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Sample records for voltage dielectrically isolated

  1. Organic dielectrics in high voltage cables

    Energy Technology Data Exchange (ETDEWEB)

    Vermeer, J

    1962-03-01

    It appears that the limit has been reached in the applicability of oil-impregnated paper as the dielectric for ehv cables, as with rising voltages the prevention of conductor losses becomes increasingly difficult, while the dielectric losses of the insulation, increasing as the square of the voltage, contribute to a greater extent to the temperature rise of the conductor. The power transmitting capacity of ehv cables reaches a maximum at 500 to 600 kV for these reasons. Apart from artificial cooling, a substantial improvement can be obtained only with the use of insulating materials with much lower dielectric losses; these can moreover be applied with a smaller wall thickness, but this means higher field strengths. Synthetic polymer materials meet these requirements but can be used successfully only in the form of lapped film tapes impregnated with suitable liquids. The electrical properties of these heterogeneous dielectrics, in particular, their impulse breakdown strengths are studied in detail.

  2. Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

    Science.gov (United States)

    Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

    1998-01-01

    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  3. High voltage isolation transformer

    Science.gov (United States)

    Clatterbuck, C. H.; Ruitberg, A. P. (Inventor)

    1985-01-01

    A high voltage isolation transformer is provided with primary and secondary coils separated by discrete electrostatic shields from the surfaces of insulating spools on which the coils are wound. The electrostatic shields are formed by coatings of a compound with a low electrical conductivity which completely encase the coils and adhere to the surfaces of the insulating spools adjacent to the coils. Coatings of the compound also line axial bores of the spools, thereby forming electrostatic shields separating the spools from legs of a ferromagnetic core extending through the bores. The transformer is able to isolate a high constant potential applied to one of its coils, without the occurrence of sparking or corona, by coupling the coatings, lining the axial bores to the ferromagnetic core and by coupling one terminal of each coil to the respective coating encasing the coil.

  4. High voltage capacitor design and the determination of solid dielectric voltage breakdown

    International Nuclear Information System (INIS)

    Hutapea, S.

    1976-01-01

    The value of the external field intensity serves as an electrical insulating material and is a physical characteristic of the substance. Capacitor discharge in the dielectric medium are experimentally investigated. The high voltage power supply and other instrument needed are briefly discussed. Capacitors with working voltage of 30.000 volt and the plastic being used for dielectrics in the capacitors are also discussed. (author)

  5. Thin film silicon on silicon nitride for radiation hardened dielectrically isolated MISFET's

    International Nuclear Information System (INIS)

    Neamen, D.; Shedd, W.; Buchanan, B.

    1975-01-01

    The permanent ionizing radiation effects resulting from charge trapping in a silicon nitride isolation dielectric have been determined for a total ionizing dose up to 10 7 rads (Si). Junction FET's, whose active channel region is directly adjacent to the silicon-silicon nitride interface, were used to measure the effects of the radiation induced charge trapping in the Si 3 N 4 isolation dielectric. The JFET saturation current and channel conductance versus junction gate voltage and substrate voltage were characterized as a function of the total ionizing radiation dose. The experimental results on the Si 3 N 4 are compared to results on similar devices with SiO 2 dielectric isolation. The ramifications of using the silicon nitride for fabricating radiation hardened dielectrically isolated MIS devices are discussed

  6. High-voltage pulsed life of multistressed polypropylene capacitor dielectric

    International Nuclear Information System (INIS)

    Laghari, J.R.

    1992-01-01

    High-voltage polypropylene capacitors were aged under singular as well as simultaneous multiple stresses (electrical, thermal, and radiation) at the University of Buffalo's 2 MW thermal nuclear reactor. These stresses were combined neutron-gamma radiation with a total dose of 1.6 x 10 6 rad, electrical stress at 40 V rms /μm, and thermal stress at 90 degrees C. After exposure, the polypropylene dielectric was tested for life (number of pulses to fail) under high-voltage high-repetition-rate (100 pps) pulses. Pulsed life data were also compared with ac life data. Results show that radiation stress causes the most degradation in life, either acting alone or in combination with other stresses. The largest reduction in life occurs when polypropylene is aged under simultaneous multiple stresses (electrical, thermal, and radiation). In this paper, it is shown that pulsed life can be equivalently compared with ac life

  7. Dielectric isolation for power integrated circuits; Isolation dielectrique enterree pour les circuits integres de puissance

    Energy Technology Data Exchange (ETDEWEB)

    Zerrouk, D.

    1997-07-18

    Considerable efforts have been recently directed towards integrating onto the same chip, sense or protection elements that is low voltage analog and/or digital control circuitry together with high voltage/high current devices. Most of these so called `smart power` devices use either self isolation, junction isolation or Silicon-On-Insulator (SOI) to integrate low voltage elements with vertical power devices. Dielectric isolation is superior to the other isolation techniques such as self isolation or junction isolation. Thesis work consists of the study of the feasibility of a dielectric technology based on the melting and the solidification in a Rapid Thermal Processing furnace (RTP), of thick polysilicon films deposited on oxide. The purpose of this technique is to obtain substrate with localized SOI structures for smart power applications. SOI technology offers significant potential advantages, such as non-occurrence of latch-up in CMOS structures, high packaging density, low parasitic capacitance and the possibility of 3D structures. In addition, SOI technology using thick silicon films (10-100 {mu}m) offers special advantages for high voltage integrated circuits. Several techniques have been developed to form SOI films. Zone melting recrystallization is one of the most promising for localized SOI. The SOI structures have first been analyzed in term of extended defects. N-channel MOSFET`s transistors have also been fabricated in the SOI substrates and electrically characterized (threshold voltages, off-state leakage current, mobilities,...). The SOI transistors exhibit good characteristics, although inferior to witness transistors. The recrystallized silicon films are therefore found to be suitable for the fabrication of SOI devices. (author) 106 refs.

  8. High-Voltage Isolation Transformer

    Science.gov (United States)

    Clatterbuck, C. H.; Ruitberg, A. P.

    1985-01-01

    Arcing and field-included surface erosion reduced by electrostatic shields around windings and ferromagnetic core of 80-kilovolt isolation transformer. Fabricated from high-resistivity polyurethane-based material brushed on critical surfaces, shields maintained at approximately half potential difference of windings.

  9. Giant, Voltage-Actuated Deformation of a Dielectric Elastomer under Dead Load

    OpenAIRE

    Huang, Jiangshui; Li, Tiefeng; Foo, Choon Chiang; Clarke, David R.; Zhu, Jian; Suo, Zhigang

    2012-01-01

    Far greater voltage-actuated deformation is achievable for a dielectric elastomer under equal-biaxial dead load than under rigid constraint usually employed. Areal strains of 488% are demonstrated. The dead load suppresses electric breakdown, enabling the elastomer to survive the snap-through electromechanical instability. The breakdown voltage is found to increase with the voltage ramp rate. A nonlinear model for viscoelastic dielectric elastomers is developed and shown to be consistent with...

  10. Low pull-in voltage electrostatic MEMS switch using liquid dielectric

    KAUST Repository

    Zidan, Mohammed A.; Kosel, Jü rgen; Salama, Khaled N.

    2014-01-01

    In this paper, we present an electrostatic MEMS switch with liquids as dielectric to reduce the actuation voltage. The concept is verified by simulating a lateral dual gate switch, where the required pull-in voltage is reduced by more than 8 times

  11. Calculation of Onset Voltage of Sliding Discharge over a Dielectric Barrier

    Directory of Open Access Journals (Sweden)

    Abdel-Salam Mazen

    2016-01-01

    Full Text Available This paper is aimed at calculating the onset voltage of a sliding discharge established between two electrodes at the upper and bottom surfaces of a dielectric barrier plate; named sliding dielectric barrier discharge (SDBD driven by AC voltage during negative half cycle. The onset voltage is based on the condition of self-sustenance of avalanche growth in the vicinity of the stressed electrode. This calls at first for calculation of the electric field in the vicinity of stressed electrode. The dependency of onset voltage on the thickness and permittivity of the dielectric barrier as well as the thickness of the stressed electrode and the inter-electrode spacing between the stressed and ground electrodes is investigated. The obtained results are discussed in the light of gas discharge physics.

  12. Return voltage: reproductibility of lack in isolated plastics

    International Nuclear Information System (INIS)

    Frutos, F.; Acedo, M.; Jimenez, A.; Perez, J.A.

    1998-01-01

    Return voltage measures from plane-plane and point-plane experimental test objects of polyethylene are presented. Even though a lack of reproducibility is observed, all the experimental voltage curves can be modellized as the sum of two exponential functions: a first one with a long time period and a second one with a quite shorter time parameter. This analytical behaviour could be theoretically explained by considering an exponential dielectric function response. (Author) 7 refs

  13. Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics

    International Nuclear Information System (INIS)

    Kim, Se Hyun; Yun, Won Min; Kwon, Oh-Kwan; Hong, Kipyo; Yang, Chanwoo; Park, Chan Eon; Choi, Woon-Seop

    2010-01-01

    Here, we report on the fabrication of low-voltage-operating pentacene-based organic field-effect transistors (OFETs) that utilize crosslinked cyanoethylated poly(vinyl alcohol) (CR-V) gate dielectrics. The crosslinked CR-V-based OFET could be operated successfully at low voltages (below 4 V), but abnormal behaviour during device operation, such as uncertainty in the field-effect mobility (μ) and hysteresis, was induced by the slow polarization of moieties embedded in the gate dielectric (e.g. polar functionalities, ionic impurities, water and solvent molecules). In an effort to improve the stability of OFET operation, we measured the dependence of μ and hysteresis on dielectric thickness, CR-V crosslinking conditions and sweep rate of the gate bias. The influence of the CR-V surface properties on μ, hysteresis, and the structural and morphological features of the pentacene layer grown on the gate dielectric was characterized and compared with the properties of pentacene grown on a polystyrene surface.

  14. Low pull-in voltage electrostatic MEMS switch using liquid dielectric

    KAUST Repository

    Zidan, Mohammed A.

    2014-08-01

    In this paper, we present an electrostatic MEMS switch with liquids as dielectric to reduce the actuation voltage. The concept is verified by simulating a lateral dual gate switch, where the required pull-in voltage is reduced by more than 8 times after using water as a dielectric, to become as low as 5.36V. The proposed switch is simulated using COMSOL multiphysics using various liquid volumes to study their effect on the switching performance. Finally, we propose the usage of the lateral switch as a single switch XOR logic gate.

  15. Effect of voltage waveform on dielectric barrier discharge ozone production efficiency

    Science.gov (United States)

    Mericam-Bourdet, N.; Kirkpatrick, M. J.; Tuvache, F.; Frochot, D.; Odic, E.

    2012-03-01

    Dielectric barrier discharges (DBDs) are commonly used for gas effluent cleanup and ozone generation. For these applications, the energy efficiency of the discharge is a major concern. This paper reports on investigations carried out on the voltage shape applied to DBD reactor electrodes, aiming to evaluate a possible energy efficiency improvement for ozone production. Two DBD reactor geometries were used: pin-to-pin and cylinder-to-cylinder, both driven either by a bi-directional power supply (voltage rise rate 1 kV/μs) or by a pulsed power supply (voltage rise rate 1 kV/ns). Ozone formed in dry air was measured at the reactor outlet. Special attention was paid to discharge input power evaluation using different methods including instantaneous current-voltage product and transferred charge-applied voltage figures. The charge transferred by the discharges was also correlated to the ozone production. It is shown that, in the case of the DBD reactors under investigation, the applied voltage shape has no influence on the ozone production efficiency. For the considered voltage rise rate, the charge deposit on the dielectric inserted inside the discharge gap is the important factor (as opposed to the voltage shape) governing the efficiency of the discharge - it does this by tailoring the duration of the current peak into the tens of nanosecond range.

  16. Dielectric oil-based polymer actuator for improved thickness strain and breakdown voltage

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Min Sung; Yamamoto, Akio [Dept. of Precision Engineering, School of Engineering, The University of Tokyo, Tokyo (Japan)

    2016-09-15

    Dielectric elastomer actuators (DEAs) have been increasingly investigated as alternative actuators to conventional ones. However, DEAs suffer from high rates of premature failure. Therefore, this study proposes a dielectric oil-based polymer actuator, also called a Dielectric liquid actuator (DLA), to compensate for the drawbacks of DEAs. DLA was experimentally compared with conventional DEAs. Results showed that DLA successfully prevented thermal runaway at defects in the electrode and excessive thinning of the film, resulting in increased breakdown voltage. Consequently, premature failure was inhibited, and the performance was improved. The breakdown voltages of DLA and DEA were 6000 and 2000 V, respectively, and their maximum thickness strains were 49.5% and 37.5%, respectively.

  17. Dielectric oil-based polymer actuator for improved thickness strain and breakdown voltage

    International Nuclear Information System (INIS)

    Cho, Min Sung; Yamamoto, Akio

    2016-01-01

    Dielectric elastomer actuators (DEAs) have been increasingly investigated as alternative actuators to conventional ones. However, DEAs suffer from high rates of premature failure. Therefore, this study proposes a dielectric oil-based polymer actuator, also called a Dielectric liquid actuator (DLA), to compensate for the drawbacks of DEAs. DLA was experimentally compared with conventional DEAs. Results showed that DLA successfully prevented thermal runaway at defects in the electrode and excessive thinning of the film, resulting in increased breakdown voltage. Consequently, premature failure was inhibited, and the performance was improved. The breakdown voltages of DLA and DEA were 6000 and 2000 V, respectively, and their maximum thickness strains were 49.5% and 37.5%, respectively

  18. Time isolation high-voltage impulse generator

    International Nuclear Information System (INIS)

    Chodorow, A.M.

    1975-01-01

    Lewis' high-voltage impulse generator is analyzed in greater detail, demonstrating that voltage between adjacent nodes can be equalized by proper selection of parasitic impedances. This permits improved TEM mode propagation to a matched load, with more faithful source waveform preservation

  19. Compact, Lightweight, High Voltage Propellant Isolators, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — TA&T, Inc. proposes an enabling fabrication process for high voltage isolators required in high power solar electric and nuclear electric propulsion (SEP and...

  20. High-voltage atmospheric breakdown across intervening rutile dielectrics.

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, Kenneth Martin; Simpson, Sean; Coats, Rebecca Sue; Jorgenson, Roy Eberhardt; Hjalmarson, Harold Paul; Pasik, Michael Francis

    2013-09-01

    This report documents work conducted in FY13 on electrical discharge experiments performed to develop predictive computational models of the fundamental processes of surface breakdown in the vicinity of high-permittivity material interfaces. Further, experiments were conducted to determine if free carrier electrons could be excited into the conduction band thus lowering the effective breakdown voltage when UV photons (4.66 eV) from a high energy pulsed laser were incident on the rutile sample. This report documents the numerical approach, the experimental setup, and summarizes the data and simulations. Lastly, it describes the path forward and challenges that must be overcome in order to improve future experiments for characterizing the breakdown behavior for rutile.

  1. Adjustable threshold-voltage in all-inkjet-printed organic thin film transistor using double-layer dielectric structures

    International Nuclear Information System (INIS)

    Wu, Wen-Jong; Lee, Chang-Hung; Hsu, Chun-Hao; Yang, Shih-Hsien; Lin, Chih-Ting

    2013-01-01

    An all-inkjet-printed organic thin film transistor (OTFT) with a double-layer dielectric structure is proposed and implemented in this study. By using the double-layer structure with different dielectric materials (i.e., polyvinylphenol with poly(vinylidene fluoride-co-hexafluoropropylene)), the threshold-voltage of OTFT can be adjusted. The threshold-voltage shift can be controlled by changing the composition of dielectric layers. That is, an enhancement-mode OTFT can be converted to a depletion-mode OTFT by selectively printing additional dielectric layers to form a high-k/low-k double-layer structure. The printed OTFT has a carrier mobility of 5.0 × 10 −3 cm 2 /V-s. The threshold-voltages of the OTFTs ranged between − 13 V and 10 V. This study demonstrates an additional design parameter for organic electronics manufactured using inkjet printing technology. - Highlights: • A double-layer dielectric organic thin film transistor, OTFT, is implemented. • The threshold voltage of OTFT can be configured by the double dielectric structure. • The composition of the dielectric determines the threshold voltage shift. • The characteristics of OTFTs can be adjusted by double dielectric structures

  2. Electrical and optical characteristics of dielectric-barrier discharge driven by high voltage nanosecond generator

    International Nuclear Information System (INIS)

    Ahmadeev, V.V.; Kost'yuchenko, S.V.; Kudryavtsev, N.N.; Kurkin, G.A.; Vasilyak, L.M.

    1998-01-01

    Electrical and optical characteristics of the dielectric-barrier discharge in the pressure range of 10-400 Torr were investigated experimentally, particular attention being paid to the discharge homogeneity and to the energy dissipation in the discharge volume. The discharge was driven by a high-voltage pulse generator producing nanosecond high-voltage pulses with an amplitude of 20-30 kV. Air, nitrogen, and helium were used as working gases. The discharge was found to be homogeneous within a wide range of gas pressure. A power density of up to 250 mW/cm 3 has been achieved. (J.U.)

  3. Disintegration of rocks based on magnetically isolated high voltage discharge

    Science.gov (United States)

    He, Mengbing; Jiang, Jinbo; Huang, Guoliang; Liu, Jun; Li, Chengzu

    2013-02-01

    Recently, a method utilizing pulsed power technology for disintegration of rocks arouses great interest of many researchers. In this paper, an improved method based on magnetic switch and the results shown that the uniform dielectrics like plastic can be broken down in water is presented, and the feasible mechanism explaining the breakdown of solid is proposed and proved experimentally. A high voltage pulse of 120 kV, rise time 0.2 μs was used to ignite the discharging channel in solids. When the plasma channel is formed in the solid, the resistance of the channel is quiet small; even if a relatively low voltage is applied on the channel on this occasion, it will produce high current to heat the plasma channel rapidly, and eventually disintegrate the solids. The feasibility of promising industrial application in the drilling and demolition of natural and artificial solid materials by the method we presented is verified by the experiment result in the paper.

  4. Electrowetting on dielectric: experimental and model study of oil conductivity on rupture voltage

    Science.gov (United States)

    Zhao, Qing; Tang, Biao; Dong, Baoqin; Li, Hui; Zhou, Rui; Guo, Yuanyuan; Dou, Yingying; Deng, Yong; Groenewold, Jan; Henzen, Alexander Victor; Zhou, Guofu

    2018-05-01

    Electrowetting on dielectric devices uses a conducting (water) and insulating (oil) liquid phase in conjunction on a dielectric layer. In these devices, the wetting properties of the liquid phases can be manipulated by applying an electric field. The electric field can rupture the initially flat oil film and promotes further dewetting of the oil. Here, we investigate a problem in the operation of electrowetting on dielectric caused by a finite conductivity of the oil. In particular, we find that the voltage at which the oil film ruptures is sensitive to the application of relatively low DC voltages prior to switching. Here, we systematically investigate this dependence using controlled driving schemes. The mechanism behind these history effects point to charge transport processes in the dielectric and the oil, which can be modeled and characterized by a decay time. To quantify the effects the typical response timescales have been measured with a high-speed video camera. The results have been reproduced in simulations. In addition, a simplified yet accurate equivalent circuit model is developed to analyze larger data sets more conveniently. The experimental data support the hypothesis that each pixel can be characterized by a single decay time. We studied an ensemble of pixels and found that they showed a rather broad distribution of decay times with an average value of about 440 ms. This decay time can be interpreted as a discharge timescale of the oil, not to be confused with discharge of the entire system which is generally much faster (<1 ms). Through the equivalent circuit model, we also found that variations in the fluoropolymer (FP) conductivity cannot explain the distribution of decay times, while variations in oil conductivity can.

  5. Double input converters for different voltage sources with isolated charger

    Directory of Open Access Journals (Sweden)

    Chalash Sattayarak

    2014-09-01

    Full Text Available This paper presents the double input converters for different voltage input sources with isolated charger coils. This research aims to increase the performance of the battery charger circuit. In the circuit, there are the different voltage levels of input source. The operating modes of the switch in the circuit use the microcontroller to control the battery charge and to control discharge mode automatically when the input voltage sources are lost from the system. The experimental result of this research shows better performance for charging at any time period of the switch, while the voltage input sources work together. Therefore, this research can use and develop to battery charger for present or future.

  6. Primary Paralleled Isolated Boost Converter with Extended Operating Voltage Range

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos; Sen, Gökhan; Mira Albert, Maria del Carmen

    2012-01-01

    Applications requiring wide input and output voltage range cannot often be satisfied by using buck or boost derived topologies. Primary paralleled isolated boost converter (PPIBC) [1]-[2] is a high efficiency boost derived topology. This paper proposes a new operation mode for extending the input...

  7. Digital control of a high-voltage (2.5 kV) bidirectional DC-DC converter for driving a dielectric electro active polymer (DEAP) based capacitive actuator

    DEFF Research Database (Denmark)

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.

    2014-01-01

    This paper presents a digital control technique toachieve valley switching in a bidirectional flyback converterused to drive a dielectric electro active polymer basedincremental actuator. The incremental actuator consists ofthree electrically isolated, mechanically connected capacitiveactuators...... switchingtechnique during both charge and discharge processes, withoutthe need to sense signals on the output high-voltage side.Experimental results verifying the bidirectional operation of asingle high voltage flyback converter are presented, using afilm capacitor as the load. Energy efficiency measurements...

  8. Redefinition of the self-bias voltage in a dielectrically shielded thin sheath RF discharge

    Science.gov (United States)

    Ho, Teck Seng; Charles, Christine; Boswell, Rod

    2018-05-01

    In a geometrically asymmetric capacitively coupled discharge where the powered electrode is shielded from the plasma by a layer of dielectric material, the self-bias manifests as a nonuniform negative charging in the dielectric rather than on the blocking capacitor. In the thin sheath regime where the ion transit time across the powered sheath is on the order of or less than the Radiofrequency (RF) period, the plasma potential is observed to respond asymmetrically to extraneous impedances in the RF circuit. Consequently, the RF waveform on the plasma-facing surface of the dielectric is unknown, and the behaviour of the powered sheath is not easily predictable. Sheath circuit models become inadequate for describing this class of discharges, and a comprehensive fluid, electrical, and plasma numerical model is employed to accurately quantify this behaviour. The traditional definition of the self-bias voltage as the mean of the RF waveform is shown to be erroneous in this regime. Instead, using the maxima of the RF waveform provides a more rigorous definition given its correlation with the ion dynamics in the powered sheath. This is supported by a RF circuit model derived from the computational fluid dynamics and plasma simulations.

  9. Switch-mode High Voltage Drivers for Dielectric Electro Active Polymer (DEAP) Incremental Actuators

    DEFF Research Database (Denmark)

    Thummala, Prasanth

    voltage DC-DC converters for driving the DEAP based incremental actuators. The DEAP incremental actuator technology has the potential to be used in various industries, e.g., automotive, space and medicine. The DEAP incremental actuator consists of three electrically isolated and mechanically connected...

  10. Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

    Science.gov (United States)

    Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

    2012-04-01

    The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (pentacene thin film transistor (μ: ~2 cm(2)/(V s), on/off ratio, >1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

  11. Dynamic model based on voltage transfer curve for pattern formation in dielectric barrier glow discharge

    Energy Technology Data Exchange (ETDEWEB)

    Li, Ben; He, Feng; Ouyang, Jiting, E-mail: jtouyang@bit.edu.cn [School of Physics, Beijing Institute of Technology, Beijing 100081 (China); Duan, Xiaoxi [Research Center of Laser Fusion, CAEP, Mianyang 621900 (China)

    2015-12-15

    Simulation work is very important for understanding the formation of self-organized discharge patterns. Previous works have witnessed different models derived from other systems for simulation of discharge pattern, but most of these models are complicated and time-consuming. In this paper, we introduce a convenient phenomenological dynamic model based on the basic dynamic process of glow discharge and the voltage transfer curve (VTC) to study the dielectric barrier glow discharge (DBGD) pattern. VTC is an important characteristic of DBGD, which plots the change of wall voltage after a discharge as a function of the initial total gap voltage. In the modeling, the combined effect of the discharge conditions is included in VTC, and the activation-inhibition effect is expressed by a spatial interaction term. Besides, the model reduces the dimensionality of the system by just considering the integration effect of current flow. All these greatly facilitate the construction of this model. Numerical simulations turn out to be in good accordance with our previous fluid modeling and experimental result.

  12. Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

    Science.gov (United States)

    Williamson, James M.; Trump, Darryl D.; Bletzinger, Peter; Ganguly, Biswa N.

    2006-10-01

    A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s-1. The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of ~3 × 1015 cm-3 at 25 W. The maximum ozone production achieved by short-pulse excitation was ~8.5 × 1015 cm-3 at 20 W, which was four times greater than that achieved by ac excitation at the same power level.

  13. Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, James M [Innovative Scientific Solutions, Inc., 2766 Indian Ripple Road, Dayton, Ohio 45440-3638 (United States); Trump, Darryl D [Innovative Scientific Solutions, Inc., 2766 Indian Ripple Road, Dayton, Ohio 45440-3638 (United States); Bletzinger, Peter [Innovative Scientific Solutions, Inc., 2766 Indian Ripple Road, Dayton, Ohio 45440-3638 (United States); Ganguly, Biswa N [Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433-7919 (United States)

    2006-10-21

    A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s{sup -1}. The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of {approx}3 x 10{sup 15} cm{sup -3} at 25 W. The maximum ozone production achieved by short-pulse excitation was {approx}8.5 x 10{sup 15} cm{sup -3} at 20 W, which was four times greater than that achieved by ac excitation at the same power level.

  14. Voltage-controlled radial wrinkles of a trumpet-like dielectric elastomer structure

    Science.gov (United States)

    Mao, Guoyong; Wu, Lei; Fu, Yimou; Liu, Junjie; Qu, Shaoxing

    2018-03-01

    Wrinkle is usually considered as one failure mode of membrane structure. However, it can also be harnessed in developing smart devices such as dry adhesion tape, diffraction grating, smart window, etc. In this paper, we present a method to generate voltage-controlled radial wrinkles, which are fast response and reversible, in a stretched circular dielectric elastomer (DE) membrane with boundary fixed. In the experiment, we bond a circular plate on the center of the circular membrane and then pull the DE membrane perpendicular to itself via the plate. The stretched DE membrane is a trumpet-like structure. When the stretched DE membrane is subjected to a certain voltage, wrinkles nucleate from the center of the DE membrane and propagate to the boundary as the voltage increases. We adopt a theoretical framework to analyze the nucleation of the wrinkles. A simple wavelength expression is achieved, which is only related to the geometry and the stretch of the DE membrane. Results show that the theory agrees well with the experiment. This work may help the future design of DE actuators in avoiding mechanical instability and provide a new method to generate controllable radial DE wrinkles.

  15. Comparison of high-voltage ac and pulsed operation of a surface dielectric barrier discharge

    International Nuclear Information System (INIS)

    Williamson, James M; Trump, Darryl D; Bletzinger, Peter; Ganguly, Biswa N

    2006-01-01

    A surface dielectric barrier discharge (DBD) in atmospheric pressure air was excited either by low frequency (0.3-2 kHz) high-voltage ac or by short, high-voltage pulses at repetition rates from 50 to 600 pulses s -1 . The short-pulse excited discharge was more diffuse and did not have the pronounced bright multiple cathode spots observed in the ac excited discharge. The discharge voltage, current and average power deposited into the discharge were calculated for both types of excitation. As a measure of plasma-chemical efficiency, the ozone number density was measured by UV absorption as a function of average deposited power. The density of ozone produced by ac excitation did not increase so rapidly as that produced by short-pulse excitation as a function of average power, with a maximum measured density of ∼3 x 10 15 cm -3 at 25 W. The maximum ozone production achieved by short-pulse excitation was ∼8.5 x 10 15 cm -3 at 20 W, which was four times greater than that achieved by ac excitation at the same power level

  16. Characterization of ultraviolet light cured polydimethylsiloxane films for low-voltage, dielectric elastomer actuators

    Science.gov (United States)

    Töpper, Tino; Wohlfender, Fabian; Weiss, Florian; Osmani, Bekim; Müller, Bert

    2016-04-01

    The reduction the operation voltage has been the key challenge to realize of dielectric elastomer actuators (DEA) for many years - especially for the application fields of robotics, lens systems, haptics and future medical implants. Contrary to the approach of manipulating the dielectric properties of the electrically activated polymer (EAP), we intend to realize low-voltage operation by reducing the polymer thickness to the range of a few hundred nanometers. A study recently published presents molecular beam deposition to reliably grow nanometer-thick polydimethylsiloxane (PDMS) films. The curing of PDMS is realized using ultraviolet (UV) radiation with wavelengths from 180 to 400 nm radicalizing the functional side and end groups. The understanding of the mechanical properties of sub-micrometer-thin PDMS films is crucial to optimize DEAs actuation efficiency. The elastic modulus of UV-cured spin-coated films is measured by nano-indentation using an atomic force microscope (AFM) according to the Hertzian contact mechanics model. These investigations show a reduced elastic modulus with increased indentation depth. A model with a skin-like SiO2 surface with corresponding elastic modulus of (2.29 +/- 0.31) MPa and a bulk modulus of cross-linked PDMS with corresponding elastic modulus of (87 +/- 7) kPa is proposed. The surface morphology is observed with AFM and 3D laser microscopy. Wrinkled surface microstructures on UV-cured PDMS films occur for film thicknesses above (510 +/- 30) nm with an UV-irradiation density of 7.2 10-4 J cm-2 nm-1 at a wavelength of 190 nm.

  17. Integrated high voltage power supply utilizing burst mode control and its performance impact on dielectric electro active polymer actuators

    DEFF Research Database (Denmark)

    Andersen, Thomas; Rødgaard, Martin Schøler; Andersen, Michael A. E.

    Through resent years new high performing Dielectric Electro Active Polymers (DEAP) have emerged. To fully utilize the potential of DEAPs a driver with high voltage output is needed. In this paper a piezoelectric transformer based power supply for driving DEAP actuators is developed, utilizing...

  18. Life estimation and analysis of dielectric strength, hydrocarbon backbone and oxidation of high voltage multi stressed EPDM composites

    Science.gov (United States)

    Khattak, Abraiz; Amin, Muhammad; Iqbal, Muhammad; Abbas, Naveed

    2018-02-01

    Micro and nanocomposites of ethylene propylene diene monomer (EPDM) are recently studied for different characteristics. Study on life estimation and effects of multiple stresses on its dielectric strength and backbone scission and oxidation is also vital for endorsement of these composites for high voltage insulation and other outdoor applications. In order to achieve these goals, unfilled EPDM and its micro and nanocomposites are prepared at 23 phr micro silica and 6 phr nanosilica loadings respectively. Prepared samples are energized at 2.5 kV AC voltage and subjected for a long time to heat, ultraviolet radiation, acid rain, humidity and salt fog in accelerated manner in laboratory. Dielectric strength, leakage current and intensity of saturated backbone and carbonyl group are periodically measured. Loss in dielectric strength, increase in leakage current and backbone degradation and oxidation were observed in all samples. These effects were least in the case of EPDM nanocomposite. The nanocomposite sample also demonstrated longest shelf life.

  19. Influence of the polarity of the applied voltage on the reignition of a discharge below a dielectric layer in air at atmospheric pressure

    International Nuclear Information System (INIS)

    Pechereau, François; Bourdon, Anne

    2014-01-01

    The dynamics of an atmospheric pressure air discharge in a point-to-plane geometry with a dielectric layer obstacle on the discharge path is investigated numerically for different applied voltages. Whatever the polarity of the voltage applied, first, a streamer discharge of the same polarity ignites at the point and propagates towards the dielectric layer. After the impact on the dielectric surface, the streamer discharge spreads along the upper dielectric surface and charges it positively or negatively depending on its polarity. On the bottom surface of the dielectric layer, charges with an opposite polarity are deposited. Surface charges on both faces of the dielectric layer are shown to have a significant influence on the discharge reignition for a negative applied voltage, but not for a positive one. Furthermore, it is shown that the dynamics of the discharge reignition below the dielectric layer depends on the polarity of the applied voltage at the point electrode. For a positive applied voltage, the reignited discharge is a positive ionization wave propagating towards the grounded plane. For a negative applied voltage, a double headed discharge is observed with positive and negative fronts propagating in opposite directions. Finally, the minimal value of the ionization integral to have a discharge reignition below the dielectric obstacle is found to be less for a negative applied voltage than for a positive one. (paper)

  20. Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

    Science.gov (United States)

    Das, Amit Kumar; Meikap, Ajit Kumar

    2017-12-01

    In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

  1. Current-voltage hysteresis and dielectric properties of PVA coated MWCNT film

    Science.gov (United States)

    Das, Amit Kumar; Meikap, Ajit Kumar

    2018-06-01

    In this work, we have prepared polyvinyl alcohol (PVA) coated multiwall carbon nanotube (MWCNT) film by an in situ chemical oxidative preparation technique. The thermogravimetric analysis clearly explains the thermal degradation of pure polymer and polymer nanocomposite film. We have studied the AC electrical transport properties and current-voltage (I-V) characteristic of PVA-MWCNT composites within the temperature range 300 ≤ T ≤ 423 K and frequency range 150 Hz ≤ f ≤ 2 MHz. It is observed that the dielectric constant of the composite film increases significantly. The frequency variation of AC conductivity follows the power law ( ωS ) and a sharp transition from small polaron tunneling to correlated barrier hopping model is found. The imaginary part of electric modulus shows non-Debye type asymmetric behaviour. The impedance spectroscopy shows the negative temperature coefficient of resistance of the composite film. Nyquist plot of the composite film at different temperatures is established from impedance measurement. The current-voltage characteristic (under ± 20 V) shows hysteresis behaviour and field dependent resistance. We simulate the experimentally observed current density-electric field data with the established theory.

  2. AN OVERVIEW OF HIGH VOLTAGE DIELECTRIC MATERIAL FOR TRAVELING WAVE KICKER MAGNET APPLICATION

    International Nuclear Information System (INIS)

    ZHANG, W.; SANDBERG, J.; TUOZZOLO, J.; CASSEL, R.; DUCIMETIERE, L.; JENSEN, C.; BARNES, M.; WAIT, G.; WANG, J.

    2002-01-01

    Pulsed high power fast kickers are being used to change beam trajectories in particle accelerators. The fast rise and fall time of pulse waveform demands a transmission line structure for the kicker deflector design. The ideal design will be parallel metal plates. However, it uses very long straight sections to achieve the required deflection. In accelerators with constrained straight sections, high permeability materials such as ferrite have to be used to gain deflection efficiency. The transmission line kicker magnet is also referred as traveling wave kicker magnet. Its construction is based on distributed 1-C cells along the longitudinal direction. The magnetic cells and capacitive cells are interleaved to simulate the characteristic impedance of a transmission line to minimize pulse reflection, and provide adequate frequency bandwidth to transmit the kicker pulse with fast rise and fall time. The magnetic cells are usually made of ferrite ceramics, but the capacitive cells have been made with different materials. For traveling wave kickers with higher impedance, the parallel plate vacuum capacitor has been used in CERN and KEK design. Others have used ceramic capacitors, printed circuit boards, and high permittivity ceramics as the capacitive cell. The high dielectric material has the advantage of compactness for low impedance kicker magnet construction. It continues to be very attractive for future kicker magnet applications. The high voltage phenomena associated with high dielectric ceramic materials have been widely reported in many industrial application areas. Their implication in the traveling wave magnet application has to be well understood. In this presentation, the areas requiring further quantitative study will be outlined

  3. Low operating voltage n-channel organic field effect transistors using lithium fluoride/PMMA bilayer gate dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S.; Dhar, A., E-mail: adhar@phy.iitkgp.ernet.in

    2015-10-15

    Highlights: • Alternative to chemically crosslinking of PMMA to achieve low leakage in provided. • Effect of LiF in reducing gate leakage through the OFET device is studied. • Effect of gate leakage on transistor performance has been investigated. • Low voltage operable and low temperature processed n-channel OFETs were fabricated. - Abstract: We report low temperature processed, low voltage operable n-channel organic field effect transistors (OFETs) using N,N′-Dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C{sub 8}) organic semiconductor and poly(methylmethacrylate) (PMMA)/lithium fluoride (LiF) bilayer gate dielectric. We have studied the role of LiF buffer dielectric in effectively reducing the gate leakage through the device and thus obtaining superior performance in contrast to the single layer PMMA dielectric devices. The bilayer OFET devices had a low threshold voltage (V{sub t}) of the order of 5.3 V. The typical values of saturation electron mobility (μ{sub s}), on/off ratio and inverse sub-threshold slope (S) for the range of devices made were estimated to be 2.8 × 10{sup −3} cm{sup 2}/V s, 385, and 3.8 V/decade respectively. Our work thus provides a potential substitution for much complicated process of chemically crosslinking PMMA to achieve low leakage, high capacitance, and thus low operating voltage OFETs.

  4. Numerical investigation of the effect of driving voltage pulse shapes on the characteristics of low-pressure argon dielectric barrier discharge

    International Nuclear Information System (INIS)

    Eslami, E.; Barjasteh, A.; Morshedian, N.

    2015-01-01

    In this work, we numerically compare the effect of a sinusoidal, triangular, and rectangular pulsed voltage profile on the calculated particle production, electric current, and gas voltage in a dielectric barrier discharge. The total argon gas pressure of 400 Pa, the distance between dielectrics of 5 mm, the dielectric thickness of 0.7 mm, and the temperature of T = 300 K were considered as input parameters. The different driving voltage pulse shapes (triangular, rectangular, and sinusoidal) are considered as applied voltage with a frequency of 7 kHz and an amplitude of 700 V peak to peak. It is shown that applying a rectangular voltage, as compared with a sinusoidal or triangle voltage, increases the current peak, while the peak width is decreased. Higher current density is related to high production of charged particles, which leads to the generation of some highly active species, such as Ar* (4s level), and Ar** (4p level) in the gap

  5. Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

    Science.gov (United States)

    Yoon, Myung-Han

    Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on

  6. Towards low-voltage organic thin film transistors (OTFTs with solution-processed high-k dielectric and interface engineering

    Directory of Open Access Journals (Sweden)

    Yaorong Su

    2015-11-01

    Full Text Available Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs, the high operation voltage resulting from the low gate capacitance density of traditional SiO2 remains a severe limitation that hinders OTFTs'development in practical applications. In this regard, developing new materials with high-k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. Here, we introduce a simple solution-based technique to fabricate high-k metal oxide dielectric system (ATO at low-temperature, which can be used effectively to realize low-voltage operation of OTFTs. On the other hand, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. By optimizing the above two interfaces with octadecylphosphonic acid (ODPA self-assembled monolayer (SAM and properly modified low-cost Cu, obviously improved device performance is attained in our low-voltage OTFTs. Further more, organic electronic devices on flexible substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. Basing on the above results, outstanding electrical performance is achieved in flexible devices. Our studies demonstrate an effective way to realize low-voltage, high-performance OTFTs at low-cost.

  7. Dielectric properties of isolated clusters beam deflection studies

    CERN Document Server

    Heiles, Sven

    2013-01-01

    A broad range of state-of-the-art methods to determine properties of clusters are presented. The experimental setup and underlying physical concepts of these experiments are described. Furthermore, existing theoretical models to explain the experimental observations are introduced and the possibility to deduce structural information from measurements of dielectric properties is discussed. Additional case studies are presented in the book to emphasize the possibilities but also drawbacks of the methods.

  8. The formation of diffuse discharge by short-front nanosecond voltage pulses and the modification of dielectrics in this discharge

    Science.gov (United States)

    Orlovskii, V. M.; Panarin, V. A.; Shulepov, M. A.

    2014-07-01

    The dynamics of diffuse discharge formation under the action of nanosecond voltage pulses with short fronts (below 1 ns) in the absence of a source of additional preionization and the influence of a dielectric film on this process have been studied. It is established that the diffuse discharge is induced by the avalanche multiplication of charge initiated by high-energy electrons and then maintained due to secondary breakdowns propagating via ionized gas channels. If a dielectric film (polyethylene, Lavsan, etc.) is placed on the anode, then multiply repeated discharge will lead to surface and bulk modification of the film material. Discharge-treated polyethylene film exhibits a change in the optical absorption spectrum in the near-IR range.

  9. Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects.

    Science.gov (United States)

    Aghamohammadi, Mahdieh; Rödel, Reinhold; Zschieschang, Ute; Ocal, Carmen; Boschker, Hans; Weitz, R Thomas; Barrena, Esther; Klauk, Hagen

    2015-10-21

    The mechanisms behind the threshold-voltage shift in organic transistors due to functionalizing of the gate dielectric with self-assembled monolayers (SAMs) are still under debate. We address the mechanisms by which SAMs determine the threshold voltage, by analyzing whether the threshold voltage depends on the gate-dielectric capacitance. We have investigated transistors based on five oxide thicknesses and two SAMs with rather diverse chemical properties, using the benchmark organic semiconductor dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene. Unlike several previous studies, we have found that the dependence of the threshold voltage on the gate-dielectric capacitance is completely different for the two SAMs. In transistors with an alkyl SAM, the threshold voltage does not depend on the gate-dielectric capacitance and is determined mainly by the dipolar character of the SAM, whereas in transistors with a fluoroalkyl SAM the threshold voltages exhibit a linear dependence on the inverse of the gate-dielectric capacitance. Kelvin probe force microscopy measurements indicate this behavior is attributed to an electronic coupling between the fluoroalkyl SAM and the organic semiconductor.

  10. A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

    Science.gov (United States)

    Chaowen, Liu; Jingping, Xu; Lu, Liu; Hanhan, Lu; Yuan, Huang

    2016-02-01

    A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. Project supported by the National Natural Science Foundation of China (No. 61176100).

  11. A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

    International Nuclear Information System (INIS)

    Liu Chaowen; Xu Jingping; Liu Lu; Lu Hanhan; Huang Yuan

    2016-01-01

    A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. (paper)

  12. Analysis of Dielectric Electro Active Polymer Actuator and its High Voltage Driving Circuits

    DEFF Research Database (Denmark)

    Thummala, Prasanth; Huang, Lina; Zhang, Zhe

    2012-01-01

    Actuators based on dielectric elastomers have promising applications in artificial muscles, space robotics, mechatronics, micro-air vehicles, pneumatic and electric automation technology, heating valves, loud speakers, tissue engineering, surgical tools, wind turbine flaps, toys, rotary motors...

  13. A complementary organic inverter of porphyrazine thin films: low-voltage operation using ionic liquid gate dielectrics.

    Science.gov (United States)

    Fujimoto, Takuya; Miyoshi, Yasuhito; Matsushita, Michio M; Awaga, Kunio

    2011-05-28

    We studied a complementary organic inverter consisting of a p-type semiconductor, metal-free phthalocyanine (H(2)Pc), and an n-type semiconductor, tetrakis(thiadiazole)porphyrazine (H(2)TTDPz), operated through the ionic-liquid gate dielectrics of N,N-diethyl-N-methyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide (DEME-TFSI). This organic inverter exhibits high performance with a very low operation voltage below 1.0 V and a dynamic response up to 20 Hz. © The Royal Society of Chemistry 2011

  14. Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

    Science.gov (United States)

    Ma, Pengfei; Du, Lulu; Wang, Yiming; Jiang, Ran; Xin, Qian; Li, Yuxiang; Song, Aimin

    2018-01-01

    An ultrathin, 5 nm, Al2O3 film grown by atomic-layer deposition was used as a gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The Al2O3 layer showed a low surface roughness of 0.15 nm, a low leakage current, and a high breakdown voltage of 6 V. In particular, a very high gate capacitance of 720 nF/cm2 was achieved, making it possible for the a-IGZO TFTs to not only operate at a low voltage of 1 V but also exhibit desirable properties including a low threshold voltage of 0.3 V, a small subthreshold swing of 100 mV/decade, and a high on/off current ratio of 1.2 × 107. Furthermore, even under an ultralow operation voltage of 0.6 V, well-behaved transistor characteristics were still observed with an on/off ratio as high as 3 × 106. The electron transport through the Al2O3 layer has also been analyzed, indicating the Fowler-Nordheim tunneling mechanism.

  15. High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3 as gate dielectric

    International Nuclear Information System (INIS)

    Xia, D X; Xu, J B

    2010-01-01

    Spin-coated alumina serving as a gate dielectric in thin film transistors shows interesting dielectric properties for low-voltage applications, despite a moderate capacitance. With Ga singly doped and Ga, Li co-doped ZnO as the active channel layers, typical mobilities of 4.7 cm 2 V -1 s -1 and 2.1 cm 2 V -1 s -1 are achieved, respectively. At a given gate bias, the operation current is much smaller than the previously reported values in low-voltage thin film transistors, primarily relying on the giant-capacitive dielectric. The reported devices combine advantages of high mobility, low power consumption, low cost and ease of fabrication. In addition to the transparent nature of both the dielectric and semiconducting active channels, the superior electrical properties of the devices may provide a new avenue for future transparent electronics. (fast track communication)

  16. Investigation of the dielectric recovery in synthetic air in a high voltage circuit breaker

    International Nuclear Information System (INIS)

    Seeger, M; Naidis, G; Steffens, A; Nordborg, H; Claessens, M

    2005-01-01

    The dielectric recovery of an axially blown arc in an experimental set-up based on a conventional HV circuit breaker was investigated both experimentally and theoretically. As a quenching gas, synthetic air was used. The investigated time range was from 10 μs to 10 ms after current zero (CZ). A fast rise in the dielectric strength during the first 100 μs, followed by a plateau and further rise later was observed. The dependences on the breaking current and pressure were determined. The measured dielectric recovery during the first 100 μs after CZ could be reproduced with good accuracy by computational fluid dynamics simulations. From that it could be deduced that the temperature decay in the axis does not depend sensitively on the pressure. The dielectric recovery during the first 100 μs scales therefore mainly with the filling pressure. The plateau in the breakdown characteristic is due to a hot vapour layer from the still evaporating PTFE nozzle surface

  17. High Radiation Tolerant Ceramic Voltage Isolator (Non-optical Gate Driver), Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The goal of the Phase I effort is to design, develop and demonstrate a novel solid-state ceramic-based voltage isolator and demonstrate its potential to provide a...

  18. Structural mechanism of voltage-dependent gating in an isolated voltage-sensing domain.

    Science.gov (United States)

    Li, Qufei; Wanderling, Sherry; Paduch, Marcin; Medovoy, David; Singharoy, Abhishek; McGreevy, Ryan; Villalba-Galea, Carlos A; Hulse, Raymond E; Roux, Benoît; Schulten, Klaus; Kossiakoff, Anthony; Perozo, Eduardo

    2014-03-01

    The transduction of transmembrane electric fields into protein motion has an essential role in the generation and propagation of cellular signals. Voltage-sensing domains (VSDs) carry out these functions through reorientations of positive charges in the S4 helix. Here, we determined crystal structures of the Ciona intestinalis VSD (Ci-VSD) in putatively active and resting conformations. S4 undergoes an ~5-Å displacement along its main axis, accompanied by an ~60° rotation. This movement is stabilized by an exchange in countercharge partners in helices S1 and S3 that generates an estimated net charge transfer of ~1 eo. Gating charges move relative to a ''hydrophobic gasket' that electrically divides intra- and extracellular compartments. EPR spectroscopy confirms the limited nature of S4 movement in a membrane environment. These results provide an explicit mechanism for voltage sensing and set the basis for electromechanical coupling in voltage-dependent enzymes and ion channels.

  19. Multiple current peaks in room-temperature atmospheric pressure homogenous dielectric barrier discharge plasma excited by high-voltage tunable nanosecond pulse in air

    Energy Technology Data Exchange (ETDEWEB)

    Yang, De-Zheng; Wang, Wen-Chun; Zhang, Shuai; Tang, Kai; Liu, Zhi-jie; Wang, Sen [Key Lab of Materials Modification, Dalian University of Technology, Ministry of Education, Dalian 116024 (China)

    2013-05-13

    Room temperature homogenous dielectric barrier discharge plasma with high instantaneous energy efficiency is acquired by using nanosecond pulse voltage with 20-200 ns tunable pulse width. Increasing the voltage pulse width can lead to the generation of regular and stable multiple current peaks in each discharge sequence. When the voltage pulse width is 200 ns, more than 5 organized current peaks can be observed under 26 kV peak voltage. Investigation also shows that the organized multiple current peaks only appear in homogenous discharge mode. When the discharge is filament mode, organized multiple current peaks are replaced by chaotic filament current peaks.

  20. A radiation-hardened 1K-bit dielectrically isolated random access memory

    International Nuclear Information System (INIS)

    Sandors, T.J.; Boarman, J.W.; Kasten, A.J.; Wood, G.M.

    1982-01-01

    Dielectric Isolation has been used for many years as the bipolar technology for latch-up free, radiation hardened integrated circuits in strategic systems. The state-of-the-art up to this point has been the manufacture of MSI functions containing a maximum of several hundred isolated components. This paper discusses a 1024 Bit Random Access Memory chip containing over 4000 dielectrically isolated components which has been designed for strategic radiation environments. The process utilized and the circuit design of the 1024 Bit RAM have been previously discussed. The techniques used are similar to those employed for the MX digital integrated circuits except for specific items required to make this a true LSI technology. These techniques, along with electrical and radiation data for the RAM, are presented

  1. Novel design of high voltage pulse source for efficient dielectric barrier discharge generation by using silicon diodes for alternating current

    Science.gov (United States)

    Truong, Hoa Thi; Hayashi, Misaki; Uesugi, Yoshihiko; Tanaka, Yasunori; Ishijima, Tatsuo

    2017-06-01

    This work focuses on design, construction, and optimization of configuration of a novel high voltage pulse power source for large-scale dielectric barrier discharge (DBD) generation. The pulses were generated by using the high-speed switching characteristic of an inexpensive device called silicon diodes for alternating current and the self-terminated characteristic of DBD. The operation started to be powered by a primary DC low voltage power supply flexibly equipped with a commercial DC power supply, or a battery, or DC output of an independent photovoltaic system without transformer employment. This flexible connection to different types of primary power supply could provide a promising solution for the application of DBD, especially in the area without power grid connection. The simple modular structure, non-control requirement, transformer elimination, and a minimum number of levels in voltage conversion could lead to a reduction in size, weight, simple maintenance, low cost of installation, and high scalability of a DBD generator. The performance of this pulse source has been validated by a load of resistor. A good agreement between theoretically estimated and experimentally measured responses has been achieved. The pulse source has also been successfully applied for an efficient DBD plasma generation.

  2. Unbalanced voltage control of virtual synchronous generator in isolated micro-grid

    Science.gov (United States)

    Cao, Y. Z.; Wang, H. N.; Chen, B.

    2017-06-01

    Virtual synchronous generator (VSG) control is recommended to stabilize the voltage and frequency in isolated micro-grid. However, common VSG control is challenged by widely used unbalance loads, and the linked unbalance voltage problem worsens the power quality of the micro-grid. In this paper, the mathematical model of VSG was presented. Based on the analysis of positive- and negative-sequence equivalent circuit of VSG, an approach was proposed to eliminate the negative-sequence voltage of VSG with unbalance loads. Delay cancellation method and PI controller were utilized to identify and suppress the negative-sequence voltages. Simulation results verify the feasibility of proposed control strategy.

  3. A high voltage gain quasi Z-source isolated DC/DC converter

    DEFF Research Database (Denmark)

    Siwakoti, Yam P.; Blaabjerg, Frede; Loh, Poh Chiang

    2014-01-01

    A compact quasi-Z-source DC/DC converter is presented with high voltage gain, isolated output, and improved efficiency. The improvements in size and performance were achieved by using a square wave inverter with only two output switches driving an isolating transformer in push-pull mode, followed...... by a voltage doubling output rectifier. The converter is well-suited to applications requiring a high voltage gain, especially renewable energy sources such as photovoltaic and fuel-cell power supplies. To demonstrate the converter's performance a prototype designed to output 400 V at 500 W was constructed...

  4. Preparation and Dielectric Properties of SiC/LSR Nanocomposites for Insulation of High Voltage Direct Current Cable Accessories.

    Science.gov (United States)

    Shang, Nanqiang; Chen, Qingguo; Wei, Xinzhe

    2018-03-08

    The conductivity mismatch in the composite insulation of high voltage direct current (HVDC) cable accessories causes electric field distribution distortion and even insulation breakdown. Therefore, a liquid silicone rubber (LSR) filled with SiC nanoparticles is prepared for the insulation of cable accessories. The micro-morphology of the SiC/LSR nanocomposites is observed by scanning electron microscopy, and their trap parameters are characterized using thermal stimulated current (TSC) tests. Moreover, the dielectric properties of SiC/LSR nanocomposites with different SiC concentrations are tested. The results show that the 3 wt % SiC/LSR sample has the best nonlinear conductivity, more than one order of magnitude higher than that of pure LSR with improved temperature and nonlinear conductivity coefficients. The relative permittivity increased 0.2 and dielectric loss factor increased 0.003, while its breakdown strength decreased 5 kV/mm compared to those of pure LSR. Moreover, the TSC results indicate the introduction of SiC nanoparticles reduced the trap level and trap density. Furthermore, the SiC nanoparticles filling significantly increased the sensitivity of LSR to electric field stress and temperature changes, enhancing the conductivity and electric field distribution within the HVDC cable accessories, thus improving the reliability of the HVDC cable accessories.

  5. Two-dimensional simulation of argon dielectric barrier discharge excited by a Gaussian voltage at atmospheric pressure

    Science.gov (United States)

    Xu, Yonggang; Wang, Jing; Li, Jing; Lei, Bingying; Tang, Jie; Wang, Yishan; Li, Yongfang; Zhao, Wei; Duan, Yixiang

    2017-04-01

    A two-dimensional self-consistent fluid model was employed to investigate the spatiotemporal characteristics of discharges in atmospheric pressure argon (Ar) dielectric barrier discharge driven by a Gaussian voltage. The simulation results show that a discharge with multiple current pulses occurs each half-cycle in the gas gap. A transition from the Townsend mode to the glow mode is observed with the increasing applied voltage each half-cycle at a lower driving frequency (7.5 kHz). It is also found that the glow mode survives all the discharge phases at a higher driving frequency (12.5 kHz and 40 kHz). The change in the discharge mode with the driving frequency mainly lies in the fact that a lot of charged particles created in the discharge gap have no enough time to drift and diffuse around, and then these particles are assembled in the discharge space at higher frequency. Additionally, the spatial distributions of the electron density indicate that a center-advantage discharge is ignited at the driving frequencies of interest, resulting in the radial non-uniformity of discharge because of the edge effects. However, this overall non-uniformity is weakened with the driving frequency increased to 40 kHz, at which concentric ring patterns are observed. These distinct behaviors are mainly attributed to the fact that many charged particles generated are trapped in the gas gap and then accumulated to make the extension along the radial direction due to the charged particles transport and diffusion, and that the effective overlapping of a large number of avalanches induced by the increased "seed" electron density with the driving frequency. Meanwhile, the surface charged particles accumulated on the dielectric barriers are also shown to play a role in the formation of the discharge structure.

  6. Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

    2015-08-24

    Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

  7. A High-Voltage Class D Audio Amplifier for Dielectric Elastomer Transducers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    Dielectric Elastomer (DE) transducers have emerged as a very interesting alternative to the traditional electrodynamic transducer. Lightweight, small size and high maneuverability are some of the key features of the DE transducer. An amplifier for the DE transducer suitable for audio applications...... is proposed and analyzed. The amplifier addresses the issue of a high impedance load, ensuring a linear response over the midrange region of the audio bandwidth (100 Hz – 3.5 kHz). THD+N below 0.1% are reported for the ± 300 V prototype amplifier producing a maximum of 125 Var at a peak efficiency of 95 %....

  8. RF capacitance-voltage characterization of MOSFETs with high-leakage dielectric

    NARCIS (Netherlands)

    Schmitz, Jurriaan; Cubaynes, F.N; Cubaynes, F.N.; Havens, R.J.; de Kort, R.; Scholten, A.J.; Tiemeijer, L.F.

    2003-01-01

    We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter

  9. Low voltage driven dielectric electro active polymer actuator with integrated piezoelectric transformer based driver

    DEFF Research Database (Denmark)

    Andersen, Thomas; Rødgaard, Martin Schøler; Thomsen, Ole Cornelius

    2011-01-01

    actuators, a low voltage solution is developed by integrating the driver electronic into a 110 mm tall cylindrical coreless Push InLastor actuator. To decrease the size of the driver, a piezoelectric transformer (PT) based solution is utilized. The PT is essentially an improved Rosen type PT...

  10. Ionization asymmetry effects on the properties modulation of atmospheric pressure dielectric barrier discharge sustained by tailored voltage waveforms

    Science.gov (United States)

    Zhang, Z. L.; Nie, Q. Y.; Zhang, X. N.; Wang, Z. B.; Kong, F. R.; Jiang, B. H.; Lim, J. W. M.

    2018-04-01

    The dielectric barrier discharge (DBD) is a promising technology to generate high density and uniform cold plasmas in atmospheric pressure gases. The effective independent tuning of key plasma parameters is quite important for both application-focused and fundamental studies. In this paper, based on a one-dimensional fluid model with semi-kinetics treatment, numerical studies of ionization asymmetry effects on the properties modulation of atmospheric DBD sustained by tailored voltage waveforms are reported. The driving voltage waveform is characterized by an asymmetric-slope fundamental sinusoidal radio frequency signal superimposing one or more harmonics, and the effects of the number of harmonics, phase shift, as well as the fluctuation of harmonics on the sheath dynamics, impact ionization of electrons and key plasma parameters are investigated. The results have shown that the electron density can exhibit a substantial increase due to the effective electron heating by a spatially asymmetric sheath structure. The strategic modulation of harmonics number and phase shift is capable of raising the electron density significantly (e.g., nearly three times in this case), but without a significant increase in the gas temperature. Moreover, by tailoring the fluctuation of harmonics with a steeper slope, a more profound efficiency in electron impact ionization can be achieved, and thus enhancing the electron density effectively. This method then enables a novel alternative approach to realize the independent control of the key plasma parameters under atmospheric pressure.

  11. Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments

    Science.gov (United States)

    Lükens, G.; Yacoub, H.; Kalisch, H.; Vescan, A.

    2016-05-01

    The interface charge density between the gate dielectric and an AlGaN/GaN heterostructure has a significant impact on the absolute value and stability of the threshold voltage Vth of metal-insulator-semiconductor (MIS) heterostructure field effect transistor. It is shown that a dry-etching step (as typically necessary for normally off devices engineered by gate-recessing) before the Al2O3 gate dielectric deposition introduces a high positive interface charge density. Its origin is most likely donor-type trap states shifting Vth to large negative values, which is detrimental for normally off devices. We investigate the influence of oxygen plasma annealing techniques of the dry-etched AlGaN/GaN surface by capacitance-voltage measurements and demonstrate that the positive interface charge density can be effectively compensated. Furthermore, only a low Vth hysteresis is observable making this approach suitable for threshold voltage engineering. Analysis of the electrostatics in the investigated MIS structures reveals that the maximum Vth shift to positive voltages achievable is fundamentally limited by the onset of accumulation of holes at the dielectric/barrier interface. In the case of the Al2O3/Al0.26Ga0.74N/GaN material system, this maximum threshold voltage shift is limited to 2.3 V.

  12. Isolated data acquisition system for high voltage applications

    International Nuclear Information System (INIS)

    Waitz, A.; Donaldson, A.

    1985-06-01

    This report describes the design and operation of a microcomputer controlled system for acquisition of both analog and binary data within the high voltage stages of a linac modulator. The system is comprised of a microprocessor Controller which communicates with the remote data Acquisition circuits via an optical bus. The bus, which uses a 1 MHz Manchester II format, is configured as a loop, starting at the Controller, daisy-chaining the remote cards and terminating back at the Controller. Upon receiving a linac timing pulse, the Controller sends addressed commands to the individual remote cards and receives data back. It then passes this data to the linac control system through a Multibus connection. Each remote circuit can return 16 binary sense and 7 (12 bit) analog parameters within 270 us. This speed is possible because of a pipelined design where one word is transmitted while another is being converted. A data conversion cycle is initiated when a remote data acquisition card receives the proper command and address from the controller

  13. Electrospraying and ultraviolet light curing of nanometer-thin polydimethylsiloxane membranes for low-voltage dielectric elastomer transducers

    Science.gov (United States)

    Osmani, Bekim; Töpper, Tino; Siketanc, Matej; Kovacs, Gabor M.; Müller, Bert

    2017-04-01

    Dielectric elastomer transducers (DETs) have attracted interest as actuators, sensors, and even as self-sensing actuators for applications in medicine, soft robotics, and microfluidics. To reach strains of more than 10 %, they currently require operating voltages of several hundred volts. In medical applications for artificial muscles, however, their operation is limited to a very few tens of volts, which implies high permittivity materials and thin-film structures. Such micro- or nanostructures can be prepared using electro-spraying, a cost-effective technique that allows upscaling using multiple nozzles for the fabrication of silicone films down to nanometer thickness. Deposition rates of several micrometers per hour have already been reached. It has been recently demonstrated that such membranes can be fabricated by electro-spraying and subsequent ultraviolet light irradiation. Herein, we introduce a relatively fast deposition of a dimethyl silicone copolymer fluid that contains mercaptopropyl side chains in addition to the methyl groups. Its elastic modulus was tuned with the irradiation dose of the 200 W Hg-Xe lamp. We also investigated the formation of elastomer films, using polymer concentrations in ethyl acetate of 1, 2, 5 and 10 vol%. After curing, the surface roughness was measured by means of atomic force microscopy. This instrument also enabled us to determine the average elastic modulus out of, for example, 400 nanoindentation measurements, using a spherical tip with a radius of 500 nm. The elastomer films were cured for a period of less than one minute, a speed that makes it feasible to combine electro-spraying and in situ curing in a single process step for fabricating low-voltage, multilayer DETs.

  14. Low operating voltage InGaZnO thin-film transistors based on Al2O3 high-k dielectrics fabricated using pulsed laser deposition

    International Nuclear Information System (INIS)

    Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K.; Lee, W. J.; Shin, B. C.; Cho, C. R.

    2014-01-01

    Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al 2 O 3 dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al 2 O 3 and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al 2 O 3 gate dielectric exhibits a very low leakage current density of 1.3 x 10 -8 A/cm 2 at 5 V and a high capacitance density of 60.9 nF/cm 2 . The IGZO TFT with a structure of Ni/IGZO/Al 2 O 3 /Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm 2 V -1 s -1 , an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10 7 .

  15. Low-voltage organic thin film transistors (OTFTs) using crosslinked polyvinyl alcohol (PVA)/neodymium oxide (Nd2O3) bilayer gate dielectrics

    Science.gov (United States)

    Khound, Sagarika; Sarma, Ranjit

    2018-01-01

    We have reported here on the design, processing and dielectric properties of pentacene-based organic thin film transitors (OTFTs) with a bilayer gate dilectrics of crosslinked PVA/Nd2O3 which enables low-voltage organic thin film operations. The dielectric characteristics of PVA/Nd2O3 bilayer films are studied by capacitance-voltage ( C- V) and current-voltage ( I- V) curves in the metal-insulator-metal (MIM) structure. We have analysed the output electrical responses and transfer characteristics of the OTFT devices to determine their performance of OTFT parameters. The mobility of 0.94 cm2/Vs, the threshold voltage of - 2.8 V, the current on-off ratio of 6.2 × 105, the subthreshold slope of 0.61 V/decade are evaluated. Low leakage current of the device is observed from current density-electric field ( J- E) curve. The structure and the morphology of the device are studied using X-ray diffraction (XRD) and atomic force microscope (AFM), respectively. The study demonstrates an effective way to realize low-voltage, high-performance OTFTs at low cost.

  16. A tubular dielectric elastomer actuator: Fabrication, characterization and active vibration isolation

    DEFF Research Database (Denmark)

    Sarban, R.; Jones, R. W.; Mace, B. R.

    2011-01-01

    This contribution reviews the fabrication, characterization and active vibration isolation performance of a core-free rolled tubular dielectric elastomer (DE) actuator, which has been designed and developed by Danfoss PolyPower A/S. PolyPower DE material, PolyPower (TM), is produced in thin sheets...... of 80 mu m thickness with corrugated metallic electrodes on both sides. Tubular actuators are manufactured by rolling the DE sheets in a cylindrical shape. The electromechanical characteristics of such actuators are modeled based on equilibrium pressure equation. The model is validated with experimental...... the dominant dynamic characteristics of the core-free tubular actuator. It has been observed that all actuators have similar dynamic characteristics in a frequency range up to 1 kHz. A tubular actuator is then used to provide active vibration isolation (AVI) of a 250 g mass subject to shaker generated 'ground...

  17. Voltage control of a variable speed wind turbine connected to an isolated load: Experimental study

    International Nuclear Information System (INIS)

    Masmoudi, Abdelkarim; Krichen, Lotfi; Ouali, Abderrazak

    2012-01-01

    Highlights: ► We develop an experimental test bench of a wind energy conversion system. ► A DC motor is emulating a variable speed wind turbine using a DS1104 card. ► The production unit is supplying a three-phase load. ► A voltage control is established in order to regulate the DC bus voltage and the line-to-line voltages. - Abstract: This study is interested in the development of an experimental test bench of an autonomous wind energy conversion system (WECS) based on a permanent magnet synchronous generator (PMSG). After the description of the test bench, the elements constituting the WECS are presented. Then, a real time model implemented under a digital signal processor (DSP) system is established. The first objective of this work is to validate the functionality of the test bench leading to experiment some principles developed in theory. The second objective is to control the load connection voltages and the DC bus voltage. For the first control, two resonant controllers are used and for the second one, a dump load, connected to the DC bus, offers the possibility to maintain a balance between production and consumption in spite of wind fluctuations and load variations. The experimental results show the effectiveness of the test bench trying out in real time the behavior of a WECS supplying an isolated load.

  18. Determination of optimum shape and dimensions of anode high-voltage isolators for gaseous proportional counters

    International Nuclear Information System (INIS)

    Jelen, K.; Jagusztyn, W.

    1975-01-01

    The influence of the shape and dimensions of the high-voltage anode-to-cathods isolator on the regularity of the electrostatic field distribution along the anode of a cylindrical gaseous proportional counter is studied. For a counter of fixed dimensions, the length and diameter of the glass isolators were optimized to disrupt as little as possible the regularity of the field distribution in the active volume of the counter. Results of calculations are in agreement with experimental data. The obtained results provide a basis for obtaining a correct ratio of the active volume of the counter to its total volume. (author)

  19. Process optimization of a deep trench isolation structure for high voltage SOI devices

    International Nuclear Information System (INIS)

    Zhu Kuiying; Qian Qinsong; Zhu Jing; Sun Weifeng

    2010-01-01

    The process reasons for weak point formation of the deep trench on SOI wafers have been analyzed in detail. An optimized trench process is also proposed. It is found that there are two main reasons: one is over-etching laterally of the silicon on the surface of the buried oxide caused by a fringe effect; and the other is the slow growth rate of the isolation oxide in the concave silicon corner of the trench bottom. In order to improve the isolation performance of the deep trench, two feasible ways for optimizing the trench process are proposed. The improved process thickens the isolation oxide and rounds sharp silicon corners at their weak points, increasing the applied voltage by 15-20 V at the same leakage current. The proposed new trench isolation process has been verified in the foundry's 0.5-μm HV SOI technology. (semiconductor devices)

  20. An isolated bridgeless AC-DC PFC converter using a LC resonant voltage doubler rectifier

    Science.gov (United States)

    Lee, Sin-woo; Do, Hyun-Lark

    2016-12-01

    This paper proposed an isolated bridgeless AC-DC power factor correction (PFC) converter using a LC resonant voltage doubler rectifier. The proposed converter is based on isolated conventional single-ended primary inductance converter (SEPIC) PFC converter. The conduction loss of rectification is reduced than a conventional one because the proposed converter is designed to eliminate a full-bridge rectifier at an input stage. Moreover, for zero-current switching (ZCS) operation and low voltage stresses of output diodes, the secondary of the proposed converter is designed as voltage doubler with a LC resonant tank. Additionally, an input-output electrical isolation is provided for safety standard. In conclusion, high power factor is achieved and efficiency is improved. The operational principles, steady-state analysis and design equations of the proposed converter are described in detail. Experimental results from a 60 W prototype at a constant switching frequency 100 kHz are presented to verify the performance of the proposed converter.

  1. Influence of 60Co γ-ray irradiation and applied bias voltages on dielectric properties of Al/SiO2/p-Si (MIS) structures

    International Nuclear Information System (INIS)

    Tascioglu, I.; Uslu, H.; Aydemir, U.

    2010-01-01

    The MIS structures were exposed to 6 0Co γ-ray source at 5 kGy and radiation effect on dielectric properties has been investigated using admittance method (C-V and G/ω-V) by applying a small ac signal of 40 mV amplitude at 1 MHz and room temperature. The voltage dependent dielectric constant (ε'), dielectric loss (ε''), loss tangent (tanδ), electric modulus(M*) and ac electrical conductivity (σ a c) profiles show an intersection behavior about 1.6 V. The ε', ε'', tanδ and σ a c values decrease with increasing dose before intersection point after than they become increase. Such behavior can be explained on the basis of Maxwell-Wagner interfacial polarization and restructuring and reordering of interface states charges due to the effect of γ-ray irradiation. Also, the imaginer part of M* exhibits a peak. It is concluded that all these parameters of MIS structure are strongly dependent on the radiation dose and applied bias voltage especially in depletion region.

  2. High voltage switches having one or more floating conductor layers

    Science.gov (United States)

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  3. Ozone and dinitrogen monoxide production in atmospheric pressure air dielectric barrier discharge plasma effluent generated by nanosecond pulse superimposed alternating current voltage

    Science.gov (United States)

    Takashima, Keisuke; Kaneko, Toshiro

    2017-06-01

    The effects of nanosecond pulse superposition to alternating current voltage (NS + AC) on the generation of an air dielectric barrier discharge (DBD) plasma and reactive species are experimentally studied, along with measurements of ozone (O3) and dinitrogen monoxide (N2O) in the exhausted gas through the air DBD plasma (air plasma effluent). The charge-voltage cycle measurement indicates that the role of nanosecond pulse superposition is to induce electrical charge transport and excess charge accumulation on the dielectric surface following the nanosecond pulses. The densities of O3 and N2O in NS + AC DBD are found to be significantly increased in the plasma effluent, compared to the sum of those densities generated in NS DBD and AC DBD operated individually. The production of O3 and N2O is modulated significantly by the phase in which the nanosecond pulse is superimposed. The density increase and modulation effects by the nanosecond pulse are found to correspond with the electrical charge transport and the excess electrical charge accumulation induced by the nanosecond pulse. It is suggested that the electrical charge transport by the nanosecond pulse might result in the enhancement of the nanosecond pulse current, which may lead to more efficient molecular dissociation, and the excess electrical charge accumulation induced by the nanosecond pulse increases the discharge coupling power which would enhance molecular dissociation.

  4. Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors.

    Science.gov (United States)

    Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

    2015-12-14

    Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10(-10) S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

  5. Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors

    Science.gov (United States)

    Wang, Chao; Lee, Wen-Ya; Kong, Desheng; Pfattner, Raphael; Schweicher, Guillaume; Nakajima, Reina; Lu, Chien; Mei, Jianguo; Lee, Tae Hoon; Wu, Hung-Chin; Lopez, Jeffery; Diao, Ying; Gu, Xiaodan; Himmelberger, Scott; Niu, Weijun; Matthews, James R.; He, Mingqian; Salleo, Alberto; Nishi, Yoshio; Bao, Zhenan

    2015-01-01

    Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10–10 S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water. PMID:26658331

  6. Performance and scalability of isolated DC-DC converter topologies in low voltage, high current applications

    Energy Technology Data Exchange (ETDEWEB)

    Vaisanen, V.

    2012-07-01

    Fuel cells are a promising alternative for clean and efficient energy production. A fuel cell is probably the most demanding of all distributed generation power sources. It resembles a solar cell in many ways, but sets strict limits to current ripple, common mode voltages and load variations. The typically low output voltage from the fuel cell stack needs to be boosted to a higher voltage level for grid interfacing. Due to the high electrical efficiency of the fuel cell, there is a need for high efficiency power converters, and in the case of low voltage, high current and galvanic isolation, the implementation of such converters is not a trivial task. This thesis presents galvanically isolated DC-DC converter topologies that have favorable characteristics for fuel cell usage and reviews the topologies from the viewpoint of electrical efficiency and cost efficiency. The focus is on evaluating the design issues when considering a single converter module having large current stresses. The dominating loss mechanism in low voltage, high current applications is conduction losses. In the case of MOSFETs, the conduction losses can be efficiently reduced by paralleling, but in the case of diodes, the effectiveness of paralleling depends strongly on the semiconductor material, diode parameters and output configuration. The transformer winding losses can be a major source of losses if the windings are not optimized according to the topology and the operating conditions. Transformer prototyping can be expensive and time consuming, and thus it is preferable to utilize various calculation methods during the design process in order to evaluate the performance of the transformer. This thesis reviews calculation methods for solid wire, litz wire and copper foil winding losses, and in order to evaluate the applicability of the methods, the calculations are compared against measurements and FEM simulations. By selecting a proper calculation method for each winding type, the winding

  7. State Recognition of High Voltage Isolation Switch Based on Background Difference and Iterative Search

    Science.gov (United States)

    Xu, Jiayuan; Yu, Chengtao; Bo, Bin; Xue, Yu; Xu, Changfu; Chaminda, P. R. Dushantha; Hu, Chengbo; Peng, Kai

    2018-03-01

    The automatic recognition of the high voltage isolation switch by remote video monitoring is an effective means to ensure the safety of the personnel and the equipment. The existing methods mainly include two ways: improving monitoring accuracy and adopting target detection technology through equipment transformation. Such a method is often applied to specific scenarios, with limited application scope and high cost. To solve this problem, a high voltage isolation switch state recognition method based on background difference and iterative search is proposed in this paper. The initial position of the switch is detected in real time through the background difference method. When the switch starts to open and close, the target tracking algorithm is used to track the motion trajectory of the switch. The opening and closing state of the switch is determined according to the angle variation of the switch tracking point and the center line. The effectiveness of the method is verified by experiments on different switched video frames of switching states. Compared with the traditional methods, this method is more robust and effective.

  8. Active and passive vibration isolation in piezoelectric phononic rods with external voltage excitation

    Directory of Open Access Journals (Sweden)

    Qicheng Zhang

    2017-05-01

    Full Text Available Active piezoelectric materials are applied to one-dimensional phononic crystals, for the control of longitudinal vibration propagation both in active and passive modes. Based on the electromechanical coupling between the acoustical vibration and electric field, the electromechanical equivalent method is taken to theoretically predict the transmission spectrum of the longitudinal vibration. It is shown that the phononic rod can suppress the vibration efficiently at the frequencies of interest, by actively optimizing the motions of piezoelectric elements. In an illustrated phononic rod of 11.2cm long, active tunable isolations of more than 20dB at low frequencies (500Hz-14kHz are generated by controlling the excitation voltages of piezoelectric elements. Meanwhile, passive fixed isolation at high frequencies (14k-63kHz are presented by its periodicity characteristics. Finite element simulations and vibration experiments on the rod demonstrate the effectiveness of the approach in terms of its vibration isolation capabilities and tunable characteristics. This phononic rod can be manufactured easily and provides numerous potential applications in designing isolation mounts and platforms.

  9. A high voltage DC-DC converter driving a Dielectric Electro Active Polymer actuator for wind turbine flaps

    DEFF Research Database (Denmark)

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.

    2012-01-01

    The Dielectric Electro Active Polymer (DEAP) material is a very thin (~80 μm) silicone elastomer film with a compliant metallic electrode layer on both sides. The DEAP is fundamentally a capacitor that is capable of very high strain. The property that the polymer changes its shape, as a result...

  10. Enhanced dielectric-wall linear accelerator

    Science.gov (United States)

    Sampayan, Stephen E.; Caporaso, George J.; Kirbie, Hugh C.

    1998-01-01

    A dielectric-wall linear accelerator is enhanced by a high-voltage, fast e-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  11. Multiple-Time-Scales Hierarchical Frequency Stability Control Strategy of Medium-Voltage Isolated Microgrid

    DEFF Research Database (Denmark)

    Zhao, Zhuoli; Yang, Ping; Guerrero, Josep M.

    2016-01-01

    In this paper, an islanded medium-voltage (MV) microgrid placed in Dongao Island is presented, which integrates renewable-energy-based distributed generations (DGs), energy storage system (ESS), and local loads. In an isolated microgrid without connection to the main grid to support the frequency......, it is more complex to control and manage. Thus in order to maintain the frequency stability in multiple-time-scales, a hierarchical control strategy is proposed. The proposed control architecture divides the system frequency in three zones: (A) stable zone, (B) precautionary zone and (C) emergency zone...... of Zone B. Theoretical analysis, time-domain simulation and field test results under various conditions and scenarios in the Dongao Island microgrid are presented to prove the validity of the introduced control strategy....

  12. Plasma density enhancement in atmospheric-pressure dielectric-barrier discharges by high-voltage nanosecond pulse in the pulse-on period: a PIC simulation

    International Nuclear Information System (INIS)

    Sang Chaofeng; Sun Jizhong; Wang Dezhen

    2010-01-01

    A particle-in-cell (PIC) plus Monte Carlo collision simulation is employed to investigate how a sustainable atmospheric pressure single dielectric-barrier discharge responds to a high-voltage nanosecond pulse (HVNP) further applied to the metal electrode. The results show that the HVNP can significantly increase the plasma density in the pulse-on period. The ion-induced secondary electrons can give rise to avalanche ionization in the positive sheath, which widens the discharge region and enhances the plasma density drastically. However, the plasma density stops increasing as the applied pulse lasts over certain time; therefore, lengthening the pulse duration alone cannot improve the discharge efficiency further. Physical reasons for these phenomena are then discussed.

  13. Plasma density enhancement in atmospheric-pressure dielectric-barrier discharges by high-voltage nanosecond pulse in the pulse-on period: a PIC simulation

    Science.gov (United States)

    Sang, Chaofeng; Sun, Jizhong; Wang, Dezhen

    2010-02-01

    A particle-in-cell (PIC) plus Monte Carlo collision simulation is employed to investigate how a sustainable atmospheric pressure single dielectric-barrier discharge responds to a high-voltage nanosecond pulse (HVNP) further applied to the metal electrode. The results show that the HVNP can significantly increase the plasma density in the pulse-on period. The ion-induced secondary electrons can give rise to avalanche ionization in the positive sheath, which widens the discharge region and enhances the plasma density drastically. However, the plasma density stops increasing as the applied pulse lasts over certain time; therefore, lengthening the pulse duration alone cannot improve the discharge efficiency further. Physical reasons for these phenomena are then discussed.

  14. Frequency and voltage dependence dielectric properties, ac electrical conductivity and electric modulus profiles in Al/Co{sub 3}O{sub 4}-PVA/p-Si structures

    Energy Technology Data Exchange (ETDEWEB)

    Bilkan, Çiğdem, E-mail: cigdembilkan@gmail.com [Department of Physics, Faculty of Sciences, The University of Çankırı Karatekin, 18100 Çankırı (Turkey); Azizian-Kalandaragh, Yashar [Department of Physics, Faculty of Science, The University of Mohaghegh Ardabili, Ardabil (Iran, Islamic Republic of); Altındal, Şemsettin [Department of Physics, Faculty of Sciences, The University of Gazi, 06500 Ankara (Turkey); Shokrani-Havigh, Roya [Department of Physics, Faculty of Science, The University of Mohaghegh Ardabili, Ardabil (Iran, Islamic Republic of)

    2016-11-01

    In this research a simple microwave-assisted method have been used for preparation of cobalt oxide nanostructures. The as-prepared sample has been investigated by UV–vis spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM). On the other hand, frequency and voltage dependence of both the real and imaginary parts of dielectric constants (ε′, ε″) and electric modulus (M′ and M″), loss tangent (tanδ), and ac electrical conductivity (σ{sub ac}) values of Al/Co{sub 3}O{sub 4}-PVA/p-Si structures were obtained in the wide range of frequency and voltage using capacitance (C) and conductance (G/ω) data at room temperature. The values of ε′, ε″ and tanδ were found to decrease with increasing frequency almost for each applied bias voltage, but the changes in these parameters become more effective in the depletion region at low frequencies due to the charges at surface states and their relaxation time and polarization effect. While the value of σ is almost constant at low frequency, increases almost as exponentially at high frequency which are corresponding to σ{sub dc} and σ{sub ac}, respectively. The M′ and M″ have low values at low frequencies region and then an increase with frequency due to short-range mobility of charge carriers. While the value of M′ increase with increasing frequency, the value of M″ shows two peak and the peaks positions shifts to higher frequency with increasing applied voltage due to the decrease of the polarization and N{sub ss} effects with increasing frequency.

  15. Frequency and voltage dependent profile of dielectric properties, electric modulus and ac electrical conductivity in the PrBaCoO nanofiber capacitors

    Directory of Open Access Journals (Sweden)

    S. Demirezen

    Full Text Available In this study, praseodymium barium cobalt oxide nanofiber interfacial layer was sandwiched between Au and n-Si. Frequency and voltage dependence of ε′, ε′, tanδ, electric modulus (M′ and M″ and σac of PrBaCoO nanofiber capacitor have been investigated by using impedance spectroscopy method. The obtained experimental results show that the values of ε′, ε′, tanδ, M′, M″ and σac of the PrBaCoO nanofiber capacitor are strongly dependent on frequency of applied bias voltage. The values of ε′, ε″ and tanδ show a steep decrease with increasing frequency for each forward bias voltage, whereas the values of σac and the electric modulus increase with increasing frequency. The high dispersion in ε′ and ε″ values at low frequencies may be attributed to the Maxwell–Wagner and space charge polarization. The high values of ε′ may be due to the interfacial effects within the material, PrBaCoO nanofibers interfacial layer and electron effect. The values of M′ and M″ reach a maximum constant value corresponding to M∞ ≈ 1/ε∞ due to the relaxation process at high frequencies, but both the values of M′ and M″ approach almost to zero at low frequencies. The changes in the dielectric and electrical properties with frequency can be also attributed to the existence of Nss and Rs of the capacitors. As a result, the change in the ε′, ε″, tanδ, M′, M″ and ac electric conductivity (σac is a result of restructuring and reordering of charges at the PrBaCoO/n-Si interface under an external electric field or voltage and interface polarization. Keywords: Thin films, Electrical properties, Interface/interphase

  16. Recycling ``in situ`` of dielectric oil of electric transformer of medium and high voltage; Reciclaje ``in situ`` y ``en carga`` del aceite dielectrico de los transformadores electricos de media y alta tension

    Energy Technology Data Exchange (ETDEWEB)

    Solis, A.

    1997-06-01

    The author describes the process followed by the company to control the quality of every type of oil from electric transformer of medium and high voltage polluted because of its use. The pollutants contained in the dielectric liquid are eliminated or minimize through the following treatments: conditioning-reconditioning-regeneration. (Author) 6 refs.

  17. Radiation effects on the current-voltage and capacitance-voltage characteristics of advanced p-n junction diodes surrounded by shallow trench isolation

    International Nuclear Information System (INIS)

    Poyai, A.; Simoen, E.; Claeys, C.; Hayama, K.; Kobayashi, K.; Ohyama, H.

    2002-01-01

    This paper investigates the impact of 20 MeV proton irradiation on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of different geometry n + -p-well junction diodes surrounded by shallow trench isolation and processed in a 0.18 μm CMOS technology. From I-V characteristics, a higher current damage coefficient was found for the bulk than for the peripheral component. The radiation-induced boron de-activation resulted in a lowering of the p-well doping, which has been derived from high-frequency C-V measurements. This was confirmed by deep level transient spectroscopy (DLTS) analysis, revealing the presence of interstitial boron related radiation defects. As will be demonstrated for the bulk leakage-current damage coefficient, the electric field enhanced generation rate of charge carriers and the radiation-induced boron de-activation should be accounted for properly

  18. A New Approach to High Efficincy in Isolated Boost Converters for High-Power Low-Voltage Fuel Cell Apllications

    DEFF Research Database (Denmark)

    Nymand, Morten; Andersen, Michael A. E.

    2008-01-01

    A new low-leakage-inductance low-resistance design approach to low-voltage high-power isolated boost converters is presented. Very low levels of parasitic circuit inductances are achieved by optimizing transformer design and circuit lay-out. Primary side voltage clamp circuits can be eliminated...... by the use of power MOSFETs fully rated for repetitive avalanche. Voltage rating of primary switches can now be reduced, significantly reducing switch on-state losses. Finally, silicon carbide rectifying diodes allow fast diode turn-off, further reducing losses. Test results from a 1.5 kW full-bridge boost...... converter verify theoretical analysis and demonstrate very high efficiency. Worst case efficiency, at minimum input voltage maximum power, is 96.8 percent and maximum efficiency reaches 98 percent....

  19. New non-linear control strategy for non-isolated DC/DC converter with high voltage ratio

    International Nuclear Information System (INIS)

    Shahin, A.; Huang, B.; Martin, J.P.; Pierfederici, S.; Davat, B.

    2010-01-01

    In this paper, a non-isolated DC/DC converter with high voltage ratio is proposed to allow the interface between a low voltage power source like fuel cell and a high voltage DC bus. To take into account the low voltage-high density characteristics of power sources, a cascaded structure composed of two sub-converters has been chosen and allows obtaining a high voltage ratio. The choice of each sub-converter is based on the requirements of the source and its performances. Consequently, we have chosen a three-interleaved boost converter as the 1st sub-converter whereas the 2nd sub-converter is a three-level boost converter. The control of the whole system is realized thanks to energetic trajectories planning based on flatness properties of the system. The control of both the current and the balance of voltage across the output serial capacitors of the three-level boost converter is ensured by non-linear controllers based on a new non-linear model. Experimental results allow validating the proposed power architecture and its associated control.

  20. New non-linear control strategy for non-isolated DC/DC converter with high voltage ratio

    Energy Technology Data Exchange (ETDEWEB)

    Shahin, A.; Huang, B.; Martin, J.P.; Pierfederici, S.; Davat, B. [Groupe de Recherche en Electronique et en Electrotechnique de Nancy - INPL - Nancy Universite, 2, Avenue de la Foret de Haye, 54516 Vandoeuvre-les-Nancy Cedex (France)

    2010-01-15

    In this paper, a non-isolated DC/DC converter with high voltage ratio is proposed to allow the interface between a low voltage power source like fuel cell and a high voltage DC bus. To take into account the low voltage-high density characteristics of power sources, a cascaded structure composed of two sub-converters has been chosen and allows obtaining a high voltage ratio. The choice of each sub-converter is based on the requirements of the source and its performances. Consequently, we have chosen a three-interleaved boost converter as the 1st sub-converter whereas the 2nd sub-converter is a three-level boost converter. The control of the whole system is realized thanks to energetic trajectories planning based on flatness properties of the system. The control of both the current and the balance of voltage across the output serial capacitors of the three-level boost converter is ensured by non-linear controllers based on a new non-linear model. Experimental results allow validating the proposed power architecture and its associated control. (author)

  1. Neural network-based voltage regulator for an isolated asynchronous generator supplying three-phase four-wire loads

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Bhim; Kasal, Gaurav Kumar [Department of Electrical Engineering, Indian Institute of Technology, Delhi, Hauz-Khas, New Delhi 110016 (India)

    2008-06-15

    This paper deals with a neural network-based solid state voltage controller for an isolated asynchronous generator (IAG) driven by constant speed prime mover like diesel engine, bio-gas or gasoline engine and supplying three-phase four-wire loads. The proposed control scheme uses an indirect current control and a fast adaptive linear element (adaline) based neural network reference current extractor, which extracts the real positive sequence current component without any phase shift. The neutral current of the source is also compensated by using three single-phase bridge configuration of IGBT (insulated gate bipolar junction transistor) based voltage source converter (VSC) along-with single-phase transformer having self-supported dc bus. The proposed controller provides the functions as a voltage regulator, a harmonic eliminator, a neutral current compensator, and a load balancer. The proposed isolated electrical system with its controller is modeled and simulated in MATLAB along with Simulink and PSB (Power System Block set) toolboxes. The simulated results are presented to demonstrate the capability of an isolated asynchronous generating system driven by a constant speed prime mover for feeding three-phase four-wire loads. (author)

  2. NMR structural and dynamical investigation of the isolated voltage-sensing domain of the potassium channel KvAP: implications for voltage gating.

    Science.gov (United States)

    Shenkarev, Zakhar O; Paramonov, Alexander S; Lyukmanova, Ekaterina N; Shingarova, Lyudmila N; Yakimov, Sergei A; Dubinnyi, Maxim A; Chupin, Vladimir V; Kirpichnikov, Mikhail P; Blommers, Marcel J J; Arseniev, Alexander S

    2010-04-28

    The structure and dynamics of the isolated voltage-sensing domain (VSD) of the archaeal potassium channel KvAP was studied by high-resolution NMR. The almost complete backbone resonance assignment and partial side-chain assignment of the (2)H,(13)C,(15)N-labeled VSD were obtained for the protein domain solubilized in DPC/LDAO (2:1) mixed micelles. Secondary and tertiary structures of the VSD were characterized using secondary chemical shifts and NOE contacts. These data indicate that the spatial structure of the VSD solubilized in micelles corresponds to the structure of the domain in an open state of the channel. NOE contacts and secondary chemical shifts of amide protons indicate the presence of tightly bound water molecule as well as hydrogen bond formation involving an interhelical salt bridge (Asp62-R133) that stabilizes the overall structure of the domain. The backbone dynamics of the VSD was studied using (15)N relaxation measurements. The loop regions S1-S2 and S2-S3 were found mobile, while the S3-S4 loop (voltage-sensor paddle) was found stable at the ps-ns time scale. The moieties of S1, S2, S3, and S4 helices sharing interhelical contacts (at the level of the Asp62-R133 salt bridge) were observed in conformational exchange on the micros-ms time scale. Similar exchange-induced broadening of characteristic resonances was observed for the VSD solubilized in the membrane of lipid-protein nanodiscs composed of DMPC, DMPG, and POPC/DOPG lipids. Apparently, the observed interhelical motions represent an inherent property of the VSD of the KvAP channel and can play an important role in the voltage gating.

  3. Isolated PWM DC-AC SICAM with an active capacitive voltage clamp[Pulse Density Modulated; Pulse Width Modulation

    Energy Technology Data Exchange (ETDEWEB)

    Ljusev, P.

    2004-03-15

    In this report an isolated PWM DC-AC SICAM with an active capacitive voltage clamp is presented. AC-DC power supply is implemented in its simplest form: diode rectifier followed by a medium-size charge-storage capacitors and possibly with an EMC filter on the mains entrance. Isolation from the AC mains is achieved using a high frequency (HF) transformer, whose voltages are not audio-modulated. The latter simplifies the design and is expected to have many advantages over the approach where the transformer voltages are modulated in regards to the audio signal reference. Input stage is built as a DC-AC inverter (push-pull, half-bridge or a full-bridge) and operated with 50% duty cycle, with all the challenges to avoid transformer saturation and obtain symmetrical operation. On the secondary side the output section is implemented as rectifier+inverter AC-AC stage, i.e. a true bidirectional bridge, which operation is aimed towards amplification of the audio signal. In order to solve the problem with the commutation of the load current, a dead time between the incoming and outgoing bidirectional switch is implemented, while a capacitive voltage clamp is used to keep the induced overvoltage to reasonable levels. The energy stored in the clamping capacitor is not wasted as in the dissipative clamps, but is rather transferred back to the primary side for further processing using an auxiliary isolated single-switch converter, i.e. an active clamping technique is used. (au)

  4. High-Performance Harmonic Isolation and Load Voltage Regulation of the Three-Phase Series Active Filter Utilizing the Waveform Reconstruction Method

    DEFF Research Database (Denmark)

    Senturk, Osman Selcuk; Hava, Ahmet M.

    2009-01-01

    . The SAF-compensated system utilizing WRM provides highperformance load harmonic voltage isolation and load voltage regulation at steady-state and during transients compared to the system utilizing the synchronous reference-frame-based signal decomposition. In addition, reducing the line current sampling...

  5. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11 000 cm2/V·s

    KAUST Repository

    Smith, Casey

    2013-07-23

    Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11 000 cm 2/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low t ox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance. © 2013 American Chemical Society.

  6. Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11 000 cm2/V·s

    KAUST Repository

    Smith, Casey; Qaisi, Ramy M.; Liu, Zhihong; Yu, Qingkai; Hussain, Muhammad Mustafa

    2013-01-01

    Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11 000 cm 2/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low t ox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance. © 2013 American Chemical Society.

  7. Relaxation of Isolated Ventricular Cardiomyocytes by a Voltage-Dependent Process

    Science.gov (United States)

    Bridge, John H. B.; Spitzer, Kenneth W.; Ershler, Philip R.

    1988-08-01

    Cell contraction and relaxation were measured in single voltage-clamped guinea pig cardiomyocytes to investigate the contribution of sarcolemmal Na+-Ca2+ exchange to mechanical relaxation. Cells clamped from -80 to 0 millivolts displayed initial phasic and subsequent tonic contractions; caffeine reduced or abolished the phasic and enlarged the tonic contraction. The rate of relaxation from tonic contractions was steeply voltage-dependent and was significantly slowed in the absence of a sarcolemmal Na+ gradient. Tonic contractions elicited in the absence of a Na+ gradient promptly relaxed when external Na+ was applied, reflecting activation of Na+-Ca2+ exchange. It appears that a voltage-dependent Na+-Ca2+ exchange can rapidly mechanically relax mammalian heart muscle.

  8. NMR investigation of the isolated second voltage-sensing domain of human Nav1.4 channel.

    Science.gov (United States)

    Paramonov, A S; Lyukmanova, E N; Myshkin, M Yu; Shulepko, M A; Kulbatskii, D S; Petrosian, N S; Chugunov, A O; Dolgikh, D A; Kirpichnikov, M P; Arseniev, A S; Shenkarev, Z O

    2017-03-01

    Voltage-gated Na + channels are essential for the functioning of cardiovascular, muscular, and nervous systems. The α-subunit of eukaryotic Na + channel consists of ~2000 amino acid residues and encloses 24 transmembrane (TM) helices, which form five membrane domains: four voltage-sensing (VSD) and one pore domain. The structural complexity significantly impedes recombinant production and structural studies of full-sized Na + channels. Modular organization of voltage-gated channels gives an idea for studying of the isolated second VSD of human skeletal muscle Nav1.4 channel (VSD-II). Several variants of VSD-II (~150a.a., four TM helices) with different N- and C-termini were produced by cell-free expression. Screening of membrane mimetics revealed low stability of VSD-II samples in media containing phospholipids (bicelles, nanodiscs) associated with the aggregation of electrically neutral domain molecules. The almost complete resonance assignment of 13 C, 15 N-labeled VSD-II was obtained in LPPG micelles. The secondary structure of VSD-II showed similarity with the structures of bacterial Na + channels. The fragment of S4 TM helix between the first and second conserved Arg residues probably adopts 3 10 -helical conformation. Water accessibility of S3 helix, observed by the Mn 2+ titration, pointed to the formation of water-filled crevices in the micelle embedded VSD-II. 15 N relaxation data revealed characteristic pattern of μs-ms time scale motions in the VSD-II regions sharing expected interhelical contacts. VSD-II demonstrated enhanced mobility at ps-ns time scale as compared to isolated VSDs of K + channels. These results validate structural studies of isolated VSDs of Na + channels and show possible pitfalls in application of this 'divide and conquer' approach. Copyright © 2017 Elsevier B.V. All rights reserved.

  9. High-voltage isolation transformer for sub-nanosecond rise time pulses constructed with annular parallel-strip transmission lines.

    Science.gov (United States)

    Homma, Akira

    2011-07-01

    A novel annular parallel-strip transmission line was devised to construct high-voltage high-speed pulse isolation transformers. The transmission lines can easily realize stable high-voltage operation and good impedance matching between primary and secondary circuits. The time constant for the step response of the transformer was calculated by introducing a simple low-frequency equivalent circuit model. Results show that the relation between the time constant and low-cut-off frequency of the transformer conforms to the theory of the general first-order linear time-invariant system. Results also show that the test transformer composed of the new transmission lines can transmit about 600 ps rise time pulses across the dc potential difference of more than 150 kV with insertion loss of -2.5 dB. The measured effective time constant of 12 ns agreed exactly with the theoretically predicted value. For practical applications involving the delivery of synchronized trigger signals to a dc high-voltage electron gun station, the transformer described in this paper exhibited advantages over methods using fiber optic cables for the signal transfer system. This transformer has no jitter or breakdown problems that invariably occur in active circuit components.

  10. Analyzing the effect of gate dielectric on the leakage currents

    Directory of Open Access Journals (Sweden)

    Sakshi

    2016-01-01

    Full Text Available An analytical threshold voltage model for MOSFETs has been developed using different gate dielectric oxides by using MATLAB software. This paper explains the dependency of threshold voltage on the dielectric material. The variation in the subthreshold currents with the change in the threshold voltage sue to the change of dielectric material has also been studied.

  11. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on dipolar copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2014-01-01

    Dielectric elastomers (DES) are a promising new transducer technology, but high driving voltages limit their current commercial potential. One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric...

  12. Automatic monitoring of isolation state in low-voltage distribution network

    Directory of Open Access Journals (Sweden)

    Людмила Олександрівна Добровольська

    2017-06-01

    Full Text Available The article discusses the possibility of using the proposed functional isolation monitoring circuit with an additional high-frequency signal of 3500 Hz, introduced into the power network, which allows real-time detection of isolation leakage current not exceeding 8,5 mA. To check the isolation state it was decided to control leakage currents. To do this it is proposed to use the current control device developed by the authors that provides measurement of the currents in the lines and used by consumers. The device makes it possible to determine the magnitude and locations of the unauthorized taking away the power and to transmit the data to the control station wirelessly. It is proposed to extend the functionality of the device by automatically measuring leakage currents when monitoring the isolation state if current exceeds the permissible limits. This can be achieved by introducing a current control device of frequency-dependent selective amplifier of sinusoidal leakage currents that solves the problem of frequency separation and allows the isolation state control without disconnecting users from the network. Early detection and removal of defects of isolation before they become interfacial short circuits and dead ground short circuits will prevent the occurrence of dangerous situations, increase the reliability and service life of electrical networks and ensure uninterrupted power supply of consumers with electricity

  13. High-voltage boost quasi-Z-source isolated DC/DC converter

    DEFF Research Database (Denmark)

    Siwakoti, Yam P.; Blaabjerg, Frede; Loh, Poh Chiang

    2014-01-01

    converter uses less switches, a smaller common duty cycle and less turns for the transformer when compared with existing topologies. Its size and weight are therefore smaller, whereas its efficiency is higher. It is therefore well-suited for applications, where a wide range of voltage gain is required like...... renewable energy systems, DC power supplies found in telecom, aerospace and electric vehicles. To demonstrate the performance of the proposed converter, a 400 V, 500 W prototype has been implemented in the laboratory. Efficiency of the prototype measured is found to vary from 89.0 to 97.4% when its input...

  14. A high-stability scanning tunneling microscope achieved by an isolated tiny scanner with low voltage imaging capability

    International Nuclear Information System (INIS)

    Wang, Qi; Wang, Junting; Lu, Qingyou; Hou, Yubin

    2013-01-01

    We present a novel homebuilt scanning tunneling microscope (STM) with high quality atomic resolution. It is equipped with a small but powerful GeckoDrive piezoelectric motor which drives a miniature and detachable scanning part to implement coarse approach. The scanning part is a tiny piezoelectric tube scanner (industry type: PZT-8, whose d 31 coefficient is one of the lowest) housed in a slightly bigger polished sapphire tube, which is riding on and spring clamped against the knife edges of a tungsten slot. The STM so constructed shows low back-lashing and drifting and high repeatability and immunity to external vibrations. These are confirmed by its low imaging voltages, low distortions in the spiral scanned images, and high atomic resolution quality even when the STM is placed on the ground of the fifth floor without any external or internal vibration isolation devices

  15. A high-stability scanning tunneling microscope achieved by an isolated tiny scanner with low voltage imaging capability.

    Science.gov (United States)

    Wang, Qi; Hou, Yubin; Wang, Junting; Lu, Qingyou

    2013-11-01

    We present a novel homebuilt scanning tunneling microscope (STM) with high quality atomic resolution. It is equipped with a small but powerful GeckoDrive piezoelectric motor which drives a miniature and detachable scanning part to implement coarse approach. The scanning part is a tiny piezoelectric tube scanner (industry type: PZT-8, whose d31 coefficient is one of the lowest) housed in a slightly bigger polished sapphire tube, which is riding on and spring clamped against the knife edges of a tungsten slot. The STM so constructed shows low back-lashing and drifting and high repeatability and immunity to external vibrations. These are confirmed by its low imaging voltages, low distortions in the spiral scanned images, and high atomic resolution quality even when the STM is placed on the ground of the fifth floor without any external or internal vibration isolation devices.

  16. A high-stability scanning tunneling microscope achieved by an isolated tiny scanner with low voltage imaging capability

    Science.gov (United States)

    Wang, Qi; Hou, Yubin; Wang, Junting; Lu, Qingyou

    2013-11-01

    We present a novel homebuilt scanning tunneling microscope (STM) with high quality atomic resolution. It is equipped with a small but powerful GeckoDrive piezoelectric motor which drives a miniature and detachable scanning part to implement coarse approach. The scanning part is a tiny piezoelectric tube scanner (industry type: PZT-8, whose d31 coefficient is one of the lowest) housed in a slightly bigger polished sapphire tube, which is riding on and spring clamped against the knife edges of a tungsten slot. The STM so constructed shows low back-lashing and drifting and high repeatability and immunity to external vibrations. These are confirmed by its low imaging voltages, low distortions in the spiral scanned images, and high atomic resolution quality even when the STM is placed on the ground of the fifth floor without any external or internal vibration isolation devices.

  17. Low operating voltage InGaZnO thin-film transistors based on Al{sub 2}O{sub 3} high-k dielectrics fabricated using pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K. [Qingdao University, Qingdao (China); DongEui University, Busan (Korea, Republic of); Lee, W. J.; Shin, B. C. [DongEui University, Busan (Korea, Republic of); Cho, C. R. [Pusan National University, Busan (Korea, Republic of)

    2014-05-15

    Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al{sub 2}O{sub 3} dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al{sub 2}O{sub 3} and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al{sub 2}O{sub 3} gate dielectric exhibits a very low leakage current density of 1.3 x 10{sup -8} A/cm{sup 2} at 5 V and a high capacitance density of 60.9 nF/cm{sup 2}. The IGZO TFT with a structure of Ni/IGZO/Al{sub 2}O{sub 3}/Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm{sup 2}V{sup -1}s{sup -1}, an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10{sup 7}.

  18. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  19. Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

    Science.gov (United States)

    Xu, Meili; Xiang, Lanyi; Xu, Ting; Wang, Wei; Xie, Wenfa; Zhou, Dayu

    2017-10-01

    Future flexible electronic systems require memory devices combining low-power operation and mechanical bendability. However, high programming/erasing voltages, which are universally needed to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a route to achieve a low-voltage operating flexible Fe-OFET NVM. Utilizing vertical phase separation, an ultrathin self-organized poly(styrene) (PS) buffering layer covers the surface of the ferroelectric polymer layer by one-step spin-coating from their blending solution. The ferroelectric polymer with a low coercive field contributes to low-voltage operation in the Fe-OFET NVM. The polymer PS contributes to the improvement of mobility, attributing to screening the charge scattering and decreasing the surface roughness. As a result, a high performance flexible Fe-OFET NVM is achieved at the low P/E voltages of ±10 V, with a mobility larger than 0.2 cm2 V-1 s-1, a reliable P/E endurance over 150 cycles, stable data storage retention capability over 104 s, and excellent mechanical bending durability with a slight performance degradation after 1000 repetitive tensile bending cycles at a curvature radius of 5.5 mm.

  20. Isolated DC-DC Converter for Bidirectional Power Flow Controlling with Soft-Switching Feature and High Step-Up/Down Voltage Conversion

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2017-03-01

    Full Text Available In this paper, a novel isolated bidirectional DC-DC converter is proposed, which is able to accomplish high step-up/down voltage conversion. Therefore, it is suitable for hybrid electric vehicle, fuel cell vehicle, energy backup system, and grid-system applications. The proposed converter incorporates a coupled inductor to behave forward-and-flyback energy conversion for high voltage ratio and provide galvanic isolation. The energy stored in the leakage inductor of the coupled inductor can be recycled without the use of additional snubber mechanism or clamped circuit. No matter in step-up or step-down mode, all power switches can operate with soft switching. Moreover, there is a inherit feature that metal–oxide–semiconductor field-effect transistors (MOSFETs with smaller on-state resistance can be adopted because of lower voltage endurance at primary side. Operation principle, voltage ratio derivation, and inductor design are thoroughly described in this paper. In addition, a 1-kW prototype is implemented to validate the feasibility and correctness of the converter. Experimental results indicate that the peak efficiencies in step-up and step-down modes can be up to 95.4% and 93.6%, respectively.

  1. Development of a dielectric ceramic based on diatomite-titania part two: dielectric properties characterization

    Directory of Open Access Journals (Sweden)

    Medeiros Jamilson Pinto

    1998-01-01

    Full Text Available Dielectric properties of sintered diatomite-titania ceramics are presented. Specific capacitance, dissipation factor, quality factor and dielectric constant were determined as a function of sintering temperature, titania content and frequency; the temperature coefficient of capacitance was measured as a function of frequency. Besides leakage current, the dependence of the insulation resistance and the dielectric strength on the applied dc voltage were studied. The results show that diatomite-titania compositions can be used as an alternative dielectric.

  2. Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Yanfeng; Pan, Chengbin; Hui, Fei; Shi, Yuanyuan; Lanza, Mario, E-mail: mlanza@suda.edu.cn [Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123 (China); Zhang, Meiyun; Long, Shibing [Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Lian, Xiaojuan; Miao, Feng [National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Larcher, Luca [DISMI, Università di Modena e Reggio Emilia, 42122 Reggio Emilia (Italy); Wu, Ernest [IBM Research Division, Essex Junction, Vermont 05452 (United States)

    2016-01-04

    Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.

  3. Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors.

    Science.gov (United States)

    Padma, Narayanan; Maheshwari, Priya; Bhattacharya, Debarati; Tokas, Raj B; Sen, Shashwati; Honda, Yoshihide; Basu, Saibal; Pujari, Pradeep Kumar; Rao, T V Chandrasekhar

    2016-02-10

    Influence of substrate temperature on growth modes of copper phthalocyanine (CuPc) thin films at the dielectric/semiconductor interface in organic field effect transistors (OFETs) is investigated. Atomic force microscopy (AFM) imaging at the interface reveals a change from 'layer+island' to "island" growth mode with increasing substrate temperatures, further confirmed by probing the buried interfaces using X-ray reflectivity (XRR) and positron annihilation spectroscopic (PAS) techniques. PAS depth profiling provides insight into the details of molecular ordering while positron lifetime measurements reveal the difference in packing modes of CuPc molecules at the interface. XRR measurements show systematic increase in interface width and electron density correlating well with the change from layer + island to coalesced huge 3D islands at higher substrate temperatures. Study demonstrates the usefulness of XRR and PAS techniques to study growth modes at buried interfaces and reveals the influence of growth modes of semiconductor at the interface on hole and electron trap concentrations individually, thereby affecting hysteresis and threshold voltage stability. Minimum hole trapping is correlated to near layer by layer formation close to the interface at 100 °C and maximum to the island formation with large voids between the grains at 225 °C.

  4. High-Efficiency Isolated Boost DCDC Converter for High-Power Low-Voltage Fuel-Cell Applications

    DEFF Research Database (Denmark)

    Nymand, Morten; Andersen, Michael A. E.

    2010-01-01

    high winding losses. The analysis of transformer leakage inductance reveals that extremely low leakage inductance can be achieved, allowing stored energy to be dissipated. Power MOSFETs fully rated for repetitive avalanches allow primary-side voltage clamp circuits to be eliminated. The oversizing...

  5. Transient voltage oscillations in coils

    International Nuclear Information System (INIS)

    Chowdhuri, P.

    1985-01-01

    Magnet coils may be excited into internal voltage oscillations by transient voltages. Such oscillations may electrically stress the magnet's dielectric components to many times its normal stress. This may precipitate a dielectric failure, and the attendant prolonged loss of service and costly repair work. Therefore, it is important to know the natural frequencies of oscillations of a magnet during the design stage, and to determine whether the expected switching transient voltages can excite the magnet into high-voltage internal oscillations. The series capacitance of a winding significantly affects its natural frequencies. However, the series capacitance is difficult to calculate, because it may comprise complex capacitance network, consisting of intra- and inter-coil turn-to-turn capacitances of the coil sections. A method of calculating the series capacitance of a winding is proposed. This method is rigorous but simple to execute. The time-varying transient voltages along the winding are also calculated

  6. Study of Super Dielectric Material for Novel Paradigm Capacitors

    Science.gov (United States)

    2018-03-01

    density, power density, dielectric constant, constant current, constant voltage, electric field minimization, dipole 15. NUMBER OF PAGES 85 16. PRICE... Technology and Strategies for Improvement ..................................................................................6 4. Super Dielectric...ds infinitesimal displacement dt infinitesimal time DT discharge time dV infinitesimal voltage E electric field Etot total energy EC Lab

  7. Super Dielectric Materials.

    Science.gov (United States)

    Fromille, Samuel; Phillips, Jonathan

    2014-12-22

    Evidence is provided here that a class of materials with dielectric constants greater than 10⁵ at low frequency (dielectric materials (SDM), can be generated readily from common, inexpensive materials. Specifically it is demonstrated that high surface area alumina powders, loaded to the incipient wetness point with a solution of boric acid dissolved in water, have dielectric constants, near 0 Hz, greater than 4 × 10⁸ in all cases, a remarkable increase over the best dielectric constants previously measured for energy storage capabilities, ca. 1 × 10⁴. It is postulated that any porous, electrically insulating material (e.g., high surface area powders of silica, titania, etc. ), filled with a liquid containing a high concentration of ionic species will potentially be an SDM. Capacitors created with the first generated SDM dielectrics (alumina with boric acid solution), herein called New Paradigm Super (NPS) capacitors display typical electrostatic capacitive behavior, such as increasing capacitance with decreasing thickness, and can be cycled, but are limited to a maximum effective operating voltage of about 0.8 V. A simple theory is presented: Water containing relatively high concentrations of dissolved ions saturates all, or virtually all, the pores (average diameter 500 Å) of the alumina. In an applied field the positive ionic species migrate to the cathode end, and the negative ions to the anode end of each drop. This creates giant dipoles with high charge, hence leading to high dielectric constant behavior. At about 0.8 V, water begins to break down, creating enough ionic species to "short" the individual water droplets. Potentially NPS capacitor stacks can surpass "supercapacitors" in volumetric energy density.

  8. Super Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Samuel Fromille

    2014-12-01

    Full Text Available Evidence is provided here that a class of materials with dielectric constants greater than 105 at low frequency (<10−2 Hz, herein called super dielectric materials (SDM, can be generated readily from common, inexpensive materials. Specifically it is demonstrated that high surface area alumina powders, loaded to the incipient wetness point with a solution of boric acid dissolved in water, have dielectric constants, near 0 Hz, greater than 4 × 108 in all cases, a remarkable increase over the best dielectric constants previously measured for energy storage capabilities, ca. 1 × 104. It is postulated that any porous, electrically insulating material (e.g., high surface area powders of silica, titania, etc., filled with a liquid containing a high concentration of ionic species will potentially be an SDM. Capacitors created with the first generated SDM dielectrics (alumina with boric acid solution, herein called New Paradigm Super (NPS capacitors display typical electrostatic capacitive behavior, such as increasing capacitance with decreasing thickness, and can be cycled, but are limited to a maximum effective operating voltage of about 0.8 V. A simple theory is presented: Water containing relatively high concentrations of dissolved ions saturates all, or virtually all, the pores (average diameter 500 Å of the alumina. In an applied field the positive ionic species migrate to the cathode end, and the negative ions to the anode end of each drop. This creates giant dipoles with high charge, hence leading to high dielectric constant behavior. At about 0.8 V, water begins to break down, creating enough ionic species to “short” the individual water droplets. Potentially NPS capacitor stacks can surpass “supercapacitors” in volumetric energy density.

  9. A simple method for reducing inevitable dielectric loss in high-permittivity dielectric elastomers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Mazurek, Piotr Stanislaw

    2016-01-01

    elastomer matrix, with high dielectric permittivity and a low Young's modulus, aligned with no loss of mechanical stability, was prepared through the use of commercially available chloropropyl-functional silicone oil mixed into a tough commercial liquid silicone rubber silicone elastomer. The addition...... also decreased the dielectric losses of an elastomer containing dielectric permittivity-enhancing TiO2 fillers. Commercially available chloropropyl-functional silicone oil thus constitutes a facile method for improved silicone DEs, with very low dielectric losses.......Commercial viability of dielectric elastomers (DEs) is currently limited by a few obstacles, including high driving voltages (in the kV range). Driving voltage can be lowered by either decreasing the Young's modulus or increasing the dielectric permittivity of silicone elastomers, or a combination...

  10. Electrical breakdown phenomena of dielectric elastomers

    DEFF Research Database (Denmark)

    Mateiu, Ramona Valentina; Yu, Liyun; Skov, Anne Ladegaard

    2017-01-01

    Silicone elastomers have been heavily investigated as candidates for dielectric elastomers and are as such almost ideal candidates with their inherent softness and compliance but they suffer from low dielectric permittivity. This shortcoming has been sought optimized by many means during recent...... years. However, optimization with respect to the dielectric permittivity solely may lead to other problematic phenomena such as premature electrical breakdown. In this work, we investigate the electrical breakdown phenomena of various types of permittivity-enhanced silicone elastomers. Two types...... of silicone elastomers are investigated and different types of breakdown are discussed. Furthermore the use of voltage stabilizers in silicone-based dielectric elastomers is investigated and discussed....

  11. Electrical actuation of dielectric droplets

    International Nuclear Information System (INIS)

    Kumari, N; Bahadur, V; Garimella, S V

    2008-01-01

    Electrical actuation of liquid droplets at the microscale offers promising applications in the fields of microfluidics and lab-on-a-chip devices. Much prior research has targeted the electrical actuation of electrically conducting liquid droplets; however, the actuation of dielectric droplets has remained relatively unexplored, despite the advantages associated with the use of a dielectric droplet. This paper presents modeling and experimental results on the electrical actuation of dielectric droplets between two flat plates. A first-order analytical model, based on the energy-minimization principle, is developed to estimate the electrical actuation force on a dielectric droplet as it moves between two flat plates. Two versions of this analytical model are benchmarked for their suitability and accuracy against a detailed numerical model. The actuation force prediction is then combined with available semi-analytical expressions for predicting the forces opposing droplet motion to develop a model that predicts transient droplet motion under electrical actuation. Electrical actuation of dielectric droplets is experimentally demonstrated by moving transformer oil droplets between two flat plates under the influence of an actuation voltage. Droplet velocities and their dependence on the plate spacing and the applied voltage are experimentally measured and showed reasonable agreement with predictions from the models developed

  12. Development of the self-learning machine for creating models of microprocessor of single-phase earth fault protection devices in networks with isolated neutral voltage above 1000 V

    Science.gov (United States)

    Utegulov, B. B.; Utegulov, A. B.; Meiramova, S.

    2018-02-01

    The paper proposes the development of a self-learning machine for creating models of microprocessor-based single-phase ground fault protection devices in networks with an isolated neutral voltage higher than 1000 V. Development of a self-learning machine for creating models of microprocessor-based single-phase earth fault protection devices in networks with an isolated neutral voltage higher than 1000 V. allows to effectively implement mathematical models of automatic change of protection settings. Single-phase earth fault protection devices.

  13. 4Nx Non-Isolated and Non-Inverting Hybrid Interleaved Multilevel Boost Converter Based on VLCIm Cell and Cockroft Walton Voltage Multiplier for Renewable Energy Applications

    DEFF Research Database (Denmark)

    Bhaskar, Mahajan Sagar; Padmanaban, Sanjeevikumar; Blaabjerg, Frede

    2016-01-01

    In this treatise, 4Nx hybrid Non Inverting & Non Isolated (NI-NI) DC-DC interleaved multi-level boost converter (4Nx IMBC) for renewable energy applications is proposed. The proposed 4Nx IMBC is derived by coalescing the feature of 2Nx DC-DC Interleaved Multi-level Boost Converter (2Nx IMBC), vol...... or transformers. Simulations results of proposed circuitry are presented which verify the analysis, function, working modes & feasibility of proposed circuitry converter.......In this treatise, 4Nx hybrid Non Inverting & Non Isolated (NI-NI) DC-DC interleaved multi-level boost converter (4Nx IMBC) for renewable energy applications is proposed. The proposed 4Nx IMBC is derived by coalescing the feature of 2Nx DC-DC Interleaved Multi-level Boost Converter (2Nx IMBC...... applicable at user end its DC voltage magnitude needs to be incremented with high conversion. Existing and recently proposed DC-DC converter are not sufficiently expert to employ practically, because of stability issues, high duty cycle and high ripple in the output. To overcome the conversion ratio problem...

  14. Stimulation of Na+-alanine cotransport activates a voltage-dependent conductance in single proximal tubule cells isolated from frog kidney

    Science.gov (United States)

    Robson, L; Hunter, M

    1999-01-01

    The swelling induced by Na+-alanine cotransport in proximal tubule cells of the frog kidney is followed by regulatory volume decrease (RVD). This RVD is inhibited by gadolinium (Gd3+), an inhibitor of stretch-activated channels, but is independent of extracellular Ca2+. In this study, the whole cell patch clamp technique was utilized to examine the effect of Na+-alanine cotransport on two previously identified volume- and Gd3+-sensitive conductances. One conductance is voltage dependent and anion selective (GVD) whilst the other is voltage independent and cation selective (GVI). Addition of 5 mM L-alanine to the bathing solution increased the whole cell conductance and gave a positive (depolarizing) shift in the reversal potential (Vrev, equivalent to the membrane potential in current-clamped cells) consistent with activation of Na+-alanine cotransport. Vrev shifted from -36 ± 4·9 to +12·9 ± 4·2 mV (n= 15). In the presence of alanine, the total whole cell conductance had several components including the cotransporter conductance and GVD and GVI. These conductances were separated using Gd3+, which inhibits both GVD and GVI, and the time dependency of GVD. Of these two volume-sensitive conductances, L-alanine elicited a specific increase in GVD, whereas GVI was unaffected. The L-alanine-induced activation of GVD was significantly reduced when cells were incubated in a hypertonic bathing solution. In summary, in single proximal tubule cells isolated from frog kidney, on stimulation of Na+-alanine cotransport GVD is activated, while GVI is unaffected. Taken with other evidence, this suggests that GVD is activated by cell swelling, consequent upon alanine entry, and may play a role as an anion efflux pathway during alanine-induced volume regulation. PMID:10226159

  15. Vegetable oil based liquid nanocomposite dielectric

    Directory of Open Access Journals (Sweden)

    Leon Chetty

    2013-01-01

    Full Text Available Physically smaller dielectric materials would improve the optimisation of space for power systems. Development of nanotechnology provides an effective way to improve the performances of insulating oils used in power system applications. In this research study, we focused on the development of nanomodified vegetable oils to be used in power transformers. Higher conduction currents were observed in virgin linseed oil than in virgin castor oil. However, for both virgin linseed and virgin castor oil, the DC conduction current increased approximately linearly with the applied DC voltage. In nanomodified linseed oil, the characteristic curve showed two distinct regions: a linear region (at lower applied voltage and a saturation region (at slightly higher voltage. Conversely, in nanomodified castor oil, the characteristic curve showed three distinct regions: a linear region (at lower applied voltage, a saturation region (at intermediate applied voltage and an exponential growth region (at higher applied voltage. The nanomodified linseed oil exhibited a better dielectric performance than the nanomodified castor oil. Overall, the addition of nanodielectrics to vegetable oils decreased the dielectric performance of the vegetable oils. The results of this study contribute to the understanding of the pre-breakdown phenomenon in liquid nanocomposite dielectrics.

  16. Energy storage in ceramic dielectrics

    International Nuclear Information System (INIS)

    Love, G.R.

    1990-01-01

    Historically, multilayer ceramic capacitors (MLC's) have not been considered for energy storage applications for two primary reasons. First, physically large ceramic capacitors were very expensive and, second, total energy density obtainable was not nearly so high as in electrolytic capacitor types. More recently, the fabrication technology for MLC's has improved significantly, permitting both significantly higher energy density and significantly lower costs. Simultaneously, in many applications, total energy storage has become smaller, and the secondary requirements of very low effective series resistance and effective series inductance (which, together, determine how efficiently the energy may be stored and recovered) have become more important. It is therefore desirable to reexamine energy storage in ceramics for contemporary commercial and near-commercial dielectrics. Stored energy is proportional to voltage squared only in the case of paraelectric insulators, because only they have capacitance that is independent of bias voltage. High dielectric constant materials, however, are ferroics (that is ferroelectric and/or antiferroelectric) and display significant variation of effective dielectric constant with bias voltage

  17. On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs

    Directory of Open Access Journals (Sweden)

    Muhammad Nawaz

    2015-01-01

    Full Text Available This work deals with the assessment of gate dielectric for 4H-SiC MOSFETs using technology based two-dimensional numerical computer simulations. Results are studied for variety of gate dielectric candidates with varying thicknesses using well-known Fowler-Nordheim tunneling model. Compared to conventional SiO2 as a gate dielectric for 4H-SiC MOSFETs, high-k gate dielectric such as HfO2 reduces significantly the amount of electric field in the gate dielectric with equal gate dielectric thickness and hence the overall gate current density. High-k gate dielectric further reduces the shift in the threshold voltage with varying dielectric thicknesses, thus leading to better process margin and stable device operating behavior. For fixed dielectric thickness, a total shift in the threshold voltage of about 2.5 V has been observed with increasing dielectric constant from SiO2 (k=3.9 to HfO2 (k=25. This further results in higher transconductance of the device with the increase of the dielectric constant from SiO2 to HfO2. Furthermore, 4H-SiC MOSFETs are found to be more sensitive to the shift in the threshold voltage with conventional SiO2 as gate dielectric than high-k dielectric with the presence of interface state charge density that is typically observed at the interface of dielectric and 4H-SiC MOS surface.

  18. Dynamics of a Liquid Dielectric Attracted by a Cylindrical Capacitor

    Science.gov (United States)

    Nardi, Rafael; Lemos, Nivaldo A.

    2007-01-01

    The dynamics of a liquid dielectric attracted by a vertical cylindrical capacitor are studied. Contrary to what might be expected from the standard calculation of the force exerted by the capacitor, the motion of the dielectric is different depending on whether the charge or the voltage of the capacitor is held constant. The problem turns out to…

  19. A four-disulphide-bridged toxin, with high affinity towards voltage-gated K+ channels, isolated from Heterometrus spinnifer (Scorpionidae) venom.

    Science.gov (United States)

    Lebrun, B; Romi-Lebrun, R; Martin-Eauclaire, M F; Yasuda, A; Ishiguro, M; Oyama, Y; Pongs, O; Nakajima, T

    1997-11-15

    A new toxin, named HsTX1, has been identified in the venom of Heterometrus spinnifer (Scorpionidae), on the basis of its ability to block the rat Kv1.3 channels expressed in Xenopus oocytes. HsTX1 has been purified and characterized as a 34-residue peptide reticulated by four disulphide bridges. HsTX1 shares 53% and 59% sequence identity with Pandinus imperator toxin1 (Pi1) and maurotoxin, two recently isolated four-disulphide-bridged toxins, whereas it is only 32-47% identical with the other scorpion K+ channel toxins, reticulated by three disulphide bridges. The amidated and carboxylated forms of HsTX1 were synthesized chemically, and identity between the natural and the synthetic amidated peptides was proved by mass spectrometry, co-elution on C18 HPLC and blocking activity on the rat Kv1.3 channels. The disulphide bridge pattern was studied by (1) limited reduction-alkylation at acidic pH and (2) enzymic cleavage on an immobilized trypsin cartridge, both followed by mass and sequence analyses. Three of the disulphide bonds are connected as in the three-disulphide-bridged scorpion toxins, and the two extra half-cystine residues of HsTX1 are cross-linked, as in Pi1. These results, together with those of CD analysis, suggest that HsTX1 probably adopts the same general folding as all scorpion K+ channel toxins. HsTX1 is a potent inhibitor of the rat Kv1.3 channels (IC50 approx. 12 pM). HsTX1 does not compete with 125I-apamin for binding to its receptor site on rat brain synaptosomal membranes, but competes efficiently with 125I-kaliotoxin for binding to the voltage-gated K+ channels on the same preparation (IC50 approx. 1 pM).

  20. Actuated polymer based dielectric mirror for visual spectral range applications

    Science.gov (United States)

    Vergara, Pedro P.; Lunardi, Leda

    2017-08-01

    Miniature dielectric mirrors are useful components for lasers, thin film beam splitters and high quality mirrors in optics. These mirrors usually made from rigid inorganic materials can achieve a reflectance of almost one hundred percent. Being structural components, as soon as fabricated their reflectance and/or bandwidth remains constant. Here it is presented a novel fabrication process of a dielectric mirror based on free standing polymer layers. By applying an electrostatic force between the top and the bottom layers the reflectance can be changed. The large difference between the polymers refractive index and the air allows to achieve a reflectance of more than 85% using only six pairs of nanolayers. Preliminary simulations indicate an actuation speed of less than 1ms. Experimental optical characterization of fabricated structures agrees well with simulation results. Furthermore, structures can be designed to reflect a particular set of colors and/or isolated by using color filters, so a color pixel is fabricated, where the reflectance for each isolated color can be voltage controlled. Potential applications include an active component in a reflective screen display.

  1. Virtual gap dielectric wall accelerator

    Science.gov (United States)

    Caporaso, George James; Chen, Yu-Jiuan; Nelson, Scott; Sullivan, Jim; Hawkins, Steven A

    2013-11-05

    A virtual, moving accelerating gap is formed along an insulating tube in a dielectric wall accelerator (DWA) by locally controlling the conductivity of the tube. Localized voltage concentration is thus achieved by sequential activation of a variable resistive tube or stalk down the axis of an inductive voltage adder, producing a "virtual" traveling wave along the tube. The tube conductivity can be controlled at a desired location, which can be moved at a desired rate, by light illumination, or by photoconductive switches, or by other means. As a result, an impressed voltage along the tube appears predominantly over a local region, the virtual gap. By making the length of the tube large in comparison to the virtual gap length, the effective gain of the accelerator can be made very large.

  2. Non-isolated DC-AC converter with high voltage gain for autonomous systems of electric power; Conversor CC-CA nao isolado com alto ganho de tensao para aplicacao em sistemas autonomos de energia eletrica

    Energy Technology Data Exchange (ETDEWEB)

    Silveira, George Cajazeiras [Centro Federal de Educacao Tecnologica do Ceara (CEFET/CE), Fortaleza, CE (Brazil); Torrico-Bascope, Rene P. [Universidade Federal do Ceara (PPGEE/UFC), Fortaleza, CE (Brazil). Programa de Pos Graduacao em Engenharia Eletrica; Borges Neto, Manuel Rangel [Centro Federal de Educacao Tecnologica de Petrolina (CEFET-PET), PE (Brazil)

    2008-07-01

    A non-isolated DC-AC converter with high voltage gain with two output sinusoidal voltage - 110 V and 220 V - and frequency 60 Hz for application in autonomous systems of electric power is proposed in this work. This topology consists of a boost converter with high voltage gain, based on three-state switching cell combined with a double half bridge inverter. This configuration type the size and the cost are reduced and the efficiency is gotten better, due to the reduced number of switches. The converters that compose this topology operate with high frequency, reducing the volume of the magnetic materials. can be mention as important characteristics: the voltage stress across the switches of the boost converter are low, due they be naturally clamped by one output filter capacitor, which allows the utilization of switches with lower conduction resistances, and the waveforms of the output voltage of the double half bridge inverter supplies for the load it is sinusoidal and it possesses low harmonic content. (author)

  3. Dielectric capacitors with three-dimensional nanoscale interdigital electrodes for energy storage.

    Science.gov (United States)

    Han, Fangming; Meng, Guowen; Zhou, Fei; Song, Li; Li, Xinhua; Hu, Xiaoye; Zhu, Xiaoguang; Wu, Bing; Wei, Bingqing

    2015-10-01

    Dielectric capacitors are promising candidates for high-performance energy storage systems due to their high power density and increasing energy density. However, the traditional approach strategies to enhance the performance of dielectric capacitors cannot simultaneously achieve large capacitance and high breakdown voltage. We demonstrate that such limitations can be overcome by using a completely new three-dimensional (3D) nanoarchitectural electrode design. First, we fabricate a unique nanoporous anodic aluminum oxide (AAO) membrane with two sets of interdigitated and isolated straight nanopores opening toward opposite planar surfaces. By depositing carbon nanotubes in both sets of pores inside the AAO membrane, the new dielectric capacitor with 3D nanoscale interdigital electrodes is simply realized. In our new capacitors, the large specific surface area of AAO can provide large capacitance, whereas uniform pore walls and hemispheric barrier layers can enhance breakdown voltage. As a result, a high energy density of 2 Wh/kg, which is close to the value of a supercapacitor, can be achieved, showing promising potential in high-density electrical energy storage for various applications.

  4. Comparison of the dielectric electroactive polymer generator energy harvesting cycles

    DEFF Research Database (Denmark)

    Dimopoulos, Emmanouil; Trintis, Ionut; Munk-Nielsen, Stig

    2013-01-01

    The Dielectric ElectroActive Polymer (DEAP) generator energy harvesting cycles have been in the spotlight of the scientific interest for the past few years. Indeed, several articles have demonstrated thorough and comprehensive comparisons of the generator fundamental energy harvesting cycles......, namely Constant Charge (CC), Constant Voltage (CV) and Constant E-field (CE), based on averaged theoretical models. Yet, it has not been possible until present to validate the outcome of those comparisons via respective experimental results. In this paper, all three primary energy harvesting cycles...... are experimentally compared, based upon the coupling of a DEAP generator with a bidirectional non-isolated power electronic converter, by means of energy gain, energy harvesting efficiency and energy conversion efficiency....

  5. Low prepulse, high power density water dielectric switching

    International Nuclear Information System (INIS)

    Johnson, D.L.; VanDevender, J.P.; Martin, T.H.

    1979-01-01

    Prepulse voltage suppression has proven difficult in high power, high voltage accelerators employing self-breakdown water dielectric switches. A novel and cost effective water switch has been developed at Sandia Laboratories which reduces prepulse voltage by reducing the capacity across the switch. This prepulse suppression switch causes energy formerly stored in the switch capacity and dissipated in the arc to be useful output energy. The switching technique also allows the pulse forming lines to be stacked in parallel and electrically isolated from the load after the line has been discharged. The switch consists of a ground plane, with several holes, inserted between the switch electrodes. The output line switch electrodes extend through the holes and face electrodes on the pulse forming line (PFL). The capacity between the PFL and the output transmission line is reduced by about 80%. The gap spacing between the output line electrode and the hole in the ground plane is adjusted so that breakdown occurs after the main pulse and provides a crow bar between the load and the source. Performance data from the Proto II, Mite and Ripple test facilities are presented

  6. Detecting Faults In High-Voltage Transformers

    Science.gov (United States)

    Blow, Raymond K.

    1988-01-01

    Simple fixture quickly shows whether high-voltage transformer has excessive voids in dielectric materials and whether high-voltage lead wires too close to transformer case. Fixture is "go/no-go" indicator; corona appears if transformer contains such faults. Nests in wire mesh supported by cap of clear epoxy. If transformer has defects, blue glow of corona appears in mesh and is seen through cap.

  7. Nanostructure multilayer dielectric materials for capacitors and insulators

    Science.gov (United States)

    Barbee, Jr., Troy W.; Johnson, Gary W.

    1998-04-21

    A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many alternating layers of amorphous zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3). The dielectric-conductor interface layers are engineered for increased voltage breakdown and extended service life. The local interfacial work function is increased to reduce charge injection and thus increase breakdown voltage. Proper material choices can prevent electrochemical reactions and diffusion between the conductor and dielectric. Physical vapor deposition is used to deposit the zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3) in alternating layers to form a nano-laminate.

  8. Nanocomposite dielectrics in PbO-BaO-Na2O-Nb2O5-SiO2 system with high breakdown strength for high voltage capacitor applications.

    Science.gov (United States)

    Zhang, Qingmeng; Luo, Jun; Tang, Qun; Han, Dongfang; Zhou, Yi; Du, Jun

    2012-11-01

    Nanocomposite dielectrics in 6PbO-4BaO-20Na2O-40Nb2O5-30SiO2 system were prepared via melt-quenching followed by controlled crystallization. X-ray diffraction studies reveal that Pb2Nb2O7, Ba,NaNb5O15, NaNbO3 and PbNb2O6 phases are formed from the as-quenched glass annealed in temperature range from 700 degrees C to 850 degrees C. Ba2NaNb5O15, Pb2Nb2O7 crystallizes at 700 degrees C and then Pb2Nb2O7 disappears at 850 degrees C, while PbNb2O6 and NaNbO3 are formed at 850 degrees C. Microstructural observation shows that the crystallized particles are nanometer-sized and randomly distributed with glass matrix being often found at grain boundaries. The dielectric constant of the nanocomposites formed at different crystallization temperatures shows good frequency and electric field stability. The breakdown strength is slightly decreased when the glass-ceramics thickness is varied from 1 mm to 4 mm. The corresponding energy density could reach 2.96 J/cm3 with a breakdown strength of 58 kV/mm for thickness of 1 mm.

  9. 2.3-MW Medium-Voltage, Three-Level Wind Energy Inverter Applying a Unique Bus Structure and 4.5-kV Si/SiC Hybrid Isolated Power Modules: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Erdman, W.; Keller, J.; Grider, D.; VanBrunt, E.

    2014-11-01

    A high-efficiency, 2.3-MW, medium-voltage, three-level inverter utilizing 4.5-kV Si/SiC (silicon carbide) hybrid modules for wind energy applications is discussed. The inverter addresses recent trends in siting the inverter within the base of multimegawatt turbine towers. A simplified split, three-layer laminated bus structure that maintains low parasitic inductances is introduced along with a low-voltage, high-current test method for determining these inductances. Feed-thru bushings, edge fill methods, and other design features of the laminated bus structure provide voltage isolation that is consistent with the 10.4-kV module isolation levels. Inverter efficiency improvement is a result of the (essential) elimination of the reverse recovery charge present in 4.5-kV Si PIN diodes, which can produce a significant reduction in diode turn-off losses as well as insulated-gate bipolar transistor (IGBT) turn-on losses. The hybrid modules are supplied in industry-standard 140 mm x 130 mm and 190 mm x 130 mm packages to demonstrate direct module substitution into existing inverter designs. A focus on laminated bus/capacitor-bank/module subassembly level switching performance is presented.

  10. Silicone elastomers with superior softness and dielectric properties

    DEFF Research Database (Denmark)

    Yu, Liyun; Madsen, Frederikke Bahrt; Zakaria, Shamsul Bin

    Dielectric elastomers (DEs) change their shape and size under a high voltage or reversibly generate a high voltage when deformed. The obstacle of high driving voltages, however, limits the commercial viability of the technology at present. Driving voltage can be lowered by decreasing the Young......’s modulus and increasing the dielectric permittivity of silicone elastomers. One such prominent method of modifying the properties is by adding suitable additives. [1] The major drawbacks for adding solid fillers are agglomeration and increasing stiffness which is often accompanied by the decrease...... were determined by NMR and morphology structures were investigated by optical microscopy. The resulting elastomers were evaluated with respect to their dielectric permittivity, tear and tensile strengths, as well as electrical breakdown.The breakdown strength increased at low amounts of additives...

  11. Super dielectric capacitor using scaffold dielectric

    OpenAIRE

    Phillips, Jonathan

    2018-01-01

    Patent A capacitor having first and second electrodes and a scaffold dielectric. The scaffold dielectric comprises an insulating material with a plurality of longitudinal channels extending across the dielectric and filled with a liquid comprising cations and anions. The plurality of longitudinal channels are substantially parallel and the liquid within the longitudinal channels generally has an ionic strength of at least 0.1. Capacitance results from the migrations of...

  12. Inertial polarization of dielectrics

    OpenAIRE

    Zavodovsky, A. G.

    2011-01-01

    It was proved that accelerated motion of a linear dielectric causes its polarization. Accelerated translational motion of a dielectric's plate leads to the positive charge of the surface facing the direction of motion. Metal plates of a capacitor were used to register polarized charges on a dielectric's surface. Potential difference between the capacitor plates is proportional to acceleration, when acceleration is constant potential difference grows with the increase of a dielectric's area, o...

  13. Optimal Super Dielectric Material

    Science.gov (United States)

    2015-09-01

    plate capacitor will reduce the net field to an unprecedented extent. This family of materials can form materials with dielectric values orders of... Capacitor -Increase Area (A)............8 b. Multi-layer Ceramic Capacitor -Decrease Thickness (d) .......10 c. Super Dielectric Material-Increase...circuit modeling, from [44], and B) SDM capacitor charge and discharge ...................................................22 Figure 15. Dielectric

  14. Super soft silicone elastomers with high dielectric permittivity

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Hvilsted, Søren

    2015-01-01

    Dielectric elastomers (DEs) have many favourable properties. The obstacle of high driving voltages, however, limits the commercial viability of the technology at present. Driving voltage can be lowered by decreasing the Young’s modulus and increasing the dielectric permittivity of silicone...... elastomers. A decrease in Young’s modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE. New soft elastomer matrices with high dielectric permittivity and low Young’s modulus, with no loss of mechanical stability, were prepared by two different...... approaches using chloropropyl-functional silicone polymers. The first approach was based on synthesised chloropropyl-functional copolymers that were cross-linkable and thereby formed the basis of new silicone networks with high dielectric permittivity (e.g. a 43% increase). These networks were soft without...

  15. Dielectrics in electric fields

    CERN Document Server

    Raju, Gorur G

    2003-01-01

    Discover nontraditional applications of dielectric studies in this exceptionally crafted field reference or text for seniors and graduate students in power engineering tracks. This text contains more than 800 display equations and discusses polarization phenomena in dielectrics, the complex dielectric constant in an alternating electric field, dielectric relaxation and interfacial polarization, the measurement of absorption and desorption currents in time domains, and high field conduction phenomena. Dielectrics in Electric Fields is an interdisciplinary reference and text for professionals and students in electrical and electronics, chemical, biochemical, and environmental engineering; physical, surface, and colloid chemistry; materials science; and chemical physics.

  16. Lattices of dielectric resonators

    CERN Document Server

    Trubin, Alexander

    2016-01-01

    This book provides the analytical theory of complex systems composed of a large number of high-Q dielectric resonators. Spherical and cylindrical dielectric resonators with inferior and also whispering gallery oscillations allocated in various lattices are considered. A new approach to S-matrix parameter calculations based on perturbation theory of Maxwell equations, developed for a number of high-Q dielectric bodies, is introduced. All physical relationships are obtained in analytical form and are suitable for further computations. Essential attention is given to a new unified formalism of the description of scattering processes. The general scattering task for coupled eigen oscillations of the whole system of dielectric resonators is described. The equations for the  expansion coefficients are explained in an applicable way. The temporal Green functions for the dielectric resonator are presented. The scattering process of short pulses in dielectric filter structures, dielectric antennas  and lattices of d...

  17. Thermodynamics and instability of dielectric elastomer (Conference Presentation)

    Science.gov (United States)

    Liu, Liwu; Liu, Yanju; Leng, Jinsong; Mu, Tong

    2017-04-01

    Dielectric elastomer is a kind of typical soft active material. It can deform obviously when subjected to an external voltage. When a dielectric elastomer with randomly oriented dipoles is subject to an electric field, the dipoles will rotate to and align with the electric field. The polarization of the dielectric elastomer may be saturated when the voltage is high enough. When subjected to a mechanical force, the end-to-end distance of each polymer chain, which has a finite contour length, will approach the finite value, reaching a limiting stretch. On approaching the limiting stretch, the elastomer stiffens steeply. Here, we develop a thermodynamic constitutive model of dielectric elastomers undergoing polarization saturation and strain-stiffening, and then investigate the stability (electromechanical stability, snap-through stability) and voltage induced deformation of dielectric elastomers. Analytical solution has been obtained and it reveals the marked influence of the extension limit and polarization saturation limit on its instability. The developed thermodynamic constitutive model and simulation results would be helpful in future to the research of dielectric elastomer based high-performance transducers.

  18. Self-Healing, High-Permittivity Silicone Dielectric Elastomer

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Skov, Anne Ladegaard

    2016-01-01

    possesses high dielectric permittivity and consists of an interpenetrating polymer network of silicone elastomer and ionic silicone species that are cross-linked through proton exchange between amines and acids. The ionically cross-linked silicone provides self-healing properties after electrical breakdown...... or cuts made directly to the material due to the reassembly of the ionic bonds that are broken during damage. The dielectric elastomers presented in this paper pave the way to increased lifetimes and the ability of dielectric elastomers to survive millions of cycles in high-voltage conditions....

  19. Breakdown of coupling dielectrics for Si microstrip detectors

    International Nuclear Information System (INIS)

    Candelori, A.; Paccagnella, A.; Padova Univ.; Saglimbeni, G.

    1999-01-01

    Double-layer coupling dielectrics for AC-coupled Si microstrip detectors have been electrically characterized in order to determine their performance in a radiation-harsh environment, with a focus on the dielectric breakdown. Two different dielectric technologies have been investigated: SiO 2 /TEOS and SiO 2 /Si 3 N 4 . Dielectrics have been tested by using a negative gate voltage ramp of 0.2 MV/(cm·s). The metal/insulator/Si I-V characteristics show different behaviours depending on the technology. The extrapolated values of the breakdown field for unirradiated devices are significantly higher for SiO 2 /Si 3 N 4 dielectrics, but the data dispersion is lower for SiO 2 /TEOS devices. No significant variation of the breakdown field has been measured after a 10 Mrad (Si) γ irradiation for SiO 2 /Si 3 N 4 dielectrics. Finally, the SiO 2 /Si 3 N 4 DC conduction is enhanced if a positive gate voltage ramp is applied with respect to the negative one, due to the asymmetric conduction of the double-layer dielectric

  20. Cathode fall measurement in a dielectric barrier discharge in helium

    Energy Technology Data Exchange (ETDEWEB)

    Hao, Yanpeng; Zheng, Bin; Liu, Yaoge [School of Electric Power, South China University of Technology, Guangzhou 510640 (China)

    2013-11-15

    A method based on the “zero-length voltage” extrapolation is proposed to measure cathode fall in a dielectric barrier discharge. Starting, stable, and discharge-maintaining voltages were measured to obtain the extrapolation zero-length voltage. Under our experimental conditions, the “zero-length voltage” gave a cathode fall of about 185 V. Based on the known thickness of the cathode fall region, the spatial distribution of the electric field strength in dielectric barrier discharge in atmospheric helium is determined. The strong cathode fall with a maximum field value of approximately 9.25 kV/cm was typical for the glow mode of the discharge.

  1. High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

    Energy Technology Data Exchange (ETDEWEB)

    Hasan, Musarrat; Nguyen, Manh-Cuong; Kim, Hyojin; You, Seung-Won; Jeon, Yoon-Seok; Tong, Duc-Tai; Lee, Dong-Hwi; Jeong, Jae Kyeong; Choi, Rino, E-mail: rino.choi@inha.ac.kr

    2015-08-31

    This paper reports a solution processed electrical device with zirconium oxide gate dielectric that was fabricated at a low enough temperature appropriate for flexible electronics. Both inorganic dielectric and channel materials were synthesized in the same organic solvent. The dielectric constant achieved was 13 at 250 °C with a reasonably low leakage current. The bottom gate transistor devices showed the highest mobility of 75 cm{sup 2}/V s. The device is operated at low voltage with high-k dielectric with excellent transconductance and low threshold voltage. Overall, the results highlight the potential of low temperature solution based deposition in fabricating more complicated circuits for a range of applications. - Highlights: • We develop a low temperature inorganic dielectric deposition process. • We fabricate oxide semiconductor channel devices using all-solution processes. • Same solvent is used for dielectric and oxide semiconductor deposition.

  2. Evaluation of high temperature capacitor dielectrics

    Science.gov (United States)

    Hammoud, Ahmad N.; Myers, Ira T.

    1992-01-01

    Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

  3. Ropivacaine-Induced Contraction Is Attenuated by Both Endothelial Nitric Oxide and Voltage-Dependent Potassium Channels in Isolated Rat Aortae

    Directory of Open Access Journals (Sweden)

    Seong-Ho Ok

    2013-01-01

    Full Text Available This study investigated endothelium-derived vasodilators and potassium channels involved in the modulation of ropivacaine-induced contraction. In endothelium-intact rat aortae, ropivacaine concentration-response curves were generated in the presence or absence of the following inhibitors: the nonspecific nitric oxide synthase (NOS inhibitor Nω-nitro-L-arginine methyl ester (L-NAME, the neuronal NOS inhibitor Nω-propyl-L-arginine hydrochloride, the inducible NOS inhibitor 1400W dihydrochloride, the nitric oxide-sensitive guanylyl cyclase (GC inhibitor ODQ, the NOS and GC inhibitor methylene blue, the phosphoinositide-3 kinase inhibitor wortmannin, the cytochrome p450 epoxygenase inhibitor fluconazole, the voltage-dependent potassium channel inhibitor 4-aminopyridine (4-AP, the calcium-activated potassium channel inhibitor tetraethylammonium (TEA, the inward-rectifying potassium channel inhibitor barium chloride, and the ATP-sensitive potassium channel inhibitor glibenclamide. The effect of ropivacaine on endothelial nitric oxide synthase (eNOS phosphorylation in human umbilical vein endothelial cells was examined by western blotting. Ropivacaine-induced contraction was weaker in endothelium-intact aortae than in endothelium-denuded aortae. L-NAME, ODQ, and methylene blue enhanced ropivacaine-induced contraction, whereas wortmannin, Nω-propyl-L-arginine hydrochloride, 1400W dihydrochloride, and fluconazole had no effect. 4-AP and TEA enhanced ropivacaine-induced contraction; however, barium chloride and glibenclamide had no effect. eNOS phosphorylation was induced by ropivacaine. These results suggest that ropivacaine-induced contraction is attenuated primarily by both endothelial nitric oxide and voltage-dependent potassium channels.

  4. PREFACE: Dielectrics 2009: Measurement Analysis and Applications

    Science.gov (United States)

    Vaughan, Alun; Williams, Graham

    2009-07-01

    The conference Dielectrics 2009: Measurements, Analysis and Applications represents a significant milestone in the evolution of dielectrics research in the UK. It is reasonable to state that the academic study of dielectrics has led to many fundamental advances and that dielectric materials underpin the modern world in devices ranging from field effect transistors, which operate at extremely high fields, albeit low voltages, to the high voltage plants that provide the energy that powers our economy. The origins of the Dielectrics Group of the Institute of Physics (IOP), which organized this conference, can be traced directly back to the early 1960s, when Professor Mansel Davies was conducting research into the dielectric relaxation behaviour of polar liquids and solids at The Edward Davies Chemical Laboratories of the University College of Wales, Aberystwyth. He was already well-known internationally for his studies of molecular structure and bonding of small molecules, using infra-red-spectroscopy, and of the physical properties of hydrogen-bonded liquids and solids, using thermodynamic methods. Dielectric spectroscopy was a fairly new area for him and he realized that opportunities for scientists in the UK to gather together and discuss their research in this developing area of physical chemistry/chemical physics were very limited. He conceived the idea of forming a Dielectrics Discussion Group (DDG), which would act as a meeting point and provide a platform for dielectrics research in the UK and beyond and, as a result, a two-day Meeting was convened in the spring of 1968 at Gregynog Hall of the University of Wales, near Newtown, Montgomeryshire. It was organized by Mansel Davies, Alun Price and Graham Williams, all physical chemists from the UCW, Aberystwyth. Fifty scientists attended, being a mix of physical chemists, theoretical chemists, physicists, electrical engineers, polymer and materials scientists, all from the UK, except Dr Brendan Scaife of Trinity

  5. Characterization of dielectric materials

    Energy Technology Data Exchange (ETDEWEB)

    King, Danny J.; Babinec, Susan; Hagans, Patrick L.; Maxey, Lonnie C.; Payzant, Edward A.; Daniel, Claus; Sabau, Adrian S.; Dinwiddie, Ralph B.; Armstrong, Beth L.; Howe, Jane Y.; Wood, III, David L.; Nembhard, Nicole S.

    2017-06-27

    A system and a method for characterizing a dielectric material are provided. The system and method generally include applying an excitation signal to electrodes on opposing sides of the dielectric material to evaluate a property of the dielectric material. The method can further include measuring the capacitive impedance across the dielectric material, and determining a variation in the capacitive impedance with respect to either or both of a time domain and a frequency domain. The measured property can include pore size and surface imperfections. The method can still further include modifying a processing parameter as the dielectric material is formed in response to the detected variations in the capacitive impedance, which can correspond to a non-uniformity in the dielectric material.

  6. Measurement Error Estimation for Capacitive Voltage Transformer by Insulation Parameters

    Directory of Open Access Journals (Sweden)

    Bin Chen

    2017-03-01

    Full Text Available Measurement errors of a capacitive voltage transformer (CVT are relevant to its equivalent parameters for which its capacitive divider contributes the most. In daily operation, dielectric aging, moisture, dielectric breakdown, etc., it will exert mixing effects on a capacitive divider’s insulation characteristics, leading to fluctuation in equivalent parameters which result in the measurement error. This paper proposes an equivalent circuit model to represent a CVT which incorporates insulation characteristics of a capacitive divider. After software simulation and laboratory experiments, the relationship between measurement errors and insulation parameters is obtained. It indicates that variation of insulation parameters in a CVT will cause a reasonable measurement error. From field tests and calculation, equivalent capacitance mainly affects magnitude error, while dielectric loss mainly affects phase error. As capacitance changes 0.2%, magnitude error can reach −0.2%. As dielectric loss factor changes 0.2%, phase error can reach 5′. An increase of equivalent capacitance and dielectric loss factor in the high-voltage capacitor will cause a positive real power measurement error. An increase of equivalent capacitance and dielectric loss factor in the low-voltage capacitor will cause a negative real power measurement error.

  7. Inductive dielectric analyzer

    International Nuclear Information System (INIS)

    Agranovich, Daniel; Popov, Ivan; Ben Ishai, Paul; Feldman, Yuri; Polygalov, Eugene

    2017-01-01

    One of the approaches to bypass the problem of electrode polarization in dielectric measurements is the free electrode method. The advantage of this technique is that, the probing electric field in the material is not supplied by contact electrodes, but rather by electromagnetic induction. We have designed an inductive dielectric analyzer based on a sensor comprising two concentric toroidal coils. In this work, we present an analytic derivation of the relationship between the impedance measured by the sensor and the complex dielectric permittivity of the sample. The obtained relationship was successfully employed to measure the dielectric permittivity and conductivity of various alcohols and aqueous salt solutions. (paper)

  8. Method of making dielectric capacitors with increased dielectric breakdown strength

    Science.gov (United States)

    Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

    2017-05-09

    The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

  9. Voltage regulating circuit

    NARCIS (Netherlands)

    2005-01-01

    A voltage regulating circuit comprising a rectifier (2) for receiving an AC voltage (Vmains) and for generating a rectified AC voltage (vrec), and a capacitor (3) connected in parallel with said rectified AC voltage for providing a DC voltage (VDC) over a load (5), characterized by a unidirectional

  10. Contemporary dielectric materials

    CERN Document Server

    Saravanan, R

    2016-01-01

    This book deals with experimental results of the physical characterization of several important, dielectric materials of great current interest. The experimental tools used for the analysis of these materials include X-ray diffraction, dielectric measurements, magnetic measurements using a vibrating sample magnetometer, optical measurements using a UV-Visible spectrometer etc.

  11. Dielectric Modulated FET (DMFET)

    Indian Academy of Sciences (India)

    First page Back Continue Last page Graphics. Working Principle: Change in Dielectric constant due to immobilization of biomolecules in the nanogap cavity leads to change in effective gate capacitance and thus gate bias for FET. Working Principle: Change in Dielectric constant due to immobilization of biomolecules in the ...

  12. Thermal dielectric function

    International Nuclear Information System (INIS)

    Moneta, M.

    1999-01-01

    Thermal dielectric functions ε(k,ω) for homogeneous electron gas were determined and discussed. The ground state of the gas is described by the Fermi-Dirac momentum distribution. The low and high temperature limits of ε(k,ω) were related to the Lindhard dielectric function and to ε(k, omega) derived for Boltzmann and for classical momentum distributions, respectively. (author)

  13. Light in complex dielectrics

    NARCIS (Netherlands)

    Schuurmans, F.J.P.

    1999-01-01

    In this thesis the properties of light in complex dielectrics are described, with the two general topics of "modification of spontaneous emission" and "Anderson localization of light". The first part focuses on the spontaneous emission rate of an excited atom in a dielectric host with variable

  14. Absorption Voltages and Insulation Resistance in Ceramic Capacitors with Cracks

    Science.gov (United States)

    Teverovsky, Alexander

    2016-01-01

    Time dependence of absorption voltages (Vabs) in different types of low-voltage X5R and X7R ceramic capacitors was monitored for a maximum duration of hundred hours after polarization. To evaluate the effect of mechanical defects on Vabs, cracks in the dielectric were introduced either mechanically or by thermal shock. The maximum absorption voltage, time to roll-off, and the rate of voltage decrease are shown to depend on the crack-related leakage currents and insulation resistance in the parts. A simple model that is based on the Dow equivalent circuit for capacitors with absorption has been developed to assess the insulation resistance of capacitors. Standard measurements of the insulation resistance, contrary to the measurements based on Vabs, are not sensitive to the presence of mechanical defects and fail to reveal capacitors with cracks. Index Terms: Ceramic capacitor, insulation resistance, dielectric absorption, cracking.

  15. A rugged 650 V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications

    Science.gov (United States)

    Hua, Qing; Li, Zehong; Zhang, Bo; Chen, Weizhong; Huang, Xiangjun; Feng, Yuxiang

    2015-05-01

    This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650 V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3 V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 μm, 650 V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779 V at 25°C, and the leakage current is only 5 nA at 650 V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.

  16. Hexagon and stripe patterns in dielectric barrier streamer discharge

    International Nuclear Information System (INIS)

    Dong Lifang; He Yafeng; Yin Zengqian; Chai Zhifang

    2004-01-01

    We present a specially designed dielectric barrier discharge (DBD) system for the study of pattern formation. Hexagon and stripe patterns have been observed in a streamer discharge in a DBD for the first time. The phase diagram of pattern types as a function of applied voltage is given

  17. Time domain PD-detection vs. dielectric spectroscopy

    DEFF Research Database (Denmark)

    Holbøll, Joachim T.; Edin, Hans; Gäfvert, Uno

    1997-01-01

    A theoretically developed relationship between partial discharges and the response from a system for dielectric spectroscopy was experimentally confirmed. The losses caused by the discharges were highest at test voltages with low frequencies. At 0.1 Hz, tanδ tip-up at discharge inception was very...

  18. Nanostructured Anodic Multilayer Dielectric Stacked Metal-Insulator-Metal Capacitors.

    Science.gov (United States)

    Karthik, R; Kannadassan, D; Baghini, Maryam Shojaei; Mallick, P S

    2015-12-01

    This paper presents the fabrication of Al2O3/TiO2/Al2O3 metal-insulator-metal (MIM) capacitor using anodization technique. High capacitance density of > 3.5 fF/μm2, low quadratic voltage coefficient of capacitance of dielectric stack required for high performance MIM capacitor.

  19. Novel dielectric reduces corona breakdown in ac capacitors

    Science.gov (United States)

    Loehner, J. L.

    1972-01-01

    Dielectric system was developed which consists of two layers of 25-gage paper separated by one layer of 50-gage polypropylene to reduce corona breakdown in ac capacitors. System can be used in any alternating current application where constant voltage does not exceed 400 V rms. With a little research it could probably be increased to 700 to 800 V rms.

  20. A new soft dielectric silicone elastomer matrix with high mechanical integrity and low losses

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2015-01-01

    Though dielectric elastomers (DEs) have many favourable properties, the issue of high driving voltages limits the commercial viability of the technology. Driving voltage can be lowered by decreasing the Young's modulus and increasing the dielectric permittivity of silicone elastomers. A decrease...... in Young's modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE. A new soft elastomer matrix, with no loss of mechanical stability and high dielectric permittivity, was prepared through the use of alkyl chloride-functional siloxane copolymers...

  1. Input-output rearrangement of isolated converters

    DEFF Research Database (Denmark)

    Madsen, Mickey Pierre; Kovacevic, Milovan; Mønster, Jakob Døllner

    2015-01-01

    This paper presents a new way of rearranging the input and output of isolated converters. The new arrangement posses several advantages, as increased voltage range, higher power handling capabilities, reduced voltage stress and improved efficiency, for applications where galvanic isolation...

  2. An Approach for Measuring the Dielectric Strength of OLED Materials

    Directory of Open Access Journals (Sweden)

    Sujith Sudheendran Swayamprabha

    2018-06-01

    Full Text Available Surface roughness of electrodes plays a key role in the dielectric breakdown of thin-film organic devices. The rate of breakdown will increase when there are stochastic sharp spikes on the surface of electrodes. Additionally, surface having spiking morphology makes the determination of dielectric strength very challenging, specifically when the layer is relatively thin. We demonstrate here a new approach to investigate the dielectric strength of organic thin films for organic light-emitting diodes (OLEDs. The thin films were deposited on a substrate using physical vapor deposition (PVD under high vacuum. The device architectures used were glass substrate/indium tin oxide (ITO/organic material/aluminum (Al and glass substrate/Al/organic material/Al. The dielectric strength of the OLED materials was evaluated from the measured breakdown voltage and layer thickness.

  3. Dielectric elastomer actuators used for pneumatic valve technology

    International Nuclear Information System (INIS)

    Giousouf, Metin; Kovacs, Gabor

    2013-01-01

    Dielectric elastomer actuators have been investigated for applications in the field of pneumatic automation technology. We have developed different valve designs with stacked dielectric elastomer actuators and with integrated high voltage converters. The actuators were made using VHB-4910 material and a stacker machine for automated fabrication of the cylindrical actuators. Typical characteristics of pneumatic valves such as flow rate, power consumption and dynamic behaviour are presented. For valve construction the force and stroke parameters of the dielectric elastomer actuator have been measured. Further, benefits for valve applications using dielectric elastomers are shown as well as their potential operational area. Finally, challenges are discussed that are relevant for the use of elastomer actuators in valves for industrial applications. (paper)

  4. Effect of an azo dye (DR1) on the dielectric parameters of a nematic liquid crystal system

    International Nuclear Information System (INIS)

    Ozder, S.; Okutan, M.; Koeysal, O.; Goektas, H.; San, S.E.

    2007-01-01

    The dielectric parameters and relaxation properties of azo dye (DR1) doped E7 and pure E7 liquid crystal (LC) have been investigated in a wide frequency range of 10 k-10 MHz through the dielectric spectroscopy method at room temperature. Dielectric anisotropy (Δε) property of the LC changes from the positive type to negative type and dielectric anisotropy values decrease with doping of DR1. The relaxation frequency f r of E7 and E7/DR1 LC was calculated by means of Cole-Cole plots. Influence of bias voltage on the dielectric parameters has also been investigated

  5. Dielectric Elastomers for Fluidic and Biomedical Applications

    Science.gov (United States)

    McCoul, David James

    Dielectric elastomers have demonstrated tremendous potential as high-strain electromechanical transducers for a myriad of novel applications across all engineering disciplines. Because their soft, viscoelastic mechanical properties are similar to those of living tissues, dielectric elastomers have garnered a strong foothold in a plethora of biomedical and biomimetic applications. Dielectric elastomers consist of a sheet of stretched rubber, or elastomer, coated on both sides with compliant electrode materials; application of a voltage generates an electrostatic pressure that deforms the elastomer. They can function as soft generators, sensors, or actuators, and this last function is the focus of this dissertation. Many design configurations are possible, such as stacks, minimum energy structures, interpenetrating polymer networks, shape memory dielectric elastomers, and others; dielectric elastomers are already being applied to many fields of biomedicine. The first part of the original research presented in this dissertation details a PDMS microfluidic system paired with a dielectric elastomer stack actuator of anisotropically prestrained VHB(TM) 4910 (3M(TM)) and single-walled carbon nanotubes. These electroactive microfluidic devices demonstrated active increases in microchannel width when 3 and 4 kV were applied. Fluorescence microscopy also indicated an accompanying increase in channel depth with actuation. The cross-sectional area strains at 3 and 4 kV were approximately 2.9% and 7.4%, respectively. The device was then interfaced with a syringe pump, and the pressure was measured upstream. Linear pressure-flow plots were developed, which showed decreasing fluidic resistance with actuation, from 0.192 psi/(microL/min) at 0 kV, to 0.160 and 0.157 psi/(microL/min) at 3 and 4 kV, respectively. This corresponds to an ~18% drop in fluidic resistance at 4 kV. Active de-clogging was tested in situ with the device by introducing ~50 microm diameter PDMS microbeads and

  6. Measured current drainage through holes in various dielectrics up to 2 kilovolts in a dilute plasma

    Science.gov (United States)

    Grier, N. T.; Mckinzie, D. J., Jr.

    1972-01-01

    The electron current drained from a plasma through approximately 0.05 cm diameter holes in eight possible space applicable dielectrics placed on a probe biased at voltages up to 2000 V dc have been determined both theoretically and experimentally. The dielectrics tested were Parylene C and N, Teflon FEP type C, Teflon TFE, Nomex, quartz 7940 Corning Glass, Mylar A, and Kapton H polymide film. A Laplace field was used to predict an upper limit for the drainage current. The measured current was less than the computed current for quartz, Teflon FEP, and the 0.0123 cm thick sample of Parylene N for all voltages tested. The drainage current through the other dielectrics became equal to or greater than the computed current at a voltage below 2000 V. The magnitudes of the currents were between 0.1 and 10 microamperes for most of the dielectrics.

  7. Improved Dielectric Films For Capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S.; Lewis, Carol R.; Cygan, Peter J.; Jow, T. Richard

    1994-01-01

    Dielectric films made from blends of some commercially available high-dielectric-constant cyanoresins with each other and with cellulose triacetate (CTA) have both high dielectric constants and high breakdown strengths. Dielectric constants as high as 16.2. Films used to produce high-energy-density capacitors.

  8. Microwave integrated circuit for Josephson voltage standards

    Science.gov (United States)

    Holdeman, L. B.; Toots, J.; Chang, C. C. (Inventor)

    1980-01-01

    A microwave integrated circuit comprised of one or more Josephson junctions and short sections of microstrip or stripline transmission line is fabricated from thin layers of superconducting metal on a dielectric substrate. The short sections of transmission are combined to form the elements of the circuit and particularly, two microwave resonators. The Josephson junctions are located between the resonators and the impedance of the Josephson junctions forms part of the circuitry that couples the two resonators. The microwave integrated circuit has an application in Josephson voltage standards. In this application, the device is asymmetrically driven at a selected frequency (approximately equal to the resonance frequency of the resonators), and a d.c. bias is applied to the junction. By observing the current voltage characteristic of the junction, a precise voltage, proportional to the frequency of the microwave drive signal, is obtained.

  9. Dielectric barrier discharges applied for soft ionization and their mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Brandt, Sebastian; Klute, Felix David; Schütz, Alexander; Franzke, Joachim, E-mail: joachim.franzke@isas.de

    2017-01-25

    Dielectric barrier discharges are used for analytical applications as dissociative source for optical emission spectrometry and for ambient-ionization techniques. In the range of ambient-ionization techniques it has attracted much attention in fields like food safety, biological analysis, mass spectrometry for reaction monitoring and imaging forensic identification. In this review some examples are given for the application as desorption/ionization source as well as for the sole application as ionization source with different sample introductions. It will be shown that the detection might depend on the certain distance of the plasma in reference to the sample or the kind of discharge which might be produced by different shapes of the applied high voltage. Some attempts of characterization are presented. A more detailed characterization of the dielectric barrier discharge realized with two ring electrodes, each separately covered with a dielectric layer, is described. - Highlights: • Dielectric barrier discharge applied as desorption/ionization source. • Dielectric barrier discharge applied solely as ionization source. • Different geometries in order to maintain soft ionization. • Characterization of the LTP probe. • Dielectric barrier discharges with two dielectric barriers (ring-ring shape).

  10. Power supply instrumentation for pulsed dielectric barrier discharges

    International Nuclear Information System (INIS)

    Quiroz Velázquez, V E; López Callejas, R; De la Piedad Beneitez, A; Rodríguez Méndez, B G; Peña Eguiluz, R; Muñoz Castro, A E; Barocio, S R; Mercado Cabrera, A; Valencia Alvarado, R

    2012-01-01

    The design and implementation of a pulsed high voltage supply intended to the production and control of pulsed dielectric barrier discharges are reported. The instrumentation includes three independently built DC sources coupled to Flyback-like converters using three 1:50 high voltage transformers. The system is capable of supplying voltages up to 70 kV at a 100-2000 Hz repetition rate, delivering 1-500 μs wide pulses. The system has been applied to the development of pulsed dielectric barrier discharges in a stainless steel coaxial reactor 30 cm long and with a 2.54 cm diameter. The inner nickel electrode diameter is 0.005 cm and is embedded in alumina. The discharges have been carried out in room pressure air. Discharges have been implemented. The discharge is made is a water environment for purposes of bacterial elimination.

  11. Dielectric materials for electrical engineering

    CERN Document Server

    Martinez-Vega, Juan

    2013-01-01

    Part 1 is particularly concerned with physical properties, electrical ageing and modeling with topics such as the physics of charged dielectric materials, conduction mechanisms, dielectric relaxation, space charge, electric ageing and life end models and dielectric experimental characterization. Part 2 concerns some applications specific to dielectric materials: insulating oils for transformers, electrorheological fluids, electrolytic capacitors, ionic membranes, photovoltaic conversion, dielectric thermal control coatings for geostationary satellites, plastics recycling and piezoelectric poly

  12. Cast dielectric composite linear accelerator

    Science.gov (United States)

    Sanders, David M [Livermore, CA; Sampayan, Stephen [Manteca, CA; Slenes, Kirk [Albuquerque, NM; Stoller, H M [Albuquerque, NM

    2009-11-10

    A linear accelerator having cast dielectric composite layers integrally formed with conductor electrodes in a solventless fabrication process, with the cast dielectric composite preferably having a nanoparticle filler in an organic polymer such as a thermosetting resin. By incorporating this cast dielectric composite the dielectric constant of critical insulating layers of the transmission lines of the accelerator are increased while simultaneously maintaining high dielectric strengths for the accelerator.

  13. A Review of High Voltage Drive Amplifiers for Capacitive Actuators

    DEFF Research Database (Denmark)

    Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.

    2012-01-01

    This paper gives an overview of the high voltage amplifiers, which are used to drive capacitive actuators. The amplifiers for both piezoelectric and DEAP (dielectric electroactive polymer) actuator are discussed. The suitable topologies for driving capacitive actuators are illustrated in detail...

  14. Reliable and Low-Voltage Electrowetting on Thin Parylene Films

    NARCIS (Netherlands)

    Dhindsa, M.S.; Kuiper, S.; Kumar, R.; Heikenfeld, J.

    2011-01-01

    The stability of an electrowetting system is dependent upon the choice of liquids, the dielectric material and the operating voltage.Substantial progress is reported herein on use of 300 nm thick poly-tetrafluoro-para-xylylene) (Parylene HT) films for almost 100° of reliable electrowetting

  15. Optics of dielectric microstructures

    DEFF Research Database (Denmark)

    Søndergaard, Thomas

    2002-01-01

    From the work carried out within the ph.d. project two topics have been selected for this thesis, namely emission of radiation by sources in dielectric microstructures, and planar photonic crystal waveguides. The work done within the first topic, emission of radiation by sources in dielectric...... microstructures, will be presented in the part I of this thesis consisting of the chapters 2-5. An introductions is given in chapter 2. In part I three methods are presented for calculating spontaneous and classical emission from sources in dielectric microstructures. The first method presented in chapter 3...... is based on the Fermi Golden Rule, and spontaneous emission from emitters in a passive dielectric microstructure is calculated by summing over the emission into each electromagnetic mode of the radiation field. This method is applied to investigate spontaneous emission in a two-dimensional photonic crystal...

  16. Electrical model of dielectric barrier discharge homogenous and filamentary modes

    Science.gov (United States)

    López-Fernandez, J. A.; Peña-Eguiluz, R.; López-Callejas, R.; Mercado-Cabrera, A.; Valencia-Alvarado, R.; Muñoz-Castro, A.; Rodríguez-Méndez, B. G.

    2017-01-01

    This work proposes an electrical model that combines homogeneous and filamentary modes of an atmospheric pressure dielectric barrier discharge cell. A voltage controlled electric current source has been utilized to implement the power law equation that represents the homogeneous discharge mode, which starts when the gas breakdown voltage is reached. The filamentary mode implies the emergence of electric current conducting channels (microdischarges), to add this phenomenon an RC circuit commutated by an ideal switch has been proposed. The switch activation occurs at a higher voltage level than the gas breakdown voltage because it is necessary to impose a huge electric field that contributes to the appearance of streamers. The model allows the estimation of several electric parameters inside the reactor that cannot be measured. Also, it is possible to appreciate the modes of the DBD depending on the applied voltage magnitude. Finally, it has been recognized a good agreement between simulation outcomes and experimental results.

  17. Electrical model of dielectric barrier discharge homogenous and filamentary modes

    International Nuclear Information System (INIS)

    López-Fernandez, J A; Peña-Eguiluz, R; López-Callejas, R; Mercado-Cabrera, A; Valencia-Alvarado, R; Muñoz-Castro, A; Rodríguez-Méndez, B G

    2017-01-01

    This work proposes an electrical model that combines homogeneous and filamentary modes of an atmospheric pressure dielectric barrier discharge cell. A voltage controlled electric current source has been utilized to implement the power law equation that represents the homogeneous discharge mode, which starts when the gas breakdown voltage is reached. The filamentary mode implies the emergence of electric current conducting channels (microdischarges), to add this phenomenon an RC circuit commutated by an ideal switch has been proposed. The switch activation occurs at a higher voltage level than the gas breakdown voltage because it is necessary to impose a huge electric field that contributes to the appearance of streamers. The model allows the estimation of several electric parameters inside the reactor that cannot be measured. Also, it is possible to appreciate the modes of the DBD depending on the applied voltage magnitude. Finally, it has been recognized a good agreement between simulation outcomes and experimental results. (paper)

  18. Nonlinear Dielectric Response of Water Treed XLPE Cable Insulation

    Energy Technology Data Exchange (ETDEWEB)

    Hvidsten, Sverre

    1999-07-01

    Condition assessment of XLPE power cables is becoming increasingly important for the utilities, due to a large number of old cables in service with high probability of failure caused by water tree degradation. The commercial available techniques are generally based upon measurements of the dielectric response, either by time (polarisation/depolarisation current or return voltage) or frequency domain measurements. Recently it has been found that a high number of water trees in XLPE insulated cables causes the dielectric response to increase more than linearly with increasing test voltage. This nonlinear feature of water tree degraded XLPE insulation has been suggested to be of a great importance, both for diagnostic purposes, and for fundamental understanding of the water tree phenomenon itself. The main purpose of this thesis have been to study the nonlinear feature of the dielectric response measured on watertreed XLPE insulation. This has been performed by dielectric response measurements in both time and frequency domain, numerical calculations of losses of simplified water tree models, and fmally water content and water permeation measurements on single water trees. The dielectric response measurements were performed on service aged cable samples and laboratory aged Rogowski type objects. The main reason for performing laboratory ageing was to facilitate diagnostic testing as a function of ageing time of samples containing mainly vented water trees. A new method, based upon inserting NaC1 particles at the interface between the upper semiconductive screen and the insulation, was found to successfully enhance initiation and growth of vented water trees. AC breakdown strength testing show that it is the vented water trees that reduce the breakdown level of both the laboratory aged test objects and service aged cable samples. Vented water treeing was found to cause the dielectric response to become nonlinear at a relatively low voltage level. However, the measured

  19. Aspects regarding the Calculation of the Dielectric Loss Angle Tangent between the Windings of a Rated 40 MVA Transformer

    Directory of Open Access Journals (Sweden)

    Cristinel Popescu

    2015-09-01

    Full Text Available The paper aims to identify how to determine the dielectric loss angle tangent of the electric transformers from the transformer stations. Autors of the paper managed a case study on the dielectric established between high respectively medium voltage windings of an electrical rated 40 MVA transformer.

  20. Streamers in water and other dielectric liquids

    International Nuclear Information System (INIS)

    Kolb, J F; Joshi, R P; Xiao, S; Schoenbach, K H

    2008-01-01

    Experimental results on the inception and propagation of streamers in water generated under the application of high electric fields are reviewed. Characteristic parameters, such as breakdown voltage, polarity of the applied voltage, propagation velocities and other phenomenological features, are compared with similar phenomena in other dielectric liquids and in gases. Consequently, parameters that are expected to influence the development of streamers in water are discussed with respect to the analogous well-established models and theories for the related mechanisms in gases. Most of the data support the notion that an initial low-density nucleation site or gas-filled bubble assists the initiation of a streamer. Details of this theory are laid out explaining the observed differences in the breakdown originating from the anode versus the cathode locations. The mechanisms can also be applied to streamer propagation, although some observations cannot be satisfactorily explained.

  1. High voltage systems

    International Nuclear Information System (INIS)

    Martin, M.

    1991-01-01

    Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

  2. Dielectric fluid directional spreading under the action of corona discharge

    Science.gov (United States)

    Zhou, Shangru; Liu, Jie; Hu, Qun; Jiang, Teng; Yang, Jinchu; Liu, Sheng; Zheng, Huai

    2018-01-01

    Liquid spreading is a very common nature phenomenon and of significant importance for a broad range of applications. In this study, a dielectric fluid directional spreading phenomenon is presented. Under the action of corona discharge, a dielectric fluid, here a typical silicone directionally spreads along conductive patterns on conductive/nonconductive substrates. Directional spreading behaviors of silicone were experimentally observed on different conductive patterns in detail. Spreading speeds were analyzed at different driving voltages, which induced the corona discharge. The presented phenomenon may be useful to inspire several techniques of manipulating liquid transportation and fabricating micropatterns.

  3. Dielectric barrier discharge plasma actuator for flow control

    Science.gov (United States)

    Opaits, Dmitry Florievich

    Electrohydrodynamic (EHD) and magnetohydrodynamic phenomena are being widely studied for aerodynamic applications. The major effects of these phenomena are heating of the gas, body force generation, and enthalpy addition or extraction, [1, 2, 3]. In particular, asymmetric dielectric barrier discharge (DBD) plasma actuators are known to be effective EHD device in aerodynamic control, [4, 5]. Experiments have demonstrated their effectiveness in separation control, acoustic noise reduction, and other aeronautic applications. In contrast to conventional DBD actuators driven by sinusoidal voltages, we proposed and used a voltage profile consisting of nanosecond pulses superimposed on dc bias voltage. This produces what is essentially a non-self-sustained discharge: the plasma is generated by repetitive short pulses, and the pushing of the gas occurs primarily due to the bias voltage. The advantage of this non-self-sustained discharge is that the parameters of ionizing pulses and the driving bias voltage can be varied independently, which adds flexibility to control and optimization of the actuators performance. Experimental studies were conducted of a flow induced in a quiescent room air by a single DBD actuator. A new approach for non-intrusive diagnostics of plasma actuator induced flows in quiescent gas was proposed, consisting of three elements coupled together: the Schlieren technique, burst mode of plasma actuator operation, and 2-D numerical fluid modeling. During the experiments, it was found that DBD performance is severely limited by surface charge accumulation on the dielectric. Several ways to mitigate the surface charge were found: using a reversing DC bias potential, three-electrode configuration, slightly conductive dielectrics, and semi conductive coatings. Force balance measurements proved the effectiveness of the suggested configurations and advantages of the new voltage profile (pulses+bias) over the traditional sinusoidal one at relatively low

  4. Electrocardiogram voltage discordance: Interpretation of low QRS voltage only in the precordial leads.

    Science.gov (United States)

    Kim, Diana H; Verdino, Ralph J

    To define clinical correlates of low voltage isolated to precordial leads on the surface electrocardiogram (ECG). Low voltage (V) on the ECG is defined as QRS Vvoltage isolated to the precordial leads with normal limb lead voltages is unclear. Twelve-lead ECGs with QRS V>5mm in one or more limb leads and voltage was found in 256 of 150,000 ECGs (~0.2%). 50.4% of patients had discordant ECGs that correlated with classic etiologies, with a higher incidence of LV dilation in those with classic etiologies than those without. Low precordial voltage is associated with classic etiologies and LV dilation. Copyright © 2017 Elsevier Inc. All rights reserved.

  5. Fuel Cell/Electrochemical Cell Voltage Monitor

    Science.gov (United States)

    Vasquez, Arturo

    2012-01-01

    A concept has been developed for a new fuel cell individual-cell-voltage monitor that can be directly connected to a multi-cell fuel cell stack for direct substack power provisioning. It can also provide voltage isolation for applications in high-voltage fuel cell stacks. The technology consists of basic modules, each with an 8- to 16-cell input electrical measurement connection port. For each basic module, a power input connection would be provided for direct connection to a sub-stack of fuel cells in series within the larger stack. This power connection would allow for module power to be available in the range of 9-15 volts DC. The relatively low voltage differences that the module would encounter from the input electrical measurement connection port, coupled with the fact that the module's operating power is supplied by the same substack voltage input (and so will be at similar voltage), provides for elimination of high-commonmode voltage issues within each module. Within each module, there would be options for analog-to-digital conversion and data transfer schemes. Each module would also include a data-output/communication port. Each of these ports would be required to be either non-electrical (e.g., optically isolated) or electrically isolated. This is necessary to account for the fact that the plurality of modules attached to the stack will normally be at a range of voltages approaching the full range of the fuel cell stack operating voltages. A communications/ data bus could interface with the several basic modules. Options have been identified for command inputs from the spacecraft vehicle controller, and for output-status/data feeds to the vehicle.

  6. Non-contact current and voltage sensor

    Science.gov (United States)

    Carpenter, Gary D; El-Essawy, Wael; Ferreira, Alexandre Peixoto; Keller, Thomas Walter; Rubio, Juan C; Schappert, Michael A

    2014-03-25

    A detachable current and voltage sensor provides an isolated and convenient device to measure current passing through a conductor such as an AC branch circuit wire, as well as providing an indication of an electrostatic potential on the wire, which can be used to indicate the phase of the voltage on the wire, and optionally a magnitude of the voltage. The device includes a housing that contains the current and voltage sensors, which may be a ferrite cylinder with a hall effect sensor disposed in a gap along the circumference to measure current, or alternative a winding provided through the cylinder along its axis and a capacitive plate or wire disposed adjacent to, or within, the ferrite cylinder to provide the indication of the voltage.

  7. Evaluation of Dielectric-Barrier-Discharge Actuator Substrate Materials

    Science.gov (United States)

    Wilkinson, Stephen P.; Siochi, Emilie J.; Sauti, Godfrey; Xu, Tian-Bing; Meador, Mary Ann; Guo, Haiquan

    2014-01-01

    A key, enabling element of a dielectric barrier discharge (DBD) actuator is the dielectric substrate material. While various investigators have studied the performance of different homogeneous materials, most often in the context of related DBD experiments, fundamental studies focused solely on the dielectric materials have received less attention. The purpose of this study was to conduct an experimental assessment of the body-force-generating performance of a wide range of dielectric materials in search of opportunities to improve DBD actuator performance. Materials studied included commonly available plastics and glasses as well as a custom-fabricated polyimide aerogel. Diagnostics included static induced thrust, electrical circuit parameters for 2D surface discharges and 1D volume discharges, and dielectric material properties. Lumped-parameter circuit simulations for the 1D case were conducted showing good correspondence to experimental data provided that stray capacitances are included. The effect of atmospheric humidity on DBD performance was studied showing a large influence on thrust. The main conclusion is that for homogeneous, dielectric materials at forcing voltages less than that required for streamer formation, the material chemical composition appears to have no effect on body force generation when actuator impedance is properly accounted for.

  8. High Voltage Hybrid Electric Propulsion - Multilayered Functional Insulation System (MFIS) NASA-GRC

    Science.gov (United States)

    Lizcano, M.

    2017-01-01

    High power transmission cables pose a key challenge in future Hybrid Electric Propulsion Aircraft. The challenge arises in developing safe transmission lines that can withstand the unique environment found in aircraft while providing megawatts of power. High voltage AC, variable frequency cables do not currently exist and present particular electrical insulation challenges since electrical arcing and high heating are more prevalent at higher voltages and frequencies. Identifying and developing materials that maintain their dielectric properties at high voltage and frequencies is crucial.

  9. Voltage regulator for generator

    Energy Technology Data Exchange (ETDEWEB)

    Naoi, K

    1989-01-17

    It is an object of this invention to provide a voltage regulator for a generator charging a battery, wherein even if the ambient temperature at the voltage regulator rises abnormally high, possible thermal breakage of the semiconductor elements constituting the voltage regulator can be avoided. A feature of this invention is that the semiconductor elements can be protected from thermal breakage, even at an abnormal ambient temperature rise at the voltage regulator for the battery charging generator, by controlling a maximum conduction ratio of a power transistor in the voltage regulator in accordance with the temperature at the voltage regulator. This is achieved through a switching device connected in series to the field coil of the generator and adapted to be controlled in accordance with an output voltage of the generator and the ambient temperature at the voltage regulator. 6 figs.

  10. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  11. Thermally switchable dielectrics

    Science.gov (United States)

    Dirk, Shawn M.; Johnson, Ross S.

    2013-04-30

    Precursor polymers to conjugated polymers, such as poly(phenylene vinylene), poly(poly(thiophene vinylene), poly(aniline vinylene), and poly(pyrrole vinylene), can be used as thermally switchable capacitor dielectrics that fail at a specific temperature due to the non-conjugated precursor polymer irreversibly switching from an insulator to the conjugated polymer, which serves as a bleed resistor. The precursor polymer is a good dielectric until it reaches a specific temperature determined by the stability of the leaving groups. Conjugation of the polymer backbone at high temperature effectively disables the capacitor, providing a `built-in` safety mechanism for electronic devices.

  12. On dielectric breakdown statistics

    International Nuclear Information System (INIS)

    Tuncer, Enis; James, D Randy; Sauers, Isidor; Ellis, Alvin R; Pace, Marshall O

    2006-01-01

    In this paper, we investigate the dielectric breakdown data of some insulating materials and focus on the applicability of the two- and three-parameter Weibull distributions. A new distribution function is also proposed. In order to assess the model distribution's trustworthiness, we employ the Monte Carlo technique and, randomly selecting data-subsets from the whole dielectric breakdown data, determine whether the selected probability functions accurately describe the breakdown data. The utility and strength of the proposed expression are illustrated distinctly by the numerical procedure. The proposed expression is shown to be a valuable alternative to the Weibull ones

  13. Speed of streamers in argon over a flat surface of a dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Sobota, A; Kramer, N J; Van Veldhuizen, E M; Stoffels, W W; Haverlag, M [Eindhoven University of Technology, Department of Applied Physics, PO Box 513, 5600MB Eindhoven (Netherlands); Lebouvier, A [Ecole Polytechnique de l' Universite d' Orleans, 12 rue de Blois, BP 6744, 45067 Orleans Cedex 2 (France); Manders, F [Advanced Development Lighting, Philips Lighting, Mathildelaan 1, 5611 BD, Eindhoven (Netherlands)], E-mail: a.sobota@tue.nl

    2009-01-07

    A pin-pin electrode geometry was used to study the velocities of streamers propagating over a flat dielectric surface and in gas close to the dielectric. The experiments were done in an argon atmosphere, at pressures from 0.1 to 1 bar, with repetitive voltage pulses. The dielectric surface played a noticeable role in discharge ignition and propagation. The average speed of the discharge decreased with higher pressure and lower voltage pulse rise rate. It was higher when the conductive channel between the electrodes was formed over the dielectric, rather than through the gas. Space resolved measurements revealed an increase in velocity of the discharge as it travelled towards the grounded electrode.

  14. Speed of streamers in argon over a flat surface of a dielectric

    International Nuclear Information System (INIS)

    Sobota, A; Kramer, N J; Van Veldhuizen, E M; Stoffels, W W; Haverlag, M; Lebouvier, A; Manders, F

    2009-01-01

    A pin-pin electrode geometry was used to study the velocities of streamers propagating over a flat dielectric surface and in gas close to the dielectric. The experiments were done in an argon atmosphere, at pressures from 0.1 to 1 bar, with repetitive voltage pulses. The dielectric surface played a noticeable role in discharge ignition and propagation. The average speed of the discharge decreased with higher pressure and lower voltage pulse rise rate. It was higher when the conductive channel between the electrodes was formed over the dielectric, rather than through the gas. Space resolved measurements revealed an increase in velocity of the discharge as it travelled towards the grounded electrode.

  15. The LMF triaxial MITL voltage adder system

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Smith, D.L.; Bennett, L.F.; Lockner, T.R.; Olson, R.E.; Poukey, J.W.

    1992-01-01

    The light-ion microfusion driver design consists of multiple accelerating modules fired in coincidence and sequentially in order to provide the desired ion energy, power pulse shape and energy deposition uniformity on an Inertial Confinement Fusion (ICF) target. The basic energy source is a number of Marx generators which, through the appropriate pulse power conditioning, provide the necessary voltage pulse wave form to the accelerating gaps or feeds of each module. The cavity gaps are inductively isolated, and the voltage addition occurs in the center conductor of the voltage adder which is the positive electrode while the electrons of the sheath flow closer to the outer cylinder which is the magnetically insulated cathode electrode. Each module powers a separate two-stage extraction diode which provides a low divergence ion beam. In order to provide the two separate voltage pulses required by the diode, a triaxial adder system is designed for each module. The voltage addition occurs in two separate MITLs. The center hollow cylinder (anode) of the second MITL also serves as the outer cathode electrode for the extension of the first voltage adder MITL. The voltage of the second stage is about twice that of the first stage. The cavities are connected in series to form the outer cylinder of each module. The accelerating modules are positioned radially in a symmetrical way around the fusion chamber. A preliminary conceptual design of the LMF modules with emphasis on the voltage adders and extension MITLs will be presented and discussed

  16. Understanding and Prevention of Transient Voltages and Dielectric Breakdown in High Voltage Battery Systems

    Science.gov (United States)

    2017-07-31

    integrated into unique power system architectures that employ energy generation and storage capable of working together to supply the intermittent ...unidirectional and bidirectional TVS diodes is seen in Figure 3. TVS diodes are known for having fast switch on times but their switch off times are...switch in the circuit, simulating the fast changes in current in the profile of interest. The simulation is run for 50 ms and the initial condition of

  17. Magnetic force induced tristability for dielectric elastomer actuators

    Science.gov (United States)

    Li, Xin-Qiang; Li, Wen-Bo; Zhang, Wen-Ming; Zou, Hong-Xiang; Peng, Zhi-Ke; Meng, Guang

    2017-10-01

    This paper presents a novel dielectric elastomer actuator (DEA) with three stable states. By introducing magnetic forces and coupling them with two cone dielectric elastomer (DE) films, an inherent tristability for the DEA is obtained with a compact design. It is easy to switch between the three stable states by controlling the voltages applied to the DE films. A theoretical model of the system’s potential energy that contains the free energy of the DEs and the potential energy of the applied magnetic field was developed for the tristable mechanism. The experimental results demonstrate that controllable transitions between the three stable states can be achieved with this design by applying over-critical voltages to the various DE films. The maximum dynamic range of the DEA can exceed 53.8% of the total length of the device and the DE’s creep speed was accelerated under the action of the magnetic field.

  18. Electrical characterization of atmospheric pressure dielectric barrier discharge in air

    International Nuclear Information System (INIS)

    Shrestha, P.; Subedi, D.P.; Joshi, U.M.

    2013-01-01

    This paper reports the electrical characterization of dielectric barrier discharge produced at atmospheric pressure using a high voltage power supply operating at 50Hz. The characteristics of the discharge have been studied under different values as such applied voltage and the electrode gap width. The results presented in this work can be helpful in understanding the influence of dielectric material on the nature of the discharge. An attempt has also been made to investigate the influence of ballast resistor on the magnitude of discharge current and also the density of micro-discharges. Our results indicated that with this power supply and electrode geometry, a relatively more homogenous discharge is observed for 3 mm spacing. (author)

  19. Scavenging energy from human motion with tubular dielectric polymer

    Science.gov (United States)

    Jean-Mistral, Claire; Basrour, Skandar

    2010-04-01

    Scavenging energy from human motion is a challenge to supply low consumption systems for sport or medical applications. A promising solution is to use electroactive polymers and especially dielectric polymers to scavenge mechanical energy during walk. In this paper, we present a tubular dielectric generator which is the first step toward an integration of these structures into textiles. For a 10cm length and under a strain of 100%, the structure is able to scavenge 1.5μJ for a poling voltage of 200V and up to 40μJ for a poling voltage of 1000V. A 30cm length structure is finally compared to our previous planar structure, and the power management module for those structures is discussed.

  20. Stress-Dependent Voltage Offsets From Polymer Insulators Used in Rock Mechanics and Material Testing

    Science.gov (United States)

    Carlson, G. G.; Dahlgren, Robert; Gray, Amber; Vanderbilt, V. C.; Freund, F.; Johnston, M. J.; Dunson, C.

    2013-01-01

    Dielectric insulators are used in a variety of laboratory settings when performing experiments in rock mechanics, petrology, and electromagnetic studies of rocks in the fields of geophysics,material science, and civil engineering. These components may be used to electrically isolate geological samples from the experimental equipment, to perform a mechanical compliance function between brittle samples and the loading equipment, to match ultrasonic transducers, or perform other functions. In manyexperimental configurations the insulators bear the full brunt of force applied to the sample but do not need to withstand high voltages, therefore the insulators are often thin sheets of mechanically tough polymers. From an instrument perspective, transduction from various types of mechanical perturbation has beenqualitatively compared for a number of polymers [1, 2] and these error sources are readily apparent duringhigh-impedance measurements if not mitigated. However even when following best practices, a force dependent voltage signal still remains and its behavior is explored in this presentation. In this experimenttwo thin sheets (0.25 mm) of high-density polyethylene (HDPE) were set up in a stack, held alternatelybetween three aluminum bars; this stack was placed on the platen of a 60T capacity hydraulic testingmachine. The surface area, A, over which the force is applied to the PE sheets in this sandwich is roughly 40 square cm, each sheet forming a parallel-plate capacitor having roughly 320 pF [3], assuming therelative dielectric permittivity of PE is approximately 2.3. The outer two aluminum bars were connected to the LO input ofthe electrometer and the central aluminum bar was connected to the HI input of a Keithley model 617 electrometer. Once the stack is mechanically well-seated with no air gaps, the voltage offset is observed tobe a linear function of the baseline voltage for a given change in applied force. For a periodically appliedforce of 66.7 kN the

  1. Energy scavenging strain absorber: application to kinetic dielectric elastomer generator

    Science.gov (United States)

    Jean-Mistral, C.; Beaune, M.; Vu-Cong, T.; Sylvestre, A.

    2014-03-01

    Dielectric elastomer generators (DEGs) are light, compliant, silent energy scavengers. They can easily be incorporated into clothing where they could scavenge energy from the human kinetic movements for biomedical applications. Nevertheless, scavengers based on dielectric elastomers are soft electrostatic generators requiring a high voltage source to polarize them and high external strain, which constitutes the two major disadvantages of these transducers. We propose here a complete structure made up of a strain absorber, a DEG and a simple electronic power circuit. This new structure looks like a patch, can be attached on human's wear and located on the chest, knee, elbow… Our original strain absorber, inspired from a sailing boat winch, is able to heighten the external available strain with a minimal factor of 2. The DEG is made of silicone Danfoss Polypower and it has a total area of 6cm per 2.5cm sustaining a maximal strain of 50% at 1Hz. A complete electromechanical analytical model was developed for the DEG associated to this strain absorber. With a poling voltage of 800V, a scavenged energy of 0.57mJ per cycle is achieved with our complete structure. The performance of the DEG can further be improved by enhancing the imposed strain, by designing a stack structure, by using a dielectric elastomer with high dielectric permittivity.

  2. Dielectric strength test to protection elements for live lines works

    Directory of Open Access Journals (Sweden)

    Carlos Eduardo Pinto-Salamanca

    2017-06-01

    Full Text Available This paper presents the design and assembly of a system of tests of sustained voltage to elements and equipment used in live line maneuvers through tests on gloves and dielectric rods, as these are the first points of contact to ensure safe operations. It means an advance for the creation of a laboratory certified in this type of tests at Universidad Pedagógica y Tecnológica de Colombia (UPTC Faculty of Duitama, considering that currently there are not laboratories that provide this service in Boyacá and Casanare. Dielectric strength tests were performed on personal protection elements and equipment under the parameters of ASTM D120, ASTM F496, ISO 60903, ASTM-F711 and IEEE 978, developing an assembly for testing gloves and dielectric rods with voltage levels up to 15 kV. The results validate the proposed system to outlook of circuit design and implementation, where tests were performed to establish dielectric capacities, in operating under open circuit conditions, with resistive load or short circuit. The compliance with the regulations established under the test sequences of safety parameters for the system and the follow-up to the tests was verified through the use of a management system for the generation of concepts of approval or rejection of the tested elements.

  3. Effect of gate dielectrics on the performance of p-type Cu2O TFTs processed at room temperature

    KAUST Repository

    Al-Jawhari, Hala A.; Caraveo-Frescas, Jesus Alfonso

    2013-01-01

    /off ratio of around 44, threshold voltage equaling -0.62 V and a sub threshold swing of 1.64 V/dec. These values were obtained at a low operating voltage of -2V. The advantages of using STO as a gate dielectric relative to ATO are discussed. © (2014) Trans

  4. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    Science.gov (United States)

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  5. Soft Functional Silicone Elastomers with High Dielectric Permittivty: Simple Additives vs. Cross-Linked Synthesized Copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Skov, Anne Ladegaard

    Though dielectric elastomers (DEs) have many favorable properties, the issue of high driving voltages limits the commercial viability of the technology. Improved actuation at lower voltages can be obtained by decreasing the Young’s modulus and/or decreasing the dielectric permittivity of the elas......Though dielectric elastomers (DEs) have many favorable properties, the issue of high driving voltages limits the commercial viability of the technology. Improved actuation at lower voltages can be obtained by decreasing the Young’s modulus and/or decreasing the dielectric permittivity...... of the elastomer. A decrease in Young’s modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE whereas addition of high permittivity fillers such as metal oxides often increases Young’s modulus such that improved actuation is not accomplished. New soft...... silicone elastomers with high dielectric permittivity were prepared through the use of chloropropyl-functional silicones. One method was through the synthesis of modular cross-linkable chloropropyl-functional copolymers that allow for a high degree of chemical freedom such that a tuneable silicone...

  6. Experimental and modelling investigations of a dielectric barrier discharge in low-pressure argon

    International Nuclear Information System (INIS)

    Wagenaars, E; Brandenburg, R; Brok, W J M; Bowden, M D; Wagner, H-E

    2006-01-01

    The discharge behaviour of a dielectric barrier discharge (DBD) in low-pressure argon gas was investigated by experiments and modelling. The electrical characteristics and light emission dynamics of the discharge were measured and compared with the results of a two-dimensional fluid model. Our investigations showed that the discharge consisted of a single, diffuse discharge per voltage half-cycle. The breakdown phase of the low-pressure DBD (LPDBD) was investigated to be similar to the ignition phase of a low-pressure glow discharge without dielectrics, described by Townsend breakdown theory. The stable discharge phase of the LPDBD also showed a plasma structure with features similar to those of a classical glow discharge. The presence of the dielectric in the discharge gap led to the discharge quenching and thus the decay of the plasma. Additionally, the argon metastable density was monitored by measuring light emission from nitrogen impurities. A metastable density of about 5 x 10 17 m -3 was present during the entire voltage cycle, with only a small (∼10%) increase during the discharge. Finally, a reduction of the applied voltage to the minimum required to sustain the discharge led to a further reduction of the role of the dielectric. The discharge was no longer quenched by the dielectrics only but also by a reduction of the applied voltage

  7. Effect of porosity on dielectric properties and microstructure of porous PZT ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, B. Praveen [PZT Centre, Armament Research and Development Establishment, Pune 411021 (India); Kumar, H.H. [PZT Centre, Armament Research and Development Establishment, Pune 411021 (India); Kharat, D.K. [PZT Centre, Armament Research and Development Establishment, Pune 411021 (India)]. E-mail: dkkharat@rediffmail.com

    2006-02-25

    Porous piezoelectric materials are of great interest because of their high hydrostatic figure of merit and low sound velocity, which results in to low acoustic impedance and efficient coupling with medium. Porous lead zirconate titanate (PZT) ceramics with varying porosity was developed using polymethyl methacrylate by burnable plastic spheres (BURPS) process. The porous PZT ceramics were characterized for dielectric constant ({epsilon}), dielectric loss factor (tan {delta}), hydrostatic charge (d {sub h}) and voltage (g {sub h}) coefficients and microstructure. The effect of the porous microstructure on the dielectric constant and loss factor at frequencies of 10-10{sup 5} Hz are discussed in this paper.

  8. Technological Aspects: High Voltage

    International Nuclear Information System (INIS)

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered. (author)

  9. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D.C.

    2013-12-16

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  10. Stray voltage mitigation

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

    2008-04-09

    This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

  11. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  12. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  13. Transformation Algorithm of Dielectric Response in Time-Frequency Domain

    Directory of Open Access Journals (Sweden)

    Ji Liu

    2014-01-01

    Full Text Available A transformation algorithm of dielectric response from time domain to frequency domain is presented. In order to shorten measuring time of low or ultralow frequency dielectric response characteristics, the transformation algorithm is used in this paper to transform the time domain relaxation current to frequency domain current for calculating the low frequency dielectric dissipation factor. In addition, it is shown from comparing the calculation results with actual test data that there is a coincidence for both results over a wide range of low frequencies. Meanwhile, the time domain test data of depolarization currents in dry and moist pressboards are converted into frequency domain results on the basis of the transformation. The frequency domain curves of complex capacitance and dielectric dissipation factor at the low frequency range are obtained. Test results of polarization and depolarization current (PDC in pressboards are also given at the different voltage and polarization time. It is demonstrated from the experimental results that polarization and depolarization current are affected significantly by moisture contents of the test pressboards, and the transformation algorithm is effective in ultralow frequency of 10−3 Hz. Data analysis and interpretation of the test results conclude that analysis of time-frequency domain dielectric response can be used for assessing insulation system in power transformer.

  14. Dielectric nanoresonators for light manipulation

    Science.gov (United States)

    Yang, Zhong-Jian; Jiang, Ruibin; Zhuo, Xiaolu; Xie, Ya-Ming; Wang, Jianfang; Lin, Hai-Qing

    2017-07-01

    Nanostructures made of dielectric materials with high or moderate refractive indexes can support strong electric and magnetic resonances in the optical region. They can therefore function as nanoresonators. In addition to plasmonic metal nanostructures that have been widely investigated, dielectric nanoresonators provide a new type of building blocks for realizing powerful and versatile nanoscale light manipulation. In contrast to plasmonic metal nanostructures, nanoresonators made of appropriate dielectric materials are low-cost, earth-abundant and have very small or even negligible light energy losses. As a result, they will find potential applications in a number of photonic devices, especially those that require low energy losses. In this review, we describe the recent progress on the experimental and theoretical studies of dielectric nanoresonators. We start from the basic theory of the electromagnetic responses of dielectric nanoresonators and their fabrication methods. The optical properties of individual dielectric nanoresonators are then elaborated, followed by the coupling behaviors between dielectric nanoresonators, between dielectric nanoresonators and substrates, and between dielectric nanoresonators and plasmonic metal nanostructures. The applications of dielectric nanoresonators are further described. Finally, the challenges and opportunities in this field are discussed.

  15. Center for dielectric studies

    Science.gov (United States)

    Cross, L. E.; Newnham, R. E.; Biggers, J. V.

    1984-05-01

    This report focuses upon the parts of the Center program which have drawn most extensively upon Navy funds. In the basic study of polarization processes in high K dielectrics, major progress has been made in understanding the mechanisms in relaxor ferroelectric in the perovskite structure families. A new effort is also being mounted to obtain more precise evaluation of the internal stress effects in fine grained barium titanate. Related to reliability, studies of the effects of induced macro-defects are described, and preparation for the evaluation of space charge by internal potential distribution measurements discussed. To develop new processing methods for very thin dielectric layers, a new type of single barrier layer multilayer is discussed, and work on the thermal evaporation of oriented crystalline antimony sulphur iodide describe.

  16. Stress measurements of planar dielectric elastomer actuators

    International Nuclear Information System (INIS)

    Osmani, Bekim; Aeby, Elise A.; Müller, Bert

    2016-01-01

    Dielectric elastomer actuator (DEA) micro- and nano-structures are referred to artificial muscles because of their specific continuous power and adequate time response. The bending measurement of an asymmetric, planar DEA is described. The asymmetric cantilevers consist of 1 or 5 μm-thin DEAs deposited on polyethylene naphthalate (PEN) substrates 16, 25, 38, or 50 μm thick. The application of a voltage to the DEA electrodes generates an electrostatic pressure in the sandwiched silicone elastomer layer, which causes the underlying PEN substrate to bend. Optical beam deflection enables the detection of the bending angle vs. applied voltage. Bending radii as large as 850 m were reproducibly detected. DEA tests with electric fields of up to 80 V/μm showed limitations in electrode’s conductivity and structure failures. The actuation measurement is essential for the quantitative characterization of nanometer-thin, low-voltage, single- and multi-layer DEAs, as foreseen for artificial sphincters to efficiently treat severe urinary and fecal incontinence.

  17. Stress measurements of planar dielectric elastomer actuators

    Energy Technology Data Exchange (ETDEWEB)

    Osmani, Bekim; Aeby, Elise A.; Müller, Bert [Biomaterials Science Center, University of Basel, Gewerbestrasse 14, 4123 Allschwil (Switzerland)

    2016-05-15

    Dielectric elastomer actuator (DEA) micro- and nano-structures are referred to artificial muscles because of their specific continuous power and adequate time response. The bending measurement of an asymmetric, planar DEA is described. The asymmetric cantilevers consist of 1 or 5 μm-thin DEAs deposited on polyethylene naphthalate (PEN) substrates 16, 25, 38, or 50 μm thick. The application of a voltage to the DEA electrodes generates an electrostatic pressure in the sandwiched silicone elastomer layer, which causes the underlying PEN substrate to bend. Optical beam deflection enables the detection of the bending angle vs. applied voltage. Bending radii as large as 850 m were reproducibly detected. DEA tests with electric fields of up to 80 V/μm showed limitations in electrode’s conductivity and structure failures. The actuation measurement is essential for the quantitative characterization of nanometer-thin, low-voltage, single- and multi-layer DEAs, as foreseen for artificial sphincters to efficiently treat severe urinary and fecal incontinence.

  18. The transfer voltage standard for calibration outside of a laboratory

    Directory of Open Access Journals (Sweden)

    Urekar Marjan

    2017-01-01

    Full Text Available The transfer voltage standard is designed for transferring the analog voltage from a calibrator to the process control workstation for multi-electrode electrolysis process in a plating plant. Transfer voltage standard is based on polypropylene capacitors and operational amplifiers with tera-ohm range input resistance needed for capacitor self-discharging effect cancellation. Dielectric absorption effect is described. An instrument for comparison of reference and control voltages is devised, based on precise window comparator. Detailed description of the main task is given, including constraints, theoretical and practical solutions. Procedure for usage of the standard outside of a laboratory conditions is explained. Comparison of expected and realized standard characteristics is given. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. TR-32019

  19. Improvement in photoconductor film properties by changing dielectric layer structures

    International Nuclear Information System (INIS)

    Kim, S; Oh, K; Lee, Y; Jung, J; Cho, G; Jang, G; Cha, B; Nam, S; Park, J

    2011-01-01

    In recent times, digital X-ray detectors have been actively applied to the medical field; for example, digital radiography offers the potential of improved image quality and provides opportunities for advances in medical image management, computer-aided diagnosis and teleradiology. In this study, two candidate materials (HgI 2 and PbI 2 ) have been employed to study the influence of the dielectric structure on the performance of fabricated X-ray photoconducting films. Parylene C with high permittivity was deposited as a dielectric layer using a parylene deposition system (PDS 2060). The structural and morphological properties of the samples were evaluated field emission scanning electron microscopy and X-ray diffraction. Further, to investigate improvements in the electrical characteristics, a dark current in the dark room and sensitivity to X-ray exposure in the energy range of general radiography diagnosis were measured across the range of the operating voltage. The electric signals varied with the dielectric layer structure of the X-ray films. The PbI 2 film with a bottom dielectric layer showed optimized electric properties. On the other hand, in the case of HgI 2 , the film with a top dielectric layer showed superior electric characteristics. Further, although the sensitivity of the film decreased, the total electrical efficiency of the film improved as a result of the decrease in dark current. When a dielectric layer is deposited on a photoconductor, the properties of the photoconductor, such as hole-electron mobility, should be considered to improve the image quality in digital medical imaging application. In this study, we have thus demonstrated that the use of dielectric layer structures improves the performance of photoconductors.

  20. Dielectric properties of polyethylene

    International Nuclear Information System (INIS)

    Darwish, S.; Riad, A.S.; El-Shabasy, M.

    2005-01-01

    The temperature dependence of dielectric properties in polyethylene was measured in the frequency range from 10 to 105 Hz. The frequency dependence of the complex impedance in the complex plane could be fitted by semicircles. The system could be represented by an equivalent circuit of a bulk resistance in series with parallel surface resistance-capacitance combination. The relaxation time, has been evaluated from experimental results. Results reveal that the temperature dependence, is a thermally activated process

  1. Dielectric Wakefield Researches

    International Nuclear Information System (INIS)

    Kiselev, V.A.; Linnik, A.F.; Onishchenko, N.I.; Uskov, V.V.; Marshall, T.C.

    2006-01-01

    Excitation of wakefield in cylindrical dielectric waveguide/resonator by a sequence of relativistic electron bunches was investigated using an electron linac 'Almaz-2' (4.5 MeV, 6·10 3 bunches of duration 60 ps and charge 0.32 nC each). Energy spectrum of electrons, radial topography and longitudinal distribution of wakefield, and total energy of excited wakefield were measured by means of magnetic analyzer, high frequency probe, and a sensitive calorimeter

  2. Dielectric lattice gauge theory

    International Nuclear Information System (INIS)

    Mack, G.

    1983-06-01

    Dielectric lattice gauge theory models are introduced. They involve variables PHI(b)epsilong that are attached to the links b = (x+esub(μ),x) of the lattice and take their values in the linear space g which consists of real linear combinations of matrices in the gauge group G. The polar decomposition PHI(b)=U(b)osub(μ)(x) specifies an ordinary lattice gauge field U(b) and a kind of dielectric field epsilonsub(ij)proportionalosub(i)osub(j)sup(*)deltasub(ij). A gauge invariant positive semidefinite kinetic term for the PHI-field is found, and it is shown how to incorporate Wilson fermions in a way which preserves Osterwalder Schrader positivity. Theories with G = SU(2) and without matter fields are studied in some detail. It is proved that confinement holds, in the sense that Wilson loop expectation values show an area law decay, if the Euclidean action has certain qualitative features which imply that PHI = 0 (i.e. dielectric field identical 0) is the unique maximum of the action. (orig.)

  3. Dielectric lattice gauge theory

    International Nuclear Information System (INIS)

    Mack, G.

    1984-01-01

    Dielectric lattice gauge theory models are introduced. They involve variables PHI(b)element ofG that are attached to the links b = (x+esub(μ), x) of the lattice and take their values in the linear space G which consists of real linear combinations of matrices in the gauge group G. The polar decomposition PHI(b)=U(b)sigmasub(μ)(x) specifies an ordinary lattice gauge field U(b) and a kind of dielectric field epsilonsub(ij)proportional sigmasub(i)sigmasub(j)sup(*)deltasub(ij). A gauge invariant positive semidefinite kinetic term for the PHI-field is found, and it is shown how to incorporate Wilson fermions in a way which preserves Osterwalder-Schrader positivity. Theories with G = SU(2) and without matter fields are studied in some detail. It is proved that confinement holds, in the sense that Wilson-loop expectation values show an area law decay, if the euclidean action has certain qualitative features which imply that PHI=0 (i.e. dielectric field identical 0) is the unique maximum of the action. (orig.)

  4. Uv laser triggering of high-voltage gas switches

    International Nuclear Information System (INIS)

    Woodworth, J.R.; Frost, C.A.; Green, T.A.

    1982-01-01

    Two different techniques are discussed for uv laser triggering of high-voltage gas switches using a KrF laser (248 nm) to create an ionized channel through the dielectric gas in a spark gap. One technique uses an uv laser to induce breakdown in SF 6 . For this technique, we present data that demonstrate a 1-sigma jitter of +- 150 ps for a 0.5-MV switch at 80% of its self-breakdown voltage using a low-divergence KrF laser. The other scheme uses additives to the normal dielectric gas, such as tripropylamine, which are selected to undergo resonant two-step ionization in the uv laser field

  5. One-carrier free space charge motion under applied voltage

    Energy Technology Data Exchange (ETDEWEB)

    de ALMEIDA, L E.C.; FERREIRA, G F.L. [SAO PAULO UNIV., SAO CARLOS (BRAZIL). INSTITUTO DE FISICA E QUIMICA

    1975-12-01

    It is shown how to transform the system of partial differential equations, describing the free one-carrier space charge motion in solid dielectrics under a given applied voltage and while the charge distribution touches only one of the electrodes, into a first order ordinary differential equation from whose solution all the interesting quantities may be easily derived. It was found that some charge distributions can display current reversal.

  6. Dielectric properties of lunar surface

    Science.gov (United States)

    Yushkova, O. V.; Kibardina, I. N.

    2017-03-01

    Measurements of the dielectric characteristics of lunar soil samples are analyzed in the context of dielectric theory. It has been shown that the real component of the dielectric permittivity and the loss tangent of rocks greatly depend on the frequency of the interacting electromagnetic field and the soil temperature. It follows from the analysis that one should take into account diurnal variations in the lunar surface temperature when interpreting the radar-sounding results, especially for the gigahertz radio range.

  7. Characterization, Microstructure, and Dielectric properties of cubic pyrochlore structural ceramics

    KAUST Repository

    Li, Yangyang

    2013-05-01

    The (BMN) bulk materials were sintered at 1050°C, 1100°C, 1150°C, 1200°C by the conventional ceramic process, and their microstructure and dielectric properties were investigated by Scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, Transmission electron microscopy (TEM) (including the X-ray energy dispersive spectrometry EDS and high resolution transmission electron microscopy HRTEM) and dielectric impedance analyzer. We systematically investigated the structure, dielectric properties and voltage tunable property of the ceramics prepared at different sintering temperatures. The XRD patterns demonstrated that the synthesized BMN solid solutions had cubic phase pyrochlore-type structure when sintered at 1050°C or higher, and the lattice parameter (a) of the unit cell in BMN solid solution was calculated to be about 10.56Å. The vibrational peaks observed in the Raman spectra of BMN solid solutions also confirmed the cubic phase pyrochlore-type structure of the synthesized BMN. According to the Scanning Electron Microscope (SEM) images, the grain size increased with increasing sintering temperature. Additionally, it was shown that the densities of the BMN ceramic tablets vary with sintering temperature. The calculated theoretical density for the BMN ceramic tablets sintered at different temperatures is about 6.7521 . The density of the respective measured tablets is usually amounting more than 91% and 5 approaching a maximum value of 96.5% for sintering temperature of 1150°C. The microstructure was investigated by using Scanning Transmission Electron Microscope (STEM), X-ray diffraction (XRD). Combined with the results obtained from the STEM and XRD, the impact of sintering temperature on the macroscopic and microscopic structure was discussed. The relative dielectric constant ( ) and dielectric loss ( ) of the BMN solid solutions were measured to be 161-200 and (at room temperature and 100Hz-1MHz), respectively. The BMN solid

  8. Study on chitosan film properties as a green dielectric

    Science.gov (United States)

    Nainggolan, I.; Nasution, T. I.; Putri, S. R. E.; Azdena, D.; Balyan, M.; Agusnar, H.

    2018-02-01

    Chitosan film dielectrics to produce an electrostatic capacitor were prepared by the solution cast technique. The charging and discharging of the capacitor were done using RC series circuit with DC voltage supply because chitosan has bipolar properties. First testing was by varying supply voltage of 1, 3, 5, 10 and 15 V, respectively, and could be determined that the most effective voltage for chitosan film can be well polarised is 5 V. The results of second testing for the use of 5 V supply showed that the capacitance of a chitosan film capacitor decreased with the increase in load value. For loads of 100, 1K, 10K, 100K and 1M Ω, the capacitance values of the chitosan film capacitor were 3.1725, 0.4136, 0.05379, 0.007917 and 0.001522 F, respectively. It was also found that the increase in voltage of the capacitor at charging process was faster for the lower load. Therefore, the research result has corresponded to the general formula that used to calculate the capacitance value and thus, the biopolymer chitosan has potential as a sustainable green dielectric.

  9. Experimental and modeling study of the capacitance-voltage characteristics of metal-insulator-semiconductor capacitor based on pentacene/parylene

    KAUST Repository

    Wondmagegn, Wudyalew T.; Satyala, Nikhil T.; Mejia, Israel I.; Mao, Duo; Gowrisanker, Srinivas; Alshareef, Husam N.; Stiegler, Harvey J.; Quevedo-Ló pez, Manuel Angel Quevedo; Pieper, Ron J.; Gnade, Bruce E.

    2011-01-01

    The capacitance-voltage (C-V) characteristics of metal-insulator- semiconductor (MIS) capacitors consisting of pentacene as an organic semiconductor and parylene as the dielectric have been investigated by experimental, analytical, and numerical

  10. Electrostatic accelerator dielectrics

    International Nuclear Information System (INIS)

    Cooke, C.M.

    1989-05-01

    High voltage insulation problems in electrostatic accelerators are discussed. The aim of the analysis is to broaden the knowledge, highlight the characteristics of insulation technology and design strategies to improve use. The basic geometry of the insulation in accelerators is considered. A detailed description of each of the insulation regions is provided. The gas gap insulation of the terminal voltage is found to be sensitive to regions of high electric stress. In order to obtain satisfactory performance from solid support insulation, the attention is focused on the electric stress value and distribution. Potential subjects for discussion and further investigations are given

  11. Soft Dielectric Elastomer Oscillators Driving Bioinspired Robots.

    Science.gov (United States)

    Henke, E-F Markus; Schlatter, Samuel; Anderson, Iain A

    2017-12-01

    Entirely soft robots with animal-like behavior and integrated artificial nervous systems will open up totally new perspectives and applications. To produce them, we must integrate control and actuation in the same soft structure. Soft actuators (e.g., pneumatic and hydraulic) exist but electronics are hard and stiff and remotely located. We present novel soft, electronics-free dielectric elastomer oscillators, which are able to drive bioinspired robots. As a demonstrator, we present a robot that mimics the crawling motion of the caterpillar, with an integrated artificial nervous system, soft actuators and without any conventional stiff electronic parts. Supplied with an external DC voltage, the robot autonomously generates all signals that are necessary to drive its dielectric elastomer actuators, and it translates an in-plane electromechanical oscillation into a crawling locomotion movement. Therefore, all functional and supporting parts are made of polymer materials and carbon. Besides the basic design of this first electronic-free, biomimetic robot, we present prospects to control the general behavior of such robots. The absence of conventional stiff electronics and the exclusive use of polymeric materials will provide a large step toward real animal-like robots, compliant human machine interfaces, and a new class of distributed, neuron-like internal control for robotic systems.

  12. Phenomena of nonlinear oscillation and special resonance of a dielectric elastomer minimum energy structure rotary joint

    Science.gov (United States)

    Zhao, Jianwen; Niu, Junyang; McCoul, David; Ren, Zhi; Pei, Qibing

    2015-03-01

    The dielectric elastomer minimum energy structure can realize large angular deformations by a small voltage-induced strain of the dielectric elastomer, so it is a suitable candidate to make a rotary joint for a soft robot. Driven with an alternating electric field, the joint deformation vibrational frequency follows the input voltage frequency. However, the authors find that if the rotational inertia increases such that the inertial torque makes the frame deform over a negative angle, then the joint motion will become complicated and the vibrational mode will alter with the change of voltage frequency. The vibration with the largest amplitude does not occur while the voltage frequency is equal to natural response frequency of the joint. Rather, the vibrational amplitude will be quite large over a range of other frequencies at which the vibrational frequency is half of the voltage frequency. This phenomenon was analyzed by a comparison of the timing sequences between voltage and joint vibration. This vibrational mode with the largest amplitude can be applied to the generation lift in a flapping wing actuated by dielectric elastomers.

  13. The possibility of giant dielectric materials for multilayer ceramic capacitors.

    Science.gov (United States)

    Ishii, Tatsuya; Endo, Makoto; Masuda, Kenichiro; Ishida, Keisuke

    2013-02-11

    There have been numerous reports on discovery of giant dielectric permittivity materials called internal barrier layer capacitor in the recent years. We took particular note of one of such materials, i.e., BaTiO 3 with SiO 2 coating. It shows expressions of giant electric permittivity when processed by spark plasma sintering. So we evaluated various electrical characteristics of this material to find out whether it is applicable to multilayer ceramic capacitors. Our evaluation revealed that the isolated surface structure is the sole cause of expressions of giant dielectric permittivity.

  14. Dielectric Properties Of Nanoferrites

    International Nuclear Information System (INIS)

    Jankov, Stevan B.; Cvejic, Zeljka N.; Rakic, Srdjan; Srdic, Vladimir

    2007-01-01

    Dielectric properties: permittivity, loss factor, tan delta and ionic conductivity of nanostructured ferrites have been measured. Samples used were nickel, zinc and yttrium doped ferrites mixed in various ratios. The synthesis has been performed using precipitation method and obtained powders were pressed in pellets under varying pressure. X-ray diffractography approach for the refinement of structure and microstructural analysis has been performed. All parameters have been measured in 1 Hz to 100 kHz frequency range and 30 deg. C to 80 deg. C temperature range. Significant improvements in permittivity, loss factor and ionic conductivity comparing to bulk samples have been observed

  15. Dielectric materials and electrostatics

    CERN Document Server

    Gallot-Lavalle, Olivier

    2013-01-01

    An introduction to the physics of electrical insulation, this book presents the physical foundations of this discipline and the resulting applications. It is structured in two parts. The first part presents a mathematical and intuitive approach to dielectrics; various concepts, including polarization, induction, forces and losses are discussed. The second part provides readers with the keys to understanding the physics of solid, liquid and gas insulation. It comprises a phenomenological description of discharges in gas and its resulting applications. Finally, the main electrical properties

  16. A dielectric relaxation approach

    Indian Academy of Sciences (India)

    The complex permittivity spectra were studied using the time domain reflectometry [6,7] method. The Hewlett Packard HP 54750 sampling oscilloscope with HP 54754A TDR plug in module has been used. A fast rising step voltage pulse of about 40 ps rise time was propagated through a coaxial line system. Transmission ...

  17. Experimental validation of prototype high voltage bushing

    Science.gov (United States)

    Shah, Sejal; Tyagi, H.; Sharma, D.; Parmar, D.; M. N., Vishnudev; Joshi, K.; Patel, K.; Yadav, A.; Patel, R.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A.

    2017-08-01

    Prototype High voltage bushing (PHVB) is a scaled down configuration of DNB High Voltage Bushing (HVB) of ITER. It is designed for operation at 50 kV DC to ensure operational performance and thereby confirming the design configuration of DNB HVB. Two concentric insulators viz. Ceramic and Fiber reinforced polymer (FRP) rings are used as double layered vacuum boundary for 50 kV isolation between grounded and high voltage flanges. Stress shields are designed for smooth electric field distribution. During ceramic to Kovar brazing, spilling cannot be controlled which may lead to high localized electrostatic stress. To understand spilling phenomenon and precise stress calculation, quantitative analysis was performed using Scanning Electron Microscopy (SEM) of brazed sample and similar configuration modeled while performing the Finite Element (FE) analysis. FE analysis of PHVB is performed to find out electrical stresses on different areas of PHVB and are maintained similar to DNB HV Bushing. With this configuration, the experiment is performed considering ITER like vacuum and electrical parameters. Initial HV test is performed by temporary vacuum sealing arrangements using gaskets/O-rings at both ends in order to achieve desired vacuum and keep the system maintainable. During validation test, 50 kV voltage withstand is performed for one hour. Voltage withstand test for 60 kV DC (20% higher rated voltage) have also been performed without any breakdown. Successful operation of PHVB confirms the design of DNB HV Bushing. In this paper, configuration of PHVB with experimental validation data is presented.

  18. Parameters design of the dielectric elastomer spring-roll bending actuator (Conference Presentation)

    Science.gov (United States)

    Li, Jinrong; Liu, Liwu; Liu, Yanju; Leng, Jinsong

    2017-04-01

    Dielectric elastomers are novel soft smart material that could deform sustainably when subjected to external electric field. That makes dielectric elastomers promising materials for actuators. In this paper, a spring-roll actuator that would bend when a high voltage is applied was fabricated based on dielectric elastomer. Using such actuators as active parts, the flexible grippers and inchworm-inspired crawling robots were manufactured, which demonstrated some examples of applications in soft robotics. To guide the parameters design of dielectric elastomer based spring-roll bending actuators, the theoretical model of such actuators was established based on thermodynamic theories. The initial deformation and electrical induced bending angle of actuators were formulated. The failure of actuators was also analyzed considering some typical failure modes like electromechanical instability, electrical breakdown, loss of tension and maximum tolerant stretch. Thus the allowable region of actuators was determined. Then the bending angle-voltage relations and failure voltages of actuators with different parameters, including stretches of the dielectric elastomer film, number of active layers, and dimensions of spring, were investigated. The influences of each parameter on the actuator performances were discussed, providing meaningful guidance to the optical design of the spring-roll bending actuators.

  19. Depolarization current relaxation process of insulating dielectrics after corona poling under different charging conditions

    Directory of Open Access Journals (Sweden)

    J. W. Zhang

    2017-10-01

    Full Text Available As an insulating dielectric, polyimide is favorable for the application of optoelectronics, electrical insulation system in electric power industry, insulating, and packaging materials in space aircraft, due to its excellent thermal, mechanical and electrical insulating stability. The charge storage profile of such insulating dielectric is utmost important to its application, when it is exposed to electron irradiation, high voltage corona discharge or other treatments. These treatments could induce changes in physical and chemical properties of treated samples. To investigate the charge storage mechanism of the insulating dielectrics after high-voltage corona discharge, the relaxation processes responsible for corona charged polyimide films under different poling conditions were analyzed by the Thermally Stimulated Discharge Currents method (TSDC. In the results of thermal relaxation process, the appearance of various peaks in TSDC spectra provided a deep insight into the molecular status in the dielectric material and reflected stored space charge relaxation process in the insulating polymers after corona discharge treatments. Furthermore, the different space charge distribution status under various poling temperature and different discharge voltage level were also investigated, which could partly reflect the influence of the ambiance condition on the functional dielectrics after corona poling.

  20. Depolarization current relaxation process of insulating dielectrics after corona poling under different charging conditions

    Science.gov (United States)

    Zhang, J. W.; Zhou, T. C.; Wang, J. X.; Yang, X. F.; Zhu, F.; Tian, L. M.; Liu, R. T.

    2017-10-01

    As an insulating dielectric, polyimide is favorable for the application of optoelectronics, electrical insulation system in electric power industry, insulating, and packaging materials in space aircraft, due to its excellent thermal, mechanical and electrical insulating stability. The charge storage profile of such insulating dielectric is utmost important to its application, when it is exposed to electron irradiation, high voltage corona discharge or other treatments. These treatments could induce changes in physical and chemical properties of treated samples. To investigate the charge storage mechanism of the insulating dielectrics after high-voltage corona discharge, the relaxation processes responsible for corona charged polyimide films under different poling conditions were analyzed by the Thermally Stimulated Discharge Currents method (TSDC). In the results of thermal relaxation process, the appearance of various peaks in TSDC spectra provided a deep insight into the molecular status in the dielectric material and reflected stored space charge relaxation process in the insulating polymers after corona discharge treatments. Furthermore, the different space charge distribution status under various poling temperature and different discharge voltage level were also investigated, which could partly reflect the influence of the ambiance condition on the functional dielectrics after corona poling.

  1. Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shun; Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn; Zhong, Ya-Nan; Zhang, Zhong-Da; Xu, Jian-Long; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu 215123 (China)

    2016-07-11

    High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

  2. Discharge ignition near a dielectric

    NARCIS (Netherlands)

    Sobota, A.; Veldhuizen, van E.M.; Stoffels, W.W.

    2008-01-01

    Electrical breakdown in noble gas near a dielectric is an important issue in lighting industry. In order to investigate the influence of the dielectric on the ignition process, we perform measurements in argon, with pressure varying from 0.1 to 1 bar, using a pin–pin electrode geometry. Here, we

  3. based dynamic voltage restorer

    African Journals Online (AJOL)

    HOD

    operation due to presence of increased use of nonlinear loads (computers, microcontrollers ... simulations of a dynamic voltage restorer (DVR) was achieved using MATLAB/Simulink. ..... using Discrete PWM generator, then the IGBT inverter.

  4. Generalized dielectric permittivity tensor

    International Nuclear Information System (INIS)

    Borzdov, G.N.; Barkovskii, L.M.; Fedorov, F.I.

    1986-01-01

    The authors deal with the question of what is to be done with the formalism of the electrodynamics of dispersive media based on the introduction of dielectric-permittivity tensors for purely harmonic fields when Voigt waves and waves of more general form exist. An attempt is made to broaden and generalize the formalism to take into account dispersion of waves of the given type. In dispersive media, the polarization, magnetization, and conduction current-density vectors of point and time are determined by the values of the electromagnetic field vectors in the vicinity of this point (spatial dispersion) in the preceding instants of time (time dispersion). The dielectric-permittivity tensor and other tensors of electrodynamic parameters of the medium are introduced in terms of a set of evolution operators and not the set of harmonic function. It is noted that a magnetic-permeability tensor and an elastic-modulus tensor may be introduced for an acoustic field in dispersive anisotropic media with coupling equations of general form

  5. Wide Operating Voltage Range Fuel Cell Battery Charger

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos; Mira Albert, Maria del Carmen; Sen, Gokhan

    2014-01-01

    DC-DC converters for fuel cell applications require wide voltage range operation due to the unique fuel cell characteristic curve. Primary parallel isolated boost converter (PPIBC) is a boost derived topology for low voltage high current applications reaching an efficiency figure up to 98...... by two the converter input-to-output voltage gain. This allows covering the conditions when the fuel cell stack operates in the activation region (maximum output voltage) and increases the degrees of freedom for converter optimization. The transition between operating modes is studied because represents...

  6. Statistical characteristics of transient enclosure voltage in ultra-high-voltage gas-insulated switchgear

    Science.gov (United States)

    Cai, Yuanji; Guan, Yonggang; Liu, Weidong

    2017-06-01

    Transient enclosure voltage (TEV), which is a phenomenon induced by the inner dielectric breakdown of SF6 during disconnector operations in a gas-insulated switchgear (GIS), may cause issues relating to shock hazard and electromagnetic interference to secondary equipment. This is a critical factor regarding the electromagnetic compatibility of ultra-high-voltage (UHV) substations. In this paper, the statistical characteristics of TEV at UHV level are collected from field experiments, and are analyzed and compared to those from a repeated strike process. The TEV waveforms during disconnector operations are recorded by a self-developed measurement system first. Then, statistical characteristics, such as the pulse number, duration of pulses, frequency components, magnitude and single pulse duration, are extracted. The transmission line theory is introduced to analyze the TEV and is validated by the experimental results. Finally, the relationship between the TEV and the repeated strike process is analyzed. This proves that the pulse voltage of the TEV is proportional to the corresponding breakdown voltage. The results contribute to the definition of the standard testing waveform of the TEV, and can aid the protection of electronic devices in substations by minimizing the threat of this phenomenon.

  7. Dielectric Actuation of Polymers

    Science.gov (United States)

    Niu, Xiaofan

    Dielectric polymers are widely used in a plurality of applications, such as electrical insulation, dielectric capacitors, and electromechanical actuators. Dielectric polymers with large strain deformations under an electric field are named dielectric elastomers (DE), because of their relative low modulus, high elongation at break, and outstanding resilience. Dielectric elastomer actuators (DEA) are superior to traditional transducers as a muscle-like technology: large strains, high energy densities, high coupling efficiency, quiet operation, and light weight. One focus of this dissertation is on the design of DE materials with high performance and easy processing. UV radiation curing of reactive species is studied as a generic synthesis methodology to provide a platform for material scientists to customize their own DE materials. Oligomers/monomers, crosslinkers, and other additives are mixed and cured at appropriate ratios to control the stress-strain response, suppress electromechanical instability of the resulting polymers, and provide stable actuation strains larger than 100% and energy densities higher than 1 J/g. The processing is largely simplified in the new material system by removal of the prestretching step. Multilayer stack actuators with 11% linear strain are demonstrated in a procedure fully compatible with industrial production. A multifunctional DE derivative material, bistable electroactive polymer (BSEP), is invented enabling repeatable rigid-to-rigid deformation without bulky external structures. Bistable actuation allows the polymer actuator to have two distinct states that can support external load without device failure. Plasticizers are used to lower the glass transition temperature to 45 °C. Interpenetrating polymer network structure is established inside the BSEP to suppress electromechanical instability, providing a breakdown field of 194 MV/m and a stable bistable strain as large as 228% with a 97% strain fixity. The application of BSEP

  8. Low-voltage gyrotrons

    International Nuclear Information System (INIS)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-01-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5–10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%–2% in the submillimeter wavelength region).

  9. Organic thin film transistors with polymer brush gate dielectrics synthesized by atom transfer radical polymerization

    DEFF Research Database (Denmark)

    Pinto, J.C.; Whiting, G.L.; Khodabakhsh, S.

    2008-01-01

    , synthesized by atom transfer radical polymerization (ATRP), were used to fabricate low voltage OFETs with both evaporated pentacene and solution deposited poly(3-hexylthiophene). The semiconductor-dielectric interfaces in these systems were studied with a variety of methods including scanning force microscopy...

  10. A low voltage programmable unipolar inverter with a gold nanoparticle monolayer on plastic.

    Science.gov (United States)

    Zhou, Ye; Han, Su-Ting; Huang, Long-Biao; Huang, Jing; Yan, Yan; Zhou, Li; Roy, V A L

    2013-05-24

    A programmable low voltage unipolar inverter with saturated-load configuration has been demonstrated on a plastic substrate. A self-assembled monolayer of gold (Au) nanoparticles was inserted into the dielectric layer acting as a charge trapping layer. The inverter operated well with supply voltages of inverter. Furthermore, the programmable behavior was maintained well at various bending states, demonstrating the adequate flexibility of our devices.

  11. Investigation of some properties of the dielectric particle detector

    Energy Technology Data Exchange (ETDEWEB)

    Gavalyan, V.G.; Gukasyan, S.M.; Kavalov, R.L.; Karapetyan, R.A.; Lorikyan, M.P. (Erevanskij Fizicheskij Inst. (USSR))

    1981-01-01

    Results of investigation into temporary dispersion and amplitude resolution of a dielectric detector (DD) of particles are given. In this detector secondary electrons produced by a particle passing through a dielectric layer are gathered on thin anode filaments strenched inside the dielectric layer. As a working substance of the detector investigated used was CsI having 1.7% relative density of monocrystal, gap between planes of 20 ..mu..m diameter anode filaments and cathode electrodes was approximately equal to 200 ..mu..m, distance between anode filaments was approximately 250 ..mu..m. DD having working area S=5 cm/sup 2/ was placed at a distance of 2 cm from 5 MeV radioactive alpha source of 10/sup 4/ particle/s intensity. Curve of particle detection efficiency for this detector reached plateau at a level of 100% in the range of working voltages from 800 to 1200 V. Coincidence method together with a time-amplitude converter, at inlets of which applied were pulses from DD and a scintillation counter placed under DD, were used to measure temporary dispersion. Data on behaviour of particle registration efficiency depending on time of continuous effect of working and inverse voltages are given. It is found that temporary dispersion of the DD and scintillation counter system is a value of order of 1 ns and amplitude resolution of DD is an order of 100%.

  12. Radiation sensors based on the generation of mobile protons in organic dielectrics.

    Science.gov (United States)

    Kapetanakis, Eleftherios; Douvas, Antonios M; Argitis, Panagiotis; Normand, Pascal

    2013-06-26

    A sensing scheme based on mobile protons generated by radiation, including ionizing radiation (IonR), in organic gate dielectrics is investigated for the development of metal-insulator-semiconductor (MIS)-type dosimeters. Application of an electric field to the gate dielectric moves the protons and thereby alters the flat band voltage (VFB) of the MIS device. The shift in the VFB is proportional to the IonR-generated protons and, therefore, to the IonR total dose. Triphenylsulfonium nonaflate (TPSNF) photoacid generator (PAG)-containing poly(methyl methacrylate) (PMMA) polymeric films was selected as radiation-sensitive gate dielectrics. The effects of UV (249 nm) and gamma (Co-60) irradiations on the high-frequency capacitance versus the gate voltage (C-VG) curves of the MIS devices were investigated for different total dose values. Systematic improvements in sensitivity can be accomplished by increasing the concentration of the TPSNF molecules embedded in the polymeric matrix.

  13. PV source based high voltage gain current fed converter

    Science.gov (United States)

    Saha, Soumya; Poddar, Sahityika; Chimonyo, Kudzai B.; Arunkumar, G.; Elangovan, D.

    2017-11-01

    This work involves designing and simulation of a PV source based high voltage gain, current fed converter. It deals with an isolated DC-DC converter which utilizes boost converter topology. The proposed converter is capable of high voltage gain and above all have very high efficiency levels as proved by the simulation results. The project intends to produce an output of 800 V dc from a 48 V dc input. The simulation results obtained from PSIM application interface were used to analyze the performance of the proposed converter. Transformer used in the circuit steps up the voltage as well as to provide electrical isolation between the low voltage and high voltage side. Since the converter involves high switching frequency of 100 kHz, ultrafast recovery diodes are employed in the circuitry. The major application of the project is for future modeling of solar powered electric hybrid cars.

  14. Device for monitoring cell voltage

    Science.gov (United States)

    Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  15. Proposed inductive voltage adder based accelerator concepts for the second axis of DARHT

    International Nuclear Information System (INIS)

    Smith, D.L.; Johnson, D.L.; Boyes, J.D.

    1997-01-01

    As participants in the Technology Options Study for the second axis of the Dual Axis Radiographic HydroTest (DARHT) facility located at Los Alamos National Laboratories, the authors have considered several accelerator concepts based on the Inductive Voltage Adder (IVA) technology that is being used successfully at Sandia on the SABRE and HERMES-III facilities. The challenging accelerator design requirements for the IVA approach include: ≥12-MeV beam energy; ∼60-ns electrical pulse width; ≤40-kA electron beam current; ∼1-mm diameter e-beam; four pulses on the same axis or as close as possible to that axis; and an architecture that fits within the existing building envelope. To satisfy these requirements the IVA concepts take a modular approach. The basic idea is built upon a conservative design for eight ferromagnetically isolated 2-MV cavities that are driven by two 3 to 4-Ω water dielectric pulse forming lines (PFLs) synchronized with laser triggered gas switches. The 100-Ω vacuum magnetically insulated transmission line (MITL) would taper to a needle cathode that produces the electron beam(s). After considering many concepts the authors narrowed their study to the following options: (A) Four independent single pulse drivers powering four single pulse diodes; (B) Four series adders with interleaved cavities feeding a common MITL and diode; (C) Four stages of series PFLs, isolated from each other by triggered spark gap switches, with single-point feeds to a common adder, MITL, and diode; and (D) Isolated PFLs with multiple-feeds to a common adder using spark gap switches in combination with saturable magnetic cores to isolate the non-energized lines. The authors will discuss these options in greater detail identifying the challenges and risks associated with each

  16. Hydrodynamical flows in dielectric liquid in strong inhomogeneous pulsed electric field

    International Nuclear Information System (INIS)

    Tereshonok, Dmitry V; Babaeva, Natalia Yu; Naidis, George V; Smirnov, Boris M

    2016-01-01

    We consider a hydrodynamical flow of dielectric liquid near a high voltage needle-shaped electrode in a strong inhomogeneous pulsed electric field. It was shown that under a small rise time, a negative pressure area (pressure is less than critical pressure) appears near the electrode leading to the formation of a cavity in which electric breakdown can develop. A comparison of the dependence of the velocity of fluid near an electrode for two cases (taking into account the dependence of dielectric permeability of the liquid on the electric field and without taking it into account) was made. A field-dependent dielectric coefficient leads to the appearance of two local maximums of the velocities and increases the minimum pressure, thus lowering the possibility of cavitation. While under the constant value of dielectric permeability only one local maximum appears. (paper)

  17. Dual-Input Soft-Switched DC-DC Converter with Isolated Current-Fed Half-Bridge and Voltage-Fed Full-Bridge for Fuel Cell or Photovoltaic Systems

    DEFF Research Database (Denmark)

    Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.

    2013-01-01

    integrate a current-fed boost half-bridge (BHB) and a full-bridge (FB) into one equivalent circuit configuration which has dual-input ability and additionally it can reduce the number of the power devices. With the phase-shift control, it can achieve zero-voltage switching turn-on of active switches...... power rating are built up and tested to demonstrate the effectiveness of the proposed converter topology....

  18. Phase Identification and Dielectric Properties of Pb0.94 Ca0.06 TiO3 Ceramics

    International Nuclear Information System (INIS)

    Khin Thida; Tin Tin Aye; Aye Aye Phyu; Moe Moe Myint; Ko Ko Kyaw Soe

    2008-03-01

    The ferroelectric materials of Ca (6 mol %) doped PbTiO3 (abbreviated to PCT6) ceamics were prepared by using conventional solid solution method. Phase assignment is identified by XRD technique. The change in capacitance, the variation of dielectric constant and dielectric loss as a function of applied frequency modes (1 kHz-10 kHz)at zero bias voltage of PCT6 ceramics by using Cu and Ag electrodes were investigated.

  19. Voltage-stabilised elastomers with increased relative permittivity and high electrical breakdown strength by means of phase separating binary copolymer blends of silicone elastomers

    DEFF Research Database (Denmark)

    A Razak, Aliff Hisyam; Yu, Liyun; Skov, Anne Ladegaard

    2017-01-01

    Increased electrical breakdown strength and increased dielectric permittivity of silicone-based dielectric elastomers are achieved by means of the addition of so-called voltage-stabilisers prepared from PDMS–PPMS copolymers as well as PDMS–PEG copolymers in order to compensate for the negative...... effect of softness on electrical stability of silicone elastomers. The voltage-stabilised elastomer, incorporating a high-permittivity PDMS–PEG copolymer, possesses increased relative permittivity, high electrical breakdown strength, excellent network integrity and low dielectric loss and paves the way...

  20. Laser amplification in excited dielectrics

    DEFF Research Database (Denmark)

    Winkler, Thomas; Haahr-Lillevang, Lasse; Sarpe, Cristian

    2018-01-01

    Wide-bandgap dielectrics such as glasses or water are transparent at visible and infrared wavelengths. This changes when they are exposed to ultrashort and highly intense laser pulses. Different interaction mechanisms lead to the appearance of various transient nonlinear optical phenomena. Using...... these, the optical properties of dielectrics can be controlled from the transparent to the metal-like state. Here we expand this range by a yet unexplored mechanism in excited dielectrics: amplification. In a two-colour pump-probe experiment, we show that a 400nm femtosecond laser pulse is coherently...

  1. Research of Dielectric Breakdown Micro fluidic Sampling Chip

    International Nuclear Information System (INIS)

    Jiang, F.; Lei, Y.; Yu, J.

    2013-01-01

    Micro fluidic chip is mainly driven electrically by external electrode and array electrode, but there are certain disadvantages in both of ways, which affect the promotion and application of micro fluidic technology. This paper discusses a scheme that uses the conductive solution in a microchannel made by PDMS, replacing electrodes and the way of dielectric breakdown to achieve microfluidic chip driver. It could reduce the driving voltage and simplify the chip production process. To prove the feasibility of this method, we produced a micro fluidic chip used in PDMS material with the lithography technology and experimented it. The results showed that using the dielectric breakdown to achieve microfluidic chip driver is feasible, and it has certain application prospect.

  2. Atmospheric pressure dielectric barrier discharges for sterilization and surface treatment

    Energy Technology Data Exchange (ETDEWEB)

    Chin, O. H.; Lai, C. K.; Choo, C. Y.; Wong, C. S.; Nor, R. M. [Plasma Technology Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Thong, K. L. [Microbiology Division, Institute of Biological Sciences, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-04-24

    Atmospheric pressure non-thermal dielectric barrier discharges can be generated in different configurations for different applications. For sterilization, a parallel-plate electrode configuration with glass dielectric that discharges in air was used. Gram-negative bacteria (Escherichia coli and Salmonella enteritidis) and Gram-positive bacteria (Bacillus cereus) were successfully inactivated using sinusoidal high voltage of ∼15 kVp-p at 8.5 kHz. In the surface treatment, a hemisphere and disc electrode arrangement that allowed a plasma jet to be extruded under controlled nitrogen gas flow (at 9.2 kHz, 20 kVp-p) was applied to enhance the wettability of PET (Mylar) film.

  3. Non-linear dielectric monitoring of biological suspensions

    International Nuclear Information System (INIS)

    Treo, E F; Felice, C J

    2007-01-01

    Non-linear dielectric spectroscopy as a tool for in situ monitoring of enzyme assumes a non-linear behavior of the sample when a sinusoidal voltage is applied to it. Even many attempts have been made to improve the original experiments, all of them had limited success. In this paper we present upgrades made to a non-linear dielectric spectrometer developed and the results obtained when using different cells. We emphasized on the electrode surface, characterizing the grinding and polishing procedure. We found that the biological medium does not behave as expected, and the non-linear response is generated in the electrode-electrolyte interface. The electrochemistry of this interface can bias unpredictably the measured non-linear response

  4. A novel variable stiffness mechanism for dielectric elastomer actuators

    Science.gov (United States)

    Li, Wen-Bo; Zhang, Wen-Ming; Zou, Hong-Xiang; Peng, Zhi-Ke; Meng, Guang

    2017-08-01

    In this paper, a novel variable stiffness mechanism is proposed for the design of a variable stiffness dielectric elastomer actuator (VSDEA) which combines a flexible strip with a DEA in a dielectric elastomer minimum energy structure. The DEA induces an analog tuning of the transverse curvature of the strip, thus conveniently providing a voltage-controllable flexural rigidity. The VSDEA tends to be a fully flexible and compact structure with the advantages of simplicity and fast response. Both experimental and theoretical investigations are carried out to reveal the variable stiffness performances of the VSDEA. The effect of the clamped location on the bending stiffness of the VSDEA is analyzed, and then effects of the lengths, the loading points and the applied voltages on the bending stiffness are experimentally investigated. An analytical model is developed to verify the availability of this variable stiffness mechanism, and the theoretical results demonstrate that the bending stiffness of the VSDEA decreases as the applied voltage increases, which agree well with the experimental data. Moreover, the experimental results show that the maximum change of the relative stiffness can reach about 88.80%. It can be useful for the design and optimization of active variable stiffness structures and DEAs for soft robots, vibration control, and morphing applications.

  5. The electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures

    Science.gov (United States)

    Karabulut, Abdulkerim; Türüt, Abdulmecit; Karataş, Şükrü

    2018-04-01

    In this work, temperature dependent electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures were investigated using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in the temperature range of 60-320 K by steps of 20 K at 1 MHz. The dielectric constant (ε‧), dielectric loss (ε″), dielectric loss tangent (tanδ) and ac electrical conductivities (σac) have been calculated as a function of temperature. These values of the ε‧, ε″, tanδ and σac have been found to be 2.272, 5.981, 2.631 and 3.32 × 10-6 (Ω-1cm-1) at 80 K, respectively, 1.779, 2.315, 1.301 and 1.28 × 10-6 (Ω-1cm-1), respectively at 320 K. These decrease of the dielectric parameters (ε‧, ε″, tanδ and σac) have been observed at high temperatures. The experimental results show that electrical and dielectric properties are strongly temperature and bias voltage dependent.

  6. Low Voltage Electrowetting on Ferroelectric PVDF-HFP Insulator with Highly Tunable Contact Angle Range.

    Science.gov (United States)

    Sawane, Yogesh B; Ogale, Satishchandra B; Banpurkar, Arun G

    2016-09-14

    We demonstrate a consistent electrowetting response on ferroelectric poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) insulator covered with a thin Teflon AF layer. This bilayer exhibits a factor of 3 enhancement in the contact angle modulation compared to that of conventional single-layered Teflon AF dielectric. On the basis of the proposed model the enhancement is attributed to the high value of effective dielectric constant (εeff ≈ 6) of the bilayer. Furthermore, the bilayer dielectric exhibits a hysteresis-free contact angle modulation over many AC voltage cycles. But the contact angle modulation for DC voltage shows a hysteresis because of the field-induced residual polarization in the ferroelectric layer. Finally, we show that a thin bilayer exhibits contact angle modulation of Δθ (U) ≈ 60° at merely 15 V amplitude of AC voltage indicating a potential dielectric for practical low voltage electrowetting applications. A proof of concept confirms electrowetting based rapid mixing of a fluorescent dye in aqueous glycerol solution for 15 V AC signal.

  7. Effect of applied voltage parameters on the electric characteristics of a DBD in coaxial electrode configuration

    NARCIS (Netherlands)

    Petrovic, D.; Martens, T.; De Bie, C.; Brok, W.J.M.; Bogaerts, A.; Schmidt, J.; Simek, M.; Pekarek, S.

    2009-01-01

    A numerical parameter study has been performed for a cylindrical atmospheric pressure dielectric barrier discharge (DBD) in helium with nitrogen impurities using a two-dimensional time dependent fluid model. The calculated electric currents and gap voltages as a function of time for a given applied

  8. Design and Development of Autonomous High Voltage Driving System for DEAP Actuator in Radiator Thermostat

    DEFF Research Database (Denmark)

    Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.

    2014-01-01

    In radiator thermostat applications, DEAP (Dielectric Electro Active Polymer) actuator tends to be a good candidate to replace the conventional self-actuating or step motor based actuator due to its intrinsic advantages. The capacitive property and high voltage (HV) driving demand of DEAP actuator...

  9. Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-κ organic dielectric

    International Nuclear Information System (INIS)

    Ze-Gao, Wang; Yuan-Fu, Chen; Cao, Chen; Ben-Lang, Tian; Fu-Tong, Chu; Xing-Zhao, Liu; Yan-Rong, Li

    2010-01-01

    The electrical properties of AlGaN/GaN high electron mobility transistor (HEMT) with and without high-κ organic dielectrics are investigated. The maximum drain current I D max and the maximum transconductance g m max of the organic dielectric/AlGaN/GaN structure can be enhanced by 74.5%, and 73.7% compared with those of the bare AlGaN/GaN HEMT, respectively. Both the threshold voltage V T and g m max of the dielectric/AlGaN/GaN HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the AlGaN/GaN HEMT by introducing the high-κ organic dielectric. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Universal trench design method for a high-voltage SOI trench LDMOS

    Institute of Scientific and Technical Information of China (English)

    Hu Xiarong; Zhang Bo; Luo Xiaorong; Li Zhaoji

    2012-01-01

    The design method for a high-voltage SOl trench LDMOS for various trench permittivities,widths and depths is introduced.A universal method for efficient design is presented for the first time,taking the trade-off between breakdown voltage (BV) and specific on-resistance (Rs,on) into account.The high-k (relative permittivity)dielectric is suitable to fill a shallow and wide trench while the low-k dielectric is suitable to fill a deep and narrow trench.An SOI LDMOS with a vacuum trench in the drift region is also discussed.Simulation results show that the high FOM BV2/Rs,on can be achieved with a trench filled with the low-k dielectric due to its shortened cell-pitch.

  11. High frequency breakdown voltage

    International Nuclear Information System (INIS)

    Chu, Thanh Duy.

    1992-03-01

    This report contains information about the effect of frequency on the breakdown voltage of an air gap at standard pressure and temperature, 76 mm Hg and O degrees C, respectively. The frequencies of interest are 47 MHz and 60 MHz. Additionally, the breakdown in vacuum is briefly considered. The breakdown mechanism is explained on the basis of collision and ionization. The presence of the positive ions produced by ionization enhances the field in the gap, and thus determines the breakdown. When a low-frequency voltage is applied across the gap, the breakdown mechanism is the same as that caused by the DC or static voltage. However, when the frequency exceeds the first critical value f c , the positive ions are trapped in the gap, increasing the field considerably. This makes the breakdown occur earlier; in other words, the breakdown voltage is lowered. As the frequency increases two decades or more, the second critical frequency, f ce , is reached. This time the electrons start being trapped in the gap. Those electrons that travel multiple times across the gap before reaching the positive electrode result in an enormous number of electrons and positive ions being present in the gap. The result is a further decrease of the breakdown voltage. However, increasing the frequency does not decrease the breakdown voltage correspondingly. In fact, the associated breakdown field intensity is almost constant (about 29 kV/cm).The reason is that the recombination rate increases and counterbalances the production rate, thus reducing the effect of the positive ions' concentration in the gap. The theory of collision and ionization does not apply to the breakdown in vacuum. It seems that the breakdown in vacuum is primarily determined by the irregularities on the surfaces of the electrodes. Therefore, the effect of frequency on the breakdown, if any, is of secondary importance

  12. Study of a Modified AC Bridge Technique for Loss Angle Measurement of a Dielectric Material

    Directory of Open Access Journals (Sweden)

    S. C. BERA

    2008-09-01

    Full Text Available A Wheatstone’s bridge network like Schering Bridge, DeSauty Bridge etc measures the loss angle or tangent of loss angle (tanδ of a dielectric material. In high voltage application this loss angle is generally measured by high voltage Schering Bridge. But continuous measurement of tan δ is not possible by these techniques. In the present paper a modified operational amplifiers based Schering Bridge network has been proposed for continuous measurement of tanδ in the form of a bridge network output voltage. Mathematical analysis of the proposed bridge network has been discussed in the paper and experimental work has been performed assuming the lossy dielectric material as a series combination of loss less capacitor and a resistor. Experimental results are reported in the paper. From the mathematical analysis and experimental results it is found that the output of the proposed bridge network is almost linearly related with tanδ.

  13. Dielectric breakdown and healing of anodic oxide films on aluminium under single pulse anodizing

    International Nuclear Information System (INIS)

    Sah, Santosh Prasad; Tatsuno, Yasuhiro; Aoki, Yoshitaka; Habazaki, Hiroki

    2011-01-01

    Research highlights: → We examined dielectric breakdown of anodic alumina by single pulse anodizing. → Current transients and morphology of discharge channels are dependent upon electrolyte and voltage. → There is a good correlation between current transient and morphology of discharge channel. → Healing of open discharge pores occurs in alkaline silicate, but not in pentaborate electrolyte. - Abstract: Single pulse anodizing of aluminium micro-electrode has been employed to study the behaviour of dielectric breakdown and subsequent oxide formation on aluminium in alkaline silicate and pentaborate electrolytes. Current transients during applying pulse voltage have been measured, and surface has been observed by scanning electron microscopy. Two types of current transients are observed, depending on the electrolyte and applied voltage. There is a good correlation between the current transient behaviour and the shape of discharge channels. In alkaline silicate electrolyte, circular open pores are healed by increasing the pulse width, but such healing is not obvious in pentaborate electrolyte.

  14. Statistical modelling of discharge behavior of atmospheric pressure dielectric barrier discharge

    Energy Technology Data Exchange (ETDEWEB)

    Tay, W. H.; Kausik, S. S.; Wong, C. S., E-mail: cswong@um.edu.my; Yap, S. L.; Muniandy, S. V. [Plasma Technology Research Centre, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2014-11-15

    In this work, stochastic behavior of atmospheric pressure dielectric barrier discharge (DBD) has been investigated. The experiment is performed in a DBD reactor consisting of a pair of stainless steel parallel plate electrodes powered by a 50 Hz ac high voltage source. Current pulse amplitude distributions for different space gaps and the time separation between consecutive current pulses are studied. A probability distribution function is proposed to predict the experimental distribution function for the current pulse amplitudes and the occurrence of the transition regime of the pulse distribution. Breakdown voltage at different positions on the dielectric surface is suggested to be stochastic in nature. The simulated results based on the proposed distribution function agreed well with the experimental results and able to predict the regime of transition voltage. This model would be useful for the understanding of stochastic behaviors of DBD and the design of DBD device for effective operation and applications.

  15. Theoretical analysis of ozone generation by pulsed dielectric barrier discharge in oxygen

    Science.gov (United States)

    Wei, L. S.; Zhou, J. H.; Wang, Z. H.; Cen, K. F.

    2007-08-01

    The use of very short high-voltage pulses combined with a dielectric layer results in high-energy electrons that dissociate oxygen molecules into atoms, which are a prerequisite for the subsequent production of ozone by collisions with oxygen molecules and third particles. The production of ozone depends on both the electrical and the physical parameters. For ozone generation by pulsed dielectric barrier discharge in oxygen, a mathematical model, which describes the relation between ozone concentration and these parameters that are of importance in its design, is developed according to dimensional analysis theory. A formula considering the ozone destruction factor is derived for predicting the characteristics of the ozone generation, within the range of the corona inception voltage to the gap breakdown voltage. The trend showing the dependence of the concentration of ozone in oxygen on these parameters generally agrees with the experimental results, thus confirming the validity of the mathematical model.

  16. Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

    International Nuclear Information System (INIS)

    Koo, Jae Bon; Lim, Jung Wook; Kim, Seong Hyun; Yun, Sun Jin; Ku, Chan Hoe; Lim, Sang Chul; Lee, Jung Hun

    2007-01-01

    The performances of pentacene thin-film transistor with plasma-enhanced atomic-layer-deposited (PEALD) 150 nm thick Al 2 O 3 dielectric are reported. Saturation mobility of 0.38 cm 2 /V s, threshold voltage of 1 V, subthreshold swing of 0.6 V/decade, and on/off current ratio of about 10 8 have been obtained. Both depletion and enhancement mode inverter have been realized with the change of treatment method of hexamethyldisilazane on PEALD Al 2 O 3 gate dielectric. Full swing depletion mode inverter has been demonstrated at input voltages ranging from 5 V to - 5 V at supply voltage of - 5 V

  17. Dielectric inspection of erythrocyte morphology

    International Nuclear Information System (INIS)

    Hayashi, Yoshihito; Oshige, Ikuya; Katsumoto, Yoichi; Omori, Shinji; Yasuda, Akio; Asami, Koji

    2008-01-01

    We performed a systematic study of the sensitivity of dielectric spectroscopy to erythrocyte morphology. Namely, rabbit erythrocytes of four different shapes were prepared by precisely controlling the pH of the suspending medium, and their complex permittivities over the frequency range from 0.1 to 110 MHz were measured and analyzed. Their quantitative analysis shows that the characteristic frequency and the broadening parameter of the dielectric relaxation of interfacial polarization are highly specific to the erythrocyte shape, while they are insensitive to the cell volume fraction. Therefore, these two dielectric parameters can be used to differentiate erythrocytes of different shapes, if dielectric spectroscopy is applied to flow-cytometric inspection of single blood cells. In addition, we revealed the applicability and limitations of the analytical theory of interfacial polarization to explain the experimental permittivities of non-spherical erythrocytes

  18. Dielectric inspection of erythrocyte morphology

    Energy Technology Data Exchange (ETDEWEB)

    Hayashi, Yoshihito; Oshige, Ikuya; Katsumoto, Yoichi; Omori, Shinji; Yasuda, Akio [Life Science Laboratory, Materials Laboratories, Sony Corporation, Sony Bioinformatics Center, Tokyo Medical and Dental University, Bunkyo-ku, Tokyo 113-8510 (Japan); Asami, Koji [Laboratory of Molecular Aggregation Analysis, Division of Multidisciplinary Chemistry, Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)], E-mail: Yoshihito.Hayashi@jp.sony.com

    2008-05-21

    We performed a systematic study of the sensitivity of dielectric spectroscopy to erythrocyte morphology. Namely, rabbit erythrocytes of four different shapes were prepared by precisely controlling the pH of the suspending medium, and their complex permittivities over the frequency range from 0.1 to 110 MHz were measured and analyzed. Their quantitative analysis shows that the characteristic frequency and the broadening parameter of the dielectric relaxation of interfacial polarization are highly specific to the erythrocyte shape, while they are insensitive to the cell volume fraction. Therefore, these two dielectric parameters can be used to differentiate erythrocytes of different shapes, if dielectric spectroscopy is applied to flow-cytometric inspection of single blood cells. In addition, we revealed the applicability and limitations of the analytical theory of interfacial polarization to explain the experimental permittivities of non-spherical erythrocytes.

  19. Silicone-based Dielectric Elastomers

    DEFF Research Database (Denmark)

    Skov, Anne Ladegaard

    Efficient conversion of energy from one form to another (transduction) is an important topic in our daily day, and it is a necessity in moving away from the fossil based society. Dielectric elastomers hold great promise as soft transducers, since they are compliant and light-weight amongst many...... energy efficient solutions are highly sought. These properties allow for interesting products ranging very broadly, e.g. from eye implants over artificial skins over soft robotics to huge wave energy harvesting plants. All these products utilize the inherent softness and compliance of the dielectric...... elastomer transducers. The subject of this thesis is improvement of properties of silicone-based dielectric elastomers with special focus on design guides towards electrically, mechanically, and electromechanically reliable elastomers. Strategies for improving dielectric elastomer performance are widely...

  20. Depth Profiling of La2O3 ∕ HfO2 Stacked Dielectrics for Nanoelectronic Device Applications

    KAUST Repository

    Alshareef, Husam N.

    2011-01-03

    Nanoscale La2O3 /HfO2 dielectric stacks have been studied using high resolution Rutherford backscattering spectrometry. The measured distance of the tail-end of the La signal from the dielectric/Si interface suggests that the origin of the threshold voltage shifts and the carrier mobility degradation may not be the same. Up to 20% drop in mobility and 500 mV shift in threshold voltage was observed as the La signal reached the Si substrate. Possible reasons for these changes are proposed, aided by depth profiling and bonding analysis. © 2011 The Electrochemical Society.

  1. The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

    International Nuclear Information System (INIS)

    Shekhter, P.; Yehezkel, S.; Shriki, A.; Eizenberg, M.; Chaudhuri, A. R.; Osten, H. J.; Laha, A.

    2014-01-01

    One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd 2 O 3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures

  2. Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

    International Nuclear Information System (INIS)

    Sarma, R.; Saikia, D.

    2010-01-01

    We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with high-k dielectric Nd 2 O 3 . Use of high dielectric constant (high-k) gate insulator Nd 2 O 3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 X 10 4 and mobility is 0.13cm 2 /V.s. Pentacene film is deposited on Nd 2 O 3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. (author)

  3. Interconnect Between a Waveguide and a Dielectric Waveguide Comprising an Impedance Matched Dielectric Lens

    Science.gov (United States)

    Decrossas, Emmanuel (Inventor); Chattopadhyay, Goutam (Inventor); Chahat, Nacer (Inventor); Tang, Adrian J. (Inventor)

    2016-01-01

    A lens for interconnecting a metallic waveguide with a dielectric waveguide is provided. The lens may be coupled a metallic waveguide and a dielectric waveguide, and minimize a signal loss between the metallic waveguide and the dielectric waveguide.

  4. Digital voltage discriminator

    International Nuclear Information System (INIS)

    Zhou Zhicheng

    1992-01-01

    A digital voltage discriminator is described, which is synthesized by digital comparator and ADC. The threshold is program controllable with high stability. Digital region of confusion is approximately equal to 1.5 LSB. This discriminator has a single channel analyzer function model with channel width of 1.5 LSB

  5. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  6. Geomagnetism and Induced Voltage

    Science.gov (United States)

    Abdul-Razzaq, W.; Biller, R. D.

    2010-01-01

    Introductory physics laboratories have seen an influx of "conceptual integrated science" over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it…

  7. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system...... to unbalanced faults. The compensation of unbalanced voltage sags and voltage unbalance in the CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0........ The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbalances, for the tested cases in the CIGRE LV test network are mainly due to single phase loads and due...

  8. Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

    KAUST Repository

    Petti, Luisa; Pattanasattayavong, Pichaya; Lin, Yen-Hung; Mü nzenrieder, Niko; Cantarella, Giuseppe; Yaacobi-Gross, Nir; Yan, Feng; Trö ster, Gerhard; Anthopoulos, Thomas D.

    2017-01-01

    , depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as −3.5 V. Importantly, discrete CuSCN transistors

  9. Design Comparison of Autonomous High Voltage Driving System for DEAP Actuator

    DEFF Research Database (Denmark)

    Huang, Lina; Pittini, Riccardo; Zhang, Zhe

    2014-01-01

    As a new type of smart material, the Dielectric Electro Active Polymer (DEAP) is introduced in terms of configuration, working principle and potential applications. The design of an autonomous high voltage driving system for DEAP actuator is investigated. The system configuration and the design...... methodology of a high voltage converter are discussed in detail. Based on the heating valve application, three different high voltage converter solutions have been proposed. The different proposals have been compared in terms of energy loss, volume and cost. Finally, the design selection suggestions...

  10. Ozone Production Using Pulsed Dielectric Barrier Discharge in Oxygen

    OpenAIRE

    Samaranayake, W. J. M.; Miyahara, Y.; Namihira, T.; Katsuki, S.; Hackam, R.; Akiyama, H.; ナミヒラ, タカオ; カツキ, スナオ; アキヤマ, ヒデノリ; 浪平, 隆男; 勝木, 淳; 秋山, 秀典

    2000-01-01

    The production of ozone was investigated using a dielectric barrier discharge in oxygen, and employing short-duration pulsed power. The dependence of the ozone concentration (parts per million, ppm) and ozone production yield (g(O3)/kWh) on the peak pulsed voltage (17.5 to 57.9 kV) and the pulse repetition rate (25 to 400 pulses/s, pps) were investigated. In the present study, the following parameters were kept constant: a pressure of 1.01×105 Pa, a temperature of 26±4°C a gas flow rate of 3....

  11. Structural, dielectric and ferroelectric characterization of PZT thin films

    Directory of Open Access Journals (Sweden)

    Araújo E.B.

    1999-01-01

    Full Text Available In this work ferroelectric thin films of PZT were prepared by the oxide precursor method, deposited on Pt/Si substrate. Films of 0.5 mm average thickness were obtained. Electrical and ferroelectric characterization were carried out in these films. The measured value of the dielectric constant for films was 455. Ferroelectricity was confirmed by Capacitance-Voltage (C-V characteristics and P-E hysteresis loops. Remanent polarization for films presented value around 5.0 µC/cm2 and a coercive field of 88.8 kV/cm.

  12. Finite-size resonance dielectric cylinder in a rectangular waveguide

    International Nuclear Information System (INIS)

    Chuprina, V.N.; Khizhnyak, N.A.

    1988-01-01

    The problem on resonance spread of an electromagnetic wave by a dielectric circular cylinder of finite size in a rectangular waveguide is solved by a numerical-analytical method. The cylinder axes are parallel. The cylinder can be used as a resonance tuning element in accelerating SHF-sections. Problems on cutting off linear algebraic equation systems, to which relations of macroscopic electrodynamics in the integral differential form written for the concrete problem considered here are reduced by analytical transformations, are investigated in the stage of numerical analysis. Theoretical dependences of the insertion of the voltage standing wave coefficient on the generator wave length calculated for different values of problem parameters are constracted

  13. The Significance of Breakdown Voltages for Quality Assurance of Low-Voltage BME Ceramic Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2014-01-01

    Application of thin dielectric, base metal electrode (BME) ceramic capacitors for high-reliability applications requires development of testing procedures that can assure high quality and reliability of the parts. In this work, distributions of breakdown voltages (VBR) in variety of low-voltage BME multilayer ceramic capacitors (MLCCs) have been measured and analyzed. It has been shown that analysis of the distributions can indicate the proportion of defective parts in the lot and significance of the defects. Variations of the distributions after solder dip testing allow for an assessment of the robustness of capacitors to soldering-related stresses. The drawbacks of the existing screening and qualification methods to reveal defects in high-value, low-voltage MLCCs and the importance of VBR measurements are discussed. Analysis has shown that due to a larger concentration of oxygen vacancies, defect-related degradation of the insulation resistance (IR) and failures are more likely in BME compared to the precious metal electrode (PME) capacitors.

  14. Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage p....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0.......Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage...... problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults...

  15. Effect of argon ion implantation on the electrical and dielectric properties of CR-39

    International Nuclear Information System (INIS)

    Chawla, Mahak; Shekhawat, Nidhi; Goyal, Meetika; Gupta, Divya; Sharma, Annu; Aggarwal, Sanjeev

    2016-01-01

    The objective of the present work is to study the effect of 130 keV Ar"+ ions on the electrical and dielectric properties of CR-39 samples at various doses 5×10"1"4, 1×10"1"5 and 1×10"1"6 Ar"+ cm"−"2. Current-Voltage (I-V characteristics) measurements have been used to study the electrical properties of virgin and Ar"+ implanted CR-39 specimens. The current has been found to be increased with increasing voltage as well as with increasing ion dose. The dielectric spectroscopy of these specimens has been done in the frequency range of 100 kHz-100 MHz. The dielectric constant has been found to be decreasing whereas dielectric loss factor increases with increasing ion fluence. These kind of behavior observed in the implanted specimens indicate towards the formation of carbonaceous clusters due to the cross linking, chemical bond cleavage, formation of free radicals. The changes observed in the dielectric behavior have been further correlated with the structural changes observed through I-V characteristics.

  16. Influence of ion transport on discharge propagation of nanosecond dielectric barrier discharge plasma actuator

    Science.gov (United States)

    Hua, Weizhuo; Koji, Fukagata

    2017-11-01

    A numerical study has been conducted to understand the streamer formation and propagation of nanosecond pulsed surface dielectric barrier discharge of positive polarity. First we compared the result of different grid configuration to investigate the influence of x and y direction grid spacing on the streamer propagation. The streamer propagation is sensitive to y grid spacing especially at the dielectric surface. The streamer propagation velocity can reach 0.2 cm/ns when the voltage magnitude is 12 kV. A narrow gap was found between the streamer and dielectric barrier, where the plasma density is several orders of magnitude smaller than the streamer region. Analyses on the ion transport in the gap and streamer regions show the different ion transport mechanisms in the two different region. In the gap region, the diffusion of electron toward the dielectric layer decreases the seed electron in the beginning of voltage pulse, resulting that ionization avalanche does not occur. The streamer region is not significantly affected by the diffusion flux toward the dielectric layer, so that ionization avalanche takes place and leads to dramatic increase of plasma density.

  17. Homogeneous dielectric barrier discharges in atmospheric air and its influencing factor

    Science.gov (United States)

    Ran, Junxia; Li, Caixia; Ma, Dong; Luo, Haiyun; Li, Xiaowei

    2018-03-01

    The stable homogeneous dielectric barrier discharge (DBD) is obtained in atmospheric 2-3 mm air gap. It is generated using center frequency 1 kHz high voltage power supply between two plane parallel electrodes with specific alumina ceramic plates as the dielectric barriers. The discharge characteristics are studied by a measurement of its electrical discharge parameters and observation of its light emission phenomena. The results show that a large single current pulse of about 200 μs duration appearing in each voltage pulse, and its light emission is radially homogeneous and covers the entire surface of the two electrodes. The homogeneous discharge generated is a Townsend discharge during discharge. The influences of applied barrier, its thickness, and surface roughness on the transition of discharge modes are studied. The results show that it is difficult to produce a homogeneous discharge using smooth plates or alumina plate surface roughness Ra material, dielectric thickness, and dielectric surface roughness should be used, and proper applied voltage amplitude and frequency should also be used.

  18. Comparative Study of Breakdown Voltage of Mineral, Synthetic and Natural Oils and Based Mineral Oil Mixtures under AC and DC Voltages

    Directory of Open Access Journals (Sweden)

    Abderrahmane Beroual

    2017-04-01

    Full Text Available This paper deals with a comparative study of AC and DC breakdown voltages of based mineral oil mixtures with natural and synthetic esters mainly used in high voltage power transformers. The goal was to analyze the performances of oil mixtures from the dielectric withstand point of view and to predict the behavior of transformers originally filled with mineral oil and re-filled with synthetic or natural ester oils when emptied for maintenance. The study concerns mixtures based on 20%, 50%, and 80% of natural and synthetic ester oils. AC breakdown voltages were measured using a sphere-sphere electrode system according to IEC 60156 specifications; the same specification was adopted for DC measurements since there is no standard specifications for this voltage waveform. A statistical analysis of the mean values, standard deviations, and histograms of breakdown voltage data was carried out. The Normal and Weibull distribution functions were used to analyze the experimental data and the best function that the data followed was used to estimate the breakdown voltage with risk of 1%, 10%, and 50% probability. It was shown that whatever the applied voltage waveforms, ester oils always have a significantly higher breakdown voltage than mineral oil. The addition of only 20% of natural or synthetic ester oil was sufficient to considerably increase the breakdown voltage of mineral oil. The dielectric strength of such a mixture is much higher than that of mineral oil alone and can reach that of ester oils. From the point of view of dielectric strength, the mixtures constitute an option for improving the performance of mineral oil. Thus, re-filling of transformers containing up to 20% mineral oil residues with ester oils, does not present any problem; it is even advantageous when considering only the breakdown voltage. Under AC, the mixtures with natural ester always follow the behavior of vegetable oil alone. With the exception of the 20% mixture of natural

  19. PZT/PLZT - elastomer composites with improved piezoelectric voltage coefficient

    Science.gov (United States)

    Harikrishnan, K.; Bavbande, D. V.; Mohan, Dhirendra; Manoharan, B.; Prasad, M. R. S.; Kalyanakrishnan, G.

    2018-02-01

    Lead Zirconate Titanate (PZT) and Lanthanum-modified Lead Zirconate Titanate (PLZT) ceramic sensor materials are widely used because of their excellent piezoelectric coefficients. These materials are brittle, high density and have low achievable piezoelectric voltage coefficients. The density of the sintered ceramics shall be reduced by burnable polymeric sponge method. The achievable porosity level in this case is nearly 60 - 90%. However, the porous ceramic structure with 3-3 connectivity produced by this method is very fragile in nature. The strength of the porous structure is improved with Sylgard®-184 (silicone elastomer) by vacuum impregnation method maintaining the dynamic vacuum level in the range of -650 mm Hg. The elastomer Sylgard®-184 is having low density, low dielectric constant and high compliance (as a resultant stiffness of the composites is increased). To obtain a net dipole moment, the impregnated ceramic composites were subjected to poling treatment with varying conditions of D.C. field and temperature. The properties of the poled PZT/PLZT - elastomer composites were characterized with LCR meter for measuring the dielectric constant values (k), d33 meter used for measuring piezo-electric charge coefficient values (d33) and piezo-electric voltage coefficient (g33) values which were derived from d33 values. The voltage coefficient (g33) values of these composites are increased by 10 fold as compared to the conventional solid ceramics demonstrates that it is possible to fabricate a conformable detector.

  20. Triple voltage dc-to-dc converter and method

    Science.gov (United States)

    Su, Gui-Jia

    2008-08-05

    A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

  1. A dielectric barrier discharge in neon at atmospheric pressure

    International Nuclear Information System (INIS)

    Ran Junxia; Luo Haiyun; Wang Xinxin

    2011-01-01

    A dielectric barrier discharge in neon at atmospheric pressure is investigated with electrical measurement and fast photography. It is found that a stable diffuse discharge can be easily generated in a gap with a gap space of 0.5-6 mm and is identified with a glow discharge. The first breakdown voltage of the gap is considerably higher than that of the same gap working in a stable diffuse discharge mode, which indicates that Penning ionization of neon metastables from the previous discharge with inevitable gas impurities plays an important role in the decrease in the breakdown voltage. Discharge patterns are observed in a gap shorter than 1 mm. From the experiments with a wedge-like gap, it is found that the discharge patterns are formed in the area with a higher applied electric field, which suggests that a higher applied electric field may cause a transition from a diffuse glow to discharge patterns.

  2. Mechanistic interaction study of thin oxide dielectric with conducting organic electrode

    International Nuclear Information System (INIS)

    Sharma, Himani; Sethi, Kanika; Raj, P. Markondeya; Gerhardt, R.A.; Tummala, Rao

    2012-01-01

    Highlights: ► Thin film-oxide dielectric-organic electrode interface studies for investigating the leakage mechanism. ► XPS to elucidate chemical-structural changes on dielectric oxide surface. ► Correlates structural characterization data with capacitor leakage current and impedance spectroscopy characteristics. - Abstract: This paper aims at understanding the interaction of intrinsic conducting polymer, PEDT, with ALD-deposited Al 2 O 3 and thermally oxidized Ta 2 O 5 dielectrics, and the underlying mechanisms for increase in leakage currents in PEDT-based capacitors. Conducting polymers offer several advantages as electrodes for high surface area capacitors because of their lower resistance, self-healing and enhanced conformality. However, capacitors with in situ polymerized PEDT show poor electrical properties that are attributed to the interfacial interaction between the organic electrode and the oxide dielectric. This study focuses on characterizing these interactions. A combination of compositional, structural and electrical characterization techniques was applied to polymer-solid-state-capacitor to understand the interfacial chemical behavior and dielectric property deterioration of alumina and tantalum-oxide films. XPS and impedance studies were employed to understand the stiochiometric and compositional changes that occur in the dielectric film on interaction with in situ deposited PEDT. Based on the observations from several complimentary techniques, it is concluded that tantalum-pentoxide has more resistance towards chemical interaction with in situ polymerized PEDT. The thermally oxidized Ta 2 O 5 -PEDT system showed leakage current of 280 nA μF −1 at 3 V with a breakdown voltage of 30 V. On the other hand, Al 2 O 3 -PEDT capacitor showed leakage current of 50 μA μF −1 and a breakdown voltage of 40 V. The study reports direct evidence for the mechanism of resistivity drop in alumina dielectric with in situ polymerized PEDT electrode.

  3. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.; Abdelghany, Mohamed A.; Elsayed, Mohannad Yomn; Elshurafa, Amro M; Salama, Khaled N.

    2014-01-01

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  4. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  5. Linear theory of a dielectric-loaded rectangular Cerenkov maser with a sheet electron beam

    International Nuclear Information System (INIS)

    Chen Ye; Wan Xiao-Sheng; Zhao Ding; Liu Wen-Xin; Wang Yong

    2012-01-01

    A three-dimensional model of a dielectric-loaded rectangular Cerenkov maser with a sheet electron beam for the beam-wave interaction is proposed. Based on this model, the hybrid-mode dispersion equation is derived with the Borgnis potential function by using the field-matching method. Its approximate solution is obtained under the assumption of a dilute electron beam. By using the Ansoft high frequency structural simulator (HFSS) code, the electromagnetic field distribution in the interaction structure is given. Through numerical calculations, the effects of beam thickness, beam and dielectric-layer gap distance, beam voltage, and current density on the resonant growth rate are analysed in detail

  6. Role of secondary emission on discharge dynamics in an atmospheric pressure dielectric barrier discharge

    Energy Technology Data Exchange (ETDEWEB)

    Tay, W. H.; Kausik, S. S.; Yap, S. L.; Wong, C. S., E-mail: cswong@um.edu.my [Plasma Technology Research Centre, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2014-04-15

    The discharge dynamics in an atmospheric pressure dielectric barrier discharge (DBD) is studied in a DBD reactor consisting of a pair of stainless steel parallel plate electrodes. The DBD discharge has been generated by a 50 Hz ac high voltage power source. The high-speed intensified charge coupled device camera is used to capture the images of filaments occurring in the discharge gap. It is observed that frequent synchronous breakdown of micro discharges occurs across the discharge gap in the case of negative current pulse. The experimental results reveal that secondary emissions from the dielectric surface play a key role in the synchronous breakdown of plasma filaments.

  7. Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bagraev, N. T., E-mail: bagraev@mail.ioffe.ru [St. Petersburg Polytechnic University (Russian Federation); Chernev, A. L. [Russian Academy of Sciences, St. Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation); Klyachkin, L. E. [St. Petersburg Polytechnic University (Russian Federation); Malyarenko, A. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Emel’yanov, A. K.; Dubina, M. V. [Russian Academy of Sciences, St. Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation)

    2016-10-15

    Planar silicon nanostructures that are formed as a very narrow silicon quantum well confined by δ barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides deposited onto the surface of the nanostructures. The capacitance characteristics of the silicon nanostructures with oligonucleotides deposited onto their surface are determined by recording the local tunneling current–voltage characteristics by means of scanning tunneling microscopy. The results show the possibility of identifying the local dielectric properties of DNA oligonucleotide segments consisting of repeating G–C pairs. These properties apparently give grounds to correlate the segments with polymer molecules exhibiting the properties of multiferroics.

  8. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  9. Increased voltage photovoltaic cell

    Science.gov (United States)

    Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

    1985-01-01

    A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

  10. Electric Conductivity and Dielectric-Breakdown Behavior for Polyurethane Magnetic Elastomers.

    Science.gov (United States)

    Sasaki, Shuhei; Tsujiei, Yuri; Kawai, Mika; Mitsumata, Tetsu

    2017-02-23

    The electric-voltage dependence of the electric conductivity for cross-linked and un-cross-linked magnetic elastomers was measured at various magnetic fields, and the effect of cross-linking on the electric conductivity and the dielectric-breakdown behavior was investigated. The electric conductivity for un-cross-linked elastomers at low voltages was independent of magnetic fields and the volume fraction of magnetic particles, indicating the electric conduction in the polyurethane matrix. At high voltages, the electric conductivity increased with the magnetic field, showing the electric conduction via chains of magnetic particles. On the other hand, the electric conductivity at low voltages for cross-linked elastomers with volume fractions below 0.06 was independent of the magnetic field, suggesting the electric conduction in the polyurethane matrix. At volume fractions above 0.14, the electric conductivity increased with the magnetic field, suggesting the electric conduction via chains of magnetic particles. At high voltages, the electric conductivity for cross-linked elastomers with a volume fraction of 0.02 was independent of the magnetic field, indicating the electric conduction through the polyurethane matrix. At volume fractions above 0.06, the electric conductivity suddenly increased at a critical voltage, exhibiting the dielectric breakdown at the bound layer of magnetic particles and/or the discontinuous part between chains.

  11. High Voltage Homemade Capacitor Charger for Plasma Focus System

    International Nuclear Information System (INIS)

    Abdul Halim Baijan; Azaman Ahmad; Rokiah Mohd Sabri; Siti Aiasah Hashim; Mohd Rizal Md Chulan; Wah, L.K.; Azhar Ahmad; Rosli Che Ros; Mohd Faiz Mohd Zin

    2015-01-01

    A high voltage capacitor charger has been designed and built to replace a high voltage charger type General Atomics CCDs Power Supply which was damaged. The fabrication design was using materials which were easily available in the local market. Among the main components of the high-voltage charger is a transformer for neon lights, variable transformer rated 0 - 240 V 1 KVA, and 240 V transformer isolator. The results of experiments that have been conducted shows that a homemade capacitor charger was able to charge high voltage capacitors up to the required voltage of which was 12 kV. However the time taken for charging is quite long, up to more than 6 minutes. (author)

  12. Planning aspects of ac extra high voltage lines

    Energy Technology Data Exchange (ETDEWEB)

    Engelhardt, H

    1964-01-01

    The technical points arising in any project for application of higher voltages on power grids in Europe are discussed. The cost aspects of two alternative ways of extending the voltage level of existing systems are discussed in detail. The short-circuit current in a high-power system with isolated or grounded neutral point and its relation to the mode of grounding is examined. For a transmission distance of 200 kVm, operating cost for each kWh transmitted are shown on curves for voltages of 220, 380 and 700 kV against transmitted energy. This shows that for any rated voltage there is a range of energy values which can be transmitted economically. Factors to be considered in maintaining, selecting or rejecting transformers and switchgear of other systems for higher voltage purposes are mentioned.

  13. Tailoring the Dielectric Layer Structure for Enhanced Performance of Organic Field-Effect Transistors: The Use of a Sandwiched Polar Dielectric Layer

    Directory of Open Access Journals (Sweden)

    Shijiao Han

    2016-07-01

    Full Text Available To investigate the origins of hydroxyl groups in a polymeric dielectric and its applications in organic field-effect transistors (OFETs, a polar polymer layer was inserted between two polymethyl methacrylate (PMMA dielectric layers, and its effect on the performance as an organic field-effect transistor (OFET was studied. The OFETs with a sandwiched dielectric layer of poly(vinyl alcohol (PVA or poly(4-vinylphenol (PVP containing hydroxyl groups had shown enhanced characteristics compared to those with only PMMA layers. The field-effect mobility had been raised more than 10 times in n-type devices (three times in the p-type one, and the threshold voltage had been lowered almost eight times in p-type devices (two times in the n-type. The on-off ratio of two kinds of devices had been enhanced by almost two orders of magnitude. This was attributed to the orientation of hydroxyl groups from disordered to perpendicular to the substrate under gate-applied voltage bias, and additional charges would be induced by this polarization at the interface between the semiconductor and dielectrics, contributing to the accumulation of charge transfer.

  14. Induced voltages in metallic pipelines near power transmission lines

    International Nuclear Information System (INIS)

    Grcev, Leonid; Jankov, Voislav; Filiposki, Velimir

    2002-01-01

    With the continuous development of the electric power system and the pipeline networks used to convey oil or natural gas, cases of close proximity of high voltage structures and metallic pipelines become more and more frequent. Accordingly there is a growing concern about possible hazards resulting from voltages induced in the metallic pipelines by magnetic coupling with nearby power transmission lines. This paper presents a methodology for computation of the induced voltages in buried isolated metallic pipelines. A practical example of computation is also presented. (Author)

  15. Dielectric response of fully and partially depleted ferroelectric thin films and inversion of the thickness effect

    International Nuclear Information System (INIS)

    Misirlioglu, I B; Yildiz, M

    2013-01-01

    We study the effect of full and partial depletion on the dielectric response characteristics of ferroelectric thin films with impurities via a computational approach. Using a thermodynamic approach along with the fundamental equations for semiconductors, we show that films with partial depletion display unique features and an enhanced dielectric response compared with those fully depleted. We find that the capacitance peak at switching can be significantly suppressed in the case of high impurity densities (>10 25 m −3 ) with relatively low ionization energy, of the order of 0.5 eV. For conserved number of species in films, electromigration of ionized impurities at room temperature is negligible and has nearly no effect on the dielectric response. In films with high impurity density, the dielectric response at zero bias is enhanced with respect to charge-free films or those with relatively low impurity density ( 24 m −3 ). We demonstrate that partially depleted films should be expected to exhibit peculiar capacitance–voltage characteristics at low and high bias and that the thickness effect probed in experiments in ferroelectric thin films could be entirely inverted in thin films with depletion charges where a higher dielectric response can be measured in thicker films. Therefore, depletion charge densities in ferroelectric thin films should be estimated before size-effect-related studies. Finally, we noted that these findings are in good qualitative agreement with dielectric measurements carried out on PbZr x Ti 1−x O 3 . (paper)

  16. Dielectric response of capacitor structures based on PZT annealed at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kamenshchikov, Mikhail V., E-mail: Mikhailkamenshchikov@yandex.ru [Tver State University, 170002, Tver (Russian Federation); Solnyshkin, Alexander V. [Tver State University, 170002, Tver (Russian Federation); Pronin, Igor P. [Ioffe Institute, 194021, St. Petersburg (Russian Federation)

    2016-12-09

    Highlights: • Correlation of the microstructure of PZT films and dielectric response was found. • Difference of dielectric responses under low and high bias is caused by domains. • Internal fields is discussed on the basis of the space charges. • Dependences of PZT films characteristics on synthesis temperature are extremal. - Abstract: Dielectric response of thin-film capacitor structures of Pt/PZT/Pt deposited by the RF magnetron sputtering method and annealed at temperatures of 540–570 °C was investigated. It was found that dielectric properties of these structures depend on the synthesis temperature. Stability of a polarized state is considered on the basis of the analysis of hysteresis loops and capacitance–voltage (C–V) characteristics. The contribution of the domain mechanism in the dielectric response of the capacitor structure comprising a ferroelectric is discussed. Extreme dependences of electrophysical characteristics of PZT films on their synthesis temperature were observed. Correlation of dielectric properties with microstructure of these films is found out.

  17. Suppressing voltage transients in high voltage power supplies

    International Nuclear Information System (INIS)

    Lickel, K.F.; Stonebank, R.

    1979-01-01

    A high voltage power supply for an X-ray tubes includes voltage adjusting means, a high voltage transformer, switch means connected to make and interrupt the primary current of the transformer, and over-voltage suppression means to suppress the voltage transient produced when the current is switched on. In order to reduce the power losses in the suppression means, an impedance is connected in the transformer primary circuit on operation of the switch means and is subsequently short-circuited by a switch controlled by a timer after a period which is automatically adjusted to the duration of the transient overvoltage. (U.K.)

  18. Benchmarking of Voltage Sag Generators

    DEFF Research Database (Denmark)

    Yang, Yongheng; Blaabjerg, Frede; Zou, Zhixiang

    2012-01-01

    The increased penetration of renewable energy systems, like photovoltaic and wind power systems, rises the concern about the power quality and stability of the utility grid. Some regulations for Low Voltage Ride-Through (LVRT) for medium voltage or high voltage applications, are coming into force...

  19. Charge-pump voltage converter

    Science.gov (United States)

    Brainard, John P [Albuquerque, NM; Christenson, Todd R [Albuquerque, NM

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  20. Analysis of the error of the developed method of determination the active conductivity reducing the insulation level between one phase of the network and ground, and insulation parameters in a non-symmetric network with isolated neutral with voltage above 1000 V

    Science.gov (United States)

    Utegulov, B. B.

    2018-02-01

    In the work the study of the developed method was carried out for reliability by analyzing the error in indirect determination of the insulation parameters in an asymmetric network with an isolated neutral voltage above 1000 V. The conducted studies of the random relative mean square errors show that the accuracy of indirect measurements in the developed method can be effectively regulated not only by selecting a capacitive additional conductivity, which are connected between phases of the electrical network and the ground, but also by the selection of measuring instruments according to the accuracy class. When choosing meters with accuracy class of 0.5 with the correct selection of capacitive additional conductivity that are connected between the phases of the electrical network and the ground, the errors in measuring the insulation parameters will not exceed 10%.

  1. High Voltage Bi-directional Flyback Converter for Capacitive Actuator

    DEFF Research Database (Denmark)

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    in the converter, including the most dominating parameters of the high voltage transformer viz., self-capacitance and leakage inductance. The specific capacitive load for this converter is a dielectric electro active polymer (DEAP) actuator, which can be used as an effective replacement for conventional actuators...... in a number of applications. In this paper, the discharging energy efficiency definition is introduced. The proposed converter has been experimentally tested with the film capacitive load and the DEAP actuator, and the experimental results are shown together with the efficiency measurements....

  2. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  3. Materials Fundamentals of Gate Dielectrics

    CERN Document Server

    Demkov, Alexander A

    2006-01-01

    This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discont...

  4. Laser amplification in excited dielectrics

    Science.gov (United States)

    Winkler, Thomas; Haahr-Lillevang, Lasse; Sarpe, Cristian; Zielinski, Bastian; Götte, Nadine; Senftleben, Arne; Balling, Peter; Baumert, Thomas

    2018-01-01

    Wide-bandgap dielectrics such as glasses or water are transparent at visible and infrared wavelengths. This changes when they are exposed to ultrashort and highly intense laser pulses. Different interaction mechanisms lead to the appearance of various transient nonlinear optical phenomena. Using these, the optical properties of dielectrics can be controlled from the transparent to the metal-like state. Here we expand this range by a yet unexplored mechanism in excited dielectrics: amplification. In a two-colour pump-probe experiment, we show that a 400 nm femtosecond laser pulse is coherently amplified inside an excited sapphire sample on a scale of a few micrometres. Simulations strongly support the proposed two-photon stimulated emission process, which is temporally and spatially controllable. Consequently, we expect applications in all fields that demand strongly localized amplification.

  5. Dielectric function of semiconductor superlattice

    International Nuclear Information System (INIS)

    Qin Guoyi.

    1990-08-01

    We present a calculation of the dielectric function for semiconductor GaAs/Ga 1-x Al x As superlattice taking account of the extension of the electron envelope function and the difference of both the dielectric constant and width between GaAs and Ga 1-x Al x As layers. In the appropriate limits, our results exactly reduce to the well-known results of the quasi two-dimensional electron gas obtained by Lee and Spector and of the period array of two-dimensional electron layers obtained by Das Sarma and Quinn. By means of the dielectric function of the superlattice, the dispersion relation of the collective excitation and the screening property of semiconductor superlattice are discussed and compared with the results of the quasi two-dimensional system and with the results of the periodic array of the two-dimensional electron layers. (author). 4 refs, 3 figs

  6. Dielectric barrier discharge in a two-phase mixture

    Energy Technology Data Exchange (ETDEWEB)

    Ye Qizheng; Zhang Ting; Lu Fei; Li Jin; He Zhenghao; Lin Fuchang [College of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2008-01-21

    This paper reports the experimental investigation of the dielectric barrier discharge in which the gap area is filled with a two-phase mixture (TPM), air and solid particles. We found that there are two kinds of discharges in the TPM. One is the surface discharge generated on the surface of the solid particles and the other is the filament discharge generated in the air void. For the case of low volume fraction of solid particles, the surface discharge starts to occur when the applied voltage is higher than the onset voltage. At a further voltage increase, the filament discharge takes place at the same time. For the case of high volume fraction, such as the packed-bed reactor, only the surface discharge exists. Under the condition of the same volume fraction, the larger the diameter of the solid particles, the lower the surface discharge onset voltage. As a conclusion, we think that the plasma reactor using the form of low volume fraction of solid particles may be a better choice for waste-gas treatment enhanced by catalysts.

  7. A survey on dielectric elastomer actuators for soft robots.

    Science.gov (United States)

    Gu, Guo-Ying; Zhu, Jian; Zhu, Li-Min; Zhu, Xiangyang

    2017-01-23

    Conventional industrial robots with the rigid actuation technology have made great progress for humans in the fields of automation assembly and manufacturing. With an increasing number of robots needing to interact with humans and unstructured environments, there is a need for soft robots capable of sustaining large deformation while inducing little pressure or damage when maneuvering through confined spaces. The emergence of soft robotics offers the prospect of applying soft actuators as artificial muscles in robots, replacing traditional rigid actuators. Dielectric elastomer actuators (DEAs) are recognized as one of the most promising soft actuation technologies due to the facts that: i) dielectric elastomers are kind of soft, motion-generating materials that resemble natural muscle of humans in terms of force, strain (displacement per unit length or area) and actuation pressure/density; ii) dielectric elastomers can produce large voltage-induced deformation. In this survey, we first introduce the so-called DEAs emphasizing the key points of working principle, key components and electromechanical modeling approaches. Then, different DEA-driven soft robots, including wearable/humanoid robots, walking/serpentine robots, flying robots and swimming robots, are reviewed. Lastly, we summarize the challenges and opportunities for the further studies in terms of mechanism design, dynamics modeling and autonomous control.

  8. Resonant wave energy harvester based on dielectric elastomer generator

    Science.gov (United States)

    Moretti, Giacomo; Pietro Rosati Papini, Gastone; Righi, Michele; Forehand, David; Ingram, David; Vertechy, Rocco; Fontana, Marco

    2018-03-01

    Dielectric elastomer generators (DEGs) are a class of capacitive solid-state devices that employ highly stretchable dielectrics and conductors to convert mechanical energy into high-voltage direct-current electricity. Their promising performance in terms of convertible energy and power density has been mostly proven in quasi-static experimental tests with prescribed deformation. However, the assessment of their ability in harvesting energy from a dynamic oscillating source of mechanical energy is crucial to demonstrate their effectiveness in practical applications. This paper reports a first demonstration of a DEG system that is able to convert the oscillating energy carried by water waves into electricity. A DEG prototype is built using a commercial polyacrylate film (VHB 4905 by 3M) and an experimental campaign is conducted in a wave-flume facility, i.e. an artificial basin that makes it possible to generate programmed small-scale waves at different frequencies and amplitudes. In resonant conditions, the designed system demonstrates the delivery of a maximum of 0.87 W of electrical power output and 0.64 J energy generated per cycle, with corresponding densities per unit mass of dielectric elastomer of 197 W kg-1 and 145 J kg-1. Additionally, a notable maximum fraction of 18% of the input wave energy is converted into electricity. The presented results provide a promising demonstration of the operation and effectiveness of ocean wave energy converters based on elastic capacitive generators.

  9. Capacitive Cells for Dielectric Constant Measurement

    Science.gov (United States)

    Aguilar, Horacio Munguía; Maldonado, Rigoberto Franco

    2015-01-01

    A simple capacitive cell for dielectric constant measurement in liquids is presented. As an illustrative application, the cell is used for measuring the degradation of overheated edible oil through the evaluation of their dielectric constant.

  10. Dielectric behaviour of strontium tartrate single crystals

    Indian Academy of Sciences (India)

    Unknown

    dielectric loss (tan δ) as functions of frequency and temperature. Ion core type ... Since the data on dielectric properties of strontium tartrate trihydrate (STT) do not ... through 'AE' make 15-amp dimmerstat, the rate of heating was maintained ...

  11. The Dielectric Constant of Lubrication Oils

    National Research Council Canada - National Science Library

    Carey, A

    1998-01-01

    The values of the dielectric constant of simple molecules is discussed first, along with the relationship between the dielectric constant and other physical properties such as boiling point, melting...

  12. Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

    DEFF Research Database (Denmark)

    Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

    2017-01-01

    This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... optimization. The proposed method is used to calculate the voltage bands and droop settings of PV inverters at each node by the supervisory controller. The local controller of each PV inverter implements the volt/var control and if necessary, the active power curtailment as per the received settings and based...... on measured local voltages. The advantage of the proposed method is that the calculated reactive power and active power droop settings enable fair contribution of the PV inverters at each node to the voltage regulation. Simulation studies are conducted using DigSilent Power factory software on a simplified...

  13. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on tunable functionalized copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2015-01-01

    system, with respect to functionalization, is achieved. It is investigated how the different functionalization variables affect essential DE properties, including dielectric permittivity, dielectric loss, elastic modulus and dielectric breakdown strength, and the optimal degree of chemical......%) was obtained without compromising other vital DE properties such as elastic modulus, gel fraction, dielectric and viscous loss and electrical breakdown strength....

  14. Model and design of dielectric elastomer minimum energy structures

    International Nuclear Information System (INIS)

    Rosset, Samuel; Araromi, Oluwaseun A; Shintake, Jun; Shea, Herbert R

    2014-01-01

    Fixing a prestretched dielectric elastomer actuator (DEA) on a flexible frame allows transformation of the intrinsic in-plane area expansion of DEAs into complex three-dimensional (3D) structures whose shape is determined by a configuration that minimizes the elastic energy of the actuator and the bending energy of the frame. These stuctures can then unfold upon the application of a voltage. This article presents an analytical modelling of the dielectric elastomer minimal energy structure in the case of a simple rectangular geometry and studies the influence of the main design parameters on the actuator's behaviour. The initial shape of DEMES, as well as the actuation range, depends on the elastic strain energy stored in the elastomeric membrane. This energy depends on two independent parameters: the volume of the membrane and its initial deformation. There exist therefore different combinations of membrane volume and prestretch, which lead to the same initial shape, such as a highly prestretched thin membrane, or a slightly prestretched thick membrane. Although they have the same initial shape, these different membrane states lead to different behaviour once the actuation voltage is applied. Our model allows one to predict which choice of parameters leads to the largest actuation range, while specifying the impact of the different membrane conditions on the spring constant of the device. We also explore the effects of non-ideal material behaviour, such as stress relaxation, on device performance. (paper)

  15. Geometric phase from dielectric matrix

    International Nuclear Information System (INIS)

    Banerjee, D.

    2005-10-01

    The dielectric property of the anisotropic optical medium is found by considering the polarized photon as two component spinor of spherical harmonics. The Geometric Phase of a polarized photon has been evaluated in two ways: the phase two-form of the dielectric matrix through a twist and the Pancharatnam phase (GP) by changing the angular momentum of the incident polarized photon over a closed triangular path on the extended Poincare sphere. The helicity in connection with the spin angular momentum of the chiral photon plays the key role in developing these phase holonomies. (author)

  16. Enhanced dielectric properties of ZrO2 thin films prepared in nitrogen ambient by pulsed laser deposition

    International Nuclear Information System (INIS)

    Zhu, J; Li, T L; Pan, B; Zhou, L; Liu, Z G

    2003-01-01

    ZrO 2 thin films were fabricated in O 2 ambient and in N 2 ambient by pulsed laser deposition (PLD), respectively. X-ray diffraction revealed that films prepared at 400 deg. C remained amorphous. The dielectric properties of amorphous ZrO 2 films were investigated by measuring the capacitance-frequency characteristics of Pt/ZrO 2 /Pt capacitor structures. The dielectric constant of the films deposited in N 2 ambient was larger than that of the films deposited in O 2 ambient. The dielectric loss was lower for films prepared in N 2 ambient. Atom force microscopy investigation indicated that films deposited in N 2 ambient had smoother surface than films deposited in O 2 ambient. Capacitance-voltage and current-voltage characteristics were studied. The equivalent oxide thickness (EOT) of films with 6.6 nm physical thickness deposited in N 2 ambient is lower than that of films deposited in O 2 ambient. An EOT of 1.38 nm for the film deposited in N 2 ambient was obtained, while the leakage current density was 94.6 mA cm -2 . Therefore, ZrO 2 thins deposited in N 2 ambient have enhanced dielectric properties due to the incorporation of nitrogen which leads to the formation of Zr-doped nitride interfacial layer, and is suggested to be a potential material for alternative high-k (high dielectric constant) gate dielectric applications

  17. Charge accumulation in lossy dielectrics: a review

    DEFF Research Database (Denmark)

    Rasmussen, Jørgen Knøster; McAllister, Iain Wilson; Crichton, George C

    1999-01-01

    At present, the phenomenon of charge accumulation in solid dielectrics is under intense experimental study. Using a field theoretical approach, we review the basis for charge accumulation in lossy dielectrics. Thereafter, this macroscopic approach is applied to planar geometries such that the mat......At present, the phenomenon of charge accumulation in solid dielectrics is under intense experimental study. Using a field theoretical approach, we review the basis for charge accumulation in lossy dielectrics. Thereafter, this macroscopic approach is applied to planar geometries...

  18. Sensing voltage across lipid membranes

    Science.gov (United States)

    Swartz, Kenton J.

    2009-01-01

    The detection of electrical potentials across lipid bilayers by specialized membrane proteins is required for many fundamental cellular processes such as the generation and propagation of nerve impulses. These membrane proteins possess modular voltage-sensing domains, a notable example being the S1-S4 domains of voltage-activated ion channels. Ground-breaking structural studies on these domains explain how voltage sensors are designed and reveal important interactions with the surrounding lipid membrane. Although further structures are needed to fully understand the conformational changes that occur during voltage sensing, the available data help to frame several key concepts that are fundamental to the mechanism of voltage sensing. PMID:19092925

  19. Modeling shape selection of buckled dielectric elastomers

    Science.gov (United States)

    Langham, Jacob; Bense, Hadrien; Barkley, Dwight

    2018-02-01

    A dielectric elastomer whose edges are held fixed will buckle, given a sufficiently applied voltage, resulting in a nontrivial out-of-plane deformation. We study this situation numerically using a nonlinear elastic model which decouples two of the principal electrostatic stresses acting on an elastomer: normal pressure due to the mutual attraction of oppositely charged electrodes and tangential shear ("fringing") due to repulsion of like charges at the electrode edges. These enter via physically simplified boundary conditions that are applied in a fixed reference domain using a nondimensional approach. The method is valid for small to moderate strains and is straightforward to implement in a generic nonlinear elasticity code. We validate the model by directly comparing the simulated equilibrium shapes with the experiment. For circular electrodes which buckle axisymetrically, the shape of the deflection profile is captured. Annular electrodes of different widths produce azimuthal ripples with wavelengths that match our simulations. In this case, it is essential to compute multiple equilibria because the first model solution obtained by the nonlinear solver (Newton's method) is often not the energetically favored state. We address this using a numerical technique known as "deflation." Finally, we observe the large number of different solutions that may be obtained for the case of a long rectangular strip.

  20. Dielectric polymer: scavenging energy from human motion

    Science.gov (United States)

    Jean-Mistral, Claire; Basrour, Skandar; Chaillout, Jean-Jacques

    2008-03-01

    More and more sensors are embedded in human body for medical applications, for sport. The short lifetime of the batteries, available on the market, reveals a real problem of autonomy of these systems. A promising alternative is to scavenge the ambient energy such as the mechanical one. Up to now, few scavenging structures have operating frequencies compatible with ambient one. And, most of the developed structures are rigid and use vibration as mechanical source. For these reasons, we developed a scavenger that operates in a large frequency spectrum from quasi-static to dynamic range. This generator is fully flexible, light and does not hamper the human motion. Thus, we report in this paper an analytical model for dielectric generator with news electrical and mechanical characterization, and the development of an innovating application: scavenging energy from human motion. The generator is located on the knee and design to scavenge 0.1mJ per scavenging cycle at a frequency of 1Hz, enough to supply a low consumption system and with a poling voltage as low as possible to facilitate the power management. Our first prototype is a membrane with an area of 5*3cm and 31µm in thickness which scavenge 0.1mJ under 170V at constant charge Q.

  1. Self-organization of single filaments and diffusive plasmas during a single pulse in dielectric-barrier discharges

    International Nuclear Information System (INIS)

    Babaeva, Natalia Yu; Kushner, Mark J

    2014-01-01

    Self-organization of filaments in dielectric-barrier discharges (DBDs) probably has many origins. However, the dominant cause is proposed to be the accumulation of charge on the surfaces of the bounding dielectrics that reinforces successive discharge pulses to occur at the same locations. A secondary cause is the electrostatic repulsion of individual plasma filaments. Self-organization typically develops over many discharge pulses. In this paper, we discuss the results of a computational investigation of plasma filaments in overvoltage DBDs that, under select conditions, display self-organized patterns (SOPs) of plasma density during a single discharge pulse. (Overvoltage refers to the rapid application of a voltage in excess of the quasi-dc breakdown voltage.) The origin of the SOPs is a synergistic relationship between the speed of the surface-ionization waves that propagate along each dielectric and the rate at which avalanche occurs across the gap. For our test conditions, SOPs were not observed at lower voltages and gradually formed at higher voltages. The same conditions that result in SOPs, i.e. the application of an overvoltage, also produce more diffuse discharges. A transition from a single narrow filament to a more diffuse structure was observed as overvoltage was approached. The sensitivity of SOPs to the orientation and permittivity of the bounding dielectrics is discussed. (paper)

  2. Correlation between the dielectric properties and biological activities of human ex vivo hepatic tissue

    International Nuclear Information System (INIS)

    Wang, Hang; You, Fusheng; Fu, Feng; Dong, Xiuzhen; Shi, Xuetao; He, Yong; Yang, Min; Yan, Qingguo

    2015-01-01

    Dielectric properties are vital biophysical features of biological tissues, and biological activity is an index to ascertain the active state of tissues. This study investigated the potential correlation between the dielectric properties and biological activities of human hepatic tissue with prolonged ex vivo time through correlation and regression analyses. The dielectric properties of 26 cases of normal human hepatic tissue at 10 Hz to 100 MHz were measured from 15 min after isolation to 24 h at 37 °C with 90% humidity. Cell morphologies, including nucleus area (NA) and alteration rate of intercellular area (ICAR), were analyzed as indicators of biological activities. Conductivity, complex resistivity, and NA exhibited opposing changes 1 h after isolation. Relative permittivity and ex vivo time were not closely correlated (p > 0.05). The dielectric properties measured at low frequencies (i.e. <1 MHz) were more sensitive than those measured at high frequencies in reflecting the biological activity of ex vivo tissue. Highly significant correlations were found between conductivity, resistivity and the ex vivo time (p < 0.05) as well as conductivity and the cell morphology (p < 0.05). The findings indicated that establishing the correlation between the dielectric properties and biological activities of human hepatic tissue is of great significance for promoting the role of dielectric properties in biological science, particularly in human biology. (paper)

  3. Cellulose Triacetate Dielectric Films For Capacitors

    Science.gov (United States)

    Yen, Shiao-Ping S.; Jow, T. Richard

    1994-01-01

    Cellulose triacetate investigated for use as dielectric material in high-energy-density capacitors for pulsed-electrical-power systems. Films of cellulose triacetate metalized on one or both sides for use as substrates for electrodes and/or as dielectrics between electrodes in capacitors. Used without metalization as simple dielectric films. Advantages include high breakdown strength and self-healing capability.

  4. CMOS-compatible high-voltage integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Parpia, Z

    1988-01-01

    Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

  5. Cavallo's multiplier for in situ generation of high voltage

    Science.gov (United States)

    Clayton, S. M.; Ito, T. M.; Ramsey, J. C.; Wei, W.; Blatnik, M. A.; Filippone, B. W.; Seidel, G. M.

    2018-05-01

    A classic electrostatic induction machine, Cavallo's multiplier, is suggested for in situ production of very high voltage in cryogenic environments. The device is suitable for generating a large electrostatic field under conditions of very small load current. Operation of the Cavallo multiplier is analyzed, with quantitative description in terms of mutual capacitances between electrodes in the system. A demonstration apparatus was constructed, and measured voltages are compared to predictions based on measured capacitances in the system. The simplicity of the Cavallo multiplier makes it amenable to electrostatic analysis using finite element software, and electrode shapes can be optimized to take advantage of a high dielectric strength medium such as liquid helium. A design study is presented for a Cavallo multiplier in a large-scale, cryogenic experiment to measure the neutron electric dipole moment.

  6. Through thick and thin: tuning the threshold voltage in organic field-effect transistors.

    Science.gov (United States)

    Martínez Hardigree, Josué F; Katz, Howard E

    2014-04-15

    Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more

  7. Bias Voltage-Dependent Impedance Spectroscopy Analysis of Hydrothermally Synthesized ZnS Nanoparticles

    Science.gov (United States)

    Dey, Arka; Dhar, Joydeep; Sil, Sayantan; Jana, Rajkumar; Ray, Partha Pratim

    2018-04-01

    In this report, bias voltage-dependent dielectric and electron transport properties of ZnS nanoparticles were discussed. ZnS nanoparticles were synthesized by introducing a modified hydrothermal process. The powder XRD pattern indicates the phase purity, and field emission scanning electron microscope image demonstrates the morphology of the synthesized sample. The optical band gap energy (E g = 4.2 eV) from UV measurement explores semiconductor behavior of the synthesized material. The electrical properties were performed at room temperature using complex impedance spectroscopy (CIS) technique as a function of frequency (40 Hz-10 MHz) under different forward dc bias voltages (0-1 V). The CIS analysis demonstrates the contribution of bulk resistance in conduction mechanism and its dependency on forward dc bias voltages. The imaginary part of the impedance versus frequency curve exhibits the existence of relaxation peak which shifts with increasing dc forward bias voltages. The dc bias voltage-dependent ac and dc conductivity of the synthesized ZnS was studied on thin film structure. A possible hopping mechanism for electrical transport processes in the system was investigated. Finally, it is worth to mention that this analysis of bias voltage-dependent dielectric and transport properties of as-synthesized ZnS showed excellent properties for emerging energy applications.

  8. Heat-pump performance: voltage dip/sag, under-voltage and over-voltage

    Directory of Open Access Journals (Sweden)

    William J.B. Heffernan

    2014-12-01

    Full Text Available Reverse cycle air-source heat-pumps are an increasingly significant load in New Zealand and in many other countries. This has raised concern over the impact wide-spread use of heat-pumps may have on the grid. The characteristics of the loads connected to the power system are changing because of heat-pumps. Their performance during under-voltage events such as voltage dips has the potential to compound the event and possibly cause voltage collapse. In this study, results from testing six heat-pumps are presented to assess their performance at various voltages and hence their impact on voltage stability.

  9. Dielectric waveguide amplifiers and lasers

    NARCIS (Netherlands)

    Pollnau, Markus

    The performance of semiconductor amplifiers and lasers has made them the preferred choice for optical gain on a micro-chip. In the past few years, we have demonstrated that also rare-earth-ion-doped dielectric waveguides show remarkable performance, ranging from a small-signal gain per unit length

  10. Dielectric properties of fly ash

    Indian Academy of Sciences (India)

    Unknown

    India's annual coal production is used in about 72 power- generating plants and ... performance of this material as cracking catalyst was investigated with ... Chemically, the FA was silica to an extent of 55–70%, followed by ... Cu, Pb, Cd, Ag, Mn, Fe, Ti, Na, Mo, S, P, Zn and Cl in different ... two-probe method. The dielectric ...

  11. Dielectric polarization in random media

    International Nuclear Information System (INIS)

    Ramshaw, J.D.

    1984-01-01

    The theory of dielectric polarization in random media is systematically formulated in terms of response kernels. The primary response kernel K(12) governs the mean dielectric response at the point r 1 to the external electric field at the point r 2 in an infinite system. The inverse of K(12) is denoted by L(12);. it is simpler and more fundamental than K(12) itself. Rigorous expressions are obtained for the effective dielectric constant epsilon( in terms of L(12) and K(12). The latter expression involves the Onsger-Kirkwood function (epsilon(-epsilon 0 (2epsilon(+epsilon 0 )/epsilon 0 epsilon( (where epsilon 0 is an arbitrary reference value), and appears to be new to the random medium context. A wide variety of series representations for epsilon( are generated by means of general perturbation expansions for K(12) and L(12). A discussion is given of certain pitfalls in the theory, most of which are related to the fact that the response kernels are long ranged. It is shown how the dielectric behavior of nonpolar molecular fluids may be treated as a special case of the general theory. The present results for epsilon( apply equally well to other effective phenomenological coefficients of the same generic type, such as thermal and electrical conductivity, magnetic susceptibility, and diffusion coefficients

  12. Improved di-electric composition

    Energy Technology Data Exchange (ETDEWEB)

    Sharp, R C

    1915-03-29

    An improved di-electric composition is disclosed composed of pitch or bitumen which is melted, and to which is added, while molten, a quantity of finely ground or pulverized spent shale, the whole being mixed or stirred to make a homogeneous composition, substantially as described.

  13. Experimental study of surface dielectric barrier discharge in air and its ozone production

    International Nuclear Information System (INIS)

    Pekárek, Stanislav

    2012-01-01

    For surface dielectric barrier discharge in air we studied the effects of frequency of the driving voltage on dissipated power, asymmetry of amplitudes of the discharge voltage, discharge UV emission, ozone production, ozone production of the discharge with TiO 2 and of the discharge in magnetic field. We found that for a particular voltage the dissipated power is higher for the frequency of the driving voltage of 26.3 kHz than for the frequency of 10.9 kHz; peak values of the positive half-periods of the discharge voltage are higher than peak values of the negative half-periods; intensity of the discharge UV emissions for wavelengths of 320-420 nm is for both frequencies a linear function of power; maximum ozone concentration for the frequency of the driving voltage of 26.3 kHz is obtained with smaller power than for the frequency of 10.9 kHz; placement of TiO 2 particles into the discharge chamber increases for both frequencies of the driving voltage maximum ozone concentration produced by the discharge and for the frequency of the driving voltage of 26.3 kHz increases ozone production yield. Finally, there is no observable effect of magnetic field on concentration of ozone produced by the discharge as well as on production yield. (paper)

  14. Characterization of vertical strain silicon MOSFET incorporating dielectric pocket (SDP-VMOSFET)

    Energy Technology Data Exchange (ETDEWEB)

    Napiah, Z. A. F. M., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Makhtar, N., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Othman, M. A., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Idris, M. I., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Arith, F., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Yasin, N. Y. M., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com; Taib, S. N., E-mail: zulatfyi@utem.edu.my, E-mail: nazirah6969@gmail.com, E-mail: azlishah@utem.edu.my, E-mail: idzdihar@utem.edu.my, E-mail: faiz.arith@utem.edu.my, E-mail: yashidar@yahoo.com, E-mail: sitinabilahtaib@gmail.com [Centre for Telecommunication Research and Innovation (CeTRI), Faculty of Electronic and Computer Engineering, Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka (Malaysia)

    2014-02-24

    The vertical Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) leads to a double channel width that can increase the packaging density. The strained silicon MOSFET was introduced to modify the carrier transport properties of silicon in order to enhance transport of both electrons and holes within strained layer. Dielectric pocket was act to control encroachment of the drain doping into the channel and reduce short channel effects (SCE). SDP-VMOSFET which was a combination of those advantages was proposed to overcome the SCE in term of leakage current, threshold voltage roll-off also Drain Induce Barrier Lowering (DIBL). As a result, SDP-VMOSFET produces a better threshold voltage and DIBL compared to related structures. Meanwhile, it gives slightly increased for leakage current compared to Vertical MOSFET Incorporating Dielectric Pocket. The characteristics of the SDP-VMOSFET are analyzed in order to optimize the performance of the device and leading to the next generation of IC technology.

  15. Characterization of vertical strain silicon MOSFET incorporating dielectric pocket (SDP-VMOSFET)

    International Nuclear Information System (INIS)

    Napiah, Z. A. F. M.; Makhtar, N.; Othman, M. A.; Idris, M. I.; Arith, F.; Yasin, N. Y. M.; Taib, S. N.

    2014-01-01

    The vertical Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) leads to a double channel width that can increase the packaging density. The strained silicon MOSFET was introduced to modify the carrier transport properties of silicon in order to enhance transport of both electrons and holes within strained layer. Dielectric pocket was act to control encroachment of the drain doping into the channel and reduce short channel effects (SCE). SDP-VMOSFET which was a combination of those advantages was proposed to overcome the SCE in term of leakage current, threshold voltage roll-off also Drain Induce Barrier Lowering (DIBL). As a result, SDP-VMOSFET produces a better threshold voltage and DIBL compared to related structures. Meanwhile, it gives slightly increased for leakage current compared to Vertical MOSFET Incorporating Dielectric Pocket. The characteristics of the SDP-VMOSFET are analyzed in order to optimize the performance of the device and leading to the next generation of IC technology

  16. Influence of Gate Dielectrics, Electrodes and Channel Width on OFET Characteristics

    International Nuclear Information System (INIS)

    Liyana, V P; Stephania, A M; Shiju, K; Predeep, P

    2015-01-01

    Organic Field Effect Transistors (OFET) possess wide applications in large area electronics owing to their attractive features like easy fabrication process, light weight, flexibility, cost effectiveness etc. But instability, high operational voltages and low carrier mobility act as inhibitors to commercialization of OFETs and various approaches were tried on a regular basis so as to make it viable. In this work, Poly 3-hexylthiophene-2,5diyl (P3HT) based OFETs with bottom-contact top-gate configuration using Poly vinyl alcohol (PVA) and Poly (methyl methacrylate) (PMMA) as gate dielectrics, aluminium and copper as source-drain electrodes are investigated. An effort is made to compare the effect of these dielectric materials and electrodes on the performance of OFET. Also, an attempt has been made to optimize the channel width of the device. These devices are characterised with mobility (μ), threshold voltage (V T ), on-off ratio (I on /I off ) and their comparative analysis is reported. (paper)

  17. Influence of Gate Dielectrics, Electrodes and Channel Width on OFET Characteristics

    Science.gov (United States)

    Liyana, V. P.; Stephania, A. M.; Shiju, K.; Predeep, P.

    2015-06-01

    Organic Field Effect Transistors (OFET) possess wide applications in large area electronics owing to their attractive features like easy fabrication process, light weight, flexibility, cost effectiveness etc. But instability, high operational voltages and low carrier mobility act as inhibitors to commercialization of OFETs and various approaches were tried on a regular basis so as to make it viable. In this work, Poly 3-hexylthiophene-2,5diyl (P3HT) based OFETs with bottom-contact top-gate configuration using Poly vinyl alcohol (PVA) and Poly (methyl methacrylate) (PMMA) as gate dielectrics, aluminium and copper as source-drain electrodes are investigated. An effort is made to compare the effect of these dielectric materials and electrodes on the performance of OFET. Also, an attempt has been made to optimize the channel width of the device. These devices are characterised with mobility (μ), threshold voltage (VT), on-off ratio (Ion/Ioff) and their comparative analysis is reported.

  18. Temperature-dependent dielectric properties in ITO/AF/Al device

    International Nuclear Information System (INIS)

    Choi, Hyun-Min; Kim, Won-Jong; Lee, Jong-Yong; Hong, Jin-Woong; Kim, Tae-Wan

    2010-01-01

    Temperature-dependent dielectric properties were studied in a device with a structure of ITO/amorphous fluoropolymer (AF)/Al. The AF was thermally deposited at a deposition rate of 0.1 A/s to a thickness of 20 nm under a pressure of 5 x 10 -6 Torr. From the dielectric properties of the device, an equivalent circuit for and the equivalent complex impedance Z eq of the device were obtained. The interfacial resistance was found to be approximately 38 Ω. As the temperature was increased, the radius of the Cole-Cole plot and β also increased for a constant applied voltage. However, as the applied voltage was increased, those values decreased at a constant temperature. These behaviors are thought to be due to an orientational polarization effect of the molecules inside the AF layer.

  19. Post-breakdown secondary discharges at the electrode/dielectric interface of a cylindrical barrier discharge

    Science.gov (United States)

    Carman, Robert; Ward, Barry; Kane, Deborah

    2011-10-01

    The electrical breakdown characteristics of a double-walled cylindrical dielectric barrier discharge (DBD) lamp with a neon buffer gas under pulsed voltage excitation have been investigated. Following the formation of plasma in the main discharge gap, we have observed secondary breakdown phenomena at the inner and outer mesh electrode/dielectric interfaces under specific operating conditions. Plasma formation at these interfaces is investigated by monitoring the Ozone production rate in controlled flows of ultra high purity oxygen together with the overall electrical voltage-charge characteristics of the lamp. The results show that this secondary breakdown only occurs after the main discharge plasma has been established, and that significant electrical power may be dissipated in generating these spurious secondary plasmas. The results are important with regards to optimising the design and identifying efficient operating regimes of DBD based devices that employ mesh-type or wire/strip electrodes.

  20. Investigation of the dielectric properties of shale

    International Nuclear Information System (INIS)

    Martemyanov, Sergey M.

    2011-01-01

    The article is dedicated to investigation of the dielectric properties of oil shale. Investigations for samples prepared from shale mined at the deposit in Jilin Province in China were done. The temperature and frequency dependences of rock characteristics needed to calculate the processes of their thermal processing are investigated. Frequency dependences for the relative dielectric constant and dissipation factor of rock in the frequency range from 0,1 Hz to 1 MHz are investigated. The temperature dependences for rock resistance, dielectric capacitance and dissipation factor in the temperature range from 20 to 600°C are studied. Key words: shale, dielectric properties, relative dielectric constant, dissipation factor, temperature dependence, frequency dependence

  1. Optimisation of Silicone-based Dielectric Elastomer Transducers by Means of Block Copolymers - Synthesis and Compounding

    DEFF Research Database (Denmark)

    A Razak, Aliff Hisyam

    through the use of a multi-walled carbon nanotube (MWCNT) in a PDMS-PEG matrix as a compliant electrode of dielectric elastomers. The conductive PDMS-PEG copolymer was incorporated with surface-treated MWCNT, in order to obtain highly conductive elastomer. The prepared sample with 4 parts per hundred...... enhancing the electrical breakdown strength of silicone by using an aromatic voltage stabiliser. Here, polyphenylmethylsiloxane (PPMS), which contained aromatic voltage stabilisers, was bonded covalently to PDMS through a hydrosilylation reaction obtaining PDMS-PPMS copolymers. The synthesised copolymers...

  2. Contribution to the thermal study of a dielectric barrier discharge reactor

    International Nuclear Information System (INIS)

    Dubus, Nicolas

    2009-01-01

    This thesis aims to study the thermal behaviour of a laboratory Dielectric Barrier Discharge (DBD) reactor. An experimental study was first realized to measure temperatures at different points of the reactor by using optic fibers. These measurements were performed in transient and steady states. To examine the influence of heat losses, not insulated and insulated reactors were considered. The influence of the nature and the form of the applied voltage was else considered. Experiments were conducted with a sinusoidal voltage and a pulsed power supply. (author) [fr

  3. Evaluation of area strain response of dielectric elastomer actuator using image processing technique

    Science.gov (United States)

    Sahu, Raj K.; Sudarshan, Koyya; Patra, Karali; Bhaumik, Shovan

    2014-03-01

    Dielectric elastomer actuator (DEA) is a kind of soft actuators that can produce significantly large electric-field induced actuation strain and may be a basic unit of artificial muscles and robotic elements. Understanding strain development on a pre-stretched sample at different regimes of electrical field is essential for potential applications. In this paper, we report about ongoing work on determination of area strain using digital camera and image processing technique. The setup, developed in house consists of low cost digital camera, data acquisition and image processing algorithm. Samples have been prepared by biaxially stretched acrylic tape and supported between two cardboard frames. Carbon-grease has been pasted on the both sides of the sample, which will be compliant with electric field induced large deformation. Images have been grabbed before and after the application of high voltage. From incremental image area, strain has been calculated as a function of applied voltage on a pre-stretched dielectric elastomer (DE) sample. Area strain has been plotted with the applied voltage for different pre-stretched samples. Our study shows that the area strain exhibits nonlinear relationship with applied voltage. For same voltage higher area strain has been generated on a sample having higher pre-stretched value. Also our characterization matches well with previously published results which have been done with costly video extensometer. The study may be helpful for the designers to fabricate the biaxial pre-stretched planar actuator from similar kind of materials.

  4. Dielectric response of periodic systems from quantum Monte Carlo calculations.

    Science.gov (United States)

    Umari, P; Willamson, A J; Galli, Giulia; Marzari, Nicola

    2005-11-11

    We present a novel approach that allows us to calculate the dielectric response of periodic systems in the quantum Monte Carlo formalism. We employ a many-body generalization for the electric-enthalpy functional, where the coupling with the field is expressed via the Berry-phase formulation for the macroscopic polarization. A self-consistent local Hamiltonian then determines the ground-state wave function, allowing for accurate diffusion quantum Monte Carlo calculations where the polarization's fixed point is estimated from the average on an iterative sequence, sampled via forward walking. This approach has been validated for the case of an isolated hydrogen atom and then applied to a periodic system, to calculate the dielectric susceptibility of molecular-hydrogen chains. The results found are in excellent agreement with the best estimates obtained from the extrapolation of quantum-chemistry calculations.

  5. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Hao [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States)]. E-mail: hao.jiang@wpafb.af.mil; Hong Lianggou [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States); Venkatasubramanian, N. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Grant, John T. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Eyink, Kurt [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Wiacek, Kevin [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Fries-Carr, Sandra [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Enlow, Jesse [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Bunning, Timothy J. [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States)

    2007-02-26

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant ({epsilon} {sub r}) and dielectric loss (tan {delta}) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F {sub b}) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F{sub b} of 610 V/{mu}m, an {epsilon} {sub r} of 3.07, and a tan {delta} of 7.0 x 10{sup -3} at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss.

  6. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    International Nuclear Information System (INIS)

    Jiang Hao; Hong Lianggou; Venkatasubramanian, N.; Grant, John T.; Eyink, Kurt; Wiacek, Kevin; Fries-Carr, Sandra; Enlow, Jesse; Bunning, Timothy J.

    2007-01-01

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant (ε r ) and dielectric loss (tan δ) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F b ) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F b of 610 V/μm, an ε r of 3.07, and a tan δ of 7.0 x 10 -3 at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss

  7. Temporal symmetry of individual filaments in different spatial symmetry filaments pattern in a dielectric barrier discharge

    International Nuclear Information System (INIS)

    Dong, L. F.; Xiao, H.; Fan, W. L.; Yin, Z. Q.; Zhao, H. T.

    2010-01-01

    The temporal behavior of individual filament in different spatial symmetry filaments patterns in dielectric barrier discharge is investigated by using an optical method. A series of return maps of the discharge moments of individual filaments is given. It is found that the temporal symmetry of individual filament changes with the change of the spatial symmetry of filaments pattern as the applied voltage increases. The role of wall charges for this phenomenon is analyzed.

  8. Characterization of a dielectric barrier plasma gun discharging at atmospheric pressure

    International Nuclear Information System (INIS)

    Zhang Guangqiu; Ge Yuanjing; Zhang Yuefei; Chen Guangliang

    2004-01-01

    The authors develop a plasma gun based on dielectric barrier discharge and working at atmospheric pressure. A theoretical model to predict the gun discharge voltage is built, which is in agreement with the experimental results. After investigating the characterization of discharging gun and utilizing it for polymerization, authors find that the gun can be used as a source to generate a stable uniform plasma for different plasma-processing technologies. (author)

  9. Ozone Generation in Dry Air Using Pulsed Discharges With and Without a Solid Dielectric Layer

    OpenAIRE

    Samaranayake, W.J.M.; Miyahara, Y.; Namihira, T.; Katsuki, S.; Hackam, R.; Akiyama, H.; ミヤハラ, Y.; ナミヒラ, タカオ; カツキ, スナオ; アキヤマ, ヒデノリ; 浪平, 隆男; 勝木, 淳; 秋山, 秀典

    2001-01-01

    Energy efficient generation of ozone is very important because ozone is being used increasingly in a wide range of industrial applications. Ozonizers usually use dielectric barrier discharges and employ alternating current (ac) with consequent heat generation, which necessitates cooling. In the present study, very short duration pulsed voltage is employed resulting in reduced heating of the gas and discharge reactor. A comparison of ozone generation in dry air using a coaxial concentric elect...

  10. Dynamics of nonequilibrium conductivity of dielectrics with polaration properties controlled by in ection

    International Nuclear Information System (INIS)

    Arkhipov, V.I.; Rudenko, A.I.

    1979-01-01

    The effect of changes of radiation stimulation permittivity on nonequilibrium conductivity of dielectrics and high-resistance conductors in a radiation field has been studied theoretically. The plane-parallel sample under the constant voltage has been irradiated by penetrating radiation. The uniform radiation caused the transfer the current carriers from traps to the conduction band. The dependence of permittivity on charged traps concentration is shown to lead to negative nonequilibrium conductivity of high-resistance materials

  11. Dielectric breakdown in liquid helium

    International Nuclear Information System (INIS)

    Miller, F.L. Jr.

    1975-01-01

    The experimental apparatus consists of a 130 kV dc 80 kV ac intermediate voltage unit and a 600 kV dc 700 kV high voltage unit under construction. The experimental devices consist of an insulated container, or dewar, in which two electrodes are placed, one above the other. A voltage is built up in one electrode until an arc occurs to the other electrode. A typical set of breakdown data is shown. A mathematical analysis is briefly described. (MOW)

  12. Disinfection of fresh chicken breast fillets with in-package atmospheric cold plasma: effect of treatment voltage and time

    Science.gov (United States)

    Effects of treatment voltage and time of in-package atmospheric cold plasma (ACP) were studied on ozone formation, microbiological quality, surface color, and pH of fresh chicken fillets. Samples were sealed in food trays in air, treated with a dielectric-barrier-discharge (DBD) ACP system, and stor...

  13. Two-phase mixed media dielectric with macro dielectric beads for enhancing resistivity and breakdown strength

    Science.gov (United States)

    Falabella, Steven; Meyer, Glenn A; Tang, Vincent; Guethlein, Gary

    2014-06-10

    A two-phase mixed media insulator having a dielectric fluid filling the interstices between macro-sized dielectric beads packed into a confined volume, so that the packed dielectric beads inhibit electro-hydrodynamically driven current flows of the dielectric liquid and thereby increase the resistivity and breakdown strength of the two-phase insulator over the dielectric liquid alone. In addition, an electrical apparatus incorporates the two-phase mixed media insulator to insulate between electrical components of different electrical potentials. And a method of electrically insulating between electrical components of different electrical potentials fills a confined volume between the electrical components with the two-phase dielectric composite, so that the macro dielectric beads are packed in the confined volume and interstices formed between the macro dielectric beads are filled with the dielectric liquid.

  14. Analysis of OFF-state and ON-state performance in a silicon-on-insulator power MOSFET with a low-k dielectric trench

    International Nuclear Information System (INIS)

    Wang Zhigang; Zhang Bo; Li Zhaoji

    2013-01-01

    A novel silicon-on-insulator (SOI) MOSFET with a variable low-k dielectric trench (LDT MOSFET) is proposed and its performance and characteristics are investigated. The trench in the drift region between drain and source is filled with low-k dielectric to extend the effective drift region. At OFF state, the low-k dielectric trench (LDT) can sustain high voltage and enhance the dielectric field due to the accumulation of ionized charges. At the same time, the vertical dielectric field in the buried oxide can also be enhanced by these ionized charges. Additionally, ON-state analysis of LDT MOSFET demonstrates excellent forward characteristics, such as low gate-to-drain charge density ( 2 ) and a robust safe operating area (0–84 V). (semiconductor devices)

  15. High performance unipolar inverters by utilizing organic field-effect transistors with ultraviolet/ozone treated polystyrene dielectric

    International Nuclear Information System (INIS)

    Huang, Wei; Yu, Xinge; Fan, Huidong; Yu, Junsheng

    2014-01-01

    High performance unipolar inverters based on a significant variation of threshold voltage (V th ) of organic field-effect transistors (OFETs), which was realized by introducing UV/ozone (UVO) treatment to polystyrene (PS) dielectric, were fabricated. A controllable V th shift of more than 10 V was obtained in the OFETs by adjusting the UVO treating time, and the unipolar inverters exhibited inverting voltage near 1/2 driving voltage and a noise margin of more than 70% of ideal value. From the analysis of scanning electron microscopy, atom force microscopy, and X-ray photoelectron spectroscopy, the dramatic controllable V th of OFETs, which played a key role in high performance unipolar inverters, was attributed to the newly generated oxygen functional groups in the PS dielectric induced by UVO treatment.

  16. Pulse-voltage fast generator

    International Nuclear Information System (INIS)

    Valeev, R.I.; Nikiforov, M.G.; Kharchenko, A.F.

    1988-01-01

    The design is described and the test results of a four-channel pulse-voltage generator with maximum output voltage 200 kV are presented. The measurement results of generator triggering time depending on the value and polarity of the triggering voltage pulse for different triggering circuits are presented. The tests have shown stable triggering of all four channels of the generator in the range up to 40 % from selfbreakdown voltage. The generator triggering delay in the given range is <25 ns, asynchronism in channel triggering is <±1 ns

  17. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  18. Electrical and kinetical aspects of homogeneous dielectric-barrier discharge in xenon for excimer lamps

    International Nuclear Information System (INIS)

    Belasri, A.; Harrache, Z.

    2010-01-01

    A pulsed dielectric-barrier discharge in xenon has been simulated for operating conditions typical to excimer lamps, in which the discharge is considered spatially homogeneous. The computer model developed is based on the xenon plasma chemistry, the circuit, and the Boltzmann equations. First, the validity of the physical model was checked and compared to experimental and theoretical works, and then the model is applied in the case of a sinusoidal voltage at period frequencies in the range of 50 kHz-2 MHz. The results obtained with the present description are in good agreement with experimental measurements and one-dimensional fluid prediction in terms of electrical characteristics and vacuum ultraviolet (vuv) emission. The effect of operation voltage, power source frequency, dielectric capacitance, as well as gas pressure on the discharge efficiency and the 172, 150, and 147 nm photon generation, under the typical experimental operating conditions and for the case of a sinusoidal applied voltage, have been investigated and discussed. Calculations suggest that the overall conversion efficiency from electrical energy to vuv emission in the lamp is greater than 38%, and it will be very affected at high power source frequency and high gas pressure with a significant dependence on the dielectric capacitance.

  19. Semiconductor/dielectric interface engineering and characterization

    Science.gov (United States)

    Lucero, Antonio T.

    The focus of this dissertation is the application and characterization of several, novel interface passivation techniques for III-V semiconductors, and the development of an in-situ electrical characterization. Two different interface passivation techniques were evaluated. The first is interface nitridation using a nitrogen radical plasma source. The nitrogen radical plasma generator is a unique system which is capable of producing a large flux of N-radicals free of energetic ions. This was applied to Si and the surface was studied using x-ray photoelectron spectroscopy (XPS). Ultra-thin nitride layers could be formed from 200-400° C. Metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated using this passivation technique. Interface nitridation was able to reduce leakage current and improve the equivalent oxide thickness of the devices. The second passivation technique studied is the atomic layer deposition (ALD) diethylzinc (DEZ)/water treatment of sulfur treated InGaAs and GaSb. On InGaAs this passivation technique is able to chemically reduce higher oxidation states on the surface, and the process results in the deposition of a ZnS/ZnO interface passivation layer, as determined by XPS. Capacitance-voltage (C-V) measurements of MOSCAPs made on p-InGaAs reveal a large reduction in accumulation dispersion and a reduction in the density of interfacial traps. The same technique was applied to GaSb and the process was studied in an in-situ half-cycle XPS experiment. DEZ/H2O is able to remove all Sb-S from the surface, forming a stable ZnS passivation layer. This passivation layer is resistant to further reoxidation during dielectric deposition. The final part of this dissertation is the design and construction of an ultra-high vacuum cluster tool for in-situ electrical characterization. The system consists of three deposition chambers coupled to an electrical probe station. With this setup, devices can be processed and subsequently electrically characterized

  20. Experimental Study of Arcing on High-voltage Solar Arrays

    Science.gov (United States)

    Vayner, Boris; Galofaro, Joel; Ferguson, Dale

    2005-01-01

    The main obstacle to the implementation of a high-voltage solar array in space is arcing on the conductor-dielectric junctions exposed to the surrounding plasma. One obvious solution to this problem would be the installation of fully encapsulated solar arrays which were not having exposed conductors at all. However, there are many technological difficulties that must be overcome before the employment of fully encapsulated arrays will turn into reality. An alternative solution to raise arc threshold by modifications of conventionally designed solar arrays looks more appealing, at least in the nearest future. A comprehensive study of arc inception mechanism [1-4] suggests that such modifications can be done in the following directions: i) to insulate conductor-dielectric junction from a plasma environment (wrapthrough interconnects); ii) to change a coverglass geometry (overhang); iii) to increase a coverglass thickness; iiii) to outgas areas of conductor-dielectric junctions. The operation of high-voltage array in LEO produces also the parasitic current power drain on the electrical system. Moreover, the current collected from space plasma by solar arrays determines the spacecraft floating potential that is very important for the design of spacecraft and its scientific apparatus. In order to verify the validity of suggested modifications and to measure current collection five different solar array samples have been tested in large vacuum chamber. Each sample (36 silicon based cells) consists of three strings containing 12 cells connected in series. Thus, arc rate and current collection can be measured on every string independently, or on a whole sample when strings are connected in parallel. The heater installed in the chamber provides the possibility to test samples under temperature as high as 80 C that simulates the LEO operational temperature. The experimental setup is described below.

  1. Temporary over voltages in the high voltage networks

    International Nuclear Information System (INIS)

    Vukelja, Petar; Naumov, Radomir; Mrvic, Jovan; Minovski, Risto

    2001-01-01

    The paper treats the temporary over voltages that may arise in the high voltage networks as a result of: ground faults, loss of load, loss of one or two phases and switching operation. Based on the analysis, the measures for their limitation are proposed. (Original)

  2. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  3. Cross Talk Analysis on Multiple Coupled Transmission Lines; (The calculation of transfer functions on multiple coupled tansmission lines in an inhomogeneous dielectric medium)

    DEFF Research Database (Denmark)

    Dalby, Arne Brejning

    1994-01-01

    A flow graph relating voltages and the forward and reflected propagation modes (¿ TEM) on multiple coupled transmission lines in an inhomogeneous dielectric medium is presented. This flow graph directy gives the different transfer functions, including S-parameters, in matrix form needed to calcul......A flow graph relating voltages and the forward and reflected propagation modes (¿ TEM) on multiple coupled transmission lines in an inhomogeneous dielectric medium is presented. This flow graph directy gives the different transfer functions, including S-parameters, in matrix form needed...

  4. Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

    Science.gov (United States)

    Teverovsky, Alexander A.

    2016-01-01

    Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

  5. Voltage Stress on Y Capacitors from Indirect Lightning Pulses According to ED-14/DO-160

    Science.gov (United States)

    Meier, F.

    2012-05-01

    Transients due to lightning strikes on an aircraft's fuselage impose stress on the input filters of elec- tronic equipment. Permanent damage can occur when exceeding the voltage handling capacity of filter components causing a short circuit to ground. In ED-14/DO-160, section 22, a number of waveforms and levels are defined which are used to check the airworthiness of avionics equipment. Depending on pro- cedure and level, Y-capacitors are stressed by transient voltages which exceed their dielectric strength. The design engineer's task is a properly select the type and voltage rating of capacitors. With moderate simplifications, a LCR-series network is justified to calculate the peak voltage dependent on the capacitance.

  6. Effect of resin composition to the electrical and mechanical properties of high voltage insulator material

    International Nuclear Information System (INIS)

    Totok Dermawan; Elin Nuraini; Suyamto

    2012-01-01

    A solid insulator manufacture of resins for high voltage with a variation of resin and hardener composition has been made. The purpose of research to know electrical and mechanical properties of high voltage insulator material of resin. To determine its electric properties, the material is tested its breakdown voltage and the flashover voltage that occurred on the surface. While to determine the mechanical properties were tested by measuring its strength with a tensile test. From testing with variety of mixed composition it is known that for composition between hardener and resin of 1 : 800 has most advantageous properties because it has good strength with a tensile strength of 19.86 MPa and enough high dielectric strength of 43.2 kV / mm). (author)

  7. A compact, all solid-state LC high voltage generator.

    Science.gov (United States)

    Fan, Xuliang; Liu, Jinliang

    2013-06-01

    LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

  8. The electric strength of high-voltage transformers insulation at effect of partial dischargers

    International Nuclear Information System (INIS)

    Khoshravan, E.; Zeraatparvar, A.; Gashimov, A.M.; Mehdizadeh, R.N.

    2001-01-01

    Full text : In paper the change of electric strength of high-voltage transformers insulation at the effect of partial discharges with space charge accumulation was investigated. It is revealed that the effect of partial discharges of insulation materials results the reduction of their pulsing electric strength which can restore the own initial value at releasing of saved charge the volume of a material under condition of absence the ineversible structural changes in it. Researches of high-voltage transformers insulation's non-failure operation conditions show, that at increasing of insulation work time in a strong electrical field the reduction of average breakdown voltages with simultaneous increasing of spread in discharge voltage values takes place. It authentically testifies to reduction of short-time discharge voltage of insulation materials during their electrical aging. As the basic reason of insulation electrical aging the partial discharges occurring in gas cavities inside insulation were considered. It is known that the space charges will be formed in insulation elements of high-voltage devices which effects in dielectrical property of these elements including the electric strength and the space charge formation can occur also at partial discharges in an alternating voltage while the service of high-voltage transformers. In the given work the experiments in revealing separate influence partial discharges in pulsing electric strength of insulation materials at presence and at absence inside them the space charge were spent

  9. Electrical properties and dielectric spectroscopy of Ar{sup +} implanted polycarbonate

    Energy Technology Data Exchange (ETDEWEB)

    Chawla, Mahak, E-mail: mahak.chawla@gmail.com; Shekhawat, Nidhi; Aggarwal, Sanjeev; Sharma, Annu [Department of Physics, Kurukshetra University, Kurukshetra - 136119 (India); Nair, K. G. M. [Consultant, UGC-DAE Consortium for Scientific Research, Kalpakkam Node, Kokilamedu-603104, Tamilnadu (India)

    2015-05-15

    The aim of the present paper is to study the effect of argon ion implantation on electrical and dielectric properties of polycarbonate. Specimens were implanted with 130 keV Ar{sup +} ions in the fluence ranging from 1×10{sup 14} to 1×10{sup 16} ions cm{sup −2}. The beam current used was ∼0.40 µA cm{sup −2}. The electrical conduction behaviour of virgin and Ar{sup +} implanted polycarbonate specimens have been studied through current-voltage (I-V characteristic) measurements. It has been observed that after implantation conductivity increases with increasing ion fluence. The dielectric spectroscopy of these specimens has been done in the frequency range of 100 kHz-100 MHz. Relaxation processes were studied by Cole-Cole plot of complex permittivity (real part of complex permittivity, ε′ vs. imaginary part of complex permittivity, ε″). The Cole-Cole plots have also been used to determine static dielectric constant (ε{sub s}), optical dielectric constant (ε{sub ∞}), spreading factor (α), average relaxation time (τ{sub 0}) and molecular relaxation time (τ). The dielectric behaviour has been found to be significantly affected due to Ar{sup +} implantation. The possible correlation between this behaviour and the changes induced by the implantation has been discussed.

  10. Finite element analysis and validation of dielectric elastomer actuators used for active origami

    International Nuclear Information System (INIS)

    McGough, Kevin; Ahmed, Saad; Frecker, Mary; Ounaies, Zoubeida

    2014-01-01

    The field of active origami explores the incorporation of active materials into origami-inspired structures in order to serve as a means of actuation. Active origami-inspired structures capable of folding into complex three-dimensional (3D) shapes have the potential to be lightweight and versatile compared to traditional methods of actuation. This paper details the finite element analysis and experimental validation of unimorph actuators. Actuators are fabricated by adhering layers of electroded dielectric elastomer (3M VHB F9473PC) onto a passive substrate layer (3M Magic Scotch Tape). Finite element analysis of the actuators simulates the electromechanical coupling of the dielectric elastomer under an applied voltage by applying pressures to the surfaces of the dielectric elastomer where the compliant electrode (conductive carbon grease) is present. 3D finite element analysis of the bending actuators shows that applying contact boundary conditions to the electroded region of the active and passive layers provides better agreement to experimental data compared to modeling the entire actuator as continuous. To improve the applicability of dielectric elastomer-based actuators for active origami-inspired structures, folding actuators are developed by taking advantage of localized deformation caused by a passive layer with non-uniform thickness. Two-dimensional analysis of the folding actuators shows that agreement to experimental data diminishes as localized deformation increases. Limitations of using pressures to approximate the electromechanical coupling of the dielectric elastomer under an applied electric field and additional modeling considerations are also discussed. (paper)

  11. Insight into the dielectric response of transformer oil-based nanofluids

    Directory of Open Access Journals (Sweden)

    Ming Dong

    2017-02-01

    Full Text Available The oil-based nanofluids with greater dielectric strength have attracted much attention as a crucial insulating materials in high-voltage oil-immersed power equipment. In fact, the different microstructures of the transformer oil-based nanofluids (TNFs would result in different dielectric properties. In this work, the broadband dielectric spectroscopy measurement was used to establish the linkage between the electric double layer (EDL and dielectric response properties of TNFs which was performed at 298K temperature and with frequency range from 10-2Hz∼106Hz. The modified Havriliak-Negami (HN model function was used to analyze the measured results. The results demonstrate that both the real and imaginary parts of dielectric spectra of two kinds of oil are composed of the conductivity and polarization process. Compared with pure oil, two polarization process could be observed for the TNFs, explained by the EDL structure reasonably. The introduction of the EDL structure provides an idea to account for the insulating strength improvement of TNFs for the first time.

  12. Dielectric coatings on metal substrates

    International Nuclear Information System (INIS)

    Glaros, S.S.; Baker, P.; Milam, D.

    1976-01-01

    Large aperture, beryllium substrate-based mirrors have been used to focus high intensity pulsed laser beams. Finished surfaces have high reflectivity, low wavefront distortion, and high laser damage thresholds. This paper describes the development of a series of metallic coatings, surface finishing techniques, and dielectric overcoatings to meet specified performance requirements. Beryllium substrates were coated with copper, diamond-machined to within 5 micro-inches to final contour, nickel plated, and abrasively figured to final contour. Bond strengths for several bonding processes are presented. Dielectric overcoatings were deposited on finished multimetallic substrates to increase both reflectivity and the damage thresholds. Coatings were deposited using both high and low temperature processes which induce varying stresses in the finished coating substrate system. Data are presented to show the evolution of wavefront distortion, reflectivity, and damage thresholds throughout the many steps involved in fabrication

  13. Zipping dielectric elastomer actuators: characterization, design and modeling

    International Nuclear Information System (INIS)

    Maffli, L; Rosset, S; Shea, H R

    2013-01-01

    We report on miniature dielectric elastomer actuators (DEAs) operating in zipping mode with an analytical model that predicts their behavior. Electrostatic zipping is a well-known mechanism in silicon MEMS to obtain large deformations and forces at lower voltages than for parallel plate electrostatic actuation. We extend this concept to DEAs, which allows us to obtain much larger out-of-plane displacements compared to silicon thanks to the softness of the elastomer membrane. We study experimentally the effect of sidewall angles and elastomer prestretch on 2.3 mm diameter actuators with PDMS membranes. With 15° and 22.5° sidewall angles, the devices zip in a bistable manner down 300 μm to the bottom of the chambers. The highly tunable bistable behavior is controllable by both chamber geometry and membrane parameters. Other specific characteristics of zipping DEAs include well-controlled deflected shape, tunable displacement versus voltage characteristics to virtually any shape, including multi-stable modes, sealing of embedded holes or channels for valving action and the reduction of the operating voltage. These properties make zipping DEAs an excellent candidate for applications such as integrated microfluidics actuators or Braille displays. (paper)

  14. Asymmetric Dielectric Elastomer Composite Material

    Science.gov (United States)

    Stewart, Brian K. (Inventor)

    2014-01-01

    Embodiments of the invention provide a dielectric elastomer composite material comprising a plurality of elastomer-coated electrodes arranged in an assembly. Embodiments of the invention provide improved force output over prior DEs by producing thinner spacing between electrode surfaces. This is accomplished by coating electrodes directly with uncured elastomer in liquid form and then assembling a finished component (which may be termed an actuator) from coated electrode components.

  15. Coherent multimoded dielectric wakefield accelerators

    International Nuclear Information System (INIS)

    Power, J.

    1998-01-01

    There has recently been a study of the potential uses of multimode dielectric structures for wakefield acceleration [1]. This technique is based on adjusting the wakefield modes of the structure to constructively interfere at certain delays with respect to the drive bunch, thus providing an accelerating gradient enhancement over single mode devices. In this report we examine and attempt to clarify the issues raised by this work in the light of the present state of the art in wakefield acceleration

  16. Dielectric-filled radiofrequency linacs

    Energy Technology Data Exchange (ETDEWEB)

    Faehl, R J; Keinigs, R K; Pogue, E W [Los Alamos National Lab., NM (United States)

    1997-12-31

    High current, high brightness electron beam accelerators promise to open up dramatic new applications. Linear induction accelerators are currently viewed as the appropriate technology for these applications. A concept by Humphries and Hwang may permit radiofrequency accelerators to fulfill the same functions with greater simplicity and enhanced flexibility. This concept involves the replacement of vacuum rf cavities with dielectric filled ones. Simple analysis indicates that the resonant frequencies are reduced by a factor of ({epsilon}{sub 0}/{epsilon}){sup 1/2} while the stored energy is increased by {epsilon}/{epsilon}{sub 0}. For a high dielectric constant like water, this factor can approach 80. A series of numerical calculations of simple pill-box cavities was performed. Eigenfunctions and resonant frequencies for a full system configuration, including dielectric material, vacuum beamline, and a ceramic window separating the two have been computed. These calculations are compared with the results of a small experimental cavity which have been constructed and operated. Low power tests show excellent agreement. (author). 4 figs., 8 refs.

  17. Computer controlled high voltage system

    Energy Technology Data Exchange (ETDEWEB)

    Kunov, B; Georgiev, G; Dimitrov, L [and others

    1996-12-31

    A multichannel computer controlled high-voltage power supply system is developed. The basic technical parameters of the system are: output voltage -100-3000 V, output current - 0-3 mA, maximum number of channels in one crate - 78. 3 refs.

  18. A Voltage Quality Detection Method

    DEFF Research Database (Denmark)

    Chen, Zhe; Wei, Mu

    2008-01-01

    This paper presents a voltage quality detection method based on a phase-locked loop (PLL) technique. The technique can detect the voltage magnitude and phase angle of each individual phase under both normal and fault power system conditions. The proposed method has the potential to evaluate various...

  19. Nonlinear behaviors in a pulsed dielectric barrier discharge at atmospheric pressure

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Jiao; Wang Yanhui, E-mail: wangyh@dlut.edu.cn; Wang Dezhen

    2011-08-01

    In this paper, the temporal nonlinear behaviors of pulsed dielectric barrier discharge in atmospheric helium are studied numerically by a one-dimensional fluid model. The results show that the common single-period pulsed discharge with two current pulses per single voltage pulse can take place over a broad parameter range. The rising and falling times of the voltage pulse can affect the discharge characteristics greatly. When the discharge is ignited by a pulse voltage with long rising and falling times, a single-period pulsed discharge with multiple current peaks can be observed. Under appropriate rising and falling times of the voltage pulse, a stable period-two discharge can occur over wide frequency and voltage ranges. Also this period-two discharge can exhibit different current and voltage characteristics with changing the duty cycle. With other parameters fixed, the pulsed DBD could be driven to chaos through period-doubling route by increasing either the falling time or the frequency of voltage pulse.

  20. Flexible low-voltage organic transistors with high thermal stability at 250 °C.

    Science.gov (United States)

    Yokota, Tomoyuki; Kuribara, Kazunori; Tokuhara, Takeyoshi; Zschieschang, Ute; Klauk, Hagen; Takimiya, Kazuo; Sadamitsu, Yuji; Hamada, Masahiro; Sekitani, Tsuyoshi; Someya, Takao

    2013-07-19

    Low-operating-voltage flexible organic thin-film transistors with high thermal stability using DPh-DNTT and SAM gate dielectrics are reported. The mobility of the transistors are decreased by 23% after heating to 250 °C for 30 min. Furthermore, flexible organic pseudo-CMOS inverter circuits, which are functional after heating to 200 °C, are demonstrated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Digital Control of a High Voltage (2.5 kV) Bidirectional Flyback DC-DC Converter for Driving a Capacitive Incremental Actuator

    DEFF Research Database (Denmark)

    Thummala, Prasanth; Maksimovic, Dragan; Zhang, Zhe

    2016-01-01

    This paper presents a digital control technique to achieve valley switching in a bidirectional flyback converter used to drive a dielectric electro-active polymer based capacitive incremental actuator. The paper also provides the design of a low input voltage (24 V) and variable high output voltage...... on the output high-voltage (HV) side. Experimental results verifying the bidirectional operation of a high voltage flyback converter are presented, using a 3 kV polypropylene film capacitor as the load. The energy loss distributions of the converter when 4 kV and 4.5 kV HV MOSFETs are used on HV side...

  2. Voltage Controlled Dynamic Demand Response

    DEFF Research Database (Denmark)

    Bhattarai, Bishnu Prasad; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Future power system is expected to be characterized by increased penetration of intermittent sources. Random and rapid fluctuations in demands together with intermittency in generation impose new challenges for power balancing in the existing system. Conventional techniques of balancing by large...... central or dispersed generations might not be sufficient for future scenario. One of the effective methods to cope with this scenario is to enable demand response. This paper proposes a dynamic voltage regulation based demand response technique to be applied in low voltage (LV) distribution feeders....... An adaptive dynamic model has been developed to determine composite voltage dependency of an aggregated load on feeder level. Following the demand dispatch or control signal, optimum voltage setting at the LV substation is determined based on the voltage dependency of the load. Furthermore, a new technique...

  3. INVESTIGATION OF THE FREQUENCY-TEMPERATURE RELATIONSHIP OF THE DIELECTRIC PERMITTIVITY OF THE PZT PIEZOCERAMICS IN THE LOW FREQUENCY RANGE

    Directory of Open Access Journals (Sweden)

    A. I. ZOLOTAREVSKIY

    2018-05-01

    Full Text Available Purpose. To investigate the frequency-temperature relationship of the dielectric permittivity of PZT piezoceramics in the low frequency range. Methodology. To obtain the frequency-temperature relationship of the dielectric permittivity of the PZT piezoceramics, a technique was used to determine the capacitance of the capacitor, between which plates the sample was placed. The value of the dielectric permittivity of the sample was calculated from the capacitor capacitance obtained. Findings. The frequency-temperature relationship of the dielectric permittivity of the PZT piezoceramics in the low frequency range has been obtained by the authors. The dielectric permittivity is not practically related to the frequency of the alternating voltage at a low temperature, with increasing in temperature its value increases and frequency relationship is observed. The temperature relationship of the dielectric permittivity of the PZT piezoceramics is satisfactorily described by the exponential functional dependence in the low-temperature range. The activation energy of the PZT piezoceramics polarization is determined from the graph of the dependence of the logarithm of the dielectric permittivity upon the inverse temperature. Different values of the activation energy for the two temperature regions prove on the existence of different mechanisms of the PZT piezoceramics polarization in the temperature range being investigated. Originality. The authors investigated the frequency-temperature relationship of the dielectric permittivity of the PZT piezoceramics in the low-frequency range. It is established that the temperature relationship of the dielectric permittivity of the PZT piezoceramics is satisfactorily described by an exponential functional relationship in the lowtemperature range. The activation energy of polarization is determined for two temperature sections. Practical value. The research results can be used to study the mechanism of polarization of

  4. Terahertz-frequency dielectric response of liquids

    DEFF Research Database (Denmark)

    Jepsen, Peter Uhd; Møller, Uffe; Cooke, David

    The dielectric response of liquids spans many decades in frequency. The dielectric response of a polar liquid is typically determined by relaxational dynamics of the dipolar moments of the liquid. In contrast, the dielectric response of a nonpolar liquid is determined by much weaker collision......-induced dipole moments. In the polar liquid water the fastest relaxational dynamics is found at terahertz frequencies, just below the first intermolecular vibrational and librational modes. In this presentation we will discuss optical terahertz spectroscopic techniques for measurement of the full dielectric...... function of liquids at terahertz frequencies. We will review the current understanding of the high-frequency dielectric spectrum of water, and discuss the relation between the dielectric spectrum and the thermodynamic properties of certain aqueous solutions....

  5. First high-voltage measurements using Ca{sup +} ions at the ALIVE experiment

    Energy Technology Data Exchange (ETDEWEB)

    König, K., E-mail: kkoenig@ikp.tu-darmstadt.de [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Geppert, Ch. [Universität Mainz, Institut für Kernchemie (Germany); Krämer, J.; Maaß, B. [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Otten, E. W. [Universität Mainz, Institut für Physik (Germany); Ratajczyk, T.; Nörtershäuser, W. [Technische Universität Darmstadt, Institut für Kernphysik (Germany)

    2017-11-15

    Many physics experiments depend on accurate high-voltage measurements to determine for example the exact retardation potential of an electron spectrometer as in the KATRIN experiment or the acceleration voltage of the ions at ISOL facilities. Until now only precision high-voltage dividers can be used to measure voltages up to 65 kV with an accuracy of 1 ppm. However, these dividers need frequent calibration and cross-checking and the direct traceability is not given. In this article we will describe the status of an experiment which aims to measure high voltages using collinear laser spectroscopy and which has the potential to provide a high-voltage standard and hence, a calibration source for precision high-voltage dividers on the 1 ppm level.

  6. The electrical performance and gate bias stability of an amorphous InGaZnO thin-film transistor with HfO2 high-k dielectrics

    Science.gov (United States)

    Wang, Ruo Zheng; Wu, Sheng Li; Li, Xin Yu; Zhang, Jin Tao

    2017-07-01

    In this study, we set out to fabricate an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with SiNx/HfO2/SiNx (SHS) sandwiched dielectrics. The J-V and C-V of this SHS film were extracted by the Au/p-Si/SHS/Ti structure. At room temperature the a-IGZO with SHS dielectrics showed the following electrical properties: a threshold voltage of 2.9 V, a subthreshold slope of 0.35 V/decade, an on/off current ratio of 3.5 × 107, and a mobility of 12.8 cm2 V-1 s-1. Finally, we tested the influence of gate bias stress on the TFT, and the result showed that the threshold voltage shifted to a positive voltage when applying a positive gate voltage to the TFT.

  7. Lamb shift of an atom in a dielectric medium

    International Nuclear Information System (INIS)

    Milonni, P.W.; Schaden, M.; Spruch, L.

    1999-01-01

    Adapting an approach used by Feynman for the Lamb shift of an isolated atom, we obtain a nonperturbative expression for the Lamb shift of an atom in a dielectric medium, previously calculated perturbatively [P. W. Milonni, J. Mod. Opt. 42, 1191 (1995)]. The separation of the Lamb and Casimir components of the field energy is greatly simplified, and previous nonperturbative results for the Lamb shift [M. Schaden, L. Spruch, and F. Zhou, Phys. Rev. A 57, 1108 (1998)], based on the generalized argument theorem, are obtained much more easily and directly. copyright 1999 The American Physical Society

  8. Isolation contactor state control system

    Energy Technology Data Exchange (ETDEWEB)

    Bissontz, Jay E.

    2017-05-16

    A controller area network (CAN) installed on a hybrid electric vehicle provides one node with control of high voltage power distribution system isolation contactors and the capacity to energize a secondary electro-mechanical relay device. The output of the secondary relay provides a redundant and persistent backup signal to the output of the node. The secondary relay is relatively immune to CAN message traffic interruptions and, as a result, the high voltage isolation contactor(s) are less likely to transition open in the event that the intelligent output driver should fail.

  9. Origin of colossal dielectric permittivity of rutile Ti₀.₉In₀.₀₅Nb₀.₀₅O₂: single crystal and polycrystalline.

    Science.gov (United States)

    Song, Yongli; Wang, Xianjie; Sui, Yu; Liu, Ziyi; Zhang, Yu; Zhan, Hongsheng; Song, Bingqian; Liu, Zhiguo; Lv, Zhe; Tao, Lei; Tang, Jinke

    2016-02-12

    In this paper, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 10(4), dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In + Nb) co-doped rutile TiO2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.

  10. ZnO as dielectric for optically transparent non-volatile memory

    International Nuclear Information System (INIS)

    Salim, N. Tjitra; Aw, K.C.; Gao, W.; Wright, Bryon E.

    2009-01-01

    This paper discusses the application of a DC sputtered ZnO thin film as a dielectric in an optically transparent non-volatile memory. The main motivation for using ZnO as a dielectric is due to its optical transparency and mechanical flexibility. We have established the relationship between the electrical resistivity (ρ) and the activation energy (E a ) of the electron transport in the conduction band of the ZnO film. The ρ of 2 x 10 4 -5 x 10 7 Ω-cm corresponds to E a of 0.36-0.76 eV, respectively. The k-value and optical band-gap for films sputtered with Ar:O 2 ratio of 4:1 are 53 ± 3.6 and 3.23 eV, respectively. In this paper, the basic charge storage element for a non-volatile memory is a triple layer dielectric structure in which a 50 nm thick ZnO film is sandwiched between two layers of methyl silsesquioxane sol-gel dielectric of varying thickness. A pronounced clockwise capacitance-voltage (C-V) hysteresis was observed with a memory window of 6 V. The integration with a solution-processable pentacene, 13,6-N-Sulfinylacetamodipentacene resulted in an optically transparent organic field effect transistor non-volatile memory (OFET-NVM). We have demonstrated that this OFET-NVM can be electrically programmed and erased at low voltage (± 10 V) with a threshold voltage shift of 4.0 V.

  11. Illumination and Voltage Dependence of Electrical Characteristics of Au/0.03 Graphene-Doped PVA/n-Si Structures via Capacitance/Conductance-Voltage Measurements

    International Nuclear Information System (INIS)

    Sahar, Alialy; Şlemsettin, Altındal; Ahmet, Kaya; İ, Uslu

    2015-01-01

    Au/n-Si (MS) structures with a high dielectric interlayer (0.03 graphene-doped PVA) are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements at room temperature and at 1 MHz. Some of the main electrical parameters such as concentration of doping atoms (N D ), barrier height (ϕ B (C - V)), depletion layer width (W D ) and series resistance (R s ) show fairly large illumination dispersion. The voltage-dependent profile of surface states (N ss ) and resistance of the structure (R i ) are also obtained by using the dark-illumination capacitance (C dark -C ill ) and Nicollian-Brews methods, respectively. For a clear observation of changes in electrical parameters with illumination, the values of N D , W D , ϕ B (C - V) and R s are drawn as a function of illumination intensity. The values of N D and W D change almost linearly with illumination intensity. On the other hand, R s decreases almost exponentially with increasing illumination intensity whereas ϕ B (C - V) increases. The experimental results suggest that the use of a high dielectric interlayer (0.03 graphene-doped PVA) considerably passivates or reduces the magnitude of the surface states. The large change or dispersion in main electrical parameters can be attributed to generation of electron-hole pairs in the junction under illumination and to a good light absorption. All of these experimental results confirm that the fabricated Au/0.03 graphene-doped PVA/n-Si structure can be used as a photodiode or a capacitor in optoelectronic applications. (paper)

  12. A solid-state dielectric elastomer switch for soft logic

    Energy Technology Data Exchange (ETDEWEB)

    Chau, Nixon [Biomimetics Laboratory, Auckland Bioengineering Institute, The University of Auckland, Level 6, 70 Symonds Street, Auckland 1010 (New Zealand); Slipher, Geoffrey A., E-mail: geoffrey.a.slipher.civ@mail.mil; Mrozek, Randy A. [U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States); O' Brien, Benjamin M. [StretchSense, Ltd., 27 Walls Rd., Penrose, Auckland 1061 (New Zealand); Anderson, Iain A. [Biomimetics Laboratory, Auckland Bioengineering Institute, The University of Auckland, Level 6, 70 Symonds Street, Auckland 1010 (New Zealand); StretchSense, Ltd., 27 Walls Rd., Penrose, Auckland 1061 (New Zealand); Department of Engineering Science, School of Engineering, The University of Auckland, Level 3, 70 Symonds Street, Auckland 1010 (New Zealand)

    2016-03-07

    In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease of manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.

  13. Carbon nanotube transistors with graphene oxide films as gate dielectrics

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Carbon nanomaterials,including the one-dimensional(1-D) carbon nanotube(CNT) and two-dimensional(2-D) graphene,are heralded as ideal candidates for next generation nanoelectronics.An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide.Here,in analogy to the widespread use of silicon dioxide(SiO2) in silicon microelectronic industry,we report the proof-of-principle use of graphite oxide(GO) as a gate dielectrics for CNT field-effect transistor(FET) via a fast and simple solution-based processing in the ambient condition.The exceptional transistor characteristics,including low operation voltage(2 V),high carrier mobility(950 cm2/V-1 s-1),and the negligible gate hysteresis,suggest a potential route to the future all-carbon nanoelectronics.

  14. A solid-state dielectric elastomer switch for soft logic

    International Nuclear Information System (INIS)

    Chau, Nixon; Slipher, Geoffrey A.; Mrozek, Randy A.; O'Brien, Benjamin M.; Anderson, Iain A.

    2016-01-01

    In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease of manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.

  15. LOFT voltage insertion calibaration program

    International Nuclear Information System (INIS)

    Tillitt, D.N.; Miyasaki, F.S.

    1975-08-01

    The Loss-of-Fluid Test (LOFT) Facility is an experimental facility built around a ''scaled'' version of a large pressurized water reactor (LPWR). Part of this facility is the Data Acquisition and Visual Display System (DAVDS) as defined by the LOFT System Design Document SDD 1.4.2C. The DAVDS has a 702 data channel recording capability of which 548 are recorded digitally. The DAVDS also contains a Voltage Insertion Calibration Subsystem used to inject precise and known voltage steps into the recording systems. The computer program that controls the Voltage Insertion Calibration Subsystem is presented. 7 references. (auth)

  16. Power-MOSFET Voltage Regulator

    Science.gov (United States)

    Miller, W. N.; Gray, O. E.

    1982-01-01

    Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

  17. Quantum-coherence-assisted tunable on- and off-resonance tunneling through a quantum-dot-molecule dielectric film

    International Nuclear Information System (INIS)

    Shen Jianqi; Zeng Ruixi

    2017-01-01

    Quantum-dot-molecular phase coherence (and the relevant quantum-interference-switchable optical response) can be utilized to control electromagnetic wave propagation via a gate voltage, since quantum-dot molecules can exhibit an effect of quantum coherence (phase coherence) when quantum-dot-molecular discrete multilevel transitions are driven by an electromagnetic wave. Interdot tunneling of carriers (electrons and holes) controlled by the gate voltage can lead to destructive quantum interference in a quantum-dot molecule that is coupled to an incident electromagnetic wave, and gives rise to a quantum coherence effect (e.g., electromagnetically induced transparency, EIT) in a quantum-dot-molecule dielectric film. The tunable on- and off-resonance tunneling effect of an incident electromagnetic wave (probe field) through such a quantum-coherent quantum-dot-molecule dielectric film is investigated. It is found that a high gate voltage can lead to the EIT phenomenon of the quantum-dot-molecular systems. Under the condition of on-resonance light tunneling through the present quantum-dot-molecule dielectric film, the probe field should propagate without loss if the probe frequency detuning is zero. Such an effect caused by both EIT and resonant tunneling, which is sensitive to the gate voltage, can be utilized for designing devices such as photonic switching, transistors, and logic gates. (author)

  18. Design and testing of 45 kV, 50 kHz pulse power supply for dielectric barrier discharges

    Science.gov (United States)

    Sharma, Surender Kumar; Shyam, Anurag

    2016-10-01

    The design, construction, and testing of high frequency, high voltage pulse power supply are reported. The purpose of the power supply is to generate dielectric barrier discharges for industrial applications. The power supply is compact and has the advantage of low cost, over current protection, and convenient control for voltage and frequency selection. The power supply can generate high voltage pulses of up to 45 kV at the repetitive frequency range of 1 kHz-50 kHz with 1.2 kW input power. The output current of the power supply is limited to 500 mA. The pulse rise time and fall time are less than 2 μs and the pulse width is 2 μs. The power supply is short circuit proof and can withstand variable plasma load conditions. The power supply mainly consists of a half bridge series resonant converter to charge an intermediate capacitor, which discharges through a step-up transformer at high frequency to generate high voltage pulses. Semiconductor switches and amorphous cores are used for power modulation at higher frequencies. The power supply is tested with quartz tube dielectric barrier discharge load and worked stably. The design details and the performance of the power supply on no load and dielectric barrier discharge load are presented.

  19. Low-profile high-voltage compact gas switch

    International Nuclear Information System (INIS)

    Goerz, D.A.; Wilson, M.J.; Speer, R.D.

    1997-01-01

    This paper discusses the development and testing of a low-profile, high-voltage, spark-gap switch designed to be closely coupled with other components into an integrated high-energy pulsed-power source. The switch is designed to operate at 100 kV using SF6 gas pressurized to less than 0.7 MPa. The volume of the switch cavity region is less than 1.5 cm3, and the field stress along the gas-dielectric interface is as high as 130 kV/cm. The dielectric switch body has a low profile that is only I -cm tall at its greatest extent and nominally 2-mm thick over most of its area. This design achieves a very low inductance of less than 5 nH, but results in field stresses exceeding 500 kV/cm in the dielectric material. Field modeling was done to determine the appropriate shape for the highly stressed insulator and electrodes, and special manufacturing techniques were employed to mitigate the usual mechanisms that induce breakdown and failure in solid dielectrics. Static breakdown tests verified that the switch operates satisfactorily at 100 kV levels. The unit has been characterized with different shaped electrodes having nominal gap spacings of 2.0, 2.5, and 3.0 mm. The relationship between self-break voltage and operating pressure agrees well with published data on gas properties, accounting for the field enhancements of the electrode shapes being used. Capacitor discharge tests in a low inductance test fixture exhibited peak currents up to 25 kA with characteristic frequencies of the ringdown circuit ranging from 10 to 20 MHz. The ringdown waveforms and scaling of measured parameters agree well with circuit modeling of the switch and test fixture. Repetitive operation has been demonstrated at moderate rep-rates up to 15 Hz, limited by the power supply being used. Preliminary tests to evaluate lifetime of the compact switch assembly have been encouraging. In one case, after more than 7,000 high-current ringdown tests with approximately 30 C of total charge transferred, the

  20. Nonlinear current-voltage behavior in PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Li, Shida; Zhang, Ping; Lan, Kuibo [Tianjin University, School of Electrical and Information Engineering, Tianjin (China)

    2017-05-15

    In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were prepared by sol-gel synthesis and characterized by X-ray diffraction, field emission scanning electron microscopy and current-voltage measurements. Here, we demonstrate that in addition to the outstanding ferroelectric and dielectric properties, the PZT films also have remarkably nonlinear current-voltage characteristics. Considering the contact of semi-conductive grains in the PZT films, a double Schottky barrier (DSB) model may be responsible for such phenomena. The test results show that with the decrease of annealing temperature and the increase of the film thickness, the threshold voltages (V{sub th}) increase obviously. The maximum V{sub th} value of 60.95 V and the minimum value of 6.9 V in our experiments were obtained from the five-layered samples annealed at 600 C and the two-layered samples annealed at 700 C, respectively. As a result, PZT thin film may lead to efficient switching and sensing devices. (orig.)

  1. Theoretical study of the electromechanical efficiency of a loaded tubular dielectric elastomer actuator

    DEFF Research Database (Denmark)

    Rechenbach, Björn; Willatzen, Morten; Lassen, Benny

    2016-01-01

    The electromechanical efficiency of a loaded tubular dielectric elastomer actuator (DEA) is investigated theoretically. In previous studies, the external system, on which the DEA performs mechanical work, is implemented implicitly by prescribing the stroke of the DEA in a closed operation cycle....... Here, a more generic approach, modelling the external system by a frequency-dependent mechanical impedance which exerts a certain force on the DEA depending on its deformation, is chosen. It admits studying the dependence of the electromechanical efficiency of the DEA on the external system. A closed...... operation cycle is realized by exciting the DEA electrically by a sinusoidal voltage around a bias voltage. A detailed parametric study shows that the electromechanical efficiency is highly dependent on the frequency, amplitude, and bias of the excitation voltage and the mechanical impedance of the external...

  2. New modeling method for the dielectric relaxation of a DRAM cell capacitor

    Science.gov (United States)

    Choi, Sujin; Sun, Wookyung; Shin, Hyungsoon

    2018-02-01

    This study proposes a new method for automatically synthesizing the equivalent circuit of the dielectric relaxation (DR) characteristic in dynamic random access memory (DRAM) without frequency dependent capacitance measurement. Charge loss due to DR can be observed by a voltage drop at the storage node and this phenomenon can be analyzed by an equivalent circuit. The Havariliak-Negami model is used to accurately determine the electrical characteristic parameters of an equivalent circuit. The DRAM sensing operation is performed in HSPICE simulations to verify this new method. The simulation demonstrates that the storage node voltage drop resulting from DR and the reduction in the sensing voltage margin, which has a critical impact on DRAM read operation, can be accurately estimated using this new method.

  3. Three cell flying capacitor inverter for dielectric barrier discharge plasma applications

    International Nuclear Information System (INIS)

    Flores-Fuentes, A.; Lopez-Callejas, A.; Piedad-Beneitez, A. de la; Pena-Eguiluz, R.; Mercado-Cabrera, A.; Valencia-Alvarado, R.; Barocio, S.R.

    2009-01-01

    It is reported the design, construction and initial tests of a three cell flying capacitor inverter (TCFCI) in a half-bridge configuration. The device operates at a 200 k Hz frequency which leads to a voltage output at 12.5 k Hz presenting an acceptable response in an open-loop configuration. These features outdo those reported in the current multilevel converter literature. The TCFCI is driven by pulse width modulation, following a phase shift (PS-PWM) control strategy, in order to generate a steady AC voltage signal. This inverter is used to excite a dielectric barrier discharge cell (DBDC) intended for cold plasma generation at room pressure. Some results obtained for two different kinds of atmosphere, helium and argon, are presented. All the system having been tested, early recorded voltage and current waveforms, are included. Finally, three methods for calculating the related electric efficiency of the discharge cell are discussed. (author)

  4. Influence of stacking morphology and edge nitrogen doping on the dielectric performance of graphene-polymer nanocomposites

    KAUST Repository

    Almadhoun, Mahmoud N.

    2014-05-13

    We demonstrate that functional groups obtained by varying the preparation route of reduced graphene oxide (rGO) highly influence filler morphology and the overall dielectric performance of rGO-relaxor ferroelectric polymer nanocomposite. Specifically, we show that nitrogen-doping by hydrazine along the edges of reduced graphene oxide embedded in poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) results in a dielectric permittivity above 10 000 while maintaining a dielectric loss below 2. This is one of the best-reported dielectric constant/dielectric loss performance values. In contrast, rGO produced by the hydrothermal reduction route shows a much lower enhancement, reaching a maximum dielectric permittivity of 900. Furthermore, functional derivatives present in rGO are found to strongly affect the quality of dispersion and the resultant percolation threshold at low loading levels. However, high leakage currents and lowered breakdown voltages offset the advantages of increased capacitance in these ultrahigh-k systems, resulting in no significant improvement in stored energy density. © 2014 American Chemical Society.

  5. (RTO) Characterization of the Time-dependent Behaviour of Dielectric Barrier Discharge Plasma Actuators

    Science.gov (United States)

    2014-06-19

    excited by a sine -wave signal with peak- to-peak amplitudes between 7.2 kV and 10 kV, and frequencies of 2.5 kHz and 4 kHz. The results indicate that the...side length of 0.68 m, made of transparent PMMA, to isolate it from ambient disturbances. The plasma actuator was excited by a sine -wave signal, which... Portugal , 2008. 6Hanson, R., Houser, N., and Lavoie, P., “Dielectric material degradation monitoring of dielectric barrier discharge plasma actuators

  6. Ferroelectric dielectrics integrated on silicon

    CERN Document Server

    Defay, Emmanuel

    2013-01-01

    This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies.After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterizat

  7. Ionic Structure at Dielectric Interfaces

    Science.gov (United States)

    Jing, Yufei

    The behavior of ions in liquids confined between macromolecules determines the outcome of many nanoscale assembly processes in synthetic and biological materials such as colloidal dispersions, emulsions, hydrogels, DNA, cell membranes, and proteins. Theoretically, the macromolecule-liquid boundary is often modeled as a dielectric interface and an important quantity of interest is the ionic structure in a liquid confined between two such interfaces. The knowledge gleaned from the study of ionic structure in such models can be useful in several industrial applications, such as biosensors, lithium-ion batteries double-layer supercapacitors for energy storage and seawater desalination. Electrostatics plays a critical role in the development of such functional materials. Many of the functions of these materials, result from charge and composition heterogeneities. There are great challenges in solving electrostatics problems in heterogeneous media with arbitrary shapes because electrostatic interactions remains unknown but depend on the particular density of charge distributions. Charged molecules in heterogeneous media affect the media's dielectric response and hence the interaction between the charges is unknown since it depends on the media and on the geometrical properties of the interfaces. To determine the properties of heterogeneous systems including crucial effects neglected in classical mean field models such as the hard core of the ions, the dielectric mismatch and interfaces with arbitrary shapes. The effect of hard core interactions accounts properly for short range interactions and the effect of local dielectric heterogeneities in the presence of ions and/or charged molecules for long-range interactions are both analyzed via an energy variational principle that enables to update charges and the medium's response in the same simulation time step. In particular, we compute the ionic structure in a model system of electrolyte confined by two planar dielectric

  8. Broadband cloaking using composite dielectrics

    Directory of Open Access Journals (Sweden)

    Ruey-Bing Hwang

    2011-03-01

    Full Text Available In this paper, we present a novel cloaking structure that is able to make a metallic block invisible in a metallic waveguide. Such a cloak is made up of a stack of commonly used dielectric slabs. We carry out the numerical simulation and observe the detour of the vector Poynting power through the cloak. Moreover, the experiment is conducted for measuring the scattering characteristics including the reflection and transmission coefficients. The great improvement in the transmission coefficient in a broad bandwidth after cloaking is demonstrated. Significantly, the theory of mode conversion is developed for explaining the cloaking phenomenon.

  9. Modular High Voltage Power Supply

    Energy Technology Data Exchange (ETDEWEB)

    Newell, Matthew R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-05-18

    The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

  10. High thermal conductivity lossy dielectric using a multi layer configuration

    Science.gov (United States)

    Tiegs, Terry N.; Kiggans, Jr., James O.

    2003-01-01

    Systems and methods are described for loss dielectrics. A loss dielectric includes at least one high dielectric loss layer and at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. A method of manufacturing a loss dielectric includes providing at least one high dielectric loss layer and providing at least one high thermal conductivity-electrically insulating layer adjacent the at least one high dielectric loss layer. The systems and methods provide advantages because the loss dielectrics are less costly and more environmentally friendly than the available alternatives.

  11. Reliability criteria for voltage stability

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Carson W; Silverstein, Brian L [Bonneville Power Administration, Portland, OR (United States)

    1994-12-31

    In face of costs pressures, there is need to allocate scare resources more effectively in order to achieve voltage stability. This naturally leads to development of probabilistic criteria and notions of rick management. In this paper it is presented a discussion about criteria for long term voltage stability limited to the case in which the time frames are topically several minutes. (author) 14 refs., 1 fig.

  12. High voltage distributions in RPCs

    International Nuclear Information System (INIS)

    Inoue, Y.; Muranishi, Y.; Nakamura, M.; Nakano, E.; Takahashi, T.; Teramoto, Y.

    1996-01-01

    High voltage distributions on the inner surfaces of RPCs electrodes were calculated by using a two-dimensional resistor network model. The calculated result shows that the surface resistivity of the electrodes should be high, compared to their volume resistivity, to get a uniform high voltage over the surface. Our model predicts that the rate capabilities of RPCs should be inversely proportional to the thickness of the electrodes if the ratio of surface-to-volume resistivity is low. (orig.)

  13. Perhydropolysilazane spin-on dielectrics for inter-layer-dielectric applications of sub-30 nm silicon technology

    International Nuclear Information System (INIS)

    Kim, Sam-Dong; Ko, Pil-Seok; Park, Kyoung-Seok

    2013-01-01

    Various material properties of the perhydropolysilazane spin-on dielectric (PHPS SOD) were examined and analyzed in this study as potential inter-layer dielectrics (ILDs) integrated for Si circuits of 30 nm technology or beyond. The spin-coated PHPS (18.5 wt%) layers converted at 650 °C showed comparable but less perfect thermal conversion to silica than the films converted at 1000 °C, however exhibiting excellent gap filling (15 nm gap opening, aspect ratio (AR) of ∼23) and planarization (degree of planarization (DOP) = ∼73% for 800 nm initial step height, cusp angle = ∼16°) sufficient for the Si integration. PHPS SOD layers cured at 650 °C were integrated ILDs in the 0.18 µm Si front-end-of-the-line process, and the estimated hot-carrier reliability of n-channel metal oxide semiconductor transistors (ten years at a drain voltage of 1.68 V) had no significant difference from that of the transistors integrated with the conventional borophosposilicate glass ILDs. A modified contact pre-cleaning scheme using N 2 O plasma treatment also produced uniform and stable contact chain resistances from the SOD ILDs. (paper)

  14. Macroeconomic Assessment of Voltage Sags

    Directory of Open Access Journals (Sweden)

    Sinan Küfeoğlu

    2016-12-01

    Full Text Available The electric power sector has changed dramatically since the 1980s. Electricity customers are now demanding uninterrupted and high quality service from both utilities and authorities. By becoming more and more dependent on the voltage sensitive electronic equipment, the industry sector is the one which is affected the most by voltage disturbances. Voltage sags are one of the most crucial problems for these customers. The utilities, on the other hand, conduct cost-benefit analyses before going through new investment projects. At this point, understanding the costs of voltage sags become imperative for planning purposes. The characteristics of electric power consumption and hence the susceptibility against voltage sags differ considerably among different industry subsectors. Therefore, a model that will address the estimation of worth of electric power reliability for a large number of customer groups is necessary. This paper introduces a macroeconomic model to calculate Customer Voltage Sag Costs (CVSCs for the industry sector customers. The proposed model makes use of analytical data such as value added, annual energy consumption, working hours, and average outage durations and provides a straightforward, credible, and easy to follow methodology for the estimation of CVSCs.

  15. A matter of quantum voltages

    Energy Technology Data Exchange (ETDEWEB)

    Sellner, Bernhard; Kathmann, Shawn M., E-mail: Shawn.Kathmann@pnnl.gov [Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

    2014-11-14

    Voltages inside matter are relevant to crystallization, materials science, biology, catalysis, and aqueous chemistry. The variation of voltages in matter can be measured by experiment, however, modern supercomputers allow the calculation of accurate quantum voltages with spatial resolutions of bulk systems well beyond what can currently be measured provided a sufficient level of theory is employed. Of particular interest is the Mean Inner Potential (V{sub o}) – the spatial average of these quantum voltages referenced to the vacuum. Here we establish a protocol to reliably evaluate V{sub o} from quantum calculations. Voltages are very sensitive to the distribution of electrons and provide metrics to understand interactions in condensed phases. In the present study, we find excellent agreement with measurements of V{sub o} for vitrified water and salt crystals and demonstrate the impact of covalent and ionic bonding as well as intermolecular/atomic interactions. Certain aspects in this regard are highlighted making use of simple model systems/approximations. Furthermore, we predict V{sub o} as well as the fluctuations of these voltages in aqueous NaCl electrolytes and characterize the changes in their behavior as the resolution increases below the size of atoms.

  16. Synthesis and characterization of multiferroic Sm-doped BiFeO{sub 3} nanopowders and their bulk dielectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Yotburut, Benjaporn [School of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); Thongbai, Prasit [Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002 (Thailand); Yamwong, Teerapon [National Metals and Materials Technology Center (MTEC), Thailand Science Park, Pathumthani 12120 (Thailand); Maensiri, Santi, E-mail: santimaensiri@g.sut.ac.th [School of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); SUT Center of Excellence on Advanced Functional Materials, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand)

    2017-09-01

    Highlights: • Bi{sub 1−x}Sm{sub x}FeO{sub 3} nanopowders were prepared by a simple co-precipitation method. • The prepared samples were well characterized by XRD, TEM, SEM, and XAS. • The XANES spectra identified the valence state of Fe ion in all nanopowders as 3+. • Increasing in applied dc bias voltage from 0 to 20 V causes a decrease in the dielectric constant. • The relaxation activation energy of a LFR is larger than that of a HFR. - Abstract: Multiferroic Bi{sub 1−x}Sm{sub x}FeO{sub 3} (x = 0, 0.05, 0.1, 0.2, and 0.3) nanopowders with particle sizes of 69–22.6 nm were prepared by a simple co-precipitation method. The structure and morphology of the samples were examined using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD patterns confirmed the phase transition from rhombohedral to orthorhombic phases. The results of X-ray absorption spectroscopy (XAS) data indicate that the oxidation state of Fe in the sample was Fe{sup 3+}. The results of magnetic properties revealed the enhancement of weak ferromagnetic property with increasing Sm doping in BFO nanopowders. SEM images revealed that the average grain size decreased with an increase in Sm concentration. Undoped BFO ceramics exhibited a high dielectric constant ε′ ∼1.1 × 10{sup 4} and a low loss tangent of tan δ ∼0.5 at room temperature for 1 kHz. The room temperature dielectric constant decreased with increasing concentration of Sm doping and the dielectric relaxation peaks were observed at x ≤ 0.1. The dielectric relaxation peaks which were observed at all frequency ranges were x ≤ 0.1 samples which were attributed to Maxwell-Wagner relaxation. As the temperature increased, great increases in dielectric permittivity were observed in all the Bi{sub 1−x}Sm{sub x}FeO{sub 3} samples. The effects of grain boundaries on the dielectric properties of Sm-doped BFO ceramics were investigated by measuring the dielectric responds in the frequencies of 100 Hz–1

  17. Thermally stimulated discharge current (TSDC) and dielectric ...

    Indian Academy of Sciences (India)

    Unknown

    2001-10-09

    Oct 9, 2001 ... Measurements of TSDC and dielectric constant, ε′, have been ... Keywords. Semiconducting glass; TSDC; trap energy; dielectric constant. 1. ... determination of mean depth of the internal charge, activation ... thermal charging, viz. (i) internal ... the basis of d.c. conductivity and short range Na+ ion motion.

  18. Dielectric spectroscopy of watermelons for quality sensing

    Science.gov (United States)

    Nelson, Stuart O.; Guo, Wen-chuan; Trabelsi, Samir; Kays, Stanley J.

    2007-07-01

    Dielectric properties of four small-sized watermelon cultivars, grown and harvested to provide a range of maturities, were measured with an open-ended coaxial-line probe and an impedance analyser over the frequency range from 10 MHz to 1.8 GHz. Probe measurements were made on the external surface of the melons and also on tissue samples from the edible internal tissue. Moisture content and soluble solids content (SSC) were measured for internal tissue samples, and SSC (sweetness) was used as the quality factor for correlation with the dielectric properties. Individual dielectric constant and loss factor correlations with SSC were low, but a high correlation was obtained between the SSC and permittivity from a complex-plane plot of dielectric constant and loss factor, each divided by SSC. However, SSC prediction from the dielectric properties by this relationship was not as high as expected (coefficient of determination about 0.4). Permittivity data (dielectric constant and loss factor) for the melons are presented graphically to show their relationships with frequency for the four melon cultivars and for external surface and internal tissue measurements. A dielectric relaxation for the external surface measurements, which may be attributable to a combination of bound water, Maxwell-Wagner, molecular cluster or ion-related effects, is also illustrated. Coefficients of determination for complex-plane plots, moisture content and SSC relationship, and penetration depth are also shown graphically. Further studies are needed for determining the practicality of sensing melon quality from their dielectric properties.

  19. Dielectric material options for integrated capacitors

    NARCIS (Netherlands)

    Ruhl, G.; Lehnert, W.; Lukosius, M.; Wenger, C.; Baristiran Kaynak, C.; Blomberg, T.; Haukka, S.; Baumann, P.K.; Besling, W.F.A.; Roest, A.L.; Riou, B.; Lhostis, S.; Halimaou, A.; Roozeboom, F.; Langereis, E.; Kessels, W.M.M.; Zauner, A.; Rushworth, S.A.

    2014-01-01

    Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor

  20. Analysis of electron interactions in dielectric gases

    International Nuclear Information System (INIS)

    Olivet, Aurelio; Duque, Daniel; Vega, Lourdes F.

    2007-01-01

    We present and discuss results concerning electron interactions processes of dielectric gases and their relationship with the macroscopic behavior of these gases, in particular, with their dielectric strength. Such analysis is based on calculating energies of reactions for molecular ionization, dissociative ionization, parent negative ion formation, and dissociative electron attachment processes. We hypothesize that the estimation of the required energy for a reduced number of processes that take place in electrically stressed gases could be related to the gas' capability to manage the electron flow during an electrical discharge. All calculations were done with semiempirical quantum chemistry methods, including an initial optimization of molecular geometry and heat of formation of the dielectric gases and all of species that appear during electron interaction reactions. The performance of semiempirical methods Austin model 1 and Parametric model 3 (PM3) was compared for several compounds, PM3 being superior in most cases. Calculations performed for a sample of nine dielectric gases show that electron attachment and detachment processes occur in different energy bands that do not overlap for any value of the dielectric strength. We have also analyzed the relationship between dielectric strength and two physical properties: electron affinity and ionization energy. Calculations performed for 43 dielectric gases show no clear correlation between them, although certain guidelines for the qualitative estimation of dielectric strength can still be assessed

  1. Aging of Dielectric Properties below Tg

    DEFF Research Database (Denmark)

    Olsen, Niels Boye; Dyre, Jeppe; Christensen, Tage Emil

    The dielectric loss at 1Hz in TPP is studied during a temperature step from one equilibrium state to another. In the applied cryostate the temperature can be equilibrated on a timescale of 1 second. The aging time dependence of the dielectric loss is studied below Tg applying temperature steps...

  2. Conversion of methane to methanol in an ac dielectric barrier discharge

    International Nuclear Information System (INIS)

    Aghamir, F M; Matin, N S; Jalili, A H; Esfarayeni, M H; Khodagholi, M A; Ahmadi, R

    2004-01-01

    A dielectric barrier discharge (DBD) has been used to investigate the conversion of methane to methanol and higher hydrocarbons in ac non-equilibrium plasmas. Experiments were carried out at atmospheric pressure and ambient temperature. A non-equilibrium plasma was generated in a DBD reactor by applying a high voltage to the reactor electrodes. Activation of methane molecules led to the production of C 2 hydrocarbons and methanol. The effect of the applied voltage, residence time and feed mixture such as helium and oxygen on the methane conversion and product selectivity was studied. Helium appears to have no effect on the conversion and selectivity at our applied voltages. The methane conversion increases significantly on introduction of oxygen in the feed stream. Inclusion of oxygen leads to the formation of methanol. Our results show that production of methanol is initiated around an applied voltage of 12 kV and the conversion of methane increases with increasing voltage and residence time, while the product selectivity is independent of the applied voltage

  3. The memory effect of a pentacene field-effect transistor with a polarizable gate dielectric

    Science.gov (United States)

    Unni, K. N. N.; de Bettignies, Remi; Dabos-Seignon, Sylvie; Nunzi, Jean-Michel

    2004-06-01

    The nonvolatile transistor memory element is an interesting topic in organic electronics. In this case a memory cell consists of only one device where the stored information is written as a gate insulator polarization by a gate voltage pulse and read by the channel conductance control with channel voltage pulse without destruction of the stored information. Therefore such transistor could be the base of non-volatile non-destructively readable computer memory of extremely high density. Also devices with polarizable gate dielectrics can function more effectively in certain circuits. The effective threshold voltage Vt can be brought very close to zero, for applications where the available gate voltage is limited. Resonant and adaptive circuits can be tuned insitu by polarizing the gates. Poly(vinylidene fluoride), PVDF and its copolymer with trifluoroethylene P(VDF-TrFE) are among the best known and most widely used ferroelectric polymers. In this manuscript, we report new results of an organic FET, fabricated with pentacene as the active material and P(VDF-TrFE) as the gate insulator. Application of a writing voltage of -50 V for short duration results in significant change in the threshold voltage and remarkable increase in the drain current. The memory effect is retained over a period of 20 hours.

  4. Microscopic resolution broadband dielectric spectroscopy

    International Nuclear Information System (INIS)

    Mukherjee, S; Watson, P; Prance, R J

    2011-01-01

    Results are presented for a non-contact measurement system capable of micron level spatial resolution. It utilises the novel electric potential sensor (EPS) technology, invented at Sussex, to image the electric field above a simple composite dielectric material. EP sensors may be regarded as analogous to a magnetometer and require no adjustments or offsets during either setup or use. The sample consists of a standard glass/epoxy FR4 circuit board, with linear defects machined into the surface by a PCB milling machine. The sample is excited with an a.c. signal over a range of frequencies from 10 kHz to 10 MHz, from the reverse side, by placing it on a conducting sheet connected to the source. The single sensor is raster scanned over the surface at a constant working distance, consistent with the spatial resolution, in order to build up an image of the electric field, with respect to the reference potential. The results demonstrate that both the surface defects and the internal dielectric variations within the composite may be imaged in this way, with good contrast being observed between the glass mat and the epoxy resin.

  5. Microscopic resolution broadband dielectric spectroscopy

    Science.gov (United States)

    Mukherjee, S.; Watson, P.; Prance, R. J.

    2011-08-01

    Results are presented for a non-contact measurement system capable of micron level spatial resolution. It utilises the novel electric potential sensor (EPS) technology, invented at Sussex, to image the electric field above a simple composite dielectric material. EP sensors may be regarded as analogous to a magnetometer and require no adjustments or offsets during either setup or use. The sample consists of a standard glass/epoxy FR4 circuit board, with linear defects machined into the surface by a PCB milling machine. The sample is excited with an a.c. signal over a range of frequencies from 10 kHz to 10 MHz, from the reverse side, by placing it on a conducting sheet connected to the source. The single sensor is raster scanned over the surface at a constant working distance, consistent with the spatial resolution, in order to build up an image of the electric field, with respect to the reference potential. The results demonstrate that both the surface defects and the internal dielectric variations within the composite may be imaged in this way, with good contrast being observed between the glass mat and the epoxy resin.

  6. Novel high-voltage power lateral MOSFET with adaptive buried electrodes

    International Nuclear Information System (INIS)

    Zhang Wen-Tong; Wu Li-Juan; Qiao Ming; Luo Xiao-Rong; Zhang Bo; Li Zhao-Ji

    2012-01-01

    A new high-voltage and low-specific on-resistance (R on,sp ) adaptive buried electrode (ABE) silicon-on-insulator (SOI) power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide (BOX) layer, the negative drain voltage V d is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than the electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field E I and the breakdown voltage (BV) of ABE SOI are 545 V/μm and −587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low R on,sp is obtained. Furthermore, the structure also alleviates the self-heating effect (SHE). The analytical model matches the simulation results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Dielectric response of molecules in empirical tight-binding theory

    Science.gov (United States)

    Boykin, Timothy B.; Vogl, P.

    2002-01-01

    In this paper we generalize our previous approach to electromagnetic interactions within empirical tight-binding theory to encompass molecular solids and isolated molecules. In order to guarantee physically meaningful results, we rederive the expressions for relevant observables using commutation relations appropriate to the finite tight-binding Hilbert space. In carrying out this generalization, we examine in detail the consequences of various prescriptions for the position and momentum operators in tight binding. We show that attempting to fit parameters of the momentum matrix directly generally results in a momentum operator which is incompatible with the underlying tight-binding model, while adding extra position parameters results in numerous difficulties, including the loss of gauge invariance. We have applied our scheme, which we term the Peierls-coupling tight-binding method, to the optical dielectric function of the molecular solid PPP, showing that this approach successfully predicts its known optical properties even in the limit of isolated molecules.

  8. Peltier Effect Based Temperature Controlled System for Dielectric Spectroscopy

    Science.gov (United States)

    Mukda, T.; Jantaratana, P.

    2017-09-01

    The temperature control system was designed and built for application in dielectric spectroscopy. It is based on the dual-stage Peltier element that decreases electrical power and no cryogenic fluids are required. A proportional integral derivative controller was used to keep the temperature stability of the system. A Pt100 temperature sensor was used to measure temperature of the sample mounting stage. Effect of vacuum isolation and water-cooling on accuracy and stability of the system were also studied. With the incorporation of vacuum isolation and water-cooling at 18 °C, the temperature of the sample under test can be controlled in the range of -40 °C to 150 °C with temperature stability ± 0.025 °C.

  9. Numerical investigation of dielectric barrier discharges

    Science.gov (United States)

    Li, Jing

    1997-12-01

    A dielectric barrier discharge (DBD) is a transient discharge occurring between two electrodes in coaxial or planar arrangements separated by one or two layers of dielectric material. The charge accumulated on the dielectric barrier generates a field in a direction opposite to the applied field. The discharge is quenched before an arc is formed. It is one of the few non-thermal discharges that operates at atmospheric pressure and has the potential for use in pollution control. In this work, a numerical model of the dielectric barrier discharge is developed, along with the numerical approach. Adaptive grids based on the charge distribution is used. A self-consistent method is used to solve for the electric field and charge densities. The Successive Overrelaxation (SOR) method in a non-uniform grid spacing is used to solve the Poisson's equation in the cylindrically-symmetric coordinate. The Flux Corrected Transport (FCT) method is modified to solve the continuity equations in the non-uniform grid spacing. Parametric studies of dielectric barrier discharges are conducted. General characteristics of dielectric barrier discharges in both anode-directed and cathode-directed streamer are studied. Effects of the dielectric capacitance, the applied field, the resistance in external circuit and the type of gases (O2, air, N2) are investigated. We conclude that the SOR method in an adaptive grid spacing for the solution of the Poisson's equation in the cylindrically-symmetric coordinate is convergent and effective. The dielectric capacitance has little effect on the g-factor of radical production, but it determines the strength of the dielectric barrier discharge. The applied field and the type of gases used have a significant role on the current peak, current pulse duration and radical generation efficiency, discharge strength, and microstreamer radius, whereas the external series resistance has very little effect on the streamer properties. The results are helpful in

  10. Conversion of Dielectric Data from the Time Domain to the Frequency Domain

    Directory of Open Access Journals (Sweden)

    Vladimir Durman

    2005-01-01

    Full Text Available Polarisation and conduction processes in dielectric systems can be identified by the time domain or the frequency domain measurements. If the systems is a linear one, the results of the time domain measurements can be transformed into the frequency domain, and vice versa. Commonly, the time domain data of the absorption conductivity are transformed into the frequency domain data of the dielectric susceptibility. In practice, the relaxation are mainly evaluated by the frequency domain data. In the time domain, the absorption current measurement were prefered up to now. Recent methods are based on the recovery voltage measurements. In this paper a new method of the recovery data conversion from the time the frequency domain is proposed. The method is based on the analysis of the recovery voltage transient based on the Maxwell equation for the current density in a dielectric. Unlike the previous published solutions, the Laplace fransform was used to derive a formula suitable for practical purposes. the proposed procedure allows also calculating of the insulation resistance and separating the polarisation and conduction losses.

  11. A novel method of calculating the energy deposition curve of nanosecond pulsed surface dielectric barrier discharge

    International Nuclear Information System (INIS)

    He, Kun; Wang, Xinying; Lu, Jiayu; Cui, Quansheng; Pang, Lei; Di, Dongxu; Zhang, Qiaogen

    2015-01-01

    To obtain the energy deposition curve is very important in the fields to which nanosecond pulse dielectric barrier discharges (NPDBDs) are applied. It helps the understanding of the discharge physics and fast gas heating. In this paper, an equivalent circuit model, composed of three capacitances, is introduced and a method of calculating the energy deposition curve is proposed for a nanosecond pulse surface dielectric barrier discharge (NPSDBD) plasma actuator. The capacitance C d and the energy deposition curve E R are determined by mathematically proving that the mapping from C d to E R is bijective and numerically searching one C d that satisfies the requirement for E R to be a monotonically non-decreasing function. It is found that the value of capacitance C d varies with the amplitude of applied pulse voltage due to the change of discharge area and is dependent on the polarity of applied voltage. The bijectiveness of the mapping from C d to E R in nanosecond pulse volumetric dielectric barrier discharge (NPVDBD) is demonstrated and the feasibility of the application of the new method to NPVDBD is validated. This preliminarily shows a high possibility of developing a unified approach to calculate the energy deposition curve in NPDBD. (paper)

  12. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Jaekyun Kim

    2015-10-01

    Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

  13. Electron current extraction from radio frequency excited micro-dielectric barrier discharges

    International Nuclear Information System (INIS)

    Wang, Jun-Chieh; Kushner, Mark J.; Leoni, Napoleon; Birecki, Henryk; Gila, Omer

    2013-01-01

    Micro dielectric barrier discharges (mDBDs) consist of micro-plasma devices (10–100 μm diameter) in which the electrodes are fully or partially covered by dielectrics, and often operate at atmospheric pressure driven with radio frequency (rf) waveforms. In certain applications, it may be desirable to extract electron current out of the mDBD plasma, which necessitates a third electrode. As a result, the physical structure of the m-DBD and the electron emitting properties of its materials are important to its operation. In this paper, results from a two-dimensional computer simulation of current extraction from mDBDs sustained in atmospheric pressure N 2 will be discussed. The mDBDs are sandwich structures with an opening of tens-of-microns excited with rf voltage waveforms of up to 25 MHz. Following avalanche by electron impact ionization in the mDBD cavity, the plasma can be expelled from the cavity towards the extraction electrode during the part of the rf cycle when the extraction electrode appears anodic. The electron current extraction can be enhanced by biasing this electrode. The charge collection can be controlled by choice of rf frequency, rf driving voltage, and permittivity of the dielectric barrier.

  14. Investigation on the performance of a viscoelastic dielectric elastomer membrane generator.

    Science.gov (United States)

    Zhou, Jianyou; Jiang, Liying; Khayat, Roger E

    2015-04-21

    Dielectric elastomer generators (DEGs), as a recent transduction technology, harvest electrical energy by scavenging mechanical energy from diverse sources. Their performance is affected by various material properties and failure modes of the dielectric elastomers. This work presents a theoretical analysis on the performance of a dielectric elastomer membrane generator under equi-biaxial loading conditions. By comparing our simulation results with the experimental observations existing in the literature, this work considers the fatigue life of DE-based devices under cyclic loading for the first time. From the simulation results, it is concluded that the efficiency of the DEG can be improved by raising the deforming rate and the prescribed maximum stretch ratio, and applying an appropriate bias voltage. However, the fatigue life expectancy compromises the efficiency improvement of the DEG. With the consideration of the fatigue life, applying an appropriate bias voltage appears to be a more desirable way to improve the DEG performance. The general framework developed in this work is expected to provide an increased understanding on the energy harvesting mechanisms of the DEGs and benefit their optimal design.

  15. Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics.

    Science.gov (United States)

    Nugraha, Mohamad I; Häusermann, Roger; Watanabe, Shun; Matsui, Hiroyuki; Sytnyk, Mykhailo; Heiss, Wolfgang; Takeya, Jun; Loi, Maria A

    2017-02-08

    We perform a quantitative analysis of the trap density of states (trap DOS) in PbS quantum dot field-effect transistors (QD-FETs), which utilize several polymer gate insulators with a wide range of dielectric constants. With increasing gate dielectric constant, we observe increasing trap DOS close to the lowest unoccupied molecular orbital (LUMO) of the QDs. In addition, this increase is also consistently followed by broadening of the trap DOS. We rationalize that the increase and broadening of the spectral trap distribution originate from dipolar disorder as well as polaronic interactions, which are appearing at strong dielectric polarization. Interestingly, the increased polaron-induced traps do not show any negative effect on the charge carrier mobility in our QD devices at the highest applied gate voltage, giving the possibility to fabricate efficient low-voltage QD devices without suppressing carrier transport.

  16. Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

    International Nuclear Information System (INIS)

    Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

    2015-01-01

    We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr 0.52 Ti 0.48 )-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g m -V g ) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric

  17. Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Tao [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China); Xu, Ruimin [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Kong, Yuechan, E-mail: kycfly@163.com; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng [Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China)

    2015-06-15

    We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

  18. Mitigation of voltage sags in the distribution system with dynamic voltage restorer

    International Nuclear Information System (INIS)

    Viglas, D.; Belan, A.

    2012-01-01

    Dynamic voltage restorer is a custom power device that is used to improve voltage sags or swells in electrical distribution system. The components of the Dynamic Voltage Restorer consist of injection transformers, voltage source inverter, passive filters and energy storage. The main function of the Dynamic voltage restorer is used to inject three phase voltage in series and in synchronism with the grid voltages in order to compensate voltage disturbances. This article deals with mitigation of voltage sags caused by three-phase short circuit. Dynamic voltage restorer is modelled in MATLAB/Simulink. (Authors)

  19. High-voltage test stand at Livermore

    International Nuclear Information System (INIS)

    Smith, M.E.

    1977-01-01

    This paper describes the present design and future capability of the high-voltage test stand for neutral-beam sources at Lawrence Livermore Laboratory. The stand's immediate use will be for testing the full-scale sources (120 kV, 65 A) for the Tokamak Fusion Test Reactor. It will then be used to test parts of the sustaining source system (80 kV, 85 A) being designed for the Magnetic Fusion Test Facility. Following that will be an intensive effort to develop beams of up to 200 kV at 20 A by accelerating negative ions. The design of the test stand features a 5-MVA power supply feeding a vacuum tetrode that is used as a switch and regulator. The 500-kW arc supply and the 100-kW filament supply for the neutral-beam source are battery powered, thus eliminating one or two costly isolation transformers

  20. High Voltage Design Considerations for the Electrostatic Septum for the Mu2e Beam Resonant

    Energy Technology Data Exchange (ETDEWEB)

    Alvarez, Matthew L. [Fermilab; Jensen, C.; Morris, D.; Nagaslaev, V.; Pham, H.; Tinsley, D.

    2018-04-01

    aTwo electrostatic septa (ESS) are being designed for the slow extraction of 8GeV proton beam for the Mu2e experiment at Fermilab. Special attention is given to the high voltage components that affect the performance of the septa. The components under consideration are the high voltage (HV) feedthrough, cathode standoff (CS), and clearing electrode ceramic standoffs (CECS). Previous experience with similar HV systems at Fermilab was used to define the evaluation criteria of the design of the high voltage components. Using electric field simulation software, high E-field intensities on the components and integrated field strength along the surface of the dielectric material were minimized. Here we discuss the limitations found and improvements made based on those studies.

  1. Ultraviolet laser-induced voltage in anisotropic shale

    Science.gov (United States)

    Miao, Xinyang; Zhu, Jing; Li, Yizhang; Zhao, Kun; Zhan, Honglei; Yue, Wenzheng

    2018-01-01

    The anisotropy of shales plays a significant role in oil and gas exploration and engineering. Owing to various problems and limitations, anisotropic properties were seldom investigated by direct current resistivity methods. Here in this work, a 248 nm ultraviolet laser was employed to assess the anisotropic electrical response of a dielectric shale. Angular dependence of laser-induced voltages (V p) were obtained, with a data symmetry at the location of 180° and a ~62.2% V p anisotropy of the sample. The double-exponential functions have provided an explanation for the electrical field controlled carrier transportation process in horizontal and vertical directions. The results demonstrate that the combination of optics and electrical logging analysis (Opti-electrical Logging) is a promising technology for the investigation of unconventional reservoirs.

  2. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    International Nuclear Information System (INIS)

    Lin, Y. H.; Chou, J. C.

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

  3. Effect of nanocomposite gate-dielectric properties on pentacene microstructure and field-effect transistor characteristics.

    Science.gov (United States)

    Lee, Wen-Hsi; Wang, Chun-Chieh

    2010-02-01

    In this study, the effect of surface energy and roughness of the nanocomposite gate dielectric on pentacene morphology and electrical properties of pentacene OTFT are reported. Nanoparticles TiO2 were added in the polyimide matrix to form a nanocomposite which has a significantly different surface characteristic from polyimide, leading to a discrepancy in the structural properties of pentacene growth. A growth mode of pentacene deposited on the nanocomposite is proposed to explain successfully the effect of surface properties of nanocomposite gate dielectric such as surface energy and roughness on the pentacene morphology and electrical properties of OTFT. To obtain the lower surface energy and smoother surface of nanocomposite gate dielectric that is responsible for the desired crystalline, microstructure of pentacene and electrical properties of device, a bottom contact OTFT-pentacene deposited on the double-layer nanocomposite gate dielectric consisting of top smoothing layer of the neat polyimide and bottom layer of (PI+ nano-TiO2 particles) nanocomposite has been successfully demonstrated to exhibit very promising performance including high current on to off ratio of about 6 x 10(5), threshold voltage of -10 V and moderately high filed mobility of 0.15 cm2V(-1)s(-1).

  4. A general centroid determination methodology, with application to multilayer dielectric structures and thermally stimulated current measurements

    International Nuclear Information System (INIS)

    Miller, S.L.; Fleetwood, D.M.; McWhorter, P.J.; Reber, R.A. Jr.; Murray, J.R.

    1993-01-01

    A general methodology is developed to experimentally characterize the spatial distribution of occupied traps in dielectric films on a semiconductor. The effects of parasitics such as leakage, charge transport through more than one interface, and interface trap charge are quantitatively addressed. Charge transport with contributions from multiple charge species is rigorously treated. The methodology is independent of the charge transport mechanism(s), and is directly applicable to multilayer dielectric structures. The centroid capacitance, rather than the centroid itself, is introduced as the fundamental quantity that permits the generic analysis of multilayer structures. In particular, the form of many equations describing stacked dielectric structures becomes independent of the number of layers comprising the stack if they are expressed in terms of the centroid capacitance and/or the flatband voltage. The experimental methodology is illustrated with an application using thermally stimulated current (TSC) measurements. The centroid of changes (via thermal emission) in the amount of trapped charge was determined for two different samples of a triple-layer dielectric structure. A direct consequence of the TSC analyses is the rigorous proof that changes in interface trap charge can contribute, though typically not significantly, to thermally stimulated current

  5. Abatement of malodorants from pesticide factory in dielectric barrier discharges

    International Nuclear Information System (INIS)

    Chen Jie; Yang Jiantao; Pan Hua; Su Qingfa; Liu Yamin; Shi Yao

    2010-01-01

    Traditional odor control methods are limitative technically and economically for the abatement of odor from pesticide factory due to its toxicity and complicated composition. Non-thermal plasma (NTP) methods, typically characterized by high removal efficiency, energy yields and good economy, offer possible alternative solutions. This paper provides laboratory scale experimental data on the removal of simulated odors from pesticide factory with various humidity (0-0.8 vol%) and oxygen contents (0-21%) by a dielectric barrier discharge (DBD) reactor. Peak voltage and initial dimethylamine (DML) concentration are important factors that influence the DML removal efficiency and energy yield. The conversion of DML of 761 mg/m 3 reaches 100% at a peak voltage of 41.25 kV. Under the experiment conditions, the conversion of DML increases with an increase of oxygen contents. And the highest DML conversion was achieved with the gas stream containing 0.3% water. Simultaneously, the concentration of O 3 and OH radical in reactor was measured. Higher conversion, higher energy yield and fewer byproducts were found in mixed odor (DML + dimethyl sulfide (DMS)) treatment than that in single odor treatment. The energy yield is promoted from 2.13 to 5.20 mg/kJ.

  6. Soft mobile robots driven by foldable dielectric elastomer actuators

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Wenjie; Liu, Fan; Ma, Ziqi; Li, Chenghai; Zhou, Jinxiong, E-mail: jxzhouxx@mail.xjtu.edu.cn [State Key Laboratory for Strength and Vibration of Mechanical Structures and School of Aerospace, Xi' an Jiaotong University, Xi' an 710049 (China)

    2016-08-28

    A cantilever beam with elastic hinge pulled antagonistically by two dielectric elastomer (DE) membranes in tension forms a foldable actuator if one DE membrane is subject to a voltage and releases part of tension. Simply placing parallel rigid bars on the prestressed DE membranes results in enhanced actuators working in a pure shear state. We report design, analysis, fabrication, and experiment of soft mobile robots that are moved by such foldable DE actuators. We describe systematic measurement of the foldable actuators and perform theoretical analysis of such actuators based on minimization of total energy, and a good agreement is achieved between model prediction and measurement. We develop two versions of prototypes of soft mobile robots driven either by two sets of DE membranes or one DE membrane and elastic springs. We demonstrate locomotion of these soft mobile robots and highlight several key design parameters that influence locomotion of the robots. A 45 g soft robot driven by a cyclic triangle voltage with amplitude 7.4 kV demonstrates maximal stroke 160 mm or maximal rolling velocity 42 mm/s. The underlying mechanics and physics of foldable DE actuators can be leveraged to develop other soft machines for various applications.

  7. Disclosed dielectric and electromechanical properties of hydrogenated nitrile–butadiene dielectric elastomer

    International Nuclear Information System (INIS)

    Yang, Dan; Tian, Ming; Dong, Yingchao; Liu, Haoliang; Yu, Yingchun; Zhang, Liqun

    2012-01-01

    This paper presents a comprehensive study of the effects of acrylonitrile content, crosslink density and plasticization on the dielectric and electromechanical performances of hydrogenated nitrile–butadiene dielectric elastomer. It was found that by increasing the acrylonitrile content of hydrogenated nitrile–butadiene dielectric elastomer, the dielectric constant will be improved accompanied with a sharp decrease of electrical breakdown strength leading to a small actuated strain. At a fixed electric field, a high crosslink density increased the elastic modulus of dielectric elastomer, but it also enhanced the electrical breakdown strength leading to a high actuated strain. Adding a plasticizer into the dielectric elastomer decreased the dielectric constant and electrical breakdown strength slightly, but reduced the elastic modulus sharply, which was beneficial for obtaining a large strain at low electric field from the dielectric elastomer. The largest actuated strain of 22% at an electric field of 30 kV mm −1 without any prestrain was obtained. Moreover, the hydrogenated nitrile–butadiene dielectric actuator showed good history dependence. This proposed material has great potential to be an excellent dielectric elastomer. (paper)

  8. THE STUDY OF HIGH DIELECTRIC CONSTANT MECHANISM OF La-DOPED Ba0.67Sr0.33TiO3 CERAMICS

    Science.gov (United States)

    Xu, Jing; He, Bo; Liu, Han Xing

    It is a common and effective method to enhance the dielectric properties of BST ceramics by adding rare-earth elements. In this paper, it is important to analyze the cause of the high dielectric constant behavior of La-doped BST ceramics. The results show that proper rare earth La dopant (0.2≤x≤0.7) may greatly increase the dielectric constant of BST ceramics, and also improve the temperature stability, evidently. According to the current-voltage (J-V) characteristics, the proper La-doped BST ceramics may reach the better semiconductivity, with the decrease and increase in La doping, the ceramics are insulators. By using the Schottky barrier model and electric microstructure model to find the surface or grain boundary potential barrier height, the width of the depletion layer and grain size do play an important role in impacting the dielectric constant.

  9. Production of atmospheric pressure diffuse nanosecond pulsed dielectric barrier discharge using the array needles-plate electrode in air

    International Nuclear Information System (INIS)

    Yang Dezheng; Wang Wenchun; Jia Li; Nie Dongxia; Shi Hengchao

    2011-01-01

    In this paper, a bidirectional high pulse voltage with 20 ns rising time is employed to generate an atmospheric pressure diffuse dielectric barrier discharge using the array needles-plate electrode configuration. Both double needle and multiple needle electrode configurations nanosecond pulsed dielectric barrier discharges are investigated. It is found that a diffuse discharge plasma with low gas temperature can be obtained, and the plasma volume increases with the increase of the pulse peak voltage, but remains almost constant with the increase of the pulse repetition rate. In addition to showing the potential application on a topographically nonuniform surface treatment of the discharge, the multiple needle-plate electrode configuration with different needle-plate electrode gaps are also employed to generate diffuse discharge plasma.

  10. A comparison of medium voltage static transfer switches and medium voltage mechanical transfer switches

    Energy Technology Data Exchange (ETDEWEB)

    Risko, W. P.

    2002-07-01

    Medium voltage static transfer switches (MVSTS) and medium voltage mechanical transfer switches (MVATS) perform a common function, namely selecting between two independent power sources to provide uninterrupted power to the loads. Although the functions are the same the method of performing that function is different and this method impacts the sources and connected load. This article describes the two methods of transfer -- mechanical and static -- their advantages and disadvantages, and their preferred applications. The MVSTS can be incorporated into many applications; it can work in conjunction with backup sources such as generators; and can replace generators as a low cost solution. The reliability of the MVSTS is very high; it also outperforms the MVATS with regard to transfer speed, and can react to anomalies in the same sub-cycle time frame. Because the design of the MVSTS is modular, it can be engineered and designed to fit into existing and future systems and applications, and can be used with different switchgear variations and protection arrangements. For example, load isolation and protection breakers can be added to the switchgear to provide flexibility and isolation.

  11. The color dielectric model of QCD

    International Nuclear Information System (INIS)

    Pirner, H.-J.; Massachusetts Inst. of Tech., Cambridge, MA; Massachusetts Inst. of Tech., Cambridge, MA

    1992-01-01

    This paper demonstrates the emergence of valence gluons and their bound states, the glueballs from perturbative quantum chromodynamics (QCD). We discuss the phenomenological constraints and theoretical method needed to generate effective glueballs actions. We show how color dielectric confinement works naively and in the lattice model of color dielectrics. This lattice model is derived for SU(2) color by a blockspinning Monte Carlo renormalization group procedure. We interpret the resulting long-distance as a strongly interacting lattice string theory where the valence link gluon fields randomize in the color dielectric background which mimics the integrated out high-frequency gluon modes in the vacuum. The fluctuations of the color dielectric fields are related to color neutral glueballs modes. We give the extension of this color dielectric SU(2) theory for general SU(N) with quarks and address the problems associated with combining confinement and chiral symmetry breaking. Finally we prove the efficiency of the effective theory in applications to the heavy quark system, the the baryon, to the nucleon-nucleon interaction, to baryon models and the gluon plasma transition. In all those cases the behavior of the higher energy gluons can be monitored via the color dielectric fields. An increase in the energy density from ''deconfining'' the higher frequency modes inside the flux tube or in thermally excited matter shows up as an increase in the value of the color dielectric field and its associated energy density. (Author)

  12. Non-linear dielectric spectroscopy of microbiological suspensions

    Science.gov (United States)

    Treo, Ernesto F; Felice, Carmelo J

    2009-01-01

    Background Non-linear dielectric spectroscopy (NLDS) of microorganism was characterized by the generation of harmonics in the polarization current when a microorganism suspension was exposed to a sinusoidal electric field. The biological nonlinear response initially described was not well verified by other authors and the results were susceptible to ambiguous interpretation. In this paper NLDS was performed to yeast suspension in tripolar and tetrapolar configuration with a recently developed analyzer. Methods Tripolar analysis was carried out by applying sinusoidal voltages up to 1 V at the electrode interface. Tetrapolar analysis was carried on with sinusoidal field strengths from 0.1 V cm-1 to 70 V cm-1. Both analyses were performed within a frequency range from 1 Hz through 100 Hz. The harmonic amplitudes were Fourier-analyzed and expressed in dB. The third harmonic, as reported previously, was investigated. Statistical analysis (ANOVA) was used to test the effect of inhibitor an activator of the plasma membrane enzyme in the measured response. Results No significant non-linearities were observed in tetrapolar analysis, and no observable changes occurred when inhibitor and activator were added to the suspension. Statistical analysis confirmed these results. When a pure sinus voltage was applied to an electrode-yeast suspension interface, variations higher than 25 dB for the 3rd harmonic were observed. Variation higher than 20 dB in the 3rd harmonics has also been found when adding an inhibitor or activator of the membrane-bounded enzymes. These variations did not occur when the suspension was boiled. Discussion The lack of result in tetrapolar cells suggest that there is no, if any, harmonic generation in microbiological bulk suspension. The non-linear response observed was originated in the electrode-electrolyte interface. The frequency and voltage windows observed in previous tetrapolar analysis were repeated in the tripolar measurements, but maximum were not

  13. Non-linear dielectric spectroscopy of microbiological suspensions

    Directory of Open Access Journals (Sweden)

    Felice Carmelo J

    2009-09-01

    Full Text Available Abstract Background Non-linear dielectric spectroscopy (NLDS of microorganism was characterized by the generation of harmonics in the polarization current when a microorganism suspension was exposed to a sinusoidal electric field. The biological nonlinear response initially described was not well verified by other authors and the results were susceptible to ambiguous interpretation. In this paper NLDS was performed to yeast suspension in tripolar and tetrapolar configuration with a recently developed analyzer. Methods Tripolar analysis was carried out by applying sinusoidal voltages up to 1 V at the electrode interface. Tetrapolar analysis was carried on with sinusoidal field strengths from 0.1 V cm-1 to 70 V cm-1. Both analyses were performed within a frequency range from 1 Hz through 100 Hz. The harmonic amplitudes were Fourier-analyzed and expressed in dB. The third harmonic, as reported previously, was investigated. Statistical analysis (ANOVA was used to test the effect of inhibitor an activator of the plasma membrane enzyme in the measured response. Results No significant non-linearities were observed in tetrapolar analysis, and no observable changes occurred when inhibitor and activator were added to the suspension. Statistical analysis confirmed these results. When a pure sinus voltage was applied to an electrode-yeast suspension interface, variations higher than 25 dB for the 3rd harmonic were observed. Variation higher than 20 dB in the 3rd harmonics has also been found when adding an inhibitor or activator of the membrane-bounded enzymes. These variations did not occur when the suspension was boiled. Discussion The lack of result in tetrapolar cells suggest that there is no, if any, harmonic generation in microbiological bulk suspension. The non-linear response observed was originated in the electrode-electrolyte interface. The frequency and voltage windows observed in previous tetrapolar analysis were repeated in the tripolar

  14. Standards for dielectric elastomer transducers

    International Nuclear Information System (INIS)

    Carpi, Federico; Frediani, Gabriele; Anderson, Iain; Bauer, Siegfried; Gallone, Giuseppe; Gei, Massimiliano; Graaf, Christian; Jean-Mistral, Claire; Kaal, William; Kofod, Guggi; Kollosche, Matthias; Kornbluh, Roy; Pelrine, Ron; Lassen, Benny; Rechenbach, Björn; Matysek, Marc; Michel, Silvain; Nowak, Stephan; O’Brien, Benjamin; Pei, Qibing

    2015-01-01

    Dielectric elastomer transducers consist of thin electrically insulating elastomeric membranes coated on both sides with compliant electrodes. They are a promising electromechanically active polymer technology that may be used for actuators, strain sensors, and electrical generators that harvest mechanical energy. The rapid development of this field calls for the first standards, collecting guidelines on how to assess and compare the performance of materials and devices. This paper addresses this need, presenting standardized methods for material characterisation, device testing and performance measurement. These proposed standards are intended to have a general scope and a broad applicability to different material types and device configurations. Nevertheless, they also intentionally exclude some aspects where knowledge and/or consensus in the literature were deemed to be insufficient. This is a sign of a young and vital field, whose research development is expected to benefit from this effort towards standardisation. (paper)

  15. Standards for dielectric elastomer transducers

    Science.gov (United States)

    Carpi, Federico; Anderson, Iain; Bauer, Siegfried; Frediani, Gabriele; Gallone, Giuseppe; Gei, Massimiliano; Graaf, Christian; Jean-Mistral, Claire; Kaal, William; Kofod, Guggi; Kollosche, Matthias; Kornbluh, Roy; Lassen, Benny; Matysek, Marc; Michel, Silvain; Nowak, Stephan; O'Brien, Benjamin; Pei, Qibing; Pelrine, Ron; Rechenbach, Björn; Rosset, Samuel; Shea, Herbert

    2015-10-01

    Dielectric elastomer transducers consist of thin electrically insulating elastomeric membranes coated on both sides with compliant electrodes. They are a promising electromechanically active polymer technology that may be used for actuators, strain sensors, and electrical generators that harvest mechanical energy. The rapid development of this field calls for the first standards, collecting guidelines on how to assess and compare the performance of materials and devices. This paper addresses this need, presenting standardized methods for material characterisation, device testing and performance measurement. These proposed standards are intended to have a general scope and a broad applicability to different material types and device configurations. Nevertheless, they also intentionally exclude some aspects where knowledge and/or consensus in the literature were deemed to be insufficient. This is a sign of a young and vital field, whose research development is expected to benefit from this effort towards standardisation.

  16. Low-Energy Real-Time OS Using Voltage Scheduling Algorithm for Variable Voltage Processors

    OpenAIRE

    Okuma, Takanori; Yasuura, Hiroto

    2001-01-01

    This paper presents a real-time OS based on $ mu $ITRON using proposed voltage scheduling algorithm for variable voltage processors which can vary supply voltage dynamically. The proposed voltage scheduling algorithms assign voltage level for each task dynamically in order to minimize energy consumption under timing constraints. Using the presented real-time OS, running tasks with low supply voltage leads to drastic energy reduction. In addition, the presented voltage scheduling algorithm is ...

  17. Development of a New Cascade Voltage-Doubler for Voltage Multiplication

    OpenAIRE

    Toudeshki, Arash; Mariun, Norman; Hizam, Hashim; Abdul Wahab, Noor Izzri

    2014-01-01

    For more than eight decades, cascade voltage-doubler circuits are used as a method to produce DC output voltage higher than the input voltage. In this paper, the topological developments of cascade voltage-doublers are reviewed. A new circuit configuration for cascade voltage-doubler is presented. This circuit can produce a higher value of the DC output voltage and better output quality compared to the conventional cascade voltage-doubler circuits, with the same number of stages.

  18. Influence of Conductive and Semi-Conductive Nanoparticles on the Dielectric Response of Natural Ester-Based Nanofluid Insulation

    Directory of Open Access Journals (Sweden)

    M. Z. H. Makmud

    2018-02-01

    Full Text Available Nowadays, studies of alternative liquid insulation in high voltage apparatus have become increasingly important due to higher concerns regarding safety, sustainable resources and environmentally friendly issues. To fulfil this demand, natural ester has been extensively studied and it can become a potential product to replace mineral oil in power transformers. In addition, the incorporation of nanoparticles has been remarkable in producing improved characteristics of insulating oil. Although much extensive research has been carried out, there is no general agreement on the influence on the dielectric response of base oil due to the addition of different amounts and conductivity types of nanoparticle concentrations. Therefore, in this work, a natural ester-based nanofluid was prepared by a two-step method using iron oxide (Fe2O3 and titanium dioxide (TiO2 as the conductive and semi-conductive nanoparticles, respectively. The concentration amount of each nanoparticle types was varied at 0.01, 0.1 and 1.0 g/L. The nanofluid samples were characterised by visual inspection, morphology and the dynamic light scattering (DLS method before the dielectric response measurement was carried out for frequency-dependent spectroscopy (FDS, current-voltage (I-V, and dielectric breakdown (BD strength. The results show that the dielectric spectra and I-V curves of nanofluid-based iron oxide increases with the increase of iron oxide nanoparticle loading, while for titanium dioxide, it exhibits a decreasing response. The dielectric BD strength is enhanced for both types of nanoparticles at 0.01 g/L concentration. However, the increasing amount of nanoparticles at 0.1 and 1.0 g/L led to a contrary dielectric BD response. Thus, the results indicate that the augmentation of conductive nanoparticles in the suspension can lead to overlapping mechanisms. Consequently, this reduces the BD strength compared to pristine materials during electron injection in high electric

  19. AC Voltage Control of DC/DC Converters Based on Modular Multilevel Converters in Multi-Terminal High-Voltage Direct Current Transmission Systems

    Directory of Open Access Journals (Sweden)

    Rui Li

    2016-12-01

    Full Text Available The AC voltage control of a DC/DC converter based on the modular multilevel converter (MMC is considered under normal operation and during a local DC fault. By actively setting the AC voltage according to the two DC voltages of the DC/DC converter, the modulation index can be near unity, and the DC voltage is effectively utilized to output higher AC voltage. This significantly decreases submodule (SM capacitance and conduction losses of the DC/DC converter, yielding reduced capital cost, volume, and higher efficiency. Additionally, the AC voltage is limited in the controllable range of both the MMCs in the DC/DC converter; thus, over-modulation and uncontrolled currents are actively avoided. The AC voltage control of the DC/DC converter during local DC faults, i.e., standby operation, is also proposed, where only the MMC connected on the faulty cable is blocked, while the other MMC remains operational with zero AC voltage output. Thus, the capacitor voltages can be regulated at the rated value and the decrease of the SM capacitor voltages after the blocking of the DC/DC converter is avoided. Moreover, the fault can still be isolated as quickly as the conventional approach, where both MMCs are blocked and the DC/DC converter is not exposed to the risk of overcurrent. The proposed AC voltage control strategy is assessed in a three-terminal high-voltage direct current (HVDC system incorporating a DC/DC converter, and the simulation results confirm its feasibility.

  20. Cavity Voltage Phase Modulation MD

    CERN Document Server

    Mastoridis, Themistoklis; Molendijk, John; Timko, Helga; CERN. Geneva. ATS Department

    2016-01-01

    The LHC RF/LLRF system is currently configured for extremely stable RF voltage to minimize transient beam loading effects. The present scheme cannot be extended beyond nominal beam current since the demanded power would exceed the peak klystron power and lead to saturation. A new scheme has therefore been proposed: for beam currents above nominal (and possibly earlier), the cavity phase modulation by the beam will not be corrected (transient beam loading), but the strong RF feedback and One-Turn Delay feedback will still be active for loop and beam stability in physics. To achieve this, the voltage set point will be adapted for each bunch. The goal of this MD was to test a new algorithm that would adjust the voltage set point to achieve the cavity phase modulation that would minimize klystron forward power.