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Sample records for voltage breakdown thin

  1. Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates

    Institute of Scientific and Technical Information of China (English)

    Qiao Ming; Zhuang Xiang; Wu Li-Juan; Zhang Wen-Tong; Wen Heng-Juan; Zhang Bo; Li Zhao-Ji

    2012-01-01

    Based on the theoretical and experimental investigation of a thin silicon layer (TSL) with linear variable doping (LVD) and further research on the TSL LVD with a multiple step field plate (MSFP),a breakdown voltage (BV) model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator (SOI) device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field (ENDIF),from which the reduced surface field (RESURF) condition is deduced.The drain in the centre of the device has a good self-isolation effect but the problem of the high voltage interconnection (HVI) line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET (nLDMOS) with MSFP is realized.The experimental breakdown voltage (BV) and specific on-resistance (Ron,sp) of the TSL LVD SOI device are 694 V and 21.3 Ω.mm2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.

  2. High Voltage Water Breakdown Studies

    Science.gov (United States)

    1998-01-01

    E. Zein Eldine, and R. Hawley, "Influence of electrode coatings on the breakdown strength of transformer oil ," Nature, Vol. 202, pp. 687-688, 1964...longer needed . Do not return to sender. PLEASE NOTIFY THE DEFENSE SPECIAL WEAPONS AGENCY, ATTN: CSTI, 6801TELEGRAPH ROAD, ALEXANDRIA, VA 22310-3398, IF...reviewing instructions, searching existing data sources, gathering and maintaining the data needed , and completing and reviewing the collection of

  3. An investigation of breakdown voltage in AMTECs

    Science.gov (United States)

    Momozaki, Yoichi; El-Genk, Mohamed S.

    2002-01-01

    Experiments are conducted to investigate the DC electrical breakdown voltage in cesium vapor between two planner molybdenum electrodes, 1.6 cm in diameter, separated by a 0.5 mm gap, and relate the results to the potential electrical breakdown on the cathode side of Alkali Metal Thermal-to-Electric Converters (AMTECs). In the first set of experiments, in which the electrodes are kept at 560 and 650 K, while varying the cesium pressure from 0.71 to 29 Pa, when the cooler electrode is positively biased, breakdown occurs at ~500 V, but at 700 V when the cooler electrode is negatively biased. In the second set of experiments, in which the electrodes are held at 625 and 1100 K and the cesium pressure varied from 1.7 to 235 Pa, when the cooler electrode is positively biased, breakdown voltage is <4 V, but in excess of 400 V when the cooler electrode is negatively biased. Since the first ionization potential and the ionization rate constant of cesium are lower and higher, respectively, than for the sodium (5.14 V) and potassium (4.34 V) vapors in AMTECs, the DC electrical breakdown voltage in an AMTEC is expected to be higher than measured in this work for cesium vapor. .

  4. Alternating current breakdown voltage of ice electret

    Science.gov (United States)

    Oshika, Y.; Tsuchiya, Y.; Okumura, T.; Muramoto, Y.

    2017-09-01

    Ice has low environmental impact. Our research objectives are to study the availability of ice as a dielectric insulating material at cryogenic temperatures. We focus on ferroelectric ice (iceXI) at cryogenic temperatures. The properties of iceXI, including its formation, are not clear. We attempted to obtain the polarized ice that was similar to iceXI under the applied voltage and cooling to 77 K. The polarized ice have a wide range of engineering applications as electronic materials at cryogenic temperatures. This polarized ice is called ice electret. The structural difference between ice electret and normal ice is only the positions of protons. The effects of the proton arrangement on the breakdown voltage of ice electret were shown because electrical properties are influenced by the structure of ice. We observed an alternating current (ac) breakdown voltage of ice electret and normal ice at 77 K. The mean and minimum ac breakdown voltage values of ice electret were higher than those of normal ice. We considered that the electrically weak part of the normal ice was improved by applied a direct electric field.

  5. Improved Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors by Employing Polyimide/Chromium Composite Thin Films as Surface Passivation and High-Permittivity Field Plates

    Science.gov (United States)

    Chu, Fu-Tong; Chen, Chao; Zhou, Wei; Liu, Xing-Zhao

    2013-09-01

    The breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) is enhanced by employing metal chromium (Cr) nanoparticle-embedded polyimide (PI) as a high-permittivity (high-K) dielectric covering both the source-gate and gate-drain regions. The PI/Cr composite high-K dielectrics acting as a field plate prevent the occurrence of strong electric fields produced at the drain side edge of the gate electrode to obtain an optimum lateral electric flux of HEMTs. The breakdown voltage is improved by approximately 35% when using the PI/Cr thin film dielectric field plate while maintaining high performance, a high transconductance value of 122.4 mS/mm, and a large saturated drain-current value of 748 mA/mm.

  6. Breakdown voltage of metal-oxide resistors in liquid argon

    CERN Document Server

    Bagby, L F; James, C C; Jones, B J P; Jostlein, H; Lockwitz, S; Naples, D; Raaf, J L; Rameika, R; Schukraft, A; Strauss, T; Weber, M S; Wolbers, S A

    2014-01-01

    We characterized a sample of metal-oxide resistors and measured their breakdown voltage in liquid argon by applying high voltage (HV) pulses over a 3 second period to simulate the electric breakdown in a HV-divider chain. All resistors had higher breakdown voltages in liquid argon than their vendor ratings in air at room temperature. Failure modes range from full destruction to coating damage. In cases where breakdown was not catastrophic, subsequent breakdown voltages were lower in subsequent measuring runs. One resistor type withstands 131\\,kV pulses, the limit of the test setup.

  7. The statistics of the dielectric breakdown of thin films

    CERN Document Server

    Rowland, S M

    1984-01-01

    The statistics of the dielectric breakdown of thin films of silicon monoxide and aluminium oxide have been studied. The self healing technique which allows numerous breakdowns to be observed on one sample was employed. Ramp and steady state voltage experiments are reported and the limitations of these techniques are discussed. It is shown that the experimental data on breakdown can be fitted to two-parameter Weibull distributions using mixed distribution models. Methods have been developed to facilitate the evaluation of the associated parameters from results taken over limited time periods by graphical means. The significance of these parameters and the relationship between ramp and steady state testing techniques are discussed.

  8. Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor

    Institute of Scientific and Technical Information of China (English)

    Zhuang Xiang; Qiao Ming; Zhang Bo; Li Zhao-Ji

    2012-01-01

    This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage (BV) for an ultra-high-voltage (UHV) high-side thin layer silicon-on-insulator (SOI) p-channel low-density metaloxide semiconductor (LDMOS).Compared with the conventional simulation method,the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit.The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method.Simulation results show that the off-state (on-state) BV of the SOI p-channel LDMOS can reach 741 (620) V in the 3-μm-thick buried oxide layer,50-un-length drift region,and at -400 V back-gate voltage,enabling the device to be used in a 400 V UHV integrated circuit.

  9. High-voltage breakdown studies on Si microstrip detectors

    CERN Document Server

    Albergo, S; Azzi, P; Babucci, E; Bacchetta, N; Bader, A J; Bagliesi, G; Basti, A; Biggeri, U; Bilei, G M; Bisello, D; Boemi, D; Bosi, F; Borrello, L; Bozzi, C; Braibant, S; Breuker, Horst; Bruzzi, Mara; Buffini, A; Busoni, S; Calefato, G; Candelori, A; Caner, A; Castaldi, R; Castro, A; Catacchini, E; Checcucci, B; Ciampolini, P; Civinini, C; Creanza, D; D'Alessandro, R; Da Rold, M; Demaria, N; De Palma, M; Dell'Orso, R; Marina, R D; Dutta, S; Eklund, C; Peisert, Anna; Feld, L; Fiore, L; Focardi, E; French, M; Freudenreich, Klaus; Fürtjes, A; Giassi, A; Giorgi, M A; Giraldo, A; Glessing, B; Gu, W H; Hall, G; Hammarström, R; Hebbeker, T; Hrubec, Josef; Muhtinen, M; Kaminski, A; Karimäki, V; Saint-Koenig, M; Krammer, Manfred; Lariccia, P; Lenzi, M; Loreti, M; Lübelsmeyer, K; Lustermann, W; Mättig, P; Maggi, G; Mannelli, M; Mantovani, G C; Marchioro, A; Mariotti, C; Martignon, G; McEvoy, B; Meschini, M; Messineo, A; My, S; Paccagnella, A; Palla, Fabrizio; Pandoulas, D; Papi, A; Parrini, G; Passeri, D; Pieri, M; Piperov, S; Potenza, R; Radicci, V; Raffaelli, F; Raymond, M; Santocchia, A; Schmitt, B; Selvaggi, G; Servoli, L; Sguazzoni, G; Siedling, R; Silvestris, L; Skog, K; Starodumov, Andrei; Stavitski, I; Stefanini, G; Tempesta, P; Tonelli, G; Tricomi, A; Tuuva, T; Vannini, C; Verdini, P G; Viertel, Gert M; Zie, Z; Li Ya Hong; Watts, S; Wittmer, B

    1999-01-01

    The breakdown performance of CMS barrel module prototype detectors and test devices with single and multi-guard structures were studied before and after neutron irradiation up to 2-10/sup 14/ 1 MeV equivalent neutrons. Before irradiation avalanche breakdown occurred at the guard ring implant edges. We measured 100-300 V higher breakdown voltage values for the devices with multi-guard than for devices with single-guard ring, After irradiation and type inversion the breakdown was smoother than before irradiation and the breakdown voltage value increased to 500-600 V for most of the devices. (9 refs).

  10. Breakdown voltage of metal-oxide resistors in liquid argon

    Energy Technology Data Exchange (ETDEWEB)

    Bagby, L. F. [Fermilab; Gollapinni, S. [Kansas State U.; James, C. C. [Fermilab; Jones, B. J.P. [MIT; Jostlein, H. [Fermilab; Lockwitz, S. [Fermilab; Naples, D. [Pittsburgh U.; Raaf, J. L. [Fermilab; Rameika, R. [Fermilab; Schukraft, A. [Fermilab; Strauss, T. [Bern U., LHEP; Weber, M. S. [Bern U., LHEP; Wolbers, S. A. [Fermilab

    2014-11-07

    We characterized a sample of metal-oxide resistors and measured their breakdown voltage in liquid argon by applying high voltage (HV) pulses over a 3 second period. This test mimics the situation in a HV-divider chain when a breakdown occurs and the voltage across resistors rapidly rise from the static value to much higher values. All resistors had higher breakdown voltages in liquid argon than their vendor ratings in air at room temperature. Failure modes range from full destruction to coating damage. In cases where breakdown was not catastrophic, subsequent breakdown voltages were lower in subsequent measuring runs. One resistor type withstands 131 kV pulses, the limit of the test setup.

  11. Modeling of a breakdown voltage in microdischarges

    Directory of Open Access Journals (Sweden)

    Đorđević Ivana

    2009-01-01

    Full Text Available Non-equilibrium plasmas have been used as one of the principal technologies for development of microelectronics and they are the basis for the development of new generations of nano-electronics devices required for 65 and 40 nm technologies. Microdischarges recently have become more common in everyday life. Technology of plasma etching has enabled us to develop such discharges and the field of microdischarges has grown into the most interesting field of the physics of collisional non-equilibrium plasmas. Recently, an effort to fabricate microplasma sources that can be integrated with other MEMS devices to form larger Microsystems has been made. Plasma-based microsystems can find application in bio-microelectro- mechanical system (bio-MEMS sterilization, small-scale materials processing and microchemical analysis systems. However, integrability requires not only a size reduction, but also an understanding of the physics governing the new small-scale discharges. In this paper, we have performed modeling of a breakdown voltage by using Particle-in-Cell/Monte Carlo collision (PIC/MCC code taking into account the secondary electron emission due to a high field.

  12. Breakdown voltage of discrete capacitors under single-pulse conditions

    Science.gov (United States)

    Domingos, H.; Scaturro, J.; Hayes, L.

    1981-01-01

    For electrostatic capacitors the breakdown voltage is inherently related to the properties of the dielectric, with the important parameters being the dielectric field strength which is related to the dielectric constant and the dielectric thickness. These are not necessarily related to the capacitance value and the rated voltage, but generally the larger values of capacitance have lower breakdown voltages. Foil and wet slug electrolytics can withstand conduction currents pulses without apparent damage (in either direction for foil types). For solid tantalums, damage occurs whenever the capacitor charges to the forming voltage.

  13. Study of the breakdown voltage of SiPMs

    CERN Document Server

    Chmill, V; Klanner, R; Nitschke, M; Schwandt, J

    2016-01-01

    The breakdown behaviour of SiPMs (Silicon PhotoMultiplier) with pixel sizes of 15$\\times $15, 25$\\times $25, 50$\\times $50, and 100$\\times $100 $\\mu $m$^2$, manufactured by KETEK, has been investigated. From the current-voltage characteristics measured with and without illumination by LED light of 470 nm wavelength, the current-breakdown voltage, $V_I$, and from linear fits of the voltage dependence of the SiPM gain, measured by recording pulse-area spectra, the gain-breakdown voltage, $V_G$, have been obtained. The voltage dependence of the Geiger-breakdown probability was determined from the fraction of zero photoelectron events with LED illumination. By comparing the results to a model calculation, the photodetection-breakdown voltage, $V_{PD}$, has been determined. Within experimental uncertainties, $V_I$ and $V_{PD}$ are equal and independent of pixel size. For $V_G$, a dependence on pixel size is observed. The difference $V_I - V_G$ is about 1 V for the SiPM with 15 $\\mu $m pixels, decreases with pixel ...

  14. Study of the breakdown voltage of SiPMs

    Science.gov (United States)

    Chmill, V.; Garutti, E.; Klanner, R.; Nitschke, M.; Schwandt, J.

    2017-02-01

    The breakdown behaviour of SiPMs (Silicon PhotoMultiplier) with pixel sizes of 15 × 15 , 25 × 25 , 50 × 50, and 100 × 100 μm2, manufactured by KETEK, has been investigated. From the current-voltage characteristics measured with and without illumination by LED light of 470 nm wavelength, the current-breakdown voltage, VI, and from linear fits of the voltage dependence of the SiPM gain, measured by recording pulse-area spectra, the gain-breakdown voltage, VG, have been obtained. The voltage dependence of the Geiger-breakdown probability was determined from the fraction of zero photoelectron events with LED illumination. By comparing the results to a model calculation, the photodetection-breakdown voltage, VPD, has been determined. Within experimental uncertainties, VI and VPD are equal and independent of pixel size. For VG, a dependence on pixel size is observed. The difference VI -VG is about 1 V for the SiPM with 15 μm pixels, decreases with pixel size and is compatible with zero for the SiPM with 100 μm pixels.

  15. The Electrical Breakdown of Thin Dielectric Elastomers

    DEFF Research Database (Denmark)

    Zakaria, Shamsul Bin; Morshuis, Peter H. F.; Yahia, Benslimane Mohamed

    2014-01-01

    Dielectric elastomers are being developed for use in actuators, sensors and generators to be used in various applications, such as artificial eye lids, pressure sensors and human motion energy generators. In order to obtain maximum efficiency, the devices are operated at high electrical fields....... This increases the likelihood for electrical breakdown significantly. Hence, for many applications the performance of the dielectric elastomers is limited by this risk of failure, which is triggered by several factors. Amongst others thermal effects may strongly influence the electrical breakdown strength....... In this study, we model the electrothermal breakdown in thin PDMS based dielectric elastomers in order to evaluate the thermal mechanisms behind the electrical failures. The objective is to predict the operation range of PDMS based dielectric elastomers with respect to the temperature at given electric field...

  16. Precise method for determining avalanche breakdown voltage of silicon photomultipliers

    Science.gov (United States)

    Chirikov-Zorin, I.

    2017-07-01

    A physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDErel) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDErel value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts.

  17. High Voltage Coaxial Vacuum Gap Breakdown for Pulsed Power Liners

    Science.gov (United States)

    Cordaro, Samuel; Bott-Suzuki, Simon; Caballero Bendixsen, Luis Sebastian

    2015-11-01

    The dynamics of Magnetized Liner Inertial Fusion (MagLIF)1, are presently under detailed study at Sandia National Laboratories. Alongside this, a comprehensive analysis of the influence of the specific liner design geometry in the MagLIF system on liner initiation is underway in the academic community. Recent work at UC San Diego utilizes a high voltage pulsed system (25kV, 150ns) to analyze the vacuum breakdown stage of liner implosion. Such experimental analyses are geared towards determining how the azimuthal symmetry of coaxial gap breakdown affect plasma initiation within the liner. The final aim of the experimental analysis is to assess to what scale symmetry remains important at high (MV) voltages. An analysis of the above will utilize plasma self-emission via optical MCP, current measurements, voltage measurements near the gap, exact location of breakdown via 2D b-dot probe triangulation, as well as measuring the evolution of the B-field along the length of the liner via b-dot array. Results will be discussed along with analytical calculations of breakdown mechanisms

  18. High-voltage atmospheric breakdown across intervening rutile dielectrics.

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, Kenneth Martin; Simpson, Sean; Coats, Rebecca Sue; Jorgenson, Roy Eberhardt; Hjalmarson, Harold Paul; Pasik, Michael Francis

    2013-09-01

    This report documents work conducted in FY13 on electrical discharge experiments performed to develop predictive computational models of the fundamental processes of surface breakdown in the vicinity of high-permittivity material interfaces. Further, experiments were conducted to determine if free carrier electrons could be excited into the conduction band thus lowering the effective breakdown voltage when UV photons (4.66 eV) from a high energy pulsed laser were incident on the rutile sample. This report documents the numerical approach, the experimental setup, and summarizes the data and simulations. Lastly, it describes the path forward and challenges that must be overcome in order to improve future experiments for characterizing the breakdown behavior for rutile.

  19. Modeling of High-voltage Breakdown in Helium

    Science.gov (United States)

    Xu, Liang; Khrabrov, Alexander; Kaganovich, Igor; Sommerer, Timothy

    2016-09-01

    We investigate the breakdown in extremely high reduced electric fields (E/N) between parallel-plate electrodes in helium. The left branch of the Paschen curve in the voltage range of 20-350kV and inter-electrode gap range of 0.5-3.5cm is studied analytically and with Monte-Carlo/PIC simulations. The model incorporates electron, ion, and fast neutral species whose energy-dependent anisotropic scattering, as well as backscattering at the electrodes, is carefully taken into account. Our model demonstrates that (1) anisotropic scattering is indispensable for producing reliable results at such high voltage and (2) due to the heavy species backscattered at cathode, breakdown can occur even without electron- and ion-induced ionization of the background gas. Fast atoms dominate in the breakdown process more and more as the applied voltage is increased, due to their increasing ionization cross-section and to the copious flux of energetic fast atoms generated in charge-exchange collisions.

  20. Calculation of Spark Breakdown or Corona Starting Voltages in Nonuniform Fields

    DEFF Research Database (Denmark)

    Pedersen, A.

    1967-01-01

    The processes leading to a spark breakdown or corona discharge are discussed very briefly. A quantitative breakdown criterion for use in high-voltage design is derived by which spark breakdown or corona starting voltages in nonuniform fields can be calculated. The criterion is applied to the sphere...

  1. Dielectric breakdown in nano-porous thin films

    Science.gov (United States)

    Borja, Juan Pablo

    Unknown to most computer users and mobile device enthusiasts, we have finally entered into a critical age of chip manufacturing. January of 2014 marks the official start of the quest by the semiconductor industry to successfully integrate sub 14nm process technology nodes in accordance to the International Technology Roadmap for Semiconductors (ITRS). The manufacturing of nano-scale features represents a major bottleneck of its own. However, a bigger challenge lies in reliably isolating the massive chip interconnect network. The present work is aimed at generating a theoretical and experimental framework to predict dielectric breakdown for thin films used in computer chip components. Here, a set of experimental techniques are presented to assess and study dielectric failure in novel thin films. A theory of dielectric breakdown in thin nano-porous films is proposed to describe combined intrinsic and metal ion catalyzed failure. This theory draws on experimental evidence as well as fundamental concepts from mass and electronic charge transport. The drift of metal species was found to accelerate intrinsic dielectric failure. The solubility of metals species such as Cu was found to range from 7.0x1025 ions/m3 to 1.86x1026 ions/m3 in 7% porous SiCOH films. The diffusion coefficient for Cu species was found to span from 4.2x10-19 m2/s to 1.86x10-21 m2/s. Ramped voltage stress experiments were used to identify intrinsic failure from metal catalyzed failure. Intrinsic breakdown is defined when time to failure against applied field ramp rate results in ∂(ln(TTF))/∂(ln(R)) ≈ -1. Intrinsic failure was studied using Au. Here, ∂(ln(TTF))/∂(ln(R)) ≈ -0.95, which is an experimental best case scenario for intrinsic failure. Au is commonly reluctant to ionize which means that failure occurs in the absence of ionic species. Metal catalyzed failure was investigated using reactive electrodes such as Cu, and Ag. Here, trends for ∂(ln(TTF))/∂(ln(R)) significantly

  2. A novel high-voltage device structure with an N+ ring in substrate and the breakdown voltage model

    Institute of Scientific and Technical Information of China (English)

    Li Qi; Zhu Jinluan; Wang Weidong; Yue Hongwei; Jin Liangnian

    2011-01-01

    A novel high-voltage device structure with a floating heavily doped N+ ring embedded in the substrate is reported,which is called FR LDMOS.When the N+ ring is introduced in the device substrate,the electric field peak of the main junction is reduced due to the transfer of the voltage from the main junction to the N+ ring junction,and the vertical breakdown characteristic is improved significantly.Based on the Poisson equation of cylindrical coordinates,a breakdown voltage model is developed.The numerical results indicate that the breakdown voltage of the proposed device is increased by 56% in comparison to conventional LDMOS.

  3. Altitude Correction for Breakdown Voltages of Long Air-Gaps

    Institute of Scientific and Technical Information of China (English)

    Wang Xuan; Li Yunge; Cao Xiaolong; Su Zhiyi; Liu Ying

    2006-01-01

    The breakdown voltage of long air-gaps in high-voltage transmission systems depends on not only the waveform of the applied voltage, but also the atmospheric conditions. Based on the results of the research project on the minimum air clearance for 800-Kv HVDC substations at high altitudes, and also on the monthly and yearly statistics of the atmospheric data of last ten years and the altitude correction of the atmospheric data of last ten years, the altitude correction of the air-gaps for the 800-Kv DC system under plan, 500-Kv AC system to be built, and 1000-Kv AC system under plan in the Inner Mongolia Plateau and the Yungui Plateau in China were studied with parameter G method. Correction factors for switching and lightning impulses were calculated and then compared with those achieved according to IEC 71. It is shown that IEC 71 is appropriate for damp regions, and correction factors differ between plateau regions in China because of different atmospheric conditions.

  4. A model based DC analysis of SiPM breakdown voltages

    CERN Document Server

    Nagy, Ferenc; Kalinka, Gabor; Molnar, Jozsef

    2016-01-01

    A new method to determine the breakdown voltage of SiPMs is presented. It is backed up by a DC model which describes the breakdown phenomenon by distinct avalanche turn-on ($V_{01}$) and turn off ($V_{10}$) voltages. It is shown that $V_{01}$ is related to the 'breakdown voltage' that previous DC methods derive from simple reverse current-voltage measurements, while $V_{10}$ is the 'real' breakdown voltage commonly obtained from complex gain-voltage measurements. The proposed method reveals how the microcell population distributes around $V_{01}$ and $V_{10}$. It is found that if this distribution is assumed to be normal, then both voltages and even their standard deviation can readily be extracted from current-voltage curves. Measurements are in good agreement with the theoretical model.

  5. Study of predicting breakdown voltage of stator insulation in generator based on BP neural network

    Institute of Scientific and Technical Information of China (English)

    Jiang Yuao; Zhang Aide; Liu Libing; Du Yu; Gao Naikui; Peng Zongren

    2007-01-01

    The breakdown voltage plays an important role in evaluating residual life of stator insulation in generator. In this paper, we discussed BP neural network that was used to predict the breakdown voltage of stator insulation in generator of 300 MW/18 kV. At first the neural network has been trained by the samples that include the varieties of dielectric loss factor tanδ, the partial discharge parameters and breakdown voltage. Then we tried to predict the breakdown voltage of samples and stator insulations subjected to multi-stress aging by the trained neural network. We found that it's feasible and accurate to predict the voltage. This method can be applied to predict breakdown voltage of other generators which have the same insulation structure and material.

  6. High Voltage Breakdown Levels in Various EPC Potting Materials

    Science.gov (United States)

    Komm, David S.

    2006-01-01

    This viewgraph presentation reviews exploration activities at JPL into various potting materials. Since high power space-borne microwave transmitters invariably use a vacuum tube as a final power amplifier, and this tube requires high electrode voltages for operation. The associated high voltage insulation typically represents a significant fraction of the mass of the transmitter. Since mass is always a premium resource on board spacecraft, we have been investigating materials with the potential to reduce the mass required for our applications here at JPL. This paper describes electrical breakdown results obtained with various potting materials. Conathane EN-11 (polyurethane) is the traditional HVPS encapsulant at JPL, but due to temperature limitations and durability issues it was deemed inappropriate for the particular application (i.e., CloudSat radar). The choices for the best available materials were epoxies, or silicones. Epoxies are too rigid, and were deemed inadvisable. Two silicones were further investigated (i.e.,ASTM E595- 93e2: GE RTV566(R) and Dow Corning 93-500X(R), another compound was considered (i.e., DC material, Sylgard 184(R)). "Loading" (adding filler materials) the potting compound will frequently alter the final material properties. Powdered alumina and borosilicate glass known as "microballoons" were investigated as possible loading materials. The testing of the materials is described. Each of the two loading materials offers advantages and disadvantages. The advantages and disadvantages are described.

  7. Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

    Directory of Open Access Journals (Sweden)

    Xiao-Yu Tang

    2015-01-01

    Full Text Available With the rapid development of the power integrated circuit technology, polysilicon resistors have been widely used not only in traditional CMOS circuits, but also in the high voltage applications. However, there have been few detailed reports about the polysilicon resistors’ characteristics, like voltage and temperature coefficients and breakdown behaviors which are critical parameters of high voltage applications. In this study, we experimentally find that the resistance of the polysilicon resistor with a relatively low doping concentration shows negative voltage and temperature coefficients, while that of the polysilicon resistor with a high doping concentration has positive voltage and temperature coefficients. Moreover, from the experimental results of breakdown voltages of the polysilicon resistors, it could be deduced that the breakdown of polysilicon resistors is thermally rather than electrically induced. We also proposed to add an N-type well underneath the oxide to increase the breakdown voltage in the vertical direction when the substrate is P-type doped.

  8. DC high voltage to drive helium plasma jet comprised of repetitive streamer breakdowns

    CERN Document Server

    Wang, Xingxing

    2016-01-01

    This paper demonstrates and studies helium atmospheric pressure plasma jet comprised of series of repetitive streamer breakdowns, which is driven by a pure DC high voltage (auto-oscillations). Repetition frequency of the breakdowns is governed by the geometry of discharge electrodes/surroundings and gas flow rate. Each next streamer is initiated when the electric field on the anode tip recovers after the previous breakdown and reaches the breakdown threshold value of about 2.5 kV/cm. Repetition frequency of the streamer breakdowns excited using this principle can be simply tuned by reconfiguring the discharge electrode geometry. This custom-designed type of the helium plasma jet, which operates on the DC high voltage and is comprised of the series of the repetitive streamer breakdowns at frequency about 13 kHz, is demonstrated.

  9. Electrical conduction mechanism in bulk ceramic insulators at high voltages until dielectric breakdown

    Science.gov (United States)

    Neusel, C.; Jelitto, H.; Schneider, G. A.

    2015-04-01

    In order to develop and verify a dielectric breakdown model for bulk insulators thicker than 100 μm, the knowledge of the dominating conduction mechanism at high electric fields, or respectively voltages, is necessary. The dielectric breakdown is the electrical failure of an insulator. In some existing breakdown models, ohmic conduction is assumed as dominating conduction mechanism. For verification, the dominating dc conduction mechanism of bulk insulators at room temperature was investigated by applying high voltages up to 70 kV to the insulator until dielectric breakdown occurs. Four conduction models, namely, ohmic, space charge limited, Schottky, and Poole-Frenkel conduction, were employed to identify the dominating conduction mechanism. Comparing the calculated permittivities from the Schottky and Poole-Frenkel coefficients with experimentally measured permittivity, Schottky and Poole-Frenkel conduction can be excluded as dominating conduction mechanism. Based on the current density voltage characteristics (J-V-curve) and the thickness-dependence of the current density, space charge limited conduction (SCLC) was identified to be the dominating conduction mechanism at high voltages leading to dielectric breakdown. As a consequence, breakdown models based on ohmic conduction are not appropriate to explain the breakdown of the investigated bulk insulators. Furthermore, the electrical failure of the examined bulk insulators can only be described correctly by a breakdown model which includes SCLC as conduction mechanism.

  10. Ionizing potential waves and high-voltage breakdown streamers.

    Science.gov (United States)

    Albright, N. W.; Tidman, D. A.

    1972-01-01

    The structure of ionizing potential waves driven by a strong electric field in a dense gas is discussed. Negative breakdown waves are found to propagate with a velocity proportional to the electric field normal to the wavefront. This causes a curved ionizing potential wavefront to focus down into a filamentary structure, and may provide the reason why breakdown in dense gases propagates in the form of a narrow leader streamer instead of a broad wavefront.

  11. Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my [Centre of Innovative Nanostructures and Nanodevices, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750 Tronoh, Perak (Malaysia)

    2014-03-24

    Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

  12. Breakdown Voltage Research of Penning Gas Mixture in Plasma Display Panel

    Institute of Scientific and Technical Information of China (English)

    Guo Bingang; Liu Chunliang; Song Zhongxiao; Fan Yufeng; Xia Xing; Liu Liu; Fan Duowang

    2005-01-01

    Paschen law and equations, which ignore the influence of the Penning ionization on the electron ionization coefficient (α), are always used as the approximation of the breakdown voltage criterion of the Penning gas mixture in current researches of discharge characteristics of the plasma display panel (PDP). It is doubtful that whether their results match the facts. Based on the Townsend gas self-sustaining discharge condition and the chemical kinetics analysis of the Penning gas mixture discharging in PDP, the empirical equation to describe the breakdown of the Penning gas mixture is given. It is used to calculate the breakdown voltage curves of Ne-Xe/MgO and Ne-Ar/MgO in a testing macroscopic discharge cell of AC-PDP. The effective secondary electron emission coefficients (γeff) of the MgO protective layers are derived by comparing the breakdown voltage curves obtained from the empirical equation with the experimental data of breakdown voltages. In comparison with the results calculated by the Paschen law and the equation which ignore the influence of the Penning ionization on α , the results calculated by the empirical equation have better conformity with experimental data. The empirical equation characterizes the breakdown of the Penning gas mixture in PDP effectively, and gives a convenient way to study its breakdown characteristics and the secondary electron emission behaviors.

  13. Air Breakdown Behavior of Two Series Gaps for Composite Switching Impulse/Alternating Voltage

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    More and more high voltage transmission lines make use of rubber housed ZnO arresters in series with another air gap (for example, the insulator gap) as lighting protection elements. Many test results of ZnO arresters protection performance show that this insulation arrangement is suitable for practical lines according to results based on only simple impulse voltage. This paper uses a composite voltage (switching impulse voltage/alternating voltage) to determine the air breakdown behavior of the conductor-rod gap in series with the sphere gap. In the test, the switching impulse voltage is applied to the conductor while the alternating voltage is applied to the rod and one sphere and the other sphere is grounded. The results show that in some cases, the value of the U50% sparkover voltage for the conductor-rod gap with the composite voltage is nearly only half of that for just the simple impulse voltage.

  14. A breakdown voltage model for implanted resurf p-LDMOS device on n+ buried layer

    NARCIS (Netherlands)

    Zhou, Ming-Jiang; Van Calster, A.

    1994-01-01

    This paper presents an analytical expression of the breakdown voltage of a high voltage implanted RESURF p-LDMOS device which uses the n+ buried layer as an effective device substrate. In this model, the doping profile of the buried layer is considered and discussed. The implant dose for the drift r

  15. Suppression of Voltage Breakdown in High-Gradient RF Structures

    Science.gov (United States)

    Peter, W.; Garate, E.; Shiloh, J.; Mako, F.; Silberglitt, R.

    1996-11-01

    Experimental results of a promising concept for raising the breakdown limit in accelerating structures by the use of semiconducting or insulating cavity coatings are presented. Extensive experimental measurements of various coatings on OFHC Cu electrodes in the dc regime show that electrical breakdown can be increased from a value of 40 MV/m for bare Copper to 115 MV/m for a specially-coated Copper electrode. TiN-coated electrodes at use in the Stanford Linear Accelerator Center (SLAC) were measured to undergo breakdown at 50 MV/m. Dark current levels from our special coatings are over six orders of magnitude less than TiN-coated Copper even after arcing. These coatings can decrease the secondary emission levels, are mechanically stable, are not sensitive to radiation, do not affect the cavity Q, and will not poison the cathode. Hot-tests of coated X-band cavities will be performed in collaboration with SLAC.

  16. Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes

    NARCIS (Netherlands)

    Bijlsma, S.J.; Bijlsma, Sipke J.; van Kranenburg, H.; Nieuwesteeg, K.J.B.M.; Pitt, Michael G.; Verweij, Jan F.; Verweij, J.F.

    1996-01-01

    Electrical breakdown, both intrinsic and extrinsic, of thin film diodes used as switches in active matrix addressed liquid crystal displays has been studied using electrical measurements, thermal measurements, thermal 3D simulations, electrical simulations and post breakdown observations. The diodes

  17. Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages

    CERN Document Server

    Kum, B H; Shin, M W; Park, J D

    1999-01-01

    This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si sub x B sub y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm sup 2 at a forward voltage of 2 V. The breakdown of the Pt. 4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

  18. Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

    Science.gov (United States)

    Dalla Betta, G.-F.; Ayllon, N.; Boscardin, M.; Hoeferkamp, M.; Mattiazzo, S.; McDuff, H.; Mendicino, R.; Povoli, M.; Seidel, S.; Sultan, D. M. S.; Zorzi, N.

    2016-09-01

    We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

  19. Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET

    Science.gov (United States)

    Daghighi, Arash; Hematian, Hadi

    2017-03-01

    In this paper, we report a diamond-shaped body contact (DSBC) for silicon-on-insulator (SOI) LDMOSFET. Several DSBC devices along with conventional body contact (CBC) structures are laid out using 0.35 μm SOI MOSFET foundry process. The DSBC device is designed using the same standard layers as in the CBC structure and the contact layout is adapted to process design rules. Experimental characterization of the CBC and DSBC devices in terms of off-state breakdown voltage (BVoff), on-state breakdown voltage (BVon), on-resistance (Ron) and device foot print showed 19% improvement in BVon compared DSBC device with that of the CBC structure. BVoff and Ron of both of the devices are identical. The device foot print is smaller in DSBC device by 11% compared with that of the CBC structure leading to enhanced "On-resistance × Area" figure of merit where smaller high voltage SOI LDMOSEFT reduces the area and cost of power integrated circuits. In order to explain BVon improvement of DSBC structures, three-dimensional (3-D) device simulation is carried out to clarify the lateral BJT action and breakdown mechanism. It is demonstrated that the number of P+ diffusions in DSBC device can be increased to improve BVon without increasing "On-resistance × Area". The on-state breakdown voltage improvement and area efficiency of the diamond-shaped body contact proposes it as a promising candidate for reliable operation of SOI LDMOSFET.

  20. Breakdown Characteristic Analysis of Paper- Oil Insulation under AC and DC Voltage

    Science.gov (United States)

    Anuar, N. F.; Jamail, N. A. M.; Rahman, R. A.; Kamarudin, M. S.

    2017-08-01

    This paper presents the study of breakdown characteristic of Kraft paper insulated with two different types of insulating fluid, which are Palm oil and Coconut oil. Palm oil and Coconut oil are chosen as the alternative fluid to the transformer oil because it has high potential and environmentally-friendly. The Segezha Kraft papers with various thicknesses (65.5 gsm, 75 gsm, 85gsm, 90 gsm) have been used in this research. High Voltage Direct Current (HVDC), High Voltage Alternating Current (HVAC) and carbon track and severity analysis is conducted to observe the sample of aging Kraft paper. These samples have been immersed using Palm oil and Coconut oil up to 90 days to observe the absorption rate. All samples started to reach saturation level at 70 days of immersion. HVDC and HVAC breakdown experiments have been done after the samples had reached the saturation level based on normal condition, immersed in Palm oil and immersed in Coconut oil. All samples immersed in liquid show different breakdown voltage reading compared to normal condition. The analysis of carbon track and severity on surface has been done using Analytical Scanning Electron Microscope (SEM) Analysis. The results of the experiment show that the sample of Kraft paper immersed in Palm oil was better than Coconut oil immersed sample. Therefore the sample condition was the main factor that determines the value of breakdown voltage test. Introduction

  1. A new analytical model of high voltage silicon on insulator (SOI) thin film devices

    Institute of Scientific and Technical Information of China (English)

    Hu Sheng-Dong; Zhang Bo; Li Zhao-Ji

    2009-01-01

    A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films, and can come to 141 V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (VB,V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.

  2. Experimental Modelling of the Breakdown Voltage of Air Using Design of Experiments

    Directory of Open Access Journals (Sweden)

    REZOUGA, M.

    2009-02-01

    Full Text Available Many experimental and numerical studies were devoted to the electric discharge of air, and some mathematical models were proposed for the critical breakdown voltage. As this latter depends on several parameters, it is difficult to find a formula, theoretical or experimental, which considers many factors. The aim of this paper is to model the critical breakdown voltage in a "Sphere-Sphere� electrodes system by using the methodology of experimental designs. Several factors were considered, such as geometrical factors (inter-electrodes interval, diameter of the electrodes and climatic factors (temperature, humidity. Two factorial centred faces experimental designs (CCF were carried out, a first one for the geometrical factors and a second one for the climatic factors. The obtained results made it possible to propose mathematical models and to study the interactions between the various factors.

  3. Prediction of the breakdown voltage of transformer oil based on a backpropagation network

    Energy Technology Data Exchange (ETDEWEB)

    Cao Shun' an; Li Rui; Sheng Kai [Wuhan Univ., Hubei Province (China). Dept. of Water Quality Engineering

    2008-03-15

    Prediction of the breakdown voltage of transformer oil facilitates the early fault diagnosis of transformers, and provides a scientific basis for the prevention of faults in transformer oil. In this paper, based on the correlation between performance parameters of transformer oil, along with the excellent fault-tolerant ability, prominent non-linear approximation capability and self-learning capacity of backpropagation (BP) networks, a BP network with a BP algorithm and a BP network with an improved BP algorithm are developed to simulate the correlation between breakdown voltage and four relevant parameters, using the monitoring data of transformer oil. The results show that the latter algorithm gives more accurate predicted values, which proves to be of high application value. (orig.)

  4. Voltage breakdown follower avoids hard thermal constraints in a Geiger mode avalanche photodiode.

    Science.gov (United States)

    Viterbini, M; Nozzoli, S; Poli, M; Adriani, A; Nozzoli, F; Ottaviano, A; Ponzo, S

    1996-09-20

    A novel approach to single-photon detection by means of an avalanche photodiode is described and preliminary results obtained by implementation of a prototype are reported. The electronic circuit (breakdown voltage follower) avoids the use of complex temperature controls typically used with these devices, thus reducing system complexity and cost. Data obtained without any thermoregulation show the same behavior with respect to systems thermoregulated to within a few hundredths of a degree celsius.

  5. Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

    Directory of Open Access Journals (Sweden)

    Sangeeta Singh

    2016-03-01

    Full Text Available In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS to lower the breakdown voltage of conventional impact ionization MOS (IMOS and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization and source induced barrier tunneling. The silicide source offers very low parasitic resistance, the outcome of which is an increment in voltage drop across the intrinsic region for the same applied bias. This reduces operating voltage and hence, it exhibits a significant reduction in both breakdown and threshold voltage. STS-IMOS shows high immunity against hot electron damage. As a result of this the device reliability increases magnificently. The analytical model for impact ionization current (Iii is developed based on the integration of ionization integral (M. Similarly, to get Schottky tunneling current (ITun expression, Wentzel–Kramers–Brillouin (WKB approximation is employed. Analytical models for threshold voltage and subthreshold slope is optimized against Schottky barrier height (ϕB variation. The expression for the drain current is computed as a function of gate-to-drain bias via integral expression. It is validated by comparing it with the technology computer-aided design (TCAD simulation results as well. In essence, this analytical framework provides the physical background for better understanding of STS-IMOS and its performance estimation.

  6. Two dimensional triangulation of breakdown in a high voltage coaxial gap.

    Science.gov (United States)

    Cordaro, S W; Bott-Suzuki, S C; Bendixsen, L S Caballero; Atoyan, Levon; Byvank, Tom; Potter, William; Kusse, B R; Greenly, J B

    2015-07-01

    We describe a technique by which magnetic field probes are used to triangulate the exact position of breakdown in a high voltage coaxial vacuum gap. An array of three probes is placed near the plane of the gap with each probe at 90° intervals around the outer (anode) electrode. These probes measure the azimuthal component of the magnetic field and are all at the same radial distance from the cylindrical axis. Using the peak magnetic field values measured by each probe, the current carried by the breakdown channel, and Ampères law we can calculate the distance away from each probe that the breakdown occurred. These calculated distances are then used to draw three circles each centered at the centers of the corresponding magnetic probes. The common intersection of these three circles then gives the predicted azimuthal location of the center of the breakdown channel. Test results first gathered on the coaxial gap breakdown device (240 A, 25 kV, 150 ns) at the University of California San Diego and then on COBRA (1 MA, 1 MV, 100 ns) at Cornell University indicate that this technique is relatively accurate and scales between these two devices.

  7. Comparative Study of Breakdown Voltage of Mineral, Synthetic and Natural Oils and Based Mineral Oil Mixtures under AC and DC Voltages

    Directory of Open Access Journals (Sweden)

    Abderrahmane Beroual

    2017-04-01

    Full Text Available This paper deals with a comparative study of AC and DC breakdown voltages of based mineral oil mixtures with natural and synthetic esters mainly used in high voltage power transformers. The goal was to analyze the performances of oil mixtures from the dielectric withstand point of view and to predict the behavior of transformers originally filled with mineral oil and re-filled with synthetic or natural ester oils when emptied for maintenance. The study concerns mixtures based on 20%, 50%, and 80% of natural and synthetic ester oils. AC breakdown voltages were measured using a sphere-sphere electrode system according to IEC 60156 specifications; the same specification was adopted for DC measurements since there is no standard specifications for this voltage waveform. A statistical analysis of the mean values, standard deviations, and histograms of breakdown voltage data was carried out. The Normal and Weibull distribution functions were used to analyze the experimental data and the best function that the data followed was used to estimate the breakdown voltage with risk of 1%, 10%, and 50% probability. It was shown that whatever the applied voltage waveforms, ester oils always have a significantly higher breakdown voltage than mineral oil. The addition of only 20% of natural or synthetic ester oil was sufficient to considerably increase the breakdown voltage of mineral oil. The dielectric strength of such a mixture is much higher than that of mineral oil alone and can reach that of ester oils. From the point of view of dielectric strength, the mixtures constitute an option for improving the performance of mineral oil. Thus, re-filling of transformers containing up to 20% mineral oil residues with ester oils, does not present any problem; it is even advantageous when considering only the breakdown voltage. Under AC, the mixtures with natural ester always follow the behavior of vegetable oil alone. With the exception of the 20% mixture of natural

  8. Improving breakdown voltage performance of SOI power device with folded drift region

    Institute of Scientific and Technical Information of China (English)

    李琦; 李海鸥; 黄平奖; 肖功利; 杨年炯

    2016-01-01

    A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/µm with a 10 µm drift length, which increases by 200%in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V.

  9. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

    Science.gov (United States)

    Jun, Luo; Sheng-Lei, Zhao; Min-Han, Mi; Wei-Wei, Chen; Bin, Hou; Jin-Cheng, Zhang; Xiao-Hua, Ma; Yue, Hao

    2016-02-01

    The effects of gate length LG on breakdown voltage VBR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with LG = 1 μm˜ 20 μm. With the increase of LG, VBR is first increased, and then saturated at LG = 3 μm. For the HEMT with LG = 1 μm, breakdown voltage VBR is 117 V, and it can be enhanced to 148 V for the HEMT with LG = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with LG > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG = 3 μm˜20 μm, and their breakdown voltages are in a range of 140 V-156 V. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61204085).

  10. A consistent approach to estimate the breakdown voltage of high voltage electrodes under positive switching impulses

    Science.gov (United States)

    Arevalo, L.; Wu, D.; Jacobson, B.

    2013-08-01

    The main propose of this paper is to present a physical model of long air gap electrical discharges under positive switching impulses. The development and progression of discharges in long air gaps are attributable to two intertwined physical phenomena, namely, the leader channel and the streamer zone. Experimental studies have been used to develop empirical and physical models capable to represent the streamer zone and the leader channel. The empirical ones have led to improvements in the electrical design of high voltage apparatus and insulation distances, but they cannot take into account factors associated with fundamental physics and/or the behavior of materials. The physical models have been used to describe and understand the discharge phenomena of laboratory and lightning discharges. However, because of the complex simulations necessary to reproduce real cases, they are not in widespread use in the engineering of practical applications. Hence, the aim of the work presented here is to develop a model based on physics of the discharge capable to validate and complement the existing engineering models. The model presented here proposes a new geometrical approximation for the representation of the streamer and the calculation of the accumulated electrical charge. The model considers a variable streamer region that changes with the temporal and spatial variations of the electric field. The leader channel is modeled using the non local thermo-equilibrium equations. Furthermore, statistical delays before the inception of the first corona, and random distributions to represent the tortuous nature of the path taken by the leader channel were included based on the behavior observed in experimental tests, with the intention of ensuring the discharge behaved in a realistic manner. For comparison purposes, two different gap configurations were simulated. A reasonable agreement was found between the physical model and the experimental test results.

  11. An analytical model for the drain-source breakdown voltage of RF LDMOS power transistors with a Faraday shield

    Institute of Scientific and Technical Information of China (English)

    Zhang Wenmin; Zhang Wei; Fu Jun; Wang Yudong

    2012-01-01

    An analytical model for the drain-source breakdown voltage of an RF LDMOS power transistor with a Faraday shield is derived on the basis of the solution of the 2D Poisson equation in a p-type epitaxial layer,as well as an n-type drift region by means of parabolic approximation of electrostatic potential.The model captures the influence of the p-type epitaxial layer doping concentration on the breakdown voltage,compared with the previously reported model,as well as the effect of the other device parameters.The analytical model is validated by comparing with a numerical device simulation and the measured characteristics of LDMOS transistors.Based on the model,optimization of LDMOS device parameters to achieve proper trade-off between the breakdown voltage and other characteristic parameters such as on-resistance and feedback capacitance is analyzed.

  12. High-Speed InGaAs/InP Double Heterostructure Bipolar Transistor with High Breakdown Voltage

    Institute of Scientific and Technical Information of China (English)

    JIN Zhi; SU Yong-Bo; CHENG Wei; LIU Xin-Yu; XU An-Huai; QI Ming

    2008-01-01

    We design and fabricate an InGaAs/InP double heterostructure bipolar transistor (DHBT). The spike of the conduction band discontinuity between InGaAs base and InP collector is successfully eliminated by insertion of an InGaAs layer and two InGaAsP layers. The current gain cutoff frequency and maximum oscillation frequency are as high as 155 and 144GHz. The breakdown voltage in common-emitter configuration is more than 7V. The high cutoff frequency and high breakdown voltage make high-speed and high-power circuits possible.

  13. Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes

    Science.gov (United States)

    Yuan, Hao; Tang, Xiaoyan; Song, Qingwen; Zhang, Yimen; Zhang, Yuming; Yang, Fei; Niu, Yingxi

    2015-01-01

    The analytical models of on-resistance and reverse breakdown voltage for 4H-SiC floating junction SBD are presented with the analysis of the transport path of the carriers and electric field distribution in the drift region. The calculation results from the analytical models well agree with the simulation results. The effects of the key structure parameters on specific on-resistance and breakdown voltage are described respectively by analytical models. Moreover, the relationship between BFOM and parameters of floating junction are investigated. It is proved that the analytical models are more convenient for the design of the floating junction SBDs.

  14. Improving breakdown voltage performance of SOI power device with folded drift region

    Science.gov (United States)

    Qi, Li; Hai-Ou, Li; Ping-Jiang, Huang; Gong-Li, Xiao; Nian-Jiong, Yang

    2016-07-01

    A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. Project supported by the Guangxi Natural Science Foundation of China (Grant Nos. 2013GXNSFAA019335 and 2015GXNSFAA139300), Guangxi Experiment Center of Information Science of China (Grant No. YB1406), Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing of China, Key Laboratory of Cognitive Radio and Information Processing (Grant No. GXKL061505), Guangxi Key Laboratory of Automobile Components and Vehicle Technology of China (Grant No. 2014KFMS04), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

  15. One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

    Institute of Scientific and Technical Information of China (English)

    张珺; 郭宇锋; 徐跃; 林宏; 杨慧; 洪洋; 姚佳飞

    2015-01-01

    A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device.

  16. Visible light laser voltage probing on thinned substrates

    Energy Technology Data Exchange (ETDEWEB)

    Beutler, Joshua; Clement, John Joseph; Miller, Mary A.; Stevens, Jeffrey; Cole, Jr., Edward I.

    2017-03-21

    The various technologies presented herein relate to utilizing visible light in conjunction with a thinned structure to enable characterization of operation of one or more features included in an integrated circuit (IC). Short wavelength illumination (e.g., visible light) is applied to thinned samples (e.g., ultra-thinned samples) to achieve a spatial resolution for laser voltage probing (LVP) analysis to be performed on smaller technology node silicon-on-insulator (SOI) and bulk devices. Thinning of a semiconductor material included in the IC (e.g., backside material) can be controlled such that the thinned semiconductor material has sufficient thickness to enable operation of one or more features comprising the IC during LVP investigation.

  17. Dielectric-breakdown and conduction-mechanism in a thinned alkali-free glass

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hoikwan; Lanagan, Michael T. [The Pennsylvania State University, University Park, PA (United States)

    2014-10-15

    The leakage current in alkali-free glass was analyzed to understand the dielectric breakdown behavior and the potential conduction mechanism. The dielectric breakdown strength and the leakage current were increased after the thickness of the glass had been recuded. To identify the predominant conduction mechanism, we carefully interpreted the dc voltage-current curves via fitting with various conduction mechanisms, e.g., Poole-Frenkel emission, Schottky emission, space charge-limited current, and hopping conduction. The result suggested that the space-charge-limited current and the hopping conduction of thermally-excited carriers were the most likely mechanisms of conduction in alkali-free glass.

  18. Low-voltage Driving Phototransistor Based on Dye-sensitized Nanocrystalline Titanium Dioxide Thin Films

    CERN Document Server

    Wang, Xiaoqi; Cai, Chuanbing

    2012-01-01

    Photo-gated transistors based on dye-sensitized nanocrystalline titanium dioxide thin film are established. A transistor-like transport behavior characterized by the linear increase, saturated plateau, and breakdown-like increase in the voltage-current curve is achievable with a low driven bias for the present device. The response current exhibits a linear dependence on the intensity of gated light, and the measured maximum photosensitivity is approximately 0.1 A/W. The dynamic responses for various light frequencies and their dependences on the load resistances are investigated as well. The cut-off frequency of ~50 Hz is abstracted, indicating the potential application for economical and efficient light switch or optical communication unit. The dc photo-gated response is explained by the energy level diagram, and is numerically simulated by an equivalent circuit model, suggesting a clear correlation between photovoltaic and photoconductive behaviors as well as their optical responses.

  19. Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode

    Science.gov (United States)

    Resfa, A.; Menezla, Brahimi. R.; Benchhima, M.

    2014-08-01

    This work aims to determine the characteristic I (breakdown voltage) of the inverse current in a GaAs PN junction diode, subject to a reverse polarization, while specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P+N structure using like material of basis the III-V compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region (SCR) and that is the trap density donor and acceptor states. The carrier crossing the space charge region (SCR) of W thickness creates N electron—hole pairs: for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region (SCR) by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I(V) current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions (1) and (3), the current thermal generation in the region (2), the leakage current in the surface, and the breakdown voltage.

  20. Current-Voltage Relations for Electrochemical Thin Films

    CERN Document Server

    Bazant, M Z; Bayly, B J; Bazant, Martin Z.; Chu, Kevin T.

    2004-01-01

    The dc response of an electrochemical thin film, such as the separator in a micro-battery, is analyzed by solving the Poisson-Nernst-Planck equations, subject to boundary conditions appropriate for an electrolytic/galvanic cell. The model system consists of a binary electrolyte between parallel-plate electrodes, each possessing a compact Stern layer, which mediates Faradaic reactions with nonlinear Butler-Volmer kinetics. Analytical results are obtained by matched asymptotic expansions in the limit of thin double layers and compared with full numerical solutions. The analysis shows that (i) decreasing the system size relative to the Debye screening length decreases the voltage of the cell and allows currents higher than the classical diffusion-limited current; (ii) finite reaction rates lead to the important possibility of a reaction-limited current; (iii) the Stern-layer capacitance is critical for allowing the cell to achieve currents above the reaction-limited current; and (iv) all polarographic (current-v...

  1. Impact of field limiting ring technique on breakdown voltage of irradiated Si sensors

    CERN Document Server

    Bhardwaj, Ashutosh; Jha Manoj, Kr; Kumar, Ashish; Ranjan, Kirti; Shivpuri, RK; Srivastava-Ajay, K

    2003-01-01

    The very intense radiation environment of high luminosity future colliding beam experiments (like LHC) makes radiation hardness the most important issue for Si detectors. One of the central issues concerning all LHC experiments is the breakdown performance of these detectors. The major macroscopic effect of radiation damage in determining the viability of long-term operation of Si sensors is the change in effective charge carrier concentration (N //e//f//f), leading to type-inversion. Floating field limiting guard rings have been established as means of improving the breakdown performance of Si detectors. In this work the usefulness of the guard rings in improving the breakdown performance of detectors after type-inversion has been studied. Simulations are carried out to study the effect of change in N//e//f//f on the breakdown performance of optimized guard ring structure using two dimensional device simulation program, TMA- MEDICI. Detailed calculations using Hamburg Model have allowed the parameterization ...

  2. Impact of field limiting ring technique on breakdown voltage of irradiated Si sensors

    CERN Document Server

    Bhardwaj, A; Namrata, S; Chatterji, S; Srivastava-Ajay, K; Kumar, A; Jha, Manoj Kumar; Shivpuri, R K

    2004-01-01

    The very intense radiation environment of high luminosity future colliding beam experiments (like LHC) makes radiation hardness the most important issue for Si detectors. One of the central issues concerning all LHC experiments is the breakdown performance of these detectors. The major macroscopic effect of radiation damage in determining the viability of long-term operation of Si sensors is the change in effective charge carrier concentration (N/sub eff/), leading to type-inversion. Floating field limiting guard rings have been established as means of improving the breakdown performance of Si detectors. In this work the usefulness of the guard rings in improving the breakdown performance of detectors after type-inversion has been studied. Simulations are carried out to study the effect of change in N/sub eff/ on the breakdown performance of optimized guard ring structure using two dimensional device simulation program, TMA- MEDICI. Detailed calculations using Hamburg Model have allowed the parameterization o...

  3. Gas Breakdown in the Sub-Nanosecond Regime with Voltages Below 15 KV

    Science.gov (United States)

    2013-06-01

    here gas breakdown during nanosecond pulses occurs mainly as corona discharges on wire antennas, and represents an unwanted effect - General...switching for pulsed power applications Published data [2,3,4,5] for subnanosecond breakdown are mainly related to discharges in gases with...pressures at or above one atmosphere , or for liquids, and for quasi- homogeneous electric fields which are at least on the order of several 100 kV/cm. For

  4. Solid-state nanopore localization by controlled breakdown of selectively thinned membranes

    Science.gov (United States)

    Carlsen, Autumn T.; Briggs, Kyle; Hall, Adam R.; Tabard-Cossa, Vincent

    2017-02-01

    We demonstrate precise positioning of nanopores fabricated by controlled breakdown (CBD) on solid-state membranes by spatially varying the electric field strength with localized membrane thinning. We show 100 × 100 nm2 precision in standard SiN x membranes (30–100 nm thick) after selective thinning by as little as 25% with a helium ion beam. Control over nanopore position is achieved through the strong dependence of the electric field-driven CBD mechanism on membrane thickness. Confinement of pore formation to the thinned region of the membrane is confirmed by TEM imaging and by analysis of DNA translocations. These results enhance the functionality of CBD as a fabrication approach and enable the production of advanced nanopore devices for single-molecule sensing applications.

  5. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

  6. Reverse flow and vortex breakdown in a shear-thinning fluid

    Energy Technology Data Exchange (ETDEWEB)

    Cabeza, C; Sarasua, G; Barrere, N; Marti, A C, E-mail: cecilia@fisica.edu.uy [Instituto de Fisica, Facultad de Ciencias, UDELAR (Uruguay)

    2011-05-01

    The effect of polymer concentration on the development of reverse secondary flow and vortex breakdown was studied using a viscoelastic solution of polyacrlylamide in water. The fluid was contained in cylindrical containers of two different radii, the top end wall of which rotated at a varying speed, thus, imparting a circulating motion to the fluid. Whereas using a newtonian fluid, streamlines will occupy the entire container, the flow of a shear-thinning fluid may divide into two cells of opposite circulating motion. The curve of critical Reynolds and elasticity numbers (Re, E) values corresponding to the development of reverse flow was obtained over a wide range of Re values. Vortex breakdown was found to occur at extremely low Re values.

  7. Vacuum breakdown limit and quantum efficiency obtained for various technical metals using dc and pulsed voltage sources

    CERN Document Server

    Le Pimpec, F; Paraliev, M; Ganter, R; Hauri, C; Ivkovic, S; 10.1116/1.3478300

    2010-01-01

    For the SwissFEL project, an advanced high gradient low emittance gun is under development. Reliable operation with an electric field, preferably above 125 MV/m at a 4 mm gap, in the presence of an UV laser beam, has to be achieved in a diode configuration in order to minimize the emittance dilution due to space charge effects. In the first phase, a DC breakdown test stand was used to test different metals with different preparation methods at voltages up to 100 kV. In addition high gradient stability tests were also carried out over several days in order to prove reliable spark-free operation with a minimum dark current. In the second phase, electrodes with selected materials were installed in the 250 ns FWHM, 500 kV electron gun and tested for high gradient breakdown and for quantum efficiency using an ultra-violet laser.

  8. Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

    Institute of Scientific and Technical Information of China (English)

    Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

    2012-01-01

    We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer,which leads to a higher potential barrier at the backside of the twodimensional electron gas channel and better carrier confinement.This,remarkably,reduces the drain leakage current and improves the device breakdown voltage.The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (~ 100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (~50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate-drain distance of 1μm.The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm,a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz.

  9. A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

    Science.gov (United States)

    Jamali Mahabadi, S. E.; Rajabi, Saba; Loiacono, Julian

    2015-09-01

    In this paper a partial silicon on insulator (PSOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) with periodic buried oxide layer (PBO) for enhancing breakdown voltage (BV) and self-heating effects (SHEs) is proposed for the first time. This new structure is called periodic buried oxide partial silicon on insulator (PBO-PSOI). In this structure, periodic small pieces of SiO2 were used as the buried oxide (BOX) layer in PSOI to modulate the electric field in the structure. It was demonstrated that the electric field is distributed more evenly by producing additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the PBO-PSOI structure. Hence, the area underneath the electric field curve increases which leads to higher breakdown voltage. Also a p-type Si window was introduced in the source side to force the substrate to share the vertical voltage drop, leading to a higher vertical BV. Furthermore, the Si window under the source and those between periodic pieces of SiO2 create parallel conduction paths between the active layer and substrate thereby alleviating the SHEs. Simulations with the two dimensional ATLAS device simulator from the Silvaco suite of simulation tools show that the BV of PBO-PSOI is 100% higher than that of the conventional partial SOI (C-PSOI) structure. Furthermore the PBO-PSOI structure alleviates SHEs to a greater extent than its C-PSOI counterpart. The achieved drain current for the PBO-PSOI structure (100 μA), at drain-source voltage of VDS = 100 V and gate-source voltage of VGS = 25 V, is shown to be significantly larger than that in C-PSOI and fully depleted SOI (FD-SOI) structures (87 μA and 51 μA respectively). Drain current can be further improved at the expense of BV by increasing the doping of the drift region.

  10. Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

    Science.gov (United States)

    Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

    2016-12-01

    Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

  11. Effects of Thermal and Solvent Aging on Breakdown Voltage of TPE, PBT/PET Alloy, and PBT Insulated Low Voltage Electric Wire

    Directory of Open Access Journals (Sweden)

    Eun-Soo Park

    2013-01-01

    Full Text Available Tests were performed to evaluate the effects of thermal and solvent aging on the mechanical and dielectric breakdown properties of four types of polyester resins, namely, the insulation layer of poly(butylene terephthalat (PBT- based thermoplastic elastomer (TPE, TPE1, poly(butylene 2,6-naphthalate-based TPE (TPE2, PBT/poly(ethylene terephthalate alloy (Alloy, and PBT extruded onto a copper conductor of low voltage electric wire. The tensile specimens used in this series were prepared from the same extruded resins. The prepared electric wires and tensile specimens were thermally aged in air and in toluene, xylene, TCB, and NMP. When Alloy and PBT were thermally aged in toluene, xylene and TCB at 120°C for 6 h, the tensile properties were significantly decreased compared to TPE1 and TPE2 at the same condition. The reduction of elongation at break of Alloy was more discernible than that of PBT. This result indicated that Alloy is more affected by thermal and solvent ageing. Among them, TPE2 showed the highest breakdown voltage (BDV, and it has also the highest BDV after thermal and solvent aging.

  12. A Test Study of 50% Lightning Impulse Breakdown Voltage on Rod-Plane Gap with Two-Phase Mixture of Gas and Solid Particles

    Science.gov (United States)

    He, Zhenghao; Xu, Huaili; Bai, Jing; Yu, Fusheng; Hu, Feng; Li, Jin

    2007-12-01

    A test study on 50% lightning impulse breakdown voltage in two-phase mixture of gas and solid particles has been carried out in a specially designed discharge cabinet. A mechanical sieve is set up for sifting different solid particles into the discharge space uniformly. The lightning impulse voltage according with international electro-technical commission (IEC) standard is applied to the electrodes inside the discharge cabinet by the rule of up-down method in a total of 40 times. The results showed that the 50% lightning impulse breakdown voltage in two-phase mixture of gas and solid particles has its own features and is much different from that in air.

  13. Voltage-stabilised elastomers with increased relative permittivity and high electrical breakdown strength by means of phase separating binary copolymer blends of silicone elastomers

    DEFF Research Database (Denmark)

    A Razak, Aliff Hisyam; Yu, Liyun; Skov, Anne Ladegaard

    2017-01-01

    Increased electrical breakdown strength and increased dielectric permittivity of silicone-based dielectric elastomers are achieved by means of the addition of so-called voltage-stabilisers prepared from PDMS–PPMS copolymers as well as PDMS–PEG copolymers in order to compensate for the negative...... effect of softness on electrical stability of silicone elastomers. The voltage-stabilised elastomer, incorporating a high-permittivity PDMS–PEG copolymer, possesses increased relative permittivity, high electrical breakdown strength, excellent network integrity and low dielectric loss and paves the way...... towards specialised silicone elastomers for dielectric elastomer transducer products with inherent softness and electrical stability, and thus increased actuation at a given voltage....

  14. Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect

    Institute of Scientific and Technical Information of China (English)

    Zheng Zhi; Li Wei; Li Ping

    2013-01-01

    A non-depletion floating layer silicon-on-insulator (NFL SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) is proposed and the NFL-assisted modulated field (NFLAMF) principle is investigated in this paper.Based on this principle,the floating layer can pin the potential for modulating bulk field.In particular,the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer (BOX).At variation of back-gate bias,the shielding charges of NFL can alsoeliminate back-gate effects.The simulated results indicate that the breakdown voltage (BV) is increased from 315 V to 558 V compared to the conventional reduced surface field (RESURF) SOI (CSOI) LDMOS,yielding a 77% improvement.Furthermore,due to the field shielding effect of the NFL,the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device.

  15. High-Voltage Breakdown Penalties for the Beam-Breakup Instability

    Energy Technology Data Exchange (ETDEWEB)

    Ekdahl, Carl August [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-11-22

    The strength of the dangerous beam breakup (BBU) instability in linear induction accelerators (LIAs) is determined by the transverse coupling impedance Z of the induction cell cavity. For accelerating gap width w less than the beam pipe radius b, the transverse impedance is theoretically proportional to w/b, favoring narrow gaps to suppress BBU. On the other hand, cells with narrow gaps cannot support high accelerating gradients, because of electrical breakdown and shorting of the gap. Thus, there is an engineering trade-off between BBU growth and accelerating gradient, which must be considered for next generation LIAs now being designed. In this article this tradeoff is explored, using a simple pillbox cavity as an illustrative example. For this model, widening the gap to reduce the probability of breakdown increases BBU growth, unless higher magnetic focusing fields are used to further suppress the instability.

  16. Fabrication and characterization of nanometer thin films for low-voltage DEAs

    OpenAIRE

    2016-01-01

    Nanometer-thin films are the essential components of a low-voltage dielectric elastomer actuator (DEA). Comprising of two electrodes sandwiching a dielectric elastomeric material DEAs have evoked versatile materials research. Before choosing the materials used to manufacture low-voltage DEAs one should carefully consider the targeted application. This project aims at finding new techniques to realize nanometer-thin films to obtain low-voltage DEAs with possible future application as artificia...

  17. Theoretical analysis and design of double implanted MOSFET on 6H silicon carbide wafer for low power dissipation and large breakdown voltage

    Directory of Open Access Journals (Sweden)

    Munish Vashishath

    2008-05-01

    Full Text Available This paper analyses the device structure of a 6H-SiC vertical double-implanted MOSFET (DIMOSFET in order to provide a high breakdown voltage of about 10 kV and a low power dissipation for a rise in device temperature of 600 oC. Analysis of an 800 W power dissipation for stable device operation corresponding to this temperature rise shows optimum doping levels of the drift region lying between 5*1013 cm-3 and 5*1015 cm-3 for a breakdown voltage of 10 kV.

  18. Optimizing Design of Breakdown Voltage to Eliminate Back Gate Bias Effect in Silicon-on-Insulator Diode Using Low Doping Buried Layer

    Institute of Scientific and Technical Information of China (English)

    H0 Chi-Hon; LIAO Chen-Nan; CHIEN Feng-Tso; TSAI Yao-Tsung

    2009-01-01

    This work presents the optimal design of a silicon-on-insulator (SOI) diode structure to eliminate the back gate bias effect and to improve breakdown voltage. The SOI structure is characterized by inserting a silicon low doping buried layer (LDBL) between the silicon layer and the buried oxide layer. The LDBL thickness is a key parameter that affects the strong inversion condition of the back MOS capacitor of the new SOI diode. The optimal LDBL thickness in the SOI diode is 2.65μm. The LDBL shielding layer improved the breakdown voltage.

  19. Investigations of the electrical breakdown properties of insulator materials used in high voltage vacuum diodes

    Energy Technology Data Exchange (ETDEWEB)

    Shurter, R.P.; Carlson, R.L.; Melton, J.G.

    1993-08-01

    The Injector for the proposed Dual-Axis Radiographic Hydrodynamic Testing (DARHT) Facility at Los Alamos utilizes a monolithic insulator deployed in a radial configuration. The 1.83-m-diam {times} 25.4-cm-thick insulator with embedded grading rings separates the output oil transmission line from the vacuum vessel that contains the re-entrant anode and cathode assemblies. Although much work has been done by the pulse power community in studying surface flash-over of insulating materials used in both axial and radial configurations, dendrite growth at the roots of grading rings embedded in materials suitable for very large insulators is less well characterized. Degradation of several acrylic insulators has been observed in the form of dendrites growing at the roots of the grading rings for large numbers (100`s) of pulses on the prototype DARHT Injector and other machines using similar radial geometries. In a few cases, these dendrites have led to catastrophic bulk breakdown of the acrylic between two grading rings making the insulator a costly loss. Insulating materials under investigation are acrylic (Lucite), epoxy (Furane), and cross-linked polystyrene (Rexolite); each of these materials has its own particular mechanical and electrical merits. All of these materials have been cast and machined into the required large size for the Injector. Test methods and the results of investigations into the breakdown strength of various interface geometries and the susceptibility of these materials to dendrite growth are reported.

  20. Determination of breakdown voltage of In 0.53Ga 0.47As/InP single photon avalanche diodes

    Institute of Scientific and Technical Information of China (English)

    Peng Zhou; Changjun Liao; Zhengjun Wei; Chunfei Li; Shuqiong Yuan

    2011-01-01

    @@ We examine the saturation of relative current gain of In0.53Ga0.47 As/InP single photon avalanche diodes (SPADs) operated in Geiger mode. The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method. The analysis method is temperature-independent and can be applied to most SPADs.%We examine the saturation of relative current gain of In0.53Ga0.47As/InP single photon avalanche diodes (SPADs) operated in Geiger mode. The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method. The analysis method is temperature-independent and can be applied to most SPADs.

  1. A NEW STRUCTURE AND ITS ANALYTICAL BREAKDOWN MODEL OF HIGH VOLTAGE SOI DEVICE WITH STEP UNMOVABLE SURFACE CHARGES OF BURIED OXIDE LAYER

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A new SOI (Silicon On Insulator) high voltage device with Step Unmovable Surface Charges(SUSC) of buried oxide layer and its analytical breakdown model are proposed in the paper. The unmovable charges are implemented into the upper surface of buried oxide layer to increase the vertical electric field and uniform the lateral one. The 2-D Poisson's equation is solved to demonstrate the modulation effect of the immobile interface charges and analyze the electric field and breakdown voltage with the various geometric parameters and step numbers. A new RESURF (REduce SURface Field) condition of the SOI device considering the interface charges and buried oxide is derived to maximize breakdown voltage. The analytical results are in good agreement with the numerical analysis obtained by the 2-D semiconductor devices simulator MEDICI. As a result, an 1200V breakdown voltage is firstly obtained in 3μm-thick top Si layer, 2μm-thick buried oxide layer and 70μm-length drift region using a linear doping profile of unmovable buried oxide charges.

  2. DC conduction and breakdown characteristics of Al2O3/cross-linked polyethylene nanocomposites for high voltage direct current transmission cable insulation

    Science.gov (United States)

    Park, Yong-Jun; Kwon, Jung-Hun; Sim, Jae-Yong; Hwang, Ju-Na; Seo, Cheong-Won; Kim, Ji-Ho; Lim, Kee-Joe

    2014-08-01

    We have discussed a cross-linked polyethylene (XLPE) nanocomposite insulating material that is able to DC voltage applications. Nanocomposites, which are composed in polymer matrix mixed with nano-fillers, have received considerable attention because of their potential benefits as dielectrics. The nano-sized alumina oxide (Al2O3)/XLPE nanocomposite was prepared, and three kinds of test, such as DC breakdown, DC polarity reversal breakdown, and volume resistivity were performed. By the addition of nano-sized Al2O3 filler, both the DC breakdown strength and the volume resistivity of XLPE were increased. A little homogeneous space charge was observed in Al2O3/XLPE nanocomposite material in the vicinity of electrode through the polarity reversal breakdown test. From these results, it is thought that the addition of Al2O3 nano-filler is effective for the improvement of DC electrical insulating properties of XLPE.

  3. Upper drift region double step partial SOI LDMOSFET: A novel device for enhancing breakdown voltage and output characteristics

    Science.gov (United States)

    Jamali Mahabadi, S. E.

    2016-01-01

    A new LDMOSFET structure called upper drift region double step partial silicon on insulator (UDDS-PSOI) is proposed to enhance the breakdown voltage (BV) and output characteristics. The proposed structure contains two vertical steps in the top surface of the drift region. It is demonstrated that in the proposed structure, the lateral electric field distribution is modified by producing two additional electric field peaks, which decrease the common peaks near the drain and gate junctions. The electric field distribution in the drift region is modulated and that of the buried layer is enhanced by the two steps in the top surface of the drift region, thereby resulting in the enhancement of the BV. The effect of device parameters, such as the step height and length in the top surface of the drift region, the doping concentration in the drift region, and the buried oxide length and thickness, on the electric field distribution and the BV of the proposed structure is studied. Simulation results from two-dimensional ATLAS simulator show that the BV of the UDDS-PSOI structure is 120% and 220% higher than that of conventional partial SOI (C-PSOI) and conventional SOI (C-SOI) structures, respectively. Furthermore, the drain current of the UDDS-PSOI is 11% larger than the C-PSOI structure with a drain-source voltage VDS = 100 V and gate-source voltage VGS = 5 V. Simulation results show that Ron in the proposed structure is 74% and 48% of that in C-PSOI and C-SOI structures, respectively.

  4. An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage

    Institute of Scientific and Technical Information of China (English)

    Xie Gang; Edward Xu; Niloufar Hashemi; Zhang Bo; Fred Y. Fu; Wai Tung Ng

    2012-01-01

    A reduced surface electric field in an AlGaN/GaN high electron mobility transistor (HEMT) is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas (2-DEG) channel as an electric field shaping layer.The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions.Compared with the HEMTs with conventional sourceconnected field plates and double field plates,the HEMT with a Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge.By optimizing both the length of Mg-doped layer,Lm,and the doping concentration,a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure,respectively.In a device with VGS =-5 V,Lm =1.5 μm,a peak Mg doping concentration of 8×1017 cm-3 and a drift region length of 10 μm,the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.

  5. A Test Study of 50% Lightning Impulse Breakdown Voltage on Rod-Plane Gap with Two-Phase Mixture of Gas and Solid Particles

    Institute of Scientific and Technical Information of China (English)

    HE Zheng-hao; XU Huai-li; BAI Jing; YU Fu-sheng; HU Feng; LI Jin

    2007-01-01

    A test study on 50% lightning impulse breakdown voltage in two-phase mixture of gas and solid particles has been carried out in a specially designed discharge cabinet.A mechanical sieve is set up for sifting different solid particles into the discharge space uniformly.The lightning impulse voltage according with international electro-technical commission (IEC) standard is applied to the electrodes inside the discharge cabinet by the rule of up-down method in a total of 40 times.The results showed that the 50% lightning impulse breakdown voltage in two-phase mixture of gas and solid particles has its own features and is much different from that in air.

  6. A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT

    Science.gov (United States)

    Fu, Qiang; Zhang, Wan-Rong; Jin, Dong-Yue; Zhao, Yan-Xiao; Wang, Xiao

    2016-12-01

    The product of the cutoff frequency and breakdown voltage (fT×BVCEO) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N+-buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of fT×BVCEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness (TBOX) on fT, BVCEO, and the FOM of fT×BVCEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces fT, slightly increases BVCEO to some extent, but ultimately degrades the FOM of fT×BVCEO. Although the fT, BVCEO, and the FOM of fT×BVCEO can be improved by increasing SOI insulator SiO2 layer thickness TBOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick TBOX, a thin N+-buried layer is introduced into collector region to not only improve the FOM of fT×BVCEO, but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N+-buried layer in collector region is investigated in detail. The result show that the FOM of fT×BVCEO is improved and the device temperature decreases as the N+-buried layer shifts toward SOI substrate insulation layer. The approach to introducing a thin N+-buried layer

  7. Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices

    Science.gov (United States)

    Nastasi, Michael Anthony; Wang, Yongqiang; Fraboni, Beatrice; Cosseddu, Piero; Bonfiglio, Annalisa

    2013-06-11

    Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

  8. High-voltage thin-absorber photovoltaic device structures for efficient energy harvesting

    Science.gov (United States)

    Welser, Roger E.; Pethuraja, Gopal G.; Zeller, John W.; Sood, Ashok K.; Sablon, Kimberly A.; Dhar, Nibir K.

    2014-06-01

    Efficient photovoltaic energy harvesting requires device structures capable of absorbing a wide spectrum of incident radiation and extracting the photogenerated carriers at high voltages. In this paper, we review the impact of active layer thickness on the voltage performance of GaAs-based photovoltaic device structures. We observe that thin absorber structures can be leveraged to increase the operating voltage of energy harvesting devices. Thin absorbers in combination with advanced light trapping structures provide an exciting pathway for enhancing the performance of flexible, lightweight photovoltaic modules suitable for mobile and portable power applications.

  9. Reliable and Low-Voltage Electrowetting on Thin Parylene Films

    NARCIS (Netherlands)

    Dhindsa, M.S.; Kuiper, S.; Kumar, R.; Heikenfeld, J.

    2011-01-01

    The stability of an electrowetting system is dependent upon the choice of liquids, the dielectric material and the operating voltage.Substantial progress is reported herein on use of 300 nm thick poly-tetrafluoro-para-xylylene) (Parylene HT) films for almost 100° of reliable electrowetting modulat

  10. Dual trench AlGaN/GaN HEMT on SiC substrate: A novel device to improve the breakdown voltage and high power performance

    Science.gov (United States)

    Ghaffari, Majid; Orouji, Ali A.

    2016-06-01

    In this paper, an excellent performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with a dual trench technique (DT-HEMT) is proposed. In the proposed technique, the dual trench between the buffer layer and the nucleation layer is created. Both the trenches are made of Gallium Nitride. A trench is created under the source region to increase the breakdown voltage. In addition, the drain current will improve due to a created trench in below the gate region. The DC and RF characteristics of the DT-HEMT are investigated. Also, the characteristics of the proposed structure compared with the characteristics of a conventional structure (C-HEMT). Our results indicate that the dual trench technique has excellent impacts on the device characteristics, especially on the drain current, breakdown voltage, and maximum output power density. The breakdown voltage, drain current, and maximum power density of DT-HEMT structure improve 56 %, 52 %, and 310 % in comparison with the C-HEMT, respectively. Also, using the dual trench technique, the maximum oscillation frequency, maximum available gain, short channel effect, maximum DC transconductance, and output resistance of the DT-HEMT structure will increase. Therefore, the proposed HEMT structure shows outstanding electrical properties compared to similar devices are based on conventional structures.

  11. A study on threshold voltage stability of low operating voltage organic thin-film transistors

    Science.gov (United States)

    Padma, N.; Sen, Shaswati; Sawant, Shilpa N.; Tokas, R.

    2013-08-01

    A low operating voltage (<2 V) organic field-effect transistor (OFET) using phenylhexyltrichlorosilane (PTS) self-assembled monolayer (SAM) dielectric and copper phthalocyanine (CuPc) as semiconductor with improved mobility (0.035 cm2 V-1 s-1) and threshold voltage stability was demonstrated. This device showed better performance when compared to an OFET with octyltrichlorosilane (OTS-8) SAM dielectric. The improved mobility was attributed to the 2D growth mode of CuPc on PTS SAM because of surface energy matching between the two, whereas CuPc film on OTS-8 showed a 3D growth mode with larger grain boundary density. The higher threshold voltage stability of OFETs on PTS SAM was attributed to the efficient coverage and screening of trap centres at dielectric/semiconductor interface due to stronger intermolecular linking and formation of closely packed surface by the bulky phenyl end groups. Decrease in grain boundaries offered by 2D growth of CuPc for electron and hole trapping was also found to be another reason for improved threshold voltage stability. The results indicated that the nature of the end group of SAM dielectric, surface chemistry of dielectric and initial growth mode of semiconductors are all responsible for improvement in threshold voltage stability and enhanced performance of OFET.

  12. Influence of Parasitic Capacitance on Output Voltage for Series-Connected Thin-Film Piezoelectric Devices

    Directory of Open Access Journals (Sweden)

    Kensuke Kanda

    2012-12-01

    Full Text Available Series-connected thin film piezoelectric elements can generate large output voltages. The output voltage ideally is proportional to the number of connections. However, parasitic capacitances formed by the insulation layers and derived from peripheral circuitry degrade the output voltage. Conventional circuit models are not suitable for predicting the influence of the parasitic capacitance. Therefore we proposed the simplest model of piezoelectric elements to perform simulation program with integrated circuit emphasis (SPICE circuit simulations. The effects of the parasitic capacitances on the thin-film Pb(Zr, TiO3, (PZT elements connected in series on a SiO2 insulator are demonstrated. The results reveal the negative effect on the output voltage caused by the parasitic capacitances of the insulation layers. The design guidelines for the devices using series-connected piezoelectric elements are explained.

  13. The Dielectric Breakdown Model applied to explain various morphologies of deposited metallic structures in thin gap metal electro-deposition

    Directory of Open Access Journals (Sweden)

    Aditya Chowdhury

    2015-06-01

    Full Text Available The phenomenon of metal electro-deposition in thin-gap geometry leads to very interesting and diverse two dimensional morphologies. This varies from dense ramified growth to thin dendritic projections. In this paper, we have proposed a stochastic model that incorporates such diversity. We carried out thin-gap electro-deposition of Copper and Zinc with varying electrolytic concentrations. A well known model, that until this work was used to explain dielectric breakdown patterns, was employed to explain the variation in deposition morphology with concentration. The sole parameter in the model was varied and the numerically obtained patterns was seen to correlate well with those obtained from electro-deposition. A linear relationship between the parameter and molar concentration was established. The established relationship was then analysed and interpreted.

  14. Studying the Dynamics of Breakdown of Thin Horizontal Liquid Layers with Local Heating

    Directory of Open Access Journals (Sweden)

    Spesivtsev Serafim

    2016-01-01

    Full Text Available Experimental study of liquid layers breakdown when heated locally from the substrate side was made. Water and ethanol were used as working liquids with a layer thickness of 300 μm. Basic steps of the breakdown process were found and mean velocities of the dry spot formation were determined; the values are 0.06 mm/sec for ethanol and 5.15 mm/sec for water. The formation of residual layer over the hot-spot before the breakdown has been found for both liquids. The creation of a droplet cluster near the heating region is observed when using water as a working fluid. It was shown that evaporation is one of the general factors influencing the process of layer breakdown and dry spot formation as well as thermocapillary effect.

  15. Elemental analysis of powders with surface-assisted thin film laser-induced breakdown spectroscopy

    Science.gov (United States)

    Tian, Ye; Cheung, Hoi Ching; Zheng, Ronger; Ma, Qianli; Chen, Yanping; Delepine-Gilon, Nicole; Yu, Jin

    2016-10-01

    We have developed in this work a method of elemental analysis of powdered materials with laser-induced breakdown spectroscopy (LIBS). This method requires simple sample preparation. Powders are first mixed into a 75 cSt base oil to obtain a paste which is then smeared onto the polished surface of a solid state substrate, aluminum plate for instance, in the form of a uniform thin film. The prepared sample is ablated by a high energy infrared (IR at 1064 nm) nanosecond laser pulse. The laser beam transmits through the coating layer of the material to be analyzed and induces a strong plasma from the substrate. The initial plasma interacts in turn with the coating layer, leading to the vaporization and excitation of the incorporated powder particles. The subsequent emission from the plasma includes emission lines of the elements contained in the powder, which is preferentially captured by a suitable detection system. The analysis of the recorded spectrum allows the concentration determination of the targeted elements in the powder. We first applied the method on a cellulose powder of 20 μm typical particle size. The powder was spiked with titanium dioxide (TiO2) nanoparticles for Ti concentrations ranging from 25 ppm to 5000 ppm by weight. Calibration graphs were thus built to deduce figures-of-merit parameters such as the coefficient of determination (R2) and the limits of detection and quantification (LoD and LoQ). We optimized especially the choice of reference line for spectrum normalization, which resulted in better analytical performances. In the second step, two sets of powders, the aforementioned cellulose powder and an alumina powder with average particle size of ≤ 10 μm, were spiked with TiO2 nanoparticles. We then assessed the matrix effect between these two different powders for the determination of Ti by comparing their calibration curves. Our results show universal calibration curve in Ti determination in the two tested matrices. The results are

  16. Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.

    Science.gov (United States)

    Liu, Ao; Liu, Guo Xia; Zhu, Hui Hui; Xu, Feng; Fortunato, Elvira; Martins, Rodrigo; Shan, Fu Kai

    2014-10-22

    We reported here "aqueous-route" fabrication of In2O3 thin-film transistors (TFTs) using an ultrathin solution-processed ZrOx dielectric thin film. The formation and properties of In2O3 thin films under various annealing temperatures were intensively examined by thermogravimetric analysis, Fourier transform infrared spectroscopy, and atomic force microscopy. The solution-processed ZrOx thin film followed by sequential UV/ozone treatment and low-temperature thermal-annealing processes showed an amorphous structure, a low leakage-current density (∼1 × 10(-9) A/cm(2) at 2 MV/cm), and a high breakdown electric field (∼7.2 MV/cm). On the basis of its implementation as the gate insulator, the In2O3 TFTs based on ZrOx annealed at 250 °C exhibit an on/off current ratio larger than 10(7), a field-effect mobility of 23.6 cm(2)/V·s, a subthreshold swing of 90 mV/decade, a threshold voltage of 0.13 V, and high stability. These promising properties were obtained at a low operating voltage of 1.5 V. These results suggest that "aqueous-route" In2O3 TFTs based on a solution-processed ZrOx dielectric could potentially be used for low-cost, low-temperature-processing, high-performance, and flexible devices.

  17. Organic nanodielectrics for low voltage carbon nanotube thin film transistors and complementary logic gates.

    Science.gov (United States)

    Hur, Seung-Hyun; Yoon, Myung-Han; Gaur, Anshu; Shim, Moonsub; Facchetti, Antonio; Marks, Tobin J; Rogers, John A

    2005-10-12

    We report the implementation of three dimensionally cross-linked, organic nanodielectric multilayers as ultrathin gate dielectrics for a type of thin film transistor device that uses networks of single-walled carbon nanotubes as effective semiconductor thin films. Unipolar n- and p-channel devices are demonstrated by use of polymer coatings to control the behavior of the networks. Monolithically integrating these devices yields complementary logic gates. The organic multilayers provide exceptionally good gate dielectrics for these systems and allow for low voltage, low hysteresis operation. The excellent performance characteristics suggest that organic dielectrics of this general type could provide a promising path to SWNT-based thin film electronics.

  18. Current-voltage relation for thin tunnel barriers: Parabolic barrier model

    DEFF Research Database (Denmark)

    Hansen, Kim; Brandbyge, Mads

    2004-01-01

    We derive a simple analytic result for the current-voltage curve for tunneling of electrons through a thin uniform insulating layer modeled by a parabolic barrier. Our model, which goes beyond the Wentzel–Kramers–Brillouin approximation, is applicable also in the limit of highly transparant barri...

  19. Physics-Based Compact Model for CIGS and CdTe Solar Cells: From Voltage-Dependent Carrier Collection to Light-Enhanced Reverse Breakdown: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Xingshu; Alam, Muhammad Ashraful; Raguse, John; Garris, Rebekah; Deline, Chris; Silverman, Timothy

    2015-10-15

    In this paper, we develop a physics-based compact model for copper indium gallium diselenide (CIGS) and cadmium telluride (CdTe) heterojunction solar cells that attributes the failure of superposition to voltage-dependent carrier collection in the absorber layer, and interprets light-enhanced reverse breakdown as a consequence of tunneling-assisted Poole-Frenkel conduction. The temperature dependence of the model is validated against both simulation and experimental data for the entire range of bias conditions. The model can be used to characterize device parameters, optimize new designs, and most importantly, predict performance and reliability of solar panels including the effects of self-heating and reverse breakdown due to partial-shading degradation.

  20. Design and experiment of 4H-SiC JBS diodes achieving a near-theoretical breakdown voltage with non-uniform floating limiting rings terminal

    Science.gov (United States)

    Yuan, Hao; Song, Qingwen; Tang, Xiaoyan; Zhang, Yimeng; Zhang, Yimen; Zhang, Yuming

    2016-09-01

    In this paper, a 4H-SiC Junction Barrier Schottky diode (JBS) with non-uniform floating limiting rings (FLRs) has been investigated and fabricated using n type 4H-SiC epitaxial layer with thickness of 31 μm and doping concentration of 3.3 × 1015 cm-3. According to the simulated results, the key parameters of a FLRs design to achieve a high voltage are the minimum space between two adjacent doped rings, spacing growth step and number of rings. The experimental results also show a great agreement with simulated results. Meanwhile, a near-ideal breakdown voltage of 3.7 kV was achieved, which yield around 95% of the parallel-plane breakdown voltage. The forward characteristics show that the fabricated JBS diodes have a forward current density of 210 A/cm2 at 3 V and a specific on-resistance (Rsp-on) of 7.58 mΩ cm2. Different FLRs parameters have no effect on the forward device performance.

  1. The breakdown mechanism of a high-side pLDMOS based on a thin-layer silicon-on-insulator structure

    Institute of Scientific and Technical Information of China (English)

    Zhao Yuan-Yuan; Qiao Ming; Wang Wei-Bin; Wang Meng; Zhang Bo

    2012-01-01

    A high-side thin-layer silicon-on-insulator (SOI) pLDMOS is proposed,adopting field implant (FI) and multiple field plate (MFP) technologies.The breakdown mechanisms of back gate (BG) turn-on,surface channel punch-through,and vertical and lateral avalanche breakdown are investigated by setting up analytical models,simulating related parameters and verifying experimentally.The device structure is optimized based on the above research.The shallow junction achieved through FI technology attenuates the BG effect,the optimized channel length eliminates the surface channel punch-through,the advised thickness of the buried oxide dispels the vertical avalanche breakdown,and the MFP technology avoids premature lateral avalanche breakdown by modulating the electric field distribution.Finally,for the first time,a 300 V high-side pLDMOS is experimentally realized on a 1.5 μm thick thin-layer SOI.

  2. 具有浮空埋层的高压器件新结构和击穿电压模型%A New High Voltage Device with Floating Buried Layer and the Model of Breakdown Voltage

    Institute of Scientific and Technical Information of China (English)

    李琦; 张扬; 段吉海

    2011-01-01

    提出具有浮空埋层的变掺杂高压器件新结构(BVLD:Variation in lateral doping with floating buriedlayer),建立其击穿电压模型.线性变掺杂漂移区的电场耦合作用使表面电场达到近似理想的均匀分布,n+浮空等电位层与衬底形成新平行平面结,使得纵向电压由常规结构的一个pn结承受转变为两个串联pn结分担,改善了器件的击穿特性;建立二维的击穿电压模型,获得器件结构参数间的优化关系.结果表明:与常规LDMOS相比,BVLD结构的击穿电压提高94%.%A novel high voltage device with variation in lateral doping and floating buried layer (BVLD) is proposed, and a model of breakdown voltage is developed. The surface electric field reaches nearly ideal uniform distribution due to electric field modulation of variation in lateral doping. A new parallel-plane junction is formed between n+ floating buried layer and substrate,which can support more biases by series of two pn junctions. Based on the 2-D model of breakdown voltage, the quantified optimal relation between the structure parameters is also obtained.The results indicate that the breakdown voltage of BVLD device is increased by 94% in comparison to conventional LDMOS.

  3. Target voltage behaviour of a vanadium-oxide thin film during reactive magnetron sputtering

    Institute of Scientific and Technical Information of China (English)

    Wang Tao; Jiang Ya-Dong; Yu He; Wu Zhi-Ming; Zhao He-Nan

    2011-01-01

    This paper simulates reactive magnetron-sputtering in constant current mode in a Vanadium-O2/Ar system equipped with a DC power supply by adopting both kinetics model and Berg's model. The target voltage during the reactive sputtering has been investigated as a function of reactive gas flow. Both experiments and simulations demonstrate a hysteresis curve with respect to the oxygen supply. The time-dependent variation of the target mode is studied by measuring the target voltage for various reactive oxygen gas flows and pre-sputtering times. The presputtering time increases with the increased initial target voltage. Furthermore, a corresponding time-dependent model simulating target voltage changes is also proposed. Based on these simulations, we find some relationships between the discharge voltage behaviour and the properties of the formed oxide. In this way, a better understanding of the target voltage changes during reactive sputtering can be achieved. We conclude that the presented theoretical models for parameter-dependent case and time-dependent case are in qualitative agreement with the experimental results and can be used to comprehend the target voltage behaviour in the deposition of vanadium oxide thin films.

  4. Effect of spontaneous polarization change on current-voltage characteristics of thin ferroelectric films

    Science.gov (United States)

    Podgorny, Yu. V.; Lavrov, P. P.; Vorotilov, K. A.; Sigov, A. S.

    2015-03-01

    The role of a change in the spontaneous polarization charge in the formation of negative differential conductance regions of the current-voltage characteristics of thin ferroelectric films has been determined. It has been shown that the polarization recovery current, which appears due to partial depolarization of a preliminarily polarized film, prevails over the intrinsic leakage current of the ferroelectric film in the coercive field region and corresponds to the Weibull distribution. The influence of polarization recovery current decreases with decreasing voltage sweep rate.

  5. Sigma-pi molecular dielectric multilayers for low-voltage organic thin-film transistors.

    Science.gov (United States)

    Yoon, Myung-Han; Facchetti, Antonio; Marks, Tobin J

    2005-03-29

    Very thin (2.3-5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor structures to achieve sub-1-V operating characteristics. These new dielectrics are fabricated by means of layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well defined, strongly adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (up to approximately 2,500 nF.cm(-2)), excellent insulating properties (leakage current densities as low as 10(-9) A.cm(-2)), and single-layer dielectric constant (k)of approximately 16. These 3D self-assembled multilayers enable organic thin-film transistor function at very low source-drain, gate, and threshold voltages (organic semiconductors.

  6. Experimental studies on the power-frequency breakdown voltage of CF3I/N2/CO2 gas mixture

    Science.gov (United States)

    Zhang, Xiaoxing; Tian, Shuangshuang; Xiao, Song; Li, Yi; Deng, Zaitao; Tang, Ju

    2017-03-01

    Trifluoroiodomethane is a promising alternative to SF6 because of its good insulation properties and much less serious greenhouse effect than SF6. Previous studies have shown that the insulation performance of CF3I mixed with CO2 or N2 can equal that of SF6. This study explored the frequency breakdown characteristics of CF3I and SF6 mixed with two buffer gases. The effects of air pressure and field strength were analyzed. The fixed mixing ratio of CF3I and SF6 was 30% in the experiment. The breakdown experiment was conducted by changing the mixing ratio of CO2 and N2. Results showed that the CO2/N2 mixture ratio did not exert a synergetic effect, and the CF3I/CO2 breakdown performance was better than that of CF3I/N2 in the quasi-uniform and highly non-uniform electric fields. CO2 possibly provided the C atoms for the entire system to maintain a certain balance in C, and this balance inhibited the decomposition of CF3I. The breakdown performance of SF6/N2 was good in quasi-uniform field, whereas that of SF6/CO2 was good in the highly non-uniform field.

  7. Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD

    Institute of Scientific and Technical Information of China (English)

    LAU; KeiMay

    2010-01-01

    AlGaN/GaN high electron mobility transistors(HEMTs) were grown on Si substrates by MOCVD.In the HEMT structure,a 1 μm GaN buffer layer was partially doped with Mg in an attempt to increase the resistivity and minimize the buffer leakage.The AlGaN/GaN HEMTs grown on undoped and partially Mg-doped GaN buffer layers were processed and the DC characteristics of the devices were characterized for comparing the effect of Mg doping.For the device with the partially Mg-doped GaN buffer layer,a lower drain leakage current density of 55.8 nA/mm,a lower gate leakage current density of 2.73 μA/mm,and a higher off-state breakdown voltage of 104 V were achieved with device dimensions Lg/Wg/Lgs/Lgd=1/10/1/1 μm,better than the device with the undoped GaN buffer layer,which has a higher drain leakage current density of 9.2 μA/mm,a higher gate leakage current density of 91.8 μA/mm,and a lower off-state breakdown voltage of 87 V with the same device dimensions.

  8. Improving breakdown voltage and self-heating effect for SiC LDMOS with double L-shaped buried oxide layers

    Science.gov (United States)

    Bao, Meng-tian; Wang, Ying

    2017-02-01

    In this paper, a SiC LDMOS with double L-shaped buried oxide layers (DL-SiC LDMOS) is investigated and simulated. The DL-SiC LDMOS consists of two L-shaped buried oxide layers and two SiC windows. Using 2-D numerical simulation software, Atlas, Silvaco TCAD, the breakdown voltage, and the self-heating effect are discussed. The double-L shaped buried oxide layers and SiC windows in the active area can introduce an additional electric field peak and make the electric field distribution more uniform in the drift region. In addition, the SiC windows, which connect the active area to the substrate, can facilitate heat dissipation and reduce the maximum lattice temperature of the device. Compared with the BODS structure, the DL-SiC LDMOS and BODS structures have the same device parameters, except of the buried oxide layers. The simulation results of DL-SiC LDMOS exhibits outstanding characteristics including an increase of the breakdown voltage by 32.6% to 1220 V, and a low maximum lattice temperature (535 K) at room temperature.

  9. Long-living plasmoids generation by high-voltage discharge through thin conducting layers

    CERN Document Server

    Pirozerski, A L

    2006-01-01

    A new type of pulse high voltage electric discharge through a thin conducting layer on the surface of glass plate has been investigated. The afterglow plasma of this discharge forms quasi-spherical object with a lifetime about 0.2-0.3 s. Electric properties of the objects were studied by electric probe method. Measurements of plasma radiation spectra kinetics at visible and near ultraviolet spectral ranges have been carried out. Comparative analysis of the physical properties of the plasmoids appearing in this discharges and of ones generated via thin metal wires burning is given. Possible mechanism of the plasma metastability are discussed.

  10. Inner surface flash-over of insulator of low-inductance high-voltage self-breakdown gas switch and its application.

    Science.gov (United States)

    Zhang, Hong-Bo; Liu, Jin-liang

    2014-04-01

    In this paper, the inner surface flash-over of high-voltage self-breakdown switch, which is used as a main switch of pulse modulator, is analyzed in theory by employing the method of distributed element equivalent circuit. Moreover, the field distortion of the switch is simulated by using software. The results of theoretical analysis and simulation by software show that the inner surface flash-over usually starts at the junction points among the stainless steel, insulator, and insulation gas in the switch. A switch with improved structure is designed and fabricated according to the theoretical analysis and simulation results. Several methods to avoid inner surface flash-over are used to improve the structure of switch. In experiment, the inductance of the switch is no more than 100 nH, the working voltage of the switch is about 600 kV, and the output voltage and current of the accelerator is about 500 kV and 50 kA, respectively. And the zero-to-peak rise time of output voltage at matched load is less than 30 ns due to the small inductance of switch. The original switch was broken-down after dozens of experiments, and the improved switch has been worked more than 200 times stably.

  11. Persistent Hall voltages across thin planar charged quantum rings on the surface of a topological insulator

    Science.gov (United States)

    Durganandini, P.

    2015-03-01

    We consider thin planar charged quantum rings on the surface of a three dimensional topological insulator coated with a thin ferromagnetic layer. We show theoretically, that when the ring is threaded by a magnetic field, then, due to the Aharanov-Bohm effect, there are not only the well known circulating persistent currents in the ring but also oscillating persistent Hall voltages across the thin ring. Such oscillating persistent Hall voltages arise due to the topological magneto-electric effect associated with the axion electrodynamics exhibited by the surface electronic states of the three dimensional topological insulator when time reversal symmetry is broken. We further generalize to the case of dipole currents and show that analogous Hall dipole voltages arise. We also discuss the robustness of the effect and suggest possible experimental realizations in quantum rings made of semiconductor heterostructures. Such experiments could also provide new ways of observing the predicted topological magneto-electric effect in three dimensional topological insulators with time reversal symmetry breaking. I thank BCUD, Pune University, Pune for financial support through research grant.

  12. An easy way to measure accurately the direct magnetoelectric voltage coefficient of thin film devices

    Science.gov (United States)

    Poullain, Gilles; More-Chevalier, Joris; Cibert, Christophe; Bouregba, Rachid

    2017-01-01

    TbxDy1-xFe2/Pt/Pb(Zrx, Ti1-x)O3 thin films were grown on Pt/TiO2/SiO2/Si substrate by multi-target sputtering. The magnetoelectric voltage coefficient αΗΜΕ was determined at room temperature using a lock-in amplifier. By adding, in series in the circuit, a capacitor of the same value as that of the device under test, we were able to demonstrate that the magnetoelectric device behaves as a voltage source. Furthermore, a simple way to subtract the stray voltage arising from the flow of eddy currents in the measurement set-up, is proposed. This allows the easy and accurate determination of the true magnetoelectric voltage coefficient. A large αΗΜΕ of 8.3 V/cm. Oe was thus obtained for a Terfenol-D/Pt/PZT thin film device, without DC magnetic field nor mechanical resonance.

  13. On the difference between breakdown and quench voltages of argon plasma and its relation to $4p-4s$ atomic state transitions

    CERN Document Server

    Forati, Ebrahim; Sievenpiper, Dan

    2014-01-01

    Using a relaxation oscillator circuit, breakdown ($V_{\\mathrm{BD}}$) and quench ($V_{\\mathrm{Q}}$) voltages of a DC discharge microplasma between two needle probes are measured. High resolution modified Paschen curves are obtained for argon microplasmas including a quench voltage curve representing the voltage at which the plasma turns off. It is shown that, for a point to point microgap (e.g. the microgap between two needle probes) which describes many realistic microdevices, neither Paschen's law applies nor field emission is noticeable. Although normally $V_{\\mathrm{BD}}>V_{\\mathrm{Q}}$, it is observed that depending on environmental parameters of argon, such as pressure and the driving circuitry, plasma can exist in a different state with equal $V_{\\mathrm{BD}}$ and $V_{\\mathrm{Q}}$. Using emission line spectroscopy, it is shown that $V_{\\mathrm{BD}}$ and $V_{\\mathrm{Q}}$ are equal if the atomic excitation by the electric field dipole moment dominantly leads to one of the argon's metastable states ($4P_{5...

  14. On the difference between breakdown and quench voltages of argon plasma and its relation to 4p–4s atomic state transitions

    Energy Technology Data Exchange (ETDEWEB)

    Forati, Ebrahim, E-mail: forati@ieee.org; Piltan, Shiva; Sievenpiper, Dan, E-mail: dsievenpiper@ucsd.edu [University of California San Diego, La Jolla, California 92093 (United States)

    2015-02-02

    Using a relaxation oscillator circuit, breakdown (V{sub BD}) and quench (V{sub Q}) voltages of a DC discharge microplasma between two needle probes are measured. High resolution modified Paschen curves are obtained for argon microplasmas including a quench voltage curve representing the voltage at which the plasma turns off. It is shown that for a point to point microgap (e.g., the microgap between two needle probes) which describes many realistic microdevices, neither Paschen's law applies nor field emission is noticeable. Although normally V{sub BD} > V{sub Q,} it is observed that depending on environmental parameters of argon, such as pressure and the driving circuitry, plasma can exist in a different state with equal V{sub BD} and V{sub Q.} Using emission line spectroscopy, it is shown that V{sub BD} and V{sub Q} are equal if the atomic excitation by the electric field dipole moment dominantly leads to one of the argon's metastable states (4P{sub 5} in our study)

  15. High voltage research (breakdown strengths of gaseous and liquid insulators). Semiannual report, April 1--September 30, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Christophorou, L. G.; James, D. R.; Pai, R. Y.; Mathis, R. A.; Pace, M. O.; Bouldin, D. W.; Christodoulides, A. A.; Chan, C. C.

    1977-11-01

    Direct current breakdown strength measurements on a large number of multicomponent gas mixtures at low (approximately less than 1 atm) and high (approximately less than 5 atm) pressures led to the discovery of many gas mixtures of electron-attaching gases and strongly electron-attaching gases with N/sub 2/ and C/sub 3/F/sub 8/ which are superior to SF/sub 6/. Of special significance are mixtures containing C/sub 4/F/sub 6/ (perfluoro-2-butyne). The breakdown strength of one such mixture (20 percent C/sub 4/F/sub 6/ to 80 percent SF/sub 6/) is approximately 30 percent higher than pure SF/sub 6/ under identical conditions, both at low (approximately 0.7 atm) and high (4.6 atm) pressures. Perfluorocyclohexene (C/sub 6/F/sub 10/) and C/sub 5/F/sub 8/ (perfluorocyclopentene) were found at low pressure (approximately 0.2 atm) to be, respectively, approximately 2.1 and 2.2 times better than SF/sub 6/ under comparable conditions; they both have a potential as additives in gas mixtures. The effect of the inelastic electron scattering properties of a gas via negative ion resonances in the low-energy range (1 to approximately 4 eV) on the breakdown strength has been demonstrated for H/sub 2/, N/sub 2/, and CO and binary mixtures of these with SF/sub 6/ and C/sub 4/F/sub 6/ (perfluoro-2-butyne). The construction of a new high pressure (to approximately 11 atm), variable temperature (-50/sup 0/C to + 150/sup 0/C) apparatus has been completed and a practical test facility utilizing cylindrical electrode geometries has been put into operation; the first results on the latter apparatus were on SF/sub 6/-N/sub 2/ and c-C/sub 4/F/sub 8/--N/sub 2/ mixtures. Studies of environmental effects of dielectric gases via their electron-impact-induced decompositions and analysis of their breakdown products have begun using mass spectrometry and gas chromatography; C/sub 4/F/sub 6/ (perfluoro-2-butyne) seems to be resistant to electron-impact-induced decomposition indicating long

  16. Low voltage substrate current: a monitor for interface states generation in ultra-thin oxide n-MOSFETs under constant voltage stresses

    Institute of Scientific and Technical Information of China (English)

    Wang Yan-Gang; Xu Ming-Zhen; Tan Chang-Hua

    2007-01-01

    The low voltage substrate current (Ib) has been studied based on generation kinetics and used as a monitor of interface states (Nit) generation for ultra-thin oxide n-MOSFETs under constant voltage stress. It is found that the low voltage Ib is formed by electrons tunnelling through interface states, and the variations of Ib(△Ib) are proportional to variations of Nit (△Nit). The Nit energy distributions were determined by differentiating Nit(Vg). The results have been compared with that measured by using gate diode technique.

  17. Impact of metal overhang and guard ring techniques on breakdown voltage of Si strip sensors - 2003 IEEE nuclear science symposium, medical imaging conference, and workshop of room-temperature semiconductor detectors

    CERN Document Server

    Ranjan, K; Namrata, S; Chatterji, S; Srivastava-Ajay, K; Kumar, A; Jha, Manoj Kumar; Shivpuri, R K

    2004-01-01

    The importance of Si sensors in high-energy physics (HEP) experiments can hardly be overemphasized. However, the high luminosity and the high radiation level in the future HEP experiments, like Large Hadron Collider (LHC), has posed a serious challenge to the fabrication of Si detectors. For the safe operation over the full LHC lifetime, detectors are required to sustain very high voltage operation, well exceeding the bias voltage needed to full deplete the heavily irradiated Si sensors. Thus, the main effort in the development of Si sensors is concentrated on a design that avoids p-n junction breakdown at operational biases. Among various proposed techniques, Field-limiting Ring (FLR) (or guard ring) and Metal-Overhang (MO) are technologically simple and are suitable for vertical devices. Since high-voltage planar Si junctions are of great importance in the HEP experiments, it is very interesting to compare these two aforementioned techniques for achieving the maximum breakdown voltage under optimal conditio...

  18. Influence of bias voltage on structural and optical properties of TiNx thin films

    Science.gov (United States)

    Singh, Omveer; Dahiya, Raj P.; Malik, Hitendra K.; Kumar, Parmod

    2015-08-01

    In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H2 and N2 gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

  19. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-01-04

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  20. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-01-04

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

  1. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Science.gov (United States)

    Xue, JunShuai; Zhang, JinCheng; Hao, Yue

    2016-01-01

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm2/V s along with a sheet carrier density of 1.88 × 1013 cm-2 were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  2. Direct Observation of the Outermost Surfaces of Mesoporous Silica Thin Films by High Resolution Ultralow Voltage Scanning Electron Microscopy.

    Science.gov (United States)

    Kobayashi, Maho; Susuki, Kyoka; Otsuji, Haruo; Sakuda, Yusuke; Asahina, Shunsuke; Kikuchi, Naoki; Kanazawa, Toshiyuki; Kuroda, Yoshiyuki; Wada, Hiroaki; Shimojima, Atsushi; Kuroda, Kazuyuki

    2017-02-20

    The properties of the outermost surfaces of mesoporous silica thin films are critical in determining their functions. Obtaining information on the presence or absence of silica layers on the film surfaces and on the degree of mesopore opening is essential for applications of surface mesopores. In this study, the outermost surfaces of mesoporous silica thin films with 3-dimensional orthorhombic and 2-dimensional hexagonal structures were observed using ultralow voltage high resolution scanning electron microscopy (HR-SEM) with decelerating optics. SEM images of the surfaces before and after etching with NH4F were taken at various landing voltages. Comparing the images taken under different conditions indicated that the outermost surfaces of the nonetched mesoporous silica thin films are coated with a thin layer of silica. The images taken at an ultralow landing voltage (i.e., 80 V) showed that the presence or absence of surface silica layers depends on whether the film was etched with an aqueous solution of NH4F. The mesostructures of both the etched and nonetched films were visible in images taken at a conventional landing voltage (2 kV); hence, the ultralow landing voltage was more suitable for analyzing the outermost surfaces. The SEM observations provided detailed information about the surfaces of mesoporous silica thin films, such as the degree of pore opening and their homogeneities. AFM images of nonetched 2-dimensional hexagonal mesoporous silica thin films show that the shape of the silica layer on the surface of the films reflects the curvature of the top surface of the cylindrical mesochannels. SEM images taken at various landing voltages are discussed, with respect to the electron penetration range at each voltage. This study increases our understanding of the surfaces of mesoporous silica thin films, which may lead to potential applications utilizing the periodically arranged mesopores on these surfaces.

  3. Organic Semiconductors and Nanodielectrics for Flexible, Low Voltage Thin-Film Transistors

    Science.gov (United States)

    Marks, Tobin

    2006-03-01

    Molecular materials scientists are skilled at designing and constructing individual molecules with the goal of imbuing them with predetermined chemical and physical properties. However, the subsequent task of rationally assembling them into organized, functional supramolecular architectures with precise, nanometer-level control of bulk opt-electronic properties presents another level of challenge. In this lecture, synthetic and computational approaches to addressing such problems are described in which the ultimate goal is the fabrication of flexible electronic circuits employing unconventional materials classes and unconventional fabrication techniques. The issues here concern not only the rational design, realization, and understanding of high-mobility p- and n-type organic semiconductors, but also robust enabling nanoscopic gate dielectrics having ultra-high capacitance, low leakage, and high breakdown fields. In the former area, routes to and properties of, new high-mobility heterocyclic materials are described. These materials are then used to fabricate high-performance organic thin film transistors and CMOS circuits. In the latter topic, the design, synthesis, and characterization of new high-k nanoscopic gate dielectrics are described. It is then shown how these dielectrics can be employed to significantly enhance the performance of thin-film transistors and other devices fabricated from a wide variety of both organic as well as inorganic semiconductors.

  4. Voltage Control of Exchange Bias in a Chromium Oxide Based Thin Film Heterostructure

    Science.gov (United States)

    Echtenkamp, Will; Street, Mike; Mahmood, Ather; Binek, Christian

    Controlling magnetism by electrical means is a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Isothermal electric control of exchange bias has been achieved near room temperature using bulk, single crystal, magnetoelectric Cr2O3. In this study the electrically-controlled exchange bias is investigated in an all thin film Cr2O3/PdCo exchange bias heterosystem where an MBE grown ferromagnetic and perpendicular anisotropic Pd/Co multilayer has been deposited on a PLD grown (0001) Cr2O3 thin film. Prototype devices are fabricated using lithography techniques. Using a process of magnetoelectric annealing, voltage control of exchange bias in Cr2O3 heterostructures is demonstrated with significant implications for scalability of ultra-low power memory and logical devices. In addition, the dependence of the exchange bias on the applied electric and magnetic fields are independently studied at 300K and isothermal voltage-controlled switching is investigated. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC DMR-0820521.

  5. Numerical Modeling of Thermocapillary Deformation and Film Breakdown in a Locally Heated Thin Horizontal Volatile Liquid Layer

    Directory of Open Access Journals (Sweden)

    Barakhovskaya Ella

    2016-01-01

    Full Text Available The problem of thermocapillary deformation and film breakdown in a thin horizontal layer of viscous incompressible liquid with a free surface is considered. The deformable liquid layer is locally heated. The problem of thermocapillary deformation of the locally heated horizontal liquid layer has been solved numerically for two-dimensional unsteady case. The lubrication approximation theory is used. Capillary pressure, viscosity and gravity are taken into account. Evaporating rate is supposed to be proportional to the temperature difference between the liquid and ambient. Heat transfer in the substrate is also simulated. The numerical algorithm for the joint solution of the energy equation and the evolution equation for the thickness of liquid layer has been developed. The model predicts the thermocapillary deformation of the liquid surface and the formation of dry spots. The dynamics of liquid surface, the dry spots formation and the velocity of the contact line have been calculated. The deformation of the free surface has been calculated for different values of the heating power and thickness of the liquid layer. The effect of surface tension coefficient and wetting contact angle on the velocity of the contact line motion has been analyzed. It has been obtained that the velocity of the contact line increases with the increase of the wetting contact angle value and of the surface tension coefficient.

  6. Radiatively heated high voltage pyroelectric crystal pulser

    Energy Technology Data Exchange (ETDEWEB)

    Antolak, A.J., E-mail: antolak@sandia.gov [Sandia National Laboratories, Livermore, CA 94550 (United States); Chen, A.X. [Sandia National Laboratories, Livermore, CA 94550 (United States); Leung, K.-N. [Sandia National Laboratories, Livermore, CA 94550 (United States); Nuclear Engineering Department, University of California, Berkeley (United States); Morse, D.H.; Raber, T.N. [Sandia National Laboratories, Livermore, CA 94550 (United States)

    2014-01-21

    Thin lithium tantalate pyroelectric crystals in a multi-stage pulser were heated by quartz lamps during their charging phase to generate high voltage pulses. The charging voltage was determined empirically based on the measured breakdown voltage in air and verified by the induced breakdown voltage of an external high voltage power supply. A four-stage pyroelectric crystal device generated pulse discharges of up to 86 kV using both quartz lamps (radiative) and thermoelectric (conductive) heating. Approximately 50 mJ of electrical energy was harvested from the crystals when radiatively heated in air, and up to 720 mJ was produced when the crystals were submerged in a dielectric fluid. It is anticipated that joule-level pulse discharges could be obtained by employing additional stages and optimizing the heating configuration.

  7. A High Breakdown Voltage A1GaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator

    Institute of Scientific and Technical Information of China (English)

    ZHOU Bin; WANG Jin-Yan; MENG Di; LIN Shu-Xun; FANG Min; DONG Zhi-Hua; YU Min; HAOYi-Long; Cheng P. WEN

    2011-01-01

    Direct oxidation of composite Al/Ti metal films as gate insulators for AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs/HEMTs) is successfully realized.The devices fabricated with this novel process exhibit four orders of magnitude reduction in gate leakage current and remarkable breakdown voltage (Vbr =490 V vs 88 V for normal HEMT) improvement,compared with conventional Schottky-gate HEMTs.Furthermore,the transconductance of the MOSHEMT is only slightly lower (2.6%) than that of Schottky-gate HEMTs and have a wider full width of half maximum.The notable enhancement in device performance renders this new process highly promising for GaN-based microwave power amplifier applications in communication and radar systems.AlGaN/GaN high-electron mobility transistors (HEMTs) are expected to be applied in the highfrequency and high-power area because of their excellent properties.AlGaN/GaN has,for example,a wide energy band gap (3.39eV),high density (up to 1013 cm-2) two-dimensional electron gas (2DEG)and a high saturation electron velocity.Due to the unavailability of native oxide,Schottky-contact gates are commonly adopted in AlGaN/GaN HEMTs.%Direct oxidation of composite Al/Ti metal films as gate insulators for AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs/HEMTs) is successfully realized. The devices fabricated with this novel process exhibit four orders of magnitude reduction in gate leakage current and remarkable breakdown voltage (Vbr = 490 V vs 88 V for normal HEMT) improvement, compared with conventional Schottky-gate HEMTs. Furthermore, the transconductance of the MOSHEMT is only slightly lower (2.6%) than that of Schottky-gate HEMTs and have a wider full width of half maximum. The notable enhancement in device performance renders this new process highly promising for GaN-based microwave power amplifier applications in communication and radar systems.

  8. Laser-induced lateral voltage in epitaxial Al-doped ZnO thin films on tilted sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shufang; Chen, Mingjing; Yu, Wei; Chen, Jingchun; Wang, Jianglong; Fu, Guangsheng [Hebei University, College of Physics Science and Technology, Baoding (China); Zhao, Kun; Zhao, Songqing [Chinese University of Petroleum, Department of Mathematics and Physics, Beijing (China)

    2011-06-15

    Laser-induced voltage effects in epitaxial Al-doped ZnO thin films on tilted sapphire have been experimentally studied at room temperature. An open-circuit lateral voltage signal with nanosecond response time was observed when the film surface was irradiated by laser pulses of 308 nm and 1064 nm, and the voltage responsivity of the signal for 308-nm irradiation is much higher than that for 1064-nm irradiation. A mechanism based on the thermoelectric effect is proposed to explain the origin of the laser-induced lateral voltage in this system. The result suggests that the Al-doped ZnO thin films have a potential application in wide-band photodetectors from ultraviolet to near infrared. (orig.)

  9. SEMICONDUCTOR DEVICES Low voltage copper phthalocyanine organic thin film transistors with a polymer layer as the gate insulator

    Science.gov (United States)

    Xueqiang, Liu; Weihong, Bi; Tong, Zhang

    2010-12-01

    Low voltage organic thin film transistors (OTFTs) were created using polymethyl-methacrylate-co g-lyciclyl-methacrylate (PMMA-GMA) as the gate dielectric. The OTFTs performed acceptably at supply voltages of about 10 V. From a densely packed copolymer brush, a leakage current as low as 2 × 10-8 A/cm2 was obtained. From the measured capacitance—insulator frequency characteristics, a dielectric constant in the range 3.9-5.0 was obtained. By controlling the thickness of the gate dielectric, the threshold voltage was reduced from -3.5 to -2.0 V. The copper phthalocyanine (CuPc) based organic thin film transistor could be operated at low voltage and 1.2 × 10-3 cm2/(V·s) mobility.

  10. On the influence of high voltage slope steepness on breakdown and development of pulsed dielectric barrier discharges

    Science.gov (United States)

    Höft, H.; Becker, M. M.; Loffhagen, D.; Kettlitz, M.

    2016-12-01

    The influence of the steepness of the applied high voltage (HV) waveform on the characteristics of pulsed dielectric barrier discharges (DBDs) is investigated using a single-filament arrangement with 1 mm gap in 0.1 vol% O2 in N2 at atmospheric pressure. The slope steepness was varied between 75 V ns-1 and 200 V ns-1. The discharge development was recorded with a combined iCCD and streak camera system accompanied by electrical measurements. The analysis was supported by time-dependent, spatially one-dimensional fluid model calculations. A steeper HV slope leads to a higher transferred charge and electrical energy per cycle. The DBD emission structure in the gap features a shorter ‘dark space’ in front of the cathode for steeper HV pulses. The starting velocity of the positive streamer-like propagation at the rising slope of the HV pulses increases with increasing slope steepness, but without influencing the maximal velocity in front of the cathode. At the falling slope, however, smaller propagation velocities for steeper pulses were measured. The modelling results and the measurements of the emission during the pre-phase suggest that the elevated pre-ionisation and higher electrical energy for steeper HV slopes is responsible for most of the observed effects.

  11. Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

    Energy Technology Data Exchange (ETDEWEB)

    Chiou, Uio-Pu; Pan, Fu-Ming, E-mail: fmpan@faculty.nctu.edu.tw [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China); Shieh, Jia-Min, E-mail: jmshieh@narlabs.org.tw, E-mail: jmshieh@faculty.nctu.edu.tw [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China); Yang, Chih-Chao [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Huang, Wen-Hsien [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China); National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Kao, Yo-Tsung [Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)

    2013-11-11

    We fabricated nano-crystalline Si (nc-Si:H) thin-film transistors (TFTs) with a double-metal-gate structure, which showed a high electron-mobility (μ{sub FE}) and adjustable threshold voltages (V{sub th}). The nc-Si:H channel and source/drain (S/D) of the multilayered TFT were deposited at 375 °C by inductively coupled plasma chemical vapor deposition. The low grain-boundary defect density of the channel layer is responsible for the high μ{sub FE} of 370 cm{sup 2}/V-s, a steep subthreshold slope of 90 mV/decade, and a low V{sub th} of −0.64 V. When biased with the double-gate driving mode, the device shows a tunable V{sub th} value extending from −1 V up to 2.7 V.

  12. Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Kuan-Hsien; Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Wu, Ming-Siou; Hung, Yi-Syuan; Sze, Simon M. [Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Hung, Pei-Hua; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsieh, Tien-Yu [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Yeh, Bo-Liang [Advanced Display Technology Research Center, AU Optronics, No. 1, Li-Hsin Rd. 2, Hsinchu Science Park, Hsinchu 30078, Taiwan (China)

    2014-03-31

    This Letter investigates abnormal channel width-dependent threshold voltage variation in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Unlike drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, the wider the channel, the larger the threshold voltage observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider channel devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast IV measurement is utilized to demonstrate the self-heating induced anomalous channel width-dependent threshold voltage variation.

  13. Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors

    Science.gov (United States)

    Song, Yang; Katsman, Alexander; Butcher, Amy L.; Paine, David C.; Zaslavsky, Alexander

    2017-10-01

    Thin film transistors (TFTs) based on transparent oxide semiconductors, such as indium zinc oxide (IZO), are of interest due to their improved characteristics compared to traditional a-Si TFTs. Previously, we reported on top-gated IZO TFTs with an in-situ formed HfO2 gate insulator and IZO active channel, showing high performance: on/off ratio of ∼107, threshold voltage VT near zero, extracted low-field mobility μ0 = 95 cm2/V·s, and near-perfect subthreshold slope at 62 mV/decade. Since device stability is essential for technological applications, in this paper we report on the temporal and voltage stress stability of IZO TFTs. Our devices exhibit a small negative VT shift as they age, consistent with an increasing carrier density resulting from an increasing oxygen vacancy concentration in the channel. Under gate bias stress, freshly annealed TFTs show a negative VT shift during negative VG gate bias stress, while aged (>1 week) TFTs show a positive VT shift during negative VG stress. This indicates two competing mechanisms, which we identify as the field-enhanced generation of oxygen vacancies and the field-assisted migration of oxygen vacancies, respectively. A simplified kinetic model of the vacancy concentration evolution in the IZO channel under electrical stress is provided.

  14. Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application

    NARCIS (Netherlands)

    Tripathi, A.K.; Smits, E.C.P.; Putten, J.B.P.H. van der; Neer, M. van; Myny, K.; Nag, M.; Steudel, S.; Vicca, P.; O'Neill, K.; Veenendaal, E. van; Genoe, G.; Heremans, P.; Gelinck, G.H.

    2011-01-01

    In this work a technology to fabricate low-voltage amorphous gallium-indium-zinc oxide thin film transistors (TFTs) based integrated circuits on 25 µm foils is presented. High performance TFTs were fabricated at low processing temperatures (<150 °C) with field effect mobility around 17 cm2 /V s. The

  15. Developments of high-voltage all-solid-state thin-film lithium ion batteries

    Science.gov (United States)

    Schwenzel, J.; Thangadurai, V.; Weppner, W.

    Powders of Li 2MMn 3O 8 (M = Fe, Co) were prepared by glycine nitrate combustion from the corresponding metal nitrates. The reaction products were pressed into pellets with the addition of 20 wt.% excess LiNO 3, which were used as targets for e-beam evaporation. A high-voltage all-solid-state thin-film lithium ion battery was demonstrated by the sequential deposition of spinel structured Li 2MMn 3O 8 (M = Co, Fe) as positive electrode by e-beam evaporation, LiPON as electrolyte, and metallic Al as negative electrode by sputtering in N 2 and Ar gas mixtures with specific power and gas flow rates. A lithium ion conductivity of ∼10 -6 S cm -1 was observed for the optimized thin-film LiPON electrolyte prepared under the condition of a chamber pressure of 2.6 × 10 -2 mbar and a power of 60-100 W. The chemical diffusion coefficient (D ˜) was found to be in the range 10 -13 to 10 -12 cm 2 s -1 for any composition x of Li 2- xMMn 3O 8 (M = Fe, Co) in the range from 0.1 to 1.6 by employing the galvanostatic intermittent titration technique (GITT). AC impedance studies revealed a charge transfer resistance of 260-290 Ω, a double layer capacity of ∼45-70 μF for an electrode area of 6.7 cm 2.

  16. Persistent photocurrent (PPC) in solution-processed organic thin film transistors: Mechanisms of gate voltage control

    Science.gov (United States)

    Singh, Subhash; Mohapatra, Y. N.

    2016-07-01

    There is a growing need to understand mechanisms of photoresponse in devices based on organic semiconductor thin films and interfaces. The phenomenon of persistent photocurrent (PPC) has been systematically investigated in solution processed TIPS-Pentacene based organic thin film transistors (OTFTs) as an important example of an organic semiconductor material system. With increasing light intensity from dark to 385 mW/cm2, there is a significant shift in threshold voltage (VTh) while the filed-effect mobility remains unchanged. The OTFT shows large photoresponse under white light illumination due to exponential tail states with characteristic energy parameter of 86 meV. The photo-induced current is observed to persist even for several hours after turning the light off. To investigate the origin of PPC, its quenching mechanism is investigated by a variety of methods involving a combination of gate bias, illumination and temperature. We show that a coherent model of trap-charge induced carrier concentration is able to account for the quenching behavior. Analysis of isothermal transients using time-analyzed transient spectroscopy shows that the emission rates are activated and are also field enhanced due to Poole-Frankel effect. The results shed light on the nature, origin, and energetic distribution of the traps controlling PPC in solution processed organic semiconductors and their interfaces.

  17. Voltage controlled exchange bias in an all-thin-film Cr2O3 based heterostructure

    Science.gov (United States)

    Echtenkamp, Will; Binek, Christian

    2014-03-01

    Spintronics utilizes the electron's spin degree of freedom for an advanced generation of electronic devices with novel functionalities. Controlling magnetism by electrical means has been identified as a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Previously, robust isothermal electric control of exchange bias has been achieved near room temperature utilizing a bulk single crystal of Cr2O3. In this study electric control of exchange bias in an all-thin-film system is demonstrated with significant implications for device realization. In particular, voltage controlled switching of exchange bias in a Cr2O3 based magnetoelectric magnetic tunnel junction enables nonvolatile memory storage with virtually dissipationless writing at, or above, room temperature. Additionally, unique physical properties which arise due to the Cr2O3 thin film geometry are highlighted. This project is supported by NSF through MRSEC DMR 0213808, by the NRC/NRI supplement to MRSEC, and by CNFD and C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program.

  18. Reduction of Electric Breakdown Voltage in LC Switching Shutters / Elektriskās Caursites Sprieguma Samazināšana Šķidro Kristālu Šūnās

    Science.gov (United States)

    Mozolevskis, G.; Ozols, A.; Nitiss, E.; Linina, E.; Tokmakov, A.; Rutkis, M.

    2015-10-01

    Liquid crystal display (LCD) industry is among the most rapidly growing and innovating industries in the world. Here continuously much effort is devoted towards developing and implementing new types of LCDs for various applications. Some types of LCDs require relatively high voltages for their operation. For example, bistable displays, in which an altering field at different frequencies is used for switching from clear to scattering states and vice versa, require electric fields at around 10 V/μm for operation. When operated at such high voltages an electrical breakdown is very likely to occur in the liquid crystal (LC) cell. This has been one of the limiting factors for such displays to reach market. In the present paper, we will report on the results of electrical breakdown investigations in high-voltage LC cells. An electrical breakdown in the cell is observed when current in the liquid crystal layer is above a specific threshold value. The threshold current is determined by conductivity of the liquid crystal as well as point defects, such as dust particles in LC layer, pinholes in coatings and electrode hillocks. In order to reduce the currents flowing through the liquid crystal layer several approaches, such as electrode patterning and adding of various buffer layers in the series with LC layer, have been tested. We demonstrate that the breakdown voltages can be significantly improved by means of adding insulating thin films. Šķidro kristālu ekrānu (LCD) industrija ir viena no visstraujāk augošajām industrijām pasaulē. Daudz pūļu un resursu tiek veltīti jauna tipa LCD izstrādē dažādiem pielietojumiem. Atsevišķa tipa LCD funkcionēšanai nepieciešami augsti spriegumi. Piemēram, bistabilos LCD, kuros izkliedējošs (ieslēgts) un dzidrs (izslēgts) stāvoklis tiek iegūts ar dažādu frekvenču maiņsprieguma palīdzību, elektriskā lauka intensitāte šķidrā kristāla slānī var sasniegt pat 10 V/μm. Augstās elektriskā lauka intensit

  19. Threshold voltage manipulation of ZnO-graphene oxide hybrid thin film transistors via Au nanoparticles doping

    Science.gov (United States)

    Song, Wooseok; Kim, Ki Woong; Kim, Seong Jun; Min, Bok Ki; Rang Lim, Yi; Myung, Sung; Lee, Sun Sook; Lim, Jongsun; An, Ki-Seok

    2015-12-01

    In order to fabricate a complementary inverter, precise control of the threshold voltages for n-type semiconductor based thin film transistors (TFTs) is highly required. Here we provided a facile methodology for controlling the threshold voltage of ZnO-based TFTs. Chemically-derived graphene oxide (GO) and Au-decorated GO (Au-GO) flakes were hybridized with solution-processed ZnO thin films to control electron injection determined by the workfunction difference between ZnO and GO or Au-GO. As a result, the threshold voltages for the ZnO, GO/ZnO, and Au-GO/ZnO TFTs were 24 ± 3 V, -11 ± 4 V, and 63 ± 5 V, respectively, which determine depletion or enhancement mode TFTs without any significant change in the field effect mobility and on/off ratio.

  20. Space charge inhibition effect of nano-Fe{sub 3}O{sub 4} on improvement of impulse breakdown voltage of transformer oil based on improved Kerr optic measurements

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Qing, E-mail: yangqing@cqu.edu.cn; Yu, Fei; Sima, Wenxia [State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Shapingba District, Chongqing, 400044 (China); Zahn, Markus [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2015-09-15

    Transformer oil-based nanofluids (NFs) with 0.03 g/L Fe{sub 3}O{sub 4} nanoparticle content exhibit 11.2% higher positive impulse breakdown voltage levels than pure transformer oils. To study the effects of the Fe{sub 3}O{sub 4} nanoparticles on the space charge in transformer oil and to explain why the nano-modified transformer oil exhibits improved impulse breakdown voltage characteristics, the traditional Kerr electro-optic field mapping technique is improved by increasing the length of the parallel-plate electrodes and by using a photodetector array as a high light sensitivity device. The space charge distributions of pure transformer oil and of NFs containing Fe{sub 3}O{sub 4} nanoparticles can be measured using the improved Kerr electro-optic field mapping technique. Test results indicate a significant reduction in space charge density in the transformer oil-based NFs with the Fe{sub 3}O{sub 4} nanoparticles. The fast electrons are captured by the nanoparticles and are converted into slow-charged particles in the NFs, which then reduce the space charge density and result in a more uniform electric field distribution. Streamer propagation in the NFs is also obstructed, and the breakdown strengths of the NFs under impulse voltage conditions are also improved.

  1. Impulse breakdown of liquids

    CERN Document Server

    Ushakov, Vasily Y

    2007-01-01

    The book describes the main physical processes and phenomena in pulsed electric breakdown. The knowledge and the control of the electric breakdown of liquids is important not only for the insulation inside power systems but it is also used for the creation and information of high voltage and high current pulses. Such high-voltage micro- and nanosecond pulses find wide application in experimental physics, electro discharge technology, physics of dielectrics, radar detection and ranging, high-speed photography. The nature of charge carriers, mechanism of formation and evolution of the gas phase,

  2. Model of orbital populations for voltage-controlled magnetic anisotropy in transition-metal thin films

    Science.gov (United States)

    Zhang, Jia; Lukashev, Pavel V.; Jaswal, Sitaram S.; Tsymbal, Evgeny Y.

    2017-07-01

    Voltage-controlled magnetic anisotropy (VCMA) is an efficient way to manipulate the magnetization states in nanomagnets and is promising for low-power spintronic applications. The underlying physical mechanism for VCMA is known to involve a change in the d orbital occupation on the transition-metal interface atoms with an applied electric field. However, a simple qualitative picture of how this occupation controls the magnetocrystalline anisotropy (MCA) and even why in certain cases the MCA has the opposite sign remains elusive. In this paper, we exploit a simple model of orbital populations to elucidate a number of features typical for the interface MCA, and the effect of the electric field on it, for 3 d transition-metal thin films used in magnetic tunnel junctions. We find that in all considered cases, including the Fe(001) surface, clean F e1 -xC ox(001 ) /MgO interface, and oxidized Fe(001)/MgO interface, the effects of alloying and the electric field enhance the MCA energy with electron depletion, which is largely explained by the occupancy of the minority-spin dx z ,y z orbitals. However, the hole-doped Fe(001) exhibits an inverse VCMA in which the MCA enhancement is achieved when electrons are accumulated at the Fe (001)/MgO interface with the applied electric field. In this regime, we predict a significantly enhanced VCMA that exceeds 1 pJ/Vm. Realizing this regime experimentally may be favorable for the practical purpose of voltage-driven magnetization reversal.

  3. High voltage research (breakdown strengths of gaseous and liquid insulators) and environmental effects of dielectric gases. Semiannual report, October 1, 1979-March 31, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Christophorou, L.G.; James, D.R.; Pai, R.Y.

    1980-08-01

    Topics covered include basic studies of gaseous dielectrics, direct current breakdown strengths of gases/mixtures, environmental effects studies and decomposition analyses, impulse studies, breakdown strengths of binary mixtures with concentric cylinder geometry, and a discussion of the experimental apparatus. (GHT)

  4. Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

    Science.gov (United States)

    Subramanyam, Guru; Cole, M. W.; Sun, Nian X.; Kalkur, Thottam S.; Sbrockey, Nick M.; Tompa, Gary S.; Guo, Xiaomei; Chen, Chonglin; Alpay, S. P.; Rossetti, G. A.; Dayal, Kaushik; Chen, Long-Qing; Schlom, Darrell G.

    2013-11-01

    There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.

  5. Challenges and opportunities for multi-functional oxide thin films for voltage tunable radio frequency/microwave components

    Energy Technology Data Exchange (ETDEWEB)

    Subramanyam, Guru, E-mail: gsubramanyam1@udayton.edu [Department of Electrical and Computer Engineering, University of Dayton, Dayton, Ohio 45469 (United States); Cole, M. W., E-mail: melanie.w.cole.civ@mail.mil [U.S. Army Research Laboratory, Weapons and Materials Research Directorate, Aberdeen Proving Ground, Maryland 21005 (United States); Sun, Nian X. [Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States); Kalkur, Thottam S. [Department of Electrical and Computer Engineering, University of Colorado, Colorado Springs, Colorado 80918 (United States); Sbrockey, Nick M.; Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, New Jersey 08854 (United States); Guo, Xiaomei [Boston Applied Technologies, Inc., Woburn, Massachusetts 01801 (United States); Chen, Chonglin [Department of Physics and Astronomy, University of Texas, San Antonio, Texas 78249 (United States); Alpay, S. P.; Rossetti, G. A. [Institute of Materials Science and Materials Science and Engineering Program, University of Connecticut, Storrs, Connecticut 06269 (United States); Dayal, Kaushik [Mechanics, Materials and Computing, Civil and Environmental Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Chen, Long-Qing [Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802 (United States); Schlom, Darrell G. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States)

    2013-11-21

    There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges.

  6. A low voltage and small hysteresis C60 thin film transistor*

    Institute of Scientific and Technical Information of China (English)

    Zhou Jianlin; Chen Rengang

    2011-01-01

    Organic thin film transistors with C60 as an n-type semiconductor have been fabricated. A tantalum pentoxide (Ta2O5)/poly-methylmethacrylate (PMMA) double-layer structured gate dielectric was used. The Ta2O5 layer was prepared by using a simple solution-based and economical anodization technique. Our results demonstrate that double gate insulators can combine the advantage of Ta2O5 with high dielectric constant and polymer insulator for a better interface with the organic semiconductor. The performance of the device can be improved obviously with double gate insulators, compared to that obtained by using a single Ta2O5 or PMMA insulator. Then, a good performance n-type OTFT, which can work at 10 V with mobility, threshold voltage and on/off current ratio of,respectively, 0.26 cm2/(V·s), 3.2 V and 8.31 × 104, was obtained. Moreover, such an OTFT shows a negligible “hysteresis effect” contributing to the hydroxyl-free insulator surface.

  7. Improvement in interfacial characteristics of low-voltage carbon nanotube thin-film transistors with solution-processed boron nitride thin films

    Science.gov (United States)

    Jeon, Jun-Young; Ha, Tae-Jun

    2017-08-01

    In this article, we demonstrate the potential of solution-processed boron nitride (BN) thin films for high performance single-walled carbon nanotube thin-film transistors (SWCNT-TFTs) with low-voltage operation. The use of BN thin films between solution-processed high-k dielectric layers improved the interfacial characteristics of metal-insulator-metal devices, thereby reducing the current density by three orders of magnitude. We also investigated the origin of improved device performance in SWCNT-TFTs by employing solution-processed BN thin films as an encapsulation layer. The BN encapsulation layer improves the electrical characteristics of SWCNT-TFTs, which includes the device key metrics of linear field-effect mobility, sub-threshold swing, and threshold voltage as well as the long-term stability against the aging effect in air. Such improvements can be achieved by reduced interaction of interfacial localized states with charge carriers. We believe that this work can open up a promising route to demonstrate the potential of solution-processed BN thin films on nanoelectronics.

  8. Characterization of Highly Efficient CdTe Thin Film Solar Cells by the Capacitance-Voltage Profiling Technique

    Science.gov (United States)

    Okamoto, Tamotsu; Yamada, Akira; Konagai, Makoto

    2000-05-01

    The electrical properties of highly efficient CdTe thin film solar cells prepared by close-spaced sublimation (CSS) were investigated by capacitance-voltage (C-V) measurement. According to the dependence of the cell performance on the substrate temperature in the CSS process, the open-circuit voltage (Voc) increased with increasing the substrate temperature below 630°C@. The carrier concentration profiles revealed that the net acceptor concentration exponentially increased from the CdS/CdTe interface to the rear and that the acceptor concentration increased with increasing substrate temperature. This result suggests that Voc is improved as a result of the increase in the acceptor concentration.

  9. Low-Voltage InGaZnO Thin Film Transistors with Small Sub-Threshold Swing.

    Science.gov (United States)

    Cheng, C H; Chou, K I; Hsu, H H

    2015-02-01

    We demonstrate a low-voltage driven, indium-gallium-zinc oxide thin-film transistor using high-κ LaAlO3 gate dielectric. A low VT of 0.42 V, very small sub-threshold swing of 68 mV/dec, field-effect mobility of 4.1 cm2/Ns and low operation voltage of 1.4 V were reached simultaneously in LaAlO3/IGZO TFT device. This low-power and small SS TFT has the potential for fast switching speed and low power applications.

  10. Low-voltage polymer/small-molecule blend organic thin-film transistors and circuits fabricated via spray deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hunter, By Simon; Anthopoulos, Thomas D., E-mail: t.anthopoulos@ic.ac.uk [Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington SW7 2AZ (United Kingdom); Ward, Jeremy W.; Jurchescu, Oana D. [Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109 (United States); Payne, Marcia M.; Anthony, John E. [Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506 (United States)

    2015-06-01

    Organic thin-film electronics have long been considered an enticing candidate in achieving high-throughput manufacturing of low-power ubiquitous electronics. However, to achieve this goal, more work is required to reduce operating voltages and develop suitable mass-manufacture techniques. Here, we demonstrate low-voltage spray-cast organic thin-film transistors based on a semiconductor blend of 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene and poly(triarylamine). Both semiconductor and dielectric films are deposited via successive spray deposition in ambient conditions (air with 40%–60% relative humidity) without any special precautions. Despite the simplicity of the deposition method, p-channel transistors with hole mobilities of >1 cm{sup 2}/Vs are realized at −4 V operation, and unipolar inverters operating at −6 V are demonstrated.

  11. Persistent Hall voltages across thin planar charged quantum rings on the surface of a three-dimensional topological insulator

    Science.gov (United States)

    Durganandini, P.

    2016-03-01

    We study theoretically, the electromagnetic response due to localized charge current distributions above a topological insulator (coated with a thin ferromagnetic layer) using the electromagnetic SL(2,Z) duality symmetry. We show that the localized current induces an electric field which depends on the current —this is a manifestation of the topological magnetoelectric (TME) effect. We also show that if the charge carriers have spin, then they acquire Aharanov-Casher phases which depend on the current. As an application, we consider thin planar charged quantum rings with persistent currents on the surface of a TI and show that the TME manifests itself as persistent Hall voltages across the charged ring. If the spin is also taken into account, then persistent spin Hall voltages develop across the ring.

  12. MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics

    Science.gov (United States)

    Hong, Wen-Chiang; Ku, Chieh-Jen; Li, Rui; Abbaslou, Siamak; Reyes, Pavel; Wang, Szu-Ying; Li, Guangyuan; Lu, Ming; Sheng, Kuang; Lu, Yicheng

    2016-10-01

    Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. However, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. The devices are designed with unique ring-type structures and use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass.

  13. MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics

    Science.gov (United States)

    Hong, Wen-Chiang; Ku, Chieh-Jen; Li, Rui; Abbaslou, Siamak; Reyes, Pavel; Wang, Szu-Ying; Li, Guangyuan; Lu, Ming; Sheng, Kuang; Lu, Yicheng

    2016-01-01

    Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. However, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. The devices are designed with unique ring-type structures and use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass. PMID:27721484

  14. Growth of perpendicularly magnetized thin films on a polymer buffer and voltage-induced change of magnetic anisotropy at the MgO|CoFeB interface

    Directory of Open Access Journals (Sweden)

    D. D. Lam

    2015-06-01

    Full Text Available We show that perpendicularly magnetized thin films can be grown onto polyimide, a potentially flexible substrate. With polar Kerr magnetometry, we demonstrate that the coercive field of CoFeB thin film can be modulated by applying a back gate voltage. Our proposed multi-layered structure is suitable for surface-sensitive measurements of the voltage-induced change in anisotropy, and could be used to realize flexible spintronics devices.

  15. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    NARCIS (Netherlands)

    Niang, K.M.; Barquinha, P.M.C.; Martins, R.F.P.; Cobb, B.; Powell, M.J.; Flewitt, A.J.

    2016-01-01

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analyse

  16. Exp erimental study on breakdown voltage b etween parallel plates in high-pressure helium%高压氦气平行极板击穿电压实验研究∗

    Institute of Scientific and Technical Information of China (English)

    岳姗; 刘兴男; 时振刚

    2015-01-01

    为获得高温气冷堆核电站电气设备绝缘设计所需基础数据,本文设计了一套测量高压氦气绝缘性能的装置.利用该装置进行了15—20◦C,0.1—7 MPa氦气,间距0.25,0.35,0.5 mm平行极板击穿实验.实验表明:氦气的绝缘性能远低于空气;气压越高,氦气的击穿电压越大,3.0 MPa氦气的击穿电压与常压空气基本一致;根据低气压实验数据和巴申定律推导的公式,在高气压下计算值偏大,且偏差随着气压和间距乘积的增大不断增大;提出了可计算0.1—7 MPa氦气击穿电压的简易公式,同时修正了高气压氦气的巴申公式,并进行了理论分析.%To obtain the base data for insulation design of the electrical equipment used in the high temperature gas cooled reactor nuclear power plant, an experimental apparatus for testing helium insulation property under high pressure is designed. The apparatus is composed of a pressure vessel, a heating system, an electrical penetration assembly, a vacuum pump, a pressure gauge, a safety pressure valve, a release valve, and a helium bottle. The highest pressure that the vessel can hold is 10 MPa, and in this experiment the safety pressure valve is set to be 8 MPa. The temperature inside the vessel can be heated to 200 ◦C by a heating system. The resolution of the pressure gauge is 1 kPa, and the highest pressure that the gauge can measure is 9.999 MPa. The purity of the helium used in this experiment is 99.999%. The breakdown voltage of helium gas between two parallel plane electrodes is measured by the apparatus under the conditions of 15–20 ◦C and 0.1–7 MPa. The electrodes are made of copper, and their diameters are both 100 mm. The distances between the parallel electrodes are 0.25 mm, 0.35 mm and 0.5 mm respectively. The error of the distance is less than 0.01 mm. The DC voltage between the electrodes is supplied by GPI-735A, a withstand voltage and insulation tester produced by GW Instek

  17. Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks

    Science.gov (United States)

    Hao, Xu; Hong, Yang; Yanrong, Wang; Wenwu, Wang; Guangxing, Wan; Shangqing, Ren; Weichun, Luo; Luwei, Qi; Chao, Zhao; Dapeng, Chen; Xinyu, Liu; Tianchun, Ye

    2016-05-01

    The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler-Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process. Project supported by the National High Technology Research and Development Program (863 Program) of China (No. SS2015AA010601), the National Natural Science Foundation of China (Nos. 61176091, 61306129), and the Opening Project of the Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences.

  18. Pulsed voltage deposited lead selenide thin film as efficient counter electrode for quantum-dot-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Bin Bin [Key Laboratory of Macromolecular Science of Shaanxi Province & School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062 (China); Department of Chemical Engineering, Institute of Chemical Industry, Shaanxi Institute of Technology, Xi’an 710300 (China); Wang, Ye Feng [Key Laboratory of Macromolecular Science of Shaanxi Province & School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062 (China); Wang, Xue Qing [Faculty of Chemical, Environmental and Biological Science and Technology, Dalian University of Technology, Dalian 116024 (China); Zeng, Jing Hui, E-mail: jhzeng@ustc.edu [Key Laboratory of Macromolecular Science of Shaanxi Province & School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062 (China)

    2016-04-30

    Highlights: • PbSe thin film is deposited on FTO glass by a pulse voltage electrodeposition method. • The thin film is used as counter electrode (CE) in quantum dot-sensitized solar cell. • Superior electrocatalytic activity and stability in the polysulfide electrolyte is received. • The narrow band gap characteristics and p-type conductivity enhances the cell efficiency. • An efficiency of 4.67% is received for the CdS/CdSe co-sensitized solar cells. - Abstract: Lead selenide (PbSe) thin films were deposited on fluorine doped tin oxide (FTO) glass by a facile one-step pulse voltage electrodeposition method, and used as counter electrode (CE) in CdS/CdSe quantum dot-sensitized solar cells (QDSSCs). A power conversion efficiency of 4.67% is received for the CdS/CdSe co-sensitized solar cells, which is much better than that of 2.39% received using Pt CEs. The enhanced performance is attributed to the extended absorption in the near infrared region, superior electrocatalytic activity and p-type conductivity with a reflection of the incident light at the back electrode in addition. The physical and chemical properties were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscopy (TEM), energy-dispersive spectroscopy (EDS), reflectance spectra, electrochemical impedance spectroscopy (EIS) and Tafel polarization measurements. The present work provides a facile pathway to an efficient CE in the QDSSCs.

  19. Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Omveer, E-mail: poonia.omveer@gmail.com [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Dahiya, Raj P. [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Deenbandhu Chhotu Ram University of Science and Technology, Murthal – 131039 (India); Malik, Hitendra K.; Kumar, Parmod [Department of Physics, Indian Institute of Technology Delhi, New Delhi – 110016 (India)

    2015-08-28

    In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

  20. High voltage surface potential measurements in ambient conditions: Application to organic thin-film transistor injection and transport characterization

    Science.gov (United States)

    de Tournadre, Grégoire; Reisdorffer, Frédéric; Rödel, Reinhold; Simonetti, Olivier; Klauk, Hagen; Giraudet, Louis

    2016-03-01

    A scanning surface potential measurement technique suited for thin-film devices operating under high voltages is reported. A commercial atomic force microscope has been customized to enable a feedback-controlled and secure surface potential measurement based on phase-shift detection under ambient conditions. Measurements of the local potential profile along the channel of bottom-gate organic thin-film transistors (TFTs) are shown to be useful to disentangle the contributions from the channel and contacts to the device performance. Intrinsic contact current-voltage characteristics have been measured on bottom-gate, top-contact (staggered) TFTs based on the small-molecule semiconductor dinaphtho[2,3-b:2',3-f]thieno[3,2-b]thiophene (DNTT) and on bottom-gate, bottom-contact (coplanar) TFTs based on the semiconducting polymer polytriarylamine (PTAA). Injection has been found to be linear in the staggered DNTT TFTs and nonlinear in the coplanar PTAA TFTs. In both types of TFT, the injection efficiency has been found to improve with increasing gate bias in the accumulation regime. Contact resistances as low as 130 Ω cm have been measured in the DNTT TFTs. A method that eliminates the influence of bias-stress-induced threshold-voltage shifts when measuring the local charge-carrier mobility in the channel is also introduced, and intrinsic channel mobilities of 1.5 cm2 V-1 s-1 and 1.1 × 10-3 cm2 V-1 s-1 have been determined for DNTT and PTAA. In both semiconductors, the mobility has been found to be constant with respect to the gate bias. Despite its simplicity, the Kelvin probe force microscopy method reported here provides robust and accurate surface potential measurements on thin-film devices under operation and thus paves the way towards more extensive studies of particular interest in emerging fields of solid-state electronics.

  1. Fabrication of Silicon Based Novel Structure JBS Diode with Breakdown Voltage above 300 V%300V以上硅基新型JBS肖特基二极管的制备

    Institute of Scientific and Technical Information of China (English)

    王一帆; 王朝林; 刘肃; 何少博

    2011-01-01

    为了在保留传统肖特基二极管正向压降低、电流密度大优点的基础上,使其反向击穿电压提高到了300 v以上,我们采用硅材料做为衬底,肖特基结区采用蜂房结构,终端采用两道场限环结构加一道切断环结构,所制备的肖特基二极管在正向电流10A时,正向压降仅为0.79 V;同时在施加300 V反向电压时,反向漏电流在5μA以下.%To retain the advantages of traditional Schottky diodes, such as high current density under low forward voltage and improve their breakdown voltage to above 300 V, we fabricated silicon-based novel structure JBS diodes. Its Schottky barrier area is a honey comb structure, and its terminal is formed by two floating field limiting rings(FLRs) plus a cutoff ring structure. Its forward voltage-drop is only 0. 79 V under 10 A current, while its leakage current is less than 5 (xA when 300 V reverse voltage is applied.

  2. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Kavitha, A.; Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India); Subramanian, N. Sankara [Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India); Loganathan, S. [Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  3. Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors

    Science.gov (United States)

    Jiang, Guixia; Liu, Ao; Liu, Guoxia; Zhu, Chundan; Meng, You; Shin, Byoungchul; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai

    2016-10-01

    Solution-processed metal-oxide thin films with high dielectric constants (k) have been extensively studied for low-cost and high-performance thin-film transistors (TFTs). In this report, MgO dielectric films were fabricated using the spin-coating method. The MgO dielectric films annealed at various temperatures (300, 400, 500, and 600 °C) were characterized by using thermogravimetric analysis, optical spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and atomic-force microscopy. The electrical measurements indicate that the insulating properties of MgO thin films are improved with an increase in annealing temperature. In order to clarify the potential application of MgO thin films as gate dielectrics in TFTs, solution-derived In2O3 channel layers were separately fabricated on various MgO dielectric layers. The optimized In2O3/MgO TFT exhibited an electron mobility of 5.48 cm2/V s, an on/off current ratio of 107, and a subthreshold swing of 0.33 V/dec at a low operation voltage of 6 V. This work represents a great step toward the development of portable and low-power consumption electronics.

  4. Threshold-Voltage-Shift Compensation and Suppression Method Using Hydrogenated Amorphous Silicon Thin-Film Transistors for Large Active Matrix Organic Light-Emitting Diode Displays

    Science.gov (United States)

    Oh, Kyonghwan; Kwon, Oh-Kyong

    2012-03-01

    A threshold-voltage-shift compensation and suppression method for active matrix organic light-emitting diode (AMOLED) displays fabricated using a hydrogenated amorphous silicon thin-film transistor (TFT) backplane is proposed. The proposed method compensates for the threshold voltage variation of TFTs due to different threshold voltage shifts during emission time and extends the lifetime of the AMOLED panel. Measurement results show that the error range of emission current is from -1.1 to +1.7% when the threshold voltage of TFTs varies from 1.2 to 3.0 V.

  5. Pressure and gap length dependence of gap breakdown voltage and discharge current of discharge-pumped KrF excimer laser. Hoden reiki KrF laser no zetsuen hakai den prime atsu to reiki denryu no atsuryoku, gap cho izon sei

    Energy Technology Data Exchange (ETDEWEB)

    Yukimura, K.; Kawakami, H. (Doshisha Univ., Tokyo (Japan)); Hitomi, K. (Kyoto Polytechnic College, Kyoto (Japan))

    1991-04-20

    On the gap destruction characteristics of UV-preionized discharge-pumped KrF excimer laser (charge transfer type) and the electric characteristics of the excited discharge, studies were made by changing the pressure (1.5-3 atm) and the discharge gap length (14-21 mm) of the discharge medium. (1) Gap breakdown voltage and the maximum current of the excited discharge give a similarity by a product of pressure and the gap length at the charge volatge. (2) Insulation breakdown of the gap occurs at the wave front of the applied voltage and the breakdown time gets delayed by the decreasing voltage applied. By setting the ionization index at constant value 20, the gap breakdown voltage is estimated at the error within 10%. (3) The relation between the maximum current, pressure and the gap length product changes the characteristics by the charge voltage of the primary condenser. With the result combined with the standardization of voltage/current of the excited discharge, the electric characteristics at the specific pressure and gap length can be readily known. 10 refs., 10 figs.

  6. Low frequency voltage noise in current biased HTCS thin films. [BiSrCaCuO

    Energy Technology Data Exchange (ETDEWEB)

    Gierlowski, P. (Inst. Fizyki PAN, Warszawa (Poland)); Jung, G. (Inst. Fizyki PAN, Warszawa (Poland) Physics Dept., Ben Gurion Univ. of the Negev, Beer-Sheva (Israel) Dipt. di Fisica, Univ. di Salerno (Italy)); Kula, W. (Inst. Fizyki PAN, Warszawa (Poland) Electrical Engineering Dept., Univ. of Rochester, NY (United States)); Lewandowski, S.J. (Inst. Fizyki PAN, Warszawa (Poland)); Savo, B. (Dipt. di Fisica, Univ. di Salerno (Italy)); Sobolewski, R. (Inst. Fizyki PAN, Warszawa (Poland) Electrical Engineering Dept., Univ. of Rochester, NY (United States)); Tebano, A. (Dipt. di Ingegneria Meccanica, Univ. di Roma Tor-Vergata (Italy)); Vecchione, A. (Physics Dept., Ben Gurion Univ. of the Negev, Beer-Sheva (Israel) Dipt. di Fisica, Univ. di Salerno (Italy))

    1994-02-01

    Pronounced changes in low-frequency noise power spectra have been observed, close to the transition temperature, in current biased high-T[sub c] superconducting thin films. Generally, the spectra scale as 1/f[sup [alpha

  7. Flexible low-voltage polymer thin-film transistors using supercritical CO2-deposited ZrO2 dielectrics.

    Science.gov (United States)

    Wei, Qingshuo; You, Eunyoung; Hendricks, Nicholas R; Briseno, Alejandro L; Watkins, James J

    2012-05-01

    The fabrication of low-voltage flexible organic thin film transistors using zirconia (ZrO(2)) dielectric layers prepared via supercritical fluid deposition was studied. Continuous, single-phase films of approximately 30 nm thick ZrO(2) were grown on polyimide (PI)/aluminum (Al) substrates at 250 °C via hydrolysis of tetrakis(2,2,6,6-tetramethyl-3,5-heptane-dionato) zirconium in supercritical carbon dioxide. This dielectric layer showed a high areal capacitance of 317 nF cm(-2) at 1 kHz and a low leakage current of 1.8 × 10(-6) A cm(-2) at an applied voltage of -3 V. By using poly(3-hexylthiophene) (P3HT) as a semiconductor, we have fabricated flexible thin film transistors operating at V(DS) = -0.5 V and V(G) in a range from 0.5 V to -4 V, with on/off ratios on the order of 1 × 10(3) and mobility values higher than 0.1 cm(2)/(V s).

  8. Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production

    Directory of Open Access Journals (Sweden)

    F. Urbain

    2014-01-01

    Full Text Available Hydrogenated amorphous silicon thin film tandem solar cells (a-Si:H/a-Si:H have been developed with focus on high open-circuit voltages for the direct application as photocathodes in photoelectrochemical water splitting devices. By temperature variation during deposition of the intrinsic a-Si:H absorber layers the band gap energy of a-Si:H absorber layers, correlating with the hydrogen content of the material, can be adjusted and combined in a way that a-Si:H/a-Si:H tandem solar cells provide open-circuit voltages up to 1.87 V. The applicability of the tandem solar cells as photocathodes was investigated in a photoelectrochemical cell (PEC measurement set-up. With platinum as a catalyst, the a-Si:H/a-Si:H based photocathodes exhibit a high photocurrent onset potential of 1.76 V versus the reversible hydrogen electrode (RHE and a photocurrent of 5.3 mA/cm2 at 0 V versus RHE (under halogen lamp illumination. Our results provide evidence that a direct application of thin film silicon based photocathodes fulfills the main thermodynamic requirements to generate hydrogen. Furthermore, the presented approach may provide an efficient and low-cost route to solar hydrogen production.

  9. Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors

    KAUST Repository

    Park, Jihoon

    2016-11-29

    Multilayer channel structure is used to effectively manipulate the threshold voltage of zinc oxide transistors without degrading its field-effect mobility. Transistors operating in enhancement mode with good mobility are fabricated by optimizing the structure of the multilayer channel. The optimization is attributed to the formation of additional channel and suppression of the diffusion of absorbed water molecules and oxygen vacancies.

  10. High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, C.; Samnakay, R.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States); Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

    2015-02-14

    We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

  11. Dielectric breakdown of cell membranes.

    Science.gov (United States)

    Zimmermann, U; Pilwat, G; Riemann, F

    1974-11-01

    With human and bovine red blood cells and Escherichia coli B, dielectric breakdown of cell membranes could be demonstrated using a Coulter Counter (AEG-Telefunken, Ulm, West Germany) with a hydrodynamic focusing orifice. In making measurements of the size distributions of red blood cells and bacteria versus increasing electric field strength and plotting the pulse heights versus the electric field strength, a sharp bend in the otherwise linear curve is observed due to the dielectric breakdown of the membranes. Solution of Laplace's equation for the electric field generated yields a value of about 1.6 V for the membrane potential at which dielectric breakdown occurs with modal volumes of red blood cells and bacteria. The same value is also calculated for red blood cells by applying the capacitor spring model of Crowley (1973. Biophys. J. 13:711). The corresponding electric field strength generated in the membrane at breakdown is of the order of 4 . 10(6) V/cm and, therefore, comparable with the breakdown voltages for bilayers of most oils. The critical detector voltage for breakdown depends on the volume of the cells. The volume-dependence predicted by Laplace theory with the assumption that the potential generated across the membrane is independent of volume, could be verified experimentally. Due to dielectric breakdown the red blood cells lose hemoglobin completely. This phenomenon was used to study dielectric breakdown of red blood cells in a homogeneous electric field between two flat platinum electrodes. The electric field was applied by discharging a high voltage storage capacitor via a spark gap. The calculated value of the membrane potential generated to produce dielectric breakdown in the homogeneous field is of the same order as found by means of the Coulter Counter. This indicates that mechanical rupture of the red blood cells by the hydrodynamic forces in the orifice of the Coulter Counter could also be excluded as a hemolysing mechanism. The detector

  12. High-voltage thin-film GaN LEDs fabricated on ceramic substrates: the alleviated droop effect at 670 W/cm(2).

    Science.gov (United States)

    Tsai, M L; Liao, J H; Yeh, J H; Hsu, T C; Hon, S J; Chung, T Y; Lai, K Y

    2013-11-04

    High-voltage thin-film GaN LEDs with the emission wavelength of 455 nm were fabricated on ceramic substrates (230 W/m · K). The high-voltage operation was achieved by three cascaded sub-LEDs with dielectric passivation and metal bridges conformally deposited on the side walls. Under the driving power of 670 W/cm(2), the high-voltage LEDs exhibit much alleviated efficiency droop and the operative temperature below 80 °C. The excellent performances were attributed to the improved current spreading within each sub-LED and the superior heat sinking of the ceramic substrate.

  13. Influence of discharge voltage on the sensitivity of the resultant sputtered NiO thin films toward hydrogen gas

    Energy Technology Data Exchange (ETDEWEB)

    Khalaf, Mohammed K. [Center of Applied Physics, Directorate of Materials Research, Ministry of Science and Technology, Baghdad (Iraq); Mutlak, Rajaa H. [Dept. of Physics, College of Science, University of Baghdad, Ministry of Higher Education and Scientific Research, Baghdad (Iraq); Khudiar, Ausama I., E-mail: ausamaikhudiar@yahoo.com [Center of Applied Physics, Directorate of Materials Research, Ministry of Science and Technology, Baghdad (Iraq); Hial, Qahtan G. [Dept. of Physics, College of Science, University of Baghdad, Ministry of Higher Education and Scientific Research, Baghdad (Iraq)

    2017-06-01

    Nickel oxide thin films were deposited on glass substrates as the main gas sensor for H{sub 2} by the DC sputtering technique at various discharge voltages within the range of 1.8–2.5 kV. Their structural, optical and gas sensing properties were investigated by XRD, AFM, SEM, ultraviolet visible spectroscopy and home-made gas sensing measurement units. A diffraction peak in the direction of NiO (200) was observed for the sputtered films, thereby indicating that these films were polycrystalline in nature. The optical band gap of the films decreased from 3.8 to 3.5 eV when the thickness of the films was increased from 83.5 to 164.4 nm in relation to an increase in the sputtering discharge voltage from 1.8 to 2.5 kV, respectively. The gas sensitivity performance of the NiO films that were formed was studied and the electrical responses of the NiO-based sensors toward different H{sub 2} concentrations were also considered. The sensitivity of the gas sensor increased with the working temperature and H{sub 2} gas concentration. The thickness of the NiO thin films was also an important parameter in determining the properties of the NiO films as H{sub 2} sensors. It was shown in this study that NiO films have the capability to detect H{sub 2} concentrations below 3% in wet air, a feature that allows this material to be used directly for the monitoring of the environment.

  14. Polycrystalline silicon thin-film solar cells prepared by layered laser crystallization with 540 mV open circuit voltage

    Energy Technology Data Exchange (ETDEWEB)

    Plentz, Jonathan, E-mail: jonathan.plentz@ipht-jena.de [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena (Germany); Experimental Physics I, Institute of Physics, Ilmenau University of Technology, Weimarer Str. 32, 98693 Ilmenau (Germany); Andrä, Gudrun; Gawlik, Annett; Höger, Ingmar; Jia, Guobin; Falk, Fritz [Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena (Germany)

    2014-07-01

    Polycrystalline silicon thin film solar cells on a glass substrate are investigated. The solar cell layer structure was generated by a two-step process in which first a 100–600 nm thin seed layer is formed by diode laser crystallization of electron beam evaporated amorphous silicon. In a second step this layer is epitaxially thickened to 2–3.5 μm by layered laser crystallization. In this process further amorphous silicon is deposited and in situ repeatedly is irradiated by excimer laser pulses. The polycrystalline layer consists of grains several hundreds of microns long and several tens of microns wide and it contains a p{sup +}–p–n{sup +} doping profile. After deposition a rapid thermal annealing and hydrogen passivation steps follow. The back and front contacts are prepared after mesa structuring. The influence of the seed layer thickness on the solar cell performance was investigated. In addition, the absorber contamination due to the background pressure during absorber deposition and its influence on the short circuit current density was investigated. The best parameters reached for various solar cells are 540 mV open circuit voltage, 20.3 mA/cm{sup 2} short circuit current density (without light trapping), 75% fill factor, and 5.2% efficiency. - Highlights: • Layered laser crystallization leads to grain sizes of 10–300 μm on glass. • Open circuit voltage of 540 mV and efficiency of 5.2% are achieved. • Short circuit current is influenced by background pressure during deposition. • Short circuit current density of 20.3 mA/cm{sup 2} is reached without light trapping. • Progress requires pressures below 10{sup −7} hPa and deposition rates over 100 nm/min.

  15. Influence of discharge voltage on the sensitivity of the resultant sputtered NiO thin films toward hydrogen gas

    Science.gov (United States)

    Khalaf, Mohammed K.; Mutlak, Rajaa H.; Khudiar, Ausama I.; Hial, Qahtan G.

    2017-06-01

    Nickel oxide thin films were deposited on glass substrates as the main gas sensor for H2 by the DC sputtering technique at various discharge voltages within the range of 1.8-2.5 kV. Their structural, optical and gas sensing properties were investigated by XRD, AFM, SEM, ultraviolet visible spectroscopy and home-made gas sensing measurement units. A diffraction peak in the direction of NiO (200) was observed for the sputtered films, thereby indicating that these films were polycrystalline in nature. The optical band gap of the films decreased from 3.8 to 3.5 eV when the thickness of the films was increased from 83.5 to 164.4 nm in relation to an increase in the sputtering discharge voltage from 1.8 to 2.5 kV, respectively. The gas sensitivity performance of the NiO films that were formed was studied and the electrical responses of the NiO-based sensors toward different H2 concentrations were also considered. The sensitivity of the gas sensor increased with the working temperature and H2 gas concentration. The thickness of the NiO thin films was also an important parameter in determining the properties of the NiO films as H2 sensors. It was shown in this study that NiO films have the capability to detect H2 concentrations below 3% in wet air, a feature that allows this material to be used directly for the monitoring of the environment.

  16. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications.

    Science.gov (United States)

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-05-09

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm(2) V(-1) sec(-1), and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

  17. Impression of plasma voltage on growth of α-V{sub 2}O{sub 5} nanostructured thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Rabindar Kumar, E-mail: rkrksharma6@gmail.com; Kumar, Prabhat; Reddy, G. B. [Thin film Laboratory, Department of Physics, Indian Institute of Technology Delhi-110016 (India)

    2015-06-24

    In this communication, we synthesized vanadium pentoxide (α-V{sub 2}O{sub 5}) nanostructured thin films (NST{sub s}) accompanied with nanoflakes/ nanoplates on the Ni-coated glass substrates employing plasma assisted sublimation process (PASP) as a function of plasma voltage (V{sub p}). The effect of plasma voltage on structural, morphological, compositional, and vibrational properties have been studied systematically. The structural analysis divulged that all films deposited at different V{sub p} have pure orthorhombic phase, no impurity phase is detected under resolution limit of XRD and XPS. The morphological studies of samples is carried out by SEM, revealed that features as well as alignment of V{sub 2}O{sub 5} NST{sub s} is greatly monitored by V{sub p} and the film possessing the best features is obtained at 2500volt. In addition, XPS results reveal that V{sup 5+} oxidation state is the most prominent state in sample V{sub 2}, which represents better stoichiometric nature of film. The vibrational study of all samples is performed by FTIR and strongly support the XRD observations. All the results are in consonance with each other.

  18. Fabrication of Ultra-Thin Printed Organic TFT CMOS Logic Circuits Optimized for Low-Voltage Wearable Sensor Applications

    Science.gov (United States)

    Takeda, Yasunori; Hayasaka, Kazuma; Shiwaku, Rei; Yokosawa, Koji; Shiba, Takeo; Mamada, Masashi; Kumaki, Daisuke; Fukuda, Kenjiro; Tokito, Shizuo

    2016-05-01

    Ultrathin electronic circuits that can be manufactured by using conventional printing technologies are key elements necessary to realize wearable health sensors and next-generation flexible electronic devices. Due to their low level of power consumption, complementary (CMOS) circuits using both types of semiconductors can be easily employed in wireless devices. Here, we describe ultrathin CMOS logic circuits, for which not only the source/drain electrodes but also the semiconductor layers were printed. Both p-type and n-type organic thin film transistor devices were employed in a D-flip flop circuit in the newly developed stacked structure and exhibited excellent electrical characteristics, including good carrier mobilities of 0.34 and 0.21 cm2 V‑1 sec‑1, and threshold voltages of nearly 0 V with low operating voltages. These printed organic CMOS D-flip flop circuits exhibit operating frequencies of 75 Hz and demonstrate great potential for flexible and printed electronics technology, particularly for wearable sensor applications with wireless connectivity.

  19. Remarkable reduction in the threshold voltage of pentacene-based thin film transistors with pentacene/CuPc sandwich configuration

    Directory of Open Access Journals (Sweden)

    Yi Li

    2014-06-01

    Full Text Available This study investigates the remarkable reduction in the threshold voltage (VT of pentacene-based thin film transistors with pentacene/copper phthalocyanine (CuPc sandwich configuration. This reduction is accompanied by increased mobility and lowered sub-threshold slope (S. Sandwich devices coated with a 5 nm layer of CuPc layer are compared with conventional top-contact devices, and results indicate that VT decreased significantly from −20.4 V to −0.2 V, that mobility increased from 0.18 cm2/Vs to 0.51 cm2/Vs, and that S was reduced from 4.1 V/dec to 2.9 V/dec. However, the on/off current ratio remains at 105. This enhanced performance could be attributed to the reduction in charge trap density by the incorporated CuPc layer. Results suggest that this method is simple and effectively generates pentacene-based organic thin film transistors with high mobility and low VT.

  20. Temperature influence and reset voltage study of bipolar resistive switching behaviour in ZrO2 thin films

    Indian Academy of Sciences (India)

    Ying Li; Gaoyang Zhao; Jian Su; Erfeng Shen; Yang Ren

    2014-05-01

    We have fabricated ZrO2 thin films by sol–gel deposition and annealed them at 300, 500 and 700 °C. Reproducible - curves can be obtained for the device Cu/ZrO2/ATO which is measured at room temperature (300 K). During the RESET operation, L and H values can be controlled by the RESET voltage. Moreover, the Cu/ZrO2/ATO device which the ZrO2 thin film annealed at 300 °C can be measured as resistive switching sweeps at 200, 100 and 50 K. It was found that the ratio of off/on reduced when the measured temperature decreased. When the - measurement temperature decreases, on decreases obviously which is typical for electronic transportation in a Cu metal. It is indicated that the Cu metallic conduction filament has been formed in the ZrO2 films. Besides, the microstructure by high resolution transmission electrical microscopy (HRTEM) was also investigated.

  1. 阶梯AlGaN外延新型Al0.25Ga0.75N/GaN HEMTs击穿特性分析%Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layers

    Institute of Scientific and Technical Information of China (English)

    段宝兴; 杨银堂

    2014-01-01

    In order to optimize the surface electric field of AlGaN/GaN high electron mobility transistors (HEMTs), a novel AlGaN/GaN HEMT has been grown with a step AlGaN layer, made for the first time as far as we know, to improve the breakdown voltage. The discipline of the 2DEG concentration varying with the thickness of the AlGaN epitaxy layer has been applied to the new AlGaN/GaN HEMTs with AlGaN/GaN heterostructure. By thinning the AlGaN layer near the gate edge, the 2DEG concentration in the channel is made to form the low concentration region near the gate edge. New electric field peak has appeared at the corner of the step AlGaN layer. The high electric field has been decreased effectively due to the emergence of new electric field peak; this optimizes the surface electric field of the new AlGaN/GaN HEMTs. Then the breakdown voltage is improved to 640 V in the new AlGaN/GaN HEMTs with the step AlGaN layer as compared with 446 V for the conventional structure. In order to let the breakdown curve consistent with the test results, a certain concentration of the acceptor-like traps is added to the GaN buffer to capture the leaking current coming from the source electrode. Simulation results verify the causes for doping acceptor type ions to the GaN buffer, given by foreign researchers. The breakdown curves have been obtained which are consistent with the test results in this paper.%为了优化AlGaN/GaN HEMTs器件表面电场,提高击穿电压,本文首次提出了一种新型阶梯Al-GaN/GaN HEMTs结构.新结构利用AlGaN/GaN异质结形成的2DEG浓度随外延AlGaN层厚度降低而减小的规律,通过减薄靠近栅边缘外延的AlGaN层,使沟道2DEG浓度分区,形成栅边缘低浓度2DEG区,低的2DEG使阶梯AlGaN交界出现新的电场峰,新电场峰的出现有效降低了栅边缘的高峰电场,优化了AlGaN/GaN HEMTs器件的表面电场分布,使器件击穿电压从传统结构的446 V,提高到新结构的640 V.为了获得与实际测试结

  2. On exponential growth [of gas breakdown

    DEFF Research Database (Denmark)

    McAllister, Iain Wilson

    1991-01-01

    The agreement obtained between measured breakdown voltages and predicted breakdown values is frequently used as a means of assessing the validity of the theory/model in question. However, owing to the mathematical nature of exponential growth, it is easy to formulate a criterion that provides...

  3. Morphology and current-voltage characteristics of nanostructured pentacene thin films probed by atomic force microscopy.

    Science.gov (United States)

    Zorba, S; Le, Q T; Watkins, N J; Yan, L; Gao, Y

    2001-09-01

    Atomic force microscopy was used to study the growth modes (on SiO2, MoS2, and Au substrates) and the current-voltage (I-V) characteristics of organic semiconductor pentacene. Pentacene films grow on SiO2 substrate in a layer-by-layer manner with full coverage at an average thickness of 20 A and have the highest degree of molecular ordering with large dendritic grains among the pentacene films deposited on the three different substrates. Films grown on MoS2 substrate reveal two different growth modes, snowflake-like growth and granular growth, both of which seem to compete with each other. On the other hand, films deposited on Au substrate show granular structure for thinner coverages (no crystal structure) and dendritic growth for higher coverages (crystal structure). I-V measurements were performed with a platinum tip on a pentacene film deposited on a Au substrate. The I-V curves on pentacene film reveal symmetric tunneling type character. The field dependence of the current indicates that the main transport mechanism at high field intensities is hopping (Poole-Frenkel effect). From these measurements, we have estimated a field lowering coefficient of 9.77 x 10(-6) V-1/2 m1/2 and an ideality factor of 18 for pentacene.

  4. Low-voltage Organic Thin Film Transistors (OTFTs) with Solution-processed High-k Dielectric cum Interface Engineering

    Science.gov (United States)

    Su, Yaorong

    Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs), the high operation voltage resulting from the low gate areal capacitance of traditional SiO 2 remains a severe limitation that hinders OTFTs' development in practical applications. In this regard, developing new materials with high- k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. In this thesis, we first describe a simple solution-based method to fabricate a high-k bilayer Al2Oy/TiOx (ATO) dielectric system at low temperature. Then the dielectric properties of the ATO are characterized and discussed in detail. Furthermore, by employing the high-k ATO as gate dielectric, low-voltage copper phthalocyanine (CuPc) based OTFTs are successfully developed. Interestingly, the obtained low-voltage CuPc TFT exhibits outstanding electrical performance, which is even higher than the device fabricated on traditional low-k SiO2. The above results seem to be contradictory to the reported results due to the fact that high-k usually shows adverse effect on the device performance. This abnormal phenomenon is then studied in detail. Characterization on the initial growth shows that the CuPc molecules assemble in a "rod-like" nano crystal with interconnected network on ATO, which probably promotes the charge carrier transport, whereas, they form isolated small islands with amorphous structure on SiO2. In addition, a better metal/organic contact is observed on ATO, which benefits the charge carrier injection. Our studies suggest that the low-temperature, solution-processed high-k ATO is a promising candidate for fabrication of high-performance, low-voltage OTFTs. Furthermore, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. Hence, investigation the effects of interfaces

  5. Electrospraying and ultraviolet light curing of nanometer-thin polydimethylsiloxane membranes for low-voltage dielectric elastomer transducers

    Science.gov (United States)

    Osmani, Bekim; Töpper, Tino; Siketanc, Matej; Kovacs, Gabor M.; Müller, Bert

    2017-04-01

    Dielectric elastomer transducers (DETs) have attracted interest as actuators, sensors, and even as self-sensing actuators for applications in medicine, soft robotics, and microfluidics. To reach strains of more than 10 %, they currently require operating voltages of several hundred volts. In medical applications for artificial muscles, however, their operation is limited to a very few tens of volts, which implies high permittivity materials and thin-film structures. Such micro- or nanostructures can be prepared using electro-spraying, a cost-effective technique that allows upscaling using multiple nozzles for the fabrication of silicone films down to nanometer thickness. Deposition rates of several micrometers per hour have already been reached. It has been recently demonstrated that such membranes can be fabricated by electro-spraying and subsequent ultraviolet light irradiation. Herein, we introduce a relatively fast deposition of a dimethyl silicone copolymer fluid that contains mercaptopropyl side chains in addition to the methyl groups. Its elastic modulus was tuned with the irradiation dose of the 200 W Hg-Xe lamp. We also investigated the formation of elastomer films, using polymer concentrations in ethyl acetate of 1, 2, 5 and 10 vol%. After curing, the surface roughness was measured by means of atomic force microscopy. This instrument also enabled us to determine the average elastic modulus out of, for example, 400 nanoindentation measurements, using a spherical tip with a radius of 500 nm. The elastomer films were cured for a period of less than one minute, a speed that makes it feasible to combine electro-spraying and in situ curing in a single process step for fabricating low-voltage, multilayer DETs.

  6. RF breakdown by toroidal helicons

    Indian Academy of Sciences (India)

    S K P Tripathi; D Bora; M Mishra

    2001-04-01

    Bounded whistlers are well-known for their efficient plasma production capabilities in thin cylindrical tubes. In this paper we shall present their radio frequency (RF) breakdown and discharge sustaining capabilities in toroidal systems. Pulsed RF power in the electronmagnetohydrodynamic (EMHD) frequency regime is fed to the neutral background medium. After the breakdown stage, discharge is sustained by toroidal bounded whistlers. In these pulsed experiments the behaviour of the time evolution of the discharge could be studied in four distinct phases of RF breakdown, steady state attainment, decay and afterglow. In the steady state average electron density of ≈ 1012 per cc and average electron temperature of ≈ 20 eV are obtained at 10-3 mbar of argon filling pressure. Experimental results on toroidal mode structure, background effects and time evolution of the electron distribution function will be presented and their implications in understanding the breakdown mechanism are discussed.

  7. Breakdown characteristics of xenon HID Lamps

    Science.gov (United States)

    Babaeva, Natalia; Sato, Ayumu; Brates, Nanu; Noro, Koji; Kushner, Mark

    2009-10-01

    The breakdown characteristics of mercury free xenon high intensity discharge (HID) lamps exhibit a large statistical time lag often having a large scatter in breakdown voltages. In this paper, we report on results from a computational investigation of the processes which determine the ignition voltages for positive and negative pulses in commercial HID lamps having fill pressures of up to 20 atm. Steep voltage rise results in higher avalanche electron densities and earlier breakdown times. Circuit characteristics also play a role. Large ballast resistors may limit current to the degree that breakdown is quenched. The breakdown voltage critically depends on cathode charge injection by electric field emission (or other mechanisms) which in large part controls the statistical time lag for breakdown. For symmetric lamps, ionization waves (IWs) simultaneously develop from the bottom and top electrodes. Breakdown typically occurs when the top and bottom IWs converge. Condensed salt layers having small conductivities on the inner walls of HID lamps and on the electrodes can influence the ignition behavior. With these layers, IWs tend to propagate along the inner wall and exhibit a different structure depending on the polarity.

  8. Dielectric breakdown during Cs+ sputtering of polyvinyl chloride

    Science.gov (United States)

    Wahoud, F.; Guillot, J.; Audinot, J. N.; Bertrand, P.; Delcorte, A.; Migeon, H. N.

    2014-02-01

    Thin films of insulating polymers are sometimes analyzed by secondary ion mass spectrometry (SIMS) or by X-ray photoelectron spectroscopy (XPS) without the use of an electron gun. In this work, both SIMS and XPS have been used to study the chemical and structural modifications due to the charge effect during Cs+ sputtering of a thin film of polyvinyl chloride (PVC). The kinetic energy distribution study shows that at a small primary fluence ˜1015 Cs+ ions/cm2, the dielectric breakdown voltage of the PVC film is reached, i.e. the minimum voltage that causes a portion of an insulator to become electrically conductive. XPS study indicates that the conducting phase created in the PVC film after energetic Cs+ bombardment consists of graphitized carbon and metallic cesium clusters. After the dielectric breakdown of the film, the positive charge, previously accumulated on the surface, is neutralized through the conductive regions, which are created in the insulating film. During Cs+ sputtering of a PVC film, the chemical structure of the analyzed surface is completely modified and some ionic bonds such as CsC and CsCl are also created.

  9. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  10. Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

    Science.gov (United States)

    Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli

    2015-01-01

    We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

  11. Effect of poling time and grid voltage on phase transition and piezoelectricity of poly(vinyledene fluoride) thin films using corona poling

    Science.gov (United States)

    Mahadeva, Suresha K.; Berring, John; Walus, Konrad; Stoeber, Boris

    2013-07-01

    Corona poling was used to create piezoelectric polyvinylidene flouride (PVDF) thin films and the effects of poling time and grid voltage on the electric and physical properties of the samples was studied. Using x-ray diffraction, infrared spectroscopy, and direct measurement of piezoelectricity, the phase transition behaviour and piezoelectric constant of stretched and poled PVDF film was investigated. Results indicate that the poling time and grid voltage have no substantial influence on the phase transition behaviour of PVDF. However, they were found to have a significant effect on the piezoelectric charge constant of PVDF.

  12. Gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors with an asymmetric graphene electrode

    Directory of Open Access Journals (Sweden)

    Joonwoo Kim

    2015-09-01

    Full Text Available The gate voltage and drain current stress instabilities in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs having an asymmetric graphene electrode structure are studied. A large positive shift in the threshold voltage, which is well fitted to a stretched-exponential equation, and an increase in the subthreshold slope are observed when drain current stress is applied. This is due to an increase in temperature caused by power dissipation in the graphene/a-IGZO contact region, in addition to the channel region, which is different from the behavior in a-IGZO TFTs with a conventional transparent electrode.

  13. Transparent Pixel Circuit with Threshold Voltage Compensation Using ZnO Thin-Film Transistors for Active-Matrix Organic Light Emitting Diode Displays

    Science.gov (United States)

    Yang, Ik-Seok; Kwon, Oh-Kyong

    2009-03-01

    A transparent pixel circuit with a threshold voltage compensating scheme using ZnO thin-film transistors (TFTs) for active-matrix organic light emitting diode (AMOLED) displays is proposed. This circuit consists of five n-type ZnO TFTs and two capacitors and can compensate for the threshold voltage variation of ZnO TFTs in real time. From simulation results, the maximum deviation of the emission current of the pixel circuit with a threshold voltage variation of ±1 V is determined to be less than 10 nA. From measurement results, it is verified that the maximum deviation of measured emission currents with measurement position in a glass substrate is less than 15 nA in a higher current range, and the deviation of emission current with time is less than 3%.

  14. Frequency-dependent capacitance-voltage and conductance-voltage characteristics of low-dielectric-constant SiOC(-H) thin films deposited by using plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chang Young; Lee, Heang Seuk; Woo, Jong Kwan; Choi, Chi Kyu; Lee, Kwang Man; Hyun, Myung Taek [Jeju National University, Jeju (Korea, Republic of); Navamathavan, Rangaswamy [Chonbuk National University, Chonju (Korea, Republic of)

    2010-12-15

    We report on the electrical characteristics of the metal-insulator-semiconductor (MIS) structure of low-dielectric-constant SiOC(-H) films. SiOC(-H) thin films were deposited on p-Si(100) substrates by using a plasma-enhanced chemical vapor deposition (PECVD) system. The frequency dependence of the capacitance-voltage (C-V) and the conductance-voltage (G/{omega}-V) characteristics of the A1/SiOC(-H)/p-Si(100)/Al MIS structures was analyzed. C-V and G/{omega}-V measurements were carried out over a frequency range of 1 kHz to 5 MHz. Based on our analysis, the C-V and the G/{omega}-V characteristics confirmed that the surface states and the series resistance were important parameters that strongly influenced the electrical properties of the A1/SiOC(-H)/p-Si(100)/Al MIS structures.

  15. Electromechanical phase transition in dielectric elastomers under uniaxial tension and electrical voltage

    Science.gov (United States)

    Huang, Rui; Suo, Zhigang

    2012-02-01

    Subject to forces and voltage, a dielectric elastomer may undergo electromechanical phase transition. A phase diagram is constructed for an ideal dielectric elastomer membrane under uniaxial force and voltage, reminiscent of the phase diagram for liquid-vapor transition of a pure substance. We identify a critical point for the electromechanical phase transition. Two states of deformation (thick and thin) may coexist during the phase transition, with the mismatch in lateral stretch accommodated by wrinkling of the membrane in the thin state. The processes of electromechanical phase transition under various conditions are discussed. A reversible cycle is suggested for electromechanical energy conversion using the dielectric elastomer membrane, analogous to the classical Carnot cycle for a heat engine. The amount of energy conversion, however, is limited by failure of the dielectric elastomer due to electrical breakdown. With a particular combination of material properties, the electromechanical energy conversion can be significantly extended by taking advantage of the phase transition without electrical breakdown.

  16. Effects of controlling the interface trap densities in InGaZnO thin-film transistors on their threshold voltage shifts

    Science.gov (United States)

    Jeong, S.-W.; Lee, J.-T.; Roh, Y.

    2014-12-01

    In this paper, the threshold voltage stability characteristics of indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) are discussed. The IGZO TFTs were found to induce a parallel threshold voltage ( V th ) shift with changing field effect mobility ( μ FE ) or a sub-threshold gate voltage swing ( SS) due to various thermal annealing conditions. The IGZO TFT that was post-annealed in an O2 ambient was found to be more stable for use in oxide-based TFT devices and to have better performance characteristics, such as the on/off current ratio ( I on/off ), SS, and V th , than other TFTs did. The mechanism for improving the V th stability in the post-annealed IGZO TFT is a decrease in the number of trap sites for the electrons and the weak oxygen bonding in the IGZO thin films. The device's performance could be significantly affected by adjusting the annealing conditions. This mechanism is closely related to that of modulation annealing, where the number of localized trapped carriers and defect centers at the interface or in the channel layer are reduced.

  17. Doping dependence of laser-induced transverse thermoelectric voltages in the perovskite Nd{sub 2-x}Ce{sub x}CuO{sub 4} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xiong, Fei; Zhang, Zheng [Yunnan University, Research Institute of Engineering and Technology, Kunming (China); Kunming University of Science and Technology, Institute of Advanced Materials for Photo-Electronics, Kunming (China); Zhang, Hui; Yang, Sheng' an; Li, Dongqi; Chen, Qingming [Kunming University of Science and Technology, Institute of Advanced Materials for Photo-Electronics, Kunming (China)

    2015-08-15

    Large laser-induced thermoelectric voltages (LITVs) are measured in the electron-doped Nd{sub 2-x}Ce{sub x}CuO{sub 4} thin films grown on the vicinal-cut SrTiO{sub 3} substrates by pulsed laser deposition. The dependence of LITV signals upon the doping carrier density is investigated by changing the Ce content of the films. The optimum Ce dopant corresponding to the largest voltage is found and is attributed to the two-dimensional transport behaviors of the localized electrons. The shorter laser irradiation always induces the larger voltage signals in samples with richer Ce content, suggesting the optimum dopant level is sensitive to the wavelength of excitation source. Thus, the behaviors of LITV signals are resulted from both effects of the anisotropic thermoelectric transport and the optical properties of the thin films. The doping dependence related with an anisotropic charge transport may come from the change in carrier density and the modification in energy band configuration. (orig.)

  18. Degradation of Ultra-Thin Gate Oxide NMOSFETs under CVDT and SHE Stresses

    Institute of Scientific and Technical Information of China (English)

    HU Shi-Gang; CAO Yan-Rong; HAO Yue; MA Xiao-Hua; CHEN Chi; WU Xiao-Feng; ZHOU Qing-Jun

    2008-01-01

    Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT) stresses are studied using NMOSFET with 1.4-nm gate oxides. The degradation of device parameters and the degradation of the stress induced leakage current (SILC) under these two stresses are reported. The emphasis of this paper is on SILC and breakdown of ultra-thin-gate-oxide under these two stresses. SILC increases with stress time and several soft breakdown events occur during direct-tunnelling (DT) stress. During SHE stress, SILC firstly decreases with stress time and suddenly jumps to a high level, and no soft breakdown event is observed. For DT injection, the positive hole trapped in the oxide and hole direct-tunnelling play important roles in the breakdown.For SHE injection, it is because injected hot electrons accelerate the formation of defects and these defects formed by hot electrons induce breakdown.

  19. Electrodynamic thermal breakdown of a capacitor insulator

    Science.gov (United States)

    Emel'Yanov, O. A.

    2011-11-01

    A mechanism of the electrical breakdown is proposed for modern metal-field capacitors with the well-known property of self-healing of the breakdown strength. Upon an increase in the working voltage, the self-healing time increases to tens of microseconds, and the heating of adjacent insulator layers becomes significant. The propagating thermally activated conduction wave facilitates the enhancement of the electric field up to breakdown values. Analysis of the dynamics of electric field increase is carried out for capacitors based on polyethylene terephthalate (PET) dielectric.

  20. Realization of an 850V High Voltage Half Bridge Gate Drive IC with a New NFFP HVI Structure

    Institute of Scientific and Technical Information of China (English)

    Ming Qiao; Hong-Jie Wang; Ming-Wei Duan; Jian Fang; Bo Zhang; Zhao-Ji Li

    2007-01-01

    A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is experimentally realized using a thin epitaxial BCD process. Compared with the MFFP HVI structure,the proposed NFFP HVI structure shows simpler process and lower cost. The high side offset voltage in the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the selfshielding structure.

  1. Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

    Science.gov (United States)

    Petti, Luisa; Pattanasattayavong, Pichaya; Lin, Yen-Hung; Münzenrieder, Niko; Cantarella, Giuseppe; Yaacobi-Gross, Nir; Yan, Feng; Tröster, Gerhard; Anthopoulos, Thomas D.

    2017-03-01

    We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V-1 s-1 and 0.013 cm2 V-1 s-1, respectively, current on/off ratio in the range 102-104, and maximum operating voltages between -3.5 and -10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as -3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

  2. Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

    KAUST Repository

    Petti, Luisa

    2017-03-17

    We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V−1 s−1 and 0.013 cm2 V−1 s−1, respectively, current on/off ratio in the range 102–104, and maximum operating voltages between −3.5 and −10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as −3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

  3. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  4. Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

    Science.gov (United States)

    Kizu, Takio; Aikawa, Shinya; Nabatame, Toshihide; Fujiwara, Akihiko; Ito, Kazuhiro; Takahashi, Makoto; Tsukagoshi, Kazuhito

    2016-07-01

    We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm2/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (VO) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense VO in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

  5. Current-voltage characteristics with several threshold currents in insulating low-doped La1-xSrxMnO3 (x=0.10) thin films

    Institute of Scientific and Technical Information of China (English)

    ZHAO Kun; FENG Jiafeng; HE Meng; L(U) Huibin; JIN Kuijuan; ZHOU Yueliang; YANG Guozhen3

    2008-01-01

    The current-induced resistive switching behavior in the micron-scale pillars of low-doped La0.9Sr0.1MnO3 thin films using laser molecular-beam epitaxy was reported. It was demonstrated that the current-voltage curves at 120 K showed hysteresis with several threshold currents corresponding to the switching in resistance to metastable low resistance states, and finally, four closed loops were formed. A mode was proposed, which was based on the low-temperature canted antiferromagnetism ordering for a lightly doped insulating regime.

  6. Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene) with hafnium oxide as the gate dielectric

    OpenAIRE

    Liu, YR; Deng, LF; Yao, RH; Lai, PT

    2010-01-01

    The effects of hafnium oxide $(hbox{HfO}-{2})$ gate dielectric annealing treatment in oxygen $(hbox{O}-{2})$ and ammonia $(hbox{NH}-{3})$ ambient on the electrical performance of polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are investigated. The PTFTs with $hbox{HfO}-{2}$ gate dielectric and also octadecyltrichlorosilane surface modification, prepared by spin-coating process, exhibit good performance, such as a small threshold voltage of $-$0.5 V and an operating volt...

  7. Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

    Science.gov (United States)

    Ghaffarzadeh, Khashayar; Nathan, Arokia; Robertson, John; Kim, Sangwook; Jeon, Sanghun; Kim, Changjung; Chung, U.-In; Lee, Je-Hun

    2010-09-01

    Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (ΔVT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths.

  8. Influence of deposition temperature and bias voltage on the crystalline phase of Er{sub 2}O{sub 3} thin films deposited by filtered cathodic arc

    Energy Technology Data Exchange (ETDEWEB)

    Adelhelm, Christoph, E-mail: christoph.adelhelm@ipp.mpg.de [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Pickert, Thomas [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Koch, Freimut, E-mail: freimut.koch@ipp.mpg.de [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Balden, Martin; Jahn, Stephan [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Rinke, Monika [Forschungszentrum Karlsruhe, Institute for Materials Research I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Maier, Hans [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany)

    2011-10-01

    Er{sub 2}O{sub 3} thin films on Eurofer steel substrates were produced by a filtered cathodic arc device, varying the substrate temperature (RT - 700 deg. C) and sample bias (0 to -450 V). The crystallographic phase was analyzed by X-ray diffraction and Raman spectroscopy. Deposition at {>=}600 deg. C without bias lead to solely formation of the cubic Er{sub 2}O{sub 3} phase. Thin films of the uncommon, monoclinic B-phase were prepared with a negative bias voltage of {>=}100 V at RT, and at temperatures {<=}500 deg. C for -250 V bias. The B-phase films exhibit a strongly textured film structure. Residual stress measurements show high compressive stress for B-phase films deposited at RT.

  9. Thermally grown thin nitride films as a gate dielectric

    CERN Document Server

    Shin, H C; Hwang, T K; Lee, K R

    1998-01-01

    High-quality very thin films ( <=6 nm) of silicon nitride were thermally grown in ammonia atmosphere with an IR (Infrared) gold image furnace. As-grown nitride film was analyzed using AES(Auger Emission Spectroscopy). Using MIS (Metal-Insulator-Semiconductor) devices, the growth rate was calculated using CV (Capacitance-Voltage) measurements and various electrical characteristics were obtained using CV, IV (Current-Voltage), trapping, time-dependent breakdown, high-field stress, constant current injection stress and dielectric breakdown techniques. These characteristics showed that very thin thermal silicon nitride films can be used as gate dielectrics for future highly scaled-down ULSI (Ultra Large Scale Integrated) devices, especially for EEPROM (Electrically Erasable and Programmable ROM)'s.

  10. Applications of ultra-short pulsed laser ablation: thin films deposition and fs/ns dual-pulse laser-induced breakdown spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Teghil, R; De Bonis, A; Galasso, A [Dipartimento di Chimica, Universita della Basilicata, Via N. Sauro 85, 85100 Potenza (Italy); Santagata, A; Albano, G; Villani, P; Spera, D; Parisi, G P [CNR-IMIP, Unita di Potenza, Via S. Loja, 85050 Tito Scalo (Italy)], E-mail: roberto.teghil@unibas.it

    2008-10-15

    In this paper, we report a survey of two of the large number of possible practical applications of the laser ablation performed by an ultra-short pulse laser, namely pulsed laser deposition (PLD) and fs/ns dual-pulse laser-induced breakdown spectroscopy (DP-LIBS). These applications differ from those using just longer pulsed lasers as a consequence of the distinctive characteristics of the plasma produced by ultra-short laser beams. The most important feature of this plasma is the large presence of particles with nanometric size which plays a fundamental role in both applications.

  11. Threshold criteria for undervoltage breakdown

    Science.gov (United States)

    Cooley, James E.; Choueiri, Edgar Y.

    2008-05-01

    The conditions under which an externally supplied pulse of electrons will induce breakdown in an undervoltaged, low-gain discharge gap are experimentally and theoretically explored. The minimum number of injected electrons required to achieve breakdown in a parallel-plate gap is measured in argon at pd values of 3-10 Torr m using ultraviolet laser pulses to photoelectrically release electrons from the cathode. This value was found to scale inversely with voltage at constant pd and with pressure within the parameter range explored. A dimensionless theoretical description of the phenomenon is formulated and numerically solved. It is found that a significant fraction of the charge on the plates must be injected for breakdown to be achieved at low gain. It is also found that fewer electrons are required as the gain due to electron-impact ionization (α process) is increased, or as the sensitivity of the α process to electric field is enhanced by increasing the gas pressure. A predicted insensitivity to ion mobility implies that the breakdown is determined during the first electron avalanche when space-charge distortion is greatest.

  12. The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses

    Institute of Scientific and Technical Information of China (English)

    Wang Yan-Gang; Xu Ming-Zhen; Tan Chang-Hua; Zhang Zhang J.F; Duan Xiao-Rong

    2005-01-01

    The conduction mechanism of stress induced leakage current (SILC) through 2nm gate oxide is studied over a gate voltage range between 1.7V and stress voltage under constant voltage stress (CVS). The simulation results show that the SILC is formed by trap-assisted tunnelling (TAT) process which is dominated by oxide traps induced by high field stresses. Their energy levels obtained by this work are approximately 1.9eV from the oxide conduction band, and the traps are believed to be the oxygen-related donor-like defects induced by high field stresses. The dependence of the trap density on stress time and oxide electric field is also investigated.

  13. Laser-induced transverse voltage effect and thermopower anisotropy of c-axis inclined Ca3Co4O9 thin film

    Science.gov (United States)

    Song, Shijin; Yu, Lan; Hu, Jianli; Liu, Anan; Zhong, Yi

    2017-09-01

    Ca3Co4O9+δ thin films were prepared on 5° vicinal cut LaAlO3 (001) substrates by pulsed laser deposition and subsequently annealed at various temperatures. Under the irradiation energy density of 8 mJ cm-2, a large laser-induced transverse voltage (LITV) signal with 6.4 V peak voltage and 33 ns rising edge was obtained in the 800 °C annealed film, which was nearly 11 times larger and 2 times faster than that in the as-grown film without annealing (0.54 V, 100 ns). The results suggested that the significant enhancement of LITV by annealing was mainly owing to the improved crystallization and electrical transport property. Based on the LITV results and heat flow model, a nearly intrinsic Seebeck coefficient anisotropy Δ S = | S ab- S c | ≈ 33.4 μV K-1 was obtained, demonstrating the c-axis inclined Ca3Co4O9+δ thin film with large thermopower anisotropy has great application potentials in high sensitive and fast response thermoelectric detectors.

  14. Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing

    Energy Technology Data Exchange (ETDEWEB)

    Albin, D.; del Cueto, J.

    2011-03-01

    In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

  15. Study on the drift mobility of carriers in vitreous Se thin film by the voltage-pulse injection

    Energy Technology Data Exchange (ETDEWEB)

    Lee, J.J.; Kim, I.H.; Choi, K.W.; Choi, C.K. (Gyeonsang National Univ., Jinju (Republic of Korea))

    1982-05-01

    The drift mobility of carriers in the vitreous Se thin films were measured by the Haynes-Schokley method. It had been shown that the hole mobility was about 0.83 cm/sup 3//V-sec and the drift velocity showed no time dependence. It had also been shown that the value of Pool-Frenkel parameter was approximately 2 from the I-V curve.

  16. PE/PVC materials in HV cable jackets. Breakdown voltage of PE/PVC materials; PE/PVC-Materialien in Aussenmaenteln von Hochspannungskabeln. Durchschlagspannung von PE/PVC-Materialien

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Uwe; Xu, Liang; Schufft, Wolfgang [Technische Univ. Chemnitz-Zwickau, Chemnitz (Germany). Fakultaet fuer Elektrotechnik und Informationstechnik

    2010-12-13

    Cables are spaced across increasingly longer distances in HV engineering. Integration of offshore wind farms and the construction of new transmission and distribution grids would be impossible without cables. Voltages and overvoltages in operation are managed according to international standards using overvoltage protection systems. However, there may be instances in which voltage occur that exceed the strength of the cable jacket. (orig.)

  17. Numerical Study on Atmospheric Pressure DBD in Helium: Single-breakdown and Multi-breakdown Discharges%Numerical Study on Atmospheric Pressure DBD in Helium: Single-breakdown and Multi-breakdown Discharges

    Institute of Scientific and Technical Information of China (English)

    王小华; 杨爱军; 荣命哲; 刘定新

    2011-01-01

    A 1-D fluid model for homogeneous dielectric barrier discharge (DBD) in helium is presented, aimed at unraveling the spatial-temporal characteristics of two basic discharge regimes: single-breakdown and multi-breakdown discharges. Discharge currents, gap voltages, charge densities, electron temperature and electric field profiles of the two regimes make it clear that these two regimes are qualitatively different. It is found that the multi-breakdown discharge has a more homogeneous flux on dielectrics compared to the single-breakdown discharge.

  18. Thermal and Electrical Effects of Partial Shade in Monolithic Thin-Film Photovoltaic Modules: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Silverman, Timothy J.; Deceglie, Michael G.; Sun, Xingshu; Garris, Rebekah L.; Alam, Muhammad Ashraful; Deline, Chris; Kurtz, Sarah

    2015-09-02

    Photovoltaic cells can be damaged by reverse bias stress, which arises during service when a monolithically integrated thin-film module is partially shaded. We introduce a model for describing a module's internal thermal and electrical state, which cannot normally be measured. Using this model and experimental measurements, we present several results with relevance for reliability testing and module engineering: Modules with a small breakdown voltage experience less stress than those with a large breakdown voltage, with some exceptions for modules having light-enhanced reverse breakdown. Masks leaving a small part of the masked cells illuminated can lead to very high temperature and current density compared to masks covering entire cells.

  19. Thermal and Electrical Effects of Partial Shade in Monolithic Thin-Film Photovoltaic Modules

    Energy Technology Data Exchange (ETDEWEB)

    Silverman, Timothy J.; Deceglie, Michael G.; Sun, Xingshu; Garris, Rebekah L.; Alam, Muhammad Ashraful; Deline, Chris; Kurtz, Sarah

    2015-06-14

    Photovoltaic cells can be damaged by reverse bias stress, which arises during service when a monolithically integrated thin-film module is partially shaded. We introduce a model for describing a module's internal thermal and electrical state, which cannot normally be measured. Using this model and experimental measurements, we present several results with relevance for reliability testing and module engineering: Modules with a small breakdown voltage experience less stress than those with a large breakdown voltage, with some exceptions for modules having light-enhanced reverse breakdown. Masks leaving a small part of the masked cells illuminated can lead to very high temperature and current density compared to masks covering entire cells.

  20. Low-voltage bendable pentacene thin-film transistor with stainless steel substrate and polystyrene-coated hafnium silicate dielectric.

    Science.gov (United States)

    Yun, Dong-Jin; Lee, Seunghyup; Yong, Kijung; Rhee, Shi-Woo

    2012-04-01

    The hafnium silicate and aluminum oxide high-k dielectrics were deposited on stainless steel substrate using atomic layer deposition process and octadecyltrichlorosilane (OTS) and polystyrene (PS) were treated improve crystallinity of pentacene grown on them. Besides, the effects of the pentacene deposition condition on the morphologies, crystallinities and electrical properties of pentacene were characterized. Therefore, the surface treatment condition on dielectric and pentacene deposition conditions were optimized. The pentacene grown on polystyrene coated high-k dielectric at low deposition rate and temperature (0.2-0.3 Å/s and R.T.) showed the largest grain size (0.8-1.0 μm) and highest crystallinity among pentacenes deposited various deposition conditions, and the pentacene TFT with polystyrene coated high-k dielectric showed excellent device-performance. To decrease threshold voltage of pentacene TFT, the polystyrene-thickness on high-k dielectric was controlled using different concentration of polystyrene solution. As the polystyrene-thickness on hafnium silicate decreases, the dielectric constant of polystyrene/hafnium silicate increases, while the crystallinity of pentacene grown on polystyrene/hafnium silicate did not change. Using low-thickness polystyrene coated hafnium silicate dielectric, the high-performance and low voltage operating (1 × 10(4)) and complementary inverter (DC gains, ~20) could be fabricated.

  1. Critical current density and ac harmonic voltage generation in YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin films by the screening technique

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Lopez, Israel O., E-mail: iperez@mda.cinvestav.m [Applied Physics Department, Cinvestav Unidad Merida, Km 6 Ant., Carretera a Progreso, A.P. 73, C.P. 97310 Merida, Yucatan (Mexico); Gamboa, Fidel; Sosa, Victor [Applied Physics Department, Cinvestav Unidad Merida, Km 6 Ant., Carretera a Progreso, A.P. 73, C.P. 97310 Merida, Yucatan (Mexico)

    2010-12-15

    The temperature and field dependence of harmonics in voltage V{sub n}=V{sub n}{sup '}-iV{sub n}{sup ''} using the screening technique have been measured for YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} superconducting thin films. Using the Sun model we obtained the curves for the temperature-dependent critical current density J{sub c}(T). In addition, we applied the criterion proposed by Acosta et al. to compute J{sub c}(T). Also, we made used of the empirical law J{sub c{proportional_to}}(1-T/T{sub c}){sup n} as an input in our calculations to reproduce experimental harmonic generation up to the fifth harmonic. We found that most models fit well the fundamental voltage but higher harmonics are poorly reproduced. Such behavior suggests the idea that higher harmonics contain information concerning complex processes like flux creep or thermally assisted flux flow.

  2. Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage

    Energy Technology Data Exchange (ETDEWEB)

    Kizu, Takio, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Tsukagoshi, Kazuhito, E-mail: KIZU.Takio@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Aikawa, Shinya [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Research Institute for Science and Technology, Kogakuin University, Hachioji, Tokyo 192-0015 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Fujiwara, Akihiko [Department of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337 (Japan); Ito, Kazuhiro; Takahashi, Makoto [Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

    2016-07-28

    We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm{sup 2}/V s) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (V{sub O}) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense V{sub O} in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics.

  3. dc breakdown conditioning and breakdown rate of metals and metallic alloys under ultrahigh vacuum

    CERN Document Server

    Descoeudres, A; Calatroni, S; Taborelli, M; Wuensch, W

    2009-01-01

    RF accelerating structures of the Compact Linear Collider (CLIC) require a material capable of sustaining high electric field with a low breakdown rate and low induced damage. Because of the similarity of many aspects of DC and RF breakdown, a DC breakdown study is underway at CERN in order to test candidate materials and surface preparations, and have a better understanding of the breakdown mechanism under ultra-high vacuum in a simple setup. Conditioning speeds and breakdown fields of several metals and alloys have been measured. The average breakdown field after conditioning ranges from 100 MV/m for Al to 850 MV/m for stainless steel, and is around 170 MV/m for Cu which is the present base-line material for CLIC structures. The results indicate clearly that the breakdown field is limited by the cathode. The presence of a thin cuprous oxide film at the surface of copper electrodes significantly increases the breakdown field. On the other hand, the conditioning speed of Mo is improved by removing oxides at t...

  4. Voltage assisted asymmetric nanoscale wear on ultra-smooth diamond like carbon thin films at high sliding speeds

    Science.gov (United States)

    Rajauria, Sukumar; Schreck, Erhard; Marchon, Bruno

    2016-01-01

    The understanding of tribo- and electro-chemical phenomenons on the molecular level at a sliding interface is a field of growing interest. Fundamental chemical and physical insights of sliding surfaces are crucial for understanding wear at an interface, particularly for nano or micro scale devices operating at high sliding speeds. A complete investigation of the electrochemical effects on high sliding speed interfaces requires a precise monitoring of both the associated wear and surface chemical reactions at the interface. Here, we demonstrate that head-disk interface inside a commercial magnetic storage hard disk drive provides a unique system for such studies. The results obtained shows that the voltage assisted electrochemical wear lead to asymmetric wear on either side of sliding interface. PMID:27150446

  5. Strongly nonlinear dynamics of electrolytes in large ac voltages

    CERN Document Server

    Olesen, Laurits H; Bruus, Henrik

    2009-01-01

    We study the response of a model micro-electrochemical cell to a large ac voltage of frequency comparable to the inverse cell relaxation time. To bring out the basic physics, we consider the simplest possible model of a symmetric binary electrolyte confined between parallel-plate blocking electrodes, ignoring any transverse instability or fluid flow. We analyze the resulting one-dimensional problem by matched asymptotic expansions in the limit of thin double layers and extend previous work into the strongly nonlinear regime, which is characterized by two novel features - significant salt depletion in the electrolyte near the electrodes and, at very large voltage, the breakdown of the quasi-equilibrium structure of the double layers. The former leads to the prediction of "ac capacitive desalination", since there is a time-averaged transfer of salt from the bulk to the double layers, via oscillating diffusion layers. The latter is associated with transient diffusion limitation, which drives the formation and co...

  6. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

    Science.gov (United States)

    Xu, Hao; Yang, Hong; Luo, Wei-Chun; Xu, Ye-Feng; Wang, Yan-Rong; Tang, Bo; Wang, Wen-Wu; Qi, Lu-Wei; Li, Jun-Feng; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

    2016-08-01

    The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it/N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

  7. Study of nanometric thin pyrolytic carbon films for explosive electron emission cathode in high-voltage planar diode

    Energy Technology Data Exchange (ETDEWEB)

    Baryshevsky, Vladimir; Belous, Nikolai; Gurinovich, Alexandra; Gurnevich, Evgeny [Research Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Str. 11, Minsk 220030 (Belarus); Kuzhir, Polina, E-mail: polina.kuzhir@gmail.com [Research Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Str. 11, Minsk 220030 (Belarus); National Research Tomsk State University, 36 Lenin Prospekt, Tomsk 634050 (Russian Federation); Maksimenko, Sergey [Research Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Str. 11, Minsk 220030 (Belarus); National Research Tomsk State University, 36 Lenin Prospekt, Tomsk 634050 (Russian Federation); Molchanov, Pavel; Shuba, Mikhail [Research Institute for Nuclear Problems, Belarusian State University, Bobruiskaya Str. 11, Minsk 220030 (Belarus); Roddatis, Vladimir [CIC energiGUNE, Albert Einstein 48, 01510 Minano, Alava (Spain); Institut für Materialphysik of Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Kaplas, Tommi; Svirko, Yuri [Institute of Photonics, University of Eastern Finland, P.O. Box 111, Joensuu FI-80101 (Finland)

    2015-04-30

    We report on an experimental study of explosive electron emission properties of cathode made by nanometric thin pyrolytic carbon (PyC) films (2–150 nm) deposited on Cu substrate via methane-based chemical vapor deposition. High current density at level of 300 A/cm{sup 2} in 5 · 10{sup −5} Pa vacuum has been observed together with very stable explosive emission from the planar cathode. The Raman spectroscopy investigation proves that the PyC films remain the same after seven shots. According to the optical image analysis of the cathode before and after one and seven shots, we conclude that the most unusual and interesting feature of using the PyC films/Cu cathode for explosive emission is that the PyC layer on the top of the copper target prevents its evaporation and oxidation, which leads to higher emission stability compared to conventional graphitic/Cu cathodes, and therefore results in longer working life. - Highlights: • Explosive electron emission from pyrolytic carbon (PyC) cathode is reported. • We observe high current density, 300 A/cm{sup 2}, and stable emission parameters. • PyC integrity ensures a high application potential for high current electronics.

  8. Fractal properties of LED avalanche breakdown

    Directory of Open Access Journals (Sweden)

    Antonina S. Shashkina

    2016-12-01

    Full Text Available The conventional model of the processes occurring in the course of a p–n-junction's partial avalanche breakdown has been analyzed in this paper. Microplasma noise spectra of industrially produced LEDs were compared with those predicted by the model. It was established that the data obtained experimentally on reverse-biased LEDs could not be described in terms of this model. The degree to which the fractal properties were pronounced was shown to be variable by changing the reverse voltage. The discovered fractal properties of microplasma noise can serve as the basis for further studies which are bound to explain the breakdown characteristics of real LEDs and to correct the conventional model of p–n-junction's avalanche breakdown.

  9. Deoxyribonucleic acid-based hybrid thin films for potential application as high energy density capacitors

    Science.gov (United States)

    Joyce, Donna M.; Venkat, Narayanan; Ouchen, Fahima; Singh, Kristi M.; Smith, Steven R.; Grabowski, Christopher A.; Terry Murray, P.; Grote, James G.

    2014-03-01

    Deoxyribonucleic acid (DNA) based hybrid films incorporating sol-gel-derived ceramics have shown strong promise as insulating dielectrics for high voltage capacitor applications. Our studies of DNA-CTMA (cetyltrimethylammonium) complex/sol-gel ceramic hybrid thin film devices have demonstrated reproducibility and stability in temperature- and frequency-dependent dielectric properties with dielectric constant k ˜ 5.0 (1 kHz), as well as reliability in DC voltage breakdown measurements, attaining values consistently in the range of 300-350 V/μm. The electrical/dielectric characteristics of DNA-CTMA films with sol-gel-derived ceramics were examined to determine the critical energy storage parameters such as voltage breakdown and dielectric constant.

  10. A novel thin drift region device with field limiting rings in substrate

    Institute of Scientific and Technical Information of China (English)

    Li Qi; Zhu Jin-Luan; Wang Wei-Dong; Wei Xue-Ming

    2011-01-01

    A novel thin drift region device with heavily doped N+ rings embedded in the substrate is reported,which is called the field limiting rings in substrate lateral double-diffused MOS transistor (SFLR LDMOS).In the SFLR LDMOS,the peak of the electric field at the main junction is reduced due to the transfer of the voltage from the main junction to other field limiting ring junctions,so the vertical electric field is improved significantly.A model of the breakdown voltage is developed,from which optimal spacing is obtained.The numerical results indicate that the breakdown voltage of the device proposed is increased by 76% in comparison to that of the conventional LDMOS.

  11. Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays

    Science.gov (United States)

    Fan, Ching-Lin; Lai, Hui-Lung; Chang, Jyu-Yu

    2010-05-01

    In this paper, we propose a novel pixel design and driving method for active-matrix organic light-emitting diode (AM-OLED) displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs). The proposed threshold voltage compensation circuit, which comprised five transistors and two capacitors, has been verified to supply uniform output current by simulation work using the automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE) simulator. The driving scheme of this voltage programming method includes four periods: precharging, compensation, data input, and emission. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<1%) and high output current. The proposed pixel circuit shows high immunity to the threshold voltage deviation characteristics of both the driving poly-Si TFT and the OLED.

  12. Breakdown Study in terms of Gas Temperature

    Science.gov (United States)

    Jung, S. J.; Uhm, H. S.

    2001-10-01

    This paper accounts for the corona discharge which is applied in air pollution purification. It will show elimination of the air pollution produced by the energy use and the optimization of the energy efficiency. The corona discharge forms the plasma state from the gas. Consequently, molecules and atoms in a weakly ionized plasma turn into the excited states, producing active chemical radicals and activating strong chemical reactions. Unburned particles may be generated in imperfect combustion. These particles will convert into harmless gases by activation of these chemical radicals. Outer electrode is composed of stainless steel or copper pipe, and inner electrode is composed of stainless steel stick. Direct current is used as power source. At an atmospheric pressure we measured breakdown voltage for the gases (i.e. nitrogen, air, oxygen) in terms of the radius ratio of two coaxial electrodes at gas temperature ranged from 300K to 1000K. The experimental data are compared with theoretical breakdown voltage.

  13. Tailored Voltage Waveform Deposition of Microcrystalline Silicon Thin Films from Hydrogen-Diluted Silane and Silicon Tetrafluoride: Optoelectronic Properties of Films

    Science.gov (United States)

    Johnson, Erik V.; Pouliquen, Sylvain; Delattre, Pierre-Alexandre; Booth, Jean-Paul

    2012-08-01

    The use of tailored voltage waveforms (TVW's) to excite a plasma for the deposition of thin films of hydrogenated microcrystalline silicon (µc-Si:H) has been shown to be an effective technique to decouple mean ion bombardment energy (IBE) from injected power. In this work, we examine the changes in material properties controlled by this technique through Raman scattering and spectroscopic ellipsometry for films deposited from H2-diluted SiH4, and we examine the electrical properties of such films using temperature dependent conductivity. As the laboratory-scale deposition system used had neither a load lock nor an oxygen filter in the H2 line, accidental O-doping was observed for the µc-Si:H films. We investigated suppression of this doping by adding varying amounts of SiF4, and using an SiF4/Ar pre-etch step to clean the reactor. This technique is shown to be effective in decreasing the accidental doping of the films, and intrinsic µc-Si:H films are produced with an activation energy of up to 0.55 eV. As well, an important difference in the amorphous-to-microcrystalline transition is observed once SiF4 is included in the gas mixture.

  14. Low driving voltage Mach-Zehnder interference modulator constructed from an electro-optic polymer on ultra-thin silicon with a broadband operation.

    Science.gov (United States)

    Sato, Hiromu; Miura, Hiroki; Qiu, Feng; Spring, Andrew M; Kashino, Tsubasa; Kikuchi, Takamasa; Ozawa, Masaaki; Nawata, Hideyuki; Odoi, Keisuke; Yokoyama, Shiyoshi

    2017-01-23

    An electro-optic (EO) polymer waveguide using an ultra-thin silicon hybrid has been designed and fabricated. The silicon core has the thickness of 50 nm and a width of 5 μm. The waveguide was completed after covering the cladding with the high temperature stable EO polymer. We have demonstrated a low half-wavelength voltage of 0.9 V at the wavelength of 1.55 μm by using a Mach-Zehnder interference modulator with TM mode operation. The measured modulation corresponded to an effective in-device EO coefficient of 165 pm/V. By utilizing the traveling-wave electrode on the modulator the high-frequency response was tested up to 40 GHz. The 3 dB modulation bandwidth was measured to be 23 GHz. In addition, the high frequency sideband spectral measurement revealed that a linear response of the modulation index against the RF power was confirmed up to 40 GHz signal.

  15. Ion transport in thin cell electrodeposition: modelling three-ion electrolytes in dense branched morphology under constant voltage and current conditions

    Energy Technology Data Exchange (ETDEWEB)

    Marshall, G. [Courant Institute of Mathematical Sciences, New York University, New York, NY 10012 (United States) and Laboratorio de Sistemas Complejos, Departamento de Computacion, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, 1428 Buenos Aires (Argentina)]. E-mail: marshalg@mail.retina.ar; Molina, F.V. [INQUIMAE, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, 1428 Buenos Aires (Argentina); Soba, A. [Laboratorio de Sistemas Complejos, Departamento de Computacion, Facultad de Ciencias Exactas y Naturales, Universidad de Buenos Aires, 1428 Buenos Aires (Argentina)

    2005-05-30

    Electrochemical deposition (ECD) and spatially coupled bipolar electrochemistry (SCBE) experiments in thin-layer cells are known to produce complex ion transport patterns concomitantly with the growth of dendrite-like structures. Here we present a macroscopic model of ECD and SCBE with a three-ion electrolyte in conditions of dense branched morphology. The model describes ion transport and deposit growth through the one-dimensional Nernst-Planck equations for ion transport, the Poisson equation for the electric field and, for ECD, a growth law for deposit evolution. We present numerical simulations for typical electrochemical deposition experiments: dense branched morphology in ECD and the incubation period in SCBE. In ECD the model predicts cation, anion and proton concentration profiles, electric field variations and deposit growth speed, that are in qualitative agreement with experiments; the predicted evolution and collision of the deposit and proton fronts reveal a time scaling close to those observed in experiments. In SCBE, the model predicts that the inverse of the incubation time scales linearly with the applied voltage. Such behaviour was observed in experiments.

  16. Surface of Alumina Films after Prolonged Breakdowns in Galvanostatic Anodization

    Directory of Open Access Journals (Sweden)

    Christian Girginov

    2011-01-01

    Full Text Available Breakdown phenomena are investigated at continuous isothermal (20∘C and galvanostatic (0.2–5 mA cm−2 anodizing of aluminum in ammonium salicylate in dimethylformamide (1 M AS/DMF electrolyte. From the kinetic (-curves, the breakdown voltage ( values are estimated, as well as the frequency and amplitude of oscillations of formation voltage ( at different current densities. The surface of the aluminum specimens was studied using atomic force microscopy (AFM. Data on topography and surface roughness parameters of the electrode after electric breakdowns are obtained as a function of anodization time. The electrode surface of anodic films, formed with different current densities until the same charge density has passed (2.5 C cm−2, was assessed. Results are discussed on the basis of perceptions of avalanche mechanism of the breakdown phenomena, due to the injection of electrons and their multiplication in the volume of the film.

  17. Kinetics of nanopore fabrication during controlled breakdown of dielectric membranes in solution

    Science.gov (United States)

    Briggs, Kyle; Charron, Martin; Kwok, Harold; Le, Timothea; Chahal, Sanmeet; Bustamante, José; Waugh, Matthew; Tabard-Cossa, Vincent

    2015-02-01

    Nanopore fabrication by controlled breakdown (CBD) overcomes many of the challenges of traditional nanofabrication techniques, by reliably forming solid-state nanopores sub-2 nm in size in a low-cost and scalable way for nucleic acid analysis applications. Herein, the breakdown kinetics of thin dielectric membranes immersed in a liquid environment are investigated in order to gain deeper insights into the mechanism of solid-state nanopore formation by high electric fields. For various fabrication conditions, we demonstrate that nanopore fabrication time is Weibull-distributed, in support of the hypothesis that the fabrication mechanism is a stochastic process governed by the probability of forming a connected path across the membrane (i.e. a weakest-link problem). Additionally, we explore the roles that various ions and solvents play in breakdown kinetics, revealing that asymmetric pH conditions across the membrane can significantly affect nanopore fabrication time for a given voltage polarity. These results, characterizing the stochasticity of the nanopore fabrication process and highlighting the parameters affecting it, should assist researchers interested in exploiting the potential of CBD for nanofluidic channel fabrication, while also offering guidance towards the conceivable manufacturing of solid-state nanopore-based technologies for DNA sequencing applications.

  18. Pixel structures to compensate nonuniform threshold voltage and mobility of polycrystalline silicon thin-film transistors using subthreshold current for large-size active matrix organic light-emitting diode displays

    Science.gov (United States)

    Na, Jun-Seok; Kwon, Oh-Kyong

    2014-01-01

    We propose pixel structures for large-size and high-resolution active matrix organic light-emitting diode (AMOLED) displays using a polycrystalline silicon (poly-Si) thin-film transistor (TFT) backplane. The proposed pixel structures compensate the variations of the threshold voltage and mobility of the driving TFT using the subthreshold current. The simulated results show that the emission current error of the proposed pixel structure B ranges from -2.25 to 2.02 least significant bit (LSB) when the variations of the threshold voltage and mobility of the driving TFT are ±0.5 V and ±10%, respectively.

  19. Development of Amorphous/Microcrystalline Silicon Tandem Thin-Film Solar Modules with Low Output Voltage, High Energy Yield, Low Light-Induced Degradation, and High Damp-Heat Reliability

    Directory of Open Access Journals (Sweden)

    Chin-Yi Tsai

    2014-01-01

    Full Text Available In this work, tandem amorphous/microcrystalline silicon thin-film solar modules with low output voltage, high energy yield, low light-induced degradation, and high damp-heat reliability were successfully designed and developed. Several key technologies of passivation, transparent-conducting-oxide films, and cell and segment laser scribing were researched, developed, and introduced into the production line to enhance the performance of these low-voltage modules. A 900 kWp photovoltaic system with these low-voltage panels was installed and its performance ratio has been simulated and projected to be 92.1%, which is 20% more than the crystalline silicon and CdTe counterparts.

  20. Time-lags before breakdown in the DC spark system

    CERN Document Server

    Descoeudres, A

    2008-01-01

    The voltage time evolution in the DC spark system has been measured together with the current signal during a discharge. The voltage rise-time, given by the circuitry and the HV relay is measured to be of the order of 100 ns. Measurement of the time-lags for breakdown reveals a material dependent behaviour; two populations centered at 0.1 s and at 1.3 ms are detected on stainless steel whereas on tungsten carbide only fast occurring sparks with sharp distribution around 0.1 s are found. The two populations indicate the presence of two different breakdown mechanisms.

  1. Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

    Directory of Open Access Journals (Sweden)

    Nazek El-Atab

    2013-10-01

    Full Text Available A thin-film ZnO(n/Si(p+ heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM AC-in-Air method in addition to conductive AFM (CAFM were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON ∼3.5 V. The measured breakdown voltage (VBR and electric field (EBR for this diode are 5.4 V and 3.86 MV/cm, respectively.

  2. Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba{sub 0.8}Sr{sub 0.2})TiO{sub 3} heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Sirikulrat, N., E-mail: scphi003@chiangmai.ac.th

    2012-02-29

    The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J= N-Ary-Summation {sub m}C{sub m}V{sup m} where C{sub m} is the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. - Highlights: Black-Right-Pointing-Pointer The n-n isotype heterojunction diodes of ceramic oxide semiconductors were prepared. Black-Right-Pointing-Pointer The current density-voltage (J-V) curves were analyzed using the Power Series (PS). Black-Right-Pointing-Pointer The J-V characteristics were found to be well described with PS at low order. Black-Right-Pointing-Pointer The thermionic emission and diode leakage currents were comparatively discussed.

  3. Electrical breakdown detection system for dielectric elastomer actuators

    Science.gov (United States)

    Ghilardi, Michele; Busfield, James J. C.; Carpi, Federico

    2017-04-01

    Electrical breakdown of dielectric elastomer actuators (DEAs) is an issue that has to be carefully addressed when designing systems based on this novel technology. Indeed, in some systems electrical breakdown might have serious consequences, not only in terms of interruption of the desired function but also in terms of safety of the overall system (e.g. overheating and even burning). The risk for electrical breakdown often cannot be completely avoided by simply reducing the driving voltages, either because completely safe voltages might not generate sufficient actuation or because internal or external factors might change some properties of the actuator whilst in operation (for example the aging or fatigue of the material, or an externally imposed deformation decreasing the distance between the compliant electrodes). So, there is the clear need for reliable, simple and cost-effective detection systems that are able to acknowledge the occurrence of a breakdown event, making DEA-based devices able to monitor their status and become safer and "selfaware". Here a simple solution for a portable detection system is reported that is based on a voltage-divider configuration that detects the voltage drop at the DEA terminals and assesses the occurrence of breakdown via a microcontroller (Beaglebone Black single-board computer) combined with a real-time, ultra-low-latency processing unit (Bela cape an open-source embedded platform developed at Queen Mary University of London). The system was used to both generate the control signal that drives the actuator and constantly monitor the functionality of the actuator, detecting any breakdown event and discontinuing the supplied voltage accordingly, so as to obtain a safer controlled actuation. This paper presents preliminary tests of the detection system in different scenarios in order to assess its reliability.

  4. Analysis of Laser Breakdown Data

    Science.gov (United States)

    Becker, Roger

    2009-03-01

    Experiments on laser breakdown for ns pulses of 532 nm or 1064 nm light in water and dozens of simple hydrocarbon liquids are analyzed and compared to widely-used models and other laser breakdown experiments reported in the literature. Particular attention is given to the curve for the probability of breakdown as a function of the laser fluence at the beam focus. Criticism is made of the na"ive forms of both ``avalanche'' breakdown and multi-photon breakdown. It appears that the process is complex and is intimately tied to the chemical group of the material. Difficulties with developing an accurate model of laser breakdown in liquids are outlined.

  5. Research of Dielectric Breakdown Microfluidic Sampling Chip

    Directory of Open Access Journals (Sweden)

    Feng Jiang

    2013-01-01

    Full Text Available Microfluidic chip is mainly driven electrically by external electrode and array electrode, but there are certain disadvantages in both of ways, which affect the promotion and application of microfluidic technology. This paper discusses a scheme that uses the conductive solution in a microchannel made by PDMS, replacing electrodes and the way of dielectric breakdown to achieve microfluidic chip driver. It could reduce the driving voltage and simplify the chip production process. To prove the feasibility of this method, we produced a microfluidic chip used in PDMS material with the lithography technology and experimented it. The results showed that using the dielectric breakdown to achieve microfluidic chip driver is feasible, and it has certain application prospect.

  6. Investigation of the current break-down phenomena in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, S.K.; Srinivasamurthy, N.; Agrawal, B.L. [Power Systems Group, ISRO Satellite Centre, Bangalore (India)

    1996-08-15

    Observed reverse current-voltage characteristics of the single crystal silicon and gallium arsenide solar cells have been analyzed. Physical mechanisms behind the junction break-down in silicon cells and current break-down in gallium arsenide cells have been identified. Preliminary estimates of the diffusion capacitance in GaAs cells have been presented

  7. Beauty in the Breakdown

    Science.gov (United States)

    Brisco, Nicole

    2008-01-01

    Most human beings look at erosion as the destruction of a surface, but artists can see that erosion often creates indefinable beauty. Where do you see beauty in the breakdown? In this article, the author presents an innovative lesson that would allow students to observe both human and physical nature. In this activity students will create a work…

  8. Effect of Ca doping level on the laser-induced voltages in tilted La{sub 1-x}Ca{sub x}MnO{sub 3} (0.1 ≤ x ≤ 0.7) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Ji; Zhang, Hui; Chen, Qingming; Liu, Xiang [Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming (China); Theingi, Mya [Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming (China); University of Yangon, Department of Chemistry, Yangon (Myanmar)

    2014-03-15

    Tilted La{sub 1-x}Ca{sub x}MnO{sub 3} (0.1 ≤ x ≤ 0.7) thin films have been grown on vicinal cut LaAlO{sub 3} (100) substrate by pulsed laser deposition. The laser-induced voltage effect was studied at room temperature with the KrF excimer laser using as the thermal source. The relationships between Ca doping level and voltage signal, response time and anisotropy Seebeck coefficient were established. The voltage signal and anisotropy Seebeck coefficient increase at first with increasing Ca doping level, reach a maximum at the same Ca content around x = 0.5, and then decrease. The respond time decreases with the Ca concentration increasing, and changes very little after x = 0.5. The figure of merit F{sub m} was also the largest at this doping level, indicating a potential good performance of the photodetector devices. The variation of intrinsic structural and transport anisotropy induced by the change of Ca concentration has been proposed to account for the different LIV effects observed in LCMO thin films. (orig.)

  9. Experimental results of breakdown in "Dena" plasma focus device

    Science.gov (United States)

    Goudarzi, Shervin; Hoseinian, S. M.; Raeisdana, A.

    2014-06-01

    In spite of the intense research activities on Plasma Focus devices, the physics of the initial breakdown and surface discharge phase has not been realized completely. In this paper we have analyzed the surface discharge and initial breakdown phase in Filippov-type Plasma Focus Facility "Dena" (90 kJ, 25 kV) on the base of the current and current derivative measured signals by using Argon, Neon and Krypton as working gases at different discharge voltages and gas pressures, and the effects of working conditions (atomic weight, discharge voltage and gas pressure) on the breakdown and surface discharge phase have expressed. Also, on the base of these results, we have investigated about the relation of this phase with final pinch phase.

  10. The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

    Directory of Open Access Journals (Sweden)

    Donghua Liu

    2015-01-01

    Full Text Available This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD improved by field plate technology. Effect of metal field plate (MFP and polysilicon field plate (PFP on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp = 7.88 ohm * mm2 are achieved.

  11. Novel dielectric reduces corona breakdown in ac capacitors

    Science.gov (United States)

    Loehner, J. L.

    1972-01-01

    Dielectric system was developed which consists of two layers of 25-gage paper separated by one layer of 50-gage polypropylene to reduce corona breakdown in ac capacitors. System can be used in any alternating current application where constant voltage does not exceed 400 V rms. With a little research it could probably be increased to 700 to 800 V rms.

  12. High voltage switches having one or more floating conductor layers

    Energy Technology Data Exchange (ETDEWEB)

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  13. Design of a 1200-V Thin-Silicon-Layer p-Channel SOI LDMOS Device

    Institute of Scientific and Technical Information of China (English)

    胡盛东; 张玲; 罗小蓉; 张波; 李肇基; 吴丽娟

    2011-01-01

    A 1200-V thin-silicon-layer p-channel silicon-on-insulator(SOI)lateral double-diffused metal-oxide-semiconductor (LDMOS)transistor is designed.The device named INI SO1 p-LDMOS is characterized by a series of equidistant high concentration n+ islands inserted at the interface of a top silicon layer and a buried oxide layer.Accumulation-mode holes,caused by the electric potential dispersion between the device surface and the substrate,are located in the spacing between two neighboring n+ islands,and greatly enhance the electric field of the buried oxide layer and therefore,effectively increase the device breakdown voltage.Based on a 2-μm-thick buried oxide layer and a 1.5-μm-thick top silicon layer,a breakdown voltage of 1224 V is obtained,resulting in the high electric field(608 V/μm)of the buried oxide layer.%A 1200-V thin-silicon-layer p-channel silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor is designed. The device named INI SOI p-LDMOS is characterized by a series of equidistant high concentration n+ islands inserted at the interface of a top silicon layer and a buried oxide layer. Accumulation-mode holes, caused by the electric potential dispersion between the device surface and the substrate, are located in the spacing between two neighboring n+ islands, and greatly enhance the electric field of the buried oxide layer and therefore, effectively increase the device breakdown voltage. Based on a 2-[im-thick buried oxide layer and a 1.5-um-thick top silicon layer, a breakdown voltage of 1224 V is obtained, resulting in the high electric field (608 V/\\im) of the buried oxide layer.

  14. Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2014-01-01

    Full Text Available This paper proposes a novel pixel circuit design and driving method for active-matrix organic light-emitting diode (AM-OLED displays that use low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs as driving element. The automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE simulator was used to verify that the proposed pixel circuit, which comprises five transistors and one capacitor, can supply uniform output current. The voltage programming method of the proposed pixel circuit comprises three periods: reset, compensation with data input, and emission periods. The simulated results reflected excellent performance. For instance, when ΔVTH=±0.33 V, the average error rate of the OLED current variation was low (<0.8%, and when ΔVTH_OLED=+0.33 V, the error rate of the OLED current variation was 4.7%. Moreover, when the I×R (current × resistance drop voltage of a power line was 0.3 V, the error rate of the OLED current variation was 5.8%. The simulated results indicated that the proposed pixel circuit exhibits high immunity to the threshold voltage deviation of both the driving poly-Si TFTs and OLEDs, and simultaneously compensates for the I×R drop voltage of a power line.

  15. The influence of the sand-dust environment on air-gap breakdown discharge characteristics of the plate-to-plate electrode

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The experiments of plane-plane gap discharge was carried out in an environment of artificial sandstorm. By comparing and analyzing the differences in gap breakdown voltage between the sand & dust environment and clean air, some problems were investigated, such as effects of wind speed and particle concentration on the breakdown voltage, differences of gap discharge characteristics between the dust & sand medium and the clean air medium. The results showed that compared with the clean air environment, the dust & sand environment had a decreased gap breakdown voltage. The longer the gap distance, the greater the voltage drop; the breakdown voltage decreased with the increase of particle concentration in flow. With the increase of wind speed, the breakdown voltage decreased at the beginning and rose afterwards. The results of the paper may helpful for further research regarding the unidentified flashover and external insulation characteristics of the HV power grid in the dust & sand environment.

  16. Effect of Polymer Blocking Layer and Processing Method on the Breakdown Strength and the Extractable Energy Density of Barium Titanate/poly(vinylidene fluoride-co-hexafluoropropylene) Nanocomposite Thin Film Capacitors

    Science.gov (United States)

    Kim, Yunsang; Kathaperumal, Mohanalingam; Smith, O'neil; Pan, Ming-Jen; Perry, Joseph

    2013-03-01

    Polymer-metal oxide nanocomposites are of great interest because of their high energy density and easy processability, which make them candidate materials for energy storage applications. Although loading of high-k filler in polymer matrix is desirable to maximize energy density of nanocomposites, the decrease of breakdown strength at higher loading compromises a potential gain in energy density. In this work, we investigate the effect of a fluoropolymer (CYTOP) blocking layer in BaTiO3/poly(vinylidene fluoride-co-hexafluoro propylene) nanocomposite films on the improvement of breakdown strength and energy storage density. The introduction of blocking layer may serve to prevent moisture absorption and charge injection from electrode, thereby decreasing the probability of catastrophic breakdown events. We also examine the influence of processing method, i.e. spin- or blade-casting, on the performance of bilayer films. The charge-discharge method shows about a twofold increase in extractable energy density (from 2 to 3.7 J/cm3) of bilayer films fabricated by blade-casting compared to single layer film by spin-casting because of improved breakdown strength. The results will be discussed in regards to morphology, electric field distribution, and loss of bilayer films.

  17. High Voltage Pulse Testing Survey.

    Science.gov (United States)

    1985-10-01

    Cryogenic 23 E. Liquids 26 F. Solids 28 1. Polyethylene 28 2. Cross-Linked Polyethylene ( XLPE ) 29 3. Polyimide and Polyvenylchloride (PVC) 31 VI Benefits 35 A...Strength of XLPE Cables 29 vii * 4" I PROGRAM OBJECTIVES The Pulse Test Survey summarizes government, industry, and technical reports on high voltage pulse...system of silicone oil on a XLPE (cross-linked polyethylene) spacer tends to lower the impulse breakdown by approximately 10 percent. The negative impulse

  18. Modeling rf breakdown arcs

    CERN Document Server

    Insepov, Zeke; Huang, Dazhang; Mahalingam, Sudhakar; Veitzer, Seth

    2010-01-01

    We describe breakdown in 805 MHz rf accelerator cavities in terms of a number of mechanisms. We devide the breakdown process into three stages: (1) we model surface failure using molecular dynamics of fracture caused by electrostatic tensile stress, (2) we model the ionization of neutrals responsible for plasma initiation and plasma growth using a particle in cell code, and (3) we model surface damage by assuming a process similar to unipolar arcing. Although unipolar arcs are strictly defined with equipotential boundaries, we find that the cold, dense plasma in contact with the surface produces very small Debye lengths and very high electric fields over a large area. These high fields produce strong erosion mechanisms, primarily self sputtering, compatible with the crater formation that we see. Results from the plasma simulation are included as a guide to experimental verification of this model.

  19. Space Charge Modulated Electrical Breakdown

    Science.gov (United States)

    Li, Shengtao; Zhu, Yuanwei; Min, Daomin; Chen, George

    2016-09-01

    Electrical breakdown is one of the most important physical phenomena in electrical and electronic engineering. Since the early 20th century, many theories and models of electrical breakdown have been proposed, but the origin of one key issue, that the explanation for dc breakdown strength being twice or higher than ac breakdown strength in insulating materials, remains unclear. Here, by employing a bipolar charge transport model, we investigate the space charge dynamics in both dc and ac breakdown processes. We demonstrate the differences in charge accumulations under both dc and ac stresses and estimate the breakdown strength, which is modulated by the electric field distortion induced by space charge. It is concluded that dc breakdown initializes in the bulk whereas ac breakdown initializes in the vicinity of the sample-electrode interface. Compared with dc breakdown, the lower breakdown strength under ac stress and the decreasing breakdown strength with an increase in applied frequency, are both attributed to the electric field distortion induced by space charges located in the vicinity of the electrodes.

  20. Quantitative statistical analysis of dielectric breakdown in zirconia-based self-assembled nanodielectrics.

    Science.gov (United States)

    Schlitz, Ruth A; Ha, Young-geun; Marks, Tobin J; Lauhon, Lincoln J

    2012-05-22

    Uniformity of the dielectric breakdown voltage distribution for several thicknesses of a zirconia-based self-assembled nanodielectric was characterized using the Weibull distribution. Two regimes of breakdown behavior are observed: self-assembled multilayers >5 nm thick are well described by a single two-parameter Weibull distribution, with β ≈ 11. Multilayers ≤5 nm thick exhibit kinks on the Weibull plot of dielectric breakdown voltage, suggesting that multiple characteristic mechanisms for dielectric breakdown are present. Both the degree of uniformity and the effective dielectric breakdown field are observed to be greater for one layer than for two layers of Zr-SAND, suggesting that this multilayer is more promising for device applications.

  1. Investigation of efficient termination structure for improved breakdown properties of semiconductor radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Krizaj, D.; Resnik, D.; Vrtacnik, D.; Amon, S. [Univ. of Ljubljana (Slovenia). Faculty of Electrical Engineering; Cindro, V. [Jozef Stefan Inst., Ljubljana (Slovenia)

    1998-06-01

    Efficiency of a new junction termination structure for improvement of breakdown properties of semiconductor radiation detectors is investigated. The structure consists of a diffused resistor winding around the active junction in a spiral fashion. The current flow through the spiral enables controlled potential distribution along the spiral turns and thus controlled depletion spreading from the main junction, efficiently preventing premature avalanche breakdown. Both multiple guard-ring structures and spiral junction termination structures have shown good breakdown properties typically three to five times higher than breakdown voltages of diodes without junction termination. The breakdown voltages of spiral junction termination structures are only weakly influenced by changes in substrate doping concentration caused by neutron irradiation. They can thus be considered for termination of future semiconductor radiation detectors.

  2. Amitriptyline and carbamazepine utilize voltage-gated ion channel suppression to impair excitability of sensory dorsal horn neurons in thin tissue slice: An in vitro study.

    Science.gov (United States)

    Wolff, Matthias; Czorlich, Patrick; Nagaraj, Chandran; Schnöbel-Ehehalt, Rose; Li, Yingji; Kwapiszewska, Grazyna; Olschewski, Horst; Heschl, Stefan; Olschewski, Andrea

    2016-08-01

    Amitriptyline, carbamazepine and gabapentin are often used for the treatment of neuropathic pain. However, their analgesic action on central sensory neurons is still not fully understood. Moreover, the expression pattern of their target ion channels is poorly elucidated in the dorsal horn of the spinal cord. Thus, we performed patch-clamp investigations in visualized neurons of lamina I-III of the spinal cord. The expression of the different voltage-gated ion channels, as the targets of these drugs, was detected by RT-PCR and immunohistochemistry. Neurons of the lamina I-III express the TTX-sensitive voltage-gated Na(+) as well as voltage-gated K(+) subunits assembling the fast inactivating (A-type) currents and the delayed rectifier K(+) currents. Our pharmacological studies show that tonically-firing, adapting-firing and single spike neurons responded dose-dependently to amitriptyline and carbamazepine. The ion channel inhibition consecutively reduced the firing rate of tonically-firing and adapting-firing neurons. This study provides evidence for the distribution of voltage-gated Na(+) and K(+) subunits in lamina I-III of the spinal cord and for the action of drugs used for the treatment of neuropathic pain. Our work confirms that modulation of voltage-gated ion channels in the central nervous system contributes to the antinociceptive effects of these drugs.

  3. Investigation of mechanism of breakdown in XLPE cables. Final report

    Energy Technology Data Exchange (ETDEWEB)

    McKean, A.L.

    1976-07-01

    The basic hypothesis that microporosity plays a significant role in the mechanism of breakdown of XLPE cable is explored. The potential improvement achieved by impregnating the microporous regions of the cable core with a neutral liquid is evaluated, with relation to ac voltage life and impulse strength. The effect at higher frequency is also demonstrated. A similar test program is pursued on model cables, designed to explore the effects of gas pressure and gas type on breakdown and life, since it is reasonable to expect that only the microporous regions of the insulation should be sensitive to the gas-pressure environment. Comparison of gas-pressurized model breakdown stress (and related microvoid size) with basic Paschen curves demonstrates reasonably good agreement, indicating that partial discharge is the basic mechanism of fatigue and breakdown. The form of the voltage life curve above and below the discharge inception level is proposed, and evidence is presented indicating breakdown originates in the bulk insulation as well as at the shield interface. It is also shown that model cable discharge energies are below 0.1 pC, even at very high stress, and cannot be measured with modern detectors. Results with liquid or gas impregnation suggest a possible approach to dielectric improvement.

  4. Subnanosecond processes in the stage of breakdown formation in gas at a high pressure

    Science.gov (United States)

    Korolev, Yu. D.; Bykov, N. M.; Ivanov, S. N.

    2008-12-01

    Results are presented from experimental studies of the prebreakdown stage of a discharge in nitrogen at pressures of a few tens of atmospheres, gap voltages higher than 140 kV, and a voltage rise time of about 1 ns. Breakdown occurs at the front of the voltage pulse; i.e., the time of breakdown formation is shorter than the front duration. It is shown that, in gaps with a nonuniform electric field, the breakdown formation time is mainly determined by the time of avalanche development to the critical number of charge carriers. The subsequent stages of breakdown (the development of the ionization wave and the buildup of the conductivity in the weakly conducting channel bridging the gap) turn out to be shorter than this time or comparable to it.

  5. Generalizing Microdischarge Breakdown Scaling Laws for Pressure and Gas

    Science.gov (United States)

    Loveless, Amanda; Garner, Allen

    2016-10-01

    Shrinking device dimensions for micro- and nanoelectromechanical systems necessitates accurate breakdown voltage predictions for reliable operation. Additionally, one must accurately predict breakdown voltage to optimize system geometry for applications in microplasmas and micropropulsion. Traditional approaches use Paschen's law (PL) to predict breakdown, but PL fails at small gap distances ( 15 μm) where field emission dominates. Subsequent work derived scaling laws and analytic expressions for breakdown voltage in argon at atmospheric pressure. Applications at high (e.g. combustion) and low (e.g. vacuum nanoelectronics) pressures for various gases motivate the generalization of these models for pressure and gas. This work addresses these concerns by deriving scaling laws generalized for gap distance, pressure, and gas, while also specifically incorporating and exploring the impact of field enhancement and work function. We compare these analytic scaling laws to experimental data and particle-in-cell simulations. Funded by a U.S. Nuclear Regulatory Commission Nuclear Education Program Faculty Development Grant Program at Purdue University.

  6. Improved Voltage and Fill Factor by Using Zinc Oxide Thin Film as a Barrier Layer in Dye-Sensitized Solar Cells

    Institute of Scientific and Technical Information of China (English)

    WANG Peng; WANG Li-Duo; LI Bin; QIU Yong

    2005-01-01

    @@ A series of dye-sensitized solar cells based on ZnO-modified TiO2 nano-porous films have been prepared. The current-voltage characteristics of the cells show that the ZnO-modification can improve the open-circuit voltage and the fill factor but can decrease the short-circuit current. Dark current and transient photovoltage measurements are used to study the back reaction. It is indicated that the recombination process is suppressed by blocking the hole transporting from the nano-porous TiO2 since the surface of the semiconductor is almost fully covered with ZnO as a barrier layer.

  7. Anomalous memory effect in the breakdown of low-pressure argon in a long discharge tube

    Energy Technology Data Exchange (ETDEWEB)

    Meshchanov, A. V.; Korshunov, A. N.; Ionikh, Yu. Z., E-mail: y.ionikh@spbu.ru [St. Petersburg State University (Russian Federation); Dyatko, N. A. [Troitsk Institute for Innovation and Fusion Research (Russian Federation)

    2015-08-15

    The characteristics of breakdown of argon in a long tube (with a gap length of 75 cm and diameter of 2.8 cm) at pressures of 1 and 5 Torr and stationary discharge currents of 5–40 mA were studied experimentally. The breakdown was initiated by paired positive voltage pulses with a rise rate of ∼10{sup 8}–10{sup 9} V/s and duration of ∼1–10 ms. The time interval between pairs was varied in the range of Τ ∼ 0.1–1 s, and that between pulses in a pair was varied from τ = 0.4 ms to ≈Τ/2. The aim of this work was to detect and study the so-called “anomalous memory effect” earlier observed in breakdown in nitrogen. The effect consists in the dynamic breakdown voltage in the second pulse in a pair being higher than in the first pulse (in contrast to the “normal” memory effect, in which the relation between the breakdown voltages is opposite). It is found that this effect is observed when the time interval between pairs of pulses is such that the first pulse in a pair is in the range of the normal memory effect of the preceding pair (under the given conditions, Τ ≈ 0.1–0.4 s). In this case, at τ ∼ 10 ms, the breakdown voltage of the second pulse is higher than the reduced breakdown voltage of the first pulse. Optical observations of the ionization wave preceding breakdown in a long tube show that, in the range of the anomalous memory effect and at smaller values of τ, no ionization wave is detected before breakdown in the second pulse. A qualitative interpretation of the experimental results is given.

  8. VUV Radiation and Breakdown

    Science.gov (United States)

    2011-02-28

    below about 130 nm.   This  leads to  chromatic   aberration  and smaller signal amplitude at short wavelengths as can be seen  in Figure 7.   The  second...the mirrors. It is possible to image the breakdown streamers using the VUV light since there is no chromatic aberration . Such images are shown in

  9. Self-Healable Electrical Insulation for High Voltage Applications

    Science.gov (United States)

    Williams, Tiffany S.

    2017-01-01

    Polymeric aircraft electrical insulation normally degrades by partial discharge with increasing voltage, which causes excessive localized Joule heating in the material and ultimately leads to dielectric failure of the insulator through thermal breakdown. Developing self-healing insulation could be a viable option to mitigate permanent mechanical degradation, thus increasing the longevity of the insulation. Instead of relying on catalyst and monomer-filled microcapsules to crack, flow, and cure at the damaged sites described in well-published mechanisms, establishment of ionic crosslinks could allow for multiple healing events to occur with the added benefit of achieving full recovery strength under certain thermal environments. This could be possible if the operating temperature of the insulator is the same as or close to the temperature where ionic crosslinks are formed. Surlyn, a commercial material with ionic crosslinks, was investigated as a candidate self-healing insulator based off prior demonstrations of self-healing behavior. Thin films of varying thicknesses were investigated and the effects of thickness on the dielectric strength were evaluated and compared to representative polymer insulators. The effects of thermal conditioning on the recovery strength and healing were observed as a function of time following dielectric breakdown. Moisture absorption was also studied to determine if moisture absorption rates in Surlyn were lower than that of common polyimides.

  10. Breakdowns in collaborative information seeking

    DEFF Research Database (Denmark)

    Hertzum, Morten

    2010-01-01

    of the use of the electronic medication record adopted in a Danish healthcare region and of the reports of five years of medication incidents at Danish hospitals. The results show that breakdowns in collaborative information seeking is a major source of medication incidents, that most of these breakdowns......Collaborative information seeking is integral to many professional activities. In hospital work, the medication process encompasses continual seeking for information and collaborative grounding of information. This study investigates breakdowns in collaborative information seeking through analyses...... are breakdowns in collaborative grounding rather than information seeking, that the medication incidents mainly concern breakdowns in the use of records as opposed to oral communication, that the breakdowns span multiple degrees of separation between clinicians, and that the electronic medication record has...

  11. Analysis of the thin-film SOI lateral bipolar transistor and optimization of its output characteristics for high-temperature applications

    Science.gov (United States)

    Adriaensen, S.; Flandre, D.

    2002-09-01

    In this paper, we investigate and optimize the static characteristics of NPN lateral bipolar transistors implemented in a thin-film fully-depleted SOI CMOS process for high-temperature analog applications. The basic lateral SOI bipolar device, which shows good behaviour in high-temperature circuits in spite of its relatively poor performances, is firstly described regarding its process and layout parameters. Then the concept of the graded-base bipolar transistor is introduced. This device presents significantly improved output characteristics while preserving standard current gain and CMOS process compatibility. Measurements and simulations are used to demonstrate the improvements of the breakdown voltage and the Early voltage of the bipolar device.

  12. On Preliminary Breakdown

    Science.gov (United States)

    Beasley, W. H.; Petersen, D.

    2013-12-01

    The preliminary breakdown phase of a negative cloud-to-ground lightning flash was observed in detail. Observations were made with a Photron SA1.1 high-speed video camera operating at 9,000 frames per second, fast optical sensors, a flat-plate electric field antenna covering the SLF to MF band, and VHF and UHF radio receivers with bandwidths of 20 MHz. Bright stepwise extensions of a negative leader were observed at an altitude of 8 km during the first few milliseconds of the flash, and were coincident with bipolar electric field pulses called 'characteristic pulses'. The 2-D step lengths of the preliminary processes were in excess of 100 meters, with some 2-D step lengths in excess of 200 meters. Smaller and shorter unipolar electric field pulses were superposed onto the bipolar electric field pulses, and were coincident with VHF and UHF radio pulses. After a few milliseconds, the emerging negative stepped leader system showed a marked decrease in luminosity, step length, and propagation velocity. Details of these events will be discussed, including the possibility that the preliminary breakdown phase consists not of a single developing lightning leader system, but of multiple smaller lightning leader systems that eventually join together into a single system.

  13. Effect of bias voltage on the structural, optical and electrical properties of ZnO.Zr thin films%衬底偏压对ZnO:Zr薄膜结构及光电性能的影响

    Institute of Scientific and Technical Information of China (English)

    张化福

    2012-01-01

    以Zn:Zr(Zr片贴在金属Zn靶上面)为溅射靶材,利用直流反应磁控溅射法在Ar/O_2混合气氛中制备Zr掺杂ZnO(ZnO:Zr)薄膜.在制备ZnO:Zr薄膜时,衬底偏压在0~60V之间变化.研究结果表明,衬底偏压对薄膜的结构、光学及电学性能有很大影响.当衬底偏压从0增大到60V时,薄膜的平均光学透过率和平均折射率都单调增大,而薄膜的晶粒尺寸先增大后减小.ZnO:Zr薄膜电阻率的变化规律与晶粒尺寸相反.%Zr-doped ZnO thin films were fabricated in Ar/O2 mixture gas by DC reactive magne- tron sputtering from a Zn:Zr target where Zr chips were attached on the surface of the metallic Zn target. During the process of deposition, the substrate bias voltage ranges from 0 to 60 V. Re- sults indicate that the bias voltage plays an important role in the structure, optical and electrical properties of the deposited films. When the bias voltage increases from 0 to 60V, the average op- tical transmittance and refractive index of ZnO: Zr films monotoneously increase. However, the crystallite size increases initially and then decreases with increasing bias voltage. For the resistivi- ty of ZnO:Zr films, the variation is on the contrary.

  14. Electrical transport properties and laser-induced voltage effect in La{sub 0.8}Ca{sub 0.2}MnO{sub 3} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Theingi, Mya [Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming (China); University of Yangon, Department of Chemistry, Yangon (Myanmar); Ma, Ji; Zhang, Hui; Cui, Qi; Yi, Jianhong; Chen, Qingming [Kunming University of Science and Technology, Faculty of Materials Science and Engineering, Kunming (China)

    2014-03-15

    La{sub 0.8}Ca{sub 0.2}MnO{sub 3} (LCMO) thin films about 200 nm thickness were grown on untilted and tilted (5 , 10 and 15 ) LaAlO{sub 3} (100) single crystal substrates by pulsed laser deposition technique. Electrical properties of the epitaxial thin films were studied by conventional four-probe technique and the anisotropic thermoelectric properties of the films grown on the tilted substrates have been investigated by laser-induced voltage (LIV) measurements. X-ray diffraction analysis and atomic force microscopy results show that the prepared LCMO thin films have a single phase and high crystalline quality. The remarkably large temperature coefficient of resistance (TCR) values (above 11 %/K) are observed in the all films. TCR value reaches 18 %/K on the film grown on 10 tilted substrate. The intensity of LIV signals monotonously increases with the tilting angles, and the largest signal is 148 mV with the fast time response 229 ns for the film grown on 15 tilted substrate. (orig.)

  15. Electrical breakdown experiments with application to alkali metal thermal-to-electric converters

    Energy Technology Data Exchange (ETDEWEB)

    Momozaki, Y.; El-Genk, M.S. [The University of New Mexico, Albuquerque, NM (United States). Institute for Space and Nuclear Power Studies and Department of Chemical and Nuclear Engineering

    2003-04-01

    Electrical breakdown in alkali metal thermal-to-electric converters (AMTECs) limits the number of solid electrolytes that could be connected in series and, hence, the output voltage. Experiments are conducted to measure the DC electrical breakdown voltage in cesium vapor between two planar molybdenum electrodes, 1.6 cm in diameter, separated by a 0.5 mm gap, and relate the results to potential electrical breakdown on the cathode side of AMTECs. Two sets of experiments are conducted. In the first set, in which the electrodes are kept at 560 and 650 K and the cesium pressure varied from 0.71 to 29 Pa, when the cooler electrode is positively biased, breakdown occurs at {approx}500 V. When the cooler electrode is negatively biased, breakdown occurs at 700 V. In the second set of experiments, in which the electrodes are held at 625 and 1100 K and the cesium pressure varied from 1.7 to 235 Pa, when the cooler electrode is positively biased, the breakdown voltage is <4 V but in excess of 400 V when the cooler electrode is negatively biased. Because the first ionization potential (3.89 V) and the ionization rate constant of cesium are lower and higher, respectively, than for sodium (5.14 V) and potassium (4.34 V) vapors, the DC electrical breakdown voltage in AMTECs with either a potassium or a sodium working fluid is expected to be higher than measured in this work for cesium vapor. In such converters, the wall should be negatively biased relative to the highest voltage cathode in order to avoid electrical breakdown up to 400 V, or even higher. (author)

  16. Low voltage varistor ceramics based on SnO2

    Indian Academy of Sciences (India)

    S R Dhage; V Ravi; O B Yang

    2007-12-01

    The nonlinear current ()–voltage () characteristics of tin dioxide doped with either Nb2O5 and CoO or Sb2O3 and CoO show promising values of nonlinear coefficient () values (∼11) with low breakdown voltages (B, ∼40 V mm-1). The pentavalent antimony or niobium acts as donor and increases the electronic conductivity. The crucial parameter for obtaining low breakdown voltage is the grain size, which depends upon sintering duration and temperature of these oxide ceramics.

  17. A relationship between statistical time to breakdown distributions and pre-breakdown negative differential resistance at nanometric scale

    Energy Technology Data Exchange (ETDEWEB)

    Foissac, R. [STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble (France); Blonkowski, S.; Delcroix, P. [STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); Kogelschatz, M. [Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble (France)

    2014-07-14

    Using an ultra-high vacuum Conductive atomic force microscopy (C-AFM) current voltage, pre-breakdown negative differential resistance (NDR) characteristics are measured together with the time dependent dielectric breakdown (TDDB) distributions of Si/SiON (1.4 and 2.6 nm thick). Those experimental characteristics are systematically compared. The NDR effect is modelled by a conductive filament growth. It is showed that the Weibull TDDB statistic distribution scale factor is proportional to the growth rate of an individual filament and then has the same dependence on the electric field. The proportionality factor is a power law of the ratio between the surfaces of the CAFM tip and the filament's top. Moreover, it was found that, for the high fields used in those experiments, the TDDB acceleration factor as the growth rate characteristic is proportional to the Zener tunnelling probability. Those observations are discussed in the framework of possible breakdown or forming mechanism.

  18. Air Breakdown During Fires

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    This paper analyzes the different discharge processes occurring at normal temperatures and higl temperatures. The theoretical results show that the net charges in the streamer channel at normal temperatures are zero, but they are positive at high temperatures so that the advancing field is reinforced more than that at normal temperatures. Therefore, the field required for streamer propagation is reduced at high temperatures. The sparkover voltage is largely reduced with increased temperature, which is influenced by the solid materials in the flame.

  19. Strategies to reduce the open-circuit voltage deficit in Cu2ZnSn(S,Se)4 thin film solar cells

    Science.gov (United States)

    Kim, Jekyung; Shin, Byungha

    2017-09-01

    Cu2ZnSn(S,Se)4 thin film solar cell has attracted significant attention in thin film solar cell technologies considering its low-cost, non-toxicity, and earth-abundance. However, the highest efficiency still remains at 12.6%, far below the theoretical efficiency of Shockley-Queisser (SQ) limit of around 30%. The limitation behind such shortcoming in the device performance was reported to stem primarily from a high V oc deficit compared to other thin film solar cell technologies such as CdTe or Cu(In,Ga)Se2 (CIGS), whose origins are attributed to the prevalence of band tailing from cation disordering as well as to the high recombination at the interfaces. In this report, systematic studies on the causes of a high V oc deficit and associated remarkable approaches to achieve high V oc have been reviewed, provided with a guidance on the future direction of CZTSSe research in resolving the high V oc deficit issue. [Figure not available: see fulltext.

  20. Strategies to reduce the open-circuit voltage deficit in Cu2ZnSn(S,Se)4 thin film solar cells

    Science.gov (United States)

    Kim, Jekyung; Shin, Byungha

    2017-06-01

    Cu2ZnSn(S,Se)4 thin film solar cell has attracted significant attention in thin film solar cell technologies considering its low-cost, non-toxicity, and earth-abundance. However, the highest efficiency still remains at 12.6%, far below the theoretical efficiency of Shockley-Queisser (SQ) limit of around 30%. The limitation behind such shortcoming in the device performance was reported to stem primarily from a high V oc deficit compared to other thin film solar cell technologies such as CdTe or Cu(In,Ga)Se2 (CIGS), whose origins are attributed to the prevalence of band tailing from cation disordering as well as to the high recombination at the interfaces. In this report, systematic studies on the causes of a high V oc deficit and associated remarkable approaches to achieve high V oc have been reviewed, provided with a guidance on the future direction of CZTSSe research in resolving the high V oc deficit issue. [Figure not available: see fulltext.

  1. Determination of threshold and maximum operating electric stresses for selected high voltage insulation. Task 3: Investigation of high voltage capacitor insulation

    Science.gov (United States)

    Sosnowski, M.; Eager, G. S., Jr.

    1984-03-01

    The threshold voltage of capacitor insulation was investigated. The experimental work was performed on samples prepared from commercial polypropylene insulated, liquid-filled capacitors. The samples were vacuum-impregnated with the original capacitor insulating liquid obtained from the manufacturer. A limited number of full-size capacitor elements also were tested. Impulse voltage breakdown tests with dc voltage prestressing were performed at room temperature and 75 C. From the results of these tests, the threshold voltage of the samples of the capacitor insulation was determined at both temperatures and that of the whole capacitor elements at room temperature. The threshold voltage of the capacitor insulation was found to be approximately equal to the impulse breakdown voltage. No difference was found between the threshold voltage at room temperature and at 75 C. The threshold voltage of the whole capacitor elements at room temperature was found to be equal to approximately 80% of the threshold voltage of the capacitor insulation samples.

  2. Dramatically enhanced electrical breakdown strength in cellulose nanopaper

    Directory of Open Access Journals (Sweden)

    Jianwen Huang

    2016-09-01

    Full Text Available Electrical breakdown behaviors of nanopaper prepared from nanofibrillated cellulose (NFC were investigated. Compared to conventional insulating paper made from micro softwood fibers, nanopaper has a dramatically enhanced breakdown strength. Breakdown field of nanopaper is 67.7 kV/mm, whereas that of conventional paper is only 20 kV/mm. Air voids in the surface of conventional paper are observed by scanning electron microscope (SEM. Further analyses using mercury intrusion show that pore diameter of conventional paper is around 1.7 μm, while that of nanopaper is below 3 nm. Specific pore size of nanopaper is determined to be approximately 2.8 nm by the gas adsorption technique. In addition, theoretical breakdown strengths of nanopaper and conventional paper are also calculated to evaluate the effect of pore size. It turns out that theoretical values agree well with experimental data, indicating that the improved strength in nanopaper is mainly attributed to the decreased pore size. Due to its outstanding breakdown strength, this study indicates the suitability of nanopaper for electrical insulation in ultra-high voltage convert transformers and other electrical devices.

  3. Pulsed electrical breakdown of a void-filled dielectric

    Science.gov (United States)

    Anderson, R. A.; Lagasse, R. R.; Schroeder, J. L.

    2002-05-01

    We report breakdown strengths in a void-filled dielectric material, epoxy containing 48 vol % hollow glass microballoon filler, which is stressed with unipolar voltage pulses of the order of 10 μs duration. The microballoon voids had mean diameters of approximately 40 μm and contained SO2 gas at roughly 30% atmospheric pressure. This void-filled material displays good dielectric strength (of the order of 100 kV mm-1) under these short-pulse test conditions. Results from a variety of electrode geometries are reported, including arrangements in which the electric stress is highly nonuniform. Conventional breakdown criteria based on mean or peak electric stress do not account for these data. A statistics-based predictive breakdown model is developed, in which the dielectric is divided into independent, microballoon-sized "discharge cells" and the spontaneous discharge of a single cell is presumed to launch full breakdown of the composite. We obtain two empirical parameters, the mean and standard deviation of the spontaneous discharge field, by fitting breakdown data from two electrode geometries having roughly uniform fields but with greatly differing volumes of electrically stressed material. This model accounts for many aspects of our data, including the inherent statistical scatter and the dependence on the stressed volume, and it provides informative predictions with electrode geometries giving highly nonuniform fields. Issues related to computational spatial resolution and cutoff distance are also discussed.

  4. Dramatically enhanced electrical breakdown strength in cellulose nanopaper

    Science.gov (United States)

    Huang, Jianwen; Zhou, Yuanxiang; Zhou, Zhongliu; Liu, Rui

    2016-09-01

    Electrical breakdown behaviors of nanopaper prepared from nanofibrillated cellulose (NFC) were investigated. Compared to conventional insulating paper made from micro softwood fibers, nanopaper has a dramatically enhanced breakdown strength. Breakdown field of nanopaper is 67.7 kV/mm, whereas that of conventional paper is only 20 kV/mm. Air voids in the surface of conventional paper are observed by scanning electron microscope (SEM). Further analyses using mercury intrusion show that pore diameter of conventional paper is around 1.7 μ m , while that of nanopaper is below 3 nm. Specific pore size of nanopaper is determined to be approximately 2.8 nm by the gas adsorption technique. In addition, theoretical breakdown strengths of nanopaper and conventional paper are also calculated to evaluate the effect of pore size. It turns out that theoretical values agree well with experimental data, indicating that the improved strength in nanopaper is mainly attributed to the decreased pore size. Due to its outstanding breakdown strength, this study indicates the suitability of nanopaper for electrical insulation in ultra-high voltage convert transformers and other electrical devices.

  5. Figure of Merit for Detectors Based on Laser-Induced Thermoelectric Voltages in La1-xCaxMnO3 and YBa2Cu3O7-σ Thin Films

    Institute of Scientific and Technical Information of China (English)

    ZHANG Guo-Yong; ZHANG Peng-Xiang; ZHANG Hui; LEE Wing-Kee

    2005-01-01

    @@ A figure ofmerit (FOM) Z = Up/тr, where Up is the peak voltage, and тr is the rise time of the laser-induced thermoelectric voltage (LITV) signal, is defined for photodetector based on the LITV and the influence of the parameters on FOM is analysed based on the time dependence of LITVs in La1-x CaxMnO3 (LCMO) and YBa2 Cu3 O7-σ(YBCO) thin films grown on vicinal-cut substrates. We find that the FOM increases as the photon penetration depth decreases, and linearly increases with the thermal diffusion constant D. To achieve the highest FOM, the film thickness d has to be controlled to an optimum value. We also find that the FOM is directly proportional to the laser absorption coefficient α0, the laser energy density per pulse E, the illuminated length of film l, sin(2α)[αis the vicinal-cut angle], the Seebeck coefficient anisotropy ( Sab - Sc), and is inversely proportional to the mass density p and the specific heat co.

  6. The effect of gas bubbles on electrical breakdown in transformer oil

    Science.gov (United States)

    Tyuftyaev, A. S.; Gadzhiev, M. Kh; Sargsyan, M. A.; Akimov, P. L.; Demirov, N. A.

    2016-11-01

    To study the breakdown of transformer oil with gas bubbles an experimental setup was created that allows to determine electrical and optical properties of the discharge. Oil was sparged with air and sulfur hexafluoride gas. It was found that sparging oil with gas lowers the breakdown voltage of the oil. When a gas bubble is present between the electrodes at a considerable distance from the electrodes at first there is a spherically shape flash observed, resulting in the discharge gap overlapping by a conductive channel. These leads to discharges forming in the discharge gap with the frequency of hundreds Hz and higher. Despite the slightly lower breakdown voltage of oil sparged with sulfur hexafluoride the advantage of this medium to clean oil can serve as a two-phase medium damping properties, which may be sufficient to prevent the destruction of the body in the breakdown of oil-filled equipment.

  7. Numerical and experimental study of the mesa configuration in high-voltage 4H-SiC PiN rectifiers

    Science.gov (United States)

    Deng, Xiao-Chuan; Chen, Xi-Xi; Li, Cheng-Zhan; Shen, Hua-Jun; Zhang, Jin-Ping

    2016-08-01

    The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study. Three geometrical parameters, i.e., mesa height, mesa angle and mesa bottom corner, are investigated by numerical simulation. The simulation results show that a deep mesa height, a small mesa angle and a smooth mesa bottom (without sub-trench) could contribute to a high breakdown voltage due to a smooth and uniform surface electric field distribution. Moreover, an optimized mesa structure without sub-trench (mesa height of 2.2 μm and mesa angle of 20°) is experimentally demonstrated. A maximum reverse blocking voltage of 4 kV and a forward voltage drop of 3.7 V at 100 A/cm2 are obtained from the fabricated diode with a 30-μm thick N- epi-layer, corresponding to 85% of the ideal parallel-plane value. The blocking characteristic as a function of the JTE dose is also discussed for the PiN rectifiers with and without interface charge. Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 61234006), the Open Foundation of the State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201301), and the National Science and Technology Major Project of the Ministry of Science and Technology, China (Grant No. 2013ZX02305-003).

  8. A theoretical estimation of the pre-breakdown-heating time in the underwater discharge acoustic source

    Institute of Scientific and Technical Information of China (English)

    Wang Yi-Bo; Wang Shang-Wu; Zeng Xin-Wu

    2012-01-01

    One of the common characteristics of the electrothermal breakdown in an underwater discharge acoustic source(UDAS)is the existence of a pre-breakdown-heating phase.In our experiment,two phenomena were observed:(1)the breakdown time that takes on high randomicity and obeys a "double-peak" stochastic distribution;(2)the higher salt concentration that reduces the residual voltage and causes 100% non-breakdown.The mechanism of electrothermal breakdown is analysed.To specify the end of the pre-breakdown-heating phase,a "border boiling" assumption is proposed,in which the breakdown time is assumed to be the time needed to heat the border water around the initial arc to 773 K.Based on this ‘border boiling' assumption,the numerical simulation is performed to evaluate the effects of two heating mechanisms:the Joule heating from the ionic current,and the radiation heating from the initial arc.The simulation results verify the theoretical explanations to these two experiment phenomena:(1)the stochastic distribution of the radius of the initial arc results in the randomicity of the breakdown time;(2)the difference in efficiency between the radiation heating and the Joule heating determines that,in the case of higher salt concentration,more energy will be consumed in the pre-breakdown-heating phase.

  9. Streamer parameters and breakdown in CO2

    Science.gov (United States)

    Seeger, M.; Avaheden, J.; Pancheshnyi, S.; Votteler, T.

    2017-01-01

    CO2 is a promising gas for the replacement of SF6 in high-voltage transmission and distribution networks due to its lower environmental impact. The insulation properties of CO2 are, therefore, of great interest. For this, the properties of streamers are important, since they determine the initial discharge propagation and possibly the transition to a leader. The present experimental investigation addresses the streamer inception and propagation at ambient temperature in the pressure range 0.05-0.5 MPa at both polarities. Streamer parameters, namely the stability field, radius and velocity, were deduced in uniform and in strongly non-uniform background fields. The measured breakdown fields can then be understood by streamer propagation and streamer-to-leader transition.

  10. Delaying vortex breakdown by waves

    Science.gov (United States)

    Yao, M. F.; Jiang, L. B.; Wu, J. Z.; Ma, H. Y.; Pan, J. Y.

    1989-03-01

    The effect of spiral waves on delaying vortex breakdown in a tube is studied experimentally and theoretically. When a harmonic oscillation was imposed on one of guiding vanes in the tube, the breakdown was observed to be postponed appreciately. According to the generalized Lagrangian mean theory, proper forcing spiral waves may produce an additional streaming momentum, of which the effect is favorable and similar to an axial suction at downstream end. The delayed breakdown position is further predicted by using nonlinear wave theory. Qualitative agreement between theory and experiment is obtained, and experimental comparison of the effects due to forcing spiral wave and axial suction is made.

  11. Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Xin; Qiao, Ming; He, Yitao; Li, Zhaoji; Zhang, Bo, E-mail: bozhang@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

    2015-11-16

    Hot-carrier-induced linear drain current (I{sub dlin}) and threshold voltage (V{sub th}) degradations for the thin layer SOI field p-channel lateral double-diffused MOS (pLDMOS) are investigated. Two competition degradation mechanisms are revealed and the hot-carrier conductance modulation model is proposed. In the channel, hot-hole injection induced positive oxide trapped charge and interface trap gives rise to the V{sub th} increasing and the channel conductance (G{sub ch}) decreasing, then reduces I{sub dlin}. In the p-drift region, hot-electron injection induced negative oxide trapped charge enhances the conductance of drift doping resistance (G{sub d}), and then increases I{sub dlin}. Consequently, the eventual I{sub dlin} degradation is controlled by the competition of the two mechanisms due to conductance modulation in the both regions. Based on the model, it is explained that the measured I{sub dlin} anomalously increases while the V{sub th} is increasing with power law. The thin layer field pLDMOS exhibits more severe V{sub th} instability compared with thick SOI layer structure; as a result, it should be seriously evaluated in actual application in switching circuit.

  12. Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics.

    Science.gov (United States)

    Xu, Wangying; Cao, Hongtao; Liang, Lingyan; Xu, Jian-Bin

    2015-07-15

    We reported a novel aqueous route to fabricate Ga2O3 dielectric at low temperature. The formation and properties of Ga2O3 were investigated by a wide range of characterization techniques, revealing that Ga2O3 films could effectively block leakage current even after annealing in air at 200 °C. Furthermore, all aqueous solution-processed In2O3/Ga2O3 TFTs fabricated at 200 and 250 °C showed mobilities of 1.0 and 4.1 cm2 V(-1) s(-1), on/off current ratio of ∼10(5), low operating voltages of 4 V, and negligible hysteresis. Our study represents a significant step toward the development of low-cost, low-temperature, and large-area green oxide electronics.

  13. Electrical-breakdown and electronic current of tantalum-tantalum oxide-aqueous electrolyte systems. [Ta sub 2 O sub 5

    Energy Technology Data Exchange (ETDEWEB)

    Kalra, K.C.; Katyal, P. (Dept. of Chemistry, Maharshi Dayanand Univ., Rohtak (India))

    1991-06-30

    Breakdown voltage and electronic current data for barrier anodic tantalum oxide films in contact with aqueous electrolytes of various concentrations and compositions at 298 K have been obtained. The influence of electrolyte concentration on breakdown characteristics can be broadly explained in terms of the Ikonopisov electron avalanche breakdown model. Albella and coworkers' theory explains the effect of electrolyte concentration for our results more explicitly. Various parameters of the Albella theory have been evaluated, and their dependence on electrolyte concentration has been studied. The dependence of breakdown voltage on electrolyte concentration has also been discussed in the light of the theory of Di Quarto and coworkers. (orig.).

  14. The breakdown and glow phases during the initiation of discharges for lamps

    Energy Technology Data Exchange (ETDEWEB)

    Pitchford, L.C.; Peres, I.; Liland, K.B.; Boeuf, J.P. [Centre de Physique des Plasmas et Applications, Universite Paul Sabatier, 118 route de Narbonne, 31062 Toulouse (France); Gielen, H. [Central Development Laboratories, Philips Lighting, Eindhoven (The Netherlands)

    1997-07-01

    High intensity discharge (HID) lamps are often initiated by the application of one or more short, high-voltage, breakdown pulses superimposed on a 50 or 60 Hz generator voltage. A successful transition from the breakdown event to steady-state operating conditions in HID lamps requires that the lamp-circuit system be adequate to sustain the plasma created during breakdown until the electrodes are heated to thermionic temperatures. In this article, we use a one-dimensional (in the axial direction) transient discharge model to study the conditions needed to sustain the cold-cathode discharge after a breakdown event has occurred. While the application of our one-dimensional model to real lamps is approximate, we find that the model predictions are consistent with experimental results in HID lamps, a few of which are presented here. The main conclusion from this work is that, after breakdown, the voltage necessary to sustain a glow discharge is dependent on the source impedance, the gas composition, and on the plasma density created by the breakdown event. {copyright} {ital 1997 American Institute of Physics.}

  15. Breakdown and space charge formation in polyimide film under DC high stress at various temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kishi, Y; Hashimoto, T; Miyake, H; Tanaka, Y; Takada, T, E-mail: ytanaka@tcu.ac.j [Tokyo City University, 1-28-1, Tamatsutsumi, Setagaya-ku, Tokyo (Japan)

    2009-08-01

    Relationship between breakdown strength and space charge formation in polyimide film under dc high stress at various temperatures is investigated using pulsed electro-acoustic (PEA) method. Some typical results of the space charge observations show that hetero space charges are always found before breakdown. The amount of the hetero charges increase with increase of temperature or increase of applied electric field. Since the enhancement of the internal electric field in the sample by the accumulation of the hetero charges is not so large, the accumulation doesn't seem to be an immediate cause of breakdown. However since it is always observed before breakdown, it may be predictive information for breakdown. In a certain case, the breakdown occurs after voltage application for few hours. However, while we give an interval of short circuit condition after observing the hetero space charge under dc stress, the total voltage application time to breakdown is almost the same to the case without the interval. It means that the hetero space charge generation may show a kind of degradation of the material.

  16. A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition

    Science.gov (United States)

    Altuntas, Halit; Bayrak, Turkan

    2017-03-01

    In this work, we aimed to investigate the effects of two different plasma sources on the electrical properties of low-temperature plasma-assisted atomic layer deposited (PA-ALD) AlN thin films. To compare the electrical properties, 50 nm thick AlN films were grown on p-type Si substrates at 200 °C by using an inductively coupled RF-plasma (ICP) and a stainless steel hollow cathode plasma-assisted (HCPA) ALD systems. Al/AlN/ p-Si metal-insulator-semiconductor (MIS) capacitor devices were fabricated and capacitance versus voltage ( C- V) and current-voltage ( I- V) measurements performed to assess the basic important electrical parameters such as dielectric constant, effective charge density, flat-band voltage, breakdown field, and threshold voltage. In addition, structural properties of the films were presented and compared. The results show that although HCPA-ALD deposited AlN thin films has structurally better and has a lower effective charge density ( N eff ) value than ICP-ALD deposited AlN films, those films have large leakage current, low dielectric constant, and low breakdown field. This situation was attributed to the involvement of Si atoms into the AlN layers during the HCPA-ALD processing leads to additional current path at AlN/Si interface and might impair the electrical properties.

  17. A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition

    Science.gov (United States)

    Altuntas, Halit; Bayrak, Turkan

    2016-12-01

    In this work, we aimed to investigate the effects of two different plasma sources on the electrical properties of low-temperature plasma-assisted atomic layer deposited (PA-ALD) AlN thin films. To compare the electrical properties, 50 nm thick AlN films were grown on p-type Si substrates at 200 °C by using an inductively coupled RF-plasma (ICP) and a stainless steel hollow cathode plasma-assisted (HCPA) ALD systems. Al/AlN/p-Si metal-insulator-semiconductor (MIS) capacitor devices were fabricated and capacitance versus voltage (C-V) and current-voltage (I-V) measurements performed to assess the basic important electrical parameters such as dielectric constant, effective charge density, flat-band voltage, breakdown field, and threshold voltage. In addition, structural properties of the films were presented and compared. The results show that although HCPA-ALD deposited AlN thin films has structurally better and has a lower effective charge density (N eff ) value than ICP-ALD deposited AlN films, those films have large leakage current, low dielectric constant, and low breakdown field. This situation was attributed to the involvement of Si atoms into the AlN layers during the HCPA-ALD processing leads to additional current path at AlN/Si interface and might impair the electrical properties.

  18. Fundamentals of undervoltage breakdown through the Townsend mechanism

    Science.gov (United States)

    Cooley, James E.

    electrons required to achieve breakdown is measured in argon at pd values of 3-10 Torr-m. The required electron pulse magnitude was found to scale inversely with pressure and voltage in this parameter range. When higher-power infrared laser pulses were used to heat the cathode surface, a faster, streamer-like breakdown mechanism was occasionally observed. As an example application, an investigation into the requirements for initiating discharges in Gas-fed Pulsed Plasma Thrusters (GFPPTs) is conducted. Theoretical investigations based on order-of-magnitude characterizations of previous GFPPT designs reveal that high-conductivity arc discharges are required for critically-damped matching of circuit components, and that relatively fast streamer breakdown is preferable to minimize delay between triggering and current sheet formation. The faster breakdown mechanism observed in the experiments demonstrates that such a discharge process can occur. However, in the parameter space occupied by most thrusters, achieving the phenomenon by way of a space charge distortion caused purely by an electron pulse should not be possible. Either a transient change in the distribution of gas density, through ablation or desorption, or a thruster design that occupies a different parameter space, such as one that uses higher mass bits, higher voltages, or smaller electrode spacing, is required for undervoltage breakdown to occur.

  19. Experimental breakdown of selected anodized aluminum samples in dilute plasmas

    Science.gov (United States)

    Grier, Norman T.; Domitz, Stanley

    1992-01-01

    Anodized aluminum samples representative of Space Station Freedom structural material were tested for electrical breakdown under space plasma conditions. In space, this potential arises across the insulating anodized coating when the spacecraft structure is driven to a negative bias relative to the external plasma potential due to plasma-surface interaction phenomena. For anodized materials used in the tests, it was found that breakdown voltage varied from 100 to 2000 volts depending on the sample. The current in the arcs depended on the sample, the capacitor, and the voltage. The level of the arc currents varied from 60 to 1000 amperes. The plasma number density varied from 3 x 10 exp 6 to 10 exp 3 ions per cc. The time between arcs increased as the number density was lowered. Corona testing of anodized samples revealed that samples with higher corona inception voltage had higher arcing inception voltages. From this it is concluded that corona testing may provide a method of screening the samples.

  20. New phenomenology of gas breakdown in DC and RF fields

    Science.gov (United States)

    Petrović, Zoran Lj; Sivoš, Jelena; Savić, Marija; Škoro, Nikola; Radmilović Radenović, Marija; Malović, Gordana; Gocić, Saša; Marić, Dragana

    2014-05-01

    This paper follows a review lecture on the new developments in the field of gas breakdown and low current discharges, usually covered by a form of Townsend's theory and phenomenology. It gives an overview of a new approach to identifying which feedback agents provide breakdown, how to model gas discharge conditions and reconcile the results with binary experiments and how to employ that knowledge in modelling gas discharges. The next step is an illustration on how to record volt-ampere characteristics and use them on one hand to obtain the breakdown voltage and, on the other, to identify the regime of operation and model the secondary electron yields. The second aspect of this section concerns understanding the different regimes, their anatomy, how those are generated and how free running oscillations occur. While temporal development is the most useful and interesting part of the new developments, the difficulty of presenting the data in a written form precludes an easy publication and discussion. Thus, we shall only mention some of the results that stem from these measurements. Most micro discharges operate in DC albeit with complex geometries. Thus, parallel plate micro discharge measurements were needed to establish that Townsend's theory, with all its recent extensions, is still valid until some very small gaps. We have shown, for example, how a long-path breakdown puts in jeopardy many experimental observations and why a flat left-hand side of the Paschen curve often does not represent good physics. We will also summarize a kinetic representation of the RF breakdown revealing a somewhat more complex picture than the standard model. Finally, we will address briefly the breakdown in radially inhomogeneous conditions and how that affects the measured properties of the discharge. This review has the goal of summarizing (rather than developing details of) the current status of the low-current DC discharges formation and operation as a discipline which, in spite of

  1. CFD Simulation of Transonic Flow in High-Voltage Circuit Breaker

    Directory of Open Access Journals (Sweden)

    Xiangyang Ye

    2012-01-01

    Full Text Available A high-voltage circuit breaker is an indispensable piece of equipment in the electric transmission and distribution systems. Transonic flow typically occurs inside breaking chamber during the current interruption, which determines the insulating characteristics of gas. Therefore, accurate compressible flow simulations are required to improve the prediction of the breakdown voltages in various test duties of high-voltage circuit breakers. In this work, investigation of the impact of the solvers on the prediction capability of the breakdown voltages in capacitive switching is presented. For this purpose, a number of compressible nozzle flow validation cases have been presented. The investigation is then further extended for a real high-voltage circuit breaker geometry. The correlation between the flow prediction accuracy and the breakdown voltage prediction capability is identified.

  2. Rate-dependent force, intracellular calcium, and action potential voltage alternans are modulated by sarcomere length and heart failure induced-remodeling of thin filament regulation in human heart failure: A myocyte modeling study.

    Science.gov (United States)

    Zile, Melanie A; Trayanova, Natalia A

    2016-01-01

    Microvolt T-wave alternans (MTWA) testing identifies heart failure patients at risk for lethal ventricular arrhythmias at near-resting heart rates (voltage alternans (APV-ALT), the cellular driver of MTWA. Our goal was to uncover the mechanisms linking APV-ALT and FORCE-ALT in failing human myocytes and to investigate how the link between those alternans was affected by pacing rate and by physiological conditions such as sarcomere length and heart failure induced-remodeling of mechanical parameters. To achieve this, a mechanically-based, strongly coupled human electromechanical myocyte model was constructed. Reducing the sarcoplasmic reticulum calcium uptake current (Iup) to 27% was incorporated to simulate abnormal calcium handling in human heart failure. Mechanical remodeling was incorporated to simulate altered thin filament activation and crossbridge (XB) cycling rates. A dynamical pacing protocol was used to investigate the development of intracellular calcium concentration ([Ca]i), voltage, and active force alternans at different pacing rates. FORCE-ALT only occurred in simulations incorporating reduced Iup, demonstrating that alternans in the intracellular calcium concentration (CA-ALT) induced FORCE-ALT. The magnitude of FORCE-ALT was found to be largest at clinically relevant pacing rates (<110 bpm), where APV-ALT was smallest. We found that the magnitudes of FORCE-ALT, CA-ALT and APV-ALT were altered by heart failure induced-remodeling of mechanical parameters and sarcomere length due to the presence of myofilament feedback. These findings provide important insight into the relationship between heart-failure-induced electrical and mechanical alternans and how they are altered by physiological conditions at near-resting heart rates.

  3. Radiation Effects on Breakdown Characteristics of Multi Guarded Devices

    CERN Document Server

    Da Rold, M; Bisello, D; Candelori, A; Da Re, A; Dalla Betta, Gian Franco; Paccagnella, A; Soncini, G; Verzellesi, G; Wheadon, R

    1997-01-01

    Multiguard structures are used in order to enhance the breakdown voltage of microstrip detectors. In this work we studied the electrical properties of devices designed in four different layouts on n-Si substrates, based on a central diode surrounded by various p+ and/or n+ floating rings. In particular we measured the main DC characteristics and we compared the experimental results with those simulated by a two-dimensional drift-diffusion computer model. Device noise was also measured for the central diode as a function of the applied voltage. We repeated all measurements after neutron and gamma irradiation, in view of the application of these devices to silicon microstrip detectors for future high energy physics experiments. For example at the LHC the level of radiation damage expected during the detector lifetime implies very high bias voltages for the detector operation. Multiguards can offer a solution, provided the optimisation of the design takes into account the radiation effects.

  4. Probabilistic description of traffic breakdowns.

    Science.gov (United States)

    Kühne, Reinhart; Mahnke, Reinhard; Lubashevsky, Ihor; Kaupuzs, Jevgenijs

    2002-06-01

    We analyze the characteristic features of traffic breakdown. To describe this phenomenon we apply the probabilistic model regarding the jam emergence as the formation of a large car cluster on a highway. In these terms, the breakdown occurs through the formation of a certain critical nucleus in the metastable vehicle flow, which enables us to confine ourselves to one cluster model. We assume that, first, the growth of the car cluster is governed by attachment of cars to the cluster whose rate is mainly determined by the mean headway distance between the car in the vehicle flow and, maybe, also by the headway distance in the cluster. Second, the cluster dissolution is determined by the car escape from the cluster whose rate depends on the cluster size directly. The latter is justified using the available experimental data for the correlation properties of the synchronized mode. We write the appropriate master equation converted then into the Fokker-Planck equation for the cluster distribution function and analyze the formation of the critical car cluster due to the climb over a certain potential barrier. The further cluster growth irreversibly causes jam formation. Numerical estimates of the obtained characteristics and the experimental data of the traffic breakdown are compared. In particular, we draw a conclusion that the characteristic intrinsic time scale of the breakdown phenomenon should be about 1 min and explain the case why the traffic volume interval inside which traffic breakdown is observed is sufficiently wide.

  5. Lightning-induced overvoltages in medium voltage distribution systems and customer experienced voltage spikes

    Energy Technology Data Exchange (ETDEWEB)

    Sabiha, N. A.

    2010-07-01

    In Finland, distribution transformers are frequently subjected to lightning strokes for which they are continuously protected by spark-gaps. So, the breakdown probability of medium voltage (MV) spark-gaps is modeled using the Gaussian distribution function under an impulse voltage test in accordance with the IEC 60060-1 standard. The model is presented in the form of the well-known Gaussian tail probability. Accordingly, a modified probabilistic model is proposed to study the effect of impulse voltage superimposed on the ac voltage on the breakdown probability of MV spark-gaps. The modified model is verified using experimental data, where the experimental setup is arranged to generate a range of impulse voltages superimposed on the ac voltages. The experimental verification shows evidence of the efficacy of the proposed probabilistic model. Furthermore, the proposed model is used to evaluate single-phase, two-phase and three-phase spark-gap breakdown probabilities in the case of lightning induced overvoltages. These breakdown probabilities are used along with the simplified Rusck expression to evaluate the performance of MV overhead lines above a perfectly conducting ground under lightning-induced overvoltages using a statistical approach. In order to study the overvoltages propagating through the transformer to its low voltage side, the high frequency model of the transformer is investigated. First, the investigation is carried out using model introduced by Piantini at no-load condition. This model is modified to take more than one resonance frequency into consideration. Therefore, the frequency response of the simulated transient voltage is improved. A verification of the modified model is carried out through the comparison between the experimental and simulation results, in which the time domain simulation is carried out using ATP/EMTP while MATLAB is used to identify the model parameters. As this model is found suitable only for unloaded transformer, an

  6. KH550-GO复合栅介质低压氧化物薄膜晶体管%Low-voltage oxide thin film transistor made of KH550-GO composite dielectrics

    Institute of Scientific and Technical Information of China (English)

    黄钰凯; 凌智勇; 邵枫; 温娟

    2016-01-01

    Spin coated-processed silane coupling agents (KH550-GO) composite proton conductor film shows a large specific gate capacitance of 2.18×10–6F/cm2due to the interfacial electric-double-layer effect. Low-voltage oxide (IZO) TFTs gated by a KH550-GO composite proton conductor film were self-assembled by only one shadow-mask. Electrical characteristics of the devices were measured by a Keithley 4200 SCS semiconductor parameter analyzer at room temperature under the condition of darkness. The results show that KH550-GO oxide thin film transistors possess good electrical properties, the operating voltage is only 2 V, the saturation current, the subthreshold gate voltage swing, the current on/off ratio, and the field-effect mobility are estimated to be 580 µA, 108 mV/dec, 4×107, and 16.7 cm2·V−1·s−1, respectively.%采用旋涂法制备硅烷偶联剂-氧化石墨烯(KH550-GO)新型复合栅介质薄膜,由于栅介质层和沟道层界面处明显的双电层效应,单位面积电容高达2.18×10–6 F/cm2。通过自组装法,借助磁控溅射仪,仅需一次掩膜,即可同时生成晶体管的沟道与源漏电极。利用半导体参数分析仪在室温黑暗的条件下测量该晶体管的电学特性,结果表明,KH550-GO栅介质氧化物薄膜晶体管具有优良的电学性能,其工作电压仅为2 V、饱和电流为580µA、亚阈值摆幅108 mV/dec、开关比4×107、场效应迁移率16.7 cm2·V−1·s−1。

  7. The Ultra-thin Main Insulation Structures Lapped with Dry-mica Tapes for High Voltage Motors%少胶绝缘高压电机超薄型主绝缘结构研究

    Institute of Scientific and Technical Information of China (English)

    曾彩萍

    2016-01-01

    Effect of the insulation materials and structures lapped with dry-mica tapes on the main insulation properties has been systematically investigated. The ultra-thin main insulation structures of 6 kV and 10 kV grades have been successfully manufactured by alternative half-overlapped with the designed glass or PET mica tapes, followed by VPI with anhydride-cured epoxy resins and corona protection with low electrical resistant materials, and exhibited excellent insulation properties and long thermo-electric aging life. The high voltage motors fabricated with the ultra-thin main insulation structures are lowered in the servicing temperature rise, obvious lightweight and reduced in production cost.%系统研究了绝缘材料及绕包结构等对高压电机主绝缘性能的影响。采用玻璃云母带与薄膜云母带为主绝缘绕包材料,通过交替半迭包工艺绕包的云母绝缘结构,经高性能环氧酸酐树脂( VPI)浸渍固化及薄型低阻防晕材料保护后制作的6 kV和10 kV超薄型高压电机主绝缘结构,表现出优良的电性能和老化寿命,实现了高压电机主绝缘的明显减薄。采用该超薄型绝缘结构制造的高压电机绕组温升显著降低,体积明显缩小,制造成本下降。

  8. Electrical characteristics of mixed Zr-Si oxide thin films prepared by ion beam induced chemical vapor deposition at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ferrer, F.J., E-mail: fjferrer@us.e [Centro Nacional de Aceleradores (CSIC - U. Sevilla), Av. Thomas A. Edison 7, E-41092 Sevilla (Spain); Frutos, F. [E.T.S. de Ingenieria Informatica, Avda. Reina Mercedes s/n, E-41012 Sevilla (Spain); Garcia-Lopez, J. [Centro Nacional de Aceleradores (CSIC - U. Sevilla), Av. Thomas A. Edison 7, E-41092 Sevilla (Spain); Jimenez, C. [Laboratoire de Materiaux et de Genie Physique, BP 257 - INPGrenoble Minatec - 3 parvis Louis Neel - 38016 Grenoble (France); Yubero, F. [Instituto de Ciencia de Materiales de Sevilla (CSIC - U. Sevilla), c/ Americo Vespucio 49, E-41092 Sevilla (Spain)

    2009-07-31

    Mixed Zr-Si oxide thin films have been prepared at room temperature by ion beam decomposition of organometallic volatile precursors. The films were flat and amorphous. They did not present phase segregation of the pure single oxides. A significant amount of impurities (-C-, -CH{sub x}, -OH, and other radicals coming from partially decomposed precursors) remained incorporated in the films after the deposition process. This effect is minimized if the Ar content in the O{sub 2}/Ar bombarding gas is maximized. Static permittivity and breakdown electrical field of the films were determined by capacitance-voltage and current-voltage electrical measurements. It is found that the static permittivity increases non-linearly from {approx} 4 for pure SiO{sub 2} to {approx} 15 for pure ZrO{sub 2}. Most of the dielectric failures in the films were due to extrinsic breakdown failures. The maximum breakdown electrical field decreases from {approx} 10.5 MV/cm for pure SiO{sub 2} to {approx} 45 MV/cm for pure ZrO{sub 2}. These characteristics are justified by high impurity content of the thin films. In addition, the analysis of the conduction mechanisms in the formed dielectrics is consistent to Schottky and Poole-Frenkel emission for low and high electric fields applied, respectively.

  9. Electrical breakdown in tissue electroporation.

    Science.gov (United States)

    Guenther, Enric; Klein, Nina; Mikus, Paul; Stehling, Michael K; Rubinsky, Boris

    2015-11-27

    Electroporation, the permeabilization of the cell membrane by brief, high electric fields, has become an important technology in medicine for diverse application ranging from gene transfection to tissue ablation. There is ample anecdotal evidence that the clinical application of electroporation is often associated with loud sounds and extremely high currents that exceed the devices design limit after which the devices cease to function. The goal of this paper is to elucidate and quantify the biophysical and biochemical basis for this phenomenon. Using an experimental design that includes clinical data, a tissue phantom, sound, optical, ultrasound and MRI measurements, we show that the phenomenon is caused by electrical breakdown across ionized electrolysis produced gases near the electrodes. The breakdown occurs primarily near the cathode. Electrical breakdown during electroporation is a biophysical phenomenon of substantial importance to the outcome of clinical applications. It was ignored, until now.

  10. Low voltage arc formation in railguns

    Science.gov (United States)

    Hawke, Ronald S.

    1987-01-01

    A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

  11. 50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

    KAUST Repository

    Emira, Ahmed

    2012-10-06

    In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

  12. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on dipolar copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede;

    2014-01-01

    Dielectric elastomers (DES) are a promising new transducer technology, but high driving voltages limit their current commercial potential. One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric permi......-4-nitrobenzene. Here, a high increase in dielectric permittivity (similar to 70%) was obtained without compromising other favourable DE properties such as elastic modulus, gel fraction, dielectric loss and electrical breakdown strength. © 2014 Elsevier Ltd. All rights reserved....

  13. White Paper on Multicarrier Excitation of Multipactor Breakdown: A Survey of Current Methods and Research Opportunities

    Science.gov (United States)

    2015-06-18

    AEROSPACE REPORT NO. TOR-2015-02548 White Paper on Multicarrier Excitation of Multipactor Breakdown: A Survey of Current Methods and...voltage phenomena where the verification power level is chosen such that the maximum instantaneous operational voltage in the component is excited . In...analysis methods under investigation for multicarrier excitation threshold prediction based on a survey of the research literature. In general, this

  14. Ac and Impulse Breakdown of Liquid Nitrogen at 77 K for Quasi-Uniform Field Gaps

    Science.gov (United States)

    James, D. R.; Sauers, I.; Ellis, A. R.; Schwenterly, S. W.; Tuncer, E.; Pleva, E.

    2008-03-01

    Liquid nitrogen (LN2) is commonly used both as a coolant and electrical insulation in high temperature superconductor (HTS) equipment for power applications. Hence it is necessary to know the electrical breakdown characteristics of LN2 under a variety of practical conditions. The ac breakdown and positive and negative polarity breakdown results for lightning impulse (1.2 microsecond rise time/50 microsecond fall time) are presented for LN2 using sphere to plane electrode geometry for sphere diameters of 50.8 and 101.6 mm over a gap range of 1 to 15 mm. Voltages up to 110 kVrms were studied for ac breakdown and up to 500-kV peak for impulse. In this work both the ac and impulse breakdown voltages scale approximately with distance over the limited gaps studied which is indicative of a quasi-uniform (near-uniform) electric field between sphere and plane. These measurements were conducted in a dewar which could be pressurized from 1 to 2 bar absolute which greatly reduces the spontaneous formation of bubbles that can occur in open LN2 bath experiments and thus potentially reduce the breakdown strength. Results from the pressurized system and near atmospheric pressure similar to an open bath are compared.

  15. Experimental study of polarity dependence in repetitive nanosecond-pulse breakdown

    Institute of Scientific and Technical Information of China (English)

    Shao Tao; Sun Guang-Sheng; Yan Ping; Wang Jue; Yuan Wei-Qun; Zhang Shi-Chang

    2007-01-01

    Pulsed breakdown of dry air at ambient pressure has been investigated in the point-plane geometry,using repetitive nanosecond pulses with 10 ns risetime,20-30 as duration,and up to 100 kV amplitude.A major concern in this paper is to study the dependence of breakdown strength on the point-electrode polarity.Applied voltage,breakdown current and repetitive stressing time are measured under the experimental conditions of some variables including pulse voltage peak,gap spacing and repetition rate.The results show that increasing the E-field strength can decrease breakdown time lag,repetitive stressing time and the number of applied pulses as expected.However,compared with the traditional polarity dependence it is weakened and not significant in the repetitive nanosecond-pulse breakdown.The ambiguous polaxity dependence in the experimental study is involved with an accumulation effect of residual charges and metastable states.Moreover,it is suggested that the reactions associated with the detachment of negative ions and impact deactivation of metastable specms could provide a source of primary initiating electrons for breakdown.

  16. Gas breakdown and plasma impedance in split-ring resonators

    Science.gov (United States)

    Hoskinson, Alan R.; Parsons, Stephen; Hopwood, Jeffrey

    2016-02-01

    The appearance of resonant structures in metamaterials coupled to plasmas motivates the systematic investigation of gas breakdown and plasma impedance in split-ring resonators over a frequency range of 0.5-9 GHz. In co-planar electrode gaps of 100 μm, the breakdown voltage amplitude decreases from 280 V to 225 V over this frequency range in atmospheric argon. At the highest frequency, a microplasma can be sustained using only 2 mW of power. At 20 mW, we measure a central electron density of 2 × 1020 m-3. The plasma-electrode overlap plays a key role in the microplasma impedance and causes the sheath impedance to dominate the plasma resistance at very low power levels. Contribution to the Topical Issue "Recent Breakthroughs in Microplasma Science and Technology", edited by Kurt Becker, Jose Lopez, David Staack, Klaus-Dieter Weltmann and Wei Dong Zhu.

  17. Accurate Switched-Voltage voltage averaging circuit

    OpenAIRE

    金光, 一幸; 松本, 寛樹

    2006-01-01

    Abstract ###This paper proposes an accurate Switched-Voltage (SV) voltage averaging circuit. It is presented ###to compensated for NMOS missmatch error at MOS differential type voltage averaging circuit. ###The proposed circuit consists of a voltage averaging and a SV sample/hold (S/H) circuit. It can ###operate using nonoverlapping three phase clocks. Performance of this circuit is verified by PSpice ###simulations.

  18. Electric breakdowns of the "plasma capacitors" occurs on insulation coating of the ISS surface

    Science.gov (United States)

    Homin, Taras; Korsun, Anatolii

    High electric fields and currents are occurred in the spacecrafts plasma environment by onboard electric generators. Thus the high voltage solar array (SA) of the American segment of International Space Station (ISS) generates potential 160 V. Its negative pole is shorted to the frames of all the ISS segments. There is electric current between the SA and the frame through the plasma environment, i.e. electric discharge occurs. As a result a potential drop exists between the frames of all the ISS segments and the environmental plasma [1], which is cathode drop potential varphi _{c} defined. When ISS orbiting, the φc varies greatly in the range 0-100 V. A large area of the ISS frames and SA surface is coated with a thin dielectric film. Because of cathode drop potential the frame surfaces accumulate ion charges and the SA surfaces accumulate electron charges. These surfaces become plasma capacitors, which accumulate much charge and energy. Micrometeorite impacts or buildup of potential drop in excess of breakdown threshold varphi_{b} (varphi _{c} > varphi _{b} = 60 V) may cause breakdowns of these capacitors. Following a breakdown, the charge collected at the surfaces disperses and transforms into a layer of dense plasma [2]. This plasma environment of the spacecraft produces great pulsed electric fields E at the frame surfaces as well as heavy currents between construction elements which in turn induce great magnetic fields H. Therefore the conductive frame and the environmental plasma is plasma inductors. We have calculated that the densities of these pulsing and high-frequency fields E and H generated in the plasma environment of the spacecraft may exceed values hazardous to human. Besides, these fields must induce large electromagnetic impulses in the space-suit and in the power supply and control circuits of onboard systems. During astronaut’s space-suit activity, these fields will penetrate the space-suit and the human body with possible hazardous effects

  19. In situ study on low-k interconnect time-dependent-dielectric-breakdown mechanisms

    Energy Technology Data Exchange (ETDEWEB)

    Boon Yeap, Kong, E-mail: KongBoon.Yeap@globalfoundries.com [GLOBALFOUNDRIES, Fab8, 400 Stonebreak Rd. Extension, Malta, New York 12020 (United States); Fraunhofer Institute for Ceramic Technologies and Systems, Maria-Reiche-Str. 2, D-01109 Dresden (Germany); Gall, Martin; Liao, Zhongquan; Sander, Christoph; Muehle, Uwe; Zschech, Ehrenfried [Fraunhofer Institute for Ceramic Technologies and Systems, Maria-Reiche-Str. 2, D-01109 Dresden (Germany); Justison, Patrick [GLOBALFOUNDRIES, Fab8, 400 Stonebreak Rd. Extension, Malta, New York 12020 (United States); Aubel, Oliver; Hauschildt, Meike; Beyer, Armand; Vogel, Norman [GLOBALFOUNDRIES Dresden Module One LLC and Co. KG, Wilschdorfer Landstr. 101, D-01109 Dresden (Germany)

    2014-03-28

    An in situ transmission-electron-microscopy methodology is developed to observe time-dependent dielectric breakdown (TDDB) in an advanced Cu/ultra-low-k interconnect stack. A test structure, namely a “tip-to-tip” structure, was designed to localize the TDDB degradation in small dielectrics regions. A constant voltage is applied at 25 °C to the “tip-to-tip” structure, while structural changes are observed at nanoscale. Cu nanoparticle formation, agglomeration, and migration processes are observed after dielectric breakdown. The Cu nanoparticles are positively charged, since they move in opposite direction to the electron flow. Measurements of ionic current, using the Triangular-Voltage-Stress method, suggest that Cu migration is not possible before dielectric breakdown, unless the Cu/ultra-low-k interconnect stacks are heated to 200 °C and above.

  20. Thermal Reversible Breakdown and Resistivity Switching in Hafnium Dioxide

    Directory of Open Access Journals (Sweden)

    N. Raghavan

    2012-03-01

    Full Text Available We present a model of thermal reversible breakdown via conductive filaments (CFs in hafnium dioxide (HfO2. These CFs appear as a result of electrical pretreatment of a metal/HfO2/metal (semiconductor nanostructure (MIM(S. The model is based on an assumption that the thermal reversible breakdown of a CF is due to of Joule heating displaying an exponential dependence of conductivity on temperature. The corresponding current-voltage characteristic and temperature of a CF in its middle and at the interface with an electrode are calculated taking into account the heat conduction equation and boundary conditions with heat dissipation via electrodes. It is found that the current-voltage characteristic of a CF has three specific regions. The initial and final regions have turned out to be linear with respect to the current and display different slopes, while the middle region is characterized by both the S-shaped and ultralinear dependences which are affected by the ambient temperature and nanostructure parameters. The switching potential from the high resistivity state (HRS to the low resistivity state (LRS was shown to decrease with the ambient temperature and with worsening of heat dissipation conditions. We present a model of thermal reversible breakdown via conductive filaments (CFs in hafnium dioxide (HfO2. These CFs appear as a result of electrical pretreatment of a metal/HfO2/metal (semiconductor nanostructure (MIM(S. The model is based on an assumption that the thermal reversible breakdown of a CF is due to of Joule heating displaying an exponential dependence of conductivity on temperature. The corresponding current-voltage characteristic and temperature of a CF in its middle and at the interface with an electrode are calculated taking into account the heat conduction equation and boundary conditions with heat dissipation via electrodes. It is found that the current-voltage characteristic of a CF has three specific regions. The initial and

  1. Experimental results with an optimized magnetic field configuration for JET breakdown

    NARCIS (Netherlands)

    Albanese, R.; Maviglia, F.; Lomas, P. J.; Manzanares, A.; Mattei, M.; Neto, A.; Rimini, F. G.; de Vries, P. C.; JET-EFDA Contributors,

    2012-01-01

    Experiments and modelling have been carried out to optimize the magnetic field null during breakdown at JET. Such optimization may prove to be essential for reliable plasma initiation at low voltages, e.g. in ITER where the value of the electric field available will be limited to 0.33 V&

  2. The influence of titanium dioxide additive on the short-term DC breakdown strength of polyethylene

    DEFF Research Database (Denmark)

    Khalil, M. S; Henk, Peter O; Henriksen, Mogens

    1990-01-01

    The effect of the addition of 1% by weight of titanium dioxide fine particles to low-density polyethylene (LDPE) on the short-term DC breakdown strength of the LDPE was investigated using direct and reverse polarity voltages. The samples used were cylinders of both plain and doped materials...

  3. Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

    CERN Document Server

    Bacchetta, N; Candelori, A; Da Rold, M; Descovich, M; Kaminski, A; Messineo, A; Rizzo, F; Verzellesi, G

    2001-01-01

    To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC. (3 refs).

  4. Partial Shade Stress Test for Thin-Film Photovoltaic Modules: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Silverman, Timothy J.; Deceglie, Michael G.; Deline, Chris; Kurtz, Sarah

    2015-09-02

    Partial shade of monolithic thin-film PV modules can cause reverse-bias conditions leading to permanent damage. In this work, we propose a partial shade stress test for thin-film PV modules that quantifies permanent performance loss. We designed the test with the aid of a computer model that predicts the local voltage, current and temperature stress that result from partial shade. The model predicts the module-scale interactions among the illumination pattern, the electrical properties of the photovoltaic material and the thermal properties of the module package. The test reproduces shading and loading conditions that may occur in the field. It accounts for reversible light-induced performance changes and for additional stress that may be introduced by light-enhanced reverse breakdown. We present simulated and experimental results from the application of the proposed test.

  5. Edge states and integer quantum Hall effect in topological insulator thin films.

    Science.gov (United States)

    Zhang, Song-Bo; Lu, Hai-Zhou; Shen, Shun-Qing

    2015-08-25

    The integer quantum Hall effect is a topological state of quantum matter in two dimensions, and has recently been observed in three-dimensional topological insulator thin films. Here we study the Landau levels and edge states of surface Dirac fermions in topological insulators under strong magnetic field. We examine the formation of the quantum plateaux of the Hall conductance and find two different patterns, in one pattern the filling number covers all integers while only odd integers in the other. We focus on the quantum plateau closest to zero energy and demonstrate the breakdown of the quantum spin Hall effect resulting from structure inversion asymmetry. The phase diagrams of the quantum Hall states are presented as functions of magnetic field, gate voltage and chemical potential. This work establishes an intuitive picture of the edge states to understand the integer quantum Hall effect for Dirac electrons in topological insulator thin films.

  6. Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices

    Science.gov (United States)

    Pejović, Milić M.; Denić, Dragan B.; Pejović, Momčilo M.; Nešić, Nikola T.; Vasović, Nikola

    2010-10-01

    This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven by TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.

  7. Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices

    Energy Technology Data Exchange (ETDEWEB)

    Pejovic, Milic M.; Denic, Dragan B.; Pejovic, Momcilo M.; Nesic, Nikola T.; Vasovic, Nikola [Faculty of Electronic Engineering, University of Nis, Aleksandra Medvedeva 14, 18000 Nis (Serbia)

    2010-10-15

    This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven by TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.

  8. Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices.

    Science.gov (United States)

    Pejović, Milić M; Denić, Dragan B; Pejović, Momčilo M; Nešić, Nikola T; Vasović, Nikola

    2010-10-01

    This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven by TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.

  9. Low-voltage operation of ZrO2-gated n-type thin-film transistors based on a channel formed by hybrid phases of SnO and SnO2.

    Science.gov (United States)

    Chu, Hsin-Chueh; Shen, Yung-Shao; Hsieh, Ching-Heng; Huang, Jia-Hong; Wu, Yung-Hsien

    2015-07-22

    With SnO typically regarded as a p-type oxide semiconductor, an oxide semiconductor formed by hybrid phases of mainly SnO and a small amount of SnO2 with an average [O]/[Sn] ratio of 1.1 was investigated as a channel material for n-type thin-film transistors (TFTs). Furthermore, an appropriate number of oxygen vacancies were introduced into the oxide during annealing at 400 °C in ambient N2, making both SnO and SnO2 favorable for current conduction. By using high-κ ZrO2 with a capacitance equivalent thickness of 13.5 nm as the gate dielectric, the TFTs processed at 400 °C demonstrated a steep subthreshold swing (SS) of 0.21 V/dec, and this can be ascribed to the large gate capacitance along with a low interface trap density (Dit) value of 5.16 × 10(11) cm(-2) eV(-1). In addition, the TFTs exhibit a relatively high electron mobility of 7.84 cm(2)/V·s, high ON/OFF current ratios of up to 2.5 × 10(5), and a low gate leakage current at a low operation voltage of 3 V. The TFTs also prove its high reliability performance by showing negligible degradation of SS and threshold voltage (VT) against high field stress (-10 MV/cm). When 3% oxygen annealing is combined with a thinner channel thickness, TFTs with even higher ION/IOFF ratios exceeding 10(7) can also be obtained. With these promising characteristics, the overall performance of the TFTs displays competitive advantages compared with other n-type TFTs formed on binary or even some multicomponent oxide semiconductors and paves a promising and economic avenue to implement an n-type oxide semiconductor without doping for production-worthy TFT technology. Most importantly, when combined with the typical SnO-based p-type oxide semiconductor, it would usher in a new era in achieving high-performance complementary metal oxide semiconductor circuits by using the same SnO-based oxide semiconductor.

  10. Electrical Breakdown Characteristic of Nanostructured W-Cu Contacts Materials

    Institute of Scientific and Technical Information of China (English)

    WANG Junbo; CHEN Wen'ge; DING Bingjun

    2006-01-01

    Nanostructured (NS) W- Cu composite powder was prepared by mechanical alloying ( MA ), and nanostructured bulk of W- Cu contact material was fabricated by hot press sintering in an electrical vacuum furnace. The microstructure, electric conductivity, hardness and break down voltage of NS W-Cu alloys were measured and compared to those of conventional W- Cu alloys prepared by powder metallurgy. The experimental results show that microstructural refinement and uniformity can improve the breakdown behavior and the electric arc stability of nanostructured W- Cu contacts materials. Also, the nanostructured W- Cu contact material shows the characteristic of spreading electric arcs, which is of benefit to electric arc erosion.

  11. An automatic method to analyze the Capacity-Voltage and Current-Voltage curves of a sensor

    CERN Document Server

    Matorras Cuevas, Pablo

    2017-01-01

    An automatic method to perform Capacity versus voltage analysis for all kind of silicon sensor is provided. It successfully calculates the depletion voltage to unirradiated and irradiated sensors, and with measurements with outliers or reaching breakdown. It is built using C++ and using ROOT trees with an analogous skeleton as TRICS, where the data as well as the results of the ts are saved, to make further analysis.

  12. Enhanced thermal stability and mechanical properties of nitrogen deficient titanium aluminum nitride (Ti0.54Al0.46Ny) thin films by tuning the applied negative bias voltage

    Science.gov (United States)

    Calamba, K. M.; Schramm, I. C.; Johansson Jõesaar, M. P.; Ghanbaja, J.; Pierson, J. F.; Mücklich, F.; Odén, M.

    2017-08-01

    Aspects on the phase stability and mechanical properties of nitrogen deficient (Ti0.54Al0.46)Ny alloys were investigated. Solid solution alloys of (Ti,Al)N were grown by cathodic arc deposition. The kinetic energy of the impinging ions was altered by varying the substrate bias voltage from -30 V to -80 V. Films deposited with a high bias value of -80 V showed larger lattice parameter, finer columnar structure, and higher compressive residual stress resulting in higher hardness than films biased at -30 V when comparing their as-deposited states. At elevated temperatures, the presence of nitrogen vacancies and point defects (anti-sites and self-interstitials generated by the ion-bombardment during coating deposition) in (Ti0.54Al0.46)N0.87 influence the driving force for phase separation. Highly biased nitrogen deficient films have point defects with higher stability during annealing, which cause a delay of the release of the stored lattice strain energy and then accelerates the decomposition tendencies to thermodynamically stable c-TiN and w-AlN. Low biased nitrogen deficient films have retarded phase transformation to w-AlN, which results in the prolongment of age hardening effect up to 1100 °C, i.e., the highest reported temperature for Ti-Al-N material system. Our study points out the role of vacancies and point defects in engineering thin films with enhanced thermal stability and mechanical properties for high temperature hard coating applications.

  13. Shaft Voltage and Life of Bearing electric-erosion for the Brushless DC Motor

    Science.gov (United States)

    Maetani, Tatsuo; Isomura, Yoshinori; Komiyama, Hiroshi; Morimoto, Shigeo

    This paper describes the life of noise of bearing electro-erosion in the shaft voltage of brushless DC motors. We confirmed that shaft voltage is suppressed to equal to or less than the dielectric breakdown voltage of bearing lubricant in the insulated rotor proposed for suppression of shaft voltage. However, since bearing electro-erosion appears over time along with the deterioration of noise performance, the threshold of the shaft voltage to secure noise performance over long periods of time is necessary. Therefore, the threshold of the shaft voltage that influences the life of noise was obtained in acceleration tests.

  14. A novel high voltage start up circuit for an integrated switched mode power supply

    Energy Technology Data Exchange (ETDEWEB)

    Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

  15. SEMICONDUCTOR DEVICES: A novel high voltage start up circuit for an integrated switched mode power supply

    Science.gov (United States)

    Hao, Hu; Xingbi, Chen

    2010-09-01

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.

  16. 一步掩膜法制备超低压ITO沟道纸上薄膜晶体管%One-shadow-mask ultralow-voltage indium-tin-oxide thin-film transistors on paper substrates

    Institute of Scientific and Technical Information of China (English)

    毛延凯; 蒋杰; 周斌; 窦威

    2012-01-01

    基于一步掩模法工艺制备了一种新型的纸上双电荷层超低压薄膜晶体管.在室温射频磁控溅射过程中,仅仅利用一块镍掩模板,就可同时沉积出氧化铟锡(ITO)源漏电极和ITO沟道.在此基础上,以等离子体增强化学气相沉积法(PECVD)合成的具有双电荷层效应的微孔SiO_2为栅介质,成功制备出以纸为衬底的超低压氧化物薄膜晶体管.这种晶体管显示出极好的性能:超低的工作电压1.5 V,场效应迁移率为20.1 cm~2/Vs,亚阈值斜率为188 mV/decade,开关电流比为5×10~5.这种基于全室温一步掩模法工艺制备的纸上氧化物薄膜晶体管具有工作电压低,工艺简单,成本低廉等优点,非常有望应用于未来便携式低功耗电子产品的制造中.%A new kind of electric-double-layer indium-tin-oxide(ITO) thin-film transistor(TFT) is fabricated on a paper substrate by one-shadow -mask process.The channel layer can be simultaneously self-assembled between ITO source/drain electrodes by only one shadow mask during RF magnetron sputtering deposition at room temperature.Base on this,we choose microporous SiC2 with electric double layer effect as a gate dielectric,and successfully develop the ultralow-voltage oxide TFT on a paper substrate.The TFT exhibits a good performance with an ultralow operation voltage of 1.5 V,a field-effect mobility of 20.1 cm~2/Vs,a subthreshold swing of 188mV/decade,and a large on-off ratio of 5 x 105.The full-room-temperature oxide TFT on the paper substrate by one-shadow-mask process shows a lot of advantages,such as low operation voltage,simple device process,low cost,etc.Such a TFT is very promising for the application of low-power and portable electronic products in the future.

  17. DC Breakdown Experiments with Iridium Cathode

    CERN Document Server

    Profatilova, Iaroslava; Korsback, Anders; Muranaka, Tomoko; Wuensch, Walter

    2015-01-01

    Electrical breakdown occurring in rf accelerating structures is one of the major disruptions of the accelerated beam in CLIC. At CERN, as complements to rf facilities, DC-spark systems have been used to study breakdown properties of many candidate materials for making rf components. In this note, measurements of conditioning speed, breakdown field and field enhancement factor of iridium are presented comparing with previously tested materials. The average breakdown field after conditioning reached 238 MV/m, which places iridium next to copper. By comparison with results and properties of other metals, the low breakdown field of iridium could be explained by its face-centred-cubic crystal structure.

  18. Tune in, breakdown, and reboot

    OpenAIRE

    Pedersen, Michael

    2009-01-01

    Routine work‐process, lack of self‐management, and long work‐hours have traditionally been the main topics of discussion within the occupational stress literature, constituting the primary factors that make people breakdown and burn out. But within the last couple of years, this discussion has expanded its focus from issues concerning the disciplinary work‐space. Increasing attention is now being placed on the problems related to the burgeoning interest in employee empowerme...

  19. Individual breakdown of pension rights

    CERN Multimedia

    2016-01-01

    You should have recently received, via email, your “Individual breakdown of pension rights”.   Please note that: the calculation was based on data as at 1st July 2016, as at 1st September 2016, CERN will introduce a new career structure; the salary position will now be expressed as a percentage of a midpoint of a grade.   We would like to draw your attention to the fact that your pension rights will remain unchanged. Benefits Service CERN Pension Fund

  20. DC breakdown experiments with cobalt electrodes

    CERN Document Server

    Descoeudres, Antoine; Nordlund, Kai

    2009-01-01

    RF accelerating structures of the Compact Linear Collider (CLIC) require a material capable of sustaining high electric field with a low breakdown rate and low induced damage. Because of the similarity of many aspects of DC and RF breakdown, a DC breakdown study is underway at CERN in order to test candidate materials and surface preparations, and have a better understanding of the breakdown mechanism under ultra-high vacuum in a simple setup. The conditioning speed, breakdown field and field enhancement factor of cobalt have been measured. The average breakdown field after conditioning reaches 615 MV/m, which places cobalt amongst the best materials tested so far. By comparison with results and properties of other metals, the high breakdown field of Co could be due to its high work function and maybe also to its hexagonal crystal structure. Geneva, Switzerland (June 2009) CLIC – Note – 875

  1. Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond

    Science.gov (United States)

    Teraji, Tokuyuki; Koizumi, Satoshi; Koide, Yasuo; Ito, Toshimichi

    2008-07-01

    The reverse current of lateral-type Schottky diodes fabricated on p-type homoepitaxial diamond was analyzed by changing the distance between Schottky and Ohmic electrodes and the metal materials in the Schottky electrodes. The maximum electric field at breakdown was 0.56 MV cm -1 for the Au Schottky contact and less than 0.26 MV cm -1 for the Al Schottky contact. The breakdown voltage depended on the electrode distance when the diamond surface was revealed in vacuum, whereas the Schottky diodes sustained the applied voltage of 500 V, corresponding to 0.69 MV cm -1, after covering of the diamond surface with an insulating liquid. Diamond surface protection is an indispensable technique for fabrication of high-voltage Schottky diodes based on diamond.

  2. Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown

    Energy Technology Data Exchange (ETDEWEB)

    Kuzmik, J., E-mail: jan.kuzmik@savba.sk; Jurkovič, M.; Gregušová, D.; Ťapajna, M. [Institute of Electrical Engineering SAS, Dubravska cesta 9, 841 04 Bratislava (Slovakia); Brunner, F.; Cho, M.; Würfl, J. [Ferdinand-Braun-Institute, Leibnitz Institute für Höchfrequenztechnik, Gustav-Kirchoff-Strasse 4, 12489 Berlin (Germany); Meneghesso, G. [Department of Information Engineering, University of Padova, via Gradenigo, 6/B 35131 Padova (Italy)

    2014-04-28

    We investigate degradation mechanisms in AlGaN/GaN HEMTs which were repeatedly driven into the current-controlled off-state breakdown or subject to 60 s voltage- or current-controlled off state stresses. The current-controlled sweep in to the breakdown allows the sustainability of breakdown that can not be observed in the voltage controlled sweep. Only temporal changes were observed in the HEMT dc performance after repetitive sweeps, which were explained by charging/discharging of the HEMT surface at the gate-to-drain access region and in the GaN buffer below the gate. Similar changes were observed also if high-voltage stress has been applied on the drain; however, permanent degradation appears after 60 s current-controlled breakdown stress. In this case, the drain leakage current, as well as the breakdown current, increases significantly. On the other hand, the breakdown voltage, as well as the gate characteristics, remains unaltered. We suggest that the avalanche-injection process is governing the off-state breakdown event with a dominant role of the potential barrier at the channel-buffer interface.

  3. DC-driven plasma gun: self-oscillatory operation mode of atmospheric-pressure helium plasma jet comprised of repetitive streamer breakdowns

    Science.gov (United States)

    Wang, Xingxing; Shashurin, Alexey

    2017-02-01

    This paper presents and studies helium atmospheric pressure plasma jet comprised of a series of repetitive streamer breakdowns, which is driven by pure DC high voltage (self-oscillatory behavior). The repetition frequency of the breakdowns is governed by the geometry of discharge electrodes/surroundings and gas flow rate. Each next streamer is initiated when the electric field on the anode tip recovers after the previous breakdown and reaches the breakdown threshold value of about 2.5 kV cm-1. One type of the helium plasma gun designed using this operational principle is demonstrated. The gun operates on about 3 kV DC high voltage and is comprised of the series of the repetitive streamer breakdowns at a frequency of about 13 kHz.

  4. Development of modulation strategies for NPC converter addressing DC link voltage balancing and CMV reduction

    DEFF Research Database (Denmark)

    Boian, D.; Biris, C.; Teodorescu, Remus

    2012-01-01

    in insulation breakdown and bearing failures. By the use of this type of converters, both Electromagnetic Interference (EMI) and harmonic distortions are improved. This paper proposes two modulation strategies for Three Level Neutral Point Clamped Converter (3L-NPC). The main focus of these modulation...... strategies is to reduce the Common Mode Voltage (CMV) and balance the DC Link Voltage....

  5. Field emission driven direct current argon discharges and electrical breakdown mechanism across micron scale gaps

    Science.gov (United States)

    Matejčik, Štefan; Radjenović, Branislav; Klas, Matej; Radmilović-Radjenović, Marija

    2015-11-01

    In this paper results of the experimental and theoretical studies of the field emission driven direct current argon microdischarges for the gaps between 1 μm and 100 μm are presented and discussed. The breakdown voltage curves and Volt-Ampere characteristics proved to be a fertile basis providing better understanding of the breakdown phenomena in microgaps. Based on the measured breakdown voltage curves, the effective yields have been estimated confirming that the secondary electron emission due to high electric field generated in microgaps depends primarily on the electric field leading directly to the violation of the Paschen's law. Experimental data are supported by the theoretical predictions that suggest departure from the scaling law and a flattening of the Paschen curves at higher pressures confirming that Townsend phenomenology breaks down when field emission becomes the key mechanism leading to the breakdown. Field emission of electrons from the cathode, the space charge effects in the breakdown and distinction between the Fowler-Nordheim field emission and the space charge limited current density are also analyzed. Images and Volt-Ampere characteristics recorded at the electrode gap size of 20 μm indicate the existence of a discharge region similar to arc at the pressure of around 200 Torr has been observed. Contribution to the Topical Issue "Recent Breakthroughs in Microplasma Science and Technology", edited by Kurt Becker, Jose Lopez, David Staack, Klaus-Dieter Weltmann and Wei Dong Zhu.

  6. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    OpenAIRE

    Masaharu Kobayashi; Toshiro Hiramoto

    2016-01-01

    Internet-of-Things (IoT) technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs) operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case o...

  7. Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors

    Science.gov (United States)

    Zervos, Ch; Adikimenakis, A.; Bairamis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.; Georgakilas, A.

    2016-06-01

    The current instabilities of high electron mobility transistors (HEMTs), based on thin double AlN/GaN/AlN heterostructures (˜0.5 μm total thickness), directly grown on sapphire substrates, have been analyzed and compared for different AlN top barrier thicknesses. The structures were capped by 1 nm GaN and non-passivated 1 μm gate-length devices were processed. Pulsed I-V measurements resulted in a maximum cold pulsed saturation current of 1.4 A mm-1 at a gate-source voltage of +3 V for 3.7 nm AlN thickness. The measured gate and drain lag for 500 ns pulse-width varied between 6%-12% and 10%-18%, respectively. Furthermore, a small increase in the threshold voltage was observed for all the devices, possibly due to the trapping of electrons under the gate contact. The off-state breakdown voltage of V br = 70 V, for gate-drain spacing of 2 μm, was approximately double the value measured for a single AlN/GaN HEMT structure grown on a thick GaN buffer layer. The results suggest that the double AlN/GaN/AlN heterostructures may offer intrinsic advantages for the breakdown and current stability characteristics of high current HEMTs.

  8. Dielectric breakdown strength of magnetic nanofluid based on insulation oil after impulse test

    Science.gov (United States)

    Nazari, M.; Rasoulifard, M. H.; Hosseini, H.

    2016-02-01

    In this study, the dielectric breakdown strength of magnetic nanofluids based on transformer mineral oil for use in power systems is reviewed. Nano oil samples are obtained from dispersion of the magnetic nanofluid within uninhibited transformer mineral oil NYTRO LIBRA as the base fluid. AC dielectric breakdown voltage measurement was carried out according to IEC 60156 standard and the lightning impulse breakdown voltage was obtained by using the sphere-sphere electrodes in an experimental setup for nano oil in volume concentration of 0.1-0.6%. Results indicate improved AC and lightning impulse breakdown voltage of nano oil compared to the base oil. AC test was performed again after applying impulse current and result showed that nano oil unlike the base oil retains its dielectric properties. Increase the dielectric strength of the nano oil is mainly due to dielectric and magnetic properties of Fe3O4 nanoparticles that act as free electrons snapper, and reduce the rate of free electrons in the ionization process.

  9. Experimental validation of prototype high voltage bushing

    Science.gov (United States)

    Shah, Sejal; Tyagi, H.; Sharma, D.; Parmar, D.; M. N., Vishnudev; Joshi, K.; Patel, K.; Yadav, A.; Patel, R.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A.

    2017-08-01

    Prototype High voltage bushing (PHVB) is a scaled down configuration of DNB High Voltage Bushing (HVB) of ITER. It is designed for operation at 50 kV DC to ensure operational performance and thereby confirming the design configuration of DNB HVB. Two concentric insulators viz. Ceramic and Fiber reinforced polymer (FRP) rings are used as double layered vacuum boundary for 50 kV isolation between grounded and high voltage flanges. Stress shields are designed for smooth electric field distribution. During ceramic to Kovar brazing, spilling cannot be controlled which may lead to high localized electrostatic stress. To understand spilling phenomenon and precise stress calculation, quantitative analysis was performed using Scanning Electron Microscopy (SEM) of brazed sample and similar configuration modeled while performing the Finite Element (FE) analysis. FE analysis of PHVB is performed to find out electrical stresses on different areas of PHVB and are maintained similar to DNB HV Bushing. With this configuration, the experiment is performed considering ITER like vacuum and electrical parameters. Initial HV test is performed by temporary vacuum sealing arrangements using gaskets/O-rings at both ends in order to achieve desired vacuum and keep the system maintainable. During validation test, 50 kV voltage withstand is performed for one hour. Voltage withstand test for 60 kV DC (20% higher rated voltage) have also been performed without any breakdown. Successful operation of PHVB confirms the design of DNB HV Bushing. In this paper, configuration of PHVB with experimental validation data is presented.

  10. Study of Edge Effects in the Breakdown Process of p+ on n-bulk Silicon Diodes

    CERN Document Server

    Borrello, L; Da Rold, M; Dell'Orso, R; Dutta, S; Messineo, A; Mihul, A; Militaru, O; Tonelli, G; Verdini, P G; Wheadon, R; Xie, Z

    1998-01-01

    The paper describes the role of the n+ edge implants in the breakdown process of p+ on n-bulk silicon diodes. Laboratory measurements and simulation studies are presented on a series of test structures aimed at an optimisation of the design in the edge region. The dependence of the breakdown voltage on the geometrical parameters of the devices is discussed in detail. Design rules are extracted for the use of n-wells along the scribe line to avoid surface conduction of current generated by the exposed edges. The effect of neutron irradiation has been studied up to a fluence 1.8*10^15 n/cm2.

  11. Synthesis mechanism of low-voltage praseodymium oxide doped zinc oxide varistor ceramics prepared through modified citrate gel coating.

    Science.gov (United States)

    Abdullah, Wan Rafizah Wan; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

    2012-01-01

    High demands on low-voltage electronics have increased the need for zinc oxide (ZnO) varistors with fast response, highly non-linear current-voltage characteristics and energy absorption capabilities at low breakdown voltage. However, trade-off between breakdown voltage and grain size poses a critical bottle-neck in the production of low-voltage varistors. The present study highlights the synthesis mechanism for obtaining praseodymium oxide (Pr(6)O(11)) based ZnO varistor ceramics having breakdown voltages of 2.8 to 13.3 V/mm through employment of direct modified citrate gel coating technique. Precursor powder and its ceramics were examined by means of TG/DTG, FTIR, XRD and FESEM analyses. The electrical properties as a function of Pr(6)O(11) addition were analyzed on the basis of I-V characteristic measurement. The breakdown voltage could be adjusted from 0.01 to 0.06 V per grain boundary by controlling the amount of Pr(6)O(11) from 0.2 to 0.8 mol%, without alteration of the grain size. The non-linearity coefficient, α, varied from 3.0 to 3.5 and the barrier height ranged from 0.56 to 0.64 eV. Breakdown voltage and α lowering with increasing Pr(6)O(11) content were associated to reduction in the barrier height caused by variation in O vacancies at grain boundary.

  12. Laser-Induced Breakdown in Liquid Helium

    Science.gov (United States)

    Sirisky, S.; Yang, Y.; Wei, W.; Maris, H. J.

    2017-10-01

    We report on experiments in which focused laser light is used to induce optical breakdown in liquid helium-4. The threshold intensity has been measured over the temperature range from 1.1 to 2.8 K with light of wavelength 1064 nm. In addition to the measurement of the threshold, we have performed experiments to study how the breakdown from one pulse modifies the probability that a subsequent pulse will result in breakdown.

  13. The Development of Breakdown in Transformer Oil

    Directory of Open Access Journals (Sweden)

    Jozef Kudelcik

    2007-01-01

    Full Text Available The conditions under which breakdown of composite liquid - solid insulation can be occurred, e.g. in transformer, play an important role in designing of such insulation. The initial state of breakdown development is explained based on development of streamers in cavitations. The whole breakdown development in transformer oil is represented by RLC circuit and it depends on the parameters of outer circuit.

  14. Investigation of the DC vacuum breakdown mechanism

    CERN Document Server

    Descoeudres, A; Calatroni, S; Taborelli, M; Wuensch, W

    2009-01-01

    Breakdowns occurring in rf accelerating structures will limit the ultimate performance of future linear colliders such as the Compact Linear Collider (CLIC). Because of the similarity of many aspects of dc and rf breakdown, a dc breakdown study is underway at CERN to better understand the vacuum breakdown mechanism in a simple setup. Measurements of the field enhancement factor β show that the local breakdown field is constant and depends only on the electrode material. With copper electrodes, the local breakdown field is around 10:8 GV/m, independent of the gap distance. The β value characterizes the electrode surface state, and the next macroscopic breakdown field can be well predicted. In breakdown rate experiments, where a constant field is applied to the electrodes, clusters of consecutive breakdowns alternate with quiet periods. The occurrence and lengths of these clusters and quiet periods depend on the evolution of β. The application of a high field can even modify the electrode surface in the abse...

  15. Work Breakdown Structure (WBS) Handbook

    Science.gov (United States)

    2010-01-01

    The purpose of this document is to provide program/project teams necessary instruction and guidance in the best practices for Work Breakdown Structure (WBS) and WBS dictionary development and use for project implementation and management control. This handbook can be used for all types of NASA projects and work activities including research, development, construction, test and evaluation, and operations. The products of these work efforts may be hardware, software, data, or service elements (alone or in combination). The aim of this document is to assist project teams in the development of effective work breakdown structures that provide a framework of common reference for all project elements. The WBS and WBS dictionary are effective management processes for planning, organizing, and administering NASA programs and projects. The guidance contained in this document is applicable to both in-house, NASA-led effort and contracted effort. It assists management teams from both entities in fulfilling necessary responsibilities for successful accomplishment of project cost, schedule, and technical goals. Benefits resulting from the use of an effective WBS include, but are not limited to: providing a basis for assigned project responsibilities, providing a basis for project schedule development, simplifying a project by dividing the total work scope into manageable units, and providing a common reference for all project communication.

  16. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    National Research Council Canada - National Science Library

    Kobayashi, Masaharu; Hiramoto, Toshiro

    2016-01-01

    Internet-of-Things (IoT) technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply...

  17. Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping

    Science.gov (United States)

    Liu, Chao; Liu, Zhaojun; Huang, Tongde; Ma, Jun; May Lau, Kei

    2015-03-01

    We report selective growth of AlGaN/GaN high electron mobility transistors (HEMTs) on InGaN/GaN light emitting diodes (LEDs) for monolithic integration of III-nitride HEMT and LED devices (HEMT-LED). To improve the breakdown characteristics of the integrated HEMT-LED devices, carbon doping was introduced in the HEMT buffer by controlling the growth pressure and V/III ratio. The breakdown voltage of the fabricated HEMTs grown on LEDs was enhanced, without degradation of the HEMT DC performance. The improved breakdown characteristics can be attributed to better isolation of the HEMT from the underlying conductive p-GaN layer of the LED structure.

  18. Transient Voltage Recorder

    Science.gov (United States)

    Medelius, Pedro J. (Inventor); Simpson, Howard J. (Inventor)

    2002-01-01

    A voltage transient recorder can detect lightning induced transient voltages. The recorder detects a lightning induced transient voltage and adjusts input amplifiers to accurately record transient voltage magnitudes. The recorder stores voltage data from numerous monitored channels, or devices. The data is time stamped and can be output in real time, or stored for later retrieval. The transient recorder, in one embodiment, includes an analog-to-digital converter and a voltage threshold detector. When an input voltage exceeds a pre-determined voltage threshold, the recorder stores the incoming voltage magnitude and time of arrival. The recorder also determines if its input amplifier circuits clip the incoming signal or if the incoming signal is too low. If the input data is clipped or too low, the recorder adjusts the gain of the amplifier circuits to accurately acquire subsequent components of the lightning induced transients.

  19. Breakdown of interdependent directed networks.

    Science.gov (United States)

    Liu, Xueming; Stanley, H Eugene; Gao, Jianxi

    2016-02-02

    Increasing evidence shows that real-world systems interact with one another via dependency connectivities. Failing connectivities are the mechanism behind the breakdown of interacting complex systems, e.g., blackouts caused by the interdependence of power grids and communication networks. Previous research analyzing the robustness of interdependent networks has been limited to undirected networks. However, most real-world networks are directed, their in-degrees and out-degrees may be correlated, and they are often coupled to one another as interdependent directed networks. To understand the breakdown and robustness of interdependent directed networks, we develop a theoretical framework based on generating functions and percolation theory. We find that for interdependent Erdős-Rényi networks the directionality within each network increases their vulnerability and exhibits hybrid phase transitions. We also find that the percolation behavior of interdependent directed scale-free networks with and without degree correlations is so complex that two criteria are needed to quantify and compare their robustness: the percolation threshold and the integrated size of the giant component during an entire attack process. Interestingly, we find that the in-degree and out-degree correlations in each network layer increase the robustness of interdependent degree heterogeneous networks that most real networks are, but decrease the robustness of interdependent networks with homogeneous degree distribution and with strong coupling strengths. Moreover, by applying our theoretical analysis to real interdependent international trade networks, we find that the robustness of these real-world systems increases with the in-degree and out-degree correlations, confirming our theoretical analysis.

  20. Study of Dielectric Breakdown Performance of Transformer Oil Based Magnetic Nanofluids

    Directory of Open Access Journals (Sweden)

    Yuzhen Lv

    2017-07-01

    Full Text Available Research on the transformer oil-based nanofluids (NFs has been raised expeditiously over the past decade. Although, there is discrepancy in the stated results and inadequate understanding of the mechanisms of improvement of dielectric nanofluids, these nanofluids have emerged as a potential substitute of mineral oils as insulating and heat removal fluids for high voltage equipment. The transformer oil (TO based magnetic fluids (ferrofluids may be regarded as the posterity insulation fluids as they propose inspiring unique prospectus to improve dielectric breakdown strength, as well as heat transfer efficiency, as compared to pure transformer oils. In this work, transformer oil-based magnetic nanofluids (MNFs are prepared by dispersal of Fe3O4 nanoparticles (MNPs into mineral oil as base oil, with various NPs loading from 5 to 80% w/v. The lightning impulse breakdown voltages (BDV measurement was conducted in accordance with IEC 60897 by using needle to sphere electrodes geometry. The test results showed that dispersion of magnetic NPs may improve the insulation strength of MO. With the increment of NPs concentrations, the positive lightning impulse (LI breakdown strength of TO is first raised, up to the highest value at 40% loading, and then tends to decrease at higher concentrations. The outcomes of negative LI breakdown showed that BDV of MNFs, with numerous loadings, were inferior to the breakdown strength of pure MO. The 40% concentration of nanoparticles (optimum concentration was selected, and positive and negative LI breakdown strength was also further studied at different sizes (10 nm, 20 nm, 30 nm and 40 nm of NPs and different electrode gap distances. Augmentation in the BDV of the ferrofluids (FFs is primarily because of dielectric and magnetic features of Fe3O4 nanoaprticles, which act as electron scavengers and decrease the rate of free electrons produced in the ionization process. Research challenges and technical difficulties

  1. Comparative study of electrical breakdown properties of deionized water and heavy water under pulsed power conditions

    Energy Technology Data Exchange (ETDEWEB)

    Veda Prakash, G.; Kumar, R.; Saurabh, K.; Nasir,; Anitha, V. P.; Chowdhuri, M. B.; Shyam, A. [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)

    2016-01-15

    A comparative study of electrical breakdown properties of deionized water (H{sub 2}O) and heavy water (D{sub 2}O) is presented with two different electrode materials (stainless steel (SS) and brass) and polarity (positive and negative) combinations. The pulsed (∼a few tens of nanoseconds) discharges are conducted by applying high voltage (∼a few hundred kV) pulse between two hemisphere electrodes of the same material, spaced 3 mm apart, at room temperature (∼26-28 °C) with the help of Tesla based pulse generator. It is observed that breakdown occurred in heavy water at lesser voltage and in short duration compared to deionized water irrespective of the electrode material and applied voltage polarity chosen. SS electrodes are seen to perform better in terms of the voltage withstanding capacity of the liquid dielectric as compared to brass electrodes. Further, discharges with negative polarity are found to give slightly enhanced discharge breakdown voltage when compared with those with positive polarity. The observations corroborate well with conductivity measurements carried out on original and post-treated liquid samples. An interpretation of the observations is attempted using Fourier transform infrared measurements on original and post-treated liquids as well as in situ emission spectra studies. A yet another important observation from the emission spectra has been that even short (nanosecond) duration discharges result in the formation of a considerable amount of ions injected into the liquid from the electrodes in a similar manner as reported for long (microseconds) discharges. The experimental observations show that deionised water is better suited for high voltage applications and also offer a comparison of the discharge behaviour with different electrodes and polarities.

  2. Pre-breakdown cavitation development in the dielectric fluid in the inhomogeneous, pulsed electric fields

    CERN Document Server

    Shneider, Mikhail N

    2014-01-01

    We consider the development of pre-breakdown cavitation nanopores appearing in the dielectric fluid under the influence of the electrostrictive stresses in the inhomogeneous pulsed electric field. It is shown that three characteristic regions can be distinguished near the needle electrode. In the first region, where the electric field gradient is greatest, the cavitation nanopores, occurring during the voltage nanosecond pulse, may grow to the size at which an electron accelerated by the field inside the pores can acquire enough energy for excitation and ionization of the liquid on the opposite pore wall, i.e., the breakdown conditions are satisfied. In the second region, the negative pressure caused by the electrostriction is large enough for the cavitation initiation (which can be registered by optical methods), but, during the voltage pulse, the pores do not reach the size at which the potential difference across their borders becomes sufficient for ionization or excitation of water molecules. And, in the ...

  3. Experimental study of electric breakdowns in liquid argon at centimeter scale

    CERN Document Server

    Blatter, A; Hsu, C -C; Janos, S; Kreslo, I; Luethi, M; von Rohr, C Rudolf; Schenk, M; Strauss, T; Weber, M S; Zeller, M

    2014-01-01

    In this paper we present results on measurements of the dielectric strength of liquid argon near its boiling point and cathode-anode distances in the range of 0.1 mm to 40 mm with spherical cathode and plane anode. We show that at such distances the applied electric field at which breakdowns occur is as low as 40 kV/cm. Flash-overs across the ribbed dielectric of the high voltage feed-through are observed for a length of 300 mm starting from a voltage of 55 kV. These results contribute to set reference for the breakdown-free design of ionization detectors, such as Liquid Argon Time Projection Chambers (LAr TPC).

  4. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep, E-mail: djena@cornell.edu [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States); Bader, Samuel [Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  5. Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients

    Science.gov (United States)

    Driche, Khaled; Umezawa, Hitoshi; Rouger, Nicolas; Chicot, Gauthier; Gheeraert, Etienne

    2017-04-01

    Diamond has the advantage of having an exceptionally high critical electric field owing to its large band gap, which implies its high ability to withstand high voltages. At this maximum electric field, the operation of Schottky barrier diodes (SBDs), as well as FETs, may be limited by impact ionization, leading to avalanche multiplication, and hence the devices may breakdown. In this study, three of the reported impact ionization coefficients for electrons, αn, and holes, αp, in diamond at room temperature (300 K) are analyzed. Experimental data on reverse operation characteristics obtained from two different diamond SBDs are compared with those obtained from their corresponding simulated structures. Owing to the crucial role played by the impact ionization rate in determining the carrier transport, the three reported avalanche parameters implemented affect the behavior not only of the breakdown voltage but also of the leakage current for the same structure.

  6. New models and distributions of the electrical breakdown time delay in neon

    Energy Technology Data Exchange (ETDEWEB)

    Stamenkovic, S N, E-mail: ssuzana@pmf.ni.ac.rs [Department of Physics, University of Nis, P.O. BOX 224, 18001 Nis (Serbia)

    2010-11-01

    The measurements of the electrical breakdown time delay t{sub d} for a wide range of working voltages and at different preionization levels are presented. The statistical breakdown time delay t{sub s} and the discharge formative time t{sub f} are experimentally separated and theoretical models of their dependencies on the overvoltage and number densities of residual charges during relaxation are suggested. Several empirical and semiempirical models are used to describe the formative time delay dependence on working voltages t{sub f} (U). The empirical and theoretical models from the literature are also applied to the experimental data, without and with empirical corrections. Moreover, several new distributions are experimentally obtained: Gauss-exponential, Gaussian and double Gaussian ones for the statistical time delay, as well as Gaussian and double Gaussian distributions for the formative time. The measurements of the breakdown time delay at different preionization levels (afterglow periods) t{sub d} ({tau}) obtained with a galvanic layer of gold and a sub-layer of nickel on the copper cathode are compared to the measurements with a vacuum deposited gold layer on the cathode surface. It was found that the surface charges retaining on a galvanic layer of gold influence the breakdown time delay which leads to double Gaussian distributions of the formative and statistical time delay.

  7. AC electrical breakdown phenomena of epoxy/layered silicate nanocomposite in needle-plate electrodes.

    Science.gov (United States)

    Park, Jae-Jun; Lee, Jae-Young

    2013-05-01

    Epoxy/layered silicate nanocomposite for the insulation of heavy electric equipments were prepared by dispersing 1 wt% of a layered silicate into an epoxy matrix with a homogenizing mixer and then AC electrical treeing and breakdown tests were carried out. Wide-angle X-ray diffraction (WAXD) analysis and transmission electron microscopy (TEM) observation showed that nano-sized monolayers were exfoliated from a multilayered silicate in the epoxy matrix. When the nano-sized silicate layers were incorporated into the epoxy matrix, the breakdown rate in needle-plate electrode geometry was 10.6 times lowered than that of the neat epoxy resin under the applied electrical field of 520.9 kV/mm at 30 degrees C, and electrical tree propagated with much more branches in the epoxy/layered silicate nanocomposite. These results showed that well-dispersed nano-sized silicate layers retarded the electrical tree growth rate. The effects of applied voltage and ambient temperature on the tree initiation, growth, and breakdown rate were also studied, and it was found that the breakdown rate was largely increased, as the applied voltage and ambient temperature increased.

  8. Breakdown field enhancement of Si-based MOS capacitor by post-deposition annealing of the reactive sputtered ZrOxNy gate oxide

    Science.gov (United States)

    Chew, Chun Chet; Goh, Kian Heng; Gorji, Mohammad Saleh; Tan, Chee Ghuan; Ramesh, S.; Wong, Yew Hoong

    2016-02-01

    Zirconium oxynitride (ZrOxNy) thin films were deposited on silicon (100) substrates by radio frequency-reactive magnetron sputtering in an argon-oxygen-nitrogen atmosphere. Post-deposition annealing (PDA) process was performed in argon ambient at various annealing temperatures (500, 600, 700 and 800 °C) for 15 min. Metal-oxide-semiconductor capacitors were then fabricated with aluminum as the gate electrode. The effects of PDA process on the thin film's structural and electrical properties of the samples were investigated. The structural properties of the deposited films have been evaluated by atomic force microscopy, Fourier transform infrared spectroscopy and Raman spectroscopy. On the other hand, the electrical characterization of the film was conducted by current-voltage analysis. The Raman results revealed that (600-800 °C) annealed samples comprised of crystalline multiphase films (t-ZrO2, fcc-ZrN and bcc γ-Zr2ON2). Interfacial layer consisted of Zr-Si-O, Si-O-N and Si-O phase was formed for all investigated samples, and interfacial layer growth was suppressed when annealed at lower temperatures (500 °C). Electrical result revealed that the sample annealed at a relatively low temperature of 500 °C has demonstrated the highest breakdown field which was attributed to the low surface roughness, the low interface trap and the highly amorphous multiphase film.

  9. Improving thrust by pulse-induced breakdown enhancement in AC surface dielectric barrier discharge actuators for airflow control

    Science.gov (United States)

    Yan, Huijie; Yang, Liang; Qi, Xiaohua; Ren, Chunsheng

    2016-07-01

    The characteristics of a plate-to-plate AC surface dielectric barrier discharge (SDBD) actuator using the pulse-induced breakdown enhancing method are experimentally investigated. The encapsulated electrode is supplied with a sine high AC voltage, while the exposed electrode is feed by a synchronized pulse voltage. Based on the thrust force and power consumption measurements, a parametric study was performed using a positive pulse applied at the trough phase of the AC cycles in which the thrust force was observed to increase by about 100% to 300% and the efficiency up to about 100% compared with the AC-only supply conditions for different AC voltages within the tested range. The pulse-induced breakdown effect was analyzed from the electrical and light emission waveforms to reveal the underlying mechanism. The surface potential due to the charge deposition effect was also measured using a specially designed corona-like discharge potential probe. It is shown that the pulse-induced breakdown was able to cause a temporarily intensified local electric field to enhance the glow-like discharge and meanwhile increase the time-average surface potential in the region further downstream. The improvement in the force by the enhancement in the pulse-induced breakdown was mainly due to enhancements in the glow-like discharge and the surface potential increment, with the latter being more important when the AC voltage is higher.

  10. Corrosion of Copper and Oxidation of Dielectric Liquids in High Voltage Transformers

    OpenAIRE

    Tronstad, Ingvild

    2013-01-01

    Breakdowns in high voltage transformers are of major concern. It is therefore a goal to prevent this from happening. Chemical degradation (e.g. oxidation, hydrolysis and corrosion) of the insulation systems and windings and formation of deposits are some of the most important causes of breakdowns in oil-paper insulated transformers.Several of the methods for studying the oxidation stability of dielectric liquids are time consuming and involve harsh conditions, far from the conditions in the t...

  11. Pulse, dc and ac breakdown in high pressure gas discharge lamps

    Science.gov (United States)

    Beckers, J.; Manders, F.; Aben, P. C. H.; Stoffels, W. W.; Haverlag, M.

    2008-07-01

    An optical study of pulse, dc, and ac (50-400 kHz) ignition of metal halide lamps has been performed by investigating intensified CCD camera images of the discharges. The ceramic lamp burners were filled with xenon gas at pressures of 300 and 700 mbar. In comparison with dc and pulse ignition, igniting with an ac voltage decreases the ignition voltage by up to 56% and the breakdown time scales get much longer (~10-3 s compared with ~10-7 s for pulse ignition). Increasing the ac frequency decreases the ignition voltages and changes the ionization channel shapes. External irradiation of UV light can have either an increasing or a decreasing effect on ignition voltages.

  12. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  13. Enhanced breakdown strength of multilayered films fabricated by forced assembly microlayer coextrusion

    Energy Technology Data Exchange (ETDEWEB)

    Mackey, Matt; Hiltner, Anne; Baer, Eric [Department of Macromolecular Science and Engineering, Case Western Reserve University, Cleveland, OH 44106-7202 (United States); Flandin, Lionel [LMOPS UMR 5041, CNRS Universite de Savoie, F-73376 Le Bourget Du Lac Cedex (France); Wolak, Mason A; Shirk, James S, E-mail: Anne.Hiltner@cwru.ed [US Naval Research Laboratory, Washington, DC 20375 (United States)

    2009-09-07

    There is a need in electronic systems and pulsed power applications for capacitors with high energy density. From a material standpoint, capacitive energy density improves with increasing dielectric constant and/or breakdown strength. Current state-of-the-art polymeric capacitors are, however, limited in that their dielectric constant is low (2-4). Our approach to improve polymer film capacitors is to combine, through microlayer coextrusion, two polymers with complementary properties: one with a high breakdown strength (polycarbonate) and one with a high dielectric constant (polyvinylidene fluoride-hexafluoropropylene). As opposed to the monolith controls, multilayered films with various numbers of layers and compositions subjected to a pulsed voltage exhibit treeing patterns that hinder the breakdown process. Consequently, substantially enhanced breakdown strengths are measured in the mutilayered films. It is further shown, by varying the overall film thickness, that the charge at the tip of the needle electrode is a key parameter that controls treeing. Based on the acquired data, a breakdown mechanism is formulated to explain the increased dielectric strengths. Using the understanding gained from these systems, selection and optimization of future layered structures can be carried out to obtain additional property enhancements.

  14. The influence of Ac parameters in the process of micro-arc oxidation film electric breakdown

    Directory of Open Access Journals (Sweden)

    Ma Jin

    2016-01-01

    Full Text Available This paper studies the electric breakdown discharge process of micro-arc oxidation film on the surface of aluminum alloy. Based on the analysis of the AC parameters variation in the micro-arc oxidation process, the following conclusions can be drawn: The growth of oxide film can be divided into three stages, and Oxide film breakdown discharge occurs twice in the micro-arc oxidation process. The first stage is the formation and disruptive discharge of amorphous oxide film, producing the ceramic oxide granules, which belong to solid dielectric breakdown. In this stage the membrane voltage of the oxide film plays a key role; the second stage is the formation of ceramic oxide film, the ceramic oxide granules turns into porous structure oxide film in this stage; the third stage is the growth of ceramic oxide film, the gas film that forms in the oxide film’s porous structure is electric broken-down, which is the second breakdown discharge process, the current density on the oxide film surface could affect the breakdown process significantly.

  15. Mixed voltage VLSI design

    Science.gov (United States)

    Panwar, Ramesh; Rennels, David; Alkalaj, Leon

    1993-01-01

    A technique for minimizing the power dissipated in a Very Large Scale Integration (VLSI) chip by lowering the operating voltage without any significant penalty in the chip throughput even though low voltage operation results in slower circuits. Since the overall throughput of a VLSI chip depends on the speed of the critical path(s) in the chip, it may be possible to sustain the throughput rates attained at higher voltages by operating the circuits in the critical path(s) with a high voltage while operating the other circuits with a lower voltage to minimize the power dissipation. The interface between the gates which operate at different voltages is crucial for low power dissipation since the interface may possibly have high static current dissipation thus negating the gains of the low voltage operation. The design of a voltage level translator which does the interface between the low voltage and high voltage circuits without any significant static dissipation is presented. Then, the results of the mixed voltage design using a greedy algorithm on three chips for various operating voltages are presented.

  16. Extended scaling and Paschen law for micro-sized radiofrequency plasma breakdown

    Science.gov (United States)

    Lee, Min Uk; Lee, Jimo; Lee, Jae Koo; Yun, Gunsu S.

    2017-03-01

    The single particle motion analysis and particle-in-cell merged with Monte Carlo collision (PIC/MCC) simulations are compared to explain substantial breakdown voltage reduction for helium microwave discharge above a critical frequency corresponding to the transition from the drift-dominant to the diffusion-dominant electron loss regime. The single particle analysis suggests that the transition frequency is proportional to the product of {p}-{m} and {d}-({m+1)} where p is the neutral gas pressure, d is the gap distance, and m is a numerical parameter, which is confirmed by the PIC simulation. In the low-frequency or drift-dominant regime, i.e., γ - {{r}}{{e}}{{g}}{{i}}{{m}}{{e}}, the secondary electron emission induced by ion drift motion is the key parameter for determining the breakdown voltage. The fluid analysis including the secondary emission coefficient, γ , induces the extended Paschen law that implies the breakdown voltage is determined by pd, f/p, γ , and d/R where f is the frequency of the radio or microwave frequency source, and R is the diameter of electrode. The extended Paschen law reproduces the same scaling law for the transition frequency and is confirmed by the independent PIC and fluid simulations.

  17. Control of vortex breakdown in a closed cylinder with a rotating lid

    DEFF Research Database (Denmark)

    Jørgensen, Bo Hoffmann; Sørensen, Jens Nørkær; Aubry, Nadine

    2010-01-01

    The flow within a closed cylinder with a rotating lid is considered as a prototype for fundamental studies of vortex breakdown. Numerical simulations for various parameter values have been carried out to reproduce the known effect of a thin rotating rod positioned along the center axis as well...... as analyze the influence of local vorticity sources. As expected, the results show that the breakdown bubbles in the steady axisymmetric flow can be affected dramatically, i.e., fully suppressed or significantly enhanced, by rotating the rod. The main contribution of this article is to show that the observed...... behavior can be explained by the vorticity generated by the rod locally near the rotating lid and near the fixed lid, as analogous behavior is caused by the introduction of local vorticity sources in the flow without a rod. Moreover, we describe the influence on the breakdown bubbles of the vorticity...

  18. High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

    Science.gov (United States)

    Cho, Doohyung; Sim, Seulgi; Park, Kunsik; Won, Jongil; Kim, Sanggi; Kim, Kwangsoo

    2015-12-01

    In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure. The ESL-TMBS rectifier has a 7.4% lower forward voltage drop and a 24% higher breakdown voltage. However, this structure has a reverse leakage current that is approximately three times higher than that of a conventional TMBS rectifier owing to the reduction in energy barrier height. This problem is solved when ESL is used partially, since its use provides a reverse leakage current that is comparable to that of a conventional TMBS rectifier. Thus, the forward voltage drop and breakdown voltage improve without any loss in static and dynamic characteristics in the ESL-TMBS rectifier compared with the performance of a conventional TMBS rectifier.

  19. ASPECTS OF SURGE ARRESTERS’ MAXIMUM OPERATING VOLTAGE CHOICE FOR ELECTRICAL EQUIPMENT INSULATION PROTECTION IN 6-35 KV MAINS

    Directory of Open Access Journals (Sweden)

    Yu. N. Shumilov

    2013-09-01

    Full Text Available The paper shows that, in 6-35 kV mains, application of a non-linear surge arrester (SA with the maximum continuous admissible operating voltage which is 10% higher than the mains’ maximum operating voltage results in the SA protection from overheating and subsequent breakdown at nonnormable lifetime of single-phase arc faults.

  20. Low voltage operation of plasma focus.

    Science.gov (United States)

    Shukla, Rohit; Sharma, S K; Banerjee, P; Das, R; Deb, P; Prabahar, T; Das, B K; Adhikary, B; Shyam, A

    2010-08-01

    Plasma foci of compact sizes and operating with low energies (from tens of joules to few hundred joules) have found application in recent years and have attracted plasma-physics scientists and engineers for research in this direction. We are presenting a low energy and miniature plasma focus which operates from a capacitor bank of 8.4 muF capacity, charged at 4.2-4.3 kV and delivering approximately 52 kA peak current at approximately 60 nH calculated circuit inductance. The total circuit inductance includes the plasma focus inductance. The reported plasma focus operates at the lowest voltage among all reported plasma foci so far. Moreover the cost of capacitor bank used for plasma focus is nearly 20 U.S. dollars making it very cheap. At low voltage operation of plasma focus, the initial breakdown mechanism becomes important for operation of plasma focus. The quartz glass tube is used as insulator and breakdown initiation is done on its surface. The total energy of the plasma focus is approximately 75 J. The plasma focus system is made compact and the switching of capacitor bank energy is done by manual operating switch. The focus is operated with hydrogen and deuterium filled at 1-2 mbar.

  1. Electrical breakdown phenomena of dielectric elastomers

    DEFF Research Database (Denmark)

    Yu, Liyun; Mateiu, Ramona Valentina; Skov, Anne Ladegaard

    years. However, optimization with respect to the dielectric permittivity solely may lead to other problematic phenomena such as premature electrical breakdown. In this work, we focus on the chloro propyl functionalized silicone elastomers prepared in Madsen et al[2] and we investigate the electrical...... breakdown patterns of two similar chloro propyl functionalized silicone elastomers which break down electrically in a rather different way as well as we compare them to a silicone based reference. Scanning Electron Microscopy (SEM) and Energy Dispersive X-Ray Spectroscopy (EDS) are used to evaluate...... the elastomers after electrical breakdown....

  2. Quantitative Outgassing studies in DC Electrical breakdown

    CERN Document Server

    Levinsen, Yngve Inntjore; Calatroni, Sergio; Taborelli, Mauro; Wünsch, Walter

    2010-01-01

    Breakdown in the accelerating structures sets an important limit to the performance of the CLIC linear collider. Vacuum degradation and subsequent beam instability are possible outcomes of a breakdown if too much gas is released from the cavity surface. Quantitative data of gas released by breakdowns are provided for copper (milled Cu-OFE, as-received and heat-treated), and molybdenum. These data are produced in a DC spark system based on a capacitance charged at fixed energy, and will serve as a reference for the vacuum design of the CLIC accelerating structures.

  3. Microwave gas breakdown in elliptical waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Koufogiannis, I. D.; Sorolla, E., E-mail: eden.sorolla@epfl.ch; Mattes, M. [École Polytechnique Fédérale de Lausanne, Laboratoire d’Électromagnétisme et d' Acoustique (LEMA), Station 11, CH-1015 Lausanne (Switzerland)

    2014-01-15

    This paper analyzes the microwave gas discharge within elliptical waveguides excited by the fundamental mode. The Rayleigh-Ritz method has been applied to solve the continuity equation. The eigenvalue problem defined by the breakdown condition has been solved and the effective diffusion length of the elliptical waveguide has been calculated, what is used to find the corona threshold. This paper extends the microwave breakdown model developed for circular waveguides and shows the better corona withstanding capabilities of elliptical waveguides. The corona breakdown electric field threshold obtained with the variational method has been compared with the one calculated with the Finite Elements Method, showing excellent agreement.

  4. The Multistability of Technological Breakdowns in Education

    DEFF Research Database (Denmark)

    Andersen, Bjarke Lindsø; Tafdrup, Oliver Alexander

    2017-01-01

    technological breakdowns become a more and more ubiquitous phenomenon due to the rapid increase of technological artefacts utilized for educational purposes (Riis, 2012). The breakdowns impact the educational practice with consequences ranging from creating small obstacles to rendering it impossible to conduct......Introduction Everyone who is involved with modern technological artefacts such as computers, software and tablets has experienced situations where the artefacts suddenly cease to function properly. This is commonly known as a technological breakdown. Within education and the praxis of teaching...

  5. Structural and electrical properties of Ta2O5 thin films prepared by photo-induced CVD

    Indian Academy of Sciences (India)

    Jun Liu; Aixiang Wei; Xianghui Zhao; Haiyan Zhang

    2011-06-01

    Tantalum oxide (Ta2O5) films and Al/Ta2O5/Si MOS capacitors were prepared at various powers by ultraviolet photo-inducing hot filament chemical vapour deposition (HFCVD). Effects of ultraviolet light powers on the structure and electrical properties of Ta2O5 thin films were studied using X-ray diffraction (XRD) and atomic forcemicroscopy (AFM). The dielectric constant, leakage current density and breakdown electric field of the samples were studied by the capacitance–voltage (C–V) and current–voltage (–) measurements of the Al/Ta2O5/Si MOS capacitors. Results show that the Ta2O5 thin films grown without inducement of UV light belong to amorphous phase, whereas the samples grown with inducement of UV-light belong to -Ta2O5 phase. The dielectric constant and leakage current density of the Ta2O5 thin films increase with increasing powers of the UV- lamps. Effects of UVlamp powers on the structural and electrical properties were discussed.

  6. Voltage holding optimization of the MITICA electrostatic accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Pilan, N., E-mail: nicola.pilan@igi.cnr.it [Consorzio RFX, Associazione EURATOM-ENEA sulla Fusione, Corso Stati Uniti 4, I-35127 Padova (Italy); Bettini, P. [Consorzio RFX, Associazione EURATOM-ENEA sulla Fusione, Corso Stati Uniti 4, I-35127 Padova (Italy); DII, Università di Padova, v. Gradenigo 6/A, I-35131 Padova (Italy); De Lorenzi, A. [Consorzio RFX, Associazione EURATOM-ENEA sulla Fusione, Corso Stati Uniti 4, I-35127 Padova (Italy); Specogna, R. [DIEGM, Università di Udine, v. delle Scienze 208, I-33100 Udine (Italy)

    2013-10-15

    Highlights: ► A set of electrostatic analyses of the region surrounding the MITICA electrostatic accelerator has been carried out. ► The distribution of the breakdown probability of the system has been calculated. ► The analyses have allowed identifying the weak point of the system to address the future design optimizations. -- Abstract: Two Heating Neutral Beam Injectors (H-NBI) are planned to be installed in ITER with a total delivered heating power of 33 MW [1]. The main parameters are: 870 kV acceleration voltage with 46 A beam current for hydrogen beam, and 1 MV voltage with 40 A current for deuterium beam. The voltage holding in the 1 MV ITER Neutral Beam Accelerator is recognized to be one of the most critical issues for long pulse (3600 s) beam operation, due to the complex electrostatic structure formed by electrodes polarized at different potentials immersed in vacuum or low-pressure gas. As a matter of fact, the system shall work in a p × d range at the left of the Paschen curve where the classical Townsend breakdown criterion is no longer valid. The voltage holding is governed by the mechanism of the long gap insulation in high vacuum, not yet well consolidated from the physical point of view. This paper is aimed to describe the optimization of the voltage holding capability for MITICA electrostatic accelerator. The results of this analysis will constitute the input for the probabilistic model [3] which is adopted to predict the breakdown probability by means of 2D analyses of the multi electrode – multi voltage system.

  7. Family breakdown in Bogotá

    Directory of Open Access Journals (Sweden)

    Ofelia Restrepo Vélez

    2010-02-01

    Full Text Available Forced displacement not only disperses and uproots families butalso fractures their framework of beliefs, identities, daily routines,relationships and social fabric, and causes physical, emotional andpsychological breakdown.

  8. Advances in high voltage insulation and arc interruption in SF6 and vacuum

    CERN Document Server

    Maller, V N

    1982-01-01

    Advances in High Voltage Insulation and Arc Interruption in SF6 and Vacuum deals with high voltage breakdown and arc extinction in sulfur hexafluoride (SF6) and high vacuum, with special emphasis on the application of these insulating media in high voltage power apparatus and devices. The design and developmental aspects of various high voltage power apparatus using SF6 and high vacuum are highlighted. This book is comprised of eight chapters and opens with a discussion on electrical discharges in SF6 and high vacuum, along with the properties and handling of SF6 gas. The following chapters fo

  9. Humidity effects on wire insulation breakdown strength.

    Energy Technology Data Exchange (ETDEWEB)

    Appelhans, Leah

    2013-08-01

    Methods for the testing of the dielectric breakdown strength of insulation on metal wires under variable humidity conditions were developed. Two methods, an ASTM method and the twisted pair method, were compared to determine if the twisted pair method could be used for determination of breakdown strength under variable humidity conditions. It was concluded that, although there were small differences in outcomes between the two testing methods, the non-standard method (twisted pair) would be appropriate to use for further testing of the effects of humidity on breakdown performance. The dielectric breakdown strength of 34G copper wire insulated with double layer Poly-Thermaleze/Polyamide-imide insulation was measured using the twisted pair method under a variety of relative humidity (RH) conditions and exposure times. Humidity at 50% RH and below was not found to affect the dielectric breakdown strength. At 80% RH the dielectric breakdown strength was significantly diminished. No effect for exposure time up to 140 hours was observed at 50 or 80%RH.

  10. Influence of the plasma on ICRF antenna voltage limits

    Science.gov (United States)

    Bobkov, V.; Noterdaeme, J.-M.; Wesner, F.; Wilhelm, R.; ASDEX Upgrade Team

    2003-03-01

    An ion cyclotron range of frequencies (ICRF) probe [F.W. Baity, G.C. Barber, V. Bobkov, R.H. Goulding, J.-M. Noterdaeme, D.W. Swain, in: 14th Topical Conference on Radiofrequency Power in Plasmas, Oxnard 2001, AIP Conference Proceedings 595, AIP, Melville, NY, 2001, p. 510] has been implemented to study voltage stand-off of the ICRF antennas on ASDEX Upgrade (AUG). The probe was operated at first in a test stand where features of high RF voltage operation in vacuum and plasma created by an ion source of the Hall type [Plasma Sources Sci. Technol. 8 (1999) R1] were studied. Vacuum arcs as well as ignition of high voltage glow discharge are candidate processes to explain voltage limits of the ICRF antennas. The setup on AUG was used to expose high RF voltages in real conditions of the tokamak scrape-off layer which are faced by the ICRF antennas. It is found that high voltage breakdown on the ICRF antenna is often correlated with ELM activity. The maximal RF voltage increased from shot to shot, i.e. the conditioning effect is observed. For the good-conditioned ICRF probe it was shown experimentally that the voltage limit can be increased while the rectified current is suppressed at the same time.

  11. The Dynamic Fracture Process in Rocks Under High-Voltage Pulse Fragmentation

    Science.gov (United States)

    Cho, Sang Ho; Cheong, Sang Sun; Yokota, Mitsuhiro; Kaneko, Katsuhiko

    2016-10-01

    High-voltage pulse technology has been applied to rock excavation, liberation of microfossils, drilling of rocks, oil and water stimulation, cleaning castings, and recycling products like concrete and electrical appliances. In the field of rock mechanics, research interest has focused on the use of high-voltage pulse technology for drilling and cutting rocks over the past several decades. In the use of high-voltage pulse technology for drilling and cutting rocks, it is important to understand the fragmentation mechanism in rocks subjected to high-voltage discharge pulses to improve the effectiveness of drilling and cutting technologies. The process of drilling rocks using high-voltage discharge is employed because it generates electrical breakdown inside the rocks between the anode and cathode. In this study, seven rock types and a cement paste were electrically fractured using high-voltage pulse discharge to investigate their dielectric breakdown properties. The dielectric breakdown strengths of the samples were compared with their physical and mechanical properties. The samples with dielectric fractured were scanned using a high-resolution X-ray computed tomography system to observe the fracture formation associated with mineral constituents. The fracture patterns of the rock samples were analyzed using numerical simulation for high-voltage pulse-induced fragmentation that adopts the surface traction and internal body force conditions.

  12. Sub-micron ZnO:N particles fabricated by low voltage electrical discharge lithography on Zn{sub 3}N{sub 2} sputtered films

    Energy Technology Data Exchange (ETDEWEB)

    Núñez, C. García, E-mail: carlos.garcia@uam.es [Dpt. de Física Aplicada, Laboratorio de Microelectrónica, Universidad Autónoma de Madrid, 28020 Madrid (Spain); Jiménez-Trillo, J. [Dpt. Ingeniería de Circuitos y Sistemas, EUIT Telecomunicación, Universidad Politécnica de Madrid, Campus Sur, 28031 Madrid (Spain); Vélez, M. García [Dpt. Tecnología Electrónica, Escuela Superior de C.C. Experimentales y Tecnología, Universidad Rey Juan Carlos, 28933 Madrid (Spain); Piqueras, J.; Pau, J.L. [Dpt. de Física Aplicada, Laboratorio de Microelectrónica, Universidad Autónoma de Madrid, 28020 Madrid (Spain); Coya, C.; Álvarez, A.L. [Dpt. Tecnología Electrónica, Escuela Superior de C.C. Experimentales y Tecnología, Universidad Rey Juan Carlos, 28933 Madrid (Spain)

    2013-11-15

    This work analyzes the morphological, compositional and electrical modification of zinc nitride (Zn{sub 3}N{sub 2}) films through arc discharges produced by biasing a metal tip at a micrometric distance of the surface. Polycrystalline nitride layers are prepared by radio-frequency magnetron sputtering from a pure Zn target on glass substrates using N{sub 2} as working gas. Film properties after arc discharges are investigated by using scanning electron microscopy (SEM), ion beam analysis (IBA) techniques and four-probe resistivity measurements. Electrical discharge lithography performed at low bias voltages reveals as an effective mechanism to reduce resistivity by electrical breakdown of the thin oxide layer formed on top of the nitride. At higher voltages, electrical discharges along the scan increase nitride resistivity due to the severe modification of the structural properties. Additionally, compositional analysis reveals that nitrogen leaves the structure being replaced by ambient oxygen. This characteristic behavior leads to the formation of facetted submicron ZnO crystals whose size depends on the original Zn{sub 3}N{sub 2} grain size and the probe voltage used. The excess of zinc forms self-assembled microstructures along the scan edge.

  13. STUDENT AWARD FINALIST: Study of Self-Absorbed Vacuum Ultraviolet Radiation during Pulsed Atmospheric Breakdown in Air

    Science.gov (United States)

    Laity, George; Fierro, Andrew; Hatfield, Lynn; Neuber, Andreas

    2011-10-01

    This paper describes recent experiments to investigate the role of self-produced vacuum ultraviolet (VUV) radiation in the physics of pulsed atmospheric breakdown. A unique apparatus was constructed which enables the detailed exploration of VUV light in the range 115-135 nm, which is emitted from breakdown between two point-point electrodes in an air environment at atmospheric pressure. Time-resolved diagnostics include VUV sensitive photomultipliers, intensified CCD imaging, optically isolated high voltage probes, and fast rise-time Rogowski current monitors. Temporally resolved spectroscopy from air breakdowns revealed VUV emission is released during the initial streamer phase before voltage collapse, with the majority of the emission lines identified from various atmospheric gases or surface impurities. Imaging of VUV radiation was performed which conserved the spatial emission profile, and distinct differences between nitrogen and oxygen VUV emission during onset of breakdown have been observed. Specifically, the self-absorption of HI, OI, and NI lines is addressed which elucidates the role of radiation transport during the photon-dominated streamer breakdown process. Supported by AFOSR, NASA / TSGC, DEPS, and IEEE DEIS.

  14. Time domain simulations of preliminary breakdown pulses in natural lightning

    Science.gov (United States)

    Carlson, B E; Liang, C; Bitzer, P; Christian, H

    2015-01-01

    Lightning discharge is a complicated process with relevant physical scales spanning many orders of magnitude. In an effort to understand the electrodynamics of lightning and connect physical properties of the channel to observed behavior, we construct a simulation of charge and current flow on a narrow conducting channel embedded in three-dimensional space with the time domain electric field integral equation, the method of moments, and the thin-wire approximation. The method includes approximate treatment of resistance evolution due to lightning channel heating and the corona sheath of charge surrounding the lightning channel. Focusing our attention on preliminary breakdown in natural lightning by simulating stepwise channel extension with a simplified geometry, our simulation reproduces the broad features observed in data collected with the Huntsville Alabama Marx Meter Array. Some deviations in pulse shape details are evident, suggesting future work focusing on the detailed properties of the stepping mechanism. Key Points Preliminary breakdown pulses can be reproduced by simulated channel extension Channel heating and corona sheath formation are crucial to proper pulse shape Extension processes and channel orientation significantly affect observations PMID:26664815

  15. Time domain simulations of preliminary breakdown pulses in natural lightning.

    Science.gov (United States)

    Carlson, B E; Liang, C; Bitzer, P; Christian, H

    2015-06-16

    Lightning discharge is a complicated process with relevant physical scales spanning many orders of magnitude. In an effort to understand the electrodynamics of lightning and connect physical properties of the channel to observed behavior, we construct a simulation of charge and current flow on a narrow conducting channel embedded in three-dimensional space with the time domain electric field integral equation, the method of moments, and the thin-wire approximation. The method includes approximate treatment of resistance evolution due to lightning channel heating and the corona sheath of charge surrounding the lightning channel. Focusing our attention on preliminary breakdown in natural lightning by simulating stepwise channel extension with a simplified geometry, our simulation reproduces the broad features observed in data collected with the Huntsville Alabama Marx Meter Array. Some deviations in pulse shape details are evident, suggesting future work focusing on the detailed properties of the stepping mechanism. Preliminary breakdown pulses can be reproduced by simulated channel extension Channel heating and corona sheath formation are crucial to proper pulse shape Extension processes and channel orientation significantly affect observations.

  16. Voltage- and current-activated metal–insulator transition in VO2-based electrical switches: a lifetime operation analysis

    Directory of Open Access Journals (Sweden)

    Aurelian Crunteanu, Julien Givernaud, Jonathan Leroy, David Mardivirin, Corinne Champeaux, Jean-Christophe Orlianges, Alain Catherinot and Pierre Blondy

    2010-01-01

    Full Text Available Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal–insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal–insulator transition in VO2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO2-based switching (more than 260 million cycles without failure compared with the voltage-activated mode (breakdown at around 16 million activation cycles. The evolution of the electrical self-oscillations of a VO2-based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

  17. A computational study of the topology of vortex breakdown

    Science.gov (United States)

    Spall, Robert E.; Gatski, Thomas B.

    1991-01-01

    A fully three-dimensional numerical simulation of vortex breakdown using the unsteady, incompressible Navier-Stokes equations has been performed. Solutions to four distinct types of breakdown are identified and compared with experimental results. The computed solutions include weak helical, double helix, spiral, and bubble-type breakdowns. The topological structure of the various breakdowns as well as their interrelationship are studied. The data reveal that the asymmetric modes of breakdown may be subject to additional breakdowns as the vortex core evolves in the streamwise direction. The solutions also show that the freestream axial velocity distribution has a significant effect on the position and type of vortex breakdown.

  18. Effect of voltage shape of electrical power supply on radiation and density of a cold atmospheric argon plasma jet

    OpenAIRE

    F. Sohbatzadeh; Bagheri, M; S. Motallebi

    2017-01-01

    In this work, we investigated generating argon cold plasma jet at atmospheric pressure based on dielectric barrier discharge configuration using three electrical power supplies of sinusoidal, pulsed and saw tooth high voltage shapes at 8 KHZ. At first; we describe the electronic circuit features for generating high voltage (HV) wave forms including saw tooth, sinusoidal and pulsed forms. Then, we consider the effect of voltage shape on the electrical breakdown. Relative concentrations of chem...

  19. Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

    Science.gov (United States)

    Vizkelethy, G.; King, M. P.; Aktas, O.; Kizilyalli, I. C.; Kaplar, R. J.

    2017-08-01

    Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories' nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. The displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.

  20. Time domain simulations of preliminary breakdown pulses in natural lightning

    CERN Document Server

    Carlson, B E; Bitzer, P; Christian, H

    2016-01-01

    Lightning discharge is a complicated process with relevant physical scales spanning many orders of magnitude. In an effort to understand the electrodynamics of lightning and connect physical properties of the channel to observed behavior, we construct a simulation of charge and current flow on a narrow conducting channel embedded in three-dimensional space with the time domain electric field integral equation, the method of moments, and the thin-wire approximation. The method includes approximate treatment of resistance evolution due to lightning channel heating and the corona sheath of charge surrounding the lightning channel. Focusing our attention on preliminary breakdown in natural lightning by simulating stepwise channel extension with a simplified geometry, our simulation reproduces the broad features observed in data collected with the Huntsville Alabama Marx Meter Array. Some deviations in pulse shape details are evident, suggesting future work focusing on the detailed properties of the stepping mecha...

  1. Note: Complementary metal-oxide-semiconductor high voltage pulse generation circuits.

    Science.gov (United States)

    Sun, Jiwei; Wang, Pingshan

    2013-10-01

    We present two types of on-chip pulse generation circuits. The first is based on CMOS pulse-forming-lines (PFLs). It includes a four-stage charge pump, a four-stacked-MOSFET switch and a 5 mm long PFL. The circuit is implemented in a 0.13 μm CMOS process. Pulses of ~1.8 V amplitude with ~135 ps duration on a 50 Ω load are obtained. The obtained voltage is higher than 1.6 V, the rated operating voltage of the process. The second is a high-voltage Marx generator which also uses stacked MOSFETs as high voltage switches. The output voltage is 11.68 V, which is higher than the highest breakdown voltage (~10 V) of the CMOS process. These results significantly extend high-voltage pulse generation capabilities of CMOS technologies.

  2. Effects of void size and gas content on electrical breakdown in lightweight, mechanically compliant, void-filled dielectrics

    Science.gov (United States)

    Anderson, R. A.; Lagasse, R. R.; Russick, E. M.; Schroeder, J. L.

    2002-03-01

    Dielectric potting materials (encapsulants) are used to prevent air breakdown in high-voltage electrical devices. We report breakdown strengths in void-filled encapsulants, stressed with unipolar voltage pulses of the order of 10 μs duration. High strengths, on the order of 100 kV mm-1, are measured under these test conditions. The materials studied include low-density open celled gel-derived foams with cell sizes of 4 μm or less, closed celled CO2-blown polystyrene and urethane foams, and epoxies containing 48 vol % of hollow glass microballoon (GMB) fillers. These last specimens varied the void gas (N2 or SO2) and also the void diameters (tens to hundreds of μm). Our measurements are thought to be directly sensitive to the rate of field-induced ionization events in the void gas; however, the breakdown strengths of the materials tested appeared to vary in direct proportion with the conventional Paschen-law gas-discharge inception threshold, the electric stress at which gas-ionization avalanches become possible. The GMB-epoxy specimens displayed this type of dependence of breakdown strength on the void-gas density and void size, but the measurements were an order of magnitude above the conventional predictions. Small-celled foams also showed increased breakdown strengths with decreased cell size, although their irregular void geometry prevented a direct comparison with the more uniformly structured microballoon-filled encapsulants. The experimental observations are consistent with a breakdown mechanism in which the discharge of a few voids can launch a full breakdown in the composite material.

  3. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    Directory of Open Access Journals (Sweden)

    Masaharu Kobayashi

    2016-02-01

    Full Text Available Internet-of-Things (IoT technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT.

  4. On device design for steep-slope negative-capacitance field-effect-transistor operating at sub-0.2V supply voltage with ferroelectric HfO2 thin film

    Science.gov (United States)

    Kobayashi, Masaharu; Hiramoto, Toshiro

    2016-02-01

    Internet-of-Things (IoT) technologies require a new energy-efficient transistor which operates at ultralow voltage and ultralow power for sensor node devices employing energy-harvesting techniques as power supply. In this paper, a practical device design guideline for low voltage operation of steep-slope negative-capacitance field-effect-transistors (NCFETs) operating at sub-0.2V supply voltage is investigated regarding operation speed, material requirement and energy efficiency in the case of ferroelectric HfO2 gate insulator, which is the material fully compatible to Complementary Metal-Oxide-Semiconductor (CMOS) process technologies. A physics-based numerical simulator was built to design NCFETs with the use of experimental HfO2 material parameters by modeling the ferroelectric gate insulator and FET channel simultaneously. The simulator revealed that NCFETs with ferroelectric HfO2 gate insulator enable hysteresis-free operation by setting appropriate operation point with a few nm thick gate insulator. It also revealed that, if the finite response time of spontaneous polarization of the ferroelectric gate insulator is 10-100psec, 1-10MHz operation speed can be achieved with negligible hysteresis. Finally, by optimizing material parameters and tuning negative capacitance, 2.5 times higher energy efficiency can be achieved by NCFET than by conventional MOSFETs. Thus, NCFET is expected to be a new CMOS technology platform for ultralow power IoT.

  5. Solution-processed and low-temperature metal oxide n-channel thin-film transistors and low-voltage complementary circuitry on large-area flexible polyimide foil

    NARCIS (Netherlands)

    Rockelé, M.; Pham, D.V.; Steiger, J.; Botnaras, S.; Weber, D.; Vanfleteren, J.; Sterken, T.; Cuypers, D.; Steudel, S.; Myny, K.; Schols, S.; Putten, J.B.P.H. van der; Genoe, J.; Heremans, P.

    2012-01-01

    High-performance solution-based n-type metal oxide thin-film transistors (TFTs), fabricated directly on polyimide foil at a post-annealing temperature of only 250''C, are realized and reported. Saturation mobilities exceeding 2cmV(Vs) and on-to-off current ratios up to 10^ are achieved. The usage of

  6. Stray voltage mitigation

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

    2008-04-09

    This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

  7. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  8. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  9. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    OpenAIRE

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar; Cecati, Carlo

    2013-01-01

    Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbala...

  10. Analysis Code for High Gradient Dielectric Insulator Surface Breakdown

    Energy Technology Data Exchange (ETDEWEB)

    Ives, Robert Lawrence [Calabazas Creek Research, Inc.; Verboncoeur, John [University of California - Berkeley; Aldan, Manuel [University of California, Berkeley

    2010-05-30

    High voltage (HV) insulators are critical components in high-energy, accelerator and pulsed power systems that drive diverse applications in the national security, nuclear weapons science, defense and industrial arenas. In these systems, the insulator may separate vacuum/non-vacuum regions or conductors with high electrical field gradients. These insulators will often fail at electric fields over an order of magnitude lower than their intrinsic dielectric strength due to flashover at the dielectric interface. Decades of studies have produced a wealth of information on fundamental processes and mechanisms important for flashover initiation, but only for relatively simple insulator configurations in controlled environments. Accelerator and pulsed power system designers are faced with applying the fundamental knowledge to complex, operational devices with escalating HV requirements. Designers are forced to rely on “best practices” and expensive prototype testing, providing boundaries for successful operation. However, the safety margin is difficult to estimate, and system design must be very conservative for situations where testing is not practicable, or replacement of failed parts is disruptive or expensive. The Phase I program demonstrated the feasibility of developing an advanced code for modeling insulator breakdown. Such a code would be of great interest for a number of applications, including high energy physics, microwave source development, fusion sciences, and other research and industrial applications using high voltage devices.

  11. Heating process in the pre-Breakdown regime of the Quantum Hall Efect : a size dependent effect

    OpenAIRE

    Meziani, Y. M.; Chaubet, C.; Jouault, B; Bonifacie, S.; Raymond, A; Poirier, W; Piquemal, F.

    2003-01-01

    Our study presents experimental measurements of the contact and longitudinal voltage drops in Hall bars, as a function of the current amplitude. We are interested in the heating phenomenon which takes place before the breakdown of the quantum Hall effect, i.e. the pre-breakdown regime. Two types of samples has been investigated, at low temperature (4.2 and 1.5K) and high magnetic field (up to 13 T). The Hall bars have several different widths, and our observations clearly demonstrate that the...

  12. Reverse breakdown in long wavelength lateral collection Cd sub x Hg sub 1 sub minus x Te diodes

    Energy Technology Data Exchange (ETDEWEB)

    Elliott, C.T.; Gordon, N.T.; Hall, R.S. (Royal Signals, Malvern, Worcs WR14 3PS, (England) Radar Establishment, Malvern, Worcs WR14 3PS, England (GB)); Crimes, G. (Philips Components, Southampton, Hants S09 7BH, (England))

    1990-03-01

    Long wavelength diodes in Cd{sub {ital x}}Hg{sub 1{minus}{ital x}}Te show large deviations from ideality in their reverse characteristics. The excess currents are attributed in many published papers on band to band tunneling at high reverse bias and to trap assisted tunneling at low reverse bias. Measurements of photocurrent multiplication, current--voltage characteristics, and noise have been made on long wavelength loophole diodes to determine the breakdown mechanism. This has produced strong evidence that the reverse characteristics of good quality diodes of this type are limited by impact ionization. At higher biases, there is evidence of an additional breakdown mechanism, probably tunneling.

  13. Thickness-dependent dielectric breakdown and nanopore creation on sub-10-nm-thick SiN membranes in solution

    Science.gov (United States)

    Yanagi, Itaru; Fujisaki, Koji; Hamamura, Hirotaka; Takeda, Ken-ichi

    2017-01-01

    Recently, dielectric breakdown of solid-state membranes in solution has come to be known as a powerful method for fabricating nanopore sensors. This method has enabled a stable fabrication of nanopores down to sub-2 nm in diameter, which can be used to detect the sizes and structures of small molecules. Until now, the behavior of dielectric breakdown for nanopore creation in SiN membranes with thicknesses of less than 10 nm has not been studied, while the thinner nanopore membranes are preferable for nanopore sensors in terms of spatial resolution. In the present study, the thickness dependence of the dielectric breakdown of sub-10-nm-thick SiN membranes in solution was investigated using gradually increased voltage pulses. The increment in leakage current through the membrane at the breakdown was found to become smaller with a decrease in the thickness of the membrane, which resulted in the creation of smaller nanopores. In addition, the electric field for dielectric breakdown drastically decreased when the thickness of the membrane was less than 5 nm. These breakdown behaviors are quite similar to those observed in gate insulators of metal-oxide-semiconductor devices. Finally, stable ionic-current blockades were observed when single-stranded DNA passed through the nanopores created on the membranes with thicknesses of 3-7 nm.

  14. Genetic Algorithm-Based Artificial Neural Network for Voltage Stability Assessment

    OpenAIRE

    Garima Singh; Laxmi Srivastava

    2011-01-01

    With the emerging trend of restructuring in the electric power industry, many transmission lines have been forced to operate at almost their full capacities worldwide. Due to this, more incidents of voltage instability and collapse are being observed throughout the world leading to major system breakdowns. To avoid these undesirable incidents, a fast and accurate estimation of voltage stability margin is required. In this paper, genetic algorithm based back propagation neural network (GABPNN...

  15. Choice of operating voltage for a transmission electron microscope

    Energy Technology Data Exchange (ETDEWEB)

    Egerton, R.F., E-mail: regerton@ualberta.ca

    2014-10-15

    An accelerating voltage of 100–300 kV remains a good choice for the majority of TEM or STEM specimens, avoiding the expense of high-voltage microscopy but providing the possibility of atomic resolution even in the absence of lens-aberration correction. For specimens thicker than a few tens of nm, the image intensity and scattering contrast are likely to be higher than at lower voltage, as is the visibility of ionization edges below 1000 eV (as required for EELS elemental analysis). In thick (>100 nm) specimens, higher voltage ensures less beam broadening and better spatial resolution for STEM imaging and EDX spectroscopy. Low-voltage (e.g. 30 kV) TEM or STEM is attractive for a very thin (e.g. 10 nm) specimen, as it provides higher scattering contrast and fewer problems for valence-excitation EELS. Specimens that are immune to radiolysis suffer knock-on damage at high current densities, and this form of radiation damage can be reduced or avoided by choosing a low accelerating voltage. Low-voltage STEM with an aberration-corrected objective lens (together with a high-angle dark-field detector and/or EELS) offers atomic resolution and elemental identification from very thin specimens. Conventional TEM can provide atomic resolution in low-voltage phase-contrast images but requires correction of chromatic aberration and preferably an electron-beam monochromator. Many non-conducting (e.g. organic) specimens damage easily by radiolysis and radiation damage then determines the TEM image resolution. For bright-field scattering contrast, low kV can provide slightly better dose-limited resolution if the specimen is very thin (a few nm) but considerably better resolution is possible from a thicker specimen, for which higher kV is required. Use of a phase plate in a conventional TEM offers the most dose-efficient way of achieving atomic resolution from beam-sensitive specimens. - Highlights: • 100–300 kV accelerating voltage is suitable for TEM specimens of typical

  16. Scanning transmission electron microscopy imaging dynamics at low accelerating voltages

    Energy Technology Data Exchange (ETDEWEB)

    Lugg, N.R. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Findlay, S.D. [Institute of Engineering Innovation, The University of Tokyo, Tokyo 116-0013 (Japan); Shibata, N. [Institute of Engineering Innovation, The University of Tokyo, Tokyo 116-0013 (Japan); PRESTO, Japan Science and Technology Agency, Saitama 332-0012 (Japan); Mizoguchi, T. [Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505 (Japan); D' Alfonso, A.J. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Allen, L.J., E-mail: lja@unimelb.edu.au [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Ikuhara, Y. [Institute of Engineering Innovation, The University of Tokyo, Tokyo 116-0013 (Japan); Nanostructures Research Laboratory, Japan Fine Ceramic Center, Nagoya 456-8587 (Japan); WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

    2011-07-15

    Motivated by the desire to minimize specimen damage in beam sensitive specimens, there has been a recent push toward using relatively low accelerating voltages (<100kV) in scanning transmission electron microscopy. To complement experimental efforts on this front, this paper seeks to explore the variations with accelerating voltage of the imaging dynamics, both of the channelling of the fast electron and of the inelastic interactions. High-angle annular-dark field, electron energy loss spectroscopic imaging and annular bright field imaging are all considered. -- Highlights: {yields} Both elastic and inelastic scattering in STEM are acceleration voltage dependent. {yields} HAADF, EELS and ABF imaging are assessed with a view to optimum imaging. {yields} Lower accelerating voltages improve STEM EELS contrast in very thin crystals. {yields} Higher accelerating voltages give better STEM EELS contrast in thicker crystals. {yields} At fixed resolution, higher accelerating voltage aids ABF imaging of light elements.

  17. Instrumental Developments for In-situ Breakdown Experiments inside a Scanning Electron Microscope

    CERN Document Server

    Muranaka, T; Leifer, K; Ziemann, V

    2011-01-01

    Electrical discharges in accelerating structures are one of the key issues limiting the performance of future high energy accelerators such as the Compact Linear Collider (CLIC). Fundamental understanding of breakdown phenomena is an indispensable part of the CLIC feasibility study. The present work concerns the experimental study of breakdown using Scanning Electron Microscopes (SEMs). A SEM gives us the opportunity to achieve high electrical gradients of 1\\,kV/$\\mu$m which corresponds to 1\\,GV/m by exciting a probe needle with a high voltage power supply and controlling the positioning of the needle with a linear piezo motor. The gap between the needle tip and the surface is controlled with sub-micron precision. A second electron microscope equipped with a Focused Ion Beam (FIB) is used to create surface corrugations and to sharpen the probe needle to a tip radius of about 50\\,nm. Moreover it is used to prepare cross sections of a voltage breakdown area in order to study the geometrical surface damages as w...

  18. A compact, all solid-state LC high voltage generator.

    Science.gov (United States)

    Fan, Xuliang; Liu, Jinliang

    2013-06-01

    LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

  19. Voltage verification unit

    Science.gov (United States)

    Martin, Edward J.

    2008-01-15

    A voltage verification unit and method for determining the absence of potentially dangerous potentials within a power supply enclosure without Mode 2 work is disclosed. With this device and method, a qualified worker, following a relatively simple protocol that involves a function test (hot, cold, hot) of the voltage verification unit before Lock Out/Tag Out and, and once the Lock Out/Tag Out is completed, testing or "trying" by simply reading a display on the voltage verification unit can be accomplished without exposure of the operator to the interior of the voltage supply enclosure. According to a preferred embodiment, the voltage verification unit includes test leads to allow diagnostics with other meters, without the necessity of accessing potentially dangerous bus bars or the like.

  20. An Ultra-Compact Marx-Type High-Voltage Generator

    Energy Technology Data Exchange (ETDEWEB)

    Goerz, D; Ferriera, T; Nelson, D; Speer, R; Wilson, M

    2001-06-15

    This paper discusses the design of an ultra-compact, Marx-type, high-voltage generator. This system incorporates high-performance components that are closely coupled and integrated into an extremely compact assembly. Low profile, custom ceramic capacitors with coplanar extended electrodes provide primary energy storage. Low-inductance, spark-gap switches incorporate miniature gas cavities imbedded within the central region of the annular shaped capacitors, with very thin dielectric sections separating the energy storage capacitors. Carefully shaped electrodes and insulator surfaces are used throughout to minimize field enhancements, reduce fields at triple-point regions, and enable operation at stress levels closer to the intrinsic breakdown limits of the dielectric materials. Specially shaped resistors and inductors are used for charging and isolation during operation. Forward-coupling ceramic capacitors are connected across successive switch-capacitor-switch stages to assist in switching. Pressurized SF, gas is used for electrical insulation in the spark-gap switches and throughout the unit. The pressure housing is constructed entirely of dielectric materials, with segments that interlock with the low-profile switch bodies to provide an integrated support structure for all of the components. This ultra-compact Marx generator employs a modular design that can be sized as needed for a particular application. Units have been assembled with 4, 10, and 30 stages and operated at levels up to 100 kV per stage.

  1. Electrical breakdown phenomena of dielectric elastomers

    DEFF Research Database (Denmark)

    Yu, Liyun; Mateiu, Ramona Valentina; Skov, Anne Ladegaard

    years. However, optimization with respect to the dielectric permittivity solely may lead to other problematic phenomena such as premature electrical breakdown. In this work, we focus on the chloro propyl functionalized silicone elastomers prepared in Madsen et al[2] and we investigate the electrical...... breakdown patterns of two similar chloro propyl functionalized silicone elastomers which break down electrically in a rather different way as well as we compare them to a silicone based reference. Thermogravimetric analysis (TGA) and scanning electron microscopy (SEM) are used to evaluate the elastomers...... before and after electrical breakdown. It was shown the chemically very similar silicone elastomers broke down electrically in very different ways. These observations emphasize that the modification of the silicone backbone may open up for completely new possibilities for stabilizing the silicone...

  2. Impact of Machine Breakdowns on Productivity

    Directory of Open Access Journals (Sweden)

    Anwaruddin Tanwari

    2011-10-01

    Full Text Available This paper reports the machine breakdowns and their impact on the total productivity for the FMCGs (Fast Moving Consumer Goods industry because higher productivity rate is important factor on which the customer services largely depend in this competitive business world. This paper also suggests that the machine breakdowns and other related problems within the plant are due to improper care, keeping the plant operative for twenty four hours a day, seven days a week without any break and lack of management\\'s concentration towards these issues. These break-downs results in un-timely closure of the plant and very poor production performance is achieved in the plant that affects the service level at great level. Realising the importance of maintenance in improving productivity and service, an attempt has been made in this paper to study the scope of maintenance with the help of a case study.

  3. Spectrometers for RF breakdown studies for CLIC

    Science.gov (United States)

    Jacewicz, M.; Ziemann, V.; Ekelöf, T.; Dubrovskiy, A.; Ruber, R.

    2016-08-01

    An e+e- collider of several TeV energy will be needed for the precision studies of any new physics discovered at the LHC collider at CERN. One promising candidate is CLIC, a linear collider which is based on a two-beam acceleration scheme that efficiently solves the problem of power distribution to the acceleration structures. The phenomenon that currently prevents achieving high accelerating gradients in high energy accelerators such as the CLIC is the electrical breakdown at very high electrical field. The ongoing experimental work within the CLIC collaboration is trying to benchmark the theoretical models focusing on the physics of vacuum breakdown which is responsible for the discharges. In order to validate the feasibility of accelerating structures and observe the characteristics of the vacuum discharges and their eroding effects on the structure two dedicated spectrometers are now commissioned at the high-power test-stands at CERN. First, the so called Flashbox has opened up a possibility for non-invasive studies of the emitted breakdown currents during two-beam acceleration experiments. It gives a unique possibility to measure the energy of electrons and ions in combination with the arrival time spectra and to put that in context with accelerated beam, which is not possible at any of the other existing test-stands. The second instrument, a spectrometer for detection of the dark and breakdown currents, is operated at one of the 12 GHz stand-alone test-stands at CERN. Built for high repetition rate operation it can measure the spatial and energy distributions of the electrons emitted from the acceleration structure during a single RF pulse. Two new analysis tools: discharge impedance tracking and tomographic image reconstruction, applied to the data from the spectrometer make possible for the first time to obtain the location of the breakdown inside the structure both in the transversal and longitudinal direction thus giving a more complete picture of the

  4. Modeling the breakdown and glow phases during ignition of HID lamps

    Energy Technology Data Exchange (ETDEWEB)

    Liland, K.B.; Peres, I.; Pitchford, L.C.; Boeuf, J.P. [Univ. Paul Sabatier, Toulouse (France)

    1996-12-31

    HID lamps are often ignited by one or more short, high voltage pulses (trigger pulses) superimposed on the low frequency, generator voltage. The authors have developed a self-consistent, fluid model of transient glow discharges to study the breakdown and glow phases in HID lamps from the time of the application of the trigger pulse(s) to the time when there is a fully-developed, quasi-steady state glow discharge. The transition to the thermionic arc is not considered here. Using this model they have investigated the influence of the height, width and number of trigger pulses on the generator voltage required to achieve a steady-state glow discharge. The model used is one-dimensional, and the fundamental variables are the charged particle densities and the potential as functions of distance between the electrodes and time. The minimum voltage needed to initiate a glow discharge, V{sub g}, decreases with increasing current during the trigger pulse and reaches a minimum which is a few volts above the steady-state glow voltage. Results in discharges in argon and argon/mercury mixtures will be presented showing the dependence of V{sub g} on the trigger pulse and on other discharge conditions (gas mixture, external circuit, ...). The calculated, steady-state glow current-voltage characteristic will also be presented.

  5. The Resistance of Breakdown in Transformer Oil

    Directory of Open Access Journals (Sweden)

    Jozef Kudelcik

    2008-01-01

    Full Text Available The conditions under which breakdown of composite liquid - solid insulation can be occurred, e.g., in transformer,play an important role in designing of such insulation. The initial state of breakdown development is explained on the basisof bubble theory and formation of a plasma channel between the electrodes. The electrical resistance of plasma channel iscalculated using several theories and its changes from a few ohms to a few hundred milliohms due to Joule heating caused byhigh arc current which flows through the plasma. The dynamics of the arc current depends on the parameters of outer circuitand is represented by RLC circuit.

  6. Water permeation and dielectric breakdown. Water permeability in Pub Tedlar. Pub/Tedlar as a function of temperature and humidity

    Science.gov (United States)

    Orehotsky, J.

    1985-06-01

    Moisture transport and dielectric breakdown of polyvinyl butyral (PVB), Tedlar, and PVB/Tedlar composites were addressed. Data for the temperature range between 20 and 80 C showed that the moisture flux through the composite is governed by the slower material; and that the composite permeability is intermediate to those of the component material, as predicted by theory. Data for Tedlar at 71 C, showing the dependence of moisture flux on relative humidity, was also presented. Dielectric breakdown data were less precise and less conclusive. The generally applied theoretical model does not match the experimental data. The PVB/Tedlar composite exhibited greater voltage breakdown resistance than either component. Testing of EVA and EVA/Tedlar composites is underway.

  7. Preparation and Arc Breakdown Behavior of Nanocrystalline W-Cu Electrical Contact Materials

    Institute of Scientific and Technical Information of China (English)

    Wenge CHEN; Zhanying KANG; Bingjun DING

    2005-01-01

    Nanostructured (NS) W-Cu composite powder was prepared by mechanical alloying (MA), and nanostructured bulk of W-Cu contact material was fabricated by hot pressed sintering in an electrical vacuum furnace. The microstructure,electric conductivity, hardness, breakdown voltage and arcing time of NS W-Cu alloys were measured and compared to conventional W-Cu alloys prepared by powder metallurgy. The results show that microstructural refinement and uniformity can improve the breakdown behavior, the electric arc stability and the arc extinction ability of nanostructured W-Cu contacts materials. Also, the nanostructured W-Cu contact material shows the characteristic of spreading electric arcs, which is of benefit to electric arc erosion.

  8. Impact of gas flow rate on breakdown of filamentary dielectric barrier discharges

    Science.gov (United States)

    Höft, H.; Becker, M. M.; Kettlitz, M.

    2016-03-01

    The influence of gas flow rate on breakdown properties and stability of pulsed dielectric barrier discharges (DBDs) in a single filament arrangement using a gas mixture of 0.1 vol. % O2 in N2 at atmospheric pressure was investigated by means of electrical and optical diagnostics, accompanied by fluid dynamics and electrostatics simulations. A higher flow rate perpendicular to the electrode symmetry axis resulted in an increased breakdown voltage and DBD current maximum, a higher discharge inception jitter, and a larger emission diameter of the discharge channel. In addition, a shift of the filament position for low gas flow rates with respect to the electrode symmetry axis was observed. These effects can be explained by the change of the residence time of charge carriers in the discharge region—i.e., the volume pre-ionization—for changed flow conditions due to the convective transport of particles out of the center of the gap.

  9. The Influence of the Magnetic Field on the Electrical Breakdown Phenomena

    Institute of Scientific and Technical Information of China (English)

    M.RADMILOVI(C)-RADJENOVI(C); B.RADJNOVI(C)

    2007-01-01

    A simple phenomenological model and detailed simulation studies of the breakdown phenomena in argon and nitrogen under the simultaneous action of electric and magnetic fields are presented in this paper. Expressions for the breakdown voltage have been derived taking into account variations of both the ionization coefficient and the secondary electron yield in a magnetic field. Calculations were performed by using XOOPIC code, an Object Oriented Particle in Cell code, with both the original and the improved secondary emission model with inclusion of the influence of the magnetic field on the secondary electron production. The simulation results presented here clearly show that the inclusion of the dependence of the secondary electron yield on the magnetic field leads to better agreement with existing experimental results.

  10. Study of electrical breakdown and secondary pull-in failure modes for NEM relays

    Science.gov (United States)

    Ramezani, M.; Severi, S.; Tilmans, H. A. C.; De Meyer, K.

    2017-01-01

    In this work, two common failure modes of nano-electro-mechanical (NEM) relays: (1) electrical breakdown and (2) stiction due to secondary pull-in were analyzed. These effects are dominant when dimensions of the device are scaled to the sub-micrometer scale. Like MEMS devices, design adjustments, such as introduction of dimples, cannot provide a solution. The geometrical parameters and working environment drive directly the occurrence of these failure modes. The beam length is the key parameter in driving the electrical breakdown while the distance of the gate to the drain, the beam thickness, and the actuation gap set the limits for secondary pull-in voltage. The analysis shows that these failure modes could be mitigated and a physical parameters design space could be identified to achieve NEM devices for high speed operation.

  11. Performance evaluation of self-breakdown-based single-gap plasma cathode electron gun

    Indian Academy of Sciences (India)

    Niraj Kumar; Nalini Pareek; Udit Narayan Pal; Deepak Kumar Verma; Jitendra Prajapati; Mahesh Kumar; Bharat Lal Meena; Ram Prakash

    2014-06-01

    This paper presents the experimental studies on self-breakdown-based single-gap plasma cathode electron (PCE) gun (5–20 kV/50–160 A) in argon, gas atmosphere and its performance evaluation based on particle-in-cell (PIC) simulation code `OOPIC-Pro’.The PCE-Gun works in conducting phase (low energy, high current) of pseudospark discharge. It produces an intense electron beam, which can propagate more than 200 mm in the drift space region without external magnetic field. The profile of this beam in the drift space region at different breakdown conditions (i.e., gas pressures and applied voltages) has been studied and the experimental results are compared with simulated values. It is demonstrated that ∼30% beam current is lost during the propagation possibly due to space charge neutralization and collisions with neutral particles and walls.

  12. Applying the Different Statistical Tests in Analysis of Electrical Breakdown Mechanisms in Nitrogen Filled Gas Diode

    Science.gov (United States)

    Čedomir, A. Maluckov; Saša, A. Rančev; Miodrag, K. Radović

    2016-10-01

    This paper presents the results of our investigations of breakdown mechanisms, as well as a description of their influence on the distributions of time delay distributions, for a gas tube filled with nitrogen at 4 mbar. The values of the time delay are measured for different voltages, and the values of the relaxation times and their distributions and probability plots are analyzed. The obtained density distributions have Gaussian distributions and exponential distributions for different values of relaxation times (Gaussian for small values and exponential for large values of relaxation time). It is shown that for middle values of relaxation time the delay distributions have a shape between Gaussian and exponential distributions, which is a result of the different influences of electrical breakdown.

  13. Strongly nonlinear dynamics of electrolytes in large ac voltages

    DEFF Research Database (Denmark)

    Olesen, Laurits Højgaard; Bazant, Martin Z.; Bruus, Henrik

    2010-01-01

    We study the response of a model microelectrochemical cell to a large ac voltage of frequency comparable to the inverse cell relaxation time. To bring out the basic physics, we consider the simplest possible model of a symmetric binary electrolyte confined between parallel-plate blocking electrodes...... in the electrolyte near the electrodes and, at very large voltage, the breakdown of the quasiequilibrium structure of the double layers. The former leads to the prediction of “ac capacitive desalination” since there is a time-averaged transfer of salt from the bulk to the double layers, via oscillating diffusion...... nonlinear responses to large ac voltages, such as Faradaic reactions, electro-osmotic instabilities, and induced-charge electrokinetic phenomena....

  14. Synthesis Mechanism of Low-Voltage Praseodymium Oxide Doped Zinc Oxide Varistor Ceramics Prepared Through Modified Citrate Gel Coating

    Directory of Open Access Journals (Sweden)

    Wan Rafizah Wan Abdullah

    2012-04-01

    Full Text Available High demands on low-voltage electronics have increased the need for zinc oxide (ZnO varistors with fast response, highly non-linear current-voltage characteristics and energy absorption capabilities at low breakdown voltage. However, trade-off between breakdown voltage and grain size poses a critical bottle-neck in the production of low-voltage varistors. The present study highlights the synthesis mechanism for obtaining praseodymium oxide (Pr6O11 based ZnO varistor ceramics having breakdown voltages of 2.8 to 13.3 V/mm through employment of direct modified citrate gel coating technique. Precursor powder and its ceramics were examined by means of TG/DTG, FTIR, XRD and FESEM analyses. The electrical properties as a function of Pr6O11 addition were analyzed on the basis of I-V characteristic measurement. The breakdown voltage could be adjusted from 0.01 to 0.06 V per grain boundary by controlling the amount of Pr6O11 from 0.2 to 0.8 mol%, without alteration of the grain size. The non-linearity coefficient, α, varied from 3.0 to 3.5 and the barrier height ranged from 0.56 to 0.64 eV. Breakdown voltage and α lowering with increasing Pr6O11 content were associated to reduction in the barrier height caused by variation in O vacancies at grain boundary.

  15. Experimental Results of Thin-Film Photovoltaic Cells in a Low Density LEO Plasma Environment: Ground Tests

    Science.gov (United States)

    Galofaro, Joel T.; Vayner, Boris V.

    2006-01-01

    Plasma ground testing results, conducted at the Glenn Research Center (GRC) National Plasma Interaction (N-PI) Facility, are presented for a number of thin-film photovoltaic cells. The cells represent a mix of promising new technologies identified by the Air Force Research Laboratory (AFRL) under the CYGNUS Space Science Technology Experiment (SSTE-4) Program. The current ground tests are aimed at characterizing the performance and survivability of thin film technologies in the harsh low earth orbital space environment where they will be flown. Measurements of parasitic current loss, charging/dielectric breakdown of cover-slide coatings and arcing threshold tests are performed for each individual cell. These measurements are followed by a series of experiments designed to test for catastrophic arc failure mechanisms. A special type of power supply, called a solar array simulator (SAS) with adjustable voltage and current limits on the supply s output, is employed to bias two adjacent cells at a predetermined voltage and current. The bias voltage is incrementally ramped up until a sustained arc results. Sustained arcs are precursors to catastrophic arc failure where the arc current rises to a maximum value for long timescales often ranging between 30 to 100 sec times. Normal arcs by comparison, are short lived events with a timescale between 10 to 30 sec. Sustained arcs lead to pyrolization with extreme cell damage and have been shown to cause the loss of entire array strings in solar arrays. The collected data will be used to evaluate the suitability of thin-film photovoltaic technologies for future space operations.

  16. Analysis of breakdown on thermal and electrical measurements for SPIDER accelerating grids

    Energy Technology Data Exchange (ETDEWEB)

    Pesce, Alberto, E-mail: alberto.pesce@igi.cnr.it [Consorzio RFX - Associazione EURATOM-ENEA per la fusione, Corso Stati Uniti 4, 35127 Padova (Italy); Pomaro, Nicola [Consorzio RFX - Associazione EURATOM-ENEA per la fusione, Corso Stati Uniti 4, 35127 Padova (Italy)

    2011-10-15

    The PRIMA test facility, under realization in Padova, includes a full size plasma source prototype for ITER, called SPIDER (Source for the Production of Ions of Deuterium Extracted from Radio Frequency plasma). The effects of breakdown in the electrical insulation inside the ion source are analyzed with particular care to the embedded diagnostic system, i.e. the thermal and electrical measurements installed on the grids and ion source case and transferred by multipolar cables to the acquisition system, located inside the 100 kV insulated deck and hosting the ion source power supply, the signal conditioning and the acquisition cubicles. The breakdown affects strongly the measurements, so it has to be mitigated in order to guarantee adequate reliability of the whole measurement set. A parametric study has been carried out on a detailed circuital model for fast transients, implemented using SimPowerSystems{sup TM} tool of Matlab Simulink code. The model includes all the relevant conductors of the subsystems downstream the insulating transformer of the Accelerating Grids Power Supply (AGPS), i.e. the AGPS rectifier, the multipolar transmission line, the 100 kV High Voltage Deck, the ion source power supply and the ion source itself. In particular all the magnetic and capacitive couplings have been computed by a proper 2D fem model. The optimization of the cabling layout, of the wire screening and of the protection devices, like surge arresters and resistors, has been carried out through the accurate modeling of the circuit. The energy dissipated on each ion source surge arrester is estimated and adequate TSD (transient suppression devices) are selected. A peculiar and difficult to satisfy requirement is the high number of surges that the TSD has to withstand. Breakdowns between components polarized at different voltages have been considered, in order to inspect the worst condition during a breakdown.

  17. Induction cell breakdown experiments for the Dual-Axis Radiographic Hydrotest (DARHT) Facility

    Energy Technology Data Exchange (ETDEWEB)

    Earley, L.M.; Barnes, G.A.; Eversole, S.A.; Kauppila, T.J.; Keel, G.; Liska, D.J.; Moir, D.C.; Parsons, W.M.; Rader, D.C.

    1991-01-01

    Linear induction cells for the Dual-Axis Radiographic Hydrotest (DARHT) Facility have been tested to determine their high-voltage breakdown characteristics. A variety of full scale insulators were tested both in actual cells and in fixtures simulating induction cells. All insulators were constructed using cross-linked polystyrene (Rexolite). High-voltage pulses up to 550 kV were applied to the insulators using both a 60-ns pulse Blumlein and a 200-ns pulse cable Marx. Two different vacuum gaps were used in these tests, 1.46 and 1.91 cm. The tests were performed at various vacuum levels ranging from 1 {times} 10{sup {minus}6} to 5 {times} 10{sup {minus}8} torr. Breakdown tests of the insulators were also performed with an electron beam generated in the vacuum gap through the use of a velvet emitter. The gap voltage and current were measured using calibrated E-dot and B-dot probes. 15 refs., 7 figs.

  18. Modeling and analysis of breakdown EMI protection for MITICA insulation and embedded diagnostics

    Energy Technology Data Exchange (ETDEWEB)

    Pesce, A., E-mail: alberto.pesce@igi.cnr.it [Consorzio RFX – Associazione EURATOM-ENEA sulla Fusione, Corso Stati Uniti 4, 35127 Padova (Italy); Pomaro, N.; Zamengo, A.; Bigi, M.; Toigo, V. [Consorzio RFX – Associazione EURATOM-ENEA sulla Fusione, Corso Stati Uniti 4, 35127 Padova (Italy)

    2013-10-15

    Highlights: ► A fast transient model of MITICA electrical system with all relevant conductors has been developed. ► MITICA insulations on Source and main Bushing are at high risk due to electrical breakdowns. ► The introduction of capacitances in some critical points is effective to reduce overvoltages. ► Signal cables must be screened at both ends to and follow the route of reference potential conductors. -- Abstract: On the Padova PRIMA facility the prototype of the ITER HNBs will be tested in the device called MITICA (Megavolt ITER Injector and Concept Advancement). During Beam operation breakdowns will occur across the accelerator grids and Source components causing transient high voltages between parts normally at low voltages, so stressing the electrical insulation of sensor cables, connectors and feedthroughs. The MITICA electrical model implemented to estimate the characteristics of the voltage transients is here described, with particular emphasis on the feedthroughs, on the source insulation and on the embedded diagnostic system. As severe stresses result with the present design mitigating measures are necessary to avoid damage and maintain proper operation. The solution proposed and supported by the analyses to introduce concentrated capacitances in some critical points turns out to be suitable in terms of electrical effects and of technical compatibility with the main requirements of MITICA environment.

  19. Plasma Discharges in Gas Bubbles in Liquid Water: Breakdown Mechanisms and Resultant Chemistry

    Science.gov (United States)

    Gucker, Sarah M. N.

    is created either through flowing gas around the high voltage electrode in the discharge tube or self-generated by the plasma as in the steam discharge. This second method allows for large scale processing of contaminated water and for bulk chemical and optical analysis. Breakdown mechanisms of attached and unattached gas bubbles in liquid water were investigated using the first device. The breakdown scaling relation between breakdown voltage, pressure and dimensions of the discharge was studied. A Paschen-like voltage dependence for air bubbles in liquid water was discovered. The results of high-speed photography suggest the physical charging of the bubble due to a high voltage pulse; this charging can be significant enough to produce rapid kinetic motion of the bubble about the electrode region as the applied electric field changes over a voltage pulse. Physical deformation of the bubble is observed. This charging can also prevent breakdown from occurring, necessitating higher applied voltages to overcome the phenomenon. This dissertation also examines the resulting chemistry from plasma interacting with the bubble-liquid system. Through the use of optical emission spectroscopy, plasma parameters such as electron density, gas temperature, and molecular species production and intensity are found to have a time-dependence over the ac voltage cycle. This dependence is also source gas type dependent. These dependencies afford effective control over plasma-driven decomposition. The effect of plasma-produced radicals on various wastewater simulants is studied. Various organic dyes, halogenated compounds, and algae water are decomposed and assessed. Toxicology studies with melanoma cells exposed to plasma-treated dye solutions are completed, demonstrating the non-cytotoxic quality of the decomposition process. Thirdly, this dissertation examines the steam plasma system, developed through this research to circumvent the acidification associated with gas-feed discharges

  20. High Voltage Distribution

    Science.gov (United States)

    Norbeck, Edwin; Miller, Michael; Onel, Yasar

    2010-11-01

    For detector arrays that require 5 to 10 kV at a few microamps each for hundreds of detectors, using hundreds of HV power supplies is unreasonable. Bundles of hundreds of HV cables take up space that should be filled with detectors. A typical HV module can supply 1 ma, enough current for hundreds of detectors. It is better to use a single HV module and distribute the current as needed. We show a circuit that, for each detector, measures the current, cuts off the voltage if the current exceeds a set maximum, and allows the HV to be turned on or off from a control computer. The entire array requires a single HV cable and 2 or 3 control lines. This design provides the same voltage to all of the detectors, the voltage set by the single HV module. Some additional circuitry would allow a computer controlled voltage drop between the HV and each individual detector.

  1. Numerical Borehole Breakdown Investigations using XFEM

    Science.gov (United States)

    Beckhuis, Sven; Leonhart, Dirk; Meschke, Günther

    2016-04-01

    During pressurization of a wellbore a typical downhole pressure record shows the following regimes: first the applied wellbore pressure balances the reservoir pressure, then after the compressive circumferential hole stresses are overcome, tensile stresses are induced on the inside surface of the hole. When the magnitude of these stresses reach the tensile failure stress of the surrounding rock medium, a fracture is initiated and propagates into the reservoir. [1] In standard theories this pressure, the so called breakdown pressure, is the peak pressure in the down-hole pressure record. However experimental investigations [2] show that the breakdown did not occur even if a fracture was initiated at the borehole wall. Drilling muds had the tendency to seal and stabilize fractures and prevent fracture propagation. Also fracture mechanics analysis of breakdown process in mini-frac or leak off tests [3] show that the breakdown pressure could be either equal or larger than the fracture initiation pressure. In order to gain a deeper understanding of the breakdown process in reservoir rock, numerical investigations using the extended finite element method (XFEM) for hydraulic fracturing of porous materials [4] are discussed. The reservoir rock is assumed to be pre-fractured. During pressurization of the borehole, the injection pressure, the pressure distribution and the position of the highest flux along the fracture for different fracturing fluid viscosities are recorded and the influence of the aforementioned values on the stability of fracture propagation is discussed. [1] YEW, C. H. (1997), "Mechanics of Hydraulic Fracturing", Gulf Publishing Company [2] MORITA, N.; BLACK, A. D.; FUH, G.-F. (1996), "Borehole Breakdown Pressure with Drilling Fluids". International Journal of Rock Mechanics and Mining Sciences 33, pp. 39-51 [3] DETOURNAY, E.; CARBONELL, R. (1996), "Fracture Mechanics Analysis of the Breakdown Process in Minifrac or Leakoff Test", Society of Petroleum

  2. Modeling for Formation of Conducting Path in Cu/SiO2/Pt Memory Devices: Based on Soft Breakdown Mechanism

    Science.gov (United States)

    Luo, J. M.

    2013-09-01

    The forming process before resistive switching in Cu/ SiO2/Pt memory devices, corresponding to the formation of conducting path, can be regarded as the dielectric soft breakdown. Based on the analysis of breakdown mechanism, a dynamic model combining the transition of Cu ions with the space-charge effect has been proposed, and demonstrates that the forming voltage depends on the thickness of oxide, the sweep rate of voltage and temperature. The predictions of the model are consistent with the experiment data reported in the literature and it is believed that the transition of Cu ions across the oxide and the accumulation of Cu ions at the SiO2/Pt interface could be responsible for the conductive path formation in Cu/SiO2/Pt memory devices.

  3. Low-voltage gyrotrons

    Science.gov (United States)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-03-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5-10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%-2% in the submillimeter wavelength region).

  4. Electrical breakdown of carbon nanotube devices and the predictability of breakdown position

    Directory of Open Access Journals (Sweden)

    Gopal Krishna Goswami

    2012-06-01

    Full Text Available We have investigated electrical transport properties of long (>10 μm multiwalled carbon nanotubes (NTs by dividing individuals into several segments of identical length. Each segment has different resistance because of the random distribution of defect density in an NT and is corroborated by Raman studies. Higher is the resistance, lower is the current required to break the segments indicating that breakdown occurs at the highly resistive segment/site and not necessarily at the middle. This is consistent with the one-dimensional thermal transport model. We have demonstrated the healing of defects by annealing at moderate temperatures or by current annealing. To strengthen our mechanism, we have carried out electrical breakdown of nitrogen doped NTs (NNTs with diameter variation from one end to the other. It reveals that the electrical breakdown occurs selectively at the narrower diameter region. Overall, we believe that our results will help to predict the breakdown position of both semiconducting and metallic NTs.

  5. Amplitude-temporal characteristics of a supershort avalanche electron beam generated during subnanosecond breakdown in air and nitrogen

    Science.gov (United States)

    Tarasenko, V. F.; Baksht, E. Kh.; Beloplotov, D. V.; Burachenko, A. G.; Lomaev, M. I.

    2016-04-01

    The amplitude-temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude-temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.

  6. Device for monitoring cell voltage

    Science.gov (United States)

    Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  7. High voltage pulse generator

    Science.gov (United States)

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  8. Volume Diffuse Dielectric Barrier Discharge Plasma Produced by Nanosecond High Voltage Pulse in Airflow

    Institute of Scientific and Technical Information of China (English)

    QI Haicheng; GAO Wei; FAN Zhihui; LIU Yidi; REN Chunsheng

    2016-01-01

    Volume diffuse dielectric barrier discharge (DBD) plasma is produced in subsonic airflow by nanosecond high-voltage pulse power supply with a plate-to-plate discharge cell at 6 mm air gap length.The discharge images,optical emission spectra (OES),the applied voltage and current waveforms of the discharge at the changed airflow rates are obtained.When airflow rate is increased,the transition of the discharge mode and the variations of discharge intensity,breakdown characteristics and the temperature of the discharge plasma are investigated.The results show that the discharge becomes more diffuse,discharge intensity is decreased accompanied by the increased breakdown voltage and time lag,and the temperature of the discharge plasma reduces when airflow of small vclocity is introduced into the discharge gap.These phenomena are because that the airflow changes the spatial distribution of the heat and the space charge in the discharge gap.

  9. Volume Diffuse Dielectric Barrier Discharge Plasma Produced by Nanosecond High Voltage Pulse in Airflow

    Science.gov (United States)

    Qi, Haicheng; Gao, Wei; Fan, Zhihui; Liu, Yidi; Ren, Chunsheng

    2016-05-01

    Volume diffuse dielectric barrier discharge (DBD) plasma is produced in subsonic airflow by nanosecond high-voltage pulse power supply with a plate-to-plate discharge cell at 6 mm air gap length. The discharge images, optical emission spectra (OES), the applied voltage and current waveforms of the discharge at the changed airflow rates are obtained. When airflow rate is increased, the transition of the discharge mode and the variations of discharge intensity, breakdown characteristics and the temperature of the discharge plasma are investigated. The results show that the discharge becomes more diffuse, discharge intensity is decreased accompanied by the increased breakdown voltage and time lag, and the temperature of the discharge plasma reduces when airflow of small velocity is introduced into the discharge gap. These phenomena are because that the airflow changes the spatial distribution of the heat and the space charge in the discharge gap. supported by National Natural Science Foundation of China (No. 51437002)

  10. Evidence for oxygen vacancy manipulation in La1/3Sr2/3FeO3− thin films via voltage controlled solid-state ionic gating

    Directory of Open Access Journals (Sweden)

    A. L. Krick

    2017-04-01

    Full Text Available Reversible changes of the structural and electronic transport properties of La1/3Sr2/3FeO3-δ/Gd-doped CeO2 heterostructures arising from the manipulation of δ are presented. Thermally induced oxygen loss leads to a c-axis lattice expansion and an increase in resistivity in a La1/3Sr2/3FeO3-δ film capped with Gd-doped CeO2. In a three-terminal device where a gate bias is applied across the Gd-doped CeO2 layer to alter the La1/3Sr2/3FeO3-δ oxygen stoichiometry, the ferrite channel is shown to undergo a change in resistance of an order of magnitude using gate voltages of less than 1 V applied at 500 K. The changes in resistance remain upon cooling to room temperature, in the absence of a gate bias, suggesting solid state ionic gating of perovskite oxides as a promising platform for applications in non-volatile, multistate devices.

  11. The Role of Plasma Shielding in Double-Pulse Femtosecond Laser-Induced Breakdown Spectroscopy

    CERN Document Server

    Penczak, John S; Bar, Ilana; Gordon, Robert J

    2013-01-01

    It is well known that optical emission produced by femtosecond laser-induced breakdown on a surface may be enhanced by using a pair of laser pulses separated by a suitable delay. Here we elucidate the mechanism for this effect both experimentally and theoretically. Using a bilayer sample consisting of a thin film of Ag deposited on an Al substrate as the ablation target and measuring the breakdown spectrum as a function of fluence and pulse delay, it is shown experimentally that the enhanced signal is not caused by additional ablation initiated by the second pulse. Rather, particle-in-cell calculations show that the plasma produced by the first pulse shields the surface from the second pulse for delays up to 100 ps. These results indicate that the enhancement is the result of excitement of particles entrained in the plasma produced by the first pulse.

  12. A Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film Transistors.

    Science.gov (United States)

    Ma, Xiaochen; Zhang, Jiawei; Cai, Wensi; Wang, Hanbin; Wilson, Joshua; Wang, Qingpu; Xin, Qian; Song, Aimin

    2017-04-11

    Low operating voltages have been long desired for thin-film transistors (TFTs). However, it is still challenging to realise 1-V operation by using conventional dielectrics due to their low gate capacitances and low breakdown voltages. Recently, electric double layers (EDLs) have been regarded as a promising candidate for low-power electronics due to their high capacitance. In this work, we present the first sputtered SiO2 solid-state electrolyte. In order to demonstrate EDL behaviour, a sputtered 200 nm-thick SiO2 electrolyte was incorporated into InGaZnO TFTs as the gate dielectric. The devices exhibited an operating voltage of 1 V, a threshold voltage of 0.06 V, a subthreshold swing of 83 mV dec(-1) and an on/off ratio higher than 10(5). The specific capacitance was 0.45 µF cm(-2) at 20 Hz, which is around 26 times higher than the value obtained from thermally oxidised SiO2 films with the same thickness. Analysis of the microstructure and mass density of the sputtered SiO2 films under different deposition conditions indicates that such high capacitance might be attributed to mobile protons donated by atmospheric water. The InGaZnO TFTs with the optimised SiO2 electrolyte also showed good air stability. This work provides a new pathway to the realisation of high-yield low-power electronics.

  13. Piezoelectric transformers for low-voltage generation of gas discharges and ionic winds in atmospheric air

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Michael J. [Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States); Go, David B., E-mail: dgo@nd.edu [Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States); Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States)

    2015-12-28

    To generate a gas discharge (plasma) in atmospheric air requires an electric field that exceeds the breakdown threshold of ∼30 kV/cm. Because of safety, size, or cost constraints, the large applied voltages required to generate such fields are often prohibitive for portable applications. In this work, piezoelectric transformers are used to amplify a low input applied voltage (<30 V) to generate breakdown in air without the need for conventional high-voltage electrical equipment. Piezoelectric transformers (PTs) use their inherent electromechanical resonance to produce a voltage amplification, such that the surface of the piezoelectric exhibits a large surface voltage that can generate corona-like discharges on its corners or on adjacent electrodes. In the proper configuration, these discharges can be used to generate a bulk air flow called an ionic wind. In this work, PT-driven discharges are characterized by measuring the discharge current and the velocity of the induced ionic wind with ionic winds generated using input voltages as low as 7 V. The characteristics of the discharge change as the input voltage increases; this modifies the resonance of the system and subsequent required operating parameters.

  14. On the measurement of laser-induced plasma breakdown thresholds

    Energy Technology Data Exchange (ETDEWEB)

    Brieschenk, Stefan [Centre for Hypersonics, The University of Queensland, Brisbane 4072 (Australia); Kleine, Harald; O' Byrne, Sean [The University of New South Wales Canberra, The Australian Defence Force Academy, Canberra 2600 (Australia)

    2013-09-07

    The breakdown threshold of a gas exposed to intense laser-radiation is a function of gas and laser properties. Breakdown thresholds reported in the literature often vary greatly and these differences can partially be traced back to the method that is typically used to determine breakdown thresholds. This paper discusses the traditional method used to determine breakdown thresholds and the potential errors that can arise using this approach, and presents an alternative method which can yield more accurate data especially when determining breakdown thresholds as functions of gas pressure.

  15. High Voltage GaN Schottky Rectifiers

    Energy Technology Data Exchange (ETDEWEB)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  16. Initiation stage of nanosecond breakdown in liquid

    Science.gov (United States)

    Pekker, Mikhail; Seepersad, Yohan; Shneider, Mikhail N.; Fridman, Alexander; Dobrynin, Danil

    2014-01-01

    In this paper, based on a theoretical model (Shneider and Pekker 2013 Phys. Rev. E 87 043004), it has been shown experimentally that the initial stage of development of a nanosecond breakdown in liquids is associated with the appearance of discontinuities in the liquid (cavitation) under the influence of electrostriction forces. Comparison of experimentally measured area dimensions and its temporal development were found to be in a good agreement with the theoretical calculations. This work is a continuation of the experimental and theoretical works (Dobrynin et al 2013 J. Phys. D: Appl. Phys. 46 105201, Starikovskiy 2013 Plasma Sources Sci. Technol. 22 012001, Seepersad et al 2013 J. Phys. D: Appl. Phys. 46 162001, Marinov et al 2013 Plasma Sources Sci. Technol. 22 042001, Seepersad et al 2013 J. Phys. D: Appl. Phys. 46 3555201), initiated by the work in (Shneider et al 2012 IEEE Trans. Dielectr. Electr. Insul. 19 1597-82), in which the electrostriction mechanism of breakdown was proposed.

  17. Laser induced breakdown spectroscopy on meteorites

    Energy Technology Data Exchange (ETDEWEB)

    De Giacomo, A. [Department of Chemistry, University of Bari (Italy); MIP-CNR sec Bari (Italy)], E-mail: alessandro.degiacomo@ba.imip.cnr.it; Dell' Aglio, M.; De Pascale, O. [MIP-CNR sec Bari (Italy); Longo, S.; Capitelli, M. [Department of Chemistry, University of Bari (Italy); MIP-CNR sec Bari (Italy)

    2007-12-15

    The classification of meteorites when geological analysis is unfeasible is generally made by the spectral line emission ratio of some characteristic elements. Indeed when a meteorite impacts Earth's atmosphere, hot plasma is generated, as a consequence of the braking effect of air, with the consequent ablation of the falling body. Usually, by the plasma emission spectrum, the meteorite composition is determined, assuming the Boltzmann equilibrium. The plasma generated during Laser Induced Breakdown Spectroscopy (LIBS) experiment shows similar characteristics and allows one to verify the mentioned method with higher accuracy. On the other hand the study of Laser Induced Breakdown Spectroscopy on meteorite can be useful for both improving meteorite classification methods and developing on-flight techniques for asteroid investigation. In this paper certified meteorites belonging to different typologies have been investigated by LIBS: Dofhar 461 (lunar meteorite), Chondrite L6 (stony meteorite), Dofhar 019 (Mars meteorite) and Sikhote Alin (irony meteorite)

  18. Breakdown and partial discharges in magnetic liquids

    Science.gov (United States)

    Herchl, F.; Marton, K.; Tomčo, L.; Kopčanský, P.; Timko, M.; Koneracká, M.; Kolcunová, I.

    2008-05-01

    The dielectric properties (permittivity, loss factor, dielectric breakdown strength) of magnetic liquids were investigated. The magnetic liquids were composed of magnetite particles coated with oleic acid as surfactant and dispersed in transformer oil. To determine their dielectric properties they were subjected to a uniform magnetic field at high alternating electric fields up to 14 MV m-1. Nearly constant permittivity of magnetic liquid with particle volume concentration Φ = 0.0019 as a function of electric field was observed. Magnetic liquids with concentrations Φ = 0.019 and 0.032 showed significant changes of permittivity and loss factor dependent on electric and magnetic fields. The best concentration of magnetic fluid was found at which partial current impulse magnitudes were the lowest. The breakdown strength distribution of the magnetic liquid with Φ = 0.0025 was fitted with the Duxbury-Leath, Weibull and Gauss distribution functions.

  19. Project management strategies for prototyping breakdowns

    DEFF Research Database (Denmark)

    Granlien, Maren Sander; Pries-Heje, Jan; Baskerville, Richard

    2009-01-01

    , managing the explorative and iterative aspects of prototyping projects is not a trivial task. We examine the managerial challenges in a small scale prototyping project in the Danish healthcare sector where a prototype breakdown and project escalation occurs. From this study we derive a framework...... of strategies for coping with escalation in troubled prototyping projects; the framework is based on project management triangle theory and is useful when considering how to manage prototype breakdown and escalation. All strategies were applied in the project case at different points in time. The strategies led......Prototyping is often presented as a universal solution to many intractable information systems project problems. Prototyping is known to offer at least three advantages (1) provide users with a concrete understanding, (2) eliminate the confusion, (3) cope with uncertainty. On the other hand...

  20. Fast restoration of large area breakdown for power distribution systems

    Institute of Scientific and Technical Information of China (English)

    LIU Jian; XU Jing-qiu; CHENG Hong-li

    2006-01-01

    An adjacent table-based simplified model of distribution networks containing medium voltage buses of a substation is established.Identification of bus outage and the condition to start fast restoration procedure are discussed.A complex load shading parameter is set up to describe various load shading schemes.The imaginary part of the load shading parameter describes the states of switches of load shading schemes while the real part is the corresponding amount of shaded load.A new concept of independent tripping operation is also put forward.The procedure to search the operation with the least amount of shaded load for a feeder and a connected domain are detailed.The procedure for fast restoration of a large area breakdown of the whole distribution network under emergency states is dealt with using a typical grid distribution network as an example.Results of analysis show that the direct load shading scheme under the most balanced topology is not always the optimal scheme.The proposed method can obtain the optimal operating mode with the least amount of shaded load thus showing its feasibility.

  1. Voltage Regulators for Photovoltaic Systems

    Science.gov (United States)

    Delombard, R.

    1986-01-01

    Two simple circuits developed to provide voltage regulation for highvoltage (i.e., is greater than 75 volts) and low-voltage (i.e., is less than 36 volts) photovoltaic/battery power systems. Use of these circuits results in voltage regulator small, low-cost, and reliable, with very low power dissipation. Simple oscillator circuit controls photovoltaic-array current to regulate system voltage and control battery charging. Circuit senses battery (and system) voltage and adjusts array current to keep battery voltage from exceeding maximum voltage.

  2. Initiation stage of nanosecond breakdown in liquid

    CERN Document Server

    Pekker, Mikhail; Shneider, Mikhail; Fridman, Alexander; Dobrynin, Danil

    2013-01-01

    In this paper, based on a theoretical model [1], it has been shown experimentally that the initial stage of development of a nanosecond breakdown in liquids is associated with the appearance of discontinuities in the liquid (cavitation) under the influence of electrostriction forces. Comparison of experimentally measured area dimensions and its temporal development were found to be in a good agreement with the theoretical calculations.

  3. Understanding and Improving High Voltage Vacuum Insulators for Microsecond Pulses

    Energy Technology Data Exchange (ETDEWEB)

    Javedani, J B; Goerz, D A; Houck, T L; Lauer, E J; Speer, R D; Tully, L K; Vogtlin, G E; White, A D

    2007-03-05

    High voltage insulation is one of the main areas of pulsed power research and development, and dielectric breakdown is usually the limiting factor in attaining the highest possible performance in pulsed power devices. For many applications the delivery of pulsed power into a vacuum region is the most critical aspect of operation. The surface of an insulator exposed to vacuum can fail electrically at an applied field more than an order or magnitude below the bulk dielectric strength of the insulator. This mode of breakdown, called surface flashover, imposes serious limitations on the power flow into a vacuum region. This is especially troublesome for applications where high voltage conditioning of the insulator and electrodes is not practical and for applications where relatively long pulses, on the order of several microseconds, are required. The goal of this project is to establish a sound fundamental understanding of the mechanisms that lead to surface flashover, and then evaluate the most promising techniques to improve vacuum insulators and enable high voltage operation at stress levels near the intrinsic bulk breakdown limits of the material. The approach we proposed and followed was to develop this understanding through a combination of theoretical and computation methods coupled with experiments to validate and quantify expected behaviors. In this report we summarize our modeling and simulation efforts, theoretical studies, and experimental investigations. The computational work began by exploring the limits of commercially available codes and demonstrating methods to examine field enhancements and defect mechanisms at microscopic levels. Plasma simulations with particle codes used in conjunction with circuit models of the experimental apparatus enabled comparisons with experimental measurements. The large scale plasma (LSP) particle-in-cell (PIC) code was run on multiprocessor platforms and used to simulate expanding plasma conditions in vacuum gap regions

  4. Studying Voltage Transformer Ferroresonance

    Directory of Open Access Journals (Sweden)

    Hamid Radmanesh

    2012-09-01

    Full Text Available This study studies the effect of Circuit Breaker Shunt Resistance (CBSR, Metal Oxide Vaistor (MOV and Neutral earth Resistance (NR on the control of ferroresonance in the voltage transformer. It is expected that NR can controlled ferroresonance better than MOV and CBSR. Study has been done on a one phase voltage transformer rated 100 VA, 275 kV. The simulation results reveal that considering the CBSR and MOV exhibits a great mitigating effect on ferroresonance overvoltages, but these resistances cannot control these phenomena for all range of parameters. By applying NR to the system structure, ferroresonance has been controlled and its amplitude has been damped for all parameters values.

  5. Numerical modeling of post current-zero dielectric breakdown in a low voltage circuit breaker

    Science.gov (United States)

    Thenkarai Narayanan, Venkat raman

    Oral delivery of macromolecular therapeutics has remained a challenge. Various factors govern principles of oral absorption, including solubility, tissue permeability, stability and dynamics of the gastrointestinal environment. Developing a macromolecular drug carrier for poorly bioavailable drugs is highly desirable. Dendritic polymers are attractive drug delivery vehicles because of their multifunctional surface groups, globular conformation, branched architecture, low poly dispersity and hydrophilic nature. They also offer traditional benefits of macromolecular systems such as extended plasma residence time and reduced systemic toxicity. Developing a poly(amido amine) (PAMAM) dendrimer-based oral drug delivery vehicle is the long-term goal of this research. PAMAM dendrimers can offer advantages in terms of improving solubility and permeability that can ultimately enhance oral absorption of poorly bioavailable drugs. In this dissertation, first the safety and maximum tolerated dose of six different PAMAM dendrimers was studied after oral and systemic administration. Surface charge of these dendrimers significantly influenced their toxicity profile in vivo with cationic systems proving to be more toxic than anionic systems. The inherent permeability of native anionic dendrimers was then evaluated in a mouse model to assess their potential in oral drug delivery. Results suggested that anionic G6.5 dendrimers exhibited appreciable bioavailability with partial degradation observed under in vivo conditions. Subsequently, camptothecin, a model drug used for the treatment of colorectal carcinoma, was attached to PAMAM dendrimers. Antitumor activity revealed that these conjugates were effective in inhibiting growth of cancer cells in vitro. Preliminary efficacy studies conducted in xenograft tumor models also indicated that dendrimer-drug conjugates have potential for oral chemotherapy. Further detailed in vivo studies are needed to demonstrate the utility of PAMAM-drug conjugates for effective and safe delivery of chemotherapeutics by the oral route.

  6. New Breakdown Electric Field Calculation for SF6 High Voltage Circuit Breaker Applications

    Institute of Scientific and Technical Information of China (English)

    Ph.ROBIN-JOUAN; M.YOUSFI

    2007-01-01

    The critical electric fields of hot SF6 are calculated including both electron and ion kinetics in wide ranges of temperature and pressure,namely from 300 K up to 4000 K and 2 atmospheres up to 32 atmospheres respectively.Based on solving a multi-term electron Boltzmann equation the calculations use improved electron-gas collision cross sections for twelve SF6 dissociation products with a particular emphasis on the electron-vibrating molecule interactions.The ion kinetics is also considered and its role on the critical field becomes non negligible as the temperature is above 2000 K.These critical fields are then used in hydrodynamics simulations which correctly predict the circuit breaker behaviours observed in the case of breaking tests.

  7. Breakdown localization in the fixed gap system

    CERN Document Server

    Rajamaki, Robin; Wuensch, Walter

    2014-01-01

    Accurate localization of breakdowns in vacuum could help shed light on breakdown related processes that are not yet fully understood. At the DC spark lab at CERN, an instrument called the Fixed Gap System (FGS) has been developed partially for this purpose. Among other things, the FGS has four built-in antennas, which are intended for breakdown localization. The capability of this aspect of the FGS was explored in this report. Specifically, the feasibility of using a method similar to that which is used in cavity Beam Position Monitors (BPMs) was investigated. The usable frequency range of the current experimental setup was also studied. Firstly, a modal analysis of the inner geometry of the FGS was done in HFSS. This showed that the two first modes to be expected in the spark gap quite differ from those of the ideal pillbox – both in field pattern and in frequency ( 4 and 6 GHz vs. 0.2 and 3 GHz). Secondly, S-parameters of the system were measured. These showed that the coupling between antennas is weak...

  8. Runaway breakdown and electrical discharges in thunderstorms

    Science.gov (United States)

    Milikh, Gennady; Roussel-Dupré, Robert

    2010-12-01

    This review considers the precise role played by runaway breakdown (RB) in the initiation and development of lightning discharges. RB remains a fundamental research topic under intense investigation. The question of how lightning is initiated and subsequently evolves in the thunderstorm environment rests in part on a fundamental understanding of RB and cosmic rays and the potential coupling to thermal runaway (as a seed to RB) and conventional breakdown (as a source of thermal runaways). In this paper, we describe the basic mechanism of RB and the conditions required to initiate an observable avalanche. Feedback processes that fundamentally enhance RB are discussed, as are both conventional breakdown and thermal runaway. Observations that provide clear evidence for the presence of energetic particles in thunderstorms/lightning include γ-ray and X-ray flux intensifications over thunderstorms, γ-ray and X-ray bursts in conjunction with stepped leaders, terrestrial γ-ray flashes, and neutron production by lightning. Intense radio impulses termed narrow bipolar pulses (or NBPs) provide indirect evidence for RB particularly when measured in association with cosmic ray showers. Our present understanding of these phenomena and their enduring enigmatic character are touched upon briefly.

  9. Dielectric breakdown induced by picosecond laser pulses

    Science.gov (United States)

    Smith, W. L.; Bechtel, J. H.; Bloembergen, N.

    1976-01-01

    The damage thresholds of transparent optical materials were investigated. Single picosecond pulses at 1.06 microns, 0.53 microns and 0.35 microns were obtained from a mode locked Nd-YAG oscillator-amplifier-frequency multiplier system. The pulses were Gaussian in space and time and permitted the determination of breakdown thresholds with a reproducibility of 15%. It was shown that the breakdown thresholds are characteristic of the bulk material, which included nine alkali halides, five different laser host materials, KDP, quartz, sapphire and calcium fluoride. The extension of the damage data to the ultraviolet is significant, because some indication was obtained that two- and three-photon absorption processes begin to play a role in determining the threshold. Throughout the visible region of the spectrum the threshold is still an increasing function of frequency, indicating that avalanche ionization is the dominant factor in determining the breakdown threshold. This was confirmed by a detailed study of the damage morphology with a high resolution microscope just above the threshold. The influence of self focusing is discussed, and evidence for beam distortion below the power threshold for complete self focusing is presented, confirming the theory of Marburger.

  10. Kinetic Simulations of Dense Plasma Focus Breakdown

    Science.gov (United States)

    Schmidt, A.; Higginson, D. P.; Jiang, S.; Link, A.; Povilus, A.; Sears, J.; Bennett, N.; Rose, D. V.; Welch, D. R.

    2015-11-01

    A dense plasma focus (DPF) device is a type of plasma gun that drives current through a set of coaxial electrodes to assemble gas inside the device and then implode that gas on axis to form a Z-pinch. This implosion drives hydrodynamic and kinetic instabilities that generate strong electric fields, which produces a short intense pulse of x-rays, high-energy (>100 keV) electrons and ions, and (in deuterium gas) neutrons. A strong factor in pinch performance is the initial breakdown and ionization of the gas along the insulator surface separating the two electrodes. The smoothness and isotropy of this ionized sheath are imprinted on the current sheath that travels along the electrodes, thus making it an important portion of the DPF to both understand and optimize. Here we use kinetic simulations in the Particle-in-cell code LSP to model the breakdown. Simulations are initiated with neutral gas and the breakdown modeled self-consistently as driven by a charged capacitor system. We also investigate novel geometries for the insulator and electrodes to attempt to control the electric field profile. The initial ionization fraction of gas is explored computationally to gauge possible advantages of pre-ionization which could be created experimentally via lasers or a glow-discharge. Prepared by LLNL under Contract DE-AC52-07NA27344.

  11. Comparative Studies of High-Gradient Rf and Dc Breakdowns

    CERN Document Server

    Kovermann, Jan Wilhelm; Wuensch, Walter

    2010-01-01

    The CLIC project is based on normal-conducting high-gradient accelerating structures with an average accelerating gradient of 100 MV/m. The maximum achievable gradient in these structures is limited by the breakdown phenomenon. The physics of breakdowns is not yet fully understood quantitatively. A full knowledge could have strong impact on the design, material choice and construction of rf structures. Therefore, understanding breakdowns has great importance to reaching a gradient of 100MV/m with an acceptable breakdown probability. This thesis addresses the physics underlying the breakdown effect, focusing on a comparison of breakdowns in rf structures and in a dc spark setup. The dc system is simpler, easier to benchmark against simulations, with a faster turnaround time, but the relationship to rf breakdown must be established. To do so, an experimental approach based on optical diagnostics and electrical measurements methods was made. Following an introduction into the CLIC project, a general theoretical ...

  12. To the electrostrictive mechanism of nanosecond-pulsed breakdown in liquid phase

    CERN Document Server

    Seepersad, Yohan; Pekker, Mikhail; Shneider, Mikhail N; Fridman, Alexander

    2013-01-01

    In this study we have studied the initial stage of the nanosecond-pulsed discharge development in liquid phase. Modeling predicts that in the case of fast rising strong nonhomogeneous electric fields in the vicinity of high voltage pin electrode a region saturated with nanoscale non-uniformities may be developed. This phenomenon is attributed to the electrostriction mechanisms and may be used to explain development of breakdown in liquid phase. In this work, schlieren method was used in order to demonstrate formation of negative pressure region in liquids with different dielectric permittivity constants: water, ethanol and ethanol-water mixture. It is shown that this density perturbation, formed at the raising edge of the high voltage pulse, is followed by a generation of a shock wave propagating with the speed of sound away from the electrode, with negative pressure behind it.

  13. Time-dependent dielectric breakdown of MgO magnetic tunnel junctions and novel test method

    Science.gov (United States)

    Kim, Kyungjun; Choi, Chulmin; Oh, Youngtaek; Sukegawa, Hiroaki; Mitani, Seiji; Song, Yunheub

    2017-04-01

    Time-dependent dielectric breakdown (TDDB), which is used to measure reliability, depends on both the thickness of the tunnel barrier and bias voltage. In addition, the heat generated by self-heating in a magnetic tunneling junction (MTJ) affects TDDB. Therefore, we investigated TDDB with the self-heating effect for a MgO tunnel barrier with thicknesses of 1.1 and 1.2 nm by the constant voltage stress (CVS) method. Using the results of this experiment, we predicted a TDDB of 1.0 nm for the tunnel barrier. Also, we suggested the use of not only the CVS method, which is a common way of determining TDDB, but also the constant current stress (CCS) method, which compensates for the disadvantages of the CVS method.

  14. Experimental and analytical study of the DC breakdown characteristics of polypropylene laminated paper with a butt gap condition considering the insulation design of superconducting cable

    Science.gov (United States)

    Seo, In-jin; Choi, Won; Seong, Jae-gyu; Lee, Bang-wook; Koo, Ja-yoon

    2014-08-01

    It has been reported that the insulation design under DC stress is considered as one of the critical factors in determining the performance of high-voltage direct current (HVDC) superconducting cable. Therefore, it is fundamentally necessary to investigate the DC breakdown characteristics of the composite insulation system consisting of liquid nitrogen (LN2)/polypropylene-laminated-paper (PPLP). In particular, the insulation characteristics under DC polarity reversal condition should be verified to understand the polarity effect of the DC voltage considering the unexpected incidents taking place at line-commutated-converters (LCC) under service at a DC power grid. In this study, to examine the variation of DC electric field strength, the step voltage and polarity reversal breakdown tests are performed under DC stress. Also, we investigate the electric field distributions in a butt gap of the LN2/PPLP condition considering the DC polarity reversal by using simulation software.

  15. Improvement in the Design of Metal-Ceramic High Voltage Feedthroughs for use in High Energy Particle Accelerators

    CERN Document Server

    Weterings, W

    1999-01-01

    Large high-voltage devices operate in particle accelerators to steer charged particles in the desired direction. Solid and hollow rods of sintered alumina are used as insulating supports and high-voltage feedthroughs to power the electrodes of these electrostatic systems. The performance of the systems is often limited by voltage breakdown along the surface of the ceramic insulator (so-called surface flashover) or discharge between feedthrough and vacuum tank, which can lead to significant disruptions in terms of overall machine efficiency. Available results on the influence of the mechanical preparation, thermal history and particular cleaning techniques on commercially obtainable alumina samples have been studied in order to investigate possibilities for better preparation methodology of the insulating supports. Also the influence of the relative position of the feedthrough inside the vacuum tank on the high-voltage breakdown behaviour has been studied. This paper describes the theoretical and practical bac...

  16. Calcium ion requirement for acetylcholine-stimulated breakdown of triphosphoinositide in rabbit iris smooth muscle.

    Science.gov (United States)

    Akhtar, R A; Abdel-Latif, A A

    1978-03-01

    Previous studies from this laboratory have established that addition of acetylcholine (ACh) or norepinephrine to 32P-labeled rabbit iris smooth muscle increases significantly the breakdown of triphosphoinositide (TPI) and that these stimulatory effects are blocked by atropine and phentolamine, respectively. The present studies were undertaken in order to show the effect of Ca++ on the ACh-stimulated breakdown of TPI ("TPI effect") in this tissue. Paired iris smooth muscles were prelabeled with 32Pi for 30 minutes at 37 degrees C in Ca++-free iso-osmotic salt medium. The prelabeled irises were then washed and incubated for 10 minutes in nonradioactive Ca++-free medium which contained 10 mM 2-deoxyglucose under various conditions. The phospholipids were isolated by means of two-dimensional thin-layer chromatography and their radioactivities were determined. In the absence of Ca++, 50 micrometer ACh increased TPI breakdown and phosphatidic acid (PA) labeling by 16 and 38%, respectively. In the absence of ACh, 0.75 micrometer Ca++ increased TPI breakdown and PA labeling by 11 and 20%, respectively. When both ACh and Ca++ were added, the increase in TPI breakdown and PA labeling rose to 32 and 74%, respectively. The labeling of phosphatidylinositol was found to be insensitive to the presence of Ca++. Ca++ was determined in the iris smooth muscle and it was found to contain 3.13 mumol of Ca++ per g of tissue. This was reduced by 80% after the muscle was washed and incubated in a medium which contained 0.25 micrometer ethyleneglycol bis (beta-aminoethyl ether)-N,N'-tetraacetic acid (EGTA). The TPI effect was abolished by 0.25 micrometer EGTA and restored when excess Ca++ (1.25 micrometer) was added. Concentrations of Ca++ as low as 50 micrometer provoked a TPI effect. Sr++ (2 micrometer), but not Ba++ or Mn++, was found to substitute partially for Ca++. Ionophore A-23187 (20 micrometer) was found to increase the breakdown of TPI and labeling of PA by 11 and 24

  17. Different approach to pulsed high-voltage vacuum-insulation design

    Directory of Open Access Journals (Sweden)

    John G. Leopold

    2007-06-01

    Full Text Available A theoretical methodology promising improved design of vacuum insulation in high-voltage pulsed-power systems is described. It consists of shaping the electromagnetic fields within the system in such a way that charged particles which can in principle initiate vacuum surface breakdown are deflected away from the insulator surface, and secondary electrons, if emitted, are prevented from restriking the surface. Thus, vacuum surface breakdown is prevented before it is able to develop. Our methodology is presented here by a set of case studies.

  18. Turn-on and turn-off voltages of an avalanche p—n junction

    Science.gov (United States)

    Guoqing, Zhang; Dejun, Han; Changjun, Zhu; Xuejun, Zhai

    2012-09-01

    Characteristics of the turn-on and turn-off voltage of avalanche p—n junctions were demonstrated and studied. As opposed to existing reports, the differences between the turn-on and turn-off voltage cannot be neglected when the size of the p—n junction is in the order of microns. The difference increases inversely with the area of a junction, exerting significant influences on characterizing some parameters of devices composed of small avalanche junctions. Theoretical analyses show that the mechanism for the difference lies in the increase effect of the threshold multiplication factor at the turn-on voltage of a junction when the area of a junction decreases. Moreover, the “breakdown voltage" in the formula of the avalanche asymptotic current is, in essence, the avalanche turn-off voltage, and consequently, the traditional expression of the avalanche asymptotic current and the gain of a Geiger mode avalanche photodiode were modified.

  19. Effects of negative bias voltage on tribological properties of W-C-N thin films by magnetron sputtering%基体负偏压对W-C-N薄膜摩擦磨损性能的影响

    Institute of Scientific and Technical Information of China (English)

    喻利花; 王蕊; 许俊华

    2013-01-01

    采用多靶反应磁控溅射设备制备了一系列不同基体负偏压的W-C-N复合膜.采用X射线衍射仪、扫描电镜、能量色散谱仪、纳米压痕仪和摩擦磨损仪对薄膜进行表征.结果表明:当负偏压小于等于80 V时,薄膜表现出六方α-WCN相结构,增加到120 V时,转变为立方β-WCN相,薄膜硬度、弹性模量和膜基结合力出现对应最佳性能点的峰值;随着负偏压的增大,薄膜质量得到改善,磨损率和摩擦系数明显降低,负偏压达到200 V时,磨损率和摩擦系数分别出现最低值4.22×10-6 mm3·N-1 ·m-1和0.27;薄膜的磨损机制主要是磨粒磨损.%W-C-N nano-composite films were fabricated by reactive magnetron sputtering technique with different negative bias voltage (Vb) Microstructure and properties of the films were investigated by X-ray diffraction, scan electron microscopy, energy dispersive spectrometer, nano-indentor and tribometer. The results show that hexagonal a-WCN phase occurs in the films as Vb is lower than or equal to 80 V. However, as Vb further increases to 120 V, β-WCN forms. Raising Vb leads to increasing of hardness, elastic modulus and binding strength of the films to peak valuse. The inerease of Vb results in improvement of surface quality and decrease of friction coefficient and wear rate for the W-C-N films. As Vb increases to 120 V, the films get the minimum wear rate and coefficient of friction , which are 4. 22 ×10-6 mm3 ·N-1·m-1 and 0. 27, respectively. Abrasive wear is the main wear mechanism.

  20. VOLTAGE REGULATORS ASYNCHRONOUS GENERATORS

    Directory of Open Access Journals (Sweden)

    Grigorash O. V.

    2015-06-01

    Full Text Available A promising is currently the use of asynchronous generators with capacitive excitation as a source of electricity in stand-alone power systems. Drive asynchronous generators may exercise as a thermal engine and wind wheel wind power plant or turbines of small hydropower plants. The article discusses the structural and schematics of voltage stabilizers and frequency of asynchronous generators with improved operational and technical specifications. Technical novelty of design solutions of the magnetic system and stabilizers asynchronous generator of electricity parameters confirmed by the patents for the invention of the Russian Federation. The proposed technical solution voltage stabilizer asynchronous generators, can reduce the weight of the block capacitors excitation and reactive power compensation, as well as to simplify the control system power circuit which has less power electronic devices. For wind power plants it is an important issue not only to stabilize the voltage of the generator, but also the frequency of the current. Recommend functionality stabilizer schemes parameters of electric power made for direct frequency converters with artificial and natural switching power electronic devices. It is also proposed as part of stabilization systems use single-phase voltage, three-phase transformers with rotating magnetic field, reduce the level of electromagnetic interference generated by power electronic devices for switching, enhance the efficiency and reliability of the stabilizer.

  1. Geomagnetism and Induced Voltage

    Science.gov (United States)

    Abdul-Razzaq, W.; Biller, R. D.

    2010-01-01

    Introductory physics laboratories have seen an influx of "conceptual integrated science" over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it…

  2. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  3. RF BREAKDOWN STUDIES USING PRESSURIZED CAVITIES

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Rolland

    2014-09-21

    Many present and future particle accelerators are limited by the maximum electric gradient and peak surface fields that can be realized in RF cavities. Despite considerable effort, a comprehensive theory of RF breakdown has not been achieved and mitigation techniques to improve practical maximum accelerating gradients have had only limited success. Part of the problem is that RF breakdown in an evacuated cavity involves a complex mixture of effects, which include the geometry, metallurgy, and surface preparation of the accelerating structures and the make-up and pressure of the residual gas in which plasmas form. Studies showed that high gradients can be achieved quickly in 805 MHz RF cavities pressurized with dense hydrogen gas, as needed for muon cooling channels, without the need for long conditioning times, even in the presence of strong external magnetic fields. This positive result was expected because the dense gas can practically eliminate dark currents and multipacting. In this project we used this high pressure technique to suppress effects of residual vacuum and geometry that are found in evacuated cavities in order to isolate and study the role of the metallic surfaces in RF cavity breakdown as a function of magnetic field, frequency, and surface preparation. One of the interesting and useful outcomes of this project was the unanticipated collaborations with LANL and Fermilab that led to new insights as to the operation of evacuated normal-conducting RF cavities in high external magnetic fields. Other accomplishments included: (1) RF breakdown experiments to test the effects of SF6 dopant in H2 and He gases with Sn, Al, and Cu electrodes were carried out in an 805 MHz cavity and compared to calculations and computer simulations. The heavy corrosion caused by the SF6 components led to the suggestion that a small admixture of oxygen, instead of SF6, to the hydrogen would allow the same advantages without the corrosion in a practical muon beam line. (2) A

  4. Investigation of multipactor breakdown in communication satellite microwave co-axial systems

    Indian Academy of Sciences (India)

    S K Nagesh; D Revannasiddiah; S V K Shastry

    2005-01-01

    Multipactor breakdown or multipactor discharge is a form of high frequency discharge that may occur in microwave components operating at very low pressures. Some RF components of multi-channel communication satellites have co-axial geometry and handle high RF power under near-vacuum conditions. The breakdown occurs due to secondary electron resonance, wherein electrons move back and forth in synchronism with the RF voltage across the gap between the inner and outer conductors of the co-axial structure. If the yield of secondary electrons from the walls of the co-axial structure is greater than unity, then the electron density increases with time and eventually leads to the breakdown. In this paper, the current due to the oscillating electrons in the co-axial geometry has been treated as a radially oriented Hertzian dipole. The electric field, due to this dipole, at any point in the coaxial structure, may then be determined by employing the dyadic Green’s function technique. This field has been compared with the field that would exist in the absence of multipactor.

  5. An Ensemble Learning for Predicting Breakdown Field Strength of Polyimide Nanocomposite Films

    Directory of Open Access Journals (Sweden)

    Hai Guo

    2015-01-01

    Full Text Available Using the method of Stochastic Gradient Boosting, ten SMO-SVR are constructed into a strong prediction model (SGBS model that is efficient in predicting the breakdown field strength. Adopting the method of in situ polymerization, thirty-two samples of nanocomposite films with different percentage compositions, components, and thicknesses are prepared. Then, the breakdown field strength is tested by using voltage test equipment. From the test results, the correlation coefficient (CC, the mean absolute error (MAE, the root mean squared error (RMSE, the relative absolute error (RAE, and the root relative squared error (RRSE are 0.9664, 14.2598, 19.684, 22.26%, and 25.01% with SGBS model. The result indicates that the predicted values fit well with the measured ones. Comparisons between models such as linear regression, BP, GRNN, SVR, and SMO-SVR have also been made under the same conditions. They show that CC of the SGBS model is higher than those of other models. Nevertheless, the MAE, RMSE, RAE, and RRSE of the SGBS model are lower than those of other models. This demonstrates that the SGBS model is better than other models in predicting the breakdown field strength of polyimide nanocomposite films.

  6. X-ray spectromicroscopy investigation of soft and hard breakdown in RRAM devices

    Science.gov (United States)

    Carta, D.; Guttmann, P.; Regoutz, A.; Khiat, A.; Serb, A.; Gupta, I.; Mehonic, A.; Buckwell, M.; Hudziak, S.; Kenyon, A. J.; Prodromakis, T.

    2016-08-01

    Resistive random access memory (RRAM) is considered an attractive candidate for next generation memory devices due to its competitive scalability, low-power operation and high switching speed. The technology however, still faces several challenges that overall prohibit its industrial translation, such as low yields, large switching variability and ultimately hard breakdown due to long-term operation or high-voltage biasing. The latter issue is of particular interest, because it ultimately leads to device failure. In this work, we have investigated the physicochemical changes that occur within RRAM devices as a consequence of soft and hard breakdown by combining full-field transmission x-ray microscopy with soft x-ray spectroscopic analysis performed on lamella samples. The high lateral resolution of this technique (down to 25 nm) allows the investigation of localized nanometric areas underneath permanent damage of the metal top electrode. Results show that devices after hard breakdown present discontinuity in the active layer, Pt inclusions and the formation of crystalline phases such as rutile, which indicates that the temperature increased locally up to 1000 K.

  7. Study of the synergistic effect in dielectric breakdown property of CO2-O2 mixtures

    Science.gov (United States)

    Zhao, Hu; Deng, Yunkun; Lin, Hui

    2017-09-01

    Sulfur hexafluoride, SF6, is a common dielectric medium for high-voltage electrical equipment, but because it is a potent greenhouse gas, it is important to find less environmentally harmful alternatives. In this paper we explore the use of CO2 and O2 as one alternative. We studied the synergistic effect in a mixture of CO2 and O2 from both macroscopic and microscopic perspectives. The effect leads to a dielectric strength of the mixture being greater than the linear interpolation of the dielectric strengths of the two isolated gases. We analyzed the critical reduced electric field strength, (E/N)cr, the breakdown gas pressure reduced electric field, E/p, and the breakdown electron temperature, Tb, and their synergistic effect coefficients for various CO2 concentrations and various products of the gas pressure times the gap distance (pd). A gas discharge and breakdown mechanism in a homogenous electric field is known to be controlled by the generation and disappearance of free electrons, which strongly depend on the electron temperature. The results indicate that adding a small amount of O2 to CO2 can effectively improve the value of (E/N)cr and bring a clear synergistic effect. In addition, significantly different variation trends of the synergistic effect in the E/p and Tb of CO2-O2 mixtures at various CO2 concentrations and pd values were also observed.

  8. Subnanowatt carbon nanotube complementary logic enabled by threshold voltage control.

    Science.gov (United States)

    Geier, Michael L; Prabhumirashi, Pradyumna L; McMorrow, Julian J; Xu, Weichao; Seo, Jung-Woo T; Everaerts, Ken; Kim, Chris H; Marks, Tobin J; Hersam, Mark C

    2013-10-09

    In this Letter, we demonstrate thin-film single-walled carbon nanotube (SWCNT) complementary metal-oxide-semiconductor (CMOS) logic devices with subnanowatt static power consumption and full rail-to-rail voltage transfer characteristics as is required for logic gate cascading. These results are enabled by a local metal gate structure that achieves enhancement-mode p-type and n-type SWCNT thin-film transistors (TFTs) with widely separated and symmetric threshold voltages. These complementary SWCNT TFTs are integrated to demonstrate CMOS inverter, NAND, and NOR logic gates at supply voltages as low as 0.8 V with ideal rail-to-rail operation, subnanowatt static power consumption, high gain, and excellent noise immunity. This work provides a direct pathway for solution processable, large area, power efficient SWCNT advanced logic circuits and systems.

  9. Charge carrier transport in Cu(In,Ga)Se{sub 2} thin-film solar-cells studied by electron beam induced current and temperature and illumination dependent current voltage analysis

    Energy Technology Data Exchange (ETDEWEB)

    Nichterwitz, Melanie

    2012-01-10

    This work contributes to the understanding of generation dependent charge-carrier transport properties in Cu(In,Ga)Se{sub 2} (CIGSe)/ CdS/ ZnO solar cells and a consistent model for the electronic band diagram of the heterojunction region of the device is developed. Cross section electron-beam induced current (EBIC) and temperature and illumination dependent current voltage (IV) measurements are performed on CIGSe solar cells with varying absorber layer compositions and CdS thickness. For a better understanding of possibilities and limitations of EBIC measurements applied on CIGSe solar cells, detailed numerical simulations of cross section EBIC profiles for varying electron beam and solar cell parameters are performed and compared to profiles obtained from an analytical description. Especially the effects of high injection conditions are considered. Even though the collection function of the solar cell is not independent of the generation function of the electron beam, the local electron diffusion length in CIGSe can still be extracted. Grain specific values ranging from (480±70) nm to (2.3±0.2) μm are determined for a CuInSe{sub 2} absorber layer and a value of (2.8±0.3) μm for CIGSe with a Ga-content of 0.3. There are several models discussed in literature to explain generation dependent charge carrier transport, all assuming a high acceptor density either located in the CIGSe layer close to the CIGSe/CdS interface (p{sup +} layer), within the CdS layer or at the CdS/ZnO interface. In all models, a change in charge carrier collection properties is caused by a generation dependent occupation probability of the acceptor type defect state and the resulting potential distribution throughout the device. Numerical simulations of EBIC and IV data are performed with parameters according to these models. The model that explains the experimental data best is that of a p{sup +} layer at the CIGSe/CdS interface and acceptor type defect states at the CdS/ZnO interface

  10. Pre-breakdown processes in a dielectric fluid in inhomogeneous pulsed electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Shneider, Mikhail N., E-mail: m.n.shneider@gmail.com [Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544 (United States); Pekker, Mikhail [MMSolution, 6808 Walker Street, Philadelphia, Pennsylvania 19135 (United States)

    2015-06-14

    We consider the development of pre-breakdown cavitation nanopores appearing in the dielectric fluid under the influence of the electrostrictive stresses in the inhomogeneous pulsed electric field. It is shown that three characteristic regions can be distinguished near the needle electrode. In the first region, where the electric field gradient is greatest, the cavitation nanopores, occurring during the voltage nanosecond pulse, may grow to the size at which an electron accelerated by the field inside the pores can acquire enough energy for excitation and ionization of the liquid on the opposite pore wall, i.e., the breakdown conditions are satisfied. In the second region, the negative pressure caused by the electrostriction is large enough for the cavitation initiation (which can be registered by optical methods), but, during the voltage pulse, the pores do not reach the size at which the potential difference across their borders becomes sufficient for ionization or excitation of water molecules. And, in the third, the development of cavitation is impossible, due to an insufficient level of the negative pressure: in this area, the spontaneously occurring micropores do not grow and collapse under the influence of surface tension forces. This paper discusses the expansion dynamics of the cavitation pores and their most probable shape.

  11. Pre-breakdown processes in a dielectric fluid in inhomogeneous pulsed electric fields

    Science.gov (United States)

    Shneider, Mikhail N.; Pekker, Mikhail

    2015-06-01

    We consider the development of pre-breakdown cavitation nanopores appearing in the dielectric fluid under the influence of the electrostrictive stresses in the inhomogeneous pulsed electric field. It is shown that three characteristic regions can be distinguished near the needle electrode. In the first region, where the electric field gradient is greatest, the cavitation nanopores, occurring during the voltage nanosecond pulse, may grow to the size at which an electron accelerated by the field inside the pores can acquire enough energy for excitation and ionization of the liquid on the opposite pore wall, i.e., the breakdown conditions are satisfied. In the second region, the negative pressure caused by the electrostriction is large enough for the cavitation initiation (which can be registered by optical methods), but, during the voltage pulse, the pores do not reach the size at which the potential difference across their borders becomes sufficient for ionization or excitation of water molecules. And, in the third, the development of cavitation is impossible, due to an insufficient level of the negative pressure: in this area, the spontaneously occurring micropores do not grow and collapse under the influence of surface tension forces. This paper discusses the expansion dynamics of the cavitation pores and their most probable shape.

  12. TiO2 Thin Film UV Detectors Deposited by DC Reactive Magnetron Sputtering

    Institute of Scientific and Technical Information of China (English)

    ZHANG Li-wei; YAO Ning; ZHANG Bing-lin; FAN Zhi-qin; YANG Shi-e; LU Zhan-ling

    2004-01-01

    Crystalline TiO2 thin films were prepared by DC reactive magnetron sputtering on indium-tin oxide(ITO) thin film deposited on quartz substrate, the photoconductive UV detector on TiO2 thin films was based on a sandwich structure of C/ TiO2/ITO. The measurement of the I-V characteristics for these devices shows good ohmic contact. The photoresponse of TiO2 thin films was analyzed at different bias voltage. Voltage.

  13. Deployment of low-voltage regulator considering existing voltage control in medium-voltage distribution systems

    Directory of Open Access Journals (Sweden)

    Hiroshi Kikusato

    2016-01-01

    Full Text Available Many photovoltaic (PV systems have been installed in distribution systems. This installation complicates the maintenance of all voltages within the appropriate range in all low-voltage distribution systems (LVDSs because the trends in voltage fluctuation differ in each LVDS. The installation of a low-voltage regulator (LVR that can accordingly control the voltage in each LVDS has been studied as a solution to this problem. Voltage control in a medium-voltage distribution system must be considered to study the deployment of LVRs. In this study, we installed LVRs in the LVDSs in which the existing voltage-control scheme cannot prevent voltage deviation and performed a numerical simulation by using a distribution system model with PV to evaluate the deployment of the LVRs.

  14. High Voltage Tests in the LUX-ZEPLIN System Test

    Science.gov (United States)

    Whitis, Thomas; Lux-Zeplin Collaboration

    2016-03-01

    The LUX-ZEPLIN (LZ) project is a dark matter direct detection experiment using liquid xenon. The detector is a time projection chamber (TPC) requiring the establishment of a large electric field inside of the detector in order to drift ionization electrons. Historically, many xenon TPC designs have been unable to reach their design fields due to light production and breakdown. The LZ System Test is scaled so that with a cathode voltage of -50 kV, it will have the fields that will be seen in the LZ detector at -100 kV. It will use a fully instrumented but scaled-down version of the LZ TPC design with a vessel set and gas system designed for quick turnaround, allowing for iterative modifications to the TPC prototype and instrumentation. This talk will present results from the high voltage tests performed during the first runs of the LZ System Test.

  15. A high-voltage test for the ATLAS RPC qualification

    CERN Document Server

    Aielli, G; Cardarelli, R; Di Ciaccio, A; Di Simone, A; Liberti, B; Santonico, R

    2004-01-01

    The RPC production sequence for the ATLAS experiment includes a specific test of current absorption at the operating point, which concerns the RPC "gas volumes", namely the bare detectors not yet assembled with the read-out panels and the mechanical support structures. The test, which is carried out at the production site, consists of two phases. The gas volumes are initially conditioned with pure argon, keeping the voltage constant just above the breakdown value of about 2 kV. The final test, performed after the volumes have undergone inner surface varnishing with linseed oil, is based on the measurement of the current-voltage characteristics with the binary operating gas, C//2H//2F//4/i-C//4H//1//0 = 95/5. The results presented here concern 45% of the total foreseen production.

  16. On streak breakdown in bypass transition

    Science.gov (United States)

    Schlatter, Philipp; Brandt, Luca; de Lange, H. C.; Henningson, Dan S.

    2008-10-01

    Recent theoretical, numerical, and experimental investigations performed at the Department of Mechanics, KTH Stockholm, and the Department of Mechanical Engineering, Eindhoven University of Technology, are reviewed, and new material is presented to clarify the role of the boundary-layer streaks and their instability with respect to turbulent breakdown in bypass transition in a boundary layer subject to free-stream turbulence. The importance of the streak secondary-instability process for the generation of turbulent spots is clearly shown. The secondary instability manifests itself as a growing wave packet located on the low-speed streak, increasing in amplitude as it is dispersing in the streamwise direction. In particular, qualitative and quantitative data pertaining to temporal sinuous secondary instability of a steady streak, impulse responses both on a parallel and a spatially developing streak, a model problem of bypass transition, and full simulations and experiments of bypass transition itself are collected and compared. In all the flow cases considered, similar characteristics in terms of not only growth rates, group velocity, and wavelengths but also three-dimensional visualizations of the streak breakdown have been found. The wavelength of the instability is about an order of magnitude larger than the local boundary-layer displacement thickness δ∗, the group velocity about 0.8 of the free-stream velocity U∞, and the growth rate on the order of a few percent of U∞/δ∗. The characteristic structures at the breakdown are quasistreamwise vortices, located on the flanks of the low-speed region arranged in a staggered pattern.

  17. Secondary threshold amplitudes for sinuous streak breakdown

    Science.gov (United States)

    Cossu, Carlo; Brandt, Luca; Bagheri, Shervin; Henningson, Dan S.

    2011-07-01

    The nonlinear stability of laminar sinuously bent streaks is studied for the plane Couette flow at Re = 500 in a nearly minimal box and for the Blasius boundary layer at Reδ*=700. The initial perturbations are nonlinearly saturated streamwise streaks of amplitude AU perturbed with sinuous perturbations of amplitude AW. The local boundary of the basin of attraction of the linearly stable laminar flow is computed by bisection and projected in the AU - AW plane providing a well defined critical curve. Different streak transition scenarios are seen to correspond to different regions of the critical curve. The modal instability of the streaks is responsible for transition for AU = 25%-27% for the considered flows, where sinuous perturbations of amplitude below AW ≈ 1%-2% are sufficient to counteract the streak viscous dissipation and induce breakdown. The critical amplitude of the sinuous perturbations increases when the streamwise streak amplitude is decreased. With secondary perturbations amplitude AW ≈ 4%, breakdown is induced on stable streamwise streaks with AU ≈ 13%, following the secondary transient growth scenario first examined by Schoppa and Hussain [J. Fluid Mech. 453, 57 (2002)]. A cross-over, where the critical amplitude of the sinuous perturbation becomes larger than the amplitude of streamwise streaks, is observed for streaks of small amplitude AU < 5%-6%. In this case, the transition is induced by an initial transient amplification of streamwise vortices, forced by the decaying sinuous mode. This is followed by the growth of the streaks and final breakdown. The shape of the critical AU - AW curve is very similar for Couette and boundary layer flows and seems to be relatively insensitive to the nature of the edge states on the basin boundary. The shape of this critical curve indicates that the stability of streamwise streaks should always be assessed in terms of both the streak amplitude and the amplitude of spanwise velocity perturbations.

  18. Nanolaminates: increasing dielectric breakdown strength of composites.

    Science.gov (United States)

    Fillery, Scott P; Koerner, Hilmar; Drummy, Lawrence; Dunkerley, Erik; Durstock, Michael F; Schmidt, Daniel F; Vaia, Richard A

    2012-03-01

    Processable, low-cost, high-performance hybrid dielectrics are enablers for a vast array of green technologies, including high-temperature electrical insulation and pulsed power capacitors for all-electric transportation vehicles. Maximizing the dielectric breakdown field (E(BD)), in conjunction with minimization of leakage current, directly impacts system performance because of the field's quadratic relationship with electrostatic energy storage density. On the basis of the extreme internal interfacial area and ultrafine morphology, polymer-inorganic nanocomposites (PNCs) have demonstrated modest increases in E(BD) at very low inorganic loadings, but because of insufficient control of the hierarchal morphology of the blend, have yielded a precipitous decline in E(BD) at intermediate and high inorganic volume fractions. Here in, we demonstrate that E(BD) can be increased up to these intermediate inorganic volume fractions by creating uniform one-dimensional nanocomposites (nanolaminates) rather than blends of spherical inorganic nanoparticles and polymers. Free standing nanolaminates of highly aligned and dispersed montmorillonite in polyvinyl butyral exhibited enhancements in E(BD) up to 30 vol % inorganic (70 wt % organically modified montmorillonite). These relative enhancements extend up to five times the inorganic fraction observed for random nanoparticle dispersions, and are anywhere from two to four times greater than observed at comparable volume fraction of nanoparticles. The breakdown characteristics of this model system suggested a trade-off between increased path tortuosity and polymer-deficient structural defects. This implies that an idealized PNC morphology to retard the breakdown cascade perpendicular to the electrodes will occur at intermediate volume fractions and resemble a discotic nematic phase where highly aligned, high-aspect ratio nanometer thick plates are uniformly surrounded by nanoscopic regions of polymer.

  19. Analyzing of Dynamic Voltage Restorer in Series Compensation Voltage

    Directory of Open Access Journals (Sweden)

    Naser Parhizgar

    2012-02-01

    Full Text Available The Dynamic Voltage Restorer (DVR is a series-connected compensator to generate a controllable voltage to against the short-term voltage disturbances. The technique of DVR is an effective and cost competitive approach to improve voltage quality at the load side. This study presents a single-phase and threephase DVR system with reduced switch-count topology to protect the sensitive load against abnormal voltage conditions. Most basic function, the DVR configuration consist of a two level Voltage Source Converter (VSC, a dc energy storage device, a coupling transformer Connected in shunt with the ac system This study presents the application of Dynamic Voltage Restorer (DVR on power distribution systems for mitigation of voltage sag at critical loads. DVR is one of the compensating types of custom power devices. The DVR, which is based on forced-commutated Voltage Source Converter (VSC has been proved suitable for the task of compensating voltage sags/swells. Simulation results are presented to illustrate and understand the performances of DVR in supporting load voltages under voltage sags/swells conditions.

  20. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.