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Sample records for voltage breakdown limits

  1. Impact of field limiting ring technique on breakdown voltage of irradiated Si sensors

    CERN Document Server

    Bhardwaj, Ashutosh; Jha Manoj, Kr; Kumar, Ashish; Ranjan, Kirti; Shivpuri, RK; Srivastava-Ajay, K

    2003-01-01

    The very intense radiation environment of high luminosity future colliding beam experiments (like LHC) makes radiation hardness the most important issue for Si detectors. One of the central issues concerning all LHC experiments is the breakdown performance of these detectors. The major macroscopic effect of radiation damage in determining the viability of long-term operation of Si sensors is the change in effective charge carrier concentration (N //e//f//f), leading to type-inversion. Floating field limiting guard rings have been established as means of improving the breakdown performance of Si detectors. In this work the usefulness of the guard rings in improving the breakdown performance of detectors after type-inversion has been studied. Simulations are carried out to study the effect of change in N//e//f//f on the breakdown performance of optimized guard ring structure using two dimensional device simulation program, TMA- MEDICI. Detailed calculations using Hamburg Model have allowed the parameterization ...

  2. Impact of field limiting ring technique on breakdown voltage of irradiated Si sensors

    CERN Document Server

    Bhardwaj, A; Namrata, S; Chatterji, S; Srivastava-Ajay, K; Kumar, A; Jha, Manoj Kumar; Shivpuri, R K

    2004-01-01

    The very intense radiation environment of high luminosity future colliding beam experiments (like LHC) makes radiation hardness the most important issue for Si detectors. One of the central issues concerning all LHC experiments is the breakdown performance of these detectors. The major macroscopic effect of radiation damage in determining the viability of long-term operation of Si sensors is the change in effective charge carrier concentration (N/sub eff/), leading to type-inversion. Floating field limiting guard rings have been established as means of improving the breakdown performance of Si detectors. In this work the usefulness of the guard rings in improving the breakdown performance of detectors after type-inversion has been studied. Simulations are carried out to study the effect of change in N/sub eff/ on the breakdown performance of optimized guard ring structure using two dimensional device simulation program, TMA- MEDICI. Detailed calculations using Hamburg Model have allowed the parameterization o...

  3. Breakdown voltage of metal-oxide resistors in liquid argon

    CERN Document Server

    Bagby, L F; James, C C; Jones, B J P; Jostlein, H; Lockwitz, S; Naples, D; Raaf, J L; Rameika, R; Schukraft, A; Strauss, T; Weber, M S; Wolbers, S A

    2014-01-01

    We characterized a sample of metal-oxide resistors and measured their breakdown voltage in liquid argon by applying high voltage (HV) pulses over a 3 second period to simulate the electric breakdown in a HV-divider chain. All resistors had higher breakdown voltages in liquid argon than their vendor ratings in air at room temperature. Failure modes range from full destruction to coating damage. In cases where breakdown was not catastrophic, subsequent breakdown voltages were lower in subsequent measuring runs. One resistor type withstands 131\\,kV pulses, the limit of the test setup.

  4. Vacuum breakdown limit and quantum efficiency obtained for various technical metals using dc and pulsed voltage sources

    CERN Document Server

    Le Pimpec, F; Paraliev, M; Ganter, R; Hauri, C; Ivkovic, S; 10.1116/1.3478300

    2010-01-01

    For the SwissFEL project, an advanced high gradient low emittance gun is under development. Reliable operation with an electric field, preferably above 125 MV/m at a 4 mm gap, in the presence of an UV laser beam, has to be achieved in a diode configuration in order to minimize the emittance dilution due to space charge effects. In the first phase, a DC breakdown test stand was used to test different metals with different preparation methods at voltages up to 100 kV. In addition high gradient stability tests were also carried out over several days in order to prove reliable spark-free operation with a minimum dark current. In the second phase, electrodes with selected materials were installed in the 250 ns FWHM, 500 kV electron gun and tested for high gradient breakdown and for quantum efficiency using an ultra-violet laser.

  5. Breakdown voltage of metal-oxide resistors in liquid argon

    Energy Technology Data Exchange (ETDEWEB)

    Bagby, L. F. [Fermilab; Gollapinni, S. [Kansas State U.; James, C. C. [Fermilab; Jones, B. J.P. [MIT; Jostlein, H. [Fermilab; Lockwitz, S. [Fermilab; Naples, D. [Pittsburgh U.; Raaf, J. L. [Fermilab; Rameika, R. [Fermilab; Schukraft, A. [Fermilab; Strauss, T. [Bern U., LHEP; Weber, M. S. [Bern U., LHEP; Wolbers, S. A. [Fermilab

    2014-11-07

    We characterized a sample of metal-oxide resistors and measured their breakdown voltage in liquid argon by applying high voltage (HV) pulses over a 3 second period. This test mimics the situation in a HV-divider chain when a breakdown occurs and the voltage across resistors rapidly rise from the static value to much higher values. All resistors had higher breakdown voltages in liquid argon than their vendor ratings in air at room temperature. Failure modes range from full destruction to coating damage. In cases where breakdown was not catastrophic, subsequent breakdown voltages were lower in subsequent measuring runs. One resistor type withstands 131 kV pulses, the limit of the test setup.

  6. Design and experiment of 4H-SiC JBS diodes achieving a near-theoretical breakdown voltage with non-uniform floating limiting rings terminal

    Science.gov (United States)

    Yuan, Hao; Song, Qingwen; Tang, Xiaoyan; Zhang, Yimeng; Zhang, Yimen; Zhang, Yuming

    2016-09-01

    In this paper, a 4H-SiC Junction Barrier Schottky diode (JBS) with non-uniform floating limiting rings (FLRs) has been investigated and fabricated using n type 4H-SiC epitaxial layer with thickness of 31 μm and doping concentration of 3.3 × 1015 cm-3. According to the simulated results, the key parameters of a FLRs design to achieve a high voltage are the minimum space between two adjacent doped rings, spacing growth step and number of rings. The experimental results also show a great agreement with simulated results. Meanwhile, a near-ideal breakdown voltage of 3.7 kV was achieved, which yield around 95% of the parallel-plane breakdown voltage. The forward characteristics show that the fabricated JBS diodes have a forward current density of 210 A/cm2 at 3 V and a specific on-resistance (Rsp-on) of 7.58 mΩ cm2. Different FLRs parameters have no effect on the forward device performance.

  7. High Voltage Water Breakdown Studies

    Science.gov (United States)

    1998-01-01

    E. Zein Eldine, and R. Hawley, "Influence of electrode coatings on the breakdown strength of transformer oil ," Nature, Vol. 202, pp. 687-688, 1964...longer needed . Do not return to sender. PLEASE NOTIFY THE DEFENSE SPECIAL WEAPONS AGENCY, ATTN: CSTI, 6801TELEGRAPH ROAD, ALEXANDRIA, VA 22310-3398, IF...reviewing instructions, searching existing data sources, gathering and maintaining the data needed , and completing and reviewing the collection of

  8. An investigation of breakdown voltage in AMTECs

    Science.gov (United States)

    Momozaki, Yoichi; El-Genk, Mohamed S.

    2002-01-01

    Experiments are conducted to investigate the DC electrical breakdown voltage in cesium vapor between two planner molybdenum electrodes, 1.6 cm in diameter, separated by a 0.5 mm gap, and relate the results to the potential electrical breakdown on the cathode side of Alkali Metal Thermal-to-Electric Converters (AMTECs). In the first set of experiments, in which the electrodes are kept at 560 and 650 K, while varying the cesium pressure from 0.71 to 29 Pa, when the cooler electrode is positively biased, breakdown occurs at ~500 V, but at 700 V when the cooler electrode is negatively biased. In the second set of experiments, in which the electrodes are held at 625 and 1100 K and the cesium pressure varied from 1.7 to 235 Pa, when the cooler electrode is positively biased, breakdown voltage is <4 V, but in excess of 400 V when the cooler electrode is negatively biased. Since the first ionization potential and the ionization rate constant of cesium are lower and higher, respectively, than for the sodium (5.14 V) and potassium (4.34 V) vapors in AMTECs, the DC electrical breakdown voltage in an AMTEC is expected to be higher than measured in this work for cesium vapor. .

  9. Alternating current breakdown voltage of ice electret

    Science.gov (United States)

    Oshika, Y.; Tsuchiya, Y.; Okumura, T.; Muramoto, Y.

    2017-09-01

    Ice has low environmental impact. Our research objectives are to study the availability of ice as a dielectric insulating material at cryogenic temperatures. We focus on ferroelectric ice (iceXI) at cryogenic temperatures. The properties of iceXI, including its formation, are not clear. We attempted to obtain the polarized ice that was similar to iceXI under the applied voltage and cooling to 77 K. The polarized ice have a wide range of engineering applications as electronic materials at cryogenic temperatures. This polarized ice is called ice electret. The structural difference between ice electret and normal ice is only the positions of protons. The effects of the proton arrangement on the breakdown voltage of ice electret were shown because electrical properties are influenced by the structure of ice. We observed an alternating current (ac) breakdown voltage of ice electret and normal ice at 77 K. The mean and minimum ac breakdown voltage values of ice electret were higher than those of normal ice. We considered that the electrically weak part of the normal ice was improved by applied a direct electric field.

  10. High-voltage breakdown studies on Si microstrip detectors

    CERN Document Server

    Albergo, S; Azzi, P; Babucci, E; Bacchetta, N; Bader, A J; Bagliesi, G; Basti, A; Biggeri, U; Bilei, G M; Bisello, D; Boemi, D; Bosi, F; Borrello, L; Bozzi, C; Braibant, S; Breuker, Horst; Bruzzi, Mara; Buffini, A; Busoni, S; Calefato, G; Candelori, A; Caner, A; Castaldi, R; Castro, A; Catacchini, E; Checcucci, B; Ciampolini, P; Civinini, C; Creanza, D; D'Alessandro, R; Da Rold, M; Demaria, N; De Palma, M; Dell'Orso, R; Marina, R D; Dutta, S; Eklund, C; Peisert, Anna; Feld, L; Fiore, L; Focardi, E; French, M; Freudenreich, Klaus; Fürtjes, A; Giassi, A; Giorgi, M A; Giraldo, A; Glessing, B; Gu, W H; Hall, G; Hammarström, R; Hebbeker, T; Hrubec, Josef; Muhtinen, M; Kaminski, A; Karimäki, V; Saint-Koenig, M; Krammer, Manfred; Lariccia, P; Lenzi, M; Loreti, M; Lübelsmeyer, K; Lustermann, W; Mättig, P; Maggi, G; Mannelli, M; Mantovani, G C; Marchioro, A; Mariotti, C; Martignon, G; McEvoy, B; Meschini, M; Messineo, A; My, S; Paccagnella, A; Palla, Fabrizio; Pandoulas, D; Papi, A; Parrini, G; Passeri, D; Pieri, M; Piperov, S; Potenza, R; Radicci, V; Raffaelli, F; Raymond, M; Santocchia, A; Schmitt, B; Selvaggi, G; Servoli, L; Sguazzoni, G; Siedling, R; Silvestris, L; Skog, K; Starodumov, Andrei; Stavitski, I; Stefanini, G; Tempesta, P; Tonelli, G; Tricomi, A; Tuuva, T; Vannini, C; Verdini, P G; Viertel, Gert M; Zie, Z; Li Ya Hong; Watts, S; Wittmer, B

    1999-01-01

    The breakdown performance of CMS barrel module prototype detectors and test devices with single and multi-guard structures were studied before and after neutron irradiation up to 2-10/sup 14/ 1 MeV equivalent neutrons. Before irradiation avalanche breakdown occurred at the guard ring implant edges. We measured 100-300 V higher breakdown voltage values for the devices with multi-guard than for devices with single-guard ring, After irradiation and type inversion the breakdown was smoother than before irradiation and the breakdown voltage value increased to 500-600 V for most of the devices. (9 refs).

  11. Modeling of a breakdown voltage in microdischarges

    Directory of Open Access Journals (Sweden)

    Đorđević Ivana

    2009-01-01

    Full Text Available Non-equilibrium plasmas have been used as one of the principal technologies for development of microelectronics and they are the basis for the development of new generations of nano-electronics devices required for 65 and 40 nm technologies. Microdischarges recently have become more common in everyday life. Technology of plasma etching has enabled us to develop such discharges and the field of microdischarges has grown into the most interesting field of the physics of collisional non-equilibrium plasmas. Recently, an effort to fabricate microplasma sources that can be integrated with other MEMS devices to form larger Microsystems has been made. Plasma-based microsystems can find application in bio-microelectro- mechanical system (bio-MEMS sterilization, small-scale materials processing and microchemical analysis systems. However, integrability requires not only a size reduction, but also an understanding of the physics governing the new small-scale discharges. In this paper, we have performed modeling of a breakdown voltage by using Particle-in-Cell/Monte Carlo collision (PIC/MCC code taking into account the secondary electron emission due to a high field.

  12. Breakdown voltage of discrete capacitors under single-pulse conditions

    Science.gov (United States)

    Domingos, H.; Scaturro, J.; Hayes, L.

    1981-01-01

    For electrostatic capacitors the breakdown voltage is inherently related to the properties of the dielectric, with the important parameters being the dielectric field strength which is related to the dielectric constant and the dielectric thickness. These are not necessarily related to the capacitance value and the rated voltage, but generally the larger values of capacitance have lower breakdown voltages. Foil and wet slug electrolytics can withstand conduction currents pulses without apparent damage (in either direction for foil types). For solid tantalums, damage occurs whenever the capacitor charges to the forming voltage.

  13. Electrical conduction mechanism in bulk ceramic insulators at high voltages until dielectric breakdown

    Science.gov (United States)

    Neusel, C.; Jelitto, H.; Schneider, G. A.

    2015-04-01

    In order to develop and verify a dielectric breakdown model for bulk insulators thicker than 100 μm, the knowledge of the dominating conduction mechanism at high electric fields, or respectively voltages, is necessary. The dielectric breakdown is the electrical failure of an insulator. In some existing breakdown models, ohmic conduction is assumed as dominating conduction mechanism. For verification, the dominating dc conduction mechanism of bulk insulators at room temperature was investigated by applying high voltages up to 70 kV to the insulator until dielectric breakdown occurs. Four conduction models, namely, ohmic, space charge limited, Schottky, and Poole-Frenkel conduction, were employed to identify the dominating conduction mechanism. Comparing the calculated permittivities from the Schottky and Poole-Frenkel coefficients with experimentally measured permittivity, Schottky and Poole-Frenkel conduction can be excluded as dominating conduction mechanism. Based on the current density voltage characteristics (J-V-curve) and the thickness-dependence of the current density, space charge limited conduction (SCLC) was identified to be the dominating conduction mechanism at high voltages leading to dielectric breakdown. As a consequence, breakdown models based on ohmic conduction are not appropriate to explain the breakdown of the investigated bulk insulators. Furthermore, the electrical failure of the examined bulk insulators can only be described correctly by a breakdown model which includes SCLC as conduction mechanism.

  14. Study of the breakdown voltage of SiPMs

    CERN Document Server

    Chmill, V; Klanner, R; Nitschke, M; Schwandt, J

    2016-01-01

    The breakdown behaviour of SiPMs (Silicon PhotoMultiplier) with pixel sizes of 15$\\times $15, 25$\\times $25, 50$\\times $50, and 100$\\times $100 $\\mu $m$^2$, manufactured by KETEK, has been investigated. From the current-voltage characteristics measured with and without illumination by LED light of 470 nm wavelength, the current-breakdown voltage, $V_I$, and from linear fits of the voltage dependence of the SiPM gain, measured by recording pulse-area spectra, the gain-breakdown voltage, $V_G$, have been obtained. The voltage dependence of the Geiger-breakdown probability was determined from the fraction of zero photoelectron events with LED illumination. By comparing the results to a model calculation, the photodetection-breakdown voltage, $V_{PD}$, has been determined. Within experimental uncertainties, $V_I$ and $V_{PD}$ are equal and independent of pixel size. For $V_G$, a dependence on pixel size is observed. The difference $V_I - V_G$ is about 1 V for the SiPM with 15 $\\mu $m pixels, decreases with pixel ...

  15. Study of the breakdown voltage of SiPMs

    Science.gov (United States)

    Chmill, V.; Garutti, E.; Klanner, R.; Nitschke, M.; Schwandt, J.

    2017-02-01

    The breakdown behaviour of SiPMs (Silicon PhotoMultiplier) with pixel sizes of 15 × 15 , 25 × 25 , 50 × 50, and 100 × 100 μm2, manufactured by KETEK, has been investigated. From the current-voltage characteristics measured with and without illumination by LED light of 470 nm wavelength, the current-breakdown voltage, VI, and from linear fits of the voltage dependence of the SiPM gain, measured by recording pulse-area spectra, the gain-breakdown voltage, VG, have been obtained. The voltage dependence of the Geiger-breakdown probability was determined from the fraction of zero photoelectron events with LED illumination. By comparing the results to a model calculation, the photodetection-breakdown voltage, VPD, has been determined. Within experimental uncertainties, VI and VPD are equal and independent of pixel size. For VG, a dependence on pixel size is observed. The difference VI -VG is about 1 V for the SiPM with 15 μm pixels, decreases with pixel size and is compatible with zero for the SiPM with 100 μm pixels.

  16. Precise method for determining avalanche breakdown voltage of silicon photomultipliers

    Science.gov (United States)

    Chirikov-Zorin, I.

    2017-07-01

    A physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDErel) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDErel value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts.

  17. High Voltage Breakdown Levels in Various EPC Potting Materials

    Science.gov (United States)

    Komm, David S.

    2006-01-01

    This viewgraph presentation reviews exploration activities at JPL into various potting materials. Since high power space-borne microwave transmitters invariably use a vacuum tube as a final power amplifier, and this tube requires high electrode voltages for operation. The associated high voltage insulation typically represents a significant fraction of the mass of the transmitter. Since mass is always a premium resource on board spacecraft, we have been investigating materials with the potential to reduce the mass required for our applications here at JPL. This paper describes electrical breakdown results obtained with various potting materials. Conathane EN-11 (polyurethane) is the traditional HVPS encapsulant at JPL, but due to temperature limitations and durability issues it was deemed inappropriate for the particular application (i.e., CloudSat radar). The choices for the best available materials were epoxies, or silicones. Epoxies are too rigid, and were deemed inadvisable. Two silicones were further investigated (i.e.,ASTM E595- 93e2: GE RTV566(R) and Dow Corning 93-500X(R), another compound was considered (i.e., DC material, Sylgard 184(R)). "Loading" (adding filler materials) the potting compound will frequently alter the final material properties. Powdered alumina and borosilicate glass known as "microballoons" were investigated as possible loading materials. The testing of the materials is described. Each of the two loading materials offers advantages and disadvantages. The advantages and disadvantages are described.

  18. High Voltage Coaxial Vacuum Gap Breakdown for Pulsed Power Liners

    Science.gov (United States)

    Cordaro, Samuel; Bott-Suzuki, Simon; Caballero Bendixsen, Luis Sebastian

    2015-11-01

    The dynamics of Magnetized Liner Inertial Fusion (MagLIF)1, are presently under detailed study at Sandia National Laboratories. Alongside this, a comprehensive analysis of the influence of the specific liner design geometry in the MagLIF system on liner initiation is underway in the academic community. Recent work at UC San Diego utilizes a high voltage pulsed system (25kV, 150ns) to analyze the vacuum breakdown stage of liner implosion. Such experimental analyses are geared towards determining how the azimuthal symmetry of coaxial gap breakdown affect plasma initiation within the liner. The final aim of the experimental analysis is to assess to what scale symmetry remains important at high (MV) voltages. An analysis of the above will utilize plasma self-emission via optical MCP, current measurements, voltage measurements near the gap, exact location of breakdown via 2D b-dot probe triangulation, as well as measuring the evolution of the B-field along the length of the liner via b-dot array. Results will be discussed along with analytical calculations of breakdown mechanisms

  19. High-voltage atmospheric breakdown across intervening rutile dielectrics.

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, Kenneth Martin; Simpson, Sean; Coats, Rebecca Sue; Jorgenson, Roy Eberhardt; Hjalmarson, Harold Paul; Pasik, Michael Francis

    2013-09-01

    This report documents work conducted in FY13 on electrical discharge experiments performed to develop predictive computational models of the fundamental processes of surface breakdown in the vicinity of high-permittivity material interfaces. Further, experiments were conducted to determine if free carrier electrons could be excited into the conduction band thus lowering the effective breakdown voltage when UV photons (4.66 eV) from a high energy pulsed laser were incident on the rutile sample. This report documents the numerical approach, the experimental setup, and summarizes the data and simulations. Lastly, it describes the path forward and challenges that must be overcome in order to improve future experiments for characterizing the breakdown behavior for rutile.

  20. Modeling of High-voltage Breakdown in Helium

    Science.gov (United States)

    Xu, Liang; Khrabrov, Alexander; Kaganovich, Igor; Sommerer, Timothy

    2016-09-01

    We investigate the breakdown in extremely high reduced electric fields (E/N) between parallel-plate electrodes in helium. The left branch of the Paschen curve in the voltage range of 20-350kV and inter-electrode gap range of 0.5-3.5cm is studied analytically and with Monte-Carlo/PIC simulations. The model incorporates electron, ion, and fast neutral species whose energy-dependent anisotropic scattering, as well as backscattering at the electrodes, is carefully taken into account. Our model demonstrates that (1) anisotropic scattering is indispensable for producing reliable results at such high voltage and (2) due to the heavy species backscattered at cathode, breakdown can occur even without electron- and ion-induced ionization of the background gas. Fast atoms dominate in the breakdown process more and more as the applied voltage is increased, due to their increasing ionization cross-section and to the copious flux of energetic fast atoms generated in charge-exchange collisions.

  1. Calculation of Spark Breakdown or Corona Starting Voltages in Nonuniform Fields

    DEFF Research Database (Denmark)

    Pedersen, A.

    1967-01-01

    The processes leading to a spark breakdown or corona discharge are discussed very briefly. A quantitative breakdown criterion for use in high-voltage design is derived by which spark breakdown or corona starting voltages in nonuniform fields can be calculated. The criterion is applied to the sphere...

  2. Suppression of Voltage Breakdown in High-Gradient RF Structures

    Science.gov (United States)

    Peter, W.; Garate, E.; Shiloh, J.; Mako, F.; Silberglitt, R.

    1996-11-01

    Experimental results of a promising concept for raising the breakdown limit in accelerating structures by the use of semiconducting or insulating cavity coatings are presented. Extensive experimental measurements of various coatings on OFHC Cu electrodes in the dc regime show that electrical breakdown can be increased from a value of 40 MV/m for bare Copper to 115 MV/m for a specially-coated Copper electrode. TiN-coated electrodes at use in the Stanford Linear Accelerator Center (SLAC) were measured to undergo breakdown at 50 MV/m. Dark current levels from our special coatings are over six orders of magnitude less than TiN-coated Copper even after arcing. These coatings can decrease the secondary emission levels, are mechanically stable, are not sensitive to radiation, do not affect the cavity Q, and will not poison the cathode. Hot-tests of coated X-band cavities will be performed in collaboration with SLAC.

  3. A novel high-voltage device structure with an N+ ring in substrate and the breakdown voltage model

    Institute of Scientific and Technical Information of China (English)

    Li Qi; Zhu Jinluan; Wang Weidong; Yue Hongwei; Jin Liangnian

    2011-01-01

    A novel high-voltage device structure with a floating heavily doped N+ ring embedded in the substrate is reported,which is called FR LDMOS.When the N+ ring is introduced in the device substrate,the electric field peak of the main junction is reduced due to the transfer of the voltage from the main junction to the N+ ring junction,and the vertical breakdown characteristic is improved significantly.Based on the Poisson equation of cylindrical coordinates,a breakdown voltage model is developed.The numerical results indicate that the breakdown voltage of the proposed device is increased by 56% in comparison to conventional LDMOS.

  4. Altitude Correction for Breakdown Voltages of Long Air-Gaps

    Institute of Scientific and Technical Information of China (English)

    Wang Xuan; Li Yunge; Cao Xiaolong; Su Zhiyi; Liu Ying

    2006-01-01

    The breakdown voltage of long air-gaps in high-voltage transmission systems depends on not only the waveform of the applied voltage, but also the atmospheric conditions. Based on the results of the research project on the minimum air clearance for 800-Kv HVDC substations at high altitudes, and also on the monthly and yearly statistics of the atmospheric data of last ten years and the altitude correction of the atmospheric data of last ten years, the altitude correction of the air-gaps for the 800-Kv DC system under plan, 500-Kv AC system to be built, and 1000-Kv AC system under plan in the Inner Mongolia Plateau and the Yungui Plateau in China were studied with parameter G method. Correction factors for switching and lightning impulses were calculated and then compared with those achieved according to IEC 71. It is shown that IEC 71 is appropriate for damp regions, and correction factors differ between plateau regions in China because of different atmospheric conditions.

  5. A model based DC analysis of SiPM breakdown voltages

    CERN Document Server

    Nagy, Ferenc; Kalinka, Gabor; Molnar, Jozsef

    2016-01-01

    A new method to determine the breakdown voltage of SiPMs is presented. It is backed up by a DC model which describes the breakdown phenomenon by distinct avalanche turn-on ($V_{01}$) and turn off ($V_{10}$) voltages. It is shown that $V_{01}$ is related to the 'breakdown voltage' that previous DC methods derive from simple reverse current-voltage measurements, while $V_{10}$ is the 'real' breakdown voltage commonly obtained from complex gain-voltage measurements. The proposed method reveals how the microcell population distributes around $V_{01}$ and $V_{10}$. It is found that if this distribution is assumed to be normal, then both voltages and even their standard deviation can readily be extracted from current-voltage curves. Measurements are in good agreement with the theoretical model.

  6. Study of predicting breakdown voltage of stator insulation in generator based on BP neural network

    Institute of Scientific and Technical Information of China (English)

    Jiang Yuao; Zhang Aide; Liu Libing; Du Yu; Gao Naikui; Peng Zongren

    2007-01-01

    The breakdown voltage plays an important role in evaluating residual life of stator insulation in generator. In this paper, we discussed BP neural network that was used to predict the breakdown voltage of stator insulation in generator of 300 MW/18 kV. At first the neural network has been trained by the samples that include the varieties of dielectric loss factor tanδ, the partial discharge parameters and breakdown voltage. Then we tried to predict the breakdown voltage of samples and stator insulations subjected to multi-stress aging by the trained neural network. We found that it's feasible and accurate to predict the voltage. This method can be applied to predict breakdown voltage of other generators which have the same insulation structure and material.

  7. Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

    Directory of Open Access Journals (Sweden)

    Xiao-Yu Tang

    2015-01-01

    Full Text Available With the rapid development of the power integrated circuit technology, polysilicon resistors have been widely used not only in traditional CMOS circuits, but also in the high voltage applications. However, there have been few detailed reports about the polysilicon resistors’ characteristics, like voltage and temperature coefficients and breakdown behaviors which are critical parameters of high voltage applications. In this study, we experimentally find that the resistance of the polysilicon resistor with a relatively low doping concentration shows negative voltage and temperature coefficients, while that of the polysilicon resistor with a high doping concentration has positive voltage and temperature coefficients. Moreover, from the experimental results of breakdown voltages of the polysilicon resistors, it could be deduced that the breakdown of polysilicon resistors is thermally rather than electrically induced. We also proposed to add an N-type well underneath the oxide to increase the breakdown voltage in the vertical direction when the substrate is P-type doped.

  8. 30 CFR 18.47 - Voltage limitation.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Voltage limitation. 18.47 Section 18.47 Mineral... § 18.47 Voltage limitation. (a) A tool or switch held in the operator's hand or supported against his... particular voltage(s) are provided in the design and construction of the equipment, its wiring,...

  9. DC high voltage to drive helium plasma jet comprised of repetitive streamer breakdowns

    CERN Document Server

    Wang, Xingxing

    2016-01-01

    This paper demonstrates and studies helium atmospheric pressure plasma jet comprised of series of repetitive streamer breakdowns, which is driven by a pure DC high voltage (auto-oscillations). Repetition frequency of the breakdowns is governed by the geometry of discharge electrodes/surroundings and gas flow rate. Each next streamer is initiated when the electric field on the anode tip recovers after the previous breakdown and reaches the breakdown threshold value of about 2.5 kV/cm. Repetition frequency of the streamer breakdowns excited using this principle can be simply tuned by reconfiguring the discharge electrode geometry. This custom-designed type of the helium plasma jet, which operates on the DC high voltage and is comprised of the series of the repetitive streamer breakdowns at frequency about 13 kHz, is demonstrated.

  10. Ionizing potential waves and high-voltage breakdown streamers.

    Science.gov (United States)

    Albright, N. W.; Tidman, D. A.

    1972-01-01

    The structure of ionizing potential waves driven by a strong electric field in a dense gas is discussed. Negative breakdown waves are found to propagate with a velocity proportional to the electric field normal to the wavefront. This causes a curved ionizing potential wavefront to focus down into a filamentary structure, and may provide the reason why breakdown in dense gases propagates in the form of a narrow leader streamer instead of a broad wavefront.

  11. Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my [Centre of Innovative Nanostructures and Nanodevices, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750 Tronoh, Perak (Malaysia)

    2014-03-24

    Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

  12. Influence of the plasma on ICRF antenna voltage limits

    Science.gov (United States)

    Bobkov, V.; Noterdaeme, J.-M.; Wesner, F.; Wilhelm, R.; ASDEX Upgrade Team

    2003-03-01

    An ion cyclotron range of frequencies (ICRF) probe [F.W. Baity, G.C. Barber, V. Bobkov, R.H. Goulding, J.-M. Noterdaeme, D.W. Swain, in: 14th Topical Conference on Radiofrequency Power in Plasmas, Oxnard 2001, AIP Conference Proceedings 595, AIP, Melville, NY, 2001, p. 510] has been implemented to study voltage stand-off of the ICRF antennas on ASDEX Upgrade (AUG). The probe was operated at first in a test stand where features of high RF voltage operation in vacuum and plasma created by an ion source of the Hall type [Plasma Sources Sci. Technol. 8 (1999) R1] were studied. Vacuum arcs as well as ignition of high voltage glow discharge are candidate processes to explain voltage limits of the ICRF antennas. The setup on AUG was used to expose high RF voltages in real conditions of the tokamak scrape-off layer which are faced by the ICRF antennas. It is found that high voltage breakdown on the ICRF antenna is often correlated with ELM activity. The maximal RF voltage increased from shot to shot, i.e. the conditioning effect is observed. For the good-conditioned ICRF probe it was shown experimentally that the voltage limit can be increased while the rectified current is suppressed at the same time.

  13. Investigation of pulsed voltage limiters characteristics

    Directory of Open Access Journals (Sweden)

    Karimov A. V.

    2012-06-01

    Full Text Available A new method for measuring the voltage limit is offered. It has been designed to measure high-power pulsed current of voltage limiters. The error of this method is half as much as the error of the known method of direct measurement. The investigation of dependence of power capability of single-crystal and double-crystal voltage limiters and of the pulsed operation time on pulse duration.

  14. Breakdown Voltage Research of Penning Gas Mixture in Plasma Display Panel

    Institute of Scientific and Technical Information of China (English)

    Guo Bingang; Liu Chunliang; Song Zhongxiao; Fan Yufeng; Xia Xing; Liu Liu; Fan Duowang

    2005-01-01

    Paschen law and equations, which ignore the influence of the Penning ionization on the electron ionization coefficient (α), are always used as the approximation of the breakdown voltage criterion of the Penning gas mixture in current researches of discharge characteristics of the plasma display panel (PDP). It is doubtful that whether their results match the facts. Based on the Townsend gas self-sustaining discharge condition and the chemical kinetics analysis of the Penning gas mixture discharging in PDP, the empirical equation to describe the breakdown of the Penning gas mixture is given. It is used to calculate the breakdown voltage curves of Ne-Xe/MgO and Ne-Ar/MgO in a testing macroscopic discharge cell of AC-PDP. The effective secondary electron emission coefficients (γeff) of the MgO protective layers are derived by comparing the breakdown voltage curves obtained from the empirical equation with the experimental data of breakdown voltages. In comparison with the results calculated by the Paschen law and the equation which ignore the influence of the Penning ionization on α , the results calculated by the empirical equation have better conformity with experimental data. The empirical equation characterizes the breakdown of the Penning gas mixture in PDP effectively, and gives a convenient way to study its breakdown characteristics and the secondary electron emission behaviors.

  15. Air Breakdown Behavior of Two Series Gaps for Composite Switching Impulse/Alternating Voltage

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    More and more high voltage transmission lines make use of rubber housed ZnO arresters in series with another air gap (for example, the insulator gap) as lighting protection elements. Many test results of ZnO arresters protection performance show that this insulation arrangement is suitable for practical lines according to results based on only simple impulse voltage. This paper uses a composite voltage (switching impulse voltage/alternating voltage) to determine the air breakdown behavior of the conductor-rod gap in series with the sphere gap. In the test, the switching impulse voltage is applied to the conductor while the alternating voltage is applied to the rod and one sphere and the other sphere is grounded. The results show that in some cases, the value of the U50% sparkover voltage for the conductor-rod gap with the composite voltage is nearly only half of that for just the simple impulse voltage.

  16. A breakdown voltage model for implanted resurf p-LDMOS device on n+ buried layer

    NARCIS (Netherlands)

    Zhou, Ming-Jiang; Van Calster, A.

    1994-01-01

    This paper presents an analytical expression of the breakdown voltage of a high voltage implanted RESURF p-LDMOS device which uses the n+ buried layer as an effective device substrate. In this model, the doping profile of the buried layer is considered and discussed. The implant dose for the drift r

  17. Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages

    CERN Document Server

    Kum, B H; Shin, M W; Park, J D

    1999-01-01

    This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si sub x B sub y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm sup 2 at a forward voltage of 2 V. The breakdown of the Pt. 4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

  18. Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

    Science.gov (United States)

    Dalla Betta, G.-F.; Ayllon, N.; Boscardin, M.; Hoeferkamp, M.; Mattiazzo, S.; McDuff, H.; Mendicino, R.; Povoli, M.; Seidel, S.; Sultan, D. M. S.; Zorzi, N.

    2016-09-01

    We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

  19. Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET

    Science.gov (United States)

    Daghighi, Arash; Hematian, Hadi

    2017-03-01

    In this paper, we report a diamond-shaped body contact (DSBC) for silicon-on-insulator (SOI) LDMOSFET. Several DSBC devices along with conventional body contact (CBC) structures are laid out using 0.35 μm SOI MOSFET foundry process. The DSBC device is designed using the same standard layers as in the CBC structure and the contact layout is adapted to process design rules. Experimental characterization of the CBC and DSBC devices in terms of off-state breakdown voltage (BVoff), on-state breakdown voltage (BVon), on-resistance (Ron) and device foot print showed 19% improvement in BVon compared DSBC device with that of the CBC structure. BVoff and Ron of both of the devices are identical. The device foot print is smaller in DSBC device by 11% compared with that of the CBC structure leading to enhanced "On-resistance × Area" figure of merit where smaller high voltage SOI LDMOSEFT reduces the area and cost of power integrated circuits. In order to explain BVon improvement of DSBC structures, three-dimensional (3-D) device simulation is carried out to clarify the lateral BJT action and breakdown mechanism. It is demonstrated that the number of P+ diffusions in DSBC device can be increased to improve BVon without increasing "On-resistance × Area". The on-state breakdown voltage improvement and area efficiency of the diamond-shaped body contact proposes it as a promising candidate for reliable operation of SOI LDMOSFET.

  20. Breakdown Characteristic Analysis of Paper- Oil Insulation under AC and DC Voltage

    Science.gov (United States)

    Anuar, N. F.; Jamail, N. A. M.; Rahman, R. A.; Kamarudin, M. S.

    2017-08-01

    This paper presents the study of breakdown characteristic of Kraft paper insulated with two different types of insulating fluid, which are Palm oil and Coconut oil. Palm oil and Coconut oil are chosen as the alternative fluid to the transformer oil because it has high potential and environmentally-friendly. The Segezha Kraft papers with various thicknesses (65.5 gsm, 75 gsm, 85gsm, 90 gsm) have been used in this research. High Voltage Direct Current (HVDC), High Voltage Alternating Current (HVAC) and carbon track and severity analysis is conducted to observe the sample of aging Kraft paper. These samples have been immersed using Palm oil and Coconut oil up to 90 days to observe the absorption rate. All samples started to reach saturation level at 70 days of immersion. HVDC and HVAC breakdown experiments have been done after the samples had reached the saturation level based on normal condition, immersed in Palm oil and immersed in Coconut oil. All samples immersed in liquid show different breakdown voltage reading compared to normal condition. The analysis of carbon track and severity on surface has been done using Analytical Scanning Electron Microscope (SEM) Analysis. The results of the experiment show that the sample of Kraft paper immersed in Palm oil was better than Coconut oil immersed sample. Therefore the sample condition was the main factor that determines the value of breakdown voltage test. Introduction

  1. Experimental Modelling of the Breakdown Voltage of Air Using Design of Experiments

    Directory of Open Access Journals (Sweden)

    REZOUGA, M.

    2009-02-01

    Full Text Available Many experimental and numerical studies were devoted to the electric discharge of air, and some mathematical models were proposed for the critical breakdown voltage. As this latter depends on several parameters, it is difficult to find a formula, theoretical or experimental, which considers many factors. The aim of this paper is to model the critical breakdown voltage in a "Sphere-Sphere� electrodes system by using the methodology of experimental designs. Several factors were considered, such as geometrical factors (inter-electrodes interval, diameter of the electrodes and climatic factors (temperature, humidity. Two factorial centred faces experimental designs (CCF were carried out, a first one for the geometrical factors and a second one for the climatic factors. The obtained results made it possible to propose mathematical models and to study the interactions between the various factors.

  2. Prediction of the breakdown voltage of transformer oil based on a backpropagation network

    Energy Technology Data Exchange (ETDEWEB)

    Cao Shun' an; Li Rui; Sheng Kai [Wuhan Univ., Hubei Province (China). Dept. of Water Quality Engineering

    2008-03-15

    Prediction of the breakdown voltage of transformer oil facilitates the early fault diagnosis of transformers, and provides a scientific basis for the prevention of faults in transformer oil. In this paper, based on the correlation between performance parameters of transformer oil, along with the excellent fault-tolerant ability, prominent non-linear approximation capability and self-learning capacity of backpropagation (BP) networks, a BP network with a BP algorithm and a BP network with an improved BP algorithm are developed to simulate the correlation between breakdown voltage and four relevant parameters, using the monitoring data of transformer oil. The results show that the latter algorithm gives more accurate predicted values, which proves to be of high application value. (orig.)

  3. Voltage breakdown follower avoids hard thermal constraints in a Geiger mode avalanche photodiode.

    Science.gov (United States)

    Viterbini, M; Nozzoli, S; Poli, M; Adriani, A; Nozzoli, F; Ottaviano, A; Ponzo, S

    1996-09-20

    A novel approach to single-photon detection by means of an avalanche photodiode is described and preliminary results obtained by implementation of a prototype are reported. The electronic circuit (breakdown voltage follower) avoids the use of complex temperature controls typically used with these devices, thus reducing system complexity and cost. Data obtained without any thermoregulation show the same behavior with respect to systems thermoregulated to within a few hundredths of a degree celsius.

  4. Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

    Directory of Open Access Journals (Sweden)

    Sangeeta Singh

    2016-03-01

    Full Text Available In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS to lower the breakdown voltage of conventional impact ionization MOS (IMOS and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization and source induced barrier tunneling. The silicide source offers very low parasitic resistance, the outcome of which is an increment in voltage drop across the intrinsic region for the same applied bias. This reduces operating voltage and hence, it exhibits a significant reduction in both breakdown and threshold voltage. STS-IMOS shows high immunity against hot electron damage. As a result of this the device reliability increases magnificently. The analytical model for impact ionization current (Iii is developed based on the integration of ionization integral (M. Similarly, to get Schottky tunneling current (ITun expression, Wentzel–Kramers–Brillouin (WKB approximation is employed. Analytical models for threshold voltage and subthreshold slope is optimized against Schottky barrier height (ϕB variation. The expression for the drain current is computed as a function of gate-to-drain bias via integral expression. It is validated by comparing it with the technology computer-aided design (TCAD simulation results as well. In essence, this analytical framework provides the physical background for better understanding of STS-IMOS and its performance estimation.

  5. Two dimensional triangulation of breakdown in a high voltage coaxial gap.

    Science.gov (United States)

    Cordaro, S W; Bott-Suzuki, S C; Bendixsen, L S Caballero; Atoyan, Levon; Byvank, Tom; Potter, William; Kusse, B R; Greenly, J B

    2015-07-01

    We describe a technique by which magnetic field probes are used to triangulate the exact position of breakdown in a high voltage coaxial vacuum gap. An array of three probes is placed near the plane of the gap with each probe at 90° intervals around the outer (anode) electrode. These probes measure the azimuthal component of the magnetic field and are all at the same radial distance from the cylindrical axis. Using the peak magnetic field values measured by each probe, the current carried by the breakdown channel, and Ampères law we can calculate the distance away from each probe that the breakdown occurred. These calculated distances are then used to draw three circles each centered at the centers of the corresponding magnetic probes. The common intersection of these three circles then gives the predicted azimuthal location of the center of the breakdown channel. Test results first gathered on the coaxial gap breakdown device (240 A, 25 kV, 150 ns) at the University of California San Diego and then on COBRA (1 MA, 1 MV, 100 ns) at Cornell University indicate that this technique is relatively accurate and scales between these two devices.

  6. Comparative Study of Breakdown Voltage of Mineral, Synthetic and Natural Oils and Based Mineral Oil Mixtures under AC and DC Voltages

    Directory of Open Access Journals (Sweden)

    Abderrahmane Beroual

    2017-04-01

    Full Text Available This paper deals with a comparative study of AC and DC breakdown voltages of based mineral oil mixtures with natural and synthetic esters mainly used in high voltage power transformers. The goal was to analyze the performances of oil mixtures from the dielectric withstand point of view and to predict the behavior of transformers originally filled with mineral oil and re-filled with synthetic or natural ester oils when emptied for maintenance. The study concerns mixtures based on 20%, 50%, and 80% of natural and synthetic ester oils. AC breakdown voltages were measured using a sphere-sphere electrode system according to IEC 60156 specifications; the same specification was adopted for DC measurements since there is no standard specifications for this voltage waveform. A statistical analysis of the mean values, standard deviations, and histograms of breakdown voltage data was carried out. The Normal and Weibull distribution functions were used to analyze the experimental data and the best function that the data followed was used to estimate the breakdown voltage with risk of 1%, 10%, and 50% probability. It was shown that whatever the applied voltage waveforms, ester oils always have a significantly higher breakdown voltage than mineral oil. The addition of only 20% of natural or synthetic ester oil was sufficient to considerably increase the breakdown voltage of mineral oil. The dielectric strength of such a mixture is much higher than that of mineral oil alone and can reach that of ester oils. From the point of view of dielectric strength, the mixtures constitute an option for improving the performance of mineral oil. Thus, re-filling of transformers containing up to 20% mineral oil residues with ester oils, does not present any problem; it is even advantageous when considering only the breakdown voltage. Under AC, the mixtures with natural ester always follow the behavior of vegetable oil alone. With the exception of the 20% mixture of natural

  7. Improving breakdown voltage performance of SOI power device with folded drift region

    Institute of Scientific and Technical Information of China (English)

    李琦; 李海鸥; 黄平奖; 肖功利; 杨年炯

    2016-01-01

    A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/µm with a 10 µm drift length, which increases by 200%in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V.

  8. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

    Science.gov (United States)

    Jun, Luo; Sheng-Lei, Zhao; Min-Han, Mi; Wei-Wei, Chen; Bin, Hou; Jin-Cheng, Zhang; Xiao-Hua, Ma; Yue, Hao

    2016-02-01

    The effects of gate length LG on breakdown voltage VBR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with LG = 1 μm˜ 20 μm. With the increase of LG, VBR is first increased, and then saturated at LG = 3 μm. For the HEMT with LG = 1 μm, breakdown voltage VBR is 117 V, and it can be enhanced to 148 V for the HEMT with LG = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with LG > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG = 3 μm˜20 μm, and their breakdown voltages are in a range of 140 V-156 V. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61204085).

  9. A consistent approach to estimate the breakdown voltage of high voltage electrodes under positive switching impulses

    Science.gov (United States)

    Arevalo, L.; Wu, D.; Jacobson, B.

    2013-08-01

    The main propose of this paper is to present a physical model of long air gap electrical discharges under positive switching impulses. The development and progression of discharges in long air gaps are attributable to two intertwined physical phenomena, namely, the leader channel and the streamer zone. Experimental studies have been used to develop empirical and physical models capable to represent the streamer zone and the leader channel. The empirical ones have led to improvements in the electrical design of high voltage apparatus and insulation distances, but they cannot take into account factors associated with fundamental physics and/or the behavior of materials. The physical models have been used to describe and understand the discharge phenomena of laboratory and lightning discharges. However, because of the complex simulations necessary to reproduce real cases, they are not in widespread use in the engineering of practical applications. Hence, the aim of the work presented here is to develop a model based on physics of the discharge capable to validate and complement the existing engineering models. The model presented here proposes a new geometrical approximation for the representation of the streamer and the calculation of the accumulated electrical charge. The model considers a variable streamer region that changes with the temporal and spatial variations of the electric field. The leader channel is modeled using the non local thermo-equilibrium equations. Furthermore, statistical delays before the inception of the first corona, and random distributions to represent the tortuous nature of the path taken by the leader channel were included based on the behavior observed in experimental tests, with the intention of ensuring the discharge behaved in a realistic manner. For comparison purposes, two different gap configurations were simulated. A reasonable agreement was found between the physical model and the experimental test results.

  10. Influence of Dynamic Properties of Nonlinear Over-Voltage Limiter on Over-Voltage Limitation in Distribution Networks

    Directory of Open Access Journals (Sweden)

    A. N. Bokhan

    2009-01-01

    Full Text Available One of the most efficient means of over-voltage reduction in arcing ground short-circuits is an application of   a nonlinear over-voltage limiter. It is necessary to take into account dynamic properties of the nonlinear over-voltage limiter in order to ensure authentic simulation of  over-voltage in the network A dynamic model of  the non-linear over-voltage limiter which takes a time lag constant   τ  into account during transition of the nonlinear over-voltage limiter into conducting state has been developed in the paper.

  11. An analytical model for the drain-source breakdown voltage of RF LDMOS power transistors with a Faraday shield

    Institute of Scientific and Technical Information of China (English)

    Zhang Wenmin; Zhang Wei; Fu Jun; Wang Yudong

    2012-01-01

    An analytical model for the drain-source breakdown voltage of an RF LDMOS power transistor with a Faraday shield is derived on the basis of the solution of the 2D Poisson equation in a p-type epitaxial layer,as well as an n-type drift region by means of parabolic approximation of electrostatic potential.The model captures the influence of the p-type epitaxial layer doping concentration on the breakdown voltage,compared with the previously reported model,as well as the effect of the other device parameters.The analytical model is validated by comparing with a numerical device simulation and the measured characteristics of LDMOS transistors.Based on the model,optimization of LDMOS device parameters to achieve proper trade-off between the breakdown voltage and other characteristic parameters such as on-resistance and feedback capacitance is analyzed.

  12. High-Speed InGaAs/InP Double Heterostructure Bipolar Transistor with High Breakdown Voltage

    Institute of Scientific and Technical Information of China (English)

    JIN Zhi; SU Yong-Bo; CHENG Wei; LIU Xin-Yu; XU An-Huai; QI Ming

    2008-01-01

    We design and fabricate an InGaAs/InP double heterostructure bipolar transistor (DHBT). The spike of the conduction band discontinuity between InGaAs base and InP collector is successfully eliminated by insertion of an InGaAs layer and two InGaAsP layers. The current gain cutoff frequency and maximum oscillation frequency are as high as 155 and 144GHz. The breakdown voltage in common-emitter configuration is more than 7V. The high cutoff frequency and high breakdown voltage make high-speed and high-power circuits possible.

  13. Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes

    Science.gov (United States)

    Yuan, Hao; Tang, Xiaoyan; Song, Qingwen; Zhang, Yimen; Zhang, Yuming; Yang, Fei; Niu, Yingxi

    2015-01-01

    The analytical models of on-resistance and reverse breakdown voltage for 4H-SiC floating junction SBD are presented with the analysis of the transport path of the carriers and electric field distribution in the drift region. The calculation results from the analytical models well agree with the simulation results. The effects of the key structure parameters on specific on-resistance and breakdown voltage are described respectively by analytical models. Moreover, the relationship between BFOM and parameters of floating junction are investigated. It is proved that the analytical models are more convenient for the design of the floating junction SBDs.

  14. Improving breakdown voltage performance of SOI power device with folded drift region

    Science.gov (United States)

    Qi, Li; Hai-Ou, Li; Ping-Jiang, Huang; Gong-Li, Xiao; Nian-Jiong, Yang

    2016-07-01

    A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. Project supported by the Guangxi Natural Science Foundation of China (Grant Nos. 2013GXNSFAA019335 and 2015GXNSFAA139300), Guangxi Experiment Center of Information Science of China (Grant No. YB1406), Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing of China, Key Laboratory of Cognitive Radio and Information Processing (Grant No. GXKL061505), Guangxi Key Laboratory of Automobile Components and Vehicle Technology of China (Grant No. 2014KFMS04), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

  15. One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

    Institute of Scientific and Technical Information of China (English)

    张珺; 郭宇锋; 徐跃; 林宏; 杨慧; 洪洋; 姚佳飞

    2015-01-01

    A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device.

  16. Impact of metal overhang and guard ring techniques on breakdown voltage of Si strip sensors - 2003 IEEE nuclear science symposium, medical imaging conference, and workshop of room-temperature semiconductor detectors

    CERN Document Server

    Ranjan, K; Namrata, S; Chatterji, S; Srivastava-Ajay, K; Kumar, A; Jha, Manoj Kumar; Shivpuri, R K

    2004-01-01

    The importance of Si sensors in high-energy physics (HEP) experiments can hardly be overemphasized. However, the high luminosity and the high radiation level in the future HEP experiments, like Large Hadron Collider (LHC), has posed a serious challenge to the fabrication of Si detectors. For the safe operation over the full LHC lifetime, detectors are required to sustain very high voltage operation, well exceeding the bias voltage needed to full deplete the heavily irradiated Si sensors. Thus, the main effort in the development of Si sensors is concentrated on a design that avoids p-n junction breakdown at operational biases. Among various proposed techniques, Field-limiting Ring (FLR) (or guard ring) and Metal-Overhang (MO) are technologically simple and are suitable for vertical devices. Since high-voltage planar Si junctions are of great importance in the HEP experiments, it is very interesting to compare these two aforementioned techniques for achieving the maximum breakdown voltage under optimal conditio...

  17. Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode

    Science.gov (United States)

    Resfa, A.; Menezla, Brahimi. R.; Benchhima, M.

    2014-08-01

    This work aims to determine the characteristic I (breakdown voltage) of the inverse current in a GaAs PN junction diode, subject to a reverse polarization, while specifying the parameters that influence the breakdown voltage of the diode. In this work, we simulated the behavior of the ionization phenomenon by impact breakdown by avalanche of the PN junctions, subject to an inverse polarization. We will take into account both the trapping model in a stationary regime in the P+N structure using like material of basis the III-V compounds and mainly the GaAs semi-insulating in which the deep centers have in important densities. We are talking about the model of trapping in the space charge region (SCR) and that is the trap density donor and acceptor states. The carrier crossing the space charge region (SCR) of W thickness creates N electron—hole pairs: for every created pair, the electron and the hole are swept quickly by the electric field, each in an opposite direction, which comes back, according to an already accepted reasoning, to the crossing of the space charge region (SCR) by an electron or a hole. So the even N pair created by the initial particle provoke N2 ionizations and so forth. The study of the physical and electrical behaviour of semiconductors is based on the influence of the presence of deep centers on the characteristic I(V) current-tension, which requires the calculation of the electrostatic potential, the electric field, the integral of ionization, the density of the states traps, the diffusion current of minority in the regions (1) and (3), the current thermal generation in the region (2), the leakage current in the surface, and the breakdown voltage.

  18. Can surface cracks and unipolar arcs explain breakdown and gradient limits?

    CERN Document Server

    Norem, Jim

    2012-01-01

    We argue that the physics of unipolar arcs and surface cracks can help understand rf breakdown, and vacuum arc data. We outline a model of the basic mechanisms involved in breakdown and explore how the physics of unipolar arcs and cracks can simplify the picture of breakdown and gradient limits in accelerators, tokamaks as well as laser ablation, micrometeorites and other applications. Cracks are commonly seen in SEM images of arc damage and they are produced as the liquid metal cools, they produce the required field enhancements to explain field emission data data and can produce fractures that would trigger breakdown events. Unipolar arcs can produce currents sufficient to short out rf structures, should cause the sort of damage seen in SEM images, should be unstable and possibly self-quenching as seen in optical fluctuations and surface damage.

  19. Gas Breakdown in the Sub-Nanosecond Regime with Voltages Below 15 KV

    Science.gov (United States)

    2013-06-01

    here gas breakdown during nanosecond pulses occurs mainly as corona discharges on wire antennas, and represents an unwanted effect - General...switching for pulsed power applications Published data [2,3,4,5] for subnanosecond breakdown are mainly related to discharges in gases with...pressures at or above one atmosphere , or for liquids, and for quasi- homogeneous electric fields which are at least on the order of several 100 kV/cm. For

  20. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

  1. Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

    Institute of Scientific and Technical Information of China (English)

    Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

    2012-01-01

    We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer,which leads to a higher potential barrier at the backside of the twodimensional electron gas channel and better carrier confinement.This,remarkably,reduces the drain leakage current and improves the device breakdown voltage.The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (~ 100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (~50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate-drain distance of 1μm.The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm,a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz.

  2. A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

    Science.gov (United States)

    Jamali Mahabadi, S. E.; Rajabi, Saba; Loiacono, Julian

    2015-09-01

    In this paper a partial silicon on insulator (PSOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) with periodic buried oxide layer (PBO) for enhancing breakdown voltage (BV) and self-heating effects (SHEs) is proposed for the first time. This new structure is called periodic buried oxide partial silicon on insulator (PBO-PSOI). In this structure, periodic small pieces of SiO2 were used as the buried oxide (BOX) layer in PSOI to modulate the electric field in the structure. It was demonstrated that the electric field is distributed more evenly by producing additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the PBO-PSOI structure. Hence, the area underneath the electric field curve increases which leads to higher breakdown voltage. Also a p-type Si window was introduced in the source side to force the substrate to share the vertical voltage drop, leading to a higher vertical BV. Furthermore, the Si window under the source and those between periodic pieces of SiO2 create parallel conduction paths between the active layer and substrate thereby alleviating the SHEs. Simulations with the two dimensional ATLAS device simulator from the Silvaco suite of simulation tools show that the BV of PBO-PSOI is 100% higher than that of the conventional partial SOI (C-PSOI) structure. Furthermore the PBO-PSOI structure alleviates SHEs to a greater extent than its C-PSOI counterpart. The achieved drain current for the PBO-PSOI structure (100 μA), at drain-source voltage of VDS = 100 V and gate-source voltage of VGS = 25 V, is shown to be significantly larger than that in C-PSOI and fully depleted SOI (FD-SOI) structures (87 μA and 51 μA respectively). Drain current can be further improved at the expense of BV by increasing the doping of the drift region.

  3. Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

    Science.gov (United States)

    Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

    2016-12-01

    Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

  4. Effects of Thermal and Solvent Aging on Breakdown Voltage of TPE, PBT/PET Alloy, and PBT Insulated Low Voltage Electric Wire

    Directory of Open Access Journals (Sweden)

    Eun-Soo Park

    2013-01-01

    Full Text Available Tests were performed to evaluate the effects of thermal and solvent aging on the mechanical and dielectric breakdown properties of four types of polyester resins, namely, the insulation layer of poly(butylene terephthalat (PBT- based thermoplastic elastomer (TPE, TPE1, poly(butylene 2,6-naphthalate-based TPE (TPE2, PBT/poly(ethylene terephthalate alloy (Alloy, and PBT extruded onto a copper conductor of low voltage electric wire. The tensile specimens used in this series were prepared from the same extruded resins. The prepared electric wires and tensile specimens were thermally aged in air and in toluene, xylene, TCB, and NMP. When Alloy and PBT were thermally aged in toluene, xylene and TCB at 120°C for 6 h, the tensile properties were significantly decreased compared to TPE1 and TPE2 at the same condition. The reduction of elongation at break of Alloy was more discernible than that of PBT. This result indicated that Alloy is more affected by thermal and solvent ageing. Among them, TPE2 showed the highest breakdown voltage (BDV, and it has also the highest BDV after thermal and solvent aging.

  5. A Test Study of 50% Lightning Impulse Breakdown Voltage on Rod-Plane Gap with Two-Phase Mixture of Gas and Solid Particles

    Science.gov (United States)

    He, Zhenghao; Xu, Huaili; Bai, Jing; Yu, Fusheng; Hu, Feng; Li, Jin

    2007-12-01

    A test study on 50% lightning impulse breakdown voltage in two-phase mixture of gas and solid particles has been carried out in a specially designed discharge cabinet. A mechanical sieve is set up for sifting different solid particles into the discharge space uniformly. The lightning impulse voltage according with international electro-technical commission (IEC) standard is applied to the electrodes inside the discharge cabinet by the rule of up-down method in a total of 40 times. The results showed that the 50% lightning impulse breakdown voltage in two-phase mixture of gas and solid particles has its own features and is much different from that in air.

  6. Voltage-stabilised elastomers with increased relative permittivity and high electrical breakdown strength by means of phase separating binary copolymer blends of silicone elastomers

    DEFF Research Database (Denmark)

    A Razak, Aliff Hisyam; Yu, Liyun; Skov, Anne Ladegaard

    2017-01-01

    Increased electrical breakdown strength and increased dielectric permittivity of silicone-based dielectric elastomers are achieved by means of the addition of so-called voltage-stabilisers prepared from PDMS–PPMS copolymers as well as PDMS–PEG copolymers in order to compensate for the negative...... effect of softness on electrical stability of silicone elastomers. The voltage-stabilised elastomer, incorporating a high-permittivity PDMS–PEG copolymer, possesses increased relative permittivity, high electrical breakdown strength, excellent network integrity and low dielectric loss and paves the way...... towards specialised silicone elastomers for dielectric elastomer transducer products with inherent softness and electrical stability, and thus increased actuation at a given voltage....

  7. Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates

    Institute of Scientific and Technical Information of China (English)

    Qiao Ming; Zhuang Xiang; Wu Li-Juan; Zhang Wen-Tong; Wen Heng-Juan; Zhang Bo; Li Zhao-Ji

    2012-01-01

    Based on the theoretical and experimental investigation of a thin silicon layer (TSL) with linear variable doping (LVD) and further research on the TSL LVD with a multiple step field plate (MSFP),a breakdown voltage (BV) model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator (SOI) device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field (ENDIF),from which the reduced surface field (RESURF) condition is deduced.The drain in the centre of the device has a good self-isolation effect but the problem of the high voltage interconnection (HVI) line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET (nLDMOS) with MSFP is realized.The experimental breakdown voltage (BV) and specific on-resistance (Ron,sp) of the TSL LVD SOI device are 694 V and 21.3 Ω.mm2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.

  8. Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect

    Institute of Scientific and Technical Information of China (English)

    Zheng Zhi; Li Wei; Li Ping

    2013-01-01

    A non-depletion floating layer silicon-on-insulator (NFL SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) is proposed and the NFL-assisted modulated field (NFLAMF) principle is investigated in this paper.Based on this principle,the floating layer can pin the potential for modulating bulk field.In particular,the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer (BOX).At variation of back-gate bias,the shielding charges of NFL can alsoeliminate back-gate effects.The simulated results indicate that the breakdown voltage (BV) is increased from 315 V to 558 V compared to the conventional reduced surface field (RESURF) SOI (CSOI) LDMOS,yielding a 77% improvement.Furthermore,due to the field shielding effect of the NFL,the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device.

  9. High-Voltage Breakdown Penalties for the Beam-Breakup Instability

    Energy Technology Data Exchange (ETDEWEB)

    Ekdahl, Carl August [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2016-11-22

    The strength of the dangerous beam breakup (BBU) instability in linear induction accelerators (LIAs) is determined by the transverse coupling impedance Z of the induction cell cavity. For accelerating gap width w less than the beam pipe radius b, the transverse impedance is theoretically proportional to w/b, favoring narrow gaps to suppress BBU. On the other hand, cells with narrow gaps cannot support high accelerating gradients, because of electrical breakdown and shorting of the gap. Thus, there is an engineering trade-off between BBU growth and accelerating gradient, which must be considered for next generation LIAs now being designed. In this article this tradeoff is explored, using a simple pillbox cavity as an illustrative example. For this model, widening the gap to reduce the probability of breakdown increases BBU growth, unless higher magnetic focusing fields are used to further suppress the instability.

  10. Theoretical analysis and design of double implanted MOSFET on 6H silicon carbide wafer for low power dissipation and large breakdown voltage

    Directory of Open Access Journals (Sweden)

    Munish Vashishath

    2008-05-01

    Full Text Available This paper analyses the device structure of a 6H-SiC vertical double-implanted MOSFET (DIMOSFET in order to provide a high breakdown voltage of about 10 kV and a low power dissipation for a rise in device temperature of 600 oC. Analysis of an 800 W power dissipation for stable device operation corresponding to this temperature rise shows optimum doping levels of the drift region lying between 5*1013 cm-3 and 5*1015 cm-3 for a breakdown voltage of 10 kV.

  11. Optimizing Design of Breakdown Voltage to Eliminate Back Gate Bias Effect in Silicon-on-Insulator Diode Using Low Doping Buried Layer

    Institute of Scientific and Technical Information of China (English)

    H0 Chi-Hon; LIAO Chen-Nan; CHIEN Feng-Tso; TSAI Yao-Tsung

    2009-01-01

    This work presents the optimal design of a silicon-on-insulator (SOI) diode structure to eliminate the back gate bias effect and to improve breakdown voltage. The SOI structure is characterized by inserting a silicon low doping buried layer (LDBL) between the silicon layer and the buried oxide layer. The LDBL thickness is a key parameter that affects the strong inversion condition of the back MOS capacitor of the new SOI diode. The optimal LDBL thickness in the SOI diode is 2.65μm. The LDBL shielding layer improved the breakdown voltage.

  12. Investigations of the electrical breakdown properties of insulator materials used in high voltage vacuum diodes

    Energy Technology Data Exchange (ETDEWEB)

    Shurter, R.P.; Carlson, R.L.; Melton, J.G.

    1993-08-01

    The Injector for the proposed Dual-Axis Radiographic Hydrodynamic Testing (DARHT) Facility at Los Alamos utilizes a monolithic insulator deployed in a radial configuration. The 1.83-m-diam {times} 25.4-cm-thick insulator with embedded grading rings separates the output oil transmission line from the vacuum vessel that contains the re-entrant anode and cathode assemblies. Although much work has been done by the pulse power community in studying surface flash-over of insulating materials used in both axial and radial configurations, dendrite growth at the roots of grading rings embedded in materials suitable for very large insulators is less well characterized. Degradation of several acrylic insulators has been observed in the form of dendrites growing at the roots of the grading rings for large numbers (100`s) of pulses on the prototype DARHT Injector and other machines using similar radial geometries. In a few cases, these dendrites have led to catastrophic bulk breakdown of the acrylic between two grading rings making the insulator a costly loss. Insulating materials under investigation are acrylic (Lucite), epoxy (Furane), and cross-linked polystyrene (Rexolite); each of these materials has its own particular mechanical and electrical merits. All of these materials have been cast and machined into the required large size for the Injector. Test methods and the results of investigations into the breakdown strength of various interface geometries and the susceptibility of these materials to dendrite growth are reported.

  13. Determination of breakdown voltage of In 0.53Ga 0.47As/InP single photon avalanche diodes

    Institute of Scientific and Technical Information of China (English)

    Peng Zhou; Changjun Liao; Zhengjun Wei; Chunfei Li; Shuqiong Yuan

    2011-01-01

    @@ We examine the saturation of relative current gain of In0.53Ga0.47 As/InP single photon avalanche diodes (SPADs) operated in Geiger mode. The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method. The analysis method is temperature-independent and can be applied to most SPADs.%We examine the saturation of relative current gain of In0.53Ga0.47As/InP single photon avalanche diodes (SPADs) operated in Geiger mode. The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method. The analysis method is temperature-independent and can be applied to most SPADs.

  14. A NEW STRUCTURE AND ITS ANALYTICAL BREAKDOWN MODEL OF HIGH VOLTAGE SOI DEVICE WITH STEP UNMOVABLE SURFACE CHARGES OF BURIED OXIDE LAYER

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A new SOI (Silicon On Insulator) high voltage device with Step Unmovable Surface Charges(SUSC) of buried oxide layer and its analytical breakdown model are proposed in the paper. The unmovable charges are implemented into the upper surface of buried oxide layer to increase the vertical electric field and uniform the lateral one. The 2-D Poisson's equation is solved to demonstrate the modulation effect of the immobile interface charges and analyze the electric field and breakdown voltage with the various geometric parameters and step numbers. A new RESURF (REduce SURface Field) condition of the SOI device considering the interface charges and buried oxide is derived to maximize breakdown voltage. The analytical results are in good agreement with the numerical analysis obtained by the 2-D semiconductor devices simulator MEDICI. As a result, an 1200V breakdown voltage is firstly obtained in 3μm-thick top Si layer, 2μm-thick buried oxide layer and 70μm-length drift region using a linear doping profile of unmovable buried oxide charges.

  15. DC conduction and breakdown characteristics of Al2O3/cross-linked polyethylene nanocomposites for high voltage direct current transmission cable insulation

    Science.gov (United States)

    Park, Yong-Jun; Kwon, Jung-Hun; Sim, Jae-Yong; Hwang, Ju-Na; Seo, Cheong-Won; Kim, Ji-Ho; Lim, Kee-Joe

    2014-08-01

    We have discussed a cross-linked polyethylene (XLPE) nanocomposite insulating material that is able to DC voltage applications. Nanocomposites, which are composed in polymer matrix mixed with nano-fillers, have received considerable attention because of their potential benefits as dielectrics. The nano-sized alumina oxide (Al2O3)/XLPE nanocomposite was prepared, and three kinds of test, such as DC breakdown, DC polarity reversal breakdown, and volume resistivity were performed. By the addition of nano-sized Al2O3 filler, both the DC breakdown strength and the volume resistivity of XLPE were increased. A little homogeneous space charge was observed in Al2O3/XLPE nanocomposite material in the vicinity of electrode through the polarity reversal breakdown test. From these results, it is thought that the addition of Al2O3 nano-filler is effective for the improvement of DC electrical insulating properties of XLPE.

  16. Low-voltage limiters at DC railways; Niederspannungsbegrenzer fuer Gleichstrombahnen

    Energy Technology Data Exchange (ETDEWEB)

    Thiede, J. [Balfour Beatty Rail GmbH, Power Systems, Offenbach (Germany); Zeller, P. [Fachhochschul-Sudiengaenge Wels (Austria)

    2002-10-01

    Because the effects of stray currents direct earthing of running rails is undesirable at DC railways. Open links between return conductors and electrically conductive bodies are formed by low-voltage limiters, their application fields being derived from principal rules of return conducting at DC railways and further demands. A suitable technical solution is given by hybrid integrated circuitries. (orig.) [German] Bei DC-Bahnen ist die direkte Bahnerdung der Fahrschienen unerwuenscht wegen der Streustromgefahr. Niederspannungsbegrenzer bilden offene Verbindungen zwischen Rueckleitung und elektrisch leitfaehigen Koerpern. Ihre Einsatzbereiche leiten sich aus den Grundsaetzen der Rueckstromfuehrung bei DC-Bahnen und weiteren Anforderungen ab Eine technische Loesung hierfuer sind Hybridschaltungen. (orig.)

  17. Upper drift region double step partial SOI LDMOSFET: A novel device for enhancing breakdown voltage and output characteristics

    Science.gov (United States)

    Jamali Mahabadi, S. E.

    2016-01-01

    A new LDMOSFET structure called upper drift region double step partial silicon on insulator (UDDS-PSOI) is proposed to enhance the breakdown voltage (BV) and output characteristics. The proposed structure contains two vertical steps in the top surface of the drift region. It is demonstrated that in the proposed structure, the lateral electric field distribution is modified by producing two additional electric field peaks, which decrease the common peaks near the drain and gate junctions. The electric field distribution in the drift region is modulated and that of the buried layer is enhanced by the two steps in the top surface of the drift region, thereby resulting in the enhancement of the BV. The effect of device parameters, such as the step height and length in the top surface of the drift region, the doping concentration in the drift region, and the buried oxide length and thickness, on the electric field distribution and the BV of the proposed structure is studied. Simulation results from two-dimensional ATLAS simulator show that the BV of the UDDS-PSOI structure is 120% and 220% higher than that of conventional partial SOI (C-PSOI) and conventional SOI (C-SOI) structures, respectively. Furthermore, the drain current of the UDDS-PSOI is 11% larger than the C-PSOI structure with a drain-source voltage VDS = 100 V and gate-source voltage VGS = 5 V. Simulation results show that Ron in the proposed structure is 74% and 48% of that in C-PSOI and C-SOI structures, respectively.

  18. An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage

    Institute of Scientific and Technical Information of China (English)

    Xie Gang; Edward Xu; Niloufar Hashemi; Zhang Bo; Fred Y. Fu; Wai Tung Ng

    2012-01-01

    A reduced surface electric field in an AlGaN/GaN high electron mobility transistor (HEMT) is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas (2-DEG) channel as an electric field shaping layer.The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions.Compared with the HEMTs with conventional sourceconnected field plates and double field plates,the HEMT with a Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge.By optimizing both the length of Mg-doped layer,Lm,and the doping concentration,a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure,respectively.In a device with VGS =-5 V,Lm =1.5 μm,a peak Mg doping concentration of 8×1017 cm-3 and a drift region length of 10 μm,the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.

  19. A Test Study of 50% Lightning Impulse Breakdown Voltage on Rod-Plane Gap with Two-Phase Mixture of Gas and Solid Particles

    Institute of Scientific and Technical Information of China (English)

    HE Zheng-hao; XU Huai-li; BAI Jing; YU Fu-sheng; HU Feng; LI Jin

    2007-01-01

    A test study on 50% lightning impulse breakdown voltage in two-phase mixture of gas and solid particles has been carried out in a specially designed discharge cabinet.A mechanical sieve is set up for sifting different solid particles into the discharge space uniformly.The lightning impulse voltage according with international electro-technical commission (IEC) standard is applied to the electrodes inside the discharge cabinet by the rule of up-down method in a total of 40 times.The results showed that the 50% lightning impulse breakdown voltage in two-phase mixture of gas and solid particles has its own features and is much different from that in air.

  20. Influence of current limitation on voltage stability with voltage sourced converter HVDC

    DEFF Research Database (Denmark)

    Zeni, Lorenzo; Jóhannsson, Hjörtur; Hansen, Anca Daniela;

    2013-01-01

    A first study of voltage stability with relevant amount of Voltage Sourced Converter based High Voltage Direct Current (VSC-HVDC) transmission is presented, with particular focus on the converters’ behaviour when reaching their rated current. The detrimental effect of entering the current...

  1. Dual trench AlGaN/GaN HEMT on SiC substrate: A novel device to improve the breakdown voltage and high power performance

    Science.gov (United States)

    Ghaffari, Majid; Orouji, Ali A.

    2016-06-01

    In this paper, an excellent performance AlGaN/AlN/GaN/SiC High Electron Mobility Transistor (HEMT) with a dual trench technique (DT-HEMT) is proposed. In the proposed technique, the dual trench between the buffer layer and the nucleation layer is created. Both the trenches are made of Gallium Nitride. A trench is created under the source region to increase the breakdown voltage. In addition, the drain current will improve due to a created trench in below the gate region. The DC and RF characteristics of the DT-HEMT are investigated. Also, the characteristics of the proposed structure compared with the characteristics of a conventional structure (C-HEMT). Our results indicate that the dual trench technique has excellent impacts on the device characteristics, especially on the drain current, breakdown voltage, and maximum output power density. The breakdown voltage, drain current, and maximum power density of DT-HEMT structure improve 56 %, 52 %, and 310 % in comparison with the C-HEMT, respectively. Also, using the dual trench technique, the maximum oscillation frequency, maximum available gain, short channel effect, maximum DC transconductance, and output resistance of the DT-HEMT structure will increase. Therefore, the proposed HEMT structure shows outstanding electrical properties compared to similar devices are based on conventional structures.

  2. Advantages and limitations of transition voltage spectroscopy: A theoretical analysis

    NARCIS (Netherlands)

    Mirjani, F.; Thijssen, J.M.; Van der Molen, S.J.

    2011-01-01

    In molecular charge transport, transition voltage spectroscopy (TVS) holds the promise that molecular energy levels can be explored at bias voltages lower than required for resonant tunneling. We investigate the theoretical basis of this tool using a generic model. In particular, we study the length

  3. Breakdown characteristics of xenon HID Lamps

    Science.gov (United States)

    Babaeva, Natalia; Sato, Ayumu; Brates, Nanu; Noro, Koji; Kushner, Mark

    2009-10-01

    The breakdown characteristics of mercury free xenon high intensity discharge (HID) lamps exhibit a large statistical time lag often having a large scatter in breakdown voltages. In this paper, we report on results from a computational investigation of the processes which determine the ignition voltages for positive and negative pulses in commercial HID lamps having fill pressures of up to 20 atm. Steep voltage rise results in higher avalanche electron densities and earlier breakdown times. Circuit characteristics also play a role. Large ballast resistors may limit current to the degree that breakdown is quenched. The breakdown voltage critically depends on cathode charge injection by electric field emission (or other mechanisms) which in large part controls the statistical time lag for breakdown. For symmetric lamps, ionization waves (IWs) simultaneously develop from the bottom and top electrodes. Breakdown typically occurs when the top and bottom IWs converge. Condensed salt layers having small conductivities on the inner walls of HID lamps and on the electrodes can influence the ignition behavior. With these layers, IWs tend to propagate along the inner wall and exhibit a different structure depending on the polarity.

  4. RCRA materials analysis by laser-induced breakdown spectroscopy: Detection limits in soils

    Energy Technology Data Exchange (ETDEWEB)

    Koskelo, A.; Cremers, D.A.

    1994-09-01

    The goal of the Technical Task Plan (TTP) that this report supports is research, development, testing and evaluation of a portable analyzer for RCRA and other metals. The instrumentation to be built will be used for field-screening of soils. Data quality is expected to be suitable for this purpose. The data presented in this report were acquired to demonstrate the detection limits for laser-induced breakdown spectroscopy (LIBS) of soils using instrument parameters suitable for fieldable instrumentation. The data are not expected to be the best achievable with the high pulse energies available in laboratory lasers. The report presents work to date on the detection limits for several elements in soils using LIBS. The elements targeted in the Technical Task Plan are antimony, arsenic, beryllium, cadmium, chromium, lead, selenium, and zirconium. Data for these elements are presented in this report. Also included are other data of interest to potential customers for the portable LIBS apparatus. These data are for barium, mercury, cesium and strontium. Data for uranium and thorium will be acquired during the tasks geared toward mixed waste characterization.

  5. Physics-Based Compact Model for CIGS and CdTe Solar Cells: From Voltage-Dependent Carrier Collection to Light-Enhanced Reverse Breakdown: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Xingshu; Alam, Muhammad Ashraful; Raguse, John; Garris, Rebekah; Deline, Chris; Silverman, Timothy

    2015-10-15

    In this paper, we develop a physics-based compact model for copper indium gallium diselenide (CIGS) and cadmium telluride (CdTe) heterojunction solar cells that attributes the failure of superposition to voltage-dependent carrier collection in the absorber layer, and interprets light-enhanced reverse breakdown as a consequence of tunneling-assisted Poole-Frenkel conduction. The temperature dependence of the model is validated against both simulation and experimental data for the entire range of bias conditions. The model can be used to characterize device parameters, optimize new designs, and most importantly, predict performance and reliability of solar panels including the effects of self-heating and reverse breakdown due to partial-shading degradation.

  6. 具有浮空埋层的高压器件新结构和击穿电压模型%A New High Voltage Device with Floating Buried Layer and the Model of Breakdown Voltage

    Institute of Scientific and Technical Information of China (English)

    李琦; 张扬; 段吉海

    2011-01-01

    提出具有浮空埋层的变掺杂高压器件新结构(BVLD:Variation in lateral doping with floating buriedlayer),建立其击穿电压模型.线性变掺杂漂移区的电场耦合作用使表面电场达到近似理想的均匀分布,n+浮空等电位层与衬底形成新平行平面结,使得纵向电压由常规结构的一个pn结承受转变为两个串联pn结分担,改善了器件的击穿特性;建立二维的击穿电压模型,获得器件结构参数间的优化关系.结果表明:与常规LDMOS相比,BVLD结构的击穿电压提高94%.%A novel high voltage device with variation in lateral doping and floating buried layer (BVLD) is proposed, and a model of breakdown voltage is developed. The surface electric field reaches nearly ideal uniform distribution due to electric field modulation of variation in lateral doping. A new parallel-plane junction is formed between n+ floating buried layer and substrate,which can support more biases by series of two pn junctions. Based on the 2-D model of breakdown voltage, the quantified optimal relation between the structure parameters is also obtained.The results indicate that the breakdown voltage of BVLD device is increased by 94% in comparison to conventional LDMOS.

  7. Steady-state analysis of the effect of reactive generation limits in voltage stability

    Energy Technology Data Exchange (ETDEWEB)

    Echavarren, F.M.; Lobato, E.; Rouco, L. [School of Engineering of Universidad Pontificia Comillas, C/Alberto Aguilera, 23, 28015 Madrid (Spain)

    2009-09-15

    Voltage collapse phenomena are highly affected by reactive power generation limits. Saturation of the reactive power generation limits of a unit may result in a deterioration of the voltage stability. However, in some cases when the power network is operating close to the voltage collapse point, the reactive power generation saturation of a unit can change the system voltages immediately from stable to unstable; thus, a dynamic voltage collapse leading to blackout may follow. This paper presents a steady-state analysis of the immediate instability caused by reactive power generation saturation phenomena. For this purpose, the paper proposes a novel index that evaluates ''when'' and ''why'' a reactive power generation saturation will only result in a deterioration of the system voltage stability or, on the contrary, it will make the system voltages immediately unstable. (author)

  8. Fabrication of Silicon Based Novel Structure JBS Diode with Breakdown Voltage above 300 V%300V以上硅基新型JBS肖特基二极管的制备

    Institute of Scientific and Technical Information of China (English)

    王一帆; 王朝林; 刘肃; 何少博

    2011-01-01

    为了在保留传统肖特基二极管正向压降低、电流密度大优点的基础上,使其反向击穿电压提高到了300 v以上,我们采用硅材料做为衬底,肖特基结区采用蜂房结构,终端采用两道场限环结构加一道切断环结构,所制备的肖特基二极管在正向电流10A时,正向压降仅为0.79 V;同时在施加300 V反向电压时,反向漏电流在5μA以下.%To retain the advantages of traditional Schottky diodes, such as high current density under low forward voltage and improve their breakdown voltage to above 300 V, we fabricated silicon-based novel structure JBS diodes. Its Schottky barrier area is a honey comb structure, and its terminal is formed by two floating field limiting rings(FLRs) plus a cutoff ring structure. Its forward voltage-drop is only 0. 79 V under 10 A current, while its leakage current is less than 5 (xA when 300 V reverse voltage is applied.

  9. Power flow control and voltage stability limit: regulating transformer versus UPFC

    Energy Technology Data Exchange (ETDEWEB)

    Haque, M.H. [Nanyang Technological Univ., Center for Advanced Power Electronics, Nanyang (Singapore)

    2004-05-01

    Power flow through an AC transmission line can be controlled by injecting an adjustable compensating voltage in series with the line. This paper evaluates and compares the power flow control ranges of a simple system obtained by injecting an adjustable series compensating voltage produced by a regulating transformer and unified power flow controller. The static voltage stability limits of the system with a regulating transformer and unified power flow controller are also determined and compared. In evaluating the power flow control ranges and voltage stability limits, the transmission line of the system is modelled in four different ways. The results obtained for various line models are also compared. (Author)

  10. Experimental studies on the power-frequency breakdown voltage of CF3I/N2/CO2 gas mixture

    Science.gov (United States)

    Zhang, Xiaoxing; Tian, Shuangshuang; Xiao, Song; Li, Yi; Deng, Zaitao; Tang, Ju

    2017-03-01

    Trifluoroiodomethane is a promising alternative to SF6 because of its good insulation properties and much less serious greenhouse effect than SF6. Previous studies have shown that the insulation performance of CF3I mixed with CO2 or N2 can equal that of SF6. This study explored the frequency breakdown characteristics of CF3I and SF6 mixed with two buffer gases. The effects of air pressure and field strength were analyzed. The fixed mixing ratio of CF3I and SF6 was 30% in the experiment. The breakdown experiment was conducted by changing the mixing ratio of CO2 and N2. Results showed that the CO2/N2 mixture ratio did not exert a synergetic effect, and the CF3I/CO2 breakdown performance was better than that of CF3I/N2 in the quasi-uniform and highly non-uniform electric fields. CO2 possibly provided the C atoms for the entire system to maintain a certain balance in C, and this balance inhibited the decomposition of CF3I. The breakdown performance of SF6/N2 was good in quasi-uniform field, whereas that of SF6/CO2 was good in the highly non-uniform field.

  11. Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD

    Institute of Scientific and Technical Information of China (English)

    LAU; KeiMay

    2010-01-01

    AlGaN/GaN high electron mobility transistors(HEMTs) were grown on Si substrates by MOCVD.In the HEMT structure,a 1 μm GaN buffer layer was partially doped with Mg in an attempt to increase the resistivity and minimize the buffer leakage.The AlGaN/GaN HEMTs grown on undoped and partially Mg-doped GaN buffer layers were processed and the DC characteristics of the devices were characterized for comparing the effect of Mg doping.For the device with the partially Mg-doped GaN buffer layer,a lower drain leakage current density of 55.8 nA/mm,a lower gate leakage current density of 2.73 μA/mm,and a higher off-state breakdown voltage of 104 V were achieved with device dimensions Lg/Wg/Lgs/Lgd=1/10/1/1 μm,better than the device with the undoped GaN buffer layer,which has a higher drain leakage current density of 9.2 μA/mm,a higher gate leakage current density of 91.8 μA/mm,and a lower off-state breakdown voltage of 87 V with the same device dimensions.

  12. Improving breakdown voltage and self-heating effect for SiC LDMOS with double L-shaped buried oxide layers

    Science.gov (United States)

    Bao, Meng-tian; Wang, Ying

    2017-02-01

    In this paper, a SiC LDMOS with double L-shaped buried oxide layers (DL-SiC LDMOS) is investigated and simulated. The DL-SiC LDMOS consists of two L-shaped buried oxide layers and two SiC windows. Using 2-D numerical simulation software, Atlas, Silvaco TCAD, the breakdown voltage, and the self-heating effect are discussed. The double-L shaped buried oxide layers and SiC windows in the active area can introduce an additional electric field peak and make the electric field distribution more uniform in the drift region. In addition, the SiC windows, which connect the active area to the substrate, can facilitate heat dissipation and reduce the maximum lattice temperature of the device. Compared with the BODS structure, the DL-SiC LDMOS and BODS structures have the same device parameters, except of the buried oxide layers. The simulation results of DL-SiC LDMOS exhibits outstanding characteristics including an increase of the breakdown voltage by 32.6% to 1220 V, and a low maximum lattice temperature (535 K) at room temperature.

  13. Inner surface flash-over of insulator of low-inductance high-voltage self-breakdown gas switch and its application.

    Science.gov (United States)

    Zhang, Hong-Bo; Liu, Jin-liang

    2014-04-01

    In this paper, the inner surface flash-over of high-voltage self-breakdown switch, which is used as a main switch of pulse modulator, is analyzed in theory by employing the method of distributed element equivalent circuit. Moreover, the field distortion of the switch is simulated by using software. The results of theoretical analysis and simulation by software show that the inner surface flash-over usually starts at the junction points among the stainless steel, insulator, and insulation gas in the switch. A switch with improved structure is designed and fabricated according to the theoretical analysis and simulation results. Several methods to avoid inner surface flash-over are used to improve the structure of switch. In experiment, the inductance of the switch is no more than 100 nH, the working voltage of the switch is about 600 kV, and the output voltage and current of the accelerator is about 500 kV and 50 kA, respectively. And the zero-to-peak rise time of output voltage at matched load is less than 30 ns due to the small inductance of switch. The original switch was broken-down after dozens of experiments, and the improved switch has been worked more than 200 times stably.

  14. Breakdown Limits on Gigavolt-per-Meter Electron-Beam-Driven Wakefields in Dielectric Structures

    Science.gov (United States)

    Thompson, M. C.; Badakov, H.; Cook, A. M.; Rosenzweig, J. B.; Tikhoplav, R.; Travish, G.; Blumenfeld, I.; Hogan, M. J.; Ischebeck, R.; Kirby, N.; Siemann, R.; Walz, D.; Muggli, P.; Scott, A.; Yoder, R. B.

    2008-05-01

    First measurements of the breakdown threshold in a dielectric subjected to GV/m wakefields produced by short (30 330 fs), 28.5 GeV electron bunches have been made. Fused silica tubes of 100μm inner diameter were exposed to a range of bunch lengths, allowing surface dielectric fields up to 27GV/m to be generated. The onset of breakdown, detected through light emission from the tube ends, is observed to occur when the peak electric field at the dielectric surface reaches 13.8±0.7GV/m. The correlation of structure damage to beam-induced breakdown is established using an array of postexposure inspection techniques.

  15. Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring

    Science.gov (United States)

    Wang, Xiang-Dong; Deng, Xiao-Chuan; Wang, Yong-Wei; Wang, Yong; Wen, Yi; Zhang, Bo

    2014-05-01

    This paper describes the successful fabrication of 4H-SiC junction barrier Schottky (JBS) rectifiers with a linearly graded field limiting ring (LG-FLR). Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2 (about 80% of the theoretical value). Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termination, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length.

  16. Stabilizing Ferroresonance Oscillations in Voltage Transformers Using Limiter Circuit

    Directory of Open Access Journals (Sweden)

    Hamid Radmanesh

    2012-12-01

    Full Text Available This paper employs the multiple scales method and chaos theory for analyzing chaotic behavior of the voltage transformer (VT with linear core loss model. It is shown that ferroresonance phenomenon in VTs can be classified as chaotic dynamics, including a sequence of bifurcations such as period doubling bifurcation (PDB, saddle node bifurcation (SNB, Hopf Bifurcation (HB and chaos. Bifurcation diagrams and phase plane diagrams are drawn using a continuation method for linear core loss model and lyapunov exponents are obtained using the multiple scales method. At first an overview of the subject in the literature is provided. Then, ferroresonance phenomenon is introduced and its various types in a VT are simulated. Finally the effects of ferroresonance suppression circuit on stabilizing these oscillations are studied. The proposed approach is implemented using MATLAB, and simulation results are presented. The results show connecting the ferroresonance suppression circuit to the system configuration, causes great controlling effect on ferroresonance overvoltage.

  17. On the difference between breakdown and quench voltages of argon plasma and its relation to $4p-4s$ atomic state transitions

    CERN Document Server

    Forati, Ebrahim; Sievenpiper, Dan

    2014-01-01

    Using a relaxation oscillator circuit, breakdown ($V_{\\mathrm{BD}}$) and quench ($V_{\\mathrm{Q}}$) voltages of a DC discharge microplasma between two needle probes are measured. High resolution modified Paschen curves are obtained for argon microplasmas including a quench voltage curve representing the voltage at which the plasma turns off. It is shown that, for a point to point microgap (e.g. the microgap between two needle probes) which describes many realistic microdevices, neither Paschen's law applies nor field emission is noticeable. Although normally $V_{\\mathrm{BD}}>V_{\\mathrm{Q}}$, it is observed that depending on environmental parameters of argon, such as pressure and the driving circuitry, plasma can exist in a different state with equal $V_{\\mathrm{BD}}$ and $V_{\\mathrm{Q}}$. Using emission line spectroscopy, it is shown that $V_{\\mathrm{BD}}$ and $V_{\\mathrm{Q}}$ are equal if the atomic excitation by the electric field dipole moment dominantly leads to one of the argon's metastable states ($4P_{5...

  18. On the difference between breakdown and quench voltages of argon plasma and its relation to 4p–4s atomic state transitions

    Energy Technology Data Exchange (ETDEWEB)

    Forati, Ebrahim, E-mail: forati@ieee.org; Piltan, Shiva; Sievenpiper, Dan, E-mail: dsievenpiper@ucsd.edu [University of California San Diego, La Jolla, California 92093 (United States)

    2015-02-02

    Using a relaxation oscillator circuit, breakdown (V{sub BD}) and quench (V{sub Q}) voltages of a DC discharge microplasma between two needle probes are measured. High resolution modified Paschen curves are obtained for argon microplasmas including a quench voltage curve representing the voltage at which the plasma turns off. It is shown that for a point to point microgap (e.g., the microgap between two needle probes) which describes many realistic microdevices, neither Paschen's law applies nor field emission is noticeable. Although normally V{sub BD} > V{sub Q,} it is observed that depending on environmental parameters of argon, such as pressure and the driving circuitry, plasma can exist in a different state with equal V{sub BD} and V{sub Q.} Using emission line spectroscopy, it is shown that V{sub BD} and V{sub Q} are equal if the atomic excitation by the electric field dipole moment dominantly leads to one of the argon's metastable states (4P{sub 5} in our study)

  19. Thermal instability and current-voltage scaling in superconducting fault current limiters

    Energy Technology Data Exchange (ETDEWEB)

    Zeimetz, B [Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge CB1 3QZ (United Kingdom); Tadinada, K [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Eves, D E [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Coombs, T A [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Evetts, J E [Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge CB1 3QZ (United Kingdom); Campbell, A M [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom)

    2004-04-01

    We have developed a computer model for the simulation of resistive superconducting fault current limiters in three dimensions. The program calculates the electromagnetic and thermal response of a superconductor to a time-dependent overload voltage, with different possible cooling conditions for the surfaces, and locally variable superconducting and thermal properties. We find that the cryogen boil-off parameters critically influence the stability of a limiter. The recovery time after a fault increases strongly with thickness. Above a critical thickness, the temperature is unstable even for a small applied AC voltage. The maximum voltage and maximum current during a short fault are correlated by a simple exponential law.

  20. High voltage research (breakdown strengths of gaseous and liquid insulators). Semiannual report, April 1--September 30, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Christophorou, L. G.; James, D. R.; Pai, R. Y.; Mathis, R. A.; Pace, M. O.; Bouldin, D. W.; Christodoulides, A. A.; Chan, C. C.

    1977-11-01

    Direct current breakdown strength measurements on a large number of multicomponent gas mixtures at low (approximately less than 1 atm) and high (approximately less than 5 atm) pressures led to the discovery of many gas mixtures of electron-attaching gases and strongly electron-attaching gases with N/sub 2/ and C/sub 3/F/sub 8/ which are superior to SF/sub 6/. Of special significance are mixtures containing C/sub 4/F/sub 6/ (perfluoro-2-butyne). The breakdown strength of one such mixture (20 percent C/sub 4/F/sub 6/ to 80 percent SF/sub 6/) is approximately 30 percent higher than pure SF/sub 6/ under identical conditions, both at low (approximately 0.7 atm) and high (4.6 atm) pressures. Perfluorocyclohexene (C/sub 6/F/sub 10/) and C/sub 5/F/sub 8/ (perfluorocyclopentene) were found at low pressure (approximately 0.2 atm) to be, respectively, approximately 2.1 and 2.2 times better than SF/sub 6/ under comparable conditions; they both have a potential as additives in gas mixtures. The effect of the inelastic electron scattering properties of a gas via negative ion resonances in the low-energy range (1 to approximately 4 eV) on the breakdown strength has been demonstrated for H/sub 2/, N/sub 2/, and CO and binary mixtures of these with SF/sub 6/ and C/sub 4/F/sub 6/ (perfluoro-2-butyne). The construction of a new high pressure (to approximately 11 atm), variable temperature (-50/sup 0/C to + 150/sup 0/C) apparatus has been completed and a practical test facility utilizing cylindrical electrode geometries has been put into operation; the first results on the latter apparatus were on SF/sub 6/-N/sub 2/ and c-C/sub 4/F/sub 8/--N/sub 2/ mixtures. Studies of environmental effects of dielectric gases via their electron-impact-induced decompositions and analysis of their breakdown products have begun using mass spectrometry and gas chromatography; C/sub 4/F/sub 6/ (perfluoro-2-butyne) seems to be resistant to electron-impact-induced decomposition indicating long

  1. Impact on Generator Reactive Power Limits on a Static Voltage Stability

    Directory of Open Access Journals (Sweden)

    TOVAR-GONZALEZ, E. A.

    2011-11-01

    Full Text Available Voltage stability margin in a power system is closely related with the availability of reactive power in the system. Therefore, adequate modeling of the reactive power sources becomes an important issue in this type of studies. The Minimum Singular Value of the load flow Jacobian matrix has been commonly used as a static voltage stability index. In this paper, such index is used to assess the influence on the static voltage stability limit of modeling the generators reactive power limits by its capability curve. Simulation results on a test system indicate that modeling the reactive power limits of the generating units by the simplified Qmin/Qmax approach, commonly used by most of the load flow programs, yields optimistic values for this voltage stability index.

  2. Effects of Photovoltaic and Fuel Cell Hybrid System on Distribution Network Considering the Voltage Limits

    Directory of Open Access Journals (Sweden)

    ABYANEH, H. A.

    2010-11-01

    Full Text Available Development of distribution network and power consumption growth, increase voltage drop on the line impedance and therefore voltage drop in system buses. In some cases consumption is so high that voltage in some buses exceed from standard. In this paper, effect of the fuel cell and photovoltaic hybrid system on distribution network for solving expressed problem is studied. For determining the capacity of each distributed generation source, voltage limitation on the bus voltages under different conditions is considered. Simulation is done by using DIgSILENT software on the part of the 20 kV real life Sirjan distribution system. In this article, optimum location with regard to system and environmental conditions are studied in two different viewpoints.

  3. A dulal-functional medium voltage level DVR to limit downstream fault currents

    DEFF Research Database (Denmark)

    Li, Yun Wei; Vilathgamuwa, D. Mahinda; Loh, Poh Chiang

    2007-01-01

    , the DVR will therefore be tasked to mitigate even more faults involving downstream loads. Large fault currents would flow through the DVR during a downstream fault before the opening of a circuit breaker. This will cause the voltage at point of common coupling (PCC) to drop, which would affect the loads...... on the other parallel feeders connected to PCC. Furthermore, if not controlled properly, the DVR might also contribute to this PCC voltage sag in the process of compensating the missing voltage, thus further worsening the fault situation. To limit the flow of large line currents, and therefore restore the PCC...... voltage as well as protect the DVR system components, a downstream fault limiting function is proposed and integrated in the DVR operation. A flux-charge-model feedback algorithm is implemented so that the DVR would act as a large virtual inductance in series with the distribution feeder in fault...

  4. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-01-04

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  5. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-01-04

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

  6. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Science.gov (United States)

    Xue, JunShuai; Zhang, JinCheng; Hao, Yue

    2016-01-01

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm2/V s along with a sheet carrier density of 1.88 × 1013 cm-2 were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  7. The statistics of the dielectric breakdown of thin films

    CERN Document Server

    Rowland, S M

    1984-01-01

    The statistics of the dielectric breakdown of thin films of silicon monoxide and aluminium oxide have been studied. The self healing technique which allows numerous breakdowns to be observed on one sample was employed. Ramp and steady state voltage experiments are reported and the limitations of these techniques are discussed. It is shown that the experimental data on breakdown can be fitted to two-parameter Weibull distributions using mixed distribution models. Methods have been developed to facilitate the evaluation of the associated parameters from results taken over limited time periods by graphical means. The significance of these parameters and the relationship between ramp and steady state testing techniques are discussed.

  8. A High Breakdown Voltage A1GaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator

    Institute of Scientific and Technical Information of China (English)

    ZHOU Bin; WANG Jin-Yan; MENG Di; LIN Shu-Xun; FANG Min; DONG Zhi-Hua; YU Min; HAOYi-Long; Cheng P. WEN

    2011-01-01

    Direct oxidation of composite Al/Ti metal films as gate insulators for AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs/HEMTs) is successfully realized.The devices fabricated with this novel process exhibit four orders of magnitude reduction in gate leakage current and remarkable breakdown voltage (Vbr =490 V vs 88 V for normal HEMT) improvement,compared with conventional Schottky-gate HEMTs.Furthermore,the transconductance of the MOSHEMT is only slightly lower (2.6%) than that of Schottky-gate HEMTs and have a wider full width of half maximum.The notable enhancement in device performance renders this new process highly promising for GaN-based microwave power amplifier applications in communication and radar systems.AlGaN/GaN high-electron mobility transistors (HEMTs) are expected to be applied in the highfrequency and high-power area because of their excellent properties.AlGaN/GaN has,for example,a wide energy band gap (3.39eV),high density (up to 1013 cm-2) two-dimensional electron gas (2DEG)and a high saturation electron velocity.Due to the unavailability of native oxide,Schottky-contact gates are commonly adopted in AlGaN/GaN HEMTs.%Direct oxidation of composite Al/Ti metal films as gate insulators for AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs/HEMTs) is successfully realized. The devices fabricated with this novel process exhibit four orders of magnitude reduction in gate leakage current and remarkable breakdown voltage (Vbr = 490 V vs 88 V for normal HEMT) improvement, compared with conventional Schottky-gate HEMTs. Furthermore, the transconductance of the MOSHEMT is only slightly lower (2.6%) than that of Schottky-gate HEMTs and have a wider full width of half maximum. The notable enhancement in device performance renders this new process highly promising for GaN-based microwave power amplifier applications in communication and radar systems.

  9. Understanding Voltage Decay in Lithium-Rich Manganese-Based Layered Cathode Materials by Limiting Cutoff Voltage.

    Science.gov (United States)

    Yang, Jingsong; Xiao, Lifen; He, Wei; Fan, Jiangwei; Chen, Zhongxue; Ai, Xinping; Yang, Hanxi; Cao, Yuliang

    2016-07-27

    The effect of the cutoff voltages on the working voltage decay and cyclability of the lithium-rich manganese-based layered cathode (LRMO) was investigated by electrochemical measurements, electrochemical impedance spectroscopy, ex situ X-ray diffraction, transmission electron microscopy, and energy dispersive spectroscopy line scan technologies. It was found that both lower (2.0 V) and upper (4.8 V) cutoff voltages cause severe voltage decay with cycling due to formation of the spinel phase and migration of the transition metals inside the particles. Appropriate cutoff voltage between 2.8 and 4.4 V can effectively inhibit structural variation as the electrode demonstrates 92% capacity retention and indiscernible working voltage decay over 430 cycles. The results also show that phase transformation not only on high charge voltage but also on low discharge voltage should be addressed to obtain highly stable LRMO materials.

  10. On the influence of high voltage slope steepness on breakdown and development of pulsed dielectric barrier discharges

    Science.gov (United States)

    Höft, H.; Becker, M. M.; Loffhagen, D.; Kettlitz, M.

    2016-12-01

    The influence of the steepness of the applied high voltage (HV) waveform on the characteristics of pulsed dielectric barrier discharges (DBDs) is investigated using a single-filament arrangement with 1 mm gap in 0.1 vol% O2 in N2 at atmospheric pressure. The slope steepness was varied between 75 V ns-1 and 200 V ns-1. The discharge development was recorded with a combined iCCD and streak camera system accompanied by electrical measurements. The analysis was supported by time-dependent, spatially one-dimensional fluid model calculations. A steeper HV slope leads to a higher transferred charge and electrical energy per cycle. The DBD emission structure in the gap features a shorter ‘dark space’ in front of the cathode for steeper HV pulses. The starting velocity of the positive streamer-like propagation at the rising slope of the HV pulses increases with increasing slope steepness, but without influencing the maximal velocity in front of the cathode. At the falling slope, however, smaller propagation velocities for steeper pulses were measured. The modelling results and the measurements of the emission during the pre-phase suggest that the elevated pre-ionisation and higher electrical energy for steeper HV slopes is responsible for most of the observed effects.

  11. A micro-power LDO with piecewise voltage foldback current limit protection

    Institute of Scientific and Technical Information of China (English)

    Wei Hailong; Liu Youbao; Guo Zhongjie; Liao Xue

    2012-01-01

    To achieve a constant current limit,low power consumption and high driving capability,a micro-power LDO with a piecewise voltage-foldback current-limit circuit is presented.The current-limit threshold is dynamically adjusted to achieve a maximum driving capability and lower quiescent current of only 300 nA.To increase the loop stability of the proposed LDO,a high impedance transconductance buffer under a micro quiescent current is designed for splitting the pole that exists at the gate of the pass transistor to the dominant pole,and a zero is designed for the purpose of the second pole phase compensation.The proposed LDO is fabricated in a BiCMOS process.The measurement results show that the short-circuit current of the LDO is 190 mA,the constant limit current under a high drop-out voltage is 440 mA,and the maximum load current under a low drop-out voltage is up to 800 mA.In addition,the quiescent current of the LDO is only 7 μA,the load regulation is about 0.56% on full scale,the line regulation is about 0.012%/V,the PSRR at 120 Hz is 58 dB and the drop-out voltage is only 70 mV when the load current is 250 mA.

  12. Wind farms generation limits and its impact in real-time voltage stability assessment

    DEFF Research Database (Denmark)

    Perez, Angel; Jóhannsson, Hjörtur; Østergaard, Jacob

    2015-01-01

    indicates the distance to the limit activation and theeffect of each load in such a limit. The wind farm control schemesincludes voltage control and it is represented as a constantcurrent at its limit. A criteria to select the critical bus bar, basedon the generator transformation coefficients, is presented....... Thismethodology is tested in a platform that produces synthesizedPMU measurements from time-domain simulations and criticalboundary for the wind-farm limits are shown. The methodology isalso tested for synchronous machines and its parallel structure isexploited when implemented in a High Performance...

  13. Improved Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors by Employing Polyimide/Chromium Composite Thin Films as Surface Passivation and High-Permittivity Field Plates

    Science.gov (United States)

    Chu, Fu-Tong; Chen, Chao; Zhou, Wei; Liu, Xing-Zhao

    2013-09-01

    The breakdown voltage of AlGaN/GaN high electron mobility transistors (HEMTs) is enhanced by employing metal chromium (Cr) nanoparticle-embedded polyimide (PI) as a high-permittivity (high-K) dielectric covering both the source-gate and gate-drain regions. The PI/Cr composite high-K dielectrics acting as a field plate prevent the occurrence of strong electric fields produced at the drain side edge of the gate electrode to obtain an optimum lateral electric flux of HEMTs. The breakdown voltage is improved by approximately 35% when using the PI/Cr thin film dielectric field plate while maintaining high performance, a high transconductance value of 122.4 mS/mm, and a large saturated drain-current value of 748 mA/mm.

  14. Space charge inhibition effect of nano-Fe{sub 3}O{sub 4} on improvement of impulse breakdown voltage of transformer oil based on improved Kerr optic measurements

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Qing, E-mail: yangqing@cqu.edu.cn; Yu, Fei; Sima, Wenxia [State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Shapingba District, Chongqing, 400044 (China); Zahn, Markus [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2015-09-15

    Transformer oil-based nanofluids (NFs) with 0.03 g/L Fe{sub 3}O{sub 4} nanoparticle content exhibit 11.2% higher positive impulse breakdown voltage levels than pure transformer oils. To study the effects of the Fe{sub 3}O{sub 4} nanoparticles on the space charge in transformer oil and to explain why the nano-modified transformer oil exhibits improved impulse breakdown voltage characteristics, the traditional Kerr electro-optic field mapping technique is improved by increasing the length of the parallel-plate electrodes and by using a photodetector array as a high light sensitivity device. The space charge distributions of pure transformer oil and of NFs containing Fe{sub 3}O{sub 4} nanoparticles can be measured using the improved Kerr electro-optic field mapping technique. Test results indicate a significant reduction in space charge density in the transformer oil-based NFs with the Fe{sub 3}O{sub 4} nanoparticles. The fast electrons are captured by the nanoparticles and are converted into slow-charged particles in the NFs, which then reduce the space charge density and result in a more uniform electric field distribution. Streamer propagation in the NFs is also obstructed, and the breakdown strengths of the NFs under impulse voltage conditions are also improved.

  15. Driving CZTS to the SQ Limit: Solving the Open Circuit Voltage Problem

    Energy Technology Data Exchange (ETDEWEB)

    Haight, Richard A. [IBM Research, Yorktown, NY (United States). Thomas J. Watson Research Center; McCandless, Brian E. [Univ. of Delaware, Newark, DE (United States); Kummel, Andrew C. [Univ. of California, San Diego, CA (United States); Gordon, Roy G. [Harvard Univ., Cambridge, MA (United States)

    2016-12-15

    A key objective of this 3 year research effort was to reduce the open circuit voltage (Voc) deficit, defined as the difference between the absorber band gap and the measured Voc to below 475mV from values at the beginning of this work of 630-730mV. To achieve this reduction, along with the attendant goals of higher Voc and efficiency, detailed studies into the fundamental understanding of existing limitations were undertaken.

  16. Optimizing real power loss and voltage stability limit of a large transmission network using firefly algorithm

    Directory of Open Access Journals (Sweden)

    P. Balachennaiah

    2016-06-01

    Full Text Available This paper proposes a Firefly algorithm based technique to optimize the control variables for simultaneous optimization of real power loss and voltage stability limit of the transmission system. Mathematically, this issue can be formulated as nonlinear equality and inequality constrained optimization problem with an objective function integrating both real power loss and voltage stability limit. Transformers taps, unified power flow controller and its parameters have been included as control variables in the problem formulation. The effectiveness of the proposed algorithm has been tested on New England 39-bus system. Simulation results obtained with the proposed algorithm are compared with the real coded genetic algorithm for single objective of real power loss minimization and multi-objective of real power loss minimization and voltage stability limit maximization. Also, a classical optimization method known as interior point successive linear programming technique is considered here to compare the results of firefly algorithm for single objective of real power loss minimization. Simulation results confirm the potentiality of the proposed algorithm in solving optimization problems.

  17. Impulse breakdown of liquids

    CERN Document Server

    Ushakov, Vasily Y

    2007-01-01

    The book describes the main physical processes and phenomena in pulsed electric breakdown. The knowledge and the control of the electric breakdown of liquids is important not only for the insulation inside power systems but it is also used for the creation and information of high voltage and high current pulses. Such high-voltage micro- and nanosecond pulses find wide application in experimental physics, electro discharge technology, physics of dielectrics, radar detection and ranging, high-speed photography. The nature of charge carriers, mechanism of formation and evolution of the gas phase,

  18. Approaching the ppb detection limits for copper in water using laser induced breakdown spectroscopy

    Science.gov (United States)

    Tawfik, Walid; Sawaf, Sausan

    2014-05-01

    Copper concentrations in drinking-water is very important to be monitored which can cause cancer if it exceed about 10 mg/liter. In the present work, we have developed a simple, low laser power method to improve the detection limits of laser induced plasma spectroscopy LIBS for copper in aqueous solutions with different concentrations. In this method a medium density fiberboard (MDF) wood have been used as a substrate that absorbs the liquid sample to transform laser liquid interaction to laser solid interaction. Using the fundamental wavelength of Nd:YAG laser, the constructed plasma emissions were monitored for elemental analysis. The signal-to-noise ratio SNR was optimized using low laser fluence of 32 J cm-2, and detector (CDD camera) gate delay of 0.5 μs. Both the electron temperature and density of the induced plasma were determined using Boltzmann plot and the FWHM of the Cu at 324.7 nm, respectively. The plasma temperature was found to be 1.197 eV, while the plasma density was about 1.66 x 1019 cm-3. The detection limits for Cu at 324.7 nm is found to be 131 ppb comparable to the results by others using complicated system.

  19. High voltage research (breakdown strengths of gaseous and liquid insulators) and environmental effects of dielectric gases. Semiannual report, October 1, 1979-March 31, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Christophorou, L.G.; James, D.R.; Pai, R.Y.

    1980-08-01

    Topics covered include basic studies of gaseous dielectrics, direct current breakdown strengths of gases/mixtures, environmental effects studies and decomposition analyses, impulse studies, breakdown strengths of binary mixtures with concentric cylinder geometry, and a discussion of the experimental apparatus. (GHT)

  20. Breakdown of resistance to grapevine downy mildew upon limited deployment of a resistant variety

    Directory of Open Access Journals (Sweden)

    Bellin Diana

    2010-07-01

    Full Text Available Abstract Background Natural disease resistance is a cost-effective and environmentally friendly way of controlling plant disease. Breeding programmes need to make sure that the resistance deployed is effective and durable. Grapevine downy mildew, caused by the Oomycete Plasmopara viticola, affects viticulture and it is controlled with pesticides. Downy mildew resistant grapevine varieties are a promising strategy to control the disease, but their use is currently restricted to very limited acreages. The arising of resistance-breaking isolates under such restricted deployment of resistant varieties would provide valuable information to design breeding strategies for the deployment of resistance genes over large acreages whilst reducing the risks of the resistance being defeated. The observation of heavy downy mildew symptoms on a plant of the resistant variety Bianca, whose resistance is conferred by a major gene, provided us with a putative example of emergence of a resistance-breaking isolate in the interaction between grapevine and P. viticola. Results In this paper we describe the emergence of a P. viticola isolate (isolate SL that specifically overcomes Rpv3, the major resistance gene carried by Bianca at chromosome 18. We show that isolate SL has the same behaviour as two P. viticola isolates avirulent on Bianca (isolates SC and SU when inoculated on susceptible plants or on resistant plants carrying resistances derived from other sources, suggesting there is no fitness cost associated to the virulence. Molecular analysis shows that all three isolates are genetically closely related. Conclusions Our results are the first description of a resistance-breaking isolate in the grapevine/P. viticola interaction, and show that, despite the reduced genetic variability of P. viticola in Europe compared to its basin of origin and the restricted use of natural resistance in European viticulture, resistance-breaking isolates overcoming monogenic

  1. The voltage limitation for phase coherence experiments: non-equilibrium effects versus Joule heating

    Science.gov (United States)

    Linke, H.; Omling, P.; Xu, Hongqi; Lindelof, P. E.

    1996-12-01

    The breaking of phase coherence of electrons by a finite bias voltage is studied in a quasi-one-dimensional electron gas. Although the wire is longer than the energy relaxation length we find that Joule heating in the wire is not important for dephasing of non-equilibrium electrons. Instead, phase breaking occurs by electron-electron interaction due to the excess energy of the injected electrons with respect to the Fermi energy. The relevant limiting parameter for phase coherence is, therefore, the bias voltage, rather than the dissipated power. A model calculation suggests that our results are of general relevance for coherence experiments in one-dimensional geometry on length scales of the same order of magnitude as the energy relaxation length.

  2. Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel low-density metal-oxide semiconductor

    Institute of Scientific and Technical Information of China (English)

    Zhuang Xiang; Qiao Ming; Zhang Bo; Li Zhao-Ji

    2012-01-01

    This paper discusses the breakdown mechanism and proposes a new simulation and test method of breakdown voltage (BV) for an ultra-high-voltage (UHV) high-side thin layer silicon-on-insulator (SOI) p-channel low-density metaloxide semiconductor (LDMOS).Compared with the conventional simulation method,the new one is more accordant with the actual conditions of a device that can be used in the high voltage circuit.The BV of the SOI p-channel LDMOS can be properly represented and the effect of reduced bulk field can be revealed by employing the new simulation method.Simulation results show that the off-state (on-state) BV of the SOI p-channel LDMOS can reach 741 (620) V in the 3-μm-thick buried oxide layer,50-un-length drift region,and at -400 V back-gate voltage,enabling the device to be used in a 400 V UHV integrated circuit.

  3. Effects of Combustion-Induced Vortex Breakdown on Flashback Limits of Syngas-Fueled Gas Turbine Combustors

    Energy Technology Data Exchange (ETDEWEB)

    Ahsan Choudhuri

    2011-03-31

    Turbine combustors of advanced power systems have goals to achieve very low pollutants emissions, fuel variability, and fuel flexibility. Future generation gas turbine combustors should tolerate fuel compositions ranging from natural gas to a broad range of syngas without sacrificing operational advantages and low emission characteristics. Additionally, current designs of advanced turbine combustors use various degrees of swirl and lean premixing for stabilizing flames and controlling high temperature NOx formation zones. However, issues of fuel variability and NOx control through premixing also bring a number of concerns, especially combustor flashback and flame blowout. Flashback is a combustion condition at which the flame propagates upstream against the gas stream into the burner tube. Flashback is a critical issue for premixed combustor designs, because it not only causes serious hardware damages but also increases pollutant emissions. In swirl stabilized lean premixed turbine combustors onset of flashback may occur due to (i) boundary layer flame propagation (critical velocity gradient), (ii) turbulent flame propagation in core flow, (iii) combustion instabilities, and (iv) upstream flame propagation induced by combustion induced vortex breakdown (CIVB). Flashback due to first two foregoing mechanisms is a topic of classical interest and has been studied extensively. Generally, analytical theories and experimental determinations of laminar and turbulent burning velocities model these mechanisms with sufficient precision for design usages. However, the swirling flow complicates the flashback processes in premixed combustions and the first two mechanisms inadequately describe the flashback propensity of most practical combustor designs. The presence of hydrogen in syngas significantly increases the potential for flashback. Due to high laminar burning velocity and low lean flammability limit, hydrogen tends to shift the combustor operating conditions towards

  4. Effects of Combustion-Induced Vortex Breakdown on Flashback Limits of Syngas-Fueled Gas Turbine Combustors

    Energy Technology Data Exchange (ETDEWEB)

    Ahsan Choudhuri

    2011-03-31

    Turbine combustors of advanced power systems have goals to achieve very low pollutants emissions, fuel variability, and fuel flexibility. Future generation gas turbine combustors should tolerate fuel compositions ranging from natural gas to a broad range of syngas without sacrificing operational advantages and low emission characteristics. Additionally, current designs of advanced turbine combustors use various degrees of swirl and lean premixing for stabilizing flames and controlling high temperature NOx formation zones. However, issues of fuel variability and NOx control through premixing also bring a number of concerns, especially combustor flashback and flame blowout. Flashback is a combustion condition at which the flame propagates upstream against the gas stream into the burner tube. Flashback is a critical issue for premixed combustor designs, because it not only causes serious hardware damages but also increases pollutant emissions. In swirl stabilized lean premixed turbine combustors onset of flashback may occur due to (i) boundary layer flame propagation (critical velocity gradient), (ii) turbulent flame propagation in core flow, (iii) combustion instabilities, and (iv) upstream flame propagation induced by combustion induced vortex breakdown (CIVB). Flashback due to first two foregoing mechanisms is a topic of classical interest and has been studied extensively. Generally, analytical theories and experimental determinations of laminar and turbulent burning velocities model these mechanisms with sufficient precision for design usages. However, the swirling flow complicates the flashback processes in premixed combustions and the first two mechanisms inadequately describe the flashback propensity of most practical combustor designs. The presence of hydrogen in syngas significantly increases the potential for flashback. Due to high laminar burning velocity and low lean flammability limit, hydrogen tends to shift the combustor operating conditions towards

  5. Reduction of Electric Breakdown Voltage in LC Switching Shutters / Elektriskās Caursites Sprieguma Samazināšana Šķidro Kristālu Šūnās

    Science.gov (United States)

    Mozolevskis, G.; Ozols, A.; Nitiss, E.; Linina, E.; Tokmakov, A.; Rutkis, M.

    2015-10-01

    Liquid crystal display (LCD) industry is among the most rapidly growing and innovating industries in the world. Here continuously much effort is devoted towards developing and implementing new types of LCDs for various applications. Some types of LCDs require relatively high voltages for their operation. For example, bistable displays, in which an altering field at different frequencies is used for switching from clear to scattering states and vice versa, require electric fields at around 10 V/μm for operation. When operated at such high voltages an electrical breakdown is very likely to occur in the liquid crystal (LC) cell. This has been one of the limiting factors for such displays to reach market. In the present paper, we will report on the results of electrical breakdown investigations in high-voltage LC cells. An electrical breakdown in the cell is observed when current in the liquid crystal layer is above a specific threshold value. The threshold current is determined by conductivity of the liquid crystal as well as point defects, such as dust particles in LC layer, pinholes in coatings and electrode hillocks. In order to reduce the currents flowing through the liquid crystal layer several approaches, such as electrode patterning and adding of various buffer layers in the series with LC layer, have been tested. We demonstrate that the breakdown voltages can be significantly improved by means of adding insulating thin films. Šķidro kristālu ekrānu (LCD) industrija ir viena no visstraujāk augošajām industrijām pasaulē. Daudz pūļu un resursu tiek veltīti jauna tipa LCD izstrādē dažādiem pielietojumiem. Atsevišķa tipa LCD funkcionēšanai nepieciešami augsti spriegumi. Piemēram, bistabilos LCD, kuros izkliedējošs (ieslēgts) un dzidrs (izslēgts) stāvoklis tiek iegūts ar dažādu frekvenču maiņsprieguma palīdzību, elektriskā lauka intensitāte šķidrā kristāla slānī var sasniegt pat 10 V/μm. Augstās elektriskā lauka intensit

  6. New lightning current resistant low voltage limiting device for DC railway systems; Neue blitzstromtragfaehige Niederspannungsbegrenzungseinrichtung zum Potenzialschutz von Gleichstrombahnsystemen

    Energy Technology Data Exchange (ETDEWEB)

    Rocks, A.; Hinrichsen, V. [Technische Univ. Darmstadt (Germany). Fachgebiet Hochspannungstechnik; Richter, B. [ABB Schweiz AG, Wettingen (Switzerland); Zayer, H. [ESN Bahngeraete GmbH, Mannheim (Germany)

    2007-07-01

    In dc railway systems, low voltage limiters are applied to limit potential rises in case of failures by forming a permanent short-circuit between return circuit and Earth. These devices can usually carry only moderate lightning currents without permanent failure. In this contribution, a new concept is introduced which provides personal as well as equipment protection by combining a surge arrester and a low voltage limiter in a suited way. (orig.)

  7. The Effect of Current-Limiting Reactors on the Tripping of Short Circuits in High-Voltage Electrical Equipment

    Energy Technology Data Exchange (ETDEWEB)

    Volkov, M. S.; Gusev, Yu. P., E-mail: GusevYP@mpei.ru; Monakov, Yu. V.; Cho, Gvan Chun [National Research University “Moscow Power Engineering Institute,” (Russian Federation)

    2016-01-15

    The insertion of current-limiting reactors into electrical equipment operating at a voltage of 110 and 220 kV produces a change in the parameters of the transient recovery voltages at the contacts of the circuit breakers for disconnecting short circuits, which could be the reason for the increase in the duration of the short circuit, damage to the electrical equipment and losses in the power system. The results of mathematical modeling of the transients, caused by tripping of the short circuit in a reactive electric power transmission line are presented, and data are given on the negative effect of a current-limiting resistor on the rate of increase and peak value of the transient recovery voltages. Methods of ensuring the standard requirements imposed on the parameters of the transient recovery voltages when using current-limiting reactors in the high-voltage electrical equipment of power plants and substations are proposed and analyzed.

  8. A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT

    Science.gov (United States)

    Fu, Qiang; Zhang, Wan-Rong; Jin, Dong-Yue; Zhao, Yan-Xiao; Wang, Xiao

    2016-12-01

    The product of the cutoff frequency and breakdown voltage (fT×BVCEO) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N+-buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of fT×BVCEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness (TBOX) on fT, BVCEO, and the FOM of fT×BVCEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces fT, slightly increases BVCEO to some extent, but ultimately degrades the FOM of fT×BVCEO. Although the fT, BVCEO, and the FOM of fT×BVCEO can be improved by increasing SOI insulator SiO2 layer thickness TBOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick TBOX, a thin N+-buried layer is introduced into collector region to not only improve the FOM of fT×BVCEO, but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N+-buried layer in collector region is investigated in detail. The result show that the FOM of fT×BVCEO is improved and the device temperature decreases as the N+-buried layer shifts toward SOI substrate insulation layer. The approach to introducing a thin N+-buried layer

  9. An Improved Control Strategy of Limiting the DC-Link Voltage Fluctuation for a Doubly Fed Induction Wind Generator

    DEFF Research Database (Denmark)

    Yao, J.; Li, H.; Liao, Y.;

    2008-01-01

    The paper presents to develop a new control strategy of limiting the dc-link voltage fluctuation for a back-to-back pulsewidth modulation converter in a doubly fed induction generator (DFIG) for wind turbine systems. The reasons of dc-link voltage fluctuation are analyzed. An improved control...... strategy with the instantaneous rotor power feedback is proposed to limit the fluctuation range of the dc-link voltage. An experimental rig is set up to valid the proposed strategy, and the dynamic performances of the DFIG are compared with the traditional control method under a constant grid voltage....... Furthermore, the capabilities of keeping the dc-link voltage stable are also compared in the ride-through control of DFIG during a three-phase grid fault, by using a developed 2 MW DFIG wind power system model. Both the experimental and simulation results have shown that the proposed control strategy is more...

  10. CURRENT-VOLTAGE CURVES FOR TREATING EFFLUENT CONTAINING HEDP: DETERMINATION OF THE LIMITING CURRENT

    Directory of Open Access Journals (Sweden)

    T. Scarazzato

    2015-12-01

    Full Text Available Abstract Membrane separation techniques have been explored for treating industrial effluents to allow water reuse and component recovery. In an electrodialysis system, concentration polarization causes undesirable alterations in the ionic transportation mechanism. The graphic construction of the current voltage curve is proposed for establishing the value of the limiting current density applied to the cell. The aim of this work was to determine the limiting current density in an electrodialysis bench stack, the function of which was the treatment of an electroplating effluent containing HEDP. For this, a system with five compartments was used with a working solution simulating the rinse waters of HEDP-based baths. The results demonstrated correlation between the regions defined by theory and the experimental data.

  11. Determination of threshold and maximum operating electric stresses for selected high voltage insulation. Task 3: Investigation of high voltage capacitor insulation

    Science.gov (United States)

    Sosnowski, M.; Eager, G. S., Jr.

    1984-03-01

    The threshold voltage of capacitor insulation was investigated. The experimental work was performed on samples prepared from commercial polypropylene insulated, liquid-filled capacitors. The samples were vacuum-impregnated with the original capacitor insulating liquid obtained from the manufacturer. A limited number of full-size capacitor elements also were tested. Impulse voltage breakdown tests with dc voltage prestressing were performed at room temperature and 75 C. From the results of these tests, the threshold voltage of the samples of the capacitor insulation was determined at both temperatures and that of the whole capacitor elements at room temperature. The threshold voltage of the capacitor insulation was found to be approximately equal to the impulse breakdown voltage. No difference was found between the threshold voltage at room temperature and at 75 C. The threshold voltage of the whole capacitor elements at room temperature was found to be equal to approximately 80% of the threshold voltage of the capacitor insulation samples.

  12. Enhancement of laser-induced breakdown spectroscopy (LIBS) Detection limit using a low-pressure and short-pulse laser-induced plasma process.

    Science.gov (United States)

    Wang, Zhen Zhen; Deguchi, Yoshihiro; Kuwahara, Masakazu; Yan, Jun Jie; Liu, Ji Ping

    2013-11-01

    Laser-induced breakdown spectroscopy (LIBS) technology is an appealing technique compared with many other types of elemental analysis because of the fast response, high sensitivity, real-time, and noncontact features. One of the challenging targets of LIBS is the enhancement of the detection limit. In this study, the detection limit of gas-phase LIBS analysis has been improved by controlling the pressure and laser pulse width. In order to verify this method, low-pressure gas plasma was induced using nanosecond and picosecond lasers. The method was applied to the detection of Hg. The emission intensity ratio of the Hg atom to NO (IHg/INO) was analyzed to evaluate the LIBS detection limit because the NO emission (interference signal) was formed during the plasma generation and cooling process of N2 and O2 in the air. It was demonstrated that the enhancement of IHg/INO arose by decreasing the pressure to a few kilopascals, and the IHg/INO of the picosecond breakdown was always much higher than that of the nanosecond breakdown at low buffer gas pressure. Enhancement of IHg/INO increased more than 10 times at 700 Pa using picosecond laser with 35 ps pulse width. The detection limit was enhanced to 0.03 ppm (parts per million). We also saw that the spectra from the center and edge parts of plasma showed different features. Comparing the central spectra with the edge spectra, IHg/INO of the edge spectra was higher than that of the central spectra using the picosecond laser breakdown process.

  13. Exp erimental study on breakdown voltage b etween parallel plates in high-pressure helium%高压氦气平行极板击穿电压实验研究∗

    Institute of Scientific and Technical Information of China (English)

    岳姗; 刘兴男; 时振刚

    2015-01-01

    为获得高温气冷堆核电站电气设备绝缘设计所需基础数据,本文设计了一套测量高压氦气绝缘性能的装置.利用该装置进行了15—20◦C,0.1—7 MPa氦气,间距0.25,0.35,0.5 mm平行极板击穿实验.实验表明:氦气的绝缘性能远低于空气;气压越高,氦气的击穿电压越大,3.0 MPa氦气的击穿电压与常压空气基本一致;根据低气压实验数据和巴申定律推导的公式,在高气压下计算值偏大,且偏差随着气压和间距乘积的增大不断增大;提出了可计算0.1—7 MPa氦气击穿电压的简易公式,同时修正了高气压氦气的巴申公式,并进行了理论分析.%To obtain the base data for insulation design of the electrical equipment used in the high temperature gas cooled reactor nuclear power plant, an experimental apparatus for testing helium insulation property under high pressure is designed. The apparatus is composed of a pressure vessel, a heating system, an electrical penetration assembly, a vacuum pump, a pressure gauge, a safety pressure valve, a release valve, and a helium bottle. The highest pressure that the vessel can hold is 10 MPa, and in this experiment the safety pressure valve is set to be 8 MPa. The temperature inside the vessel can be heated to 200 ◦C by a heating system. The resolution of the pressure gauge is 1 kPa, and the highest pressure that the gauge can measure is 9.999 MPa. The purity of the helium used in this experiment is 99.999%. The breakdown voltage of helium gas between two parallel plane electrodes is measured by the apparatus under the conditions of 15–20 ◦C and 0.1–7 MPa. The electrodes are made of copper, and their diameters are both 100 mm. The distances between the parallel electrodes are 0.25 mm, 0.35 mm and 0.5 mm respectively. The error of the distance is less than 0.01 mm. The DC voltage between the electrodes is supplied by GPI-735A, a withstand voltage and insulation tester produced by GW Instek

  14. A Versatile Control Scheme For Dynamic Voltage Restorer To Limit Downstream Fault Currents

    Directory of Open Access Journals (Sweden)

    A.Nagendra

    2014-12-01

    Full Text Available The Dynamic Voltage Restorer (DVR is a custom power device utilized to counteract voltage sags. It injects controlled three-phase ac voltages in series with the supply voltage, subsequent to voltage sag, to enhance voltage quality by adjusting the voltage magnitude, wave shape, and phase angle. The DVR is conventionally bypassed during a downstream fault to prevent potential adverse impacts on the fault and to protect the DVR components against the fault current. This paper proposes an augmented control strategy for the DVR that provides:1 voltage-sag compensation under balanced and unbalanced conditions and 2 a fault current interruption (FCI function. This paper introduces and evaluates an auxiliary control strategy for downstream fault current interruption in a radial distribution line by means of a dynamic voltage restorer (DVR. The proposed controller supplements the voltage-sag compensation control of the DVR. It does not require phaselocked loop and independently controls the magnitude and phase angle of the injected voltage for each phase. Fast least error squares digital filters are used to estimate the magnitude and phase of the measured voltages and effectively reduce the impacts of noise, harmonics, and disturbances on the estimated phasor parameters, and this enables effective fault current interrupting even under arcing fault conditions. The performance of the DVR for fault current interruption is analyzed by using MATLAB/SIMULINK software.

  15. 50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

    KAUST Repository

    Emira, Ahmed

    2012-10-06

    In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

  16. Control model design to limit DC-link voltage during grid fault in a dfig variable speed wind turbine

    Science.gov (United States)

    Nwosu, Cajethan M.; Ogbuka, Cosmas U.; Oti, Stephen E.

    2017-08-01

    This paper presents a control model design capable of inhibiting the phenomenal rise in the DC-link voltage during grid- fault condition in a variable speed wind turbine. Against the use of power circuit protection strategies with inherent limitations in fault ride-through capability, a control circuit algorithm capable of limiting the DC-link voltage rise which in turn bears dynamics that has direct influence on the characteristics of the rotor voltage especially during grid faults is here proposed. The model results so obtained compare favorably with the simulation results as obtained in a MATLAB/SIMULINK environment. The generated model may therefore be used to predict near accurately the nature of DC-link voltage variations during fault given some factors which include speed and speed mode of operation, the value of damping resistor relative to half the product of inner loop current control bandwidth and the filter inductance.

  17. Voltage Quality Enhancement and Fault Current Limiting with Z-Source based Series Active Filter

    Directory of Open Access Journals (Sweden)

    F. Gharedaghi

    2011-11-01

    Full Text Available In this study, series active filter or dynamic voltage restorer application is proposed for reduction of downstream fault current in addition to voltage quality enhancement. Recently, the application of Z-source inverter is proposed in order to optimize DVR operation. This inverter makes DVR to operate appropriately when the energy storage device’s voltage level severely falls. Here, the Z-source inverter based DVR is proposed to compensate voltage disturbance at the PCC and to reduce the fault current in downstream of DVR. By calculating instantaneous current magnitude in synchronous frame, control system recognizes if the fault exists or not, and determines whether DVR should compensate voltage disturbance or try to reduce the fault current. The proposed system is simulated under voltage sag and swell and short circuit conditions. The simulation results show that the system operates correctly under voltage sag and short circuit conditions.

  18. Simple voltage-controlled current source for wideband electrical bioimpedance spectroscopy: circuit dependences and limitations

    Science.gov (United States)

    Seoane, F.; Macías, R.; Bragós, R.; Lindecrantz, K.

    2011-11-01

    In this work, the single Op-Amp with load-in-the-loop topology as a current source is revisited. This circuit topology was already used as a voltage-controlled current source (VCCS) in the 1960s but was left unused when the requirements for higher frequency arose among the applications of electrical bioimpedance (EBI). The aim of the authors is not only limited to show that with the currently available electronic devices it is perfectly viable to use this simple VCCS topology as a working current source for wideband spectroscopy applications of EBI, but also to identify the limitations and the role of each of the circuit components in the most important parameter of a current for wideband applications: the output impedance. The study includes the eventual presence of a stray capacitance and also an original enhancement, driving with current the VCCS. Based on the theoretical analysis and experimental measurements, an accurate model of the output impedance is provided, explaining the role of the main constitutive elements of the circuit in the source's output impedance. Using the topologies presented in this work and the proposed model, any electronic designer can easily implement a simple and efficient current source for wideband EBI spectroscopy applications, e.g. in this study, values above 150 kΩ at 1 MHz have been obtained, which to the knowledge of the authors are the largest values experimentally measured and reported for a current source in EBI at this frequency.

  19. Big Bang-Big Crunch Algorithm for Voltage Stability Limit Improvement by Coordinated Control of SVC Settings

    Directory of Open Access Journals (Sweden)

    S. Sakthivel

    2013-07-01

    Full Text Available Modern power system networks are operated under highly stressed conditions and there is a risk of voltage instability problems owing to increased load demand. A power system needs to be with sufficient voltage stability margin for secured operation. In this study, SVC parameters of location and size along with generator bus voltages, transformer tap settings are considered as control parameters for voltage stability limit improvement by minimizing loss and voltage deviation. The control parameters are varied in a coordinated manner for better results. The line based LQP voltage stability indicator is used for voltage stability assessment. The nature inspired meta heuristic Big Bang-Big Crunch (BB-BC algorithm is exploited for optimization of the control variables and the performance is compared with that of PSO algorithm. The effectiveness of the proposed algorithm is tested on the standard IEEE 30 bus system under normal and N-1 line outage contingency conditions. The results obtained from the simulation encourage the performances of the new algorithm.

  20. Pressure and gap length dependence of gap breakdown voltage and discharge current of discharge-pumped KrF excimer laser. Hoden reiki KrF laser no zetsuen hakai den prime atsu to reiki denryu no atsuryoku, gap cho izon sei

    Energy Technology Data Exchange (ETDEWEB)

    Yukimura, K.; Kawakami, H. (Doshisha Univ., Tokyo (Japan)); Hitomi, K. (Kyoto Polytechnic College, Kyoto (Japan))

    1991-04-20

    On the gap destruction characteristics of UV-preionized discharge-pumped KrF excimer laser (charge transfer type) and the electric characteristics of the excited discharge, studies were made by changing the pressure (1.5-3 atm) and the discharge gap length (14-21 mm) of the discharge medium. (1) Gap breakdown voltage and the maximum current of the excited discharge give a similarity by a product of pressure and the gap length at the charge volatge. (2) Insulation breakdown of the gap occurs at the wave front of the applied voltage and the breakdown time gets delayed by the decreasing voltage applied. By setting the ionization index at constant value 20, the gap breakdown voltage is estimated at the error within 10%. (3) The relation between the maximum current, pressure and the gap length product changes the characteristics by the charge voltage of the primary condenser. With the result combined with the standardization of voltage/current of the excited discharge, the electric characteristics at the specific pressure and gap length can be readily known. 10 refs., 10 figs.

  1. Electrical breakdown experiments with application to alkali metal thermal-to-electric converters

    Energy Technology Data Exchange (ETDEWEB)

    Momozaki, Y.; El-Genk, M.S. [The University of New Mexico, Albuquerque, NM (United States). Institute for Space and Nuclear Power Studies and Department of Chemical and Nuclear Engineering

    2003-04-01

    Electrical breakdown in alkali metal thermal-to-electric converters (AMTECs) limits the number of solid electrolytes that could be connected in series and, hence, the output voltage. Experiments are conducted to measure the DC electrical breakdown voltage in cesium vapor between two planar molybdenum electrodes, 1.6 cm in diameter, separated by a 0.5 mm gap, and relate the results to potential electrical breakdown on the cathode side of AMTECs. Two sets of experiments are conducted. In the first set, in which the electrodes are kept at 560 and 650 K and the cesium pressure varied from 0.71 to 29 Pa, when the cooler electrode is positively biased, breakdown occurs at {approx}500 V. When the cooler electrode is negatively biased, breakdown occurs at 700 V. In the second set of experiments, in which the electrodes are held at 625 and 1100 K and the cesium pressure varied from 1.7 to 235 Pa, when the cooler electrode is positively biased, the breakdown voltage is <4 V but in excess of 400 V when the cooler electrode is negatively biased. Because the first ionization potential (3.89 V) and the ionization rate constant of cesium are lower and higher, respectively, than for sodium (5.14 V) and potassium (4.34 V) vapors, the DC electrical breakdown voltage in AMTECs with either a potassium or a sodium working fluid is expected to be higher than measured in this work for cesium vapor. In such converters, the wall should be negatively biased relative to the highest voltage cathode in order to avoid electrical breakdown up to 400 V, or even higher. (author)

  2. Dielectric breakdown of cell membranes.

    Science.gov (United States)

    Zimmermann, U; Pilwat, G; Riemann, F

    1974-11-01

    With human and bovine red blood cells and Escherichia coli B, dielectric breakdown of cell membranes could be demonstrated using a Coulter Counter (AEG-Telefunken, Ulm, West Germany) with a hydrodynamic focusing orifice. In making measurements of the size distributions of red blood cells and bacteria versus increasing electric field strength and plotting the pulse heights versus the electric field strength, a sharp bend in the otherwise linear curve is observed due to the dielectric breakdown of the membranes. Solution of Laplace's equation for the electric field generated yields a value of about 1.6 V for the membrane potential at which dielectric breakdown occurs with modal volumes of red blood cells and bacteria. The same value is also calculated for red blood cells by applying the capacitor spring model of Crowley (1973. Biophys. J. 13:711). The corresponding electric field strength generated in the membrane at breakdown is of the order of 4 . 10(6) V/cm and, therefore, comparable with the breakdown voltages for bilayers of most oils. The critical detector voltage for breakdown depends on the volume of the cells. The volume-dependence predicted by Laplace theory with the assumption that the potential generated across the membrane is independent of volume, could be verified experimentally. Due to dielectric breakdown the red blood cells lose hemoglobin completely. This phenomenon was used to study dielectric breakdown of red blood cells in a homogeneous electric field between two flat platinum electrodes. The electric field was applied by discharging a high voltage storage capacitor via a spark gap. The calculated value of the membrane potential generated to produce dielectric breakdown in the homogeneous field is of the same order as found by means of the Coulter Counter. This indicates that mechanical rupture of the red blood cells by the hydrodynamic forces in the orifice of the Coulter Counter could also be excluded as a hemolysing mechanism. The detector

  3. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on dipolar copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede;

    2014-01-01

    Dielectric elastomers (DES) are a promising new transducer technology, but high driving voltages limit their current commercial potential. One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric permi......-4-nitrobenzene. Here, a high increase in dielectric permittivity (similar to 70%) was obtained without compromising other favourable DE properties such as elastic modulus, gel fraction, dielectric loss and electrical breakdown strength. © 2014 Elsevier Ltd. All rights reserved....

  4. Experimental results with an optimized magnetic field configuration for JET breakdown

    NARCIS (Netherlands)

    Albanese, R.; Maviglia, F.; Lomas, P. J.; Manzanares, A.; Mattei, M.; Neto, A.; Rimini, F. G.; de Vries, P. C.; JET-EFDA Contributors,

    2012-01-01

    Experiments and modelling have been carried out to optimize the magnetic field null during breakdown at JET. Such optimization may prove to be essential for reliable plasma initiation at low voltages, e.g. in ITER where the value of the electric field available will be limited to 0.33 V&

  5. On exponential growth [of gas breakdown

    DEFF Research Database (Denmark)

    McAllister, Iain Wilson

    1991-01-01

    The agreement obtained between measured breakdown voltages and predicted breakdown values is frequently used as a means of assessing the validity of the theory/model in question. However, owing to the mathematical nature of exponential growth, it is easy to formulate a criterion that provides...

  6. Limitations on the open-circuit voltage imposed by P/+/ and N/+/ regions in silicon solar cells

    Science.gov (United States)

    Shibib, M. A.; Fossum, J. G.

    1981-02-01

    It is shown theoretically and experimentally that the emitter recombination current, which limits the open-circuit voltage of silicon solar cells, can be more easily suppressed in P(+)N cells than in N(+)P cells. This result is due to fundamental effects that occur in heavily doped silicon: degeneracy of the majority charge carriers, Auger recombination, and energy-band-gap narrowing. Cell designs to suppress the emitter current are discussed, and experimental data supporting our theoretical analysis are presented.

  7. Factors limiting the open-circuit voltage in microcrystalline silicon solar cells

    Directory of Open Access Journals (Sweden)

    Chatterjee P.

    2011-11-01

    Full Text Available In studying photovoltaic devices made with silicon thin films and considering them according to their grain size, it is curious that as the crystalline fraction increases, the open-circuit voltage (Voc – rather than approaching that of the single-crystal case – shows a decline. To gain an insight into this behavior, observed in hydrogenated microcrystalline silicon (μc-Si:H solar cells prepared under a variety of deposition conditions, we have used a detailed electrical-optical computer modeling program, ASDMP. Two typical μc-Si:H cells with low (~79% and higher (~93% crystalline volume fractions (Fc, deposited in our laboratory and showing this general trend, were modeled. From the parameters extracted by simulation of their experimental current density – voltage and quantum efficiency characteristics, it was inferred that the higher Fc cell has both a higher band gap defect density as well as a lower band gap energy. Our calculations reveal that the proximity of the quasi-Fermi levels to the energy bands in cells based on highly crystallized μc-Si:H (assumed to have a lower band gap, results in both higher free and trapped carrier densities. The trapped hole population, that is particularly high near the P/I interface, results in a strong interface field, a collapse of the field in the volume, and hence a lower open-circuit voltage. Interestingly enough, we were able to fabricate fluorinated μc-Si:H:F cells having 100% crystalline fraction as well as very large grains, that violate the general trend and show a higher Voc. Modeling indicates that this is possible for the latter case, as also for a crystalline silicon PN cell, in spite of a sharply reduced band gap, because the lower effective density of states at the band edges and a sharply reduced gap defect density overcome the effect of the lower band gap.

  8. Determining interface properties limiting open-circuit voltage in heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Brandt, Riley E. [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA; Mangan, Niall M. [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA; Li, Jian V. [National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA; Lee, Yun Seog [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA; Buonassisi, Tonio [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

    2017-05-09

    The development of new thin-film photovoltaic (PV) absorbers is often hindered by the search for an optimal heterojunction contact; an unoptimized contact may be mistaken for poor quality of the underlying absorber, making it difficult to assess the reasons for poor performance. Therefore, quantifying the loss in device efficiency and open-circuit voltage (VOC) as a result of the interface is a critical step in evaluating a new material. In the present work, we fabricate thin-film PV devices using cuprous oxide (Cu2O), with several different n-type heterojunction contacts. Their current-voltage characteristics are measured over a range of temperatures and illumination intensities (JVTi). We quantify the loss in VOC due to the interface and determine the effective energy gap at the interface. The effective interface gap measured by JVTi matches the gap measured by X-ray photoelectron spectroscopy, albeit with higher energy resolution and an order of magnitude faster. We discuss potential artifacts in JVTi measurements and areas where analytical models are insufficient. Applying JVTi to complete devices, rather than incomplete material stacks, suggests that it can be a quick, accurate method to assess the loss due to unoptimized interface band offsets in thin-film PV devices.

  9. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  10. Dielectric-breakdown and conduction-mechanism in a thinned alkali-free glass

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hoikwan; Lanagan, Michael T. [The Pennsylvania State University, University Park, PA (United States)

    2014-10-15

    The leakage current in alkali-free glass was analyzed to understand the dielectric breakdown behavior and the potential conduction mechanism. The dielectric breakdown strength and the leakage current were increased after the thickness of the glass had been recuded. To identify the predominant conduction mechanism, we carefully interpreted the dc voltage-current curves via fitting with various conduction mechanisms, e.g., Poole-Frenkel emission, Schottky emission, space charge-limited current, and hopping conduction. The result suggested that the space-charge-limited current and the hopping conduction of thermally-excited carriers were the most likely mechanisms of conduction in alkali-free glass.

  11. Ac and Impulse Breakdown of Liquid Nitrogen at 77 K for Quasi-Uniform Field Gaps

    Science.gov (United States)

    James, D. R.; Sauers, I.; Ellis, A. R.; Schwenterly, S. W.; Tuncer, E.; Pleva, E.

    2008-03-01

    Liquid nitrogen (LN2) is commonly used both as a coolant and electrical insulation in high temperature superconductor (HTS) equipment for power applications. Hence it is necessary to know the electrical breakdown characteristics of LN2 under a variety of practical conditions. The ac breakdown and positive and negative polarity breakdown results for lightning impulse (1.2 microsecond rise time/50 microsecond fall time) are presented for LN2 using sphere to plane electrode geometry for sphere diameters of 50.8 and 101.6 mm over a gap range of 1 to 15 mm. Voltages up to 110 kVrms were studied for ac breakdown and up to 500-kV peak for impulse. In this work both the ac and impulse breakdown voltages scale approximately with distance over the limited gaps studied which is indicative of a quasi-uniform (near-uniform) electric field between sphere and plane. These measurements were conducted in a dewar which could be pressurized from 1 to 2 bar absolute which greatly reduces the spontaneous formation of bubbles that can occur in open LN2 bath experiments and thus potentially reduce the breakdown strength. Results from the pressurized system and near atmospheric pressure similar to an open bath are compared.

  12. Fault Ride Though Control of Photovoltaic Grid-connected Inverter with Current-limited Capability under Offshore Unbalanced Voltage Conditions

    DEFF Research Database (Denmark)

    Liu, Wenzhao; Guo, Xiaoqiang; Savaghebi, Mehdi;

    2016-01-01

    of the excessive current phenomenon with the conventional fault ride through control is discussed. The quantitative analysis of the current peak value is conducted and a new current-limiting control strategy is proposed to achieve the flexible power control and successful fault ride through in a safe current......The photovoltaic (PV) inverter installed on board experiences the excessive current stress in case of the offshore unbalanced voltage fault ride through (FRT), which significantly affects the operation reliability of the power supply system. In order to solve the problem, the inherent mechanism...

  13. Flexible Power Regulation and Current-limited Control of Grid-connected Inverter under Unbalanced Grid Voltage Faults

    DEFF Research Database (Denmark)

    Guo, Xiaoqiang; Liu, Wenzhao; Lu, Zhigang

    2017-01-01

    The grid-connected inverters may experience excessive current stress in case of unbalanced grid voltage Fault Ride Through (FRT), which significantly affects the reliability of the power supply system. In order to solve the problem, the inherent mechanisms of the excessive current phenomenon...... with the conventional FRT solutions are discussed. The quantitative analysis of three phase current peak values are conducted and a novel current-limited control strategy is proposed to achieve the flexible active and reactive power regulation and successful FRT in a safe current operation area with the aim...

  14. Improving Transient Recovery voltage of circuit breaker using Fault Current Limiter

    Directory of Open Access Journals (Sweden)

    Amir Heidary

    2012-12-01

    Full Text Available This study investigates influence of Fault Current Limiter (FCL on short-circuits current level of substation bus bar splitter circuit breaker and its TRV. An approach for TRV evaluation is developed and applied for proposed power system as shown in this study. FCL circuit is connected to the power system in order to limit TRV. The limiter circuit consists of two equal windings which are turned around unique magnetic core. One of the windings is connected in series with the power system network and the other is connected to the network via series capacitor and power electronic switches. During normal operating condition, both tyristors are in on state and current of the primary and secondary windings are equal. This causes zero impedance of the limiter. During fault, faults current cause the power electronic switch to turn off which increases the limiter impedance. By increasing the limiter impedance, amplitude of TRV decreases substantially. The novel method presented in this study is a cheap and successful scheme.

  15. Limits to foundation displacement of an extra high voltage transmission tower in a mining subsidence area

    Institute of Scientific and Technical Information of China (English)

    Shu Qianjin; Yuan Guanglin; Guo Guangli; Zhang Yunfei

    2012-01-01

    Given the background of a transmission tower erected on a particular mining subsidence area,we used finite element modeling to analyze the anti-deformation performance of transmission towers under a number of different load conditions,including horizontal foundation displacement,uneven vertical downward displacement,wind loads and icing conditions.The results show that the failure in stability of a single steel angle iron represents the limit of the tower given ground deformation.We calculated the corresponding limits of foundation displacements.The results indicate that compression displacement of the foundation is more dangerous than tension displacement.Under complex foundation displacement conditions,horizontal foundation displacement is a key factor leading to failure in the stability of towers.Under conditions of compression or tension displacement of the foundation,wind load becomes the key factor.Towers do not fail when foundation displacements are smaller than 1% (under tension) or 0.5% (under horizontal compression or single foundation subsidence) of the distance between two supports.

  16. Development and Testing of a Transmission Voltage SuperLimiter™ Fault Current Limiter

    Energy Technology Data Exchange (ETDEWEB)

    Romanosky, Walter [American Superconductor Corporation, Devens, MA (United States)

    2012-09-01

    This report summarizes work by American Superconductor (AMSC), Los Alamos National Laboratory (LANL), Nexans, Siemens and Southern California Edison on a 138kV resistive type high temperature superconductor (HTS) fault current limiter (FCL) under a cooperative agreement with the U.S. Department of Energy (DOE). Phase 1A encompassed core technology development and system design and was previously reported (see summary that follows in Section 1.1 of the Introduction). This report primarily discusses work performed during Phase 1B, and addresses the fabrication and test of a single-phase prototype FCL. The results are presented along with a discussion of requirements/specifications and lessons learned to aid future development and product commercialization.

  17. Development, Testing and Installation of a Superconducting Fault Current Limiter for Medium Voltage Distribution Networks

    Science.gov (United States)

    Martini, Luciano; Bocchi, Marco; Ascade, Massimo; Valzasina, Angelo; Rossi, Valerio; Angeli, Giuliano; Ravetta, Cesare

    Since 2009 Ricerca sul Sistema Energetico (RSE S.p.A.) has been involved in the design of resistive-type Superconducting Fault Current Limiter (SFCL) for MV applications to be installed in the A2A Reti Elettriche S.p.A distribution grid in the Milano area. The project started with simulations, design and testing activities for a singlephase device; in this paper we report on the successive step, which is concerned with developing, testing and installation at the hosting utility of the final three-phase SFCL prototype. The result of this research activity is a resistive-type 9 kV/3.4 MVA SFCL device, based on first generation (1G) BSCCO tapes, developed by RSE in the framework of a R&D national project. Owing to the positive test results of partial discharge, dielectric and shortcircuit results the three-phase SFCL device is being to be installed in the A2A distribution grid in the Milano area and it is going to be soon energized starting a one-year long field-testing activity.

  18. Electrodynamic thermal breakdown of a capacitor insulator

    Science.gov (United States)

    Emel'Yanov, O. A.

    2011-11-01

    A mechanism of the electrical breakdown is proposed for modern metal-field capacitors with the well-known property of self-healing of the breakdown strength. Upon an increase in the working voltage, the self-healing time increases to tens of microseconds, and the heating of adjacent insulator layers becomes significant. The propagating thermally activated conduction wave facilitates the enhancement of the electric field up to breakdown values. Analysis of the dynamics of electric field increase is carried out for capacitors based on polyethylene terephthalate (PET) dielectric.

  19. Field emission driven direct current argon discharges and electrical breakdown mechanism across micron scale gaps

    Science.gov (United States)

    Matejčik, Štefan; Radjenović, Branislav; Klas, Matej; Radmilović-Radjenović, Marija

    2015-11-01

    In this paper results of the experimental and theoretical studies of the field emission driven direct current argon microdischarges for the gaps between 1 μm and 100 μm are presented and discussed. The breakdown voltage curves and Volt-Ampere characteristics proved to be a fertile basis providing better understanding of the breakdown phenomena in microgaps. Based on the measured breakdown voltage curves, the effective yields have been estimated confirming that the secondary electron emission due to high electric field generated in microgaps depends primarily on the electric field leading directly to the violation of the Paschen's law. Experimental data are supported by the theoretical predictions that suggest departure from the scaling law and a flattening of the Paschen curves at higher pressures confirming that Townsend phenomenology breaks down when field emission becomes the key mechanism leading to the breakdown. Field emission of electrons from the cathode, the space charge effects in the breakdown and distinction between the Fowler-Nordheim field emission and the space charge limited current density are also analyzed. Images and Volt-Ampere characteristics recorded at the electrode gap size of 20 μm indicate the existence of a discharge region similar to arc at the pressure of around 200 Torr has been observed. Contribution to the Topical Issue "Recent Breakthroughs in Microplasma Science and Technology", edited by Kurt Becker, Jose Lopez, David Staack, Klaus-Dieter Weltmann and Wei Dong Zhu.

  20. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  1. An improved low-voltage ride-through performance of DFIG based wind plant using stator dynamic composite fault current limiter.

    Science.gov (United States)

    Gayen, P K; Chatterjee, D; Goswami, S K

    2016-05-01

    In this paper, an enhanced low-voltage ride-through (LVRT) performance of a grid connected doubly fed induction generator (DFIG) has been presented with the usage of stator dynamic composite fault current limiter (SDCFCL). This protection circuit comprises of a suitable series resistor-inductor combination and parallel bidirectional semiconductor switch. The SDCFCL facilitates double benefits such as reduction of rotor induced open circuit voltage due to increased value of stator total inductance and concurrent increase of rotor impedance. Both effects will limit rotor circuit over current and over voltage situation more secured way in comparison to the conventional scheme like the dynamic rotor current limiter (RCL) during any type of fault situation. The proposed concept is validated through the simulation study of the grid integrated 2.0MW DFIG.

  2. Threshold criteria for undervoltage breakdown

    Science.gov (United States)

    Cooley, James E.; Choueiri, Edgar Y.

    2008-05-01

    The conditions under which an externally supplied pulse of electrons will induce breakdown in an undervoltaged, low-gain discharge gap are experimentally and theoretically explored. The minimum number of injected electrons required to achieve breakdown in a parallel-plate gap is measured in argon at pd values of 3-10 Torr m using ultraviolet laser pulses to photoelectrically release electrons from the cathode. This value was found to scale inversely with voltage at constant pd and with pressure within the parameter range explored. A dimensionless theoretical description of the phenomenon is formulated and numerically solved. It is found that a significant fraction of the charge on the plates must be injected for breakdown to be achieved at low gain. It is also found that fewer electrons are required as the gain due to electron-impact ionization (α process) is increased, or as the sensitivity of the α process to electric field is enhanced by increasing the gas pressure. A predicted insensitivity to ion mobility implies that the breakdown is determined during the first electron avalanche when space-charge distortion is greatest.

  3. Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients

    Science.gov (United States)

    Driche, Khaled; Umezawa, Hitoshi; Rouger, Nicolas; Chicot, Gauthier; Gheeraert, Etienne

    2017-04-01

    Diamond has the advantage of having an exceptionally high critical electric field owing to its large band gap, which implies its high ability to withstand high voltages. At this maximum electric field, the operation of Schottky barrier diodes (SBDs), as well as FETs, may be limited by impact ionization, leading to avalanche multiplication, and hence the devices may breakdown. In this study, three of the reported impact ionization coefficients for electrons, αn, and holes, αp, in diamond at room temperature (300 K) are analyzed. Experimental data on reverse operation characteristics obtained from two different diamond SBDs are compared with those obtained from their corresponding simulated structures. Owing to the crucial role played by the impact ionization rate in determining the carrier transport, the three reported avalanche parameters implemented affect the behavior not only of the breakdown voltage but also of the leakage current for the same structure.

  4. Reverse breakdown in long wavelength lateral collection Cd sub x Hg sub 1 sub minus x Te diodes

    Energy Technology Data Exchange (ETDEWEB)

    Elliott, C.T.; Gordon, N.T.; Hall, R.S. (Royal Signals, Malvern, Worcs WR14 3PS, (England) Radar Establishment, Malvern, Worcs WR14 3PS, England (GB)); Crimes, G. (Philips Components, Southampton, Hants S09 7BH, (England))

    1990-03-01

    Long wavelength diodes in Cd{sub {ital x}}Hg{sub 1{minus}{ital x}}Te show large deviations from ideality in their reverse characteristics. The excess currents are attributed in many published papers on band to band tunneling at high reverse bias and to trap assisted tunneling at low reverse bias. Measurements of photocurrent multiplication, current--voltage characteristics, and noise have been made on long wavelength loophole diodes to determine the breakdown mechanism. This has produced strong evidence that the reverse characteristics of good quality diodes of this type are limited by impact ionization. At higher biases, there is evidence of an additional breakdown mechanism, probably tunneling.

  5. Water Dissociation Phenomena on a Bipolar Membrane——Current-voltage Curve in Relation with Ionic Transport and Limiting Current Density

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    The water dissociation mechanism on a bipolar membrane under the electrical field was investigated and characterized in terms of ionic transport and limiting current density. It is considered that the depletion layer exists at the junction of a bipolar membrane, which is coincided with the viewpoint of the most literatures, but we also consider that the thickness and conductivity of this layer is not only related with the increase of the applied voltage but also with the limiting current density. Below the limiting current density, the thickness of the depletion layer keeps a constant and the conductivity decreases with the increase of the applied voltage;while above the limiting current density, the depletion thickness will increase with the increase of the applied voltage and the conductivity keeps a very low constant. Based on the data reported in the literatures and independent determinations, the limiting current density was calculated and the experimental curves Ⅰ- Ⅴ in the two directions were compared with the theoretical calculations. It is demonstrated that above the limiting current density, the experimental results,either in the L-H direction or in the H-L direction, are consistent with the theoretical calculations; below the limiting current density, a slight deviation exists between the experimental and the theoretical results, and between the experimental results in the two directions. The change in Donnan potential due to the asymmetry of the mono-layers and the changes of ionic composition in the two directions is possibly responsible for this deviation.

  6. Electrical breakdown in tissue electroporation.

    Science.gov (United States)

    Guenther, Enric; Klein, Nina; Mikus, Paul; Stehling, Michael K; Rubinsky, Boris

    2015-11-27

    Electroporation, the permeabilization of the cell membrane by brief, high electric fields, has become an important technology in medicine for diverse application ranging from gene transfection to tissue ablation. There is ample anecdotal evidence that the clinical application of electroporation is often associated with loud sounds and extremely high currents that exceed the devices design limit after which the devices cease to function. The goal of this paper is to elucidate and quantify the biophysical and biochemical basis for this phenomenon. Using an experimental design that includes clinical data, a tissue phantom, sound, optical, ultrasound and MRI measurements, we show that the phenomenon is caused by electrical breakdown across ionized electrolysis produced gases near the electrodes. The breakdown occurs primarily near the cathode. Electrical breakdown during electroporation is a biophysical phenomenon of substantial importance to the outcome of clinical applications. It was ignored, until now.

  7. A Low-Power Voltage Limiter/Regulator IC in Standard Thick-Oxide 130 nm CMOS for Inductive Power Transfer Application

    Directory of Open Access Journals (Sweden)

    Stepan Lapshev

    2014-01-01

    Full Text Available This paper presents a novel CMOS low-power voltage limiter/regulator circuit with hysteresis for inductive power transfer in an implanted telemetry application. The circuit controls its rail voltage to the maximum value of 3 V DC employing 100 mV of comparator hysteresis. It occupies a silicon area of only 127 µm × 125 µm using the 130 nm IBM CMOS process. In addition, the circuit dissipated less than 1 mW and was designed using thick-oxide 3.6 V NMOS and PMOS devices available in the process library.

  8. Investigation of the DC vacuum breakdown mechanism

    CERN Document Server

    Descoeudres, A; Calatroni, S; Taborelli, M; Wuensch, W

    2009-01-01

    Breakdowns occurring in rf accelerating structures will limit the ultimate performance of future linear colliders such as the Compact Linear Collider (CLIC). Because of the similarity of many aspects of dc and rf breakdown, a dc breakdown study is underway at CERN to better understand the vacuum breakdown mechanism in a simple setup. Measurements of the field enhancement factor β show that the local breakdown field is constant and depends only on the electrode material. With copper electrodes, the local breakdown field is around 10:8 GV/m, independent of the gap distance. The β value characterizes the electrode surface state, and the next macroscopic breakdown field can be well predicted. In breakdown rate experiments, where a constant field is applied to the electrodes, clusters of consecutive breakdowns alternate with quiet periods. The occurrence and lengths of these clusters and quiet periods depend on the evolution of β. The application of a high field can even modify the electrode surface in the abse...

  9. PE/PVC materials in HV cable jackets. Breakdown voltage of PE/PVC materials; PE/PVC-Materialien in Aussenmaenteln von Hochspannungskabeln. Durchschlagspannung von PE/PVC-Materialien

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Uwe; Xu, Liang; Schufft, Wolfgang [Technische Univ. Chemnitz-Zwickau, Chemnitz (Germany). Fakultaet fuer Elektrotechnik und Informationstechnik

    2010-12-13

    Cables are spaced across increasingly longer distances in HV engineering. Integration of offshore wind farms and the construction of new transmission and distribution grids would be impossible without cables. Voltages and overvoltages in operation are managed according to international standards using overvoltage protection systems. However, there may be instances in which voltage occur that exceed the strength of the cable jacket. (orig.)

  10. Numerical Study on Atmospheric Pressure DBD in Helium: Single-breakdown and Multi-breakdown Discharges%Numerical Study on Atmospheric Pressure DBD in Helium: Single-breakdown and Multi-breakdown Discharges

    Institute of Scientific and Technical Information of China (English)

    王小华; 杨爱军; 荣命哲; 刘定新

    2011-01-01

    A 1-D fluid model for homogeneous dielectric barrier discharge (DBD) in helium is presented, aimed at unraveling the spatial-temporal characteristics of two basic discharge regimes: single-breakdown and multi-breakdown discharges. Discharge currents, gap voltages, charge densities, electron temperature and electric field profiles of the two regimes make it clear that these two regimes are qualitatively different. It is found that the multi-breakdown discharge has a more homogeneous flux on dielectrics compared to the single-breakdown discharge.

  11. Enhanced breakdown strength of multilayered films fabricated by forced assembly microlayer coextrusion

    Energy Technology Data Exchange (ETDEWEB)

    Mackey, Matt; Hiltner, Anne; Baer, Eric [Department of Macromolecular Science and Engineering, Case Western Reserve University, Cleveland, OH 44106-7202 (United States); Flandin, Lionel [LMOPS UMR 5041, CNRS Universite de Savoie, F-73376 Le Bourget Du Lac Cedex (France); Wolak, Mason A; Shirk, James S, E-mail: Anne.Hiltner@cwru.ed [US Naval Research Laboratory, Washington, DC 20375 (United States)

    2009-09-07

    There is a need in electronic systems and pulsed power applications for capacitors with high energy density. From a material standpoint, capacitive energy density improves with increasing dielectric constant and/or breakdown strength. Current state-of-the-art polymeric capacitors are, however, limited in that their dielectric constant is low (2-4). Our approach to improve polymer film capacitors is to combine, through microlayer coextrusion, two polymers with complementary properties: one with a high breakdown strength (polycarbonate) and one with a high dielectric constant (polyvinylidene fluoride-hexafluoropropylene). As opposed to the monolith controls, multilayered films with various numbers of layers and compositions subjected to a pulsed voltage exhibit treeing patterns that hinder the breakdown process. Consequently, substantially enhanced breakdown strengths are measured in the mutilayered films. It is further shown, by varying the overall film thickness, that the charge at the tip of the needle electrode is a key parameter that controls treeing. Based on the acquired data, a breakdown mechanism is formulated to explain the increased dielectric strengths. Using the understanding gained from these systems, selection and optimization of future layered structures can be carried out to obtain additional property enhancements.

  12. 限流式动态电压恢复器及其参数设计%Dynamic voltage restorer with current limiting function and its parameter design

    Institute of Scientific and Technical Information of China (English)

    唐君华; 涂春鸣; 姜飞; 刘子维; 郭成; 帅智康

    2015-01-01

    为优化电网正常运行时的电能质量,针对电力系统短路故障问题,提出了一种限流式动态电压恢复器(Dynamic voltage restorer with fault current limiting, DVR-FCL)拓扑结构。以限流阻抗值为目标函数,考虑直流侧电压整定的参数设计,给出了 DVR-FCL 的直流侧电压、输出滤波器、串联变压器参数、串联变流器、直流侧电容的整定方法。利用PSCAD/EMTDC仿真软件验证了DVR-FCL对电压跌落及短路故障的动作特性。结果表明,所提拓扑结构和参数设计方法正确,可实现改善电压质量和短路限流的双重功能,保证了电力系统安全性和稳定性。%For the voltage quality optimization under normal power operation, aiming at short-circuit fault in power system, a topology of dynamic voltage restorer with current limiting function (DVR-FCL) is proposed. A parameter design of DVR-FCL based on the objective function of current limiting impedance and the adjustment of DC voltage is introduced. The design methods of the DC link voltage, the output filter, series transformer capacity, the leakage reactance, the series converter and the DC link capacitor are analyzed in detail. The operations of DVR-FCL to voltage sag and short-circuit fault are respectively verified by PSCAD/EMTDC. Simulation results show that the proposed topology and parameters design methods are correct and reasonable, and can effectively realize the double functions of voltage quality improvement and fault current limiting. Thus, it can ensure the security and stability of power system.

  13. Improvement in the Design of Metal-Ceramic High Voltage Feedthroughs for use in High Energy Particle Accelerators

    CERN Document Server

    Weterings, W

    1999-01-01

    Large high-voltage devices operate in particle accelerators to steer charged particles in the desired direction. Solid and hollow rods of sintered alumina are used as insulating supports and high-voltage feedthroughs to power the electrodes of these electrostatic systems. The performance of the systems is often limited by voltage breakdown along the surface of the ceramic insulator (so-called surface flashover) or discharge between feedthrough and vacuum tank, which can lead to significant disruptions in terms of overall machine efficiency. Available results on the influence of the mechanical preparation, thermal history and particular cleaning techniques on commercially obtainable alumina samples have been studied in order to investigate possibilities for better preparation methodology of the insulating supports. Also the influence of the relative position of the feedthrough inside the vacuum tank on the high-voltage breakdown behaviour has been studied. This paper describes the theoretical and practical bac...

  14. Fractal properties of LED avalanche breakdown

    Directory of Open Access Journals (Sweden)

    Antonina S. Shashkina

    2016-12-01

    Full Text Available The conventional model of the processes occurring in the course of a p–n-junction's partial avalanche breakdown has been analyzed in this paper. Microplasma noise spectra of industrially produced LEDs were compared with those predicted by the model. It was established that the data obtained experimentally on reverse-biased LEDs could not be described in terms of this model. The degree to which the fractal properties were pronounced was shown to be variable by changing the reverse voltage. The discovered fractal properties of microplasma noise can serve as the basis for further studies which are bound to explain the breakdown characteristics of real LEDs and to correct the conventional model of p–n-junction's avalanche breakdown.

  15. Quantitative Outgassing studies in DC Electrical breakdown

    CERN Document Server

    Levinsen, Yngve Inntjore; Calatroni, Sergio; Taborelli, Mauro; Wünsch, Walter

    2010-01-01

    Breakdown in the accelerating structures sets an important limit to the performance of the CLIC linear collider. Vacuum degradation and subsequent beam instability are possible outcomes of a breakdown if too much gas is released from the cavity surface. Quantitative data of gas released by breakdowns are provided for copper (milled Cu-OFE, as-received and heat-treated), and molybdenum. These data are produced in a DC spark system based on a capacitance charged at fixed energy, and will serve as a reference for the vacuum design of the CLIC accelerating structures.

  16. Breakdown Study in terms of Gas Temperature

    Science.gov (United States)

    Jung, S. J.; Uhm, H. S.

    2001-10-01

    This paper accounts for the corona discharge which is applied in air pollution purification. It will show elimination of the air pollution produced by the energy use and the optimization of the energy efficiency. The corona discharge forms the plasma state from the gas. Consequently, molecules and atoms in a weakly ionized plasma turn into the excited states, producing active chemical radicals and activating strong chemical reactions. Unburned particles may be generated in imperfect combustion. These particles will convert into harmless gases by activation of these chemical radicals. Outer electrode is composed of stainless steel or copper pipe, and inner electrode is composed of stainless steel stick. Direct current is used as power source. At an atmospheric pressure we measured breakdown voltage for the gases (i.e. nitrogen, air, oxygen) in terms of the radius ratio of two coaxial electrodes at gas temperature ranged from 300K to 1000K. The experimental data are compared with theoretical breakdown voltage.

  17. Surface of Alumina Films after Prolonged Breakdowns in Galvanostatic Anodization

    Directory of Open Access Journals (Sweden)

    Christian Girginov

    2011-01-01

    Full Text Available Breakdown phenomena are investigated at continuous isothermal (20∘C and galvanostatic (0.2–5 mA cm−2 anodizing of aluminum in ammonium salicylate in dimethylformamide (1 M AS/DMF electrolyte. From the kinetic (-curves, the breakdown voltage ( values are estimated, as well as the frequency and amplitude of oscillations of formation voltage ( at different current densities. The surface of the aluminum specimens was studied using atomic force microscopy (AFM. Data on topography and surface roughness parameters of the electrode after electric breakdowns are obtained as a function of anodization time. The electrode surface of anodic films, formed with different current densities until the same charge density has passed (2.5 C cm−2, was assessed. Results are discussed on the basis of perceptions of avalanche mechanism of the breakdown phenomena, due to the injection of electrons and their multiplication in the volume of the film.

  18. High-voltage (> 1 kV) SiC Schottky barrier diodes with low on-resistance

    Energy Technology Data Exchange (ETDEWEB)

    Kimoto, Tsunenobu; Urushidani, Tatsuo; Kobayashi, Sota; Matsunami, Hiroyuki (Kyoto Univ. (Japan). Dept. of Electrical Engineering)

    1993-12-01

    Au/6H-SiC Schottky barrier diodes with high blocking voltages were successfully fabricated using layers grown by step-controlled epitaxy. A breakdown voltage over 1,100 V could be achieved, which is the highest ever reported for silicon carbide (SiC) Schottky barrier diodes. These high-voltage SiC rectifiers had specific on-resistances lower than the theoretical limits of Si rectifiers by more than one order of magnitude. The specific on-resistance increased with temperature according to T[sup 2.0] dependence. The diodes showed good characteristics at temperature as high as 400 C.

  19. Comparative Studies of High-Gradient Rf and Dc Breakdowns

    CERN Document Server

    Kovermann, Jan Wilhelm; Wuensch, Walter

    2010-01-01

    The CLIC project is based on normal-conducting high-gradient accelerating structures with an average accelerating gradient of 100 MV/m. The maximum achievable gradient in these structures is limited by the breakdown phenomenon. The physics of breakdowns is not yet fully understood quantitatively. A full knowledge could have strong impact on the design, material choice and construction of rf structures. Therefore, understanding breakdowns has great importance to reaching a gradient of 100MV/m with an acceptable breakdown probability. This thesis addresses the physics underlying the breakdown effect, focusing on a comparison of breakdowns in rf structures and in a dc spark setup. The dc system is simpler, easier to benchmark against simulations, with a faster turnaround time, but the relationship to rf breakdown must be established. To do so, an experimental approach based on optical diagnostics and electrical measurements methods was made. Following an introduction into the CLIC project, a general theoretical ...

  20. Instrumental Developments for In-situ Breakdown Experiments inside a Scanning Electron Microscope

    CERN Document Server

    Muranaka, T; Leifer, K; Ziemann, V

    2011-01-01

    Electrical discharges in accelerating structures are one of the key issues limiting the performance of future high energy accelerators such as the Compact Linear Collider (CLIC). Fundamental understanding of breakdown phenomena is an indispensable part of the CLIC feasibility study. The present work concerns the experimental study of breakdown using Scanning Electron Microscopes (SEMs). A SEM gives us the opportunity to achieve high electrical gradients of 1\\,kV/$\\mu$m which corresponds to 1\\,GV/m by exciting a probe needle with a high voltage power supply and controlling the positioning of the needle with a linear piezo motor. The gap between the needle tip and the surface is controlled with sub-micron precision. A second electron microscope equipped with a Focused Ion Beam (FIB) is used to create surface corrugations and to sharpen the probe needle to a tip radius of about 50\\,nm. Moreover it is used to prepare cross sections of a voltage breakdown area in order to study the geometrical surface damages as w...

  1. Study of electrical breakdown and secondary pull-in failure modes for NEM relays

    Science.gov (United States)

    Ramezani, M.; Severi, S.; Tilmans, H. A. C.; De Meyer, K.

    2017-01-01

    In this work, two common failure modes of nano-electro-mechanical (NEM) relays: (1) electrical breakdown and (2) stiction due to secondary pull-in were analyzed. These effects are dominant when dimensions of the device are scaled to the sub-micrometer scale. Like MEMS devices, design adjustments, such as introduction of dimples, cannot provide a solution. The geometrical parameters and working environment drive directly the occurrence of these failure modes. The beam length is the key parameter in driving the electrical breakdown while the distance of the gate to the drain, the beam thickness, and the actuation gap set the limits for secondary pull-in voltage. The analysis shows that these failure modes could be mitigated and a physical parameters design space could be identified to achieve NEM devices for high speed operation.

  2. dc breakdown conditioning and breakdown rate of metals and metallic alloys under ultrahigh vacuum

    CERN Document Server

    Descoeudres, A; Calatroni, S; Taborelli, M; Wuensch, W

    2009-01-01

    RF accelerating structures of the Compact Linear Collider (CLIC) require a material capable of sustaining high electric field with a low breakdown rate and low induced damage. Because of the similarity of many aspects of DC and RF breakdown, a DC breakdown study is underway at CERN in order to test candidate materials and surface preparations, and have a better understanding of the breakdown mechanism under ultra-high vacuum in a simple setup. Conditioning speeds and breakdown fields of several metals and alloys have been measured. The average breakdown field after conditioning ranges from 100 MV/m for Al to 850 MV/m for stainless steel, and is around 170 MV/m for Cu which is the present base-line material for CLIC structures. The results indicate clearly that the breakdown field is limited by the cathode. The presence of a thin cuprous oxide film at the surface of copper electrodes significantly increases the breakdown field. On the other hand, the conditioning speed of Mo is improved by removing oxides at t...

  3. Superemitters in Hybrid Photonic Systems: A Simple Lumping Rule for the Local Density of Optical States and its Break-Down at the Unitary Limit

    CERN Document Server

    Frimmer, Martin

    2012-01-01

    We theoretically investigate how the enhancement of the radiative decay rate of a spontaneous emitter provided by coupling to an optical antenna is modified when this "superemitter" is introduced into a complex photonic environment that provides an enhanced local density of optical states (LDOS) itself, such as a microcavity. We show that photonic environments with increased LDOS further boost the performance of antennas that scatter weakly, i.e. that are far from the unitary limit, for which a simple multiplicative LDOS lumping rule holds. In contrast, enhancements provided by antennas close to the unitary limit, i.e. antennas close to the limit of maximally possible scattering strength, are strongly reduced by an enhanced LDOS of the environment. Thus, we identify multiple scattering in hybrid photonic systems as a powerful mechanism for LDOS engineering.

  4. Breakdown of a space charge limited regime of a sheath in a weakly collisional plasma bounded by walls with secondary electron emission.

    Science.gov (United States)

    Sydorenko, D; Kaganovich, I; Raitses, Y; Smolyakov, A

    2009-10-02

    A new regime of plasma-wall interaction is identified in particle-in-cell simulations of a hot plasma bounded by walls with secondary electron emission. Such a plasma has a strongly non-Maxwellian electron velocity distribution function and consists of bulk plasma electrons and beams of secondary electrons. In the new regime, the plasma sheath is not in a steady space charge limited state even though the secondary electron emission produced by the plasma bulk electrons is so intense that the corresponding partial emission coefficient exceeds unity. Instead, the plasma-sheath system performs relaxation oscillations by switching quasiperiodically between the space charge limited and non-space-charge limited states.

  5. Time-lags before breakdown in the DC spark system

    CERN Document Server

    Descoeudres, A

    2008-01-01

    The voltage time evolution in the DC spark system has been measured together with the current signal during a discharge. The voltage rise-time, given by the circuitry and the HV relay is measured to be of the order of 100 ns. Measurement of the time-lags for breakdown reveals a material dependent behaviour; two populations centered at 0.1 s and at 1.3 ms are detected on stainless steel whereas on tungsten carbide only fast occurring sparks with sharp distribution around 0.1 s are found. The two populations indicate the presence of two different breakdown mechanisms.

  6. Understanding and Improving High Voltage Vacuum Insulators for Microsecond Pulses

    Energy Technology Data Exchange (ETDEWEB)

    Javedani, J B; Goerz, D A; Houck, T L; Lauer, E J; Speer, R D; Tully, L K; Vogtlin, G E; White, A D

    2007-03-05

    High voltage insulation is one of the main areas of pulsed power research and development, and dielectric breakdown is usually the limiting factor in attaining the highest possible performance in pulsed power devices. For many applications the delivery of pulsed power into a vacuum region is the most critical aspect of operation. The surface of an insulator exposed to vacuum can fail electrically at an applied field more than an order or magnitude below the bulk dielectric strength of the insulator. This mode of breakdown, called surface flashover, imposes serious limitations on the power flow into a vacuum region. This is especially troublesome for applications where high voltage conditioning of the insulator and electrodes is not practical and for applications where relatively long pulses, on the order of several microseconds, are required. The goal of this project is to establish a sound fundamental understanding of the mechanisms that lead to surface flashover, and then evaluate the most promising techniques to improve vacuum insulators and enable high voltage operation at stress levels near the intrinsic bulk breakdown limits of the material. The approach we proposed and followed was to develop this understanding through a combination of theoretical and computation methods coupled with experiments to validate and quantify expected behaviors. In this report we summarize our modeling and simulation efforts, theoretical studies, and experimental investigations. The computational work began by exploring the limits of commercially available codes and demonstrating methods to examine field enhancements and defect mechanisms at microscopic levels. Plasma simulations with particle codes used in conjunction with circuit models of the experimental apparatus enabled comparisons with experimental measurements. The large scale plasma (LSP) particle-in-cell (PIC) code was run on multiprocessor platforms and used to simulate expanding plasma conditions in vacuum gap regions

  7. 阶梯AlGaN外延新型Al0.25Ga0.75N/GaN HEMTs击穿特性分析%Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layers

    Institute of Scientific and Technical Information of China (English)

    段宝兴; 杨银堂

    2014-01-01

    In order to optimize the surface electric field of AlGaN/GaN high electron mobility transistors (HEMTs), a novel AlGaN/GaN HEMT has been grown with a step AlGaN layer, made for the first time as far as we know, to improve the breakdown voltage. The discipline of the 2DEG concentration varying with the thickness of the AlGaN epitaxy layer has been applied to the new AlGaN/GaN HEMTs with AlGaN/GaN heterostructure. By thinning the AlGaN layer near the gate edge, the 2DEG concentration in the channel is made to form the low concentration region near the gate edge. New electric field peak has appeared at the corner of the step AlGaN layer. The high electric field has been decreased effectively due to the emergence of new electric field peak; this optimizes the surface electric field of the new AlGaN/GaN HEMTs. Then the breakdown voltage is improved to 640 V in the new AlGaN/GaN HEMTs with the step AlGaN layer as compared with 446 V for the conventional structure. In order to let the breakdown curve consistent with the test results, a certain concentration of the acceptor-like traps is added to the GaN buffer to capture the leaking current coming from the source electrode. Simulation results verify the causes for doping acceptor type ions to the GaN buffer, given by foreign researchers. The breakdown curves have been obtained which are consistent with the test results in this paper.%为了优化AlGaN/GaN HEMTs器件表面电场,提高击穿电压,本文首次提出了一种新型阶梯Al-GaN/GaN HEMTs结构.新结构利用AlGaN/GaN异质结形成的2DEG浓度随外延AlGaN层厚度降低而减小的规律,通过减薄靠近栅边缘外延的AlGaN层,使沟道2DEG浓度分区,形成栅边缘低浓度2DEG区,低的2DEG使阶梯AlGaN交界出现新的电场峰,新电场峰的出现有效降低了栅边缘的高峰电场,优化了AlGaN/GaN HEMTs器件的表面电场分布,使器件击穿电压从传统结构的446 V,提高到新结构的640 V.为了获得与实际测试结

  8. Measurement of skeletal muscle collagen breakdown by microdialysis

    DEFF Research Database (Denmark)

    Miller, B F; Ellis, D; Robinson, M M;

    2011-01-01

    Exercise increases the synthesis of collagen in the extracellular matrix of skeletal muscle. Breakdown of skeletal muscle collagen has not yet been determined because of technical limitations. The purpose of the present study was to use local sampling to determine skeletal muscle collagen breakdown...... collagen breakdown 17–21 h post-exercise, and our measurement of OHP using GC–MS was in agreement with traditional assays....

  9. Strongly nonlinear dynamics of electrolytes in large ac voltages

    CERN Document Server

    Olesen, Laurits H; Bruus, Henrik

    2009-01-01

    We study the response of a model micro-electrochemical cell to a large ac voltage of frequency comparable to the inverse cell relaxation time. To bring out the basic physics, we consider the simplest possible model of a symmetric binary electrolyte confined between parallel-plate blocking electrodes, ignoring any transverse instability or fluid flow. We analyze the resulting one-dimensional problem by matched asymptotic expansions in the limit of thin double layers and extend previous work into the strongly nonlinear regime, which is characterized by two novel features - significant salt depletion in the electrolyte near the electrodes and, at very large voltage, the breakdown of the quasi-equilibrium structure of the double layers. The former leads to the prediction of "ac capacitive desalination", since there is a time-averaged transfer of salt from the bulk to the double layers, via oscillating diffusion layers. The latter is associated with transient diffusion limitation, which drives the formation and co...

  10. Electrical breakdown detection system for dielectric elastomer actuators

    Science.gov (United States)

    Ghilardi, Michele; Busfield, James J. C.; Carpi, Federico

    2017-04-01

    Electrical breakdown of dielectric elastomer actuators (DEAs) is an issue that has to be carefully addressed when designing systems based on this novel technology. Indeed, in some systems electrical breakdown might have serious consequences, not only in terms of interruption of the desired function but also in terms of safety of the overall system (e.g. overheating and even burning). The risk for electrical breakdown often cannot be completely avoided by simply reducing the driving voltages, either because completely safe voltages might not generate sufficient actuation or because internal or external factors might change some properties of the actuator whilst in operation (for example the aging or fatigue of the material, or an externally imposed deformation decreasing the distance between the compliant electrodes). So, there is the clear need for reliable, simple and cost-effective detection systems that are able to acknowledge the occurrence of a breakdown event, making DEA-based devices able to monitor their status and become safer and "selfaware". Here a simple solution for a portable detection system is reported that is based on a voltage-divider configuration that detects the voltage drop at the DEA terminals and assesses the occurrence of breakdown via a microcontroller (Beaglebone Black single-board computer) combined with a real-time, ultra-low-latency processing unit (Bela cape an open-source embedded platform developed at Queen Mary University of London). The system was used to both generate the control signal that drives the actuator and constantly monitor the functionality of the actuator, detecting any breakdown event and discontinuing the supplied voltage accordingly, so as to obtain a safer controlled actuation. This paper presents preliminary tests of the detection system in different scenarios in order to assess its reliability.

  11. Electromechanical phase transition in dielectric elastomers under uniaxial tension and electrical voltage

    Science.gov (United States)

    Huang, Rui; Suo, Zhigang

    2012-02-01

    Subject to forces and voltage, a dielectric elastomer may undergo electromechanical phase transition. A phase diagram is constructed for an ideal dielectric elastomer membrane under uniaxial force and voltage, reminiscent of the phase diagram for liquid-vapor transition of a pure substance. We identify a critical point for the electromechanical phase transition. Two states of deformation (thick and thin) may coexist during the phase transition, with the mismatch in lateral stretch accommodated by wrinkling of the membrane in the thin state. The processes of electromechanical phase transition under various conditions are discussed. A reversible cycle is suggested for electromechanical energy conversion using the dielectric elastomer membrane, analogous to the classical Carnot cycle for a heat engine. The amount of energy conversion, however, is limited by failure of the dielectric elastomer due to electrical breakdown. With a particular combination of material properties, the electromechanical energy conversion can be significantly extended by taking advantage of the phase transition without electrical breakdown.

  12. SiC merged p-n/Schottky rectifiers for high voltage applications

    Energy Technology Data Exchange (ETDEWEB)

    Held, R.; Kaminski, N.; Niemann, E. [Daimler-Benz AG, Frankfurt am Main (Germany). Forschung und Technik

    1998-08-01

    A method of reducing reverse currents and increasing breakdown voltages without inducing negative effects on switching behavior in silicon carbide Schottky diodes is proved successfully. Implantation of p-regions in the surface of the n-drift region below the Schottky metal form face to face p-n junctions which screen the Schottky contact from high electrical fields. This results in a reduction of the reverse current and an increase of the breakdown voltage to the limit of a `pure` SiC p-n diode. It is shown, that in contrast to silicon based devices, SiC merged p-n/Schottky (MPS) rectifier preserve their excellent unipolar switching behavior. (orig.) 5 refs.

  13. Analysis of Laser Breakdown Data

    Science.gov (United States)

    Becker, Roger

    2009-03-01

    Experiments on laser breakdown for ns pulses of 532 nm or 1064 nm light in water and dozens of simple hydrocarbon liquids are analyzed and compared to widely-used models and other laser breakdown experiments reported in the literature. Particular attention is given to the curve for the probability of breakdown as a function of the laser fluence at the beam focus. Criticism is made of the na"ive forms of both ``avalanche'' breakdown and multi-photon breakdown. It appears that the process is complex and is intimately tied to the chemical group of the material. Difficulties with developing an accurate model of laser breakdown in liquids are outlined.

  14. Evidence for electronic and ionic limitations at the origin of the second voltage plateau in nickel electrodes, as deduced from impedance spectroscopy measurements

    Energy Technology Data Exchange (ETDEWEB)

    Barde, F.; Tarascon, J.M. [Laboratoire de Reactivite et de Chimie des Solides, Universite de Picardie Jules Verne, CNRS UMR 6007, F-80039 Amiens (France); Taberna, P.L. [CIRIMAT, CNRS UMR 5085, Universite Paul Sabatier, F-31062 Toulouse (France); Palacin, M.R. [Institut de Ciencia de Materials de Barcelona (CSIC), Campus UAB, E-08193 Bellaterra, Catalonia (Spain)

    2008-05-01

    The second plateau occurring during the reduction of the nickel oxyhydroxide electrode (NOE) was studied by impedance spectroscopy on a cell with a pasted electrode prepared from commercial undoped {beta}-Ni(OH){sub 2}. Measurements were performed at diverse states of reduction and a large variation of impedance upon the transition from the first to the second plateau was observed. This variation mainly takes place at low frequencies and is hence related to ionic diffusion. We observed that the impedance becomes more capacitive on the second plateau meaning that the proton diffusion is limited. These results would be consistent with the gradual formation of an insulating layer of nickel hydroxide at the interface between the NOE and the electrolyte upon reduction. Once this layer becomes compact the ionic diffusion would be hindered and forced to occur through this layer, which could explain the voltage drop observed. (author)

  15. Research of Dielectric Breakdown Microfluidic Sampling Chip

    Directory of Open Access Journals (Sweden)

    Feng Jiang

    2013-01-01

    Full Text Available Microfluidic chip is mainly driven electrically by external electrode and array electrode, but there are certain disadvantages in both of ways, which affect the promotion and application of microfluidic technology. This paper discusses a scheme that uses the conductive solution in a microchannel made by PDMS, replacing electrodes and the way of dielectric breakdown to achieve microfluidic chip driver. It could reduce the driving voltage and simplify the chip production process. To prove the feasibility of this method, we produced a microfluidic chip used in PDMS material with the lithography technology and experimented it. The results showed that using the dielectric breakdown to achieve microfluidic chip driver is feasible, and it has certain application prospect.

  16. Investigation of the current break-down phenomena in solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, S.K.; Srinivasamurthy, N.; Agrawal, B.L. [Power Systems Group, ISRO Satellite Centre, Bangalore (India)

    1996-08-15

    Observed reverse current-voltage characteristics of the single crystal silicon and gallium arsenide solar cells have been analyzed. Physical mechanisms behind the junction break-down in silicon cells and current break-down in gallium arsenide cells have been identified. Preliminary estimates of the diffusion capacitance in GaAs cells have been presented

  17. Radiatively heated high voltage pyroelectric crystal pulser

    Energy Technology Data Exchange (ETDEWEB)

    Antolak, A.J., E-mail: antolak@sandia.gov [Sandia National Laboratories, Livermore, CA 94550 (United States); Chen, A.X. [Sandia National Laboratories, Livermore, CA 94550 (United States); Leung, K.-N. [Sandia National Laboratories, Livermore, CA 94550 (United States); Nuclear Engineering Department, University of California, Berkeley (United States); Morse, D.H.; Raber, T.N. [Sandia National Laboratories, Livermore, CA 94550 (United States)

    2014-01-21

    Thin lithium tantalate pyroelectric crystals in a multi-stage pulser were heated by quartz lamps during their charging phase to generate high voltage pulses. The charging voltage was determined empirically based on the measured breakdown voltage in air and verified by the induced breakdown voltage of an external high voltage power supply. A four-stage pyroelectric crystal device generated pulse discharges of up to 86 kV using both quartz lamps (radiative) and thermoelectric (conductive) heating. Approximately 50 mJ of electrical energy was harvested from the crystals when radiatively heated in air, and up to 720 mJ was produced when the crystals were submerged in a dielectric fluid. It is anticipated that joule-level pulse discharges could be obtained by employing additional stages and optimizing the heating configuration.

  18. Beauty in the Breakdown

    Science.gov (United States)

    Brisco, Nicole

    2008-01-01

    Most human beings look at erosion as the destruction of a surface, but artists can see that erosion often creates indefinable beauty. Where do you see beauty in the breakdown? In this article, the author presents an innovative lesson that would allow students to observe both human and physical nature. In this activity students will create a work…

  19. Experimental results of breakdown in "Dena" plasma focus device

    Science.gov (United States)

    Goudarzi, Shervin; Hoseinian, S. M.; Raeisdana, A.

    2014-06-01

    In spite of the intense research activities on Plasma Focus devices, the physics of the initial breakdown and surface discharge phase has not been realized completely. In this paper we have analyzed the surface discharge and initial breakdown phase in Filippov-type Plasma Focus Facility "Dena" (90 kJ, 25 kV) on the base of the current and current derivative measured signals by using Argon, Neon and Krypton as working gases at different discharge voltages and gas pressures, and the effects of working conditions (atomic weight, discharge voltage and gas pressure) on the breakdown and surface discharge phase have expressed. Also, on the base of these results, we have investigated about the relation of this phase with final pinch phase.

  20. The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

    Directory of Open Access Journals (Sweden)

    Donghua Liu

    2015-01-01

    Full Text Available This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD improved by field plate technology. Effect of metal field plate (MFP and polysilicon field plate (PFP on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp = 7.88 ohm * mm2 are achieved.

  1. Novel dielectric reduces corona breakdown in ac capacitors

    Science.gov (United States)

    Loehner, J. L.

    1972-01-01

    Dielectric system was developed which consists of two layers of 25-gage paper separated by one layer of 50-gage polypropylene to reduce corona breakdown in ac capacitors. System can be used in any alternating current application where constant voltage does not exceed 400 V rms. With a little research it could probably be increased to 700 to 800 V rms.

  2. High voltage switches having one or more floating conductor layers

    Energy Technology Data Exchange (ETDEWEB)

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  3. Plasma Discharges in Gas Bubbles in Liquid Water: Breakdown Mechanisms and Resultant Chemistry

    Science.gov (United States)

    Gucker, Sarah M. N.

    The use of atmospheric pressure plasmas in gases and liquids for purification of liquids has been investigated by numerous researchers, and is highly attractive due to their strong potential as a disinfectant and sterilizer. However, the fundamental understanding of plasma production in liquid water is still limited. Despite the decades of study dedicated to electrical discharges in liquids, many physical aspects of liquids, such as the high inhomogeneity of liquids, complicate analyses. For example, the complex nonlinearities of the fluid have intricate effects on the electric field of the propagating streamer. Additionally, the liquid material itself can vaporize, leading to discontinuous liquid-vapor boundaries. Both can and do often lead to notable hydrodynamic effects. The chemistry of these high voltage discharges on liquid media can have circular effects, with the produced species having influence on future discharges. Two notable examples include an increase in liquid conductivity via charged species production, which affects the discharge. A second, more complicated scenario seen in some liquids (such as water) is the doubling or tripling of molecular density for a few molecule layers around a high voltage electrode. These complexities require technological advancements in optical diagnostics that have only recently come into being. This dissertation investigates several aspects of electrical discharges in gas bubbles in liquids. Two primary experimental configurations are investigated: the first allows for single bubble analysis through the use of an acoustic trap. Electrodes may be brought in around the bubble to allow for plasma formation without physically touching the bubble. The second experiment investigates the resulting liquid phase chemistry that is driven by the discharge. This is done through a dielectric barrier discharge with a central high voltage surrounded by a quartz discharge tube with a coil ground electrode on the outside. The plasma

  4. The Electrical Breakdown of Thin Dielectric Elastomers

    DEFF Research Database (Denmark)

    Zakaria, Shamsul Bin; Morshuis, Peter H. F.; Yahia, Benslimane Mohamed

    2014-01-01

    Dielectric elastomers are being developed for use in actuators, sensors and generators to be used in various applications, such as artificial eye lids, pressure sensors and human motion energy generators. In order to obtain maximum efficiency, the devices are operated at high electrical fields....... This increases the likelihood for electrical breakdown significantly. Hence, for many applications the performance of the dielectric elastomers is limited by this risk of failure, which is triggered by several factors. Amongst others thermal effects may strongly influence the electrical breakdown strength....... In this study, we model the electrothermal breakdown in thin PDMS based dielectric elastomers in order to evaluate the thermal mechanisms behind the electrical failures. The objective is to predict the operation range of PDMS based dielectric elastomers with respect to the temperature at given electric field...

  5. Limiter

    Science.gov (United States)

    Cohen, S.A.; Hosea, J.C.; Timberlake, J.R.

    1984-10-19

    A limiter with a specially contoured front face is provided. The front face of the limiter (the plasma-side face) is flat with a central indentation. In addition, the limiter shape is cylindrically symmetric so that the limiter can be rotated for greater heat distribution. This limiter shape accommodates the various power scrape-off distances lambda p, which depend on the parallel velocity, V/sub parallel/, of the impacting particles.

  6. A novel thin drift region device with field limiting rings in substrate

    Institute of Scientific and Technical Information of China (English)

    Li Qi; Zhu Jin-Luan; Wang Wei-Dong; Wei Xue-Ming

    2011-01-01

    A novel thin drift region device with heavily doped N+ rings embedded in the substrate is reported,which is called the field limiting rings in substrate lateral double-diffused MOS transistor (SFLR LDMOS).In the SFLR LDMOS,the peak of the electric field at the main junction is reduced due to the transfer of the voltage from the main junction to other field limiting ring junctions,so the vertical electric field is improved significantly.A model of the breakdown voltage is developed,from which optimal spacing is obtained.The numerical results indicate that the breakdown voltage of the device proposed is increased by 76% in comparison to that of the conventional LDMOS.

  7. The influence of the sand-dust environment on air-gap breakdown discharge characteristics of the plate-to-plate electrode

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    The experiments of plane-plane gap discharge was carried out in an environment of artificial sandstorm. By comparing and analyzing the differences in gap breakdown voltage between the sand & dust environment and clean air, some problems were investigated, such as effects of wind speed and particle concentration on the breakdown voltage, differences of gap discharge characteristics between the dust & sand medium and the clean air medium. The results showed that compared with the clean air environment, the dust & sand environment had a decreased gap breakdown voltage. The longer the gap distance, the greater the voltage drop; the breakdown voltage decreased with the increase of particle concentration in flow. With the increase of wind speed, the breakdown voltage decreased at the beginning and rose afterwards. The results of the paper may helpful for further research regarding the unidentified flashover and external insulation characteristics of the HV power grid in the dust & sand environment.

  8. Simulations of avalanche breakdown statistics: probability and timing

    Science.gov (United States)

    Ng, Jo Shien; Tan, Chee Hing; David, John P. R.

    2010-04-01

    Important avalanche breakdown statistics for Single Photon Avalanche Diodes (SPADs), such as avalanche breakdown probability, dark count rate, and the distribution of time taken to reach breakdown (providing mean time to breakdown and jitter), were simulated. These simulations enable unambiguous studies on effects of avalanche region width, ionization coefficient ratio and carrier dead space on the avalanche statistics, which are the fundamental limits of the SPADs. The effects of quenching resistor/circuit have been ignored. Due to competing effects between dead spaces, which are significant in modern SPADs with narrow avalanche regions, and converging ionization coefficients, the breakdown probability versus overbias characteristics from different avalanche region widths are fairly close to each other. Concerning avalanche breakdown timing at given value of breakdown probability, using avalanche material with similar ionization coefficients yields fast avalanche breakdowns with small timing jitter (albeit higher operating field), compared to material with dissimilar ionization coefficients. This is the opposite requirement for abrupt breakdown probability versus overbias characteristics. In addition, by taking band-to-band tunneling current (dark carriers) into account, minimum avalanche region width for practical SPADs was found to be 0.3 and 0.2 μm, for InP and InAlAs, respectively.

  9. High Voltage Pulse Testing Survey.

    Science.gov (United States)

    1985-10-01

    Cryogenic 23 E. Liquids 26 F. Solids 28 1. Polyethylene 28 2. Cross-Linked Polyethylene ( XLPE ) 29 3. Polyimide and Polyvenylchloride (PVC) 31 VI Benefits 35 A...Strength of XLPE Cables 29 vii * 4" I PROGRAM OBJECTIVES The Pulse Test Survey summarizes government, industry, and technical reports on high voltage pulse...system of silicone oil on a XLPE (cross-linked polyethylene) spacer tends to lower the impulse breakdown by approximately 10 percent. The negative impulse

  10. Work Breakdown Structure (WBS) Handbook

    Science.gov (United States)

    2010-01-01

    The purpose of this document is to provide program/project teams necessary instruction and guidance in the best practices for Work Breakdown Structure (WBS) and WBS dictionary development and use for project implementation and management control. This handbook can be used for all types of NASA projects and work activities including research, development, construction, test and evaluation, and operations. The products of these work efforts may be hardware, software, data, or service elements (alone or in combination). The aim of this document is to assist project teams in the development of effective work breakdown structures that provide a framework of common reference for all project elements. The WBS and WBS dictionary are effective management processes for planning, organizing, and administering NASA programs and projects. The guidance contained in this document is applicable to both in-house, NASA-led effort and contracted effort. It assists management teams from both entities in fulfilling necessary responsibilities for successful accomplishment of project cost, schedule, and technical goals. Benefits resulting from the use of an effective WBS include, but are not limited to: providing a basis for assigned project responsibilities, providing a basis for project schedule development, simplifying a project by dividing the total work scope into manageable units, and providing a common reference for all project communication.

  11. Modeling rf breakdown arcs

    CERN Document Server

    Insepov, Zeke; Huang, Dazhang; Mahalingam, Sudhakar; Veitzer, Seth

    2010-01-01

    We describe breakdown in 805 MHz rf accelerator cavities in terms of a number of mechanisms. We devide the breakdown process into three stages: (1) we model surface failure using molecular dynamics of fracture caused by electrostatic tensile stress, (2) we model the ionization of neutrals responsible for plasma initiation and plasma growth using a particle in cell code, and (3) we model surface damage by assuming a process similar to unipolar arcing. Although unipolar arcs are strictly defined with equipotential boundaries, we find that the cold, dense plasma in contact with the surface produces very small Debye lengths and very high electric fields over a large area. These high fields produce strong erosion mechanisms, primarily self sputtering, compatible with the crater formation that we see. Results from the plasma simulation are included as a guide to experimental verification of this model.

  12. Space Charge Modulated Electrical Breakdown

    Science.gov (United States)

    Li, Shengtao; Zhu, Yuanwei; Min, Daomin; Chen, George

    2016-09-01

    Electrical breakdown is one of the most important physical phenomena in electrical and electronic engineering. Since the early 20th century, many theories and models of electrical breakdown have been proposed, but the origin of one key issue, that the explanation for dc breakdown strength being twice or higher than ac breakdown strength in insulating materials, remains unclear. Here, by employing a bipolar charge transport model, we investigate the space charge dynamics in both dc and ac breakdown processes. We demonstrate the differences in charge accumulations under both dc and ac stresses and estimate the breakdown strength, which is modulated by the electric field distortion induced by space charge. It is concluded that dc breakdown initializes in the bulk whereas ac breakdown initializes in the vicinity of the sample-electrode interface. Compared with dc breakdown, the lower breakdown strength under ac stress and the decreasing breakdown strength with an increase in applied frequency, are both attributed to the electric field distortion induced by space charges located in the vicinity of the electrodes.

  13. Stray voltage mitigation

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

    2008-04-09

    This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

  14. Quantitative statistical analysis of dielectric breakdown in zirconia-based self-assembled nanodielectrics.

    Science.gov (United States)

    Schlitz, Ruth A; Ha, Young-geun; Marks, Tobin J; Lauhon, Lincoln J

    2012-05-22

    Uniformity of the dielectric breakdown voltage distribution for several thicknesses of a zirconia-based self-assembled nanodielectric was characterized using the Weibull distribution. Two regimes of breakdown behavior are observed: self-assembled multilayers >5 nm thick are well described by a single two-parameter Weibull distribution, with β ≈ 11. Multilayers ≤5 nm thick exhibit kinks on the Weibull plot of dielectric breakdown voltage, suggesting that multiple characteristic mechanisms for dielectric breakdown are present. Both the degree of uniformity and the effective dielectric breakdown field are observed to be greater for one layer than for two layers of Zr-SAND, suggesting that this multilayer is more promising for device applications.

  15. Investigation of efficient termination structure for improved breakdown properties of semiconductor radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Krizaj, D.; Resnik, D.; Vrtacnik, D.; Amon, S. [Univ. of Ljubljana (Slovenia). Faculty of Electrical Engineering; Cindro, V. [Jozef Stefan Inst., Ljubljana (Slovenia)

    1998-06-01

    Efficiency of a new junction termination structure for improvement of breakdown properties of semiconductor radiation detectors is investigated. The structure consists of a diffused resistor winding around the active junction in a spiral fashion. The current flow through the spiral enables controlled potential distribution along the spiral turns and thus controlled depletion spreading from the main junction, efficiently preventing premature avalanche breakdown. Both multiple guard-ring structures and spiral junction termination structures have shown good breakdown properties typically three to five times higher than breakdown voltages of diodes without junction termination. The breakdown voltages of spiral junction termination structures are only weakly influenced by changes in substrate doping concentration caused by neutron irradiation. They can thus be considered for termination of future semiconductor radiation detectors.

  16. Investigation of mechanism of breakdown in XLPE cables. Final report

    Energy Technology Data Exchange (ETDEWEB)

    McKean, A.L.

    1976-07-01

    The basic hypothesis that microporosity plays a significant role in the mechanism of breakdown of XLPE cable is explored. The potential improvement achieved by impregnating the microporous regions of the cable core with a neutral liquid is evaluated, with relation to ac voltage life and impulse strength. The effect at higher frequency is also demonstrated. A similar test program is pursued on model cables, designed to explore the effects of gas pressure and gas type on breakdown and life, since it is reasonable to expect that only the microporous regions of the insulation should be sensitive to the gas-pressure environment. Comparison of gas-pressurized model breakdown stress (and related microvoid size) with basic Paschen curves demonstrates reasonably good agreement, indicating that partial discharge is the basic mechanism of fatigue and breakdown. The form of the voltage life curve above and below the discharge inception level is proposed, and evidence is presented indicating breakdown originates in the bulk insulation as well as at the shield interface. It is also shown that model cable discharge energies are below 0.1 pC, even at very high stress, and cannot be measured with modern detectors. Results with liquid or gas impregnation suggest a possible approach to dielectric improvement.

  17. Subnanosecond processes in the stage of breakdown formation in gas at a high pressure

    Science.gov (United States)

    Korolev, Yu. D.; Bykov, N. M.; Ivanov, S. N.

    2008-12-01

    Results are presented from experimental studies of the prebreakdown stage of a discharge in nitrogen at pressures of a few tens of atmospheres, gap voltages higher than 140 kV, and a voltage rise time of about 1 ns. Breakdown occurs at the front of the voltage pulse; i.e., the time of breakdown formation is shorter than the front duration. It is shown that, in gaps with a nonuniform electric field, the breakdown formation time is mainly determined by the time of avalanche development to the critical number of charge carriers. The subsequent stages of breakdown (the development of the ionization wave and the buildup of the conductivity in the weakly conducting channel bridging the gap) turn out to be shorter than this time or comparable to it.

  18. Generalizing Microdischarge Breakdown Scaling Laws for Pressure and Gas

    Science.gov (United States)

    Loveless, Amanda; Garner, Allen

    2016-10-01

    Shrinking device dimensions for micro- and nanoelectromechanical systems necessitates accurate breakdown voltage predictions for reliable operation. Additionally, one must accurately predict breakdown voltage to optimize system geometry for applications in microplasmas and micropropulsion. Traditional approaches use Paschen's law (PL) to predict breakdown, but PL fails at small gap distances ( 15 μm) where field emission dominates. Subsequent work derived scaling laws and analytic expressions for breakdown voltage in argon at atmospheric pressure. Applications at high (e.g. combustion) and low (e.g. vacuum nanoelectronics) pressures for various gases motivate the generalization of these models for pressure and gas. This work addresses these concerns by deriving scaling laws generalized for gap distance, pressure, and gas, while also specifically incorporating and exploring the impact of field enhancement and work function. We compare these analytic scaling laws to experimental data and particle-in-cell simulations. Funded by a U.S. Nuclear Regulatory Commission Nuclear Education Program Faculty Development Grant Program at Purdue University.

  19. Anomalous memory effect in the breakdown of low-pressure argon in a long discharge tube

    Energy Technology Data Exchange (ETDEWEB)

    Meshchanov, A. V.; Korshunov, A. N.; Ionikh, Yu. Z., E-mail: y.ionikh@spbu.ru [St. Petersburg State University (Russian Federation); Dyatko, N. A. [Troitsk Institute for Innovation and Fusion Research (Russian Federation)

    2015-08-15

    The characteristics of breakdown of argon in a long tube (with a gap length of 75 cm and diameter of 2.8 cm) at pressures of 1 and 5 Torr and stationary discharge currents of 5–40 mA were studied experimentally. The breakdown was initiated by paired positive voltage pulses with a rise rate of ∼10{sup 8}–10{sup 9} V/s and duration of ∼1–10 ms. The time interval between pairs was varied in the range of Τ ∼ 0.1–1 s, and that between pulses in a pair was varied from τ = 0.4 ms to ≈Τ/2. The aim of this work was to detect and study the so-called “anomalous memory effect” earlier observed in breakdown in nitrogen. The effect consists in the dynamic breakdown voltage in the second pulse in a pair being higher than in the first pulse (in contrast to the “normal” memory effect, in which the relation between the breakdown voltages is opposite). It is found that this effect is observed when the time interval between pairs of pulses is such that the first pulse in a pair is in the range of the normal memory effect of the preceding pair (under the given conditions, Τ ≈ 0.1–0.4 s). In this case, at τ ∼ 10 ms, the breakdown voltage of the second pulse is higher than the reduced breakdown voltage of the first pulse. Optical observations of the ionization wave preceding breakdown in a long tube show that, in the range of the anomalous memory effect and at smaller values of τ, no ionization wave is detected before breakdown in the second pulse. A qualitative interpretation of the experimental results is given.

  20. VUV Radiation and Breakdown

    Science.gov (United States)

    2011-02-28

    below about 130 nm.   This  leads to  chromatic   aberration  and smaller signal amplitude at short wavelengths as can be seen  in Figure 7.   The  second...the mirrors. It is possible to image the breakdown streamers using the VUV light since there is no chromatic aberration . Such images are shown in

  1. Breakdowns in collaborative information seeking

    DEFF Research Database (Denmark)

    Hertzum, Morten

    2010-01-01

    of the use of the electronic medication record adopted in a Danish healthcare region and of the reports of five years of medication incidents at Danish hospitals. The results show that breakdowns in collaborative information seeking is a major source of medication incidents, that most of these breakdowns......Collaborative information seeking is integral to many professional activities. In hospital work, the medication process encompasses continual seeking for information and collaborative grounding of information. This study investigates breakdowns in collaborative information seeking through analyses...... are breakdowns in collaborative grounding rather than information seeking, that the medication incidents mainly concern breakdowns in the use of records as opposed to oral communication, that the breakdowns span multiple degrees of separation between clinicians, and that the electronic medication record has...

  2. On Preliminary Breakdown

    Science.gov (United States)

    Beasley, W. H.; Petersen, D.

    2013-12-01

    The preliminary breakdown phase of a negative cloud-to-ground lightning flash was observed in detail. Observations were made with a Photron SA1.1 high-speed video camera operating at 9,000 frames per second, fast optical sensors, a flat-plate electric field antenna covering the SLF to MF band, and VHF and UHF radio receivers with bandwidths of 20 MHz. Bright stepwise extensions of a negative leader were observed at an altitude of 8 km during the first few milliseconds of the flash, and were coincident with bipolar electric field pulses called 'characteristic pulses'. The 2-D step lengths of the preliminary processes were in excess of 100 meters, with some 2-D step lengths in excess of 200 meters. Smaller and shorter unipolar electric field pulses were superposed onto the bipolar electric field pulses, and were coincident with VHF and UHF radio pulses. After a few milliseconds, the emerging negative stepped leader system showed a marked decrease in luminosity, step length, and propagation velocity. Details of these events will be discussed, including the possibility that the preliminary breakdown phase consists not of a single developing lightning leader system, but of multiple smaller lightning leader systems that eventually join together into a single system.

  3. Breakdown of interdependent directed networks.

    Science.gov (United States)

    Liu, Xueming; Stanley, H Eugene; Gao, Jianxi

    2016-02-02

    Increasing evidence shows that real-world systems interact with one another via dependency connectivities. Failing connectivities are the mechanism behind the breakdown of interacting complex systems, e.g., blackouts caused by the interdependence of power grids and communication networks. Previous research analyzing the robustness of interdependent networks has been limited to undirected networks. However, most real-world networks are directed, their in-degrees and out-degrees may be correlated, and they are often coupled to one another as interdependent directed networks. To understand the breakdown and robustness of interdependent directed networks, we develop a theoretical framework based on generating functions and percolation theory. We find that for interdependent Erdős-Rényi networks the directionality within each network increases their vulnerability and exhibits hybrid phase transitions. We also find that the percolation behavior of interdependent directed scale-free networks with and without degree correlations is so complex that two criteria are needed to quantify and compare their robustness: the percolation threshold and the integrated size of the giant component during an entire attack process. Interestingly, we find that the in-degree and out-degree correlations in each network layer increase the robustness of interdependent degree heterogeneous networks that most real networks are, but decrease the robustness of interdependent networks with homogeneous degree distribution and with strong coupling strengths. Moreover, by applying our theoretical analysis to real interdependent international trade networks, we find that the robustness of these real-world systems increases with the in-degree and out-degree correlations, confirming our theoretical analysis.

  4. Very Low Frequency Breakdown Properties of Electrical Insulation Materials at Cryogenic Temperatures

    Science.gov (United States)

    Sauers, I.; Tuncer, E.; Polizos, G.; James, D. R.; Ellis, A. R.; Pace, M. O.

    2010-04-01

    For long cables or equipment with large capacitance it is not always possible to conduct high voltage withstand tests at 60 Hz due to limitations in charging currents of the power supply. Very low frequency (typically at a frequency of 0.1 Hz) has been used for conventional cables as a way of getting around the charging current limitation. For superconducting grid applications the same issues apply. However there is very little data at cryogenic temperatures on how materials perform at low frequency compared to 60 Hz and whether higher voltages should be applied when performing a high voltage acceptability test. Various materials including G10 (fiberglass reinforced plastic or FRP), Cryoflex™ (a tape insulation used in some high temperature superconducting cables), kapton (commonly used polyimide), polycarbonate, and polyetherimide, and in liquid nitrogen alone have been tested using a step method for frequencies of 60 Hz, 0.1 Hz, and dc. The dwell time at each step was chosen so that the aging factor would be the same in both the 60 Hz and 0.1 Hz tests. The data indicated that, while there is a small frequency dependence for liquid nitrogen, there are significant differences for the solid materials studied. Breakdown data for these materials and for model cables will be shown and discussed.

  5. Low voltage varistor ceramics based on SnO2

    Indian Academy of Sciences (India)

    S R Dhage; V Ravi; O B Yang

    2007-12-01

    The nonlinear current ()–voltage () characteristics of tin dioxide doped with either Nb2O5 and CoO or Sb2O3 and CoO show promising values of nonlinear coefficient () values (∼11) with low breakdown voltages (B, ∼40 V mm-1). The pentavalent antimony or niobium acts as donor and increases the electronic conductivity. The crucial parameter for obtaining low breakdown voltage is the grain size, which depends upon sintering duration and temperature of these oxide ceramics.

  6. A relationship between statistical time to breakdown distributions and pre-breakdown negative differential resistance at nanometric scale

    Energy Technology Data Exchange (ETDEWEB)

    Foissac, R. [STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble (France); Blonkowski, S.; Delcroix, P. [STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex (France); Kogelschatz, M. [Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble (France)

    2014-07-14

    Using an ultra-high vacuum Conductive atomic force microscopy (C-AFM) current voltage, pre-breakdown negative differential resistance (NDR) characteristics are measured together with the time dependent dielectric breakdown (TDDB) distributions of Si/SiON (1.4 and 2.6 nm thick). Those experimental characteristics are systematically compared. The NDR effect is modelled by a conductive filament growth. It is showed that the Weibull TDDB statistic distribution scale factor is proportional to the growth rate of an individual filament and then has the same dependence on the electric field. The proportionality factor is a power law of the ratio between the surfaces of the CAFM tip and the filament's top. Moreover, it was found that, for the high fields used in those experiments, the TDDB acceleration factor as the growth rate characteristic is proportional to the Zener tunnelling probability. Those observations are discussed in the framework of possible breakdown or forming mechanism.

  7. Air Breakdown During Fires

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    This paper analyzes the different discharge processes occurring at normal temperatures and higl temperatures. The theoretical results show that the net charges in the streamer channel at normal temperatures are zero, but they are positive at high temperatures so that the advancing field is reinforced more than that at normal temperatures. Therefore, the field required for streamer propagation is reduced at high temperatures. The sparkover voltage is largely reduced with increased temperature, which is influenced by the solid materials in the flame.

  8. Comparative study of experimental signals for multipactor and breakdown.

    CERN Document Server

    Dehler, Micha; Wuensch, Walter; Faus-Golfe, Angeles; Gimeno Martinez, Benito; Kovermann, Jan; Boria, Vicente; Raboso, David

    2012-01-01

    Performance limiting high-power rf phenomenon occur in both transmitter systems in satellites and high-gradient accelerating structures in particle accelerators. In satellites the predominant effect is multipactor while in accelerators it is breakdown. Both communities have studied their respective phenomena extensively and developed particular simulation tools and experimental techniques. A series of experiments to directly compare measurements made under multipactor and breakdown conditions has been initiated with the objective to crosscheck and compare the physics, simulation tools and measurement techniques.

  9. Dramatically enhanced electrical breakdown strength in cellulose nanopaper

    Directory of Open Access Journals (Sweden)

    Jianwen Huang

    2016-09-01

    Full Text Available Electrical breakdown behaviors of nanopaper prepared from nanofibrillated cellulose (NFC were investigated. Compared to conventional insulating paper made from micro softwood fibers, nanopaper has a dramatically enhanced breakdown strength. Breakdown field of nanopaper is 67.7 kV/mm, whereas that of conventional paper is only 20 kV/mm. Air voids in the surface of conventional paper are observed by scanning electron microscope (SEM. Further analyses using mercury intrusion show that pore diameter of conventional paper is around 1.7 μm, while that of nanopaper is below 3 nm. Specific pore size of nanopaper is determined to be approximately 2.8 nm by the gas adsorption technique. In addition, theoretical breakdown strengths of nanopaper and conventional paper are also calculated to evaluate the effect of pore size. It turns out that theoretical values agree well with experimental data, indicating that the improved strength in nanopaper is mainly attributed to the decreased pore size. Due to its outstanding breakdown strength, this study indicates the suitability of nanopaper for electrical insulation in ultra-high voltage convert transformers and other electrical devices.

  10. Pulsed electrical breakdown of a void-filled dielectric

    Science.gov (United States)

    Anderson, R. A.; Lagasse, R. R.; Schroeder, J. L.

    2002-05-01

    We report breakdown strengths in a void-filled dielectric material, epoxy containing 48 vol % hollow glass microballoon filler, which is stressed with unipolar voltage pulses of the order of 10 μs duration. The microballoon voids had mean diameters of approximately 40 μm and contained SO2 gas at roughly 30% atmospheric pressure. This void-filled material displays good dielectric strength (of the order of 100 kV mm-1) under these short-pulse test conditions. Results from a variety of electrode geometries are reported, including arrangements in which the electric stress is highly nonuniform. Conventional breakdown criteria based on mean or peak electric stress do not account for these data. A statistics-based predictive breakdown model is developed, in which the dielectric is divided into independent, microballoon-sized "discharge cells" and the spontaneous discharge of a single cell is presumed to launch full breakdown of the composite. We obtain two empirical parameters, the mean and standard deviation of the spontaneous discharge field, by fitting breakdown data from two electrode geometries having roughly uniform fields but with greatly differing volumes of electrically stressed material. This model accounts for many aspects of our data, including the inherent statistical scatter and the dependence on the stressed volume, and it provides informative predictions with electrode geometries giving highly nonuniform fields. Issues related to computational spatial resolution and cutoff distance are also discussed.

  11. Dramatically enhanced electrical breakdown strength in cellulose nanopaper

    Science.gov (United States)

    Huang, Jianwen; Zhou, Yuanxiang; Zhou, Zhongliu; Liu, Rui

    2016-09-01

    Electrical breakdown behaviors of nanopaper prepared from nanofibrillated cellulose (NFC) were investigated. Compared to conventional insulating paper made from micro softwood fibers, nanopaper has a dramatically enhanced breakdown strength. Breakdown field of nanopaper is 67.7 kV/mm, whereas that of conventional paper is only 20 kV/mm. Air voids in the surface of conventional paper are observed by scanning electron microscope (SEM). Further analyses using mercury intrusion show that pore diameter of conventional paper is around 1.7 μ m , while that of nanopaper is below 3 nm. Specific pore size of nanopaper is determined to be approximately 2.8 nm by the gas adsorption technique. In addition, theoretical breakdown strengths of nanopaper and conventional paper are also calculated to evaluate the effect of pore size. It turns out that theoretical values agree well with experimental data, indicating that the improved strength in nanopaper is mainly attributed to the decreased pore size. Due to its outstanding breakdown strength, this study indicates the suitability of nanopaper for electrical insulation in ultra-high voltage convert transformers and other electrical devices.

  12. The effect of gas bubbles on electrical breakdown in transformer oil

    Science.gov (United States)

    Tyuftyaev, A. S.; Gadzhiev, M. Kh; Sargsyan, M. A.; Akimov, P. L.; Demirov, N. A.

    2016-11-01

    To study the breakdown of transformer oil with gas bubbles an experimental setup was created that allows to determine electrical and optical properties of the discharge. Oil was sparged with air and sulfur hexafluoride gas. It was found that sparging oil with gas lowers the breakdown voltage of the oil. When a gas bubble is present between the electrodes at a considerable distance from the electrodes at first there is a spherically shape flash observed, resulting in the discharge gap overlapping by a conductive channel. These leads to discharges forming in the discharge gap with the frequency of hundreds Hz and higher. Despite the slightly lower breakdown voltage of oil sparged with sulfur hexafluoride the advantage of this medium to clean oil can serve as a two-phase medium damping properties, which may be sufficient to prevent the destruction of the body in the breakdown of oil-filled equipment.

  13. A theoretical estimation of the pre-breakdown-heating time in the underwater discharge acoustic source

    Institute of Scientific and Technical Information of China (English)

    Wang Yi-Bo; Wang Shang-Wu; Zeng Xin-Wu

    2012-01-01

    One of the common characteristics of the electrothermal breakdown in an underwater discharge acoustic source(UDAS)is the existence of a pre-breakdown-heating phase.In our experiment,two phenomena were observed:(1)the breakdown time that takes on high randomicity and obeys a "double-peak" stochastic distribution;(2)the higher salt concentration that reduces the residual voltage and causes 100% non-breakdown.The mechanism of electrothermal breakdown is analysed.To specify the end of the pre-breakdown-heating phase,a "border boiling" assumption is proposed,in which the breakdown time is assumed to be the time needed to heat the border water around the initial arc to 773 K.Based on this ‘border boiling' assumption,the numerical simulation is performed to evaluate the effects of two heating mechanisms:the Joule heating from the ionic current,and the radiation heating from the initial arc.The simulation results verify the theoretical explanations to these two experiment phenomena:(1)the stochastic distribution of the radius of the initial arc results in the randomicity of the breakdown time;(2)the difference in efficiency between the radiation heating and the Joule heating determines that,in the case of higher salt concentration,more energy will be consumed in the pre-breakdown-heating phase.

  14. Streamer parameters and breakdown in CO2

    Science.gov (United States)

    Seeger, M.; Avaheden, J.; Pancheshnyi, S.; Votteler, T.

    2017-01-01

    CO2 is a promising gas for the replacement of SF6 in high-voltage transmission and distribution networks due to its lower environmental impact. The insulation properties of CO2 are, therefore, of great interest. For this, the properties of streamers are important, since they determine the initial discharge propagation and possibly the transition to a leader. The present experimental investigation addresses the streamer inception and propagation at ambient temperature in the pressure range 0.05-0.5 MPa at both polarities. Streamer parameters, namely the stability field, radius and velocity, were deduced in uniform and in strongly non-uniform background fields. The measured breakdown fields can then be understood by streamer propagation and streamer-to-leader transition.

  15. Delaying vortex breakdown by waves

    Science.gov (United States)

    Yao, M. F.; Jiang, L. B.; Wu, J. Z.; Ma, H. Y.; Pan, J. Y.

    1989-03-01

    The effect of spiral waves on delaying vortex breakdown in a tube is studied experimentally and theoretically. When a harmonic oscillation was imposed on one of guiding vanes in the tube, the breakdown was observed to be postponed appreciately. According to the generalized Lagrangian mean theory, proper forcing spiral waves may produce an additional streaming momentum, of which the effect is favorable and similar to an axial suction at downstream end. The delayed breakdown position is further predicted by using nonlinear wave theory. Qualitative agreement between theory and experiment is obtained, and experimental comparison of the effects due to forcing spiral wave and axial suction is made.

  16. Electrical-breakdown and electronic current of tantalum-tantalum oxide-aqueous electrolyte systems. [Ta sub 2 O sub 5

    Energy Technology Data Exchange (ETDEWEB)

    Kalra, K.C.; Katyal, P. (Dept. of Chemistry, Maharshi Dayanand Univ., Rohtak (India))

    1991-06-30

    Breakdown voltage and electronic current data for barrier anodic tantalum oxide films in contact with aqueous electrolytes of various concentrations and compositions at 298 K have been obtained. The influence of electrolyte concentration on breakdown characteristics can be broadly explained in terms of the Ikonopisov electron avalanche breakdown model. Albella and coworkers' theory explains the effect of electrolyte concentration for our results more explicitly. Various parameters of the Albella theory have been evaluated, and their dependence on electrolyte concentration has been studied. The dependence of breakdown voltage on electrolyte concentration has also been discussed in the light of the theory of Di Quarto and coworkers. (orig.).

  17. Multiphoton processes in KrF-laser induced gas breakdown

    Energy Technology Data Exchange (ETDEWEB)

    Poprawe, R.; Herziger, G.

    1986-05-01

    Ionization by multiphoton processes is the dominant generation mechanism of first electrons in the UV-laser-induced gas breakdown. A strongly simplified analytical model for the ion generation rate is used to give an estimate of the threshold intensity I/sub TH/. The result is compared to descriptions by Keldish and Bebb to check its limits of applicability. Solving the kinetic conservation equations for the focus volume gives an estimation of the breakdown intensity where the Debye criterion has been used in the sense of a plasma definition. As an example, breakdown experiments with a KrF-escimer laser have been carried out at different pressures in an argon atmosphere. The pressure dependency of the breakdown threshold intensity and its order of magnitude are predicted by the model.

  18. High Voltage Test Apparatus for a Neutron EDM Experiment and Lower Limit on the Dielectric Strength of Liquid Helium at Large Volumes

    CERN Document Server

    Long, J C; Boissevain, J G; Clark, D J; Cooper, M D; Gómez, J J; Lamoreaux, S K; Mischke, R E; Penttila, S I

    2006-01-01

    A new search for a permanent electric dipole moment (EDM) of the neutron is underway using ultracold neutrons produced and held in a bath of superfluid helium. Attaining the target sensitivity requires maintaining an electric field of several tens of kilovolts per centimeter across the experimental cell, which is nominally 7.5 cm wide and will contain about 4 liters of superfluid. The electrical properties of liquid helium are expected to be sufficient to meet the design goals, but little is known about these properties for volumes and electrode spacings appropriate to the EDM experiment. Furthermore, direct application of the necessary voltages from an external source to the experimental test cell is impractical. An apparatus to amplify voltages in the liquid helium environment and to test the electrical properties of the liquid for large volumes and electrode spacings has been constructed. The device consists of a large-area parallel plate capacitor immersed in a 200 liter liquid helium dewar. Preliminary r...

  19. RF breakdown by toroidal helicons

    Indian Academy of Sciences (India)

    S K P Tripathi; D Bora; M Mishra

    2001-04-01

    Bounded whistlers are well-known for their efficient plasma production capabilities in thin cylindrical tubes. In this paper we shall present their radio frequency (RF) breakdown and discharge sustaining capabilities in toroidal systems. Pulsed RF power in the electronmagnetohydrodynamic (EMHD) frequency regime is fed to the neutral background medium. After the breakdown stage, discharge is sustained by toroidal bounded whistlers. In these pulsed experiments the behaviour of the time evolution of the discharge could be studied in four distinct phases of RF breakdown, steady state attainment, decay and afterglow. In the steady state average electron density of ≈ 1012 per cc and average electron temperature of ≈ 20 eV are obtained at 10-3 mbar of argon filling pressure. Experimental results on toroidal mode structure, background effects and time evolution of the electron distribution function will be presented and their implications in understanding the breakdown mechanism are discussed.

  20. 0-D modeling of SST-1 plasma break-down & start-up using ECRH assisted pre-ionization

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Aveg, E-mail: aveg@ipr.res.in; Pradhan, Subrata

    2016-04-15

    Highlights: • Steady state superconducting tokamak (SST-1). • Pre-ionization. • ECRH. • 0-D model. - Abstract: Electron cyclotron resonance (ECRH) assisted break-down and start-up is considered as useful tool towards the discharge initiation in superconducting tokamaks, where the vacuum vessels and the cryostats are usually electrically continuous with thick walls. ECH pre-ionizations are known to reduce the required central solenoid swing induced toroidal electric field, E significantly. The Steady state superconducting tokamak (SST-1, R = 1.1 m, a = 0.2 m) has achieved successful plasma break-down and subsequent current ramp-up with ECH pre-ionizations in both fundamental mode and second harmonic modes with E ∼ 0.35 V/m. This work has discussed an appropriate simulation model and validated its results with experiments for the ECRH assisted breakdown and start-up, for both 1st harmonic ordinary mode (O1) and 2nd harmonic extra-ordinary mode (X2), in SST-1 for hydrogen plasmas, where the loop voltage is limited to 0.35 V/m. The simulation model is a zero-dimensional (0-D) model. In this model five temporal equations are solved for spatially-uniform plasma. The primary findings of this investigation has been the determination of the threshold ECRH power for successful pre-ionization of plasma in SST-1 and validations of the results with experimental findings in SST-1.

  1. The breakdown and glow phases during the initiation of discharges for lamps

    Energy Technology Data Exchange (ETDEWEB)

    Pitchford, L.C.; Peres, I.; Liland, K.B.; Boeuf, J.P. [Centre de Physique des Plasmas et Applications, Universite Paul Sabatier, 118 route de Narbonne, 31062 Toulouse (France); Gielen, H. [Central Development Laboratories, Philips Lighting, Eindhoven (The Netherlands)

    1997-07-01

    High intensity discharge (HID) lamps are often initiated by the application of one or more short, high-voltage, breakdown pulses superimposed on a 50 or 60 Hz generator voltage. A successful transition from the breakdown event to steady-state operating conditions in HID lamps requires that the lamp-circuit system be adequate to sustain the plasma created during breakdown until the electrodes are heated to thermionic temperatures. In this article, we use a one-dimensional (in the axial direction) transient discharge model to study the conditions needed to sustain the cold-cathode discharge after a breakdown event has occurred. While the application of our one-dimensional model to real lamps is approximate, we find that the model predictions are consistent with experimental results in HID lamps, a few of which are presented here. The main conclusion from this work is that, after breakdown, the voltage necessary to sustain a glow discharge is dependent on the source impedance, the gas composition, and on the plasma density created by the breakdown event. {copyright} {ital 1997 American Institute of Physics.}

  2. Breakdown and space charge formation in polyimide film under DC high stress at various temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kishi, Y; Hashimoto, T; Miyake, H; Tanaka, Y; Takada, T, E-mail: ytanaka@tcu.ac.j [Tokyo City University, 1-28-1, Tamatsutsumi, Setagaya-ku, Tokyo (Japan)

    2009-08-01

    Relationship between breakdown strength and space charge formation in polyimide film under dc high stress at various temperatures is investigated using pulsed electro-acoustic (PEA) method. Some typical results of the space charge observations show that hetero space charges are always found before breakdown. The amount of the hetero charges increase with increase of temperature or increase of applied electric field. Since the enhancement of the internal electric field in the sample by the accumulation of the hetero charges is not so large, the accumulation doesn't seem to be an immediate cause of breakdown. However since it is always observed before breakdown, it may be predictive information for breakdown. In a certain case, the breakdown occurs after voltage application for few hours. However, while we give an interval of short circuit condition after observing the hetero space charge under dc stress, the total voltage application time to breakdown is almost the same to the case without the interval. It means that the hetero space charge generation may show a kind of degradation of the material.

  3. Fundamentals of undervoltage breakdown through the Townsend mechanism

    Science.gov (United States)

    Cooley, James E.

    electrons required to achieve breakdown is measured in argon at pd values of 3-10 Torr-m. The required electron pulse magnitude was found to scale inversely with pressure and voltage in this parameter range. When higher-power infrared laser pulses were used to heat the cathode surface, a faster, streamer-like breakdown mechanism was occasionally observed. As an example application, an investigation into the requirements for initiating discharges in Gas-fed Pulsed Plasma Thrusters (GFPPTs) is conducted. Theoretical investigations based on order-of-magnitude characterizations of previous GFPPT designs reveal that high-conductivity arc discharges are required for critically-damped matching of circuit components, and that relatively fast streamer breakdown is preferable to minimize delay between triggering and current sheet formation. The faster breakdown mechanism observed in the experiments demonstrates that such a discharge process can occur. However, in the parameter space occupied by most thrusters, achieving the phenomenon by way of a space charge distortion caused purely by an electron pulse should not be possible. Either a transient change in the distribution of gas density, through ablation or desorption, or a thruster design that occupies a different parameter space, such as one that uses higher mass bits, higher voltages, or smaller electrode spacing, is required for undervoltage breakdown to occur.

  4. Experimental breakdown of selected anodized aluminum samples in dilute plasmas

    Science.gov (United States)

    Grier, Norman T.; Domitz, Stanley

    1992-01-01

    Anodized aluminum samples representative of Space Station Freedom structural material were tested for electrical breakdown under space plasma conditions. In space, this potential arises across the insulating anodized coating when the spacecraft structure is driven to a negative bias relative to the external plasma potential due to plasma-surface interaction phenomena. For anodized materials used in the tests, it was found that breakdown voltage varied from 100 to 2000 volts depending on the sample. The current in the arcs depended on the sample, the capacitor, and the voltage. The level of the arc currents varied from 60 to 1000 amperes. The plasma number density varied from 3 x 10 exp 6 to 10 exp 3 ions per cc. The time between arcs increased as the number density was lowered. Corona testing of anodized samples revealed that samples with higher corona inception voltage had higher arcing inception voltages. From this it is concluded that corona testing may provide a method of screening the samples.

  5. New phenomenology of gas breakdown in DC and RF fields

    Science.gov (United States)

    Petrović, Zoran Lj; Sivoš, Jelena; Savić, Marija; Škoro, Nikola; Radmilović Radenović, Marija; Malović, Gordana; Gocić, Saša; Marić, Dragana

    2014-05-01

    This paper follows a review lecture on the new developments in the field of gas breakdown and low current discharges, usually covered by a form of Townsend's theory and phenomenology. It gives an overview of a new approach to identifying which feedback agents provide breakdown, how to model gas discharge conditions and reconcile the results with binary experiments and how to employ that knowledge in modelling gas discharges. The next step is an illustration on how to record volt-ampere characteristics and use them on one hand to obtain the breakdown voltage and, on the other, to identify the regime of operation and model the secondary electron yields. The second aspect of this section concerns understanding the different regimes, their anatomy, how those are generated and how free running oscillations occur. While temporal development is the most useful and interesting part of the new developments, the difficulty of presenting the data in a written form precludes an easy publication and discussion. Thus, we shall only mention some of the results that stem from these measurements. Most micro discharges operate in DC albeit with complex geometries. Thus, parallel plate micro discharge measurements were needed to establish that Townsend's theory, with all its recent extensions, is still valid until some very small gaps. We have shown, for example, how a long-path breakdown puts in jeopardy many experimental observations and why a flat left-hand side of the Paschen curve often does not represent good physics. We will also summarize a kinetic representation of the RF breakdown revealing a somewhat more complex picture than the standard model. Finally, we will address briefly the breakdown in radially inhomogeneous conditions and how that affects the measured properties of the discharge. This review has the goal of summarizing (rather than developing details of) the current status of the low-current DC discharges formation and operation as a discipline which, in spite of

  6. Computer controlled performance mapping of thermionic converters: effect of collector, guard-ring potential imbalances on the observed collector current-density, voltage characteristics and limited range performance map of an etched-rhenium, niobium planar converter

    Science.gov (United States)

    Manista, E. J.

    1972-01-01

    The effect of collector, guard-ring potential imbalance on the observed collector-current-density J, collector-to-emitter voltage V characteristic was evaluated in a planar, fixed-space, guard-ringed thermionic converter. The J,V characteristic was swept in a period of 15 msec by a variable load. A computerized data acquisition system recorded test parameters. The results indicate minimal distortion of the J,V curve in the power output quadrant for the nominal guard-ring circuit configuration. Considerable distortion, along with a lowering of the ignited-mode striking voltage, was observed for the configuration with the emitter shorted to the guard ring. A limited-range performance map of an etched-rhenium, niobium, planar converter was obtained by using an improved computer program for the data acquisition system.

  7. CFD Simulation of Transonic Flow in High-Voltage Circuit Breaker

    Directory of Open Access Journals (Sweden)

    Xiangyang Ye

    2012-01-01

    Full Text Available A high-voltage circuit breaker is an indispensable piece of equipment in the electric transmission and distribution systems. Transonic flow typically occurs inside breaking chamber during the current interruption, which determines the insulating characteristics of gas. Therefore, accurate compressible flow simulations are required to improve the prediction of the breakdown voltages in various test duties of high-voltage circuit breakers. In this work, investigation of the impact of the solvers on the prediction capability of the breakdown voltages in capacitive switching is presented. For this purpose, a number of compressible nozzle flow validation cases have been presented. The investigation is then further extended for a real high-voltage circuit breaker geometry. The correlation between the flow prediction accuracy and the breakdown voltage prediction capability is identified.

  8. Radiation Effects on Breakdown Characteristics of Multi Guarded Devices

    CERN Document Server

    Da Rold, M; Bisello, D; Candelori, A; Da Re, A; Dalla Betta, Gian Franco; Paccagnella, A; Soncini, G; Verzellesi, G; Wheadon, R

    1997-01-01

    Multiguard structures are used in order to enhance the breakdown voltage of microstrip detectors. In this work we studied the electrical properties of devices designed in four different layouts on n-Si substrates, based on a central diode surrounded by various p+ and/or n+ floating rings. In particular we measured the main DC characteristics and we compared the experimental results with those simulated by a two-dimensional drift-diffusion computer model. Device noise was also measured for the central diode as a function of the applied voltage. We repeated all measurements after neutron and gamma irradiation, in view of the application of these devices to silicon microstrip detectors for future high energy physics experiments. For example at the LHC the level of radiation damage expected during the detector lifetime implies very high bias voltages for the detector operation. Multiguards can offer a solution, provided the optimisation of the design takes into account the radiation effects.

  9. Probabilistic description of traffic breakdowns.

    Science.gov (United States)

    Kühne, Reinhart; Mahnke, Reinhard; Lubashevsky, Ihor; Kaupuzs, Jevgenijs

    2002-06-01

    We analyze the characteristic features of traffic breakdown. To describe this phenomenon we apply the probabilistic model regarding the jam emergence as the formation of a large car cluster on a highway. In these terms, the breakdown occurs through the formation of a certain critical nucleus in the metastable vehicle flow, which enables us to confine ourselves to one cluster model. We assume that, first, the growth of the car cluster is governed by attachment of cars to the cluster whose rate is mainly determined by the mean headway distance between the car in the vehicle flow and, maybe, also by the headway distance in the cluster. Second, the cluster dissolution is determined by the car escape from the cluster whose rate depends on the cluster size directly. The latter is justified using the available experimental data for the correlation properties of the synchronized mode. We write the appropriate master equation converted then into the Fokker-Planck equation for the cluster distribution function and analyze the formation of the critical car cluster due to the climb over a certain potential barrier. The further cluster growth irreversibly causes jam formation. Numerical estimates of the obtained characteristics and the experimental data of the traffic breakdown are compared. In particular, we draw a conclusion that the characteristic intrinsic time scale of the breakdown phenomenon should be about 1 min and explain the case why the traffic volume interval inside which traffic breakdown is observed is sufficiently wide.

  10. Lightning-induced overvoltages in medium voltage distribution systems and customer experienced voltage spikes

    Energy Technology Data Exchange (ETDEWEB)

    Sabiha, N. A.

    2010-07-01

    In Finland, distribution transformers are frequently subjected to lightning strokes for which they are continuously protected by spark-gaps. So, the breakdown probability of medium voltage (MV) spark-gaps is modeled using the Gaussian distribution function under an impulse voltage test in accordance with the IEC 60060-1 standard. The model is presented in the form of the well-known Gaussian tail probability. Accordingly, a modified probabilistic model is proposed to study the effect of impulse voltage superimposed on the ac voltage on the breakdown probability of MV spark-gaps. The modified model is verified using experimental data, where the experimental setup is arranged to generate a range of impulse voltages superimposed on the ac voltages. The experimental verification shows evidence of the efficacy of the proposed probabilistic model. Furthermore, the proposed model is used to evaluate single-phase, two-phase and three-phase spark-gap breakdown probabilities in the case of lightning induced overvoltages. These breakdown probabilities are used along with the simplified Rusck expression to evaluate the performance of MV overhead lines above a perfectly conducting ground under lightning-induced overvoltages using a statistical approach. In order to study the overvoltages propagating through the transformer to its low voltage side, the high frequency model of the transformer is investigated. First, the investigation is carried out using model introduced by Piantini at no-load condition. This model is modified to take more than one resonance frequency into consideration. Therefore, the frequency response of the simulated transient voltage is improved. A verification of the modified model is carried out through the comparison between the experimental and simulation results, in which the time domain simulation is carried out using ATP/EMTP while MATLAB is used to identify the model parameters. As this model is found suitable only for unloaded transformer, an

  11. Self-rehealing characteristics of a sodium current limiter and its over current coordination for low voltage distribution systems; Natoriumu (Na) genryu soshi no jiko fukkyu tokusei to teiatsu haiden kairo oyo ni okeru kadenryu kyocho

    Energy Technology Data Exchange (ETDEWEB)

    Wada, Y.; Hamano, S.; Mori, T. [Mitsubishi Electric Corp., Tokyo (Japan)

    1994-07-20

    As one of the short circuits protection techniques in a power circuit, there is a technique called the current-limiting breaking. When a short circuit current commences to flow after a short circuit occurs, this technique limits and breaks this current under a certain value by some measures before this current reaches to the crest value. There is a current-limiting fuse in the best known one as a functional element doing the current-limiting breaking. However in case of a current-limiting fuse, when an element is fused off, because a current can not be flowed, it has to be replaced. As a new element to eliminate this defect and moreover with a current-limiting function, a self-rehealing type current-limiting element possessing the alkaline metal, Na as an element has been developed. In this report, as for this element called Na current-limiting element, together with elucidating a rehealing process after the current-limiting action experimentally in detail, an overcurrent coordination is investigated when this element is applied to a main circuit of the control center, which is one of the low voltage distribution systems. 5 refs., 8 figs., 1 tab.

  12. RF BREAKDOWN STUDIES USING PRESSURIZED CAVITIES

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Rolland

    2014-09-21

    Many present and future particle accelerators are limited by the maximum electric gradient and peak surface fields that can be realized in RF cavities. Despite considerable effort, a comprehensive theory of RF breakdown has not been achieved and mitigation techniques to improve practical maximum accelerating gradients have had only limited success. Part of the problem is that RF breakdown in an evacuated cavity involves a complex mixture of effects, which include the geometry, metallurgy, and surface preparation of the accelerating structures and the make-up and pressure of the residual gas in which plasmas form. Studies showed that high gradients can be achieved quickly in 805 MHz RF cavities pressurized with dense hydrogen gas, as needed for muon cooling channels, without the need for long conditioning times, even in the presence of strong external magnetic fields. This positive result was expected because the dense gas can practically eliminate dark currents and multipacting. In this project we used this high pressure technique to suppress effects of residual vacuum and geometry that are found in evacuated cavities in order to isolate and study the role of the metallic surfaces in RF cavity breakdown as a function of magnetic field, frequency, and surface preparation. One of the interesting and useful outcomes of this project was the unanticipated collaborations with LANL and Fermilab that led to new insights as to the operation of evacuated normal-conducting RF cavities in high external magnetic fields. Other accomplishments included: (1) RF breakdown experiments to test the effects of SF6 dopant in H2 and He gases with Sn, Al, and Cu electrodes were carried out in an 805 MHz cavity and compared to calculations and computer simulations. The heavy corrosion caused by the SF6 components led to the suggestion that a small admixture of oxygen, instead of SF6, to the hydrogen would allow the same advantages without the corrosion in a practical muon beam line. (2) A

  13. High Voltage Performance of the Beam Screen of the LHC Injection Kicker Magnets

    CERN Document Server

    Barnes, MJ; Bregliozzi, G; Calatroni, S; Costa Pinto, P; Day, H; Ducimetière, L; Kramer, T; Namora, V; Mertens, V; Taborelli, M

    2014-01-01

    The LHC injection kicker magnets include beam screens to shield the ferrite yokes against wakefields resulting from the high intensity beam. The screening is provided by conductors lodged in the inner wall of a ceramic support tube. The design of the beam screen has been upgraded to overcome limitations and permit LHC operation with increasingly higher bunch intensity and short bunch lengths: the new design also significantly reduces the electric field associated with the screen conductors, decreasing the probability of electrical breakdown. The high voltage conditioning process for the upgraded kicker magnets is presented and discussed. In addition a test setup has been utilized to study flashover, on the inner wall of the ceramic tube, as a function of both applied voltage and vacuum pressure: results from the test setup are presented.

  14. A Thermal Runaway Failure Model for Low-Voltage BME Ceramic Capacitors with Defects

    Science.gov (United States)

    Teverovsky, Alexander

    2017-01-01

    Reliability of base metal electrode (BME) multilayer ceramic capacitors (MLCCs) that until recently were used mostly in commercial applications, have been improved substantially by using new materials and processes. Currently, the inception of intrinsic wear-out failures in high quality capacitors became much greater than the mission duration in most high-reliability applications. However, in capacitors with defects degradation processes might accelerate substantially and cause infant mortality failures. In this work, a physical model that relates the presence of defects to reduction of breakdown voltages and decreasing times to failure has been suggested. The effect of the defect size has been analyzed using a thermal runaway model of failures. Adequacy of highly accelerated life testing (HALT) to predict reliability at normal operating conditions and limitations of voltage acceleration are considered. The applicability of the model to BME capacitors with cracks is discussed and validated experimentally.

  15. Low voltage arc formation in railguns

    Science.gov (United States)

    Hawke, Ronald S.

    1987-01-01

    A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

  16. White Paper on Multicarrier Excitation of Multipactor Breakdown: A Survey of Current Methods and Research Opportunities

    Science.gov (United States)

    2015-06-18

    AEROSPACE REPORT NO. TOR-2015-02548 White Paper on Multicarrier Excitation of Multipactor Breakdown: A Survey of Current Methods and...voltage phenomena where the verification power level is chosen such that the maximum instantaneous operational voltage in the component is excited . In...analysis methods under investigation for multicarrier excitation threshold prediction based on a survey of the research literature. In general, this

  17. A CAD investigation of metal-overhang on multiple guard ring design for high voltage operation of Si sensors

    Science.gov (United States)

    Bhardwaj, Ashutosh; Ranjan, Kirti; Namrata; Chatterji, Sudeep; Srivastava, Ajay K.; Shivpuri, R. K.

    2002-12-01

    The extension of Si detectors to the next generation high-energy physics experiments such as large hadron collider implies a reliable operation in high radiation environment which is by far the main technological challenge for these detectors. Multiple field limiting ring systems are well established as a means of protecting diffused junction from high voltage premature breakdown. Also, a spread of the Al metallization over the inter-cathodic field oxide sensibly lowers the electric field at the junction edges, thus, allowing for higher breakdown voltages. The purpose of this work is to combine the positive aspects of these two termination techniques with the aim of defining layouts and technological solutions suitable for the use of Si detectors in adverse radiation environment. An important feature is the potential distribution in the multi-guard ring structure, which depends on the bulk doping concentration, the oxide charge, the size of the gap between guard rings and the metal-overhang design. A systematic investigation on the breakdown performance is done by varying the physical and geometrical parameters such as width of overhang, guard ring spacing, junction depth and oxide charge. CAD tools are used for evaluating potential and electric field distributions within the device.

  18. Experimental study of polarity dependence in repetitive nanosecond-pulse breakdown

    Institute of Scientific and Technical Information of China (English)

    Shao Tao; Sun Guang-Sheng; Yan Ping; Wang Jue; Yuan Wei-Qun; Zhang Shi-Chang

    2007-01-01

    Pulsed breakdown of dry air at ambient pressure has been investigated in the point-plane geometry,using repetitive nanosecond pulses with 10 ns risetime,20-30 as duration,and up to 100 kV amplitude.A major concern in this paper is to study the dependence of breakdown strength on the point-electrode polarity.Applied voltage,breakdown current and repetitive stressing time are measured under the experimental conditions of some variables including pulse voltage peak,gap spacing and repetition rate.The results show that increasing the E-field strength can decrease breakdown time lag,repetitive stressing time and the number of applied pulses as expected.However,compared with the traditional polarity dependence it is weakened and not significant in the repetitive nanosecond-pulse breakdown.The ambiguous polaxity dependence in the experimental study is involved with an accumulation effect of residual charges and metastable states.Moreover,it is suggested that the reactions associated with the detachment of negative ions and impact deactivation of metastable specms could provide a source of primary initiating electrons for breakdown.

  19. Gas breakdown and plasma impedance in split-ring resonators

    Science.gov (United States)

    Hoskinson, Alan R.; Parsons, Stephen; Hopwood, Jeffrey

    2016-02-01

    The appearance of resonant structures in metamaterials coupled to plasmas motivates the systematic investigation of gas breakdown and plasma impedance in split-ring resonators over a frequency range of 0.5-9 GHz. In co-planar electrode gaps of 100 μm, the breakdown voltage amplitude decreases from 280 V to 225 V over this frequency range in atmospheric argon. At the highest frequency, a microplasma can be sustained using only 2 mW of power. At 20 mW, we measure a central electron density of 2 × 1020 m-3. The plasma-electrode overlap plays a key role in the microplasma impedance and causes the sheath impedance to dominate the plasma resistance at very low power levels. Contribution to the Topical Issue "Recent Breakthroughs in Microplasma Science and Technology", edited by Kurt Becker, Jose Lopez, David Staack, Klaus-Dieter Weltmann and Wei Dong Zhu.

  20. Accurate Switched-Voltage voltage averaging circuit

    OpenAIRE

    金光, 一幸; 松本, 寛樹

    2006-01-01

    Abstract ###This paper proposes an accurate Switched-Voltage (SV) voltage averaging circuit. It is presented ###to compensated for NMOS missmatch error at MOS differential type voltage averaging circuit. ###The proposed circuit consists of a voltage averaging and a SV sample/hold (S/H) circuit. It can ###operate using nonoverlapping three phase clocks. Performance of this circuit is verified by PSpice ###simulations.

  1. Design of 154 kV Extra-High-Voltage Prototype SF6 Bushing for Superconducting Electric Power Applications

    Science.gov (United States)

    Koo, Ja-yoon; Seong, Jae-gyu; Hwang, Jae-sang; Lee, Bang-wook; Lee, Sang-hwa

    2012-09-01

    One of the critical components to be developed for high-voltage superconducting devices, such as superconducting transformers, cables, and fault current limiters, is a high-voltage bushing to supply a high current to devices without insulation difficulties in cryogenic environments. Unfortunately, suitable bushings for high-temperature-superconductivity (HTS) equipment have not been fully developed to address cryogenic insulation issues. As a fundamental step towards developing the optimum design of the 154 kV prototype SF6 bushing of HTS devices, the puncture and creepage breakdown voltages of glass-fiber-reinforced-plastic (GFRP) were analyzed with a variety of configurations of electrodes and gap distances in the insulation material. And design factors of high-voltage cryogenic bushings were obtained from the result of tests. Finally, the withstand voltage tests of manufacturing a 154 kV extra-high-voltage (EHV) prototype bushing has been performed. Consequently, we verified the insulation level of the newly designed 154 kV EHV cryogenic prototype bushings for superconducting electric power applications.

  2. Study of protection devices against the effects of electric discharges inside a very high voltage generator: the Vivitron accelerator; Etude de dispositifs de protection contre les effets des decharges electriques au sein d`un generateur de tres haute tension: l`accelerateur Vivitron

    Energy Technology Data Exchange (ETDEWEB)

    Nolot, E.

    1996-10-31

    The Vivitron tandem is a large electrostatic accelerator comprising a Van de Graaff generator designed to reach terminal voltages of around 30 MV. The machine is limited at rather lower nominal voltages (about 20 MV) due to the sensitivity of the insulating column structure to transient overvoltages. These are induced by electrical discharges in compressed SF{sub 6}. This thesis first aims at analysing the fundamental reasons of electrical discharges in order to limit the probability of their occurrence. Then we simulate the transient overvoltages induced and present some improvements which may lead to a stable behaviour of the Vivitron at nominal voltages higher than 20 MV. Initially we deduce discharge onset voltages and actual breakdown field limitations in the different gap geometries from analysis of possible breakdown mechanisms in compressed SF{sub 6}. In a second part, some electrical characteristics of the insulating column structure are measured at high voltage. Fast rising oscillating waves induced by sparking in the Vivitron, along with the associated energies,are determined in the third part. The last part deals with new surge protections of the insulating column structure. Spark gaps with precise onset voltage and optimized shielding electrodes are discussed. ZnO-based varistors designed for operation at very high fields have also been developed in order to reduce transient overvoltage values. (author). 122 refs.

  3. In situ study on low-k interconnect time-dependent-dielectric-breakdown mechanisms

    Energy Technology Data Exchange (ETDEWEB)

    Boon Yeap, Kong, E-mail: KongBoon.Yeap@globalfoundries.com [GLOBALFOUNDRIES, Fab8, 400 Stonebreak Rd. Extension, Malta, New York 12020 (United States); Fraunhofer Institute for Ceramic Technologies and Systems, Maria-Reiche-Str. 2, D-01109 Dresden (Germany); Gall, Martin; Liao, Zhongquan; Sander, Christoph; Muehle, Uwe; Zschech, Ehrenfried [Fraunhofer Institute for Ceramic Technologies and Systems, Maria-Reiche-Str. 2, D-01109 Dresden (Germany); Justison, Patrick [GLOBALFOUNDRIES, Fab8, 400 Stonebreak Rd. Extension, Malta, New York 12020 (United States); Aubel, Oliver; Hauschildt, Meike; Beyer, Armand; Vogel, Norman [GLOBALFOUNDRIES Dresden Module One LLC and Co. KG, Wilschdorfer Landstr. 101, D-01109 Dresden (Germany)

    2014-03-28

    An in situ transmission-electron-microscopy methodology is developed to observe time-dependent dielectric breakdown (TDDB) in an advanced Cu/ultra-low-k interconnect stack. A test structure, namely a “tip-to-tip” structure, was designed to localize the TDDB degradation in small dielectrics regions. A constant voltage is applied at 25 °C to the “tip-to-tip” structure, while structural changes are observed at nanoscale. Cu nanoparticle formation, agglomeration, and migration processes are observed after dielectric breakdown. The Cu nanoparticles are positively charged, since they move in opposite direction to the electron flow. Measurements of ionic current, using the Triangular-Voltage-Stress method, suggest that Cu migration is not possible before dielectric breakdown, unless the Cu/ultra-low-k interconnect stacks are heated to 200 °C and above.

  4. Thermal Reversible Breakdown and Resistivity Switching in Hafnium Dioxide

    Directory of Open Access Journals (Sweden)

    N. Raghavan

    2012-03-01

    Full Text Available We present a model of thermal reversible breakdown via conductive filaments (CFs in hafnium dioxide (HfO2. These CFs appear as a result of electrical pretreatment of a metal/HfO2/metal (semiconductor nanostructure (MIM(S. The model is based on an assumption that the thermal reversible breakdown of a CF is due to of Joule heating displaying an exponential dependence of conductivity on temperature. The corresponding current-voltage characteristic and temperature of a CF in its middle and at the interface with an electrode are calculated taking into account the heat conduction equation and boundary conditions with heat dissipation via electrodes. It is found that the current-voltage characteristic of a CF has three specific regions. The initial and final regions have turned out to be linear with respect to the current and display different slopes, while the middle region is characterized by both the S-shaped and ultralinear dependences which are affected by the ambient temperature and nanostructure parameters. The switching potential from the high resistivity state (HRS to the low resistivity state (LRS was shown to decrease with the ambient temperature and with worsening of heat dissipation conditions. We present a model of thermal reversible breakdown via conductive filaments (CFs in hafnium dioxide (HfO2. These CFs appear as a result of electrical pretreatment of a metal/HfO2/metal (semiconductor nanostructure (MIM(S. The model is based on an assumption that the thermal reversible breakdown of a CF is due to of Joule heating displaying an exponential dependence of conductivity on temperature. The corresponding current-voltage characteristic and temperature of a CF in its middle and at the interface with an electrode are calculated taking into account the heat conduction equation and boundary conditions with heat dissipation via electrodes. It is found that the current-voltage characteristic of a CF has three specific regions. The initial and

  5. The influence of titanium dioxide additive on the short-term DC breakdown strength of polyethylene

    DEFF Research Database (Denmark)

    Khalil, M. S; Henk, Peter O; Henriksen, Mogens

    1990-01-01

    The effect of the addition of 1% by weight of titanium dioxide fine particles to low-density polyethylene (LDPE) on the short-term DC breakdown strength of the LDPE was investigated using direct and reverse polarity voltages. The samples used were cylinders of both plain and doped materials...

  6. Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

    CERN Document Server

    Bacchetta, N; Candelori, A; Da Rold, M; Descovich, M; Kaminski, A; Messineo, A; Rizzo, F; Verzellesi, G

    2001-01-01

    To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC. (3 refs).

  7. Laser-Induced Breakdown Spectroscopy of Trace Metals

    Science.gov (United States)

    Simons, Stephen (Technical Monitor); VanderWal, Randall L.; Ticich, Thomas M.; West, Joseph R., Jr.

    2004-01-01

    An alternative approach for laser-induced breakdown spectroscopy (LIBS) determination of trace metal determination in liquids is demonstrated. The limits of detection (LOD) for the technique ranged from 10 ppb to 10 ppm for 15 metals metals (Mg, Al, Si, Ca, Ti, Cr, Fe, Co, Ni, Cu, Zn, As, Cd, Hg, Pb) tested.

  8. Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices

    Science.gov (United States)

    Pejović, Milić M.; Denić, Dragan B.; Pejović, Momčilo M.; Nešić, Nikola T.; Vasović, Nikola

    2010-10-01

    This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven by TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.

  9. Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices

    Energy Technology Data Exchange (ETDEWEB)

    Pejovic, Milic M.; Denic, Dragan B.; Pejovic, Momcilo M.; Nesic, Nikola T.; Vasovic, Nikola [Faculty of Electronic Engineering, University of Nis, Aleksandra Medvedeva 14, 18000 Nis (Serbia)

    2010-10-15

    This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven by TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.

  10. Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices.

    Science.gov (United States)

    Pejović, Milić M; Denić, Dragan B; Pejović, Momčilo M; Nešić, Nikola T; Vasović, Nikola

    2010-10-01

    This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven by TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.

  11. Evaluation of the Voltage Support Strategies for the Low Voltage Grid Connected PV

    DEFF Research Database (Denmark)

    Demirok, Erhan; Sera, Dezso; Teodorescu, Remus

    2010-01-01

    PVs. In order to increase PV penetration level further, new voltage support control functions for individual inverters are required. This paper investigates distributed reactive power regulation and active power curtailment strategies regarding the development of PV connection capacity by evaluation......Admissible range of grid voltage is one of the strictest constraints for the penetration of distributed photovoltaic (PV) generators especially connection to low voltage (LV) public networks. Voltage limits are usually fulfilled either by network reinforcements or limiting of power injections from...

  12. Electrical Breakdown Characteristic of Nanostructured W-Cu Contacts Materials

    Institute of Scientific and Technical Information of China (English)

    WANG Junbo; CHEN Wen'ge; DING Bingjun

    2006-01-01

    Nanostructured (NS) W- Cu composite powder was prepared by mechanical alloying ( MA ), and nanostructured bulk of W- Cu contact material was fabricated by hot press sintering in an electrical vacuum furnace. The microstructure, electric conductivity, hardness and break down voltage of NS W-Cu alloys were measured and compared to those of conventional W- Cu alloys prepared by powder metallurgy. The experimental results show that microstructural refinement and uniformity can improve the breakdown behavior and the electric arc stability of nanostructured W- Cu contacts materials. Also, the nanostructured W- Cu contact material shows the characteristic of spreading electric arcs, which is of benefit to electric arc erosion.

  13. An automatic method to analyze the Capacity-Voltage and Current-Voltage curves of a sensor

    CERN Document Server

    Matorras Cuevas, Pablo

    2017-01-01

    An automatic method to perform Capacity versus voltage analysis for all kind of silicon sensor is provided. It successfully calculates the depletion voltage to unirradiated and irradiated sensors, and with measurements with outliers or reaching breakdown. It is built using C++ and using ROOT trees with an analogous skeleton as TRICS, where the data as well as the results of the ts are saved, to make further analysis.

  14. Experimental and theoretical studies of a high temperature cesium-barium tacitron, with application to low voltage-high current inversion. Final report, April 1, 1993--February 28, 1994

    Energy Technology Data Exchange (ETDEWEB)

    Murray, C.S.; El-Genk, M.S.

    1994-02-01

    A low voltage/high current switch refer-red as ``Cs-Ba tacitron`` is studied for use as a dc to ac inverter in high temperature and/or ionizing radiation environments. The operational characteristics of the Cs-Ba tacitron as a switch were investigated experimentally in three modes: (a) breakdown mode, (b) I-V mode, and (c) current modulation mode. Operation parameters measured include switching frequencies up to 20 kHz, hold-off voltages up to 200 V, current densities in excess of 15 A/CM{sup 2}, switch power density of 1 kW/cm{sup 2}, and a switching efficiency in excess of 90 % at collector voltages greater than 30 V. Also, if the discharge current is circuit limited to a value below the maximum thermal emission current density, the voltage drop is constant and below 3 V.

  15. Fully kinetic model of breakdown during sheath expansion after interruption of vacuum arcs

    Science.gov (United States)

    Wang, Zhenxing; Wang, Haoran; Zhou, Zhipeng; Tian, Yunbo; Geng, Yingsan; Wang, Jianhua; Liu, Zhiyuan

    2016-08-01

    Research on sheath expansion is critical to the understanding of the dielectric recovery process in a vacuum interrupter after interruption of vacuum arcs. In this paper, we investigated how residual plasma affects breakdown in the sheath expansion period after the current zero. To simulate sheath expansion and breakdown, we developed a fully kinetic particle-in-cell Monte Carlo collision model with one spatial dimension and three velocity dimensions. The model accounted for various collisions, including ionization, excitation, elastic collisions, charge exchange, and momentum exchange, and we added an external circuit to the model to make the calculations self-consistent. The existence of metal vapor slowed the sheath expansion in the gap and caused high electric field formation in front of the cathode surface. The initial residual plasma, which was at sufficiently low density, seemed to have a limited impact on breakdown, and the metal vapor dominated the breakdown in this case. Additionally, the breakdown probability was sensitive to the initial plasma density if the value exceeded a specific threshold, and plasma at sufficiently high density could mean that breakdown would occur more easily. We found that if the simulation does not take the residual plasma into account, it could overestimate the critical value of the metal vapor density, which is always used to describe the boundary of breakdown after interruption of vacuum arcs. We discussed the breakdown mechanism in sheath expansion, and the breakdown is determined by a combination of metal vapor, residual plasma, and the electric field in front of the cathode surface.

  16. Measurement of the magnetic fields of high-voltage substations (230 kV) in Tehran (Iran) and comparison with the ACGIH threshold limit values.

    Science.gov (United States)

    Fard, Mahdieh Sharifi; Nasiri, Parvin; Monazzam, Mohammad Reza

    2011-06-01

    Measurements were made according to IEEE standard 644-1994 at a height of 1 m above floor level. It is concluded that none of the measurements exceeded the ACGIH threshold limit value. Among all control rooms the highest measured density amount is 0.69 μT in the control room of Ozgol substation and the lowest is 0.2 μT in the post of Shahid Firouzi. The control room of Ozgol substation is located in the second floor and bus-bars are located at a short distance from the window on the east, and so the highest recorded magnetic field is measured in this control room. Among all switchgear parts the highest amount 9.15 μT is measured in Kan substation. None of the measurements exceeded the ACGIH threshold limit value.

  17. Shaft Voltage and Life of Bearing electric-erosion for the Brushless DC Motor

    Science.gov (United States)

    Maetani, Tatsuo; Isomura, Yoshinori; Komiyama, Hiroshi; Morimoto, Shigeo

    This paper describes the life of noise of bearing electro-erosion in the shaft voltage of brushless DC motors. We confirmed that shaft voltage is suppressed to equal to or less than the dielectric breakdown voltage of bearing lubricant in the insulated rotor proposed for suppression of shaft voltage. However, since bearing electro-erosion appears over time along with the deterioration of noise performance, the threshold of the shaft voltage to secure noise performance over long periods of time is necessary. Therefore, the threshold of the shaft voltage that influences the life of noise was obtained in acceleration tests.

  18. A novel high voltage start up circuit for an integrated switched mode power supply

    Energy Technology Data Exchange (ETDEWEB)

    Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

  19. SEMICONDUCTOR DEVICES: A novel high voltage start up circuit for an integrated switched mode power supply

    Science.gov (United States)

    Hao, Hu; Xingbi, Chen

    2010-09-01

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.

  20. Reliability criteria for voltage stability

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Carson W.; Silverstein, Brian L. [Bonneville Power Administration, Portland, OR (United States)

    1994-12-31

    In face of costs pressures, there is need to allocate scare resources more effectively in order to achieve voltage stability. This naturally leads to development of probabilistic criteria and notions of rick management. In this paper it is presented a discussion about criteria for long term voltage stability limited to the case in which the time frames are topically several minutes. (author) 14 refs., 1 fig.

  1. DC Breakdown Experiments with Iridium Cathode

    CERN Document Server

    Profatilova, Iaroslava; Korsback, Anders; Muranaka, Tomoko; Wuensch, Walter

    2015-01-01

    Electrical breakdown occurring in rf accelerating structures is one of the major disruptions of the accelerated beam in CLIC. At CERN, as complements to rf facilities, DC-spark systems have been used to study breakdown properties of many candidate materials for making rf components. In this note, measurements of conditioning speed, breakdown field and field enhancement factor of iridium are presented comparing with previously tested materials. The average breakdown field after conditioning reached 238 MV/m, which places iridium next to copper. By comparison with results and properties of other metals, the low breakdown field of iridium could be explained by its face-centred-cubic crystal structure.

  2. Magnetosphere-ionosphere coupling currents in Jupiter's middle magnetosphere: effect of magnetosphere-ionosphere decoupling by field-aligned auroral voltages

    Directory of Open Access Journals (Sweden)

    J. D. Nichols

    2005-03-01

    Full Text Available We consider the effect of field-aligned voltages on the magnetosphere-ionosphere coupling current system associated with the breakdown of rigid corotation of equatorial plasma in Jupiter's middle magnetosphere. Previous analyses have assumed perfect mapping of the electric field and flow along equipotential field lines between the equatorial plane and the ionosphere, whereas it has been shown that substantial field-aligned voltages must exist to drive the field-aligned currents associated with the main auroral oval. The effect of these field-aligned voltages is to decouple the flow of the equatorial and ionospheric plasma, such that their angular velocities are in general different from each other. In this paper we self-consistently include the field-aligned voltages in computing the plasma flows and currents in the system. A third order differential equation is derived for the ionospheric plasma angular velocity, and a power series solution obtained which reduces to previous solutions in the limit that the field-aligned voltage is small. Results are obtained to second order in the power series, and are compared to the original zeroth order results with no parallel voltage. We find that for system parameters appropriate to Jupiter the effect of the field-aligned voltages on the solutions is small, thus validating the results of previously-published analyses.

  3. Computation of small disturbance voltage stability limit point of power systems under N-1 contingencies%N-1故障后系统小干扰电压稳定极限点计算

    Institute of Scientific and Technical Information of China (English)

    林舜江; 刘明波

    2011-01-01

    构建了负荷采用三阶感应电动机并联恒阻抗表示的电力系统短期电压稳定分析数学模型,并推导出负荷增减的表示方法.根据系统小干扰方程状态矩阵特征值为零的特点,提出了计算小干扰电压稳定极限点的数学模型,以求得N-1故障后系统从当前运行状态到电压稳定极限点需增减的负荷.通过对发电机稳态方程中功角的三角函数项引入辅助变量,将极限点计算模型转化为关于未知量的线性或二次函数,进而可采用最优乘子牛顿法计算极限点,以解决极限点处系统稳态方程雅可比矩阵奇异带来的收敛困难.IEEE9节点系统和IEEE39节点系统的计算结果表明该方法能够可靠地收敛到N-1故障后系统的小干扰电压稳定极限点.%The three-order induction motor paralleled with constant impedance model is used to represent the load, and the mathematical model of analyzing the short-term voltage stability of power system is established. The representation of load increasing and shedding is also deduced. Based on the characteristic that the state matrix of small disturbance equations has zero eigenvalue, the mathematical model of computing the small disturbance voltage stability limit point is proposed, and the load need to be increased or be sheded from current state to voltage stability limit point of the system under N-I contingencies can be computed.By introducing auxiliary variables to represent the trigonometric functions of rotor angle in the steady equations of generators, the mathematical model of computing the limit point is transferred into the linear and quadratic functions of unknown variables, and the optimal multiplier Newton method can be used to compute the limit point, and the problem that the Jacobian matrix of the steady equations of the system is singular at the limit point and results in the convergence difficulty is solved. Computations in the IEEE 9-bus system and IEEE 39-bus system

  4. Tune in, breakdown, and reboot

    OpenAIRE

    Pedersen, Michael

    2009-01-01

    Routine work‐process, lack of self‐management, and long work‐hours have traditionally been the main topics of discussion within the occupational stress literature, constituting the primary factors that make people breakdown and burn out. But within the last couple of years, this discussion has expanded its focus from issues concerning the disciplinary work‐space. Increasing attention is now being placed on the problems related to the burgeoning interest in employee empowerme...

  5. Individual breakdown of pension rights

    CERN Multimedia

    2016-01-01

    You should have recently received, via email, your “Individual breakdown of pension rights”.   Please note that: the calculation was based on data as at 1st July 2016, as at 1st September 2016, CERN will introduce a new career structure; the salary position will now be expressed as a percentage of a midpoint of a grade.   We would like to draw your attention to the fact that your pension rights will remain unchanged. Benefits Service CERN Pension Fund

  6. DC breakdown experiments with cobalt electrodes

    CERN Document Server

    Descoeudres, Antoine; Nordlund, Kai

    2009-01-01

    RF accelerating structures of the Compact Linear Collider (CLIC) require a material capable of sustaining high electric field with a low breakdown rate and low induced damage. Because of the similarity of many aspects of DC and RF breakdown, a DC breakdown study is underway at CERN in order to test candidate materials and surface preparations, and have a better understanding of the breakdown mechanism under ultra-high vacuum in a simple setup. The conditioning speed, breakdown field and field enhancement factor of cobalt have been measured. The average breakdown field after conditioning reaches 615 MV/m, which places cobalt amongst the best materials tested so far. By comparison with results and properties of other metals, the high breakdown field of Co could be due to its high work function and maybe also to its hexagonal crystal structure. Geneva, Switzerland (June 2009) CLIC – Note – 875

  7. Nickel-gallium arsenide high-voltage power Schottky diodes

    Science.gov (United States)

    Ashkinazi, G.; Hadas, Tz.; Meyler, B.; Nathan, M.; Zolotarevski, L.; Zolotarevski, O.

    1993-01-01

    A power GaAs Schottky diode (SD) with a chemically deposited Ni barrier was designed, fabricated and tested. The diode has a reverse breakdown voltage VBR of 140 V, forward voltage drop VF (at 50 A/cm 2) of 0.7 V at 23°C, 0.5 V at 150°C and 0.3 V at 250°C, and reverse leakage current densities jR (at -50 V) of 0.1 μA/cm 2 at 23°C and 1 mA/cm 2 at 150°C. Calculated forward and reverse I- V characteristics using a simple self-consistent computer model are in good agreement with measured values. Calculated characteristics of a silicon SD with identical structure parameters, using the same model, show much poorer VBR, VF and jR values. The theoretical maximum value of VBR is physically limited by the largest allowed VF. For a V Fof ⋍1.6 V, V BR.maxis ⋍200 V in Si and ⋍800 simple technology allows manufacturing of large area GaAs Schottky diodes with average currents up to V in GaAs SDs. Our relatively 100 A.

  8. Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond

    Science.gov (United States)

    Teraji, Tokuyuki; Koizumi, Satoshi; Koide, Yasuo; Ito, Toshimichi

    2008-07-01

    The reverse current of lateral-type Schottky diodes fabricated on p-type homoepitaxial diamond was analyzed by changing the distance between Schottky and Ohmic electrodes and the metal materials in the Schottky electrodes. The maximum electric field at breakdown was 0.56 MV cm -1 for the Au Schottky contact and less than 0.26 MV cm -1 for the Al Schottky contact. The breakdown voltage depended on the electrode distance when the diamond surface was revealed in vacuum, whereas the Schottky diodes sustained the applied voltage of 500 V, corresponding to 0.69 MV cm -1, after covering of the diamond surface with an insulating liquid. Diamond surface protection is an indispensable technique for fabrication of high-voltage Schottky diodes based on diamond.

  9. Voltage holding study of 1 MeV accelerator for ITER neutral beam injector.

    Science.gov (United States)

    Taniguchi, M; Kashiwagi, M; Umeda, N; Dairaku, M; Takemoto, J; Tobari, H; Tsuchida, K; Yamanaka, H; Watanabe, K; Kojima, A; Hanada, M; Sakamoto, K; Inoue, T

    2012-02-01

    Voltage holding test on MeV accelerator indicated that sustainable voltage was a half of that of ideal quasi-Rogowski electrode. It was suggested that the emission of the clumps is enhanced by a local electric field concentration, which leads to discharge initiation at lower voltage. To reduce the electric field concentration in the MeV accelerator, gaps between the grid supports were expanded and curvature radii at the support corners were increased. After the modifications, the accelerator succeeded in sustaining -1 MV in vacuum without beam acceleration. However, the beam energy was still limited at a level of 900 keV with a beam current density of 150 A∕m(2) (346 mA) where the 3 × 5 apertures were used. Measurement of the beam profile revealed that deflection of the H(-) ions was large and a part of the H(-) ions was intercepted at the acceleration grid. This causes high heat load on the grids and the breakdowns during beam acceleration. To suppress the direct interception, new grid system was designed with proper aperture displacement based on a 3D beam trajectory analysis. As the result, the beam deflection was compensated and the voltage holding during the beam acceleration was improved. Beam parameter of the MeV accelerator was increased to 980 keV, 185 A∕m(2) (427 mA), which is close to the requirement of ITER accelerator (1 MeV, 200 A∕m(2)).

  10. Degradation of AlGaN/GaN high-electron mobility transistors in the current-controlled off-state breakdown

    Energy Technology Data Exchange (ETDEWEB)

    Kuzmik, J., E-mail: jan.kuzmik@savba.sk; Jurkovič, M.; Gregušová, D.; Ťapajna, M. [Institute of Electrical Engineering SAS, Dubravska cesta 9, 841 04 Bratislava (Slovakia); Brunner, F.; Cho, M.; Würfl, J. [Ferdinand-Braun-Institute, Leibnitz Institute für Höchfrequenztechnik, Gustav-Kirchoff-Strasse 4, 12489 Berlin (Germany); Meneghesso, G. [Department of Information Engineering, University of Padova, via Gradenigo, 6/B 35131 Padova (Italy)

    2014-04-28

    We investigate degradation mechanisms in AlGaN/GaN HEMTs which were repeatedly driven into the current-controlled off-state breakdown or subject to 60 s voltage- or current-controlled off state stresses. The current-controlled sweep in to the breakdown allows the sustainability of breakdown that can not be observed in the voltage controlled sweep. Only temporal changes were observed in the HEMT dc performance after repetitive sweeps, which were explained by charging/discharging of the HEMT surface at the gate-to-drain access region and in the GaN buffer below the gate. Similar changes were observed also if high-voltage stress has been applied on the drain; however, permanent degradation appears after 60 s current-controlled breakdown stress. In this case, the drain leakage current, as well as the breakdown current, increases significantly. On the other hand, the breakdown voltage, as well as the gate characteristics, remains unaltered. We suggest that the avalanche-injection process is governing the off-state breakdown event with a dominant role of the potential barrier at the channel-buffer interface.

  11. DC-driven plasma gun: self-oscillatory operation mode of atmospheric-pressure helium plasma jet comprised of repetitive streamer breakdowns

    Science.gov (United States)

    Wang, Xingxing; Shashurin, Alexey

    2017-02-01

    This paper presents and studies helium atmospheric pressure plasma jet comprised of a series of repetitive streamer breakdowns, which is driven by pure DC high voltage (self-oscillatory behavior). The repetition frequency of the breakdowns is governed by the geometry of discharge electrodes/surroundings and gas flow rate. Each next streamer is initiated when the electric field on the anode tip recovers after the previous breakdown and reaches the breakdown threshold value of about 2.5 kV cm-1. One type of the helium plasma gun designed using this operational principle is demonstrated. The gun operates on about 3 kV DC high voltage and is comprised of the series of the repetitive streamer breakdowns at a frequency of about 13 kHz.

  12. Development of modulation strategies for NPC converter addressing DC link voltage balancing and CMV reduction

    DEFF Research Database (Denmark)

    Boian, D.; Biris, C.; Teodorescu, Remus

    2012-01-01

    in insulation breakdown and bearing failures. By the use of this type of converters, both Electromagnetic Interference (EMI) and harmonic distortions are improved. This paper proposes two modulation strategies for Three Level Neutral Point Clamped Converter (3L-NPC). The main focus of these modulation...... strategies is to reduce the Common Mode Voltage (CMV) and balance the DC Link Voltage....

  13. Dielectric breakdown strength of magnetic nanofluid based on insulation oil after impulse test

    Science.gov (United States)

    Nazari, M.; Rasoulifard, M. H.; Hosseini, H.

    2016-02-01

    In this study, the dielectric breakdown strength of magnetic nanofluids based on transformer mineral oil for use in power systems is reviewed. Nano oil samples are obtained from dispersion of the magnetic nanofluid within uninhibited transformer mineral oil NYTRO LIBRA as the base fluid. AC dielectric breakdown voltage measurement was carried out according to IEC 60156 standard and the lightning impulse breakdown voltage was obtained by using the sphere-sphere electrodes in an experimental setup for nano oil in volume concentration of 0.1-0.6%. Results indicate improved AC and lightning impulse breakdown voltage of nano oil compared to the base oil. AC test was performed again after applying impulse current and result showed that nano oil unlike the base oil retains its dielectric properties. Increase the dielectric strength of the nano oil is mainly due to dielectric and magnetic properties of Fe3O4 nanoparticles that act as free electrons snapper, and reduce the rate of free electrons in the ionization process.

  14. Numerical modeling of high-voltage circuit breaker arcs and their interraction with the power system

    Science.gov (United States)

    Orama, Lionel R.

    In this work the interaction between series connected gas and vacuum circuit breaker arcs has been studied. The breakdown phenomena in vacuum interrupters during the post arc current period have been of special interest. Numerical models of gas and vacuum arcs were developed in the form of black box models. Especially, the vacuum post arc model was implemented by combining the existing transition model with an ion density function and expressions for the breakdown mechanisms. The test series studied reflect that for electric fields on the order of 10sp7V/m over the anode, the breakdown of the vacuum gap can result from a combination of both thermal and electrical stresses. For a particular vacuum device, the vacuum model helps to find the interruption limits of the electric field and power density over the anode. The series connection of gas and vacuum interrupters always performs better than the single gas device. Moreover, to take advantage of the good characteristics of both devices, the time between the current zero crossing in each interrupter can be changed. This current zero synchronization is controlled by changing the capacitance in parallel to the gas device. This gas/vacuum interrupter is suitable for interruption of very stressful short circuits in which the product of the dI/dt before current zero and the dV/dt after current zero is very high. Also, a single SF6 interrupter can be replaced by an air circuit breaker of the same voltage rating in series with a vacuum device without compromising the good performance of the SF6 device. Conceptually, a series connected vacuum device can be used for high voltage applications with equal distribution of electrical stresses between the individual interrupters. The equalization can be made by a sequential opening of the individual contact pairs, beginning with the interruptors that are closer to ground potential. This could eliminate the use of grading capacitors.

  15. Off-state electrical breakdown of AlGaN/GaN/Ga(AlN HEMT heterostructure grown on Si(111

    Directory of Open Access Journals (Sweden)

    Shuiming Li

    2016-03-01

    Full Text Available Electrical breakdown characteristics of AlxGa1−xN buffer layers grown on Si(111 are investigated by varying the carbon concentration ([C]: from ∼1016 to 1019 cm−3, Al-composition (x = 0 and 7%, and buffer thickness (from 1.6 to 3.1 μm. A quantitative relationship between the growth conditions and carbon concentration ([C] is established, which can guide to grow the Ga(AlN layer with a given [C]. It is found that the carbon incorporation is sensitive to the growth temperature (T (exponential relationship between [C] and 1/T and the improvement of breakdown voltage by increasing [C] is observed to be limited when [C] exceeding 1019 cm−3, which is likely due to carbon self-compensation. By increasing the highly resistive (HR Al0.07Ga0.93N buffer thickness from 1.6 to 3.1 μm, the leakage current is greatly reduced down to 1 μA/mm at a bias voltage of 1000 V.

  16. Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)

    Science.gov (United States)

    Li, Shuiming; Zhou, Yu; Gao, Hongwei; Dai, Shujun; Yu, Guohao; Sun, Qian; Cai, Yong; Zhang, Baoshun; Liu, Sheng; Yang, Hui

    2016-03-01

    Electrical breakdown characteristics of AlxGa1-xN buffer layers grown on Si(111) are investigated by varying the carbon concentration ([C]: from ˜1016 to 1019 cm-3), Al-composition (x = 0 and 7%), and buffer thickness (from 1.6 to 3.1 μm). A quantitative relationship between the growth conditions and carbon concentration ([C]) is established, which can guide to grow the Ga(Al)N layer with a given [C]. It is found that the carbon incorporation is sensitive to the growth temperature (T) (exponential relationship between [C] and 1/T) and the improvement of breakdown voltage by increasing [C] is observed to be limited when [C] exceeding 1019 cm-3, which is likely due to carbon self-compensation. By increasing the highly resistive (HR) Al0.07Ga0.93N buffer thickness from 1.6 to 3.1 μm, the leakage current is greatly reduced down to 1 μA/mm at a bias voltage of 1000 V.

  17. Experimental validation of prototype high voltage bushing

    Science.gov (United States)

    Shah, Sejal; Tyagi, H.; Sharma, D.; Parmar, D.; M. N., Vishnudev; Joshi, K.; Patel, K.; Yadav, A.; Patel, R.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A.

    2017-08-01

    Prototype High voltage bushing (PHVB) is a scaled down configuration of DNB High Voltage Bushing (HVB) of ITER. It is designed for operation at 50 kV DC to ensure operational performance and thereby confirming the design configuration of DNB HVB. Two concentric insulators viz. Ceramic and Fiber reinforced polymer (FRP) rings are used as double layered vacuum boundary for 50 kV isolation between grounded and high voltage flanges. Stress shields are designed for smooth electric field distribution. During ceramic to Kovar brazing, spilling cannot be controlled which may lead to high localized electrostatic stress. To understand spilling phenomenon and precise stress calculation, quantitative analysis was performed using Scanning Electron Microscopy (SEM) of brazed sample and similar configuration modeled while performing the Finite Element (FE) analysis. FE analysis of PHVB is performed to find out electrical stresses on different areas of PHVB and are maintained similar to DNB HV Bushing. With this configuration, the experiment is performed considering ITER like vacuum and electrical parameters. Initial HV test is performed by temporary vacuum sealing arrangements using gaskets/O-rings at both ends in order to achieve desired vacuum and keep the system maintainable. During validation test, 50 kV voltage withstand is performed for one hour. Voltage withstand test for 60 kV DC (20% higher rated voltage) have also been performed without any breakdown. Successful operation of PHVB confirms the design of DNB HV Bushing. In this paper, configuration of PHVB with experimental validation data is presented.

  18. Dielectric breakdown during Cs+ sputtering of polyvinyl chloride

    Science.gov (United States)

    Wahoud, F.; Guillot, J.; Audinot, J. N.; Bertrand, P.; Delcorte, A.; Migeon, H. N.

    2014-02-01

    Thin films of insulating polymers are sometimes analyzed by secondary ion mass spectrometry (SIMS) or by X-ray photoelectron spectroscopy (XPS) without the use of an electron gun. In this work, both SIMS and XPS have been used to study the chemical and structural modifications due to the charge effect during Cs+ sputtering of a thin film of polyvinyl chloride (PVC). The kinetic energy distribution study shows that at a small primary fluence ˜1015 Cs+ ions/cm2, the dielectric breakdown voltage of the PVC film is reached, i.e. the minimum voltage that causes a portion of an insulator to become electrically conductive. XPS study indicates that the conducting phase created in the PVC film after energetic Cs+ bombardment consists of graphitized carbon and metallic cesium clusters. After the dielectric breakdown of the film, the positive charge, previously accumulated on the surface, is neutralized through the conductive regions, which are created in the insulating film. During Cs+ sputtering of a PVC film, the chemical structure of the analyzed surface is completely modified and some ionic bonds such as CsC and CsCl are also created.

  19. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  20. No-Voltage Meter

    Science.gov (United States)

    1976-02-01

    VW- IKft, 1/4 H4 -Wv- IK!1, I/4W INTERNAL VOLTAGE NOTE ALL TRANSISTORS ARE 2N43A OR EQUIVALENT GERMANIUM ALLOY PNP AA ALKALINE BATTERY...D-,, regardless of polarity. This signal is then full-wave rectified by the diode-connected Germanium transistor bridge, T,, T-,, T3, and T4... Transistor T5 acts as a second current limiter. Resistor R2 was selected to give 90 f# of full-scale meter deflection with an input signal of 115 volts

  1. Study of Edge Effects in the Breakdown Process of p+ on n-bulk Silicon Diodes

    CERN Document Server

    Borrello, L; Da Rold, M; Dell'Orso, R; Dutta, S; Messineo, A; Mihul, A; Militaru, O; Tonelli, G; Verdini, P G; Wheadon, R; Xie, Z

    1998-01-01

    The paper describes the role of the n+ edge implants in the breakdown process of p+ on n-bulk silicon diodes. Laboratory measurements and simulation studies are presented on a series of test structures aimed at an optimisation of the design in the edge region. The dependence of the breakdown voltage on the geometrical parameters of the devices is discussed in detail. Design rules are extracted for the use of n-wells along the scribe line to avoid surface conduction of current generated by the exposed edges. The effect of neutron irradiation has been studied up to a fluence 1.8*10^15 n/cm2.

  2. Synthesis mechanism of low-voltage praseodymium oxide doped zinc oxide varistor ceramics prepared through modified citrate gel coating.

    Science.gov (United States)

    Abdullah, Wan Rafizah Wan; Zakaria, Azmi; Ghazali, Mohd Sabri Mohd

    2012-01-01

    High demands on low-voltage electronics have increased the need for zinc oxide (ZnO) varistors with fast response, highly non-linear current-voltage characteristics and energy absorption capabilities at low breakdown voltage. However, trade-off between breakdown voltage and grain size poses a critical bottle-neck in the production of low-voltage varistors. The present study highlights the synthesis mechanism for obtaining praseodymium oxide (Pr(6)O(11)) based ZnO varistor ceramics having breakdown voltages of 2.8 to 13.3 V/mm through employment of direct modified citrate gel coating technique. Precursor powder and its ceramics were examined by means of TG/DTG, FTIR, XRD and FESEM analyses. The electrical properties as a function of Pr(6)O(11) addition were analyzed on the basis of I-V characteristic measurement. The breakdown voltage could be adjusted from 0.01 to 0.06 V per grain boundary by controlling the amount of Pr(6)O(11) from 0.2 to 0.8 mol%, without alteration of the grain size. The non-linearity coefficient, α, varied from 3.0 to 3.5 and the barrier height ranged from 0.56 to 0.64 eV. Breakdown voltage and α lowering with increasing Pr(6)O(11) content were associated to reduction in the barrier height caused by variation in O vacancies at grain boundary.

  3. Laser-Induced Breakdown in Liquid Helium

    Science.gov (United States)

    Sirisky, S.; Yang, Y.; Wei, W.; Maris, H. J.

    2017-10-01

    We report on experiments in which focused laser light is used to induce optical breakdown in liquid helium-4. The threshold intensity has been measured over the temperature range from 1.1 to 2.8 K with light of wavelength 1064 nm. In addition to the measurement of the threshold, we have performed experiments to study how the breakdown from one pulse modifies the probability that a subsequent pulse will result in breakdown.

  4. The Development of Breakdown in Transformer Oil

    Directory of Open Access Journals (Sweden)

    Jozef Kudelcik

    2007-01-01

    Full Text Available The conditions under which breakdown of composite liquid - solid insulation can be occurred, e.g. in transformer, play an important role in designing of such insulation. The initial state of breakdown development is explained based on development of streamers in cavitations. The whole breakdown development in transformer oil is represented by RLC circuit and it depends on the parameters of outer circuit.

  5. Blood-Brain Barrier Breakdown in the Aging Human Hippocampus

    Science.gov (United States)

    Montagne, Axel; Barnes, Samuel R.; Sweeney, Melanie D.; Halliday, Matthew R.; Sagare, Abhay P.; Zhao, Zhen; Toga, Arthur W.; Jacobs, Russell E.; Liu, Collin Y.; Amezcua, Lilyana; Harrington, Michael G.; Chui, Helena C.; Law, Meng; Zlokovic, Berislav V.

    2014-01-01

    Summary The blood-brain barrier (BBB) limits entry of blood-derived products, pathogens and cells into the brain that is essential for normal neuronal functioning and information processing. Post-mortem tissue analysis indicates BBB damage in Alzheimer’s disease (AD). The timing of BBB breakdown remains, however, elusive. Using an advanced dynamic contrast-enhanced magnetic resonance imaging protocol with high spatial and temporal resolutions to quantify regional BBB permeability in the living human brain, we show an age-dependent BBB breakdown in the hippocampus, a region critical for learning and memory that is affected early in AD. The BBB breakdown in the hippocampus and its CA1 and dentate gyrus subdivisions worsened with mild cognitive impairment that correlated with injury to BBB-associated pericytes, as shown by the cerebrospinal fluid analysis. Our data suggest that BBB breakdown is an early event in the aging human brain that begins in the hippocampus and may contribute to cognitive impairment. PMID:25611508

  6. RF breakdown of 805 MHz cavities in strong magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Bowring, D. [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Stratakis, D. [Brookhaven National Lab. (BNL), Upton, NY (United States); Kochemirovskiy, A. [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Leonova, M. [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Moretti, A. [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Palmer, M. [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Peterson, D. [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Yonehara, K. [Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Freemire, B. [Illinois Inst. of Technology, Chicago, IL (United States); Lane, P. [Illinois Inst. of Technology, Chicago, IL (United States); Torun, Y. [Illinois Inst. of Technology, Chicago, IL (United States); Haase, A. [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-05-03

    Ionization cooling of intense muon beams requires the operation of high-gradient, normal-conducting RF structures in the presence of strong magnetic fields. We have measured the breakdown rate in several RF cavities operating at several frequencies. Cavities operating within solenoidal magnetic fields B > 0.25 T show an increased RF breakdown rate at lower gradients compared with similar operation when B = 0 T. Ultimately, this breakdown behavior limits the maximum safe operating gradient of the cavity. Beyond ionization cooling, this issue affects the design of photoinjectors and klystrons, among other applications. We have built an 805 MHz pillbox-type RF cavity to serve as an experimental testbed for this phenomenon. This cavity is designed to study the problem of RF breakdown in strong magnetic fields using various cavity materials and surface treatments, and with precise control over sources of systematic error. We present results from tests in which the cavity was run with all copper surfaces in a variety of magnetic fields.

  7. Basic Studies of Distributed Discharge Limiters

    Science.gov (United States)

    2014-02-10

    radioactive sources , prior breakdown discharges, UV pre- excitation/pre-ionization, VUV radiation, multipactor, and field or triple-point emission; (2...o DC voltage bias effects and seed electron sources including radioactive sources , prior breakdown discharges, UV pre-excitation/pre-ionization, VUV ...found to be less susceptible to impurities and hydrogen Lyman-α emission remained dominant in the VUV regime. A MD- VUV source with a time averaged power

  8. Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping

    Science.gov (United States)

    Liu, Chao; Liu, Zhaojun; Huang, Tongde; Ma, Jun; May Lau, Kei

    2015-03-01

    We report selective growth of AlGaN/GaN high electron mobility transistors (HEMTs) on InGaN/GaN light emitting diodes (LEDs) for monolithic integration of III-nitride HEMT and LED devices (HEMT-LED). To improve the breakdown characteristics of the integrated HEMT-LED devices, carbon doping was introduced in the HEMT buffer by controlling the growth pressure and V/III ratio. The breakdown voltage of the fabricated HEMTs grown on LEDs was enhanced, without degradation of the HEMT DC performance. The improved breakdown characteristics can be attributed to better isolation of the HEMT from the underlying conductive p-GaN layer of the LED structure.

  9. Nuclear envelope breakdown induced by herpes simplex virus type 1 involves the activity of viral fusion proteins.

    Science.gov (United States)

    Maric, Martina; Haugo, Alison C; Dauer, William; Johnson, David; Roller, Richard J

    2014-07-01

    Herpesvirus infection reorganizes components of the nuclear lamina usually without loss of integrity of the nuclear membranes. We report that wild-type HSV infection can cause dissolution of the nuclear envelope in transformed mouse embryonic fibroblasts that do not express torsinA. Nuclear envelope breakdown is accompanied by an eight-fold inhibition of virus replication. Breakdown of the membrane is much more limited during infection with viruses that lack the gB and gH genes, suggesting that breakdown involves factors that promote fusion at the nuclear membrane. Nuclear envelope breakdown is also inhibited during infection with virus that does not express UL34, but is enhanced when the US3 gene is deleted, suggesting that envelope breakdown may be enhanced by nuclear lamina disruption. Nuclear envelope breakdown cannot compensate for deletion of the UL34 gene suggesting that mixing of nuclear and cytoplasmic contents is insufficient to bypass loss of the normal nuclear egress pathway.

  10. Transient Voltage Recorder

    Science.gov (United States)

    Medelius, Pedro J. (Inventor); Simpson, Howard J. (Inventor)

    2002-01-01

    A voltage transient recorder can detect lightning induced transient voltages. The recorder detects a lightning induced transient voltage and adjusts input amplifiers to accurately record transient voltage magnitudes. The recorder stores voltage data from numerous monitored channels, or devices. The data is time stamped and can be output in real time, or stored for later retrieval. The transient recorder, in one embodiment, includes an analog-to-digital converter and a voltage threshold detector. When an input voltage exceeds a pre-determined voltage threshold, the recorder stores the incoming voltage magnitude and time of arrival. The recorder also determines if its input amplifier circuits clip the incoming signal or if the incoming signal is too low. If the input data is clipped or too low, the recorder adjusts the gain of the amplifier circuits to accurately acquire subsequent components of the lightning induced transients.

  11. Study of Dielectric Breakdown Performance of Transformer Oil Based Magnetic Nanofluids

    Directory of Open Access Journals (Sweden)

    Yuzhen Lv

    2017-07-01

    Full Text Available Research on the transformer oil-based nanofluids (NFs has been raised expeditiously over the past decade. Although, there is discrepancy in the stated results and inadequate understanding of the mechanisms of improvement of dielectric nanofluids, these nanofluids have emerged as a potential substitute of mineral oils as insulating and heat removal fluids for high voltage equipment. The transformer oil (TO based magnetic fluids (ferrofluids may be regarded as the posterity insulation fluids as they propose inspiring unique prospectus to improve dielectric breakdown strength, as well as heat transfer efficiency, as compared to pure transformer oils. In this work, transformer oil-based magnetic nanofluids (MNFs are prepared by dispersal of Fe3O4 nanoparticles (MNPs into mineral oil as base oil, with various NPs loading from 5 to 80% w/v. The lightning impulse breakdown voltages (BDV measurement was conducted in accordance with IEC 60897 by using needle to sphere electrodes geometry. The test results showed that dispersion of magnetic NPs may improve the insulation strength of MO. With the increment of NPs concentrations, the positive lightning impulse (LI breakdown strength of TO is first raised, up to the highest value at 40% loading, and then tends to decrease at higher concentrations. The outcomes of negative LI breakdown showed that BDV of MNFs, with numerous loadings, were inferior to the breakdown strength of pure MO. The 40% concentration of nanoparticles (optimum concentration was selected, and positive and negative LI breakdown strength was also further studied at different sizes (10 nm, 20 nm, 30 nm and 40 nm of NPs and different electrode gap distances. Augmentation in the BDV of the ferrofluids (FFs is primarily because of dielectric and magnetic features of Fe3O4 nanoaprticles, which act as electron scavengers and decrease the rate of free electrons produced in the ionization process. Research challenges and technical difficulties

  12. Comparative study of electrical breakdown properties of deionized water and heavy water under pulsed power conditions

    Energy Technology Data Exchange (ETDEWEB)

    Veda Prakash, G.; Kumar, R.; Saurabh, K.; Nasir,; Anitha, V. P.; Chowdhuri, M. B.; Shyam, A. [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)

    2016-01-15

    A comparative study of electrical breakdown properties of deionized water (H{sub 2}O) and heavy water (D{sub 2}O) is presented with two different electrode materials (stainless steel (SS) and brass) and polarity (positive and negative) combinations. The pulsed (∼a few tens of nanoseconds) discharges are conducted by applying high voltage (∼a few hundred kV) pulse between two hemisphere electrodes of the same material, spaced 3 mm apart, at room temperature (∼26-28 °C) with the help of Tesla based pulse generator. It is observed that breakdown occurred in heavy water at lesser voltage and in short duration compared to deionized water irrespective of the electrode material and applied voltage polarity chosen. SS electrodes are seen to perform better in terms of the voltage withstanding capacity of the liquid dielectric as compared to brass electrodes. Further, discharges with negative polarity are found to give slightly enhanced discharge breakdown voltage when compared with those with positive polarity. The observations corroborate well with conductivity measurements carried out on original and post-treated liquid samples. An interpretation of the observations is attempted using Fourier transform infrared measurements on original and post-treated liquids as well as in situ emission spectra studies. A yet another important observation from the emission spectra has been that even short (nanosecond) duration discharges result in the formation of a considerable amount of ions injected into the liquid from the electrodes in a similar manner as reported for long (microseconds) discharges. The experimental observations show that deionised water is better suited for high voltage applications and also offer a comparison of the discharge behaviour with different electrodes and polarities.

  13. Pre-breakdown cavitation development in the dielectric fluid in the inhomogeneous, pulsed electric fields

    CERN Document Server

    Shneider, Mikhail N

    2014-01-01

    We consider the development of pre-breakdown cavitation nanopores appearing in the dielectric fluid under the influence of the electrostrictive stresses in the inhomogeneous pulsed electric field. It is shown that three characteristic regions can be distinguished near the needle electrode. In the first region, where the electric field gradient is greatest, the cavitation nanopores, occurring during the voltage nanosecond pulse, may grow to the size at which an electron accelerated by the field inside the pores can acquire enough energy for excitation and ionization of the liquid on the opposite pore wall, i.e., the breakdown conditions are satisfied. In the second region, the negative pressure caused by the electrostriction is large enough for the cavitation initiation (which can be registered by optical methods), but, during the voltage pulse, the pores do not reach the size at which the potential difference across their borders becomes sufficient for ionization or excitation of water molecules. And, in the ...

  14. Experimental study of electric breakdowns in liquid argon at centimeter scale

    CERN Document Server

    Blatter, A; Hsu, C -C; Janos, S; Kreslo, I; Luethi, M; von Rohr, C Rudolf; Schenk, M; Strauss, T; Weber, M S; Zeller, M

    2014-01-01

    In this paper we present results on measurements of the dielectric strength of liquid argon near its boiling point and cathode-anode distances in the range of 0.1 mm to 40 mm with spherical cathode and plane anode. We show that at such distances the applied electric field at which breakdowns occur is as low as 40 kV/cm. Flash-overs across the ribbed dielectric of the high voltage feed-through are observed for a length of 300 mm starting from a voltage of 55 kV. These results contribute to set reference for the breakdown-free design of ionization detectors, such as Liquid Argon Time Projection Chambers (LAr TPC).

  15. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Meng; Zhao, Yuning; Yan, Xiaodong; Li, Guowang; Verma, Jai; Fay, Patrick [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Nomoto, Kazuki; Zhu, Mingda; Hu, Zongyang; Protasenko, Vladimir; Song, Bo; Xing, Huili Grace; Jena, Debdeep, E-mail: djena@cornell.edu [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States); Bader, Samuel [Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)

    2015-12-07

    Molecular beam epitaxy grown GaN p-n vertical diodes are demonstrated on single-crystal GaN substrates. A low leakage current <3 nA/cm{sup 2} is obtained with reverse bias voltage up to −20 V. With a 400 nm thick n-drift region, an on-resistance of 0.23 mΩ cm{sup 2} is achieved, with a breakdown voltage corresponding to a peak electric field of ∼3.1 MV/cm in GaN. Single-crystal GaN substrates with very low dislocation densities enable the low leakage current and the high breakdown field in the diodes, showing significant potential for MBE growth to attain near-intrinsic performance when the density of dislocations is low.

  16. New models and distributions of the electrical breakdown time delay in neon

    Energy Technology Data Exchange (ETDEWEB)

    Stamenkovic, S N, E-mail: ssuzana@pmf.ni.ac.rs [Department of Physics, University of Nis, P.O. BOX 224, 18001 Nis (Serbia)

    2010-11-01

    The measurements of the electrical breakdown time delay t{sub d} for a wide range of working voltages and at different preionization levels are presented. The statistical breakdown time delay t{sub s} and the discharge formative time t{sub f} are experimentally separated and theoretical models of their dependencies on the overvoltage and number densities of residual charges during relaxation are suggested. Several empirical and semiempirical models are used to describe the formative time delay dependence on working voltages t{sub f} (U). The empirical and theoretical models from the literature are also applied to the experimental data, without and with empirical corrections. Moreover, several new distributions are experimentally obtained: Gauss-exponential, Gaussian and double Gaussian ones for the statistical time delay, as well as Gaussian and double Gaussian distributions for the formative time. The measurements of the breakdown time delay at different preionization levels (afterglow periods) t{sub d} ({tau}) obtained with a galvanic layer of gold and a sub-layer of nickel on the copper cathode are compared to the measurements with a vacuum deposited gold layer on the cathode surface. It was found that the surface charges retaining on a galvanic layer of gold influence the breakdown time delay which leads to double Gaussian distributions of the formative and statistical time delay.

  17. AC electrical breakdown phenomena of epoxy/layered silicate nanocomposite in needle-plate electrodes.

    Science.gov (United States)

    Park, Jae-Jun; Lee, Jae-Young

    2013-05-01

    Epoxy/layered silicate nanocomposite for the insulation of heavy electric equipments were prepared by dispersing 1 wt% of a layered silicate into an epoxy matrix with a homogenizing mixer and then AC electrical treeing and breakdown tests were carried out. Wide-angle X-ray diffraction (WAXD) analysis and transmission electron microscopy (TEM) observation showed that nano-sized monolayers were exfoliated from a multilayered silicate in the epoxy matrix. When the nano-sized silicate layers were incorporated into the epoxy matrix, the breakdown rate in needle-plate electrode geometry was 10.6 times lowered than that of the neat epoxy resin under the applied electrical field of 520.9 kV/mm at 30 degrees C, and electrical tree propagated with much more branches in the epoxy/layered silicate nanocomposite. These results showed that well-dispersed nano-sized silicate layers retarded the electrical tree growth rate. The effects of applied voltage and ambient temperature on the tree initiation, growth, and breakdown rate were also studied, and it was found that the breakdown rate was largely increased, as the applied voltage and ambient temperature increased.

  18. Improving thrust by pulse-induced breakdown enhancement in AC surface dielectric barrier discharge actuators for airflow control

    Science.gov (United States)

    Yan, Huijie; Yang, Liang; Qi, Xiaohua; Ren, Chunsheng

    2016-07-01

    The characteristics of a plate-to-plate AC surface dielectric barrier discharge (SDBD) actuator using the pulse-induced breakdown enhancing method are experimentally investigated. The encapsulated electrode is supplied with a sine high AC voltage, while the exposed electrode is feed by a synchronized pulse voltage. Based on the thrust force and power consumption measurements, a parametric study was performed using a positive pulse applied at the trough phase of the AC cycles in which the thrust force was observed to increase by about 100% to 300% and the efficiency up to about 100% compared with the AC-only supply conditions for different AC voltages within the tested range. The pulse-induced breakdown effect was analyzed from the electrical and light emission waveforms to reveal the underlying mechanism. The surface potential due to the charge deposition effect was also measured using a specially designed corona-like discharge potential probe. It is shown that the pulse-induced breakdown was able to cause a temporarily intensified local electric field to enhance the glow-like discharge and meanwhile increase the time-average surface potential in the region further downstream. The improvement in the force by the enhancement in the pulse-induced breakdown was mainly due to enhancements in the glow-like discharge and the surface potential increment, with the latter being more important when the AC voltage is higher.

  19. Corrosion of Copper and Oxidation of Dielectric Liquids in High Voltage Transformers

    OpenAIRE

    Tronstad, Ingvild

    2013-01-01

    Breakdowns in high voltage transformers are of major concern. It is therefore a goal to prevent this from happening. Chemical degradation (e.g. oxidation, hydrolysis and corrosion) of the insulation systems and windings and formation of deposits are some of the most important causes of breakdowns in oil-paper insulated transformers.Several of the methods for studying the oxidation stability of dielectric liquids are time consuming and involve harsh conditions, far from the conditions in the t...

  20. VOLTAGE STABILITY IMPROVEMENT IN POWER SYSTEM BY USING STATCOM

    Directory of Open Access Journals (Sweden)

    A.ANBARASAN

    2012-11-01

    Full Text Available Voltage stability problems usually occur in heavily loaded systems. Nowadays the power demand increases enormously, hence in a large interconnected power system network subject to stress conditions. This situation can be handled by increasing the generation or reducing the transmission losses. When the load increases suddenly, voltage magnitude also varies beyond the permissible voltage stability limit. But the voltage magnitude must be maintained within the limit for proper operation of the system. Hence, voltage stability must be improved by providing suitable reactive power compensation. The proposed work was analyzed using IEEE 14 bus test system. The STATCOM improves the voltage stability margin of the system.

  1. Pulse, dc and ac breakdown in high pressure gas discharge lamps

    Science.gov (United States)

    Beckers, J.; Manders, F.; Aben, P. C. H.; Stoffels, W. W.; Haverlag, M.

    2008-07-01

    An optical study of pulse, dc, and ac (50-400 kHz) ignition of metal halide lamps has been performed by investigating intensified CCD camera images of the discharges. The ceramic lamp burners were filled with xenon gas at pressures of 300 and 700 mbar. In comparison with dc and pulse ignition, igniting with an ac voltage decreases the ignition voltage by up to 56% and the breakdown time scales get much longer (~10-3 s compared with ~10-7 s for pulse ignition). Increasing the ac frequency decreases the ignition voltages and changes the ionization channel shapes. External irradiation of UV light can have either an increasing or a decreasing effect on ignition voltages.

  2. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  3. Maximum permissible voltage of YBCO coated conductors

    Energy Technology Data Exchange (ETDEWEB)

    Wen, J.; Lin, B.; Sheng, J.; Xu, J.; Jin, Z. [Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai (China); Hong, Z., E-mail: zhiyong.hong@sjtu.edu.cn [Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai (China); Wang, D.; Zhou, H.; Shen, X.; Shen, C. [Qingpu Power Supply Company, State Grid Shanghai Municipal Electric Power Company, Shanghai (China)

    2014-06-15

    Highlights: • We examine three kinds of tapes’ maximum permissible voltage. • We examine the relationship between quenching duration and maximum permissible voltage. • Continuous I{sub c} degradations under repetitive quenching where tapes reaching maximum permissible voltage. • The relationship between maximum permissible voltage and resistance, temperature. - Abstract: Superconducting fault current limiter (SFCL) could reduce short circuit currents in electrical power system. One of the most important thing in developing SFCL is to find out the maximum permissible voltage of each limiting element. The maximum permissible voltage is defined as the maximum voltage per unit length at which the YBCO coated conductors (CC) do not suffer from critical current (I{sub c}) degradation or burnout. In this research, the time of quenching process is changed and voltage is raised until the I{sub c} degradation or burnout happens. YBCO coated conductors test in the experiment are from American superconductor (AMSC) and Shanghai Jiao Tong University (SJTU). Along with the quenching duration increasing, the maximum permissible voltage of CC decreases. When quenching duration is 100 ms, the maximum permissible of SJTU CC, 12 mm AMSC CC and 4 mm AMSC CC are 0.72 V/cm, 0.52 V/cm and 1.2 V/cm respectively. Based on the results of samples, the whole length of CCs used in the design of a SFCL can be determined.

  4. The influence of Ac parameters in the process of micro-arc oxidation film electric breakdown

    Directory of Open Access Journals (Sweden)

    Ma Jin

    2016-01-01

    Full Text Available This paper studies the electric breakdown discharge process of micro-arc oxidation film on the surface of aluminum alloy. Based on the analysis of the AC parameters variation in the micro-arc oxidation process, the following conclusions can be drawn: The growth of oxide film can be divided into three stages, and Oxide film breakdown discharge occurs twice in the micro-arc oxidation process. The first stage is the formation and disruptive discharge of amorphous oxide film, producing the ceramic oxide granules, which belong to solid dielectric breakdown. In this stage the membrane voltage of the oxide film plays a key role; the second stage is the formation of ceramic oxide film, the ceramic oxide granules turns into porous structure oxide film in this stage; the third stage is the growth of ceramic oxide film, the gas film that forms in the oxide film’s porous structure is electric broken-down, which is the second breakdown discharge process, the current density on the oxide film surface could affect the breakdown process significantly.

  5. Mixed voltage VLSI design

    Science.gov (United States)

    Panwar, Ramesh; Rennels, David; Alkalaj, Leon

    1993-01-01

    A technique for minimizing the power dissipated in a Very Large Scale Integration (VLSI) chip by lowering the operating voltage without any significant penalty in the chip throughput even though low voltage operation results in slower circuits. Since the overall throughput of a VLSI chip depends on the speed of the critical path(s) in the chip, it may be possible to sustain the throughput rates attained at higher voltages by operating the circuits in the critical path(s) with a high voltage while operating the other circuits with a lower voltage to minimize the power dissipation. The interface between the gates which operate at different voltages is crucial for low power dissipation since the interface may possibly have high static current dissipation thus negating the gains of the low voltage operation. The design of a voltage level translator which does the interface between the low voltage and high voltage circuits without any significant static dissipation is presented. Then, the results of the mixed voltage design using a greedy algorithm on three chips for various operating voltages are presented.

  6. Extended scaling and Paschen law for micro-sized radiofrequency plasma breakdown

    Science.gov (United States)

    Lee, Min Uk; Lee, Jimo; Lee, Jae Koo; Yun, Gunsu S.

    2017-03-01

    The single particle motion analysis and particle-in-cell merged with Monte Carlo collision (PIC/MCC) simulations are compared to explain substantial breakdown voltage reduction for helium microwave discharge above a critical frequency corresponding to the transition from the drift-dominant to the diffusion-dominant electron loss regime. The single particle analysis suggests that the transition frequency is proportional to the product of {p}-{m} and {d}-({m+1)} where p is the neutral gas pressure, d is the gap distance, and m is a numerical parameter, which is confirmed by the PIC simulation. In the low-frequency or drift-dominant regime, i.e., γ - {{r}}{{e}}{{g}}{{i}}{{m}}{{e}}, the secondary electron emission induced by ion drift motion is the key parameter for determining the breakdown voltage. The fluid analysis including the secondary emission coefficient, γ , induces the extended Paschen law that implies the breakdown voltage is determined by pd, f/p, γ , and d/R where f is the frequency of the radio or microwave frequency source, and R is the diameter of electrode. The extended Paschen law reproduces the same scaling law for the transition frequency and is confirmed by the independent PIC and fluid simulations.

  7. High-voltage 4H-SiC trench MOS barrier Schottky rectifier with low forward voltage drop using enhanced sidewall layer

    Science.gov (United States)

    Cho, Doohyung; Sim, Seulgi; Park, Kunsik; Won, Jongil; Kim, Sanggi; Kim, Kwangsoo

    2015-12-01

    In this paper, a 4H-SiC trench MOS barrier Schottky (TMBS) rectifier with an enhanced sidewall layer (ESL) is proposed. The proposed structure has a high doping concentration at the trench sidewall. This high doping concentration improves both the reverse blocking and forward characteristics of the structure. The ESL-TMBS rectifier has a 7.4% lower forward voltage drop and a 24% higher breakdown voltage. However, this structure has a reverse leakage current that is approximately three times higher than that of a conventional TMBS rectifier owing to the reduction in energy barrier height. This problem is solved when ESL is used partially, since its use provides a reverse leakage current that is comparable to that of a conventional TMBS rectifier. Thus, the forward voltage drop and breakdown voltage improve without any loss in static and dynamic characteristics in the ESL-TMBS rectifier compared with the performance of a conventional TMBS rectifier.

  8. ASPECTS OF SURGE ARRESTERS’ MAXIMUM OPERATING VOLTAGE CHOICE FOR ELECTRICAL EQUIPMENT INSULATION PROTECTION IN 6-35 KV MAINS

    Directory of Open Access Journals (Sweden)

    Yu. N. Shumilov

    2013-09-01

    Full Text Available The paper shows that, in 6-35 kV mains, application of a non-linear surge arrester (SA with the maximum continuous admissible operating voltage which is 10% higher than the mains’ maximum operating voltage results in the SA protection from overheating and subsequent breakdown at nonnormable lifetime of single-phase arc faults.

  9. Low voltage operation of plasma focus.

    Science.gov (United States)

    Shukla, Rohit; Sharma, S K; Banerjee, P; Das, R; Deb, P; Prabahar, T; Das, B K; Adhikary, B; Shyam, A

    2010-08-01

    Plasma foci of compact sizes and operating with low energies (from tens of joules to few hundred joules) have found application in recent years and have attracted plasma-physics scientists and engineers for research in this direction. We are presenting a low energy and miniature plasma focus which operates from a capacitor bank of 8.4 muF capacity, charged at 4.2-4.3 kV and delivering approximately 52 kA peak current at approximately 60 nH calculated circuit inductance. The total circuit inductance includes the plasma focus inductance. The reported plasma focus operates at the lowest voltage among all reported plasma foci so far. Moreover the cost of capacitor bank used for plasma focus is nearly 20 U.S. dollars making it very cheap. At low voltage operation of plasma focus, the initial breakdown mechanism becomes important for operation of plasma focus. The quartz glass tube is used as insulator and breakdown initiation is done on its surface. The total energy of the plasma focus is approximately 75 J. The plasma focus system is made compact and the switching of capacitor bank energy is done by manual operating switch. The focus is operated with hydrogen and deuterium filled at 1-2 mbar.

  10. Electrical breakdown phenomena of dielectric elastomers

    DEFF Research Database (Denmark)

    Yu, Liyun; Mateiu, Ramona Valentina; Skov, Anne Ladegaard

    years. However, optimization with respect to the dielectric permittivity solely may lead to other problematic phenomena such as premature electrical breakdown. In this work, we focus on the chloro propyl functionalized silicone elastomers prepared in Madsen et al[2] and we investigate the electrical...... breakdown patterns of two similar chloro propyl functionalized silicone elastomers which break down electrically in a rather different way as well as we compare them to a silicone based reference. Scanning Electron Microscopy (SEM) and Energy Dispersive X-Ray Spectroscopy (EDS) are used to evaluate...... the elastomers after electrical breakdown....

  11. Microwave gas breakdown in elliptical waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Koufogiannis, I. D.; Sorolla, E., E-mail: eden.sorolla@epfl.ch; Mattes, M. [École Polytechnique Fédérale de Lausanne, Laboratoire d’Électromagnétisme et d' Acoustique (LEMA), Station 11, CH-1015 Lausanne (Switzerland)

    2014-01-15

    This paper analyzes the microwave gas discharge within elliptical waveguides excited by the fundamental mode. The Rayleigh-Ritz method has been applied to solve the continuity equation. The eigenvalue problem defined by the breakdown condition has been solved and the effective diffusion length of the elliptical waveguide has been calculated, what is used to find the corona threshold. This paper extends the microwave breakdown model developed for circular waveguides and shows the better corona withstanding capabilities of elliptical waveguides. The corona breakdown electric field threshold obtained with the variational method has been compared with the one calculated with the Finite Elements Method, showing excellent agreement.

  12. The Multistability of Technological Breakdowns in Education

    DEFF Research Database (Denmark)

    Andersen, Bjarke Lindsø; Tafdrup, Oliver Alexander

    2017-01-01

    technological breakdowns become a more and more ubiquitous phenomenon due to the rapid increase of technological artefacts utilized for educational purposes (Riis, 2012). The breakdowns impact the educational practice with consequences ranging from creating small obstacles to rendering it impossible to conduct......Introduction Everyone who is involved with modern technological artefacts such as computers, software and tablets has experienced situations where the artefacts suddenly cease to function properly. This is commonly known as a technological breakdown. Within education and the praxis of teaching...

  13. Nuclear envelope breakdown induced by herpes simplex virus type 1 involves the activity of viral fusion proteins

    Energy Technology Data Exchange (ETDEWEB)

    Maric, Martina; Haugo, Alison C. [Department of Microbiology, University of Iowa, Iowa City, IA 52242 (United States); Dauer, William [Department of Neurology, University of Michigan, Ann Arbor, MI 48109 (United States); Johnson, David [Department of Microbiology and Immunology, Oregon Health Sciences University, Portland, OR 97201 (United States); Roller, Richard J., E-mail: richard-roller@uiowa.edu [Department of Microbiology, University of Iowa, Iowa City, IA 52242 (United States)

    2014-07-15

    Herpesvirus infection reorganizes components of the nuclear lamina usually without loss of integrity of the nuclear membranes. We report that wild-type HSV infection can cause dissolution of the nuclear envelope in transformed mouse embryonic fibroblasts that do not express torsinA. Nuclear envelope breakdown is accompanied by an eight-fold inhibition of virus replication. Breakdown of the membrane is much more limited during infection with viruses that lack the gB and gH genes, suggesting that breakdown involves factors that promote fusion at the nuclear membrane. Nuclear envelope breakdown is also inhibited during infection with virus that does not express UL34, but is enhanced when the US3 gene is deleted, suggesting that envelope breakdown may be enhanced by nuclear lamina disruption. Nuclear envelope breakdown cannot compensate for deletion of the UL34 gene suggesting that mixing of nuclear and cytoplasmic contents is insufficient to bypass loss of the normal nuclear egress pathway. - Highlights: • We show that wild-type HSV can induce breakdown of the nuclear envelope in a specific cell system. • The viral fusion proteins gB and gH are required for induction of nuclear envelope breakdown. • Nuclear envelope breakdown cannot compensate for deletion of the HSV UL34 gene.

  14. Low-profile high-voltage compact gas switch

    Energy Technology Data Exchange (ETDEWEB)

    Goerz, D.A.; Wilson, M.J.; Speer, R.D.

    1997-06-30

    This paper discusses the development and testing of a low-profile, high-voltage, spark-gap switch designed to be closely coupled with other components into an integrated high-energy pulsed-power source. The switch is designed to operate at 100 kV using SF6 gas pressurized to less than 0.7 MPa. The volume of the switch cavity region is less than 1.5 cm3, and the field stress along the gas-dielectric interface is as high as 130 kV/cm. The dielectric switch body has a low profile that is only I -cm tall at its greatest extent and nominally 2-mm thick over most of its area. This design achieves a very low inductance of less than 5 nH, but results in field stresses exceeding 500 kV/cm in the dielectric material. Field modeling was done to determine the appropriate shape for the highly stressed insulator and electrodes, and special manufacturing techniques were employed to mitigate the usual mechanisms that induce breakdown and failure in solid dielectrics. Static breakdown tests verified that the switch operates satisfactorily at 100 kV levels. The unit has been characterized with different shaped electrodes having nominal gap spacings of 2.0, 2.5, and 3.0 mm. The relationship between self-break voltage and operating pressure agrees well with published data on gas properties, accounting for the field enhancements of the electrode shapes being used. Capacitor discharge tests in a low inductance test fixture exhibited peak currents up to 25 kA with characteristic frequencies of the ringdown circuit ranging from 10 to 20 MHz. The ringdown waveforms and scaling of measured parameters agree well with circuit modeling of the switch and test fixture. Repetitive operation has been demonstrated at moderate rep-rates up to 15 Hz, limited by the power supply being used. Preliminary tests to evaluate lifetime of the compact switch assembly have been encouraging. In one case, after more than 7,000 high-current ringdown tests with approximately 30 C of total charge transferred, the

  15. Voltage holding optimization of the MITICA electrostatic accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Pilan, N., E-mail: nicola.pilan@igi.cnr.it [Consorzio RFX, Associazione EURATOM-ENEA sulla Fusione, Corso Stati Uniti 4, I-35127 Padova (Italy); Bettini, P. [Consorzio RFX, Associazione EURATOM-ENEA sulla Fusione, Corso Stati Uniti 4, I-35127 Padova (Italy); DII, Università di Padova, v. Gradenigo 6/A, I-35131 Padova (Italy); De Lorenzi, A. [Consorzio RFX, Associazione EURATOM-ENEA sulla Fusione, Corso Stati Uniti 4, I-35127 Padova (Italy); Specogna, R. [DIEGM, Università di Udine, v. delle Scienze 208, I-33100 Udine (Italy)

    2013-10-15

    Highlights: ► A set of electrostatic analyses of the region surrounding the MITICA electrostatic accelerator has been carried out. ► The distribution of the breakdown probability of the system has been calculated. ► The analyses have allowed identifying the weak point of the system to address the future design optimizations. -- Abstract: Two Heating Neutral Beam Injectors (H-NBI) are planned to be installed in ITER with a total delivered heating power of 33 MW [1]. The main parameters are: 870 kV acceleration voltage with 46 A beam current for hydrogen beam, and 1 MV voltage with 40 A current for deuterium beam. The voltage holding in the 1 MV ITER Neutral Beam Accelerator is recognized to be one of the most critical issues for long pulse (3600 s) beam operation, due to the complex electrostatic structure formed by electrodes polarized at different potentials immersed in vacuum or low-pressure gas. As a matter of fact, the system shall work in a p × d range at the left of the Paschen curve where the classical Townsend breakdown criterion is no longer valid. The voltage holding is governed by the mechanism of the long gap insulation in high vacuum, not yet well consolidated from the physical point of view. This paper is aimed to describe the optimization of the voltage holding capability for MITICA electrostatic accelerator. The results of this analysis will constitute the input for the probabilistic model [3] which is adopted to predict the breakdown probability by means of 2D analyses of the multi electrode – multi voltage system.

  16. Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination

    Science.gov (United States)

    He, Yan Jing; Lv, Hong Liang; Tang, Xiao Yan; Song, Qing Wen; Zhang, Yi Meng; Han, Chao; Zhang, Yi Men; Zhang, Yu Ming

    2017-03-01

    A lightly doped P-well field-limiting rings (FLRs) termination on 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors (VDMOSFETs) has been investigated. Based on the simulation, the proposed termination applied to 4H-SiC VDMOSFET could achieve an almost same breakdown voltage (BV) and have the advantage of lower ion-implantation damage comparing with P+ FLRs termination. Meanwhile, this kind of termination also reduces the difficulty and consumption of fabrication process. 4H-SiC VDMOSFETs with lightly doped P-well (FLRs) termination have been fabricated on 10 μm thick epi-layer with nitrogen doping concentration of 6.2 × 1015 cm-3. The maximum breakdown voltage of the 4H-SiC VDMOSFETs has achieved as high as 1610 V at a current of 15 μA, which is very close to the simulated result of 1643 V and about 90% of the plane parallel breakdown voltage of 1780 V. It is considered that P-well FLRs termination is an effective, robust and process-tolerant termination structure suitable for 4H-SiC VDMOSFET.

  17. Family breakdown in Bogotá

    Directory of Open Access Journals (Sweden)

    Ofelia Restrepo Vélez

    2010-02-01

    Full Text Available Forced displacement not only disperses and uproots families butalso fractures their framework of beliefs, identities, daily routines,relationships and social fabric, and causes physical, emotional andpsychological breakdown.

  18. Advances in high voltage insulation and arc interruption in SF6 and vacuum

    CERN Document Server

    Maller, V N

    1982-01-01

    Advances in High Voltage Insulation and Arc Interruption in SF6 and Vacuum deals with high voltage breakdown and arc extinction in sulfur hexafluoride (SF6) and high vacuum, with special emphasis on the application of these insulating media in high voltage power apparatus and devices. The design and developmental aspects of various high voltage power apparatus using SF6 and high vacuum are highlighted. This book is comprised of eight chapters and opens with a discussion on electrical discharges in SF6 and high vacuum, along with the properties and handling of SF6 gas. The following chapters fo

  19. Humidity effects on wire insulation breakdown strength.

    Energy Technology Data Exchange (ETDEWEB)

    Appelhans, Leah

    2013-08-01

    Methods for the testing of the dielectric breakdown strength of insulation on metal wires under variable humidity conditions were developed. Two methods, an ASTM method and the twisted pair method, were compared to determine if the twisted pair method could be used for determination of breakdown strength under variable humidity conditions. It was concluded that, although there were small differences in outcomes between the two testing methods, the non-standard method (twisted pair) would be appropriate to use for further testing of the effects of humidity on breakdown performance. The dielectric breakdown strength of 34G copper wire insulated with double layer Poly-Thermaleze/Polyamide-imide insulation was measured using the twisted pair method under a variety of relative humidity (RH) conditions and exposure times. Humidity at 50% RH and below was not found to affect the dielectric breakdown strength. At 80% RH the dielectric breakdown strength was significantly diminished. No effect for exposure time up to 140 hours was observed at 50 or 80%RH.

  20. The Dynamic Fracture Process in Rocks Under High-Voltage Pulse Fragmentation

    Science.gov (United States)

    Cho, Sang Ho; Cheong, Sang Sun; Yokota, Mitsuhiro; Kaneko, Katsuhiko

    2016-10-01

    High-voltage pulse technology has been applied to rock excavation, liberation of microfossils, drilling of rocks, oil and water stimulation, cleaning castings, and recycling products like concrete and electrical appliances. In the field of rock mechanics, research interest has focused on the use of high-voltage pulse technology for drilling and cutting rocks over the past several decades. In the use of high-voltage pulse technology for drilling and cutting rocks, it is important to understand the fragmentation mechanism in rocks subjected to high-voltage discharge pulses to improve the effectiveness of drilling and cutting technologies. The process of drilling rocks using high-voltage discharge is employed because it generates electrical breakdown inside the rocks between the anode and cathode. In this study, seven rock types and a cement paste were electrically fractured using high-voltage pulse discharge to investigate their dielectric breakdown properties. The dielectric breakdown strengths of the samples were compared with their physical and mechanical properties. The samples with dielectric fractured were scanned using a high-resolution X-ray computed tomography system to observe the fracture formation associated with mineral constituents. The fracture patterns of the rock samples were analyzed using numerical simulation for high-voltage pulse-induced fragmentation that adopts the surface traction and internal body force conditions.

  1. Characterisation of the VELO High Voltage System

    CERN Document Server

    Rakotomiaramanana, B; Eklund, L

    2008-01-01

    The high voltage system supplies the bias voltage to the 88 silicon sensors which comprise the LHCb Vertex Locator (VELO). This note describes the results of the tests which have been performed on the hardware of the high voltage system of the VELO. Each individual test detailed in this note corresponds to a specific requirement of the system. These requirements arise primarily from ensuring the safety of the silicon sensors and the quality of the data taken from the VELO modules. The tests performed are in four categories: normal operation of the high voltage system; vercation of its stability under operation; discussion of its behaviour in failure modes; and details of operation at low voltage. Noteworthy issues, identified through the tests, include the behaviour of the high voltage modules at voltages below 9V, the current limit that can be applied during ramping of the voltage, and the speed with which the voltage is cut during failures of the system. The results of these tests provide high confidence th...

  2. Characterisation of the VELO High Voltage System

    CERN Document Server

    Rakotomiaramanana, B; Parkes, C; Eklund, L

    2008-01-01

    The high voltage system supplies the bias voltage to the 88 silicon sensors which comprise the LHCb Vertex Locator (VELO). This note describes the results of the tests which have been performed on the hardware of the high voltage system of the VELO. Each individual test detailed in this note corresponds to a specific requirement of the system. These requirements arise primarily from ensuring the safety of the silicon sensors and the quality of the data taken from the VELO modules. The tests performed are in four categories: normal operation of the high voltage system; verification of its stability under operation; discussion of its behaviour in failure modes; and details of operation at low voltage. Noteworthy issues, identified through the tests, include the behaviour of the high voltage modules at voltages below 9V, the current limit that can be applied during ramping of the voltage, and the speed with which the voltage is cut during failures of the system. The results of these tests provide high confidence...

  3. Dielectric breakdown in nano-porous thin films

    Science.gov (United States)

    Borja, Juan Pablo

    Unknown to most computer users and mobile device enthusiasts, we have finally entered into a critical age of chip manufacturing. January of 2014 marks the official start of the quest by the semiconductor industry to successfully integrate sub 14nm process technology nodes in accordance to the International Technology Roadmap for Semiconductors (ITRS). The manufacturing of nano-scale features represents a major bottleneck of its own. However, a bigger challenge lies in reliably isolating the massive chip interconnect network. The present work is aimed at generating a theoretical and experimental framework to predict dielectric breakdown for thin films used in computer chip components. Here, a set of experimental techniques are presented to assess and study dielectric failure in novel thin films. A theory of dielectric breakdown in thin nano-porous films is proposed to describe combined intrinsic and metal ion catalyzed failure. This theory draws on experimental evidence as well as fundamental concepts from mass and electronic charge transport. The drift of metal species was found to accelerate intrinsic dielectric failure. The solubility of metals species such as Cu was found to range from 7.0x1025 ions/m3 to 1.86x1026 ions/m3 in 7% porous SiCOH films. The diffusion coefficient for Cu species was found to span from 4.2x10-19 m2/s to 1.86x10-21 m2/s. Ramped voltage stress experiments were used to identify intrinsic failure from metal catalyzed failure. Intrinsic breakdown is defined when time to failure against applied field ramp rate results in ∂(ln(TTF))/∂(ln(R)) ≈ -1. Intrinsic failure was studied using Au. Here, ∂(ln(TTF))/∂(ln(R)) ≈ -0.95, which is an experimental best case scenario for intrinsic failure. Au is commonly reluctant to ionize which means that failure occurs in the absence of ionic species. Metal catalyzed failure was investigated using reactive electrodes such as Cu, and Ag. Here, trends for ∂(ln(TTF))/∂(ln(R)) significantly

  4. STUDENT AWARD FINALIST: Study of Self-Absorbed Vacuum Ultraviolet Radiation during Pulsed Atmospheric Breakdown in Air

    Science.gov (United States)

    Laity, George; Fierro, Andrew; Hatfield, Lynn; Neuber, Andreas

    2011-10-01

    This paper describes recent experiments to investigate the role of self-produced vacuum ultraviolet (VUV) radiation in the physics of pulsed atmospheric breakdown. A unique apparatus was constructed which enables the detailed exploration of VUV light in the range 115-135 nm, which is emitted from breakdown between two point-point electrodes in an air environment at atmospheric pressure. Time-resolved diagnostics include VUV sensitive photomultipliers, intensified CCD imaging, optically isolated high voltage probes, and fast rise-time Rogowski current monitors. Temporally resolved spectroscopy from air breakdowns revealed VUV emission is released during the initial streamer phase before voltage collapse, with the majority of the emission lines identified from various atmospheric gases or surface impurities. Imaging of VUV radiation was performed which conserved the spatial emission profile, and distinct differences between nitrogen and oxygen VUV emission during onset of breakdown have been observed. Specifically, the self-absorption of HI, OI, and NI lines is addressed which elucidates the role of radiation transport during the photon-dominated streamer breakdown process. Supported by AFOSR, NASA / TSGC, DEPS, and IEEE DEIS.

  5. RF Cavity Induced Sensitivity Limitations on Beam Loss Monitors

    Science.gov (United States)

    Kastriotou, M.; Degiovanni, A.; Sousa, F. S. Domingues; Effinger, E.; Holzer, E. B.; Quirante, J. L. Navarro; del Busto, E. N.; Tecker, F.; Viganò, W.; Welsch, C. P.; Woolley, B. J.

    Due to the secondary showers generated when a particle hits the vacuum chamber, beam losses at an accelerator may be detected via radiation detectors located near the beam line. Several sources of background can limit the sensitivity and reduce the dynamic range of a Beam Loss Monitor (BLM). This document concentrates on potential sources of background generated near high gradient RF cavities due to dark current and voltage breakdowns. An optical fibre has been installed at an experiment of the Compact Linear Collider (CLIC) Test Facility (CTF3), where a dedicated study of the performance of a loaded and unloaded CLIC accelerating structure is undergoing. An analysis of the collected data and a benchmarking simulation are presented to estimate BLM sensitivity limitations. Moreover, the feasibility for the use of BLMs optimised for the diagnostics of RF cavities is discussed.

  6. A computational study of the topology of vortex breakdown

    Science.gov (United States)

    Spall, Robert E.; Gatski, Thomas B.

    1991-01-01

    A fully three-dimensional numerical simulation of vortex breakdown using the unsteady, incompressible Navier-Stokes equations has been performed. Solutions to four distinct types of breakdown are identified and compared with experimental results. The computed solutions include weak helical, double helix, spiral, and bubble-type breakdowns. The topological structure of the various breakdowns as well as their interrelationship are studied. The data reveal that the asymmetric modes of breakdown may be subject to additional breakdowns as the vortex core evolves in the streamwise direction. The solutions also show that the freestream axial velocity distribution has a significant effect on the position and type of vortex breakdown.

  7. Effect of voltage shape of electrical power supply on radiation and density of a cold atmospheric argon plasma jet

    OpenAIRE

    F. Sohbatzadeh; Bagheri, M; S. Motallebi

    2017-01-01

    In this work, we investigated generating argon cold plasma jet at atmospheric pressure based on dielectric barrier discharge configuration using three electrical power supplies of sinusoidal, pulsed and saw tooth high voltage shapes at 8 KHZ. At first; we describe the electronic circuit features for generating high voltage (HV) wave forms including saw tooth, sinusoidal and pulsed forms. Then, we consider the effect of voltage shape on the electrical breakdown. Relative concentrations of chem...

  8. Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

    Science.gov (United States)

    Vizkelethy, G.; King, M. P.; Aktas, O.; Kizilyalli, I. C.; Kaplar, R. J.

    2017-08-01

    Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories' nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. The displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.

  9. 46 CFR 111.01-17 - Voltage and frequency variations.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Voltage and frequency variations. 111.01-17 Section 111... ELECTRIC SYSTEMS-GENERAL REQUIREMENTS General § 111.01-17 Voltage and frequency variations. Unless... and +6 percent to −10 percent of rated voltage. This limitation does not address transient conditions....

  10. Note: Complementary metal-oxide-semiconductor high voltage pulse generation circuits.

    Science.gov (United States)

    Sun, Jiwei; Wang, Pingshan

    2013-10-01

    We present two types of on-chip pulse generation circuits. The first is based on CMOS pulse-forming-lines (PFLs). It includes a four-stage charge pump, a four-stacked-MOSFET switch and a 5 mm long PFL. The circuit is implemented in a 0.13 μm CMOS process. Pulses of ~1.8 V amplitude with ~135 ps duration on a 50 Ω load are obtained. The obtained voltage is higher than 1.6 V, the rated operating voltage of the process. The second is a high-voltage Marx generator which also uses stacked MOSFETs as high voltage switches. The output voltage is 11.68 V, which is higher than the highest breakdown voltage (~10 V) of the CMOS process. These results significantly extend high-voltage pulse generation capabilities of CMOS technologies.

  11. Effects of void size and gas content on electrical breakdown in lightweight, mechanically compliant, void-filled dielectrics

    Science.gov (United States)

    Anderson, R. A.; Lagasse, R. R.; Russick, E. M.; Schroeder, J. L.

    2002-03-01

    Dielectric potting materials (encapsulants) are used to prevent air breakdown in high-voltage electrical devices. We report breakdown strengths in void-filled encapsulants, stressed with unipolar voltage pulses of the order of 10 μs duration. High strengths, on the order of 100 kV mm-1, are measured under these test conditions. The materials studied include low-density open celled gel-derived foams with cell sizes of 4 μm or less, closed celled CO2-blown polystyrene and urethane foams, and epoxies containing 48 vol % of hollow glass microballoon (GMB) fillers. These last specimens varied the void gas (N2 or SO2) and also the void diameters (tens to hundreds of μm). Our measurements are thought to be directly sensitive to the rate of field-induced ionization events in the void gas; however, the breakdown strengths of the materials tested appeared to vary in direct proportion with the conventional Paschen-law gas-discharge inception threshold, the electric stress at which gas-ionization avalanches become possible. The GMB-epoxy specimens displayed this type of dependence of breakdown strength on the void-gas density and void size, but the measurements were an order of magnitude above the conventional predictions. Small-celled foams also showed increased breakdown strengths with decreased cell size, although their irregular void geometry prevented a direct comparison with the more uniformly structured microballoon-filled encapsulants. The experimental observations are consistent with a breakdown mechanism in which the discharge of a few voids can launch a full breakdown in the composite material.

  12. Frequency and Temperature Dependence of Electrical Breakdown at 21, 30 and 39 GHz

    CERN Document Server

    Braun, Hans Heinrich; Wilson, Ian H; Wuensch, Walter

    2003-01-01

    A TeV-range e+e- linear collider has emerged as one of the most promising candidates to extend the high energy frontier of experimental elementary particle physics. A high accelerating gradient for such a collider is desirable to limit its overall length. Accelerating gradient is mainly limited by electrical breakdown, and it has been generally assumed that this limit increases with increasing frequency for normal-conducting accelerating structures. Since the choice of frequency has a profound influence on the design of a linear collider, the frequency dependence of breakdown has been measured using six exactly scaled single-cell cavities at 21, 30, and 39 GHz. The influence of temperature on breakdown behavior was also investigated. The maximum obtainable surface fields were found to be in the range of 300 to 400 MV/m for copper, with no significant dependence on either frequency or temperature.

  13. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  14. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  15. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    OpenAIRE

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar; Cecati, Carlo

    2013-01-01

    Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbala...

  16. Analysis Code for High Gradient Dielectric Insulator Surface Breakdown

    Energy Technology Data Exchange (ETDEWEB)

    Ives, Robert Lawrence [Calabazas Creek Research, Inc.; Verboncoeur, John [University of California - Berkeley; Aldan, Manuel [University of California, Berkeley

    2010-05-30

    High voltage (HV) insulators are critical components in high-energy, accelerator and pulsed power systems that drive diverse applications in the national security, nuclear weapons science, defense and industrial arenas. In these systems, the insulator may separate vacuum/non-vacuum regions or conductors with high electrical field gradients. These insulators will often fail at electric fields over an order of magnitude lower than their intrinsic dielectric strength due to flashover at the dielectric interface. Decades of studies have produced a wealth of information on fundamental processes and mechanisms important for flashover initiation, but only for relatively simple insulator configurations in controlled environments. Accelerator and pulsed power system designers are faced with applying the fundamental knowledge to complex, operational devices with escalating HV requirements. Designers are forced to rely on “best practices” and expensive prototype testing, providing boundaries for successful operation. However, the safety margin is difficult to estimate, and system design must be very conservative for situations where testing is not practicable, or replacement of failed parts is disruptive or expensive. The Phase I program demonstrated the feasibility of developing an advanced code for modeling insulator breakdown. Such a code would be of great interest for a number of applications, including high energy physics, microwave source development, fusion sciences, and other research and industrial applications using high voltage devices.

  17. Heating process in the pre-Breakdown regime of the Quantum Hall Efect : a size dependent effect

    OpenAIRE

    Meziani, Y. M.; Chaubet, C.; Jouault, B; Bonifacie, S.; Raymond, A; Poirier, W; Piquemal, F.

    2003-01-01

    Our study presents experimental measurements of the contact and longitudinal voltage drops in Hall bars, as a function of the current amplitude. We are interested in the heating phenomenon which takes place before the breakdown of the quantum Hall effect, i.e. the pre-breakdown regime. Two types of samples has been investigated, at low temperature (4.2 and 1.5K) and high magnetic field (up to 13 T). The Hall bars have several different widths, and our observations clearly demonstrate that the...

  18. Dynamic range of low-voltage cascode current mirrors

    DEFF Research Database (Denmark)

    Bruun, Erik; Shah, Peter Jivan

    1995-01-01

    Low-voltage cascode current mirrors are reviewed with respect to the design limitations imposed if all transistors in the mirror are required to operate in the saturation region. It is found that both a lower limit and an upper limit exist for the cascode transistor bias voltage. Further, the use...

  19. Thickness-dependent dielectric breakdown and nanopore creation on sub-10-nm-thick SiN membranes in solution

    Science.gov (United States)

    Yanagi, Itaru; Fujisaki, Koji; Hamamura, Hirotaka; Takeda, Ken-ichi

    2017-01-01

    Recently, dielectric breakdown of solid-state membranes in solution has come to be known as a powerful method for fabricating nanopore sensors. This method has enabled a stable fabrication of nanopores down to sub-2 nm in diameter, which can be used to detect the sizes and structures of small molecules. Until now, the behavior of dielectric breakdown for nanopore creation in SiN membranes with thicknesses of less than 10 nm has not been studied, while the thinner nanopore membranes are preferable for nanopore sensors in terms of spatial resolution. In the present study, the thickness dependence of the dielectric breakdown of sub-10-nm-thick SiN membranes in solution was investigated using gradually increased voltage pulses. The increment in leakage current through the membrane at the breakdown was found to become smaller with a decrease in the thickness of the membrane, which resulted in the creation of smaller nanopores. In addition, the electric field for dielectric breakdown drastically decreased when the thickness of the membrane was less than 5 nm. These breakdown behaviors are quite similar to those observed in gate insulators of metal-oxide-semiconductor devices. Finally, stable ionic-current blockades were observed when single-stranded DNA passed through the nanopores created on the membranes with thicknesses of 3-7 nm.

  20. Coordinated Voltage Control of Active Distribution Network

    Directory of Open Access Journals (Sweden)

    Xie Jiang

    2016-01-01

    Full Text Available This paper presents a centralized coordinated voltage control method for active distribution network to solve off-limit problem of voltage after incorporation of distributed generation (DG. The proposed method consists of two parts, it coordinated primal-dual interior point method-based voltage regulation schemes of DG reactive powers and capacitors with centralized on-load tap changer (OLTC controlling method which utilizes system’s maximum and minimum voltages, to improve the qualified rate of voltage and reduce the operation numbers of OLTC. The proposed coordination has considered the cost of capacitors. The method is tested using a radial edited IEEE-33 nodes distribution network which is modelled using MATLAB.

  1. Genetic Algorithm-Based Artificial Neural Network for Voltage Stability Assessment

    OpenAIRE

    Garima Singh; Laxmi Srivastava

    2011-01-01

    With the emerging trend of restructuring in the electric power industry, many transmission lines have been forced to operate at almost their full capacities worldwide. Due to this, more incidents of voltage instability and collapse are being observed throughout the world leading to major system breakdowns. To avoid these undesirable incidents, a fast and accurate estimation of voltage stability margin is required. In this paper, genetic algorithm based back propagation neural network (GABPNN...

  2. Electrical breakdown of an acrylic dielectric elastomer: effects of hemispherical probing electrode’s size and force

    Directory of Open Access Journals (Sweden)

    Bin Chen

    2015-10-01

    Full Text Available Dielectric elastomers are widely investigated as soft electromechanically active polymers (EAPs for actuators, stretch/force sensors, and mechanical energy harvesters to generate electricity. Although the performance of such devices is limited by the dielectric strength of the constitutive material, the electrical breakdown of soft elastomers for electromechanical transduction is still scarcely studied. Here, we describe a custom-made setup to measure electrical breakdown of soft EAPs, and we present data for a widely studied acrylic elastomer (VHB 4905 from 3M. The elastomer was electrically stimulated via a planar and a hemispherical metal electrode. The breakdown was characterized under different conditions to investigate the effects of the radius of curvature and applied force of the hemispherical electrode. With a given radius of curvature, the breakdown field increased by about 50% for a nearly 10-fold increase of the applied mechanical stress, while with a given mechanical stress the breakdown field increased by about 20% for an approximately twofold increase of the radius of curvature. These results indicate that the breakdown field is highly dependent on the boundary conditions, suggesting the need for reporting breakdown data always in close association with the measurement conditions. These findings might help future investigations in elucidating the ultimate breakdown mechanism/s of soft elastomers.

  3. Breakdown of the Dipole Approximation in Strong-Field Ionization

    CERN Document Server

    Ludwig, A; Mayer, B W; Phillips, C R; Gallmann, L; Keller, U

    2014-01-01

    We report the breakdown of the electric dipole approximation in the long-wavelength limit in strong-field ionization with linearly polarized few-cycle mid-infrared laser pulses at intensities on the order of 10$^{13}$ W/cm$^2$. Photoelectron momentum distributions were recorded by velocity map imaging and projected onto the beam propagation axis. We observe an increasing shift of the peak of this projection opposite to the beam propagation direction with increasing laser intensities. From a comparison with semi-classical simulations, we identify the combined action of the magnetic field of the laser pulse and the Coulomb potential as origin of our observations.

  4. Low-Voltage Continuous Electrospinning Patterning.

    Science.gov (United States)

    Li, Xia; Li, Zhaoying; Wang, Liyun; Ma, Guokun; Meng, Fanlong; Pritchard, Robyn H; Gill, Elisabeth L; Liu, Ye; Huang, Yan Yan Shery

    2016-11-30

    Electrospinning is a versatile technique for the construction of microfibrous and nanofibrous structures with considerable potential in applications ranging from textile manufacturing to tissue engineering scaffolds. In the simplest form, electrospinning uses a high voltage of tens of thousands volts to draw out ultrafine polymer fibers over a large distance. However, the high voltage limits the flexible combination of material selection, deposition substrate, and control of patterns. Prior studies show that by performing electrospinning with a well-defined "near-field" condition, the operation voltage can be decreased to the kilovolt range, and further enable more precise patterning of fibril structures on a planar surface. In this work, by using solution dependent "initiators", we demonstrate a further lowering of voltage with an ultralow voltage continuous electrospinning patterning (LEP) technique, which reduces the applied voltage threshold to as low as 50 V, simultaneously permitting direct fiber patterning. The versatility of LEP is shown using a wide range of combination of polymer and solvent systems for thermoplastics and biopolymers. Novel functionalities are also incorporated when a low voltage mode is used in place of a high voltage mode, such as direct printing of living bacteria; the construction of suspended single fibers and membrane networks. The LEP technique reported here should open up new avenues in the patterning of bioelements and free-form nano- to microscale fibrous structures.

  5. A compact, all solid-state LC high voltage generator.

    Science.gov (United States)

    Fan, Xuliang; Liu, Jinliang

    2013-06-01

    LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

  6. Voltage verification unit

    Science.gov (United States)

    Martin, Edward J.

    2008-01-15

    A voltage verification unit and method for determining the absence of potentially dangerous potentials within a power supply enclosure without Mode 2 work is disclosed. With this device and method, a qualified worker, following a relatively simple protocol that involves a function test (hot, cold, hot) of the voltage verification unit before Lock Out/Tag Out and, and once the Lock Out/Tag Out is completed, testing or "trying" by simply reading a display on the voltage verification unit can be accomplished without exposure of the operator to the interior of the voltage supply enclosure. According to a preferred embodiment, the voltage verification unit includes test leads to allow diagnostics with other meters, without the necessity of accessing potentially dangerous bus bars or the like.

  7. Voltage-gated Proton Channels

    Science.gov (United States)

    DeCoursey, Thomas E.

    2014-01-01

    Voltage-gated proton channels, HV1, have vaulted from the realm of the esoteric into the forefront of a central question facing ion channel biophysicists, namely the mechanism by which voltage-dependent gating occurs. This transformation is the result of several factors. Identification of the gene in 2006 revealed that proton channels are homologues of the voltage-sensing domain of most other voltage-gated ion channels. Unique, or at least eccentric, properties of proton channels include dimeric architecture with dual conduction pathways, perfect proton selectivity, a single-channel conductance ~103 smaller than most ion channels, voltage-dependent gating that is strongly modulated by the pH gradient, ΔpH, and potent inhibition by Zn2+ (in many species) but an absence of other potent inhibitors. The recent identification of HV1 in three unicellular marine plankton species has dramatically expanded the phylogenetic family tree. Interest in proton channels in their own right has increased as important physiological roles have been identified in many cells. Proton channels trigger the bioluminescent flash of dinoflagellates, facilitate calcification by coccolithophores, regulate pH-dependent processes in eggs and sperm during fertilization, secrete acid to control the pH of airway fluids, facilitate histamine secretion by basophils, and play a signaling role in facilitating B-cell receptor mediated responses in B lymphocytes. The most elaborate and best-established functions occur in phagocytes, where proton channels optimize the activity of NADPH oxidase, an important producer of reactive oxygen species. Proton efflux mediated by HV1 balances the charge translocated across the membrane by electrons through NADPH oxidase, minimizes changes in cytoplasmic and phagosomal pH, limits osmotic swelling of the phagosome, and provides substrate H+ for the production of H2O2 and HOCl, reactive oxygen species crucial to killing pathogens. PMID:23798303

  8. Electrical breakdown phenomena of dielectric elastomers

    DEFF Research Database (Denmark)

    Yu, Liyun; Mateiu, Ramona Valentina; Skov, Anne Ladegaard

    years. However, optimization with respect to the dielectric permittivity solely may lead to other problematic phenomena such as premature electrical breakdown. In this work, we focus on the chloro propyl functionalized silicone elastomers prepared in Madsen et al[2] and we investigate the electrical...... breakdown patterns of two similar chloro propyl functionalized silicone elastomers which break down electrically in a rather different way as well as we compare them to a silicone based reference. Thermogravimetric analysis (TGA) and scanning electron microscopy (SEM) are used to evaluate the elastomers...... before and after electrical breakdown. It was shown the chemically very similar silicone elastomers broke down electrically in very different ways. These observations emphasize that the modification of the silicone backbone may open up for completely new possibilities for stabilizing the silicone...

  9. Impact of Machine Breakdowns on Productivity

    Directory of Open Access Journals (Sweden)

    Anwaruddin Tanwari

    2011-10-01

    Full Text Available This paper reports the machine breakdowns and their impact on the total productivity for the FMCGs (Fast Moving Consumer Goods industry because higher productivity rate is important factor on which the customer services largely depend in this competitive business world. This paper also suggests that the machine breakdowns and other related problems within the plant are due to improper care, keeping the plant operative for twenty four hours a day, seven days a week without any break and lack of management\\'s concentration towards these issues. These break-downs results in un-timely closure of the plant and very poor production performance is achieved in the plant that affects the service level at great level. Realising the importance of maintenance in improving productivity and service, an attempt has been made in this paper to study the scope of maintenance with the help of a case study.

  10. High-voltage (900 V) 4 H-SiC Schottky diodes with a boron-implanted guard p-n junction

    Energy Technology Data Exchange (ETDEWEB)

    Grekhov, I. V.; Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Il' inskaya, N. D.; Kon' kov, O. I.; Potapov, A. S.; Samsonova, T. P. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

    2008-02-15

    High-voltage (900 V) 4H-SiC Schottky diodes terminated with a guard p-n junction were fabricated and studied. The guard p-n junction was formed by room-temperature boron implantation with subsequent high-temperature annealing. Due to transient enhanced boron diffusion during annealing, the depth of the guard p-n junction was equal to about 1.7 {mu}m, which is larger by approximately 1 {mu}m than the projected range of 11 B ions in 4H-SiC. The maximum reverse voltage of fabricated 4H-SiC Schottky diodes is found to be limited by avalanche breakdown of the planar p-n junction; the value of the breakdown voltage (910 V) is close to theoretical estimate in the case of the impurity concentration N = 2.5 Multiplication-Sign 10{sup 15} cm{sup -3} in the n-type layer, thickness of the n-type layer d = 12.5 {mu}m, and depth of the p-n junction r{sub j} = 1.7 {mu}m. The on-state diode resistance (3.7 m{Omega} cm{sup 2}) is controlled by the resistance of the epitaxial n-type layer. The recovery charge of about 1.3 nC is equal to the charge of majority charge carriers that are swept out of an epitaxial n-type layer under the effect of a reverse voltage.

  11. Spectrometers for RF breakdown studies for CLIC

    Science.gov (United States)

    Jacewicz, M.; Ziemann, V.; Ekelöf, T.; Dubrovskiy, A.; Ruber, R.

    2016-08-01

    An e+e- collider of several TeV energy will be needed for the precision studies of any new physics discovered at the LHC collider at CERN. One promising candidate is CLIC, a linear collider which is based on a two-beam acceleration scheme that efficiently solves the problem of power distribution to the acceleration structures. The phenomenon that currently prevents achieving high accelerating gradients in high energy accelerators such as the CLIC is the electrical breakdown at very high electrical field. The ongoing experimental work within the CLIC collaboration is trying to benchmark the theoretical models focusing on the physics of vacuum breakdown which is responsible for the discharges. In order to validate the feasibility of accelerating structures and observe the characteristics of the vacuum discharges and their eroding effects on the structure two dedicated spectrometers are now commissioned at the high-power test-stands at CERN. First, the so called Flashbox has opened up a possibility for non-invasive studies of the emitted breakdown currents during two-beam acceleration experiments. It gives a unique possibility to measure the energy of electrons and ions in combination with the arrival time spectra and to put that in context with accelerated beam, which is not possible at any of the other existing test-stands. The second instrument, a spectrometer for detection of the dark and breakdown currents, is operated at one of the 12 GHz stand-alone test-stands at CERN. Built for high repetition rate operation it can measure the spatial and energy distributions of the electrons emitted from the acceleration structure during a single RF pulse. Two new analysis tools: discharge impedance tracking and tomographic image reconstruction, applied to the data from the spectrometer make possible for the first time to obtain the location of the breakdown inside the structure both in the transversal and longitudinal direction thus giving a more complete picture of the

  12. Modeling the breakdown and glow phases during ignition of HID lamps

    Energy Technology Data Exchange (ETDEWEB)

    Liland, K.B.; Peres, I.; Pitchford, L.C.; Boeuf, J.P. [Univ. Paul Sabatier, Toulouse (France)

    1996-12-31

    HID lamps are often ignited by one or more short, high voltage pulses (trigger pulses) superimposed on the low frequency, generator voltage. The authors have developed a self-consistent, fluid model of transient glow discharges to study the breakdown and glow phases in HID lamps from the time of the application of the trigger pulse(s) to the time when there is a fully-developed, quasi-steady state glow discharge. The transition to the thermionic arc is not considered here. Using this model they have investigated the influence of the height, width and number of trigger pulses on the generator voltage required to achieve a steady-state glow discharge. The model used is one-dimensional, and the fundamental variables are the charged particle densities and the potential as functions of distance between the electrodes and time. The minimum voltage needed to initiate a glow discharge, V{sub g}, decreases with increasing current during the trigger pulse and reaches a minimum which is a few volts above the steady-state glow voltage. Results in discharges in argon and argon/mercury mixtures will be presented showing the dependence of V{sub g} on the trigger pulse and on other discharge conditions (gas mixture, external circuit, ...). The calculated, steady-state glow current-voltage characteristic will also be presented.

  13. Laser-induced breakdown spectroscopy detection of heavy metal in water based on graphite conch method

    Science.gov (United States)

    Wang, Chunlong; Liu, Jianguo; Zhao, Nanjing; Shi, Huan; Liu, Lituo; Ma, Mingjun; Zhang, Wei; Chen, Dong; Liu, Jing; Zhang, Yujun; Liu, Wenqing

    2012-10-01

    The laser-induced breakdown spectroscopy emission characteristics of trace heavy metal lead in water is studied based on graphite conch method, with a 1064nm wavelength Nd: YAG laser as excitation source, the echelle spectrometer and ICCD detector are used for spectral separation and high sensitive detection with high resolution and wide spectral range. The delay time 900ns and gate time 1600ns are determined in the experiment. The calibration curve of Pb is plotted based on the different concentration measurement results, and a limit of detection of 0.0138mg / L is obtained for Pb in water. Graphite conch method effectively overcomes the current problems on laser-induced breakdown spectroscopy detection of heavy metal in water. The detection limits and stability are improved. The reference data is provided for further study on the fast measurement of trace heavy metals in water by laser induced breakdown spectroscopy technique.

  14. The Resistance of Breakdown in Transformer Oil

    Directory of Open Access Journals (Sweden)

    Jozef Kudelcik

    2008-01-01

    Full Text Available The conditions under which breakdown of composite liquid - solid insulation can be occurred, e.g., in transformer,play an important role in designing of such insulation. The initial state of breakdown development is explained on the basisof bubble theory and formation of a plasma channel between the electrodes. The electrical resistance of plasma channel iscalculated using several theories and its changes from a few ohms to a few hundred milliohms due to Joule heating caused byhigh arc current which flows through the plasma. The dynamics of the arc current depends on the parameters of outer circuitand is represented by RLC circuit.

  15. Water permeation and dielectric breakdown. Water permeability in Pub Tedlar. Pub/Tedlar as a function of temperature and humidity

    Science.gov (United States)

    Orehotsky, J.

    1985-06-01

    Moisture transport and dielectric breakdown of polyvinyl butyral (PVB), Tedlar, and PVB/Tedlar composites were addressed. Data for the temperature range between 20 and 80 C showed that the moisture flux through the composite is governed by the slower material; and that the composite permeability is intermediate to those of the component material, as predicted by theory. Data for Tedlar at 71 C, showing the dependence of moisture flux on relative humidity, was also presented. Dielectric breakdown data were less precise and less conclusive. The generally applied theoretical model does not match the experimental data. The PVB/Tedlar composite exhibited greater voltage breakdown resistance than either component. Testing of EVA and EVA/Tedlar composites is underway.

  16. Electrical Breakdown Physics in Photoconductive Semiconductor Switches (PCSS).

    Energy Technology Data Exchange (ETDEWEB)

    Mar, Alan [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Zutavern, Fred J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Vawter, Gregory A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hjalmarson, Harold P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Gallegos, Richard Joseph [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Bigman, Verle Howard [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2016-01-01

    of 200kV (DC) and 5kA current that can be stacked in parallel to achieve 100's of kA with 10e5 shot lifetime. The new vertical switch design configuration generates parallel filaments in the bulk GaAs (as opposed to just beneath the surface as in previous designs) to achieve breakdown fields close to the maximum for the bulk GaAs while operating in air, and with 2-D scalability of the number of current-sharing filaments. This design also may be highly compatible with 2-D VCSEL arrays for optical triggering. The demonstration of this design in this LDRD utilized standard thickness wafers to trigger 0.4kA at 35kV/cm (limited by 0.6mm wafer thickness), tested to 1e5 shots with no detectable degradation of switch performance. Higher fields, total current, and switching voltages would be achievable with thicker GaAs wafers. Another important application pursued in this LDRD is the use of PCSS for trigger generator applications. Conventional in-plane PCSS have achieved triggering of a 100kV sparkgap (Kinetech-type) switch of the type similar to switches being considered for accelerator upgrades. The trigger is also being developed for pulsed power for HPM applications that require miniaturization and robust performance in noisy compact environments. This has spawned new programs for developing this technology, including an STTR for VCSEL trigger laser integration, also pursuing other follow-on applications.

  17. Preparation and Arc Breakdown Behavior of Nanocrystalline W-Cu Electrical Contact Materials

    Institute of Scientific and Technical Information of China (English)

    Wenge CHEN; Zhanying KANG; Bingjun DING

    2005-01-01

    Nanostructured (NS) W-Cu composite powder was prepared by mechanical alloying (MA), and nanostructured bulk of W-Cu contact material was fabricated by hot pressed sintering in an electrical vacuum furnace. The microstructure,electric conductivity, hardness, breakdown voltage and arcing time of NS W-Cu alloys were measured and compared to conventional W-Cu alloys prepared by powder metallurgy. The results show that microstructural refinement and uniformity can improve the breakdown behavior, the electric arc stability and the arc extinction ability of nanostructured W-Cu contacts materials. Also, the nanostructured W-Cu contact material shows the characteristic of spreading electric arcs, which is of benefit to electric arc erosion.

  18. Impact of gas flow rate on breakdown of filamentary dielectric barrier discharges

    Science.gov (United States)

    Höft, H.; Becker, M. M.; Kettlitz, M.

    2016-03-01

    The influence of gas flow rate on breakdown properties and stability of pulsed dielectric barrier discharges (DBDs) in a single filament arrangement using a gas mixture of 0.1 vol. % O2 in N2 at atmospheric pressure was investigated by means of electrical and optical diagnostics, accompanied by fluid dynamics and electrostatics simulations. A higher flow rate perpendicular to the electrode symmetry axis resulted in an increased breakdown voltage and DBD current maximum, a higher discharge inception jitter, and a larger emission diameter of the discharge channel. In addition, a shift of the filament position for low gas flow rates with respect to the electrode symmetry axis was observed. These effects can be explained by the change of the residence time of charge carriers in the discharge region—i.e., the volume pre-ionization—for changed flow conditions due to the convective transport of particles out of the center of the gap.

  19. The Influence of the Magnetic Field on the Electrical Breakdown Phenomena

    Institute of Scientific and Technical Information of China (English)

    M.RADMILOVI(C)-RADJENOVI(C); B.RADJNOVI(C)

    2007-01-01

    A simple phenomenological model and detailed simulation studies of the breakdown phenomena in argon and nitrogen under the simultaneous action of electric and magnetic fields are presented in this paper. Expressions for the breakdown voltage have been derived taking into account variations of both the ionization coefficient and the secondary electron yield in a magnetic field. Calculations were performed by using XOOPIC code, an Object Oriented Particle in Cell code, with both the original and the improved secondary emission model with inclusion of the influence of the magnetic field on the secondary electron production. The simulation results presented here clearly show that the inclusion of the dependence of the secondary electron yield on the magnetic field leads to better agreement with existing experimental results.

  20. Performance evaluation of self-breakdown-based single-gap plasma cathode electron gun

    Indian Academy of Sciences (India)

    Niraj Kumar; Nalini Pareek; Udit Narayan Pal; Deepak Kumar Verma; Jitendra Prajapati; Mahesh Kumar; Bharat Lal Meena; Ram Prakash

    2014-06-01

    This paper presents the experimental studies on self-breakdown-based single-gap plasma cathode electron (PCE) gun (5–20 kV/50–160 A) in argon, gas atmosphere and its performance evaluation based on particle-in-cell (PIC) simulation code `OOPIC-Pro’.The PCE-Gun works in conducting phase (low energy, high current) of pseudospark discharge. It produces an intense electron beam, which can propagate more than 200 mm in the drift space region without external magnetic field. The profile of this beam in the drift space region at different breakdown conditions (i.e., gas pressures and applied voltages) has been studied and the experimental results are compared with simulated values. It is demonstrated that ∼30% beam current is lost during the propagation possibly due to space charge neutralization and collisions with neutral particles and walls.

  1. Applying the Different Statistical Tests in Analysis of Electrical Breakdown Mechanisms in Nitrogen Filled Gas Diode

    Science.gov (United States)

    Čedomir, A. Maluckov; Saša, A. Rančev; Miodrag, K. Radović

    2016-10-01

    This paper presents the results of our investigations of breakdown mechanisms, as well as a description of their influence on the distributions of time delay distributions, for a gas tube filled with nitrogen at 4 mbar. The values of the time delay are measured for different voltages, and the values of the relaxation times and their distributions and probability plots are analyzed. The obtained density distributions have Gaussian distributions and exponential distributions for different values of relaxation times (Gaussian for small values and exponential for large values of relaxation time). It is shown that for middle values of relaxation time the delay distributions have a shape between Gaussian and exponential distributions, which is a result of the different influences of electrical breakdown.

  2. Strongly nonlinear dynamics of electrolytes in large ac voltages

    DEFF Research Database (Denmark)

    Olesen, Laurits Højgaard; Bazant, Martin Z.; Bruus, Henrik

    2010-01-01

    We study the response of a model microelectrochemical cell to a large ac voltage of frequency comparable to the inverse cell relaxation time. To bring out the basic physics, we consider the simplest possible model of a symmetric binary electrolyte confined between parallel-plate blocking electrodes...... in the electrolyte near the electrodes and, at very large voltage, the breakdown of the quasiequilibrium structure of the double layers. The former leads to the prediction of “ac capacitive desalination” since there is a time-averaged transfer of salt from the bulk to the double layers, via oscillating diffusion...... nonlinear responses to large ac voltages, such as Faradaic reactions, electro-osmotic instabilities, and induced-charge electrokinetic phenomena....

  3. Synthesis Mechanism of Low-Voltage Praseodymium Oxide Doped Zinc Oxide Varistor Ceramics Prepared Through Modified Citrate Gel Coating

    Directory of Open Access Journals (Sweden)

    Wan Rafizah Wan Abdullah

    2012-04-01

    Full Text Available High demands on low-voltage electronics have increased the need for zinc oxide (ZnO varistors with fast response, highly non-linear current-voltage characteristics and energy absorption capabilities at low breakdown voltage. However, trade-off between breakdown voltage and grain size poses a critical bottle-neck in the production of low-voltage varistors. The present study highlights the synthesis mechanism for obtaining praseodymium oxide (Pr6O11 based ZnO varistor ceramics having breakdown voltages of 2.8 to 13.3 V/mm through employment of direct modified citrate gel coating technique. Precursor powder and its ceramics were examined by means of TG/DTG, FTIR, XRD and FESEM analyses. The electrical properties as a function of Pr6O11 addition were analyzed on the basis of I-V characteristic measurement. The breakdown voltage could be adjusted from 0.01 to 0.06 V per grain boundary by controlling the amount of Pr6O11 from 0.2 to 0.8 mol%, without alteration of the grain size. The non-linearity coefficient, α, varied from 3.0 to 3.5 and the barrier height ranged from 0.56 to 0.64 eV. Breakdown voltage and α lowering with increasing Pr6O11 content were associated to reduction in the barrier height caused by variation in O vacancies at grain boundary.

  4. Voltage-dependent gating of hERG potassium channels

    Directory of Open Access Journals (Sweden)

    Yen May eCheng

    2012-05-01

    Full Text Available The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4-S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-a-go-go related gene, hERG, which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure-function relationships underlying voltage-dependent gating in Shaker and hERG channels, with a focus on the roles of the voltage sensing domain and the S4-S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter charge interactions. More recent data suggest that key amino acid differences in the hERG voltage sensing unit and S4-S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor.

  5. Analysis of breakdown on thermal and electrical measurements for SPIDER accelerating grids

    Energy Technology Data Exchange (ETDEWEB)

    Pesce, Alberto, E-mail: alberto.pesce@igi.cnr.it [Consorzio RFX - Associazione EURATOM-ENEA per la fusione, Corso Stati Uniti 4, 35127 Padova (Italy); Pomaro, Nicola [Consorzio RFX - Associazione EURATOM-ENEA per la fusione, Corso Stati Uniti 4, 35127 Padova (Italy)

    2011-10-15

    The PRIMA test facility, under realization in Padova, includes a full size plasma source prototype for ITER, called SPIDER (Source for the Production of Ions of Deuterium Extracted from Radio Frequency plasma). The effects of breakdown in the electrical insulation inside the ion source are analyzed with particular care to the embedded diagnostic system, i.e. the thermal and electrical measurements installed on the grids and ion source case and transferred by multipolar cables to the acquisition system, located inside the 100 kV insulated deck and hosting the ion source power supply, the signal conditioning and the acquisition cubicles. The breakdown affects strongly the measurements, so it has to be mitigated in order to guarantee adequate reliability of the whole measurement set. A parametric study has been carried out on a detailed circuital model for fast transients, implemented using SimPowerSystems{sup TM} tool of Matlab Simulink code. The model includes all the relevant conductors of the subsystems downstream the insulating transformer of the Accelerating Grids Power Supply (AGPS), i.e. the AGPS rectifier, the multipolar transmission line, the 100 kV High Voltage Deck, the ion source power supply and the ion source itself. In particular all the magnetic and capacitive couplings have been computed by a proper 2D fem model. The optimization of the cabling layout, of the wire screening and of the protection devices, like surge arresters and resistors, has been carried out through the accurate modeling of the circuit. The energy dissipated on each ion source surge arrester is estimated and adequate TSD (transient suppression devices) are selected. A peculiar and difficult to satisfy requirement is the high number of surges that the TSD has to withstand. Breakdowns between components polarized at different voltages have been considered, in order to inspect the worst condition during a breakdown.

  6. Induction cell breakdown experiments for the Dual-Axis Radiographic Hydrotest (DARHT) Facility

    Energy Technology Data Exchange (ETDEWEB)

    Earley, L.M.; Barnes, G.A.; Eversole, S.A.; Kauppila, T.J.; Keel, G.; Liska, D.J.; Moir, D.C.; Parsons, W.M.; Rader, D.C.

    1991-01-01

    Linear induction cells for the Dual-Axis Radiographic Hydrotest (DARHT) Facility have been tested to determine their high-voltage breakdown characteristics. A variety of full scale insulators were tested both in actual cells and in fixtures simulating induction cells. All insulators were constructed using cross-linked polystyrene (Rexolite). High-voltage pulses up to 550 kV were applied to the insulators using both a 60-ns pulse Blumlein and a 200-ns pulse cable Marx. Two different vacuum gaps were used in these tests, 1.46 and 1.91 cm. The tests were performed at various vacuum levels ranging from 1 {times} 10{sup {minus}6} to 5 {times} 10{sup {minus}8} torr. Breakdown tests of the insulators were also performed with an electron beam generated in the vacuum gap through the use of a velvet emitter. The gap voltage and current were measured using calibrated E-dot and B-dot probes. 15 refs., 7 figs.

  7. Modeling and analysis of breakdown EMI protection for MITICA insulation and embedded diagnostics

    Energy Technology Data Exchange (ETDEWEB)

    Pesce, A., E-mail: alberto.pesce@igi.cnr.it [Consorzio RFX – Associazione EURATOM-ENEA sulla Fusione, Corso Stati Uniti 4, 35127 Padova (Italy); Pomaro, N.; Zamengo, A.; Bigi, M.; Toigo, V. [Consorzio RFX – Associazione EURATOM-ENEA sulla Fusione, Corso Stati Uniti 4, 35127 Padova (Italy)

    2013-10-15

    Highlights: ► A fast transient model of MITICA electrical system with all relevant conductors has been developed. ► MITICA insulations on Source and main Bushing are at high risk due to electrical breakdowns. ► The introduction of capacitances in some critical points is effective to reduce overvoltages. ► Signal cables must be screened at both ends to and follow the route of reference potential conductors. -- Abstract: On the Padova PRIMA facility the prototype of the ITER HNBs will be tested in the device called MITICA (Megavolt ITER Injector and Concept Advancement). During Beam operation breakdowns will occur across the accelerator grids and Source components causing transient high voltages between parts normally at low voltages, so stressing the electrical insulation of sensor cables, connectors and feedthroughs. The MITICA electrical model implemented to estimate the characteristics of the voltage transients is here described, with particular emphasis on the feedthroughs, on the source insulation and on the embedded diagnostic system. As severe stresses result with the present design mitigating measures are necessary to avoid damage and maintain proper operation. The solution proposed and supported by the analyses to introduce concentrated capacitances in some critical points turns out to be suitable in terms of electrical effects and of technical compatibility with the main requirements of MITICA environment.

  8. High Voltage Distribution

    Science.gov (United States)

    Norbeck, Edwin; Miller, Michael; Onel, Yasar

    2010-11-01

    For detector arrays that require 5 to 10 kV at a few microamps each for hundreds of detectors, using hundreds of HV power supplies is unreasonable. Bundles of hundreds of HV cables take up space that should be filled with detectors. A typical HV module can supply 1 ma, enough current for hundreds of detectors. It is better to use a single HV module and distribute the current as needed. We show a circuit that, for each detector, measures the current, cuts off the voltage if the current exceeds a set maximum, and allows the HV to be turned on or off from a control computer. The entire array requires a single HV cable and 2 or 3 control lines. This design provides the same voltage to all of the detectors, the voltage set by the single HV module. Some additional circuitry would allow a computer controlled voltage drop between the HV and each individual detector.

  9. Cavitation as a Precursor to Breakdown of Mass-Impregnated HVDC Cables

    Energy Technology Data Exchange (ETDEWEB)

    Evenset, Gunnar

    1999-09-01

    Thermal cycling has proven to be a critical test for mass-impregnated HVDC cables. The dielectric strength of the insulation is significantly reduced during the first part of the cooling. This decrease of the dielectric strength limits the development of mass-impregnated cables for higher operating voltages and higher power transfer capacities. The decrease of the dielectric strength during cooling has been assumed to be caused by formation of cavities in the mass because the thermal contraction of the mass is larger than that of the paper. Cavities have previously been observed in thermally cycled cables, but their actual formation and growth have not been studied. The fact that breakdown usually occurs a few hours into the cooling period indicates that the dynamics of the growth is important. This work studies the dynamic phenomena occurring in mass-impregnated cables during thermal cycling. In experiments on a system of mass and insulating paper, cavities were observed near the paper surface, probably caused by heterogeneous nucleation. Knowing the tensile stress at cavity formation is important because it controls the size of the cavities and the distance between independently formed cavities in a cable insulation. A test cell was designed to investigate cavitation in models of lapped insulation. The formation, growth and collapse of the cavities could be visually observed while the insulation was electrically stressed and partial discharges were measured. The first cavity generally formed in one of the butt gaps and grew both along the butt gap and into the mass layers between the papers towards adjacent butt gaps. When the cavity between the papers grew into an adjacent butt gap, the gas/vapour filled channel connecting the butt gaps was closed. In this way, one cavity grew into several butt gaps. The extent of cavities between the papers was observed to depend on the interfacial pressure. Considerable less tension is required to suck the menisci of a cavity

  10. Numerical Borehole Breakdown Investigations using XFEM

    Science.gov (United States)

    Beckhuis, Sven; Leonhart, Dirk; Meschke, Günther

    2016-04-01

    During pressurization of a wellbore a typical downhole pressure record shows the following regimes: first the applied wellbore pressure balances the reservoir pressure, then after the compressive circumferential hole stresses are overcome, tensile stresses are induced on the inside surface of the hole. When the magnitude of these stresses reach the tensile failure stress of the surrounding rock medium, a fracture is initiated and propagates into the reservoir. [1] In standard theories this pressure, the so called breakdown pressure, is the peak pressure in the down-hole pressure record. However experimental investigations [2] show that the breakdown did not occur even if a fracture was initiated at the borehole wall. Drilling muds had the tendency to seal and stabilize fractures and prevent fracture propagation. Also fracture mechanics analysis of breakdown process in mini-frac or leak off tests [3] show that the breakdown pressure could be either equal or larger than the fracture initiation pressure. In order to gain a deeper understanding of the breakdown process in reservoir rock, numerical investigations using the extended finite element method (XFEM) for hydraulic fracturing of porous materials [4] are discussed. The reservoir rock is assumed to be pre-fractured. During pressurization of the borehole, the injection pressure, the pressure distribution and the position of the highest flux along the fracture for different fracturing fluid viscosities are recorded and the influence of the aforementioned values on the stability of fracture propagation is discussed. [1] YEW, C. H. (1997), "Mechanics of Hydraulic Fracturing", Gulf Publishing Company [2] MORITA, N.; BLACK, A. D.; FUH, G.-F. (1996), "Borehole Breakdown Pressure with Drilling Fluids". International Journal of Rock Mechanics and Mining Sciences 33, pp. 39-51 [3] DETOURNAY, E.; CARBONELL, R. (1996), "Fracture Mechanics Analysis of the Breakdown Process in Minifrac or Leakoff Test", Society of Petroleum

  11. A High-Voltage SOI CMOS Exciter Chip for a Programmable Fluidic Processor System.

    Science.gov (United States)

    Current, K W; Yuk, K; McConaghy, C; Gascoyne, P R C; Schwartz, J A; Vykoukal, J V; Andrews, C

    2007-06-01

    A high-voltage (HV) integrated circuit has been demonstrated to transport fluidic droplet samples on programmable paths across the array of driving electrodes on its hydrophobically coated surface. This exciter chip is the engine for dielectrophoresis (DEP)-based micro-fluidic lab-on-a-chip systems, creating field excitations that inject and move fluidic droplets onto and about the manipulation surface. The architecture of this chip is expandable to arrays of N X N identical HV electrode driver circuits and electrodes. The exciter chip is programmable in several senses. The routes of multiple droplets may be set arbitrarily within the bounds of the electrode array. The electrode excitation waveform voltage amplitude, phase, and frequency may be adjusted based on the system configuration and the signal required to manipulate a particular fluid droplet composition. The voltage amplitude of the electrode excitation waveform can be set from the minimum logic level up to the maximum limit of the breakdown voltage of the fabrication technology. The frequency of the electrode excitation waveform can also be set independently of its voltage, up to a maximum depending upon the type of droplets that must be driven. The exciter chip can be coated and its oxide surface used as the droplet manipulation surface or it can be used with a top-mounted, enclosed fluidic chamber consisting of a variety of materials. The HV capability of the exciter chip allows the generated DEP forces to penetrate into the enclosed chamber region and an adjustable voltage amplitude can accommodate a variety of chamber floor thicknesses. This demonstration exciter chip has a 32 x 32 array of nominally 100 V electrode drivers that are individually programmable at each time point in the procedure to either of two phases: 0deg and 180deg with respect to the reference clock. For this demonstration chip, while operating the electrodes with a 100-V peak-to-peak periodic waveform, the maximum HV electrode

  12. Modeling for Formation of Conducting Path in Cu/SiO2/Pt Memory Devices: Based on Soft Breakdown Mechanism

    Science.gov (United States)

    Luo, J. M.

    2013-09-01

    The forming process before resistive switching in Cu/ SiO2/Pt memory devices, corresponding to the formation of conducting path, can be regarded as the dielectric soft breakdown. Based on the analysis of breakdown mechanism, a dynamic model combining the transition of Cu ions with the space-charge effect has been proposed, and demonstrates that the forming voltage depends on the thickness of oxide, the sweep rate of voltage and temperature. The predictions of the model are consistent with the experiment data reported in the literature and it is believed that the transition of Cu ions across the oxide and the accumulation of Cu ions at the SiO2/Pt interface could be responsible for the conductive path formation in Cu/SiO2/Pt memory devices.

  13. Low-voltage gyrotrons

    Science.gov (United States)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-03-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5-10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%-2% in the submillimeter wavelength region).

  14. Electrical breakdown of carbon nanotube devices and the predictability of breakdown position

    Directory of Open Access Journals (Sweden)

    Gopal Krishna Goswami

    2012-06-01

    Full Text Available We have investigated electrical transport properties of long (>10 μm multiwalled carbon nanotubes (NTs by dividing individuals into several segments of identical length. Each segment has different resistance because of the random distribution of defect density in an NT and is corroborated by Raman studies. Higher is the resistance, lower is the current required to break the segments indicating that breakdown occurs at the highly resistive segment/site and not necessarily at the middle. This is consistent with the one-dimensional thermal transport model. We have demonstrated the healing of defects by annealing at moderate temperatures or by current annealing. To strengthen our mechanism, we have carried out electrical breakdown of nitrogen doped NTs (NNTs with diameter variation from one end to the other. It reveals that the electrical breakdown occurs selectively at the narrower diameter region. Overall, we believe that our results will help to predict the breakdown position of both semiconducting and metallic NTs.

  15. Quantum-Limited Spectroscopy

    CERN Document Server

    Truong, Gar-Wing; May, Eric F; Stace, Thomas M; Luiten, Andre N

    2015-01-01

    Spectroscopy has an illustrious history delivering serendipitous discoveries and providing a stringent testbed for new physical predictions, including applications from trace materials detection, to understanding the atmospheres of stars and planets, and even constraining cosmological models. Reaching fundamental-noise limits permits optimal extraction of spectroscopic information from an absorption measurement. Here we demonstrate a quantum-limited spectrometer that delivers high-precision measurements of the absorption lineshape. These measurements yield a ten-fold improvement in the accuracy of the excited-state (6P$_{1/2}$) hyperfine splitting in Cs, and reveals a breakdown in the well-known Voigt spectral profile. We develop a theoretical model that accounts for this breakdown, explaining the observations to within the shot-noise limit. Our model enables us to infer the thermal velocity-dispersion of the Cs vapour with an uncertainty of 35ppm within an hour. This allows us to determine a value for Boltzm...

  16. Comparison of laser induced breakdown spectroscopy and spark induced breakdown spectroscopy for determination of mercury in soils

    Energy Technology Data Exchange (ETDEWEB)

    Srungaram, Pavan K.; Ayyalasomayajula, Krishna K.; Yu-Yueh, Fang; Singh, Jagdish P., E-mail: singh@icet.msstate.edu

    2013-09-01

    Mercury is a toxic element found throughout the environment. Elevated concentrations of mercury in soils are quite hazardous to plants growing in these soils and also the runoff of soils to nearby water bodies contaminates the water, endangering the flora and fauna of that region. This makes continuous monitoring of mercury very essential. This work compares two potential spectroscopic methods (laser induced breakdown spectroscopy (LIBS) and spark induced breakdown spectroscopy (SIBS)) at their optimum experimental conditions for mercury monitoring. For LIBS, pellets were prepared from soil samples of known concentration for generating a calibration curve while for SIBS, soil samples of known concentration were used in the powder form. The limits of detection (LODs) of Hg in soil were calculated from the Hg calibration curves. The LOD for mercury in soil calculated using LIBS and SIBS is 483 ppm and 20 ppm, respectively. The detection range for LIBS and SIBS is discussed. - Highlights: • We compared SIBS and LIBS for mercury (Hg) measurements in soil. • Hg 546.07 nm line was selected for both LIBS and SIBS measurements. • Limit of detection for Hg was found to be 20 ppm with SIBS and 483 ppm with LIBS.

  17. Wind Power Plant Voltage Stability Evaluation: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Muljadi, E.; Zhang, Y. C.

    2014-09-01

    Voltage stability refers to the ability of a power system to maintain steady voltages at all buses in the system after being subjected to a disturbance from a given initial operating condition. Voltage stability depends on a power system's ability to maintain and/or restore equilibrium between load demand and supply. Instability that may result occurs in the form of a progressive fall or rise of voltages of some buses. Possible outcomes of voltage instability are the loss of load in an area or tripped transmission lines and other elements by their protective systems, which may lead to cascading outages. The loss of synchronism of some generators may result from these outages or from operating conditions that violate a synchronous generator's field current limit, or in the case of variable speed wind turbine generator, the current limits of power switches. This paper investigates the impact of wind power plants on power system voltage stability by using synchrophasor measurements.

  18. Amplitude-temporal characteristics of a supershort avalanche electron beam generated during subnanosecond breakdown in air and nitrogen

    Science.gov (United States)

    Tarasenko, V. F.; Baksht, E. Kh.; Beloplotov, D. V.; Burachenko, A. G.; Lomaev, M. I.

    2016-04-01

    The amplitude-temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude-temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.

  19. Device for monitoring cell voltage

    Science.gov (United States)

    Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  20. Voltage and frequency control in the Islanded portion of the CIGRE Low Voltage distribution network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak, Claus Leth; Buriro, Ehsan Ali

    2017-01-01

    imbalance in the islanded MG. The voltage and the frequency of the islanded MG can be restored to the permissible limits if the desired/exceeded amount of active and reactive power is injected/absorbed by the locally available sources in islanded MG. This paper proposes the control strategy which can...... by providing some ancillary services. The main focus of this paper is about the development of a control system for the islanded MG, the selection of Voltage-Frequency controller for the most suitable DG unit of the Low Voltage test network and the control of voltage and frequency in islanding condition. Under...... compensate the problems of the voltage and the frequency deviations in the islanded MG. The selection of the VF controller for the most suitable DG unit of the LV test network is also presented in this paper and effectiveness of the controllers is verified by presenting simulation results...

  1. High voltage pulse generator

    Science.gov (United States)

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  2. Volume Diffuse Dielectric Barrier Discharge Plasma Produced by Nanosecond High Voltage Pulse in Airflow

    Institute of Scientific and Technical Information of China (English)

    QI Haicheng; GAO Wei; FAN Zhihui; LIU Yidi; REN Chunsheng

    2016-01-01

    Volume diffuse dielectric barrier discharge (DBD) plasma is produced in subsonic airflow by nanosecond high-voltage pulse power supply with a plate-to-plate discharge cell at 6 mm air gap length.The discharge images,optical emission spectra (OES),the applied voltage and current waveforms of the discharge at the changed airflow rates are obtained.When airflow rate is increased,the transition of the discharge mode and the variations of discharge intensity,breakdown characteristics and the temperature of the discharge plasma are investigated.The results show that the discharge becomes more diffuse,discharge intensity is decreased accompanied by the increased breakdown voltage and time lag,and the temperature of the discharge plasma reduces when airflow of small vclocity is introduced into the discharge gap.These phenomena are because that the airflow changes the spatial distribution of the heat and the space charge in the discharge gap.

  3. Volume Diffuse Dielectric Barrier Discharge Plasma Produced by Nanosecond High Voltage Pulse in Airflow

    Science.gov (United States)

    Qi, Haicheng; Gao, Wei; Fan, Zhihui; Liu, Yidi; Ren, Chunsheng

    2016-05-01

    Volume diffuse dielectric barrier discharge (DBD) plasma is produced in subsonic airflow by nanosecond high-voltage pulse power supply with a plate-to-plate discharge cell at 6 mm air gap length. The discharge images, optical emission spectra (OES), the applied voltage and current waveforms of the discharge at the changed airflow rates are obtained. When airflow rate is increased, the transition of the discharge mode and the variations of discharge intensity, breakdown characteristics and the temperature of the discharge plasma are investigated. The results show that the discharge becomes more diffuse, discharge intensity is decreased accompanied by the increased breakdown voltage and time lag, and the temperature of the discharge plasma reduces when airflow of small velocity is introduced into the discharge gap. These phenomena are because that the airflow changes the spatial distribution of the heat and the space charge in the discharge gap. supported by National Natural Science Foundation of China (No. 51437002)

  4. Current limiters

    Energy Technology Data Exchange (ETDEWEB)

    Loescher, D.H. [Sandia National Labs., Albuquerque, NM (United States). Systems Surety Assessment Dept.; Noren, K. [Univ. of Idaho, Moscow, ID (United States). Dept. of Electrical Engineering

    1996-09-01

    The current that flows between the electrical test equipment and the nuclear explosive must be limited to safe levels during electrical tests conducted on nuclear explosives at the DOE Pantex facility. The safest way to limit the current is to use batteries that can provide only acceptably low current into a short circuit; unfortunately this is not always possible. When it is not possible, current limiters, along with other design features, are used to limit the current. Three types of current limiters, the fuse blower, the resistor limiter, and the MOSFET-pass-transistor limiters, are used extensively in Pantex test equipment. Detailed failure mode and effects analyses were conducted on these limiters. Two other types of limiters were also analyzed. It was found that there is no best type of limiter that should be used in all applications. The fuse blower has advantages when many circuits must be monitored, a low insertion voltage drop is important, and size and weight must be kept low. However, this limiter has many failure modes that can lead to the loss of over current protection. The resistor limiter is simple and inexpensive, but is normally usable only on circuits for which the nominal current is less than a few tens of milliamperes. The MOSFET limiter can be used on high current circuits, but it has a number of single point failure modes that can lead to a loss of protective action. Because bad component placement or poor wire routing can defeat any limiter, placement and routing must be designed carefully and documented thoroughly.

  5. Piezoelectric transformers for low-voltage generation of gas discharges and ionic winds in atmospheric air

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Michael J. [Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States); Go, David B., E-mail: dgo@nd.edu [Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States); Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States)

    2015-12-28

    To generate a gas discharge (plasma) in atmospheric air requires an electric field that exceeds the breakdown threshold of ∼30 kV/cm. Because of safety, size, or cost constraints, the large applied voltages required to generate such fields are often prohibitive for portable applications. In this work, piezoelectric transformers are used to amplify a low input applied voltage (<30 V) to generate breakdown in air without the need for conventional high-voltage electrical equipment. Piezoelectric transformers (PTs) use their inherent electromechanical resonance to produce a voltage amplification, such that the surface of the piezoelectric exhibits a large surface voltage that can generate corona-like discharges on its corners or on adjacent electrodes. In the proper configuration, these discharges can be used to generate a bulk air flow called an ionic wind. In this work, PT-driven discharges are characterized by measuring the discharge current and the velocity of the induced ionic wind with ionic winds generated using input voltages as low as 7 V. The characteristics of the discharge change as the input voltage increases; this modifies the resonance of the system and subsequent required operating parameters.

  6. Thermal poling of alkaline earth boroaluminosilicate glasses with intrinsically high dielectric breakdown strength

    Science.gov (United States)

    Smith, Nicholas J.; Lanagan, Michael T.; Pantano, Carlo G.

    2012-04-01

    Per the rectification model of thermal poling, it has been proposed that intrinsic breakdown strength plays a strong limiting role in the internal DC fields supported by the glass from the poling process. One might therefore hypothesize proportionately larger second-order nonlinearity (SON) in glasses with intrinsically high dielectric breakdown strength. We test these ideas by thermal poling of two different commercial alkali-free alkaline-earth boroaluminosilicate display glasses—one with barium only (AF45 from Schott), and the other with a mixture of alkaline-earth ions (OA-10 G from NEG). Not only are such compositions relevant from a commercial standpoint, they are also interesting in that they have been recently shown to exhibit remarkably high intrinsic dielectric breakdown strengths of 11-14 MV/cm. Quantitative Maker fringe and stack Maker-fringe measurements provide an accurate evaluation of the poling-induced SON susceptibilities, and indicate maximum χ(2) values of 0.44 and 0.26 pm/V in these glasses. These values are comparable to those reported for silica and other multicomponent glasses. Thus, the hypothesis that higher χ(2) would be observed in high intrinsic breakdown strength glasses was not validated. Based on our application of the rectification model, internal fields of the order 2-4 MV/cm were calculated, which are well below the measured intrinsic breakdown strengths at room temperature. The most plausible explanation for these observations is nonlinear electronic conduction effects taking place within the depletion region at the poling temperature, limiting internal fields to a fraction of the breakdown field.

  7. On the measurement of laser-induced plasma breakdown thresholds

    Energy Technology Data Exchange (ETDEWEB)

    Brieschenk, Stefan [Centre for Hypersonics, The University of Queensland, Brisbane 4072 (Australia); Kleine, Harald; O' Byrne, Sean [The University of New South Wales Canberra, The Australian Defence Force Academy, Canberra 2600 (Australia)

    2013-09-07

    The breakdown threshold of a gas exposed to intense laser-radiation is a function of gas and laser properties. Breakdown thresholds reported in the literature often vary greatly and these differences can partially be traced back to the method that is typically used to determine breakdown thresholds. This paper discusses the traditional method used to determine breakdown thresholds and the potential errors that can arise using this approach, and presents an alternative method which can yield more accurate data especially when determining breakdown thresholds as functions of gas pressure.

  8. High Voltage GaN Schottky Rectifiers

    Energy Technology Data Exchange (ETDEWEB)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  9. Initiation stage of nanosecond breakdown in liquid

    Science.gov (United States)

    Pekker, Mikhail; Seepersad, Yohan; Shneider, Mikhail N.; Fridman, Alexander; Dobrynin, Danil

    2014-01-01

    In this paper, based on a theoretical model (Shneider and Pekker 2013 Phys. Rev. E 87 043004), it has been shown experimentally that the initial stage of development of a nanosecond breakdown in liquids is associated with the appearance of discontinuities in the liquid (cavitation) under the influence of electrostriction forces. Comparison of experimentally measured area dimensions and its temporal development were found to be in a good agreement with the theoretical calculations. This work is a continuation of the experimental and theoretical works (Dobrynin et al 2013 J. Phys. D: Appl. Phys. 46 105201, Starikovskiy 2013 Plasma Sources Sci. Technol. 22 012001, Seepersad et al 2013 J. Phys. D: Appl. Phys. 46 162001, Marinov et al 2013 Plasma Sources Sci. Technol. 22 042001, Seepersad et al 2013 J. Phys. D: Appl. Phys. 46 3555201), initiated by the work in (Shneider et al 2012 IEEE Trans. Dielectr. Electr. Insul. 19 1597-82), in which the electrostriction mechanism of breakdown was proposed.

  10. Laser induced breakdown spectroscopy on meteorites

    Energy Technology Data Exchange (ETDEWEB)

    De Giacomo, A. [Department of Chemistry, University of Bari (Italy); MIP-CNR sec Bari (Italy)], E-mail: alessandro.degiacomo@ba.imip.cnr.it; Dell' Aglio, M.; De Pascale, O. [MIP-CNR sec Bari (Italy); Longo, S.; Capitelli, M. [Department of Chemistry, University of Bari (Italy); MIP-CNR sec Bari (Italy)

    2007-12-15

    The classification of meteorites when geological analysis is unfeasible is generally made by the spectral line emission ratio of some characteristic elements. Indeed when a meteorite impacts Earth's atmosphere, hot plasma is generated, as a consequence of the braking effect of air, with the consequent ablation of the falling body. Usually, by the plasma emission spectrum, the meteorite composition is determined, assuming the Boltzmann equilibrium. The plasma generated during Laser Induced Breakdown Spectroscopy (LIBS) experiment shows similar characteristics and allows one to verify the mentioned method with higher accuracy. On the other hand the study of Laser Induced Breakdown Spectroscopy on meteorite can be useful for both improving meteorite classification methods and developing on-flight techniques for asteroid investigation. In this paper certified meteorites belonging to different typologies have been investigated by LIBS: Dofhar 461 (lunar meteorite), Chondrite L6 (stony meteorite), Dofhar 019 (Mars meteorite) and Sikhote Alin (irony meteorite)

  11. Breakdown and partial discharges in magnetic liquids

    Science.gov (United States)

    Herchl, F.; Marton, K.; Tomčo, L.; Kopčanský, P.; Timko, M.; Koneracká, M.; Kolcunová, I.

    2008-05-01

    The dielectric properties (permittivity, loss factor, dielectric breakdown strength) of magnetic liquids were investigated. The magnetic liquids were composed of magnetite particles coated with oleic acid as surfactant and dispersed in transformer oil. To determine their dielectric properties they were subjected to a uniform magnetic field at high alternating electric fields up to 14 MV m-1. Nearly constant permittivity of magnetic liquid with particle volume concentration Φ = 0.0019 as a function of electric field was observed. Magnetic liquids with concentrations Φ = 0.019 and 0.032 showed significant changes of permittivity and loss factor dependent on electric and magnetic fields. The best concentration of magnetic fluid was found at which partial current impulse magnitudes were the lowest. The breakdown strength distribution of the magnetic liquid with Φ = 0.0025 was fitted with the Duxbury-Leath, Weibull and Gauss distribution functions.

  12. Project management strategies for prototyping breakdowns

    DEFF Research Database (Denmark)

    Granlien, Maren Sander; Pries-Heje, Jan; Baskerville, Richard

    2009-01-01

    , managing the explorative and iterative aspects of prototyping projects is not a trivial task. We examine the managerial challenges in a small scale prototyping project in the Danish healthcare sector where a prototype breakdown and project escalation occurs. From this study we derive a framework...... of strategies for coping with escalation in troubled prototyping projects; the framework is based on project management triangle theory and is useful when considering how to manage prototype breakdown and escalation. All strategies were applied in the project case at different points in time. The strategies led......Prototyping is often presented as a universal solution to many intractable information systems project problems. Prototyping is known to offer at least three advantages (1) provide users with a concrete understanding, (2) eliminate the confusion, (3) cope with uncertainty. On the other hand...

  13. Fast restoration of large area breakdown for power distribution systems

    Institute of Scientific and Technical Information of China (English)

    LIU Jian; XU Jing-qiu; CHENG Hong-li

    2006-01-01

    An adjacent table-based simplified model of distribution networks containing medium voltage buses of a substation is established.Identification of bus outage and the condition to start fast restoration procedure are discussed.A complex load shading parameter is set up to describe various load shading schemes.The imaginary part of the load shading parameter describes the states of switches of load shading schemes while the real part is the corresponding amount of shaded load.A new concept of independent tripping operation is also put forward.The procedure to search the operation with the least amount of shaded load for a feeder and a connected domain are detailed.The procedure for fast restoration of a large area breakdown of the whole distribution network under emergency states is dealt with using a typical grid distribution network as an example.Results of analysis show that the direct load shading scheme under the most balanced topology is not always the optimal scheme.The proposed method can obtain the optimal operating mode with the least amount of shaded load thus showing its feasibility.

  14. Voltage Regulators for Photovoltaic Systems

    Science.gov (United States)

    Delombard, R.

    1986-01-01

    Two simple circuits developed to provide voltage regulation for highvoltage (i.e., is greater than 75 volts) and low-voltage (i.e., is less than 36 volts) photovoltaic/battery power systems. Use of these circuits results in voltage regulator small, low-cost, and reliable, with very low power dissipation. Simple oscillator circuit controls photovoltaic-array current to regulate system voltage and control battery charging. Circuit senses battery (and system) voltage and adjusts array current to keep battery voltage from exceeding maximum voltage.

  15. Initiation stage of nanosecond breakdown in liquid

    CERN Document Server

    Pekker, Mikhail; Shneider, Mikhail; Fridman, Alexander; Dobrynin, Danil

    2013-01-01

    In this paper, based on a theoretical model [1], it has been shown experimentally that the initial stage of development of a nanosecond breakdown in liquids is associated with the appearance of discontinuities in the liquid (cavitation) under the influence of electrostriction forces. Comparison of experimentally measured area dimensions and its temporal development were found to be in a good agreement with the theoretical calculations.

  16. Studying Voltage Transformer Ferroresonance

    Directory of Open Access Journals (Sweden)

    Hamid Radmanesh

    2012-09-01

    Full Text Available This study studies the effect of Circuit Breaker Shunt Resistance (CBSR, Metal Oxide Vaistor (MOV and Neutral earth Resistance (NR on the control of ferroresonance in the voltage transformer. It is expected that NR can controlled ferroresonance better than MOV and CBSR. Study has been done on a one phase voltage transformer rated 100 VA, 275 kV. The simulation results reveal that considering the CBSR and MOV exhibits a great mitigating effect on ferroresonance overvoltages, but these resistances cannot control these phenomena for all range of parameters. By applying NR to the system structure, ferroresonance has been controlled and its amplitude has been damped for all parameters values.

  17. Numerical modeling of post current-zero dielectric breakdown in a low voltage circuit breaker

    Science.gov (United States)

    Thenkarai Narayanan, Venkat raman

    Oral delivery of macromolecular therapeutics has remained a challenge. Various factors govern principles of oral absorption, including solubility, tissue permeability, stability and dynamics of the gastrointestinal environment. Developing a macromolecular drug carrier for poorly bioavailable drugs is highly desirable. Dendritic polymers are attractive drug delivery vehicles because of their multifunctional surface groups, globular conformation, branched architecture, low poly dispersity and hydrophilic nature. They also offer traditional benefits of macromolecular systems such as extended plasma residence time and reduced systemic toxicity. Developing a poly(amido amine) (PAMAM) dendrimer-based oral drug delivery vehicle is the long-term goal of this research. PAMAM dendrimers can offer advantages in terms of improving solubility and permeability that can ultimately enhance oral absorption of poorly bioavailable drugs. In this dissertation, first the safety and maximum tolerated dose of six different PAMAM dendrimers was studied after oral and systemic administration. Surface charge of these dendrimers significantly influenced their toxicity profile in vivo with cationic systems proving to be more toxic than anionic systems. The inherent permeability of native anionic dendrimers was then evaluated in a mouse model to assess their potential in oral drug delivery. Results suggested that anionic G6.5 dendrimers exhibited appreciable bioavailability with partial degradation observed under in vivo conditions. Subsequently, camptothecin, a model drug used for the treatment of colorectal carcinoma, was attached to PAMAM dendrimers. Antitumor activity revealed that these conjugates were effective in inhibiting growth of cancer cells in vitro. Preliminary efficacy studies conducted in xenograft tumor models also indicated that dendrimer-drug conjugates have potential for oral chemotherapy. Further detailed in vivo studies are needed to demonstrate the utility of PAMAM-drug conjugates for effective and safe delivery of chemotherapeutics by the oral route.

  18. New Breakdown Electric Field Calculation for SF6 High Voltage Circuit Breaker Applications

    Institute of Scientific and Technical Information of China (English)

    Ph.ROBIN-JOUAN; M.YOUSFI

    2007-01-01

    The critical electric fields of hot SF6 are calculated including both electron and ion kinetics in wide ranges of temperature and pressure,namely from 300 K up to 4000 K and 2 atmospheres up to 32 atmospheres respectively.Based on solving a multi-term electron Boltzmann equation the calculations use improved electron-gas collision cross sections for twelve SF6 dissociation products with a particular emphasis on the electron-vibrating molecule interactions.The ion kinetics is also considered and its role on the critical field becomes non negligible as the temperature is above 2000 K.These critical fields are then used in hydrodynamics simulations which correctly predict the circuit breaker behaviours observed in the case of breaking tests.

  19. Breakdown localization in the fixed gap system

    CERN Document Server

    Rajamaki, Robin; Wuensch, Walter

    2014-01-01

    Accurate localization of breakdowns in vacuum could help shed light on breakdown related processes that are not yet fully understood. At the DC spark lab at CERN, an instrument called the Fixed Gap System (FGS) has been developed partially for this purpose. Among other things, the FGS has four built-in antennas, which are intended for breakdown localization. The capability of this aspect of the FGS was explored in this report. Specifically, the feasibility of using a method similar to that which is used in cavity Beam Position Monitors (BPMs) was investigated. The usable frequency range of the current experimental setup was also studied. Firstly, a modal analysis of the inner geometry of the FGS was done in HFSS. This showed that the two first modes to be expected in the spark gap quite differ from those of the ideal pillbox – both in field pattern and in frequency ( 4 and 6 GHz vs. 0.2 and 3 GHz). Secondly, S-parameters of the system were measured. These showed that the coupling between antennas is weak...

  20. Runaway breakdown and electrical discharges in thunderstorms

    Science.gov (United States)

    Milikh, Gennady; Roussel-Dupré, Robert

    2010-12-01

    This review considers the precise role played by runaway breakdown (RB) in the initiation and development of lightning discharges. RB remains a fundamental research topic under intense investigation. The question of how lightning is initiated and subsequently evolves in the thunderstorm environment rests in part on a fundamental understanding of RB and cosmic rays and the potential coupling to thermal runaway (as a seed to RB) and conventional breakdown (as a source of thermal runaways). In this paper, we describe the basic mechanism of RB and the conditions required to initiate an observable avalanche. Feedback processes that fundamentally enhance RB are discussed, as are both conventional breakdown and thermal runaway. Observations that provide clear evidence for the presence of energetic particles in thunderstorms/lightning include γ-ray and X-ray flux intensifications over thunderstorms, γ-ray and X-ray bursts in conjunction with stepped leaders, terrestrial γ-ray flashes, and neutron production by lightning. Intense radio impulses termed narrow bipolar pulses (or NBPs) provide indirect evidence for RB particularly when measured in association with cosmic ray showers. Our present understanding of these phenomena and their enduring enigmatic character are touched upon briefly.

  1. Dielectric breakdown induced by picosecond laser pulses

    Science.gov (United States)

    Smith, W. L.; Bechtel, J. H.; Bloembergen, N.

    1976-01-01

    The damage thresholds of transparent optical materials were investigated. Single picosecond pulses at 1.06 microns, 0.53 microns and 0.35 microns were obtained from a mode locked Nd-YAG oscillator-amplifier-frequency multiplier system. The pulses were Gaussian in space and time and permitted the determination of breakdown thresholds with a reproducibility of 15%. It was shown that the breakdown thresholds are characteristic of the bulk material, which included nine alkali halides, five different laser host materials, KDP, quartz, sapphire and calcium fluoride. The extension of the damage data to the ultraviolet is significant, because some indication was obtained that two- and three-photon absorption processes begin to play a role in determining the threshold. Throughout the visible region of the spectrum the threshold is still an increasing function of frequency, indicating that avalanche ionization is the dominant factor in determining the breakdown threshold. This was confirmed by a detailed study of the damage morphology with a high resolution microscope just above the threshold. The influence of self focusing is discussed, and evidence for beam distortion below the power threshold for complete self focusing is presented, confirming the theory of Marburger.

  2. Kinetic Simulations of Dense Plasma Focus Breakdown

    Science.gov (United States)

    Schmidt, A.; Higginson, D. P.; Jiang, S.; Link, A.; Povilus, A.; Sears, J.; Bennett, N.; Rose, D. V.; Welch, D. R.

    2015-11-01

    A dense plasma focus (DPF) device is a type of plasma gun that drives current through a set of coaxial electrodes to assemble gas inside the device and then implode that gas on axis to form a Z-pinch. This implosion drives hydrodynamic and kinetic instabilities that generate strong electric fields, which produces a short intense pulse of x-rays, high-energy (>100 keV) electrons and ions, and (in deuterium gas) neutrons. A strong factor in pinch performance is the initial breakdown and ionization of the gas along the insulator surface separating the two electrodes. The smoothness and isotropy of this ionized sheath are imprinted on the current sheath that travels along the electrodes, thus making it an important portion of the DPF to both understand and optimize. Here we use kinetic simulations in the Particle-in-cell code LSP to model the breakdown. Simulations are initiated with neutral gas and the breakdown modeled self-consistently as driven by a charged capacitor system. We also investigate novel geometries for the insulator and electrodes to attempt to control the electric field profile. The initial ionization fraction of gas is explored computationally to gauge possible advantages of pre-ionization which could be created experimentally via lasers or a glow-discharge. Prepared by LLNL under Contract DE-AC52-07NA27344.

  3. Voltage stability, bifurcation parameters and continuation methods

    Energy Technology Data Exchange (ETDEWEB)

    Alvarado, F.L. [Wisconsin Univ., Madison, WI (United States)

    1994-12-31

    This paper considers the importance of the choice of bifurcation parameter in the determination of the voltage stability limit and the maximum power load ability of a system. When the bifurcation parameter is power demand, the two limits are equivalent. However, when other types of load models and bifurcation parameters are considered, the two concepts differ. The continuation method is considered as a method for determination of voltage stability margins. Three variants of the continuation method are described: the continuation parameter is the bifurcation parameter the continuation parameter is initially the bifurcation parameter, but is free to change, and the continuation parameter is a new `arc length` parameter. Implementations of voltage stability software using continuation methods are described. (author) 23 refs., 9 figs.

  4. Modelling, development and optimization of integrated power LDMOS transistor. Performance limits in terms of energy; Modelisation, conception et optimisation de composant de puissance lateral DMOS integre. Etude des limites de performance en energie

    Energy Technology Data Exchange (ETDEWEB)

    Farenc, D.

    1997-12-16

    Technologies for Smart Power Integrated Circuits combine into a single chip Bipolar and CMOS transistors, plus power with lateral or vertical DMOS transistors. Complexity which has been increasing dramatically since the mid-80`s has allowed to integrate, into a single monolithic solution, entire systems. This thesis deals with the modelling, conception and test of the power integrated LDMOS transistor. The power LDMOS transistor is used as a switching device. It is characterized by two parameters which are the Specific On-resistance R{sub sp} and the breakdown voltage BV{sub DSS}. The LDMOS transistor developed for the new Smart Power technology exhibits a Specific On-resistance of 200 m{Omega}{sup *}mm{sup 2} and a breakdown voltage of 60 V. This device is dedicated to automotive applications. A reduction of the power device which is achieved with a low Specific On-resistance puts forward new issues such as the maximum Energy capability. When the power device is switched-off on an inductive load, a certain amount of energy is dissipated; if it is beyond a certain limit, the device is destroyed. Our goal is to determine the energy limits which are associated with our new Power integrated LDMOS transistor. (author) 28 refs.

  5. To the electrostrictive mechanism of nanosecond-pulsed breakdown in liquid phase

    CERN Document Server

    Seepersad, Yohan; Pekker, Mikhail; Shneider, Mikhail N; Fridman, Alexander

    2013-01-01

    In this study we have studied the initial stage of the nanosecond-pulsed discharge development in liquid phase. Modeling predicts that in the case of fast rising strong nonhomogeneous electric fields in the vicinity of high voltage pin electrode a region saturated with nanoscale non-uniformities may be developed. This phenomenon is attributed to the electrostriction mechanisms and may be used to explain development of breakdown in liquid phase. In this work, schlieren method was used in order to demonstrate formation of negative pressure region in liquids with different dielectric permittivity constants: water, ethanol and ethanol-water mixture. It is shown that this density perturbation, formed at the raising edge of the high voltage pulse, is followed by a generation of a shock wave propagating with the speed of sound away from the electrode, with negative pressure behind it.

  6. Time-dependent dielectric breakdown of MgO magnetic tunnel junctions and novel test method

    Science.gov (United States)

    Kim, Kyungjun; Choi, Chulmin; Oh, Youngtaek; Sukegawa, Hiroaki; Mitani, Seiji; Song, Yunheub

    2017-04-01

    Time-dependent dielectric breakdown (TDDB), which is used to measure reliability, depends on both the thickness of the tunnel barrier and bias voltage. In addition, the heat generated by self-heating in a magnetic tunneling junction (MTJ) affects TDDB. Therefore, we investigated TDDB with the self-heating effect for a MgO tunnel barrier with thicknesses of 1.1 and 1.2 nm by the constant voltage stress (CVS) method. Using the results of this experiment, we predicted a TDDB of 1.0 nm for the tunnel barrier. Also, we suggested the use of not only the CVS method, which is a common way of determining TDDB, but also the constant current stress (CCS) method, which compensates for the disadvantages of the CVS method.

  7. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on tunable functionalized copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede;

    2015-01-01

    High driving voltages currently limit the commercial potential of dielectric elastomers (DEs). One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric permittivity was prepared through the synthesis o...

  8. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on tunable functionalized copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2015-01-01

    High driving voltages currently limit the commercial potential of dielectric elastomers (DEs). One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric permittivity was prepared through the synthesis o...

  9. Experimental and analytical study of the DC breakdown characteristics of polypropylene laminated paper with a butt gap condition considering the insulation design of superconducting cable

    Science.gov (United States)

    Seo, In-jin; Choi, Won; Seong, Jae-gyu; Lee, Bang-wook; Koo, Ja-yoon

    2014-08-01

    It has been reported that the insulation design under DC stress is considered as one of the critical factors in determining the performance of high-voltage direct current (HVDC) superconducting cable. Therefore, it is fundamentally necessary to investigate the DC breakdown characteristics of the composite insulation system consisting of liquid nitrogen (LN2)/polypropylene-laminated-paper (PPLP). In particular, the insulation characteristics under DC polarity reversal condition should be verified to understand the polarity effect of the DC voltage considering the unexpected incidents taking place at line-commutated-converters (LCC) under service at a DC power grid. In this study, to examine the variation of DC electric field strength, the step voltage and polarity reversal breakdown tests are performed under DC stress. Also, we investigate the electric field distributions in a butt gap of the LN2/PPLP condition considering the DC polarity reversal by using simulation software.

  10. Cryocooled Josephson standards for AC voltage metrology

    Science.gov (United States)

    Durandetto, P.; Sosso, A.; Monticone, E.; Trinchera, B.; Fretto, M.; Lacquaniti, V.

    2017-05-01

    The Josephson effect is worldwide used as a basis for constant reference voltages in national metrological institutes and in calibration laboratories of industry. Research on Josephson voltage standards is aiming at a fundamental change also in the metrology of the volt for AC and arbitrary waveforms: programmable Josephson voltage standards converting a digital code into a quantum-accurate stepwise waveform are already available in primary laboratories and even more advanced standards for converting sub-nanosecond binary coded pulses into any arbitrary signal with quantum accuracy are now actively developed and tested. A new experimental setup based on a two-stage Gifford-McMahon cryocooler has been developed at INRiM for the operation of AC-Josephson voltage standards. Among its distinct features, the possibility of employing both the aforementioned techniques (programmable and pulsed Josephson voltage standards) is particularly interesting. Quantum-based AC voltage sine waves have been synthesized with both programmable and pulse-driven arrays, although their accuracy is still limited by thermal oscillations due to the cryocooler piston motion.

  11. Different approach to pulsed high-voltage vacuum-insulation design

    Directory of Open Access Journals (Sweden)

    John G. Leopold

    2007-06-01

    Full Text Available A theoretical methodology promising improved design of vacuum insulation in high-voltage pulsed-power systems is described. It consists of shaping the electromagnetic fields within the system in such a way that charged particles which can in principle initiate vacuum surface breakdown are deflected away from the insulator surface, and secondary electrons, if emitted, are prevented from restriking the surface. Thus, vacuum surface breakdown is prevented before it is able to develop. Our methodology is presented here by a set of case studies.

  12. Turn-on and turn-off voltages of an avalanche p—n junction

    Science.gov (United States)

    Guoqing, Zhang; Dejun, Han; Changjun, Zhu; Xuejun, Zhai

    2012-09-01

    Characteristics of the turn-on and turn-off voltage of avalanche p—n junctions were demonstrated and studied. As opposed to existing reports, the differences between the turn-on and turn-off voltage cannot be neglected when the size of the p—n junction is in the order of microns. The difference increases inversely with the area of a junction, exerting significant influences on characterizing some parameters of devices composed of small avalanche junctions. Theoretical analyses show that the mechanism for the difference lies in the increase effect of the threshold multiplication factor at the turn-on voltage of a junction when the area of a junction decreases. Moreover, the “breakdown voltage" in the formula of the avalanche asymptotic current is, in essence, the avalanche turn-off voltage, and consequently, the traditional expression of the avalanche asymptotic current and the gain of a Geiger mode avalanche photodiode were modified.

  13. VOLTAGE REGULATORS ASYNCHRONOUS GENERATORS

    Directory of Open Access Journals (Sweden)

    Grigorash O. V.

    2015-06-01

    Full Text Available A promising is currently the use of asynchronous generators with capacitive excitation as a source of electricity in stand-alone power systems. Drive asynchronous generators may exercise as a thermal engine and wind wheel wind power plant or turbines of small hydropower plants. The article discusses the structural and schematics of voltage stabilizers and frequency of asynchronous generators with improved operational and technical specifications. Technical novelty of design solutions of the magnetic system and stabilizers asynchronous generator of electricity parameters confirmed by the patents for the invention of the Russian Federation. The proposed technical solution voltage stabilizer asynchronous generators, can reduce the weight of the block capacitors excitation and reactive power compensation, as well as to simplify the control system power circuit which has less power electronic devices. For wind power plants it is an important issue not only to stabilize the voltage of the generator, but also the frequency of the current. Recommend functionality stabilizer schemes parameters of electric power made for direct frequency converters with artificial and natural switching power electronic devices. It is also proposed as part of stabilization systems use single-phase voltage, three-phase transformers with rotating magnetic field, reduce the level of electromagnetic interference generated by power electronic devices for switching, enhance the efficiency and reliability of the stabilizer.

  14. Geomagnetism and Induced Voltage

    Science.gov (United States)

    Abdul-Razzaq, W.; Biller, R. D.

    2010-01-01

    Introductory physics laboratories have seen an influx of "conceptual integrated science" over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it…

  15. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  16. Investigation of multipactor breakdown in communication satellite microwave co-axial systems

    Indian Academy of Sciences (India)

    S K Nagesh; D Revannasiddiah; S V K Shastry

    2005-01-01

    Multipactor breakdown or multipactor discharge is a form of high frequency discharge that may occur in microwave components operating at very low pressures. Some RF components of multi-channel communication satellites have co-axial geometry and handle high RF power under near-vacuum conditions. The breakdown occurs due to secondary electron resonance, wherein electrons move back and forth in synchronism with the RF voltage across the gap between the inner and outer conductors of the co-axial structure. If the yield of secondary electrons from the walls of the co-axial structure is greater than unity, then the electron density increases with time and eventually leads to the breakdown. In this paper, the current due to the oscillating electrons in the co-axial geometry has been treated as a radially oriented Hertzian dipole. The electric field, due to this dipole, at any point in the coaxial structure, may then be determined by employing the dyadic Green’s function technique. This field has been compared with the field that would exist in the absence of multipactor.

  17. Kinetics of nanopore fabrication during controlled breakdown of dielectric membranes in solution

    Science.gov (United States)

    Briggs, Kyle; Charron, Martin; Kwok, Harold; Le, Timothea; Chahal, Sanmeet; Bustamante, José; Waugh, Matthew; Tabard-Cossa, Vincent

    2015-02-01

    Nanopore fabrication by controlled breakdown (CBD) overcomes many of the challenges of traditional nanofabrication techniques, by reliably forming solid-state nanopores sub-2 nm in size in a low-cost and scalable way for nucleic acid analysis applications. Herein, the breakdown kinetics of thin dielectric membranes immersed in a liquid environment are investigated in order to gain deeper insights into the mechanism of solid-state nanopore formation by high electric fields. For various fabrication conditions, we demonstrate that nanopore fabrication time is Weibull-distributed, in support of the hypothesis that the fabrication mechanism is a stochastic process governed by the probability of forming a connected path across the membrane (i.e. a weakest-link problem). Additionally, we explore the roles that various ions and solvents play in breakdown kinetics, revealing that asymmetric pH conditions across the membrane can significantly affect nanopore fabrication time for a given voltage polarity. These results, characterizing the stochasticity of the nanopore fabrication process and highlighting the parameters affecting it, should assist researchers interested in exploiting the potential of CBD for nanofluidic channel fabrication, while also offering guidance towards the conceivable manufacturing of solid-state nanopore-based technologies for DNA sequencing applications.

  18. An Ensemble Learning for Predicting Breakdown Field Strength of Polyimide Nanocomposite Films

    Directory of Open Access Journals (Sweden)

    Hai Guo

    2015-01-01

    Full Text Available Using the method of Stochastic Gradient Boosting, ten SMO-SVR are constructed into a strong prediction model (SGBS model that is efficient in predicting the breakdown field strength. Adopting the method of in situ polymerization, thirty-two samples of nanocomposite films with different percentage compositions, components, and thicknesses are prepared. Then, the breakdown field strength is tested by using voltage test equipment. From the test results, the correlation coefficient (CC, the mean absolute error (MAE, the root mean squared error (RMSE, the relative absolute error (RAE, and the root relative squared error (RRSE are 0.9664, 14.2598, 19.684, 22.26%, and 25.01% with SGBS model. The result indicates that the predicted values fit well with the measured ones. Comparisons between models such as linear regression, BP, GRNN, SVR, and SMO-SVR have also been made under the same conditions. They show that CC of the SGBS model is higher than those of other models. Nevertheless, the MAE, RMSE, RAE, and RRSE of the SGBS model are lower than those of other models. This demonstrates that the SGBS model is better than other models in predicting the breakdown field strength of polyimide nanocomposite films.

  19. X-ray spectromicroscopy investigation of soft and hard breakdown in RRAM devices

    Science.gov (United States)

    Carta, D.; Guttmann, P.; Regoutz, A.; Khiat, A.; Serb, A.; Gupta, I.; Mehonic, A.; Buckwell, M.; Hudziak, S.; Kenyon, A. J.; Prodromakis, T.

    2016-08-01

    Resistive random access memory (RRAM) is considered an attractive candidate for next generation memory devices due to its competitive scalability, low-power operation and high switching speed. The technology however, still faces several challenges that overall prohibit its industrial translation, such as low yields, large switching variability and ultimately hard breakdown due to long-term operation or high-voltage biasing. The latter issue is of particular interest, because it ultimately leads to device failure. In this work, we have investigated the physicochemical changes that occur within RRAM devices as a consequence of soft and hard breakdown by combining full-field transmission x-ray microscopy with soft x-ray spectroscopic analysis performed on lamella samples. The high lateral resolution of this technique (down to 25 nm) allows the investigation of localized nanometric areas underneath permanent damage of the metal top electrode. Results show that devices after hard breakdown present discontinuity in the active layer, Pt inclusions and the formation of crystalline phases such as rutile, which indicates that the temperature increased locally up to 1000 K.

  20. Study of the synergistic effect in dielectric breakdown property of CO2-O2 mixtures

    Science.gov (United States)

    Zhao, Hu; Deng, Yunkun; Lin, Hui

    2017-09-01

    Sulfur hexafluoride, SF6, is a common dielectric medium for high-voltage electrical equipment, but because it is a potent greenhouse gas, it is important to find less environmentally harmful alternatives. In this paper we explore the use of CO2 and O2 as one alternative. We studied the synergistic effect in a mixture of CO2 and O2 from both macroscopic and microscopic perspectives. The effect leads to a dielectric strength of the mixture being greater than the linear interpolation of the dielectric strengths of the two isolated gases. We analyzed the critical reduced electric field strength, (E/N)cr, the breakdown gas pressure reduced electric field, E/p, and the breakdown electron temperature, Tb, and their synergistic effect coefficients for various CO2 concentrations and various products of the gas pressure times the gap distance (pd). A gas discharge and breakdown mechanism in a homogenous electric field is known to be controlled by the generation and disappearance of free electrons, which strongly depend on the electron temperature. The results indicate that adding a small amount of O2 to CO2 can effectively improve the value of (E/N)cr and bring a clear synergistic effect. In addition, significantly different variation trends of the synergistic effect in the E/p and Tb of CO2-O2 mixtures at various CO2 concentrations and pd values were also observed.

  1. Maximum permissible voltage of YBCO coated conductors

    Science.gov (United States)

    Wen, J.; Lin, B.; Sheng, J.; Xu, J.; Jin, Z.; Hong, Z.; Wang, D.; Zhou, H.; Shen, X.; Shen, C.

    2014-06-01

    Superconducting fault current limiter (SFCL) could reduce short circuit currents in electrical power system. One of the most important thing in developing SFCL is to find out the maximum permissible voltage of each limiting element. The maximum permissible voltage is defined as the maximum voltage per unit length at which the YBCO coated conductors (CC) do not suffer from critical current (Ic) degradation or burnout. In this research, the time of quenching process is changed and voltage is raised until the Ic degradation or burnout happens. YBCO coated conductors test in the experiment are from American superconductor (AMSC) and Shanghai Jiao Tong University (SJTU). Along with the quenching duration increasing, the maximum permissible voltage of CC decreases. When quenching duration is 100 ms, the maximum permissible of SJTU CC, 12 mm AMSC CC and 4 mm AMSC CC are 0.72 V/cm, 0.52 V/cm and 1.2 V/cm respectively. Based on the results of samples, the whole length of CCs used in the design of a SFCL can be determined.

  2. Voltage scheduling for low power/energy

    Science.gov (United States)

    Manzak, Ali

    2001-07-01

    Power considerations have become an increasingly dominant factor in the design of both portable and desk-top systems. An effective way to reduce power consumption is to lower the supply voltage since voltage is quadratically related to power. This dissertation considers the problem of lowering the supply voltage at (i) the system level and at (ii) the behavioral level. At the system level, the voltage of the variable voltage processor is dynamically changed with the work load. Processors with limited sized buffers as well as those with very large buffers are considered. Given the task arrival times, deadline times, execution times, periods and switching activities, task scheduling algorithms that minimize energy or peak power are developed for the processors equipped with very large buffers. A relation between the operating voltages of the tasks for minimum energy/power is determined using the Lagrange multiplier method, and an iterative algorithm that utilizes this relation is developed. Experimental results show that the voltage assignment obtained by the proposed algorithm is very close (0.1% error) to that of the optimal energy assignment and the optimal peak power (1% error) assignment. Next, on-line and off-fine minimum energy task scheduling algorithms are developed for processors with limited sized buffers. These algorithms have polynomial time complexity and present optimal (off-line) and close-to-optimal (on-line) solutions. A procedure to calculate the minimum buffer size given information about the size of the task (maximum, minimum), execution time (best case, worst case) and deadlines is also presented. At the behavioral level, resources operating at multiple voltages are used to minimize power while maintaining the throughput. Such a scheme has the advantage of allowing modules on the critical paths to be assigned to the highest voltage levels (thus meeting the required timing constraints) while allowing modules on non-critical paths to be assigned

  3. Pre-breakdown processes in a dielectric fluid in inhomogeneous pulsed electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Shneider, Mikhail N., E-mail: m.n.shneider@gmail.com [Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544 (United States); Pekker, Mikhail [MMSolution, 6808 Walker Street, Philadelphia, Pennsylvania 19135 (United States)

    2015-06-14

    We consider the development of pre-breakdown cavitation nanopores appearing in the dielectric fluid under the influence of the electrostrictive stresses in the inhomogeneous pulsed electric field. It is shown that three characteristic regions can be distinguished near the needle electrode. In the first region, where the electric field gradient is greatest, the cavitation nanopores, occurring during the voltage nanosecond pulse, may grow to the size at which an electron accelerated by the field inside the pores can acquire enough energy for excitation and ionization of the liquid on the opposite pore wall, i.e., the breakdown conditions are satisfied. In the second region, the negative pressure caused by the electrostriction is large enough for the cavitation initiation (which can be registered by optical methods), but, during the voltage pulse, the pores do not reach the size at which the potential difference across their borders becomes sufficient for ionization or excitation of water molecules. And, in the third, the development of cavitation is impossible, due to an insufficient level of the negative pressure: in this area, the spontaneously occurring micropores do not grow and collapse under the influence of surface tension forces. This paper discusses the expansion dynamics of the cavitation pores and their most probable shape.

  4. Pre-breakdown processes in a dielectric fluid in inhomogeneous pulsed electric fields

    Science.gov (United States)

    Shneider, Mikhail N.; Pekker, Mikhail

    2015-06-01

    We consider the development of pre-breakdown cavitation nanopores appearing in the dielectric fluid under the influence of the electrostrictive stresses in the inhomogeneous pulsed electric field. It is shown that three characteristic regions can be distinguished near the needle electrode. In the first region, where the electric field gradient is greatest, the cavitation nanopores, occurring during the voltage nanosecond pulse, may grow to the size at which an electron accelerated by the field inside the pores can acquire enough energy for excitation and ionization of the liquid on the opposite pore wall, i.e., the breakdown conditions are satisfied. In the second region, the negative pressure caused by the electrostriction is large enough for the cavitation initiation (which can be registered by optical methods), but, during the voltage pulse, the pores do not reach the size at which the potential difference across their borders becomes sufficient for ionization or excitation of water molecules. And, in the third, the development of cavitation is impossible, due to an insufficient level of the negative pressure: in this area, the spontaneously occurring micropores do not grow and collapse under the influence of surface tension forces. This paper discusses the expansion dynamics of the cavitation pores and their most probable shape.

  5. A new analytical model of high voltage silicon on insulator (SOI) thin film devices

    Institute of Scientific and Technical Information of China (English)

    Hu Sheng-Dong; Zhang Bo; Li Zhao-Ji

    2009-01-01

    A new analytical model of high voltage silicon on insulator (SOI) thin film devices is proposed, and a formula of silicon critical electric field is derived as a function of silicon film thickness by solving a 2D Poisson equation from an effective ionization rate, with a threshold energy taken into account for electron multiplying. Unlike a conventional silicon critical electric field that is constant and independent of silicon film thickness, the proposed silicon critical electric field increases sharply with silicon film thickness decreasing especially in the case of thin films, and can come to 141 V/μm at a film thickness of 0.1 μm which is much larger than the normal value of about 30 V/μm. From the proposed formula of silicon critical electric field, the expressions of dielectric layer electric field and vertical breakdown voltage (VB,V) are obtained. Based on the model, an ultra thin film can be used to enhance dielectric layer electric field and so increase vertical breakdown voltage for SOI devices because of its high silicon critical electric field, and with a dielectric layer thickness of 2 μm the vertical breakdown voltages reach 852 and 300V for the silicon film thicknesses of 0.1 and 5μm, respectively. In addition, a relation between dielectric layer thickness and silicon film thickness is obtained, indicating a minimum vertical breakdown voltage that should be avoided when an SOI device is designed. 2D simulated results and some experimental results are in good agreement with analytical results.

  6. Radiation effects on floating rings of voltage terminating structure in Si p-on-n detectors

    Energy Technology Data Exchange (ETDEWEB)

    Eremin, V. [Ioffe Physical-Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Egorov, N. [Research Institute of Material Science and Technology, 124460 Zelenograd, Moscow (Russian Federation); Eremin, I. [Ioffe Physical-Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Fadeeva, N. [Ioffe Physical-Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Saint Petersburg Electrotechnical University “LETI”, 197376 St. Petersburg (Russian Federation); Verbitskaya, E., E-mail: elena.verbitskaya@cern.ch [Ioffe Physical-Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

    2013-12-01

    In the 1990s a suggestion was put forward that the space charge limited current mechanism is responsible for stabilization of the I–V characteristics in irradiated Si p-on-n detectors. This mechanism is switched on in the case of high concentration of radiation induced deep traps which via holes accumulation will reduce the electric field in the regions of breakdown. The present study shows that voltage terminating structure (VTS) consisting of the floating p{sup +} rings as a main element for stabilization of I–V characteristics in nonirradiated detectors is still active being irradiated to the fluence beyond space charge sign inversion. This characteristic of VTS can be accounted for by the double peak electric field distribution in heavily irradiated detectors and the punch-through mechanism of current flow between the floating p{sup +} rings in the silicon bulk with high concentration of deep traps. It is shown that VTS operates as a potential divider up to the fluence of 1×10{sup 15} n{sub eq}/cm{sup 2} and it is at higher fluences that the detector stability is maintained only by the space charge limited current mechanism. -- Highlights: •Voltage terminating structure (VTS) operation in Si irradiated detector is studied. •Ring potentials and interring I–V characteristics are measured up to 1×10{sup 15} n{sub eq}/cm{sup 2}. •Double peak electric field maintains VTS action after space charge sign inversion. •VTS operates as a potential divider up to fluence 5×10{sup 14} n{sub eq}/cm{sup 2}. •At fluence 1×10{sup 15} n{sub eq}/cm{sup 2} VTS operation fails and it operates as a single ring.

  7. Deployment of low-voltage regulator considering existing voltage control in medium-voltage distribution systems

    Directory of Open Access Journals (Sweden)

    Hiroshi Kikusato

    2016-01-01

    Full Text Available Many photovoltaic (PV systems have been installed in distribution systems. This installation complicates the maintenance of all voltages within the appropriate range in all low-voltage distribution systems (LVDSs because the trends in voltage fluctuation differ in each LVDS. The installation of a low-voltage regulator (LVR that can accordingly control the voltage in each LVDS has been studied as a solution to this problem. Voltage control in a medium-voltage distribution system must be considered to study the deployment of LVRs. In this study, we installed LVRs in the LVDSs in which the existing voltage-control scheme cannot prevent voltage deviation and performed a numerical simulation by using a distribution system model with PV to evaluate the deployment of the LVRs.

  8. High Voltage Tests in the LUX-ZEPLIN System Test

    Science.gov (United States)

    Whitis, Thomas; Lux-Zeplin Collaboration

    2016-03-01

    The LUX-ZEPLIN (LZ) project is a dark matter direct detection experiment using liquid xenon. The detector is a time projection chamber (TPC) requiring the establishment of a large electric field inside of the detector in order to drift ionization electrons. Historically, many xenon TPC designs have been unable to reach their design fields due to light production and breakdown. The LZ System Test is scaled so that with a cathode voltage of -50 kV, it will have the fields that will be seen in the LZ detector at -100 kV. It will use a fully instrumented but scaled-down version of the LZ TPC design with a vessel set and gas system designed for quick turnaround, allowing for iterative modifications to the TPC prototype and instrumentation. This talk will present results from the high voltage tests performed during the first runs of the LZ System Test.

  9. A high-voltage test for the ATLAS RPC qualification

    CERN Document Server

    Aielli, G; Cardarelli, R; Di Ciaccio, A; Di Simone, A; Liberti, B; Santonico, R

    2004-01-01

    The RPC production sequence for the ATLAS experiment includes a specific test of current absorption at the operating point, which concerns the RPC "gas volumes", namely the bare detectors not yet assembled with the read-out panels and the mechanical support structures. The test, which is carried out at the production site, consists of two phases. The gas volumes are initially conditioned with pure argon, keeping the voltage constant just above the breakdown value of about 2 kV. The final test, performed after the volumes have undergone inner surface varnishing with linseed oil, is based on the measurement of the current-voltage characteristics with the binary operating gas, C//2H//2F//4/i-C//4H//1//0 = 95/5. The results presented here concern 45% of the total foreseen production.

  10. Robust Fallback Scheme for the Danish Automatic Voltage Control System

    DEFF Research Database (Denmark)

    Qin, Nan; Dmitrova, Evgenia; Lund, Torsten;

    2015-01-01

    This paper proposes a fallback scheme for the Danish automatic voltage control system. It will be activated in case of the local station loses telecommunication to the control center and/or the local station voltage violates the acceptable operational limits. It cuts in/out switchable and tap-abl...

  11. On streak breakdown in bypass transition

    Science.gov (United States)

    Schlatter, Philipp; Brandt, Luca; de Lange, H. C.; Henningson, Dan S.

    2008-10-01

    Recent theoretical, numerical, and experimental investigations performed at the Department of Mechanics, KTH Stockholm, and the Department of Mechanical Engineering, Eindhoven University of Technology, are reviewed, and new material is presented to clarify the role of the boundary-layer streaks and their instability with respect to turbulent breakdown in bypass transition in a boundary layer subject to free-stream turbulence. The importance of the streak secondary-instability process for the generation of turbulent spots is clearly shown. The secondary instability manifests itself as a growing wave packet located on the low-speed streak, increasing in amplitude as it is dispersing in the streamwise direction. In particular, qualitative and quantitative data pertaining to temporal sinuous secondary instability of a steady streak, impulse responses both on a parallel and a spatially developing streak, a model problem of bypass transition, and full simulations and experiments of bypass transition itself are collected and compared. In all the flow cases considered, similar characteristics in terms of not only growth rates, group velocity, and wavelengths but also three-dimensional visualizations of the streak breakdown have been found. The wavelength of the instability is about an order of magnitude larger than the local boundary-layer displacement thickness δ∗, the group velocity about 0.8 of the free-stream velocity U∞, and the growth rate on the order of a few percent of U∞/δ∗. The characteristic structures at the breakdown are quasistreamwise vortices, located on the flanks of the low-speed region arranged in a staggered pattern.

  12. Secondary threshold amplitudes for sinuous streak breakdown

    Science.gov (United States)

    Cossu, Carlo; Brandt, Luca; Bagheri, Shervin; Henningson, Dan S.

    2011-07-01

    The nonlinear stability of laminar sinuously bent streaks is studied for the plane Couette flow at Re = 500 in a nearly minimal box and for the Blasius boundary layer at Reδ*=700. The initial perturbations are nonlinearly saturated streamwise streaks of amplitude AU perturbed with sinuous perturbations of amplitude AW. The local boundary of the basin of attraction of the linearly stable laminar flow is computed by bisection and projected in the AU - AW plane providing a well defined critical curve. Different streak transition scenarios are seen to correspond to different regions of the critical curve. The modal instability of the streaks is responsible for transition for AU = 25%-27% for the considered flows, where sinuous perturbations of amplitude below AW ≈ 1%-2% are sufficient to counteract the streak viscous dissipation and induce breakdown. The critical amplitude of the sinuous perturbations increases when the streamwise streak amplitude is decreased. With secondary perturbations amplitude AW ≈ 4%, breakdown is induced on stable streamwise streaks with AU ≈ 13%, following the secondary transient growth scenario first examined by Schoppa and Hussain [J. Fluid Mech. 453, 57 (2002)]. A cross-over, where the critical amplitude of the sinuous perturbation becomes larger than the amplitude of streamwise streaks, is observed for streaks of small amplitude AU < 5%-6%. In this case, the transition is induced by an initial transient amplification of streamwise vortices, forced by the decaying sinuous mode. This is followed by the growth of the streaks and final breakdown. The shape of the critical AU - AW curve is very similar for Couette and boundary layer flows and seems to be relatively insensitive to the nature of the edge states on the basin boundary. The shape of this critical curve indicates that the stability of streamwise streaks should always be assessed in terms of both the streak amplitude and the amplitude of spanwise velocity perturbations.

  13. Nanolaminates: increasing dielectric breakdown strength of composites.

    Science.gov (United States)

    Fillery, Scott P; Koerner, Hilmar; Drummy, Lawrence; Dunkerley, Erik; Durstock, Michael F; Schmidt, Daniel F; Vaia, Richard A

    2012-03-01

    Processable, low-cost, high-performance hybrid dielectrics are enablers for a vast array of green technologies, including high-temperature electrical insulation and pulsed power capacitors for all-electric transportation vehicles. Maximizing the dielectric breakdown field (E(BD)), in conjunction with minimization of leakage current, directly impacts system performance because of the field's quadratic relationship with electrostatic energy storage density. On the basis of the extreme internal interfacial area and ultrafine morphology, polymer-inorganic nanocomposites (PNCs) have demonstrated modest increases in E(BD) at very low inorganic loadings, but because of insufficient control of the hierarchal morphology of the blend, have yielded a precipitous decline in E(BD) at intermediate and high inorganic volume fractions. Here in, we demonstrate that E(BD) can be increased up to these intermediate inorganic volume fractions by creating uniform one-dimensional nanocomposites (nanolaminates) rather than blends of spherical inorganic nanoparticles and polymers. Free standing nanolaminates of highly aligned and dispersed montmorillonite in polyvinyl butyral exhibited enhancements in E(BD) up to 30 vol % inorganic (70 wt % organically modified montmorillonite). These relative enhancements extend up to five times the inorganic fraction observed for random nanoparticle dispersions, and are anywhere from two to four times greater than observed at comparable volume fraction of nanoparticles. The breakdown characteristics of this model system suggested a trade-off between increased path tortuosity and polymer-deficient structural defects. This implies that an idealized PNC morphology to retard the breakdown cascade perpendicular to the electrodes will occur at intermediate volume fractions and resemble a discotic nematic phase where highly aligned, high-aspect ratio nanometer thick plates are uniformly surrounded by nanoscopic regions of polymer.

  14. Analyzing of Dynamic Voltage Restorer in Series Compensation Voltage

    Directory of Open Access Journals (Sweden)

    Naser Parhizgar

    2012-02-01

    Full Text Available The Dynamic Voltage Restorer (DVR is a series-connected compensator to generate a controllable voltage to against the short-term voltage disturbances. The technique of DVR is an effective and cost competitive approach to improve voltage quality at the load side. This study presents a single-phase and threephase DVR system with reduced switch-count topology to protect the sensitive load against abnormal voltage conditions. Most basic function, the DVR configuration consist of a two level Voltage Source Converter (VSC, a dc energy storage device, a coupling transformer Connected in shunt with the ac system This study presents the application of Dynamic Voltage Restorer (DVR on power distribution systems for mitigation of voltage sag at critical loads. DVR is one of the compensating types of custom power devices. The DVR, which is based on forced-commutated Voltage Source Converter (VSC has been proved suitable for the task of compensating voltage sags/swells. Simulation results are presented to illustrate and understand the performances of DVR in supporting load voltages under voltage sags/swells conditions.

  15. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  16. QCD emergent from spontaneous breakdown of relativity

    CERN Document Server

    Nishimura, Kimihide

    2016-01-01

    Spontaneous violation of relativistic invariance of the vacuum can derive quantum chromodynamics from an U(1) Higgs model including fermions, if the emergent theory is Lorentz invariant. In this model, the vacuum becomes anisotropic, and a fermion created on a triplet of spin-one vacua acquires degeneracy analogous to the color degrees of freedom. The Nambu-Goldstone bosons originating from the breakdown of rotational symmetry provide the quasi fermions with SU(3)$\\times$U(1) effective interactions, which are interpretable as mediated by gluons and photons. The confinement of quasi quarks as well as that of Nambu-Goldstone gluons follow from the Lorentz invariance of the emergent theory.

  17. Bioavailability of glucosinolates and their breakdown products

    DEFF Research Database (Denmark)

    Barba Orellana, Francisco Jose; Nikmaram, Nooshin; Roohinejad, Shahin

    2016-01-01

    Glucosinolates are a large group of plant secondary metabolites with nutritional effects, and are mainly found in cruciferous plants. After ingestion, glucosinolates could be partially absorbed in their intact form through the gastrointestinal mucosa. However, the largest fraction is metabolized ...... the bioavailability of glucosinolates and their breakdown products. This review paper summarizes the assimilation, absorption, and elimination of these molecules, as well as the impact of processing on their bioavailability.......Glucosinolates are a large group of plant secondary metabolites with nutritional effects, and are mainly found in cruciferous plants. After ingestion, glucosinolates could be partially absorbed in their intact form through the gastrointestinal mucosa. However, the largest fraction is metabolized...

  18. Ergodicity breakdown and scaling from single sequences

    Energy Technology Data Exchange (ETDEWEB)

    Kalashyan, Armen K. [Center for Nonlinear Science, University of North Texas, P.O. Box 311427, Denton, TX 76203-1427 (United States); Buiatti, Marco [Laboratoire de Neurophysique et Physiologie, CNRS UMR 8119 Universite Rene Descartes - Paris 5 45, rue des Saints Peres, 75270 Paris Cedex 06 (France); Cognitive Neuroimaging Unit - INSERM U562, Service Hospitalier Frederic Joliot, CEA/DRM/DSV, 4 Place du general Leclerc, 91401 Orsay Cedex (France); Grigolini, Paolo [Center for Nonlinear Science, University of North Texas, P.O. Box 311427, Denton, TX 76203-1427 (United States); Dipartimento di Fisica ' E.Fermi' - Universita di Pisa and INFM, Largo Pontecorvo 3, 56127 Pisa (Italy); Istituto dei Processi Chimico, Fisici del CNR Area della Ricerca di Pisa, Via G. Moruzzi 1, 56124 Pisa (Italy)], E-mail: grigo@df.unipi.it

    2009-01-30

    In the ergodic regime, several methods efficiently estimate the temporal scaling of time series characterized by long-range power-law correlations by converting them into diffusion processes. However, in the condition of ergodicity breakdown, the same methods give ambiguous results. We show that in such regime, two different scaling behaviors emerge depending on the age of the windows used for the estimation. We explain the ambiguity of the estimation methods by the different influence of the two scaling behaviors on each method. Our results suggest that aging drastically alters the scaling properties of non-ergodic processes.

  19. RF Breakdown in Drift Tube Linacs

    CERN Document Server

    Stovall, J; Lown, R

    2009-01-01

    The highest RF electric field in drift-tube linacs (DTLs) often occurs on the face of the first drift tube. Typically this drift tube contains a quadrupole focusing magnet whose fringing fields penetrate the face of the drift tube parallel to the RF electric fields in the accelerating gap. It has been shown that the threshold for RF breakdown in RF cavities may be reduced in the presence of a static magnetic field. This note offers a “rule of thumb” for picking the maximum “safe” surface electric field in DTLs based on these measurements.

  20. Cosmological aspects of gauge mediated supersymmetry breakdown

    CERN Document Server

    Dalianis, Ioannis

    2011-01-01

    In this thesis, we study the details of some fundamental cosmological problems of the gauge mediated supersymmetry breakdown and we probe the supersymmetry breaking sector by cosmological arguments. We manifest that problems like the metastable vacuum selection and the gravitino overproduction in the reheated early universe are naturally absent in the most general class of gauge mediation models without including additional ingredients or assumptions. We also find that the gravitino can generically account for the bulk dark matter of the universe. Cosmological implications of a stringy UV-completion of the supersymmetry breaking sector have been also considered.

  1. Laser-induced breakdown spectroscopy in Asia

    Science.gov (United States)

    Wang, Zhen-Zhen; Deguchi, Yoshihiro; Zhang, Zhen-Zhen; Wang, Zhe; Zeng, Xiao-Yan; Yan, Jun-Jie

    2016-12-01

    Laser-induced breakdown spectroscopy (LIBS) is an analytical detection technique based on atomic emission spectroscopy to measure the elemental composition. LIBS has been extensively studied and developed due to the non-contact, fast response, high sensitivity, real-time and multi-elemental detection features. The development and applications of LIBS technique in Asia are summarized and discussed in this review paper. The researchers in Asia work on different aspects of the LIBS study in fundamentals, data processing and modeling, applications and instrumentations. According to the current research status, the challenges, opportunities and further development of LIBS technique in Asia are also evaluated to promote LIBS research and its applications.

  2. Use of vacuum tubes in test instrumentation for measuring characteristics of fast high-voltage semiconductor devices

    Science.gov (United States)

    Berning, D.

    1981-01-01

    Circuits are described that permit measurement of fast events occurring in power semiconductors. These circuits were developed for the dynamic characterization of transistors used in inductive-load switching applications. Fast voltage clamping using vacuum diodes is discussed, and reference is made to a unique circuit that was built for performing nondestructive, reverse-bias, second-breakdown tests on transistors.

  3. Increased voltage photovoltaic cell

    Science.gov (United States)

    Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

    1985-01-01

    A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

  4. Simulation Research of Transient Over-voltage on High-voltage Shunt Capacitor Banks

    Institute of Scientific and Technical Information of China (English)

    HU Quan-wei; ZHOU Xing-xing; SI Wen-rong; ZHANG Yang; LI Jur-hao; LI Yan-ming

    2011-01-01

    With the development of power systems,a large number of shunt capacitors are used to improve power quality in the distribution network.The shunt capacitor banks are operated much frequently,as a result,the capacitor banks will bear large numbers of over-voltage inevitably.If the over-voltage exceeds certain amplitude,the capacitor will be damaged.This paper aims at the capacitor banks in the 35 kV side of Shanghai Xu-xing 500 kV substation,and applies ATP-EMTP to simulate the over-voltages generated by operating the switches under different angles of the source.Finally,according to the results of simulation and theoretical analysis,a best choice (i.e.angles of the source) to switch on capacitor banks is proposed.In this case the over-voltage on the capacitor will be limited to lowest.

  5. Surface Studies of High Voltage Lithium Rich Composition: Li1.2Mn0.525Ni0.175Co0.1O2

    Energy Technology Data Exchange (ETDEWEB)

    Martha, Surendra K [ORNL; Veith, Gabriel M [ORNL; Dudney, Nancy J [ORNL; Nanda, Jagjit [ORNL

    2012-01-01

    This article reports the evidence of surface film formation because of the breakdown of electrolyte upon high voltage cycling (4.9 V) of lithium rich cathode having a nominal composition of, Li1.2Mn0.525Ni0.175Co0.1O2. We studied the chemical composition of this passivation film using electrochemical impedance, X-ray Photoelectron and micro-Raman spectroscopy and the results were compared against the pristine electrode. In order to distinguish the changes in the surface films composition induced by prolonged electrochemical cycling versus chemical passivation effect, we also studied the surface composition of cathode powders aged with electrolytes at 60 oC. Our study shows that electrodes cycled beyond 150 cycles showed a rapid drop in capacity due to increase in the surface film resistance resulting in limited capacity utilization.

  6. A new ROIC with high-voltage protection circuit of HgCdTe e-APD FPA for passive and active imaging

    Science.gov (United States)

    Chen, Guoqiang; Zhang, Junling; Wang, Pan; Zhou, Jie; Gao, Lei; Ding, Ruijun

    2012-12-01

    HgCdTe electrons initiated avalanche photodiodes (e-APDs) in linear multiplication mode can be used for high speed applications such as active imaging. A readout integrated circuit of e-APD FPA is designed for dual mode passive/active imaging system. Unit cell circuit architecture of ROIC includes a high voltage protection module, a Sample-Hold circuit module, a comparator, output driver stage and a integrator module which includes a amplifier and three capacitors. Generally, APD FPA works at reversed bias such as 5V-15V in active imaging mode, and pixels' dark currents increase exponentially as the reverse-bias voltage is increased. Some cells of ROIC may be short to high voltage because of avalanche breakdown of diodes. If there is no protection circuit, the whole ROIC would be burnt out. Thus a protection circuit module introduced in every ROIC cell circuit is necessary to make sure the rest units of ROIC can still work. Conventional 5V CMOS process is applied to implement the high voltage protection with the small area other than LDMOS in high voltage BCD process in the limited 100μm×100μm pitch area. In integrator module, three integration capacitors are included in the ROIC to provide switchable well capacity. One of them can be shared in two modes in order to save area. Constraints such as pixel area and power lead us design toward a simple one-stage cascade operational transconductance amplifier (OTA) as pre-amplifier which can avoid potential instability caused by inaccuracy of MOSFET Model at 77K.

  7. Pickup impact on high-voltage multifinger LDMOS-SCR with low trigger voltage and high failure current

    Science.gov (United States)

    Yang, Liu; Jin, Xiangliang; Wang, Yang; Zhou, Acheng

    2015-12-01

    The impact of inserting P+ pickup on high-voltage multi-finger laterally diffused metal-oxide-semiconductor-silicon-controlled rectifier (LDMOS-SCR) has been studied in this article. Four-finger LDMOS-SCR structures with finger length of 50 μm using 0.5 μm 18 V complementarily diffused metal oxide semiconductor (CDMOS) process were fabricated and tested. Theoretical analysis is carried out to make detailed comparisons between LDMOS-SCR with and without P+ pickup. It verifies that the multi-finger LDMOS-SCR with P+ pickup has greater electrostatic discharge (ESD) robustness and effectiveness. Furthermore, transmission line pulse (TLP) test has been done and the results show that the trigger voltage (Vt1) of the LDMOS-SCR with P+ pickup remarkably decreases from 46.19 to 35.39 V and the second breakdown current (It2) effectively increases from 8.13 to 10.08 A.

  8. Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar;

    2013-01-01

    problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0....

  9. New perspectives in vacuum high voltage insulation. I. The transition to field emission

    CERN Document Server

    Diamond, W T

    1998-01-01

    Vacuum high-voltage insulation has been investigated for many years. Typically, electrical breakdown occurs between two broad-area electrodes at electric fields 100-1000 times lower than the breakdown field (about 5000 MV/m) between a well-prepared point cathode and a broad-area anode. Explanations of the large differences remain unsatisfactory, usually evoking field emission from small projections on the cathode that are subject to higher peak fields. The field emission then produces secondary effects that lead to breakdown. This article provides a significant resolution to this long standing problem. Field emission is not present at all fields, but typically starts after some process occurs at the cathode surface. Three effects have been identified that produce the transition to field emission: work function changes; mechanical changes produced by the strong electrical forces on the electrode surfaces; and gas desorption from the anode with sufficient density to support an avalanche discharge. Material adso...

  10. Planar LTCC transformers for high voltage flyback converters.

    Energy Technology Data Exchange (ETDEWEB)

    Schofield, Daryl (NASCENT Technology Inc. , Watertown, SD); Schare, Joshua M.; Glass, Sarah Jill; Roesler, Alexander William; Ewsuk, Kevin Gregory; Slama, George (NASCENT Technology Inc. , Watertown, SD); Abel, Dave (NASCENT Technology Inc. , Watertown, SD)

    2007-06-01

    This paper discusses the design and use of low-temperature (850 C to 950 C) co-fired ceramic (LTCC) planar magnetic flyback transformers for applications that require conversion of a low voltage to high voltage (> 100V) with significant volumetric constraints. Measured performance and modeling results for multiple designs showed that the LTCC flyback transformer design and construction imposes serious limitations on the achievable coupling and significantly impacts the transformer performance and output voltage. This paper discusses the impact of various design factors that can provide improved performance by increasing transformer coupling and output voltage. The experiments performed on prototype units demonstrated LTCC transformer designs capable of greater than 2 kV output. Finally, the work investigated the effect of the LTCC microstructure on transformer insulation. Although this paper focuses on generating voltages in the kV range, the experimental characterization and discussion presented in this work applies to designs requiring lower voltage.

  11. Influence of polarity of set voltage on the properties of conductive filaments in NiO based nonvolatile memory device

    Science.gov (United States)

    Yan, Hui-Yu; Li, Zhi-Qing

    2017-03-01

    In this paper, we realize the coexistence of bipolar and unipolar resistive switching (RS) in one Pt-Ir/NiO/TiB1+δ cell. The types of RS are controlled by polarity of set voltage and are free from the current compliance. Based on this coexistence, the set voltage and characters of filaments formed in RS are studied. The results show that the types of filaments also show polarity dependence on the set voltage. The positive set voltage can induce metallic filaments while the negative set voltage can result in semiconductor filaments. It reveals that the distribution of magnitude of set voltage shows abnormal polarity dependence in our devices. The combination the theory of interaction between oxygen vacancy defects and one-carrier impact ionization theory of breakdown account for these results. The influence of filament properties on RS types is also discussed.

  12. Voltage Controlled Dynamic Demand Response

    DEFF Research Database (Denmark)

    Bhattarai, Bishnu Prasad; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    . An adaptive dynamic model has been developed to determine composite voltage dependency of an aggregated load on feeder level. Following the demand dispatch or control signal, optimum voltage setting at the LV substation is determined based on the voltage dependency of the load. Furthermore, a new technique...

  13. Charge-pump voltage converter

    Science.gov (United States)

    Brainard, John P.; Christenson, Todd R.

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  14. Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

    Science.gov (United States)

    Mao, Wei; Fan, Ju-Sheng; Du, Ming; Zhang, Jin-Feng; Zheng, Xue-Feng; Wang, Chong; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

    2016-12-01

    A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574112, 61334002, 61306017, 61474091, and 61574110) and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 605119425012).

  15. Vortex ring breakdown induced by topographic forcing

    Energy Technology Data Exchange (ETDEWEB)

    Geiser, J; Kiger, K T, E-mail: kkiger@umd.edu [Department of Mechanical Engineering, University of Maryland, College Park, MD 20910 (United States)

    2011-12-22

    Detailed measurements of the vortex breakdown within a strongly forced impinging jet are presented, with the goal of studying the effects of a small topographic disturbance on the breakdown and turbulence structure. This work is related to an ongoing effort to understand the dynamics of sediment suspension within a landing rotorcraft where a mobile boundary is subject to rapid erosion and deposition. The current work compares the results of a uniform surface to that of a small radial fence placed upstream of the vortex impingement location. The result is a dramatic increase in the coherence of the three-dimensional looping exhibited by the secondary vortex, leading to a more organized and strongly perturbed mean flow. Specifically, a triple decomposition of the velocity fluctuations indicates a very intense periodic stress in the vicinity of the impingement site, followed by a significant decay. Conversely, the random component of the fluctuating stresses gradually increases to modest levels as the coherent contributions decrease, eventually becoming greater than the coherent stress. The fence produces a bifurcation in the flow through the perturbation of the secondary vortex, which in turn creates a high-and low-speed streak on either side of the fence. The subsequent dynamics leads to increased fluctuating stress in the high-speed region, and a dramatically lower stress in the low-speed region, favoring preferential erosion on either side of the topographic disturbance.

  16. Leaf Breakdown in a Tropical Stream

    Science.gov (United States)

    Gonçalves, José Francisco, Jr.; França, Juliana S.; Medeiros, Adriana O.; Rosa, Carlos A.; Callisto, Marcos

    2006-05-01

    The objectives of this study were to investigate leaf breakdown in two reaches of different magnitudes, one of a 3rd (closed riparian vegetation) order and the other of a 4th (open riparian vegetation) order, in a tropical stream and to assess the colonization of invertebrates and microorganisms during the processing of detritus. We observed that the detritus in a reach of 4th order decomposed 2.4 times faster than the detritus in a reach of 3rd order, in which, we observed that nitrate concentration and water velocity were greater. This study showed that the chemical composition of detritus does not appear to be important in evaluating leaf breakdown. However, it was shown to be important to biological colonization. The invertebrate community appeared not to have been structured by the decomposition process, but instead by the degradative ecological succession process. With regards to biological colonization, we observed that the density of bacteria in the initial stages was more important while fungi appeared more in the intermediate and final stages.

  17. Microemulsion systems applied to breakdown petroleum emulsions

    Energy Technology Data Exchange (ETDEWEB)

    Neuma de Castro Dantas, Tereza; Avelino Dantas Neto, Afonso; Ferreira Moura, Everlane [Deptos de Quimica e Eng. Quimica, Universidade Federal do Rio Grande do Norte, Campus Universitario s/n, 59072.970, Natal/RN Campinas (Brazil)

    2001-12-29

    Microemulsion systems obtained using commercial surfactants with demulsifier and emulsion prevention properties have been employed to break down Brazilian crude water-in-oil (W/O) emulsions. These crude oils were supplied by the Brazilian oil company-PETROBRAS-and were characterized by the different Balance sheet of Sediment and Water (BSW) values of 48%, 36%, and 32%. The microemulsion systems formed in this study were composed of an aqueous phase (HCl 5.2% solution); an oil phase (toluene); a cosurfactant/surfactant (C/S) phase (isopropyl alcohol (C)/surfactants (S) with a ratio C/S of 9.0). The microemulsion efficiency to break down oil emulsions was evaluated by a direct contact method between the microemulsions and crude (W/O) emulsions. The Scheffe net statistical planning for mixtures was used to relate the component mass fractions to the relative breakdown of petroleum emulsions. The best composition of the microemulsion system for the complete breakdown of oil emulsions with high BSW values had the lowest C/S phase percentage.

  18. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  19. Effects of Gamma-Ray Irradiation on Dielectric Surface Breakdown of Polybutylene Naphthalate and Polybutylene Terephthalate Under Reduced Pressure

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    With the increasing application of electric and electronic devices in space and nuclear power stations, the polymeric insulation materials are inevitably exposed to various kinds of environments. Accordingly, it becomes necessary to investigate the effects of the radiation and air pressure on insulation materials. This paper describes the effects of gamma-ray irradiation and reduced pressure on dielectric breakdown of polybutylene naphthalate (PBN) and polybutylene terephthalate (PBT) by applying a DC pulse voltage. Both PBN and PBT were irradiated in air up to 100 kGy and then up to 1 000 kGy with a dose rate of 10 kGy/h by using a 60Co gamma-source. The effects of total dose and reduced pressure on the time to dielectric breakdown and discharge quantity were discussed. Obtained results show that, while increasing the total dose, the discharge quantity decreased with PBN, but increased with PBT. With decreasing the air pressure, the discharge quantity increased with PBN, but decreased with PBT. With increasing the total dose, the time to dielectric breakdown increased with PBN, but decreased with PBT. With decreasing the air pressure, the time to dielectric breakdown increased with both PBN and PBT. The experimental results suggest that the chemical structure of polybutylene polymers plays a main role in the result of radiation reaction,which is related to cross-linking and degradation reaction.

  20. The Simultaneous Abolition of Three Starch Hydrolases Blocks Transient Starch Breakdown in Arabidopsis*

    Science.gov (United States)

    Streb, Sebastian; Eicke, Simona; Zeeman, Samuel C.

    2012-01-01

    In this study, we investigated which enzymes are involved in debranching amylopectin during transient starch degradation. Previous studies identified two debranching enzymes, isoamylase 3 (ISA3) and limit dextrinase (LDA), involved in this process. However, plants lacking both enzymes still degrade substantial amounts of starch. Thus, other enzymes/mechanisms must contribute to starch breakdown. We show that the chloroplastic α-amylase 3 (AMY3) also participates in starch degradation and provide evidence that all three enzymes can act directly at the starch granule surface. The isa3 mutant has a starch excess phenotype, reflecting impaired starch breakdown. In contrast, removal of AMY3, LDA, or both enzymes together has no impact on starch degradation. However, removal of AMY3 or LDA in addition to ISA3 enhances the starch excess phenotype. In plants lacking all three enzymes, starch breakdown is effectively blocked, and starch accumulates to the highest levels observed so far. This provides indirect evidence that the heteromultimeric debranching enzyme ISA1-ISA2 is not involved in starch breakdown. However, we illustrate that ISA1-ISA2 can hydrolyze small soluble branched glucans that accumulate when ISA3 and LDA are missing, albeit at a slow rate. Starch accumulation in the mutants correlates inversely with plant growth. PMID:23019330

  1. Regulation of glycogen breakdown and its consequences for skeletal muscle function after training.

    Science.gov (United States)

    Katz, Abram; Westerblad, Håkan

    2014-10-01

    Repeated bouts of physical exercise, i.e., training, induce mitochondrial biogenesis and result in improved physical performance and attenuation of glycogen breakdown during submaximal exercise. It has been suggested that as a consequence of the increased mitochondrial volume, a smaller degree of metabolic stress (e.g., smaller increases in ADP and Pi) is required to maintain mitochondrial respiration in the trained state during exercise at the same absolute intensity. The lower degree of Pi accumulation is believed to account for the diminished glycogen breakdown, since Pi is a substrate for glycogen phosphorylase, the rate-limiting enzyme for glycogenolysis. However, in this review, we present an alternative explanation for the diminished glycogen breakdown. Thus, the lower degree of metabolic stress after training is also associated with smaller increases in AMP (free concentration during contraction at specific intracellular sites) and this results in less activation of phosphorylase b (the non-phosphorylated form of phosphorylase), resulting in diminished glycogen breakdown. Concomitantly, the smaller accumulation of Pi, which interferes with cross-bridge function and intracellular Ca(2+) handling, contributes to the increased fatigue resistance. The delay in glycogen depletion also contributes to enhanced performance during prolonged exercise by functioning as an energy reserve.

  2. Electrical breakdown in helium cells at low temperature

    Science.gov (United States)

    Sethumadhavan, Bhaskar

    2007-05-01

    We have encountered a new phenomenon in the development of a prototype detector of solar neutrinos using liquid helium in which recoil electrons from neutrino scattering are to be detected by extracting them from the liquid and accelerating them in the vacuum by an electric field. In order to understand the possible constraints on such a particle detector using superfluid helium, we have studied the currents produced by a radioactive source in a helium cell having a liquid/vacuum interface at 100 mK. A number of phenomena have been observed that have not been described in the literature. These include the following. (1) The current at very low voltages, V ˜ 0, in a cell having a free surface can be up to 100 times greater than in a filled cell. (2) There is a large amplification of current in modest electric fields with a free surface present in the cell. (3) The amplification becomes sufficiently large such that a breakdown occurs at potential differences across the vacuum on the order of 1000 V. The results for a partially filled cell can be understood in terms of Penning ionization of excimers on the surface of the helium and the subsequent acceleration of electrons across the vacuum. Triplet excimers are created in the liquid by the radioactive source. These excimers propagate with a mean free path that is determined by scattering from 3He atoms and quasiparticles in the superfluid He. If an excimer reaches the surface, it is bound there but is free to move in the plane of the surface. Once bound to the surface these mobile excimers become distributed uniformly over all surfaces (bulk liquid and the film). They move about and annihilate in pairs through the Penning ionization process to create electrons and positive helium ions in the vacuum. An electron in the vacuum in the presence of an electric field is always destined to hit liquid helium, either the bulk liquid or the film on the top surface of the cell. If the energy of the electron is sufficient to

  3. Ultra-compact Marx-type high-voltage generator

    Science.gov (United States)

    Goerz, David A.; Wilson, Michael J.

    2000-01-01

    An ultra-compact Marx-type high-voltage generator includes individual high-performance components that are closely coupled and integrated into an extremely compact assembly. In one embodiment, a repetitively-switched, ultra-compact Marx generator includes low-profile, annular-shaped, high-voltage, ceramic capacitors with contoured edges and coplanar extended electrodes used for primary energy storage; low-profile, low-inductance, high-voltage, pressurized gas switches with compact gas envelopes suitably designed to be integrated with the annular capacitors; feed-forward, high-voltage, ceramic capacitors attached across successive switch-capacitor-switch stages to couple the necessary energy forward to sufficiently overvoltage the spark gap of the next in-line switch; optimally shaped electrodes and insulator surfaces to reduce electric field stresses in the weakest regions where dissimilar materials meet, and to spread the fields more evenly throughout the dielectric materials, allowing them to operate closer to their intrinsic breakdown levels; and uses manufacturing and assembly methods to integrate the capacitors and switches into stages that can be arranged into a low-profile Marx generator.

  4. Benchmarking of Voltage Sag Generators

    DEFF Research Database (Denmark)

    Yang, Yongheng; Blaabjerg, Frede; Zou, Zhixiang

    2012-01-01

    The increased penetration of renewable energy systems, like photovoltaic and wind power systems, rises the concern about the power quality and stability of the utility grid. Some regulations for Low Voltage Ride-Through (LVRT) for medium voltage or high voltage applications, are coming into force...... to guide these grid-connected distributed power generation systems. In order to verify the response of such systems for voltage disturbance, mainly for evaluation of voltage sags/dips, a Voltage Sag Generator (VSG) is needed. This paper evaluates such sag test devices according to IEC 61000 in order...... to provide cheaper solutions to test against voltage sags. Simulation and experimental results demonstrate that the shunt impedance based VSG solution is the easiest and cheapest one for laboratory test applications. The back-to-back fully controlled converter based VSG is the most flexible solution...

  5. Grid Filter Design for a Multi-Megawatt Medium-Voltage Voltage Source Inverter

    DEFF Research Database (Denmark)

    Rockhill, A.A.; Liserre, Marco; Teodorescu, Remus

    2011-01-01

    This paper describes the design procedure and performance of an LCL grid filter for a medium-voltage neutral point clamped (NPC) converter to be adopted for a multimegawatt wind turbine. The unique filter design challenges in this application are driven by a combination of the medium voltage......-megawatt filter connecting a medium-voltage converter switching at low frequency to the electric grid. This paper demonstrates a frequency domain model based approach to determine the optimum filter parameters that provide the necessary performance under all operating conditions given the necessary design...... converter, a limited allowable switching frequency, component physical size and weight concerns, and the stringent limits for allowable injected current harmonics. Traditional design procedures of grid filters for lower power and higher switching frequency converters are not valid for a multi...

  6. Grid Filter Design for a Multi-Megawatt Medium-Voltage Voltage Source Inverter

    DEFF Research Database (Denmark)

    Rockhill, A.A.; Liserre, Marco; Teodorescu, Remus

    2011-01-01

    converter, a limited allowable switching frequency, component physical size and weight concerns, and the stringent limits for allowable injected current harmonics. Traditional design procedures of grid filters for lower power and higher switching frequency converters are not valid for a multi......This paper describes the design procedure and performance of an LCL grid filter for a medium-voltage neutral point clamped (NPC) converter to be adopted for a multimegawatt wind turbine. The unique filter design challenges in this application are driven by a combination of the medium voltage......-megawatt filter connecting a medium-voltage converter switching at low frequency to the electric grid. This paper demonstrates a frequency domain model based approach to determine the optimum filter parameters that provide the necessary performance under all operating conditions given the necessary design...

  7. Realization of an 850V High Voltage Half Bridge Gate Drive IC with a New NFFP HVI Structure

    Institute of Scientific and Technical Information of China (English)

    Ming Qiao; Hong-Jie Wang; Ming-Wei Duan; Jian Fang; Bo Zhang; Zhao-Ji Li

    2007-01-01

    A NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V high voltage half bridge gate drive IC with the NFFP HVI structure is experimentally realized using a thin epitaxial BCD process. Compared with the MFFP HVI structure,the proposed NFFP HVI structure shows simpler process and lower cost. The high side offset voltage in the half bridge gate drive IC with the NFFP HVI structure is almost as same as that with the selfshielding structure.

  8. Symmetry breakdown and coupling constants of leptons

    Directory of Open Access Journals (Sweden)

    Gil C. Marques

    2007-06-01

    Full Text Available Based on a new approach to symmetries of the fundamental interactions we deal, in this paper, with the electroweak interactions of leptons. We show that the coupling constants, arising in the way leptons are coupled to intermediate bosons, can be understood as parameters associated to the breakdown of SU(2 and parity symmetries. The breakdown of both symmetries is characterized by a new parameter (the asymetry parameter of the electroweak interactions. This parameter gives a measure of the strength of breakdown of symmetries. We analyse the behaviour of the theory for three values of this parameter. The most relevant value is the one for which only the electromagnetic interactions do not break parity (the maximally allowed left-right asymetric theory. Maximamally allowed parity asymmetry is a requirement that is met for a value of Weinberg's theta-angle that is quite close to the experimental value of this parameter.Com base em uma formulação nova para simetrias das interações fundamentais nós lidamos, neste trabalho, com interações eletrofracas de leptons. Mostramos que as constantes do acoplamento, associadas aos acoplamentos de bósons intermediários, podem ser entendidas como parâmetros associados à quebra de simetrias SU(2 e paridade. A quebra de ambas as simetrias é caracterizada por um parâmetro novo (o parâmetro de assimetria das interações eletrofracas. Este parâmetro dá uma medida da intensidade com que a simetria é quebrada. Analisamos o comportamento da teoria para três valores deste parâmetro. O valor mais relevante é aquele para o qual apenas as interações eletromagnéticas não quebram a paridade (a teoria assimétrica esquerda-direita permitida da maneira máxima. A assimetria máxima permitida é uma exigência que leva a um ângulo de Weinberg cujo valor é próximo daquele observado experimentalmente.

  9. A prototype of a high-voltage platform for the KRION ion source

    Science.gov (United States)

    Alexandrov, V. S.; Donets, E. E.; Konnov, G. I.; Kosukhin, V. V.; Sidorova, V. O.; Sidorov, A. I.; Shvetsov, V. S.; Trubnikov, G. V.

    2014-09-01

    A high-voltage platform that has been developed for the KRION ion source is described. The platform design concept is explained. The calculations that have been performed of the influence of the design and materials on the source magnetic field make it possible to define a range of materials suitable for manufacturing the platform. The major components of the high-voltage platform, such as a high-voltage power supplier, and decoupling insulators of the high-voltage power source, and the main and supplementary platforms, are chosen and described. It is determined that, to exclude electric breakdowns and corona discharges, one should use an electrically shielded channel with a cryocooler and power supplies for the KRION-source coupling cables.

  10. Piezoelectric transformers for low-voltage generation of gas discharges and ionic winds in atmospheric air

    Science.gov (United States)

    Johnson, Michael J.; Go, David B.

    2015-12-01

    To generate a gas discharge (plasma) in atmospheric air requires an electric field that exceeds the breakdown threshold of ˜30 kV/cm. Because of safety, size, or cost constraints, the large applied voltages required to generate such fields are often prohibitive for portable applications. In this work, piezoelectric transformers are used to amplify a low input applied voltage (corona-like discharges on its corners or on adjacent electrodes. In the proper configuration, these discharges can be used to generate a bulk air flow called an ionic wind. In this work, PT-driven discharges are characterized by measuring the discharge current and the velocity of the induced ionic wind with ionic winds generated using input voltages as low as 7 V. The characteristics of the discharge change as the input voltage increases; this modifies the resonance of the system and subsequent required operating parameters.

  11. Characterization of high voltage components using partial discharges; Caracterisation de composants haute tension par decharges partielles

    Energy Technology Data Exchange (ETDEWEB)

    Boucheteau, R.; Biero, H.; Prisset, C. [CEA Le Ripault, 37 - Tours (France)

    1996-12-31

    Because of the increasing size reduction of high voltage components, the classical dielectric control means do not allow to predict neither the in-service breakdown probability, nor the service life of the components even when submitted to a voltage greater to the nominal value of use. Therefore a new approach is developed which is based on the measurement of partial discharges (PD) occurring with respect to the voltage applied. PDs are due to impurities inside the materials. Pertinent parameters, such as the PDs occurrence voltage, the mean discharge current and the maximum charge of PDs are defined in order to determine a correlation between the PDs measurement and the state of the insulating material. The influence of aging is not well known. Thus the materials are submitted to more or less severe environments in order to determine the significant evolutions of PDs. (J.S.) 2 refs.

  12. The world's first high voltage GaN-on-Diamond power semiconductor devices

    Science.gov (United States)

    Baltynov, Turar; Unni, Vineet; Narayanan, E. M. Sankara

    2016-11-01

    This paper presents the detailed fabrication method and extensive electrical characterisation results of the first-ever demonstrated high voltage GaN power semiconductor devices on CVD Diamond substrate. Fabricated circular GaN-on-Diamond HEMTs with gate-to-drain drift length of 17 μm and source field plate length of 3 μm show an off-state breakdown voltage of ∼1100 V. Temperature characterisation of capacitance-voltage characteristics and on-state characteristics provides insight on the temperature dependence of key parameters such as threshold voltage, 2DEG sheet carrier concentration, specific on-state resistance, and drain saturation current in the fabricated devices.

  13. Enhanced current and voltage regulators for stand-alone applications

    DEFF Research Database (Denmark)

    Federico, de Bosio; Pastorelli, Michele; Antonio DeSouza Ribeiro, Luiz

    2016-01-01

    State feedback decoupling permits to achieve a better dynamic response for Voltage Source in stand-alone applications. The design of current and voltage regulators is performed in the discrete-time domain since it provides better accuracy and allows direct pole placement. As the attainable...... bandwidth of the current loop is mainly limited by computational and PWM delays, a lead compensator structure is proposed to overcome this limitation. The design of the voltage regulator is based on the Nyquist criterion, verifying to guarantee a high sensitivity peak. Discrete-time domain implementation...

  14. Simulation and investigation of SiPM’s leakage currents at low voltages

    Science.gov (United States)

    Parygin, P. P.; Popova, E. V.; Grachev, V. M.

    2017-01-01

    Technology Computer-Aided Design (TCAD) allows us to use computers in order to develop semiconductor processing technologies and devices and optimize them. Within a framework of a study of silicon photomultipliers (SiPM) a simulation of these devices has been made. The simulation was performed for the irradiated SiPMs and current-voltage characteristics were obtained for the modeled devices. Investigation of current-voltage curve below breakdown with regard to the simulated structure was performed. Obtained curves are presented.

  15. Study of edge effects in the breakdown process of p sup + on n-bulk silicon diodes

    CERN Document Server

    Militaru, O; Bozzi, C; Rold, M D; Dell'Orso, R; Dutta, S; Messineo, A; Mihul, A; Tonelli, G; Verdini, P G; Wheadon, R; Xie, Z

    2000-01-01

    The paper describes the role of the n sup + edge implants in the breakdown process of p sup + on n-bulk silicon diodes. Laboratory measurements and simulation studies are presented on a series of test structures aimed at an optimization of the design in the edge region. The dependence of the breakdown voltage on the geometrical parameters of the devices is discussed in detail. Design rules are extracted for the use of n sup + -layers along the scribe line to avoid surface conduction of current generated by the exposed edges. The effect of neutron irradiation has been studied up to a fluence of 1.8x10 sup 1 sup 5 cm sup - sup 2.

  16. Electron drift velocity in SF{sub 6} in strong electric fields determined from rf breakdown curves

    Energy Technology Data Exchange (ETDEWEB)

    Lisovskiy, V; Yegorenkov, V [Department of Physics and Technology, Kharkov National University, Svobody sq.4, Kharkov 61077 (Ukraine); Booth, J-P [Laboratoire de Physique des Plasmas, Ecole Polytechnique, Palaiseau 91128 (France); Landry, K [Unaxis Displays Division France SAS, 5, Rue Leon Blum, Palaiseau 91120 (France); Douai, D [Physical Sciences Division, Institute for Magnetic Fusion Research, CEA Centre de Cadarache, F-13108 Saint Paul lez Durance Cedex (France); Cassagne, V, E-mail: lisovskiy@yahoo.co [Developpement Photovoltaique Couches Minces, Total, 2, place Jean Millier, La Defense 6, 92400 Courbevoie (France)

    2010-09-29

    This paper presents measurements of the electron drift velocity V{sub dr} in SF{sub 6} gas for high reduced electric fields (E/N = 330-5655 Td (1 Td = 10{sup -17} V cm{sup 2})). The drift velocities were obtained using the method of Lisovskiy and Yegorenkov (1998 J. Phys. D: Appl. Phys. 31 3349) based on the determination of the pressure and voltage of the turning points of rf capacitive discharge breakdown curves for a range of electrode spacings. The V{sub dr} values thus obtained were in good agreement with those calculated from the cross-sections of Phelps and Van Brunt (1988 J. Appl. Phys. 64 4269) using the BOLSIG code. The validity of the Lisovskiy-Yegorenkov method is discussed and we show that it is applicable over the entire E/N range where rf discharge ignition at breakdown occurs for rf frequencies of 13.56 MHz or above.

  17. Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

    DEFF Research Database (Denmark)

    Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

    2017-01-01

    This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... analysis, which is simple for computation and requires moderate automation and communication infrastructure. The proposed method is suitable for a hierarchical control structure where a supervisory controller has the provision to adapt the settings of local PV inverter controllers for overall system...

  18. Heat-pump performance: voltage dip/sag, under-voltage and over-voltage

    Directory of Open Access Journals (Sweden)

    William J.B. Heffernan

    2014-12-01

    Full Text Available Reverse cycle air-source heat-pumps are an increasingly significant load in New Zealand and in many other countries. This has raised concern over the impact wide-spread use of heat-pumps may have on the grid. The characteristics of the loads connected to the power system are changing because of heat-pumps. Their performance during under-voltage events such as voltage dips has the potential to compound the event and possibly cause voltage collapse. In this study, results from testing six heat-pumps are presented to assess their performance at various voltages and hence their impact on voltage stability.

  19. Enzymatic Breakdown of Type II Collagen in the Human Vitreous

    NARCIS (Netherlands)

    van Deemter, Marielle; Pas, Hendri H.; Kuijer, Roel; van der Worp, Roelofje J.; Hooymans, Johanna M. M.; Los, Leonoor I.

    2009-01-01

    PURPOSE. To investigate whether enzymatic collagen breakdown is an active process in the human vitreous. METHODS. Human donor eyes were used for immunohistochemistry to detect the possible presence of the matrix metalloproteinase (MMP)-induced type II collagen breakdown product col2-3/4C-short in

  20. 19 CFR 141.87 - Breakdown on component materials.

    Science.gov (United States)

    2010-04-01

    ... 19 Customs Duties 2 2010-04-01 2010-04-01 false Breakdown on component materials. 141.87 Section... OF THE TREASURY (CONTINUED) ENTRY OF MERCHANDISE Invoices § 141.87 Breakdown on component materials. Whenever the classification or appraisement of merchandise depends on the component materials, the invoice...