High-voltage atmospheric breakdown across intervening rutile dielectrics.

Energy Technology Data Exchange (ETDEWEB)

Williamson, Kenneth Martin; Simpson, Sean; Coats, Rebecca Sue; Jorgenson, Roy Eberhardt; Hjalmarson, Harold Paul; Pasik, Michael Francis

2013-09-01

This report documents work conducted in FY13 on electrical discharge experiments performed to develop predictive computational models of the fundamental processes of surface breakdown in the vicinity of high-permittivity material interfaces. Further, experiments were conducted to determine if free carrier electrons could be excited into the conduction band thus lowering the effective breakdown voltage when UV photons (4.66 eV) from a high energy pulsed laser were incident on the rutile sample. This report documents the numerical approach, the experimental setup, and summarizes the data and simulations. Lastly, it describes the path forward and challenges that must be overcome in order to improve future experiments for characterizing the breakdown behavior for rutile.

The effect of external visible light on the breakdown voltage of a long discharge tube

Science.gov (United States)

Shishpanov, A. I.; Ionikh, Yu. Z.; Meshchanov, A. V.

2016-06-01

The breakdown characteristics of a discharge tube with a configuration typical of gas-discharge light sources and electric-discharge lasers (a so-called "long discharge tube") filled with argon or helium at a pressure of 1 Torr have been investigated. A breakdown has been implemented using positive and negative voltage pulses with a linear leading edge having a slope dU/ dt ~ 10-107 V/s. Visible light from an external source (halogen incandescent lamp) is found to affect the breakdown characteristics. The dependences of the dynamic breakdown voltage of the tube on dU/ dt and on the incident light intensity are measured. The breakdown voltage is found to decrease under irradiation of the high-voltage anode of the tube in a wide range of dU/ dt. A dependence of the effect magnitude on the light intensity and spectrum is obtained. Possible physical mechanisms of this phenomenon are discussed.

A new SOI high-voltage device with a step-thickness drift region and its analytical model for the electric field and breakdown voltage

International Nuclear Information System (INIS)

Luo Xiaorong; Zhang Wei; Zhang Bo; Li Zhaoji; Yang Shouguo; Zhan Zhan; Fu Daping

2008-01-01

A new SOI high-voltage device with a step-thickness drift region (ST SOI) and its analytical model for the two-dimension electric field distribution and the breakdown voltage are proposed. The electric field in the drift region is modulated and that of the buried layer is enhanced by the variable thickness SOI layer, thereby resulting in the enhancement of the breakdown voltage. Based on the Poisson equation, the expression for the two-dimension electric field distribution is presented taking the modulation effect into account, from which the RESURF (REduced SURface Field) condition and the approximate but explicit expression for the maximal breakdown voltage are derived. The analytical model can explain the effects of the device parameters, such as the step height and the step length of the SOI layer, the doping concentration and the buried oxide thickness, on the electric field distribution and the breakdown voltage. The validity of this model is demonstrated by a comparison with numerical simulations. Improvement on both the breakdown voltage and the on-resistance (R on ) for the ST SOI is obtained due to the variable thickness SOI layer

A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

Science.gov (United States)

Kim, Dong Young; Seok, Ogyun; Park, Himchan; Bahng, Wook; Kim, Hyoung Woo; Park, Ki Cheol

2018-02-01

We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low work-function material of poly-Si as an anode electrode. Also, reverse breakdown voltage was successfully improved from 901 to 1154 V due to a shrunk low-work-function Schottky region by a proposed self-align etching process between poly-Si and SiC. SiC TSBS with poly-Si/Ni dual Schottky scheme is a suitable structure for high-efficiency rectification and high-voltage blocking operation.

Experimental research for vacuum gap breakdown in high voltage multi-pulse

International Nuclear Information System (INIS)

Huang Ziping; He Jialong; Chen Sifu; Deng Jianjun; Wang Liping

2008-01-01

Base on the breakdown theory of vacuum gaps, experiments have been done to find out the breakdown electric field intensities in high voltage single-and triple-pulse for 26 vacuum gaps with different shapes. The experimental results match up to the theory and confirm the effect of the pulse-number increase on the breakdown electric field intensity. The key point to decide the macroscopical breakdown electric field intensity of a vacuum gap has been pointed out with some advises about the design of a multi-pulse linear inductive accelerator's accelerate gap. (authors)

Breakdown Characteristic Analysis of Paper- Oil Insulation under AC and DC Voltage

Science.gov (United States)

Anuar, N. F.; Jamail, N. A. M.; Rahman, R. A.; Kamarudin, M. S.

2017-08-01

This paper presents the study of breakdown characteristic of Kraft paper insulated with two different types of insulating fluid, which are Palm oil and Coconut oil. Palm oil and Coconut oil are chosen as the alternative fluid to the transformer oil because it has high potential and environmentally-friendly. The Segezha Kraft papers with various thicknesses (65.5 gsm, 75 gsm, 85gsm, 90 gsm) have been used in this research. High Voltage Direct Current (HVDC), High Voltage Alternating Current (HVAC) and carbon track and severity analysis is conducted to observe the sample of aging Kraft paper. These samples have been immersed using Palm oil and Coconut oil up to 90 days to observe the absorption rate. All samples started to reach saturation level at 70 days of immersion. HVDC and HVAC breakdown experiments have been done after the samples had reached the saturation level based on normal condition, immersed in Palm oil and immersed in Coconut oil. All samples immersed in liquid show different breakdown voltage reading compared to normal condition. The analysis of carbon track and severity on surface has been done using Analytical Scanning Electron Microscope (SEM) Analysis. The results of the experiment show that the sample of Kraft paper immersed in Palm oil was better than Coconut oil immersed sample. Therefore the sample condition was the main factor that determines the value of breakdown voltage test. Introduction

Source-Drain Punch-Through Analysis of High Voltage Off-State AlGaN/GaN HEMT Breakdown

Science.gov (United States)

Jiang, H.; Li, X.; Wang, J.; Zhu, L.; Wang, H.; Liu, J.; Wang, M.; Yu, M.; Wu, W.; Zhou, Y.; Dai, G.

2017-06-01

AlGaN/GaN high-electron mobility transistor’s (HEMT’s) off-state breakdown is investigated using conventional three-terminal off-state breakdown I-V measurement. Competition between gate leakage and source-injection buffer leakage (SIBL) is discussed in detail. It is found that the breakdown is dominated by source-injection which is sensitive to gate voltage and gate length at large gate-to-drain spacing (Lgd > 7μm), where a threshold drain voltage of the occurrence of the SIBL current in GaN buffer exists, and after this threshold voltage the SIBL current continually increased till the buffer breakdown. Our analysis showed that due to the punch-through effect in the buffer, a potential barrier between 2DEG and GaN buffer at the source side mainly controlled by the drain voltage determines the buffer leakage current and the occurrence of the following buffer breakdown, which could explain the experimentally observed breakdown phenomenon.

The humidity effect on the breakdown voltage characteristics and the transport parameters of air

International Nuclear Information System (INIS)

Radmilović-Radjenović, M.; Radjenović, B.; Nikitović, Ž.; Matejčik, Š.; Klas, M.

2012-01-01

This paper contains experimental results for the direct current (DC) breakdown voltages and calculated transport parameters for dry, synthetic and ambient air. The breakdown voltage curves for dry, ambient and synthetic air at the gap size of 100μm are very similar. The differences between them are much more pronounced at the interelectrode separation of 20μm, especially at the right hand branch of the breakdown voltage curves. On the other hand, the effective yields γ for dry and synthetic air are in disagreement at lower values of the E/p. Results of calculations based on the Two Term Approximation indicate that the humidity has no a great influence on the transport parameters at all range of the reduce field E/N.

Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages

CERN Document Server

Kum, B H; Shin, M W; Park, J D

1999-01-01

This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si sub x B sub y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm sup 2 at a forward voltage of 2 V. The breakdown of the Pt. 4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

International Nuclear Information System (INIS)

Luo Jun; Zhao Sheng-Lei; Mi Min-Han; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Chen Wei-Wei; Hou Bin

2016-01-01

The effects of gate length L G on breakdown voltage V BR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with L G = 1 μm∼ 20 μm. With the increase of L G , V BR is first increased, and then saturated at L G = 3 μm. For the HEMT with L G = 1 μm, breakdown voltage V BR is 117 V, and it can be enhanced to 148 V for the HEMT with L G = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with L G > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with L G = 3 μm∼20 μm, and their breakdown voltages are in a range of 140 V–156 V. (paper)

Subnanosecond breakdown development in high-voltage pulse discharge: Effect of secondary electron emission

Science.gov (United States)

Alexandrov, A. L.; Schweigert, I. V.; Zakrevskiy, Dm. E.; Bokhan, P. A.; Gugin, P.; Lavrukhin, M.

2017-10-01

A subnanosecond breakdown in high-voltage pulse discharge may be a key tool for superfast commutation of high power devices. The breakdown in high-voltage open discharge at mid-high pressure in helium was studied in experiment and in kinetic simulations. The kinetic model of electron avalanche development was constructed, based on PIC-MCC simulations, including dynamics of electrons, ions and fast helium atoms, produced by ions scattering. Special attention was paid to electron emission processes from cathode, such as: photoemission by Doppler-shifted resonant photons, produced in excitation processes involving fast atoms; electron emission by ions and fast atoms bombardment of cathode; the secondary electron emission (SEE) by hot electrons from bulk plasma. The simulations show that the fast atoms accumulation is the main reason of emission growth at the early stage of breakdown, but at the final stage, when the voltage on plasma gap diminishes, namely the SEE is responsible for subnanosecond rate of current growth. It was shown that the characteristic time of the current growth can be controlled by the SEE yield. The influence of SEE yield for three types of cathode material (titanium, SiC, and CuAlMg-alloy) was tested. By changing the pulse voltage amplitude and gas pressure, the area of existence of subnanosecond breakdown is identified. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time value as small as τs = 0.4 ns, for the pulse voltage amplitude of 5÷12 kV. An increase of gas pressure from 15 Torr to 30 Torr essentially decreases the time of of current front growth, whereas the pulse voltage variation weakly affects the results.

Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

Energy Technology Data Exchange (ETDEWEB)

Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.; Grekhov, I. V. [Ioffe Physical–Technical Institute (Russian Federation)

2017-03-15

p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

Effect of secondary electron emission on subnanosecond breakdown in high-voltage pulse discharge

Science.gov (United States)

Schweigert, I. V.; Alexandrov, A. L.; Gugin, P.; Lavrukhin, M.; Bokhan, P. A.; Zakrevsky, Dm E.

2017-11-01

The subnanosecond breakdown in open discharge may be applied for producing superfast high power switches. Such fast breakdown in high-voltage pulse discharge in helium was explored both in experiment and in kinetic simulations. The kinetic model of electron avalanche development was developed using PIC-MCC technique. The model simulates motion of electrons, ions and fast helium atoms, appearing due to ions scattering. It was shown that the mechanism responsible for ultra-fast breakdown development is the electron emission from cathode. The photoemission and emission by ions or fast atoms impact is the main reason of current growth at the early stage of breakdown, but at the final stage, when the voltage on discharge gap drops, the secondary electron emission (SEE) is responsible for subnanosecond time scale of current growth. It was also found that the characteristic time of the current growth τS depends on the SEE yield of the cathode material. Three types of cathode material (titanium, SiC, and CuAlMg-alloy) were tested. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time as small as τS = 0.4 ns, for the pulse voltage amplitude of 5- 12 kV..

Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

Energy Technology Data Exchange (ETDEWEB)

Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my [Centre of Innovative Nanostructures and Nanodevices, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750 Tronoh, Perak (Malaysia)

2014-03-24

Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

The Studies of a Vacuum Gap Breakdown after High-Current Arc Interruption with Increasing the Voltage

Science.gov (United States)

Schneider, A. V.; Popov, S. A.; Batrakov, A. V.; Dubrovskaya, E. L.; Lavrinovich, V. A.

2017-12-01

Vacuum-gap breakdown has been studied after high-current arc interruption with a subsequent increase in the transient recovery voltage across a gap. The effects of factors, such as the rate of the rise in the transient voltage, the potential of the shield that surrounds a discharge gap, and the arc burning time, have been determined. It has been revealed that opening the contacts earlier leads to the formation of an anode spot, which is the source of electrode material vapors into the discharge gap after current zero moment. Under the conditions of increasing voltage, this fact results in the breakdown. Too late opening leads to the breakdown of a short gap due to the high electric fields.

Dielectric oil-based polymer actuator for improved thickness strain and breakdown voltage

International Nuclear Information System (INIS)

Cho, Min Sung; Yamamoto, Akio

2016-01-01

Dielectric elastomer actuators (DEAs) have been increasingly investigated as alternative actuators to conventional ones. However, DEAs suffer from high rates of premature failure. Therefore, this study proposes a dielectric oil-based polymer actuator, also called a Dielectric liquid actuator (DLA), to compensate for the drawbacks of DEAs. DLA was experimentally compared with conventional DEAs. Results showed that DLA successfully prevented thermal runaway at defects in the electrode and excessive thinning of the film, resulting in increased breakdown voltage. Consequently, premature failure was inhibited, and the performance was improved. The breakdown voltages of DLA and DEA were 6000 and 2000 V, respectively, and their maximum thickness strains were 49.5% and 37.5%, respectively

Dielectric oil-based polymer actuator for improved thickness strain and breakdown voltage

Energy Technology Data Exchange (ETDEWEB)

Cho, Min Sung; Yamamoto, Akio [Dept. of Precision Engineering, School of Engineering, The University of Tokyo, Tokyo (Japan)

2016-09-15

Dielectric elastomer actuators (DEAs) have been increasingly investigated as alternative actuators to conventional ones. However, DEAs suffer from high rates of premature failure. Therefore, this study proposes a dielectric oil-based polymer actuator, also called a Dielectric liquid actuator (DLA), to compensate for the drawbacks of DEAs. DLA was experimentally compared with conventional DEAs. Results showed that DLA successfully prevented thermal runaway at defects in the electrode and excessive thinning of the film, resulting in increased breakdown voltage. Consequently, premature failure was inhibited, and the performance was improved. The breakdown voltages of DLA and DEA were 6000 and 2000 V, respectively, and their maximum thickness strains were 49.5% and 37.5%, respectively.

Breakdown characteristics of xenon HID Lamps

Science.gov (United States)

Babaeva, Natalia; Sato, Ayumu; Brates, Nanu; Noro, Koji; Kushner, Mark

2009-10-01

The breakdown characteristics of mercury free xenon high intensity discharge (HID) lamps exhibit a large statistical time lag often having a large scatter in breakdown voltages. In this paper, we report on results from a computational investigation of the processes which determine the ignition voltages for positive and negative pulses in commercial HID lamps having fill pressures of up to 20 atm. Steep voltage rise results in higher avalanche electron densities and earlier breakdown times. Circuit characteristics also play a role. Large ballast resistors may limit current to the degree that breakdown is quenched. The breakdown voltage critically depends on cathode charge injection by electric field emission (or other mechanisms) which in large part controls the statistical time lag for breakdown. For symmetric lamps, ionization waves (IWs) simultaneously develop from the bottom and top electrodes. Breakdown typically occurs when the top and bottom IWs converge. Condensed salt layers having small conductivities on the inner walls of HID lamps and on the electrodes can influence the ignition behavior. With these layers, IWs tend to propagate along the inner wall and exhibit a different structure depending on the polarity.

Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

Science.gov (United States)

Watahiki, Tatsuro; Yuda, Yohei; Furukawa, Akihiko; Yamamuka, Mikio; Takiguchi, Yuki; Miyajima, Shinsuke

2017-11-01

Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes was lower than that of the Schottky barrier diode due to the higher barrier height against the electron. The ideality factor of the p-n diode was 1.31. It indicated that some portion of the recombination current at the interface contributed to the forward current, but the diffusion current was the dominant. The forward current more than 100 A/cm2 indicated the lower conduction band offset at the hetero-interface between Cu2O and Ga2O3 layers than that predicted from the bulk properties, resulting in such a high forward current without limitation. These results open the possibility of advanced device structures for wide bandgap Ga2O3 to achieve higher breakdown voltage and lower on-resistance.

One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

International Nuclear Information System (INIS)

Zhang Jun; Guo Yu-Feng; Xu Yue; Lin Hong; Yang Hui; Hong Yang; Yao Jia-Fei

2015-01-01

A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device. (paper)

Breakdown voltage mapping through voltage dependent ReBEL intensity imaging of multi-crystalline Si solar cells

Science.gov (United States)

Dix-Peek, RM.; van Dyk, EE.; Vorster, FJ.; Pretorius, CJ.

2018-04-01

Device material quality affects both the efficiency and the longevity of photovoltaic (PV) cells. Therefore, identifying these defects can be beneficial in the development of more efficient and longer lasting PV cells. In this study, a combination of spatially-resolved, electroluminescence (EL), and light beam induced current (LBIC) measurements, were used to identify specific defects and features of a multi-crystalline Si PV cells. In this study, a novel approach is used to map the breakdown voltage of a PV cell through voltage dependent Reverse Bias EL (ReBEL) intensity imaging.

Energy dissipation on ion-accelerator grids during high-voltage breakdown

International Nuclear Information System (INIS)

Menon, M.M.; Ponte, N.S.

1981-01-01

The effects of stored energy in the system capacitance across the accelerator grids during high voltage vacuum breakdown are examined. Measurements were made of the current flow and the energy deposition on the grids during breakdown. It is shown that only a portion (less than or equal to 40 J) of the total stored energy (congruent to 100 J) is actually dissipated on the grids. Most of the energy is released during the formation phase of the vacuum arc and is deposited primarily on the most positive grid. Certain abnormal situations led to energy depositions of about 200 J on the grid, but the ion accelerator endured them without exhibiting any deterioration in performance

Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure

International Nuclear Information System (INIS)

Li Qi; Wang Weidong; Zhao Qiuming; Wei Xueming

2012-01-01

A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology (SB) is reported. The P-type epitaxial layer is embedded between an N-type drift region and an N-type substrate to block the conduction path in the off-state and change the distributions of the bulk electric field. The substrate bias strengthens the charge share effect of the drift region near the source, and the vertical electric field peak under the drain is decreased, which is especially helpful in improving the vertical breakdown voltage in a lateral power device with a thin drift region. The numerical results by MEDICI indicate that the breakdown voltage of the proposed device is increased by 97% compared with a conventional LDMOS, while maintaining a lowon-resistance. (semiconductor devices)

The Significance of Breakdown Voltages for Quality Assurance of Low-Voltage BME Ceramic Capacitors

Science.gov (United States)

Teverovsky, Alexander A.

2014-01-01

Application of thin dielectric, base metal electrode (BME) ceramic capacitors for high-reliability applications requires development of testing procedures that can assure high quality and reliability of the parts. In this work, distributions of breakdown voltages (VBR) in variety of low-voltage BME multilayer ceramic capacitors (MLCCs) have been measured and analyzed. It has been shown that analysis of the distributions can indicate the proportion of defective parts in the lot and significance of the defects. Variations of the distributions after solder dip testing allow for an assessment of the robustness of capacitors to soldering-related stresses. The drawbacks of the existing screening and qualification methods to reveal defects in high-value, low-voltage MLCCs and the importance of VBR measurements are discussed. Analysis has shown that due to a larger concentration of oxygen vacancies, defect-related degradation of the insulation resistance (IR) and failures are more likely in BME compared to the precious metal electrode (PME) capacitors.

Study of the degradation of the breakdown voltage of a super-junction power MOSFET due to charge imbalance

International Nuclear Information System (INIS)

Kondekar, Pravin N.; Oh, Hwan-Sool; Kim, Young-Beom

2006-01-01

In this research, we analytically designed a super-junction (SJ) structure and used a simulation tool to study its off-state charge imbalance behavior. In the case of a SJ MOSFET (CoolMOS TM ), designed for the lowest specific on- resistance R on , the MOS part of the transistor (channel region) affected the symmetry, creating a charge imbalance; in addition to this, the imbalance in the SJ drift layer, which was inherently due to limitations in the fabrication process was simulated by varying the doping density of the pillars up to 10 %. The underlying physical mechanisms responsible for the reduction of the breakdown voltage (BV) were investigated in detail by using the electric field profiles and potential contours. The effect of varying the junction depth of a p-body/well and the cell pitch on the breakdown voltage was also analyzed. The trade off between BV sensitivity and specific R on was also investigated.

Hopf bifurcation and chaos from torus breakdown in voltage-mode controlled DC drive systems

International Nuclear Information System (INIS)

Dai Dong; Ma Xikui; Zhang Bo; Tse, Chi K.

2009-01-01

Period-doubling bifurcation and its route to chaos have been thoroughly investigated in voltage-mode and current-mode controlled DC motor drives under simple proportional control. In this paper, the phenomena of Hopf bifurcation and chaos from torus breakdown in a voltage-mode controlled DC drive system is reported. It has been shown that Hopf bifurcation may occur when the DC drive system adopts a more practical proportional-integral control. The phenomena of period-adding and phase-locking are also observed after the Hopf bifurcation. Furthermore, it is shown that the stable torus can breakdown and chaos emerges afterwards. The work presented in this paper provides more complete information about the dynamical behaviors of DC drive systems.

High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

Science.gov (United States)

Bae, Jinho; Kim, Hyoung Woo; Kang, In Ho; Yang, Gwangseok; Kim, Jihyun

2018-03-01

We have demonstrated a β-Ga2O3 metal-semiconductor field-effect transistor (MESFET) with a high off-state breakdown voltage (344 V), based on a quasi-two-dimensional β-Ga2O3 field-plated with hexagonal boron nitride (h-BN). Both the β-Ga2O3 and h-BN were mechanically exfoliated from their respective crystal substrates, followed by dry-transfer onto a SiO2/Si substrate for integration into a high breakdown voltage quasi-two-dimensional β-Ga2O3 MESFETs. N-type conducting behavior was observed in the fabricated β-Ga2O3 MESFETs, along with a high on/off current ratio (>106) and excellent current saturation. A three-terminal off-state breakdown voltage of 344 V was obtained, with a threshold voltage of -7.3 V and a subthreshold swing of 84.6 mV/dec. The distribution of electric fields in the quasi-two-dimensional β-Ga2O3 MESFETs was simulated to analyze the role of the dielectric h-BN field plate in improving the off-state breakdown voltage. The stability of the field-plated β-Ga2O3 MESFET in air was confirmed after storing the MESFET in ambient air for one month. Our results pave the way for unlocking the full potential of β-Ga2O3 for use in a high-power nano-device with an ultrahigh breakdown voltage.

Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

Directory of Open Access Journals (Sweden)

Sangeeta Singh

2016-03-01

Full Text Available In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS to lower the breakdown voltage of conventional impact ionization MOS (IMOS and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization and source induced barrier tunneling. The silicide source offers very low parasitic resistance, the outcome of which is an increment in voltage drop across the intrinsic region for the same applied bias. This reduces operating voltage and hence, it exhibits a significant reduction in both breakdown and threshold voltage. STS-IMOS shows high immunity against hot electron damage. As a result of this the device reliability increases magnificently. The analytical model for impact ionization current (Iii is developed based on the integration of ionization integral (M. Similarly, to get Schottky tunneling current (ITun expression, Wentzel–Kramers–Brillouin (WKB approximation is employed. Analytical models for threshold voltage and subthreshold slope is optimized against Schottky barrier height (ϕB variation. The expression for the drain current is computed as a function of gate-to-drain bias via integral expression. It is validated by comparing it with the technology computer-aided design (TCAD simulation results as well. In essence, this analytical framework provides the physical background for better understanding of STS-IMOS and its performance estimation.

Junction depth dependence of breakdown in silicon detector diodes

International Nuclear Information System (INIS)

Beck, G.A.; Carter, A.A.; Carter, J.R.; Greenwood, N.M.; Lucas, A.D.; Munday, D.J.; Pritchard, T.W.; Robinson, D.; Wilburn, C.D.; Wyllie, K.

1996-01-01

The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction.We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage,in reasonable agreement with previous studies of junction breakdown. (orig.)

The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

Science.gov (United States)

Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias

2018-02-01

A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.

Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

International Nuclear Information System (INIS)

Betta, G.-F. Dalla; Mendicino, R.; Povoli, M.; Sultan, D.M.S.; Ayllon, N.; Hoeferkamp, M.; McDuff, H.; Seidel, S.; Boscardin, M.; Zorzi, N.; Mattiazzo, S.

2016-01-01

We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

Calculations following voltage breakdown in a single-ended Van de Graaff with an accelerator tube

International Nuclear Information System (INIS)

Staniforth, J.A.

1979-01-01

Calculation of voltages and voltage gradients in the terminal, along the insulating column and the accelerating tube are described for various breakdown positions. The method uses a number of inverted-L network sections to represent the machine assuming that the tube is coupled to the column. Various forms of coupling are examined. The calculations use an iterative computer program which calculates the voltages and currents in the networks at successive small time intervals. (author)

Mason’s equation application for prediction of voltage of oil shale treeing breakdown

Science.gov (United States)

Martemyanov, S. M.

2017-05-01

The application of the formula, which is used to calculate the maximum field at the tip of the pin-plane electrode system was proposed to describe the process of electrical treeing and treeing breakdown in an oil shale. An analytical expression for the calculation of the treeing breakdown voltage in the oil shale, as a function of the inter-electrode distance, was taken. A high accuracy of the correspondence of the model to the experimental data in the range of inter-electrode distances from 0.03 to 0.5 m was taken.

Maximized Effective Energy Output of Contact-Separation-Triggered Triboelectric Nanogenerators as Limited by Air Breakdown

KAUST Repository

Zi, Yunlong; Wu, Changsheng; Ding, Wenbo; Wang, Zhong Lin

2017-01-01

Recent progress in triboelectric nanogenerators (TENGs) has demonstrated their promising potential as a high-efficiency mechanical energy harvesting technology, and plenty of effort has been devoted to improving the power output by maximizing the triboelectric surface charge density. However, due to high-voltage air breakdown, most of the enhanced surface charge density brought by material/surface optimization or external ion injection is not retainable or usable for electricity generation during the operation of contact-separation-triggered TENGs. Here, the existence of the air breakdown effect in a contact-separation mode TENG with a low threshold surface charge density of ≈40–50 µC m−2 is first validated under the high impedance external load, and then followed by the theoretical study of the maximized effective energy output as limited by air breakdown for contact-separation-triggered TENGs. The effects of air pressure and gas composition are also studied and propose promising solutions for reducing the air breakdown effect. This research provides a crucial fundamental study for TENG technology and its further development and applications.

Maximized Effective Energy Output of Contact-Separation-Triggered Triboelectric Nanogenerators as Limited by Air Breakdown

KAUST Repository

Zi, Yunlong

2017-05-02

Recent progress in triboelectric nanogenerators (TENGs) has demonstrated their promising potential as a high-efficiency mechanical energy harvesting technology, and plenty of effort has been devoted to improving the power output by maximizing the triboelectric surface charge density. However, due to high-voltage air breakdown, most of the enhanced surface charge density brought by material/surface optimization or external ion injection is not retainable or usable for electricity generation during the operation of contact-separation-triggered TENGs. Here, the existence of the air breakdown effect in a contact-separation mode TENG with a low threshold surface charge density of ≈40–50 µC m−2 is first validated under the high impedance external load, and then followed by the theoretical study of the maximized effective energy output as limited by air breakdown for contact-separation-triggered TENGs. The effects of air pressure and gas composition are also studied and propose promising solutions for reducing the air breakdown effect. This research provides a crucial fundamental study for TENG technology and its further development and applications.

A new protection system against high voltage vacuum breakdowns developed for the Tore Supra neutral beam injector prototype

International Nuclear Information System (INIS)

Fumelli, M.; Jequier, F.; Pamela, J.

1988-01-01

A passive protection system against high voltage vacuum breakdowns has been developed. This system is based on the principle of oscillatory discharges in an RLC circuit coupled with the use of a diode. It allows the interruption of a vacuum breakdown in a few milliseconds. This study has been made for protecting some parts of the neutral beam injectors of the Tore Supra Tokamak experiment, but its field of application should be quite large. The conception of the whole high voltage electrical circuit developed for the Tore Supra injector prototype experiments is also presented

Investigation of High Voltage Breakdown and Arc Localization in RF Structures

International Nuclear Information System (INIS)

Bigelow, T.S.; Goulding, R.H.; Swain, D.W.

1999-01-01

An effort is underway to improve the voltage standoff capabilities of ion cyclotron range of frequencies (ICRF) heating and current drive systems. One approach is to develop techniques for determining the location of an electrical breakdown (arc) when it occurs. A technique is described which uses a measurement of the reflection coefficient of a swept frequency signal to determine the arc location. The technique has several advantages including a requirement for only a small number of sensors and very simple data interpretation. In addition a test stand is described which will be used for studies of rf arc behavior. The device uses a quarter-wave resonator to produce voltages to 90 kV in the frequency range of 55-80 MHz

Design of High Voltage Electrical Breakdown Strength measuring system at 1.8K with a G-M cryocooler

Science.gov (United States)

Li, Jian; Huang, Rongjin; Li, Xu; Xu, Dong; Liu, Huiming; Li, Laifeng

2017-09-01

Impregnating resins as electrical insulation materials for use in ITER magnets and feeder system are required to be radiation stable, good mechanical performance and high voltage electrical breakdown strength. In present ITER project, the breakdown strength need over 30 kV/mm, for future DEMO reactor, it will be greater than this value. In order to develop good property insulation materials to satisfy the requirements of future fusion reactor, high voltage breakdown strength measurement system at low temperature is necessary. In this paper, we will introduce our work on the design of this system. This measuring system has two parts: one is an electrical supply system which provides the high voltage from a high voltage power between two electrodes; the other is a cooling system which consists of a G-M cryocooler, a superfluid chamber and a heat switch. The two stage G-M cryocooler pre-cool down the system to 4K, the superfluid helium pot is used for a container to depress the helium to superfluid helium which cool down the sample to 1.8K and a mechanical heat switch connect or disconnect the cryocooler and the pot. In order to provide the sufficient time for the test, the cooling system is designed to keep the sample at 1.8K for 300 seconds.

Electric properties and carrier multiplication in breakdown sites in multi-crystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Schneemann, Matthias; Carius, Reinhard; Rau, Uwe [IEK5-Photovoltaics, Forschungszentrum Jülich, Jülich 52425 (Germany); Kirchartz, Thomas, E-mail: t.kirchartz@fz-juelich.de [IEK5-Photovoltaics, Forschungszentrum Jülich, Jülich 52425 (Germany); Faculty of Engineering and CENIDE, University of Duisburg-Essen, Carl-Benz-Str. 199, Duisburg 47057 (Germany)

2015-05-28

This paper studies the effective electrical size and carrier multiplication of breakdown sites in multi-crystalline silicon solar cells. The local series resistance limits the current of each breakdown site and is thereby linearizing the current-voltage characteristic. This fact allows the estimation of the effective electrical diameters to be as low as 100 nm. Using a laser beam induced current (LBIC) measurement with a high spatial resolution, we find carrier multiplication factors on the order of 30 (Zener-type breakdown) and 100 (avalanche breakdown) as new lower limits. Hence, we prove that also the so-called Zener-type breakdown is followed by avalanche multiplication. We explain that previous measurements of the carrier multiplication using thermography yield results higher than unity, only if the spatial defect density is high enough, and the illumination intensity is lower than what was used for the LBIC method. The individual series resistances of the breakdown sites limit the current through these breakdown sites. Therefore, the measured multiplication factors depend on the applied voltage as well as on the injected photocurrent. Both dependencies are successfully simulated using a series-resistance-limited diode model.

Increasing break-down strength of the support colomn of high-voltage accelerators

International Nuclear Information System (INIS)

Rezvykh, K.A.; Romanov, V.A.

1981-01-01

Calculation results of strength of electric field of the EG-2.5 electrostatic accelerator for the support colomn with electrodes of circular and elliptical transverse cross sections are presented. Conducted is the choice of constructing the column under the condition that the dimensions of the tank, high-voltage electrode, step between the sections and internal diameter of the colomn electrodes are not changed. The potential at the high-voltage electrode equals 2.5 MV while the average longitudinal gradient of the colomn field equals 1.25 MV/m. The support insulation colomn of the high-voltage accelerator screened by rings with transverse cross section in the form of orientation oval in some accelerators promotes obtaining higher operating voltage and at the same time increase of operation reliability at the rest unchanged dimensions of the plant because the probability of break-down between the support colomn and the tank wall decreases. The latter is especially significant for most high-energy accelerators as well as for accelerators used in national economy [ru

Determining the mode of high voltage breakdowns in vacuum devices

International Nuclear Information System (INIS)

Miller, H.C.; Furno, E.J.; Sturtz, J.P.

1980-01-01

High voltage breakdowns (HVBs) occur in many vacuum devices. It frequently is of great practical interest to know the type (or mode) of such HVB's, since this can indicate weak points in the device. Post-mortems can sometimes be helpful, but it would be quite desirable to have a technique which would allow the HVB mode to be determined in an operating device. Photography can be quite helpful, but unfortunately many devices do not permit optical access to the region of interest. However, the idea of using photography in conjunction with other diagnostic techniques to establish the validity of these techniques seemed promising, since these techniques could then be used to determine the mode of HVBs in opaque devices. A literature search indicates that promising techniques are to measure the voltage applied to the device (or the current through the device) and also to look for x-rays generated by the device during an HVB

Breakdown Voltage of CF3CHCl2 gas an Alternative to SF6 Gas using HV Test and Bonding Energy Methods

Science.gov (United States)

Juliandhy, Tedy; Haryono, T.; Suharyanto; Perdana, Indra

2018-04-01

For more than two decades of Sulphur Hexafluoride (SF6) gases is used as a gas insulation in high voltage equipment especially in substations. In addition to getting an advantage as an insulating gas. SF6 gas is recognized as one of the greenhouse effect gases that cause global warming. Under the Kyoto Protocol, SF6 gas is one of those gases whose use is restricted and gradually reduced to the presence of a replacement gas for SF6 gas. One of the alternative gas alternatives which have the potential of replacing SF6 gas as an insulating gas in Gas Insulated Switchgear (GIS) equipment in the substation is Dichlorotrifluoroethane (CF3CHCl2) gas. The purpose of this paper is to enable a comparison of breakdown voltage with high voltage test and method of calculating Bonding energy to Dichlorotrifluoroethane gas as substitute gas for SF6 gas. At 0.1 bar gas pressure obtained an average breakdown voltage of 18.68 kV / mm at 25oC chamber temperature and has the highest breakdown voltage at 50oC with a breakdown voltage of 19.56 kV / mm. The CF3CHCl2 gas has great potential as an insulating gas because it has more insulation ability high of SF6 gas, and is part of the gas recommended under the Kyoto Protocol. Gas CF3CHCl2 has the capacity to double the value of electronegativity greater than SF6 gas as a major requirement of gas isolation and has a value of Global Warming Potential (GWP) and Ozone Depleting lower than from SF6 gas.

Water surface deformation in strong electrical fields and its influence on electrical breakdown in a metal pin-water electrode system

International Nuclear Information System (INIS)

Bruggeman, Peter; Graham, Leigh; Groote, Joris de; Vierendeels, Jan; Leys, Christophe

2007-01-01

Electrical breakdown and water surface deformation in a metal pin-water electrode system with dc applied voltages is studied for small inter-electrode distances (2-12 mm). The radius of curvature of the metal pin is 0.5 cm to exclude corona before breakdown at these small inter-electrode spacings. Calculations of the water surface deformation as a function of the applied voltage and initial inter-electrode spacing are compared with measurements of the water elevation. For distances smaller than 7 mm the calculated stability limit of the water surface corresponds with the experimentally obtained breakdown voltage. It is proved with fast CCD images and calculations of the electrical field distribution that the water surface instability triggers the electrical breakdown in this case. The images show that at breakdown the water surface has a Taylor cone-like shape. At inter-electrode distance of 7 mm and larger the breakdown voltage is well below the water stability limit and the conductive channel at breakdown is formed between the pin electrode and the static water surface. Both cases are discussed and compared

Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

Science.gov (United States)

Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

2016-12-01

Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

International Nuclear Information System (INIS)

Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

2012-01-01

We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two-dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (∼100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (∼50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate—drain distance of 1 μm. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz. (semiconductor devices)

50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

KAUST Repository

Emira, Ahmed

2012-10-06

In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

KAUST Repository

Emira, Ahmed; AbdelGhany, M.; Elsayed, M.; Elshurafa, Amro M.; Sedky, S.; Salama, Khaled N.

2012-01-01

In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

Voltage-stabilised elastomers with increased relative permittivity and high electrical breakdown strength by means of phase separating binary copolymer blends of silicone elastomers

DEFF Research Database (Denmark)

A Razak, Aliff Hisyam; Yu, Liyun; Skov, Anne Ladegaard

2017-01-01

Increased electrical breakdown strength and increased dielectric permittivity of silicone-based dielectric elastomers are achieved by means of the addition of so-called voltage-stabilisers prepared from PDMS–PPMS copolymers as well as PDMS–PEG copolymers in order to compensate for the negative...... effect of softness on electrical stability of silicone elastomers. The voltage-stabilised elastomer, incorporating a high-permittivity PDMS–PEG copolymer, possesses increased relative permittivity, high electrical breakdown strength, excellent network integrity and low dielectric loss and paves the way...

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

Science.gov (United States)

Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

2014-01-01

In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

Effect of RF Parameters on Breakdown Limits in High-Vacuum X-Band Structures

International Nuclear Information System (INIS)

Dolgashev, Valery A.

2003-01-01

RF breakdown is one of the major factors determining performance of high power rf components and rf sources. RF breakdown limits working power and produces irreversible surface damage. The breakdown limit depends on the rf circuit, structure geometry, and rf frequency. It is also a function of the input power, pulse width, and surface electric and magnetic fields. In this paper we discuss multi-megawatt operation of X-band rf structures at pulse width on the order of one microsecond. These structures are used in rf systems of high gradient accelerators. Recent experiments at Stanford Linear Accelerator Center (SLAC) have explored the functional dependence of breakdown limit on input power and pulse width. The experimental data covered accelerating structures and waveguides. Another breakdown limit of accelerating structures was associated with high magnetic fields found in waveguide-to-structure couplers. To understand and quantify these limits we simulated 3D structures with the electrodynamics code Ansoft HFSS and the Particle-In-Cell code MAGIC3D. Results of these simulations together with experimental data will be discussed in this paper

Experimental Study on Breakdown Characteristics of Transformer Oil Influenced by Bubbles

Directory of Open Access Journals (Sweden)

Chunxu Qin

2018-03-01

Full Text Available Bubbles will reduce the electric strength of transformer oil, and even result in the breakdown of the insulation. This paper has studied the breakdown voltages of transformer oil and oil-impregnated pressboard under alternating current (AC and direct current (DC voltages. In this paper, three types of electrodes were applied: cylinder-plan electrodes, sphere-plan electrodes, and cone-plan electrodes, and the breakdown voltages were measured in both no bubbles and bubbles. The sphere-sphere electrodes were used to study the breakdown voltage of the oil-impregnated pressboard. The results showed that under the influence of bubble, the breakdown voltage of the cylinder-plan electrode dropped the most, and the breakdown voltage of the cone-plan electrode dropped the least. The bubbles motion was the key factor of the breakdown. The discharge types of the oil-impregnated pressboard were different with bubbles, and under DC, the main discharge type was flashover along the oil-impregnated pressboard, while under AC, the main discharge type was breakdown through the oil-impregnated pressboard.

Improving breakdown voltage performance of SOI power device with folded drift region

Science.gov (United States)

Qi, Li; Hai-Ou, Li; Ping-Jiang, Huang; Gong-Li, Xiao; Nian-Jiong, Yang

2016-07-01

A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. Project supported by the Guangxi Natural Science Foundation of China (Grant Nos. 2013GXNSFAA019335 and 2015GXNSFAA139300), Guangxi Experiment Center of Information Science of China (Grant No. YB1406), Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing of China, Key Laboratory of Cognitive Radio and Information Processing (Grant No. GXKL061505), Guangxi Key Laboratory of Automobile Components and Vehicle Technology of China (Grant No. 2014KFMS04), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

Breakdown properties of irradiated MOS capacitors

International Nuclear Information System (INIS)

Paccagnella, A.; Candelori, A.; Pellizzer, F.; Fuochi, P.G.; Lavale, M.

1996-01-01

The authors have studied the effects of ionizing and non-ionizing radiation on the breakdown properties of different types of MOS capacitors, with thick (200 nm) and thin (down to 8 nm) oxides. In general, no large variations of the average breakdown field, time-to-breakdown at constant voltage, or charge-to-breakdown at constant voltage, or charge-to-breakdown values have been observed after high dose irradiation (20 Mrad(Si) 9 MeV electrons on thin and thick oxides, 17(Si) Mrad Co 60 gamma and 10 14 neutrons/cm 2 only on thick oxides). However, some modifications of the cumulative failure distributions have been observed in few of the oxides tested

Studies of radiation blistering effects on voltage holding

International Nuclear Information System (INIS)

Miley, G.H.

1975-01-01

The surfaces of niobium and tungsten wires were blistered by 300-keV helium-ion irradiation and then tested for voltage holding. A cylindrical projection-tube technique was employed so that regions of strong electron emission could be observed and later examined with a scanning electron microscope (SEM). Blistering was found to cause significant increases in pre-breakdown currents. However, these currents tend to saturate over a region corresponding to around 200-400 kV/cm surface field such that the ultimate voltage breakdown limit is not seriously reduced. Emission image observations and SEM photographs suggest that, in many cases, parts of the blistered surface are gradually erected by the strong surface fields, but this may not occur until after several arc breakdowns. SEM photographs also indicate that vapor from the anode may play an important part in the breakdown mechanism. Implications of these results to the design of devices important to fusion development, such as direct collectors and ion sources, are briefly discussed. The importance of future in situ irradiation-voltage experiments is also stressed. (U.S.)

Studies on gas breakdown in pulsed radio frequency atmospheric pressure glow discharges

International Nuclear Information System (INIS)

Huo, W. G.; Jian, S. J.; Yao, J.; Ding, Z. F.

2014-01-01

In pulsed RF atmospheric pressure glow discharges, the gas breakdown judged by the rapid drop in the amplitude of the pulsed RF voltage is no longer universally true. The steep increment of the plasma-absorbed RF power is proposed to determine the gas breakdown. The averaged plasma-absorbed RF power over a pulse period is used to evaluate effects of the preceding pulsed RF discharge on the breakdown voltage of the following one, finding that the breakdown voltage decreases with the increment in the averaged plasma-absorbed RF power under constant pulse duty ratio. Effects of the pulse off-time on the breakdown voltage and the breakdown delay time are also studied. The obtained dependence of the breakdown voltage on the pulse off-time is indicative of the transitional plasma diffusion processes in the afterglow. The breakdown voltage varies rapidly as the plasma diffuses fast in the region of moderate pulse off-time. The contribution of nitrogen atom recombination at the alumina surface is demonstrated in the prolonged memory effect on the breakdown delay time vs. the pulse off-time and experimentally validated by introducing a trace amount of nitrogen into argon at short and long pulse off-times

Analysis of low-pressure dc breakdown in nitrogen between two spherical iron electrodes

International Nuclear Information System (INIS)

Pejovic, Momcilo M.; Nesic, Nikola T.; Pejovic, Milic M.

2006-01-01

The influence of afterglow period τ, voltage increase rate k, and electrode gap d on breakdown voltage U b for a nitrogen-filled tube with spherical electrodes of diameter D>>d and p=6.5 mbar has been investigated. The data for the breakdown voltage were obtained for the case when there is a presence of N( 4 S) atoms, which release secondary electrons via recombination on the cathode. By fitting the experimental data of breakdown voltage mean values as a function of the voltage increase rate, the static breakdown voltages for afterglow periods of 15 and 100 s were estimated. The electrical field as a function of the electrode gap using breakdown voltage mean values was also determined. It is shown that experimental results of the breakdown voltage mean value as a function of pd in the interval of d from 0.82 to 1.62 mm can be very well described with Paschen's law, valid for the case of parallel-plate electrodes

Factors that Influence RF Breakdown in Antenna Systems

Science.gov (United States)

Caughman, J. B. O.; Baity, F. W.; Rasmussen, D. A.; Aghazarian, M.; Castano Giraldo, C. H.; Ruzic, David

2007-11-01

One of the main power-limiting factors in antenna systems is the maximum voltage that the antenna or vacuum transmission line can sustain before breaking down. The factors that influence RF breakdown are being studied in a resonant 1/4-wavelength section of vacuum transmission line terminated with an open circuit electrode structure. Breakdown can be initiated via electron emission by high electric fields and by plasma formation in the structure, depending on the gas pressure. Recent experiments have shown that a 1 kG magnetic field can influence plasma formation at pressures as low as 8x10-5 Torr at moderate voltage levels (LLC, for the U.S. Dept. of Energy under contract DE-AC05-00OR22725. Work supported by USDOE with grant DE-FG02-04ER54765

Cable Insulation Breakdowns in the Modulator with a Switch Mode High Voltage Power Supply

CERN Document Server

Cours, A

2004-01-01

The Advanced Photon Source modulators are PFN-type pulsers with 40 kV switch mode charging power supplies (PSs). The PS and the PFN are connected to each other by 18 feet of high-voltage (HV) cable. Another HV cable connects two separate parts of the PFN. The cables are standard 75 kV x-ray cables. All four cable connectors were designed by the PS manufacturer. Both cables were operating at the same voltage level (about 35 kV). The PS’s output connector has never failed during five years of operation. One of the other three connectors failed approximately five times more often than the others. In order to resolve the failure problem, a transient analysis was performed for all connectors. It was found that transient voltage in the connector that failed most often was subjected to more high-frequency, high-amplitude AC components than the other three connectors. It was thought that these components caused partial discharge in the connector insulation and led to the insulation breakdown. Modification o...

Impulse breakdown of liquids

CERN Document Server

Ushakov, Vasily Y

2007-01-01

The book describes the main physical processes and phenomena in pulsed electric breakdown. The knowledge and the control of the electric breakdown of liquids is important not only for the insulation inside power systems but it is also used for the creation and information of high voltage and high current pulses. Such high-voltage micro- and nanosecond pulses find wide application in experimental physics, electro discharge technology, physics of dielectrics, radar detection and ranging, high-speed photography. The nature of charge carriers, mechanism of formation and evolution of the gas phase,

Improving breakdown voltage and self-heating effect for SiC LDMOS with double L-shaped buried oxide layers

Science.gov (United States)

Bao, Meng-tian; Wang, Ying

2017-02-01

In this paper, a SiC LDMOS with double L-shaped buried oxide layers (DL-SiC LDMOS) is investigated and simulated. The DL-SiC LDMOS consists of two L-shaped buried oxide layers and two SiC windows. Using 2-D numerical simulation software, Atlas, Silvaco TCAD, the breakdown voltage, and the self-heating effect are discussed. The double-L shaped buried oxide layers and SiC windows in the active area can introduce an additional electric field peak and make the electric field distribution more uniform in the drift region. In addition, the SiC windows, which connect the active area to the substrate, can facilitate heat dissipation and reduce the maximum lattice temperature of the device. Compared with the BODS structure, the DL-SiC LDMOS and BODS structures have the same device parameters, except of the buried oxide layers. The simulation results of DL-SiC LDMOS exhibits outstanding characteristics including an increase of the breakdown voltage by 32.6% to 1220 V, and a low maximum lattice temperature (535 K) at room temperature.

Electrical breakdown studies with Mycalex insulators

International Nuclear Information System (INIS)

Waldron, W.; Greenway, W.; Eylon, S.; Henestroza, E.; Yu, S.

2003-01-01

Insulating materials such as alumina and glass-bonded mica (Mycalex) are used in accelerator systems for high voltage feedthroughs, structural supports, and barriers between high voltage insulating oil and the vacuum beam pipe in induction accelerator cells. Electric fields in the triple points should be minimized to prevent voltage breakdown. Mechanical stress can compromise seals and result in oil contamination of the insulator surface. We have tested various insulator cleaning procedures including ultrasonic cleaning with a variety of aqueous-based detergents, and manual scrubbing with various detergents. Water sheeting tests were used to determine the initial results of the cleaning methods. Ultimately, voltage breakdown tests will be used to quantify the benefits of these cleaning procedures

Low-pressure gas breakdown in longitudinal combined electric fields

International Nuclear Information System (INIS)

Lisovskiy, V A; Kharchenko, N D; Yegorenkov, V D

2010-01-01

This paper contains the complete experimental and analytical picture of gas breakdown in combined electric fields for arbitrary values of rf and dc fields. To obtain it, we continued the study of the discharge ignition modes in nitrogen with simultaneous application of dc and rf electric fields presented in Lisovskiy et al (2008 J. Phys. D: Appl. Phys. 41 125207). To this end, we studied the effect of rf voltage on dc discharge ignition. When we applied an rf voltage exceeding the one corresponding to the minimum breakdown voltage of a self-sustained rf discharge, the curve of dependence of the dc breakdown voltage of a combined discharge on gas pressure was found to consist of two sections. We got the generalized gas breakdown criterion in the combined field valid for arbitrary values of rf and dc electric fields. The calculation results agree with experimental data satisfactorily.

Pre-breakdown phenomena and discharges in a gas-liquid system

Science.gov (United States)

Tereshonok, D. V.; Babaeva, N. Yu; Naidis, G. V.; Panov, V. A.; Smirnov, B. M.; Son, E. E.

2018-04-01

In this paper, we investigate pre-breakdown and breakdown phenomena in gas-liquid systems. Cavitation void formation and breakdown in bubbles immersed in liquids are studied numerically, while complete breakdown of bubbled water is studied in experiments. It is shown that taking into account the dependence of water dielectric constant on electric field strength plays the same important role for cavitation void appearance under the action of electrostriction forces as the voltage rise time. It is also shown that the initial stage of breakdown in deformed bubbles immersed in liquid strongly depends on spatial orientation of the bubbles relative to the external electric field. The effect of immersed microbubbles, distributed in bulk water, on breakdown time and voltage is studied experimentally. At the breakdown voltage, the slow ‘thermal’ mechanism is changed by the fast ‘streamer-leader’ showing a decrease in breakdown time by two orders of magnitude by introducing microbubbles (0.1% of volumetric gas content) into the water. In addition, the plasma channel is found to pass between nearby microbubbles, exhibiting some ‘guidance’ effect.

Effect of High Solenoidal Magnetic Fields on Breakdown Voltages of High Vacuum 805 MHz Cavities

CERN Document Server

Moretti, A; Geer, S; Qian, Z

2004-01-01

The demonstration of muon ionization cooling by a large factor is necessary to demonstrate the feasilibility of a collider or neutrino factory. An important cooling experiment, MICE [1], has been proposed to demonstrate 10 % cooling which will validate the technology. Ionization cooling is accomplished by passing a high-emittance beam in a multi-Tesla solenoidal channel alternately through regions of low Z material and very high accelerating RF Cavities. To determine the effect of very large solenoidal magnetic fields on the generations of Dark current, X-Rays and breakdown Voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station, and a large bore 5 T solenoidal superconducting magnet containing a pill box type Cavity with thin removable window apertures allowing dark current studies and breakdown studies of different materials. The results of this study will be presented. The study has shown that the peak achievab...

A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

Science.gov (United States)

Jamali Mahabadi, S. E.; Rajabi, Saba; Loiacono, Julian

2015-09-01

In this paper a partial silicon on insulator (PSOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) with periodic buried oxide layer (PBO) for enhancing breakdown voltage (BV) and self-heating effects (SHEs) is proposed for the first time. This new structure is called periodic buried oxide partial silicon on insulator (PBO-PSOI). In this structure, periodic small pieces of SiO2 were used as the buried oxide (BOX) layer in PSOI to modulate the electric field in the structure. It was demonstrated that the electric field is distributed more evenly by producing additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the PBO-PSOI structure. Hence, the area underneath the electric field curve increases which leads to higher breakdown voltage. Also a p-type Si window was introduced in the source side to force the substrate to share the vertical voltage drop, leading to a higher vertical BV. Furthermore, the Si window under the source and those between periodic pieces of SiO2 create parallel conduction paths between the active layer and substrate thereby alleviating the SHEs. Simulations with the two dimensional ATLAS device simulator from the Silvaco suite of simulation tools show that the BV of PBO-PSOI is 100% higher than that of the conventional partial SOI (C-PSOI) structure. Furthermore the PBO-PSOI structure alleviates SHEs to a greater extent than its C-PSOI counterpart. The achieved drain current for the PBO-PSOI structure (100 μA), at drain-source voltage of VDS = 100 V and gate-source voltage of VGS = 25 V, is shown to be significantly larger than that in C-PSOI and fully depleted SOI (FD-SOI) structures (87 μA and 51 μA respectively). Drain current can be further improved at the expense of BV by increasing the doping of the drift region.

Criteria for vacuum breakdown in rf cavities

International Nuclear Information System (INIS)

Peter, W.; Faehl, R.J.; Kadish, A.; Thode, L.E.

1983-01-01

A new high-voltage scaling based on Kilpatrick's criterion is presented that suggests that voltages more than twice the Kilpatrick limit can be obtained with identical initial conditions of vacuum and surface cleanliness. The calculations are based on the experimentally observed decrease in secondary electron emission with increasing ion-impact energy above 100 keV. A generalized secondary-emission package has been developed to simulate actual cavity dynamics in conjunction with our 2 1/2-dimensional fully electromagnetic particle-in-cell code CEMIT. The results are discussed with application to the suppression of vacuum breakdown in rf accelerator devices

Abnormal breakdown characteristic in a two-phase mixture

International Nuclear Information System (INIS)

Ye Qizheng; Li Jin; Lu Fei

2006-01-01

A two-phase mixture (TPM) is a mixture of gas and macroparticles of high concentration. Based on Townsend's theory, a new cell-iterative model in analytical form for the breakdown mechanism in TPM is presented. Compared with the original cell-iterative model in our previous paper, the obstructive factor of the macroparticles that influences the electron avalanche propagation is considered, except for the macroparticles distorting the electrical field and capture of the electrons. The cell attractive parameter k is presented according to the classical continuum theory for field charging. The modified Paschen law for a TPM is presented to calculate the breakdown voltage. The breakdown voltage of the TPM, U TPM , increases gradually with an increase in the macroparticle number density (m). The voltage U TPM is lower than that of the pure gas at low m values and larger at high m values. With a decrease of the macroparticle volume fraction and the dielectric mismatch, the voltage U TPM increases gradually at low m values and decreases gradually at high m values. The voltage U TPM at pd 200 cm Torr is lower than that at pd = 760 cm Torr for low m values and larger for high m values. This kind of abnormal breakdown characteristic in the TPM occurs in the case of high macroparticle volume fraction. On the other hand, the minimum of the TPM's Paschen curve increases with increase in m. It provides the possibility and the conditions of greatly increasing the breakdown voltage in a nearly uniform field

Abnormal breakdown characteristic in a two-phase mixture

Energy Technology Data Exchange (ETDEWEB)

Ye Qizheng; Li Jin; Lu Fei [College of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, 430074 (China)

2006-05-21

A two-phase mixture (TPM) is a mixture of gas and macroparticles of high concentration. Based on Townsend's theory, a new cell-iterative model in analytical form for the breakdown mechanism in TPM is presented. Compared with the original cell-iterative model in our previous paper, the obstructive factor of the macroparticles that influences the electron avalanche propagation is considered, except for the macroparticles distorting the electrical field and capture of the electrons. The cell attractive parameter k is presented according to the classical continuum theory for field charging. The modified Paschen law for a TPM is presented to calculate the breakdown voltage. The breakdown voltage of the TPM, U{sub TPM}, increases gradually with an increase in the macroparticle number density (m). The voltage U{sub TPM} is lower than that of the pure gas at low m values and larger at high m values. With a decrease of the macroparticle volume fraction and the dielectric mismatch, the voltage U{sub TPM} increases gradually at low m values and decreases gradually at high m values. The voltage U{sub TPM} at pd 200 cm Torr is lower than that at pd = 760 cm Torr for low m values and larger for high m values. This kind of abnormal breakdown characteristic in the TPM occurs in the case of high macroparticle volume fraction. On the other hand, the minimum of the TPM's Paschen curve increases with increase in m. It provides the possibility and the conditions of greatly increasing the breakdown voltage in a nearly uniform field.

Electrical strength of vacuum gap at repetitive breakdown

International Nuclear Information System (INIS)

Dubinin, N.P.; Chistyakov, N.P.

1983-01-01

The investigation of repetitive pulse breakdown of vacuum space, which electrodes have been subjected to various treatment in vacuum and inert gas, is carried out. In case of electrode warm-up in vacuum up to 400 deg C as well as electronic heating up to 900 deg C the voltage in case of repetitive breakdown hasncreased approximately twice and in case of a through treatment, which is accomplished by a high-current glow discharge in inert gas, the maximum high voltage in case of the first breakdown at repetitive breakdown has decreased by 30...40%, remaining 2-3 times higher than in the first case

Breakdown of highly excited oxygen in a DC electric field

International Nuclear Information System (INIS)

Vagin, N.P.; Ionin, A.A.; Klimachev, Yu.M.; Sinitsin, D.V.; Yuryshev, N.N.; Deryugin, A.A.; Kochetov, I.V.; Napartovich, A.P.

2000-01-01

The breakdown of oxygen in a dc electric field is studied. A high concentration of oxygen molecules in the a 1 Δ g excited state is obtained in a purely chemical reactor. A decrease in the breakdown voltage at degrees of excitation exceeding 50% is observed. The theoretical decrement in the breakdown voltage obtained by solving the Boltzmann equation is in good agreement with the experimental data

Ionizing potential waves and high-voltage breakdown streamers.

Science.gov (United States)

Albright, N. W.; Tidman, D. A.

1972-01-01

The structure of ionizing potential waves driven by a strong electric field in a dense gas is discussed. Negative breakdown waves are found to propagate with a velocity proportional to the electric field normal to the wavefront. This causes a curved ionizing potential wavefront to focus down into a filamentary structure, and may provide the reason why breakdown in dense gases propagates in the form of a narrow leader streamer instead of a broad wavefront.

Gas Breakdown of Radio Frequency Glow Discharges in Helium at near Atmospheric Pressure

International Nuclear Information System (INIS)

Liu Xinkun; Xu Jinzhou; Cui Tongfei; Guo Ying; Zhang Jing; Shi Jianjun

2013-01-01

A one-dimensional self-consistent fluid model was developed for radio frequency glow discharge in helium at near atmospheric pressure, and was employed to study the gas breakdown characteristics in terms of breakdown voltage. The effective secondary electron emission coefficient and the effective electric field for ions were demonstrated to be important for determining the breakdown voltage of radio frequency glow discharge at near atmospheric pressure. The constant of A was estimated to be 64±4 cm −1 Torr −1 , which was proportional to the first Townsend coefficient and could be employed to evaluate the gas breakdown voltage. The reduction in the breakdown voltage of radio frequency glow discharge with excitation frequency was studied and attributed to the electron trapping effect in the discharge gap

Shootthrough fault protection system for bipolar transistors in a voltage source transistor inverter

International Nuclear Information System (INIS)

Wirth, W.F.

1982-01-01

Faulted bipolar transistors in a voltage source transistor inverter are protected against shootthrough fault current, from the filter capacitor of the d-c voltage source which drives the inverter over the d-c bus, by interposing a small choke in series with the filter capacitor to limit the rate of rise of that fault current while at the same time causing the d-c bus voltage to instantly drop to essentially zero volts at the beginning of a shootthrough fault. In this way, the load lines of the faulted transistors are effectively shaped so that they do not enter the second breakdown area, thereby preventing second breakdown destruction of the transistors

Technological Aspects: High Voltage

CERN Document Server

Faircloth, D.C.

2013-12-16

This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

Pressure and gap length dependence of gap breakdown voltage and discharge current of discharge-pumped KrF excimer laser. Hoden reiki KrF laser no zetsuen hakai den prime atsu to reiki denryu no atsuryoku, gap cho izon sei

Energy Technology Data Exchange (ETDEWEB)

Yukimura, K.; Kawakami, H. (Doshisha Univ., Tokyo (Japan)); Hitomi, K. (Kyoto Polytechnic College, Kyoto (Japan))

1991-04-20

On the gap destruction characteristics of UV-preionized discharge-pumped KrF excimer laser (charge transfer type) and the electric characteristics of the excited discharge, studies were made by changing the pressure (1.5-3 atm) and the discharge gap length (14-21 mm) of the discharge medium. (1) Gap breakdown voltage and the maximum current of the excited discharge give a similarity by a product of pressure and the gap length at the charge volatge. (2) Insulation breakdown of the gap occurs at the wave front of the applied voltage and the breakdown time gets delayed by the decreasing voltage applied. By setting the ionization index at constant value 20, the gap breakdown voltage is estimated at the error within 10%. (3) The relation between the maximum current, pressure and the gap length product changes the characteristics by the charge voltage of the primary condenser. With the result combined with the standardization of voltage/current of the excited discharge, the electric characteristics at the specific pressure and gap length can be readily known. 10 refs., 10 figs.

Technological Aspects: High Voltage

International Nuclear Information System (INIS)

Faircloth, D C

2013-01-01

This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered. (author)

On correction factor in scaling law for low pressure DC gas breakdown

International Nuclear Information System (INIS)

Gleb Wataghin, UNICAMP, Campinas, SP (Brazil))" data-affiliation=" (Instituto de Física Gleb Wataghin, UNICAMP, Campinas, SP (Brazil))" >Ronchi, G; Gleb Wataghin, UNICAMP, Campinas, SP (Brazil))" data-affiliation=" (Instituto de Física Gleb Wataghin, UNICAMP, Campinas, SP (Brazil))" >Machida, M

2014-01-01

The low pressure gas breakdown described by Paschen's law in Townsend theory, i.e. the breakdown voltage as a function of gas pressure p and the electrode distance d, provides an accurate description of breakdown in DC discharges when the ratio between inter-electrode gap distance d and electrode radii R tends to zero. On increasing of the ratio d/R, the Paschen's curves are shifted to the region of higher breakdown voltage and higher pd values. A modified Paschen's law recently proposed is well satisfied in our measurements. However, the value of constant b changes not only due to gas type but also according to electrode gap distance; furthermore, gas breakdown voltages are considerably modified by plasma-wall interactions due to glass tube proximity in the discharge.

Enhancement of dielectric breakdown strengths in polymer film capacitors

International Nuclear Information System (INIS)

Binder, M.; Mammone, R.J.; Lavene, B.; Rondeau, E.

1992-01-01

This paper reports that breakdown voltages of wound, polymer film/metal foil capacitors have been dramatically increased by briefly exposing them (after they had been spirally wound) to a low pressure, low temperature gas plasma. Exposure of wound, polycarbonate-based capacitors to a 96%CF 4 /4%O 2 gas plasma for 4 minutes, for example, produced a 200% increase in breakdown voltage

Plasma breakdown in a capacitively-coupled radiofrequency argon discharge

Science.gov (United States)

Smith, H. B.; Charles, C.; Boswell, R. W.

1998-10-01

Low pressure, capacitively-coupled rf discharges are widely used in research and commercial ventures. Understanding of the non-equilibrium processes which occur in these discharges during breakdown is of interest, both for industrial applications and for a deeper understanding of fundamental plasma behaviour. The voltage required to breakdown the discharge V_brk has long been known to be a strong function of the product of the neutral gas pressure and the electrode seperation (pd). This paper investigates the dependence of V_brk on pd in rf systems using experimental, computational and analytic techniques. Experimental measurements of V_brk are made for pressures in the range 1 -- 500 mTorr and electrode separations of 2 -- 20 cm. A Paschen-style curve for breakdown in rf systems is developed which has the minimum breakdown voltage at a much smaller pd value, and breakdown voltages which are significantly lower overall, than for Paschen curves obtained from dc discharges. The differences between the two systems are explained using a simple analytic model. A Particle-in-Cell simulation is used to investigate a similar pd range and examine the effect of the secondary emission coefficient on the rf breakdown curve, particularly at low pd values. Analytic curves are fitted to both experimental and simulation results.

Instrumental Developments for In-situ Breakdown Experiments inside a Scanning Electron Microscope

CERN Document Server

Muranaka, T; Leifer, K; Ziemann, V

2011-01-01

Electrical discharges in accelerating structures are one of the key issues limiting the performance of future high energy accelerators such as the Compact Linear Collider (CLIC). Fundamental understanding of breakdown phenomena is an indispensable part of the CLIC feasibility study. The present work concerns the experimental study of breakdown using Scanning Electron Microscopes (SEMs). A SEM gives us the opportunity to achieve high electrical gradients of 1\\,kV/$\\mu$m which corresponds to 1\\,GV/m by exciting a probe needle with a high voltage power supply and controlling the positioning of the needle with a linear piezo motor. The gap between the needle tip and the surface is controlled with sub-micron precision. A second electron microscope equipped with a Focused Ion Beam (FIB) is used to create surface corrugations and to sharpen the probe needle to a tip radius of about 50\\,nm. Moreover it is used to prepare cross sections of a voltage breakdown area in order to study the geometrical surface damages as w...

Space charge inhibition effect of nano-Fe{sub 3}O{sub 4} on improvement of impulse breakdown voltage of transformer oil based on improved Kerr optic measurements

Energy Technology Data Exchange (ETDEWEB)

Yang, Qing, E-mail: yangqing@cqu.edu.cn; Yu, Fei; Sima, Wenxia [State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Shapingba District, Chongqing, 400044 (China); Zahn, Markus [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

2015-09-15

Transformer oil-based nanofluids (NFs) with 0.03 g/L Fe{sub 3}O{sub 4} nanoparticle content exhibit 11.2% higher positive impulse breakdown voltage levels than pure transformer oils. To study the effects of the Fe{sub 3}O{sub 4} nanoparticles on the space charge in transformer oil and to explain why the nano-modified transformer oil exhibits improved impulse breakdown voltage characteristics, the traditional Kerr electro-optic field mapping technique is improved by increasing the length of the parallel-plate electrodes and by using a photodetector array as a high light sensitivity device. The space charge distributions of pure transformer oil and of NFs containing Fe{sub 3}O{sub 4} nanoparticles can be measured using the improved Kerr electro-optic field mapping technique. Test results indicate a significant reduction in space charge density in the transformer oil-based NFs with the Fe{sub 3}O{sub 4} nanoparticles. The fast electrons are captured by the nanoparticles and are converted into slow-charged particles in the NFs, which then reduce the space charge density and result in a more uniform electric field distribution. Streamer propagation in the NFs is also obstructed, and the breakdown strengths of the NFs under impulse voltage conditions are also improved.

The validity of the general similarity law for electrical breakdown of gases

International Nuclear Information System (INIS)

Osmokrovic, Predrag; Zivic, Tamara; Loncar, Boris; Vasic, Aleksandra

2006-01-01

This paper investigates the validity of the similarity law in cases of dc and pulse breakdown of gases. Geometrically similar systems insulated with SF 6 gas were used during experiments. It is shown that the similarity law is valid for dc breakdown voltage if the electron mean free path is included in geometrical parameters of the system, but not for pulse breakdown voltages. The explanation for this is the mechanism of the pulse discharge. The similarity law was expanded to take into account mechanisms of pulse breakdown initiation. Thus, the general similarity law is obtained, the validity of which in case of a pulse breakdown is established experimentally

The breakdown and glow phases during the initiation of discharges for lamps

International Nuclear Information System (INIS)

Pitchford, L.C.; Peres, I.; Liland, K.B.; Boeuf, J.P.; Gielen, H.

1997-01-01

High intensity discharge (HID) lamps are often initiated by the application of one or more short, high-voltage, breakdown pulses superimposed on a 50 or 60 Hz generator voltage. A successful transition from the breakdown event to steady-state operating conditions in HID lamps requires that the lamp-circuit system be adequate to sustain the plasma created during breakdown until the electrodes are heated to thermionic temperatures. In this article, we use a one-dimensional (in the axial direction) transient discharge model to study the conditions needed to sustain the cold-cathode discharge after a breakdown event has occurred. While the application of our one-dimensional model to real lamps is approximate, we find that the model predictions are consistent with experimental results in HID lamps, a few of which are presented here. The main conclusion from this work is that, after breakdown, the voltage necessary to sustain a glow discharge is dependent on the source impedance, the gas composition, and on the plasma density created by the breakdown event. copyright 1997 American Institute of Physics

On the assessment of extremely low breakdown probabilities by an inverse sampling procedure [gaseous insulation

DEFF Research Database (Denmark)

Thyregod, Poul; Vibholm, Svend

1991-01-01

the flashover probability function and the corresponding distribution of first breakdown voltages under the inverse sampling procedure, and show how this relation may be utilized to assess the single-shot flashover probability corresponding to the observed average first breakdown voltage. Since the procedure......First breakdown voltages obtained under the inverse sampling procedure assuming a double exponential flashover probability function are discussed. An inverse sampling procedure commences the voltage application at a very low level, followed by applications at stepwise increased levels until...... is based on voltage applications in the neighbourhood of the quantile under investigation, the procedure is found to be insensitive to the underlying distributional assumptions...

High voltage switches having one or more floating conductor layers

Science.gov (United States)

Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

2015-11-24

This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

Dielectric breakdown in liquid helium

International Nuclear Information System (INIS)

Miller, F.L. Jr.

1975-01-01

The experimental apparatus consists of a 130 kV dc 80 kV ac intermediate voltage unit and a 600 kV dc 700 kV high voltage unit under construction. The experimental devices consist of an insulated container, or dewar, in which two electrodes are placed, one above the other. A voltage is built up in one electrode until an arc occurs to the other electrode. A typical set of breakdown data is shown. A mathematical analysis is briefly described. (MOW)

Impulse breakdown of small air gap in electric field Part I: Influence ...

African Journals Online (AJOL)

The influence of barrier position on breakdown voltage in air dielectric has been investigated. Needle and Cone positive point electrodes were used and the effects of electrode curvature on barrier position for maximum breakdown voltage were compared, with air gap for the point to plane electrode fixed at 10 cm for all the ...

Protections Against Grid Breakdowns in the ITER Neutral Beam Injector Power Supplies

International Nuclear Information System (INIS)

Bigi, M.; Toigo, V.; Zanotto, L.

2006-01-01

The ITER Neutral Beam Injector (NBI) is designed to deliver 16.5 MW of additional heating power to the plasma, accelerating negative ions up to -1 MV with a current up to 40 A. Two main power supplies are foreseen to feed the system: the Acceleration Grid Power Supply (AGPS), which provides power to the acceleration grids, and the Ion Source Power Supply (ISPS), devoted to supplying the ion source components. For the accelerator, two different concepts are under investigation: the MAMuG (Multiple Aperture, Multiple Gap) and the SINGAP (SINgle Aperture). During operation of the NBI, the breakdown of the acceleration grids will occur regularly; as a consequence the AGPS is expected to experience frequent load short-circuits during a pulse. For each grid breakdown, energy and current peaks are delivered from the power supply systems that could damage the grids, if not limited. In previous NBI, rated for a lower accelerating voltage, the protection system in case of grid breakdowns was based on dc circuit breakers able to quickly disconnect the power supply from the grids. In the ITER case, a similar solution is not feasible, as the voltage level is too high for present dc breaker technology. Therefore, the protection strategy has to rely on fast switch-off of the power supplies, on the optimisation of the filter elements and core snubbers placed downstream the AGPS and on the introduction of additional passive elements. However, achieving a satisfactory protection against grid breakdowns is a challenging task, as the optimisation of each single provision can result in drawbacks for other aspects of the design; for instance, the optimisation of the filter elements, obtained by reducing the filter capacitance, produces an increase of the output voltage ripple. Therefore, the design of the protections must be carried out considering all the relevant aspects of the specifications, also those that are not strictly related to the limitations of the current peaks and energy

The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

Directory of Open Access Journals (Sweden)

Donghua Liu

2015-01-01

Full Text Available This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD improved by field plate technology. Effect of metal field plate (MFP and polysilicon field plate (PFP on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp = 7.88 ohm * mm2 are achieved.

Investigation of efficient termination structure for improved breakdown properties of semiconductor radiation detectors

International Nuclear Information System (INIS)

Krizaj, D.; Resnik, D.; Vrtacnik, D.; Amon, S.

1998-01-01

Efficiency of a new junction termination structure for improvement of breakdown properties of semiconductor radiation detectors is investigated. The structure consists of a diffused resistor winding around the active junction in a spiral fashion. The current flow through the spiral enables controlled potential distribution along the spiral turns and thus controlled depletion spreading from the main junction, efficiently preventing premature avalanche breakdown. Both multiple guard-ring structures and spiral junction termination structures have shown good breakdown properties typically three to five times higher than breakdown voltages of diodes without junction termination. The breakdown voltages of spiral junction termination structures are only weakly influenced by changes in substrate doping concentration caused by neutron irradiation. They can thus be considered for termination of future semiconductor radiation detectors

Experimental study of the processes accompanying argon breakdown in a long discharge tube at a reduced pressure

Energy Technology Data Exchange (ETDEWEB)

Meshchanov, A. V.; Ionikh, Yu. Z., E-mail: y.ionikh@spbu.ru; Shishpanov, A. I.; Kalinin, S. A. [St. Petersburg State University (Russian Federation)

2016-10-15

Results are presented from experimental studies of the breakdown stage of a low-pressure discharge (1 and 5 Torr) in a glass tube the length of which (75 cm) is much larger than its diameter (2.8 cm). Breakdowns occurred under the action of positive voltage pulses with an amplitude of up to 9.4 kV and a characteristic rise time of 2–50 μs. The discharge current in the steady-state mode was 10–120 mA. The electrode voltage, discharge current, and radiation from the discharge gap were detected simultaneously. The dynamic breakdown voltage was measured, the prebreakdown ionization wave was recorded, and its velocity was determined. The dependence of the discharge parameters on the time interval between voltage pulses (the socalled “memory effect”) was analyzed. The memory effect manifests itself in a decrease or an increase in the breakdown voltage and a substantial decrease in its statistical scatter. The time interval between pulses in this case can reach 0.5 s. The effect of illumination of the discharge tube with a light source on the breakdown was studied. It is found that the irradiation of the anode region of the tube by radiation with wavelengths of ≤500 nm substantially reduces the dynamic breakdown voltage. Qualitative explanations of the obtained results are offered.

Improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers

Science.gov (United States)

Sima, Wenxia; Jiang, Xiongwei; Peng, Qingjun; Sun, Potao

2018-05-01

Electrical breakdown is an important physical phenomenon in electrical equipment and electronic devices. Many related models and theories of electrical breakdown have been proposed. However, a widely recognized understanding on the following phenomenon is still lacking: impulse breakdown strength which varies with waveform parameters, decrease in the breakdown strength of AC voltage with increasing frequency, and higher impulse breakdown strength than that of AC. In this work, an improved model of activation energy absorption for different electrical breakdowns in semi-crystalline insulating polymers is proposed based on the Harmonic oscillator model. Simulation and experimental results show that, the energy of trapped charges obtained from AC stress is higher than that of impulse voltage, and the absorbed activation energy increases with the increase in the electric field frequency. Meanwhile, the frequency-dependent relative dielectric constant ε r and dielectric loss tanδ also affect the absorption of activation energy. The absorbed activation energy and modified trap level synergistically determine the breakdown strength. The mechanism analysis of breakdown strength under various voltage waveforms is consistent with the experimental results. Therefore, the proposed model of activation energy absorption in the present work may provide a new possible method for analyzing and explaining the breakdown phenomenon in semi-crystalline insulating polymers.

Effect of high solenoidal magnetic fields on breakdown voltages of high vacuum 805 MHz cavities

International Nuclear Information System (INIS)

Moretti, A.; Bross, A.; Geer, S.; Qian, Z.; Norem, J.; Li, D.; Zisman, M.; Torun, Y.; Rimmer, R.; Errede, D.

2005-01-01

There is an on going international collaboration studying the feasibility and cost of building a muon collider or neutrino factory [1,2]. An important aspect of this study is the full understanding of ionization cooling of muons by many orders of magnitude for the collider case. An important muon ionization cooling experiment, MICE [3], has been proposed to demonstrate and validate the technology that could be used for cooling. Ionization cooling is accomplished by passing a high-emittance muon beam alternately through regions of low Z material, such as liquid hydrogen, and very high accelerating RF Cavities within a multi-Tesla solenoidal field. To determine the effect of very large solenoidal magnetic fields on the generation of dark current, x-rays and on the breakdown voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station and a large warm bore 5 T solenoidal superconducting magnet containing a pill box type cavity with thin removable window apertures. This system allows dark current and breakdown studies of different window configurations and materials. The results of this study will be presented. The study has shown that the peak achievable accelerating gradient is reduced by a factor greater than 2 when solenoidal field of greater than 2 T are applied to the cavity

CMOS-compatible high-voltage integrated circuits

Energy Technology Data Exchange (ETDEWEB)

Parpia, Z

1988-01-01

Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

Transistor collector breakdown in the presence of conducted EMP and gamma radiation

International Nuclear Information System (INIS)

Rice, D.H.

1975-01-01

In this paper we develop expressions which describe breakdown, negative resistance and latch characteristics for a common emitter transistor when exposed to simultaneous conducted EMP and ionizing radiation. These expressions are derived from a modified Ebers-Moll model and show that common emitter breakdown voltage is reduced, latch (or sustaining voltage) remains unchanged, and that the negative resistance characteristics are changed. Using the modified Ebers-Moll model good agreement between predicted and observed circuit response is demonstrated when the circuits are exposed to a rising collector voltage (due to EMP) and simultaneous ionizing (gamma) radiation

Electrical breakdown phenomena of dielectric elastomers

DEFF Research Database (Denmark)

Mateiu, Ramona Valentina; Yu, Liyun; Skov, Anne Ladegaard

2017-01-01

Silicone elastomers have been heavily investigated as candidates for dielectric elastomers and are as such almost ideal candidates with their inherent softness and compliance but they suffer from low dielectric permittivity. This shortcoming has been sought optimized by many means during recent...... years. However, optimization with respect to the dielectric permittivity solely may lead to other problematic phenomena such as premature electrical breakdown. In this work, we investigate the electrical breakdown phenomena of various types of permittivity-enhanced silicone elastomers. Two types...... of silicone elastomers are investigated and different types of breakdown are discussed. Furthermore the use of voltage stabilizers in silicone-based dielectric elastomers is investigated and discussed....

Evaluation of methods for increasing vacuum breakdown strength

International Nuclear Information System (INIS)

Evans, R.D.; Cooke, C.M.; Berman, E.R.

1977-01-01

Research to determine the effectiveness of coated and gas shielded cathodes as a means of increasing vacuum breakdown strength under short pulse conditions is reported. A technique for rapidly evaluating large numbers of coatings on small electrodes at relatively low pulse voltage (120 kV or less) and methods for testing larger electrodes and fewer coatings at higher total voltage were developed. Experiments with gas shielded cathodes were also conducted. Results suggest that it may be possible to eliminate prebreakdown current and to double breakdown strength by applying a suitable coating to the cathode. Breakdown stresses in excess of 2 MV/cm were obtained in a 0.5 mm gap with sputtered coatings of alumina, Cr 2 O 3 , and several readily available epoxies. Electrodes two orders of magnitude greater in area were tested, and stresses approaching 1 MV/cm were measured in 5 mm gaps for several epoxies and for alumina. It has further been shown that, because similar trends occurred in the data from large and small experiments, it should be possible to screen potential coatings rapidly and effectively with minimum expenditure using a method similar to that employed for small electrodes at low pulse voltage

A Combined Electro-Thermal Breakdown Model for Oil-Impregnated Paper

Directory of Open Access Journals (Sweden)

Meng Huang

2017-12-01

Full Text Available The breakdown property of oil-impregnated paper is a key factor for converter transformer design and operation, but it is not well understood. In this paper, breakdown voltages of oil-impregnated paper were measured at different temperatures. The results showed that with the increase of temperature, electrical, electro-thermal and thermal breakdown occurred successively. An electro-thermal breakdown model was proposed based on the heat equilibrium and space charge transport, and negative differential mobility was introduced to the model. It was shown that carrier mobility determined whether it was electrical or thermal breakdown, and the model can effectively explain the temperature-dependent breakdown.

Surface breakdown igniter for mercury arc devices

Science.gov (United States)

Bayless, John R.

1977-01-01

Surface breakdown igniter comprises a semiconductor of medium resistivity which has the arc device cathode as one electrode and has an igniter anode electrode so that when voltage is applied between the electrodes a spark is generated when electrical breakdown occurs over the surface of the semiconductor. The geometry of the igniter anode and cathode electrodes causes the igniter discharge to be forced away from the semiconductor surface.

Impulse breakdown of small air gap in electric field Part II: Statistical ...

African Journals Online (AJOL)

The patterns of shot distribution and maximum coverage at impulse breakdown voltage for positive point electr-odes (needle and cone electrodes) in small air gaps in non-uniform electric fields were investigated. During the breakdown test, a sheet of paper was placed on the plate electrode (-ve), and each breakdown shot ...

Humidity and polarity influence on MIM PZT capacitor degradation and breakdown

NARCIS (Netherlands)

Wang, Jiahui; Salm, Cora; Houwman, Evert; Schmitz, Jurriaan; Nguyen, Minh

2016-01-01

This paper presents a reliability study on unpackaged metal-PZT-metal capacitors. Both ramped voltage stress (RVS) and time dependent dielectric breakdown (TDDB) measurements show that environmental humidity dramatically worsens the PZT reliability. Visible breakdown spots on the surface of PZT

Surface of Alumina Films after Prolonged Breakdowns in Galvanostatic Anodization

Directory of Open Access Journals (Sweden)

Christian Girginov

2011-01-01

Full Text Available Breakdown phenomena are investigated at continuous isothermal (20∘C and galvanostatic (0.2–5 mA cm−2 anodizing of aluminum in ammonium salicylate in dimethylformamide (1 M AS/DMF electrolyte. From the kinetic (-curves, the breakdown voltage ( values are estimated, as well as the frequency and amplitude of oscillations of formation voltage ( at different current densities. The surface of the aluminum specimens was studied using atomic force microscopy (AFM. Data on topography and surface roughness parameters of the electrode after electric breakdowns are obtained as a function of anodization time. The electrode surface of anodic films, formed with different current densities until the same charge density has passed (2.5 C cm−2, was assessed. Results are discussed on the basis of perceptions of avalanche mechanism of the breakdown phenomena, due to the injection of electrons and their multiplication in the volume of the film.

Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices.

Science.gov (United States)

Pejović, Milić M; Denić, Dragan B; Pejović, Momčilo M; Nešić, Nikola T; Vasović, Nikola

2010-10-01

This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven by TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.

Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices

Energy Technology Data Exchange (ETDEWEB)

Pejovic, Milic M.; Denic, Dragan B.; Pejovic, Momcilo M.; Nesic, Nikola T.; Vasovic, Nikola [Faculty of Electronic Engineering, University of Nis, Aleksandra Medvedeva 14, 18000 Nis (Serbia)

2010-10-15

This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven by TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.

Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices

International Nuclear Information System (INIS)

Pejovic, Milic M.; Denic, Dragan B.; Pejovic, Momcilo M.; Nesic, Nikola T.; Vasovic, Nikola

2010-01-01

This paper presents realization of a digital embedded system for measuring electrical breakdown time delay. The proposed system consists of three major parts: dc voltage supply, analog subsystem, and a digital subsystem. Any dc power source with the range from 100 to 1000 V can be used in this application. The analog subsystem should provide fast and accurate voltage switching on the testing device as well as transform the signals that represent the voltage pulse on the device and the device breakdown into the form suitable for detection by a digital subsystem. The insulated gate bipolar transistor IRG4PH40KD driven by TC429 MOSFET driver is used for high voltage switching on the device. The aim of a digital subsystem is to detect the signals from the analog subsystem and to measure the elapsed time between their occurrences. Moreover, the digital subsystem controls various parameters that influence time delay and provides fast data storage for a large number of measured data. For this propose, we used the PIC18F4550 microcontroller with a full-speed compatible universal serial bus (USB) engine. Operation of this system is verified on different commercial and custom made gas devices with different structure and breakdown mechanisms. The electrical breakdown time delay measurements have been carried out as a function of several parameters, which dominantly influence electrical breakdown time delay. The obtained results have been verified using statistical methods, and they show good agreement with the theory. The proposed system shows good repeatability, sensitivity, and stability for measuring the electrical breakdown time delay.

Improvement in the Design of Metal-Ceramic High Voltage Feedthroughs for use in High Energy Particle Accelerators

CERN Document Server

Weterings, W

1999-01-01

Large high-voltage devices operate in particle accelerators to steer charged particles in the desired direction. Solid and hollow rods of sintered alumina are used as insulating supports and high-voltage feedthroughs to power the electrodes of these electrostatic systems. The performance of the systems is often limited by voltage breakdown along the surface of the ceramic insulator (so-called surface flashover) or discharge between feedthrough and vacuum tank, which can lead to significant disruptions in terms of overall machine efficiency. Available results on the influence of the mechanical preparation, thermal history and particular cleaning techniques on commercially obtainable alumina samples have been studied in order to investigate possibilities for better preparation methodology of the insulating supports. Also the influence of the relative position of the feedthrough inside the vacuum tank on the high-voltage breakdown behaviour has been studied. This paper describes the theoretical and practical bac...

High voltage capacitor design and the determination of solid dielectric voltage breakdown

International Nuclear Information System (INIS)

Hutapea, S.

1976-01-01

The value of the external field intensity serves as an electrical insulating material and is a physical characteristic of the substance. Capacitor discharge in the dielectric medium are experimentally investigated. The high voltage power supply and other instrument needed are briefly discussed. Capacitors with working voltage of 30.000 volt and the plastic being used for dielectrics in the capacitors are also discussed. (author)

Study of protection devices against the effects of electric discharges inside a very high voltage generator: the Vivitron accelerator

International Nuclear Information System (INIS)

Nolot, E.

1996-01-01

The Vivitron tandem is a large electrostatic accelerator comprising a Van de Graaff generator designed to reach terminal voltages of around 30 MV. The machine is limited at rather lower nominal voltages (about 20 MV) due to the sensitivity of the insulating column structure to transient overvoltages. These are induced by electrical discharges in compressed SF 6 . This thesis first aims at analysing the fundamental reasons of electrical discharges in order to limit the probability of their occurrence. Then we simulate the transient overvoltages induced and present some improvements which may lead to a stable behaviour of the Vivitron at nominal voltages higher than 20 MV. Initially we deduce discharge onset voltages and actual breakdown field limitations in the different gap geometries from analysis of possible breakdown mechanisms in compressed SF 6 . In a second part, some electrical characteristics of the insulating column structure are measured at high voltage. Fast rising oscillating waves induced by sparking in the Vivitron, along with the associated energies,are determined in the third part. The last part deals with new surge protections of the insulating column structure. Spark gaps with precise onset voltage and optimized shielding electrodes are discussed. ZnO-based varistors designed for operation at very high fields have also been developed in order to reduce transient overvoltage values. (author)

Giant, Voltage-Actuated Deformation of a Dielectric Elastomer under Dead Load

OpenAIRE

Huang, Jiangshui; Li, Tiefeng; Foo, Choon Chiang; Clarke, David R.; Zhu, Jian; Suo, Zhigang

2012-01-01

Far greater voltage-actuated deformation is achievable for a dielectric elastomer under equal-biaxial dead load than under rigid constraint usually employed. Areal strains of 488% are demonstrated. The dead load suppresses electric breakdown, enabling the elastomer to survive the snap-through electromechanical instability. The breakdown voltage is found to increase with the voltage ramp rate. A nonlinear model for viscoelastic dielectric elastomers is developed and shown to be consistent with...

Energetic breakdowns and voltage hold-off between copper electrodes in vacuum

International Nuclear Information System (INIS)

Bottiglioni, F.; Bussac, J.P.

1980-10-01

In high power neutral beam injections, used for thermonuclear research, very high ion currents are extracted from large area ion sources, using an assembly of three or four extraction grids. The extraction system must be very reliable and unaffected by breakdowns that may occur between grids. The aim of the experiments described here, is to infer some empirical laws allowing to dimension the ion sources grid gaps and to assess what energy in the breakdowns leads to irreversible damages

High-Voltage Breakdown Penalties for the Beam-Breakup Instability

International Nuclear Information System (INIS)

Ekdahl, Carl August

2016-01-01

The strength of the dangerous beam breakup (BBU) instability in linear induction accelerators (LIAs) is determined by the transverse coupling impedance Z_⊥ of the induction cell cavity. For accelerating gap width w less than the beam pipe radius b, the transverse impedance is theoretically proportional to w/b, favoring narrow gaps to suppress BBU. On the other hand, cells with narrow gaps cannot support high accelerating gradients, because of electrical breakdown and shorting of the gap. Thus, there is an engineering trade-off between BBU growth and accelerating gradient, which must be considered for next generation LIAs now being designed. In this article this tradeoff is explored, using a simple pillbox cavity as an illustrative example. For this model, widening the gap to reduce the probability of breakdown increases BBU growth, unless higher magnetic focusing fields are used to further suppress the instability.

Breakdown assisted by a novel electron drift injection in the J-TEXT tokamak

International Nuclear Information System (INIS)

Wang, Nengchao; Jin, Hai; Zhuang, Ge; Ding, Yonghua; Pan, Yuan; Cen, Yishun; Chen, Zhipeng; Huang, Hai; Liu, Dequan; Rao, Bo; Zhang, Ming; Zou, Bichen

2014-01-01

A novel electron drift injection (EDI) system aiming to improve breakdown behavior has been designed and constructed on the Joint Texas EXperiment Tokamak Tokamak. Electrons emitted by the system undergo the E×B drift, ∇B drift and curvature drift in sequence in order to traverse the confining magnetic field. A local electrostatic well, generated by a concave-shaped plate biased more negative than the cathode, is introduced to interrupt the emitted electrons moving along the magnetic field line (in the parallel direction) in an attempt to bring an enhancement of the injection efficiency and depth. A series of experiments have demonstrated the feasibility of this method, and a penetration distance deeper than 9.5 cm is achieved. Notable breakdown improvements, including the reduction of breakdown delay and average loop voltage, are observed for discharges assisted by EDI. The lower limit of successfully ionized pressure is expanded

A dulal-functional medium voltage level DVR to limit downstream fault currents

DEFF Research Database (Denmark)

Blaabjerg, Frede; Li, Yun Wei; Vilathgamuwa, D. Mahinda

2007-01-01

on the other parallel feeders connected to PCC. Furthermore, if not controlled properly, the DVR might also contribute to this PCC voltage sag in the process of compensating the missing voltage, thus further worsening the fault situation. To limit the flow of large line currents, and therefore restore the PCC...... situations. Controlling the DVR as a virtual inductor would also ensure zero real power absorption during the DVR compensation and thus minimize the stress in the dc link. Finally, the proposed fault current limiting algorithm has been tested in Matlab/Simulink simulation and experimentally on a medium......The dynamic voltage restorer (DVR) is a modern custom power device used in power distribution networks to protect consumers from sudden sags (and swells) in grid voltage. Implemented at medium voltage level, the DVR can be used to protect a group of medium voltage or low voltage consumers. However...

Specific features of a single-pulse sliding discharge in neon near the threshold for spark breakdown

Science.gov (United States)

Trusov, K. K.

2017-08-01

Experimental data on the spatial structure of a single-pulse sliding discharge in neon at voltages below, equal to, and above the threshold for spark breakdown are discussed. The experiments were carried at gas pressures of 30 and 100 kPa and different polarities of the discharge voltage. Photographs of the plasma structure in two discharge chambers with different dimensions of the discharge zone and different thicknesses of an alumina dielectric plate on the surface of which the discharge develops are inspected. Common features of the prebreakdown discharge and its specific features depending on the voltage polarity and gas pressure are analyzed. It is shown that, at voltages below the threshold for spark breakdown, a low-current glow discharge with cathode and anode spots develops in the electrode gap. Above the breakdown threshold, regardless of the voltage polarity, spark channels directed from the cathode to the anode develop against the background of a low-current discharge.

Experimental breakdown of selected anodized aluminum samples in dilute plasmas

Science.gov (United States)

Grier, Norman T.; Domitz, Stanley

1992-01-01

Anodized aluminum samples representative of Space Station Freedom structural material were tested for electrical breakdown under space plasma conditions. In space, this potential arises across the insulating anodized coating when the spacecraft structure is driven to a negative bias relative to the external plasma potential due to plasma-surface interaction phenomena. For anodized materials used in the tests, it was found that breakdown voltage varied from 100 to 2000 volts depending on the sample. The current in the arcs depended on the sample, the capacitor, and the voltage. The level of the arc currents varied from 60 to 1000 amperes. The plasma number density varied from 3 x 10 exp 6 to 10 exp 3 ions per cc. The time between arcs increased as the number density was lowered. Corona testing of anodized samples revealed that samples with higher corona inception voltage had higher arcing inception voltages. From this it is concluded that corona testing may provide a method of screening the samples.

Statistical characteristics of transient enclosure voltage in ultra-high-voltage gas-insulated switchgear

Science.gov (United States)

Cai, Yuanji; Guan, Yonggang; Liu, Weidong

2017-06-01

Transient enclosure voltage (TEV), which is a phenomenon induced by the inner dielectric breakdown of SF6 during disconnector operations in a gas-insulated switchgear (GIS), may cause issues relating to shock hazard and electromagnetic interference to secondary equipment. This is a critical factor regarding the electromagnetic compatibility of ultra-high-voltage (UHV) substations. In this paper, the statistical characteristics of TEV at UHV level are collected from field experiments, and are analyzed and compared to those from a repeated strike process. The TEV waveforms during disconnector operations are recorded by a self-developed measurement system first. Then, statistical characteristics, such as the pulse number, duration of pulses, frequency components, magnitude and single pulse duration, are extracted. The transmission line theory is introduced to analyze the TEV and is validated by the experimental results. Finally, the relationship between the TEV and the repeated strike process is analyzed. This proves that the pulse voltage of the TEV is proportional to the corresponding breakdown voltage. The results contribute to the definition of the standard testing waveform of the TEV, and can aid the protection of electronic devices in substations by minimizing the threat of this phenomenon.

Maximum penetration level of distributed generation without violating voltage limits

NARCIS (Netherlands)

Morren, J.; Haan, de S.W.H.

2009-01-01

Connection of Distributed Generation (DG) units to a distribution network will result in a local voltage increase. As there will be a maximum on the allowable voltage increase, this will limit the maximum allowable penetration level of DG. By reactive power compensation (by the DG unit itself) a

Breakdown of coupling dielectrics for Si microstrip detectors

International Nuclear Information System (INIS)

Candelori, A.; Paccagnella, A.; Padova Univ.; Saglimbeni, G.

1999-01-01

Double-layer coupling dielectrics for AC-coupled Si microstrip detectors have been electrically characterized in order to determine their performance in a radiation-harsh environment, with a focus on the dielectric breakdown. Two different dielectric technologies have been investigated: SiO 2 /TEOS and SiO 2 /Si 3 N 4 . Dielectrics have been tested by using a negative gate voltage ramp of 0.2 MV/(cm·s). The metal/insulator/Si I-V characteristics show different behaviours depending on the technology. The extrapolated values of the breakdown field for unirradiated devices are significantly higher for SiO 2 /Si 3 N 4 dielectrics, but the data dispersion is lower for SiO 2 /TEOS devices. No significant variation of the breakdown field has been measured after a 10 Mrad (Si) γ irradiation for SiO 2 /Si 3 N 4 dielectrics. Finally, the SiO 2 /Si 3 N 4 DC conduction is enhanced if a positive gate voltage ramp is applied with respect to the negative one, due to the asymmetric conduction of the double-layer dielectric

Breakdown of the 1/N expansion in the continuum limit of strong coupling lattice QCD

International Nuclear Information System (INIS)

Bralic, N.; Pontificia Universidade Catolica de Chile, Santiago. Facultad de Fisica); Loewe, M.

1983-08-01

The restoration of lorentz covariance in the continuum limit of strong coupling lattice QCD is shown to require the breakdown of the 1/N expansion. With the leading 1/N appoximation becoming irrelevant in that limit. To leading order in 1/N lorentz convariance can be restored only as an approximate long distance symmetry a non conventional continuum limit with a non hermitian hamiltonian. (Author) [pt

A three-dimensional breakdown model of SOI lateral power transistors with a circular layout

International Nuclear Information System (INIS)

Guo Yufeng; Wang Zhigong; Sheu Gene

2009-01-01

This paper presents an analytical three-dimensional breakdown model of SOI lateral power devices with a circular layout. The Poisson equation is solved in cylindrical coordinates to obtain the radial surface potential and electric field distributions for both fully- and partially-depleted drift regions. The breakdown voltages for N + N and P + N junctions are derived and employed to investigate the impact of cathode region curvature. A modified RESURF criterion is proposed to provide a design guideline for optimizing the breakdown voltage and doping concentration in the drift region in three dimensional space. The analytical results agree well with MEDICI simulation results and experimental data from earlier publications. (semiconductor devices)

Thermal instability and current-voltage scaling in superconducting fault current limiters

Energy Technology Data Exchange (ETDEWEB)

Zeimetz, B [Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge CB1 3QZ (United Kingdom); Tadinada, K [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Eves, D E [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Coombs, T A [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom); Evetts, J E [Department of Materials Science and Metallurgy, Cambridge University, Pembroke Street, Cambridge CB1 3QZ (United Kingdom); Campbell, A M [Department of Engineering, Cambridge University, Trumpington Road, Cambridge CB2 1PZ (United Kingdom)

2004-04-01

We have developed a computer model for the simulation of resistive superconducting fault current limiters in three dimensions. The program calculates the electromagnetic and thermal response of a superconductor to a time-dependent overload voltage, with different possible cooling conditions for the surfaces, and locally variable superconducting and thermal properties. We find that the cryogen boil-off parameters critically influence the stability of a limiter. The recovery time after a fault increases strongly with thickness. Above a critical thickness, the temperature is unstable even for a small applied AC voltage. The maximum voltage and maximum current during a short fault are correlated by a simple exponential law.

Breakdown criteria due to radio-frequency fields in vacuum. Final report

International Nuclear Information System (INIS)

Reid, D.W.; Lohsen, R.A.

1982-01-01

The factors that affect the voltage at which vacuum gaps break down are analyzed. Based on the literature and some simplifying assumptions, a functional dependence is hypothesized. The hypothesis is related to a proposed experiment using radio-frequency power to generate the breakdown voltage

Numerical Study on Alternating Current Breakdown Mechanism Between Sphere-Sphere Electrodes in Transformer Oil-Based Magnetic Nanofluids.

Science.gov (United States)

Lee, Won-Ho; Lee, Jong-Chul

2018-09-01

A numerical simulation was developed for magnetic nanoparticles in a liquid dielectric to investigate the AC breakdown voltage of the magnetic nanofluids according to the volume concentration of the magnetic nanoparticles. In prior research, we found that the dielectric breakdown voltage of the transformer oil-based magnetic nanofluids was positively or negatively affected according to the amount of magnetic nanoparticles under a testing condition of dielectric fluids, and the trajectory of the magnetic nanoparticles in a fabricated chip was visualized to verify the related phenomena via measurements and computations. In this study, a numerical simulation of magnetic nanoparticles in an insulating fluid was developed to model particle tracing for AC breakdown mechanisms happened to a sphere-sphere electrode configuration and to propose a possible mechanism regarding the change in the breakdown strength due to the behavior of the magnetic nanoparticles with different applied voltages.

High stored-energy breakdown tests on electrodes made of stainless steel, copper, titanium and molybdenum

Energy Technology Data Exchange (ETDEWEB)

Esch, H. P. L. de, E-mail: hubert.de-esch@cea.fr; Simonin, A.; Grand, C. [CEA-Cadarache, IRFM, F-13108 St. Paul-lez-Durance (France)

2015-04-08

IRFM have conducted resilience tests on electrodes made of Cu, stainless steel 304L, Ti and Mo against breakdowns up to 170 kV and 300 J. The tests of the 10×10 cm{sup 2} electrodes have been performed at an electrode distance d=11 mm under vacuum (P∼5×10{sup −6} mbar). No great difference in voltage holding between the materials could be identified; all materials could reach a voltage holding between 140 and 170 kV over the 11 mm gap, i.e. results scatter within a ±10% band. After exposure to ∼10000 seconds of high-voltage (HV) on-time, having accumulated ∼1000 breakdowns, the electrodes were inspected. The anodes were covered with large and small craters. The rugosity of the anodes had increased substantially, that of the cathodes to a lesser extent. The molybdenum electrodes are least affected, but this does not show in their voltage holding capability. It is hypothesized that penetrating high-energy electrons from the breakdown project heat below the surface of the anode and cause a micro-explosion of material when melting point is exceeded. Polished electrodes have also been tested. The polishing results in a substantially reduced breakdown rate in the beginning, but after having suffered a relatively small number (∼100) of breakdowns, the polished electrodes behaved the same as the unpolished ones.

Degradation characteristics of 2G HTS tapes with respect to an electrical breakdown

International Nuclear Information System (INIS)

Kang, Jong O; Lee, On You; Mo, Young Kyu; Kim, Jun Il; Bang, Seung Min; Lee, Hong Seok; Kang, Hyoung Ku; Lee, Jae Hun; Jang, Cheol Yeong

2015-01-01

The electrical insulation design for a superconducting coil system is important for developing high voltage superconducting apparatuses. Also, the degraded characteristics of superconducting tapes due to an electrical breakdown should be considered for superconducting coils design. In this study, the degradation characteristics of 2G high temperature superconducting (HTS) tapes were studied with respect to electrical breakdown tests. The degradation tests of 2G HTS tapes were performed with various stabilizer materials. The degradation characteristics of 2G HTS tapes such as critical current(Ic) and index number were observed by performing electrical breakdown tests. It was found that the characteristics such as Ic and index number can be degraded by an electrical breakdown. Moreover, it was concluded that the degradation characteristics of 2G HTS tapes were affected by a stabilizer material and applied breakdown voltage. The cross sectional view of 2G HTS tapes was observed by using a scanning electron microscope (SEM). As results, it is found that the degradation characteristics of 2G HTS tapes are concerned with hardness and electrical resistivity of stabilizer layers

Electric Conductivity and Dielectric-Breakdown Behavior for Polyurethane Magnetic Elastomers.

Science.gov (United States)

Sasaki, Shuhei; Tsujiei, Yuri; Kawai, Mika; Mitsumata, Tetsu

2017-02-23

The electric-voltage dependence of the electric conductivity for cross-linked and un-cross-linked magnetic elastomers was measured at various magnetic fields, and the effect of cross-linking on the electric conductivity and the dielectric-breakdown behavior was investigated. The electric conductivity for un-cross-linked elastomers at low voltages was independent of magnetic fields and the volume fraction of magnetic particles, indicating the electric conduction in the polyurethane matrix. At high voltages, the electric conductivity increased with the magnetic field, showing the electric conduction via chains of magnetic particles. On the other hand, the electric conductivity at low voltages for cross-linked elastomers with volume fractions below 0.06 was independent of the magnetic field, suggesting the electric conduction in the polyurethane matrix. At volume fractions above 0.14, the electric conductivity increased with the magnetic field, suggesting the electric conduction via chains of magnetic particles. At high voltages, the electric conductivity for cross-linked elastomers with a volume fraction of 0.02 was independent of the magnetic field, indicating the electric conduction through the polyurethane matrix. At volume fractions above 0.06, the electric conductivity suddenly increased at a critical voltage, exhibiting the dielectric breakdown at the bound layer of magnetic particles and/or the discontinuous part between chains.

Off state breakdown behavior of AlGaAs / InGaAs field plate pHEMTs

International Nuclear Information System (INIS)

Palma, John; Mil'shtein, Samson

2014-01-01

Off-state breakdown voltage, V br , is an important parameter determining the maximum power output of microwave Field Effect Transistors (FETs). In recent years, the use of field plates has been widely adopted to significantly increase V br . This important technological development has extended FET technologies into new areas requiring these higher voltages and power levels. Keeping with this goal, field plates were added to an existing AlGaAs / InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT) process with the aim of determining the off-state breakdown mechanism and the dependency of V br on the field plate design. To find the mechanism responsible for breakdown, temperature dependent off-state breakdown measurements were conducted. It was found that at low current levels, the temperature dependence indicates thermionic field emission at the Schottky gate and at higher current levels, impact ionization is indicated. The combined results imply that impact ionization is ultimately the mechanism that is responsible for the breakdown in the tested transistors, but that it is preceded by thermionic field emission from the gate. To test the dependence of V br upon the field plate design, the field plate length and the etch depth through the highly-doped cap layer under the field plate were varied. Also, non-field plate devices were tested along side field plate transistors. It was found that the length of the etched region under the field plate is the dominant factor in determining the off-state breakdown of the more deeply etched devices. For less deeply etched devices, the length of the field plate is more influential. The influence of surface states between the highly doped cap layer and the passivation layer along the recess are believed to have a significant influence in the case of the more deeply etched examples. It is believed that these traps spread the electric field, thus raising the breakdown voltage. Three terminal breakdown voltages

A micro-power LDO with piecewise voltage foldback current limit protection

International Nuclear Information System (INIS)

Wei Hailong; Liu Youbao; Guo Zhongjie; Liao Xue

2012-01-01

To achieve a constant current limit, low power consumption and high driving capability, a micro-power LDO with a piecewise voltage-foldback current-limit circuit is presented. The current-limit threshold is dynamically adjusted to achieve a maximum driving capability and lower quiescent current of only 300 nA. To increase the loop stability of the proposed LDO, a high impedance transconductance buffer under a micro quiescent current is designed for splitting the pole that exists at the gate of the pass transistor to the dominant pole, and a zero is designed for the purpose of the second pole phase compensation. The proposed LDO is fabricated in a BiCMOS process. The measurement results show that the short-circuit current of the LDO is 190 mA, the constant limit current under a high drop-out voltage is 440 mA, and the maximum load current under a low drop-out voltage is up to 800 mA. In addition, the quiescent current of the LDO is only 7 μA, the load regulation is about 0.56% on full scale, the line regulation is about 0.012%/V, the PSRR at 120 Hz is 58 dB and the drop-out voltage is only 70 mV when the load current is 250 mA. (semiconductor integrated circuits)

Radiation effects on breakdown in silicon multiguarded diodes

International Nuclear Information System (INIS)

Bisello, D.; Da Rold, M.; Franzin, L.; Wheadon, R.

1996-01-01

The authors have investigated the current-voltage characteristics of silicon PIN diodes with a number of different multiguard structures. These structures were designed to increase the overall device breakdown voltage. The same measurements were carried out after gamma irradiation at different doses and neutron irradiation at fluences beyond type-inversion. This study is a first step towards defining guard structures optimized for operation in high-radiation environments such as those expected at the LHC

DC-driven plasma gun: self-oscillatory operation mode of atmospheric-pressure helium plasma jet comprised of repetitive streamer breakdowns

Science.gov (United States)

Wang, Xingxing; Shashurin, Alexey

2017-02-01

This paper presents and studies helium atmospheric pressure plasma jet comprised of a series of repetitive streamer breakdowns, which is driven by pure DC high voltage (self-oscillatory behavior). The repetition frequency of the breakdowns is governed by the geometry of discharge electrodes/surroundings and gas flow rate. Each next streamer is initiated when the electric field on the anode tip recovers after the previous breakdown and reaches the breakdown threshold value of about 2.5 kV cm-1. One type of the helium plasma gun designed using this operational principle is demonstrated. The gun operates on about 3 kV DC high voltage and is comprised of the series of the repetitive streamer breakdowns at a frequency of about 13 kHz.

Bi-layer SixNy passivation on AlGaN/GaN HEMTs to suppress current collapse and improve breakdown

International Nuclear Information System (INIS)

Lee, K B; Green, R T; Houston, P A; Tan, W S; Uren, M J; Wallis, D J; Martin, T

2010-01-01

Si x N y deposited at low temperature was found to improve the breakdown voltage of AlGaN/GaN HEMTs at the expense of current collapse due to the presence of a high density of charge trapping states. On the other hand, stoichiometric Si 3 N 4 film deposited at high temperature was effective in mitigating current slump but no improvement in the breakdown voltage was observed. Combining the benefit of both films, a bi-layer stacked passivation has been employed on the HEMTs. Gate lag measurements revealed that the current collapse was mitigated and the breakdown voltage of the devices was found to increase from 120 V to 238 V upon passivation

A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

International Nuclear Information System (INIS)

Jamali Mahabadi, S E; Orouji, Ali A; Keshavarzi, P; Moghadam, Hamid Amini

2011-01-01

In this paper, for the first time, we propose a partial silicon-on-insulator (P-SOI) lateral double-diffused metal-oxide-semiconductor-field-effect-transistor (LDMOSFET) with a modified buried layer in order to improve breakdown voltage (BV) and self-heating effects (SHEs). The main idea of this work is to control the electric field by shaping the buried layer. With two steps introduced in the buried layer, the electric field distribution is modified. Also a P-type window introduced makes the substrate share the vertical voltage drop, leading to a high vertical BV. Moreover, four interface electric field peaks are introduced by the buried P-layer, the Si window and two steps, which modulate the electric field in the SOI layer and the substrate. Hence, a more uniform electric field is obtained; consequently, a high BV is achieved. Furthermore, the Si window creates a conduction path between the active layer and substrate and alleviates the SHE. Two-dimensional simulations show that the BV of double step partial silicon on insulator is nearly 69% higher and alleviates SHEs 17% in comparison with its single step partial SOI counterpart and nearly 265% higher and alleviate SHEs 18% in comparison with its conventional SOI counterpart

Stress-induced breakdown during galvanostatic anodising of zirconium

International Nuclear Information System (INIS)

Van Overmeere, Q.; Proost, J.

2010-01-01

Although internal stress is frequently being suggested as a plausible reason for oxide breakdown during valve metal anodising, no direct quantitative evidence has been made available yet. In this work, we anodized sputtered zirconium thin films galvanostatically at room temperature in sulphuric acid until breakdown was observed, and simultaneously measured the internal stress evolution in the oxide in situ, using a high-resolution curvature setup. It was found that the higher the magnitude of the observed internal compressive stress in the oxide, the smaller the oxide thickness at which breakdown occurred. The moment of breakdown was identified from a slope change in the cell voltage evolution, indicative for a decrease in anodising efficiency. The latter presumably occurs as a result of oxygen evolution, initiated by the relative increase of the cubic or tetragonal zirconia phase content relative to the monoclinic one. This was evidenced in turn by comparing electron diffractograms, taken in a transmission electron microscope, before and after breakdown. The critical role of internal stress on oxide breakdown during zirconium anodising can therefore be associated with its promoting effect on the densifying phase transformation of monoclinic oxide.

An automatic method to analyze the Capacity-Voltage and Current-Voltage curves of a sensor

CERN Document Server

AUTHOR|(CDS)2261553

2017-01-01

An automatic method to perform Capacity versus voltage analysis for all kind of silicon sensor is provided. It successfully calculates the depletion voltage to unirradiated and irradiated sensors, and with measurements with outliers or reaching breakdown. It is built using C++ and using ROOT trees with an analogous skeleton as TRICS, where the data as well as the results of the ts are saved, to make further analysis.

High voltage engineering fundamentals

CERN Document Server

Kuffel, E; Hammond, P

1984-01-01

Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

Pre-breakdown light emission phenomena in low-pressure argon between parabolic electrodes

Energy Technology Data Exchange (ETDEWEB)

Wagenaars, E [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Perriens, N W B [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Brok, W J M [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Bowden, M D [Department of Physics and Astronomy, The Open University, Milton Keynes, MK7 6AA (United Kingdom); Veldhuizen, E M van [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Kroesen, G M W [Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands)

2006-09-07

An experimental study on pre-breakdown light emission in low-pressure argon gas was performed. In a pulsed discharge, pre-breakdown phenomena were observed for repetition rates between 100 and 2000 Hz and pulse duration of 100 {mu}s. These phenomena were studied with time-resolved emission imaging using an intensified charge coupled device camera. The origin of the pre-breakdown emission was identified as diffusion of volume charges left over from previous discharges. These charges were accelerated towards the anode in small electron avalanches causing excitation of argon atoms. Different spatial distributions of the pre-breakdown light emission for different times between discharges were measured and the effects of the pre-breakdown phenomena on the main breakdown phase were studied using a double voltage pulse. The observed effects were attributed to the distribution of volume charges, left over from previous discharges, in the discharge gap during the pre-breakdown phase.

Uv laser triggering of high-voltage gas switches

International Nuclear Information System (INIS)

Woodworth, J.R.; Frost, C.A.; Green, T.A.

1982-01-01

Two different techniques are discussed for uv laser triggering of high-voltage gas switches using a KrF laser (248 nm) to create an ionized channel through the dielectric gas in a spark gap. One technique uses an uv laser to induce breakdown in SF 6 . For this technique, we present data that demonstrate a 1-sigma jitter of +- 150 ps for a 0.5-MV switch at 80% of its self-breakdown voltage using a low-divergence KrF laser. The other scheme uses additives to the normal dielectric gas, such as tripropylamine, which are selected to undergo resonant two-step ionization in the uv laser field

AC electrical breakdown phenomena of epoxy/layered silicate nanocomposite in needle-plate electrodes.

Science.gov (United States)

Park, Jae-Jun; Lee, Jae-Young

2013-05-01

Epoxy/layered silicate nanocomposite for the insulation of heavy electric equipments were prepared by dispersing 1 wt% of a layered silicate into an epoxy matrix with a homogenizing mixer and then AC electrical treeing and breakdown tests were carried out. Wide-angle X-ray diffraction (WAXD) analysis and transmission electron microscopy (TEM) observation showed that nano-sized monolayers were exfoliated from a multilayered silicate in the epoxy matrix. When the nano-sized silicate layers were incorporated into the epoxy matrix, the breakdown rate in needle-plate electrode geometry was 10.6 times lowered than that of the neat epoxy resin under the applied electrical field of 520.9 kV/mm at 30 degrees C, and electrical tree propagated with much more branches in the epoxy/layered silicate nanocomposite. These results showed that well-dispersed nano-sized silicate layers retarded the electrical tree growth rate. The effects of applied voltage and ambient temperature on the tree initiation, growth, and breakdown rate were also studied, and it was found that the breakdown rate was largely increased, as the applied voltage and ambient temperature increased.

Breakdown dynamics of electrically exploding thin metal wires in vacuum

Science.gov (United States)

Sarkisov, G. S.; Caplinger, J.; Parada, F.; Sotnikov, V. I.

2016-10-01

Using a two-frame intensified charge coupled device (iCCD) imaging system with a 2 ns exposure time, we observed the dynamics of voltage breakdown and corona generation in experiments of fast ns-time exploding fine Ni and stainless-steel (SS) wires in a vacuum. These experiments show that corona generation along the wire surface is subjected to temporal-spatial inhomogeneity. For both metal wires, we observed an initial generation of a bright cathode spot before the ionization of the entire wire length. This cathode spot does not expand with time. For 25.4 μm diameter Ni and SS wire explosions with positive polarity, breakdown starts from the ground anode and propagates to the high voltage cathode with speeds approaching 3500 km/s or approximately one percent of light speed.

dc breakdown conditioning and breakdown rate of metals and metallic alloys under ultrahigh vacuum

CERN Document Server

Descoeudres, A; Calatroni, S; Taborelli, M; Wuensch, W

2009-01-01

RF accelerating structures of the Compact Linear Collider (CLIC) require a material capable of sustaining high electric field with a low breakdown rate and low induced damage. Because of the similarity of many aspects of DC and RF breakdown, a DC breakdown study is underway at CERN in order to test candidate materials and surface preparations, and have a better understanding of the breakdown mechanism under ultra-high vacuum in a simple setup. Conditioning speeds and breakdown fields of several metals and alloys have been measured. The average breakdown field after conditioning ranges from 100 MV/m for Al to 850 MV/m for stainless steel, and is around 170 MV/m for Cu which is the present base-line material for CLIC structures. The results indicate clearly that the breakdown field is limited by the cathode. The presence of a thin cuprous oxide film at the surface of copper electrodes significantly increases the breakdown field. On the other hand, the conditioning speed of Mo is improved by removing oxides at t...

Study of n-on-p sensors breakdown in presence of dielectrics placed on top surface

CERN Document Server

Helling, Cole Michael; The ATLAS collaboration

2018-01-01

The ATLAS Upgrade strip module design has readout flex circuits glued directly on top of the sensors’ active area to facilitate the assembly process and minimize the radiation length. The process requires radiation-hard adhesives compatible with the sensor technology. We report on the studies of the breakdown behavior with miniature versions of the prototype sensors, where candidate adhesives were placed in several locations on top of the sensor, including the strip area, guard ring region, and sensor edge. Thermal cycling tends to attenuate the observed cases of breakdown with glue on top of the guard ring. Glue reaching the sensor edge results in low breakdown voltage if it also covers AC- or DC- pads or bias ring openings. Glue placement on top of guard ring region was performed on a large-format sensor, with generally similar results to the miniature sensor tests, except for a large glue deposition, which resulted in a permanent reduction of the breakdown voltage. Post-irradiation measurements were perf...

Enhancement of laser-induced breakdown spectroscopy (LIBS) Detection limit using a low-pressure and short-pulse laser-induced plasma process.

Science.gov (United States)

Wang, Zhen Zhen; Deguchi, Yoshihiro; Kuwahara, Masakazu; Yan, Jun Jie; Liu, Ji Ping

2013-11-01

Laser-induced breakdown spectroscopy (LIBS) technology is an appealing technique compared with many other types of elemental analysis because of the fast response, high sensitivity, real-time, and noncontact features. One of the challenging targets of LIBS is the enhancement of the detection limit. In this study, the detection limit of gas-phase LIBS analysis has been improved by controlling the pressure and laser pulse width. In order to verify this method, low-pressure gas plasma was induced using nanosecond and picosecond lasers. The method was applied to the detection of Hg. The emission intensity ratio of the Hg atom to NO (IHg/INO) was analyzed to evaluate the LIBS detection limit because the NO emission (interference signal) was formed during the plasma generation and cooling process of N2 and O2 in the air. It was demonstrated that the enhancement of IHg/INO arose by decreasing the pressure to a few kilopascals, and the IHg/INO of the picosecond breakdown was always much higher than that of the nanosecond breakdown at low buffer gas pressure. Enhancement of IHg/INO increased more than 10 times at 700 Pa using picosecond laser with 35 ps pulse width. The detection limit was enhanced to 0.03 ppm (parts per million). We also saw that the spectra from the center and edge parts of plasma showed different features. Comparing the central spectra with the edge spectra, IHg/INO of the edge spectra was higher than that of the central spectra using the picosecond laser breakdown process.

Organic dielectrics in high voltage cables

Energy Technology Data Exchange (ETDEWEB)

Vermeer, J

1962-03-01

It appears that the limit has been reached in the applicability of oil-impregnated paper as the dielectric for ehv cables, as with rising voltages the prevention of conductor losses becomes increasingly difficult, while the dielectric losses of the insulation, increasing as the square of the voltage, contribute to a greater extent to the temperature rise of the conductor. The power transmitting capacity of ehv cables reaches a maximum at 500 to 600 kV for these reasons. Apart from artificial cooling, a substantial improvement can be obtained only with the use of insulating materials with much lower dielectric losses; these can moreover be applied with a smaller wall thickness, but this means higher field strengths. Synthetic polymer materials meet these requirements but can be used successfully only in the form of lapped film tapes impregnated with suitable liquids. The electrical properties of these heterogeneous dielectrics, in particular, their impulse breakdown strengths are studied in detail.

Dramatically enhanced electrical breakdown strength in cellulose nanopaper

Directory of Open Access Journals (Sweden)

Jianwen Huang

2016-09-01

Full Text Available Electrical breakdown behaviors of nanopaper prepared from nanofibrillated cellulose (NFC were investigated. Compared to conventional insulating paper made from micro softwood fibers, nanopaper has a dramatically enhanced breakdown strength. Breakdown field of nanopaper is 67.7 kV/mm, whereas that of conventional paper is only 20 kV/mm. Air voids in the surface of conventional paper are observed by scanning electron microscope (SEM. Further analyses using mercury intrusion show that pore diameter of conventional paper is around 1.7 μm, while that of nanopaper is below 3 nm. Specific pore size of nanopaper is determined to be approximately 2.8 nm by the gas adsorption technique. In addition, theoretical breakdown strengths of nanopaper and conventional paper are also calculated to evaluate the effect of pore size. It turns out that theoretical values agree well with experimental data, indicating that the improved strength in nanopaper is mainly attributed to the decreased pore size. Due to its outstanding breakdown strength, this study indicates the suitability of nanopaper for electrical insulation in ultra-high voltage convert transformers and other electrical devices.

Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

Science.gov (United States)

Teverovsky, Alexander A.

2011-01-01

the processes under reverse bias conditions. In practice, there were instances when, due to unforeseen events, the system operated at conditions when capacitors experience periodically a relatively small reverse bias for some time followed by normal, forward bias conditions. In such a case an assessment should be made on the degree to which these capacitors are degraded by application of low-voltage reverse bias, and whether this degradation can be reversed by normal operating conditions. In this study, reverse currents in different types of tantalum capacitors were monitored at different reverse voltages below 15%VR and temperatures in the range from room to 145 C for up to 150 hours to get better understanding of the degradation process and determine conditions favorable to the unstable mode of operation. The reversibility of RB degradation has been evaluated after operation of the capacitors at forward bias conditions. The effect of reverse bias stress (RBS) on reliability at normal operating conditions was evaluated using highly accelerated life testing at voltages of 1.5VR and 2 VR and by analysis of changes in distributions of breakdown voltages. Possible mechanisms of RB degradation are discussed.

Radio and television interference caused by corona discharges from high-voltage transmission lines

International Nuclear Information System (INIS)

Sarmadi, M.

1996-01-01

Increase in power utility loads in industrialized countries, as well as developing countries, demands a higher level of transmission line voltage. Radio interference (RI) problems have been determined to be a limiting factor in selecting the size of transmission line conductors. Transmission line noise is primarily caused by corona discharges in the immediate vicinity of the conductor. It has been observed that discharges occur during both half-cycles of the applied voltage, but positive corona is usually predominant at AM radio frequencies range with practical high-voltage and extra high-voltage transmission lines. The corona radio noise effect is highly dependent upon the presence of particles on the surface of the conductor and the increase of the electrical gradient beyond the breakdown value of the air. Therefore, corona radio noise varies significantly with the weather and atmospheric conditions and generally increases by 10 to 30 dB in foul weather

Post-breakdown secondary discharges at the electrode/dielectric interface of a cylindrical barrier discharge

Science.gov (United States)

Carman, Robert; Ward, Barry; Kane, Deborah

2011-10-01

The electrical breakdown characteristics of a double-walled cylindrical dielectric barrier discharge (DBD) lamp with a neon buffer gas under pulsed voltage excitation have been investigated. Following the formation of plasma in the main discharge gap, we have observed secondary breakdown phenomena at the inner and outer mesh electrode/dielectric interfaces under specific operating conditions. Plasma formation at these interfaces is investigated by monitoring the Ozone production rate in controlled flows of ultra high purity oxygen together with the overall electrical voltage-charge characteristics of the lamp. The results show that this secondary breakdown only occurs after the main discharge plasma has been established, and that significant electrical power may be dissipated in generating these spurious secondary plasmas. The results are important with regards to optimising the design and identifying efficient operating regimes of DBD based devices that employ mesh-type or wire/strip electrodes.

Enhancement of breakdown voltage for fully-vertical GaN-on-Si p-n diode by using strained layer superlattice as drift layer

Science.gov (United States)

Mase, Suguru; Hamada, Takeaki; Freedsman, Joseph J.; Egawa, Takashi

2018-06-01

We have demonstrated a vertical GaN-on-Si p-n diode with breakdown voltage (BV) as high as 839 V by using a low Si-doped strained layer superlattice (SLS). The p-n vertical diode fabricated by using the n‑-SLS layer as a part of the drift layer showed a remarkable enhancement in BV, when compared with the conventional n‑-GaN drift layer of similar thickness. The vertical GaN-on-Si p-n diodes with 2.3 μm-thick n‑-GaN drift layer and 3.0 μm-thick n‑-SLS layer exhibited a differential on-resistance of 4.0 Ω · cm2 and a BV of 839 V.

Development of large high-voltage pressure insulators for the Princeton TFTR [Tokamak Fusion Test Reactor] flexible transmission lines

International Nuclear Information System (INIS)

Scalise, D.T.; Fong, E.; Haughian, J.; Prechter, R.

1986-10-01

Specially formulated insulator materials with improved strength and high-voltage properties were developed and used for critical components of the flexible transmission lines to the TFTR neutral beam ion sources. These critical components are plates which support central conductors as they exit the high-voltage power supply and enter the ion source enclosure. Each plate acts both as a high-voltage insulator and as a pressure barrier to the SF 6 insulating gas. The original plate was made of commercial glass-epoxy laminate which limited the plate voltage capacity. The newly developed insulator is made of specially-formulated cycloalphatic Di-epoxide whose isotropic properties exhibit increased arc resistance. It is cast in one piece with skirts which greatly increase the breakdown voltage. This paper discusses the design, fabrication and testing of the new insulator

Breakdown study of dc silicon micro-discharge devices

International Nuclear Information System (INIS)

Schwaederlé, L; Kulsreshath, M K; Lefaucheux, P; Tillocher, T; Dussart, R; Overzet, L J

2012-01-01

The influence of geometrical and operating parameters on the electrical characteristics of dc microcavity discharges provides insight into their controlling physics. We present here results of such a study on silicon-based microcavity discharge devices carried out in helium at pressure ranging from 100 to 1000 Torr. Different micro-reactor configurations were measured. The differences include isolated single cavities versus arrays of closely spaced cavities, various cavity geometries (un-etched as well as isotropically and anisotropically etched), various dimensions (100 or 150 µm cavity diameter and 0-150 µm depth). The electrode gap was kept constant in all cases at approximately 6 µm. The applied electric field reaches 5 × 10 7 V m -1 which results in current and power densities up to 2 A cm -2 and 200 kW cm -3 , respectively. The number of microcavities and the microcavity depth are shown to be the most important geometrical parameters for predicting breakdown and operation of microcavity devices. The probability of initiatory electron generation which is volume dependent and the electric field strength which is depth dependent are, respectively, considered to be responsible. The cavity shape (isotropic/anisotropic) and diameter had no significant influence. The number of micro-discharges that could be ignited depends on the rate of voltage rise and pressure. Larger numbers ignite at lower frequency and pressure. In addition, the voltage polarity has the largest influence on the electrical characteristics of the micro-discharge of all parameters, which is due to both the asymmetric role of electrodes as electron emitter and the non-uniformity of the electric field resulting in different ionization efficiencies. The qualitative shape of all breakdown voltage versus pressure curves can be explained in terms of the distance over which the discharge breakdown effectively occurs as long as one understand that this distance can depend on pressure. (paper)

Influence of ultrasound on the electrical breakdown of transformer oil

Science.gov (United States)

Isakaev, E. Kh; Tyuftyaev, A. S.; Gadzhiev, M. Kh; Demirov, N. A.; Akimov, P. L.

2018-01-01

When the transformer oil is exposed to low power ultrasonic waves (cavitation bubbles. With the increase of sonication time the breakdown voltage also increases, nonlinearly. The experimental data indicate the possibility of using ultrasonic waves of low power for degassing of transformer oil.

A breakdown enhanced AlGaN/GaN MISFET with source-connected P-buried layer

Science.gov (United States)

Luo, Xin; Wang, Ying; Cao, Fei; Yu, Cheng-Hao; Fei, Xin-Xing

2017-12-01

This paper presents a breakdown-enhanced AlGaN/GaN MISFET with a source-connected P-buried layer combined with field plates (SC-PBL FPs MISFET). A TCAD tool was used to analyze the breakdown characteristics of the proposed structure, and results show that in comparison to the conventional gate field plate MISFET (GFP-C MISFET), the proposed structure provides a significant increase of breakdown voltage (VBK) due to redistribution of electric field in the gate-drain region induced by the SC-PBL and the FPs. The optimized SC-PBL FPs MISFET with a gate-drain spacing of 6 μm achieved a high Baliga's figure of merit of 2.6 GW cm-2 with a corresponding breakdown voltage (VBK) of 1311.62 V and specific on resistance (RON,sp) of 0.66 mΩ cm2, which demonstrates a good trade-off between RON,sp and VBK compared to the GFP-C MISFET with VBK of 524.27 V and RON,sp of 0.61 mΩ cm2.

Dielectric breakdown of ultrathin aluminum oxide films induced by scanning tunneling microscopy

International Nuclear Information System (INIS)

Magtoto, N. P.; Niu, C.; Ekstrom, B. M.; Addepalli, S.; Kelber, J. A.

2000-01-01

Dielectric breakdown of 7-Aa-thick Al 2 O 3 (111) films grown on Ni 3 Al(111) under ultrahigh vacuum conditions is induced by increasing the bias voltage on the scanning tunneling microscopy tip under constant current feedback. Breakdown is marked by the precipitous retreat of the tip from the surface, and the formation of an elevated feature in the scanning tunneling microscopy image, typically greater than 5 nm high and ∼100 nm in diameter. Constant height measurements performed at tip/sample distances of 1 nm or less yield no tip/substrate physical interaction, indicating that such features do not result from mass transport. Consistent with this, current/voltage measurements within the affected regions indicate linear behavior, in contrast to a band gap of 1.5 eV observed at unaffected regions of the oxide surface. A threshold electric field value of 11±1 MV cm -1 is required to induce breakdown, in good agreement with extrapolated values from capacitance measurements on thicker oxides. (c) 2000 American Institute of Physics

Off-state electrical breakdown of AlGaN/GaN/Ga(AlN HEMT heterostructure grown on Si(111

Directory of Open Access Journals (Sweden)

Shuiming Li

2016-03-01

Full Text Available Electrical breakdown characteristics of AlxGa1−xN buffer layers grown on Si(111 are investigated by varying the carbon concentration ([C]: from ∼1016 to 1019 cm−3, Al-composition (x = 0 and 7%, and buffer thickness (from 1.6 to 3.1 μm. A quantitative relationship between the growth conditions and carbon concentration ([C] is established, which can guide to grow the Ga(AlN layer with a given [C]. It is found that the carbon incorporation is sensitive to the growth temperature (T (exponential relationship between [C] and 1/T and the improvement of breakdown voltage by increasing [C] is observed to be limited when [C] exceeding 1019 cm−3, which is likely due to carbon self-compensation. By increasing the highly resistive (HR Al0.07Ga0.93N buffer thickness from 1.6 to 3.1 μm, the leakage current is greatly reduced down to 1 μA/mm at a bias voltage of 1000 V.

Breakdown voltage at the electric terminals of GCFR-core flow test loop fuel rod simulators in helium and air

International Nuclear Information System (INIS)

Huntley, W.R.; Conley, T.B.

1979-12-01

Tests were performed to determine the ac and dc breakdown voltage at the terminal ends of a fuel rod simulator (FRS) in helium and air atmospheres. The tests were performed at low pressures (1 to 2 atm) and at temperatures from 20 to 350 0 C (68 to 660 0 F). The area of concern was the 0.64-mm (0.025-in.) gap between the coaxial conductor of the FRS and the sheaths of the four internal thermocouples as they exit the FRS. The tests were prformed to ensure a sufficient safety margin during Core Flow Test Loop (CFTL) operations that require potentials up to 350 V ac at the FRS terminals. The primary conclusion from the test results is that the CFTL cannot be operated safely if the terminal ends of the FRSs are surrounded by a helium atmosphere but can be operated safely in air

Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

International Nuclear Information System (INIS)

Onufriyev, Valery V.

2001-01-01

It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient--γ i with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure p cs ) and cathode temperature T k is constant too (U b =constant with T k =constant and p cs =constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-p cs and cathode temperature-T k and is independent on IEG length--Δ ieg . On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly--the region of excited atoms--''Aston glow.''

Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

Science.gov (United States)

Onufriyev, Valery. V.

2001-02-01

It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient-γi with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure pcs) and cathode temperature Tk is constant too (Ub=constant with Tk=constant and pcs=constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-pcs and cathode temperature-Tk and is independent on IEG length-Δieg. On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly-the region of excited atoms-``Aston glow.'' .

Facilitating breakdown in noble gases at near-atmospheric pressure using antennas

Energy Technology Data Exchange (ETDEWEB)

Sobota, A; Van Veldhuizen, E M; Haverlag, M [Eindhoven University of Technology, Department of Applied Physics, Postbus 513, 5600MB Eindhoven (Netherlands); Gendre, M F; Manders, F, E-mail: a.sobota@tue.nl [Philips Lighting, Mathildelaan 1, 5600JM Eindhoven (Netherlands)

2011-04-20

Electrical breakdown in near-atmospheric pressure noble gases requires voltages that are quite high, which is undesirable for a large number of possible applications. Metallic structures (antennas) were used on the outer side of the lamp burner to enhance the electric field locally while keeping the same potential difference across the electrodes. Optical and electrical measurements were performed in an argon or xenon atmosphere at 0.3 or 0.7 bar, with 4 or 7 mm between the electrode tips. We used rod-shaped tungsten electrodes of 0.6 mm in diameter. We found that both active and passive antennas facilitate breakdown, and we demonstrated the differences between the two types and their effects on the breakdown process.

Facilitating breakdown in noble gases at near-atmospheric pressure using antennas

International Nuclear Information System (INIS)

Sobota, A; Van Veldhuizen, E M; Haverlag, M; Gendre, M F; Manders, F

2011-01-01

Electrical breakdown in near-atmospheric pressure noble gases requires voltages that are quite high, which is undesirable for a large number of possible applications. Metallic structures (antennas) were used on the outer side of the lamp burner to enhance the electric field locally while keeping the same potential difference across the electrodes. Optical and electrical measurements were performed in an argon or xenon atmosphere at 0.3 or 0.7 bar, with 4 or 7 mm between the electrode tips. We used rod-shaped tungsten electrodes of 0.6 mm in diameter. We found that both active and passive antennas facilitate breakdown, and we demonstrated the differences between the two types and their effects on the breakdown process.

Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination

Science.gov (United States)

He, Yan Jing; Lv, Hong Liang; Tang, Xiao Yan; Song, Qing Wen; Zhang, Yi Meng; Han, Chao; Zhang, Yi Men; Zhang, Yu Ming

2017-03-01

A lightly doped P-well field-limiting rings (FLRs) termination on 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors (VDMOSFETs) has been investigated. Based on the simulation, the proposed termination applied to 4H-SiC VDMOSFET could achieve an almost same breakdown voltage (BV) and have the advantage of lower ion-implantation damage comparing with P+ FLRs termination. Meanwhile, this kind of termination also reduces the difficulty and consumption of fabrication process. 4H-SiC VDMOSFETs with lightly doped P-well (FLRs) termination have been fabricated on 10 μm thick epi-layer with nitrogen doping concentration of 6.2 × 1015 cm-3. The maximum breakdown voltage of the 4H-SiC VDMOSFETs has achieved as high as 1610 V at a current of 15 μA, which is very close to the simulated result of 1643 V and about 90% of the plane parallel breakdown voltage of 1780 V. It is considered that P-well FLRs termination is an effective, robust and process-tolerant termination structure suitable for 4H-SiC VDMOSFET.

Influence of current limitation on voltage stability with voltage sourced converter HVDC

DEFF Research Database (Denmark)

Zeni, Lorenzo; Jóhannsson, Hjörtur; Hansen, Anca Daniela

2013-01-01

A first study of voltage stability with relevant amount of Voltage Sourced Converter based High Voltage Direct Current (VSC-HVDC) transmission is presented, with particular focus on the converters’ behaviour when reaching their rated current. The detrimental effect of entering the current...

39GHz ECRH system for breakdown studies on the TCA tokamak

International Nuclear Information System (INIS)

Pochelon, A.; Goodman, T.; Whaley, D.; Tran, M.Q.; Reinhard, D.; Perrenoud, A.; Joedicke, B.; Mathews, H.G.; Kasparek, W.; Thumm, M.

1990-01-01

The design construction and first operation of a 39GHz ECRH system (300 kW, 100 ms) for low loop-voltage breakdown and startup-assist experiments on the TCA tokamak is described. (author) 5 refs., 6 figs., 1 tab

A Study on Gas Insulation Characteristics for Design Optimization of High Voltage Power Apparatus

Energy Technology Data Exchange (ETDEWEB)

Kim, I S; Kim, M K; Seo, K S; Moon, I W; Choi, C K [Korea Electrotechnology Research Institute (Korea, Republic of)

1996-12-01

This study aim of obtaining the basic data for gas insulation in the high voltage apparatus and for investigating the breakdown characteristics in uniform field and non-uniform which the geometric construction in the practical power apparatus. In this study, the research results on the insulation technology published earlier are reviewed and the basic data for an optimum design of a high voltage apparatus are obtained thorough the experiment and computer simulation by using a uniform field. The main result are summarized as follows: (A) Investigation on the insulation technology in a large-capacity power apparatus. (B) Investigation on the breakdown characteristics in particle contaminated condition. (C) Investigation on the design in computer simulation. (D) Investigation on the simulation technology of breakdown characteristics. (E) Investigation on breakdown characteristics in the nonuniform field and experiment. (author). refs., figs., tabs.

dc breakdown conditioning and breakdown rate of metals and metallic alloys under ultrahigh vacuum

Directory of Open Access Journals (Sweden)

A. Descoeudres

2009-03-01

Full Text Available The rf accelerating structures of the Compact Linear Collider (CLIC require a material capable of sustaining high electric field with a low breakdown rate and low induced damage. Because of the similarity of many aspects of dc and rf breakdown, a dc breakdown study is underway at CERN in order to test candidate materials and surface preparations, and have a better understanding of the breakdown mechanism under ultrahigh vacuum in a simple setup. Conditioning speeds and breakdown fields of several metals and alloys have been measured. The average breakdown field after conditioning ranges from 100  MV/m for Al to 850  MV/m for stainless steel, and is around 170  MV/m for Cu which is the present base-line material for CLIC structures. The results indicate clearly that the breakdown field is limited by the cathode. The presence of a thin cuprous oxide film at the surface of copper electrodes significantly increases the breakdown field. On the other hand, the conditioning speed of Mo is improved by removing oxides at the surface with a vacuum heat treatment, typically at 875°C for 2 hours. Surface finishing treatments of Cu samples only affect the very first breakdowns. More generally, surface treatments have an effect on the conditioning process itself, but not on the average breakdown field reached after the conditioning phase. In analogy to rf, the breakdown probability has been measured in dc with Cu and Mo electrodes. The dc data show similar behavior as rf as a function of the applied electric field.

Statistical Studies of the Electric Breakdown in Nitrogen in the Duration Range of 3 ms-60 min

Science.gov (United States)

Gorokhov, V. V.; Karelin, V. I.; Perminov, A. V.; Repin, P. B.

2018-05-01

The statistical characteristics of an electric breakdown in the nitrogen in the spike (cathode)-plane gap in the duration range of (3 × 10-3)-3600 s at voltages close to a static breakdown have been studied. It has been found that a probability of a gap breakdown is nonmonotonously distributed over time. The presence of maxima in the probability distribution confirms a contribution of some processes that both stimulate and suppress a breakdown. The typical times of the processes are 30 ms, 10-1 s, and 300 s.

The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection

Directory of Open Access Journals (Sweden)

Jingyu Shen

2018-01-01

Full Text Available The breakdown characteristics of ultra-thin gate oxide MOS capacitors fabricated in 65 nm CMOS technology under constant voltage stress and substrate hot-carrier injection are investigated. Compared to normal thick gate oxide, the degradation mechanism of time-dependent dielectric breakdown (TDDB of ultra-thin gate oxide is found to be different. It is found that the gate current (Ig of ultra-thin gate oxide MOS capacitor is more likely to be induced not only by Fowler-Nordheim (F-N tunneling electrons, but also by electrons surmounting barrier and penetrating electrons in the condition of constant voltage stress. Moreover it is shown that the time to breakdown (tbd under substrate hot-carrier injection is far less than that under constant voltage stress when the failure criterion is defined as a hard breakdown according to the experimental results. The TDDB mechanism of ultra-thin gate oxide will be detailed. The differences in TDDB characteristics of MOS capacitors induced by constant voltage stress and substrate hot-carrier injection will be also discussed.

Research of Dielectric Breakdown Micro fluidic Sampling Chip

International Nuclear Information System (INIS)

Jiang, F.; Lei, Y.; Yu, J.

2013-01-01

Micro fluidic chip is mainly driven electrically by external electrode and array electrode, but there are certain disadvantages in both of ways, which affect the promotion and application of micro fluidic technology. This paper discusses a scheme that uses the conductive solution in a microchannel made by PDMS, replacing electrodes and the way of dielectric breakdown to achieve microfluidic chip driver. It could reduce the driving voltage and simplify the chip production process. To prove the feasibility of this method, we produced a micro fluidic chip used in PDMS material with the lithography technology and experimented it. The results showed that using the dielectric breakdown to achieve microfluidic chip driver is feasible, and it has certain application prospect.

Novel dielectric reduces corona breakdown in ac capacitors

Science.gov (United States)

Loehner, J. L.

1972-01-01

Dielectric system was developed which consists of two layers of 25-gage paper separated by one layer of 50-gage polypropylene to reduce corona breakdown in ac capacitors. System can be used in any alternating current application where constant voltage does not exceed 400 V rms. With a little research it could probably be increased to 700 to 800 V rms.

Thoughts on Limitation in the Use of Acoustic Sensors in RF Breakdown Localization

Energy Technology Data Exchange (ETDEWEB)

Le Pimpec, F

2004-08-02

X-band accelerator structures, meeting the Next Linear Collider (NLC) design requirements, have been found to suffer damage due to radio frequency (RF) breakdown when processed to high gradients. Improved understanding of these breakdown events is desirable for the development of structure designs, fabrication procedures, and processing techniques that minimize structure damage. Using an array of acoustic sensors, we have been able to pinpoint the location of individual breakdown events. However, a more accurate localization is required to understand the interaction between the phonon or the sound wave with the OFE copper.

Fault Ride-through Capability Enhancement of Voltage Source Converter-High Voltage Direct Current Systems with Bridge Type Fault Current Limiters

Directory of Open Access Journals (Sweden)

Md Shafiul Alam

2017-11-01

Full Text Available This paper proposes the use of bridge type fault current limiters (BFCLs as a potential solution to reduce the impact of fault disturbance on voltage source converter-based high voltage DC (VSC-HVDC systems. Since VSC-HVDC systems are vulnerable to faults, it is essential to enhance the fault ride-through (FRT capability with auxiliary control devices like BFCLs. BFCL controllers have been developed to limit the fault current during the inception of system disturbances. Real and reactive power controllers for the VSC-HVDC have been developed based on current control mode. DC link voltage control has been achieved by a feedback mechanism such that net power exchange with DC link capacitor is zero. A grid-connected VSC-HVDC system and a wind farm integrated VSC-HVDC system along with the proposed BFCL and associated controllers have been implemented in a real time digital simulator (RTDS. Symmetrical three phase as well as different types of unsymmetrical faults have been applied in the systems in order to show the effectiveness of the proposed BFCL solution. DC link voltage fluctuation, machine speed and active power oscillation have been greatly suppressed with the proposed BFCL. Another significant feature of this work is that the performance of the proposed BFCL in VSC-HVDC systems is compared to that of series dynamic braking resistor (SDBR. Comparative results show that the proposed BFCL is superior over SDBR in limiting fault current as well as improving system fault ride through (FRT capability.

Dielectric breakdown and healing of anodic oxide films on aluminium under single pulse anodizing

International Nuclear Information System (INIS)

Sah, Santosh Prasad; Tatsuno, Yasuhiro; Aoki, Yoshitaka; Habazaki, Hiroki

2011-01-01

Research highlights: → We examined dielectric breakdown of anodic alumina by single pulse anodizing. → Current transients and morphology of discharge channels are dependent upon electrolyte and voltage. → There is a good correlation between current transient and morphology of discharge channel. → Healing of open discharge pores occurs in alkaline silicate, but not in pentaborate electrolyte. - Abstract: Single pulse anodizing of aluminium micro-electrode has been employed to study the behaviour of dielectric breakdown and subsequent oxide formation on aluminium in alkaline silicate and pentaborate electrolytes. Current transients during applying pulse voltage have been measured, and surface has been observed by scanning electron microscopy. Two types of current transients are observed, depending on the electrolyte and applied voltage. There is a good correlation between the current transient behaviour and the shape of discharge channels. In alkaline silicate electrolyte, circular open pores are healed by increasing the pulse width, but such healing is not obvious in pentaborate electrolyte.

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

Energy Technology Data Exchange (ETDEWEB)

Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

2016-01-04

This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

A 1.8 V LDO voltage regulator with foldback current limit and thermal protection

International Nuclear Information System (INIS)

Liu Zhiming; Fu Zhongqian; Huang Lu; Xi Tianzuo

2009-01-01

This paper introduces the design of a l.8 V low dropout voltage regulator (LDO) and a foldback current limit circuit which limits the output current to 3 mA when load over-current occurs. The LDO was implemented in a 0.18 μm CMOS technology. The measured result reveals that the LDO's power supply rejection (PSR) is about -58 dB and -54 dB at 20 Hz and 1 kHz respectively, the response time is 4 μs and the quiescent current is 20 μA. The designed LDO regulator can work with a supply voltage down to 2.0 V with a drop-out voltage of 200 mV at a maximum load current of 240 mA. (semiconductor integrated circuits)

Source of high-voltage power supply for ozone generators at glow discharge

International Nuclear Information System (INIS)

Bruev, A.A.; Golota, V.I.; Zavada, L.M.; Taran, G.V.

2000-01-01

High-voltage power supply source on quasi-resonance inverter base which works at direct current regime is described. This source forms 20 kV voltage with 0 - 10 mA current regulation. It protects the source from current break-downs and feeds ozone generators at glow discharge

Low voltage arc formation in railguns

Science.gov (United States)

Hawke, R.S.

1985-08-05

A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

Low voltage varistor ceramics based on SnO2

Indian Academy of Sciences (India)

WINTEC

School of Environmental and Chemical Engineering, Chonbuk National University, Jeonju 561-756, South Korea. † ... et al (2001) compared the grain boundary barrier proper- ... parameter, EB (breakdown voltage), was taken as the field.

Preparation Nano-Structure Polytetrafluoroethylene (PTFE Functional Film on the Cellulose Insulation Polymer and Its Effect on the Breakdown Voltage and Hydrophobicity Properties

Directory of Open Access Journals (Sweden)

Jian Hao

2018-05-01

Full Text Available Cellulose insulation polymer is an important component of oil-paper insulation, which is widely used in power transformer. The weight of the cellulose insulation polymer materials is as high as tens of tons in the larger converter transformer. Excellent performance of oil-paper insulation is very important for ensuring the safe operation of larger converter transformer. An effective way to improve the insulation and the physicochemical property of the oil impregnated insulation pressboard/paper is currently a popular research topic. In this paper, the polytetrafluoroethylene (PTFE functional film was coated on the cellulose insulation pressboard by radio frequency (RF magnetron sputtering to improve its breakdown voltage and the hydrophobicity properties. X-ray photoelectron spectroscopy (XPS results show that the nano-structure PTFE functional film was successfully fabricated on the cellulose insulation pressboard surface. The scanning electron microscopy (SEM and X-ray diffraction (XRD present that the nanoscale size PTFE particles were attached to the pressboard surface and it exists in the amorphous form. Atomic force microscopy (AFM shows that the sputtered pressboard surface is still rough. The rough PTFE functional film and the reduction of the hydrophilic hydroxyl of the surface due to the shielding effect of PTFE improve the breakdown and the hydrophobicity properties of the cellulose insulation pressboard obviously. This paper provides an innovative way to improve the performance of the cellulose insulation polymer.

Study of Dielectric Breakdown Performance of Transformer Oil Based Magnetic Nanofluids

Directory of Open Access Journals (Sweden)

Yuzhen Lv

2017-07-01

Full Text Available Research on the transformer oil-based nanofluids (NFs has been raised expeditiously over the past decade. Although, there is discrepancy in the stated results and inadequate understanding of the mechanisms of improvement of dielectric nanofluids, these nanofluids have emerged as a potential substitute of mineral oils as insulating and heat removal fluids for high voltage equipment. The transformer oil (TO based magnetic fluids (ferrofluids may be regarded as the posterity insulation fluids as they propose inspiring unique prospectus to improve dielectric breakdown strength, as well as heat transfer efficiency, as compared to pure transformer oils. In this work, transformer oil-based magnetic nanofluids (MNFs are prepared by dispersal of Fe3O4 nanoparticles (MNPs into mineral oil as base oil, with various NPs loading from 5 to 80% w/v. The lightning impulse breakdown voltages (BDV measurement was conducted in accordance with IEC 60897 by using needle to sphere electrodes geometry. The test results showed that dispersion of magnetic NPs may improve the insulation strength of MO. With the increment of NPs concentrations, the positive lightning impulse (LI breakdown strength of TO is first raised, up to the highest value at 40% loading, and then tends to decrease at higher concentrations. The outcomes of negative LI breakdown showed that BDV of MNFs, with numerous loadings, were inferior to the breakdown strength of pure MO. The 40% concentration of nanoparticles (optimum concentration was selected, and positive and negative LI breakdown strength was also further studied at different sizes (10 nm, 20 nm, 30 nm and 40 nm of NPs and different electrode gap distances. Augmentation in the BDV of the ferrofluids (FFs is primarily because of dielectric and magnetic features of Fe3O4 nanoaprticles, which act as electron scavengers and decrease the rate of free electrons produced in the ionization process. Research challenges and technical difficulties

Effects of Nanoparticle Materials on Prebreakdown and Breakdown Properties of Transformer Oil

Directory of Open Access Journals (Sweden)

Yuzhen Lv

2018-04-01

Full Text Available In order to reveal the effects of nanoparticle materials on prebreakdown and breakdown properties of transformer oil, three types of nanoparticle materials, including conductive Fe3O4, semiconductive TiO2 and insulating Al2O3 nanoparticles, were prepared with the same size and surface modification. An experimental study on the breakdown strength and prebreakdown streamer propagation characteristics were investigated for transformer oil and three types of nanofluids under positive lightning impulse voltage. The results indicate that the type of nanoparticle materials has a notable impact on breakdown strength and streamer propagation characteristics of transformer oil. Breakdown voltages of nanofluids are markedly increased by 41.3% and 29.8% respectively by the presence of Fe3O4 and TiO2 nanoparticles. Whereas a slight increase of only 7.4% is observed for Al2O3 nanofluid. Moreover, main discharge channels with thicker and denser branches are formed and the streamer propagation velocities are greatly lowered both in Fe3O4 and TiO2 nanofluids, while no obvious change appears in the propagation process of streamers in Al2O3 nanofluid in comparison with that in pure oil. The test results of trap characteristics reveal that the densities of shallow traps both in Fe3O4 and TiO2 nanofluids are much higher than that in Al2O3 nanofluid and pure oil, greatly reducing the distortion of the electric field. Thus, the propagations of positive streamers in the nanofluids are significantly suppressed by Fe3O4 and TiO2 nanoparticles, leading to the improvements of breakdown strength.

An LOD with improved breakdown voltage in full-frame CCD devices

Science.gov (United States)

Banghart, Edmund K.; Stevens, Eric G.; Doan, Hung Q.; Shepherd, John P.; Meisenzahl, Eric J.

2005-02-01

In full-frame image sensors, lateral overflow drain (LOD) structures are typically formed along the vertical CCD shift registers to provide a means for preventing charge blooming in the imager pixels. In a conventional LOD structure, the n-type LOD implant is made through the thin gate dielectric stack in the device active area and adjacent to the thick field oxidation that isolates the vertical CCD columns of the imager. In this paper, a novel LOD structure is described in which the n-type LOD impurities are placed directly under the field oxidation and are, therefore, electrically isolated from the gate electrodes. By reducing the electrical fields that cause breakdown at the silicon surface, this new structure permits a larger amount of n-type impurities to be implanted for the purpose of increasing the LOD conductivity. As a consequence of the improved conductance, the LOD width can be significantly reduced, enabling the design of higher resolution imaging arrays without sacrificing charge capacity in the pixels. Numerical simulations with MEDICI of the LOD leakage current are presented that identify the breakdown mechanism, while three-dimensional solutions to Poisson's equation are used to determine the charge capacity as a function of pixel dimension.

The Effect of Current-Limiting Reactors on the Tripping of Short Circuits in High-Voltage Electrical Equipment

International Nuclear Information System (INIS)

Volkov, M. S.; Gusev, Yu. P.; Monakov, Yu. V.; Cho, Gvan Chun

2016-01-01

The insertion of current-limiting reactors into electrical equipment operating at a voltage of 110 and 220 kV produces a change in the parameters of the transient recovery voltages at the contacts of the circuit breakers for disconnecting short circuits, which could be the reason for the increase in the duration of the short circuit, damage to the electrical equipment and losses in the power system. The results of mathematical modeling of the transients, caused by tripping of the short circuit in a reactive electric power transmission line are presented, and data are given on the negative effect of a current-limiting resistor on the rate of increase and peak value of the transient recovery voltages. Methods of ensuring the standard requirements imposed on the parameters of the transient recovery voltages when using current-limiting reactors in the high-voltage electrical equipment of power plants and substations are proposed and analyzed

A 1.8 V LDO voltage regulator with foldback current limit and thermal protection

Energy Technology Data Exchange (ETDEWEB)

Liu Zhiming; Fu Zhongqian; Huang Lu; Xi Tianzuo, E-mail: zml1985@mail.ustc.edu.c [Department of Electronic Science and Technology, University of Science and Technology of China, Hefei 230027 (China)

2009-08-15

This paper introduces the design of a l.8 V low dropout voltage regulator (LDO) and a foldback current limit circuit which limits the output current to 3 mA when load over-current occurs. The LDO was implemented in a 0.18 {mu}m CMOS technology. The measured result reveals that the LDO's power supply rejection (PSR) is about -58 dB and -54 dB at 20 Hz and 1 kHz respectively, the response time is 4 {mu}s and the quiescent current is 20 {mu}A. The designed LDO regulator can work with a supply voltage down to 2.0 V with a drop-out voltage of 200 mV at a maximum load current of 240 mA. (semiconductor integrated circuits)

Measurement of skeletal muscle collagen breakdown by microdialysis

DEFF Research Database (Denmark)

Miller, B F; Ellis, D; Robinson, M M

2011-01-01

Exercise increases the synthesis of collagen in the extracellular matrix of skeletal muscle. Breakdown of skeletal muscle collagen has not yet been determined because of technical limitations. The purpose of the present study was to use local sampling to determine skeletal muscle collagen breakdown...... collagen breakdown 17–21 h post-exercise, and our measurement of OHP using GC–MS was in agreement with traditional assays....

Study of protection devices against the effects of electric discharges inside a very high voltage generator: the Vivitron accelerator; Etude de dispositifs de protection contre les effets des decharges electriques au sein d`un generateur de tres haute tension: l`accelerateur Vivitron

Energy Technology Data Exchange (ETDEWEB)

Nolot, E

1996-10-31

The Vivitron tandem is a large electrostatic accelerator comprising a Van de Graaff generator designed to reach terminal voltages of around 30 MV. The machine is limited at rather lower nominal voltages (about 20 MV) due to the sensitivity of the insulating column structure to transient overvoltages. These are induced by electrical discharges in compressed SF{sub 6}. This thesis first aims at analysing the fundamental reasons of electrical discharges in order to limit the probability of their occurrence. Then we simulate the transient overvoltages induced and present some improvements which may lead to a stable behaviour of the Vivitron at nominal voltages higher than 20 MV. Initially we deduce discharge onset voltages and actual breakdown field limitations in the different gap geometries from analysis of possible breakdown mechanisms in compressed SF{sub 6}. In a second part, some electrical characteristics of the insulating column structure are measured at high voltage. Fast rising oscillating waves induced by sparking in the Vivitron, along with the associated energies,are determined in the third part. The last part deals with new surge protections of the insulating column structure. Spark gaps with precise onset voltage and optimized shielding electrodes are discussed. ZnO-based varistors designed for operation at very high fields have also been developed in order to reduce transient overvoltage values. (author). 122 refs.

Barrier breakdown mechanism in nano-scale perpendicular magnetic tunnel junctions with ultrathin MgO barrier

Science.gov (United States)

Lv, Hua; Leitao, Diana C.; Hou, Zhiwei; Freitas, Paulo P.; Cardoso, Susana; Kämpfe, Thomas; Müller, Johannes; Langer, Juergen; Wrona, Jerzy

2018-05-01

Recently, the perpendicular magnetic tunnel junctions (p-MTJs) arouse great interest because of its unique features in the application of spin-transfer-torque magnetoresistive random access memory (STT-MRAM), such as low switching current density, good thermal stability and high access speed. In this paper, we investigated current induced switching (CIS) in ultrathin MgO barrier p-MTJs with dimension down to 50 nm. We obtained a CIS perpendicular tunnel magnetoresistance (p-TMR) of 123.9% and 7.0 Ω.μm2 resistance area product (RA) with a critical switching density of 1.4×1010 A/m2 in a 300 nm diameter junction. We observe that the extrinsic breakdown mechanism dominates, since the resistance of our p-MTJs decreases gradually with the increasing current. From the statistical analysis of differently sized p-MTJs, we observe that the breakdown voltage (Vb) of 1.4 V is 2 times the switching voltage (Vs) of 0.7 V and the breakdown process exhibits two different breakdown states, unsteady and steady state. Using Simmons' model, we find that the steady state is related with the barrier height of the MgO layer. Furthermore, our study suggests a more efficient method to evaluate the MTJ stability under high bias rather than measuring Vb. In conclusion, we developed well performant p-MTJs for the use in STT-MRAM and demonstrate the mechanism and control of breakdown in nano-scale ultrathin MgO barrier p-MTJs.

A model of breakdown in parallel-plate detectors

International Nuclear Information System (INIS)

Fonte, P.

1996-01-01

Parallel-plate avalanche chambers (PPAC's) have many desirable properties, such as a fast, large area particle detector. However, the maximum gain is limited by a form of violent breakdown that limits the usefulness of this detector, despite its other evident qualities. The exact nature of this phenomenon is not yet sufficiently clear to sustain possible improvements. A previous experimental study is complemented in the present work by a quantitative model of the breakdown phenomenon in PPAC's, based on the streamer theory. The model reproduces well the peculiar behavior of the external current observed in PPAC's and resistive-plate chambers. Other breakdown properties measured in PPAC's are also well reproduced

RF Breakdown in Normal Conducting Single-Cell Structures

International Nuclear Information System (INIS)

Dolgashev, V.A.; Nantista, C.D.; Tantawi, S.G.; Higashi, Y.; Higo, T.

2006-01-01

Operating accelerating gradient in normal conducting accelerating structures is often limited by rf breakdown. The limit depends on multiple parameters, including input rf power, rf circuit, cavity shape and material. Experimental and theoretical study of the effects of these parameters on the breakdown limit in full scale structures is difficult and costly. We use 11.4 GHz single-cell traveling wave and standing wave accelerating structures for experiments and modeling of rf breakdown behavior. These test structures are designed so that the electromagnetic fields in one cell mimic the fields in prototype multicell structures for the X-band linear collider. Fields elsewhere in the test structures are significantly lower than that of the single cell. The setup uses matched mode converters that launch the circular TM 01 mode into short test structures. The test structures are connected to the mode launchers with vacuum rf flanges. This setup allows economic testing of different cell geometries, cell materials and preparation techniques with short turn-around time. Simple 2D geometry of the test structures simplifies modeling of the breakdown currents and their thermal effects

Experimental and theoretical studies of a high temperature cesium-barium tacitron, with application to low voltage-high current inversion

International Nuclear Information System (INIS)

Murray, C.S.; El-Genk, M.S.

1994-02-01

A low voltage/high current switch refer-red as ''Cs-Ba tacitron'' is studied for use as a dc to ac inverter in high temperature and/or ionizing radiation environments. The operational characteristics of the Cs-Ba tacitron as a switch were investigated experimentally in three modes: (a) breakdown mode, (b) I-V mode, and (c) current modulation mode. Operation parameters measured include switching frequencies up to 20 kHz, hold-off voltages up to 200 V, current densities in excess of 15 A/CM 2 , switch power density of 1 kW/cm 2 , and a switching efficiency in excess of 90 % at collector voltages greater than 30 V. Also, if the discharge current is circuit limited to a value below the maximum thermal emission current density, the voltage drop is constant and below 3 V

High Voltage Performance of the Beam Screen of the LHC Injection Kicker Magnets

CERN Document Server

Barnes, MJ; Bregliozzi, G; Calatroni, S; Costa Pinto, P; Day, H; Ducimetière, L; Kramer, T; Namora, V; Mertens, V; Taborelli, M

2014-01-01

The LHC injection kicker magnets include beam screens to shield the ferrite yokes against wakefields resulting from the high intensity beam. The screening is provided by conductors lodged in the inner wall of a ceramic support tube. The design of the beam screen has been upgraded to overcome limitations and permit LHC operation with increasingly higher bunch intensity and short bunch lengths: the new design also significantly reduces the electric field associated with the screen conductors, decreasing the probability of electrical breakdown. The high voltage conditioning process for the upgraded kicker magnets is presented and discussed. In addition a test setup has been utilized to study flashover, on the inner wall of the ceramic tube, as a function of both applied voltage and vacuum pressure: results from the test setup are presented.

RCRA materials analysis by laser-induced breakdown spectroscopy: Detection limits in soils

International Nuclear Information System (INIS)

Koskelo, A.; Cremers, D.A.

1994-01-01

The goal of the Technical Task Plan (TTP) that this report supports is research, development, testing and evaluation of a portable analyzer for RCRA and other metals. The instrumentation to be built will be used for field-screening of soils. Data quality is expected to be suitable for this purpose. The data presented in this report were acquired to demonstrate the detection limits for laser-induced breakdown spectroscopy (LIBS) of soils using instrument parameters suitable for fieldable instrumentation. The data are not expected to be the best achievable with the high pulse energies available in laboratory lasers. The report presents work to date on the detection limits for several elements in soils using LIBS. The elements targeted in the Technical Task Plan are antimony, arsenic, beryllium, cadmium, chromium, lead, selenium, and zirconium. Data for these elements are presented in this report. Also included are other data of interest to potential customers for the portable LIBS apparatus. These data are for barium, mercury, cesium and strontium. Data for uranium and thorium will be acquired during the tasks geared toward mixed waste characterization

Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate

Science.gov (United States)

Choi, J.-H.; Cho, C.-H.; Cha, H.-Y.

2018-06-01

Gallium oxide (Ga2O3) based vertical Schottky barrier diodes (SBDs) were designed for high voltage switching applications. Since p-type Ga2O3 epitaxy growth or p-type ion implantation technique has not been developed yet, a field plate structure was employed in this study to maximize the breakdown voltage by suppressing the electric field at the anode edge. TCAD simulation was used for the physical analysis of Ga2O3 SBDs from which it was found that careful attention must be paid to the insulator under the field plate. Due to the extremely high breakdown field property of Ga2O3, an insulator with both high permittivity and high breakdown field must be used for the field plate formation.

High voltage research (breakdown strengths of gaseous and liquid insulators). Semiannual report, October 1, 1977--March 31, 1978

International Nuclear Information System (INIS)

Christophorou, L.G.; James, D.R.; Pai, R.Y.; Mathis, R.A.; Sauers, I.; Pace, M.O.; Bouldin, D.W.; Christodoulides, A.A.; Chan, C.C.

1978-06-01

The work on gas mixtures is focused on combinations of gases consisting of strongly electron-attaching components and one or more electron slowing-down components. Hypotheses based on the positions of electronically excited states are borne out experimentally in the low pressure ( 6 . Although the ionization cross section for Ar is very much greater than that for Ne, Ar is a superior buffer gas. A theoretical discussion is given which describes the relation between the dielectric strength of a gas to its physical parameters including the electron attachment cross section, the ionization cross section, the ionization potential, and the electron energy distribution function. Also discussed is the importance of perfluorination in hydrocarbons to effect an increase in the electron attachment cross section and electron affinity and a decrease in the ionization cross section, and hence an increase in dielectric strength. Attachment rates were measured as a function of the mean electron energy for a comprehensive list of perfluorocarbons. Breakdown voltages were determined for SF 6 and for SF 6 (20%)/N 2 (80%) as a function of temperature from -15 0 C to 85 0 C. Environmental aspects of gas dielectrics pertaining to gas decomposition and toxicity were studied

High voltage research (breakdown strengths of gaseous and liquid insulators). Semiannual report, October 1, 1977--March 31, 1978. [Summaries of research activities at Oak Ridge National Laboratory

Energy Technology Data Exchange (ETDEWEB)

Christophorou, L.G.; James, D.R.; Pai, R.Y.; Mathis, R.A.; Sauers, I.; Pace, M.O.; Bouldin, D.W.; Christodoulides, A.A.; Chan, C.C.

1978-06-01

The work on gas mixtures is focused on combinations of gases consisting of strongly electron-attaching components and one or more electron slowing-down components. Hypotheses based on the positions of electronically excited states are borne out experimentally in the low pressure (<1000 torr) breakdown measurements. The high pressure work shows dramatically the importance of the electron scattering cross section on breakdown strength by comparing Ar with Ne as single gases and in mixtures with SF/sub 6/. Although the ionization cross section for Ar is very much greater than that for Ne, Ar is a superior buffer gas. A theoretical discussion is given which describes the relation between the dielectric strength of a gas to its physical parameters including the electron attachment cross section, the ionization cross section, the ionization potential, and the electron energy distribution function. Also discussed is the importance of perfluorination in hydrocarbons to effect an increase in the electron attachment cross section and electron affinity and a decrease in the ionization cross section, and hence an increase in dielectric strength. Attachment rates were measured as a function of the mean electron energy for a comprehensive list of perfluorocarbons. Breakdown voltages were determined for SF/sub 6/ and for SF/sub 6/ (20%)/N/sub 2/(80%) as a function of temperature from -15/sup 0/C to 85/sup 0/C. Environmental aspects of gas dielectrics pertaining to gas decomposition and toxicity were studied.

Improving Breakdown Behavior by Substrate Bias in a Novel Double Epi-layer Lateral Double Diffused MOS Transistor

International Nuclear Information System (INIS)

Li Qi; Wang Wei-Dong; Liu Yun; Wei Xue-Ming

2012-01-01

A new lateral double diffused MOS (LDMOS) transistor with a double epitaxial layer formed by an n-type substrate and a p-type epitaxial layer is reported (DEL LDMOS). The mechanism of the improved breakdown characteristic is that the high electric field around the drain is reduced by substrate reverse bias, which causes the redistribution of the bulk electric field in the drift region, and the vertical blocking voltage is shared by the drain side and the source side. The numerical results indicate that the trade-off between breakdown voltage and on-resistance of the proposed device is improved greatly in comparison to that of the conventional LDMOS. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Atomic and molecular physics, physicochemical properties of biologically important structure, and high-voltage research

International Nuclear Information System (INIS)

Christophorou, L.G.; Allen, J.D.; Anderson, V.E.

1976-01-01

Research in atomic and molecular physics is reported. Studies included: experimental evidence for the existence of a Ramsauer-Townsend minimum in liquid methane and liquid argon; discovery of a Ramsauer-Townsend minimum in gaseous ethane and propane; motion of thermal electrons in n-alkane vapors; electron mobilities in high pressure gases; electron capture and drift in liquid media; electron attachment to molecules in dense gases; attachment of slow electrons to hexafluorobenzene; fragmentation of atmospheric halocarbons under electron impact; negative ion resonances and threshold electron excitation spectra of organic molecules; theoretical studies of negative-ion resonance states of organic molecules; kinetics of electron capture by sulfur hexafluoride in solution; interactions of slow electrons with benzene and benzene derivatives; Stokes and anti-Stokes fluorescence of 1 : 12-benzoperylene in solution; photoionization of molecules in liquid media; construction of high-voltage breakdown apparatus for gaseous insulation studies; measurements of the breakdown strengths of gaseous insulators and their relation to basic electron-collision processes; accuracy of the breakdown voltage measurements; and assembling basic data on electronegative gases of significance to breakdown

Effects of Photovoltaic and Fuel Cell Hybrid System on Distribution Network Considering the Voltage Limits

Directory of Open Access Journals (Sweden)

ABYANEH, H. A.

2010-11-01

Full Text Available Development of distribution network and power consumption growth, increase voltage drop on the line impedance and therefore voltage drop in system buses. In some cases consumption is so high that voltage in some buses exceed from standard. In this paper, effect of the fuel cell and photovoltaic hybrid system on distribution network for solving expressed problem is studied. For determining the capacity of each distributed generation source, voltage limitation on the bus voltages under different conditions is considered. Simulation is done by using DIgSILENT software on the part of the 20 kV real life Sirjan distribution system. In this article, optimum location with regard to system and environmental conditions are studied in two different viewpoints.

Piezoelectric transformers for low-voltage generation of gas discharges and ionic winds in atmospheric air

Energy Technology Data Exchange (ETDEWEB)

Johnson, Michael J. [Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States); Go, David B., E-mail: dgo@nd.edu [Department of Aerospace and Mechanical Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States); Department of Chemical and Biomolecular Engineering, University of Notre Dame, Notre Dame, Indianapolis 46556 (United States)

2015-12-28

To generate a gas discharge (plasma) in atmospheric air requires an electric field that exceeds the breakdown threshold of ∼30 kV/cm. Because of safety, size, or cost constraints, the large applied voltages required to generate such fields are often prohibitive for portable applications. In this work, piezoelectric transformers are used to amplify a low input applied voltage (<30 V) to generate breakdown in air without the need for conventional high-voltage electrical equipment. Piezoelectric transformers (PTs) use their inherent electromechanical resonance to produce a voltage amplification, such that the surface of the piezoelectric exhibits a large surface voltage that can generate corona-like discharges on its corners or on adjacent electrodes. In the proper configuration, these discharges can be used to generate a bulk air flow called an ionic wind. In this work, PT-driven discharges are characterized by measuring the discharge current and the velocity of the induced ionic wind with ionic winds generated using input voltages as low as 7 V. The characteristics of the discharge change as the input voltage increases; this modifies the resonance of the system and subsequent required operating parameters.

Breakdown in ZnO Varistors by High Power Electrical Pulses; TOPICAL

International Nuclear Information System (INIS)

PIKE, GORDON E.

2001-01-01

This report documents an investigation of irreversible electrical breakdown in ZnO varistors due to short pulses of high electric field and current density. For those varistors that suffer breakdown, there is a monotonic, pulse-by-pulse degradation in the switching electric field. The electrical and structural characteristics of varistors during and after breakdown are described qualitatively and quantitatively. Once breakdown is nucleated, the degradation typically follows a well-defined relationship between the number of post-initiation pulses and the degraded switching voltage. In some cases the degraded varistor has a remnant 20(micro)m diameter hollow track showing strong evidence of once-molten ZnO. A model is developed for both electrical and thermal effects during high energy pulsing. The breakdown is assumed to start at one electrode and advance towards the other electrode as a thin filament of conductive material that grows incrementally with each successive pulse. The model is partially validated by experiments in which the varistor rod is cut at several different lengths from the electrode. Invariably one section of the cut varistor has a switching field that is not degraded while the other section(s) are heavily degraded. Based on the experiments and models of behavior during breakdown, some speculations about the nature of the nucleating mechanism are offered in the last section

Enhanced shock wave generation via pre-breakdown acceleration using water electrolysis in negative streamer pulsed spark discharges

Science.gov (United States)

Lee, Kern; Chung, Kyoung-Jae; Hwang, Y. S.

2018-03-01

This paper presents a method for enhancement of shock waves generated from underwater pulsed spark discharges with negative (anode-directed) subsonic streamers, for which the pre-breakdown process is accelerated by preconditioning a gap with water electrolysis. Hydrogen microbubbles are produced at the cathode by the electrolysis and move towards the anode during the preconditioning phase. The numbers and spatial distributions of the microbubbles vary with the amplitude and duration of each preconditioning pulse. Under our experimental conditions, the optimum pulse duration is determined to be ˜250 ms at a pulse voltage of 400 V, where the buoyancy force overwhelms the electric force and causes the microbubbles to be swept out from the water gap. When a high-voltage pulse is applied to the gap just after the preconditioning pulse, the pre-breakdown process is significantly accelerated in the presence of the microbubbles. At the optimum preconditioning pulse duration, the average breakdown delay is reduced by 87% and, more importantly, the energy consumed during the pre-breakdown period decreases by 83%. This reduced energy consumption during the pre-breakdown period, when combined with the morphological advantages of negative streamers, such as thicker and longer stalks, leads to a significant improvement in the measured peak pressure (˜40%) generated by the underwater pulsed spark discharge. This acceleration of pre-breakdown using electrolysis overcomes the biggest drawback of negative subsonic discharges, which is slow vapor bubble formation due to screening effects, and thus enhances the efficiency of the shock wave generation process using pulsed spark discharges in water.

Dielectric-breakdown tests of water at 6 MV

Directory of Open Access Journals (Sweden)

W. A. Stygar

2009-01-01

Full Text Available We have conducted dielectric-breakdown tests on water subject to a single unipolar pulse. The peak voltages used for the tests range from 5.8 to 6.8 MV; the effective pulse widths range from 0.60 to 1.1  μs; and the effective areas tested range from 1.8×10^{5} to 3.6×10^{6}  cm^{2}. The tests were conducted on water-insulated coaxial capacitors. The two electrodes of each capacitor have outer and inner radii of 99 and 56 cm, respectively. Results of the tests are consistent with predictions of the water-dielectric-breakdown relation developed in [Phys. Rev. ST Accel. Beams 9, 070401 (2006PRABFM1098-440210.1103/PhysRevSTAB.9.070401].

High gradient RF breakdown study

International Nuclear Information System (INIS)

Laurent, L.; Luhmann, N.C. Jr.; Scheitrum, G.; Hanna, S.; Pearson, C.; Phillips, R.

1998-01-01

Stanford Linear Accelerator Center and UC Davis have been investigating high gradient RF breakdown and its effects on pulse shortening in high energy microwave devices. RF breakdown is a critical issue in the development of high power microwave sources and next generation linear accelerators since it limits the output power of microwave sources and the accelerating gradient of linacs. The motivation of this research is to find methods to increase the breakdown threshold level in X-band structures by reducing dark current. Emphasis is focused on improved materials, surface finish, and cleanliness. The test platform for this research is a traveling wave resonant ring. A 30 MW klystron is employed to provide up to 300 MW of traveling wave power in the ring to trigger breakdown in the cavity. Five TM 01 cavities have previously been tested, each with a different combination of surface polish and/or coating. The onset of breakdown was extended up to 250 MV/m with a TiN surface finish, as compared to 210 MV/m for uncoated OFE copper. Although the TiN coating was helpful in depressing the field emission, the lowest dark current was obtained with a 1 microinch surface finish, single-point diamond-turned cavity

Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron mobility transistors

Science.gov (United States)

Yamazaki, Taisei; Asubar, Joel T.; Tokuda, Hirokuni; Kuzuhara, Masaaki

2018-05-01

We investigated the impact of rounded electrode corners on the breakdown characteristics of AlGaN/GaN high-electron mobility transistors. For standard reference devices, catastrophic breakdown occurred predominantly near the sharp electrode corners. By introducing a rounded-electrode architecture, premature breakdown at the corners was mitigated. Moreover, the rate of breakdown voltage (V BR) degradation with an increasing gate width (W G) was significantly lower for devices with rounded corners. When W G was increased from 100 µm to 10 mm, the V BR of the reference device dropped drastically, from 1,200 to 300 V, whereas that of the rounded-electrode device only decreased to a respectable value of 730 V.

Quenching gases for limited-streamer operation

Energy Technology Data Exchange (ETDEWEB)

Rapp, P

1986-04-01

Charge spectra and efficiencies of the limited-streamer mode are presented as a function of quencher fraction and high voltage for several gas mixes. The goal was to find a working gas of low hydrocarbon content in order to relieve safety concerns about the flammability of the large gas volume contained in the hadron calorimeter of the OPAL detector at LEP. No suitable low-hydrocarbon quenching mix is found. The charge spectra from these quenchers develop secondary peaks and long tails as full efficiency is approached, leading to catastrophic breakdown near the onset of full efficiency.

Quenching gases for limited-streamer operation

Energy Technology Data Exchange (ETDEWEB)

Rapp, P

1986-04-01

Charge spectra and efficiencies of the limited-streamer mode are presented as a function of quencher fraction and high voltage for several gas mixes. The goal was to find a working gas of low hydrocarbon content in order to relieve safety concerns about the flammability of the large gas volume contained in the hadron calorimeter of the OPAL detector at LEP. No suitable low-hydrocarbon quenching mix is found. The charge spectra from these quenchers develop secondary peaks and long tails as full efficiency is approached, leading to catastrophic breakdown near the onset of full efficiency. (orig.).

Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

2016-01-04

In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

Calculations for high voltage insulators and conductors with computer aided design and transient voltage simulations engineering for a large electrostatic accelerator

Energy Technology Data Exchange (ETDEWEB)

Osswald, F.; Roumie, M.; Frick, G.; Heusch, B.

1994-11-01

Calculations have been made to increase the high voltage performance of some components and to explain electrical failures of the Vivitron. These involve simulations of static stresses and transient over voltages, especially on insulating boards and electrodes occurring before or during breakdowns. Developments made to the structure of the machine over the last years and new ideas to improve the static and dynamic behaviour are presented. The application of this study and HV tests led recently to a nominal potential near 20 MV without sparks. (author). 49 refs., 25 figs., 2 tabs.

Calculations for high voltage insulators and conductors with computer aided design and transient voltage simulations engineering for a large electrostatic accelerator

International Nuclear Information System (INIS)

Osswald, F.; Roumie, M.; Frick, G.; Heusch, B.

1994-11-01

Calculations have been made to increase the high voltage performance of some components and to explain electrical failures of the Vivitron. These involve simulations of static stresses and transient over voltages, especially on insulating boards and electrodes occurring before or during breakdowns. Developments made to the structure of the machine over the last years and new ideas to improve the static and dynamic behaviour are presented. The application of this study and HV tests led recently to a nominal potential near 20 MV without sparks. (author). 49 refs., 25 figs., 2 tabs

RF Breakdown in Normal Conducting Single-cell Structures

CERN Document Server

Dolgashev, Valery A; Higo, Toshiyasu; Nantista, Christopher D; Tantawi, Sami G

2005-01-01

Operating accelerating gradient in normal conducting accelerating structures is often limited by rf breakdown. The limit depends on multiple parameters, including input rf power, rf circuit, cavity shape and material. Experimental and theoretical study of the effects of these parameters on the breakdown limit in full scale structures is difficult and costly. We use 11.4 GHz single-cell traveling wave and standing wave accelerating structures for experiments and modeling of rf breakdown behavior. These test structures are designed so that the electromagnetic fields in one cell mimic the fields in prototype multicell structures for the X-band linear collider. Fields elsewhere in the test structures are significantly lower than that of the single cell. The setup uses matched mode converters that launch the circular TM01 mode into short test structures. The test structures are connected to the mode launchers with vacuum rf flanges. This setup allows economic testing of different cell geometries, cell materials an...

An Improved Control Strategy of Limiting the DC-Link Voltage Fluctuation for a Doubly Fed Induction Wind Generator

DEFF Research Database (Denmark)

Yao, J.; Li, H.; Liao, Y.

2008-01-01

The paper presents to develop a new control strategy of limiting the dc-link voltage fluctuation for a back-to-back pulsewidth modulation converter in a doubly fed induction generator (DFIG) for wind turbine systems. The reasons of dc-link voltage fluctuation are analyzed. An improved control...... strategy with the instantaneous rotor power feedback is proposed to limit the fluctuation range of the dc-link voltage. An experimental rig is set up to valid the proposed strategy, and the dynamic performances of the DFIG are compared with the traditional control method under a constant grid voltage....... Furthermore, the capabilities of keeping the dc-link voltage stable are also compared in the ride-through control of DFIG during a three-phase grid fault, by using a developed 2 MW DFIG wind power system model. Both the experimental and simulation results have shown that the proposed control strategy is more...

An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS

International Nuclear Information System (INIS)

Hu Xia-Rong; Lü Rui

2014-01-01

In this paper, an analytical model for the vertical electric field distribution and optimization of a high voltage-reduced bulk field (REBULF) lateral double-diffused metal—oxide-semiconductor (LDMOS) transistor is presented. The dependences of the breakdown voltage on the buried n-layer depth, thickness, and doping concentration are discussed in detail. The REBULF criterion and the optimal vertical electric field distribution condition are derived on the basis of the optimization of the electric field distribution. The breakdown voltage of the REBULF LDMOS transistor is always higher than that of a single reduced surface field (RESURF) LDMOS transistor, and both analytical and numerical results show that it is better to make a thick n-layer buried deep into the p-substrate. (interdisciplinary physics and related areas of science and technology)

Comparative Studies of High-Gradient Rf and Dc Breakdowns

CERN Document Server

Kovermann, Jan Wilhelm; Wuensch, Walter

2010-01-01

The CLIC project is based on normal-conducting high-gradient accelerating structures with an average accelerating gradient of 100 MV/m. The maximum achievable gradient in these structures is limited by the breakdown phenomenon. The physics of breakdowns is not yet fully understood quantitatively. A full knowledge could have strong impact on the design, material choice and construction of rf structures. Therefore, understanding breakdowns has great importance to reaching a gradient of 100MV/m with an acceptable breakdown probability. This thesis addresses the physics underlying the breakdown effect, focusing on a comparison of breakdowns in rf structures and in a dc spark setup. The dc system is simpler, easier to benchmark against simulations, with a faster turnaround time, but the relationship to rf breakdown must be established. To do so, an experimental approach based on optical diagnostics and electrical measurements methods was made. Following an introduction into the CLIC project, a general theoretical ...

Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

International Nuclear Information System (INIS)

Mao Wei; Fan Ju-Sheng; Du Ming; Zhang Jin-Feng; Zheng Xue-Feng; Wang Chong; Ma Xiao-Hua; Zhang Jin-Cheng; Hao Yue

2016-01-01

A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications. (paper)

High voltage investigations for ITER coils

International Nuclear Information System (INIS)

Fink, S.; Fietz, W.H.

2006-01-01

The superconducting ITER magnets will be excited with high voltage during operation and fast discharge. Because the coils are complex systems the internal voltage distribution can differ to a large extent from the ideal linear voltage distribution. In case of fast excitations internal voltages between conductor and radial plate of a TF coil can be even higher than the terminal voltage of 3.5 kV to ground which appears during a fast discharge without a fault. Hence the determination of the transient voltage distribution is important for a proper insulation co-ordination and will provide a necessary basis for the verification of the individual insulation design and the choice of test voltages and waveforms. Especially the extent of internal overvoltages in case of failures, e. g. malfunction of discharge units and / or arcing is of special interest. Transient calculations for the ITER TF coil system have been performed for fast discharge and fault scenarios to define test voltages for ITER TF. The conductor and radial plate insulation of the ITER TF Model Coil were exposed at room temperature to test voltages derived from the results from these calculations. Breakdown appeared during the highest AC voltage step. A fault scenario for the TF fast discharge system is presented where one fault triggers a second fault, leading to considerable voltage stress. In addition a FEM model of Poloidal Field Coil 3 for the determination of the parameters of a detailed network model is presented in order to prepare detailed investigations of the transient voltage behaviour of the PF coils. (author)

Analysis of Paralleling Limited Capacity Voltage Sources by Projective Geometry Method

Directory of Open Access Journals (Sweden)

Alexandr Penin

2014-01-01

Full Text Available The droop current-sharing method for voltage sources of a limited capacity is considered. Influence of equalizing resistors and load resistor is investigated on uniform distribution of relative values of currents when the actual loading corresponds to the capacity of a concrete source. Novel concepts for quantitative representation of operating regimes of sources are entered with use of projective geometry method.

Partial discharges and breakdown in C3F8

International Nuclear Information System (INIS)

Koch, M; Franck, C M

2014-01-01

Traditional search processes of gases or gas mixtures for replacing SF 6 involve time consuming measurements of partial discharges and breakdown behaviour for several voltage waveforms and different field configurations. Recently a model for prediction of this behaviour for SF 6 was described in literature. The model only requires basic properties of the gas such as the critical field strength and the effective ionization coefficient, which can be obtained by swarm parameter measurements, and thermodynamic properties, which can be calculated. In this paper, we show for the well-known and electronegative gas octafluoropropane (C 3 F 8 ) that it is possible to transfer the model developed for SF 6 to this gas to describe the breakdown behaviour of C 3 F 8 . Thus the model can be beneficial in the screening process of new insulation gases. (paper)

Partial discharges and breakdown in C3F8

Science.gov (United States)

Koch, M.; Franck, C. M.

2014-10-01

Traditional search processes of gases or gas mixtures for replacing SF6 involve time consuming measurements of partial discharges and breakdown behaviour for several voltage waveforms and different field configurations. Recently a model for prediction of this behaviour for SF6 was described in literature. The model only requires basic properties of the gas such as the critical field strength and the effective ionization coefficient, which can be obtained by swarm parameter measurements, and thermodynamic properties, which can be calculated. In this paper, we show for the well-known and electronegative gas octafluoropropane (C3F8) that it is possible to transfer the model developed for SF6 to this gas to describe the breakdown behaviour of C3F8. Thus the model can be beneficial in the screening process of new insulation gases.

A novel high voltage start up circuit for an integrated switched mode power supply

Energy Technology Data Exchange (ETDEWEB)

Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2010-09-15

A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

The influence of Ac parameters in the process of micro-arc oxidation film electric breakdown

Directory of Open Access Journals (Sweden)

Ma Jin

2016-01-01

Full Text Available This paper studies the electric breakdown discharge process of micro-arc oxidation film on the surface of aluminum alloy. Based on the analysis of the AC parameters variation in the micro-arc oxidation process, the following conclusions can be drawn: The growth of oxide film can be divided into three stages, and Oxide film breakdown discharge occurs twice in the micro-arc oxidation process. The first stage is the formation and disruptive discharge of amorphous oxide film, producing the ceramic oxide granules, which belong to solid dielectric breakdown. In this stage the membrane voltage of the oxide film plays a key role; the second stage is the formation of ceramic oxide film, the ceramic oxide granules turns into porous structure oxide film in this stage; the third stage is the growth of ceramic oxide film, the gas film that forms in the oxide film’s porous structure is electric broken-down, which is the second breakdown discharge process, the current density on the oxide film surface could affect the breakdown process significantly.

A Thermal Runaway Failure Model for Low-Voltage BME Ceramic Capacitors with Defects

Science.gov (United States)

Teverovsky, Alexander

2017-01-01

Reliability of base metal electrode (BME) multilayer ceramic capacitors (MLCCs) that until recently were used mostly in commercial applications, have been improved substantially by using new materials and processes. Currently, the inception of intrinsic wear-out failures in high quality capacitors became much greater than the mission duration in most high-reliability applications. However, in capacitors with defects degradation processes might accelerate substantially and cause infant mortality failures. In this work, a physical model that relates the presence of defects to reduction of breakdown voltages and decreasing times to failure has been suggested. The effect of the defect size has been analyzed using a thermal runaway model of failures. Adequacy of highly accelerated life testing (HALT) to predict reliability at normal operating conditions and limitations of voltage acceleration are considered. The applicability of the model to BME capacitors with cracks is discussed and validated experimentally.

Analysis of breakdown on thermal and electrical measurements for SPIDER accelerating grids

Energy Technology Data Exchange (ETDEWEB)

Pesce, Alberto, E-mail: alberto.pesce@igi.cnr.it [Consorzio RFX - Associazione EURATOM-ENEA per la fusione, Corso Stati Uniti 4, 35127 Padova (Italy); Pomaro, Nicola [Consorzio RFX - Associazione EURATOM-ENEA per la fusione, Corso Stati Uniti 4, 35127 Padova (Italy)

2011-10-15

The PRIMA test facility, under realization in Padova, includes a full size plasma source prototype for ITER, called SPIDER (Source for the Production of Ions of Deuterium Extracted from Radio Frequency plasma). The effects of breakdown in the electrical insulation inside the ion source are analyzed with particular care to the embedded diagnostic system, i.e. the thermal and electrical measurements installed on the grids and ion source case and transferred by multipolar cables to the acquisition system, located inside the 100 kV insulated deck and hosting the ion source power supply, the signal conditioning and the acquisition cubicles. The breakdown affects strongly the measurements, so it has to be mitigated in order to guarantee adequate reliability of the whole measurement set. A parametric study has been carried out on a detailed circuital model for fast transients, implemented using SimPowerSystems{sup TM} tool of Matlab Simulink code. The model includes all the relevant conductors of the subsystems downstream the insulating transformer of the Accelerating Grids Power Supply (AGPS), i.e. the AGPS rectifier, the multipolar transmission line, the 100 kV High Voltage Deck, the ion source power supply and the ion source itself. In particular all the magnetic and capacitive couplings have been computed by a proper 2D fem model. The optimization of the cabling layout, of the wire screening and of the protection devices, like surge arresters and resistors, has been carried out through the accurate modeling of the circuit. The energy dissipated on each ion source surge arrester is estimated and adequate TSD (transient suppression devices) are selected. A peculiar and difficult to satisfy requirement is the high number of surges that the TSD has to withstand. Breakdowns between components polarized at different voltages have been considered, in order to inspect the worst condition during a breakdown.

Optimizing real power loss and voltage stability limit of a large transmission network using firefly algorithm

Directory of Open Access Journals (Sweden)

P. Balachennaiah

2016-06-01

Full Text Available This paper proposes a Firefly algorithm based technique to optimize the control variables for simultaneous optimization of real power loss and voltage stability limit of the transmission system. Mathematically, this issue can be formulated as nonlinear equality and inequality constrained optimization problem with an objective function integrating both real power loss and voltage stability limit. Transformers taps, unified power flow controller and its parameters have been included as control variables in the problem formulation. The effectiveness of the proposed algorithm has been tested on New England 39-bus system. Simulation results obtained with the proposed algorithm are compared with the real coded genetic algorithm for single objective of real power loss minimization and multi-objective of real power loss minimization and voltage stability limit maximization. Also, a classical optimization method known as interior point successive linear programming technique is considered here to compare the results of firefly algorithm for single objective of real power loss minimization. Simulation results confirm the potentiality of the proposed algorithm in solving optimization problems.

Advances in high voltage insulation and arc interruption in SF6 and vacuum

CERN Document Server

Maller, V N

1982-01-01

Advances in High Voltage Insulation and Arc Interruption in SF6 and Vacuum deals with high voltage breakdown and arc extinction in sulfur hexafluoride (SF6) and high vacuum, with special emphasis on the application of these insulating media in high voltage power apparatus and devices. The design and developmental aspects of various high voltage power apparatus using SF6 and high vacuum are highlighted. This book is comprised of eight chapters and opens with a discussion on electrical discharges in SF6 and high vacuum, along with the properties and handling of SF6 gas. The following chapters fo

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

International Nuclear Information System (INIS)

Duan Bao-Xing; Yang Yin-Tang

2012-01-01

In this paper, two-dimensional electron gas (2DEG) regions in AlGaN/GaN high electron mobility transistors (HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time. A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge. The high electric field near the gate for the complete silicon doping structure is effectively decreased, which makes the surface electric field uniform. The high electric field peak near the drain results from the potential difference between the surface and the depletion regions. Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer. The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain. The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Design considerations and data for gas-insulated high voltage structures

International Nuclear Information System (INIS)

Hopkins, D.B.

1975-11-01

This paper is intended to benefit the person faced with the occasional task of designing gas insulated high-voltage structures or spark gaps and who must decide upon the proper geometry, spacings, gas type, and pressure for reliable voltage-holding. An approach is presented along with a summary of how various factors affect voltage breakdown. The design procedures described apply to situations where the influence of nearby insulators is negligible. The accuracy of the data is estimated to be within 10 to 15 percent, a value usually attained in practice only when one follows the cautionary advice discussed in the paragraphs on materials preparation, gas properties, and conditioning

High power thyristors with 5 kV blocking voltage. Volume 1: Development of high-voltage-thyristors (4.5 kV) with good dynamic properties

Science.gov (United States)

Lock, K.; Patalong, H.; Platzoeder, K.

1979-01-01

Using neutron irradiated silicon with considerably lower spread in resistivity as compared to conventionally doped silicon it was possible to produce power thyristors with breakdown voltages between 3.5 kV and 5.5 kV. The thyristor pellets have a diameter of 50 mm. Maximum average on-state currents of 600 to 800 A can be reached with these elements. The dynamic properties of the thryistors could be improved to allow standard applications up to maximum repetitive voltages of 4.5 kV.

Formation of vortex breakdown in conical–cylindrical cavities

International Nuclear Information System (INIS)

Martins, Diego Alves de Moro; Souza, Francisco José de; Salvo, Ricardo de Vasconcelos

2014-01-01

Highlights: • Rotating flows in conical–cylindrical cavities were simulated via an in-house code using unstructured meshes. • The vortex breakdown phenomenon was verified in the geometries analyzed. • The influence of Stewartson and Bödewadt layers was observed in the vortex breakdown formation. • A curve of stability and number of breakdowns was obtained as a function of Reynolds number. • Spiral vortex breakdown was observed in some situations. - Abstract: Numerical simulations in confined rotating flows were performed in this work, in order to verify and characterize the formation of the vortex breakdown phenomenon. Cylindrical and conical–cylindrical geometries, both closed, were used in the simulations. The rotating flow is induced by the bottom wall, which rotates at constant angular velocity. Firstly the numerical results were compared to experimental results available in references, with the purpose to verify the capacity of the computational code to predict the vortex breakdown phenomenon. Further, several simulations varying the parameters which govern the characteristics of the flows analyzed in this work, i.e., the Reynolds number and the aspect ratio, were performed. In these simulations, the limits for the transitional regime and the vortex breakdown formation were verified. Steady and transient cases, with and without turbulence modeling, were simulated. In general, some aspects of the process of vortex breakdown in conical–cylindrical geometries were observed to be different from that in cylinders

Modelling, development and optimization of integrated power LDMOS transistor. Performance limits in terms of energy; Modelisation, conception et optimisation de composant de puissance lateral DMOS integre. Etude des limites de performance en energie

Energy Technology Data Exchange (ETDEWEB)

Farenc, D.

1997-12-16

Technologies for Smart Power Integrated Circuits combine into a single chip Bipolar and CMOS transistors, plus power with lateral or vertical DMOS transistors. Complexity which has been increasing dramatically since the mid-80`s has allowed to integrate, into a single monolithic solution, entire systems. This thesis deals with the modelling, conception and test of the power integrated LDMOS transistor. The power LDMOS transistor is used as a switching device. It is characterized by two parameters which are the Specific On-resistance R{sub sp} and the breakdown voltage BV{sub DSS}. The LDMOS transistor developed for the new Smart Power technology exhibits a Specific On-resistance of 200 m{Omega}{sup *}mm{sup 2} and a breakdown voltage of 60 V. This device is dedicated to automotive applications. A reduction of the power device which is achieved with a low Specific On-resistance puts forward new issues such as the maximum Energy capability. When the power device is switched-off on an inductive load, a certain amount of energy is dissipated; if it is beyond a certain limit, the device is destroyed. Our goal is to determine the energy limits which are associated with our new Power integrated LDMOS transistor. (author) 28 refs.

Investigation of multipactor breakdown in communication satellite microwave co-axial systems

Science.gov (United States)

Nagesh, S. K.; Revannasiddiah, D.; Shastry, S. V. K.

2005-01-01

Multipactor breakdown or multipactor discharge is a form of high frequency discharge that may occur in microwave components operating at very low pressures. Some RF components of multi-channel communication satellites have co-axial geometry and handle high RF power under near-vacuum conditions. The breakdown occurs due to secondary electron resonance, wherein electrons move back and forth in synchronism with the RF voltage across the gap between the inner and outer conductors of the co-axial structure. If the yield of secondary electrons from the walls of the co-axial structure is greater than unity, then the electron density increases with time and eventually leads to the breakdown. In this paper, the current due to the oscillating electrons in the co-axial geometry has been treated as a radially oriented Hertzian dipole. The electric field, due to this dipole, at any point in the coaxial structure, may then be determined by employing the dyadic Green's function technique. This field has been compared with the field that would exist in the absence of multipactor.

Control model design to limit DC-link voltage during grid fault in a dfig variable speed wind turbine

Science.gov (United States)

Nwosu, Cajethan M.; Ogbuka, Cosmas U.; Oti, Stephen E.

2017-08-01

This paper presents a control model design capable of inhibiting the phenomenal rise in the DC-link voltage during grid- fault condition in a variable speed wind turbine. Against the use of power circuit protection strategies with inherent limitations in fault ride-through capability, a control circuit algorithm capable of limiting the DC-link voltage rise which in turn bears dynamics that has direct influence on the characteristics of the rotor voltage especially during grid faults is here proposed. The model results so obtained compare favorably with the simulation results as obtained in a MATLAB/SIMULINK environment. The generated model may therefore be used to predict near accurately the nature of DC-link voltage variations during fault given some factors which include speed and speed mode of operation, the value of damping resistor relative to half the product of inner loop current control bandwidth and the filter inductance.

Abnormal polarity effect in nanosecond-pulse breakdown of SF6 and nitrogen

International Nuclear Information System (INIS)

Shao, Tao; Tarasenko, Victor F.; Zhang, Cheng; Beloplotov, Dmitry S.; Yang, Wenjin; Lomaev, Mikhail I.; Zhou, Zhongsheng; Sorokin, Dmitry A.; Yan, Ping

2014-01-01

The breakdown of gas gaps in an inhomogeneous electric field at subnanosecond and nanosecond voltage pulse rise times are studied, and the famous polarity effect in point-to-plane gaps is investigated. It is shown that at a voltage pulse rise time of ∼0.5 ns, the inversion of polarity effect takes place not only in electronegative gases such as SF 6 , but also occurs in electropositive nitrogen. The inversion of polarity effect is related to a delay of electron emission from the plane cathode on arrival of the ionization wave front anode to the cathode. It is found that with a voltage pulse rise time of ∼0.5 ns, the inversion of polarity effect occurs at SF 6 and SF 6 –N 2 pressures of 0.25 MPa and lower, and with a voltage pulse rise time of 15 ns, at a SF 6 pressure lower than 0.12 MPa.

A novel concept of fault current limiter based on saturable core in high voltage DC transmission system

Science.gov (United States)

Yuan, Jiaxin; Zhou, Hang; Gan, Pengcheng; Zhong, Yongheng; Gao, Yanhui; Muramatsu, Kazuhiro; Du, Zhiye; Chen, Baichao

2018-05-01

To develop mechanical circuit breaker in high voltage direct current (HVDC) system, a fault current limiter is required. Traditional method to limit DC fault current is to use superconducting technology or power electronic devices, which is quite difficult to be brought to practical use under high voltage circumstances. In this paper, a novel concept of high voltage DC transmission system fault current limiter (DCSFCL) based on saturable core was proposed. In the DCSFCL, the permanent magnets (PM) are added on both up and down side of the core to generate reverse magnetic flux that offset the magnetic flux generated by DC current and make the DC winding present a variable inductance to the DC system. In normal state, DCSFCL works as a smoothing reactor and its inductance is within the scope of the design requirements. When a fault occurs, the inductance of DCSFCL rises immediately and limits the steepness of the fault current. Magnetic field simulations were carried out, showing that compared with conventional smoothing reactor, DCSFCL can decrease the high steepness of DC fault current by 17% in less than 10ms, which verifies the feasibility and effectiveness of this method.

Discussion - a high voltage DC generator

International Nuclear Information System (INIS)

Bhagwat, P.V.; Singh, Jagir; Hattangadi, V.A.

1993-01-01

One of the requirements for a high power ion source is a high voltage, high current DC generator. The high voltage, high current generator, DISCATRON, presently under development in our laboratory is a rotating disc type electrostatic generator similar in design to the one reported by A. Isoya et al. (1985). It is compact and rugged electrostatic DC generator based on the principle of induction charging by pellet chains used in the pelletron accelerator. It is, basically, a constant-current device with little stored energy, so that, in case of a breakdown, damage to the equipment connected to the output terminals is minimal. Since the present generator is only a proto-type, meant for a study of the practical difficulties that would be encountered in its manufacture, the output voltage and current specified has been kept quite modest viz., 300 kV at 500 μA, maximum. Some results of the preliminary tests carried out with this generator are described. (author). 4 figs

Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

International Nuclear Information System (INIS)

Bacchetta, N.; Bisello, D.; Candelori, A.; Rold, M. Da; Descovich, M.; Kaminski, A.; Messineo, A.; Rizzo, F.; Verzellesi, G.

2001-01-01

To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC

Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

CERN Document Server

Bacchetta, N; Candelori, A; Da Rold, M; Descovich, M; Kaminski, A; Messineo, A; Rizzo, F; Verzellesi, G

2001-01-01

To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC. (3 refs).

The Applicability of Fluid Model to Electrical Breakdown and Glow Discharge Modeling in Argon

International Nuclear Information System (INIS)

Stankov, M. N.; Marković, V. Lj.; Stamenković, S. N.; Jovanović, A. P.; Petković, M. D.

2015-01-01

The simple fluid model, an extended fluid model, and the fluid model with nonlocal ionization are applied for the calculations of static breakdown voltages, Paschen curves and current-voltage characteristics. The best agreement with the experimental data for the Paschen curve modeling is achieved by using the model with variable secondary electron yield. The modeling of current-voltage characteristics is performed for different inter-electrode distances and the results are compared with the experimental data. The fluid model with nonlocal ionization shows an excellent agreement for all inter-electrode distances, while the extended fluid model with variable electron transport coefficients agrees well with measurements at short inter-electrode distances when ionization by fast electrons can be neglected. (physics of gases, plasmas, and electric discharges)

The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

International Nuclear Information System (INIS)

Mao Wei; Hao Yue; Ma Xiao-Hua; Wang Chong; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Yang Lin-An; Yang Ling; Zhang Kai; Zhang Nai-Qian; Pei Yi; Yang Cui

2011-01-01

A GaN/Al 0.3 Ga 0.7 N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO 2 insulator (HfO 2 -FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO 2 -FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO 2 insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

A compact, all solid-state LC high voltage generator.

Science.gov (United States)

Fan, Xuliang; Liu, Jinliang

2013-06-01

LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

An improved low-voltage ride-through performance of DFIG based wind plant using stator dynamic composite fault current limiter.

Science.gov (United States)

Gayen, P K; Chatterjee, D; Goswami, S K

2016-05-01

In this paper, an enhanced low-voltage ride-through (LVRT) performance of a grid connected doubly fed induction generator (DFIG) has been presented with the usage of stator dynamic composite fault current limiter (SDCFCL). This protection circuit comprises of a suitable series resistor-inductor combination and parallel bidirectional semiconductor switch. The SDCFCL facilitates double benefits such as reduction of rotor induced open circuit voltage due to increased value of stator total inductance and concurrent increase of rotor impedance. Both effects will limit rotor circuit over current and over voltage situation more secured way in comparison to the conventional scheme like the dynamic rotor current limiter (RCL) during any type of fault situation. The proposed concept is validated through the simulation study of the grid integrated 2.0MW DFIG. Copyright © 2016 ISA. Published by Elsevier Ltd. All rights reserved.

The Electrical Breakdown of Thin Dielectric Elastomers

DEFF Research Database (Denmark)

Zakaria, Shamsul Bin; Morshuis, Peter H. F.; Yahia, Benslimane Mohamed

2014-01-01

Dielectric elastomers are being developed for use in actuators, sensors and generators to be used in various applications, such as artificial eye lids, pressure sensors and human motion energy generators. In order to obtain maximum efficiency, the devices are operated at high electrical fields....... This increases the likelihood for electrical breakdown significantly. Hence, for many applications the performance of the dielectric elastomers is limited by this risk of failure, which is triggered by several factors. Amongst others thermal effects may strongly influence the electrical breakdown strength....... In this study, we model the electrothermal breakdown in thin PDMS based dielectric elastomers in order to evaluate the thermal mechanisms behind the electrical failures. The objective is to predict the operation range of PDMS based dielectric elastomers with respect to the temperature at given electric field...

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

Energy Technology Data Exchange (ETDEWEB)

Ji, Yanfeng; Pan, Chengbin; Hui, Fei; Shi, Yuanyuan; Lanza, Mario, E-mail: mlanza@suda.edu.cn [Institute of Functional Nano and Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren-Ai Road, Suzhou 215123 (China); Zhang, Meiyun; Long, Shibing [Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Lian, Xiaojuan; Miao, Feng [National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Larcher, Luca [DISMI, Università di Modena e Reggio Emilia, 42122 Reggio Emilia (Italy); Wu, Ernest [IBM Research Division, Essex Junction, Vermont 05452 (United States)

2016-01-04

Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.

Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

Science.gov (United States)

Mao, Wei; Fan, Ju-Sheng; Du, Ming; Zhang, Jin-Feng; Zheng, Xue-Feng; Wang, Chong; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

2016-12-01

A novel AlGaN/GaN high electron mobility transistor (HEMT) with a source-connected T-shaped field-plate (ST-FP HEMT) is proposed for the first time in this paper. The source-connected T-shaped field-plate (ST-FP) is composed of a source-connected field-plate (S-FP) and a trench metal. The physical intrinsic mechanisms of the ST-FP to improve the breakdown voltage and the FP efficiency and to modulate the distributions of channel electric field and potential are studied in detail by means of two-dimensional numerical simulations with Silvaco-ATLAS. A comparison to the HEMT and the HEMT with an S-FP (S-FP HEMT) shows that the ST-FP HEMT could achieve a broader and more uniform channel electric field distribution with the help of a trench metal, which could increase the breakdown voltage and the FP efficiency remarkably. In addition, the relationship between the structure of the ST-FP, the channel electric field, the breakdown voltage as well as the FP efficiency in ST-FP HEMT is analyzed. These results could open up a new effective method to fabricate high voltage power devices for the power electronic applications. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574112, 61334002, 61306017, 61474091, and 61574110) and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 605119425012).

Simulation and investigation of SiPM’s leakage currents at low voltages

International Nuclear Information System (INIS)

Parygin, P P; Popova, E V; Grachev, V M

2017-01-01

Technology Computer-Aided Design (TCAD) allows us to use computers in order to develop semiconductor processing technologies and devices and optimize them. Within a framework of a study of silicon photomultipliers (SiPM) a simulation of these devices has been made. The simulation was performed for the irradiated SiPMs and current-voltage characteristics were obtained for the modeled devices. Investigation of current-voltage curve below breakdown with regard to the simulated structure was performed. Obtained curves are presented. (paper)

Note: Tesla based pulse generator for electrical breakdown study of liquid dielectrics

Science.gov (United States)

Veda Prakash, G.; Kumar, R.; Patel, J.; Saurabh, K.; Shyam, A.

2013-12-01

In the process of studying charge holding capability and delay time for breakdown in liquids under nanosecond (ns) time scales, a Tesla based pulse generator has been developed. Pulse generator is a combination of Tesla transformer, pulse forming line, a fast closing switch, and test chamber. Use of Tesla transformer over conventional Marx generators makes the pulse generator very compact, cost effective, and requires less maintenance. The system has been designed and developed to deliver maximum output voltage of 300 kV and rise time of the order of tens of nanoseconds. The paper deals with the system design parameters, breakdown test procedure, and various experimental results. To validate the pulse generator performance, experimental results have been compared with PSPICE simulation software and are in good agreement with simulation results.

Driving CZTS to the SQ Limit: Solving the Open Circuit Voltage Problem

Energy Technology Data Exchange (ETDEWEB)

Haight, Richard A. [IBM Research, Yorktown, NY (United States). Thomas J. Watson Research Center; McCandless, Brian E. [Univ. of Delaware, Newark, DE (United States); Kummel, Andrew C. [Univ. of California, San Diego, CA (United States); Gordon, Roy G. [Harvard Univ., Cambridge, MA (United States)

2016-12-15

A key objective of this 3 year research effort was to reduce the open circuit voltage (Voc) deficit, defined as the difference between the absorber band gap and the measured Voc to below 475mV from values at the beginning of this work of 630-730mV. To achieve this reduction, along with the attendant goals of higher Voc and efficiency, detailed studies into the fundamental understanding of existing limitations were undertaken.

Pre-breakdown processes in a dielectric fluid in inhomogeneous pulsed electric fields

Energy Technology Data Exchange (ETDEWEB)

Shneider, Mikhail N., E-mail: m.n.shneider@gmail.com [Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544 (United States); Pekker, Mikhail [MMSolution, 6808 Walker Street, Philadelphia, Pennsylvania 19135 (United States)

2015-06-14

We consider the development of pre-breakdown cavitation nanopores appearing in the dielectric fluid under the influence of the electrostrictive stresses in the inhomogeneous pulsed electric field. It is shown that three characteristic regions can be distinguished near the needle electrode. In the first region, where the electric field gradient is greatest, the cavitation nanopores, occurring during the voltage nanosecond pulse, may grow to the size at which an electron accelerated by the field inside the pores can acquire enough energy for excitation and ionization of the liquid on the opposite pore wall, i.e., the breakdown conditions are satisfied. In the second region, the negative pressure caused by the electrostriction is large enough for the cavitation initiation (which can be registered by optical methods), but, during the voltage pulse, the pores do not reach the size at which the potential difference across their borders becomes sufficient for ionization or excitation of water molecules. And, in the third, the development of cavitation is impossible, due to an insufficient level of the negative pressure: in this area, the spontaneously occurring micropores do not grow and collapse under the influence of surface tension forces. This paper discusses the expansion dynamics of the cavitation pores and their most probable shape.

Temporary over voltages in the high voltage networks

International Nuclear Information System (INIS)

Vukelja, Petar; Naumov, Radomir; Mrvic, Jovan; Minovski, Risto

2001-01-01

The paper treats the temporary over voltages that may arise in the high voltage networks as a result of: ground faults, loss of load, loss of one or two phases and switching operation. Based on the analysis, the measures for their limitation are proposed. (Original)

Subnanosecond breakdown in high-pressure gases

Science.gov (United States)

Naidis, George V.; Tarasenko, Victor F.; Babaeva, Natalia Yu; Lomaev, Mikhail I.

2018-01-01

Pulsed discharges in high-pressure gases are of considerable interest as sources of nonequilibrium plasma for various technological applications: pollution control, pumping of laser media, plasma-assisted combustion, etc. Recently, attention has been attracted to the use of subnanosecond voltage fronts, producing diffuse discharges with radii of several millimeters. Such plasma structures, similar to pulsed glow discharges, are of special interest for applications due to quasi-uniformity of plasma parameters in relatively large gas volumes. This review presents the results of experimental and computational study of subnanosecond diffuse discharge formation. A description of generators of short high-voltage pulses with subnanosecond fronts and of discharge setups is given. Diagnostic methods for the measurement of various discharge parameters with high temporal and spatial resolution are described. Obtained experimental data on plasma properties for a wide range of governing factors are discussed. A review of various theoretical approaches used for computational study of the dynamics and structure of fast ionization waves is given; the applicability of conventional fluid streamer models for simulation of subnanosecond ionization waves is discussed. Calculated spatial-temporal profiles of plasma parameters during streamer propagation are presented. The efficiency of subnanosecond discharges for the production of reactive species is evaluated. On the basis of the comparison of simulation results and experimental data the effects of various factors (voltage rise time, polarity, etc.) on discharge characteristics are revealed. The major physical phenomena governing the properties of subnanosecond breakdown are analyzed.

New phenomenology of gas breakdown in DC and RF fields

Science.gov (United States)

Petrović, Zoran Lj; Sivoš, Jelena; Savić, Marija; Škoro, Nikola; Radmilović Radenović, Marija; Malović, Gordana; Gocić, Saša; Marić, Dragana

2014-05-01

This paper follows a review lecture on the new developments in the field of gas breakdown and low current discharges, usually covered by a form of Townsend's theory and phenomenology. It gives an overview of a new approach to identifying which feedback agents provide breakdown, how to model gas discharge conditions and reconcile the results with binary experiments and how to employ that knowledge in modelling gas discharges. The next step is an illustration on how to record volt-ampere characteristics and use them on one hand to obtain the breakdown voltage and, on the other, to identify the regime of operation and model the secondary electron yields. The second aspect of this section concerns understanding the different regimes, their anatomy, how those are generated and how free running oscillations occur. While temporal development is the most useful and interesting part of the new developments, the difficulty of presenting the data in a written form precludes an easy publication and discussion. Thus, we shall only mention some of the results that stem from these measurements. Most micro discharges operate in DC albeit with complex geometries. Thus, parallel plate micro discharge measurements were needed to establish that Townsend's theory, with all its recent extensions, is still valid until some very small gaps. We have shown, for example, how a long-path breakdown puts in jeopardy many experimental observations and why a flat left-hand side of the Paschen curve often does not represent good physics. We will also summarize a kinetic representation of the RF breakdown revealing a somewhat more complex picture than the standard model. Finally, we will address briefly the breakdown in radially inhomogeneous conditions and how that affects the measured properties of the discharge. This review has the goal of summarizing (rather than developing details of) the current status of the low-current DC discharges formation and operation as a discipline which, in spite of

Algorithm оf Computer Model Realization оf High-Frequency Processes in Switchgears Containing Non-Linear Over-Voltage Limiters

Directory of Open Access Journals (Sweden)

Ye. V. Dmitriev

2007-01-01

Full Text Available Analysis of the Over-Voltage Limiter (OVL influence on electromagnetic high-frequency over-voltages at commutations with isolators of unloaded sections of wires and possibility of application of a frequency-dependent resistor in case of necessity to facilitate OVL operation conditions is provided in the paper.It is shown that it is necessary to take into account characteristics of OVL by IEEE circuit and its modifications at computer modeling of high-frequency over-voltages.

Domain IV voltage-sensor movement is both sufficient and rate limiting for fast inactivation in sodium channels.

Science.gov (United States)

Capes, Deborah L; Goldschen-Ohm, Marcel P; Arcisio-Miranda, Manoel; Bezanilla, Francisco; Chanda, Baron

2013-08-01

Voltage-gated sodium channels are critical for the generation and propagation of electrical signals in most excitable cells. Activation of Na(+) channels initiates an action potential, and fast inactivation facilitates repolarization of the membrane by the outward K(+) current. Fast inactivation is also the main determinant of the refractory period between successive electrical impulses. Although the voltage sensor of domain IV (DIV) has been implicated in fast inactivation, it remains unclear whether the activation of DIV alone is sufficient for fast inactivation to occur. Here, we functionally neutralize each specific voltage sensor by mutating several critical arginines in the S4 segment to glutamines. We assess the individual role of each voltage-sensing domain in the voltage dependence and kinetics of fast inactivation upon its specific inhibition. We show that movement of the DIV voltage sensor is the rate-limiting step for both development and recovery from fast inactivation. Our data suggest that activation of the DIV voltage sensor alone is sufficient for fast inactivation to occur, and that activation of DIV before channel opening is the molecular mechanism for closed-state inactivation. We propose a kinetic model of sodium channel gating that can account for our major findings over a wide voltage range by postulating that DIV movement is both necessary and sufficient for fast inactivation.

Development of a prototype solid state fault current limiting and interrupting device for low voltage distribution networks.

OpenAIRE

Ahmed, M.; Putrus, G. A.; Ran, L.; Penlington, R.

2006-01-01

This paper describes the development of a solid-state Fault Current Limiting and Interrupting Device (FCLID) suitable for low voltage distribution networks. The main components of the FCLID are a bidirectional semiconductor switch that can disrupt the short-circuit current, and a voltage clamping element that helps in controlling the current and absorbing the inductive energy stored in the network during current interruption. Using a hysteresis type control algorithm, the short-circuit curren...

Electrical Tree Initiation and Growth in Silicone Rubber under Combined DC-Pulse Voltage

Directory of Open Access Journals (Sweden)

Tao Han

2018-03-01

Full Text Available Electrical tree is a serious threat to silicone rubber (SIR insulation and can even cause breakdown. Electrical trees under alternating current (AC and direct current (DC voltage have been widely researched. While there are pulses in high-voltage direct current (HVDC cables under operating conditions caused by lightning and operating overvoltage in the power system, little research has been reported about trees under combined DC-pulse voltage. Their inception and growth mechanism is still not clear. In this paper, electrical trees are studied under several types of combined DC-pulse voltage. The initiation and growth process was recorded by a digital microscope system. The experimental results indicate that the inception pulse voltage is different under each voltage type and is influenced by the combined DC. The initial tree has two structures, determined by the pulse polarity. With increased DC prestressing time, tree inception pulse voltage with the same polarity is clearly decreased. Moreover, a special initial bubble tree was observed after the prestressing DC.

Experimental and analytical study of the DC breakdown characteristics of polypropylene laminated paper with a butt gap condition considering the insulation design of superconducting cable

Science.gov (United States)

Seo, In-jin; Choi, Won; Seong, Jae-gyu; Lee, Bang-wook; Koo, Ja-yoon

2014-08-01

It has been reported that the insulation design under DC stress is considered as one of the critical factors in determining the performance of high-voltage direct current (HVDC) superconducting cable. Therefore, it is fundamentally necessary to investigate the DC breakdown characteristics of the composite insulation system consisting of liquid nitrogen (LN2)/polypropylene-laminated-paper (PPLP). In particular, the insulation characteristics under DC polarity reversal condition should be verified to understand the polarity effect of the DC voltage considering the unexpected incidents taking place at line-commutated-converters (LCC) under service at a DC power grid. In this study, to examine the variation of DC electric field strength, the step voltage and polarity reversal breakdown tests are performed under DC stress. Also, we investigate the electric field distributions in a butt gap of the LN2/PPLP condition considering the DC polarity reversal by using simulation software.

Electrical Breakdown and Mechanical Ageing in Dielectric Elastomers

DEFF Research Database (Denmark)

Zakaria, Shamsul Bin

Dielectric elastomers (DE) are used in various applications, such as artificial eye lids, pressure sensors and human motion energy generators. For many applications, one of the major factors that limits the DE performance is premature electrical breakdown. There are many approaches that have been......, the lifetime of elastomer materials needs further investigation. Therefore, in the second strategy, several DE parameters such as Young’s moduli, breakdown strengths and dielectric permittivities of PDMS elastomers filled with hard filler particles were investigated after being subjected to pre...

Gas breakdown at cyclotron resonance with a submillimeter laser

International Nuclear Information System (INIS)

Hacker, M.P.; Temkin, R.J.; Lax, B.

1976-01-01

A pulsed 496-μm CH 3 F laser is used to produce gas breakdown in He at pressures between 1 and 300 Torr in an intense longitudinal magnetic field. Breakdown is detected by the observation of visible light when the electron cyclotron frequency (eB/m) equals the laser frequency, which occurs at B=216 kG for lambda=496 μm. At the lowest helium pressures and near cyclotron resonance, the focused laser intensity of 40 kW/cm 2 gives rise to very large electron heating rates, well beyond the limit of validity of conventional equilibrium breakdown theory. The observed result is an intensity-dependent resonant linewidth, much larger than predicted by equilibrium theories

Magnetosphere-ionosphere coupling currents in Jupiter's middle magnetosphere: effect of magnetosphere-ionosphere decoupling by field-aligned auroral voltages

Directory of Open Access Journals (Sweden)

J. D. Nichols

2005-03-01

Full Text Available We consider the effect of field-aligned voltages on the magnetosphere-ionosphere coupling current system associated with the breakdown of rigid corotation of equatorial plasma in Jupiter's middle magnetosphere. Previous analyses have assumed perfect mapping of the electric field and flow along equipotential field lines between the equatorial plane and the ionosphere, whereas it has been shown that substantial field-aligned voltages must exist to drive the field-aligned currents associated with the main auroral oval. The effect of these field-aligned voltages is to decouple the flow of the equatorial and ionospheric plasma, such that their angular velocities are in general different from each other. In this paper we self-consistently include the field-aligned voltages in computing the plasma flows and currents in the system. A third order differential equation is derived for the ionospheric plasma angular velocity, and a power series solution obtained which reduces to previous solutions in the limit that the field-aligned voltage is small. Results are obtained to second order in the power series, and are compared to the original zeroth order results with no parallel voltage. We find that for system parameters appropriate to Jupiter the effect of the field-aligned voltages on the solutions is small, thus validating the results of previously-published analyses.

Specific Localization of High-Voltage Discharge in Vicinity of Two Gases

Science.gov (United States)

Leonov, Sergey; Shurupov, Michail; Shneider, Michail; Napartovich, Anatoly; Kochetov, Igor

2011-10-01

A subject of paper is the appearance and dynamics of sub-microsecond long filamentary high-voltage discharge generated in atmosphere, and in non-homogeneous gaseous media. Typical discharge parameters are: maximal current 1-3kA, breakdown voltage >100 kV, duration 30-100 ns, gap distance 50-100mm. The effect of discharge specific localization within mixing layer of two gases is particularly discussed. The second discussed idea is the filamentary discharge movement within a region with concentration gradient of different components. For the short-pulse discharge the physical mechanism appears as the following. The first stage of the spark breakdown is the multiple streamers propagation from the high-voltage electrode toward the grounded one. In case of high-power electrical source those streamers occupy a huge volume of the gas, covering all possible paths for the further development. The next phase consists of the real selection of the discharge path among the multiple channels with non-zero conductivity. Experiments and calculations are presented for Air-CO2 and Air-C2H4 pairs. The effects found are supposed to be applied for lightning prediction/protection, and for high-speed mixing acceleration. The work was funded through EOARD-ISTC project #3793p. Some part of this work was supported by RFBR grant #10-08-00952.

An Ensemble Learning for Predicting Breakdown Field Strength of Polyimide Nanocomposite Films

Directory of Open Access Journals (Sweden)

Hai Guo

2015-01-01

Full Text Available Using the method of Stochastic Gradient Boosting, ten SMO-SVR are constructed into a strong prediction model (SGBS model that is efficient in predicting the breakdown field strength. Adopting the method of in situ polymerization, thirty-two samples of nanocomposite films with different percentage compositions, components, and thicknesses are prepared. Then, the breakdown field strength is tested by using voltage test equipment. From the test results, the correlation coefficient (CC, the mean absolute error (MAE, the root mean squared error (RMSE, the relative absolute error (RAE, and the root relative squared error (RRSE are 0.9664, 14.2598, 19.684, 22.26%, and 25.01% with SGBS model. The result indicates that the predicted values fit well with the measured ones. Comparisons between models such as linear regression, BP, GRNN, SVR, and SMO-SVR have also been made under the same conditions. They show that CC of the SGBS model is higher than those of other models. Nevertheless, the MAE, RMSE, RAE, and RRSE of the SGBS model are lower than those of other models. This demonstrates that the SGBS model is better than other models in predicting the breakdown field strength of polyimide nanocomposite films.

Stress relief of ceramic components in high voltage assemblies. Final report

International Nuclear Information System (INIS)

Heinen, R.J.

1979-02-01

Two types of ceramic packages were evaluated to determine the effectiveness of encapsulating the ceramic components in beta eucryptite filled epoxy. The requirements (no high voltage breakdown, no ceramic cracking, and no encapsulant cracking) were met by the spark gap assembly, but the sprytron assembly had cracking in the encapsulant after thermal cycling. The encapsulation of the ceramic component in beta eucryptite filled epoxy with a stress decoupling material selectively applied in the stress concentrated areas were used to prevent cracking in the sprytron encapsulant. This method is proposed as the standard encapsulation process for high voltage ceramic components

The electrical breakdown strength of pre-stretched elastomers, with and without sample volume conservation

DEFF Research Database (Denmark)

Zakaria, Shamsul Bin; Morshuis, Peter H. F.; Yahia, Benslimane Mohamed

2015-01-01

In practice, the electrical breakdown strength of dielectric electroactive polymers (DEAPs)determines the upper limit for transduction. During DEAP actuation, the thickness of the elastomer decreases, and thus the electrical field increases and the breakdown process is determined by a coupled...... electro-mechanical failure mechanism. A thorough understanding of the mechanisms behind the electro-mechanical breakdown process is required for developing reliable transducers. In this study, two experimental configurations were used to determine the stretch dependence of the electrical breakdown...

RF Breakdown Studies Using a 1.3 GHZ Test Cell

International Nuclear Information System (INIS)

Sah, R.; Johnson, R.P.; Neubauer, M.; Conde, M.; Gai, W.; Moretti, A.; Popovic, M.; Yonehara, K.; Byrd, J.; Li, D.; BastaniNejad, M.

2009-01-01

Many present and future particle accelerators are limited by the maximum electric gradient and peak surface fields that can be realized in RF cavities. Despite considerable effort, a comprehensive theory of RF breakdown has not been achieved and mitigation techniques to improve practical maximum accelerating gradients have had only limited success. Recent studies have shown that high gradients can be achieved quickly in 805 MHz RF cavities pressurized with dense hydrogen gas without the need for long conditioning times, because the dense gas can dramatically reduce dark currents and multipacting. In this project we use this high pressure technique to suppress effects of residual vacuum and geometry found in evacuated cavities to isolate and study the role of the metallic surfaces in RF cavity breakdown as a function of magnetic field, frequency, and surface preparation. A 1.3-GHz RF test cell with replaceable electrodes (e.g. Mo, Cu, Be, W, and Nb) and pressure barrier capable of operating both at high pressure and in vacuum has been designed and built, and preliminary testing has been completed. A series of detailed experiments is planned at the Argonne Wakefield Accelerator. At the same time, computer simulations of the RF Breakdown process will be carried out to help develop a consistent physics model of RF Breakdown. In order to study the effect of the radiofrequency on RF Breakdown, a second test cell will be designed, fabricated, and tested at a lower frequency, most likely 402.5 MHz.

Study of edge effects in the breakdown process of p sup + on n-bulk silicon diodes

CERN Document Server

Militaru, O; Bozzi, C; Rold, M D; Dell'Orso, R; Dutta, S; Messineo, A; Mihul, A; Tonelli, G; Verdini, P G; Wheadon, R; Xie, Z

2000-01-01

The paper describes the role of the n sup + edge implants in the breakdown process of p sup + on n-bulk silicon diodes. Laboratory measurements and simulation studies are presented on a series of test structures aimed at an optimization of the design in the edge region. The dependence of the breakdown voltage on the geometrical parameters of the devices is discussed in detail. Design rules are extracted for the use of n sup + -layers along the scribe line to avoid surface conduction of current generated by the exposed edges. The effect of neutron irradiation has been studied up to a fluence of 1.8x10 sup 1 sup 5 cm sup - sup 2.

High voltage research (breakdown strengths of gaseous and liquid insulators). Semiannual report, April 1--September 30, 1977

Energy Technology Data Exchange (ETDEWEB)

Christophorou, L. G.; James, D. R.; Pai, R. Y.; Mathis, R. A.; Pace, M. O.; Bouldin, D. W.; Christodoulides, A. A.; Chan, C. C.

1977-11-01

Direct current breakdown strength measurements on a large number of multicomponent gas mixtures at low (approximately less than 1 atm) and high (approximately less than 5 atm) pressures led to the discovery of many gas mixtures of electron-attaching gases and strongly electron-attaching gases with N/sub 2/ and C/sub 3/F/sub 8/ which are superior to SF/sub 6/. Of special significance are mixtures containing C/sub 4/F/sub 6/ (perfluoro-2-butyne). The breakdown strength of one such mixture (20 percent C/sub 4/F/sub 6/ to 80 percent SF/sub 6/) is approximately 30 percent higher than pure SF/sub 6/ under identical conditions, both at low (approximately 0.7 atm) and high (4.6 atm) pressures. Perfluorocyclohexene (C/sub 6/F/sub 10/) and C/sub 5/F/sub 8/ (perfluorocyclopentene) were found at low pressure (approximately 0.2 atm) to be, respectively, approximately 2.1 and 2.2 times better than SF/sub 6/ under comparable conditions; they both have a potential as additives in gas mixtures. The effect of the inelastic electron scattering properties of a gas via negative ion resonances in the low-energy range (1 to approximately 4 eV) on the breakdown strength has been demonstrated for H/sub 2/, N/sub 2/, and CO and binary mixtures of these with SF/sub 6/ and C/sub 4/F/sub 6/ (perfluoro-2-butyne). The construction of a new high pressure (to approximately 11 atm), variable temperature (-50/sup 0/C to + 150/sup 0/C) apparatus has been completed and a practical test facility utilizing cylindrical electrode geometries has been put into operation; the first results on the latter apparatus were on SF/sub 6/-N/sub 2/ and c-C/sub 4/F/sub 8/--N/sub 2/ mixtures. Studies of environmental effects of dielectric gases via their electron-impact-induced decompositions and analysis of their breakdown products have begun using mass spectrometry and gas chromatography; C/sub 4/F/sub 6/ (perfluoro-2-butyne) seems to be resistant to electron-impact-induced decomposition indicating long

The development of high-voltage repetitive low-jitter corona stabilized triggered switch

Science.gov (United States)

Geng, Jiuyuan; Yang, Jianhua; Cheng, Xinbing; Yang, Xiao; Chen, Rong

2018-04-01

The high-power switch plays an important part in a pulse power system. With the trend of pulse power technology toward modularization, miniaturization, and accuracy control, higher requirements on electrical trigger and jitter of the switch have been put forward. A high-power low-jitter corona-stabilized triggered switch (CSTS) is designed in this paper. This kind of CSTS is based on corona stabilized mechanism, and it can be used as a main switch of an intense electron-beam accelerator (IEBA). Its main feature was the use of an annular trigger electrode instead of a traditional needle-like trigger electrode, taking main and side trigger rings to fix the discharging channels and using SF6/N2 gas mixture as its operation gas. In this paper, the strength of the local field enhancement was changed by a trigger electrode protrusion length Dp. The differences of self-breakdown voltage and its stability, delay time jitter, trigger requirements, and operation range of the switch were compared. Then the effect of different SF6/N2 mixture ratio on switch performance was explored. The experimental results show that when the SF6 is 15% with the pressure of 0.2 MPa, the hold-off voltage of the switch is 551 kV, the operating range is 46.4%-93.5% of the self-breakdown voltage, the jitter is 0.57 ns, and the minimum trigger voltage requirement is 55.8% of the peak. At present, the CSTS has been successfully applied to an IEBA for long time operation.

Amplitude-temporal characteristics of a supershort avalanche electron beam generated during subnanosecond breakdown in air and nitrogen

Science.gov (United States)

Tarasenko, V. F.; Baksht, E. Kh.; Beloplotov, D. V.; Burachenko, A. G.; Lomaev, M. I.

2016-04-01

The amplitude-temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude-temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.

Amplitude−temporal characteristics of a supershort avalanche electron beam generated during subnanosecond breakdown in air and nitrogen

Energy Technology Data Exchange (ETDEWEB)

Tarasenko, V. F., E-mail: vft@loi.hcei.tsc.ru; Baksht, E. Kh.; Beloplotov, D. V.; Burachenko, A. G.; Lomaev, M. I. [Siberian Branch, Russian Academy of Sciences, Institute of High Current Electronics (Russian Federation)

2016-04-15

The amplitude−temporal characteristics of a supershort avalanche electron beam (SAEB) with an amplitude of up to 100 A, as well as of the breakdown voltage and discharge current, are studied experimentally with a picosecond time resolution. The waveforms of discharge and SAEB currents are synchronized with those of the voltage pulses. It is shown that the amplitude−temporal characteristics of the SAEB depend on the gap length and the designs of the gas diode and cathode. The mechanism for the generation of runaway electron beams in atmospheric-pressure gases is analyzed on the basis of the obtained experimental data.

Electrical breakdown in vacuum

International Nuclear Information System (INIS)

Beukema, G.P.

1980-01-01

The main part of this thesis is dedicated to the field enhancement factor; in particular to the study of the origin, alteration and influence on the breakdown properties of different materials. This work required the examination of large surface areas on the same microscopic scale on which the relevant phenomena occur. (Pre)-breakdown measurements are described in which the anode condition does not play a role in the initiation of a breakdown, while the cathode can be considered as a broad-area electrode. The influence of adsorbed gases on pre-breakdown currents is investigated. It is shown that ions, released by field emission electrons from adsorbed layers on the anode change the emitting properties of a well-conditioned cathode if the current density at the anode is small. A new experimental arrangement is outlined to better distinguish between the different parameters which are important for the initiation of electrical breakdown. Comparative measurements between stainless steel and titanium electrodes are described to study the influence of either the cathode or the anode upon the initiation of a breakdown. (Auth.)

Low-profile high-voltage compact gas switch

International Nuclear Information System (INIS)

Goerz, D.A.; Wilson, M.J.; Speer, R.D.

1997-01-01

This paper discusses the development and testing of a low-profile, high-voltage, spark-gap switch designed to be closely coupled with other components into an integrated high-energy pulsed-power source. The switch is designed to operate at 100 kV using SF6 gas pressurized to less than 0.7 MPa. The volume of the switch cavity region is less than 1.5 cm3, and the field stress along the gas-dielectric interface is as high as 130 kV/cm. The dielectric switch body has a low profile that is only I -cm tall at its greatest extent and nominally 2-mm thick over most of its area. This design achieves a very low inductance of less than 5 nH, but results in field stresses exceeding 500 kV/cm in the dielectric material. Field modeling was done to determine the appropriate shape for the highly stressed insulator and electrodes, and special manufacturing techniques were employed to mitigate the usual mechanisms that induce breakdown and failure in solid dielectrics. Static breakdown tests verified that the switch operates satisfactorily at 100 kV levels. The unit has been characterized with different shaped electrodes having nominal gap spacings of 2.0, 2.5, and 3.0 mm. The relationship between self-break voltage and operating pressure agrees well with published data on gas properties, accounting for the field enhancements of the electrode shapes being used. Capacitor discharge tests in a low inductance test fixture exhibited peak currents up to 25 kA with characteristic frequencies of the ringdown circuit ranging from 10 to 20 MHz. The ringdown waveforms and scaling of measured parameters agree well with circuit modeling of the switch and test fixture. Repetitive operation has been demonstrated at moderate rep-rates up to 15 Hz, limited by the power supply being used. Preliminary tests to evaluate lifetime of the compact switch assembly have been encouraging. In one case, after more than 7,000 high-current ringdown tests with approximately 30 C of total charge transferred, the

Frequency and Temperature Dependence of Electrical Breakdown at 21, 30, and 39GHz

Science.gov (United States)

Braun, H. H.; Döbert, S.; Wilson, I.; Wuensch, W.

2003-06-01

A TeV-range e+e- linear collider has emerged as one of the most promising candidates to extend the high energy frontier of experimental elementary particle physics. A high accelerating gradient for such a collider is desirable to limit its overall length. Accelerating gradient is mainly limited by electrical breakdown, and it has been generally assumed that this limit increases with increasing frequency for normal-conducting accelerating structures. Since the choice of frequency has a profound influence on the design of a linear collider, the frequency dependence of breakdown has been measured using six exactly scaled single-cell cavities at 21, 30, and 39GHz. The influence of temperature on breakdown behavior was also investigated. The maximum obtainable surface fields were found to be in the range of 300 to 400 MV/m for copper, with no significant dependence on either frequency or temperature.

Frequency and Temperature Dependence of Electrical Breakdown at 21, 30 and 39 GHz

CERN Document Server

Braun, Hans Heinrich; Wilson, Ian H; Wuensch, Walter

2003-01-01

A TeV-range e+e- linear collider has emerged as one of the most promising candidates to extend the high energy frontier of experimental elementary particle physics. A high accelerating gradient for such a collider is desirable to limit its overall length. Accelerating gradient is mainly limited by electrical breakdown, and it has been generally assumed that this limit increases with increasing frequency for normal-conducting accelerating structures. Since the choice of frequency has a profound influence on the design of a linear collider, the frequency dependence of breakdown has been measured using six exactly scaled single-cell cavities at 21, 30, and 39 GHz. The influence of temperature on breakdown behavior was also investigated. The maximum obtainable surface fields were found to be in the range of 300 to 400 MV/m for copper, with no significant dependence on either frequency or temperature.

Limited Relationship of Voltage Criteria for Electrocardiogram Left Ventricular Hypertrophy to Cardiovascular Mortality.

Science.gov (United States)

Ha, Le Dung; Elbadawi, Ayman; Froelicher, Victor F

2018-01-01

Numerous methods have been proposed for diagnosing left ventricular hypertrophy using the electrocardiogram. They have limited sensitivity for recognizing pathological hypertrophy, at least in part due to their inability to distinguish pathological from physiological hypertrophy. Our objective is to compare the major electrocardiogram-left ventricular hypertrophy criteria using cardiovascular mortality as a surrogate for pathological hypertrophy. This study was a retrospective analysis of 16,253 veterans electrocardiogram-left ventricular hypertrophy, and there were 744 cardiovascular deaths (annual cardiovascular mortality 0.25%). Receiver operating characteristic analysis demonstrated that the greatest area under the curve (AUC) for classification of cardiovascular death was obtained using the Romhilt-Estes score (0.63; 95% confidence interval, 0.61-0.65). Most of the voltage-only criteria had nondiagnostic area under the curves, with the Cornell being the best at 0.59 (95% confidence interval, 0.57-0.62). When the components of the Romhilt-Estes score were examined using step-wise Wald analysis, the voltage criteria dropped from the model. The Romhilt-Estes score ≥ 4, the Cornell, and the Peguero had the highest association with cardiovascular mortality (adjusted hazard ratios 2.2, 2.0, and 2.1, consecutively). None of the electrocardiogram leads with voltage criteria exhibited sufficient classification power for clinical use. Copyright © 2018 Elsevier Inc. All rights reserved.

Evaluation of the Voltage Support Strategies for the Low Voltage Grid Connected PV

DEFF Research Database (Denmark)

Demirok, Erhan; Sera, Dezso; Teodorescu, Remus

2010-01-01

Admissible range of grid voltage is one of the strictest constraints for the penetration of distributed photovoltaic (PV) generators especially connection to low voltage (LV) public networks. Voltage limits are usually fulfilled either by network reinforcements or limiting of power injections from...... PVs. In order to increase PV penetration level further, new voltage support control functions for individual inverters are required. This paper investigates distributed reactive power regulation and active power curtailment strategies regarding the development of PV connection capacity by evaluation...... of reactive power efforts and requirement of minimum active power curtailment. Furthermore, a small scale experimental setup is built to reflect real grid interaction in the laboratory by achieving critical types of grid (weak and sufficiently stiff)....

Breakdowns in collaborative information seeking

DEFF Research Database (Denmark)

Hertzum, Morten

2010-01-01

Collaborative information seeking is integral to many professional activities. In hospital work, the medication process encompasses continual seeking for information and collaborative grounding of information. This study investigates breakdowns in collaborative information seeking through analyses...... of the use of the electronic medication record adopted in a Danish healthcare region and of the reports of five years of medication incidents at Danish hospitals. The results show that breakdowns in collaborative information seeking is a major source of medication incidents, that most of these breakdowns...... are breakdowns in collaborative grounding rather than information seeking, that the medication incidents mainly concern breakdowns in the use of records as opposed to oral communication, that the breakdowns span multiple degrees of separation between clinicians, and that the electronic medication record has...

Effect of resin composition to the electrical and mechanical properties of high voltage insulator material

International Nuclear Information System (INIS)

Totok Dermawan; Elin Nuraini; Suyamto

2012-01-01

A solid insulator manufacture of resins for high voltage with a variation of resin and hardener composition has been made. The purpose of research to know electrical and mechanical properties of high voltage insulator material of resin. To determine its electric properties, the material is tested its breakdown voltage and the flashover voltage that occurred on the surface. While to determine the mechanical properties were tested by measuring its strength with a tensile test. From testing with variety of mixed composition it is known that for composition between hardener and resin of 1 : 800 has most advantageous properties because it has good strength with a tensile strength of 19.86 MPa and enough high dielectric strength of 43.2 kV / mm). (author)

Experimental validation of prototype high voltage bushing

Science.gov (United States)

Shah, Sejal; Tyagi, H.; Sharma, D.; Parmar, D.; M. N., Vishnudev; Joshi, K.; Patel, K.; Yadav, A.; Patel, R.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A.

2017-08-01

Prototype High voltage bushing (PHVB) is a scaled down configuration of DNB High Voltage Bushing (HVB) of ITER. It is designed for operation at 50 kV DC to ensure operational performance and thereby confirming the design configuration of DNB HVB. Two concentric insulators viz. Ceramic and Fiber reinforced polymer (FRP) rings are used as double layered vacuum boundary for 50 kV isolation between grounded and high voltage flanges. Stress shields are designed for smooth electric field distribution. During ceramic to Kovar brazing, spilling cannot be controlled which may lead to high localized electrostatic stress. To understand spilling phenomenon and precise stress calculation, quantitative analysis was performed using Scanning Electron Microscopy (SEM) of brazed sample and similar configuration modeled while performing the Finite Element (FE) analysis. FE analysis of PHVB is performed to find out electrical stresses on different areas of PHVB and are maintained similar to DNB HV Bushing. With this configuration, the experiment is performed considering ITER like vacuum and electrical parameters. Initial HV test is performed by temporary vacuum sealing arrangements using gaskets/O-rings at both ends in order to achieve desired vacuum and keep the system maintainable. During validation test, 50 kV voltage withstand is performed for one hour. Voltage withstand test for 60 kV DC (20% higher rated voltage) have also been performed without any breakdown. Successful operation of PHVB confirms the design of DNB HV Bushing. In this paper, configuration of PHVB with experimental validation data is presented.

Vivitron 1995, transient voltage simulation, high voltage insulator tests, electric field calculation

International Nuclear Information System (INIS)

Frick, G.; Osswald, F.; Heusch, B.

1996-01-01

Preliminary investigations showed clearly that, because of the discrete electrode structure of the Vivitron, important overvoltage leading to insulator damage can appear in case of a spark. The first high voltage tests showed damage connected with such events. This fact leads to a severe voltage limitation. This work describes, at first, studies made to understand the effects of transients and the associated over-voltage appearing in the Vivitron. Then we present the high voltage tests made with full size Vivitron components using the CN 6 MV machine as a pilot machine. Extensive field calculations were made. These involve simulations of static stresses and transient overvoltages, on insulating boards and electrodes. This work gave us the solutions for arrangements and modifications in the machine. After application, the Vivitron runs now without any sparks and damage at 20 MV. In the same manner, we tested column insulators of a new design and so we will find out how to get to higher voltages. Electric field calculation around the tie bars connecting the discrete electrodes together showed field enhancements when the voltages applied on the discrete electrodes are not equally distributed. This fact is one of the sources of discharges and voltage limitations. A scenario of a spark event is described and indications are given how to proceed towards higher voltages, in the 30 MV range. (orig.)

Nonlinear current-voltage characteristics of WO3-x nano-/micro-rods

Science.gov (United States)

Shen, Zhenguang; Peng, Zhijian; Zhao, Zengying; Fu, Xiuli

2018-04-01

A series of crystalline tungsten oxide nano-/micro-rods with different compositions of WO3, WO2.90, W19O55 (WO2.89) and W18O49 (WO2.72) but identical morphology feature were first prepared. Then, various nanoscaled electrical devices were fabricated from them by micro-fabrication through a focused ion beam technique. Interestingly, the devices from the oxygen-deficient WO3-x display significantly nonlinear current-voltage characteristics. The calculated nonlinear coefficients of the WO2.90, WO2.83, and WO2.72 varistors are 2.52, 3.32 and 4.91, respectively. The breakdown voltage of the WO2.90, WO2.83, and WO2.72 varistors are 1.93, 1.28 and 0.93 V, respectively. Such WO3-x nano-varistors might be promising for low-voltage electrical/electronic devices.

CURRENT-VOLTAGE CURVES FOR TREATING EFFLUENT CONTAINING HEDP: DETERMINATION OF THE LIMITING CURRENT

Directory of Open Access Journals (Sweden)

T. Scarazzato

2015-12-01

Full Text Available Abstract Membrane separation techniques have been explored for treating industrial effluents to allow water reuse and component recovery. In an electrodialysis system, concentration polarization causes undesirable alterations in the ionic transportation mechanism. The graphic construction of the current voltage curve is proposed for establishing the value of the limiting current density applied to the cell. The aim of this work was to determine the limiting current density in an electrodialysis bench stack, the function of which was the treatment of an electroplating effluent containing HEDP. For this, a system with five compartments was used with a working solution simulating the rinse waters of HEDP-based baths. The results demonstrated correlation between the regions defined by theory and the experimental data.

Stray voltage mitigation

Energy Technology Data Exchange (ETDEWEB)

Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

2008-04-09

This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

A high-voltage test for the ATLAS RPC qualification

CERN Document Server

Aielli, G; Cardarelli, R; Di Ciaccio, A; Di Simone, A; Liberti, B; Santonico, R

2004-01-01

The RPC production sequence for the ATLAS experiment includes a specific test of current absorption at the operating point, which concerns the RPC "gas volumes", namely the bare detectors not yet assembled with the read-out panels and the mechanical support structures. The test, which is carried out at the production site, consists of two phases. The gas volumes are initially conditioned with pure argon, keeping the voltage constant just above the breakdown value of about 2 kV. The final test, performed after the volumes have undergone inner surface varnishing with linseed oil, is based on the measurement of the current-voltage characteristics with the binary operating gas, C//2H//2F//4/i-C//4H//1//0 = 95/5. The results presented here concern 45% of the total foreseen production.

A high-voltage test for the ATLAS RPC qualification

International Nuclear Information System (INIS)

Aielli, G.; Camarri, P.; Cardarelli, R.; Di Ciaccio, A.; Di Simone, A.; Liberti, B.; Santonico, R.

2004-01-01

The RPC production sequence for the ATLAS experiment includes a specific test of current absorption at the operating point, which concerns the RPC 'gas volumes', namely the bare detectors not yet assembled with the read-out panels and the mechanical support structures. The test, which is carried out at the production site, consists of two phases. The gas volumes are initially conditioned with pure argon, keeping the voltage constant just above the breakdown value of about 2 kV. The final test, performed after the volumes have undergone inner surface varnishing with linseed oil, is based on the measurement of the current-voltage characteristics with the binary operating gas, C2H2F4/i-C4H10=95/5. The results presented here concern 45% of the total foreseen production

Universal trench design method for a high-voltage SOI trench LDMOS

Institute of Scientific and Technical Information of China (English)

Hu Xiarong; Zhang Bo; Luo Xiaorong; Li Zhaoji

2012-01-01

The design method for a high-voltage SOl trench LDMOS for various trench permittivities,widths and depths is introduced.A universal method for efficient design is presented for the first time,taking the trade-off between breakdown voltage (BV) and specific on-resistance (Rs,on) into account.The high-k (relative permittivity)dielectric is suitable to fill a shallow and wide trench while the low-k dielectric is suitable to fill a deep and narrow trench.An SOI LDMOS with a vacuum trench in the drift region is also discussed.Simulation results show that the high FOM BV2/Rs,on can be achieved with a trench filled with the low-k dielectric due to its shortened cell-pitch.

Power-supply system for high-voltage electron guns with grid control

International Nuclear Information System (INIS)

Grigorev, Y.V.

1985-01-01

A power-supply system for electron guns with grid control is described which consists of a source of accelerating voltage between 20 and 180 kV with a current of 100 mA and a control circuit for an electron gun that contains a pulse generator having an output voltage of up to 5 kV for pulse durations of 2, 10, 50 and 90 microseconds. The output pulses of the generator are synchronized with a certain phase of the cathode heater current of the gun, and they can be repeated at a frequency between 100 and 0.4 Hz. The system is reliable and resistant to the overloads associated with breakdowns in the gun

Recent progress of ultrahigh voltage SiC devices for particle accelerator

International Nuclear Information System (INIS)

Fukuda, Kenji; Tsuji, Takashi; Shiomi, Hiromu; Mizushima, Tomonori; Yonezawa, Yoshiyuki; Kondo, Chikara; Otake, Yuji

2016-01-01

Silicon carbide (SiC) is the promising material for next power electronics technology used in the field such as HEV, EV, and railway, electric power infrastructure. SiC enables power devices with low loss to easily operate in an ultrahigh-voltage region because of the high breakdown electric field of SiC. In this paper, we report static and dynamic electric performances of 3300 V class SiC SBDs, IE-MOSFETs, >10 kV PiN diodes and IE-IGBTs. Especially, the electrical characteristics of IE-IGBT with the blocking voltage of 16.5 kV indicate the sufficient ability to convert the thyratron in high power RF system of an accelerator. (author)

Reliability of supply of switchgear for auxiliary low voltage in substations extra high voltage to high voltage

Directory of Open Access Journals (Sweden)

Perić Dragoslav M.

2015-01-01

Full Text Available Switchgear for auxiliary low voltage in substations (SS of extra high voltages (EHV to high voltage (HV - SS EHV/HV kV/kV is of special interest for the functioning of these important SS, as it provides a supply for system of protection and other vital functions of SS. The article addresses several characteristic examples involving MV lines with varying degrees of independence of their supply, and the possible application of direct transformation EHV/LV through special voltage transformers. Auxiliary sources such as inverters and diesel generators, which have limited power and expensive energy, are also used for the supply of switchgear for auxiliary low voltage. Corresponding reliability indices are calculated for all examples including mean expected annual engagement of diesel generators. The applicability of certain solutions of switchgear for auxiliary low voltage SS EHV/HV, taking into account their reliability, feasibility and cost-effectiveness is analyzed too. In particular, the analysis of applications of direct transformation EHV/LV for supply of switchgear for auxiliary low voltage, for both new and existing SS EHV/HV.

Analysis of copper contamination in transformer insulating material with nanosecond- and femtosecond-laser-induced breakdown spectroscopy

Science.gov (United States)

Aparna, N.; Vasa, N. J.; Sarathi, R.

2018-06-01

This work examines the oil-impregnated pressboard insulation of high-voltage power transformers, for the determination of copper contamination. Nanosecond- and femtosecond-laser-induced breakdown spectroscopy revealed atomic copper lines and molecular copper monoxide bands due to copper sulphide diffusion. X-ray diffraction studies also indicated the presence of CuO emission. Elemental and molecular mapping compared transformer insulating material ageing in different media—air, N2, He and vacuum.

Comparison of laser induced breakdown spectroscopy and spark induced breakdown spectroscopy for determination of mercury in soils

International Nuclear Information System (INIS)

Srungaram, Pavan K.; Ayyalasomayajula, Krishna K.; Yu-Yueh, Fang; Singh, Jagdish P.

2013-01-01

Mercury is a toxic element found throughout the environment. Elevated concentrations of mercury in soils are quite hazardous to plants growing in these soils and also the runoff of soils to nearby water bodies contaminates the water, endangering the flora and fauna of that region. This makes continuous monitoring of mercury very essential. This work compares two potential spectroscopic methods (laser induced breakdown spectroscopy (LIBS) and spark induced breakdown spectroscopy (SIBS)) at their optimum experimental conditions for mercury monitoring. For LIBS, pellets were prepared from soil samples of known concentration for generating a calibration curve while for SIBS, soil samples of known concentration were used in the powder form. The limits of detection (LODs) of Hg in soil were calculated from the Hg calibration curves. The LOD for mercury in soil calculated using LIBS and SIBS is 483 ppm and 20 ppm, respectively. The detection range for LIBS and SIBS is discussed. - Highlights: • We compared SIBS and LIBS for mercury (Hg) measurements in soil. • Hg 546.07 nm line was selected for both LIBS and SIBS measurements. • Limit of detection for Hg was found to be 20 ppm with SIBS and 483 ppm with LIBS

Comparison of laser induced breakdown spectroscopy and spark induced breakdown spectroscopy for determination of mercury in soils

Energy Technology Data Exchange (ETDEWEB)

Srungaram, Pavan K.; Ayyalasomayajula, Krishna K.; Yu-Yueh, Fang; Singh, Jagdish P., E-mail: singh@icet.msstate.edu

2013-09-01

Mercury is a toxic element found throughout the environment. Elevated concentrations of mercury in soils are quite hazardous to plants growing in these soils and also the runoff of soils to nearby water bodies contaminates the water, endangering the flora and fauna of that region. This makes continuous monitoring of mercury very essential. This work compares two potential spectroscopic methods (laser induced breakdown spectroscopy (LIBS) and spark induced breakdown spectroscopy (SIBS)) at their optimum experimental conditions for mercury monitoring. For LIBS, pellets were prepared from soil samples of known concentration for generating a calibration curve while for SIBS, soil samples of known concentration were used in the powder form. The limits of detection (LODs) of Hg in soil were calculated from the Hg calibration curves. The LOD for mercury in soil calculated using LIBS and SIBS is 483 ppm and 20 ppm, respectively. The detection range for LIBS and SIBS is discussed. - Highlights: • We compared SIBS and LIBS for mercury (Hg) measurements in soil. • Hg 546.07 nm line was selected for both LIBS and SIBS measurements. • Limit of detection for Hg was found to be 20 ppm with SIBS and 483 ppm with LIBS.

AC BREAKDOWN IN GASES

Science.gov (United States)

electron- emission (multipactor) region, and (3) the low-frequency region. The breakdown mechanism in each of these regions is explained. An extensive bibliography on AC breakdown in gases is included.

New perspectives in vacuum high voltage insulation. I. The transition to field emission

CERN Document Server

Diamond, W T

1998-01-01

Vacuum high-voltage insulation has been investigated for many years. Typically, electrical breakdown occurs between two broad-area electrodes at electric fields 100-1000 times lower than the breakdown field (about 5000 MV/m) between a well-prepared point cathode and a broad-area anode. Explanations of the large differences remain unsatisfactory, usually evoking field emission from small projections on the cathode that are subject to higher peak fields. The field emission then produces secondary effects that lead to breakdown. This article provides a significant resolution to this long standing problem. Field emission is not present at all fields, but typically starts after some process occurs at the cathode surface. Three effects have been identified that produce the transition to field emission: work function changes; mechanical changes produced by the strong electrical forces on the electrode surfaces; and gas desorption from the anode with sufficient density to support an avalanche discharge. Material adso...

Second harmonic electron cyclotron breakdown in stellarators

International Nuclear Information System (INIS)

Carter, M.D.; Batchelor, D.B.; England, A.C.

1987-01-01

In linear wave-particle interaction models, the coupling between cold electrons and microwaves with frequency equal to twice the electron gyrofrequency is so weak that the ionization of a significant number of neutral hydrogen atoms would seem impossible in practical applications. However, the non-linear interaction of a cold electron with the wave is very large if the electron becomes trapped near resonance in a shallow, static magnetic well. A model has been developed to describe the breakdown of a neutral gas when these non-linear interactions are considered, and it is in reasonable agreement with the limited amount of available experimental data. For gas pressures that are too large, electron-neutral collisions inhibit the non-linear interaction and prevent breakdown. For gas pressures that are too low, the growth rate of the free electron population is limited because electrons capable of causing ionization are lost before suffering a collision with a neutral. Quantitative growth rate predictions are presented for stellarators, and formulae for rough estimates are given. (author)

Cave breakdown by vadose weathering.

Directory of Open Access Journals (Sweden)

Osborne R. Armstrong L.

2002-01-01

Full Text Available Vadose weathering is a significant mechanism for initiating breakdown in caves. Vadose weathering of ore bodies, mineral veins, palaeokarst deposits, non-carbonate keystones and impure, altered or fractured bedrock, which is intersected by caves, will frequently result in breakdown. Breakdown is an active, ongoing process. Breakdown occurs throughout the vadose zone, and is not restricted to large diameter passages, or to cave ceilings. The surfaces of disarticulated blocks are commonly coated, rather than having fresh broken faces, and blocks continue to disintegrate after separating from the bedrock. Not only gypsum, but also hydromagnesite and aragonite are responsible for crystal wedging. It is impossible to study or identify potential breakdown foci by surface surveys alone, in-cave observation and mapping are essential.

["Nervous breakdown": a diagnostic characterization study].

Science.gov (United States)

Salmán, E; Carrasco, J L; Liebowitz, M; Díaz Marsá, M; Prieto, R; Jusino, C; Cárdenas, D; Klein, D

1997-01-01

An evaluation was made of the influence of different psychiatric co-morbidities on the symptoms of the disorder popularly known as "ataque de nervios" (nervous breakdown) among the US Hispanic population. Using a self-completed instrument designed specially for both traditional nervous breakdown and for panic symptoms, and structured or semi-structured psychiatric interviews for Axis I disorders, and evaluation was made of Hispanic subjects who sought treatment for anxiety in a clinic (n = 156). This study centered on 102 subjects who presented symptoms of "nervous breakdown" and comorbidity with panic disorder, other anxiety disorders, or affective disorder. Variations in co-morbidity with "nervous breakdown" enabled the identification of different patterns of "nervous breakdown" presenting symptoms. Individuals with "nervous breakdown" and panic disorder characteristically expressed a greater sense of asphyxiation, fear of dying, and growing fear (panic-like) during their breakdowns. Subjects with "nervous breakdown" and affective disorder had a greater sensation of anger and more tendency toward screaming and aggressive behavior such as breaking things during the breakdown (emotional anger). Finally, subjects with "nervous breakdown" and co-morbidity with another anxiety disorder had fewer "paniclike" or "emotional anger" symptoms. These findings suggest that: a) the widely used term "nervous breakdown" is a popular label for different patterns of loss of emotional control; b) the type of loss of emotional control is influenced by the associated psychiatric disorder; and c) the symptoms characteristics of the "nervous breakdown" can be useful clinical markers for associated psychiatric disorders. Future research is needed to determine whether the known Hispanic entity "ataque de nervios" is simply a popular description for different aspects of well-known psychiatric disorders, or if it reflects specific demographic, environmental, personality and/or clinical

Time and temperature dependent breakdown characteristics of ZnS:Mn films obtained by rf-magnetron sputtering

Science.gov (United States)

Zhigal'Skii, A. A.; Mukhachev, V. A.; Troyan, P. E.

1994-04-01

Breakdown delay times (tdel) for films of managanese-doped zinc sulfide (ZnS:Mn) were measured in the range 10-6-10-1 s. The maximum value was tdel=10-3-10-2 s. The electrical strength (Ebr) was found to increase as the voltage pulse duration was reduced, the more so the thinner the ZnS:Mn film. The temperature dependence of Ebr exhibited a weak reduction in Ebr as the temperature was raised to roughly 80°C and a sharp reduction in Ebr for T>130°C. A maximum in Ebr was observed at T≈130°C which is presumably explained by a structural modification of the ZnS:Mn film. The experimental results obtained are explained in terms of a combined electronic and thermal breakdown mechanism.

Fast Breakdown as Coronal/Ionization Waves?

Science.gov (United States)

Krehbiel, P. R.; Petersen, D.; da Silva, C. L.

2017-12-01

Studies of high-power narrow bipolar events (NBEs) have shown they are produced by a newly-recognized breakdown process called fast positive breakdown (FPB, Rison et al., 2016, doi:10.1038/ncomms10721). The breakdown was inferred to be produced by a system of positive streamers that propagate at high speed ( ˜3-6 x 107 m/s) due to occurring in a localized region of strong electric field. The polarity of the breakdown was determined from broadband interferometer (INTF) observations of the propagation direction of its VHF radiation, which was downward into the main negative charge region of a normally-electrified storm. Subsequent INTF observations being conducted in at Kennedy Space Center in Florida have shown a much greater incidence of NBEs than in New Mexico. Among the larger dataset have been clear-cut instances of some NBEs being produced by upward breakdown that would be of negative polarity. The speed and behavior of the negative breakdown is the same as that of the fast positive, leading to it being termed fast negative breakdown (FNB). The similarity (not too mention its occurrence) is surprising, given the fact that negative streamers and breakdown develops much differently than that of positive breakdown. The question is how this happens. In this study, we compare fast breakdown characteristics to well-known streamer properties as inferred from laboratory experiments and theoretical analysis. Additionally, we begin to explore the possibility that both polarities of fast breakdown are produced by what may be called coronal or ionization waves, in which the enhanced electric field produced by streamer or coronal breakdown of either polarity propagates away from the advancing front at the speed of light into a medium that is in a metastable condition of being at the threshold of hydrometeor-mediated corona onset or other ionization processes. The wave would develop at a faster speed than the streamer breakdown that gives rise to it, and thus would be

The physics of open-quotes vacuumclose quotes breakdown

International Nuclear Information System (INIS)

Schwirzke, F.; Hallal, M.P. Jr.; Maruyama, X.K.

1993-01-01

The initial plasma formation on the surface of a cathode of a vacuum diode, vacuum arc, and many other discharges is highly non-uniform. Micron-sized cathode spots form within nanoseconds. Despite the fundamental importance of cathode spots for the breakdown process, their structure, and the source of the required high energy density were not well understood. When an increasing voltage is applied, enhanced field emission of electrons begins from a growing number of small spots or whiskers. This and the impact of ions stimulate desorption of weakly bound adsorbates from the surface of a whisker. The cross section for ionization of the neutrals has a maximum for ∼ 100 eV electrons. As the diode voltage increases, the 100 V equipotential surface which moves towards the cathode is met by the desorbed neutrals moving away from the cathode. These two regions proceed from no overlap to a significant amount of overlap on a nanosecond time scale. This results in the sharp risetime for the onset of ionization. Ions produced in the ionization region, a few μm from the electron emitting spot are accelerated back. This bombardment with ∼ 100 eV ions leads to surface heating of the spot. Since the ion energy is deposited only within a few atomic layers at a time, the onset of breakdown by this mechanism requires much less current than the joule heating mechanism. Ion surface heating is initially orders of magnitude larger than joule heating. As more ions are produced, a positive space charge layer forms which enhances the electric field and thus strongly enhances the field emitted electron current. The localized build-up of plasma above the electron emitting spot then naturally leads to pressure and electric field distributions which ignite unipolar arcs. The high current density of the unipolar arc and the associated surface heating by ions provide the open-quotes explosiveclose quotes formation of a cathode spot plasma

A Model for the Onset of Vortex Breakdown

Science.gov (United States)

Mahesh, K.

1996-01-01

A large body of information exists on the breakdown of incompressible streamwise vortices. Less is known about vortex breakdown at high speeds. An interesting example of supersonic vortex breakdown is the breakdown induced by the interaction of vortices with shock waves. The flow in supersonic engine inlets and over high-speed delta wings constitute technologically important examples of this phenomenon, which is termed 'shock-induced vortex breakdown'. In this report, we propose a model to predict the onset of shock-induced vortex breakdown. The proposed model has no adjustable constants, and is compared to both experiment and computation. The model is then extended to consider two other problems: the breakdown of a free compressible vortex, and free incompressible vortex breakdown. The same breakdown criterion is used in all three problems to predict the onset of breakdown. Finally, a new breakdown map is proposed that allows the simultaneous comparison of data from flows ranging from incompressible breakdown to breakdown induced by a shock wave.

Voltage measurements at the vacuum post-hole convolute of the Z pulsed-power accelerator

Directory of Open Access Journals (Sweden)

E. M. Waisman

2014-12-01

Full Text Available Presented are voltage measurements taken near the load region on the Z pulsed-power accelerator using an inductive voltage monitor (IVM. Specifically, the IVM was connected to, and thus monitored the voltage at, the bottom level of the accelerator’s vacuum double post-hole convolute. Additional voltage and current measurements were taken at the accelerator’s vacuum-insulator stack (at a radius of 1.6 m by using standard D-dot and B-dot probes, respectively. During postprocessing, the measurements taken at the stack were translated to the location of the IVM measurements by using a lossless propagation model of the Z accelerator’s magnetically insulated transmission lines (MITLs and a lumped inductor model of the vacuum post-hole convolute. Across a wide variety of experiments conducted on the Z accelerator, the voltage histories obtained from the IVM and the lossless propagation technique agree well in overall shape and magnitude. However, large-amplitude, high-frequency oscillations are more pronounced in the IVM records. It is unclear whether these larger oscillations represent true voltage oscillations at the convolute or if they are due to noise pickup and/or transit-time effects and other resonant modes in the IVM. Results using a transit-time-correction technique and Fourier analysis support the latter. Regardless of which interpretation is correct, both true voltage oscillations and the excitement of resonant modes could be the result of transient electrical breakdowns in the post-hole convolute, though more information is required to determine definitively if such breakdowns occurred. Despite the larger oscillations in the IVM records, the general agreement found between the lossless propagation results and the results of the IVM shows that large voltages are transmitted efficiently through the MITLs on Z. These results are complementary to previous studies [R. D. McBride et al., Phys. Rev. ST Accel. Beams 13, 120401 (2010

RF BREAKDOWN STUDIES USING PRESSURIZED CAVITIES

Energy Technology Data Exchange (ETDEWEB)

Johnson, Rolland

2014-09-21

Many present and future particle accelerators are limited by the maximum electric gradient and peak surface fields that can be realized in RF cavities. Despite considerable effort, a comprehensive theory of RF breakdown has not been achieved and mitigation techniques to improve practical maximum accelerating gradients have had only limited success. Part of the problem is that RF breakdown in an evacuated cavity involves a complex mixture of effects, which include the geometry, metallurgy, and surface preparation of the accelerating structures and the make-up and pressure of the residual gas in which plasmas form. Studies showed that high gradients can be achieved quickly in 805 MHz RF cavities pressurized with dense hydrogen gas, as needed for muon cooling channels, without the need for long conditioning times, even in the presence of strong external magnetic fields. This positive result was expected because the dense gas can practically eliminate dark currents and multipacting. In this project we used this high pressure technique to suppress effects of residual vacuum and geometry that are found in evacuated cavities in order to isolate and study the role of the metallic surfaces in RF cavity breakdown as a function of magnetic field, frequency, and surface preparation. One of the interesting and useful outcomes of this project was the unanticipated collaborations with LANL and Fermilab that led to new insights as to the operation of evacuated normal-conducting RF cavities in high external magnetic fields. Other accomplishments included: (1) RF breakdown experiments to test the effects of SF6 dopant in H2 and He gases with Sn, Al, and Cu electrodes were carried out in an 805 MHz cavity and compared to calculations and computer simulations. The heavy corrosion caused by the SF6 components led to the suggestion that a small admixture of oxygen, instead of SF6, to the hydrogen would allow the same advantages without the corrosion in a practical muon beam line. (2) A

Prototype high voltage bushing: Configuration to its operational demonstration

Energy Technology Data Exchange (ETDEWEB)

Shah, Sejal, E-mail: sshah@iter-india.org [ITER-India, Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Sharma, D. [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Parmar, D.; Tyagi, H.; Joshi, K.; Shishangiya, H.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A. [ITER-India, Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)

2016-12-15

High Voltage Bushing (HVB) is the key component of Diagnostic Neutral Beam (DNB) system of ITER as it provides access to high voltage electrical, hydraulic, gas and diagnostic feedlines to the beam source with isolation from grounded vessel. HVB also provides primary vacuum confinement for the DNB system. Being Safety Important Class (SIC) component of ITER, it involves several configurational, technological and operational challenges. To ensure its operational performance & reliability, particularly electrostatic behavior, half scale down Prototype High Voltage Bushing (PHVB) is designed considering same design criteria of DNB HVB. Design optimization has been carried out followed by finite element (FE) analysis to obtain DNB HVB equivalent electric stress on different parts of PHVB, taking into account all design, manufacturing & space constraints. PHVB was tested up to 60 kV without breakdown, which validates its design for the envisaged operation of 50 kV DC. This paper presents the design of PHVB, FEA validation, manufacturing constraints, experimental layout with interfacing auxiliary systems and operational results related to functional performance.

Voltage-breakdown testing for an RFQ structure

International Nuclear Information System (INIS)

Williams, S.W.; DePaula, R.F.; Keffeler, D.R.; Rodenz, G.R.

1981-01-01

Designs for Radio Frequency Quadrupole (RFQ) accelerators of reasonable length require operation with surface fields above the threshold of Kilpatrick's Sparking Criterion. A cavity was designed using SUPERFISH to test the validity of this criterion and to determine operating limits for the Los Alamos Proof-of-Princple (POP) RFQ. The testing was done near 420 MHz, with varying qualities of surface finish on the electrodes. The experimental set-up and procedure are described, as are the data and results. A method of calibrating the test is presented

Mechanism of formation of subnanosecond current front in high-voltage pulse open discharge

Science.gov (United States)

Schweigert, I. V.; Alexandrov, A. L.; Zakrevsky, Dm. E.; Bokhan, P. A.

2014-11-01

The mechanism of subnanosecond current front rise observed previously in the experiment in high-voltage pulse open discharge in helium is studied in kinetic particle-in-cell simulations. The Boltzmann equations for electrons, ions, and fast atoms are solved self-consistently with the Poisson equations for the electrical potential. The partial contributions to the secondary electron emission from the ions, fast atoms, photons, and electrons, bombarding the electrode, are calculated. In simulations, as in the experiment, the discharge glows between two symmetrical cathodes and the anode grid in the midplane at P =6 Torr and the applied voltage of 20 kV. The electron avalanche development is considered for two experimental situations during the last stage of breakdown: (i) with constant voltage and (ii) with decreasing voltage. For case (i), the subnanosecond current front rise is set by photons from the collisional excitation transfer reactions. For the case (ii), the energetic electrons swamp the cathode during voltage drop and provide the secondary electron emission for the subnanosecond current rise, observed in the experiment.

High Voltage GaN Schottky Rectifiers

Energy Technology Data Exchange (ETDEWEB)

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

High voltage wide range marx generator design and construction

International Nuclear Information System (INIS)

Thompson, J.E.

1976-01-01

A wide range, long pulse, Marx generator has been designed and constructed for the purpose of exciting a thermionic electron gun utilized for quasi-cw gas laser medium ionization. The Marx generator has been specifically designed to operate over a voltage range variable from 100 kV to 200 kV into a resistive load of between 83 kΩ and open circuit. This wide operating range, both in voltage and load impedance, was obtained using interstage coupling capacitors to assure overvoltage and subsequent breakdown of the three element spark gap switches used. This paper will discuss the motivation and specific application for the Marx generator and will present the relevant design procedure with particular emphasis on the interstage coupling and triggering techniques employed. Experimental data regarding the measured Marx generator performance will also be presented

LIMIT SOLUTIONS OF EQUATIONS OF A DC HIGH-VOLTAGE CASCADE GENERATOR

Directory of Open Access Journals (Sweden)

V. O. Brzhezitsky

2015-04-01

Full Text Available In the paper the issue of calculating the high voltage cascade mode oscillator with a nonlinear load using the analytical method under different conditions of selection values of its components is presented. The peculiarity of the method of the study is that during multivariate calculations output parameters load generator remain unchanged. For high-voltage cascade direct current power found conditions under which can be significantly reduced high capacity capacitors cascade generator. The calculations show that acceptable for practical applications of high-voltage characteristics of cascade generators can be achieved with substantial reduction of the volume of their constituents, and thus substantial decline in their value.

Dynamic range of low-voltage cascode current mirrors

DEFF Research Database (Denmark)

Bruun, Erik; Shah, Peter Jivan

1995-01-01

Low-voltage cascode current mirrors are reviewed with respect to the design limitations imposed if all transistors in the mirror are required to operate in the saturation region. It is found that both a lower limit and an upper limit exist for the cascode transistor bias voltage. Further, the use....... The proposed configuration has the advantage of simplicity combined with a complete elimination of the need for fixed bias voltages or bias currents in the current mirror. A disadvantage is that it requires a higher input voltage to the current mirror...

Techniques of surface optical breakdown prevention for low-depths femtosecond waveguides writing

International Nuclear Information System (INIS)

Bukharin, M A; Skryabin, N N; Ganin, D V; Khudyakov, D V; Vartapetov, S.K.

2016-01-01

We demonstrated technique of direct femtosecond waveguide writing at record low depth (2-15 μm) under surface of lithium niobate, that play a key role in design of electrooptical modulators with low operating voltage. To prevent optical breakdown of crystal surface we used high numerical aperture objectives for focusing of light and non-thermal regime of inscription in contrast to widespread femtosecond writing technique at depths of tens micrometers or higher. Surface optical breakdown threshold was measured for both x- and z- cut crystals. Inscribed waveguides were examined for intrinsic microstructure. It also reported sharp narrowing of operating pulses energy range with writing depth under the surface of crystal, that should be taken in account when near-surface waveguides design. Novelty of the results consists in reduction of inscription depth under the surface of crystals that broadens applications of direct femtosecond writing technique to full formation of near-surface waveguides and postproduction precise geometry correction of near-surfaces optical integrated circuits produced with proton-exchanged technique. (paper)

Reliability of high-voltage pulse capacitors operating in large energy storages

International Nuclear Information System (INIS)

Kuchinskij, G.S.; Fedorova, V.S.; Shilin, O.V.

1982-01-01

To improve the reliability of pulse capacitors operating in capacitive energy storages, processes, resulting in break-down of capacitor insulation were investigated. A statistic model of failures was constructed and reliability of real capacitors, functioning at operating electric intensity Usub(oper) equal 70 kV/mm and at elevated intensity 90 kV/mm was calculated. Results of testing the IK50-ZU4 capacitor are given. The form of the capacitor service life distribution function was specified. To provide and confirm the assigned capacitor reliability, it is necessary to speed up tests at a higher voltage (1.3-1.5) Usub(oper). To improve the capacitor reliability, it is advisable to conduct acceptance tests, which include hold at increased constant voltage (1.3-1.5) Usub(oper) during 1-3 min and the effect of pulses of increased voltage (1.2-1.3) Usub(oper) with the pulse shape corresponding to operating conditions

The appearance of microparticles in accelerator tubes

International Nuclear Information System (INIS)

Griffiths, G.L.; Eastham, D.A.; Kivlin, F.J.

1978-07-01

Microparticles have been found in submodules of accelerator tubes during the voltage conditioning process. The microparticle detector uses electrostatic induction and time-of-flight measurements to determine the charge and velocity of microparticles. Preliminary measurements with a charge sensitive limit of about 5 x 10 -15 C proves the presence of microparticles at a threshold voltage well below the onset of microdischarges or voltage breakdown. No direct evidence relating microparticles to the initiation of electrical breakdown has been found in this experiment. (author)

Grid Filter Design for a Multi-Megawatt Medium-Voltage Voltage Source Inverter

DEFF Research Database (Denmark)

Rockhill, A.A.; Liserre, Marco; Teodorescu, Remus

2011-01-01

This paper describes the design procedure and performance of an LCL grid filter for a medium-voltage neutral point clamped (NPC) converter to be adopted for a multimegawatt wind turbine. The unique filter design challenges in this application are driven by a combination of the medium voltage...... converter, a limited allowable switching frequency, component physical size and weight concerns, and the stringent limits for allowable injected current harmonics. Traditional design procedures of grid filters for lower power and higher switching frequency converters are not valid for a multi......-megawatt filter connecting a medium-voltage converter switching at low frequency to the electric grid. This paper demonstrates a frequency domain model based approach to determine the optimum filter parameters that provide the necessary performance under all operating conditions given the necessary design...

Development of high voltage surge limiting resistor for protection of HV multiplier of 3 MeV DC accelerator

International Nuclear Information System (INIS)

Dewangan, S.; Sharma, D.K.; Bakhtsingh, R.I.

2013-01-01

A 3MeV, 10mA DC electron beam accelerator is in commissioning stages at EBC, Kharghar, Navi Mumbai. The accelerating potential of -3MV is generated by a Parallel Coupled Voltage Multiplier (PCVM) scheme using 74 stages of HV rectifier stacks in the 6 kg/cm 2 SF6 gas environment. The HV surges of order of 600kV, 42kA, 10ns is estimated across the rectifier stacks during sparking in the multiplier column. To limit the surge current and protect the rectifier diodes, a non inductive thick film surge limiting resistor (SLR) and protective spark gap is designed and developed. The rectifier stacks with surge limiting resistors at both the ends and protective spark gap in parallel has been successfully tested in simulated surge condition at an impulse voltage of 212kVp, 150ns FWHM and surge energy of 200J, 10ms, 20kV at 6kg/cm 2 SF6 gas environment and found satisfactorily. Subsequently the HV multiplier was installed with this surge protection scheme and is being tested at 1.2 MeV level. This paper describes the design features and test results of the non-inductive surge limiting resistor. (author)

On dielectric breakdown statistics

International Nuclear Information System (INIS)

Tuncer, Enis; James, D Randy; Sauers, Isidor; Ellis, Alvin R; Pace, Marshall O

2006-01-01

In this paper, we investigate the dielectric breakdown data of some insulating materials and focus on the applicability of the two- and three-parameter Weibull distributions. A new distribution function is also proposed. In order to assess the model distribution's trustworthiness, we employ the Monte Carlo technique and, randomly selecting data-subsets from the whole dielectric breakdown data, determine whether the selected probability functions accurately describe the breakdown data. The utility and strength of the proposed expression are illustrated distinctly by the numerical procedure. The proposed expression is shown to be a valuable alternative to the Weibull ones

Filament-induced remote surface ablation for long range laser-induced breakdown spectroscopy operation

International Nuclear Information System (INIS)

Rohwetter, Ph.; Stelmaszczyk, K.; Woeste, L.; Ackermann, R.; Mejean, G.; Salmon, E.; Kasparian, J.; Yu, J.; Wolf, J.-P.

2005-01-01

We demonstrate laser induced ablation and plasma line emission from a metallic target at distances up to 180 m from the laser, using filaments (self-guided propagation structures ∼ 100 μm in diameter and ∼ 5 x 10 13 W/cm 2 in intensity) appearing as femtosecond and terawatt laser pulses propagating in air. The remarkable property of filaments to propagate over a long distance independently of the diffraction limit opens the frontier to long range operation of the laser-induced breakdown spectroscopy technique. We call this special configuration of remote laser-induced breakdown spectroscopy 'remote filament-induced breakdown spectroscopy'. Our results show main features of filament-induced ablation on the surface of a metallic sample and associated plasma emission. Our experimental data allow us to estimate requirements for the detection system needed for kilometer-range remote filament-induced breakdown spectroscopy experiment

Three-dimensional supersonic vortex breakdown

Science.gov (United States)

Kandil, Osama A.; Kandil, Hamdy A.; Liu, C. H.

1993-01-01

Three-dimensional supersonic vortex-breakdown problems in bound and unbound domains are solved. The solutions are obtained using the time-accurate integration of the unsteady, compressible, full Navier-Stokes (NS) equations. The computational scheme is an implicit, upwind, flux-difference splitting, finite-volume scheme. Two vortex-breakdown applications are considered in the present paper. The first is for a supersonic swirling jet which is issued from a nozzle into a supersonic uniform flow at a lower Mach number than that of the swirling jet. The second is for a supersonic swirling flow in a configured circular duct. In the first application, an extensive study of the effects of grid fineness, shape and grid-point distribution on the vortex breakdown is presented. Four grids are used in this study and they show a substantial dependence of the breakdown bubble and shock wave on the grid used. In the second application, the bubble-type and helix-type vortex breakdown have been captured.

Shock/vortex interaction and vortex-breakdown modes

Science.gov (United States)

Kandil, Osama A.; Kandil, H. A.; Liu, C. H.

1992-01-01

Computational simulation and study of shock/vortex interaction and vortex-breakdown modes are considered for bound (internal) and unbound (external) flow domains. The problem is formulated using the unsteady, compressible, full Navier-Stokes (NS) equations which are solved using an implicit, flux-difference splitting, finite-volume scheme. For the bound flow domain, a supersonic swirling flow is considered in a configured circular duct and the problem is solved for quasi-axisymmetric and three-dimensional flows. For the unbound domain, a supersonic swirling flow issued from a nozzle into a uniform supersonic flow of lower Mach number is considered for quasi-axisymmetric and three-dimensional flows. The results show several modes of breakdown; e.g., no-breakdown, transient single-bubble breakdown, transient multi-bubble breakdown, periodic multi-bubble multi-frequency breakdown and helical breakdown.

High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

Science.gov (United States)

Hernandez-Garcia, C.; Bullard, D.; Hannon, F.; Wang, Y.; Poelker, M.

2017-09-01

The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain work, we describe a centrifugal barrel-polishing technique commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (˜11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.

Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

Science.gov (United States)

Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

1998-01-01

A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

The electric strength of high-voltage transformers insulation at effect of partial dischargers

International Nuclear Information System (INIS)

Khoshravan, E.; Zeraatparvar, A.; Gashimov, A.M.; Mehdizadeh, R.N.

2001-01-01

Full text : In paper the change of electric strength of high-voltage transformers insulation at the effect of partial discharges with space charge accumulation was investigated. It is revealed that the effect of partial discharges of insulation materials results the reduction of their pulsing electric strength which can restore the own initial value at releasing of saved charge the volume of a material under condition of absence the ineversible structural changes in it. Researches of high-voltage transformers insulation's non-failure operation conditions show, that at increasing of insulation work time in a strong electrical field the reduction of average breakdown voltages with simultaneous increasing of spread in discharge voltage values takes place. It authentically testifies to reduction of short-time discharge voltage of insulation materials during their electrical aging. As the basic reason of insulation electrical aging the partial discharges occurring in gas cavities inside insulation were considered. It is known that the space charges will be formed in insulation elements of high-voltage devices which effects in dielectrical property of these elements including the electric strength and the space charge formation can occur also at partial discharges in an alternating voltage while the service of high-voltage transformers. In the given work the experiments in revealing separate influence partial discharges in pulsing electric strength of insulation materials at presence and at absence inside them the space charge were spent

Dark Current And Voltage Measurements Of Metal-Organic-Semiconductor (M-Or-S) Diode

International Nuclear Information System (INIS)

Adianto

1996-01-01

. Some Metal-Organic-Semiconductor (M-Or-S) thin film diodes, constructed with an organic polymer (polymerized toluene) as an active component has been successfully fabricated. The thin film M-Or-S diodes were fabricated on an n-type silicon with resistivity of 250-500 Ocm and p type silicon with resistivity of 10-20 Ocm as a substrate with polymerized toluene used as insulator. When deposited on silicon wafers with electrode of evaporated Ni on the n-type silicon and evaporated Au as the electrode on the polymerized toluene film, the electronic devices of Metal-Organic- Semiconductor (M-Or-S) type can be produced with one of its characteristics is that their light sensitivity. A plasma ion deposition system was constructed and used to deposit organic monomeric substance (toluene) that functioned as an isolator between semiconductor and the evaporated metal electrodes. The current-voltage measurements for different configurations of M-Or-S devices were carried out to determine the current-voltage (1-V) characteristics for M-Or-S devices with different materials and thicknesses. In addition to the 1-V measurement mentioned before, 1-V measurements of the devices were also carried out by using a curve tracer oscilloscope, and the picture of the effective parameters of each of the device could be taken by using a polaroid camera. Since the devices are very sensitive to light, the devices were all tested in a black-box which was covered by a black cloth to make sure that there was no light coming through. The experimental results for p- and n-type silicon substrates showed that an M-Or-S diode with n-type gave a higher breakdown voltage than that p- type silicon. In addition, the reverse bias breakdown voltage increased as the thickness of the thin film increased in the range of 50 -2500 V/μm

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

Energy Technology Data Exchange (ETDEWEB)

Erofeev, E. V., E-mail: erofeev@micran.ru [Tomsk State University of Control Systems and Radioelectronics, Research Institute of Electrical-Communication Systems (Russian Federation); Fedin, I. V.; Kutkov, I. V. [Research and Production Company “Micran” (Russian Federation); Yuryev, Yu. N. [National Research Tomsk Polytechnic University, Institute of Physics and Technology (Russian Federation)

2017-02-15

High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping level makes it possible to attain a threshold voltage of GaN transistors close to V{sub th} = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V{sub th} = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

International Nuclear Information System (INIS)

Erofeev, E. V.; Fedin, I. V.; Kutkov, I. V.; Yuryev, Yu. N.

2017-01-01

High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping level makes it possible to attain a threshold voltage of GaN transistors close to V_t_h = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V_t_h = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.

Power conditioning accessories. Construction of a delayed drop-out relay and test of constant voltage transformers

International Nuclear Information System (INIS)

Keroe, E.; Kaufmann, H.; Koeck, J.; Scarpatetti, R.; Vuister, P.

1983-10-01

A delayed drop-out relay aimed to protect electronic measuring equipment during voltage fluctuations and power failures and transients is described. The results of a test on the performance of three resonant voltage transformers (GOULD GT 3000, CVT Isoreg 15-025 and Philips 1412/00) coupled with this relay, are presented. It is found that with this set-up, instrument malfunction and breakdown can be effectively prevented under the normal power conditions met in European countries or the USA. Under more severe conditions, usually met in the developing countries, a more careful selection has to be made; the test recommends the Philips transformer. It is also recommended that for best results the constant voltage transformers should be used at 75-80% of their rated power

Radiation tests on selected electrical insulating materials for high-power and high voltage application

International Nuclear Information System (INIS)

Liptak, G.; Schuler, R.; Haberthuer, B.; Mueller, H.; Zeier, W.; Maier, P.; Schoenbacher, H.

1985-01-01

This report presents a comprehensive set of test results on the irradiation of insulating materials and systems used for the windings of rotating machines, dry-type transformers, and magnet coils. The materials were: Novolac, bisphenol-A, and cycloaliphatic types of epoxy; saturated and unsaturated polyesterimide; silicone, phenolic, and acrylic resins. The reinforcement consisted of glass mat, glass roving, glass cloth, mica paper, polyester mat, polyester roving, polyester cloth, aromatic polyamide paper, or combinations thereof. The materials were irradiated in an 8 MW pool reactor up to integrated doses of 10 8 Gy. On most samples, flexural properties were examined as recommended by IEC Standard 544. For tapes and varnishes, the breakdown voltage was measured. The adhesion of copper bars glued together with an epoxy resin was examined by means of a lap-shear test. A cupping test by means of the Erichsen apparatus was used to measure the flexibility of varnishes. The results are presented in tables and graphs for each of the materials tested. Those from mechanical tests show that the radiation resistance of composite resin-rich insulations depends not only on the base resin combination and the reinforcement material but, to a large degree, also on the adhesion between the two. It appears that better adhesion, and consequently higher radiation resistance, is obtained by special surface treatments of glass fibres. For laminates, higher radiation resistance is obtained with glass mat and resin combinations than with glass cloth as reinforcing materials. The breakdown voltage tests show that the application of mechanical stress to most irradiated samples causes the insulation layer to crack, resulting in lower dielectric strength. For a number of materials, the critical properties of flexural strength and breakdown voltage are above 50% of the initial value at doses between 10 7 and 10 8 Gy, i.e. a radiation index of 7 to 8 at 10 5 Gy/h. (orig.)

Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit

Science.gov (United States)

Yang, Jiancheng; Ren, F.; Tadjer, Marko; Pearton, S. J.; Kuramata, A.

2018-05-01

A key goal for Ga2O3 rectifiers is to achieve high forward currents and high reverse breakdown voltages. Field-plated β-Ga2O3 Schottky rectifiers with area 0.01 cm2, fabricated on 10 μm thick, lightly-doped drift regions (1.33 x 1016 cm-3) on heavily-doped (3.6 x 1018 cm-3) substrates, exhibited forward current density of 100A.cm-2 at 2.1 V, with absolute current of 1 A at this voltage and a reverse breakdown voltage (VB) of 650V. The on-resistance (RON) was 1.58 x 10-2 Ω.cm2, producing a figure of merit (VB2/RON) of 26.5 MW.cm-2. The Schottky barrier height of the Ni was 1.04 eV, with an ideality factor of 1.02. The on/off ratio was in the range 3.3 x 106 - 5.7 x 109 for reverse biases between 5 and 100V. The reverse recovery time was ˜30 ns for switching from +2V to -5V. The results show the capability of β-Ga2O3 rectifiers to achieve exceptional performance in both forward and reverse bias conditions.

Computer code determination of tolerable accel current and voltage limits during startup of an 80 kV MFTF sustaining neutral beam source

International Nuclear Information System (INIS)

Mayhall, D.J.; Eckard, R.D.

1979-01-01

We have used a Lawrence Livermore Laboratory (LLL) version of the WOLF ion source extractor design computer code to determine tolerable accel current and voltage limits during startup of a prototype 80 kV Mirror Fusion Test Facility (MFTF) sustaining neutral beam source. Arc current limits are also estimated. The source extractor has gaps of 0.236, 0.721, and 0.155 cm. The effective ion mass is 2.77 AMU. The measured optimum accel current density is 0.266 A/cm 2 . The gradient grid electrode runs at 5/6 V/sub a/ (accel voltage). The suppressor electrode voltage is zero for V/sub a/ < 3 kV and -3 kV for V/sub a/ greater than or equal to 3 kV. The accel current density for optimum beam divergence is obtained for 1 less than or equal to V/sub a/ less than or equal to 80 kV, as are the beam divergence and emittance

Surface behavior based on ion-induced secondary electron emission from semi-insulating materials in breakdown evolution

Energy Technology Data Exchange (ETDEWEB)

Koc, Emrah; Karakoese, Sema [Department of Physics, Faculty of Sciences, Gazi University, 06500 Ankara (Turkey); Salamov, Bahtiyar G. [Department of Physics, Faculty of Sciences, Gazi University, 06500 Ankara (Turkey); Institute of Physics, National Academy of Science, 1143 Baku (Azerbaijan)

2013-09-15

This study focuses on analyses of secondary electron emission (SEE) at semiconductor surfaces when the sufficient conditions of space-time distribution occur. Experimental measurements and calculations with the approach of Townsend coefficients, which include the evaluations of ionization coefficient ({alpha}) and SEE coefficient ({gamma}) were performed in high-ohmic InP, GaAs, and Si semiconductor cathodes with argon and air environments in a wide range of E/N (300-10 000 Td). The direct calculations of {gamma} were carried out to determine the behavior of cold-semiconductor cathode current in a wide range of microgaps (45-525 {mu}m). Paschen curves are interpreted in the dependence of large pd range on breakdown voltage through {gamma} and {alpha}/N. Ion-induced secondary electrons exhibit the direct behaviors affecting the timescale of breakdown evolution in the vicinity of the Paschen minimum during the natural bombardment process with ions of semiconductor cathodes. Also, when {alpha}/N rapidly drops and the excitations of gas atoms densely occupy the gas volume, we determined that the photoelectric effect provides a growth for electron emission from semiconductor surfaces at the breakdown stage at the reduced values of E/N. At all pressures, the emission magnitudes of electrons liberated by semiconductor cathodes into vacuum are found as {gamma}{sub InP} > {gamma}{sub GaAs} > {gamma}{sub Si} in breakdown evolution. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Skin breakdown in acute care pediatrics.

Science.gov (United States)

Suddaby, Elizabeth C; Barnett, Scott D; Facteau, Lorna

2006-04-01

The purpose of this study was to develop a simple, single-page measurement tool that evaluates risk of skin breakdown in the peadiatric population and apply it to the acutely hospitalized child. Data were collected over a 15-month period from 347 patients on four in-patient units (PICU, medical-surgical, oncology, and adolescents) on skin breakdown using the AHCPR staging guidelines and compared to the total score on the Starkid SkinScale in order to determine its ability to predict skin breakdown. The inter-rater reliability of the Starkid Skin Scale was r2 = 0.85 with an internal reliablity of 0.71. The sensitivity of the total score was low (17.5%) but highly specific (98.5%). The prevalence of skin breakdown in the acutely hospitalized child was 23%, the majority (77.5%) occurring as erythema of the skin. Buttocks, perineum, and occiput were the most common locations of breakdown. Occiput breakdown was more common in critically ill (PICU) patients while diaper dermatitis was more common in the general medical-surgical population.

Bubble behavior and breakdown characteristics in LHe under simulating quench condition of S.C. magnet

Energy Technology Data Exchange (ETDEWEB)

Wang, Z.; Yoshizuka, H.; Takano, K.; Hara, M. [Kyushu University, Fukuoka (Japan)

1996-09-20

In large superconducting magneto, liquid helium is usually used both as coolant and electrical insulator. An abnormal high voltage and thermal bubbles often appear simultaneously during the quenching period. Such an incident is thought serious from a point of view of electrical insulation. In this work, thermal bubble behavior affected by the electrostatic forces in liquid helium and electrical breakdown mechanism of liquid helium are studied under the simulating quench condition of S.C magnet. The results show that (1) the electrostatic forces produced by nonuniform electric field are useful for reducing the effect of thermal bubbles on electrical breakdown in almost all cases, although the bubble aggregation occurs in the region where the gradient force is counterbalancing with the buoyancy and (2) the fins on the surface of superconducting wires are helpful to prevent the bubbles from being released into strong field region if the groove between fins is formed along the field decreasing direction on the wire surface. 11 refs., 14 figs., 1 tab.

Conditions for electron runaway under leader breakdown of long gaps

International Nuclear Information System (INIS)

Ul'yanov, K. N.

2008-01-01

An original hydrodynamic model in which inelastic collisions in the equations of motion and energy balance play a decisive role is developed and applied to simulate electron avalanches in strong electric fields. The mean energy and drift velocity of electrons, as well as the ionization coefficient and electric field in a wide range of mean electron energies, are determined for helium and xenon. A criterion is derived for the runaway of the average electron in discharges with ionization multiplication. It is shown that runaway can take place at any value of E/p, provided that the momentum mean free path exceeds the gap length. The voltage corresponding to electron runaway is found for helium, xenon, and air as a function of the electric field, the electron mean energy, and the parameter pd. Conditions for the formation of a precursor in electronegative gases are analyzed. It is shown that the presence of a precursor with a high electric conductance is necessary for the formation of a new leader step. The voltage and time ranges corresponding to efficient electron runaway and X-ray generation during leader breakdown in air are determined

Impacts of Voltage Control Methods on Distribution Circuit’s Photovoltaic (PV Integration Limits

Directory of Open Access Journals (Sweden)

Anamika Dubey

2017-10-01

Full Text Available The widespread integration of photovoltaic (PV units may result in a number of operational issues for the utility distribution system. The advances in smart-grid technologies with better communication and control capabilities may help to mitigate these challenges. The objective of this paper is to evaluate multiple voltage control methods and compare their effectiveness in mitigating the impacts of high levels of PV penetrations on distribution system voltages. A Monte Carlo based stochastic analysis framework is used to evaluate the impacts of PV integration, with and without voltage control. Both snapshot power flow and time-series analysis are conducted for the feeder with varying levels of PV penetrations. The methods are compared for their impacts on (1 the feeder’s PV hosting capacity; (2 the number of voltage violations and the magnitude of the largest bus voltage; (3 the net reactive power demand from the substation; and (4 the number of switching operations of feeder’s legacy voltage support devices i.e., capacitor banks and load tap changers (LTCs. The simulation results show that voltage control help in mitigating overvoltage concerns and increasing the feeder’s hosting capacity. Although, the legacy control solves the voltage concerns for primary feeders, a smart inverter control is required to mitigate both primary and secondary feeder voltage regulation issues. The smart inverter control, however, increases the feeder’s reactive power demand and the number of LTC and capacitor switching operations. For the 34.5-kV test circuit, it is observed that the reactive power demand increases from 0 to 6.8 MVAR on enabling Volt-VAR control for PV inverters. The total number of capacitor and LTC operations over a 1-year period also increases from 455 operations to 1991 operations with Volt-VAR control mode. It is also demonstrated that by simply changing the control mode of capacitor banks, a significant reduction in the unnecessary

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

International Nuclear Information System (INIS)

Ma Xiao-Hua; Zhang Ya-Man; Chen Wei-Wei; Wang Xin-Hua; Yuan Ting-Ting; Pang Lei; Liu Xin-Yu

2015-01-01

In this paper, the off-state breakdown characteristics of two different AlGaN/GaN high electron mobility transistors (HEMTs), featuring a 50-nm and a 150-nm GaN thick channel layer, respectively, are compared. The HEMT with a thick channel exhibits a little larger pinch-off drain current but significantly enhanced off-state breakdown voltage (BV off ). Device simulation indicates that thickening the channel increases the drain-induced barrier lowering (DIBL) but reduces the lateral electric field in the channel and buffer underneath the gate. The increase of BV off in the thick channel device is due to the reduction of the electric field. These results demonstrate that it is necessary to select an appropriate channel thickness to balance DIBL and BV off in AlGaN/GaN HEMTs. (paper)

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Science.gov (United States)

Cao, Y.; Chu, R.; Li, R.; Chen, M.; Chang, R.; Hughes, B.

2016-02-01

Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm-3 and 3 × 1019 cm-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments

Science.gov (United States)

Lükens, G.; Yacoub, H.; Kalisch, H.; Vescan, A.

2016-05-01

The interface charge density between the gate dielectric and an AlGaN/GaN heterostructure has a significant impact on the absolute value and stability of the threshold voltage Vth of metal-insulator-semiconductor (MIS) heterostructure field effect transistor. It is shown that a dry-etching step (as typically necessary for normally off devices engineered by gate-recessing) before the Al2O3 gate dielectric deposition introduces a high positive interface charge density. Its origin is most likely donor-type trap states shifting Vth to large negative values, which is detrimental for normally off devices. We investigate the influence of oxygen plasma annealing techniques of the dry-etched AlGaN/GaN surface by capacitance-voltage measurements and demonstrate that the positive interface charge density can be effectively compensated. Furthermore, only a low Vth hysteresis is observable making this approach suitable for threshold voltage engineering. Analysis of the electrostatics in the investigated MIS structures reveals that the maximum Vth shift to positive voltages achievable is fundamentally limited by the onset of accumulation of holes at the dielectric/barrier interface. In the case of the Al2O3/Al0.26Ga0.74N/GaN material system, this maximum threshold voltage shift is limited to 2.3 V.

Nuclear envelope breakdown induced by herpes simplex virus type 1 involves the activity of viral fusion proteins

Energy Technology Data Exchange (ETDEWEB)

Maric, Martina; Haugo, Alison C. [Department of Microbiology, University of Iowa, Iowa City, IA 52242 (United States); Dauer, William [Department of Neurology, University of Michigan, Ann Arbor, MI 48109 (United States); Johnson, David [Department of Microbiology and Immunology, Oregon Health Sciences University, Portland, OR 97201 (United States); Roller, Richard J., E-mail: richard-roller@uiowa.edu [Department of Microbiology, University of Iowa, Iowa City, IA 52242 (United States)

2014-07-15

Herpesvirus infection reorganizes components of the nuclear lamina usually without loss of integrity of the nuclear membranes. We report that wild-type HSV infection can cause dissolution of the nuclear envelope in transformed mouse embryonic fibroblasts that do not express torsinA. Nuclear envelope breakdown is accompanied by an eight-fold inhibition of virus replication. Breakdown of the membrane is much more limited during infection with viruses that lack the gB and gH genes, suggesting that breakdown involves factors that promote fusion at the nuclear membrane. Nuclear envelope breakdown is also inhibited during infection with virus that does not express UL34, but is enhanced when the US3 gene is deleted, suggesting that envelope breakdown may be enhanced by nuclear lamina disruption. Nuclear envelope breakdown cannot compensate for deletion of the UL34 gene suggesting that mixing of nuclear and cytoplasmic contents is insufficient to bypass loss of the normal nuclear egress pathway. - Highlights: • We show that wild-type HSV can induce breakdown of the nuclear envelope in a specific cell system. • The viral fusion proteins gB and gH are required for induction of nuclear envelope breakdown. • Nuclear envelope breakdown cannot compensate for deletion of the HSV UL34 gene.

On the dynamics of a subnanosecond breakdown in nitrogen below atmospheric pressures

Energy Technology Data Exchange (ETDEWEB)

Shklyaev, V. A., E-mail: shklyaev@to.hcei.tsc.ru, E-mail: beh@loi.hcei.tsc.ru [Laboratory of Theoretical Physics, Institute of High Current Electronics, Russian Academy of Sciences, 2/3 Akademichesky Ave., 634055 Tomsk (Russian Federation); Institute of High Technology Physics, National Research Tomsk Polytechnic University, 30 Lenin Avenue, 634050 Tomsk (Russian Federation); Baksht, E. Kh., E-mail: shklyaev@to.hcei.tsc.ru, E-mail: beh@loi.hcei.tsc.ru; Tarasenko, V. F. [Laboratory of Optical Radiations, Institute of High Current Electronics, Russian Academy of Sciences, 2/3 Akademichesky Ave., 634055 Tomsk (Russian Federation); Belomyttsev, S. Ya.; Grishkov, A. A. [Laboratory of Theoretical Physics, Institute of High Current Electronics, Russian Academy of Sciences, 2/3 Akademichesky Ave., 634055 Tomsk (Russian Federation); Burachenko, A. G. [Laboratory of Optical Radiations, Institute of High Current Electronics, Russian Academy of Sciences, 2/3 Akademichesky Ave., 634055 Tomsk (Russian Federation); Laboratory of Low Temperature Plasma, Tomsk State University, 36 Lenin Ave., 634050 Tomsk (Russian Federation)

2015-12-07

The dynamics of a breakdown in a gas-filled diode with a highly inhomogeneous electric field was studied in experiments at a time resolution of ∼100 ps and in numerical simulation by the 2D axisymmetric particle-in-cell (PIC) code XOOPIC. The diode was filled with nitrogen at pressures of up to 100 Torr. The dynamics of the electric field distribution in the diode during the breakdown was analyzed, and the factors that limit the pulse duration of the runaway electron beam current at different pressures were determined.

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

Science.gov (United States)

Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

2011-01-01

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

Power dithering algorithm to avoid the overcoming of the voltage limit in presence of DG on distribution networks

Energy Technology Data Exchange (ETDEWEB)

Calderaro, V.; Coppola, V.; Galdi, V.; Piccolo, A. [Salerno Univ., Fisciano (Italy). Dept. of Information System Engineering and Electrical Engineering

2008-07-01

A new model of power distribution system has emerged in recent years in response to new generation technologies involving mini- and micro-generators that can be directly connected to medium voltage (MV) or low voltage (LV) power grids. The locations of these dispersed generators (DGs) are typically based on the availability of primary energy resources or on the specific needs of users. The increasing use of DGs causes new problems in terms of distribution network management and planning, with effect on the power quality, voltage profile or protection aspects. One of the problems arising on MV/LV distribution network, especially in weak rural areas, is related to the bus overvoltage at the point of common coupling (PCC). Therefore, this study proposed an approach to power control of the single generator that maximizes the active power injected on the network by DG, avoiding the trip of the minimum and maximum voltage protection installed at the PCC. Overvoltage typically occurs due to the injection of a large amount of power from unschedulable DG and a small power demand by the loads. This can trip overvoltage protection relays of DGs, and disconnect them from the grid. The local control strategy for DG systems proposed in this paper was based on the dithering algorithm. The proposed solution, operating on the electronic interface of the power generator, introduces or absorbs reactive power if the voltage at PCC is close to the limits, thus increasing the total active power injected by renewable sources. 17 refs., 3 tabs., 12 figs.

Experimental study of vortex breakdown in a cylindrical, swirling flow

Science.gov (United States)

Stevens, J. L.; Celik, Z. Z.; Cantwell, B. J.; Lopez, J. M.

1996-01-01

The stability of a steady, vortical flow in a cylindrical container with one rotating endwall has been experimentally examined to gain insight into the process of vortex breakdowwn. The dynamics of the flow are governed by the Reynolds number (Re) and the aspect ratio of the cylinder. Re is given by Omega R(sup 2)/nu, where Omega is the speed of rotation of the endwall, R is the cylinder radius, and nu is the kinematic viscosity of the fluid filling the cylinder. The aspect ratio is H/R, where H is the height of the cylinder. Numerical simulation studies disagree whether or not the steady breakdown is stable beyond a critical Reynolds number, Re(sub c). Previous experimental researches have considered the steady and unsteady flows near Re(sub c), but have not explored the stability of the steady breakdown structures beyond this value. In this investigation, laser induced fluorescence was utilized to observe both steady and unsteady vortex breakdown at a fixed H/R of 2.5 with Re varying around Re(sub c). When the Re of a steady flow was slowly increased beyond Re(sub c), the breakdown structure remained steady even though unsteadiness was possible. In addition, a number of hysteresis events involving the oscillation periods of the unsteady flow were noted. The results show that both steady and unsteady vortex breakdown occur for a limited range of Re above Re(sub c). Also, with increasing Re, complex flow transformations take place that alter the period at which the unsteady flow oscillates.

Nuclear envelope breakdown induced by herpes simplex virus type 1 involves the activity of viral fusion proteins.

Science.gov (United States)

Maric, Martina; Haugo, Alison C; Dauer, William; Johnson, David; Roller, Richard J

2014-07-01

Herpesvirus infection reorganizes components of the nuclear lamina usually without loss of integrity of the nuclear membranes. We report that wild-type HSV infection can cause dissolution of the nuclear envelope in transformed mouse embryonic fibroblasts that do not express torsinA. Nuclear envelope breakdown is accompanied by an eight-fold inhibition of virus replication. Breakdown of the membrane is much more limited during infection with viruses that lack the gB and gH genes, suggesting that breakdown involves factors that promote fusion at the nuclear membrane. Nuclear envelope breakdown is also inhibited during infection with virus that does not express UL34, but is enhanced when the US3 gene is deleted, suggesting that envelope breakdown may be enhanced by nuclear lamina disruption. Nuclear envelope breakdown cannot compensate for deletion of the UL34 gene suggesting that mixing of nuclear and cytoplasmic contents is insufficient to bypass loss of the normal nuclear egress pathway. Copyright © 2014 Elsevier Inc. All rights reserved.

Characteristics of MAO coating obtained on ZK60 Mg alloy under two and three steps voltage-increasing modes in dual electrolyte

Science.gov (United States)

Yang, Jun; Wang, Ze-Xin; Lu, Sheng; Lv, Wei-gang; Jiang, Xi-zhi; Sun, Lei

2017-03-01

The micro-arc oxidation process was conducted on ZK60 Mg alloy under two and three steps voltage-increasing modes by DC pulse electrical source. The effect of each mode on current-time responses during MAO process and the coating characteristic were analysed and discussed systematically. The microstructure, thickness and corrosion resistance of MAO coatings were evaluated by scanning electron microscopy (SEM), energy disperse spectroscopy (EDS), microscope with super-depth of field and electrochemical impedance spectroscopy (EIS). The results indicate that two and three steps voltage-increasing modes can improve weak spark discharges with insufficient breakdown strength in later period during the MAO process. Due to higher value of voltage and voltage increment, the coating with maximum thickness of about 20.20μm formed under two steps voltage-increasing mode shows the best corrosion resistance. In addition, the coating fabricated under three steps voltage-increasing mode shows a smoother coating with better corrosion resistance due to the lower amplitude of voltage-increasing.

Effect of electric field in the characterization of pultruded GFRP boron-free composite insulator for the extra high voltage by the ionizing radiation

Energy Technology Data Exchange (ETDEWEB)

Fujiwara, Hissae; Silva Junior, Edmilson Jose; Shinohara, Armando Hideki [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil); Xavier, Gustavo Jose Vasconcelos [CHESF, Recife, PE (Brazil); Costa, Edson Guedes [Universidade Federal de Campina Grande (UFCG), PB (Brazil); Lott Neto, Henrique Batista Duffles Teixeira; Britto, Paulo Roberto Ranzan; Fontan, Marcio A.B. [Sistema de Transmissao do Nordeste S.A., Recife, PE (Brazil)

2016-07-01

Full text: The pultruded boron-free glass fiber reinforced polymer (GFRP) composite has been widely used material for the electrical insulators in the high, extra and ultra high voltage overhead lines worldwide. In terms of design, the composite insulator has a highly complex geometry and large size. Aging of materials begin as soon as the insulators start their operation due to the strong electric field, mechanical load due to the weight of conductor cables, environment, corona discharge, generation of acids, and as a result, GFRP can fail mechanically by the stress corrosion crack (SCC) and electrical breakdown known as flashover. In order to mitigate the mechanical and electrical failures, the insulators in the field are frequently monitored by visual inspection, infrared thermography, UV detection, variation of measurement of distribution of electric field variation. However, new technologies for characterization and inspection of the composite insulator in the field are required for reliable operation. Imaging characterization using ionizing radiation (X-ray or g-ray) is an interesting technique, however, it can reduce drastically breakdown voltage due to the Townsend discharge, which free electrons are accelerated by an electric field, collide with gas molecules of air, and free additional electrons resulting in an avalanche multiplication that allows an electrical conduction through the air. In this study, in order to evaluate the potential application of ionization radiation for characterization of composite insulator under electric field, testing were conducted in high voltage laboratory by applying voltages up to 640 kV and varying radiation area of the composite insulator. As a result, even though there was an occurrence of flame on Imaging Plate (IP) detector case when it was located near the phase, corona discharge, but no breakdown discharge (flashover) occurred and high quality imaging of radiography could be obtained when X-ray source was employed

The changes of capacitance-loss and current-voltage characteristics of LaMnO3+δ/SrTiO3:Nb heterojunctions exposed to ambient air

International Nuclear Information System (INIS)

Cui Yimin; Wang Rongming

2010-01-01

Effects of moisture absorption on capacitance-loss and current-voltage characteristics of LaMnO 3+δ /SrTiO 3 :Nb heterojunction had been investigated after the heterojunctions were exposed to ambient air. The moisture-absorption-induced increases in loss tangent and breakdown voltage were observed, whereas no changes were found on capacitance and diffusion voltage. These results were discussed by the decrease of oxygen ions in LaMnO 3+δ and the generation of hydroxide ions at grain boundaries. This work will favor both electronic transport analysis and future device applications.

Wind Power Plant Voltage Stability Evaluation: Preprint

Energy Technology Data Exchange (ETDEWEB)

Muljadi, E.; Zhang, Y. C.

2014-09-01

Voltage stability refers to the ability of a power system to maintain steady voltages at all buses in the system after being subjected to a disturbance from a given initial operating condition. Voltage stability depends on a power system's ability to maintain and/or restore equilibrium between load demand and supply. Instability that may result occurs in the form of a progressive fall or rise of voltages of some buses. Possible outcomes of voltage instability are the loss of load in an area or tripped transmission lines and other elements by their protective systems, which may lead to cascading outages. The loss of synchronism of some generators may result from these outages or from operating conditions that violate a synchronous generator's field current limit, or in the case of variable speed wind turbine generator, the current limits of power switches. This paper investigates the impact of wind power plants on power system voltage stability by using synchrophasor measurements.

Breakdown concepts for contingency tables

NARCIS (Netherlands)

Kuhnt, S.

2010-01-01

Loglinear Poisson models are commonly used to analyse contingency tables. So far, robustness of parameter estimators as well as outlier detection have rarely been treated in this context. We start with finite-sample breakdown points. We yield that the breakdown point of mean value estimators

Electron drift velocity in SF{sub 6} in strong electric fields determined from rf breakdown curves

Energy Technology Data Exchange (ETDEWEB)

Lisovskiy, V; Yegorenkov, V [Department of Physics and Technology, Kharkov National University, Svobody sq.4, Kharkov 61077 (Ukraine); Booth, J-P [Laboratoire de Physique des Plasmas, Ecole Polytechnique, Palaiseau 91128 (France); Landry, K [Unaxis Displays Division France SAS, 5, Rue Leon Blum, Palaiseau 91120 (France); Douai, D [Physical Sciences Division, Institute for Magnetic Fusion Research, CEA Centre de Cadarache, F-13108 Saint Paul lez Durance Cedex (France); Cassagne, V, E-mail: lisovskiy@yahoo.co [Developpement Photovoltaique Couches Minces, Total, 2, place Jean Millier, La Defense 6, 92400 Courbevoie (France)

2010-09-29

This paper presents measurements of the electron drift velocity V{sub dr} in SF{sub 6} gas for high reduced electric fields (E/N = 330-5655 Td (1 Td = 10{sup -17} V cm{sup 2})). The drift velocities were obtained using the method of Lisovskiy and Yegorenkov (1998 J. Phys. D: Appl. Phys. 31 3349) based on the determination of the pressure and voltage of the turning points of rf capacitive discharge breakdown curves for a range of electrode spacings. The V{sub dr} values thus obtained were in good agreement with those calculated from the cross-sections of Phelps and Van Brunt (1988 J. Appl. Phys. 64 4269) using the BOLSIG code. The validity of the Lisovskiy-Yegorenkov method is discussed and we show that it is applicable over the entire E/N range where rf discharge ignition at breakdown occurs for rf frequencies of 13.56 MHz or above.

Visibility of changes in light intensity caused by voltage leaps

International Nuclear Information System (INIS)

Seljeseth, Helge; Mogstad, Olve

2006-05-01

Sintef Energy Research was engaged by NVE to evaluate the official requirements on voltage leaps in regulations concerning quality of delivery, and simultaneously conduct tests with a panel of test persons in order to get more detailed evaluations and recommendations to the existing requirements on voltage leaps. Tests and laboratory experiments have been performed on a total of 96 test persons, and the results reveal that voltage leaps even smaller than the 3 percent limit set by Norwegian regulations are visible to most people. The majority of the test persons consider the light conditions as unacceptably bad when light conditions are near the limit of voltage leap. Moreover, 25 percent of the test persons considered the light quality unacceptable when the voltage leap was well under half of the official limit.The results of the experiments indicates a need for narrowing the restrictions on voltage leaps in the Norwegian power network in order to limit the size and frequency of this kind of disturbance in the voltage. Recommendations for regulations are elaborated in chapter 3 (ml)

Humidity effects on wire insulation breakdown strength.

Energy Technology Data Exchange (ETDEWEB)

Appelhans, Leah

2013-08-01

Methods for the testing of the dielectric breakdown strength of insulation on metal wires under variable humidity conditions were developed. Two methods, an ASTM method and the twisted pair method, were compared to determine if the twisted pair method could be used for determination of breakdown strength under variable humidity conditions. It was concluded that, although there were small differences in outcomes between the two testing methods, the non-standard method (twisted pair) would be appropriate to use for further testing of the effects of humidity on breakdown performance. The dielectric breakdown strength of 34G copper wire insulated with double layer Poly-Thermaleze/Polyamide-imide insulation was measured using the twisted pair method under a variety of relative humidity (RH) conditions and exposure times. Humidity at 50% RH and below was not found to affect the dielectric breakdown strength. At 80% RH the dielectric breakdown strength was significantly diminished. No effect for exposure time up to 140 hours was observed at 50 or 80%RH.

Measurement Error Estimation for Capacitive Voltage Transformer by Insulation Parameters

Directory of Open Access Journals (Sweden)

Bin Chen

2017-03-01

Full Text Available Measurement errors of a capacitive voltage transformer (CVT are relevant to its equivalent parameters for which its capacitive divider contributes the most. In daily operation, dielectric aging, moisture, dielectric breakdown, etc., it will exert mixing effects on a capacitive divider’s insulation characteristics, leading to fluctuation in equivalent parameters which result in the measurement error. This paper proposes an equivalent circuit model to represent a CVT which incorporates insulation characteristics of a capacitive divider. After software simulation and laboratory experiments, the relationship between measurement errors and insulation parameters is obtained. It indicates that variation of insulation parameters in a CVT will cause a reasonable measurement error. From field tests and calculation, equivalent capacitance mainly affects magnitude error, while dielectric loss mainly affects phase error. As capacitance changes 0.2%, magnitude error can reach −0.2%. As dielectric loss factor changes 0.2%, phase error can reach 5′. An increase of equivalent capacitance and dielectric loss factor in the high-voltage capacitor will cause a positive real power measurement error. An increase of equivalent capacitance and dielectric loss factor in the low-voltage capacitor will cause a negative real power measurement error.

Multiple helical modes of vortex breakdown

DEFF Research Database (Denmark)

Sørensen, Jens Nørkær; Naumov, I. V.; Okulov, Valery

2011-01-01

Experimental observations of vortex breakdown in a rotating lid-driven cavity are presented. The results show that vortex breakdown for cavities with high aspect ratios is associated with the appearance of stable helical vortex multiplets. By using results from stability theory generalizing Kelvi......’s problem on vortex polygon stability, and systematically exploring the cavity flow, we succeeded in identifying two new stable vortex breakdown states consisting of triple and quadruple helical multiplets....

Work Breakdown Structure (WBS) Handbook

Science.gov (United States)

2010-01-01

The purpose of this document is to provide program/project teams necessary instruction and guidance in the best practices for Work Breakdown Structure (WBS) and WBS dictionary development and use for project implementation and management control. This handbook can be used for all types of NASA projects and work activities including research, development, construction, test and evaluation, and operations. The products of these work efforts may be hardware, software, data, or service elements (alone or in combination). The aim of this document is to assist project teams in the development of effective work breakdown structures that provide a framework of common reference for all project elements. The WBS and WBS dictionary are effective management processes for planning, organizing, and administering NASA programs and projects. The guidance contained in this document is applicable to both in-house, NASA-led effort and contracted effort. It assists management teams from both entities in fulfilling necessary responsibilities for successful accomplishment of project cost, schedule, and technical goals. Benefits resulting from the use of an effective WBS include, but are not limited to: providing a basis for assigned project responsibilities, providing a basis for project schedule development, simplifying a project by dividing the total work scope into manageable units, and providing a common reference for all project communication.

Self-stabilized discharge filament in plane-parallel barrier discharge configuration: formation, breakdown mechanism, and memory effects

Science.gov (United States)

Tschiersch, R.; Nemschokmichal, S.; Bogaczyk, M.; Meichsner, J.

2017-10-01

Single self-stabilized discharge filaments were investigated in the plane-parallel electrode configuration. The barrier discharge was operated inside a gap of 3 mm shielded by glass plates to both electrodes, using helium-nitrogen mixtures and a square-wave feeding voltage at a frequency of 2 kHz. The combined application of electrical measurements, ICCD camera imaging, optical emission spectroscopy and surface charge diagnostics via the electro-optic Pockels effect allowed the correlation of the discharge development in the volume and on the dielectric surfaces. The formation criteria and existence regimes were found by systematic variation of the nitrogen admixture to helium, the total pressure and the feeding voltage amplitude. Single self-stabilized discharge filaments can be operated over a wide parameter range, foremost, by significant reduction of the voltage amplitude after the operation in the microdischarge regime. Here, the outstanding importance of the surface charge memory effect on the long-term stability was pointed out by the recalculated spatio-temporally resolved gap voltage. The optical emission revealed discharge characteristics that are partially reminiscent of both the glow-like barrier discharge and the microdischarge regime, such as a Townsend pre-phase, a fast cathode-directed ionization front during the breakdown and radially propagating surface discharges during the afterglow.

A computational study of the topology of vortex breakdown

Science.gov (United States)

Spall, Robert E.; Gatski, Thomas B.

1991-01-01

A fully three-dimensional numerical simulation of vortex breakdown using the unsteady, incompressible Navier-Stokes equations has been performed. Solutions to four distinct types of breakdown are identified and compared with experimental results. The computed solutions include weak helical, double helix, spiral, and bubble-type breakdowns. The topological structure of the various breakdowns as well as their interrelationship are studied. The data reveal that the asymmetric modes of breakdown may be subject to additional breakdowns as the vortex core evolves in the streamwise direction. The solutions also show that the freestream axial velocity distribution has a significant effect on the position and type of vortex breakdown.

Discharge breakdown in the EXTRAP configuration

International Nuclear Information System (INIS)

Drake, J.R.

1982-02-01

The breakdown of a discharge in a linear EXTRAP configuration has been studied experimentally. In this configuration the breakdown occurs along the zero B-field line, which is the axis of the linear octupole magnetic field, between the anode and cathode which constitute the ends of the linear device. Breakdown could be described by a modified Townsend criterion which included additional electron losses due to the presence of the B-field transverse to the discharge. (author)

Electrode breakdown potentials in MHD plasmas

International Nuclear Information System (INIS)

Sodha, M.S.; Raju, G.V.R.; Kumar, A.S.; Gupta, Bhumesh

1988-01-01

Electrode breakdown potentials and current densities have been calculated for both the thermionically electron emitting and non-emitting cathodes. Calculated values have been compared with the available experimental results. It is found that the cathode potential drop for the breakdown is almost unaffected by the emission. However, both the total potential difference between the anode and the cathode and the current density at the breakdown are higher for electron-emitting cathodes than for non-emitting cathodes. (author)

Formation of ball streamers at a subnanosecond breakdown of gases at a high pressure in a nonuniform electric field

Science.gov (United States)

Beloplotov, D. V.; Tarasenko, V. F.; Sorokin, D. A.; Lomaev, M. I.

2017-11-01

The formation of a diffuse discharge plasma at a subnanosecond breakdown of a "cone-plane" gap filled with air, nitrogen, methane, hydrogen, argon, neon, and helium at various pressures has been studied. Nanosecond negative and positive voltage pulses have been applied to the conical electrode. The experimental data on the dynamics of plasma glow at the stage of formation and propagation of a streamer have been obtained with intensified charge-coupled device and streak cameras. It has been found that the formation of ball streamers is observed in all gases and at both polarities. A supershort avalanche electron beam has been detected behind the flat foil electrode in a wide range of pressures in the case of a negatively charged conical electrode. A mechanism of the formation of streamers at breakdown of various gases at high overvoltages has been discussed.

Optimization of ECR-breakdown and plasma discharge formation on T-10 tokamak, using X-mode second harmonic of ECR.

Directory of Open Access Journals (Sweden)

Roy I.

2012-09-01

Full Text Available In order to obtain breakdown and suitable plasma parameters for low-voltage OH start-up, high level of EC-power was injected into T-10 tokamak. Input HF-power was varied in the range of 0.15–1.0 MW. Two HF-launcher systems with different output beams allowed to inject EC-waves with maximum power density 0.25 MW/cm2 and 0.01 MW/cm2. Dependence of breakdown time delay on HF-power was obtained. It was shown, that optimal plasma parameters were achieved in presence of plasma equilibrium currents I=3 kA (input HF-power=1.0 MW. Electron temperature Te=100÷150 eV and electron density ne=5·1012 cm−3 was measured in these discharges. These parameters remained constant during full HF-pulse-length.

Voltage variation due to solar photovoltaic in distribution network

International Nuclear Information System (INIS)

Azad, H I; Ramachandaramurthy, V K; Maleki, Hesamaldin

2013-01-01

Grid integration of solar photovoltaic (PV) plant offers reduction in greenhouse emissions and independence from fossil fuels for power generation. The integration of such forms of power generation also brings with it a variety of policy and technical issues. One of the technical issues is the variation in grid voltages in the presence of solar photovoltaic (PV) plant, resulting in degradation of power quality. In this paper, the application of a dq current controller to limit the voltage variation at the point of common coupling (PCC) due to a 2 MW solar photovoltaic (PV) plant will be discussed. The controller's goal is to ensure that the voltage variation meets the momentary voltage change limits specified in TNB's Technical Guidebook for the connection of distributed generation. The proposed dq current controller is shown to be able to limit the voltage variation.

Electrothermal and microstructural characterization of varistors ceramics used in high-voltage surge arresters; Caracterizacao eletrotermica e microestrutural de ceramicas varistoras utilizadas em para-raios de altas tensoes

Energy Technology Data Exchange (ETDEWEB)

Barbosa, Flavio Bittencourt; Furtado, Jose G. de Melo [Centro de Pesquisas de Energia Eletrica (CEPEL), Rio de Janeiro, RJ (Brazil); Nobrega, Maria C. de S. [Universidade Federal do Rio de Janeiro (COPPE/UFRJ), RJ (Brazil). Coordenacao dos Programas de Pos-Graduacao de Engenharia

2008-07-01

In this work is studied the electrothermal behavior of varistor ceramic blocks used in high voltage surge arresters of transmission and distribution lines, relating this behavior to microstructural characteristics of the studied varistor ceramics. We studied blocks of zinc oxide varistors with nominal voltage of 4.0 kV, by and voltage-capacitance characterization curves, reference voltage test, impulse residual voltage, polarization tests and induced degradation tests. On the other hand, the microstructural characterization was made by scanning electron microscopy and energy-dispersive spectroscopy. The obtained results allow to correlate the behavior of the resistive component of the leakage current with the microstructural characteristics of the studied varistors, specially in pre-breakdown region. (author)

Maximum permissible voltage of YBCO coated conductors

Energy Technology Data Exchange (ETDEWEB)

Wen, J.; Lin, B.; Sheng, J.; Xu, J.; Jin, Z. [Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai (China); Hong, Z., E-mail: zhiyong.hong@sjtu.edu.cn [Department of Electrical Engineering, Shanghai Jiao Tong University, Shanghai (China); Wang, D.; Zhou, H.; Shen, X.; Shen, C. [Qingpu Power Supply Company, State Grid Shanghai Municipal Electric Power Company, Shanghai (China)

2014-06-15

Highlights: • We examine three kinds of tapes’ maximum permissible voltage. • We examine the relationship between quenching duration and maximum permissible voltage. • Continuous I{sub c} degradations under repetitive quenching where tapes reaching maximum permissible voltage. • The relationship between maximum permissible voltage and resistance, temperature. - Abstract: Superconducting fault current limiter (SFCL) could reduce short circuit currents in electrical power system. One of the most important thing in developing SFCL is to find out the maximum permissible voltage of each limiting element. The maximum permissible voltage is defined as the maximum voltage per unit length at which the YBCO coated conductors (CC) do not suffer from critical current (I{sub c}) degradation or burnout. In this research, the time of quenching process is changed and voltage is raised until the I{sub c} degradation or burnout happens. YBCO coated conductors test in the experiment are from American superconductor (AMSC) and Shanghai Jiao Tong University (SJTU). Along with the quenching duration increasing, the maximum permissible voltage of CC decreases. When quenching duration is 100 ms, the maximum permissible of SJTU CC, 12 mm AMSC CC and 4 mm AMSC CC are 0.72 V/cm, 0.52 V/cm and 1.2 V/cm respectively. Based on the results of samples, the whole length of CCs used in the design of a SFCL can be determined.

Effect of voltage shape of electrical power supply on radiation and density of a cold atmospheric argon plasma jet

Directory of Open Access Journals (Sweden)

F Sohbatzadeh

2017-02-01

Full Text Available In this work, we investigated generating argon cold plasma jet at atmospheric pressure based on dielectric barrier discharge configuration using three electrical power supplies of sinusoidal, pulsed and saw tooth high voltage shapes at 8 KHZ. At first; we describe the electronic circuit features for generating high voltage (HV wave forms including saw tooth, sinusoidal and pulsed forms. Then, we consider the effect of voltage shape on the electrical breakdown. Relative concentrations of chemical reactive species such as Oxygen, atomic Nitrogen and OH were measured using optical emission spectroscopy. Using a simple numerical model, we showed a HV with less rise time increases electron density, therefore a cold plasma jet can be produced with a minimal consumption electrical power

Disintegration of rocks based on magnetically isolated high voltage discharge

Science.gov (United States)

He, Mengbing; Jiang, Jinbo; Huang, Guoliang; Liu, Jun; Li, Chengzu

2013-02-01

Recently, a method utilizing pulsed power technology for disintegration of rocks arouses great interest of many researchers. In this paper, an improved method based on magnetic switch and the results shown that the uniform dielectrics like plastic can be broken down in water is presented, and the feasible mechanism explaining the breakdown of solid is proposed and proved experimentally. A high voltage pulse of 120 kV, rise time 0.2 μs was used to ignite the discharging channel in solids. When the plasma channel is formed in the solid, the resistance of the channel is quiet small; even if a relatively low voltage is applied on the channel on this occasion, it will produce high current to heat the plasma channel rapidly, and eventually disintegrate the solids. The feasibility of promising industrial application in the drilling and demolition of natural and artificial solid materials by the method we presented is verified by the experiment result in the paper.

The Multistability of Technological Breakdowns in Education

DEFF Research Database (Denmark)

Andersen, Bjarke Lindsø; Tafdrup, Oliver Alexander

2017-01-01

Introduction Everyone who is involved with modern technological artefacts such as computers, software and tablets has experienced situations where the artefacts suddenly cease to function properly. This is commonly known as a technological breakdown. Within education and the praxis of teaching...... technological breakdowns become a more and more ubiquitous phenomenon due to the rapid increase of technological artefacts utilized for educational purposes (Riis, 2012). The breakdowns impact the educational practice with consequences ranging from creating small obstacles to rendering it impossible to conduct...... successful teaching. Thus, knowing how to cope with technological breakdowns is a pivotal part of being a technological literate....

Investigations of dc breakdown fields

CERN Document Server

Ramsvik, Trond; Reginelli, Alessandra; Taborelli, Mauro

2006-01-01

The need for high accelerating gradients for the future 30 GHz multi-TeV e+e- Compact Linear Collider (CLIC) at CERN has triggered a comprehensive study of DC breakdown fields of metals in UHV. The study shows that molybdenum (Mo), tungsten (W), titanium (Ti) and TiVAl reach high breakdown fields, and are thus good candidates for the iris material of CLIC structures. A significant decrease in the saturated breakdown field (Esat) is observed for molybdenum and tungsten when exposed to air. Specifically, at air pressures of 10-5 mbar, the decrease in Esat is found to be 50% and 30% for molybdenum and tungsten, respectively. In addition, a 30% decrease is found when molybdenum is conditioned with a CO pressure of ~1-10-5 mbar. Surface analysis measurements and breakdown conditioning in O2 ambience imply that the origin of the decrease in Esat is closely linked to oxide formation on the cathode surface. "Ex-situ" treatments by ion bombardment of molybdenum effectively reduce the oxide layers, and improve the brea...

Cavitation as a Precursor to Breakdown of Mass-Impregnated HVDC Cables

Energy Technology Data Exchange (ETDEWEB)

Evenset, Gunnar

1999-09-01

Thermal cycling has proven to be a critical test for mass-impregnated HVDC cables. The dielectric strength of the insulation is significantly reduced during the first part of the cooling. This decrease of the dielectric strength limits the development of mass-impregnated cables for higher operating voltages and higher power transfer capacities. The decrease of the dielectric strength during cooling has been assumed to be caused by formation of cavities in the mass because the thermal contraction of the mass is larger than that of the paper. Cavities have previously been observed in thermally cycled cables, but their actual formation and growth have not been studied. The fact that breakdown usually occurs a few hours into the cooling period indicates that the dynamics of the growth is important. This work studies the dynamic phenomena occurring in mass-impregnated cables during thermal cycling. In experiments on a system of mass and insulating paper, cavities were observed near the paper surface, probably caused by heterogeneous nucleation. Knowing the tensile stress at cavity formation is important because it controls the size of the cavities and the distance between independently formed cavities in a cable insulation. A test cell was designed to investigate cavitation in models of lapped insulation. The formation, growth and collapse of the cavities could be visually observed while the insulation was electrically stressed and partial discharges were measured. The first cavity generally formed in one of the butt gaps and grew both along the butt gap and into the mass layers between the papers towards adjacent butt gaps. When the cavity between the papers grew into an adjacent butt gap, the gas/vapour filled channel connecting the butt gaps was closed. In this way, one cavity grew into several butt gaps. The extent of cavities between the papers was observed to depend on the interfacial pressure. Considerable less tension is required to suck the menisci of a cavity

Comparison of the Detection Characteristics of Trace Species Using Laser-Induced Breakdown Spectroscopy and Laser Breakdown Time-of-Flight Mass Spectrometry

Directory of Open Access Journals (Sweden)

Zhenzhen Wang

2015-03-01

Full Text Available The rapid and precise element measurement of trace species, such as mercury, iodine, strontium, cesium, etc. is imperative for various applications, especially for industrial needs. The elements mercury and iodine were measured by two detection methods for comparison of the corresponding detection features. A laser beam was focused to induce plasma. Emission and ion signals were detected using laser-induced breakdown spectroscopy (LIBS and laser breakdown time-of-flight mass spectrometry (LB-TOFMS. Multi-photon ionization and electron impact ionization in the plasma generation process can be controlled by the pressure and pulse width. The effect of electron impact ionization on continuum emission, coexisting molecular and atomic emissions became weakened in low pressure condition. When the pressure was less than 1 Pa, the plasma was induced by laser dissociation and multi-photon ionization in LB-TOFMS. According to the experimental results, the detection limits of mercury and iodine in N2 were 3.5 ppb and 60 ppb using low pressure LIBS. The mercury and iodine detection limits using LB-TOFMS were 1.2 ppb and 9.0 ppb, which were enhanced due to different detection features. The detection systems of LIBS and LB-TOFMS can be selected depending on the condition of each application.

Planned waveguide electric field breakdown studies

International Nuclear Information System (INIS)

Wang Faya; Li Zenghai

2012-01-01

This paper presents an experimental setup for X-band rf breakdown studies. The setup is composed of a section of WR90 waveguide with a tapered pin located at the middle of the waveguide E-plane. Another pin is used to rf match the waveguide so it operates in a travelling wave mode. By adjusting the penetration depth of the tapered pin, different surface electric field enhancements can be obtained. The setup will be used to study the rf breakdown rate dependence on power flow in the waveguide for a constant maximum surface electric field on the pin. Two groups of pins have been designed. The Q of one group is different and very low. The other has a similar Q. With the test of the two groups of pins, we should be able to discern how the net power flow and Q affect the breakdown. Furthermore, we will apply an electron beam treatment to the pins to study its effect on breakdown. Overall, these experiments should be very helpful in understanding rf breakdown phenomena and could significantly benefit the design of high gradient accelerator structures.

Experiments concerning the theories of vortex breakdown

Science.gov (United States)

Panton, Ronald L.; Stifle, Kirk E.

1991-01-01

An experimental project was undertaken to investigate the character of vortex breakdown with particular regard to the stagnation and wave guide theories of vortex breakdown. Three different wings were used to produce a trailing vortex which convected downstream without undergoing breakdown. Disturbances were then introduced onto the vortex using a moving wire to 'cut' the vortex. The development of upstream and downstream propagating disturbance waves was observed and the propagation velocities measured. A downstream traveling wave was observed to produce a structure similar in appearance to a vortex breakdown. An upstream traveling wave produced a moving turbulent region. The upstream disturbance moved into an axial velocity profile that had a wake-like defect while the downstream moving vortex breakdown moved against a jet-like overshoot. The longitudinal and swirl velocity profiles were documented by LDV measurement. Wave velocities, swirl angles, and swirl parameters are reported.

Flexible Power Regulation and Current-limited Control of Grid-connected Inverter under Unbalanced Grid Voltage Faults

DEFF Research Database (Denmark)

Guo, Xiaoqiang; Liu, Wenzhao; Lu, Zhigang

2017-01-01

The grid-connected inverters may experience excessive current stress in case of unbalanced grid voltage Fault Ride Through (FRT), which significantly affects the reliability of the power supply system. In order to solve the problem, the inherent mechanisms of the excessive current phenomenon...... with the conventional FRT solutions are discussed. The quantitative analysis of three phase current peak values are conducted and a novel current-limited control strategy is proposed to achieve the flexible active and reactive power regulation and successful FRT in a safe current operation area with the aim...

The Breakdown Mechanisms In Electrical Discharges: The Role Of The Field Emission Effect In Direct Current Discharges In Micro gaps

International Nuclear Information System (INIS)

Radmilovic-Radjenovic, M.; Radjenovic, B.; Bojarov, A.; Klas, M.; Matejcik, S.

2013-01-01

This review represents an attempt to sum up the current state of the research in the field of breakdown phenomena in electrical discharges. The paper provides facts and theories concerning different classes of direct current, radio and microwave frequency discharges, in vacuum, in the gas and in liquids, without and in the presence of the magnetic fields. The emphasize was made on the field emission effects and on the fundamental aspects of the breakdown phenomena in micro discharges via discussions and analysis of the experimental, theoretical and simulation results. It was found that the Paschen's law is not applicable for the micron gap sizes, when deviations from the standard scaling law become evident and modified Paschen curve should be used. The explanation of the deviations from the Paschen law was attributed to the secondary electron emission enhanced by the strong field generated in micro gaps. The experiments were carried out in order to establish scaling law in micro gaps. The volt-ampere characteristics were also recorded and compared with the theoretical predictions based on the Fowler-Nordheim theory. The importance of the enhancement factor and the space charge on results was also considered. On the basis of the experimental breakdown voltage curves, the effective yields in micro gaps have been estimated for different gases which can be served as input data in modeling. The effective yields allow analytically produce modified Paschen curves that predicts the deviations from the Paschen law observed in the experiments. In addition, we present results of computer simulations using a Particle-in-cell/Monte Carlo Collisions (PIC/MCC) code with the secondary emission model in order to include the field emission enhanced secondary electron production in micro gaps. The agreement between simulation and experimental results suggest that computer simulations can be used to improve understanding of the plasma physics as an alternative to analytical

The Development of Breakdown in Transformer Oil

Directory of Open Access Journals (Sweden)

Jozef Kudelcik

2007-01-01

Full Text Available The conditions under which breakdown of composite liquid - solid insulation can be occurred, e.g. in transformer, play an important role in designing of such insulation. The initial state of breakdown development is explained based on development of streamers in cavitations. The whole breakdown development in transformer oil is represented by RLC circuit and it depends on the parameters of outer circuit.

The physics of ''vacuum'' breakdown

International Nuclear Information System (INIS)

Schwirzke, F.

1993-01-01

Many discharges form small cathode spots which provide such a high energy density that the cathode material explodes into a dense plasma cloud within a very short time. Despite the fundamental importance of cathode spots for the breakdown process and the formation of a discharge, the structure of the cathode spot plasma and the source of the high energy density were not yet well defined. One model, the whisker explosive emission model, assumes that joule heating by field emitted electrons provides the energy. Current densities of j FE = 10 12 - 10 13 A/m 2 would be required. However, the pre-breakdown j FE is self-limiting. The negative space charge caused by j FE in the cathode-anode gap reduces the effective electric field E on the cathode surface. The maximum current density j CL is space charge limited by Child-Langmuir's law. The field emitting spot cannot deliver j CL without turning itself off, since the negative space charge caused by j CL reduces E congruent 0 at the cathode surface. Hence, it must be that the vacuum j FE CL . The development of a current with j > j FE (vacuum) requires that ions exist in front of the electron emitting spot. Ions cannot be emitted from the surface of the field emitting spot, the enhanced electric field would hold them back. The initial ionization must occur in the cathode-anode gap near the electron emitting spot. Ionization of desorbed neutrals provides the mechanism. This ionization process requires considerably less current than the ionization of solid material by joule heating. Field emission and the impact of ions stimulate desorption of weakly bound adsorbates from the surface of the electron emitting spot. The cross section for ionization of the neutrals has a maximum for ∼ 100 eV electrons

Fast turn-off of high voltage 4H–SiC npn BJTs from the saturation on-state regime

International Nuclear Information System (INIS)

Ivanov, P A; Levinshtein, M E; Palmour, J W; Agarwal, A K; Zhang, J

2010-01-01

Fast turn-off of high-voltage (breakdown voltage ≥ 3 kV) 4H–SiC npn bipolar junction transistors driven in a deeply saturated regime has been reported. In the conventional turn-off mode (base current break), the turn-off delay and current fall times are 80 ns and 100 ns, respectively. It is shown that these times can be made as short as 20 and 4 ns, respectively, if a reverse base current pulse of appropriate amplitude is applied to sweep out minority carriers from the base. The experimental values of delay and turn-off times well coincide with those calculated in terms of the charge control model

Voltage-dependent gating of hERG potassium channels

Directory of Open Access Journals (Sweden)

Yen May eCheng

2012-05-01

Full Text Available The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4-S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-a-go-go related gene, hERG, which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure-function relationships underlying voltage-dependent gating in Shaker and hERG channels, with a focus on the roles of the voltage sensing domain and the S4-S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter charge interactions. More recent data suggest that key amino acid differences in the hERG voltage sensing unit and S4-S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor.

A high voltage SOI pLDMOS with a partial interface equipotential floating buried layer

International Nuclear Information System (INIS)

Wu Lijuan; Zhang Wentong; Zhang Bo; Li Zhaoji

2013-01-01

A novel silicon-on-insulator (SOI) high-voltage pLDMOS is presented with a partial interface equipotential floating buried layer (FBL) and its analytical model is analyzed in this paper. The surface heavily doped p-top layers, interface floating buried N + /P + layers, and three-step field plates are designed carefully in the FBL SOI pLDMOS to optimize the electric field distribution of the drift region and reduce the specific resistance. On the condition of ESIMOX (epoxy separated by implanted oxygen), it has been shown that the breakdown voltage of the FBL SOI pLDMOS is increased from −232 V of the conventional SOI to −425 V and the specific resistance R on,sp is reduced from 0.88 to 0.2424 Ω·cm 2 . (semiconductor devices)

Novel high-voltage power lateral MOSFET with adaptive buried electrodes

International Nuclear Information System (INIS)

Zhang Wen-Tong; Wu Li-Juan; Qiao Ming; Luo Xiao-Rong; Zhang Bo; Li Zhao-Ji

2012-01-01

A new high-voltage and low-specific on-resistance (R on,sp ) adaptive buried electrode (ABE) silicon-on-insulator (SOI) power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide (BOX) layer, the negative drain voltage V d is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than the electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field E I and the breakdown voltage (BV) of ABE SOI are 545 V/μm and −587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low R on,sp is obtained. Furthermore, the structure also alleviates the self-heating effect (SHE). The analytical model matches the simulation results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

A Novel Index for Online Voltage Stability Assessment Based on Correlation Characteristic of Voltage Profiles

Directory of Open Access Journals (Sweden)

M. R. Aghamohammadi

2011-06-01

Full Text Available Abstract: Voltage instability is a major threat for security of power systems. Preserving voltage security margin at a certain limit is a vital requirement for today’s power systems. Assessment of voltage security margin is a challenging task demanding sophisticated indices. In this paper, for the purpose of on line voltage security assessment a new index based on the correlation characteristic of network voltage profile is proposed. Voltage profile comprising all bus voltages contains the effect of network structure, load-generation patterns and reactive power compensation on the system behaviour and voltage security margin. Therefore, the proposed index is capable to clearly reveal the effect of system characteristics and events on the voltage security margin. The most attractive feature for this index is its fast and easy calculation from synchronously measured voltage profile without any need to system modelling and simulation and without any dependency on network size. At any instant of system operation by merely measuring network voltage profile and no further simulation calculation this index could be evaluated with respect to a specific reference profile. The results show that the behaviour of this index with respect to the change in system security is independent of the selected reference profile. The simplicity and easy calculation make this index very suitable for on line application. The proposed approach has been demonstrated on IEEE 39 bus test system with promising results showing its effectiveness and applicability.

Voltage-Dependent Gating of hERG Potassium Channels

Science.gov (United States)

Cheng, Yen May; Claydon, Tom W.

2012-01-01

The mechanisms by which voltage-gated channels sense changes in membrane voltage and energetically couple this with opening of the ion conducting pore has been the source of significant interest. In voltage-gated potassium (Kv) channels, much of our knowledge in this area comes from Shaker-type channels, for which voltage-dependent gating is quite rapid. In these channels, activation and deactivation are associated with rapid reconfiguration of the voltage-sensing domain unit that is electromechanically coupled, via the S4–S5 linker helix, to the rate-limiting opening of an intracellular pore gate. However, fast voltage-dependent gating kinetics are not typical of all Kv channels, such as Kv11.1 (human ether-à-go-go related gene, hERG), which activates and deactivates very slowly. Compared to Shaker channels, our understanding of the mechanisms underlying slow hERG gating is much poorer. Here, we present a comparative review of the structure–function relationships underlying activation and deactivation gating in Shaker and hERG channels, with a focus on the roles of the voltage-sensing domain and the S4–S5 linker that couples voltage sensor movements to the pore. Measurements of gating current kinetics and fluorimetric analysis of voltage sensor movement are consistent with models suggesting that the hERG activation pathway contains a voltage independent step, which limits voltage sensor transitions. Constraints upon hERG voltage sensor movement may result from loose packing of the S4 helices and additional intra-voltage sensor counter-charge interactions. More recent data suggest that key amino acid differences in the hERG voltage-sensing unit and S4–S5 linker, relative to fast activating Shaker-type Kv channels, may also contribute to the increased stability of the resting state of the voltage sensor. PMID:22586397

Reliability criteria for voltage stability

Energy Technology Data Exchange (ETDEWEB)

Taylor, Carson W; Silverstein, Brian L [Bonneville Power Administration, Portland, OR (United States)

1994-12-31

In face of costs pressures, there is need to allocate scare resources more effectively in order to achieve voltage stability. This naturally leads to development of probabilistic criteria and notions of rick management. In this paper it is presented a discussion about criteria for long term voltage stability limited to the case in which the time frames are topically several minutes. (author) 14 refs., 1 fig.

HF-voltage testing of accelerating system functional model

International Nuclear Information System (INIS)

Gladkov, A.V.; Stepanov, V.B.

1989-01-01

Owing to ambiguity in interpreting the notion of the electron strength of the operating HF device in an acceleator a technique of measurements and result processing, based on statistical analysis of the data is suggested. Experimental testing on electric strength of structures with HF focusing was carried out using a bench in the form of a cylindrical vacuum container inside which a double H-resonator with HF quadrupole electrodes without surface modulation was installed. The dependences obtained permit to evaluate the bahaviour of the HF device from the viewpoint of electric strength and radiation hazard for the whole range of possible values of voltage on the basis of data on the frequency of breakdowns and radiation situation only in one experimental point. 12 refs.; 8 figs

Pressurized-helium breakdown at very low temperatures

Energy Technology Data Exchange (ETDEWEB)

Metas, R J

1972-06-01

An investigation of the electrical-breakdown behavior of helium at very low temperatures has been carried out to assist the design and development of superconducting power cables. At very high densities, both liquid and gaseous helium showed an enhancement in electric strength when pressurized to a few atmospheres; conditioned values of breakdown fields then varied between 30 and 45 MV/m. Breakdown processes occurring over a wide range of helium densities are discussed. 24 references.

Measuring protein breakdown rate in individual proteins in vivo

DEFF Research Database (Denmark)

Holm, Lars; Kjaer, Michael

2010-01-01

To outline different approaches of how protein breakdown can be quantified and to present a new approach to determine the fractional breakdown rate of individual slow turnover proteins in vivo.......To outline different approaches of how protein breakdown can be quantified and to present a new approach to determine the fractional breakdown rate of individual slow turnover proteins in vivo....

Coordinated Voltage Control of Active Distribution Network

Directory of Open Access Journals (Sweden)

Xie Jiang

2016-01-01

Full Text Available This paper presents a centralized coordinated voltage control method for active distribution network to solve off-limit problem of voltage after incorporation of distributed generation (DG. The proposed method consists of two parts, it coordinated primal-dual interior point method-based voltage regulation schemes of DG reactive powers and capacitors with centralized on-load tap changer (OLTC controlling method which utilizes system’s maximum and minimum voltages, to improve the qualified rate of voltage and reduce the operation numbers of OLTC. The proposed coordination has considered the cost of capacitors. The method is tested using a radial edited IEEE-33 nodes distribution network which is modelled using MATLAB.

Numerical Borehole Breakdown Investigations using XFEM

Science.gov (United States)

Beckhuis, Sven; Leonhart, Dirk; Meschke, Günther

2016-04-01

During pressurization of a wellbore a typical downhole pressure record shows the following regimes: first the applied wellbore pressure balances the reservoir pressure, then after the compressive circumferential hole stresses are overcome, tensile stresses are induced on the inside surface of the hole. When the magnitude of these stresses reach the tensile failure stress of the surrounding rock medium, a fracture is initiated and propagates into the reservoir. [1] In standard theories this pressure, the so called breakdown pressure, is the peak pressure in the down-hole pressure record. However experimental investigations [2] show that the breakdown did not occur even if a fracture was initiated at the borehole wall. Drilling muds had the tendency to seal and stabilize fractures and prevent fracture propagation. Also fracture mechanics analysis of breakdown process in mini-frac or leak off tests [3] show that the breakdown pressure could be either equal or larger than the fracture initiation pressure. In order to gain a deeper understanding of the breakdown process in reservoir rock, numerical investigations using the extended finite element method (XFEM) for hydraulic fracturing of porous materials [4] are discussed. The reservoir rock is assumed to be pre-fractured. During pressurization of the borehole, the injection pressure, the pressure distribution and the position of the highest flux along the fracture for different fracturing fluid viscosities are recorded and the influence of the aforementioned values on the stability of fracture propagation is discussed. [1] YEW, C. H. (1997), "Mechanics of Hydraulic Fracturing", Gulf Publishing Company [2] MORITA, N.; BLACK, A. D.; FUH, G.-F. (1996), "Borehole Breakdown Pressure with Drilling Fluids". International Journal of Rock Mechanics and Mining Sciences 33, pp. 39-51 [3] DETOURNAY, E.; CARBONELL, R. (1996), "Fracture Mechanics Analysis of the Breakdown Process in Minifrac or Leakoff Test", Society of Petroleum

A voltage regulator system with dynamic bandwidth boosting for passive UHF RFID transponders

International Nuclear Information System (INIS)

Shen Jinpeng; Wang Xin'an; Liu Shan; Li Shoucheng; Ruan Zhengkun

2013-01-01

This paper presents a voltage regulator system for passive UHF RFID transponders, which contains a rectifier, a limiter, and a regulator. The rectifier achieves power by rectifying the incoming RF energy. Due to the huge variation of the rectified voltage, a limiter at the rectifier output is used to clamp the rectified voltage. In this paper, the design of a limiter circuit is discussed in detail, which can provide a stable limiting voltage with low sensitivity to temperature variation and process dispersion. The key aspect of the voltage regulator system is the dynamic bandwidth boosting in the regulator. By sensing the excess current that is bypassed in the limiter during periods of excess energy, the bias current as well as the bandwidth of the regulator are increased, the output supply voltage can recover quickly from line transients during the periods of no RF energy to a full blast of RF energy. This voltage regulator system is implemented in a 0.18 μm CMOS process. (semiconductor integrated circuits)

Characteristics of Partial Discharge and Ozone Generation for Twisted-pair of Enameled Wires under High-repetitive Impulse Voltage Application

Science.gov (United States)

Kanazawa, Seiji; Enokizono, Masato; Shibakita, Toshihide; Umehara, Eiji; Toshimitsu, Jun; Ninomiya, Shinji; Taniguchi, Hideki; Abe, Yukari

In recent years, inverter drive machines such as a hybrid vehicle and an electric vehicle are operated under high voltage pulse with high repetition rate. In this case, inverter surge is generated and affected the machine operation. Especially, the enameled wire of a motor is deteriorated due to the partial discharge (PD) and finally breakdown of the wire will occur. In order to investigate a PD on a resistant enameled wire, characteristics of PD in the twisted pair sample under bipolar repetitive impulse voltages are investigated experimentally. The relationship between the applied voltage and discharge current was measured at PD inception and extinction, and we estimated the repetitive PD inception and extinction voltages experimentally. The corresponding optical emission of the discharge was also observed by using an ICCD camera. Furthermore, ozone concentration due to the discharge was measured during the life-time test of the resistant enameled wires from a working environmental point of view.

Gauge theories as theories of spontaneous breakdown

International Nuclear Information System (INIS)

Ivanov, E.A.; Ogievetsky, V.I.

1976-01-01

Any gauge theory is proved to arise from spontaneous breakdown of symmetry under certain infinite parameter group, the corresponding gauge field being the Goldstone field by which this breakdown is accompanied

Breakdown coefficients and scaling properties of rain fields

Directory of Open Access Journals (Sweden)

D. Harris

1998-01-01

Full Text Available The theory of scale similarity and breakdown coefficients is applied here to intermittent rainfall data consisting of time series and spatial rain fields. The probability distributions (pdf of the logarithm of the breakdown coefficients are the principal descriptor used. Rain fields are distinguished as being either multiscaling or multiaffine depending on whether the pdfs of breakdown coefficients are scale similar or scale dependent, respectively. Parameter  estimation techniques are developed which are applicable to both multiscaling and multiaffine fields. The scale parameter (width, σ, of the pdfs of the log-breakdown coefficients is a measure of the intermittency of a field. For multiaffine fields, this scale parameter is found to increase with scale in a power-law fashion consistent with a bounded-cascade picture of rainfall modelling. The resulting power-law exponent, H, is indicative of the smoothness of the field. Some details of breakdown coefficient analysis are addressed and a theoretical link between this analysis and moment scaling analysis is also presented. Breakdown coefficient properties of cascades are also investigated in the context of parameter estimation for modelling purposes.

A High-Voltage SOI CMOS Exciter Chip for a Programmable Fluidic Processor System.

Science.gov (United States)

Current, K W; Yuk, K; McConaghy, C; Gascoyne, P R C; Schwartz, J A; Vykoukal, J V; Andrews, C

2007-06-01

A high-voltage (HV) integrated circuit has been demonstrated to transport fluidic droplet samples on programmable paths across the array of driving electrodes on its hydrophobically coated surface. This exciter chip is the engine for dielectrophoresis (DEP)-based micro-fluidic lab-on-a-chip systems, creating field excitations that inject and move fluidic droplets onto and about the manipulation surface. The architecture of this chip is expandable to arrays of N X N identical HV electrode driver circuits and electrodes. The exciter chip is programmable in several senses. The routes of multiple droplets may be set arbitrarily within the bounds of the electrode array. The electrode excitation waveform voltage amplitude, phase, and frequency may be adjusted based on the system configuration and the signal required to manipulate a particular fluid droplet composition. The voltage amplitude of the electrode excitation waveform can be set from the minimum logic level up to the maximum limit of the breakdown voltage of the fabrication technology. The frequency of the electrode excitation waveform can also be set independently of its voltage, up to a maximum depending upon the type of droplets that must be driven. The exciter chip can be coated and its oxide surface used as the droplet manipulation surface or it can be used with a top-mounted, enclosed fluidic chamber consisting of a variety of materials. The HV capability of the exciter chip allows the generated DEP forces to penetrate into the enclosed chamber region and an adjustable voltage amplitude can accommodate a variety of chamber floor thicknesses. This demonstration exciter chip has a 32 x 32 array of nominally 100 V electrode drivers that are individually programmable at each time point in the procedure to either of two phases: 0deg and 180deg with respect to the reference clock. For this demonstration chip, while operating the electrodes with a 100-V peak-to-peak periodic waveform, the maximum HV electrode

Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

Science.gov (United States)

Ma, Pengfei; Du, Lulu; Wang, Yiming; Jiang, Ran; Xin, Qian; Li, Yuxiang; Song, Aimin

2018-01-01

An ultrathin, 5 nm, Al2O3 film grown by atomic-layer deposition was used as a gate dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The Al2O3 layer showed a low surface roughness of 0.15 nm, a low leakage current, and a high breakdown voltage of 6 V. In particular, a very high gate capacitance of 720 nF/cm2 was achieved, making it possible for the a-IGZO TFTs to not only operate at a low voltage of 1 V but also exhibit desirable properties including a low threshold voltage of 0.3 V, a small subthreshold swing of 100 mV/decade, and a high on/off current ratio of 1.2 × 107. Furthermore, even under an ultralow operation voltage of 0.6 V, well-behaved transistor characteristics were still observed with an on/off ratio as high as 3 × 106. The electron transport through the Al2O3 layer has also been analyzed, indicating the Fowler-Nordheim tunneling mechanism.

Breakdown of the Siegert theorem and the many-body charge density operators

International Nuclear Information System (INIS)

Hyuga, H.; Ohtsubo, H.

1978-01-01

The exchange charge density operator is studied in the two-boson exchange model with consistent treatment of the exchange current and nuclear wave functions. A non-vanishing exchange charge density operator even in the static limit, which leads to the breakdown of the Siegert theorem, is found. (Auth.)

Real-time monitoring of airborne beryllium, at OSHA limit levels, by time-resolved laser-induced breakdown spectroscopy

International Nuclear Information System (INIS)

Radziemski, L.J.; Loree, T.R.; Cremers, D.A.

1982-01-01

Real-time detection of beryllium particulate is being investigated by the new technique of laser-induced breakdown spectroscopy. For beryllium detection we monitor the 313.1-nm feature of once ionized beryllium (Be II). Numerous publications describe the technique, our beryllium results, and other applications. Here we summarize the important points and describe our experiments with beryllium

Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

Energy Technology Data Exchange (ETDEWEB)

Venkattraman, Ayyaswamy [Department of Applied Mechanics, Indian Institute of Technology Madras, Chennai 600036 (India)

2013-11-15

The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission.

Cathode fall model and current-voltage characteristics of field emission driven direct current microplasmas

International Nuclear Information System (INIS)

Venkattraman, Ayyaswamy

2013-01-01

The post-breakdown characteristics of field emission driven microplasma are studied theoretically and numerically. A cathode fall model assuming a linearly varying electric field is used to obtain equations governing the operation of steady state field emission driven microplasmas. The results obtained from the model by solving these equations are compared with particle-in-cell with Monte Carlo collisions simulation results for parameters including the plasma potential, cathode fall thickness, ion number density in the cathode fall, and current density vs voltage curves. The model shows good overall agreement with the simulations but results in slightly overpredicted values for the plasma potential and the cathode fall thickness attributed to the assumed electric field profile. The current density vs voltage curves obtained show an arc region characterized by negative slope as well as an abnormal glow discharge characterized by a positive slope in gaps as small as 10 μm operating at atmospheric pressure. The model also retrieves the traditional macroscale current vs voltage theory in the absence of field emission

Performance limiting effects in X-band accelerators

Directory of Open Access Journals (Sweden)

Faya Wang

2011-01-01

Full Text Available Acceleration gradient is a critical parameter for the design of future TeV-scale linear colliders. The major obstacle to higher gradient in room-temperature accelerators is rf breakdown, which is still a very mysterious phenomenon that depends on the geometry and material of the accelerator as well as the input power and operating frequency. Pulsed heating has been associated with breakdown for many years; however, there have been no experiments that clearly separate field and heating effects on the breakdown rate. Recently, such experiments have been performed at SLAC with both standing-wave and traveling-wave structures. These experiments have demonstrated that pulsed heating is limiting the gradient. Nevertheless the X-band structures breakdown studies show damage to the iris surfaces in locations of high electric field rather than of high magnetic field after thousands of breakdowns. It is not yet clear how the relative roles of electric field, magnetic field, and heating factor into the damage caused by rf breakdown. Thus, a dual-moded cavity has been designed to better study the electric field, magnetic field, and pulsed heating effects on breakdown damage.

A computational study of the taxonomy of vortex breakdown

Science.gov (United States)

Spall, Robert E.; Gatski, Thomas B.

1990-01-01

The results of a fully three-dimensional numerical simulation of vortex breakdown using the unsteady, incompressible Navier-Stokes equations are presented. The solutions show that the freestream axial velocity distribution has a significant effect on the position and type of vortex breakdown. Common features between bubble-type and spiral-type breakdown are identified and the role of flow stagnation and the critical state are discussed as complimentary ideas describing the initiation of breakdown.

Materials and Breakdown Phenomena: Heterogeneous Molybdenum Metallic Films

Directory of Open Access Journals (Sweden)

Augusto Marcelli

2017-05-01

Full Text Available Technological activities to design, manufacture, and test new accelerating devices using different materials and methods is under way all over the world. The main goal of these studies is to increase the accelerating gradients and reduce the probability of radio-frequency (RF breakdown. Indeed, it is still not clear why, by increasing the intensity of the applied field, intense surface damage is observed in copper structures, limiting the lifetime and, therefore, the practical applications. A possible solution is represented by a coating of a relatively thick layer of molybdenum in order to improve the breakdown rate. molybdenum can be reliably grown on different substrates with a negligible strain and, for thicknesses up to 600 nm, with a resistivity < 100–150·μΩ cm. Moreover, Mo coatings with controlled composition, internal stress, and roughness may allow improving thermo-mechanical properties reaching values not attainable by uncoated copper. Although the Mo conductivity remains lower compared to Cu, a Mo coating represents a very interesting option for high gradient accelerator components manufactured in copper.

Voltage stability, bifurcation parameters and continuation methods

Energy Technology Data Exchange (ETDEWEB)

Alvarado, F L [Wisconsin Univ., Madison, WI (United States)

1994-12-31

This paper considers the importance of the choice of bifurcation parameter in the determination of the voltage stability limit and the maximum power load ability of a system. When the bifurcation parameter is power demand, the two limits are equivalent. However, when other types of load models and bifurcation parameters are considered, the two concepts differ. The continuation method is considered as a method for determination of voltage stability margins. Three variants of the continuation method are described: the continuation parameter is the bifurcation parameter the continuation parameter is initially the bifurcation parameter, but is free to change, and the continuation parameter is a new `arc length` parameter. Implementations of voltage stability software using continuation methods are described. (author) 23 refs., 9 figs.

Enhanced current and voltage regulators for stand-alone applications

DEFF Research Database (Denmark)

Federico, de Bosio; Pastorelli, Michele; Antonio DeSouza Ribeiro, Luiz

2016-01-01

State feedback decoupling permits to achieve a better dynamic response for Voltage Source in stand-alone applications. The design of current and voltage regulators is performed in the discrete-time domain since it provides better accuracy and allows direct pole placement. As the attainable...... bandwidth of the current loop is mainly limited by computational and PWM delays, a lead compensator structure is proposed to overcome this limitation. The design of the voltage regulator is based on the Nyquist criterion, verifying to guarantee a high sensitivity peak. Discrete-time domain implementation...

Rotor aerodynamic power limits at low tip speed ratio using CFD

International Nuclear Information System (INIS)

Mikkelsen, Robert F; Sarmast, Sasan; Henningson, Dan; Sørensen, Jens N

2014-01-01

When investigating limits of rotor aerodynamic models, the Betz limit serves as a solid marker of an upper limit which no model should be able to exceed. A century ago Joukowsky (1912) proposed a rotor aerodynamic model utilizing a rotating actuator disc with a constant circulation. This model has since then been the subject of much controversy as it predicts a power performance that for all tip speed ratios exceeds the Betz limit and which goes to infinity when the tip speed ratio goes to zero. Recently, it was demonstrated that the Joukowsky model is fully consistent with the inviscid Euler equations and that the apparent inconsistency partly can be explained by the lack of viscous effects (Sprensen and van Kuik [4]). However, even including a term to account for the effect of viscosity at small tip speed ratios, the model still predicts a power yield that exceeds the Betz limit. In the present work we study in detail, using a CFD actuator line model, the flow behavior for rotors at small tip speed ratios. It is shown that the excessive swirl appearing towards the rotor center at small tip speed ratios generates vortex breakdown, causing a recirculating zone in the wake that limits the power yield of the rotor. The appearance of vortex breakdown has a similar effect on the flow behavior as the vortex ring state that usually appears at higher tip speed ratios. Limits to where vortex breakdown might occur with tip speed ratio and rotor loading as parameter are investigated and presented in the paper. The limits found correspond to well-known criterion for vortex breakdown onset for swirling flows in general. By applying a criterion for vortex breakdown in combination with the general momentum theory, the power performance always stays below the Betz limit

Congestion management considering voltage security of power systems

International Nuclear Information System (INIS)

Esmaili, Masoud; Shayanfar, Heidar Ali; Amjady, Nima

2009-01-01

Congestion in a power network is turned up due to system operating limits. To relieve congestion in a deregulated power market, the system operator pays to market participants, GENCOs and DISCOs, to alter their active powers considering their bids. After performing congestion management, the network may be operated with a low security level because of hitting some flows their upper limit and some voltages their lower limit. In this paper, a novel congestion management method based on the voltage stability margin sensitivities is introduced. Using the proposed method, the system operator so alleviates the congestion that the network can more retain its security. The proposed method not only makes the system more secure after congestion management than other methods already presented for this purpose but also its cost of providing security is lower than the earlier methods. Test results of the proposed method along with the earlier ones on the New-England test system elaborate the efficiency of the proposed method from the viewpoint of providing a better voltage stability margin and voltage profile as well as a lower security cost. (author)

Obstacle-induced spiral vortex breakdown

OpenAIRE

Pasche, Simon; Gallaire, François; Dreyer, Matthieu; Farhat, Mohamed

2014-01-01

An experimental investigation on vortex breakdown dynamics is performed. An adverse pressure gradient is created along the axis of a wing-tip vortex by introducing a sphere downstream of an elliptical hydrofoil. The instrumentation involves high-speed visualizations with air bubbles used as tracers and 2D Laser Doppler Velocimeter (LDV). Two key parameters are identified and varied to control the onset of vortex breakdown: the swirl number, defined as the maximum azimuthal velocity divided by...

Vortex breakdown incipience: Theoretical considerations

Science.gov (United States)

Berger, Stanley A.; Erlebacher, Gordon

1992-01-01

The sensitivity of the onset and the location of vortex breakdowns in concentrated vortex cores, and the pronounced tendency of the breakdowns to migrate upstream have been characteristic observations of experimental investigations; they have also been features of numerical simulations and led to questions about the validity of these simulations. This behavior seems to be inconsistent with the strong time-like axial evolution of the flow, as expressed explicitly, for example, by the quasi-cylindrical approximate equations for this flow. An order-of-magnitude analysis of the equations of motion near breakdown leads to a modified set of governing equations, analysis of which demonstrates that the interplay between radial inertial, pressure, and viscous forces gives an elliptic character to these concentrated swirling flows. Analytical, asymptotic, and numerical solutions of a simplified non-linear equation are presented; these qualitatively exhibit the features of vortex onset and location noted above.

Experimental Study of the Effect of Beam Loading on RF Breakdown Rate in CLIC High-Gradient Accelerating Structures

CERN Document Server

Tecker, F; Kelisani, M; Doebert, S; Grudiev, A; Quirante, J; Riddone, G; Syratchev, I; Wuensch, W; Kononenko, O; Solodko, A; Lebet, S

2013-01-01

RF breakdown is a key issue for the multi-TeV highluminosity e+e- Compact Linear Collider (CLIC). Breakdowns in the high-gradient accelerator structures can deflect the beam and decrease the desired luminosity. The limitations of the accelerating structures due to breakdowns have been studied so far without a beam present in the structure. The presence of the beam modifies the distribution of the electrical and magnetic field distributions, which determine the breakdown rate. Therefore an experiment has been designed for high power testing a CLIC prototype accelerating structure with a beam present in the CLIC Test Facility (CTF3). A special beam line allows extracting a beam with nominal CLIC beam current and duration from the CTF3 linac. The paper describes the beam optics design for this experimental beam line and the commissioning of the experiment with beam.

Voltage stability analysis using a modified continuation load flow ...

African Journals Online (AJOL)

This paper addresses the rising problem of identifying the voltage stability limits of load buses in a power system and how to optimally place capacitor banks for voltage stability improvement. This paper uses the concept of the continuation power flow analysis used in voltage stability analysis. It uses the modified ...

48 CFR 252.236-7000 - Modification proposals-price breakdown.

Science.gov (United States)

2010-10-01

...-price breakdown. 252.236-7000 Section 252.236-7000 Federal Acquisition Regulations System DEFENSE... CLAUSES Text of Provisions And Clauses 252.236-7000 Modification proposals—price breakdown. As prescribed in 236.570(a), use the following clause: Modification Proposals—Price Breakdown (DEC 1991) (a) The...

Fundamental studies of passivity and passivity breakdown

International Nuclear Information System (INIS)

Macdonald, D.D.; Urquidi-Macdonald, M.; Song, H.; Biaggio-Rocha, S.; Searson, P.

1991-11-01

This report summarizes the findings of our fundamental research program on passivity and passivity breakdown. During the past three and one half years in this program (including the three year incrementally-funded grant prior to the present grant), we developed and experimentally tested various physical models for the growth and breakdown of passive films on metal surfaces. These models belong to a general class termed ''point defects models'' (PDMs), in which the growth and breakdown of passive films are described in terms of the movement of anion and cation vacancies

Formation of 1.4 MeV runaway electron flows in air using a solid-state generator with 10 MV/ns voltage rise rate

Science.gov (United States)

Mesyats, G. A.; Pedos, M. S.; Rukin, S. N.; Rostov, V. V.; Romanchenko, I. V.; Sadykova, A. G.; Sharypov, K. A.; Shpak, V. G.; Shunailov, S. A.; Ul'masculov, M. R.; Yalandin, M. I.

2018-04-01

Fulfillment of the condition that the voltage rise time across an air gap is comparable with the time of electron acceleration from a cathode to an anode allows a flow of runaway electrons (REs) to be formed with relativistic energies approaching that determined by the amplitude of the voltage pulse. In the experiment described here, an RE energy of 1.4 MeV was observed by applying a negative travelling voltage pulse of 860-kV with a maximum rise rate of 10 MV/ns and a rise time of 100-ps. The voltage pulse amplitude was doubled at the cathode of the 2-cm-long air gap due to the delay of conventional pulsed breakdown. The above-mentioned record-breaking voltage pulse of ˜120 ps duration with a peak power of 15 GW was produced by an all-solid-state pulsed power source utilising pulse compression/sharpening in a multistage gyromagnetic nonlinear transmission line.

Electrical breakdown of water in microgaps

International Nuclear Information System (INIS)

Schoenbach, Karl; Kolb, Juergen; Xiao Shu; Katsuki, Sunao; Minamitani, Yasushi; Joshi, Ravindra

2008-01-01

Experimental and modeling studies on electrical breakdown in water in submillimeter gaps between pin and plane electrodes have been performed. Prebreakdown, breakdown and recovery of the water gaps were studied experimentally by using optical and electrical diagnostics with a temporal resolution on the order of one nanosecond. By using Mach-Zehnder interferometry, the electric field distribution in the prebreakdown phase was determined by means of the Kerr effect. Electric fields values in excess of the computed electric fields, which reach >4 MV cm -1 for applied electrical pulses of 20 ns duration, were recorded at the tip of the pin electrode, an effect which can be explained by a reduced permittivity of water at high electric fields. Breakdown of the gaps, streamer-to-arc transition, was recorded by means of high-speed electrical diagnostics, and through high-speed photography. It was shown, through simulations, that breakdown is initiated by field emission at the interface of preexisting microbubbles. Impact ionization within the micro-bubble's gas then contributes to plasma development. Experiments using pulse-probe methods and Schlieren diagnostics allowed us to follow the development of the disturbance caused by the breakdown over a time of more than milliseconds and to determine the recovery time of a water switch. In order to trigger water switches a trigger electrode with a triple point has been utilized. The results of this research have found application in the construction of compact pulse power generators for bioelectric applications.

High voltage interactions of a sounding rocket with the ambient and system-generated environments

International Nuclear Information System (INIS)

Kuharski, R.A.; Jongeward, G.A.; Wilcox, K.G.; Rankin, T.V.; Roche, J.C.

1990-01-01

The high-power space systems will interact with their environment far more severely than the low-voltage, low-power space systems flown to date. As a minimum, these interactions will include ionization and bulk breakdown, plasma-induced surface flashover, oxygen erosion, meteor and debris damage, and radiation effects. The SPEAR program is addressing some of these issues through the development and testing of high-powered systems for the space environment. SPEAR III, the latest in the SPEAR program, is scheduled to fly in early 1991. It will test high-voltage designs in both ambient and system-generated environments. Two of the key questions that the experiment hopes to address are whether or not the Earth's magnetic field can cause the current that a high-voltage object draws from the plasma to be far less then the current that would be drawn in the absence of the magnetic field and under what neutral environment conditions a discharge from the high-voltage object to the plasma will occur. In this paper, the authors use EPSAT (the environment power system analysis tool) to baseline the design of SPEAR III. The authors' calculations indicate that the experiment will produce the conditions necessary to address these questions

Optical breakdown threshold investigation of 1064 nm laser induced air plasmas

International Nuclear Information System (INIS)

Thiyagarajan, Magesh; Thompson, Shane

2012-01-01

We present the theoretical and experimental measurements and analysis of the optical breakdown threshold for dry air by 1064 nm infrared laser radiation and the significance of the multiphoton and collisional cascade ionization process on the breakdown threshold measurements over pressures range from 10 to 2000 Torr. Theoretical estimates of the breakdown threshold laser intensities and electric fields are obtained using two distinct theories namely multiphoton and collisional cascade ionization theories. The theoretical estimates are validated by experimental measurements and analysis of laser induced breakdown processes in dry air at a wavelength of 1064 nm by focusing 450 mJ max, 6 ns, 75 MW max high-power 1064 nm IR laser radiation onto a 20 μm radius spot size that produces laser intensities up to 3 - 6 TW/cm 2 , sufficient for air ionization over the pressures of interest ranging from 10 to 2000 Torr. Analysis of the measured breakdown threshold laser intensities and electric fields are carried out in relation with classical and quantum theoretical ionization processes, operating pressures. Comparative analysis of the laser air breakdown results at 1064 nm with corresponding results of a shorter laser wavelength (193 nm) [M. Thiyagarajan and J. E. Scharer, IEEE Trans. Plasma Sci. 36, 2512 (2008)] and a longer microwave wavelength (10 8 nm) [A. D. MacDonald, Microwave Breakdown in Gases (Wiley, New York, 1966)]. A universal scaling analysis of the breakdown threshold measurements provided a direct comparison of breakdown threshold values over a wide range of frequencies ranging from microwave to ultraviolet frequencies. Comparison of 1064 nm laser induced effective field intensities for air breakdown measurements with data calculated based on the collisional cascade and multiphoton breakdown theories is used successfully to determine the scaled collisional microwave portion. The measured breakdown threshold of 1064 nm laser intensities are then scaled to

Notes on the voltage performance of accelerator tube sub-modules for the NSF tandem

International Nuclear Information System (INIS)

Eastham, D.A.; Groome, A.E.; Powell, P.

1978-01-01

Measurements are reported of the d.c. voltage performance of vacuum accelerator tube sub-modules for the Nuclear Structure Facility 30 MV Tandem at Daresbury. Using diagnostic techniques it has been possible to separate out the different processes in the tube which can lead to breakdown. As a result, improved sub-modules have been produced. Tests, have simulated the ion exchange processes which occur in longer tube lengths, and a better understanding has been obtained of the way in which these processes depend on the tube geometry and cleanliness. (U.K.)

Voltage scheduling for low power/energy

Science.gov (United States)

Manzak, Ali

2001-07-01

Power considerations have become an increasingly dominant factor in the design of both portable and desk-top systems. An effective way to reduce power consumption is to lower the supply voltage since voltage is quadratically related to power. This dissertation considers the problem of lowering the supply voltage at (i) the system level and at (ii) the behavioral level. At the system level, the voltage of the variable voltage processor is dynamically changed with the work load. Processors with limited sized buffers as well as those with very large buffers are considered. Given the task arrival times, deadline times, execution times, periods and switching activities, task scheduling algorithms that minimize energy or peak power are developed for the processors equipped with very large buffers. A relation between the operating voltages of the tasks for minimum energy/power is determined using the Lagrange multiplier method, and an iterative algorithm that utilizes this relation is developed. Experimental results show that the voltage assignment obtained by the proposed algorithm is very close (0.1% error) to that of the optimal energy assignment and the optimal peak power (1% error) assignment. Next, on-line and off-fine minimum energy task scheduling algorithms are developed for processors with limited sized buffers. These algorithms have polynomial time complexity and present optimal (off-line) and close-to-optimal (on-line) solutions. A procedure to calculate the minimum buffer size given information about the size of the task (maximum, minimum), execution time (best case, worst case) and deadlines is also presented. At the behavioral level, resources operating at multiple voltages are used to minimize power while maintaining the throughput. Such a scheme has the advantage of allowing modules on the critical paths to be assigned to the highest voltage levels (thus meeting the required timing constraints) while allowing modules on non-critical paths to be assigned

Insulation design of cryogenic bushing for superconducting electric power applications

Energy Technology Data Exchange (ETDEWEB)

Koo, J.Y., E-mail: koojy@hanyang.ac.kr [Department of Electronics, Electrical, Control and Instrumentation Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Lee, Y.J.; Shin, W.J.; Kim, Y.H. [Department of Electronics, Electrical, Control and Instrumentation Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Kim, J.T. [Department of Electrical Engineering, Daejin University, Pocheon 487-711 (Korea, Republic of); Lee, B.W. [Department of Electronics, Electrical, Control and Instrumentation Engineering, Hanyang University, Ansan 426-791 (Korea, Republic of); Lee, S.H., E-mail: k720lsh@kins.re.kr [Expert Group Electric and Control Department, Korea Institute of Nuclear Safety, Daejeon 305-600 (Korea, Republic of)

2013-01-15

Highlights: ► In this paper, design factors of cryogenic bushings were discussed and test results of specimen were introduced in detail. ► We focused on the comparative study of breakdown characteristics of different electrode materials. ► Puncture and creepage breakdown characteristics were analyzed based on the withstand voltage. ► We obtained the basic design factors of extra high voltage condenser bushing. ► We obtained the basic design factors of extra high voltage condenser bushing, which could be used in cryogenic environment. -- Abstract: Recently, the superconductivity projects to develop commercial superconducting devices for extra high voltage transmission lines have been undergoing in many countries. One of the critical components to be developed for high voltage superconducting devices, including superconducting transformers, cables, and fault current limiters, is a high voltage bushing, to supply high current to devices without insulating difficulties, that is designed for cryogenic environments. Unfortunately, suitable bushings for HTS equipment were not fully developed for some cryogenic insulation issues. Such high voltage bushings would need to provide electrical insulation capabilities from room temperature to cryogenic temperatures. In this paper, design factors of cryogenic bushings were discussed and test results of specimen were introduced in detail. First, the dielectric strength of three kinds of metals has been measured with uniform and non-uniform electrodes by withstand voltage of impulse and AC breakdown test in LN{sub 2}. Second, puncture breakdown voltage of glass fiber reinforced plastics (GFRPs) plates has been analyzed with non-uniform electrodes. Finally, creepage discharge voltages were measured according to the configuration of non-uniform and uniform electrode on the FRP plate. From the test results, we obtained the basic design factors of extra high voltage condenser bushing, which could be used in cryogenic

AVLIS Production Plant work breakdown structure and Dictionary

International Nuclear Information System (INIS)

1984-01-01

The work breakdown structure has been prepared for the AVLIS Production Plant to define, organize, and identify the work efforts and is summarized in Fig. 1-1 for the top three project levels. The work breakdown structure itself is intended to be the primary organizational tool of the AVLIS Production Plant and is consistent with the overall AVLIS Program Work Breakdown Structure. It is designed to provide a framework for definition and accounting of all of the elements that are required for the eventual design, procurement, and construction of the AVLIS Production Plant. During the present phase of the AVLIS Project, the conceptual engineering phase, the work breakdown structure is intended to be the master structure and project organizer of documents, designs, and cost estimates. As the master project organizer, the key role of the work breakdown structure is to provide the mechanism for developing completeness in AVLIS cost estimates and design development of all hardware and systems. The work breakdown structure provides the framework for tracking, on a one-to-one basis, the component design criteria, systems requirements, design concepts, design drawings, performance projections, and conceptual cost estimates. It also serves as a vehicle for contract reporting. 12 figures, 2 tables

Breakdown Characteristics Study on an 18 Cell X-band Structure

International Nuclear Information System (INIS)

Wang, F

2008-01-01

A CLIC designed 18 cells, low group velocity (2.4% to 1.0% c), X-band (11.4 GHz) accelerator structure (denoted T18) was designed at CERN, its cells were built at KEK, and it was assembled and tested at SLAC. An interesting feature of this structure is that the gradient in the last cell is about 50% higher than that in the first cell. This structure has been RF conditioned at SLAC NLCTA for about 1400 hours where it incurred about 2200 breakdowns. This paper presents the characteristics of these breakdowns, including (1) the breakdown rate dependence on gradient, pulse width and conditioning time, (2) the breakdown distribution along the structure, (3) relation between breakdown and pulsed heating dependence study and (4) electric field decay time for breakdown changing over the whole conditioning time. Overall, this structure performed very well, having a final breakdown rate of less than 1e-6/pulse/m at 106 MV/m with 230 ns pulse width

Breakdown Characteristics Study on an 18 Cell X-band Structure

International Nuclear Information System (INIS)

Wang Faya

2009-01-01

A CLIC designed 18 cells, low group velocity (2.4% to 1.0% c), X-band (11.4 GHz) accelerator structure (denoted T18) was designed at CERN, its cells were built at KEK, and it was assembled and tested at SLAC. An interesting feature of this structure is that the gradient in the last cell is about 50% higher than that in the first cell. This structure has been RF conditioned at SLAC NLCTA for about 1400 hours where it incurred about 2200 breakdowns. This paper presents the characteristics of these breakdowns, including 1) the breakdown rate dependence on gradient, pulse width and conditioning time, 2) the breakdown distribution along the structure, 3) relation between breakdown and pulsed heating dependence study and 4) electric field decay time for breakdown changing over the whole conditioning time. Overall, this structure performed very well, having a final breakdown rate of less than 1e-6/pulse/m at 106 MV/m with 230 ns pulse width.

Tentative type test of a non-invasive high-voltage meter with respect to the quantity of practical peak voltage

International Nuclear Information System (INIS)

Peixoto, J.G.P.; Selbach, H.J.; Kramer, H.M.; Lange, B.

2001-04-01

In Working Group 3 of Sub-committee 62C of the international electrotechnical commission (IEC) a new project is underway [1] with the objective of specifying requirements for the performance characteristics of instruments for the non-invasive measurement of the X-ray tube voltage in diagnostic radiology. In this draft the X-ray tube voltage is specified in terms of the practical peak voltage [2]. The objective of the present work is to perform a tentative type test, based on the ''Requirements for Instruments for Non-invasive Measurements of the X-ray Tube Voltage'' defined in the IEC draft, with a commercially available non-invasive high-voltage meter. The instrument was modified so that the practical peak voltage can be measured. It is shown that the instrument, with the modifications made, is suitable for the non-invasive measurement of the practical peak voltage between 50 kV and 150 kV within the required limits of variation of the response. (orig.)

Analysis on X-band structure breakdown at GLCTA

International Nuclear Information System (INIS)

Suehara, T.; Sanuki, T.; Komamiya, S.; Higo, T.; Hayano, H.; Terunuma, N.; Saeki, T.; Watanabe, K.; Hayakawa, A.; Tsukada, Y.

2004-01-01

We have built a new monitoring system for accelerator structure breakdown in the X-band high-gradient test facility at KEK (GLCTA: Global Linear Collider Test Accelerator). An X-band test structure KX01 (made by KEK) has been processed at GLCTA and we have been collecting data for about 3 months using this breakdown monitoring system. We describe overview of the monitoring system and preliminary result of breakdown analysis of the structure. (author)

Breakdown Cause and Effect Analysis. Case Study

Science.gov (United States)

Biały, Witold; Ružbarský, Juraj

2018-06-01

Every company must ensure that the production process proceeds without interferences. Within this article, the author uses the term "interferences" in reference to unplanned stoppages caused by breakdowns. Unfortunately, usually due to machine operators' mistakes, machines break, which causes stoppages thus generating additional costs for the company. This article shows a cause and effect analysis of a breakdown in a production process. The FMEA as well as quality management tools: the Ishikawa diagram and Pareto chart were used for the analysis. Correction measures were presented which allowed for a significant reduction in the number of stoppages caused by breakdowns.

Silicone elastomers with superior softness and dielectric properties

DEFF Research Database (Denmark)

Yu, Liyun; Madsen, Frederikke Bahrt; Zakaria, Shamsul Bin

Dielectric elastomers (DEs) change their shape and size under a high voltage or reversibly generate a high voltage when deformed. The obstacle of high driving voltages, however, limits the commercial viability of the technology at present. Driving voltage can be lowered by decreasing the Young......’s modulus and increasing the dielectric permittivity of silicone elastomers. One such prominent method of modifying the properties is by adding suitable additives. [1] The major drawbacks for adding solid fillers are agglomeration and increasing stiffness which is often accompanied by the decrease...... were determined by NMR and morphology structures were investigated by optical microscopy. The resulting elastomers were evaluated with respect to their dielectric permittivity, tear and tensile strengths, as well as electrical breakdown.The breakdown strength increased at low amounts of additives...