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Sample records for voltage breakdown thin

  1. High frequency breakdown voltage

    International Nuclear Information System (INIS)

    Chu, Thanh Duy.

    1992-03-01

    This report contains information about the effect of frequency on the breakdown voltage of an air gap at standard pressure and temperature, 76 mm Hg and O degrees C, respectively. The frequencies of interest are 47 MHz and 60 MHz. Additionally, the breakdown in vacuum is briefly considered. The breakdown mechanism is explained on the basis of collision and ionization. The presence of the positive ions produced by ionization enhances the field in the gap, and thus determines the breakdown. When a low-frequency voltage is applied across the gap, the breakdown mechanism is the same as that caused by the DC or static voltage. However, when the frequency exceeds the first critical value f c , the positive ions are trapped in the gap, increasing the field considerably. This makes the breakdown occur earlier; in other words, the breakdown voltage is lowered. As the frequency increases two decades or more, the second critical frequency, f ce , is reached. This time the electrons start being trapped in the gap. Those electrons that travel multiple times across the gap before reaching the positive electrode result in an enormous number of electrons and positive ions being present in the gap. The result is a further decrease of the breakdown voltage. However, increasing the frequency does not decrease the breakdown voltage correspondingly. In fact, the associated breakdown field intensity is almost constant (about 29 kV/cm).The reason is that the recombination rate increases and counterbalances the production rate, thus reducing the effect of the positive ions' concentration in the gap. The theory of collision and ionization does not apply to the breakdown in vacuum. It seems that the breakdown in vacuum is primarily determined by the irregularities on the surfaces of the electrodes. Therefore, the effect of frequency on the breakdown, if any, is of secondary importance

  2. Analyzing randomly occurring voltage breakdowns

    International Nuclear Information System (INIS)

    Wiltshire, C.W.

    1977-01-01

    During acceptance testing of high-vacuum neutron tubes, 40% of the tubes failed after experiencing high-voltage breakdowns during the aging process. Use of a digitizer in place of an oscilloscope revealed two types of breakdowns, only one of which affected acceptance testing. This information allowed redesign of the aging sequence to prevent tube damage and improve yield and quality of the final product

  3. Voltage breakdown on niobium and copper surfaces

    International Nuclear Information System (INIS)

    Werner, G.R.; Padamsee, H.; Betzwieser, J.C.; Liu, Y.G.; Rubin, K.H.R.; Shipman, J.E.; Ying, L.T.

    2003-01-01

    Experiments have shown that voltage breakdown in superconducting niobium RF cavities is in many ways similar to voltage breakdown on niobium cathodes in DC voltage gaps; most striking are the distinctive starburst patterns and craters that mark the site of voltage breakdown in both superconducting cavities and DC vacuum gaps. Therefore, we can learn much about RF breakdown from simpler, faster DC experiments. We have direct evidence, in the form of before'' and ''after'' pictures, that breakdown events caused by high surface electric fields occur with high probability at contaminant particles on surfaces. Although the pre-breakdown behavior (field emission) seems to depend mostly on the contaminant particles present and little on the substrate, the breakdown event itself is greatly affected by the substrate-niobium, heavily oxidized niobium, electropolished copper, and diamond-machined copper cathodes lead to different kinds of breakdown events. By studying DC voltage breakdown we hope to learn more details about the processes involved in the transition from field emission to catastrophic arcing and the cratering of the surface; as well as learning how to prevent breakdown, we would like to learn how to cause breakdown, which could be important when ''processing'' cavities to reduce field emission. (author)

  4. Dispersion of breakdown voltage of liquid helium

    International Nuclear Information System (INIS)

    Ishii, Itaru; Noguchi, Takuya

    1978-01-01

    As for the electrical insulation characteristics of liquid helium, the discrepancy among the measured values by each person is very large even in the fundamental DC breakdown voltage in uniform electric field. The dispersion of experimental values obtained in the experiments by the same person is also large. Hereafter, the difference among the mean values obtained by each experimenter will be referred to as ''deviation of mean values'', and the dispersion of measured values around the mean value obtained by the same person as ''deviation around the man value''. The authors have mainly investigated on the latter experimentally. The cryostat was made of stainless steel, and the innermost helium chamber was of 500 mm I.D. and approximately 1200 mm deep. The high voltage electrode was of brass sphere of 25 mm diameter, and the low voltage electrode was of brass plate. The experiment was conducted for liquid helium boiling at 4.2 K and 1 atm, and the breakdown voltage and time lag were measured by applying the approximately square wave impulses of fast rise and long tail, ramp and DC voltages. The cause of the deviation of mean values may be the presence of impurity particles or the effect of electrode shape. As for the deviation around the mean value, the dispersion is large, and its standard deviation may amount to 10 to 20% of the man value. The dispersion is not due to the statistical time lag, but is due to parameters that vary with breakdown. (Wakatsuki, Y.)

  5. Novel Voltage limiting concept for avalance breakdown protection

    NARCIS (Netherlands)

    Ruijs, L.C.H.; Bezooijen, van A.; Mahmoudi, R.; Roermund, van A.H.M.

    2006-01-01

    Destructive over-voltage breakdown of cellular phone power transistors is prevented by using a new voltage-limiting concept. The output voltage is detected by an avalanche-based detector, and limited by decreasing the output power when needed. The voltage detector contains a low voltage bipolar NPN

  6. Determining the mode of high voltage breakdowns in vacuum devices

    International Nuclear Information System (INIS)

    Miller, H.C.; Furno, E.J.; Sturtz, J.P.

    1980-01-01

    Devices were constructed which were essentially vacuum diodes equipped with windows allowing observation of high voltage breakdowns. The waveform of the applied voltage was photographed, and the x-ray output was monitored to investigate electrical breakdown in these vacuum diodes. Results indicate that breakdowns may be divided into two types: (1) vacuum (interelectrode) breakdown - characterized by a diffuse moderately bright discharge, a relative slow and smooth voltage collapse, and a large burst of x-rays, and (2) surface (insulator) flashover - characterized by a bright discharge with a very bright filamentary core, a relatively fast and noisy voltage collapse and no x-ray burst. Useful information concerning the type of breakdown in a vacuum device can be obtained by monitoring the voltage (current) waveform and the x-ray output

  7. The Electrical Breakdown of Thin Dielectric Elastomers

    DEFF Research Database (Denmark)

    Zakaria, Shamsul Bin; Morshuis, Peter H. F.; Yahia, Benslimane Mohamed

    2014-01-01

    Dielectric elastomers are being developed for use in actuators, sensors and generators to be used in various applications, such as artificial eye lids, pressure sensors and human motion energy generators. In order to obtain maximum efficiency, the devices are operated at high electrical fields....... This increases the likelihood for electrical breakdown significantly. Hence, for many applications the performance of the dielectric elastomers is limited by this risk of failure, which is triggered by several factors. Amongst others thermal effects may strongly influence the electrical breakdown strength....... In this study, we model the electrothermal breakdown in thin PDMS based dielectric elastomers in order to evaluate the thermal mechanisms behind the electrical failures. The objective is to predict the operation range of PDMS based dielectric elastomers with respect to the temperature at given electric field...

  8. New method for determining avalanche breakdown voltage of silicon photomultipliers

    International Nuclear Information System (INIS)

    Chirikov-Zorin, I.

    2017-01-01

    The avalanche breakdown and Geiger mode of the silicon p-n junction is considered. A precise physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDE rel ) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDE rel value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts. [ru

  9. Prediction of breakdown voltages in novel gases for high voltage insulation

    Energy Technology Data Exchange (ETDEWEB)

    Koch, M.

    2015-07-01

    This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF{sub 6}) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF{sub 6} is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF{sub 6} in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF{sub 6} based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media.

  10. Prediction of breakdown voltages in novel gases for high voltage insulation

    International Nuclear Information System (INIS)

    Koch, M.

    2015-01-01

    This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF_6) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF_6 is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF_6 in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF_6 based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media

  11. The Significance of Breakdown Voltages for Quality Assurance of Low-Voltage BME Ceramic Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2014-01-01

    Application of thin dielectric, base metal electrode (BME) ceramic capacitors for high-reliability applications requires development of testing procedures that can assure high quality and reliability of the parts. In this work, distributions of breakdown voltages (VBR) in variety of low-voltage BME multilayer ceramic capacitors (MLCCs) have been measured and analyzed. It has been shown that analysis of the distributions can indicate the proportion of defective parts in the lot and significance of the defects. Variations of the distributions after solder dip testing allow for an assessment of the robustness of capacitors to soldering-related stresses. The drawbacks of the existing screening and qualification methods to reveal defects in high-value, low-voltage MLCCs and the importance of VBR measurements are discussed. Analysis has shown that due to a larger concentration of oxygen vacancies, defect-related degradation of the insulation resistance (IR) and failures are more likely in BME compared to the precious metal electrode (PME) capacitors.

  12. High-voltage atmospheric breakdown across intervening rutile dielectrics.

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, Kenneth Martin; Simpson, Sean; Coats, Rebecca Sue; Jorgenson, Roy Eberhardt; Hjalmarson, Harold Paul; Pasik, Michael Francis

    2013-09-01

    This report documents work conducted in FY13 on electrical discharge experiments performed to develop predictive computational models of the fundamental processes of surface breakdown in the vicinity of high-permittivity material interfaces. Further, experiments were conducted to determine if free carrier electrons could be excited into the conduction band thus lowering the effective breakdown voltage when UV photons (4.66 eV) from a high energy pulsed laser were incident on the rutile sample. This report documents the numerical approach, the experimental setup, and summarizes the data and simulations. Lastly, it describes the path forward and challenges that must be overcome in order to improve future experiments for characterizing the breakdown behavior for rutile.

  13. Effects of load voltage on voltage breakdown modes of electrical exploding aluminum wires in air

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Jian; Li, Xingwen, E-mail: xwli@mail.xjtu.edu.cn; Yang, Zefeng; Wang, Kun; Chao, Youchuang; Shi, Zongqian; Jia, Shenli; Qiu, Aici [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China)

    2015-06-15

    The effects of the load voltage on the breakdown modes are investigated in exploding aluminum wires driven by a 1 kA, 0.1 kA/ns pulsed current in air. From laser probing images taken by laser shadowgraphy, schlieren imaging, and interferometry, the position of the shockwave front, the plasma channel, and the wire core edge of the exploding product can be determined. The breakdown mode makes a transition from the internal mode, which involves breakdown inside the wire core, to the shunting mode, which involves breakdown in the compressed air, with decreasing charging voltage. The breakdown electrical field for a gaseous aluminum wire core of nearly solid density is estimated to be more than 20 kV/cm, while the value for gaseous aluminum of approximately 0.2% solid density decreases to 15–20 kV/cm. The breakdown field in shunting mode is less than 20 kV/cm and is strongly affected by the vaporized aluminum, the desorbed gas, and the electrons emitted from the wire core during the current pause. Ohmic heating during voltage collapses will induce further energy deposition in the current channel and thus will result in different expansion speeds for both the wire core and the shockwave front in the different modes.

  14. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Xin, Qian; Yan, Linlong; Luo, Yi [School of Physics, Shandong University, Jinan 250100 (China); Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Physics, Shandong University, Jinan 250100 (China); School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2015-03-16

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  15. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    International Nuclear Information System (INIS)

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-01-01

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate

  16. Dielectric oil-based polymer actuator for improved thickness strain and breakdown voltage

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Min Sung; Yamamoto, Akio [Dept. of Precision Engineering, School of Engineering, The University of Tokyo, Tokyo (Japan)

    2016-09-15

    Dielectric elastomer actuators (DEAs) have been increasingly investigated as alternative actuators to conventional ones. However, DEAs suffer from high rates of premature failure. Therefore, this study proposes a dielectric oil-based polymer actuator, also called a Dielectric liquid actuator (DLA), to compensate for the drawbacks of DEAs. DLA was experimentally compared with conventional DEAs. Results showed that DLA successfully prevented thermal runaway at defects in the electrode and excessive thinning of the film, resulting in increased breakdown voltage. Consequently, premature failure was inhibited, and the performance was improved. The breakdown voltages of DLA and DEA were 6000 and 2000 V, respectively, and their maximum thickness strains were 49.5% and 37.5%, respectively.

  17. Dielectric oil-based polymer actuator for improved thickness strain and breakdown voltage

    International Nuclear Information System (INIS)

    Cho, Min Sung; Yamamoto, Akio

    2016-01-01

    Dielectric elastomer actuators (DEAs) have been increasingly investigated as alternative actuators to conventional ones. However, DEAs suffer from high rates of premature failure. Therefore, this study proposes a dielectric oil-based polymer actuator, also called a Dielectric liquid actuator (DLA), to compensate for the drawbacks of DEAs. DLA was experimentally compared with conventional DEAs. Results showed that DLA successfully prevented thermal runaway at defects in the electrode and excessive thinning of the film, resulting in increased breakdown voltage. Consequently, premature failure was inhibited, and the performance was improved. The breakdown voltages of DLA and DEA were 6000 and 2000 V, respectively, and their maximum thickness strains were 49.5% and 37.5%, respectively

  18. Determining the mode of high voltage breakdowns in vacuum devices

    International Nuclear Information System (INIS)

    Miller, H.C.; Furno, E.J.; Sturtz, J.P.

    1980-01-01

    High voltage breakdowns (HVBs) occur in many vacuum devices. It frequently is of great practical interest to know the type (or mode) of such HVB's, since this can indicate weak points in the device. Post-mortems can sometimes be helpful, but it would be quite desirable to have a technique which would allow the HVB mode to be determined in an operating device. Photography can be quite helpful, but unfortunately many devices do not permit optical access to the region of interest. However, the idea of using photography in conjunction with other diagnostic techniques to establish the validity of these techniques seemed promising, since these techniques could then be used to determine the mode of HVBs in opaque devices. A literature search indicates that promising techniques are to measure the voltage applied to the device (or the current through the device) and also to look for x-rays generated by the device during an HVB

  19. Influence of water trees on breakdown voltage of polymeric cables insulations

    Energy Technology Data Exchange (ETDEWEB)

    Stancu, Cristina [INCDIE ICPE CA, Bucharest (Romania); Notingher, Petru V.; Plopeanu, Mihai Gabriel [Politehnica University of Bucharest, Bucharest (Romania)

    2011-07-01

    In a previous paper was shown that water trees development modifies considerably the electric field repartition, which increases significantly in the vicinity of treed areas. In order to find the water trees influence on the breakdown voltage, in the present paper, an experimental study on model cables insulated with low density polyethylene is done. In insulation samples, water trees with various dimensions and densities were developed. For the reduction of the test duration, an electric field with a higher frequency (3-5 kHz) was used. For breakdown voltage measurement an automatic setup was realized. For each value of the ageing time the dimensions and densities of water trees and breakdown voltage were measured and the dependency of the breakdown voltage with these quantities were analysed. The results show a significant reduction of the breakdown voltage of treed cables insulations compared to un-treed ones. Key words: polyethylene, water treeing, electric field, breakdown, power cables.

  20. Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure

    International Nuclear Information System (INIS)

    Li Qi; Wang Weidong; Zhao Qiuming; Wei Xueming

    2012-01-01

    A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology (SB) is reported. The P-type epitaxial layer is embedded between an N-type drift region and an N-type substrate to block the conduction path in the off-state and change the distributions of the bulk electric field. The substrate bias strengthens the charge share effect of the drift region near the source, and the vertical electric field peak under the drain is decreased, which is especially helpful in improving the vertical breakdown voltage in a lateral power device with a thin drift region. The numerical results by MEDICI indicate that the breakdown voltage of the proposed device is increased by 97% compared with a conventional LDMOS, while maintaining a lowon-resistance. (semiconductor devices)

  1. Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

    Directory of Open Access Journals (Sweden)

    Xiao-Yu Tang

    2015-01-01

    Full Text Available With the rapid development of the power integrated circuit technology, polysilicon resistors have been widely used not only in traditional CMOS circuits, but also in the high voltage applications. However, there have been few detailed reports about the polysilicon resistors’ characteristics, like voltage and temperature coefficients and breakdown behaviors which are critical parameters of high voltage applications. In this study, we experimentally find that the resistance of the polysilicon resistor with a relatively low doping concentration shows negative voltage and temperature coefficients, while that of the polysilicon resistor with a high doping concentration has positive voltage and temperature coefficients. Moreover, from the experimental results of breakdown voltages of the polysilicon resistors, it could be deduced that the breakdown of polysilicon resistors is thermally rather than electrically induced. We also proposed to add an N-type well underneath the oxide to increase the breakdown voltage in the vertical direction when the substrate is P-type doped.

  2. The effect of external visible light on the breakdown voltage of a long discharge tube

    Science.gov (United States)

    Shishpanov, A. I.; Ionikh, Yu. Z.; Meshchanov, A. V.

    2016-06-01

    The breakdown characteristics of a discharge tube with a configuration typical of gas-discharge light sources and electric-discharge lasers (a so-called "long discharge tube") filled with argon or helium at a pressure of 1 Torr have been investigated. A breakdown has been implemented using positive and negative voltage pulses with a linear leading edge having a slope dU/ dt ~ 10-107 V/s. Visible light from an external source (halogen incandescent lamp) is found to affect the breakdown characteristics. The dependences of the dynamic breakdown voltage of the tube on dU/ dt and on the incident light intensity are measured. The breakdown voltage is found to decrease under irradiation of the high-voltage anode of the tube in a wide range of dU/ dt. A dependence of the effect magnitude on the light intensity and spectrum is obtained. Possible physical mechanisms of this phenomenon are discussed.

  3. Effect of neutron irradiation on the breakdown voltage of power MOSFET's

    International Nuclear Information System (INIS)

    Hasan, S.M.Y.; Kosier, S.L.; Schrimpf, R.D.; Galloway, K.F.

    1994-01-01

    The effect of neutron irradiation on power metal-oxide-semiconductor field effect transistor (power MOSFET) breakdown voltage has been investigated. Transistors with various breakdown voltage ratings were irradiated in a TRIGA nuclear reactor with cumulative fluence levels up to 5 x 10 14 neutrons/cm 2 (1 MeV equivalent). Noticeable increases in the breakdown voltages are observed in n-type MOSFET's after 10 13 neutrons/cm 2 and in p-type MOSFETs after 10 12 neutrons/cm 2 . An increase in breakdown voltage of as much as 30% is observed after 5 x 10 14 neutrons/cm 2 . The increase in breakdown voltage is attributed to the neutron-irradiation-induced defects which decrease the mean free path and trap majority carriers in the space charge region. The effect of positive trapped oxide charge due to concomitant gamma radiation and the effect of the termination structure on the increase in breakdown voltage are considered. An empirical model is presented to predict the value of the breakdown voltage as a function of neutron fluence

  4. Breakdown dynamics of electrically exploding thin metal wires in vacuum

    Science.gov (United States)

    Sarkisov, G. S.; Caplinger, J.; Parada, F.; Sotnikov, V. I.

    2016-10-01

    Using a two-frame intensified charge coupled device (iCCD) imaging system with a 2 ns exposure time, we observed the dynamics of voltage breakdown and corona generation in experiments of fast ns-time exploding fine Ni and stainless-steel (SS) wires in a vacuum. These experiments show that corona generation along the wire surface is subjected to temporal-spatial inhomogeneity. For both metal wires, we observed an initial generation of a bright cathode spot before the ionization of the entire wire length. This cathode spot does not expand with time. For 25.4 μm diameter Ni and SS wire explosions with positive polarity, breakdown starts from the ground anode and propagates to the high voltage cathode with speeds approaching 3500 km/s or approximately one percent of light speed.

  5. Lowering effect of radioactive irradiation on breakdown voltage and electron avalanche pulse characteristics

    International Nuclear Information System (INIS)

    Kawahashi, Akira; Nakano, Toru; Hosokawa, Tatsuzo; Miyoshi, Yosinori.

    1976-01-01

    In the time resolving measurement of the growing process and breakdown of electron avalanche in a gap of uniform electric field, the phenomenon that DC breakdown voltage slightly lowered was observed when β ray was irradiated as the initial electron source, as compared with unirradiated condition. Beta source used is 90 Sr- 90 Y of 2 mCi in radiative equilibrium. The experimental results and the examination are described in detail. In brief, the remarkable superposition of succeeding avalanche pulse over the preceeding avalanche pulse waveform was observed under the gap condition in which the breakdown voltage decreased in β-ray irradiation. Thus this superposition of avalanche pulses is considered as one of the causes of the breakdown voltage reduction. When β source is used as the initial electron source, the number of supplied initial electrons is very large as compared with unity, and at the same time, a great number of initial electrons can be supplied within the diffusion radius r of avalanche. Then the effect of initial electron number n 0 was considered by employing a diagram for breakdown scheme. The transition from Townsend type breakdown to streamer type breakdown occurs owing to increasing n 0 , and in that condition, the breakdown voltage lowers slightly. (Wakatsuki, Y)

  6. Ionizing potential waves and high-voltage breakdown streamers.

    Science.gov (United States)

    Albright, N. W.; Tidman, D. A.

    1972-01-01

    The structure of ionizing potential waves driven by a strong electric field in a dense gas is discussed. Negative breakdown waves are found to propagate with a velocity proportional to the electric field normal to the wavefront. This causes a curved ionizing potential wavefront to focus down into a filamentary structure, and may provide the reason why breakdown in dense gases propagates in the form of a narrow leader streamer instead of a broad wavefront.

  7. Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my [Centre of Innovative Nanostructures and Nanodevices, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750 Tronoh, Perak (Malaysia)

    2014-03-24

    Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

  8. Effect of High Solenoidal Magnetic Fields on Breakdown Voltages of High Vacuum 805 MHz Cavities

    CERN Document Server

    Moretti, A; Geer, S; Qian, Z

    2004-01-01

    The demonstration of muon ionization cooling by a large factor is necessary to demonstrate the feasilibility of a collider or neutrino factory. An important cooling experiment, MICE [1], has been proposed to demonstrate 10 % cooling which will validate the technology. Ionization cooling is accomplished by passing a high-emittance beam in a multi-Tesla solenoidal channel alternately through regions of low Z material and very high accelerating RF Cavities. To determine the effect of very large solenoidal magnetic fields on the generations of Dark current, X-Rays and breakdown Voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station, and a large bore 5 T solenoidal superconducting magnet containing a pill box type Cavity with thin removable window apertures allowing dark current studies and breakdown studies of different materials. The results of this study will be presented. The study has shown that the peak achievab...

  9. Effect of high solenoidal magnetic fields on breakdown voltages of high vacuum 805 MHz cavities

    International Nuclear Information System (INIS)

    Moretti, A.; Bross, A.; Geer, S.; Qian, Z.; Norem, J.; Li, D.; Zisman, M.; Torun, Y.; Rimmer, R.; Errede, D.

    2005-01-01

    There is an on going international collaboration studying the feasibility and cost of building a muon collider or neutrino factory [1,2]. An important aspect of this study is the full understanding of ionization cooling of muons by many orders of magnitude for the collider case. An important muon ionization cooling experiment, MICE [3], has been proposed to demonstrate and validate the technology that could be used for cooling. Ionization cooling is accomplished by passing a high-emittance muon beam alternately through regions of low Z material, such as liquid hydrogen, and very high accelerating RF Cavities within a multi-Tesla solenoidal field. To determine the effect of very large solenoidal magnetic fields on the generation of dark current, x-rays and on the breakdown voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station and a large warm bore 5 T solenoidal superconducting magnet containing a pill box type cavity with thin removable window apertures. This system allows dark current and breakdown studies of different window configurations and materials. The results of this study will be presented. The study has shown that the peak achievable accelerating gradient is reduced by a factor greater than 2 when solenoidal field of greater than 2 T are applied to the cavity

  10. Experimental research for vacuum gap breakdown in high voltage multi-pulse

    International Nuclear Information System (INIS)

    Huang Ziping; He Jialong; Chen Sifu; Deng Jianjun; Wang Liping

    2008-01-01

    Base on the breakdown theory of vacuum gaps, experiments have been done to find out the breakdown electric field intensities in high voltage single-and triple-pulse for 26 vacuum gaps with different shapes. The experimental results match up to the theory and confirm the effect of the pulse-number increase on the breakdown electric field intensity. The key point to decide the macroscopical breakdown electric field intensity of a vacuum gap has been pointed out with some advises about the design of a multi-pulse linear inductive accelerator's accelerate gap. (authors)

  11. Calculations following voltage breakdown in a single-ended Van de Graaff with an accelerator tube

    International Nuclear Information System (INIS)

    Staniforth, J.A.

    1979-01-01

    Calculation of voltages and voltage gradients in the terminal, along the insulating column and the accelerating tube are described for various breakdown positions. The method uses a number of inverted-L network sections to represent the machine assuming that the tube is coupled to the column. Various forms of coupling are examined. The calculations use an iterative computer program which calculates the voltages and currents in the networks at successive small time intervals. (author)

  12. Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages

    CERN Document Server

    Kum, B H; Shin, M W; Park, J D

    1999-01-01

    This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si sub x B sub y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm sup 2 at a forward voltage of 2 V. The breakdown of the Pt. 4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

  13. The humidity effect on the breakdown voltage characteristics and the transport parameters of air

    International Nuclear Information System (INIS)

    Radmilović-Radjenović, M.; Radjenović, B.; Nikitović, Ž.; Matejčik, Š.; Klas, M.

    2012-01-01

    This paper contains experimental results for the direct current (DC) breakdown voltages and calculated transport parameters for dry, synthetic and ambient air. The breakdown voltage curves for dry, ambient and synthetic air at the gap size of 100μm are very similar. The differences between them are much more pronounced at the interelectrode separation of 20μm, especially at the right hand branch of the breakdown voltage curves. On the other hand, the effective yields γ for dry and synthetic air are in disagreement at lower values of the E/p. Results of calculations based on the Two Term Approximation indicate that the humidity has no a great influence on the transport parameters at all range of the reduce field E/N.

  14. Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

    International Nuclear Information System (INIS)

    Betta, G.-F. Dalla; Mendicino, R.; Povoli, M.; Sultan, D.M.S.; Ayllon, N.; Hoeferkamp, M.; McDuff, H.; Seidel, S.; Boscardin, M.; Zorzi, N.; Mattiazzo, S.

    2016-01-01

    We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

  15. Breakdown Characteristic Analysis of Paper- Oil Insulation under AC and DC Voltage

    Science.gov (United States)

    Anuar, N. F.; Jamail, N. A. M.; Rahman, R. A.; Kamarudin, M. S.

    2017-08-01

    This paper presents the study of breakdown characteristic of Kraft paper insulated with two different types of insulating fluid, which are Palm oil and Coconut oil. Palm oil and Coconut oil are chosen as the alternative fluid to the transformer oil because it has high potential and environmentally-friendly. The Segezha Kraft papers with various thicknesses (65.5 gsm, 75 gsm, 85gsm, 90 gsm) have been used in this research. High Voltage Direct Current (HVDC), High Voltage Alternating Current (HVAC) and carbon track and severity analysis is conducted to observe the sample of aging Kraft paper. These samples have been immersed using Palm oil and Coconut oil up to 90 days to observe the absorption rate. All samples started to reach saturation level at 70 days of immersion. HVDC and HVAC breakdown experiments have been done after the samples had reached the saturation level based on normal condition, immersed in Palm oil and immersed in Coconut oil. All samples immersed in liquid show different breakdown voltage reading compared to normal condition. The analysis of carbon track and severity on surface has been done using Analytical Scanning Electron Microscope (SEM) Analysis. The results of the experiment show that the sample of Kraft paper immersed in Palm oil was better than Coconut oil immersed sample. Therefore the sample condition was the main factor that determines the value of breakdown voltage test. Introduction

  16. Energetic high-voltage breakdowns in vacuum over a large gap for ITER neutral beam accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Villecroze, F., E-mail: Frederic.villecroze@cea.fr [CEA, IRFM, F-13108 Saint-Paul-Lez-Durance (France); Christin, L.; Esch, H.P.L. de; Simonin, A. [CEA, IRFM, F-13108 Saint-Paul-Lez-Durance (France); Schunke, B.; Svensson, L.; Hemsworth, R.; Boilson, D. [ITER Organization, Route de Vinon sur Verdon, 13115 Saint Paul Lez Durance (France)

    2013-10-15

    Highlights: ► We performed energetic high voltage breakdowns up to 370 kV with a stored energy of 1 kJ. ► No breakdowns at 200 kV could be produced over a gap of 85 mm using 100 cm{sup 2} copper electrodes. ► Electrodes damage was visible after the experiment. ► The number of arcs impacts is orders of magnitude above the number of breakdowns. -- Abstract: CEA has undertaken tests to study the resilience of copper electrodes in vacuum against energetic high-voltage breakdowns using external capacitors to provide the energy. Earlier tests succeeded in dissipating a maximum of 150 J in a 30 mm gap, limited by the equivalent series resistance (ESR) in the external capacitors. Using new ones with an ESR that is a factor of 10 lower it was unsuccessfully tried to produce breakdowns at 200 kV over the 85 mm gap, despite the use of a UV flash lamp and a “field enhancement ring” (FER) that locally increased the electric field on the cathode by 50%. Consequently, the breakdowns had to be produced by raising the voltage to 300–350 kV while maintaining the gap at 85 mm. During these tests, single breakdowns dissipated up to 1140 J in the 85 mm vacuum gap. Inspection of the electrodes revealed that substantial amounts of copper appear have been evaporated from the anode and deposited on to the cathode. Also electrode deconditioning occurred.

  17. Breakdown voltage mapping through voltage dependent ReBEL intensity imaging of multi-crystalline Si solar cells

    Science.gov (United States)

    Dix-Peek, RM.; van Dyk, EE.; Vorster, FJ.; Pretorius, CJ.

    2018-04-01

    Device material quality affects both the efficiency and the longevity of photovoltaic (PV) cells. Therefore, identifying these defects can be beneficial in the development of more efficient and longer lasting PV cells. In this study, a combination of spatially-resolved, electroluminescence (EL), and light beam induced current (LBIC) measurements, were used to identify specific defects and features of a multi-crystalline Si PV cells. In this study, a novel approach is used to map the breakdown voltage of a PV cell through voltage dependent Reverse Bias EL (ReBEL) intensity imaging.

  18. Subnanosecond breakdown development in high-voltage pulse discharge: Effect of secondary electron emission

    Science.gov (United States)

    Alexandrov, A. L.; Schweigert, I. V.; Zakrevskiy, Dm. E.; Bokhan, P. A.; Gugin, P.; Lavrukhin, M.

    2017-10-01

    A subnanosecond breakdown in high-voltage pulse discharge may be a key tool for superfast commutation of high power devices. The breakdown in high-voltage open discharge at mid-high pressure in helium was studied in experiment and in kinetic simulations. The kinetic model of electron avalanche development was constructed, based on PIC-MCC simulations, including dynamics of electrons, ions and fast helium atoms, produced by ions scattering. Special attention was paid to electron emission processes from cathode, such as: photoemission by Doppler-shifted resonant photons, produced in excitation processes involving fast atoms; electron emission by ions and fast atoms bombardment of cathode; the secondary electron emission (SEE) by hot electrons from bulk plasma. The simulations show that the fast atoms accumulation is the main reason of emission growth at the early stage of breakdown, but at the final stage, when the voltage on plasma gap diminishes, namely the SEE is responsible for subnanosecond rate of current growth. It was shown that the characteristic time of the current growth can be controlled by the SEE yield. The influence of SEE yield for three types of cathode material (titanium, SiC, and CuAlMg-alloy) was tested. By changing the pulse voltage amplitude and gas pressure, the area of existence of subnanosecond breakdown is identified. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time value as small as τs = 0.4 ns, for the pulse voltage amplitude of 5÷12 kV. An increase of gas pressure from 15 Torr to 30 Torr essentially decreases the time of of current front growth, whereas the pulse voltage variation weakly affects the results.

  19. Effect of secondary electron emission on subnanosecond breakdown in high-voltage pulse discharge

    Science.gov (United States)

    Schweigert, I. V.; Alexandrov, A. L.; Gugin, P.; Lavrukhin, M.; Bokhan, P. A.; Zakrevsky, Dm E.

    2017-11-01

    The subnanosecond breakdown in open discharge may be applied for producing superfast high power switches. Such fast breakdown in high-voltage pulse discharge in helium was explored both in experiment and in kinetic simulations. The kinetic model of electron avalanche development was developed using PIC-MCC technique. The model simulates motion of electrons, ions and fast helium atoms, appearing due to ions scattering. It was shown that the mechanism responsible for ultra-fast breakdown development is the electron emission from cathode. The photoemission and emission by ions or fast atoms impact is the main reason of current growth at the early stage of breakdown, but at the final stage, when the voltage on discharge gap drops, the secondary electron emission (SEE) is responsible for subnanosecond time scale of current growth. It was also found that the characteristic time of the current growth τS depends on the SEE yield of the cathode material. Three types of cathode material (titanium, SiC, and CuAlMg-alloy) were tested. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time as small as τS = 0.4 ns, for the pulse voltage amplitude of 5- 12 kV..

  20. Mason’s equation application for prediction of voltage of oil shale treeing breakdown

    Science.gov (United States)

    Martemyanov, S. M.

    2017-05-01

    The application of the formula, which is used to calculate the maximum field at the tip of the pin-plane electrode system was proposed to describe the process of electrical treeing and treeing breakdown in an oil shale. An analytical expression for the calculation of the treeing breakdown voltage in the oil shale, as a function of the inter-electrode distance, was taken. A high accuracy of the correspondence of the model to the experimental data in the range of inter-electrode distances from 0.03 to 0.5 m was taken.

  1. Space Charge Modulated Electrical Breakdown of Oil Impregnated Paper Insulation Subjected to AC-DC Combined Voltages

    Directory of Open Access Journals (Sweden)

    Yuanwei Zhu

    2018-06-01

    Full Text Available Based on the existing acknowledgment that space charge modulates AC and DC breakdown of insulating materials, this investigation promotes the related investigation into the situations of more complex electrical stress, i.e., AC-DC combined voltages. Experimentally, the AC-DC breakdown characteristics of oil impregnated paper insulation were systematically investigated. The effects of pre-applied voltage waveform, AC component ratio, and sample thickness on AC-DC breakdown characteristics were analyzed. After that, based on an improved bipolar charge transport model, the space charge profiles and the space charge induced electric field distortion during AC-DC breakdown were numerically simulated to explain the differences in breakdown characteristics between the pre-applied AC and pre-applied DC methods under AC-DC combined voltages. It is concluded that large amounts of homo-charges are accumulated during AC-DC breakdown, which results in significantly distorted inner electric field, leading to variations of breakdown characteristics of oil impregnated paper insulation. Therefore, space charges under AC-DC combined voltages must be considered in the design of converter transformers. In addition, this investigation could provide supporting breakdown data for insulation design of converter transformers and could promote better understanding on the breakdown mechanism of insulating materials subjected to AC-DC combined voltages.

  2. Hopf bifurcation and chaos from torus breakdown in voltage-mode controlled DC drive systems

    International Nuclear Information System (INIS)

    Dai Dong; Ma Xikui; Zhang Bo; Tse, Chi K.

    2009-01-01

    Period-doubling bifurcation and its route to chaos have been thoroughly investigated in voltage-mode and current-mode controlled DC motor drives under simple proportional control. In this paper, the phenomena of Hopf bifurcation and chaos from torus breakdown in a voltage-mode controlled DC drive system is reported. It has been shown that Hopf bifurcation may occur when the DC drive system adopts a more practical proportional-integral control. The phenomena of period-adding and phase-locking are also observed after the Hopf bifurcation. Furthermore, it is shown that the stable torus can breakdown and chaos emerges afterwards. The work presented in this paper provides more complete information about the dynamical behaviors of DC drive systems.

  3. Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

    Directory of Open Access Journals (Sweden)

    Sangeeta Singh

    2016-03-01

    Full Text Available In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS to lower the breakdown voltage of conventional impact ionization MOS (IMOS and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization and source induced barrier tunneling. The silicide source offers very low parasitic resistance, the outcome of which is an increment in voltage drop across the intrinsic region for the same applied bias. This reduces operating voltage and hence, it exhibits a significant reduction in both breakdown and threshold voltage. STS-IMOS shows high immunity against hot electron damage. As a result of this the device reliability increases magnificently. The analytical model for impact ionization current (Iii is developed based on the integration of ionization integral (M. Similarly, to get Schottky tunneling current (ITun expression, Wentzel–Kramers–Brillouin (WKB approximation is employed. Analytical models for threshold voltage and subthreshold slope is optimized against Schottky barrier height (ϕB variation. The expression for the drain current is computed as a function of gate-to-drain bias via integral expression. It is validated by comparing it with the technology computer-aided design (TCAD simulation results as well. In essence, this analytical framework provides the physical background for better understanding of STS-IMOS and its performance estimation.

  4. Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2011-01-01

    The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of

  5. High voltage capacitor design and the determination of solid dielectric voltage breakdown

    International Nuclear Information System (INIS)

    Hutapea, S.

    1976-01-01

    The value of the external field intensity serves as an electrical insulating material and is a physical characteristic of the substance. Capacitor discharge in the dielectric medium are experimentally investigated. The high voltage power supply and other instrument needed are briefly discussed. Capacitors with working voltage of 30.000 volt and the plastic being used for dielectrics in the capacitors are also discussed. (author)

  6. Comparative Study of Breakdown Voltage of Mineral, Synthetic and Natural Oils and Based Mineral Oil Mixtures under AC and DC Voltages

    Directory of Open Access Journals (Sweden)

    Abderrahmane Beroual

    2017-04-01

    Full Text Available This paper deals with a comparative study of AC and DC breakdown voltages of based mineral oil mixtures with natural and synthetic esters mainly used in high voltage power transformers. The goal was to analyze the performances of oil mixtures from the dielectric withstand point of view and to predict the behavior of transformers originally filled with mineral oil and re-filled with synthetic or natural ester oils when emptied for maintenance. The study concerns mixtures based on 20%, 50%, and 80% of natural and synthetic ester oils. AC breakdown voltages were measured using a sphere-sphere electrode system according to IEC 60156 specifications; the same specification was adopted for DC measurements since there is no standard specifications for this voltage waveform. A statistical analysis of the mean values, standard deviations, and histograms of breakdown voltage data was carried out. The Normal and Weibull distribution functions were used to analyze the experimental data and the best function that the data followed was used to estimate the breakdown voltage with risk of 1%, 10%, and 50% probability. It was shown that whatever the applied voltage waveforms, ester oils always have a significantly higher breakdown voltage than mineral oil. The addition of only 20% of natural or synthetic ester oil was sufficient to considerably increase the breakdown voltage of mineral oil. The dielectric strength of such a mixture is much higher than that of mineral oil alone and can reach that of ester oils. From the point of view of dielectric strength, the mixtures constitute an option for improving the performance of mineral oil. Thus, re-filling of transformers containing up to 20% mineral oil residues with ester oils, does not present any problem; it is even advantageous when considering only the breakdown voltage. Under AC, the mixtures with natural ester always follow the behavior of vegetable oil alone. With the exception of the 20% mixture of natural

  7. The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

    Science.gov (United States)

    Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias

    2018-02-01

    A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.

  8. Energy dissipation on ion-accelerator grids during high-voltage breakdown

    International Nuclear Information System (INIS)

    Menon, M.M.; Ponte, N.S.

    1981-01-01

    The effects of stored energy in the system capacitance across the accelerator grids during high voltage vacuum breakdown are examined. Measurements were made of the current flow and the energy deposition on the grids during breakdown. It is shown that only a portion (less than or equal to 40 J) of the total stored energy (congruent to 100 J) is actually dissipated on the grids. Most of the energy is released during the formation phase of the vacuum arc and is deposited primarily on the most positive grid. Certain abnormal situations led to energy depositions of about 200 J on the grid, but the ion accelerator endured them without exhibiting any deterioration in performance

  9. A new SOI high-voltage device with a step-thickness drift region and its analytical model for the electric field and breakdown voltage

    International Nuclear Information System (INIS)

    Luo Xiaorong; Zhang Wei; Zhang Bo; Li Zhaoji; Yang Shouguo; Zhan Zhan; Fu Daping

    2008-01-01

    A new SOI high-voltage device with a step-thickness drift region (ST SOI) and its analytical model for the two-dimension electric field distribution and the breakdown voltage are proposed. The electric field in the drift region is modulated and that of the buried layer is enhanced by the variable thickness SOI layer, thereby resulting in the enhancement of the breakdown voltage. Based on the Poisson equation, the expression for the two-dimension electric field distribution is presented taking the modulation effect into account, from which the RESURF (REduced SURface Field) condition and the approximate but explicit expression for the maximal breakdown voltage are derived. The analytical model can explain the effects of the device parameters, such as the step height and the step length of the SOI layer, the doping concentration and the buried oxide thickness, on the electric field distribution and the breakdown voltage. The validity of this model is demonstrated by a comparison with numerical simulations. Improvement on both the breakdown voltage and the on-resistance (R on ) for the ST SOI is obtained due to the variable thickness SOI layer

  10. Investigation of High Voltage Breakdown and Arc Localization in RF Structures

    International Nuclear Information System (INIS)

    Bigelow, T.S.; Goulding, R.H.; Swain, D.W.

    1999-01-01

    An effort is underway to improve the voltage standoff capabilities of ion cyclotron range of frequencies (ICRF) heating and current drive systems. One approach is to develop techniques for determining the location of an electrical breakdown (arc) when it occurs. A technique is described which uses a measurement of the reflection coefficient of a swept frequency signal to determine the arc location. The technique has several advantages including a requirement for only a small number of sensors and very simple data interpretation. In addition a test stand is described which will be used for studies of rf arc behavior. The device uses a quarter-wave resonator to produce voltages to 90 kV in the frequency range of 55-80 MHz

  11. A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

    Science.gov (United States)

    Kim, Dong Young; Seok, Ogyun; Park, Himchan; Bahng, Wook; Kim, Hyoung Woo; Park, Ki Cheol

    2018-02-01

    We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low work-function material of poly-Si as an anode electrode. Also, reverse breakdown voltage was successfully improved from 901 to 1154 V due to a shrunk low-work-function Schottky region by a proposed self-align etching process between poly-Si and SiC. SiC TSBS with poly-Si/Ni dual Schottky scheme is a suitable structure for high-efficiency rectification and high-voltage blocking operation.

  12. Increasing break-down strength of the support colomn of high-voltage accelerators

    International Nuclear Information System (INIS)

    Rezvykh, K.A.; Romanov, V.A.

    1981-01-01

    Calculation results of strength of electric field of the EG-2.5 electrostatic accelerator for the support colomn with electrodes of circular and elliptical transverse cross sections are presented. Conducted is the choice of constructing the column under the condition that the dimensions of the tank, high-voltage electrode, step between the sections and internal diameter of the colomn electrodes are not changed. The potential at the high-voltage electrode equals 2.5 MV while the average longitudinal gradient of the colomn field equals 1.25 MV/m. The support insulation colomn of the high-voltage accelerator screened by rings with transverse cross section in the form of orientation oval in some accelerators promotes obtaining higher operating voltage and at the same time increase of operation reliability at the rest unchanged dimensions of the plant because the probability of break-down between the support colomn and the tank wall decreases. The latter is especially significant for most high-energy accelerators as well as for accelerators used in national economy [ru

  13. A consistent approach to estimate the breakdown voltage of high voltage electrodes under positive switching impulses

    Science.gov (United States)

    Arevalo, L.; Wu, D.; Jacobson, B.

    2013-08-01

    The main propose of this paper is to present a physical model of long air gap electrical discharges under positive switching impulses. The development and progression of discharges in long air gaps are attributable to two intertwined physical phenomena, namely, the leader channel and the streamer zone. Experimental studies have been used to develop empirical and physical models capable to represent the streamer zone and the leader channel. The empirical ones have led to improvements in the electrical design of high voltage apparatus and insulation distances, but they cannot take into account factors associated with fundamental physics and/or the behavior of materials. The physical models have been used to describe and understand the discharge phenomena of laboratory and lightning discharges. However, because of the complex simulations necessary to reproduce real cases, they are not in widespread use in the engineering of practical applications. Hence, the aim of the work presented here is to develop a model based on physics of the discharge capable to validate and complement the existing engineering models. The model presented here proposes a new geometrical approximation for the representation of the streamer and the calculation of the accumulated electrical charge. The model considers a variable streamer region that changes with the temporal and spatial variations of the electric field. The leader channel is modeled using the non local thermo-equilibrium equations. Furthermore, statistical delays before the inception of the first corona, and random distributions to represent the tortuous nature of the path taken by the leader channel were included based on the behavior observed in experimental tests, with the intention of ensuring the discharge behaved in a realistic manner. For comparison purposes, two different gap configurations were simulated. A reasonable agreement was found between the physical model and the experimental test results.

  14. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

    International Nuclear Information System (INIS)

    Luo Jun; Zhao Sheng-Lei; Mi Min-Han; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Chen Wei-Wei; Hou Bin

    2016-01-01

    The effects of gate length L G on breakdown voltage V BR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with L G = 1 μm∼ 20 μm. With the increase of L G , V BR is first increased, and then saturated at L G = 3 μm. For the HEMT with L G = 1 μm, breakdown voltage V BR is 117 V, and it can be enhanced to 148 V for the HEMT with L G = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with L G > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with L G = 3 μm∼20 μm, and their breakdown voltages are in a range of 140 V–156 V. (paper)

  15. The Studies of a Vacuum Gap Breakdown after High-Current Arc Interruption with Increasing the Voltage

    Science.gov (United States)

    Schneider, A. V.; Popov, S. A.; Batrakov, A. V.; Dubrovskaya, E. L.; Lavrinovich, V. A.

    2017-12-01

    Vacuum-gap breakdown has been studied after high-current arc interruption with a subsequent increase in the transient recovery voltage across a gap. The effects of factors, such as the rate of the rise in the transient voltage, the potential of the shield that surrounds a discharge gap, and the arc burning time, have been determined. It has been revealed that opening the contacts earlier leads to the formation of an anode spot, which is the source of electrode material vapors into the discharge gap after current zero moment. Under the conditions of increasing voltage, this fact results in the breakdown. Too late opening leads to the breakdown of a short gap due to the high electric fields.

  16. Cable Insulation Breakdowns in the Modulator with a Switch Mode High Voltage Power Supply

    CERN Document Server

    Cours, A

    2004-01-01

    The Advanced Photon Source modulators are PFN-type pulsers with 40 kV switch mode charging power supplies (PSs). The PS and the PFN are connected to each other by 18 feet of high-voltage (HV) cable. Another HV cable connects two separate parts of the PFN. The cables are standard 75 kV x-ray cables. All four cable connectors were designed by the PS manufacturer. Both cables were operating at the same voltage level (about 35 kV). The PS’s output connector has never failed during five years of operation. One of the other three connectors failed approximately five times more often than the others. In order to resolve the failure problem, a transient analysis was performed for all connectors. It was found that transient voltage in the connector that failed most often was subjected to more high-frequency, high-amplitude AC components than the other three connectors. It was thought that these components caused partial discharge in the connector insulation and led to the insulation breakdown. Modification o...

  17. A new protection system against high voltage vacuum breakdowns developed for the Tore Supra neutral beam injector prototype

    International Nuclear Information System (INIS)

    Fumelli, M.; Jequier, F.; Pamela, J.

    1988-01-01

    A passive protection system against high voltage vacuum breakdowns has been developed. This system is based on the principle of oscillatory discharges in an RLC circuit coupled with the use of a diode. It allows the interruption of a vacuum breakdown in a few milliseconds. This study has been made for protecting some parts of the neutral beam injectors of the Tore Supra Tokamak experiment, but its field of application should be quite large. The conception of the whole high voltage electrical circuit developed for the Tore Supra injector prototype experiments is also presented

  18. 5.0 kV breakdown-voltage vertical GaN p-n junction diodes

    Science.gov (United States)

    Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa; Yoshino, Michitaka; Nakamura, Tohru; Mishima, Tomoyoshi

    2018-04-01

    A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p-n junction diodes by using our newly developed guard-ring structures. A resistance device was inserted between the main diode portion and the guard-ring portion in a ring-shaped p-n diode to generate a voltage drop over the resistance device by leakage current flowing through the guard-ring portion under negatively biased conditions before breakdown. The voltage at the outer mesa edge of the guard-ring portion, where the electric field intensity is highest and the destructive breakdown usually occurs, is decreased by the voltage drop, so the electric field concentration in the portion is reduced. By adopting this structure, the breakdown voltage (V B) is raised by about 200 V. Combined with a low measured on-resistance (R on) of 1.25 mΩ cm2, Baliga’s figure of merit (V\\text{B}2/R\\text{on}) was as high as 20 GW/cm2.

  19. Improving breakdown voltage performance of SOI power device with folded drift region

    Science.gov (United States)

    Qi, Li; Hai-Ou, Li; Ping-Jiang, Huang; Gong-Li, Xiao; Nian-Jiong, Yang

    2016-07-01

    A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. Project supported by the Guangxi Natural Science Foundation of China (Grant Nos. 2013GXNSFAA019335 and 2015GXNSFAA139300), Guangxi Experiment Center of Information Science of China (Grant No. YB1406), Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing of China, Key Laboratory of Cognitive Radio and Information Processing (Grant No. GXKL061505), Guangxi Key Laboratory of Automobile Components and Vehicle Technology of China (Grant No. 2014KFMS04), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

  20. The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

    Directory of Open Access Journals (Sweden)

    Jingyu Shen

    2018-01-01

    Full Text Available The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

  1. An LOD with improved breakdown voltage in full-frame CCD devices

    Science.gov (United States)

    Banghart, Edmund K.; Stevens, Eric G.; Doan, Hung Q.; Shepherd, John P.; Meisenzahl, Eric J.

    2005-02-01

    In full-frame image sensors, lateral overflow drain (LOD) structures are typically formed along the vertical CCD shift registers to provide a means for preventing charge blooming in the imager pixels. In a conventional LOD structure, the n-type LOD implant is made through the thin gate dielectric stack in the device active area and adjacent to the thick field oxidation that isolates the vertical CCD columns of the imager. In this paper, a novel LOD structure is described in which the n-type LOD impurities are placed directly under the field oxidation and are, therefore, electrically isolated from the gate electrodes. By reducing the electrical fields that cause breakdown at the silicon surface, this new structure permits a larger amount of n-type impurities to be implanted for the purpose of increasing the LOD conductivity. As a consequence of the improved conductance, the LOD width can be significantly reduced, enabling the design of higher resolution imaging arrays without sacrificing charge capacity in the pixels. Numerical simulations with MEDICI of the LOD leakage current are presented that identify the breakdown mechanism, while three-dimensional solutions to Poisson's equation are used to determine the charge capacity as a function of pixel dimension.

  2. One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

    International Nuclear Information System (INIS)

    Zhang Jun; Guo Yu-Feng; Xu Yue; Lin Hong; Yang Hui; Hong Yang; Yao Jia-Fei

    2015-01-01

    A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device. (paper)

  3. Design of High Voltage Electrical Breakdown Strength measuring system at 1.8K with a G-M cryocooler

    Science.gov (United States)

    Li, Jian; Huang, Rongjin; Li, Xu; Xu, Dong; Liu, Huiming; Li, Laifeng

    2017-09-01

    Impregnating resins as electrical insulation materials for use in ITER magnets and feeder system are required to be radiation stable, good mechanical performance and high voltage electrical breakdown strength. In present ITER project, the breakdown strength need over 30 kV/mm, for future DEMO reactor, it will be greater than this value. In order to develop good property insulation materials to satisfy the requirements of future fusion reactor, high voltage breakdown strength measurement system at low temperature is necessary. In this paper, we will introduce our work on the design of this system. This measuring system has two parts: one is an electrical supply system which provides the high voltage from a high voltage power between two electrodes; the other is a cooling system which consists of a G-M cryocooler, a superfluid chamber and a heat switch. The two stage G-M cryocooler pre-cool down the system to 4K, the superfluid helium pot is used for a container to depress the helium to superfluid helium which cool down the sample to 1.8K and a mechanical heat switch connect or disconnect the cryocooler and the pot. In order to provide the sufficient time for the test, the cooling system is designed to keep the sample at 1.8K for 300 seconds.

  4. Study of the degradation of the breakdown voltage of a super-junction power MOSFET due to charge imbalance

    International Nuclear Information System (INIS)

    Kondekar, Pravin N.; Oh, Hwan-Sool; Kim, Young-Beom

    2006-01-01

    In this research, we analytically designed a super-junction (SJ) structure and used a simulation tool to study its off-state charge imbalance behavior. In the case of a SJ MOSFET (CoolMOS TM ), designed for the lowest specific on- resistance R on , the MOS part of the transistor (channel region) affected the symmetry, creating a charge imbalance; in addition to this, the imbalance in the SJ drift layer, which was inherently due to limitations in the fabrication process was simulated by varying the doping density of the pillars up to 10 %. The underlying physical mechanisms responsible for the reduction of the breakdown voltage (BV) were investigated in detail by using the electric field profiles and potential contours. The effect of varying the junction depth of a p-body/well and the cell pitch on the breakdown voltage was also analyzed. The trade off between BV sensitivity and specific R on was also investigated.

  5. Nonlinear current-voltage behavior in PZT thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Mi; Zhang, Weikang; Zhang, Zebin; Li, Shida; Zhang, Ping; Lan, Kuibo [Tianjin University, School of Electrical and Information Engineering, Tianjin (China)

    2017-05-15

    In this paper, Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were prepared by sol-gel synthesis and characterized by X-ray diffraction, field emission scanning electron microscopy and current-voltage measurements. Here, we demonstrate that in addition to the outstanding ferroelectric and dielectric properties, the PZT films also have remarkably nonlinear current-voltage characteristics. Considering the contact of semi-conductive grains in the PZT films, a double Schottky barrier (DSB) model may be responsible for such phenomena. The test results show that with the decrease of annealing temperature and the increase of the film thickness, the threshold voltages (V{sub th}) increase obviously. The maximum V{sub th} value of 60.95 V and the minimum value of 6.9 V in our experiments were obtained from the five-layered samples annealed at 600 C and the two-layered samples annealed at 700 C, respectively. As a result, PZT thin film may lead to efficient switching and sensing devices. (orig.)

  6. Reverse flow and vortex breakdown in a shear-thinning fluid

    International Nuclear Information System (INIS)

    Cabeza, C; Sarasua, G; Barrere, N; Marti, A C

    2011-01-01

    The effect of polymer concentration on the development of reverse secondary flow and vortex breakdown was studied using a viscoelastic solution of polyacrlylamide in water. The fluid was contained in cylindrical containers of two different radii, the top end wall of which rotated at a varying speed, thus, imparting a circulating motion to the fluid. Whereas using a newtonian fluid, streamlines will occupy the entire container, the flow of a shear-thinning fluid may divide into two cells of opposite circulating motion. The curve of critical Reynolds and elasticity numbers (Re, E) values corresponding to the development of reverse flow was obtained over a wide range of Re values. Vortex breakdown was found to occur at extremely low Re values.

  7. Energetic breakdowns and voltage hold-off between copper electrodes in vacuum

    International Nuclear Information System (INIS)

    Bottiglioni, F.; Bussac, J.P.

    1980-10-01

    In high power neutral beam injections, used for thermonuclear research, very high ion currents are extracted from large area ion sources, using an assembly of three or four extraction grids. The extraction system must be very reliable and unaffected by breakdowns that may occur between grids. The aim of the experiments described here, is to infer some empirical laws allowing to dimension the ion sources grid gaps and to assess what energy in the breakdowns leads to irreversible damages

  8. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

  9. Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

    International Nuclear Information System (INIS)

    Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

    2012-01-01

    We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two-dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (∼100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (∼50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate—drain distance of 1 μm. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz. (semiconductor devices)

  10. A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

    Science.gov (United States)

    Jamali Mahabadi, S. E.; Rajabi, Saba; Loiacono, Julian

    2015-09-01

    In this paper a partial silicon on insulator (PSOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) with periodic buried oxide layer (PBO) for enhancing breakdown voltage (BV) and self-heating effects (SHEs) is proposed for the first time. This new structure is called periodic buried oxide partial silicon on insulator (PBO-PSOI). In this structure, periodic small pieces of SiO2 were used as the buried oxide (BOX) layer in PSOI to modulate the electric field in the structure. It was demonstrated that the electric field is distributed more evenly by producing additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the PBO-PSOI structure. Hence, the area underneath the electric field curve increases which leads to higher breakdown voltage. Also a p-type Si window was introduced in the source side to force the substrate to share the vertical voltage drop, leading to a higher vertical BV. Furthermore, the Si window under the source and those between periodic pieces of SiO2 create parallel conduction paths between the active layer and substrate thereby alleviating the SHEs. Simulations with the two dimensional ATLAS device simulator from the Silvaco suite of simulation tools show that the BV of PBO-PSOI is 100% higher than that of the conventional partial SOI (C-PSOI) structure. Furthermore the PBO-PSOI structure alleviates SHEs to a greater extent than its C-PSOI counterpart. The achieved drain current for the PBO-PSOI structure (100 μA), at drain-source voltage of VDS = 100 V and gate-source voltage of VGS = 25 V, is shown to be significantly larger than that in C-PSOI and fully depleted SOI (FD-SOI) structures (87 μA and 51 μA respectively). Drain current can be further improved at the expense of BV by increasing the doping of the drift region.

  11. Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

    Science.gov (United States)

    Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

    2016-12-01

    Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

  12. Breakdown properties of irradiated MOS capacitors

    International Nuclear Information System (INIS)

    Paccagnella, A.; Candelori, A.; Pellizzer, F.; Fuochi, P.G.; Lavale, M.

    1996-01-01

    The authors have studied the effects of ionizing and non-ionizing radiation on the breakdown properties of different types of MOS capacitors, with thick (200 nm) and thin (down to 8 nm) oxides. In general, no large variations of the average breakdown field, time-to-breakdown at constant voltage, or charge-to-breakdown at constant voltage, or charge-to-breakdown values have been observed after high dose irradiation (20 Mrad(Si) 9 MeV electrons on thin and thick oxides, 17(Si) Mrad Co 60 gamma and 10 14 neutrons/cm 2 only on thick oxides). However, some modifications of the cumulative failure distributions have been observed in few of the oxides tested

  13. Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.; Grekhov, I. V. [Ioffe Physical–Technical Institute (Russian Federation)

    2017-03-15

    p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

  14. Source-Drain Punch-Through Analysis of High Voltage Off-State AlGaN/GaN HEMT Breakdown

    Science.gov (United States)

    Jiang, H.; Li, X.; Wang, J.; Zhu, L.; Wang, H.; Liu, J.; Wang, M.; Yu, M.; Wu, W.; Zhou, Y.; Dai, G.

    2017-06-01

    AlGaN/GaN high-electron mobility transistor’s (HEMT’s) off-state breakdown is investigated using conventional three-terminal off-state breakdown I-V measurement. Competition between gate leakage and source-injection buffer leakage (SIBL) is discussed in detail. It is found that the breakdown is dominated by source-injection which is sensitive to gate voltage and gate length at large gate-to-drain spacing (Lgd > 7μm), where a threshold drain voltage of the occurrence of the SIBL current in GaN buffer exists, and after this threshold voltage the SIBL current continually increased till the buffer breakdown. Our analysis showed that due to the punch-through effect in the buffer, a potential barrier between 2DEG and GaN buffer at the source side mainly controlled by the drain voltage determines the buffer leakage current and the occurrence of the following buffer breakdown, which could explain the experimentally observed breakdown phenomenon.

  15. Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

    Science.gov (United States)

    Watahiki, Tatsuro; Yuda, Yohei; Furukawa, Akihiko; Yamamuka, Mikio; Takiguchi, Yuki; Miyajima, Shinsuke

    2017-11-01

    Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes was lower than that of the Schottky barrier diode due to the higher barrier height against the electron. The ideality factor of the p-n diode was 1.31. It indicated that some portion of the recombination current at the interface contributed to the forward current, but the diffusion current was the dominant. The forward current more than 100 A/cm2 indicated the lower conduction band offset at the hetero-interface between Cu2O and Ga2O3 layers than that predicted from the bulk properties, resulting in such a high forward current without limitation. These results open the possibility of advanced device structures for wide bandgap Ga2O3 to achieve higher breakdown voltage and lower on-resistance.

  16. High-Voltage Breakdown Penalties for the Beam-Breakup Instability

    International Nuclear Information System (INIS)

    Ekdahl, Carl August

    2016-01-01

    The strength of the dangerous beam breakup (BBU) instability in linear induction accelerators (LIAs) is determined by the transverse coupling impedance Z_⊥ of the induction cell cavity. For accelerating gap width w less than the beam pipe radius b, the transverse impedance is theoretically proportional to w/b, favoring narrow gaps to suppress BBU. On the other hand, cells with narrow gaps cannot support high accelerating gradients, because of electrical breakdown and shorting of the gap. Thus, there is an engineering trade-off between BBU growth and accelerating gradient, which must be considered for next generation LIAs now being designed. In this article this tradeoff is explored, using a simple pillbox cavity as an illustrative example. For this model, widening the gap to reduce the probability of breakdown increases BBU growth, unless higher magnetic focusing fields are used to further suppress the instability.

  17. Voltage-stabilised elastomers with increased relative permittivity and high electrical breakdown strength by means of phase separating binary copolymer blends of silicone elastomers

    DEFF Research Database (Denmark)

    A Razak, Aliff Hisyam; Yu, Liyun; Skov, Anne Ladegaard

    2017-01-01

    Increased electrical breakdown strength and increased dielectric permittivity of silicone-based dielectric elastomers are achieved by means of the addition of so-called voltage-stabilisers prepared from PDMS–PPMS copolymers as well as PDMS–PEG copolymers in order to compensate for the negative...... effect of softness on electrical stability of silicone elastomers. The voltage-stabilised elastomer, incorporating a high-permittivity PDMS–PEG copolymer, possesses increased relative permittivity, high electrical breakdown strength, excellent network integrity and low dielectric loss and paves the way...

  18. Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

    Science.gov (United States)

    Ma, Pengfei; Du, Lulu; Wang, Yiming; Jiang, Ran; Xin, Qian; Li, Yuxiang; Song, Aimin

    2018-01-01

    An ultrathin, 5 nm, Al2O3 film grown by atomic-layer deposition was used as a gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The Al2O3 layer showed a low surface roughness of 0.15 nm, a low leakage current, and a high breakdown voltage of 6 V. In particular, a very high gate capacitance of 720 nF/cm2 was achieved, making it possible for the a-IGZO TFTs to not only operate at a low voltage of 1 V but also exhibit desirable properties including a low threshold voltage of 0.3 V, a small subthreshold swing of 100 mV/decade, and a high on/off current ratio of 1.2 × 107. Furthermore, even under an ultralow operation voltage of 0.6 V, well-behaved transistor characteristics were still observed with an on/off ratio as high as 3 × 106. The electron transport through the Al2O3 layer has also been analyzed, indicating the Fowler-Nordheim tunneling mechanism.

  19. Breakdown voltage at the electric terminals of GCFR-core flow test loop fuel rod simulators in helium and air

    International Nuclear Information System (INIS)

    Huntley, W.R.; Conley, T.B.

    1979-12-01

    Tests were performed to determine the ac and dc breakdown voltage at the terminal ends of a fuel rod simulator (FRS) in helium and air atmospheres. The tests were performed at low pressures (1 to 2 atm) and at temperatures from 20 to 350 0 C (68 to 660 0 F). The area of concern was the 0.64-mm (0.025-in.) gap between the coaxial conductor of the FRS and the sheaths of the four internal thermocouples as they exit the FRS. The tests were prformed to ensure a sufficient safety margin during Core Flow Test Loop (CFTL) operations that require potentials up to 350 V ac at the FRS terminals. The primary conclusion from the test results is that the CFTL cannot be operated safely if the terminal ends of the FRSs are surrounded by a helium atmosphere but can be operated safely in air

  20. High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

    Science.gov (United States)

    Bae, Jinho; Kim, Hyoung Woo; Kang, In Ho; Yang, Gwangseok; Kim, Jihyun

    2018-03-01

    We have demonstrated a β-Ga2O3 metal-semiconductor field-effect transistor (MESFET) with a high off-state breakdown voltage (344 V), based on a quasi-two-dimensional β-Ga2O3 field-plated with hexagonal boron nitride (h-BN). Both the β-Ga2O3 and h-BN were mechanically exfoliated from their respective crystal substrates, followed by dry-transfer onto a SiO2/Si substrate for integration into a high breakdown voltage quasi-two-dimensional β-Ga2O3 MESFETs. N-type conducting behavior was observed in the fabricated β-Ga2O3 MESFETs, along with a high on/off current ratio (>106) and excellent current saturation. A three-terminal off-state breakdown voltage of 344 V was obtained, with a threshold voltage of -7.3 V and a subthreshold swing of 84.6 mV/dec. The distribution of electric fields in the quasi-two-dimensional β-Ga2O3 MESFETs was simulated to analyze the role of the dielectric h-BN field plate in improving the off-state breakdown voltage. The stability of the field-plated β-Ga2O3 MESFET in air was confirmed after storing the MESFET in ambient air for one month. Our results pave the way for unlocking the full potential of β-Ga2O3 for use in a high-power nano-device with an ultrahigh breakdown voltage.

  1. A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

    International Nuclear Information System (INIS)

    Jamali Mahabadi, S E; Orouji, Ali A; Keshavarzi, P; Moghadam, Hamid Amini

    2011-01-01

    In this paper, for the first time, we propose a partial silicon-on-insulator (P-SOI) lateral double-diffused metal-oxide-semiconductor-field-effect-transistor (LDMOSFET) with a modified buried layer in order to improve breakdown voltage (BV) and self-heating effects (SHEs). The main idea of this work is to control the electric field by shaping the buried layer. With two steps introduced in the buried layer, the electric field distribution is modified. Also a P-type window introduced makes the substrate share the vertical voltage drop, leading to a high vertical BV. Moreover, four interface electric field peaks are introduced by the buried P-layer, the Si window and two steps, which modulate the electric field in the SOI layer and the substrate. Hence, a more uniform electric field is obtained; consequently, a high BV is achieved. Furthermore, the Si window creates a conduction path between the active layer and substrate and alleviates the SHE. Two-dimensional simulations show that the BV of double step partial silicon on insulator is nearly 69% higher and alleviates SHEs 17% in comparison with its single step partial SOI counterpart and nearly 265% higher and alleviate SHEs 18% in comparison with its conventional SOI counterpart

  2. A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT

    Science.gov (United States)

    Fu, Qiang; Zhang, Wan-Rong; Jin, Dong-Yue; Zhao, Yan-Xiao; Wang, Xiao

    2016-12-01

    The product of the cutoff frequency and breakdown voltage (fT×BVCEO) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N+-buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of fT×BVCEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness (TBOX) on fT, BVCEO, and the FOM of fT×BVCEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces fT, slightly increases BVCEO to some extent, but ultimately degrades the FOM of fT×BVCEO. Although the fT, BVCEO, and the FOM of fT×BVCEO can be improved by increasing SOI insulator SiO2 layer thickness TBOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick TBOX, a thin N+-buried layer is introduced into collector region to not only improve the FOM of fT×BVCEO, but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N+-buried layer in collector region is investigated in detail. The result show that the FOM of fT×BVCEO is improved and the device temperature decreases as the N+-buried layer shifts toward SOI substrate insulation layer. The approach to introducing a thin N+-buried layer

  3. A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT

    International Nuclear Information System (INIS)

    Fu Qiang; Zhang Wan-Rong; Jin Dong-Yue; Zhao Yan-Xiao; Wang Xiao

    2016-01-01

    The product of the cutoff frequency and breakdown voltage ( f T ×BV CEO ) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N + -buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of f T ×BV CEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness ( T BOX ) on f T , BV CEO , and the FOM of f T ×BV CEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces f T , slightly increases BV CEO to some extent, but ultimately degrades the FOM of f T ×BV CEO . Although the f T , BV CEO , and the FOM of f T ×BV CEO can be improved by increasing SOI insulator SiO 2 layer thickness T BOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO 2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick T BOX , a thin N + -buried layer is introduced into collector region to not only improve the FOM of f T ×BV CEO , but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N + -buried layer in collector region is investigated in detail. The result show that the FOM of f T ×BV CEO is improved and the device temperature decreases as the N + -buried layer shifts toward SOI substrate insulation layer

  4. Breakdown Voltage of CF3CHCl2 gas an Alternative to SF6 Gas using HV Test and Bonding Energy Methods

    Science.gov (United States)

    Juliandhy, Tedy; Haryono, T.; Suharyanto; Perdana, Indra

    2018-04-01

    For more than two decades of Sulphur Hexafluoride (SF6) gases is used as a gas insulation in high voltage equipment especially in substations. In addition to getting an advantage as an insulating gas. SF6 gas is recognized as one of the greenhouse effect gases that cause global warming. Under the Kyoto Protocol, SF6 gas is one of those gases whose use is restricted and gradually reduced to the presence of a replacement gas for SF6 gas. One of the alternative gas alternatives which have the potential of replacing SF6 gas as an insulating gas in Gas Insulated Switchgear (GIS) equipment in the substation is Dichlorotrifluoroethane (CF3CHCl2) gas. The purpose of this paper is to enable a comparison of breakdown voltage with high voltage test and method of calculating Bonding energy to Dichlorotrifluoroethane gas as substitute gas for SF6 gas. At 0.1 bar gas pressure obtained an average breakdown voltage of 18.68 kV / mm at 25oC chamber temperature and has the highest breakdown voltage at 50oC with a breakdown voltage of 19.56 kV / mm. The CF3CHCl2 gas has great potential as an insulating gas because it has more insulation ability high of SF6 gas, and is part of the gas recommended under the Kyoto Protocol. Gas CF3CHCl2 has the capacity to double the value of electronegativity greater than SF6 gas as a major requirement of gas isolation and has a value of Global Warming Potential (GWP) and Ozone Depleting lower than from SF6 gas.

  5. High voltage research (breakdown strengths of gaseous and liquid insulators). Semiannual report, October 1, 1977--March 31, 1978

    International Nuclear Information System (INIS)

    Christophorou, L.G.; James, D.R.; Pai, R.Y.; Mathis, R.A.; Sauers, I.; Pace, M.O.; Bouldin, D.W.; Christodoulides, A.A.; Chan, C.C.

    1978-06-01

    The work on gas mixtures is focused on combinations of gases consisting of strongly electron-attaching components and one or more electron slowing-down components. Hypotheses based on the positions of electronically excited states are borne out experimentally in the low pressure ( 6 . Although the ionization cross section for Ar is very much greater than that for Ne, Ar is a superior buffer gas. A theoretical discussion is given which describes the relation between the dielectric strength of a gas to its physical parameters including the electron attachment cross section, the ionization cross section, the ionization potential, and the electron energy distribution function. Also discussed is the importance of perfluorination in hydrocarbons to effect an increase in the electron attachment cross section and electron affinity and a decrease in the ionization cross section, and hence an increase in dielectric strength. Attachment rates were measured as a function of the mean electron energy for a comprehensive list of perfluorocarbons. Breakdown voltages were determined for SF 6 and for SF 6 (20%)/N 2 (80%) as a function of temperature from -15 0 C to 85 0 C. Environmental aspects of gas dielectrics pertaining to gas decomposition and toxicity were studied

  6. Reliable and Low-Voltage Electrowetting on Thin Parylene Films

    NARCIS (Netherlands)

    Dhindsa, M.S.; Kuiper, S.; Kumar, R.; Heikenfeld, J.

    2011-01-01

    The stability of an electrowetting system is dependent upon the choice of liquids, the dielectric material and the operating voltage.Substantial progress is reported herein on use of 300 nm thick poly-tetrafluoro-para-xylylene) (Parylene HT) films for almost 100° of reliable electrowetting

  7. The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

    International Nuclear Information System (INIS)

    Mizoshiri, Mizue; Mikami, Masashi; Ozaki, Kimihiro

    2013-01-01

    The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi 0.5 Sb 1.5 Te 3 (p-type) and Bi 2 Te 2.7 Se 0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr 2 Te 3 . The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr 2 Te 3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

  8. Studying the Dynamics of Breakdown of Thin Horizontal Liquid Layers with Local Heating

    Directory of Open Access Journals (Sweden)

    Spesivtsev Serafim

    2016-01-01

    Full Text Available Experimental study of liquid layers breakdown when heated locally from the substrate side was made. Water and ethanol were used as working liquids with a layer thickness of 300 μm. Basic steps of the breakdown process were found and mean velocities of the dry spot formation were determined; the values are 0.06 mm/sec for ethanol and 5.15 mm/sec for water. The formation of residual layer over the hot-spot before the breakdown has been found for both liquids. The creation of a droplet cluster near the heating region is observed when using water as a working fluid. It was shown that evaporation is one of the general factors influencing the process of layer breakdown and dry spot formation as well as thermocapillary effect.

  9. Current-voltage relation for thin tunnel barriers: Parabolic barrier model

    DEFF Research Database (Denmark)

    Hansen, Kim; Brandbyge, Mads

    2004-01-01

    We derive a simple analytic result for the current-voltage curve for tunneling of electrons through a thin uniform insulating layer modeled by a parabolic barrier. Our model, which goes beyond the Wentzel–Kramers–Brillouin approximation, is applicable also in the limit of highly transparant...

  10. Color change mechanism of niobium oxide thin film with incidental light angle and applied voltage

    Energy Technology Data Exchange (ETDEWEB)

    Komatsu, Isao [Course of Information Science and Technology, Graduate School of Science and Technology, Tokai University (Japan); Aoki, Hayata [Course of Electro Photo Optics, Graduate School of Engineering, Tokai University (Japan); Ebisawa, Mizue [Tokyo Metropolitan Industrial Technology Research Institute (Japan); Kuroda, Akihiro [Department of Optical and Imaging Science & Technology, Faculty of Engineering, Tokai University (Japan); Kuroda Consulting Incorporated (Japan); Kuroda, Koichi [Kuroda Consulting Incorporated (Japan); Maeda, Shuichi [Course of Information Science and Technology, Graduate School of Science and Technology, Tokai University (Japan); Course of Electro Photo Optics, Graduate School of Engineering, Tokai University (Japan); Department of Optical and Imaging Science & Technology, Faculty of Engineering, Tokai University (Japan)

    2016-03-31

    Niobium oxide thin layers made by the anodization process showed coloration owing to thin film interference. The reflection spectra depended on both the applied voltage and incident light angle. Large color differences were observed at incident light angles between 5° and 70°, when the applied voltage was over 60 V. In this study, we explored the cause of these results using ellipsometry and goniophotometry to understand the transition of optical constants and the reflection spectra with applied voltage. Finally, we concluded that the coloration of the reflection spectra, which included only a first-order interference peak, exhibits a smaller change because the first order interference peak has a wider half value width than higher order interference peaks. - Highlights: • We investigated color change of Nb{sub 2}O{sub 5} oxide thin layers with incidental light angle. • The reflection spectra shift to lower wavelength region with increasing incident light angle. • The reflection spectra shift to higher wavelength region with increasing applied voltage. • First-order interference has wider half value width, and exhibits small color change.

  11. An easy way to measure accurately the direct magnetoelectric voltage coefficient of thin film devices

    Energy Technology Data Exchange (ETDEWEB)

    Poullain, Gilles, E-mail: gilles.poullain@ensicaen.fr; More-Chevalier, Joris; Cibert, Christophe; Bouregba, Rachid

    2017-01-15

    Tb{sub x}Dy{sub 1−x}Fe{sub 2}/Pt/Pb(Zr{sub x}, Ti{sub 1−x})O{sub 3} thin films were grown on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate by multi-target sputtering. The magnetoelectric voltage coefficient α{sup Η}{sub ΜΕ} was determined at room temperature using a lock-in amplifier. By adding, in series in the circuit, a capacitor of the same value as that of the device under test, we were able to demonstrate that the magnetoelectric device behaves as a voltage source. Furthermore, a simple way to subtract the stray voltage arising from the flow of eddy currents in the measurement set-up, is proposed. This allows the easy and accurate determination of the true magnetoelectric voltage coefficient. A large α{sup Η}{sub ΜΕ} of 8.3 V/cm. Oe was thus obtained for a Terfenol-D/Pt/PZT thin film device, without DC magnetic field nor mechanical resonance. - Highlights: • Magnetoelectric device behaves as a voltage source. • A simple way to subtract eddy currents during the measurement, is proposed.

  12. Voltage transients in thin-film InSb Hall sensor

    Directory of Open Access Journals (Sweden)

    Alexey Bardin

    Full Text Available The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μV on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films. 2000 MSC: 41A05, 41A10, 65D05, 65D17, Keywords: Thin-films, Semiconductors, Hall sensor, InSb, thermo-e.m.f.

  13. Laser-induced thermoelectric voltage in normal state MgB2 thin films

    International Nuclear Information System (INIS)

    Zhao Songqing; Zhou Yueliang; Zhao Kun; Wang Shufang; Chen Zhenghao; Jin Kuijuan; Lue Huibin; Cheng Bolin; Yang Guozhen

    2006-01-01

    Laser-induced voltage has been observed in c-axis oriented MgB 2 thin film at room temperature. The amplitude of the signal is approximately proportional to the film thickness. For the film with the thickness of 150 nm, a very fast response has been detected when the film was irradiated by a 308 nm pulsed laser of 20 ns duration. The rise time and full width at half-maximum of the signal are about 3 and 25 ns, respectively. The physical origin of the laser-induced voltage can be attributed to a transverse thermoelectricity due to the anisotropic thermopower in MgB 2

  14. Investigation of Processes and Factors Regulating the Generation, Maintenance and Breakdown of Bioluminescent Thin Layers

    National Research Council Canada - National Science Library

    Widder, Edith

    2001-01-01

    .... Katz's submersible holographic camera mounted on the upper work platform. Thin layers were located using real-time sensor feedback from intensified video recordings of stimulated bioluminescence...

  15. Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films

    International Nuclear Information System (INIS)

    Villafuerte, Manuel; Juarez, Gabriel; Heluani, Silvia P. de; Comedi, David

    2007-01-01

    We have measured the current-voltage characteristics at room temperature of a nanocrystalline TiO 2 thin film fabricated by reactive RF-sputtering deposition and sandwiched between ITO (indium-tin-oxide)-buffered glass substrate and an indium top electrode. The I-V characteristics are ohmic for low voltages and become non-linear, hysteretic and asymmetric as the voltage is increased. The system is shown to be well represented by two distinct resistance states in the non-ohmic region. Current transient evolutions were also measured for constant voltage excitations. The resistance is stable in time for voltages in the ohmic regime. In contrast, for voltages in the non-ohmic regime, the resistance has a small variation for a short period of time (order of tens seconds) and then increases with time. For those transients, long characteristic times (on the order of tens of minutes up to hours) were found. The behavior of the system is discussed on the basis of experimental results reported in the literature for similar systems and existing models for electric-field induced resistive switching

  16. High voltage research (breakdown strengths of gaseous and liquid insulators). Semiannual report, October 1, 1977--March 31, 1978. [Summaries of research activities at Oak Ridge National Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Christophorou, L.G.; James, D.R.; Pai, R.Y.; Mathis, R.A.; Sauers, I.; Pace, M.O.; Bouldin, D.W.; Christodoulides, A.A.; Chan, C.C.

    1978-06-01

    The work on gas mixtures is focused on combinations of gases consisting of strongly electron-attaching components and one or more electron slowing-down components. Hypotheses based on the positions of electronically excited states are borne out experimentally in the low pressure (<1000 torr) breakdown measurements. The high pressure work shows dramatically the importance of the electron scattering cross section on breakdown strength by comparing Ar with Ne as single gases and in mixtures with SF/sub 6/. Although the ionization cross section for Ar is very much greater than that for Ne, Ar is a superior buffer gas. A theoretical discussion is given which describes the relation between the dielectric strength of a gas to its physical parameters including the electron attachment cross section, the ionization cross section, the ionization potential, and the electron energy distribution function. Also discussed is the importance of perfluorination in hydrocarbons to effect an increase in the electron attachment cross section and electron affinity and a decrease in the ionization cross section, and hence an increase in dielectric strength. Attachment rates were measured as a function of the mean electron energy for a comprehensive list of perfluorocarbons. Breakdown voltages were determined for SF/sub 6/ and for SF/sub 6/ (20%)/N/sub 2/(80%) as a function of temperature from -15/sup 0/C to 85/sup 0/C. Environmental aspects of gas dielectrics pertaining to gas decomposition and toxicity were studied.

  17. Improving breakdown voltage and self-heating effect for SiC LDMOS with double L-shaped buried oxide layers

    Science.gov (United States)

    Bao, Meng-tian; Wang, Ying

    2017-02-01

    In this paper, a SiC LDMOS with double L-shaped buried oxide layers (DL-SiC LDMOS) is investigated and simulated. The DL-SiC LDMOS consists of two L-shaped buried oxide layers and two SiC windows. Using 2-D numerical simulation software, Atlas, Silvaco TCAD, the breakdown voltage, and the self-heating effect are discussed. The double-L shaped buried oxide layers and SiC windows in the active area can introduce an additional electric field peak and make the electric field distribution more uniform in the drift region. In addition, the SiC windows, which connect the active area to the substrate, can facilitate heat dissipation and reduce the maximum lattice temperature of the device. Compared with the BODS structure, the DL-SiC LDMOS and BODS structures have the same device parameters, except of the buried oxide layers. The simulation results of DL-SiC LDMOS exhibits outstanding characteristics including an increase of the breakdown voltage by 32.6% to 1220 V, and a low maximum lattice temperature (535 K) at room temperature.

  18. Weibull Analysis of Electrical Breakdown Strength as an Effective Means of Evaluating Elastomer Thin Film Quality

    DEFF Research Database (Denmark)

    Silau, Harald; Stabell, Nicolai Bogø; Petersen, Frederik Riddersholm

    2018-01-01

    To realize the commercial potential of dielectric elastomers, reliable, large-scale film production is required. Ensuring proper mixing and subsequently avoiding demixing after, for example, pumping and coating of elastomer premix in an online process is not facile. Weibull analysis...... of the electrical breakdown strength of dielectric elastomer films is shown to be an effective means of evaluating the film quality. The analysis is shown to be capable of distinguishing between proper and improper mixing schemes where similar analysis of ultimate mechanical properties fails to distinguish....

  19. Voltage transients in thin-film InSb Hall sensor

    Science.gov (United States)

    Bardin, Alexey; Ignatjev, Vyacheslav; Orlov, Andrey; Perchenko, Sergey

    The work is reached to study temperature transients in thin-film Hall sensors. We experimentally study InSb thin-film Hall sensor. We find transients of voltage with amplitude about 10 μ V on the sensor ports after current switching. We demonstrate by direct measurements that the transients is caused by thermo-e.m.f., and both non-stationarity and heterogeneity of temperature in the film. We find significant asymmetry of temperature field for different direction of the current, which is probably related to Peltier effect. The result can be useful for wide range of scientist who works with switching of high density currents in any thin semiconductor films.

  20. Application of pentacene thin-film transistors with controlled threshold voltages to enhancement/depletion inverters

    Science.gov (United States)

    Takahashi, Hajime; Hanafusa, Yuki; Kimura, Yoshinari; Kitamura, Masatoshi

    2018-03-01

    Oxygen plasma treatment has been carried out to control the threshold voltage in organic thin-film transistors (TFTs) having a SiO2 gate dielectric prepared by rf sputtering. The threshold voltage linearly changed in the range of -3.7 to 3.1 V with the increase in plasma treatment time. Although the amount of change is smaller than that for organic TFTs having thermally grown SiO2, the tendency of the change was similar to that for thermally grown SiO2. To realize different plasma treatment times on the same substrate, a certain region on the SiO2 surface was selected using a shadow mask, and was treated with oxygen plasma. Using the process, organic TFTs with negative threshold voltages and those with positive threshold voltages were fabricated on the same substrate. As a result, enhancement/depletion inverters consisting of the organic TFTs operated at supply voltages of 5 to 15 V.

  1. The local domain wall position in ferromagnetic thin wires: simultaneous measurement of resistive and transverse voltages at multiple points

    International Nuclear Information System (INIS)

    Hanada, R.; Sugawara, H.; Aoki, Y.; Sato, H.; Shigeto, K.; Shinjo, T.; Ono, T.; Miyajima, H.

    2002-01-01

    We have simultaneously measured the field dependences of voltages at multiple pairs of resistance and transverse voltage probes in ferromagnetic wires (with either magnetic or non-magnetic voltage probes). Both the resistive (through the giant magnetoresistance and anisotropic magnetoresistance) and transverse voltages (through the planar Hall effect) exhibit abrupt jumps, reflecting discrete motion of domain walls or rotations of magnetization. Voltage probes, even if non-magnetic, are found to affect the jump fields depending on the sample conditions. We demonstrate that the specific information on the domain (wall) motion along a thin ferromagnetic wire could be obtained from the jump fields. (author)

  2. Gigantic transverse voltage induced via off-diagonal thermoelectric effect in CaxCoO2 thin films

    Science.gov (United States)

    Takahashi, Kouhei; Kanno, Tsutomu; Sakai, Akihiro; Adachi, Hideaki; Yamada, Yuka

    2010-07-01

    Gigantic transverse voltages exceeding several tens volt have been observed in CaxCoO2 thin films with tilted c-axis orientation upon illumination of nanosecond laser pulses. The voltage signals were highly anisotropic within the film surface showing close relation with the c-axis tilt direction. The magnitude and the decay time of the voltage strongly depended on the film thickness. These results confirm that the large laser-induced voltage originates from a phenomenon termed the off-diagonal thermoelectric effect, by which a film out-of-plane temperature gradient leads to generation of a film in-plane voltage.

  3. High voltage research (breakdown strengths of gaseous and liquid insulators). Semiannual report, April 1--September 30, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Christophorou, L. G.; James, D. R.; Pai, R. Y.; Mathis, R. A.; Pace, M. O.; Bouldin, D. W.; Christodoulides, A. A.; Chan, C. C.

    1977-11-01

    Direct current breakdown strength measurements on a large number of multicomponent gas mixtures at low (approximately less than 1 atm) and high (approximately less than 5 atm) pressures led to the discovery of many gas mixtures of electron-attaching gases and strongly electron-attaching gases with N/sub 2/ and C/sub 3/F/sub 8/ which are superior to SF/sub 6/. Of special significance are mixtures containing C/sub 4/F/sub 6/ (perfluoro-2-butyne). The breakdown strength of one such mixture (20 percent C/sub 4/F/sub 6/ to 80 percent SF/sub 6/) is approximately 30 percent higher than pure SF/sub 6/ under identical conditions, both at low (approximately 0.7 atm) and high (4.6 atm) pressures. Perfluorocyclohexene (C/sub 6/F/sub 10/) and C/sub 5/F/sub 8/ (perfluorocyclopentene) were found at low pressure (approximately 0.2 atm) to be, respectively, approximately 2.1 and 2.2 times better than SF/sub 6/ under comparable conditions; they both have a potential as additives in gas mixtures. The effect of the inelastic electron scattering properties of a gas via negative ion resonances in the low-energy range (1 to approximately 4 eV) on the breakdown strength has been demonstrated for H/sub 2/, N/sub 2/, and CO and binary mixtures of these with SF/sub 6/ and C/sub 4/F/sub 6/ (perfluoro-2-butyne). The construction of a new high pressure (to approximately 11 atm), variable temperature (-50/sup 0/C to + 150/sup 0/C) apparatus has been completed and a practical test facility utilizing cylindrical electrode geometries has been put into operation; the first results on the latter apparatus were on SF/sub 6/-N/sub 2/ and c-C/sub 4/F/sub 8/--N/sub 2/ mixtures. Studies of environmental effects of dielectric gases via their electron-impact-induced decompositions and analysis of their breakdown products have begun using mass spectrometry and gas chromatography; C/sub 4/F/sub 6/ (perfluoro-2-butyne) seems to be resistant to electron-impact-induced decomposition indicating long

  4. Room-temperature low-voltage electroluminescence in amorphous carbon nitride thin films

    Science.gov (United States)

    Reyes, R.; Legnani, C.; Ribeiro Pinto, P. M.; Cremona, M.; de Araújo, P. J. G.; Achete, C. A.

    2003-06-01

    White-blue electroluminescent emission with a voltage bias less than 10 V was achieved in rf sputter-deposited amorphous carbon nitride (a-CN) and amorphous silicon carbon nitride (a-SiCN) thin-film-based devices. The heterojunction structures of these devices consist of: Indium tin oxide (ITO), used as a transparent anode; amorphous carbon film as an emission layer, and aluminum as a cathode. The thickness of the carbon films was about 250 Å. In all of the produced diodes, a stable visible emission peaked around 475 nm is observed at room temperature and the emission intensity increases with the current density. For an applied voltage of 14 V, the luminance was about 3 mCd/m2. The electroluminescent properties of the two devices are discussed and compared.

  5. Enhancement of breakdown voltage for fully-vertical GaN-on-Si p-n diode by using strained layer superlattice as drift layer

    Science.gov (United States)

    Mase, Suguru; Hamada, Takeaki; Freedsman, Joseph J.; Egawa, Takashi

    2018-06-01

    We have demonstrated a vertical GaN-on-Si p-n diode with breakdown voltage (BV) as high as 839 V by using a low Si-doped strained layer superlattice (SLS). The p-n vertical diode fabricated by using the n‑-SLS layer as a part of the drift layer showed a remarkable enhancement in BV, when compared with the conventional n‑-GaN drift layer of similar thickness. The vertical GaN-on-Si p-n diodes with 2.3 μm-thick n‑-GaN drift layer and 3.0 μm-thick n‑-SLS layer exhibited a differential on-resistance of 4.0 Ω · cm2 and a BV of 839 V.

  6. Preparation Nano-Structure Polytetrafluoroethylene (PTFE Functional Film on the Cellulose Insulation Polymer and Its Effect on the Breakdown Voltage and Hydrophobicity Properties

    Directory of Open Access Journals (Sweden)

    Jian Hao

    2018-05-01

    Full Text Available Cellulose insulation polymer is an important component of oil-paper insulation, which is widely used in power transformer. The weight of the cellulose insulation polymer materials is as high as tens of tons in the larger converter transformer. Excellent performance of oil-paper insulation is very important for ensuring the safe operation of larger converter transformer. An effective way to improve the insulation and the physicochemical property of the oil impregnated insulation pressboard/paper is currently a popular research topic. In this paper, the polytetrafluoroethylene (PTFE functional film was coated on the cellulose insulation pressboard by radio frequency (RF magnetron sputtering to improve its breakdown voltage and the hydrophobicity properties. X-ray photoelectron spectroscopy (XPS results show that the nano-structure PTFE functional film was successfully fabricated on the cellulose insulation pressboard surface. The scanning electron microscopy (SEM and X-ray diffraction (XRD present that the nanoscale size PTFE particles were attached to the pressboard surface and it exists in the amorphous form. Atomic force microscopy (AFM shows that the sputtered pressboard surface is still rough. The rough PTFE functional film and the reduction of the hydrophilic hydroxyl of the surface due to the shielding effect of PTFE improve the breakdown and the hydrophobicity properties of the cellulose insulation pressboard obviously. This paper provides an innovative way to improve the performance of the cellulose insulation polymer.

  7. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-01-04

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

  8. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-01-04

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  9. Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Jun-Young; Ha, Tae-Jun, E-mail: taejunha0604@gmail.com

    2017-08-15

    Highlights: • We demonstrate the potential of solution-processed boron nitride (BN) thin films for nanoelectronics. • Improved interfacial characteristics reduced the leakage current by three orders of magnitude. • The BN encapsulation improves all the device key metrics of low-voltage SWCNT-TFTs. • Such improvements were achieved by reduced interaction of interfacial localized states. - Abstract: In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

  10. Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Kuan-Hsien; Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Wu, Ming-Siou; Hung, Yi-Syuan; Sze, Simon M. [Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Hung, Pei-Hua; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsieh, Tien-Yu [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Yeh, Bo-Liang [Advanced Display Technology Research Center, AU Optronics, No. 1, Li-Hsin Rd. 2, Hsinchu Science Park, Hsinchu 30078, Taiwan (China)

    2014-03-31

    This Letter investigates abnormal channel width-dependent threshold voltage variation in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Unlike drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, the wider the channel, the larger the threshold voltage observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider channel devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast IV measurement is utilized to demonstrate the self-heating induced anomalous channel width-dependent threshold voltage variation.

  11. Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors

    Science.gov (United States)

    Song, Yang; Katsman, Alexander; Butcher, Amy L.; Paine, David C.; Zaslavsky, Alexander

    2017-10-01

    Thin film transistors (TFTs) based on transparent oxide semiconductors, such as indium zinc oxide (IZO), are of interest due to their improved characteristics compared to traditional a-Si TFTs. Previously, we reported on top-gated IZO TFTs with an in-situ formed HfO2 gate insulator and IZO active channel, showing high performance: on/off ratio of ∼107, threshold voltage VT near zero, extracted low-field mobility μ0 = 95 cm2/V·s, and near-perfect subthreshold slope at 62 mV/decade. Since device stability is essential for technological applications, in this paper we report on the temporal and voltage stress stability of IZO TFTs. Our devices exhibit a small negative VT shift as they age, consistent with an increasing carrier density resulting from an increasing oxygen vacancy concentration in the channel. Under gate bias stress, freshly annealed TFTs show a negative VT shift during negative VG gate bias stress, while aged (>1 week) TFTs show a positive VT shift during negative VG stress. This indicates two competing mechanisms, which we identify as the field-enhanced generation of oxygen vacancies and the field-assisted migration of oxygen vacancies, respectively. A simplified kinetic model of the vacancy concentration evolution in the IZO channel under electrical stress is provided.

  12. The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

    International Nuclear Information System (INIS)

    Mao Wei; Hao Yue; Ma Xiao-Hua; Wang Chong; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Yang Lin-An; Yang Ling; Zhang Kai; Zhang Nai-Qian; Pei Yi; Yang Cui

    2011-01-01

    A GaN/Al 0.3 Ga 0.7 N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO 2 insulator (HfO 2 -FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO 2 -FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO 2 insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  13. Quantized dissipation and random telegraph voltage noise in epitaxial BiSrCaCuO thin films

    International Nuclear Information System (INIS)

    Jung, G.; Savo, B.; Vecchione, A.

    1993-01-01

    In this paper we report on the observation of correlated multiple-voltage RTN switching in high quality epitaxial BiSrCaCuO thin film. We ascribe the correlated noise to the quantization of flux flow dissipation in the film. (orig.)

  14. Feasibility of X-ray analysis of multi-layer thin films at a single beam voltage

    International Nuclear Information System (INIS)

    Statham, P J

    2010-01-01

    Multi-layer analysis using electron beam excitation and X-ray spectrometry is a powerful tool for characterising layers down to 1 nm thickness and with typically 1 μm lateral resolution but does not always work. Most published applications have used WDS with many measurements at different beam voltages and considerable experience has been needed to choose lines and voltages particularly for complex multi-layer problems. A new objective mathematical approach is described which demonstrates whether X-ray analysis can obtain reliable results for an arbitrary multi-layer problem. A new algorithm embodied in 'ThinFilmID' software produces a single plot that shows feasibility of achieving results with a single EDS spectrum and suggests the optimal beam voltage. Synthesis of EDS spectra allows the precision in results to be estimated and acquisition conditions modified before wasting valuable instrument time. Thus, practicality of multi-layer thin film analysis at a single beam voltage can now be established without the extensive experimentation that was previously required by a microanalysis expert. Examples are shown where the algorithm discovers viable single-voltage conditions for applications that experts previously thought could only be addressed using measurements at more than one beam voltage.

  15. Space charge inhibition effect of nano-Fe{sub 3}O{sub 4} on improvement of impulse breakdown voltage of transformer oil based on improved Kerr optic measurements

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Qing, E-mail: yangqing@cqu.edu.cn; Yu, Fei; Sima, Wenxia [State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Shapingba District, Chongqing, 400044 (China); Zahn, Markus [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2015-09-15

    Transformer oil-based nanofluids (NFs) with 0.03 g/L Fe{sub 3}O{sub 4} nanoparticle content exhibit 11.2% higher positive impulse breakdown voltage levels than pure transformer oils. To study the effects of the Fe{sub 3}O{sub 4} nanoparticles on the space charge in transformer oil and to explain why the nano-modified transformer oil exhibits improved impulse breakdown voltage characteristics, the traditional Kerr electro-optic field mapping technique is improved by increasing the length of the parallel-plate electrodes and by using a photodetector array as a high light sensitivity device. The space charge distributions of pure transformer oil and of NFs containing Fe{sub 3}O{sub 4} nanoparticles can be measured using the improved Kerr electro-optic field mapping technique. Test results indicate a significant reduction in space charge density in the transformer oil-based NFs with the Fe{sub 3}O{sub 4} nanoparticles. The fast electrons are captured by the nanoparticles and are converted into slow-charged particles in the NFs, which then reduce the space charge density and result in a more uniform electric field distribution. Streamer propagation in the NFs is also obstructed, and the breakdown strengths of the NFs under impulse voltage conditions are also improved.

  16. Adjustable threshold-voltage in all-inkjet-printed organic thin film transistor using double-layer dielectric structures

    International Nuclear Information System (INIS)

    Wu, Wen-Jong; Lee, Chang-Hung; Hsu, Chun-Hao; Yang, Shih-Hsien; Lin, Chih-Ting

    2013-01-01

    An all-inkjet-printed organic thin film transistor (OTFT) with a double-layer dielectric structure is proposed and implemented in this study. By using the double-layer structure with different dielectric materials (i.e., polyvinylphenol with poly(vinylidene fluoride-co-hexafluoropropylene)), the threshold-voltage of OTFT can be adjusted. The threshold-voltage shift can be controlled by changing the composition of dielectric layers. That is, an enhancement-mode OTFT can be converted to a depletion-mode OTFT by selectively printing additional dielectric layers to form a high-k/low-k double-layer structure. The printed OTFT has a carrier mobility of 5.0 × 10 −3 cm 2 /V-s. The threshold-voltages of the OTFTs ranged between − 13 V and 10 V. This study demonstrates an additional design parameter for organic electronics manufactured using inkjet printing technology. - Highlights: • A double-layer dielectric organic thin film transistor, OTFT, is implemented. • The threshold voltage of OTFT can be configured by the double dielectric structure. • The composition of the dielectric determines the threshold voltage shift. • The characteristics of OTFTs can be adjusted by double dielectric structures

  17. Sensitivity of the threshold voltage of organic thin-film transistors to light and water

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Cong; Marinov, Ognian; Deen, M. Jamal; Selvaganapathy, Ponnambalam Ravi [McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4K1 (Canada); Wu, Yiliang [Xerox Research Centre, 2660 Speakman Dr., Mississauga, Ontario L5K 2L1 (Canada)

    2015-05-14

    Analyses of extensive experiments with organic thin-film transistors (OTFTs) indicate that the threshold voltage V{sub T} of an OTFT has a temporal differential sensitivity. In particular, V{sub T} changes initially by changing the light illumination intensity or making/removing a contact of water with the organic semiconductor. Keeping the conditions stationary, then the initial shift of V{sub T} diminishes, since the time dependence of V{sub T} gradually recovers the OTFT to the state before applying the change in the environmental conditions. While still causing a differential and time-variant shift of V{sub T}, the deionized water does not have a dramatic impact on OTFTs that use the polymer DKPP-βT (diketopyrrolopyrrole β-unsubstituted quaterthiophene) as the active semiconductor material. Observations for the impact of water are made from experiments with an OTFT that has a microfluidic channel on the top the electrical channel, with the water in the microfluidic channel in direct contact with the electrical channel of the OTFT. This arrangement of electrical and microfluidic channels is a novel structure of the microfluidic OTFT, suitable for sensing applications of liquid analytes by means of organic electronics.

  18. Redefinition of the self-bias voltage in a dielectrically shielded thin sheath RF discharge

    Science.gov (United States)

    Ho, Teck Seng; Charles, Christine; Boswell, Rod

    2018-05-01

    In a geometrically asymmetric capacitively coupled discharge where the powered electrode is shielded from the plasma by a layer of dielectric material, the self-bias manifests as a nonuniform negative charging in the dielectric rather than on the blocking capacitor. In the thin sheath regime where the ion transit time across the powered sheath is on the order of or less than the Radiofrequency (RF) period, the plasma potential is observed to respond asymmetrically to extraneous impedances in the RF circuit. Consequently, the RF waveform on the plasma-facing surface of the dielectric is unknown, and the behaviour of the powered sheath is not easily predictable. Sheath circuit models become inadequate for describing this class of discharges, and a comprehensive fluid, electrical, and plasma numerical model is employed to accurately quantify this behaviour. The traditional definition of the self-bias voltage as the mean of the RF waveform is shown to be erroneous in this regime. Instead, using the maxima of the RF waveform provides a more rigorous definition given its correlation with the ion dynamics in the powered sheath. This is supported by a RF circuit model derived from the computational fluid dynamics and plasma simulations.

  19. Impulse breakdown of liquids

    CERN Document Server

    Ushakov, Vasily Y

    2007-01-01

    The book describes the main physical processes and phenomena in pulsed electric breakdown. The knowledge and the control of the electric breakdown of liquids is important not only for the insulation inside power systems but it is also used for the creation and information of high voltage and high current pulses. Such high-voltage micro- and nanosecond pulses find wide application in experimental physics, electro discharge technology, physics of dielectrics, radar detection and ranging, high-speed photography. The nature of charge carriers, mechanism of formation and evolution of the gas phase,

  20. Room temperature resistive state switching with hysteresis in GdMnO3 thin film with low threshold voltage

    International Nuclear Information System (INIS)

    Nath, Rajib; Raychaudhuri, A. K.; Mukovskii, Ya. M.; Andreev, N.; Chichkov, Vladimir

    2014-01-01

    In this paper, we report a room temperature resistive state switching with hysteresis, in a thin film of GdMnO 3 grown on NdGaO 3 substrate. The switched states have a resistance ratio ≈10 3 . The switching is unipolar in nature, with a low set voltage <3 V, while the reset voltage <0.3 V. The switching occurs between a high resistance polaronic insulating state and a low resistance metallic state. The resistance state transition has been ascribed to an electronic mechanism that originates from co-existing phases (created by charge disproportionation) that can undergo a percolative transition enabled by the applied bias

  1. Low-voltage polymer/small-molecule blend organic thin-film transistors and circuits fabricated via spray deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hunter, By Simon; Anthopoulos, Thomas D., E-mail: t.anthopoulos@ic.ac.uk [Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington SW7 2AZ (United Kingdom); Ward, Jeremy W.; Jurchescu, Oana D. [Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109 (United States); Payne, Marcia M.; Anthony, John E. [Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506 (United States)

    2015-06-01

    Organic thin-film electronics have long been considered an enticing candidate in achieving high-throughput manufacturing of low-power ubiquitous electronics. However, to achieve this goal, more work is required to reduce operating voltages and develop suitable mass-manufacture techniques. Here, we demonstrate low-voltage spray-cast organic thin-film transistors based on a semiconductor blend of 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene and poly(triarylamine). Both semiconductor and dielectric films are deposited via successive spray deposition in ambient conditions (air with 40%–60% relative humidity) without any special precautions. Despite the simplicity of the deposition method, p-channel transistors with hole mobilities of >1 cm{sup 2}/Vs are realized at −4 V operation, and unipolar inverters operating at −6 V are demonstrated.

  2. Solvent-induced crystallization for hybrid perovskite thin-film photodetector with high-performance and low working voltage

    International Nuclear Information System (INIS)

    Hu, Wei; Yang, Shuzhen; Fan, Peng; Pan, Anlian; Wu, Runsheng; Yang, Junliang

    2017-01-01

    Organometal trihalide perovskites have emerged as a class of solution-processed semiconductors exhibiting remarkable optoelectronic properties. Using a high-quality perovskite thin film prepared by solvent-induced crystallization method and adopting a novel device configuration based on photon recycling effect, a perovskite thin-film photodetector has been constructed with the highest external quantum efficiency of 4.1  ×  10 4 % and responsivity of 219 A W −1 at a low bias of 1 V so far. The device working mechanism was further disclosed based on energy band bending model. The high-performance and low working-voltage perovskite thin-film photodetector will find potential applications in photodetection and optoelectronic integrated circuits. (paper)

  3. Atomically Smooth Epitaxial Ferroelectric Thin Films for the Development of a Nonvolatile, Ultrahigh Density, Fast, Low Voltage, Radiation-Hard Memory

    National Research Council Canada - National Science Library

    Ahn, Charles H

    2006-01-01

    The goal of this research is to fabricate atomically smooth, single crystalline, complex oxide thin film nanostructures for use in a nonvolatile, ultrahigh density, fast, low voltage, radiation-hard memory...

  4. Rapid quantitative analysis of elemental composition and depth profile of Cu(In,Ga)Se{sub 2} thin solar cell film using laser-induced breakdown spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    In, Jung-Hwan; Kim, Chan-Kyu; Lee, Seok-Hee; Choi, Jang-Hee; Jeong, Sungho, E-mail: shjeong@gist.ac.kr

    2015-03-31

    Laser-induced breakdown spectroscopy (LIBS) is reported as a method for rapid quantitative analysis of elemental composition and depth profile of Cu(In,Ga)Se{sub 2} (CIGS) thin film. A calibration model considering compositional grading over depth was developed and verified with test samples. The results from eight test samples showed that the average concentration of Cu, In, Ga and Se could be predicted with a root mean square error of below 1% and a relative standard deviation of also below 1%. The depth profile of each constituent element of CIGS predicted by LIBS was close to those by Auger electron spectroscopy and secondary ion mass spectrometry. The average ablation depth per pulse during depth profiling was about 100 nm. - Highlights: • LIBS was adopted for quantitative analysis of CIGS thin film. • A calibration model considering compositional grading over depth was developed. • Concentration prediction of CIGS thin film was accurate and precise. • Quantitative depth profiling by LIBS was compared with those by AES and SIMS.

  5. Long-Wave Infrared (LWIR) Molecular Laser-Induced Breakdown Spectroscopy (LIBS) Emissions of Thin Solid Explosive Powder Films Deposited on Aluminum Substrates.

    Science.gov (United States)

    Yang, Clayton S-C; Jin, Feng; Trivedi, Sudhir B; Brown, Ei E; Hommerich, Uwe; Tripathi, Ashish; Samuels, Alan C

    2017-04-01

    Thin solid films made of high nitro (NO 2 )/nitrate (NO 3 ) content explosives were deposited on sand-blasted aluminum substrates and then studied using a mercury-cadmium-telluride (MCT) linear array detection system that is capable of rapidly capturing a broad spectrum of atomic and molecular laser-induced breakdown spectroscopy (LIBS) emissions in the long-wave infrared region (LWIR; ∼5.6-10 µm). Despite the similarities of their chemical compositions and structures, thin films of three commonly used explosives (RDX, HMX, and PETN) studied in this work can be rapidly identified in the ambient air by their molecular LIBS emission signatures in the LWIR region. A preliminary assessment of the detection limit for a thin film of RDX on aluminum appears to be much lower than 60 µg/cm 2 . This LWIR LIBS setup is capable of rapidly probing and charactering samples without the need for elaborate sample preparation and also offers the possibility of a simultaneous ultraviolet visible and LWIR LIBS measurement.

  6. Pulsed voltage deposited lead selenide thin film as efficient counter electrode for quantum-dot-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Bin Bin [Key Laboratory of Macromolecular Science of Shaanxi Province & School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062 (China); Department of Chemical Engineering, Institute of Chemical Industry, Shaanxi Institute of Technology, Xi’an 710300 (China); Wang, Ye Feng [Key Laboratory of Macromolecular Science of Shaanxi Province & School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062 (China); Wang, Xue Qing [Faculty of Chemical, Environmental and Biological Science and Technology, Dalian University of Technology, Dalian 116024 (China); Zeng, Jing Hui, E-mail: jhzeng@ustc.edu [Key Laboratory of Macromolecular Science of Shaanxi Province & School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062 (China)

    2016-04-30

    Highlights: • PbSe thin film is deposited on FTO glass by a pulse voltage electrodeposition method. • The thin film is used as counter electrode (CE) in quantum dot-sensitized solar cell. • Superior electrocatalytic activity and stability in the polysulfide electrolyte is received. • The narrow band gap characteristics and p-type conductivity enhances the cell efficiency. • An efficiency of 4.67% is received for the CdS/CdSe co-sensitized solar cells. - Abstract: Lead selenide (PbSe) thin films were deposited on fluorine doped tin oxide (FTO) glass by a facile one-step pulse voltage electrodeposition method, and used as counter electrode (CE) in CdS/CdSe quantum dot-sensitized solar cells (QDSSCs). A power conversion efficiency of 4.67% is received for the CdS/CdSe co-sensitized solar cells, which is much better than that of 2.39% received using Pt CEs. The enhanced performance is attributed to the extended absorption in the near infrared region, superior electrocatalytic activity and p-type conductivity with a reflection of the incident light at the back electrode in addition. The physical and chemical properties were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscopy (TEM), energy-dispersive spectroscopy (EDS), reflectance spectra, electrochemical impedance spectroscopy (EIS) and Tafel polarization measurements. The present work provides a facile pathway to an efficient CE in the QDSSCs.

  7. Stress-induced breakdown during galvanostatic anodising of zirconium

    International Nuclear Information System (INIS)

    Van Overmeere, Q.; Proost, J.

    2010-01-01

    Although internal stress is frequently being suggested as a plausible reason for oxide breakdown during valve metal anodising, no direct quantitative evidence has been made available yet. In this work, we anodized sputtered zirconium thin films galvanostatically at room temperature in sulphuric acid until breakdown was observed, and simultaneously measured the internal stress evolution in the oxide in situ, using a high-resolution curvature setup. It was found that the higher the magnitude of the observed internal compressive stress in the oxide, the smaller the oxide thickness at which breakdown occurred. The moment of breakdown was identified from a slope change in the cell voltage evolution, indicative for a decrease in anodising efficiency. The latter presumably occurs as a result of oxygen evolution, initiated by the relative increase of the cubic or tetragonal zirconia phase content relative to the monoclinic one. This was evidenced in turn by comparing electron diffractograms, taken in a transmission electron microscope, before and after breakdown. The critical role of internal stress on oxide breakdown during zirconium anodising can therefore be associated with its promoting effect on the densifying phase transformation of monoclinic oxide.

  8. Application of thin-film breakdown counters for characterization of neutron field of the VESUVIO instrument at the ISIS spallation source

    Energy Technology Data Exchange (ETDEWEB)

    Smirnov, A.N. [V.G. Khlopin Radium Institute, St. Petersburg (Russian Federation); Pietropaolo, A., E-mail: antonino.pietropaolo@roma2.infn.it [CNISM UdR Tor Vergata, and Centro NAST Roma, Italy Scientifica 1 I-00133 Roma Italy (Italy); Prokofiev, A.V. [The Svedberg Laboratory, Uppsala University, Uppsala (Sweden); Rodionova, E.E. [V.G. Khlopin Radium Institute, St. Petersburg (Russian Federation); Frost, C.D.; Ansell, S.; Schooneveld, E.M. [ISIS Facility, Rutherford Appleton Laboratory, Chilton (United Kingdom); Gorini, G. [Dipartimento di Fisica ' G. Occhialini,' Universita degli Studi di Milano-Bicocca, Milano (Italy)

    2012-09-21

    The high-energy neutron field of the VESUVIO instrument at the ISIS facility has been characterized using the technique of thin-film breakdown counters (TFBC). The technique utilizes neutron-induced fission reactions of {sup nat}U and {sup 209}Bi with detection of fission fragments by TFBCs. Experimentally determined count rates of the fragments are Almost-Equal-To 50% higher than those calculated using spectral neutron flux simulated with the MCNPX code. This work is a part of the project to develop ChipIr, a new dedicated facility for the accelerated testing of electronic components and systems for neutron-induced single event effects in the new Target Station 2 at ISIS. The TFBC technique has shown to be applicable for on-line monitoring of the neutron flux in the neutron energy range 1-800 MeV at the position of the device under test (DUT).

  9. Application of thin-film breakdown counters for characterization of neutron field of the VESUVIO instrument at the ISIS spallation source

    Science.gov (United States)

    Smirnov, A. N.; Pietropaolo, A.; Prokofiev, A. V.; Rodionova, E. E.; Frost, C. D.; Ansell, S.; Schooneveld, E. M.; Gorini, G.

    2012-09-01

    The high-energy neutron field of the VESUVIO instrument at the ISIS facility has been characterized using the technique of thin-film breakdown counters (TFBC). The technique utilizes neutron-induced fission reactions of natU and 209Bi with detection of fission fragments by TFBCs. Experimentally determined count rates of the fragments are ≈50% higher than those calculated using spectral neutron flux simulated with the MCNPX code. This work is a part of the project to develop ChipIr, a new dedicated facility for the accelerated testing of electronic components and systems for neutron-induced single event effects in the new Target Station 2 at ISIS. The TFBC technique has shown to be applicable for on-line monitoring of the neutron flux in the neutron energy range 1-800 MeV at the position of the device under test (DUT).

  10. Application of thin-film breakdown counters for characterization of neutron field of the VESUVIO instrument at the ISIS spallation source

    International Nuclear Information System (INIS)

    Smirnov, A.N.; Pietropaolo, A.; Prokofiev, A.V.; Rodionova, E.E.; Frost, C.D.; Ansell, S.; Schooneveld, E.M.; Gorini, G.

    2012-01-01

    The high-energy neutron field of the VESUVIO instrument at the ISIS facility has been characterized using the technique of thin-film breakdown counters (TFBC). The technique utilizes neutron-induced fission reactions of nat U and 209 Bi with detection of fission fragments by TFBCs. Experimentally determined count rates of the fragments are ≈50% higher than those calculated using spectral neutron flux simulated with the MCNPX code. This work is a part of the project to develop ChipIr, a new dedicated facility for the accelerated testing of electronic components and systems for neutron-induced single event effects in the new Target Station 2 at ISIS. The TFBC technique has shown to be applicable for on-line monitoring of the neutron flux in the neutron energy range 1–800 MeV at the position of the device under test (DUT).

  11. Frequency and voltage dependent electrical responses of poly(triarylamine thin film-based organic Schottky diode

    Directory of Open Access Journals (Sweden)

    Mohamad Khairul Anuar

    2017-01-01

    Full Text Available A metal-organic-metal (MOM type Schottky diode based on poly (triarylamine (PTAA thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f and capacitance-voltage (C-V-f characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit. Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz but decreases at high frequency (1 – 10 kHz. The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV−1cm−2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC signal.

  12. Towards low-voltage organic thin film transistors (OTFTs with solution-processed high-k dielectric and interface engineering

    Directory of Open Access Journals (Sweden)

    Yaorong Su

    2015-11-01

    Full Text Available Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs, the high operation voltage resulting from the low gate capacitance density of traditional SiO2 remains a severe limitation that hinders OTFTs'development in practical applications. In this regard, developing new materials with high-k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. Here, we introduce a simple solution-based technique to fabricate high-k metal oxide dielectric system (ATO at low-temperature, which can be used effectively to realize low-voltage operation of OTFTs. On the other hand, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. By optimizing the above two interfaces with octadecylphosphonic acid (ODPA self-assembled monolayer (SAM and properly modified low-cost Cu, obviously improved device performance is attained in our low-voltage OTFTs. Further more, organic electronic devices on flexible substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. Basing on the above results, outstanding electrical performance is achieved in flexible devices. Our studies demonstrate an effective way to realize low-voltage, high-performance OTFTs at low-cost.

  13. Frequency and voltage dependent electrical responses of poly(triarylamine) thin film-based organic Schottky diode

    Science.gov (United States)

    Anuar Mohamad, Khairul; Tak Hoh, Hang; Alias, Afishah; Ghosh, Bablu Kumar; Fukuda, Hisashi

    2017-11-01

    A metal-organic-metal (MOM) type Schottky diode based on poly (triarylamine) (PTAA) thin films has been fabricated by using the spin coating method. Investigation of the frequency dependent conductance-voltage (G-V-f) and capacitance-voltage (C-V-f) characteristics of the ITO/PTAA/Al MOM type diode were carried out in the frequency range from 12 Hz to 100 kHz using an LCR meter at room temperature. The frequency and bias voltage dependent electrical response were determined by admittance-based measured method in terms of an equivalent circuit model of the parallel combination of resistance and capacitance (RC circuit). Investigation revealed that the conductance is frequency and a bias voltage dependent in which conductance continuous increase as the increasing frequency, respectively. Meanwhile, the capacitance is dependent on frequency up to a certain value of frequency (100 Hz) but decreases at high frequency (1 - 10 kHz). The interface state density in the Schottky diode was determined from G-V and C-V characteristics. The interface state density has values almost constant of 2.8 x 1012 eV-1cm-2 with slightly decrease by increasing frequencies. Consequently, both series resistance and interface trap density were found to decrease with increasing frequency. The frequency dependence of the electrical responses is attributed the distribution density of interface states that could follow the alternating current (AC) signal.

  14. High-performance thin-film-transistors based on semiconducting-enriched single-walled carbon nanotubes processed by electrical-breakdown strategy

    Energy Technology Data Exchange (ETDEWEB)

    Aïssa, B., E-mail: aissab@emt.inrs.ca [Centre Énergie, Matériaux et Télécommunications, INRS, 1650, boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada); Qatar Environment and Energy Research Institute (QEERI), Qatar Foundation, P.O. Box 5825, Doha (Qatar); Nedil, M. [Telebec Wireless Underground Communication Laboratory, UQAT, 675, 1" è" r" e Avenue, Val d’Or, Québec J9P 1Y3 (Canada); Habib, M.A. [Computer Sciences and Engineering Department, Yanbu University College, P.O. Box 30031 (Saudi Arabia); Abdul-Hafidh, E.H. [High Energy Physics Department, Yanbu University College, P.O. Box 30031 (Saudi Arabia); Rosei, F. [Centre Énergie, Matériaux et Télécommunications, INRS, 1650, boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

    2015-02-15

    Highlights: • We selectively burn metallic single wall carbon nanotubes (SWCNT) by electrical breakdown. • We successfully achieve a semiconducting enriched-SWCNT in TFT configuration. • High performance, like On/Off of 10{sup 5} and a subthreshold swing of 165 mV/decades were obtained. • After PMMA coating, the SWCNT–TFTs were found stables for more than 4 months. - Abstract: Over the past two decades, among remarkable variety of nanomaterials, single-walled carbon nanotubes (SWCNTs) remain the most intriguing and uniquely well suited materials for applications in high-performance electronics. The most advanced technologies require the ability to form purely semiconducting SWCNTs. Here, we report on our strategy based on the well known progressive electrical breakdown process that offer this capability and serves as highly efficient means for selectively removing metallic carbon nanotubes from electronically heterogeneous random networks, deposited on silicon substrates in a thin film transistor (TFT) configuration. We demonstrate the successful achievement of semiconducting enriched-SWCNT networks in TFT scheme that reach On/Off switching ratios of ∼100,000, on-conductance of 20 μS, and a subthreshold swing of less than 165 mV/decades. The obtained TFT devices were then protected with thin film poly(methyl methacrylate) (PMMA) to keep the percolation level of the SWCNTs network spatially and temporally stable, while protecting it from atmosphere exchanges. TFT devices were found to be air-stable and maintained their excellent characteristics in ambient atmosphere for more than 4 months. This approach could work as a platform for future nanotube-based nanoelectronics.

  15. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

    International Nuclear Information System (INIS)

    Zhang, Hongliang; Wan, Qing; Wan, Changjin; Wu, Guodong; Zhu, Liqiang

    2013-01-01

    Tungsten oxide (WO x ) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10 −4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WO x -based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 10 6 , a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm 2 /V s was realized. Our results demonstrated that WO x -based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.

  16. Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Omveer, E-mail: poonia.omveer@gmail.com [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Dahiya, Raj P. [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Deenbandhu Chhotu Ram University of Science and Technology, Murthal – 131039 (India); Malik, Hitendra K.; Kumar, Parmod [Department of Physics, Indian Institute of Technology Delhi, New Delhi – 110016 (India)

    2015-08-28

    In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

  17. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Kavitha, A.; Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India); Subramanian, N. Sankara [Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India); Loganathan, S. [Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  18. Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production

    Directory of Open Access Journals (Sweden)

    F. Urbain

    2014-01-01

    Full Text Available Hydrogenated amorphous silicon thin film tandem solar cells (a-Si:H/a-Si:H have been developed with focus on high open-circuit voltages for the direct application as photocathodes in photoelectrochemical water splitting devices. By temperature variation during deposition of the intrinsic a-Si:H absorber layers the band gap energy of a-Si:H absorber layers, correlating with the hydrogen content of the material, can be adjusted and combined in a way that a-Si:H/a-Si:H tandem solar cells provide open-circuit voltages up to 1.87 V. The applicability of the tandem solar cells as photocathodes was investigated in a photoelectrochemical cell (PEC measurement set-up. With platinum as a catalyst, the a-Si:H/a-Si:H based photocathodes exhibit a high photocurrent onset potential of 1.76 V versus the reversible hydrogen electrode (RHE and a photocurrent of 5.3 mA/cm2 at 0 V versus RHE (under halogen lamp illumination. Our results provide evidence that a direct application of thin film silicon based photocathodes fulfills the main thermodynamic requirements to generate hydrogen. Furthermore, the presented approach may provide an efficient and low-cost route to solar hydrogen production.

  19. High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C.; Samnakay, R.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States); Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-02-14

    We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

  20. Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors

    KAUST Repository

    Park, Jihoon

    2016-11-29

    Multilayer channel structure is used to effectively manipulate the threshold voltage of zinc oxide transistors without degrading its field-effect mobility. Transistors operating in enhancement mode with good mobility are fabricated by optimizing the structure of the multilayer channel. The optimization is attributed to the formation of additional channel and suppression of the diffusion of absorbed water molecules and oxygen vacancies.

  1. Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors

    KAUST Repository

    Park, Jihoon; Alshammari, Fwzah Hamud; Wang, Zhenwei; Alshareef, Husam N.

    2016-01-01

    Multilayer channel structure is used to effectively manipulate the threshold voltage of zinc oxide transistors without degrading its field-effect mobility. Transistors operating in enhancement mode with good mobility are fabricated by optimizing the structure of the multilayer channel. The optimization is attributed to the formation of additional channel and suppression of the diffusion of absorbed water molecules and oxygen vacancies.

  2. Pressure and gap length dependence of gap breakdown voltage and discharge current of discharge-pumped KrF excimer laser. Hoden reiki KrF laser no zetsuen hakai den prime atsu to reiki denryu no atsuryoku, gap cho izon sei

    Energy Technology Data Exchange (ETDEWEB)

    Yukimura, K.; Kawakami, H. (Doshisha Univ., Tokyo (Japan)); Hitomi, K. (Kyoto Polytechnic College, Kyoto (Japan))

    1991-04-20

    On the gap destruction characteristics of UV-preionized discharge-pumped KrF excimer laser (charge transfer type) and the electric characteristics of the excited discharge, studies were made by changing the pressure (1.5-3 atm) and the discharge gap length (14-21 mm) of the discharge medium. (1) Gap breakdown voltage and the maximum current of the excited discharge give a similarity by a product of pressure and the gap length at the charge volatge. (2) Insulation breakdown of the gap occurs at the wave front of the applied voltage and the breakdown time gets delayed by the decreasing voltage applied. By setting the ionization index at constant value 20, the gap breakdown voltage is estimated at the error within 10%. (3) The relation between the maximum current, pressure and the gap length product changes the characteristics by the charge voltage of the primary condenser. With the result combined with the standardization of voltage/current of the excited discharge, the electric characteristics at the specific pressure and gap length can be readily known. 10 refs., 10 figs.

  3. Through thick and thin: tuning the threshold voltage in organic field-effect transistors.

    Science.gov (United States)

    Martínez Hardigree, Josué F; Katz, Howard E

    2014-04-15

    Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more

  4. Note: Measuring breakdown characteristics during the hot re-ignition of high intensity discharge lamps using high frequency alternating current voltage.

    Science.gov (United States)

    van den Bos, R A J M; Sobota, A; Manders, F; Kroesen, G M W

    2013-04-01

    To investigate the cold and hot re-ignition properties of High Intensity Discharge (HID) lamps in more detail an automated setup was designed in such a way that HID lamps of various sizes and under different background pressures can be tested. The HID lamps are ignited with a ramped sinusoidal voltage signal with frequencies between 60 and 220 kHz and with amplitude up to 7.5 kV. Some initial results of voltage and current measurements on a commercially available HID lamp during hot and cold re-ignition are presented.

  5. Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se2 thin films investigated by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Shin, R.H.; Jo, W.; Kim, D.W.; Yun, Jae Ho; Ahn, S.

    2011-01-01

    Electrical transport properties on polycrystalline Cu(In,Ga)Se 2 (CIGS) (Ga/(In+Ga) ∼35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

  6. Local current-voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se{sub 2} thin films investigated by conductive atomic force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Shin, R.H.; Jo, W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Kim, D.W. [Ewha Womans University, Department of Physics, Seoul (Korea, Republic of); Ewha Womans University, Department of Chemistry and Nanosciences, Seoul (Korea, Republic of); Yun, Jae Ho; Ahn, S. [Korea Institute of Energy Research, Daejeon (Korea, Republic of)

    2011-09-15

    Electrical transport properties on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) (Ga/(In+Ga) {approx}35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current-voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films. (orig.)

  7. Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

    International Nuclear Information System (INIS)

    Duan Bao-Xing; Yang Yin-Tang

    2012-01-01

    In this paper, two-dimensional electron gas (2DEG) regions in AlGaN/GaN high electron mobility transistors (HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time. A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge. The high electric field near the gate for the complete silicon doping structure is effectively decreased, which makes the surface electric field uniform. The high electric field peak near the drain results from the potential difference between the surface and the depletion regions. Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer. The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain. The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Influence of laser wavelength on the laser induced breakdown spectroscopy measurement of thin CuIn1−xGaxSe2 solar cell films

    International Nuclear Information System (INIS)

    Kim, Chan Kyu; In, Jung Hwan; Lee, Seok Hee; Jeong, Sungho

    2013-01-01

    Laser induced breakdown spectroscopy (LIBS) measurement of thin CuIn x Ga 1−x Se 2 (CIGS) films (1.2–1.9 μm) with varying Ga to In ratios was carried out using the fundamental (1064 nm) and second harmonic (532 nm) wavelength Nd:YAG lasers (τ = 5 ns, spot diameter = 150 μm, top-hat profile) in air. The concentration ratios of Ga to In, x Ga ≡ Ga/(Ga + In), of the CIGS samples ranged from 0.027 to 0.74 for which the band gap varied nearly proportionally to x Ga from 0.96 to 1.42. It was found that the LIBS signal of 1064 nm (1.17 eV) wavelength laser was significantly influenced by x Ga , whereas that of the 532 nm (2.34 eV) laser was consistent for all values of x Ga . The observed dependency of the LIBS signal intensity on the laser wavelength was attributed to the large difference of photon energy of the two wavelengths that changed the absorption of incident laser energy by the film. The 532 nm wavelength was found to be advantageous for multi-shot analysis that enabled depth profile analysis of the thin CIGS films and for improving measurement precision by averaging the multi-shot LIBS spectra. - Highlights: • The ablation characteristics of CIGS solar cell films change drastically with laser wavelength. • The LIBS signal intensity of 1064 nm wavelength laser depends strongly on Ga concentration. • Multi-shot LIBS analysis using a 532 nm laser is more advantageous for accuracy and consistency

  9. Influence of discharge voltage on the sensitivity of the resultant sputtered NiO thin films toward hydrogen gas

    Energy Technology Data Exchange (ETDEWEB)

    Khalaf, Mohammed K. [Center of Applied Physics, Directorate of Materials Research, Ministry of Science and Technology, Baghdad (Iraq); Mutlak, Rajaa H. [Dept. of Physics, College of Science, University of Baghdad, Ministry of Higher Education and Scientific Research, Baghdad (Iraq); Khudiar, Ausama I., E-mail: ausamaikhudiar@yahoo.com [Center of Applied Physics, Directorate of Materials Research, Ministry of Science and Technology, Baghdad (Iraq); Hial, Qahtan G. [Dept. of Physics, College of Science, University of Baghdad, Ministry of Higher Education and Scientific Research, Baghdad (Iraq)

    2017-06-01

    Nickel oxide thin films were deposited on glass substrates as the main gas sensor for H{sub 2} by the DC sputtering technique at various discharge voltages within the range of 1.8–2.5 kV. Their structural, optical and gas sensing properties were investigated by XRD, AFM, SEM, ultraviolet visible spectroscopy and home-made gas sensing measurement units. A diffraction peak in the direction of NiO (200) was observed for the sputtered films, thereby indicating that these films were polycrystalline in nature. The optical band gap of the films decreased from 3.8 to 3.5 eV when the thickness of the films was increased from 83.5 to 164.4 nm in relation to an increase in the sputtering discharge voltage from 1.8 to 2.5 kV, respectively. The gas sensitivity performance of the NiO films that were formed was studied and the electrical responses of the NiO-based sensors toward different H{sub 2} concentrations were also considered. The sensitivity of the gas sensor increased with the working temperature and H{sub 2} gas concentration. The thickness of the NiO thin films was also an important parameter in determining the properties of the NiO films as H{sub 2} sensors. It was shown in this study that NiO films have the capability to detect H{sub 2} concentrations below 3% in wet air, a feature that allows this material to be used directly for the monitoring of the environment.

  10. Effect of plasma voltage on sulfurization of α-MoO{sub 3} nanostructured thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Prabhat, E-mail: prabhat89k@gmail.com; Singh, Megha; Sharma, Rabindar K.; Reddy, G. B. [Thin Film Laboratory, Physics Department, Indian Institute of Technology Delhi, Hauz Khas, New Delhi-110016 (India)

    2016-05-06

    In this report, the effect of plasma voltage on plasma assisted sulfurization (PAS) of vertically aligned molybdenum trioxide (α- MoO{sub 3}) nanoflakes (NFs) on glass substrates has been studied systematically. MoO{sub 3} NFs were deposited using plasma assisted sublimation process. These nanoflakes were subjected to H{sub 2}S/Ar plasma at two different plasma voltages 600 and 1000 volts; to study the effect of plasma ionization on degree of sulfurization of MoO{sub 3} into MoS{sub 2}. XRD and Raman analysis show that film sulfurized at 1000 volts have relatively higher degree of conversion into MoS{sub 2}, as more intense peaks of MoS{sub 2} and MoO{sub 2} are obtained than that sulfurized at 600 volts. HRTEM of sulfurized film shows that outer surface of nanoflake has been converted into MoS{sub 2} (4-5 monolayers). Meanwhile, MoO{sub 3} was reduced into MoO{sub 2} as confirmed by XRD and Raman results. All the observed results are well in consonance with each other.

  11. Effect of Coercive Voltage and Charge Injection on Performance of a Ferroelectric-Gate Thin-Film Transistor

    Directory of Open Access Journals (Sweden)

    P. T. Tue

    2013-01-01

    Full Text Available We adopted a lanthanum oxide capping layer between semiconducting channel and insulator layers for fabrication of a ferroelectric-gate thin-film transistor memory (FGT which uses solution-processed indium-tin-oxide (ITO and lead-zirconium-titanate (PZT film as a channel layer and a gate insulator, respectively. Good transistor characteristics such as a high “on/off” current ratio, high channel mobility, and a large memory window of 108, 15.0 cm2 V−1 s−1, and 3.5 V were obtained, respectively. Further, a correlation between effective coercive voltage, charge injection effect, and FGT’s memory window was investigated. It is found that the charge injection from the channel to the insulator layer, which occurs at a high electric field, dramatically influences the memory window. The memory window’s enhancement can be explained by a dual effect of the capping layer: (1 a reduction of the charge injection and (2 an increase of effective coercive voltage dropped on the insulator.

  12. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

    Science.gov (United States)

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-05-09

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

  13. Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

    Science.gov (United States)

    Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

    2012-04-01

    The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (pentacene thin film transistor (μ: ~2 cm(2)/(V s), on/off ratio, >1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

  14. Remarkable reduction in the threshold voltage of pentacene-based thin film transistors with pentacene/CuPc sandwich configuration

    Directory of Open Access Journals (Sweden)

    Yi Li

    2014-06-01

    Full Text Available This study investigates the remarkable reduction in the threshold voltage (VT of pentacene-based thin film transistors with pentacene/copper phthalocyanine (CuPc sandwich configuration. This reduction is accompanied by increased mobility and lowered sub-threshold slope (S. Sandwich devices coated with a 5 nm layer of CuPc layer are compared with conventional top-contact devices, and results indicate that VT decreased significantly from −20.4 V to −0.2 V, that mobility increased from 0.18 cm2/Vs to 0.51 cm2/Vs, and that S was reduced from 4.1 V/dec to 2.9 V/dec. However, the on/off current ratio remains at 105. This enhanced performance could be attributed to the reduction in charge trap density by the incorporated CuPc layer. Results suggest that this method is simple and effectively generates pentacene-based organic thin film transistors with high mobility and low VT.

  15. Thin grain oriented electrical steel for PWM voltages fed magnetic cores

    Directory of Open Access Journals (Sweden)

    Thierry Belgrand

    2018-04-01

    Full Text Available This paper reports on performances of high permeability grain oriented electrical steel when used in association with power electronic switching devices. Loss measurement results obtained from the Epstein test, using sinusoidal or various PWM voltages in medium frequency range, show that for both studied thicknesses (HGO 0.23mm and HGO 0.18mm, comparing performances at a fixed induction level between the various situations may not be the most convenient method. The effect of magnetic domain refinement has been investigated. After having shown the interest of lowering the thickness, an alternative way of looking at losses is proposed that may help to design the magnetic core when it comes to the matter of reducing size in considering frequency and magnetization levels.

  16. Morphology and current-voltage characteristics of nanostructured pentacene thin films probed by atomic force microscopy.

    Science.gov (United States)

    Zorba, S; Le, Q T; Watkins, N J; Yan, L; Gao, Y

    2001-09-01

    Atomic force microscopy was used to study the growth modes (on SiO2, MoS2, and Au substrates) and the current-voltage (I-V) characteristics of organic semiconductor pentacene. Pentacene films grow on SiO2 substrate in a layer-by-layer manner with full coverage at an average thickness of 20 A and have the highest degree of molecular ordering with large dendritic grains among the pentacene films deposited on the three different substrates. Films grown on MoS2 substrate reveal two different growth modes, snowflake-like growth and granular growth, both of which seem to compete with each other. On the other hand, films deposited on Au substrate show granular structure for thinner coverages (no crystal structure) and dendritic growth for higher coverages (crystal structure). I-V measurements were performed with a platinum tip on a pentacene film deposited on a Au substrate. The I-V curves on pentacene film reveal symmetric tunneling type character. The field dependence of the current indicates that the main transport mechanism at high field intensities is hopping (Poole-Frenkel effect). From these measurements, we have estimated a field lowering coefficient of 9.77 x 10(-6) V-1/2 m1/2 and an ideality factor of 18 for pentacene.

  17. Low operating voltage InGaZnO thin-film transistors based on Al2O3 high-k dielectrics fabricated using pulsed laser deposition

    International Nuclear Information System (INIS)

    Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K.; Lee, W. J.; Shin, B. C.; Cho, C. R.

    2014-01-01

    Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al 2 O 3 dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al 2 O 3 and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al 2 O 3 gate dielectric exhibits a very low leakage current density of 1.3 x 10 -8 A/cm 2 at 5 V and a high capacitance density of 60.9 nF/cm 2 . The IGZO TFT with a structure of Ni/IGZO/Al 2 O 3 /Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm 2 V -1 s -1 , an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10 7 .

  18. Resistivity and Hall voltage in gold thin films deposited on mica at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Bahamondes, Sebastián; Donoso, Sebastián; Ibañez-Landeta, Antonio; Flores, Marcos [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Av. Blanco Encalada 2008, Santiago (Chile); Henriquez, Ricardo, E-mail: ricardo.henriquez@usm.cl [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Valparaiso 2390123 (Chile)

    2015-03-30

    Highlights: • We determined the 4 K thickness dependence of resistivity for a family of gold thin films. • We determined the thickness dependence of resistivity during the growth process. • Both behaviors are well represented by the Mayadas–Shatzkes theory. • We determined Hall tangent and Hall resistance at 4 K and up to 4.5 T. • Hall mobility is always higher than the drift mobility. - Abstract: We report the thickness dependence of the resistivity measured at 4 K of gold films grown onto mica at room temperature (RT), for thickness ranging from 8 to 100 nm. This dependence was compared to the one obtained for a sample during its growth process at RT. Both behaviors are well represented by the Mayadas–Shatzkes theory. Using this model, we found comparable contributions of electron surface and electron grain boundary scattering to the resistivity at 4 K. Hall effect measurements were performed using a variable transverse magnetic field up to 4.5 T. Hall tangent and Hall resistance exhibit a linear dependence on the magnetic field. For this magnetic field range, the Hall mobility is always larger than the drift mobility. This result is explained through the presence of the above-mentioned scattering mechanisms acting on the galvanomagnetic coefficients. In addition, we report the temperature dependence of the resistivity between 4 and 70 K.

  19. Electrospraying and ultraviolet light curing of nanometer-thin polydimethylsiloxane membranes for low-voltage dielectric elastomer transducers

    Science.gov (United States)

    Osmani, Bekim; Töpper, Tino; Siketanc, Matej; Kovacs, Gabor M.; Müller, Bert

    2017-04-01

    Dielectric elastomer transducers (DETs) have attracted interest as actuators, sensors, and even as self-sensing actuators for applications in medicine, soft robotics, and microfluidics. To reach strains of more than 10 %, they currently require operating voltages of several hundred volts. In medical applications for artificial muscles, however, their operation is limited to a very few tens of volts, which implies high permittivity materials and thin-film structures. Such micro- or nanostructures can be prepared using electro-spraying, a cost-effective technique that allows upscaling using multiple nozzles for the fabrication of silicone films down to nanometer thickness. Deposition rates of several micrometers per hour have already been reached. It has been recently demonstrated that such membranes can be fabricated by electro-spraying and subsequent ultraviolet light irradiation. Herein, we introduce a relatively fast deposition of a dimethyl silicone copolymer fluid that contains mercaptopropyl side chains in addition to the methyl groups. Its elastic modulus was tuned with the irradiation dose of the 200 W Hg-Xe lamp. We also investigated the formation of elastomer films, using polymer concentrations in ethyl acetate of 1, 2, 5 and 10 vol%. After curing, the surface roughness was measured by means of atomic force microscopy. This instrument also enabled us to determine the average elastic modulus out of, for example, 400 nanoindentation measurements, using a spherical tip with a radius of 500 nm. The elastomer films were cured for a period of less than one minute, a speed that makes it feasible to combine electro-spraying and in situ curing in a single process step for fabricating low-voltage, multilayer DETs.

  20. Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

    Science.gov (United States)

    Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli

    2015-01-01

    We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

  1. Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

    Science.gov (United States)

    Yoon, Myung-Han

    Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on

  2. Low-voltage organic thin film transistors (OTFTs) using crosslinked polyvinyl alcohol (PVA)/neodymium oxide (Nd2O3) bilayer gate dielectrics

    Science.gov (United States)

    Khound, Sagarika; Sarma, Ranjit

    2018-01-01

    We have reported here on the design, processing and dielectric properties of pentacene-based organic thin film transitors (OTFTs) with a bilayer gate dilectrics of crosslinked PVA/Nd2O3 which enables low-voltage organic thin film operations. The dielectric characteristics of PVA/Nd2O3 bilayer films are studied by capacitance-voltage ( C- V) and current-voltage ( I- V) curves in the metal-insulator-metal (MIM) structure. We have analysed the output electrical responses and transfer characteristics of the OTFT devices to determine their performance of OTFT parameters. The mobility of 0.94 cm2/Vs, the threshold voltage of - 2.8 V, the current on-off ratio of 6.2 × 105, the subthreshold slope of 0.61 V/decade are evaluated. Low leakage current of the device is observed from current density-electric field ( J- E) curve. The structure and the morphology of the device are studied using X-ray diffraction (XRD) and atomic force microscope (AFM), respectively. The study demonstrates an effective way to realize low-voltage, high-performance OTFTs at low cost.

  3. Thin film organic photodetectors for indirect X-ray detection demonstrating low dose rate sensitivity at low voltage operation

    Energy Technology Data Exchange (ETDEWEB)

    Starkenburg, Daken J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA; Johns, Paul M. [Nuclear Engineering Program, University of Florida, Gainesville, Florida 32611, USA; Detection Systems Group, Pacific Northwest National Laboratory, Richland, Washington 99354, USA; Baciak, James E. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA; Nuclear Engineering Program, University of Florida, Gainesville, Florida 32611, USA; Nino, Juan C. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA; Xue, Jiangeng [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

    2017-12-14

    Developments in the field of organic semiconductors have generated organic photodetectors with high quantum efficiency, wide spectral sensitivity, low power consumption, and unique form factors that are flexible and conformable to their substrate shape. In this work, organic photodetectors coupled with inorganic CsI(Tl) scintillators are used to showcase the low dose rate sensitivity that is enabled when high performance organic photodetectors and scintillator crystals are integrated. The detection capability of these organic-inorganic coupled systems to high energy radiation highlights their potential as an alternative to traditional photomultiplier tubes for nuclear spectroscopy applications. When exposed to Bremsstrahlung radiation produced from an X-ray generator, SubPc:C60, AlPcCl:C70, and P3HT:PC61BM thin film photodetectors with active layer thicknesses less than 100 nm show detection of incident radiation at low and no applied bias. Remarkably low dose rates, down to at least 0.28 µGy/s, were detectable with a characteristic linear relationship between exposure rate and photodetector current output. These devices also demonstrate sensitivities as high as 5.37 mC Gy-1 cm-2 when coupled to CsI(Tl). Additionally, as the tube voltage across the X-ray generator was varied, these organic-inorganic systems showed their ability to detect a range of continuous radiation spectra spanning several hundred keV.

  4. Thin film organic photodetectors for indirect X-ray detection demonstrating low dose rate sensitivity at low voltage operation

    Science.gov (United States)

    Starkenburg, Daken J.; Johns, Paul M.; Baciak, James E.; Nino, Juan C.; Xue, Jiangeng

    2017-12-01

    Developments in the field of organic semiconductors have generated organic photodetectors with high quantum efficiency, wide spectral sensitivity, low power consumption, and unique form factors that are flexible and conformable to their substrate shape. In this work, organic photodetectors coupled with inorganic CsI(Tl) scintillators are used to showcase the low dose rate sensitivity that is enabled when high performance organic photodetectors and scintillator crystals are integrated. The detection capability of these organic-inorganic coupled systems to high energy radiation highlights their potential as an alternative to traditional photomultiplier tubes for nuclear spectroscopy applications. When exposed to Bremsstrahlung radiation produced from an X-ray generator, SubPc:C60, AlPcCl:C70, and P3HT:PC61BM thin film photodetectors with active layer thicknesses less than 100 nm show detection of incident radiation at low and no applied bias. Remarkably low dose rates, down to at least 0.18 μGy/s, were detectable with a characteristic linear relationship between exposure rate and photodetector current output. These devices also demonstrate sensitivities as high as 5.37 mC Gy-1 cm-2 when coupled to CsI(Tl). Additionally, as the tube voltage across the X-ray generator was varied, these organic-inorganic systems showed their ability to detect a range of continuous radiation spectra spanning several hundred keV.

  5. Gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors with an asymmetric graphene electrode

    Directory of Open Access Journals (Sweden)

    Joonwoo Kim

    2015-09-01

    Full Text Available The gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs having an asymmetric graphene electrode structure are studied. A large positive shift in the threshold voltage, which is well fitted to a stretched-exponential equation, and an increase in the subthreshold slope are observed when drain current stress is applied. This is due to an increase in temperature caused by power dissipation in the graphene/a-IGZO contact region, in addition to the channel region, which is different from the behavior in a-IGZO TFTs with a conventional transparent electrode.

  6. Dielectric breakdown in liquid helium

    International Nuclear Information System (INIS)

    Miller, F.L. Jr.

    1975-01-01

    The experimental apparatus consists of a 130 kV dc 80 kV ac intermediate voltage unit and a 600 kV dc 700 kV high voltage unit under construction. The experimental devices consist of an insulated container, or dewar, in which two electrodes are placed, one above the other. A voltage is built up in one electrode until an arc occurs to the other electrode. A typical set of breakdown data is shown. A mathematical analysis is briefly described. (MOW)

  7. Technological Aspects: High Voltage

    International Nuclear Information System (INIS)

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered. (author)

  8. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D.C.

    2013-12-16

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  9. Breakdown characteristics of xenon HID Lamps

    Science.gov (United States)

    Babaeva, Natalia; Sato, Ayumu; Brates, Nanu; Noro, Koji; Kushner, Mark

    2009-10-01

    The breakdown characteristics of mercury free xenon high intensity discharge (HID) lamps exhibit a large statistical time lag often having a large scatter in breakdown voltages. In this paper, we report on results from a computational investigation of the processes which determine the ignition voltages for positive and negative pulses in commercial HID lamps having fill pressures of up to 20 atm. Steep voltage rise results in higher avalanche electron densities and earlier breakdown times. Circuit characteristics also play a role. Large ballast resistors may limit current to the degree that breakdown is quenched. The breakdown voltage critically depends on cathode charge injection by electric field emission (or other mechanisms) which in large part controls the statistical time lag for breakdown. For symmetric lamps, ionization waves (IWs) simultaneously develop from the bottom and top electrodes. Breakdown typically occurs when the top and bottom IWs converge. Condensed salt layers having small conductivities on the inner walls of HID lamps and on the electrodes can influence the ignition behavior. With these layers, IWs tend to propagate along the inner wall and exhibit a different structure depending on the polarity.

  10. Breakdown in ZnO Varistors by High Power Electrical Pulses; TOPICAL

    International Nuclear Information System (INIS)

    PIKE, GORDON E.

    2001-01-01

    This report documents an investigation of irreversible electrical breakdown in ZnO varistors due to short pulses of high electric field and current density. For those varistors that suffer breakdown, there is a monotonic, pulse-by-pulse degradation in the switching electric field. The electrical and structural characteristics of varistors during and after breakdown are described qualitatively and quantitatively. Once breakdown is nucleated, the degradation typically follows a well-defined relationship between the number of post-initiation pulses and the degraded switching voltage. In some cases the degraded varistor has a remnant 20(micro)m diameter hollow track showing strong evidence of once-molten ZnO. A model is developed for both electrical and thermal effects during high energy pulsing. The breakdown is assumed to start at one electrode and advance towards the other electrode as a thin filament of conductive material that grows incrementally with each successive pulse. The model is partially validated by experiments in which the varistor rod is cut at several different lengths from the electrode. Invariably one section of the cut varistor has a switching field that is not degraded while the other section(s) are heavily degraded. Based on the experiments and models of behavior during breakdown, some speculations about the nature of the nucleating mechanism are offered in the last section

  11. Junction depth dependence of breakdown in silicon detector diodes

    International Nuclear Information System (INIS)

    Beck, G.A.; Carter, A.A.; Carter, J.R.; Greenwood, N.M.; Lucas, A.D.; Munday, D.J.; Pritchard, T.W.; Robinson, D.; Wilburn, C.D.; Wyllie, K.

    1996-01-01

    The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction.We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage,in reasonable agreement with previous studies of junction breakdown. (orig.)

  12. Self-assembled monolayer exchange reactions as a tool for channel interface engineering in low-voltage organic thin-film transistors.

    Science.gov (United States)

    Lenz, Thomas; Schmaltz, Thomas; Novak, Michael; Halik, Marcus

    2012-10-02

    In this work, we compared the kinetics of monolayer self-assembly long-chained carboxylic acids and phosphonic acids on thin aluminum oxide surfaces and investigated their dielectric properties in capacitors and low-voltage organic thin-film transistors. Phosphonic acid anchor groups tend to substitute carboxylic acid molecules on aluminum oxide surfaces and thus allow the formation of mixed or fully exchanged monolayers. With different alkyl chain substituents (n-alkyl or fluorinated alkyl chains), the exchange reaction can be monitored as a function of time by static contact angle measurements. The threshold voltage in α,α'-dihexyl-sexithiophene thin-film transistors composed of such mixed layer dielectrics correlates with the exchange progress and can be tuned from negative to positive values or vice versa depending on the dipole moment of the alkyl chain substituents. The change in the dipole moment with increasing exchange time also shifts the capacitance of these devices. The rate constants for exchange reactions determined by the time-dependent shift of static contact angle, threshold voltage, and capacitance exhibit virtually the same value thus proving the exchange kinetics to be highly controllable. In general, the exchange approach is a powerful tool in interface engineering, displaying a great potential for tailoring of device characteristics.

  13. High-conductance low-voltage organic thin film transistor with locally rearranged poly(3-hexylthiophene) domain by current annealing on plastic substrate

    Science.gov (United States)

    Pei, Zingway; Tsai, Hsing-Wang; Lai, Hsin-Cheng

    2016-02-01

    The organic material based thin film transistors (TFTs) are attractive for flexible optoelectronics applications due to the ability of lager area fabrication by solution and low temperature process on plastic substrate. Recently, the research of organic TFT focus on low operation voltage and high output current to achieve a low power organic logic circuit for optoelectronic device,such as e-paper or OLED displayer. To obtain low voltage and high output current, high gate capacitance and high channel mobility are key factors. The well-arranged polymer chain by a high temperature postannealing, leading enhancement conductivity of polymer film was a general method. However, the thermal annealing applying heat for all device on the substrate and may not applicable to plastic substrate. Therefore, in this work, the low operation voltage and high output current of polymer TFTs was demonstrated by locally electrical bias annealing. The poly(styrene-comethyl methacrylate) (PS-r-PMMA) with ultra-thin thickness is used as gate dielectric that the thickness is controlled by thermal treatment after spin coated on organic electrode. In electrical bias-annealing process, the PS-r- PMMA is acted a heating layer. After electrical bias-annealing, the polymer TFTs obtain high channel mobility at low voltage that lead high output current by a locally annealing of P3HT film. In the future, the locally electrical biasannealing method could be applied on plastic substrate for flexible optoelectronic application.

  14. Breakdown of highly excited oxygen in a DC electric field

    International Nuclear Information System (INIS)

    Vagin, N.P.; Ionin, A.A.; Klimachev, Yu.M.; Sinitsin, D.V.; Yuryshev, N.N.; Deryugin, A.A.; Kochetov, I.V.; Napartovich, A.P.

    2000-01-01

    The breakdown of oxygen in a dc electric field is studied. A high concentration of oxygen molecules in the a 1 Δ g excited state is obtained in a purely chemical reactor. A decrease in the breakdown voltage at degrees of excitation exceeding 50% is observed. The theoretical decrement in the breakdown voltage obtained by solving the Boltzmann equation is in good agreement with the experimental data

  15. Effect of localized states on the current-voltage characteristics of metal-semiconductor contacts with thin interfacial layer

    Science.gov (United States)

    Chattopadhyay, P.

    1994-10-01

    The role of discrete localized states on the current-voltage characteristics of metal-semiconductor contact is examined. It is seen that, because of these localized states, the logarithmic current vs voltage characteristics become nonlinear. Such nonlinearity is found sensitive to the temperature, and the energy and density of the localized states. The predicted temperature dependence of barrier height and the current-voltage characteristics are in agreement with the experimental results of Aboelfotoh [ Phys. Rev. B39, 5070 (1989)].

  16. Interface engineering in high-performance low-voltage organic thin-film transistors based on 2,7-dialkyl-[1]benzothieno[3,2-b][1]benzothiophenes.

    Science.gov (United States)

    Amin, Atefeh Y; Reuter, Knud; Meyer-Friedrichsen, Timo; Halik, Marcus

    2011-12-20

    We investigated two different (2,7-dialkyl-[1]benzothieno[3,2-b][1]benzothiophenes; C(n)-BTBT-C(n), where n = 12 or 13) semiconductors in low-voltage operating thin-film transistors. By choosing functional molecules in nanoscaled hybrid dielectric layers, we were able to tune the surface energy and improve device characteristics, such as leakage current and hysteresis. The dipolar nature of the self-assembled molecules led to a shift in the threshold voltage. All devices exhibited high charge carrier mobilities of 0.6-7.0 cm(2) V(-1) s(-1). The thin-film morphology of BTBT was studied by means of atomic force microscopy (AFM), presented a dependency upon the surface energy of the self-assembled monolayer (SAM) hybrid dielectrics but not upon the device performance. The use of C(13)-BTBT-C(13) on hybrid dielectrics of AlO(x) and a F(15)C(18)-phosphonic acid monolayer led to devices with a hole mobility of 1.9 cm(2) V(-1) s(-1) at 3 V, on/off ratio of 10(5), small device-device variation of mobility, and a threshold voltage of only -0.9 V, thus providing excellent characteristics for further integration. © 2011 American Chemical Society

  17. Effects of controlling the interface trap densities in InGaZnO thin-film transistors on their threshold voltage shifts

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, S-W.; Lee, J-T.; Roh, Y. [Sungkyunkwan University, Suwon (Korea, Republic of)

    2014-12-15

    In this paper, the threshold voltage stability characteristics of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) are discussed. The IGZO TFTs were found to induce a parallel threshold voltage (V{sub th}) shift with changing field effect mobility (μ{sub FE}) or a sub-threshold gate voltage swing (SS) due to various thermal annealing conditions. The IGZO TFT that was post-annealed in an O{sub 2} ambient was found to be more stable for use in oxide-based TFT devices and to have better performance characteristics, such as the on/off current ratio (I{sub on/off} ), SS, and V{sub th}, than other TFTs did. The mechanism for improving the V{sub th} stability in the post-annealed IGZO TFT is a decrease in the number of trap sites for the electrons and the weak oxygen bonding in the IGZO thin films. The device's performance could be significantly affected by adjusting the annealing conditions. This mechanism is closely related to that of modulation annealing, where the number of localized trapped carriers and defect centers at the interface or in the channel layer are reduced.

  18. Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

    KAUST Repository

    Petti, Luisa

    2017-03-17

    We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V−1 s−1 and 0.013 cm2 V−1 s−1, respectively, current on/off ratio in the range 102–104, and maximum operating voltages between −3.5 and −10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as −3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

  19. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    Energy Technology Data Exchange (ETDEWEB)

    Niang, K. M.; Flewitt, A. J., E-mail: ajf@eng.cam.ac.uk [Electrical Engineering Division, Cambridge University, J J Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Barquinha, P. M. C.; Martins, R. F. P. [i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica (Portugal); Cobb, B. [Holst Centre/TNO, High Tech Campus 31, 5656AE Eindhoven (Netherlands); Powell, M. J. [252, Valley Drive, Kendal LA9 7SL (United Kingdom)

    2016-02-29

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analysed using the thermalization energy concept. The peak energy barrier to defect conversion is extracted to be 0.75 eV and the attempt-to-escape frequency is extracted to be 10{sup 7} s{sup −1}. These values are in remarkable agreement with measurements in a-IGZO TFTs under negative gate bias illumination stress (NBIS) reported recently (Flewitt and Powell, J. Appl. Phys. 115, 134501 (2014)). This suggests that the same physical process is responsible for both PBS and NBIS, and supports the oxygen vacancy defect migration model that the authors have previously proposed.

  20. Degradation of Ultra-Thin Gate Oxide NMOSFETs under CVDT and SHE Stresses

    International Nuclear Information System (INIS)

    Shi-Gang, Hu; Yan-Rong, Cao; Yue, Hao; Xiao-Hua, Ma; Chi, Chen; Xiao-Feng, Wu; Qing-Jun, Zhou

    2008-01-01

    Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT) stresses are studied using NMOSFET with 1.4-nm gate oxides. The degradation of device parameters and the degradation of the stress induced leakage current (SILC) under these two stresses are reported. The emphasis of this paper is on SILC and breakdown of ultra-thin-gate-oxide under these two stresses. SILC increases with stress time and several soft breakdown events occur during direct-tunnelling (DT) stress. During SHE stress, SILC firstly decreases with stress time and suddenly jumps to a high level, and no soft breakdown event is observed. For DT injection, the positive hole trapped in the oxide and hole direct-tunnelling play important roles in the breakdown. For SHE injection, it is because injected hot electrons accelerate the formation of defects and these defects formed by hot electrons induce breakdown. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  1. Surface breakdown igniter for mercury arc devices

    Science.gov (United States)

    Bayless, John R.

    1977-01-01

    Surface breakdown igniter comprises a semiconductor of medium resistivity which has the arc device cathode as one electrode and has an igniter anode electrode so that when voltage is applied between the electrodes a spark is generated when electrical breakdown occurs over the surface of the semiconductor. The geometry of the igniter anode and cathode electrodes causes the igniter discharge to be forced away from the semiconductor surface.

  2. Electrical strength of vacuum gap at repetitive breakdown

    International Nuclear Information System (INIS)

    Dubinin, N.P.; Chistyakov, N.P.

    1983-01-01

    The investigation of repetitive pulse breakdown of vacuum space, which electrodes have been subjected to various treatment in vacuum and inert gas, is carried out. In case of electrode warm-up in vacuum up to 400 deg C as well as electronic heating up to 900 deg C the voltage in case of repetitive breakdown hasncreased approximately twice and in case of a through treatment, which is accomplished by a high-current glow discharge in inert gas, the maximum high voltage in case of the first breakdown at repetitive breakdown has decreased by 30...40%, remaining 2-3 times higher than in the first case

  3. Electrical breakdown phenomena of dielectric elastomers

    DEFF Research Database (Denmark)

    Mateiu, Ramona Valentina; Yu, Liyun; Skov, Anne Ladegaard

    2017-01-01

    Silicone elastomers have been heavily investigated as candidates for dielectric elastomers and are as such almost ideal candidates with their inherent softness and compliance but they suffer from low dielectric permittivity. This shortcoming has been sought optimized by many means during recent...... years. However, optimization with respect to the dielectric permittivity solely may lead to other problematic phenomena such as premature electrical breakdown. In this work, we investigate the electrical breakdown phenomena of various types of permittivity-enhanced silicone elastomers. Two types...... of silicone elastomers are investigated and different types of breakdown are discussed. Furthermore the use of voltage stabilizers in silicone-based dielectric elastomers is investigated and discussed....

  4. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  5. Applications of ultra-short pulsed laser ablation: thin films deposition and fs/ns dual-pulse laser-induced breakdown spectroscopy

    International Nuclear Information System (INIS)

    Teghil, R; De Bonis, A; Galasso, A; Santagata, A; Albano, G; Villani, P; Spera, D; Parisi, G P

    2008-01-01

    In this paper, we report a survey of two of the large number of possible practical applications of the laser ablation performed by an ultra-short pulse laser, namely pulsed laser deposition (PLD) and fs/ns dual-pulse laser-induced breakdown spectroscopy (DP-LIBS). These applications differ from those using just longer pulsed lasers as a consequence of the distinctive characteristics of the plasma produced by ultra-short laser beams. The most important feature of this plasma is the large presence of particles with nanometric size which plays a fundamental role in both applications.

  6. Some device implications of voltage controlled magnetic anisotropy in Co/Gd2O3 thin films through REDOX chemistry

    Science.gov (United States)

    Hao, Guanhua; Noviasky, Nicholas; Cao, Shi; Sabirianov, Ildar; Yin, Yuewei; Ilie, Carolina C.; Kirianov, Eugene; Sharma, Nishtha; Sokolov, Andrei; Marshall, Andrew; Xu, Xiaoshan; Dowben, Peter A.

    2018-04-01

    The effect of intermediate interfacial oxidation on the in-plane magnetization of multilayer stack Pt/Co/Gd2O3, on a p-type silicon substrate, has been investigated by magneto-optical Kerr effect (MOKE) measurements, the anomalous Hall effect, and magnetoresistance measurements. While voltage controlled perpendicular magnetic anisotropy of a metal/oxide heterostructure is known, this heterostructure displays an inverse relationship between voltage and coercivity. The anomalous Hall effect demonstrates a significant change in hysteresis, with the applied bias sign. There is a higher perpendicular magnetic anisotropy with positive bias exposure.

  7. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high- k metal gate NMOSFET with kMC TDDB simulations

    International Nuclear Information System (INIS)

    Xu Hao; Yang Hong; Luo Wei-Chun; Xu Ye-Feng; Wang Yan-Rong; Tang Bo; Wang Wen-Wu; Qi Lu-Wei; Li Jun-Feng; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2016-01-01

    The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high- k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it / N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. (paper)

  8. Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

    Science.gov (United States)

    Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

    2017-10-01

    A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

  9. Electrical breakdown studies with Mycalex insulators

    International Nuclear Information System (INIS)

    Waldron, W.; Greenway, W.; Eylon, S.; Henestroza, E.; Yu, S.

    2003-01-01

    Insulating materials such as alumina and glass-bonded mica (Mycalex) are used in accelerator systems for high voltage feedthroughs, structural supports, and barriers between high voltage insulating oil and the vacuum beam pipe in induction accelerator cells. Electric fields in the triple points should be minimized to prevent voltage breakdown. Mechanical stress can compromise seals and result in oil contamination of the insulator surface. We have tested various insulator cleaning procedures including ultrasonic cleaning with a variety of aqueous-based detergents, and manual scrubbing with various detergents. Water sheeting tests were used to determine the initial results of the cleaning methods. Ultimately, voltage breakdown tests will be used to quantify the benefits of these cleaning procedures

  10. Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

    NARCIS (Netherlands)

    Cillessen, J.F.M.; Prins, M.W.J.; Wolf, R.M.

    1997-01-01

    Thin-film ferroelectric capacitors consisting of PbZr0.53Ti0.47O3 sandwiched between La0.5Sr0.5CoO3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field (Ec) which is comparable with values for

  11. Low-pressure gas breakdown in longitudinal combined electric fields

    International Nuclear Information System (INIS)

    Lisovskiy, V A; Kharchenko, N D; Yegorenkov, V D

    2010-01-01

    This paper contains the complete experimental and analytical picture of gas breakdown in combined electric fields for arbitrary values of rf and dc fields. To obtain it, we continued the study of the discharge ignition modes in nitrogen with simultaneous application of dc and rf electric fields presented in Lisovskiy et al (2008 J. Phys. D: Appl. Phys. 41 125207). To this end, we studied the effect of rf voltage on dc discharge ignition. When we applied an rf voltage exceeding the one corresponding to the minimum breakdown voltage of a self-sustained rf discharge, the curve of dependence of the dc breakdown voltage of a combined discharge on gas pressure was found to consist of two sections. We got the generalized gas breakdown criterion in the combined field valid for arbitrary values of rf and dc electric fields. The calculation results agree with experimental data satisfactorily.

  12. Enhancement of dielectric breakdown strengths in polymer film capacitors

    International Nuclear Information System (INIS)

    Binder, M.; Mammone, R.J.; Lavene, B.; Rondeau, E.

    1992-01-01

    This paper reports that breakdown voltages of wound, polymer film/metal foil capacitors have been dramatically increased by briefly exposing them (after they had been spirally wound) to a low pressure, low temperature gas plasma. Exposure of wound, polycarbonate-based capacitors to a 96%CF 4 /4%O 2 gas plasma for 4 minutes, for example, produced a 200% increase in breakdown voltage

  13. AC BREAKDOWN IN GASES

    Science.gov (United States)

    electron- emission (multipactor) region, and (3) the low-frequency region. The breakdown mechanism in each of these regions is explained. An extensive bibliography on AC breakdown in gases is included.

  14. Visible photoenhanced current-voltage characteristics of Au : TiO2 nanocomposite thin films as photoanodes

    International Nuclear Information System (INIS)

    Naseri, N; Amiri, M; Moshfegh, A Z

    2010-01-01

    In this investigation, the effect of annealing temperature and concentration of gold nanoparticles on the photoelectrochemical properties of sol-gel deposited Au : TiO 2 nanocomposite thin films is studied. Various gold concentrations have been added to the TiO 2 thin films and their properties are compared. All the deposited samples are annealed at different temperatures. The optical density spectra of the films show the formation of gold nanoparticles in the films. The optical bandgap energy of the Au : TiO 2 films decreases with increasing Au concentration. The crystalline structure of the nanocomposite films is studied by x-ray diffractometry indicating the formation of gold nanocrystals in the anatase TiO 2 nanocrystalline thin films. X-ray photoelectron spectroscopy reveals that the presence of gold in the metallic state and the formation of TiO 2 are stoichiometric. The photoelectrochemical properties of the Au : TiO 2 samples are characterized using a compartment cell containing H 2 SO 4 and KOH as cathodic and anodic electrolytes, respectively. It is found that the addition of Au nanoparticles in TiO 2 films enhances the photoresponse of the layer and the addition of gold nanocrystals with an optimum value of 5 mol% resulted in the highest photoelectrochemical activity. Moreover, the photoresponse of the samples is also enhanced with an increase in the annealing temperature.

  15. Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices

    Science.gov (United States)

    Im, Jaemo; Auciello, O.; Baumann, P. K.; Streiffer, S. K.; Kaufman, D. Y.; Krauss, A. R.

    2000-01-01

    Precise control of composition and microstructure is critical for the production of (BaxSr1-x)Ti1+yO3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba0.5Sr0.5TiO3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O2) process pressure, while the O2/Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications.

  16. Composition-control of magnetron-sputter-deposited (BaxSr1-x)Ti1+yO3+z thin films for voltage tunable devices

    International Nuclear Information System (INIS)

    Im, Jaemo; Auciello, O.; Baumann, P. K.; Streiffer, S. K.; Kaufman, D. Y.; Krauss, A. R.

    2000-01-01

    Precise control of composition and microstructure is critical for the production of (Ba x Sr 1-x )Ti 1+y O 3+z (BST) dielectric thin films with the large dependence of permittivity on electric field, low losses, and high electrical breakdown fields that are required for successful integration of BST into tunable high-frequency devices. Here, we present results on composition-microstructure-electrical property relationships for polycrystalline BST films produced by magnetron-sputter deposition, that are appropriate for microwave and millimeter-wave applications such as varactors and frequency triplers. Films with controlled compositions were grown from a stoichiometric Ba 0.5 Sr 0.5 TiO 3 target by control of the background processing gas pressure. It was determined that the (Ba+Sr)/Ti ratios of these BST films could be adjusted from 0.73 to 0.98 by changing the total (Ar+O 2 ) process pressure, while the O 2 /Ar ratio did not strongly affect the metal ion composition. Film crystalline structure and dielectric properties as a function of the (Ba+Sr)/Ti ratio are discussed. Optimized BST films yielded capacitors with low dielectric losses (0.0047), among the best reported for sputtered BST, while still maintaining tunabilities suitable for device applications. (c) 2000 American Institute of Physics

  17. Control of the threshold voltage by using the oxygen partial pressure in sputter-deposited InGaZnO4 thin-film transistors

    International Nuclear Information System (INIS)

    Ahn, Jeung Sun; Lee, Kwang Bae

    2012-01-01

    We investigate the controllability of the threshold voltage (V th ) by varying the O 2 partial pressure in sputter-deposited of InGaZnO 4 thin-film transistors (IGZO TFTs). We showed that the V th values could be linearly controlled from a depletion-type of V th ∼ -6 V to an enhancement-type of V th ∼ 2 V, without any abrupt change in μ sat , I on/off , and S, by only changing the O 2 partial pressure in a fixed region of the Ar partial pressure. Such V th controllability is thought to be due to the proper reduction of defect states and, in turn, to the preservation of high-performance TFT behavior.

  18. A complementary organic inverter of porphyrazine thin films: low-voltage operation using ionic liquid gate dielectrics.

    Science.gov (United States)

    Fujimoto, Takuya; Miyoshi, Yasuhito; Matsushita, Michio M; Awaga, Kunio

    2011-05-28

    We studied a complementary organic inverter consisting of a p-type semiconductor, metal-free phthalocyanine (H(2)Pc), and an n-type semiconductor, tetrakis(thiadiazole)porphyrazine (H(2)TTDPz), operated through the ionic-liquid gate dielectrics of N,N-diethyl-N-methyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide (DEME-TFSI). This organic inverter exhibits high performance with a very low operation voltage below 1.0 V and a dynamic response up to 20 Hz. © The Royal Society of Chemistry 2011

  19. On the assessment of extremely low breakdown probabilities by an inverse sampling procedure [gaseous insulation

    DEFF Research Database (Denmark)

    Thyregod, Poul; Vibholm, Svend

    1991-01-01

    the flashover probability function and the corresponding distribution of first breakdown voltages under the inverse sampling procedure, and show how this relation may be utilized to assess the single-shot flashover probability corresponding to the observed average first breakdown voltage. Since the procedure......First breakdown voltages obtained under the inverse sampling procedure assuming a double exponential flashover probability function are discussed. An inverse sampling procedure commences the voltage application at a very low level, followed by applications at stepwise increased levels until...... is based on voltage applications in the neighbourhood of the quantile under investigation, the procedure is found to be insensitive to the underlying distributional assumptions...

  20. Effects of bias voltage on the corrosion resistance of titanium nitride thin films fabricated by dynamic plasma immersion ion implantation-deposition

    International Nuclear Information System (INIS)

    Tian Xiubo; Fu, Ricky K. Y.; Chu, Paul K.

    2002-01-01

    Dynamic plasma-based thin-film deposition incorporating ion mixing and plasma immersion is an effective technique to synthesize nitride-based hard films. We have fabricated TiN films using a filtered titanium vacuum arc in a nitrogen plasma environment. A pulsed high voltage is applied to the target for a short time when the metallic arc is fired to attain simultaneous plasma deposition and ion mixing. We investigate the dependence of the corrosion resistance and interfacial structure of the treated samples on the applied voltage. Our Auger results reveal an oxygen-rich surface film due to the non-ultra-high-vacuum conditions and high affinity of oxygen to titanium. The corrosion current is reduced by two orders of magnitude comparing the sample processed at 8 kV to the untreated sample, but the 23 kV sample unexpectedly shows worse results. The pitting potential diminishes substantially although the corrosion current is similar to that observed in the 8 kV sample. The polarization test data are consistent with our scanning electron microscopy observation, corroborating the difference in the pitting distribution and appearance. This anomalous behavior is believed to be due to the change in the chemical composition as a result of high-energy ion bombardment

  1. Offset energies at organic semiconductor heterojunctions and their influence on the open-circuit voltage of thin-film solar cells

    Science.gov (United States)

    Rand, Barry P.; Burk, Diana P.; Forrest, Stephen R.

    2007-03-01

    Organic semiconductor heterojunction (HJ) energy level offsets are modeled using a combination of Marcus theory for electron transfer, and generalized Shockley theory of the dark current density vs voltage (J-V) characteristics. This model is used to fit the J-V characteristics of several donor-acceptor combinations commonly used in thin film organic photovoltaic cells. In combination with measurements of the energetics of donor-acceptor junctions, the model predicts tradeoffs between the junction open-circuit voltage (VOC) and short-circuit current density (JSC) . The VOC is found to increase with light intensity and inversely with temperature for 14 donor-acceptor HJ materials pairs. In particular, we find that VOC reaches a maximum at low temperature (˜175K) for many of the heterojunctions studied. The maximum value of VOC is a function of the difference between the donor ionization potential and acceptor electron affinity, minus the binding energy of the dissociated, geminate electron-hole pair: a general relationship that has implications on the charge transfer mechanism at organic heterojunctions. The fundamental understanding provided by this model leads us to infer that the maximum power conversion efficiency of double heterostructure organic photovoltaic cells can be as high as 12%. When combined with mixed layers to increase photocurrent and stacked cells to increase VOC , efficiencies approaching 16% are within reach.

  2. Effects of bias voltage and annealing on the structure and mechanical properties of WC0.75N0.25 thin films

    International Nuclear Information System (INIS)

    Su, Y.D.; Hu, C.Q.; Wen, M.; Wang, C.; Liu, D.S.; Zheng, W.T.

    2009-01-01

    We investigated the effects of both bias voltage and annealing on the structure and mechanical properties of WC 0.75 N 0.25 thin films, deposited on Si (1 0 0) substrates by a direct current reactive magnetron sputtering system, in which the negative substrate bias voltage (V b ) was varied from floating (-1.6 V) to -200 V, and the deposited films were annealed at 800 deg. C for 2 h. The X-ray photoelectron spectroscopy and selected area electron diffraction analyses, along with the density-functional theory (DFT) calculations on the electronic structure, showed that WC 0.75 N 0.25 films were a single-phase of carbonitrides. After annealing, a significant decrease in hardness for the films was observed, being a result of point-defect annihilation as V b was in the range of floating to -120 V. However, when V b was in the range of -160 to -200 V, the hardness increased from ∼37 GPa for the as-deposited film to a maximum of ∼43 GPa for the annealed one. This increase in hardness after annealing might be attributed to age-hardening.

  3. Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

    International Nuclear Information System (INIS)

    Kizu, Takio; Tsukagoshi, Kazuhito; Aikawa, Shinya; Nabatame, Toshihide; Fujiwara, Akihiko; Ito, Kazuhiro; Takahashi, Makoto

    2016-01-01

    We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm"2/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (V_O) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense V_O in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

  4. Impulse breakdown of small air gap in electric field Part II: Statistical ...

    African Journals Online (AJOL)

    The patterns of shot distribution and maximum coverage at impulse breakdown voltage for positive point electr-odes (needle and cone electrodes) in small air gaps in non-uniform electric fields were investigated. During the breakdown test, a sheet of paper was placed on the plate electrode (-ve), and each breakdown shot ...

  5. The validity of the general similarity law for electrical breakdown of gases

    International Nuclear Information System (INIS)

    Osmokrovic, Predrag; Zivic, Tamara; Loncar, Boris; Vasic, Aleksandra

    2006-01-01

    This paper investigates the validity of the similarity law in cases of dc and pulse breakdown of gases. Geometrically similar systems insulated with SF 6 gas were used during experiments. It is shown that the similarity law is valid for dc breakdown voltage if the electron mean free path is included in geometrical parameters of the system, but not for pulse breakdown voltages. The explanation for this is the mechanism of the pulse discharge. The similarity law was expanded to take into account mechanisms of pulse breakdown initiation. Thus, the general similarity law is obtained, the validity of which in case of a pulse breakdown is established experimentally

  6. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    Energy Technology Data Exchange (ETDEWEB)

    Flewitt, A. J., E-mail: ajf@eng.cam.ac.uk [Electrical Engineering Division, Cambridge University, J J Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Powell, M. J. [252, Valley Drive, Kendal LA9 7SL (United Kingdom)

    2014-04-07

    It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65–0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10{sup 6}−10{sup 7} s{sup −1}, which suggests a weak localization of carriers in band tail states over a 20–40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage

  7. Impulse breakdown of small air gap in electric field Part I: Influence ...

    African Journals Online (AJOL)

    The influence of barrier position on breakdown voltage in air dielectric has been investigated. Needle and Cone positive point electrodes were used and the effects of electrode curvature on barrier position for maximum breakdown voltage were compared, with air gap for the point to plane electrode fixed at 10 cm for all the ...

  8. dc breakdown conditioning and breakdown rate of metals and metallic alloys under ultrahigh vacuum

    CERN Document Server

    Descoeudres, A; Calatroni, S; Taborelli, M; Wuensch, W

    2009-01-01

    RF accelerating structures of the Compact Linear Collider (CLIC) require a material capable of sustaining high electric field with a low breakdown rate and low induced damage. Because of the similarity of many aspects of DC and RF breakdown, a DC breakdown study is underway at CERN in order to test candidate materials and surface preparations, and have a better understanding of the breakdown mechanism under ultra-high vacuum in a simple setup. Conditioning speeds and breakdown fields of several metals and alloys have been measured. The average breakdown field after conditioning ranges from 100 MV/m for Al to 850 MV/m for stainless steel, and is around 170 MV/m for Cu which is the present base-line material for CLIC structures. The results indicate clearly that the breakdown field is limited by the cathode. The presence of a thin cuprous oxide film at the surface of copper electrodes significantly increases the breakdown field. On the other hand, the conditioning speed of Mo is improved by removing oxides at t...

  9. dc breakdown conditioning and breakdown rate of metals and metallic alloys under ultrahigh vacuum

    Directory of Open Access Journals (Sweden)

    A. Descoeudres

    2009-03-01

    Full Text Available The rf accelerating structures of the Compact Linear Collider (CLIC require a material capable of sustaining high electric field with a low breakdown rate and low induced damage. Because of the similarity of many aspects of dc and rf breakdown, a dc breakdown study is underway at CERN in order to test candidate materials and surface preparations, and have a better understanding of the breakdown mechanism under ultrahigh vacuum in a simple setup. Conditioning speeds and breakdown fields of several metals and alloys have been measured. The average breakdown field after conditioning ranges from 100  MV/m for Al to 850  MV/m for stainless steel, and is around 170  MV/m for Cu which is the present base-line material for CLIC structures. The results indicate clearly that the breakdown field is limited by the cathode. The presence of a thin cuprous oxide film at the surface of copper electrodes significantly increases the breakdown field. On the other hand, the conditioning speed of Mo is improved by removing oxides at the surface with a vacuum heat treatment, typically at 875°C for 2 hours. Surface finishing treatments of Cu samples only affect the very first breakdowns. More generally, surface treatments have an effect on the conditioning process itself, but not on the average breakdown field reached after the conditioning phase. In analogy to rf, the breakdown probability has been measured in dc with Cu and Mo electrodes. The dc data show similar behavior as rf as a function of the applied electric field.

  10. Study of nanometric thin pyrolytic carbon films for explosive electron emission cathode in high-voltage planar diode

    Energy Technology Data Exchange (ETDEWEB)

    Baryshevsky, Vladimir; Belous, Nikolai; Gurinovich, Alexandra; Gurnevich, Evgeny [Research Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Str. 11, Minsk 220030 (Belarus); Kuzhir, Polina, E-mail: polina.kuzhir@gmail.com [Research Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Str. 11, Minsk 220030 (Belarus); National Research Tomsk State University, 36 Lenin Prospekt, Tomsk 634050 (Russian Federation); Maksimenko, Sergey [Research Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Str. 11, Minsk 220030 (Belarus); National Research Tomsk State University, 36 Lenin Prospekt, Tomsk 634050 (Russian Federation); Molchanov, Pavel; Shuba, Mikhail [Research Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Str. 11, Minsk 220030 (Belarus); Roddatis, Vladimir [CIC energiGUNE, Albert Einstein 48, 01510 Minano, Alava (Spain); Institut für Materialphysik of Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Kaplas, Tommi; Svirko, Yuri [Institute of Photonics, University of Eastern Finland, P.O. Box 111, Joensuu FI-80101 (Finland)

    2015-04-30

    We report on an experimental study of explosive electron emission properties of cathode made by nanometric thin pyrolytic carbon (PyC) films (2–150 nm) deposited on Cu substrate via methane-based chemical vapor deposition. High current density at level of 300 A/cm{sup 2} in 5 · 10{sup −5} Pa vacuum has been observed together with very stable explosive emission from the planar cathode. The Raman spectroscopy investigation proves that the PyC films remain the same after seven shots. According to the optical image analysis of the cathode before and after one and seven shots, we conclude that the most unusual and interesting feature of using the PyC films/Cu cathode for explosive emission is that the PyC layer on the top of the copper target prevents its evaporation and oxidation, which leads to higher emission stability compared to conventional graphitic/Cu cathodes, and therefore results in longer working life. - Highlights: • Explosive electron emission from pyrolytic carbon (PyC) cathode is reported. • We observe high current density, 300 A/cm{sup 2}, and stable emission parameters. • PyC integrity ensures a high application potential for high current electronics.

  11. A Combined Electro-Thermal Breakdown Model for Oil-Impregnated Paper

    Directory of Open Access Journals (Sweden)

    Meng Huang

    2017-12-01

    Full Text Available The breakdown property of oil-impregnated paper is a key factor for converter transformer design and operation, but it is not well understood. In this paper, breakdown voltages of oil-impregnated paper were measured at different temperatures. The results showed that with the increase of temperature, electrical, electro-thermal and thermal breakdown occurred successively. An electro-thermal breakdown model was proposed based on the heat equilibrium and space charge transport, and negative differential mobility was introduced to the model. It was shown that carrier mobility determined whether it was electrical or thermal breakdown, and the model can effectively explain the temperature-dependent breakdown.

  12. Abnormal breakdown characteristic in a two-phase mixture

    International Nuclear Information System (INIS)

    Ye Qizheng; Li Jin; Lu Fei

    2006-01-01

    A two-phase mixture (TPM) is a mixture of gas and macroparticles of high concentration. Based on Townsend's theory, a new cell-iterative model in analytical form for the breakdown mechanism in TPM is presented. Compared with the original cell-iterative model in our previous paper, the obstructive factor of the macroparticles that influences the electron avalanche propagation is considered, except for the macroparticles distorting the electrical field and capture of the electrons. The cell attractive parameter k is presented according to the classical continuum theory for field charging. The modified Paschen law for a TPM is presented to calculate the breakdown voltage. The breakdown voltage of the TPM, U TPM , increases gradually with an increase in the macroparticle number density (m). The voltage U TPM is lower than that of the pure gas at low m values and larger at high m values. With a decrease of the macroparticle volume fraction and the dielectric mismatch, the voltage U TPM increases gradually at low m values and decreases gradually at high m values. The voltage U TPM at pd 200 cm Torr is lower than that at pd = 760 cm Torr for low m values and larger for high m values. This kind of abnormal breakdown characteristic in the TPM occurs in the case of high macroparticle volume fraction. On the other hand, the minimum of the TPM's Paschen curve increases with increase in m. It provides the possibility and the conditions of greatly increasing the breakdown voltage in a nearly uniform field

  13. Flexible integrated diode-transistor logic (DTL) driving circuits based on printed carbon nanotube thin film transistors with low operation voltage.

    Science.gov (United States)

    Liu, Tingting; Zhao, Jianwen; Xu, Weiwei; Dou, Junyan; Zhao, Xinluo; Deng, Wei; Wei, Changting; Xu, Wenya; Guo, Wenrui; Su, Wenming; Jie, Jiansheng; Cui, Zheng

    2018-01-03

    Fabrication and application of hybrid functional circuits have become a hot research topic in the field of printed electronics. In this study, a novel flexible diode-transistor logic (DTL) driving circuit is proposed, which was fabricated based on a light emitting diode (LED) integrated with printed high-performance single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs). The LED, which is made of AlGaInP on GaAs, is commercial off-the-shelf, which could generate free electrical charges upon white light illumination. Printed top-gate TFTs were made on a PET substrate by inkjet printing high purity semiconducting SWCNTs (sc-SWCNTs) ink as the semiconductor channel materials, together with printed silver ink as the top-gate electrode and printed poly(pyromellitic dianhydride-co-4,4'-oxydianiline) (PMDA/ODA) as gate dielectric layer. The LED, which is connected to the gate electrode of the TFT, generated electrical charge when illuminated, resulting in biased gate voltage to control the TFT from "ON" status to "OFF" status. The TFTs with a PMDA/ODA gate dielectric exhibited low operating voltages of ±1 V, a small subthreshold swing of 62-105 mV dec -1 and ON/OFF ratio of 10 6 , which enabled DTL driving circuits to have high ON currents, high dark-to-bright current ratios (up to 10 5 ) and good stability under repeated white light illumination. As an application, the flexible DTL driving circuit was connected to external quantum dot LEDs (QLEDs), demonstrating its ability to drive and to control the QLED.

  14. Studies on gas breakdown in pulsed radio frequency atmospheric pressure glow discharges

    International Nuclear Information System (INIS)

    Huo, W. G.; Jian, S. J.; Yao, J.; Ding, Z. F.

    2014-01-01

    In pulsed RF atmospheric pressure glow discharges, the gas breakdown judged by the rapid drop in the amplitude of the pulsed RF voltage is no longer universally true. The steep increment of the plasma-absorbed RF power is proposed to determine the gas breakdown. The averaged plasma-absorbed RF power over a pulse period is used to evaluate effects of the preceding pulsed RF discharge on the breakdown voltage of the following one, finding that the breakdown voltage decreases with the increment in the averaged plasma-absorbed RF power under constant pulse duty ratio. Effects of the pulse off-time on the breakdown voltage and the breakdown delay time are also studied. The obtained dependence of the breakdown voltage on the pulse off-time is indicative of the transitional plasma diffusion processes in the afterglow. The breakdown voltage varies rapidly as the plasma diffuses fast in the region of moderate pulse off-time. The contribution of nitrogen atom recombination at the alumina surface is demonstrated in the prolonged memory effect on the breakdown delay time vs. the pulse off-time and experimentally validated by introducing a trace amount of nitrogen into argon at short and long pulse off-times

  15. Nanocomposite dielectrics in PbO-BaO-Na2O-Nb2O5-SiO2 system with high breakdown strength for high voltage capacitor applications.

    Science.gov (United States)

    Zhang, Qingmeng; Luo, Jun; Tang, Qun; Han, Dongfang; Zhou, Yi; Du, Jun

    2012-11-01

    Nanocomposite dielectrics in 6PbO-4BaO-20Na2O-40Nb2O5-30SiO2 system were prepared via melt-quenching followed by controlled crystallization. X-ray diffraction studies reveal that Pb2Nb2O7, Ba,NaNb5O15, NaNbO3 and PbNb2O6 phases are formed from the as-quenched glass annealed in temperature range from 700 degrees C to 850 degrees C. Ba2NaNb5O15, Pb2Nb2O7 crystallizes at 700 degrees C and then Pb2Nb2O7 disappears at 850 degrees C, while PbNb2O6 and NaNbO3 are formed at 850 degrees C. Microstructural observation shows that the crystallized particles are nanometer-sized and randomly distributed with glass matrix being often found at grain boundaries. The dielectric constant of the nanocomposites formed at different crystallization temperatures shows good frequency and electric field stability. The breakdown strength is slightly decreased when the glass-ceramics thickness is varied from 1 mm to 4 mm. The corresponding energy density could reach 2.96 J/cm3 with a breakdown strength of 58 kV/mm for thickness of 1 mm.

  16. Degradation of thin poly(lactic acid) films: Characterization by capacitance–voltage, atomic force microscopy, scanning electron microscopy and contact-angle measurements

    International Nuclear Information System (INIS)

    Schusser, S.; Menzel, S.; Bäcker, M.; Leinhos, M.; Poghossian, A.; Wagner, P.; Schöning, M.J.

    2013-01-01

    For the development of new biopolymers and implantable biomedical devices with predicted biodegradability, simple, non-destructive, fast and inexpensive techniques capable for real-time in situ testing of the degradation kinetics of polymers are highly appreciated. In this work, a capacitive field-effect electrolyte–insulator–semiconductor (EIS) sensor has been applied for real-time in situ monitoring of degradation of thin poly(D,L-lactic acid) (PDLLA) films over a long-time period of one month. Generally, the polymer-modified EIS (PMEIS) sensor is capable of detecting any changes in the bulk, surface and interface properties of the polymer (e.g., thickness, coverage, dielectric constant, surface potential) induced by degradation processes. The time-dependent capacitance–voltage (C–V) characteristics of PMEIS structures were used as an indicator of the polymer degradation. To accelerate the PDLLA degradation, experiments were performed in alkaline buffer solution of pH 10.6. The results of these degradation measurements with the EIS sensor were verified by the detection of lactic acid (product of the PDLLA degradation) in the degradation medium. In addition, the micro-structural and morphological changes of the polymer surface induced by the polymer degradation have been systematically studied by means of scanning-electron microscopy, atomic-force microscopy, optical microscopy, and contact-angle measurements

  17. Ion transport in thin cell electrodeposition: modelling three-ion electrolytes in dense branched morphology under constant voltage and current conditions

    Energy Technology Data Exchange (ETDEWEB)

    Marshall, G. [Courant Institute of Mathematical Sciences, New York University, New York, NY 10012 (United States) and Laboratorio de Sistemas Complejos, Departamento de Computacion, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, 1428 Buenos Aires (Argentina)]. E-mail: marshalg@mail.retina.ar; Molina, F.V. [INQUIMAE, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, 1428 Buenos Aires (Argentina); Soba, A. [Laboratorio de Sistemas Complejos, Departamento de Computacion, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, 1428 Buenos Aires (Argentina)

    2005-05-30

    Electrochemical deposition (ECD) and spatially coupled bipolar electrochemistry (SCBE) experiments in thin-layer cells are known to produce complex ion transport patterns concomitantly with the growth of dendrite-like structures. Here we present a macroscopic model of ECD and SCBE with a three-ion electrolyte in conditions of dense branched morphology. The model describes ion transport and deposit growth through the one-dimensional Nernst-Planck equations for ion transport, the Poisson equation for the electric field and, for ECD, a growth law for deposit evolution. We present numerical simulations for typical electrochemical deposition experiments: dense branched morphology in ECD and the incubation period in SCBE. In ECD the model predicts cation, anion and proton concentration profiles, electric field variations and deposit growth speed, that are in qualitative agreement with experiments; the predicted evolution and collision of the deposit and proton fronts reveal a time scaling close to those observed in experiments. In SCBE, the model predicts that the inverse of the incubation time scales linearly with the applied voltage. Such behaviour was observed in experiments.

  18. Criteria for vacuum breakdown in rf cavities

    International Nuclear Information System (INIS)

    Peter, W.; Faehl, R.J.; Kadish, A.; Thode, L.E.

    1983-01-01

    A new high-voltage scaling based on Kilpatrick's criterion is presented that suggests that voltages more than twice the Kilpatrick limit can be obtained with identical initial conditions of vacuum and surface cleanliness. The calculations are based on the experimentally observed decrease in secondary electron emission with increasing ion-impact energy above 100 keV. A generalized secondary-emission package has been developed to simulate actual cavity dynamics in conjunction with our 2 1/2-dimensional fully electromagnetic particle-in-cell code CEMIT. The results are discussed with application to the suppression of vacuum breakdown in rf accelerator devices

  19. Surface of Alumina Films after Prolonged Breakdowns in Galvanostatic Anodization

    Directory of Open Access Journals (Sweden)

    Christian Girginov

    2011-01-01

    Full Text Available Breakdown phenomena are investigated at continuous isothermal (20∘C and galvanostatic (0.2–5 mA cm−2 anodizing of aluminum in ammonium salicylate in dimethylformamide (1 M AS/DMF electrolyte. From the kinetic (-curves, the breakdown voltage ( values are estimated, as well as the frequency and amplitude of oscillations of formation voltage ( at different current densities. The surface of the aluminum specimens was studied using atomic force microscopy (AFM. Data on topography and surface roughness parameters of the electrode after electric breakdowns are obtained as a function of anodization time. The electrode surface of anodic films, formed with different current densities until the same charge density has passed (2.5 C cm−2, was assessed. Results are discussed on the basis of perceptions of avalanche mechanism of the breakdown phenomena, due to the injection of electrons and their multiplication in the volume of the film.

  20. Gas Breakdown of Radio Frequency Glow Discharges in Helium at near Atmospheric Pressure

    International Nuclear Information System (INIS)

    Liu Xinkun; Xu Jinzhou; Cui Tongfei; Guo Ying; Zhang Jing; Shi Jianjun

    2013-01-01

    A one-dimensional self-consistent fluid model was developed for radio frequency glow discharge in helium at near atmospheric pressure, and was employed to study the gas breakdown characteristics in terms of breakdown voltage. The effective secondary electron emission coefficient and the effective electric field for ions were demonstrated to be important for determining the breakdown voltage of radio frequency glow discharge at near atmospheric pressure. The constant of A was estimated to be 64±4 cm −1 Torr −1 , which was proportional to the first Townsend coefficient and could be employed to evaluate the gas breakdown voltage. The reduction in the breakdown voltage of radio frequency glow discharge with excitation frequency was studied and attributed to the electron trapping effect in the discharge gap

  1. Experimental Study on Breakdown Characteristics of Transformer Oil Influenced by Bubbles

    Directory of Open Access Journals (Sweden)

    Chunxu Qin

    2018-03-01

    Full Text Available Bubbles will reduce the electric strength of transformer oil, and even result in the breakdown of the insulation. This paper has studied the breakdown voltages of transformer oil and oil-impregnated pressboard under alternating current (AC and direct current (DC voltages. In this paper, three types of electrodes were applied: cylinder-plan electrodes, sphere-plan electrodes, and cone-plan electrodes, and the breakdown voltages were measured in both no bubbles and bubbles. The sphere-sphere electrodes were used to study the breakdown voltage of the oil-impregnated pressboard. The results showed that under the influence of bubble, the breakdown voltage of the cylinder-plan electrode dropped the most, and the breakdown voltage of the cone-plan electrode dropped the least. The bubbles motion was the key factor of the breakdown. The discharge types of the oil-impregnated pressboard were different with bubbles, and under DC, the main discharge type was flashover along the oil-impregnated pressboard, while under AC, the main discharge type was breakdown through the oil-impregnated pressboard.

  2. On dielectric breakdown statistics

    International Nuclear Information System (INIS)

    Tuncer, Enis; James, D Randy; Sauers, Isidor; Ellis, Alvin R; Pace, Marshall O

    2006-01-01

    In this paper, we investigate the dielectric breakdown data of some insulating materials and focus on the applicability of the two- and three-parameter Weibull distributions. A new distribution function is also proposed. In order to assess the model distribution's trustworthiness, we employ the Monte Carlo technique and, randomly selecting data-subsets from the whole dielectric breakdown data, determine whether the selected probability functions accurately describe the breakdown data. The utility and strength of the proposed expression are illustrated distinctly by the numerical procedure. The proposed expression is shown to be a valuable alternative to the Weibull ones

  3. Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

  4. Product Work Breakdown Structure

    National Research Council Canada - National Science Library

    Okayama, Y; Chirillo, L. D

    1980-01-01

    .... Any such subdivision scheme is a work breakdown structure. Traditional shipbuilders employ work subdivisions by ships functional systems which are natural and appropriate for estimating and for early design stages...

  5. Plasma breakdown in a capacitively-coupled radiofrequency argon discharge

    Science.gov (United States)

    Smith, H. B.; Charles, C.; Boswell, R. W.

    1998-10-01

    Low pressure, capacitively-coupled rf discharges are widely used in research and commercial ventures. Understanding of the non-equilibrium processes which occur in these discharges during breakdown is of interest, both for industrial applications and for a deeper understanding of fundamental plasma behaviour. The voltage required to breakdown the discharge V_brk has long been known to be a strong function of the product of the neutral gas pressure and the electrode seperation (pd). This paper investigates the dependence of V_brk on pd in rf systems using experimental, computational and analytic techniques. Experimental measurements of V_brk are made for pressures in the range 1 -- 500 mTorr and electrode separations of 2 -- 20 cm. A Paschen-style curve for breakdown in rf systems is developed which has the minimum breakdown voltage at a much smaller pd value, and breakdown voltages which are significantly lower overall, than for Paschen curves obtained from dc discharges. The differences between the two systems are explained using a simple analytic model. A Particle-in-Cell simulation is used to investigate a similar pd range and examine the effect of the secondary emission coefficient on the rf breakdown curve, particularly at low pd values. Analytic curves are fitted to both experimental and simulation results.

  6. Electrical breakdown in vacuum

    International Nuclear Information System (INIS)

    Beukema, G.P.

    1980-01-01

    The main part of this thesis is dedicated to the field enhancement factor; in particular to the study of the origin, alteration and influence on the breakdown properties of different materials. This work required the examination of large surface areas on the same microscopic scale on which the relevant phenomena occur. (Pre)-breakdown measurements are described in which the anode condition does not play a role in the initiation of a breakdown, while the cathode can be considered as a broad-area electrode. The influence of adsorbed gases on pre-breakdown currents is investigated. It is shown that ions, released by field emission electrons from adsorbed layers on the anode change the emitting properties of a well-conditioned cathode if the current density at the anode is small. A new experimental arrangement is outlined to better distinguish between the different parameters which are important for the initiation of electrical breakdown. Comparative measurements between stainless steel and titanium electrodes are described to study the influence of either the cathode or the anode upon the initiation of a breakdown. (Auth.)

  7. Analysis of low-pressure dc breakdown in nitrogen between two spherical iron electrodes

    International Nuclear Information System (INIS)

    Pejovic, Momcilo M.; Nesic, Nikola T.; Pejovic, Milic M.

    2006-01-01

    The influence of afterglow period τ, voltage increase rate k, and electrode gap d on breakdown voltage U b for a nitrogen-filled tube with spherical electrodes of diameter D>>d and p=6.5 mbar has been investigated. The data for the breakdown voltage were obtained for the case when there is a presence of N( 4 S) atoms, which release secondary electrons via recombination on the cathode. By fitting the experimental data of breakdown voltage mean values as a function of the voltage increase rate, the static breakdown voltages for afterglow periods of 15 and 100 s were estimated. The electrical field as a function of the electrode gap using breakdown voltage mean values was also determined. It is shown that experimental results of the breakdown voltage mean value as a function of pd in the interval of d from 0.82 to 1.62 mm can be very well described with Paschen's law, valid for the case of parallel-plate electrodes

  8. Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba{sub 0.8}Sr{sub 0.2})TiO{sub 3} heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Sirikulrat, N., E-mail: scphi003@chiangmai.ac.th

    2012-02-29

    The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J= N-Ary-Summation {sub m}C{sub m}V{sup m} where C{sub m} is the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. - Highlights: Black-Right-Pointing-Pointer The n-n isotype heterojunction diodes of ceramic oxide semiconductors were prepared. Black-Right-Pointing-Pointer The current density-voltage (J-V) curves were analyzed using the Power Series (PS). Black-Right-Pointing-Pointer The J-V characteristics were found to be well described with PS at low order. Black-Right-Pointing-Pointer The thermionic emission and diode leakage currents were comparatively discussed.

  9. Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

    Directory of Open Access Journals (Sweden)

    Nazek El-Atab

    2013-10-01

    Full Text Available A thin-film ZnO(n/Si(p+ heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM AC-in-Air method in addition to conductive AFM (CAFM were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON ∼3.5 V. The measured breakdown voltage (VBR and electric field (EBR for this diode are 5.4 V and 3.86 MV/cm, respectively.

  10. Dark Current And Voltage Measurements Of Metal-Organic-Semiconductor (M-Or-S) Diode

    International Nuclear Information System (INIS)

    Adianto

    1996-01-01

    . Some Metal-Organic-Semiconductor (M-Or-S) thin film diodes, constructed with an organic polymer (polymerized toluene) as an active component has been successfully fabricated. The thin film M-Or-S diodes were fabricated on an n-type silicon with resistivity of 250-500 Ocm and p type silicon with resistivity of 10-20 Ocm as a substrate with polymerized toluene used as insulator. When deposited on silicon wafers with electrode of evaporated Ni on the n-type silicon and evaporated Au as the electrode on the polymerized toluene film, the electronic devices of Metal-Organic- Semiconductor (M-Or-S) type can be produced with one of its characteristics is that their light sensitivity. A plasma ion deposition system was constructed and used to deposit organic monomeric substance (toluene) that functioned as an isolator between semiconductor and the evaporated metal electrodes. The current-voltage measurements for different configurations of M-Or-S devices were carried out to determine the current-voltage (1-V) characteristics for M-Or-S devices with different materials and thicknesses. In addition to the 1-V measurement mentioned before, 1-V measurements of the devices were also carried out by using a curve tracer oscilloscope, and the picture of the effective parameters of each of the device could be taken by using a polaroid camera. Since the devices are very sensitive to light, the devices were all tested in a black-box which was covered by a black cloth to make sure that there was no light coming through. The experimental results for p- and n-type silicon substrates showed that an M-Or-S diode with n-type gave a higher breakdown voltage than that p- type silicon. In addition, the reverse bias breakdown voltage increased as the thickness of the thin film increased in the range of 50 -2500 V/μm

  11. Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

    KAUST Repository

    Petti, Luisa; Pattanasattayavong, Pichaya; Lin, Yen-Hung; Mü nzenrieder, Niko; Cantarella, Giuseppe; Yaacobi-Gross, Nir; Yan, Feng; Trö ster, Gerhard; Anthopoulos, Thomas D.

    2017-01-01

    , depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as −3.5 V. Importantly, discrete CuSCN transistors

  12. On correction factor in scaling law for low pressure DC gas breakdown

    International Nuclear Information System (INIS)

    Gleb Wataghin, UNICAMP, Campinas, SP (Brazil))" data-affiliation=" (Instituto de Física Gleb Wataghin, UNICAMP, Campinas, SP (Brazil))" >Ronchi, G; Gleb Wataghin, UNICAMP, Campinas, SP (Brazil))" data-affiliation=" (Instituto de Física Gleb Wataghin, UNICAMP, Campinas, SP (Brazil))" >Machida, M

    2014-01-01

    The low pressure gas breakdown described by Paschen's law in Townsend theory, i.e. the breakdown voltage as a function of gas pressure p and the electrode distance d, provides an accurate description of breakdown in DC discharges when the ratio between inter-electrode gap distance d and electrode radii R tends to zero. On increasing of the ratio d/R, the Paschen's curves are shifted to the region of higher breakdown voltage and higher pd values. A modified Paschen's law recently proposed is well satisfied in our measurements. However, the value of constant b changes not only due to gas type but also according to electrode gap distance; furthermore, gas breakdown voltages are considerably modified by plasma-wall interactions due to glass tube proximity in the discharge.

  13. Effect of Ca doping level on the laser-induced voltages in tilted La{sub 1-x}Ca{sub x}MnO{sub 3} (0.1 ≤ x ≤ 0.7) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Ji; Zhang, Hui; Chen, Qingming; Liu, Xiang [Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming (China); Theingi, Mya [Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming (China); University of Yangon, Department of Chemistry, Yangon (Myanmar)

    2014-03-15

    Tilted La{sub 1-x}Ca{sub x}MnO{sub 3} (0.1 ≤ x ≤ 0.7) thin films have been grown on vicinal cut LaAlO{sub 3} (100) substrate by pulsed laser deposition. The laser-induced voltage effect was studied at room temperature with the KrF excimer laser using as the thermal source. The relationships between Ca doping level and voltage signal, response time and anisotropy Seebeck coefficient were established. The voltage signal and anisotropy Seebeck coefficient increase at first with increasing Ca doping level, reach a maximum at the same Ca content around x = 0.5, and then decrease. The respond time decreases with the Ca concentration increasing, and changes very little after x = 0.5. The figure of merit F{sub m} was also the largest at this doping level, indicating a potential good performance of the photodetector devices. The variation of intrinsic structural and transport anisotropy induced by the change of Ca concentration has been proposed to account for the different LIV effects observed in LCMO thin films. (orig.)

  14. Radiation effects on breakdown in silicon multiguarded diodes

    International Nuclear Information System (INIS)

    Bisello, D.; Da Rold, M.; Franzin, L.; Wheadon, R.

    1996-01-01

    The authors have investigated the current-voltage characteristics of silicon PIN diodes with a number of different multiguard structures. These structures were designed to increase the overall device breakdown voltage. The same measurements were carried out after gamma irradiation at different doses and neutron irradiation at fluences beyond type-inversion. This study is a first step towards defining guard structures optimized for operation in high-radiation environments such as those expected at the LHC

  15. Low operating voltage InGaZnO thin-film transistors based on Al{sub 2}O{sub 3} high-k dielectrics fabricated using pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K. [Qingdao University, Qingdao (China); DongEui University, Busan (Korea, Republic of); Lee, W. J.; Shin, B. C. [DongEui University, Busan (Korea, Republic of); Cho, C. R. [Pusan National University, Busan (Korea, Republic of)

    2014-05-15

    Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al{sub 2}O{sub 3} dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al{sub 2}O{sub 3} and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al{sub 2}O{sub 3} gate dielectric exhibits a very low leakage current density of 1.3 x 10{sup -8} A/cm{sup 2} at 5 V and a high capacitance density of 60.9 nF/cm{sup 2}. The IGZO TFT with a structure of Ni/IGZO/Al{sub 2}O{sub 3}/Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm{sup 2}V{sup -1}s{sup -1}, an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10{sup 7}.

  16. Abnormal breakdown characteristic in a two-phase mixture

    Energy Technology Data Exchange (ETDEWEB)

    Ye Qizheng; Li Jin; Lu Fei [College of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, 430074 (China)

    2006-05-21

    A two-phase mixture (TPM) is a mixture of gas and macroparticles of high concentration. Based on Townsend's theory, a new cell-iterative model in analytical form for the breakdown mechanism in TPM is presented. Compared with the original cell-iterative model in our previous paper, the obstructive factor of the macroparticles that influences the electron avalanche propagation is considered, except for the macroparticles distorting the electrical field and capture of the electrons. The cell attractive parameter k is presented according to the classical continuum theory for field charging. The modified Paschen law for a TPM is presented to calculate the breakdown voltage. The breakdown voltage of the TPM, U{sub TPM}, increases gradually with an increase in the macroparticle number density (m). The voltage U{sub TPM} is lower than that of the pure gas at low m values and larger at high m values. With a decrease of the macroparticle volume fraction and the dielectric mismatch, the voltage U{sub TPM} increases gradually at low m values and decreases gradually at high m values. The voltage U{sub TPM} at pd 200 cm Torr is lower than that at pd = 760 cm Torr for low m values and larger for high m values. This kind of abnormal breakdown characteristic in the TPM occurs in the case of high macroparticle volume fraction. On the other hand, the minimum of the TPM's Paschen curve increases with increase in m. It provides the possibility and the conditions of greatly increasing the breakdown voltage in a nearly uniform field.

  17. Humidity and polarity influence on MIM PZT capacitor degradation and breakdown

    NARCIS (Netherlands)

    Wang, Jiahui; Salm, Cora; Houwman, Evert; Schmitz, Jurriaan; Nguyen, Minh

    2016-01-01

    This paper presents a reliability study on unpackaged metal-PZT-metal capacitors. Both ramped voltage stress (RVS) and time dependent dielectric breakdown (TDDB) measurements show that environmental humidity dramatically worsens the PZT reliability. Visible breakdown spots on the surface of PZT

  18. Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2014-01-01

    Full Text Available This paper proposes a novel pixel circuit design and driving method for active-matrix organic light-emitting diode (AM-OLED displays that use low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs as driving element. The automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE simulator was used to verify that the proposed pixel circuit, which comprises five transistors and one capacitor, can supply uniform output current. The voltage programming method of the proposed pixel circuit comprises three periods: reset, compensation with data input, and emission periods. The simulated results reflected excellent performance. For instance, when ΔVTH=±0.33 V, the average error rate of the OLED current variation was low (<0.8%, and when ΔVTH_OLED=+0.33 V, the error rate of the OLED current variation was 4.7%. Moreover, when the I×R (current × resistance drop voltage of a power line was 0.3 V, the error rate of the OLED current variation was 5.8%. The simulated results indicated that the proposed pixel circuit exhibits high immunity to the threshold voltage deviation of both the driving poly-Si TFTs and OLEDs, and simultaneously compensates for the I×R drop voltage of a power line.

  19. Beauty in the Breakdown

    Science.gov (United States)

    Brisco, Nicole

    2008-01-01

    Most human beings look at erosion as the destruction of a surface, but artists can see that erosion often creates indefinable beauty. Where do you see beauty in the breakdown? In this article, the author presents an innovative lesson that would allow students to observe both human and physical nature. In this activity students will create a work…

  20. Improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers

    Science.gov (United States)

    Sima, Wenxia; Jiang, Xiongwei; Peng, Qingjun; Sun, Potao

    2018-05-01

    Electrical breakdown is an important physical phenomenon in electrical equipment and electronic devices. Many related models and theories of electrical breakdown have been proposed. However, a widely recognized understanding on the following phenomenon is still lacking: impulse breakdown strength which varies with waveform parameters, decrease in the breakdown strength of AC voltage with increasing frequency, and higher impulse breakdown strength than that of AC. In this work, an improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers is proposed based on the Harmonic oscillator model. Simulation and experimental results show that, the energy of trapped charges obtained from AC stress is higher than that of impulse voltage, and the absorbed activation energy increases with the increase in the electric field frequency. Meanwhile, the frequency-dependent relative dielectric constant ε r and dielectric loss tanδ also affect the absorption of activation energy. The absorbed activation energy and modified trap level synergistically determine the breakdown strength. The mechanism analysis of breakdown strength under various voltage waveforms is consistent with the experimental results. Therefore, the proposed model of activation energy absorption in the present work may provide a new possible method for analyzing and explaining the breakdown phenomenon in semi-crystalline insulating polymers.

  1. The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

    Directory of Open Access Journals (Sweden)

    Donghua Liu

    2015-01-01

    Full Text Available This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD improved by field plate technology. Effect of metal field plate (MFP and polysilicon field plate (PFP on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp = 7.88 ohm * mm2 are achieved.

  2. High voltage switches having one or more floating conductor layers

    Science.gov (United States)

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  3. Pre-breakdown light emission phenomena in low-pressure argon between parabolic electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Wagenaars, E [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Perriens, N W B [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Brok, W J M [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Bowden, M D [Department of Physics and Astronomy, The Open University, Milton Keynes, MK7 6AA (United Kingdom); Veldhuizen, E M van [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Kroesen, G M W [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands)

    2006-09-07

    An experimental study on pre-breakdown light emission in low-pressure argon gas was performed. In a pulsed discharge, pre-breakdown phenomena were observed for repetition rates between 100 and 2000 Hz and pulse duration of 100 {mu}s. These phenomena were studied with time-resolved emission imaging using an intensified charge coupled device camera. The origin of the pre-breakdown emission was identified as diffusion of volume charges left over from previous discharges. These charges were accelerated towards the anode in small electron avalanches causing excitation of argon atoms. Different spatial distributions of the pre-breakdown light emission for different times between discharges were measured and the effects of the pre-breakdown phenomena on the main breakdown phase were studied using a double voltage pulse. The observed effects were attributed to the distribution of volume charges, left over from previous discharges, in the discharge gap during the pre-breakdown phase.

  4. Novel dielectric reduces corona breakdown in ac capacitors

    Science.gov (United States)

    Loehner, J. L.

    1972-01-01

    Dielectric system was developed which consists of two layers of 25-gage paper separated by one layer of 50-gage polypropylene to reduce corona breakdown in ac capacitors. System can be used in any alternating current application where constant voltage does not exceed 400 V rms. With a little research it could probably be increased to 700 to 800 V rms.

  5. Influence of ultrasound on the electrical breakdown of transformer oil

    Science.gov (United States)

    Isakaev, E. Kh; Tyuftyaev, A. S.; Gadzhiev, M. Kh; Demirov, N. A.; Akimov, P. L.

    2018-01-01

    When the transformer oil is exposed to low power ultrasonic waves (cavitation bubbles. With the increase of sonication time the breakdown voltage also increases, nonlinearly. The experimental data indicate the possibility of using ultrasonic waves of low power for degassing of transformer oil.

  6. Low voltage varistor ceramics based on SnO2

    Indian Academy of Sciences (India)

    WINTEC

    School of Environmental and Chemical Engineering, Chonbuk National University, Jeonju 561-756, South Korea. † ... et al (2001) compared the grain boundary barrier proper- ... parameter, EB (breakdown voltage), was taken as the field.

  7. Gas breakdown in tokamaks

    International Nuclear Information System (INIS)

    Abramov, V.A.; Pogutse, O.P.; Yurchenko, Eh.I.

    1975-01-01

    The initial stage of the charge development in a tokomak is considered theoretically. It is supposed that all electrons produced in neutral gas ionisation process are in the regime of an almost continuous acceleration. The production time of a given electron density is calculated as a function of the neutral gas density and of parameters of the vortex electric field. The mechanism of plasma escape on walls is considered. It is shown that the escaping time is defined by a specific inertial flow of plasma and depends on whether chamber walls are metal or dielectric. The criterion of the gas breakdown in a toroidal system is formulated. The developed theory is shown to explain a strong dependence of the breakdown on the gas initial density [ru

  8. A three-dimensional breakdown model of SOI lateral power transistors with a circular layout

    International Nuclear Information System (INIS)

    Guo Yufeng; Wang Zhigong; Sheu Gene

    2009-01-01

    This paper presents an analytical three-dimensional breakdown model of SOI lateral power devices with a circular layout. The Poisson equation is solved in cylindrical coordinates to obtain the radial surface potential and electric field distributions for both fully- and partially-depleted drift regions. The breakdown voltages for N + N and P + N junctions are derived and employed to investigate the impact of cathode region curvature. A modified RESURF criterion is proposed to provide a design guideline for optimizing the breakdown voltage and doping concentration in the drift region in three dimensional space. The analytical results agree well with MEDICI simulation results and experimental data from earlier publications. (semiconductor devices)

  9. Pre-breakdown phenomena and discharges in a gas-liquid system

    Science.gov (United States)

    Tereshonok, D. V.; Babaeva, N. Yu; Naidis, G. V.; Panov, V. A.; Smirnov, B. M.; Son, E. E.

    2018-04-01

    In this paper, we investigate pre-breakdown and breakdown phenomena in gas-liquid systems. Cavitation void formation and breakdown in bubbles immersed in liquids are studied numerically, while complete breakdown of bubbled water is studied in experiments. It is shown that taking into account the dependence of water dielectric constant on electric field strength plays the same important role for cavitation void appearance under the action of electrostriction forces as the voltage rise time. It is also shown that the initial stage of breakdown in deformed bubbles immersed in liquid strongly depends on spatial orientation of the bubbles relative to the external electric field. The effect of immersed microbubbles, distributed in bulk water, on breakdown time and voltage is studied experimentally. At the breakdown voltage, the slow ‘thermal’ mechanism is changed by the fast ‘streamer-leader’ showing a decrease in breakdown time by two orders of magnitude by introducing microbubbles (0.1% of volumetric gas content) into the water. In addition, the plasma channel is found to pass between nearby microbubbles, exhibiting some ‘guidance’ effect.

  10. Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

    Science.gov (United States)

    Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

    2017-02-09

    Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

  11. Investigation of efficient termination structure for improved breakdown properties of semiconductor radiation detectors

    International Nuclear Information System (INIS)

    Krizaj, D.; Resnik, D.; Vrtacnik, D.; Amon, S.

    1998-01-01

    Efficiency of a new junction termination structure for improvement of breakdown properties of semiconductor radiation detectors is investigated. The structure consists of a diffused resistor winding around the active junction in a spiral fashion. The current flow through the spiral enables controlled potential distribution along the spiral turns and thus controlled depletion spreading from the main junction, efficiently preventing premature avalanche breakdown. Both multiple guard-ring structures and spiral junction termination structures have shown good breakdown properties typically three to five times higher than breakdown voltages of diodes without junction termination. The breakdown voltages of spiral junction termination structures are only weakly influenced by changes in substrate doping concentration caused by neutron irradiation. They can thus be considered for termination of future semiconductor radiation detectors

  12. Electrical transport properties and laser-induced voltage effect in La{sub 0.8}Ca{sub 0.2}MnO{sub 3} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Theingi, Mya [Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming (China); University of Yangon, Department of Chemistry, Yangon (Myanmar); Ma, Ji; Zhang, Hui; Cui, Qi; Yi, Jianhong; Chen, Qingming [Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming (China)

    2014-03-15

    La{sub 0.8}Ca{sub 0.2}MnO{sub 3} (LCMO) thin films about 200 nm thickness were grown on untilted and tilted (5 , 10 and 15 ) LaAlO{sub 3} (100) single crystal substrates by pulsed laser deposition technique. Electrical properties of the epitaxial thin films were studied by conventional four-probe technique and the anisotropic thermoelectric properties of the films grown on the tilted substrates have been investigated by laser-induced voltage (LIV) measurements. X-ray diffraction analysis and atomic force microscopy results show that the prepared LCMO thin films have a single phase and high crystalline quality. The remarkably large temperature coefficient of resistance (TCR) values (above 11 %/K) are observed in the all films. TCR value reaches 18 %/K on the film grown on 10 tilted substrate. The intensity of LIV signals monotonously increases with the tilting angles, and the largest signal is 148 mV with the fast time response 229 ns for the film grown on 15 tilted substrate. (orig.)

  13. PHENIX Work Breakdown Structure

    International Nuclear Information System (INIS)

    1994-02-01

    The Work Breakdown Structure (WBS) Book begins with this Overview section, which contains the high-level summary cost estimate, the cost profile, and the global construction schedule. The summary cost estimate shows the total US cost and the cost in terms of PHENIX construction funds for building the PHENIX detector. All costs in the WBS book are shown in FY 1993 dollars. Also shown are the institutional and foreign contributions, the level of pre-operations funding, and the cost of deferred items. Pie charts are presented at PHENIX WBS level 1 and 2 that show this information. The PHENIX construction funds are shown broken down to PHENIX WBS level 3 items per fiscal year, and the resulting profile is compared to the RHIC target profile. An accumulated difference of the two profiles is also shown. The PHENIX global construction schedule is presented at the end of the Overview section. Following the Overview are sections for each subsystem. Each subsystem section begins with a summary cost estimate, cost profile, and critical path. The total level 3 cost is broken down into fixed costs (M ampersand S), engineering costs (EDIA) and labor costs. Costs are further broken down in terms of PHENIX construction funds, institutional and foreign contributions, pre-operations funding, and deferred items. Also shown is the contingency at level 3 and the level 4 breakdown of the total cost. The cost profile in fiscal years is shown at level 3. The subsystem summaries are followed by the full cost estimate and schedule sheets for that subsystem. These detailed sheets are typically carried down to level 7 or 8. The cost estimate shows Total, M ampersand S, EDIA, and Labor breakdowns, as well as contingency, for each WBS entry

  14. Conduction and stability of holmium titanium oxide thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Castán, H., E-mail: helena@ele.uva.es [Department of Electronic, University of Valladolid, 47011 Valladolid (Spain); García, H.; Dueñas, S.; Bailón, L. [Department of Electronic, University of Valladolid, 47011 Valladolid (Spain); Miranda, E. [Departament d' Enginyería Electrònica, Universitat Autónoma de Barcelona, 08193 Bellaterra (Spain); Kukli, K. [Department of Chemistry, University of Helsinki, FI-00014 Helsinki (Finland); Institute of Physics, University of Tartu, EE-50411,Tartu (Estonia); Kemell, M.; Ritala, M.; Leskelä, M. [Department of Chemistry, University of Helsinki, FI-00014 Helsinki (Finland)

    2015-09-30

    Holmium titanium oxide (HoTiO{sub x}) thin films of variable chemical composition grown by atomic layer deposition are studied in order to assess their suitability as dielectric materials in metal–insulator–metal electronic devices. The correlation between thermal and electrical stabilities as well as the potential usefulness of HoTiO{sub x} as a resistive switching oxide are also explored. It is shown that the layer thickness and the relative holmium content play important roles in the switching behavior of the devices. Cycled current–voltage measurements showed that the resistive switching is bipolar with a resistance window of up to five orders of magnitude. In addition, it is demonstrated that the post-breakdown current–voltage characteristics in HoTiO{sub x} are well described by a power-law model in a wide voltage and current range which extends from the soft to the hard breakdown regimes. - Highlights: • Gate and memory suitabilities of atomic layer deposited holmium titanium oxide. • Holmium titanium oxide exhibits resistive switching. • Layer thickness and holmium content influence the resistive switching. • Low and high resistance regimes follow a power-law model. • The power-law model can be extended to the hard breakdown regime.

  15. Breakdown criteria due to radio-frequency fields in vacuum. Final report

    International Nuclear Information System (INIS)

    Reid, D.W.; Lohsen, R.A.

    1982-01-01

    The factors that affect the voltage at which vacuum gaps break down are analyzed. Based on the literature and some simplifying assumptions, a functional dependence is hypothesized. The hypothesis is related to a proposed experiment using radio-frequency power to generate the breakdown voltage

  16. Breakdowns in collaborative information seeking

    DEFF Research Database (Denmark)

    Hertzum, Morten

    2010-01-01

    Collaborative information seeking is integral to many professional activities. In hospital work, the medication process encompasses continual seeking for information and collaborative grounding of information. This study investigates breakdowns in collaborative information seeking through analyses...... of the use of the electronic medication record adopted in a Danish healthcare region and of the reports of five years of medication incidents at Danish hospitals. The results show that breakdowns in collaborative information seeking is a major source of medication incidents, that most of these breakdowns...... are breakdowns in collaborative grounding rather than information seeking, that the medication incidents mainly concern breakdowns in the use of records as opposed to oral communication, that the breakdowns span multiple degrees of separation between clinicians, and that the electronic medication record has...

  17. Voltage-controlled ferroelastic switching in Pb(Zr.sub.0.2./sub.Ti.sub.0.8./sub.)O.sub.3./sub. thin films

    Czech Academy of Sciences Publication Activity Database

    Khan, A.I.; Martí, Xavier; Serrao, C.; Ramesh, R.; Salahuddin, S.

    2015-01-01

    Roč. 15, č. 4 (2015), s. 2229-2234 ISSN 1530-6984 Institutional support: RVO:68378271 Keywords : nanodomains * ferroelastic switching * ferroelectricity * Pb(Zr 0.2 Ti 0.8 )O 3 * thin film Subject RIV: BE - Theoretical Physics Impact factor: 13.779, year: 2015

  18. Ferroelectric and piezoelectric thin films and their applications for integrated capacitors, piezoelectric ultrasound transducers and piezoelectric switches

    International Nuclear Information System (INIS)

    Klee, M; Boots, H; Kumar, B; Heesch, C van; Mauczok, R; Keur, W; Wild, M de; Esch, H van; Roest, A L; Reimann, K; Leuken, L van; Wunnicke, O; Zhao, J; Schmitz, G; Mienkina, M; Mleczko, M; Tiggelman, M

    2010-01-01

    Ferroelectric and piezoelectric thin films are gaining more and more importance for the integration of high performance devices in small modules. High-K 'Integrated Discretes' devices have been developed, which are based on thin film ferroelectric capacitors integrated together with resistors and ESD protection diodes in a small Si-based chip-scale package. Making use of ferroelectric thin films with relative permittivity of 950-1600 and stacking processes of capacitors, extremely high capacitance densities of 20-520 nF/mm 2 , high breakdown voltages up to 140 V and lifetimes of more than 10 years at operating voltages of 5 V and 85 deg. C are achieved. Thin film high-density capacitors play also an important role as tunable capacitors for applications such as tuneable matching circuits for RF sections of mobile phones. The performance of thin film tuneable capacitors at frequencies between 1 MHz and 1 GHz is investigated. Finally thin film piezoelectric ultrasound transducers, processed in Si- related processes, are attractive for medical imaging, since they enable large bandwidth (>100%), high frequency operation and have the potential to integrate electronics. With these piezoelectric thin film ultrasound transducers real time ultrasound images have been realized. Finally, piezoelectric thin films are used to manufacture galvanic MEMS switches. A model for the quasi-static mechanical behaviour is presented and compared with measurements.

  19. Voltage-breakdown testing for an RFQ structure

    International Nuclear Information System (INIS)

    Williams, S.W.; DePaula, R.F.; Keffeler, D.R.; Rodenz, G.R.

    1981-01-01

    Designs for Radio Frequency Quadrupole (RFQ) accelerators of reasonable length require operation with surface fields above the threshold of Kilpatrick's Sparking Criterion. A cavity was designed using SUPERFISH to test the validity of this criterion and to determine operating limits for the Los Alamos Proof-of-Princple (POP) RFQ. The testing was done near 420 MHz, with varying qualities of surface finish on the electrodes. The experimental set-up and procedure are described, as are the data and results. A method of calibrating the test is presented

  20. Transistor collector breakdown in the presence of conducted EMP and gamma radiation

    International Nuclear Information System (INIS)

    Rice, D.H.

    1975-01-01

    In this paper we develop expressions which describe breakdown, negative resistance and latch characteristics for a common emitter transistor when exposed to simultaneous conducted EMP and ionizing radiation. These expressions are derived from a modified Ebers-Moll model and show that common emitter breakdown voltage is reduced, latch (or sustaining voltage) remains unchanged, and that the negative resistance characteristics are changed. Using the modified Ebers-Moll model good agreement between predicted and observed circuit response is demonstrated when the circuits are exposed to a rising collector voltage (due to EMP) and simultaneous ionizing (gamma) radiation

  1. Revealing the effect of electrode materials on the performance of low-voltage pentacene thin film transistor by in-situ surface potential measurement

    International Nuclear Information System (INIS)

    Chen, Q L; Liu, Q C; Jin, H Y; Ouyang, M; Xie, W G

    2015-01-01

    We investigate the effect of contact potential between Au, CuO x and Au-CuO x , and pentacene thin films by Kevin Probe microscopy Compared to the Au contact, although the injection barrier is lower for CuO x contact, the extraction barrier is higher, and the total contact resistance is only slightly smaller. The better performance of CuO x contact device results from the doping effect from the p-type CuO x . The introduction of additional Au top layer deposited on the thin CuO x layer lowersthe extraction barrier and facilitates better carrier transfer, which further reduces the contact resistance. Therefore, both the apparent mobility and channel mobility are the best in the device with Au-CuO x double layer contact. (paper)

  2. Giant, Voltage-Actuated Deformation of a Dielectric Elastomer under Dead Load

    OpenAIRE

    Huang, Jiangshui; Li, Tiefeng; Foo, Choon Chiang; Clarke, David R.; Zhu, Jian; Suo, Zhigang

    2012-01-01

    Far greater voltage-actuated deformation is achievable for a dielectric elastomer under equal-biaxial dead load than under rigid constraint usually employed. Areal strains of 488% are demonstrated. The dead load suppresses electric breakdown, enabling the elastomer to survive the snap-through electromechanical instability. The breakdown voltage is found to increase with the voltage ramp rate. A nonlinear model for viscoelastic dielectric elastomers is developed and shown to be consistent with...

  3. Strategies to reduce the open-circuit voltage deficit in Cu2ZnSn(S,Se)4 thin film solar cells

    Science.gov (United States)

    Kim, Jekyung; Shin, Byungha

    2017-09-01

    Cu2ZnSn(S,Se)4 thin film solar cell has attracted significant attention in thin film solar cell technologies considering its low-cost, non-toxicity, and earth-abundance. However, the highest efficiency still remains at 12.6%, far below the theoretical efficiency of Shockley-Queisser (SQ) limit of around 30%. The limitation behind such shortcoming in the device performance was reported to stem primarily from a high V oc deficit compared to other thin film solar cell technologies such as CdTe or Cu(In,Ga)Se2 (CIGS), whose origins are attributed to the prevalence of band tailing from cation disordering as well as to the high recombination at the interfaces. In this report, systematic studies on the causes of a high V oc deficit and associated remarkable approaches to achieve high V oc have been reviewed, provided with a guidance on the future direction of CZTSSe research in resolving the high V oc deficit issue. [Figure not available: see fulltext.

  4. Two-stage unified stretched-exponential model for time-dependence of threshold voltage shift under positive-bias-stresses in amorphous indium-gallium-zinc oxide thin-film transistors

    Science.gov (United States)

    Jeong, Chan-Yong; Kim, Hee-Joong; Hong, Sae-Young; Song, Sang-Hun; Kwon, Hyuck-In

    2017-08-01

    In this study, we show that the two-stage unified stretched-exponential model can more exactly describe the time-dependence of threshold voltage shift (ΔV TH) under long-term positive-bias-stresses compared to the traditional stretched-exponential model in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). ΔV TH is mainly dominated by electron trapping at short stress times, and the contribution of trap state generation becomes significant with an increase in the stress time. The two-stage unified stretched-exponential model can provide useful information not only for evaluating the long-term electrical stability and lifetime of the a-IGZO TFT but also for understanding the stress-induced degradation mechanism in a-IGZO TFTs.

  5. Laser damage resistance of hafnia thin films deposited by electron beam deposition, reactive low voltage ion plating, and dual ion beam sputtering

    International Nuclear Information System (INIS)

    Gallais, Laurent; Capoulade, Jeremie; Natoli, Jean-Yves; Commandre, Mireille; Cathelinaud, Michel; Koc, Cian; Lequime, Michel

    2008-01-01

    A comparative study is made of the laser damage resistance of hafnia coatings deposited on fused silica substrates with different technologies: electron beam deposition (from Hf or HfO2 starting material), reactive low voltage ion plating, and dual ion beam sputtering.The laser damage thresholds of these coatings are determined at 1064 and 355 nm using a nanosecond pulsed YAG laser and a one-on-one test procedure. The results are associated with a complete characterization of the samples: refractive index n measured by spectrophotometry, extinction coefficient k measured by photothermal deflection, and roughness measured by atomic force microscopy

  6. Influence of temperature on current-induced domain wall motion and its Walker breakdown

    International Nuclear Information System (INIS)

    Fan, Lvchao; Hu, Jingguo; Su, Yuanchang; Zhu, Jinrong

    2016-01-01

    The current-driven domain wall propagation along a thin ferromagnetic strip with thermal field is studied by means of micromagnetic simulations. The results show that the velocity of domain wall is almost independent of temperature until Walker breakdown happened. However the thermal field can suppress Walker breakdown and makes domain wall move faster. Further analysis indicates that the thermal field tends to keep the out-of-plane magnetic moment of the domain wall stay in high value, which can promote domain wall motion and suppress the Walker breakdown by breaking the period of domain wall transformation. - Highlights: • Influences of temperature on the displacement and the velocity of DW are shown. • The suppression of Walker breakdown by temperature is given. • The reason for suppressing Walker breakdown is analyzed. • The breaking transformation period of Walker breakdown by temperature is given.

  7. Intracellular protein breakdown. 8

    International Nuclear Information System (INIS)

    Bohley, P.; Kirschke, H.; Langner, J.; Wiederanders, B.; Ansorge, S.

    1976-01-01

    Double-labelled proteins from rat liver cytosol ( 14 C in long-lived, 3 H in short-lived proteins after in-vivo-labelling) are used as substrates for unlabelled proteinases in vitro. Differences in the degradation rates of short-lived and long-lived proteins in vitro by different proteinases and after addition of different effectors allow conclusions concerning their importance for the in-vivo-turnover of substrate proteins. The main activity (>90%) of soluble lysosomal proteinases at pH 6.1 and pH 6.9 is caused by thiolproteinases, which degrade preferentially short-lived cytosol proteins. These proteinases are inhibited by leupeptin. Autolysis of double-labelled cell fractions shows a remarkably faster breakdown of short-lived substrate proteins only in the soluble part of lysosomes. Microsomal fractions degrade in vitro preferentially long-lived substrate proteins. (author)

  8. Breakdown concepts for contingency tables

    NARCIS (Netherlands)

    Kuhnt, S.

    2010-01-01

    Loglinear Poisson models are commonly used to analyse contingency tables. So far, robustness of parameter estimators as well as outlier detection have rarely been treated in this context. We start with finite-sample breakdown points. We yield that the breakdown point of mean value estimators

  9. Solution-processed PCDTBT capped low-voltage InGaZnO{sub x} thin film phototransistors for visible-light detection

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Han; Xiao, Yubin; Chen, Zefeng; Xu, Wangying; Long, Mingzhu; Xu, Jian-Bin, E-mail: jbxu@ee.cuhk.edu.hk [Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong (China)

    2015-06-15

    The effects of visible-light detection based on solution processed poly[N-9′′-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′, 3′benzothiadiazole) (PCDTBT) capped InGaZnOx (IGZO) phototransistors with Al{sub 2}O{sub x} serving as gate dielectric are investigated in this paper. The high-k dielectric is used to lower the device operating voltage down to 2 V. Photons emitted from laser sources with the wavelengths (λ) of 532 nm and 635 nm are absorbed through the layer of PCDTBT to generate electron-hole-pairs (EHPs). After the separation of EHPs, electrons are injected into IGZO layer through the p-n junction formed between the IGZO (n-type semiconductor) and the PCDTBT (p-type semiconductor). The photo-generated carriers boost the drain current of the transistors as well as bring about the negative threshold voltage shift. Significant enhanced detection performance is achieved under the laser wavelength of 532 nm. The highest photoresponsivity reaches up to 20 A/W, while the photoresponse rise time comes to 10 ms and the fall time comes to approximate 76 ms, which is much faster than trap assisted IGZO visible light detection. The fabricated phototransistors favor the application of visible-light detectors and/or optical switches.

  10. Cave breakdown by vadose weathering.

    Directory of Open Access Journals (Sweden)

    Osborne R. Armstrong L.

    2002-01-01

    Full Text Available Vadose weathering is a significant mechanism for initiating breakdown in caves. Vadose weathering of ore bodies, mineral veins, palaeokarst deposits, non-carbonate keystones and impure, altered or fractured bedrock, which is intersected by caves, will frequently result in breakdown. Breakdown is an active, ongoing process. Breakdown occurs throughout the vadose zone, and is not restricted to large diameter passages, or to cave ceilings. The surfaces of disarticulated blocks are commonly coated, rather than having fresh broken faces, and blocks continue to disintegrate after separating from the bedrock. Not only gypsum, but also hydromagnesite and aragonite are responsible for crystal wedging. It is impossible to study or identify potential breakdown foci by surface surveys alone, in-cave observation and mapping are essential.

  11. Subnanosecond breakdown in high-pressure gases

    Science.gov (United States)

    Naidis, George V.; Tarasenko, Victor F.; Babaeva, Natalia Yu; Lomaev, Mikhail I.

    2018-01-01

    Pulsed discharges in high-pressure gases are of considerable interest as sources of nonequilibrium plasma for various technological applications: pollution control, pumping of laser media, plasma-assisted combustion, etc. Recently, attention has been attracted to the use of subnanosecond voltage fronts, producing diffuse discharges with radii of several millimeters. Such plasma structures, similar to pulsed glow discharges, are of special interest for applications due to quasi-uniformity of plasma parameters in relatively large gas volumes. This review presents the results of experimental and computational study of subnanosecond diffuse discharge formation. A description of generators of short high-voltage pulses with subnanosecond fronts and of discharge setups is given. Diagnostic methods for the measurement of various discharge parameters with high temporal and spatial resolution are described. Obtained experimental data on plasma properties for a wide range of governing factors are discussed. A review of various theoretical approaches used for computational study of the dynamics and structure of fast ionization waves is given; the applicability of conventional fluid streamer models for simulation of subnanosecond ionization waves is discussed. Calculated spatial-temporal profiles of plasma parameters during streamer propagation are presented. The efficiency of subnanosecond discharges for the production of reactive species is evaluated. On the basis of the comparison of simulation results and experimental data the effects of various factors (voltage rise time, polarity, etc.) on discharge characteristics are revealed. The major physical phenomena governing the properties of subnanosecond breakdown are analyzed.

  12. Factors that Influence RF Breakdown in Antenna Systems

    Science.gov (United States)

    Caughman, J. B. O.; Baity, F. W.; Rasmussen, D. A.; Aghazarian, M.; Castano Giraldo, C. H.; Ruzic, David

    2007-11-01

    One of the main power-limiting factors in antenna systems is the maximum voltage that the antenna or vacuum transmission line can sustain before breaking down. The factors that influence RF breakdown are being studied in a resonant 1/4-wavelength section of vacuum transmission line terminated with an open circuit electrode structure. Breakdown can be initiated via electron emission by high electric fields and by plasma formation in the structure, depending on the gas pressure. Recent experiments have shown that a 1 kG magnetic field can influence plasma formation at pressures as low as 8x10-5 Torr at moderate voltage levels (LLC, for the U.S. Dept. of Energy under contract DE-AC05-00OR22725. Work supported by USDOE with grant DE-FG02-04ER54765

  13. Experimental study of the processes accompanying argon breakdown in a long discharge tube at a reduced pressure

    Energy Technology Data Exchange (ETDEWEB)

    Meshchanov, A. V.; Ionikh, Yu. Z., E-mail: y.ionikh@spbu.ru; Shishpanov, A. I.; Kalinin, S. A. [St. Petersburg State University (Russian Federation)

    2016-10-15

    Results are presented from experimental studies of the breakdown stage of a low-pressure discharge (1 and 5 Torr) in a glass tube the length of which (75 cm) is much larger than its diameter (2.8 cm). Breakdowns occurred under the action of positive voltage pulses with an amplitude of up to 9.4 kV and a characteristic rise time of 2–50 μs. The discharge current in the steady-state mode was 10–120 mA. The electrode voltage, discharge current, and radiation from the discharge gap were detected simultaneously. The dynamic breakdown voltage was measured, the prebreakdown ionization wave was recorded, and its velocity was determined. The dependence of the discharge parameters on the time interval between voltage pulses (the socalled “memory effect”) was analyzed. The memory effect manifests itself in a decrease or an increase in the breakdown voltage and a substantial decrease in its statistical scatter. The time interval between pulses in this case can reach 0.5 s. The effect of illumination of the discharge tube with a light source on the breakdown was studied. It is found that the irradiation of the anode region of the tube by radiation with wavelengths of ≤500 nm substantially reduces the dynamic breakdown voltage. Qualitative explanations of the obtained results are offered.

  14. Dramatically enhanced electrical breakdown strength in cellulose nanopaper

    Directory of Open Access Journals (Sweden)

    Jianwen Huang

    2016-09-01

    Full Text Available Electrical breakdown behaviors of nanopaper prepared from nanofibrillated cellulose (NFC were investigated. Compared to conventional insulating paper made from micro softwood fibers, nanopaper has a dramatically enhanced breakdown strength. Breakdown field of nanopaper is 67.7 kV/mm, whereas that of conventional paper is only 20 kV/mm. Air voids in the surface of conventional paper are observed by scanning electron microscope (SEM. Further analyses using mercury intrusion show that pore diameter of conventional paper is around 1.7 μm, while that of nanopaper is below 3 nm. Specific pore size of nanopaper is determined to be approximately 2.8 nm by the gas adsorption technique. In addition, theoretical breakdown strengths of nanopaper and conventional paper are also calculated to evaluate the effect of pore size. It turns out that theoretical values agree well with experimental data, indicating that the improved strength in nanopaper is mainly attributed to the decreased pore size. Due to its outstanding breakdown strength, this study indicates the suitability of nanopaper for electrical insulation in ultra-high voltage convert transformers and other electrical devices.

  15. Evaluation of methods for increasing vacuum breakdown strength

    International Nuclear Information System (INIS)

    Evans, R.D.; Cooke, C.M.; Berman, E.R.

    1977-01-01

    Research to determine the effectiveness of coated and gas shielded cathodes as a means of increasing vacuum breakdown strength under short pulse conditions is reported. A technique for rapidly evaluating large numbers of coatings on small electrodes at relatively low pulse voltage (120 kV or less) and methods for testing larger electrodes and fewer coatings at higher total voltage were developed. Experiments with gas shielded cathodes were also conducted. Results suggest that it may be possible to eliminate prebreakdown current and to double breakdown strength by applying a suitable coating to the cathode. Breakdown stresses in excess of 2 MV/cm were obtained in a 0.5 mm gap with sputtered coatings of alumina, Cr 2 O 3 , and several readily available epoxies. Electrodes two orders of magnitude greater in area were tested, and stresses approaching 1 MV/cm were measured in 5 mm gaps for several epoxies and for alumina. It has further been shown that, because similar trends occurred in the data from large and small experiments, it should be possible to screen potential coatings rapidly and effectively with minimum expenditure using a method similar to that employed for small electrodes at low pulse voltage

  16. Specific features of a single-pulse sliding discharge in neon near the threshold for spark breakdown

    Science.gov (United States)

    Trusov, K. K.

    2017-08-01

    Experimental data on the spatial structure of a single-pulse sliding discharge in neon at voltages below, equal to, and above the threshold for spark breakdown are discussed. The experiments were carried at gas pressures of 30 and 100 kPa and different polarities of the discharge voltage. Photographs of the plasma structure in two discharge chambers with different dimensions of the discharge zone and different thicknesses of an alumina dielectric plate on the surface of which the discharge develops are inspected. Common features of the prebreakdown discharge and its specific features depending on the voltage polarity and gas pressure are analyzed. It is shown that, at voltages below the threshold for spark breakdown, a low-current glow discharge with cathode and anode spots develops in the electrode gap. Above the breakdown threshold, regardless of the voltage polarity, spark channels directed from the cathode to the anode develop against the background of a low-current discharge.

  17. The breakdown and glow phases during the initiation of discharges for lamps

    International Nuclear Information System (INIS)

    Pitchford, L.C.; Peres, I.; Liland, K.B.; Boeuf, J.P.; Gielen, H.

    1997-01-01

    High intensity discharge (HID) lamps are often initiated by the application of one or more short, high-voltage, breakdown pulses superimposed on a 50 or 60 Hz generator voltage. A successful transition from the breakdown event to steady-state operating conditions in HID lamps requires that the lamp-circuit system be adequate to sustain the plasma created during breakdown until the electrodes are heated to thermionic temperatures. In this article, we use a one-dimensional (in the axial direction) transient discharge model to study the conditions needed to sustain the cold-cathode discharge after a breakdown event has occurred. While the application of our one-dimensional model to real lamps is approximate, we find that the model predictions are consistent with experimental results in HID lamps, a few of which are presented here. The main conclusion from this work is that, after breakdown, the voltage necessary to sustain a glow discharge is dependent on the source impedance, the gas composition, and on the plasma density created by the breakdown event. copyright 1997 American Institute of Physics

  18. Statistical Studies of the Electric Breakdown in Nitrogen in the Duration Range of 3 ms-60 min

    Science.gov (United States)

    Gorokhov, V. V.; Karelin, V. I.; Perminov, A. V.; Repin, P. B.

    2018-05-01

    The statistical characteristics of an electric breakdown in the nitrogen in the spike (cathode)-plane gap in the duration range of (3 × 10-3)-3600 s at voltages close to a static breakdown have been studied. It has been found that a probability of a gap breakdown is nonmonotonously distributed over time. The presence of maxima in the probability distribution confirms a contribution of some processes that both stimulate and suppress a breakdown. The typical times of the processes are 30 ms, 10-1 s, and 300 s.

  19. Voltage and partial pressure dependent defect chemistry in (La,Sr)FeO3-δ thin films investigated by chemical capacitance measurements.

    Science.gov (United States)

    Schmid, Alexander; Rupp, Ghislain M; Fleig, Jürgen

    2018-05-03

    La0.6Sr0.4FeO3-δ (LSF) thin films of different thickness were prepared by pulsed laser deposition on yttria stabilized zirconia (YSZ) and characterized by using three electrode impedance spectroscopy. Electrochemical film capacitance was analyzed in relation to oxygen partial pressure (0.25 mbar to 1 bar), DC polarization (0 m to -600 m) and temperature (500 to 650 °C). For most measurement parameters, the chemical bulk capacitance dominates the overall capacitive properties and the corresponding defect chemical state depends solely on the oxygen chemical potential inside the film, independent of atmospheric oxygen pressure and DC polarization. Thus, defect chemical properties (defect concentrations and defect formation enthalpies) could be deduced from such measurements. Comparison with LSF defect chemical bulk data from the literature showed good agreement for vacancy formation energies but suggested larger electronic defect concentrations in the films. From thickness-dependent measurements at lower oxygen chemical potentials, an additional capacitive contribution could be identified and attributed to the LSF|YSZ interface. Deviations from simple chemical capacitance models at high pressures are most probably due to defect interactions.

  20. Voltage and partial pressure dependent defect chemistry in (La,Sr)FeO3–δ thin films investigated by chemical capacitance measurements

    Science.gov (United States)

    Rupp, Ghislain M.; Fleig, Jürgen

    2018-01-01

    La0.6Sr0.4FeO3–δ (LSF) thin films of different thickness were prepared by pulsed laser deposition on yttria stabilized zirconia (YSZ) and characterized by using three electrode impedance spectroscopy. Electrochemical film capacitance was analyzed in relation to oxygen partial pressure (0.25 mbar to 1 bar), DC polarization (0 m to –600 m) and temperature (500 to 650 °C). For most measurement parameters, the chemical bulk capacitance dominates the overall capacitive properties and the corresponding defect chemical state depends solely on the oxygen chemical potential inside the film, independent of atmospheric oxygen pressure and DC polarization. Thus, defect chemical properties (defect concentrations and defect formation enthalpies) could be deduced from such measurements. Comparison with LSF defect chemical bulk data from the literature showed good agreement for vacancy formation energies but suggested larger electronic defect concentrations in the films. From thickness-dependent measurements at lower oxygen chemical potentials, an additional capacitive contribution could be identified and attributed to the LSF|YSZ interface. Deviations from simple chemical capacitance models at high pressures are most probably due to defect interactions. PMID:29671421

  1. Electric properties and carrier multiplication in breakdown sites in multi-crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Schneemann, Matthias; Carius, Reinhard; Rau, Uwe [IEK5-Photovoltaics, Forschungszentrum Jülich, Jülich 52425 (Germany); Kirchartz, Thomas, E-mail: t.kirchartz@fz-juelich.de [IEK5-Photovoltaics, Forschungszentrum Jülich, Jülich 52425 (Germany); Faculty of Engineering and CENIDE, University of Duisburg-Essen, Carl-Benz-Str. 199, Duisburg 47057 (Germany)

    2015-05-28

    This paper studies the effective electrical size and carrier multiplication of breakdown sites in multi-crystalline silicon solar cells. The local series resistance limits the current of each breakdown site and is thereby linearizing the current-voltage characteristic. This fact allows the estimation of the effective electrical diameters to be as low as 100 nm. Using a laser beam induced current (LBIC) measurement with a high spatial resolution, we find carrier multiplication factors on the order of 30 (Zener-type breakdown) and 100 (avalanche breakdown) as new lower limits. Hence, we prove that also the so-called Zener-type breakdown is followed by avalanche multiplication. We explain that previous measurements of the carrier multiplication using thermography yield results higher than unity, only if the spatial defect density is high enough, and the illumination intensity is lower than what was used for the LBIC method. The individual series resistances of the breakdown sites limit the current through these breakdown sites. Therefore, the measured multiplication factors depend on the applied voltage as well as on the injected photocurrent. Both dependencies are successfully simulated using a series-resistance-limited diode model.

  2. High stored-energy breakdown tests on electrodes made of stainless steel, copper, titanium and molybdenum

    Energy Technology Data Exchange (ETDEWEB)

    Esch, H. P. L. de, E-mail: hubert.de-esch@cea.fr; Simonin, A.; Grand, C. [CEA-Cadarache, IRFM, F-13108 St. Paul-lez-Durance (France)

    2015-04-08

    IRFM have conducted resilience tests on electrodes made of Cu, stainless steel 304L, Ti and Mo against breakdowns up to 170 kV and 300 J. The tests of the 10×10 cm{sup 2} electrodes have been performed at an electrode distance d=11 mm under vacuum (P∼5×10{sup −6} mbar). No great difference in voltage holding between the materials could be identified; all materials could reach a voltage holding between 140 and 170 kV over the 11 mm gap, i.e. results scatter within a ±10% band. After exposure to ∼10000 seconds of high-voltage (HV) on-time, having accumulated ∼1000 breakdowns, the electrodes were inspected. The anodes were covered with large and small craters. The rugosity of the anodes had increased substantially, that of the cathodes to a lesser extent. The molybdenum electrodes are least affected, but this does not show in their voltage holding capability. It is hypothesized that penetrating high-energy electrons from the breakdown project heat below the surface of the anode and cause a micro-explosion of material when melting point is exceeded. Polished electrodes have also been tested. The polishing results in a substantially reduced breakdown rate in the beginning, but after having suffered a relatively small number (∼100) of breakdowns, the polished electrodes behaved the same as the unpolished ones.

  3. Voltage-Controlled Topotactic Phase Transition in Thin-Film SrCoOx Monitored by In Situ X-ray Diffraction.

    Science.gov (United States)

    Lu, Qiyang; Yildiz, Bilge

    2016-02-10

    Topotactic phase transition of functional oxides induced by changes in oxygen nonstoichiometry can largely alter multiple physical and chemical properties, including electrical conductivity, magnetic state, oxygen diffusivity, and electrocatalytic reactivity. For tuning these properties reversibly, feasible means to control oxygen nonstoichiometry-dependent phase transitions in functional oxides are needed. This paper describes the use of electrochemical potential to induce phase transition in strontium cobaltites, SrCoOx (SCO) between the brownmillerite (BM) phase, SrCoO₂.₅, and the perovskite (P) phase, SrCoO₃₋δ. To monitor the structural evolution of SCO, in situ X-ray diffraction (XRD) was performed on an electrochemical cell having (001) oriented thin-film SrCoOx as the working electrode on a single crystal (001) yttria-stabilized zirconia electrolyte in air. In order to change the effective pO₂ in SCO and trigger the phase transition from BM to P, external electrical biases of up to 200 mV were applied across the SCO film. The phase transition from BM to P phase could be triggered at a bias as low as 30 mV, corresponding to an effective pO₂ of 1 atm at 500 °C. The phase transition was fully reversible and the epitaxial film quality was maintained after reversible phase transitions. These results demonstrate the use of electrical bias to obtain fast and easily accessible switching between different phases as well as distinct physical and chemical properties of functional oxides as exemplified here for SCO.

  4. Numerical Study on Alternating Current Breakdown Mechanism Between Sphere-Sphere Electrodes in Transformer Oil-Based Magnetic Nanofluids.

    Science.gov (United States)

    Lee, Won-Ho; Lee, Jong-Chul

    2018-09-01

    A numerical simulation was developed for magnetic nanoparticles in a liquid dielectric to investigate the AC breakdown voltage of the magnetic nanofluids according to the volume concentration of the magnetic nanoparticles. In prior research, we found that the dielectric breakdown voltage of the transformer oil-based magnetic nanofluids was positively or negatively affected according to the amount of magnetic nanoparticles under a testing condition of dielectric fluids, and the trajectory of the magnetic nanoparticles in a fabricated chip was visualized to verify the related phenomena via measurements and computations. In this study, a numerical simulation of magnetic nanoparticles in an insulating fluid was developed to model particle tracing for AC breakdown mechanisms happened to a sphere-sphere electrode configuration and to propose a possible mechanism regarding the change in the breakdown strength due to the behavior of the magnetic nanoparticles with different applied voltages.

  5. Experimental breakdown of selected anodized aluminum samples in dilute plasmas

    Science.gov (United States)

    Grier, Norman T.; Domitz, Stanley

    1992-01-01

    Anodized aluminum samples representative of Space Station Freedom structural material were tested for electrical breakdown under space plasma conditions. In space, this potential arises across the insulating anodized coating when the spacecraft structure is driven to a negative bias relative to the external plasma potential due to plasma-surface interaction phenomena. For anodized materials used in the tests, it was found that breakdown voltage varied from 100 to 2000 volts depending on the sample. The current in the arcs depended on the sample, the capacitor, and the voltage. The level of the arc currents varied from 60 to 1000 amperes. The plasma number density varied from 3 x 10 exp 6 to 10 exp 3 ions per cc. The time between arcs increased as the number density was lowered. Corona testing of anodized samples revealed that samples with higher corona inception voltage had higher arcing inception voltages. From this it is concluded that corona testing may provide a method of screening the samples.

  6. Silver nanoparticle formation in thin oxide layer on silicon by silver-negative-ion implantation for Coulomb blockade at room temperature

    International Nuclear Information System (INIS)

    Tsuji, Hiroshi; Arai, Nobutoshi; Matsumoto, Takuya; Ueno, Kazuya; Gotoh, Yasuhito; Adachi, Kouichiro; Kotaki, Hiroshi; Ishikawa, Junzo

    2004-01-01

    Formation of silver nanoparticles formed by silver negative-ion implantation in a thin SiO 2 layer and its I-V characteristics were investigated for development single electron devices. In order to obtain effective Coulomb blockade phenomenon at room temperature, the isolated metal nanoparticles should be in very small size and be formed in a thin insulator layer such as gate oxide on the silicon substrate. Therefore, conditions of a fine particles size, high particle density and narrow distribution should be controlled at their formation without any electrical breakdown of the thin insulator layer. We have used a negative-ion implantation technique with an advantage of 'charge-up free' for insulators, with which no breakdown of thin oxide layer on Si was obtained. In the I-V characteristics with Au electrode, the current steps were observed with a voltage interval of about 0.12 V. From the step voltage the corresponded capacitance was calculated to be 0.7 aF. In one nanoparticle system, this value of capacitance could be given by a nanoparticle of about 3 nm in diameter. This consideration is consistent to the measured particle size in the cross-sectional TEM observation. Therefore, the observed I-V characteristics with steps are considered to be Coulomb staircase by the Ag nanoparticles

  7. New phenomenology of gas breakdown in DC and RF fields

    Science.gov (United States)

    Petrović, Zoran Lj; Sivoš, Jelena; Savić, Marija; Škoro, Nikola; Radmilović Radenović, Marija; Malović, Gordana; Gocić, Saša; Marić, Dragana

    2014-05-01

    This paper follows a review lecture on the new developments in the field of gas breakdown and low current discharges, usually covered by a form of Townsend's theory and phenomenology. It gives an overview of a new approach to identifying which feedback agents provide breakdown, how to model gas discharge conditions and reconcile the results with binary experiments and how to employ that knowledge in modelling gas discharges. The next step is an illustration on how to record volt-ampere characteristics and use them on one hand to obtain the breakdown voltage and, on the other, to identify the regime of operation and model the secondary electron yields. The second aspect of this section concerns understanding the different regimes, their anatomy, how those are generated and how free running oscillations occur. While temporal development is the most useful and interesting part of the new developments, the difficulty of presenting the data in a written form precludes an easy publication and discussion. Thus, we shall only mention some of the results that stem from these measurements. Most micro discharges operate in DC albeit with complex geometries. Thus, parallel plate micro discharge measurements were needed to establish that Townsend's theory, with all its recent extensions, is still valid until some very small gaps. We have shown, for example, how a long-path breakdown puts in jeopardy many experimental observations and why a flat left-hand side of the Paschen curve often does not represent good physics. We will also summarize a kinetic representation of the RF breakdown revealing a somewhat more complex picture than the standard model. Finally, we will address briefly the breakdown in radially inhomogeneous conditions and how that affects the measured properties of the discharge. This review has the goal of summarizing (rather than developing details of) the current status of the low-current DC discharges formation and operation as a discipline which, in spite of

  8. High gradient RF breakdown study

    International Nuclear Information System (INIS)

    Laurent, L.; Luhmann, N.C. Jr.; Scheitrum, G.; Hanna, S.; Pearson, C.; Phillips, R.

    1998-01-01

    Stanford Linear Accelerator Center and UC Davis have been investigating high gradient RF breakdown and its effects on pulse shortening in high energy microwave devices. RF breakdown is a critical issue in the development of high power microwave sources and next generation linear accelerators since it limits the output power of microwave sources and the accelerating gradient of linacs. The motivation of this research is to find methods to increase the breakdown threshold level in X-band structures by reducing dark current. Emphasis is focused on improved materials, surface finish, and cleanliness. The test platform for this research is a traveling wave resonant ring. A 30 MW klystron is employed to provide up to 300 MW of traveling wave power in the ring to trigger breakdown in the cavity. Five TM 01 cavities have previously been tested, each with a different combination of surface polish and/or coating. The onset of breakdown was extended up to 250 MV/m with a TiN surface finish, as compared to 210 MV/m for uncoated OFE copper. Although the TiN coating was helpful in depressing the field emission, the lowest dark current was obtained with a 1 microinch surface finish, single-point diamond-turned cavity

  9. Understanding and Prevention of Transient Voltages and Dielectric Breakdown in High Voltage Battery Systems

    Science.gov (United States)

    2017-07-31

    integrated into unique power system architectures that employ energy generation and storage capable of working together to supply the intermittent ...unidirectional and bidirectional TVS diodes is seen in Figure 3. TVS diodes are known for having fast switch on times but their switch off times are...switch in the circuit, simulating the fast changes in current in the profile of interest. The simulation is run for 50 ms and the initial condition of

  10. Breakdown of coupling dielectrics for Si microstrip detectors

    International Nuclear Information System (INIS)

    Candelori, A.; Paccagnella, A.; Padova Univ.; Saglimbeni, G.

    1999-01-01

    Double-layer coupling dielectrics for AC-coupled Si microstrip detectors have been electrically characterized in order to determine their performance in a radiation-harsh environment, with a focus on the dielectric breakdown. Two different dielectric technologies have been investigated: SiO 2 /TEOS and SiO 2 /Si 3 N 4 . Dielectrics have been tested by using a negative gate voltage ramp of 0.2 MV/(cm·s). The metal/insulator/Si I-V characteristics show different behaviours depending on the technology. The extrapolated values of the breakdown field for unirradiated devices are significantly higher for SiO 2 /Si 3 N 4 dielectrics, but the data dispersion is lower for SiO 2 /TEOS devices. No significant variation of the breakdown field has been measured after a 10 Mrad (Si) γ irradiation for SiO 2 /Si 3 N 4 dielectrics. Finally, the SiO 2 /Si 3 N 4 DC conduction is enhanced if a positive gate voltage ramp is applied with respect to the negative one, due to the asymmetric conduction of the double-layer dielectric

  11. Low voltage arc formation in railguns

    Science.gov (United States)

    Hawke, R.S.

    1985-08-05

    A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

  12. High voltage investigations for ITER coils

    International Nuclear Information System (INIS)

    Fink, S.; Fietz, W.H.

    2006-01-01

    The superconducting ITER magnets will be excited with high voltage during operation and fast discharge. Because the coils are complex systems the internal voltage distribution can differ to a large extent from the ideal linear voltage distribution. In case of fast excitations internal voltages between conductor and radial plate of a TF coil can be even higher than the terminal voltage of 3.5 kV to ground which appears during a fast discharge without a fault. Hence the determination of the transient voltage distribution is important for a proper insulation co-ordination and will provide a necessary basis for the verification of the individual insulation design and the choice of test voltages and waveforms. Especially the extent of internal overvoltages in case of failures, e. g. malfunction of discharge units and / or arcing is of special interest. Transient calculations for the ITER TF coil system have been performed for fast discharge and fault scenarios to define test voltages for ITER TF. The conductor and radial plate insulation of the ITER TF Model Coil were exposed at room temperature to test voltages derived from the results from these calculations. Breakdown appeared during the highest AC voltage step. A fault scenario for the TF fast discharge system is presented where one fault triggers a second fault, leading to considerable voltage stress. In addition a FEM model of Poloidal Field Coil 3 for the determination of the parameters of a detailed network model is presented in order to prepare detailed investigations of the transient voltage behaviour of the PF coils. (author)

  13. 50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

    KAUST Repository

    Emira, Ahmed

    2012-10-06

    In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

  14. 50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

    KAUST Repository

    Emira, Ahmed; AbdelGhany, M.; Elsayed, M.; Elshurafa, Amro M.; Sedky, S.; Salama, Khaled N.

    2012-01-01

    In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

  15. Vortex breakdown incipience: Theoretical considerations

    Science.gov (United States)

    Berger, Stanley A.; Erlebacher, Gordon

    1992-01-01

    The sensitivity of the onset and the location of vortex breakdowns in concentrated vortex cores, and the pronounced tendency of the breakdowns to migrate upstream have been characteristic observations of experimental investigations; they have also been features of numerical simulations and led to questions about the validity of these simulations. This behavior seems to be inconsistent with the strong time-like axial evolution of the flow, as expressed explicitly, for example, by the quasi-cylindrical approximate equations for this flow. An order-of-magnitude analysis of the equations of motion near breakdown leads to a modified set of governing equations, analysis of which demonstrates that the interplay between radial inertial, pressure, and viscous forces gives an elliptic character to these concentrated swirling flows. Analytical, asymptotic, and numerical solutions of a simplified non-linear equation are presented; these qualitatively exhibit the features of vortex onset and location noted above.

  16. Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Yanfeng; Pan, Chengbin; Hui, Fei; Shi, Yuanyuan; Lanza, Mario, E-mail: mlanza@suda.edu.cn [Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123 (China); Zhang, Meiyun; Long, Shibing [Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Lian, Xiaojuan; Miao, Feng [National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Larcher, Luca [DISMI, Università di Modena e Reggio Emilia, 42122 Reggio Emilia (Italy); Wu, Ernest [IBM Research Division, Essex Junction, Vermont 05452 (United States)

    2016-01-04

    Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.

  17. Research of Dielectric Breakdown Micro fluidic Sampling Chip

    International Nuclear Information System (INIS)

    Jiang, F.; Lei, Y.; Yu, J.

    2013-01-01

    Micro fluidic chip is mainly driven electrically by external electrode and array electrode, but there are certain disadvantages in both of ways, which affect the promotion and application of micro fluidic technology. This paper discusses a scheme that uses the conductive solution in a microchannel made by PDMS, replacing electrodes and the way of dielectric breakdown to achieve microfluidic chip driver. It could reduce the driving voltage and simplify the chip production process. To prove the feasibility of this method, we produced a micro fluidic chip used in PDMS material with the lithography technology and experimented it. The results showed that using the dielectric breakdown to achieve microfluidic chip driver is feasible, and it has certain application prospect.

  18. Partial discharges and breakdown in C3F8

    International Nuclear Information System (INIS)

    Koch, M; Franck, C M

    2014-01-01

    Traditional search processes of gases or gas mixtures for replacing SF 6 involve time consuming measurements of partial discharges and breakdown behaviour for several voltage waveforms and different field configurations. Recently a model for prediction of this behaviour for SF 6 was described in literature. The model only requires basic properties of the gas such as the critical field strength and the effective ionization coefficient, which can be obtained by swarm parameter measurements, and thermodynamic properties, which can be calculated. In this paper, we show for the well-known and electronegative gas octafluoropropane (C 3 F 8 ) that it is possible to transfer the model developed for SF 6 to this gas to describe the breakdown behaviour of C 3 F 8 . Thus the model can be beneficial in the screening process of new insulation gases. (paper)

  19. Partial discharges and breakdown in C3F8

    Science.gov (United States)

    Koch, M.; Franck, C. M.

    2014-10-01

    Traditional search processes of gases or gas mixtures for replacing SF6 involve time consuming measurements of partial discharges and breakdown behaviour for several voltage waveforms and different field configurations. Recently a model for prediction of this behaviour for SF6 was described in literature. The model only requires basic properties of the gas such as the critical field strength and the effective ionization coefficient, which can be obtained by swarm parameter measurements, and thermodynamic properties, which can be calculated. In this paper, we show for the well-known and electronegative gas octafluoropropane (C3F8) that it is possible to transfer the model developed for SF6 to this gas to describe the breakdown behaviour of C3F8. Thus the model can be beneficial in the screening process of new insulation gases.

  20. Edge states and integer quantum Hall effect in topological insulator thin films.

    Science.gov (United States)

    Zhang, Song-Bo; Lu, Hai-Zhou; Shen, Shun-Qing

    2015-08-25

    The integer quantum Hall effect is a topological state of quantum matter in two dimensions, and has recently been observed in three-dimensional topological insulator thin films. Here we study the Landau levels and edge states of surface Dirac fermions in topological insulators under strong magnetic field. We examine the formation of the quantum plateaux of the Hall conductance and find two different patterns, in one pattern the filling number covers all integers while only odd integers in the other. We focus on the quantum plateau closest to zero energy and demonstrate the breakdown of the quantum spin Hall effect resulting from structure inversion asymmetry. The phase diagrams of the quantum Hall states are presented as functions of magnetic field, gate voltage and chemical potential. This work establishes an intuitive picture of the edge states to understand the integer quantum Hall effect for Dirac electrons in topological insulator thin films.

  1. Investigations of dc breakdown fields

    CERN Document Server

    Ramsvik, Trond; Reginelli, Alessandra; Taborelli, Mauro

    2006-01-01

    The need for high accelerating gradients for the future 30 GHz multi-TeV e+e- Compact Linear Collider (CLIC) at CERN has triggered a comprehensive study of DC breakdown fields of metals in UHV. The study shows that molybdenum (Mo), tungsten (W), titanium (Ti) and TiVAl reach high breakdown fields, and are thus good candidates for the iris material of CLIC structures. A significant decrease in the saturated breakdown field (Esat) is observed for molybdenum and tungsten when exposed to air. Specifically, at air pressures of 10-5 mbar, the decrease in Esat is found to be 50% and 30% for molybdenum and tungsten, respectively. In addition, a 30% decrease is found when molybdenum is conditioned with a CO pressure of ~1-10-5 mbar. Surface analysis measurements and breakdown conditioning in O2 ambience imply that the origin of the decrease in Esat is closely linked to oxide formation on the cathode surface. "Ex-situ" treatments by ion bombardment of molybdenum effectively reduce the oxide layers, and improve the brea...

  2. Post-breakdown secondary discharges at the electrode/dielectric interface of a cylindrical barrier discharge

    Science.gov (United States)

    Carman, Robert; Ward, Barry; Kane, Deborah

    2011-10-01

    The electrical breakdown characteristics of a double-walled cylindrical dielectric barrier discharge (DBD) lamp with a neon buffer gas under pulsed voltage excitation have been investigated. Following the formation of plasma in the main discharge gap, we have observed secondary breakdown phenomena at the inner and outer mesh electrode/dielectric interfaces under specific operating conditions. Plasma formation at these interfaces is investigated by monitoring the Ozone production rate in controlled flows of ultra high purity oxygen together with the overall electrical voltage-charge characteristics of the lamp. The results show that this secondary breakdown only occurs after the main discharge plasma has been established, and that significant electrical power may be dissipated in generating these spurious secondary plasmas. The results are important with regards to optimising the design and identifying efficient operating regimes of DBD based devices that employ mesh-type or wire/strip electrodes.

  3. Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

    International Nuclear Information System (INIS)

    Bacchetta, N.; Bisello, D.; Candelori, A.; Rold, M. Da; Descovich, M.; Kaminski, A.; Messineo, A.; Rizzo, F.; Verzellesi, G.

    2001-01-01

    To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC

  4. Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

    CERN Document Server

    Bacchetta, N; Candelori, A; Da Rold, M; Descovich, M; Kaminski, A; Messineo, A; Rizzo, F; Verzellesi, G

    2001-01-01

    To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC. (3 refs).

  5. 39GHz ECRH system for breakdown studies on the TCA tokamak

    International Nuclear Information System (INIS)

    Pochelon, A.; Goodman, T.; Whaley, D.; Tran, M.Q.; Reinhard, D.; Perrenoud, A.; Joedicke, B.; Mathews, H.G.; Kasparek, W.; Thumm, M.

    1990-01-01

    The design construction and first operation of a 39GHz ECRH system (300 kW, 100 ms) for low loop-voltage breakdown and startup-assist experiments on the TCA tokamak is described. (author) 5 refs., 6 figs., 1 tab

  6. Gauge theories as theories of spontaneous breakdown

    International Nuclear Information System (INIS)

    Ivanov, E.A.; Ogievetsky, V.I.

    1976-01-01

    Any gauge theory is proved to arise from spontaneous breakdown of symmetry under certain infinite parameter group, the corresponding gauge field being the Goldstone field by which this breakdown is accompanied

  7. Breakdown study of dc silicon micro-discharge devices

    International Nuclear Information System (INIS)

    Schwaederlé, L; Kulsreshath, M K; Lefaucheux, P; Tillocher, T; Dussart, R; Overzet, L J

    2012-01-01

    The influence of geometrical and operating parameters on the electrical characteristics of dc microcavity discharges provides insight into their controlling physics. We present here results of such a study on silicon-based microcavity discharge devices carried out in helium at pressure ranging from 100 to 1000 Torr. Different micro-reactor configurations were measured. The differences include isolated single cavities versus arrays of closely spaced cavities, various cavity geometries (un-etched as well as isotropically and anisotropically etched), various dimensions (100 or 150 µm cavity diameter and 0-150 µm depth). The electrode gap was kept constant in all cases at approximately 6 µm. The applied electric field reaches 5 × 10 7 V m -1 which results in current and power densities up to 2 A cm -2 and 200 kW cm -3 , respectively. The number of microcavities and the microcavity depth are shown to be the most important geometrical parameters for predicting breakdown and operation of microcavity devices. The probability of initiatory electron generation which is volume dependent and the electric field strength which is depth dependent are, respectively, considered to be responsible. The cavity shape (isotropic/anisotropic) and diameter had no significant influence. The number of micro-discharges that could be ignited depends on the rate of voltage rise and pressure. Larger numbers ignite at lower frequency and pressure. In addition, the voltage polarity has the largest influence on the electrical characteristics of the micro-discharge of all parameters, which is due to both the asymmetric role of electrodes as electron emitter and the non-uniformity of the electric field resulting in different ionization efficiencies. The qualitative shape of all breakdown voltage versus pressure curves can be explained in terms of the distance over which the discharge breakdown effectively occurs as long as one understand that this distance can depend on pressure. (paper)

  8. Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices.

    Science.gov (United States)

    Pejović, Milić M; Denić, Dragan B; Pejović, Momčilo M; Nešić, Nikola T; Vasović, Nikola

    2010-10-01

    This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven by TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.

  9. Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices

    Energy Technology Data Exchange (ETDEWEB)

    Pejovic, Milic M.; Denic, Dragan B.; Pejovic, Momcilo M.; Nesic, Nikola T.; Vasovic, Nikola [Faculty of Electronic Engineering, University of Nis, Aleksandra Medvedeva 14, 18000 Nis (Serbia)

    2010-10-15

    This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven by TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.

  10. Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices

    International Nuclear Information System (INIS)

    Pejovic, Milic M.; Denic, Dragan B.; Pejovic, Momcilo M.; Nesic, Nikola T.; Vasovic, Nikola

    2010-01-01

    This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven by TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.

  11. Characterization and in situ fluorescence diagnostic of the deposition of YBa2Cu3O7-x thin films by pseudo-spark electron beam ablation

    International Nuclear Information System (INIS)

    Jiang, Q.D.; Matacotta, F.C.; Masciarelli, G.; Fuso, F.; Arimondo, E.; Sandrin, G.

    1992-12-01

    The pseudo-spark electron beam ablation (PSA) technique is a comparatively simple and inexpensive method to deposit thin films of oxide materials. The effect of the electron beam power density on the efficiency of the PSA is studied. Results concerning the optimization of the deposition process of high quality superconducting YBa 2 Cu 3 O 7-x thin films on single crystal SrTiO 3 substrates are reported. Correlation between processing parameters and superconducting properties of the thin films are presented: in particular, the effects of the break-down voltage of the pseudo-spark and geometrical arrangement of the target-substrate-beam system on the T c of the resulting films. In situ spectral analysis of the radiative emission from the plasma plume has been performed at different distances from the surface of the target and at different break-down voltages of the pseudo-spark. The role of the oxygen pressure in the PSA process, which could be one order of magnitude less than that for a typical laser ablation system, is discussed. (author). 17 refs, 7 figs, 1 tab

  12. An automatic method to analyze the Capacity-Voltage and Current-Voltage curves of a sensor

    CERN Document Server

    AUTHOR|(CDS)2261553

    2017-01-01

    An automatic method to perform Capacity versus voltage analysis for all kind of silicon sensor is provided. It successfully calculates the depletion voltage to unirradiated and irradiated sensors, and with measurements with outliers or reaching breakdown. It is built using C++ and using ROOT trees with an analogous skeleton as TRICS, where the data as well as the results of the ts are saved, to make further analysis.

  13. A novel high voltage start up circuit for an integrated switched mode power supply

    Energy Technology Data Exchange (ETDEWEB)

    Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

  14. Voltage regulating circuit

    NARCIS (Netherlands)

    2005-01-01

    A voltage regulating circuit comprising a rectifier (2) for receiving an AC voltage (Vmains) and for generating a rectified AC voltage (vrec), and a capacitor (3) connected in parallel with said rectified AC voltage for providing a DC voltage (VDC) over a load (5), characterized by a unidirectional

  15. A Study of the Dielectric Breakdown of SiO2 Films on Si by the Self- Quenching Technique

    Science.gov (United States)

    1974-10-01

    Cambell . Much of the early work on the breakdown of oxide films in 2 1 Q MOS structures was done by N. Klein and his coworkers...Electron Physics, 26, Academic Press. New York (1969). P. J. Harrop and D. S. Cambell , "Dielectric Properties of Thin Films," Handbook of Thin Film

  16. Pb(Zr,TiO3 (PZT Thin Film Sensors for Fully-Integrated, Passive Telemetric Transponders

    Directory of Open Access Journals (Sweden)

    Richard X. FU

    2011-04-01

    Full Text Available The great potential of taking advantages of PZT in a single chip to achieve inexpensive, fully-integrated, passive telemetric transponders has been shown in this paper. The processes for the sputter deposition of Pb(Zr,TiO3 (PZT thin films from two different composite targets on both Si and c-plane sapphire substrates have been demonstrated. PZT thin films have been deposited by sputter technique. PZT films were deposited onto substrates (Si [(100 Cz wafer] and c-plane sapphire (0001//Ti//Pt followed by sputter-deposited Pt top electrodes. X-ray diffraction results showed that both sputtered PZT films were textured along the [110] direction. The degree of preference for the [110] direction was greater on sapphire substrate where the intensity of that peak is seen to be larger compared to the intensity one Si substrate. TEM data revealed that both sputtered PZT films were polycrystalline in nature. Selected area diffraction (SAD pattern showed that the degree of disorientation between the crystallites was smaller on sapphire substrate compared to on Si substrate, which confirmed the results from the XRD. The remnant polarization Pr on sapphire substrate was larger than on Si’s. The leakage current for the 11 % Pb target sputtered film was much less than 22 % Pb target sputtered film. The breakdown voltage on sapphire substrate was the best. However, for the 11 % Pb target sputtered film’s breakdown voltage was much higher than 22 % Pb target sputtered film.

  17. Individual breakdown of pension rights

    CERN Multimedia

    2016-01-01

    You should have recently received, via email, your “Individual breakdown of pension rights”.   Please note that: the calculation was based on data as at 1st July 2016, as at 1st September 2016, CERN will introduce a new career structure; the salary position will now be expressed as a percentage of a midpoint of a grade.   We would like to draw your attention to the fact that your pension rights will remain unchanged. Benefits Service CERN Pension Fund

  18. CMOS-compatible high-voltage integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Parpia, Z

    1988-01-01

    Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

  19. Dielectric breakdown and healing of anodic oxide films on aluminium under single pulse anodizing

    International Nuclear Information System (INIS)

    Sah, Santosh Prasad; Tatsuno, Yasuhiro; Aoki, Yoshitaka; Habazaki, Hiroki

    2011-01-01

    Research highlights: → We examined dielectric breakdown of anodic alumina by single pulse anodizing. → Current transients and morphology of discharge channels are dependent upon electrolyte and voltage. → There is a good correlation between current transient and morphology of discharge channel. → Healing of open discharge pores occurs in alkaline silicate, but not in pentaborate electrolyte. - Abstract: Single pulse anodizing of aluminium micro-electrode has been employed to study the behaviour of dielectric breakdown and subsequent oxide formation on aluminium in alkaline silicate and pentaborate electrolytes. Current transients during applying pulse voltage have been measured, and surface has been observed by scanning electron microscopy. Two types of current transients are observed, depending on the electrolyte and applied voltage. There is a good correlation between the current transient behaviour and the shape of discharge channels. In alkaline silicate electrolyte, circular open pores are healed by increasing the pulse width, but such healing is not obvious in pentaborate electrolyte.

  20. Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

    International Nuclear Information System (INIS)

    Zervos, Ch; Adikimenakis, A; Bairamis, A; Kostopoulos, A; Kayambaki, M; Tsagaraki, K; Konstantinidis, G; Georgakilas, A

    2016-01-01

    The current instabilities of high electron mobility transistors (HEMTs), based on thin double AlN/GaN/AlN heterostructures (∼0.5 μm total thickness), directly grown on sapphire substrates, have been analyzed and compared for different AlN top barrier thicknesses. The structures were capped by 1 nm GaN and non-passivated 1 μm gate-length devices were processed. Pulsed I–V measurements resulted in a maximum cold pulsed saturation current of 1.4 A mm −1 at a gate-source voltage of +3 V for 3.7 nm AlN thickness. The measured gate and drain lag for 500 ns pulse-width varied between 6%–12% and 10%–18%, respectively. Furthermore, a small increase in the threshold voltage was observed for all the devices, possibly due to the trapping of electrons under the gate contact. The off-state breakdown voltage of V br  = 70 V, for gate-drain spacing of 2 μm, was approximately double the value measured for a single AlN/GaN HEMT structure grown on a thick GaN buffer layer. The results suggest that the double AlN/GaN/AlN heterostructures may offer intrinsic advantages for the breakdown and current stability characteristics of high current HEMTs. (paper)

  1. Source of high-voltage power supply for ozone generators at glow discharge

    International Nuclear Information System (INIS)

    Bruev, A.A.; Golota, V.I.; Zavada, L.M.; Taran, G.V.

    2000-01-01

    High-voltage power supply source on quasi-resonance inverter base which works at direct current regime is described. This source forms 20 kV voltage with 0 - 10 mA current regulation. It protects the source from current break-downs and feeds ozone generators at glow discharge

  2. Water surface deformation in strong electrical fields and its influence on electrical breakdown in a metal pin-water electrode system

    International Nuclear Information System (INIS)

    Bruggeman, Peter; Graham, Leigh; Groote, Joris de; Vierendeels, Jan; Leys, Christophe

    2007-01-01

    Electrical breakdown and water surface deformation in a metal pin-water electrode system with dc applied voltages is studied for small inter-electrode distances (2-12 mm). The radius of curvature of the metal pin is 0.5 cm to exclude corona before breakdown at these small inter-electrode spacings. Calculations of the water surface deformation as a function of the applied voltage and initial inter-electrode spacing are compared with measurements of the water elevation. For distances smaller than 7 mm the calculated stability limit of the water surface corresponds with the experimentally obtained breakdown voltage. It is proved with fast CCD images and calculations of the electrical field distribution that the water surface instability triggers the electrical breakdown in this case. The images show that at breakdown the water surface has a Taylor cone-like shape. At inter-electrode distance of 7 mm and larger the breakdown voltage is well below the water stability limit and the conductive channel at breakdown is formed between the pin electrode and the static water surface. Both cases are discussed and compared

  3. DC-driven plasma gun: self-oscillatory operation mode of atmospheric-pressure helium plasma jet comprised of repetitive streamer breakdowns

    Science.gov (United States)

    Wang, Xingxing; Shashurin, Alexey

    2017-02-01

    This paper presents and studies helium atmospheric pressure plasma jet comprised of a series of repetitive streamer breakdowns, which is driven by pure DC high voltage (self-oscillatory behavior). The repetition frequency of the breakdowns is governed by the geometry of discharge electrodes/surroundings and gas flow rate. Each next streamer is initiated when the electric field on the anode tip recovers after the previous breakdown and reaches the breakdown threshold value of about 2.5 kV cm-1. One type of the helium plasma gun designed using this operational principle is demonstrated. The gun operates on about 3 kV DC high voltage and is comprised of the series of the repetitive streamer breakdowns at a frequency of about 13 kHz.

  4. Experimental validation of prototype high voltage bushing

    Science.gov (United States)

    Shah, Sejal; Tyagi, H.; Sharma, D.; Parmar, D.; M. N., Vishnudev; Joshi, K.; Patel, K.; Yadav, A.; Patel, R.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A.

    2017-08-01

    Prototype High voltage bushing (PHVB) is a scaled down configuration of DNB High Voltage Bushing (HVB) of ITER. It is designed for operation at 50 kV DC to ensure operational performance and thereby confirming the design configuration of DNB HVB. Two concentric insulators viz. Ceramic and Fiber reinforced polymer (FRP) rings are used as double layered vacuum boundary for 50 kV isolation between grounded and high voltage flanges. Stress shields are designed for smooth electric field distribution. During ceramic to Kovar brazing, spilling cannot be controlled which may lead to high localized electrostatic stress. To understand spilling phenomenon and precise stress calculation, quantitative analysis was performed using Scanning Electron Microscopy (SEM) of brazed sample and similar configuration modeled while performing the Finite Element (FE) analysis. FE analysis of PHVB is performed to find out electrical stresses on different areas of PHVB and are maintained similar to DNB HV Bushing. With this configuration, the experiment is performed considering ITER like vacuum and electrical parameters. Initial HV test is performed by temporary vacuum sealing arrangements using gaskets/O-rings at both ends in order to achieve desired vacuum and keep the system maintainable. During validation test, 50 kV voltage withstand is performed for one hour. Voltage withstand test for 60 kV DC (20% higher rated voltage) have also been performed without any breakdown. Successful operation of PHVB confirms the design of DNB HV Bushing. In this paper, configuration of PHVB with experimental validation data is presented.

  5. Degradation characteristics of 2G HTS tapes with respect to an electrical breakdown

    International Nuclear Information System (INIS)

    Kang, Jong O; Lee, On You; Mo, Young Kyu; Kim, Jun Il; Bang, Seung Min; Lee, Hong Seok; Kang, Hyoung Ku; Lee, Jae Hun; Jang, Cheol Yeong

    2015-01-01

    The electrical insulation design for a superconducting coil system is important for developing high voltage superconducting apparatuses. Also, the degraded characteristics of superconducting tapes due to an electrical breakdown should be considered for superconducting coils design. In this study, the degradation characteristics of 2G high temperature superconducting (HTS) tapes were studied with respect to electrical breakdown tests. The degradation tests of 2G HTS tapes were performed with various stabilizer materials. The degradation characteristics of 2G HTS tapes such as critical current(Ic) and index number were observed by performing electrical breakdown tests. It was found that the characteristics such as Ic and index number can be degraded by an electrical breakdown. Moreover, it was concluded that the degradation characteristics of 2G HTS tapes were affected by a stabilizer material and applied breakdown voltage. The cross sectional view of 2G HTS tapes was observed by using a scanning electron microscope (SEM). As results, it is found that the degradation characteristics of 2G HTS tapes are concerned with hardness and electrical resistivity of stabilizer layers

  6. The breakdown of COSMOS 1402

    International Nuclear Information System (INIS)

    Westerlund, E.A.

    1983-01-01

    Sections of the satellite COSMOS 1402 containing radioactive materials disintegrated in the atmosphere over the Indian and Atlantic oceans Janyary/February 1983. Having the COSMOS 954 incident in mind and taking account of the fact that several satellite orbits crossed Norwegian territory, some preparedness measures were implemented prior to the break-down. The report describes the functions and experiences of an ad hoc satellite counsil which was appointed to take care of data collection, informaton to the public and planning for emergency actions. (RF)

  7. Voltage control of ferromagnetic resonance

    Directory of Open Access Journals (Sweden)

    Ziyao Zhou

    2016-06-01

    Full Text Available Voltage control of magnetism in multiferroics, where the ferromagnetism and ferroelectricity are simultaneously exhibiting, is of great importance to achieve compact, fast and energy efficient voltage controllable magnetic/microwave devices. Particularly, these devices are widely used in radar, aircraft, cell phones and satellites, where volume, response time and energy consumption is critical. Researchers realized electric field tuning of magnetic properties like magnetization, magnetic anisotropy and permeability in varied multiferroic heterostructures such as bulk, thin films and nanostructure by different magnetoelectric (ME coupling mechanism: strain/stress, interfacial charge, spin–electromagnetic (EM coupling and exchange coupling, etc. In this review, we focus on voltage control of ferromagnetic resonance (FMR in multiferroics. ME coupling-induced FMR change is critical in microwave devices, where the electric field tuning of magnetic effective anisotropic field determines the tunability of the performance of microwave devices. Experimentally, FMR measurement technique is also an important method to determine the small effective magnetic field change in small amount of magnetic material precisely due to its high sensitivity and to reveal the deep science of multiferroics, especially, voltage control of magnetism in novel mechanisms like interfacial charge, spin–EM coupling and exchange coupling.

  8. ["Nervous breakdown": a diagnostic characterization study].

    Science.gov (United States)

    Salmán, E; Carrasco, J L; Liebowitz, M; Díaz Marsá, M; Prieto, R; Jusino, C; Cárdenas, D; Klein, D

    1997-01-01

    An evaluation was made of the influence of different psychiatric co-morbidities on the symptoms of the disorder popularly known as "ataque de nervios" (nervous breakdown) among the US Hispanic population. Using a self-completed instrument designed specially for both traditional nervous breakdown and for panic symptoms, and structured or semi-structured psychiatric interviews for Axis I disorders, and evaluation was made of Hispanic subjects who sought treatment for anxiety in a clinic (n = 156). This study centered on 102 subjects who presented symptoms of "nervous breakdown" and comorbidity with panic disorder, other anxiety disorders, or affective disorder. Variations in co-morbidity with "nervous breakdown" enabled the identification of different patterns of "nervous breakdown" presenting symptoms. Individuals with "nervous breakdown" and panic disorder characteristically expressed a greater sense of asphyxiation, fear of dying, and growing fear (panic-like) during their breakdowns. Subjects with "nervous breakdown" and affective disorder had a greater sensation of anger and more tendency toward screaming and aggressive behavior such as breaking things during the breakdown (emotional anger). Finally, subjects with "nervous breakdown" and co-morbidity with another anxiety disorder had fewer "paniclike" or "emotional anger" symptoms. These findings suggest that: a) the widely used term "nervous breakdown" is a popular label for different patterns of loss of emotional control; b) the type of loss of emotional control is influenced by the associated psychiatric disorder; and c) the symptoms characteristics of the "nervous breakdown" can be useful clinical markers for associated psychiatric disorders. Future research is needed to determine whether the known Hispanic entity "ataque de nervios" is simply a popular description for different aspects of well-known psychiatric disorders, or if it reflects specific demographic, environmental, personality and/or clinical

  9. Discharge breakdown in the EXTRAP configuration

    International Nuclear Information System (INIS)

    Drake, J.R.

    1982-02-01

    The breakdown of a discharge in a linear EXTRAP configuration has been studied experimentally. In this configuration the breakdown occurs along the zero B-field line, which is the axis of the linear octupole magnetic field, between the anode and cathode which constitute the ends of the linear device. Breakdown could be described by a modified Townsend criterion which included additional electron losses due to the presence of the B-field transverse to the discharge. (author)

  10. Electrode breakdown potentials in MHD plasmas

    International Nuclear Information System (INIS)

    Sodha, M.S.; Raju, G.V.R.; Kumar, A.S.; Gupta, Bhumesh

    1988-01-01

    Electrode breakdown potentials and current densities have been calculated for both the thermionically electron emitting and non-emitting cathodes. Calculated values have been compared with the available experimental results. It is found that the cathode potential drop for the breakdown is almost unaffected by the emission. However, both the total potential difference between the anode and the cathode and the current density at the breakdown are higher for electron-emitting cathodes than for non-emitting cathodes. (author)

  11. The Development of Breakdown in Transformer Oil

    Directory of Open Access Journals (Sweden)

    Jozef Kudelcik

    2007-01-01

    Full Text Available The conditions under which breakdown of composite liquid - solid insulation can be occurred, e.g. in transformer, play an important role in designing of such insulation. The initial state of breakdown development is explained based on development of streamers in cavitations. The whole breakdown development in transformer oil is represented by RLC circuit and it depends on the parameters of outer circuit.

  12. Multiple helical modes of vortex breakdown

    DEFF Research Database (Denmark)

    Sørensen, Jens Nørkær; Naumov, I. V.; Okulov, Valery

    2011-01-01

    Experimental observations of vortex breakdown in a rotating lid-driven cavity are presented. The results show that vortex breakdown for cavities with high aspect ratios is associated with the appearance of stable helical vortex multiplets. By using results from stability theory generalizing Kelvi......’s problem on vortex polygon stability, and systematically exploring the cavity flow, we succeeded in identifying two new stable vortex breakdown states consisting of triple and quadruple helical multiplets....

  13. Statistical characteristics of transient enclosure voltage in ultra-high-voltage gas-insulated switchgear

    Science.gov (United States)

    Cai, Yuanji; Guan, Yonggang; Liu, Weidong

    2017-06-01

    Transient enclosure voltage (TEV), which is a phenomenon induced by the inner dielectric breakdown of SF6 during disconnector operations in a gas-insulated switchgear (GIS), may cause issues relating to shock hazard and electromagnetic interference to secondary equipment. This is a critical factor regarding the electromagnetic compatibility of ultra-high-voltage (UHV) substations. In this paper, the statistical characteristics of TEV at UHV level are collected from field experiments, and are analyzed and compared to those from a repeated strike process. The TEV waveforms during disconnector operations are recorded by a self-developed measurement system first. Then, statistical characteristics, such as the pulse number, duration of pulses, frequency components, magnitude and single pulse duration, are extracted. The transmission line theory is introduced to analyze the TEV and is validated by the experimental results. Finally, the relationship between the TEV and the repeated strike process is analyzed. This proves that the pulse voltage of the TEV is proportional to the corresponding breakdown voltage. The results contribute to the definition of the standard testing waveform of the TEV, and can aid the protection of electronic devices in substations by minimizing the threat of this phenomenon.

  14. Studies of radiation blistering effects on voltage holding

    International Nuclear Information System (INIS)

    Miley, G.H.

    1975-01-01

    The surfaces of niobium and tungsten wires were blistered by 300-keV helium-ion irradiation and then tested for voltage holding. A cylindrical projection-tube technique was employed so that regions of strong electron emission could be observed and later examined with a scanning electron microscope (SEM). Blistering was found to cause significant increases in pre-breakdown currents. However, these currents tend to saturate over a region corresponding to around 200-400 kV/cm surface field such that the ultimate voltage breakdown limit is not seriously reduced. Emission image observations and SEM photographs suggest that, in many cases, parts of the blistered surface are gradually erected by the strong surface fields, but this may not occur until after several arc breakdowns. SEM photographs also indicate that vapor from the anode may play an important part in the breakdown mechanism. Implications of these results to the design of devices important to fusion development, such as direct collectors and ion sources, are briefly discussed. The importance of future in situ irradiation-voltage experiments is also stressed. (U.S.)

  15. Work Breakdown Structure (WBS) Handbook

    Science.gov (United States)

    2010-01-01

    The purpose of this document is to provide program/project teams necessary instruction and guidance in the best practices for Work Breakdown Structure (WBS) and WBS dictionary development and use for project implementation and management control. This handbook can be used for all types of NASA projects and work activities including research, development, construction, test and evaluation, and operations. The products of these work efforts may be hardware, software, data, or service elements (alone or in combination). The aim of this document is to assist project teams in the development of effective work breakdown structures that provide a framework of common reference for all project elements. The WBS and WBS dictionary are effective management processes for planning, organizing, and administering NASA programs and projects. The guidance contained in this document is applicable to both in-house, NASA-led effort and contracted effort. It assists management teams from both entities in fulfilling necessary responsibilities for successful accomplishment of project cost, schedule, and technical goals. Benefits resulting from the use of an effective WBS include, but are not limited to: providing a basis for assigned project responsibilities, providing a basis for project schedule development, simplifying a project by dividing the total work scope into manageable units, and providing a common reference for all project communication.

  16. The Multistability of Technological Breakdowns in Education

    DEFF Research Database (Denmark)

    Andersen, Bjarke Lindsø; Tafdrup, Oliver Alexander

    2017-01-01

    Introduction Everyone who is involved with modern technological artefacts such as computers, software and tablets has experienced situations where the artefacts suddenly cease to function properly. This is commonly known as a technological breakdown. Within education and the praxis of teaching...... technological breakdowns become a more and more ubiquitous phenomenon due to the rapid increase of technological artefacts utilized for educational purposes (Riis, 2012). The breakdowns impact the educational practice with consequences ranging from creating small obstacles to rendering it impossible to conduct...... successful teaching. Thus, knowing how to cope with technological breakdowns is a pivotal part of being a technological literate....

  17. Electric Conductivity and Dielectric-Breakdown Behavior for Polyurethane Magnetic Elastomers.

    Science.gov (United States)

    Sasaki, Shuhei; Tsujiei, Yuri; Kawai, Mika; Mitsumata, Tetsu

    2017-02-23

    The electric-voltage dependence of the electric conductivity for cross-linked and un-cross-linked magnetic elastomers was measured at various magnetic fields, and the effect of cross-linking on the electric conductivity and the dielectric-breakdown behavior was investigated. The electric conductivity for un-cross-linked elastomers at low voltages was independent of magnetic fields and the volume fraction of magnetic particles, indicating the electric conduction in the polyurethane matrix. At high voltages, the electric conductivity increased with the magnetic field, showing the electric conduction via chains of magnetic particles. On the other hand, the electric conductivity at low voltages for cross-linked elastomers with volume fractions below 0.06 was independent of the magnetic field, suggesting the electric conduction in the polyurethane matrix. At volume fractions above 0.14, the electric conductivity increased with the magnetic field, suggesting the electric conduction via chains of magnetic particles. At high voltages, the electric conductivity for cross-linked elastomers with a volume fraction of 0.02 was independent of the magnetic field, indicating the electric conduction through the polyurethane matrix. At volume fractions above 0.06, the electric conductivity suddenly increased at a critical voltage, exhibiting the dielectric breakdown at the bound layer of magnetic particles and/or the discontinuous part between chains.

  18. High voltage systems

    International Nuclear Information System (INIS)

    Martin, M.

    1991-01-01

    Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

  19. Breakdown assisted by a novel electron drift injection in the J-TEXT tokamak

    International Nuclear Information System (INIS)

    Wang, Nengchao; Jin, Hai; Zhuang, Ge; Ding, Yonghua; Pan, Yuan; Cen, Yishun; Chen, Zhipeng; Huang, Hai; Liu, Dequan; Rao, Bo; Zhang, Ming; Zou, Bichen

    2014-01-01

    A novel electron drift injection (EDI) system aiming to improve breakdown behavior has been designed and constructed on the Joint Texas EXperiment Tokamak Tokamak. Electrons emitted by the system undergo the E×B drift, ∇B drift and curvature drift in sequence in order to traverse the confining magnetic field. A local electrostatic well, generated by a concave-shaped plate biased more negative than the cathode, is introduced to interrupt the emitted electrons moving along the magnetic field line (in the parallel direction) in an attempt to bring an enhancement of the injection efficiency and depth. A series of experiments have demonstrated the feasibility of this method, and a penetration distance deeper than 9.5 cm is achieved. Notable breakdown improvements, including the reduction of breakdown delay and average loop voltage, are observed for discharges assisted by EDI. The lower limit of successfully ionized pressure is expanded

  20. Facilitating breakdown in noble gases at near-atmospheric pressure using antennas

    Energy Technology Data Exchange (ETDEWEB)

    Sobota, A; Van Veldhuizen, E M; Haverlag, M [Eindhoven University of Technology, Department of Applied Physics, Postbus 513, 5600MB Eindhoven (Netherlands); Gendre, M F; Manders, F, E-mail: a.sobota@tue.nl [Philips Lighting, Mathildelaan 1, 5600JM Eindhoven (Netherlands)

    2011-04-20

    Electrical breakdown in near-atmospheric pressure noble gases requires voltages that are quite high, which is undesirable for a large number of possible applications. Metallic structures (antennas) were used on the outer side of the lamp burner to enhance the electric field locally while keeping the same potential difference across the electrodes. Optical and electrical measurements were performed in an argon or xenon atmosphere at 0.3 or 0.7 bar, with 4 or 7 mm between the electrode tips. We used rod-shaped tungsten electrodes of 0.6 mm in diameter. We found that both active and passive antennas facilitate breakdown, and we demonstrated the differences between the two types and their effects on the breakdown process.

  1. Facilitating breakdown in noble gases at near-atmospheric pressure using antennas

    International Nuclear Information System (INIS)

    Sobota, A; Van Veldhuizen, E M; Haverlag, M; Gendre, M F; Manders, F

    2011-01-01

    Electrical breakdown in near-atmospheric pressure noble gases requires voltages that are quite high, which is undesirable for a large number of possible applications. Metallic structures (antennas) were used on the outer side of the lamp burner to enhance the electric field locally while keeping the same potential difference across the electrodes. Optical and electrical measurements were performed in an argon or xenon atmosphere at 0.3 or 0.7 bar, with 4 or 7 mm between the electrode tips. We used rod-shaped tungsten electrodes of 0.6 mm in diameter. We found that both active and passive antennas facilitate breakdown, and we demonstrated the differences between the two types and their effects on the breakdown process.

  2. Protections Against Grid Breakdowns in the ITER Neutral Beam Injector Power Supplies

    International Nuclear Information System (INIS)

    Bigi, M.; Toigo, V.; Zanotto, L.

    2006-01-01

    The ITER Neutral Beam Injector (NBI) is designed to deliver 16.5 MW of additional heating power to the plasma, accelerating negative ions up to -1 MV with a current up to 40 A. Two main power supplies are foreseen to feed the system: the Acceleration Grid Power Supply (AGPS), which provides power to the acceleration grids, and the Ion Source Power Supply (ISPS), devoted to supplying the ion source components. For the accelerator, two different concepts are under investigation: the MAMuG (Multiple Aperture, Multiple Gap) and the SINGAP (SINgle Aperture). During operation of the NBI, the breakdown of the acceleration grids will occur regularly; as a consequence the AGPS is expected to experience frequent load short-circuits during a pulse. For each grid breakdown, energy and current peaks are delivered from the power supply systems that could damage the grids, if not limited. In previous NBI, rated for a lower accelerating voltage, the protection system in case of grid breakdowns was based on dc circuit breakers able to quickly disconnect the power supply from the grids. In the ITER case, a similar solution is not feasible, as the voltage level is too high for present dc breaker technology. Therefore, the protection strategy has to rely on fast switch-off of the power supplies, on the optimisation of the filter elements and core snubbers placed downstream the AGPS and on the introduction of additional passive elements. However, achieving a satisfactory protection against grid breakdowns is a challenging task, as the optimisation of each single provision can result in drawbacks for other aspects of the design; for instance, the optimisation of the filter elements, obtained by reducing the filter capacitance, produces an increase of the output voltage ripple. Therefore, the design of the protections must be carried out considering all the relevant aspects of the specifications, also those that are not strictly related to the limitations of the current peaks and energy

  3. The physics of ''vacuum'' breakdown

    International Nuclear Information System (INIS)

    Schwirzke, F.

    1993-01-01

    Many discharges form small cathode spots which provide such a high energy density that the cathode material explodes into a dense plasma cloud within a very short time. Despite the fundamental importance of cathode spots for the breakdown process and the formation of a discharge, the structure of the cathode spot plasma and the source of the high energy density were not yet well defined. One model, the whisker explosive emission model, assumes that joule heating by field emitted electrons provides the energy. Current densities of j FE = 10 12 - 10 13 A/m 2 would be required. However, the pre-breakdown j FE is self-limiting. The negative space charge caused by j FE in the cathode-anode gap reduces the effective electric field E on the cathode surface. The maximum current density j CL is space charge limited by Child-Langmuir's law. The field emitting spot cannot deliver j CL without turning itself off, since the negative space charge caused by j CL reduces E congruent 0 at the cathode surface. Hence, it must be that the vacuum j FE CL . The development of a current with j > j FE (vacuum) requires that ions exist in front of the electron emitting spot. Ions cannot be emitted from the surface of the field emitting spot, the enhanced electric field would hold them back. The initial ionization must occur in the cathode-anode gap near the electron emitting spot. Ionization of desorbed neutrals provides the mechanism. This ionization process requires considerably less current than the ionization of solid material by joule heating. Field emission and the impact of ions stimulate desorption of weakly bound adsorbates from the surface of the electron emitting spot. The cross section for ionization of the neutrals has a maximum for ∼ 100 eV electrons

  4. Breakdown of interdependent directed networks.

    Science.gov (United States)

    Liu, Xueming; Stanley, H Eugene; Gao, Jianxi

    2016-02-02

    Increasing evidence shows that real-world systems interact with one another via dependency connectivities. Failing connectivities are the mechanism behind the breakdown of interacting complex systems, e.g., blackouts caused by the interdependence of power grids and communication networks. Previous research analyzing the robustness of interdependent networks has been limited to undirected networks. However, most real-world networks are directed, their in-degrees and out-degrees may be correlated, and they are often coupled to one another as interdependent directed networks. To understand the breakdown and robustness of interdependent directed networks, we develop a theoretical framework based on generating functions and percolation theory. We find that for interdependent Erdős-Rényi networks the directionality within each network increases their vulnerability and exhibits hybrid phase transitions. We also find that the percolation behavior of interdependent directed scale-free networks with and without degree correlations is so complex that two criteria are needed to quantify and compare their robustness: the percolation threshold and the integrated size of the giant component during an entire attack process. Interestingly, we find that the in-degree and out-degree correlations in each network layer increase the robustness of interdependent degree heterogeneous networks that most real networks are, but decrease the robustness of interdependent networks with homogeneous degree distribution and with strong coupling strengths. Moreover, by applying our theoretical analysis to real interdependent international trade networks, we find that the robustness of these real-world systems increases with the in-degree and out-degree correlations, confirming our theoretical analysis.

  5. A Study on Gas Insulation Characteristics for Design Optimization of High Voltage Power Apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Kim, I S; Kim, M K; Seo, K S; Moon, I W; Choi, C K [Korea Electrotechnology Research Institute (Korea, Republic of)

    1996-12-01

    This study aim of obtaining the basic data for gas insulation in the high voltage apparatus and for investigating the breakdown characteristics in uniform field and non-uniform which the geometric construction in the practical power apparatus. In this study, the research results on the insulation technology published earlier are reviewed and the basic data for an optimum design of a high voltage apparatus are obtained thorough the experiment and computer simulation by using a uniform field. The main result are summarized as follows: (A) Investigation on the insulation technology in a large-capacity power apparatus. (B) Investigation on the breakdown characteristics in particle contaminated condition. (C) Investigation on the design in computer simulation. (D) Investigation on the simulation technology of breakdown characteristics. (E) Investigation on breakdown characteristics in the nonuniform field and experiment. (author). refs., figs., tabs.

  6. Fast Breakdown as Coronal/Ionization Waves?

    Science.gov (United States)

    Krehbiel, P. R.; Petersen, D.; da Silva, C. L.

    2017-12-01

    Studies of high-power narrow bipolar events (NBEs) have shown they are produced by a newly-recognized breakdown process called fast positive breakdown (FPB, Rison et al., 2016, doi:10.1038/ncomms10721). The breakdown was inferred to be produced by a system of positive streamers that propagate at high speed ( ˜3-6 x 107 m/s) due to occurring in a localized region of strong electric field. The polarity of the breakdown was determined from broadband interferometer (INTF) observations of the propagation direction of its VHF radiation, which was downward into the main negative charge region of a normally-electrified storm. Subsequent INTF observations being conducted in at Kennedy Space Center in Florida have shown a much greater incidence of NBEs than in New Mexico. Among the larger dataset have been clear-cut instances of some NBEs being produced by upward breakdown that would be of negative polarity. The speed and behavior of the negative breakdown is the same as that of the fast positive, leading to it being termed fast negative breakdown (FNB). The similarity (not too mention its occurrence) is surprising, given the fact that negative streamers and breakdown develops much differently than that of positive breakdown. The question is how this happens. In this study, we compare fast breakdown characteristics to well-known streamer properties as inferred from laboratory experiments and theoretical analysis. Additionally, we begin to explore the possibility that both polarities of fast breakdown are produced by what may be called coronal or ionization waves, in which the enhanced electric field produced by streamer or coronal breakdown of either polarity propagates away from the advancing front at the speed of light into a medium that is in a metastable condition of being at the threshold of hydrometeor-mediated corona onset or other ionization processes. The wave would develop at a faster speed than the streamer breakdown that gives rise to it, and thus would be

  7. Organic dielectrics in high voltage cables

    Energy Technology Data Exchange (ETDEWEB)

    Vermeer, J

    1962-03-01

    It appears that the limit has been reached in the applicability of oil-impregnated paper as the dielectric for ehv cables, as with rising voltages the prevention of conductor losses becomes increasingly difficult, while the dielectric losses of the insulation, increasing as the square of the voltage, contribute to a greater extent to the temperature rise of the conductor. The power transmitting capacity of ehv cables reaches a maximum at 500 to 600 kV for these reasons. Apart from artificial cooling, a substantial improvement can be obtained only with the use of insulating materials with much lower dielectric losses; these can moreover be applied with a smaller wall thickness, but this means higher field strengths. Synthetic polymer materials meet these requirements but can be used successfully only in the form of lapped film tapes impregnated with suitable liquids. The electrical properties of these heterogeneous dielectrics, in particular, their impulse breakdown strengths are studied in detail.

  8. Experiments concerning the theories of vortex breakdown

    Science.gov (United States)

    Panton, Ronald L.; Stifle, Kirk E.

    1991-01-01

    An experimental project was undertaken to investigate the character of vortex breakdown with particular regard to the stagnation and wave guide theories of vortex breakdown. Three different wings were used to produce a trailing vortex which convected downstream without undergoing breakdown. Disturbances were then introduced onto the vortex using a moving wire to 'cut' the vortex. The development of upstream and downstream propagating disturbance waves was observed and the propagation velocities measured. A downstream traveling wave was observed to produce a structure similar in appearance to a vortex breakdown. An upstream traveling wave produced a moving turbulent region. The upstream disturbance moved into an axial velocity profile that had a wake-like defect while the downstream moving vortex breakdown moved against a jet-like overshoot. The longitudinal and swirl velocity profiles were documented by LDV measurement. Wave velocities, swirl angles, and swirl parameters are reported.

  9. Study of Dielectric Breakdown Performance of Transformer Oil Based Magnetic Nanofluids

    Directory of Open Access Journals (Sweden)

    Yuzhen Lv

    2017-07-01

    Full Text Available Research on the transformer oil-based nanofluids (NFs has been raised expeditiously over the past decade. Although, there is discrepancy in the stated results and inadequate understanding of the mechanisms of improvement of dielectric nanofluids, these nanofluids have emerged as a potential substitute of mineral oils as insulating and heat removal fluids for high voltage equipment. The transformer oil (TO based magnetic fluids (ferrofluids may be regarded as the posterity insulation fluids as they propose inspiring unique prospectus to improve dielectric breakdown strength, as well as heat transfer efficiency, as compared to pure transformer oils. In this work, transformer oil-based magnetic nanofluids (MNFs are prepared by dispersal of Fe3O4 nanoparticles (MNPs into mineral oil as base oil, with various NPs loading from 5 to 80% w/v. The lightning impulse breakdown voltages (BDV measurement was conducted in accordance with IEC 60897 by using needle to sphere electrodes geometry. The test results showed that dispersion of magnetic NPs may improve the insulation strength of MO. With the increment of NPs concentrations, the positive lightning impulse (LI breakdown strength of TO is first raised, up to the highest value at 40% loading, and then tends to decrease at higher concentrations. The outcomes of negative LI breakdown showed that BDV of MNFs, with numerous loadings, were inferior to the breakdown strength of pure MO. The 40% concentration of nanoparticles (optimum concentration was selected, and positive and negative LI breakdown strength was also further studied at different sizes (10 nm, 20 nm, 30 nm and 40 nm of NPs and different electrode gap distances. Augmentation in the BDV of the ferrofluids (FFs is primarily because of dielectric and magnetic features of Fe3O4 nanoaprticles, which act as electron scavengers and decrease the rate of free electrons produced in the ionization process. Research challenges and technical difficulties

  10. Laser Induced Breakdown Spectroscopy (LIBS)

    Science.gov (United States)

    2010-03-31

    Radium 226 Page 34 Nitrogen mustard (HN) Lassa Polonium 210 Phosgene oxime (CX) Staphylococcal Enterotoxin B (SEB) ( Food Poisoning...sample preparation. Diverse solid or liquid samples including environmental, biological, geological, industrial, forensic, food , thin coatings...Thallium 201 Hydrogen cyanide (AC) FUNGI Thorium 232 Cyanogen chloride (CK) Aflatoxin Lead 210 Arsine (SA) Bacillus Sodium 22

  11. Voltage regulator for generator

    Energy Technology Data Exchange (ETDEWEB)

    Naoi, K

    1989-01-17

    It is an object of this invention to provide a voltage regulator for a generator charging a battery, wherein even if the ambient temperature at the voltage regulator rises abnormally high, possible thermal breakage of the semiconductor elements constituting the voltage regulator can be avoided. A feature of this invention is that the semiconductor elements can be protected from thermal breakage, even at an abnormal ambient temperature rise at the voltage regulator for the battery charging generator, by controlling a maximum conduction ratio of a power transistor in the voltage regulator in accordance with the temperature at the voltage regulator. This is achieved through a switching device connected in series to the field coil of the generator and adapted to be controlled in accordance with an output voltage of the generator and the ambient temperature at the voltage regulator. 6 figs.

  12. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  13. Study of n-on-p sensors breakdown in presence of dielectrics placed on top surface

    CERN Document Server

    Helling, Cole Michael; The ATLAS collaboration

    2018-01-01

    The ATLAS Upgrade strip module design has readout flex circuits glued directly on top of the sensors’ active area to facilitate the assembly process and minimize the radiation length. The process requires radiation-hard adhesives compatible with the sensor technology. We report on the studies of the breakdown behavior with miniature versions of the prototype sensors, where candidate adhesives were placed in several locations on top of the sensor, including the strip area, guard ring region, and sensor edge. Thermal cycling tends to attenuate the observed cases of breakdown with glue on top of the guard ring. Glue reaching the sensor edge results in low breakdown voltage if it also covers AC- or DC- pads or bias ring openings. Glue placement on top of guard ring region was performed on a large-format sensor, with generally similar results to the miniature sensor tests, except for a large glue deposition, which resulted in a permanent reduction of the breakdown voltage. Post-irradiation measurements were perf...

  14. AC electrical breakdown phenomena of epoxy/layered silicate nanocomposite in needle-plate electrodes.

    Science.gov (United States)

    Park, Jae-Jun; Lee, Jae-Young

    2013-05-01

    Epoxy/layered silicate nanocomposite for the insulation of heavy electric equipments were prepared by dispersing 1 wt% of a layered silicate into an epoxy matrix with a homogenizing mixer and then AC electrical treeing and breakdown tests were carried out. Wide-angle X-ray diffraction (WAXD) analysis and transmission electron microscopy (TEM) observation showed that nano-sized monolayers were exfoliated from a multilayered silicate in the epoxy matrix. When the nano-sized silicate layers were incorporated into the epoxy matrix, the breakdown rate in needle-plate electrode geometry was 10.6 times lowered than that of the neat epoxy resin under the applied electrical field of 520.9 kV/mm at 30 degrees C, and electrical tree propagated with much more branches in the epoxy/layered silicate nanocomposite. These results showed that well-dispersed nano-sized silicate layers retarded the electrical tree growth rate. The effects of applied voltage and ambient temperature on the tree initiation, growth, and breakdown rate were also studied, and it was found that the breakdown rate was largely increased, as the applied voltage and ambient temperature increased.

  15. Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron mobility transistors

    Science.gov (United States)

    Yamazaki, Taisei; Asubar, Joel T.; Tokuda, Hirokuni; Kuzuhara, Masaaki

    2018-05-01

    We investigated the impact of rounded electrode corners on the breakdown characteristics of AlGaN/GaN high-electron mobility transistors. For standard reference devices, catastrophic breakdown occurred predominantly near the sharp electrode corners. By introducing a rounded-electrode architecture, premature breakdown at the corners was mitigated. Moreover, the rate of breakdown voltage (V BR) degradation with an increasing gate width (W G) was significantly lower for devices with rounded corners. When W G was increased from 100 µm to 10 mm, the V BR of the reference device dropped drastically, from 1,200 to 300 V, whereas that of the rounded-electrode device only decreased to a respectable value of 730 V.

  16. Abnormal polarity effect in nanosecond-pulse breakdown of SF6 and nitrogen

    International Nuclear Information System (INIS)

    Shao, Tao; Tarasenko, Victor F.; Zhang, Cheng; Beloplotov, Dmitry S.; Yang, Wenjin; Lomaev, Mikhail I.; Zhou, Zhongsheng; Sorokin, Dmitry A.; Yan, Ping

    2014-01-01

    The breakdown of gas gaps in an inhomogeneous electric field at subnanosecond and nanosecond voltage pulse rise times are studied, and the famous polarity effect in point-to-plane gaps is investigated. It is shown that at a voltage pulse rise time of ∼0.5 ns, the inversion of polarity effect takes place not only in electronegative gases such as SF 6 , but also occurs in electropositive nitrogen. The inversion of polarity effect is related to a delay of electron emission from the plane cathode on arrival of the ionization wave front anode to the cathode. It is found that with a voltage pulse rise time of ∼0.5 ns, the inversion of polarity effect occurs at SF 6 and SF 6 –N 2 pressures of 0.25 MPa and lower, and with a voltage pulse rise time of 15 ns, at a SF 6 pressure lower than 0.12 MPa.

  17. The Work Breakdown Structure in an Acquisition Reform Environment

    National Research Council Canada - National Science Library

    Albert, Neil

    1997-01-01

    These viewgraphs discuss acquisition reform, costs, provide a definition for work breakdown structure, development process of work breakdown, an overview of contract business management, a GAO review...

  18. The influence of Ac parameters in the process of micro-arc oxidation film electric breakdown

    Directory of Open Access Journals (Sweden)

    Ma Jin

    2016-01-01

    Full Text Available This paper studies the electric breakdown discharge process of micro-arc oxidation film on the surface of aluminum alloy. Based on the analysis of the AC parameters variation in the micro-arc oxidation process, the following conclusions can be drawn: The growth of oxide film can be divided into three stages, and Oxide film breakdown discharge occurs twice in the micro-arc oxidation process. The first stage is the formation and disruptive discharge of amorphous oxide film, producing the ceramic oxide granules, which belong to solid dielectric breakdown. In this stage the membrane voltage of the oxide film plays a key role; the second stage is the formation of ceramic oxide film, the ceramic oxide granules turns into porous structure oxide film in this stage; the third stage is the growth of ceramic oxide film, the gas film that forms in the oxide film’s porous structure is electric broken-down, which is the second breakdown discharge process, the current density on the oxide film surface could affect the breakdown process significantly.

  19. Control of vortex breakdown in a closed cylinder with a rotating lid

    DEFF Research Database (Denmark)

    Jørgensen, Bo Hoffmann; Sørensen, Jens Nørkær; Aubry, Nadine

    2010-01-01

    The flow within a closed cylinder with a rotating lid is considered as a prototype for fundamental studies of vortex breakdown. Numerical simulations for various parameter values have been carried out to reproduce the known effect of a thin rotating rod positioned along the center axis as well...... as analyze the influence of local vorticity sources. As expected, the results show that the breakdown bubbles in the steady axisymmetric flow can be affected dramatically, i.e., fully suppressed or significantly enhanced, by rotating the rod. The main contribution of this article is to show that the observed...... behavior can be explained by the vorticity generated by the rod locally near the rotating lid and near the fixed lid, as analogous behavior is caused by the introduction of local vorticity sources in the flow without a rod. Moreover, we describe the influence on the breakdown bubbles of the vorticity...

  20. Breakdown Cause and Effect Analysis. Case Study

    Science.gov (United States)

    Biały, Witold; Ružbarský, Juraj

    2018-06-01

    Every company must ensure that the production process proceeds without interferences. Within this article, the author uses the term "interferences" in reference to unplanned stoppages caused by breakdowns. Unfortunately, usually due to machine operators' mistakes, machines break, which causes stoppages thus generating additional costs for the company. This article shows a cause and effect analysis of a breakdown in a production process. The FMEA as well as quality management tools: the Ishikawa diagram and Pareto chart were used for the analysis. Correction measures were presented which allowed for a significant reduction in the number of stoppages caused by breakdowns.

  1. Fundamental studies of passivity and passivity breakdown

    International Nuclear Information System (INIS)

    Macdonald, D.D.; Urquidi-Macdonald, M.; Song, H.; Biaggio-Rocha, S.; Searson, P.

    1991-11-01

    This report summarizes the findings of our fundamental research program on passivity and passivity breakdown. During the past three and one half years in this program (including the three year incrementally-funded grant prior to the present grant), we developed and experimentally tested various physical models for the growth and breakdown of passive films on metal surfaces. These models belong to a general class termed ''point defects models'' (PDMs), in which the growth and breakdown of passive films are described in terms of the movement of anion and cation vacancies

  2. Uv laser triggering of high-voltage gas switches

    International Nuclear Information System (INIS)

    Woodworth, J.R.; Frost, C.A.; Green, T.A.

    1982-01-01

    Two different techniques are discussed for uv laser triggering of high-voltage gas switches using a KrF laser (248 nm) to create an ionized channel through the dielectric gas in a spark gap. One technique uses an uv laser to induce breakdown in SF 6 . For this technique, we present data that demonstrate a 1-sigma jitter of +- 150 ps for a 0.5-MV switch at 80% of its self-breakdown voltage using a low-divergence KrF laser. The other scheme uses additives to the normal dielectric gas, such as tripropylamine, which are selected to undergo resonant two-step ionization in the uv laser field

  3. The physics of open-quotes vacuumclose quotes breakdown

    International Nuclear Information System (INIS)

    Schwirzke, F.; Hallal, M.P. Jr.; Maruyama, X.K.

    1993-01-01

    The initial plasma formation on the surface of a cathode of a vacuum diode, vacuum arc, and many other discharges is highly non-uniform. Micron-sized cathode spots form within nanoseconds. Despite the fundamental importance of cathode spots for the breakdown process, their structure, and the source of the required high energy density were not well understood. When an increasing voltage is applied, enhanced field emission of electrons begins from a growing number of small spots or whiskers. This and the impact of ions stimulate desorption of weakly bound adsorbates from the surface of a whisker. The cross section for ionization of the neutrals has a maximum for ∼ 100 eV electrons. As the diode voltage increases, the 100 V equipotential surface which moves towards the cathode is met by the desorbed neutrals moving away from the cathode. These two regions proceed from no overlap to a significant amount of overlap on a nanosecond time scale. This results in the sharp risetime for the onset of ionization. Ions produced in the ionization region, a few μm from the electron emitting spot are accelerated back. This bombardment with ∼ 100 eV ions leads to surface heating of the spot. Since the ion energy is deposited only within a few atomic layers at a time, the onset of breakdown by this mechanism requires much less current than the joule heating mechanism. Ion surface heating is initially orders of magnitude larger than joule heating. As more ions are produced, a positive space charge layer forms which enhances the electric field and thus strongly enhances the field emitted electron current. The localized build-up of plasma above the electron emitting spot then naturally leads to pressure and electric field distributions which ignite unipolar arcs. The high current density of the unipolar arc and the associated surface heating by ions provide the open-quotes explosiveclose quotes formation of a cathode spot plasma

  4. Atlas transmission line breakdown analysis

    CERN Document Server

    Nielsen, K E; Ballard, E O; Elizondo, J M; Gribble, R F; McCuistian, B T; Parsons, W M

    1999-01-01

    The Atlas facility will use 24 radially converging, vertically oriented and tapered, oil insulated, triplate transmission lines between the Marx generators and the central load region. Among the requirements of the transmission lines are low inductance and high reliability. The inter-conductor gap is nominally 2 cm and the lines taper from a height of 1.75 m at the Marx end to 0.32 m at the output end. The aluminum conductors, held together by 20 insulating spacers, are assembled and inserted as a unit into radial oil-filled steel tanks. The negative, high-voltage, center conductor is 2.54-cm thick and the outer ground conductors are 1.59-cm thick. All 24 triplate transmission lines connect to a transition section at near 1 m radius that couples the transmission lines to a disk/conical solid- dielectric-insulated power flow channel transmission line terminating at the load. Peak operating voltage on the lines can be as high as 240 kV with an effective stress time of 0.8 mu s. Testing of small sections of the ...

  5. Bi-layer SixNy passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown

    International Nuclear Information System (INIS)

    Lee, K B; Green, R T; Houston, P A; Tan, W S; Uren, M J; Wallis, D J; Martin, T

    2010-01-01

    Si x N y deposited at low temperature was found to improve the breakdown voltage of AlGaN/GaN HEMTs at the expense of current collapse due to the presence of a high density of charge trapping states. On the other hand, stoichiometric Si 3 N 4 film deposited at high temperature was effective in mitigating current slump but no improvement in the breakdown voltage was observed. Combining the benefit of both films, a bi-layer stacked passivation has been employed on the HEMTs. Gate lag measurements revealed that the current collapse was mitigated and the breakdown voltage of the devices was found to increase from 120 V to 238 V upon passivation

  6. Conditioning and breakdown phenomena in accelerator tubes

    International Nuclear Information System (INIS)

    Skorka, S.J.

    1979-01-01

    Important breakdown mechanisms in accelerator tubes are reviewed, and discharge phenomena in NEC tubes are deduced from the surface appearance of the electrodes and insulators of a used tube. Microphotos of these surfaces are shown

  7. Advances in high voltage insulation and arc interruption in SF6 and vacuum

    CERN Document Server

    Maller, V N

    1982-01-01

    Advances in High Voltage Insulation and Arc Interruption in SF6 and Vacuum deals with high voltage breakdown and arc extinction in sulfur hexafluoride (SF6) and high vacuum, with special emphasis on the application of these insulating media in high voltage power apparatus and devices. The design and developmental aspects of various high voltage power apparatus using SF6 and high vacuum are highlighted. This book is comprised of eight chapters and opens with a discussion on electrical discharges in SF6 and high vacuum, along with the properties and handling of SF6 gas. The following chapters fo

  8. Nanosecond electrical explosion of thin aluminum wire in vacuum: experimental and computational investigations

    International Nuclear Information System (INIS)

    Cochrane, Kyle Robert; Struve, Kenneth William; Rosenthal, Stephen Edgar; McDaniel, Dillon Heirman; Sarkisov, Gennady Sergeevich; Deeney, Christopher

    2004-01-01

    The experimental and computational investigations of nanosecond electrical explosion of thin Al wire in vacuum are presented. We have demonstrated that increasing the current rate leads to increased energy deposited before voltage collapse. Laser shadowgrams of the overheated Al core exhibit axial stratification with a ∼100 (micro)m period. The experimental evidence for synchronization of the wire expansion and light emission with voltage collapse is presented. Two-wavelength interferometry shows an expanding Al core in a low-ionized gas condition with increasing ionization toward the periphery. Hydrocarbons are indicated in optical spectra and their influence on breakdown physics is discussed. The radial velocity of low-density plasma reaches a value of ∼100 km/s. The possibility of an overcritical phase transition due to high pressure is discussed. 1D MHD simulation shows good agreement with experimental data. MHD simulation demonstrates separation of the exploding wire into a high-density cold core and a low-density hot corona as well as fast rejection of the current from the wire core to the corona during voltage collapse. Important features of the dynamics for wire core and corona follow from the MHD simulation and are discussed.

  9. Obstacle-induced spiral vortex breakdown

    OpenAIRE

    Pasche, Simon; Gallaire, François; Dreyer, Matthieu; Farhat, Mohamed

    2014-01-01

    An experimental investigation on vortex breakdown dynamics is performed. An adverse pressure gradient is created along the axis of a wing-tip vortex by introducing a sphere downstream of an elliptical hydrofoil. The instrumentation involves high-speed visualizations with air bubbles used as tracers and 2D Laser Doppler Velocimeter (LDV). Two key parameters are identified and varied to control the onset of vortex breakdown: the swirl number, defined as the maximum azimuthal velocity divided by...

  10. Modeling Covariance Breakdowns in Multivariate GARCH

    OpenAIRE

    Jin, Xin; Maheu, John M

    2014-01-01

    This paper proposes a flexible way of modeling dynamic heterogeneous covariance breakdowns in multivariate GARCH (MGARCH) models. During periods of normal market activity, volatility dynamics are governed by an MGARCH specification. A covariance breakdown is any significant temporary deviation of the conditional covariance matrix from its implied MGARCH dynamics. This is captured through a flexible stochastic component that allows for changes in the conditional variances, covariances and impl...

  11. Voltage- and current-activated metal–insulator transition in VO2-based electrical switches: a lifetime operation analysis

    Directory of Open Access Journals (Sweden)

    Aurelian Crunteanu, Julien Givernaud, Jonathan Leroy, David Mardivirin, Corinne Champeaux, Jean-Christophe Orlianges, Alain Catherinot and Pierre Blondy

    2010-01-01

    Full Text Available Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal–insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal–insulator transition in VO2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO2-based switching (more than 260 million cycles without failure compared with the voltage-activated mode (breakdown at around 16 million activation cycles. The evolution of the electrical self-oscillations of a VO2-based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

  12. Skin breakdown in acute care pediatrics.

    Science.gov (United States)

    Suddaby, Elizabeth C; Barnett, Scott D; Facteau, Lorna

    2006-04-01

    The purpose of this study was to develop a simple, single-page measurement tool that evaluates risk of skin breakdown in the peadiatric population and apply it to the acutely hospitalized child. Data were collected over a 15-month period from 347 patients on four in-patient units (PICU, medical-surgical, oncology, and adolescents) on skin breakdown using the AHCPR staging guidelines and compared to the total score on the Starkid SkinScale in order to determine its ability to predict skin breakdown. The inter-rater reliability of the Starkid Skin Scale was r2 = 0.85 with an internal reliablity of 0.71. The sensitivity of the total score was low (17.5%) but highly specific (98.5%). The prevalence of skin breakdown in the acutely hospitalized child was 23%, the majority (77.5%) occurring as erythema of the skin. Buttocks, perineum, and occiput were the most common locations of breakdown. Occiput breakdown was more common in critically ill (PICU) patients while diaper dermatitis was more common in the general medical-surgical population.

  13. Humidity effects on wire insulation breakdown strength.

    Energy Technology Data Exchange (ETDEWEB)

    Appelhans, Leah

    2013-08-01

    Methods for the testing of the dielectric breakdown strength of insulation on metal wires under variable humidity conditions were developed. Two methods, an ASTM method and the twisted pair method, were compared to determine if the twisted pair method could be used for determination of breakdown strength under variable humidity conditions. It was concluded that, although there were small differences in outcomes between the two testing methods, the non-standard method (twisted pair) would be appropriate to use for further testing of the effects of humidity on breakdown performance. The dielectric breakdown strength of 34G copper wire insulated with double layer Poly-Thermaleze/Polyamide-imide insulation was measured using the twisted pair method under a variety of relative humidity (RH) conditions and exposure times. Humidity at 50% RH and below was not found to affect the dielectric breakdown strength. At 80% RH the dielectric breakdown strength was significantly diminished. No effect for exposure time up to 140 hours was observed at 50 or 80%RH.

  14. Time domain simulations of preliminary breakdown pulses in natural lightning.

    Science.gov (United States)

    Carlson, B E; Liang, C; Bitzer, P; Christian, H

    2015-06-16

    Lightning discharge is a complicated process with relevant physical scales spanning many orders of magnitude. In an effort to understand the electrodynamics of lightning and connect physical properties of the channel to observed behavior, we construct a simulation of charge and current flow on a narrow conducting channel embedded in three-dimensional space with the time domain electric field integral equation, the method of moments, and the thin-wire approximation. The method includes approximate treatment of resistance evolution due to lightning channel heating and the corona sheath of charge surrounding the lightning channel. Focusing our attention on preliminary breakdown in natural lightning by simulating stepwise channel extension with a simplified geometry, our simulation reproduces the broad features observed in data collected with the Huntsville Alabama Marx Meter Array. Some deviations in pulse shape details are evident, suggesting future work focusing on the detailed properties of the stepping mechanism. Preliminary breakdown pulses can be reproduced by simulated channel extension Channel heating and corona sheath formation are crucial to proper pulse shape Extension processes and channel orientation significantly affect observations.

  15. Effects of Nanoparticle Materials on Prebreakdown and Breakdown Properties of Transformer Oil

    Directory of Open Access Journals (Sweden)

    Yuzhen Lv

    2018-04-01

    Full Text Available In order to reveal the effects of nanoparticle materials on prebreakdown and breakdown properties of transformer oil, three types of nanoparticle materials, including conductive Fe3O4, semiconductive TiO2 and insulating Al2O3 nanoparticles, were prepared with the same size and surface modification. An experimental study on the breakdown strength and prebreakdown streamer propagation characteristics were investigated for transformer oil and three types of nanofluids under positive lightning impulse voltage. The results indicate that the type of nanoparticle materials has a notable impact on breakdown strength and streamer propagation characteristics of transformer oil. Breakdown voltages of nanofluids are markedly increased by 41.3% and 29.8% respectively by the presence of Fe3O4 and TiO2 nanoparticles. Whereas a slight increase of only 7.4% is observed for Al2O3 nanofluid. Moreover, main discharge channels with thicker and denser branches are formed and the streamer propagation velocities are greatly lowered both in Fe3O4 and TiO2 nanofluids, while no obvious change appears in the propagation process of streamers in Al2O3 nanofluid in comparison with that in pure oil. The test results of trap characteristics reveal that the densities of shallow traps both in Fe3O4 and TiO2 nanofluids are much higher than that in Al2O3 nanofluid and pure oil, greatly reducing the distortion of the electric field. Thus, the propagations of positive streamers in the nanofluids are significantly suppressed by Fe3O4 and TiO2 nanoparticles, leading to the improvements of breakdown strength.

  16. Measuring protein breakdown rate in individual proteins in vivo

    DEFF Research Database (Denmark)

    Holm, Lars; Kjaer, Michael

    2010-01-01

    To outline different approaches of how protein breakdown can be quantified and to present a new approach to determine the fractional breakdown rate of individual slow turnover proteins in vivo.......To outline different approaches of how protein breakdown can be quantified and to present a new approach to determine the fractional breakdown rate of individual slow turnover proteins in vivo....

  17. Stray voltage mitigation

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

    2008-04-09

    This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

  18. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  19. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  20. Off-axis vortex breakdown in a shallow whirlpool.

    Science.gov (United States)

    Herrada, Miguel A; Shtern, Vladimir N; López-Herrera, José María

    2013-06-01

    The off-axis emergence of vortex breakdown (VB) is revealed. The steady axisymmetric flow in a vertical sealed cylinder, which is partially filled with water and the rest is filled with air, is driven by the rotating bottom disk. The numerical simulations show that VB can emerge away from the rotation axis, interface, and walls. As the rotation intensifies, VB first develops in the water region. If the water height is less (larger) than nearly one half of the cylinder radius, VB emerges off (on) the axis. As the rotation further increases, the off-axis VB ring touches the interface and then a thin countercirculation layer develops in the air flow above the water VB domain. This two-fluid VB ring shrinks (it even disappears in a very shallow whirlpool) as the interface approaches the bottom disk.

  1. A computational study of the topology of vortex breakdown

    Science.gov (United States)

    Spall, Robert E.; Gatski, Thomas B.

    1991-01-01

    A fully three-dimensional numerical simulation of vortex breakdown using the unsteady, incompressible Navier-Stokes equations has been performed. Solutions to four distinct types of breakdown are identified and compared with experimental results. The computed solutions include weak helical, double helix, spiral, and bubble-type breakdowns. The topological structure of the various breakdowns as well as their interrelationship are studied. The data reveal that the asymmetric modes of breakdown may be subject to additional breakdowns as the vortex core evolves in the streamwise direction. The solutions also show that the freestream axial velocity distribution has a significant effect on the position and type of vortex breakdown.

  2. Conditions for electron runaway under leader breakdown of long gaps

    International Nuclear Information System (INIS)

    Ul'yanov, K. N.

    2008-01-01

    An original hydrodynamic model in which inelastic collisions in the equations of motion and energy balance play a decisive role is developed and applied to simulate electron avalanches in strong electric fields. The mean energy and drift velocity of electrons, as well as the ionization coefficient and electric field in a wide range of mean electron energies, are determined for helium and xenon. A criterion is derived for the runaway of the average electron in discharges with ionization multiplication. It is shown that runaway can take place at any value of E/p, provided that the momentum mean free path exceeds the gap length. The voltage corresponding to electron runaway is found for helium, xenon, and air as a function of the electric field, the electron mean energy, and the parameter pd. Conditions for the formation of a precursor in electronegative gases are analyzed. It is shown that the presence of a precursor with a high electric conductance is necessary for the formation of a new leader step. The voltage and time ranges corresponding to efficient electron runaway and X-ray generation during leader breakdown in air are determined

  3. Choice of operating voltage for a transmission electron microscope

    International Nuclear Information System (INIS)

    Egerton, R.F.

    2014-01-01

    An accelerating voltage of 100–300 kV remains a good choice for the majority of TEM or STEM specimens, avoiding the expense of high-voltage microscopy but providing the possibility of atomic resolution even in the absence of lens-aberration correction. For specimens thicker than a few tens of nm, the image intensity and scattering contrast are likely to be higher than at lower voltage, as is the visibility of ionization edges below 1000 eV (as required for EELS elemental analysis). In thick (>100 nm) specimens, higher voltage ensures less beam broadening and better spatial resolution for STEM imaging and EDX spectroscopy. Low-voltage (e.g. 30 kV) TEM or STEM is attractive for a very thin (e.g. 10 nm) specimen, as it provides higher scattering contrast and fewer problems for valence-excitation EELS. Specimens that are immune to radiolysis suffer knock-on damage at high current densities, and this form of radiation damage can be reduced or avoided by choosing a low accelerating voltage. Low-voltage STEM with an aberration-corrected objective lens (together with a high-angle dark-field detector and/or EELS) offers atomic resolution and elemental identification from very thin specimens. Conventional TEM can provide atomic resolution in low-voltage phase-contrast images but requires correction of chromatic aberration and preferably an electron-beam monochromator. Many non-conducting (e.g. organic) specimens damage easily by radiolysis and radiation damage then determines the TEM image resolution. For bright-field scattering contrast, low kV can provide slightly better dose-limited resolution if the specimen is very thin (a few nm) but considerably better resolution is possible from a thicker specimen, for which higher kV is required. Use of a phase plate in a conventional TEM offers the most dose-efficient way of achieving atomic resolution from beam-sensitive specimens. - Highlights: • 100–300 kV accelerating voltage is suitable for TEM specimens of typical

  4. Microwave integrated circuit for Josephson voltage standards

    Science.gov (United States)

    Holdeman, L. B.; Toots, J.; Chang, C. C. (Inventor)

    1980-01-01

    A microwave integrated circuit comprised of one or more Josephson junctions and short sections of microstrip or stripline transmission line is fabricated from thin layers of superconducting metal on a dielectric substrate. The short sections of transmission are combined to form the elements of the circuit and particularly, two microwave resonators. The Josephson junctions are located between the resonators and the impedance of the Josephson junctions forms part of the circuitry that couples the two resonators. The microwave integrated circuit has an application in Josephson voltage standards. In this application, the device is asymmetrically driven at a selected frequency (approximately equal to the resonance frequency of the resonators), and a d.c. bias is applied to the junction. By observing the current voltage characteristic of the junction, a precise voltage, proportional to the frequency of the microwave drive signal, is obtained.

  5. Off state breakdown behavior of AlGaAs / InGaAs field plate pHEMTs

    International Nuclear Information System (INIS)

    Palma, John; Mil'shtein, Samson

    2014-01-01

    Off-state breakdown voltage, V br , is an important parameter determining the maximum power output of microwave Field Effect Transistors (FETs). In recent years, the use of field plates has been widely adopted to significantly increase V br . This important technological development has extended FET technologies into new areas requiring these higher voltages and power levels. Keeping with this goal, field plates were added to an existing AlGaAs / InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) process with the aim of determining the off-state breakdown mechanism and the dependency of V br on the field plate design. To find the mechanism responsible for breakdown, temperature dependent off-state breakdown measurements were conducted. It was found that at low current levels, the temperature dependence indicates thermionic field emission at the Schottky gate and at higher current levels, impact ionization is indicated. The combined results imply that impact ionization is ultimately the mechanism that is responsible for the breakdown in the tested transistors, but that it is preceded by thermionic field emission from the gate. To test the dependence of V br upon the field plate design, the field plate length and the etch depth through the highly-doped cap layer under the field plate were varied. Also, non-field plate devices were tested along side field plate transistors. It was found that the length of the etched region under the field plate is the dominant factor in determining the off-state breakdown of the more deeply etched devices. For less deeply etched devices, the length of the field plate is more influential. The influence of surface states between the highly doped cap layer and the passivation layer along the recess are believed to have a significant influence in the case of the more deeply etched examples. It is believed that these traps spread the electric field, thus raising the breakdown voltage. Three terminal breakdown voltages

  6. The Applicability of Fluid Model to Electrical Breakdown and Glow Discharge Modeling in Argon

    International Nuclear Information System (INIS)

    Stankov, M. N.; Marković, V. Lj.; Stamenković, S. N.; Jovanović, A. P.; Petković, M. D.

    2015-01-01

    The simple fluid model, an extended fluid model, and the fluid model with nonlocal ionization are applied for the calculations of static breakdown voltages, Paschen curves and current-voltage characteristics. The best agreement with the experimental data for the Paschen curve modeling is achieved by using the model with variable secondary electron yield. The modeling of current-voltage characteristics is performed for different inter-electrode distances and the results are compared with the experimental data. The fluid model with nonlocal ionization shows an excellent agreement for all inter-electrode distances, while the extended fluid model with variable electron transport coefficients agrees well with measurements at short inter-electrode distances when ionization by fast electrons can be neglected. (physics of gases, plasmas, and electric discharges)

  7. A compact, all solid-state LC high voltage generator.

    Science.gov (United States)

    Fan, Xuliang; Liu, Jinliang

    2013-06-01

    LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

  8. Discussion - a high voltage DC generator

    International Nuclear Information System (INIS)

    Bhagwat, P.V.; Singh, Jagir; Hattangadi, V.A.

    1993-01-01

    One of the requirements for a high power ion source is a high voltage, high current DC generator. The high voltage, high current generator, DISCATRON, presently under development in our laboratory is a rotating disc type electrostatic generator similar in design to the one reported by A. Isoya et al. (1985). It is compact and rugged electrostatic DC generator based on the principle of induction charging by pellet chains used in the pelletron accelerator. It is, basically, a constant-current device with little stored energy, so that, in case of a breakdown, damage to the equipment connected to the output terminals is minimal. Since the present generator is only a proto-type, meant for a study of the practical difficulties that would be encountered in its manufacture, the output voltage and current specified has been kept quite modest viz., 300 kV at 500 μA, maximum. Some results of the preliminary tests carried out with this generator are described. (author). 4 figs

  9. A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate

    International Nuclear Information System (INIS)

    Wang Zhongjian; Cheng Xinhong; Xia Chao; Xu Dawei; Cao Duo; Song Zhaorui; Yu Yuehui; Shen Dashen

    2012-01-01

    A 680 V LDMOS on a thin SOI with an improved field oxide (FOX) and dual field plate was studied experimentally. The FOX structure was formed by an 'oxidation-etch-oxidation' process, which took much less time to form, and had a low protrusion profile. A polysilicon field plate extended to the FOX and a long metal field plate was used to improve the specific on-resistance. An optimized drift region implant for linear-gradient doping was adopted to achieve a uniform lateral electric field. Using a SimBond SOI wafer with a 1.5 μm top silicon and a 3 μm buried oxide layer, CMOS compatible SOI LDMOS processes are designed and implemented successfully. The off-state breakdown voltage reached 680 V, and the specific on-resistance was 8.2 Ω·mm 2 . (semiconductor devices)

  10. Three-dimensional supersonic vortex breakdown

    Science.gov (United States)

    Kandil, Osama A.; Kandil, Hamdy A.; Liu, C. H.

    1993-01-01

    Three-dimensional supersonic vortex-breakdown problems in bound and unbound domains are solved. The solutions are obtained using the time-accurate integration of the unsteady, compressible, full Navier-Stokes (NS) equations. The computational scheme is an implicit, upwind, flux-difference splitting, finite-volume scheme. Two vortex-breakdown applications are considered in the present paper. The first is for a supersonic swirling jet which is issued from a nozzle into a supersonic uniform flow at a lower Mach number than that of the swirling jet. The second is for a supersonic swirling flow in a configured circular duct. In the first application, an extensive study of the effects of grid fineness, shape and grid-point distribution on the vortex breakdown is presented. Four grids are used in this study and they show a substantial dependence of the breakdown bubble and shock wave on the grid used. In the second application, the bubble-type and helix-type vortex breakdown have been captured.

  11. Planned waveguide electric field breakdown studies

    International Nuclear Information System (INIS)

    Wang Faya; Li Zenghai

    2012-01-01

    This paper presents an experimental setup for X-band rf breakdown studies. The setup is composed of a section of WR90 waveguide with a tapered pin located at the middle of the waveguide E-plane. Another pin is used to rf match the waveguide so it operates in a travelling wave mode. By adjusting the penetration depth of the tapered pin, different surface electric field enhancements can be obtained. The setup will be used to study the rf breakdown rate dependence on power flow in the waveguide for a constant maximum surface electric field on the pin. Two groups of pins have been designed. The Q of one group is different and very low. The other has a similar Q. With the test of the two groups of pins, we should be able to discern how the net power flow and Q affect the breakdown. Furthermore, we will apply an electron beam treatment to the pins to study its effect on breakdown. Overall, these experiments should be very helpful in understanding rf breakdown phenomena and could significantly benefit the design of high gradient accelerator structures.

  12. Electrical breakdown of water in microgaps

    International Nuclear Information System (INIS)

    Schoenbach, Karl; Kolb, Juergen; Xiao Shu; Katsuki, Sunao; Minamitani, Yasushi; Joshi, Ravindra

    2008-01-01

    Experimental and modeling studies on electrical breakdown in water in submillimeter gaps between pin and plane electrodes have been performed. Prebreakdown, breakdown and recovery of the water gaps were studied experimentally by using optical and electrical diagnostics with a temporal resolution on the order of one nanosecond. By using Mach-Zehnder interferometry, the electric field distribution in the prebreakdown phase was determined by means of the Kerr effect. Electric fields values in excess of the computed electric fields, which reach >4 MV cm -1 for applied electrical pulses of 20 ns duration, were recorded at the tip of the pin electrode, an effect which can be explained by a reduced permittivity of water at high electric fields. Breakdown of the gaps, streamer-to-arc transition, was recorded by means of high-speed electrical diagnostics, and through high-speed photography. It was shown, through simulations, that breakdown is initiated by field emission at the interface of preexisting microbubbles. Impact ionization within the micro-bubble's gas then contributes to plasma development. Experiments using pulse-probe methods and Schlieren diagnostics allowed us to follow the development of the disturbance caused by the breakdown over a time of more than milliseconds and to determine the recovery time of a water switch. In order to trigger water switches a trigger electrode with a triple point has been utilized. The results of this research have found application in the construction of compact pulse power generators for bioelectric applications.

  13. Dielectric breakdown of ultrathin aluminum oxide films induced by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Magtoto, N. P.; Niu, C.; Ekstrom, B. M.; Addepalli, S.; Kelber, J. A.

    2000-01-01

    Dielectric breakdown of 7-Aa-thick Al 2 O 3 (111) films grown on Ni 3 Al(111) under ultrahigh vacuum conditions is induced by increasing the bias voltage on the scanning tunneling microscopy tip under constant current feedback. Breakdown is marked by the precipitous retreat of the tip from the surface, and the formation of an elevated feature in the scanning tunneling microscopy image, typically greater than 5 nm high and ∼100 nm in diameter. Constant height measurements performed at tip/sample distances of 1 nm or less yield no tip/substrate physical interaction, indicating that such features do not result from mass transport. Consistent with this, current/voltage measurements within the affected regions indicate linear behavior, in contrast to a band gap of 1.5 eV observed at unaffected regions of the oxide surface. A threshold electric field value of 11±1 MV cm -1 is required to induce breakdown, in good agreement with extrapolated values from capacitance measurements on thicker oxides. (c) 2000 American Institute of Physics

  14. Instrumental Developments for In-situ Breakdown Experiments inside a Scanning Electron Microscope

    CERN Document Server

    Muranaka, T; Leifer, K; Ziemann, V

    2011-01-01

    Electrical discharges in accelerating structures are one of the key issues limiting the performance of future high energy accelerators such as the Compact Linear Collider (CLIC). Fundamental understanding of breakdown phenomena is an indispensable part of the CLIC feasibility study. The present work concerns the experimental study of breakdown using Scanning Electron Microscopes (SEMs). A SEM gives us the opportunity to achieve high electrical gradients of 1\\,kV/$\\mu$m which corresponds to 1\\,GV/m by exciting a probe needle with a high voltage power supply and controlling the positioning of the needle with a linear piezo motor. The gap between the needle tip and the surface is controlled with sub-micron precision. A second electron microscope equipped with a Focused Ion Beam (FIB) is used to create surface corrugations and to sharpen the probe needle to a tip radius of about 50\\,nm. Moreover it is used to prepare cross sections of a voltage breakdown area in order to study the geometrical surface damages as w...

  15. Maximized Effective Energy Output of Contact-Separation-Triggered Triboelectric Nanogenerators as Limited by Air Breakdown

    KAUST Repository

    Zi, Yunlong; Wu, Changsheng; Ding, Wenbo; Wang, Zhong Lin

    2017-01-01

    Recent progress in triboelectric nanogenerators (TENGs) has demonstrated their promising potential as a high-efficiency mechanical energy harvesting technology, and plenty of effort has been devoted to improving the power output by maximizing the triboelectric surface charge density. However, due to high-voltage air breakdown, most of the enhanced surface charge density brought by material/surface optimization or external ion injection is not retainable or usable for electricity generation during the operation of contact-separation-triggered TENGs. Here, the existence of the air breakdown effect in a contact-separation mode TENG with a low threshold surface charge density of ≈40–50 µC m−2 is first validated under the high impedance external load, and then followed by the theoretical study of the maximized effective energy output as limited by air breakdown for contact-separation-triggered TENGs. The effects of air pressure and gas composition are also studied and propose promising solutions for reducing the air breakdown effect. This research provides a crucial fundamental study for TENG technology and its further development and applications.

  16. Maximized Effective Energy Output of Contact-Separation-Triggered Triboelectric Nanogenerators as Limited by Air Breakdown

    KAUST Repository

    Zi, Yunlong

    2017-05-02

    Recent progress in triboelectric nanogenerators (TENGs) has demonstrated their promising potential as a high-efficiency mechanical energy harvesting technology, and plenty of effort has been devoted to improving the power output by maximizing the triboelectric surface charge density. However, due to high-voltage air breakdown, most of the enhanced surface charge density brought by material/surface optimization or external ion injection is not retainable or usable for electricity generation during the operation of contact-separation-triggered TENGs. Here, the existence of the air breakdown effect in a contact-separation mode TENG with a low threshold surface charge density of ≈40–50 µC m−2 is first validated under the high impedance external load, and then followed by the theoretical study of the maximized effective energy output as limited by air breakdown for contact-separation-triggered TENGs. The effects of air pressure and gas composition are also studied and propose promising solutions for reducing the air breakdown effect. This research provides a crucial fundamental study for TENG technology and its further development and applications.

  17. Impact of Machine Breakdowns on Productivity

    Directory of Open Access Journals (Sweden)

    Anwaruddin Tanwari

    2011-10-01

    Full Text Available This paper reports the machine breakdowns and their impact on the total productivity for the FMCGs (Fast Moving Consumer Goods industry because higher productivity rate is important factor on which the customer services largely depend in this competitive business world. This paper also suggests that the machine breakdowns and other related problems within the plant are due to improper care, keeping the plant operative for twenty four hours a day, seven days a week without any break and lack of management\\'s concentration towards these issues. These break-downs results in un-timely closure of the plant and very poor production performance is achieved in the plant that affects the service level at great level. Realising the importance of maintenance in improving productivity and service, an attempt has been made in this paper to study the scope of maintenance with the help of a case study.

  18. Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate

    Science.gov (United States)

    Choi, J.-H.; Cho, C.-H.; Cha, H.-Y.

    2018-06-01

    Gallium oxide (Ga2O3) based vertical Schottky barrier diodes (SBDs) were designed for high voltage switching applications. Since p-type Ga2O3 epitaxy growth or p-type ion implantation technique has not been developed yet, a field plate structure was employed in this study to maximize the breakdown voltage by suppressing the electric field at the anode edge. TCAD simulation was used for the physical analysis of Ga2O3 SBDs from which it was found that careful attention must be paid to the insulator under the field plate. Due to the extremely high breakdown field property of Ga2O3, an insulator with both high permittivity and high breakdown field must be used for the field plate formation.

  19. Experimental Results of Thin-Film Photovoltaic Cells in a Low Density LEO Plasma Environment: Ground Tests

    Science.gov (United States)

    Galofaro, Joel T.; Vayner, Boris V.

    2006-01-01

    Plasma ground testing results, conducted at the Glenn Research Center (GRC) National Plasma Interaction (N-PI) Facility, are presented for a number of thin-film photovoltaic cells. The cells represent a mix of promising new technologies identified by the Air Force Research Laboratory (AFRL) under the CYGNUS Space Science Technology Experiment (SSTE-4) Program. The current ground tests are aimed at characterizing the performance and survivability of thin film technologies in the harsh low earth orbital space environment where they will be flown. Measurements of parasitic current loss, charging/dielectric breakdown of cover-slide coatings and arcing threshold tests are performed for each individual cell. These measurements are followed by a series of experiments designed to test for catastrophic arc failure mechanisms. A special type of power supply, called a solar array simulator (SAS) with adjustable voltage and current limits on the supply s output, is employed to bias two adjacent cells at a predetermined voltage and current. The bias voltage is incrementally ramped up until a sustained arc results. Sustained arcs are precursors to catastrophic arc failure where the arc current rises to a maximum value for long timescales often ranging between 30 to 100 sec times. Normal arcs by comparison, are short lived events with a timescale between 10 to 30 sec. Sustained arcs lead to pyrolization with extreme cell damage and have been shown to cause the loss of entire array strings in solar arrays. The collected data will be used to evaluate the suitability of thin-film photovoltaic technologies for future space operations.

  20. NASA Work Breakdown Structure (WBS) Handbook

    Science.gov (United States)

    Terrell, Stefanie M.

    2018-01-01

    The purpose of this document is to provide program/project teams necessary instruction and guidance in the best practices for Work Breakdown Structure (WBS) and WBS dictionary development and use for project implementation and management control. This handbook can be used for all types of NASA projects and work activities including research, development, construction, test and evaluation, and operations. The products of these work efforts may be hardware, software, data, or service elements (alone or in combination). The aim of this document is to assist project teams in the development of effective work breakdown structures that provide a framework of common reference for all project elements.

  1. Project management strategies for prototyping breakdowns

    DEFF Research Database (Denmark)

    Granlien, Maren Sander; Pries-Heje, Jan; Baskerville, Richard

    2009-01-01

    , managing the explorative and iterative aspects of prototyping projects is not a trivial task. We examine the managerial challenges in a small scale prototyping project in the Danish healthcare sector where a prototype breakdown and project escalation occurs. From this study we derive a framework...... of strategies for coping with escalation in troubled prototyping projects; the framework is based on project management triangle theory and is useful when considering how to manage prototype breakdown and escalation. All strategies were applied in the project case at different points in time. The strategies led...

  2. Vortex breakdown in a supersonic jet

    Science.gov (United States)

    Cutler, Andrew D.; Levey, Brian S.

    1991-01-01

    This paper reports a study of a vortex breakdown in a supersonic jet. A supersonic vortical jets were created by tangential injection and acceleration through a convergent-divergent nozzle. Vortex circulation was varied, and the nature of the flow in vortical jets was investigated using several types of flow visualization, including focusing schlieren and imaging of Rayleigh scattering from a laser light sheet. Results show that the vortical jet mixed much more rapidly with the ambient air than a comparable straight jet. When overexpanded, the vortical jet exhibited considerable unsteadiness and showed signs of vortex breakdown.

  3. Breakdowns in Coordination Between Air Traffic Controllers

    Science.gov (United States)

    Bearman, Chris; Orasanu, Judith; Miller, Ronald C.

    2011-01-01

    This talk outlines the complexity of coordination in air traffic control, introduces the NextGen technologies, identifies common causes for coordination breakdowns in air traffic control and examines whether these causes are likely to be reduced with the introduction of NextGen technologies. While some of the common causes of breakdowns will be reduced in a NextGen environment this conclusion should be drawn carefully given the current stage of development of the technologies and the observation that new technologies often shift problems rather than reduce them.

  4. Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for conductive atomic force microscopy investigations

    International Nuclear Information System (INIS)

    Frammelsberger, Werner; Benstetter, Guenther; Stamp, Richard; Kiely, Janice; Schweinboeck, Thomas

    2005-01-01

    As charge tunnelling through thin and ultra-thin silicon dioxide layers is regarded as the driving force for MOS device degradation the determination and characterisation of electrically week spots is of paramount importance for device reliability and failure analysis. Conductive atomic force microscopy (C-AFM) is able to address this issue with a spatial resolution smaller than the expected breakdown spot. For the determination of the electrically active oxide thickness in practice an easy to use model with sufficient accuracy and which is largely independent of the oxide thickness is required. In this work a simplified method is presented that meets these demands. The electrically active oxide thickness is determined by matching of C-AFM voltage-current curves and a tunnelling current model, which is based on an analytical tunnelling current approximation. The model holds for both the Fowler-Nordheim tunnelling and the direct tunnelling regime with one single tunnelling parameter set. The results show good agreement with macroscopic measurements for gate voltages larger than approximately 0.5-1 V, and with microscopic C-AFM measurements. For this reason arbitrary oxides in the DT and the FNT regime may be analysed with high lateral resolution by C-AFM, without the need of a preselection of the tunnelling regime to be addressed

  5. based dynamic voltage restorer

    African Journals Online (AJOL)

    HOD

    operation due to presence of increased use of nonlinear loads (computers, microcontrollers ... simulations of a dynamic voltage restorer (DVR) was achieved using MATLAB/Simulink. ..... using Discrete PWM generator, then the IGBT inverter.

  6. Dielectric-breakdown tests of water at 6 MV

    Directory of Open Access Journals (Sweden)

    W. A. Stygar

    2009-01-01

    Full Text Available We have conducted dielectric-breakdown tests on water subject to a single unipolar pulse. The peak voltages used for the tests range from 5.8 to 6.8 MV; the effective pulse widths range from 0.60 to 1.1  μs; and the effective areas tested range from 1.8×10^{5} to 3.6×10^{6}  cm^{2}. The tests were conducted on water-insulated coaxial capacitors. The two electrodes of each capacitor have outer and inner radii of 99 and 56 cm, respectively. Results of the tests are consistent with predictions of the water-dielectric-breakdown relation developed in [Phys. Rev. ST Accel. Beams 9, 070401 (2006PRABFM1098-440210.1103/PhysRevSTAB.9.070401].

  7. Note: Tesla based pulse generator for electrical breakdown study of liquid dielectrics

    Science.gov (United States)

    Veda Prakash, G.; Kumar, R.; Patel, J.; Saurabh, K.; Shyam, A.

    2013-12-01

    In the process of studying charge holding capability and delay time for breakdown in liquids under nanosecond (ns) time scales, a Tesla based pulse generator has been developed. Pulse generator is a combination of Tesla transformer, pulse forming line, a fast closing switch, and test chamber. Use of Tesla transformer over conventional Marx generators makes the pulse generator very compact, cost effective, and requires less maintenance. The system has been designed and developed to deliver maximum output voltage of 300 kV and rise time of the order of tens of nanoseconds. The paper deals with the system design parameters, breakdown test procedure, and various experimental results. To validate the pulse generator performance, experimental results have been compared with PSPICE simulation software and are in good agreement with simulation results.

  8. Low-voltage gyrotrons

    International Nuclear Information System (INIS)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-01-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5–10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%–2% in the submillimeter wavelength region).

  9. A Model for the Onset of Vortex Breakdown

    Science.gov (United States)

    Mahesh, K.

    1996-01-01

    A large body of information exists on the breakdown of incompressible streamwise vortices. Less is known about vortex breakdown at high speeds. An interesting example of supersonic vortex breakdown is the breakdown induced by the interaction of vortices with shock waves. The flow in supersonic engine inlets and over high-speed delta wings constitute technologically important examples of this phenomenon, which is termed 'shock-induced vortex breakdown'. In this report, we propose a model to predict the onset of shock-induced vortex breakdown. The proposed model has no adjustable constants, and is compared to both experiment and computation. The model is then extended to consider two other problems: the breakdown of a free compressible vortex, and free incompressible vortex breakdown. The same breakdown criterion is used in all three problems to predict the onset of breakdown. Finally, a new breakdown map is proposed that allows the simultaneous comparison of data from flows ranging from incompressible breakdown to breakdown induced by a shock wave.

  10. Analysis of breakdown on thermal and electrical measurements for SPIDER accelerating grids

    Energy Technology Data Exchange (ETDEWEB)

    Pesce, Alberto, E-mail: alberto.pesce@igi.cnr.it [Consorzio RFX - Associazione EURATOM-ENEA per la fusione, Corso Stati Uniti 4, 35127 Padova (Italy); Pomaro, Nicola [Consorzio RFX - Associazione EURATOM-ENEA per la fusione, Corso Stati Uniti 4, 35127 Padova (Italy)

    2011-10-15

    The PRIMA test facility, under realization in Padova, includes a full size plasma source prototype for ITER, called SPIDER (Source for the Production of Ions of Deuterium Extracted from Radio Frequency plasma). The effects of breakdown in the electrical insulation inside the ion source are analyzed with particular care to the embedded diagnostic system, i.e. the thermal and electrical measurements installed on the grids and ion source case and transferred by multipolar cables to the acquisition system, located inside the 100 kV insulated deck and hosting the ion source power supply, the signal conditioning and the acquisition cubicles. The breakdown affects strongly the measurements, so it has to be mitigated in order to guarantee adequate reliability of the whole measurement set. A parametric study has been carried out on a detailed circuital model for fast transients, implemented using SimPowerSystems{sup TM} tool of Matlab Simulink code. The model includes all the relevant conductors of the subsystems downstream the insulating transformer of the Accelerating Grids Power Supply (AGPS), i.e. the AGPS rectifier, the multipolar transmission line, the 100 kV High Voltage Deck, the ion source power supply and the ion source itself. In particular all the magnetic and capacitive couplings have been computed by a proper 2D fem model. The optimization of the cabling layout, of the wire screening and of the protection devices, like surge arresters and resistors, has been carried out through the accurate modeling of the circuit. The energy dissipated on each ion source surge arrester is estimated and adequate TSD (transient suppression devices) are selected. A peculiar and difficult to satisfy requirement is the high number of surges that the TSD has to withstand. Breakdowns between components polarized at different voltages have been considered, in order to inspect the worst condition during a breakdown.

  11. Spontaneous symmetry breakdown in gauge theories

    International Nuclear Information System (INIS)

    Scadron, M.D.

    1982-01-01

    The dynamical theory of spontaneous breakdown correctly predicts the bound states and relates the order parameters of electron-photon superconductivity and quark-gluon chiral symmetry. A similar statement cannot be made for the standard electro-weak gauge symmetry. (author)

  12. Vortex breakdown in a truncated conical bioreactor

    DEFF Research Database (Denmark)

    Balci, Adnan; Brøns, Morten; Herrada, Miguel A.

    2015-01-01

    . It is found that the sidewall convergence (divergence) from the top to the bottom stimulates (suppresses) the development of vortex breakdown (VB) in both water and air. At α = 60°, the flow topology changes eighteen times as Hw varies. The changes are due to (a) competing effects of AMF (the air meridional...

  13. Investigation of multipactor breakdown in communication satellite

    Indian Academy of Sciences (India)

    Multipactor breakdown or multipactor discharge is a form of high frequency discharge that may occur in microwave components operating at very low pressures. Some RF components of multi-channel communication satellites have co-axial geometry and handle high RF power under near-vacuum conditions.

  14. Breakdown and bad luck in Biblis

    International Nuclear Information System (INIS)

    Randow, G. von.

    1994-01-01

    Five minor breakdowns within a month have heated up the dispute between the ministries of the environment of the Federation and the Land of Hesse. Biblis A is to be shut down at all costs. As yet, however, the Hessian Ministry of the Environment has not solved the question of how to compensate the power cut. (DG) [de

  15. Electrical breakdown phenomena of dielectric elastomers

    DEFF Research Database (Denmark)

    Yu, Liyun; Mateiu, Ramona Valentina; Skov, Anne Ladegaard

    2017-01-01

    years. However, optimization with respect to the dielectric permittivity solely may lead to other problematic phenomena such as premature electrical breakdown. In this work, we focus on the chloro propyl functionalized silicone elastomers prepared in Madsen et al[2] and we investigate the electrical...

  16. Fear of breakdown and the unlived life.

    Science.gov (United States)

    Ogden, Thomas H

    2014-04-01

    Winnicott's Fear of breakdown is an unfinished work that requires that the reader be not only a reader, but also a writer of this work which often gestures toward meaning as opposed to presenting fully developed ideas. The author's understanding of the often confusing, sometimes opaque, argument of Winnicott's paper is as follows. In infancy there occurs a breakdown in the mother-infant tie that forces the infant to take on, by himself, emotional events that he is unable to manage. He short-circuits his experience of primitive agony by generating defense organizations that are psychotic in nature, i.e., they substitute self-created inner reality for external reality, thus foreclosing his actually experiencing critical life events. By not experiencing the breakdown of the mother-infant tie when it occurred in infancy, the individual creates a psychological state in which he lives in fear of a breakdown that has already happened, but which he did not experience. The author extends Winnicott's thinking by suggesting that the driving force of the patient's need to find the source of his fear is his feeling that parts of himself are missing and that he must find them if he is to become whole. What remains of his life feels to him like a life that is mostly an unlived life. Copyright © 2014 Institute of Psychoanalysis.

  17. Enhanced shock wave generation via pre-breakdown acceleration using water electrolysis in negative streamer pulsed spark discharges

    Science.gov (United States)

    Lee, Kern; Chung, Kyoung-Jae; Hwang, Y. S.

    2018-03-01

    This paper presents a method for enhancement of shock waves generated from underwater pulsed spark discharges with negative (anode-directed) subsonic streamers, for which the pre-breakdown process is accelerated by preconditioning a gap with water electrolysis. Hydrogen microbubbles are produced at the cathode by the electrolysis and move towards the anode during the preconditioning phase. The numbers and spatial distributions of the microbubbles vary with the amplitude and duration of each preconditioning pulse. Under our experimental conditions, the optimum pulse duration is determined to be ˜250 ms at a pulse voltage of 400 V, where the buoyancy force overwhelms the electric force and causes the microbubbles to be swept out from the water gap. When a high-voltage pulse is applied to the gap just after the preconditioning pulse, the pre-breakdown process is significantly accelerated in the presence of the microbubbles. At the optimum preconditioning pulse duration, the average breakdown delay is reduced by 87% and, more importantly, the energy consumed during the pre-breakdown period decreases by 83%. This reduced energy consumption during the pre-breakdown period, when combined with the morphological advantages of negative streamers, such as thicker and longer stalks, leads to a significant improvement in the measured peak pressure (˜40%) generated by the underwater pulsed spark discharge. This acceleration of pre-breakdown using electrolysis overcomes the biggest drawback of negative subsonic discharges, which is slow vapor bubble formation due to screening effects, and thus enhances the efficiency of the shock wave generation process using pulsed spark discharges in water.

  18. Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

    International Nuclear Information System (INIS)

    Onufriyev, Valery V.

    2001-01-01

    It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient--γ i with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure p cs ) and cathode temperature T k is constant too (U b =constant with T k =constant and p cs =constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-p cs and cathode temperature-T k and is independent on IEG length--Δ ieg . On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly--the region of excited atoms--''Aston glow.''

  19. Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

    Science.gov (United States)

    Onufriyev, Valery. V.

    2001-02-01

    It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient-γi with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure pcs) and cathode temperature Tk is constant too (Ub=constant with Tk=constant and pcs=constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-pcs and cathode temperature-Tk and is independent on IEG length-Δieg. On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly-the region of excited atoms-``Aston glow.'' .

  20. Numerical Borehole Breakdown Investigations using XFEM

    Science.gov (United States)

    Beckhuis, Sven; Leonhart, Dirk; Meschke, Günther

    2016-04-01

    During pressurization of a wellbore a typical downhole pressure record shows the following regimes: first the applied wellbore pressure balances the reservoir pressure, then after the compressive circumferential hole stresses are overcome, tensile stresses are induced on the inside surface of the hole. When the magnitude of these stresses reach the tensile failure stress of the surrounding rock medium, a fracture is initiated and propagates into the reservoir. [1] In standard theories this pressure, the so called breakdown pressure, is the peak pressure in the down-hole pressure record. However experimental investigations [2] show that the breakdown did not occur even if a fracture was initiated at the borehole wall. Drilling muds had the tendency to seal and stabilize fractures and prevent fracture propagation. Also fracture mechanics analysis of breakdown process in mini-frac or leak off tests [3] show that the breakdown pressure could be either equal or larger than the fracture initiation pressure. In order to gain a deeper understanding of the breakdown process in reservoir rock, numerical investigations using the extended finite element method (XFEM) for hydraulic fracturing of porous materials [4] are discussed. The reservoir rock is assumed to be pre-fractured. During pressurization of the borehole, the injection pressure, the pressure distribution and the position of the highest flux along the fracture for different fracturing fluid viscosities are recorded and the influence of the aforementioned values on the stability of fracture propagation is discussed. [1] YEW, C. H. (1997), "Mechanics of Hydraulic Fracturing", Gulf Publishing Company [2] MORITA, N.; BLACK, A. D.; FUH, G.-F. (1996), "Borehole Breakdown Pressure with Drilling Fluids". International Journal of Rock Mechanics and Mining Sciences 33, pp. 39-51 [3] DETOURNAY, E.; CARBONELL, R. (1996), "Fracture Mechanics Analysis of the Breakdown Process in Minifrac or Leakoff Test", Society of Petroleum

  1. Mechanistic interaction study of thin oxide dielectric with conducting organic electrode

    International Nuclear Information System (INIS)

    Sharma, Himani; Sethi, Kanika; Raj, P. Markondeya; Gerhardt, R.A.; Tummala, Rao

    2012-01-01

    Highlights: ► Thin film-oxide dielectric-organic electrode interface studies for investigating the leakage mechanism. ► XPS to elucidate chemical-structural changes on dielectric oxide surface. ► Correlates structural characterization data with capacitor leakage current and impedance spectroscopy characteristics. - Abstract: This paper aims at understanding the interaction of intrinsic conducting polymer, PEDT, with ALD-deposited Al 2 O 3 and thermally oxidized Ta 2 O 5 dielectrics, and the underlying mechanisms for increase in leakage currents in PEDT-based capacitors. Conducting polymers offer several advantages as electrodes for high surface area capacitors because of their lower resistance, self-healing and enhanced conformality. However, capacitors with in situ polymerized PEDT show poor electrical properties that are attributed to the interfacial interaction between the organic electrode and the oxide dielectric. This study focuses on characterizing these interactions. A combination of compositional, structural and electrical characterization techniques was applied to polymer-solid-state-capacitor to understand the interfacial chemical behavior and dielectric property deterioration of alumina and tantalum-oxide films. XPS and impedance studies were employed to understand the stiochiometric and compositional changes that occur in the dielectric film on interaction with in situ deposited PEDT. Based on the observations from several complimentary techniques, it is concluded that tantalum-pentoxide has more resistance towards chemical interaction with in situ polymerized PEDT. The thermally oxidized Ta 2 O 5 -PEDT system showed leakage current of 280 nA μF −1 at 3 V with a breakdown voltage of 30 V. On the other hand, Al 2 O 3 -PEDT capacitor showed leakage current of 50 μA μF −1 and a breakdown voltage of 40 V. The study reports direct evidence for the mechanism of resistivity drop in alumina dielectric with in situ polymerized PEDT electrode.

  2. Evidence for oxygen vacancy manipulation in La1/3Sr2/3FeO3− thin films via voltage controlled solid-state ionic gating

    Directory of Open Access Journals (Sweden)

    A. L. Krick

    2017-04-01

    Full Text Available Reversible changes of the structural and electronic transport properties of La1/3Sr2/3FeO3-δ/Gd-doped CeO2 heterostructures arising from the manipulation of δ are presented. Thermally induced oxygen loss leads to a c-axis lattice expansion and an increase in resistivity in a La1/3Sr2/3FeO3-δ film capped with Gd-doped CeO2. In a three-terminal device where a gate bias is applied across the Gd-doped CeO2 layer to alter the La1/3Sr2/3FeO3-δ oxygen stoichiometry, the ferrite channel is shown to undergo a change in resistance of an order of magnitude using gate voltages of less than 1 V applied at 500 K. The changes in resistance remain upon cooling to room temperature, in the absence of a gate bias, suggesting solid state ionic gating of perovskite oxides as a promising platform for applications in non-volatile, multistate devices.

  3. Improving Breakdown Behavior by Substrate Bias in a Novel Double Epi-layer Lateral Double Diffused MOS Transistor

    International Nuclear Information System (INIS)

    Li Qi; Wang Wei-Dong; Liu Yun; Wei Xue-Ming

    2012-01-01

    A new lateral double diffused MOS (LDMOS) transistor with a double epitaxial layer formed by an n-type substrate and a p-type epitaxial layer is reported (DEL LDMOS). The mechanism of the improved breakdown characteristic is that the high electric field around the drain is reduced by substrate reverse bias, which causes the redistribution of the bulk electric field in the drift region, and the vertical blocking voltage is shared by the drain side and the source side. The numerical results indicate that the trade-off between breakdown voltage and on-resistance of the proposed device is improved greatly in comparison to that of the conventional LDMOS. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. A breakdown enhanced AlGaN/GaN MISFET with source-connected P-buried layer

    Science.gov (United States)

    Luo, Xin; Wang, Ying; Cao, Fei; Yu, Cheng-Hao; Fei, Xin-Xing

    2017-12-01

    This paper presents a breakdown-enhanced AlGaN/GaN MISFET with a source-connected P-buried layer combined with field plates (SC-PBL FPs MISFET). A TCAD tool was used to analyze the breakdown characteristics of the proposed structure, and results show that in comparison to the conventional gate field plate MISFET (GFP-C MISFET), the proposed structure provides a significant increase of breakdown voltage (VBK) due to redistribution of electric field in the gate-drain region induced by the SC-PBL and the FPs. The optimized SC-PBL FPs MISFET with a gate-drain spacing of 6 μm achieved a high Baliga's figure of merit of 2.6 GW cm-2 with a corresponding breakdown voltage (VBK) of 1311.62 V and specific on resistance (RON,sp) of 0.66 mΩ cm2, which demonstrates a good trade-off between RON,sp and VBK compared to the GFP-C MISFET with VBK of 524.27 V and RON,sp of 0.61 mΩ cm2.

  5. Design considerations and data for gas-insulated high voltage structures

    International Nuclear Information System (INIS)

    Hopkins, D.B.

    1975-11-01

    This paper is intended to benefit the person faced with the occasional task of designing gas insulated high-voltage structures or spark gaps and who must decide upon the proper geometry, spacings, gas type, and pressure for reliable voltage-holding. An approach is presented along with a summary of how various factors affect voltage breakdown. The design procedures described apply to situations where the influence of nearby insulators is negligible. The accuracy of the data is estimated to be within 10 to 15 percent, a value usually attained in practice only when one follows the cautionary advice discussed in the paragraphs on materials preparation, gas properties, and conditioning

  6. Device for monitoring cell voltage

    Science.gov (United States)

    Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  7. A computational study of the taxonomy of vortex breakdown

    Science.gov (United States)

    Spall, Robert E.; Gatski, Thomas B.

    1990-01-01

    The results of a fully three-dimensional numerical simulation of vortex breakdown using the unsteady, incompressible Navier-Stokes equations are presented. The solutions show that the freestream axial velocity distribution has a significant effect on the position and type of vortex breakdown. Common features between bubble-type and spiral-type breakdown are identified and the role of flow stagnation and the critical state are discussed as complimentary ideas describing the initiation of breakdown.

  8. Amplitude−temporal characteristics of a supershort avalanche electron beam generated during subnanosecond breakdown in air and nitrogen

    Energy Technology Data Exchange (ETDEWEB)

    Tarasenko, V. F., E-mail: vft@loi.hcei.tsc.ru; Baksht, E. Kh.; Beloplotov, D. V.; Burachenko, A. G.; Lomaev, M. I. [Siberian Branch, Russian Academy of Sciences, Institute of High Current Electronics (Russian Federation)

    2016-04-15

    The amplitude−temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude−temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.

  9. Amplitude-temporal characteristics of a supershort avalanche electron beam generated during subnanosecond breakdown in air and nitrogen

    Science.gov (United States)

    Tarasenko, V. F.; Baksht, E. Kh.; Beloplotov, D. V.; Burachenko, A. G.; Lomaev, M. I.

    2016-04-01

    The amplitude-temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude-temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.

  10. Analysis of copper contamination in transformer insulating material with nanosecond- and femtosecond-laser-induced breakdown spectroscopy

    Science.gov (United States)

    Aparna, N.; Vasa, N. J.; Sarathi, R.

    2018-06-01

    This work examines the oil-impregnated pressboard insulation of high-voltage power transformers, for the determination of copper contamination. Nanosecond- and femtosecond-laser-induced breakdown spectroscopy revealed atomic copper lines and molecular copper monoxide bands due to copper sulphide diffusion. X-ray diffraction studies also indicated the presence of CuO emission. Elemental and molecular mapping compared transformer insulating material ageing in different media—air, N2, He and vacuum.

  11. An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS

    International Nuclear Information System (INIS)

    Hu Xia-Rong; Lü Rui

    2014-01-01

    In this paper, an analytical model for the vertical electric field distribution and optimization of a high voltage-reduced bulk field (REBULF) lateral double-diffused metal—oxide-semiconductor (LDMOS) transistor is presented. The dependences of the breakdown voltage on the buried n-layer depth, thickness, and doping concentration are discussed in detail. The REBULF criterion and the optimal vertical electric field distribution condition are derived on the basis of the optimization of the electric field distribution. The breakdown voltage of the REBULF LDMOS transistor is always higher than that of a single reduced surface field (RESURF) LDMOS transistor, and both analytical and numerical results show that it is better to make a thick n-layer buried deep into the p-substrate. (interdisciplinary physics and related areas of science and technology)

  12. Shootthrough fault protection system for bipolar transistors in a voltage source transistor inverter

    International Nuclear Information System (INIS)

    Wirth, W.F.

    1982-01-01

    Faulted bipolar transistors in a voltage source transistor inverter are protected against shootthrough fault current, from the filter capacitor of the d-c voltage source which drives the inverter over the d-c bus, by interposing a small choke in series with the filter capacitor to limit the rate of rise of that fault current while at the same time causing the d-c bus voltage to instantly drop to essentially zero volts at the beginning of a shootthrough fault. In this way, the load lines of the faulted transistors are effectively shaped so that they do not enter the second breakdown area, thereby preventing second breakdown destruction of the transistors

  13. Piezoelectric transformers for low-voltage generation of gas discharges and ionic winds in atmospheric air

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Michael J. [Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States); Go, David B., E-mail: dgo@nd.edu [Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States); Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States)

    2015-12-28

    To generate a gas discharge (plasma) in atmospheric air requires an electric field that exceeds the breakdown threshold of ∼30 kV/cm. Because of safety, size, or cost constraints, the large applied voltages required to generate such fields are often prohibitive for portable applications. In this work, piezoelectric transformers are used to amplify a low input applied voltage (<30 V) to generate breakdown in air without the need for conventional high-voltage electrical equipment. Piezoelectric transformers (PTs) use their inherent electromechanical resonance to produce a voltage amplification, such that the surface of the piezoelectric exhibits a large surface voltage that can generate corona-like discharges on its corners or on adjacent electrodes. In the proper configuration, these discharges can be used to generate a bulk air flow called an ionic wind. In this work, PT-driven discharges are characterized by measuring the discharge current and the velocity of the induced ionic wind with ionic winds generated using input voltages as low as 7 V. The characteristics of the discharge change as the input voltage increases; this modifies the resonance of the system and subsequent required operating parameters.

  14. High Voltage GaN Schottky Rectifiers

    Energy Technology Data Exchange (ETDEWEB)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  15. Technique for increasing gate-drain breakdown voltage of ion-implanted JFET

    International Nuclear Information System (INIS)

    Schrantz, G.A.

    1987-01-01

    A semiconductor device is described comprising: a semiconductor substrate of a first conductivity type; a first semiconductor region of a second conductivity type; opposite the first conductivity type, formed in a first surface portion of the substrate; a second semiconductor region of the second conductivity type, formed in a second surface portion of the substrate, spaced apart from the first surface portion by a third surface portion; and a third semiconductor region of the conductivity type formed in the third surface portion of the substrate and being contiguous with the first and second regions so as to define therewith respective first and second PN junctions. A first portion of the third semiconductor region is spaced apart from the first and second PN junctions by a second portion of the third semiconductor region contiguous with and extending a separation distance away from the first and second PN junctions to the first portion of the third semiconductor region. The first portion of the third semiconductor region has a first impurity concentration, and wherein the second proton of the third semiconductor region has a second impurity concentration less than the first impurity concentration and the profile of which second impurity concentration of the second portion of the third surface portion of the substrate in which the third semiconductor region is formed is effectively constant across the separation distance between the first and second PN junctions and the first portion of the third semiconductor region; and a fourth semiconductor region of the second conductivity type is disposed in the substrate beneath the third surface portion to be contiguous with each of the first, second and third semiconductor regions and defining a third PN junction with the third semiconductor region

  16. Positive Temperature Coefficient of Breakdown Voltage in 4H-SiC PN Junction Rectifiers

    National Research Council Canada - National Science Library

    Neudeck, Philip

    1998-01-01

    ...-suited SiC polytype for power device implementation. This paper reports the first experimental measurements of stable positive temperature coefficient behavior observed in 4H-SiC pn junction rectifiers...

  17. Numerical modeling of post current-zero dielectric breakdown in a low voltage circuit breaker

    Science.gov (United States)

    Thenkarai Narayanan, Venkat raman

    Oral delivery of macromolecular therapeutics has remained a challenge. Various factors govern principles of oral absorption, including solubility, tissue permeability, stability and dynamics of the gastrointestinal environment. Developing a macromolecular drug carrier for poorly bioavailable drugs is highly desirable. Dendritic polymers are attractive drug delivery vehicles because of their multifunctional surface groups, globular conformation, branched architecture, low poly dispersity and hydrophilic nature. They also offer traditional benefits of macromolecular systems such as extended plasma residence time and reduced systemic toxicity. Developing a poly(amido amine) (PAMAM) dendrimer-based oral drug delivery vehicle is the long-term goal of this research. PAMAM dendrimers can offer advantages in terms of improving solubility and permeability that can ultimately enhance oral absorption of poorly bioavailable drugs. In this dissertation, first the safety and maximum tolerated dose of six different PAMAM dendrimers was studied after oral and systemic administration. Surface charge of these dendrimers significantly influenced their toxicity profile in vivo with cationic systems proving to be more toxic than anionic systems. The inherent permeability of native anionic dendrimers was then evaluated in a mouse model to assess their potential in oral drug delivery. Results suggested that anionic G6.5 dendrimers exhibited appreciable bioavailability with partial degradation observed under in vivo conditions. Subsequently, camptothecin, a model drug used for the treatment of colorectal carcinoma, was attached to PAMAM dendrimers. Antitumor activity revealed that these conjugates were effective in inhibiting growth of cancer cells in vitro. Preliminary efficacy studies conducted in xenograft tumor models also indicated that dendrimer-drug conjugates have potential for oral chemotherapy. Further detailed in vivo studies are needed to demonstrate the utility of PAMAM-drug conjugates for effective and safe delivery of chemotherapeutics by the oral route.

  18. Prevention of breakdown behind railgun projectiles

    International Nuclear Information System (INIS)

    Hawke, R.S.

    1992-01-01

    An electromagnetic railgun accelerator system, for accelerating projectiles by a plasma arc, introduces a breakdown inhibiting gas into the railgun chamber behind the accelerating projectile. The breakdown inhibiting gas, which absorbs electrons, is a halide or a halide compound such as fluorine or SF 6 . The gas is introduced between the railgun rails after the projectile has passed through inlets in the rails or the projectile; by coating the rails or the projectile with a material which releases the gas after the projectile passes over it; by fabricating the rails or the projectile or insulators out of a material which releases the gas into the portions of the chamber through which the projectile has travelled. The projectile may have a cavity at its rear to control the release of ablation products. 12 figs

  19. Supersonic quasi-axisymmetric vortex breakdown

    Science.gov (United States)

    Kandil, Osama A.; Kandil, Hamdy A.; Liu, C. H.

    1991-01-01

    An extensive computational study of supersonic quasi-axisymmetric vortex breakdown in a configured circular duct is presented. The unsteady, compressible, full Navier-Stokes (NS) equations are used. The NS equations are solved for the quasi-axisymmetric flows using an implicit, upwind, flux difference splitting, finite volume scheme. The quasi-axisymmetric solutions are time accurate and are obtained by forcing the components of the flowfield vector to be equal on two axial planes, which are in close proximity of each other. The effect of Reynolds number, for laminar flows, on the evolution and persistence of vortex breakdown, is studied. Finally, the effect of swirl ration at the duct inlet is investigated.

  20. Breakdown Studies for the CLIC Accelerating

    CERN Document Server

    Calatroni, S; Kovermann, J; Taborelli, M; Timko, H; Wuensch, W; Durabekova, F; Nordlund, K; Pohjonen, A; Kuronen, A

    2010-01-01

    Optimizing the design and the manufacturing of the CLIC RF accelerating structures for achieving the target value of breakdown rate at the nominal accelerating gradient of 100 MV/m requires a detailed understanding of all the steps involved in the mechanism of breakdown. These include surface modification under RF fields, electron emission and neutral evaporation in the vacuum, arc ignition and consequent surface modification due to plasma bombardment. Together with RF tests, experiments are conducted in a simple DC test set-up instrumented with electrical diagnostics and optical spectroscopy. The results are also used for validating simulations which are performed using a wide range of numerical tools (MD coupled to electrostatic codes, PIC plasma simulations) able to include all the above phenomena. Some recent results are presented in this paper

  1. Bioavailability of glucosinolates and their breakdown products

    DEFF Research Database (Denmark)

    Barba Orellana, Francisco Jose; Nikmaram, Nooshin; Roohinejad, Shahin

    2016-01-01

    Glucosinolates are a large group of plant secondary metabolites with nutritional effects, and are mainly found in cruciferous plants. After ingestion, glucosinolates could be partially absorbed in their intact form through the gastrointestinal mucosa. However, the largest fraction is metabolized ...... the bioavailability of glucosinolates and their breakdown products. This review paper summarizes the assimilation, absorption, and elimination of these molecules, as well as the impact of processing on their bioavailability....

  2. Topology hidden behind the breakdown of adiabaticity

    International Nuclear Information System (INIS)

    Fu, L.-B.; Chen, S.-G.

    2005-01-01

    For classical Hamiltonian systems, the adiabatic condition may fail at some critical points. However, the breakdown of the adiabatic condition does not always cause the adiabatic evolution to be destroyed. In this paper, we suggest a supplemental condition of the adiabatic evolution for the fixed points of classical Hamiltonian systems when the adiabatic condition breaks down at the critical points. As an example, we investigate the adiabatic evolution of the fixed points of a classical Hamiltonian system which has a number of applications

  3. Three-dimensional simulation of vortex breakdown

    Science.gov (United States)

    Kuruvila, G.; Salas, M. D.

    1990-01-01

    The integral form of the complete, unsteady, compressible, three-dimensional Navier-Stokes equations in the conservation form, cast in generalized coordinate system, are solved, numerically, to simulate the vortex breakdown phenomenon. The inviscid fluxes are discretized using Roe's upwind-biased flux-difference splitting scheme and the viscous fluxes are discretized using central differencing. Time integration is performed using a backward Euler ADI (alternating direction implicit) scheme. A full approximation multigrid is used to accelerate the convergence to steady state.

  4. Electrical Breakdown Phenomena Involving Material Interfaces

    Science.gov (United States)

    2013-06-01

    create ozone through chemical reactions involving reactive species created by the electrical discharge [3]. The glow discharge breakdown in such...2. REPORT TYPE N/A 3. DATES COVERED - 4. TITLE AND SUBTITLE Investigation Of Pre-Ionization And Atmospheric Pulsed Discharge Plasma 5a...growth of the air discharge in the form of a conductive filament consisting of electrons and ions. This filament is created by temporal pulse that

  5. Breakdown localization in the fixed gap system

    CERN Document Server

    Rajamaki, Robin; Wuensch, Walter

    2014-01-01

    Accurate localization of breakdowns in vacuum could help shed light on breakdown related processes that are not yet fully understood. At the DC spark lab at CERN, an instrument called the Fixed Gap System (FGS) has been developed partially for this purpose. Among other things, the FGS has four built-in antennas, which are intended for breakdown localization. The capability of this aspect of the FGS was explored in this report. Specifically, the feasibility of using a method similar to that which is used in cavity Beam Position Monitors (BPMs) was investigated. The usable frequency range of the current experimental setup was also studied. Firstly, a modal analysis of the inner geometry of the FGS was done in HFSS. This showed that the two first modes to be expected in the spark gap quite differ from those of the ideal pillbox – both in field pattern and in frequency ( 4 and 6 GHz vs. 0.2 and 3 GHz). Secondly, S-parameters of the system were measured. These showed that the coupling between antennas is weak...

  6. Kinetic Simulations of Dense Plasma Focus Breakdown

    Science.gov (United States)

    Schmidt, A.; Higginson, D. P.; Jiang, S.; Link, A.; Povilus, A.; Sears, J.; Bennett, N.; Rose, D. V.; Welch, D. R.

    2015-11-01

    A dense plasma focus (DPF) device is a type of plasma gun that drives current through a set of coaxial electrodes to assemble gas inside the device and then implode that gas on axis to form a Z-pinch. This implosion drives hydrodynamic and kinetic instabilities that generate strong electric fields, which produces a short intense pulse of x-rays, high-energy (>100 keV) electrons and ions, and (in deuterium gas) neutrons. A strong factor in pinch performance is the initial breakdown and ionization of the gas along the insulator surface separating the two electrodes. The smoothness and isotropy of this ionized sheath are imprinted on the current sheath that travels along the electrodes, thus making it an important portion of the DPF to both understand and optimize. Here we use kinetic simulations in the Particle-in-cell code LSP to model the breakdown. Simulations are initiated with neutral gas and the breakdown modeled self-consistently as driven by a charged capacitor system. We also investigate novel geometries for the insulator and electrodes to attempt to control the electric field profile. The initial ionization fraction of gas is explored computationally to gauge possible advantages of pre-ionization which could be created experimentally via lasers or a glow-discharge. Prepared by LLNL under Contract DE-AC52-07NA27344.

  7. Runaway breakdown and electrical discharges in thunderstorms

    Science.gov (United States)

    Milikh, Gennady; Roussel-Dupré, Robert

    2010-12-01

    This review considers the precise role played by runaway breakdown (RB) in the initiation and development of lightning discharges. RB remains a fundamental research topic under intense investigation. The question of how lightning is initiated and subsequently evolves in the thunderstorm environment rests in part on a fundamental understanding of RB and cosmic rays and the potential coupling to thermal runaway (as a seed to RB) and conventional breakdown (as a source of thermal runaways). In this paper, we describe the basic mechanism of RB and the conditions required to initiate an observable avalanche. Feedback processes that fundamentally enhance RB are discussed, as are both conventional breakdown and thermal runaway. Observations that provide clear evidence for the presence of energetic particles in thunderstorms/lightning include γ-ray and X-ray flux intensifications over thunderstorms, γ-ray and X-ray bursts in conjunction with stepped leaders, terrestrial γ-ray flashes, and neutron production by lightning. Intense radio impulses termed narrow bipolar pulses (or NBPs) provide indirect evidence for RB particularly when measured in association with cosmic ray showers. Our present understanding of these phenomena and their enduring enigmatic character are touched upon briefly.

  8. Improvement in the Design of Metal-Ceramic High Voltage Feedthroughs for use in High Energy Particle Accelerators

    CERN Document Server

    Weterings, W

    1999-01-01

    Large high-voltage devices operate in particle accelerators to steer charged particles in the desired direction. Solid and hollow rods of sintered alumina are used as insulating supports and high-voltage feedthroughs to power the electrodes of these electrostatic systems. The performance of the systems is often limited by voltage breakdown along the surface of the ceramic insulator (so-called surface flashover) or discharge between feedthrough and vacuum tank, which can lead to significant disruptions in terms of overall machine efficiency. Available results on the influence of the mechanical preparation, thermal history and particular cleaning techniques on commercially obtainable alumina samples have been studied in order to investigate possibilities for better preparation methodology of the insulating supports. Also the influence of the relative position of the feedthrough inside the vacuum tank on the high-voltage breakdown behaviour has been studied. This paper describes the theoretical and practical bac...

  9. Digital voltage discriminator

    International Nuclear Information System (INIS)

    Zhou Zhicheng

    1992-01-01

    A digital voltage discriminator is described, which is synthesized by digital comparator and ADC. The threshold is program controllable with high stability. Digital region of confusion is approximately equal to 1.5 LSB. This discriminator has a single channel analyzer function model with channel width of 1.5 LSB

  10. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  11. Geomagnetism and Induced Voltage

    Science.gov (United States)

    Abdul-Razzaq, W.; Biller, R. D.

    2010-01-01

    Introductory physics laboratories have seen an influx of "conceptual integrated science" over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it…

  12. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system...... to unbalanced faults. The compensation of unbalanced voltage sags and voltage unbalance in the CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0........ The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbalances, for the tested cases in the CIGRE LV test network are mainly due to single phase loads and due...

  13. Shock/vortex interaction and vortex-breakdown modes

    Science.gov (United States)

    Kandil, Osama A.; Kandil, H. A.; Liu, C. H.

    1992-01-01

    Computational simulation and study of shock/vortex interaction and vortex-breakdown modes are considered for bound (internal) and unbound (external) flow domains. The problem is formulated using the unsteady, compressible, full Navier-Stokes (NS) equations which are solved using an implicit, flux-difference splitting, finite-volume scheme. For the bound flow domain, a supersonic swirling flow is considered in a configured circular duct and the problem is solved for quasi-axisymmetric and three-dimensional flows. For the unbound domain, a supersonic swirling flow issued from a nozzle into a uniform supersonic flow of lower Mach number is considered for quasi-axisymmetric and three-dimensional flows. The results show several modes of breakdown; e.g., no-breakdown, transient single-bubble breakdown, transient multi-bubble breakdown, periodic multi-bubble multi-frequency breakdown and helical breakdown.

  14. Comparative Studies of High-Gradient Rf and Dc Breakdowns

    CERN Document Server

    Kovermann, Jan Wilhelm; Wuensch, Walter

    2010-01-01

    The CLIC project is based on normal-conducting high-gradient accelerating structures with an average accelerating gradient of 100 MV/m. The maximum achievable gradient in these structures is limited by the breakdown phenomenon. The physics of breakdowns is not yet fully understood quantitatively. A full knowledge could have strong impact on the design, material choice and construction of rf structures. Therefore, understanding breakdowns has great importance to reaching a gradient of 100MV/m with an acceptable breakdown probability. This thesis addresses the physics underlying the breakdown effect, focusing on a comparison of breakdowns in rf structures and in a dc spark setup. The dc system is simpler, easier to benchmark against simulations, with a faster turnaround time, but the relationship to rf breakdown must be established. To do so, an experimental approach based on optical diagnostics and electrical measurements methods was made. Following an introduction into the CLIC project, a general theoretical ...

  15. Charge carrier transport in Cu(In,Ga)Se2 thin-film solar-cells studied by electron beam induced current and temperature and illumination dependent current voltage analysis

    International Nuclear Information System (INIS)

    Nichterwitz, Melanie

    2012-01-01

    This work contributes to the understanding of generation dependent charge-carrier transport properties in Cu(In,Ga)Se 2 (CIGSe)/ CdS/ ZnO solar cells and a consistent model for the electronic band diagram of the heterojunction region of the device is developed. Cross section electron-beam induced current (EBIC) and temperature and illumination dependent current voltage (IV) measurements are performed on CIGSe solar cells with varying absorber layer compositions and CdS thickness. For a better understanding of possibilities and limitations of EBIC measurements applied on CIGSe solar cells, detailed numerical simulations of cross section EBIC profiles for varying electron beam and solar cell parameters are performed and compared to profiles obtained from an analytical description. Especially the effects of high injection conditions are considered. Even though the collection function of the solar cell is not independent of the generation function of the electron beam, the local electron diffusion length in CIGSe can still be extracted. Grain specific values ranging from (480±70) nm to (2.3±0.2) μm are determined for a CuInSe 2 absorber layer and a value of (2.8±0.3) μm for CIGSe with a Ga-content of 0.3. There are several models discussed in literature to explain generation dependent charge carrier transport, all assuming a high acceptor density either located in the CIGSe layer close to the CIGSe/CdS interface (p + layer), within the CdS layer or at the CdS/ZnO interface. In all models, a change in charge carrier collection properties is caused by a generation dependent occupation probability of the acceptor type defect state and the resulting potential distribution throughout the device. Numerical simulations of EBIC and IV data are performed with parameters according to these models. The model that explains the experimental data best is that of a p + layer at the CIGSe/CdS interface and acceptor type defect states at the CdS/ZnO interface. The p + layer leads

  16. Experimental and analytical study of the DC breakdown characteristics of polypropylene laminated paper with a butt gap condition considering the insulation design of superconducting cable

    Science.gov (United States)

    Seo, In-jin; Choi, Won; Seong, Jae-gyu; Lee, Bang-wook; Koo, Ja-yoon

    2014-08-01

    It has been reported that the insulation design under DC stress is considered as one of the critical factors in determining the performance of high-voltage direct current (HVDC) superconducting cable. Therefore, it is fundamentally necessary to investigate the DC breakdown characteristics of the composite insulation system consisting of liquid nitrogen (LN2)/polypropylene-laminated-paper (PPLP). In particular, the insulation characteristics under DC polarity reversal condition should be verified to understand the polarity effect of the DC voltage considering the unexpected incidents taking place at line-commutated-converters (LCC) under service at a DC power grid. In this study, to examine the variation of DC electric field strength, the step voltage and polarity reversal breakdown tests are performed under DC stress. Also, we investigate the electric field distributions in a butt gap of the LN2/PPLP condition considering the DC polarity reversal by using simulation software.

  17. Ion-induced secondary electron emission, optical and hydration resistant behavior of MgO, Mg–Mo–O and Mg–Ce–O thin films

    International Nuclear Information System (INIS)

    Kumar, Ashok; Thota, Subhash; Deva, Dinesh; Kumar, Jitendra

    2014-01-01

    Optical transmittance, hydration resistance and secondary electron emission characteristics of e-beam evaporated pure and Mo- or Ce-containing MgO thin films have been investigated. While the increased grain size and pyramidal columnar morphology following incorporation of molybdenum and cerium in MgO are responsible for the excellent discharge characteristics, emergence of neutral {100} and {110} MgO surfaces preferentially give rise to high optical transmittance (∼ 92–100%) and stability against hydration. Further, addition of Mo (or Ce) in MgO causes significant increase in defect density which, in turn, enhances the photoluminescence (PL) emission from 5-, 4- and 3-coordination sites. The changes lead to lowering of the breakdown voltage and hence improvement in the secondary electron emission (SEE) efficiency. These facts have been supported by ion-induced SEE yield (γ) deduced from the a.c. breakdown voltage observed, taking neon as a discharge gas, and determined semi-empirically as well with Hagstrum's theory based on Auger neutralization process using (i) band offset parameters and surface band gap data derived from X-ray photoelectron spectroscopy signal and (ii) information of defect energy levels obtained from photoluminescence (PL) measurements. The experimental values of neon ion-induced SEE yield (γ) are found to be 0.35, 0.42 and 0.39 for MgO, Mg–Mo–O (x = 0.035) and Mg–Ce–O (x = 0.01) thin films, respectively. - Highlights: • Higher hydration resistance • Increased photoluminescence emission • Higher secondary electron emission

  18. Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage p....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0.......Any problem in voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM), Dynamic Voltage Restorer (DVR) etc. are commonly used for the mitigation of voltage...... problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults...

  19. RF BREAKDOWN STUDIES USING PRESSURIZED CAVITIES

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Rolland

    2014-09-21

    Many present and future particle accelerators are limited by the maximum electric gradient and peak surface fields that can be realized in RF cavities. Despite considerable effort, a comprehensive theory of RF breakdown has not been achieved and mitigation techniques to improve practical maximum accelerating gradients have had only limited success. Part of the problem is that RF breakdown in an evacuated cavity involves a complex mixture of effects, which include the geometry, metallurgy, and surface preparation of the accelerating structures and the make-up and pressure of the residual gas in which plasmas form. Studies showed that high gradients can be achieved quickly in 805 MHz RF cavities pressurized with dense hydrogen gas, as needed for muon cooling channels, without the need for long conditioning times, even in the presence of strong external magnetic fields. This positive result was expected because the dense gas can practically eliminate dark currents and multipacting. In this project we used this high pressure technique to suppress effects of residual vacuum and geometry that are found in evacuated cavities in order to isolate and study the role of the metallic surfaces in RF cavity breakdown as a function of magnetic field, frequency, and surface preparation. One of the interesting and useful outcomes of this project was the unanticipated collaborations with LANL and Fermilab that led to new insights as to the operation of evacuated normal-conducting RF cavities in high external magnetic fields. Other accomplishments included: (1) RF breakdown experiments to test the effects of SF6 dopant in H2 and He gases with Sn, Al, and Cu electrodes were carried out in an 805 MHz cavity and compared to calculations and computer simulations. The heavy corrosion caused by the SF6 components led to the suggestion that a small admixture of oxygen, instead of SF6, to the hydrogen would allow the same advantages without the corrosion in a practical muon beam line. (2) A

  20. Investigation of multipactor breakdown in communication satellite microwave co-axial systems

    Science.gov (United States)

    Nagesh, S. K.; Revannasiddiah, D.; Shastry, S. V. K.

    2005-01-01

    Multipactor breakdown or multipactor discharge is a form of high frequency discharge that may occur in microwave components operating at very low pressures. Some RF components of multi-channel communication satellites have co-axial geometry and handle high RF power under near-vacuum conditions. The breakdown occurs due to secondary electron resonance, wherein electrons move back and forth in synchronism with the RF voltage across the gap between the inner and outer conductors of the co-axial structure. If the yield of secondary electrons from the walls of the co-axial structure is greater than unity, then the electron density increases with time and eventually leads to the breakdown. In this paper, the current due to the oscillating electrons in the co-axial geometry has been treated as a radially oriented Hertzian dipole. The electric field, due to this dipole, at any point in the coaxial structure, may then be determined by employing the dyadic Green's function technique. This field has been compared with the field that would exist in the absence of multipactor.

  1. An Ensemble Learning for Predicting Breakdown Field Strength of Polyimide Nanocomposite Films

    Directory of Open Access Journals (Sweden)

    Hai Guo

    2015-01-01

    Full Text Available Using the method of Stochastic Gradient Boosting, ten SMO-SVR are constructed into a strong prediction model (SGBS model that is efficient in predicting the breakdown field strength. Adopting the method of in situ polymerization, thirty-two samples of nanocomposite films with different percentage compositions, components, and thicknesses are prepared. Then, the breakdown field strength is tested by using voltage test equipment. From the test results, the correlation coefficient (CC, the mean absolute error (MAE, the root mean squared error (RMSE, the relative absolute error (RAE, and the root relative squared error (RRSE are 0.9664, 14.2598, 19.684, 22.26%, and 25.01% with SGBS model. The result indicates that the predicted values fit well with the measured ones. Comparisons between models such as linear regression, BP, GRNN, SVR, and SMO-SVR have also been made under the same conditions. They show that CC of the SGBS model is higher than those of other models. Nevertheless, the MAE, RMSE, RAE, and RRSE of the SGBS model are lower than those of other models. This demonstrates that the SGBS model is better than other models in predicting the breakdown field strength of polyimide nanocomposite films.

  2. Barrier breakdown mechanism in nano-scale perpendicular magnetic tunnel junctions with ultrathin MgO barrier

    Science.gov (United States)

    Lv, Hua; Leitao, Diana C.; Hou, Zhiwei; Freitas, Paulo P.; Cardoso, Susana; Kämpfe, Thomas; Müller, Johannes; Langer, Juergen; Wrona, Jerzy

    2018-05-01

    Recently, the perpendicular magnetic tunnel junctions (p-MTJs) arouse great interest because of its unique features in the application of spin-transfer-torque magnetoresistive random access memory (STT-MRAM), such as low switching current density, good thermal stability and high access speed. In this paper, we investigated current induced switching (CIS) in ultrathin MgO barrier p-MTJs with dimension down to 50 nm. We obtained a CIS perpendicular tunnel magnetoresistance (p-TMR) of 123.9% and 7.0 Ω.μm2 resistance area product (RA) with a critical switching density of 1.4×1010 A/m2 in a 300 nm diameter junction. We observe that the extrinsic breakdown mechanism dominates, since the resistance of our p-MTJs decreases gradually with the increasing current. From the statistical analysis of differently sized p-MTJs, we observe that the breakdown voltage (Vb) of 1.4 V is 2 times the switching voltage (Vs) of 0.7 V and the breakdown process exhibits two different breakdown states, unsteady and steady state. Using Simmons' model, we find that the steady state is related with the barrier height of the MgO layer. Furthermore, our study suggests a more efficient method to evaluate the MTJ stability under high bias rather than measuring Vb. In conclusion, we developed well performant p-MTJs for the use in STT-MRAM and demonstrate the mechanism and control of breakdown in nano-scale ultrathin MgO barrier p-MTJs.

  3. Cellulose triacetate, thin film dielectric capacitor

    Science.gov (United States)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1995-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  4. High power thyristors with 5 kV blocking voltage. Volume 1: Development of high-voltage-thyristors (4.5 kV) with good dynamic properties

    Science.gov (United States)

    Lock, K.; Patalong, H.; Platzoeder, K.

    1979-01-01

    Using neutron irradiated silicon with considerably lower spread in resistivity as compared to conventionally doped silicon it was possible to produce power thyristors with breakdown voltages between 3.5 kV and 5.5 kV. The thyristor pellets have a diameter of 50 mm. Maximum average on-state currents of 600 to 800 A can be reached with these elements. The dynamic properties of the thryistors could be improved to allow standard applications up to maximum repetitive voltages of 4.5 kV.

  5. Calculations for high voltage insulators and conductors with computer aided design and transient voltage simulations engineering for a large electrostatic accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Osswald, F.; Roumie, M.; Frick, G.; Heusch, B.

    1994-11-01

    Calculations have been made to increase the high voltage performance of some components and to explain electrical failures of the Vivitron. These involve simulations of static stresses and transient over voltages, especially on insulating boards and electrodes occurring before or during breakdowns. Developments made to the structure of the machine over the last years and new ideas to improve the static and dynamic behaviour are presented. The application of this study and HV tests led recently to a nominal potential near 20 MV without sparks. (author). 49 refs., 25 figs., 2 tabs.

  6. Calculations for high voltage insulators and conductors with computer aided design and transient voltage simulations engineering for a large electrostatic accelerator

    International Nuclear Information System (INIS)

    Osswald, F.; Roumie, M.; Frick, G.; Heusch, B.

    1994-11-01

    Calculations have been made to increase the high voltage performance of some components and to explain electrical failures of the Vivitron. These involve simulations of static stresses and transient over voltages, especially on insulating boards and electrodes occurring before or during breakdowns. Developments made to the structure of the machine over the last years and new ideas to improve the static and dynamic behaviour are presented. The application of this study and HV tests led recently to a nominal potential near 20 MV without sparks. (author). 49 refs., 25 figs., 2 tabs

  7. Pre-breakdown processes in a dielectric fluid in inhomogeneous pulsed electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Shneider, Mikhail N., E-mail: m.n.shneider@gmail.com [Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544 (United States); Pekker, Mikhail [MMSolution, 6808 Walker Street, Philadelphia, Pennsylvania 19135 (United States)

    2015-06-14

    We consider the development of pre-breakdown cavitation nanopores appearing in the dielectric fluid under the influence of the electrostrictive stresses in the inhomogeneous pulsed electric field. It is shown that three characteristic regions can be distinguished near the needle electrode. In the first region, where the electric field gradient is greatest, the cavitation nanopores, occurring during the voltage nanosecond pulse, may grow to the size at which an electron accelerated by the field inside the pores can acquire enough energy for excitation and ionization of the liquid on the opposite pore wall, i.e., the breakdown conditions are satisfied. In the second region, the negative pressure caused by the electrostriction is large enough for the cavitation initiation (which can be registered by optical methods), but, during the voltage pulse, the pores do not reach the size at which the potential difference across their borders becomes sufficient for ionization or excitation of water molecules. And, in the third, the development of cavitation is impossible, due to an insufficient level of the negative pressure: in this area, the spontaneously occurring micropores do not grow and collapse under the influence of surface tension forces. This paper discusses the expansion dynamics of the cavitation pores and their most probable shape.

  8. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.; Abdelghany, Mohamed A.; Elsayed, Mohannad Yomn; Elshurafa, Amro M; Salama, Khaled N.

    2014-01-01

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  9. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  10. Disintegration of rocks based on magnetically isolated high voltage discharge

    Science.gov (United States)

    He, Mengbing; Jiang, Jinbo; Huang, Guoliang; Liu, Jun; Li, Chengzu

    2013-02-01

    Recently, a method utilizing pulsed power technology for disintegration of rocks arouses great interest of many researchers. In this paper, an improved method based on magnetic switch and the results shown that the uniform dielectrics like plastic can be broken down in water is presented, and the feasible mechanism explaining the breakdown of solid is proposed and proved experimentally. A high voltage pulse of 120 kV, rise time 0.2 μs was used to ignite the discharging channel in solids. When the plasma channel is formed in the solid, the resistance of the channel is quiet small; even if a relatively low voltage is applied on the channel on this occasion, it will produce high current to heat the plasma channel rapidly, and eventually disintegrate the solids. The feasibility of promising industrial application in the drilling and demolition of natural and artificial solid materials by the method we presented is verified by the experiment result in the paper.

  11. A high-voltage test for the ATLAS RPC qualification

    CERN Document Server

    Aielli, G; Cardarelli, R; Di Ciaccio, A; Di Simone, A; Liberti, B; Santonico, R

    2004-01-01

    The RPC production sequence for the ATLAS experiment includes a specific test of current absorption at the operating point, which concerns the RPC "gas volumes", namely the bare detectors not yet assembled with the read-out panels and the mechanical support structures. The test, which is carried out at the production site, consists of two phases. The gas volumes are initially conditioned with pure argon, keeping the voltage constant just above the breakdown value of about 2 kV. The final test, performed after the volumes have undergone inner surface varnishing with linseed oil, is based on the measurement of the current-voltage characteristics with the binary operating gas, C//2H//2F//4/i-C//4H//1//0 = 95/5. The results presented here concern 45% of the total foreseen production.

  12. A high-voltage test for the ATLAS RPC qualification

    International Nuclear Information System (INIS)

    Aielli, G.; Camarri, P.; Cardarelli, R.; Di Ciaccio, A.; Di Simone, A.; Liberti, B.; Santonico, R.

    2004-01-01

    The RPC production sequence for the ATLAS experiment includes a specific test of current absorption at the operating point, which concerns the RPC 'gas volumes', namely the bare detectors not yet assembled with the read-out panels and the mechanical support structures. The test, which is carried out at the production site, consists of two phases. The gas volumes are initially conditioned with pure argon, keeping the voltage constant just above the breakdown value of about 2 kV. The final test, performed after the volumes have undergone inner surface varnishing with linseed oil, is based on the measurement of the current-voltage characteristics with the binary operating gas, C2H2F4/i-C4H10=95/5. The results presented here concern 45% of the total foreseen production

  13. High voltage wide range marx generator design and construction

    International Nuclear Information System (INIS)

    Thompson, J.E.

    1976-01-01

    A wide range, long pulse, Marx generator has been designed and constructed for the purpose of exciting a thermionic electron gun utilized for quasi-cw gas laser medium ionization. The Marx generator has been specifically designed to operate over a voltage range variable from 100 kV to 200 kV into a resistive load of between 83 kΩ and open circuit. This wide operating range, both in voltage and load impedance, was obtained using interstage coupling capacitors to assure overvoltage and subsequent breakdown of the three element spark gap switches used. This paper will discuss the motivation and specific application for the Marx generator and will present the relevant design procedure with particular emphasis on the interstage coupling and triggering techniques employed. Experimental data regarding the measured Marx generator performance will also be presented

  14. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  15. Increased voltage photovoltaic cell

    Science.gov (United States)

    Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

    1985-01-01

    A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

  16. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Hao [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States)]. E-mail: hao.jiang@wpafb.af.mil; Hong Lianggou [Materials Sci and Tech Applications, LLC, 409 Maple Springs Drive, Dayton OH 45458 (United States); Venkatasubramanian, N. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Grant, John T. [Research Institute, University of Dayton, 300 College Park, Dayton, OH 45469-0168 (United States); Eyink, Kurt [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Wiacek, Kevin [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Fries-Carr, Sandra [Air Force Research Laboratory, Propulsion Directorate, 1950 Fifth Street, Wright-Patterson Air Force Base, OH 45433-7251 (United States); Enlow, Jesse [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States); Bunning, Timothy J. [Air Force Research Laboratory, Materials Directorate, 3005 Hobson Way, Wright-Patterson Air Force Base, OH 45433-7707 (United States)

    2007-02-26

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant ({epsilon} {sub r}) and dielectric loss (tan {delta}) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F {sub b}) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F{sub b} of 610 V/{mu}m, an {epsilon} {sub r} of 3.07, and a tan {delta} of 7.0 x 10{sup -3} at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss.

  17. The relationship between chemical structure and dielectric properties of plasma-enhanced chemical vapor deposited polymer thin films

    International Nuclear Information System (INIS)

    Jiang Hao; Hong Lianggou; Venkatasubramanian, N.; Grant, John T.; Eyink, Kurt; Wiacek, Kevin; Fries-Carr, Sandra; Enlow, Jesse; Bunning, Timothy J.

    2007-01-01

    Polymer dielectric films fabricated by plasma enhanced chemical vapor deposition (PECVD) have unique properties due to their dense crosslinked bulk structure. These spatially uniform films exhibit good adhesion to a variety of substrates, excellent chemical inertness, high thermal resistance, and are formed from an inexpensive, solvent-free, room temperature process. In this work, we studied the dielectric properties of plasma polymerized (PP) carbon-based polymer thin films prepared from two precursors, benzene and octafluorocyclobutane. Two different monomer feed locations, directly in the plasma zone or in the downstream region (DS) and two different pressures, 80 Pa (high pressure) or 6.7 Pa (low pressure), were used. The chemical structure of the PECVD films was examined by X-ray photoelectron spectroscopy and Fourier-transform infrared spectroscopy. The dielectric constant (ε r ) and dielectric loss (tan δ) of the films were investigated over a range of frequencies up to 1 MHz and the dielectric strength (breakdown voltage) (F b ) was characterized by the current-voltage method. Spectroscopic ellipsometry was performed to determine the film thickness and refractive index. Good dielectric properties were exhibited, as PP-benzene films formed in the high pressure, DS region showed a F b of 610 V/μm, an ε r of 3.07, and a tan δ of 7.0 x 10 -3 at 1 kHz. The PECVD processing pressure has a significant effect on final film structure and the film's physical density has a strong impact on dielectric breakdown strength. Also noted was that the residual oxygen content in the PP-benzene films significantly affected the frequency dependences of the dielectric constant and loss

  18. Need for spontaneous breakdown of chiral symmetry

    International Nuclear Information System (INIS)

    Salomone, A.; Schechter, J.; Tudron, T.

    1981-01-01

    The question of whether the chiral symmetry of the theory of strong interactions (with massless quarks) is required to be spontaneously broken is examined in the framework of a previously discussed effective Lagrangian for quantum chromodynamics. The assumption that physical masses of the theory be finite leads in a very direct way to the necessity of spontaneous breakdown. This result holds for all N/sub F/> or =2, where N/sub F/ is the number of different flavors of light quarks. The atypical cases N/sub F/ = 1,2 are discussed separately

  19. On spontaneous breakdown in Σ-models

    International Nuclear Information System (INIS)

    Ivanov, E.A.

    1975-01-01

    The group theory aspects of spontaneous breakdown in linear Σ-models are discussed. General conditions are formulated under which multiplet of group G (compact or noncompact) is suitable for constructing the Σ-model with a given subgroup of stability of vacuum. It is shown that the Σ-models of spontaneously broken space-time symmetries can be constructed in general only if some extra coordinates are introduced in addition to an ordinary 4-coordinate xsub(μ). The connection between Σ-models of internal symmetries and appropriate nonlinear realizations has also been investigated

  20. Ergodicity breakdown and scaling from single sequences

    Energy Technology Data Exchange (ETDEWEB)

    Kalashyan, Armen K. [Center for Nonlinear Science, University of North Texas, P.O. Box 311427, Denton, TX 76203-1427 (United States); Buiatti, Marco [Laboratoire de Neurophysique et Physiologie, CNRS UMR 8119 Universite Rene Descartes - Paris 5 45, rue des Saints Peres, 75270 Paris Cedex 06 (France); Cognitive Neuroimaging Unit - INSERM U562, Service Hospitalier Frederic Joliot, CEA/DRM/DSV, 4 Place du general Leclerc, 91401 Orsay Cedex (France); Grigolini, Paolo [Center for Nonlinear Science, University of North Texas, P.O. Box 311427, Denton, TX 76203-1427 (United States); Dipartimento di Fisica ' E.Fermi' - Universita di Pisa and INFM, Largo Pontecorvo 3, 56127 Pisa (Italy); Istituto dei Processi Chimico, Fisici del CNR Area della Ricerca di Pisa, Via G. Moruzzi 1, 56124 Pisa (Italy)], E-mail: grigo@df.unipi.it

    2009-01-30

    In the ergodic regime, several methods efficiently estimate the temporal scaling of time series characterized by long-range power-law correlations by converting them into diffusion processes. However, in the condition of ergodicity breakdown, the same methods give ambiguous results. We show that in such regime, two different scaling behaviors emerge depending on the age of the windows used for the estimation. We explain the ambiguity of the estimation methods by the different influence of the two scaling behaviors on each method. Our results suggest that aging drastically alters the scaling properties of non-ergodic processes.

  1. Ergodicity breakdown and scaling from single sequences

    International Nuclear Information System (INIS)

    Kalashyan, Armen K.; Buiatti, Marco; Grigolini, Paolo

    2009-01-01

    In the ergodic regime, several methods efficiently estimate the temporal scaling of time series characterized by long-range power-law correlations by converting them into diffusion processes. However, in the condition of ergodicity breakdown, the same methods give ambiguous results. We show that in such regime, two different scaling behaviors emerge depending on the age of the windows used for the estimation. We explain the ambiguity of the estimation methods by the different influence of the two scaling behaviors on each method. Our results suggest that aging drastically alters the scaling properties of non-ergodic processes.

  2. Suppressing voltage transients in high voltage power supplies

    International Nuclear Information System (INIS)

    Lickel, K.F.; Stonebank, R.

    1979-01-01

    A high voltage power supply for an X-ray tubes includes voltage adjusting means, a high voltage transformer, switch means connected to make and interrupt the primary current of the transformer, and over-voltage suppression means to suppress the voltage transient produced when the current is switched on. In order to reduce the power losses in the suppression means, an impedance is connected in the transformer primary circuit on operation of the switch means and is subsequently short-circuited by a switch controlled by a timer after a period which is automatically adjusted to the duration of the transient overvoltage. (U.K.)

  3. Benchmarking of Voltage Sag Generators

    DEFF Research Database (Denmark)

    Yang, Yongheng; Blaabjerg, Frede; Zou, Zhixiang

    2012-01-01

    The increased penetration of renewable energy systems, like photovoltaic and wind power systems, rises the concern about the power quality and stability of the utility grid. Some regulations for Low Voltage Ride-Through (LVRT) for medium voltage or high voltage applications, are coming into force...

  4. Charge-pump voltage converter

    Science.gov (United States)

    Brainard, John P [Albuquerque, NM; Christenson, Todd R [Albuquerque, NM

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  5. CO2 gas sensitivity of sputtered zinc oxide thin films

    Indian Academy of Sciences (India)

    TECS

    Gas sensitivity; ZnO; sputtering; XRD patterns; structure; thin films. 1. Introduction. Because zinc ... voltage and absorption properties of those fabricated films have been ... tations are useful in many physical applications. The in- plane (Hegde ...

  6. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  7. New perspectives in vacuum high voltage insulation. I. The transition to field emission

    CERN Document Server

    Diamond, W T

    1998-01-01

    Vacuum high-voltage insulation has been investigated for many years. Typically, electrical breakdown occurs between two broad-area electrodes at electric fields 100-1000 times lower than the breakdown field (about 5000 MV/m) between a well-prepared point cathode and a broad-area anode. Explanations of the large differences remain unsatisfactory, usually evoking field emission from small projections on the cathode that are subject to higher peak fields. The field emission then produces secondary effects that lead to breakdown. This article provides a significant resolution to this long standing problem. Field emission is not present at all fields, but typically starts after some process occurs at the cathode surface. Three effects have been identified that produce the transition to field emission: work function changes; mechanical changes produced by the strong electrical forces on the electrode surfaces; and gas desorption from the anode with sufficient density to support an avalanche discharge. Material adso...

  8. Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

    DEFF Research Database (Denmark)

    Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

    2017-01-01

    This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... optimization. The proposed method is used to calculate the voltage bands and droop settings of PV inverters at each node by the supervisory controller. The local controller of each PV inverter implements the volt/var control and if necessary, the active power curtailment as per the received settings and based...... on measured local voltages. The advantage of the proposed method is that the calculated reactive power and active power droop settings enable fair contribution of the PV inverters at each node to the voltage regulation. Simulation studies are conducted using DigSilent Power factory software on a simplified...

  9. Numerical simulation and physical aspects of supersonic vortex breakdown

    Science.gov (United States)

    Liu, C. H.; Kandil, O. A.; Kandil, H. A.

    1993-01-01

    Existing numerical simulations and physical aspects of subsonic and supersonic vortex-breakdown modes are reviewed. The solution to the problem of supersonic vortex breakdown is emphasized in this paper and carried out with the full Navier-Stokes equations for compressible flows. Numerical simulations of vortex-breakdown modes are presented in bounded and unbounded domains. The effects of different types of downstream-exit boundary conditions are studied and discussed.

  10. Pressurized-helium breakdown at very low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Metas, R J

    1972-06-01

    An investigation of the electrical-breakdown behavior of helium at very low temperatures has been carried out to assist the design and development of superconducting power cables. At very high densities, both liquid and gaseous helium showed an enhancement in electric strength when pressurized to a few atmospheres; conditioned values of breakdown fields then varied between 30 and 45 MV/m. Breakdown processes occurring over a wide range of helium densities are discussed. 24 references.

  11. Measurement of skeletal muscle collagen breakdown by microdialysis

    DEFF Research Database (Denmark)

    Miller, B F; Ellis, D; Robinson, M M

    2011-01-01

    Exercise increases the synthesis of collagen in the extracellular matrix of skeletal muscle. Breakdown of skeletal muscle collagen has not yet been determined because of technical limitations. The purpose of the present study was to use local sampling to determine skeletal muscle collagen breakdown...... collagen breakdown 17–21 h post-exercise, and our measurement of OHP using GC–MS was in agreement with traditional assays....

  12. Analysis on X-band structure breakdown at GLCTA

    International Nuclear Information System (INIS)

    Suehara, T.; Sanuki, T.; Komamiya, S.; Higo, T.; Hayano, H.; Terunuma, N.; Saeki, T.; Watanabe, K.; Hayakawa, A.; Tsukada, Y.

    2004-01-01

    We have built a new monitoring system for accelerator structure breakdown in the X-band high-gradient test facility at KEK (GLCTA: Global Linear Collider Test Accelerator). An X-band test structure KX01 (made by KEK) has been processed at GLCTA and we have been collecting data for about 3 months using this breakdown monitoring system. We describe overview of the monitoring system and preliminary result of breakdown analysis of the structure. (author)

  13. Studies of RF Breakdown of Metals in Dense Gases

    CERN Document Server

    Hanlet, Pierrick M; Ankenbrandt, Charles; Johnson, Rolland P; Kaplan, Daniel; Kuchnir, Moyses; Moretti, Alfred; Paul, Kevin; Popovic, Milorad; Yarba, Victor; Yonehara, Katsuya

    2005-01-01

    A study of RF breakdown of metals in gases has begun as part of a program to develop RF cavities filled with dense hydrogen gas to be used for muon ionization cooling. A pressurized 800 MHz test cell has been used at Fermilab to compare the conditioning and breakdown behavior of copper, molybdenum, chromium, and beryllium electrodes as functions of hydrogen and helium gas density. These results are compared to the predicted or known RF breakdown behavior of these metals in vacuum.

  14. thin films

    Indian Academy of Sciences (India)

    microscopy (SEM) studies, respectively. The Fourier transform ... Thin films; chemical synthesis; hydrous tin oxide; FTIR; electrical properties. 1. Introduction ... dehydrogenation of organic compounds (Hattori et al 1987). .... SEM images of (a) bare stainless steel and (b) SnO2:H2O thin film on stainless steel substrate at a ...

  15. Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

    Science.gov (United States)

    Mao, Wei; Fan, Ju-Sheng; Du, Ming; Zhang, Jin-Feng; Zheng, Xue-Feng; Wang, Chong; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

    2016-12-01

    A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574112, 61334002, 61306017, 61474091, and 61574110) and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 605119425012).

  16. Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

    International Nuclear Information System (INIS)

    Mao Wei; Fan Ju-Sheng; Du Ming; Zhang Jin-Feng; Zheng Xue-Feng; Wang Chong; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

    2016-01-01

    A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications. (paper)

  17. Numerical simulation of a precessing vortex breakdown

    International Nuclear Information System (INIS)

    Jochmann, P.; Sinigersky, A.; Hehle, M.; Schaefer, O.; Koch, R.; Bauer, H.-J.

    2006-01-01

    The objective of this work is to present the results of time-dependent numerical predictions of a turbulent symmetry breaking vortex breakdown in a realistic gas turbine combustor. The unsteady Reynolds-averaged Navier-Stokes (URANS) equations are solved by using the k-ε two-equation model as well as by a full second-order closure using the Reynolds stress model of Speziale, Sarkar and Gatski (SSG). The results for a Reynolds number of 5.2 x 10 4 , a swirl number of 0.52 and an expansion ratio of 5 show that the flow is emerging from the swirler as a spiral gyrating around a zone of strong recirculation which is also asymmetric and precessing. These flow structures which are typical for the spiral type (S-type) vortex breakdown have been confirmed by PIV and local LDA measurements in a corresponding experimental setup. Provided that high resolution meshes are employed the calculations with both turbulence models are capable to reproduce the spatial and temporal dynamics of the flow

  18. Microemulsion systems applied to breakdown petroleum emulsions

    Energy Technology Data Exchange (ETDEWEB)

    Neuma de Castro Dantas, Tereza; Avelino Dantas Neto, Afonso; Ferreira Moura, Everlane [Deptos de Quimica e Eng. Quimica, Universidade Federal do Rio Grande do Norte, Campus Universitario s/n, 59072.970, Natal/RN Campinas (Brazil)

    2001-12-29

    Microemulsion systems obtained using commercial surfactants with demulsifier and emulsion prevention properties have been employed to break down Brazilian crude water-in-oil (W/O) emulsions. These crude oils were supplied by the Brazilian oil company-PETROBRAS-and were characterized by the different Balance sheet of Sediment and Water (BSW) values of 48%, 36%, and 32%. The microemulsion systems formed in this study were composed of an aqueous phase (HCl 5.2% solution); an oil phase (toluene); a cosurfactant/surfactant (C/S) phase (isopropyl alcohol (C)/surfactants (S) with a ratio C/S of 9.0). The microemulsion efficiency to break down oil emulsions was evaluated by a direct contact method between the microemulsions and crude (W/O) emulsions. The Scheffe net statistical planning for mixtures was used to relate the component mass fractions to the relative breakdown of petroleum emulsions. The best composition of the microemulsion system for the complete breakdown of oil emulsions with high BSW values had the lowest C/S phase percentage.

  19. Second harmonic electron cyclotron breakdown in stellarators

    International Nuclear Information System (INIS)

    Carter, M.D.; Batchelor, D.B.; England, A.C.

    1987-01-01

    In linear wave-particle interaction models, the coupling between cold electrons and microwaves with frequency equal to twice the electron gyrofrequency is so weak that the ionization of a significant number of neutral hydrogen atoms would seem impossible in practical applications. However, the non-linear interaction of a cold electron with the wave is very large if the electron becomes trapped near resonance in a shallow, static magnetic well. A model has been developed to describe the breakdown of a neutral gas when these non-linear interactions are considered, and it is in reasonable agreement with the limited amount of available experimental data. For gas pressures that are too large, electron-neutral collisions inhibit the non-linear interaction and prevent breakdown. For gas pressures that are too low, the growth rate of the free electron population is limited because electrons capable of causing ionization are lost before suffering a collision with a neutral. Quantitative growth rate predictions are presented for stellarators, and formulae for rough estimates are given. (author)

  20. Sensing voltage across lipid membranes

    Science.gov (United States)

    Swartz, Kenton J.

    2009-01-01

    The detection of electrical potentials across lipid bilayers by specialized membrane proteins is required for many fundamental cellular processes such as the generation and propagation of nerve impulses. These membrane proteins possess modular voltage-sensing domains, a notable example being the S1-S4 domains of voltage-activated ion channels. Ground-breaking structural studies on these domains explain how voltage sensors are designed and reveal important interactions with the surrounding lipid membrane. Although further structures are needed to fully understand the conformational changes that occur during voltage sensing, the available data help to frame several key concepts that are fundamental to the mechanism of voltage sensing. PMID:19092925