed for organic systems and equal to the recombination losses seen in high-efficiency Si and GaAs devices. The substantial increase in open-circuit voltage and reduction in recombination losses for devices utilizing ZCl demonstrate the great promise of symmetry-breaking charge transfer in organic photovoltaic devices.

  11. Voltage-probe-position dependence and magnetic-flux contribution to the measured voltage in ac transport measurements: which measuring circuit determines the real losses?

    International Nuclear Information System (INIS)

    Pe, T.; McDonald, J.; Clem, J.R.

    1995-01-01

    The voltage V ab measured between two voltage taps a and b during magnetic flux transport in a type-II superconductor carrying current I is the sum of two contributions, the line integral from a to b of the electric field along an arbitrary path C s through the superconductor and a term proportional to the time rate of change of magnetic flux through the area bounded by the path C s and the measuring circuit leads. When the current I(t) is oscillating with time t, the apparent ac loss (the time average of the product IV ab ) depends upon the measuring circuit used. Only when the measuring-circuit leads are brought out far from the surface does the apparent power dissipation approach the real (or true) ac loss associated with the length of sample probed. Calculations showing comparisons between the apparent and real ac losses in a flat strip of rectangular cross section will be presented, showing the behavior as a function of the measuring-circuit dimensions. Corresponding calculations also are presented for a sample of elliptical cross section

  12. Design and test of component circuits of an integrated quantum voltage noise source for Johnson noise thermometry

    Science.gov (United States)

    Yamada, Takahiro; Maezawa, Masaaki; Urano, Chiharu

    2015-11-01

    We present design and testing of a pseudo-random number generator (PRNG) and a variable pulse number multiplier (VPNM) which are digital circuit subsystems in an integrated quantum voltage noise source for Jonson noise thermometry. Well-defined, calculable pseudo-random patterns of single flux quantum pulses are synthesized with the PRNG and multiplied digitally with the VPNM. The circuit implementation on rapid single flux quantum technology required practical circuit scales and bias currents, 279 junctions and 33 mA for the PRNG, and 1677 junctions and 218 mA for the VPNM. We confirmed the circuit operation with sufficiently wide margins, 80-120%, with respect to the designed bias currents.

  13. Simulation and Experimental Study of Arc Column Expansion After Ignition in Low-Voltage Circuit Breakers

    Institute of Scientific and Technical Information of China (English)

    MA Qiang; RONG Mingzhe; WU Yi; XU Tiejun; SUN Zhiqiang

    2008-01-01

    The dynamicprocess of arc pressure and corresponding arc column expansion, which is the main feature after arc ignition and has a significant effect on the breaking behaviour of low -voltage circuit breakers, is studied. By constructing a three dimensional mathematical model of air arc plasma and adopting the Control Volume Method, the parameters of arc plasma including temperature and pressure axe obtained. The variations of pressure field and temperature field with time are simulated. The result indicates that there are six stages for the process of arc column expansion according to the variation of pressure in arc chamber. In the first stage, the maximal pressure locates in the region close to cathode, and in the second stage the maximal pressure shifts to the region close to the anode. In the third stage, the pressure difference between the middle of arc column and the ambient gas is very large, so the arc column begins to expand apparently. In the fourth stage, the pressure wave propagates towards both ends and the maximal pressure appears at the two ends when the pressure wave reaches both sidewalls. In the fifth stage, the pressure wave is reflected and collides in the middle of the arc chamber. In the last stage, the propagation and reflection of pressure wave will repeat several times until a steady burning state is reached. In addition, the experimental results of arc column expansion, corresponding to the arc pressure variation, are presented to verify the simulation results.

  14. Elevated voltage level I.sub.DDQ failure testing of integrated circuits

    Science.gov (United States)

    Righter, Alan W.

    1996-01-01

    Burn in testing of static CMOS IC's is eliminated by I.sub.DDQ testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip.

  15. Elevated voltage level I{sub DDQ} failure testing of integrated circuits

    Science.gov (United States)

    Righter, A.W.

    1996-05-21

    Burn in testing of static CMOS IC`s is eliminated by I{sub DDQ} testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip. 4 figs.

  16. Design and test of component circuits of an integrated quantum voltage noise source for Johnson noise thermometry

    International Nuclear Information System (INIS)

    Yamada, Takahiro; Maezawa, Masaaki; Urano, Chiharu

    2015-01-01

    Highlights: • We demonstrated RSFQ digital components of a new quantum voltage noise source. • A pseudo-random number generator and variable pulse number multiplier are designed. • Fabrication process is based on four Nb wiring layers and Nb/AlOx/Nb junctions. • The circuits successfully operated with wide dc bias current margins, 80–120%. - Abstract: We present design and testing of a pseudo-random number generator (PRNG) and a variable pulse number multiplier (VPNM) which are digital circuit subsystems in an integrated quantum voltage noise source for Jonson noise thermometry. Well-defined, calculable pseudo-random patterns of single flux quantum pulses are synthesized with the PRNG and multiplied digitally with the VPNM. The circuit implementation on rapid single flux quantum technology required practical circuit scales and bias currents, 279 junctions and 33 mA for the PRNG, and 1677 junctions and 218 mA for the VPNM. We confirmed the circuit operation with sufficiently wide margins, 80–120%, with respect to the designed bias currents.

  17. Design and test of component circuits of an integrated quantum voltage noise source for Johnson noise thermometry

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Takahiro, E-mail: yamada-takahiro@aist.go.jp [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568 (Japan); Maezawa, Masaaki [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568 (Japan); Urano, Chiharu [National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Central 3, Umezono 1-1-1, Tsukuba, Ibaraki 305-8563 (Japan)

    2015-11-15

    Highlights: • We demonstrated RSFQ digital components of a new quantum voltage noise source. • A pseudo-random number generator and variable pulse number multiplier are designed. • Fabrication process is based on four Nb wiring layers and Nb/AlOx/Nb junctions. • The circuits successfully operated with wide dc bias current margins, 80–120%. - Abstract: We present design and testing of a pseudo-random number generator (PRNG) and a variable pulse number multiplier (VPNM) which are digital circuit subsystems in an integrated quantum voltage noise source for Jonson noise thermometry. Well-defined, calculable pseudo-random patterns of single flux quantum pulses are synthesized with the PRNG and multiplied digitally with the VPNM. The circuit implementation on rapid single flux quantum technology required practical circuit scales and bias currents, 279 junctions and 33 mA for the PRNG, and 1677 junctions and 218 mA for the VPNM. We confirmed the circuit operation with sufficiently wide margins, 80–120%, with respect to the designed bias currents.

  18. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

    Science.gov (United States)

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-05-09

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

  19. Effect of nano-imprinting on open-circuit voltage of organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Emah, J.B.; Curry, R.J.; Silva, S.R.P. [Surrey Univ., Guildford (United Kingdom). Advanced Technology Inst.

    2010-07-01

    The open-circuit voltage (V{sub oc}) of solar cells with non-Ohmic contacts are determined by the work function difference of the electrodes. For Ohmic contacts the V{sub oc} is governed by the LUMO and HOMO levels of the acceptor and donor, respectively, which pin the Fermi levels of the cathode and anode. We present a case where the V{sub oc} of a single layer device using poly (3-hexylthiopene-2,5-diyl) (P3HT) as the photoactive material between a nanoimprinted poly poly (3,4-ethylenedioxythiophene) poly (styrene sulfonate)(PEDOT:PSS) and Al electrode decreases due to patterning. The reverse is shown to be the case when [6,6]-phenyl-C{sub 61}-butyric acid ester (PCBM) is introduced to form a bulk heterojunction (BHJ). In both scenarios, there is an increase in the short-circuit current, attributed to an extended optical path length within the photoactive layer and enhanced charge extraction through the increased surface area. The patterned BHJ devices show a 28% and 40% increase in the power conversion efficiency when imprinted with 727 nm and 340 nm periodic patterns respectively. ATR-FTIR investigations of the interfacial PEDOT:PSS film following patterning reveals the presence of PDMS residue which is supported by consideration of the effect on single layer P3HT and P3HT:PCBM blend device performance. UPS measurements demonstrate a reduction in the work function of the interfacial PEDOT:OSS layer by {proportional_to}0.5 eV following nanoimprinting which may originate from chemical modification by the PDMS residue or interfacial dipole formation. XPS spectrum of the imprinted PEDOT:PSS also shows a chemical shift in the 0(1s) core-level towards higher binding energy signifying interaction of the PDMS stamp residue with the PSS dominated surface of PEDOT:PSS. This led to significant improvement in the V{sub oc} and ultimately, the PCE. (orig.)

  20. Tesla’s high voltage and high frequency generators with oscillatory circuits

    Directory of Open Access Journals (Sweden)

    Cvetić Jovan M.

    2016-01-01

    Full Text Available The principles that represent the basics of the work of the high voltage and high frequency generator with oscillating circuits will be discussed. Until 1891, Tesla made and used mechanical generators with a large number of extruded poles for the frequencies up to about 20 kHz. The first electric generators based on a new principle of a weakly coupled oscillatory circuits he used for the wireless signal transmission, for the study of the discharges in vacuum tubes, the wireless energy transmission, for the production of the cathode rays, that is x-rays and other experiments. Aiming to transfer the signals and the energy to any point of the surface of the Earth, in the late of 19th century, he had discovered and later patented a new type of high frequency generator called a magnifying transmitter. He used it to examine the propagation of electromagnetic waves over the surface of the Earth in experiments in Colorado Springs in the period 1899-1900. Tesla observed the formation of standing electromagnetic waves on the surface of the Earth by measuring radiated electric field from distant lightning thunderstorm. He got the idea to generate the similar radiation to produce the standing waves. On the one hand, signal transmission, i.e. communication at great distances would be possible and on the other hand, with more powerful and with at least three magnifying transmitters the wireless transmission of energy without conductors at any point of the Earth surface could also be achieved. The discovery of the standing waves on the surface of the Earth and the invention of the magnifying transmitter he claimed his greatest inventions. Less than two years later, at the end of 1901, he designed and started to build a much stronger magnifying transmitter on Long Island near New York City (the Wardenclyffe tower wishing to become a world telecommunication center. During the tower construction, he elaborated the plans for an even stronger transmitter based on

  1. A new generation of medium-voltage switchboards and circuit-breakers; Eine neue Generation von Mittelspannungsschaltanlagen und -leistungsschaltern

    Energy Technology Data Exchange (ETDEWEB)

    Saemann, D.; Weichert, R.; Werner, S. [Siemens AG, Erlangen (Germany). Bereich Energieuebertragung und -verteilung

    1998-04-06

    Todays market and the trend towards globalization of business both call for new products. The authors describe the new generation of medium-voltage switchgears and circuit-breakers, along with the benefit they bring for customers. (orig./RHM) [Deutsch] Der Markt und die Globalisierung des Geschaeftes fordern neue Produkte. Die Verfasser beschreiben die neue Generation von Mittelspannungsschaltanlagen und -schaltern sowie deren Nutzen fuer die Anwender. (orig./RHM)

  2. The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

    Science.gov (United States)

    Weizer, V. G.; Godlewski, M. P.

    1984-01-01

    It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.

  3. Experimental investigation of open circuit voltage during start-up process of HT-PEMFC

    International Nuclear Information System (INIS)

    Abdul Rasheed, Raj Kamal; Chan, Siew Hwa

    2015-01-01

    Highlights: • OCV reduces non-linearly with temperature under constant power input. • The reduction gradient of OCV is observed to be non-linear with time. • Nernst equation is less accurate for HT-PEMFC start-up models. - Abstract: This paper investigates the open circuit voltage (OCV) during the warm-up process of a high temperature proton exchange membrane fuel cell (HT-PEMFC) from 140 °C to the desired temperature of 180 °C, where the temperature increases with time. The heating strategy involves the external heating of the fuel cell with constant heat input rate. The commonly used Nernst equation, to predict the OCV of the fuel cell, is usually used in transient start-up models. Thus, this papers highlights the limitations of using the Nernst equation where the temperature increases transiently with time. A polybenzimidazole-based HTPEM single cell was set up and the OCV was measured under constant heating power supplied by an external source. A parametric study was done by varying the external heating power and the effect on the OCV was observed. The results showed that the OCV reduces non-linearly with respect to temperature, when the fuel cell is subjected to a constant heating power. This behaviour is clearly in contrast with the Nernst equation, which considers the temperature as steady state. For effective comparison, the OCV was also measured under steady state temperatures, showing an almost constant reduction gradient of ∼ −2.3×10 −4 V/°C. However, the behaviour under a constant heating power show curvilinear reduction of the OCV as the temperature increases. In addition, as the external heating power is increased, the degree of curvature of the OCV profile is greater. Thus, the results clearly indicate that the accuracy of using the Nernst equation in transient thermal start-up models can be improved, by considering a non linear behaviour, as shown in this paper.

  4. Guanidinium: A Route to Enhanced Carrier Lifetime and Open-Circuit Voltage in Hybrid Perovskite Solar Cells.

    Science.gov (United States)

    De Marco, Nicholas; Zhou, Huanping; Chen, Qi; Sun, Pengyu; Liu, Zonghao; Meng, Lei; Yao, En-Ping; Liu, Yongsheng; Schiffer, Andy; Yang, Yang

    2016-02-10

    Hybrid perovskites have shown astonishing power conversion efficiencies owed to their remarkable absorber characteristics including long carrier lifetimes, and a relatively substantial defect tolerance for solution-processed polycrystalline films. However, nonradiative charge carrier recombination at grain boundaries limits open circuit voltages and consequent performance improvements of perovskite solar cells. Here we address such recombination pathways and demonstrate a passivation effect through guanidinium-based additives to achieve extraordinarily enhanced carrier lifetimes and higher obtainable open circuit voltages. Time-resolved photoluminescence measurements yield carrier lifetimes in guanidinium-based films an order of magnitude greater than pure-methylammonium counterparts, giving rise to higher device open circuit voltages and power conversion efficiencies exceeding 17%. A reduction in defect activation energy of over 30% calculated via admittance spectroscopy and confocal fluorescence intensity mapping indicates successful passivation of recombination/trap centers at grain boundaries. We speculate that guanidinium ions serve to suppress formation of iodide vacancies and passivate under-coordinated iodine species at grain boundaries and within the bulk through their hydrogen bonding capability. These results present a simple method for suppressing nonradiative carrier loss in hybrid perovskites to further improve performances toward highly efficient solar cells.

  5. The importance of band tail recombination on current collection and open-circuit voltage in CZTSSe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Moore, James E. [Naval Research Laboratory, Washington, DC 20375 (United States); Purdue University, West Lafayette, Indiana 47907 (United States); Hages, Charles J. [Purdue University, West Lafayette, Indiana 47907 (United States); Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Agrawal, Rakesh; Lundstrom, Mark S.; Gray, Jeffery L. [Purdue University, West Lafayette, Indiana 47907 (United States)

    2016-07-11

    Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) solar cells typically exhibit high short-circuit current density (J{sub sc}), but have reduced cell efficiencies relative to other thin film technologies due to a deficit in the open-circuit voltage (V{sub oc}), which prevent these devices from becoming commercially competitive. Recent research has attributed the low V{sub oc} in CZTSSe devices to small scale disorder that creates band tail states within the absorber band gap, but the physical processes responsible for this V{sub oc} reduction have not been elucidated. In this paper, we show that carrier recombination through non-mobile band tail states has a strong voltage dependence and is a significant performance-limiting factor, and including these effects in simulation allows us to simultaneously explain the V{sub oc} deficit, reduced fill factor, and voltage-dependent quantum efficiency with a self-consistent set of material parameters. Comparisons of numerical simulations to measured data show that reasonable values for the band tail parameters (characteristic energy, capture rate) can account for the observed low V{sub oc}, high J{sub sc}, and voltage dependent collection efficiency. These results provide additional evidence that the presence of band tail states accounts for the low efficiencies of CZTSSe solar cells and further demonstrates that recombination through non-mobile band tail states is the dominant efficiency limiting mechanism.

  6. A High-Voltage Integrated Circuit Engine for a Dielectrophoresis-based Programmable Micro-Fluidic Processor

    Science.gov (United States)

    Current, K. Wayne; Yuk, Kelvin; McConaghy, Charles; Gascoyne, Peter R. C.; Schwartz, Jon A.; Vykoukal, Jody V.; Andrews, Craig

    2010-01-01

    A high-voltage (HV) integrated circuit has been demonstrated to transport droplets on programmable paths across its coated surface. This chip is the engine for a dielectrophoresis (DEP)-based micro-fluidic lab-on-a-chip system. This chip creates DEP forces that move and help inject droplets. Electrode excitation voltage and frequency are variable. With the electrodes driven with a 100V peak-to-peak periodic waveform, the maximum high-voltage electrode waveform frequency is about 200Hz. Data communication rate is variable up to 250kHz. This demonstration chip has a 32×32 array of nominally 100V electrode drivers. It is fabricated in a 130V SOI CMOS fabrication technology, dissipates a maximum of 1.87W, and is about 10.4 mm × 8.2 mm. PMID:23989241

  7. Study on Factors for Accurate Open Circuit Voltage Characterizations in Mn-Type Li-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Natthawuth Somakettarin

    2017-03-01

    Full Text Available Open circuit voltage (OCV of lithium batteries has been of interest since the battery management system (BMS requires an accurate knowledge of the voltage characteristics of any Li-ion batteries. This article presents an OCV characteristic for lithium manganese oxide (LMO batteries under several experimental operating conditions, and discusses factors for accurate OCV determination. A test system is developed for OCV characterization based on the OCV pulse test method. Various factors for the OCV behavior, such as resting period, step-size of the pulse test, testing current amplitude, hysteresis phenomena, and terminal voltage relationship, are investigated and evaluated. To this end, a general OCV model based on state of charge (SOC tracking is developed and validated with satisfactory results.

  8. Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

    Science.gov (United States)

    Jain, Raj K.; Flood, Dennis J.

    1990-01-01

    Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

  9. Simple Cell Balance Circuit

    Science.gov (United States)

    Johnson, Steven D.; Byers, Jerry W.; Martin, James A.

    2012-01-01

    A method has been developed for continuous cell voltage balancing for rechargeable batteries (e.g. lithium ion batteries). A resistor divider chain is provided that generates a set of voltages representing the ideal cell voltage (the voltage of each cell should be as if the cells were perfectly balanced). An operational amplifier circuit with an added current buffer stage generates the ideal voltage with a very high degree of accuracy, using the concept of negative feedback. The ideal voltages are each connected to the corresponding cell through a current- limiting resistance. Over time, having the cell connected to the ideal voltage provides a balancing current that moves the cell voltage very close to that ideal level. In effect, it adjusts the current of each cell during charging, discharging, and standby periods to force the cell voltages to be equal to the ideal voltages generated by the resistor divider. The device also includes solid-state switches that disconnect the circuit from the battery so that it will not discharge the battery during storage. This solution requires relatively few parts and is, therefore, of lower cost and of increased reliability due to the fewer failure modes. Additionally, this design uses very little power. A preliminary model predicts a power usage of 0.18 W for an 8-cell battery. This approach is applicable to a wide range of battery capacities and voltages.

  10. Analog Circuit Design Low Voltage Low Power; Short Range Wireless Front-Ends; Power Management and DC-DC

    CERN Document Server

    Roermund, Arthur; Baschirotto, Andrea

    2012-01-01

    The book contains the contribution of 18 tutorials of the 20th workshop on Advances in Analog Circuit Design.  Each part discusses a specific to-date topic on new and valuable design ideas in the area of analog circuit design. Each part is presented by six experts in that field and state of the art information is shared and overviewed. This book is number 20 in this successful series of Analog Circuit Design, providing valuable information and excellent overviews of Low-Voltage Low-Power Data Converters - Chaired by Prof. Anderea Baschirotto, University of Milan-Bicocca Short Range Wireless Front-Ends - Chaired by Prof. Arthur van Roermund, Eindhoven University of Technology Power management and DC-DC - Chaired by Prof. M. Steyaert, Katholieke University Leuven Analog Circuit Design is an essential reference source for analog circuit designers and researchers wishing to keep abreast with the latest development in the field. The tutorial coverage also makes it suitable for use in an advanced design.

  11. The principle of elaboration of the relay protection against short circuits between the closely placed phases of high voltage electrical line

    Directory of Open Access Journals (Sweden)

    Kiorsak M.

    2015-12-01

    Full Text Available The article is devoted to the elaboration of the principle of relay protection against short circuits between the closely placed phases of higher voltage electrical line with self-compensation, based on the six phase’s symmetrical components. It is shown that the unsymmetrical short circuits between the closely placed phases are characterized by appearance of zero and tertiary sequences of symmetrical components. This fact can be used to choose them for relay protection. The electrical basic circuits and formulas for calculation of the passive parameters of zero and tertiary filters of currents (voltages are done. It is presented the structural-functional basic circuit scheme for relay protection against short circuits between the closely placed phases of higher voltage electrical line with self-compensation.

  12. Module Five: Relationships of Current, Voltage, and Resistance; Basic Electricity and Electronics Individualized Learning System.

    Science.gov (United States)

    Bureau of Naval Personnel, Washington, DC.

    This module covers the relationships between current and voltage; resistance in a series circuit; how to determine the values of current, voltage, resistance, and power in resistive series circuits; the effects of source internal resistance; and an introduction to the troubleshooting of series circuits. This module is divided into five lessons:…

  13. Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

    Science.gov (United States)

    Wang, Huiliang; Wei, Peng; Li, Yaoxuan; Han, Jeff; Lee, Hye Ryoung; Naab, Benjamin D.; Liu, Nan; Wang, Chenggong; Adijanto, Eric; Tee, Benjamin C.-K.; Morishita, Satoshi; Li, Qiaochu; Gao, Yongli; Cui, Yi; Bao, Zhenan

    2014-01-01

    Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. Here, we report a facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives processed via either solution coating or vacuum deposition. The threshold voltages of our polythiophene-sorted SWNT thin-film transistors can be tuned accurately and continuously over a wide range. Photoelectron spectroscopy measurements confirmed that the SWNT Fermi level shifted to the conduction band edge with increasing doping concentration. Using this doping approach, we proceeded to fabricate SWNT complementary inverters by inkjet printing of the dopants. We observed an unprecedented noise margin of 28 V at VDD = 80 V (70% of 1/2VDD) and a gain of 85. Additionally, robust SWNT complementary metal−oxide−semiconductor inverter (noise margin 72% of 1/2VDD) and logic gates with rail-to-rail output voltage swing and subnanowatt power consumption were fabricated onto a highly flexible substrate. PMID:24639537

  14. Re-evaluating the role of sterics and electronic coupling in determining the open-circuit voltage of organic solar cells

    KAUST Repository

    Graham, Kenneth; Erwin, Patrick; Nordlund, Dennis; Vandewal, Koen; Li, Ruipeng; Ngongang Ndjawa, Guy Olivier; Hoke, Eric T.; Salleo, Alberto; Thompson, Mark E.; McGehee, Michael D.; Amassian, Aram

    2013-01-01

    The effects of sterics and molecular orientation on the open-circuit voltage and absorbance properties of charge-transfer states are explored in model bilayer organic photovoltaics. It is shown that the open-circuit voltage correlates linearly with the charge-transfer state energy and is not significantly influenced by electronic coupling. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Re-evaluating the role of sterics and electronic coupling in determining the open-circuit voltage of organic solar cells

    KAUST Repository

    Graham, Kenneth

    2013-07-30

    The effects of sterics and molecular orientation on the open-circuit voltage and absorbance properties of charge-transfer states are explored in model bilayer organic photovoltaics. It is shown that the open-circuit voltage correlates linearly with the charge-transfer state energy and is not significantly influenced by electronic coupling. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Circuit-field coupled finite element analysis method for an electromagnetic acoustic transducer under pulsed voltage excitation

    International Nuclear Information System (INIS)

    Hao Kuan-Sheng; Huang Song-Ling; Zhao Wei; Wang Shen

    2011-01-01

    This paper presents an analytical method for electromagnetic acoustic transducers (EMATs) under voltage excitation and considers the non-uniform distribution of the biased magnetic field. A complete model of EMATs including the non-uniform biased magnetic field, a pulsed eddy current field and the acoustic field is built up. The pulsed voltage excitation is transformed to the frequency domain by fast Fourier transformation (FFT). In terms of the time harmonic field equations of the EMAT system, the impedances of the coils under different frequencies are calculated according to the circuit-field coupling method and Poynting's theorem. Then the currents under different frequencies are calculated according to Ohm's law and the pulsed current excitation is obtained by inverse fast Fourier transformation (IFFT). Lastly, the sequentially coupled finite element method (FEM) is used to calculate the Lorentz force in the EMATs under the current excitation. An actual EMAT with a two-layer two-bundle printed circuit board (PCB) coil, a rectangular permanent magnet and an aluminium specimen is analysed. The coil impedances and the pulsed current are calculated and compared with the experimental results. Their agreement verified the validity of the proposed method. Furthermore, the influences of lift-off distances and the non-uniform static magnetic field on the Lorentz force under pulsed voltage excitation are studied. (interdisciplinary physics and related areas of science and technology)

  17. A novel voltage clamp circuit for the measurement of transistor dynamic on-resistance

    NARCIS (Netherlands)

    Gelagaev, R.; Jacqmaer, P.; Everts, J.; Driesen, Johan

    2012-01-01

    For determining the dynamic on-resistance Rdyn,on of a power transistor, the voltage and current waveforms have to be measured during the switching operation. In measurements of voltage waveforms, using an oscilloscope, the characteristics of an amplifier inside the oscilloscope are distorted when

  18. Comparative Study of Online Open Circuit Voltage Estimation Techniques for State of Charge Estimation of Lithium-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Hicham Chaoui

    2017-04-01

    Full Text Available Online estimation techniques are extensively used to determine the parameters of various uncertain dynamic systems. In this paper, online estimation of the open-circuit voltage (OCV of lithium-ion batteries is proposed by two different adaptive filtering methods (i.e., recursive least square, RLS, and least mean square, LMS, along with an adaptive observer. The proposed techniques use the battery’s terminal voltage and current to estimate the OCV, which is correlated to the state of charge (SOC. Experimental results highlight the effectiveness of the proposed methods in online estimation at different charge/discharge conditions and temperatures. The comparative study illustrates the advantages and limitations of each online estimation method.

  19. Correlation between LUMO offset of donor/acceptor molecules to an open circuit voltage in bulk heterojunction solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Mola, Genene Tessema, E-mail: mola@ukzn.ac.za [School of. Chemistry and Physics, University of Kwazulu-Natal, Pietermaritzburg Campus, Private Bag X01, Scottsville 3209 (South Africa); Abera, Newayemedhin [Addis Ababa University, Department of Physics, P.O. BOX 1176, Addis Ababa (Ethiopia)

    2014-07-15

    The correlation between the open circuit voltage and the LUMO offset of the donor and acceptor polymers in the bulkheterojunction solar cell was studied for three different thiophene derivatives. The HOMO levels of all the polymers in this investigation were chosen to be similar which results in close values of ΔE{sub DA}=E{sub HOMO}{sup D}−E{sub LUMO}{sup A}. However, the measured V{sub oc} was found to be increasing with decreasing value of the LUMO offset that exists between the donor polymer and fullerene.

  20. Current regulators for I/SUP 2/L circuits to be operated from low-voltage power supplies

    DEFF Research Database (Denmark)

    Bruun, Erik; Hansen, Ole

    1980-01-01

    A new bandgap current reference is described which can be used to control the injector current of I/SUP 2/L circuits for supply voltages down to about 1 V. For small currents the total injector current is obtained as a mirror of the reference current. For large injector currents the current control......, but well controlled temperature coefficient is desired. It is shown how a temperature stable ring oscillator with I/SUP 2/L gates can be constructed by tailoring the temperature dependence of the supply current appropriately....

  1. Control of a Two-Stage Direct Power Converter with a Single Voltage Sensor Mounted in the Intermediary Circuit

    DEFF Research Database (Denmark)

    Klumpner, Christian; Wheeler, P.; Blaabjerg, Frede

    2004-01-01

    Controlling a converter requires not only a powerful processors but also accurate voltage and current sensors and fast and precise analogue-digital converters, which increase the cost per kW of the assembly, especially in the low power range. A matrix converter requires less transducers than a back...... converters but in two stages (AC/DC/AC) without using energy storage in the intermediary circuit. They also offer the possibility to reduce the number of switches compared to the standard single-stage matrix converter. This paper presents a new method to control a two-stage DPC providing sine-wave in sine...

  2. Control strategy and hardware implementation for DC–DC boost power circuit based on proportional–integral compensator for high voltage application

    Directory of Open Access Journals (Sweden)

    Sanjeevikumar Padmanaban

    2015-06-01

    Full Text Available For high-voltage (HV applications, the designers mostly prefer the classical DC–DC boost converter. However, it lacks due to the limitation of the output voltage by the gain transfer ratio, decreased efficiency and its requirement of two sensors for feedback signals, which creates complex control scheme with increased overall cost. Furthermore, the output voltage and efficiency are reduced due to the self-parasitic behavior of power circuit components. To overcome these drawbacks, this manuscript provides, the theoretical development and hardware implementation of DC–DC step-up (boost power converter circuit for obtaining extra output-voltage high-performance. The proposed circuit substantially improves the high output-voltage by voltage-lift technology with a closed loop proportional–integral controller. This complete numerical model of the converter circuit including closed loop P-I controller is developed in simulation (Matlab/Simulink software and the hardware prototype model is implemented with digital signal processor (DSP TMS320F2812. A detailed performance analysis was carried out under both line and load regulation conditions. Numerical simulation and its verification results provided in this paper, prove the good agreement of the circuit with theoretical background.

  3. Achieving 12.8% Efficiency by Simultaneously Improving Open-Circuit Voltage and Short-Circuit Current Density in Tandem Organic Solar Cells.

    Science.gov (United States)

    Qin, Yunpeng; Chen, Yu; Cui, Yong; Zhang, Shaoqing; Yao, Huifeng; Huang, Jiang; Li, Wanning; Zheng, Zhong; Hou, Jianhui

    2017-06-01

    Tandem organic solar cells (TOSCs), which integrate multiple organic photovoltaic layers with complementary absorption in series, have been proved to be a strong contender in organic photovoltaic depending on their advantages in harvesting a greater part of the solar spectrum and more efficient photon utilization than traditional single-junction organic solar cells. However, simultaneously improving open circuit voltage (V oc ) and short current density (J sc ) is a still particularly tricky issue for highly efficient TOSCs. In this work, by employing the low-bandgap nonfullerene acceptor, IEICO, into the rear cell to extend absorption, and meanwhile introducing PBDD4T-2F into the front cell for improving V oc , an impressive efficiency of 12.8% has been achieved in well-designed TOSC. This result is also one of the highest efficiencies reported in state-of-the-art organic solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Design and flight performance evaluation of the Mariners 6, 7, and 9 short-circuit current, open-circuit voltage transducers

    Science.gov (United States)

    Patterson, R. E.

    1973-01-01

    The purpose of the short-circuit voltage transducer is to provide engineering data to aid the evaluation of array performance during flight. The design, fabrication, calibration, and in-flight performance of the transducers onboard the Mariner 6, 7 and 9 spacecrafts are described. No significant differences were observed in the in-flight electrical performance of the three transducers. The transducers did experience significant losses due to coverslides or adhesive darkening, increased surface reflection, or spectral shifts within coverslide assembly. Mariner 6, 7 and 9 transducers showed non-cell current degradations of 3-1/2%, 3%, and 4%, respectively at Mars encounter and 6%, 3%, and 4-12%, respectively at end of mission. Mariner 9 solar Array Test 2 showed 3-12% current degradation while the transducer showed 4-12% degradation.

  5. Interface band gap narrowing behind open circuit voltage losses in Cu2ZnSnS4 solar cells

    DEFF Research Database (Denmark)

    Crovetto, Andrea; Palsgaard, Mattias Lau Nøhr; Gunst, Tue

    2017-01-01

    We present evidence that bandgap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu2ZnSnS4/CdS solar cells. Bandgap narrowing is caused by surface states that extend the Cu2ZnSnS4valence band into the forbidden gap. Those surface states...... are consistently found in Cu2ZnSnS4, but not in Cu2ZnSnSe4, by first-principles calculations. They do not simply arise from defects at surfaces but are an intrinsic feature of Cu2ZnSnS4 surfaces. By including those states in a device model, the outcome of previously published temperature-dependent open circuit...... voltage measurements on Cu2ZnSnS4 solar cells can be reproduced quantitatively without necessarily assuming a cliff-like conduction band offset with the CdS buffer layer. Our first-principles calculations indicate that Zn-based alternative buffer layers are advantageous due to the ability of...

  6. Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production

    Directory of Open Access Journals (Sweden)

    F. Urbain

    2014-01-01

    Full Text Available Hydrogenated amorphous silicon thin film tandem solar cells (a-Si:H/a-Si:H have been developed with focus on high open-circuit voltages for the direct application as photocathodes in photoelectrochemical water splitting devices. By temperature variation during deposition of the intrinsic a-Si:H absorber layers the band gap energy of a-Si:H absorber layers, correlating with the hydrogen content of the material, can be adjusted and combined in a way that a-Si:H/a-Si:H tandem solar cells provide open-circuit voltages up to 1.87 V. The applicability of the tandem solar cells as photocathodes was investigated in a photoelectrochemical cell (PEC measurement set-up. With platinum as a catalyst, the a-Si:H/a-Si:H based photocathodes exhibit a high photocurrent onset potential of 1.76 V versus the reversible hydrogen electrode (RHE and a photocurrent of 5.3 mA/cm2 at 0 V versus RHE (under halogen lamp illumination. Our results provide evidence that a direct application of thin film silicon based photocathodes fulfills the main thermodynamic requirements to generate hydrogen. Furthermore, the presented approach may provide an efficient and low-cost route to solar hydrogen production.

  7. Energy-level alignment and open-circuit voltage at graphene/polymer interfaces: theory and experiment

    Science.gov (United States)

    Noori, Keian; Konios, Dimitrios; Stylianakis, Minas M.; Kymakis, Emmanuel; Giustino, Feliciano

    2016-03-01

    Functionalized graphene promises to become a key component of novel solar cell architectures, owing to its versatile ability to act either as transparent conductor, electron acceptor, or buffer layer. In spite of this promise, the solar energy conversion efficiency of graphene-based devices falls short of the performance of competing solution-processable photovoltaic technologies. Here we address the question of the maximum achievable open-circuit voltage of all-organic graphene: polymer solar cells using a combined theoretical/experimental approach, going from the atomic scale level to the device level. Our calculations on very large atomistic models of the graphene/polymer interface indicate that the ideal open-circuit voltage approaches one volt, and that epoxide functional groups can have a dramatic effect on the photovoltage. Our predictions are confirmed by direct measurements on complete devices where we control the concentration of functional groups via chemical reduction. Our findings indicate that the selective removal of epoxide groups and the use of ultradisperse polymers are key to achieving graphene solar cells with improved energy conversion efficiency.

  8. Prediction Model and Principle of End-of-Life Threshold for Lithium Ion Batteries Based on Open Circuit Voltage Drifts

    International Nuclear Information System (INIS)

    Cui, Yingzhi; Yang, Jie; Du, Chunyu; Zuo, Pengjian; Gao, Yunzhi; Cheng, Xinqun; Ma, Yulin; Yin, Geping

    2017-01-01

    Highlights: •Open circuit voltage evolution over ageing of lithium ion batteries is deciphered. •The mechanism responsible for the end-of-life (EOL) threshold is elaborated. •A new prediction model of EOL threshold with improved accuracy is developed. •This EOL prediction model is promising for the applications in electric vehicles. -- Abstract: The end-of-life (EOL) of a lithium ion battery (LIB) is defined as the time point when the LIB can no longer provide sufficient power or energy to accomplish its intended function. Generally, the EOL occurs abruptly when the degradation of a LIB reaches the threshold. Therefore, current prediction methods of EOL by extrapolating the early degradation behavior often result in significant errors. To address this problem, this paper analyzes the reason for the EOL threshold of a LIB with shallow depth of discharge. It is found that the sudden appearance of EOL threshold results from the drift of open circuit voltage (OCV) at the end of both shallow depth and full discharges. Further, a new EOL threshold prediction model with highly improved accuracy is developed based on the OCV drifts and their evolution mechanism, which can effectively avoid the misjudgment of EOL threshold. The accuracy of this EOL threshold prediction model is verified by comparing with experimental results. The EOL threshold prediction model can be applied to other battery chemistry systems and its possible application in electric vehicles is finally discussed.

  9. Effect of solar-cell junction geometry on open-circuit voltage

    Science.gov (United States)

    Weizer, V. G.; Godlewski, M. P.

    1985-01-01

    Simple analytical models have been found that adequately describe the voltage behavior of both the stripe junction and dot junction grating cells as a function of junction area. While the voltage in the former case is found to be insensitive to junction area reduction, significant voltage increases are shown to be possible for the dot junction cell. With regard to cells in which the junction area has been increased in a quest for better performance, it was found that (1) texturation does not affect the average saturation current density J0, indicating that the texturation process is equivalent to a simple extension of junction area by a factor of square root of 3 and (2) the vertical junction cell geometry produces a sizable decrease in J0 that, unfortunately, is more than offset by the effects of attendant areal increases.

  10. High performance low voltage organic field effect transistors on plastic substrate for amplifier circuits

    NARCIS (Netherlands)

    Houin, G.J.R.; Duez, F.; Garcia, L.; Cantatore, E.; Torricelli, F.; Hirsch, L.; Belot, D.; Pellet, C.; Abbas, M.

    2016-01-01

    The high performance air stable organic semiconductor small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was chosen as active layer for field effect transistors built to realize flexible amplifier circuits. Initial device on rigid Si/SiO2 substrate showed appreciable performance

  11. Fault Modeling and Testing for Analog Circuits in Complex Space Based on Supply Current and Output Voltage

    Directory of Open Access Journals (Sweden)

    Hongzhi Hu

    2015-01-01

    Full Text Available This paper deals with the modeling of fault for analog circuits. A two-dimensional (2D fault model is first proposed based on collaborative analysis of supply current and output voltage. This model is a family of circle loci on the complex plane, and it simplifies greatly the algorithms for test point selection and potential fault simulations, which are primary difficulties in fault diagnosis of analog circuits. Furthermore, in order to reduce the difficulty of fault location, an improved fault model in three-dimensional (3D complex space is proposed, which achieves a far better fault detection ratio (FDR against measurement error and parametric tolerance. To address the problem of fault masking in both 2D and 3D fault models, this paper proposes an effective design for testability (DFT method. By adding redundant bypassing-components in the circuit under test (CUT, this method achieves excellent fault isolation ratio (FIR in ambiguity group isolation. The efficacy of the proposed model and testing method is validated through experimental results provided in this paper.

  12. Robust Sequential Circuits Design Technique for Low Voltage and High Noise Scenarios

    Directory of Open Access Journals (Sweden)

    Garcia-Leyva Lancelot

    2016-01-01

    In this paper we introduce an innovative input and output data redundancy principle for sequential block circuits, the responsible to keep the state of the system, showing its efficiency in front of other robust technique approaches. The methodology is totally different from the Von Neumann approaches, because element are not replicated N times, but instead, they check the coherence of redundant input data no allowing data propagation in case of discrepancy. This mechanism does not require voting devices.

  13. IGZO TFT-based circuit with tunable threshold voltage by laser annealing

    Science.gov (United States)

    Huang, Xiaoming; Yu, Guang; Wu, Chenfei

    2017-11-01

    In this work, a high-performance inverter based on amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) has been fabricated, which consists of a driver TFT and a load TFT. The threshold voltage (Vth) of the load TFT can be tuned by applying an area-selective laser annealing. The transfer curve of the load TFT shows a parallel shift into the negative bias direction upon laser annealing. Based on x-ray photoelectron spectroscopy analyses, the negative Vth shift can be attributed to the increase of oxygen vacancy concentration within the device channel upon laser irradiation. Compared to the untreated inverter, the laser annealed inverter shows much improved switching characteristics, including a large output swing range which is close to full swing, as well as an enhanced output voltage gain. Furthermore, the dynamic performance of ring oscillator based on the laser-annealed inverter is improved.

  14. Modification of Modulating Anode Voltage Supply of Klystron for PEFP 20 MeV Linac

    International Nuclear Information System (INIS)

    Kim, Dae Il; Kwon, Hyeok Jung; Kim, Han Sung; Cho, Yong Sub

    2011-01-01

    The klystron (TH2089F, THALES) for PEFP 20MeV proton linear accelerator has a triode type electron gun and the modulating anode voltage should be supplied. The klystron has gone through some modification in the modulating anode voltage supply circuit. Formerly, the mod-anode voltage was supplied by using the tetrode-controlled voltage divider. This system requires addition power supply for the tetrode and the grid control circuit. Recently we modified the mod-anode supply from the tetrode-controlled voltage divider to a resistive voltage divider. The resistors for the previous voltage divider were installed at a supporter with high voltage bushing structure next to the klystron. In the previous system, the resistors were exposed to the air and their size was very bulky, length of which was about 1m long. To reduce the space occupied by the voltage divider and to improve the electrical insulation performance, the voltage dividing resistors were moved into the oil tank of the klystron. During the operation of the 20 MeV linac, the klystron parameters were measured. In this paper, the modification of the voltage divider and the operational characteristics of the klystron with modified voltage divider circuit are presented

  15. Enhanced Open-Circuit Voltage in Colloidal Quantum Dot Photovoltaics via Reactivity-Controlled Solution-Phase Ligand Exchange

    KAUST Repository

    Jo, Jea Woong; Kim, Younghoon; Choi, Jongmin; de Arquer, F. Pelayo Garcí a; Walters, Grant; Sun, Bin; Ouellette, Olivier; Kim, Junghwan; Proppe, Andrew H.; Quintero-Bermudez, Rafael; Fan, James; Xu, Jixian; Tan, Chih Shan; Voznyy, Oleksandr; Sargent, Edward H.

    2017-01-01

    The energy disorder that arises from colloidal quantum dot (CQD) polydispersity limits the open-circuit voltage (VOC) and efficiency of CQD photovoltaics. This energy broadening is significantly deteriorated today during CQD ligand exchange and film assembly. Here, a new solution-phase ligand exchange that, via judicious incorporation of reactivity-engineered additives, provides improved monodispersity in final CQD films is reported. It has been found that increasing the concentration of the less reactive species prevents CQD fusion and etching. As a result, CQD solar cells with a VOC of 0.7 V (vs 0.61 V for the control) for CQD films with exciton peak at 1.28 eV and a power conversion efficiency of 10.9% (vs 10.1% for the control) is achieved.

  16. Enhanced Open-Circuit Voltage in Colloidal Quantum Dot Photovoltaics via Reactivity-Controlled Solution-Phase Ligand Exchange

    KAUST Repository

    Jo, Jea Woong

    2017-10-09

    The energy disorder that arises from colloidal quantum dot (CQD) polydispersity limits the open-circuit voltage (VOC) and efficiency of CQD photovoltaics. This energy broadening is significantly deteriorated today during CQD ligand exchange and film assembly. Here, a new solution-phase ligand exchange that, via judicious incorporation of reactivity-engineered additives, provides improved monodispersity in final CQD films is reported. It has been found that increasing the concentration of the less reactive species prevents CQD fusion and etching. As a result, CQD solar cells with a VOC of 0.7 V (vs 0.61 V for the control) for CQD films with exciton peak at 1.28 eV and a power conversion efficiency of 10.9% (vs 10.1% for the control) is achieved.

  17. Influence of a MoOx interlayer on the open-circuit voltage in organic photovoltaic cells

    Science.gov (United States)

    Zou, Yunlong; Holmes, Russell J.

    2013-07-01

    Metal-oxides have been used as interlayers at the anode-organic interface in organic photovoltaic cells (OPVs) to increase the open-circuit voltage (VOC). We examine the role of MoOx in determining the maximum VOC in a planar heterojunction OPV and find that the interlayer strongly affects the temperature dependence of VOC. Boron subphthalocyanine chloride (SubPc)-C60 OPVs that contain no interlayer show a maximum VOC of 1.2 V at low temperature, while those with MoOx show no saturation, reaching VOC > 1.4 V. We propose that the MoOx-SubPc interface forms a Schottky junction that provides an additional contribution to VOC at low temperature.

  18. Enhanced Open-Circuit Voltage in Visible Quantum Dot Photovoltaics by Engineering of Carrier-Collecting Electrodes

    KAUST Repository

    Wang, Xihua

    2011-10-26

    Colloidal quantum dots (CQDs) enable multijunction solar cells using a single material programmed using the quantum size effect. Here we report the systematic engineering of 1.6 eV PbS CQD solar cells, optimal as the front cell responsible for visible-wavelength harvesting in tandem photovoltaics. We rationally optimize each of the device\\'s collecting electrodes-the heterointerface with electron-accepting TiO2 and the deep-work-function hole-collecting MoO3 for ohmic contact-for maximum efficiency. We report an open-circuit voltage of 0.70 V, the highest observed in a colloidal quantum dot solar cell operating at room temperature. We report an AM1.5 solar power conversion efficiency of 3.5%, the highest observed in >1.5 eV bandgap CQD PV device. © 2011 American Chemical Society.

  19. Evidence of Gate Voltage Oscillations during Short Circuit of Commercial 1.7 kV/ 1 kA IGBT Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Wu, Rui; Iannuzzo, Francesco

    2015-01-01

    This paper analyzes the evidence of critical gate voltage oscillations in 1.7 kV/1 kA Insulated-Gate Bipolar Transistor (IGBT) power modules under short circuit conditions. A 6 kA/1.1 kV Non-Destructive Test (NDT) set up for repeatable short circuit tests has been built with a 40 nH stray inducta...

  20. Numerical Study on Open-Circuit Voltage of Single Layer Organic Solar Cells with Schottky Contacts: Effects of Molecular Energy Levels, Temperature and Thickness

    International Nuclear Information System (INIS)

    Rong-Hua, Li; Ying-Quan, Peng; Chao-Zhu, Ma; Run-Sheng, Wang; Hong-Wei, Xie; Ying, Wang; Wei-Min, Meng

    2010-01-01

    We numerically investigate the effects of the exciton generation rate G, temperature T, the active layer thickness d and the position of LUMO level E L related to the cathode work function W c at a given energy gap on the open-circuit voltage V oc of single layer organic solar cells with Schottky contact. It is demonstrated that open-circuit voltage increases concomitantly with the decreasing cathode work function W c for given anode work functions and exciton generation rates. In the case of given cathode and anode work functions, the open-circuit voltage first increases with the exciton generation rate and then reaches a saturation value, which equals to the built-in voltage. Additionally, it is worth noting that a significant improvement to V oc could be made by selecting an organic material which has a relative high LUMO level (low |E L | value). However, V oc decreases as the temperature increases, and the decreasing rate reduces with the enhancement of exciton generation rate. Our study also shows that it is of no benefit to improve the open-circuit voltage by increasing the device thickness because of an enhanced charge recombination in thicker devices. (cross-disciplinary physics and related areas of science and technology)

  1. Microstructural and Electronic Origins of Open-Circuit Voltage Tuning in Organic Solar Cells Based on Ternary Blends

    KAUST Repository

    Mollinger, Sonya A.

    2015-09-22

    © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Organic ternary heterojunction photovoltaic blends are sometimes observed to undergo a gradual evolution in open-circuit voltage (Voc) with increasing amounts of a second donor or an acceptor. The Voc is strongly correlated with the energy of the charge transfer state in the blend, but this value depends on both local and mesoscopic orders. In this work, the behavior of Voc in the presence of a wide range of interfacial electronic states is investigated. The key charge transfer state interfaces responsible for Voc in several model systems with varying morphology are identified. Systems consisting of one donor with two fullerene molecules and of one acceptor with a donor polymer of varying regio-regularity are used. The effects from the changing energetic disorder in the material and from the variation due to a law of simple mixtures are quantified. It has been found that populating the higher-energy charge transfer states is not responsible for the observed change in Voc upon the addition of a third component. Aggregating polymers and miscible fullerenes are compared, and it has been concluded that in both cases charge delocalization, aggregation, and local polarization effects shift the lowest-energy charge transfer state distribution. The open-circuit voltage evolution and charge transfer state interfaces in ternary organic photovoltaic blends are investigated using several model systems. The changes in subgap spectra from energetic disorder and increased population of higher energy states are analyzed and the lowest charge transfer state distribution is observed to shift due to local aggregation and delocalization effects.

  2. Influence of different open circuit voltage tests on state of charge online estimation for lithium-ion batteries

    International Nuclear Information System (INIS)

    Zheng, Fangdan; Xing, Yinjiao; Jiang, Jiuchun; Sun, Bingxiang; Kim, Jonghoon; Pecht, Michael

    2016-01-01

    Highlights: • Two common tests for observing battery open circuit voltage performance are compared. • The temperature dependency of the OCV-SOC relationship is investigated. • Two estimators are evaluated in terms of accuracy and robustness for estimating battery SOC. • The incremental OCV test is better to predetermine the OCV-SOCs for SOC online estimation. - Abstract: Battery state of charge (SOC) estimation is a crucial function of battery management systems (BMSs), since accurate estimated SOC is critical to ensure the safety and reliability of electric vehicles. A widely used technique for SOC estimation is based on online inference of battery open circuit voltage (OCV). Low-current OCV and incremental OCV tests are two common methods to observe the OCV-SOC relationship, which is an important element of the SOC estimation technique. In this paper, two OCV tests are run at three different temperatures and based on which, two SOC estimators are compared and evaluated in terms of tracking accuracy, convergence time, and robustness for online estimating battery SOC. The temperature dependency of the OCV-SOC relationship is investigated and its influence on SOC estimation results is discussed. In addition, four dynamic tests are presented, one for estimator parameter identification and the other three for estimator performance evaluation. The comparison results show that estimator 2 (based on the incremental OCV test) has higher tracking accuracy and is more robust against varied loading conditions and different initial values of SOC than estimator 1 (based on the low-current OCV test) with regard to ambient temperature. Therefore, the incremental OCV test is recommended for predetermining the OCV-SOCs for battery SOC online estimation in BMSs.

  3. Microstructural and Electronic Origins of Open-Circuit Voltage Tuning in Organic Solar Cells Based on Ternary Blends

    KAUST Repository

    Mollinger, Sonya A.; Vandewal, Koen; Salleo, Alberto

    2015-01-01

    © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Organic ternary heterojunction photovoltaic blends are sometimes observed to undergo a gradual evolution in open-circuit voltage (Voc) with increasing amounts of a second donor or an acceptor. The Voc is strongly correlated with the energy of the charge transfer state in the blend, but this value depends on both local and mesoscopic orders. In this work, the behavior of Voc in the presence of a wide range of interfacial electronic states is investigated. The key charge transfer state interfaces responsible for Voc in several model systems with varying morphology are identified. Systems consisting of one donor with two fullerene molecules and of one acceptor with a donor polymer of varying regio-regularity are used. The effects from the changing energetic disorder in the material and from the variation due to a law of simple mixtures are quantified. It has been found that populating the higher-energy charge transfer states is not responsible for the observed change in Voc upon the addition of a third component. Aggregating polymers and miscible fullerenes are compared, and it has been concluded that in both cases charge delocalization, aggregation, and local polarization effects shift the lowest-energy charge transfer state distribution. The open-circuit voltage evolution and charge transfer state interfaces in ternary organic photovoltaic blends are investigated using several model systems. The changes in subgap spectra from energetic disorder and increased population of higher energy states are analyzed and the lowest charge transfer state distribution is observed to shift due to local aggregation and delocalization effects.

  4. Four-quadrant speed control circuit of DC servo motor using integrated voltage control method; Den`atsu sekibunchi seigyo wo mochoiita chokuryu dendoki no shishogen sokudo seigyo

    Energy Technology Data Exchange (ETDEWEB)

    Okui, H. [Osaka polytechnic College, Osaka (Japan); Irie, H. [Osaka Electro-Communication Univ., Osaka (Japan)

    1996-08-20

    The Two-Quadrant chopper is constructed by using smoothing reactor in common of the step-down chopper and step-up chopper of the DC chopper. Furthermore, since the circuit connected in bridge type by using these two groups has both of positive and negative voltage from DC source and can supplies the current from positive and negative directions for load, it is called in general as the Four-Quadrant chopper. As the Four-Quadrant chopper may supply and regenerate power, it works as power amplifier with high efficiency. In this paper, the speed control circuit of DC servo motor using Four-Quadrant integrated voltage control circuit is described. The speed control circuit is composed of simple circuits of one adder integrator and four hysteresis comparators. The Four-Quadrant speed control circuit has a DC motor speed feedback loop and a voltage feedback loop which connects with AC, it plays the Four-Quadrant speed control without current inspection. The speed control characteristics with no steady state error over four quadrants may be obtained, changing of the quadrant is smooth and transition response is rapid. 9 refs., 11 figs.

  5. Recombination in polymer:Fullerene solar cells with open-circuit voltages approaching and exceeding 1.0 V

    KAUST Repository

    Hoke, Eric T.

    2012-09-14

    Polymer:fullerene solar cells are demonstrated with power conversion efficiencies over 7% with blends of PBDTTPD and PC 61 BM. These devices achieve open-circuit voltages ( V oc ) of 0.945 V and internal quantum efficiencies of 88%, making them an ideal candidate for the large bandgap junction in tandem solar cells. V oc \\'s above 1.0 V are obtained when the polymer is blended with multiadduct fullerenes; however, the photocurrent and fill factor are greatly reduced. In PBDTTPD blends with multiadduct fullerene ICBA, fullerene emission is observed in the photoluminescence and electroluminescence spectra, indicating that excitons are recombining on ICBA. Voltage-dependent, steady state and time-resolved photoluminescence measurements indicate that energy transfer occurs from PBDTTPD to ICBA and that back hole transfer from ICBA to PBDTTPD is inefficient. By analyzing the absorption and emission spectra from fullerene and charge transfer excitons, we estimate a driving free energy of -0.14 ± 0.06 eV is required for efficient hole transfer. These results suggest that the driving force for hole transfer may be too small for efficient current generation in polymer:fullerene solar cells with V oc values above 1.0 V and that non-fullerene acceptor materials with large optical gaps ( > 1.7 eV) may be required to achieve both near unity internal quantum efficiencies and values of V oc exceeding 1.0 V. © 2013 WILEY-VCH Verlag GmbH and Co.

  6. Technical-economic evaluation of the utilization of closing resistor in CEMIG extra-high voltage circuit breakers

    Energy Technology Data Exchange (ETDEWEB)

    Rocha, Angelica C.O.; Pinto, Roberto del Giudice R.; Teixeira, Jose Cleber; Fonseca, Rodrigo Assuncao; F, Junior, Sebastiao V [Companhia Energetica de Minas Gerais (CEMIG), Belo Horizonte, MG (Brazil)

    1994-12-31

    This paper presents the technical and economic studies performed by CEMIG, Companhia Energetica de Minas Gerais, Brazil, concerning the use of closing resistor in its extra-high voltage (EHV) breakers. The analysis emphasizes the advantages which could be achieved with the elimination of the resistor as far as costs and reliability are concerned. This evaluation was motivated by two 500 kV breaker failures resulting from the breakdown of the closing resistor operation mechanism. These occurrences resulted in operative restriction for CEMIG EHV system. The analysis demanded a review of the capability criteria of silicon carbide (Si C) gap arresters, which are still greatly used in CEMIG EHV System, and of the procedures to be applied when carrying out the transient studies. The investigation resulted in the prompt removal of closing resistors from circuit breakers in CEMIG extra-high voltage system generating an economy of approximately U$ 840,00 and an improvement in safety and system reliability. (author) 13 refs., 4 figs., 1 tab.

  7. Recombination in polymer:Fullerene solar cells with open-circuit voltages approaching and exceeding 1.0 V

    KAUST Repository

    Hoke, Eric T.; Vandewal, Koen; Bartelt, Jonathan A.; Mateker, William R.; Douglas, Jessica D.; Noriega, Rodrigo; Graham, Kenneth; Frechet, Jean; Salleo, Alberto; McGehee, Michael D.

    2012-01-01

    Polymer:fullerene solar cells are demonstrated with power conversion efficiencies over 7% with blends of PBDTTPD and PC 61 BM. These devices achieve open-circuit voltages ( V oc ) of 0.945 V and internal quantum efficiencies of 88%, making them an ideal candidate for the large bandgap junction in tandem solar cells. V oc 's above 1.0 V are obtained when the polymer is blended with multiadduct fullerenes; however, the photocurrent and fill factor are greatly reduced. In PBDTTPD blends with multiadduct fullerene ICBA, fullerene emission is observed in the photoluminescence and electroluminescence spectra, indicating that excitons are recombining on ICBA. Voltage-dependent, steady state and time-resolved photoluminescence measurements indicate that energy transfer occurs from PBDTTPD to ICBA and that back hole transfer from ICBA to PBDTTPD is inefficient. By analyzing the absorption and emission spectra from fullerene and charge transfer excitons, we estimate a driving free energy of -0.14 ± 0.06 eV is required for efficient hole transfer. These results suggest that the driving force for hole transfer may be too small for efficient current generation in polymer:fullerene solar cells with V oc values above 1.0 V and that non-fullerene acceptor materials with large optical gaps ( > 1.7 eV) may be required to achieve both near unity internal quantum efficiencies and values of V oc exceeding 1.0 V. © 2013 WILEY-VCH Verlag GmbH and Co.

  8. Analyses of the impact of connections’ layout on the coil transient voltage at the Quench Protection Circuit intervention in JT-60SA

    International Nuclear Information System (INIS)

    Maistrello, Alberto; Gaio, Elena; Novello, Luca; Matsukawa, Makoto; Yamauchi, Kunihito

    2015-01-01

    The transient overvoltages associated to the interruption of high direct currents with high current derivative, at the base of the operation of a Quench Protection System for Superconducting Coils, have been studied, with particular reference to the JT-60SA project, which adopt edge technology solutions for current interruption: a Hybrid mechanical-static Circuit Breaker as main circuit breaker in series with a PyroBreaker as backup protection. The paper reports in particular on the analyses of the intervention of the backup circuit breaker in the final circuital conditions, considering the actual power connections that will be implemented on Site. The key elements which influence the peak value of the voltage and the relation existing among the different stray impedances of the circuit are identified, thus giving general guidelines for the design of the layout of the power connections. The specific case of JT-60SA is considered, but general criteria can be derived.

  9. Investigation of the dielectric recovery in synthetic air in a high voltage circuit breaker

    International Nuclear Information System (INIS)

    Seeger, M; Naidis, G; Steffens, A; Nordborg, H; Claessens, M

    2005-01-01

    The dielectric recovery of an axially blown arc in an experimental set-up based on a conventional HV circuit breaker was investigated both experimentally and theoretically. As a quenching gas, synthetic air was used. The investigated time range was from 10 μs to 10 ms after current zero (CZ). A fast rise in the dielectric strength during the first 100 μs, followed by a plateau and further rise later was observed. The dependences on the breaking current and pressure were determined. The measured dielectric recovery during the first 100 μs after CZ could be reproduced with good accuracy by computational fluid dynamics simulations. From that it could be deduced that the temperature decay in the axis does not depend sensitively on the pressure. The dielectric recovery during the first 100 μs scales therefore mainly with the filling pressure. The plateau in the breakdown characteristic is due to a hot vapour layer from the still evaporating PTFE nozzle surface

  10. Enhancing Linearity of Voltage Controlled Oscillator Thermistor Signal Conditioning Circuit Using Linear Search

    Science.gov (United States)

    Rana, K. P. S.; Kumar, Vineet; Prasad, Tapan

    2018-02-01

    Temperature to Frequency Converters (TFCs) are potential signal conditioning circuits (SCCs) usually employed in temperature measurements using thermistors. A NE/SE-566 based SCC has been recently used in several reported works as TFC. Application of NE/SE-566 based SCC requires a mechanism for finding the optimal values of SCC parameters yielding the optimal linearity and desired sensitivity performances. Two classical methods, namely, inflection point and three point have been employed for this task. In this work, the application of these two methods, on NE/SE-566 based SCC in TFC, is investigated in detail and the conditions for its effective usage are developed. Further, since these classical methods offer an approximate linearization of temperature and frequency relationship an application of a linear search based technique is proposed to further enhance the linearity. The implemented linear search method used results obtained from the above mentioned classical methods. The presented simulation studies, for three different industrial grade thermistors, revealed that the linearity enhancements of 21.7, 18.3 and 17.8% can be achieved over the inflection point method and 4.9, 4.7 and 4.7% over the three point method, for an input temperature range of 0-100 °C.

  11. Formation of a p-n heterojunction on GaP photocathodes for H-2 production providing an open-circuit voltage of 710 mV

    DEFF Research Database (Denmark)

    Malizia, Mauro; Seger, Brian; Chorkendorff, Ib

    2014-01-01

    Photocatalytic water splitting for the sustainable production of hydrogen using a two-photon tandem device requires careful optimization of the semiconductors used as photon absorbers. In this work we show how the open-circuit voltage of photocathodes for the hydrogen evolution reaction based on ...

  12. Current Matching in Multifold DBP/C70 Organic Solar Cells With Open-Circuit Voltages of up to 6.44 V

    DEFF Research Database (Denmark)

    Ahmadpour, Mehrad; Liu, Yiming; Rubahn, Horst-Günter

    2017-01-01

    In this paper, we demonstrate a novel method for achieving high open-circuit voltages (Voc) in organic solar cells based on tetraphenyldibenzoperiflanthen (DBP) as donor and fullerene (C70) as acceptor molecules, by fabrication of multifold bilayer single cells stacked on top of each other...

  13. Understanding S-Shaped Current-Voltage Characteristics in Organic Solar Cells Containing a TiOx Inter layer with Impedance Spectroscopy and Equivalent Circuit Analysis

    NARCIS (Netherlands)

    Ecker, Bernhard; Egelhaaf, Hans-Joachim; Steim, Roland; Parisi, Juergen; von Hauff', Elizabeth

    2012-01-01

    In this study we propose an equivalent circuit model to describe S-shaped current–voltage (I–V) characteristics in inverted solar cells with a TiOx interlayer between the cathode and the poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester active layer. Initially the solar cells

  14. Integrated circuit manufacture and tuning of subassemblies of a statistical analyzer of voltage oscillations (AKON). Izgotovleniye na integral'nykh skhemakh i nastroyka uzlov statisticheskogo analizatora kolebaniy napryazheniya (AKON)

    Energy Technology Data Exchange (ETDEWEB)

    Yermakov, V.F.; Oleynik, V.I.; Sambarov, Yu.M.

    1982-01-01

    The basic circuits and instructions for tuning subassemblies of a statistical analyzer of voltage oscillation are described. The device is intended for monitoring quality of voltage in electric networks in accordance with GOST13109-67. The component base of the device includes integrated circuits of the series 140, 155, 218 and 228.

  15. Improved open-circuit voltage in Cu(In,Ga)Se2 solar cells with high work function transparent electrodes

    International Nuclear Information System (INIS)

    Jäger, Timo; Romanyuk, Yaroslav E.; Bissig, Benjamin; Pianezzi, Fabian; Nishiwaki, Shiro; Reinhard, Patrick; Steinhauser, Jérôme; Tiwari, Ayodhya N.; Schwenk, Johannes

    2015-01-01

    Hydrogenated indium oxide (IOH) is implemented as transparent front contact in Cu(In,Ga)Se 2 (CIGS) solar cells, leading to an open circuit voltage V OC enhanced by ∼20 mV as compared to reference devices with ZnO:Al (AZO) electrodes. This effect is reproducible in a wide range of contact sheet resistances corresponding to various IOH thicknesses. We present the detailed electrical characterization of glass/Mo/CIGS/CdS/intrinsic ZnO (i-ZnO)/transparent conductive oxide (TCO) with different IOH/AZO ratios in the front TCO contact in order to identify possible reasons for the enhanced V OC . Temperature and illumination intensity-dependent current-voltage measurements indicate that the dominant recombination path does not change when AZO is replaced by IOH, and it is mainly limited to recombination in the space charge region and at the junction interface of the solar cell. The main finding is that the introduction of even a 5 nm-thin IOH layer at the i-ZnO/TCO interface already results in a step-like increase in V OC . Two possible explanations are proposed and verified by one-dimensional simulations using the SCAPS software. First, a higher work function of IOH as compared to AZO is simulated to yield an V OC increase by 21 mV. Second, a lower defect density in the i-ZnO layer as a result of the reduced sputter damage during milder sputter-deposition of IOH can also add to a maximum enhanced V OC of 25 mV. Our results demonstrate that the proper choice of the front TCO contact can reduce the parasitic recombination and boost the efficiency of CIGS cells with improved corrosion stability

  16. Module Six: Parallel Circuits; Basic Electricity and Electronics Individualized Learning System.

    Science.gov (United States)

    Bureau of Naval Personnel, Washington, DC.

    In this module the student will learn the rules that govern the characteristics of parallel circuits; the relationships between voltage, current, resistance and power; and the results of common troubles in parallel circuits. The module is divided into four lessons: rules of voltage and current, rules for resistance and power, variational analysis,…

  17. Quasi-resonant converter with divided resonant capacitor on primary and secondary side

    OpenAIRE

    Shiroyama, Hironobu; Matsuo, Hirofumi; Ishizuka, Yoichi

    2009-01-01

    This paper presents a quasi-resonant converter with divided resonant capacitor on primary and secondary side of the isolation transformer. A conventional quasi-resonant converter using flyback topology can realize soft switching with simple circuit. However, relatively large surge voltage is generated in the switching device. To suppress such surge voltage, resonant capacitor is divided on primary side and secondary side in the proposed converter. In case of prototype 95W converter, the volta...

  18. Molecular design of novel fullerene-based acceptors for enhancing the open circuit voltage in polymer solar cells

    Science.gov (United States)

    Tajbakhsh, Mahmood; Kariminasab, Mohaddeseh; Ganji, Masoud Darvish; Alinezhad, Heshmatollah

    2017-12-01

    Organic solar cells, especially bulk hetero-junction polymer solar cells (PSCs), are the most successful structures for applications in renewable energy. The dramatic improvement in the performance of PSCs has increased demand for new conjugated polymer donors and fullerene derivative acceptors. In the present study, quantum chemical calculations were performed for several representative fullerene derivatives in order to determine their frontier orbital energy levels and electronic structures, thereby helping to enhance their performance in PSC devices. We found correlations between the theoretical lowest unoccupied molecular orbital levels and electrophilicity index of various fullerenes with the experimental open circuit voltage of photovoltaic devices according to the poly(3-hexylthiophene) (P3HT):fullerene blend. The correlations between the structure and descriptors may facilitate screening of the best fullerene acceptor for the P3HT donor. Thus, we considered fullerenes with new functional groups and we predicted the output factors for the corresponding P3HT:fullerene blend devices. The results showed that fullerene derivatives based on thieno-o-quinodimethane-C60 with a methoxy group will have enhanced photovoltaic properties. Our results may facilitate the design of new fullerenes and the development of favorable acceptors for use in photovoltaic applications.

  19. Study of the Contributions of Donor and Acceptor Photoexcitations to Open Circuit Voltage in Bulk Heterojunction Organic Solar Cells

    Directory of Open Access Journals (Sweden)

    Douglas Yeboah

    2017-10-01

    Full Text Available One of the key parameters in determining the power conversion efficiency (PCE of bulk heterojunction (BHJ organic solar cells (OSCs is the open circuit voltage . The processes of exciting the donor and acceptor materials individually in a BHJ OSC are investigated and are found to produce two different expressions for . Using the contributions of electron and hole quasi-Fermi levels and charge carrier concentrations, the two different expressions are derived as functions of the energetics of the donor and acceptor materials and the photo-generated charge carrier concentrations, and calculated for a set of donor-acceptor blends. The simultaneous excitation of both the donor and acceptor materials is also considered and the corresponding , which is different from the above two, is derived. The calculated from the photoexcitation of the donor is found to be somewhat comparable with that obtained from the photoexcitation of the acceptor in most combinations of the donor and acceptor materials considered here. It is also found that the calculated from the simultaneous excitations of donor and acceptor in BHJ OSCs is also comparable with the other two . All three thus derived produce similar results and agree reasonably well with the measured values. All three depend linearly on the concentration of the photoexcited charge carriers and hence incident light intensity, which agrees with experimental results. The outcomes of this study are expected to help in finding materials that may produce higher and hence enhanced PCE in BHJ OSCs.

  20. Trifluoromethyl-Substituted Large Band-Gap Polytriphenylamines for Polymer Solar Cells with High Open-Circuit Voltages

    Directory of Open Access Journals (Sweden)

    Shuwang Yi

    2018-01-01

    Full Text Available Two large band-gap polymers (PTPACF and PTPA2CF based on polytriphenylamine derivatives with the introduction of electron-withdrawing trifluoromethyl groups were designed and prepared by Suzuki polycondensation reaction. The chemical structures, thermal, optical and electrochemical properties were characterized in detail. From the UV-visible absorption spectra, the PTPACF and PTPA2CF showed the optical band gaps of 2.01 and 2.07 eV, respectively. The cyclic voltammetry (CV measurement displayed the deep highest occupied molecular orbital (HOMO energy levels of −5.33 and −5.38 eV for PTPACF and PTPA2CF, respectively. The hole mobilities, determined by field-effect transistor characterization, were 2.5 × 10−3 and 1.1 × 10−3 cm2 V−1 S−1 for PTPACF and PTPA2CF, respectively. The polymer solar cells (PSCs were tested under the conventional device structure of ITO/PEDOT:PSS/polymer:PC71BM/PFN/Al. All of the PSCs showed the high open circuit voltages (Vocs with the values approaching 1 V. The PTPACF and PTPA2CF based PSCs gave the power conversion efficiencies (PCEs of 3.24% and 2.40%, respectively. Hence, it is a reliable methodology to develop high-performance large band-gap polymer donors with high Vocs through the feasible side-chain modification.

  1. Unraveling the High Open Circuit Voltage and High Performance of Integrated Perovskite/Organic Bulk-Heterojunction Solar Cells.

    Science.gov (United States)

    Dong, Shiqi; Liu, Yongsheng; Hong, Ziruo; Yao, Enping; Sun, Pengyu; Meng, Lei; Lin, Yuze; Huang, Jinsong; Li, Gang; Yang, Yang

    2017-08-09

    We have demonstrated high-performance integrated perovskite/bulk-heterojunction (BHJ) solar cells due to the low carrier recombination velocity, high open circuit voltage (V OC ), and increased light absorption ability in near-infrared (NIR) region of integrated devices. In particular, we find that the V OC of the integrated devices is dominated by (or pinned to) the perovskite cells, not the organic photovoltaic cells. A Quasi-Fermi Level Pinning Model was proposed to understand the working mechanism and the origin of the V OC of the integrated perovskite/BHJ solar cell, which following that of the perovskite solar cell and is much higher than that of the low bandgap polymer based organic BHJ solar cell. Evidence for the model was enhanced by examining the charge carrier behavior and photovoltaic behavior of the integrated devices under illumination of monochromatic light-emitting diodes at different characteristic wavelength. This finding shall pave an interesting possibility for integrated photovoltaic devices to harvest low energy photons in NIR region and further improve the current density without sacrificing V OC , thus providing new opportunities and significant implications for future industry applications of this kind of integrated solar cells.

  2. Diphenylphenoxy-Thiophene-PDI Dimers as Acceptors for OPV Applications with Open Circuit Voltage Approaching 1 Volt

    Directory of Open Access Journals (Sweden)

    Caterina Stenta

    2018-03-01

    Full Text Available Two new perylenediimides (PDIs have been developed for use as electron acceptors in solution-processed bulk heterojunction solar cells. The compounds were designed to exhibit maximal solubility in organic solvents, and reduced aggregation in the solid state. In order to achieve this, diphenylphenoxy groups were used to functionalize a monomeric PDI core, and two PDI dimers were bridged with either one or two thiophene units. In photovoltaic devices prepared using PDI dimers and a monomer in conjunction with PTB7, it was found that the formation of crystalline domains in either the acceptor or donor was completely suppressed. Atomic force microscopy, X-ray diffraction, charge carrier mobility measurements and recombination kinetics studies all suggest that the lack of crystallinity in the active layer induces a significant drop in electron mobility. Significant surface recombination losses associated with a lack of segregation in the material were also identified as a significant loss mechanism. Finally, the monomeric PDI was found to have sub-optimum LUMO energy matching the cathode contact, thus limiting charge carrier extraction. Despite these setbacks, all PDIs produced high open circuit voltages, reaching almost 1 V in one particular case.

  3. Various mechanisms and clinical phenotypes in electrical short circuits of high-voltage devices: report of four cases and review of the literature.

    Science.gov (United States)

    Tsurugi, Takuo; Matsui, Shogo; Nakajima, Hiroshi; Nishii, Nobuhiro; Honda, Toshihiro; Kaneko, Yoshiaki

    2015-06-01

    An electrical short circuit is a rare complication in a high-voltage implantable cardioverter-defibrillator (ICD). However, the inability of an ICD to deliver appropriate shock therapy can be life-threatening. During the last 2 years, four cases of serious complications related to an electrical short circuit have been reported in Japan. A spark due to an electrical short circuit resulted in the failure of an ICD shock to terminate ventricular tachycardia and total damage to the ICD generator in three of four cases. Two of the four patients died from an electrical short circuit between the right ventricle and superior vena cava (SVC) leads. The others had audible sounds from the ICD generator site and were diagnosed with a lead-to-can abrasion, which was manifested by the arc mark on the surface of the can. It is still difficult to predict the occurrence of an electrical short circuit in current ICD systems. To reduce the probability of an electrical short circuit, we suggest the following: (i) avoid lead stress at ICD implantation, (ii) select a single-coil lead instead of a dual-coil lead, or (iii) use a unique algorithm which automatically disconnect can or SVC lead from shock deliver circuit when excessive current was detected. Published on behalf of the European Society of Cardiology. All rights reserved. © The Author 2015. For permissions please email: journals.permissions@oup.com.

  4. Building mechanism for a high open-circuit voltage in an all-solution-processed tandem polymer solar cell.

    Science.gov (United States)

    Kong, Jaemin; Lee, Jongjin; Kim, Geunjin; Kang, Hongkyu; Choi, Youna; Lee, Kwanghee

    2012-08-14

    Additional post-processing techniques, such as post-thermal annealing and UV illumination, were found to be required to obtain desirable values of the cell parameters in a tandem polymer solar cell incorporated with solution-processed basic n-type titanium sub-oxide (TiO(x))/acidic p-type poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) interlayers. Subsequent to the fabrication of the tandem polymer solar cells, the open-circuit voltage (V(OC)) of the cells exhibited half of the expected value. Only after the application of the post-treatments, the V(OC) of a tandem cell increased from the initial half-cell value (∼0.6 V) to its full-cell value (∼1.2 V). The selective light-biased incident photon-to-current efficiency (IPCE) measurements indicated that the initial V(OC) originated from the back subcell and that the application of the post-processing treatments revived the front subcell, such that the net photocurrent of the tandem cell was finally governed by a recombination process of holes from the back subcell and electrons from the front subcell. Based on our experimental results, we suggest that a V(OC) enhancement could be ascribed to two types of subsequent junction formations at the interface between the TiO(x) and PEDOT:PSS interlayers: an 'ion-mediated dipole junction', resulting from the electro-kinetic migration of cationic ions in the interlayers during post-thermal annealing in the presence of a low-work-function metal cathode, and a 'photoinduced Schottky junction', formed by increasing the charge carrier density in the n-type TiO(x) interlayer during UV illumination process. The two junctions separately contributed to the formation of a recombination junction through which the electrons in TiO(x) and the holes in PEDOT:PSS were able to recombine without substantial voltage drops.

  5. Planar Perovskite Solar Cells with High Open-Circuit Voltage Containing a Supramolecular Iron Complex as Hole Transport Material Dopant.

    Science.gov (United States)

    Saygili, Yasemin; Turren-Cruz, Silver-Hamill; Olthof, Selina; Saes, Bartholomeus Wilhelmus Henricus; Pehlivan, Ilknur Bayrak; Saliba, Michael; Meerholz, Klaus; Edvinsson, Tomas; Zakeeruddin, Shaik M; Grätzel, Michael; Correa-Baena, Juan-Pablo; Hagfeldt, Anders; Freitag, Marina; Tress, Wolfgang

    2018-04-26

    In perovskite solar cells (PSCs), the most commonly used hole transport material (HTM) is spiro-OMeTAD, which is typically doped by metalorganic complexes, for example, based on Co, to improve charge transport properties and thereby enhance the photovoltaic performance of the device. In this study, we report a new hemicage-structured iron complex, 1,3,5-tris(5'-methyl-2,2'-bipyridin-5-yl)ethylbenzene Fe(III)-tris(bis(trifluoromethylsulfonyl)imide), as a p-type dopant for spiro-OMeTAD. The formal redox potential of this compound was measured as 1.29 V vs. the standard hydrogen electrode, which is slightly (20 mV) more positive than that of the commercial cobalt dopant FK209. Photoelectron spectroscopy measurements confirm that the iron complex acts as an efficient p-dopant, as evidenced in an increase of the spiro-OMeTAD work function. When fabricating planar PSCs with the HTM spiro-OMeTAD doped by 5 mol % of the iron complex, a power conversion efficiency of 19.5 % (AM 1.5G, 100 mW cm -2 ) is achieved, compared to 19.3 % for reference devices with FK209. Open circuit voltages exceeding 1.2 V at 1 sun and reaching 1.27 V at 3 suns indicate that recombination at the perovskite/HTM interface is low when employing this iron complex. This work contributes to recent endeavors to reduce recombination losses in perovskite solar cells. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Influence of MoOx interlayer on the maximum achievable open-circuit voltage in organic photovoltaic cells

    Science.gov (United States)

    Zou, Yunlong; Holmes, Russell

    2013-03-01

    Transition metal oxides including molybdenum oxide (MoOx) are characterized by large work functions and deep energy levels relative to the organic semiconductors used in photovoltaic cells (OPVs). These materials have been used in OPVs as interlayers between the indium-tin-oxide anode and the active layers to increase the open-circuit voltage (VOC) and power conversion efficiency. We examine the role of MoOx in determining the maximum achievable VOC in planar heterojunction OPVs based on the donor-acceptor pairing of boron subphthalocyanine chloride (SubPc) and C60. While causing minor changes in VOC at room temperature, the inclusion of MoOx significantly changes the temperature dependence of VOC. Devices containing no interlayer show a maximum VOC\\ of 1.2 V, while devices containing MoOx show no saturation in VOC, reaching a value of >1.4 V at 110 K. We propose that the MoOx-SubPc interface forms a dissociating Schottky junction that provides an additional contribution to VOC at low temperature. Separate measurements of photoluminescence confirm that excitons in SubPc can be quenched by MoOx. Charge transfer at this interface is by hole extraction from SubPc to MoOx, and this mechanism favors donors with a deep highest occupied molecular orbital (HOMO) energy level. Consistent with this expectation, the temperature dependence of VOC for devices constructed using a donor with a shallower HOMO level, e.g. copper phthalocyanine, is independent of the presence of MoOx.

  7. State of charge estimation of lithium-ion batteries using the open-circuit voltage at various ambient temperatures

    International Nuclear Information System (INIS)

    Xing, Yinjiao; He, Wei; Pecht, Michael; Tsui, Kwok Leung

    2014-01-01

    Highlights: • An offline OCV–SOC–temperature table was established to infer battery SOC. • A temperature-based model was developed to estimate SOC at different temperatures. • The algorithm for SOC estimation was verified by dynamic current load. • The robustness of the approach was validated by different initial SOC values. - Abstract: Ambient temperature is a significant factor that influences the accuracy of battery SOC estimation, which is critical for remaining driving range prediction of electric vehicles (EVs) and optimal charge/discharge control of batteries. A widely used method to estimate SOC is based on an online inference of open-circuit voltage (OCV). However, the fact that the OCV–SOC is dependent on ambient temperature can result in errors in battery SOC estimation. To address this problem, this paper presents an SOC estimation approach based on a temperature-based model incorporated with an OCV–SOC–temperature table. The unscented Kalman filtering (UKF) was applied to tune the model parameters at each sampling step to cope with various uncertainties arising from the operation environment, cell-to-cell variation, and modeling inaccuracy. Two dynamic tests, the dynamic stress test (DST) and the federal urban driving schedule (FUDS), were used to test batteries at different temperatures. Then, DST was used to identify the model parameters while FUDS was used to validate the performance of the SOC estimation. The estimation was made covering the major working range from 25% to 85% SOC. The results indicated that our method can provide accurate SOC estimation with smaller root mean squared errors than the method that does not take into account ambient temperature. Thus, our approach is effective and accurate when battery operates at different ambient temperatures. Since the developed method takes into account the temperature factor as well as the complexity of the model, it could be effectively applied in battery management systems for

  8. Polypyrrole: FeOx·ZnO nanoparticle solar cells with breakthrough open-circuit voltage prepared from relatively stable liquid dispersions

    KAUST Repository

    Zong, Baoyu

    2014-01-01

    Organic hybrid solar cells with a large open-circuit voltage, up to above that of 1.5 V standard battery voltage, were demonstrated using blends of polypyrrole: Fe2O3·ZnO nanoparticles as active-layers. The cell active-layers were readily coated in open air from relatively stable liquid dark-color polypyrrole-based dispersions, which were synthesized using appropriate surfactants during the in situ polymerization of pyrrole with FeCl3 or both H2O2 and FeCl3 as the oxidizers. The performance of the cells depends largely on the synthesized blend phase, which is determined by the surfactants, oxidizers, as well as the reactant ratio. Only the solar cells fabricated from the stable dispersions can produce both a high open-circuit voltage (>1.0 V) and short-circuit current (up to 7.5 mA cm-2) due to the relatively uniform porous network nanomorphology and higher shunt to series resistance ratio of the active-layers. The cells also display a relatively high power-conversion efficiency of up to ∼3.8%. This journal is

  9. High performance of PbSe/PbS core/shell quantum dot heterojunction solar cells: short circuit current enhancement without the loss of open circuit voltage by shell thickness control.

    Science.gov (United States)

    Choi, Hyekyoung; Song, Jung Hoon; Jang, Jihoon; Mai, Xuan Dung; Kim, Sungwoo; Jeong, Sohee

    2015-11-07

    We fabricated heterojunction solar cells with PbSe/PbS core shell quantum dots and studied the precisely controlled PbS shell thickness dependency in terms of optical properties, electronic structure, and solar cell performances. When the PbS shell thickness increases, the short circuit current density (JSC) increases from 6.4 to 11.8 mA cm(-2) and the fill factor (FF) enhances from 30 to 49% while the open circuit voltage (VOC) remains unchanged at 0.46 V even with the decreased effective band gap. We found that the Fermi level and the valence band maximum level remain unchanged in both the PbSe core and PbSe/PbS core/shell with a less than 1 nm thick PbS shell as probed via ultraviolet photoelectron spectroscopy (UPS). The PbS shell reduces their surface trap density as confirmed by relative quantum yield measurements. Consequently, PbS shell formation on the PbSe core mitigates the trade-off relationship between the open circuit voltage and the short circuit current density. Finally, under the optimized conditions, the PbSe core with a 0.9 nm thick shell yielded a power conversion efficiency of 6.5% under AM 1.5.

  10. Performance Comparison of BPL, EtherLoop and SHDSL technology performance on existing pilot cable circuits under the presence of induced voltage

    International Nuclear Information System (INIS)

    Che, Y X; Ong, H S; Lai, L C; Ong, X J; Do, N Q; Karuppiah, S

    2013-01-01

    Pilot cable is originally used for utility protection. Then, pilot cable is further utilized for SCADA communication with low frequency PSK modem in the early 1990. However, the quality of pilot cable communication drops recently. Pilot cable starts to deteriorate due to aging and other unknown factors. It is also believed that the presence of induced voltage causes interference to existing modem communication which operates at low frequency channel. Therefore, BPL (Broadband Power Line), EtherLoop and SHDSL (Symmetrical High-speed Digital Subscriber Line) modem technology are proposed as alternative communication solutions for pilot cable communication. The performance of the 3 selected technologies on existing pilot cable circuits under the presence of induced voltage are measured and compared. Total of 11 pilot circuits with different length and level of induced voltage influence are selected for modem testing. The performance of BPL, EtherLoop and SHDSL modem technology are measured by the delay, bandwidth, packet loss and the long term usability SCADA (Supervisory Control and Data Acquisition) application. The testing results are presented and discussed in this paper. The results show that the 3 selected technologies are dependent on distance and independent on the level of induced voltage.

  11. Enhancing the open-circuit voltage of dye-sensitized solar cells: coadsorbents and alternative redox couples[Dissertation 4066

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z.

    2008-04-15

    In February 2008, the oil price easily exceeded US dollar 100 per barrel due to the weak US dollar and the imbalance between the increasing demands and deficient supplies. People are paying more and more attention to seek for alternative energy sources that would suffice the modern society in the following high-oil-price era. The work in this thesis is associated with some fundamental research in one of the solutions to the energy shortage, photovoltaics. Particularly, the dye-sensitized solar cell was taken as the system where the effects of coadsorbents and alternative couples to the classic iodide/iodine redox were studied and rationalized. The first chapter was a general introduction to the photovoltaics and dye-sensitized solar cells, such as the operating principles and the characteristics of the dye cell. In Chapter 2, we specified all the experimental issues, including the chemicals, materials, film preparation, characterization techniques and data analysis. A short part was also dedicated to the basics of the photovoltaics. We studied the electronic effect of the scattering particles in our devices in Chapter 3. These particles were of 400 nm in diameter and always put on top of the nanotransparent layer to increase the light harvesting of the devices. It was found that the particles gave a small dark current but under illumination, they made a significant contribution to the total photocurrent. Photovoltage and photocurrent transient decay measurements performed under bias illumination showed that the density of electronic states of the light scattering layer was two times smaller than that of a transparent nanoparticle layer. From Chapter 4 to Chapter 7, we systematically studied the function of the coadsorbents. Application of an {omega}-guannidino carboxylic acid was found to increase the open-circuit voltage of the device by 50 mV. Coadsorbents with similar structures were then employed with an amphiphilic ruthenium sensitizer, Z-907, to scrutinize

  12. Analog circuit design : low voltage low power; short range wireless front-ends; power management and DC-DC

    NARCIS (Netherlands)

    Steyaert, M.; Roermund, van A.H.M.; Baschirotto, A.

    2012-01-01

    The book contains the contribution of 18 tutorials of the 20th workshop on Advances in Analog Circuit Design. Each part discusses a specific to-date topic on new and valuable design ideas in the area of analog circuit design. Each part is presented by six experts in that field and state of the art

  13. Asymptotic and numerical prediction of current-voltage curves for an organic bilayer solar cell under varying illumination and comparison to the Shockley equivalent circuit

    KAUST Repository

    Foster, J. M.

    2013-01-01

    In this study, a drift-diffusion model is used to derive the current-voltage curves of an organic bilayer solar cell consisting of slabs of electron acceptor and electron donor materials sandwiched together between current collectors. A simplified version of the standard drift-diffusion equations is employed in which minority carrier densities are neglected. This is justified by the large disparities in electron affinity and ionisation potential between the two materials. The resulting equations are solved (via both asymptotic and numerical techniques) in conjunction with (i) Ohmic boundary conditions on the contacts and (ii) an internal boundary condition, imposed on the interface between the two materials, that accounts for charge pair generation (resulting from the dissociation of excitons) and charge pair recombination. Current-voltage curves are calculated from the solution to this model as a function of the strength of the solar charge generation. In the physically relevant power generating regime, it is shown that these current-voltage curves are well-approximated by a Shockley equivalent circuit model. Furthermore, since our drift-diffusion model is predictive, it can be used to directly calculate equivalent circuit parameters from the material parameters of the device. © 2013 AIP Publishing LLC.

  14. Assumption or Fact? Line-to-Neutral Voltage Expression in an Unbalanced 3-Phase Circuit during Inverter Switching

    Science.gov (United States)

    Masrur, M. A.

    2009-01-01

    This paper discusses the situation in a 3-phase motor or any other 3-phase system operating under unbalanced operating conditions caused by an open fault in an inverter switch. A dc voltage source is assumed as the input to the inverter, and under faulty conditions of the inverter switch, the actual voltage applied between the line to neutral…

  15. Controlled Conjugated Backbone Twisting for an Increased Open-Circuit Voltage while Having a High Short-Circuit Current in Poly(hexylthiophene) Derivatives

    KAUST Repository

    Ko, Sangwon; Hoke, Eric T.; Pandey, Laxman; Hong, Sanghyun; Mondal, Rajib; Risko, Chad; Yi, Yuanping; Noriega, Rodrigo; McGehee, Michael D.; Bré das, Jean-Luc; Salleo, Alberto; Bao, Zhenan

    2012-01-01

    and charge-transfer state energy of the polymer:fullerene BHJ solar cells increased substantially with the degree of twist induced within the conjugated backbone-due to an increase in the polymer ionization potential-while the short-circuit current decreased

  16. Self-commutated high-voltage direct current transmission with DC circuit breakers. Backbone for the energy policy turnaround; Selbstgefuehrte Hochspannungs-Gleichstromuebertragung mit DC-Leistungsschalter. Rueckgrat fuer die Energiewende

    Energy Technology Data Exchange (ETDEWEB)

    Goerner, Raphael [ABB AG, Mannheim (Germany). Marketing und Vertrieb, Geschaeftsbereich Grid Systems

    2013-06-01

    The 'current war' between direct current and alternating current is extended by a new location. In the future, both technologies work together in order to provide a reliable power transmission in Germany and long-term in Europe. This is based on the self-guided high-voltage direct current transmission. In conjunction with direct current circuit breakers (DC circuit breaker) the power circuit breakers may help to make the transmission grids more flexible and to minimize losses.

  17. Online model-based estimation of state-of-charge and open-circuit voltage of lithium-ion batteries in electric vehicles

    International Nuclear Information System (INIS)

    He, Hongwen; Zhang, Xiaowei; Xiong, Rui; Xu, Yongli; Guo, Hongqiang

    2012-01-01

    This paper presents a method to estimate the state-of-charge (SOC) of a lithium-ion battery, based on an online identification of its open-circuit voltage (OCV), according to the battery’s intrinsic relationship between the SOC and the OCV for application in electric vehicles. Firstly an equivalent circuit model with n RC networks is employed modeling the polarization characteristic and the dynamic behavior of the lithium-ion battery, the corresponding equations are built to describe its electric behavior and a recursive function is deduced for the online identification of the OCV, which is implemented by a recursive least squares (RLS) algorithm with an optimal forgetting factor. The models with different RC networks are evaluated based on the terminal voltage comparisons between the model-based simulation and the experiment. Then the OCV-SOC lookup table is built based on the experimental data performed by a linear interpolation of the battery voltages at the same SOC during two consecutive discharge and charge cycles. Finally a verifying experiment is carried out based on nine Urban Dynamometer Driving Schedules. It indicates that the proposed method can ensure an acceptable accuracy of SOC estimation for online application with a maximum error being less than 5.0%. -- Highlights: ► An equivalent circuit model with n RC networks is built for lithium-ion batteries. ► A recursive function is deduced for the online estimation of the model parameters like OCV and R O . ► The relationship between SOC and OCV is built with a linear interpolation method by experiments. ► The experiments show the online model-based SOC estimation is reasonable with enough accuracy.

  18. Inverted Fuel Cell: Room-Temperature Hydrogen Separation from an Exhaust Gas by Using a Commercial Short-Circuited PEM Fuel Cell without Applying any Electrical Voltage.

    Science.gov (United States)

    Friebe, Sebastian; Geppert, Benjamin; Caro, Jürgen

    2015-06-26

    A short-circuited PEM fuel cell with a Nafion membrane has been evaluated in the room-temperature separation of hydrogen from exhaust gas streams. The separated hydrogen can be recovered or consumed in an in situ olefin hydrogenation when the fuel cell is operated as catalytic membrane reactor. Without applying an outer electrical voltage, there is a continuous hydrogen flux from the higher to the lower hydrogen partial pressure side through the Nafion membrane. On the feed side of the Nafion membrane, hydrogen is catalytically split into protons and electrons by the Pt/C electrocatalyst. The protons diffuse through the Nafion membrane, the electrons follow the short-circuit between the two brass current collectors. On the cathode side, protons and electrons recombine, and hydrogen is released. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. LTPS-TFT Pixel Circuit Compensating for TFT Threshold Voltage Shift and IR-Drop on the Power Line for AMOLED Displays

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2012-01-01

    Full Text Available We propose a new pixel design for the active matrix organic light-emitting diode (AMOLED using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs. The proposed pixel is composed of four switching TFTs, one driving TFT (DTFT, and one capacitor. The simulation results are performed by AIM-SPICE software. The error rate of OLED output current with (threshold voltage variation (0.3 V and power line drop by 1 V are improved to about 1.67% and 15%, respectively. Thus, the proposed pixel circuit can successfully overcome drawbacks suffered from DTFT threshold voltage deviation and IR-drop on power line.

  20. Flexible integrated diode-transistor logic (DTL) driving circuits based on printed carbon nanotube thin film transistors with low operation voltage.

    Science.gov (United States)

    Liu, Tingting; Zhao, Jianwen; Xu, Weiwei; Dou, Junyan; Zhao, Xinluo; Deng, Wei; Wei, Changting; Xu, Wenya; Guo, Wenrui; Su, Wenming; Jie, Jiansheng; Cui, Zheng

    2018-01-03

    Fabrication and application of hybrid functional circuits have become a hot research topic in the field of printed electronics. In this study, a novel flexible diode-transistor logic (DTL) driving circuit is proposed, which was fabricated based on a light emitting diode (LED) integrated with printed high-performance single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs). The LED, which is made of AlGaInP on GaAs, is commercial off-the-shelf, which could generate free electrical charges upon white light illumination. Printed top-gate TFTs were made on a PET substrate by inkjet printing high purity semiconducting SWCNTs (sc-SWCNTs) ink as the semiconductor channel materials, together with printed silver ink as the top-gate electrode and printed poly(pyromellitic dianhydride-co-4,4'-oxydianiline) (PMDA/ODA) as gate dielectric layer. The LED, which is connected to the gate electrode of the TFT, generated electrical charge when illuminated, resulting in biased gate voltage to control the TFT from "ON" status to "OFF" status. The TFTs with a PMDA/ODA gate dielectric exhibited low operating voltages of ±1 V, a small subthreshold swing of 62-105 mV dec -1 and ON/OFF ratio of 10 6 , which enabled DTL driving circuits to have high ON currents, high dark-to-bright current ratios (up to 10 5 ) and good stability under repeated white light illumination. As an application, the flexible DTL driving circuit was connected to external quantum dot LEDs (QLEDs), demonstrating its ability to drive and to control the QLED.

  1. A current-excited triple-time-voltage oversampling method for bio-impedance model for cost-efficient circuit system.

    Science.gov (United States)

    Yan Hong; Yong Wang; Wang Ling Goh; Yuan Gao; Lei Yao

    2015-08-01

    This paper presents a mathematic method and a cost-efficient circuit to measure the value of each component of the bio-impedance model at electrode-electrolyte interface. The proposed current excited triple-time-voltage oversampling (TTVO) method deduces the component values by solving triple simultaneous electric equation (TSEE) at different time nodes during a current excitation, which are the voltage functions of time. The proposed triple simultaneous electric equations (TSEEs) allows random selections of the time nodes, hence numerous solutions can be obtained during a single current excitation. Following that, the oversampling approach is engaged by averaging all solutions of multiple TSEEs acquired after a single current excitation, which increases the practical measurement accuracy through the improvement of the signal-to-noise ratio (SNR). In addition, a print circuit board (PCB) that consists a switched current exciter and an analog-to-digital converter (ADC) is designed for signal acquisition. This presents a great cost reduction when compared against other instrument-based measurement data reported [1]. Through testing, the measured values of this work is proven to be in superb agreements on the true component values of the electrode-electrolyte interface model. This work is most suited and also useful for biological and biomedical applications, to perform tasks such as stimulations, recordings, impedance characterizations, etc.

  2. Offset energies at organic semiconductor heterojunctions and their influence on the open-circuit voltage of thin-film solar cells

    Science.gov (United States)

    Rand, Barry P.; Burk, Diana P.; Forrest, Stephen R.

    2007-03-01

    Organic semiconductor heterojunction (HJ) energy level offsets are modeled using a combination of Marcus theory for electron transfer, and generalized Shockley theory of the dark current density vs voltage (J-V) characteristics. This model is used to fit the J-V characteristics of several donor-acceptor combinations commonly used in thin film organic photovoltaic cells. In combination with measurements of the energetics of donor-acceptor junctions, the model predicts tradeoffs between the junction open-circuit voltage (VOC) and short-circuit current density (JSC) . The VOC is found to increase with light intensity and inversely with temperature for 14 donor-acceptor HJ materials pairs. In particular, we find that VOC reaches a maximum at low temperature (˜175K) for many of the heterojunctions studied. The maximum value of VOC is a function of the difference between the donor ionization potential and acceptor electron affinity, minus the binding energy of the dissociated, geminate electron-hole pair: a general relationship that has implications on the charge transfer mechanism at organic heterojunctions. The fundamental understanding provided by this model leads us to infer that the maximum power conversion efficiency of double heterostructure organic photovoltaic cells can be as high as 12%. When combined with mixed layers to increase photocurrent and stacked cells to increase VOC , efficiencies approaching 16% are within reach.

  3. Measurement of the open-circuit voltage of individual subcells in a dual-junction solar cell

    Czech Academy of Sciences Publication Activity Database

    Holovský, Jakub; Bonnet-Eymard, M.; Bugnon, G.; Cuony, P.; Despeisse, M.; Ballif, C.

    2012-01-01

    Roč. 2, č. 2 (2012), s. 164-168 ISSN 2156-3381 R&D Projects: GA MŠk(CZ) 7E09057 EU Projects: European Commission(XE) 214134 - N2P Institutional research plan: CEZ:AV0Z10100521 Keywords : current-voltage characteristics * photovoltaic cells * solar energy Subject RIV: BM - Solid Matter Physics ; Magnetism

  4. Investigation of the open-circuit voltage in wide-bandgap InGaP-host InP quantum dot intermediate-band solar cells

    Science.gov (United States)

    Aihara, Taketo; Tayagaki, Takeshi; Nagato, Yuki; Okano, Yoshinobu; Sugaya, Takeyoshi

    2018-04-01

    To analyze the open-circuit voltage (V oc) in intermediate-band solar cells, we investigated the current-voltage characteristics in wide-bandgap InGaP-based InP quantum dot (QD) solar cells. From the temperature dependence of the current-voltage curves, we show that the V oc in InP QD solar cells increases with decreasing temperature. We use a simple diode model to extract V oc at the zero-temperature limit, V 0, and the temperature coefficient C of the solar cells. Our results show that, while the C of InP QD solar cells is slightly larger than that of the reference InGaP solar cells, V 0 significantly decreases and coincides with the bandgap energy of the InP QDs rather than that of the InGaP host. This V 0 indicates that the V oc reduction in the InP QD solar cells is primarily caused by the breaking of the Fermi energy separation between the QDs and the host semiconductor in intermediate-band solar cells, rather than by enhanced carrier recombination.

  5. Development of a New Cascade Voltage-Doubler for Voltage Multiplication

    OpenAIRE

    Toudeshki, Arash; Mariun, Norman; Hizam, Hashim; Abdul Wahab, Noor Izzri

    2014-01-01

    For more than eight decades, cascade voltage-doubler circuits are used as a method to produce DC output voltage higher than the input voltage. In this paper, the topological developments of cascade voltage-doublers are reviewed. A new circuit configuration for cascade voltage-doubler is presented. This circuit can produce a higher value of the DC output voltage and better output quality compared to the conventional cascade voltage-doubler circuits, with the same number of stages.

  6. Dividing Discipline

    DEFF Research Database (Denmark)

    Kristensen, Peter Marcus

    2012-01-01

    the periphery of the network—security studies and international political economy in particular—but communication is also divided along the lines of geography and policy/theory. The article concludes that divisions notwithstanding, IR communication remains centered around American, general, and theoretical IR...

  7. Low-voltage polymer/small-molecule blend organic thin-film transistors and circuits fabricated via spray deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hunter, By Simon; Anthopoulos, Thomas D., E-mail: t.anthopoulos@ic.ac.uk [Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington SW7 2AZ (United Kingdom); Ward, Jeremy W.; Jurchescu, Oana D. [Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109 (United States); Payne, Marcia M.; Anthony, John E. [Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506 (United States)

    2015-06-01

    Organic thin-film electronics have long been considered an enticing candidate in achieving high-throughput manufacturing of low-power ubiquitous electronics. However, to achieve this goal, more work is required to reduce operating voltages and develop suitable mass-manufacture techniques. Here, we demonstrate low-voltage spray-cast organic thin-film transistors based on a semiconductor blend of 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene and poly(triarylamine). Both semiconductor and dielectric films are deposited via successive spray deposition in ambient conditions (air with 40%–60% relative humidity) without any special precautions. Despite the simplicity of the deposition method, p-channel transistors with hole mobilities of >1 cm{sup 2}/Vs are realized at −4 V operation, and unipolar inverters operating at −6 V are demonstrated.

  8. Measurement of the open circuit voltage of individual sub-cells in a dual-junction solar cell

    Czech Academy of Sciences Publication Activity Database

    Holovský, Jakub; Bonnet-Eymard, M.; Bugnon, G.; Cuony, P.; Despeisse, M.; Ballif, C.

    2012-01-01

    Roč. 2, č. 2 (2012), s. 164-168 ISSN 2156-3381 R&D Projects: GA MŠk(CZ) 7E09057 EU Projects: European Commission(XE) 214134 - N2P Institutional research plan: CEZ:AV0Z10100521 Keywords : current-voltage characteristics * photovoltaic cells * solar energy Subject RIV: BM - Solid Matter Physics ; Magnetism http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6150992

  9. Commutation circuit for an HVDC circuit breaker

    Science.gov (United States)

    Premerlani, William J.

    1981-01-01

    A commutation circuit for a high voltage DC circuit breaker incorporates a resistor capacitor combination and a charging circuit connected to the main breaker, such that a commutating capacitor is discharged in opposition to the load current to force the current in an arc after breaker opening to zero to facilitate arc interruption. In a particular embodiment, a normally open commutating circuit is connected across the contacts of a main DC circuit breaker to absorb the inductive system energy trapped by breaker opening and to limit recovery voltages to a level tolerable by the commutating circuit components.

  10. Technique and Calculation Results of Currents and Voltages in the Circuits of the Measuring Element of the Protection Device of the Transmission Line Based on the Control of Transient Processes

    Science.gov (United States)

    Lachugin, V. F.; Kulikov, A. L.; Platonov, P. S.; Vucolov, V. Yu.

    2017-12-01

    The specifics of generation of the signals of current and voltage in the circuits of a directional element of wave relay protection during short circuit (SC) in overhead power transmission lines are considered. The computing method of transient processes in the protection circuits, including frequency filters, that attenuate the parameters of currents and voltages of the mode taking into account the higher harmonic components and probable deviations of the frequency of transmission line from the rated value is presented. It is revealed that it is advisable to implement the measuring circuits of the directional elements of wave relay protection with the three-section filter attenuating the frequencies from 45 to 55 Hz and the low pass filter with cutoff frequency that does not exceed 1 kHz.

  11. Simulation of the Process of Arc Energy-Effect in High Voltage Auto-Expansion SF6 Circuit Breaker

    International Nuclear Information System (INIS)

    Rong Mingzhe; Yang Qian; Fan Chunduo

    2005-01-01

    A new magnetic hydro-dynamics (MHD) model of arc in H.V. auto-expansion SF 6 circuit breaker that takes into consideration nozzle ablation due to both radiation and thermal conduction is presented in this paper. The effect of PTFE (polytetrafluorethylene) vapor is considered in the mass, momentum and energy conservation equations of the constructed model. Then, the gas flow fields with and without conduction considered are simulated. By comparing the aforementioned two results, it is indicated that the arc's maximal temperature with conduction considered is 90 percent of that without considering conduction

  12. Relationship between open-circuit voltage in Cu(In,Ga)Se2 solar cell and peak position of (220/204) preferred orientation near its absorber surface

    International Nuclear Information System (INIS)

    Chantana, J.; Minemoto, T.; Watanabe, T.; Teraji, S.; Kawamura, K.

    2013-01-01

    Cu(In,Ga)Se 2 (CIGS) absorbers with various Ga/III, Ga/(In+Ga), profiles are prepared by the so-called “multi-layer precursor method” using multi-layer co-evaporation of material sources. It is revealed that open-circuit voltage (V OC ) of CIGS solar cell is primarily dependent on averaged Ga/III near the surface of its absorber. This averaged Ga/III is well predicted by peak position of (220/204) preferred orientation of CIGS film near its surface investigated by glancing-incidence X-ray diffraction with 0.1° incident angle. Finally, the peak position of (220/204) preferred orientation is proposed as a measure of V OC before solar cell fabrication

  13. Deploying correct fault loop in distance protection of multiple-circuit shared tower transmission lines with different voltages

    DEFF Research Database (Denmark)

    Bak, Claus Leth; Silva, Filipe Miguel Faria da

    2018-01-01

    Combined faults occurring between different voltage levels in overhead lines present a challenge for distance protection. Previous work has shown that such faults most often appears as single phase to ground (SPTG) faults in a normal type of overhead line. However, it is not obvious that distance...... relays will identify and select the correct fault loop according to being similar to SPTG, as all six fault loops get excited when combined faults occur. This paper presents a study where two distance relays of different manufactures are tested using transient replay and secondary test equipment...

  14. Improve the open-circuit voltage of ZnO solar cells with inserting ZnS layers by two ways

    International Nuclear Information System (INIS)

    Sun, Yunfei; Yang, Jinghai; Yang, Lili; Cao, Jian; Gao, Ming; Zhang, Zhiqiang; Wang, Zhe; Song, Hang

    2013-01-01

    ZnS NPs layers were deposited on ZnO NRs by two different ways. One is spin coating; the other is successive ionic layer adsorption and reaction (SILAR) method. The ZnO NRs/ZnS NPs composites were verified by X-ray diffraction, X-ray photoelectron spectroscopy, and UV–visible spectrophotometer; their morphologies and thicknesses were examined by scanning electron microscopic and transmission electron microscopic images. The CdS quantum dot sensitized solar cells (QDSSCs) were constructed using ZnO NRs/ZnS NPs composites as photoanode and their photovoltaic characteristic was studied by J–V curves. The results indicated that the way of SILAR is more beneficial for retarding the back transfer of electrons to CdS and electrolyte than spin coating method. The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method. When ZnS NPs layer was deposited for 10 times on ZnO NRs, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. - Graphical abstract: When ZnO nanorods were deposited by ZnS for 10 times, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. Highlights: ► ZnS layers were deposited with two different ways. ► The way of SILAR is more beneficial for retarding the back transfer of electrons. ► The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method

  15. Improve the open-circuit voltage of ZnO solar cells with inserting ZnS layers by two ways

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Yunfei [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Yang, Jinghai, E-mail: jhyang1@jlnu.edu.cn [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Yang, Lili; Cao, Jian [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Gao, Ming [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences, Beijing 100049 (China); Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Zhang, Zhiqiang; Wang, Zhe [Institute of Condensed State Physics, Jilin Normal University, Siping 136000 (China); Song, Hang [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

    2013-04-15

    ZnS NPs layers were deposited on ZnO NRs by two different ways. One is spin coating; the other is successive ionic layer adsorption and reaction (SILAR) method. The ZnO NRs/ZnS NPs composites were verified by X-ray diffraction, X-ray photoelectron spectroscopy, and UV–visible spectrophotometer; their morphologies and thicknesses were examined by scanning electron microscopic and transmission electron microscopic images. The CdS quantum dot sensitized solar cells (QDSSCs) were constructed using ZnO NRs/ZnS NPs composites as photoanode and their photovoltaic characteristic was studied by J–V curves. The results indicated that the way of SILAR is more beneficial for retarding the back transfer of electrons to CdS and electrolyte than spin coating method. The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method. When ZnS NPs layer was deposited for 10 times on ZnO NRs, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. - Graphical abstract: When ZnO nanorods were deposited by ZnS for 10 times, the conversion efficiency of QDSSC shows ∼3.3 folds increments of as-synthesized ZnO solar cell. Highlights: ► ZnS layers were deposited with two different ways. ► The way of SILAR is more beneficial for retarding the back transfer of electrons. ► The open-circuit voltage increased to 0.59 V by introducing a ZnS layer through SILAR method.

  16. Electric circuits and signals

    CERN Document Server

    Sabah, Nassir H

    2007-01-01

    Circuit Variables and Elements Overview Learning Objectives Electric Current Voltage Electric Power and Energy Assigned Positive Directions Active and Passive Circuit Elements Voltage and Current Sources The Resistor The Capacitor The Inductor Concluding Remarks Summary of Main Concepts and Results Learning Outcomes Supplementary Topics on CD Problems and Exercises Basic Circuit Connections and Laws Overview Learning Objectives Circuit Terminology Kirchhoff's Laws Voltage Division and Series Connection of Resistors Current Division and Parallel Connection of Resistors D-Y Transformation Source Equivalence and Transformation Reduced-Voltage Supply Summary of Main Concepts and Results Learning Outcomes Supplementary Topics and Examples on CD Problems and Exercises Basic Analysis of Resistive Circuits Overview Learning Objectives Number of Independent Circuit Equations Node-Voltage Analysis Special Considerations in Node-Voltage Analysis Mesh-Current Analysis Special Conside...

  17. Short- circuit tests of circuit breakers

    OpenAIRE

    Chorovský, P.

    2015-01-01

    This paper deals with short-circuit tests of low voltage electrical devices. In the first part of this paper, there are described basic types of short- circuit tests and their principles. Direct and indirect (synthetic) tests with more details are described in the second part. Each test and principles are explained separately. Oscilogram is obtained from short-circuit tests of circuit breakers at laboratory. The aim of this research work is to propose a test circuit for performing indirect test.

  18. An open circuit voltage equation enabling separation of cathode and anode polarization resistances of ceria electrolyte based solid oxide fuel cells

    Science.gov (United States)

    Zhang, Yanxiang; Chen, Yu; Yan, Mufu

    2017-07-01

    The open circuit voltage (OCV) of solid oxide fuel cells is generally overestimated by the Nernst equation and the Wagner equation, due to the polarization losses at electrodes. Considering both the electronic conduction of electrolyte and the electrode polarization losses, we express the OCV as an implicit function of the characteristic oxygen pressure of electrolyte (p* [atm], at which the electronic and ionic conductivities are the same), and the relative polarization resistance of electrodes (rc = Rc/Ri and ra = Ra/Ri, where Ri/c/a [Ωcm2] denotes the ionic resistance of electrolyte, and the polarization resistances of cathode and anode, respectively). This equation approaches to the Wagner equation when the electrodes are highly active (rc and ra → 0), and approaches to the Nernst equation when the electrolyte is a purely ionic conductor (p* → 0). For the fuel cells whose OCV is well below the prediction of the Wagner equation, for example with thin doped ceria electrolyte, it is demonstrated that the combination of OCV and impedance spectroscopy measurements allows the determination of p*, Rc and Ra. This equation can serve as a simple yet powerful tool to study the internal losses in the cell under open circuit condition.

  19. Online Estimation of Model Parameters and State of Charge of LiFePO4 Batteries Using a Novel Open-Circuit Voltage at Various Ambient Temperatures

    Directory of Open Access Journals (Sweden)

    Fei Feng

    2015-04-01

    Full Text Available This study describes an online estimation of the model parameters and state of charge (SOC of lithium iron phosphate batteries in electric vehicles. A widely used SOC estimator is based on the dynamic battery model with predeterminate parameters. However, model parameter variances that follow with their varied operation temperatures can result in errors in estimating battery SOC. To address this problem, a battery online parameter estimator is presented based on an equivalent circuit model using an adaptive joint extended Kalman filter algorithm. Simulations based on actual data are established to verify accuracy and stability in the regression of model parameters. Experiments are also performed to prove that the proposed estimator exhibits good reliability and adaptability under different loading profiles with various temperatures. In addition, open-circuit voltage (OCV is used to estimate SOC in the proposed algorithm. However, the OCV based on the proposed online identification includes a part of concentration polarization and hysteresis, which is defined as parametric identification-based OCV (OCVPI. Considering the temperature factor, a novel OCV–SOC relationship map is established by using OCVPI under various temperatures. Finally, a validating experiment is conducted based on the consecutive loading profiles. Results indicate that our method is effective and adaptable when a battery operates at different ambient temperatures.

  20. An Experimental Determination of the Quasi-Rest Potential of Copper Indium Disulfide Utilizing the Novel Open-Circuit Voltage Transient

    Science.gov (United States)

    Newell, Michael Jason

    Environmental sustainability requires resource management that takes future generations into account. The present generation has witnessed changes across the planet, unprecedented in human history and disrupting communities and cities around the world, due to shifting global climate. This is primarily the result of fossil fuels, which powered modern civilization but dramatically increased levels of CO2 and other greenhouse gases, and may be the least sustainable aspect of human civilization. Chapter 1 justifies the research from an environmental perspective and provides initial research parameters. Thin film photovoltaic (PV) modules are reported the most sustainable among energy production technologies currently available. Electrodeposited PV layers offer significant improvement to sustainability metrics over current thin film production methods, at reduced cost, but have rarely been demonstrated on an industrial scale. Quasi-rest potential (QRP) ultimately led to large-scale, electrodeposited thin film CdTe modules. An in-situ material characterization technique that allows adjustment of the deposition voltage (Vdep) to match the exact experimental conditions, QRP enabled precise control of deposit stoichiometry and crystallinity. Chapter 2 discusses theory and literature regarding QRP, and introduces the open-circuit voltage transient (Voc T), developed by the present research for analyzing QRP as a function of both Vdep and time. VocT data from a CdTe ethylene glycol bath matches details and speculations from the literature. Although predicted to have wide applicability, experimental QRP data have never been published for compounds unrelated to CdTe. Chapter 3 discusses VocTs performed in pursuit of electrodeposited CuInS2, demonstrating functionality as a QRP scan in a variety of ethylene glycol solutions. Stoichiometries of deposited films were improved by using the V ocT to determine appropriate plating voltages. VocTs enabled QRP, in-situ rest potential (EM

  1. Electron-deficient N-alkyloyl derivatives of thieno[3,4-c]pyrrole-4,6-dione yield efficient polymer solar cells with open-circuit voltages > 1 v

    KAUST Repository

    Warnan, Julien; Cabanetos, Clement; Bude, Romain; El Labban, Abdulrahman; LI, LIANG; Beaujuge, Pierre

    2014-01-01

    Poly(benzo[1,2-b:4,5-b′]dithiophene-thieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD) polymer donors yield some of the highest open-circuit voltages (V OC, ca. 0.9 V) and fill factors (FF, ca. 70%) in conventional bulk-heterojunction (BHJ) solar cells

  2. Thieno[3,4-c]Pyrrole-4,6-Dione-Based Polymer Acceptors for High Open-Circuit Voltage All-Polymer Solar Cells

    KAUST Repository

    Liu, Shengjian

    2017-04-20

    While polymer acceptors are promising fullerene alternatives in the fabrication of efficient bulk heterojunction (BHJ) solar cells, the range of efficient material systems relevant to the “all-polymer” BHJ concept remains narrow, and currently limits the perspectives to meet the 10% efficiency threshold in all-polymer solar cells. This report examines two polymer acceptor analogs composed of thieno[3,4-c]pyrrole-4,6-dione (TPD) and 3,4-difluorothiophene ([2F]T) motifs, and their BHJ solar cell performance pattern with a low-bandgap polymer donor commonly used with fullerenes (PBDT-TS1; taken as a model system). In this material set, the introduction of a third electron-deficient motif, namely 2,1,3-benzothiadiazole (BT), is shown to (i) significantly narrow the optical gap (Eopt) of the corresponding polymer (by ≈0.2 eV) and (ii) improve the electron mobility of the polymer by over two orders of magnitude in BHJ solar cells. In turn, the narrow-gap P2TPDBT[2F]T analog (Eopt = 1.7 eV) used as fullerene alternative yields high open-circuit voltages (VOC) of ≈1.0 V, notable short-circuit current values (JSC) of ≈11.0 mA cm−2, and power conversion efficiencies (PCEs) nearing 5% in all-polymer BHJ solar cells. P2TPDBT[2F]T paves the way to a new, promising class of polymer acceptor candidates.

  3. Enhancement of open-circuit voltage on organic photovoltaic devices by Al-doped TiO{sub 2} modifying layer produced by sol–gel method

    Energy Technology Data Exchange (ETDEWEB)

    Valaski, R.; Arantes, C.; Senna, C.A.; Carôzo, Victor; Achete, C.A. [Materials Metrology Division, Instituto Nacional de Metrologia, Qualidade e Tecnologia, Xerém, Duque de Caxias 25250-020, RJ (Brazil); Cremona, M., E-mail: cremona@fis.puc-rio.br [Materials Metrology Division, Instituto Nacional de Metrologia, Qualidade e Tecnologia, Xerém, Duque de Caxias 25250-020, RJ (Brazil); Physics Department, Pontifícia Universidade Católica do Rio de Janeiro, Rio de Janeiro 22453-970, RJ (Brazil)

    2014-12-01

    Sol–gel method has shown several advantages for oxide synthesis, such as lower cost production, coating large areas, lower processing temperatures and ease insertion of doping materials. Therefore, it is attractive for production of intermediate and electrode modifying layers in organic optoelectronic devices. Herein, spin-coated aluminum-doped titanium dioxide (AlTiO{sub 2}) thin films were produced by sol–gel method onto glass and fluorine-doped tin oxide (FTO) substrates, using different Al-dopant concentrations and post-done annealing temperatures. Electrical measurements were performed in order to investigate the improvement of the TiO{sub 2} resistivity. Additionally, structural, compositional, morphological, optical and electrical properties of the optimal AlTiO{sub 2} modifying layers onto FTO substrates were probed by different techniques, and compared with those obtained from the undoped thin films produced under similar conditions. Organic photovoltaic devices (OPVs) with the structure FTO/AlTiO{sub 2}(30 nm)/C{sub 60}(50 nm)/CuPc(50 nm)/Al with an Al concentration of 0.03 M in AlTiO{sub 2} layer were produced. The insertion of AlTiO{sub 2} thin films improved the short-circuit current density (J{sub sc}) as well as the open circuit voltage (V{sub oc}) in comparison with non-modified electrode FTO based devices. This behavior is discussed in terms of induced interface phenomena as dipole formation induced by Al. - Highlights: • Easy and cheap solution-process for AlTiO{sub 2} modification of FTO electrode for OPVs • Electrical, structural and optical characterization of TiO{sub 2} layers with Al-dopant • Improvement of Voc and Jsc of inverted OPVs with AlTiO{sub 2} modified electrode.

  4. Enhancement of open-circuit voltage on organic photovoltaic devices by Al-doped TiO2 modifying layer produced by sol–gel method

    International Nuclear Information System (INIS)

    Valaski, R.; Arantes, C.; Senna, C.A.; Carôzo, Victor; Achete, C.A.; Cremona, M.

    2014-01-01

    Sol–gel method has shown several advantages for oxide synthesis, such as lower cost production, coating large areas, lower processing temperatures and ease insertion of doping materials. Therefore, it is attractive for production of intermediate and electrode modifying layers in organic optoelectronic devices. Herein, spin-coated aluminum-doped titanium dioxide (AlTiO 2 ) thin films were produced by sol–gel method onto glass and fluorine-doped tin oxide (FTO) substrates, using different Al-dopant concentrations and post-done annealing temperatures. Electrical measurements were performed in order to investigate the improvement of the TiO 2 resistivity. Additionally, structural, compositional, morphological, optical and electrical properties of the optimal AlTiO 2 modifying layers onto FTO substrates were probed by different techniques, and compared with those obtained from the undoped thin films produced under similar conditions. Organic photovoltaic devices (OPVs) with the structure FTO/AlTiO 2 (30 nm)/C 60 (50 nm)/CuPc(50 nm)/Al with an Al concentration of 0.03 M in AlTiO 2 layer were produced. The insertion of AlTiO 2 thin films improved the short-circuit current density (J sc ) as well as the open circuit voltage (V oc ) in comparison with non-modified electrode FTO based devices. This behavior is discussed in terms of induced interface phenomena as dipole formation induced by Al. - Highlights: • Easy and cheap solution-process for AlTiO 2 modification of FTO electrode for OPVs • Electrical, structural and optical characterization of TiO 2 layers with Al-dopant • Improvement of Voc and Jsc of inverted OPVs with AlTiO 2 modified electrode

  5. Improved open-circuit voltage in Cu(In,Ga)Se{sub 2} solar cells with high work function transparent electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Jäger, Timo, E-mail: timo.jaeger@empa.ch; Romanyuk, Yaroslav E.; Bissig, Benjamin; Pianezzi, Fabian; Nishiwaki, Shiro; Reinhard, Patrick; Steinhauser, Jérôme; Tiwari, Ayodhya N. [Empa—Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Thin Films and Photovoltaics, Überlandstrasse 129, 8600 Dübendorf (Switzerland); Schwenk, Johannes [Empa—Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Nanoscale Materials Science, Überlandstrasse 129, 8600 Dübendorf (Switzerland)

    2015-06-14

    Hydrogenated indium oxide (IOH) is implemented as transparent front contact in Cu(In,Ga)Se{sub 2} (CIGS) solar cells, leading to an open circuit voltage V{sub OC} enhanced by ∼20 mV as compared to reference devices with ZnO:Al (AZO) electrodes. This effect is reproducible in a wide range of contact sheet resistances corresponding to various IOH thicknesses. We present the detailed electrical characterization of glass/Mo/CIGS/CdS/intrinsic ZnO (i-ZnO)/transparent conductive oxide (TCO) with different IOH/AZO ratios in the front TCO contact in order to identify possible reasons for the enhanced V{sub OC}. Temperature and illumination intensity-dependent current-voltage measurements indicate that the dominant recombination path does not change when AZO is replaced by IOH, and it is mainly limited to recombination in the space charge region and at the junction interface of the solar cell. The main finding is that the introduction of even a 5 nm-thin IOH layer at the i-ZnO/TCO interface already results in a step-like increase in V{sub OC}. Two possible explanations are proposed and verified by one-dimensional simulations using the SCAPS software. First, a higher work function of IOH as compared to AZO is simulated to yield an V{sub OC} increase by 21 mV. Second, a lower defect density in the i-ZnO layer as a result of the reduced sputter damage during milder sputter-deposition of IOH can also add to a maximum enhanced V{sub OC} of 25 mV. Our results demonstrate that the proper choice of the front TCO contact can reduce the parasitic recombination and boost the efficiency of CIGS cells with improved corrosion stability.

  6. SEMICONDUCTOR INTEGRATED CIRCUITS 8.64-11.62 GHz CMOS VCO and divider in a zero-IF 802.11a/b/g WLAN and Bluetooth application

    Science.gov (United States)

    Yu, Sun; Niansong, Mei; Bo, Lu; Yumei, Huang; Zhiliang, Hong

    2010-10-01

    A fully integrated VCO and divider implemented in SMIC 0.13-μm RFCMOS 1P8M technology with a 1.2 V supply voltage is presented. The frequency of the VCO is tuning from 8.64 to 11.62 GHz while the quadrature LO signals for 802.11a WLAN in 5.8 GHz band or for 802.11b/g WLAN and Bluetooth in 2.4 GHz band can be obtained by a frequency division by 2 or 4, respectively. A 6 bit switched capacitor array is applied for precise tuning of all necessary frequency bands. The testing results show that the VCO has a phase noise of—113 dBc @ 1 MHz offset from the carrier of 5.5 GHz by dividing VCO output by two and the VCO core consumes 3.72 mW. The figure-of-merit for the tuning-range (FOMT) of the VCO is -192.6 dBc/Hz.

  7. Open-Circuit Voltage in Organic Solar Cells: The Impacts of Donor Semicrystallinity and Coexistence of Multiple Interfacial Charge-Transfer Bands

    KAUST Repository

    Ngongang Ndjawa, Guy Olivier; Graham, Kenneth; Mollinger, Sonya; Wu, Di M.; Hanifi, David; Prasanna, Rohit; Rose, Bradley Daniel; Dey, Sukumar; Yu, Liyang; Bredas, Jean-Luc; McGehee, Michael D.; Salleo, Alberto; Amassian, Aram

    2017-01-01

    In organic solar cells (OSCs), the energy of the charge-transfer (CT) complexes at the donor-acceptor interface, E , determines the maximum open-circuit voltage (V ). The coexistence of phases with different degrees of order in the donor or the acceptor, as in blends of semi-crystalline donors and fullerenes in bulk heterojunction layers, influences the distribution of CT states and the V enormously. Yet, the question of how structural heterogeneities alter CT states and the V is seldom addressed systematically. In this work, we combine experimental measurements of vacuum-deposited rubrene/C bilayer OSCs, with varying microstructure and texture, with density functional theory calculations to determine how relative molecular orientations and extents of structural order influence E and V . We find that varying the microstructure of rubrene gives rise to CT bands with varying energies. The CT band that originates from crystalline rubrene lies up to ≈0.4 eV lower in energy compared to the one that arises from amorphous rubrene. These low-lying CT states contribute strongly to V losses and result mainly from hole delocalization in aggregated rubrene. This work points to the importance of realizing interfacial structural control that prevents the formation of low E configurations and maximizes V .

  8. Fine Tuning of Open-Circuit Voltage by Chlorination in Thieno[3,4- b ]thiophene–Benzodithiophene Terpolymers toward Enhanced Solar Energy Conversion

    Energy Technology Data Exchange (ETDEWEB)

    Qu, Shiwei; Wang, Huan; Mo, Daize; Chao, Pengjie; Yang, Zhen; Li, Longji; Tian, Leilei; Chen, Wei [Materials; Institute; He, Feng

    2017-06-22

    A new family of thieno[3,4-b]thiophene benzodithiophene terpolymers (PBTClx) have been designed and synthesized, in which the chlorine/fluorine content has been adjusted and optimized. As the content of chlorine is increased in polymers, the twist angle between the donor and acceptor is increased, which leads to a diminishment in the planarity and conjugation. As a result, the UV vis absorption is continuous blue-shifted, and the band gap increases from 1.57 to 2.04 eV when the chlorinated moieties increased from 0 to 100%. The highest occupied molecular orbital (HOMO) levels of those polymers are decreased by increasing the content of chlorinated moiety, which opens a window to constantly modify the V-oc values and eventually meets a balance point for optimized solar energy conversion. The highest power conversion efficiency of 8.31% is obtained by using PBTCl25 as the donor and PC71BM as the acceptor in polymer solar cells (PSCs), in which the Voc increased from 0.79 to 0.82 V after 25% chlorinated monomer involved in copolymerization. Herein, the chlorine replacement could be a good method to further pump the solar conversion by increasing the open circuit voltage without reducing other factors of the polymer solar cells.

  9. Simultaneous Increase in Open-Circuit Voltage and Efficiency of Fullerene-Free Solar Cells through Chlorinated Thieno[3,4- b ]thiophene Polymer Donor

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Huan [Department; Chao, Pengjie [Department; Chen, Hui [Department; Mu, Zhao [Department; Chen, Wei [Materials; Institute; He, Feng [Department

    2017-08-09

    The chlorinated polymer, PBTCl, has been found to be an efficient donor in nonfullerene polymer solar cells (PSCs), which showed a blue-shifted absorbance compared to that of its fluorine analogue (PTB7-th) and resulted in more complementary light absorption with a nonfullerene acceptor, such as ITIC. Meanwhile, chlorine substitution lowered the HOMO level of PBTCl, which increased the open-circuit voltage of the corresponding polymer-based devices. The 2D GIWAXS analysis illustrated that the PBTCl/ITIC blend film exhibited a “face-on” orientation and scattering features of both PBTCl and ITIC, suggesting that the blend of PBTCl and ITIC was phase-separated and formed individual crystalline domains of the donor and acceptor, which promoted charge transfer in the bicontinuous film and eventually elevated the solar energy conversion efficiency. The PBTCl-based nonfullerene PSC exhibited a maximum PCE of 7.57% with a Voc of 0.91 V, which was an approximately 13% increasing in the PCE compared to that of the fluorine-analogue-based device.

  10. Finding the lost open-circuit voltage in polymer solar cells by UV-ozone treatment of the nickel acetate anode buffer layer.

    Science.gov (United States)

    Wang, Fuzhi; Sun, Gang; Li, Cong; Liu, Jiyan; Hu, Siqian; Zheng, Hua; Tan, Zhan'ao; Li, Yongfang

    2014-06-25

    Efficient polymer solar cells (PSCs) with enhanced open-circuit voltage (Voc) are fabricated by introducing solution-processed and UV-ozone (UVO)-treated nickel acetate (O-NiAc) as an anode buffer layer. According to X-ray photoelectron spectroscopy data, NiAc partially decomposed to NiOOH during the UVO treatment. NiOOH is a dipole species, which leads to an increase in the work function (as confirmed by ultraviolet photoemission spectroscopy), thus benefitting the formation of ohmic contact between the anode and photoactive layer and leading to increased Voc. In addition, the UVO treatment improves the wettability between the substrate and solvent of the active layer, which facilitates the formation of an upper photoactive layer with better morphology. Further, the O-NiAc layer can decrease the series resistance (Rs) and increase the parallel resistance (Rp) of the devices, inducing enhanced Voc in comparison with the as-prepared NiAc-buffered control devices without UVO treatment. For PSCs based on the P3HT:PCBM system, Voc increases from 0.50 to 0.60 V after the NiAc buffer layer undergoes UVO treatment. Similarly, in the P3HT:ICBA system, the Voc value of the device with a UVO-treated NiAc buffer layer increases from 0.78 to 0.88 V, showing an enhanced power conversion efficiency of 6.64%.

  11. Open-Circuit Voltage in Organic Solar Cells: The Impacts of Donor Semicrystallinity and Coexistence of Multiple Interfacial Charge-Transfer Bands

    KAUST Repository

    Ngongang Ndjawa, Guy Olivier

    2017-01-16

    In organic solar cells (OSCs), the energy of the charge-transfer (CT) complexes at the donor-acceptor interface, E , determines the maximum open-circuit voltage (V ). The coexistence of phases with different degrees of order in the donor or the acceptor, as in blends of semi-crystalline donors and fullerenes in bulk heterojunction layers, influences the distribution of CT states and the V enormously. Yet, the question of how structural heterogeneities alter CT states and the V is seldom addressed systematically. In this work, we combine experimental measurements of vacuum-deposited rubrene/C bilayer OSCs, with varying microstructure and texture, with density functional theory calculations to determine how relative molecular orientations and extents of structural order influence E and V . We find that varying the microstructure of rubrene gives rise to CT bands with varying energies. The CT band that originates from crystalline rubrene lies up to ≈0.4 eV lower in energy compared to the one that arises from amorphous rubrene. These low-lying CT states contribute strongly to V losses and result mainly from hole delocalization in aggregated rubrene. This work points to the importance of realizing interfacial structural control that prevents the formation of low E configurations and maximizes V .

  12. Leakage Current Induced by Energetic Disorder in Organic Bulk Heterojunction Solar Cells: Comprehending the Ultrahigh Loss of Open-Circuit Voltage at Low Temperatures

    Science.gov (United States)

    Yang, Wenchao; Luo, Yongsong; Guo, Pengfei; Sun, Haibin; Yao, Yao

    2017-04-01

    The open-circuit voltage (Voc ) of organic solar cells generally approaches its maximum obtainable values as the temperature decreases. However, recent experiments have revealed that the Voc may suffer from an ultrahigh loss at low temperatures. In order to verify this explanation and investigate the impacts of energetic disorder on the temperature-dependent behaviors of the Voc in general, we calculate the Voc-T plots with the drift-diffusion method under various device working parameters. With the disorder being incorporated into the device model by considering the disorder-suppressed (temperature-dependent) charge-carrier mobilities, it is found that the ultrahigh Voc losses cannot be reproduced under the Onsager-Braun-type charge generation rate. With the charge generation rate being constant or weakly dependent on temperature, for nonselective contacts, the Voc reduces drastically at low temperatures, while for selective contacts, the Voc increases monotonically with decreasing temperature. With higher carrier mobilities or smaller device thicknesses, the ultrahigh loss occurs at lower temperatures. The mechanism is that, since the disorder-suppressed charge mobilities give rise to both low charge-extraction efficiency and small bimolecular recombination rate, plenty of charge carriers can be extracted from the wrong electrode and can form a large leakage current, which counteracts the majority-carrier current and reduces the Voc at low temperatures. Our results thus highlight the essential role of charge-carrier kinetics, except for the charge-filling effect, on dominating the disorder-induced Voc losses.

  13. An Open-Circuit Voltage and Power Conversion Efficiency Study of Fullerene Ternary Organic Solar Cells Based on Oligomer/Oligomer and Oligomer/Polymer.

    Science.gov (United States)

    Zhang, Guichuan; Zhou, Cheng; Sun, Chen; Jia, Xiaoe; Xu, Baomin; Ying, Lei; Huang, Fei; Cao, Yong

    2017-07-01

    Variations in the open-circuit voltage (V oc ) of ternary organic solar cells are systematically investigated. The initial study of these devices consists of two electron-donating oligomers, S2 (two units) and S7 (seven units), and the electron-accepting [6,6]-phenyl C71 butyric acid methyl ester (PC 71 BM) and reveals that the V oc is continuously tunable due to the changing energy of the charge transfer state (E ct ) of the active layers. Further investigation suggests that V oc is also continuously tunable upon change in E ct in a ternary blend system that consists of S2 and its corresponding polymer (P11):PC 71 BM. It is interesting to note that higher power conversion efficiencies can be obtained for both S2:S7:PC 71 BM and S2:P11:PC 71 BM ternary systems compared with their binary systems, which can be ascribed to an improved V oc due to the higher E ct and an improved fill factor due to the improved film morphology upon the incorporation of S2. These findings provide a new guideline for the future design of conjugated polymers for achieving higher performance of ternary organic solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Assessment of image quality and low-contrast detectability in abdominal CT of obese patients: comparison of a novel integrated circuit with a conventional discrete circuit detector at different tube voltages.

    Science.gov (United States)

    Euler, A; Heye, T; Kekelidze, M; Bongartz, G; Szucs-Farkas, Z; Sommer, C; Schmidt, B; Schindera, Sebastian T

    2015-03-01

    To compare image quality and low-contrast detectability of an integrated circuit (IC) detector in abdominal CT of obese patients with conventional detector technology at low tube voltages. A liver phantom with 45 lesions was placed in a water container to mimic an obese patient and examined on two different CT systems at 80, 100 and 120 kVp. The systems were equipped with either the IC or conventional detector. Image noise was measured, and the contrast-to-noise-ratio (CNR) was calculated. Low-contrast detectability was assessed independently by three radiologists. Radiation dose was estimated by the volume CT dose index (CTDIvol). The image noise was significantly lower, and the CNR was significantly higher with the IC detector at 80, 100 and 120 kVp, respectively (P = 0.023). The IC detector resulted in an increased lesion detection rate at 80 kVp (38.1 % vs. 17.2 %) and 100 kVp (57.0 % vs. 41.0 %). There was no difference in the detection rate between the IC detector at 100 kVp and the conventional detector at 120 kVp (57.0 % vs. 62.2 %). The CTDIvol at 80, 100 and 120 kVp measured 4.5-5.2, 7.3-7.9 and 9.8-10.2 mGy, respectively. The IC detector at 100 kVp resulted in similar low-contrast detectability compared to the conventional detector with a 120-kVp protocol at a radiation dose reduction of 37 %.

  15. Assessment of image quality and low-contrast detectability in abdominal CT of obese patients: comparison of a novel integrated circuit with a conventional discrete circuit detector at different tube voltages

    Energy Technology Data Exchange (ETDEWEB)

    Euler, A.; Heye, T.; Kekelidze, M.; Bongartz, G.; Schindera, Sebastian T. [University of Basel Hospital, Clinic of Radiology and Nuclear Medicine, Basel (Switzerland); Szucs-Farkas, Z. [Hospital Centre of Biel, Institute of Radiology, Biel (Switzerland); Sommer, C. [University Hospital, Department of Diagnostic and Interventional Radiology, Heidelberg (Germany); Schmidt, B. [Siemens Healthcare Sector, Forchheim (Germany)

    2014-10-15

    To compare image quality and low-contrast detectability of an integrated circuit (IC) detector in abdominal CT of obese patients with conventional detector technology at low tube voltages. A liver phantom with 45 lesions was placed in a water container to mimic an obese patient and examined on two different CT systems at 80, 100 and 120 kVp. The systems were equipped with either the IC or conventional detector. Image noise was measured, and the contrast-to-noise-ratio (CNR) was calculated. Low-contrast detectability was assessed independently by three radiologists. Radiation dose was estimated by the volume CT dose index (CTDI{sub vol}). The image noise was significantly lower, and the CNR was significantly higher with the IC detector at 80, 100 and 120 kVp, respectively (P = 0.023). The IC detector resulted in an increased lesion detection rate at 80 kVp (38.1 % vs. 17.2 %) and 100 kVp (57.0 % vs. 41.0 %). There was no difference in the detection rate between the IC detector at 100 kVp and the conventional detector at 120 kVp (57.0 % vs. 62.2 %). The CTDI{sub vol} at 80, 100 and 120 kVp measured 4.5-5.2, 7.3-7.9 and 9.8-10.2 mGy, respectively. The IC detector at 100 kVp resulted in similar low-contrast detectability compared to the conventional detector with a 120-kVp protocol at a radiation dose reduction of 37 %. (orig.)

  16. Thermophysical and radiation properties of high-temperature C4F8-CO2 mixtures to replace SF6 in high-voltage circuit breakers

    Science.gov (United States)

    Zhong, Linlin; Cressault, Yann; Teulet, Philippe

    2018-03-01

    C4F8-CO2 mixtures are one of the potential substitutes to SF6 in high-voltage circuit breakers. However, the arc quenching ability of C4F8-CO2 mixtures is still unknown. In order to provide the necessary basic data for the further investigation of arc quenching performance, the compositions, thermodynamic properties, transport coefficients, and net emission coefficients (NEC) of various C4F8-CO2 mixtures are calculated at temperatures of 300-30 000 K in this work. The thermodynamic properties are presented as the product of mass density and specific heat, i.e., ρCp. The transport coefficients include electrical conductivity, viscosity, and thermal conductivity. The atomic and molecular radiation are both taken into account in the calculation of NEC. The comparison of the properties between SF6 and C4F8-CO2 mixtures is also discussed to find their differences. The results of compositions show that C4F8-CO2 mixtures have a distinctive advantage over other alternative gases e.g., CF3I and C3F8, because the dissociative product (i.e., C4F6) of C4F8 at low temperatures has a very high dielectric strength. This is good for an arc quenching medium to endure the arc recovery phase. Compared with SF6, C4F8-CO2 mixtures present lower ρCp at temperatures below 2800 K and larger thermal conductivity above 2800 K. Based on the position of peaks in thermal conductivity, we predict that the cooling of C4F8-CO2 arc will be slowed down at higher temperatures than that of SF6 arc. It is also found that the mixing of CO2 shows slight effects on the electrical conductivity and NEC of C4F8-CO2 mixtures.

  17. Probing the Energy Level Alignment and the Correlation with Open-Circuit Voltage in Solution-Processed Polymeric Bulk Heterojunction Photovoltaic Devices.

    Science.gov (United States)

    Yang, Qing-Dan; Li, Ho-Wa; Cheng, Yuanhang; Guan, Zhiqiang; Liu, Taili; Ng, Tsz-Wai; Lee, Chun-Sing; Tsang, Sai-Wing

    2016-03-23

    Energy level alignment at the organic donor and acceptor interface is a key to determine the photovoltaic performance in organic solar cells, but direct probing of such energy alignment is still challenging especially for solution-processed bulk heterojunction (BHJ) thin films. Here we report a systematic investigation on probing the energy level alignment with different approaches in five commonly used polymer:[6,6]-phenyl-C71-butyric acid methyl ester (PCBM) BHJ systems. We find that by tuning the weight ratio of polymer to PCBM the electronic features from both polymer and PCBM can be obtained by photoemission spectroscopy. Using this approach, we find that some of the BHJ blends simply follow vacuum level alignment, but others show strong energy level shifting as a result of Fermi level pinning. Independently, by measuring the temperature-dependent open-circuit voltage (VOC), we find that the effective energy gap (Eeff), the energy difference between the highest occupied molecular orbital of the polymer donor (EHOMO-D) and lowest unoccupied molecular orbital of the PCBM acceptor (ELUMO-A), obtained by photoemission spectroscopy in all polymer:PCBM blends has an excellent agreement with the extrapolated VOC at 0 K. Consequently, the photovoltage loss of various organic BHJ photovoltaic devices at room temperature is in a range of 0.3-0.6 V. It is believed that the demonstrated direct measurement approach of the energy level alignment in solution-processed organic BHJ will bring deeper insight into the origin of the VOC and the corresponding photovoltage loss mechanism in organic photovoltaic cells.

  18. A novel modeling methodology of open circuit voltage hysteresis for LiFePO4 batteries based on an adaptive discrete Preisach model

    International Nuclear Information System (INIS)

    Zhu, Letao; Sun, Zechang; Dai, Haifeng; Wei, Xuezhe

    2015-01-01

    Highlights: • An adaptive discrete Preisach model (ADPM) of OCV–SOC hysteresis is proposed. • The measured current is used to adjust the weight vector in the proposed ADPM. • A deformation algorithm of ADPM is developed for the accidental current errors. • The performance of ADPM under uncertainty of measured current is investigated. • The performance of ADPM under uncertainty of OCV is investigated. - Abstract: The relationship of open circuit voltage (OCV) versus state of charge (SOC) is critical for many techniques such as accurate battery modeling and reliable SOC estimation. However, the hysteresis existing in OCV–SOC curves of lithium-ion batteries complicates this relationship especially for lithium iron phosphate (LiFePO 4 ) batteries which exhibit a very flat OCV–SOC hysteretic feature. This paper aims at modeling the OCV–SOC hysteresis for LiFePO 4 batteries. The modeling approach is a novel adaptive discrete Preisach model (ADPM) based on the classic Preisach model and the least mean square (LMS) theory. To enhance the performance, the ADPM uses the measured current at each time step to adjust the weight vector. This method significantly decreases the errors (<1%) between the model predicted SOC and the true SOC acquired from experiments. A deformation algorithm of ADPM is further proposed to guarantee the performance even when large errors appear in the measured current. For further applications of the proposed ADPM such as SOC estimation, the robust performance of ADPM is also discussed when considering OCV input errors and measurement current errors. The results show that the maximum SOC calculation errors are about 6% and 5% respectively against uncertain OCV input and measured current which indicate the enormous potential of ADPM in battery management systems

  19. Enhancement of open-circuit voltage and the fill factor in CdTe nanocrystal solar cells by using interface materials

    International Nuclear Information System (INIS)

    Zhu, Jiaoyan; Yang, Yuehua; Gao, Yuping; Qin, Donghuan; Wu, Hongbin; Huang, Wenbo; Hou, Lintao

    2014-01-01

    Interface states influence the operation of nanocrystal (NC) solar cell carrier transport, recombination and energetic mechanisms. In a typical CdTe NC solar cell with a normal structure of a ITO/p-CdTe NCs/n-acceptor (or without)/Al configuration, the contact between the ITO and CdTe is a non-ohm contact due to a different work function (for an ITO, the value is ∼4.7 eV, while for CdTe NCs, the value is ∼5.3 eV), which results in an energetic barrier at the ITO/CdTe interface and decreases the performance of the NC solar cells. This work investigates how interface materials (including Au, MoO x and C 60 ) affect the performance of NC solar cells. It is found that devices with interface materials have shown higher V oc than those without interface materials. For the case in which we used Au as an interface, we obtained a high open-circuit voltage of 0.65 V, coupled with a high fill factor (62%); this resulted in a higher energy conversion efficiency (ECE) of 5.3%, which showed a 30% increase in the ECE compared with those without the interlayer. The capacitance measurements indicate that the increased V oc in the case in which Au was used as the interface is likely due to good ohm contact between the Au’s and the CdTe NCs’ thin film, which decreases the energetic barrier at the ITO/CdTe interface. (paper)

  20. Efficient Planar Structured Perovskite Solar Cells with Enhanced Open-Circuit Voltage and Suppressed Charge Recombination Based on a Slow Grown Perovskite Layer from Lead Acetate Precursor.

    Science.gov (United States)

    Li, Cong; Guo, Qiang; Wang, Zhibin; Bai, Yiming; Liu, Lin; Wang, Fuzhi; Zhou, Erjun; Hayat, Tasawar; Alsaedi, Ahmed; Tan, Zhan'ao

    2017-12-06

    For planar structured organic-inorganic hybrid perovskite solar cells (PerSCs) with the poly(3,4-ethylenedioxythiophene:polystyrene sulfonate) (PEDOT:PSS) hole transport layer, the open-circuit voltage (V oc ) of the device is limited to be about 1.0 V, resulting in inferior performance in comparison with TiO 2 -based planar counterparts. Therefore, increasing V oc of the PEDOT:PSS-based planar device is an important way to enhance the efficiency of the PerSCs. Herein, we demonstrate a novel approach for perovskite film formation and the film is formed by slow growth from lead acetate precursor via a one-step spin-coating process without the thermal annealing (TA) process. Because the perovskite layer grows slowly and naturally, high-quality perovskite film can be achieved with larger crystalline particles, less defects, and smoother surface morphology. Ultraviolet absorption, X-ray diffraction, scanning electron microscopy, steady-state fluorescence spectroscopy (photoluminescence), and time-resolved fluorescence spectroscopy are used to clarify the crystallinity, morphology, and internal defects of perovskite thin films. The power conversion efficiency of p-i-n PerSCs based on slow-grown film (16.33%) shows greatly enhanced performance compared to that of the control device based on traditional thermally annealed perovskite film (14.33%). Furthermore, the V oc of the slow-growing device reaches 1.12 V, which is 0.1 V higher than that of the TA device. These findings indicate that slow growth of the perovskite layer from lead acetate precursor is a promising approach to achieve high-quality perovskite film for high-performance PerSCs.

  1. Electrical circuit for checking the state of charge of a vehicle battery. Elektrische Schaltung zur Kontrolle des Ladezustandes einer Batterie in Kraftfahrzeugen

    Energy Technology Data Exchange (ETDEWEB)

    Gamulescu, A

    1981-05-27

    The invention concerns an electrical circuit for checking the state of charge of a vehicle battery. The circuit consists of a transistor, whose collector is connected via a series resistance and a Zener diode to the positive pole of the battery. The breakdown voltage of the Zener diode is about 12 volts. The emitter of the transistor is connected via an LED to earth. A second LED is connected in parallel with the collector-emitter circuit of the transistor, which works via a voltage divider. This voltage divider reduces the voltage at the LED with the transistor which is conducting to about 0.7 volts. A second Zener diode connected via a series resistance to the positive pole is also provided. Its breakdown voltage is 15 volts.

  2. Current limiter circuit system

    Science.gov (United States)

    Witcher, Joseph Brandon; Bredemann, Michael V.

    2017-09-05

    An apparatus comprising a steady state sensing circuit, a switching circuit, and a detection circuit. The steady state sensing circuit is connected to a first, a second and a third node. The first node is connected to a first device, the second node is connected to a second device, and the steady state sensing circuit causes a scaled current to flow at the third node. The scaled current is proportional to a voltage difference between the first and second node. The switching circuit limits an amount of current that flows between the first and second device. The detection circuit is connected to the third node and the switching circuit. The detection circuit monitors the scaled current at the third node and controls the switching circuit to limit the amount of the current that flows between the first and second device when the scaled current is greater than a desired level.

  3. Solid-state circuits

    CERN Document Server

    Pridham, G J

    2013-01-01

    Solid-State Circuits provides an introduction to the theory and practice underlying solid-state circuits, laying particular emphasis on field effect transistors and integrated circuits. Topics range from construction and characteristics of semiconductor devices to rectification and power supplies, low-frequency amplifiers, sine- and square-wave oscillators, and high-frequency effects and circuits. Black-box equivalent circuits of bipolar transistors, physical equivalent circuits of bipolar transistors, and equivalent circuits of field effect transistors are also covered. This volume is divided

  4. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.; Abdelghany, Mohamed A.; Elsayed, Mohannad Yomn; Elshurafa, Amro M; Salama, Khaled N.

    2014-01-01

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  5. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  6. Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

    KAUST Repository

    Petti, Luisa; Pattanasattayavong, Pichaya; Lin, Yen-Hung; Mü nzenrieder, Niko; Cantarella, Giuseppe; Yaacobi-Gross, Nir; Yan, Feng; Trö ster, Gerhard; Anthopoulos, Thomas D.

    2017-01-01

    , depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as −3.5 V. Importantly, discrete CuSCN transistors

  7. Suppressing voltage transients in high voltage power supplies

    International Nuclear Information System (INIS)

    Lickel, K.F.; Stonebank, R.

    1979-01-01

    A high voltage power supply for an X-ray tubes includes voltage adjusting means, a high voltage transformer, switch means connected to make and interrupt the primary current of the transformer, and over-voltage suppression means to suppress the voltage transient produced when the current is switched on. In order to reduce the power losses in the suppression means, an impedance is connected in the transformer primary circuit on operation of the switch means and is subsequently short-circuited by a switch controlled by a timer after a period which is automatically adjusted to the duration of the transient overvoltage. (U.K.)

  8. Asymptotic and numerical prediction of current-voltage curves for an organic bilayer solar cell under varying illumination and comparison to the Shockley equivalent circuit

    KAUST Repository

    Foster, J. M.; Kirkpatrick, J.; Richardson, G.

    2013-01-01

    In this study, a drift-diffusion model is used to derive the current-voltage curves of an organic bilayer solar cell consisting of slabs of electron acceptor and electron donor materials sandwiched together between current collectors. A simplified

  9. Fast-responding short circuit protection system with self-reset for use in circuit supplied by DC power

    Science.gov (United States)

    Burns, Bradley M. (Inventor); Blalock, Norman N. (Inventor)

    2011-01-01

    A short circuit protection system includes an inductor, a switch, a voltage sensing circuit, and a controller. The switch and inductor are electrically coupled to be in series with one another. A voltage sensing circuit is coupled across the switch and the inductor. A controller, coupled to the voltage sensing circuit and the switch, opens the switch when a voltage at the output terminal of the inductor transitions from above a threshold voltage to below the threshold voltage. The controller closes the switch when the voltage at the output terminal of the inductor transitions from below the threshold voltage to above the threshold voltage.

  10. Manufacturing technology for practical Josephson voltage normals

    International Nuclear Information System (INIS)

    Kohlmann, Johannes; Kieler, Oliver

    2016-01-01

    In this contribution we present the manufacturing technology for the fabrication of integrated superconducting Josephson serial circuits for voltage normals. First we summarize some foundations for Josephson voltage normals and sketch the concept and the setup of the circuits, before we describe the manufacturing technology form modern practical Josephson voltage normals.

  11. Bootstrapped Low-Voltage Analog Switches

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper

    1999-01-01

    Novel low-voltage constant-impedance analog switch circuits are proposed. The switch element is a single MOSFET, and constant-impedance operation is obtained using simple circuits to adjust the gate and bulk voltages relative to the switched signal. Low-voltage (1-volt) operation is made feasible...

  12. High-Voltage, Low-Power BNC Feedthrough Terminator

    Science.gov (United States)

    Bearden, Douglas

    2012-01-01

    This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

  13. Design of high voltage power supply of miniature X-ray tube based on resonant Royer

    International Nuclear Information System (INIS)

    Liu Xiyao; Zeng Guoqiang; Tan Chengjun; Luo Qun; Gong Chunhui; Huang Rui

    2013-01-01

    Background: In recent years, X rays are widely used in various fields. With the rapid development of national economy, the demand of high quality, high reliability, and high stability miniature X-ray tube has grown rapidly. As an important core component of miniature X-ray tube, high voltage power supply has attracted wide attention. Purpose: To match miniature, the high voltage power supply should be small, lightweight, good quality, etc. Based on the basic performance requirements of existing micro-X-ray tube high voltage power supply, this paper designs an output from 0 to -30 kV adjustable miniature X-ray tube voltage DC power supply. Compared to half-bridge and full-bridge switching-mode power supply, its driving circuit is simple. With working on the linear condition, it has no switching noise. Methods: The main circuit makes use of DC power supply to provide the energy. The resonant Royer circuit supplies sine wave which drives to the high frequency transformer's primary winding with resultant sine-like high voltage appearing across the secondary winding. Then, the voltage doubling rectifying circuit would achieve further boost. In the regulator circuit, a feedback control resonant transistor base current is adopted. In order to insulate air, a silicone rubber is used for high pressure part packaging, and the output voltage is measured by the dividing voltage below -5 kV. Results: The stability of circuit is better than 0.2%/6 h and the percent of the output ripple voltage is less than 0.3%. Keeping the output voltage constant, the output current can reach 57 μA by changing the size of load resistor. This high voltage power supply based on resonant Royer can meet the requirement of miniature X-ray tube. Conclusions: The circuit can satisfy low noise, low ripple, low power and high voltage regulator power supply design. However, its efficiency is not high enough because of the linear condition. In the next design, to further reduce power consumption, we

  14. Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

    Science.gov (United States)

    Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

    2017-02-09

    Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

  15. Effect of automated tube voltage selection, integrated circuit detector and advanced iterative reconstruction on radiation dose and image quality of 3rd generation dual-source aortic CT angiography: An intra-individual comparison.

    Science.gov (United States)

    Mangold, Stefanie; De Cecco, Carlo N; Wichmann, Julian L; Canstein, Christian; Varga-Szemes, Akos; Caruso, Damiano; Fuller, Stephen R; Bamberg, Fabian; Nikolaou, Konstantin; Schoepf, U Joseph

    2016-05-01

    To compare, on an intra-individual basis, the effect of automated tube voltage selection (ATVS), integrated circuit detector and advanced iterative reconstruction on radiation dose and image quality of aortic CTA studies using 2nd and 3rd generation dual-source CT (DSCT). We retrospectively evaluated 32 patients who had undergone CTA of the entire aorta with both 2nd generation DSCT at 120kV using filtered back projection (FBP) (protocol 1) and 3rd generation DSCT using ATVS, an integrated circuit detector and advanced iterative reconstruction (protocol 2). Contrast-to-noise ratio (CNR) was calculated. Image quality was subjectively evaluated using a five-point scale. Radiation dose parameters were recorded. All studies were considered of diagnostic image quality. CNR was significantly higher with protocol 2 (15.0±5.2 vs 11.0±4.2; p<.0001). Subjective image quality analysis revealed no significant differences for evaluation of attenuation (p=0.08501) but image noise was rated significantly lower with protocol 2 (p=0.0005). Mean tube voltage and effective dose were 94.7±14.1kV and 6.7±3.9mSv with protocol 2; 120±0kV and 11.5±5.2mSv with protocol 1 (p<0.0001, respectively). Aortic CTA performed with 3rd generation DSCT, ATVS, integrated circuit detector, and advanced iterative reconstruction allow a substantial reduction of radiation exposure while improving image quality in comparison to 120kV imaging with FBP. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

  16. Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

    KAUST Repository

    Petti, Luisa

    2017-03-17

    We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V−1 s−1 and 0.013 cm2 V−1 s−1, respectively, current on/off ratio in the range 102–104, and maximum operating voltages between −3.5 and −10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as −3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

  17. IE Information Notice No. 85-64: BBC Brown Boveri low-voltage K-line circuit breakers, with deficient overcurrent trip devices models OD-4 and 5

    International Nuclear Information System (INIS)

    Jordan, E.L.

    1992-01-01

    On May 13, 1985, BBC Brown Boveri Inc. (BBC) made a 10 CFR Part 21 report to the NRC concerning a deficiency in the Models OD-4 and OD-5 overcurrent trip devices installed on K-line circuit breakers. The affected breakers were manufactured by BBC from October 1983 to March 1985 and may have incorrect short time delay band levers (links) installed in electromechanical overcurrent trip device models OD-4 and OD-5. The incorrect link could limit the travel of the short time armature and cause the short time element to be inoperative in the maximum (MAX) band. The May 13, 1985, report recommended that all K-line circuit breakers with the OD-4 and OD-5 overcurrent trip devices and any spare OD-4 and OD-5 overcurrent trip devices that were manufactured between October 1983 and March 1985, be inspected for an incorrect short time delay band link. Licensees known by BBC to have purchased K-line breakers or spare OD-4 or OD-5 overcurrent trip devices were notified of the possible defect and instructions provided for their inspection. Enclosed is a list of utilities and related facilities that were notified by BBC. However, BBC advised the NRC that there is a possibility that other utilities could be using K-line circuit breakers with the suspect OD-4 and OD-5 overcurrent trip devices. Therefore, all licensees are being notified of this possible defect

  18. Symmetric voltage-controlled variable resistance

    Science.gov (United States)

    Vanelli, J. C.

    1978-01-01

    Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.

  19. Ultra Low-Voltage Energy Harvesting

    Science.gov (United States)

    2013-09-01

    if in a solar battery charger the level of illumination were to drop due to cloud cover, the diode would prevent discharging of the battery when...the source voltage becomes lower than battery voltage. The drawback of a simple circuit like this is that once the source voltage is lower than the...longer charged when the battery voltage is above the OV setting. Figure 13. Block diagram of BQ25504 circuit . (From [10]) 18 THIS PAGE

  20. Continental Divide Trail

    Data.gov (United States)

    Earth Data Analysis Center, University of New Mexico — This shapefile was created to show the proximity of the Continental Divide to the Continental Divide National Scenic Trail in New Mexico. This work was done as part...

  1. Timing divided attention.

    Science.gov (United States)

    Hogendoorn, Hinze; Carlson, Thomas A; VanRullen, Rufin; Verstraten, Frans A J

    2010-11-01

    Visual attention can be divided over multiple objects or locations. However, there is no single theoretical framework within which the effects of dividing attention can be interpreted. In order to develop such a model, here we manipulated the stage of visual processing at which attention was divided, while simultaneously probing the costs of dividing attention on two dimensions. We show that dividing attention incurs dissociable time and precision costs, which depend on whether attention is divided during monitoring or during access. Dividing attention during monitoring resulted in progressively delayed access to attended locations as additional locations were monitored, as well as a one-off precision cost. When dividing attention during access, time costs were systematically lower at one of the accessed locations than at the other, indicating that divided attention during access, in fact, involves rapid sequential allocation of undivided attention. We propose a model in which divided attention is understood as the simultaneous parallel preparation and subsequent sequential execution of multiple shifts of undivided attention. This interpretation has the potential to bring together diverse findings from both the divided-attention and saccade preparation literature and provides a framework within which to integrate the broad spectrum of divided-attention methodologies.

  2. Mitigation of voltage sags in the distribution system with dynamic voltage restorer

    International Nuclear Information System (INIS)

    Viglas, D.; Belan, A.

    2012-01-01

    Dynamic voltage restorer is a custom power device that is used to improve voltage sags or swells in electrical distribution system. The components of the Dynamic Voltage Restorer consist of injection transformers, voltage source inverter, passive filters and energy storage. The main function of the Dynamic voltage restorer is used to inject three phase voltage in series and in synchronism with the grid voltages in order to compensate voltage disturbances. This article deals with mitigation of voltage sags caused by three-phase short circuit. Dynamic voltage restorer is modelled in MATLAB/Simulink. (Authors)

  3. Fault clearance in medium-voltage networks using remote-monitored short-circuit alarms; Stoerungsbeseitigung im MS-Netz mit fernueberwachten Kurzschlussmeldern

    Energy Technology Data Exchange (ETDEWEB)

    Beran, B. [Reginalzentrum Neckar-Franken der EnBW Regional AG, Oehringen (Germany). Bereich Netzfuehrung; Deiss, R. [RBS Genius GmbH, Stuttgart (Germany). Bereich Korrosionsschutz und Gaslecksuche; Stibbe, T. [Phoenix Contact GmbH und Co KG, Blomberg (Lippe) (Germany). Vertrieb Deutschland

    2006-04-15

    In March 2005, a pilot project on remote monitoring of short-circuit alarms using GSM was started. In cooperation with RBS Genius GmbH (100 percent subsidiary of EnBW Regional AG) who already use a similar technology for controlling cathodic corrosion protection systems, and the EnBW-Regionalzentrum Neckar-Franken, the functionalities were specified. After only five months of development and assembly time, the first 15 units were installed in exposed and difficult-to-access sites. All sites were located along very long power lines in which localisation of the defect would be very time-consuming. (orig.)

  4. Relationship between open-circuit voltage in Cu(In,Ga)Se{sub 2} solar cell and peak position of (220/204) preferred orientation near its absorber surface

    Energy Technology Data Exchange (ETDEWEB)

    Chantana, J., E-mail: jakapan@fc.ritsumei.ac.jp; Minemoto, T. [Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577 (Japan); Watanabe, T.; Teraji, S.; Kawamura, K. [Environment and Energy Research Center, Nitto Denko Corporation, 2-8 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2013-11-25

    Cu(In,Ga)Se{sub 2} (CIGS) absorbers with various Ga/III, Ga/(In+Ga), profiles are prepared by the so-called “multi-layer precursor method” using multi-layer co-evaporation of material sources. It is revealed that open-circuit voltage (V{sub OC}) of CIGS solar cell is primarily dependent on averaged Ga/III near the surface of its absorber. This averaged Ga/III is well predicted by peak position of (220/204) preferred orientation of CIGS film near its surface investigated by glancing-incidence X-ray diffraction with 0.1° incident angle. Finally, the peak position of (220/204) preferred orientation is proposed as a measure of V{sub OC} before solar cell fabrication.

  5. Rational Design of High-Performance Wide-Bandgap (≈2 eV) Polymer Semiconductors as Electron Donors in Organic Photovoltaics Exhibiting High Open Circuit Voltages (≈1 V).

    Science.gov (United States)

    Chochos, Christos L; Katsouras, Athanasios; Gasparini, Nicola; Koulogiannis, Chrysanthos; Ameri, Tayebeh; Brabec, Christoph J; Avgeropoulos, Apostolos

    2017-01-01

    Systematic optimization of the chemical structure of wide-bandgap (≈2.0 eV) "donor-acceptor" copolymers consisting of indacenodithiophene or indacenodithieno[3,2-b]thiophene as the electron-rich unit and thieno[3,4-c]pyrrole-4,6-dione as the electron-deficient moiety in terms of alkyl side chain engineering and distance of the electron-rich and electron-deficient monomers within the repeat unit of the polymer chain results in high-performance electron donor materials for organic photovoltaics. Specifically, preliminary results demonstrate extremely high open circuit voltages (V oc s) of ≈1.0 V, reasonable short circuit current density (J sc ) of around 11 mA cm -2 , and moderate fill factors resulting in efficiencies close to 6%. All the devices are fabricated in an inverted architecture with the photoactive layer processed by doctor blade equipment, showing the compatibility with roll-to-roll large-scale manufacturing processes. From the correlation of the chemical structure-optoelectronic properties-photovoltaic performance, a rational guide toward further optimization of the chemical structure in this family of copolymers, has been achieved. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Photovoltaic Small Molecules of TPA(FxBT-T-Cz)3: Tuning Open-Circuit Voltage over 1.0 V for Their Organic Solar Cells by Increasing Fluorine Substitution.

    Science.gov (United States)

    Wang, Qiong; Duan, Linrui; Tao, Qiang; Peng, Wenhong; Chen, Jianhua; Tan, Hua; Yang, Renqiang; Zhu, Weiguo

    2016-11-09

    To simultaneously improve both open-circuit voltage (V oc ) and short-circuit current density (J sc ) for organic solar cells, a novel D(A-π-Ar) 3 type of photovoltaic small molecules of TPA(F x BT-T-3Cz) 3 was designed and synthesized, which contain central triphenylamine (TPA), terminal carbazole (Cz), armed fluorine-substituted benzothiadiazole (F x BT, where x = 1 or 2), and bridged thiophene (T) units. A narrowed ultraviolet-visible absorption and a decreasing highest occupied molecular orbital energy level were observed from TPA(F 1 BT-T-3Cz) 3 to TPA(F 2 BT-T-3Cz) 3 with increasing fluorine substitution. However, the TPA(F 2 BT-T-3Cz) 3 /PC 71 BM-based solar devices showed a rising V oc of 1.01 V and an enhanced J sc of 10.84 mA cm -2 as well as a comparable power conversion efficiency of 4.81% in comparison to the TPA(F 1 BT-T-3Cz) 3 /PC 71 BM-based devices. Furthermore, in comparison to the parent TPA(BT-T-3Cz) 3 molecule without fluorine substitution, the fluorine-substituted TPA(F x BT-T-3Cz) 3 molecules exhibited significantly incremental V oc and J sc values in their bulk heterojunction organic solar cells, owing to fluorine incorporation in the electron-deficient benzothiadiazole unit.

  7. Compact Unequal Power Divider with Filtering Response

    Directory of Open Access Journals (Sweden)

    Wei-Qiang Pan

    2015-01-01

    Full Text Available We present a novel unequal power divider with bandpass responses. The proposed power divider consists of five resonators and a resistor. The power division ratio is controlled by altering the coupling strength among the resonators. The output ports have the characteristic impedance of 50 Ω and impedance transformers in classical Wilkinson power dividers are not required in this design. Use of resonators enables the filtering function of the power divider. Two transmission zeros are generated near the passband edges, resulting in quasielliptic bandpass responses. For validation, a 2 : 1 filtering power divider is implemented. The fabricated circuit size is 0.22 λg × 0.08 λg, featuring compact size for unequal filtering power dividers, which is suitable for the feeding networks of antenna arrays.

  8. A novel ZVS high voltage power supply for micro-channel plate photomultiplier tubes

    Energy Technology Data Exchange (ETDEWEB)

    Pei, Chengquan [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’an 710049 (China); Tian, Jinshou [Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi' an 710119 (China); Liu, Zhen [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’an 710049 (China); Qin, Hong [School of Computer Science and Technology, Xi' an University of Science and Technology, Xi' an 710054 (China); Wu, Shengli, E-mail: slwu@mail.xjtu.edu.cn [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’an 710049 (China)

    2017-04-11

    A novel resonant high voltage power supply (HVPS) with zero voltage switching (ZVS), to reduce the voltage stress on switching devices and improve conversion efficiency, is proposed. The proposed HVPS includes a drive circuit, a transformer, several voltage multiplying circuits, and a regulator circuit. The HVPS contains several secondary windings that can be precisely regulated. The proposed HVPS performed better than the traditional resistor voltage divider, which requires replacing matching resistors resulting in resistor dispersibility in the Micro-Channel Plate (MCP). The equivalent circuit of the proposed HVPS was established and the operational principle analyzed. The entire switching element can achieve ZVS, which was validated by a simulation and experiments. The properties of this HVPS were tested including minimum power loss (240 mW), maximum power loss (1 W) and conversion efficiency (85%). The results of this research are that the proposed HVPS was suitable for driving the micro-channel plate photomultiplier tube (MCP-PMT). It was therefore adopted to test the MCP-PMT, which will be used in Daya Bay reactor neutrino experiment II in China.

  9. A novel ZVS high voltage power supply for micro-channel plate photomultiplier tubes

    International Nuclear Information System (INIS)

    Pei, Chengquan; Tian, Jinshou; Liu, Zhen; Qin, Hong; Wu, Shengli

    2017-01-01

    A novel resonant high voltage power supply (HVPS) with zero voltage switching (ZVS), to reduce the voltage stress on switching devices and improve conversion efficiency, is proposed. The proposed HVPS includes a drive circuit, a transformer, several voltage multiplying circuits, and a regulator circuit. The HVPS contains several secondary windings that can be precisely regulated. The proposed HVPS performed better than the traditional resistor voltage divider, which requires replacing matching resistors resulting in resistor dispersibility in the Micro-Channel Plate (MCP). The equivalent circuit of the proposed HVPS was established and the operational principle analyzed. The entire switching element can achieve ZVS, which was validated by a simulation and experiments. The properties of this HVPS were tested including minimum power loss (240 mW), maximum power loss (1 W) and conversion efficiency (85%). The results of this research are that the proposed HVPS was suitable for driving the micro-channel plate photomultiplier tube (MCP-PMT). It was therefore adopted to test the MCP-PMT, which will be used in Daya Bay reactor neutrino experiment II in China.

  10. Unequal Input Voltages Distribution Between the Serial Connected Halfbridges

    Directory of Open Access Journals (Sweden)

    Radovan Ovcarcik

    2006-01-01

    Full Text Available This paper describes a topology of DC-DC converter consisting in two serial connected half-bridges. Secondary circuit is realized like a conventional full-wave rectifier. The main advantage of this topology is the possibility of dividing the input voltage between the half-bridges. The converter is controlled using the phase-shift modulation, which allows a ZVSoperation mode. The voltage unbalance between the inputs causes an important problem of the presented topology. It is necessary to avoid it by the control algorithm, which is described in the text. The practical results show a zero voltage switching technique and the limits of the chosen topology and of the control.

  11. Low energy proton irradiation effects on InP/InGaAs DHBTs and InP-base frequency dividers

    Science.gov (United States)

    Zhang, Xingyao; Li, Yudong; Guo, Qi; Feng, Jie

    2018-03-01

    InP/InGaAs DHBTs and frequency dividers are irradiated by low energy proton, and displacement damage effect of the devices are analyzed. InP/InGaAs DHBTs has been made DC characteristics measurements, and the function measurement for frequency dividers has been done both before and after proton irradiation. The breakdown voltage of InP DHBTs drop to 3.7V When the fluence up to 5x1013 protons/cm2. Meanwhile, the function of frequency dividers get out of order. Degradation of DC characteristics of DHBTs are due to the radiation-induced defects in the quasi neutral base and the space charge region of base-collector and base-emitter junctions. The performance deterioration of DHBTs induce the fault of frequency dividers, and prescaler may be the most sensitive circuit.

  12. International Divider Walls

    NARCIS (Netherlands)

    Kruis, A.; Sneller, Lineke

    2013-01-01

    The subject of this teaching case is the Enterprise Resource Planning (ERP) system implementation at International Divider Walls, the world market leader in design, production, and sales of divider walls. The implementation in one of the divisions of this multinational company had been successful,

  13. Resilient architecture design for voltage variation

    CERN Document Server

    Reddi, Vijay Janapa

    2013-01-01

    Shrinking feature size and diminishing supply voltage are making circuits sensitive to supply voltage fluctuations within the microprocessor, caused by normal workload activity changes. If left unattended, voltage fluctuations can lead to timing violations or even transistor lifetime issues that degrade processor robustness. Mechanisms that learn to tolerate, avoid, and eliminate voltage fluctuations based on program and microarchitectural events can help steer the processor clear of danger, thus enabling tighter voltage margins that improve performance or lower power consumption. We describe

  14. Superconducting push-pull flux quantum logic circuits

    International Nuclear Information System (INIS)

    Murphy, J.H.; Daniel, M.R.; Przybysz, J.X.

    1993-01-01

    A superconducting digital logic circuit is described comprising: a first circuit branch including first and second Josephson junctions electrically connected in series with each other; means for applying a positive bias voltage to a first end of said circuit branch; means for applying a negative bias voltage to a second end of said circuit branch; means for applying a first dual polarity input voltage signal to a first node in said circuit branch; and means for extracting a first output voltage signal from said first node in said circuit branch

  15. Circuit analysis with Multisim

    CERN Document Server

    Baez-Lopez, David

    2011-01-01

    This book is concerned with circuit simulation using National Instruments Multisim. It focuses on the use and comprehension of the working techniques for electrical and electronic circuit simulation. The first chapters are devoted to basic circuit analysis.It starts by describing in detail how to perform a DC analysis using only resistors and independent and controlled sources. Then, it introduces capacitors and inductors to make a transient analysis. In the case of transient analysis, it is possible to have an initial condition either in the capacitor voltage or in the inductor current, or bo

  16. Short-circuit impedance measurement

    DEFF Research Database (Denmark)

    Pedersen, Knud Ole Helgesen; Nielsen, Arne Hejde; Poulsen, Niels Kjølstad

    2003-01-01

    Methods for estimating the short-circuit impedance in the power grid are investigated for various voltage levels and situations. The short-circuit impedance is measured, preferably from naturally occurring load changes in the grid, and it is shown that such a measurement system faces different...

  17. Cell short circuit, preshort signature

    Science.gov (United States)

    Lurie, C.

    1980-01-01

    Short-circuit events observed in ground test simulations of DSCS-3 battery in-orbit operations are analyzed. Voltage signatures appearing in the data preceding the short-circuit event are evaluated. The ground test simulation is briefly described along with performance during reconditioning discharges. Results suggest that a characteristic signature develops prior to a shorting event.

  18. Source-circuit design overview

    Science.gov (United States)

    Ross, R. G., Jr.

    1983-01-01

    The source circuit is the fundamental electrical building block of a large central-station array; it consists of a series-parallel network of solar cells that develops full system voltage. The array field is generally made up of a large number of parallel source circuits. Source-circuit electrical configuration is driven by a number of design considerations, which must be considered simultaneously. Array fault tolerance and hot spot heating endurance are examined in detail.

  19. Pulse-voltage fast generator

    International Nuclear Information System (INIS)

    Valeev, R.I.; Nikiforov, M.G.; Kharchenko, A.F.

    1988-01-01

    The design is described and the test results of a four-channel pulse-voltage generator with maximum output voltage 200 kV are presented. The measurement results of generator triggering time depending on the value and polarity of the triggering voltage pulse for different triggering circuits are presented. The tests have shown stable triggering of all four channels of the generator in the range up to 40 % from selfbreakdown voltage. The generator triggering delay in the given range is <25 ns, asynchronism in channel triggering is <±1 ns

  20. Design of an improved RCD buffer circuit for full bridge circuit

    Science.gov (United States)

    Yang, Wenyan; Wei, Xueye; Du, Yongbo; Hu, Liang; Zhang, Liwei; Zhang, Ou

    2017-05-01

    In the full bridge inverter circuit, when the switch tube suddenly opened or closed, the inductor current changes rapidly. Due to the existence of parasitic inductance of the main circuit. Therefore, the surge voltage between drain and source of the switch tube can be generated, which will have an impact on the switch and the output voltage. In order to ab sorb the surge voltage. An improve RCD buffer circuit is proposed in the paper. The peak energy will be absorbed through the buffer capacitor of the circuit. The part energy feedback to the power supply, another part release through the resistor in the form of heat, and the circuit can absorb the voltage spikes. This paper analyzes the process of the improved RCD snubber circuit, According to the specific parameters of the main circuit, a reasonable formula for calculating the resistance capacitance is given. A simulation model will be modulated in Multisim, which compared the waveform of tube voltage and the output waveform of the circuit without snubber circuit with the improved RCD snubber circuit. By comparing and analyzing, it is proved that the improved buffer circuit can absorb surge voltage. Finally, experiments are demonstrated to validate that the correctness of the RC formula and the improved RCD snubber circuit.

  1. Electron-deficient N-alkyloyl derivatives of thieno[3,4-c]pyrrole-4,6-dione yield efficient polymer solar cells with open-circuit voltages > 1 v

    KAUST Repository

    Warnan, Julien

    2014-05-13

    Poly(benzo[1,2-b:4,5-b′]dithiophene-thieno[3,4-c]pyrrole-4,6-dione) (PBDTTPD) polymer donors yield some of the highest open-circuit voltages (V OC, ca. 0.9 V) and fill factors (FF, ca. 70%) in conventional bulk-heterojunction (BHJ) solar cells with PCBM acceptors. Recent work has shown that the incorporation of ring substituents into the side chains of the BDT motifs in PBDTTPD can induce subtle variations in material properties, resulting in an increase of the BHJ device VOC to ∼1 V. In this contribution, we report on the synthesis of N-alkyloyl-substituted TPD motifs (TPD(CO)) and show that the electron-deficient motifs can further lower both the polymer LUMO and HOMO levels, yielding device VOC > 1 V (up to ca. 1.1 V) in BHJ solar cells with PCBM. Despite the high VOC achieved (i.e., low polymer HOMO), BHJ devices cast from TPD(CO)-based polymer donors can reach power conversion efficiencies (PCEs) of up to 6.7%, making these promising systems for use in the high-band-gap cell of tandem solar cells. © 2014 American Chemical Society.

  2. Effects of the charge-transfer reorganization energy on the open-circuit voltage in small-molecular bilayer organic photovoltaic devices: comparison of the influence of deposition rates of the donor.

    Science.gov (United States)

    Lee, Chih-Chien; Su, Wei-Cheng; Chang, Wen-Chang

    2016-05-14

    The theoretical maximum of open-circuit voltage (VOC) of organic photovoltaic (OPV) devices has yet to be determined, and its origin remains debated. Here, we demonstrate that VOC of small-molecule OPV devices can be improved by controlling the deposition rate of a donor without changing the interfacial energy gap at the donor/acceptor interface. The measurement of external quantum efficiency and electroluminescence spectra facilitates the observation of the existence of charge transfer (CT) states. A simplified approach by reusing the reciprocity relationship for obtaining the properties of the CT states is proposed without introducing complex techniques. We compare experimental and fitting results and propose that reorganization energy is the primary factor in determining VOC instead of either the CT energy or electronic coupling term in bilayer OPV devices. Atomic force microscopy images indicate a weak molecular aggregation when a higher deposition rate is used. The results of temperature-dependent measurements suggest the importance of molecular stacking for the CT properties.

  3. Dependence of open-circuit voltage of SnO2-nSi solar cells; SnO2-nSi taiyo denchi no sanka ondo menhoi izonsei

    Energy Technology Data Exchange (ETDEWEB)

    Shinoda, S; Shimizu, A; Yano, K; Kasuga, M [Yamanashi University, Yamanashi (Japan). Faculty of Engineering

    1997-11-25

    Although metal(or semiconductor)-semiconductor solar cells, SnO2-nSi solar cell for example, are superior in cost and efficiency, its barrier height and open-circuit voltage V(oc) are lower than those of p-n junctions. To improve these defects, study was made on the dependence of V(oc) on oxidation temperature and surface orientation using various solar cells prepared from (100)Si and (111)Si under various oxidation conditions. As a result, the density of surface states increases with a decrease in oxidation temperature of Si substrates, resulting in an increase in diode factor and V(oc). In this case, since oxide films are extremely thin and contribution of non-terminated bonds is large in the initial oxidation stage, the quantity of dangling bonds is larger in (100) plane than (111) plane, resulting in an increase in diode factor and V(oc). Since the surface energy level (the degree of electrons dominated by acceptor-like surface state from this level to the top of a valence band) of (100) Si is lower than that of (111) Si, the effective barrier height and V(oc) increase. 28 refs., 6 figs., 2 tabs.

  4. The Great Divide

    Science.gov (United States)

    Robelen, Erik W.

    2005-01-01

    Steps away from where a concrete wall once divided this city east from west, a group of Muslim 1st graders at E.O. Plauen Elementary School sing a phrase that is unfamiliar to most German ears. Though the Roman Catholic and Protestant churches have long provided voluntary religion classes in Berlin schools, only recently have the courts allowed an…

  5. A Town Divided

    OpenAIRE

    Waldron, Lucas H

    2018-01-01

    Residents of rural Patagonia, AZ are bitterly divided over mining. Half of the town supports Arizona Mining Inc., a Canadian mining company that bought up land near town for vast exploratory drilling. The other half of the town is fighting the mining company at every turn, seeking to preserve the region's unique wildlife and steer the economy toward environmental restoration.

  6. Oscillator circuits

    CERN Document Server

    Graf, Rudolf F

    1996-01-01

    This series of circuits provides designers with a quick source for oscillator circuits. Why waste time paging through huge encyclopedias when you can choose the topic you need and select any of the specialized circuits sorted by application?This book in the series has 250-300 practical, ready-to-use circuit designs, with schematics and brief explanations of circuit operation. The original source for each circuit is listed in an appendix, making it easy to obtain additional information.Ready-to-use circuits.Grouped by application for easy look-up.Circuit source listing

  7. Measuring circuits

    CERN Document Server

    Graf, Rudolf F

    1996-01-01

    This series of circuits provides designers with a quick source for measuring circuits. Why waste time paging through huge encyclopedias when you can choose the topic you need and select any of the specialized circuits sorted by application?This book in the series has 250-300 practical, ready-to-use circuit designs, with schematics and brief explanations of circuit operation. The original source for each circuit is listed in an appendix, making it easy to obtain additional information.Ready-to-use circuits.Grouped by application for easy look-up.Circuit source listings

  8. Modern TTL circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Modern TTL Circuits Manual provides an introduction to the basic principles of Transistor-Transistor Logic (TTL). This book outlines the major features of the 74 series of integrated circuits (ICs) and introduces the various sub-groups of the TTL family.Organized into seven chapters, this book begins with an overview of the basics of digital ICs. This text then examines the symbology and mathematics of digital logic. Other chapters consider a variety of topics, including waveform generator circuitry, clocked flip-flop and counter circuits, special counter/dividers, registers, data latches, com

  9. Ignition circuit for combustion engines

    Energy Technology Data Exchange (ETDEWEB)

    Becker, H W

    1977-05-26

    The invention refers to the ignition circuit for combustion engines, which are battery fed. The circuit contains a transistor and an oscillator to produce an output voltage on the secondary winding of an output transformer to supply an ignition current. The plant is controlled by an interrupter. The purpose of the invention is to form such a circuit that improved sparks for ignition are produced, on the one hand, and that on the other hand, the plant can continue to function after loss of the oscillator. The problem is solved by the battery and the secondary winding of the output transformers of the oscillator are connected via a rectifier circuit to produce a resultant total voltage with the ignition coil from the battery voltage and the rectified pulsating oscillator output.

  10. A Simple Square Rooting Circuit Based on Operational Amplifiers (OPAMPs

    Directory of Open Access Journals (Sweden)

    K. C. Selvam

    2013-02-01

    Full Text Available A simple circuit which accepts a negative voltage as input and provides an output voltage equal to the square root of the input voltage is described in this paper. The square rooting operation is dependent only on the ratio of two resistors and a DC voltage. Hence, the required accuracy can be obtained by employing precision resistors and a stable reference voltage. The feasibility of the circuit is examined by testing the results on a proto type.

  11. Filament supply circuit for particle accelerator

    International Nuclear Information System (INIS)

    Thompson, C.C. Jr.; Malone, H.F.

    1975-01-01

    In a particle accelerator of the type employing ac primary power and a voltage multiplication apparatus to achieve the required high dc accelerating voltage, a filament supply circuit is powered by a portion of the ac primary power appearing at the last stage of the voltage multiplier. This ac power is applied across a voltage regulator circuit in the form of two zener diodes connected back to back. The threshold of the zeners is below the lowest peak-to-peak voltage of the ac voltage, so that the regulated voltage remains constant for all settings of the adjustable acceleration voltage. The regulated voltage is coupled through an adjustable resistor and an impedance-matching transformer to the accelerator filament. (auth)

  12. Facebook's gender divide

    OpenAIRE

    Garcia, David; Kassa, Yonas Mitike; Cuevas, Angel; Cebrian, Manuel; Moro, Esteban; Rahwan, Iyad; Cuevas, Ruben

    2017-01-01

    Online social media are information resources that can have a transformative power in society. While the Web was envisioned as an equalizing force that allows everyone to access information, the digital divide prevents large amounts of people from being present online. Online social media in particular are prone to gender inequality, an important issue given the link between social media use and employment. Understanding gender inequality in social media is a challenging task due to the neces...

  13. Logarithmic circuit with wide dynamic range

    Science.gov (United States)

    Wiley, P. H.; Manus, E. A. (Inventor)

    1978-01-01

    A circuit deriving an output voltage that is proportional to the logarithm of a dc input voltage susceptible to wide variations in amplitude includes a constant current source which forward biases a diode so that the diode operates in the exponential portion of its voltage versus current characteristic, above its saturation current. The constant current source includes first and second, cascaded feedback, dc operational amplifiers connected in negative feedback circuit. An input terminal of the first amplifier is responsive to the input voltage. A circuit shunting the first amplifier output terminal includes a resistor in series with the diode. The voltage across the resistor is sensed at the input of the second dc operational feedback amplifier. The current flowing through the resistor is proportional to the input voltage over the wide range of variations in amplitude of the input voltage.

  14. MOSFET analog memory circuit achieves long duration signal storage

    Science.gov (United States)

    1966-01-01

    Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches, triggered by an external voltage-sensing device.

  15. Trigger circuit

    International Nuclear Information System (INIS)

    Verity, P.R.; Chaplain, M.D.; Turner, G.D.J.

    1984-01-01

    A monostable trigger circuit comprises transistors TR2 and TR3 arranged with their collectors and bases interconnected. The collector of the transistor TR2 is connected to the base of transistor TR3 via a capacitor C2 the main current path of a grounded base transistor TR1 and resistive means R2,R3. The collector of transistor TR3 is connected to the base of transistor TR2 via resistive means R6, R7. In the stable state all the transistors are OFF, the capacitor C2 is charged, and the output is LOW. A positive pulse input to the base of TR2 switches it ON, which in turn lowers the voltage at points A and B and so switches TR1 ON so that C2 can discharge via R2, R3, which in turn switches TR3 ON making the output high. Thus all three transistors are latched ON. When C2 has discharged sufficiently TR1 switches OFF, followed by TR3 (making the output low again) and TR2. The components C1, C3 and R4 serve to reduce noise, and the diode D1 is optional. (author)

  16. Modular high voltage power supply for chemical analysis

    Science.gov (United States)

    Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

    2008-07-15

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  17. Monitoring the digital divide

    International Nuclear Information System (INIS)

    Canessa, E.; Cerdeira, H.A.; Matthews, W.; Cottrell, R.L.

    2003-05-01

    It is increasingly important to support the large numbers of scientists working in remote areas and having low-bandwidth access to the Internet. This will continue to be the case for years to come since there is evidence from PingER performance measurements that the, so-called, digital divide is not decreasing. In this work, we review the collaborative work of The Abdus Salam International Center for Theoretical Physics (ICTP) in Trieste - a leading organization promoting science dissemination in the developing world- and SLAC in Stanford, to monitor by PingER, Universities and Research Institutions all over the developing world following the recent 'Recommendations of Trieste' to help bridge the digital divide. As a result, PingER's deployment now covers the real-time monitoring of worldwide Internet performance and, in particular, West and Central Africa for the first time. We report on the results from the ICTP sites and quantitatively identify regions with poor performance, identify trends, discuss experiences and future work. (author)

  18. Monitoring the Digital Divide

    International Nuclear Information System (INIS)

    Cottrell, Les

    2003-01-01

    It is increasingly important to support the large numbers of scientists working in remote areas and having low bandwidth access to the Internet. This will continue to be the case for years to come since there is evidence from PingER performance measurements that the, so-called, digital divide is not decreasing. In this work, we review the collaborative work of The Abdus Salam International Center for Theoretical Physics (ICTP) in Trieste, a leading organization promoting science dissemination in the developing world- and SLAC in Stanford, to monitor by PingER, Universities and Research Institutions all over the developing world following the recent ''Recommendations of Trieste'' to help bridge the digital divide. As a result, PingER's deployment now covers the real-time monitoring of worldwide Internet performance and, in particular, West and Central Africa for the first time. We report on the results from the ICTP sites and quantitatively identify regions with poor performance, identify trends, discuss experiences and future work

  19. Quasi-Linear Circuit

    Science.gov (United States)

    Bradley, William; Bird, Ross; Eldred, Dennis; Zook, Jon; Knowles, Gareth

    2013-01-01

    This work involved developing spacequalifiable switch mode DC/DC power supplies that improve performance with fewer components, and result in elimination of digital components and reduction in magnetics. This design is for missions where systems may be operating under extreme conditions, especially at elevated temperature levels from 200 to 300 degC. Prior art for radiation-tolerant DC/DC converters has been accomplished utilizing classical magnetic-based switch mode converter topologies; however, this requires specific shielding and component de-rating to meet the high-reliability specifications. It requires complex measurement and feedback components, and will not enable automatic re-optimization for larger changes in voltage supply or electrical loading condition. The innovation is a switch mode DC/DC power supply that eliminates the need for processors and most magnetics. It can provide a well-regulated voltage supply with a gain of 1:100 step-up to 8:1 step down, tolerating an up to 30% fluctuation of the voltage supply parameters. The circuit incorporates a ceramic core transformer in a manner that enables it to provide a well-regulated voltage output without use of any processor components or magnetic transformers. The circuit adjusts its internal parameters to re-optimize its performance for changes in supply voltage, environmental conditions, or electrical loading at the output

  20. An InGaAs/InP 40 GHz CML static frequency divider

    International Nuclear Information System (INIS)

    Su Yongbo; Jin Zhi; Cheng Wei; Ge Ji; Wang Xiantai; Chen Gaopeng; Liu Xinyu; Xu Anhuai; Qi Ming

    2011-01-01

    Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technology's ability to implement high speed digital and integrated high performance mixed-signal circuits. We report a 2 : 1 static frequency divider in InGaAs/InP heterojunction bipolar transistor technology. This is the first InP based digital integrated circuit ever reported on the mainland of China. The divider is implemented in differential current mode logic (CML) with 30 transistors. The circuit operated at a peak clock frequency of 40 GHz and dissipated 650 mW from a single -5 V supply. (semiconductor integrated circuits)

  1. A High Voltage Swing 1.9 GHz PA in Standard CMOS

    NARCIS (Netherlands)

    Aartsen, W.A.J.; Annema, Anne J.; Nauta, Bram

    2002-01-01

    A circuit technique for RF power amplifiers that reliably handle voltage peaks well above the nominal supply voltage is presented. To achieve this high-voltage tolerance the circuit implements switched-cascode transistors that yield reliable operation for voltages up to 7V at RF frequencies in a

  2. What's new about generator circuit breakers

    International Nuclear Information System (INIS)

    Kolarik, P.L.

    1979-01-01

    The need for updating ANSI C37 Standards for AC high-voltage circuit breakers has become necessary because of the increased interest in power circuit breakers for generator application. These circuit breakers, which have continuous current ratings and rated short-circuit currents that are much higher than those presently covered by existing C37 Standards, take on added importance because they are being installed in critical AC power supplies at nuclear power stations

  3. Trip electrical circuit of the gyrotion

    International Nuclear Information System (INIS)

    Rossi, J.O.

    1987-09-01

    The electron cyclotron resonance heating system of INPE/LAP is shown and the trip electrical circuit of the gyrotron is described, together with its fundamental aspects. The trip electrical circuit consists basically of a series regulator circuit which regulates the output voltage level and controls the pulse width time. Besides that, a protection circuit for both tubes, regulator and gyrotron, against faults in the system. (author) [pt

  4. Bridging the Digital Divide

    DEFF Research Database (Denmark)

    Frølunde, Lisbeth

    2002-01-01

    The article concerns the digital divide, meaning the social inequity in the access and the opportunities for gaining competencies with ICT (information and communication technologies). Problematic issues are highlighted in relation to experiences during visits to several Computer Clubhouses......, a network of multimedia workshops for youth in the USA. There are references to the learning philosophy Constructionism, which originates from MIT Media Lab and is the basis for the Computer Clubhouse project. Abstract : The consortium for Math and Science at Learning Lab Denmark and the Ministry...... of Education have published the white book 'Life of Science - White Book on Educational Initiatives in the Natural Sciences and Technology', inconnection with a conference for EIST (Initiatives in Science and Technology). The purpose of the EIST project is to make a qualitative overview of a number...

  5. Power-MOSFET Voltage Regulator

    Science.gov (United States)

    Miller, W. N.; Gray, O. E.

    1982-01-01

    Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

  6. Integrated coherent matter wave circuits

    International Nuclear Information System (INIS)

    Ryu, C.; Boshier, M. G.

    2015-01-01

    An integrated coherent matter wave circuit is a single device, analogous to an integrated optical circuit, in which coherent de Broglie waves are created and then launched into waveguides where they can be switched, divided, recombined, and detected as they propagate. Applications of such circuits include guided atom interferometers, atomtronic circuits, and precisely controlled delivery of atoms. We report experiments demonstrating integrated circuits for guided coherent matter waves. The circuit elements are created with the painted potential technique, a form of time-averaged optical dipole potential in which a rapidly moving, tightly focused laser beam exerts forces on atoms through their electric polarizability. Moreover, the source of coherent matter waves is a Bose-Einstein condensate (BEC). Finally, we launch BECs into painted waveguides that guide them around bends and form switches, phase coherent beamsplitters, and closed circuits. These are the basic elements that are needed to engineer arbitrarily complex matter wave circuitry

  7. Electric Vehicle Interaction at the Electrical Circuit Level

    Science.gov (United States)

    2018-01-01

    The objective of the Electric Vehicle Interaction at the Electrical Circuit Level project was to investigate electric vehicle (EV) charging as a means of mitigating transient over-voltages (TOVs) on the circuit level electric utility distribution gri...

  8. 30 CFR 75.800-1 - Circuit breakers; location.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Circuit breakers; location. 75.800-1 Section 75.800-1 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR COAL MINE SAFETY... § 75.800-1 Circuit breakers; location. Circuit breakers protecting high-voltage circuits entering an...

  9. Measurement Error Estimation for Capacitive Voltage Transformer by Insulation Parameters

    Directory of Open Access Journals (Sweden)

    Bin Chen

    2017-03-01

    Full Text Available Measurement errors of a capacitive voltage transformer (CVT are relevant to its equivalent parameters for which its capacitive divider contributes the most. In daily operation, dielectric aging, moisture, dielectric breakdown, etc., it will exert mixing effects on a capacitive divider’s insulation characteristics, leading to fluctuation in equivalent parameters which result in the measurement error. This paper proposes an equivalent circuit model to represent a CVT which incorporates insulation characteristics of a capacitive divider. After software simulation and laboratory experiments, the relationship between measurement errors and insulation parameters is obtained. It indicates that variation of insulation parameters in a CVT will cause a reasonable measurement error. From field tests and calculation, equivalent capacitance mainly affects magnitude error, while dielectric loss mainly affects phase error. As capacitance changes 0.2%, magnitude error can reach −0.2%. As dielectric loss factor changes 0.2%, phase error can reach 5′. An increase of equivalent capacitance and dielectric loss factor in the high-voltage capacitor will cause a positive real power measurement error. An increase of equivalent capacitance and dielectric loss factor in the low-voltage capacitor will cause a negative real power measurement error.

  10. The voltage—current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

    International Nuclear Information System (INIS)

    Bao Bo-Cheng; Feng Fei; Dong Wei; Pan Sai-Hu

    2013-01-01

    A flux-controlled memristor characterized by smooth cubic nonlinearity is taken as an example, upon which the voltage—current relationships (VCRs) between two parallel memristive circuits — a parallel memristor and capacitor circuit (the parallel MC circuit), and a parallel memristor and inductor circuit (the parallel ML circuit) — are investigated. The results indicate that the VCR between these two parallel memristive circuits is closely related to the circuit parameters, and the frequency and amplitude of the sinusoidal voltage stimulus. An equivalent circuit model of the memristor is built, upon which the circuit simulations and experimental measurements of both the parallel MC circuit and the parallel ML circuit are performed, and the results verify the theoretical analysis results

  11. Characterization of the voltage control systems and speed of a synchronous machine of high power for short circuit testing; Caracterizacion de los sistemas de control de voltaje y velocidad de una maquina sincrona de alta potencia para pruebas de corto circuito

    Energy Technology Data Exchange (ETDEWEB)

    Segura Ozuna, Victor Octavio; Hernandez Rodriguez, Isaura Victoria; Alcaide Godinez, Indira Xochiquetzal; Garduno Ramirez, Raul; Montero Cervantes, Julio Cesar [Instituto de Investigaciones Electricas, Cuernavaca, Morelos (Mexico); Ruiz Rodriguez, Genaro; Martinez Torres; Ricardo [CFE-LAPEM, Irapuato, Guanajuato (Mexico)

    2012-07-01

    This paper introduces a characterization of the behavior of the speed and voltage control systems of a special purpose synchronous machine (GCC) based on measuring and monitoring physical signals, and recording of the sampled waveforms. Basically, the GCC supplies the energy to perform high-power short-circuits tests to certify electrical equipment and components, as required by the Comision Federal de Electricidad (CFE) in Mexico. The GCC operates alternately as motor and generator. With the GCC operating as motor, speed control during startup, acceleration, re-acceleration and braking is carried out by a static frequency converter (SFC). Complementary, the voltage controller manipulates excitation power to control terminal voltage when the GCC operates as generator and regulates excitation current when the GCC operates as motor. Compared to conventional voltage regulation systems, which must go off in case of short-circuit, the GCC voltage regulator must keep controlling field excitation to maintain the required line current and terminal voltage during short-circuit tests. Monitoring of physical signals was carried out with a portable data acquisition system based on SCXI and PXI digital platforms. A total of 78 signals were monitored with a 6 kHz sampling rate that was enough to obtain detailed signal waveforms. Data captured was processed and plotted for analysis. The signal graphs show the current real behavior of both, the voltage control system and the speed control system, and constitute a precise characterization of their behavior. [Spanish] Este documento presenta una caracterizacion del comportamiento de los sistemas de control de velocidad y voltaje de una maquina sincrona de proposito especial (GCC) basada en la medicion y monitoreo de senales fisicas, asi como en el registro de las formas de onda muestreadas. Basicamente, la GCC suministra la energia para efectuar pruebas de corto circuito de alta potencia para certificar equipo y componentes

  12. Measurements of Voltage Harmonics in 400 kV Transmission Network

    Directory of Open Access Journals (Sweden)

    Ryszard Pawełek

    2014-06-01

    Full Text Available The paper deals with the analysis of voltage harmonics measurements performed in the 400 kV transmission network. The voltage was measured by means of three transducers: resistive voltage divider, inductive measuring transformer and capacitive voltage measuring transformer. Instrument errors were estimated for measuring transformers with reference to the harmonic values obtained from the voltage divider.

  13. Um critério para determinar a regulagem da tensão em soldagem MIG/MAG por curto-circuito A criterion to determine voltage setting in short-circuit GMAW

    Directory of Open Access Journals (Sweden)

    Gabriel Maradei Carneiro de Rezende

    2011-06-01

    Full Text Available Este trabalho apresenta um estudo exploratório sobre um critério denominado "Critério Laprosolda para Estabilidade de Transferência em MIG/MAG com curto-circuito", o qual tem por finalidade uma análise quantitativa da regularidade da transferência metálica para regulagem de parâmetros para soldagem MIG/MAG por curto circuito convencional. Inicialmente é apresentado o embasamento para elaboração deste critério. A avaliação da confiabilidade do mesmo foi feita por meio de soldagens e comparações dos resultados com o rendimento de deposição e com as características geométricas do cordão de solda. Para isto, chapas de teste com 3,18 mm de espessura e abertura de raiz de 1 mm entre elas foram soldadas, dentro dos mesmos parâmetros de corrente e velocidade de alimentação, usando arame AWS ER70S-6 de 1,2 mm de diâmetro protegido pela mistura Argônio 85% - Dióxido de Carbono 15%. Para atender a relação proposta, varreu-se a regulagem de tensões de soldagem desde valores muito baixos até muito altos para o que se esperava para esta condição de soldagem. Os resultados confirmam a efetividade do "Índice de Regularidade" como meio de avaliar regulagens de soldagem MIG/MAG visando minimizar respingos e otimizar o acabamento do cordão.This paper presents an exploratory study on a criterion called "Criterion for Stability Laprosolda Transfer in MIG / MAG with short circuit", which aims at a quantitative analysis of the regularity of metal transfer for setting parameters for MIG / MAG conventional in short circuit. Initially it is stated the foundation for development of this criterion. The evaluation of that was made by welding and comparisons of results with the efficiency of deposition and the geometric characteristics of the weld bead. For this, the test plates with 3.18 mm thick and 1 mm gap between them was welded in the same range of current and feeding speed, using wire AWS ER70S-6 1.2 mm of diameter protected by the

  14. Why do bacteria divide?

    Science.gov (United States)

    Norris, Vic

    2015-01-01

    The problem of not only how but also why cells divide can be tackled using recent ideas. One idea from the origins of life – Life as independent of its constituents – is that a living entity like a cell is a particular pattern of connectivity between its constituents. This means that if the growing cell were just to get bigger the average connectivity between its constituents per unit mass – its cellular connectivity – would decrease and the cell would lose its identity. The solution is division which restores connectivity. The corollary is that the cell senses decreasing cellular connectivity and uses this information to trigger division. A second idea from phenotypic diversity – Life on the Scales of Equilibria – is that a bacterium must find strategies that allow it to both survive and grow. This means that it has learnt to reconcile the opposing constraints that these strategies impose. The solution is that the cell cycle generates daughter cells with different phenotypes based on sufficiently complex equilibrium (E) and non-equilibrium (NE) cellular compounds and structures appropriate for survival and growth, respectively, alias ‘hyperstructures.’ The corollary is that the cell senses both the quantity of E material and the intensity of use of NE material and then uses this information to trigger the cell cycle. A third idea from artificial intelligence – Competitive Coherence – is that a cell selects the active subset of elements that actively determine its phenotype from a much larger set of available elements. This means that the selection of an active subset of a specific size and composition must be done so as to generate both a coherent cell state, in which the cell’s contents work together harmoniously, and a coherent sequence of cell states, each coherent with respect to itself and to an unpredictable environment. The solution is the use of a range of mechanisms ranging from hyperstructure dynamics to the cell cycle itself. PMID

  15. A new AC driving circuit for a top emission AMOLED

    International Nuclear Information System (INIS)

    Zhang Yongwen; Chen Wenbin; Liu Haohan

    2013-01-01

    A new voltage programmed pixel circuit with top emission design for active-matrix organic light-emitting diode (AMOLED) displays is presented and verified by HSPICE simulations. The proposed pixel circuit consists of five poly-Si TFTs, and can effectively compensate for the threshold voltage variation of the driving TFT. Meanwhile, the proposed pixel circuit offers an AC driving mode for the OLED by the two adjacent pulse voltage sources, which can suppress the degradation of the OLED. Moreover, a high contrast ratio can be achieved by the proposed pixel circuit since the OLED does not emit any light except for the emission period. (semiconductor integrated circuits)

  16. Modeling and Simulation of Low Voltage Arcs

    NARCIS (Netherlands)

    Ghezzi, L.; Balestrero, A.

    2010-01-01

    Modeling and Simulation of Low Voltage Arcs is an attempt to improve the physical understanding, mathematical modeling and numerical simulation of the electric arcs that are found during current interruptions in low voltage circuit breakers. An empirical description is gained by refined electrical

  17. [Development of residual voltage testing equipment].

    Science.gov (United States)

    Zeng, Xiaohui; Wu, Mingjun; Cao, Li; He, Jinyi; Deng, Zhensheng

    2014-07-01

    For the existing measurement methods of residual voltage which can't turn the power off at peak voltage exactly and simultaneously display waveforms, a new residual voltage detection method is put forward in this paper. First, the zero point of the power supply is detected with zero cross detection circuit and is inputted to a single-chip microcomputer in the form of pulse signal. Secend, when the zero point delays to the peak voltage, the single-chip microcomputer sends control signal to power off the relay. At last, the waveform of the residual voltage is displayed on a principal computer or oscilloscope. The experimental results show that the device designed in this paper can turn the power off at peak voltage and is able to accurately display the voltage waveform immediately after power off and the standard deviation of the residual voltage is less than 0.2 V at exactly one second and later.

  18. Triple voltage dc-to-dc converter and method

    Science.gov (United States)

    Su, Gui-Jia

    2008-08-05

    A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

  19. Variational integrators for electric circuits

    International Nuclear Information System (INIS)

    Ober-Blöbaum, Sina; Tao, Molei; Cheng, Mulin; Owhadi, Houman; Marsden, Jerrold E.

    2013-01-01

    In this contribution, we develop a variational integrator for the simulation of (stochastic and multiscale) electric circuits. When considering the dynamics of an electric circuit, one is faced with three special situations: 1. The system involves external (control) forcing through external (controlled) voltage sources and resistors. 2. The system is constrained via the Kirchhoff current (KCL) and voltage laws (KVL). 3. The Lagrangian is degenerate. Based on a geometric setting, an appropriate variational formulation is presented to model the circuit from which the equations of motion are derived. A time-discrete variational formulation provides an iteration scheme for the simulation of the electric circuit. Dependent on the discretization, the intrinsic degeneracy of the system can be canceled for the discrete variational scheme. In this way, a variational integrator is constructed that gains several advantages compared to standard integration tools for circuits; in particular, a comparison to BDF methods (which are usually the method of choice for the simulation of electric circuits) shows that even for simple LCR circuits, a better energy behavior and frequency spectrum preservation can be observed using the developed variational integrator

  20. Light-voltage conversion apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Fujioka, Yoshiki

    1987-09-19

    In a light-voltage conversion unit, when input signal is applied, the output signal to the control circuit has quick rise-up time and slow breaking time. In order to improve this, a short-circuit transistor is placed at the diode, and this transistor is forced ON, when an output signal to the control circuit is lowered down to a constant voltage, to short-circuit between the output terminals. This, however, has a demerit of high power consumption by a transistor. In this invention, by connecting a light-emitting element which gets ON at the first transition and a light-emitting element which gets ON at the last transition, placing a light receiving element in front of each light-emitting element, when an input signal is applied; thus a load is driven only with ON signal of each light-emitting element, eliminating the delay in the last transition. All of these give a quick responsive light-voltage conversion without unnecessary power consumption. (5 figs)

  1. Calorimeter Preamplifier Hybrid Circuit Test Jig

    International Nuclear Information System (INIS)

    Abraham, B.M.

    1999-01-01

    There are two ways in which the testing may be initiated, remotely or locally. If the remote operation is desired, an external TTL level signal must be provided to the test jig with the remotellocal switch on the side of the test jig switched to remote. A logic high will initiate the test. A logic low will terminate the test. In the event that an external signal is connected to the test jig while local operation occurs, the local control takes precedence over remote control. Once a DVT has been locked in the ZIF socket and the DIP switches are selected, the Push-to-Test button may be depressed. Momentarily depressing the button will initiate a test with a minimum 400 ms duration. At the same time a PBCLOCK and PBLATCH pulses will be initiated and the power rails +12V, +8V, and -6V will be ramped to full voltage. The time at which the power rails reach the full voltage is about 13 ms and it is synchronized with bypass capacitors placed on COMP input of U20 and U22 and on the output of U23 voltage regulators. The voltage rails are supplied to a ±10% window comparator. A red LED indicates the rail is below or above 10% of the design value. A green LED indicates the rail is within acceptable limits. For DDT with a 5 pF and 10 pF feed back capacitor, the +12V and +8V rails are current-regulated to 19rnA and 22 rnA respectively and the -6V rail is short-circuit protected within the regulator. For DUT with a 22 pF feed back capacitor the current regulation is the same as above except that the +8V rail is current regulated to 43 rnA. The power rails are supplied to the DUT via a 10 (Omega) resistor. The voltage drop across this resistor is sensed by a differential amplifier AD620 and amplified by a gain of 10. An external BNC connection is provided from this point to allow for current measurements by the vendor. The current value for each rail is calculated by measuring the voltage value at this point and divided by (10*10(Omega)). The next stage inverts and amplifies the

  2. Calorimeter Preamplifier Hybrid Circuit Test Jig

    Energy Technology Data Exchange (ETDEWEB)

    Abraham, B.M.; /Fermilab

    1999-04-19

    There are two ways in which the testing may be initiated, remotely or locally. If the remote operation is desired, an external TTL level signal must be provided to the test jig with the remotellocal switch on the side of the test jig switched to remote. A logic high will initiate the test. A logic low will terminate the test. In the event that an external signal is connected to the test jig while local operation occurs, the local control takes precedence over remote control. Once a DVT has been locked in the ZIF socket and the DIP switches are selected, the Push-to-Test button may be depressed. Momentarily depressing the button will initiate a test with a minimum 400 ms duration. At the same time a PBCLOCK and PBLATCH pulses will be initiated and the power rails +12V, +8V, and -6V will be ramped to full voltage. The time at which the power rails reach the full voltage is about 13 ms and it is synchronized with bypass capacitors placed on COMP input of U20 and U22 and on the output of U23 voltage regulators. The voltage rails are supplied to a {+-}10% window comparator. A red LED indicates the rail is below or above 10% of the design value. A green LED indicates the rail is within acceptable limits. For DDT with a 5 pF and 10 pF feed back capacitor, the +12V and +8V rails are current-regulated to 19rnA and 22 rnA respectively and the -6V rail is short-circuit protected within the regulator. For DUT with a 22 pF feed back capacitor the current regulation is the same as above except that the +8V rail is current regulated to 43 rnA. The power rails are supplied to the DUT via a 10 {Omega} resistor. The voltage drop across this resistor is sensed by a differential amplifier AD620 and amplified by a gain of 10. An external BNC connection is provided from this point to allow for current measurements by the vendor. The current value for each rail is calculated by measuring the voltage value at this point and divided by (10*10{Omega}). The next stage inverts and amplifies

  3. CMOS circuit design, layout and simulation

    CERN Document Server

    Baker, R Jacob

    2010-01-01

    The Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and much more. Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.

  4. Resonance circuits for adiabatic circuits

    Directory of Open Access Journals (Sweden)

    C. Schlachta

    2003-01-01

    Full Text Available One of the possible techniques to reduces the power consumption in digital CMOS circuits is to slow down the charge transport. This slowdown can be achieved by introducing an inductor in the charging path. Additionally, the inductor can act as an energy storage element, conserving the energy that is normally dissipated during discharging. Together with the parasitic capacitances from the circuit a LCresonant circuit is formed.

  5. The testing of generator circuit-breakers

    NARCIS (Netherlands)

    Smeets, R.P.P.; Linden, van der W.A.

    1998-01-01

    Generator circuit-breakers face much higher current and voltage stress than distribution switchgear. This has led to a special standard (ANSI C37.013). Strictly in accordance with this standard's requirements, test circuits and parameters for a 100 kA and 120 kA (25.3 kV) SF6 generator

  6. RF Circuit Design in Nanometer CMOS

    NARCIS (Netherlands)

    Nauta, Bram

    2007-01-01

    With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern

  7. Textbook Error: Short Circuiting on Electrochemical Cell

    Science.gov (United States)

    Bonicamp, Judith M.; Clark, Roy W.

    2007-01-01

    Short circuiting an electrochemical cell is an unreported but persistent error in the electrochemistry textbooks. It is suggested that diagrams depicting a cell delivering usable current to a load be postponed, the theory of open-circuit galvanic cells is explained, the voltages from the tables of standard reduction potentials is calculated and…

  8. Line-to-Line Fault Analysis and Location in a VSC-Based Low-Voltage DC Distribution Network

    Directory of Open Access Journals (Sweden)

    Shi-Min Xue

    2018-03-01

    Full Text Available A DC cable short-circuit fault is the most severe fault type that occurs in DC distribution networks, having a negative impact on transmission equipment and the stability of system operation. When a short-circuit fault occurs in a DC distribution network based on a voltage source converter (VSC, an in-depth analysis and characterization of the fault is of great significance to establish relay protection, devise fault current limiters and realize fault location. However, research on short-circuit faults in VSC-based low-voltage DC (LVDC systems, which are greatly different from high-voltage DC (HVDC systems, is currently stagnant. The existing research in this area is not conclusive, with further study required to explain findings in HVDC systems that do not fit with simulated results or lack thorough theoretical analyses. In this paper, faults are divided into transient- and steady-state faults, and detailed formulas are provided. A more thorough and practical theoretical analysis with fewer errors can be used to develop protection schemes and short-circuit fault locations based on transient- and steady-state analytic formulas. Compared to the classical methods, the fault analyses in this paper provide more accurate computed results of fault current. Thus, the fault location method can rapidly evaluate the distance between the fault and converter. The analyses of error increase and an improved handshaking method coordinating with the proposed location method are presented.

  9. Driver Circuit For High-Power MOSFET's

    Science.gov (United States)

    Letzer, Kevin A.

    1991-01-01

    Driver circuit generates rapid-voltage-transition pulses needed to switch high-power metal oxide/semiconductor field-effect transistor (MOSFET) modules rapidly between full "on" and full "off". Rapid switching reduces time of overlap between appreciable current through and appreciable voltage across such modules, thereby increasing power efficiency.

  10. An Unsolved Electric Circuit: A Common Misconception

    Science.gov (United States)

    Harsha, N. R. Sree; Sreedevi, A.; Prakash, Anupama

    2015-01-01

    Despite a number of theories in circuit analysis, little is known about the behaviour of ideal equal voltage sources in parallel, connected across a resistive load. We neither have any theory that can predict the voltage source that provides the load current, nor is there any method to test it experimentally. In a series of experiments performed…

  11. Capturing power at higher voltages from arrays of microbial fuel cells without voltage reversal

    KAUST Repository

    Kim, Younggy; Hatzell, Marta C.; Hutchinson, Adam J.; Logan, Bruce E.

    2011-01-01

    to the circuit load (resistor). The parallel charging of the capacitors avoided voltage reversal, while discharging the capacitors in series produced up to 2.5 V with four capacitors. There were negligible energy losses in the circuit compared to 20-40% losses

  12. Electronic circuit encyclopedia 2

    International Nuclear Information System (INIS)

    Park, Sun Ho

    1992-10-01

    This book is composed of 15 chapters, which are amplification of weak signal and measurement circuit audio control and power amplification circuit, data transmission and wireless system, forwarding and isolation, signal converting circuit, counter and comparator, discriminator circuit, oscillation circuit and synthesizer, digital and circuit on computer image processing circuit, sensor drive circuit temperature sensor circuit, magnetic control and application circuit, motor driver circuit, measuring instrument and check tool and power control and stability circuit.

  13. Electronic circuit encyclopedia 2

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sun Ho

    1992-10-15

    This book is composed of 15 chapters, which are amplification of weak signal and measurement circuit audio control and power amplification circuit, data transmission and wireless system, forwarding and isolation, signal converting circuit, counter and comparator, discriminator circuit, oscillation circuit and synthesizer, digital and circuit on computer image processing circuit, sensor drive circuit temperature sensor circuit, magnetic control and application circuit, motor driver circuit, measuring instrument and check tool and power control and stability circuit.

  14. The high voltage homopolar generator

    Science.gov (United States)

    Price, J. H.; Gully, J. H.; Driga, M. D.

    1986-11-01

    System and component design features of proposed high voltage homopolar generator (HVHPG) are described. The system is to have an open circuit voltage of 500 V, a peak output current of 500 kA, 3.25 MJ of stored inertial energy and possess an average magnetic-flux density of 5 T. Stator assembly components are discussed, including the stator, mount structure, hydrostatic bearings, main and motoring brushgears and rotor. Planned operational procedures such as monitoring the rotor to full speed and operation with a superconducting field coil are delineated.

  15. Manufacturing technology for practical Josephson voltage normals; Fertigungstechnologie fuer praxistaugliche Josephson-Spannungsnormale

    Energy Technology Data Exchange (ETDEWEB)

    Kohlmann, Johannes; Kieler, Oliver [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany). Arbeitsgruppe 2.43 ' ' Josephson-Schaltungen' '

    2016-09-15

    In this contribution we present the manufacturing technology for the fabrication of integrated superconducting Josephson serial circuits for voltage normals. First we summarize some foundations for Josephson voltage normals and sketch the concept and the setup of the circuits, before we describe the manufacturing technology form modern practical Josephson voltage normals.

  16. Gentilly 2 divider plate replacement

    International Nuclear Information System (INIS)

    Forest, J.; Klisel, E.; McClellan, G.; Schnelder, W.

    1995-01-01

    The steam generators at the Gentilly 2 Nuclear Plant in operation since 1983 were built with primary divider plates of a bolted panel configuration. During a routine outage inspection, it was noted that two bolts had dislodged from the divider and were located lying in the primary head. Subsequent inspections revealed erosion damage to a substantial number of divider plate bolts and to a lesser extent, to the divider plate itself. After further inspection and repair the units were returned to operation, however, it was determined that a permanent replacement of the primary divider plates was going to be necessary. After evaluation of various options, it was decided that the panel type dividers would be replaced with a single piece floating design. The divider itself was to be of a one piece all-welded arrangement to be constructed from individual panels to be brought in through the manways. In view of the strength limitations of the bolted attachment of the upper seat bar to the tubesheet, a new welded seat bar was provided. To counteract erosion concerns, the new divider is fitted with erosion resistant inserts or weld buildup and with improved sealing features in order to minimize leakage and erosion. At an advanced stage in the design and manufacture of the components, the issue of divider strength during LOCA conditions came into focus. Analysis was performed to determine the strength and/or failure characteristics of the divider to a variety of small and large LOCA conditions. The paper describes the diagnosis of the original divider plates and the design, manufacture, field mobilization, installation and subsequent operation of the replacement divider plates. (author)

  17. The digital divide: philosophical reflection

    Directory of Open Access Journals (Sweden)

    Dedyulina Marina Anatolevna

    2017-07-01

    Full Text Available The problem of digital divide itself is interesting for philosophical reflection as it lies at the crossroads of interests of social and political philosophy, philosophy of technology and epistemology, and these are just some of them. Due to the constant development of information technologies and the introduction of new technologies the digital divide is a dynamic problem. The main aim of this work is to analyse the conceptual and descriptive aspects of the problem of the digital divide, to get a more complete picture of the phenomenon. The digital divide is a complex problem that has social, political, cultural and ethical aspects.

  18. The Design of Phase-Locked-Loop Circuit for Precision Capacitance Micrometer

    Directory of Open Access Journals (Sweden)

    Li Shujie

    2016-01-01

    Full Text Available High precision non-contact micrometer is normally divided into three categories: inductance micrometer, capacitance micrometer and optical interferometer micrometer. The capacitance micrometer is widely used because it has high performance to price ratio. With the improvement of automation level, precision of capacitance micrometer is required higher and higher. Generally, capacitance micrometer consists of the capacitance sensor, capacitance/voltage conversion circuit, and modulation and demodulation circuits. However, due to the existing of resistors, capacitors and other components in the circuit, the phase shift of the carrier signal and the modulated signal might occur. In this case, the specific value of phase shift cannot be determined. Therefore, error caused by the phase shift cannot be eliminated. This will reduce the accuracy of micrometer. In this design, in order to eliminate the impact of the phase shift, the phase-locked-loop (PLL circuit is employed. Through the experiment, the function of tracking the input signal phase and frequency is achieved by the phase-locked-loop circuit. This signal processing method can also be applied to tuber electrical resistance tomography system and other precision measurement circuit.

  19. Essays on the Digital Divide

    Science.gov (United States)

    Abdelfattah, Belal M. T.

    2013-01-01

    The digital divide is a phenomenon that is globally persistent, despite rapidly decreasing costs in technology. While much of the variance in the adoption and use of information communication technology (ICT) that defines the digital divide can be explained by socioeconomic and demographic variables, there is still significant unaccounted variance…

  20. Overvoltage in low voltage systems due to mean voltage manoeuvres; Sobretensoes em sistemas de BT devidas a manobras na media tensao

    Energy Technology Data Exchange (ETDEWEB)

    Pazos, Francisco Jose; Amantegui, Javier; Ferrandis, Francisco; Barona, Amaya [Iberdrola, Madrid (Spain)

    2008-04-15

    The voltage interruption due to mean voltage maneuverers normal operation produces a transient type which is converted in a overvoltage on the low voltage circuit. Nevertheless to be considered a normal phenomena those over voltages have been pointed out as cause for damage in electric home appliances. What are the reasons? Inadequate protection or lack of immunity of the equipment?.

  1. Power conditioning using dynamic voltage restorers under different voltage sag types.

    Science.gov (United States)

    Saeed, Ahmed M; Abdel Aleem, Shady H E; Ibrahim, Ahmed M; Balci, Murat E; El-Zahab, Essam E A

    2016-01-01

    Voltage sags can be symmetrical or unsymmetrical depending on the causes of the sag. At the present time, one of the most common procedures for mitigating voltage sags is by the use of dynamic voltage restorers (DVRs). By definition, a DVR is a controlled voltage source inserted between the network and a sensitive load through a booster transformer injecting voltage into the network in order to correct any disturbance affecting a sensitive load voltage. In this paper, modelling of DVR for voltage correction using MatLab software is presented. The performance of the device under different voltage sag types is described, where the voltage sag types are introduced using the different types of short-circuit faults included in the environment of the MatLab/Simulink package. The robustness of the proposed device is evaluated using the common voltage sag indices, while taking into account voltage and current unbalance percentages, where maintaining the total harmonic distortion percentage of the load voltage within a specified range is desired. Finally, several simulation results are shown in order to highlight that the DVR is capable of effective correction of the voltage sag while minimizing the grid voltage unbalance and distortion, regardless of the fault type.

  2. Discharge quenching circuit for counters

    International Nuclear Information System (INIS)

    Karasik, A.S.

    1982-01-01

    A circuit for quenching discharges in gas-discharge detectors with working voltage of 3-5 kV based on transistors operating in the avalanche mode is described. The quenching circuit consists of a coordinating emitter follower, amplifier-shaper for avalanche key cascade control which changes potential on the counter electrodes and a shaper of discharge quenching duration. The emitter follower is assembled according to a widely used flowsheet with two transistors. The circuit permits to obtain a rectangular quenching pulse with front of 100 ns and an amplitude of up to 3.2 kV at duration of 500 μm-8 ms. Application of the quenching circuit described permits to obtain countering characteristics with the slope less than or equal to 0.02%/V and plateau extent greater than or equal to 300 V [ru

  3. First unitary, then divided: the temporal dynamics of dividing attention.

    Science.gov (United States)

    Jefferies, Lisa N; Witt, Joseph B

    2018-04-24

    Whether focused visual attention can be divided has been the topic of much investigation, and there is a compelling body of evidence showing that, at least under certain conditions, attention can be divided and deployed as two independent foci. Three experiments were conducted to examine whether attention can be deployed in divided form from the outset, or whether it is first deployed as a unitary focus before being divided. To test this, we adapted the methodology of Jefferies, Enns, and Di Lollo (Journal of Experimental Psychology: Human Perception and Performance 40: 465, 2014), who used a dual-stream Attentional Blink paradigm and two letter-pair targets. One aspect of the AB, Lag-1 sparing, has been shown to occur only if the second target pair appears within the focus of attention. By presenting the second target pair at various spatial locations and assessing the magnitude of Lag-1 sparing, we probed the spatial distribution of attention. By systematically manipulating the stimulus-onset-asynchrony between the targets, we also tracked changes to the spatial distribution of attention over time. The results showed that even under conditions which encourage the division of attention, the attentional focus is first deployed in unitary form before being divided. It is then maintained in divided form only briefly before settling on a single location.

  4. Complete low power controller for high voltage power systems

    International Nuclear Information System (INIS)

    Sumner, R.; Blanar, G.

    1997-01-01

    The MHV100 is a custom CMOS integrated circuit, developed for the AMS experiment. It provides complete control for a single channel high voltage (HV) generator and integrates all the required digital communications, D to A and A to D converters, the analog feedback loop and output drivers. This chip has been designed for use in both distributed high voltage systems or for low cost single channel high voltage systems. The output voltage and current range is determined by the external components

  5. 30 CFR 75.800-2 - Approved circuit schemes.

    Science.gov (United States)

    2010-07-01

    ... undervoltage protection if the relay coils are designed to trip the circuit breaker when line voltage decreases to 40 percent to 60 percent of the nominal line voltage; (b) Ground trip relays on resistance... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution...

  6. Physically based arc-circuit interaction

    International Nuclear Information System (INIS)

    Zhong-Lie, L.

    1984-01-01

    An integral arc model is extended to study the interaction of the gas blast arc with the test circuit in this paper. The deformation in the waveshapes of arc current and voltage around the current zero has been formulated to first approximation by using a simple model of arc voltage based on the arc core energy conservation. By supplementing with the time scale for the radiation, the time rates of arc processes were amended. Both the contributions of various arc processes and the influence of circuit parameters to the arc-circuit interaction have been estimated by this theory. Analysis generated a new method of calculating test circuit parameters which improves the accurate simulation of arc-circuit interaction. The new method agrees with the published experimental results

  7. Testing of 800 and 1200 kV class circuit breakers

    NARCIS (Netherlands)

    Smeets, R.P.P.; Kuivenhoven, S.; Hofstee, A.B.

    2011-01-01

    The most critical transient a circuit breaker has to endure during its operation is the transient recovery voltage (TRV), initiated by the electric power system as a natural reaction on current interruption. For circuit breakers intended to operate in ultra-high voltage systems (with rated voltage

  8. CMOS voltage references an analytical and practical perspective

    CERN Document Server

    Kok, Chi-Wah

    2013-01-01

    A practical overview of CMOS circuit design, this book covers the technology, analysis, and design techniques of voltage reference circuits.  The design requirements covered follow modern CMOS processes, with an emphasis on low power, low voltage, and low temperature coefficient voltage reference design. Dedicating a chapter to each stage of the design process, the authors have organized the content to give readers the tools they need to implement the technologies themselves. Readers will gain an understanding of device characteristics, the practical considerations behind circuit topology,

  9. Theoretical analysis of magnetic sensor output voltage

    International Nuclear Information System (INIS)

    Liu Haishun; Dun Chaochao; Dou Linming; Yang Weiming

    2011-01-01

    The output voltage is an important parameter to determine the stress state in magnetic stress measurement, the relationship between the output voltage and the difference in the principal stresses was investigated by a comprehensive application of magnetic circuit theory, magnetization theory, stress analysis as well as the law of electromagnetic induction, and a corresponding quantitative equation was derived. It is drawn that the output voltage is proportional to the difference in the principal stresses, and related to the angle between the principal stress and the direction of the sensor. This investigation provides a theoretical basis for the principle stresses measurement by output voltage. - Research highlights: → A comprehensive investigation of magnetic stress signal. → Derived a quantitative equation about output voltage and the principal stresses. → The output voltage is proportional to the difference of the principal stresses. → Provide a theoretical basis for the principle stresses measurement.

  10. Inexpensive system protects megawatt resistance-heating furnace against high-voltage surges

    Science.gov (United States)

    Stearns, E. J.

    1971-01-01

    Coolant gas extinguishes arcing across the break in a heater element. Air-gap shunt which bypasses high voltage impressed across the circuit prevents damage if the resistance elements break and open the inductive circuit.

  11. 10-bit rapid single flux quantum digital-to-analog converter for ac voltage standard

    International Nuclear Information System (INIS)

    Maezawa, M; Hirayama, F

    2008-01-01

    Digital-to-analog (D/A) converters based on rapid single flux quantum (RSFQ) technology are under development for ac voltage standard applications. We present design and test results on a prototype 10-bit version integrated on a single chip. The 10-bit chip includes over 6000 Josephson junctions and consumes a bias current exceeding 1 A. To reduce the effects of the high bias current on circuit operation, a custom design method was employed in part and large circuit blocks were divided into smaller ones. The 10-bit chips were fabricated and tested at low speed. The test results suggested that our design approach could manage large bias currents on the order of 1 A per chip

  12. Electronic circuits for communications systems: A compilation

    Science.gov (United States)

    1972-01-01

    The compilation of electronic circuits for communications systems is divided into thirteen basic categories, each representing an area of circuit design and application. The compilation items are moderately complex and, as such, would appeal to the applications engineer. However, the rationale for the selection criteria was tailored so that the circuits would reflect fundamental design principles and applications, with an additional requirement for simplicity whenever possible.

  13. Fast switching wideband rectifying circuit for future RF energy harvesting

    Science.gov (United States)

    Asmeida, Akrem; Mustam, Saizalmursidi Md; Abidin, Z. Z.; Ashyap, A. Y. I.

    2017-09-01

    This paper presents the design and simulation of fast switching microwave rectifying circuit for ultra wideband patch antenna over a dual-frequency band (1.8 GHz for GSM and 2.4 GHz for ISM band). This band was chosen due to its high signal availability in the surrounding environment. New rectifying circuit topology with pair-matching trunks is designed using Advanced Design System (ADS) software. These trunks are interfaced with power divider to achieve good bandwidth, fast switching and high efficiency. The power divider acts as a good isolator between the trunks and its straightforward design structure makes it a good choice for a single feed UWB antenna. The simulated results demonstrate that the maximum output voltage is 2.13 V with an input power of -5 dBm. Moreover, the rectifier offers maximum efficiency of 86% for the input power of -5 dBm at given band, which could easily power up wireless sensor networks (WSN) and other small devices sufficiently.

  14. Four-terminal circuit element with photonic core

    Science.gov (United States)

    Sampayan, Stephen

    2017-08-29

    A four-terminal circuit element is described that includes a photonic core inside of the circuit element that uses a wide bandgap semiconductor material that exhibits photoconductivity and allows current flow through the material in response to the light that is incident on the wide bandgap material. The four-terminal circuit element can be configured based on various hardware structures using a single piece or multiple pieces or layers of a wide bandgap semiconductor material to achieve various designed electrical properties such as high switching voltages by using the photoconductive feature beyond the breakdown voltages of semiconductor devices or circuits operated based on electrical bias or control designs. The photonic core aspect of the four-terminal circuit element provides unique features that enable versatile circuit applications to either replace the semiconductor transistor-based circuit elements or semiconductor diode-based circuit elements.

  15. Control circuits in power electronics practical issues in design and implementation

    CERN Document Server

    Castilla, Miguel

    2016-01-01

    Control circuits are a key element in the operation and performance of power electronics converters. This book describes practical issues related to the design and implementation of these control circuits, and is divided into three parts - analogue control circuits, digital control circuits, and new trends in control circuits.

  16. 30 CFR 75.705-2 - Repairs to energized surface high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repairs to energized surface high-voltage lines... Repairs to energized surface high-voltage lines. An energized high-voltage surface line may be repaired... on power circuits with a phase-to-phase nominal voltage no greater than 15,000 volts; (3) Such...

  17. Experimental observations of EMI effects in autonomous Chua's chaotic circuit

    International Nuclear Information System (INIS)

    Kilic, Recai; Saracoglu, O. Galip; Yildirim, Fatma

    2007-01-01

    This paper deals with the experimentally investigation of EMI effects in autonomous Chua's chaotic circuit. We realized this experimental investigation by constructing an experimental setup subject to a Chua's circuit and applying a 5-30 MHz/100-200 mV EMI signal to the input pins of voltage Op-Amps used for realizing nonlinear resistor in Chua's circuit. In addition, we also experimentally investigated whether EMI signals affect the chaos synchronization between two Chua's chaotic circuits or not

  18. Newnes circuit calculations pocket book with computer programs

    CERN Document Server

    Davies, Thomas J

    2013-01-01

    Newnes Circuit Calculations Pocket Book: With Computer Programs presents equations, examples, and problems in circuit calculations. The text includes 300 computer programs that help solve the problems presented. The book is comprised of 20 chapters that tackle different aspects of circuit calculation. The coverage of the text includes dc voltage, dc circuits, and network theorems. The book also covers oscillators, phasors, and transformers. The text will be useful to electrical engineers and other professionals whose work involves electronic circuitry.

  19. Controllable circuit

    DEFF Research Database (Denmark)

    2010-01-01

    A switch-mode power circuit comprises a controllable element and a control unit. The controllable element is configured to control a current in response to a control signal supplied to the controllable element. The control unit is connected to the controllable element and provides the control...

  20. Circuit Training.

    Science.gov (United States)

    Nelson, Jane B.

    1998-01-01

    Describes a research-based activity for high school physics students in which they build an LC circuit and find its resonant frequency of oscillation using an oscilloscope. Includes a diagram of the apparatus and an explanation of the procedures. (DDR)

  1. Development of voltage sensitive preamplifier using pulse ionization chamber emanometer

    International Nuclear Information System (INIS)

    Huang He; Peng Xincun; Fu Zhijian; Zhu Zhifu; Zhang Xiongjie

    2011-01-01

    The voltage preamplifier for the instrument that detecting the Rn and its radon daughter elements is designed. The related circuit are designed and tested. It shows that this preamplifier satisfies the requirement of nuclear measurement system. (authors)

  2. FPGA Based Compensation Method for Correcting Distortion in Voltage Inverters

    National Research Council Canada - National Science Library

    Williamson, Kenya D

    2007-01-01

    ...) voltage source inverters. Blanking time distortion is caused by the delay inserted to prevent the short circuit that would occur if the two transistors in the same inverter leg are both on at the same time...

  3. Getting Past the "Digital Divide"

    Science.gov (United States)

    McCollum, Sean

    2011-01-01

    In the last decade, "digital divide" has become a catchphrase for the stubborn disparity in IT resources between communities, especially in regard to education. Low-income, rural and minority populations have received special scrutiny as the technological "have-nots." This article presents success stories of educators who can work around obstacles…

  4. Dividing Attention Increases Operational Momentum

    Directory of Open Access Journals (Sweden)

    Koleen McCrink

    2017-12-01

    Full Text Available When adding or subtracting two quantities, adults often compute an estimated outcome that is larger or smaller, respectively, than the actual outcome, a bias referred to as “operational momentum”. The effects of attention on operational momentum were investigated. Participants viewed a display in which two arrays of objects were added, or one array was subtracted from another array, and judged whether a subsequent outcome (probe array contained the correct or incorrect number of objects. In a baseline condition, only the arrays to be added or subtracted were viewed. In divided attention conditions, participants simultaneously viewed a sequence of colors or shapes, and judged which color (a non-spatial judgment or shape (a spatial judgment was repeated. Operational momentum occurred in all conditions, but was higher in divided attention conditions than in the baseline condition, primarily for addition problems. This pattern suggests that dividing attention, rather than decreasing operational momentum by decreasing attentional shifts, actually increased operational momentum. These results are consistent with a heightened use of arithmetic heuristics under conditions of divided attention.

  5. Dividing Fractions: A Pedagogical Technique

    Science.gov (United States)

    Lewis, Robert

    2016-01-01

    When dividing one fraction by a second fraction, invert, that is, flip the second fraction, then multiply it by the first fraction. To multiply fractions, simply multiply across the denominators, and multiply across the numerators to get the resultant fraction. So by inverting the division of fractions it is turned into an easy multiplication of…

  6. Capturing power at higher voltages from arrays of microbial fuel cells without voltage reversal

    KAUST Repository

    Kim, Younggy

    2011-01-01

    Voltages produced by microbial fuel cells (MFCs) cannot be sustainably increased by linking them in series due to voltage reversal, which substantially reduces stack voltages. It was shown here that MFC voltages can be increased with continuous power production using an electronic circuit containing two sets of multiple capacitors that were alternately charged and discharged (every one second). Capacitors were charged in parallel by the MFCs, but linked in series while discharging to the circuit load (resistor). The parallel charging of the capacitors avoided voltage reversal, while discharging the capacitors in series produced up to 2.5 V with four capacitors. There were negligible energy losses in the circuit compared to 20-40% losses typically obtained with MFCs using DC-DC converters to increase voltage. Coulombic efficiencies were 67% when power was generated via four capacitors, compared to only 38% when individual MFCs were operated with a fixed resistance of 250 Ω. The maximum power produced using the capacitors was not adversely affected by variable performance of the MFCs, showing that power generation can be maintained even if individual MFCs perform differently. Longer capacitor charging and discharging cycles of up to 4 min maintained the average power but increased peak power by up to 2.6 times. These results show that capacitors can be used to easily obtain higher voltages from MFCs, allowing for more useful capture of energy from arrays of MFCs. © 2011 The Royal Society of Chemistry.

  7. Study and achievement of a digital-analog-divider; Etude et realisation d'un diviseur-analogique-numerique

    Energy Technology Data Exchange (ETDEWEB)

    Petin, A [Commissariat a l' Energie Atomique, Cadarache (France). Centre d' Etudes Nucleaires

    1969-04-01

    This apparatus is designed to give directly, in digital form, the value of the ratio Vt1/V2 two analog voltages. It consists essentially of an analog-digital coder operating by successive weighing; the comparison voltage is made proportional to the divider V2 in the coder. The input dynamics are such that the voltages Vi and V2 are all in the range -50 mV to -5 V. Each of the circuits has an input impedance of about 10 K{omega}. As for the quotient, it is a binary number given in series and parallel form; it is made up of 8 bits, this giving a change of 1/16 to 16 per jump of 1/16 in the zone where the accuracy is highest (V2 {>=} 800 mV). The time required for a division is, at best, 15 {mu}sec. During the time of calculation, the voltages V{sub 1} and V{sub 2} should not vary by more than 1 per cent and 0.5 per cent respectively. The theory of the system and the investigation of a synoptic diagram, the study of the circuits and the actual construction are presented. (author) [French] Cet appareil est destine a fournir directement sous forme numerique la valeur du rapport V1/V2 de deux tensions analogiques. Il est constitue essentiellement d'un codeur analogique-numerique fonctionnant par pesees successives dans lequel la tension de reference est rendue proportionnelle au diviseur V2. La dynamique d'entree est telle que les tensions V1 et V2 peuvent etre comprises dans l'intervalle -50 mV a -5 V. Chacune des voies presente une impedance d'entree d'environ 10 K{omega}. En ce qui concerne le quotient, c'est un nombre binaire delivre sous les formes serie et parallele ; il est compose de 8 bits, ce qui donne une variation de 1/16 a 16 par bond de 1/16 dans la zone de meilleure precision (V2 {>=} 800 mV). Le temps necessaire pour effectuer la division est au mieux de 15 {mu}s. Durant le temps de calcul les tensions V{sub 1} et V{sub 2} ne doivent pas varier respectivement de plus de 1 pour cent et 0.5 pour cent. Apres avoir etabli la theorie du systeme, les

  8. Study and achievement of a digital-analog-divider; Etude et realisation d'un diviseur-analogique-numerique

    Energy Technology Data Exchange (ETDEWEB)

    Petin, A. [Commissariat a l' Energie Atomique, Cadarache (France). Centre d' Etudes Nucleaires

    1969-04-01

    This apparatus is designed to give directly, in digital form, the value of the ratio Vt1/V2 two analog voltages. It consists essentially of an analog-digital coder operating by successive weighing; the comparison voltage is made proportional to the divider V2 in the coder. The input dynamics are such that the voltages Vi and V2 are all in the range -50 mV to -5 V. Each of the circuits has an input impedance of about 10 K{omega}. As for the quotient, it is a binary number given in series and parallel form; it is made up of 8 bits, this giving a change of 1/16 to 16 per jump of 1/16 in the zone where the accuracy is highest (V2 {>=} 800 mV). The time required for a division is, at best, 15 {mu}sec. During the time of calculation, the voltages V{sub 1} and V{sub 2} should not vary by more than 1 per cent and 0.5 per cent respectively. The theory of the system and the investigation of a synoptic diagram, the study of the circuits and the actual construction are presented. (author) [French] Cet appareil est destine a fournir directement sous forme numerique la valeur du rapport V1/V2 de deux tensions analogiques. Il est constitue essentiellement d'un codeur analogique-numerique fonctionnant par pesees successives dans lequel la tension de reference est rendue proportionnelle au diviseur V2. La dynamique d'entree est telle que les tensions V1 et V2 peuvent etre comprises dans l'intervalle -50 mV a -5 V. Chacune des voies presente une impedance d'entree d'environ 10 K{omega}. En ce qui concerne le quotient, c'est un nombre binaire delivre sous les formes serie et parallele ; il est compose de 8 bits, ce qui donne une variation de 1/16 a 16 par bond de 1/16 dans la zone de meilleure precision (V2 {>=} 800 mV). Le temps necessaire pour effectuer la division est au mieux de 15 {mu}s. Durant le temps de calcul les tensions V{sub 1} et V{sub 2} ne doivent pas varier respectivement de plus de 1 pour cent et 0.5 pour cent. Apres avoir etabli la

  9. Non-contact current and voltage sensor

    Science.gov (United States)

    Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

    2014-03-25

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  10. Synchronization circuit for shaping picosecond accelerated-electron pulses

    International Nuclear Information System (INIS)

    Pavlov, Y.S.; Solov'ev, N.G.; Tomnikov, A.P.

    1986-01-01

    The authors discuss a high-speed circuit for synchronization of trigger pulses of the deflector modulator of an accelerator with a given phase of rf voltage of 200 MHz. The measured time instability between the output trigger pulses of the circuit and the input rf voltage is ≤ + or - 0.05 nsec. The circuit is implemented by ECL integrated circuits of series K100 and K500, and operates in both the pulse (pulse duration 3 μsec and repetition frequency 400 Hz) and continuous modes

  11. Multifunction Voltage-Mode Filter Using Single Voltage Differencing Differential Difference Amplifier

    Directory of Open Access Journals (Sweden)

    Chaichana Amornchai

    2017-01-01

    Full Text Available In this paper, a voltage mode multifunction filter based on single voltage differencing differential difference amplifier (VDDDA is presented. The proposed filter with three input voltages and single output voltage is constructed with single VDDDA, two capacitors and two resistors. Its quality factor can be adjusted without affecting natural frequency. Also, the natural frequency can be electronically tuned via adjusting of bias current. The filter can offer five output responses, high-pas (HP, band-pass (BP, band-reject (BR, low-pass (LP and all-ass (AP functions in the same circuit topology. The output response can be selected by choosing the suitable input voltage without the component matching condition and the requirement of additional double gain voltage amplifier. PSpice simulation results to confirm an operation of the proposed filter correspond to the theory.

  12. Interconnect rise time in superconducting integrating circuits

    International Nuclear Information System (INIS)

    Preis, D.; Shlager, K.

    1988-01-01

    The influence of resistive losses on the voltage rise time of an integrated-circuit interconnection is reported. A distribution-circuit model is used to present the interconnect. Numerous parametric curves are presented based on numerical evaluation of the exact analytical expression for the model's transient response. For the superconducting case in which the series resistance of the interconnect approaches zero, the step-response rise time is longer but signal strength increases significantly

  13. Maximum permissible voltage of YBCO coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Wen, J.; Lin, B.; Sheng, J.; Xu, J.; Jin, Z. [Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai (China); Hong, Z., E-mail: zhiyong.hong@sjtu.edu.cn [Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai (China); Wang, D.; Zhou, H.; Shen, X.; Shen, C. [Qingpu Power Supply Company, State Grid Shanghai Municipal Electric Power Company, Shanghai (China)

    2014-06-15

    Highlights: • We examine three kinds of tapes’ maximum permissible voltage. • We examine the relationship between quenching duration and maximum permissible voltage. • Continuous I{sub c} degradations under repetitive quenching where tapes reaching maximum permissible voltage. • The relationship between maximum permissible voltage and resistance, temperature. - Abstract: Superconducting fault current limiter (SFCL) could reduce short circuit currents in electrical power system. One of the most important thing in developing SFCL is to find out the maximum permissible voltage of each limiting element. The maximum permissible voltage is defined as the maximum voltage per unit length at which the YBCO coated conductors (CC) do not suffer from critical current (I{sub c}) degradation or burnout. In this research, the time of quenching process is changed and voltage is raised until the I{sub c} degradation or burnout happens. YBCO coated conductors test in the experiment are from American superconductor (AMSC) and Shanghai Jiao Tong University (SJTU). Along with the quenching duration increasing, the maximum permissible voltage of CC decreases. When quenching duration is 100 ms, the maximum permissible of SJTU CC, 12 mm AMSC CC and 4 mm AMSC CC are 0.72 V/cm, 0.52 V/cm and 1.2 V/cm respectively. Based on the results of samples, the whole length of CCs used in the design of a SFCL can be determined.

  14. Divided by the Market, Divided by the State

    DEFF Research Database (Denmark)

    Wulfgramm, Melike; Starke, Peter

    2017-01-01

    of the individual differences, the analysis also shows, for the first time, that both high inequality and strongly redistributive policies divide public opinion along the lines of socioeconomic position. Put differently, while market inequality may be associated with less cohesive attitudes, a highly redistributive...... welfare state does not seem to foster agreement among the public, either. These findings have important policy implications for advanced welfare states, including a renewed emphasis on ‘predistribution’ (i.e., policies that influence the primary distribution of income) in order to avoid the scenario...

  15. Low-voltage CMOS operational amplifiers theory, design and implementation

    CERN Document Server

    Sakurai, Satoshi

    1995-01-01

    Low-Voltage CMOS Operational Amplifiers: Theory, Design and Implementation discusses both single and two-stage architectures. Opamps with constant-gm input stage are designed and their excellent performance over the rail-to-rail input common mode range is demonstrated. The first set of CMOS constant-gm input stages was introduced by a group from Technische Universiteit, Delft and Universiteit Twente, the Netherlands. These earlier versions of circuits are discussed, along with new circuits developed at the Ohio State University. The design, fabrication (MOSIS Tiny Chips), and characterization of the new circuits are now complete. Basic analog integrated circuit design concepts should be understood in order to fully appreciate the work presented. However, the topics are presented in a logical order and the circuits are explained in great detail, so that Low-Voltage CMOS Operational Amplifiers can be read and enjoyed by those without much experience in analog circuit design. It is an invaluable reference boo...

  16. MIMS circuit scrapbook V.I.

    CERN Document Server

    Mims, Forrest

    2000-01-01

    Here it is--a collection of Forrest Mims's classic work from the original Popular Electronics magazine! Using commonly available components and remarkable ingenuity, Forrest shows you how to build and experiment with circuits like these:analog computers color organs digital phase-locked loops frequency-to-voltage and voltage-to-frequency converters interval timers LED oscilloscopes light wave communicators magnetic field sensors optoelectronics pseudorandom number generators tone sequencers and much, much, more!

  17. Automatic location of short circuit faults

    Energy Technology Data Exchange (ETDEWEB)

    Lehtonen, M. [VTT Energy, Espoo (Finland); Hakola, T.; Antila, E. [ABB Power Oy, Helsinki (Finland); Seppaenen, M. [North-Carelian Power Company (Finland)

    1996-12-31

    In this presentation, the automatic location of short circuit faults on medium voltage distribution lines, based on the integration of computer systems of medium voltage distribution network automation is discussed. First the distribution data management systems and their interface with the substation telecontrol, or SCADA systems, is studied. Then the integration of substation telecontrol system and computerised relay protection is discussed. Finally, the implementation of the fault location system is presented and the practical experience with the system is discussed

  18. Automatic location of short circuit faults

    Energy Technology Data Exchange (ETDEWEB)

    Lehtonen, M [VTT Energy, Espoo (Finland); Hakola, T; Antila, E [ABB Power Oy (Finland); Seppaenen, M [North-Carelian Power Company (Finland)

    1998-08-01

    In this chapter, the automatic location of short circuit faults on medium voltage distribution lines, based on the integration of computer systems of medium voltage distribution network automation is discussed. First the distribution data management systems and their interface with the substation telecontrol, or SCADA systems, is studied. Then the integration of substation telecontrol system and computerized relay protection is discussed. Finally, the implementation of the fault location system is presented and the practical experience with the system is discussed

  19. Automatic location of short circuit faults

    Energy Technology Data Exchange (ETDEWEB)

    Lehtonen, M [VTT Energy, Espoo (Finland); Hakola, T; Antila, E [ABB Power Oy, Helsinki (Finland); Seppaenen, M [North-Carelian Power Company (Finland)

    1997-12-31

    In this presentation, the automatic location of short circuit faults on medium voltage distribution lines, based on the integration of computer systems of medium voltage distribution network automation is discussed. First the distribution data management systems and their interface with the substation telecontrol, or SCADA systems, is studied. Then the integration of substation telecontrol system and computerised relay protection is discussed. Finally, the implementation of the fault location system is presented and the practical experience with the system is discussed

  20. The pulse-driven AC Josephson voltage normal

    International Nuclear Information System (INIS)

    Kieler, Oliver

    2016-01-01

    In this contribution quantum precise alternating-voltage sources are presented, which make the generation of arbitrary wave forms with highest spectral purity with a high bandwidth from DC up to the MHz range possible. Heartpiece of these Josephson voltage normals is a serial circuit of many thousand Josephson contacts, which make by irradiation with high-frequency radiation (microwaves) the generation of highly precise voltage values possible. Thereby in the current-voltage characteristics stages of constant voltage, so called Shapiro stages, occur. Illustratively these stages can be described by the transfer of a certain number of flux quanta through the Josephson contacts.

  1. The influence of motor re-acceleration on voltage sags

    NARCIS (Netherlands)

    Bollen, M.H.J.

    1995-01-01

    The assumption that a voltage sag is rectangular is not correct in a power system with large induction motor loads. The motors decelerate during the short circuit. After fault-clearing, they will accelerate again, drawing a high reactive current from the supply, causing a prolonged postfault voltage

  2. A high-voltage pulse generator for corona plasma generation

    NARCIS (Netherlands)

    Yan, K.; Heesch, van E.J.M.; Pemen, A.J.M.; Huijbrechts, P.A.H.J.; Gompel, van F.M.; Leuken, van H.E.M.; Matyas, Z.

    2002-01-01

    This paper discusses a high-voltage pulse generator for producing corona plasma. The generator consists of three resonant charging circuits, a transmission line transformer, and a triggered spark-gap switch. Voltage pulses in the order of 30-100 kV with a rise time of 10-20 ns, a pulse duration of

  3. Linear variable voltage diode capacitor and adaptive matching networks

    NARCIS (Netherlands)

    Larson, L.E.; De Vreede, L.C.N.

    2006-01-01

    An integrated variable voltage diode capacitor topology applied to a circuit providing a variable voltage load for controlling variable capacitance. The topology includes a first pair of anti-series varactor diodes, wherein the diode power-law exponent n for the first pair of anti-series varactor

  4. Development of a terminal voltage stabilization system for the FOTIA ...

    Indian Academy of Sciences (India)

    Abstract. A terminal voltage stabilization system for the folded tandem ion accelerator (FOTIA) was developed and is in continuous use. The system achieves good voltage stabilization, eliminates ground loops and noise interference. It incorporates a correcting circuit for compensating the mains frequency variations in the ...

  5. Influence of X and gamma radiation and bias conditions on dropout voltage of voltage regulators serial transistors

    International Nuclear Information System (INIS)

    Vukic, V.; Osmokrovic, P.; Stankovic, S.; Kovacevic, M.

    2005-01-01

    Research topic presented in this paper is degradation of characteristics of low-dropout voltage regulator's serial transistor during exposure of device to the ionizing radiation. Voltage regulators were exposed to X and γ radiation in two modes: without bias conditions, and with bias conditions and load. Tested circuits are representatives of the first and the second generation of low-dropout voltage regulators, with lateral and vertical PNP serial transistor: LM2940 and L4940. Experimental results of output voltage and serial dropout voltage change in function of total ionizing dose, during the medium-dose-rate exposure, were presented. (author) [sr

  6. Novel Power Conditioning Circuits for Piezoelectric Micro Power Generators

    National Research Council Canada - National Science Library

    von Jouranne, Annette

    2003-01-01

    .... The objective of this research is to design a power conditioning circuit "PCC" for use in conjunction with low voltage microelectromechanical systems "MEMS"-based Palouse Piezoelectric Power "P3...

  7. A digital divider with extension bits for position-sensitive detectors

    International Nuclear Information System (INIS)

    Koike, Masaki; Hasegawa, Ken-ichi

    1988-01-01

    Digitizing errors produced in a digital divider for position-sensitive detectors have been reduced by adding extension bits to data bits. A relation between the extension bits and the data bits to obtain perfect position uniformity is also given. A digital divider employing 10 bit ADCs and 6 bit extension circuits has been constructed. (orig.)

  8. Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

    Science.gov (United States)

    Lin, Bor-Ren

    2018-04-01

    This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

  9. Quantum-Circuit Refrigerator

    Science.gov (United States)

    MöTtöNen, Mikko; Tan, Kuan Y.; Masuda, Shumpei; Partanen, Matti; Lake, Russell E.; Govenius, Joonas; Silveri, Matti; Grabert, Hermann

    Quantum technology holds great potential in providing revolutionizing practical applications. However, fast and precise cooling of the functional quantum degrees of freedom on demand remains a major challenge in many solid-state implementations, such as superconducting circuits. We demonstrate direct cooling of a superconducting resonator mode using voltage-controllable quantum tunneling of electrons in a nanoscale refrigerator. In our first experiments on this type of a quantum-circuit refrigerator, we measure the drop in the mode temperature by electron thermometry at a resistor which is coupled to the resonator mode through ohmic losses. To eliminate unwanted dissipation, we remove the probe resistor and directly observe the power spectrum of the resonator output in agreement with the so-called P(E) theory. We also demonstrate in microwave reflection experiments that the internal quality factor of the resonator can be tuned by orders of magnitude. In the future, our refrigerator can be integrated with different quantum electric devices, potentially enhancing their performance. For example, it may prove useful in the initialization of superconducting quantum bits and in dissipation-assisted quantum annealing. We acknowledge European Research Council Grant SINGLEOUT (278117) and QUESS (681311) for funding.

  10. LOGIC CIRCUIT

    Science.gov (United States)

    Strong, G.H.; Faught, M.L.

    1963-12-24

    A device for safety rod counting in a nuclear reactor is described. A Wheatstone bridge circuit is adapted to prevent de-energizing the hopper coils of a ball backup system if safety rods, sufficient in total control effect, properly enter the reactor core to effect shut down. A plurality of resistances form one arm of the bridge, each resistance being associated with a particular safety rod and weighted in value according to the control effect of the particular safety rod. Switching means are used to switch each of the resistances in and out of the bridge circuit responsive to the presence of a particular safety rod in its effective position in the reactor core and responsive to the attainment of a predetermined velocity by a particular safety rod enroute to its effective position. The bridge is unbalanced in one direction during normal reactor operation prior to the generation of a scram signal and the switching means and resistances are adapted to unbalance the bridge in the opposite direction if the safety rods produce a predetermined amount of control effect in response to the scram signal. The bridge unbalance reversal is then utilized to prevent the actuation of the ball backup system, or, conversely, a failure of the safety rods to produce the predetermined effect produces no unbalance reversal and the ball backup system is actuated. (AEC)

  11. Microelectronic circuit design for energy harvesting systems

    CERN Document Server

    Di Paolo Emilio, Maurizio

    2017-01-01

    This book describes the design of microelectronic circuits for energy harvesting, broadband energy conversion, new methods and technologies for energy conversion. The author also discusses the design of power management circuits and the implementation of voltage regulators. Coverage includes advanced methods in low and high power electronics, as well as principles of micro-scale design based on piezoelectric, electromagnetic and thermoelectric technologies with control and conditioning circuit design. Provides a single-source reference to energy harvesting and its applications; Serves as a practical guide to microelectronics design for energy harvesting, with application to mobile power supplies; Enables readers to develop energy harvesting systems for wearable/mobile electronics.

  12. Design of Compact Wilkinson Power Divider with Harmonic Suppression using T-Shaped Resonators

    Science.gov (United States)

    Siahkamari, Hesam; Yasoubi, Zahra; Jahanbakhshi, Maryam; Mousavi, Seyed Mohammad Hadi; Siahkamari, Payam; Nouri, Mohammad Ehsan; Azami, Sajad; Azadi, Rasoul

    2018-04-01

    A novel scheme of a shrunken Wilkinson power divider with harmonic suppression, using two identical resonators in the conventional Wilkinson power divider is designed. Moreover, the LC equivalent circuit and its relevant formulas are provided. To substantiate the functionality and soundness of design, a microstrip implementation of this design operating at 1 GHz with the second to eighth harmonic suppression, is developed. The proposed circuit is relatively smaller than the conventional circuit, (roughly 55% of the conventional circuit). Simulation and measurement results for the proposed scheme, which are highly consistent with one another, indicate a good insertion loss about 3.1 dB, input return loss of 20 dB and isolation of 20 dB, while sustaining high-power handling capability over the Wilkinson power divider.

  13. Novel zero voltage transition pulse width modulation flyback converter

    Science.gov (United States)

    Adib, Ehsan; Farzanehfard, Hosein

    2010-09-01

    In this article, a new zero voltage (ZV) transition flyback converter is introduced which uses a simple auxiliary circuit. In this converter, ZV switching condition is achieved for the converter switch while zero current switching condition is attained for the auxiliary switch. There is no additional voltage and current stress on the main switch. Main diode, auxiliary circuit voltage and current ratings are low. The proposed converter is analysed and design procedure is discussed. The presented experimental results of a prototype converter justify the theoretical analysis.

  14. Reproducible and controllable induction voltage adder for scaled beam experiments

    Energy Technology Data Exchange (ETDEWEB)

    Sakai, Yasuo; Nakajima, Mitsuo; Horioka, Kazuhiko [Department of Energy Sciences, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan)

    2016-08-15

    A reproducible and controllable induction adder was developed using solid-state switching devices and Finemet cores for scaled beam compression experiments. A gate controlled MOSFET circuit was developed for the controllable voltage driver. The MOSFET circuit drove the induction adder at low magnetization levels of the cores which enabled us to form reproducible modulation voltages with jitter less than 0.3 ns. Preliminary beam compression experiments indicated that the induction adder can improve the reproducibility of modulation voltages and advance the beam physics experiments.

  15. Collective of mechatronics circuit

    International Nuclear Information System (INIS)

    1987-02-01

    This book is composed of three parts, which deals with mechatronics system about sensor, circuit and motor. The contents of the first part are photo sensor of collector for output, locating detection circuit with photo interrupts, photo sensor circuit with CdS cell and lamp, interface circuit with logic and LED and temperature sensor circuit. The second part deals with oscillation circuit with crystal, C-R oscillation circuit, F-V converter, timer circuit, stability power circuit, DC amp and DC-DC converter. The last part is comprised of bridge server circuit, deformation bridge server, controlling circuit of DC motor, controlling circuit with IC for PLL and driver circuit of stepping motor and driver circuit of Brushless.

  16. Collective of mechatronics circuit

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1987-02-15

    This book is composed of three parts, which deals with mechatronics system about sensor, circuit and motor. The contents of the first part are photo sensor of collector for output, locating detection circuit with photo interrupts, photo sensor circuit with CdS cell and lamp, interface circuit with logic and LED and temperature sensor circuit. The second part deals with oscillation circuit with crystal, C-R oscillation circuit, F-V converter, timer circuit, stability power circuit, DC amp and DC-DC converter. The last part is comprised of bridge server circuit, deformation bridge server, controlling circuit of DC motor, controlling circuit with IC for PLL and driver circuit of stepping motor and driver circuit of Brushless.

  17. Two-Volt Josephson Arbitrary Waveform Synthesizer Using Wilkinson Dividers

    Science.gov (United States)

    Flowers-Jacobs, Nathan E.; Fox, Anna E.; Dresselhaus, Paul D.; Schwall, Robert E.; Benz, Samuel P.

    2016-01-01

    The root-mean-square (rms) output voltage of the NIST Josephson arbitrary waveform synthesizer (JAWS) has been doubled from 1 V to a record 2 V by combining two new 1 V chips on a cryocooler. This higher voltage will improve calibrations of ac thermal voltage converters and precision voltage measurements that require state-of-the-art quantum accuracy, stability, and signal-to-noise ratio. We achieved this increase in output voltage by using four on-chip Wilkinson dividers and eight inner-outer dc blocks, which enable biasing of eight Josephson junction (JJ) arrays with high-speed inputs from only four high-speed pulse generator channels. This approach halves the number of pulse generator channels required in future JAWS systems. We also implemented on-chip superconducting interconnects between JJ arrays, which reduces systematic errors and enables a new modular chip package. Finally, we demonstrate a new technique for measuring and visualizing the operating current range that reduces the measurement time by almost two orders of magnitude and reveals the relationship between distortion in the output spectrum and output pulse sequence errors. PMID:27453676

  18. Reduced Voltage Scaling in Clock Distribution Networks

    Directory of Open Access Journals (Sweden)

    Khader Mohammad

    2009-01-01

    Full Text Available We propose a novel circuit technique to generate a reduced voltage swing (RVS signals for active power reduction on main buses and clocks. This is achieved without performance degradation, without extra power supply requirement, and with minimum area overhead. The technique stops the discharge path on the net that is swinging low at a certain voltage value. It reduces active power on the target net by as much as 33% compared to traditional full swing signaling. The logic 0 voltage value is programmable through control bits. If desired, the reduced-swing mode can also be disabled. The approach assumes that the logic 0 voltage value is always less than the threshold voltage of the nMOS receivers, which eliminate the need of the low to high voltage translation. The reduced noise margin and the increased leakage on the receiver transistors using this approach have been addressed through the selective usage of multithreshold voltage (MTV devices and the programmability of the low voltage value.

  19. Protection of toroidal field coils using multiple circuits

    International Nuclear Information System (INIS)

    Thome, R.J.; Langton, W.G.; Mann, W.R.; Pillsbury, R.D.; Tarrh, J.M.

    1983-01-01

    The protection of toroidal field (TF) coils using multiple circuits is described. The discharge of a single-circuit TF system is given for purposes of definition. Two-circuit TF systems are analyzed and the results presented analytically and graphically. Induced currents, maximum discharge voltages, and discharge time constants are compared to the single-circuit system. Three-circuit TF systems are analyzed. In addition to induced currents, maximum discharge voltages, and time constants, several different discharge scenarios are included. The impacts of having discharge rates versus final maximum coil temperatures as requirements are examined. The out-of-plane forces which occur in the three-circuit system are analyzed using an approximate model. The analysis of multiplecircuit TF systems is briefly described and results for a Toroidal Fusion Core Experiment (TFCX) scale device are given based on computer analysis. The advantages and disadvantages of using multiple-circuit systems are summarized and discussed. The primary disadvantages of multiple circuits are the increased circuit complexity and potential for out-of-plane forces. These are offset by the substantial reduction in maximum discharge voltages, as well as other design options which become available when using multiple circuits

  20. Harmonic-suppressed quadrature-input frequency divider for OFDM systems

    International Nuclear Information System (INIS)

    Fu Haipeng; Ren Junyan; Li Wei; Li Ning

    2011-01-01

    A fully balanced harmonic-suppressed quadrature-input frequency divider is proposed. The frequency divider improves the quadrature phase accuracy at the output by using both input I/Q signals. Compared with conventional dividers, the circuit achieves an output I/Q phase sequence that is independent of the input I/Q phase sequence. Moreover, the third harmonic is effectively suppressed by employing a double degeneration technique. The design is fabricated in TSMC 0.13-μm CMOS and operated at 1.2 V. While locked at 8.5 GHz, the proposed divider measures a maximum third harmonic rejection of 45 dB and a phase noise of −124 dBc/Hz at a 10 MHz offset. The circuit achieves a locking range of 15% while consuming a total current of 4.5 mA. (semiconductor integrated circuits)

  1. Environment, information divide and design

    International Nuclear Information System (INIS)

    Iwata, Shuichi

    2007-01-01

    Design of human environment is to be made with understanding human-human and human-environment relations and environmental behaviors of human beings, artifacts and natural things and overcoming their differences and contradictions. Information divide exists naturally due to various differences of human beings. Many problems in the area of nuclear energy seem to be derived from various differences and contradictions in central-local interests, between the particles concerned and unconcerned and also in human being-artifacts relations. In order to harmonize nuclear energy with the society, it is necessary to vanish differences and solve contradictions with redesigning environments of those problems in their context. Case studies are highly recommended with continuous efforts to develop more universal design methodology. Open access to information and data in science and technology is encouraged in the area of nuclear energy. (T. Tanaka)

  2. Circuit parties.

    Science.gov (United States)

    Guzman, R

    2000-03-01

    Circuit parties are extended celebrations, lasting from a day to a week, primarily attended by gay and bisexual men in their thirties and forties. These large-scale dance parties move from city to city and draw thousands of participants. The risks for contracting HIV during these parties include recreational drug use and unsafe sex. Limited data exists on the level of risk at these parties, and participants are skeptical of outside help because of past criticism of these events. Health care and HIV advocates can promote risk-reduction strategies with the cooperation of party planners and can counsel individuals to personally reduce their own risk. To convey the message, HIV prevention workers should emphasize positive and community-centered aspects of the parties, such as taking care of friends and avoiding overdose.

  3. Single-event transients (SET) in analog circuits

    International Nuclear Information System (INIS)

    Chen Panxun; Zhou Kaiming

    2006-01-01

    A new phenomenon of single- event upset is introduced. The transient signal is produced in the output of analog circuits after a heavy ion strikes. The transient upset can influence the circuit connected with the output of analog circuits. For example, the output of operational amplifier can be connected with the input of a digital counter, and the pulse of sufficiently high transient output induced by an ion can increase counts of the counter. On the other hand, the transient voltage signal at the output of analog circuits can change the stage of other circuits. (authors)

  4. Synchronization circuit for shaping electron beam picosecond pulses

    International Nuclear Information System (INIS)

    Pavlov, Yu.S.; Solov'ev, N.G.; Tomnikov, A.P.

    1985-01-01

    A fast response circuit of modulator trigger pulse synchronization of a deflector of the electron linear accelerator at 13 MeV with the given phase of HF-voltage is described. The circuit is constructed using K500 and K100 integrated emitter-coupled logics circuits. Main parameters of a synchropulse are duration of 20-50 ns, pulse rise time of 1-5 ns, pulse amplitude >=10 V, delay instability of a trigger pulse <=+-0.05 ns. A radiopulse with 3 μs duration, 5 V amplitude and 400 Hz frequency enters the circuit input. The circuit can operate at both pulsed operation and continuous modes

  5. New equivalent lumped electrical circuit for piezoelectric transformers.

    Science.gov (United States)

    Gonnard, Paul; Schmitt, P M; Brissaud, Michel

    2006-04-01

    A new equivalent circuit is proposed for a contour-vibration-mode piezoelectric transformer (PT). It is shown that the usual lumped equivalent circuit derived from the conventional Mason approach is not accurate. The proposed circuit, built on experimental measurements, makes an explicit difference between the elastic energies stored respectively on the primary and secondary parts. The experimental and theoretical resonance frequencies with the secondary in open or short circuit are in good agreement as well as the output "voltage-current" characteristic and the optimum efficiency working point. This circuit can be extended to various PT configurations and appears to be a useful tool for modeling electronic devices that integrate piezoelectric transformers.

  6. Double input converters for different voltage sources with isolated charger

    Directory of Open Access Journals (Sweden)

    Chalash Sattayarak

    2014-09-01

    Full Text Available This paper presents the double input converters for different voltage input sources with isolated charger coils. This research aims to increase the performance of the battery charger circuit. In the circuit, there are the different voltage levels of input source. The operating modes of the switch in the circuit use the microcontroller to control the battery charge and to control discharge mode automatically when the input voltage sources are lost from the system. The experimental result of this research shows better performance for charging at any time period of the switch, while the voltage input sources work together. Therefore, this research can use and develop to battery charger for present or future.

  7. Implementation of floating gate MOSFET in inverter for threshold voltage tunability

    Directory of Open Access Journals (Sweden)

    Musa F.A.S.

    2017-01-01

    Full Text Available This paper presents the ability of floating gate MOSFET (FGMOS threshold voltage to be programmed or tuned which is exploited to improve the performance of electronic circuit design. This special characteristic owns by FGMOS is definitely contributes towards low voltage and low power circuit design. The comparison of threshold voltage between FGMOS and conventional NMOS is done in order to prove that FGMOS is able to produce a lower threshold voltage compared to conventional NMOS. In addition, in this paper, an implementation of FGMOS into inverter circuit is also done to show the programmability of FGMOS threshold voltage. The operations of the inverter circuits are verified using Sypnopsys simulation in 0.1μm CMOS technology with supply voltage of 1.8V.

  8. A New Simple Chaotic Circuit Based on Memristor

    Science.gov (United States)

    Wu, Renping; Wang, Chunhua

    In this paper, a new memristor is proposed, and then an emulator built from off-the-shelf solid state components imitating the behavior of the proposed memristor is presented. Multisim simulation and breadboard experiment are done on the emulator, exhibiting a pinched hysteresis loop in the voltage-current plane when the emulator is driven by a periodic excitation voltage. In addition, a new simple chaotic circuit is designed by using the proposed memristor and other circuit elements. It is exciting that this circuit with only a linear negative resistor, a capacitor, an inductor and a memristor can generate a chaotic attractor. The dynamical behaviors of the proposed chaotic system are analyzed by Lyapunov exponents, phase portraits and bifurcation diagrams. Finally, an electronic circuit is designed to implement the chaotic system. For the sake of simple circuit topology, the proposed chaotic circuit can be easily manufactured at low cost.

  9. Device, system and method for a sensing electrical circuit

    Science.gov (United States)

    Vranish, John M. (Inventor)

    2009-01-01

    The invention relates to a driven ground electrical circuit. A driven ground is a current-measuring ground termination to an electrical circuit with the current measured as a vector with amplification. The driven ground module may include an electric potential source V.sub.S driving an electric current through an impedance (load Z) to a driven ground. Voltage from the source V.sub.S excites the minus terminal of an operational amplifier inside the driven ground which, in turn, may react by generating an equal and opposite voltage to drive the net potential to approximately zero (effectively ground). A driven ground may also be a means of passing information via the current passing through one grounded circuit to another electronic circuit as input. It may ground one circuit, amplify the information carried in its current and pass this information on as input to the next circuit.

  10. Feedback analysis of transimpedance operational amplifier circuits

    DEFF Research Database (Denmark)

    Bruun, Erik

    1993-01-01

    The transimpedance or current feedback operational amplifier (CFB op-amp) is reviewed and compared to a conventional voltage mode op-amp using an analysis emphasizing the basic feedback characteristics of the circuit. With this approach the paradox of the constant bandwidth obtained from CFB op...

  11. Test-circuits for HVDC thyristor valves

    NARCIS (Netherlands)

    Thiele, G.; Alarovandi, G.; Bonfanti, I.; Cepek, M.; Dumrese, H.G.; Damstra, G.C.

    1997-01-01

    In conformity with the usual classification of the specified tests into two major categories, dielectric tests and operational tests, the report is in two parts : Part 1 - Dielectric tests which deals principally with test circuits for verifying the high voltage characteristics of the valve, and

  12. Fiber-optic voltage measuring system

    Science.gov (United States)

    Ye, Miaoyuan; Nie, De-Xin; Li, Yan; Peng, Yu; Lin, Qi-Qing; Wang, Jing-Gang

    1993-09-01

    A new fibre optic voltage measuring system has been developed based on the electrooptic effect of bismuth germanium oxide (Bi4Ge3O12)crystal. It uses the LED as the light source. The light beam emitted from the light source is transmitted to the sensor through the optic fibre and the intensity of the output beam is changed by the applied voltage. This optic signal is transmitted to the PIN detector and converted to an electric signal which is processed by the electronic circuit and 8098 single chip microcomputer the output voltage signal obtained is directly proportional to the applied voltage. This paper describes the principle the configuration and the performance parameters of the system. Test results are evaluated and discussed.

  13. High voltage pulse generator. [Patent application

    Science.gov (United States)

    Fasching, G.E.

    1975-06-12

    An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

  14. Experimental study on short-circuit characteristics of the new protection circuit of insulated gate bipolar transistor

    International Nuclear Information System (INIS)

    Ji, In-Hwan; Choi, Young-Hwan; Ha, Min-Woo; Han, Min-Koo; Choi, Yearn-Ik

    2006-01-01

    A new protection circuit employing the collector to emitter voltage (V CE ) sensing scheme for short-circuit withstanding capability of the insulated gate bipolar transistor (IGBT) is proposed and verified by experimental results. Because the current path between the gate and collector can be successfully eliminated in the proposed protection circuit, the power consumption can be reduced and the gate input impedance can be increased. Previous study is limited to dc characteristics. However, experimental results show that the proposed protection circuit successfully reduces the over-current of main IGBT by 80.4% under the short-circuit condition

  15. Accurate automatic tuning circuit for bipolar integrated filters

    NARCIS (Netherlands)

    de Heij, Wim J.A.; de Heij, W.J.A.; Hoen, Klaas; Hoen, Klaas; Seevinck, Evert; Seevinck, E.

    1990-01-01

    An accurate automatic tuning circuit for tuning the cutoff frequency and Q-factor of high-frequency bipolar filters is presented. The circuit is based on a voltage controlled quadrature oscillator (VCO). The frequency and the RMS (root mean square) amplitude of the oscillator output signal are

  16. TCAD analysis of short-circuit oscillations in IGBTs

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Iannuzzo, Francesco; Rahimo, Munaf

    2017-01-01

    Insulated-Gate Bipolar Transistors (IGBTs) exhibit a gate-voltage oscillation phenomenon during short-circuit, which can result in a gate-oxide breakdown. The oscillations have been investigated through device simulations and experimental investigations of a 3.3-kV IGBT. It has been found...... during short circuit....

  17. Power saving regulated light emitting diode circuit

    International Nuclear Information System (INIS)

    Haville, G. D.

    1985-01-01

    A power saving regulated light source circuit, comprising a light emitting diode (LED), a direct current source and a switching transistor connected in series with the LED, a control voltage producing resistor connected in series with the LED to produce a control voltage corresponding to the current through the LED, a storage capacitor connected in parallel with the series combination of the LED and the resistor, a comparator having its output connected to the input of the transistor, the comparator having a reference input and a control input, a stabilized biasing source for supplying a stabilized reference voltage to the reference input, the control input of the comparator being connected to the control voltage producing resistor, the comparator having a high output state when the reference voltage exceeds the control voltage while having a low output state when the control voltage exceeds the reference voltage, the transistor being conductive in response to the high state while being nonconductive in response to the low state, the transistor when conductive being effective to charge the capacitor and to increase the control voltage, whereby the comparator is cycled between the high and low output states while the transistor is cycled between conductive and nonconductive states

  18. Active Match Load Circuit Intended for Testing Piezoelectric Transformers

    DEFF Research Database (Denmark)

    Andersen, Thomas; Rødgaard, Martin Schøler; Andersen, Michael A. E.

    2012-01-01

    An adjustable high voltage active load circuit for voltage amplitudes above 100 volts, especially intended for resistive matching the output impedance of a piezoelectric transformer (PT) is proposed in this paper. PTs have been around for over 50 years, were C. A. Rosen is common known for his...

  19. Estimating the short-circuit impedance

    DEFF Research Database (Denmark)

    Nielsen, Arne Hejde; Pedersen, Knud Ole Helgesen; Poulsen, Niels Kjølstad

    1997-01-01

    A method for establishing a complex value of the short-circuit impedance from naturally occurring variations in voltage and current is discussed. It is the symmetrical three phase impedance at the fundamental grid frequency there is looked for. The positive sequence components in voltage...... and current are derived each period, and the short-circuit impedance is estimated from variations in these components created by load changes in the grid. Due to the noisy and dynamic grid with high harmonic distortion it is necessary to threat the calculated values statistical. This is done recursively...... through a RLS-algorithm. The algorithms have been tested and implemented on a PC at a 132 kV substation supplying a rolling mill. Knowing the short-circuit impedance gives the rolling mill an opportunity to adjust the arc furnace operation to keep flicker below a certain level. Therefore, the PC performs...

  20. Parameter tolerance of the SQUID bootstrap circuit

    International Nuclear Information System (INIS)

    Zhang Guofeng; Dong Hui; Xie Xiaoming; Jiang Mianheng; Zhang Yi; Krause, Hans-Joachim; Braginski, Alex I; Offenhäusser, Andreas

    2012-01-01

    We recently demonstrated and analysed the voltage-biased SQUID bootstrap circuit (SBC) conceived to suppress the preamplifier noise contribution in the absence of flux modulation readout. Our scheme contains both the additional voltage and current feedbacks. In this study, we analysed the tolerance of the SBC noise suppression performance to spreads in SQUID and SBC circuit parameters. Analytical results were confirmed by experiments. A one-time adjustable current feedback can be used to extend the tolerance to spreads such as those caused by the integrated circuit fabrication process. This should help to improve the fabrication yield of SBC devices integrated on one chip—as required for multi-channel SQUID systems.

  1. Study on quench detection of the KSTAR CS coil with CDA+MIK compensation of inductive voltages

    Energy Technology Data Exchange (ETDEWEB)

    An, Seok Chan; Kim, Jin Sub [Yonsei University, Seoul (Korea, Republic of); Chu, Yong [National Fusion Research Institute(NFRI), Daejeon (Korea, Republic of)

    2016-03-15

    Quench Detection System (QDS) is essential to guarantee the stable operation of the Korea Superconducting Tokamak Advanced Research (KSTAR) Poloidal Field (PF) magnet system because the stored energy in the magnet system is very large. For the fast response, voltage-based QDS has been used. Co-wound voltage sensors and balanced bridge circuits were applied to eliminate the inductive voltages generated during the plasma operation. However, as the inductive voltages are hundreds times higher than the quench detection voltage during the pulse-current operation, Central Difference Averaging (CDA) and MIK, where I and K stand for mutual coupling indexes of different circuits, which is an active cancellation of mutually generated voltages have been suggested and studied. In this paper, the CDA and MIK technique were applied to the KSTAR magnet for PF magnet quench detection. The calculated inductive voltages from the MIK and measured voltages from the CDA circuits were compared to eliminate the inductive voltages at result signals.

  2. Study on quench detection of the KSTAR CS coil with CDA+MIK compensation of inductive voltages

    International Nuclear Information System (INIS)

    An, Seok Chan; Kim, Jin Sub; Chu, Yong

    2016-01-01

    Quench Detection System (QDS) is essential to guarantee the stable operation of the Korea Superconducting Tokamak Advanced Research (KSTAR) Poloidal Field (PF) magnet system because the stored energy in the magnet system is very large. For the fast response, voltage-based QDS has been used. Co-wound voltage sensors and balanced bridge circuits were applied to eliminate the inductive voltages generated during the plasma operation. However, as the inductive voltages are hundreds times higher than the quench detection voltage during the pulse-current operation, Central Difference Averaging (CDA) and MIK, where I and K stand for mutual coupling indexes of different circuits, which is an active cancellation of mutually generated voltages have been suggested and studied. In this paper, the CDA and MIK technique were applied to the KSTAR magnet for PF magnet quench detection. The calculated inductive voltages from the MIK and measured voltages from the CDA circuits were compared to eliminate the inductive voltages at result signals

  3. Analog circuit design designing dynamic circuit response

    CERN Document Server

    Feucht, Dennis

    2010-01-01

    This second volume, Designing Dynamic Circuit Response builds upon the first volume Designing Amplifier Circuits by extending coverage to include reactances and their time- and frequency-related behavioral consequences.

  4. Comparison of modified driver circuit and capacitor-transfer circuit in longitudinally excited N2 laser.

    Science.gov (United States)

    Uno, Kazuyuki; Akitsu, Tetsuya; Nakamura, Kenshi; Jitsuno, Takahisa

    2013-04-01

    We developed a modified driver circuit composed of a capacitance and a spark gap, called a direct-drive circuit, for a longitudinally excited gas laser. The direct-drive circuit uses a large discharge impedance caused by a long discharge length of the longitudinal excitation scheme and eliminates the buffer capacitance used in the traditional capacitor-transfer circuit. We compared the direct-drive circuit and the capacitor-transfer circuit in a longitudinally excited N2 laser (wavelength: 337 nm). Producing high output energy with the capacitor-transfer circuit requires a large storage capacitance and a discharge tube with optimum dimensions (an inner diameter of 4 mm and a length of 10 cm in this work); in contrast, the direct-drive circuit requires a high breakdown voltage, achieved with a small storage capacitance and a large discharge tube. Additionally, for the same input energy of 792 mJ, the maximum output energy of the capacitor-transfer circuit was 174.2 μJ, and that of the direct-drive circuit was 344.7 μJ.

  5. Transmission of power at high voltages

    Energy Technology Data Exchange (ETDEWEB)

    Lane, F J

    1963-01-01

    High voltage transmission is considered to be concerned with circuits and systems operating at or above 132 kV. While the general examination is concerned with ac transmission, dc systems are also included. The choice of voltage for a system will usually involve hazardous assessments of the future requirements of industry, commerce and a changing population. Experience suggests that, if the estimated economic difference between two voltages is not significant, there is good reason to choose the higher voltage, as this will make the better provision for unexpected future expansion. Two principal functions served by transmission circuits in a supply system are: (a) the transportation of energy in bulk from the generator to the reception point in the distribution system; and (b) the interconnection and integration of the generating plant and associated loads. These functions are considered and various types of system are discussed in terms of practicability, viability, quality and continuity of supply. Future developments requiring transmission voltages up to 750 kV will raise many problems which are in the main empirical. Examples are given of the type of problem envisaged and it is suggested that these can only be partially solved by theory and model operation.

  6. The Southern Ocean biogeochemical divide.

    Science.gov (United States)

    Marinov, I; Gnanadesikan, A; Toggweiler, J R; Sarmiento, J L

    2006-06-22

    Modelling studies have demonstrated that the nutrient and carbon cycles in the Southern Ocean play a central role in setting the air-sea balance of CO(2) and global biological production. Box model studies first pointed out that an increase in nutrient utilization in the high latitudes results in a strong decrease in the atmospheric carbon dioxide partial pressure (pCO2). This early research led to two important ideas: high latitude regions are more important in determining atmospheric pCO2 than low latitudes, despite their much smaller area, and nutrient utilization and atmospheric pCO2 are tightly linked. Subsequent general circulation model simulations show that the Southern Ocean is the most important high latitude region in controlling pre-industrial atmospheric CO(2) because it serves as a lid to a larger volume of the deep ocean. Other studies point out the crucial role of the Southern Ocean in the uptake and storage of anthropogenic carbon dioxide and in controlling global biological production. Here we probe the system to determine whether certain regions of the Southern Ocean are more critical than others for air-sea CO(2) balance and the biological export production, by increasing surface nutrient drawdown in an ocean general circulation model. We demonstrate that atmospheric CO(2) and global biological export production are controlled by different regions of the Southern Ocean. The air-sea balance of carbon dioxide is controlled mainly by the biological pump and circulation in the Antarctic deep-water formation region, whereas global export production is controlled mainly by the biological pump and circulation in the Subantarctic intermediate and mode water formation region. The existence of this biogeochemical divide separating the Antarctic from the Subantarctic suggests that it may be possible for climate change or human intervention to modify one of these without greatly altering the other.

  7. High voltage systems

    International Nuclear Information System (INIS)

    Martin, M.

    1991-01-01

    Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

  8. Three-level boost converter with zero voltage transition

    Directory of Open Access Journals (Sweden)

    Kuo-Ing Hwu

    2017-06-01

    Full Text Available As compared with the traditional boost converter, the three-level boost converter possesses several advantages, such as lower switch voltage stresses and lower inductor current ripple. To improve the efficiency, this paper proposes a zero voltage transition (ZVT three-level boost converter. With the proposed ZVT circuit, the switches can achieve soft switching. Moreover, by using the voltage balance control, the output voltage can be equally across the output capacitors. In this study, the effectiveness of the proposed topology is verified by the experimental results based on the field-programmable gate array control.

  9. Silicon integrated circuits part A : supplement 2

    CERN Document Server

    Kahng, Dawon

    1981-01-01

    Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics. This book is divided into three chapters-physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated. This public

  10. Power electronics handbook components, circuits and applications

    CERN Document Server

    Mazda, F F

    1993-01-01

    Power Electronics Handbook: Components, Circuits, and Applications is a collection of materials about power components, circuit design, and applications. Presented in a practical form, theoretical information is given as formulae. The book is divided into three parts. Part 1 deals with the usual components found in power electronics such as semiconductor devices and power semiconductor control components, their electronic compatibility, and protection. Part 2 tackles parts and principles related to circuits such as switches; link frequency chargers; converters; and AC line control, and Part 3

  11. Voltage regulator for generator

    Energy Technology Data Exchange (ETDEWEB)

    Naoi, K

    1989-01-17

    It is an object of this invention to provide a voltage regulator for a generator charging a battery, wherein even if the ambient temperature at the voltage regulator rises abnormally high, possible thermal breakage of the semiconductor elements constituting the voltage regulator can be avoided. A feature of this invention is that the semiconductor elements can be protected from thermal breakage, even at an abnormal ambient temperature rise at the voltage regulator for the battery charging generator, by controlling a maximum conduction ratio of a power transistor in the voltage regulator in accordance with the temperature at the voltage regulator. This is achieved through a switching device connected in series to the field coil of the generator and adapted to be controlled in accordance with an output voltage of the generator and the ambient temperature at the voltage regulator. 6 figs.

  12. A single lithium-ion battery protection circuit with high reliability and low power consumption

    International Nuclear Information System (INIS)

    Jiang Jinguang; Li Sen

    2014-01-01

    A single lithium-ion battery protection circuit with high reliability and low power consumption is proposed. The protection circuit has high reliability because the voltage and current of the battery are controlled in a safe range. The protection circuit can immediately activate a protective function when the voltage and current of the battery are beyond the safe range. In order to reduce the circuit's power consumption, a sleep state control circuit is developed. Additionally, the output frequency of the ring oscillation can be adjusted continuously and precisely by the charging capacitors and the constant-current source. The proposed protection circuit is fabricated in a 0.5 μm mixed-signal CMOS process. The measured reference voltage is 1.19 V, the overvoltage is 4.2 V and the undervoltage is 2.2 V. The total power is about 9 μW. (semiconductor integrated circuits)

  13. A novel method for identification of lithium-ion battery equivalent circuit model parameters considering electrochemical properties

    Science.gov (United States)

    Zhang, Xi; Lu, Jinling; Yuan, Shifei; Yang, Jun; Zhou, Xuan

    2017-03-01

    This paper proposes a novel parameter identification method for the lithium-ion (Li-ion) battery equivalent circuit model (ECM) considering the electrochemical properties. An improved pseudo two-dimension (P2D) model is established on basis of partial differential equations (PDEs), since the electrolyte potential is simplified from the nonlinear to linear expression while terminal voltage can be divided into the electrolyte potential, open circuit voltage (OCV), overpotential of electrodes, internal resistance drop, and so on. The model order reduction process is implemented by the simplification of the PDEs using the Laplace transform, inverse Laplace transform, Pade approximation, etc. A unified second order transfer function between cell voltage and current is obtained for the comparability with that of ECM. The final objective is to obtain the relationship between the ECM resistances/capacitances and electrochemical parameters such that in various conditions, ECM precision could be improved regarding integration of battery interior properties for further applications, e.g., SOC estimation. Finally simulation and experimental results prove the correctness and validity of the proposed methodology.

  14. Analysis and design of a charge pump circuit for high output current applications

    NARCIS (Netherlands)

    van Steenwijk, Gijs; van Steenwijk, Gijs; Hoen, Klaas; Hoen, Klaas; Wallinga, Hans

    1993-01-01

    A charge pump circuit has been developed that can deliver high currents even for a system supply voltage of 3 V. The circuit consists of capacitances, connected by MOS switches. The influence of the on-resistance of the switches on the circuit's output resistance has been analysed. The switches are

  15. Solid state circuit controls direction, speed, and braking of dc motor

    Science.gov (United States)

    Hanna, M. F.

    1966-01-01

    Full-wave bridge rectifier circuit controls the direction, speed, and braking of a dc motor. Gating in the circuit of Silicon Controlled Rectifiers /SCRS/ controls output polarity and braking is provided by an SCR that is gated to short circuit the reverse voltage generated by reversal of motor rotation.

  16. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  17. An AMOLED AC-Biased Pixel Design Compensating the Threshold Voltage and I-R Drop

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2011-01-01

    Full Text Available We propose a novel pixel design and an AC bias driving method for active-matrix organic light-emitting diode (AM-OLED displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs. The proposed threshold voltage and I-R drop compensation circuit, which comprised three transistors and one capacitor, have been verified to supply uniform output current by simulation work using the Automatic Integrated Circuit Modeling Simulation Program with Integrated Circuit Emphasis (AIM-SPICE simulator. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<0.7% and low voltage drop of VDD power line. The proposed pixel circuit effectively enables threshold-voltage-deviation correction of driving TFT and compensates for the voltage drop of VDD power line using AC bias on OLED cathode.

  18. Achievable peak electrode voltage reduction by neurostimulators using descending staircase currents to deliver charge.

    Science.gov (United States)

    Halpern, Mark

    2011-01-01

    This paper considers the achievable reduction in peak voltage across two driving terminals of an RC circuit when delivering charge using a stepped current waveform, comprising a chosen number of steps of equal duration, compared with using a constant current over the total duration. This work has application to the design of neurostimulators giving reduced peak electrode voltage when delivering a given electric charge over a given time duration. Exact solutions for the greatest possible peak voltage reduction using two and three steps are given. Furthermore, it is shown that the achievable peak voltage reduction, for any given number of steps is identical for simple series RC circuits and parallel RC circuits, for appropriate different values of RC. It is conjectured that the maximum peak voltage reduction cannot be improved using a more complicated RC circuit.

  19. Quantum Effects of Mesoscopic Inductance and Capacity Coupling Circuits

    International Nuclear Information System (INIS)

    Liu Jianxin; Yan Zhanyuan; Song Yonghua

    2006-01-01

    Using the quantum theory for a mesoscopic circuit based on the discretenes of electric charges, the finite-difference Schroedinger equation of the non-dissipative mesoscopic inductance and capacity coupling circuit is achieved. The Coulomb blockade effect, which is caused by the discreteness of electric charges, is studied. Appropriately choose the components in the circuits, the finite-difference Schroedinger equation can be divided into two Mathieu equations in p-circumflex representation. With the WKBJ method, the currents quantum fluctuations in the ground states of the two circuits are calculated. The results show that the currents quantum zero-point fluctuations of the two circuits are exist and correlated.

  20. Digital logic circuit design with ALTERA MAX+PLUS II

    International Nuclear Information System (INIS)

    Lee, Seung Ho; Park, Yong Su; Lee, Ju Heon

    2006-03-01

    Contents of this book are the kinds of integrated circuit, design process of integrated circuit, introduction of ALTERA MAX+PLUS II, designing logic circuit with VHDL of ALTERA MAX+PLUS II, grammar and practice of VHDL of ALTERA MAX+PLUS II, design for adder, subtractor, parallel binary subtractor, BCD design, CLA design, code converter design, ALU design, register design, counter design, accumulator design, state machine design, frequency divider design, circuit design with TENMILLION counter, LCD module, circuit design for control the outside RAM in training kit and introduction for HEB-DTK-20K-240/HBE-DTK-IOK.

  1. Design and analysis of unequal split Bagley power dividers

    Science.gov (United States)

    Abu-Alnadi, Omar; Dib, Nihad; Al-Shamaileh, Khair; Sheta, Abdelfattah

    2015-03-01

    In this article, we propose a general design procedure to develop unequal split Bagley power dividers (BPDs). Based on the mathematical approach carried out in the insight of simple circuit and transmission line theories, exact design equations for 3-way and 5-way BPDs are derived. Utilising the developed equations leads to power dividers with the ability of offering different output power ratios through a suitable choice of the characteristic impedances of the interconnecting transmission lines. For verification purposes, a 1:2:1 3-way, 1:2:1:2:1 5-way and 1:3:1:3:1 5-way BPDs are designed and fabricated. The experimental and full-wave simulation results prove the validity of the designed unequal split BPDs.

  2. Test Time Reduction for BIST by Parallel Divide-and-Conquer Method

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Byung Gu; Kim, Dong Wook [Kwangwoon University (Korea)

    2000-06-01

    BIST(Built-in Self Test) has been considered as the most promising DFT(design-for-test) scheme for the present and future test strategy. The most serious problem in applying BIST(Built-in Self Test) into a large circuit is the excessive increase in test time. This paper is focused on this problem. We proposed a new BIST construction scheme which uses a parallel divide-and-conquer method. The circuit division is performed with respect to some internal nodes called test points. The test points are selected by considering the nodal connectivity of the circuit rather than the testability of each node. The test patterns are generated by only one linear feedback shift register(LFSR) and they are shared by all the divided circuits. Thus, the test for each divided circuit is performed in parallel. Test responses are collected from the test point as well as the primary outputs. Even though the divide-and-conquer scheme is used and test patterns are generated in one LFSR, the proposed scheme does not lose its pseudo-exhaustive property. We proposed a selection procedure to find the test points and it was implemented with C/C{sup ++} language. Several example circuits were applied to this procedure and the results showed that test time was reduced upto 1/2{sup 1}51 but the increase in the hardware overhead or the delay increase was not much high. Because the proposed scheme showed a tendency that the increasing rates in hardware overhead and delay overhead were less than that in test time reduction as the size of circuit increases, it is expected to be used efficiently for large circuits as VLSI and ULSI. (author). 15 refs., 7 figs., 5 tabs.

  3. Circuit analysis for dummies

    CERN Document Server

    Santiago, John

    2013-01-01

    Circuits overloaded from electric circuit analysis? Many universities require that students pursuing a degree in electrical or computer engineering take an Electric Circuit Analysis course to determine who will ""make the cut"" and continue in the degree program. Circuit Analysis For Dummies will help these students to better understand electric circuit analysis by presenting the information in an effective and straightforward manner. Circuit Analysis For Dummies gives you clear-cut information about the topics covered in an electric circuit analysis courses to help

  4. Load Insensitive, Low Voltage Quadrature Oscillator Using Single Active Element

    Directory of Open Access Journals (Sweden)

    Jitendra Mohan

    2017-01-01

    Full Text Available In this paper, a load insensitive quadrature oscillator using single differential voltage dual-X second generation current conveyor operated at low voltage is proposed. The proposed circuit employs single active element, three grounded resistors and two grounded capacitors. The proposed oscillator offers two load insensitive quadrature current outputs and three quadrature voltage outputs simultaneously. Effects of non-idealities along with the effects of parasitic are further studied. The proposed circuit enjoys the feature of low active and passive sensitivities. Additionally, a resistorless realization of the proposed quadrature oscillator is also explored. Simulation results using PSPICE program on cadence tool using 90 nm Complementary Metal Oxide Semiconductor (CMOS process parameters confirm the validity and practical utility of the proposed circuit.

  5. 30 CFR 77.704-2 - Repairs to energized high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repairs to energized high-voltage lines. 77.704... UNDERGROUND COAL MINES Grounding § 77.704-2 Repairs to energized high-voltage lines. An energized high-voltage... repairs will be performed on power circuits with a phase-to-phase nominal voltage no greater than 15,000...

  6. Tech, Teachers & Teens: Bridging the Divide

    Science.gov (United States)

    Stuht, Amy Colcord; Colcord, Cean

    2011-01-01

    In past decades, the "digital divide" referred to the gap between those who could afford access to technology and those who could not. The divide has shifted in recent years to reflect the growing technological chasm between teachers and their students: today's schools and teenagers' worlds. The digital divide is widening and deepening…

  7. Power Divider for Waveforms Rich in Harmonics

    Science.gov (United States)

    Sims, William Herbert, III

    2005-01-01

    A method for dividing the power of an electronic signal rich in harmonics involves the use of an improved divider topology. A divider designed with this topology could be used, for example, to propagate a square-wave signal in an amplifier designed with a push-pull configuration to enable the generation of more power than could be generated in another configuration.

  8. Simulation Analysis of DC and Switching Impulse Superposition Circuit

    Science.gov (United States)

    Zhang, Chenmeng; Xie, Shijun; Zhang, Yu; Mao, Yuxiang

    2018-03-01

    Surge capacitors running between the natural bus and the ground are affected by DC and impulse superposition voltage during operation in the converter station. This paper analyses the simulation aging circuit of surge capacitors by PSCAD electromagnetic transient simulation software. This paper also analyses the effect of the DC voltage to the waveform of the impulse voltage generation. The effect of coupling capacitor to the test voltage waveform is also studied. Testing results prove that the DC voltage has little effect on the waveform of the output of the surge voltage generator, and the value of the coupling capacitor has little effect on the voltage waveform of the sample. Simulation results show that surge capacitor DC and impulse superimposed aging test is feasible.

  9. Systems and methods for switched-inductor integrated voltage regulators

    Science.gov (United States)

    Shepard, Kenneth L.; Sturcken, Noah Andrew

    2017-12-12

    Power controller includes an output terminal having an output voltage, at least one clock generator to generate a plurality of clock signals and a plurality of hardware phases. Each hardware phase is coupled to the at least one clock generator and the output terminal and includes a comparator. Each hardware phase is configured to receive a corresponding one of the plurality of clock signals and a reference voltage, combine the corresponding clock signal and the reference voltage to produce a reference input, generate a feedback voltage based on the output voltage, compare the reference input and the feedback voltage using the comparator and provide a comparator output to the output terminal, whereby the comparator output determines a duty cycle of the power controller. An integrated circuit including the power controller is also provided.

  10. High voltage switches having one or more floating conductor layers

    Science.gov (United States)

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  11. Circuit for Driving Piezoelectric Transducers

    Science.gov (United States)

    Randall, David P.; Chapsky, Jacob

    2009-01-01

    The figure schematically depicts an oscillator circuit for driving a piezoelectric transducer to excite vibrations in a mechanical structure. The circuit was designed and built to satisfy application-specific requirements to drive a selected one of 16 such transducers at a regulated amplitude and frequency chosen to optimize the amount of work performed by the transducer and to compensate for both (1) temporal variations of the resonance frequency and damping time of each transducer and (2) initially unknown differences among the resonance frequencies and damping times of different transducers. In other words, the circuit is designed to adjust itself to optimize the performance of whichever transducer is selected at any given time. The basic design concept may be adaptable to other applications that involve the use of piezoelectric transducers in ultrasonic cleaners and other apparatuses in which high-frequency mechanical drives are utilized. This circuit includes three resistor-capacitor networks that, together with the selected piezoelectric transducer, constitute a band-pass filter having a peak response at a frequency of about 2 kHz, which is approximately the resonance frequency of the piezoelectric transducers. Gain for generating oscillations is provided by a power hybrid operational amplifier (U1). A junction field-effect transistor (Q1) in combination with a resistor (R4) is used as a voltage-variable resistor to control the magnitude of the oscillation. The voltage-variable resistor is part of a feedback control loop: Part of the output of the oscillator is rectified and filtered for use as a slow negative feedback to the gate of Q1 to keep the output amplitude constant. The response of this control loop is much slower than 2 kHz and, therefore, does not introduce significant distortion of the oscillator output, which is a fairly clean sine wave. The positive AC feedback needed to sustain oscillations is derived from sampling the current through the

  12. Advanced Microwave Circuits and Systems

    DEFF Research Database (Denmark)

    This book is based on recent research work conducted by the authors dealing with the design and development of active and passive microwave components, integrated circuits and systems. It is divided into seven parts. In the first part comprising the first two chapters, alternative concepts...... amplifier architectures. In addition, distortion analysis and power combining techniques are considered. Another key element in most microwave systems is a signal generator. It forms the heart of all kinds of communication and radar systems. The fourth part of this book is dedicated to signal generators...... push currently available technologies to the limits. Some considerations to meet the growing requirements are provided in the fifth part of this book. The following part deals with circuits based on LTCC and MEMS technologies. The book concludes with chapters considering application of microwaves...

  13. High-precision analog circuit technology for power supply integrated circuits; Dengen IC yo koseido anarogu kairo gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    Nakamori, A.; Suzuki, T.; Mizoe, K. [Fuji Electric Corporate Research and Development,Ltd., Kanagawa (Japan)

    2000-08-10

    With the recent rapid spread of portable electronic appliances, specification requirements such as compact power supply and long operation with batteries have become severer. Power supply ICs (integrated circuits) are required to reduce power consumption in the circuit and perform high-precision control. To meet these requirements, Fuji Electric develops high-precision CMOS (complementary metal-oxide semiconductor) analog technology. This paper describes three analog circuit technologies of a voltage reference, an operational amplifier and a comparator as circuit components particularly important for the precision of power supply ICs. (author)

  14. Three-phase short circuit calculation method based on pre-computed surface for doubly fed induction generator

    Science.gov (United States)

    Ma, J.; Liu, Q.

    2018-02-01

    This paper presents an improved short circuit calculation method, based on pre-computed surface to determine the short circuit current of a distribution system with multiple doubly fed induction generators (DFIGs). The short circuit current, injected into power grid by DFIG, is determined by low voltage ride through (LVRT) control and protection under grid fault. However, the existing methods are difficult to calculate the short circuit current of DFIG in engineering practice due to its complexity. A short circuit calculation method, based on pre-computed surface, was proposed by developing the surface of short circuit current changing with the calculating impedance and the open circuit voltage. And the short circuit currents were derived by taking into account the rotor excitation and crowbar activation time. Finally, the pre-computed surfaces of short circuit current at different time were established, and the procedure of DFIG short circuit calculation considering its LVRT was designed. The correctness of proposed method was verified by simulation.

  15. Ultra-Low Voltage Class AB Switched Current Memory Cell

    DEFF Research Database (Denmark)

    Igor, Mucha

    1996-01-01

    This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

  16. Optically triggered high voltage switch network and method for switching a high voltage

    Science.gov (United States)

    El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  17. Optically triggered high voltage switch network and method for switching a high voltage

    Energy Technology Data Exchange (ETDEWEB)

    El-Sharkawi, Mohamed A. (Renton, WA); Andexler, George (Everett, WA); Silberkleit, Lee I. (Mountlake Terrace, WA)

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  18. Improved Short-Circuit Protection for Power Cells in Series

    Science.gov (United States)

    Davies, Francis

    2008-01-01

    A scheme for protection against short circuits has been devised for series strings of lithium electrochemical cells that contain built-in short-circuit protection devices, which go into a high-resistance, current-limiting state when heated by excessive current. If cells are simply connected in a long series string to obtain a high voltage and a short circuit occurs, whichever short-circuit protection device trips first is exposed to nearly the full string voltage, which, typically, is large enough to damage the device. Depending on the specific cell design, the damage can defeat the protective function, cause a dangerous internal short circuit in the affected cell, and/or cascade to other cells. In the present scheme, reverse diodes rated at a suitably high current are connected across short series sub-strings, the lengths of which are chosen so that when a short-circuit protection device is tripped, the voltage across it does not exceed its rated voltage. This scheme preserves the resetting properties of the protective devices. It provides for bypassing of cells that fail open and limits cell reversal, though not as well as does the more-expensive scheme of connecting a diode across every cell.

  19. Effects of total dose of ionizing radiation on integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Silveira, Marcilei A.G.; Cirne, K.H.; Gimenez, S.; Santos, R.B.B. [Centro Universitario da FEI, Sao Bernardo do Campo, SP (Brazil); Added, N.; Barbosa, M.D.L.; Medina, N.H.; Tabacniks, M.H. [Universidade de Sao Paulo (IF/USP), SP (Brazil). Inst. de Fisica; Lima, J.A. de; Seixas Junior, L.E.; Melo, W. [Centro de Tecnologia da Informacao Paulo Archer, Sao Paulo, SP (Brazil)

    2011-07-01

    Full text: The study of ionizing radiation effects on materials used in electronic devices is of great relevance for the progress of global technological development and, particularly, it is a necessity in some strategic areas in Brazil. Electronic circuits are strongly influenced by radiation and the need for IC's featuring radiation hardness is largely growing to meet the stringent environment in space electronics. On the other hand, aerospace agencies are encouraging both scientific community and semiconductors industry to develop hardened-by-design components using standard manufacturing processes to achieve maximum performance, while significantly reducing costs. To understand the physical phenomena responsible for changes in devices exposed to ionizing radiation several kinds of radiation should then be considered, among them alpha particles, protons, gamma and X-rays. Radiation effects on the integrated circuits are usually divided into two categories: total ionizing dose (TID), a cumulative dose that shifts the threshold voltage and increases transistor's off-state current; single events effects (SEE), a transient effect which can deposit charge directly into the device and disturb the properties of electronic circuits. TID is one of the most common effects and may generate degradation in some parameters of the CMOS electronic devices, such as the threshold voltage oscillation, increase of the sub-threshold slope and increase of the off-state current. The effects of ionizing radiation are the creation of electron-hole pairs in the oxide layer changing operation mode parameters of the electronic device. Indirectly, there will be also changes in the device due to the formation of secondary electrons from the interaction of electromagnetic radiation with the material, since the charge carriers can be trapped both in the oxide layer and in the interface with the oxide. In this work we have investigated the behavior of MOSFET devices fabricated with

  20. Design and Implementation of a High Efficiency, Low Component Voltage Stress, Single-Switch High Step-Up Voltage Converter for Vehicular Green Energy Systems

    Directory of Open Access Journals (Sweden)

    Yu-En Wu

    2016-09-01

    Full Text Available In this study, a novel, non-isolated, cascade-type, single-switch, high step-up DC/DC converter was developed for green energy systems. An integrated coupled inductor and voltage lift circuit were applied to simplify the converter structure and satisfy the requirements of high efficiency and high voltage gain ratios. In addition, the proposed structure is controllable with a single switch, which effectively reduces the circuit cost and simplifies the control circuit. With the leakage inductor energy recovery function and active voltage clamp characteristics being present, the circuit yields optimizable conversion efficiency and low component voltage stress. After the operating principles of the proposed structure and characteristics of a steady-state circuit were analyzed, a converter prototype with 450 W, 40 V of input voltage, 400 V of output voltage, and 95% operating efficiency was fabricated. The Renesas MCU RX62T was employed to control the circuits. Experimental results were analyzed to validate the feasibility and effectiveness of the proposed system.