WorldWideScience

Sample records for voltage biasing requirements

  1. Break Cohesion of Metal Contacts due to Voltage Bias

    Institute of Scientific and Technical Information of China (English)

    LI Yu-Xian

    2006-01-01

    @@ The instability of metal point contacts under voltage bias is calculated based on scattering theory. When the bias is applied, the transport channels will be closed and the chemical bonds will be broken, which modify the cohesive force of the point contact.

  2. Experimental investigation of SDBD plasma actuator driven by AC high voltage with a superimposed positive pulse bias voltage

    Science.gov (United States)

    Qi, Xiao-Hua; Yan, Hui-Jie; Yang, Liang; Hua, Yue; Ren, Chun-Sheng

    2017-08-01

    In this work, a driven voltage consisting of AC high voltage with a superimposed positive pulse bias voltage ("AC+ Positive pulse bias" voltage) is adopted to study the performance of a surface dielectric barrier discharge plasma actuator under atmospheric conditions. To compare the performance of the actuator driven by single-AC voltage and "AC+ Positive pulse bias" voltage, the actuator-induced thrust force and power consumption are measured as a function of the applied AC voltage, and the measured results indicate that the thrust force can be promoted significantly after superimposing the positive pulse bias voltage. The physical mechanism behind the thrust force changes is analyzed by measuring the optical properties, electrical characteristics, and surface potential distribution. Experimental results indicate that the glow-like discharge in the AC voltage half-cycle, next to the cycle where a bias voltage pulse has been applied, is enhanced after applying the positive pulse bias voltage, and this perhaps is the main reason for the thrust force increase. Moreover, surface potential measurement results reveal that the spatial electric field formed by the surface charge accumulation after positive pulse discharge can significantly affect the applied external electric field, and this perhaps can be responsible for the experimental phenomenon that the decrease of thrust force is delayed by pulse bias voltage action after the filament discharge occurs in the glow-like discharge region. The schlieren images further verify that the actuator-induced airflow velocity increases with the positive pulse voltage.

  3. Voltage biased Varistor-Transistor Hybrid Devices: Properties and Applications

    Directory of Open Access Journals (Sweden)

    Raghvendra K Pandey

    2015-08-01

    Full Text Available The paper describes the properties and potential applications of a novel hybrid varistor device originating from biased voltage induced modified nonlinear current-voltage (I-V characteristics. Single crystal of an oxide semiconductor in the family of iron-titanates with the chemical formula of Fe2TiO5 (pseudobrookite has been used as substrate for the varistor. The modifications of the varistor characteristics are achieved by superimposition of a bias voltage in the current path of the varistor. These altered I-V characteristics, when analyzed, reveal the existence of embedded transistors coexisting with the varistor. These transistors exhibit mutual conductance, signal amplification and electronic switching which are the defining signatures of a typical transistor. The tuned varistors also acquire the properties of signal amplification and mutual conductance which expand the range of applications for a varistor beyond its traditional use as circuit protector. Both tuned varistors and the embedded transistors have attributes which make them suitable for many applications in electronics including at high temperatures and for radiation dominated environments such as space.

  4. 49 CFR 236.551 - Power supply voltage; requirement.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Power supply voltage; requirement. 236.551 Section... supply voltage; requirement. The voltage of power supply shall be maintained within 10 percent of rated voltage....

  5. Energy-aware Supply Voltage and Body Biasing Voltage Scheduling Algorithm for Real-time Distributed Systems

    Institute of Scientific and Technical Information of China (English)

    SUYajuan; WEIShaojun

    2005-01-01

    Technique of energy minimization by combining Dynamic voltage scheduling (DVS) and Adaptive body biasing voltage (ABB) method for distributed realtime system at design level is proposed. First, a simplified energy optimizing model is illustrated where the supply voltage or body biasing voltage is kept as constant according to each separated frequency region, thus calculation of exceeding equation is avoided. Divergence of simplified and analytic model within 5% indicates the accuracy of this model. Based on it, the proposed approach named LEVVS (Low energy supply voltage and body biasing voltage scheduling algorithm) explores space of minimizing energy consumption by finding optimal trade-off between dynamic and static energy. The corresponding optimal supply voltage and body biasing voltage are determined by an iterative method in which the supply voltage and body biasing voltage of tasks are adjusted according to the value of energy latency differential coefficient of each task and slack time distribution of the system. Experiments show that using LEVVS approach, 51% more average energy reduction can be obtained than employing DVS method alone. Furthermore the effects of switch capacitance and global slack on the energy saving efficiency of LEVVS are investigated. The smaller the global slack or average switch capacitance is, the more the energy saving of LEVVS compared with DVS is.

  6. In situ scanning tunnelling microscopy of redox molecules. Coherent electron transfer at large bias voltages

    DEFF Research Database (Denmark)

    Zhang, Jingdong; Kuznetsov, A.M.; Ulstrup, Jens

    2003-01-01

    Theories of in situ scanning tunnelling microscopy (STM) of molecules with redox levels near the substrate and tip Fermi levels point to 'spectroscopic' current-overpotential features. Prominent features require a narrow 'probing tip', i.e. a small bias voltage, eV(bias), compared...... and tip Fermi levels. STM here involves coherent two-step interfacial electron transfer between the redox level and the enclosing substrate and tip. We have also extended previous experimental in situ STM studies of the blue copper protein Pseudomonas aeruginosa azurin, adsorbed on Au(111), to cover...

  7. Interface circuit with adjustable bias voltage enabling maximum power point tracking of capacitive energy harvesting devices

    Science.gov (United States)

    Wei, J.; Lefeuvre, E.; Mathias, H.; Costa, F.

    2016-12-01

    The operation analysis of a new interface circuit for electrostatic vibration energy harvesting with adjustable bias voltage is carried out in this paper. Two configurations determined by the open or closed states of an electronic switch are examined. The increase of the voltage across a biasing capacitor, occurring when the switch is open, is proved theoretically and experimentally. With the decrease of this biasing voltage which occurs naturally when the switch is closed due to imperfections of the circuit, the bias voltage can be maintained close to a target value by appropriate ON and OFF control of the switch. As the energy converted by the variable capacitor on each cycle depends on the bias voltage, this energy can be therefore accurately controlled. This feature opens up promising perspectives for optimization the power harvested by electrostatic devices. Simulation results with and without electromechanical coupling effect are presented. In experimental tests, a simple switch control enabling to stabilize the bias voltage is described.

  8. Structural transformation of Ge dimers on Ge(001) surfaces induced by bias voltage

    Institute of Scientific and Technical Information of China (English)

    Qin Zhi-Hui; Shi Dong-Xia; Gao Hong-Jun

    2008-01-01

    Scanning tunnelling microscopy is utilized to investigate the local bias voltage tunnelling dependent transformation between (2×1) and c(4×2) structures on Ge(001) surfaces, which is reversibly observed at room temperature and a critical bias voltage of -0.80 V. Similar transformation is also found on an epitaxial Ge islands but at a slightly different critical bias voltage of -1.00V. It is found that the interaction between the topmost atoms on the STM tip and the atoms of the dimers, and the pinning effect induced by Sb atoms, the vacancies or the epitaxial clusters, can drive the structural transformation at the critical bias voltage.

  9. Ultra-Low-Voltage Self-Body Biasing Scheme and Its Application to Basic Arithmetic Circuits

    Directory of Open Access Journals (Sweden)

    Ramiro Taco

    2015-01-01

    Full Text Available The gate level body biasing (GLBB is assessed in the context of ultra-low-voltage logic designs. To this purpose, a GLBB mirror full adder is implemented by using a commercial 45 nm bulk CMOS triple-well technology and compared to equivalent conventional zero body-biased CMOS and dynamic threshold voltage MOSFET (DTMOS circuits under different running conditions. Postlayout simulations demonstrate that, at the parity of leakage power consumption, the GLBB technique exhibits a significant concurrent reduction of the energy per operation and the delay in comparison to the conventional CMOS and DTMOS approaches. The silicon area required by the GLBB full adder is halved with respect to the equivalent DTMOS implementation, but it is higher in comparison to conventional CMOS design. Performed analysis also proves that the GLBB solution exhibits a high level of robustness against temperature fluctuations and process variations.

  10. BiasMDP: Carrier lifetime characterization technique with applied bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Jordan, Paul M., E-mail: paul.jordan@namlab.com; Simon, Daniel K.; Dirnstorfer, Ingo [Nanoelectronic Materials Laboratory gGmbH (NaMLab), Nöthnitzer Straße 64, 01187 Dresden (Germany); Mikolajick, Thomas [Nanoelectronic Materials Laboratory gGmbH (NaMLab), Nöthnitzer Straße 64, 01187 Dresden (Germany); Technische Universität Dresden, Institut für Halbleiter- und Mikrosystemtechnik, 01062 Dresden (Germany)

    2015-02-09

    A characterization method is presented, which determines fixed charge and interface defect densities in passivation layers. This method bases on a bias voltage applied to an electrode on top of the passivation layer. During a voltage sweep, the effective carrier lifetime is measured by means of microwave detected photoconductivity. When the external voltage compensates the electric field of the fixed charges, the lifetime drops to a minimum value. This minimum value correlates to the flat band voltage determined in reference impedance measurements. This correlation is measured on p-type silicon passivated by Al{sub 2}O{sub 3} and Al{sub 2}O{sub 3}/HfO{sub 2} stacks with different fixed charge densities and layer thicknesses. Negative fixed charges with densities of 3.8 × 10{sup 12 }cm{sup −2} and 0.7 × 10{sup 12 }cm{sup −2} are determined for Al{sub 2}O{sub 3} layers without and with an ultra-thin HfO{sub 2} interface, respectively. The voltage and illumination dependencies of the effective carrier lifetime are simulated with Shockley Read Hall surface recombination at continuous defects with parabolic capture cross section distributions for electrons and holes. The best match with the measured data is achieved with a very low interface defect density of 1 × 10{sup 10 }eV{sup −1} cm{sup −2} for the Al{sub 2}O{sub 3} sample with HfO{sub 2} interface.

  11. Characteristics of Single Cathode Cascaded Bias Voltage Arc Plasma

    Science.gov (United States)

    Ou, Wei; Deng, Baiquan; Zeng, Xianjun; Gou, Fujun; Xue, Xiaoyan; Zhang, Weiwei; Cao, Xiaogang; Yang, Dangxiao; Cao, Zhi

    2016-06-01

    A single cathode with a cascaded bias voltage arc plasma source has been developed with a new quartz cathode chamber, instead of the previous copper chambers, to provide better diagnostic observation and access to the plasma optical emission. The cathode chamber cooling scheme is also modified to be naturally cooled only by light emission without cooling water to improve the optical thin performance in the optical path. A single-parameter physical model has been developed to describe the power dissipated in the cascaded bias voltage arc discharge argon plasmas, which have been investigated by utilizing optical emission spectroscopy (OES) and Langmuir probe. In the experiments, discharge currents from 50 A to 100 A, argon flow rates from 800 sccm to 2000 sccm and magnetic fields of 0.1 T and 0.2 T were chosen. The results show: (a) the relationship between the averaged resistivity and the averaged current density exhibits an empirical scaling law as \\barη \\propto \\bar {j}-0.63369 and the power dissipated in the arc has a strong relation with the filling factor; (b) through the quartz, the argon ions optical emission lines have been easily observed and are dominating with wavelengths between 340 nm and 520 nm, which are the emissions of Ar+-434.81 nm and Ar+-442.60 nm line, and the intensities are increasing with the arc current and decreasing with the inlet argon flow rate; and (c) the electron density and temperature can reach 2.0 × 1019 m-3 and 0.48 eV, respectively, under the conditions of an arc current of 90 A and a magnetic field of 0.2 T. The half-width of the ne radial profile is approximatively equal to a few Larmor radii of electrons and can be regarded as the diameter of the plasma jet in the experiments. supported by the International Thermonuclear Experimental Reactor (ITER) Program Special of Ministry of Science and Technology (No. 2013GB114003), and National Natural Science Foundation of China (Nos. 11275135, 11475122)

  12. Characterization of (100)-orientated diamond film grown by HFCVD method with a positive DC bias voltage

    Institute of Scientific and Technical Information of China (English)

    MA Ying; WANG Lin-jun; LIU Jian-min; SU Qing-feng; XU Run; PENG Hong-yan; SHI Wei-min; XIA Yi-ben

    2006-01-01

    The (100)-orientated diamond film was deposited by hot-filament chemical vapor deposition (HFCVD) technology with a positive DC bias voltage. The morphology,X-ray diffraction (XRD),RAMAN spectrum and dark current versus applied voltage characteristics analysis show that the positive dc bias can increase the nucleation density and (100)-orientated growth,making the growth of the high quality diamond film easier and cheaper than using other methods.

  13. Bistability in voltage-biased normal-metal/insulator/superconductor/insulator/normal-metal structures

    NARCIS (Netherlands)

    Snyman, I.; Nazarov, Y.V.

    2009-01-01

    As a generic example of a voltage-driven superconducting structure, we study a short superconductor connected to normal leads by means of low transparency tunnel junctions with a voltage bias V between the leads. The superconducting order parameter Δ is to be determined self-consistently. We study t

  14. Perspectives of voltage control for magnetic exchange bias in multiferroic heterostructures

    Science.gov (United States)

    Yang, Q.; Zhou, Z.; Sun, N. X.; Liu, M.

    2017-04-01

    Exchange bias, as an internal magnetic bias induced by a ferromagnetic-antiferromagnetic exchange coupling, is extremely important in many magnetic applications such as memories, sensors and other devices. Voltage control of exchange bias in multiferroics provides an energy-efficient way to achieve a rapidly 180° deterministic switching of magnetization, which has been considered as a key challenge in realizing next generation of fast, compact and ultra-low power magnetoelectric memories and sensors. Additionally, exchange bias can enhance dynamic magnetoelectric coupling strength in an external-field-free manner. In this paper, we provide a perspective on voltage control of exchange bias in different multiferroic heterostructures. Brief mechanization and related experiments are discussed as well as future trend and challenges that can be overcome by electrically tuning of exchange bias in state-of-the-art magnetoelectric devices.

  15. Study of the Dependence on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

    Science.gov (United States)

    Bandler, Simon

    2011-01-01

    At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in the AC bias configuration. For x-ray photons at 6keV the AC biased pixel shows a best energy resolution of 3.7eV, which is about a factor of 2 worse than the energy resolution observed in identical DC-biased pixels. To better understand the reasons of this discrepancy, we investigated the detector performance as a function of temperature, bias working point and applied magnetic field. A strong periodic dependence of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recent weak-link behaviour observed inTES microcalorimeters.

  16. Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs

    Science.gov (United States)

    Green, Ron; Lelis, Aivars; Habersat, Daniel

    2016-04-01

    This work reports on three important aspects of threshold-voltage instability in SiC power MOSFETs: (1) the threshold-voltage bias-temperature instability observed in commercial devices from two leading manufacturers, (2) a summary of the basic mechanisms driving this instability, and (3) the need for an improved test method for evaluating these devices. Even under significant overstress conditions, no negative threshold-voltage shift was observed in the most-recent-vintage commercial devices from one of the manufacturers during a -15 V, 175 °C negative-bias temperature stress lasting 120 h.

  17. Current-Voltage Characteristics of Molecular Devices at Low Bias

    Institute of Scientific and Technical Information of China (English)

    LIAO Yun-Xing; CHEN Hao; R.Note; H.Mizuseki; Y.Kawazoe

    2004-01-01

    We use density functional theory and the Green function formalism with charge energy effect included in the self-consistent calculation of the Ⅰ- Ⅴ characteristics of a single benzene ring with an appendage of cf3, and identify some interesting properties of the Ⅰ-Ⅴ characteristics at low bias. The molecule picks up a fractional charge at zero bias, then the additional fractional charge produces a barrier on the junction of the molecule and contacts to perturb current flow on the molecule. This phenomenon may be useful for the design of future molecular devices.

  18. Effects of DC bias voltages on the RF-excited plasma-tissue interaction

    Science.gov (United States)

    Yang, Aijun; Liu, Dingxin; Wang, Xiaohua; Li, Jiafeng; Chen, Chen; Rong, Mingzhe; Kong, Michael G.

    2016-10-01

    We present in this study how DC bias voltage impacts on the fluxes of reactive species on the skin tissue by means of a plasma-tissue interaction model. The DC bias voltage inputs less than 2% of the total discharge power, and hence it has little influence on the whole plasma characteritics including the volume-averaged densities of reactive species and the heating effect. However, it pushes the plasma bulk towards the skin surface, which significantly changes the local plasma characteristics in the vicinity of the skin surface, and in consequence remarkably enhances the flux densities of reactive species on the skin tissue. With the consideration of plasma dosage and heat damage on the skin tissue, DC bias voltage is a better approach compared with the common approach of increasing the plasma power. Since the DC voltage is easy to apply on the human body, it is a promising approach for use in clincial applications.

  19. Output pressure and harmonic characteristics of a CMUT as function of bias and excitation voltage

    DEFF Research Database (Denmark)

    Lei, Anders; Diederichsen, Søren Elmin; Hansen, Sebastian Molbech

    2015-01-01

    The large bandwidth makes CMUT based transducers interesting for both conventional and harmonic imaging. The inherent nonlinear behavior of the CMUT, however, poses an issue for harmonic imaging as it is difficult to dissociate the harmonics generated in the tissue from the harmonic content...... of the transmitted signal. The generation of intrinsic harmonics by the CMUT can be minimized by decreasing the excitation signal. This, however, leads to lower fundamental pressure which limits the desired generation of harmonics in the medium. This work examines the output pressure and harmonic characteristics...... of a CMUT as function of bias and excitation voltage. The harmonic to fundamental ratio of the surface pressures declines for decreasing excitation voltage and increasing bias voltage. The ratio, however, becomes unchanged for bias levels close to the pull-in voltage. The harmonic limitations of the CMUT...

  20. An AMOLED AC-Biased Pixel Design Compensating the Threshold Voltage and I-R Drop

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2011-01-01

    Full Text Available We propose a novel pixel design and an AC bias driving method for active-matrix organic light-emitting diode (AM-OLED displays using low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs. The proposed threshold voltage and I-R drop compensation circuit, which comprised three transistors and one capacitor, have been verified to supply uniform output current by simulation work using the Automatic Integrated Circuit Modeling Simulation Program with Integrated Circuit Emphasis (AIM-SPICE simulator. The simulated results demonstrate excellent properties such as low error rate of OLED anode voltage variation (<0.7% and low voltage drop of VDD power line. The proposed pixel circuit effectively enables threshold-voltage-deviation correction of driving TFT and compensates for the voltage drop of VDD power line using AC bias on OLED cathode.

  1. Analysis of bias voltage scan data recorded with hybrid Timepix1 silicon pixel assemblies at the DESY testbeam

    CERN Document Server

    Maimon, Shir

    2014-01-01

    This report will present results from the analysis of bias voltage scans in Timepix1 testbeam data. Three assemblies of varying sensor thickness were used to collect data. The effect of the bias voltage on charge sharing, in particular cluster size, was investigated and found to have a significant impact. The effect of the bias voltage on energy collection was also studied, leading to estimates for the depletion voltage, donor concentration, mobility and resistivity of each assembly. Finally, the effect of the bias voltage on the two-hit cluster resolution and detection efficiency was investigated. This report contains extracts from a longer document (LCD-OPEN-2014-001).

  2. Study of the Dependency on Magnetic Field and Bias Voltage of an AC-Biased TES Microcalorimeter

    Science.gov (United States)

    Gottardi, L.; Bruijn, M.; denHartog, R.; Hoevers, H.; deKorte, P.; vanderKuur, J.; Linderman, M.; Adams, J.; Bailey, C.; Bandler, S.; Chervenak, J.; Eckart, M.; Finkbeiner, F.; Kelley, R.; Kilbourne, C.; Porter, F.; Sadlier, J.; Smith, S.

    2012-01-01

    At SRON we are studying the performance of a Goddard Space Flight Center single pixel TES microcalorimeter operated in an AC bias configuration. For x-ray photons at 6 keV the pixel shows an x-ray energy resolution Delta E(sub FWHM) = 3.7 eV, which is about a factor 2 worse than the energy resolution observed in an identical DC-biased pixel. In order to better understand the reasons for this discrepancy we characterized the detector as a function of temperature, bias working point and applied perpendicular magnetic field. A strong periodic dependency of the detector noise on the TES AC bias voltage is measured. We discuss the results in the framework of the recently observed weak-link behaviour of a TES microcalorimeter.

  3. ZnO films deposited by optimized PLD technique with bias voltages

    Energy Technology Data Exchange (ETDEWEB)

    Yamaguchi, Hiroyuki; Shitara, Tamae; Komiyama, Takao; Chonan, Yasunori; Aoyama, Takashi [Department of Electronics and Information Systems, Akita Prefectural University, 84-4 Tsuchiya Ebinokuchi, 015-0055 Yuri-Honjo (Japan)

    2010-02-15

    The pulsed laser deposition (PLD) technique with bias voltage application for formation of high quality ZnO films was investigated. Oxygen ambient in the PLD chamber significantly decreased the photoluminescence (PL) intensity of near band edge (NBE) emission. Then, instead of using oxygen ambient, the PLD technique with bias voltage application was optimized to attain the stoichiometric composition of the ZnO films. As the deposition temperature was increased, the X-ray spectrum width diffracted from the (0002) planes was decreased and it showed a minimum value at 700 C. The PL intensity of the NBE emission also had its maximum value for the film deposited at 700 C. For the ZnO films deposited at 700 C, the X-ray spectrum width showed the minimum value under a bias voltage of -50 V. The PL intensity of the NBE emission also had a maximum value under the same bias voltage. Thus, ZnO films deposited under a bias voltage of -50 V at 700 C had strong NBE emission intensities. These results could be explained not only by attaining the stoichiometric composition of the ZnO film but also by decreasing the number of high energy O{sup 2-} ions which caused non-radiative recombination centers in the film. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Voltage biasing, cyclic voltammetry, & electrical impedance spectroscopy for neural interfaces.

    Science.gov (United States)

    Wilks, Seth J; Richner, Tom J; Brodnick, Sarah K; Kipke, Daryl R; Williams, Justin C; Otto, Kevin J

    2012-02-24

    Electrical impedance spectroscopy (EIS) and cyclic voltammetry (CV) measure properties of the electrode-tissue interface without additional invasive procedures, and can be used to monitor electrode performance over the long term. EIS measures electrical impedance at multiple frequencies, and increases in impedance indicate increased glial scar formation around the device, while cyclic voltammetry measures the charge carrying capacity of the electrode, and indicates how charge is transferred at different voltage levels. As implanted electrodes age, EIS and CV data change, and electrode sites that previously recorded spiking neurons often exhibit significantly lower efficacy for neural recording. The application of a brief voltage pulse to implanted electrode arrays, known as rejuvenation, can bring back spiking activity on otherwise silent electrode sites for a period of time. Rejuvenation alters EIS and CV, and can be monitored by these complementary methods. Typically, EIS is measured daily as an indication of the tissue response at the electrode site. If spikes are absent in a channel that previously had spikes, then CV is used to determine the charge carrying capacity of the electrode site, and rejuvenation can be applied to improve the interface efficacy. CV and EIS are then repeated to check the changes at the electrode-tissue interface, and neural recordings are collected. The overall goal of rejuvenation is to extend the functional lifetime of implanted arrays.

  5. Improved performance of a barrier-discharge plasma jet biased by a direct-current voltage

    Science.gov (United States)

    Li, Xuechen; Li, Yaru; Zhang, Panpan; Jia, Pengying; Dong, Lifang

    2016-01-01

    One of the challenges that plasma research encounters is how to generate a large-scale plasma plume at atmospheric pressure. Through utilizing a third electrode biased by a direct-current voltage, a longer plasma plume is generated by a plasma jet in dielectric barrier discharge configurations. Results indicate that the plume length increases until it reaches the third electrode with increasing the bias voltage. By fast photography, it is found that the plume consists of two types of streamers under the influence of the bias voltage, which develops from a guided streamer to a branching one with leaving the tube opening. The transition from the guided streamer to the branching one can be attributed to the electric field and the air/argon fraction. PMID:27759080

  6. Improved performance of a barrier-discharge plasma jet biased by a direct-current voltage

    Science.gov (United States)

    Li, Xuechen; Li, Yaru; Zhang, Panpan; Jia, Pengying; Dong, Lifang

    2016-10-01

    One of the challenges that plasma research encounters is how to generate a large-scale plasma plume at atmospheric pressure. Through utilizing a third electrode biased by a direct-current voltage, a longer plasma plume is generated by a plasma jet in dielectric barrier discharge configurations. Results indicate that the plume length increases until it reaches the third electrode with increasing the bias voltage. By fast photography, it is found that the plume consists of two types of streamers under the influence of the bias voltage, which develops from a guided streamer to a branching one with leaving the tube opening. The transition from the guided streamer to the branching one can be attributed to the electric field and the air/argon fraction.

  7. The enhanced low dose rate sensitivity of a linear voltage regulator with different biases

    Institute of Scientific and Technical Information of China (English)

    Wang Yiyuan; Lu Wu; Ren Diyuan; Guo Qi; Yu Xuefeng; Gao Bo

    2011-01-01

    A linear voltage regulator was irradiated by 60Co γ at high and low dose rates with two bias conditions to investigate the dose rate effect.The devices exhibit enhanced low dose rate sensitivity (ELDRS) under both biases.Comparing the enhancement factors between zero and working biases,it was found that the ELDRS is more severe under zero bias conditions.This confirms that the ELDRS is related to the low electric field in a bipolar structure.The reasons for the change in the line regulation and the maximum drive current were analyzed by combining the principle of linear voltage regulator with irradiation response of the transistors and error amplifier in the regulator.This may be helpful for designing radiation hardened devices.

  8. Photoresponse of resonant tunneling diode photodetectors as a function of bias voltage

    Science.gov (United States)

    Pfenning, Andreas; Hartmann, Fabian; Langer, Fabian; Kamp, Martin; Höfling, Sven; Worschech, Lukas

    2016-09-01

    We have studied the photocurrent-voltage relation of resonant tunneling diode (RTD) photodetectors by means of electrooptical transport measurements. The investigated RTDs are based on an Al0.6Ga0.4As/GaAs double barrier resonant tunneling structure (RTS) with an integrated GaInNAs absorption layer for light sensing at the telecommunication wavelength of λ= 1.3 μm. Under illumination, photogenerated holes can be captured for accumulation in vicinity to the RTS and modulate the resonant tunneling current that is highly sensitive to changes in the local electrostatic potential. The resulting photocurrent-voltage relation is found to be a nonlinear function of the applied bias voltage, and governed by the interplay of the electronic transport properties of the RTS and the dynamics of photogenerated holes. Time-resolved photocurrent measurements were employed to analyze the dynamics of photogenerated holes. From the photocurrent-time traces the quantum-efficiency and mean lifetime of photogenerated holes can be separately determined. We found that the photoresponse is suppressed by a low quantum efficiency for bias voltages below V 1 V, the built-in field is compensated by the external bias, and η(V) takes on a constant value. In this regime, the RTD photoresponse is mainly determined by the lifetime of holes accumulated at the RTS. The lifetime is limited by thermionic carrier escape and was found to decrease exponentially with the applied bias voltage.

  9. Sizing of SRAM Cell with Voltage Biasing Techniques for Reliability Enhancement of Memory and PUF Functions

    Directory of Open Access Journals (Sweden)

    Chip-Hong Chang

    2016-08-01

    Full Text Available Static Random Access Memory (SRAM has recently been developed into a physical unclonable function (PUF for generating chip-unique signatures for hardware cryptography. The most compelling issue in designing a good SRAM-based PUF (SPUF is that while maximizing the mismatches between the transistors in the cross-coupled inverters improves the quality of the SPUF, this ironically also gives rise to increased memory read/write failures. For this reason, the memory cells of existing SPUFs cannot be reused as storage elements, which increases the overheads of cryptographic system where long signatures and high-density storage are both required. This paper presents a novel design methodology for dual-mode SRAM cell optimization. The design conflicts are resolved by using word-line voltage modulation, dynamic voltage scaling, negative bit-line and adaptive body bias techniques to compensate for reliability degradation due to transistor downsizing. The augmented circuit-level techniques expand the design space to achieve a good solution to fulfill several otherwise contradicting key design qualities for both modes of operation, as evinced by our statistical analysis and simulation results based on complementary metal–oxide–semiconductor (CMOS 45 nm bulk Predictive Technology Model.

  10. Improvement of stability of sinusoidally driven atmospheric pressure plasma jet using auxiliary bias voltage

    Directory of Open Access Journals (Sweden)

    Hyun-Jin Kim

    2015-12-01

    Full Text Available In this study, we have proposed the auxiliary bias pulse scheme to improve the stability of atmospheric pressure plasma jets driven by an AC sinusoidal waveform excitation source. The stability of discharges can be significantly improved by the compensation of irregular variation in memory voltage due to the effect of auxiliary bias pulse. From the parametric study, such as the width, voltage, and onset time of auxiliary bias pulse, it has been demonstrated that the auxiliary bias pulse plays a significant role in suppressing the irregular discharges caused by the irregular variation in memory voltage and stable discharge can be initiated with the termination of the auxiliary bias pulse. As a result of further investigating the effects of the auxiliary pulse scheme on the jet stability under various process conditions such as the distance between the jet head and the counter electrode, and carrier gas flow, the jet stability can be improved by adjusting the amplitude and number of the bias pulse depending on the variations in the process conditions.

  11. Performance enhancement of ITO/oxide/semiconductor MOS-structure silicon solar cells with voltage biasing.

    Science.gov (United States)

    Ho, Wen-Jeng; Huang, Min-Chun; Lee, Yi-Yu; Hou, Zhong-Fu; Liao, Changn-Jyun

    2014-01-01

    In this study, we demonstrate the photovoltaic performance enhancement of a p-n junction silicon solar cell using a transparent-antireflective ITO/oxide film deposited on the spacing of the front-side finger electrodes and with a DC voltage applied on the ITO-electrode. The depletion width of the p-n junction under the ITO-electrode was induced and extended while the absorbed volume and built-in electric field were also increased when the biasing voltage was increased. The photocurrent and conversion efficiency were increased because more photo-carriers are generated in a larger absorbed volume and because the carriers transported and collected more effectively due to higher biasing voltage effects. Compared to a reference solar cell (which was biased at 0 V), a conversion efficiency enhancement of 26.57% (from 12.42% to 15.72%) and short-circuit current density enhancement of 42.43% (from 29.51 to 42.03 mA/cm(2)) were obtained as the proposed MOS-structure solar cell biased at 2.5 V. In addition, the capacitance-volt (C-V) measurement was also used to examine the mechanism of photovoltaic performance enhancement due to the depletion width being enlarged by applying a DC voltage on an ITO-electrode.

  12. Effects of Voltage-Bias Annealing on Metastable Defect Populations in CIGS and CZTSe Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Harvey, Steven P.; Johnston, Steve; Teeter, Glenn

    2016-11-21

    We report on voltage-bias annealing (VBA) experiments performed on CIGS and CZTSe solar cells. In these experiments, completed devices were annealed at moderate temperatures and subsequently quenched with continuously applied voltage bias. These treatments resulted in substantial reversible changes in device characteristics. Photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density from ~1014 cm-3 to ~1017 cm-3. In the CZTSe device, open-circuit voltage varied from 289 meV to 446 meV, caused by an approximately factor of fifty change in the CZTSe hole density. We interpret these findings in terms of reversible changes to the metastable point-defect populations that control key properties in these materials. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.

  13. Voltage Control of Exchange Bias in a Chromium Oxide Based Thin Film Heterostructure

    Science.gov (United States)

    Echtenkamp, Will; Street, Mike; Mahmood, Ather; Binek, Christian

    Controlling magnetism by electrical means is a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Isothermal electric control of exchange bias has been achieved near room temperature using bulk, single crystal, magnetoelectric Cr2O3. In this study the electrically-controlled exchange bias is investigated in an all thin film Cr2O3/PdCo exchange bias heterosystem where an MBE grown ferromagnetic and perpendicular anisotropic Pd/Co multilayer has been deposited on a PLD grown (0001) Cr2O3 thin film. Prototype devices are fabricated using lithography techniques. Using a process of magnetoelectric annealing, voltage control of exchange bias in Cr2O3 heterostructures is demonstrated with significant implications for scalability of ultra-low power memory and logical devices. In addition, the dependence of the exchange bias on the applied electric and magnetic fields are independently studied at 300K and isothermal voltage-controlled switching is investigated. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC DMR-0820521.

  14. Low-Voltage Process-Compensated VCO with On-Chip Process Monitoring and Body-Biasing Circuit Techniques

    OpenAIRE

    Ueno, Ken; Hirose, Tetsuya; Asai, Tetsuya; Amemiya, Yoshihito

    2009-01-01

    A voltage-controlled oscillator (VCO) tolerant to process variations at lower supply voltage was proposed. The circuit consists of an on-chip threshold-voltage-monitoring circuit, a current-source circuit, a body-biasing control circuit, and the delay cells of the VCO. Because variations in low-voltage VCO frequency are mainly determined by that of the current in delay cells. a current-compensation technique was adopted by using an on-chip threshold-voltage-monitoring circuit and body-biasing...

  15. Removal of shells of multi-wall carbon nanotubes by repeatedly scanning bias voltage

    Institute of Scientific and Technical Information of China (English)

    LI Qiuhong; WANG Taihong

    2004-01-01

    Carbon nanotubes can either be metallic or semiconducting, depending on their chirality. IBM converted multi-wall nanotubes into either a metallic or a semicon- ducting conductor by selectively removing the shells of the MWNTs. This was realized by applying a constant voltage to the tubes in air. Here we report a new method to remove the shells of a single MWNT just by repeatedly scanning the bias voltage in vacuum. Both the direct contact of the outmost shell with the electrodes and the high anisotropy of thermal conductivity help to remove the shells one by one.

  16. SEMICONDUCTOR DEVICES Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT

    Science.gov (United States)

    Yan, Pu; Liang, Wang; Tingting, Yuan; Sihua, Ouyang; Lei, Pang; Guoguo, Liu; Weijun, Luo; Xinyu, Liu

    2010-10-01

    The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate—source and gate—drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is proposed to reflect the behaviors of the gate—source and gate—drain capacitances, which shows a good agreement with the measured capacitances, and the power performance obtains good results compared with the measured data from the capacitance model.

  17. Design of a Low Voltage CMOS LNA at 2 GHz with Substrate-Bias

    Science.gov (United States)

    Wan Muhamad Hatta, S. F.; Soin, N.

    2008-11-01

    A low-voltage (1.5V), 2 GHz cascode CMOS low noise amplifier (LNA) has been designed and simulated using Silvaco's SMARTSPICE RF. The proposed design employs substrate bias of 0.5V and utilizes inductive source degeneration. This paper further presents an analysis on the effect of substrate bias on the MOSFET's threshold voltage as well as the transconductance. The simulated power gain (S21) is of 5.2 dB and a noise figure (NF) of 2.2975 dB is achieved at the operating frequency of 2 GHz. The Input Referred 1dB Compression Point (P1dB) and the third-order intercept point (IP3) are -12.891 dB and -1.6844 dB respectively.

  18. Influence of bias voltage on the stability of CsI photocathodes exposed to air

    CERN Document Server

    Nitti, M A; Nappi, E; Singh, B K; Valentini, A

    2002-01-01

    We describe a possible correlation between the bias voltage applied to the substrate during the growth of CsI photocathodes and the variation of quantum efficiency (QE) after one day exposure to humid air. It was found that fresh samples are much less sensitive to humid air when a high negative bias voltage was applied during film growth. A model based on surface film interaction with water molecules is presented for the observed effect. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) measurements have been performed to examine, respectively, the bulk structure and the surface of fresh and exposed CsI samples. Also reported are transmittance measurements for fresh and aged CsI samples in the wavelength range 190-850 nm.

  19. Influence of bias voltage on structural and optical properties of TiNx thin films

    Science.gov (United States)

    Singh, Omveer; Dahiya, Raj P.; Malik, Hitendra K.; Kumar, Parmod

    2015-08-01

    In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H2 and N2 gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

  20. Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

    DEFF Research Database (Denmark)

    Igor, Mucha

    1997-01-01

    The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed...... promise a good maintenance of the operating point of the floating-gate devices. Examples of utilizing of such bias sources in low-noise sensor preamplifiers are discussed....

  1. Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

    DEFF Research Database (Denmark)

    Igor, Mucha

    1997-01-01

    The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed...... promise a good maintenance of the operating point of the floating-gate devices. Examples of utilizing of such bias sources in low-noise sensor preamplifiers are discussed....

  2. Dependence of Structure and Haemocompatibility of Amorphous Carbon Films on Substrate Bias Voltage

    Institute of Scientific and Technical Information of China (English)

    GUO Yang-Ming; MO Dang; LI Zhe-Yi; LIU Yi; HE Zhen-Hui; CHEN Di-Hu

    2004-01-01

    @@ Tetrahedral amorphous hydrogenated carbon (ta-C:H) films on Si(100) substrates were prepared by using a magnetic-field-filter plasma stream deposition system. Samples with different ratios of spa-bond to sp2-bond were obtained by changing the bias voltage applied to the substrates. The ellipsometric spectra of various carbon films in the photon energy range of 1.9-5.4eV were measured. The refractive index n and the relative sp3 C ratio of these films were obtained by simulating their ellipsometric spectra using the Forouhi-Bloomer model and by using the Bruggeman effective medium approximation, respectively. The haemocompatibility of these ta-C:H films was analysed by observation of platelet adhesion and measurement of kinetic clotting time. The results show that the sp3 C fraction is dependent on the substrate bias voltage, and the haemocompatibility is dependent on the ratio of sp3-bond to sp2-bond. A good haemocompatibility material of ta-C:H films with a suitable sp3 C fraction can be prepared by changing the substrate bias voltage.

  3. Relationship between bias voltage and microstructure as well as properties of CrAlYN films

    Institute of Scientific and Technical Information of China (English)

    付英英; 李红轩; 吉利; 刘晓红; 刘流; 周惠娣; 陈建敏

    2015-01-01

    In this work, a series of CrAlYN films doped with 1 at.%yttrium were deposited by unbalanced reactive magnetron sputtering under different bias voltages. The effects of bias voltage on microstructure and properties of the CrAlYN films were subsequently investigated. It is found that all the as-deposited films have similar chemical composition and crystalline structure. However, the bias voltage has significant impact on the mechanical properties and oxidation resistance of the resulting films. Namely, the film deposited at 100 V has the highest hardness and best oxidation resistance, which are mainly attributed to its denser structure and higher Al content than others. In addition, the film obtained at 100 V exhibits superior oxidation resistance even at 1000 ◦C, and good friction and wear properties at 600 and 800 ◦C, and the latter two are mainly ascribed to the formation of compact transfer layer on the worn surfaces. However, this film experienced obvious wear loss at low testing temperatures (i.e., 200 and 400◦C) due to the serious abrasive wear.

  4. Current-voltage characteristics of quantum-point contacts in the closed-channel regime: Transforming the bias voltage into an energy scale

    DEFF Research Database (Denmark)

    Gloos, K.; Utko, P.; Aagesen, M.;

    2006-01-01

    We investigate the I(V) characteristics (current versus bias voltage) of side-gated quantum-point contacts, defined in GaAs/AlxGa1-xAs heterostructures. These point contacts are operated in the closed-channel regime, that is, at fixed gate voltages below zero-bias pinch-off for conductance. Our...... analysis is based on a single scaling factor, extracted from the experimental I(V) characteristics. For both polarities, this scaling factor transforms the change of bias voltage into a change of electron energy. The latter is determined with respect to the top of the potential barrier of the contact....... Such a built-in energy-voltage calibration allows us to distinguish between the different contributions to the electron transport across the pinched-off contact due to thermal activation or quantum tunneling. The first involves the height of the barrier, and the latter also its length. In the model that we...

  5. Voltage Controlled Exchange Bias in a Cr2O3 based heterostructure

    Science.gov (United States)

    Echtenkamp, Will; Street, Mike; Binek, Christian

    2015-03-01

    Controlling magnetism by electrical means is a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Isothermal electric control of exchange bias has been achieved near room temperature using bulk, single crystal, magnetoelectric Cr2O3, which has a voltage controlled net magnetization at the (0001) surface. Voltage control of magnetism in a Cr2O3 thin film system has presented significant challenges. In this study we explore the electric control of exchange bias in an all-thin-film system of decreasing chromia film thickness with significant implications for scalability of ultra-low power memory and logical devices. Cross-sectional HRTEM indicates that grain boundaries in the metallic bottom electrode propagate into the Cr2O3 thin film with detrimental effects on leakage currents. We address this issue via a three-step growth method for the deposition of epitaxial Pd on sapphire. The resulting microstructure of the films is analyzed by reflection high-energy electron diffraction, tunneling electron microscopy and x-ray diffraction. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC DMR-0820521.

  6. Negative Bias Temperature Instability "Recovery" under Negative Stress Voltage with Different Oxide Thicknesses

    Institute of Scientific and Technical Information of China (English)

    CAO Yan-Rong; MA Xiao-Hua; HAO Yue; ZHU Min-Bo; TIAN Wen-Chao; ZHANG Yue

    2011-01-01

    Different phenomena are observed under negative gate voltage stress which is smaller than the previous degradation stress in PMOSFETs with different oxide thicknesses. We adopt the real time method to make a point of the drain current to study the degradation and recovery of negative bias temperature instability (NBTI). For the device with thin oxide, recovery phenomenon appears when smaller negative voltage stress was applied, due to the more influencing oxide charges detrapping effects than the interface states. For the device with thick oxide, not recovery but degradation phenomenon comes forth. As many charges are trapped in the deeper position and higher energy level in the oxide, these charges can not be detrapped. Therefore, the effect of the charge detrapping is smaller than that of the interface states in the thick oxide. The degradation presents itself during the 'recovery' time.

  7. Chemical and Morphological Characterization of Magnetron Sputtered at Different Bias Voltages Cr-Al-C Coatings

    Directory of Open Access Journals (Sweden)

    Aleksei Obrosov

    2017-02-01

    Full Text Available MAX phases (M = transition metal, A = A-group element, and X = C/N are of special interest because they possess a unique combination of the advantages of both metals and ceramics. Most attention is attracted to the ternary carbide Cr2AlC because of its excellent high-temperature oxidation, as well as hot corrosion resistance. Despite lots of publications, up to now the influence of bias voltage on the chemical bonding structure, surface morphology, and mechanical properties of the film is still not well understood. In the current study, Cr-Al-C films were deposited on silicon wafers (100 and Inconel 718 super alloy by dc magnetron sputtering with different substrate bias voltages and investigated using Scanning Electron Microscopy (SEM, X-ray Photoelectron Spectroscopy (XPS, X-ray Diffraction (XRD, Atomic Force Microscopy (AFM, and nanoindentation. Transmission Electron Microscopy (TEM was used to analyze the correlation between the growth of the films and the coating microstructure. The XPS results confirm the presence of Cr2AlC MAX phase due to a negative shift of 0.6–0.9 eV of the Al2p to pure aluminum carbide peak. The XRD results reveal the presence of Cr2AlC MAX Phase and carbide phases, as well as intermetallic AlCr2. The film thickness decreases from 8.95 to 6.98 µm with increasing bias voltage. The coatings deposited at 90 V exhibit the lowest roughness (33 nm and granular size (76 nm combined with the highest hardness (15.9 GPa. The ratio of Al carbide to carbide-like carbon state changes from 0.12 to 0.22 and correlates with the mechanical properties of the coatings. TEM confirms the columnar structure, with a nanocrystalline substructure, of the films.

  8. Voltage controlled exchange bias in an all-thin-film Cr2O3 based heterostructure

    Science.gov (United States)

    Echtenkamp, Will; Binek, Christian

    2014-03-01

    Spintronics utilizes the electron's spin degree of freedom for an advanced generation of electronic devices with novel functionalities. Controlling magnetism by electrical means has been identified as a key challenge in the field of spintronics, and electric control of exchange bias is one of the most promising routes to address this challenge. Previously, robust isothermal electric control of exchange bias has been achieved near room temperature utilizing a bulk single crystal of Cr2O3. In this study electric control of exchange bias in an all-thin-film system is demonstrated with significant implications for device realization. In particular, voltage controlled switching of exchange bias in a Cr2O3 based magnetoelectric magnetic tunnel junction enables nonvolatile memory storage with virtually dissipationless writing at, or above, room temperature. Additionally, unique physical properties which arise due to the Cr2O3 thin film geometry are highlighted. This project is supported by NSF through MRSEC DMR 0213808, by the NRC/NRI supplement to MRSEC, and by CNFD and C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program.

  9. Enhancement of the spin Hall voltage in a reverse-biased planar p -n junction

    Science.gov (United States)

    Nádvorník, L.; Olejník, K.; Němec, P.; Novák, V.; Janda, T.; Wunderlich, J.; Trojánek, F.; Jungwirth, T.

    2016-08-01

    We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a p -n junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10 μ m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the microdevice. It is shown that the p -n bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly nonlinear in the p -n bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the nonlinear change in the carrier density at the Hall cross with the p -n bias.

  10. TiAlN coatings deposited by triode magnetron sputtering varying the bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Devia, D.M. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Cra. 27 No. 64-60, Manizales, Caldas (Colombia); Laboratorio de Materiales, Universidad Nacional de Colombia Sede Medellin, Sede Medellin, Antioquia (Colombia); Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Cra. 27 No. 64-60, Manizales, Caldas (Colombia); Arango, P.J. [Laboratorio de Fisica del Plasma, Universidad Nacional de Colombia Sede Manizales, Cra. 27 No. 64-60, Manizales, Caldas (Colombia); Tschiptschin, A.P. [Escola Politecnica da Universidade de Sao Paulo, Depto. de Engenharia Metalurgica e de Materiais, Sao Paulo, SP (Brazil); Velez, J.M. [Laboratorio de Materiales, Universidad Nacional de Colombia Sede Medellin, Sede Medellin, Antioquia (Colombia)

    2011-05-01

    TiAlN films were deposited on AISI O1 tool steel using a triode magnetron sputtering system. The bias voltage effect on the composition, thickness, crystallography, microstructure, hardness and adhesion strength was investigated. The coatings thickness and elemental composition analyses were carried out using scanning electron microscopy (SEM) together with energy dispersive X-ray (EDS). The re-sputtering effect due to the high-energy ions bombardment on the film surface influenced the coatings thickness. The films crystallography was investigated using X-ray diffraction characterization. The X-ray diffraction (XRD) data show that TiAlN coatings were crystallized in the cubic NaCl B1 structure, with orientations in the {l_brace}1 1 1{r_brace}, {l_brace}2 0 0{r_brace} {l_brace}2 2 0{r_brace} and {l_brace}3 1 1{r_brace} crystallographic planes. The surface morphology (roughness and grain size) of TiAlN coatings was investigated by atomic force microscopy (AFM). By increasing the substrate bias voltage from -40 to -150 V, hardness decreased from 32 GPa to 19 GPa. Scratch tester was used for measuring the critical loads and for measuring the adhesion.

  11. Effect of bias voltage on microstructure and mechanical properties of arc evaporated (Ti, Al)N hard coatings

    Indian Academy of Sciences (India)

    F Aliaj; N Syla; S Avdiaj; T Dilo

    2013-06-01

    In the present study, authors report on the effect that substrate bias voltage has on the microstructure and mechanical properties of (Ti, Al)N hard coatings deposited with cathodic arc evaporation (CAE) technique. The coatings were deposited from a Ti0.5Al0.5 powder metallurgical target in a reactive nitrogen atmosphere at three different bias voltages: UB = −25, −50 and −100 V. The coatings were characterized in terms of compositional, microstructural and mechanical properties. Microstructure of the coatings was investigated with the aid of X-ray diffraction in glancing angle mode, which revealed information on phase composition, crystallite size, stress-free lattice parameter and residual stress. Mechanical properties were deduced from nano-indentation measurements. The residual stress in all the coatings was compressive and increased with increasing bias voltage in a manner similar to that reported in literature for Ti–Al–N coatings deposited with CAE. The bias voltage was also found to significantly influence the phase composition and crystallite size. At −25 V bias voltage the coating was found in single phase fcc-(Ti, Al)N and with relatively large crystallites of ∼9 nm. At higher bias voltages (−50 and −100 V), the coatings were found in dual phase fcc-(Ti, Al)N and fcc-AlN and the size of crystallites reduced to approximately 5 nm. The reduction of crystallite size and the increase of compressive residual stress with increasing bias voltage both contributed to an increase in hardness of the coatings.

  12. Eliminating leakage current in voltage-controlled exchange-bias devices

    Science.gov (United States)

    Mahmood, Ather; Echtenkamp, Will; Street, Michael; Binek, Christian; Magnetic Heterostructures Team

    Manipulation of magnetism by electric field has drawn much attention due to the technological importance for low-power devices, and for understanding fundamental magnetoelectric phenomena. A manifestation of electrically controlled magnetism is voltage control of exchange bias (EB). Robust isothermal voltage control of EB was demonstrated near room temperature using a heterostructure of Co/Pd thin film and an exchange coupled single crystal of the antiferromagnetic Cr2O3 (Chromia). A major obstacle for EB in lithographically patterned Chromia based thin-film devices is to minimize the leakage currents at high electric fields (>10 kV/mm). By combining electrical measurements on patterned devices and conductive Atomic Force Microscopy of Chromia thin-films, we investigate the defects which form conducting paths impeding the application of sufficient voltage for demonstrating the isothermal EB switching in thin film heterostructures. Technological challenges in the device fabrication will be discussed. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC Abstract DMR-0820521.

  13. Time scales of bias voltage effects in FE/MgO-based magnetic tunnel junctions with voltage-dependent perpendicular anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Lytvynenko, Ia.M. [Sumy State University, 2, Rimskogo-Korsakova Str., 40007 Sumy (Ukraine); Hauet, T., E-mail: thomas.hauet@univ-lorraine.fr [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506 Vandoeuvre les Nancy (France); Montaigne, F. [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506 Vandoeuvre les Nancy (France); Bibyk, V.V. [Sumy State University, 2, Rimskogo-Korsakova Str., 40007 Sumy (Ukraine); Andrieu, S. [Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, 54506 Vandoeuvre les Nancy (France)

    2015-12-15

    Interplay between voltage-induced magnetic anisotropy transition and voltage-induced atomic diffusion is studied in epitaxial V/Fe (0.7 nm)/ MgO/ Fe(5 nm)/Co/Au magnetic tunnel junction where thin Fe soft electrode has in-plane or out-of-plane anisotropy depending on the sign of the bias voltage. We investigate the origin of the slow resistance variation occurring when switching bias voltage in opposite polarity. We demonstrate that the time to reach resistance stability after voltage switching is reduced when increasing the voltage amplitude or the temperature. A single energy barrier of about 0.2 eV height is deduced from temperature dependence. Finally, we demonstrate that the resistance change is not correlated to a change in soft electrode anisotropy. This conclusion contrasts with observations recently reported on analogous systems. - Highlights: • Voltage-induced time dependence of resistance is studied in epitaxial Fe/MgO/Fe. • Resistance change is not related to the bottom Fe/MgO interface. • The effect is thermally activated with an energy barrier of the order of 0.2 eV height.

  14. Characterization of Multicrystalline Silicon Modules with System Bias Voltage Applied in Damp Heat

    Energy Technology Data Exchange (ETDEWEB)

    Hacke, P.; Kempe, M.; Terwilliger, K.; Glick, S.; Call, N.; Johnston, S.; Kurtz, S.

    2011-07-01

    As it is considered economically favorable to serially connect modules to build arrays with high system voltage, it is necessary to explore potential long-term degradation mechanisms the modules may incur under such electrical potential. We performed accelerated lifetime testing of multicrystalline silicon PV modules in 85 degrees C/ 85% relative humidity and 45 degrees C/ 30% relative humidity while placing the active layer in either positive or negative 600 V bias with respect to the grounded module frame. Negative bias applied to the active layer in some cases leads to more rapid and catastrophic module power degradation. This is associated with significant shunting of individual cells as indicated by electroluminescence, thermal imaging, and I-V curves. Mass spectroscopy results support ion migration as one of the causes. Electrolytic corrosion is seen occurring with the silicon nitride antireflective coating and silver gridlines, and there is ionic transport of metallization at the encapsulant interface observed with damp heat and applied bias. Leakage current and module degradation is found to be highly dependent upon the module construction, with factors such as encapsulant and front glass resistivity affecting performance. Measured leakage currents range from about the same seen in published reports of modules deployed in Florida (USA) and is accelerated to up to 100 times higher in the environmental chamber testing.

  15. Effect of applied dc bias voltage on composition, chemical bonding and mechanical properties of carbon nitride films prepared by PECVD

    Institute of Scientific and Technical Information of China (English)

    LI Hong-xuan; XU Tao; HAO Jun-ying; CHEN Jian-min; ZHOU Hui-di; XUE Qun-ji; LIU Hui-wen

    2004-01-01

    Carbon nitride films were deposited on Si (100) substrates using plasma-enhanced chemical vapor deposition (PECVD) technique from CH4 and N2 at different applied dc bias voltage. The microstructure, composition and chemical bonding of the resulting films were characterized by Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The mechanical properties such as hardness and elastic modulus of the films were evaluated using nano-indentation. As the results, the Raman spectra, showing the G and D bands, indicate the amorphous structure of the films. XPS and FTIR measurements demonstrate the existence of various carbon-nitride bonds in the films and the hydrogenation of carbon nitride phase. The composition ratio of N to C, the nano-hardness and the elastic modulus of the carbon nitride films increase with increasing dc bias voltage and reach the maximums at a dc bias voltage of 300 V, then they decrease with further increase of the dc bias voltage. Moreover, the XRD analyses indicate that the carbon nitride film contains some polycrystalline C3N4 phase embedded in the amorphous matrix at optimized deposition condition of dc bias voltage of 300 V.

  16. Biased low differential input impedance current receiver/converter device and method for low noise readout from voltage-controlled detectors

    Science.gov (United States)

    Degtiarenko, Pavel V.; Popov, Vladimir E.

    2011-03-22

    A first stage electronic system for receiving charge or current from voltage-controlled sensors or detectors that includes a low input impedance current receiver/converter device (for example, a transimpedance amplifier), which is directly coupled to the sensor output, a source of bias voltage, and the device's power supply (or supplies), which use the biased voltage point as a baseline.

  17. Correlation between Barrier Width, Barrier Height, and DC Bias Voltage Dependences on the Magnetoresistance Ratio in Ir-Mn Exchange Biased Single and Double Tunnel Junctions

    Science.gov (United States)

    Saito, Yoshiaki; Amano, Minoru; Nakajima, Kentaro; Takahashi, Shigeki; Sagoi, Masayuki; Inomata, Koichiro

    2000-10-01

    Dual spin-valve-type double tunnel junctions (DTJs) of Ir-Mn/CoFe/AlOx/Co90Fe10/AlOx/CoFe/Ir-Mn and spin-valve-type single tunnel junctions (STJs) of Ir-Mn/CoFe/AlOx/CoFe/Ni-Fe were fabricated using an ultrahigh vacuum sputtering system, conventional photolithography and ion-beam milling. The STJs could be fabricated with various barrier heights by changing the oxidization conditions during deposition and changing the annealing temperature after deposition, while the AlOx layer thickness remained unchanged. There was a correlation between barrier width, height estimated using Simmons’ expressions, and dc bias voltage dependence on the MR ratio. The VB dependence on the tunneling magnetoresistance (TMR) ratio was mainly related to the barrier width, and the decrease in the TMR ratio with increasing bias voltage is well explained, taking into account the spin-independent two-step tunneling via defect states in the barrier, as a main mechanism, at room temperature. Under optimized oxidization and annealing conditions, the maximum TMR ratio at a low bias voltage, and the dc bias voltage value at which the TMR ratio decreases in value by half (V1/2) were 42.4% and 952 mV in DTJs, and 49.0% and 425 mV in STJs, respectively.

  18. Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

    Science.gov (United States)

    Hernández-Rosales, E.; Cedeño, E.; Hernandez-Wong, J.; Rojas-Trigos, J. B.; Marin, E.; Gandra, F. C. G.; Mansanares, A. M.

    2016-07-01

    In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

  19. Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

    Energy Technology Data Exchange (ETDEWEB)

    Hernández-Rosales, E.; Cedeño, E. [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil); Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Hernandez-Wong, J. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); CONACYT, México, DF, México (Mexico); Rojas-Trigos, J. B.; Marin, E. [Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Legaria 694, Colonia Irrigación, CP 11500, México, DF (Mexico); Gandra, F. C. G.; Mansanares, A. M., E-mail: manoel@ifi.unicamp.br [Gleb Wataghin Physics Institute, University of Campinas - Unicamp, 13083-859 Campinas, SP (Brazil)

    2016-07-25

    In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

  20. Tuning the Effective Anisotropy in a Voltage-Susceptible Exchange-Bias Heterosystem

    Science.gov (United States)

    Echtenkamp, Will; Street, Mike; Mahmood, Ather; Binek, Christian

    2017-03-01

    Voltage- and temperature-tuned ferromagnetic hysteresis is investigated by a superconducting quantum-interference device and Kerr magnetometry in a thin-film heterostructure of a perpendicular anisotropic Co/Pd ferromagnet exchange coupled to the magnetoelectric antiferromagnet Cr2O3 . An abrupt disappearance of exchange bias with a simultaneous more than twofold increase in coercivity is observed and interpreted as a competition between the effective anisotropy of Cr2O3 and the exchange-coupling energy between boundary magnetization and the adjacent ferromagnet. The effective anisotropy energy is given by the intrinsic anisotropy energy density multiplied by the effective volume separated from the bulk through a horizontal antiferromagnetic domain boundary. Kerr measurements show that the anisotropy of the interfacial Cr2O3 can be tuned isothermally and in the absence of an external magnetic field by application of an electric field. A generalized Meiklejohn-Bean model accounts for the change in exchange bias and coercivity as well as the asymmetric evolution of the hysteresis loop. In support of this model, the reversal of the boundary magnetization is experimentally confirmed as a contribution to the magnetic hysteresis loop.

  1. Single-artificial-atom lasing using a voltage-biased superconducting charge qubit

    Energy Technology Data Exchange (ETDEWEB)

    Ashhab, S; Johansson, J R; Zagoskin, A M; Nori, Franco [Frontier Research System, Institute of Physical and Chemical Research (RIKEN), Wako-shi, Saitama 351-0198 (Japan)], E-mail: ashhab@riken.jp

    2009-02-15

    We consider a system composed of a single artificial atom coupled to a cavity mode. The artificial atom is biased such that the most dominant relaxation process in the system takes the atom from its ground state to its excited state, thus ensuring population inversion. A recent experimental manifestation of this situation was achieved using a voltage-biased superconducting charge qubit. Even under the condition of 'inverted relaxation', lasing action can be suppressed if the 'relaxation' rate is larger than a certain threshold value. Using simple transition-rate arguments and a semiclassical calculation, we derive analytic expressions for the lasing suppression condition and the state of the cavity in both the lasing and suppressed-lasing regimes. The results of numerical calculations agree very well with the analytically derived results. We start by analyzing a simplified two-level-atom model, and we then analyze a three-level-atom model that should describe accurately the recently realized superconducting artificial-atom laser.

  2. Influence of Negative Bias Voltage on the Mechanical and Tribological Properties of MoS2/Zr Composite Films

    Institute of Scientific and Technical Information of China (English)

    SONG Wenlong; DENG Jianxin; YAN Pei; WU Ze; ZHANG Hui; ZHAO dun; AI Xing

    2011-01-01

    MoS2/Zr composite films were deposited on the cemented carbide YT 14 (WC+14%TiC+6%Co)by medium-frequency magnetron sputtered and coupled with multi-arc ion plated techniques. The influence of negative bias voltage on the composite film properties, including adhesion strength, micro-hardness, thickness and tribological properties were investigated. The results showed that proper negative bias voltage could significantly improve the mechanical and tribological properties of composite films. The effects of negative bias voltage on film properties were also put forward. The optimal negative bias voltage was -200 V under this experiment conditions. The obtained composite films were dense, the adhesion strength was about 60 N, the thickness was about 2.4 μm, and the micro-hardness was about 9.0 GPa. The friction coefficient and wear rate was 0.12 and 2. 1 x 10-7 cm/3N·m respectively after 60 m sliding operation against hardened steel under a load of 20 N and a sliding speed of 200 rev · min 1.

  3. 30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables; minimum design... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing cables; minimum design requirements. (a) High-voltage trailing cables used in resistance grounded systems shall...

  4. Low voltage logic circuits exploiting gate level dynamic body biasing in 28 nm UTBB FD-SOI

    Science.gov (United States)

    Taco, Ramiro; Levi, Itamar; Lanuzza, Marco; Fish, Alexander

    2016-03-01

    In this paper, the recently proposed gate level body bias (GLBB) technique is evaluated for low voltage logic design in state-of-the-art 28 nm ultra-thin body and box (UTBB) fully-depleted silicon-on-insulator (FD-SOI) technology. The inherent benefits of the low-granularity body-bias control, provided by the GLBB approach, are emphasized by the efficiency of forward body bias (FBB) in the FD-SOI technology. In addition, the possibility to integrate PMOS and NMOS devices into a single common well configuration allows significant area reduction, as compared to an equivalent triple well implementation. Some arithmetic circuits were designed using GLBB approach and compared to their conventional CMOS and DTMOS counterparts under different running conditions at low voltage regime. Simulation results shows that, for 300 mV of supply voltage, a 4 × 4-bit GLBB Baugh Wooley multiplier allows performance improvement of about 30% and area reduction of about 35%, while maintaining low energy consumption as compared to the conventional CMOS ⧹ DTMOS solutions. Performance and energy benefits are maintained over a wide range of process-voltage-temperature (PVT) variations.

  5. Substrate bias voltage and deposition temperature dependence on properties of rf-magnetron sputtered titanium films on silicon (100)

    Indian Academy of Sciences (India)

    B Geetha Priyadarshini; Shampa Aich; Madhusudan Chakraborty

    2014-12-01

    Thin films or a coating of any sort prior to its application into real world has to be studied for the dependence of process variables on their structural and functional properties. One such study based on the influence of substrate conditions viz. substrate-bias voltage and substrate temperature on the structural and morphological properties, could be of great interest as far as Ti thin films are concerned. From X-ray texture pole figure and electron microscopy analysis, it was found that substrate bias voltage strongly influence preferential orientation and morphology of Ti films grown on Si (100) substrate. Deposition at higher substrate temperature causes the film to react with Si forming silicides at the film/Si substrate interface. Ti film undergoes a microstructural transition from hexagonal plate-like to round-shaped grains as the substrate temperature was raised from 300 to 50 °C during film deposition.

  6. Influence of bias voltage on structural and optical properties of TiN{sub x} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Omveer, E-mail: poonia.omveer@gmail.com [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Dahiya, Raj P. [Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi – 110016 (India); Deenbandhu Chhotu Ram University of Science and Technology, Murthal – 131039 (India); Malik, Hitendra K.; Kumar, Parmod [Department of Physics, Indian Institute of Technology Delhi, New Delhi – 110016 (India)

    2015-08-28

    In the present work, Ti thin films were deposited on Si substrate using DC sputtering technique. Indigenous hot cathode arc discharge plasma system was used for nitriding over these samples, where the plasma parameters and work piece can be controlled independently. A mixture of H{sub 2} and N{sub 2} gases (in the ratio of 80:20) was supplied into the plasma chamber. The effect of bias voltage on the crystal structure, morphology and optical properties was investigated by employing various physical techniques such as X-ray Diffraction, Atomic Force Microscopy and UV-Vis spectrometry. It was found that bias voltage affects largely the crystal structure and band gap which in turn is responsible for the modifications in optical properties of the deposited films.

  7. Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”

    Energy Technology Data Exchange (ETDEWEB)

    Whyte, J. R.; McQuaid, R. G. P.; Einsle, J. F.; Gregg, J. M., E-mail: m.gregg@qub.ac.uk [Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen' s University Belfast, University Road, Belfast BT7 1NN (United Kingdom); Ashcroft, C. M. [Centre for Nanostructured Media (CNM), School of Maths and Physics, Queen' s University Belfast, University Road, Belfast BT7 1NN (United Kingdom); Department of Physics, Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Canalias, C. [Department of Applied Physics, Royal Institute of Technology, Roslagstullsbacken 21, 10691 Stockholm (Sweden); Gruverman, A. [Department of Physics and Astronomy, University of Nebraska Lincoln, Nebraska 68588–0299 (United States)

    2014-08-14

    Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO{sub 4} (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised “hot-spots,” caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future.

  8. Effect of bias voltage on TiAlSiN nanocomposite coatings deposited by HiPIMS

    Science.gov (United States)

    Ma, Quansheng; Li, Liuhe; Xu, Ye; Gu, Jiabin; Wang, Lei; Xu, Yi

    2017-01-01

    TiAlSiN nanocomposite coatings were deposited onto cemented carbide (WC-10 wt.%, Co) substrates by high power impulse magnetron sputtering (HiPIMS). The effect of substrate bias voltage on plasma discharge characterization of HiPIMS, element concentration, deposition rate, microstructure, surface/cross-sectional morphology, hardness and adhesion strength of coatings were studied. Compared with those deposited with direct current magnetic sputtering (DCMS), HiPIMS-deposited TiAlSiN coatings show improvements in some properties, including the surface roughness, the grain size, the hardness and adhesion strength, but a decrease in the deposition rate. When the bias voltage increases, the discharge current rose up from 118A to 165A. HiPIMS-deposited TiAlSiN coatings show a shift of the preferred crystallographic orientation from (220) to (200) and decreases in surface roughness from 14.1 nm down to 7.4 nm and grain size from 10.5 nm to 7.4 nm. Meanwhile, a change in crystal morphology from columnar to equiaxial and a grain refinement, as well as an increase of hardness from 30 GPa up to 42 GPa of those TiAlSiN coatings were observed with the increasing bias voltage and a decrease in adhesion strength from HF2 to HF5 of those coatings were revealed by indentation adhesion test.

  9. The effect of gas mixing and biased disc voltage on the preglow transient of electron cyclotron resonance ion source

    Energy Technology Data Exchange (ETDEWEB)

    Tarvainen, O.; Toivanen, V.; Komppula, J.; Kalvas, T.; Koivisto, H. [Department of Physics, University of Jyvaeskylae, Jyvaeskylae 40500 (Finland)

    2012-02-15

    The effect of gas mixing and biased disc voltage on the preglow of electron cyclotron resonance ion source plasma has been studied with the AECR-U type 14 GHz ion source. It was found that gas mixing has a significant effect on the preglow. The extracted transient beam currents and efficiency of the heavier species increase, while the currents and efficiency of the lighter species decrease when gas mixing is applied. The effect of the biased disc was found to be pronounced in continuous operation mode in comparison to preglow. The data provide information on the time scales of the plasma processes explaining the effects of gas mixing and biased disc. The results also have implications on production of radioactive ion beams in preglow mode for the proposed Beta Beam neutrino factory.

  10. Requirement of ultra-high voltage GIS arrester to voltage gradient of metal-oxide varistor

    Institute of Scientific and Technical Information of China (English)

    HE JinLiang; HU Jun; MENG BoWen; ZHANG Bo; ZHU Bin; CHEN ShuiMing; ZENG Rong

    2009-01-01

    The surge arrestor with excellent protection characteristics would decrease the overvoltage level ap-plied on the power apparatus to reduce their insulation levels and manufacturing bottleneck. The ar-restor for the 1000-kV ultra-high voltage ac power transmission system is designed as tank-type structure. The field-circuit combination numerical method combining the three-dimensional finite ele-ment method with circuit is proposed to analyze the potential distribution of GIS arrester. By comparing several design schemes, the most effective method to improve the potential distribution along the varistor column is to increase the voltage gradient of the ZnO varistor. Synthesizing several influential factors, the suitable voltage gradient of ZnO varistor should be controlled to 435 V/mm, and the re-sulted nonuniform degree of the potential distribution along the varistor column inside the GIS arrestor would be controlled smaller than 10%. The result in this paper provides the fundamental technical in-dex for the study of the high voltage gradient ZnO varistors.

  11. Requirement of ultra-high voltage GIS arrester to voltage gradient of metal-oxide varistor

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The surge arrester with excellent protection characteristics would decrease the overvoltage level ap- plied on the power apparatus to reduce their insulation levels and manufacturing bottleneck. The arrester for the 1000-kV ultra-high voltage ac power transmission system is designed as tank-type structure. The field-circuit combination numerical method combining the three-dimensional finite element method with circuit is proposed to analyze the potential distribution of GIS arrester. By comparing several design schemes, the most effective method to improve the potential distribution along the varistor column is to increase the voltage gradient of the ZnO varistor. Synthesizing several influential factors, the suitable voltage gradient of ZnO varistor should be controlled to 435 V/mm, and the resulted nonuniform degree of the potential distribution along the varistor column inside the GIS arrester would be controlled smaller than 10%. The result in this paper provides the fundamental technical index for the study of the high voltage gradient ZnO varistors.

  12. Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage

    Directory of Open Access Journals (Sweden)

    Wen-Jeng Ho

    2016-08-01

    Full Text Available This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs and an indium-tin-oxide (ITO electrode with periodic holes (perforations under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

  13. Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage.

    Science.gov (United States)

    Ho, Wen-Jeng; Sue, Ruei-Siang; Lin, Jian-Cheng; Syu, Hong-Jang; Lin, Ching-Fuh

    2016-08-10

    This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electrode with and without In-NPs. The samples were characterized according to optical reflectance, dark current voltage, induced capacitance voltage, external quantum efficiency, and photovoltaic current voltage. Our results indicate that induced capacitance voltage and photovoltaic current voltage both depend on bias voltage, regardless of the type of ITO electrode. Under a bias voltage of 4.0 V, MOS cells with perforated ITO and plain ITO, respectively, presented conversion efficiencies of 17.53% and 15.80%. Under a bias voltage of 4.0 V, the inclusion of In-NPs increased the efficiency of cells with perforated ITO and plain ITO to 17.80% and 16.87%, respectively.

  14. Dependence of the electrical and optical properties on the bias voltage for ZnO:Al films deposited by r.f. magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jae-Hyeong [School of Electronics and Information Engineering, Kunsan National University, Kunsan (Korea, Republic of)], E-mail: jhyi@kunsan.ac.kr; Song, Jun-Tae [School of Information and Communication Engineering, Sungkyunkwan University, Suwon (Korea, Republic of)

    2008-02-15

    Aluminum-doped zinc oxide (ZnO:Al) thin films were deposited on glass, polycarbonate (PC), and polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The substrate dc bias voltage varied from 0 V to 50 V. Structural, electrical and optical properties of the films were investigated. The deposition rate of ZnO:Al films on glass substrate initially increased with the bias voltage, and then decreased with further increasing bias voltage. It was found that the best films on glass substrate with a low as 6.2 x 10{sup -4} {omega} cm and an average transmittance over 80% at the wavelength range of 500-900 nm can be obtained by applying the bias voltage of 30 V. The properties of the films deposited on polymer substrate, such as PC and PET, have a similar tendency, with slightly inferior values to those on glass substrate.

  15. Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Jinlong Jiang

    2014-01-01

    Full Text Available The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3 carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2 ratio of the films.

  16. Bias voltage effects on tunneling magnetoresistance in Fe/MgAl2O4/Fe (001 ) junctions: Comparative study with Fe/MgO/Fe(001) junctions

    Science.gov (United States)

    Masuda, Keisuke; Miura, Yoshio

    2017-08-01

    We investigate bias voltage effects on the spin-dependent transport properties of Fe/MgAl 2O 4 /Fe(001) magnetic tunneling junctions (MTJs) by comparing them with those of Fe/MgO/Fe(001) MTJs. By means of the nonequilibrium Green's function method and the density functional theory, we calculate bias voltage dependencies of magnetoresistance (MR) ratios in both the MTJs. We find that in both the MTJs, the MR ratio decreases as the bias voltage increases and finally vanishes at a critical bias voltage Vc. We also find that the critical bias voltage Vc of the MgAl 2O 4 -based MTJ is clearly larger than that of the MgO-based MTJ. Since the in-plane lattice constant of the Fe/MgAl 2O 4 /Fe(001) supercell is twice that of the Fe/MgO/Fe(001) one, the Fe electrodes in the MgAl 2O 4 -based MTJs have an identical band structure to that obtained by folding the Fe band structure of the MgO-based MTJs in the Brillouin zone of the in-plane wave vector. We show that such a difference in the Fe band structure is the origin of the difference in the critical bias voltage Vc between the MgAl 2O 4 - and MgO-based MTJs.

  17. Low frequency voltage noise in current biased HTCS thin films. [BiSrCaCuO

    Energy Technology Data Exchange (ETDEWEB)

    Gierlowski, P. (Inst. Fizyki PAN, Warszawa (Poland)); Jung, G. (Inst. Fizyki PAN, Warszawa (Poland) Physics Dept., Ben Gurion Univ. of the Negev, Beer-Sheva (Israel) Dipt. di Fisica, Univ. di Salerno (Italy)); Kula, W. (Inst. Fizyki PAN, Warszawa (Poland) Electrical Engineering Dept., Univ. of Rochester, NY (United States)); Lewandowski, S.J. (Inst. Fizyki PAN, Warszawa (Poland)); Savo, B. (Dipt. di Fisica, Univ. di Salerno (Italy)); Sobolewski, R. (Inst. Fizyki PAN, Warszawa (Poland) Electrical Engineering Dept., Univ. of Rochester, NY (United States)); Tebano, A. (Dipt. di Ingegneria Meccanica, Univ. di Roma Tor-Vergata (Italy)); Vecchione, A. (Physics Dept., Ben Gurion Univ. of the Negev, Beer-Sheva (Israel) Dipt. di Fisica, Univ. di Salerno (Italy))

    1994-02-01

    Pronounced changes in low-frequency noise power spectra have been observed, close to the transition temperature, in current biased high-T[sub c] superconducting thin films. Generally, the spectra scale as 1/f[sup [alpha

  18. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under positive gate bias stress

    NARCIS (Netherlands)

    Niang, K.M.; Barquinha, P.M.C.; Martins, R.F.P.; Cobb, B.; Powell, M.J.; Flewitt, A.J.

    2016-01-01

    Thin film transistors (TFTs) employing an amorphous indium gallium zinc oxide (a-IGZO) channel layer exhibit a positive shift in the threshold voltage under the application of positive gate bias stress (PBS). The time and temperature dependence of the threshold voltage shift was measured and analyse

  19. The effect of the dc bias voltage on the x-ray bremsstrahlung and beam intensities of medium and highly charged ions of argon.

    Science.gov (United States)

    Rodrigues, G; Lakshmy, P S; Baskaran, R; Kanjilal, D; Roy, A

    2010-02-01

    X-ray bremsstrahlung measurements from the 18 GHz High Temperature Superconducting Electron Cyclotron Resonance Ion Source, Pantechnik-Delhi Ion Source were measured as a function of negative dc bias voltage, keeping all other source operating parameters fixed and the extraction voltage in the off condition. The optimization of medium and highly charged ions of argon with similar source operating parameters is described. It is observed that the high temperature component of the electron is altered significantly with the help of bias voltage, and the electron population has to be maximized for obtaining higher current.

  20. Improvement in nano-hardness and corrosion resistance of low carbon steel by plasma nitriding with negative DC bias voltage

    Science.gov (United States)

    Alim, Mohamed Mounes; Saoula, Nadia; Tadjine, Rabah; Hadj-Larbi, Fayçal; Keffous, Aissa; Kechouane, Mohamed

    2016-10-01

    In this work, we study the effect of plasma nitriding on nano-hardness and corrosion resistance of low carbon steel samples. The plasma was generated through a radio-frequency inductively coupled plasma source. The substrate temperature increased (by the self-induced heating mechanism) with the treatment time for increasing negative bias voltages. X-rays diffraction analysis revealed the formation of nitride phases (ɛ-Fe2-3N and γ'-Fe4N) in the compound layer of the treated samples. A phase transition occurred from 3.5 kV to 4.0 kV and was accompanied by an increase in the volume fraction of the γ'-Fe4N phase and a decrease in that of the ɛ-Fe2-3N phase. Auger electron spectroscopy revealed a deep diffusion of the implanted nitrogen beyond 320 nm. The nano-hardness increased by ~400% for the nitrogen-implanted samples compared to the untreated state, the nitride phases are believed to participate to the hardening. Potentiodynamic polarization measurements revealed that the plasma nitriding has improved the corrosion resistance behavior of the material. When compared to the untreated state, the sample processed at 4.0 kV exhibits a shift of +500 mV and a reduction to 3% in its corrosion current. These results were obtained for relatively low bias voltages and short treatment time (2 h).

  1. Current-oscillator correlation and Fano factor spectrum of quantum shuttle with finite bias voltage and temperature.

    Science.gov (United States)

    Lai, Wenxi; Cao, Yunshan; Ma, Zhongshui

    2012-05-01

    A general master equation is derived to describe an electromechanical single-dot transistor in the Coulomb blockade regime. In the equation, Fermi distribution functions in the two leads are taken into account, which allows one to study the system as a function of bias voltage and temperature of the leads. Furthermore, we treat the coherent interaction mechanism between electron tunneling events and the dynamics of excited vibrational modes. Stationary solutions of the equation are numerically calculated. We show that current through the oscillating island at low temperature appears to have step-like characteristics as a function of the bias voltage and the steps depend on the mean phonon number of the oscillator. At higher temperatures the current steps would disappear and this event is accompanied by the emergence of thermal noise of the charge transfer. When the system is mainly in the ground state, the zero frequency Fano factor of current manifests sub-Poissonian noise and when the system is partially driven into its excited states it exhibits super-Poissonian noise. The difference in the current noise would almost be removed for the situation in which the dissipation rate of the oscillator is much larger than the bare tunneling rates of electrons.

  2. Monte Carlo simulations of microchannel plate detectors I: steady-state voltage bias results

    Energy Technology Data Exchange (ETDEWEB)

    Ming Wu, Craig Kruschwitz, Dane Morgan, Jiaming Morgan

    2008-07-01

    X-ray detectors based on straight-channel microchannel plates (MCPs) are a powerful diagnostic tool for two-dimensional, time-resolved imaging and timeresolved x-ray spectroscopy in the fields of laser-driven inertial confinement fusion and fast z-pinch experiments. Understanding the behavior of microchannel plates as used in such detectors is critical to understanding the data obtained. The subject of this paper is a Monte Carlo computer code we have developed to simulate the electron cascade in a microchannel plate under a static applied voltage. Also included in the simulation is elastic reflection of low-energy electrons from the channel wall, which is important at lower voltages. When model results were compared to measured microchannel plate sensitivities, good agreement was found. Spatial resolution simulations of MCP-based detectors were also presented and found to agree with experimental measurements.

  3. Dynamical Localization in a Two-Electron Quantum Dot Molecule Biased by a dc Voltage

    Institute of Scientific and Technical Information of China (English)

    王立民; 段素青; 赵宪庚; 刘承师; 马本堃

    2003-01-01

    We study the dynamics of two interacting electrons in a coupled-quantum-dot system with a time-dependent external electric field. The numerical results of the two-particle states reveal that the dynamical localization still exists under appropriate dc and ac voltage amplitudes. Such localization is different from the stationary localization phenomenon. Our conclusion is instructive for the field of quantum function devices.

  4. The Effect of Bias Voltage and Gas Pressure on the Structure, Adhesion and Wear Behavior of Diamond Like Carbon (DLC Coatings With Si Interlayers

    Directory of Open Access Journals (Sweden)

    Liam Ward

    2014-04-01

    Full Text Available In this study diamond like carbon (DLC coatings with Si interlayers were deposited on 316L stainless steel with varying gas pressure and substrate bias voltage using plasma enhanced chemical vapor deposition (PECVD technology. Coating and interlayer thickness values were determined using X-ray photoelectron spectroscopy (XPS which also revealed the presence of a gradient layer at the coating substrate interface. Coatings were evaluated in terms of the hardness, elastic modulus, wear behavior and adhesion. Deposition rate generally increased with increasing bias voltage and increasing gas pressure. At low working gas pressures, hardness and modulus of elasticity increased with increasing bias voltage. Reduced hardness and modulus of elasticity were observed at higher gas pressures. Increased adhesion was generally observed at lower bias voltages and higher gas pressures. All DLC coatings significantly improved the overall wear resistance of the base material. Lower wear rates were observed for coatings deposited with lower bias voltages. For coatings that showed wear tracks considerably deeper than the coating thickness but without spallation, the wear behavior was largely attributed to deformation of both the coating and substrate with some cracks at the wear track edges. This suggests that coatings deposited under certain conditions can exhibit ultra high flexible properties.

  5. Bias voltage dependence of molecular orientation of dialkyl ketone and fatty acid alkyl ester at the liquid–graphite interface

    Energy Technology Data Exchange (ETDEWEB)

    Hibino, Masahiro, E-mail: hibino@mmm.muroran-it.ac.jp [Department of Applied Sciences, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Tsuchiya, Hiroshi [Department of Applied Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan)

    2014-10-30

    Graphical abstract: - Highlights: • Self-assembled monolayers (SAMs) of 18-pentatriacontanone (as ketone) and stearyl stearate (as ester) were formed on a graphite surface at the liquid–solid interface. • Orientations of the molecules in SAMs on the substrate were studied by scanning tunneling microscopy. • A perpendicular carbon skeleton-plane orientation with the CO pointing up on the surface is favorable for a substrate with negative charge and vice versa. - Abstract: Molecular orientations of self-assembled 18-pentatriacontanone (as ketone) and stearyl stearate (as ester) monolayers adsorbed on a graphite surface were studied by scanning tunneling microscopy (STM) at the liquid–solid interface. At a positive sample bias, the central areas of the dialkyl ketone and fatty acid alkyl ester molecules in the STM images appeared as two bright regions on both sides of a dim spot and a bright region on one side of a dim spot, whereas at a negative sample bias, the areas appeared dim. This contrast variation indicates that a perpendicular carbon skeleton-plane orientation with the CO pointing down on the surface is favorable for a substrate with positive charge and vice versa because of the greater electronegativity of the oxygen atom. Upon the bias voltage reversal, the delay time for the STM image contrast change in the region was observed on a time scale of minutes. The difference between the delay time lengths for the direction of bias polarity change indicates that the perpendicular configuration with CO pointing up is more stable than that with CO pointing down. These results indicate that the use of an electric field along a direction vertical to the monolayer on the substrate provides control over the orientations of the molecules between two stable states at the liquid–solid interface.

  6. SPEAR-1: An experiment to measure current collection in the ionosphere by high voltage biased conductors

    Science.gov (United States)

    Raitt, W. John; Myers, Neil B.; Roberts, Jon A.; Thompson, D. C.

    1990-01-01

    An experiment is described in which a high electrical potential difference, up to 45 kV, was applied between deployed conducting spheres and a sounding rocket in the ionosphere. Measurements were made of the applied voltage and the resulting currents for each of 24 applications of different high potentials. In addition, diagnostic measurements of optical emissions in the vicinity of the spheres, energetic particle flow to the sounding rocket, dc electric field and wave data were made. The ambient plasma and neutral environments were measured by a Langmuir probe and a cold cathode neutral ionization gauge, respectively. The payload is described and examples of the measured current and voltage characteristics are presented. The characteristics of the measured currents are discussed in terms of the diagnostic measurements and the in-situ measurements of the vehicle environment. In general, it was found that the currents observed were at a level typical of magnetically limited currents from the ionospheric plasma for potentials less than 12 kV, and slightly higher for larger potentials. However, due to the failure to expose the plasma contactor, the vehicle sheath modified the sphere sheaths and made comparisons with the analytic models of Langmuir-Blodgett and Parker-Murphy less meaningful. Examples of localized enhancements of ambient gas density resulting from the operation of the attitude control system thrusters (cold nitrogen) were obtained. Current measurements and optical data indicated localized discharges due to enhanced gas density that reduced the vehicle-ionosphere impedance.

  7. Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Kugler, Zoe, E-mail: zkugler@physik.uni-bielefeld.d [Bielefeld University, Department of Physics, Universitaetsstr. 25, 33615 Bielefeld (Germany); Drewello, Volker; Schaefers, Markus; Schmalhorst, Jan; Reiss, Guenter; Thomas, Andy [Bielefeld University, Department of Physics, Universitaetsstr. 25, 33615 Bielefeld (Germany)

    2011-01-15

    Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions (MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to characterize the electrodes. The effects of the Co layer thickness in the Co/Pd bilayers, the annealing temperature, the Co thickness at the MgO barrier interface, and the number of bilayers on the tunneling magneto resistance (TMR) effect are investigated. TMR-ratios of about 11% at room temperature and 18.5% at 13 K are measured and two well-defined switching fields are observed. The results are compared to measurements of MTJs with Co-Fe-B electrodes and in-plane anisotropy.

  8. Experimental investigation of dielectric barrier discharge plasma actuators driven by repetitive high-voltage nanosecond pulses with dc or low frequency sinusoidal bias

    Science.gov (United States)

    Opaits, Dmitry F.; Likhanskii, Alexandre V.; Neretti, Gabriele; Zaidi, Sohail; Shneider, Mikhail N.; Miles, Richard B.; Macheret, Sergey O.

    2008-08-01

    Experimental studies were conducted of a flow induced in an initially quiescent room air by a single asymmetric dielectric barrier discharge driven by voltage waveforms consisting of repetitive nanosecond high-voltage pulses superimposed on dc or alternating sinusoidal or square-wave bias voltage. To characterize the pulses and to optimize their matching to the plasma, a numerical code for short pulse calculations with an arbitrary impedance load was developed. A new approach for nonintrusive diagnostics of plasma actuator induced flows in quiescent gas was proposed, consisting of three elements coupled together: the schlieren technique, burst mode of plasma actuator operation, and two-dimensional numerical fluid modeling. The force and heating rate calculated by a plasma model was used as an input to two-dimensional viscous flow solver to predict the time-dependent dielectric barrier discharge induced flow field. This approach allowed us to restore the entire two-dimensional unsteady plasma induced flow pattern as well as characteristics of the plasma induced force. Both the experiments and computations showed the same vortex flow structures induced by the actuator. Parametric studies of the vortices at different bias voltages, pulse polarities, peak pulse voltages, and pulse repetition rates were conducted experimentally. The significance of charge buildup on the dielectric surface was demonstrated. The charge buildup decreases the effective electric field in the plasma and reduces the plasma actuator performance. The accumulated surface charge can be removed by switching the bias polarity, which leads to a newly proposed voltage waveform consisting of high-voltage nanosecond repetitive pulses superimposed on a high-voltage low frequency sinusoidal voltage. Advantages of the new voltage waveform were demonstrated experimentally.

  9. Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect

    Institute of Scientific and Technical Information of China (English)

    Zheng Zhi; Li Wei; Li Ping

    2013-01-01

    A non-depletion floating layer silicon-on-insulator (NFL SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) is proposed and the NFL-assisted modulated field (NFLAMF) principle is investigated in this paper.Based on this principle,the floating layer can pin the potential for modulating bulk field.In particular,the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer (BOX).At variation of back-gate bias,the shielding charges of NFL can alsoeliminate back-gate effects.The simulated results indicate that the breakdown voltage (BV) is increased from 315 V to 558 V compared to the conventional reduced surface field (RESURF) SOI (CSOI) LDMOS,yielding a 77% improvement.Furthermore,due to the field shielding effect of the NFL,the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device.

  10. Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

    Energy Technology Data Exchange (ETDEWEB)

    Kavitha, A.; Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindugal-624622 (India); Subramanian, N. Sankara [Department of Physics, Thiagarajar College of Engineering, Madurai -625015, Tamilnadu (India); Loganathan, S. [Ion Plating, Titan Industries Ltd., Hosur - 635126, Tamilnadu (India)

    2014-04-24

    Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

  11. THE EFFECTS OF PULSE BIAS VOLTAGE AND N2 PARTIAL PRESSURE ON TiAIN FILMS OF ARC ION PLATING (AIP)

    Institute of Scientific and Technical Information of China (English)

    M.S. Li; S.L. Zhu; Fuhui Wang; C. Sun; L.S. Wen

    2001-01-01

    Owing to the characteristics of arc ion plating(AIP) technique, the structure and com-position of TiAlN films can be tailored by controlling of various parameters such ascompositions of target materials, N2 partial pressure, substrate bias and so on. ln thisstudy, several titanium aluminum nitride films were deposited on 1Cr11Ni2 W2Mo Vsteel for compressor blade of areo-engine under different d.c pulse bias voltage and ni-trogen partial pressure. The effects of substrate pulse bias and nitrogen partial pressureon the deposition rate, droplet formation, microstruture and elemental component ofthe films were investigated.

  12. Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 C to 500 C

    Science.gov (United States)

    Neudeck, Philip G.; Spry, David J.; Chen, Liangyu

    2015-01-01

    This work reports a theoretical and experimental study of 4H-SiC JFET threshold voltage as a function of substrate body bias, device position on the wafer, and temperature from 25 C (298K) to 500 C (773K). Based on these results, an alternative approach to SPICE circuit simulation of body effect for SiC JFETs is proposed.

  13. Programming Arduino to Control Bias Voltages to Temperature-Depedndent Gamma-ray Detectors aboard TRYAD Mission

    Science.gov (United States)

    Stevons, C. E.; Jenke, P.; Briggs, M. S.

    2016-12-01

    Terrestrial Gamma-ray Flashes (TGFs) are sub-millisecond gamma-ray flashes that are correlated with lightning have been observed with numerous satellites since their discovery in the early 1990s. Although substantial research has been conducted on TGFs, puzzling questions regarding their origin are still left unanswered. Consequently, the Terrestrial RaYs Analysis and Detection (TRYAD) mission is designed to solve many issues about TGFs by measuring the beam profile and orientation of TGFs in low Earth orbit. This project consists of sending two CubeSats into low-Earth orbit where they will independently sample TGF beams. Both of the TRYAD CubeSats will contain a gamma-ray detector composed of lead doped plastic scintillator coupled to silicon photomultiplier (SiPM) arrays. The gain readings of the SiPMs vary with temperature and the bias voltage must be corrected to compensate. Using an Arduino micro-controller, circuitry and software was developed to control the gain in response to the resistance of a thermistor. I will present the difficulties involved with this project along with our solutions.

  14. New Requirements of the Voltage/VAR Function for Smart Inverter in Distributed Generation Control

    Directory of Open Access Journals (Sweden)

    Yun-Su Kim

    2016-11-01

    Full Text Available International Electronical Committee (IEC 61850-90-7 is a part of the IEC 61850 series which specifies the advanced functions and object models for power converter based Distributed Energy Resources (DERs. One of its functions, the Voltage/VAR (V/V control function, is used to enhance the stability and the reliability of the voltage in the distribution system. The conventional V/V function acts mainly for flattening the voltage profile as for a basic grid support function. Currently, other objectives such as the minimization of line loss and the operational costs reduction are coming into the spotlight. In order to attain these objectives, the V/V function and hence the DER units shall actively respond to the change of distribution system conditions. In this paper, the modification of V/V function and new requirements are proposed. To derive new requirements of V/V function, loss minimization is applied to a particle swarm optimization (PSO algorithm where the condition of voltage constraint is considered not to deteriorate the voltage stability of the distribution system.

  15. Low bias stress and reduced operating voltage in SnCl{sub 2}Pc based n-type organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Obaidulla, SK. Md., E-mail: obaidulla20@gmail.com; Goswami, D. K., E-mail: xdipak@gmail.com, E-mail: dipak@phy.iitkgp.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati, Assam 781039 (India); Giri, P. K., E-mail: giri@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati, Assam 781039 (India); Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, Assam 781039 (India)

    2014-05-26

    Vacuum deposited tin (IV) phthalocyanine dichloride (SnCl{sub 2}Pc) field-effect transistors were fabricated on polymethylmethacrylate/aluminum oxide (PMMA/Al{sub 2}O{sub 3}) bilayer gate dielectric, with reduced operating voltage and low contact resistance. The devices with top contact Ag electrodes exhibit excellent n-channel behavior with electron mobility values of 0.01 cm{sup 2}/Vs, low threshold voltages ∼4 V, current on/off ratio ∼10{sup 4} with an operating voltage of 10 V. Bias stress instability effects are investigated during long term operation using thin film devices under vacuum. We find that the amount of bias stress of SnCl{sub 2}Pc based thin film transistor is extremely small with characteristic relaxation time >10{sup 5} s obtained using stretched exponential model. Stressing the SnCl{sub 2}Pc devices by applying 10 V to the gate for half an hour results in a decrease of the source drain current, I{sub DS} of only ∼10% under low vacuum. These devices show highly stable electrical behavior under multiple scans and low threshold voltage instability under electrical dc bias stress (V{sub DS} = V{sub GS} = 10 V, for 2 h) even after 40 days.

  16. Influence of bias voltage on the optical and structural properties of nc-Si:H films grown by layer-by-layer (LBL) deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Tong, Goh Boon, E-mail: boontong77@yahoo.co [Solid State Research Laboratory, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Gani, Siti Meriam Ab.; Muhamad, Muhamad Rasat; Rahman, Saadah Abdul [Solid State Research Laboratory, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2009-07-01

    The effects of applying a positive bias of 25 to 100 V on the optical, structural and photoluminescence (PL) properties of hydrogenated nanocrystalline silicon (nc-Si:H) films produced by layer-by-layer (LBL) deposition technique has been studied. Optical characterization of the films has been obtained from UV-VIS-NIR spectroscopy measurements. Structural characterization has been performed using X-ray diffraction, micro-Raman spectroscopy and field emission scanning electron microscope (FESEM). PL spectroscopy technique has been used to investigate the PL properties of the films. In general, the films formed shows a mixed phase of silicon (Si) nanocrystallites embedded within an amorphous phase of the Si matrix. The crystalline volume fraction and grain size of the Si nanocrystallites have been shown to be strongly dependent on the applied bias voltage. High applied bias voltage enhances the growth rate of the films but reduces the refractive index and the optical energy gap of the films. Higher crystalline volume fraction of the films prepared at low bias voltages exhibits room temperature PL at around 1.8 eV (700 nm).

  17. Influence of deposition temperature and bias voltage on the crystalline phase of Er{sub 2}O{sub 3} thin films deposited by filtered cathodic arc

    Energy Technology Data Exchange (ETDEWEB)

    Adelhelm, Christoph, E-mail: christoph.adelhelm@ipp.mpg.de [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Pickert, Thomas [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Koch, Freimut, E-mail: freimut.koch@ipp.mpg.de [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Balden, Martin; Jahn, Stephan [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Rinke, Monika [Forschungszentrum Karlsruhe, Institute for Materials Research I, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Maier, Hans [Max-Planck-Institut fuer Plasmaphysik, Materials Research, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany)

    2011-10-01

    Er{sub 2}O{sub 3} thin films on Eurofer steel substrates were produced by a filtered cathodic arc device, varying the substrate temperature (RT - 700 deg. C) and sample bias (0 to -450 V). The crystallographic phase was analyzed by X-ray diffraction and Raman spectroscopy. Deposition at {>=}600 deg. C without bias lead to solely formation of the cubic Er{sub 2}O{sub 3} phase. Thin films of the uncommon, monoclinic B-phase were prepared with a negative bias voltage of {>=}100 V at RT, and at temperatures {<=}500 deg. C for -250 V bias. The B-phase films exhibit a strongly textured film structure. Residual stress measurements show high compressive stress for B-phase films deposited at RT.

  18. Single- and dual-wavelength photodetectors with MgZnO/ZnO metal-semiconductor-metal structure by varying the bias voltage

    Science.gov (United States)

    Hwang, J. D.; Lin, G. S.

    2016-09-01

    By varying the bias voltage of an Mg x Zn1-x O/ZnO metal-semiconductor-metal photodetector (MSM-PDs), the detection wavelength can be modulated from a single to a dual wavelength. A long-wavelength band response is caused by the ZnO absorption and a short-wavelength band response is caused by Mg x Zn1-x O. At a 0 V bias voltage, the photogenerated electrons in ZnO are confined to the Mg x Zn1-x O/ZnO interface, arising from the piezoelectric polarization. The accumulated electrons hop the Mg x Zn1-x O layer through the assistance of defects; however, the photogenerated electrons in Mg x Zn1-x O cannot cross over the large barrier height at the Au/MgZnO interface, resulting in a single-wavelength photodetector with a long-wavelength band (345-400 nm) having a peak wavelength of 370 nm. By increasing the bias voltage to 1-2 V, the barrier height is lowered, enabling the photogenerated electrons in Mg x Zn1-x O to easily cross over the low barrier height, leading to dual-wavelength photodetectors having peak wavelengths of 370 and 340 nm. On further increasing the bias voltage beyond 2 V, the photogenerated electrons in ZnO sink deeply in the hollow at the Mg x Zn1-x O/ZnO interface owing to the large applied voltage. These electrons are effectively confined at the Mg x Zn1-x O/ZnO interface, which retards the tunneling of the photogenerated electrons in ZnO through the Mg x Zn1-x O layer; hence the MSM-PDs revert back to single wavelength photodetectors; however, the detection wavelength is different from that of the MSM-PDs biased at 0 V. Instead of having a long-wavelength band (345-400 nm), the MSM-PDs demonstrate a short-wavelength band (320-345 nm) at a 3 V bias voltage.

  19. Optimizing Design of Breakdown Voltage to Eliminate Back Gate Bias Effect in Silicon-on-Insulator Diode Using Low Doping Buried Layer

    Institute of Scientific and Technical Information of China (English)

    H0 Chi-Hon; LIAO Chen-Nan; CHIEN Feng-Tso; TSAI Yao-Tsung

    2009-01-01

    This work presents the optimal design of a silicon-on-insulator (SOI) diode structure to eliminate the back gate bias effect and to improve breakdown voltage. The SOI structure is characterized by inserting a silicon low doping buried layer (LDBL) between the silicon layer and the buried oxide layer. The LDBL thickness is a key parameter that affects the strong inversion condition of the back MOS capacitor of the new SOI diode. The optimal LDBL thickness in the SOI diode is 2.65μm. The LDBL shielding layer improved the breakdown voltage.

  20. Solid-state fast voltage compensator for pulsed power applications requiring constant AC power consumption

    CERN Document Server

    Magallanes, Francisco Cabaleiro; Viarouge, Philippe; Cros, Jérôme

    2015-01-01

    This paper proposes a novel topological solution for pulsed power converters based on capacitor-discharge topologies, integrating a Fast Voltage Compensator which allows an operation at constant power consumption from the utility grid. This solution has been retained as a possible candidate for the CLIC project under study at CERN, which requires more than a thousand synchronously-operated klystron modulators producing a total pulsed power of almost 40 GW. The proposed Fast Voltage Compensator is integrated in the modulator such that it only has to treat the capacitor charger current and a fraction of the charging voltage, meaning that its dimensioning power and cost are minimized. This topology can be used to improve the AC power quality of any pulsed converters based on capacitor-discharge concept. A prototype has been built and exploited to validate the operating principle and demonstrate the benefits of the proposed solution.

  1. Magnetoresistance and negative differential resistance in Ni/graphene/Ni vertical heterostructures driven by finite bias voltage: a first-principles study

    DEFF Research Database (Denmark)

    Saha, Kamal K.; Blom, Anders; Thygesen, Kristian S.

    2012-01-01

    Using the nonequilibrium Green's function formalism combined with density functional theory, we study finite bias quantum transport in Ni/Grn/Ni vertical heterostructures where n graphene layers are sandwiched between two semi-infinite Ni(111) electrodes. We find that the recently predicted...... differential resistance as the bias voltage is increased from Vb=0 V to Vb≃0.5 V. We confirm that both of these nonequilibrium transport effects hold for different types of bonding of Gr on the Ni(111) surface while maintaining Bernal stacking between individual Gr layers....

  2. Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

    Science.gov (United States)

    Ghaffarzadeh, Khashayar; Nathan, Arokia; Robertson, John; Kim, Sangwook; Jeon, Sanghun; Kim, Changjung; Chung, U.-In; Lee, Je-Hun

    2010-09-01

    Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (ΔVT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths.

  3. CMOS temperature sensor using a resistively degenerated common-source amplifier biased by an adjustable proportional-to-absolute-temperature voltage

    Science.gov (United States)

    Wang, Ruey-Lue; Fu, Chien-Cheng; Yu, Chi; Hao, Yi-Fan; Shi, Jian-Liang; Lin, Chen-Fu; Liao, Hsin-Hao; Tsai, Hann-Huei; Juang, Ying-Zong

    2014-01-01

    A high-linearity CMOS temperature sensor with pulse output is presented. The temperature core is a resistively degenerated common-source amplifier which gate is biased by a proportional-to-absolute-temperature (PTAT) voltage generator. The source resistor is made of polysilicon which resistance has a PTAT characteristic. The current flowing through the resistor exhibits a PTAT characteristic with high linearity of 99.99% at least for a temperature range from 0 to 125 °C. The PTAT voltage generator can be adjusted by a bias voltage Vb and hence the PTAT current can also be adjusted by the Vb. The PTAT current is mirrored to an added current controlled oscillator which output pulse frequencies also exhibit a PTAT characteristic. For the chip using the 0.35 µm process, the plots of measured pulse frequencies against temperature exhibit the sensitivity of 2.30 to 2.24 kHz/°C with linearity of more than 99.99% at the Vb of 1 to 1.2 V.

  4. Effects of Energy Storage Systems Grid Code Requirements on Interface Protection Performances in Low Voltage Networks

    Directory of Open Access Journals (Sweden)

    Fabio Bignucolo

    2017-03-01

    Full Text Available The ever-growing penetration of local generation in distribution networks and the large diffusion of energy storage systems (ESSs foreseen in the near future are bound to affect the effectiveness of interface protection systems (IPSs, with negative impact on the safety of medium voltage (MV and low voltage (LV systems. With the scope of preserving the main network stability, international and national grid connection codes have been updated recently. Consequently, distributed generators (DGs and storage units are increasingly called to provide stabilizing functions according to local voltage and frequency. This can be achieved by suitably controlling the electronic power converters interfacing small-scale generators and storage units to the network. The paper focuses on the regulating functions required to storage units by grid codes currently in force in the European area. Indeed, even if such regulating actions would enable local units in participating to network stability under normal steady-state operating conditions, it is shown through dynamic simulations that they may increase the risk of unintentional islanding occurrence. This means that dangerous operating conditions may arise in LV networks in case dispersed generators and storage systems are present, even if all the end-users are compliant with currently applied connection standards.

  5. Requirements on medium-voltage switchgear for traction power supply; Anforderungen an Mittelspannungsschaltanlagen zur Bahnenergieversorgung

    Energy Technology Data Exchange (ETDEWEB)

    Girbert, K.H.; Loenard, D.; Northe, J. [Balfour Beatty Rail GmbH Power Systems, Offenbach (Germany)

    2003-10-01

    Differing requirements to be met by medium-voltage switchgear in conjunction with historical developments, applicable standards and regulations and customers' conditions of operation were the factors responsible for the use of open-air switchgear in outdoor and air-insulated and gas-insulated equipment in indoor environments. The requirements made today on single-phase equipment and two-phase equipment for feeding autotransformer systems are described. Priority focus in the article is given to 25 kV 50 Hz applications though the information applies to 1 AC 15 kV 16.7 Hz equipment in principle as well. The equipment is compared with that used for d.c. railways and public power supply systems. (orig.)

  6. 负偏压法测试大电压LED器件热阻%Measuring thermal resistance for high voltage LED device and module by applying negative bias voltage

    Institute of Scientific and Technical Information of China (English)

    陈国龙; 雷瑞瑞; 陈焕庭; 陈莹亮; 吕毅军; 高玉琳; 朱丽虹; 陈忠

    2012-01-01

    热阻是衡量LED器件散热性能的重要热学参数.采用外接负偏压恒压源方法,分别使用T3Ster/Teraled热光参数测试仪和NC2991热阻仪对正向电压超过仪器量程的同一型号功率型LED的热阻进行测试,并对两种测试结果的误差进行比较分析讨论.该方法拓展了热阻仪测量范围,使正向电压大于5V的LED器件/模块的热阻测试成为可能.%Thermal resistance is a key parameter on rating the heat dissipating capability of LEDs, so its measurement becomes particularly essential. A thermal resistance measurement method for high voltage LED device and module is provided here, which can measure LED sample with forward voltage larger than 5V by applying negative bias voltage to the T3Ster/Teraled and the NC2991 thermal resistance testers respectively. The results are further compared and discussed and prove to effectively expand the testing range of thermal resistance tester.

  7. Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

    KAUST Repository

    Oh, Se Chung

    2009-10-25

    Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena. © 2009 Macmillan Publishers Limited. All rights reserved.

  8. Simple Floquet-Wannier-Stark-Andreev viewpoint and emergence of low-energy scales in a voltage-biased three-terminal Josephson junction

    Science.gov (United States)

    Mélin, Régis; Caputo, Jean-Guy; Yang, Kang; Douçot, Benoît

    2017-02-01

    A three-terminal Josephson junction consists of three superconductors coupled coherently to a small nonsuperconducting island, such as a diffusive metal, a single or double quantum dot. A specific resonant single quantum dot three-terminal Josephson junction (Sa,Sb,Sc) biased with voltages (V ,-V ,0 ) is considered, but the conclusions hold more generally for resonant semiconducting quantum wire setups. A simple physical picture of the steady state is developed, using Floquet theory. It is shown that the equilibrium Andreev bound states (for V =0 ) evolve into nonequilibrium Floquet-Wannier-Stark-Andreev (FWS-Andreev) ladders of resonances (for V ≠0 ). These resonances acquire a finite width due to multiple Andreev reflection (MAR) processes. We also consider the effect of an extrinsic linewidth broadening on the quantum dot, introduced through a Dynes phenomenological parameter. The dc-quartet current manifests a crossover between the extrinsic relaxation dominated regime at low voltage to an intrinsic relaxation due to MAR processes at higher voltage. Finally, we study the coupling between the two FWS-Andreev ladders due to Landau-Zener-Stückelberg transitions, and its effect on the crossover in the relaxation mechanism. Three important low-energy scales are identified, and a perspective is to relate those low-energy scales to a recent noise cross-correlation experiment (Y. Cohen et al., arXiv:1606.08436).

  9. Further exploration of dissemination bias in qualitative research required to facilitate assessment within qualitative evidence syntheses.

    Science.gov (United States)

    Toews, Ingrid; Booth, Andrew; Berg, Rigmor C; Lewin, Simon; Glenton, Claire; Munthe-Kaas, Heather M; Noyes, Jane; Schroter, Sara; Meerpohl, Joerg J

    2017-08-01

    To conceptualise and discuss dissemination bias in qualitative research. It is likely that the mechanisms leading to dissemination bias in quantitative research, including time lag, language, gray literature, and truncation bias also contribute to dissemination bias in qualitative research. These conceptual considerations have informed the development of a research agenda. Further exploration of dissemination bias in qualitative research is needed, including the extent of non-dissemination and related dissemination bias, and how to assess dissemination bias within qualitative evidence syntheses. We also need to consider the mechanisms through which dissemination bias in qualitative research could occur to explore approaches for reducing it. Copyright © 2017 Elsevier Inc. All rights reserved.

  10. Development of theoretical approach for describing electronic properties of hetero-interface systems under applied bias voltage

    Science.gov (United States)

    Iida, Kenji; Noda, Masashi; Nobusada, Katsuyuki

    2017-02-01

    We have developed a theoretical approach for describing the electronic properties of hetero-interface systems under an applied electrode bias. The finite-temperature density functional theory is employed for controlling the chemical potential in their interfacial region, and thereby the electronic charge of the system is obtained. The electric field generated by the electronic charging is described as a saw-tooth-like electrostatic potential. Because of the continuum approximation of dielectrics sandwiched between electrodes, we treat dielectrics with thicknesses in a wide range from a few nanometers to more than several meters. Furthermore, the approach is implemented in our original computational program named grid-based coupled electron and electromagnetic field dynamics (GCEED), facilitating its application to nanostructures. Thus, the approach is capable of comprehensively revealing electronic structure changes in hetero-interface systems with an applied bias that are practically useful for experimental studies. We calculate the electronic structure of a SiO2-graphene-boron nitride (BN) system in which an electrode bias is applied between the graphene layer and an electrode attached on the SiO2 film. The electronic energy barrier between graphene and BN is varied with an applied bias, and the energy variation depends on the thickness of the BN film. This is because the density of states of graphene is so low that the graphene layer cannot fully screen the electric field generated by the electrodes. We have demonstrated that the electronic properties of hetero-interface systems are well controlled by the combination of the electronic charging and the generated electric field.

  11. Design of a Solid-State Fast Voltage Compensator for klystron modulators requiring constant AC power consumption

    CERN Document Server

    Aguglia, Davide; Viarouge, Philippe; Cros, Jerome

    2014-01-01

    This paper proposes a novel topological solution for klystron modulators integrating a Fast Voltage Compensator which allows an operation at constant power consumption from the utility grid. This kind of solution is mandatory for the CLIC project under study, which requires several hundreds of synchronously operated klystron modulators for a total pulsed power of 39 GW. The topology is optimized for the challenging CLIC specifications, which require a very precise output voltage flat-top as well as fast rise and fall times (3µs). The Fast Voltage Compensator is integrated in the modulator such that it only has to manage the capacitor charger current and a fraction of the charging voltage. Consequently, its dimensioning power and cost is minimized.

  12. Regression Analysis of the Effect of Bias Voltage on Nano- and Macrotribological Properties of Diamond-Like Carbon Films Deposited by a Filtered Cathodic Vacuum Arc Ion-Plating Method

    Directory of Open Access Journals (Sweden)

    Shojiro Miyake

    2014-01-01

    Full Text Available Diamond-like carbon (DLC films are deposited by bend filtered cathodic vacuum arc (FCVA technique with DC and pulsed bias voltage. The effects of varying bias voltage on nanoindentation and nanowear properties were evaluated by atomic force microscopy. DLC films deposited with DC bias voltage of −50 V exhibited the greatest hardness at approximately 50 GPa, a low modulus of dissipation, low elastic modulus to nanoindentation hardness ratio, and high nanowear resistance. Nanoindentation hardness was positively correlated with the Raman peak ratio Id/Ig, whereas wear depth was negatively correlated with this ratio. These nanotribological properties highly depend on the films’ nanostructures. The tribological properties of the FCVA-DLC films were also investigated using a ball-on-disk test. The average friction coefficient of DLC films deposited with DC bias voltage was lower than that of DLC films deposited with pulse bias voltage. The friction coefficient calculated from the ball-on-disk test was correlated with the nanoindentation hardness in dry conditions. However, under boundary lubrication conditions, the friction coefficient and specific wear rate had little correlation with nanoindentation hardness, and wear behavior seemed to be influenced by other factors such as adhesion strength between the film and substrate.

  13. Simultaneous Kerr and Faraday investigations of boundary magnetization and order parameter switching in voltage-controllable exchange bias films

    Science.gov (United States)

    Wang, Junlei; Echtenkamp, Will; Street, Mike; Binek, Christian

    2015-03-01

    Magnetoelectric oxides are of great interest for ultra-low power spintronics with memory and logic function. A key property for the realization of electrically switchable state variables is the voltage-controlled boundary magnetization in magnetoelectric antiferromagnets. It allows electric switching of an adjacent exchange coupled ferromagnetic layer in the absence of dissipative currents. Previous surface sensitive measurements of boundary magnetization in thin films of the archetypical magnetoelectric antiferromagnet chromia lacked explicit demonstration of the predicted rigid coupling between the bulk antiferromagnetic order parameter and the boundary magnetization. We designed a magneto-optical setup allowing simultaneous measurement of Kerr and Faraday rotation. Our experiments correlate electric field induced bulk magneto-optical effects (non-reciprocal rotation), including the response on switching of the antiferromagnetic order parameter, with the boundary magnetization. Our results suggest that switching of a ferromagnetic film strongly exchange coupled to a magnetoelectric antiferromagnetic ultra-thin film allows switching of the antiferromagnetic order parameter. We investigate the possibility that this switching phenomenon might induce a voltage pulse via a generalized variation of the inverse linear magnetoelectric effect. This project was supported by SRC through CNFD, an SRC-NRI Center, by C-SPIN, part of STARnet, and by the NSF through MRSEC.

  14. Effect of bias voltage on tunneling mechanism in Co{sub 40}Fe{sub 40}B{sub 20}/MgO/Co{sub 40}Fe{sub 40}B{sub 20} pseudo-spin valve

    Energy Technology Data Exchange (ETDEWEB)

    Yıldırım, Mustafa; Öksüzoğlu, Ramis Mustafa, E-mail: rmoksuzoglu@anadolu.edu.tr

    2015-04-01

    Bias voltage dependence of tunneling mechanism has been systematically investigated in Co{sub 40}Fe{sub 40}B{sub 20} (2.1 nm)/MgO (2 nm)/Co{sub 40}Fe{sub 40}B{sub 20} (1.7 nm) pseudo-spin valve magnetic tunnel junction deposited using the combination of the pulsed DC unbalanced magnetron and RF magnetron sputtering techniques. Structural investigations revealed polycrystalline and partially (001) oriented growth of CoFeB/MgO(001) MTJ with similar low interface roughness on both side of the MgO barrier. The junction with a 25×25 µm{sup 2} area indicates a giant tunnel magnetoresistance in the order of 505% at room temperature. The magnetoresistance ratio decreases with increasing applied bias voltage ranging from 0.5 to 1.8 V. Reasonable values for barrier thickness and heights were obtained using the combination of Brinkman and Gundlach models, including average barrier height and symmetry. Both barrier parameters and the tunneling mechanism vary in dependence of applied bias voltage. The tunneling mechanism indicates a change from direct to the FN tunneling, especially when reaching high bias voltages. Effect of the tunneling mechanism on the bias dependence of the magnetoresistance was also discussed. - Highlights: • Polycrystalline and partially (001) oriented CoFeB/MgO MTJ with similar interface roughness was produced. • TMR ratio of 505% was obtained at room temperature, decreasing with increasing bias. • Similar interface roughness with low barrier asymmetry results in high TMR ratio. • Tunneling mechanism changes from direct to Fowler–Nordheim for applied biases >0.8 V. • Bias dependence of TMR is correlated with change of the tunneling mechanism.

  15. Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

    Science.gov (United States)

    Blaho, M.; Gregušová, D.; Haščík, Š.; Ťapajna, M.; Fröhlich, K.; Šatka, A.; Kuzmík, J.

    2017-07-01

    Threshold voltage instabilities are examined in self-aligned E/D-mode n++ GaN/InAlN/GaN MOS HEMTs with a gate length of 2 μm and a source-drain spacing of 10 μm integrated in a logic invertor. The E-mode MOS HEMT technology is based on selective dry etching of the cap layer which is combined with Al2O3 grown by atomic-layer deposition at 380 K. In the D-mode MOS HEMT, the gate recessing is skipped. The nominal threshold voltage (VT) of E/D-mode MOS HEMTs was 0.6 and -3.4 V, respectively; the technology invariant maximal drain current was about 0.45 A/mm. Analysis after 580 K/15 min annealing step and at an elevated temperature up to 430 K reveals opposite device behavior depending on the HEMT operational mode. It was found that the annealing step decreases VT of the D-mode HEMT due to a reduced electron injection into the modified oxide. On the other hand, VT of the E-mode HEMT increases with reduced density of surface donors at the oxide/InAlN interface. Operation at the elevated temperature produces reversible changes: increase/decrease in the VT of the respective D-/E-mode HEMTs. Additional bias-induced experiments exhibit complex trapping phenomena in the devices: Coaction of shallow (˜0.1 eV below EC) traps in the GaN buffer and deep levels at the oxide/InAlN interface was identified for the E-mode device, while trapping in the D-mode HEMTs was found to be consistent with a thermo-ionic injection of electrons into bulk oxide traps (˜0.14 eV above EF) and trapping at the oxide/GaN cap interface states.

  16. Depression-biased reverse plasticity rule is required for stable learning at top-down connections.

    Directory of Open Access Journals (Sweden)

    Kendra S Burbank

    Full Text Available Top-down synapses are ubiquitous throughout neocortex and play a central role in cognition, yet little is known about their development and specificity. During sensory experience, lower neocortical areas are activated before higher ones, causing top-down synapses to experience a preponderance of post-synaptic activity preceding pre-synaptic activity. This timing pattern is the opposite of that experienced by bottom-up synapses, which suggests that different versions of spike-timing dependent synaptic plasticity (STDP rules may be required at top-down synapses. We consider a two-layer neural network model and investigate which STDP rules can lead to a distribution of top-down synaptic weights that is stable, diverse and avoids strong loops. We introduce a temporally reversed rule (rSTDP where top-down synapses are potentiated if post-synaptic activity precedes pre-synaptic activity. Combining analytical work and integrate-and-fire simulations, we show that only depression-biased rSTDP (and not classical STDP produces stable and diverse top-down weights. The conclusions did not change upon addition of homeostatic mechanisms, multiplicative STDP rules or weak external input to the top neurons. Our prediction for rSTDP at top-down synapses, which are distally located, is supported by recent neurophysiological evidence showing the existence of temporally reversed STDP in synapses that are distal to the post-synaptic cell body.

  17. Advantages and limitations of transition voltage spectroscopy: A theoretical analysis

    NARCIS (Netherlands)

    Mirjani, F.; Thijssen, J.M.; Van der Molen, S.J.

    2011-01-01

    In molecular charge transport, transition voltage spectroscopy (TVS) holds the promise that molecular energy levels can be explored at bias voltages lower than required for resonant tunneling. We investigate the theoretical basis of this tool using a generic model. In particular, we study the length

  18. Dynamic range of low-voltage cascode current mirrors

    DEFF Research Database (Denmark)

    Bruun, Erik; Shah, Peter Jivan

    1995-01-01

    Low-voltage cascode current mirrors are reviewed with respect to the design limitations imposed if all transistors in the mirror are required to operate in the saturation region. It is found that both a lower limit and an upper limit exist for the cascode transistor bias voltage. Further, the use...

  19. Controlling metastable native point-defect populations in Cu(In,Ga)Se2 and Cu2ZnSnSe4 materials and solar cells through voltage-bias annealing

    Science.gov (United States)

    Teeter, G.; Harvey, S. P.; Johnston, S.

    2017-01-01

    This contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu2ZnSnSe4 (CZTSe), Cu(In,Ga)Se2 (CIGS), and CdS material properties and solar cell performance. To quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 °C to 215 °C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200 °C for CIGS and 110 °C-215 °C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate that non-equilibrium processing conditions including

  20. Controlling Metastable Native Point-Defect Populations in Cu(In,Ga)Se2 and Cu2ZnSnSe4 Materials and Solar Cells through Voltage-Bias Annealing

    Energy Technology Data Exchange (ETDEWEB)

    Teeter, Glenn; Harvey, Steve P.; Johnston, Steve

    2017-01-28

    This contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu2ZnSnSe4 (CZTSe), Cu(In,Ga)Se2 (CIGS), and CdS material properties and solar cell performance. To quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 degrees C to 215 degrees C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200 degrees C for CIGS and 110 degrees C-215 degrees C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate that non

  1. Effect of bias voltage on the structural, optical and electrical properties of ZnO.Zr thin films%衬底偏压对ZnO:Zr薄膜结构及光电性能的影响

    Institute of Scientific and Technical Information of China (English)

    张化福

    2012-01-01

    以Zn:Zr(Zr片贴在金属Zn靶上面)为溅射靶材,利用直流反应磁控溅射法在Ar/O_2混合气氛中制备Zr掺杂ZnO(ZnO:Zr)薄膜.在制备ZnO:Zr薄膜时,衬底偏压在0~60V之间变化.研究结果表明,衬底偏压对薄膜的结构、光学及电学性能有很大影响.当衬底偏压从0增大到60V时,薄膜的平均光学透过率和平均折射率都单调增大,而薄膜的晶粒尺寸先增大后减小.ZnO:Zr薄膜电阻率的变化规律与晶粒尺寸相反.%Zr-doped ZnO thin films were fabricated in Ar/O2 mixture gas by DC reactive magne- tron sputtering from a Zn:Zr target where Zr chips were attached on the surface of the metallic Zn target. During the process of deposition, the substrate bias voltage ranges from 0 to 60 V. Re- sults indicate that the bias voltage plays an important role in the structure, optical and electrical properties of the deposited films. When the bias voltage increases from 0 to 60V, the average op- tical transmittance and refractive index of ZnO: Zr films monotoneously increase. However, the crystallite size increases initially and then decreases with increasing bias voltage. For the resistivi- ty of ZnO:Zr films, the variation is on the contrary.

  2. Spectroscopic failures in photometric redshift calibration: cosmological biases and survey requirements

    Energy Technology Data Exchange (ETDEWEB)

    Cunha, Carlos E. [KIPAC, Menlo Park; Huterer, Dragan [Michigan U.; Lin, Huan [Fermilab; Busha, Michael T. [Zurich U.; Wechsler, Risa H. [SLAC

    2014-10-11

    We use N-body-spectro-photometric simulations to investigate the impact of incompleteness and incorrect redshifts in spectroscopic surveys to photometric redshift training and calibration and the resulting effects on cosmological parameter estimation from weak lensing shear-shear correlations. The photometry of the simulations is modeled after the upcoming Dark Energy Survey and the spectroscopy is based on a low/intermediate resolution spectrograph with wavelength coverage of 5500{\\AA} < {\\lambda} < 9500{\\AA}. The principal systematic errors that such a spectroscopic follow-up encounters are incompleteness (inability to obtain spectroscopic redshifts for certain galaxies) and wrong redshifts. Encouragingly, we find that a neural network-based approach can effectively describe the spectroscopic incompleteness in terms of the galaxies' colors, so that the spectroscopic selection can be applied to the photometric sample. Hence, we find that spectroscopic incompleteness yields no appreciable biases to cosmology, although the statistical constraints degrade somewhat because the photometric survey has to be culled to match the spectroscopic selection. Unfortunately, wrong redshifts have a more severe impact: the cosmological biases are intolerable if more than a percent of the spectroscopic redshifts are incorrect. Moreover, we find that incorrect redshifts can also substantially degrade the accuracy of training set based photo-z estimators. The main problem is the difficulty of obtaining redshifts, either spectroscopically or photometrically, for objects at z > 1.3. We discuss several approaches for reducing the cosmological biases, in particular finding that photo-z error estimators can reduce biases appreciably.

  3. Multifunction Voltage-Mode Filter Using Single Voltage Differencing Differential Difference Amplifier

    Directory of Open Access Journals (Sweden)

    Chaichana Amornchai

    2017-01-01

    Full Text Available In this paper, a voltage mode multifunction filter based on single voltage differencing differential difference amplifier (VDDDA is presented. The proposed filter with three input voltages and single output voltage is constructed with single VDDDA, two capacitors and two resistors. Its quality factor can be adjusted without affecting natural frequency. Also, the natural frequency can be electronically tuned via adjusting of bias current. The filter can offer five output responses, high-pas (HP, band-pass (BP, band-reject (BR, low-pass (LP and all-ass (AP functions in the same circuit topology. The output response can be selected by choosing the suitable input voltage without the component matching condition and the requirement of additional double gain voltage amplifier. PSpice simulation results to confirm an operation of the proposed filter correspond to the theory.

  4. Characterisation of the VELO High Voltage System

    CERN Document Server

    Rakotomiaramanana, B; Eklund, L

    2008-01-01

    The high voltage system supplies the bias voltage to the 88 silicon sensors which comprise the LHCb Vertex Locator (VELO). This note describes the results of the tests which have been performed on the hardware of the high voltage system of the VELO. Each individual test detailed in this note corresponds to a specific requirement of the system. These requirements arise primarily from ensuring the safety of the silicon sensors and the quality of the data taken from the VELO modules. The tests performed are in four categories: normal operation of the high voltage system; vercation of its stability under operation; discussion of its behaviour in failure modes; and details of operation at low voltage. Noteworthy issues, identified through the tests, include the behaviour of the high voltage modules at voltages below 9V, the current limit that can be applied during ramping of the voltage, and the speed with which the voltage is cut during failures of the system. The results of these tests provide high confidence th...

  5. Characterisation of the VELO High Voltage System

    CERN Document Server

    Rakotomiaramanana, B; Parkes, C; Eklund, L

    2008-01-01

    The high voltage system supplies the bias voltage to the 88 silicon sensors which comprise the LHCb Vertex Locator (VELO). This note describes the results of the tests which have been performed on the hardware of the high voltage system of the VELO. Each individual test detailed in this note corresponds to a specific requirement of the system. These requirements arise primarily from ensuring the safety of the silicon sensors and the quality of the data taken from the VELO modules. The tests performed are in four categories: normal operation of the high voltage system; verification of its stability under operation; discussion of its behaviour in failure modes; and details of operation at low voltage. Noteworthy issues, identified through the tests, include the behaviour of the high voltage modules at voltages below 9V, the current limit that can be applied during ramping of the voltage, and the speed with which the voltage is cut during failures of the system. The results of these tests provide high confidence...

  6. Effect of bias voltage and temperature on lifetime of wireless neural interfaces with Al ₂O₃ and parylene bilayer encapsulation.

    Science.gov (United States)

    Xie, Xianzong; Rieth, Loren; Caldwell, Ryan; Negi, Sandeep; Bhandari, Rajmohan; Sharma, Rohit; Tathireddy, Prashant; Solzbacher, Florian

    2015-02-01

    The lifetime of neural interfaces is a critical challenge for chronic implantations, as therapeutic devices (e.g., neural prosthetics) will require decades of lifetime. We evaluated the lifetime of wireless Utah electrode array (UEA) based neural interfaces with a bilayer encapsulation scheme utilizing a combination of alumina deposited by Atomic Layer Deposition (ALD) and parylene C. Wireless integrated neural interfaces (INIs), equipped with recording version 9 (INI-R9) ASIC chips, were used to monitor the encapsulation performance through radio-frequency (RF) power and telemetry. The wireless devices were encapsulated with 52 nm of ALD Al2O3 and 6 μm of parylene C, and tested by soaking in phosphate buffered solution (PBS) at 57 °C for 4× accelerated lifetime testing. The INIs were also powered continuously through 2.765 MHz inductive power and forward telemetry link at unregulated 5 V. The bilayer encapsulated INIs were fully functional for ∼35 days (140 days at 37 °C equivalent) with consistent power-up frequencies (∼910 MHz), stable RF signal (∼-75 dBm), and 100 % command reception rate. This is ∼10 times of equivalent lifetime of INIs with parylene-only encapsulation (13 days) under same power condition at 37 °C. The bilayer coated INIs without continuous powering lasted over 1860 equivalent days (still working) at 37 °C. Those results suggest that bias stress is a significant factor to accelerate the failure of the encapsulated devices. The INIs failed completely within 5 days of the initial frequency shift of RF signal at 57 °C, which implied that the RF frequency shift is an early indicator of encapsulation/device failure.

  7. An Elephant in the Room: Bias in Evaluating a Required Quantitative Methods Course

    Science.gov (United States)

    Fletcher, Joseph F.; Painter-Main, Michael A.

    2014-01-01

    Undergraduate Political Science programs often require students to take a quantitative research methods course. Such courses are typically among the most poorly rated. This can be due, in part, to the way in which courses are evaluated. Students are generally asked to provide an overall rating, which, in turn, is widely used by students, faculty,…

  8. An Elephant in the Room: Bias in Evaluating a Required Quantitative Methods Course

    Science.gov (United States)

    Fletcher, Joseph F.; Painter-Main, Michael A.

    2014-01-01

    Undergraduate Political Science programs often require students to take a quantitative research methods course. Such courses are typically among the most poorly rated. This can be due, in part, to the way in which courses are evaluated. Students are generally asked to provide an overall rating, which, in turn, is widely used by students, faculty,…

  9. Caution Is Required in Interpretation of Mutations in the Voltage Sensing Domain of Voltage Gated Channels as Evidence for Gating Mechanisms

    Directory of Open Access Journals (Sweden)

    Alisher M. Kariev

    2015-01-01

    Full Text Available The gating mechanism of voltage sensitive ion channels is generally considered to be the motion of the S4 transmembrane segment of the voltage sensing domains (VSD. The primary supporting evidence came from R→C mutations on the S4 transmembrane segment of the VSD, followed by reaction with a methanethiosulfonate (MTS reagent. The cys side chain is –SH (reactive form –S−; the arginine side chain is much larger, leaving space big enough to accommodate the MTS sulfonate head group. The cavity created by the mutation has space for up to seven more water molecules than were present in wild type, which could be displaced irreversibly by the MTS reagent. Our quantum calculations show there is major reorientation of three aromatic residues that face into the cavity in response to proton displacement within the VSD. Two phenylalanines reorient sufficiently to shield/unshield the cysteine from the intracellular and extracellular ends, depending on the proton positions, and a tyrosine forms a hydrogen bond to the cysteine sulfur with its side chain –OH. These could produce the results of the experiments that have been interpreted as evidence for physical motion of the S4 segment, without physical motion of the S4 backbone. The computations strongly suggest that the interpretation of cysteine substitution reaction experiments be re-examined in the light of these considerations.

  10. Enhanced thermal stability and mechanical properties of nitrogen deficient titanium aluminum nitride (Ti0.54Al0.46Ny) thin films by tuning the applied negative bias voltage

    Science.gov (United States)

    Calamba, K. M.; Schramm, I. C.; Johansson Jõesaar, M. P.; Ghanbaja, J.; Pierson, J. F.; Mücklich, F.; Odén, M.

    2017-08-01

    Aspects on the phase stability and mechanical properties of nitrogen deficient (Ti0.54Al0.46)Ny alloys were investigated. Solid solution alloys of (Ti,Al)N were grown by cathodic arc deposition. The kinetic energy of the impinging ions was altered by varying the substrate bias voltage from -30 V to -80 V. Films deposited with a high bias value of -80 V showed larger lattice parameter, finer columnar structure, and higher compressive residual stress resulting in higher hardness than films biased at -30 V when comparing their as-deposited states. At elevated temperatures, the presence of nitrogen vacancies and point defects (anti-sites and self-interstitials generated by the ion-bombardment during coating deposition) in (Ti0.54Al0.46)N0.87 influence the driving force for phase separation. Highly biased nitrogen deficient films have point defects with higher stability during annealing, which cause a delay of the release of the stored lattice strain energy and then accelerates the decomposition tendencies to thermodynamically stable c-TiN and w-AlN. Low biased nitrogen deficient films have retarded phase transformation to w-AlN, which results in the prolongment of age hardening effect up to 1100 °C, i.e., the highest reported temperature for Ti-Al-N material system. Our study points out the role of vacancies and point defects in engineering thin films with enhanced thermal stability and mechanical properties for high temperature hard coating applications.

  11. Depth of interaction and bias voltage depenence of the spectral response in a pixellated CdTe detector operating in time-over-threshold mode subjected to monochromatic X-rays

    Science.gov (United States)

    Fröjdh, E.; Fröjdh, C.; Gimenez, E. N.; Maneuski, D.; Marchal, J.; Norlin, B.; O'Shea, V.; Stewart, G.; Wilhelm, H.; Modh Zain, R.; Thungström, G.

    2012-03-01

    High stopping power is one of the most important figures of merit for X-ray detectors. CdTe is a promising material but suffers from: material defects, non-ideal charge transport and long range X-ray fluorescence. Those factors reduce the image quality and deteriorate spectral information. In this project we used a monochromatic pencil beam collimated through a 20μm pinhole to measure the detector spectral response in dependance on the depth of interaction. The sensor was a 1mm thick CdTe detector with a pixel pitch of 110μm, bump bonded to a Timepix readout chip operating in Time-Over-Threshold mode. The measurements were carried out at the Extreme Conditions beamline I15 of the Diamond Light Source. The beam was entering the sensor at an angle of \\texttildelow20 degrees to the surface and then passed through \\texttildelow25 pixels before leaving through the bottom of the sensor. The photon energy was tuned to 77keV giving a variation in the beam intensity of about three orders of magnitude along the beam path. Spectra in Time-over-Threshold (ToT) mode were recorded showing each individual interaction. The bias voltage was varied between -30V and -300V to investigate how the electric field affected the spectral information. For this setup it is worth noticing the large impact of fluorescence. At -300V the photo peak and escape peak are of similar height. For high bias voltages the spectra remains clear throughout the whole depth but for lower voltages as -50V, only the bottom part of the sensor carries spectral information. This is an effect of the low hole mobility and the longer range the electrons have to travel in a low field.

  12. Field tests of wind turbines submitted to real voltage dips under the new Spanish grid code requirements

    Energy Technology Data Exchange (ETDEWEB)

    Gomez, E. [Renewable Energy Research Institute, Department of Electrical, Electronic, and Control Engineering, EPSA, Universidad de Castilla-La Mancha, 02071 Albacete, (Spain); Fuentes, J. A.; Molina-Garcia, A.; Ruz, F. [Department of Electrical Engineering, Universidad Politecnica de Cartagena, 30202 Cartagena, (Spain); Jimenez, F. [Engineering Department, Gamesa Eolica S.A., Poligono Agustinos, calle A, E-31013 Pamplona, (Spain)

    2007-06-27

    This paper adds the new Spanish grid code to the previously published works about the comparison of international regulations for connection of wind turbines to the network. All the electrical magnitudes - currents and active and reactive power - regulated in the Spanish grid code are studied when the wind turbines are submitted to real voltage dips. Because grid codes and, specifically, the Spanish grid code do not fix the reactive power definition to be applied, four definitions commonly used have also been studied. Taking advantage of the voltage dips field tests carried out to the Gamesa G80 wind turbines, the results obtained for two representative voltage dip tests are presented: a three-phase and a phase-to-phase voltage dip. (Author).

  13. High currents, low voltages. Low-cost, high efficiency power supply meets the requirements of Intel Mobile Voltage Positioning; Von dicken Stroemen und kleinen Spannungen. Preiswerte Stromversorgung mit hohem Wirkungsgrad erfuellt die Anforderungen des Intel Mobile Voltage Positioning

    Energy Technology Data Exchange (ETDEWEB)

    Chen, V.W.; Guan, P.; Chen, D. [Linear Technology, CA (United States)

    2001-12-27

    The increasing demands on notebook computers have clock rates and currents and reduced voltages as CPUs are produced in increasingly smaller structural sizes. This makes high demands on power supply. [German] Die steigende Nachfrage nach Rechenleistung in Notebook-Computern hat zu einem betraechtlichen Anstieg der Taktfrequenzen und der Stromaufnahme der CPUs gefuehrt. Gleichzeitig sind die Versorgungsspannungen erheblich gesunken, da die CPUs in Prozessen mit immer kleineren Strukturgroessen hergestellt werden. Als die CPU-Taktfrequenzen 1 GHz ueberstiegen, hat die Stromaufnahme der CPU erstmals 20 A ueberschritten, und die minimale Versorgungsspannung ist auf unter 1 V gefallen. Dies stellt gewaltige Anforderungen an die Stromversorgungen. (orig.)

  14. Effect of applied bias voltage on corrosion-resistance for TiC{sub 1-x}N{sub x} and Ti{sub 1-x}Nb{sub x}C{sub 1-y}N{sub y} coatings

    Energy Technology Data Exchange (ETDEWEB)

    Caicedo, J.C., E-mail: Jcesarca@calima.univalle.edu.co [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain); Amaya, C. [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Laboratorio de Recubrimientos Duros DT-ASTIN SENA, Cali (Colombia); Yate, L. [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain); Aperador, W.; Zambrano, G.; Gomez, M.E. [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Alvarado-Rivera, J.; Munoz-Saldana, J. [Centro de Investigacion y de Estudios Avanzados del IPN, Unidad Queretaro (Mexico); Prieto, P. [Department of Physics, Universidad del Valle, Ciudad Universitaria Melendez, A.A. 25360 Cali (Colombia); Centro de Excelencia en Nuevos Materiales, Calle 13 100-00 Edificio 320, espacio 1026, Cali (Colombia)

    2010-02-15

    Corrosion-resistance behavior of titanium carbon nitride (Ti-C-N) and titanium niobium carbon nitride (Ti-Nb-C-N) coatings deposited onto Si(1 0 0) and AISI 4140 steel substrates via r.f. magnetron sputtering process was analyzed. The coatings in contact with a solution of sodium chloride at 3.5% were studied by Tafel polarization curves and impedance spectroscopy methods (EIS). Variations of the bias voltage were carried out for each series of deposition to observe the influence of this parameter upon the electrochemical properties of the coatings. The introduction of Nb in the ternary Ti-C-N film was evaluated via X-ray diffraction (XRD) analysis. The structure was characterized by using Raman spectroscopy to identify ternary and quaternary compounds. Surface corrosion processes were characterized using optical microscopy and scanning electron microscopy (SEM). XRD results show conformation of the quaternary phase, change in the strain of the film, and lattice parameter as the effect of the Nb inclusion. The main Raman bands were assigned to interstitial phases and 'impurities' of the coatings. Changes in Raman intensities were attributed to the incorporation of niobium in the Ti-C-N structure and possibly to resonance enhancement. Finally, the corrosion data obtained for Ti-C-N were compared with the results of corrosion tests of Ti-Nb-C-N coating. The results obtained showed that the incorporation of niobium to Ti-C-N coatings led to an increase in the corrosion-resistance. On another hand, an increase in the bias voltage led to a decrease in the corrosion-resistance for both Ti-C-N and Ti-Nb-C-N coatings.

  15. Electric control of exchange bias training.

    Science.gov (United States)

    Echtenkamp, W; Binek, Ch

    2013-11-01

    Voltage-controlled exchange bias training and tunability are introduced. Isothermal voltage pulses are used to reverse the antiferromagnetic order parameter of magnetoelectric Cr(2)O(3), and thus continuously tune the exchange bias of an adjacent CoPd film. Voltage-controlled exchange bias training is initialized by tuning the antiferromagnetic interface into a nonequilibrium state incommensurate with the underlying bulk. Interpretation of these hitherto unreported effects contributes to new understanding in electrically controlled magnetism.

  16. Electric Control of Exchange Bias Training

    Science.gov (United States)

    Echtenkamp, W.; Binek, Ch.

    2013-11-01

    Voltage-controlled exchange bias training and tunability are introduced. Isothermal voltage pulses are used to reverse the antiferromagnetic order parameter of magnetoelectric Cr2O3, and thus continuously tune the exchange bias of an adjacent CoPd film. Voltage-controlled exchange bias training is initialized by tuning the antiferromagnetic interface into a nonequilibrium state incommensurate with the underlying bulk. Interpretation of these hitherto unreported effects contributes to new understanding in electrically controlled magnetism.

  17. Dynamic Voltage and Frequency Scaling and Adaptive Body Biasing for Active and Leakage Power Reduction in MPSoC: a Literature Overview

    NARCIS (Netherlands)

    Milutinovic, A.; Molnos, Anca; Goossens, Kees; Smit, Gerardus Johannes Maria

    2009-01-01

    Power is an important design constraint for all nomadic and tethered devices as mobile phones or media-boxes today. This is mainly because it limits their operational time or because of the required operational thermal conditions. In order to keep the pace with increasing number of use-cases while

  18. Dynamic Voltage and Frequency Scaling and Adaptive Body Biasing for Active and Leakage Power Reduction in MPSoC: a Literature Overview

    NARCIS (Netherlands)

    Milutinović, Aleksandar; Molnos, Anca; Goossens, Kees; Smit, Gerard J.M.

    2009-01-01

    Power is an important design constraint for all nomadic and tethered devices as mobile phones or media-boxes today. This is mainly because it limits their operational time or because of the required operational thermal conditions. In order to keep the pace with increasing number of use-cases while i

  19. A novel biological activity of praziquantel requiring voltage-operated Ca2+ channel beta subunits: subversion of flatworm regenerative polarity.

    Directory of Open Access Journals (Sweden)

    Taisaku Nogi

    Full Text Available BACKGROUND: Approximately 200 million people worldwide harbour parasitic flatworm infections that cause schistosomiasis. A single drug-praziquantel (PZQ-has served as the mainstay pharmacotherapy for schistosome infections since the 1980s. However, the relevant in vivo target(s of praziquantel remain undefined. METHODS AND FINDINGS: Here, we provide fresh perspective on the molecular basis of praziquantel efficacy in vivo consequent to the discovery of a remarkable action of PZQ on regeneration in a species of free-living flatworm (Dugesia japonica. Specifically, PZQ caused a robust (100% penetrance and complete duplication of the entire anterior-posterior axis during flatworm regeneration to yield two-headed organisms with duplicated, integrated central nervous and organ systems. Exploiting this phenotype as a readout for proteins impacting praziquantel efficacy, we demonstrate that PZQ-evoked bipolarity was selectively ablated by in vivo RNAi of voltage-operated calcium channel (VOCC beta subunits, but not by knockdown of a VOCC alpha subunit. At higher doses of PZQ, knockdown of VOCC beta subunits also conferred resistance to PZQ in lethality assays. CONCLUSIONS: This study identifies a new biological activity of the antischistosomal drug praziquantel on regenerative polarity in a species of free-living flatworm. Ablation of the bipolar regenerative phenotype evoked by PZQ via in vivo RNAi of VOCC beta subunits provides the first genetic evidence implicating a molecular target crucial for in vivo PZQ activity and supports the 'VOCC hypothesis' of PZQ efficacy. Further, in terms of regenerative biology and Ca(2+ signaling, these data highlight a novel role for voltage-operated Ca(2+ entry in regulating in vivo stem cell differentiation and regenerative patterning.

  20. Voltage Dependence of Supercapacitor Capacitance

    Directory of Open Access Journals (Sweden)

    Szewczyk Arkadiusz

    2016-09-01

    Full Text Available Electronic Double-Layer Capacitors (EDLC, called Supercapacitors (SC, are electronic devices that are capable to store a relatively high amount of energy in a small volume comparing to other types of capacitors. They are composed of an activated carbon layer and electrolyte solution. The charge is stored on electrodes, forming the Helmholtz layer, and in electrolyte. The capacitance of supercapacitor is voltage- dependent. We propose an experimental method, based on monitoring of charging and discharging a supercapacitor, which enables to evaluate the charge in an SC structure as well as the Capacitance-Voltage (C-V dependence. The measurement setup, method and experimental results of charging/discharging commercially available supercapacitors in various voltage and current conditions are presented. The total charge stored in an SC structure is proportional to the square of voltage at SC electrodes while the charge on electrodes increases linearly with the voltage on SC electrodes. The Helmholtz capacitance increases linearly with the voltage bias while a sublinear increase of total capacitance was found. The voltage on SC increases after the discharge of electrodes due to diffusion of charges from the electrolyte to the electrodes. We have found that the recovery voltage value is linearly proportional to the initial bias voltage value.

  1. Media Bias

    OpenAIRE

    Sendhil Mullainathan; Andrei Shleifer

    2002-01-01

    There are two different types of media bias. One bias, which we refer to as ideology, reflects a news outlet's desire to affect reader opinions in a particular direction. The second bias, which we refer to as spin, reflects the outlet's attempt to simply create a memorable story. We examine competition among media outlets in the presence of these biases. Whereas competition can eliminate the effect of ideological bias, it actually exaggerates the incentive to spin stories.

  2. Efficient design and simulation of an expandable hybrid (wind-photovoltaic) power system with MPPT and inverter input voltage regulation features in compliance with electric grid requirements

    Energy Technology Data Exchange (ETDEWEB)

    Skretas, Sotirios B.; Papadopoulos, Demetrios P. [Electrical Machines Laboratory, Department of Electrical and Computer Engineering, Democritos University of Thrace (DUTH), 12 V. Sofias, 67100 Xanthi (Greece)

    2009-09-15

    In this paper an efficient design along with modeling and simulation of a transformer-less small-scale centralized DC - bus Grid Connected Hybrid (Wind-PV) power system for supplying electric power to a single phase of a three phase low voltage (LV) strong distribution grid are proposed and presented. The main components of the hybrid system are: a PV generator (PVG); and an array of horizontal-axis, fixed-pitch, small-size, variable-speed wind turbines (WTs) with direct-driven permanent magnet synchronous generator (PMSG) having an embedded uncontrolled bridge rectifier. An overview of the basic theory of such systems along with their modeling and simulation via Simulink/MATLAB software package are presented. An intelligent control method is applied to the proposed configuration to simultaneously achieve three desired goals: to extract maximum power from each hybrid power system component (PVG and WTs); to guarantee DC voltage regulation/stabilization at the input of the inverter; to transfer the total produced electric power to the electric grid, while fulfilling all necessary interconnection requirements. Finally, a practical case study is conducted for the purpose of fully evaluating a possible installation in a city site of Xanthi/Greece, and the practical results of the simulations are presented. (author)

  3. High precision, low disturbance calibration of the High Voltage system of the CMS Barrel Electromagnetic Calorimeter

    CERN Document Server

    Marzocchi, Badder

    2017-01-01

    The CMS Electromagnetic Calorimeter is made of scintillating lead tungstate crystals, using avalanche photodiodes (APD) as photo-detectors in the barrel part. The high voltage system, consisting of 1224 channels, biases groups of 50 APD pairs, each at a voltage of about 380 V. The APD gain dependence on the voltage is 3pct/V. A stability of better than 60 mV is needed to have negligible impact on the calorimeter energy resolution. Until 2015 manual calibrations were performed yearly. A new calibration system was deployed recently, which satisfies the requirement of low disturbance and high precision. The system is discussed in detail and first operational experience is presented.

  4. Origin of the transition voltage in gold–vacuum–gold atomic junctions

    KAUST Repository

    Wu, Kunlin

    2012-12-13

    The origin and the distance dependence of the transition voltage of gold-vacuum-gold junctions are investigated by employing first-principles quantum transport simulations. Our calculations show that atomic protrusions always exist on the electrode surface of gold-vacuum-gold junctions fabricated using the mechanically controllable break junction (MCBJ) method. The transition voltage of these gold-vacuum-gold junctions with atomically sharp electrodes is determined by the local density of states (LDOS) of the apex gold atom on the electrode surface rather than by the vacuum barrier shape. More specifically, the absolute value of the transition voltage roughly equals the rising edge of the LDOS peak contributed by the 6p atomic orbitals of the gold atoms protruding from the electrode surface, whose local Fermi level is shifted downwards when a bias voltage is applied. Since the LDOS of the apex gold atom depends strongly on the exact shape of the electrode, the transition voltage is sensitive to the variation of the atomic configuration of the junction. For asymmetric junctions, the transition voltage may also change significantly depending on the bias polarity. Considering that the occurrence of the transition voltage requires the electrode distance to be larger than a critical value, the interaction between the two electrodes is actually rather weak. Consequently, the LDOS of the apex gold atom is mainly determined by its local atomic configuration and the transition voltage only depends weakly on the electrode distance as observed in the MCBJ experiments. © 2013 IOP Publishing Ltd.

  5. Origin of the transition voltage in gold-vacuum-gold atomic junctions.

    Science.gov (United States)

    Wu, Kunlin; Bai, Meilin; Sanvito, Stefano; Hou, Shimin

    2013-01-18

    The origin and the distance dependence of the transition voltage of gold-vacuum-gold junctions are investigated by employing first-principles quantum transport simulations. Our calculations show that atomic protrusions always exist on the electrode surface of gold-vacuum-gold junctions fabricated using the mechanically controllable break junction (MCBJ) method. The transition voltage of these gold-vacuum-gold junctions with atomically sharp electrodes is determined by the local density of states (LDOS) of the apex gold atom on the electrode surface rather than by the vacuum barrier shape. More specifically, the absolute value of the transition voltage roughly equals the rising edge of the LDOS peak contributed by the 6p atomic orbitals of the gold atoms protruding from the electrode surface, whose local Fermi level is shifted downwards when a bias voltage is applied. Since the LDOS of the apex gold atom depends strongly on the exact shape of the electrode, the transition voltage is sensitive to the variation of the atomic configuration of the junction. For asymmetric junctions, the transition voltage may also change significantly depending on the bias polarity. Considering that the occurrence of the transition voltage requires the electrode distance to be larger than a critical value, the interaction between the two electrodes is actually rather weak. Consequently, the LDOS of the apex gold atom is mainly determined by its local atomic configuration and the transition voltage only depends weakly on the electrode distance as observed in the MCBJ experiments.

  6. High Voltage Distribution

    Science.gov (United States)

    Norbeck, Edwin; Miller, Michael; Onel, Yasar

    2010-11-01

    For detector arrays that require 5 to 10 kV at a few microamps each for hundreds of detectors, using hundreds of HV power supplies is unreasonable. Bundles of hundreds of HV cables take up space that should be filled with detectors. A typical HV module can supply 1 ma, enough current for hundreds of detectors. It is better to use a single HV module and distribute the current as needed. We show a circuit that, for each detector, measures the current, cuts off the voltage if the current exceeds a set maximum, and allows the HV to be turned on or off from a control computer. The entire array requires a single HV cable and 2 or 3 control lines. This design provides the same voltage to all of the detectors, the voltage set by the single HV module. Some additional circuitry would allow a computer controlled voltage drop between the HV and each individual detector.

  7. Effects of negative bias voltage on tribological properties of W-C-N thin films by magnetron sputtering%基体负偏压对W-C-N薄膜摩擦磨损性能的影响

    Institute of Scientific and Technical Information of China (English)

    喻利花; 王蕊; 许俊华

    2013-01-01

    采用多靶反应磁控溅射设备制备了一系列不同基体负偏压的W-C-N复合膜.采用X射线衍射仪、扫描电镜、能量色散谱仪、纳米压痕仪和摩擦磨损仪对薄膜进行表征.结果表明:当负偏压小于等于80 V时,薄膜表现出六方α-WCN相结构,增加到120 V时,转变为立方β-WCN相,薄膜硬度、弹性模量和膜基结合力出现对应最佳性能点的峰值;随着负偏压的增大,薄膜质量得到改善,磨损率和摩擦系数明显降低,负偏压达到200 V时,磨损率和摩擦系数分别出现最低值4.22×10-6 mm3·N-1 ·m-1和0.27;薄膜的磨损机制主要是磨粒磨损.%W-C-N nano-composite films were fabricated by reactive magnetron sputtering technique with different negative bias voltage (Vb) Microstructure and properties of the films were investigated by X-ray diffraction, scan electron microscopy, energy dispersive spectrometer, nano-indentor and tribometer. The results show that hexagonal a-WCN phase occurs in the films as Vb is lower than or equal to 80 V. However, as Vb further increases to 120 V, β-WCN forms. Raising Vb leads to increasing of hardness, elastic modulus and binding strength of the films to peak valuse. The inerease of Vb results in improvement of surface quality and decrease of friction coefficient and wear rate for the W-C-N films. As Vb increases to 120 V, the films get the minimum wear rate and coefficient of friction , which are 4. 22 ×10-6 mm3 ·N-1·m-1 and 0. 27, respectively. Abrasive wear is the main wear mechanism.

  8. Emissive limiter bias experiment for improved confinement of tokamaks

    Energy Technology Data Exchange (ETDEWEB)

    Choe, W.; Ono, M.; Darrow, D.S. (Princeton Univ., NJ (United States). Plasma Physics Lab.); Pribyl, P.A.; Liberati, J.R.; Taylor, R.J. (California Univ., Los Angeles, CA (United States). Tokamak Fusion Lab.)

    1992-01-01

    Experiments have been performed in Ohmic discharges of the UCLA CCT tokamak with a LaB[sub 6] biased limiter, capable of emitting energetic electrons as a technique to improve confinement in tokamaks. To study the effects of emitted electrons, the limiter position, bias voltage, and plasma position were varied. The results have shown that the plasma positioning with respect to the emissive limiter plays an important role in obtaining H-mode plasmas. The emissive cathode must be located close to the last closed flux surface in order to charge up the plasma. As the cathode is moved closer to the wall, the positioning of the plasma becomes more critical since the plasma can easily detach from the cathode and reattach to the wall, resulting in the termination of H-mode. The emissive capability appears to be important for operating at lower bias voltage and reducing impurity levels in the plasma. With a heated cathode, transition to H-mode was observed for V[sub bias] [le] 50 V and I[sub inj] [ge] 30 A. At a lower cathode heater current, a higher bias voltage is required for the transition. Moreover, with a lower cathode heater current, the time delay for inducing H-mode becomes longer, which can be attributed to the required time for the self-heating of the cathode to reach the emissive temperature. From this result, we conclude that the capacity for emission can significantly improve the performance of limiter biasing for inducing H-mode transition. With L-mode plasmas, the injection current flowing out of the cathode was generally higher than 100 A.

  9. Emissive limiter bias experiment for improved confinement of tokamaks

    Energy Technology Data Exchange (ETDEWEB)

    Choe, W.; Ono, M.; Darrow, D.S. [Princeton Univ., NJ (United States). Plasma Physics Lab.; Pribyl, P.A.; Liberati, J.R.; Taylor, R.J. [California Univ., Los Angeles, CA (United States). Tokamak Fusion Lab.

    1992-10-01

    Experiments have been performed in Ohmic discharges of the UCLA CCT tokamak with a LaB{sub 6} biased limiter, capable of emitting energetic electrons as a technique to improve confinement in tokamaks. To study the effects of emitted electrons, the limiter position, bias voltage, and plasma position were varied. The results have shown that the plasma positioning with respect to the emissive limiter plays an important role in obtaining H-mode plasmas. The emissive cathode must be located close to the last closed flux surface in order to charge up the plasma. As the cathode is moved closer to the wall, the positioning of the plasma becomes more critical since the plasma can easily detach from the cathode and reattach to the wall, resulting in the termination of H-mode. The emissive capability appears to be important for operating at lower bias voltage and reducing impurity levels in the plasma. With a heated cathode, transition to H-mode was observed for V{sub bias} {le} 50 V and I{sub inj} {ge} 30 A. At a lower cathode heater current, a higher bias voltage is required for the transition. Moreover, with a lower cathode heater current, the time delay for inducing H-mode becomes longer, which can be attributed to the required time for the self-heating of the cathode to reach the emissive temperature. From this result, we conclude that the capacity for emission can significantly improve the performance of limiter biasing for inducing H-mode transition. With L-mode plasmas, the injection current flowing out of the cathode was generally higher than 100 A.

  10. Intergroup bias.

    Science.gov (United States)

    Hewstone, Miles; Rubin, Mark; Willis, Hazel

    2002-01-01

    This chapter reviews the extensive literature on bias in favor of in-groups at the expense of out-groups. We focus on five issues and identify areas for future research: (a) measurement and conceptual issues (especially in-group favoritism vs. out-group derogation, and explicit vs. implicit measures of bias); (b) modern theories of bias highlighting motivational explanations (social identity, optimal distinctiveness, uncertainty reduction, social dominance, terror management); (c) key moderators of bias, especially those that exacerbate bias (identification, group size, status and power, threat, positive-negative asymmetry, personality and individual differences); (d) reduction of bias (individual vs. intergroup approaches, especially models of social categorization); and (e) the link between intergroup bias and more corrosive forms of social hostility.

  11. Structure design and driving voltage optimization of a novel giant magnetostrictive actuator

    Science.gov (United States)

    Xue, Guangming; Zhang, Peilin; He, Zhongbo; Li, Dongwei; Cai, Canwei

    2017-01-01

    Typical giant magnetostrictive actuator (GMA) cannot meet the requirement of driving a high-speed on-off valve for limitation in bias magnetic field exerted on giant magnetostrictive material. To solve this problem, a novel GMA is designed with zero bias magnetic field. Furthermore, to satisfy the requirement of the displacement direction, a “T” type transfer rod is joined to convert material’s elongating into actuator’s shortening. Simultaneously, long responding time of the actuator, especially the rising time of coil current, is also considered in this paper. The transient-state current is modeled based on the equivalent circuit considering parallel resistance of the coil, and from computed result, high opening voltage can be taken to promote responding speed of the actuator, and then an optimized driving voltage wave is presented. At last, with the help of an experimental system, the current model is verified and the driving effect of optimized voltage wave is tested and analyzed.

  12. Does the requirement of getting active consent from parents in school-based research result in a biased sample? An empirical study.

    Science.gov (United States)

    Jelsma, Jennifer; Burgess, Theresa; Henley, Lesley

    2012-12-01

    Active parental consent is a requirement that may threaten the validity of including minors in research. This study investigated possible sources of bias between the responses of children whose parents actively consented to their participation in a school-based survey and those of children whose parents were nonresponders. Due to a serious administrative error in a study to examine health-related quality of life (HRQoL), all 514 eligible schoolchildren were tested, although only 177 parents signed consent. After deliberation, the relevant human research ethics committee gave permission to include all results in the analysis. The HRQoL was not different between the groups. Male children returned significantly fewer consent forms (p=.026). More of the nonresponding group reported that their parents "Never had enough time for them" (p=.023). The high nonresponse rate and associations between response and parental interest and gender indicate that some bias may be introduced through the need for active consent, but overall there were no differences in responses to the quality of life questionnaire.

  13. Long-term habituation of the gill-withdrawal reflex in Aplysia requires gene transcription, calcineurin and L-type voltage-gated calcium channels

    Directory of Open Access Journals (Sweden)

    Joseph eEsdin

    2010-11-01

    Full Text Available Although habituation is possibly the simplest form of learning, we still do not fully understand the neurobiological basis of habituation in any organism. To advance the goal of a comprehensive understanding of habituation, we have studied long-term habituation (LTH of the gill-withdrawal reflex (GWR in the marine snail Aplysia californica. Previously, we showed that habituation of the GWR in a reduced preparation lasts for up to 12 hr, and depends on protein synthesis, as well as activation of protein phosphatases 1 and 2A and postsynaptic glutamate receptors. Here, we have used the reduced preparation to further analyze the mechanisms of LTH in Aplysia. We found that LTH of the GWR depends on RNA synthesis because it was blocked by both the irreversible transcriptional inhibitor actinomycin-D and the reversible transcriptional inhibitor, 5,6-dichlorobenzimidazole riboside (DRB. In addition, LTH requires activation of protein phosphatase 2B (calcineurin, because it was disrupted by ascomycin. Finally, LTH was blocked by nitrendipine, which indicates that activation of L-type voltage-gated Ca2+ channels is required for this form of learning. Together with our previous results, the present results indicate that exclusively presynaptic mechanisms, although possibly sufficient for short-term habituation, are insufficient for LTH. Rather, LTH must involve postsynaptic, as well as presynaptic, mechanisms.

  14. Low-voltage gyrotrons

    Science.gov (United States)

    Glyavin, M. Yu.; Zavolskiy, N. A.; Sedov, A. S.; Nusinovich, G. S.

    2013-03-01

    For a long time, the gyrotrons were primarily developed for electron cyclotron heating and current drive of plasmas in controlled fusion reactors where a multi-megawatt, quasi-continuous millimeter-wave power is required. In addition to this important application, there are other applications (and their number increases with time) which do not require a very high power level, but such issues as the ability to operate at low voltages and have compact devices are very important. For example, gyrotrons are of interest for a dynamic nuclear polarization, which improves the sensitivity of the nuclear magnetic resonance spectroscopy. In this paper, some issues important for operation of gyrotrons driven by low-voltage electron beams are analyzed. An emphasis is made on the efficiency of low-voltage gyrotron operation at the fundamental and higher cyclotron harmonics. These efficiencies calculated with the account for ohmic losses were, first, determined in the framework of the generalized gyrotron theory based on the cold-cavity approximation. Then, more accurate, self-consistent calculations for the fundamental and second harmonic low-voltage sub-THz gyrotron designs were carried out. Results of these calculations are presented and discussed. It is shown that operation of the fundamental and second harmonic gyrotrons with noticeable efficiencies is possible even at voltages as low as 5-10 kV. Even the third harmonic gyrotrons can operate at voltages about 15 kV, albeit with rather low efficiency (1%-2% in the submillimeter wavelength region).

  15. Distinguishing Selection Bias and Confounding Bias in Comparative Effectiveness Research.

    Science.gov (United States)

    Haneuse, Sebastien

    2016-04-01

    Comparative effectiveness research (CER) aims to provide patients and physicians with evidence-based guidance on treatment decisions. As researchers conduct CER they face myriad challenges. Although inadequate control of confounding is the most-often cited source of potential bias, selection bias that arises when patients are differentially excluded from analyses is a distinct phenomenon with distinct consequences: confounding bias compromises internal validity, whereas selection bias compromises external validity. Despite this distinction, however, the label "treatment-selection bias" is being used in the CER literature to denote the phenomenon of confounding bias. Motivated by an ongoing study of treatment choice for depression on weight change over time, this paper formally distinguishes selection and confounding bias in CER. By formally distinguishing selection and confounding bias, this paper clarifies important scientific, design, and analysis issues relevant to ensuring validity. First is that the 2 types of biases may arise simultaneously in any given study; even if confounding bias is completely controlled, a study may nevertheless suffer from selection bias so that the results are not generalizable to the patient population of interest. Second is that the statistical methods used to mitigate the 2 biases are themselves distinct; methods developed to control one type of bias should not be expected to address the other. Finally, the control of selection and confounding bias will often require distinct covariate information. Consequently, as researchers plan future studies of comparative effectiveness, care must be taken to ensure that all data elements relevant to both confounding and selection bias are collected.

  16. Coordinated Voltage Control of Distributed PV Inverters for Voltage Regulation in Low Voltage Distribution Networks

    DEFF Research Database (Denmark)

    Nainar, Karthikeyan; Pokhrel, Basanta Raj; Pillai, Jayakrishnan Radhakrishna

    2017-01-01

    This paper reviews and analyzes the existing voltage control methods of distributed solar PV inverters to improve the voltage regulation and thereby the hosting capacity of a low-voltage distribution network. A novel coordinated voltage control method is proposed based on voltage sensitivity...... analysis, which is simple for computation and requires moderate automation and communication infrastructure. The proposed method is suitable for a hierarchical control structure where a supervisory controller has the provision to adapt the settings of local PV inverter controllers for overall system...

  17. Identification of Amino Acid Residues in Fibroblast Growth Factor 14 (FGF14) Required for Structure-Function Interactions with Voltage-gated Sodium Channel Nav1.6.

    Science.gov (United States)

    Ali, Syed R; Singh, Aditya K; Laezza, Fernanda

    2016-05-20

    The voltage-gated Na(+) (Nav) channel provides the basis for electrical excitability in the brain. This channel is regulated by a number of accessory proteins including fibroblast growth factor 14 (FGF14), a member of the intracellular FGF family. In addition to forming homodimers, FGF14 binds directly to the Nav1.6 channel C-tail, regulating channel gating and expression, properties that are required for intrinsic excitability in neurons. Seeking amino acid residues with unique roles at the protein-protein interaction interface (PPI) of FGF14·Nav1.6, we engineered model-guided mutations of FGF14 and validated their impact on the FGF14·Nav1.6 complex and the FGF14:FGF14 dimer formation using a luciferase assay. Divergence was found in the β-9 sheet of FGF14 where an alanine (Ala) mutation of Val-160 impaired binding to Nav1.6 but had no effect on FGF14:FGF14 dimer formation. Additional analysis revealed also a key role of residues Lys-74/Ile-76 at the N-terminal of FGF14 in the FGF14·Nav1.6 complex and FGF14:FGF14 dimer formation. Using whole-cell patch clamp electrophysiology, we demonstrated that either the FGF14(V160A) or the FGF14(K74A/I76A) mutation was sufficient to abolish the FGF14-dependent regulation of peak transient Na(+) currents and the voltage-dependent activation and steady-state inactivation of Nav1.6; but only V160A with a concomitant alanine mutation at Tyr-158 could impede FGF14-dependent modulation of the channel fast inactivation. Intrinsic fluorescence spectroscopy of purified proteins confirmed a stronger binding reduction of FGF14(V160A) to the Nav1.6 C-tail compared with FGF14(K74A/I76A) Altogether these studies indicate that the β-9 sheet and the N terminus of FGF14 are well positioned targets for drug development of PPI-based allosteric modulators of Nav channels.

  18. 负偏压离子鞘及气体压强影响表面波放电过程的粒子模拟%Particle-in-cell simulation on surface-wave discharge pro cess influenced by gas pressure and negative-biased voltage along ion sheath layer

    Institute of Scientific and Technical Information of China (English)

    陈兆权; 胡希伟; 殷志祥; 陈明功; 刘明海; 徐公林; 胡业林; 夏广庆; 宋晓; 贾晓芬

    2014-01-01

    Due to surface electromagnetic waves propagating along the dielectric-plasma interface, the application of surface-wave plasma (SWP) is limited in view of the fact that it is very difficult to realize metal sputtering by using negative-biased voltage in traditional SWP sources. Recently, this problem is overcome by a type of SWP source based on the guided wave in ion sheath layer driven by negative-biased voltage. And the plasma heating mechanism is originated from gas discharges excited by the local-enhanced electric field of surface plasmon polariton (SPP). However, the best discharge condition is not obtained because the influence factors affecting the discharge process studied is not clear. In this paper, the discharge mechanism of SWP ionization process influenced by gas pressure and negative-biased voltage along the ion sheath layer is investigated. The simulation method is by means of combining particle-in-cell (PIC) with Monte Carlo collision (MCC). Simulated results suggest that the values of negative-biased voltage and gas pressure can influence the thickness of ion sheath layer, the excitation of SPP, and the spatio-temporal conversion of wave mode, which further induces the different discharge performances. Moreover, the discussed analysis states that a better discharge performance can be obtained when approximately a negative-biased voltage of-200 V and a gas pressure of 40 Pa applied.%由于表面电磁波沿着介质-等离子体分界面传播,而很难通过对传统的表面波等离子体(SWP)源施加负偏压实现金属材料溅射,因此限制了SWP源的使用范围。近期,一种基于负偏压离子鞘导波的SWP源克服了这个问题,且其加热机理是表面等离激元(SPP)的局域增强电场激励气体放电产生。但是该SWP源放电过程的影响因素并未研究清晰,导致其最佳放电条件没有获得。本文采用粒子(PIC)和蒙特卡罗碰撞(MCC)相结合的模拟方法,探讨了负偏压离子

  19. Structure and Corrosion Resistance of Multi-layer Ti/TiN Films Prepared on Uranium by Arc Ion Plating Under Different Bias Voltages%偏压对铀表面多弧离子镀Ti/TiN多层膜的结构及抗腐蚀性能影响研究

    Institute of Scientific and Technical Information of China (English)

    刘天伟; 王小英; 江帆; 唐凯; 魏强

    2011-01-01

    Multi-layer Ti/TiN films were prepared on U and Si by using arc ion plating in different bias voltages. The microstructure and cross section morphology were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM). The results indicate that the pulse bias not only affects the diffraction peak strength, but also induces a new Ti2 N phase. The multi-layer films grow layer by layer or by island expansion. As the bias voltage is increased, the directional crystals become fine, and the films become denser. Corrosion tests in 50 μg/g Cl~ solution indicate that the multilayer films are corroded by layers, which make it difficult for corrosion solution to reach the substrate. In this way the corrosion resistance is enhanced.%在不同偏压下,利用多弧离子镀技术在U和Si基体上制备了Ti/TiN多层薄膜.利用X射线衍射仪和扫描电镜对多层膜的组织结构和薄膜界面形貌进行了分析.研究表明:脉冲偏压不但影响多层膜物相各衍射峰的强度,还诱导新相Ti2N的出现.制备的多层膜呈“犬牙”交错的层状、柱状结构生长.随脉冲偏压的增加,柱状晶结构细化,薄膜变得更加致密.通过50 μg/g Cl-溶液腐蚀研究表明:Ti/TiN多层膜提高抗腐蚀性能源于层状失效,使得腐蚀介质到达基体更加困难,抗腐蚀性能优良.

  20. A novel high voltage start up circuit for an integrated switched mode power supply

    Energy Technology Data Exchange (ETDEWEB)

    Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

  1. SEMICONDUCTOR DEVICES: A novel high voltage start up circuit for an integrated switched mode power supply

    Science.gov (United States)

    Hao, Hu; Xingbi, Chen

    2010-09-01

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions.

  2. High precision, low disturbance calibration of the High Voltage system of the CMS Barrel Electromagnetic Calorimeter

    CERN Document Server

    Fasanella, Giuseppe

    2016-01-01

    The CMS Electromagnetic Calorimeter utilizes scintillating lead tungstate crystals, with avalanche photodiodes (APD) as photo-detectors in the barrel part. 1224 HV channels bias groups of 50 APD pairs, each at a voltage of about 380 V. The APD gain dependence on the voltage is 3pct/V. A stability of better than 60 mV is needed to have negligible impact on the calorimeter energy resolution. Until 2015 manual calibrations were performed yearly. A new calibration system was deployed recently, which satisfies the requirement of low disturbance and high precision. The system is discussed in detail and first operational experience is presented.

  3. High precision, low disturbance calibration system for the CMS Barrel Electromagnetic Calorimeter High Voltage apparatus

    Science.gov (United States)

    Fasanella, G.

    2017-01-01

    The CMS Electromagnetic Calorimeter utilizes scintillation lead tungstate crystals, with avalanche photodiodes (APD) as photo-detectors in the barrel part. 1224 HV channels bias groups of 50 APD pairs, each at a voltage of about 380 V. The APD gain dependence on the voltage is 3%/V. A stability of better than 60 mV is needed to have negligible impact on the calorimeter energy resolution. Until 2015 manual calibrations were performed yearly. A new calibration system was deployed recently, which satisfies the requirement of low disturbance and high precision. The system is discussed in detail and first operational experience is presented.

  4. Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

    Energy Technology Data Exchange (ETDEWEB)

    Baszczyk, M., E-mail: baszczyk@agh.edu.pl [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); Dorosz, P.; Glab, S.; Kucewicz, W. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); Mik, L. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland); State Higher Vocational School, Tarnow (Poland); Sapor, M. [AGH University of Science and Technology, Department of Electronics, Krakow (Poland)

    2016-07-11

    Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

  5. Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

    Science.gov (United States)

    Baszczyk, M.; Dorosz, P.; Glab, S.; Kucewicz, W.; Mik, L.; Sapor, M.

    2016-07-01

    Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

  6. Accurate Switched-Voltage voltage averaging circuit

    OpenAIRE

    金光, 一幸; 松本, 寛樹

    2006-01-01

    Abstract ###This paper proposes an accurate Switched-Voltage (SV) voltage averaging circuit. It is presented ###to compensated for NMOS missmatch error at MOS differential type voltage averaging circuit. ###The proposed circuit consists of a voltage averaging and a SV sample/hold (S/H) circuit. It can ###operate using nonoverlapping three phase clocks. Performance of this circuit is verified by PSpice ###simulations.

  7. Capacitor Voltages Measurement and Balancing in Flying Capacitor Multilevel Converters Utilizing a Single Voltage Sensor

    DEFF Research Database (Denmark)

    Farivar, Glen; Ghias, Amer M. Y. M.; Hredzak, Branislav

    2017-01-01

    This paper proposes a new method for measuring capacitor voltages in multilevel flying capacitor (FC) converters that requires only one voltage sensor per phase leg. Multiple dc voltage sensors traditionally used to measure the capacitor voltages are replaced with a single voltage sensor at the ac...... side of the phase leg. The proposed method is subsequently used to balance the capacitor voltages using only the measured ac voltage. The operation of the proposed measurement and balancing method is independent of the number of the converter levels. Experimental results presented for a five-level FC...

  8. Influence of Negative Bias Voltage on Microparticles Morphology and Pixel Distribution of TiN Coatings Deposited by Multi-arc Ion Plating%负偏压对多弧离子镀TiN涂层大颗粒形貌及像素分布的影响

    Institute of Scientific and Technical Information of China (English)

    陈昌浩; 金永中; 刘东亮; 余学金

    2015-01-01

    Objective To analyze the microparticles ( MPs) morphology and pixel distribution of TiN coatings under different negative bias voltage (0, 100, 200, 300 and 400V), so as to provide basic data for industrial applications of multi-arc ion plating. Methods TiN coatings were deposited on hard alloy surface by multi-arc ion plating at different bias voltage. The surface morpholo- gy of TiN coatings was characterized by scanning electron microscope ( SEM) . At the same time, the amount and size of MPs were analyzed and the distribution of pixel was counted by ImageJ software. Results The amount of MPs on coating surface increased at first and then decreased with the increase of bias voltage. The maximum value was 1364 at 100 V and the minimum was 750 at 300 V. In addition, the area ratio of MPs on coating surface decreased gradually with the increase of bias voltage. The maximum value with worst mechanical properties was 6. 9% at 0 V and the minimum with best mechanical properties was 3. 3% at 400 V. The amount of light and dark pixel reached a maximum of 8302 at 300 V and a minimum of 4067 at 400 V. Conclusion The TiN coa-tings with best mechanical properties, low amount and small size of MPs were deposited at 400 V for 1 h with 30% duty cycle.%目的 分析不同负偏压下TiN涂层表面的大颗粒数量、尺寸和面积以及像素分布,为多弧离子镀技术的工业化应用提供基础数据. 方法 采用多弧离子镀膜技术,以脉冲负偏压为变量,在硬质合金表面沉积TiN涂层. 用扫描电子显微镜对涂层表面形貌进行表征,并利用ImageJ软件对表面大颗粒的数量和尺寸进行分析,对像素分布进行统计. 结果 随着负偏压的增加,涂层表面大颗粒的数量先增多,后减少. 负偏压为100 V时,大颗粒数量最多,为1364;负偏压为300 V时,大颗粒数量最少,为750. 此外随着负偏压的增加,大颗粒所占涂层面积比逐渐减小. 未加负偏压时,涂层表面大颗

  9. Experimental phase diagram of zero-bias conductance peaks in superconductor/semiconductor nanowire devices.

    Science.gov (United States)

    Chen, Jun; Yu, Peng; Stenger, John; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Stanescu, Tudor D; Frolov, Sergey M

    2017-09-01

    Topological superconductivity is an exotic state of matter characterized by spinless p-wave Cooper pairing of electrons and by Majorana zero modes at the edges. The first signature of topological superconductivity is a robust zero-bias peak in tunneling conductance. We perform tunneling experiments on semiconductor nanowires (InSb) coupled to superconductors (NbTiN) and establish the zero-bias peak phase in the space of gate voltage and external magnetic field. Our findings are consistent with calculations for a finite-length topological nanowire and provide means for Majorana manipulation as required for braiding and topological quantum bits.

  10. Bias in collegiate courts

    OpenAIRE

    Olowofoyeku, AA

    2016-01-01

    This article addresses the issues attending common law collegiate courts’ engagements with allegations of bias within their own ranks. It will be argued that, in such cases, it would be inappropriate to involve the collegiate panel or any member thereof in the decision, since such involvement inevitably encounters difficulties. The common law’s dilemmas require drastic solutions, but the common law arguably is illequipped to implement the required change. The answer, it will be argued, is ...

  11. A battery-based, low-noise voltage source

    Science.gov (United States)

    Wagner, Anke; Sturm, Sven; Schabinger, Birgit; Blaum, Klaus; Quint, Wolfgang

    2010-06-01

    A highly stable, low-noise voltage source was designed to improve the stability of the electrode bias voltages of a Penning trap. To avoid excess noise and ground loops, the voltage source is completely independent of the public electric network and uses a 12 V car battery to generate output voltages of ±15 and ±5 V. First, the dc supply voltage is converted into ac-voltage and gets amplified. Afterwards, the signal is rectified, filtered, and regulated to the desired output value. Each channel can deliver up to 1.5 A. The current as well as the battery voltage and the output voltages can be read out via a universal serial bus (USB) connection for monitoring purposes. With the presented design, a relative voltage stability of 7×10-7 over 6.5 h and a noise level equal or smaller than 30 nV/√Hz is achieved.

  12. Voltage controlled spintronics device for logic applications.

    Energy Technology Data Exchange (ETDEWEB)

    Bader, S. D.; You, C.-Y.

    1999-09-03

    We consider logic device concepts based on our previously proposed spintronics device element whose magnetization orientation is controlled by application of a bias voltage instead of a magnetic field. The basic building block is the voltage-controlled rotation (VCR) element that consists of a four-layer structure--two ferromagnetic layers separated by both nanometer-thick insulator and metallic spacer layers. The interlayer exchange coupling between the two ferromagnetic layers oscillates as a function of applied voltage. We illustrate transistor-like concepts and re-programmable logic gates based on VCR elements.

  13. Boosting of synaptic potentials and spine Ca transients by the peptide toxin SNX-482 requires alpha-1E-encoded voltage-gated Ca channels.

    Directory of Open Access Journals (Sweden)

    Andrew J Giessel

    Full Text Available The majority of glutamatergic synapses formed onto principal neurons of the mammalian central nervous system are associated with dendritic spines. Spines are tiny protuberances that house the proteins that mediate the response of the postsynaptic cell to the presynaptic release of glutamate. Postsynaptic signals are regulated by an ion channel signaling cascade that is active in individual dendritic spines and involves voltage-gated calcium (Ca channels, small conductance (SK-type Ca-activated potassium channels, and NMDA-type glutamate receptors. Pharmacological studies using the toxin SNX-482 indicated that the voltage-gated Ca channels that signal within spines to open SK channels belong to the class Ca(V2.3, which is encoded by the Alpha-1E pore-forming subunit. In order to specifically test this conclusion, we examined the effects of SNX-482 on synaptic signals in acute hippocampal slices from knock-out mice lacking the Alpha-1E gene. We find that in these mice, application of SNX-482 has no effect on glutamate-uncaging evoked synaptic potentials and Ca influx, indicating that that SNX-482 indeed acts via the Alpha-1E-encoded Ca(V2.3 channel.

  14. Improving transition voltage spectroscopy of molecular junctions

    DEFF Research Database (Denmark)

    Markussen, Troels; Chen, Jingzhe; Thygesen, Kristian Sommer

    2011-01-01

    Transition voltage spectroscopy (TVS) is a promising spectroscopic tool for molecular junctions. The principles in TVS is to find the minimum on a Fowler-Nordheim plot where ln(I/V2) is plotted against 1/V and relate the voltage at the minimum Vmin to the closest molecular level. Importantly, Vmin...... is approximately half the voltage required to see a peak in the dI/dV curve. Information about the molecular level position can thus be obtained at relatively low voltages. In this work we show that the molecular level position can be determined at even lower voltages, Vmin(α), by finding the minimum of ln...

  15. Key Elements of a Low Voltage, Ultracompact Plasma Spectrometer

    Science.gov (United States)

    Scime, E. E.; Barrie, A.; Dugas, M.; Elliott, D.; Ellison, S.; Keesee, A. M.; Pollock, C. J.; Rager, A.; Tersteeg, J.

    2016-01-01

    Taking advantage of technological developments in wafer-scale processing over the past two decades, such as deep etching, 3-D chip stacking, and double-sided lithography, we have designed and fabricated the key elements of an ultracompact 1.5cm (exp 3)plasma spectrometer that requires only low-voltage power supplies, has no microchannel plates, and has a high aperture area to instrument volume ratio. The initial design of the instrument targets the measurement of charged particles in the 3-20keV range with a highly directional field of view and a 100 duty cycle; i.e., the entire energy range Is continuously measured. In addition to reducing mass, size, and voltage requirements, the new design will affect the manufacturing process of plasma spectrometers, enabling large quantities of identical instruments to be manufactured at low individual unit cost. Such a plasma spectrometer is ideal for heliophysics plasma investigations, particularly for small satellite and multispacecraft missions. Two key elements of the instrument have been fabricated: the collimator and the energy analyzer. An initial collimator transparency of 20 with 3deg x 3deg angular resolution was achieved. The targeted 40 collimator transparency appears readily achievable. The targeted energy analyzer scaling factor of 1875 was achieved; i.e.20 keV electrons were selected for only a 10.7V bias voltage in the energy analyzer.

  16. Evaluation of the Voltage Support Strategies for the Low Voltage Grid Connected PV

    DEFF Research Database (Denmark)

    Demirok, Erhan; Sera, Dezso; Teodorescu, Remus

    2010-01-01

    PVs. In order to increase PV penetration level further, new voltage support control functions for individual inverters are required. This paper investigates distributed reactive power regulation and active power curtailment strategies regarding the development of PV connection capacity by evaluation......Admissible range of grid voltage is one of the strictest constraints for the penetration of distributed photovoltaic (PV) generators especially connection to low voltage (LV) public networks. Voltage limits are usually fulfilled either by network reinforcements or limiting of power injections from...

  17. Forgetting of long-term memory requires activation of NMDA receptors, L-type voltage-dependent Ca2+ channels, and calcineurin

    Science.gov (United States)

    Sachser, Ricardo Marcelo; Santana, Fabiana; Crestani, Ana Paula; Lunardi, Paula; Pedraza, Lizeth Katherine; Quillfeldt, Jorge Alberto; Hardt, Oliver; de Oliveira Alvares, Lucas

    2016-01-01

    In the past decades, the cellular and molecular mechanisms underlying memory consolidation, reconsolidation, and extinction have been well characterized. However, the neurobiological underpinnings of forgetting processes remain to be elucidated. Here we used behavioral, pharmacological and electrophysiological approaches to explore mechanisms controlling forgetting. We found that post-acquisition chronic inhibition of the N-methyl-D-aspartate receptor (NMDAR), L-type voltage-dependent Ca2+ channel (LVDCC), and protein phosphatase calcineurin (CaN), maintains long-term object location memory that otherwise would have been forgotten. We further show that NMDAR activation is necessary to induce forgetting of object recognition memory. Studying the role of NMDAR activation in the decay of the early phase of long-term potentiation (E-LTP) in the hippocampus, we found that ifenprodil infused 30 min after LTP induction in vivo blocks the decay of CA1-evoked postsynaptic plasticity, suggesting that GluN2B-containing NMDARs activation are critical to promote LTP decay. Taken together, these findings indicate that a well-regulated forgetting process, initiated by Ca2+ influx through LVDCCs and GluN2B-NMDARs followed by CaN activation, controls the maintenance of hippocampal LTP and long-term memories over time. PMID:26947131

  18. Forgetting of long-term memory requires activation of NMDA receptors, L-type voltage-dependent Ca2+ channels, and calcineurin.

    Science.gov (United States)

    Sachser, Ricardo Marcelo; Santana, Fabiana; Crestani, Ana Paula; Lunardi, Paula; Pedraza, Lizeth Katherine; Quillfeldt, Jorge Alberto; Hardt, Oliver; Alvares, Lucas de Oliveira

    2016-03-07

    In the past decades, the cellular and molecular mechanisms underlying memory consolidation, reconsolidation, and extinction have been well characterized. However, the neurobiological underpinnings of forgetting processes remain to be elucidated. Here we used behavioral, pharmacological and electrophysiological approaches to explore mechanisms controlling forgetting. We found that post-acquisition chronic inhibition of the N-methyl-D-aspartate receptor (NMDAR), L-type voltage-dependent Ca(2+) channel (LVDCC), and protein phosphatase calcineurin (CaN), maintains long-term object location memory that otherwise would have been forgotten. We further show that NMDAR activation is necessary to induce forgetting of object recognition memory. Studying the role of NMDAR activation in the decay of the early phase of long-term potentiation (E-LTP) in the hippocampus, we found that ifenprodil infused 30 min after LTP induction in vivo blocks the decay of CA1-evoked postsynaptic plasticity, suggesting that GluN2B-containing NMDARs activation are critical to promote LTP decay. Taken together, these findings indicate that a well-regulated forgetting process, initiated by Ca(2+) influx through LVDCCs and GluN2B-NMDARs followed by CaN activation, controls the maintenance of hippocampal LTP and long-term memories over time.

  19. Impact of metal overhang and guard ring techniques on breakdown voltage of Si strip sensors - 2003 IEEE nuclear science symposium, medical imaging conference, and workshop of room-temperature semiconductor detectors

    CERN Document Server

    Ranjan, K; Namrata, S; Chatterji, S; Srivastava-Ajay, K; Kumar, A; Jha, Manoj Kumar; Shivpuri, R K

    2004-01-01

    The importance of Si sensors in high-energy physics (HEP) experiments can hardly be overemphasized. However, the high luminosity and the high radiation level in the future HEP experiments, like Large Hadron Collider (LHC), has posed a serious challenge to the fabrication of Si detectors. For the safe operation over the full LHC lifetime, detectors are required to sustain very high voltage operation, well exceeding the bias voltage needed to full deplete the heavily irradiated Si sensors. Thus, the main effort in the development of Si sensors is concentrated on a design that avoids p-n junction breakdown at operational biases. Among various proposed techniques, Field-limiting Ring (FLR) (or guard ring) and Metal-Overhang (MO) are technologically simple and are suitable for vertical devices. Since high-voltage planar Si junctions are of great importance in the HEP experiments, it is very interesting to compare these two aforementioned techniques for achieving the maximum breakdown voltage under optimal conditio...

  20. Delta receptors are required for full inhibitory coupling of mu-receptors to voltage-dependent Ca(2+) channels in dorsal root ganglion neurons.

    Science.gov (United States)

    Walwyn, Wendy; John, Scott; Maga, Matthew; Evans, Christopher J; Hales, Tim G

    2009-07-01

    Recombinant micro and delta opioid receptors expressed in cell lines can form heterodimers with distinctive properties and trafficking. However, a role for opioid receptor heterodimerization in neurons has yet to be identified. The inhibitory coupling of opioid receptors to voltage-dependent Ca(2+) channels (VDCCs) is a relatively inefficient process and therefore provides a sensitive assay of altered opioid receptor function and expression. We examined micro-receptor coupling to VDCCs in dorsal root ganglion neurons of delta(+/+), delta(+/-), and delta(-/-) mice. Neurons deficient in delta receptors exhibited reduced inhibition of VDCCs by morphine and [D-Ala(2),Phe(4),Gly(5)-ol]-enkephalin (DAMGO). An absence of delta receptors caused reduced efficacy of DAMGO without affecting potency. An absence of delta receptors reduced neither the density of VDCCs nor their inhibition by either the GABA(B) receptor agonist baclofen or intracellular guanosine 5'-O-(3-thio)triphosphate. Flow cytometry revealed a reduction in micro-receptor surface expression in delta(-/-) neurons without altered DAMGO-induced internalization. There was no change in micro-receptor mRNA levels. D-Phe-Cys-Tyr-D-Trp-Arg-Thr-Pen-Thr-NH(2)-sensitive mu-receptor-coupling efficacy was fully restored to delta(+/+) levels in delta(-/-) neurons by expression of recombinant delta receptors. However, the dimerization-deficient delta-15 construct expressed in delta(-/-) neurons failed to fully restore the inhibitory coupling of micro-receptors compared with that seen in delta(+/+) neurons, suggesting that, although not essential for micro-receptor function, micro-delta receptor dimerization contributes to full micro-agonist efficacy. Because DAMGO exhibited a similar potency in delta(+/+) and delta(-/-) neurons and caused similar levels of internalization, the role for heterodimerization is probably at the level of receptor biosynthesis.

  1. Transient Voltage Recorder

    Science.gov (United States)

    Medelius, Pedro J. (Inventor); Simpson, Howard J. (Inventor)

    2002-01-01

    A voltage transient recorder can detect lightning induced transient voltages. The recorder detects a lightning induced transient voltage and adjusts input amplifiers to accurately record transient voltage magnitudes. The recorder stores voltage data from numerous monitored channels, or devices. The data is time stamped and can be output in real time, or stored for later retrieval. The transient recorder, in one embodiment, includes an analog-to-digital converter and a voltage threshold detector. When an input voltage exceeds a pre-determined voltage threshold, the recorder stores the incoming voltage magnitude and time of arrival. The recorder also determines if its input amplifier circuits clip the incoming signal or if the incoming signal is too low. If the input data is clipped or too low, the recorder adjusts the gain of the amplifier circuits to accurately acquire subsequent components of the lightning induced transients.

  2. Linearity Limits of Biased 1337 Trap Detectors

    CERN Document Server

    Balling, Petr

    2015-01-01

    The upper power limit of linear response of light trap detectors was recently measured [2,3]. We have completed this measurement with test of traps with bias voltage at several visible wavelengths using silicon photodiodes Hamamatsu S1337 1010 and made a brief test of S5227 1010. Bias extends the linearity limit by factor of more than 10 for very narrow beams and more than 30 for wide beams [5]. No irreversible changes were detected even for the highest irradiance of 33 W/cm2 at 406nm. Here we present measurement of minimal bias voltage necessary for 99%, 99.8% and 99.95% linearity for several beam sizes.

  3. An investigation of breakdown voltage in AMTECs

    Science.gov (United States)

    Momozaki, Yoichi; El-Genk, Mohamed S.

    2002-01-01

    Experiments are conducted to investigate the DC electrical breakdown voltage in cesium vapor between two planner molybdenum electrodes, 1.6 cm in diameter, separated by a 0.5 mm gap, and relate the results to the potential electrical breakdown on the cathode side of Alkali Metal Thermal-to-Electric Converters (AMTECs). In the first set of experiments, in which the electrodes are kept at 560 and 650 K, while varying the cesium pressure from 0.71 to 29 Pa, when the cooler electrode is positively biased, breakdown occurs at ~500 V, but at 700 V when the cooler electrode is negatively biased. In the second set of experiments, in which the electrodes are held at 625 and 1100 K and the cesium pressure varied from 1.7 to 235 Pa, when the cooler electrode is positively biased, breakdown voltage is <4 V, but in excess of 400 V when the cooler electrode is negatively biased. Since the first ionization potential and the ionization rate constant of cesium are lower and higher, respectively, than for the sodium (5.14 V) and potassium (4.34 V) vapors in AMTECs, the DC electrical breakdown voltage in an AMTEC is expected to be higher than measured in this work for cesium vapor. .

  4. Automatic voltage imbalance detector

    Science.gov (United States)

    Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

    1984-01-01

    A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

  5. Auto bias control and bias hold circuit for IQ-modulator in flexible optical QAM transmitter with Nyquist filtering.

    Science.gov (United States)

    Kawakami, Hiroto; Kobayashi, Takayuki; Yoshida, Mitsuteru; Kataoka, Tomoyoshi; Miyamoto, Yutaka

    2014-11-17

    An Auto Bias Control (ABC) technique for the IQ-modulator of a flexible optical QAM transmitter is described. This technique can support various optical QAM signal formats with Nyquist filtering and electronic dispersion pre-compensation. 16, 32 and 64-QAM signals (21 Gbaud) are successfully generated, and all bias voltages are held to their optimum value even when signal format is changed.

  6. Mixed voltage VLSI design

    Science.gov (United States)

    Panwar, Ramesh; Rennels, David; Alkalaj, Leon

    1993-01-01

    A technique for minimizing the power dissipated in a Very Large Scale Integration (VLSI) chip by lowering the operating voltage without any significant penalty in the chip throughput even though low voltage operation results in slower circuits. Since the overall throughput of a VLSI chip depends on the speed of the critical path(s) in the chip, it may be possible to sustain the throughput rates attained at higher voltages by operating the circuits in the critical path(s) with a high voltage while operating the other circuits with a lower voltage to minimize the power dissipation. The interface between the gates which operate at different voltages is crucial for low power dissipation since the interface may possibly have high static current dissipation thus negating the gains of the low voltage operation. The design of a voltage level translator which does the interface between the low voltage and high voltage circuits without any significant static dissipation is presented. Then, the results of the mixed voltage design using a greedy algorithm on three chips for various operating voltages are presented.

  7. Low Voltage CMOS op-amp with Rail-to-Rail Input/Output Swing

    OpenAIRE

    Gopalaiah, SV; Shivaprasad, AP

    2004-01-01

    As the supply voltage to a standard CMOS op-amp is reduced, the input common mode range and the output swing get reduced drastically. Special biasing circuits have to be used to raise them up to rail-to-rail supply voltage. Three low voltage op-amps with new biasing circuits have been proposed in this paper and their performance evaluated. The op-amp design is focused on dynamic range and high drive capability.

  8. High Voltage GaN Schottky Rectifiers

    Energy Technology Data Exchange (ETDEWEB)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  9. A random resistor network model of voltage trimming

    Energy Technology Data Exchange (ETDEWEB)

    Grimaldi, C [Laboratoire de Production Microtechnique, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland); Maeder, T [Laboratoire de Production Microtechnique, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland); Ryser, P [Laboratoire de Production Microtechnique, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland); Straessler, S [Laboratoire de Production Microtechnique, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne (Switzerland)

    2004-08-07

    In industrial applications, the controlled adjustment (trimming) of resistive elements via the application of high voltage pulses is a promising technique, with several advantages with respect to more classical approaches such as the laser cutting method. The microscopic processes governing the response to high voltage pulses depend on the nature of the resistor and on the interaction with the local environment. Here we provide a theoretical statistical description of voltage discharge effects on disordered composites by considering random resistor network models with different properties and processes due to the voltage discharge. We compare standard percolation results with biased percolation effects and provide a tentative explanation of the different scenarios observed during trimming processes.

  10. Automated Voltage Control in LHCb

    CERN Document Server

    Granado Cardoso, L; Jacobsson, R

    2011-01-01

    LHCb is one of the 4 LHC experiments. In order to ensure the safety of the detector and to maximize efficiency, LHCb needs to coordinate its own operations, in particular the voltage configuration of the different subdetectors, according to the accelerator status. A control software has been developed for this purpose, based on the Finite State Machine toolkit and the SCADA system used for control throughout LHCb (and the other LHC experiments). This software permits to efficiently drive both the Low Voltage (LV) and High Voltage (HV) systems of the 10 different sub-detectors that constitute LHCb, setting each sub-system to the required voltage (easily configurable at run-time) based on the accelerator state. The control software is also responsible for monitoring the state of the Sub-detector voltages and adding it to the event data in the form of status-bits. Safe and yet flexible operation of the LHCb detector has been obtained and automatic actions, triggered by the state changes of the ...

  11. Magnetic bearings with zero bias

    Science.gov (United States)

    Brown, Gerald V.; Grodsinsky, Carlos M.

    1991-01-01

    A magnetic bearing operating without a bias field has supported a shaft rotating at speeds up to 12,000 rpm with the usual four power supplies and with only two. A magnetic bearing is commonly operated with a bias current equal to half of the maximum current allowable in its coils. This linearizes the relation between net force and control current and improves the force slewing rate and hence the band width. The steady bias current dissipates power, even when no force is required from the bearing. The power wasted is equal to two-thirds of the power at maximum force output. Examined here is the zero bias idea. The advantages and disadvantages are noted.

  12. A low voltage CMOS low drop-out voltage regulator

    Science.gov (United States)

    Bakr, Salma Ali; Abbasi, Tanvir Ahmad; Abbasi, Mohammas Suhaib; Aldessouky, Mohamed Samir; Abbasi, Mohammad Usaid

    2009-05-01

    A low voltage implementation of a CMOS Low Drop-Out voltage regulator (LDO) is presented. The requirement of low voltage devices is crucial for portable devices that require extensive computations in a low power environment. The LDO is implemented in 90nm generic CMOS technology. It generates a fixed 0.8V from a 2.5V supply which on discharging goes to 1V. The buffer stage used is unity gain configured unbuffered OpAmp with rail-to-rail swing input stage. The simulation result shows that the implemented circuit provides load regulation of 0.004%/mA and line regulation of -11.09mV/V. The LDO provides full load transient response with a settling time of 5.2μs. Further, the dropout voltage is 200mV and the quiescent current through the pass transistor (Iload=0) is 20μA. The total power consumption of this LDO (excluding bandgap reference) is only 80μW.

  13. Awareness Reduces Racial Bias

    OpenAIRE

    2014-01-01

    Can raising awareness of racial bias subsequently reduce that bias? We address this question by exploiting the widespread media attention highlighting racial bias among professional basketball referees that occurred in May 2007 following the release of an academic study. Using new data, we confirm that racial bias persisted in the years after the study's original sample, but prior to the media coverage. Subsequent to the media coverage though, the bias completely disappeared. We examine poten...

  14. Compact, Lightweight, High Voltage Propellant Isolators Project

    Data.gov (United States)

    National Aeronautics and Space Administration — TA&T, Inc. proposes an enabling fabrication process for high voltage isolators required in high power solar electric and nuclear electric propulsion (SEP and...

  15. Compact, Lightweight, High Voltage Propellant Isolators Project

    Data.gov (United States)

    National Aeronautics and Space Administration — TA&T, Inc. proposes an enabling fabrication process for high voltage isolators required in high power solar electric and nuclear electric propulsion (SEP and...

  16. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  17. Spiral biasing adaptor for use in Si drift detectors and Si drift detector arrays

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zheng; Chen, Wei

    2016-07-05

    A drift detector array, preferably a silicon drift detector (SDD) array, that uses a low current biasing adaptor is disclosed. The biasing adaptor is customizable for any desired geometry of the drift detector single cell with minimum drift time of carriers. The biasing adaptor has spiral shaped ion-implants that generate the desired voltage profile. The biasing adaptor can be processed on the same wafer as the drift detector array and only one biasing adaptor chip/side is needed for one drift detector array to generate the voltage profiles on the front side and back side of the detector array.

  18. Dynamics of Fluctuations, Flows and Global Stability Under Electrode Biasing in a Linear Plasma Device

    Science.gov (United States)

    Desjardins, Tiffany

    2015-11-01

    Various bias electrodes have been inserted into the Helicon-Cathode (HelCat) device at the University of New Mexico, in order to affect intrinsic drift-wave turbulence and flows. The goal of the experiments was to suppress and effect the intrinsic turbulence and with detailed measurements, understand the changes that occur during biasing. The drift-mode in HelCat varies from coherent at low magnetic field (1kG). The first electrode consists of 6 concentric rings set in a ceramic substrate; these rings act as a boundary condition, sitting at the end of the plasma column 2-m away from the source. A negative bias has been found to have no effect on the fluctuations, but a positive bias (Vr>5Te) is required in order to suppress the drift-mode. Two molybdenum grids can also be inserted into the plasma and sit close to the source. Floating or grounding a grid results in suppressing the drift-mode of the system. A negative bias (>-5Te) is found to return the drift-mode, and it is possible to drive a once coherent mode into a broad-band turbulent one. From a bias voltage of -5Tenew mode, which is identified as a parallel-driven Kelvin-Helmholtz mode. At high positive bias, Vg>10Te, a new large-scale global mode is excited. This mode exhibits fluctuations in the ion saturation current, as well as in the potential, with a magnitude >50%. This mode has been identified as the potential relaxation instability (PRI). In order to better understand the modes and changes observed in the plasma, a linear stability code, LSS, was employed. As well, a 1D3V-PIC code utilizing Braginskii's equations was also utilized to understand the high-bias instability.

  19. Low-Voltage MOS Current Mode Logic Multiplexer

    Directory of Open Access Journals (Sweden)

    K. Gupta

    2013-04-01

    Full Text Available In this paper, a new low-voltage MOS current mode logic (MCML multiplexer based on the triple-tail cell concept is proposed. An analytical model for static parameters is formulated and is applied to develop a design approach for the proposed low-voltage MCML multiplexer. The delay of the proposed low-voltage MCML multiplexer is expressed in terms of the bias current and the voltage swing so that it can be traded off with the power consumption. The proposed low-voltage MCML multiplexer is analyzed for the three design cases namely high-speed, power-efficient, and low-power. Finally, a comparison in performance of the proposed low-voltage MCML multiplexer with the traditional MCML multiplexer is carried out for all the cases.

  20. Stray voltage mitigation

    Energy Technology Data Exchange (ETDEWEB)

    Jamali, B.; Piercy, R.; Dick, P. [Kinetrics Inc., Toronto, ON (Canada). Transmission and Distribution Technologies

    2008-04-09

    This report discussed issues related to farm stray voltage and evaluated mitigation strategies and costs for limiting voltage to farms. A 3-phase, 3-wire system with no neutral ground was used throughout North America before the 1930s. Transformers were connected phase to phase without any electrical connection between the primary and secondary sides of the transformers. Distribution voltage levels were then increased and multi-grounded neutral wires were added. The earth now forms a parallel return path for the neutral current that allows part of the neutral current to flow continuously through the earth. The arrangement is responsible for causing stray voltage. Stray voltage causes uneven milk production, increased incidences of mastitis, and can create a reluctance to drink water amongst cows when stray voltages are present. Off-farm sources of stray voltage include phase unbalances, undersized neutral wire, and high resistance splices on the neutral wire. Mitigation strategies for reducing stray voltage include phase balancing; conversion from single to 3-phase; increasing distribution voltage levels, and changing pole configurations. 22 refs., 5 tabs., 13 figs.

  1. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  2. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  3. Mitigation of Unbalanced Voltage Sags and Voltage Unbalance in CIGRE Low Voltage Distribution Network

    OpenAIRE

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar; Cecati, Carlo

    2013-01-01

    Any problem with voltage in a power network is undesirable as it aggravates the quality of the power. Power electronic devices such as Voltage Source Converter (VSC) based Static Synchronous Compensator (STATCOM) etc. can be used to mitigate the voltage problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate unbalanced voltage sags and voltage unbalance in the CIGRE Low Voltage (LV) test network and net-works like this. The voltage unbala...

  4. Plasma response to transient high voltage pulses

    Indian Academy of Sciences (India)

    S Kar; S Mukherjee

    2013-07-01

    This review reports on plasma response to transient high voltage pulses in a low pressure unmagnetized plasma. Mainly, the experiments are reviewed, when a disc electrode (metallic and dielectric) is biased pulsed negative or positive. The main aim is to review the electron loss in plasmas and particle balance during the negative pulse electrode biasing, when the applied pulse width is less than the ion plasma period. Though the applied pulse width is less than the ion plasma period, ion rarefaction waves are excited. The solitary electron holes are reviewed for positive pulsed bias to the electrode. Also the excitation of waves (solitary electron and ion holes) is reviewed for a metallic electrode covered by a dielectric material. The wave excitation during and after the pulse withdrawal, excitation and propagation characteristics of various electrostatic plasma waves are reviewed here.

  5. 46 CFR 111.01-17 - Voltage and frequency variations.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Voltage and frequency variations. 111.01-17 Section 111... ELECTRIC SYSTEMS-GENERAL REQUIREMENTS General § 111.01-17 Voltage and frequency variations. Unless... and +6 percent to −10 percent of rated voltage. This limitation does not address transient conditions....

  6. Low voltage electron beam accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Ochi, Masafumi [Iwasaki Electric Co., Ltd., Tokyo (Japan)

    2003-02-01

    Widely used electron accelerators in industries are the electron beams with acceleration voltage at 300 kV or less. The typical examples are shown on manufactures in Japan, equipment configuration, operation, determination of process parameters, and basic maintenance requirement of the electron beam processors. New electron beam processors with acceleration voltage around 100 kV were introduced maintaining the relatively high dose speed capability of around 10,000 kGy x mpm at production by ESI (Energy Science Inc. USA, Iwasaki Electric Group). The application field like printing and coating for packaging requires treating thickness of 30 micron or less. It does not require high voltage over 110 kV. Also recently developed is a miniature bulb type electron beam tube with energy less than 60 kV. The new application area for this new electron beam tube is being searched. The drive force of this technology to spread in the industries would be further development of new application, process and market as well as the price reduction of the equipment, upon which further acknowledgement and acceptance of the technology to societies and industries would entirely depend. (Y. Tanaka)

  7. Precise method for determining avalanche breakdown voltage of silicon photomultipliers

    Science.gov (United States)

    Chirikov-Zorin, I.

    2017-07-01

    A physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDErel) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDErel value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts.

  8. Pulsed Plasma with Synchronous Boundary Voltage for Rapid Atomic Layer Etching

    Energy Technology Data Exchange (ETDEWEB)

    Economou, Demetre J.; Donnelly, Vincent M.

    2014-05-13

    Atomic Layer ETching (ALET) of a solid with monolayer precision is a critical requirement for advancing nanoscience and nanotechnology. Current plasma etching techniques do not have the level of control or damage-free nature that is needed for patterning delicate sub-20 nm structures. In addition, conventional ALET, based on pulsed gases with long reactant adsorption and purging steps, is very slow. In this work, novel pulsed plasma methods with synchronous substrate and/or “boundary electrode” bias were developed for highly selective, rapid ALET. Pulsed plasma and tailored bias voltage waveforms provided controlled ion energy and narrow energy spread, which are critical for highly selective and damage-free etching. The broad goal of the project was to investigate the plasma science and engineering that will lead to rapid ALET with monolayer precision. A combined experimental-simulation study was employed to achieve this goal.

  9. Voltage verification unit

    Science.gov (United States)

    Martin, Edward J.

    2008-01-15

    A voltage verification unit and method for determining the absence of potentially dangerous potentials within a power supply enclosure without Mode 2 work is disclosed. With this device and method, a qualified worker, following a relatively simple protocol that involves a function test (hot, cold, hot) of the voltage verification unit before Lock Out/Tag Out and, and once the Lock Out/Tag Out is completed, testing or "trying" by simply reading a display on the voltage verification unit can be accomplished without exposure of the operator to the interior of the voltage supply enclosure. According to a preferred embodiment, the voltage verification unit includes test leads to allow diagnostics with other meters, without the necessity of accessing potentially dangerous bus bars or the like.

  10. Optical voltage sensors: principle, problem and research proposal

    Science.gov (United States)

    Li, Changsheng

    2016-10-01

    Sensing principles and main problems to be solved for optical voltage sensors are briefly reviewed. Optical effects used for voltage sensing usually include electro-optic Pockels and Kerr effects, electro-gyration effect, elasto-optical effect, and electroluminescent effects, etc. In principle, typical optical voltage sensor is based on electro-optic Pockels crystals and closed-loop signal detection scheme. Main problems to be solved for optical voltage sensors include: how to remove influence of unwanted multiple optical effects on voltage sensing performance; how to select or develop a proper voltage sensing material and element; how to keep optical phase bias to be stable under temperature fluctuation and vibration; how to achieve dc voltage sensing, etc. In order to suppress the influence of unwanted optical effects and light beam coupling-related loss on voltage sensing signals, we may pay more attention to all-fiber and waveguide voltage sensors. Voltage sensors based on electroluminescent effects are also promising in some application fields due to their compact configuration, low cost and potential long-term reliability.

  11. Reduced Voltage Scaling in Clock Distribution Networks

    Directory of Open Access Journals (Sweden)

    Khader Mohammad

    2009-01-01

    Full Text Available We propose a novel circuit technique to generate a reduced voltage swing (RVS signals for active power reduction on main buses and clocks. This is achieved without performance degradation, without extra power supply requirement, and with minimum area overhead. The technique stops the discharge path on the net that is swinging low at a certain voltage value. It reduces active power on the target net by as much as 33% compared to traditional full swing signaling. The logic 0 voltage value is programmable through control bits. If desired, the reduced-swing mode can also be disabled. The approach assumes that the logic 0 voltage value is always less than the threshold voltage of the nMOS receivers, which eliminate the need of the low to high voltage translation. The reduced noise margin and the increased leakage on the receiver transistors using this approach have been addressed through the selective usage of multithreshold voltage (MTV devices and the programmability of the low voltage value.

  12. A 5 V-to-3.3 V CMOS Linear Regulator with Three-Output Temperature-Independent Reference Voltages

    Directory of Open Access Journals (Sweden)

    San-Fu Wang

    2016-01-01

    Full Text Available This paper presents a 5 V-to-3.3 V linear regulator circuit, which uses 3.3 V CMOS transistors to replace the 5 V CMOS transistors. Thus, the complexity of the manufacturing semiconductor process can be improved. The proposed linear regulator is implemented by cascode architecture, which requires three different reference voltages as the bias voltages of its circuit. Thus, the three-output temperature-independent reference voltage circuit is proposed, which provides three accurate reference voltages simultaneously. The three-output temperature-independent reference voltages also can be used in other circuits of the chip. By using the proposed temperature-independent reference voltages, the proposed linear regulator can provide an accurate output voltage, and it is suitable for low cost, small size, and highly integrated system-on-chip (SoC applications. Moreover, the proposed linear regulator uses the cascode technique, which improves both the gain performance and the isolation performance. Therefore, the proposed linear regulator has a good performance in reference voltage to output voltage isolation. The voltage variation of the linear regulator is less than 2.153% in the temperature range of −40°C–120°C, and the power supply rejection ratio (PSRR is less than −42.8 dB at 60 Hz. The regulator can support 0~200 mA output current. The core area is less than 0.16 mm2.

  13. Diffusion voltage in polymer light emitting diodes measured with electric field induced second harmonic generation

    Science.gov (United States)

    Kristensen, P. K.; Rafaelsen, J.; Pedersen, T. G.; Pedersen, K.

    2005-12-01

    We apply electric field induced second harmonic (EFISH) to polymer light emitting diodes (PLEDs) and demonstrate the ability to determine the diffusion voltage in PLED devices. The EFISH signal is proportional to the square of the effective field, which is the sum of the diffusion voltage and the applied voltage. By minimizing the EFISH-signal as a function of the applied voltage, the diffusion voltage is determined by measuring the applied voltage that cancels out the diffusion voltage. The PLEDs are fabricated with indium tin oxide (ITO) as the hole injecting contact and two different electron injecting contacts, namely aluminum and calcium. The diffusion voltage originates from the rearranged charges caused by the difference in Fermi levels in the materials in the PLEDs. Different contacts will thus cause different diffusion voltages. We demonstrate here that the EFISH signal is proportional to the square of the effective field in both reverse and forward bias, and discuss the dependence on contact materials.

  14. Voltage Mode-to-Current Mode Transformation

    Directory of Open Access Journals (Sweden)

    Tejmal S. Rathore

    2012-10-01

    Full Text Available This paper proposes a procedure for converting a class of Op Amp-, FTFN-, CC- and CFAbased voltage mode circuits to corresponding current mode circuits without requiring any additional circuit elements and finally from Op Amp-based voltage mode circuits to any of the FTFN, CC and CFA current mode circuits. The latter circuits perform better at high frequency than the former ones. The validity of the transformation has been checked on simulated circuits with PSPICE.

  15. Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical, high voltage GaN diodes

    Science.gov (United States)

    Vizkelethy, G.; King, M. P.; Aktas, O.; Kizilyalli, I. C.; Kaplar, R. J.

    2017-08-01

    Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories' nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. The displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.

  16. Nonlinear resonance converse magnetoelectric effect modulated by voltage for the symmetrical magnetoelectric laminates under magnetic and thermal loadings

    Science.gov (United States)

    Zhou, Hao-Miao; Liu, Hui; Zhou, Yun; Hu, Wen-Wen

    2016-12-01

    Based on the tri-layer symmetrical magnetoelectric laminates, a equivalent circuit for the nonlinear resonance converse magnetoelectric coupling effect is established. Because the nonlinear thermo-magneto-mechanical constitutive equations of magnetostrictive material were introduced, a converse magnetoelectric coefficient model was derived from the equivalent circuit, which can describe the influence of bias electric field, bias magnetic field and ambient temperature on the resonance converse magnetoelectric coupling effect. Especially, the model can well predict the modulation effect of bias electric field/voltage on the magnetism of magnetoelectric composite or the converse magnetoelectric coefficient, which is absolutely vital in applications. Both of the converse magnetoelectric coefficient and the resonance frequency predicted by the model have good agreements with the existing experimental results in qualitatively and quantitatively, and the validity of the model is confirmed. On this basis, according to the model, the nonlinear trends of the resonance converse magnetoelectric effect under different bias voltages, bias magnetic fields and ambient temperatures are predicted. From the results, it can be found that the bias voltage can effectively modulate the curve of the resonance converse magnetoelectric coefficient versus bias magnetic field, and then change the corresponding optimal bias magnetic field of the maximum converse magnetoelectric coefficient; with the increasing volume ratio of piezoelectric layers, the modulation effect of bias voltage becomes more obvious; under different bias magnetic fields, the modulation effect of bias voltage on the converse magnetoelectric effect has nonvolatility in a wide temperature region.

  17. L{sub p} norm approaches for estimating voltage flicker

    Energy Technology Data Exchange (ETDEWEB)

    Inan, Aslan [Department of Electrical Engineering, Faculty of Electrical-Electronics, Yildiz Technical University, Istanbul (Turkey); Bakroun, Maher [Antrim Crescent, Toronto, Ontario (Canada); Heydt, Gerald T. [Fulton School of Engineering, Arizona State University, Tempe, AZ (United States)

    2010-12-15

    It is important to accurately estimate instantaneous voltage flicker magnitudes and frequencies in order to correctly evaluate voltage fluctuations. Voltage flicker is a problem in electric power quality. Different approaches used to determine the magnitude of the voltage flicker have been presented: measurement methods generally use a flickermeter device. Simulation methods require a computer model of the disturbing load and the flickermeter. Calculation methods necessitate a simplified empirical formula. Estimation algorithms are based on the estimation of the voltage flicker components. In this paper, two models of voltage flicker are discussed: L{sub p} estimation algorithms utilizing L{sub 1}, L{sub 2} and L{sub {infinity}} norms are used to estimate the voltage magnitudes of the flicker signals as well as the fundamental voltage magnitude. The main result is that it is possible to design an L{sub p} estimator to identify flicker frequency and amplitude from time series measurements. (author)

  18. Bias-dependent oscillatory electron transport of monatomic sulfur chains

    KAUST Repository

    Yu, Jing-Xin

    2012-01-01

    The bias-dependent oscillatory electron transport of monatomic sulfur chains sandwiched between gold electrodes is investigated with density functional theory and non-equilibrium Green\\'s function method. At zero bias, in contrast to the typical odd-even oscillations observed in most metallic chains, we find that the conductance oscillates with a period of four atoms. However, as the bias voltage is increased the current displays a two-atom periodicity. This emerges gradually, first for the longer chains and then, at voltages larger than 0.7 V, for lengths. The oscillatory behaviors are analyzed by the density of states and the energy-dependent and bias-dependent transmission coefficients. © 2012 American Institute of Physics.

  19. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  20. The physics of positively biased conductors surrounded by dielectrics in contact with a plasma

    Science.gov (United States)

    Hastings, Daniel E.; Chang, Patrick

    1989-01-01

    The physics of a positively biased conductor surrounded by dielectrics in contact with plasma is investigated. It is shown that because of the presence of secondary emission from the surrounding dielectrics, the voltage of the surfaces near the conductor has three solutions. The high- and low-voltage solutions are stable, while the intermediate-voltage solution is unstable. This theory is applied to explain the snapover effect observed on high-voltage solar arrays that involve the use of highly biased surfaces in contact with the space environment.

  1. CPI Bias in Korea

    Directory of Open Access Journals (Sweden)

    Chul Chung

    2007-12-01

    Full Text Available We estimate the CPI bias in Korea by employing the approach of Engel’s Law as suggested by Hamilton (2001. This paper is the first attempt to estimate the bias using Korean panel data, Korean Labor and Income Panel Study(KLIPS. Following Hamilton’s model with non­linear specification correction, our estimation result shows that the cumulative CPI bias over the sample period (2000-2005 was 0.7 percent annually. This CPI bias implies that about 21 percent of the inflation rate during the period can be attributed to the bias. In light of purchasing power parity, we provide an interpretation of the estimated bias.

  2. Bias in research.

    Science.gov (United States)

    Simundić, Ana-Maria

    2013-01-01

    By writing scientific articles we communicate science among colleagues and peers. By doing this, it is our responsibility to adhere to some basic principles like transparency and accuracy. Authors, journal editors and reviewers need to be concerned about the quality of the work submitted for publication and ensure that only studies which have been designed, conducted and reported in a transparent way, honestly and without any deviation from the truth get to be published. Any such trend or deviation from the truth in data collection, analysis, interpretation and publication is called bias. Bias in research can occur either intentionally or unintentionally. Bias causes false conclusions and is potentially misleading. Therefore, it is immoral and unethical to conduct biased research. Every scientist should thus be aware of all potential sources of bias and undertake all possible actions to reduce or minimize the deviation from the truth. This article describes some basic issues related to bias in research.

  3. Biasing vector network analyzers using variable frequency and amplitude signals

    Science.gov (United States)

    Nobles, J. E.; Zagorodnii, V.; Hutchison, A.; Celinski, Z.

    2016-08-01

    We report the development of a test setup designed to provide a variable frequency biasing signal to a vector network analyzer (VNA). The test setup is currently used for the testing of liquid crystal (LC) based devices in the microwave region. The use of an AC bias for LC based devices minimizes the negative effects associated with ionic impurities in the media encountered with DC biasing. The test setup utilizes bias tees on the VNA test station to inject the bias signal. The square wave biasing signal is variable from 0.5 to 36.0 V peak-to-peak (VPP) with a frequency range of DC to 10 kHz. The test setup protects the VNA from transient processes, voltage spikes, and high-frequency leakage. Additionally, the signals to the VNA are fused to ½ amp and clipped to a maximum of 36 VPP based on bias tee limitations. This setup allows us to measure S-parameters as a function of both the voltage and the frequency of the applied bias signal.

  4. On commercial media bias

    OpenAIRE

    Germano, Fabrizio

    2008-01-01

    Within the spokes model of Chen and Riordan (2007) that allows for non-localized competition among arbitrary numbers of media outlets, we quantify the effect of concentration of ownership on quality and bias of media content. A main result shows that too few commercial outlets, or better, too few separate owners of commercial outlets can lead to substantial bias in equilibrium. Increasing the number of outlets (commercial and non-commercial) tends to bring down this bias; but the strongest ef...

  5. Interpretation biases in paranoia.

    Science.gov (United States)

    Savulich, George; Freeman, Daniel; Shergill, Sukhi; Yiend, Jenny

    2015-01-01

    Information in the environment is frequently ambiguous in meaning. Emotional ambiguity, such as the stare of a stranger, or the scream of a child, encompasses possible good or bad emotional consequences. Those with elevated vulnerability to affective disorders tend to interpret such material more negatively than those without, a phenomenon known as "negative interpretation bias." In this study we examined the relationship between vulnerability to psychosis, measured by trait paranoia, and interpretation bias. One set of material permitted broadly positive/negative (valenced) interpretations, while another allowed more or less paranoid interpretations, allowing us to also investigate the content specificity of interpretation biases associated with paranoia. Regression analyses (n=70) revealed that trait paranoia, trait anxiety, and cognitive inflexibility predicted paranoid interpretation bias, whereas trait anxiety and cognitive inflexibility predicted negative interpretation bias. In a group comparison those with high levels of trait paranoia were negatively biased in their interpretations of ambiguous information relative to those with low trait paranoia, and this effect was most pronounced for material directly related to paranoid concerns. Together these data suggest that a negative interpretation bias occurs in those with elevated vulnerability to paranoia, and that this bias may be strongest for material matching paranoid beliefs. We conclude that content-specific biases may be important in the cause and maintenance of paranoid symptoms.

  6. Device for monitoring cell voltage

    Science.gov (United States)

    Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

    2012-08-21

    A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

  7. High voltage pulse generator

    Science.gov (United States)

    Fasching, George E.

    1977-03-08

    An improved high-voltage pulse generator has been provided which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of a first one of the rectifiers connected between the first and second of the plurality of charging capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. Alternate circuits are provided for controlling the application of the charging voltage from a charging circuit to be applied to the parallel capacitors which provides a selection of at least two different intervals in which the charging voltage is turned "off" to allow the SCR's connecting the capacitors in series to turn "off" before recharging begins. The high-voltage pulse-generating circuit including the N capacitors and corresponding SCR's which connect the capacitors in series when triggered "on" further includes diodes and series-connected inductors between the parallel-connected charging capacitors which allow sufficiently fast charging of the capacitors for a high pulse repetition rate and yet allow considerable control of the decay time of the high-voltage pulses from the pulse-generating circuit.

  8. Zero-voltage nondegenerate parametric mode in Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig

    1976-01-01

    A new parametric mode in a Josephson tunnel junction biased in the zero-voltage mode is suggested. It is a nondegenerate parametric excitation where the junction plasma resonance represents the input circuit, and a junction geometrical resonance represents the idler circuit. This nondegenerate mo...... for such a coupling. Journal of Applied Physics is copyrighted by The American Institute of Physics....

  9. Control of ion energy and angular distributions using voltage waveform

    Energy Technology Data Exchange (ETDEWEB)

    Rauf, S.

    1999-07-01

    A number of plasma-aided microelectronics manufacturing processes sensitively depend on the ion characteristics at the substrate, in particular the ion energy (IEDF) and angular (IADF) distribution functions. The outcome of these processes can be much more precisely controlled if one has direct control over the IEDFs and IADFs. Past studies have explored the influence of rb bias voltage amplitude and frequency, inductive power deposition and gas pressure on the ion characteristics at the substrate. The factor that influences the ion dynamics most is however the time-dependent sheath voltage and, as demonstrated in this paper, sheath voltage can be accurately controlled using the rf bias voltage waveform. In this paper, the authors computationally examine the influence of the rf bias voltage waveform on the IEDFs and IADFs at the substrate in an inductively coupled plasma (ICP) reactor. This study has been conducted using a coupled set of the Hybrid Plasma Equipment Model (HPEM) and a circuit model, and the Plasma Chemistry Monte Carlo Simulation (PCMCS).

  10. Improving transition voltage spectroscopy of molecular junctions

    Science.gov (United States)

    Markussen, Troels; Chen, Jingzhe; Thygesen, Kristian S.

    2011-04-01

    Transition voltage spectroscopy (TVS) is a promising spectroscopic tool for molecular junctions. The principles in TVS is to find the minimum on a Fowler-Nordheim plot where ln(I/V2) is plotted against 1/V and relate the voltage at the minimum Vmin to the closest molecular level. Importantly, Vmin is approximately half the voltage required to see a peak in the dI/dV curve. Information about the molecular level position can thus be obtained at relatively low voltages. In this work we show that the molecular level position can be determined at even lower voltages, Vmin(α), by finding the minimum of ln(I/Vα) with α<2. On the basis of a simple Lorentzian transmission model we analyze theoretical ab initio as well as experimental I-V curves and show that the voltage required to determine the molecular levels can be reduced by ~30% as compared to conventional TVS. As for conventional TVS, the symmetry/asymmetry of the molecular junction needs to be taken into account in order to gain quantitative information. We show that the degree of asymmetry may be estimated from a plot of Vmin(α) vs α.

  11. Fuel Cell/Electrochemical Cell Voltage Monitor

    Science.gov (United States)

    Vasquez, Arturo

    2012-01-01

    A concept has been developed for a new fuel cell individual-cell-voltage monitor that can be directly connected to a multi-cell fuel cell stack for direct substack power provisioning. It can also provide voltage isolation for applications in high-voltage fuel cell stacks. The technology consists of basic modules, each with an 8- to 16-cell input electrical measurement connection port. For each basic module, a power input connection would be provided for direct connection to a sub-stack of fuel cells in series within the larger stack. This power connection would allow for module power to be available in the range of 9-15 volts DC. The relatively low voltage differences that the module would encounter from the input electrical measurement connection port, coupled with the fact that the module's operating power is supplied by the same substack voltage input (and so will be at similar voltage), provides for elimination of high-commonmode voltage issues within each module. Within each module, there would be options for analog-to-digital conversion and data transfer schemes. Each module would also include a data-output/communication port. Each of these ports would be required to be either non-electrical (e.g., optically isolated) or electrically isolated. This is necessary to account for the fact that the plurality of modules attached to the stack will normally be at a range of voltages approaching the full range of the fuel cell stack operating voltages. A communications/ data bus could interface with the several basic modules. Options have been identified for command inputs from the spacecraft vehicle controller, and for output-status/data feeds to the vehicle.

  12. Ion energy distributions in bipolar pulsed-dc discharges of methane measured at the biased cathode

    Energy Technology Data Exchange (ETDEWEB)

    Corbella, C; Rubio-Roy, M; Bertran, E; Portal, S; Pascual, E; Polo, M C; Andujar, J L, E-mail: corbella@ub.edu [FEMAN Group, IN2UB, Departament de Fisica Aplicada i Optica, Universitat de Barcelona, c/ MartI i Franques 1, 08028 Barcelona (Spain)

    2011-02-15

    The ion fluxes and ion energy distributions (IED) corresponding to discharges in methane (CH{sub 4}) were measured in time-averaged mode with a compact retarding field energy analyser (RFEA). The RFEA was placed on a biased electrode at room temperature, which was powered by either radiofrequency (13.56 MHz) or asymmetric bipolar pulsed-dc (250 kHz) signals. The shape of the resulting IED showed the relevant populations of ions bombarding the cathode at discharge parameters typical in the material processing technology: working pressures ranging from 1 to 10 Pa and cathode bias voltages between 100 and 200 V. High-energy peaks in the IED were detected at low pressures, whereas low-energy populations became progressively dominant at higher pressures. This effect is attributed to the transition from collisionless to collisional regimes of the cathode sheath as the pressure increases. On the other hand, pulsed-dc plasmas showed broader IED than RF discharges. This fact is connected to the different working frequencies and the intense peak voltages (up to 450 V) driven by the pulsed power supply. This work improves our understanding in plasma processes at the cathode level, which are of crucial importance for the growth and processing of materials requiring controlled ion bombardment. Examples of industrial applications with these requirements are plasma cleaning, ion etching processes during fabrication of microelectronic devices and plasma-enhanced chemical vapour deposition of hard coatings (diamond-like carbon, carbides and nitrides).

  13. Graphene nanoribbon devices at high bias

    Science.gov (United States)

    Han, Melinda Y.; Kim, Philip

    2014-02-01

    We present the electron transport in graphene nanoribbons (GNRs) at high electric bias conduction. When graphene is patterned into a few tens of nanometer width of a ribbon shape, the carriers are confined to a quasi-one-dimensional (1D) system. Combining with the disorders in the system, this quantum confinement can lead into a transport gap in the energy spectrum of the GNRs. Similar to CNTs, this gap depends on the width of the GNR. In this review, we examine the electronic properties of lithographically fabricated GNRs, focusing on the high bias transport characteristics of GNRs as a function of density tuned by a gate voltage. We investigate the transport behavior of devices biased up to a few volts, a regime more relevant for electronics applications. We find that the high bias transport behavior in this limit can be described by hot electron scattered by the surface phonon emission, leading to a carrier velocity saturation. We also showed an enhanced current saturation effect in the GNRs with an efficient gate coupling. This effect results from the introduction of the charge neutrality point into the channel, and is similar to pinch-off in MOSFET devices. We also observe that heating effects in graphene at high bias are significant.

  14. Voltage Mode Universal Biquad Using CCCII

    Directory of Open Access Journals (Sweden)

    Ashish Ranjan

    2011-01-01

    Full Text Available This paper proposes a multi-input single-output (MISO second-order active-C voltage mode (VM universal filter using two second-generation current-controlled current conveyors (CCCIIs and two equal-valued capacitors. The proposed circuit realizes low pass, band pass, high pass, all pass, and notch responses from the same topology. The filter uses-minimum number of passive components and no resistor which is suitable for IC Design. The filter enjoys low-sensitivity performance and exhibits electronic and orthogonal tunability of pole frequency (0 and quality factor (0 via bias current of CCCIIs. PSPICE simulation results confirm the theory.

  15. Political bias is tenacious.

    Science.gov (United States)

    Ditto, Peter H; Wojcik, Sean P; Chen, Eric Evan; Grady, Rebecca Hofstein; Ringel, Megan M

    2015-01-01

    Duarte et al. are right to worry about political bias in social psychology but they underestimate the ease of correcting it. Both liberals and conservatives show partisan bias that often worsens with cognitive sophistication. More non-liberals in social psychology is unlikely to speed our convergence upon the truth, although it may broaden the questions we ask and the data we collect.

  16. Biases in categorization

    NARCIS (Netherlands)

    Das-Smaal, E.A.

    1990-01-01

    On what grounds can we conclude that an act of categorization is biased? In this chapter, it is contended that in the absence of objective norms of what categories actually are, biases in categorization can only be specified in relation to theoretical understandings of categorization. Therefore, the

  17. Eulerian bias and the galaxy density field

    CERN Document Server

    Mann, B M; Heavens, A F; Mann, Bob; Peacock, John; Heavens, Alan

    1997-01-01

    We investigate the effects on cosmological clustering statistics of empirical biasing, where the galaxy distribution is a local transformation of the present-day Eulerian density field. The effects of the suppression of galaxy numbers in voids, and their enhancement in regions of high density, are considered, independently and in combination. We compare results from numerical simulations with the predictions of simple analytic models. We find that the bias is generally scale-dependent, so that the shape of the galaxy power spectrum differs from that of the underlying mass distribution. The degree of bias is always a monotonic function of scale, tending to an asymptotic value on scales where the density fluctuations are linear. The scale dependence is often rather weak, with many reasonable prescriptions giving a bias which is nearly independent of scale. We have investigated whether such an Eulerian bias can reconcile a range of theoretical power spectra with the twin requirements of fitting the galaxy power ...

  18. Voltage Regulators for Photovoltaic Systems

    Science.gov (United States)

    Delombard, R.

    1986-01-01

    Two simple circuits developed to provide voltage regulation for highvoltage (i.e., is greater than 75 volts) and low-voltage (i.e., is less than 36 volts) photovoltaic/battery power systems. Use of these circuits results in voltage regulator small, low-cost, and reliable, with very low power dissipation. Simple oscillator circuit controls photovoltaic-array current to regulate system voltage and control battery charging. Circuit senses battery (and system) voltage and adjusts array current to keep battery voltage from exceeding maximum voltage.

  19. Nonlinear Parasitic Capacitance Modelling of High Voltage Power MOSFETs in Partial SOI Process

    DEFF Research Database (Denmark)

    Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    : off-state, sub-threshold region, and on-state in the linear region. A high voltage power MOSFET is designed in a partial Silicon on Insulator (SOI) process, with the bulk as a separate terminal. 3D plots and contour plots of the capacitances versus bias voltages for the transistor summarize...

  20. Tunable sensor response by voltage-control in biomimetic hair flow sensors

    NARCIS (Netherlands)

    Droogendijk, H.; Krijnen, G.J.M.

    2012-01-01

    We report improvements in detection limit and responsivity of biomimetic hair flow sensors by electrostatic spring-softening (ESS). Applying a DC-bias voltage to our capacitive flow sensors mediates large (80% and more) voltage-controlled electromechanical amplification of the flow signal for freque

  1. Tunable sensor response by voltage-control in biomimetic hair flow sensors

    NARCIS (Netherlands)

    Droogendijk, H.; Krijnen, G.J.M.

    2012-01-01

    We report improvements in detection limit and responsivity of biomimetic hair flow sensors by electrostatic spring-softening (ESS). Applying a DC-bias voltage to our capacitive flow sensors mediates large (80% and more) voltage-controlled electro-mechanical amplification of the flow signal for frequ

  2. Low voltage excess noise and shot noise in YBCO bicrystal junctions

    DEFF Research Database (Denmark)

    Constantinian, K.Y.; Ovsyannikov, G.A.; Borisenko, I.V.;

    2002-01-01

    The spectral density of background noise emitted by symmetric bicrystal YBaCuO Josephson junctions on sapphire substrates have been measured by a low noise cooled HEMT amplifier for bias voltages up to V approximate to 50 mV. At relatively low voltages V <4 mV a noticeable noise rise has been reg...

  3. 30 CFR 18.53 - High-voltage longwall mining systems.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage longwall mining systems. 18.53... and Design Requirements § 18.53 High-voltage longwall mining systems. (a) In each high-voltage motor-starter enclosure, with the exception of a controller on a high-voltage shearer, the disconnect...

  4. Studying Voltage Transformer Ferroresonance

    Directory of Open Access Journals (Sweden)

    Hamid Radmanesh

    2012-09-01

    Full Text Available This study studies the effect of Circuit Breaker Shunt Resistance (CBSR, Metal Oxide Vaistor (MOV and Neutral earth Resistance (NR on the control of ferroresonance in the voltage transformer. It is expected that NR can controlled ferroresonance better than MOV and CBSR. Study has been done on a one phase voltage transformer rated 100 VA, 275 kV. The simulation results reveal that considering the CBSR and MOV exhibits a great mitigating effect on ferroresonance overvoltages, but these resistances cannot control these phenomena for all range of parameters. By applying NR to the system structure, ferroresonance has been controlled and its amplitude has been damped for all parameters values.

  5. Large format voltage tunable dual-band QWIP FPAs

    Science.gov (United States)

    Arslan, Y.; Eker, S. U.; Kaldirim, M.; Besikci, C.

    2009-11-01

    Third generation thermal imagers with dual/multi-band operation capability are the prominent focus of the current research in the field of infrared detection. Dual band quantum-well infrared photodetector (QWIP) focal plane arrays (FPAs) based on various detection and fabrication approaches have been reported. One of these approaches is the three-contact design allowing simultaneous integration of the signals in both bands. However, this approach requires three In bumps on each pixel leading to a complicated fabrication process and lower fill factor. If the spectral response of a two-stack QWIP structure can effectively be shifted between two spectral bands with the applied bias, dual band sensors can be implemented with the conventional FPA fabrication process requiring only one In bump on each pixel making it possible to fabricate large format dual band FPAs at the cost and yield of single band detectors. While some disadvantages of this technique have been discussed in the literature, the detailed assessment of this approach has not been performed at the FPA level yet. We report the characteristics of a large format (640 × 512) voltage tunable dual-band QWIP FPA constructed through series connection of MWIR AlGaAs-InGaAs and LWIR AlGaAs-GaAs multi-quantum well stacks, and provide a detailed assessment of the potential of this approach at both pixel and FPA levels. The dual band FPA having MWIR and LWIR cut-off wavelengths of 5.1 and 8.9 μm provided noise equivalent temperature differences as low as 14 and 31 mK ( f/1.5) with switching voltages within the limits applicable by commercial read-out integrated circuits. The results demonstrate the promise of the approach for achieving large format low cost dual band FPAs.

  6. Design and test of component circuits of an integrated quantum voltage noise source for Johnson noise thermometry

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Takahiro, E-mail: yamada-takahiro@aist.go.jp [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568 (Japan); Maezawa, Masaaki [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568 (Japan); Urano, Chiharu [National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Central 3, Umezono 1-1-1, Tsukuba, Ibaraki 305-8563 (Japan)

    2015-11-15

    Highlights: • We demonstrated RSFQ digital components of a new quantum voltage noise source. • A pseudo-random number generator and variable pulse number multiplier are designed. • Fabrication process is based on four Nb wiring layers and Nb/AlOx/Nb junctions. • The circuits successfully operated with wide dc bias current margins, 80–120%. - Abstract: We present design and testing of a pseudo-random number generator (PRNG) and a variable pulse number multiplier (VPNM) which are digital circuit subsystems in an integrated quantum voltage noise source for Jonson noise thermometry. Well-defined, calculable pseudo-random patterns of single flux quantum pulses are synthesized with the PRNG and multiplied digitally with the VPNM. The circuit implementation on rapid single flux quantum technology required practical circuit scales and bias currents, 279 junctions and 33 mA for the PRNG, and 1677 junctions and 218 mA for the VPNM. We confirmed the circuit operation with sufficiently wide margins, 80–120%, with respect to the designed bias currents.

  7. Reverse bias protected solar array with integrated bypass battery

    Science.gov (United States)

    Landis, Geoffrey A (Inventor)

    2012-01-01

    A method for protecting the photovoltaic cells in a photovoltaic (PV) array from reverse bias damage by utilizing a rechargeable battery for bypassing current from a shaded photovoltaic cell or group of cells, avoiding the need for a bypass diode. Further, the method mitigates the voltage degradation of a PV array caused by shaded cells.

  8. VOLTAGE REGULATORS ASYNCHRONOUS GENERATORS

    Directory of Open Access Journals (Sweden)

    Grigorash O. V.

    2015-06-01

    Full Text Available A promising is currently the use of asynchronous generators with capacitive excitation as a source of electricity in stand-alone power systems. Drive asynchronous generators may exercise as a thermal engine and wind wheel wind power plant or turbines of small hydropower plants. The article discusses the structural and schematics of voltage stabilizers and frequency of asynchronous generators with improved operational and technical specifications. Technical novelty of design solutions of the magnetic system and stabilizers asynchronous generator of electricity parameters confirmed by the patents for the invention of the Russian Federation. The proposed technical solution voltage stabilizer asynchronous generators, can reduce the weight of the block capacitors excitation and reactive power compensation, as well as to simplify the control system power circuit which has less power electronic devices. For wind power plants it is an important issue not only to stabilize the voltage of the generator, but also the frequency of the current. Recommend functionality stabilizer schemes parameters of electric power made for direct frequency converters with artificial and natural switching power electronic devices. It is also proposed as part of stabilization systems use single-phase voltage, three-phase transformers with rotating magnetic field, reduce the level of electromagnetic interference generated by power electronic devices for switching, enhance the efficiency and reliability of the stabilizer.

  9. Geomagnetism and Induced Voltage

    Science.gov (United States)

    Abdul-Razzaq, W.; Biller, R. D.

    2010-01-01

    Introductory physics laboratories have seen an influx of "conceptual integrated science" over time in their classrooms with elements of other sciences such as chemistry, biology, Earth science, and astronomy. We describe a laboratory to introduce this development, as it attracts attention to the voltage induced in the human brain as it…

  10. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  11. An Optoelectronic High-voltage Probe for Measuring Impulse Voltage Distribution of HVDC Converter Valve

    Institute of Scientific and Technical Information of China (English)

    方志; 邱毓昌

    2007-01-01

    A high-voltage optoelectronic probe is developed for measuring impulse voltage distribution along thyristor units in the HVDC converter valve. The dimension of the resistive voltage divider is optimized by means of numerical compttation of electric field. A pulse frequency modulation (PFM) mode is adopted for the data transmission link because of its immunity to high-intensity electromagnetic interference. Experimental results indicate that the linearity deviation for the whole measuring system is within ± 0.15 %, and therefore it can meet requirements specified by IEC60700-1.

  12. TiN coated aluminum electrodes for DC high voltage electron guns

    Energy Technology Data Exchange (ETDEWEB)

    Mamun, Md Abdullah A.; Elmustafa, Abdelmageed A., E-mail: aelmusta@odu.edu [Department of Mechanical and Aerospace Engineering, Old Dominion University, Norfolk, Virginia 23529 and The Applied Research Center, Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606 (United States); Taus, Rhys [Department of Physics, Loyola Marymount University, Los Angeles, California 90045 (United States); Forman, Eric; Poelker, Matthew [Thomas Jefferson National Accelerator Facility, Newport News, Virginia 23606 (United States)

    2015-05-15

    Preparing electrodes made of metals like stainless steel, for use inside DC high voltage electron guns, is a labor-intensive and time-consuming process. In this paper, the authors report the exceptional high voltage performance of aluminum electrodes coated with hard titanium nitride (TiN). The aluminum electrodes were comparatively easy to manufacture and required only hours of mechanical polishing using silicon carbide paper, prior to coating with TiN by a commercial vendor. The high voltage performance of three TiN-coated aluminum electrodes, before and after gas conditioning with helium, was compared to that of bare aluminum electrodes, and electrodes manufactured from titanium alloy (Ti-6Al-4V). Following gas conditioning, each TiN-coated aluminum electrode reached −225 kV bias voltage while generating less than 100 pA of field emission (<10 pA) using a 40 mm cathode/anode gap, corresponding to field strength of 13.7 MV/m. Smaller gaps were studied to evaluate electrode performance at higher field strength with the best performing TiN-coated aluminum electrode reaching ∼22.5 MV/m with field emission less than 100 pA. These results were comparable to those obtained from our best-performing electrodes manufactured from stainless steel, titanium alloy and niobium, as reported in references cited below. The TiN coating provided a very smooth surface and with mechanical properties of the coating (hardness and modulus) superior to those of stainless steel, titanium-alloy, and niobium electrodes. These features likely contributed to the improved high voltage performance of the TiN-coated aluminum electrodes.

  13. Media Bias and Reputation

    OpenAIRE

    Matthew Gentzkow; Jesse M. Shapiro

    2005-01-01

    A Bayesian consumer who is uncertain about the quality of an information source will infer that the source is of higher quality when its reports conform to the consumer's prior expectations. We use this fact to build a model of media bias in which firms slant their reports toward the prior beliefs of their customers in order to build a reputation for quality. Bias emerges in our model even though it can make all market participants worse off. The model predicts that bias will be less severe w...

  14. Biased predecision processing.

    Science.gov (United States)

    Brownstein, Aaron L

    2003-07-01

    Decision makers conduct biased predecision processing when they restructure their mental representation of the decision environment to favor one alternative before making their choice. The question of whether biased predecision processing occurs has been controversial since L. Festinger (1957) maintained that it does not occur. The author reviews relevant research in sections on theories of cognitive dissonance, decision conflict, choice certainty, action control, action phases, dominance structuring, differentiation and consolidation, constructive processing, motivated reasoning, and groupthink. Some studies did not find evidence of biased predecision processing, but many did. In the Discussion section, the moderators are summarized and used to assess the theories.

  15. Magnetoelectric switching of perpendicular exchange bias in Pt/Co/α-Cr{sub 2}O{sub 3}/Pt stacked films

    Energy Technology Data Exchange (ETDEWEB)

    Toyoki, Kentaro; Shiratsuchi, Yu, E-mail: shiratsuchi@mat.eng.osaka-u.ac.jp; Kobane, Atsushi; Nakatani, Ryoichi [Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Mitsumata, Chiharu [National Institute for Materials Science, 1-2-1, Sengen, Tsukuba, Ibaragi 305-0047 (Japan); Kotani, Yoshinori; Nakamura, Tetsuya [Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, 1-1-1, Kouto, Sayo, Hyogo 679-5198 (Japan)

    2015-04-20

    We report the realization of magnetoelectric switching of the perpendicular exchange bias in Pt/Co/α-Cr{sub 2}O{sub 3}/Pt stacked films. The perpendicular exchange bias was switched isothermally by the simultaneous application of magnetic and electric fields. The threshold electric field required to switch the perpendicular exchange bias was found to be inversely proportional to the magnetic field, which confirmed the magnetoelectric mechanism of the process. The observed temperature dependence of the threshold electric field suggested that the energy barrier of the antiferromagnetic spin reversal was significantly lower than that assuming the coherent rotation. Pulse voltage measurements indicated that the antiferromagnetic domain propagation dominates the switching process. These results suggest an analogy of the electric-field-induced magnetization with a simple ferromagnet.

  16. Voltage-induced reduction of graphene oxide

    Science.gov (United States)

    Faucett, Austin C.

    Graphene Oxide (GO) is being widely researched as a precursor for the mass production of graphene, and as a versatile material in its own right for flexible electronics, chemical sensors, and energy harvesting applications. Reduction of GO, an electrically insulating material, into reduced graphene oxide (rGO) restores electrical conductivity via removal of oxygen-containing functional groups. Here, a reduction method using an applied electrical bias, known as voltage-induced reduction, is explored. Voltage-induced reduction can be performed under ambient conditions and avoids the use of hazardous chemicals or high temperatures common with standard methods, but little is known about the reduction mechanisms and the quality of rGO produced with this method. This work performs extensive structural and electrical characterization of voltage-reduced GO (V-rGO) and shows that it is competitive with standard methods. Beyond its potential use as a facile and eco-friendly processing approach, V-rGO reduction also offers record high-resolution patterning capabilities. In this work, the spatial resolution limits of voltage-induced reduction, performed using a conductive atomic force microscope probe, are explored. It is shown that arbitrary V-rGO conductive features can be patterned into insulating GO with nanoscale resolution. The localization of voltage-induced reduction to length scales < 10 nm allows studies of reduction reaction kinetics, using electrical current obtained in-situ, with statistical robustness. Methods for patterning V-rGO nanoribbons are then developed. After presenting sub-10nm patterning of V-rGO nanoribbons in GO single sheets and films, the performance of V-rGO nanoribbon field effect transistors (FETs) are demonstrated. Preliminary measurements show an increase in electrical current on/off ratios as compared to large-area rGO FETs, indicating transport gap modulation that is possibly due to quantum confinement effects.

  17. Challenges for High Voltage Testing of UHV Equipment

    Institute of Scientific and Technical Information of China (English)

    Ernst Gockenbach

    2011-01-01

    The increase of voltage level for AC and DC transmission systems requires some changes in the high voltage testing for Ultra High Voltage (UHV) equipment. After a short description of the coordination work in the standard- ization bodies the requirements for UHV equipment are mentioned. The main points concerning high voltage testing of UHV equipment are the impulse shape of standard lightning impulse voltage, the evaluation of the test voltage for impulses with oscillations or overshoot near the peak and the time parameter of switching impulses. The linearity check of the measuring devices, the proximity effect, the wet tests and the atmospheric correction factors are further points to be discussed concerning testing of UHV equipment.

  18. Planar LTCC transformers for high voltage flyback converters.

    Energy Technology Data Exchange (ETDEWEB)

    Schofield, Daryl (NASCENT Technology Inc. , Watertown, SD); Schare, Joshua M.; Glass, Sarah Jill; Roesler, Alexander William; Ewsuk, Kevin Gregory; Slama, George (NASCENT Technology Inc. , Watertown, SD); Abel, Dave (NASCENT Technology Inc. , Watertown, SD)

    2007-06-01

    This paper discusses the design and use of low-temperature (850 C to 950 C) co-fired ceramic (LTCC) planar magnetic flyback transformers for applications that require conversion of a low voltage to high voltage (> 100V) with significant volumetric constraints. Measured performance and modeling results for multiple designs showed that the LTCC flyback transformer design and construction imposes serious limitations on the achievable coupling and significantly impacts the transformer performance and output voltage. This paper discusses the impact of various design factors that can provide improved performance by increasing transformer coupling and output voltage. The experiments performed on prototype units demonstrated LTCC transformer designs capable of greater than 2 kV output. Finally, the work investigated the effect of the LTCC microstructure on transformer insulation. Although this paper focuses on generating voltages in the kV range, the experimental characterization and discussion presented in this work applies to designs requiring lower voltage.

  19. Admittance Spectroscopy in CZTSSe: Metastability Behavior and Voltage Dependent Defect Study

    Energy Technology Data Exchange (ETDEWEB)

    Koeper, Mark J.; Hages, Charles J.; Li, Jian V.; Levi, Dean; Agrawal, Rakesh

    2016-11-21

    Admittance spectroscopy has been performed on a CZTSSe device with a carrier injection pretreatment and under electronically relaxed conditions to demonstrate metastability behavior. We show that the measurements with the carrier injection pretreatment demonstrate two admittance signatures while the relaxed measurement demonstrates only one admittance signature with a different activation energy. Additionally, voltage dependent admittance spectroscopy was performed using the carrier injection pretreatment method at each of the applied voltage bias. The activation energies of the two admittance signatures were calculated and are shown to be independent of the voltage bias.

  20. Ultra-Low Voltage Class AB Switched Current Memory Cell

    DEFF Research Database (Denmark)

    Igor, Mucha

    1996-01-01

    This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

  1. Design and test of component circuits of an integrated quantum voltage noise source for Johnson noise thermometry

    Science.gov (United States)

    Yamada, Takahiro; Maezawa, Masaaki; Urano, Chiharu

    2015-11-01

    We present design and testing of a pseudo-random number generator (PRNG) and a variable pulse number multiplier (VPNM) which are digital circuit subsystems in an integrated quantum voltage noise source for Jonson noise thermometry. Well-defined, calculable pseudo-random patterns of single flux quantum pulses are synthesized with the PRNG and multiplied digitally with the VPNM. The circuit implementation on rapid single flux quantum technology required practical circuit scales and bias currents, 279 junctions and 33 mA for the PRNG, and 1677 junctions and 218 mA for the VPNM. We confirmed the circuit operation with sufficiently wide margins, 80-120%, with respect to the designed bias currents.

  2. Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices

    Institute of Scientific and Technical Information of China (English)

    DAI Zhen-Hong; NI Jun

    2006-01-01

    @@ We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonanttunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage (I - V) curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.

  3. Berkson’s bias, selection bias, and missing data

    OpenAIRE

    Westreich, Daniel

    2012-01-01

    While Berkson’s bias is widely recognized in the epidemiologic literature, it remains underappreciated as a model of both selection bias and bias due to missing data. Simple causal diagrams and 2×2 tables illustrate how Berkson’s bias connects to collider bias and selection bias more generally, and show the strong analogies between Berksonian selection bias and bias due to missing data. In some situations, considerations of whether data are missing at random or missing not at random is less i...

  4. Introduction to Unconscious Bias

    Science.gov (United States)

    Schmelz, Joan T.

    2010-05-01

    We all have biases, and we are (for the most part) unaware of them. In general, men and women BOTH unconsciously devalue the contributions of women. This can have a detrimental effect on grant proposals, job applications, and performance reviews. Sociology is way ahead of astronomy in these studies. When evaluating identical application packages, male and female University psychology professors preferred 2:1 to hire "Brian” over "Karen” as an assistant professor. When evaluating a more experienced record (at the point of promotion to tenure), reservations were expressed four times more often when the name was female. This unconscious bias has a repeated negative effect on Karen's career. This talk will introduce the concept of unconscious bias and also give recommendations on how to address it using an example for a faculty search committee. The process of eliminating unconscious bias begins with awareness, then moves to policy and practice, and ends with accountability.

  5. Increasingly minimal bias routing

    Energy Technology Data Exchange (ETDEWEB)

    Bataineh, Abdulla; Court, Thomas; Roweth, Duncan

    2017-02-21

    A system and algorithm configured to generate diversity at the traffic source so that packets are uniformly distributed over all of the available paths, but to increase the likelihood of taking a minimal path with each hop the packet takes. This is achieved by configuring routing biases so as to prefer non-minimal paths at the injection point, but increasingly prefer minimal paths as the packet proceeds, referred to herein as Increasing Minimal Bias (IMB).

  6. Biased causal inseparable game

    CERN Document Server

    Bhattacharya, Some Sankar

    2015-01-01

    Here we study the \\emph{causal inseparable} game introduced in [\\href{http://www.nature.com/ncomms/journal/v3/n10/full/ncomms2076.html}{Nat. Commun. {\\bf3}, 1092 (2012)}], but it's biased version. Two separated parties, Alice and Bob, generate biased bits (say input bit) in their respective local laboratories. Bob generates another biased bit (say decision bit) which determines their goal: whether Alice has to guess Bob's bit or vice-verse. Under the assumption that events are ordered with respect to some global causal relation, we show that the success probability of this biased causal game is upper bounded, giving rise to \\emph{biased causal inequality} (BCI). In the \\emph{process matrix} formalism, which is locally in agreement with quantum physics but assume no global causal order, we show that there exist \\emph{inseparable} process matrices that violate the BCI for arbitrary bias in the decision bit. In such scenario we also derive the maximal violation of the BCI under local operations involving tracele...

  7. Deployment of low-voltage regulator considering existing voltage control in medium-voltage distribution systems

    Directory of Open Access Journals (Sweden)

    Hiroshi Kikusato

    2016-01-01

    Full Text Available Many photovoltaic (PV systems have been installed in distribution systems. This installation complicates the maintenance of all voltages within the appropriate range in all low-voltage distribution systems (LVDSs because the trends in voltage fluctuation differ in each LVDS. The installation of a low-voltage regulator (LVR that can accordingly control the voltage in each LVDS has been studied as a solution to this problem. Voltage control in a medium-voltage distribution system must be considered to study the deployment of LVRs. In this study, we installed LVRs in the LVDSs in which the existing voltage-control scheme cannot prevent voltage deviation and performed a numerical simulation by using a distribution system model with PV to evaluate the deployment of the LVRs.

  8. Giant magnetoelectric effect in self-biased laminates under zero magnetic field

    Science.gov (United States)

    Li, Menghui; Wang, Zhiguang; Wang, Yaojin; Li, Jiefang; Viehland, D.

    2013-02-01

    A giant magnetoelectric (ME) effect in self-biased annealed Metglas/Pb(Zr,Ti)O3/Metglas laminates under zero magnetic bias is reported. The remanent magnetization was increased by annealing Metglas, which generated an internal bias field. This shifted the M-H hysteresis loops, yielding large values for the ME voltage coefficient of αME = 12 V/cm.Oe and 380 V/cm.Oe at 1 kHz and electromechanical resonance under zero magnetic bias, respectively. This self-biased laminate is shown to have a high sensitivity to ac magnetic fields.

  9. Design of A Low Power Low Voltage CMOS Opamp

    CERN Document Server

    Baruah, Ratul Kr

    2010-01-01

    In this paper a CMOS operational amplifier is presented which operates at 2V power supply and 1microA input bias current at 0.8 micron technology using non conventional mode of operation of MOS transistors and whose input is depended on bias current. The unique behaviour of the MOS transistors in subthreshold region not only allows a designer to work at low input bias current but also at low voltage. While operating the device at weak inversion results low power dissipation but dynamic range is degraded. Optimum balance between power dissipation and dynamic range results when the MOS transistors are operated at moderate inversion. Power is again minimised by the application of input dependant bias current using feedback loops in the input transistors of the differential pair with two current substractors. In comparison with the reported low power low voltage opamps at 0.8 micron technology, this opamp has very low standby power consumption with a high driving capability and operates at low voltage. The opamp ...

  10. Analyzing of Dynamic Voltage Restorer in Series Compensation Voltage

    Directory of Open Access Journals (Sweden)

    Naser Parhizgar

    2012-02-01

    Full Text Available The Dynamic Voltage Restorer (DVR is a series-connected compensator to generate a controllable voltage to against the short-term voltage disturbances. The technique of DVR is an effective and cost competitive approach to improve voltage quality at the load side. This study presents a single-phase and threephase DVR system with reduced switch-count topology to protect the sensitive load against abnormal voltage conditions. Most basic function, the DVR configuration consist of a two level Voltage Source Converter (VSC, a dc energy storage device, a coupling transformer Connected in shunt with the ac system This study presents the application of Dynamic Voltage Restorer (DVR on power distribution systems for mitigation of voltage sag at critical loads. DVR is one of the compensating types of custom power devices. The DVR, which is based on forced-commutated Voltage Source Converter (VSC has been proved suitable for the task of compensating voltage sags/swells. Simulation results are presented to illustrate and understand the performances of DVR in supporting load voltages under voltage sags/swells conditions.

  11. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  12. Increased voltage photovoltaic cell

    Science.gov (United States)

    Ross, B.; Bickler, D. B.; Gallagher, B. D. (Inventor)

    1985-01-01

    A photovoltaic cell, such as a solar cell, is provided which has a higher output voltage than prior cells. The improved cell includes a substrate of doped silicon, a first layer of silicon disposed on the substrate and having opposite doping, and a second layer of silicon carbide disposed on the first layer. The silicon carbide preferably has the same type of doping as the first layer.

  13. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  14. A 60 GOPS/W, -1.8V to 0.9V body bias ULP cluster in 28nm UTBB FD-SOI technology

    Science.gov (United States)

    Rossi, Davide; Pullini, Antonio; Loi, Igor; Gautschi, Michael; Gürkaynak, Frank K.; Bartolini, Andrea; Flatresse, Philippe; Benini, Luca

    2016-03-01

    Ultra-low power operation and extreme energy efficiency are strong requirements for a number of high-growth application areas, such as E-health, Internet of Things, and wearable Human-Computer Interfaces. A promising approach to achieve up to one order of magnitude of improvement in energy efficiency over current generation of integrated circuits is near-threshold computing. However, frequency degradation due to aggressive voltage scaling may not be acceptable across all performance-constrained applications. Thread-level parallelism over multiple cores can be used to overcome the performance degradation at low voltage. Moreover, enabling the processors to operate on-demand and over a wide supply voltage and body bias ranges allows to achieve the best possible energy efficiency while satisfying a large spectrum of computational demands. In this work we present the first ever implementation of a 4-core cluster fabricated using conventional-well 28 nm UTBB FD-SOI technology. The multi-core architecture we present in this work is able to operate on a wide range of supply voltages starting from 0.44 V to 1.2 V. In addition, the architecture allows a wide range of body bias to be applied from -1.8 V to 0.9 V. The peak energy efficiency 60 GOPS/W is achieved at 0.5 V supply voltage and 0.5 V forward body bias. Thanks to the extended body bias range of conventional-well FD-SOI technology, high energy efficiency can be guaranteed for a wide range of process and environmental conditions. We demonstrate the ability to compensate for up to 99.7% of chips for process variation with only ±0.2 V of body biasing, and compensate temperature variation in the range -40 °C to 120 °C exploiting -1.1 V to 0.8 V body biasing. When compared to leading-edge near-threshold RISC processors optimized for extremely low power applications, the multi-core architecture we propose has 144× more performance at comparable energy efficiency levels. Even when compared to other low-power processors

  15. Bias-stress-induced instability of polymer thin-film transistor based on poly(3-hexylthiophene)

    OpenAIRE

    Liu, YR; Liao, R.; Lai, PT; Yao, RH

    2012-01-01

    A polymer thin-film transistor (PTFT) based on poly(3-hexylthiophene) (P3HT) is fabricated by a spin-coating process and characterized. Its bias-stress-induced instability during operation is investigated as a function of time and temperature. For negative gate-bias stress, the carrier mobility remains unchanged, the off-state current decreases, and the threshold voltage shifts toward the negative direction. On the other hand, for negative drain-bias stress, the carrier mobility decreases sli...

  16. Practical investigation of the gate bias effect on the reverse recovery behavior of the body diode in power MOSFETs

    DEFF Research Database (Denmark)

    Lindberg-Poulsen, Kristian; Petersen, Lars Press; Ouyang, Ziwei

    2014-01-01

    This work considers an alternative method of reducing the body diode reverse recovery by taking advantage of the MOSFET body effect, and applying a bias voltage to the gate before reverse recovery. A test method is presented, allowing the accurate measurement of voltage and current waveforms during...... reverse recovery at high di=dt. Different bias voltages and dead times are combined, giving a loss map which makes it possible to evaluate the practical efficacy of gate bias on reducing the MOSFET body diode reverse recovery, while comparing it to the well known methods of dead time optimization...

  17. Synergistic effect of bias and target currents for magnetron sputtered MoS{sub 2}-Ti composite films

    Energy Technology Data Exchange (ETDEWEB)

    Buelbuel, Ferhat; Efeoglu, Ihsan [Ataturk Univ., Erzurum (Turkey). Dept. of Mechanical Engineering

    2016-07-01

    In terms of modification of the properties of MoS{sub 2}-Ti composite films, especially tribological properties, significant advances have recently been recorded. However, the commercially production of MoS{sub 2}-Ti composite films is still limited, because the production of desirable MoS{sub 2}-Ti composite coating is only possible by using closed field unbalanced magnetron systems and by the selection of convenient deposition parameters. This requirement has focused the researchers' attention on optimization of deposition parameters. This study is concentrating on the effect of the bias voltage and the target currents for MoS{sub 2}-Ti composite films deposited by pulsed magnetron sputtering (PMS). It is found that the bias and the target currents clearly affect the mechanical, structural and tribological properties of MoS{sub 2}-Ti films.

  18. Mitigation of Voltage Sags in CIGRE Low Voltage Distribution Network

    DEFF Research Database (Denmark)

    Mustafa, Ghullam; Bak-Jensen, Birgitte; Mahat, Pukar;

    2013-01-01

    problems in the distribution system. The voltage problems dealt with in this paper are to show how to mitigate voltage sags in the CIGRE Low Voltage (LV) test network and networks like this. The voltage sags, for the tested cases in the CIGRE LV test network are mainly due to three phase faults....... The compensation of voltage sags in the different parts of CIGRE distribution network is done by using the four STATCOM compensators already existing in the test grid. The simulations are carried out in DIgSILENT power factory software version 15.0....

  19. Voltage Controlled Dynamic Demand Response

    DEFF Research Database (Denmark)

    Bhattarai, Bishnu Prasad; Bak-Jensen, Birgitte; Mahat, Pukar

    2013-01-01

    . An adaptive dynamic model has been developed to determine composite voltage dependency of an aggregated load on feeder level. Following the demand dispatch or control signal, optimum voltage setting at the LV substation is determined based on the voltage dependency of the load. Furthermore, a new technique...

  20. Charge-pump voltage converter

    Science.gov (United States)

    Brainard, John P.; Christenson, Todd R.

    2009-11-03

    A charge-pump voltage converter for converting a low voltage provided by a low-voltage source to a higher voltage. Charge is inductively generated on a transfer rotor electrode during its transit past an inductor stator electrode and subsequently transferred by the rotating rotor to a collector stator electrode for storage or use. Repetition of the charge transfer process leads to a build-up of voltage on a charge-receiving device. Connection of multiple charge-pump voltage converters in series can generate higher voltages, and connection of multiple charge-pump voltage converters in parallel can generate higher currents. Microelectromechanical (MEMS) embodiments of this invention provide a small and compact high-voltage (several hundred V) voltage source starting with a few-V initial voltage source. The microscale size of many embodiments of this invention make it ideally suited for MEMS- and other micro-applications where integration of the voltage or charge source in a small package is highly desirable.

  1. Switchable voltage control of the magnetic coercive field via magnetoelectric effect

    Science.gov (United States)

    Wang, Jing; Ma, Jing; Li, Zheng; Shen, Yang; Lin, Yuanhua; Nan, C. W.

    2011-08-01

    Switchable voltage modulation of the magnetic properties is reported in different multiferroic bilayers with magnetic films grown on pre-poled ferroelectric substrates, based on the magneto-optical Kerr effect observations. The dynamic voltage control of the magnetic coercive field (Hc) is dependent not only on the materials properties of each ferroic layer, but also on the bias voltage history. The Hc versus electric field behaviors essentially track the dependence of the piezostrains of the substrates on the bias voltage. The observations demonstrate that Hc in such multiferroic bilayers can be controlled by voltage via strain-mediated magnetoelectric coupling and that the Hc change is not an artifact due to a heating effect.

  2. Voltage scheduling for low power/energy

    Science.gov (United States)

    Manzak, Ali

    2001-07-01

    Power considerations have become an increasingly dominant factor in the design of both portable and desk-top systems. An effective way to reduce power consumption is to lower the supply voltage since voltage is quadratically related to power. This dissertation considers the problem of lowering the supply voltage at (i) the system level and at (ii) the behavioral level. At the system level, the voltage of the variable voltage processor is dynamically changed with the work load. Processors with limited sized buffers as well as those with very large buffers are considered. Given the task arrival times, deadline times, execution times, periods and switching activities, task scheduling algorithms that minimize energy or peak power are developed for the processors equipped with very large buffers. A relation between the operating voltages of the tasks for minimum energy/power is determined using the Lagrange multiplier method, and an iterative algorithm that utilizes this relation is developed. Experimental results show that the voltage assignment obtained by the proposed algorithm is very close (0.1% error) to that of the optimal energy assignment and the optimal peak power (1% error) assignment. Next, on-line and off-fine minimum energy task scheduling algorithms are developed for processors with limited sized buffers. These algorithms have polynomial time complexity and present optimal (off-line) and close-to-optimal (on-line) solutions. A procedure to calculate the minimum buffer size given information about the size of the task (maximum, minimum), execution time (best case, worst case) and deadlines is also presented. At the behavioral level, resources operating at multiple voltages are used to minimize power while maintaining the throughput. Such a scheme has the advantage of allowing modules on the critical paths to be assigned to the highest voltage levels (thus meeting the required timing constraints) while allowing modules on non-critical paths to be assigned

  3. VOLTAGE MONITORING INSTRUMENT WITH FAST-TRANSIENTS CAPTURE CAPABILITY

    Directory of Open Access Journals (Sweden)

    M. Gracida-Aguirre

    2003-09-01

    Full Text Available A monitoring instrument aimed at recording the voltage levels at residential installations is described. Its main feature is the capability ot recording short transients, lasting less than one cycle, while requiring a rather modest amount of memory for long monitoring periods. The instrument uses synchronous sampling of the voltage waveform, and its response to outages has been optimized.

  4. Wide Operating Voltage Range Fuel Cell Battery Charger

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos; Mira Albert, Maria del Carmen; Sen, Gokhan;

    2014-01-01

    DC-DC converters for fuel cell applications require wide voltage range operation due to the unique fuel cell characteristic curve. Primary parallel isolated boost converter (PPIBC) is a boost derived topology for low voltage high current applications reaching an efficiency figure up to 98.2 %. Th...

  5. Low voltage fault ride through control in MMC-HVDC

    DEFF Research Database (Denmark)

    Chaudhary, S.; Teodorescu, R.; Rizadis, D.

    2017-01-01

    Modular multilevel converters (MMCs) are the latest converter topology for the high voltage high power applications like the high voltage dc (HVDC) transmission. This paper presents the response of an MMC-HVDC converter during grid faults. Recent grid code requirements specify reactive current...

  6. Wide Operating Voltage Range Fuel Cell Battery Charger

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos; Mira Albert, Maria del Carmen; Sen, Gokhan

    2014-01-01

    DC-DC converters for fuel cell applications require wide voltage range operation due to the unique fuel cell characteristic curve. Primary parallel isolated boost converter (PPIBC) is a boost derived topology for low voltage high current applications reaching an efficiency figure up to 98.2 %. Th...

  7. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  8. The first results of electrode biasing experiments in the IR-T1 tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Ghoranneviss, M; Salar Elahi, A; Mohammadi, S; Arvin, R, E-mail: salari_phy@yahoo.co [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, PO Box 14665-678, Tehran (Iran, Islamic Republic of)

    2010-09-15

    We report here the first results of our movable electrode biasing experiments performed in the IR-T1 tokamak. For this study, a movable electrode biasing system was designed, constructed and installed on the IR-T1 tokamak. A positive voltage was applied to an electrode inserted in the tokamak limiter. The plasma current, poloidal and radial components of the magnetic fields, loop voltage and diamagnetic flux in the absence and presence of the biased electrode were measured. Results of the improvement done to plasma equilibrium behaviour are compared and discussed in this paper.

  9. Time resolved measurements of the biased disk effect at an Electron Cyclotron Resonance Ion Source

    Directory of Open Access Journals (Sweden)

    K. E. Stiebing

    1999-12-01

    Full Text Available First results are reported from time resolved measurements of ion currents extracted from the Frankfurt 14 GHz Electron Cyclotron Resonance Ion Source with pulsed biased-disk voltage. It was found that the ion currents react promptly to changes of the bias. From the experimental results it is concluded that the biased disk effect is mainly due to improvements of the extraction conditions for the source and/or an enhanced transport of ions into the extraction area. By pulsing the disk voltage, short current pulses of highly charged ions can be generated with amplitudes significantly higher than the currents obtained in continuous mode.

  10. A Voltage Controlled Oscillator using Ring Structure in CMOS Technology

    Directory of Open Access Journals (Sweden)

    Mrs. Devendra Rani

    2012-06-01

    Full Text Available Voltage-Controlled Ring Oscillators are crucial components in many wireless communication systems. The goal of this project is to design a high speed and lower power consumption, a voltage controlled oscillator (VCO, based on ring oscillators in 250nm CMOS technology, which provides a frequency of 2.4GHz. This CMOS based VCO is used for high speed wireless communication applications. A design of VCO includes delay cell, bias circuitry, and tuning circuitry using Tanner 13.0v software.

  11. Development of high-voltage pulse generator with variable amplitude and duration

    Science.gov (United States)

    Upadhyay, J.; Sharma, M. L.; Ahuja, Aakash B.; Navathe, C. P.

    2014-06-01

    A high voltage pulse generator with variable amplitude (100-3000 V) and duration (100-2000 μs) has been designed and developed. The variable duration pulse has been generated by adopting a simple and novel technique of varying the turn off delay time of a high voltage Metal Oxide Semiconductor Field Effect Transistor (MOSFET) based switch by varying external gate resistance. The pulse amplitude is made variable by adjusting biasing supply of the high voltage switch. The high voltage switch has been developed using a MOSFET based stack of 3 kV rating with switching time of 7 ns.

  12. High Voltage Operation of heavily irradiated silicon microstrip detectors

    CERN Document Server

    Gu, W H; Angarano, M M; Bader, A; Biggeri, U; Boemi, D; Braibant, S; Breuker, H; Bruzzi, Mara; Caner, A; Catacchini, E; Civinini, C; Creanza, D; D'Alessandro, R; Demaria, N; Eklund, C; Peisert, Anna; Feld, L; Fiore, L; Focardi, E; Fürtjes, A; Glessing, B; Hall, G; Hammerstrom, R; Dollan, Ralph; Huhtinen, M; Karimäki, V; König, S; Lenzi, M; Lübelsmeyer, K; Maggi, G; Mannelli, M; Marchioro, A; Mariotti, C; Mättig, P; McEvoy, B; Meschini, M; My, S; Pandoulas, D; Parrini, G; Pieri, M; Dollan, Ralph; Potenza, R; Raso, G; Raymond, M; Schmitt, B; Selvaggi, G; Siedling, R; Silvestris, L; Skog, K; Stefanini, G; Tempesta, P; Tricomi, A; Watts, S; Wittmer, B; De Palma, M

    1999-01-01

    We discuss the results obtained from the R&D studies, done within the CMS experiment at LHC related to the behaviour of silicon microstrip prototype detectors when they are operated at high bias voltages before and after heavy irradiation, simulating up to 10 years of LHC running conditions. We have found detectors from several manufacturesrs that are able to work at V_bias > 500 Volts before and after the irradiation procedure, maintaining an acceptable performance with S/N > 14, efficiency close to 100% and few ghost hits.

  13. Conduction channels at finite bias in single-atom gold contacts

    DEFF Research Database (Denmark)

    Brandbyge, Mads; Kobayashi, Nobuhiko; Tsukada, Masaru

    1999-01-01

    We consider the effect of a finite voltage bias on the conductance of single-atom gold contacts. We employ a nonorthogonal spn-tight-binding Hamiltonian combined with a local charge neutrality assumption. The conductance and charge distributions for finite bias are calculated using the nonequilib......We consider the effect of a finite voltage bias on the conductance of single-atom gold contacts. We employ a nonorthogonal spn-tight-binding Hamiltonian combined with a local charge neutrality assumption. The conductance and charge distributions for finite bias are calculated using...... the nonequilibrium-Green-function formalism. We calculate the voltage drop through the contacts and find the main drop located near the negative electrode. We argue that this is due to the filled d-state resonances. The conduction is analyzed in terms of transmission eigenchannels and density of states...

  14. Measuring Agricultural Bias

    DEFF Research Database (Denmark)

    Jensen, Henning Tarp; Robinson, Sherman; Tarp, Finn

    . For the 15 sample countries, the results indicate that the agricultural price incentive bias, which was generally perceived to exist during the 1980s, was largely eliminated during the 1990s. The results also demonstrate that general equilibrium effects and country-specific characteristics - including trade...... shares and intersectoral linkages - are crucial for determining the sign and magnitude of trade policy bias. The GE-ERP measure is therefore uniquely suited to capture the full impact of trade policies on agricultural price incentives. A Monte Carlo procedure confirms that the results are robust...

  15. Measuring agricultural policy bias

    DEFF Research Database (Denmark)

    Jensen, Henning Tarp; Robinson, Sherman; Tarp, Finn

    2010-01-01

    Measurement is a key issue in the literature on price incentive bias induced by trade policy. We introduce a general equilibrium measure of the relative effective rate of protection, which generalizes earlier protection measures. For our fifteen sample countries, results indicate that the agricul......Measurement is a key issue in the literature on price incentive bias induced by trade policy. We introduce a general equilibrium measure of the relative effective rate of protection, which generalizes earlier protection measures. For our fifteen sample countries, results indicate...... protection measure is therefore uniquely suited to capture the full impact of trade policies on relative agricultural price incentives....

  16. No-Voltage Meter

    Science.gov (United States)

    1976-02-01

    VW- IKft, 1/4 H4 -Wv- IK!1, I/4W INTERNAL VOLTAGE NOTE ALL TRANSISTORS ARE 2N43A OR EQUIVALENT GERMANIUM ALLOY PNP AA ALKALINE BATTERY...D-,, regardless of polarity. This signal is then full-wave rectified by the diode-connected Germanium transistor bridge, T,, T-,, T3, and T4... Transistor T5 acts as a second current limiter. Resistor R2 was selected to give 90 f# of full-scale meter deflection with an input signal of 115 volts

  17. Benchmarking of Voltage Sag Generators

    DEFF Research Database (Denmark)

    Yang, Yongheng; Blaabjerg, Frede; Zou, Zhixiang

    2012-01-01

    The increased penetration of renewable energy systems, like photovoltaic and wind power systems, rises the concern about the power quality and stability of the utility grid. Some regulations for Low Voltage Ride-Through (LVRT) for medium voltage or high voltage applications, are coming into force...... to guide these grid-connected distributed power generation systems. In order to verify the response of such systems for voltage disturbance, mainly for evaluation of voltage sags/dips, a Voltage Sag Generator (VSG) is needed. This paper evaluates such sag test devices according to IEC 61000 in order...... to provide cheaper solutions to test against voltage sags. Simulation and experimental results demonstrate that the shunt impedance based VSG solution is the easiest and cheapest one for laboratory test applications. The back-to-back fully controlled converter based VSG is the most flexible solution...

  18. Influence of mechanical load bias on converse magnetoelectric laminate composites

    Science.gov (United States)

    Wu, Tao; Emmons, Michael; Chung, Tien-Kan; Sorge, Jian; Carman, Gregory P.

    2010-05-01

    A piezofiber/Metglas (PFM) magnetoelectric (ME) laminate has been integrated into a graphite epoxy composite (GEC) to study the converse ME effect (CME). Experimental data on a PFM/GEC subjected to both a dc magnetic field bias and a dc mechanical load bias while exciting it with an ac electric driving voltage are presented. Results of these tests indicate that both the mechanical load and the dc magnetic field strongly influence the CME response. Furthermore, an optimum mechanical load exists to maximize the CME coefficient, which should also be present in standalone ME laminates. These results reveal that the CME coefficient can be further increased with a proper mechanical load bias. Therefore, the selection of an appropriate mechanical preload as well as dc magnetic bias will maximize the CME response and sensitivity in ME laminates as well as integrated structural systems.

  19. Current-voltage characteristics of carbon nanotubes with substitutional nitrogen

    DEFF Research Database (Denmark)

    Kaun, C.C.; Larade, B.; Mehrez, H.;

    2002-01-01

    We report ab initio analysis of current-voltage (I-V) characteristics of carbon nanotubes with nitrogen substitution doping. For zigzag semiconducting tubes, doping with a single N impurity increases current flow and, for small radii tubes, narrows the current gap. Doping a N impurity per nanotube...... unit cell generates a metallic transport behavior. Nonlinear I-V characteristics set in at high bias and a negative differential resistance region is observed for the doped tubes. These behaviors can be well understood from the alignment/mis-alignment of the current carrying bands in the nanotube leads...... due to the applied bias voltage. For a armchair metallic nanotube, a reduction of current is observed with substitutional doping due to elastic backscattering by the impurity....

  20. Heat-pump performance: voltage dip/sag, under-voltage and over-voltage

    Directory of Open Access Journals (Sweden)

    William J.B. Heffernan

    2014-12-01

    Full Text Available Reverse cycle air-source heat-pumps are an increasingly significant load in New Zealand and in many other countries. This has raised concern over the impact wide-spread use of heat-pumps may have on the grid. The characteristics of the loads connected to the power system are changing because of heat-pumps. Their performance during under-voltage events such as voltage dips has the potential to compound the event and possibly cause voltage collapse. In this study, results from testing six heat-pumps are presented to assess their performance at various voltages and hence their impact on voltage stability.

  1. Simulating currency substitution bias

    NARCIS (Netherlands)

    M. Boon (Martin); C.J.M. Kool (Clemens); C.G. de Vries (Casper)

    1989-01-01

    textabstractThe sign and size of estimates of the elasticity of currency substitution critically depend on the definition of the oppurtunity costs of holding money. We investigate possible biases by means of Monte Carlo experiments, as sufficient real data are not available.

  2. Sex Bias in Children.

    Science.gov (United States)

    Zalk, Sue Rosenberg; And Others

    This study investigated children's sex biased attitudes as a function of the sex, age, and race of the child as well as a geographical-SES factor. Two attitudes were measured on a 55-item questionnaire: Sex Pride (attributing positive characteristics to a child of the same sex) and Sex Prejudice (attributing negative characteristics to a child of…

  3. Toroidal-Core Microinductors Biased by Permanent Magnets

    Science.gov (United States)

    Lieneweg, Udo; Blaes, Brent

    2003-01-01

    The designs of microscopic toroidal-core inductors in integrated circuits of DC-to-DC voltage converters would be modified, according to a proposal, by filling the gaps in the cores with permanent magnets that would apply bias fluxes (see figure). The magnitudes and polarities of the bias fluxes would be tailored to counteract the DC fluxes generated by the DC components of the currents in the inductor windings, such that it would be possible to either reduce the sizes of the cores or increase the AC components of the currents in the cores without incurring adverse effects. Reducing the sizes of the cores could save significant amounts of space on integrated circuits because relative to other integrated-circuit components, microinductors occupy large areas - of the order of a square millimeter each. An important consideration in the design of such an inductor is preventing magnetic saturation of the core at current levels up to the maximum anticipated operating current. The requirement to prevent saturation, as well as other requirements and constraints upon the design of the core are expressed by several equations based on the traditional magnetic-circuit approximation. The equations involve the core and gap dimensions and the magnetic-property parameters of the core and magnet materials. The equations show that, other things remaining equal, as the maximum current is increased, one must increase the size of the core to prevent the flux density from rising to the saturation level. By using a permanent bias flux to oppose the flux generated by the DC component of the current, one would reduce the net DC component of flux in the core, making it possible to reduce the core size needed to prevent the total flux density (sum of DC and AC components) from rising to the saturation level. Alternatively, one could take advantage of the reduction of the net DC component of flux by increasing the allowable AC component of flux and the corresponding AC component of current

  4. ANN BASED ONLINE ESTIMATION OF VOLTAGE COLLAPSE PROXIMITY INDICATOR

    Directory of Open Access Journals (Sweden)

    G. Balamurugan

    2010-07-01

    Full Text Available Voltage stability has recently become a challenging issue in many power systems. There are different methods used to study the voltage collapse phenomenon but most of them take significant computation time and are not suitable for on-line applications. Fast voltage stability assessment tools are required in order to ensure the secureoperation of the present day power systems, as voltage collapse can occur quite abruptly in systems. Therefore a new ANN based on-line approach that requires minimum input for estimation of voltage collapse proximity indicator for each critical bus under normal and contingent conditions is developed in this paper. Test results onIEEE-14 bus system are presented to show its computational accuracy.

  5. Dual voltage power supply with 48 volt

    Energy Technology Data Exchange (ETDEWEB)

    Froeschl, Joachim; Proebstle, Hartmut; Sirch, Ottmar [BMW Group, Muenchen (Germany)

    2012-11-01

    Automotive electrics/electronics have just reached a period of tremendous change. High voltage systems for Hybrid, Plug-In Hybrid or Battery Electric Vehicles with high power electric motors, high energy accumulators and electric climate compressors will be introduced in order to achieve the challenging targets for CO{sub 2} emissions and energy efficiency and to anticipate the mobility of the future. Additionally, innovations and the continuous increase of functionality for comfort, safety, driver assistance and infotainment systems require more and more electrical power of the vehicle power supply at all. On the one hand side electrified vehicles will certainly achieve a significant market share, on the other hand side they will increase the pressure to conventional vehicles with combustion engines for fuel consumption and CO{sub 2} emissions. These vehicles will be enabled to keep their competitiveness by new functions and the optimization of their electric systems. A dual voltage power supply with 48 Volt and 12 Volt will be one of the key technologies to realize these requirements. The power capability of the existing 12 Volt power supply has reached its limits. Further potentials can only be admitted by the introduction of 48 Volt. For this reason the car manufacturers Audi, BMW, Daimler, Porsche and Volkswagen started very early on this item and developed a common specification of the new voltage range. Now, it is necessary to identify the probable systems at this voltage range and to start the developments. (orig.)

  6. Voltage Swells Improvement in Low Voltage Network Using Dynamic Voltage Restorer

    Directory of Open Access Journals (Sweden)

    R. Omar

    2011-01-01

    Full Text Available Problem statement: Voltage disturbances are the most common power quality problem due to the increased use of a large numbers of sophisticated electronic equipment in industrial distribution system. The voltage disturbances such as voltage sags, swells, harmonics, unbalance and flickers. High quality in the power supply is needed, since failures due to such disturbances usually have a high impact on production cost. There are many different solutions to compensate voltage disturbances but the use of a DVR is considered to be the most cost effective method. The objective of this study is to propose a new topology of a DVR in order to mitigate voltage swells using a powerful power custom device namely the Dynamic Voltage Restorer (DVR. Approach: New configuration of a DVR with an improvement of a controller based on direct-quadrature-zero method has been introduced to compensate voltage swells in the network. Results: The effectiveness of the DVR with its controller were verify using Matlab/Simulinks SimPower Toolbox and then implemented using 5KVA DVR experimental setup. Simulations and experimental results demonstrate the effective dynamic performance of the proposed configuration. Conclusion: The implimentation of the proposed DVR validate the capabilities in mitigating of voltage swells effectiveness.During voltage swells, the DVR injects an appropriate voltage to maintain the load voltage at its nominal value.

  7. Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel metal-oxide-semiconductor field-effect transistors

    Institute of Scientific and Technical Information of China (English)

    Cao Yan-Rong; Hao Yue; Ma Xiao-Hua; Hu Shi-Gang

    2009-01-01

    The effect of substrate bias on the degradation during applying a negative bias temperature (NBT) stress is studied in this paper. With a smaller gate voltage stress applied, the degradation of negative bias temperature instability (NBTI) is enhanced, and there comes forth an inflexion point. The degradation pace turns larger when the substrate bias is higher than the inflexion point. The substrate hot holes can be injected into oxide and generate additional oxide traps, inducing an inflexion phenomenon. When a constant substrate bias stress is applied, as the gate voltage stress increases, an inflexion comes into being also. The higher gate voltage causes the electrons to tunnel into the substrate from the poly, thereby generating the electron-hole pairs by impact ionization. The holes generated by impact ionization and the holes from the substrate all can be accelerated to high energies by the substrate bias. More additional oxide traps can be produced, and correspondingly, the degradation is strengthened by the substrate bias. The results of the alternate stress experiment show that the interface traps generated by the hot holes cannot be annealed, which is different from those generated by common holes.

  8. Isomerically Pure Tetramethylrhodamine Voltage Reporters.

    Science.gov (United States)

    Deal, Parker E; Kulkarni, Rishikesh U; Al-Abdullatif, Sarah H; Miller, Evan W

    2016-07-27

    We present the design, synthesis, and application of a new family of fluorescent voltage indicators based on isomerically pure tetramethylrhodamines. These new Rhodamine Voltage Reporters, or RhoVRs, use photoinduced electron transfer (PeT) as a trigger for voltage sensing, display excitation and emission profiles in the green to orange region of the visible spectrum, demonstrate high sensitivity to membrane potential changes (up to 47% ΔF/F per 100 mV), and employ a tertiary amide derived from sarcosine, which aids in membrane localization and simultaneously simplifies the synthetic route to the voltage sensors. The most sensitive of the RhoVR dyes, RhoVR 1, features a methoxy-substituted diethylaniline donor and phenylenevinylene molecular wire at the 5'-position of the rhodamine aryl ring, exhibits the highest voltage sensitivity to date for red-shifted PeT-based voltage sensors, and is compatible with simultaneous imaging alongside green fluorescent protein-based indicators. The discoveries that sarcosine-based tertiary amides in the context of molecular-wire voltage indicators prevent dye internalization and 5'-substituted voltage indicators exhibit improved voltage sensitivity should be broadly applicable to other types of PeT-based voltage-sensitive fluorophores.

  9. Voltage controlled terahertz transmission through GaN quantum wells

    OpenAIRE

    Laurent, T.; Sharma, R.; Torres, J.; Nouvel, P; Blin, S.; Varani, L.; Cordier, Y.; Chmielowska, M.; Chenot, S.; Faurie, JP; Beaumont, B.; P. Shiktorov; Starikov, E.; Gruzinskis, V.; Korotyevyev, V.

    2011-01-01

    We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical phenomena involved, these results are compared with a phenomenological theory of light transmission under electric bias relating the transmission enhancement ...

  10. Motion, identity and the bias toward agency

    Directory of Open Access Journals (Sweden)

    Chris eFields

    2014-08-01

    Full Text Available The well-documented human bias toward agency as a cause and therefore an explanation of observed events is typically attributed to evolutionary selection for a social brain. Based on a review of developmental and adult behavioral and neurocognitive data, it is argued that the bias toward agency is a result of the default human solution, developed during infancy, to the computational requirements of object re-identification over gaps in observation of more than a few seconds. If this model is correct, overriding the bias toward agency to construct mechanistic explanations of observed events requires structure-mapping inferences, implemented by the pre-motor action planning system, that replace agents with mechanisms as causes of unobserved changes in contextual or featural properties of objects. Experiments that would test this model are discussed.

  11. Neural correlates of attentional bias in addiction.

    Science.gov (United States)

    Hester, Robert; Luijten, Maartje

    2014-06-01

    A small but growing neuroimaging literature has begun to examine the neural mechanisms underlying the difficulty that substance-use dependent (SUD) groups have with ignoring salient, drug-related stimuli. Drug-related attentional bias appears to implicate the countermanding forces of cognitive control and reward salience. Basic cognitive neuroscience research suggests that ignoring emotionally evocative stimuli in our environment requires both up-regulation of control networks and down-regulation of processing in emotion and reward regions. Research to date suggests that attentional biases for drug-related stimuli emerge from a failure to sufficiently increase control of attention over salient, but task-irrelevant stimuli. While SUD samples have typically shown increased activity in the cognitive control regions (ie, lateral prefrontal and dorsal anterior cingulate), during attentional bias such increases appear to have been insufficient for the concomitant increases in processing by the emotion/reward regions (ie, amygdala, insula, and striatum). Given the potential contribution of attentional biases to perpetuating drug use and the development of interventions (both pharmaceutical and cognitive-behavioral) to treat biases, understanding the neural basis of successfully reducing bias remains an important, but as yet unanswered, question for our field.

  12. A Perpendicular Biased 2nd Harmonic Cavity for the Fermilab Booster

    Energy Technology Data Exchange (ETDEWEB)

    Tan, C. Y.; Dey, J. [Fermilab; Madrak, R. L. [Fermilab; Pellico, W. [Fermilab; Romanov, G. [Fermilab; Sun, D. [Fermilab; Terechkine, I. [Fermilab

    2015-07-13

    A perpendicular biased 2nd harmonic cavity is currently being designed for the Fermilab Booster. Its purpose cavity is to flatten the bucket at injection and thus change the longitudinal beam distribution so that space charge effects are decreased. It can also with transition crossing. The reason for the choice of perpendicular biasing over parallel biasing is that the Q of the cavity is much higher and thus allows the accelerating voltage to be a factor of two higher than a similar parallel biased cavity. This cavity will also provide a higher accelerating voltage per meter than the present folded transmission line cavity. However, this type of cavity presents technical challenges that need to be addressed. The two major issues are cooling of the garnet material from the effects of the RF and the cavity itself from eddy current heating because of the 15 Hz bias field ramp. This paper will address the technical challenge of preventing the garnet from overheating.

  13. Radiation tolerant back biased CMOS VLSI

    Science.gov (United States)

    Maki, Gary K. (Inventor); Gambles, Jody W. (Inventor); Hass, Kenneth J. (Inventor)

    2003-01-01

    A CMOS circuit formed in a semiconductor substrate having improved immunity to total ionizing dose radiation, improved immunity to radiation induced latch up, and improved immunity to a single event upset. The architecture of the present invention can be utilized with the n-well, p-well, or dual-well processes. For example, a preferred embodiment of the present invention is described relative to a p-well process wherein the p-well is formed in an n-type substrate. A network of NMOS transistors is formed in the p-well, and a network of PMOS transistors is formed in the n-type substrate. A contact is electrically coupled to the p-well region and is coupled to first means for independently controlling the voltage in the p-well region. Another contact is electrically coupled to the n-type substrate and is coupled to second means for independently controlling the voltage in the n-type substrate. By controlling the p-well voltage, the effective threshold voltages of the n-channel transistors both drawn and parasitic can be dynamically tuned. Likewise, by controlling the n-type substrate, the effective threshold voltages of the p-channel transistors both drawn and parasitic can also be dynamically tuned. Preferably, by optimizing the threshold voltages of the n-channel and p-channel transistors, the total ionizing dose radiation effect will be neutralized and lower supply voltages can be utilized for the circuit which would result in the circuit requiring less power.

  14. Generation of Radial Electric Field with Electrode Biasing

    Institute of Scientific and Technical Information of China (English)

    WANG Cheng; PAN Ge-Sheng; WEN Yi-Zhi; YU Chang-Xuan; WAN Shu-De; LIU Wan-Dong; WANG Zhi-Jiang; SUN Xuan

    2001-01-01

    Time and space resolved measurements of the radial electric field (Er) have been conducted during the electrode biasing experiments on the KT-5C tokamak. The suppression of the turbulent transport with the change of Er induced by the biased electrode is observed. It is found that the poloidal flow contributes to the main part of the Er, and the change of the poloidal flow has a lead of about 20μs to the formation of Er. These observations suggest that a radialcurrent, responding to an induced voltage on the electrode, drives a poloidal flow which in turn drives the radial electric field.

  15. Josephson effects in an alternating current biased transition edge sensor

    CERN Document Server

    Gottardi, Luciano; Akamatsu, Hiroki; van der Kuur, Jan; Bruijn, Marcel P; Hartog, Roland H den; Hijmering, Richard; Khosropanah, Pourya; Lambert, Colin; van der Linden, Anton J; Ridder, Marcel L; Suzuki, Toyo; Gao, Jan R

    2016-01-01

    We report the experimental evidence of the ac Josephson effect in a transition edge sensor (TES) operating in a frequency domain multiplexer and biased by ac voltage at MHz frequencies. The effect is observed by measuring the non-linear impedance of the sensor. The TES is treated as a weakly linked superconducting system and within the resistively shunted junction model framework. We provide a full theoretical explanation of the results by finding the analytic solution of the non-inertial Langevian equation of the system and calculating the non-linear response of the detector to a large ac bias current in the presence of noise.

  16. Loading Analysis of Modular Multi-level Converter for Offshore High-voltage DC Application under Various Grid Faults

    DEFF Research Database (Denmark)

    Liu, Hui; Ma, Ke; Loh, Poh Chiang;

    2016-01-01

    The modular multi-level converter has become an interesting candidate in high-voltage DC systems due to its higher voltage levels and modular construction. Low-voltage ride-through is an important grid requirement for modular multi-level converter–high-voltage DC since not only causes control cha...... be of importance for the design of the cooling system....

  17. Low voltage drop plasma switch for inverter and modulator applications

    Science.gov (United States)

    Goebel, D. M.; Poeschel, R. L.; Schumacher, R. W.

    1993-08-01

    A low forward voltage drop plasma switch has been developed for high-efficiency inverter and modulator applications. The switch, called the HOLLOTRON, is based on a grid-controlled, thermionic hollow-cathode discharge. A low forward voltage drop (10-20 V) is achieved by operating the hollow-cathode discharge in a static gas pressure of xenon. The dense plasma generated in the Ba-oxide dispenser hollow cathode is spread over a relatively large control grid area by a diverging magnetic field superimposed on the discharge. Interruption of the discharge current at high current densities (≳4 A/cm2) over the grid area is achieved by biasing the control grid sufficiently negative with respect to the plasma. The HOLLOTRON switch has demonstrated voltage stand-off of up to 20 kV, switching times of ≤0.3 μs, and pulse repetition frequencies of 20 kHz at 50% duty.

  18. Implementationof Single Phasing, Over Voltage, Under Voltage, Protection of Three Phase Appliances without Using Microcontroller

    Directory of Open Access Journals (Sweden)

    Girish Chandra Thakur

    2015-05-01

    Full Text Available This paper tends to develop for protection for costly appliances which require three-phase AC supply for operation. Failure of any of the phases or sudden change in voltage makes the appliance prone to erratic functioning and may even lead to failure. Hence it is of paramount importance to monitor the availability of the three-phase supply and proper voltage supply and switch off the appliance in the event of failure of one or two phases or if required voltage level is not available. The power to the appliance should resume with the availability of all phases of the supply with proper voltage level. The main advantage of this protector circuit is that it protects three-phase appliances from failure of any phase as well as from fluctuation of voltage. The concept in future can be extended to developing a mechanism to send message to the authority via SMS by interfacing GSM modem. Details description of all types of faults is given below.

  19. Temperature trend biases

    Science.gov (United States)

    Venema, Victor; Lindau, Ralf

    2016-04-01

    In an accompanying talk we show that well-homogenized national dataset warm more than temperatures from global collections averaged over the region of common coverage. In this poster we want to present auxiliary work about possible biases in the raw observations and on how well relative statistical homogenization can remove trend biases. There are several possible causes of cooling biases, which have not been studied much. Siting could be an important factor. Urban stations tend to move away from the centre to better locations. Many stations started inside of urban areas and are nowadays more outside. Even for villages the temperature difference between the centre and edge can be 0.5°C. When a city station moves to an airport, which often happened around WWII, this takes the station (largely) out of the urban heat island. During the 20th century the Stevenson screen was established as the dominant thermometer screen. This screen protected the thermometer much better against radiation than earlier designs. Deficits of earlier measurement methods have artificially warmed the temperatures in the 19th century. Newer studies suggest we may have underestimated the size of this bias. Currently we are in a transition to Automatic Weather Stations. The net global effect of this transition is not clear at this moment. Irrigation on average decreases the 2m-temperature by about 1 degree centigrade. At the same time, irrigation has increased significantly during the last century. People preferentially live in irrigated areas and weather stations serve agriculture. Thus it is possible that there is a higher likelihood that weather stations are erected in irrigated areas than elsewhere. In this case irrigation could lead to a spurious cooling trend. In the Parallel Observations Science Team of the International Surface Temperature Initiative (ISTI-POST) we are studying influence of the introduction of Stevenson screens and Automatic Weather Stations using parallel measurements

  20. Transfer of Kv3.1 voltage sensor features to the isolated Ci-VSP voltage-sensing domain.

    Science.gov (United States)

    Mishina, Yukiko; Mutoh, Hiroki; Knöpfel, Thomas

    2012-08-22

    Membrane proteins that respond to changes in transmembrane voltage are critical in regulating the function of living cells. The voltage-sensing domains (VSDs) of voltage-gated ion channels are extensively studied to elucidate voltage-sensing mechanisms, and yet many aspects of their structure-function relationship remain elusive. Here, we transplanted homologous amino acid motifs from the tetrameric voltage-activated potassium channel Kv3.1 to the monomeric VSD of Ciona intestinalis voltage-sensitive phosphatase (Ci-VSP) to explore which portions of Kv3.1 subunits depend on the tetrameric structure of Kv channels and which properties of Kv3.1 can be transferred to the monomeric Ci-VSP scaffold. By attaching fluorescent proteins to these chimeric VSDs, we obtained an optical readout to establish membrane trafficking and kinetics of voltage-dependent structural rearrangements. We found that motifs extending from 10 to roughly 100 amino acids can be readily transplanted from Kv3.1 into Ci-VSP to form engineered VSDs that efficiently incorporate into the plasma membrane and sense voltage. Some of the functional features of these engineered VSDs are reminiscent of Kv3.1 channels, indicating that these properties do not require interactions between Kv subunits or between the voltage sensing and the pore domains of Kv channels.

  1. Low voltage integrated optics electro-optical modulator applied to optical voltage transformer based on WLI technique

    Science.gov (United States)

    Santos, J. C.; Rubini, J.; Silva, L. P. C.; Caetano, R. E.

    2015-09-01

    The use of two electro-optical modulators linked in series, one for sensing and one for recovering signals, was formerly presented by some of the authors as a solution for interrogation of optical fiber sensor systems based on WLI method. A key feature required from such systems is that half-wave voltage (Vπ) of recovering modulator must be as small as possible. Aiming at meeting this requirement, in this paper it is presented the use of an unbalanced Michelson Interferometer implemented using an integrated optics component as recover interferometer in an optical voltage transformer intended for high voltage measurements.

  2. High Voltage Design Guide. Volume V. Spacecraft

    Science.gov (United States)

    1983-01-01

    connector are soldered, with the possible exception of very high voltage points. Even then rudimentary connectors such as that shown In figura 13 ar used...addition, large stresses will be imposed on the struc- tural (high resistance) member. This conductor movement will flex and stretch the conductors, placing...materials used for airplane systems provided they meet the electrical, chemical, and mechanical characteristic requirements imposed by the design

  3. Behavioral Biases in Interpersonal Contexts

    NARCIS (Netherlands)

    N. Liu (Ning)

    2017-01-01

    markdownabstractThis thesis presents evidence suggesting that the same types of biases in individual decision making under uncertainty pertain in interpersonal contexts. The chapters above demonstrate in specific contexts how specific interpersonal factors attenuate, amplify, or replicate these bias

  4. High-frequency graphene voltage amplifier.

    Science.gov (United States)

    Han, Shu-Jen; Jenkins, Keith A; Valdes Garcia, Alberto; Franklin, Aaron D; Bol, Ageeth A; Haensch, Wilfried

    2011-09-14

    While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The graphene field-effect transistor (GFET) has a 6-finger gate design with gate length of 500 nm. The graphene common-source amplifier exhibits ∼5 dB low frequency gain with the 3 dB bandwidth greater than 6 GHz. This first AC voltage gain demonstration of a GFET is attributed to the clear current saturation in the device, which is enabled by an ultrathin gate dielectric (4 nm HfO(2)) of the embedded gate structures. The device also shows extrinsic transconductance of 1.2 mS/μm at 1 V drain bias, the highest for graphene FETs using large-scale graphene reported to date.

  5. 46 CFR 111.12-7 - Voltage regulation and parallel operation.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Voltage regulation and parallel operation. 111.12-7... ELECTRIC SYSTEMS-GENERAL REQUIREMENTS Generator Construction and Circuits § 111.12-7 Voltage regulation and parallel operation. Voltage regulation and parallel operation must meet: (a) For AC systems: sections...

  6. Promoting Institutional Change Through Bias Literacy

    OpenAIRE

    Carnes, Molly; Devine, Patricia G.; Isaac, Carol; Manwell, Linda Baier; Ford, Cecelia E.; Byars-Winston, Angela; Fine, Eve; Sheridan, Jennifer Thurik

    2012-01-01

    The National Science Foundation and others conclude that institutional transformation is required to ensure equal opportunities for the participation and advancement of men and women in academic science, technology, engineering, mathematics, and medicine (STEMM). Such transformation requires changing the habitual attitudes and behaviors of faculty. Approaching implicit bias as a remediable habit, we present the theoretical basis and conceptual model underpinning an educational intervention to...

  7. Direct detection of the parametrically generated half-harmonic voltage in a Josephson tunnel junction

    DEFF Research Database (Denmark)

    Mygind, Jesper; Pedersen, Niels Falsig; Sørensen, O. H.

    1976-01-01

    The first direct observation of the parametrically generated half-harmonic voltage in a Josephson tunnel junction is reported. A microwave signal at f=17.25 GHz is applied to the junction dc current biased at zero voltage such that the Josephson plasma resonance fp=f/2. Under these conditions a l...... a large-amplitude microwave signal is emitted at fp provided the input power exceeds a threshold value. The results are compared to existing theory. Applied Physics Letters is copyrighted by The American Institute of Physics.......The first direct observation of the parametrically generated half-harmonic voltage in a Josephson tunnel junction is reported. A microwave signal at f=17.25 GHz is applied to the junction dc current biased at zero voltage such that the Josephson plasma resonance fp=f/2. Under these conditions...

  8. Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing

    Energy Technology Data Exchange (ETDEWEB)

    Albin, D.; del Cueto, J.

    2011-03-01

    In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

  9. High Efficiency Power Converter for Low Voltage High Power Applications

    DEFF Research Database (Denmark)

    Nymand, Morten

    , and remote power generation for light towers, camper vans, boats, beacons, and buoys etc. A review of current state-of-the-art is presented. The best performing converters achieve moderately high peak efficiencies at high input voltage and medium power level. However, system dimensioning and cost are often......The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based...... determined by the performance at the system worst case operating point which is usually at minimum input voltage and maximum power. Except for the non-regulating V6 converters, all published solutions exhibit a very significant drop in conversion efficiency at minimum input voltage and maximum output power...

  10. Assessing Bias in Search Engines.

    Science.gov (United States)

    Mowshowitz, Abbe; Kawaguchi, Akira

    2002-01-01

    Addresses the measurement of bias in search engines on the Web, defining bias as the balance and representation of items in a collection retrieved from a database for a set of queries. Assesses bias by measuring the deviation from the ideal of the distribution produced by a particular search engine. (Author/LRW)

  11. Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

    CERN Document Server

    Benoit, M; de Mendizabal, J. Bilbao; Chen, H; Chen, K; Di Bello, F.A; Ferrere, D; Golling, T; Gonzalez-Sevilla, S; Iacobucci, G; Lanni, F; Liu, H; Meng, L; Miucci, A; Muenstermann, D; Nessi, M; Peric, I; Rimoldi, M; Ristic, B; Pinto, M. Vicente Barrero; Vossebeld, J; Weber, M; Wu, W; Xu, L

    2016-01-01

    Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

  12. Reference List About Implicit and Unconscious Bias

    DEFF Research Database (Denmark)

    Munar, Ana Maria; Villeseche, Florence; Weidemann, Cecilie Dam

    The compilation of this reference list is one of the initiatives of the action plan developed by the Council for Diversity and Inclusion at Copenhagen Business School (CBS). This reference list is the first in a series of efforts initiated by this Council to develop an academic resource pool...... and knowledge base on diversity- and inclusion-related topics. An implicit and/or unconscious bias is a bias that we are unaware of and is therefore expressed unwillingly and unknowingly. As recent studies on implicit bias indicate “we now know that the operation of prejudice and stereotyping in social judgment...... and behavior does not require personal animus, hostility, or even awareness. In fact, prejudice is often ‘unconscious’ or ‘implicit’ – that is, unwitting, unintentional, and uncontrollable even among the most well-intentioned people. […] Prejudice also lives and thrives in the banal workings of normal...

  13. Voltage and Current Regulators Design of Power Converters in Islanded Microgrids based on State Feedback Decoupling

    DEFF Research Database (Denmark)

    Federico, de Bosio; de Sousa Ribeiro, Luiz Antonio; Freijedo Fernandez, Francisco Daniel

    2016-01-01

    In stand-alone microgrids based on voltage source inverters state feedback coupling between the capacitor voltage and inductor current degrades significantly the dynamics performance of voltage and current regulators. The decoupling of the controlled states is proposed, considering the limitations...... introduced by system delays. Moreover, a proportional resonant voltage controller is designed according to Nyquist criterion taking into account application requirements. Experimental tests performed in compliance with the UPS standards verify the theoretical analysis....

  14. Unlikely Combination of Experiments With a Novel High-Voltage CIGS Photovoltaic Array: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    del Cueto, J. A.; Sekulic, B. R.

    2006-05-01

    A new high-voltage array comprising bipolar strings of copper indium gallium diselenide (CIGS) photovoltaic (PV) modules was inaugurated in 2005. It is equipped with a unique combination of tests, which likely have never before been deployed simultaneously within a single array: full current-voltage (I-V) traces, high-voltage leakage current measurements, and peak-power tracking or temporal stepped-bias profiling. The array nominally produces 1 kW power at 1 sun. The array's electrical characteristics are continuously monitored and controlled with a programmable electronic load interfaced to a data acquisition system (DAS), that also records solar and meteorological data. The modules are mounted with their frames electrically isolated from earth ground, in order to facilitate measurement of the leakage currents that arise between the high voltage bias developed in the series-connected cells and modules and their mounting frames. Because the DAS can perform stepped biasing of the array as a function of time, synchronous detection of the leakage current data with alternating bias is available. Leakage current data and their dependence on temperature and voltage are investigated. Array power data are analyzed across a wide range of varying illuminations and temperatures from the I-V traces. Array performance is also analyzed from an energy output perspective using peak-power tracking data.

  15. Flow reversal at low voltage and low frequency in a microfabricated ac electrokinetic pump

    DEFF Research Database (Denmark)

    Gregersen, Misha Marie; Olesen, Laurits Højgaard; Brask, Anders

    2007-01-01

    Microfluidic chips have been fabricated in Pyrex glass to study electrokinetic pumping generated by a low-voltage ac bias applied to an in-channel asymmetric metallic electrode array. A measurement procedure has been established and followed carefully resulting in a high degree of reproducibility...... of the measurements over several days. A large coverage fraction of the electrode array in the microfluidic channels has led to an increased sensitivity allowing for pumping measurements at low bias voltages. Depending on the ionic concentration a hitherto unobserved reversal of the pumping direction has been...

  16. Effect of Discharge Voltage on an Ion Sheath Formed at a Grid in a Multi-Dipole Discharge Plasma

    Institute of Scientific and Technical Information of China (English)

    M.K.Mishra; A.Phukan

    2008-01-01

    @@ It is experimentally demonstrated that a relatively strong ion-rich sheath formed at a fixed negative bias of the grid can be changed to arather weak ion sheath(sheath potential weakly retards dectrons)only by increasing the discharge voltage in the system.At sufficiently high negative grid bias,an increase of discharge voltage enhances the ion collection current at the grid.An explanation is put forward in support of this experimental observation.A slight density enhancement with a fall in plasma electron temperature is also observed with the increasing negative grid bias.

  17. High voltage systems (tube-type microwave)/low voltage system (solid-state microwave) power distribution

    Science.gov (United States)

    Nussberger, A. A.; Woodcock, G. R.

    1980-01-01

    SPS satellite power distribution systems are described. The reference Satellite Power System (SPS) concept utilizes high-voltage klystrons to convert the onboard satellite power from dc to RF for transmission to the ground receiving station. The solar array generates this required high voltage and the power is delivered to the klystrons through a power distribution subsystem. An array switching of solar cell submodules is used to maintain bus voltage regulation. Individual klystron dc voltage conversion is performed by centralized converters. The on-board data processing system performs the necessary switching of submodules to maintain voltage regulation. Electrical power output from the solar panels is fed via switch gears into feeder buses and then into main distribution buses to the antenna. Power also is distributed to batteries so that critical functions can be provided through solar eclipses.

  18. Current-biased Transition-edge Sensors Based on Re-entrant Superconductors

    Science.gov (United States)

    Gulian, A.; Nikoghosyan, V.; Tollaksen, J.; Vardanyan, V.; Kuzanyan, A.

    Transition-edge sensors are widely recognized as one of the most sensitive tools for the photon and particles detection in many areas, from astrophysics to quantum computing. Their application became practical after understanding that rather than being biased in a constant current mode, they should be biased in a constant voltage mode. Despite the methods of voltage biasing of these sensors are well developed since then, generally the current biasing is more convenient for superconducting circuits. Thus transition-edge sensors designed inherently to operate in the current-biased mode are desirable. We developed a design for such detectors based on re-entrant superconductivity. In this case constant current biasing takes place in the normal state, below the superconducting transition, so that following the absorption of a photon it does not yield a latching. Rather, the sensor gains energy and shifts towards the lower resistant (e.g., superconducting) state, and then cools down faster (since Joule heating is now reduced), and resets in a natural way to be able to detect the next photon. We prototyped this kind of transition edge sensors and tested them operational in accordance with the outlined physics. The samples used in experiments were modified compositions of YBCO-superconductors in a ceramic form (which, as we discovered, reproducibly demonstrates re-entrant superconductivity). In this presentation we report their composition, methods of preparation, and the detection results. This approach, in some areas, may have practical advantage over the traditional voltage-biased devices.

  19. Bias aware Kalman filters

    DEFF Research Database (Denmark)

    Drecourt, J.-P.; Madsen, H.; Rosbjerg, Dan

    2006-01-01

    . The colored noise filter formulation is extended to correct both time correlated and uncorrelated model error components. A more stable version of the separate filter without feedback is presented. The filters are implemented in an ensemble framework using Latin hypercube sampling. The techniques...... are illustrated on a simple one-dimensional groundwater problem. The results show that the presented filters outperform the standard Kalman filter and that the implementations with bias feedback work in more general conditions than the implementations without feedback. 2005 Elsevier Ltd. All rights reserved....

  20. Skill-Biased Technological Change in Denmark

    DEFF Research Database (Denmark)

    Malchow-Møller, Nikolaj; Rose Skaksen, Jan

    2003-01-01

    Skill-Biased Technological Change in Denmark:A Disaggregate Perspective@*In this paper, we provide an industry-level analysis of skill-biased technological change(SBTC) in Denmark over the last two decades. The analysis shows that SBTC has variedconsiderably across industries, and traditionally l...... information aboutfuture labour requirements, as the relative importance of these industries must be expectedto grow, thereby reinforcing the shift in demand for skilled labour.JEL Classification: J24, J31, L6Keywords: skill-biased technological change, Danish industries......Skill-Biased Technological Change in Denmark:A Disaggregate Perspective@*In this paper, we provide an industry-level analysis of skill-biased technological change(SBTC) in Denmark over the last two decades. The analysis shows that SBTC has variedconsiderably across industries, and traditionally...... large Danish industries have experiencedrelatively less SBTC. This may partly explain why wage inequality between skilled and lessskilled has risen less in Denmark than in other countries. We also find that SBTC has beenconcentrated in already skill-intensive industries. This contains important...

  1. Operation and biasing for single device equivalent to CMOS

    Science.gov (United States)

    Welch, James D.

    2001-01-01

    Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of field induced carriers. In particular, inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems, which can be operated as modulators, are disclosed as are a non-latching SCR and an approach to blocking parasitic currents. Operation of the gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems under typical bias schemes is described, and simple demonstrative five mask fabrication procedures for the inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.

  2. Reduction in plasma potential by applying negative DC cathode bias in RF magnetron sputtering

    Science.gov (United States)

    Isomura, Masao; Yamada, Toshinori; Osuga, Kosuke; Shindo, Haruo

    2016-11-01

    We applied a negative DC bias voltage to the cathode of an RF magnetron sputtering system and successfully reduced the plasma potential in both argon plasma and hydrogen-diluted argon plasma. The crystallinity of the deposited Ge films is improved by increasing the negative DC bias voltage. It is indicated that the reduction in plasma potential is effective for reducing the plasma damage on deposited materials, caused by the electric potential between the plasma and substrates. In addition, the deposition rate is increased by the increased electric potential between the plasma and the cathode owing to the negative DC bias voltage. The present method successfully gives us higher speed and lower damage sputtering deposition. The increased electric potential between the plasma and the cathode suppresses the evacuation of electrons from the plasma and also enhances the generation of secondary electrons on the cathode. These probably suppress the electron loss from the plasma and result in the reduction in plasma potential.

  3. Choice of operating voltage for a transmission electron microscope

    Energy Technology Data Exchange (ETDEWEB)

    Egerton, R.F., E-mail: regerton@ualberta.ca

    2014-10-15

    An accelerating voltage of 100–300 kV remains a good choice for the majority of TEM or STEM specimens, avoiding the expense of high-voltage microscopy but providing the possibility of atomic resolution even in the absence of lens-aberration correction. For specimens thicker than a few tens of nm, the image intensity and scattering contrast are likely to be higher than at lower voltage, as is the visibility of ionization edges below 1000 eV (as required for EELS elemental analysis). In thick (>100 nm) specimens, higher voltage ensures less beam broadening and better spatial resolution for STEM imaging and EDX spectroscopy. Low-voltage (e.g. 30 kV) TEM or STEM is attractive for a very thin (e.g. 10 nm) specimen, as it provides higher scattering contrast and fewer problems for valence-excitation EELS. Specimens that are immune to radiolysis suffer knock-on damage at high current densities, and this form of radiation damage can be reduced or avoided by choosing a low accelerating voltage. Low-voltage STEM with an aberration-corrected objective lens (together with a high-angle dark-field detector and/or EELS) offers atomic resolution and elemental identification from very thin specimens. Conventional TEM can provide atomic resolution in low-voltage phase-contrast images but requires correction of chromatic aberration and preferably an electron-beam monochromator. Many non-conducting (e.g. organic) specimens damage easily by radiolysis and radiation damage then determines the TEM image resolution. For bright-field scattering contrast, low kV can provide slightly better dose-limited resolution if the specimen is very thin (a few nm) but considerably better resolution is possible from a thicker specimen, for which higher kV is required. Use of a phase plate in a conventional TEM offers the most dose-efficient way of achieving atomic resolution from beam-sensitive specimens. - Highlights: • 100–300 kV accelerating voltage is suitable for TEM specimens of typical

  4. Halftone biasing OPC technology: an approach for achieving fine bias control on raster-scan systems

    Science.gov (United States)

    Nakagawa, Kent H.; Chen, J. Fung; Socha, Robert J.; Laidig, Thomas L.; Wampler, Kurt E.; Van Den Broeke, Douglas J.; Dusa, Mircea V.; Caldwell, Roger F.

    1999-08-01

    As the semiconductor roadmap continues to require imaging of smaller features on wafers, we continue to explore new approaches in OPC strategies to enhance existing technology. Advanced reticle design, intended for printing sub-wavelength features, requires the support of very fine-increment biases on semi-densely-pitched lines, where the CD correction requires only a fraction of the spot size of an e-beam system. Halftone biasing, a new OPC strategy, has been proposed to support these biases on a raster-scan e-beam system without the need for a reduced address unit and the consequent write time penalty. The manufacturability and inspectability of halftone-biased lines are explored, using an OPC characterization reticle. Pattern fidelity is examined using both optical and SEM tools. Printed DUV resist line edge profiles are compared for both halftone and non-halftone feature edges. Halftone biasing was applied to an SRAM-type simulation reticle, to examine its impact on data volume, write time reduction, and printing performance.

  5. CMOS voltage references an analytical and practical perspective

    CERN Document Server

    Kok, Chi-Wah

    2013-01-01

    A practical overview of CMOS circuit design, this book covers the technology, analysis, and design techniques of voltage reference circuits.  The design requirements covered follow modern CMOS processes, with an emphasis on low power, low voltage, and low temperature coefficient voltage reference design. Dedicating a chapter to each stage of the design process, the authors have organized the content to give readers the tools they need to implement the technologies themselves. Readers will gain an understanding of device characteristics, the practical considerations behind circuit topology,

  6. Long term characterization of voltage references

    CERN Document Server

    Halloin, Hubert; Brossard, Julien

    2013-01-01

    We report here the characterization (temperature coefficients and noise level) of selected voltage references in the frequency range from 10^(-5) to 10 Hz. The goal of this work is to update previous studies, with a characterization at lower frequencies, and find voltage references that may be suitable for the space-based interferometry mission eLISA. The requirements of relative output stability of 1 ppm/$\\sqrt{\\text{Hz}}$ down to 0.1 mHz were not met by any of the tested devices, but 4 references approaches the objective : the AD587UQ, the MAX6126AASA50, the LT1021-BCN8-5 and the LT6655BHM. While the first three were already identified as potential devices in previous studies, the later is a new promising candidate using a different technology (bandgap).

  7. High voltage source control on FODS

    Science.gov (United States)

    Patalakha, D. I.; Kalinin, A. Yu; Kulagin, N. V.

    2017-01-01

    The implementation of the high voltage power supply control system (HVPSCS) for experimental setup FODS (FOcusing Doublearmed Spectrometer) at accelerator U-70 of the Federal State Budgetary Institution State Research Center Of Russia Institute for High Energy Physics of the National Research Centre “Kurchatov Institute” (hereinafter referred to as IHEP) or for the test bench of the detector components is considered. The required set of hardware is defined and the appropriate software to operate HVPSCS is written in C/C++ codes. The date acquisition (DAQ) system [1] makes automatic control on HVPSCS for data taking run. It allows to get the dependence of appropriate detector parameters on the high voltage supply values and choose its optimal values for FODS detectors. The test run results of HVPSCS are presented.

  8. Voltage Sensors Monitor Harmful Static

    Science.gov (United States)

    2009-01-01

    A tiny sensor, small enough to be worn on clothing, now monitors voltage changes near sensitive instruments after being created to alert Agency workers to dangerous static buildup near fuel operations and avionics. San Diego s Quasar Federal Systems received a Small Business Innovation Research (SBIR) contract from Kennedy Space Center to develop its remote voltage sensor (RVS), a dime-sized electrometer designed to measure triboelectric changes in the environment. One of the unique qualities of the RVS is that it can detect static at greater distances than previous devices, measuring voltage changes from a few centimeters to a few meters away, due to its much-improved sensitivity.

  9. Experimental Operation of SSC RF Cavities at Higher Voltage

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    For many years,SSC RF cavities were operated at about half of its designing voltages,which are from 100 kV at 6.5 MHz to 250 kV at 14.5 MHz respectively.But,with the construction of new project HIRFL-CSR,high intensity beams are required to be extracted from SSC.Therefore,in order to achieve this aim,SSC Dee voltages must be enhanced to higher operation level.

  10. A New Phase-Shifted Cascade High Voltage Inverter

    Institute of Scientific and Technical Information of China (English)

    Lau Eng Tin

    2005-01-01

    This paper presents a unique novel design of the phase-shifted cascade high voltage inverter. Thehigh voltage inverter utilizes fewer power switches and supplies a balance load. The usage of phase shifttransformer and phase shifting SPWM ensures that input and output harmonic wave content is low and outputvoltage change (du/dt) has a low rate, meeting all the requirements of the power authorities. The most out-standing feature is the energy saving with very fast cost recovery.

  11. Editorial bias in scientific publications.

    Science.gov (United States)

    Matías-Guiu, J; García-Ramos, R

    2011-01-01

    Many authors believe that there are biases in scientific publications. Editorial biases include publication bias; which refers to those situations where the results influence the editor's decision, and editorial bias refers to those situations where factors related with authors or their environment influence the decision. This paper includes an analysis of the situation of editorial biases. One bias is where mainly articles with positive results are accepted, as opposed to those with negative results. Another is latent bias, where positive results are published before those with negative results. In order to examine editorial bias, this paper analyses the influence of where the article originated; the country or continent, academic centre of origin, belonging to cooperative groups, and the maternal language of the authors. The article analyses biases in the editorial process in the publication of funded clinical trials. Editorial biases exists. Authors, when submitting their manuscript, should analyse different journals and decide where their article will receive adequate treatment. Copyright © 2010 Sociedad Española de Neurología. Published by Elsevier Espana. All rights reserved.

  12. Efficient Low Voltage Amplification Using Self Starting Voltage Regulator for Storage System

    Directory of Open Access Journals (Sweden)

    Haslinah Binti Mohd Nasir

    2014-10-01

    Full Text Available This paper presents a storage system design based on energy harvesting to achieve batteryless for Wireless Sensor Network (WSN application. The storage system is part of the Wireless Sensor Energy Harvesting to store and amplify the energy harvested from the surroundings. Finding a new sources of renewable energy has becomes a fashionable among researchers nowadays in particular harvesting the energy from the surrounding. However the challenge raised is to boost up the energy that known are very low. Thus the proposed method must be consumes very little power and suitable for ambient environmental sources such as vibration, wind and RF energy and be able to boost up the energy for storage system. The output of the harvested voltage is insufficient for most applications, therefore the system will boost up the input voltage level using DC to DC converter topology to higher dc voltage.The DC to DC converter shall be designed to suit the types of storage required. The output voltage of this DC converter should be sufficient to charge either capacitor or supercapacitor that will be use in this system as the energy storage system. The supercapacitor will provide power to energize any system such as in this case wireless sensor network[1]. In the case of wireless sensor network for example, the node would require the energy during transmitting and receiving data only whereas during standby mode or sleep mode, the amount of energy required would be very small[2]. Therefore the storage system will make use of this standby time or sleep mode of the sensor node to store as much energy as possible. The presented DC to DC converter in this paper has high efficiency upto 85.4% with input voltage between range 300mV to 600mV.

  13. Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping

    Science.gov (United States)

    Yen, Cheng-Tyng; Hung, Chien-Chung; Hung, Hsiang-Ting; Lee, Chwan-Ying; Lee, Lurng-Shehng; Huang, Yao-Feng; Hsu, Fu-Jen

    2016-01-01

    We investigated the negative bias temperature instability (NBTI) characteristics of 4H-SiC metal oxide semiconductor field effect transistor (MOSFET) and metal oxide semiconductor capacitor (MOSCAP). The shift of threshold voltage approached saturation with time, and the different magnitude of mid-gap voltage shift with different starting biases observed in capacitance-voltage (CV) curves taken from MOSCAP and MOSFET suggested that the hole trapping was the primary mechanism contributing to the NBTI in this study. The trend of mid-gap voltage shift with starting bias and threshold voltage shift with stress bias showed steep change before -10 V and approached saturation after -10 V which can be explained by a process where the hole trapping was assisted by positively charged interface states. The positively charged interface states may have acted as an intermediate state which reduced the overall energy barrier and facilitated the process of hole trapping. The split-CV sweeps with 0 s and 655 s of hold time were essentially overlapped which was consistent with the time evolution characteristic of hole trapping and supported the interface trap assisted hole trapping mechanism.

  14. Research and Experiments on a Unipolar Capacitive Voltage Sensor

    Directory of Open Access Journals (Sweden)

    Qiang Zhou

    2015-08-01

    Full Text Available Voltage sensors are an important part of the electric system. In service, traditional voltage sensors need to directly contact a high-voltage charged body. Sensors involve a large volume, complex insulation structures, and high design costs. Typically an iron core structure is adopted. As a result, ferromagnetic resonance can occur easily during practical application. Moreover, owing to the multilevel capacitor divider, the sensor cannot reflect the changes of measured voltage in time. Based on the electric field coupling principle, this paper designs a new voltage sensor; the unipolar structure design solves many problems of traditional voltage sensors like the great insulation design difficulty and high costs caused by grounding electrodes. A differential signal input structure is adopted for the detection circuit, which effectively restrains the influence of the common-mode interference signal. Through sensor modeling, simulation and calculations, the structural design of the sensor electrode was optimized, miniaturization of the sensor was realized, the voltage division ratio of the sensor was enhanced, and the phase difference of sensor measurement was weakened. The voltage sensor is applied to a single-phase voltage class line of 10 kV for testing. According to the test results, the designed sensor is able to meet the requirements of accurate and real-time measurement for voltage of the charged conductor as well as to provide a new method for electricity larceny prevention and on-line monitoring of the power grid in an electric system. Therefore, it can satisfy the development demands of the smart power grid.

  15. Outcome predictability biases learning.

    Science.gov (United States)

    Griffiths, Oren; Mitchell, Chris J; Bethmont, Anna; Lovibond, Peter F

    2015-01-01

    Much of contemporary associative learning research is focused on understanding how and when the associative history of cues affects later learning about those cues. Very little work has investigated the effects of the associative history of outcomes on human learning. Three experiments extended the "learned irrelevance" paradigm from the animal conditioning literature to examine the influence of an outcome's prior predictability on subsequent learning of relationships between cues and that outcome. All 3 experiments found evidence for the idea that learning is biased by the prior predictability of the outcome. Previously predictable outcomes were readily associated with novel predictive cues, whereas previously unpredictable outcomes were more readily associated with novel nonpredictive cues. This finding highlights the importance of considering the associative history of outcomes, as well as cues, when interpreting multistage designs. Associative and cognitive explanations of this certainty matching effect are discussed.

  16. Low Voltage Power Supply Incorporating Ceramic Transformer

    CERN Document Server

    Imori, M

    2007-01-01

    A low voltage power supply provides the regulated output voltage of 1 V from the supply voltage around 48 V. The low voltage power supply incorporates a ceramic transformer which utilizes piezoelectric effect to convert voltage. The ceramic transformer isolates the secondary from the primary, thus providing the ground isolation between the supply and the output voltages. The ceramic transformer takes the place of the conventional magnetic transformer. The ceramic transformer is constructed from a ceramic bar and does not include any magnetic material. So the low voltage power supply can operate under a magnetic field. The output voltage is stabilized by feedback. A feedback loop consists of an error amplifier, a voltage controlled oscillator and a driver circuit. The amplitude ratio of the transformer has dependence on the frequency, which is utilized to stabilize the output voltage. The low voltage power supply is investigated on the analogy of the high voltage power supply similarly incorporating the cerami...

  17. Modular High Voltage Power Supply

    Energy Technology Data Exchange (ETDEWEB)

    Newell, Matthew R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-05-18

    The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

  18. Dynamic voltage regulation and power export in a distribution system using distributed generation

    Institute of Scientific and Technical Information of China (English)

    Aamir HANIF; Muhammad Ahmed CHOUDHRY

    2009-01-01

    The major aim of power quality (PQ) enhancing techniques is to maintain a specified voltage magnitude at a desired frequency for sensitive loads irrespective of faults on the power distribution network. The dynamic voltage restorer (DVR) is a device used to mitigate voltage sags to regulate load voltage. This paper presents a mathematical model for leading series voltage injection to mitigate sags thereby achieving the improvement of the utility power factor as well as power sharing between the DVR and utility. The power sharing will be as per requirement to compensate the sags considering the available distributed generation (DG). The approach of mitigating voltage sags using the concept of leading series voltage injection is suitable for those locations where phase shift in the voltage will not cause any problem. The MATLAB/SIMULINK SimPowerSystem toolbox has been used to obtain simulation results to verify the proposed mathematical model.

  19. Flexible voltage support control for three-phase distributed generation inverters under grid fault

    DEFF Research Database (Denmark)

    Camacho, Antonio; Castilla, Miguel; Miret, Jaume

    2013-01-01

    Operators describe the behavior of the energy source, regulating voltage limits and reactive power injection to remain connected and support the grid under fault. On the basis that different kinds of voltage sags require different voltage support strategies, a flexible control scheme for three phase grid......Ancillary services for distributed generation systems become a challenging issue to smartly integrate renewable energy sources into the grid. Voltage control is one of these ancillary services which can ride through and support the voltage under grid faults. Grid codes from the Transmission System...... connected inverters is proposed. In three phase balanced voltage sags, the inverter should inject reactive power in order to raise the voltage in all phases. In one or two phase faults, the main concern of the distributed generation inverter is to equalize voltages by reducing the negative symmetric...

  20. Thermally-induced voltage alteration for integrated circuit analysis

    Energy Technology Data Exchange (ETDEWEB)

    Cole, Jr., Edward I. (Albuquerque, NM)

    2000-01-01

    A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

  1. Thermally-induced voltage alteration for integrated circuit analysis

    Energy Technology Data Exchange (ETDEWEB)

    Cole, E.I. Jr.

    2000-06-20

    A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing an integrated circuit (IC) either from a device side of the IC or through the IC substrate to locate any open-circuit or short-circuit defects therein. The TIVA apparatus uses constant-current biasing of the IC while scanning a focused laser beam over electrical conductors (i.e. a patterned metallization) in the IC to produce localized heating of the conductors. This localized heating produces a thermoelectric potential due to the Seebeck effect in any conductors with open-circuit defects and a resistance change in any conductors with short-circuit defects, both of which alter the power demand by the IC and thereby change the voltage of a source or power supply providing the constant-current biasing. By measuring the change in the supply voltage and the position of the focused and scanned laser beam over time, any open-circuit or short-circuit defects in the IC can be located and imaged. The TIVA apparatus can be formed in part from a scanning optical microscope, and has applications for qualification testing or failure analysis of ICs.

  2. Reliability criteria for voltage stability

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, Carson W.; Silverstein, Brian L. [Bonneville Power Administration, Portland, OR (United States)

    1994-12-31

    In face of costs pressures, there is need to allocate scare resources more effectively in order to achieve voltage stability. This naturally leads to development of probabilistic criteria and notions of rick management. In this paper it is presented a discussion about criteria for long term voltage stability limited to the case in which the time frames are topically several minutes. (author) 14 refs., 1 fig.

  3. A Voltage Quality Detection Method

    DEFF Research Database (Denmark)

    Chen, Zhe; Wei, Mu

    2008-01-01

    This paper presents a voltage quality detection method based on a phase-locked loop (PLL) technique. The technique can detect the voltage magnitude and phase angle of each individual phase under both normal and fault power system conditions. The proposed method has the potential to evaluate vario...... power quality disturbances, such as interruptions, sags and imbalances. Simulation studies have been performed. The effectiveness of the proposed method has been demonstrated under the simulated typical power disturbances....

  4. Voltage Collapse Risk Associated to Under-Voltage Capacitive Compensation in Electric Power System Operation

    Directory of Open Access Journals (Sweden)

    Heraldo S. Barbuy

    2009-01-01

    Full Text Available Problem statement: In the operation of an Electric Power System (EPS, it has been usual to provide reactive power injection to avoid an under-voltage bus condition. In some situations an adequate voltage profile will not be a guarantee against Voltage Collapses (VCs that may cause blackouts as seen in many occurrences around the world. The repeatedly injection of reactive power can turn a bus into a characteristic too much capacitive. Under this condition and in the presence of a considerable percentage of the constant power load type, there will be a high risk of a VC. Any of the indices proposed in the literature as VC Proximity Indicators (VCPIs may alert the operator about the risk. Approach: In order to elucidate the problem stated, simulations were performed using MatLab/SimPowerSystems. It was used a basic example system composed by an infinite-bus feeding, through a large impedance line, a bus load whose power could be increased in ramp manner. It is also included a shunt capacitive compensation at the load bus every time the voltage value reaches 0.9 pu. Therefore, the VC risk increase could be shown by means of graphic results and the indications of some VCPIs sensitivity indices (including the new proposed index. Results: The graphics obtained in this study is a contribution to illustrate the voltage collapse risk problem when dealing with adjustments of voltage profile to meet the system requirements. Also, a VCPI sensitivity indicator using apparent load power was tested. The results have shown that all VCPI responses are very similar for a given case and electric system. Conclusion/Recommendations: Any VCPI information can help in the decision stage between either more reactive power injection or load shedding. A routine can also be developed for a supervisory program in order to alert the operator about VC risks.

  5. Self-calibration method of the bias of a space electrostatic accelerometer

    Science.gov (United States)

    Qu, Shao-Bo; Xia, Xiao-Mei; Bai, Yan-Zheng; Wu, Shu-Chao; Zhou, Ze-Bing

    2016-11-01

    The high precision space electrostatic accelerometer is an instrument to measure the non-gravitational forces acting on a spacecraft. It is one of the key payloads for satellite gravity measurements and space fundamental physics experiments. The measurement error of the accelerometer directly affects the precision of gravity field recovery for the earth. This paper analyzes the sources of the bias according to the operating principle and structural constitution of the space electrostatic accelerometer. Models of bias due to the asymmetry of the displacement sensing system, including the mechanical sensor head and the capacitance sensing circuit, and the asymmetry of the feedback control actuator circuit are described separately. According to the two models, a method of bias self-calibration by using only the accelerometer data is proposed, based on the feedback voltage data of the accelerometer before and after modulating the DC biasing voltage (Vb) applied on its test mass. Two types of accelerometer biases are evaluated separately using in-orbit measurement data of a space electrostatic accelerometer. Based on the preliminary analysis, the bias of the accelerometer onboard of an experiment satellite is evaluated to be around 10-4 m/s2, about 4 orders of magnitude greater than the noise limit. Finally, considering the two asymmetries, a comprehensive bias model is analyzed. A modified method to directly calibrate the accelerometer comprehensive bias is proposed.

  6. A matter of quantum voltages.

    Science.gov (United States)

    Sellner, Bernhard; Kathmann, Shawn M

    2014-11-14

    Voltages inside matter are relevant to crystallization, materials science, biology, catalysis, and aqueous chemistry. The variation of voltages in matter can be measured by experiment, however, modern supercomputers allow the calculation of accurate quantum voltages with spatial resolutions of bulk systems well beyond what can currently be measured provided a sufficient level of theory is employed. Of particular interest is the Mean Inner Potential (V(o))--the spatial average of these quantum voltages referenced to the vacuum. Here we establish a protocol to reliably evaluate V(o) from quantum calculations. Voltages are very sensitive to the distribution of electrons and provide metrics to understand interactions in condensed phases. In the present study, we find excellent agreement with measurements of V(o) for vitrified water and salt crystals and demonstrate the impact of covalent and ionic bonding as well as intermolecular/atomic interactions. Certain aspects in this regard are highlighted making use of simple model systems/approximations. Furthermore, we predict V(o) as well as the fluctuations of these voltages in aqueous NaCl electrolytes and characterize the changes in their behavior as the resolution increases below the size of atoms.

  7. Diffusion voltage in polymer light emitting diodes measured with electric field induced second harmonic generation

    Energy Technology Data Exchange (ETDEWEB)

    Kristensen, P.K.; Rafaelsen, J.; Pedersen, T.G.; Pedersen, K. [Department of Physics and Nanotechnology, Aalborg University, Pontoppidanstraede 103, 9220 Aalborg East (Denmark)

    2005-12-01

    We apply electric field induced second harmonic (EFISH) to polymer light emitting diodes (PLEDs) and demonstrate the ability to determine the diffusion voltage in PLED devices. The EFISH signal is proportional to the square of the effective field, which is the sum of the diffusion voltage and the applied voltage. By minimizing the EFISH-signal as a function of the applied voltage, the diffusion voltage is determined by measuring the applied voltage that cancels out the diffusion voltage. The PLEDs are fabricated with indium tin oxide (ITO) as the hole injecting contact and two different electron injecting contacts, namely aluminum and calcium. The diffusion voltage originates from the rearranged charges caused by the difference in Fermi levels in the materials in the PLEDs. Different contacts will thus cause different diffusion voltages. We demonstrate here that the EFISH signal is proportional to the square of the effective field in both reverse and forward bias, and discuss the dependence on contact materials. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. VOLTAGE COMPENSATION USING ARTIFICIAL NEURAL NETWORK

    African Journals Online (AJOL)

    VOLTAGE COMPENSATION USING ARTIFICIAL NEURAL NETWORK: A CASE STUDY OF RUMUOLA DISTRIBUTION NETWORK. ... The artificial neural networks controller engaged to controlling the dynamic voltage ... Article Metrics.

  9. High Bandwidth Zero Voltage Injection Method for Sensorless Control of PMSM

    DEFF Research Database (Denmark)

    Ge, Xie; Lu, Kaiyuan; Kumar, Dwivedi Sanjeet

    2014-01-01

    High frequency signal injection is widely used in PMSM sensorless control system for low speed operations. The conventional voltage injection method often needs filters to obtain particular harmonic component in order to estimate the rotor position; or it requires several voltage pulses to be inj...... in a fast current regulation performance. Injection of zero voltage also minimizes the inverter voltage error effects caused by the dead-time.......High frequency signal injection is widely used in PMSM sensorless control system for low speed operations. The conventional voltage injection method often needs filters to obtain particular harmonic component in order to estimate the rotor position; or it requires several voltage pulses...... to be injected before the position may be estimated. In this paper, a single pulse zero voltage injection method is proposed. The rotor position is directly estimated from the current ripple at half of the switching frequency. No machine parameters are needed and using of filters is avoided. This results...

  10. Theoretical investigation of exchange bias

    Institute of Scientific and Technical Information of China (English)

    Xiong Zhi-Jie; Wang Huai-Yu; Ding Ze-Jun

    2007-01-01

    The exchange bias of bilayer magnetic films consisting of ferromagnetic (FM) and antiferromagnetic (AFM) layers in an uncompensated case is studied by use of the many-body Green's function method of quantum statistical theory.The effects of the layer thickness and temperature and the interfacial coupling strength on the exchange bias HE are investigated. The dependence of the exchange bias HE on the FM layer thickness and temperature is qualitatively in agreement with experimental results. When temperature varies, both the coercivity HC and HE decrease with the temperature increasing. For each FM thickness, there exists a least AFM thickness in which the exchange bias occurs,which is called pinning thickness.

  11. Magnetic flux biasing of magnetostrictive sensors

    Science.gov (United States)

    Deng, Zhangxian; Dapino, Marcelo J.

    2017-05-01

    The performance of magnetostrictive materials, especially those with high initial magnetic permeability and associated low magnetic reluctance, is sensitive to not just the amount of magnetic bias but also how the bias is applied. Terfenol-D and Galfenol have been characterized under constant magnetic field and constant magnetomotive force, which require active control. The application of a magnetic flux bias utilizing permanent magnets allows for robust magnetostrictive systems that require no active control. However, this biasing configuration has not been thoroughly investigated. This study presents flux density versus stress major loops of Terfenol-D and Galfenol at various magnetic flux biases. A new piezomagnetic coefficient {d}33φ is defined as the locally-averaged slope of flux density versus stress. Considering the materials alone, the maximum {d}33φ is 18.42 T GPa-1 and 19.53 T GPa-1 for Terfenol-D and Galfenol, respectively. Compared with the peak piezomagnetic coefficient {d}33* measured under controlled magnetic fields, the piezomagnetic coefficient {d}33φ is 26% and 74% smaller for Terfenol-D and Galfenol, respectively. This study shows that adding parallel magnetic flux paths to low-reluctance magnetostrictive components can partially compensate for the performance loss. With a low carbon steel flux path in parallel to the Galfenol specimen, the maximum {d}33φ increased to 28.33 T GPa-1 corresponding to a 45% improvement compared with the case without a flux path. Due to its low magnetic permeability, Terfenol-D does not benefit from the addition of a parallel flux path.

  12. Influence of reverse bias on the LEDs properties used as photo-detectors in VLC systems

    Science.gov (United States)

    Kowalczyk, Marcin; Siuzdak, Jerzy

    2015-09-01

    Continuous increasing share of light emitting diodes (LEDs) in a lighting market, which we observe during the last couple years, opens new possibilities. Especially, when we talk about practical realization the concept of visible light communications (VLC), which gains on popularity recently. The VLC concept presupposes utilization of illumination systems for a purpose of data transmission. It means, the emitters, in this case the LEDs, will not of a light source only, but also the data transmitters. Currently, most of the conducted researches in this area is concentrated on achievement of effective transmission methods. It means a transmission only in one direction. This is not enough, when we talk about the fully functional transmission system. Ensuring of feedback transmission channel is a necessary also. One of the ideas, which was postulated by authors of this article, is using for this purpose the LEDs in a double role. A utilization of LEDs as photo-detectors requires a reverse polarization, in contrast to a forward bias, which has a place when they work as light emitters. Ensuring of proper polarization get significant meaning. The article presents the investigations results on the influence of reverse bias on photo-receiving properties of LEDs used as light detectors. The conducted research proved that an improvement of sensitivity and bandwidth parameters are possible by application of appropriate value of the reverse voltage in a receiver.

  13. Capacitance-voltage characteristics of GaAs ion-implanted structures

    Directory of Open Access Journals (Sweden)

    Privalov E. N.

    2008-08-01

    Full Text Available A noniterative numerical method is proposed to calculate the barrier capacitance of GaAs ion-implanted structures as a function of the Schottky barrier bias. The features of the low- and high-frequency capacitance-voltage characteristics of these structures which are due to the presence of deep traps are elucidated.

  14. Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors

    NARCIS (Netherlands)

    Mathijssen, Simon G. J.; Colle, Michael; Gomes, Henrique; Smits, Edsger C. P.; de Boer, Bert; McCulloch, Iain; Bobbert, Peter A.; de Leeuw, Dago M.; Cölle, Michael

    2007-01-01

    The electrical instability of organic field-effect transistors is investigated. We observe that the threshold-voltage shift (see figure) shows a stretched-exponential time dependence under an applied gate bias. The activation energy of 0.6 eV is common for our and all other organic transistors repor

  15. Electrode voltage fall and total voltage of a transient arc

    Science.gov (United States)

    Valensi, F.; Ratovoson, L.; Razafinimanana, M.; Masquère, M.; Freton, P.; Gleizes, A.

    2016-06-01

    This paper deals with an experimental study of the components of a transient arc total voltage with duration of a few tens of ms and a current peak close to 1000 A. The cathode tip is made of graphite whereas the flat anode is made either of copper or of graphite; the electrodes gap is a few mm. The analysis of the electrical parameters is supported and validated by fast imaging and by two models: the first one is a 2D physical model of the arc allowing to calculate both the plasma temperature field and the arc voltage; the second model is able to estimate the transient heating of the graphite electrode. The main aim of the study was to detect the possible change of the cathode voltage fall (CVF) during the first instants of the arc. Indeed it is expected that during the first ms the graphite cathode is rather cool and the main mechanism of the electron emission should be the field effect emission, whereas after several tens of ms the cathode is strongly heated and thermionic emission should be predominant. We have observed some change in the apparent CVF but we have shown that this apparent change can be attributed to the variation of the solid cathode resistance. On the other hand, the possible change of CVF corresponding to the transition between a ‘cold’ and a ‘hot’ cathode should be weak and could not be characterized considering our measurement uncertainty of about 2 V. The arc column voltage (ACV) was estimated by subtracting the electrode voltage fall from the total arc voltage. The experimental transient evolution of the ACV is in very good agreement with the theoretical variation predicted by the model, showing the good ability of the model to study this kind of transient arc.

  16. Design and Implementation of a High-Voltage Generator with Output Voltage Control for Vehicle ER Shock-Absorber Applications

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2013-01-01

    Full Text Available A self-oscillating high-voltage generator is proposed to supply voltage for a suspension system in order to control the damping force of an electrorheological (ER fluid shock absorber. By controlling the output voltage level of the generator, the damping force in the ER fluid shock absorber can be adjusted immediately. The shock absorber is part of the suspension system. The high-voltage generator drives a power transistor based on self-excited oscillation, which converts dc to ac. A high-frequency transformer with high turns ratio is used to increase the voltage. In addition, the system uses the car battery as dc power supply. By regulating the duty cycle of the main switch in the buck converter, the output voltage of the buck converter can be linearly adjusted so as to obtain a specific high voltage for ER. The driving system is self-excited; that is, no additional external driving circuit is required. Thus, it reduces cost and simplifies system structure. A prototype version of the actual product is studied to measure and evaluate the key waveforms. The feasibility of the proposed system is verified based on experimental results.

  17. Manipulating the voltage dependence of tunneling spin torques

    KAUST Repository

    Manchon, Aurelien

    2012-10-01

    Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.

  18. Implementation strategy for soft switching PFC with low output voltage

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    This paper proposes a novel implementation strategy for soft switching PFC whose circuit is simple and can achieve low voltage output directly. The main circuit adopts current mode full-bridge converter and all the power switches can realize ZCS or ZVS in the way of phase-shifted control, using the leakage inductance of the transformer, the junction capacitor of the switches and the stored energy of the output capacitor. The problems such as the function of phase-shifted link in control circuit, the implementation conditions of soft switching and bias restrained are analyzed. The adoption of constant frequency PWM control makes the design of the input and output filter link and the high frequency transformer simple. The transformation ratio regulation so as to achieve low voltage output and electrical insulation can be realized by using high frequency transformer.

  19. Unbalanced Voltage Compensation in Low Voltage Residential AC Grids

    DEFF Research Database (Denmark)

    Trintis, Ionut; Douglass, Philip; Munk-Nielsen, Stig

    2016-01-01

    This paper describes the design and test of a control algorithm for active front-end rectifiers that draw power from a residential AC grid to feed heat pump loads. The control algorithm is able to control the phase to neutral or phase to phase RMS voltages at the point of common coupling....... The voltage control was evaluated with either active or reactive independent phase load current control. The control performance in field operation in a residential grid situated in Bornholm, Denmark was investigated for different use cases....

  20. Planar LTCC transformers for high voltage flyback converters: Part II.

    Energy Technology Data Exchange (ETDEWEB)

    Schofield, Daryl (NASCENTechnology, Inc., Watertown, SD); Schare, Joshua M., Ph.D.; Slama, George (NASCENTechnology, Inc., Watertown, SD); Abel, David (NASCENTechnology, Inc., Watertown, SD)

    2009-02-01

    This paper is a continuation of the work presented in SAND2007-2591 'Planar LTCC Transformers for High Voltage Flyback Converters'. The designs in that SAND report were all based on a ferrite tape/dielectric paste system originally developed by NASCENTechnoloy, Inc, who collaborated in the design and manufacturing of the planar LTCC flyback converters. The output/volume requirements were targeted to DoD application for hard target/mini fuzing at around 1500 V for reasonable primary peak currents. High voltages could be obtained but with considerable higher current. Work had begun on higher voltage systems and is where this report begins. Limits in material properties and processing capabilities show that the state-of-the-art has limited our practical output voltage from such a small part volume. In other words, the technology is currently limited within the allowable funding and interest.

  1. Voltage-gated Calcium Channels and Autism Spectrum Disorders.

    Science.gov (United States)

    Breitenkamp, Alexandra F; Matthes, Jan; Herzig, Stefan

    2015-01-01

    Autism spectrum disorder is a complex-genetic disease and its etiology is unknown for the majority of cases. So far, more than one hundred different susceptibility genes were detected. Voltage-gated calcium channels are among the candidates linked to autism spectrum disorder by results of genetic studies. Mutations of nearly all pore-forming and some auxiliary subunits of voltage gated calcium channels have been revealed from investigations of autism spectrum disorder patients and populations. Though there are only few electrophysiological characterizations of voltage-gated calcium channel mutations found in autistic patients these studies suggest their functional relevance. In summary, both genetic and functional data suggest a potential role of voltage-gated calcium channels in autism spectrum disorder. Future studies require refinement of the clinical and systems biological concepts of autism spectrum disorder and an appropriate holistic approach at the molecular level, e.g. regarding all facets of calcium channel functions.

  2. A technique to reduce plasma armature formation voltage

    Energy Technology Data Exchange (ETDEWEB)

    Jamison, K.A. (Science Applications International Corp., Shalimar, FL (US)); Littrell, D.M. (Air Force Armament Lab., Eglin AFB, FL (United States))

    1991-01-01

    The initiation of a plasma armature by foil vaporization in a railgun is often accompanied by a large, fast, voltage transient appearing on both the breech and muzzle of the gun. For a railgun driven by an inductor/opening switch power supply, this voltage transient becomes a concern during current commutation from the switch to the railgun. To lessen the requirements on the opening switch, techniques must be found to reduce the armature formation voltage. This paper presents the experimental results from railgun firings at AFATL's Electromagnetic Launcher Basic Research Facility (Site A-15, Eglin Air Force Base, Florida) using different shapes of initiation foils. These foils have been designed to vaporize into a plasma armature with reduced transient voltages. A design criteria was developed to ensure that all portions of the foil vaporize at slightly different times.

  3. Current-voltage-temperature characteristics of DNA origami

    Energy Technology Data Exchange (ETDEWEB)

    Bellido, Edson P; Bobadilla, Alfredo D; Rangel, Norma L; Seminario, Jorge M [Department of Chemical Engineering, Texas A and M University, College Station, TX 77843 (United States); Zhong Hong; Norton, Michael L [Department of Chemistry, Marshall University, Huntington, WV 25755 (United States); Sinitskii, Alexander [Department of Chemistry, Rice University, Houston, TX 77005 (United States)

    2009-04-29

    The temperature dependences of the current-voltage characteristics of a sample of triangular DNA origami deposited in a 100 nm gap between platinum electrodes are measured using a probe station. Below 240 K, the sample shows high impedance, similar to that of the substrate. Near room temperature the current shows exponential behavior with respect to the inverse of temperature. Sweep times of 1 s do not yield a steady state; however sweep times of 450 s for the bias voltage secure a steady state. The thermionic emission and hopping conduction models yield similar barriers of {approx}0.7 eV at low voltages. For high voltages, the hopping conduction mechanism yields a barrier of 0.9 eV and the thermionic emission yields 1.1 eV. The experimental data set suggests that the dominant conduction mechanism is hopping in the range 280-320 K. The results are consistent with theoretical and experimental estimates of the barrier for related molecules.

  4. VFT PHASE VOLTAGE MEASUREMENT IN THREE-PHASE ENCLOSED GIS

    Institute of Scientific and Technical Information of China (English)

    邹建华; 岳子丁; 李洋

    2002-01-01

    The measuring of VFT phase voltage in three-phase enclosed GIS is more complex and difficult than in single-phase ones. There are 3 capacitive sensors in the measuring system, the outputs of which are with a linear relation to the three phase voltages. This linear relation is presented with a factorial matrix. Because each capacitive sensor is coupled with the electric field of three phases (A, B, and C), the electric coupling coefficients are introduced. In order to determine the matrix of electric coupling coefficients, the numerical calculation method can be used. From the discussion on two types of three-phase enclosed GIS bus, i.e. standard arrangement and biased arrangement, the dominant electric coupling coefficients are named, which can be simply and approximately calculated by an analytic expression. Finally, as an example, the waveforms of VFT phase voltage generated on a three-phase enclosed GIS bus model are displayed. When a capacitive sensor is located at the 'shortest point' of phase A (or B, or C), the VFT phase voltage VA (or VB, or VC) can almost be measured by that capacitive sensor alone.

  5. Bias in clinical intervention research

    DEFF Research Database (Denmark)

    Gluud, Lise Lotte

    2006-01-01

    Research on bias in clinical trials may help identify some of the reasons why investigators sometimes reach the wrong conclusions about intervention effects. Several quality components for the assessment of bias control have been suggested, but although they seem intrinsically valid, empirical...

  6. Bias in the Mass Media.

    Science.gov (United States)

    Cirino, Robert

    Non-language elements of bias in mass media--such as images, sounds, tones of voices, inflection, and facial expressions--are invariably integrated with the choice of language. Further, they have an emotional impact that is often greater than that of language. It is essential that the teacher of English deal with this non-language bias since it is…

  7. Sequential biases in accumulating evidence

    Science.gov (United States)

    Huggins, Richard; Dogo, Samson Henry

    2015-01-01

    Whilst it is common in clinical trials to use the results of tests at one phase to decide whether to continue to the next phase and to subsequently design the next phase, we show that this can lead to biased results in evidence synthesis. Two new kinds of bias associated with accumulating evidence, termed ‘sequential decision bias’ and ‘sequential design bias’, are identified. Both kinds of bias are the result of making decisions on the usefulness of a new study, or its design, based on the previous studies. Sequential decision bias is determined by the correlation between the value of the current estimated effect and the probability of conducting an additional study. Sequential design bias arises from using the estimated value instead of the clinically relevant value of an effect in sample size calculations. We considered both the fixed‐effect and the random‐effects models of meta‐analysis and demonstrated analytically and by simulations that in both settings the problems due to sequential biases are apparent. According to our simulations, the sequential biases increase with increased heterogeneity. Minimisation of sequential biases arises as a new and important research area necessary for successful evidence‐based approaches to the development of science. © 2015 The Authors. Research Synthesis Methods Published by John Wiley & Sons Ltd. PMID:26626562

  8. Bias Analysis for Uncontrolled Confounding in the Health Sciences.

    Science.gov (United States)

    Arah, Onyebuchi A

    2017-03-20

    Uncontrolled confounding due to unmeasured confounders biases causal inference in health science studies using observational and imperfect experimental designs. The adoption of methods for analysis of bias due to uncontrolled confounding has been slow, despite the increasing availability of such methods. Bias analysis for such uncontrolled confounding is most useful in big data studies and systematic reviews to gauge the extent to which extraneous preexposure variables that affect the exposure and the outcome can explain some or all of the reported exposure-outcome associations. We review methods that can be applied during or after data analysis to adjust for uncontrolled confounding for different outcomes, confounders, and study settings. We discuss relevant bias formulas and how to obtain the required information for applying them. Finally, we develop a new intuitive generalized bias analysis framework for simulating and adjusting for the amount of uncontrolled confounding due to not measuring and adjusting for one or more confounders.

  9. Search Engine Bias and the Demise of Search Engine Utopianism

    Science.gov (United States)

    Goldman, E.

    Due to search engines' automated operations, people often assume that search engines display search results neutrally and without bias. However, this perception is mistaken. Like any other media company, search engines affirmatively control their users' experiences, which has the consequence of skewing search results (a phenomenon called "search engine bias"). Some commentators believe that search engine bias is a defect requiring legislative correction. Instead, this chapter argues that search engine bias is the beneficial consequence of search engines optimizing content for their users. The chapter further argues that the most problematic aspect of search engine bias, the "winner-take-all" effect caused by top placement in search results, will be mooted by emerging personalized search technology.

  10. Large-Scale Galaxy Bias

    CERN Document Server

    Desjacques, Vincent; Schmidt, Fabian

    2016-01-01

    This review presents a comprehensive overview of galaxy bias, that is, the statistical relation between the distribution of galaxies and matter. We focus on large scales where cosmic density fields are quasi-linear. On these scales, the clustering of galaxies can be described by a perturbative bias expansion, and the complicated physics of galaxy formation is absorbed by a finite set of coefficients of the expansion, called bias parameters. The review begins with a pedagogical proof of this very important result, which forms the basis of the rigorous perturbative description of galaxy clustering, under the assumptions of General Relativity and Gaussian, adiabatic initial conditions. Key components of the bias expansion are all leading local gravitational observables, which includes the matter density but also tidal fields and their time derivatives. We hence expand the definition of local bias to encompass all these contributions. This derivation is followed by a presentation of the peak-background split in i...

  11. Publication bias in epidemiological studies.

    Science.gov (United States)

    Siddiqi, Nazish

    2011-06-01

    Communication of research findings is the utmost responsibility of all scientists. Publication bias occurs if scientific studies with negative or null results fail to get published. This can happen due to bias in submitting, reviewing, accepting, publishing or aggregating scientific literature that fails to show positive results on a particular topic. Publication bias can make scientific literature unrepresentative of the actual research studies. This can give the reader a false impression about the beneficial effects of a particular treatment or intervention and can influence clinical decision making. Publication bias is more common than it is actually considered to be, but there are ways to detect and prevent it. This paper comments on the occurrence, types and consequences of publication bias and the strategies employed to detect and control it.

  12. Development of a New Cascade Voltage-Doubler for Voltage Multiplication

    OpenAIRE

    Arash Toudeshki; Norman Mariun; Hashim Hizam; Noor Izzri Abdul Wahab

    2014-01-01

    For more than eight decades, cascade voltage-doubler circuits are used as a method to produce DC output voltage higher than the input voltage. In this paper, the topological developments of cascade voltage-doublers are reviewed. A new circuit configuration for cascade voltage-doubler is presented. This circuit can produce a higher value of the DC output voltage and better output quality compared to the conventional cascade voltage-doubler circuits, with the same number of stages.

  13. Low-Energy Real-Time OS Using Voltage Scheduling Algorithm for Variable Voltage Processors

    OpenAIRE

    Okuma, Takanori; Yasuura, Hiroto

    2001-01-01

    This paper presents a real-time OS based on $ mu $ITRON using proposed voltage scheduling algorithm for variable voltage processors which can vary supply voltage dynamically. The proposed voltage scheduling algorithms assign voltage level for each task dynamically in order to minimize energy consumption under timing constraints. Using the presented real-time OS, running tasks with low supply voltage leads to drastic energy reduction. In addition, the presented voltage scheduling algorithm is ...

  14. Simple buck/boost voltage regulator

    Science.gov (United States)

    Paulkovich, J.; Rodriguez, G. E.

    1980-01-01

    Circuit corrects low or high supply voltage, produces regulated output voltage. Circuit has fewer components because inductory/transformer combination and pulse-width modulator serve double duty. Regulator handles input voltage variation from as low as one half output voltage to as high as input transistor rating. Solar arrays, fuel cells, and thermionic generators might use this regulator.

  15. 30 CFR 18.47 - Voltage limitation.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Voltage limitation. 18.47 Section 18.47 Mineral... § 18.47 Voltage limitation. (a) A tool or switch held in the operator's hand or supported against his... particular voltage(s) are provided in the design and construction of the equipment, its wiring,...

  16. A Versatile Control Scheme For Dynamic Voltage Restorer To Limit Downstream Fault Currents

    Directory of Open Access Journals (Sweden)

    A.Nagendra

    2014-12-01

    Full Text Available The Dynamic Voltage Restorer (DVR is a custom power device utilized to counteract voltage sags. It injects controlled three-phase ac voltages in series with the supply voltage, subsequent to voltage sag, to enhance voltage quality by adjusting the voltage magnitude, wave shape, and phase angle. The DVR is conventionally bypassed during a downstream fault to prevent potential adverse impacts on the fault and to protect the DVR components against the fault current. This paper proposes an augmented control strategy for the DVR that provides:1 voltage-sag compensation under balanced and unbalanced conditions and 2 a fault current interruption (FCI function. This paper introduces and evaluates an auxiliary control strategy for downstream fault current interruption in a radial distribution line by means of a dynamic voltage restorer (DVR. The proposed controller supplements the voltage-sag compensation control of the DVR. It does not require phaselocked loop and independently controls the magnitude and phase angle of the injected voltage for each phase. Fast least error squares digital filters are used to estimate the magnitude and phase of the measured voltages and effectively reduce the impacts of noise, harmonics, and disturbances on the estimated phasor parameters, and this enables effective fault current interrupting even under arcing fault conditions. The performance of the DVR for fault current interruption is analyzed by using MATLAB/SIMULINK software.

  17. Zero-bias spin separation

    Science.gov (United States)

    Ganichev, Sergey D.; Bel'Kov, Vasily V.; Tarasenko, Sergey A.; Danilov, Sergey N.; Giglberger, Stephan; Hoffmann, Christoph; Ivchenko, Eougenious L.; Weiss, Dieter; Wegscheider, Werner; Gerl, Christian; Schuh, Dieter; Stahl, Joachim; de Boeck, Jo; Borghs, Gustaaf; Prettl, Wilhelm

    2006-09-01

    The generation, manipulation and detection of spin-polarized electrons in low-dimensional semiconductors are at the heart of spintronics. Pure spin currents, that is, fluxes of magnetization without charge current, are quite attractive in this respect. A paradigmatic example is the spin Hall effect, where an electrical current drives a transverse spin current and causes a non-equilibrium spin accumulation observed near the sample boundary. Here we provide evidence for an another effect causing spin currents which is fundamentally different from the spin Hall effect. In contrast to the spin Hall effect, it does not require an electric current to flow: without bias the spin separation is achieved by spin-dependent scattering of electrons in media with suitable symmetry. We show, by free-carrier absorption of terahertz (THz) radiation, that spin currents flow in a wide range of temperatures. Moreover, the experimental results provide evidence that simple electron gas heating by any means is already sufficient to yield spin separation due to spin-dependent energy-relaxation processes.

  18. Cavity Voltage Phase Modulation MD

    CERN Document Server

    Mastoridis, Themistoklis; Molendijk, John; Timko, Helga; CERN. Geneva. ATS Department

    2016-01-01

    The LHC RF/LLRF system is currently configured for extremely stable RF voltage to minimize transient beam loading effects. The present scheme cannot be extended beyond nominal beam current since the demanded power would exceed the peak klystron power and lead to saturation. A new scheme has therefore been proposed: for beam currents above nominal (and possibly earlier), the cavity phase modulation by the beam will not be corrected (transient beam loading), but the strong RF feedback and One-Turn Delay feedback will still be active for loop and beam stability in physics. To achieve this, the voltage set point will be adapted for each bunch. The goal of this MD was to test a new algorithm that would adjust the voltage set point to achieve the cavity phase modulation that would minimize klystron forward power.

  19. Portable High Voltage Impulse Generator

    Directory of Open Access Journals (Sweden)

    S. Gómez

    2011-07-01

    Full Text Available This paper presents a portable high voltage impulse generator which was designed and built with insulation up to 20 kV. This design was based on previous work in which simulation software for standard waves was developed. Commercial components and low-cost components were used in this work; however, these particular elements are not generally used for high voltage applications. The impulse generators used in industry and laboratories are usually expensive; they are built to withstand extra high voltage and they are big, making them impossible to transport. The proposed generator is portable, thereby allowing tests to be made on devices that cannot be moved from their location. The results obtained with the proposed impulse generator were satisfactory in terms of time and waveforms compared to other commercial impulse generators and the standard impulse wave simulator.

  20. Implementation of Dynamic Voltage Restorer for Mitigation of Voltage Sag

    Directory of Open Access Journals (Sweden)

    K.Vinod Kumar

    2013-07-01

    Full Text Available Power quality is one of major concerns in the present. It has become important, especially with the introduction of sophisticated devices, whose performance is very sensitive to the quality of power supply. The dynamic voltage restorer (DVR is one of the modern devices used in distribution systems to improve the power quality. In this paper, emergency control in distribution systems is discussed by using the proposed multifunctional DVR control strategy.Also, themultiloop controller using the Posicast and P+Resonant controllers is proposed in order to improve the transient response and eliminate the steady state error in DVR response,respectively.The proposed process is applied to some riots in load voltage effected by induction motors starting, and a three-phase short circuit fault. The three-phase short circuits, and the large induction motors are suddenly started then voltage sags areoccurred.The innovation here is that by using the Multifunctional Dynamic Voltage Restorer, improve the power quality in distribution side. Simulation results show the capability of the DVR to control the emergency conditions of the distribution systems by using MATLAB/Simulink software.

  1. The high voltage homopolar generator

    Science.gov (United States)

    Price, J. H.; Gully, J. H.; Driga, M. D.

    1986-11-01

    System and component design features of proposed high voltage homopolar generator (HVHPG) are described. The system is to have an open circuit voltage of 500 V, a peak output current of 500 kA, 3.25 MJ of stored inertial energy and possess an average magnetic-flux density of 5 T. Stator assembly components are discussed, including the stator, mount structure, hydrostatic bearings, main and motoring brushgears and rotor. Planned operational procedures such as monitoring the rotor to full speed and operation with a superconducting field coil are delineated.

  2. Resilient architecture design for voltage variation

    CERN Document Server

    Reddi, Vijay Janapa

    2013-01-01

    Shrinking feature size and diminishing supply voltage are making circuits sensitive to supply voltage fluctuations within the microprocessor, caused by normal workload activity changes. If left unattended, voltage fluctuations can lead to timing violations or even transistor lifetime issues that degrade processor robustness. Mechanisms that learn to tolerate, avoid, and eliminate voltage fluctuations based on program and microarchitectural events can help steer the processor clear of danger, thus enabling tighter voltage margins that improve performance or lower power consumption. We describe

  3. "Virtual IED sensor" at an rf-biased electrode in low-pressure plasma

    Science.gov (United States)

    Bogdanova, M. A.; Lopaev, D. V.; Zyryanov, S. M.; Rakhimov, A. T.

    2016-07-01

    Energy distribution and the flux of the ions coming on a surface are considered as the key-parameters in anisotropic plasma etching. Since direct ion energy distribution (IED) measurements at the treated surface during plasma processing are often hardly possible, there is an opportunity for virtual ones. This work is devoted to the possibility of such indirect IED and ion flux measurements at an rf-biased electrode in low-pressure rf plasma by using a "virtual IED sensor" which represents "in-situ" IED calculations on the absolute scale in accordance with a plasma sheath model containing a set of measurable external parameters. The "virtual IED sensor" should also involve some external calibration procedure. Applicability and accuracy of the "virtual IED sensor" are validated for a dual-frequency reactive ion etching (RIE) inductively coupled plasma (ICP) reactor with a capacitively coupled rf-biased electrode. The validation is carried out for heavy (Ar) and light (H2) gases under different discharge conditions (different ICP powers, rf-bias frequencies, and voltages). An EQP mass-spectrometer and an rf-compensated Langmuir probe (LP) are used to characterize plasma, while an rf-compensated retarded field energy analyzer (RFEA) is applied to measure IED and ion flux at the rf-biased electrode. Besides, the pulsed selfbias method is used as an external calibration procedure for ion flux estimating at the rf-biased electrode. It is shown that pulsed selfbias method allows calibrating the IED absolute scale quite accurately. It is also shown that the "virtual IED sensor" based on the simplest collisionless sheath model allows reproducing well enough the experimental IEDs at the pressures when the sheath thickness s is less than the ion mean free path λi (s λi), the difference between calculated and experimental IEDs due to ion collisions in the sheath is observed in the low energy range. The effect of electron impact ionization in the sheath on the origin and

  4. Quantifying Heuristic Bias: Anchoring, Availability, and Representativeness.

    Science.gov (United States)

    Richie, Megan; Josephson, S Andrew

    2017-07-28

    Construct: Authors examined whether a new vignette-based instrument could isolate and quantify heuristic bias. Heuristics are cognitive shortcuts that may introduce bias and contribute to error. There is no standardized instrument available to quantify heuristic bias in clinical decision making, limiting future study of educational interventions designed to improve calibration of medical decisions. This study presents validity data to support a vignette-based instrument quantifying bias due to the anchoring, availability, and representativeness heuristics. Participants completed questionnaires requiring assignment of probabilities to potential outcomes of medical and nonmedical scenarios. The instrument randomly presented scenarios in one of two versions: Version A, encouraging heuristic bias, and Version B, worded neutrally. The primary outcome was the difference in probability judgments for Version A versus Version B scenario options. Of 167 participants recruited, 139 enrolled. Participants assigned significantly higher mean probability values to Version A scenario options (M = 9.56, SD = 3.75) than Version B (M = 8.98, SD = 3.76), t(1801) = 3.27, p = .001. This result remained significant analyzing medical scenarios alone (Version A, M = 9.41, SD = 3.92; Version B, M = 8.86, SD = 4.09), t(1204) = 2.36, p = .02. Analyzing medical scenarios by heuristic revealed a significant difference between Version A and B for availability (Version A, M = 6.52, SD = 3.32; Version B, M = 5.52, SD = 3.05), t(404) = 3.04, p = .003, and representativeness (Version A, M = 11.45, SD = 3.12; Version B, M = 10.67, SD = 3.71), t(396) = 2.28, p = .02, but not anchoring. Stratifying by training level, students maintained a significant difference between Version A and B medical scenarios (Version A, M = 9.83, SD = 3.75; Version B, M = 9.00, SD = 3.98), t(465) = 2.29, p = .02, but not residents or attendings. Stratifying by heuristic and training level, availability maintained

  5. Phase diagrams and switching of voltage and magnetic field in dilute magnetic semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Escobedo, R. [Departamento de Matematica Aplicada y Ciencias de la Computacion, Universidad de Cantabria, 39005 Santander (Spain); Carretero, M.; Bonilla, L.L. [G. Millan Institute, Fluid Dynamics, Nanoscience and Industrial Maths., Universidad Carlos III de Madrid, 28911 Leganes (Spain); Unidad Asociada al Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain); Platero, G. [Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain)

    2010-04-15

    The response of an n-doped dc voltage biased II-VI multi-quantum well dilute magnetic semiconductor nanostructure having its first well doped with magnetic (Mn) impurities is analyzed by sweeping wide ranges of both the voltage and the Zeeman level splitting induced by an external magnetic field. The level splitting versus voltage phase diagram shows regions of stable self-sustained current oscillations immersed in a region of stable stationary states. Transitions between stationary states and self-sustained current oscillations are systematically analyzed by both voltage and level splitting abrupt switching. Sudden voltage or/and magnetic field changes may switch on current oscillations from an initial stationary state, and reciprocally, current oscillations may disappear after sudden changes of voltage or/and magnetic field changes into the stable stationary states region. The results show how to design such a device to operate as a spin injector and a spin oscillator by tuning the Zeeman splitting (through the applied external magnetic field), the applied voltage and the sample configuration parameters (doping density, barrier and well widths, etc.) to select the desired stationary or oscillatory behavior. Phase diagram of Zeeman level splitting {delta} vs. dimensionless applied voltage {phi} for N = 10 QWs. White region: stable stationary states; black: stable self-sustained current oscillations. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Design and control of single-phase dynamic voltage restorer

    Indian Academy of Sciences (India)

    AMIT MEENA; SHIRAZUL ISLAM; SANDEEP ANAND; YOGESH SONAWANE; SANJAY TUNGARE

    2017-08-01

    Dynamic voltage restorer (DVR) is a custom power device used in electrical distribution system for power quality improvement. It ensures regulated voltage supply to the sensitive loads, even in case of voltage sag and swell disturbances in the distribution network. It is a series connected device and compensates voltagesag and swell by injecting a voltage with the help of a series transformer. The injection of an appropriate voltage component in the event of a voltage disturbance requires a certain amount of real and reactive power. Conventionally,DVR consists of an energy storage device, which supplies the required power over the limited duration of the sags. Large magnitude and long duration of sags lead to heavy financial investment in energy storage unit. To overcome this limitation, a single-phase back-to-back converter-based DVR is implemented inthis work, which eliminates energy storage requirement. The integration of series and shunt converter makes the DVR capable of bidirectional flow of energy. Therefore, the key advantage of this topology is its capability to compensate for long-term voltage sag and swell. Modelling of the DVR and its controller design is included in this paper. The effectiveness of control schemes, protection schemes and starting sequence of operation of DVR is verified through detailed simulation studies. A scaled down laboratory prototype of DVR is developed. The viability of these schemes is confirmed by the experimental results generated from the laboratory prototype. Various challenges faced during the prototype development and corresponding solutions are also discussed in this paper.

  7. Administrative bias in South Africa

    Directory of Open Access Journals (Sweden)

    E S Nwauche

    2005-01-01

    Full Text Available This article reviews the interpretation of section 6(2(aii of the Promotion of Administrative Justice Act which makes an administrator “biased or reasonably suspected of bias” a ground of judicial review. In this regard, the paper reviews the determination of administrative bias in South Africa especially highlighting the concept of institutional bias. The paper notes that inspite of the formulation of the bias ground of review the test for administrative bias is the reasonable apprehension test laid down in the case of President of South Africa v South African Rugby Football Union(2 which on close examination is not the same thing. Accordingly the paper urges an alternative interpretation that is based on the reasonable suspicion test enunciated in BTR Industries South Africa (Pty Ltd v Metal and Allied Workers Union and R v Roberts. Within this context, the paper constructs a model for interpreting the bias ground of review that combines the reasonable suspicion test as interpreted in BTR Industries and R v Roberts, the possibility of the waiver of administrative bias, the curative mechanism of administrative appeal as well as some level of judicial review exemplified by the jurisprudence of article 6(1 of the European Convention of Human Rights, especially in the light of the contemplation of the South African Magistrate Court as a jurisdictional route of judicial review.

  8. Cognitive Bias in Systems Verification

    Science.gov (United States)

    Larson, Steve

    2012-01-01

    Working definition of cognitive bias: Patterns by which information is sought and interpreted that can lead to systematic errors in decisions. Cognitive bias is used in diverse fields: Economics, Politics, Intelligence, Marketing, to name a few. Attempts to ground cognitive science in physical characteristics of the cognitive apparatus exceed our knowledge. Studies based on correlations; strict cause and effect is difficult to pinpoint. Effects cited in the paper and discussed here have been replicated many times over, and appear sound. Many biases have been described, but it is still unclear whether they are all distinct. There may only be a handful of fundamental biases, which manifest in various ways. Bias can effect system verification in many ways . Overconfidence -> Questionable decisions to deploy. Availability -> Inability to conceive critical tests. Representativeness -> Overinterpretation of results. Positive Test Strategies -> Confirmation bias. Debiasing at individual level very difficult. The potential effect of bias on the verification process can be managed, but not eliminated. Worth considering at key points in the process.

  9. Cognitive Bias in Systems Verification

    Science.gov (United States)

    Larson, Steve

    2012-01-01

    Working definition of cognitive bias: Patterns by which information is sought and interpreted that can lead to systematic errors in decisions. Cognitive bias is used in diverse fields: Economics, Politics, Intelligence, Marketing, to name a few. Attempts to ground cognitive science in physical characteristics of the cognitive apparatus exceed our knowledge. Studies based on correlations; strict cause and effect is difficult to pinpoint. Effects cited in the paper and discussed here have been replicated many times over, and appear sound. Many biases have been described, but it is still unclear whether they are all distinct. There may only be a handful of fundamental biases, which manifest in various ways. Bias can effect system verification in many ways . Overconfidence -> Questionable decisions to deploy. Availability -> Inability to conceive critical tests. Representativeness -> Overinterpretation of results. Positive Test Strategies -> Confirmation bias. Debiasing at individual level very difficult. The potential effect of bias on the verification process can be managed, but not eliminated. Worth considering at key points in the process.

  10. Kondo-like zero-bias conductance anomaly in a three-dimensional topological insulator nanowire

    Science.gov (United States)

    Cho, Sungjae; Zhong, Ruidan; Schneeloch, John A.; Gu, Genda; Mason, Nadya

    2016-02-01

    Zero-bias anomalies in topological nanowires have recently captured significant attention, as they are possible signatures of Majorana modes. Yet there are many other possible origins of zero-bias peaks in nanowires—for example, weak localization, Andreev bound states, or the Kondo effect. Here, we discuss observations of differential-conductance peaks at zero-bias voltage in non-superconducting electronic transport through a 3D topological insulator (Bi1.33Sb0.67)Se3 nanowire. The zero-bias conductance peaks show logarithmic temperature dependence and often linear splitting with magnetic fields, both of which are signatures of the Kondo effect in quantum dots. We characterize the zero-bias peaks and discuss their origin.

  11. Theoretical analysis of a biased photonic crystal fiber infiltrated with a negative dielectric anisotropy liquid crystal

    DEFF Research Database (Denmark)

    Weirich, Johannes; Wei, Lei; Lægsgaard, Jesper;

    2009-01-01

    We simulate the PBG mode of a biased Photonic Crystal Fiber (PCF) infiltrated with a Liquid Crystal (LC) with negative dielectric anisotropy. We analyse the voltage induced change of the transmission spectrum, dispersion and losses and compare them to the experimental values....

  12. Simplification of the Plasma Load of Negative-Pulse-Bias Source Used in Arc Ion Plating

    Institute of Scientific and Technical Information of China (English)

    Dong QI; Ninghui WANG; Guoqiang LIN; Zhenfeng DING

    2003-01-01

    Based on the voltage and current fluctuating phenomenon in the arc plasma load under the negative-pulse-bias, usingthe plasma physics theory and analysis of computer simulation expatiates that the nature of plasma load in vacuumarc plasma is a capacitance

  13. Application of Photocurrent Model on Polymer Solar Cells Under Forward Bias Stress

    DEFF Research Database (Denmark)

    Rizzo, Antonio; Torto, Lorenzo; Wrachien, Nicola

    2017-01-01

    We performed a constant current stress at forward bias on organic heterojunction solar cells. We measured current voltage curves in both dark and light at each stress step to calculate the photocurrent. An existing model applied to photocurrent experimental data allows the estimation of several...

  14. 脉冲偏压电弧离子镀Cr-O薄膜结构及光学性能研究∗%Structure and optical prop erty of Cr-O films dep osited by pulsed bias arc ion plating

    Institute of Scientific and Technical Information of China (English)

    刘海永; 张敏; 林国强; 韩克昌; 张林

    2015-01-01

    A series of uniform and transparent Cr-O films were synthesized on the silicon and quartz glass substrates at different bias voltages by pulsed bias arc ion plating. Effects of bias voltage on surface morphology, phase structure, composition, chemical valence states, hardness and optical property of the films were investigated by field emission scanning electron microscopy, grazing incident X-ray diffraction, X-ray photoelectron spectroscopy, nanoindentation and ultraviolet-visible spectrophotometer, respectively. Results indicate that the bias voltage can improve the quality of the films significantly and plays an important role in the film properties. Macroparticles and holes are observed on the surface of the films if without application of bias voltage, while the films prepared with bias voltage are uniform and smooth. The crystalline phase of the film is of amorphous structure if without bias voltage. While the bias voltage applies and increases from−100 V to−500 V, the Cr2O3 phase appears and changes into CrO phase. The crystal plane (104), (116) of the Cr2O3 phase and (200) of the Cr phase are observed in the film at the bias voltage of−100 V. When the bias voltage is above−200 V, the crystal planes (311) and (400) of the CrO phase can be observed. In order to further obtain the structure information, a detailed XPS study is performed. Chromium in the films shows different valence states, namely metallic Cr, Cr2+, Cr3+and Cr6+. Thereby, the main components of the polycrystalline films are Cr2O3 and CrO phases, meanwhile, and the films also contain a small amount of CrO3 and metal Cr phases. The films under different bias voltage show good mechanical properties and the hardness of all the films is above 19 GPa. With the increase of bias voltage the hardness first increases and then decreases, reaching a maximum value of 24.4 GPa at the bias voltage of−300 V. The films show good optical transmittance and its highest value can be up to 72%. As the

  15. Cooperative Control with Virtual Selective Harmonic Capacitance for Harmonic Voltage Compensation in Islanded MicroGrids

    DEFF Research Database (Denmark)

    Micallef, A.; Apap, M.; Spitero-Stanies, C.

    2012-01-01

    This paper focuses on the islanded operation of microgrids. In this mode of operation, the microsources are required to cooperate autonomously to regulate the local grid voltage and frequency. Droop control is typically used to achieve this autonomous voltage and frequency regulation. Inverters...... having LCL output filters would cause voltage distortion to be present at the PCC of the local load when non-linear current is supplied to the load due to the voltage drop across the grid side inductor. Techniques to reduce the output voltage distortion typically consist of installing either passive...... loop, implemented in each of the microsource inverters, is proposed so as to dampen the voltage harmonics at the PCC of the local load. Simulation results are presented showing the suitability of the proposed algorithm in dampening the PCC voltage harmonics....

  16. Analysis of the giant magnetostrictive actuator with strong bias magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Xue, Guangming, E-mail: yy0youxia@163.com; He, Zhongbo; Li, Dongwei; Yang, Zhaoshu; Zhao, Zhenglong

    2015-11-15

    Giant magnetostrictive actuator with strong bias magnetic field is designed to control the injector bullet valve opening and closing. The relationship between actuator displacement amplitude and input signal direction is analyzed. And based on the approximate linearity of strain-magnetic field, second-order system model of the actuator displacement is established. Experimental system suitable for the actuator is designed. The experimental results show that, the square voltage amplitude being 12 V, the actuator displacement amplitude is about 17 μm with backward direction signal input while being 1.5 μm under forward direction signal. From the results, the suitable input direction is confirmed to be backward. With exciting frequncy lower than 200 Hz, the error between the model and experimental result is less than 1.7 μm. So the model is validated under the low-frequency signal input. The testing displacement-voltage curves are approximately straight lines. But due to the biased position, the line slope and the displacement-voltage linearity change as the input voltage changes. - Highlights: • Giant magnetostrictive actuator with strong bias magnetic field is designed. • The relationship between actuator displacement amplitude and input current direction is analyzed. • The model of the actuator displacement is established and its accuracy is verified by the test. • The actuator displacement-voltage curves are achieved by the test, and the curves’ characteristics are analyzed theoretically.

  17. Biases from neutrino bias: to worry or not to worry?

    OpenAIRE

    Raccanelli, Alvise; Verde, Licia; Villaescusa-Navarro, Francisco

    2017-01-01

    The relation between the halo field and the matter fluctuations (halo bias), in the presence of massive neutrinos depends on the total neutrino mass, massive neutrinos introduce an additional scale-dependence of the bias which is usually neglected in cosmological analyses. We investigate the magnitude of the systematic effect on interesting cosmological parameters induced by neglecting this scale dependence, finding that while it is not a problem for current surveys, it is non-negligible for ...

  18. On the dynamical origin of bias in clusters of galaxies

    CERN Document Server

    Colafrancesco, Sergio; Del Popolo, A; Colafrancesco, S; Del Popolo, A

    1994-01-01

    We study the effect of the dynamical friction induced by the presence of substructure on the statistics of the collapse of density peaks. Applying the results of a former paper we show that within high density environments, like rich clusters of galaxies, the collapse of smaller peaks is strongly delayed until very late epochs. A bias of dynamical nature thus naturally arises because high density peaks preferentially collapse For a standard CDM model we find that this dynamical bias can account for a substantial part of the total bias required by observations on cluster scales.

  19. On precision and accuracy (bias) statements for measurement procedures

    Energy Technology Data Exchange (ETDEWEB)

    Bruckner, L.A.; Hume, M.W.; Delvin, W.L.

    1988-01-01

    Measurement procedures are often required to contain precision and accuracy of precision and bias statements. This paper contains a glossary that explains various terms that often appear in these statements as well as an example illustrating such statements for a specific set of data. Precision and bias statements are shown to vary according to the conditions under which the data were collected. This paper emphasizes that the error model (an algebraic expression that describes how the various sources of variation affect the measurement) is an important consideration in the formation of precision and bias statements.

  20. VOLTAGE REGULATORS OF SYNCHRONOUS GENERATORS

    Directory of Open Access Journals (Sweden)

    Grigorash O. V.

    2015-06-01

    Full Text Available Synchronous generators are the primary source of electrical power autonomous electrosupply systems, including backup systems. They are also used in a structure of rotating electricity converters and are widely used in renewable energy as part of wind power plants of small, mini and micro hydroelectric plants. Increasing the speed and the accuracy of the system of the voltage regulation of synchronous generators is possible due to the development of combined systems containing more stabilizers. The article illustrates the functional schemes of circuit voltage stabilizers and frequency synchronous generators (with electromagnetic excitation and permanent magnet excitation and describes the features of their work, including two and three-aggregate rotating converters of electricity used in uninterruptible power supply systems. To improve the technical characteristics of the system of stabilization we have proposed functional solutions for stabilizers of synchronous generators made on the base of direct frequency converters and using a transformer with a rotating magnetic field. To improve the reliability of and to improve the operational characteristics of the autonomous independent sources of electricity we suggest creating the main functional blocks and the elements of the stabilization system in a modular way. The functional circuit solutions of voltage regulators of synchronous generators and the characteristics of their work considered in the article, are able to improve the efficiency of pre-design work in the development of new technical solutions for stabilizing the voltage and the frequency in synchronous generators of electrosupply autonomous systems

  1. Frequency-controlled voltage regulator

    Science.gov (United States)

    Mclyman, W. T.

    1980-01-01

    Converting input ac to higher frequency reduce size and weight and makes possible unique kind of regulation. Since conversion frequency is above range of human hearing, supply generated on audible noise. It also exploits highfrequency conversion features to regulate its output voltage in novel way. Circuit is inherently short-circuit proof.

  2. Grid Voltage Synchronization for Distributed Generation Systems under Grid Fault Conditions

    DEFF Research Database (Denmark)

    Luna, Alvaro; Rocabert, J.; Candela, I.

    2015-01-01

    The actual grid code requirements for the grid connection of distributed generation systems, mainly wind and PV systems, are becoming very demanding. The Transmission System Operators (TSOs) are especially concerned about the Low Voltage Ride Through requirements. Solutions based on the installat......The actual grid code requirements for the grid connection of distributed generation systems, mainly wind and PV systems, are becoming very demanding. The Transmission System Operators (TSOs) are especially concerned about the Low Voltage Ride Through requirements. Solutions based...

  3. Cooperative control of VSC-HVDC connected offshore wind farm with Low-Voltage Ride-Through capability

    DEFF Research Database (Denmark)

    Liu, Yan; Wang, Xiongfei; Chen, Zhe

    2012-01-01

    The Low-Voltage Ride-Through (LVRT) has become an important grid requirement for offshore wind farms connecting with Voltage Source Converter based High Voltage Direct Current (VSC-HVDC) links. In this paper, a cooperative control strategy with LVRT ability is proposed for a VSC-HVDC connected va...

  4. Optimization of power systems with voltage security constraints

    Science.gov (United States)

    Rosehart, William Daniel

    As open access market principles are applied to power systems, significant changes in their operation and control are occurring. In the new marketplace, power systems are operating under higher loading conditions as market influences demand greater attention to operating cost versus stability margins. Since stability continues to be a basic requirement in the operation of any power system, new tools are being considered to analyze the effect of stability on the operating cost of the system, so that system stability can be incorporated into the costs of operating the system. In this thesis, new optimal power flow (OPF) formulations are proposed based on multi-objective methodologies to optimize active and reactive power dispatch while maximizing voltage security in power systems. The effects of minimizing operating costs, minimizing reactive power generation and/or maximizing voltage stability margins are analyzed. Results obtained using the proposed Voltage Stability Constrained OPF formulations are compared and analyzed to suggest possible ways of costing voltage security in power systems. When considering voltage stability margins the importance of system modeling becomes critical, since it has been demonstrated, based on bifurcation analysis, that modeling can have a significant effect of the behavior of power systems, especially at high loading levels. Therefore, this thesis also examines the effects of detailed generator models and several exponential load models. Furthermore, because of its influence on voltage stability, a Static Var Compensator model is also incorporated into the optimization problems.

  5. Voltage-gated Proton Channels

    Science.gov (United States)

    DeCoursey, Thomas E.

    2014-01-01

    Voltage-gated proton channels, HV1, have vaulted from the realm of the esoteric into the forefront of a central question facing ion channel biophysicists, namely the mechanism by which voltage-dependent gating occurs. This transformation is the result of several factors. Identification of the gene in 2006 revealed that proton channels are homologues of the voltage-sensing domain of most other voltage-gated ion channels. Unique, or at least eccentric, properties of proton channels include dimeric architecture with dual conduction pathways, perfect proton selectivity, a single-channel conductance ~103 smaller than most ion channels, voltage-dependent gating that is strongly modulated by the pH gradient, ΔpH, and potent inhibition by Zn2+ (in many species) but an absence of other potent inhibitors. The recent identification of HV1 in three unicellular marine plankton species has dramatically expanded the phylogenetic family tree. Interest in proton channels in their own right has increased as important physiological roles have been identified in many cells. Proton channels trigger the bioluminescent flash of dinoflagellates, facilitate calcification by coccolithophores, regulate pH-dependent processes in eggs and sperm during fertilization, secrete acid to control the pH of airway fluids, facilitate histamine secretion by basophils, and play a signaling role in facilitating B-cell receptor mediated responses in B lymphocytes. The most elaborate and best-established functions occur in phagocytes, where proton channels optimize the activity of NADPH oxidase, an important producer of reactive oxygen species. Proton efflux mediated by HV1 balances the charge translocated across the membrane by electrons through NADPH oxidase, minimizes changes in cytoplasmic and phagosomal pH, limits osmotic swelling of the phagosome, and provides substrate H+ for the production of H2O2 and HOCl, reactive oxygen species crucial to killing pathogens. PMID:23798303

  6. The construction of an electrode biasing system for driving plasma rotation in J-TEXT tokamak

    Science.gov (United States)

    Zhu, T. Z.; Chen, Z. P.; Sun, Yue; Nan, J. Y.; Liu, H.; Zhuang, G.; Wang, Z. J.

    2014-05-01

    A newly designed electrode biasing system has been constructed for driving plasma rotation in J-TEXT tokamak. To reduce the influence to the plasma, the system contains a pneumatic driving system so that it can reciprocate in a single discharge, with a stroke of about 5 cm in 100 ms. The power supply of the system can provide stable and adjustable dc voltage in the range of 0-700 V, with adjustable duration of 10-200 ms; its instantaneous power output can reach up to more than 200 kW. In addition, the power supply can also provide a multi-cycle voltage waveform, with adjustable pulse width and voltage amplitude. When applying a positive bias to the plasma, both an improvement of plasma confinement and the speed-up of plasma-edge toroidal rotation in the same direction of plasma current are observed in the experiments.

  7. Power conditioning for low-voltage piezoelectric stack energy harvesters

    Science.gov (United States)

    Skow, E.; Leadenham, S.; Cunefare, K. A.; Erturk, A.

    2016-04-01

    Low-power vibration and acoustic energy harvesting scenarios typically require a storage component to be charged to enable wireless sensor networks, which necessitates power conditioning of the AC output. Piezoelectric beam-type bending mode energy harvesters or other devices that operate using a piezoelectric element at resonance produce high voltage levels, for which AC-DC converters and step-down DC-DC converters have been previously investigated. However, for piezoelectric stack energy harvesters operating off-resonance and producing low voltage outputs, a step-up circuit is required for power conditioning, such as seen in electromagnetic vibration energy scavengers, RF communications, and MEMS harvesters. This paper theoretically and experimentally investigates power conditioning of a low-voltage piezoelectric stack energy harvester.

  8. GEM voltage supply and real-time monitoring

    CERN Document Server

    Karaventzas, Vasilios Dimitris

    2015-01-01

    The operation of a GEM requires strong electrical fields that are able to initiate an electron avalanche. These electrical fields are generated by the application of high voltage in µm gaps. The scope of this project was to monitor the electrical parameters of the applied voltages, such as level and current flowing towards the detector. Therefore a real-time monitoring scheme was implemented. Additionally, a scheme for having all the voltages required for the operation of a GEM controllable, is proposed. The work conducted during this time-frame was targeted into developing the necessary parts for the operation of such device, whereas the integration of those into one functional circuit is to be conducted in a future work.

  9. High Voltage Power Transmission for Wind Energy

    Science.gov (United States)

    Kim, Young il

    The high wind speeds and wide available area at sea have recently increased the interests on offshore wind farms in the U.S.A. As offshore wind farms become larger and are placed further from the shore, the power transmission to the onshore grid becomes a key feature. Power transmission of the offshore wind farm, in which good wind conditions and a larger installation area than an onshore site are available, requires the use of submarine cable systems. Therefore, an underground power cable system requires unique design and installation challenges not found in the overhead power cable environment. This paper presents analysis about the benefit and drawbacks of three different transmission solutions: HVAC, LCC/VSC HVDC in the grid connecting offshore wind farms and also analyzed the electrical characteristics of underground cables. In particular, loss of HV (High Voltage) subsea power of the transmission cables was evaluated by the Brakelmann's theory, taking into account the distributions of current and temperature.

  10. High-Voltage, Asymmetric-Waveform Generator

    Science.gov (United States)

    Beegle, Luther W.; Duong, Tuan A.; Duong, Vu A.; Kanik, Isik

    2008-01-01

    The shapes of waveforms generated by commercially available analytical separation devices, such as some types of mass spectrometers and differential mobility spectrometers are, in general, inadequate and result in resolution degradation in output spectra. A waveform generator was designed that would be able to circumvent these shortcomings. It is capable of generating an asymmetric waveform, having a peak amplitude as large as 2 kV and frequency of several megahertz, which can be applied to a capacitive load. In the original intended application, the capacitive load would consist of the drift plates in a differential-mobility spectrometer. The main advantage to be gained by developing the proposed generator is that the shape of the waveform is made nearly optimum for various analytical devices requiring asymmetric-waveform such as differential-mobility spectrometers. In addition, this waveform generator could easily be adjusted to modify the waveform in accordance with changed operational requirements for differential-mobility spectrometers. The capacitive nature of the load is an important consideration in the design of the proposed waveform generator. For example, the design provision for shaping the output waveform is based partly on the principle that (1) the potential (V) on a capacitor is given by V=q/C, where C is the capacitance and q is the charge stored in the capacitor; and, hence (2) the rate of increase or decrease of the potential is similarly proportional to the charging or discharging current. The proposed waveform generator would comprise four functional blocks: a sine-wave generator, a buffer, a voltage shifter, and a high-voltage switch (see Figure 1). The sine-wave generator would include a pair of operational amplifiers in a feedback configuration, the parameters of which would be chosen to obtain a sinusoidal timing signal of the desired frequency. The buffer would introduce a slight delay (approximately equal to 20 ns) but would otherwise

  11. MLE's bias pathology motivates MCMLE

    OpenAIRE

    Yatracos, Yannis G.

    2013-01-01

    Maximum likelihood estimates are often biased. It is shown that this pathology is inherent to the traditional ML estimation method for two or more parameters, thus motivating from a different angle the use of MCMLE.

  12. Cognitive biases and language universals

    CERN Document Server

    Baronchelli, Andrea; Puglisi, Andrea

    2013-01-01

    Language universals have been longly attributed to an innate Universal Grammar. An alternative explanation states that linguistic universals emerged independently in every language in response to shared cognitive, though non language-specific, biases. A computational model has recently shown how this could be the case, focusing on the paradigmatic example of the universal properties of color naming patterns, and producing results in accurate agreement with the experimental data. Here we investigate thoroughly the role of a cognitive bias in the framework of this model. We study how, and to what extent, the structure of the bias can influence the corresponding linguistic universal patterns. We show also that the cultural history of a group of speakers introduces population-specific constraints that act against the uniforming pressure of the cognitive bias, and we clarify the interplay between these two forces. We believe that our simulations can help to shed light on the possible mechanisms at work in the evol...

  13. Minimum Bias Trigger in ATLAS

    CERN Document Server

    Kwee, R E; The ATLAS collaboration

    2010-01-01

    Since the restart of the LHC in November 2009, ATLAS has collected inelastic pp-collisions to perform first measurements on charged particle densities. These measurements will help to constrain various models describing phenomenologically soft parton interactions. Understanding the trigger efficiencies for different event types are therefore crucial to minimize any possible bias in the event selection. ATLAS uses two main minimum bias triggers, featuring complementary detector components and trigger levels. While a hardware based first trigger level situated in the forward regions with 2.09 < |eta| < 3.8 has been proven to select pp-collisions very efficiently, the Inner Detector based minimum bias trigger uses a random seed on filled bunches and central tracking detectors for the event selection. Both triggers were essential for the analysis of kinematic spectra of charged particles. Their performance and trigger efficiency measurements as well as studies on possible bias sources will be presen...

  14. Series-connected substrate-integrated lead-carbon hybrid ultracapacitors with voltage-management circuit

    Indian Academy of Sciences (India)

    A Banerjee; R Srinivasan; A K Shukla

    2015-02-01

    Cell voltage for a fully charged-substrate-integrated lead-carbon hybrid ultracapacitor is about 2.3 V. Therefore, for applications requiring higher DC voltage, several of these ultracapacitors need to be connected in series. However, voltage distribution across each series-connected ultracapacitor tends to be uneven due to tolerance in capacitance and parasitic parallel-resistance values. Accordingly, voltage-management circuit is required to protect constituent ultracapacitors from exceeding their rated voltage. In this study, the design and characterization of the substrate-integrated lead-carbon hybrid ultracapacitor with co-located terminals is discussed. Voltage-management circuit for the ultracapacitor is presented, and its effectiveness is validated experimentally.

  15. Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

    Directory of Open Access Journals (Sweden)

    P. Pipinys

    2010-01-01

    Full Text Available Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K using for calculation the effective mass of 0.222 me. and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy are also explicable in the framework of the PhAT model.

  16. DC-bias Cancellation for Phase Shift Controlled Dual Active Bridge

    DEFF Research Database (Denmark)

    Alzola, Rafael Pena; Mathe, Laszlo; Liserre, Marco;

    2013-01-01

    The dual active bridge topology allows bidirectional power flow and galvanic isolation for DC/DC energy conversion. These features have made it the possible backbone of the future smart transformer for distribution. The different voltage drops and commutation dead-times of the semiconductor...... switches result in DC-voltage at the transformer terminals. Even small DCvoltage components produce large DC-bias currents as they are only limited by the transformer resistances. The DC-bias degrades the transformer performance by increasing the losses. If the core saturates the resulting current pulses...... can damage the converter. A typical approach to avoid the DC-bias is placing a capacitor in series with the transformer. This capacitor suffers large current variations, reducing its reliability, and complicates the control. The dual active bridge usually handles the power flow by modifying the phase...

  17. Effect of a Biased Probe on the Afterglow Operation of an ECR4 Ion Source

    CERN Document Server

    Hill, C E; Wenander, F; Wolf, B H

    2000-01-01

    Various experiments have been performed on a 14.5 GHz ECR4 in order to improve the ion yield. The source runs in pulsed afterglow mode, and provides currents ~120 emA of Pb27+ to the CERN Heavy Ion Facility on an operational basis. In the search for higher beam intensities, the effects of a pulsed biased disk on axis at the injection side were investigated with different pulse timing and voltage settings. No proof for absolute higher intensities was seen for any of these modifications. However, the yield from a poorly tuned/low-performing source could be improved and the extracted pulse was less noisy with bias voltage applied. The fast response on the bias implies that increases/decreases are not due to ionisation processes. A good tune for high yield of high charge states during the afterglow coincides with a high plasma potential.

  18. Preferences, country bias, and international trade

    NARCIS (Netherlands)

    S. Roy (Santanu); J.M.A. Viaene (Jean-Marie)

    1998-01-01

    textabstractAnalyzes international trade where consumer preferences exhibit country bias. Why country biases arise; How trade can occur in the presence of country bias; Implication for the pattern of trade and specialization.

  19. Preferences, country bias, and international trade

    NARCIS (Netherlands)

    S. Roy (Santanu); J.M.A. Viaene (Jean-Marie)

    1998-01-01

    textabstractAnalyzes international trade where consumer preferences exhibit country bias. Why country biases arise; How trade can occur in the presence of country bias; Implication for the pattern of trade and specialization.

  20. The Coefficient of the Voltage Induced Frequency Shift Measurement on a Quartz Tuning Fork

    Directory of Open Access Journals (Sweden)

    Yubin Hou

    2014-11-01

    Full Text Available We have measured the coefficient of the voltage induced frequency shift (VIFS of a 32.768 KHz quartz tuning fork. Three vibration modes were studied: one prong oscillating, two prongs oscillating in the same direction, and two prongs oscillating in opposite directions. They all showed a parabolic dependence of the eigen-frequency shift on the bias voltage applied across the fork, due to the voltage-induced internal stress, which varies as the fork oscillates. The average coefficient of the VIFS effect is as low as several hundred nano-Hz per millivolt, implying that fast-response voltage-controlled oscillators and phase-locked loops with nano-Hz resolution can be built.

  1. Spin-torque diode radio-frequency detector with voltage tuned resonance

    Energy Technology Data Exchange (ETDEWEB)

    Skowroński, Witold, E-mail: skowron@agh.edu.pl; Frankowski, Marek; Stobiecki, Tomasz [AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków (Poland); Wrona, Jerzy [AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków (Poland); Singulus Technologies, Kahl am Main 63796 (Germany); Ogrodnik, Piotr [Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw (Poland); AGH University of Science and Technology, Department of Electronics, Al. Mickiewicza 30, 30-059 Kraków (Poland); Barnaś, Józef [Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań (Poland); Institute of Molecular Physics, Polish Academy of Sciences, Smoluchowskiego 17, 60-179 Poznań (Poland)

    2014-08-18

    We report on a voltage-tunable radio-frequency (RF) detector based on a magnetic tunnel junction (MTJ). The spin-torque diode effect is used to excite and/or detect RF oscillations in the magnetic free layer of the MTJ. In order to reduce the overall in-plane magnetic anisotropy of the free layer, we take advantage of the perpendicular magnetic anisotropy at the interface between ferromagnetic and insulating layers. The applied bias voltage is shown to have a significant influence on the magnetic anisotropy, and thus on the resonance frequency of the device. This influence also depends on the voltage polarity. The obtained results are accounted for in terms of the interplay of spin-transfer-torque and voltage-controlled magnetic anisotropy effects.

  2. Effects of dielectric charging on the output voltage of a capacitive accelerometer

    Science.gov (United States)

    Qu, Hao; Yu, Huijun; Zhou, Wu; Peng, Bei; Peng, Peng; He, Xiaoping

    2016-11-01

    Output voltage drifting observed in one typical capacitive microelectromechanical system (MEMS) accelerometer is discussed in this paper. Dielectric charging effect is located as one of the major determinants of this phenomenon through a combination of experimental and theoretical studies. A theoretical model for the electromechanical effects of the dielectric surface charges within the electrode gap is established to analyze the dielectric charge effect on the output voltage. Observations of output voltage drift against time are fitted to this model in order to estimate the possible dielectric layer thickness. Meanwhile, Auger electron spectroscopy is carried out to analyze the electrode surface material composition and confirms a mixture layer of dielectric SiO2 and Si with a thickness about 5 nm, which is very close to the model estimation. In addition, observation of time-varing output drift in the variable bias voltage experiment indicates the movement of dielectric charge can be controlled by the applied electric field.

  3. Low-bias negative differential conductance controlled by electrode separation

    Science.gov (United States)

    Yi, Xiao-Hua; Liu, Ran; Bi, Jun-Jie; Jiao, Yang; Wang, Chuan-Kui; Li, Zong-Liang

    2016-12-01

    The electronic transport properties of a single thiolated arylethynylene molecule with 9,10-dihydroanthracene core, denoted as TADHA, is studied by using non-equilibrium Green’s function formalism combined with ab initio calculations. The numerical results show that the TADHA molecule exhibits excellent negative differential conductance (NDC) behavior at lower bias regime as probed experimentally. The NDC behavior of TADHA molecule originates from the Stark effect of the applied bias voltage, by which the highest occupied molecular orbital (HOMO) and the HOMO-1 are pulled apart and become localized. The NDC behavior of TADHA molecular system is tunable by changing the electrode distance. Shortening the electrode separation can enhance the NDC effect which is attributed to the possible increase of coupling between the two branches of TADHA molecule. Project supported by the National Natural Science Foundation of China (Grant Nos. 11374195 and 11405098) and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2013FM006).

  4. The North Atlantic Cold Bias

    Science.gov (United States)

    Greatbatch, Richard; Drews, Annika; Ding, Hui; Latif, Mojib; Park, Wonsun

    2016-04-01

    The North Atlantic cold bias, associated with a too zonal path of the North Atlantic Current and a missing "northwest corner", is a common problem in coupled climate and forecast models. The bias affects the North Atlantic and European climate mean state, variability and predictability. We investigate the use of a flow field correction to adjust the path of the North Atlantic Current as well as additional corrections to the surface heat and freshwater fluxes. Results using the Kiel Climate Model show that the flow field correction allows a northward flow into the northwest corner, largely eliminating the bias below the surface layer. A surface cold bias remains but can be eliminated by additionally correcting the surface freshwater flux, without adjusting the surface heat flux seen by the ocean model. A model version in which only the surface fluxes of heat and freshwater are corrected continues to exhibit the incorrect path of the North Atlantic Current and a strong subsurface bias. Removing the bias impacts the multi-decadal time scale variability in the model and leads to a better representation of the SST pattern associated with the Atlantic Multidecadal Variability than the uncorrected model.

  5. Reducing bias in survival under non-random temporary emigration

    Science.gov (United States)

    Peñaloza, Claudia L.; Kendall, William L.; Langtimm, Catherine Ann

    2014-01-01

    Despite intensive monitoring, temporary emigration from the sampling area can induce bias severe enough for managers to discard life-history parameter estimates toward the terminus of the times series (terminal bias). Under random temporary emigration unbiased parameters can be estimated with CJS models. However, unmodeled Markovian temporary emigration causes bias in parameter estimates and an unobservable state is required to model this type of emigration. The robust design is most flexible when modeling temporary emigration, and partial solutions to mitigate bias have been identified, nonetheless there are conditions were terminal bias prevails. Long-lived species with high adult survival and highly variable non-random temporary emigration present terminal bias in survival estimates, despite being modeled with the robust design and suggested constraints. Because this bias is due to uncertainty about the fate of individuals that are undetected toward the end of the time series, solutions should involve using additional information on survival status or location of these individuals at that time. Using simulation, we evaluated the performance of models that jointly analyze robust design data and an additional source of ancillary data (predictive covariate on temporary emigration, telemetry, dead recovery, or auxiliary resightings) in reducing terminal bias in survival estimates. The auxiliary resighting and predictive covariate models reduced terminal bias the most. Additional telemetry data was effective at reducing terminal bias only when individuals were tracked for a minimum of two years. High adult survival of long-lived species made the joint model with recovery data ineffective at reducing terminal bias because of small-sample bias. The naïve constraint model (last and penultimate temporary emigration parameters made equal), was the least efficient, though still able to reduce terminal bias when compared to an unconstrained model. Joint analysis of several

  6. High-Voltage, Low-Power BNC Feedthrough Terminator

    Science.gov (United States)

    Bearden, Douglas

    2012-01-01

    This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

  7. The estimation method of GPS instrumental biases

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    A model of estimating the global positioning system (GPS) instrumental biases and the methods to calculate the relative instrumental biases of satellite and receiver are presented. The calculated results of GPS instrumental biases, the relative instrumental biases of satellite and receiver, and total electron content (TEC) are also shown. Finally, the stability of GPS instrumental biases as well as that of satellite and receiver instrumental biases are evaluated, indicating that they are very stable during a period of two months and a half.

  8. Low-voltage coherent electron imaging based on a single-atom electron

    OpenAIRE

    Chang, Wei-Tse; Lin, Chun-Yueh; Hsu, Wei-Hao; Chang, Mu-Tung; Chen, Yi-Sheng; Hwu, En-Te; Hwang, Ing-Shouh

    2015-01-01

    It has been a general trend to develop low-voltage electron microscopes due to their high imaging contrast of the sample and low radiation damage. Atom-resolved transmission electron microscopes with voltages as low as 15-40 kV have been demonstrated. However, achieving atomic resolution at voltages lower than 10 kV is extremely difficult. An alternative approach is coherent imaging or phase retrieval imaging, which requires a sufficiently coherent source and an adequately small detection are...

  9. Over-voltage protection system and method

    Energy Technology Data Exchange (ETDEWEB)

    Chi, Song; Dong, Dong; Lai, Rixin

    2017-05-02

    An over-voltage protection system includes an electronic valve connected across two terminals of a circuit and an over-voltage detection circuit connected across one of the plurality of semiconductor devices for detecting an over-voltage across the circuit. The electronic valve includes a plurality of semiconductor devices connected in series. The over-voltage detection circuit includes a voltage divider circuit connected to a break-over diode in a way to provide a representative low voltage to the break-over diode and an optocoupler configured to receive a current from the break-over diode when the representative low voltage exceeds a threshold voltage of the break-over diode indicating an over-voltage condition. The representative low voltage provided to the break-over diode represents a voltage across the one semiconductor device. A plurality of self-powered gate drive circuits are connected to the plurality of semiconductor devices, wherein the plurality of self-powered gate drive circuits receive over-voltage triggering pulses from the optocoupler during the over-voltage condition and switch on the plurality of semiconductor devices to bypass the circuit.

  10. Why Batteries Deliver a Fairly Constant Voltage until Dead

    Science.gov (United States)

    Smith, Garon C.; Hossain, Md. Mainul; MacCarthy, Patrick

    2012-01-01

    Two characteristics of batteries, their delivery of nearly constant voltage and their rapid failure, are explained through a visual examination of the Nernst equation. Two Galvanic cells are described in detail: (1) a wet cell involving iron and copper salts and (2) a mercury oxide dry cell. A complete description of the wet cell requires a…

  11. Why Batteries Deliver a Fairly Constant Voltage until Dead

    Science.gov (United States)

    Smith, Garon C.; Hossain, Md. Mainul; MacCarthy, Patrick

    2012-01-01

    Two characteristics of batteries, their delivery of nearly constant voltage and their rapid failure, are explained through a visual examination of the Nernst equation. Two Galvanic cells are described in detail: (1) a wet cell involving iron and copper salts and (2) a mercury oxide dry cell. A complete description of the wet cell requires a…

  12. Primary Paralleled Isolated Boost Converter with Extended Operating Voltage Range

    DEFF Research Database (Denmark)

    Hernandez Botella, Juan Carlos; Sen, Gökhan; Mira Albert, Maria del Carmen

    2012-01-01

    Applications requiring wide input and output voltage range cannot often be satisfied by using buck or boost derived topologies. Primary paralleled isolated boost converter (PPIBC) [1]-[2] is a high efficiency boost derived topology. This paper proposes a new operation mode for extending the input...

  13. Degradation of Photovoltaic Modules Under High Voltage Stress in the Field: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    del Cueto, J. A.; Rummel, S. R.

    2010-08-01

    The degradation in performance for eight photovoltaic (PV) modules stressed at high voltage (HV) is presented. Four types of modules--tandem-junction and triple-junction amorphous thin-film silicon, plus crystalline and polycrystalline silicon modules--were tested, with a pair of each biased at opposite polarities. They were deployed outdoors between 2001 and 2009 with their respective HV leakage currents through the module encapsulation continuously monitored with a data acquisition system, along with air temperature and relative humidity. For the first 5 years, all modules were biased continuously at fixed 600 VDC, day and night. In the last 2 years, the modules were step-bias stressed cyclically up and down in voltage between 10 and 600 VDC, in steps of tens to hundreds of volts. This allowed characterization of leakage current versus voltage under a large range of temperature and moisture conditions, facilitating determination of leakage paths. An analysis of the degradation is presented, along with integrated leakage charge. In HV operation: the bulk silicon modules degraded either insignificantly or at rates of 0.1%/yr higher than modules not biased at HV; for the thin-film silicon modules, the added loss rates are insignificant for one type, or 0.2%/yr-0.6%/yr larger for the other type.

  14. Neural substrates of cognitive biases during probabilistic inference.

    Science.gov (United States)

    Soltani, Alireza; Khorsand, Peyman; Guo, Clara; Farashahi, Shiva; Liu, Janet

    2016-04-26

    Decision making often requires simultaneously learning about and combining evidence from various sources of information. However, when making inferences from these sources, humans show systematic biases that are often attributed to heuristics or limitations in cognitive processes. Here we use a combination of experimental and modelling approaches to reveal neural substrates of probabilistic inference and corresponding biases. We find systematic deviations from normative accounts of inference when alternative options are not equally rewarding; subjects' choice behaviour is biased towards the more rewarding option, whereas their inferences about individual cues show the opposite bias. Moreover, inference bias about combinations of cues depends on the number of cues. Using a biophysically plausible model, we link these biases to synaptic plasticity mechanisms modulated by reward expectation and attention. We demonstrate that inference relies on direct estimation of posteriors, not on combination of likelihoods and prior. Our work reveals novel mechanisms underlying cognitive biases and contributions of interactions between reward-dependent learning, decision making and attention to high-level reasoning.

  15. Advances in high voltage engineering

    CERN Document Server

    Haddad, A

    2005-01-01

    This book addresses the very latest research and development issues in high voltage technology and is intended as a reference source for researchers and students in the field, specifically covering developments throughout the past decade. This unique blend of expert authors and comprehensive subject coverage means that this book is ideally suited as a reference source for engineers and academics in the field for years to come.

  16. High Voltage Pulse Testing Survey.

    Science.gov (United States)

    1985-10-01

    Cryogenic 23 E. Liquids 26 F. Solids 28 1. Polyethylene 28 2. Cross-Linked Polyethylene ( XLPE ) 29 3. Polyimide and Polyvenylchloride (PVC) 31 VI Benefits 35 A...Strength of XLPE Cables 29 vii * 4" I PROGRAM OBJECTIVES The Pulse Test Survey summarizes government, industry, and technical reports on high voltage pulse...system of silicone oil on a XLPE (cross-linked polyethylene) spacer tends to lower the impulse breakdown by approximately 10 percent. The negative impulse

  17. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    Science.gov (United States)

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  18. Tunable reverse-biased graphene/silicon heterojunction Schottky diode sensor.

    Science.gov (United States)

    Singh, Amol; Uddin, Ahsan; Sudarshan, Tangali; Koley, Goutam

    2014-04-24

    A new chemical sensor based on reverse-biased graphene/Si heterojunction diode has been developed that exhibits extremely high bias-dependent molecular detection sensitivity and low operating power. The device takes advantage of graphene's atomically thin nature, which enables molecular adsorption on its surface to directly alter graphene/Si interface barrier height, thus affecting the junction current exponentially when operated in reverse bias and resulting in ultrahigh sensitivity. By operating the device in reverse bias, the work function of graphene, and hence the barrier height at the graphene/Si heterointerface, can be controlled by the bias magnitude, leading to a wide tunability of the molecular detection sensitivity. Such sensitivity control is also possible by carefully selecting the graphene/Si heterojunction Schottky barrier height. Compared to a conventional graphene amperometric sensor fabricated on the same chip, the proposed sensor demonstrated 13 times higher sensitivity for NO₂ and 3 times higher for NH₃ in ambient conditions, while consuming ∼500 times less power for same magnitude of applied voltage bias. The sensing mechanism based on heterojunction Schottky barrier height change has been confirmed using capacitance-voltage measurements.

  19. Bias stress effect and recovery in organic field effect transistors: proton migration mechanism

    Science.gov (United States)

    Sharma, A.; Mathijssen, Simon G. J.; Kemerink, M.; de Leeuw, Dago M.; Bobbert, Peter A.

    2010-08-01

    Organic field-effect transistors exhibit operational instabilities when a gate bias is applied. For a constant gate bias the threshold voltage shifts towards the applied gate bias voltage, an effect known as the bias-stress effect. We have performed a detailed experimental and theoretical study of operational instabilities in p-type transistors with silicon-dioxide gate dielectric. We propose a mechanism in which holes in the semiconductor are converted into protons in the presence of water and a reversible migration of these protons into the gate dielectric to explain the instabilities in organic transistors. We show how redistribution of charge between holes in the semiconductor and protons in the gate dielectric can consistently explain the experimental observations. Furthermore, we explain in detail the recovery of a pres-stressed transistor on applying zero gate bias. We show that recovery dynamics depends strongly on the extent of stressing. Our mechanism is consistent with the known aspects of bias-stress effect like acceleration due to humidity, constant activation energy and reversibility.

  20. Optimal planning of high voltage distribution substations

    Institute of Scientific and Technical Information of China (English)

    YU Yixin; YAN Xuefei; ZHANG Yongwu

    2007-01-01

    Aimed at solving the problem of optimal planning for high voltage distribution substations,an efficient method is put forward.The method divides the problem into two sub-problems:source locating and combinational optimization.The algorithm of allocating and locating alternatively (ALA) is widely used to deal with the source locating problem,but it is dependent on the initial location to a large degree.Thus,some modifications were made to the ALA algorithm,which could greatly improve the quality of solutions.In addition,considering the non-convex and nonconcave nature of the sub-problem of combinational optimization,the branch-and-bound technique was adopted to obtain or approximate a global optimal solution.To improve the efficiency of the branch-and-bound technique,some heuristic principles were proposed to cut those branches that may generate a global optimization solution with low probability.Examples show that the proposed algorithm meets the requirement of engineering and it is an effective approach to rapidly solve the problem of optimal planning for high voltage distribution substations.

  1. Codon Bias and Mutability in HIV Sequences

    CERN Document Server

    Waelbroeck, H

    1997-01-01

    A survey of the patterns of synonymous codon preferences in the HIV env gene reveals a relation between the codon bias and the mutability requirements in different regions in the protein. At hypervariable regions in $gp120$, one finds a greater proportion of codons that tend to mutate non-synonymously, but to a target that is similar in hydrophobicity and volume. We argue that this strategy results from a compromise between the selective pressure placed on the virus by the induced immune response, which favours amino acid substitutions in the complementarity determining regions, and the negative selection against missense mutations that violate structural constraints of the env protein.

  2. Electrically controlled exchange bias for spintronic applications

    Science.gov (United States)

    He, Xi; Polisetty, Srinivas; Binek, Christian

    2006-03-01

    Electrically controlled exchange bias (EB) is proposed for novel spintronic applications [1]. Basic effects of electrically controlled EB and its magnetoelectric (ME) switching are studied in a Cr2O3(111)/(Co/Pt)3 heterostructure. Exchange coupling between the ME antiferromagnet Cr2O3 and a ferromagnetic CoPt multilayer exhibits perpendicular EB. The latter is controlled by applied axial electric fields inducing excess magnetization at the interface. The enhancement of this hitherto weak tuning effect is explored when replacing ME bulk pinning systems by epitaxal thin films. Recently, the sign of the EB field has been tuned via field cooling the system in either parallel or antiparallel axial magnetic and electric fields [2].Here, the crossover from bulk to thin film ME pinning systems is studied and spintronic applications are suggested based on the electrically controlled EB. Pure voltage control of magnetic configurations of tunneling magnetoresistance spin valves is proposed as an alternative to current-induced magnetization switching. In addition we suggest an XOR operation realized in a MEally pinned giant magneto resistance structure. [1] Ch. Binek, B.Doudin, J. Phys. Condens. Matter 17, L39 (2005). [2] P. Borisov et al., Phys. Rev. Lett. 94, 117203 (2005).

  3. FractBias: a graphical tool for assessing fractionation bias following polyploidy.

    Science.gov (United States)

    Joyce, Blake L; Haug-Baltzell, Asher; Davey, Sean; Bomhoff, Matthew; Schnable, James C; Lyons, Eric

    2017-02-15

    Following polyploidy events, genomes undergo massive reduction in gene content through a process known as fractionation. Importantly, the fractionation process is not always random, and a bias as to which homeologous chromosome retains or loses more genes can be observed in some species. The process of characterizing whole genome fractionation requires identifying syntenic regions across genomes followed by post-processing of those syntenic datasets to identify and plot gene retention patterns. We have developed a tool, FractBias, to calculate and visualize gene retention and fractionation patterns across whole genomes. Through integration with SynMap and its parent platform CoGe, assembled genomes are pre-loaded and available for analysis, as well as letting researchers integrate their own data with security options to keep them private or make them publicly available. FractBias is freely available as a web application at https://genomevolution.org/CoGe/SynMap.pl . The software is open source (MIT license) and executable with Python 2.7 or iPython notebook, and available on GitHub ( https://goo.gl/PaAtqy ). Documentation for FractBias is available on CoGepedia ( https://goo.gl/ou9dt6 ). ericlyons@email.arizona.edu. Supplementary data are available at Bioinformatics online.

  4. Intensity Biased PSP Measurement

    Science.gov (United States)

    Subramanian, Chelakara S.; Amer, Tahani R.; Oglesby, Donald M.; Burkett, Cecil G., Jr.

    2000-01-01

    The current pressure sensitive paint (PSP) technique assumes a linear relationship (Stern-Volmer Equation) between intensity ratio (I(sub o)/I) and pressure ratio (P/P(sub o)) over a wide range of pressures (vacuum to ambient or higher). Although this may be valid for some PSPs, in most PSPs the relationship is nonlinear, particularly at low pressures (less than 0.2 psia when the oxygen level is low). This non-linearity can be attributed to variations in the oxygen quenching (de-activation) rates (which otherwise is assumed constant) at these pressures. Other studies suggest that some paints also have non-linear calibrations at high pressures; because of heterogeneous (non-uniform) oxygen diffusion and quenching. Moreover, pressure sensitive paints require correction for the output intensity due to light intensity variation, paint coating variation, model dynamics, wind-off reference pressure variation, and temperature sensitivity. Therefore to minimize the measurement uncertainties due to these causes, an insitu intensity correction method was developed. A non-oxygen quenched paint (which provides a constant intensity at all pressures, called non-pressure sensitive paint, NPSP) was used for the reference intensity (I(sub NPSP) with respect to which all the PSP intensities (I) were measured. The results of this study show that in order to fully reap the benefits of this technique, a totally oxygen impermeable NPSP must be available.

  5. Piezo Voltage Controlled Planar Hall Effect Devices

    OpenAIRE

    Bao Zhang; Kang-Kang Meng; Mei-Yin Yang; Edmonds, K. W.; Hao Zhang; Kai-Ming Cai; Yu Sheng; Nan Zhang; Yang Ji; Jian-Hua Zhao; Hou-Zhi Zheng; Kai-You Wang

    2015-01-01

    The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the pie...

  6. Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

    Directory of Open Access Journals (Sweden)

    Sangeeta Singh

    2016-03-01

    Full Text Available In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS to lower the breakdown voltage of conventional impact ionization MOS (IMOS and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization and source induced barrier tunneling. The silicide source offers very low parasitic resistance, the outcome of which is an increment in voltage drop across the intrinsic region for the same applied bias. This reduces operating voltage and hence, it exhibits a significant reduction in both breakdown and threshold voltage. STS-IMOS shows high immunity against hot electron damage. As a result of this the device reliability increases magnificently. The analytical model for impact ionization current (Iii is developed based on the integration of ionization integral (M. Similarly, to get Schottky tunneling current (ITun expression, Wentzel–Kramers–Brillouin (WKB approximation is employed. Analytical models for threshold voltage and subthreshold slope is optimized against Schottky barrier height (ϕB variation. The expression for the drain current is computed as a function of gate-to-drain bias via integral expression. It is validated by comparing it with the technology computer-aided design (TCAD simulation results as well. In essence, this analytical framework provides the physical background for better understanding of STS-IMOS and its performance estimation.

  7. Voltage rise mitigation for solar PV integration at LV grids

    DEFF Research Database (Denmark)

    Yang, Guangya; Marra, Francesco; Juamperez Goñi, Miguel Angel

    2015-01-01

    Solar energy from photovoltaic (PV) is among the fastest developing renewable energy systems worldwide. Driven by governmental subsidies and technological development, Europe has seen a fast expansion of solar PV in the last few years. Among the installed PV plants, most of them are situated...... at the distribution systems and bring various operational challenges such as power quality and power flow management. The paper discusses the modelling requirements for PV system integration studies, as well as the possible techniques for voltage rise mitigation at low voltage (LV) grids for increasing PV penetration...

  8. CMS Preshower (ES) : proposal for Protective Earthing of the subdetector and of its Silicon bias supply system

    CERN Document Server

    Wertelaers, P

    2010-01-01

    There are no good arguments to apply for a derogatory "IT" (Isolé/Terre) earthing scheme for the Preshower, and thus, an appropriate earthing of on-detector active parts is discussed. Complication comes from the absence of a strong DC link between the modules' grounds and the structure, and the safety tying must be obstructed. Fortunately, the bias system is the only Low Voltage supplying system, the other powering is Extra-Low Voltage. The bias supplies have a (very) limited maximum current, and the proposed obstructed tying can even deal with the most extreme type of insulation fault. (Initial electrical safety clearance was based upon elements from this Note.)

  9. A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

    Directory of Open Access Journals (Sweden)

    Bradley D. Christiansen

    2012-01-01

    Full Text Available Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V and current (>1.8 A/mm for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

  10. 49 CFR 234.221 - Lamp voltage.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Lamp voltage. 234.221 Section 234.221 Transportation Other Regulations Relating to Transportation (Continued) FEDERAL RAILROAD ADMINISTRATION..., Inspection, and Testing Maintenance Standards § 234.221 Lamp voltage. The voltage at each lamp shall...

  11. Bootstrapped Low-Voltage Analog Switches

    DEFF Research Database (Denmark)

    Steensgaard-Madsen, Jesper

    1999-01-01

    Novel low-voltage constant-impedance analog switch circuits are proposed. The switch element is a single MOSFET, and constant-impedance operation is obtained using simple circuits to adjust the gate and bulk voltages relative to the switched signal. Low-voltage (1-volt) operation is made feasible...

  12. Adaptive Voltage Management Enabling Energy Efficiency in Nanoscale Integrated Circuits

    Science.gov (United States)

    Shapiro, Alexander E.

    Battery powered devices emphasize energy efficiency in modern sub-22 nm CMOS microprocessors rendering classic power reduction solutions not sufficient. Classical solutions that reduce power consumption in high performance integrated circuits are superseded with novel and enhanced power reduction techniques to enable the greater energy efficiency desired in modern microprocessors and emerging mobile platforms. Dynamic power consumption is reduced by operating over a wide range of supply voltages. This region of operation is enabled by a high speed and power efficient level shifter which translates low voltage digital signals to higher voltages (and vice versa), a key component that enables communication among circuits operating at different voltage levels. Additionally, optimizing the wide supply voltage range of signals propagating across long interconnect enables greater energy savings. A closed-form delay model supporting wide voltage range is developed to enable this capability. The model supports an ultra-wide voltage range from nominal voltages to subthreshold voltages, and a wide range of repeater sizes. To mitigate the drawback of lower operating speed at reduced supply voltages, the high performance exhibited by MOS current mode logic technology is exploited. High performance and energy efficient circuits are enabled by combining this logic style with power efficient near threshold circuits. Many-core systems that operate at high frequencies and process highly parallel workloads benefit from this combination of MCML with NTC. Due to aggressive scaling, static power consumption can in some cases overshadow dynamic power. Techniques to lower leakage power have therefore become an important objective in modern microprocessors. To address this issue, an adaptive power gating technique is proposed. This technique utilizes high levels of granularity to save additional leakage power when a circuit is active as opposed to standard power gating that saves static

  13. Similar compositional biases are caused by very different mutational effects

    Science.gov (United States)

    Rocha, Eduardo P.C.; Touchon, Marie; Feil, Edward J.

    2006-01-01

    Compositional replication strand bias, commonly referred to as GC skew, is present in many genomes of prokaryotes, eukaryotes, and viruses. Although cytosine deamination in ssDNA (resulting in C→T changes on the leading strand) is often invoked as its major cause, the precise contributions of this and other substitution types are currently unknown. It is also unclear if the underlying mutational asymmetries are the same among taxa, are stable over time, or how closely the observed biases are to mutational equilibrium. We analyzed nearly neutral sites of seven taxa each with between three and six complete bacterial genomes, and inferred the substitution spectra of fourfold degenerate positions in nonhighly expressed genes. Using a bootstrap procedure, we extracted compositional biases associated with replication and identified the significant asymmetries. Although all taxa showed an overrepresentation of G relative to C on the leading strand (and imbalances between A and T), widely variable substitution asymmetries are noted. Surprisingly, all substitution types show significant asymmetry in at least one taxon, but none were universally biased in all taxa. Notably, in the two most biased genomes, A→G, rather than C→T, shapes the compositional bias. Given the variability in these biases, we propose that the process is multifactorial. Finally, we also find that most genomes are not at compositional equilibrium, and suggest that mutational-based heterotachy is deeply imprinted in the history of biological macromolecules. This shows that similar compositional biases associated with the same essential well-conserved process, replication, do not reflect similar mutational processes in different genomes, and that caution is required in inferring the roles of specific mutational biases on the basis of contemporary patterns of sequence composition. PMID:17068325

  14. A flexible low-voltage ride-through operation for the distributed generation converters

    DEFF Research Database (Denmark)

    Chen, Hsin-Chih; Lee, Chia-Tse; Cheng, Po-Tai;

    2013-01-01

    -sequence current injection method is proposed to meet the low-voltage ride through (LVRT) requirement. The proposed method predefined a current constraint to avoid the overcurrent during the LVRT operation and adjust the positive-sequence reactive current to reduce the DC-bus voltage ripple. Comparisons...

  15. Rotor Voltage Dynamics in the Doubly Fed Induction Generator During Grid Faults

    DEFF Research Database (Denmark)

    Lima, Francisco K. A.; Luna, Alvaro; Rodriguez, Pedro

    2010-01-01

    , something that would permit the injection of power to the grid during the fault, as the new grid codes demand. A theoretical study of the dynamical behavior of the rotor voltage is also developed, in order to show that the voltage at the rotor terminals required for the control strategy implementation...

  16. Electronics drivers for high voltage dielectric electro active polymer (DEAP) applications

    DEFF Research Database (Denmark)

    Zhang, Zhe; Andersen, Michael A. E.

    2015-01-01

    ), but the voltage balancing across the series - connected high voltage IGBTs is a critical issue and accordi ngly a novel gate driver circuitry is proposed and equipped; due to the requirements of the audio products, such as low distortion and noise, the multi - level Buck converter based Class - D amplifier...

  17. Gender bias in academic recruitment

    DEFF Research Database (Denmark)

    Abramo, Giovanni; D’Angelo, Ciriaco Andrea; Rosati, Francesco

    2016-01-01

    It is well known that women are underrepresented in the academic systems of many countries. Gender discrimination is one of the factors that could contribute to this phenomenon. This study considers a recent national academic recruitment campaign in Italy, examining whether women are subject...... to more or less bias than men. The findings show that no gender-related differences occur among the candidates who benefit from positive bias, while among those candidates affected by negative bias, the incidence of women is lower than that of men. Among the factors that determine success in a competition...... for an academic position, the number of the applicant’s career years in the same university as the committee members assumes greater weight for male candidates than for females. Being of the same gender as the committee president is also a factor that assumes greater weight for male applicants. On the other hand...

  18. Anchoring Bias in Online Voting

    CERN Document Server

    Yang, Zimo; Zhou, Tao

    2012-01-01

    Voting online with explicit ratings could largely reflect people's preferences and objects' qualities, but ratings are always irrational, because they may be affected by many unpredictable factors like mood, weather, as well as other people's votes. By analyzing two real systems, this paper reveals a systematic bias embedding in the individual decision-making processes, namely people tend to give a low rating after a low rating, as well as a high rating following a high rating. This so-called \\emph{anchoring bias} is validated via extensive comparisons with null models, and numerically speaking, the extent of bias decays with interval voting number in a logarithmic form. Our findings could be applied in the design of recommender systems and considered as important complementary materials to previous knowledge about anchoring effects on financial trades, performance judgements, auctions, and so on.

  19. Voltage-controlled sub-terahertz radiation transmission through GaN quantum well structure

    Science.gov (United States)

    Laurent, T.; Sharma, R.; Torres, J.; Nouvel, P.; Blin, S.; Varani, L.; Cordier, Y.; Chmielowska, M.; Chenot, S.; Faurie, J.-P.; Beaumont, B.; Shiktorov, P.; Starikov, E.; Gruzinskis, V.; Korotyeyev, V. V.; Kochelap, V. A.

    2011-08-01

    We report on measurements of radiation transmission in the 0.220-0.325 THz frequency range through GaN quantum wells grown on sapphire substrates at nitrogen and room temperatures. Significant enhancement of the transmitted beam intensity with applied voltage is found at nitrogen temperature. This effect is explained by changes in the mobility of two-dimensional electrons under electric bias. We have clarified which physical mechanism modifies the electron mobility and we suggest that the effect of voltage-controlled sub-terahertz transmission can be used for the development of electro-optic modulators operating in the sub-THz frequency range.

  20. Comparison of two voltage control strategies for a wind power plant

    DEFF Research Database (Denmark)

    Martinez, Jorge; Kjær, Philip C.; Rodriguez, Pedro

    2011-01-01

    , it is possible to investigate the influence of the plant control gain, short circuit ratio, and time delays on the system stability, as well as the fulfillment of the design requirements. The implemented plant voltage control is based on a slope voltage controller, which calculates the references to be sent...... to the wind turbines, according to the slope gain and the difference between the reference and measured voltage at the point of connection. The results show that for a system where the time delay between the central control and the actuators is not negligible, the performance of a decentralized voltage...

  1. Design of a high voltage stimulator chip for a stroke rehabilitation system.

    Science.gov (United States)

    Zeng, Lei; Yi, Xin; Lu, Sheng; Lou, Yuan; Jiang, Jianfei; Qu, Hongen; Lan, Ning; Wang, Guoxing

    2013-01-01

    This paper describes the design of an 8-channel high voltage stimulator chip for rehabilitation of stroke patients through surface stimulation, which requires high stimulation currents and high compliance voltage. The chip gets stimulation control data through its Serial Peripheral Interface (SPI), and can accordingly generate biphasic stimulation currents with different amplitudes, duration, frequencies and polarities independently for each channel. The current driver is implemented with thick oxide devices with a supply voltage up to 90V. The chip is designed in a 0.35εm X-FAB high voltage process.

  2. Secondary control for reactive power sharing and voltage amplitude restoration in droop-controlled islanded microgrids

    DEFF Research Database (Denmark)

    Micallef, A.; Apap, M.; Spiteri Staines, C.

    2012-01-01

    This paper focuses on the islanded operation of microgrids. In this mode of operation, the microsources are required to cooperate autonomously to regulate the local grid voltage and frequency. Droop control is typically used to achieve this autonomous voltage and frequency regulation. However...... and to restore the voltage deviations caused by the droop control. Primary droop control loops where implemented in the inverters to supply the real and reactive power. Simulation results are presented showing the feasibility of the proposed algorithm in achieving reactive power sharing between the inverters...... connected to the microgrid while simultaneously restoring the voltage deviations due to the droop control....

  3. Without Bias: A Guidebook for Nondiscriminatory Communication.

    Science.gov (United States)

    Pickens, Judy E., Ed.; And Others

    This guidebook discusses ways to eliminate various types of discrimination from business communications. Separately authored chapters discuss eliminating racial and ethnic bias; eliminating sexual bias; achieving communication sensitive about handicaps of disabled persons; eliminating bias from visual media; eliminating bias from meetings,…

  4. The Truth and Bias Model of Judgment

    Science.gov (United States)

    West, Tessa V.; Kenny, David A.

    2011-01-01

    We present a new model for the general study of how the truth and biases affect human judgment. In the truth and bias model, judgments about the world are pulled by 2 primary forces, the truth force and the bias force, and these 2 forces are interrelated. The truth and bias model differentiates force and value, where the force is the strength of…

  5. The Truth and Bias Model of Judgment

    Science.gov (United States)

    West, Tessa V.; Kenny, David A.

    2011-01-01

    We present a new model for the general study of how the truth and biases affect human judgment. In the truth and bias model, judgments about the world are pulled by 2 primary forces, the truth force and the bias force, and these 2 forces are interrelated. The truth and bias model differentiates force and value, where the force is the strength of…

  6. Unpacking the Evidence of Gender Bias

    Science.gov (United States)

    Fulmer, Connie L.

    2010-01-01

    The purpose of this study was to investigate gender bias in pre-service principals using the Gender-Leader Implicit Association Test. Analyses of student-learning narratives revealed how students made sense of gender bias (biased or not-biased) and how each reacted to evidence (surprised or not-surprised). Two implications were: (1) the need for…

  7. Measurement Bias Detection through Factor Analysis

    Science.gov (United States)

    Barendse, M. T.; Oort, F. J.; Werner, C. S.; Ligtvoet, R.; Schermelleh-Engel, K.

    2012-01-01

    Measurement bias is defined as a violation of measurement invariance, which can be investigated through multigroup factor analysis (MGFA), by testing across-group differences in intercepts (uniform bias) and factor loadings (nonuniform bias). Restricted factor analysis (RFA) can also be used to detect measurement bias. To also enable nonuniform…

  8. Codon Pair Bias Is a Direct Consequence of Dinucleotide Bias

    Directory of Open Access Journals (Sweden)

    Dusan Kunec

    2016-01-01

    Full Text Available Codon pair bias is a remarkably stable characteristic of a species. Although functionally uncharacterized, robust virus attenuation was achieved by recoding of viral proteins using underrepresented codon pairs. Because viruses replicate exclusively inside living cells, we posited that their codon pair preferences reflect those of their host(s. Analysis of many human viruses showed, however, that the encoding of viruses is influenced only marginally by host codon pair preferences. Furthermore, examination of codon pair preferences of vertebrate, insect, and arthropod-borne viruses revealed that the latter do not utilize codon pairs overrepresented in arthropods more frequently than other viruses. We found, however, that codon pair bias is a direct consequence of dinucleotide bias. We conclude that codon pair bias does not play a major role in the encoding of viral proteins and that virus attenuation by codon pair deoptimization has the same molecular underpinnings as attenuation based on an increase in CpG/TpA dinucleotides.

  9. The Threshold of Embedded M Collider Bias and Confounding Bias

    Science.gov (United States)

    Kelcey, Benjamin; Carlisle, Joanne

    2011-01-01

    Of particular import to this study, is collider bias originating from stratification on retreatment variables forming an embedded M or bowtie structural design. That is, rather than assume an M structural design which suggests that "X" is a collider but not a confounder, the authors adopt what they consider to be a more reasonable…

  10. Subnanowatt carbon nanotube complementary logic enabled by threshold voltage control.

    Science.gov (United States)

    Geier, Michael L; Prabhumirashi, Pradyumna L; McMorrow, Julian J; Xu, Weichao; Seo, Jung-Woo T; Everaerts, Ken; Kim, Chris H; Marks, Tobin J; Hersam, Mark C

    2013-10-09

    In this Letter, we demonstrate thin-film single-walled carbon nanotube (SWCNT) complementary metal-oxide-semiconductor (CMOS) logic devices with subnanowatt static power consumption and full rail-to-rail voltage transfer characteristics as is required for logic gate cascading. These results are enabled by a local metal gate structure that achieves enhancement-mode p-type and n-type SWCNT thin-film transistors (TFTs) with widely separated and symmetric threshold voltages. These complementary SWCNT TFTs are integrated to demonstrate CMOS inverter, NAND, and NOR logic gates at supply voltages as low as 0.8 V with ideal rail-to-rail operation, subnanowatt static power consumption, high gain, and excellent noise immunity. This work provides a direct pathway for solution processable, large area, power efficient SWCNT advanced logic circuits and systems.

  11. A torsional sensor for MEMS-based RMS voltage measurements

    Directory of Open Access Journals (Sweden)

    J. Dittmer

    2008-05-01

    Full Text Available RF voltage measurement based on electrostatic RMS voltage-to-force conversion is an alternative method in comparison to the conventional thermal power dissipation method. It is based on a mechanical force induced by an RF voltage applied to a micro-mechanical system. For a theoretically adequate resolution and high precision measurements, the necessary geometrical dimensions of the sensor require the application of micro machining. In this contribution, the dependence between electrical and geometrical properties of different sensor designs is investigated. Based on these results, problems related to practical micro-machining and solutions with respect to possible sensor realizations are discussed. The evolution of different sensor generations is shown.

  12. Stability Boundaries for Offshore Wind Park Distributed Voltage Control

    DEFF Research Database (Denmark)

    Gryning, Mikkel P.S.; Wu, Qiuwei; Kocewiak, Lukasz;

    2016-01-01

    In order to identify mechanisms causing slow reactive power oscillations observed in an existing offshore wind power plant, and be able to avoid similar events in the future, voltage control is studied in this paper for a plant with a static synchronous compensator, type-4 wind turbines and a park...... pilot control. Using data from the actual wind power plant, all stabilizing subsystem voltage proportional-integral controller parameters are first characterized based on their Hurwitz signature. Inner loop current control is then designed using Internal Mode Control principles, and guidelines for feed...... forward filter design are given to obtain required disturbance rejection properties. The paper contributes by providing analytical relations between power plant control, droop, sampling time, electrical parameters and voltage control characteristics, and by assessing frequencies and damping of reactive...

  13. Bias voltage dependence of a flux-sensitive Al/GaAs/Al (SNS) interferometer

    DEFF Research Database (Denmark)

    Kutchinsky, Jonatan; Taboryski, Rafael Jozef; Hansen, Jørn Bindslev

    1999-01-01

    We report new results on interferometers based on high transparency superconductor-semiconductor-superconductor junctions composed of Al and highly doped GaAs. The fabricated devices consist of planar de-SQUID like geometries with an effective flux-sensitive area of about 100-150 mu m(2). At zero...

  14. Micromechanical Disk Array for Enhanced Frequency Stability Against Bias Voltage Fluctuations

    Science.gov (United States)

    2014-11-20

    sense of humor . I would also like to thank Professor Liwei Lin for reading this research report. His course ME219 (Parametric and Optimal Design of...work provides designers with needed visual cues that enable them to more intelligently choose device topologies to maximize the performance of

  15. Electroluminescence from ZnO/Si heterojunctions fabricated by PLD with bias voltage application

    Energy Technology Data Exchange (ETDEWEB)

    Seno, Yuuki; Konno, Daisuke; Komiyama, Takao; Chonan, Yasunori; Yamaguchi, Hiroyuki; Aoyama, Takashi [Electronics and Information Systems, Akita Prefectural Univ. Yuri-honjo, Akita 015-0055 (Japan)

    2014-02-21

    Electroluminescence (EL) for ZnO films has been investigated by fabricating n-ZnO/p-Si heterojunctions and changing the VI/II (O/Zn) ratio of the films. In the photoluminescence (PL) spectra, both the near band edge (NBE) emission and the defect-related emission were observed, while in the EL spectra only defect-related emission was observed. The EL spectra were divided into three components: green (550 nm), yellow (618 nm) and red (700 nm) bands; and their intensities were compared. As the VI/II (O/Zn) ratio was increased, the red band emission intensity decreased and the green band emission intensity increased. This implies that the oxygen and the zinc vacancies are related to the red and the green band emissions, respectively. Electron transitions from the conduction band minimum (Ec) to the deep energy levels of these vacancies are suggested to cause the red and the green luminescences while the energy levels of the Zn interstitials are close to the Ec in the band gap and no NBE emission is observed.

  16. 1/f noise in forward biased high voltage 4H-SiC Schottky diodes

    Science.gov (United States)

    Shabunina, Eugenia I.; Levinshtein, Michael E.; Shmidt, Natalia M.; Ivanov, Pavel A.; Palmour, John W.

    2014-06-01

    The 1/f noise has been investigated for the first time at 300 and 77 K in high-quality 4H-SiC Schottky diodes. It is shown that, at 77 K, the dependence of the spectral noise density on current, SI(I), differs fundamentally between the cases of the current flowing through the main part of the diode with a comparatively high barrier and the current flowing through the nano-sized patches with a comparatively low barrier.

  17. Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Kuan-Hsien; Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Wu, Ming-Siou; Hung, Yi-Syuan; Sze, Simon M. [Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Hung, Pei-Hua; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsieh, Tien-Yu [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Yeh, Bo-Liang [Advanced Display Technology Research Center, AU Optronics, No. 1, Li-Hsin Rd. 2, Hsinchu Science Park, Hsinchu 30078, Taiwan (China)

    2014-03-31

    This Letter investigates abnormal channel width-dependent threshold voltage variation in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Unlike drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, the wider the channel, the larger the threshold voltage observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider channel devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast IV measurement is utilized to demonstrate the self-heating induced anomalous channel width-dependent threshold voltage variation.

  18. Asymmetrical magneto-impedance in a sandwich film with a transverse anisotropy using an AC bias

    CERN Document Server

    Makhnovskiy, D P; Mapps, D J

    2000-01-01

    A new method of obtaining asymmetrical magneto-impedance in a film system consisting of two outer magnetic layers and an inner conductive lead is proposed, which utilizes a high-frequency longitudinal bias field. For a certain magnetic structure, as in the case of antisymmetrical transverse magnetization in the outer layers, in the presence of a longitudinal DC magnetic field H sub e sub x the AC bias field induces a high-frequency circulatory magnetization which contributes to the voltage measured across the film. Depending on the sign of H sub e sub x , this voltage is in phase or counter-phase with that induced by the current flowing along the film layers. As a result, the total voltage does not respond in the same way to positive and negative H sub e sub x. This process is described in terms of the surface impedance tensor. The contribution to the voltage due to the current and the bias field is given by the diagonal and off-diagonal components of this tensor, respectively, which have a different symmetry...

  19. Voltage Management in Unbalanced Low Voltage Networks Using a Decoupled Phase-Tap-Changer Transformer

    DEFF Research Database (Denmark)

    Coppo, Massimiliano; Turri, Roberto; Marinelli, Mattia

    2014-01-01

    The paper studies a medium voltage-low voltage transformer with a decoupled on load tap changer capability on each phase. The overall objective is the evaluation of the potential benefits on a low voltage network of such possibility. A realistic Danish low voltage network is used for the analysis...

  20. Estimating Voltage Asymmetry Making by One Phase Micro-generator in Low Voltage Network

    Directory of Open Access Journals (Sweden)

    Marian Sobierajski

    2014-12-01

    Full Text Available Connection of one phase micro-generator to the low voltage network increases voltage asymmetry. The voltage asymmetry is defined as the quotient of negative and positive voltage components. The mathematical background of exact and rough computation of the asymmetry quotient is presented in the paper. Considerations are illustrated by simple examples.