A High-Linearity Low-Noise Amplifier with Variable Bandwidth for Neural Recoding Systems

Science.gov (United States)

Yoshida, Takeshi; Sueishi, Katsuya; Iwata, Atsushi; Matsushita, Kojiro; Hirata, Masayuki; Suzuki, Takafumi

2011-04-01

This paper describes a low-noise amplifier with multiple adjustable parameters for neural recording applications. An adjustable pseudo-resistor implemented by cascade metal-oxide-silicon field-effect transistors (MOSFETs) is proposed to achieve low-signal distortion and wide variable bandwidth range. The amplifier has been implemented in 0.18 µm standard complementary metal-oxide-semiconductor (CMOS) process and occupies 0.09 mm2 on chip. The amplifier achieved a selectable voltage gain of 28 and 40 dB, variable bandwidth from 0.04 to 2.6 Hz, total harmonic distortion (THD) of 0.2% with 200 mV output swing, input referred noise of 2.5 µVrms over 0.1-100 Hz and 18.7 µW power consumption at a supply voltage of 1.8 V.

On the unlimited gain of a nonlinear parametric amplifier

DEFF Research Database (Denmark)

Sorokin, Vladislav

2014-01-01

The present paper is concerned with analysis of the response of a nonlinear parametric amplifier in abroad range of system parameters, particularly beyond resonance. Such analysis is of particular interestfor micro- and nanosystems, since many small-scale parametric amplifiers exhibit a distinctly...... nonlinearbehavior when amplitude of their response is sufficiently large. The modified method of direct separa-tion of motions is employed to study the considered system. As the result it is obtained that steady-stateamplitude of the nonlinear parametric amplifier response can reach large values in the case...... of arbitrarilysmall amplitude of external excitation, so that the amplifier gain tends to infinity. Very large amplifiergain can be achieved in a broad range of system parameters, in particular when the amplitude of para-metric excitation is comparatively small. The obtained results clearly demonstrate that very...

Giant Pulse Phenomena in a High Gain Erbium Doped Fiber Amplifier

Science.gov (United States)

Li, Stephen X.; Merritt, Scott; Krainak, Michael A.; Yu, Anthony

2018-01-01

High gain Erbium Doped Fiber Amplifiers (EDFAs) are vulnerable to optical damage when unseeded, e.g. due to nonlinear effects that produce random, spontaneous Q-switched (SQS) pulses with high peak power, i.e. giant pulses. Giant pulses can damage either the components within a high gain EDFA or external components and systems coupled to the EDFA. We explore the conditions under which a reflective, polarization-maintaining (PM), core-pumped high gain EDFA generates giant pulses, provide details on the evolution of normal pulses into giant pulses, and provide results on the transient effects of giant pulses on an amplifier's fused-fiber couplers, an effect which we call Fiber Overload Induced Leakage (FOIL). While FOIL's effect on fused-fiber couplers is temporary, its damage to forward pump lasers in a high gain EDFA can be permanent.

Lower-power, high-linearity class-AB current-mode programmable gain amplifier

International Nuclear Information System (INIS)

Wu Yiqiang; Wang Zhigong; Wang Junliang; Ma Li; Xu Jian; Tang Lu

2014-01-01

A novel class-AB implementation of a current-mode programmable gain amplifier (CPGA) including a current-mode DC offset cancellation loop is presented. The proposed CPGA is based on a current amplifier and provides a current gain in a range of 40 dB with a 1 dB step. The CPGA is characterized by a wide range of current gain variation, a lower power dissipation, and a small chip size. The proposed circuit is fabricated using a 0.18 μm CMOS technology. The CPGA draws a current of less than 2.52 mA from a 1.8 V supply while occupying an active area of 0.099 μm 2 . The measured results show an overall gain variation from 10 to 50 dB with a gain error of less than 0.40 dB. The OP 1dB varies from 11.80 to 13.71 dBm, and the 3 dB bandwidth varies from 22.2 to 34.7 MHz over the whole gain range. (semiconductor integrated circuits)

A high gain wide dynamic range transimpedance amplifier for optical receivers

International Nuclear Information System (INIS)

Liu Lianxi; Zou Jiao; Liu Shubin; Niu Yue; Zhu Zhangming; Yang Yintang; En Yunfei

2014-01-01

As the front-end preamplifiers in optical receivers, transimpedance amplifiers (TIAs) are commonly required to have a high gain and low input noise to amplify the weak and susceptible input signal. At the same time, the TIAs should possess a wide dynamic range (DR) to prevent the circuit from becoming saturated by high input currents. Based on the above, this paper presents a CMOS transimpedance amplifier with high gain and a wide DR for 2.5 Gbit/s communications. The TIA proposed consists of a three-stage cascade pull push inverter, an automatic gain control circuit, and a shunt transistor controlled by the resistive divider. The inductive-series peaking technique is used to further extend the bandwidth. The TIA proposed displays a maximum transimpedance gain of 88.3 dBΩ with the −3 dB bandwidth of 1.8 GHz, exhibits an input current dynamic range from 100 nA to 10 mA. The output voltage noise is less than 48.23 nV/√Hz within the −3 dB bandwidth. The circuit is fabricated using an SMIC 0.18 μm 1P6M RFCMOS process and dissipates a dc power of 9.4 mW with 1.8 V supply voltage. (semiconductor integrated circuits)

Optimization of pump parameters for gain flattened Raman fiber amplifiers based on artificial fish school algorithm

Science.gov (United States)

Jiang, Hai Ming; Xie, Kang; Wang, Ya Fei

2011-11-01

In this work, a novel metaheuristic named artificial fish school algorithm is introduced into the optimization of pump parameters for the design of gain flattened Raman fiber amplifiers for the first time. Artificial fish school algorithm emulates three simple social behaviors of a fish in a school, namely, preying, swarming and following, to optimize a target function. In this algorithm the pump wavelengths and power levels are mapped respectively to the state of a fish in a school, and the gain of a Raman fiber amplifier is mapped to the concentration of a food source for the fish school to search. Application of this algorithm to the design of a C-band gain flattened Raman fiber amplifier leads to an optimized amplifier that produces a flat gain spectrum with 0.63 dB in band ripple for given conditions. This result demonstrates that the artificial fish school algorithm is efficient for the optimization of pump parameters of gain flattened Raman fiber amplifiers.

Mode control in a high-gain relativistic klystron amplifier

Science.gov (United States)

Li, Zheng-Hong; Zhang, Hong; Ju, Bing-Quan; Su, Chang; Wu, Yang

2010-05-01

Middle cavities between the input and output cavity can be used to decrease the required input RF power for the relativistic klystron amplifier. Meanwhile higher modes, which affect the working mode, are also easy to excite in a device with more middle cavities. In order for the positive feedback process for higher modes to be excited, a special measure is taken to increase the threshold current for such modes. Higher modes' excitation will be avoided when the threshold current is significantly larger than the beam current. So a high-gain S-band relativistic klystron amplifier is designed for the beam of current 5 kA and beam voltage 600 kV. Particle in cell simulations show that the gain is 1.6 × 105 with the input RF power of 6.8 kW, and that the output RF power reaches 1.1 GW.

Remote Acquisition Amplifier For 50-Ohm Cable

Science.gov (United States)

Amador, Jose J.

1995-01-01

Buffer-amplifier unit designed to drive 50-Ohm cables up to 100 ft. (30 m) long, compensating for attenuation in cables and enabling remote operation of oscilloscopes. Variable resistor provides for adjustment of gain of amplifier, such that overall gain from input terminals of amplifier to output end of cable set to unity.

Extinction Ratio and Gain Optimization of Dual- Pump Degenerate-Idler Phase Sensitive Amplifiers

DEFF Research Database (Denmark)

Kang, Ning; Lund-Hansen, Toke; Seoane, Jorge

2011-01-01

Numerical optimization of dual-pump degenerateidler phase sensitive amplifiers is performed for Al-doped and standard highly nonlinear fibers. Design considerations for operating the PSAs at an optimum combination of gain and extinction ratio are discussed.......Numerical optimization of dual-pump degenerateidler phase sensitive amplifiers is performed for Al-doped and standard highly nonlinear fibers. Design considerations for operating the PSAs at an optimum combination of gain and extinction ratio are discussed....

Measurements of gain and index dynamics in quantum dash semiconductor optical amplifiers

DEFF Research Database (Denmark)

Poel, Mike van der; Berg, Tommy Winther; Mørk, Jesper

2004-01-01

Ultrafast gain and index recovery of a 1.5um quantum dash amplifier after short pulse amplification is measured using pump-probe spectroscopy. The major part of the gain reduction is found to recover within a few picoseconds....

Criterion of transverse coherence of self-amplified spontaneous emission in high gain free electron laser amplifiers

International Nuclear Information System (INIS)

Xie, M.; Kim, K.J.

1995-01-01

In a high gain free electron laser amplifier based on Self-Amplified Spontaneous Emission (SASE) the spontaneous radiation generated by an electron beam near the undulator entrance is amplified many orders of magnitude along the undulator. The transverse coherence properties of the amplified radiation depends on both the amplification process and the coherence of the seed radiation (the undulator radiation generated in the first gain length or so). The evolution of the transverse coherence in the amplification process is studied based on the solution of the coupled Maxwell-Vlasov equations including higher order transverse modes. The coherence of the seed radiation is determined by the number of coherent modes in the phase space area of the undulator radiation. We discuss the criterion of transverse coherence and identify governing parameters over a broad range of parameters. In particular we re-examine the well known emittance criterion for the undulator radiation, which states that full transverse coherence is guaranteed if the rms emittance is smaller than the wavelength divided by 4π. It is found that this criterion is modified for SASE because of the different optimization conditions required for the electron beam. Our analysis is a generalization of the previous study by Yu and Krinsky for the case of vanishing emittance with parallel electron beam. Understanding the transverse coherence of SASE is important for the X-ray free electron laser projects now under consideration at SLAC and DESY

Ultrafast gain dynamics in InAs/InGaAs quantum dot amplifiers

DEFF Research Database (Denmark)

Borri, Paola; Langbein, Wolfgang; Hvam, Jørn Märcher

2000-01-01

The ultrafast dynamics of gain and refractive index in an electrically pumped InAs-InGaAs quantum-dot (QD) optical amplifier are measured at room temperature using differential transmission with femtosecond time resolution. Both absorption and gain regions are investigated. While the absorption...

Low Voltage Current-Reused Pseudo-Differential Programmable Gain Amplifier

Science.gov (United States)

Nguyen, Huy-Hieu; Lee, Jeong-Seon; Lee, Sang-Gug

This paper reports a current-reused pseudo-differential (CRPD) programmable gain amplifier (PGA) that demonstrates small size, low power, wide band, low noise, and high linearity operation with 4 control bits. Implemented in 0.18um CMOS technology, the PGA shows the gain range from -9.9 to 8.3dB with gain error of less than ±0.38dB. The IIP3, P1dB, and smallest 3-dB bandwidth are 10.5 to 27dBm, -9 to 9.5dBm, and 250MHz, respectively. The PGA occupies the chip area of 0.04mm2 and consumes only 460 µA from a 1.2V supply.

Design of a high-gain laser diode-array pumped Nd:YAG Alternating Precessive Slab Amplifier (APS-Amplifier)

Science.gov (United States)

Coyle, D. Barry

1991-01-01

In the design of space qualifiable laser systems for ranging and altimetry, such as NASA's Geodynamic Laser Ranging System (GLRS), the transmitter must be kept small, powerful yet efficient, and must consist of as few components as possible. A novel preamplifier design is examined which requires no external beam steering optics, yielding a compact component with simple alignment procedures. The gains achieved are comparable to multipass zigzag amplifiers using two or more sets of external optics for extra passes through the amplifying medium.

Design of a high-gain laser diode-array pumped Nd:YAG alternating precessive slab amplifier (APS amplifier)

Science.gov (United States)

Coyle, D. B.

1991-01-01

In the design of space-qualifiable laser systems for ranging and altimetry, such as NASA's Geodynamic Laser Ranging System (GLRS), the transmitter must be kept small, powerful yet efficient, and must consist of as few components as possible. A novel preamplifier design is examined which requires no external beam steering optics, yielding a compact component with simple alignment procedures. The gains achieved are comparable to multipass zigzag amplifiers using two or more sets of external optics for extra passes through the amplifying medium.

Phase and gain measurements in a distributed-loss cyclotron-resonance maser amplifier

International Nuclear Information System (INIS)

Kesar, Amit; Jerby, Eli

2002-01-01

The control of gain and phase delay in a cyclotron-resonance maser (CRM) amplifier is essential for a variety of applications. In this experiment, the gain and phase-delay variations are measured with respect to controlling parameters; the electron-beam current and the axial magnetic field. Following Chu et al. [Phys. Rev. Lett. 74, 1103 (1995)], the CRM amplifier comprises of a distributed-loss waveguide to enable high gain without oscillations. Our experiment yields an amplification up to 26 dB, and a phase-delay control range of 360 deg. In order to keep a fixed gain with the varying phase delay, the two controlling parameters (i.e., the solenoid field and the beam current) are operated together in a compensating mode. The experiment is conducted in a frequency of 7.3 GHz, with an electron beam of 18-kV voltage and 0.25-0.4-A current. The experimental results are compared with a theoretical model. Practical implementations of gain and phase control in CRM devices are discussed

Mode control in a high gain relativistic klystron amplifier with 3 GW output power

Science.gov (United States)

Wu, Yang; Xie, Hong-Quan; Xu, Zhou

2014-01-01

Higher mode excitation is very serious in the relativistic klystron amplifier, especially for the high gain relativistic amplifier working at tens of kilo-amperes. The mechanism of higher mode excitation is explored in the PIC simulation and it is shown that insufficient separation of adjacent cavities is the main cause of higher mode excitation. So RF lossy material mounted on the drift tube wall is adopted to suppress higher mode excitation. A high gain S-band relativistic klystron amplifier is designed for the beam current of 13 kA and the voltage of 1 MV. PIC simulation shows that the output power is 3.2 GW when the input power is only 2.8 kW.

Design of a Programmable Gain, Temperature Compensated Current-Input Current-Output CMOS Logarithmic Amplifier.

Science.gov (United States)

Ming Gu; Chakrabartty, Shantanu

2014-06-01

This paper presents the design of a programmable gain, temperature compensated, current-mode CMOS logarithmic amplifier that can be used for biomedical signal processing. Unlike conventional logarithmic amplifiers that use a transimpedance technique to generate a voltage signal as a logarithmic function of the input current, the proposed approach directly produces a current output as a logarithmic function of the input current. Also, unlike a conventional transimpedance amplifier the gain of the proposed logarithmic amplifier can be programmed using floating-gate trimming circuits. The synthesis of the proposed circuit is based on the Hart's extended translinear principle which involves embedding a floating-voltage source and a linear resistive element within a translinear loop. Temperature compensation is then achieved using a translinear-based resistive cancelation technique. Measured results from prototypes fabricated in a 0.5 μm CMOS process show that the amplifier has an input dynamic range of 120 dB and a temperature sensitivity of 230 ppm/°C (27 °C- 57°C), while consuming less than 100 nW of power.

A CMOS Integrating Amplifier for the PHENIX Ring Imaging Cherenkov detector

International Nuclear Information System (INIS)

Wintenberg, A.L.; Jones, J.P. Jr.; Young, G.R.; Moscone, C.G.

1997-11-01

A CMOS integrating amplifier has been developed for use in the PHENIX Ring Imaging Cherenkov (RICH) detector. The amplifier, consisting of a charge-integrating amplifier followed by a variable gain amplifier (VGA), is an element of a photon measurement system comprising a photomultiplier tube, a wideband, gain of 10 amplifier, the integrating amplifier, and an analog memory followed by an ADC and double correlated sampling implemented in software. The integrating amplifier is designed for a nominal full scale input of 160 pC with a gain of 20 mV/pC and a dynamic range of 1000:1. The VGA is used for equalizing gains prior to forming analog sums for trigger purposes. The gain of the VGA is variable over a 3:1 range using a 5 bits digital control, and the risetime is held to approximately 20 ns using switched compensation in the VGA. Details of the design and results from several prototype devices fabricated in 1.2 microm Orbit CMOS are presented. A complete noise analysis of the integrating amplifier and the correlated sampling process is included as well as a comparison of calculated, simulated and measured results

A CMOS Integrating Amplifier for the PHENIX Ring Imaging Cherenkov detector

Energy Technology Data Exchange (ETDEWEB)

Wintenberg, A.L.; Jones, J.P. Jr.; Young, G.R. [Oak Ridge National Lab., TN (United States); Moscone, C.G. [Tennessee Univ., Knoxville, TN (United States)

1997-11-01

A CMOS integrating amplifier has been developed for use in the PHENIX Ring Imaging Cherenkov (RICH) detector. The amplifier, consisting of a charge-integrating amplifier followed by a variable gain amplifier (VGA), is an element of a photon measurement system comprising a photomultiplier tube, a wideband, gain of 10 amplifier, the integrating amplifier, and an analog memory followed by an ADC and double correlated sampling implemented in software. The integrating amplifier is designed for a nominal full scale input of 160 pC with a gain of 20 mV/pC and a dynamic range of 1000:1. The VGA is used for equalizing gains prior to forming analog sums for trigger purposes. The gain of the VGA is variable over a 3:1 range using a 5 bits digital control, and the risetime is held to approximately 20 ns using switched compensation in the VGA. Details of the design and results from several prototype devices fabricated in 1.2 {micro}m Orbit CMOS are presented. A complete noise analysis of the integrating amplifier and the correlated sampling process is included as well as a comparison of calculated, simulated and measured results.

Energy-efficient relay selection and optimal power allocation for performance-constrained dual-hop variable-gain AF relaying

KAUST Repository

Zafar, Ammar; Radaydeh, Redha Mahmoud Mesleh; Chen, Yunfei; Alouini, Mohamed-Slim

2013-01-01

This paper investigates the energy-efficiency enhancement of a variable-gain dual-hop amplify-and-forward (AF) relay network utilizing selective relaying. The objective is to minimize the total consumed power while keeping the end-to-end signal

Gain measurement in a CW medium-power diode pumped Nd:YAG laser amplifier by ASE analysis

International Nuclear Information System (INIS)

Razzaghi, D; Hajiesmaeilbaigi, F; Ruzbehani, M

2014-01-01

Using the relation between amplified spontaneous emission intensity and gain, a set of formulas is derived for gain evaluation by comparing fluorescence yield in two different lengths of the active medium. Experimental measurements are carried out and gain is calculated by solving the derived formula. For comparison, measurements are also carried out using the probe beam method, which shows good agreement between the two methods in a typical CW medium-power diode pumped Nd:YAG amplifier. (paper)

Impact of gain saturation on the mode instability threshold in high-power fiber amplifiers

DEFF Research Database (Denmark)

Hansen, Kristian Rymann; Lægsgaard, Jesper

2014-01-01

We present a coupled-mode model of transverse mode instability in high-power fiber amplifiers, which takes the effect of gain saturation into account. The model provides simple semi-analytical formulas for the mode instability threshold, which are valid also for highly saturated amplifiers...

Small-signal gain spectrum of an 1800-torr CO2 amplifier

International Nuclear Information System (INIS)

Goldstein, J.C.; Haglund, R.F. Jr.; Comly, J.

1981-01-01

Prominent hot band effects have been observed in the 9.4 and 10.6 μm gain spectrum of an 1800 torr electron-beam-controlled-discharge CO 2 laser amplifier. Theoretical calculations agree well with data at 53 wavelengths

Modeling of Semiconductor Optical Amplifier Gain Characteristics for Amplification and Switching

Science.gov (United States)

Mahad, Farah Diana; Sahmah, Abu; Supa'at, M.; Idrus, Sevia Mahdaliza; Forsyth, David

2011-05-01

The Semiconductor Optical Amplifier (SOA) is presently commonly used as a booster or pre-amplifier in some communication networks. However, SOAs are also a strong candidate for utilization as multi-functional elements in future all-optical switching, regeneration and also wavelength conversion schemes. With this in mind, the purpose of this paper is to simulate the performance of the SOA for improved amplification and switching functions. The SOA is modeled and simulated using OptSim software. In order to verify the simulated results, a MATLAB mathematical model is also used to aid the design of the SOA. Using the model, the gain difference between simulated and mathematical results in the unsaturated region is <1dB. The mathematical analysis is in good agreement with the simulation result, with only a small offset due to inherent software limitations in matching the gain dynamics of the SOA.

Radially resolved simulation of a high-gain free electron laser amplifier

International Nuclear Information System (INIS)

Fawley, W.M.; Prosnitz, D.; Doss, S.; Gelinas, R.

1983-01-01

The results of a two-dimensional simulation of a high-gain free electron laser (FEL) amplifier is presented. The simulation solves the inhomogeneous paraxial wave equation. The source term is radially resolved and is obtained by tracking the interaction of the laser field with localized macroparticles

In-circuit-measurement of parasitic elements in high gain high bandwidth low noise transimpedance amplifiers.

Science.gov (United States)

Cochems, P; Kirk, A; Zimmermann, S

2014-12-01

Parasitic elements play an important role in the development of every high performance circuit. In the case of high gain, high bandwidth transimpedance amplifiers, the most important parasitic elements are parasitic capacitances at the input and in the feedback path, which significantly influence the stability, the frequency response, and the noise of the amplifier. As these parasitic capacitances range from a few picofarads down to only a few femtofarads, it is nearly impossible to measure them accurately using traditional LCR meters. Unfortunately, they also cannot be easily determined from the transfer function of the transimpedance amplifier, as it contains several overlapping effects and its measurement is only possible when the circuit is already stable. Therefore, we developed an in-circuit measurement method utilizing minimal modifications to the input stage in order to measure its parasitic capacitances directly and with unconditional stability. Furthermore, using the data acquired with this measurement technique, we both proposed a model for the complicated frequency response of high value thick film resistors as they are used in high gain transimpedance amplifiers and optimized our transimpedance amplifier design.

Gain recovery dynamics and limitations in quantum dot amplifiers

DEFF Research Database (Denmark)

Berg, Tommy Winther; Bischoff, Svend; Magnúsdóttir, Ingibjörg

2001-01-01

gain recovery in a quantum dot amplifier, and it is thus not yet clear what the limiting processes for the device response are. We present the results of a comprehensive theoretical model, which agrees well with the experimental results, and indicates the importance of slow recovery of higher energy...... levels. The model used is of the rate-equation type with three energy levels: ground state (GS) and excited state (ES) dot levels and a wetting layer...

Optimization of E r-density profile for efficient pumping and high signal gain in Erbium-doped fiber amplifiers

International Nuclear Information System (INIS)

Arzi, E.; Hassani, A.; Esmaili Seraji, F.

2000-01-01

Recently, the Erbium-Doped Fiber Amplifier has been shown to have a great potentiality in Fiber-Optics Communication. A model is suggested for calculating the E r-density profile, using the propagation and rate equations of a homogeneous two-level laser medium in Erbium-Doped Fiber Amplifier, such that efficient pumping and high signal gain is achieved for different fiber waveguide structure. The result of this numerical calculation shows that the gain, compared with the gain of the existing Erbium-Doped Fiber Amplifier, is higher by a factor of 3.5. This model is applicable in all active waveguides and any other dopant as well

Low-Gain, Low-Noise Integrated Neuronal Amplifier for Implantable Artifact-Reduction Recording System

Directory of Open Access Journals (Sweden)

Abdelhamid Benazzouz

2013-09-01

Full Text Available Brain neuroprostheses for neuromodulation are being designed to monitor the neural activity of the brain in the vicinity of the region being stimulated using a single macro-electrode. Using a single macro-electrode, recent neuromodulation studies show that recording systems with a low gain neuronal amplifier and successive amplifier stages can reduce or reject stimulation artifacts. These systems were made with off-the-shelf components that are not amendable for future implant design. A low-gain, low-noise integrated neuronal amplifier (NA with the capability of recording local field potentials (LFP and spike activity is presented. In vitro and in vivo characterizations of the tissue/electrode interface, with equivalent impedance as an electrical model for recording in the LFP band using macro-electrodes for rodents, contribute to the NA design constraints. The NA occupies 0.15 mm2 and dissipates 6.73 µW, and was fabricated using a 0.35 µm CMOS process. Test-bench validation indicates that the NA provides a mid-band gain of 20 dB and achieves a low input-referred noise of 4 µVRMS. Ability of the NA to perform spike recording in test-bench experiments is presented. Additionally, an awake and freely moving rodent setup was used to illustrate the integrated NA ability to record LFPs, paving the pathway for future implantable systems for neuromodulation.

High gain semiconductor optical amplifier — Laser diode at visible wavelength

KAUST Repository

Shen, Chao; Lee, Changmin; Ng, Tien Khee; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2017-01-01

We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

High gain semiconductor optical amplifier — Laser diode at visible wavelength

KAUST Repository

Shen, Chao

2017-02-07

We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

Photonic-band-gap gyrotron amplifier with picosecond pulses

Science.gov (United States)

Nanni, Emilio A.; Jawla, Sudheer; Lewis, Samantha M.; Shapiro, Michael A.; Temkin, Richard J.

2017-12-01

We report the amplification of 250 GHz pulses as short as 260 ps without observation of pulse broadening using a photonic-band-gap circuit gyrotron traveling-wave-amplifier. The gyrotron amplifier operates with a device gain of 38 dB and an instantaneous bandwidth of 8 GHz. The operational bandwidth of the amplifier can be tuned over 16 GHz by adjusting the operating voltage of the electron beam and the magnetic field. The amplifier uses a 30 cm long photonic-band-gap interaction circuit to confine the desired TE03-like operating mode while suppressing lower order modes which can result in undesired oscillations. The circuit gain is >55 dB for a beam voltage of 23 kV and a current of 700 mA. These results demonstrate the wide bandwidths and a high gain achievable with gyrotron amplifiers. The amplification of picosecond pulses of variable lengths, 260-800 ps, shows good agreement with the theory using the coupled dispersion relation and the gain-spectrum of the amplifier as measured with quasi-CW input pulses.

Low-Gain, Low-Noise Integrated Neuronal Amplifier for Implantable Artifact-Reduction Recording System

OpenAIRE

Zbrzeski, Adeline; Lewis, Noëlle; Rummens, Francois; Jung, Ranu; N'Kaoua, Gilles; Benazzouz, Abdelhamid; Renaud, Sylvie

2013-01-01

Brain neuroprostheses for neuromodulation are being designed to monitor the neural activity of the brain in the vicinity of the region being stimulated using a single macro-electrode. Using a single macro-electrode, recent neuromodulation studies show that recording systems with a low gain neuronal amplifier and successive amplifier stages can reduce or reject stimulation artifacts. These systems were made with off-the-shelf components that are not amendable for future implant design. A low-g...

Design of switched-capacitor filter circuits using low gain amplifiers

CERN Document Server

Serra, Hugo Alexandre de Andrade

2015-01-01

This book describes the design of switched-capacitor filter circuits using low gain amplifiers and demonstrates some techniques that can minimize the effects of parasitic capacitances during the design phase. Focus is given in the design of low-pass and band-pass SC filters, and how higher order filters can be achieved using cascaded biquadratic filter sections. The authors also describe a low voltage implementation of a low-pass SC filter.

A megajoule class krypton fluoride amplifier for single shot, high gain ICF application

International Nuclear Information System (INIS)

Rose, E.; Hanson, D.; Krohn, B.; McLeod, J.; Kang, M.

1988-01-01

A design study is underway to define the optimal architecture for a KrF laser system which will deliver 10 MJ of 248-nm light to an ICF target. We present one approach which incorporates final power amplifiers in the megajoule class, achieving 10 MJ with four final amplifiers. Each double-pass laser amplifier employs two-sided electron-beam pumping of the laser gas medium. Details of the design are based on a Monte-Carlo electron-beam deposition code, a one-dimensional, time-dependent kinetics code, and pulsed power circuit modeling. Linear dimensions of the amplifier's extracted gain volume are 6.25 m in height and length and 5.12 m in width. Each amplifier handles 160 angularly multiplexed laser channels. The one-amagat, krypton-rich laser medium is e-beam pumped at 60-kW cm/sup /minus/3/ (4-MA at3.3-MV) over the 2-microsecond duration of the laser beam pulse train. 5 refs., 4 figs

Gain transient control for wavelength division multiplexed access networks using semiconductor optical amplifiers

DEFF Research Database (Denmark)

Gibbon, Timothy Braidwood; Osadchiy, Alexey Vladimirovich; Kjær, Rasmus

2009-01-01

Gain transients can severely hamper the upstream network performance in wavelength division multiplexed (WDM) access networks featuring erbium doped fiber amplifiers (EDFAs) or Raman amplification. We experimentally demonstrate for the first time using 10 Gb/s fiber transmission bit error rate...... measurements how a near-saturated semiconductor optical amplifier (SOA) can be used to control these gain transients. An SOA is shown to reduce the penalty of transients originating in an EDFA from 2.3 dB to 0.2 dB for 10 Gb/s transmission over standard single mode fiber using a 231-1 PRBS pattern. The results...... suggest that a single SOA integrated within a WDM receiver at the metro node could offer a convenient all-optical solution for upstream transient controlin WDM access networks....

Pump-to-Signal Intensity Modulation Transfer in Saturated- Gain Fiber Optical Parametric Amplifiers

DEFF Research Database (Denmark)

Lali-Dastjerdi, Zohreh; Lund-Hansen, Toke; Rottwitt, Karsten

2011-01-01

The pump-to-signal intensity modulation transfer in saturated degenerate FOPAs is numerically investigated over the whole gain bandwidth. The intensity modulation transfer decreases and the OSNR improves when the amplifier operates in the saturation regime....

A High Gain-Bandwidth Product Distributed Transimpedance Amplifier IC for High-Speed Optical Transmission Using Low-Cost GaAs Technology.

OpenAIRE

Giannini, F.; Limiti, E.; Orengo, G.; Serino, A.; De Dominicis, M.

2002-01-01

This paper reports a distributed baseband transimpedance amplifier for optical links up to 10 Gb/s. The amplifier operates as a baseband amplifier with a transimpedance gain of 48 dB Ω and a DC-to-9 GHz bandwidth. Some innovative design techniques to improve gain-bandwidth performance at low and high frequency with an available low-cost GaAs MESFET technology have been developed.

Predictive Variable Gain Iterative Learning Control for PMSM

Directory of Open Access Journals (Sweden)

Huimin Xu

2015-01-01

Full Text Available A predictive variable gain strategy in iterative learning control (ILC is introduced. Predictive variable gain iterative learning control is constructed to improve the performance of trajectory tracking. A scheme based on predictive variable gain iterative learning control for eliminating undesirable vibrations of PMSM system is proposed. The basic idea is that undesirable vibrations of PMSM system are eliminated from two aspects of iterative domain and time domain. The predictive method is utilized to determine the learning gain in the ILC algorithm. Compression mapping principle is used to prove the convergence of the algorithm. Simulation results demonstrate that the predictive variable gain is superior to constant gain and other variable gains.

Wideband and flat-gain amplifier based on high concentration erbium-doped fibres in parallel double-pass configuration

International Nuclear Information System (INIS)

Hamida, B A; Cheng, X S; Harun, S W; Naji, A W; Arof, H; Al-Khateeb, W; Khan, S; Ahmad, H

2012-01-01

A wideband and flat gain erbium-doped fibre amplifier (EDFA) is demonstrated using a hybrid gain medium of a zirconiabased erbium-doped fibre (Zr-EDF) and a high concentration erbium-doped fibre (EDF). The amplifier has two stages comprising a 2-m-long ZEDF and 9-m-long EDF optimised for C- and L-band operations, respectively, in a double-pass parallel configuration. A chirp fibre Bragg grating (CFBG) is used in both stages to ensure double propagation of the signal and thus to increase the attainable gain in both C- and L-band regions. At an input signal power of 0 dBm, a flat gain of 15 dB is achieved with a gain variation of less than 0.5 dB within a wide wavelength range from 1530 to 1605 nm. The corresponding noise figure varies from 6.2 to 10.8 dB within this wavelength region.

A Carbon Nanotube-based NEMS Parametric Amplifier for Enhanced Radio Wave Detection and Electronic Signal Amplification

Energy Technology Data Exchange (ETDEWEB)

Aleman, B J; Sussman, A; Zettl, A [Physics Department, University of California, Berkeley, CA 94720 (United States); Mickelson, W, E-mail: azettl@berkeley.edu [Center of Integrated Nanomechanical Systems, University of California, Berkeley, CA 94720 (United States)

2011-07-20

We propose a scheme for a parametric amplifier based on a single suspended carbon nanotube field-emitter. This novel electromechanical nanotube device acts as a phase-sensitive, variable-gain, band-pass-filtering amplifier for electronic signal processing and, at the same time, can operate as a variable-sensitivity, tuneable detector and transducer of radio frequency electromagnetic waves. The amplifier can exhibit infinite gain at pumping voltages much less than 10 Volts. Additionally, the amplifier's low overhead power consumption (10-1000 nW) make it exceptionally attractive for ultra-low-power applications.

A Carbon Nanotube-based NEMS Parametric Amplifier for Enhanced Radio Wave Detection and Electronic Signal Amplification

International Nuclear Information System (INIS)

Aleman, B J; Sussman, A; Zettl, A; Mickelson, W

2011-01-01

We propose a scheme for a parametric amplifier based on a single suspended carbon nanotube field-emitter. This novel electromechanical nanotube device acts as a phase-sensitive, variable-gain, band-pass-filtering amplifier for electronic signal processing and, at the same time, can operate as a variable-sensitivity, tuneable detector and transducer of radio frequency electromagnetic waves. The amplifier can exhibit infinite gain at pumping voltages much less than 10 Volts. Additionally, the amplifier's low overhead power consumption (10-1000 nW) make it exceptionally attractive for ultra-low-power applications.

Amplifying and compressing optical filter based on one-dimensional ternary photonic crystal structure containing gain medium

Science.gov (United States)

Jamshidi-Ghaleh, Kazem; Ebrahimpour, Zeinab; Moslemi, Fatemeh

2015-07-01

The transmission spectrum properties of the one-dimensional ternary photonic crystal (1DTPC) structure, composed of dielectric (D), metal (M) and gain (G) materials, with three different arrangements of (DGM)N, (GDM)N and (DMG)N, where N is the number of periodicity, were investigated. Two full photonic band gaps and N-1 resonant peaks, localized between them, were observed on transmittance spectra on near-UV spectrum region. When the gained layer was placed in front of the metal, the peaks appeared with higher resolution. There is a peak, localized on the higher band-edge of the first gap, which shows very interesting property than the other peaks. Thus, it amplifies and compresses faster with increase in the N and strength of the gain coefficient. The effects of the gain coefficient and periodicity number are graphically illustrated. This communication presents a PC structure that can be a good candidate to design an amplifying and compressing single or multi-channel optical filter in the UV region.

Fast iterative technique for the calculation of frequency dependent gain in excimer laser amplifiers

International Nuclear Information System (INIS)

Sze, R.C.

1991-01-01

The motivation in initiating these calculations is to allow us to observe the frequency evolution of a laser pulse as it propagates through an amplifier and then through a sequence of amplifiers. The question we seek to answer is what pulse shape do we need to produce out of a front-end oscillator so that after it propagates through the whole Aurora KrF fusion amplifier chain will result in high energy, broad-band laser fields of a given bandwidth that can be focussed onto a fusion target. The propagation of a single frequency source through an amplifier with distributed loss was considered by Rigrod and was significantly expanded by Hunter and Hunter. The latter included amplified spontaneous emission [ASE] considerations both in the direction of and transverse to the coherent field. Analytic solutions that include forward and backward prapagating fields and ASE were derived which were transcendental in nature but allowed for fairly easy computer calculations. Transverse ASE were calculated using the unsaturated gain resulting from longitudinal fields and were used to compare this with the longitudinal field equations. Large computer programs are now available at LANL which include the influence of transverse ASE on the longitudinal fields. However, none of these considerations have worried about the changes in the frequency characteristics of the propagating field or of how each of the frequency field components contributes to the saturation of the gain. The inclusion of full frequency characteristics to the analytic solutions of Hunter and Hunter proved impossible at least for this author and a new calculational technique was developed and is the subject of this talk

Femtosecond Ti:sapphire cryogenic amplifier with high gain and MHz repetition rate

DEFF Research Database (Denmark)

Dantan, Aurelien Romain; Laurat, Julien; Ourjoumtsev, Alexei

2007-01-01

We demonstrate high gain amplification of 160-femtosecond pulses in a compact double-pass cryogenic Ti:sapphire amplifier. The setup involves a negative GVD mirrors recompression stage, and operates with a repetition rate between 0.2 and 4 MHz with a continuous pump laser. Amplification factors a...... as high as 17 and 320 nJ Fourier-limited pulses are obtained at a 800 kHz repetition rate....

Design of a low noise distributed amplifier with adjustable gain control in 0.15 μm GaAs PHEMT

International Nuclear Information System (INIS)

Zhang Ying; Wang Zhigong; Xu Jian; Luo Yin

2012-01-01

A low noise distributed amplifier consisting of 9 gain cells is presented. The chip is fabricated with 0.15-μm GaAs pseudomorphic high electron mobility transistor (PHEMT) technology from Win Semiconductor of Taiwan. A special optional gate bias technique is introduced to allow an adjustable gain control range of 10 dB. A novel cascode structure is adopted to extend the output voltage and bandwidth. The measurement results show that the amplifier gives an average gain of 15 dB with a gain flatness of ±1 dB in the 2–20 GHz band. The noise figure is between 2 and 4.1 dB during the band from 2 to 20 GHz. The amplifier also provides 13.8 dBm of output power at a 1 dB gain compression point and 10.5 dBm of input third order intercept point (IIP3), which demonstrates the excellent performance of linearity. The power consumption is 300 mW with a supply of 5 V, and the chip area is 2.36 × 1.01 mm 2 . (semiconductor integrated circuits)

High-gain (43 dB), high-power (40 W), highly efficient multipass amplifier at 995 nm in Yb:LiYF4

Science.gov (United States)

Manni, Jeffrey; Harris, Dennis; Fan, Tso Yee

2018-06-01

A simple implementation of a multipass amplifier along with the use of a cryogenic Yb:LiYF4 (YLF) gain medium has enabled the demonstration of a bulk amplifier with an unprecedented combination of large-signal gain (43 dB), efficiency (>50% optical), average output power (40 W) and a near-diffraction-limited output beam.

Frequency-asymmetric gain profile in a seeded Raman amplifier

International Nuclear Information System (INIS)

Repasky, K.S.; Carlsten, J.L.

1996-01-01

This paper examines the effect of index guiding on Raman gain. The slowly varying Maxwell wave equation including both the real and imaginary parts of the Raman susceptibility for a seeded Raman amplifier is explored. Using a Gauss-Laguerre mode expansion for the Stokes field, the output Stokes energy is numerically studied as a function of gain and detuning from the Raman resonance. The calculations indicate that the real part of the Raman susceptibility causes the Raman medium to act as a lens when the Stokes seed is detuned from the Raman resonance. This focusing effect leads to higher peak Stokes energy when the Stokes seed is tuned to the blue side of the Raman resonance. Specifically for Raman scattering in H 2 with a pump laser at 532 nm and an input seed near 683 nm, the peak Stokes energy can shift by as much as 300 MHz from the Raman resonance. An experiment which confirms these predictions is also presented. copyright 1996 The American Physical Society

Amplifying and compressing optical filter based on one-dimensional ternary photonic crystal structure containing gain medium

Energy Technology Data Exchange (ETDEWEB)

Jamshidi-Ghaleh, Kazem, E-mail: k-jamshidi@azaruinv.ac.ir [Department of Physics, Azarbaijan Shahid Madani University, Tabriz (Iran, Islamic Republic of); Ebrahimpour, Zeinab [Department of Physics, Shahid Beheshti University, Evin 19839 Tehran (Iran, Islamic Republic of); Moslemi, Fatemeh [Department of Physics, Azarbaijan Shahid Madani University, Tabriz (Iran, Islamic Republic of)

2015-07-15

The transmission spectrum properties of the one-dimensional ternary photonic crystal (1DTPC) structure, composed of dielectric (D), metal (M) and gain (G) materials, with three different arrangements of (DGM){sup N}, (GDM){sup N} and (DMG){sup N}, where N is the number of periodicity, were investigated. Two full photonic band gaps and N−1 resonant peaks, localized between them, were observed on transmittance spectra on near-UV spectrum region. When the gained layer was placed in front of the metal, the peaks appeared with higher resolution. There is a peak, localized on the higher band-edge of the first gap, which shows very interesting property than the other peaks. Thus, it amplifies and compresses faster with increase in the N and strength of the gain coefficient. The effects of the gain coefficient and periodicity number are graphically illustrated. This communication presents a PC structure that can be a good candidate to design an amplifying and compressing single or multi-channel optical filter in the UV region.

A new method for calibrating the current gain of 1013 Ω amplifiers in thermal ionization mass spectrometry.

Science.gov (United States)

Wang, Guiqin; Zeng, Yuling; Xu, Jifeng; Liu, Wengui

2018-03-09

We report a new method for calibrating the current gain of 10 13 Ω amplifiers in both positive and negative mode used in thermal ionisation mass spectrometry (TIMS). This method uses any isotopic standard or sample to calibrate the gain factor as long as it can produce a stable current signal. It is simpler and more flexible than that recommended by Thermo-Fisher (the manufacture of the TIMS). In these analyses, the gains of five 10 13 Ω amplifiers were assessed. The precision of gain factors was better than 100 ppm (2 RSD) in a day, and the long term reproducibility was better than 300 ppm (2 RSD) within 2 - 8 months. After a gain was calibrated, the ratio accuracy and precision in the positive mode for 87 Sr/ 88 Sr of NIST 987 Sr and 143 Nd/ 144 Nd of La Jolla Nd were 0.710242 ± 60 (2 SD, n = 14) and 0.511842 ± 10 (2 SD, n = 22), respectively, at intensities of 88 Sr 0.3 V and 142 Nd 0.4 V, while in the negative mode for 187 Os/ 188 Os of Merck Os was 0.120229± 34 (2 SD, n = 23) at an intensity of 187 OsO 3 0.01 mV. In addition, a difference in the gain factors between the negative mode TIMS (NTIMS) and positive mode TIMS (PTIMS) has been recognized. The values of the gain factor for NTIMS and PTIMS show a deviation of 0.54% on the Triton and 0.31% on the Triton Plus TIMS in this study; therefore, gain calibration should be carried out on both NTIMS and PTIMS. Moreover, a bias of ~ 1.5×10 -5 between H and L Faraday cups for the same 10 13 Ω amplifier has been detected, hinting that the efficiency of different Faraday cups may affect the gain factors, which can be eliminated through the new method of "cross-calibration" discribed in this study. This article is protected by copyright. All rights reserved.

MOS current gain cells with electronically variable gain and constant bandwidth

NARCIS (Netherlands)

Klumperink, Eric A.M.; Seevinck, Evert

1989-01-01

Two MOS current gain cells are proposed that provide linear amplification of currents supplied by several linear MOS V-I converters. The gain is electronically variable by a voltage or a current and can be made insensitive to temperature and IC processing. The gain cells have a constant

Ultrafast Gain Dynamics in Quantum Dot Amplifiers: Theoretical Analysis and Experimental Investigations

DEFF Research Database (Denmark)

Poel, Mike van der; Gehrig, Edeltraud; Hess, Ortwin

2005-01-01

Ultrafast gain dynamics in an optical amplifier with an active layer of self-organized quantum dots (QDs) emitting near 1.3$muhbox m$is characterized experimentally in a pump-probe experiment and modeled theoretically on the basis of QD Maxwell–Bloch equations. Experiment and theory are in good......$factor) is theoretically predicted and demonstrated in the experiments. The fundamental analysis reveals the underlying physical processes and indicates limitations to QD-based devices....

Steady-state pulses and superradiance in short-wavelength, swept-gain amplifiers

International Nuclear Information System (INIS)

Bonifacio, R.; Hopf, F.A.; Meystre, P.; Scully, M.O.

1975-01-01

The steady-state behavior of amplifiers in which the excitation is swept at the speed of light is discussed in the semiclassical approximation. In the present work the case where the decay time of the population is comparable to that of the polarization is examined. Pulse propagation is shown to obey a generalized sine-Gordon equation which contains the effects of atomic relaxations. The analytical expression of the steady-state pulses (SSP) gives two threshold conditions. In the region of limited gain the SSP is a broad pulse with small area which can be obtained by small signal theory. In the second region of high gain the SSP is the superradiant π pulse. Its pulse power is not limited as in usual superradiant theory because, as is shown, for a swept excitation the cooperation-length limit does not exist

An S-band high gain relativistic klystron amplifier with high phase stability

Energy Technology Data Exchange (ETDEWEB)

Wu, Y. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Science and Technology on High Power Microwave Laboratory, Mianyang 621900 (China); Li, Z. H.; Xu, Z.; Ma, Q. S. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Xie, H. Q. [College of Science, Southwestern University of Science and Technology, Mianyang 621010 (China)

2014-11-15

For the purpose of coherent high power microwave combining, an S-band high gain relativistic klystron amplifier with high phase stability is presented and studied. By the aid of 3D particle-in-cell code and circuit simulation software, the mechanism of parasitic oscillation in the device is investigated. And the RF lossy material is adopted in the simulation and experiment to suppress the oscillation. The experimental results show that with an input RF power of 10 kW, a microwave pulse with power of 1.8 GW is generated with a gain of 52.6 dB. And the relative phase difference fluctuation between output microwave and input RF signal is less than ±10° in 90 ns.

Adaptive Neuro-Fuzzy Based Gain Controller for Erbium-Doped Fiber Amplifiers

Directory of Open Access Journals (Sweden)

YUCEL, M.

2017-02-01

Full Text Available Erbium-doped fiber amplifiers (EDFA must have a flat gain profile which is a very important parameter such as wavelength division multiplexing (WDM and dense WDM (DWDM applications for long-haul optical communication systems and networks. For this reason, it is crucial to hold a stable signal power per optical channel. For the purpose of overcoming performance decline of optical networks and long-haul optical systems, the gain of the EDFA must be controlled for it to be fixed at a high speed. In this study, due to the signal power attenuation in long-haul fiber optic communication systems and non-equal signal amplification in each channel, an automatic gain controller (AGC is designed based on the adaptive neuro-fuzzy inference system (ANFIS for EDFAs. The intelligent gain controller is implemented and the performance of this new electronic control method is demonstrated. The proposed ANFIS-based AGC-EDFA uses the experimental dataset to produce the ANFIS-based sets and the rule base. Laser diode currents are predicted within the accuracy rating over 98 percent with the proposed ANFIS-based system. Upon comparing ANFIS-based AGC-EDFA and experimental results, they were found to be very close and compatible.

Energy-Efficient Power Allocation for Fixed-Gain Amplify-and-Forward Relay Networks with Partial Channel State Information

KAUST Repository

Zafar, Ammar; Alouini, Mohamed-Slim; Chen, Yunfei; Radaydeh, Redha M.

2012-01-01

In this letter, energy-efficient transmission and power allocation for fixed-gain amplify-and-forward relay networks with partial channel state information (CSI) are studied. In the energy-efficiency problem, the total power consumed is minimized

Continuous-wave infrared optical gain and amplified spontaneous emission at ultralow threshold by colloidal HgTe quantum dots.

Science.gov (United States)

Geiregat, Pieter; Houtepen, Arjan J; Sagar, Laxmi Kishore; Infante, Ivan; Zapata, Felipe; Grigel, Valeriia; Allan, Guy; Delerue, Christophe; Van Thourhout, Dries; Hens, Zeger

2018-01-01

Colloidal quantum dots (QDs) raise more and more interest as solution-processable and tunable optical gain materials. However, especially for infrared active QDs, optical gain remains inefficient. Since stimulated emission involves multifold degenerate band-edge states, population inversion can be attained only at high pump power and must compete with efficient multi-exciton recombination. Here, we show that mercury telluride (HgTe) QDs exhibit size-tunable stimulated emission throughout the near-infrared telecom window at thresholds unmatched by any QD studied before. We attribute this unique behaviour to surface-localized states in the bandgap that turn HgTe QDs into 4-level systems. The resulting long-lived population inversion induces amplified spontaneous emission under continuous-wave optical pumping at power levels compatible with solar irradiation and direct current electrical pumping. These results introduce an alternative approach for low-threshold QD-based gain media based on intentional trap states that paves the way for solution-processed infrared QD lasers and amplifiers.

Continuous-wave infrared optical gain and amplified spontaneous emission at ultralow threshold by colloidal HgTe quantum dots

Science.gov (United States)

Geiregat, Pieter; Houtepen, Arjan J.; Sagar, Laxmi Kishore; Infante, Ivan; Zapata, Felipe; Grigel, Valeriia; Allan, Guy; Delerue, Christophe; van Thourhout, Dries; Hens, Zeger

2018-01-01

Colloidal quantum dots (QDs) raise more and more interest as solution-processable and tunable optical gain materials. However, especially for infrared active QDs, optical gain remains inefficient. Since stimulated emission involves multifold degenerate band-edge states, population inversion can be attained only at high pump power and must compete with efficient multi-exciton recombination. Here, we show that mercury telluride (HgTe) QDs exhibit size-tunable stimulated emission throughout the near-infrared telecom window at thresholds unmatched by any QD studied before. We attribute this unique behaviour to surface-localized states in the bandgap that turn HgTe QDs into 4-level systems. The resulting long-lived population inversion induces amplified spontaneous emission under continuous-wave optical pumping at power levels compatible with solar irradiation and direct current electrical pumping. These results introduce an alternative approach for low-threshold QD-based gain media based on intentional trap states that paves the way for solution-processed infrared QD lasers and amplifiers.

Gain dynamics in p-doped InGaAs quantum dot amplifiers from room to cryogenic temperatures

NARCIS (Netherlands)

Borri, P.; Cesaria, V.; Rossetti, M.; Fiore, A.; Langbein, W.

2009-01-01

We have compared the gain dynamics of the ground state excitonic transition between undoped and p-doped electrically-pumped InGaAs quantum-dot optical amplifiers, for temperatures from 300K to 20K. A pump-probe differential transmission technique in heterodyne detection with sub-picosecond time

Efficient design of gain-flattened multi-pump Raman fiber amplifiers using least squares support vector regression

Science.gov (United States)

Chen, Jing; Qiu, Xiaojie; Yin, Cunyi; Jiang, Hao

2018-02-01

An efficient method to design the broadband gain-flattened Raman fiber amplifier with multiple pumps is proposed based on least squares support vector regression (LS-SVR). A multi-input multi-output LS-SVR model is introduced to replace the complicated solving process of the nonlinear coupled Raman amplification equation. The proposed approach contains two stages: offline training stage and online optimization stage. During the offline stage, the LS-SVR model is trained. Owing to the good generalization capability of LS-SVR, the net gain spectrum can be directly and accurately obtained when inputting any combination of the pump wavelength and power to the well-trained model. During the online stage, we incorporate the LS-SVR model into the particle swarm optimization algorithm to find the optimal pump configuration. The design results demonstrate that the proposed method greatly shortens the computation time and enhances the efficiency of the pump parameter optimization for Raman fiber amplifier design.

CMOS Current-mode Operational Amplifier

OpenAIRE

Kaulberg, Thomas

1992-01-01

A fully differential-input differential-output current-mode operational amplifier (COA) is described. The amplifier utilizes three second generation current-conveyors (CCII) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain bandwidth product of 8 MHz, an offset current of 0.8 ¿A (signal-r...

Instrumentation amplifier implements second-order active low-pass filter with high gain factor

International Nuclear Information System (INIS)

Blomqvist, Kim H; Eskelinen, Pekka; Sepponen, Raimo E

2011-01-01

A single-ended second-order active low-pass filter can simultaneously provide high gain factor and dc voltage subtraction. This makes it possible to reduce the number of components and signal processing stages needed in an application where small voltage changes are measured on the top of large dc voltage masked by a large amplitude oscillating carrier. The filter described in this paper is constructed from a conventional 3-op-amp instrumentation amplifier and five passive circuit elements. (technical design note)

CMOS Current-mode Operational Amplifier

DEFF Research Database (Denmark)

Kaulberg, Thomas

1992-01-01

current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain bandwidth product of 8 MHz, an offset current of 0.8 ¿A (signal-range ±700¿A) and a (theoretically) unlimited slew-rate. The amplifier is realized in a standard CMOS 2......A fully differential-input differential-output current-mode operational amplifier (COA) is described. The amplifier utilizes three second generation current-conveyors (CCII) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...

Noiseless Linear Amplifiers in Entanglement-Based Continuous-Variable Quantum Key Distribution

Directory of Open Access Journals (Sweden)

Yichen Zhang

2015-06-01

Full Text Available We propose a method to improve the performance of two entanglement-based continuous-variable quantum key distribution protocols using noiseless linear amplifiers. The two entanglement-based schemes consist of an entanglement distribution protocol with an untrusted source and an entanglement swapping protocol with an untrusted relay. Simulation results show that the noiseless linear amplifiers can improve the performance of these two protocols, in terms of maximal transmission distances, when we consider small amounts of entanglement, as typical in realistic setups.

Dressed Gain from the Parametrically Amplified Four-Wave Mixing Process in an Atomic Vapor

Science.gov (United States)

Zhang, Zhaoyang; Wen, Feng; Che, Junling; Zhang, Dan; Li, Changbiao; Zhang, Yanpeng; Xiao, Min

2015-10-01

With a forward cone emitting from the strong pump laser in a thermal rubidium atomic vapor, we investigate the non-degenerate parametrically amplified four-wave mixing (PA-FWM) process with dressing effects in a three-level “double-Λ” configuration both theoretically and experimentally. By seeding a weak probe field into the Stokes or anti-Stokes channel of the FWM, the gain processes are generated in the bright twin beams which are called conjugate and probe beams, respectively. However, the strong dressing effect of the pump beam will dramatically affect the gain factors both in the probe and conjugate channels, and can inevitably impose an influence on the quantum effects such as entangled degree and the quantum noise reduction between the two channels. We systematically investigate the intensity evolution of the dressed gain processes by manipulating the atomic density, the Rabi frequency and the frequency detuning. Such dressing effects are also visually evidenced by the observation of Autler-Townes splitting of the gain peaks. The investigation can contribute to the development of quantum information processing and quantum communications.

On the performance of hybrid ARQ with incremental redundancy over amplify-and-forward dual-hop relay networks

KAUST Repository

Hadjtaieb, Amir; Chelli, Ali; Alouini, Mohamed-Slim

2014-01-01

overhears the transmitted message, amplifies it using a variable gain amplifier, and then forwards the message to the destination. This latter combines both the source and the relay message and tries to decode the information. In case of decoding failure

Amplified spontaneous emission and laser emission from a high optical-gain medium of dye-doped dendrimer

International Nuclear Information System (INIS)

Yokoyama, Shiyoshi; Nakahama, Tatsuo; Mashiko, Shinro

2005-01-01

We measured the amplified spontaneous emission and laser emission from high-gain media of laser-dye encapsulated dendrimers. A highly branched poly(amidoamine) (PAMAM-OH) dendrimer formed a guest-host complex with a conventional laser-dye (DCM), resulting in a high optical-gain. Of particular note was the appearance of a laser threshold, above which a super-narrowed laser spectrum was observed, although laser feedback was caused without any mirror cavity devices. The optical feedback was attributed to spatial confinement of the light due to gain guiding under optical excitation. The laser spectrum clearly indicated a resonant laser-mode with a spectrum linewidth of less than 0.1 nm. This order of spectrum narrowing is comparable to that seen in the laser emission from ordinary laser devices

Using MEMS Capacitive Switches in Tunable RF Amplifiers

Directory of Open Access Journals (Sweden)

Danson John

2006-01-01

Full Text Available A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA operating at GHz and GHz, and a tunable power amplifier (PA at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB noise figure. MEMS switches are used to implement a variable matching network that allows the PA to realize up to 37% PAE improvement at low input powers.

A pulse amplifier for nuclear instrumentation

International Nuclear Information System (INIS)

Martin, D.; Cliff, P.

1987-01-01

A Class-A 1 Watt amplifier has been designed and optimized for nanosecond pulses. Spanning .01MHz to 1300Mhz, signal gain is 26dB with gain flatness of 1dB. The amplifier drive +- 10 volts across 500 with 350ps risetime. Each amplifier is housed in a 2-wide NIM

A high power gain switched diode laser oscillator and amplifier for the CEBAF polarized electron injector

International Nuclear Information System (INIS)

Poelker, M.; Hansknecht, J.

1996-01-01

The photocathode in the polarized electron source at Jefferson Lab is illuminated with pulsed laser light from a gain switched diode laser and diode optical amplifier. Laser pulse repetition rates up to 2,000 MHz, optical pulsewidths between 31 and 123 ps, and average power > 100 mW are demonstrated. The laser system is highly reliable and completely remotely controlled

A CMOS current-mode operational amplifier

DEFF Research Database (Denmark)

Kaulberg, Thomas

1993-01-01

current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain-bandwidth product of 3 MHz, an offset current of 0.8 μA (signal range ±700 μA), and a (theoretically) unlimited slew rate. The amplifier is realized in a standard CMOS 2......A fully differential-input, differential-output, current-mode operational amplifier (COA) is described. The amplifier utilizes three second-generation current conveyors (CCIIs) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced...

Improvement of two-way continuous-variable quantum key distribution using optical amplifiers

International Nuclear Information System (INIS)

Zhang, Yi-Chen; Yu, Song; Gu, Wanyi; Li, Zhengyu; Sun, Maozhu; Peng, Xiang; Guo, Hong; Weedbrook, Christian

2014-01-01

The imperfections of a receiver's detector affect the performance of two-way continuous-variable (CV) quantum key distribution (QKD) protocols and are difficult to adjust in practical situations. We propose a method to improve the performance of two-way CV-QKD by adding a parameter-adjustable optical amplifier at the receiver. A security analysis is derived against a two-mode collective entangling cloner attack. Our simulations show that the proposed method can improve the performance of protocols as long as the inherent noise of the amplifier is lower than a critical value, defined as the tolerable amplifier noise. Furthermore, the optimal performance can approach the scenario where a perfect detector is used. (paper)

All-optical pulse data generation in a semiconductor optical amplifier gain controlled by a reshaped optical clock injection

Science.gov (United States)

Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

2006-05-01

Wavelength-maintained all-optical pulse data pattern transformation based on a modified cross-gain-modulation architecture in a strongly gain-depleted semiconductor optical amplifier (SOA) is investigated. Under a backward dark-optical-comb injection with 70% duty-cycle reshaping from the received data clock at 10GHz, the incoming optical data stream is transformed into a pulse data stream with duty cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. The high-pass filtering effect of the gain-saturated SOA greatly improves the extinction ratio of data stream by 8dB and reduces its bit error rate to 10-12 at -18dBm.

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

International Nuclear Information System (INIS)

Zheng Jia-Xin; Ma Xiao-Hua; Zhang Hong-He; Zhang Meng; Hao Yue; Lu Yang; Zhao Bo-Chao; Cao Meng-Yi

2015-01-01

A C-band high efficiency and high gain two-stage power amplifier based on AlGaN/GaN high electron mobility transistor (HEMT) is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency (PAE) are determined at the fundamental and 2nd harmonic frequency (f 0 and 2f 0 ). The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5.4 GHz–5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15% and an associated power gain of 28.7 dB, which is an outstanding performance. (paper)

Semiconductor quantum-dot lasers and amplifiers

DEFF Research Database (Denmark)

Hvam, Jørn Märcher; Borri, Paola; Ledentsov, N. N.

2002-01-01

-power surface emitting VCSELs. We investigated the ultrafast dynamics of quantum-dot semiconductor optical amplifiers. The dephasing time at room temperature of the ground-state transition in semiconductor quantum dots is around 250 fs in an unbiased amplifier, decreasing to below 50 fs when the amplifier...... is biased to positive net gain. We have further measured gain recovery times in quantum dot amplifiers that are significantly lower than in bulk and quantum-well semiconductor optical amplifiers. This is promising for future demonstration of quantum dot devices with high modulation bandwidth...

Challenges in higher order mode Raman amplifiers

DEFF Research Database (Denmark)

Rottwitt, Karsten; Nielsen, Kristian; Friis, Søren Michael Mørk

2015-01-01

A higher order Raman amplifier model that take random mode coupling into account ispresented. Mode dependent gain and signal power fluctuations at the output of the higher order modeRaman amplifier are discussed......A higher order Raman amplifier model that take random mode coupling into account ispresented. Mode dependent gain and signal power fluctuations at the output of the higher order modeRaman amplifier are discussed...

Gain characteristics of a saturated fiber optic parametric amplifier

DEFF Research Database (Denmark)

Rottwitt, Karsten; Lorenzen, Michael Rodas; Noordegraaf, Danny

2008-01-01

In this work we discuss saturation performance of a fiber optic parametric amplifier. A simple numerical model is described and applied to specific cases. A system experiment using a saturated amplifier illustrates a 4 dB improvement in required signal to noise ratio for a fixed bit error ratio....

A comprehensive study on gain stabilization of Er-doped fiber amplifier in C-band with uniform fiber Bragg grating-pair

Science.gov (United States)

Yang, Jiuru; Ma, Yu; OuYang, Yunlun; Liu, Chunyu; Zhang, Jiaxiao

2014-07-01

Fiber grating-pair is one of the efficient methods for gain stabilization of erbium doped fiber amplifier (EDFA) but with a gain-reduction of signals, especially in C-band. In order to overcome it, in this article, we establish a configuration of EDFA based uniform fiber grating-pair and conduct a comprehensive study on gain stabilization by varying the reflectivity, center wavelength and 3dB bandwidth of grating, and by varying the channel number and pump power. The numerical results show that under the optimal parameters of grating the gain stabilization at 1550nm is +/-0.044dB with high gain and large dynamic range.

An AC modulated near infrared gain calibration system for a "Violin-Mode" transimpedance amplifier, intended for advanced LIGO suspensions

Science.gov (United States)

Lockerbie, N. A.; Tokmakov, K. V.

2016-07-01

The background to this work was a prototype shadow sensor, which was designed for retro-fitting to an advanced LIGO (Laser Interferometer Gravitational wave Observatory) test-mass/mirror suspension, in which a 40 kg test-mass/mirror is suspended by four approximately 600 mm long by 0.4 mm diameter fused-silica suspension fibres. The shadow sensor comprised a LED source of Near InfraRed (NIR) radiation, and a "tall-thin" rectangular silicon photodiode detector, which together were to bracket the fibre under test. The photodiode was positioned so as to be sensitive (primarily) to transverse "Violin-Mode" vibrations of such a fibre, via the oscillatory movement of the shadow cast by the fibre, as this moved across the face of the detector. In this prototype shadow sensing system the photodiode was interfaced to a purpose-built transimpedance amplifier, this having both AC and DC outputs. A quasi-static calibration was made of the sensor's DC responsivity, i.e., incremental rate of change of output voltage versus fibre position, by slowly scanning a fused-silica fibre sample transversely through the illuminating beam. The work reported here concerns the determination of the sensor's more important AC (Violin-Mode) responsivity. Recognition of the correspondence between direct AC modulation of the source, and actual Violin-Mode signals, and of the transformative role of the AC/DC gain ratio for the amplifier, at any modulation frequency, f, resulted in the construction of the AC/DC calibration source described here. A method for determining in practice the transimpedance AC/DC gain ratio of the photodiode and amplifier, using this source, is illustrated by a specific numerical example, and the gain ratio for the prototype sensing system is reported over the frequency range 1 Hz-300 kHz. In fact, a maximum DC responsivity of 1.26 kV.m-1 was measured using the prototype photodiode sensor and amplifier discussed here. Therefore, the measured AC/DC transimpedance gain ratio

An AC modulated near infrared gain calibration system for a "Violin-Mode" transimpedance amplifier, intended for advanced LIGO suspensions.

Science.gov (United States)

Lockerbie, N A; Tokmakov, K V

2016-07-01

The background to this work was a prototype shadow sensor, which was designed for retro-fitting to an advanced LIGO (Laser Interferometer Gravitational wave Observatory) test-mass/mirror suspension, in which a 40 kg test-mass/mirror is suspended by four approximately 600 mm long by 0.4 mm diameter fused-silica suspension fibres. The shadow sensor comprised a LED source of Near InfraRed (NIR) radiation, and a "tall-thin" rectangular silicon photodiode detector, which together were to bracket the fibre under test. The photodiode was positioned so as to be sensitive (primarily) to transverse "Violin-Mode" vibrations of such a fibre, via the oscillatory movement of the shadow cast by the fibre, as this moved across the face of the detector. In this prototype shadow sensing system the photodiode was interfaced to a purpose-built transimpedance amplifier, this having both AC and DC outputs. A quasi-static calibration was made of the sensor's DC responsivity, i.e., incremental rate of change of output voltage versus fibre position, by slowly scanning a fused-silica fibre sample transversely through the illuminating beam. The work reported here concerns the determination of the sensor's more important AC (Violin-Mode) responsivity. Recognition of the correspondence between direct AC modulation of the source, and actual Violin-Mode signals, and of the transformative role of the AC/DC gain ratio for the amplifier, at any modulation frequency, f, resulted in the construction of the AC/DC calibration source described here. A method for determining in practice the transimpedance AC/DC gain ratio of the photodiode and amplifier, using this source, is illustrated by a specific numerical example, and the gain ratio for the prototype sensing system is reported over the frequency range 1 Hz-300 kHz. In fact, a maximum DC responsivity of 1.26 kV.m(-1) was measured using the prototype photodiode sensor and amplifier discussed here. Therefore, the measured AC/DC transimpedance gain

Gain tuning and fidelity in continuous-variable quantum teleportation

International Nuclear Information System (INIS)

Ide, Toshiki; Hofmann, Holger F.; Furusawa, Akira; Kobayashi, Takayoshi

2002-01-01

The fidelity of continuous-variable teleportation can be optimized by changing the gain in the modulation of the output field. We discuss the gain dependence of fidelity for coherent, vacuum, and one-photon inputs and propose optimal gain tuning strategies for corresponding input selections

Wideband multi-element Er-doped fiber amplifier

International Nuclear Information System (INIS)

Thipparapu, N K; Jain, S; May-Smith, T C; Sahu, J K

2014-01-01

A multi-element Er-doped fiber amplifier (MEEDFA) is demonstrated in which the gain profile is extended into the S and L bands. Each fiber element of the MEEDFA is found to provide a maximum gain of 37 dB and a noise figure of < 4 dB in the C-band. The gain profile of the amplifier is shifted towards longer wavelength by cascading fiber elements. The novel geometry of the multi-element fiber (MEF) could allow for the development of a broadband amplifier in a split-band configuration. The proposed amplifier can operate in the wavelength band of 1520 to 1595 nm (75 nm), with a minimum gain of 20 dB. (letter)

Spectral hole-burning and carrier-heating dynamics in quantum-dot amplifiers: Comparison with bulk amplifiers

DEFF Research Database (Denmark)

Borri, P.; Langbein, W.; Hvam, Jørn Märcher

2001-01-01

The ultrafast gain dynamics in an electrically pumped InAs/InGaAs/GaAs quantum-dot amplifier are measured at room temperature with femtosecond resolution, and compared with results on an InGaAsP bulk amplifier. The role of spectral hole burning and carrier heating in the recovery of the gain...

All-optical OR/NOR Bi-functional logic gate by using cross-gain modulation in semiconductor optical amplifiers

International Nuclear Information System (INIS)

Choi, Kyoung Sun; Byun, Young Tae; Lee, Seok; Jhon, Young Min

2010-01-01

An OR/NOR bi-functional all-optical logic gate has been experimentally demonstrated at 10 Gbit/s by using cross-gain modulation (XGM) in only 2 semiconductor optical amplifiers (SOAs). One SOA was used for NOR operation and the other SOA was used for inversion to obtain OR operation. Numerical simulation has also been performed, which coincided well with the experimental results.

Realization of OFCC based Transimpedance Mode Instrumentation Amplifier

Directory of Open Access Journals (Sweden)

Neeta Pandey

2016-01-01

Full Text Available The paper presents an instrumentation amplifier suitable for amplifying the current source transducer signals. It provides a voltage output. It has a high gain, common mode rejection ratio and gain independent bandwidth. It uses three Operational Floating Current Conveyors (OFCCs and four resistors. The effect of nonidealities of OFCC on performance of proposed transimpedance instrumentation amplifier (TIA is also analyzed. The proposal has been verified through SPICE simulations using CMOS based schematicThe paper presents an instrumentation amplifier suitable for amplifying the current source transducer signals. It provides a voltage output. It has a high gain, common mode rejection ratio and gain independent bandwidth. It uses three operational floating current conveyors (OFCCs and four resistors. The effect of nonidealities of OFCC on performance of proposed transimpedance instrumentation amplifier (TIA is also analyzed. The proposal has been verified through SPICE simulations using CMOS based schematic.

Dual-range linearized transimpedance amplifier system

Science.gov (United States)

Wessendorf, Kurt O.

2010-11-02

A transimpedance amplifier system is disclosed which simultaneously generates a low-gain output signal and a high-gain output signal from an input current signal using a single transimpedance amplifier having two different feedback loops with different amplification factors to generate two different output voltage signals. One of the feedback loops includes a resistor, and the other feedback loop includes another resistor in series with one or more diodes. The transimpedance amplifier system includes a signal linearizer to linearize one or both of the low- and high-gain output signals by scaling and adding the two output voltage signals from the transimpedance amplifier. The signal linearizer can be formed either as an analog device using one or two summing amplifiers, or alternately can be formed as a digital device using two analog-to-digital converters and a digital signal processor (e.g. a microprocessor or a computer).

Performance of a Combined System Using an X-Ray FEL Oscillator and a High-Gain FEL Amplifier

Energy Technology Data Exchange (ETDEWEB)

Gupta, L.; Lindberg, R.; Kim, K. -J.

2017-06-01

The LCLS-II at SLAC will feature a 4 GeV CW superconducting (SC) RF linac [1] that can potentially drive a 5th harmonic X-Ray FEL Oscillator (XFELO) to produce fully coherent, 1 MW photon pulses with a 5 meV bandwidth at 14.4 keV [2]. The XFELO output can serve as the input seed signal for a high-gain FEL amplifier employing fs electron beams from the normal conducting SLAC linac, thereby generating coherent, fs x-ray pulses with TW peak powers using a tapered undulator after saturation [3]. Coherent, intense output at several tens of keV will also be feasible if one considers a harmonic generation scheme. Thus, one can potentially reach the 42 keV photon energy required for the MaRIE project [4] by beginning with an XFELO operating at the 3rd harmonic to produce 14.0 keV photons using a 12 GeV SCRF linac, and then subsequently using the high-gain harmonic generation scheme to generate and amplify the 3th harmonic at 42 keV [5]. We report extensive GINGER simulations that determine an optimized parameter set for the combined system.

A programmable gain amplifier with a DC offset calibration loop for a direct-conversion WLAN transceiver

Energy Technology Data Exchange (ETDEWEB)

Lei Qianqian; Chen Zhiming [Department of Applied Electronics, Xi' an University of Technology, Xi' an 710048 (China); Lin Min; Shi Yin, E-mail: leiqianqian@163.com [Suzhou-CAS Semiconductors Integrated Technology Research Center, Suzhou 215021 (China)

2011-04-15

A high-linearity PGA (programmable gain amplifier) with a DC offset calibration loop is proposed. The PGA adopts a differential degeneration structure to vary voltage gain and uses the closed-loop structure including the input op-amps to enhance the linearity. A continuous time feedback based DC offset calibration loop is also designed to solve the DC offset problem. This PGA is fabricated by TSMC 0.13 {mu}m CMOS technology. The measurements show that the receiver PGA (RXPGA) provides a 64 dB gain range with a step of 1 dB, and the transmitter PGA (TXPGA) covers a 16 dB gain. The RXPGA consumes 18 mA and the TXPGA consumes 7 mA (I and Q path) under a 3.3 V supply. The bandwidth of the multi-stage PGA is higher than 20 MHz. In addition, the DCOC (DC offset cancellation) circuit shows 10 kHz of HPCF (high pass cutoff frequency) and the DCOC settling time is less than 0.45 {mu}s. (semiconductor integrated circuits)

An AC modulated near infrared gain calibration system for a “Violin-Mode” transimpedance amplifier, intended for advanced LIGO suspensions

International Nuclear Information System (INIS)

Lockerbie, N. A.; Tokmakov, K. V.

2016-01-01

The background to this work was a prototype shadow sensor, which was designed for retro-fitting to an advanced LIGO (Laser Interferometer Gravitational wave Observatory) test-mass/mirror suspension, in which a 40 kg test-mass/mirror is suspended by four approximately 600 mm long by 0.4 mm diameter fused-silica suspension fibres. The shadow sensor comprised a LED source of Near InfraRed (NIR) radiation, and a “tall-thin” rectangular silicon photodiode detector, which together were to bracket the fibre under test. The photodiode was positioned so as to be sensitive (primarily) to transverse “Violin-Mode” vibrations of such a fibre, via the oscillatory movement of the shadow cast by the fibre, as this moved across the face of the detector. In this prototype shadow sensing system the photodiode was interfaced to a purpose-built transimpedance amplifier, this having both AC and DC outputs. A quasi-static calibration was made of the sensor’s DC responsivity, i.e., incremental rate of change of output voltage versus fibre position, by slowly scanning a fused-silica fibre sample transversely through the illuminating beam. The work reported here concerns the determination of the sensor’s more important AC (Violin-Mode) responsivity. Recognition of the correspondence between direct AC modulation of the source, and actual Violin-Mode signals, and of the transformative role of the AC/DC gain ratio for the amplifier, at any modulation frequency, f, resulted in the construction of the AC/DC calibration source described here. A method for determining in practice the transimpedance AC/DC gain ratio of the photodiode and amplifier, using this source, is illustrated by a specific numerical example, and the gain ratio for the prototype sensing system is reported over the frequency range 1 Hz–300 kHz. In fact, a maximum DC responsivity of 1.26 kV.m"−"1 was measured using the prototype photodiode sensor and amplifier discussed here. Therefore, the measured AC

An AC modulated near infrared gain calibration system for a “Violin-Mode” transimpedance amplifier, intended for advanced LIGO suspensions

Energy Technology Data Exchange (ETDEWEB)

Lockerbie, N. A.; Tokmakov, K. V. [SUPA (Scottish Universities Physics Alliance) Department of Physics, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG (United Kingdom)

2016-07-15

The background to this work was a prototype shadow sensor, which was designed for retro-fitting to an advanced LIGO (Laser Interferometer Gravitational wave Observatory) test-mass/mirror suspension, in which a 40 kg test-mass/mirror is suspended by four approximately 600 mm long by 0.4 mm diameter fused-silica suspension fibres. The shadow sensor comprised a LED source of Near InfraRed (NIR) radiation, and a “tall-thin” rectangular silicon photodiode detector, which together were to bracket the fibre under test. The photodiode was positioned so as to be sensitive (primarily) to transverse “Violin-Mode” vibrations of such a fibre, via the oscillatory movement of the shadow cast by the fibre, as this moved across the face of the detector. In this prototype shadow sensing system the photodiode was interfaced to a purpose-built transimpedance amplifier, this having both AC and DC outputs. A quasi-static calibration was made of the sensor’s DC responsivity, i.e., incremental rate of change of output voltage versus fibre position, by slowly scanning a fused-silica fibre sample transversely through the illuminating beam. The work reported here concerns the determination of the sensor’s more important AC (Violin-Mode) responsivity. Recognition of the correspondence between direct AC modulation of the source, and actual Violin-Mode signals, and of the transformative role of the AC/DC gain ratio for the amplifier, at any modulation frequency, f, resulted in the construction of the AC/DC calibration source described here. A method for determining in practice the transimpedance AC/DC gain ratio of the photodiode and amplifier, using this source, is illustrated by a specific numerical example, and the gain ratio for the prototype sensing system is reported over the frequency range 1 Hz–300 kHz. In fact, a maximum DC responsivity of 1.26 kV.m{sup −1} was measured using the prototype photodiode sensor and amplifier discussed here. Therefore, the measured AC

Energy-efficient relay selection and optimal power allocation for performance-constrained dual-hop variable-gain AF relaying

KAUST Repository

Zafar, Ammar

2013-12-01

This paper investigates the energy-efficiency enhancement of a variable-gain dual-hop amplify-and-forward (AF) relay network utilizing selective relaying. The objective is to minimize the total consumed power while keeping the end-to-end signal-to-noise-ratio (SNR) above a certain peak value and satisfying the peak power constraints at the source and relay nodes. To achieve this objective, an optimal relay selection and power allocation strategy is derived by solving the power minimization problem. Numerical results show that the derived optimal strategy enhances the energy-efficiency as compared to a benchmark scheme in which both the source and the selected relay transmit at peak power. © 2013 IEEE.

Efficient power allocation for fixed-gain amplify-and-forward relaying in rayleigh fading

KAUST Repository

Zafar, Ammar

2013-06-01

In this paper, we study power allocation strategies for a fixed-gain amplify-and-forward relay network employing multiple relays. We consider two optimization problems for the relay network: 1) optimal power allocation to maximize the end-to-end signal-to-noise ratio (SNR) and 2) minimizing the total consumed power while maintaining the end-to-end SNR over a threshold value. We assume that the relays have knowledge of only the channel statistics of all the links. We show that the SNR maximization problem is concave and the power minimization problem is convex. Hence, we solve the problems through convex programming. Numerical results show the benefit of allocating power optimally rather than uniformly. © 2013 IEEE.

Improved-Bandwidth Transimpedance Amplifier

Science.gov (United States)

Chapsky, Jacob

2009-01-01

The widest available operational amplifier, with the best voltage and current noise characteristics, is considered for transimpedance amplifier (TIA) applications where wide bandwidth is required to handle fast rising input signals (as for time-of-flight measurement cases). The added amplifier inside the TIA feedback loop can be configured to have slightly lower voltage gain than the bandwidth reduction factor.

Design of an 1800nm Raman amplifier

DEFF Research Database (Denmark)

Svane, Ask Sebastian; Rottwitt, Karsten

2013-01-01

We present the experimental results for a Raman amplifier that operates at 1810 nm and is pumped by a Raman fiber laser at 1680 nm. Both the pump laser and the Raman amplifier is polarization maintaining. A challenge when scaling Raman amplifiers to longer wavelengths is the increase...... in transmission loss, but also the reduction in the Raman gain coefficient as the amplifier wavelength is increased. Both polarization components of the Raman gain is characterized, initially for linearly co-polarized signal and pump, subsequently linearly polarized orthogonal signal and pump. The noise...

An Implantable CMOS Amplifier for Nerve Signals

DEFF Research Database (Denmark)

Nielsen, Jannik Hammel; Lehmann, Torsten

2001-01-01

In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved. A continuous-time offset-compensation technique is utilized in order to minimize impact...... on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0.5 μm CMOS single poly, n-well process. The prototype amplifier features a gain of 80 dB over a 3.6 kHz bandwidth, a CMRR of more than 87 dB and a PSRR...

Experimental characteristics of a high-gain free-electron laser amplifier operating at 8-mm and 2-mm wavelengths

International Nuclear Information System (INIS)

Throop, A.L.; Orzechowski, T.J.; Anderson, B.R.

1987-01-01

The Electron Laser Facility (ELF) at the Lawrence Livermore National Laboratory (LLNL) uses a high-current induction linac (3.5 MeV, 1000 A), in conjunction with a pulsed electromagnetic wiggler (4.0 M, 4000 G), to operate a free electron laser (FEL) that produces intense radiation in the microwave regime (2 to 8 mm). ELF is a high-gain, single-pass amplifier, using a commercial microwave source as an oscillator input (200 W-50 kW). Previous experiments at 35 GHz produced exponential gains of 40 dB/m, peak powers exceeding 1 GW, and beam-to-rf conversion efficiencies of 34%. Recent experiments at 140 GHz have demonstrated exponential gains of 22 dB/m, peak powers exceeding 50 MW, and total gains of 65 dB. In this paper, we describe the experimental results at these two frequencies and compare then with the predictions of simulation codes

Gain measurements on a prototype NIF/LMJ amplifier pump cavity

International Nuclear Information System (INIS)

Rotter, M.D.; McCracken, R.; Erlandson, A.; Guenet, M.

1996-12-01

We are currently developing large-aperture amplifiers for the National Ignition Facility (NIF) and Laser Megajoules (LMJ) lasers. These multisegment amplifiers are of the flashlamp-pumped, Nd:Glass qW and are designed to propagate a nominally 36 cm square beam. The apertures within a particular amplifier bundle are arranged in a four-high by two-wide configuration and utilize two side lamp arrays and a central flashlamp array for pumping. The configuration is very similar to that used in the Beamlet laser, a single-beam prototype for the NIF/LMJ lasers, which has four apertures arranged in a two- high by two-wide configuration

Quantum-Limited Directional Amplifiers with Optomechanics

Science.gov (United States)

Malz, Daniel; Tóth, László D.; Bernier, Nathan R.; Feofanov, Alexey K.; Kippenberg, Tobias J.; Nunnenkamp, Andreas

2018-01-01

Directional amplifiers are an important resource in quantum-information processing, as they protect sensitive quantum systems from excess noise. Here, we propose an implementation of phase-preserving and phase-sensitive directional amplifiers for microwave signals in an electromechanical setup comprising two microwave cavities and two mechanical resonators. We show that both can reach their respective quantum limits on added noise. In the reverse direction, they emit thermal noise stemming from the mechanical resonators; we discuss how this noise can be suppressed, a crucial aspect for technological applications. The isolation bandwidth in both is of the order of the mechanical linewidth divided by the amplitude gain. We derive the bandwidth and gain-bandwidth product for both and find that the phase-sensitive amplifier has an unlimited gain-bandwidth product. Our study represents an important step toward flexible, on-chip integrated nonreciprocal amplifiers of microwave signals.

Ball-milled nano-colloids of rare-earth compounds as liquid gain media for capillary optical amplifiers and lasers

Science.gov (United States)

Patel, Darayas; Blockmon, Avery; Ochieng, Vanesa; Lewis, Ashley; Wright, Donald M.; Lewis, Danielle; Valentine, Rueben; Valentine, Maucus; Wesley, Dennis; Sarkisov, Sergey S.; Darwish, Abdalla M.; Sarkisov, Avedik S.

2017-02-01

Nano-colloids and nano-crystals doped with ions of rare-earth elements have recently attracted a lot of attention in the scientific community due to their potential applications as biomarkers, fluorescent inks, gain media for lasers and optical amplifiers. Many rare-earth doped materials of different compositions, shapes and size distribution have been prepared by different synthetic methods, such as chemical vapor deposition, sol-gel process, micro-emulsion techniques, gas phase condensation methods, hydrothermal methods and laser ablation. In this paper micro-crystalline powder of the rare-earthdoped compound NaYF4:Yb3+, Er3+ was synthesized using a simple wet process followed by baking in open air. Under 980 nm diode laser excitation strong fluorescence in the 100 nm band around 1531-nm peak was observed from the synthesized micro-powder. The micro-powder was pulverized using a ball mill and prepared in the form of nano-colloids in different liquids. The particle size of the obtained nano-colloids was measured using an atomic force microscope and a dynamic light scatterometer. The size of the nano-particles was close to 100-nm. The nano-colloids were utilized as a filling media in capillary optical amplifiers and lasers. The gain of a 7-cm-long capillary optical amplifier (150-micron inner diameter) was as high as 6 dB at 200 mW pump power. The synthesized nano-colloids and the active optical components using them can be potentially used in optical communication, signal processing, optical computing, and other applications.

Cusp Guns for Helical-Waveguide Gyro-TWTs of a High-Gain High-Power W-Band Amplifier Cascade

Science.gov (United States)

Manuilov, V. N.; Samsonov, S. V.; Mishakin, S. V.; Klimov, A. V.; Leshcheva, K. A.

2018-02-01

The evaluation, design, and simulations of two different electron guns generating the beams for W-band second cyclotron harmonic gyro-TWTs forming a high-gain powerful amplifier cascade are presented. The optimum configurations of the systems creating nearly axis-encircling electron beams having velocity pitch-factor up to 1.5, voltage/current of 40 kV/0.5 A, and 100 kV/13 A with acceptable velocity spreads have been found and are presented.

Receiver gain function: the actual NMR receiver gain

OpenAIRE

Mo, Huaping; Harwood, John S.; Raftery, Daniel

2010-01-01

The observed NMR signal size depends on the receiver gain parameter. We propose a receiver gain function to characterize how much the raw FID is amplified by the receiver as a function of the receiver gain setting. Although the receiver is linear for a fixed gain setting, the actual gain of the receiver may differ from what the gain setting suggests. Nevertheless, for a given receiver, we demonstrate that the receiver gain function can be calibrated. Such a calibration enables accurate compar...

High-gain Seeded FEL Amplifier Tunable in the Terahertz Range

CERN Document Server

Sung, C; Pellegrini, C; Ralph, J E; Reiche, S; Rosenzweig, J B; Tochitsky, Sergei Ya

2005-01-01

The lack of a high-power, relatively low-cost and compact terahertz (THz) source in the range 0.3-3x10(12) Hz is the major obstacle in progressing on biomedical and material studies at these wavelengths. A high-gain, single pass seeded FEL technique allows to obtain high power THz pulses of a high spectral brightness. We describe an ongoing project at the Neptune laboratory where a ~ 1kW seed pulse generated by difference frequency mixing of CO2 laser lines in a GaAs nonlinear crystal is injected into a waveguide FEL amplifier. The FEL is driven by a 5 ps (r.m.s) long electron pulse with a peak current up to 100A provided by a regular S-band photoinjector. According to 3-D, time dependent simulations, up to ~ 10 MW THz power can be generated using a 2 meter long planar undulator. By mixing different pairs of CO2 laser lines and matching resonant energy of the electron beam, tunability in the 100-400 mm range is expected. A tunable Fabri-Perot interferometer will be used to select a high-power 5ps THz pulse. T...

A high gain energy amplifier operated with fast neutrons

Energy Technology Data Exchange (ETDEWEB)

Rubbia, C. [CERN, Geneva (Switzerland)

1995-10-01

The basic concept and the main practical considerations of an Energy Amplifier (EA) have been exhaustively described elsewhere. Here the concept of the EA is further explored and additional schemes are described which offer a higher gain, a larger maximum power density and an extended burn-up. All these benefits stem from the use of fast neutrons, instead of thermal or epithermal ones, which was the case in the original study. The higher gain is due both to a more efficient high energy target configuration and to a larger, practical value of the multiplication factor. The higher power density results from the higher permissible neutron flux, which in turn is related to the reduced rate of {sup 233}Pa neutron captures (which, as is well known, suppress the formation of the fissile {sup 233}U fuel) and the much smaller k variations after switch-off due to {sup 233}Pa decays for a given burn-up rate. Finally a longer integrated burn-up is made possible by reduced capture rate by fission fragments of fast neutrons. In practice a 20 MW proton beam (20 mA @ 1 GeV) accelerated by a cyclotron will suffice to operate a compact EA at the level of {approx} 1 GW{sub e}. The integrated fuel burn-up can be extended in excess of 100 GW d/ton, limited by the mechanical survival of the fuel elements. Radio-Toxicity accumulated at the end of the cycle is found to be largely inferior to the one of an ordinary Reactor for the same energy produced. Schemes are proposed which make a {open_quotes}melt-down{close_quotes} virtually impossible. The conversion ratio, namely the rate of production of {sup 233}U relative to consumption is generally larger than unity, which permits production of fuel for other uses. Alternatively the neutron excess can be used to transform unwanted {open_quotes}ashes{close_quotes} into more acceptable elements.

Gain dynamics and saturation in semiconductor quantum dot amplifiers

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper; Hvam, Jørn Märcher

2004-01-01

Quantum dot (QD)-based semiconductor optical amplifiers offer unique properties compared with conventional devices based on bulk or quantum well material. Due to the bandfilling properties of QDs and the existence of a nearby reservoir of carriers in the form of a wetting layer, QD semiconductor...... optical amplifiers may be operated in regimes of high linearity, i.e. with a high saturation power, but can also show strong and fast nonlinearities by breaking the equilibrium between discrete dot states and the continuum of wetting layer states. In this paper, we analyse the interplay of these two...

Enhancing the efficiency of constrained dual-hop variable-gain AF relaying under nakagami-m fading

KAUST Repository

Zafar, Ammar

2014-07-01

This paper studies power allocation for performance constrained dual-hop variable-gain amplify-and-forward (AF) relay networks in Nakagami- $m$ fading. In this context, the performance constraint is formulated as a constraint on the end-to-end signal-to-noise-ratio (SNR) and the overall power consumed is minimized while maintaining this constraint. This problem is considered under two different assumptions of the available channel state information (CSI) at the relays, namely full CSI at the relays and partial CSI at the relays. In addition to the power minimization problem, we also consider the end-to-end SNR maximization problem under a total power constraint for the partial CSI case. We provide closed-form solutions for all the problems which are easy to implement except in two cases, namely selective relaying with partial CSI for power minimization and SNR maximization, where we give the solution in the form of a one-variable equation which can be solved efficiently. Numerical results are then provided to characterize the performance of the proposed power allocation algorithms considering the effects of channel parameters and CSI availability. © 2014 IEEE.

OFDM AF Variable Gain Relay System for the Next Generation Mobile Cellular

Directory of Open Access Journals (Sweden)

E. Kocan

2012-06-01

Full Text Available In this paper we present analytical performance evaluation of a dual-hop OFDM amplify-andforward (AF variable gain (VG relay system implementing ordered subcarrier mapping (SCM at the relay station (R, considered to be a very interesting solution for the next generation mobile cellular networks. A scenario with no direct communication between the source of information (S and destination terminal (D, with the Rayleigh fading statistics on both hops is assumed. A closed form analytical expression for the bit error rate (BER performance of the considered system with DPSK modulation is derived, while for its ergodic capacity performance, a tight upper bound expression is obtained. The accuracy of the undertaken analytical approach is confirmed through comparison with simulation results. It is shown that significant capacity enhancement can be achieved through SCM implementation at R, for all the signal-to-noise ratio (SNR values on both hops, but especially in the region of small SNRs on hops. BER analysis reveals that in the region of small and medium average SNRs on both hops BER performance may also be improved with SCM at R station.

HIGH AVERAGE POWER OPTICAL FEL AMPLIFIERS

International Nuclear Information System (INIS)

2005-01-01

Historically, the first demonstration of the optical FEL was in an amplifier configuration at Stanford University [l]. There were other notable instances of amplifying a seed laser, such as the LLNL PALADIN amplifier [2] and the BNL ATF High-Gain Harmonic Generation FEL [3]. However, for the most part FELs are operated as oscillators or self amplified spontaneous emission devices. Yet, in wavelength regimes where a conventional laser seed can be used, the FEL can be used as an amplifier. One promising application is for very high average power generation, for instance FEL's with average power of 100 kW or more. The high electron beam power, high brightness and high efficiency that can be achieved with photoinjectors and superconducting Energy Recovery Linacs (ERL) combine well with the high-gain FEL amplifier to produce unprecedented average power FELs. This combination has a number of advantages. In particular, we show that for a given FEL power, an FEL amplifier can introduce lower energy spread in the beam as compared to a traditional oscillator. This properly gives the ERL based FEL amplifier a great wall-plug to optical power efficiency advantage. The optics for an amplifier is simple and compact. In addition to the general features of the high average power FEL amplifier, we will look at a 100 kW class FEL amplifier is being designed to operate on the 0.5 ampere Energy Recovery Linac which is under construction at Brookhaven National Laboratory's Collider-Accelerator Department

Unconditionally stable microwave Si-IMPATT amplifiers

International Nuclear Information System (INIS)

Seddik, M.M.

1986-07-01

The purpose of this investigation has been the development of an improved understanding of the design and analysis of microwave reflection amplifiers employing the negative resistance property of the IMPATT devices. Unconditionally stable amplifier circuit using a Silicon IMPATT diode is designed. The problems associated with the design procedures and the stability criterion are discussed. A computer program is developed to perform the computations. The stable characteristics of a reflection-type Si-IMPATT amplifier, such as gain, frequency and bandwidth are examined. It was found that at large signal drive levels, 7 dB gain with bandwidth of 800 MHz at 22,5 mA was obtained. (author)

Application of automatic gain control for radiometer diagnostic in SST-1 tokamak.

Science.gov (United States)

Makwana, Foram R; Siju, Varsha; Edappala, Praveenlal; Pathak, S K

2017-12-01

This paper describes the characterisation of a negative feedback type of automatic gain control (AGC) circuit that will be an integral part of the heterodyne radiometer system operating at a frequency range of 75-86 GHz at SST-1 tokamak. The developed AGC circuit is a combination of variable gain amplifier and log amplifier which provides both gain and attenuation typically up to 15 dB and 45 dB, respectively, at a fixed set point voltage and it has been explored for the first time in tokamak radiometry application. The other important characteristics are that it exhibits a very fast response time of 390 ns to understand the fast dynamics of electron cyclotron emission and can operate at very wide input RF power dynamic range of around 60 dB that ensures signal level within the dynamic range of the detection system.

NASA developments in solid state power amplifiers

Science.gov (United States)

Leonard, Regis F.

1990-01-01

Over the last ten years, NASA has undertaken an extensive program aimed at development of solid state power amplifiers for space applications. Historically, the program may be divided into three phases. The first efforts were carried out in support of the advanced communications technology satellite (ACTS) program, which is developing an experimental version of a Ka-band commercial communications system. These first amplifiers attempted to use hybrid technology. The second phase was still targeted at ACTS frequencies, but concentrated on monolithic implementations, while the current, third phase, is a monolithic effort that focusses on frequencies appropriate for other NASA programs and stresses amplifier efficiency. The topics covered include: (1) 20 GHz hybrid amplifiers; (2) 20 GHz monolithic MESFET power amplifiers; (3) Texas Instruments' (TI) 20 GHz variable power amplifier; (4) TI 20 GHz high power amplifier; (5) high efficiency monolithic power amplifiers; (6) GHz high efficiency variable power amplifier; (7) TI 32 GHz monolithic power amplifier performance; (8) design goals for Hughes' 32 GHz variable power amplifier; and (9) performance goals for Hughes' pseudomorphic 60 GHz power amplifier.

Continuous-variable Measurement-device-independent Quantum Relay Network with Phase-sensitive Amplifiers

Science.gov (United States)

Li, Fei; Zhao, Wei; Guo, Ying

2018-01-01

Continuous-variable (CV) measurement-device-independent (MDI) quantum cryptography is now heading towards solving the practical problem of implementing scalable quantum networks. In this paper, we show that a solution can come from deploying an optical amplifier in the CV-MDI system, aiming to establish a high-rate quantum network. We suggest an improved CV-MDI protocol using the EPR states coupled with optical amplifiers. It can implement a practical quantum network scheme, where the legal participants create the secret correlations by using EPR states connecting to an untrusted relay via insecure links and applying the multi-entangled Greenberger-Horne-Zeilinger (GHZ) state analysis at relay station. Despite the possibility that the relay could be completely tampered with and imperfect links are subject to the powerful attacks, the legal participants are still able to extract a secret key from network communication. The numerical simulation indicates that the quantum network communication can be achieved in an asymmetric scenario, fulfilling the demands of a practical quantum network. Furthermore, we show that the use of optical amplifiers can compensate the inherent imperfections and improve the secret key rate of the CV-MDI system.

Computer-Aided Design of Microstrip GaAs Mesfet Amplifiers

DEFF Research Database (Denmark)

Nielsen, Niels Ole

1976-01-01

Results on computer-aided design of broadband GaAs MESFET amplifiers in microstrip is presented. The analysis of an amplifier is based on measured scattering parameters and a model of the microstrip structure, which includes parasitics and junction effects. The optimized performance of one stage...... amplifiers with lossless distributed matching elements is presented. Realized amplifiers are in good agreement with the theory. One stage amplifiers with a 1 ¿m FET in chip form exhibit 5.8 dB of gain in the range 8-12 GHz, while a gain of 4.5 dB from 4-8 GHz has been obtained with a packaged 1 ¿m FET....

Note: A high dynamic range, linear response transimpedance amplifier.

Science.gov (United States)

Eckel, S; Sushkov, A O; Lamoreaux, S K

2012-02-01

We have built a high dynamic range (nine decade) transimpedance amplifier with a linear response. The amplifier uses junction-gate field effect transistors (JFETs) to switch between three different resistors in the feedback of a low input bias current operational amplifier. This allows for the creation of multiple outputs, each with a linear response and a different transimpedance gain. The overall bandwidth of the transimpedance amplifier is set by the bandwidth of the most sensitive range. For our application, we demonstrate a three-stage amplifier with transimpedance gains of approximately 10(9)Ω, 3 × 10(7)Ω, and 10(4)Ω with a bandwidth of 100 Hz.

Electronically Tunable Transimpedance Instrumentation Amplifier Based on OTRA

Directory of Open Access Journals (Sweden)

Rajeshwari Pandey

2013-01-01

Full Text Available Operational transresistance amplifier (OTRA is the most suitable analog building block (ABB for transimpedance type signal processing due to its very nature of current input and voltage output. In this paper, OTRA-based transimpedance instrumentation amplifier (TIA is presented. It provides high differential gain and bandwidth, which is independent of gain. It also offers high common-mode rejection ratio (CMRR. The amplifier gain can be controlled electronically by implementing resistors using MOS transistors operating in linear region. The circuit can be made fully integrated. The proposed circuit is insensitive to parasitic input capacitances and input resistances due to the internally grounded input terminals of OTRA. Theoretical analysis is verified through PSPICE simulations and experimentation.

Amplified OTDR Systems for Multipoint Corrosion Monitoring

Science.gov (United States)

Nascimento, Jehan F.; Silva, Marcionilo J.; Coêlho, Isnaldo J. S.; Cipriano, Eliel; Martins-Filho, Joaquim F.

2012-01-01

We present two configurations of an amplified fiber-optic-based corrosion sensor using the optical time domain reflectometry (OTDR) technique as the interrogation method. The sensor system is multipoint, self-referenced, has no moving parts and can measure the corrosion rate several kilometers away from the OTDR equipment. The first OTDR monitoring system employs a remotely pumped in-line EDFA and it is used to evaluate the increase in system reach compared to a non-amplified configuration. The other amplified monitoring system uses an EDFA in booster configuration and we perform corrosion measurements and evaluations of system sensitivity to amplifier gain variations. Our experimental results obtained under controlled laboratory conditions show the advantages of the amplified system in terms of longer system reach with better spatial resolution, and also that the corrosion measurements obtained from our system are not sensitive to 3 dB gain variations. PMID:22737017

Design and Modeling of RF Power Amplifiers with Radial Basis Function Artificial Neural Networks

OpenAIRE

Ali Reza Zirak; Sobhan Roshani

2016-01-01

A radial basis function (RBF) artificial neural network model for a designed high efficiency radio frequency class-F power amplifier (PA) is presented in this paper. The presented amplifier is designed at 1.8 GHz operating frequency with 12 dB of gain and 36 dBm of 1dB output compression point. The obtained power added efficiency (PAE) for the presented PA is 76% under 26 dBm input power. The proposed RBF model uses input and DC power of the PA as inputs variables and considers output power a...

Multiple excitation regenerative amplifier inertial confinement system

International Nuclear Information System (INIS)

George, V.E.; Haas, R.A.; Krupke, W.F.; Schlitt, L.G.

1980-01-01

The invention relates to apparatus and methods for producing high intensity laser radiation generation which is achieved through an optical amplifier-storage ring design. One or two synchronized, counterpropagating laser pulses are injected into a regenerative amplifier cavity and amplified by gain media which are pumped repetitively by electrical or optical means. The gain media excitation pulses are tailored to efficiently amplify the laser pulses during each transit. After the laser pulses have been amplified to the desired intensity level, they are either switched out of the cavity by some switch means, as for example an electro-optical device, for any well known laser end uses, or a target means may be injected into the regenerative amplifier cavity in such a way as to intercept simultaneously the counterpropagating laser pulses. One such well known end uses to which this invention is intended is for production of high density and temperature plasmas suitable for generating neutrons, ions and x-rays and for studying matter heated by high intensity laser radiation

Realisations of single-resistance-controlled quadrature oscillators using a generalised current follower transconductance amplifier and a unity-gain voltage-follower

OpenAIRE

Herencsár, Norbert; Vrba, Kamil; Koton, Jaroslav; Lahiri, Abhirup

2010-01-01

This article presents realisations of single-resistance-controlled-oscillators (SRCOs) using the recently proposed modern active building block (ABB), namely the generalised current follower transconductance amplifier (GCFTA) and unity-gain voltage-follower (UGVF). The SRCO is made using reduced number of components: one GCFTA and one UGVF as the ABBs, two resistors and two grounded capacitors. The circuit offers the advantage of non-interactive control of condition of oscillation and frequen...

A numerical design approach for single amplifier, Active-RC Butterworth filter of order 5

DEFF Research Database (Denmark)

Gaunholt, Hans

2007-01-01

filter applying just one operational amplifier coupled as a unity gain amplifier. It is shown that the influence from the real operational amplifier may be reduced by trimming just one resistor in the circuit. The unity gain amplifiers have the advantage of providing low power consumption, yielding...

An Implantable CMOS Amplifier for Nerve Signals

DEFF Research Database (Denmark)

Nielsen, Jannik Hammel; Lehmann, Torsten

2003-01-01

In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. The amplifier is constructed in a fully differential topology to maximize noise rejection. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved....... A continuous-time current-steering offset-compensation technique is utilized in order to minimize the noise contribution and to minimize dynamic impact on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0...

Dielectric waveguide amplifiers and lasers

NARCIS (Netherlands)

Pollnau, Markus

The performance of semiconductor amplifiers and lasers has made them the preferred choice for optical gain on a micro-chip. In the past few years, we have demonstrated that also rare-earth-ion-doped dielectric waveguides show remarkable performance, ranging from a small-signal gain per unit length

CARM and harmonic gyro-amplifier experiments at 17 GHz

International Nuclear Information System (INIS)

Menninger, W.L.; Danly, B.G.; Alberti, S.; Chen, C.; Rullier, J.L.; Temkin, R.J.

1993-01-01

Cyclotron resonance maser amplifiers are possible sources for applications such as electron cyclotron resonance heating of fusion plasmas and driving high-gradient rf linear accelerators. For accelerator drivers, amplifiers or phase locked-oscillators are required. A 17 GHz cyclotron autoresonance maser (CARM) amplifier experiment and a 17 GHz third harmonic gyro-amplifier experiment are presently underway at the MIT Plasma Fusion Center. Using the SRL/MIT SNOMAD II introduction accelerator to provide a 380 kV, 180 A, 30 ns flat top electron beam, the gyro-amplifier experiment has produced 5 MW of rf power with over 50 dB of gain at 17 GHz. The gyro-amplifier operates in the TE 31 mode using a third harmonic interaction. Because of its high power output, the gyro-amplifier will be used as the rf source for a photocathode rf electron gun experiment also taking place at MIT. Preliminary gyro-amplifier results are presented, including measurement of rf power, gain versus interaction length, and the far-field pattern. A CARM experiment designed to operate in the TE 11 mode is also discussed

Small signal microwave amplifier design

CERN Document Server

Grosch, Theodore

2000-01-01

This book explains techniques and examples for designing stable amplifiers for high-frequency applications in which the signal is small and the amplifier circuit is linear. An in-depth discussion of linear network theory provides the foundation needed to develop actual designs. Examples throughout the book will show you how to apply the knowledge gained in each chapter leading to the complex design of low noise amplifiers. Many exercises at the end of each chapter will help students to practice their skills. The solutions to these design problems are available in an accompanying solutions book

The design of a 4’th order Bandpass Butterworth filter with one operational amplifier.

OpenAIRE

Gaunholt, Hans

2008-01-01

A numerical design method is presented for the design of all pole band pass active-RC filters applying just one operational amplifier. The operational amplifier model used is the integrator model: ωt/s where ωt is the unity gain fre-quency. The design method is used for the design of a fourth order band pass filter with Butterworth poles applying just one operational amplifier coupled as a unity gain amplifier. The unity gain amplifiers have the advantage of providing low power consumption, y...

Relationship between health services, socioeconomic variables and inadequate weight gain among Brazilian children.

Science.gov (United States)

de Souza, A C; Peterson, K E; Cufino, E; Gardner, J; Craveiro, M V; Ascherio, A

1999-01-01

This ecological analysis assessed the relative contribution of behavioural, health services and socioeconomic variables to inadequate weight gain in infants (0-11 months) and children (12-23 months) in 140 municipalities in the State of Ceara, north-east Brazil. To assess the total effect of selected variables, we fitted three unique sets of multivariate linear regression models to the prevalence of inadequate weight gain in infants and in children. The final predictive models included variables from the three sets. Findings showed that participation in growth monitoring and urbanization were inversely and significantly associated with the prevalence of inadequate weight gain in infants, accounting for 38.3% of the variation. Female illiteracy rate, participation in growth monitoring and degree of urbanization were all positively associated with prevalence of inadequate weight gain in children. Together, these factors explained 25.6% of the variation. Our results suggest that efforts to reduce the average municipality-specific female illiteracy rate, in combination with participation in growth monitoring, may be effective in reducing municipality-level prevalence of inadequate weight gain in infants and children in Ceara.

Performance Analysis Of Single-Pumped And Dual-Pumped Parametric Optical Amplifier

Directory of Open Access Journals (Sweden)

Sandar Myint

2015-06-01

Full Text Available Abstract In this study we present a performance analysis of single-pumped and dual- pumped parametric optical amplifier and present the analysis of gain flatness in dual- pumped Fiber Optical Parametric Amplifier FOPA based on four-wave mixing FWM. Result shows that changing the signal power and pump power give the various gains in FOPA. It is also found out that the parametric gain increase with increase in pump power and decrease in signal power. .Moreover in this paper the phase matching condition in FWM plays a vital role in predicting the gain profile of the FOPAbecause the parametric gain is maximum when the total phase mismatch is zero.In this paper single-pumped parametric amplification over a 50nm gain bandwidth is demonstrated using 500 nm highly nonlinear fiber HNLF and signal achieves about 31dB gain. For dual-pumped parametric amplification signal achieves 26.5dB gains over a 50nm gain bandwidth. Therefore dual-pumped parametric amplifier can provide relatively flat gain over a much wider bandwidth than the single-pumped FOPA.

Energy-Efficient Power Allocation for Fixed-Gain Amplify-and-Forward Relay Networks with Partial Channel State Information

KAUST Repository

Zafar, Ammar

2012-06-01

In this report, energy-efficient transmission and power allocation for fixed-gain amplify-and-forward relay networks with partial channel state information (CSI) are studied. In the energy-efficiency problem, the total power consumed is minimized while keeping the signal-to-noise-ratio (SNR) above a certain threshold. In the dual problem of power allocation, the end-to-end SNR is maximized under individual and global power constraints. Closed-form expressions for the optimal source and relay powers and the Lagrangian multiplier are obtained. Numerical results show that the optimal power allocation with partial CSI provides comparable performance as optimal power allocation with full CSI at low SNR.

Energy-Efficient Power Allocation for Fixed-Gain Amplify-and-Forward Relay Networks with Partial Channel State Information

KAUST Repository

Zafar, Ammar

2012-09-16

In this letter, energy-efficient transmission and power allocation for fixed-gain amplify-and-forward relay networks with partial channel state information (CSI) are studied. In the energy-efficiency problem, the total power consumed is minimized while keeping the signal-to-noise-ratio (SNR) above a certain threshold. In the dual problem of power allocation, the end-to-end SNR is maximized under individual and global power constraints. Closed-form expressions for the optimal source and relay powers and the Lagrangian multiplier are obtained. Numerical results show that the optimal power allocation with partial CSI provides comparable performance as optimal power allocation with full CSI at low SNR. © 2012 IEEE.

An experimental analysis of the waveguide modes in a high-gain free-electron laser amplifier

International Nuclear Information System (INIS)

Anderson, B.R.

1989-01-01

The presence, growth, and interaction of transverse waveguide modes in high-gain free-electron laser (FEL) amplifiers has been observed and studied. Using the Electron Laser Facility at Lawrence Livermore National Laboratory, a 3 MeV, 800 A electron beam generated by the Experimental Test Accelerator was injected into a planar wiggler. Power was then extracted and measured in the fundamental (TE 01 ) an higher-order modes (Te 21 and TM 21 ) under various sets of operating conditions. Horizontal focusing through the wiggler was provided by external quadrupole magnets. There was no axial guide field. The input microwave signal for amplification was generated by a 100 kW magnetron operating at 34.6 Ghz. Power measurements were taken for both flat and tapered wigglers, for two sizes of waveguide, and for both flat and tapered wigglers, for two sizes of waveguide, and for both fundamental and higher mode injection. Mode content was determined by sampling the radiated signal at specific points in the radiation patter. For the flat wiggler and with the large waveguide (2.9 cm x 9.8 cm) the power in the higher modes was comparable to power in the fundamental. both exhibited gains greater than 30 dB/m prior to saturation and both reached powers in excess of 80 MW. Choice of injection mode had little effect on the operation of the system. Operation with the smaller guide (WR-229) provided much better mode selectivity. The fundamental mode continued to show optimum gain in excess of 30 dB/m while the higher-mode gain was of order 20 dB/m. As expected, power output increased significantly with the tapered wigglers. The relative mode content depended on the specific taper used

Effect of wetting-layer density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers

International Nuclear Information System (INIS)

Kim, Jungho; Yu, Bong-Ahn

2015-01-01

We numerically investigate the effect of the wetting-layer (WL) density of states on the gain and phase recovery dynamics of quantum-dot semiconductor optical amplifiers in both electrical and optical pumping schemes by solving 1088 coupled rate equations. The temporal variations of the ultrafast gain and phase recovery responses at the ground state (GS) are calculated as a function of the WL density of states. The ultrafast gain recovery responses do not significantly depend on the WL density of states in the electrical pumping scheme and the three optical pumping schemes such as the optical pumping to the WL, the optical pumping to the excited state ensemble, and the optical pumping to the GS ensemble. The ultrafast phase recovery responses are also not significantly affected by the WL density of states except the optical pumping to the WL, where the phase recovery component caused by the WL becomes slowed down as the WL density of states increases. (paper)

Advances in high-power rf amplifiers

International Nuclear Information System (INIS)

Tallerico, P.J.

1979-01-01

Several powerful accelerators and storage rings are being considered that will require tens or even hundreds of megawatts of continuous rf power. The economics of such large machines can be dictated by the cost and efficiency of the rf amplifiers. The overall design and performance of such narrow-band amplifiers, operating in the 50- to 1500-MHz region, are being theoretically studied as a function of frequency to determine the optimum rf amplifier output power, gain, efficiency, and dc power requirements. The state of the art for three types of amplifiers (gridded tubes, klystrons, and gyrocons) is considered and the development work necessary to improve each is discussed. The gyrocon is a new device, hence its various embodiments are discussed in detail. The Soviet designs are reviewed and the gyrocon's strengths and weaknesses are compared to other types of microwave amplifiers. The primary advantages of the gyrocon are the very large amount of power available from a single device and the excellent efficiency and stable operation. The klystron however, has much greater gain and is simpler mechanically. At very low frequencies, the small size of the gridded tube makes it the optimum choice for all but the most powerful systems

Pulse propagation in a two-pass optical amplifier with arbitrary laser beams overlap

Directory of Open Access Journals (Sweden)

AH Farahbod

2011-09-01

Full Text Available An analytical model for two-pass optical amplifier with arbitrary beams overlap has been developed which generalized the classical theory of Frantz-Nodvik for single pass amplifier. The effect of counterpropagating beams on gain and output energy fluence included in the model. Moreover, the appropriate limiting relations for two special cases of weak input signal and saturation state of the amplifier gain have been derived. The results indicate that for complete beams overlap, the gain and output energy have the least values. The model predictions are consistent with experimental observations and exact analytical model for two-pass amplifier when beam propagation paths are coincided.

A numerical design approach for single amplifier, Active-RC Butterworth filter of order 5

OpenAIRE

Gaunholt, Hans

2007-01-01

A design method is presented for the design of all pole lowpass active-RC filters applying operational amplifiers. The operational amplifier model used is the integrator model: omegat/s where omegat is the unity gain frequency. The design method is used for the design of a fifth order Butterworth filter applying just one operational amplifier coupled as a unity gain amplifier. It is shown that the influence from the real operational amplifier may be reduced by trimming just one resistor in th...

Bismuth-doped fibre amplifier operating between 1600 and 1800 nm

Energy Technology Data Exchange (ETDEWEB)

Firstov, S V; Alyshev, S V; Riumkin, K E; Mel' kumov, M A; Dianov, E M [Fiber Optics Research Center, Russian Academy of Sciences, Moscow (Russian Federation); Khopin, V F; Gurjanov, A N [G.G.Devyatykh Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, Nizhnii Novgorod (Russian Federation)

2015-12-31

We report the first bismuth-doped fibre amplifier operating between 1600 and 1800 nm, which utilises bidirectional pumping (co-propagating and counter-propagating pump beams) by laser diodes at a wavelength of 1550 nm. The largest gain coefficient of the amplifier is 23 dB, at a wavelength of 1710 nm. It has a noise figure of 7 dB, 3-dB gain bandwidth of 40 nm and gain efficiency of 0.1 dB mW{sup -1}. (letters)

Theoretical analysis of quantum dot amplifiers with high saturation power and low noise figure

DEFF Research Database (Denmark)

Berg, Tommy Winther; Mørk, Jesper

2002-01-01

Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers.......Semiconductor quantum dot amplifiers are predicted to exhibit superior characteristics such as high gain, and output power and low noise. The analysis provides criteria and design guidelines for the realization of high quality amplifiers....

Electrospun amplified fiber optics.

Science.gov (United States)

Morello, Giovanni; Camposeo, Andrea; Moffa, Maria; Pisignano, Dario

2015-03-11

All-optical signal processing is the focus of much research aiming to obtain effective alternatives to existing data transmission platforms. Amplification of light in fiber optics, such as in Erbium-doped fiber amplifiers, is especially important for efficient signal transmission. However, the complex fabrication methods involving high-temperature processes performed in a highly pure environment slow the fabrication process and make amplified components expensive with respect to an ideal, high-throughput, room temperature production. Here, we report on near-infrared polymer fiber amplifiers working over a band of ∼20 nm. The fibers are cheap, spun with a process entirely carried out at room temperature, and shown to have amplified spontaneous emission with good gain coefficients and low levels of optical losses (a few cm(-1)). The amplification process is favored by high fiber quality and low self-absorption. The found performance metrics appear to be suitable for short-distance operations, and the large variety of commercially available doping dyes might allow for effective multiwavelength operations by electrospun amplified fiber optics.

Effects of entanglement in an ideal optical amplifier

Science.gov (United States)

Franson, J. D.; Brewster, R. A.

2018-04-01

In an ideal linear amplifier, the output signal is linearly related to the input signal with an additive noise that is independent of the input. The decoherence of a quantum-mechanical state as a result of optical amplification is usually assumed to be due to the addition of quantum noise. Here we show that entanglement between the input signal and the amplifying medium can produce an exponentially-large amount of decoherence in an ideal optical amplifier even when the gain is arbitrarily close to unity and the added noise is negligible. These effects occur for macroscopic superposition states, where even a small amount of gain can leave a significant amount of which-path information in the environment. Our results show that the usual input/output relation of a linear amplifier does not provide a complete description of the output state when post-selection is used.

GaN-based Power amplifiers for microwave applications

Directory of Open Access Journals (Sweden)

Jorge Julián Moreno-Rubio

2016-01-01

Full Text Available This paper presents a discussion about the design strategies of different kind of power amplifiers for RF/Microwave appli- cations, such as the tuned load power amplifier, class F, class F-1 and Doherty. Furthermore, it is shown the continuous wave characterization of the amplifiers above mentioned. A comparison between the obtained results, in terms of gain, efficiency and output power is presented.

A high-gain and high-efficiency X-band triaxial klystron amplifier with two-stage cascaded bunching cavities

Science.gov (United States)

Zhang, Wei; Ju, Jinchuan; Zhang, Jun; Zhong, Huihuang

2017-12-01

To achieve GW-level amplification output radiation at the X-band, a relativistic triaxial klystron amplifier with two-stage cascaded double-gap bunching cavities is investigated. The input cavity is optimized to obtain a high absorption rate of the external injection microwave. The cascaded bunching cavities are optimized to achieve a high depth of the fundamental harmonic current. A double-gap standing wave extractor is designed to improve the beam wave conversion efficiency. Two reflectors with high reflection coefficients both to the asymmetric mode and the TEM mode are employed to suppress the asymmetric mode competition and TEM mode microwave leakage. Particle-in-cell simulation results show that a high power microwave with a power of 2.53 GW and a frequency of 8.4 GHz is generated with a 690 kV, 9.3 kA electron beam excitation and a 25 kW seed microwave injection. Particularly, the achieved power conversion efficiency is about 40%, and the gain is as high as 50 dB. Meanwhile, there is insignificant self-excitation of the parasitic mode in the proposed structure by adopting the reflectors. The relative phase difference between the injected signals and the output microwaves keeps locked after the amplifier becomes saturated.

Improving the maximum transmission distance of continuous-variable quantum key distribution with noisy coherent states using a noiseless amplifier

International Nuclear Information System (INIS)

Wang, Tianyi; Yu, Song; Zhang, Yi-Chen; Gu, Wanyi; Guo, Hong

2014-01-01

By employing a nondeterministic noiseless linear amplifier, we propose to increase the maximum transmission distance of continuous-variable quantum key distribution with noisy coherent states. With the covariance matrix transformation, the expression of secret key rate under reverse reconciliation is derived against collective entangling cloner attacks. We show that the noiseless linear amplifier can compensate the detrimental effect of the preparation noise with an enhancement of the maximum transmission distance and the noise resistance. - Highlights: • Noiseless amplifier is applied in noisy coherent state quantum key distribution. • Negative effect of preparation noise is compensated by noiseless amplification. • Maximum transmission distance and noise resistance are both enhanced

Single crystalline Er{sub 2}O{sub 3}:sapphire films as potentially high-gain amplifiers at telecommunication wavelength

Energy Technology Data Exchange (ETDEWEB)

Kuznetsov, A. S.; Sadofev, S.; Schäfer, P.; Kalusniak, S.; Henneberger, F., E-mail: fh@physik.hu-berlin.de [Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin (Germany)

2014-11-10

Single crystalline thin films of Er{sub 2}O{sub 3}, demonstrating efficient 1.5 μm luminescence of Er{sup 3+} at room temperature were grown on Al{sub 2}O{sub 3} substrate by molecular beam epitaxy. The absorption coefficient at 1.536 μm was found to reach 270 cm{sup −1} translating in a maximal possible gain of 1390 dBcm{sup −1}. In conjunction with the 10% higher refractive index as compared to Al{sub 2}O{sub 3}, this opens the possibility to use Er{sub 2}O{sub 3}:sapphire films as short-length waveguide amplifiers in telecommunication.

A temperature-dependent gain control system for improving the stability of Si-PM-based PET systems

International Nuclear Information System (INIS)

Yamamoto, Seiichi; Satomi, Junkichi; Watabe, Tadashi; Imaizumi, Masao; Shimosegawa, Eku; Hatazawa, Jun; Watabe, Hiroshi; Kanai, Yasukazu

2011-01-01

The silicon-photomultiplier (Si-PM) is a promising photodetector for the development of new PET systems due to its small size, high gain and relatively low sensitivity to the static magnetic field. One drawback of the Si-PM is that it has significant temperature-dependent gain that poses a problem for the stability of the Si-PM-based PET system. To reduce this problem, we developed and tested a temperature-dependent gain control system for the Si-PM-based PET system. The system consists of a thermometer, analog-to-digital converter, personal computer, digital-to-analog converter and variable gain amplifiers in the weight summing board of the PET system. Temperature characteristics of the Si-PM array are measured and the calculated correction factor is sent to the variable gain amplifier. Without this correction, the temperature-dependent peak channel shifts of the block detector were -55% from 20 deg. C to 35 deg.C. With the correction, the peak channel variations were corrected within ±8%. The coincidence count rate of the Si-PM-based PET system was measured using a Na-22 point source while monitoring the room temperature. Without the correction, the count rate inversely changed with the room temperature by 10% for 1.5 deg. C temperature changes. With the correction, the count rate variation was reduced to within 3.7%. These results indicate that the developed temperature-dependent gain control system can contribute to improving the stability of Si-PM-based PET systems.

Power neodymium-glass amplifier of a repetitively pulsed laser

Energy Technology Data Exchange (ETDEWEB)

Vinogradov, Aleksandr V; Gaganov, V E; Garanin, Sergey G; Zhidkov, N V; Krotov, V A; Martynenko, S P; Pozdnyakov, E V; Solomatin, I I [Russian Federal Nuclear Center ' All-Russian Research Institute of Experimental Physics' , Sarov, Nizhnii Novgorod region (Russian Federation)

2011-11-30

A neodymium-glass diode-pumped amplifier with a zigzag laser beam propagation through the active medium was elaborated; the amplifier is intended for operation in a repetitively pulsed laser. An amplifier unit with an aperture of 20 Multiplication-Sign 25 mm and a {approx}40-cm long active medium was put to a test. The energy of pump radiation amounts to 140 J at a wavelength of 806 nm for a pump duration of 550 {mu}s. The energy parameters of the amplifier were experimentally determined: the small-signal gain per pass {approx}3.2, the linear gain {approx}0.031 cm{sup -1} with a nonuniformity of its distribution over the aperture within 15%, the stored energy of 0.16 - 0.21 J cm{sup -3}. The wavefront distortions in the zigzag laser-beam propagation through the active element of the amplifier did not exceed 0.4{lambda} ({lambda} = 0.63 {mu}m is the probing radiation wavelength).

Power neodymium-glass amplifier of a repetitively pulsed laser

International Nuclear Information System (INIS)

Vinogradov, Aleksandr V; Gaganov, V E; Garanin, Sergey G; Zhidkov, N V; Krotov, V A; Martynenko, S P; Pozdnyakov, E V; Solomatin, I I

2011-01-01

A neodymium-glass diode-pumped amplifier with a zigzag laser beam propagation through the active medium was elaborated; the amplifier is intended for operation in a repetitively pulsed laser. An amplifier unit with an aperture of 20 × 25 mm and a ∼40-cm long active medium was put to a test. The energy of pump radiation amounts to 140 J at a wavelength of 806 nm for a pump duration of 550 μs. The energy parameters of the amplifier were experimentally determined: the small-signal gain per pass ∼3.2, the linear gain ∼0.031 cm -1 with a nonuniformity of its distribution over the aperture within 15%, the stored energy of 0.16 - 0.21 J cm -3 . The wavefront distortions in the zigzag laser-beam propagation through the active element of the amplifier did not exceed 0.4λ (λ = 0.63 μm is the probing radiation wavelength).

Amplified spontaneous emission in solar-pumped iodine laser

Science.gov (United States)

Cho, Yong S.; Hwang, In H.; Han, Kwang S.; Lee, Ja H.

1992-01-01

The amplified spontaneous emission (ASE) from a long pulse, solar-simulating radiation pumped iodine laser amplifier is studied. The ASE threshold pump intensity is almost proportional to the inverse of the laser gain length when the gas pressure is constant in the laser tube.

Measurements and modeling of gain coefficients for neodymium laser glasses

International Nuclear Information System (INIS)

Linford, G.J.; Saroyan, R.A.; Trenholme, J.B.; Weber, M.J.

1979-01-01

Small-signal gain coefficients are reported for neodymium in silicate, phosphate, fluorophosphate, and fluoroberyllate laser glasses. Measurements were made in a disk amplifier under identical conditions. Using spectroscopic data as the input, amplifier gain is calculated as a fucntion of flashlamp energy, pumping pulse duration, disk thickness, and Nd-doping. The agreement between predicted and measured gains is generally with ;plus or minus;10 percent, consistent with experimental uncertainties in the model and the parameters used. The operating conditions which optimize amplifier performance and efficiency for a given laser glass may be found using spectroscopic data alone. This process can be extended to derive the most cost-effective staging of amplifier chains for fusion lasers. A discussion of the model and examples of calculations are presented

Predistortion of a Bidirectional Cuk Audio Amplifier

DEFF Research Database (Denmark)

Birch, Thomas Hagen; Nielsen, Dennis; Knott, Arnold

2014-01-01

Some non-linear amplifier topologies are capable of providing a larger voltage gain than one from a DC source, which could make them suitable for various applications. However, the non-linearities introduce a significant amount of harmonic distortion (THD). Some of this distortion could be reduced...... using predistortion. This paper suggests linearizing a nonlinear bidirectional Cuk audio amplifier using an analog predistortion approach. A prototype power stage was built and results show that a voltage gain of up to 9 dB and reduction in THD from 6% down to 3% was obtainable using this approach....

Subpicosecond gain dynamics in GaAlAs laser diodes

Energy Technology Data Exchange (ETDEWEB)

Kesler, M.P.; Ippen, E.P.

1987-11-30

Ultrafast gain dynamics in GaAlAs diode amplifiers have been studied using 100 fs optical pulses. Pulse propagation through the amplifier resulted in temporal broadening and pulse shaping due to both gain saturation and material dispersion. Pump-probe experiments indicate the presence of two processes contributing to the gain dynamics but give no evidence of spectral hole burning. A dynamic carrier heating model is presented to explain all of the observed gain nonlinearities, and the implications of our results on the dynamic response of laser diodes are discussed.

Charge-sensitive poly-silicon TFT amplifiers for a-Si:H pixel particle detectors

International Nuclear Information System (INIS)

Cho, G.; Perez-Mendez, V.; Hack, M.; Lewis, A.

1992-04-01

Prototype charge-sensitive poly-Si TFT amplifiers have been made for the amplification of signals (from an a-Si:H pixel diode used as an ionizing particle detector). They consist of a charge-sensitive gain stage, a voltage gain stage and a source follower output stage. The gain-bandwidth product of the amplifier is ∼ 300 MHz. When the amplifier is connected to a pixel detector of 0.2 pF, it gives a charge-to-voltage gain of ∼ 0.02 mV/electrons with a pulse rise time less than 100 nsec. An equivalent noise charge of the front-end TFT is ∼ 1000 electrons for a shaping time of 1 μsec

Transparent dispersion compensator with built-in gain equalizer

DEFF Research Database (Denmark)

Rottwitt, Karsten; Doerr, C.

2002-01-01

In this work we describe a method to obtain a transparent or even an amplifying dispersion compensating module with built-in gain equalization functionality. The principle of operation and experimental results are illustrated.......In this work we describe a method to obtain a transparent or even an amplifying dispersion compensating module with built-in gain equalization functionality. The principle of operation and experimental results are illustrated....

Study of the amplified spontaneous emission spectral width and gain coefficient for a KrF laser in unsaturated and saturated conditions

International Nuclear Information System (INIS)

Hariri, A; Sarikhani, S

2014-01-01

On the basis of a model of a geometrically dependent gain coefficient, the amplified spontaneous emission (ASE) spectral width was calculated analytically for the nearly resonant transition of ν ∼ ν 0 , and also numerically for a wide range of transition frequencies. For this purpose, the intensity rate equation was used under unsaturated and saturated conditions. For verifying the proposed model, reported measurements of the ASE energy versus the excitation length for a KrF laser were used. For the excitation length of l = 84 cm corresponding to single-path propagation, the ASE spectral width for the homogeneously broadened transition was calculated to be 6.28 Å, to be compared with the measured 4.1 Å spectral width reported for a KrF oscillator utilizing a two-mirror resonator. With the gain parameters obtained from the ASE energy measurements, the unsaturated and saturated gain coefficients for l = 84 cm were calculated to be 0.042 cm −1 and 0.014 cm −1 , respectively. These values of the gain coefficient are comparable to but slightly lower than the measured gain coefficient for laser systems of 80–100 cm excitation lengths reported from different laboratories. (letter)

Cross-gain modulation in Raman fiber amplifier: experimentation and modeling

Czech Academy of Sciences Publication Activity Database

Menif, M.; Karásek, Miroslav; Rusch, L. A.

2002-01-01

Roč. 14, č. 9 (2002), s. 1261-1263 ISSN 1041-1135 R&D Projects: GA MŠk OC 265.10 Institutional research plan: CEZ:AV0Z2067918 Keywords : wavelength division multiplexing * optical communication * optical fibre amplifiers Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.100, year: 2002

Monolithically integrated quantum dot optical gain modulator with semiconductor optical amplifier for 10-Gb/s photonic transmission

Science.gov (United States)

Yamamoto, Naokatsu; Akahane, Kouichi; Umezawa, Toshimasa; Kawanishi, Tetsuya

2015-03-01

Short-range interconnection and/or data center networks require high capacity and a large number of channels in order to support numerous connections. Solutions employed to meet these requirements involve the use of alternative wavebands to increase the usable optical frequency range. We recently proposed the use of the T- and O-bands (Thousand band: 1000-1260 nm, Original band: 1260-1360 nm) as alternative wavebands because large optical frequency resources (>60 THz) can be easily employed. In addition, a simple and compact Gb/s-order high-speed optical modulator is a critical photonic device for short-range communications. Therefore, to develop an optical modulator that acts as a highfunctional photonic device, we focused on the use of self-assembled quantum dots (QDs) as a three-dimensional (3D) confined structure because QD structures are highly suitable for realizing broadband optical gain media in the T+O bands. In this study, we use the high-quality broadband QD optical gain to develop a monolithically integrated QD optical gain modulator (QD-OGM) device that has a semiconductor optical amplifier (QD-SOA) for Gb/s-order highspeed optical data generation in the 1.3-μm waveband. The insertion loss of the device can be compensated through the SOA, and we obtained an optical gain change of up to ~7 dB in the OGM section. Further, we successfully demonstrate a 10-Gb/s clear eye opening using the QD-OGM/SOA device with a clock-data recovery sequence at the receiver end. These results suggest that the monolithic QD-EOM/SOA is suitable for increasing the number of wavelength channels for smart short-range communications.

Low Loss Nanostructured Polymers for Chip-scale Waveguide Amplifiers.

Science.gov (United States)

Chen, George F R; Zhao, Xinyu; Sun, Yang; He, Chaobin; Tan, Mei Chee; Tan, Dawn T H

2017-06-13

On-chip waveguide amplifiers offer higher gain in small device sizes and better integration with photonic devices than the commonly available fiber amplifiers. However, on-chip amplifiers have yet to make its way into the mainstream due to the limited availability of materials with ideal light guiding and amplification properties. A low-loss nanostructured on-chip channel polymeric waveguide amplifier was designed, characterized, fabricated and its gain experimentally measured at telecommunication wavelength. The active polymeric waveguide core comprises of NaYF 4 :Yb,Er,Ce core-shell nanocrystals dispersed within a SU8 polymer, where the nanoparticle interfacial characteristics were tailored using hydrolyzed polyhedral oligomeric silsesquioxane-graft-poly(methyl methacrylate) to improve particle dispersion. Both the enhanced IR emission intensity from our nanocrystals using a tri-dopant scheme and the reduced scattering losses from our excellent particle dispersion at a high solid loading of 6.0 vol% contributed to the outstanding optical performance of our polymeric waveguide. We achieved one of the highest reported gain of 6.6 dB/cm using a relatively low coupled pump power of 80 mW. These polymeric waveguide amplifiers offer greater promise for integrated optical circuits due to their processability and integration advantages which will play a key role in the emerging areas of flexible communication and optoelectronic devices.

Influence of higher order modes on angled-facet amplifiers

DEFF Research Database (Denmark)

Wang, Z.; Mikkelsen, B.; Stubkjær, Kristian

1991-01-01

The influence of the first-order mode on the residual reflectivity of angled-facet amplifiers is analyzed. For a 7 degrees angled-facet ridge waveguide amplifier with a single-layer antireflective (AR) coating, a gain ripple lower than 1-dB at 25-dB gain can be obtained independent...... of the polarization, even in the presence of a first-order mode with a 15-dB gain. The tolerances for the thickness and refractive index of the AR coating are reduced by a factor of three compared to operation in the fundamental mode only. The influence of the higher order mode can virtually be suppressed...

Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology

Directory of Open Access Journals (Sweden)

J. Sturm

2014-04-01

Full Text Available The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. The LNA has a tunable bandpass characteristics from 4.7 GHz up to 5.6 GHz and a continuously tunable gain from 22 dB down to 0 dB, which enables the required flexibility for multi-standard, multi-band receiver architectures. The gain and band tuning is realized with an optimized tunable active resistor in parallel to a tunable L-C tank amplifier load. The amplifier achieves an IIP3 linearity of -8dBm and a noise figure of 2.7 dB at the highest gain and frequency setting with a low power consumption of 10 mW. The high flexibility of the proposed LNA structure together with the overall good performance makes it well suited for future multi-standard low-cost receiver front-ends.

Empirical multichannel power consumption model for erbium-doped fiber amplifiers

DEFF Research Database (Denmark)

Saldaña Cercos, Silvia; de Paiva, Getulio E. R.; Argentato, Marcio Colazza

2015-01-01

In this paper we report on the first experimental power consumption analysis and model of single and multi-stage booster erbium-doped fiber amplifiers (EDFAs) with automatic gain control (AGC), accounting for channel number dependency. Results show that the amount of channels being amplified simu......-users, it is relevant to study channel number dependent power consumption for devising EDFA power efficient control and design.......In this paper we report on the first experimental power consumption analysis and model of single and multi-stage booster erbium-doped fiber amplifiers (EDFAs) with automatic gain control (AGC), accounting for channel number dependency. Results show that the amount of channels being amplified...... simultaneously contributes significantly, up to 48%, to the total power consumption due to the circuitry used for controlling the EDFA. As the number of simultaneous amplified WDM channels in high capacity long and medium reach transmission links reflects closely traffic patterns generated by end...

Investigation of switching frequency variations in self-oscillating class D amplifiers

DEFF Research Database (Denmark)

Nielsen, Dennis; Knott, Arnold; Pfaffinger, Gerhard

2009-01-01

Class D audio amplifiers have gained significant influence in sound reproduction due to their high efficiency. One of the most commonly used control methods in class D amplifiers is known as self-oscillation. An parameter of key interest in self-oscillating class D amplifiers is the switching fre...

Operational amplifiers theory and design

CERN Document Server

Huijsing, Johan

2017-01-01

This proven textbook guides readers to a thorough understanding of the theory and design of operational amplifiers (OpAmps). The core of the book presents systematically the design of operational amplifiers, classifying them into a periodic system of nine main overall configurations, ranging from one gain stage up to four or more stages. This division enables circuit designers to recognize quickly, understand, and choose optimal configurations. Characterization of operational amplifiers is given by macro models and error matrices, together with measurement techniques for their parameters. Definitions are given for four types of operational amplifiers depending on the grounding of their input and output ports. Many famous designs are evaluated in depth, using a carefully structured approach enhanced by numerous figures. In order to reinforce the concepts introduced and facilitate self-evaluation of design skills, the author includes problems with detailed solutions, as well as simulation exercises. Provides te...

A low power automatic gain control loop for a receiver

Energy Technology Data Exchange (ETDEWEB)

Li Guofeng; Geng Zhiqing; Wu Nanjian, E-mail: nanjian@red.semi.ac.c [State Key Laboratory for Super lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

2010-09-15

This paper proposes a new structure to lower the power consumption of a variable gain amplifier (VGA) and keep the linearity of the VGA unchanged. The structure is used in a high rate amplitude-shift keying (ASK) based IF-stage. It includes an automatic gain control (AGC) loop and ASK demodulator. The AGC mainly consists of six-stage VGAs. The IF-stage is realized in 0.18 {mu}m CMOS technology. The measurement results show that the power consumption of the whole system is very low. The system consumes 730 {mu}A while operating at 1.8 V. The minimum ASK signal the system could detect is 0.7 mV (peak to peak amplitude). (semiconductor integrated circuits)

Ring cavity for a Raman capillary waveguide amplifier

Science.gov (United States)

Kurnit, N.A.

1981-01-27

A regenerative ring amplifier and regenerative ring oscillator are described which function to feed back a portion of the Stokes signal to complete the ring cavity. The ring cavity configuration allows the CO/sub 2/ laser pump signal and Stokes signal to copropagate through the Raman capillary waveguide amplifier. A Raman capillary waveguide amplifier is also provided in the return leg of the ring cavity to increase gain without increasing the round trip time. Additionally, the ring cavity can be designed such that the amplified Stokes signal is synchronous with the mode-locked spikes of the incoming CO/sub 2/ laser pump signal.

Determination of the STIS CCD Gain

Science.gov (United States)

Riley, Allyssa; Monroe, TalaWanda; Lockwood, Sean

2016-09-01

This report summarizes the analysis and absolute gain results of the STIS Cycle 23 special calibration program 14424 that was designed to measure the gain of amplifiers A, C and D at nominal gain settings of 1 and 4 e-/DN. We used the mean-variance technique and the results indicate a mean-variance technique.

A parallel input composite transimpedance amplifier

Science.gov (United States)

Kim, D. J.; Kim, C.

2018-01-01

A new approach to high performance current to voltage preamplifier design is presented. The design using multiple operational amplifiers (op-amps) has a parasitic capacitance compensation network and a composite amplifier topology for fast, precision, and low noise performance. The input stage consisting of a parallel linked JFET op-amps and a high-speed bipolar junction transistor (BJT) gain stage driving the output in the composite amplifier topology, cooperating with the capacitance compensation feedback network, ensures wide bandwidth stability in the presence of input capacitance above 40 nF. The design is ideal for any two-probe measurement, including high impedance transport and scanning tunneling microscopy measurements.

On the Creation of Solitons in Amplifying Optical Fibers

Directory of Open Access Journals (Sweden)

Christoph Mahnke

2018-01-01

Full Text Available We treat the creation of solitons in amplifying fibers. Strictly speaking, solitons are objects in an integrable setting while in real-world systems loss and gain break integrability. That case usually has been treated in the perturbation limit of low loss or gain. In a recent approach fiber-optic solitons were described beyond that limit, so that it became possible to specify how and where solitons are eventually destroyed. Here we treat the opposite case: in the presence of gain, new solitons can arise from an initially weak pulse. We find conditions for that to happen for both localized and distributed gain, with no restriction to small gain. By tracing the energy budget we show that even when another soliton is already present and copropagates, a newly created soliton takes its energy from radiation only. Our results may find applications in amplified transmission lines or in fiber lasers.

Distributed amplifier using Josephson vortex flow transistors

International Nuclear Information System (INIS)

McGinnis, D.P.; Beyer, J.B.; Nordman, J.E.

1986-01-01

A wide-band traveling wave amplifier using vortex flow transistors is proposed. A vortex flow transistor is a long Josephson junction used as a current controlled voltage source. The dual nature of this device to the field effect transistor is exploited. A circuit model of this device is proposed and a distributed amplifier utilizing 50 vortex flow transistors is predicted to have useful gain to 100 GHz

Improving Continuous-Variable Measurement-Device-Independent Multipartite Quantum Communication with Optical Amplifiers*

Science.gov (United States)

Guo, Ying; Zhao, Wei; Li, Fei; Huang, Duan; Liao, Qin; Xie, Cai-Lang

2017-08-01

The developing tendency of continuous-variable (CV) measurement-device-independent (MDI) quantum cryptography is to cope with the practical issue of implementing scalable quantum networks. Up to now, most theoretical and experimental researches on CV-MDI QKD are focused on two-party protocols. However, we suggest a CV-MDI multipartite quantum secret sharing (QSS) protocol use the EPR states coupled with optical amplifiers. More remarkable, QSS is the real application in multipartite CV-MDI QKD, in other words, is the concrete implementation method of multipartite CV-MDI QKD. It can implement a practical quantum network scheme, under which the legal participants create the secret correlations by using EPR states connecting to an untrusted relay via insecure links and applying the multi-entangled Greenberger-Horne-Zeilinger (GHZ) state analysis at relay station. Even if there is a possibility that the relay may be completely tampered, the legal participants are still able to extract a secret key from network communication. The numerical simulation indicates that the quantum network communication can be achieved in an asymmetric scenario, fulfilling the demands of a practical quantum network. Additionally, we illustrate that the use of optical amplifiers can compensate the partial inherent imperfections of detectors and increase the transmission distance of the CV-MDI quantum system.

Transverse pumped laser amplifier architecture

Science.gov (United States)

Bayramian, Andrew James; Manes, Kenneth; Deri, Robert; Erlandson, Al; Caird, John; Spaeth, Mary

2013-07-09

An optical gain architecture includes a pump source and a pump aperture. The architecture also includes a gain region including a gain element operable to amplify light at a laser wavelength. The gain region is characterized by a first side intersecting an optical path, a second side opposing the first side, a third side adjacent the first and second sides, and a fourth side opposing the third side. The architecture further includes a dichroic section disposed between the pump aperture and the first side of the gain region. The dichroic section is characterized by low reflectance at a pump wavelength and high reflectance at the laser wavelength. The architecture additionally includes a first cladding section proximate to the third side of the gain region and a second cladding section proximate to the fourth side of the gain region.

Chaotic noise in superconducting microbridge 4-photon X-band parametric amplifier

International Nuclear Information System (INIS)

Andresen, J.E.; Christiansen, B.; Levinsen, M.T.

1988-01-01

The anomalous noise rise observed in nearly all types of parametric amplifiers based on Josephson junctions has been an intriguing as well as annoying problem for many years. This phenomenon has been most spectacular in microbridge amplifiers. Here we present measurements on externally pumped single microbridge 4-photon unbiased amplifiers, where the slit with the bridge is used as a slotline resonantly coupled to the waveguide in an exceptionally simple coupling scheme. This scheme may be of interest in itself, particularly if the noise problem can be overcome, but also in other connections. Up to 16 dB gain was obtained at the top of the waveguide. However, the noise rise was observed as usual. An analog computer study on a model including an input/output circiut was performed. The results are in very good agreement with the experiments. The amplification is heralded by a seemingly chaotic noise rise. This noise is then amplified linearly when gain occurs. Amplification is found to take place very close to where the supercurrent is completely suppressed by the pump. This has previously been interpreted as loss of phaselock being the cause of the noise rise. However, the power spectra of the time-derivative of the phase show the still to be locked in the region of positive gain. Furthermore, computations of the Lyapunov exponents show one to be positive in the region where gain occurs reaching a maximum value at the parameters corresponding to maximum gain. We therefore conclude that chaotic noise is indeed present in Josephson junction parametric amplifiers where low-impedance devices like microbridges with negligible capacitance are used as the active elements. (orig.)

Amplified spontaneous emission measurements on the Aurora large aperture module

International Nuclear Information System (INIS)

Oertel, J.A.; Czuchlewski, S.J.; Leland, W.T.; Turner, T.P.

1990-01-01

The large aperture module (LAM) of the Aurora KrF laser can be used to address a number of issues that relate to the scaling of KrF amplifiers to larger ICF systems. Perhaps foremost among these are the possible effects of amplified spontaneous emission (ASE) on laser performance. To assess this problem a 3-D computer code has been developed to model these ASE effects. The code uses an iterative procedure to arrive at a self-consistent steady state solution to the 3-D distribution of coherent and incoherent fluxes within the amplifier. Two-pass energy extraction, wall reflectivity, and nonuniform excitation are included in the model. The authors previously reported the effects of ASE on the small signal gains measured in the 1- x 1- x 2-m 3 LAM. The code also makes quantitative predictions of the ASE that should be generated in the amplifier. This paper indicates the radiance expected for a medium of uniform gain in terms of the (g - ν)L product and the parameter g/a. The quantity (g - ν)L is the product of the net gain and the path length along the direction of observation. The present experiments compare values of ASE measured at various locations around the LAM with the code predictions. The impact of ASE on amplifier output, is also discussed

Quantum Dot Semiconductor Optical Amplifiers - Physics and Applications

DEFF Research Database (Denmark)

Berg, Tommy Winther

2004-01-01

This thesis describes the physics and applications of quantum dot semiconductor optical amplifiers based on numerical simulations. These devices possess a number of unique properties compared with other types of semiconductor amplifiers, which should allow enhanced performance of semiconductor...... respects is comparable to those of fiber amplifiers. The possibility of inverting the optically active states to a large degree is essential in order to achieve this performance. Optical signal processing through cross gain modulation and four wave mixing is modeled and described. For both approaches...... and QW devices and to experiments on quantum dot amplifiers. These comparisons outline the qualitative differences between the different types of amplifiers. In all cases focus is put on the physical processes responsible the differences....

Design of low power common-gate low noise amplifier for 2.4 GHz wireless sensor network applications

International Nuclear Information System (INIS)

Zhang Meng; Li Zhiqun

2012-01-01

This paper presents a differential low power low noise amplifier designed for the wireless sensor network (WSN) in a TSMC 0.18 μm RF CMOS process. A two-stage cross-coupling cascaded common-gate (CG) topology has been designed as the amplifier. The first stage is a capacitive cross-coupling topology. It can reduce the power and noise simultaneously. The second stage is a positive feedback cross-coupling topology, used to set up a negative resistance to enhance the equivalent Q factor of the inductor at the load to improve the gain of the LNA. A differential inductor has been designed as the load to achieve reasonable gain. This inductor has been simulated by the means of momentum electromagnetic simulation in ADS. A 'π' circuit model has been built as the inductor model by iteration in ADS. The inductor has been fabricated separately to verify the model. The LNA has been fabricated and measured. The LNA works well centered at 2.44 GHz. The measured gain S 21 is variable with high gain at 16.8 dB and low gain at 1 dB. The NF (noise figure) at high gain mode is 3.6 dB, the input referenced 1 dB compression point (IP1dB) is about −8 dBm and the IIP3 is 2 dBm at low gain mode. The LNA consumes about 1.2 mA current from 1.8 V power supply.

Using MEMS Capacitive Switches in Tunable RF Amplifiers

OpenAIRE

Danson John; Plett Calvin; Tait Niall

2006-01-01

A MEMS capacitive switch suitable for use in tunable RF amplifiers is described. A MEMS switch is designed, fabricated, and characterized with physical and RF measurements for inclusion in simulations. Using the MEMS switch models, a dual-band low-noise amplifier (LNA) operating at GHz and GHz, and a tunable power amplifier (PA) at GHz are simulated in m CMOS. MEMS switches allow the LNA to operate with 11 dB of isolation between the two bands while maintaining dB of gain and sub- dB no...

Off-axis multipass amplifier as a large aperture driver stage for fusion lasers

International Nuclear Information System (INIS)

Murray, J.E.; Downs, D.C.; Junt, J.T.; Hermes, G.L.; Warren, W.E.

1981-01-01

A multipass amplifier configuration is described which has potential as a large aperture, high gain driver stage for fusion laser systems. We avoid the present limitations of large aperture switches by using an off-angle geometry that does not require an optical switch. The saturated gain characteristics of this multipass amplifier are optimized numerically. Three potential problems are investigated experimentally, self-lasing, output beam quality, and amplified spontaneous emission output. The results indicate comparable cost for comparable performance to a linear chain, with some operational advantage for the multipass driver stage

Bandwidth tunable amplifier for recording biopotential signals.

Science.gov (United States)

Hwang, Sungkil; Aninakwa, Kofi; Sonkusale, Sameer

2010-01-01

This paper presents a low noise, low power, bandwidth tunable amplifier for bio-potential signal recording applications. By employing depletion-mode pMOS transistor in diode configuration as a tunable sub pA current source to adjust the resistivity of MOS-Bipolar pseudo-resistor, the bandwidth is adjusted without any need for a separate band-pass filter stage. For high CMRR, PSRR and dynamic range, a fully differential structure is used in the design of the amplifier. The amplifier achieves a midband gain of 39.8dB with a tunable high-pass cutoff frequency ranging from 0.1Hz to 300Hz. The amplifier is fabricated in 0.18εm CMOS process and occupies 0.14mm(2) of chip area. A three electrode ECG measurement is performed using the proposed amplifier to show its feasibility for low power, compact wearable ECG monitoring application.

Two-wave mixing in a broad-area semiconductor amplifier

DEFF Research Database (Denmark)

Chi, M.; Jensen, S.B.; Huignard, J.P.

2006-01-01

The two-wave mixing in the broad-area semiconductor amplifier was investigated, both theoretically and experimentally. In detail we investigated how the optical gain is affected by the presence of the two-wave mixing interference grating. In the experimental setup we are able to turn on and off...... the interference pattern in the semiconductor amplifier. This arrangement allows us to determine the two-wave mixing gain. The coupled-wave equations of two-wave mixing were derived based on the Maxwell’s wave equation and rate equation of the carrier density. The analytical solutions of the coupled-wave equations...

Aspect-related Vegetation Differences Amplify Soil Moisture Variability in Semiarid Landscapes

Science.gov (United States)

Yetemen, O.; Srivastava, A.; Kumari, N.; Saco, P. M.

2017-12-01

differences amplify the soil moisture variability of semi-arid landscapes.

Investigation of switching frequency variations in self-oscillating class D amplifiers

OpenAIRE

Nielsen, Dennis; Knott, Arnold; Pfaffinger, Gerhard; Andersen, Michael A. E.

2009-01-01

Class D audio amplifiers have gained significant influence in sound reproduction due to their high efficiency. One of the most commonly used control methods in class D amplifiers is known as self-oscillation. An parameter of key interest in self-oscillating class D amplifiers is the switching frequency, which can be directly related to the performance of the amplifier. This paper will clearify the myth of the switching frequency through investigation of its dependency on modulation index and ...

Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier

International Nuclear Information System (INIS)

Huang Lirong; Yu Yi; Tian Peng; Huang Dexiu

2009-01-01

The optical gain of a quantum-dot semiconductor optical amplifier is usually seriously dependent on polarization; we propose a quantum-dot coupled tensile-strained quantum-well structure to obtain polarization insensitivity. The tensile-strained quantum well not only serves as a carrier injection layer of quantum dots but also offers gain to the transverse-magnetic mode. Based on the polarization-dependent coupled carrier rate-equation model, we study carrier competition among quantum well and quantum dots, and study the polarization dependence of the quantum-dot coupled quantum-well semiconductor optical amplifier. We also analyze polarization-dependent photon-mediated carrier distribution among quantum well and quantum dots. It is shown that polarization-insensitive gain can be realized by optimal design

Optical implementation of neural learning algorithms based on cross-gain modulation in a semiconductor optical amplifier

Science.gov (United States)

Li, Qiang; Wang, Zhi; Le, Yansi; Sun, Chonghui; Song, Xiaojia; Wu, Chongqing

2016-10-01

Neuromorphic engineering has a wide range of applications in the fields of machine learning, pattern recognition, adaptive control, etc. Photonics, characterized by its high speed, wide bandwidth, low power consumption and massive parallelism, is an ideal way to realize ultrafast spiking neural networks (SNNs). Synaptic plasticity is believed to be critical for learning, memory and development in neural circuits. Experimental results have shown that changes of synapse are highly dependent on the relative timing of pre- and postsynaptic spikes. Synaptic plasticity in which presynaptic spikes preceding postsynaptic spikes results in strengthening, while the opposite timing results in weakening is called antisymmetric spike-timing-dependent plasticity (STDP) learning rule. And synaptic plasticity has the opposite effect under the same conditions is called antisymmetric anti-STDP learning rule. We proposed and experimentally demonstrated an optical implementation of neural learning algorithms, which can achieve both of antisymmetric STDP and anti-STDP learning rule, based on the cross-gain modulation (XGM) within a single semiconductor optical amplifier (SOA). The weight and height of the potentitation and depression window can be controlled by adjusting the injection current of the SOA, to mimic the biological antisymmetric STDP and anti-STDP learning rule more realistically. As the injection current increases, the width of depression and potentitation window decreases and height increases, due to the decreasing of recovery time and increasing of gain under a stronger injection current. Based on the demonstrated optical STDP circuit, ultrafast learning in optical SNNs can be realized.

Wideband pulse amplifiers for the NECTAr chip

International Nuclear Information System (INIS)

Sanuy, A.; Delagnes, E.; Gascon, D.; Sieiro, X.; Bolmont, J.; Corona, P.; Feinstein, F.; Glicenstein, J-F.; Naumann, C.L.; Nayman, P.; Ribó, M.

2012-01-01

The NECTAr collaboration's FE option for the camera of the CTA is a 16 bits and 1–3 GS/s sampling chip based on analog memories including most of the readout functions. This works describes the input amplifiers of the NECTAr ASIC. A fully differential wideband amplifier, with voltage gain up to 20 V/V and a BW of 400 MHz. As it is impossible to design a fully differential OpAmp with an 8 GHz GBW product in a 0.35 CMOS technology, an alternative implementation based on HF linearized transconductors is explored. The output buffer is a class AB miller operational amplifier, with special non-linear current boost.

Wideband pulse amplifiers for the NECTAr chip

Science.gov (United States)

Sanuy, A.; Delagnes, E.; Gascon, D.; Sieiro, X.; Bolmont, J.; Corona, P.; Feinstein, F.; Glicenstein, J.-F.; Naumann, C. L.; Nayman, P.; Ribó, M.; Tavernet, J.-P.; Toussenel, F.; Vincent, P.; Vorobiov, S.

2012-12-01

The NECTAr collaboration's FE option for the camera of the CTA is a 16 bits and 1-3 GS/s sampling chip based on analog memories including most of the readout functions. This works describes the input amplifiers of the NECTAr ASIC. A fully differential wideband amplifier, with voltage gain up to 20 V/V and a BW of 400 MHz. As it is impossible to design a fully differential OpAmp with an 8 GHz GBW product in a 0.35 CMOS technology, an alternative implementation based on HF linearized transconductors is explored. The output buffer is a class AB miller operational amplifier, with special non-linear current boost.

Low-noise audio amplifiers and preamplifier for use with intrinsic thermocouples

International Nuclear Information System (INIS)

Langner, G.C.; Sachs, R.D.; Stewart, F.L.

1979-03-01

Two simple, low-noise audio amplifiers and one low-noise preamplifier for use with intrinsic thermocouples were designed, built, and tested. The amplifiers and the preamplifier have different front end designs. One amplifier uses ultralow-noise operational amplifiers; the other amplifier uses a hybrid component. The preamplifier uses ultralow-noise discrete components. The amplifiers' equivalent noise inputs, at maximum gain, are 4.09 nV and 50 nV; the preamplifier's input is 4.05 μV. Their bandwidths are 15 600 Hz, 550 Hz, and 174 kHz, respectively. the amplifiers' equivalent noise inputs were measured from approx. 0 to 100 Hz, whereas the preamplifier's equivalent noise input was measured from approx. 0 to 174 kHz

Characterization of an erbium doped fiber amplifier starting from its experimental parameters

International Nuclear Information System (INIS)

Bello J, M.; Kuzin, E.A.; Ibarra E, B.; Tellez G, R.

2007-01-01

In this paper we describe a method to characterize the gain of an erbium-doped fiber amplifier (EDFA) through the numerical simulation of the signal beam along the amplifier. The simulation is based on a model constituted by the propagation and rate equations for an erbium-doped fiber. The manipulation of these equations allows us to regroup the parameters present in an EDFA, which we have named the A, B, C, D parameters, and they can be obtained experimentally from an erbium-doped fiber. Experimental results show that the measurement of these parameters allow us to estimate with very good correspondence the amplifier gain. (Author)

High-gain polymer optical waveguide amplifiers based on core-shell NaYF4/NaLuF4: Yb3+, Er3+ NPs-PMMA covalent-linking nanocomposites

Science.gov (United States)

Zhang, Meiling; Zhang, Weiwei; Wang, Fei; Zhao, Dan; Qu, Chunyang; Wang, Xibin; Yi, Yunji; Cassan, Eric; Zhang, Daming

2016-11-01

Waveguide amplifiers have always been significant key components for optical communication. Unfortunately, the low concentration of rare earth ions doped in the host material and the inadequate optimization of the waveguide structure have been the common bottleneck limitations. Here, a novel material, NaYF4/NaLuF4: 20% Yb3+, 2% Er3+ nanoparticle-Polymeric Methyl Methacrylate covalent-linking nanocomposite, was synthesized. The concentrations of Er3+ and Yb3+ doping increased an order of magnitude. Under a 980 nm laser excitation, highly efficient emission at 1.53 μm was obtained. The characteristic parameters of the single mode waveguide were carefully designed and optimized by using a finite difference method. A formulized iteration method is presented for solving the rate equations and the propagation equations of the EYCDWA, and both the steady state behavior and the gain were numerically simulated. The optimal Er3+ and Yb3+ concentrations are 2.8 × 1026 m-3 and 2.8 × 1027 m-3, and the optimal waveguide length is 1.3 cm. Both theoretical and experimental results indicated that, for an input signal power of 0.1 mW and a pump power of 400 mW, a net gain of 15.1 dB at 1530 nm is demonstrated. This result is the highest gain ever reported in polymer-based waveguide amplifiers doped with inorganic Er3+-Yb3+ codoped nanocrystals.

A 500-600 MHz GaN power amplifier with RC-LC stability network

Science.gov (United States)

Ma, Xinyu; Duan, Baoxing; Yang, Yintang

2017-08-01

A 500-600 MHz high-efficiency, high-power GaN power amplifier is designed and realized on the basis of the push-pull structure. The RC-LC stability network is proposed and applied to the power amplifier circuit for the first time. The RC-LC stability network can significantly reduce the high gain out the band, which eliminates the instability of the power amplifier circuit. The developed power amplifier exhibits 58.5 dBm (700 W) output power with a 17 dB gain and 85% PAE at 500-600 MHz, 300 μs, 20% duty cycle. It has the highest PAE in P-band among the products at home and abroad. Project supported by the National Key Basic Research Program of China (No. 2014CB339901).

High-Performance Operational and Instrumentation Amplifiers

NARCIS (Netherlands)

Shahi, B.

2015-01-01

This thesis describes techniques to reduce the offset error in precision instrumentation and operational amplifiers. The offset error which is considered a major error source associated with gain blocks, together with other errors are reviewed. Conventional and newer approaches to remove offset and

Bit rate and pulse width dependence of four-wave mixing of short optical pulses in semiconductor optical amplifiers

DEFF Research Database (Denmark)

Diez, S.; Mecozzi, A.; Mørk, Jesper

1999-01-01

We investigate the saturation properties of four-wave mixing of short optical pulses in a semiconductor optical amplifier. By varying the gain of the optical amplifier, we find a strong dependence of both conversion efficiency and signal-to-background ratio on pulse width and bit rate....... In particular, the signal-to-background ratio can be optimized for a specific amplifier gain. This behavior, which is coherently described in experiment and theory, is attributed to the dynamics of the amplified spontaneous emission, which is the main source of noise in a semiconductor optical amplifier....

Analysis and simulation of nonlinearity and effects of spontaneous emission in Schottky-junction-based plasmonic amplifiers.

Science.gov (United States)

Livani, Abdolber Mallah; Kaatuzian, Hassan

2015-07-01

An amplifier that operates on surface plasmon polaritons has been analyzed and simulated. Nonlinearity behavior and the spontaneous emission effects of the plasmonic amplifier are investigated in this paper. A rate equations approach has been used in which parameters are derived from simulation results of the plasmonic amplifier (Silvaco/ATLAS). Details on the method of this derivation are included, which were not previously reported. Rate equations are solved numerically by MATLAB codes. These codes verify the Silvaco results. The plasmonic amplifier operates on surface plasmons with a free-space wavelength of 1550 nm. Results show that, even without the effect of spontaneous emission, gain of the plasmonic amplifier saturates in high input levels. Saturation power, which can be used for comparing nonlinearity of different amplifiers, is 2.1 dBm for this amplifier. Amplified spontaneous emission reduces the gain of the amplifiers, which is long. There is an optimum value for the length of the amplifier. For the amplifier of this work, the optimum length for the small signal condition is 265 μm.

A state comparison amplifier with feed forward state correction

Science.gov (United States)

Mazzarella, Luca; Donaldson, Ross; Collins, Robert; Zanforlin, Ugo; Buller, Gerald; Jeffers, John

2017-04-01

The Quantum State Comparison AMPlifier (SCAMP) is a probabilistic amplifier that works for known sets of coherent states. The input state is mixed with a guess state at a beam splitter and one of the output ports is coupled to a detector. The other output contains the amplified state, which is accepted on the condition that no counts are recorded. The system uses only classical resources and has been shown to achieve high gain and repetition rate. However the output fidelity is not high enough for most quantum communication purposes. Here we show how the success probability and fidelity are enhanced by repeated comparison stages, conditioning later state choices on the outcomes of earlier detections. A detector firing at an early stage means that a guess is wrong. This knowledge allows us to correct the state perfectly. The system requires fast-switching between different input states, but still requires only classical resources. Figures of merit compare favourably with other schemes, most notably the probability-fidelity product is higher than for unambiguous state discrimination. Due to its simplicity, the system is a candidate to counteract quantum signal degradation in a lossy fibre or as a quantum receiver to improve the key rate of continuous variable quantum communication. The work was supported by the QComm Project of the UK Engineering and Physical Sciences Research Council (EP/M013472/1).

Cooperative upconversion as the gain-limiting factor in Er doped miniature Al2O3 optical waveguide amplifiers

International Nuclear Information System (INIS)

Kik, P.G.; Polman, A.

2003-01-01

Erbium doped Al 2 O 3 waveguide amplifiers were fabricated using two different doping methods, namely Er ion implantation into sputter deposited Al 2 O 3 , and co-sputtering from an Er 2 O 3 /Al 2 O 3 target. Although the Er concentration in both materials is almost identical (0.28 and 0.31 at. %), the amplifiers show a completely different behavior. Upon pumping with 1.48 μm, the co-sputtered waveguide shows a strong green luminescence from the 4 S 3/2 level, indicating efficient cooperative upconversion in this material. This is confirmed by pump power dependent measurements of the optical transmission at 1.53 μm and the spontaneous emission at 1.53 and 0.98 μm. All measurements can be accurately modeled using a set of rate equations that include first order and second order cooperative upconversion. The first order cooperative upconversion coefficient C 24 is found to be 3.5x10 -16 cm 3 s -1 in the co-sputtered material, two orders of magnitude higher than the value obtained in Er implanted Al 2 O 3 of 4.1x10 -18 cm 3 s -1 . It is concluded that the co-sputtering process results in a strongly inhomogeneous atomic scale spatial distribution of the Er ions. As a result, the co-sputtered waveguides do not show optical gain, while the implanted waveguides do

Transimpedance Amplifier for MEMS SAW Oscillator in 1.4GHz

Science.gov (United States)

Kamarudin, N.; Karim, J.; Hussin, H.

2018-03-01

This work is to design a transimpedance amplifier for MEMS SAW resonator to achieve low power consumption at desired frequency. A transimpedance amplifier is designed and characterized for MEMS SAW resonator in 0.18μm CMOS process. The transimpedance amplifier achieves gain is 31 dBΩ at 176°. The power consume by oscillator is 0.6mW at VDD 1.8V while phase noise at -133.97dBc/Hz at 10kHz.

C.A.D for broad-band multistage microwave transimpedance amplifier.

OpenAIRE

Olomo Ngongo, A.; Perennec, A.; Soares, R.; Jarry, P.

1992-01-01

In high data rate optical-fiber, it is necessary to employ an ultra broad-band transimpedance amplifier. In this paper, we present a technique for the design of a transimpedance amplifiers. It can be applied as well to the design of interstage equalizers for microwave transimpedance amplifiers. In the version described in this paper, the optimisation process is applied to the transimpedance gain and noise which is adjusted. Based on the load charge matching technique, a sequential procedure t...

Stimulated Brillouin scattering threshold in fiber amplifiers

International Nuclear Information System (INIS)

Liang Liping; Chang Liping

2011-01-01

Based on the wave coupling theory and the evolution model of the critical pump power (or Brillouin threshold) for stimulated Brillouin scattering (SBS) in double-clad fiber amplifiers, the influence of signal bandwidth, fiber-core diameter and amplifier gain on SBS threshold is simulated theoretically. And experimental measurements of SBS are presented in ytterbium-doped double-clad fiber amplifiers with single-frequency hundred nanosecond pulse amplification. Under different input signal pulses, the forward amplified pulse distortion is observed when the pulse energy is up to 660 nJ and the peak power is up to 3.3 W in the pulse amplification with pulse duration of 200 ns and repetition rate of 1 Hz. And the backward SBS narrow pulse appears. The pulse peak power equals to SBS threshold. Good agreement is shown between the modeled and experimental data. (authors)

Wideband pulse amplifiers for the NECTAr chip

Energy Technology Data Exchange (ETDEWEB)

Sanuy, A., E-mail: asanuy@ecm.ub.es [Dept. AM i Dept. ECM, Institut de Ciencies del Cosmos (ICC), Universitat de Barcelona. Marti i Franques 1, E08028, Barcelona (Spain); Delagnes, E. [IRFU/DSM/CEA, CE-Saclay, Bat. 141 SEN Saclay, F-91191, Gif-sur-Yvette (France); Gascon, D. [Dept. AM i Dept. ECM, Institut de Ciencies del Cosmos (ICC), Universitat de Barcelona. Marti i Franques 1, E08028, Barcelona (Spain); Sieiro, X. [Departament d' Electronica, Universitat de Barcelona. Marti i Franques 1, E08028, Barcelona (Spain); Bolmont, J.; Corona, P. [LPNHE, Universite Paris VI and Universite Paris VII and IN2P3/CNRS, Barre 12-22, 1er etage, 4 place Jussieu, 75252 Paris (France); Feinstein, F. [LUPM, Universite Montpellier II and IN2P3/CNRS, CC072, bat. 13, place Eugene Bataillon, 34095 Montpellier (France); Glicenstein, J-F. [IRFU/DSM/CEA, CE-Saclay, Bat. 141 SEN Saclay, F-91191, Gif-sur-Yvette (France); Naumann, C.L.; Nayman, P. [LPNHE, Universite Paris VI and Universite Paris VII and IN2P3/CNRS, Barre 12-22, 1er etage, 4 place Jussieu, 75252 Paris (France); Ribo, M. [Dept. AM i Dept. ECM, Institut de Ciencies del Cosmos (ICC), Universitat de Barcelona. Marti i Franques 1, E08028, Barcelona (Spain); and others

2012-12-11

The NECTAr collaboration's FE option for the camera of the CTA is a 16 bits and 1-3 GS/s sampling chip based on analog memories including most of the readout functions. This works describes the input amplifiers of the NECTAr ASIC. A fully differential wideband amplifier, with voltage gain up to 20 V/V and a BW of 400 MHz. As it is impossible to design a fully differential OpAmp with an 8 GHz GBW product in a 0.35 CMOS technology, an alternative implementation based on HF linearized transconductors is explored. The output buffer is a class AB miller operational amplifier, with special non-linear current boost.

Pulse GaAs field transistor amplifier with subnanosecond time transient

International Nuclear Information System (INIS)

Sidnev, A.N.

1987-01-01

Pulse amplifier on fast field effect GaAs transistors with Schottky barrier is described. The amplifier contains four cascades, the first three of which are made on combined transistors on the common-drain circuit. The last cascade is made on high-power field effect GaAs transistor for coordination with 50 ohm load. The amplifier operates within the range of input signals from 0.5 up to 100 mV with repetition frequency up to 16 Hz, The gain of the amplifier is ≅ 20 dB. The setting time at output pulses amplitude up to 1 V constitutes ∼ 0.2 ns

Power Allocation Strategies for Fixed-Gain Half-Duplex Amplify-and-Forward Relaying in Nakagami-m Fading

KAUST Repository

Zafar, Ammar

2013-09-01

In this paper, we study power allocation strategies for a fixed-gain amplify-and-forward relay network employing multiple relays. We consider two optimization problems for the relay network: 1) maximizing the end-to-end signalto- noise ratio (SNR) and 2) minimizing the total power consumption while maintaining the end-to-end SNR over a threshold value. We investigate these two problems for two relaying protocols of all-participate (AP) relaying and selective relaying and two cases of feedback to the relays, full and limited. We show that the SNR maximization problem is concave and the power minimization problem is convex for all protocols and feedback cases considered. We obtain closed-form expressions for the two problems in the case of full feedback and solve the problems through convex programming for limited feedback. Numerical results show the benefit of having full feedback at the relays for both optimization problems. However, they also show that feedback overhead can be reduced by having only limited feedback to the relays with only a small degradation in performance.

Investigation of switching frequency variations and EMI properties in self-oscillating class D amplifiers

DEFF Research Database (Denmark)

Nielsen, Dennis; Knott, Arnold; Pfaffinger, Gerhard

2009-01-01

Class D audio amplifiers have gained significant influence in sound reproduction due to their high efficiency. One of the most commonly used control methods in these amplifiers is self-oscillation. A parameter of key interest in self-oscillating amplifiers is the switching frequency, which is kno...

Stability of a 500 km erbium-doped fiber amplifier cascade

DEFF Research Database (Denmark)

Lumholt, Ole; Bjarklev, Anders Overgaard; Povlsen, Jørn Hedegaard

1992-01-01

The stability of a cascade system of erbium-doped fiber amplifiers, due to pump and signal power variations, has been examined by use of a very accurate model. Even with an automatic gain control loop included, a fallout of a pump laser in the first inline amplifier is shown to produce a more than...

Optomechanical transistor with mechanical gain

Science.gov (United States)

Zhang, X. Z.; Tian, Lin; Li, Yong

2018-04-01

We study an optomechanical transistor, where an input field can be transferred and amplified unidirectionally in a cyclic three-mode optomechanical system. In this system, the mechanical resonator is coupled simultaneously to two cavity modes. We show that it only requires a finite mechanical gain to achieve the nonreciprocal amplification. Here the nonreciprocity is caused by the phase difference between the linearized optomechanical couplings that breaks the time-reversal symmetry of this system. The amplification arises from the mechanical gain, which provides an effective phonon bath that pumps the mechanical mode coherently. This effect is analogous to the stimulated emission of atoms, where the probe field can be amplified when its frequency is in resonance with that of the anti-Stokes transition. We show that by choosing optimal parameters, this optomechanical transistor can reach perfect unidirectionality accompanied with strong amplification. In addition, the presence of the mechanical gain can result in ultralong delay in the phase of the probe field, which provides an alternative to controlling light transport in optomechanical systems.

Single-mode operation of a coiled multimode fiber amplifier

International Nuclear Information System (INIS)

Koplow, Jeffrey P.; Kliner, Dahv A. V.; Goldberg, Lew

2000-01-01

We report a new approach to obtaining single-transverse-mode operation of a multimode fiber amplifier in which the gain fiber is coiled to induce significant bend loss for all but the lowest-order mode. We demonstrated this method by constructing a coiled amplifier using Yb-doped, double-clad fiber with a core diameter of 25 μm and a numerical aperture of ∼0.1 (V≅7.4) . When the amplifier was operated as an amplified-spontaneous-emission source, the output beam had an M 2 value of 1.09±0.09 ; when seeded at 1064 nm, the slope efficiency was similar to that of an uncoiled amplifier. This technique will permit scaling of pulsed fiber lasers and amplifiers to significantly higher pulse energies and peak powers and cw fiber sources to higher average powers while maintaining excellent beam quality. (c) 2000 Optical Society of America

Numerical investigation of the nonlinear dynamics of a hybrid acousto-optic Bragg cell with a variable feedback gain

Science.gov (United States)

Chatterjee, Monish R.; Zhou, Hao

2014-09-01

Since around 1979, the operation of an acousto-optic Bragg cell under positive first-order feedback via amplification and delay in the loop has been studied extensively by several groups [1-3]. In recent work, the analysis of the nonlinear dynamics (NLD) of the system was extended to include bistable maps and Lyapunov exponents, and application of the chaos for signal encryption and decryption for uniform plane waves. The present work originated with the problem of a variable photodetector aperture opening relative to the first-order light. This potentially complex problem is simplified by assuming instead a variable feedback gain ( β ~ (t)), which leads to considerably different NLD. This paper examines initially the NLD versus the (DC) bias voltage for different variable- β ~ conditions, including slow and fast rates of change of the gain with time in relation to the feedback delay. It is found that the response depends critically on the rate of rise of the feedback gain, and also that the resulting chaotic regimes are generally significantly different from those for fixed values of β ~ . We have generated constant feedback gain and the variable feedback gain (t) chaos characteristics of the hybrid A-O network. Chaos as an equivalent carrier has been used to encrypt messages for both fixed and variable β ~ . The transmitted signal is detected from the encrypted carrier using a heterodyne method, using a slave Bragg cell with matched keys to generate local chaos followed by a low pass filter and a phase inverter. Results between variable- and fixed-gain systems are compared in terms of advantages and disadvantages.

Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers

DEFF Research Database (Denmark)

Borri, Paola; Langbein, Wolfgang Werner; Hvam, Jørn Märcher

2000-01-01

recovery of the spectral hole within ~100 fs is measured, comparable to bulk and quantum-well amplifiers, which is contradicting a carrier relaxation bottleneck in electrically pumped QD devices. The CH dynamics in the QD is quantitatively compared with results on an InGaAsP bulk amplifier. Reduced CH......The ultrafast gain and index dynamics in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers are measured at room temperature with femtosecond resolution. The role of spectral hole-burning (SHB) and carrier heating (CH) in the recovery of gain compression is investigated in detail. An ultrafast...

A low noise charge sensitive amplifier for use in vacuum photo diode readout

International Nuclear Information System (INIS)

Stephenson, R.

1982-08-01

The amplifier described consists of a charge sensitive pre-amplifier optimised for low noise with low values of input shunt capacitance, and a shaping amplifier providing both differentiation and integration. Amplifier gain is adjustable up to a maximum of approximately 100 μV/electron with a rise time of 2 μS to the peak of the output voltage, and with an open circuit input noise level of 150 electrons RMS. (author)

Ultra-stable, diode-pumped Nd-doped glass regenerative amplifier for the National Ignition Facility (NIF)

International Nuclear Information System (INIS)

Crane, J.K.; Martinez, M.; Beach, R.J.; Mitchell, S.; Pratt, G.; Christensen, J.J.

1995-12-01

We describe a diode laser-pumped Nd:glass regenerative amplifier that amplifies temporally shaped pulses with low distortion, high pulse-to- pulse stability, and high gain. This laser amplifier is a prototype subsystem for the National Ignition Facility (NIF) laser system. 2 refs., 1 fig

Bias-Voltage Stabilizer for HVHF Amplifiers in VHF Pulse-Echo Measurement Systems.

Science.gov (United States)

Choi, Hojong; Park, Chulwoo; Kim, Jungsuk; Jung, Hayong

2017-10-23

The impact of high-voltage-high-frequency (HVHF) amplifiers on echo-signal quality is greater with very-high-frequency (VHF, ≥100 MHz) ultrasound transducers than with low-frequency (LF, ≤15 MHz) ultrasound transducers. Hence, the bias voltage of an HVHF amplifier must be stabilized to ensure stable echo-signal amplitudes. We propose a bias-voltage stabilizer circuit to maintain stable DC voltages over a wide input range, thus reducing the harmonic-distortion components of the echo signals in VHF pulse-echo measurement systems. To confirm the feasibility of the bias-voltage stabilizer, we measured and compared the deviations in the gain of the HVHF amplifier with and without a bias-voltage stabilizer. Between -13 and 26 dBm, the measured gain deviations of a HVHF amplifier with a bias-voltage stabilizer are less than that of an amplifier without a bias-voltage stabilizer. In order to confirm the feasibility of the bias-voltage stabilizer, we compared the pulse-echo responses of the amplifiers, which are typically used for the evaluation of transducers or electronic components used in pulse-echo measurement systems. From the responses, we observed that the amplitudes of the echo signals of a VHF transducer triggered by the HVHF amplifier with a bias-voltage stabilizer were higher than those of the transducer triggered by the HVHF amplifier alone. The second, third, and fourth harmonic-distortion components of the HVHF amplifier with the bias-voltage stabilizer were also lower than those of the HVHF amplifier alone. Hence, the proposed scheme is a promising method for stabilizing the bias voltage of an HVHF amplifier, and improving the echo-signal quality of VHF transducers.

Compact solid state radio frequency amplifiers in kW regime for ...

Indian Academy of Sciences (India)

RF amplifier; solid state amplifier; power combiner and divider; .... was designed using planar and coaxial transmission line baluns with minimum lumped variable ..... Cripps S C 1999 RF power amplifiers for wireless communication. Norwood: ...

An Analysis on a Dynamic Amplifier and Calibration Methods for a Pseudo-Differential Dynamic Comparator

Science.gov (United States)

Paik, Daehwa; Miyahara, Masaya; Matsuzawa, Akira

This paper analyzes a pseudo-differential dynamic comparator with a dynamic pre-amplifier. The transient gain of a dynamic pre-amplifier is derived and applied to equations of the thermal noise and the regeneration time of a comparator. This analysis enhances understanding of the roles of transistor's parameters in pre-amplifier's gain. Based on the calculated gain, two calibration methods are also analyzed. One is calibration of a load capacitance and the other is calibration of a bypass current. The analysis helps designers' estimation for the accuracy of calibration, dead-zone of a comparator with a calibration circuit, and the influence of PVT variation. The analyzed comparator uses 90-nm CMOS technology as an example and each estimation is compared with simulation results.

Cryogenic transimpedance amplifier for micromechanical capacitive sensors.

Science.gov (United States)

Antonio, D; Pastoriza, H; Julián, P; Mandolesi, P

2008-08-01

We developed a cryogenic transimpedance amplifier that works at a broad range of temperatures, from room temperature down to 4 K. The device was realized with a standard complementary metal oxide semiconductor 1.5 mum process. Measurements of current-voltage characteristics, open-loop gain, input referred noise current, and power consumption are presented as a function of temperature. The transimpedance amplifier has been successfully applied to sense the motion of a polysilicon micromechanical oscillator at low temperatures. The whole device is intended to serve as a magnetometer for microscopic superconducting samples.

Protection of surviving channels in pump-controlled gain-locked Raman fiber amplifier

Czech Academy of Sciences Publication Activity Database

Karásek, Miroslav; Menif, M.

2002-01-01

Roč. 210, 1/2 (2002), s. 57-65 ISSN 0030-4018 R&D Projects: GA AV ČR IAA2067202 Institutional research plan: CEZ:AV0Z2067918 Keywords : optical fibre amplifiers * wavelength division multiplexing * optical communication Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.488, year: 2002

FDML swept source at 1060 nm using a tapered amplifier

DEFF Research Database (Denmark)

Marschall, Sebastian; Klein, Thomas; Wieser, Wolfgang

2010-01-01

We present a novel frequency-swept light source working at 1060nm that utilizes a tapered amplifier as gain medium. These devices feature significantly higher saturation power than conventional semiconductor optical amplifiers and can thus improve the limited output power of swept sources in this...... an axial resolution of 15 µm in air (~11µm in tissue) for OCT applications can be achieved....

Characterization and Optimization of the Magnetron Directional Amplifier

National Research Council Canada - National Science Library

Hatfield, Michael

1999-01-01

.... A conventional microwave oven magnetron may be converted into a two-port amplifier capable of delivering over 30 dB of gain, while remaining phase-locked to the input signal over a wide frequency range...

Class-D audio amplifiers with negative feedback

OpenAIRE

Cox, Stephen M.; Candy, B. H.

2006-01-01

There are many different designs for audio amplifiers. Class-D, or switching, amplifiers generate their output signal in the form of a high-frequency square wave of variable duty cycle (ratio of on time to off time). The square-wave nature of the output allows a particularly efficient output stage, with minimal losses. The output is ultimately filtered to remove components of the spectrum above the audio range. Mathematical models are derived here for a variety of related class-D amplifier de...

All-metal coupling and package of semiconductor laser and amplifier with optical fiber

International Nuclear Information System (INIS)

Xu Fenglan; Li Lina; Zhang Yueqing

1992-01-01

The semiconductor laser and optical amplifier made by Changchun Institute of Physics coupled with optical fiber by use of all-metal coupling are represented. The net gain of semiconductor laser amplifier with optical fiber is 14 ∼18 dB

Behavior of MOSFET Amplifier in Radiation Fields

International Nuclear Information System (INIS)

Sharshar, K.A.A.; Ashry, M.

2000-01-01

MOSFET type 2 N 3823 characteristics and its application as an amplifier are analyzed including the effects of gamma, electron beam 1.5 MeV 25 m A and neutron flux. The 1-V characteristics, transfer curve, and the frequency response of the amplifier, and the amplification factor(A v 0 are discussed with MOSFET circuit parameters. The drain current and the amplitude of the output signal decrease as the absorbed dose increases. The measured values of the amplified signal are attenuated by 30% and 6% after exposing the MOSFET to gamma radiation and electron beam at the same dose respectively. Also for exposure to 4x10 13 N/cm 3 neutrons decreased the measured value of the amplified signal by 73% of the initial values. The decrease in the gain of the MOSFET is due to the degradation of the transconductance. It is also noticed that percentage of the decrease depends on the type of radiation

A 60-dB linear VGA with novel exponential gain approximation

International Nuclear Information System (INIS)

Zhou Jiaye; Tan Xi; Wang Junyu; Tang Zhangwen; Min Hao

2009-01-01

A CMOS variable gain amplifier (VGA) that adopts a novel exponential gain approximation is presented. No additional exponential gain control circuit is required in the proposed VGA used in a direct conversion receiver. A wide gain control voltage from 0.4 to 1.8 V and a high linearity performance are achieved. The three-stage VGA with automatic gain control (AGC) and DC offset cancellation (DCOC) is fabricated in a 0.18-μm CMOS technology and shows a linear gain range of more than 58-dB with a linearity error less than ±1 dB. The 3-dB bandwidth is over 8 MHz at all gain settings. The measured input-referred third intercept point (IIP3) of the proposed VGA varies from -18.1 to 13.5 dBm, and the measured noise figure varies from 27 to 65 dB at a frequency of 1 MHz. The dynamic range of the closed-loop AGC exceeds 56 dB, where the output signal-to-noise-and-distortion ratio (SNDR) reaches 20 dB. The whole circuit, occupying 0.3 mm 2 of chip area, dissipates less than 3.7 mA from a 1.8-V supply.

Design techniques and measured performance for a uniformly-pumped 4-cm diameter rod amplifier

International Nuclear Information System (INIS)

Linford, G.J.; Yarema, S.M.

1976-01-01

A solid-state laser rod amplifier of moderate aperture achieving a high degree of spatial gain uniformity has been constructed and its performance evaluated. Digital and analogue techniques were used to optimize the amplifier design for performance in a laser fusion application. Results of simple 2-D computer simulations and experimental evaluations of amplifier performance are presented

Remote optically-tunable transimpedance amplifiers for quantum well diodes

Energy Technology Data Exchange (ETDEWEB)

Carraresi, L.; Landi, G.; Rocchi, S.; Vignoli, V

1999-08-01

In a previous paper we discussed the advantages in using linear optical transmission systems based on quantum well diodes in modern high energy physics experiments. In this paper, after a short summary of the quantum well theory, the electronics section of the above optical transmission system is presented. In particular the basic configuration of a transimpedance amplifier and the arrangement of an optical remote control system for the amplifier gain and bandwidth tuning are discussed.

Remote optically-tunable transimpedance amplifiers for quantum well diodes

International Nuclear Information System (INIS)

Carraresi, L.; Landi, G.; Rocchi, S.; Vignoli, V.

1999-01-01

In a previous paper we discussed the advantages in using linear optical transmission systems based on quantum well diodes in modern high energy physics experiments. In this paper, after a short summary of the quantum well theory, the electronics section of the above optical transmission system is presented. In particular the basic configuration of a transimpedance amplifier and the arrangement of an optical remote control system for the amplifier gain and bandwidth tuning are discussed

Spatial chirp in Ti:sapphire multipass amplifier

International Nuclear Information System (INIS)

Li Wenkai; Lu Jun; Li Yanyan; Guo Xiaoyang; Wu Fenxiang; Yu Linpeng; Wang Pengfei; Xu Yi; Leng Yuxin

2017-01-01

The spatial chirp generated in the Ti:sapphire multipass amplifier is numerically investigated based on the one-dimensional (1D) and two-dimensional (2D) Frantz–Nodvik equations. The simulation indicates that the spatial chirp is induced by the spatially inhomogeneous gain, and it can be almost eliminated by utilization of proper beam profiles and spot sizes of the signal and pump pulses, for example, the pump pulse has a top-hatted beam profile and the signal pulse has a super-Gaussian beam profile with a relatively larger spot size. In this way, a clear understanding of spatial chirp mechanisms in the Ti:sapphire multipass amplifier is proposed, therefore we can effectively almost eliminate the spatial chirp and improve the beam quality of a high-power Ti:sapphire chirped pulse amplifier system. (paper)

Switched-capacitor multiply-by-two amplifier with reduced capacitor mismatches sensitivity and full swing sample signal common-mode voltage

International Nuclear Information System (INIS)

Xu Xinnan; Yao Suying; Xu Jiangtao; Nie Kaiming

2012-01-01

A switched-capacitor amplifier with an accurate gain of two that is insensitive to component mismatch is proposed. This structure is based on associating two sets of two capacitors in cross series during the amplification phase. This circuit permits the common-mode voltage of the sample signal to reach full swing. Using the charge-complement technique, the proposed amplifier can reduce the impact of parasitic capacitors on the gain accuracy effectively. Simulation results show that as sample signal common-mode voltage changes, the difference between the minimum and maximum gain error is less than 0.03%. When the capacitor mismatch is increased from 0 to 0.2%, the gain error is deteriorated by 0.00015%. In all simulations, the gain of amplifier is 69 dB. (semiconductor integrated circuits)

Spectroscopic amplifier for pin diode

International Nuclear Information System (INIS)

Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R.

2014-10-01

The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

Detection of weak optical signals with a laser amplifier

International Nuclear Information System (INIS)

Kozlovskii, A. V.

2006-01-01

Detection of weak and extremely weak light signals amplified by linear and four-wave mixing laser amplifiers is analyzed. Photoelectron distributions are found for different input photon statistics over a wide range of gain. Signal-to-noise ratios are calculated and analyzed for preamplification schemes using linear and four-wave mixing amplifiers. Calculations show that the high signal-to-noise ratio (much higher than unity), ensuring reliable detection of weak input signals, can be attained only with a four-wave mixing preamplification scheme. Qualitative dependence of the signal-to-noise ratio on the quantum statistical properties of both signal and idler waves is demonstrated

A Cost-Effective Amplifier for Electromagnetic Field Strength Measurement

National Research Council Canada - National Science Library

Rusek, A

2001-01-01

.... This paper presents an inexpensive broadband amplifier designed to increase the overall gain of a measurement system consisting of a 50 ohm broadband antenna coupled to a 50 ohm input spectrum analyzer...

Design and analysis of high gain and low noise figure CMOS low noise amplifier for Q-band nano-sensor application

Science.gov (United States)

Suganthi, K.; Malarvizhi, S.

2018-03-01

A high gain, low power, low Noise figure (NF) and wide band of milli-meter Wave (mmW) circuits design at 50 GHz are used for Radio Frequency (RF) front end. The fundamental necessity of a receiver front-end includes perfect output and input impedance matching and port-to-port isolation with high gain and low noise over the entire band of interest. In this paper, a design of Cascade-Cascode CMOS LNA circuit at 50 GHz for Q-band application is proposed. The design of Low noise amplifier at 50 GHz using Agilent ADS tool with microstrip lines which provides simplicity in fabrication and less chip area. The low off-leakage current Ioff can be maintained with high K-dielectrics CMOS structure. Nano-scale electronics can be achieved with increased robustness. The design has overall gain of 11.091 dB and noise figure of 2.673 dB for the Q-band of 48.3 GHz to 51.3 GHz. Impedance matching is done by T matching network and the obtained input and output reflection coefficients are S11 = <-10 dB and S22 = <-10 dB. Compared to Silicon (Si) material, Wide Band Gap semiconductor materials used attains higher junction temperatures which is well matched to ceramics used in packaging technology, the protection and reliability also can be achieved with the electronic packaging. The reverse transmission coefficient S21 is less than -21 dB has shown that LNA has better isolation between input and output, Stability factor greater than 1 and Power is also optimized in this design. Layout is designed, power gain of 4.6 dB is achieved and area is optimized which is nearly equal to 502 740 μm2. The observed results show that the proposed Cascade-Cascode LNA design can find its suitability in future milli-meter Wave Radar application.

Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications

KAUST Repository

Shen, Chao

2018-02-14

GaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is an essential building block yet to be demonstrated for III-nitride photonic integrated circuits (PICs) at visible wavelength. This paper presents the InGaN/GaN quantum well (QW) based dual-section LD consisting of integrated amplifier and laser gain regions fabricated on a semipolar GaN substrate. The threshold current in the laser gain region was favorably reduced from 229mA to 135mA at SOA driving voltages, VSOA, of 0V and 6.25V, respectively. The amplification effect was measured based on a large gain of 5.7 dB at VSOA = 6.25V from the increased optical output power of 8.2 mW to 30.5 mW. Such integrated amplifier can be modulated to achieve Gbps data communication using on-off keying technique. The monolithically integrated amplifier-LD paves the way towards the III-nitride on-chip photonic system, providing a compact, low-cost, and multi-functional solution for applications such as smart lighting and visible light communications.

Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications

KAUST Repository

Shen, Chao; Ng, Tien Khee; Lee, Changmin; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2018-01-01

GaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is an essential building block yet to be demonstrated for III-nitride photonic integrated circuits (PICs) at visible wavelength. This paper presents the InGaN/GaN quantum well (QW) based dual-section LD consisting of integrated amplifier and laser gain regions fabricated on a semipolar GaN substrate. The threshold current in the laser gain region was favorably reduced from 229mA to 135mA at SOA driving voltages, VSOA, of 0V and 6.25V, respectively. The amplification effect was measured based on a large gain of 5.7 dB at VSOA = 6.25V from the increased optical output power of 8.2 mW to 30.5 mW. Such integrated amplifier can be modulated to achieve Gbps data communication using on-off keying technique. The monolithically integrated amplifier-LD paves the way towards the III-nitride on-chip photonic system, providing a compact, low-cost, and multi-functional solution for applications such as smart lighting and visible light communications.

Channel addition/removal response in all-optical gain-clamped lumped Raman fiber amplifier

Czech Academy of Sciences Publication Activity Database

Karásek, Miroslav; Kaňka, Jiří; Honzátko, Pavel; Radil, J.

2004-01-01

Roč. 16, č. 3 (2004), s. 771-773 ISSN 1041-1135 Institutional research plan: CEZ:AV0Z2067918 Keywords : optical communication * optical fibre amplifiers * wavelength division multiplexing Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.552, year: 2004

An Electronically Tunable Transconductance Amplifier for Use in Auditory Prostheses

Directory of Open Access Journals (Sweden)

FARAGO, P.

2015-11-01

Full Text Available Low-voltage and low-power trends in analog electronics enable novel features in modern bio-medical devices, such as extensive portability, autonomy and even battery-less operation. One specific example is the cochlear implant (CI, which emulates the physiology of hearing to produce auditory sensations via neural stimulation. Besides low-voltage and low-power operation, a key feature in modern CIs is wide-range programmability of the speech processing parameters. This paper proposes an operational transconductance amplifier (OTA for use in CIs, with wide-range electronic tuning of the transconductance value. The proposed OTA is developed around a cascade of two transconductor stages, making the transconductance dependent on the bias current ratio. A combination of linearization techniques: bulk input, parallel differential pairs and feedback, is used to achieve sufficient linear range for CI speech processing. Wide-range parameter tuning of the speech processing sections is illustrated on a variable gain amplifier, a bandpass Tow-Thomas biquad and an envelope detector. Finally, the complete CI speech processing chain is illustrated. The proposed OTA and its employment in CI analog speech processing are validated on a 350 nm CMOS process.

Amplifier Design for Proportional Ionization Chambers

Energy Technology Data Exchange (ETDEWEB)

Baker, W. H.

1950-08-24

This paper presents the requirements of a nuclear amplifier of short resolving time, designed to accept pulses of widely varying amplitudes. Data are given which show that a proportional ionization chamber loaded with a 1,000-ohm resistor develops pulses of 0.5 microsecond duration and several volts amplitude. Results indicate that seven basic requirements are imposed on the amplifier when counting soft beta and gamma radiation in the presence of alpha particles, without absorbers. It should, (1) have a fast recovery time, (2) have a relatively good low frequency response, (3) accept pulses of widely varying heights without developing spurious pulsed, (4) have a limiting output stage, (5) preserve the inherently short rise time of the chamber, (6) minimize pulse integration, and (7) have sufficient gain to detect the weak pulses well below the chamber voltage at which continuous discharge takes place. The results obtained with an amplifier which meets these requirements is described. A formula is derived which indicates that redesign of the proportional ionization chamber might eliminate the need for an amplifier. This may be possible if the radioactive particles are collimated parallel to the collecting electrode.

Erbium-doped integrated waveguide amplifiers and lasers

NARCIS (Netherlands)

Bradley, J.; Pollnau, Markus

Erbium-doped fiber devices have been extraordinarily successful due to their broad optical gain around 1.5–1.6 μm. Er-doped fiber amplifiers enable efficient, stable amplification of high-speed, wavelength-division-multiplexed signals, thus continue to dominate as part of the backbone of longhaul

Parametric Amplifiers for Microwave Kinectic Inductance Detector (MKID) Readout

Data.gov (United States)

National Aeronautics and Space Administration — Build a microwave amplifier with near quantum-limited sensitivity, octave or greater bandwidth, gain > 20 dB for input signals in the frequency range 1 – 10 GHz,...

Ytterbium-doped large-mode-area photonic crystal fiber amplifier with gain shaping for use at long wavelengths

DEFF Research Database (Denmark)

Petersen, Sidsel Rübner; Alkeskjold, Thomas T.; Poli, Federica

2012-01-01

A large-mode-area Ytterbium-doped photonic crystal fiber amplifier with efficient suppression of amplified spontaneous emission is presented. The fiber cladding consists of a hexagonal lattice of air holes, where three rows are replaced with circular high-index inclusions. Seven missing air holes...

A > 4 MGy radiation tolerant 8 THzOhm transimpedance amplifier with 50 dB dynamic range

International Nuclear Information System (INIS)

Verbeeck, J; Steyaert, M; Leroux, P

2013-01-01

A 130 nm Transimpedance Amplifier has been developed with a 255 MHz bandwidth, 90 dBΩ transimpedance gain and a dynamic input range of 1:325 or 50 dB for a photo-diode capacitance of 0.75 pF. The equivalent integrated input noise is 160 nA - 25°C. The gain of the voltage amplifier, used in the transimpedance amplifier (TIA), degrades less than 3% over a temperature range from -40 °C up to 125 °C. The TIA and attenuator exhibit a radiation tolerance larger than 4 MGy, as evidenced by radiation assessment.

Laser amplifier based on a neodymium glass rod 150 mm in diameter

Energy Technology Data Exchange (ETDEWEB)

Shaykin, A A; Fokin, A P; Soloviev, A A; Kuzmin, A A; Shaikin, I A; Burdonov, K F; Khazanov, E A [Institute of Applied Physics, Russian Academy of Sciences, Nizhnii Novgorod (Russian Federation); Charukhchev, A V [Public Limited Company " Scientific research Institute for Optoelectronic Instrument Engineering" , Leningrad region (Russian Federation)

2014-05-30

A unique large-aperture neodymium glass rod amplifier is experimentally studied. The small-signal gain distribution is measured at different pump energies. The aperture-averaged gain is found to be 2.3. The stored energy (500 J), the maximum possible pump pulse repetition rate, and the depolarisation in a single pulse and in a series of pulses with a repetition rate of one pulse per five minutes are calculated based on the investigations performed. It is shown that the use of this amplifier at the exit of the existing laser can increase the output pulse energy from 300 to 600 J. (lasers)

A high-power two stage traveling-wave tube amplifier

International Nuclear Information System (INIS)

Shiffler, D.; Nation, J.A.; Schachter, L.; Ivers, J.D.; Kerslick, G.S.

1991-01-01

Results are presented on the development of a two stage high-efficiency, high-power 8.76-GHz traveling-wave tube amplifier. The work presented augments previously reported data on a single stage amplifier and presents new data on the operational characteristics of two identical amplifiers operated in series and separated from each other by a sever. Peak powers of 410 MW have been obtained over the complete pulse duration of the device, with a conversion efficiency from the electron beam to microwave energy of 45%. In all operating conditions the severed amplifier showed a ''sideband''-like structure in the frequency spectrum of the microwave radiation. A similar structure was apparent at output powers in excess of 70 MW in the single stage device. The frequencies of the ''sidebands'' are not symmetric with respect to the center frequency. The maximum, single frequency, average output power was 210 MW corresponding to an amplifier efficiency of 24%. Simulation data is also presented that indicates that the short amplifiers used in this work exhibit significant differences in behavior from conventional low-power amplifiers. These include finite length effects on the gain characteristics, which may account for the observed narrow bandwidth of the amplifiers and for the appearance of the sidebands. It is also found that the bunching length for the beam may be a significant fraction of the total amplifier length

Variation method for optimization of Raman fiber amplifier pumped by continuous-spectrum radiation

International Nuclear Information System (INIS)

Ghasempour Ardekani, A.; Bahrampour, A. R.; Feizpour, A.

2007-01-01

In Raman fiber amplifiers, reduction of gain ripple versus frequency has a great importance. In this article using variational method and continuous pump, gain ripple is optimized. It is shown here that for a 40 km line the average gain is 1.3dB and the gain ripple is 0.12 dB, that is lower than the latest published data.

Enhanced Gain in Slow-Light Photonic Crystal Waveguides with Embedded Quantum Dots

DEFF Research Database (Denmark)

Ek, Sara; Hansen, Per Lunnemann; Semenova, Elizaveta

2011-01-01

We experimentally demonstrate enhanced gain in the slow-light regime of quantum dot photonic crystal waveguide slabs. These are promising results for future compact devices for terabit/s communication, such as compact optical amplifiers and mode-locked lasers.......We experimentally demonstrate enhanced gain in the slow-light regime of quantum dot photonic crystal waveguide slabs. These are promising results for future compact devices for terabit/s communication, such as compact optical amplifiers and mode-locked lasers....

Dynamic range enhancement and amplitude regeneration in single pump fibre optic parametric amplifiers using DPSK modulation

DEFF Research Database (Denmark)

Peucheret, Christophe; Lorenzen, Michael Rodas; Seoane, Jorge

2008-01-01

Input power dynamic range enhancement and amplitude regeneration of highly distorted signals are demonstrated experimentally for 40 Gbit/s RZ-DPSK in a single-pump fibre parametric amplifier with 22 dB smallsignal gain.......Input power dynamic range enhancement and amplitude regeneration of highly distorted signals are demonstrated experimentally for 40 Gbit/s RZ-DPSK in a single-pump fibre parametric amplifier with 22 dB smallsignal gain....

Traveling wave parametric amplifier with Josephson junctions using minimal resonator phase matching

International Nuclear Information System (INIS)

White, T. C.; Mutus, J. Y.; Hoi, I.-C.; Barends, R.; Campbell, B.; Chen, Yu; Chen, Z.; Chiaro, B.; Dunsworth, A.; Jeffrey, E.; Kelly, J.; Neill, C.; O'Malley, P. J. J.; Roushan, P.; Sank, D.; Vainsencher, A.; Wenner, J.; Martinis, John M.; Megrant, A.; Chaudhuri, S.

2015-01-01

Josephson parametric amplifiers have become a critical tool in superconducting device physics due to their high gain and quantum-limited noise. Traveling wave parametric amplifiers (TWPAs) promise similar noise performance, while allowing for significant increases in both bandwidth and dynamic range. We present a TWPA device based on an LC-ladder transmission line of Josephson junctions and parallel plate capacitors using low-loss amorphous silicon dielectric. Crucially, we have inserted λ/4 resonators at regular intervals along the transmission line in order to maintain the phase matching condition between pump, signal, and idler and increase gain. We achieve an average gain of 12 dB across a 4 GHz span, along with an average saturation power of −92 dBm with noise approaching the quantum limit

32-core Inline Multicore Fiber Amplifier for Dense Space Division Multiplexed Transmission Systems

DEFF Research Database (Denmark)

Jain, S.; Mizuno, T.; Jung, Y.

2016-01-01

We present a high-core-count SDM amplifier, i.e. 32-core multicore-fiber amplifier, in a cladding-pumped configuration. An average gain of 17dB and NF of 7dB is obtained for -5dBm input signal power in the wavelength range 1544nm-1564nm....

A CMOS-MEMS clamped–clamped beam displacement amplifier for resonant switch applications

Science.gov (United States)

Liu, Jia-Ren; Lu, Shih-Chuan; Tsai, Chun-Pu; Li, Wei-Chang

2018-06-01

This paper presents a micromechanical clamped–clamped beam (CC-beam) displacement amplifier based on a CMOS-MEMS fabrication process platform. In particular, a 2.0 MHz resonant displacement amplifier composed of two identical CC-beams coupled by a mechanical beam at locations where the two beams have mismatched velocities exhibits a larger displacement, up to 9.96×, on one beam than that of the other. The displacement amplification prevents unwanted input impacting—the structure switches only to the output but not the input—required by resonant switch-based mechanical circuits (Kim et al 2009 22nd IEEE Int. Conf. on Micro Electro Mechanical Systems; Lin et al 2009 15th Int. Conf. on Solid-State Sensors, Actuators, & Microsystems (TRANSDUCERS’09) Li et al 2013 17th Int. Conf. on Solid-State Sensors, Actuators, & Microsystems (TRANSDUCERS’13)). Compared to a single CC-beam displacement amplifier, theory predicts that the displacement amplifying CC-beam array yields a larger overall output displacement for displacement gain beyond 1.13 thanks to the preserved input driving force. A complete analytical model predicts the resultant stiffness and displacement gain of the coupled CC-beam displacement amplifier that match well with finite element analysis (FEA) prediction and measured results.

Amplifying modeling for broad bandwidth pulse in Nd:glass based on hybrid-broaden mechanism

International Nuclear Information System (INIS)

Sujingqin; Lanqin, L; Wenyi, W; Feng, J; Xiaofeng, W; Xiaomin, Z; Bin, L

2008-01-01

In this paper, the cross relaxation time is proposed to combine the homogeneous and inhomogeneous broaden mechanism for broad bandwidth pulse amplification model. The corresponding velocity equation, which can describe the response of inverse population on upper and low energy level of gain media to different frequency of pulse, is also put forward. The gain saturation and energy relaxation effect are also included in the velocity equation. Code named CPAP has been developed to simulate the amplifying process of broad bandwidth pulse in multi-pass laser system. The amplifying capability of multi-pass laser system is evaluated and gain narrowing and temporal shape distortion are also investigated when bandwidth of pulse and cross relaxation time of gain media are different. Results can benefit the design of high-energy PW laser system in LFRC, CAEP

Amplifying modeling for broad bandwidth pulse in Nd:glass based on hybrid-broaden mechanism

Energy Technology Data Exchange (ETDEWEB)

Sujingqin; Lanqin, L; Wenyi, W; Feng, J; Xiaofeng, W; Xiaomin, Z [Research Center of Laser Fusion, China Academy of Engineering Physics, P. O. Box 919-988, Mianyang, China, 621900 (China); Bin, L [School of Computer and Communication Engineering, Southwest Jiaotong University, Chengdu. China, 610031 (China)], E-mail: sujingqin@tom.com

2008-05-15

In this paper, the cross relaxation time is proposed to combine the homogeneous and inhomogeneous broaden mechanism for broad bandwidth pulse amplification model. The corresponding velocity equation, which can describe the response of inverse population on upper and low energy level of gain media to different frequency of pulse, is also put forward. The gain saturation and energy relaxation effect are also included in the velocity equation. Code named CPAP has been developed to simulate the amplifying process of broad bandwidth pulse in multi-pass laser system. The amplifying capability of multi-pass laser system is evaluated and gain narrowing and temporal shape distortion are also investigated when bandwidth of pulse and cross relaxation time of gain media are different. Results can benefit the design of high-energy PW laser system in LFRC, CAEP.

Carrier dynamics in inhomogeneously broadened InAs/AlGaInAs/InP quantum-dot semiconductor optical amplifiers

Energy Technology Data Exchange (ETDEWEB)

Karni, O., E-mail: oulrik@tx.technion.ac.il; Mikhelashvili, V.; Eisenstein, G. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Kuchar, K. J. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); Institute of Physics, Wroclaw University of Technology, Wroclaw 50-370 (Poland); Capua, A. [Electrical Engineering Department, Technion—Israel Institute of Technology, Haifa 32000 (Israel); IBM Almaden Research Center, San Jose, 95120 California (United States); Sęk, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wroclaw 50-370 (Poland); Ivanov, V.; Reithmaier, J. P. [Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Kassel D-34132 (Germany)

2014-03-24

We report on a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers. Multi-wavelength pump-probe measurements were used to determine gain recovery rates, following a powerful optical pump pulse, at various wavelengths for different bias levels and pump excitation powers. The recovery was dominated by coupling between the electronic states in the quantum-dots and the high energy carrier reservoir via capture and escape mechanisms. These processes determine also the wavelength dependencies of gain saturation depth and the asymptotic gain recovery level. Unlike quantum-dash amplifiers, these quantum-dots exhibit no instantaneous gain response, confirming their quasi zero-dimensional nature.

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

DEFF Research Database (Denmark)

Berg, Tommy Winther; Bischoff, Svend; Magnúsdóttir, Ingibjörg

2001-01-01

Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers are explained by a comprehensive numerical model. The on excited state carriers are found to act as a reservoir for the optically active ground state carriers resulting in an ultrafast gain recovery as long...... as the excited state is well populated. However, when pulses are injected into the device at high-repetition frequencies, the response of a on amplifier is found to be limited by the wetting-layer dynamics....

Nonlinear model-based robust control of a nuclear reactor using adaptive PIF gains and variable structure controller

International Nuclear Information System (INIS)

Park, Moon Ghu; Cho, Nam Zin

1993-01-01

A Nonlinear model-based Hybrid Controller (NHC) is developed which consists of the adaptive proportional-integral-feedforward (PIF) gains and variable structure controller. The controller has the robustness against modeling uncertainty and is applied to the trajectory tracking control of single-input, single-output nonlinear systems. The essence of the scheme is to divide the control into four different terms. Namely, the adaptive P-I-F gains and variable structure controller are used to accomplish the specific control actions by each terms. The robustness of the controller is guaranteed by the feedback of estimated uncertainty and the performance specification given by the adaptation of PIF gains using the second method of Lyapunov. The variable structure controller is incorporated to regulate the initial peak of the tracking error during the parameter adaptation is not settled yet. The newly developed NHC method is applied to the power tracking control of a nuclear reactor and the simulation results show great improvement in tracking performance compared with the conventional model-based control methods. (Author)

Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

Science.gov (United States)

England, Troy; Lilly, Michael; Curry, Matthew; Carr, Stephen; Carroll, Malcolm

Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will introduce two new amplifier topologies that provide excellent gain versus power tradeoffs using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). The AC HBT allows in-situ adjustment of power dissipation during an experiment and can provide gain in the millikelvin temperature regime while dissipating less than 500 nW. The AC Current Amplifier maximizes gain at nearly 800 A/A. We will also show results of using these amplifiers with SETs at 4 K. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. Flexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout.

Analysis of dynamic pump-loss controlled gain-locking system for erbium-doped fiber amplifiers

Czech Academy of Sciences Publication Activity Database

Karásek, Miroslav; Plaats van der, J.C.

1998-01-01

Roč. 10, č. 8 (1998), s. 1171-1173 ISSN 1041-1135 Grant - others:EU COST(XE) OC 241.10 Keywords : optical communication * amplifiers * fibre lasers Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.791, year: 1998

Investigation of switching frequency variations and EMI properties in self-oscillating class D amplifiers

OpenAIRE

Nielsen, Dennis; Knott, Arnold; Pfaffinger, Gerhard; Andersen, Michael A. E.

2009-01-01

Class D audio amplifiers have gained significant influence in sound reproduction due to their high efficiency. One of the most commonly used control methods in these amplifiers is self-oscillation. A parameter of key interest in self-oscillating amplifiers is the switching frequency, which is known for its variation. Knowledge of switching frequency variations is of great importance with respect to electromagnetic interference (EMI). This paper will investigate, whether the switching frequenc...

Phase noise in RF and microwave amplifiers.

Science.gov (United States)

Boudot, Rodolphe; Rubiola, Enrico

2012-12-01

Understanding amplifier phase noise is a critical issue in many fields of engineering and physics, such as oscillators, frequency synthesis, telecommunication, radar, and spectroscopy; in the emerging domain of microwave photonics; and in exotic fields, such as radio astronomy, particle accelerators, etc. Focusing on the two main types of base noise in amplifiers, white and flicker, the power spectral density of the random phase φ(t) is Sφ(f) = b(0) + b(-1)/f. White phase noise results from adding white noise to the RF spectrum in the carrier region. For a given RF noise level, b(0) is proportional to the reciprocal of the carrier power P(0). By contrast, flicker results from a near-dc 1/f noise-present in all electronic devices-which modulates the carrier through some parametric effect in the semiconductor. Thus, b(-1) is a parameter of the amplifier, constant in a wide range of P(0). The consequences are the following: Connecting m equal amplifiers in parallel, b(-1) is 1/m times that of one device. Cascading m equal amplifiers, b(-1) is m times that of one amplifier. Recirculating the signal in an amplifier so that the gain increases by a power of m (a factor of m in decibels) as a result of positive feedback (regeneration), we find that b(-1) is m(2) times that of the amplifier alone. The feedforward amplifier exhibits extremely low b(-1) because the carrier is ideally nulled at the input of its internal error amplifier. Starting with an extensive review of the literature, this article introduces a system-oriented model which describes the phase flickering. Several amplifier architectures (cascaded, parallel, etc.) are analyzed systematically, deriving the phase noise from the general model. There follow numerous measurements of amplifiers using different technologies, including some old samples, and in a wide frequency range (HF to microwaves), which validate the theory. In turn, theory and results provide design guidelines and give suggestions for CAD and

Exponential gain of randomness certified by quantum contextuality

Science.gov (United States)

Um, Mark; Zhang, Junhua; Wang, Ye; Wang, Pengfei; Kim, Kihwan

2017-04-01

We demonstrate the protocol of exponential gain of randomness certified by quantum contextuality in a trapped ion system. The genuine randomness can be produced by quantum principle and certified by quantum inequalities. Recently, randomness expansion protocols based on inequality of Bell-text and Kochen-Specker (KS) theorem, have been demonstrated. These schemes have been theoretically innovated to exponentially expand the randomness and amplify the randomness from weak initial random seed. Here, we report the experimental evidence of such exponential expansion of randomness. In the experiment, we use three states of a 138Ba + ion between a ground state and two quadrupole states. In the 138Ba + ion system, we do not have detection loophole and we apply a methods to rule out certain hidden variable models that obey a kind of extended noncontextuality.

Gain-clamping techniques in two-stage double-pass L-band EDFA

Indian Academy of Sciences (India)

Two designs of long-wavelength band erbium-doped fiber amplifier (L-band. EDFA) for gain clamping in double-pass systems are demonstrated and compared. The first design is based on ring laser technique where a backward amplified spontaneous emis- sion (ASE) from the second stage is routed into the feedback loop ...

Optimization of Pr3+:ZBLAN fiber amplifiers

DEFF Research Database (Denmark)

Pedersen, B.; Miniscalco, J. W.; Quimby, R. S.

1992-01-01

Experimental parameters have been measured and used in a quantitative model of Pr3+-doped fluorozirconate fiber amplifiers. The optimum cutoff wavelength was determined to be 800 nm and the gain for 400 mW of pump was found to increase from 12 to 34 dB if the NA was increased from 0.15 to 0...

100J-level nanosecond pulsed Yb:YAG cryo-cooled DPSSL amplifier

Science.gov (United States)

Smith, J. M.; Butcher, T. J.; Mason, P. D.; Ertel, K.; Phillips, P. J.; Banerjee, S.; De Vido, M.; Chekhlov, O.; Divoky, M.; Pilar, J.; Shaikh, W.; Hooker, C.; Lucianetti, A.; Hernandez Gomez, C.; Mocek, T.; Edwards, C.; Collier, J. L.

2018-02-01

We report on the successful demonstration of the world's first kW average power, 100 Joule-class, high-energy, nanosecond pulsed diode-pumped solid-state laser (DPSSL), DiPOLE100. Results from the first long-term test for amplification will be presented; the system was operated for 1 hour with 10 ns duration pulses at 10 Hz pulse repetition rate and an average output energy of 105 J and RMS energy stability of approximately 1%. The laser system is based on scalable cryogenic gas-cooled multi-slab ceramic Yb:YAG amplifier technology. The DiPOLE100 system comprises three major sub-systems, a spatially and temporally shaped front end, a 10 J cryo-amplifier and a 100 J cryo-amplifier. The 10 J cryo-amplifier contain four Yb:YAG ceramic gain media slabs, which are diode pumped from both sides, while a multi-pass architecture configured for seven passes enables 10 J of energy to be extracted at 10 Hz. This seeds the 100 J cryo-amplifier, which contains six Yb:YAG ceramic gain media slabs with the multi-pass configured for four passes. Our future development plans for this architecture will be introduced including closed-loop pulse shaping, increased energy, higher repetition rates and picosecond operation. This laser architecture unlocks the potential for practical applications including new sources for industrial materials processing and high intensity laser matter studies as envisioned for ELI [1], HiLASE [2], and the European XFEL [3]. Alternatively, it can be used as a pump source for higher repetition rate PW-class amplifiers, which can themselves generate high-brightness secondary radiation and ion sources leading to new remote imaging and medical applications.

Multimegawatt relativistic harmonic gyrotron traveling-wave tube amplifier experiments

International Nuclear Information System (INIS)

Menninger, W.L.; Danly, B.G.; Temkin, R.J.

1996-01-01

The first multimegawatt harmonic relativistic gyrotron traveling-wave tube (gyro-twt) amplifier experiment has been designed, built, and tested. Results from this experimental setup, including the first ever reported third-harmonic gyro-twt results, are presented. Operation frequency is 17.1 GHz. Detailed phase measurements are also presented. The electron beam source is SNOMAD-II, a solid-state nonlinear magnetic accelerator driver with nominal parameters of 400 kV and 350 A. The flat-top pulsewidth is 30 ns. The electron beam is focused using a Pierce geometry and then imparted with transverse momentum using a bifilar helical wiggler magnet. Experimental operation involving both a second-harmonic interaction with the TE 21 mode and a third-harmonic interaction with the TE 31 mode, both at 17 GHz, has been characterized. The third-harmonic interaction resulted in 4-MW output power and 50-dB single-pass gain, with an efficiency of up to ∼8%. The best measured phase stability of the TE 31 amplified pulse was ±10 degree over a 9-ns period. The phase stability was limited because the maximum RF power was attained when operating far from wiggler resonance. The second harmonic, TE 21 had a peak amplified power of 2 MW corresponding to 40-dB single-pass gain and 4% efficiency. The second-harmonic interaction showed stronger superradiant emission than the third-harmonic interaction. Characterizations of the second- and third-harmonic gyro-twt experiments presented here include measurement of far-field radiation patterns, gain and phase versus interaction length, phase stability, and output power versus input power

Fiber Amplifiers

DEFF Research Database (Denmark)

Rottwitt, Karsten

2017-01-01

The chapter provides a discussion of optical fiber amplifiers and through three sections provides a detailed treatment of three types of optical fiber amplifiers, erbium doped fiber amplifiers (EDFA), Raman amplifiers, and parametric amplifiers. Each section comprises the fundamentals including...... the basic physics and relevant in-depth theoretical modeling, amplifiers characteristics and performance data as a function of specific operation parameters. Typical applications in fiber optic communication systems and the improvement achievable through the use of fiber amplifiers are illustrated....

Method and system for edge cladding of laser gain media

Science.gov (United States)

Bayramian, Andrew James; Caird, John Allyn; Schaffers, Kathleen Irene

2014-03-25

A gain medium operable to amplify light at a gain wavelength and having reduced transverse ASE includes an input surface and an output surface opposing the input surface. The gain medium also includes a central region including gain material and extending between the input surface and the output surface along a longitudinal optical axis of the gain medium. The gain medium further includes an edge cladding region surrounding the central region and extending between the input surface and the output surface along the longitudinal optical axis of the gain medium. The edge cladding region includes the gain material and a dopant operable to absorb light at the gain wavelength.

Solid state high power amplifier for driving the SLC injector klystron

International Nuclear Information System (INIS)

Judkins, J.G.; Clendenin, J.E.; Schwarz, H.D.

1985-03-01

The SLC injector klystron rf drive is now provided by a recently developed solid-state amplifier. The high gain of the amplifier permits the use of a fast low-power electronic phase shifter. Thus the SLC computer control system can be used to shift the phase of the high-power rf rapidly during the fill time of the injector accelerator section. These rapid phase shifts are used to introduce a phase-energy relationship in the accelerated electron pulse in conjunction with the operation of the injector bunch compressor. The amplifier, the method of controlling the rf phase, and the operational characteristics of the system are described. 5 refs., 4 figs

Designs of two and three cavity gyroklystron amplifiers operating at fundamental, second, and fourth harmonics

International Nuclear Information System (INIS)

Saraph, G.P.; Lawson, W.; Latham, P.E.; Cheng, J.; Castle, M.

1995-01-01

Two and three cavity, co-axial, relativistic gyroklystron amplifiers are investigated for driving future linear colliders. Detailed designs of gyroklystrons operating at fundamental (8.568 GHz), second (17.136 GHz), and fourth harmonic (34.272 GHz) frequencies are presented. Numerical simulations predict over 40% efficiency, 45-50 dB gain, and 100-160 MW power level for the fundamental and second harmonic designs. It is shown that introducing a penultimate (buncher) cavity significantly improves efficiency and gain of the second harmonic amplifier. The fourth harmonic design has a modest efficiency of 10-15%

Analogue frontend amplifiers for bio-potential measurements manufactured with a-IGZO TFTs on flexible substrate

NARCIS (Netherlands)

Garripoli, C.; van der Steen, J.L.; Torricelli, F.; Ghittorelli, M.; Gelinck, G.H.; Van Roermund, A.H.M.; Cantatore, E.

2017-01-01

Three novel differential amplifier topologies using double gate a-IGZO TFTs on flexible substrate are presented in this paper. The designs exploit positive feedback and a load with self-biased top gate to achieve the highest static gain in single stage a-IGZO amplifiers reported to date. After

An 11 μ w, two-electrode transimpedance biosignal amplifier with active current feedback stabilization.

Science.gov (United States)

Inan, O T; Kovacs, G T A

2010-04-01

A novel two-electrode biosignal amplifier circuit is demonstrated by using a composite transimpedance amplifier input stage with active current feedback. Micropower, low gain-bandwidth product operational amplifiers can be used, leading to the lowest reported overall power consumption in the literature for a design implemented with off-the-shelf commercial integrated circuits (11 μW). Active current feedback forces the common-mode input voltage to stay within the supply rails, reducing baseline drift and amplifier saturation problems that can be present in two-electrode systems. The bandwidth of the amplifier extends from 0.05-200 Hz and the midband voltage gain (assuming an electrode-to-skin resistance of 100 kΩ) is 48 dB. The measured output noise level is 1.2 mV pp, corresponding to a voltage signal-to-noise ratio approaching 50 dB for a typical electrocardiogram (ECG) level input of 1 mVpp. Recordings were taken from a subject by using the proposed two-electrode circuit and, simultaneously, a three-electrode standard ECG circuit. The residual of the normalized ensemble averages for both measurements was computed, and the power of this residual was 0.54% of the power of the standard ECG measurement output. While this paper primarily focuses on ECG applications, the circuit can also be used for amplifying other biosignals, such as the electroencephalogram.

High efficiency class-I audio power amplifier using a single adaptive supply

International Nuclear Information System (INIS)

Peng Zhenfei; Yang Shanshand; Feng Yong; Hong Zhiliang; Liu Yang

2012-01-01

A high efficiency class-I linear audio power amplifier (PA) with an adaptive supply is presented. Its efficiency is improved by a dynamic supply to reduce the power transistors' voltage drop. A gain compression technique is adopted to make the amplifier accommodate a single positive supply. Circuit complicity and chip area are reduced because no charge pump is necessary for the negative supply. A common shared mode voltage and a symmetric layout pattern are used to minimize the non-linearity. A peak efficiency of 80% is reached at peak output power. The measured THD+N before and after the supply switching point are 0.01% and 0.05%, respectively. The maximum output power is 410 mW for an 8 Ω speaker load. Unlike switching amplifiers, the class-I amplifier operates as a linear amplifier and hence has a low EMI. The advantage of a high efficiency and low EMI makes the class-I amplifier suitable for portable and RF sensitive applications. (semiconductor integrated circuits)

Analysis and evaluation of the power amplifier device

Energy Technology Data Exchange (ETDEWEB)

Kim, Y. K.; Ryu, J. W. [Kongju National University, Gongju (Korea, Republic of)

2011-11-15

We developed a master oscillator power amplifier (MOPA) type fiber amplifier for the separation of the Ca-48 isotope by using a fiber laser. The ytterbium (Yb)-doped end-capped rod-type photonic crystal fiber (PCF) was used as a gain medium of MOPA amplifier. The PCFs used in our experiments were a 56-cm and an 81-cm rod-type end-capped Yb-doped double-clad PM fibers 'DC-285/100-PM-Yb-Rod', with a 100-{mu}m core (NA 0.02) and a 285-{mu}m cladding (NA 0.6) fabricated by NKT Photonics. The mode field diameter (MFD) of the rod-type PCF was 75-{mu}m, and an absorption efficiency of 30 dB/m at 976 nm and a low NA 0.02 helped to sustain the excellent lasing beam quality. We obtained an output power of 112 W at a pump power of 380 W with a repetition rate of 150 kHz. The measured pulse width was 13 ns at 150 kHz, 1056 nm. The laser beam quality shows a single mode amplification characteristics with a beam quality factor values of M2 are 2 -3. The PCF launching efficiency reached a maximum value of 86.7% with an average efficiencies of above 80%. At a pump power of 250 W and seed power input of 4 W, the CW PCF amplifier was found to generate average output powers of 138 W, 110 W, and 82 W at 1056-nm, 1070-nm, and 1089-nm wavelengths, respectively. The amplified PCF output beam had a line width of 70 MHz full width at half maximum (FWHM). These PCF amplified beams had good beam qualities with M2values of less than 1.8 at all three wavelengths. The gain saturation seed input power in the 81-cm PCF was found to be {approx}6 W at 1056 nm. The temperature of the PCF core reached over 230 .deg. C at the pumping section of the PCF. The temperatures of the end-cap heads on both the pumping and the output end-cap sides were 81.4 .deg. C and 35.7 .deg. C, respectively. The PCF amplifier maintained good polarization mode characteristics with an average DOP of over 87%. The slight decrease in the DOP oat output powers over 170 W output power may have been caused by a

A fast large dynamic range shaping amplifier for particle detector front-end

International Nuclear Information System (INIS)

Rivetti, Angelo; Delaurenti, Paolo

2007-01-01

The paper describes a fast shaping amplifier with rail-to-rail output swing. The circuit is based on a CMOS operational amplifier with a class AB output stage. A baseline holder, incorporating a closed-loop unity gain buffer with slew rate limitation, performs the AC coupling with the preamplifier and guarantees a baseline shift smaller than 3 mV for unipolar output pulses of 3 V and 10 MHz rate

Ka-Band AlGaN/GaN HEMT high power and driver amplifier MMICs

NARCIS (Netherlands)

Heijningen, M. van; Vliet, F.E. van; Quay, R.; Raay, F. van; Kiefer, R.; Mueller, S.; Krausse, D.; Seelmann-Eggebert, M.; Mikulla, M.; Schlechtweg, M.

2005-01-01

In this paper the MMIC technology, design and characterization of a high power amplifier and driver amplifier MMIC at 30 GHz in AlGaN/GaN HEMT technology are presented. The MMICs are designed using CPW technology on a 390 μm thick SiC substrate. The measured small-signal gain of the driver is 14 dB

Millimeter wave free electron laser amplifiers: Experiments and designs

International Nuclear Information System (INIS)

Bidwell, S.W.; Zhang, Z.X.; Antonsen, T.M. Jr.; Bensen, D.M.; Destler, W.W.; Granatstein, V.L.; Lantham, P.E.; Levush, B.; Rodgers, J.

1991-01-01

Free electron laser amplifies are investigated as sources of high- average-power (1 MW) millimeter to submillimeter wave radiation (200 GHz - 600 GHz) for application to electron cyclotron resonance heating of magnetically confined fusion plasmas. As a stepping-stone to higher frequencies and cw operation a pulsed amplifier (τ pulse ≅ 80 ns) at 98 GHz is being developed. Status is reported on this experiment which investigates linear gain amplification with use of sheet electron beam (transverse cross section = 0.1 cm x 2.0 cm, V beam = 440 keV, I beam ≅ 10 A) and short-period wiggler (ell w = 0.96 cm) and with expected output of 140 W. Predictions of gain and efficiency from a 1-D universal formulation are presented. Beam propagation results, with wiggler focusing as a means of sheet beam confinement in both transverse dimensions, through the 54 cm (56 period) pulsed electromagnet wiggler are discussed. Peak wiggler fields of 5.1 kG on-axis have been achieved

Thermal and dynamic range characterization of a photonics-based RF amplifier

Science.gov (United States)

Noque, D. F.; Borges, R. M.; Muniz, A. L. M.; Bogoni, A.; Cerqueira S., Arismar, Jr.

2018-05-01

This work reports a thermal and dynamic range characterization of an ultra-wideband photonics-based RF amplifier for microwave and mm-waves future 5G optical-wireless networks. The proposed technology applies the four-wave mixing nonlinear effect to provide RF amplification in analog and digital radio-over-fiber systems. The experimental analysis from 300 kHz to 50 GHz takes into account different figures of merit, such as RF gain, spurious-free dynamic range and RF output power stability as a function of temperature. The thermal characterization from -10 to +70 °C demonstrates a 27 dB flat photonics-assisted RF gain over the entire frequency range under real operational conditions of a base station for illustrating the feasibility of the photonics-assisted RF amplifier for 5G networks.

Low-noise wide-band amplifiers for stochastic beam cooling experiments

International Nuclear Information System (INIS)

Leskovar, B.; Lo, C.C.

1982-01-01

Noise characteristics of the continuous-wave wide-band amplifier systems for stochastic beam cooling experiments are presented. Also, the noise performance, bandwidth capability and gain stability of components used in these amplifiers are summarized and compared in the 100 MHz to 40 GHz frequency range. This includes bipolar and field-effect transistors, parametric amplifier, Schottky diode mixer and maser. Measurements of the noise characteristics and scattering parameters of variety GaAs FETs as a function of ambient temperature are also given. Performance data and design information are presented on a broadband 150-500 MHz preamplifier having noise temperature of approximately 35 0 K at ambient temperature of 20 0 K. An analysis of preamplifier stability based on scattering parameters concept is included

Design and performance of the main amplifier system for the National Ignition Facility

International Nuclear Information System (INIS)

Beullier, J; Erlandson, A; Grebot, E; Guenet, J; Guenet, M; Horvath, J; Jancaitis, K; Larson, D; Lawson, J; LeTouze, G; Maille, X; Manes, K; Marshall, C; Mengue, T; Moor, E; Payne, S; Pedrotti, L; Rotter, M; Seznec, S; Sutton, S; Zapata, L.

1999-01-01

This paper describes the design and performance of flashlamp-pumped, Nd:glass. Brewster-angle slab amplifiers intended to be deployed in the National Ignition Facility (NIF). To verify performance, we tested a full-size, three-slab-long, NIF prototype amplifier, which we believe to be the largest flashlamp-pumped Nd:glass amplifier ever assembled. Like the NIF amplifier design, this prototype amplifier had eight 40-cm-square apertures combined in a four-aperture-high by two-aperture-wide matrix. Specially-shaped reflectors, anti-reflective coatings on the blastshields, and preionized flashlamps were used to increase storage efficiency. Cooling gas was flowed over the flashlamps to remove waste pump heat and to accelerate thermal wavefront recovery. The prototype gain results are consistent with model predictions and provide high confidence in the final engineering design of the NIF amplifiers. Although the dimensions, internal positions, and shapes of the components in the NIF amplifiers will be slightly different from the prototype, these differences are small and should produce only slight differences in amplifier performance

Ultrashort pulse-propagation effects in a semiconductor optical amplifier: Microscopic theory and experiment

DEFF Research Database (Denmark)

Hughes, S.; Borri, P.; Knorr, A.

2001-01-01

We present microscopic modeling and experimental measurements of femtosecond-pulse interactions in a semiconductor optical amplifier. Two novel nonlinear propagation effects are demonstrated: pulse breakup in the gain regime and pulse compression in the transparency regime. These propagation phen...... phenomena highlight the microscopic origin and important role of adiabatic following in semiconductor optical amplifiers. Fundamental light-matter interactions are discussed in detail and possible applications are highlighted....

Semiconductor optical amplifiers for the 1000-1100-nm spectral range

International Nuclear Information System (INIS)

Lobintsov, A A; Shramenko, M V; Yakubovich, S D

2008-01-01

Two types of semiconductor optical amplifiers (SOAs) based on a double-layer quantum-well (InGa)As/(GaAl)As/GaAs heterostructure are investigated. The optical gain of more than 30 dB and saturation output power of more than 30 mW are achived at 1060 nm in pigtailed SOA modules. These SOAs used as active elements of a tunable laser provide rapid continuous tuning within 85 nm and 45 nm at output powers of 0.5 mW and more than 30 mW, respectively. (active media, lasers, and amplifiers)

Dynamic characterization and amplification of sub-picosecond pulses in fiber optical parametric chirped pulse amplifiers

DEFF Research Database (Denmark)

Cristofori, Valentina; Lali-Dastjerdi, Zohreh; Rishøj, Lars Søgaard

2013-01-01

We show a first-time demonstration of amplification of 400 fs pulses in a fiber optical parametric amplifier. The 400 fs signal is stretched in time, amplified by 26 dB and compressed back to 500 fs. A significant broadening of the pulses is experimentally shown due to dispersion and limited gain...

Theory of multiwave mixing within the superconducting kinetic-inductance traveling-wave amplifier

Science.gov (United States)

Erickson, R. P.; Pappas, D. P.

2017-03-01

We present a theory of parametric mixing within the coplanar waveguide (CPW) of a superconducting nonlinear kinetic-inductance traveling-wave (KIT) amplifier engineered with periodic dispersion loadings. This is done by first developing a metamaterial band theory of the dispersion-engineered KIT using a Floquet-Bloch construction and then applying it to the description of mixing of the nonlinear RF traveling waves. Our theory allows us to calculate signal gain versus signal frequency in the presence of a frequency stop gap, based solely on loading design. We present results for both three-wave mixing (3WM), with applied dc bias, and four-wave mixing (4WM), without dc. Our theory predicts an intrinsic and deterministic origin to undulations of 4WM signal gain with signal frequency, apart from extrinsic sources, such as impedance mismatch, and shows that such undulations are absent from 3WM signal gain achievable with dc. Our theory is extensible to amplifiers based on Josephson junctions in a lumped LC-ladder transmission line (TWPA).

Pulsed hydrogen fluoride laser oscillator-amplifier experiments

International Nuclear Information System (INIS)

Schott, G.L.

1975-01-01

Pulsed HF chemical laser oscillator energies were scaled from millijoules to several kilojoules over the period 1970-1974, reaching approximately 10 J with SF 6 and transverse discharges, and using electron-beam initiation and elemental F 2 above 1000J. This demonstrated scalability to large energy with acceptable electrical efficiency is only one prerequisite for application of this gas laser in fusion; equally important matters are achievement of focusable, approximately 1 ns pulses, couplable to light-element targets, all from an affordable system. Exploratory MOPA experiments are reported which address control of HF laser beam focusability and pulse duration, using SF 6 -based experimental oscillator--amplifier sequences and Pockels' cell switching. Simultaneous multiline lasing with 2.6 less than or equal to lambda less than or equal to 3.1 μm and high specific gain and energy density are particularly important factors encountered with HF, where amplifier pumping and lasing occur in a substantially cw temporal relationship, even in less than 100 ns bursts. Time-resolved SF 6 --HI oscillator spectra contain 27 simultaneous lines from six vibrational bands. An apertured, SF 6 -hydrocarbon pin-discharge oscillator generates approximately 10 mJ of TEM 00 radiation, which is amplified to approximately 1 J in approximately 150 ns by a TEA amplifier and p []opagated tens of meters. A three-stage system coupling these elements through an approximately 1 ns electrooptic gate to a greater than 10 J, e-beam energized amplifier is under development. (auth)

Multi-path interferometric Josephson directional amplifier for qubit readout

Science.gov (United States)

Abdo, Baleegh; Bronn, Nicholas T.; Jinka, Oblesh; Olivadese, Salvatore; Brink, Markus; Chow, Jerry M.

2018-04-01

We realize and characterize a quantum-limited, directional Josephson amplifier suitable for qubit readout. The device consists of two nondegenerate, three-wave-mixing amplifiers that are coupled together in an interferometric scheme, embedded in a printed circuit board. Nonreciprocity is generated by applying a phase gradient between the same-frequency pumps feeding the device, which plays the role of the magnetic field in a Faraday medium. Directional amplification and reflection-gain elimination are induced via wave interference between multiple paths in the system. We measure and discuss the main figures of merit of the device and show that the experimental results are in good agreement with theory. An improved version of this directional amplifier is expected to eliminate the need for bulky, off-chip isolation stages that generally separate quantum systems and preamplifiers in high-fidelity, quantum-nondemolition measurement setups.

Detailed design analysis of erbium-doped fiber amplifiers

DEFF Research Database (Denmark)

Pedersen, Bo; Bjarklev, Anders Overgaard; Lumholt, Ole

1991-01-01

When pumping the erbium-doped fiber amplifier at 0.98 and 1.48 mu m, the optimum cutoff wavelength for step profiles with arbitrary numerical aperture is shown to be 0.80 and 0.90 mu m, respectively. The use of a confined erbium profile can improve the gain coefficient up to 45%. The index raising...

Transistorized wide band pulse amplifier; Amplificateur d'impulsions a large bande et a transistors

Energy Technology Data Exchange (ETDEWEB)

Girard, J; Savinelli, H [Commissariat a l' Energie Atomique, Saclay (France).Centre d' Etudes Nucleaires; Hazoni, Y [Atomic Energy Commission (Israel)

1960-07-01

A simple wide band amplifier is described below, having a stability better than 1{sup 0}/00 deg{sup -1} centigrade, a current gain of 10{sup 3}, bandwidth of 30 MHz, and a signal to noise current ratio of about 100. This amplifier has been studied to answer the necessity of a fast transistor head amplifier for nuclear detectors, having in mind pile up and overloading problems. (author) [French] Un amplificateur simple, a large bande, est decrit ci-apres, il a une stabilite meilleure que le 0/00 par degre centigrade, un gain en courant de 10{sup 3} une largeur de bande de 30 MHz, et un rapport signal sur bruit en courant d'environ 100. Cet amplificateur a ete etudie pour repondre a la necessite de l'amplification des impulsions provenant de detecteurs nucleaires, ayant a l'esprit les problemes d'empilement et de saturation. (auteur)

Comparing SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

Science.gov (United States)

England, Troy; Curry, Matthew; Carr, Stephen; Mounce, Andrew; Jock, Ryan; Sharma, Peter; Bureau-Oxton, Chloe; Rudolph, Martin; Hardin, Terry; Carroll, Malcolm

Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will compare two amplifiers based on single-transistor circuits implemented with silicon germanium heterojunction bipolar transistors. Both amplifiers provide gain at low power levels, but the dynamics of each circuit vary significantly. We will explore the gain mechanisms, linearity, and noise of each circuit and explain the situations in which each amplifier is best used. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

Scaling the Raman gain coefficient: Applications to Germanosilicate fibers

DEFF Research Database (Denmark)

Rottwitt, Karsten; Bromage, J.; Stentz, A.J.

2003-01-01

This paper presents a comprehensive analysis of the temperature dependence of a Raman amplifier and the scaling of the Raman gain coefficient with wavelength, modal overlap, and material composition. The temperature dependence is derived by applying a quantum theoretical description, whereas...... the scaling of the Raman gain coefficient is derived using a classical electromagnetic model. We also present experimental verification of our theoretical findings....

Process Optimization for Monolithic Integration of Piezoresistive Pressure Sensor and MOSFET Amplifier with SOI Approach

International Nuclear Information System (INIS)

Kumar, V Vinoth; Dasgupta, A; Bhat, K N; KNatarajan

2006-01-01

In this paper we present the design and process optimization for fabricating piezoresitive pressure sensor and MOSFET Differential Amplifier simultaneously on the same chip. Silicon On Insulator approach has been used for realizing the membrane as well as the electronics on the same chip. The amplifier circuit has been configured in the common source connection and it has been designed with PSPICE simulation to achieve a voltage gain of about 5. In the initial set of experiments the Pressure sensor and the amplifier were fabricated on separate chips to optimize the process steps and tested in the hybrid mode. In the next set of experiments, SOI wafer having the SOI layer thickness of about 11 microns was used for realizing the membrane by anisotropic etching from the backside. The piezo-resistive pressure sensor was realized on this membrane by connecting the polysilicon resistors in the form of a Wheatstone bridge. The MOSFET source follower amplifier was also fabricated on the same SOI wafer by tailoring the process steps to suit the requirement of simultaneous fabrication of piezoresistors and the amplifier for achieving MOSFET Integrated Pressure Sensor. Reproducible results have been achieved on the SOI wafers, with the process steps developed in the laboratory. Sensitivity of 270 mV /Bar/10V, with the on chip amplifier gain of 4.5, has been achieved with this process

Efficient and Compact Optical Amplifier Using EYDF

Directory of Open Access Journals (Sweden)

Sulaiman Wadi Harun

2010-09-01

Full Text Available An efficient Erbium/Ytterbium doped fiber amplifier (EYDFA is demonstrated using a 1058nm pumping wavelength, where the amplification is assisted by energy transfer between Yb and Er ions. The energy transfer increases the limit of erbium doping concentration that is imposed by concentration quenching in Erbium-doped fiber (EDF. Therefore, the gain and noise figure are severely degraded with 1480 nm pumping, where the energy transfer cannot be achieved. The use of optical isolator improves the small signal gain and noise figure by about 4.8 dB and 1.6 dB, respectively. By employing a double-pass configuration, a higher gain can be obtained with an expense of a noise figure penalty. The gain improvement of 17.0 dB is obtained at 20 mW and -50 dBm of pump and input signal powers. This shows that the double-pass configuration is an important aspect to consider when designing an efficient EYDFA.

Note: A temperature-stable low-noise transimpedance amplifier for microcurrent measurement

Science.gov (United States)

Xie, Kai; Shi, Xueyou; Zhao, Kai; Guo, Lixin; Zhang, Hanlu

2017-02-01

Temperature stability and noise characteristics often run contradictory in microcurrent (e.g., pA-scale) measurement instruments because low-noise performance requires high-value resistors with relatively poor temperature coefficients. A low-noise transimpedance amplifier with high-temperature stability, which involves an active compensation mechanism to overcome the temperature drift mainly caused by high-value resistors, is presented. The implementation uses a specially designed R-2R compensating network to provide programmable current gain with extra-fine trimming resolution. The temperature drifts of all components (e.g., feedback resistors, operational amplifiers, and the R-2R network itself) are compensated simultaneously. Therefore, both low-temperature drift and ultra-low-noise performance can be achieved. With a current gain of 1011 V/A, the internal current noise density was about 0.4 fA/√Hz, and the average temperature coefficient was 4.3 ppm/K at 0-50 °C. The amplifier module maintains accuracy across a wide temperature range without additional thermal stabilization, and its compact size makes it especially suitable for high-precision, low-current measurement in outdoor environments for applications such as electrochemical emission supervision, air pollution particles analysis, radiation monitoring, and bioelectricity.

Optimized radiation-hardened erbium doped fiber amplifiers for long space missions

Science.gov (United States)

Ladaci, A.; Girard, S.; Mescia, L.; Robin, T.; Laurent, A.; Cadier, B.; Boutillier, M.; Ouerdane, Y.; Boukenter, A.

2017-04-01

In this work, we developed and exploited simulation tools to optimize the performances of rare earth doped fiber amplifiers (REDFAs) for space missions. To describe these systems, a state-of-the-art model based on the rate equations and the particle swarm optimization technique is developed in which we also consider the main radiation effect on REDFA: the radiation induced attenuation (RIA). After the validation of this tool set by confrontation between theoretical and experimental results, we investigate how the deleterious radiation effects on the amplifier performance can be mitigated following adequate strategies to conceive the REDFA architecture. The tool set was validated by comparing the calculated Erbium-doped fiber amplifier (EDFA) gain degradation under X-rays at ˜300 krad(SiO2) with the corresponding experimental results. Two versions of the same fibers were used in this work, a standard optical fiber and a radiation hardened fiber, obtained by loading the previous fiber with hydrogen gas. Based on these fibers, standard and radiation hardened EDFAs were manufactured and tested in different operating configurations, and the obtained data were compared with simulation data done considering the same EDFA structure and fiber properties. This comparison reveals a good agreement between simulated gain and experimental data (vulnerability in terms of gain. The presented approach is a complementary and effective tool for hardening by device techniques and opens new perspectives for the applications of REDFAs and lasers in harsh environments.

Power amplifiers for the S-, C-, X- and Ku-bands an EDA perspective

CERN Document Server

Božanić, Mladen

2016-01-01

This book provides a detailed review of power amplifiers, including classes and topologies rarely covered in books, and supplies sufficient information to allow the reader to design an entire amplifier system, and not just the power amplification stage. A central aim is to furnish readers with ideas on how to simplify the design process for a preferred power amplifier stage by introducing software-based routines in a programming language of their choice. The book is in two parts, the first focusing on power amplifier theory and the second on EDA concepts. Readers will gain enough knowledge of RF and microwave transmission theory, principles of active and passive device design and manufacturing, and power amplifier design concepts to allow them to quickly create their own programs, which will help to accelerate the transceiver design process. All circuit designers facing the challenge of designing an RF or microwave power amplifier for frequencies from 2 to 18 GHz will find this book to be a valuable asset.

Generation of coherent soft x-rays using a single-pass free-electron laser amplifier

International Nuclear Information System (INIS)

Wang, T.F.; Goldstein, J.C.; Newnam, B.E.; McVey, B.D.

1988-01-01

We consider a single-pass free-electron laser (FEL) amplifier, driven by an rf-linac followed by a damping ring for reduced emittance, for use in generating coherent light in the soft x-ray region. The dependence of the optical gain on electron-beam quality, studied with the three-dimensional FEL simulation code FELEX, is given and related to the expected power of self-amplified spontaneous emission. We discuss issues for the damping ring designed to achieve the required electron beam quality. The idea of a multipass regenerative amplifier is also presented

Development of High Power Amplifiers for Space and Ground-based Applications

DEFF Research Database (Denmark)

Hernández, Carlos Cilla

The power amplifier used in the transmitter of a microwave system is a key issue, and it derermines the system performance, cost, power consumption and reliability to a considerable extent. Traditionally, most of high power amplifiers used in military and commercial applications were tube......, the device was delivering power levels larger than 75 W, PAE >35% and gain oscillating between 7.5 +/- 0.5 dB. Measurements were shifted down in frequency 1 GHz, but simulations predicted maximum power levels similar to the ones measured....

A Programmable Biopotential Aquisition Front-end with a Resistance-free Current-balancing Instrumentation Amplifier

Directory of Open Access Journals (Sweden)

FARAGO, P.

2018-05-01

Full Text Available The development of wearable biomedical equipment benefits from low-power and low-voltage circuit techniques for reduced battery size and battery, or even battery-less, operation. This paper proposes a fully-differential low-power resistance-free programmable instrumentation amplifier for the analog front-end of biopotential monitoring systems. The proposed instrumentation amplifier implements the current balancing technique. Low power consumption is achieved with subthreshold biasing. To reduce chip area and enable integration, passive resistances have been replaced with active equivalents. Accordingly, the instrumentation amplifier gain is expressed as the ratio of two transconductance values. The proposed instrumentation amplifier exhibits two degrees of freedom: one to set the desired range and the other for fine-tuning of the voltage gain. The proposed IA is employed in a programmable biopotential acquisition front-end. The programmable frequency-selective behavior is achieved by having the lower cutoff frequency of a Gm-C Tow-Thomas biquad varied in a constant-C tuning approach. The proposed solutions and the programmability of the operation parameters to the specifications of particular bio-medical signals are validated on a 350nm CMOS process.

Suppression of Brillouin scattering in fibre-optical parametric amplifier by applying temperature control and phase modulation

DEFF Research Database (Denmark)

Lorenzen, Michael Rodas; Noordegraaf, Danny; Nielsen, Carsten Vandel

2009-01-01

An increased gain in a fibre-optical parametric amplifier through suppression of stimulated Brillouin scattering is demonstrated by applying a temperature distribution along the fibre for a fixed phase modulation of the pump. The temperature distribution slightly impacts the gain spectrum....

32-core erbium/ytterbium-doped multicore fiber amplifier for next generation space-division multiplexed transmission system

DEFF Research Database (Denmark)

Jain, Saurabh; Castro, Carlos; Jung, Yongmin

2017-01-01

We present a high-core-count 32-core multicore erbium/ytterbium-doped fiber amplifier (32c-MC-EYDFA) in a cladding pumped configuration. A side pumping technique is employed for ease of pump coupling in this monolithic all-fiber amplifier. A minimum gain of >17 dB and an average noise figure (NF)...

A describing function approach to bipolar RF-power amplifier simulation

DEFF Research Database (Denmark)

Vidkjær, Jens

1981-01-01

A method for fast and accurate computations of the primary performance parameters such as gain, efficiency, output power, and bandwidth in class-C biased RF-power amplifier stages is presented. The method is based on a describing function characterization of the RF-power transistor where the term...

Recent advances in long wavelength quantum dot lasers and amplifiers

NARCIS (Netherlands)

Nötzel, R.; Bente, E.A.J.M.; Smit, M.K.; Dorren, H.J.S.

2009-01-01

We demonstrate 1.55-µm InAs/InGaAsP/InP (100) quantum dot (QD) shallow and deep etched Fabry-Pérot and ring lasers, micro-ring lasers, mode-locked lasers, Butt-joint integrated lasers, polarization control of gain, and wavelength conversion in QD amplifiers.

Design, construction and test of RF solid state power amplifier for IRANCYC-10

Science.gov (United States)

Azizi, H.; Dehghan, M.; Abbasi Davani, F.; Ghasemi, F.

2018-03-01

In this paper, design, simulation and construction of a high power amplifier to provide the required power of a cyclotron accelerator (IRANCYC-10) is presented step-by-step. The Push-Pull designed amplifier can generate 750 W at the operating frequency of 71 MHz continous wave (CW). In this study, achieving the best efficiency of the amplifier, as well as reducing overall volume using baluns, were two important goals. The new offered water-cooled heat sink was used for cooling the amplifier which increases the operating life of the transistor. The gain and PAE of the SSPA were obtained 20 dB and 77.7%, respectively. The simulated and measured RF results are in good agreement with each other. The results show that, using an RF transformer in matching impedance of matching networks, it causes a smaller size and also a better amplifier performance.

Ultra-low Voltage CMOS Cascode Amplifier

OpenAIRE

Lehmann, Torsten; Cassia, Marco

2000-01-01

In this paper, we design a folded cascode operational transconductance amplifier in a standard CMOS process, which has a measured 69 dB DC gain, a 2 MHz bandwidth and compatible input- and output voltage levels at a 1 V power supply. This is done by a novel Current Driven Bulk (CDB) technique, which reduces the MOST threshold voltage by forcing a constant current though the transistor bulk terminal. We also look at limitations and improvements of this CDB technique.

Ultra-low Voltage CMOS Cascode Amplifier

DEFF Research Database (Denmark)

Lehmann, Torsten; Cassia, Marco

2000-01-01

In this paper, we design a folded cascode operational transconductance amplifier in a standard CMOS process, which has a measured 69 dB DC gain, a 2 MHz bandwidth and compatible input- and output voltage levels at a 1 V power supply. This is done by a novel Current Driven Bulk (CDB) technique......, which reduces the MOST threshold voltage by forcing a constant current though the transistor bulk terminal. We also look at limitations and improvements of this CDB technique....

Polarization-maintaining, double-clad fiber amplifier employing externally applied stress-induced birefringence

International Nuclear Information System (INIS)

Koplow, Jeffrey P.; Goldberg, Lew; Moeller, Robert P.; Kliner, Dahv A. V.

2000-01-01

We report a new approach to obtaining linear-polarization operation of a rare-earth-doped fiber amplifier in which the gain fiber is coiled under tension to induce birefringence. We demonstrated this method by constructing an Er/Yb-doped, double-clad, single-mode fiber amplifier with an output power of 530 mW and a polarization extinction ratio of >17 dB (when seeded with linearly polarized light) at a wavelength of ∼1.5 μm . The technique is achromatic, permits single- or multiple-pass operation of the amplifier, requires no additional components in the optical path, leaves the fiber ends unobstructed, and is inexpensive to implement. (c) 2000 Optical Society of America

A chopper current-feedback instrumentation amplifier with a 1 mHz 1/f noise corner and an AC-coupled ripple reduction loop

NARCIS (Netherlands)

Wu, R.; Makinwa, K.A.A.; Huijsing, J.H.

2009-01-01

This paper presents a chopper instrumentation amplifier for interfacing precision thermistor bridges. For high CMRR and DC gain, the amplifier employs a three-stage current-feedback topology with nested-Miller compensation. By chopping both the input and intermediate stages of the amplifier, a 1 mHz

Stress Recovery Effects of High- and Low-Frequency Amplified Music on Heart Rate Variability.

Science.gov (United States)

Nakajima, Yoshie; Tanaka, Naofumi; Mima, Tatsuya; Izumi, Shin-Ichi

Sounds can induce autonomic responses in listeners. However, the modulatory effect of specific frequency components of music is not fully understood. Here, we examined the role of the frequency component of music on autonomic responses. Specifically, we presented music that had been amplified in the high- or low-frequency domains. Twelve healthy women listened to white noise, a stress-inducing noise, and then one of three versions of a piece of music: original, low-, or high-frequency amplified. To measure autonomic response, we calculated the high-frequency normalized unit (HFnu), low-frequency normalized unit, and the LF/HF ratio from the heart rate using electrocardiography. We defined the stress recovery ratio as the value obtained after participants listened to music following scratching noise, normalized by the value obtained after participants listened to white noise after the stress noise, in terms of the HFnu, low-frequency normalized unit, LF/HF ratio, and heart rate. Results indicated that high-frequency amplified music had the highest HFnu of the three versions. The stress recovery ratio of HFnu under the high-frequency amplified stimulus was significantly larger than that under the low-frequency stimulus. Our results suggest that the high-frequency component of music plays a greater role in stress relief than low-frequency components.

Transient optical gain in germanium quantum wells

Energy Technology Data Exchange (ETDEWEB)

Chatterjee, Sangam; Lange, Christoph; Koester, Niko S.; Schaefer, Martin; Kira, Mackillo; Koch, Stephan W. [Faculty of Physics and Materials Sciences Center, Philipps-Universitaet Marburg (Germany); Chrastina, Daniel; Isella, Giovanni; Kaenel, Hans von [CNISM, Como (Italy); L-NESS, Dipartimento di Fisica del Politecnico di Milano, Como (Italy); Sigg, Hans [Laboratory for Micro and Nanotecnology, Paul Scherrer Institut, Villigen PSI (Switzerland)

2010-07-01

One of today's most-sought goals in semiconductor technology is the monolithic integration of microelectronics and photonics on Si. Optical gain is, in general, not expected for Si and Ge or its alloys due to the indirect nature of the band gap in this material system. Here, we show that Ge/SiGe QWs show transient optical gain and may thus be used as an optically-pumped amplifier at room temperature. Further, the nonequilibrium effects which govern the relaxation dynamics of the optically injected carrier distributions in this material were observed and analyzed using a microscopic many-body theory. Strong non-equilibrium gain was obtained on a sub-100 fs time scale. Long-lived gain arising from {gamma}-point transitions is overcompensated by a process bearing the character of free carrier absorption.

Optical properties of nanowire metamaterials with gain

DEFF Research Database (Denmark)

Isidio de Lima, Joaquim Junior; Adam, Jost; Rego, Davi

2016-01-01

The transmittance, reflectance and absorption of a nanowire metamaterial with optical gain are numerically simulated and investigated. It is assumed that the metamaterial is represented by aligned silver nanowires embedded into a semiconductor matrix, made of either silicon or gallium phosphide....... The gain in the matrix is modeled by adding a negative imaginary part to the dielectric function of the semiconductor. It is found that the optical coefficients of the metamaterial depend on the gain magnitude in a non-trivial way: they can both increase and decrease with gain depending on the lattice...... constant of the metamaterial. This peculiar behavior is explained by the field redistribution between the lossy metal nanowires and the amplifying matrix material. These findings are significant for a proper design of nanowire metamaterials with low optical losses for diverse applications....

Simulation analysis of rectangular dielectric-loaded traveling wave amplifiers for THz sources

Directory of Open Access Journals (Sweden)

Changbiao Wang

2007-12-01

Full Text Available Nonlinear simulation results for a 220-GHz rectangular dielectric-loaded traveling-wave amplifier are presented. Simulations are used to check a linear theory that is developed by phenomenological introduction of an effective dielectric parameter for electron beam channel, and it is found that the rf power gains from Pierce three-wave theory and particle simulations are in reasonable agreement. It is shown that the rf power gain during initial beam-wave interaction is positive; the falling on the initial rf power profile, which has been thought to be the rf power transferred to the beam for bunching buildup (negative gain effect, is probably resulting from numerical errors. Beam-wave interaction mechanism is analyzed by examining the evolution of beam bunching centers. Influences of various parameters on amplifier performance are examined, and transverse space-charge effect is analyzed. A symmetric excitation scheme for rf couplers is proposed, and rf field jumps on the common intersection line of vacuum, dielectric, and metal wall, which were found in rf simulations, are explained theoretically.

LNA A 1.9 GHZ low noise amplifier

Directory of Open Access Journals (Sweden)

Jorge Julián Moreno-Rubio

2006-12-01

Full Text Available This paper shows the design, the simulation, and the layout from a low noise amplifier (LNA, designed with and approximate band from 25 to 80 MHz. The design results of the matching neworks are shown, its noise figure, its available and transduced gain according to its non lineal model (TOM, the DC network, crash inductors and matching capacitors with the large impedance transmission lines.

Large area electron beam pumped krypton fluoride laser amplifier

International Nuclear Information System (INIS)

Sethian, J.D.; Obenschain, S.P.; Gerber, K.A.; Pawley, C.J.; Serlin, V.; Sullivan, C.A.; Webster, W.; Deniz, A.V.; Lehecka, T.; McGeoch, M.W.; Altes, R.A.; Corcoran, P.A.; Smith, I.D.; Barr, O.C.

1997-01-01

Nike is a recently completed multi-kilojoule krypton fluoride (KrF) laser that has been built to study the physics of direct drive inertial confinement fusion. This paper describes in detail both the pulsed power and optical performance of the largest amplifier in the Nike laser, the 60 cm amplifier. This is a double pass, double sided, electron beam-pumped system that amplifies the laser beam from an input of 50 J to an output of up to 5 kJ. It has an optical aperture of 60 cm x 60 cm and a gain length of 200 cm. The two electron beams are 60 cm high x 200 cm wide, have a voltage of 640 kV, a current of 540 kA, and a flat top power pulse duration of 250 ns. A 2 kG magnetic field is used to guide the beams and prevent self-pinching. Each electron beam is produced by its own Marx/pulse forming line system. The amplifier has been fully integrated into the Nike system and is used on a daily basis for laser-target experiments. copyright 1997 American Institute of Physics

An Integrated Low-Power Lock-In Amplifier and Its Application to Gas Detection

Directory of Open Access Journals (Sweden)

Paulina M. Maya-Hernández

2014-08-01

Full Text Available This paper presents a new micropower analog lock-in amplifier (LIA suitable for battery-operated applications thanks to its reduced size and power consumption as well as its operation with single-supply voltage. The proposed LIA was designed in a 0.18 µm CMOS process with a single supply voltage of 1.8 V. Experimental results show a variable DC gain ranging from 24.7 to 42 dB, power consumption of 417 µW and integration area of 0.013 mm2. The LIA performance was demonstrated by measuring carbon monoxide concentrations as low as 1 ppm in dry N2. The experimental results show that the response to CO of the sensing system can be considerably improved by means of the proposed LIA.

Erbium/ytterbium co-doped double clad fiber amplifier, its applications and effects in fiber optic communication systems

Science.gov (United States)

Dua, Puneit

Increased demand for larger bandwidth and longer inter-amplifiers distances translates to higher power budgets for fiber optic communication systems in order to overcome large splitting losses and achieve acceptable signal-to-noise ratios. Due to their unique design ytterbium sensitized erbium doped, double clad fiber amplifiers; offer significant increase in the output powers that can be obtained. In this thesis we investigate, a one-stage, high power erbium and ytterbium co-doped double clad fiber amplifier (DCFA) with output power of 1.4W, designed and built in our lab. Experimental demonstration and numerical simulation techniques have been used to systematically study the applications of such an amplifier and the effects of incorporating it in various fiber optic communication systems. Amplitude modulated subcarrier multiplexed (AM-SCM) CATV distribution experiment has been performed to verify the feasibility of using this amplifier in an analog/digital communication system. The applications of the amplifier as a Fabry-Perot and ring fiber laser with an all-fiber cavity, a broadband supercontinuum source and for generation of high power, short pulses at 5GHz have been experimentally demonstrated. A variety of observable nonlinear effects occur due to the high intensity of the optical powers confined in micron-sized cores of the fibers, this thesis explores in detail some of these effects caused by using the high power Er/Yb double clad fiber amplifier. A fiber optic based analog/digital CATV system experiences composite second order (CSO) distortion due to the interaction between the gain tilt---the variation of gain with wavelength, of the doped fiber amplifier and the wavelength chirp of the directly modulated semiconductor laser. Gain tilt of the Er/Yb co-doped fiber amplifier has been experimentally measured and its contribution to the CSO of the system calculated. Theoretical analysis of a wavelength division multiplexed system with closely spaced

Strong environmental coupling in a Josephson parametric amplifier

International Nuclear Information System (INIS)

Mutus, J. Y.; White, T. C.; Barends, R.; Chen, Yu; Chen, Z.; Chiaro, B.; Dunsworth, A.; Jeffrey, E.; Kelly, J.; Neill, C.; O'Malley, P. J. J.; Roushan, P.; Sank, D.; Vainsencher, A.; Wenner, J.; Cleland, A. N.; Martinis, John M.; Megrant, A.; Sundqvist, K. M.

2014-01-01

We present a lumped-element Josephson parametric amplifier designed to operate with strong coupling to the environment. In this regime, we observe broadband frequency dependent amplification with multi-peaked gain profiles. We account for this behavior using the “pumpistor” model which allows for frequency dependent variation of the external impedance. Using this understanding, we demonstrate control over the complexity of gain profiles through added variation in the environment impedance at a given frequency. With strong coupling to a suitable external impedance, we observe a significant increase in dynamic range, and large amplification bandwidth up to 700 MHz giving near quantum-limited performance.

Cryogenic cooling for high power laser amplifiers

Directory of Open Access Journals (Sweden)

Perin J.P.

2013-11-01

Full Text Available Using DPSSL (Diode Pumped Solid State Lasers as pumping technology, PW-class lasers with enhanced repetition rates are developed. Each of the Yb YAG amplifiers will be diode-pumped at a wavelength of 940 nm. This is a prerequisite for achieving high repetition rates (light amplification duration 1 millisecond and repetition rate 10 Hz. The efficiency of DPSSL is inversely proportional to the temperature, for this reason the slab amplifier have to be cooled at a temperature in the range of 100 K–170 K with a heat flux of 1 MW*m−2. This paper describes the thermo-mechanical analysis for the design of the amplification laser head, presents a preliminary proposal for the required cryogenic cooling system and finally outlines the gain of cryogenic operation for the efficiency of high pulsed laser.

Design of a power amplifier for the LAMPF proton storage ring transverse damper system

International Nuclear Information System (INIS)

Lunsford, J.S.

1981-01-01

A power amplifier has been designed to drive the 50-Ω stripline deflection structures in the transverse active damper of the Los Alamos 800-MeV Proton Storage Ring (PSR). The unit will provide 600-V peak-to-peak with a dc-to-100-MHz bandwidth. Other important characteristics include < 40-ns delay time, 50-dB voltage gain, and 4-ns risetime with < 5% overshoot and ringing. Because of the current-drive properties of the amplifier, two amplifiers could be combined to provide over 1000-V peak-to-peak into 50 Ω, with very little bandwidth degradation. Components in the power amplifier that represent new designs are a 20-tube distributed-amplifier output stage; a driver stage, using VMOS FET and bipolar transistors; a high-voltage probe, with good dc stability and 150-MHz bandwidth; a transient suppressor circuit, using PIN diodes to protect the transistorized drivers from tube arcing; a nonlinear amplifier to compensate for the nonlinear characteristics of the distributed amplifier; and a first-fail indicator circuit to aid in locating the prime causes of equipment failures

Charge sensitive amplifies. The state of arts

Energy Technology Data Exchange (ETDEWEB)

Mori, Kunishiro [Clear Pulse Co., Tokyo (Japan)

1996-07-01

In the radiation detectors, signals are essentially brought with charges produced by radiation, then it is naturally the best way to use a charge sensitive amplifier (CSA) system to extract those signals. The CSA is thought to be the best amplifier suitable to almost all the radiation detectors, if neglecting economical points of view. The CSA has been only applied to special fields like radiation detection because the concept of `charges` is not so universal against the concepts of `voltage` and `current`. The CSA, however, is low in noise and a high speed amplifier and may be applicable not only to radiation measurement but also piezoelectric devices and also bolometers. In this article, noise in the CSA, basic circuit on the CSA, concepts of `equivalent noise charge` (ENC), a method for the ENC, and importance of the `open-loop gain` in the CSA to achieve better performance of it and how to realize in a practical CSA were described. And, characteristics on a counting rate of the CSA, various circuit used in the CSA, and CSAs which are commercially available at present and special purpose CSAs were also introduced. (G.K.)

Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

Energy Technology Data Exchange (ETDEWEB)

Vissers, M. R.; Erickson, R. P.; Ku, H.-S.; Vale, Leila; Wu, Xian; Hilton, G. C.; Pappas, D. P., E-mail: David.Pappas@NIST.gov [National Institute of Standards and Technology, Boulder, Colorado 80305 (United States)

2016-01-04

We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone, we are able to generate parametric amplification using three-wave mixing (3WM). The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. We compare these results directly to the four-wave mixing amplification mode, i.e., without DC-biasing. We find that the 3WM mode allows operation with the pump at lower RF power and at frequencies far from the signal. We have used this knowledge to redesign the amplifiers to utilize primarily 3WM amplification, thereby allowing for direct integration into large scale qubit and detector applications.

Low-noise kinetic inductance traveling-wave amplifier using three-wave mixing

Science.gov (United States)

Vissers, M. R.; Erickson, R. P.; Ku, H.-S.; Vale, Leila; Wu, Xian; Hilton, G. C.; Pappas, D. P.

2016-01-01

We have fabricated a wide-bandwidth, high dynamic range, low-noise cryogenic amplifier based on a superconducting kinetic inductance traveling-wave device. The device was made from NbTiN and consisted of a long, coplanar waveguide on a silicon chip. By adding a DC current and an RF pump tone, we are able to generate parametric amplification using three-wave mixing (3WM). The devices exhibit gain of more than 15 dB across an instantaneous bandwidth from 4 to 8 GHz. The total usable gain bandwidth, including both sides of the signal-idler gain region, is more than 6 GHz. The noise referred to the input of the devices approaches the quantum limit, with less than 1 photon excess noise. We compare these results directly to the four-wave mixing amplification mode, i.e., without DC-biasing. We find that the 3WM mode allows operation with the pump at lower RF power and at frequencies far from the signal. We have used this knowledge to redesign the amplifiers to utilize primarily 3WM amplification, thereby allowing for direct integration into large scale qubit and detector applications.

High peak power picosecond hybrid fiber and solid-state amplifier system

International Nuclear Information System (INIS)

Wushouer, X; Yan, P; Yu, H; Liu, Q; Fu, X; Yan, X; Gong, M

2010-01-01

We report the high peak power picosecond hybrid fiber and solid-state laser amplifier system. The passively mode-locked solid-state seed source produced an average power of 1.8 W with pulse width of 14 ps and repetition rate of 86 MHz. It was directly coupled into the first Yb-doped polarized photonic crystal fiber amplifier stage. To avoid the nonlinear effects in fiber, the output power from the first stage was merely amplified to 24 W with the narrow spectra broadening of 0.21 nm. For the improvement of the peak power, the dual-end pumped composite Nd:YVO 4 amplifier system has been chosen at the second stage. To reduce the serious thermal effect, the thermally bonded composite YVO 4 – Nd:YVO 4 – YVO 4 rod crystal was used as the gain medium. The 53 W TEM 00 mode with the peak power of 40 kW, beam quality of M 2 < 1.15, corresponding to the optical-optical efficiency of 42.4% was obtained at the hybrid amplifier laser system. The system allows using a low power seed source and demonstrates an increase in the peak power beyond a fiber master oscillator power amplifier's (MOPA's) limit

Robust Model Predictive Control of a Nonlinear System with Known Scheduling Variable and Uncertain Gain

DEFF Research Database (Denmark)

Mirzaei, Mahmood; Poulsen, Niels Kjølstad; Niemann, Hans Henrik

2012-01-01

Robust model predictive control (RMPC) of a class of nonlinear systems is considered in this paper. We will use Linear Parameter Varying (LPV) model of the nonlinear system. By taking the advantage of having future values of the scheduling variable, we will simplify state prediction. Because...... of the special structure of the problem, uncertainty is only in the B matrix (gain) of the state space model. Therefore by taking advantage of this structure, we formulate a tractable minimax optimization problem to solve robust model predictive control problem. Wind turbine is chosen as the case study and we...... choose wind speed as the scheduling variable. Wind speed is measurable ahead of the turbine, therefore the scheduling variable is known for the entire prediction horizon....

A wide range and high speed automatic gain control

International Nuclear Information System (INIS)

Tacconi, E.; Christiansen, C.

1993-05-01

Automatic gain control (AGC) techniques have been largely used since the beginning of electronics, but in most of the applications the dynamic response is slow compared with the carrier frequency. The problem of developing an automatic gain control with high dynamic response and wide control range simultaneously is analyzed in this work. An ideal gain control law, with the property that the total loop gain remains constant independent of the carrier amplitude, is obtained. The resulting AGC behavior is compared by computer simulations with a linear multiplier AGC. The ideal gain control law can be approximated using a transconductance amplifier. A practical circuit that has been used at CERN in the radio frequency loops of the Booster Synchrotron is presented. The circuit has high speed and 80-dB gain control range

Operation amplifier

NARCIS (Netherlands)

Tetsuya, Saito; Nauta, Bram

2008-01-01

To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. SOLUTION: The operation amplifier comprises: a differential amplifier circuit 1;

A digital input class-D audio amplifier with sixth-order PWM

International Nuclear Information System (INIS)

Luo Shumeng; Li Dongmei

2013-01-01

A digital input class-D audio amplifier with a sixth-order pulse-width modulation (PWM) modulator is presented. This modulator moves the PWM generator into the closed sigma—delta modulator loop. The noise and distortions generated at the PWM generator module are suppressed by the high gain of the forward loop of the sigma—delta modulator. Therefore, at the output of the modulator, a very clean PWM signal is acquired for driving the power stage of the class-D amplifier. A sixth-order modulator is designed to balance the performance and the system clock speed. Fabricated in standard 0.18 μm CMOS technology, this class-D amplifier achieves 110 dB dynamic range, 100 dB signal-to-noise rate, and 0.0056% total harmonic distortion plus noise. (semiconductor integrated circuits)

Ultrafast gain and index dynamics of quantum dash structures emitting at 1.55 mu m

DEFF Research Database (Denmark)

Poel, Mike van der; Mørk, Jesper; Somers, A.

2006-01-01

The authors systematically characterize the ultrafast gain and index recovery of a quantum dash semiconductor optical amplifier after it has amplified a strong femtosecond pulse. The results show a recovery dominated by a fast time constant of 1.4 ps with an ultimate recovery taking place on a 150...

High gain L-band erbium-doped fiber amplifier with two-stage ...

Indian Academy of Sciences (India)

stage erbium-doped fiber amplifier; amplified spontaneous emission. Abstract. An experiment on gain enhancement in the long wavelength band erbium-doped fiber amplifier (L-band EDFA) is demonstrated using dual forward pumping scheme ...

Signal-to-pump back action and self-oscillation in double-pump Josephson parametric amplifier

International Nuclear Information System (INIS)

Kamal, Archana; Marblestone, Adam; Devoret, Michel

2009-01-01

We present the theory of a Josephson parametric amplifier employing two-pump sources. Our calculations are based on input-output theory, and can easily be generalized to any coupled system involving parametric interactions. We analyze the operation of the device, taking into account the feedback introduced by the reaction of the signal and noise on the pump power, and in this framework, compute the response functions of interest--signal and idler gains, internal gain of the amplifier, and self-oscillation signal amplitude. To account for this back action between signal and pump, we adopt a mean-field approach and self-consistently explore the boundary between amplification and self-oscillation. The coincidence of bifurcation and self-oscillation thresholds reveals that the origin of coherent emission of the amplifier lies in the multiwave mixing of the noise components. Incorporation of the back action leads the system to exhibit hysteresis, dependent on parameters such as temperature and detuning from resonance. Our analysis also shows that the resonance condition itself changes in the presence of back action and this can be understood in terms of the change in plasma frequency of the junction. The potential of the double-pump amplifier for quantum-limited measurements and as a squeezer is also discussed.

Gain bandwidth of 80 nm and 2 dB/cm peak gain in Al2O3:Er3+ optical amplifiers on silicon

NARCIS (Netherlands)

Bradley, J.; Agazzi, L.; Geskus, D.; Ay, F.; Worhoff, Kerstin; Pollnau, Markus

Erbium-doped aluminum oxide integrated optical amplifiers were fabricated on silicon substrates, and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2x10e20 cm−3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the

Image-converter streak cameras with very high gain

International Nuclear Information System (INIS)

1975-01-01

A new camera is described with slit scanning and very high photonic gain (G=5000). Development of the technology of tubes and microchannel plates has enabled integration of such an amplifying element in an image converter tube which does away with the couplings and the intermediary electron-photon-electron conversions of the classical converter systems having external amplification. It is thus possible to obtain equal or superior performance while retaining considerable gain for the camera, great compactness, great flexibility in use, and easy handling. (author)

Optimal Operation of a Josephson Parametric Amplifier for Vacuum Squeezing

Science.gov (United States)

Malnou, M.; Palken, D. A.; Vale, Leila R.; Hilton, Gene C.; Lehnert, K. W.

2018-04-01

A Josephson parametric amplifier (JPA) can create squeezed states of microwave light, lowering the noise associated with certain quantum measurements. We experimentally study how the JPA's pump influences the phase-sensitive amplification and deamplification of a coherent tone's amplitude when that amplitude is commensurate with vacuum fluctuations. We predict and demonstrate that, by operating the JPA with a single current pump whose power is greater than the value that maximizes gain, the amplifier distortion is reduced and, consequently, squeezing is improved. Optimizing the singly pumped JPA's operation in this fashion, we directly observe 3.87 ±0.03 dB of vacuum squeezing over a bandwidth of 30 MHz.

Superluminal plasmons with resonant gain in population inverted bilayer graphene

KAUST Repository

Low, Tony

2017-12-28

AB-stacked bilayer graphene with a tunable electronic bandgap in excess of the optical phonon energy presents an interesting active medium, and we consider such theoretical possibility in this work. We argue the possibility of a highly resonant optical gain in the vicinity of the asymmetry gap. Associated with this resonant gain are strongly amplified plasmons, plasmons with negative group velocity and superluminal effects, as well as directional leaky modes.

Superluminal plasmons with resonant gain in population inverted bilayer graphene

KAUST Repository

Low, Tony; Chen, Pai-Yen; Basov, D. N.

2017-01-01

AB-stacked bilayer graphene with a tunable electronic bandgap in excess of the optical phonon energy presents an interesting active medium, and we consider such theoretical possibility in this work. We argue the possibility of a highly resonant optical gain in the vicinity of the asymmetry gap. Associated with this resonant gain are strongly amplified plasmons, plasmons with negative group velocity and superluminal effects, as well as directional leaky modes.

Fibercore AstroGain fiber: multichannel erbium doped fibers for optical space communications

Science.gov (United States)

Hill, Mark; Gray, Rebecca; Hankey, Judith; Gillooly, Andy

2014-03-01

Fibercore have developed AstroGainTM fiber optimized for multichannel amplifiers used in optical satellite communications and control. The fiber has been designed to take full advantage of the photo-annealing effect that results from pumping in the 980nm region. The proprietary trivalent structure of the core matrix allows optimum recovery following radiation damage to the fiber, whilst also providing a market leading Erbium Doped Fiber Amplifier (EDFA) efficiency. Direct measurements have been taken of amplifier efficiency in a multichannel assembly, which show an effective photo-annealing recovery of up to 100% of the radiation induced attenuation through excitation of point defects.

Measured stimulated Raman gain in methane

International Nuclear Information System (INIS)

Lopert, R.B.

1983-01-01

This report is about the stimulated Raman effect in methane due to the nu 1 vibration. For various gas pressures between 150 torr and 30 atm, the Raman lineshape function was both experimentally measured and synthesized using a computer model. The stimulated Raman gain was measured by sending a pump laser beam provided by an argon-ion laser and a weak probe beam provided by a tunable dye laser through a cell of methane gas. The stimulated Raman effect caused some of the energy from the pump beam to be transferred to the probe beam. The intensity of the pump beam was low so the gain of the probe beam was on the order of parts per million. A two detector arrangement and a differential amplifier system that had a feedback loop to balance the detectors was constructed to measure the small gains. A detailed description of this detection system that was able to measure gains as small as 0.2 parts per million is provided

On the performance of hybrid ARQ with incremental redundancy over amplify-and-forward dual-hop relay networks

KAUST Repository

Hadjtaieb, Amir

2014-09-01

In this paper, we consider a three node relay network comprising a source, a relay, and a destination. The source transmits the message to the destination using hybrid automatic repeat request (HARQ) with incremental redundancy (IR). The relay overhears the transmitted message, amplifies it using a variable gain amplifier, and then forwards the message to the destination. This latter combines both the source and the relay message and tries to decode the information. In case of decoding failure, the destination sends a negative acknowledgement. A new replica of the message containing new parity bits is then transmitted in the subsequent HARQ round. This process continues until successful decoding occurs at the destination or a maximum number M of rounds is reached. We study the performance of HARQ-IR over the considered relay channel from an information theoretic perspective. We derive for instance exact expressions and bounds for the information outage probability, the average number of transmissions, and the average transmission rate. The derived exact expressions are validated by Monte Carlo simulations.

75 GHz InP DHBT power amplifier based on two-stacked transistors

DEFF Research Database (Denmark)

Squartecchia, Michele; Midili, Virginio; Johansen, Tom Keinicke

2017-01-01

In this paper we present the design and measurements of a two-stage 75-GHz InP Double Heterojunction Bipolar Transistor (DHBT) power amplifier (PA). An optimized two-stacked transistor power cell has been designed, which represents the building block in the power stage as well as in the driver st......, the power amplifier exhibits a small signal gain of G = 12.6 dB, output power at 1-dB compression of Pout, 1dB = 18.6 dBm and a saturated output power of Psat > 21.4 dBm....

Amplifier Distortion

Science.gov (United States)

Keeports, David

2006-12-01

By definition, a high fidelity amplifier's instantaneous output voltage is directly proportional to its instantaneous input voltage. While high fidelity is generally valued in the amplification of recorded music, nonlinearity, also known as distortion, is desirable in the amplification of some musical instruments. In particular, guitar amplifiers exploit nonlinearity to increase both the harmonic content and sustain of a guitar's sound. I will discuss how both modifications in sound result from saturation of triode tubes and transistors. Additionally, I will describe the difference in the symmetry of saturation curves for transistors and tubes and the reason why tube guitar amplifiers are generally considered to be superior to solid-state amplifiers. Finally, I will discuss attempts to use solid-state electronics to replicate the sound of tube amplifiers.

A high-average power tapered FEL amplifier at submillimeter frequencies using sheet electron beams and short-period wigglers

International Nuclear Information System (INIS)

Bidwell, S.W.; Radack, D.J.; Antonsen, T.M. Jr.; Booske, J.H.; Carmel, Y.; Destler, W.W.; Granatstein, V.L.; Levush, B.; Latham, P.E.; Zhang, Z.X.

1990-01-01

A high-average-power FEL amplifier operating at submillimeter frequencies is under development at the University of Maryland. Program goals are to produce a CW, ∼1 MW, FEL amplifier source at frequencies between 280 GHz and 560 GHz. To this end, a high-gain, high-efficiency, tapered FEL amplifier using a sheet electron beam and a short-period (superconducting) wiggler has been chosen. Development of this amplifier is progressing in three stages: (1) beam propagation through a long length (∼1 m) of short period (λ ω = 1 cm) wiggler, (2) demonstration of a proof-of-principle amplifier experiment at 98 GHz, and (3) designs of a superconducting tapered FEL amplifier meeting the ultimate design goal specifications. 17 refs., 1 fig., 1 tab

Quantum dots for lasers, amplifiers and computing

International Nuclear Information System (INIS)

Bimberg, Dieter

2005-01-01

For InAs-GaAs based quantum dot lasers emitting at 1300 nm, digital modulation showing an open eye pattern up to 12 Gb s -1 at room temperature is demonstrated, at 10 Gb s -1 the bit error rate is below 10 -12 at -2 dB m receiver power. Cut-off frequencies up to 20 GHz are realised for lasers emitting at 1.1 μm. Passively mode-locked QD lasers generate optical pulses with repetition frequencies between 5 and 50 GHz, with a minimum Fourier limited pulse length of 3 ps. The uncorrelated jitter is below 1 ps. We use here deeply etched narrow ridge waveguide structures which show excellent performance similar to shallow mesa structures, but a circular far field at a ridge width of 1 μm, improving coupling efficiency into fibres. No beam filamentation of the fundamental mode, low a-factors and strongly reduced sensitivity to optical feedback are observed. QD lasers are thus superior to QW lasers for any system or network. Quantum dot semiconductor optical amplifier (QD SOAs) demonstrate gain recovery times of 120-140 fs, 4-7 times faster than bulk/QW SOAs, and a net gain larger than 0.4 dB/(mm*QD-layer) providing us with novel types of booster amplifiers and Mach-Zehnder interferometers. These breakthroughs became possible due to systematic development of self-organized growth technologies

High linearity 5.2-GHz power amplifier MMIC using CPW structure technology with a linearizer circuit

International Nuclear Information System (INIS)

Wu Chiasong; Lin Tah-Yeong; Wu Hsien-Ming

2010-01-01

A built-in linearizer was applied to improve the linearity in a 5.2-GHz power amplifier microwave monolithic integrated circuit (MMIC), which was undertaken with 0.15-μm AlGaAs/InGaAs D-mode PHEMT technology. The power amplifier (PA) was studied taking into account the linearizer circuit and the coplanar waveguide (CPW) structures. Based on these technologies, the power amplifier, which has a chip size of 1.44 x 1.10 mm 2 , obtained an output power of 13.3 dBm and a power gain of 14 dB in the saturation region. An input third-order intercept point (HP 3 ) of -3 dBm, an output third-order intercept point (OIP 3 ) of 21.1 dBm and a power added efficiency (PAE) of 22% were attained, respectively. Finally, the overall power characterization exhibited high gain and high linearity, which illustrates that the power amplifier has a compact circuit size and exhibits favorable RF characteristics. This power circuit demonstrated high RF characterization and could be used for microwave power circuit applications at 5.2 GHz. (semiconductor integrated circuits)

Analysis on frequency response of trans-impedance amplifier (TIA) for signal-to-noise ratio (SNR) enhancement in optical signal detection system using lock-in amplifier (LIA)

Science.gov (United States)

Kim, Ji-Hoon; Jeon, Su-Jin; Ji, Myung-Gi; Park, Jun-Hee; Choi, Young-Wan

2017-02-01

Lock-in amplifier (LIA) has been widely used in optical signal detection systems because it can measure small signal under high noise level. Generally, The LIA used in optical signal detection system is composed of transimpedance amplifier (TIA), phase sensitive detector (PSD) and low pass filter (LPF). But commercial LIA using LPF is affected by flicker noise. To avoid flicker noise, there is 2ω detection LIA using BPF. To improve the dynamic reserve (DR) of the 2ω LIA, the signal to noise ratio (SNR) of the TIA should be improved. According to the analysis of frequency response of the TIA, the noise gain can be minimized by proper choices of input capacitor (Ci) and feed-back network in the TIA in a specific frequency range. In this work, we have studied how the SNR of the TIA can be improved by a proper choice of frequency range. We have analyzed the way to control this frequency range through the change of passive component in the TIA. The result shows that the variance of the passive component in the TIA can change the specific frequency range where the noise gain is minimized in the uniform gain region of the TIA.

A high-power millimeter-wave sheet beam free-electron laser amplifier

International Nuclear Information System (INIS)

Cheng, S.; Destler, W.W.; Granatstein, V.L.; Antonsen, T.M.; Levush, B.; Rodgers, J.; Zhang, Z.X.

1996-01-01

The results of experiments with a short period (9.6 mm) wiggler sheet electron beam (1.0 mm x 2.0 cm) millimeter-wave free electron laser (FEL) amplifier are presented. This FEL amplifier utilized a strong wiggler field for sheet beam confinement in the narrow beam dimension and an offset-pole side-focusing technique for the wide dimension beam confinement. The beam analysis herein includes finite emittance and space-charge effects. High-current beam propagation was achieved as a result of extensive analytical studies and experimental optimization. A design optimization resulted in a low sensitivity to structure errors and beam velocity spread, as well as a low required beam energy. A maximum gain of 24 dB was achieved with a 1-kW injected signal power at 86 GHz, a 450-kV beam voltage, 17-A beam current, 3.8-kG wiggler magnetic field, and a 74-period wiggler length. The maximum gain with a one-watt injected millimeter-wave power was observed to be over 30 dB. The lower gain at higher injection power level indicates that the device has approached saturation. The device was studied over a broad range of experimental parameters. The experimental results have a good agreement with expectations from a one-dimensional simulation code. The successful operation of this device has proven the feasibility of the original concept and demonstrated the advantages of the sheet beam FEL amplifier. The results of the studies will provide guidelines for the future development of sheet beam FEL's and/or other kinds of sheet beam devices. These devices have fusion application

Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 μm Invited Paper

Institute of Scientific and Technical Information of China (English)

D. Bimberg; C. Meuer; M. L(a)mmlin; S. Liebich; J. Kim; A. Kovsh; I. Krestnikov; G. Eisenstein

2008-01-01

@@ The dynamics of nonlinear processes in quantum dot (QD) semiconductor optical amplifiers (SOAs) are investigated. Using small-signal measurements, the suitabilities of cross-gain and cross-phase modulation as well as four wave mixing (FWM) for wavelength conversion are examined. The cross-gain modulation is found to be suitable for wavelength conversion up to a frequency of 40 GHz.

5 Watt GaN HEMT Power Amplifier for LTE

Directory of Open Access Journals (Sweden)

K. Niotaki

2014-04-01

Full Text Available This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39% for an output power of 36.7 dBm at 2.4 GHz for an input power of 25dBm. The carrier to intermodulation ratio is better than 25 dB for a two tone input signal of 25 dBm of total power and a spacing of 5 MHz. The fabricated device is also tested with LTE input signals of different bandwidths (5MHz to 20MHz.

Casimir forces in multilayer magnetodielectrics with both gain and loss

DEFF Research Database (Denmark)

Amooghorban, Ehsan; Wubs, Martijn; Mortensen, N. Asger

2011-01-01

of the amplifying medium, with negative imaginary parts in finite frequency intervals, are identified and their relationships to microscopic coupling functions are determined. By carefully relating the two-point functions of the field theory to the optical Green functions, we calculate the Casimir energy...... and Casimir forces for a multilayer magnetodielectric medium with both gain and loss. We point out the essential differences with a purely passive layered medium. For a single layer, we find different bounds on the Casimir force for fully amplifying and for lossy media. The force is attractive in both cases...

Development of high sensitivity transimpedance amplifier module for self powered neutron detectors

International Nuclear Information System (INIS)

Khan, T.K.; Tamboli, P.K.; Antony, J.; Balasubramanian, R.; Agilandaeswari, K.; Pramanik, M.

2010-01-01

This paper describes design and development of a Transimpedance Amplifier for amplification of very low current from in core Self Powered Neutron Detectors (SPND). Measurement of neutron flux is very important for operation, control and protection of Nuclear Power Plant (NPP). SPND is used to measure Reactor incore flux/power. Based on sensitivity of emitter material used in SPND, pitch length and neutron flux (power level); the current output from SPND varies from few pA to few μA. The described amplifier is suitable to use for this current range. The amplifier provides a very high gain using a resistive T network feedback topology. The amplifier is designed in two stages using ultra low bias current FET OPAMPs. Design of Transimpedance amplifier is carefully done to include ultra low input bias current, low offset voltage and noise. The amplifier has in built test facility for calibration and on line test facility for measurement of insulation resistance (IR). The amplifier module has on board isolated DC-DC converter circuit complying MIL/STD/461C/D which generate isolated +/-15V and +12V supply to provide parameter to parameter ground isolation and independence among each module/signal.The output from the amplifier is 0V to 6V for 0 to 150%FP. The design is simulated in computer and amplifier used at TAPS-3 was modified as per new design and has been tested at TAPS-3 site. The amplifier performed satisfactorily. The results showed that the IR measurement technique adopted in the design can tolerate lower IR of SPND in existing design. (author)

Beam quality management by periodic reproduction of wavefront aberrations in end-pumped Nd:YVO4 laser amplifiers.

Science.gov (United States)

Liu, Bin; Liu, Chong; Shen, Lifeng; Wang, Chunhua; Ye, Zhibin; Liu, Dong; Xiang, Zhen

2016-04-18

A method for beam quality management is presented in a master oscillator power amplifier (MOPA) using Nd:YVO4 as the gain medium by extra-cavity periodic reproduction of wavefront aberrations. The wavefront aberration evolution of the intra-cavity beams is investigated for both symmetrical and asymmetrical resonators. The wavefront aberration reproduction process is successfully realized outside the cavity in four-stage amplifiers. In the MOPA with a symmetrical oscillator, the laser power increases linearly and the beam quality hardly changes. In the MOPA with an asymmetrical oscillator, the beam quality is deteriorated after the odd-stage amplifier and is improved after the even-stage amplifier. The wavefront aberration reproduction during the extra-cavity beam propagation in the amplifiers is equivalent to that during the intra-cavity propagation. This solution helps to achieve the effective beam quality management in laser amplifier chains.

A photodiode amplifier system for pulse-by-pulse intensity measurement of an x-ray free electron laser.

Science.gov (United States)

Kudo, Togo; Tono, Kensuke; Yabashi, Makina; Togashi, Tadashi; Sato, Takahiro; Inubushi, Yuichi; Omodani, Motohiko; Kirihara, Yoichi; Matsushita, Tomohiro; Kobayashi, Kazuo; Yamaga, Mitsuhiro; Uchiyama, Sadayuki; Hatsui, Takaki

2012-04-01

We have developed a single-shot intensity-measurement system using a silicon positive-intrinsic-negative (PIN) photodiode for x-ray pulses from an x-ray free electron laser. A wide dynamic range (10(3)-10(11) photons/pulse) and long distance signal transmission (>100 m) were required for this measurement system. For this purpose, we developed charge-sensitive and shaping amplifiers, which can process charge pulses with a wide dynamic range and variable durations (ns-μs) and charge levels (pC-μC). Output signals from the amplifiers were transmitted to a data acquisition system through a long cable in the form of a differential signal. The x-ray pulse intensities were calculated from the peak values of the signals by a waveform fitting procedure. This system can measure 10(3)-10(9) photons/pulse of ~10 keV x-rays by direct irradiation of a silicon PIN photodiode, and from 10(7)-10(11) photons/pulse by detecting the x-rays scattered by a diamond film using the silicon PIN photodiode. This system gives a relative accuracy of ~10(-3) with a proper gain setting of the amplifiers for each measurement. Using this system, we succeeded in detecting weak light at the developmental phase of the light source, as well as intense light during lasing of the x-ray free electron laser. © 2012 American Institute of Physics

Design of the 150 kW, 46-62 MHz power amplifier for the TRIUMF KAON factory booster ring

International Nuclear Information System (INIS)

Kwiatkowski, S.; Enegren, T.; Poirier, R.L.

1988-06-01

The rf amplifiers for the KAON Factory booster ring must be capable of reactively compensating (detuning) for the injected/extracted beam load as well as providing the beam power and the cavity losses. In order to insure the stability of the rf system under heavy transient and steady state beam loading conditions it is necessary to equip the power amplifiers with fast rf feedback with sufficient gain and bandwidth to reduce the apparent Q of the rf amplifier system as seen by the beam and the other feedback loops. The maximum gain and bandwidth of such a feedback loop is limited by the propagation delay around the feedback path. To minimize the propagation delay a 2.4 kW two stage solid state driver will be used to drive the cathode of the Eimac Y567B tetrode to give an overall propagation delay less than 30 nS. The design features of the rf amplifier to meet the above conditions will be described and test results reported. (Author) (7 refs., 7 figs.)

A high PSRR Class-D audio amplifier IC based on a self-adjusting voltage reference

OpenAIRE

Huffenus , Alexandre; Pillonnet , Gaël; Abouchi , Nacer; Goutti , Frédéric; Rabary , Vincent; Cittadini , Robert

2010-01-01

International audience; In a wide range of applications, audio amplifiers require a large Power Supply Rejection Ratio (PSRR) that the current Class-D architecture cannot reach. This paper proposes a self-adjusting internal voltage reference scheme that sets the bias voltages of the amplifier without losing on output dynamics. This solution relaxes the constraints on gain and feedback resistors matching that were previously the limiting factor for the PSRR. Theory of operation, design and IC ...

Random amplified polymorphic DNA (RAPD) markers reveal genetic ...

African Journals Online (AJOL)

The present study evaluated genetic variability of superior bael genotypes collected from different parts of Andaman Islands, India using fruit characters and random amplified polymorphic DNA (RAPD) markers. Genomic DNA extracted from leaf material using cetyl trimethyl ammonium bromide (CTAB) method was ...

Study on the ELDRS of bipolar linear operational amplifier

International Nuclear Information System (INIS)

Yang Hui; Liu Yanfang; Chen Yu; Bai Hua; Zhang Dong

2011-01-01

Bipolar linear devices laboratory irradiation testing results are significantly different from the actual in flight exposure to the radiation. In this paper the total dose irradiation of operational amplifiers, and analysis upon the total dose response of these bipolar circuits under the different test conditions were investigated in the same experiment. Total dose tests of bipolar linear operational amplifiers show susceptible to dose rate, bias and room temperature annealing during exposure. The critical sensitive parameters of operational amplifier are input bias current, input offset current, input offset voltage, and open loop gain, which exhibits both bias and dose rate dependence. With calculating the change of each electrical parameter (Δpara) for each sample at 300 Gy radiation level, it has been found that ratio of the Δpara at low dose rate to the Δpara at high dose rate exceeds 2.46 times for any of the parameters. So these parts are considered to be ELDRS susceptible. After room temperature annealing, the main parameters have time dependence effect at low dose rate and without time dependent effect at high dose rate. (authors)

An 8–18 GHz broadband high power amplifier

International Nuclear Information System (INIS)

Wang Lifa; Yang Ruixia; Li Yanlei; Wu Jingfeng

2011-01-01

An 8–18 GHz broadband high power amplifier (HPA) with a hybrid integrated circuit (HIC) is designed and fabricated. This HPA is achieved with the use of a 4-fingered micro-strip Lange coupler in a GaAs MMIC process. In order to decrease electromagnetic interference, a multilayer AlN material with good heat dissipation is adopted as the carrier of the power amplifier. When the input power is 25 dBm, the saturated power of the continuous wave (CW) outputted by the power amplifier is more than 39 dBm within the frequency range of 8–13 GHz, while it is more than 38.6 dBm within other frequency ranges. We obtain the peak power output, 39.4 dBm, at the frequency of 11.9 GHz. In the whole frequency band, the power-added efficiency is more than 18%. When the input power is 18 dBm, the small signal gain is 15.7 ± 0.7 dB. The dimensions of the HPA are 25 × 15 × 1.5 mm 3 . (semiconductor integrated circuits)

Amplifier channel for a fission fragment semiconductor detector

International Nuclear Information System (INIS)

Tyurin, G.P.

1981-01-01

To compensate the decrease of the transformation coefficient of fission fragment semiconductor detector (SCD) developed is a special amplification channel with controlled transfer coefficient. The block diagram of the channel is presented, the main functional units of which are as follows: preamplifying head with charge-sensitive and timing preamplifiers, linear amplifier and the circuit of spectrum position stabilization, which includes a differential discriminator, integrator and reference signal generator. The amplification channel is made in the CAMAC standard and has the following specifications: dinamical input capacitance of charge-sensitive amplifier c=10000 n PHI, signal amplitude at output of the linear amplifier at energy of fission fragments of 120 MeV has negative polarity and is equal to 5 V. Pulse amplitude change at SCD sensitivity decrease to 50% constitutes not more than 1%. Timing preamplifier has the gain factor at voltage of K=80 at front duration of 3.5 nc. Time resolution of the amplification channel is not worse than 1 nc. Dimensions of preamplifying head are 40x40x15 mm. The amplification channel permitted to use SCD for long-term measurements of fission fragment spectra [ru

Modeling of a pump-power-controlled gain-locking system for multi-pump wideband Raman fibre amplifiers

Czech Academy of Sciences Publication Activity Database

Karásek, Miroslav; Kaňka, Jiří; Honzátko, Pavel; Peterka, Pavel

2004-01-01

Roč. 151, č. 2 (2004), s. 74-80 ISSN 1350-2433 R&D Projects: GA AV ČR IAA2067202 Institutional research plan: CEZ:AV0Z2067918 Keywords : wavelength division multiplexing * optical fibre amplifiers Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.900, year: 2004

Linear pulse amplifier

International Nuclear Information System (INIS)

Tjutju, R.L.

1977-01-01

Pulse amplifier is standard significant part of spectrometer. Apart from other type of amplification, it's a combination of amplification and pulse shaping. Because of its special purpose the device should fulfill the following : High resolution is desired to gain a high yield comparable to its actual state of condition. High signal to noise is desired to nhν resolution. High linearity to facilitate calibration. A good overload recovery, in order to the device will capable of analizing a low energy radiation which appear joinly on the high energy fields. Other expections of the device are its economical and practical use its extentive application. For that reason it's built on a standard NIM principle. Taking also into account the above mentioned considerations. High quality component parts are used throughout, while its availability in the domestic market is secured. (author)

A compact broadband high efficient X-band 9-watt PHEMT MMIC high-power amplifier for phased array radar applications

NARCIS (Netherlands)

Hek, A.P. de; Hunneman, P.A.H.; Demmler, M.; Hulsmann, A.

1999-01-01

ln this paper the development and measurement results of a compact broadband 9-Watt high efficient X-band high-power amplifier are discussed. The described amplifier has the following state-of-the art performance: an average ouput power of 9 Watt, a gain of 20 dB and an average Power Added

LED-pumped Alexandrite laser oscillator and amplifier

Science.gov (United States)

Pichon, Pierre; Blanchot, Jean-Philippe; Balembois, François; Druon, Frédéric; Georges, Patrick

2018-02-01

In this paper, we report the first LED-pumped transition-metal-doped laser oscillator and amplifier based on an alexandrite crystal (Cr3+:BeAl2O4). A Ce:YAG luminescent concentrator illuminated by blue LEDs is used to reach higher pump powers than with LEDs alone. The luminescent 200-mm-long-composit luminescent concentrator involving 2240 LEDs can delivers up to 268 mJ for a peak irradiance of 8.5 kW/cm2. In oscillator configuration, an LED-pumped alexandrite laser delivering an energy of 2.9 mJ at 748 nm in free running operation is demonstrated. In the cavity, we measured a double pass small signal gain of 1.28, in good agreement with numerical simulations. As amplifier, the system demonstrated to boost a CW Ti:sapphire laser by a factor of 4 at 750 nm in 8 passes with a large tuning range from 710 nm to 800 nm.

Dependence of gain and phase-shift on crystal parameters

Indian Academy of Sciences (India)

The steady-state amplification of light beam during two-wave mixing in photorefractive materials has been analysed in the strong nonlinear regime. The oscillation conditions for unidirectional ring resonator have been studied. The signal beam can be amplified in the presence of material absorption, provided the gain due to ...

A Low-Power CMOS Trans-Impedance Amplifier for 2.5 Gb/S Optical Communication Systems

Directory of Open Access Journals (Sweden)

Mojgan Mohseni

2013-01-01

Full Text Available This Paper presents a new Trans-impedance amplifier for optical receiver circuits. The amplifier is based on parallel (R-C feedback topology which is optimized for power consumption and uses shunt-peaking technique to enhance the frequency bandwidth of the amplifier. However, the circuit is designed and simulated using 0.18µm CMOS technology parameters. As simulation results show, the amplifier has a gain of 67.5dBΩ, bandwidth of 3GHz while consumes only 12.16 mW power which shows a very good performance for using in a 2.5Gb/S (SONET OC-48 optical communication system. Finally, as the simulated Eye-Diagram shows, the circuit has a very good performance for a 2.5Gb/S system for a 10µA input current.

Design of adaptive filter amplifier in UV communication based on DSP

Science.gov (United States)

Lv, Zhaoshun; Wu, Hanping; Li, Junyu

2016-10-01

According to the problem of the weak signal at receiving end in UV communication, we design a high gain, continuously adjustable adaptive filter amplifier. Based on proposing overall technical indicators and analyzing its working principle of the signal amplifier, we use chip LMH6629MF and two chips of AD797BN to achieve three-level cascade amplification. And apply hardware of DSP TMS320VC5509A to implement digital filtering. Design and verification by Multisim, Protel 99SE and CCS, the results show that: the amplifier can realize continuously adjustable amplification from 1000 to 10000 times without distortion. Magnification error is <=%4@1000 10000. And equivalent input noise voltage of amplification circuit is <=6 nV/ √Hz @30KHz 45KHz, and realizing function of adaptive filtering. The design provides theoretical reference and technical support for the UV weak signal processing.

Slow-light-enhanced gain in active photonic crystal waveguides

DEFF Research Database (Denmark)

Ek, Sara; Hansen, Per Lunnemann; Chen, Yaohui

2014-01-01

Passive photonic crystals have been shown to exhibit a multitude of interesting phenomena, including slow-light propagation in line-defect waveguides. It was suggested that by incorporating an active material in the waveguide, slow light could be used to enhance the effective gain of the material......, which would have interesting application prospects, for example enabling ultra-compact optical amplifiers for integration in photonic chips. Here we experi- mentally investigate the gain of a photonic crystal membrane structure with embedded quantum wells. We find that by solely changing the photonic...... crystal structural parameters, the maximum value of the gain coefficient can be increased compared with a ridge waveguide structure and at the same time the spectral position of the peak gain be controlled. The experimental results are in qualitative agreement with theory and show that gain values similar...

Three mode Er3+ ring-doped fiber amplifier for mode-division multiplexed transmission

NARCIS (Netherlands)

Jung, Y.; Kang, Q.; Sleiffer, V.A.J.M.; Inan, B.; Kuschnerov, M.; Veljanovski, V.; Corbett, B.; Winfield, R.; Li, Z.; Teh, P.S.; Dhar, A.; Sahu, J.K.; Poletti, F.; Alam, S.U.; Richardson, D.J.

2013-01-01

We successfully fabricate three-mode erbium doped fiber with a confined Er3+ doped ring structure and experimentally characterize the amplifier performance with a view to mode-division multiplexed (MDM) transmission. The differential modal gain was effectively mitigated by controlling the relative

Testing methodologies and systems for semiconductor optical amplifiers

Science.gov (United States)

Wieckowski, Michael

Semiconductor optical amplifiers (SOA's) are gaining increased prominence in both optical communication systems and high-speed optical processing systems, due primarily to their unique nonlinear characteristics. This in turn, has raised questions regarding their lifetime performance reliability and has generated a demand for effective testing techniques. This is especially critical for industries utilizing SOA's as components for system-in-package products. It is important to note that very little research to date has been conducted in this area, even though production volume and market demand has continued to increase. In this thesis, the reliability of dilute-mode InP semiconductor optical amplifiers is studied experimentally and theoretically. The aging characteristics of the production level devices are demonstrated and the necessary techniques to accurately characterize them are presented. In addition, this work proposes a new methodology for characterizing the optical performance of these devices using measurements in the electrical domain. It is shown that optical performance degradation, specifically with respect to gain, can be directly qualified through measurements of electrical subthreshold differential resistance. This metric exhibits a linear proportionality to the defect concentration in the active region, and as such, can be used for prescreening devices before employing traditional optical testing methods. A complete theoretical analysis is developed in this work to explain this relationship based upon the device's current-voltage curve and its associated leakage and recombination currents. These results are then extended to realize new techniques for testing semiconductor optical amplifiers and other similarly structured devices. These techniques can be employed after fabrication and during packaged operation through the use of a proposed stand-alone testing system, or using a proposed integrated CMOS self-testing circuit. Both methods are capable

A Front End for Multipetawatt Lasers Based on a High-Energy, High-Average-Power Optical Parametric Chirped-Pulse Amplifier

International Nuclear Information System (INIS)

Bagnoud, V.

2004-01-01

We report on a high-energy, high-average-power optical parametric chirped-pulse amplifier developed as the front end for the OMEGA EP laser. The amplifier provides a gain larger than 109 in two stages leading to a total energy of 400 mJ with a pump-to-signal conversion efficiency higher than 25%

Design of Amplifier Circuit for the HT-7 Tokamak Thomson Scattering System

International Nuclear Information System (INIS)

Shi Lingwei; Ling Bili; Zhao Junyu; Yang Li; Zang Qing; Hu Qingsheng; Jia Yanqing

2008-01-01

Thomson scattering diagnostic is important for measuring electron temperature and density profiles. To improve the signal-to-noise ratio, a silicon avalanche photodiode (APD) with high quantum efficiency, high sensitivity, and high gain up to 100 was adopted to measure the Thomson scattering spectrum. A preamplifier, which has low noise, high bandwidth, and high sensitivity, was designed with suitable transimpedance. Using AD8367 as the post-amplifier, good performance of the APD readout electronics have been obtained. A discussion is presented on the performance of the amplifier using a laser diode to simulate the Thomson scattering light. The test results indicate that the designed circuit has a high amplifying factor and fast rising edge. So reduction of the integral gate of the CAMAC ADC converter can improve the signal-to-noise ratio. (brief communication and research note)

3-D numerical analysis of a high-gain free-electron laser

International Nuclear Information System (INIS)

Gallardo, J.C.

1988-01-01

We present a novel approach to the 3-dimensional high-gain free- electron laser amplifier problem. The method allows us to write the laser field as an integral equation which can be efficiently and accurately evaluated on a small computer. The model is general enough to allow the inclusion of various initial electron beam distributions to study the gain reduction mechanism and its dependence on the physical parameters. 16 refs., 8 figs., 1 tab

Auto-Zero Differential Amplifier

Science.gov (United States)

Quilligan, Gerard T. (Inventor); Aslam, Shahid (Inventor)

2017-01-01

An autozero amplifier may include a window comparator network to monitor an output offset of a differential amplifier. The autozero amplifier may also include an integrator to receive a signal from a latched window comparator network, and send an adjustment signal back to the differential amplifier to reduce an offset of the differential amplifier.

First operation of a wiggler-focused, sheet beam free electron laser amplifier

International Nuclear Information System (INIS)

Destler, W.W.; Cheng, S.; Zhang, Z.X.; Antonsen, T.M. Jr.; Granatstein, V.L.; Levush, B.; Rodgers, J.

1994-01-01

A wiggler-focused, sheet beam free electron laser (FEL) amplifier utilizing a short-period wiggler magnet has been proposed as a millimeter-wave source for current profile modification and/or electron cyclotron resonance heating of tokamak plasmas. As proposed, such an amplifier would operate at a frequency of approximately 100--200 GHz with an output power of 1--10 MW CW. Electron beam energy would be in the range 500--1000 keV. To test important aspects of this concept, an initial sheet beam FEL amplifier experiment has been performed using a 1 mmx2 cm sheet beam produced by a pulse line accelerator with a pulse duration of 100 ns. The 500--570 keV, 4--18 A sheet beam is propagated through a 56 period uniform wiggler (λ w =9.6 mm) with a peak wiggler amplitude of 2--5 kG. Linear amplification of a 5--10 W, 94 GHz signal injected in the TE 01 rectangular mode is observed. All features of the amplified signal, including pulse shape and duration, are in accordance with the predictions of numerical simulation. Amplified signal gain has been measured as a function of injected beam energy, current, and wiggler field amplitude and is also in good agreement with simulation results. Continuation of this experiment will involve studying nonlinear amplifier operation and adding a section of tapered wiggler

Linear and nonlinear analysis of high-power rf amplifiers

International Nuclear Information System (INIS)

Puglisi, M.

1983-01-01

After a survey of the state variable analysis method the final amplifier for the CBA is analyzed taking into account the real beam waveshape. An empirical method for checking the stability of a non-linear system is also considered

Effectiveness of Variable-Gain Kalman Filter Based on Angle Error Calculated from Acceleration Signals in Lower Limb Angle Measurement with Inertial Sensors

Science.gov (United States)

Watanabe, Takashi

2013-01-01

The wearable sensor system developed by our group, which measured lower limb angles using Kalman-filtering-based method, was suggested to be useful in evaluation of gait function for rehabilitation support. However, it was expected to reduce variations of measurement errors. In this paper, a variable-Kalman-gain method based on angle error that was calculated from acceleration signals was proposed to improve measurement accuracy. The proposed method was tested comparing to fixed-gain Kalman filter and a variable-Kalman-gain method that was based on acceleration magnitude used in previous studies. First, in angle measurement in treadmill walking, the proposed method measured lower limb angles with the highest measurement accuracy and improved significantly foot inclination angle measurement, while it improved slightly shank and thigh inclination angles. The variable-gain method based on acceleration magnitude was not effective for our Kalman filter system. Then, in angle measurement of a rigid body model, it was shown that the proposed method had measurement accuracy similar to or higher than results seen in other studies that used markers of camera-based motion measurement system fixing on a rigid plate together with a sensor or on the sensor directly. The proposed method was found to be effective in angle measurement with inertial sensors. PMID:24282442

Injection seeded, diode pumped regenerative ring Nd:YAG amplifier for spaceborne laser ranging technology development

Science.gov (United States)

Coyle, D. Barry; Kay, Richard B.; Degnan, John J.; Krebs, Danny J.; Seery, Bernard D.

1992-01-01

A small, all solid state, regenerative ring amplifier designed as a prototype for space application is discussed. Novel features include dual side pumping of the Nd:YAG crystal and a triangular ring cavity design which minimizes the number of optical components and losses. The amplifier is relatively small (3 ns round trip time) even though standard optical elements are employed. The ring regeneratively amplifies a 100 ps single pulse by approximately 10(exp 5) at a repetition rate of 10 to 100 Hz. The amplifier is designed to be injection seeded with a pulsed, 100 ps laser diode at 1.06 microns, but another Nd:YAG laser system supplying higher pulse energies was employed for laboratory experiment. This system is a prototype laser oscillator for the Geoscience Laser Ranging System (GLRS) platform. Results on measurements of beam quality, astigmatism, and gain are given.

Genetic variability of cultivated cowpea in Benin assessed by random amplified polymorphic DNA

NARCIS (Netherlands)

Zannou, A.; Kossou, D.K.; Ahanchédé, A.; Zoundjihékpon, J.; Agbicodo, E.; Struik, P.C.; Sanni, A.

2008-01-01

Characterization of genetic diversity among cultivated cowpea [Vigna unguiculata (L.) Walp.] varieties is important to optimize the use of available genetic resources by farmers, local communities, researchers and breeders. Random amplified polymorphic DNA (RAPD) markers were used to evaluate the

Spectroscopic amplifier for pin diode; Amplificador espectroscopico para diodo Pin

Energy Technology Data Exchange (ETDEWEB)

Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R., E-mail: bebe.luna_s@hotmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

2014-10-15

The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

A digitally assisted, signal folding neural recording amplifier.

Science.gov (United States)

Chen, Yi; Basu, Arindam; Liu, Lei; Zou, Xiaodan; Rajkumar, Ramamoorthy; Dawe, Gavin Stewart; Je, Minkyu

2014-08-01

A novel signal folding and reconstruction scheme for neural recording applications that exploits the 1/f(n) characteristics of neural signals is described in this paper. The amplified output is 'folded' into a predefined range of voltages by using comparison and reset circuits along with the core amplifier. After this output signal is digitized and transmitted, a reconstruction algorithm can be applied in the digital domain to recover the amplified signal from the folded waveform. This scheme enables the use of an analog-to-digital convertor with less number of bits for the same effective dynamic range. It also reduces the transmission data rate of the recording chip. Both of these features allow power and area savings at the system level. Other advantages of the proposed topology are increased reliability due to the removal of pseudo-resistors, lower harmonic distortion and low-voltage operation. An analysis of the reconstruction error introduced by this scheme is presented along with a behavioral model to provide a quick estimate of the post reconstruction dynamic range. Measurement results from two different core amplifier designs in 65 nm and 180 nm CMOS processes are presented to prove the generality of the proposed scheme in the neural recording applications. Operating from a 1 V power supply, the amplifier in 180 nm CMOS has a gain of 54.2 dB, bandwidth of 5.7 kHz, input referred noise of 3.8 μVrms and power dissipation of 2.52 μW leading to a NEF of 3.1 in spike band. It exhibits a dynamic range of 66 dB and maximum SNDR of 43 dB in LFP band. It also reduces system level power (by reducing the number of bits in the ADC by 2) as well as data rate to 80% of a conventional design. In vivo measurements validate the ability of this amplifier to simultaneously record spike and LFP signals.

Study on high gain broadband optical parametric chirped pulse amplification

International Nuclear Information System (INIS)

Zhang, S.K.; Fujita, M.; Yamanaka, C.; Yoshida, H.; Kodama, R.; Fujita, H.; Nakatsuka, M.; Izawa, Y.

2000-01-01

Optical parametric chirped pulse amplification has apparent advantages over the current schemes for high energy ultrashort pulse amplification. High gain in a single pass amplification, small B-integral, low heat deposition, high contrast ratio and, especially the extremely broad gain bandwidth with large-size crystals available bring people new hope for over multi-PW level at which the existing Nd:glass systems suffered difficulties. In this paper we present simulation and experimental studies for a high gain optical parametric chirped pulse amplification system which may be used as a preamplifier to replace the current complicated regenerative system or multi-pass Ti:sapphire amplifiers. Investigations on the amplification bandwidth and gain with BBO are performed. Analysis and discussions are also given. (author)

Experimental studies of x-ray laser spectral profiles: Observation of gain narrowing and saturation behavior

International Nuclear Information System (INIS)

Koch, J.A.; MacGowan, B.J.; Da Silva, L.B.; Matthews, D.L.; Mrowka, S.; Underwood, J.H.; Batson, P.J.

1992-01-01

We discuss our recent measurements of the spectral width of the 206.38 Angstrom x-ray laser transition in Ne-like Se. These measurements used a high-resolution grating spectrometer and were performed over a wide range of laser amplifier lengths. The data have enabled us to extrapolate the intrinsic line width and to observe the effects of gain-narrowing and saturation on the line profile. We find an intrinsic width which is 1.4 times the Doppler width, we observe gain-narrowing in intermediate length amplifiers, and we observe no re-broadening in long, saturated amplifiers. These results suggest that collisional line-broadening has a significant effect on the line profile and saturation behavior of this laser. We discuss modeling we have performed in order to simulate the experimental data, and we discuss future experimental and theoretical efforts we believe are necessary in order to understand line broadening and line transfer issues in x-ray laser plasmas

Amplified spontaneous emission of an end-pumped cesium vapor laser

International Nuclear Information System (INIS)

An, Guofei; Wang, You; Cai, He; Han, Juhong; Wang, Shunyan; Rong, Kepeng; Yu, Hang; Xue, Liangping; Zhang, Wei; Wang, Hongyuan; Zhou, Jie

2017-01-01

Diode pumped alkali lasers (DPALs) provide a significant potential for construction of high-powered lasers. A series of models have been established to analyze the DPAL’s kinetic process and most of them are based on the algorithms in which the amplified spontaneous emission (ASE) effect has not been considered. However, ASE is harmful in realization of a high-powered DPAL since the gain is very high. Usually, ASE becomes serious when the volume of the gain medium is large and the pump power is high. Basically, the conclusions we obtained in this study can be extended to other kinds of laser configurations. (paper)

X-ray amplifier energy deposition scaling with channeled propagation

International Nuclear Information System (INIS)

Boyer, K.; Luk, T.S.; McPherson, A.

1991-01-01

The spatial control of the energy deposited for excitation of an x-ray amplifier plays an important role in the fundamental scaling relationship between the required energy, the gain and the wavelength. New results concerning the ability to establish confined modes of propagation of sort pulse radiation of sufficiently high intensity in plasmas lead to a sharply reduced need for the total energy deposited, since the concentration of deposited power can be very efficiently organized

Self-amplified spontaneous emission for short wavelength coherent radiation

International Nuclear Information System (INIS)

Kim, K.J.; Xie, M.

1992-09-01

We review the recent progress in our understanding of the self-amplified spontaneous emission (SASE), emphasizing the application to short wavelength generation. Simple formulae are given for the start-up, exponential gain and the saturation of SASE. Accelerator technologies producing high brightness electron beams required for short wavelength SASE are discussed. An example utilizing electron beams from a photocathode-linac system to produce 4nm SASE in the multigigawatt range is presented

Performance of the THS4302 and the Class V Radiation-Tolerant THS4304-SP Silicon Germanium Wideband Amplifiers at Extreme Temperatures

Science.gov (United States)

Patterson, Richard L.; Elbuluk, Malik; Hammoud, Ahmad; VanKeuls, Frederick W.

2009-01-01

This report discusses the performance of silicon germanium, wideband gain amplifiers under extreme temperatures. The investigated devices include Texas Instruments THS4304-SP and THS4302 amplifiers. Both chips are manufactured using the BiCom3 process based on silicon germanium technology along with silicon-on-insulator (SOI) buried oxide layers. The THS4304-SP device was chosen because it is a Class V radiation-tolerant (150 kRad, TID silicon), voltage-feedback operational amplifier designed for use in high-speed analog signal applications and is very desirable for NASA missions. It operates with a single 5 V power supply [1]. It comes in a 10-pin ceramic flatpack package, and it provides balanced inputs, low offset voltage and offset current, and high common mode rejection ratio. The fixed-gain THS4302 chip, which comes in a 16-pin leadless package, offers high bandwidth, high slew rate, low noise, and low distortion [2]. Such features have made the amplifier useful in a number of applications such as wideband signal processing, wireless transceivers, intermediate frequency (IF) amplifier, analog-to-digital converter (ADC) preamplifier, digital-to-analog converter (DAC) output buffer, measurement instrumentation, and medical and industrial imaging.

Semi-custom integrated circuit amplifier and level discriminator for nuclear and space instruments

International Nuclear Information System (INIS)

Hahn, S.F.; Cafferty, M.M.

1991-01-01

This paper reports on the development an extra fast current feedback amplifier and a level discriminator employing a dielectrically-isolated bipolar, semi-custom Application Specific Integrated Circuit (ASIC) process. These devices are specifically designed for instruments aboard spacecrafts or in portable packages requiring low power and weight. The amplifier adopts current feedback for a unity-gain bandwidth of 90 MHz while consuming 50 mW. The level discriminator uses a complementary output driver for balanced positive and negative response times. The power consumption of these devices can be programmed by external resistors for optimal speed and power trade-off

Semi-custom integrated circuit amplifier and level discriminator for nuclear and space instruments

International Nuclear Information System (INIS)

Hahn, S.F.; Cafferty, M.M.

1990-01-01

This paper reports an extra fast current feedback amplifier and a level discriminator developed employing a dielectrically isolated bipolar, semi-custom Application Specific Integrated Circuit (ASIC) process. These devices are specifically designed for instruments aboard spacecrafts or in portable packages requiring low power and weight. The amplifier adopts current feedback for a unity- gain bandwidth of 90 MHz while consuming 50 mW. The level discriminator uses a complementary output driver for balanced positive and negative response times. The power consumption of these devices can be programmed by external resistors for optimal speed and power trade-off

Portable musical instrument amplifier

Science.gov (United States)

Christian, David E.

1990-07-24

The present invention relates to a musical instrument amplifier which is particularly useful for electric guitars. The amplifier has a rigid body for housing both the electronic system for amplifying and processing signals from the guitar and the system's power supply. An input plug connected to and projecting from the body is electrically coupled to the signal amplifying and processing system. When the plug is inserted into an output jack for an electric guitar, the body is rigidly carried by the guitar, and the guitar is operatively connected to the electrical amplifying and signal processing system without use of a loose interconnection cable. The amplifier is provided with an output jack, into which headphones are plugged to receive amplified signals from the guitar. By eliminating the conventional interconnection cable, the amplifier of the present invention can be used by musicians with increased flexibility and greater freedom of movement.

BiCMOS amplifier-discriminator integrated circuit for gas-filled detector readout

International Nuclear Information System (INIS)

Herve, C.; Dzahini, D.; Le Caer, T.; Richer, J.-P.; Torki, K.

2005-01-01

The paper presents a 16-channel amplifier-discriminator designed in BiCMOS technology. It will be used for the binary parallel readout of gas-filled detectors being designed at the European Synchrotron Radiation Facility. The circuit (named AMS211) has been manufactured. The measured transimpedance gain (400 KΩ), bandwidth (25 MHz) and noise (1570 e - +95 e - /pF ENC) well match the simulated results. The discriminator thresholds are individually controlled by built-in Digital to Analogue Converter. The experience gained with a first prototype of readout electronics indicates that the AMS211 should meet our requirements

BiCMOS amplifier-discriminator integrated circuit for gas-filled detector readout

Energy Technology Data Exchange (ETDEWEB)

Herve, C. [European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex (France)]. E-mail: herve@esrf.fr; Dzahini, D. [Laboratoire de Physique Subatomique et de Cosmologie, Grenoble (France); Le Caer, T. [European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex (France); Richer, J.-P. [Laboratoire de Physique Subatomique et de Cosmologie, Grenoble (France); Torki, K. [Laboratoire TIMA, Grenoble (France)

2005-03-21

The paper presents a 16-channel amplifier-discriminator designed in BiCMOS technology. It will be used for the binary parallel readout of gas-filled detectors being designed at the European Synchrotron Radiation Facility. The circuit (named AMS211) has been manufactured. The measured transimpedance gain (400 K{omega}), bandwidth (25 MHz) and noise (1570 e{sup -}+95 e{sup -}/pF ENC) well match the simulated results. The discriminator thresholds are individually controlled by built-in Digital to Analogue Converter. The experience gained with a first prototype of readout electronics indicates that the AMS211 should meet our requirements.

Efficient ASE management in disk laser amplifiers with variable absorbing clads

Czech Academy of Sciences Publication Activity Database

Slezák, Ondřej; Lucianetti, Antonio; Mocek, Tomáš

2014-01-01

Roč. 50, č. 12 (2014), s. 1052-1060 ISSN 0018-9197 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk EE2.3.20.0143 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 6(XE) CZ.1.07/2.3.00/20.0143 Institutional support: RVO:68378271 Keywords : amplifiers * laser * absorbing * Yb:YAG * multi slab Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.887, year: 2014

High energy high repetition-rate thin-disk amplifier for OPCPA pumping

Energy Technology Data Exchange (ETDEWEB)

Schulz, Michael

2013-08-15

The development of a pump laser system for a high power and high repetition rate optical parametric chirped-pulse amplification (OPCPA) is presented in this thesis. The OPCPA system requires pump pulse energies in the range of tens of millijoules at high repetition rates with sub-picosecond pulse durations. This can be achieved to some extend with Innoslab amplifier technology. However, scaling to higher pulse energies at high repetition rates may be problematic. With the thin-disk amplifier presented in this thesis, output energies of 140 mJ at 100 kHz repetition rate could be achieved in burst-mode operation, which is a world record for this type of laser amplifier. Due to its material and spectral properties, ytterbium doped YAG (Yb:YAG) is used as a gain medium for the high power amplifier stages. The low quantum defect and the comparatively large emission bandwidth makes this material the choice for high power operation and sub-picosecond compressed pulse durations. The output beam profile as well as the shape of the output bursts is ideal to pump an OPCPA system. An OPCPA output energy in the millijoule range with repetition rates of 100 kHz to 1 MHz is needed to generate seed pulses for the FEL and for the application as pump-probe laser at the FEL facility. Since the development of this laser system needs to meet requirements set by the Free-Electron Laser in Hamburg (FLASH), the amplifier is conceived for burst-mode operation. The main requirement is a high intra-burst pulse repetition rate of more than 100 kHz and a uniform pulse train (burst) with equal properties for every pulse. The burst-mode is an operation mode where the laser never reaches a lasing equilibrium, which means that the behavior of the amplifier is similar to a switch-on of the laser system for every burst. This makes the development of the amplifier system difficult. Therefore, an analytical model has been developed to study the amplification process during the burst. This includes the

High energy high repetition-rate thin-disk amplifier for OPCPA pumping

International Nuclear Information System (INIS)

Schulz, Michael

2013-08-01

The development of a pump laser system for a high power and high repetition rate optical parametric chirped-pulse amplification (OPCPA) is presented in this thesis. The OPCPA system requires pump pulse energies in the range of tens of millijoules at high repetition rates with sub-picosecond pulse durations. This can be achieved to some extend with Innoslab amplifier technology. However, scaling to higher pulse energies at high repetition rates may be problematic. With the thin-disk amplifier presented in this thesis, output energies of 140 mJ at 100 kHz repetition rate could be achieved in burst-mode operation, which is a world record for this type of laser amplifier. Due to its material and spectral properties, ytterbium doped YAG (Yb:YAG) is used as a gain medium for the high power amplifier stages. The low quantum defect and the comparatively large emission bandwidth makes this material the choice for high power operation and sub-picosecond compressed pulse durations. The output beam profile as well as the shape of the output bursts is ideal to pump an OPCPA system. An OPCPA output energy in the millijoule range with repetition rates of 100 kHz to 1 MHz is needed to generate seed pulses for the FEL and for the application as pump-probe laser at the FEL facility. Since the development of this laser system needs to meet requirements set by the Free-Electron Laser in Hamburg (FLASH), the amplifier is conceived for burst-mode operation. The main requirement is a high intra-burst pulse repetition rate of more than 100 kHz and a uniform pulse train (burst) with equal properties for every pulse. The burst-mode is an operation mode where the laser never reaches a lasing equilibrium, which means that the behavior of the amplifier is similar to a switch-on of the laser system for every burst. This makes the development of the amplifier system difficult. Therefore, an analytical model has been developed to study the amplification process during the burst. This includes the

High efficiency RF amplifier development over wide dynamic range for accelerator application

Science.gov (United States)

Mishra, Jitendra Kumar; Ramarao, B. V.; Pande, Manjiri M.; Joshi, Gopal; Sharma, Archana; Singh, Pitamber

2017-10-01

Superconducting (SC) cavities in an accelerating section are designed to have the same geometrical velocity factor (βg). For these cavities, Radio Frequency (RF) power needed to accelerate charged particles varies with the particle velocity factor (β). RF power requirement from one cavity to other can vary by 2-5 dB within the accelerating section depending on the energy gain in the cavity and beam current. In this paper, we have presented an idea to improve operating efficiency of the SC RF accelerators using envelope tracking technique. A study on envelope tracking technique without feedback is carried out on a 1 kW, 325 MHz, class B (conduction angle of 180 degrees) tuned load power amplifier (PA). We have derived expressions for the efficiency and power output for tuned load amplifier operating on the envelope tracking technique. From the derived expressions, it is observed that under constant load resistance to the device (MOSFET), optimum amplifier efficiency is invariant whereas output power varies with the square of drain bias voltage. Experimental results on 1 kW PA module show that its optimum efficiency is always greater than 62% with variation less than 5% from mean value over 7 dB dynamic range. Low power amplifier modules are the basic building block for the high power amplifiers. Therefore, results for 1 kW PA modules remain valid for the high power solid state amplifiers built using these PA modules. The SC RF accelerators using these constant efficiency power amplifiers can improve overall accelerator efficiency.

Signal and noise analysis of a-Si:H radiation detector-amplifier system

International Nuclear Information System (INIS)

Cho, Gyuseong.

1992-03-01

Hydrogenated amorphous silicon (a-Si:H) has potential advantages in making radiation detectors for many applications because of its deposition capability on a large-area substrate and its high radiation resistance. Position-sensitive radiation detectors can be made out of a 1d strip or a 2-d pixel array of a Si:H pin diodes. In addition, signal processing electronics can be made by thin-film transistors on the same substrate. The calculated radiation signal, based on a simple charge collection model agreed well with results from various wave length light sources and 1 MeV beta particles on sample diodes. The total noise of the detection system was analyzed into (a) shot noise and (b) 1/f noise from a detector diode, and (c) thermal noise and (d) 1/f noise from the frontend TFT of a charge-sensitive preamplifier. the effective noise charge calculated by convoluting these noise power spectra with the transfer function of a CR-RC shaping amplifier showed a good agreement with the direct measurements of noise charge. The derived equations of signal and noise charge can be used to design an a-Si:H pixel detector amplifier system optimally. Signals from a pixel can be readout using switching TFTs, or diodes. Prototype tests of a double-diode readout scheme showed that the storage time and the readout time are limited by the resistances of the reverse-biased pixel diode and the forward biased switching diodes respectively. A prototype charge-sensitive amplifier was made using poly-Si TFTs to test the feasibility of making pixel-level amplifiers which would be required in small-signal detection. The measured overall gain-bandwidth product was ∼400 MHz and the noise charge ∼1000 electrons at a 1 μsec shaping time. When the amplifier is connected to a pixel detector of capacitance 0.2 pF, it would give a charge-to-voltage gain of ∼0.02 mV/electron with a pulse rise time less than 100 nsec and a dynamic range of 48 dB

Signal and noise analysis of a-Si:H radiation detector-amplifier system

Energy Technology Data Exchange (ETDEWEB)

Cho, Gyuseong [Univ. of California, Berkeley, CA (United States)

1992-03-01

Hydrogenated amorphous silicon (a-Si:H) has potential advantages in making radiation detectors for many applications because of its deposition capability on a large-area substrate and its high radiation resistance. Position-sensitive radiation detectors can be made out of a 1d strip or a 2-d pixel array of a Si:H pin diodes. In addition, signal processing electronics can be made by thin-film transistors on the same substrate. The calculated radiation signal, based on a simple charge collection model agreed well with results from various wave length light sources and 1 MeV beta particles on sample diodes. The total noise of the detection system was analyzed into (a) shot noise and (b) 1/f noise from a detector diode, and (c) thermal noise and (d) 1/f noise from the frontend TFT of a charge-sensitive preamplifier. the effective noise charge calculated by convoluting these noise power spectra with the transfer function of a CR-RC shaping amplifier showed a good agreement with the direct measurements of noise charge. The derived equations of signal and noise charge can be used to design an a-Si:H pixel detector amplifier system optimally. Signals from a pixel can be readout using switching TFTs, or diodes. Prototype tests of a double-diode readout scheme showed that the storage time and the readout time are limited by the resistances of the reverse-biased pixel diode and the forward biased switching diodes respectively. A prototype charge-sensitive amplifier was made using poly-Si TFTs to test the feasibility of making pixel-level amplifiers which would be required in small-signal detection. The measured overall gain-bandwidth product was ~400 MHz and the noise charge ~1000 electrons at a 1 μsec shaping time. When the amplifier is connected to a pixel detector of capacitance 0.2 pF, it would give a charge-to-voltage gain of ~0.02 mV/electron with a pulse rise time less than 100 nsec and a dynamic range of 48 dB.

Signal and noise analysis of a-Si:H radiation detector-amplifier system

Energy Technology Data Exchange (ETDEWEB)

Cho, Gyuseong.

1992-03-01

Hydrogenated amorphous silicon (a-Si:H) has potential advantages in making radiation detectors for many applications because of its deposition capability on a large-area substrate and its high radiation resistance. Position-sensitive radiation detectors can be made out of a 1d strip or a 2-d pixel array of a Si:H pin diodes. In addition, signal processing electronics can be made by thin-film transistors on the same substrate. The calculated radiation signal, based on a simple charge collection model agreed well with results from various wave length light sources and 1 MeV beta particles on sample diodes. The total noise of the detection system was analyzed into (a) shot noise and (b) 1/f noise from a detector diode, and (c) thermal noise and (d) 1/f noise from the frontend TFT of a charge-sensitive preamplifier. the effective noise charge calculated by convoluting these noise power spectra with the transfer function of a CR-RC shaping amplifier showed a good agreement with the direct measurements of noise charge. The derived equations of signal and noise charge can be used to design an a-Si:H pixel detector amplifier system optimally. Signals from a pixel can be readout using switching TFTs, or diodes. Prototype tests of a double-diode readout scheme showed that the storage time and the readout time are limited by the resistances of the reverse-biased pixel diode and the forward biased switching diodes respectively. A prototype charge-sensitive amplifier was made using poly-Si TFTs to test the feasibility of making pixel-level amplifiers which would be required in small-signal detection. The measured overall gain-bandwidth product was {approximately}400 MHz and the noise charge {approximately}1000 electrons at a 1 {mu}sec shaping time. When the amplifier is connected to a pixel detector of capacitance 0.2 pF, it would give a charge-to-voltage gain of {approximately}0.02 mV/electron with a pulse rise time less than 100 nsec and a dynamic range of 48 dB.

Frequency-swept laser light source at 1050 nm with higher bandwidth due to multiple semiconductor optical amplifiers in series

DEFF Research Database (Denmark)

Marschall, Sebastian; Thrane, Lars; Andersen, Peter E.

2009-01-01

We report on the development of an all-fiber frequency-swept laser light source in the 1050 nm range based on semiconductor optical amplifiers (SOA) with improved bandwidth due to multiple gain media. It is demonstrated that even two SOAs with nearly equal gain spectra can improve the performance...

Hybrid Ytterbium-doped large-mode-area photonic crystal fiber amplifier for long wavelengths

DEFF Research Database (Denmark)

Petersen, Sidsel Rübner; Alkeskjold, Thomas T.; Poli, Federica

2012-01-01

A large-mode-area Ytterbium-doped photonic crystal fiber amplifier with build-in gain shaping is presented. The fiber cladding consists of a hexagonal lattice of air holes, where three rows are replaced with circular high-index inclusions. Seven missing air holes define the large-mode-area core. ...

Statistical Analysis of Coherent Ultrashort Light Pulse CDMA With Multiple Optical Amplifiers Using Additive Noise Model

Science.gov (United States)

Jamshidi, Kambiz; Salehi, Jawad A.

2005-05-01

This paper describes a study of the performance of various configurations for placing multiple optical amplifiers in a typical coherent ultrashort light pulse code-division multiple access (CULP-CDMA) communication system using the additive noise model. For this study, a comprehensive performance analysis was developed that takes into account multiple-access noise, noise due to optical amplifiers, and thermal noise using the saddle-point approximation technique. Prior to obtaining the overall system performance, the input/output statistical models for different elements of the system such as encoders/decoders,star coupler, and optical amplifiers were obtained. Performance comparisons between an ideal and lossless quantum-limited case and a typical CULP-CDMA with various losses exhibit more than 30 dB more power requirement to obtain the same bit-error rate (BER). Considering the saturation effect of optical amplifiers, this paper discusses an algorithm for amplifiers' gain setting in various stages of the network in order to overcome the nonlinear effects on signal modulation in optical amplifiers. Finally, using this algorithm,various configurations of multiple optical amplifiers in CULP-CDMA are discussed and the rules for the required optimum number of amplifiers are shown with their corresponding optimum locations to be implemented along the CULP-CDMA system.

Operation Amplifier

NARCIS (Netherlands)

Tetsuya, Saito; Nauta, Bram

2011-01-01

PROBLEM TO BE SOLVED: To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. SOLUTION: The operation amplifier comprises: a

Operation Amplifier

NARCIS (Netherlands)

Tetsuya, S.; Nauta, Bram

2007-01-01

PROBLEM TO BE SOLVED: To provide an operation amplifier which improves power source voltage removal ratios while assuring phase compensation characteristics, and therefore can be realized with a small-scale circuit and low power consumption. ; SOLUTION: The operation amplifier comprises: a

A Hybrid Fiber/Solid-State Regenerative Amplifier with Tunable Pulse Widths for Satellite Laser Ranging

Science.gov (United States)

Coyle, Barry; Poulios, Demetrios

2013-01-01

A fiber/solid-state hybrid seeded regenerative amplifier, capable of achieving high output energy with tunable pulse widths, has been developed for satellite laser ranging applications. The regenerative amplifier cavity uses a pair of Nd:YAG zigzag slabs oriented orthogonally to one another in order to make thermal lensing effects symmetrical and simplify optical correction schemes. The seed laser used is a fiber-coupled 1,064-nm narrowband (pumped by a single 120-W, pulsed 808-nm laser diode array. In this configuration, the average pump beam distribution in the slabs had a 1-D Gaussian shape, which matches the estimated cavity mode size. A half-wave plate between the slabs reduces losses from Fresnel reflections due to the orthogonal slabs Brewster-cut end faces. Successful "temporal" seeding of the regenerative amplifier cavity results in a cavity Q-switch pulse envelope segmenting into shorter pulses, each having the width of the input seed, and having a uniform temporal separation corresponding to the cavity round-trip time of approx. =10 ns. The pulse energy is allowed to build on successive passes in the regenerative amplifier cavity until a maximum is reached, (when cavity gains and losses are equal), after which the pulse is electro- optically switched out on the next round trip The overall gain of the amplifier is approx. =82 dB (or a factor of 1.26 million). After directing the amplified output through a LBO frequency doubling crystal, approx. = 2.1 W of 532-nm output (>1 mJ) was measured. This corresponds to a nonlinear conversion efficiency of >60%. Furthermore, by pulse pumping this system, a single pulse per laser shot can be created for the SLR (satellite laser ranging) measurement, and this can be ejected into the instrument. This is operated at the precise frequency needed by the measurement, as opposed to commercial short-pulsed, mode-locked systems that need to operate in a continuous fashion, or CW (continuous wave), and create pulses at many

Optimization of Multiple Active Ion Doped Fiber Amplifiers for Three Communication Windows

Directory of Open Access Journals (Sweden)

Chun Jiang

2009-01-01

Full Text Available We present for the first time a theoretical model of Er3+-Tm3+-Pr3+ codoped fiber pumped with both 800 nm and 980 nm lasers to explore possibility of this co-doped system as all-wave fiber amplifier. The rate and power propagation equations of the model are solved numerically and the dependence of the gains at 1310, 1470, 1530, 1600, 1650 nm windows on fiber length is calculated. The results show that with pump power of 200 mW/200 mW, when the concentrations of Pr3+, Tm3+, Er3+ are around 1.7×1024, 3.9×1024, 1.2×1024 (ions/m3, respectively, the signals at 1310, 1470, 1530, 1600, 1650 nm may be nearly equally amplified with gain of 13–16.0 dB in the active fiber with length of 23.5 m; the co-doping concentrations and fiber length and pump powers may be further optimized to reduce the ripple.

Enhanced 1.32 μm fluorescence and broadband amplifying for O-band optical amplifier in Nd3+-doped tellurite glass

Science.gov (United States)

Zhou, Zi-zhong; Zhou, Ming-han; Su, Xiu-e.; Cheng, Pan; Zhou, Ya-xun

2017-01-01

WO3 oxides with relatively high phonon energy and different concentrations were introduced into the Nd3+-doped tellurite-based glasses of TeO2-ZnO-Na2O to improve the 1.32 μm band fluorescence emission. The absorption spectra, Raman spectra, 1.32 μm band fluorescence spectra and differential scanning calorimeter (DSC) curves were measured, together with the Judd-Ofelt intensity parameters, stimulated emission and gain parameters were calculated to evaluate the effects of WO3 amount on the glass structure and spectroscopic properties of 1.32 μm band fluorescence. It is shown that the introduction of an appropriate amount of WO3 oxide can effectively improve the 1.32 μm band fluorescence intensity through the enhanced multi-phonon relaxation (MPR) processes between the excited levels of Nd3+. The results indicate that the prepared Nd3+-doped tellurite glass with an appropriate amount of WO3 oxide is a potential gain medium applied for the O-band broad and high-gain fiber amplifier.

A highly linear power amplifier for WLAN

International Nuclear Information System (INIS)

Jin Jie; Shi Jia; Ai Baoli; Zhang Xuguang

2016-01-01

A three-stage power amplifier (PA) for WLAN application in 2.4-2.5 GHz is presented. The proposed PA employs an adaptive bias circuit to adjust the operating point of the PA to improve the linearity of the PA. Two methods to short the 2nd harmonic circuit are compared in the area of efficiency and gain of the PA. The PA is taped out in the process of 2 μm InGaP/GaAs HBT and is tested by the evaluation board. The measured results show that 31.5 dB power gain and 29.3 dBm P 1dB with an associated 40.4% power added efficiency (PAE) under the single tone stimulus. Up to 26.5 dBm output power can be achieved with an error vector magnitude (EVM) of lower than 3% under the 64QAM/OFDM WLAN stimulus. (paper)

High-Performance BiCMOS Transimpedance Amplifiers for Fiber-Optic Receivers

Directory of Open Access Journals (Sweden)

F. Touati

2007-12-01

Full Text Available High gain, wide bandwidth, low noise, and low-power transimpedance amplifiers based on new BiCMOS common- base topologies have been designed for fiber-optic receivers. In particular a design approach, hereafter called "A more- FET approach", added a new dimension to effectively optimize performance tradeoffs inherent in such circuits. Using conventional silicon 0.8 μm process parameters, simulated performance features of a total-FET transimpedance amplifier operating at 7.2 GHz, which is close to the technology fT of 12 GHz, are presented. The results are superior to those of similar recent designs and comparable to IC designs using GaAs technology. A detailed analysis of the design architecture, including a discussion on the effects of moving toward more FET-based designs is presented.

Gain measurements at 182 /angstrom/ in C VI generated by a Nd/glass laser

International Nuclear Information System (INIS)

Kim, D.; Skinner, C.H.; Umesh, G.; Suckewer, S.

1988-11-01

We present recent gain measurements in C VI at 182 A for a soft x-ray amplifier produced by a line-focused glass laser(1.053 μm) on a solid carbon target. The maximum gain measured was 8 +- 1 cm/sup /minus/1/ in the recombining plasma column with additional radiation cooling by iron impurities. 10 refs., 3 figs

High sensitivity amplifier/discriminator for PWC's

International Nuclear Information System (INIS)

Hansen, S.

1983-01-01

The facility support group at Fermilab is designing and building a general purpose beam chamber for use in several locations at the laboratory. This pwc has 128 wires per plane spaced 1 mm apart. An initial production of 25 signal planes is anticipated. In proportional chambers, the size of the signal depends exponentially on the charge stored per unit of length along the anode wire. As the wire spacing decreases, the capacitance per unit length decreases, thereby requiring increased applied voltage to restore the necessary charge per unit length. In practical terms, this phenomenon is responsible for difficulties in constructing chambers with less than 2 mm wire spacing. 1 mm chambers, therefore, are frequently operated very near to their breakdown point and/or a high gain gas containing organic compounds such as magic gas is used. This argon/iso-butane mixture has three drawbacks: it is explosive when exposed to the air, it leaves a residue on the wires after extended use and is costly. An amplifier with higher sensitivity would reduce the problems associated with operating chambers with small wire spacings and allow them to be run a safe margin below their breakdown voltage even with an inorganic gas mixture such as argon/CO2, this eliminating the need to use magic gas. Described here is a low cost amplifier with a usable threshold of less than 0.5 μA. Data on the performance of this amplifier/discriminator in operation on a prototype beam chamber are given. This data shows the advantages of the high sensitivity of this design

SiGe HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers

OpenAIRE

Pan, Hsuan-yu

2010-01-01

This research work aims on exploiting SiGe HBT technologies in high dynamic range wideband RF linear-in- dB envelope detectors and linear amplifiers. First, an improved all-npn broadband highly linear SiGe HBT differential amplifier is presented based on a variation of Caprio's Quad. A broadband linear amplifier with 46dBm OIP₃ at 20MHz, 34dBm OIP₃ at 1GHz, 6dB noise figure and 10.3dBm P₁dB is demonstrated. Second, an improved exact dynamic model of a fast-settling linear-in-dB Automatic Gain...

Experimental investigation of the cascadability of a cross-gain modulation wavelength converter

DEFF Research Database (Denmark)

Zheng, Xueyan; Liu, Fenghai; Kloch, Allan

2000-01-01

by adding a fiber grating-based optical add-drop multiplexer after the semiconductor optical amplifier (SOA) to enhance the high-frequency response of the wavelength converter. However, the low-frequency degradation of the signal together with amplified spontaneous emission (ASE) noise and jitter......The cascading characteristics of a wavelength converter based on cross-gain modulation (XGM) are studied experimentally using a recirculating loop at 10 Gb/s. The maximum cascaded number of the wavelength converter converting the signal to the same wavelength is improved from five to eight...

Analysis of channel addition/removal response in all-optical gain-clamped cascade of lumped Raman fiber amplifiers

Czech Academy of Sciences Publication Activity Database

Karásek, Miroslav; Kaňka, Jiří; Radil, J.

2004-01-01

Roč. 22, č. 10 (2004), s. 2271-2278 ISSN 0733-8724 R&D Projects: GA AV ČR IAA2067202 Institutional research plan: CEZ:AV0Z2067918 Keywords : optical communication * optical fibre amplifiers * wavelength division multiplexing Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 2.113, year: 2004

Continuous-variable quantum teleportation of even and odd coherent states through varied gain channels

Institute of Scientific and Technical Information of China (English)

Li Ying; Zhang Jing; Zhang Jun-Xiang; Zhang Tian-Cai

2006-01-01

This paper has investigated quantum teleportation of even and odd coherent states in terms of the EPR entanglement states for continuous variables. It discusses the relationship between the fidelity and the entanglement of EPR states, which is characterized by the degree of squeezing and the gain of classical channels. It shows that the quality of teleporting quantum states also depends on the characteristics of the states themselves. The properties of teleporting even and odd coherent states at different intensities are investigated. The difference of teleporting two such kinds of quantum states are analysed based on the quantum distance function.

Towards a THz Backward Wave Amplifier in European FP7 OPTHER Project

DEFF Research Database (Denmark)

Dispenza, Massimiliano; Cojocaru, C.-S.; De Rossi, Alfredo

2010-01-01

-tube principles The main target specifications of the OPTHER amplifier are the following: - Operating frequency: in the band 0.3 to 2 THz - Output power: > 10 mW ( 10 dBm ) - Gain: 10 to 20 dB. The project is in the middle of its duration. Design and simulations have shown that these targets can be met...

Estimation of genetic variability among elite wheat genotypes using random amplified polymorphic DNA (RAPD) analysis

International Nuclear Information System (INIS)

BIBI, S.; Khan, I.A.; Naqvi, M.H.; Siddiqui, M.A.; Yasmeen, S.; Seema, M.

2012-01-01

Twenty four wheat varieties/lines were assessed through RAPD for genetic diversity. Of forty primers, thirteen were able to amplify the genomic DNA and yielded 269 polymorphic bands. The percentage of the polymorphic loci was 86.22%. Nei's genetic diversity (h) ranged from 0.248 to 0.393, with an average of 0.330. Shanon's index ranged from 0.382 to 0.567, with an average of 0.487. The proportion of genetic variation among the populations ( Ds) accounted for 28.58 % of the whole genetic diversity. The level of gene flow (Nm) was 1.25. Some specific RAPD bands were also identified, variety C-591, and QM-4531 contain a specific segment of 4.9 kbp. Whereas SARC-1 and PKV-1600 amplified a specific DNA segment with primer A-09. Marvi-2000 contains two specific segments of 3.2 kb and 200 bp amplified with primer B-07. Genetically most similar genotypes were C-591 and Pasban-90 (76%) and most dissimilar genotypes were Rawal-87 and Khirman (36.1%). On the basis of results, 24 wheat varieties under study could be divided into 'two' groups and five clusters 'A' to 'E. (author)

Low-order-mode harmonic multiplying gyrotron traveling-wave amplifier in W band

International Nuclear Information System (INIS)

Yeh, Y. S.; Chen, C. H.; Yang, S. J.; Lai, C. H.; Lin, T. Y.; Lo, Y. C.; Hong, J. W.; Hung, C. L.; Chang, T. H.

2012-01-01

Harmonic multiplying gyrotron traveling-wave amplifiers (gyro-TWAs) allow for magnetic field reduction and frequency multiplication. To avoid absolute instabilities, this work proposes a W-band harmonic multiplying gyro-TWA operating at low-order modes. By amplifying a fundamental harmonic TE 11 drive wave, the second harmonic component of the beam current initiates a TE 21 wave to be amplified. Absolute instabilities in the gyro-TWA are suppressed by shortening the interaction circuit and increasing wall losses. Simulation results reveal that compared with Ka-band gyro-TWTs, the lower wall losses effectively suppress absolute instabilities in the W-band gyro-TWA. However, a global reflective oscillation occurs as the wall losses decrease. Increasing the length or resistivity of the lossy section can reduce the feedback of the oscillation to stabilize the amplifier. The W-band harmonic multiplying gyro-TWA is predicted to yield a peak output power of 111 kW at 98 GHz with an efficiency of 25%, a saturated gain of 26 dB, and a bandwidth of 1.6 GHz for a 60 kV, 7.5 A electron beam with an axial velocity spread of 8%.

Distributed feedback laser amplifiers combining the functions of amplifiers and channel filters

DEFF Research Database (Denmark)

Wang, Z.; Durhuus, T.; Mikkelsen, Benny

1994-01-01

A dynamic model for distributed feedback amplifiers, including the mode coupled equations and the carrier rate equation, is established. The presented mode coupled equations have taken into account the interaction between fast changing optical signal and the waveguide with corrugations. By showin...... the possibility of amplifying 100 ps pulses without pulse broadening, we anticipate that a distributed feedback amplifier can be used as a combined amplifier and channel filter in high bit rate transmission systems....

Updated design for a low-noise, wideband transimpedance photodiode amplifier

International Nuclear Information System (INIS)

Paul, S. F.; Marsala, R.

2006-01-01

The high-speed rotation diagnostic developed for Columbia's HBT-EP tokamak requires a high quantum efficiency, very low drift detector/amplifier combination. An updated version of the circuit developed originally for the beam emission spectroscopy experiment on TFTR is being used. A low dark current (2 nA at 15 V bias), low input source capacitance (2 pF) FFD-040 N-type Si photodiode is operated in photoconductive mode. It has a quantum efficiency of 40% at the 468.6 nm (He II line that is being observed). A low-noise field-effect transistor (InterFET IFN152 with e Na =1.2 nV/√Hz) is used to reduce the noise in the transimpedance preamplifier (A250 AMPTEK op-amp) and a very high speed (unity-gain bandwidth=200 MHz) voltage feedback amplifier (LM7171) is used to restore the frequency response up to 100 kHz. This type of detector/amplifier is photon-noise limited at this bandwidth for incident light with a power of >∼2 nW. The circuit has been optimized using SIMETRIX 4.0 SPICE software and a prototype circuit has been tested successfully. Though photomultipliers and avalanche photodiodes can detect much lower light levels, for light levels >2 nW and a 10 kHz bandwidth, this detector/amplifier combination is more sensitive because of the absence of excess (internally generated) noise

Gain media edge treatment to suppress amplified spontaneous emission in a high power laser

Science.gov (United States)

Hackel, Lloyd A.; Soules, Thomas F.; Fochs, Scott N.; Rotter, Mark D.; Letts, Stephan A.

2008-12-09

A novel method and apparatus for suppressing ASE and parasitic oscillation modes in a high average power laser is introduced. By roughening one or more peripheral edges of a solid-state crystal or ceramic laser gain media and by bonding such edges using a substantially high index bonding elastomer or epoxy to a predetermined electromagnetic absorbing arranged adjacent to the entire outer surface of the peripheral edges of the roughened laser gain media, ASE and parasitic oscillation modes can be effectively suppressed.

Self-slowdown and -advancement of fs pulses in a quantum-dot semiconductor optical amplifier

DEFF Research Database (Denmark)

Poel, Mike van der; Mørk, Jesper; Hvam, Jørn Märcher

2005-01-01

We demonstrate changes in the propagation time of 180 femtosecond pulses in a quantum-dot semiconductor optical amplifier as function of pulse input power and bias current. The results interpreted as a result of pulse reshaping by gain saturation but are also analogous to coherent population osci...

Maximizing power output from continuous-wave single-frequency fiber amplifiers.

Science.gov (United States)

Ward, Benjamin G

2015-02-15

This Letter reports on a method of maximizing the power output from highly saturated cladding-pumped continuous-wave single-frequency fiber amplifiers simultaneously, taking into account the stimulated Brillouin scattering and transverse modal instability thresholds. This results in a design figure of merit depending on the fundamental mode overlap with the doping profile, the peak Brillouin gain coefficient, and the peak mode coupling gain coefficient. This figure of merit is then numerically analyzed for three candidate fiber designs including standard, segmented acoustically tailored, and micro-segmented acoustically tailored photonic-crystal fibers. It is found that each of the latter two fibers should enable a 50% higher output power than standard photonic crystal fiber.

Constant Switching Frequency Self-Oscillating Controlled Class-D Amplifiers

DEFF Research Database (Denmark)

Nguyen-Duy, Khiem; Knott, Arnold; Andersen, Michael A. E.

2014-01-01

The self-oscillating control approach has been used extensively in class-D amplifiers. It has several advantages such as high bandwidth and high audio performance. However, one of the primary disadvantages in a self-oscillating controlled system is that the switching frequency of the amplifier...... varies with the ratio of the output voltage to the input rail voltage. In other words, the switching frequency varies with the duty cycle of the output. The drop in the frequency results in lower control bandwidth and higher output voltage ripple, which are undesirable. This paper proposes a new self-oscillating...... control scheme that maintains a constant switching frequency over the full range of output voltage. The frequency difference is processed by a compensator whose output adjusts the total loop gain of the control system. It has been proven by simulation that a con-stant switching frequency self-oscillating...

Mutually-modulated cross-gain modulation and slow light

International Nuclear Information System (INIS)

Sternklar, Shmuel; Sarid, Eyal; Wart, Maxim; Granot, Er'el

2010-01-01

The interaction of pump and Stokes light in a Brillouin medium, where both beams are modulated, can be utilized for controlling the group velocity of the amplified Stokes (or depleted pump). The dependence of the group velocity for this mutually-modulated cross-gain modulation (MMXGM) technique on the Brillouin gain parameter is studied. A sharp transition to slow light occurs in the G 1 α/β≈1 regime, where G 1 is the Brillouin gain parameter, and α and β are the pump and Stokes modulation indices, respectively. A comparison of MMXGM slow light to the Brillouin dispersion-based slow-light technique reveals the fundamental differences between them. The formation of higher harmonics of the modulation frequency is also discussed. The theoretical predictions are experimentally corroborated and potential applications in fiber-based sensing and interferometry are discussed

Design and study of photomultiplier pulse-shaping amplifier powered by the current flowing through a voltage divider

International Nuclear Information System (INIS)

Vladimir Popov

2003-01-01

A new version of Photomultiplier Tube (PMT) pulse amplifier, entirely powered by the current flowing through the base voltage divider, was designed and tested. This amplifier was designed for application in the JLAB G0 Experiment E00-006 as a part of high voltage base for XP2262 Photonis PMT. According to JLAB G0 experiment requirement, these PMT's operate with plastic scintillators at high counting rate (about MHz). Tests in JLAB experimental Hall C indicate that low energy gamma background cause up to 0.1 mA of PMT average anode current (without amplifier). At this radiation condition, PMT gain decreases by 50% within about 1 month of operation. The amplifier needs to reduce PMT anode current and to shape PMT anode pulse prior to sending it through a long cable line (more then 400 ft of RG-213 and RG-58 coax cables). Shaping of the PMT output pulse helps to reduce attenuation effect of the long cable line without significant reduction of timing accuracy. The results of this study of designed amplifier and PMT plus amplifier system are presented

Dynamic Characteristics of S-band DC SQUID Amplifier

DEFF Research Database (Denmark)

Prokopenko, G. V.; Shitov, S. V.; Koshelets, I. L. L. V. P.

2003-01-01

A low-noise rf amplifier based on a de SQUID (SQA) has been tested in the frequency range 3.0-4.6 GHz in the open-loop configuration. The following parameters have been measured for the single-stage balanced type SQA at 4.0 GHz: gain (12 +/- 1) dB, 3 dB bandwidth of 500 MHz and noise temperature (1.......0 +/- 0.25) K. For the nonbalanced type SQA at 4.0 GHz gain was (15 +/-1) dB, 3 dB bandwidth 200 MHz and noise temperature (0.5 +/- 0.25) K. The improved performance is obtained due to the increased characteristic voltage (approximate to 420 muV) of the small-area (down to 0.7-0.9 mum(2)) high-quality Nb......-AlOx-Nb SIS junctions. The saturation power (normalized to 1 GHz) referred to the input at 1 dB gain compression is estimated as approximate to55 K*GHz at a bias voltage of 60 muV. The reasons for saturation of the SQA are discussed....

Broadband spectral shaping in regenerative amplifier based on modified polarization-encoded chirped pulse amplification

Science.gov (United States)

Wang, Xinliang; Lu, Xiaoming; Liu, Yanqi; Xu, Yi; Wang, Cheng; Li, Shuai; Yu, Linpeng; Liu, Xingyan; Liu, Keyang; Xu, Rongjie; Leng, Yuxin

2018-06-01

We present an intra-cavity spectral shaping method to suppress the spectral narrowing in a Ti:sapphire (Ti:Sa) regenerative amplifier. The spectral shaping is realized by manipulating the stored energies of two Ti:Sa crystals with orthogonal c-axes, changing the length of a quartz plate, and rotating a broadband achromatic half-wave plate. Using this method, in our proof-of-concept experiment, an 84-nm-(FWHM)-broadband amplified pulse with an energy gain larger than 106 is obtained, which supports a 17.8 fs Fourier-transform-limited pulse duration. The pulse is compressed to 18.9 fs.

Characterization of an erbium doped fiber amplifier starting from its experimental parameters; Caracterizacion de un amplificador de fibra dopada con erbio a partir de sus parametros experimentales

Energy Technology Data Exchange (ETDEWEB)

Bello J, M.; Kuzin, E.A.; Ibarra E, B. [Instituto Nacional de Astrofisica, Optica y Electronica (INAOE), Luis Enrique Erro No. 1, TonantzintIa, 72000 Puebla (Mexico); Tellez G, R. [Instituto Mexicano del Petroleo, Eje Central Lazaro Cardenas No 152, Delegacion Gustavo A. Madero, 07730 Mexico D.F. (Mexico)]. e-mail: mabello@inaoep.mx

2007-07-01

In this paper we describe a method to characterize the gain of an erbium-doped fiber amplifier (EDFA) through the numerical simulation of the signal beam along the amplifier. The simulation is based on a model constituted by the propagation and rate equations for an erbium-doped fiber. The manipulation of these equations allows us to regroup the parameters present in an EDFA, which we have named the A, B, C, D parameters, and they can be obtained experimentally from an erbium-doped fiber. Experimental results show that the measurement of these parameters allow us to estimate with very good correspondence the amplifier gain. (Author)

CERN-group conceptual design of a fast neutron operated high power energy amplifier

International Nuclear Information System (INIS)

Rubbia, C.; Rubio, J.A.; Buono, S.

1997-01-01

The practical feasibility of an Energy Amplifier (EA) with power and power density which are comparable to the ones of the present generation of large PWR is discussed in this paper. This is only possible with fast neutrons. Schemes are described which offer a high gain, a large maximum power density and an extended burn-up, well in excess of 100 GW x d/t corresponding to about five years at full power operation with no intervention on the fuel core. The following topics are discussed: physics considerations and parameter definition, the accelerator complex, the energy amplifier unit, computer simulated operation, and fuel cycle closing

CERN-group conceptual design of a fast neutron operated high power energy amplifier

Energy Technology Data Exchange (ETDEWEB)

Rubbia, C; Rubio, J A [European Organization for Nuclear Research, CERN, Geneva (Switzerland); Buono, S [Laboratoire du Cyclotron, Nice (France); and others

1997-11-01

The practical feasibility of an Energy Amplifier (EA) with power and power density which are comparable to the ones of the present generation of large PWR is discussed in this paper. This is only possible with fast neutrons. Schemes are described which offer a high gain, a large maximum power density and an extended burn-up, well in excess of 100 GW x d/t corresponding to about five years at full power operation with no intervention on the fuel core. The following topics are discussed: physics considerations and parameter definition, the accelerator complex, the energy amplifier unit, computer simulated operation, and fuel cycle closing. 84 refs, figs, tabs.

Pulsed neutron logging system for inelastic scattering gamma rays with gain compensation

International Nuclear Information System (INIS)

Schultz, W.E.; Smith, H.D. Jr.

1976-01-01

An illustrative embodiment of the invention includes methods for linearizing the gain of borehole gamma ray energy measurement apparatus. A known energy peak (or peaks) which is prominent in the gamma ray energy spectra of borehole measurements is monitored and any drift in its apparent location in the energy spectrum is used to generate an error voltage. The error voltage is applied in an inverse feedback manner to control the gain of system amplifiers to cancel the drift

Reduction of operational amplifiers finite gain effects in switched-capacitor biquads

Directory of Open Access Journals (Sweden)

Radev Nikolay

2005-01-01

Full Text Available A combined approach for reducing the errors in the pole frequency f p, the pole Q - factor Qp and the magnitude at the pole frequency Hp, of switched capacitor biquads is presented. First, the conventional integrators in the biquads are replaced with gain-and offset-compensated integrators. Next, the errors Δ ƒp / ƒp, Δ Qp / Qp and Δ Hp / Hp are minimized by modifying three capacitances: two feedback capacitances and feed forward capacitance. The effectiveness of this approach is demonstrated by designing a band pass biquad.

Two-stage optical parametric chirped-pulse amplifier using sub-nanosecond pump pulse generated by stimulated Brillouin scattering compression

Science.gov (United States)

Ogino, Jumpei; Miyamoto, Sho; Matsuyama, Takahiro; Sueda, Keiichi; Yoshida, Hidetsugu; Tsubakimoto, Koji; Miyanaga, Noriaki

2014-12-01

We demonstrate optical parametric chirped-pulse amplification (OPCPA) based on two-beam pumping, using sub-nanosecond pulses generated by stimulated Brillouin scattering compression. Seed pulse energy, duration, and center wavelength were 5 nJ, 220 ps, and ˜1065 nm, respectively. The 532 nm pulse from a Q-switched Nd:YAG laser was compressed to ˜400 ps in heavy fluorocarbon FC-40 liquid. Stacking of two time-delayed pump pulses reduced the amplifier gain fluctuation. Using a walk-off-compensated two-stage OPCPA at a pump energy of 34 mJ, a total gain of 1.6 × 105 was obtained, yielding an output energy of 0.8 mJ. The amplified chirped pulse was compressed to 97 fs.

Design and implementation of a wireless (Bluetooth) four channel bio-instrumentation amplifier and digital data acquisition device with user-selectable gain, frequency, and driven reference.

Science.gov (United States)

Cosmanescu, Alin; Miller, Benjamin; Magno, Terence; Ahmed, Assad; Kremenic, Ian

2006-01-01

A portable, multi-purpose Bio-instrumentation Amplifier and Data AcQuisition device (BADAQ) capable of measuring and transmitting EMG and EKG signals wirelessly via Bluetooth is designed and implemented. Common topologies for instrumentation amplifiers and filters are used and realized with commercially available, low-voltage, high precision operational amplifiers. An 8-bit PIC microcontroller performs 10-bit analog-to-digital conversion of the amplified and filtered signals and controls a Bluetooth transceiver capable of wirelessly transmitting the data to any Bluetooth enabled device. Electrical isolation between patient/subject, circuitry, and ancillary equipment is achieved by optocoupling components. The design focuses on simplicity, portability, and affordability.

Gain-switched all-fiber laser with narrow bandwidth

DEFF Research Database (Denmark)

Larsen, Casper; Giesberts, M.; Nyga, S.

2013-01-01

pulse energy is 20 μJ in a duration of 135 ns at 7 kHz. The bandwidth increases for a higher pump pulse energy and repetition rate, and this sets the limit of the output pulse energy. A single power amplifier is added to raise the peak power to the kW-level and the pulse energy to 230 μJ while keeping......Gain-switching of a CW fiber laser is a simple and cost-effective approach to generate pulses using an all-fiber system. We report on the construction of a narrow bandwidth (below 0.1 nm) gain-switched fiber laser and optimize the pulse energy and pulse duration under this constraint. The extracted...

Amplified Spontaneous Emission of Organic Pyridinium Dye doped Polymeric Waveguide

International Nuclear Information System (INIS)

Jun, Xi; Li-Hua, Ye; Qiong, Wang; Deng, Xu; Chang-Gui, Lu; Guo-Hua, Hu; Yi-Ping, Cui

2009-01-01

An organic dye salt trans-4-[p-(N-hydroxyethyl-N-methylamino)styryl]-N-methylpyridinium iodide (ASPI) is doped with an electron transport organic molecule tris(8-hydroxyquinoline) aluminium (Alq3) in a host matrix of poly(methylmethacrylate) (PMMA), and the amplified spontaneous emission (ASE) is studied. By efficient Forster energy transfer from Alq3 to ASPI, it is demonstrated that the ASE threshold of ASPI:Alq3:PMMA waveguide (about 11μJ/pulse) is much lower than that of ASPI:PMMA system (about 38μJ/pulse). Meanwhile, the peak position of ASE can be controlled by the effect of film thickness on waveguide modes. We show that the ASE peak position can be tuned over 37nm. These characteristics indicate the ASPI:Alq3 system as a promising gain medium for optical amplifiers and organic semiconductor lasers

A high efficiency Ku-band radial line relativistic klystron amplifier

Energy Technology Data Exchange (ETDEWEB)

Dang, Fangchao; Zhang, Xiaoping, E-mail: zhangxiaoping@nudt.edu.cn; Zhong, Huihuang; Zhang, Jun; Ju, Jinchuan [College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

2016-07-15

To achieve the gigawatt-level microwave amplification output at Ku-band, a radial-line relativistic klystron amplifier is proposed and investigated in this paper. Different from the annular electron beam in conventional axial relativistic klystron amplifiers, a radial-radiated electron beam is employed in this proposed klystron. Owing to its radially spreading speciality, the electron density and space charge effect are markedly weakened during the propagation in the radial line drift tube. Additionally, the power capacity, especially in the output cavity, is enhanced significantly because of its large volume, which is profitable for the long pulse operation. Particle-in-cell simulation results demonstrate that a high power microwave with the power of 3 GW and the frequency of 14.25 GHz is generated with a 500 kV, 12 kA electron beam excitation and the 30 kW radio-frequency signal injection. The power conversion efficiency is 50%, and the gain is about 50 dB. Meanwhile, there is insignificant electron beam self-excitation in the proposed structure by the adoption of two transverse electromagnetic reflectors. The relative phase difference between the injected signals and output microwaves keeps stable after the amplifier saturates.

Optimal Design of a Traveling-Wave Kinetic Inductance Amplifier Operated in Three-Wave Mixing Mode

Science.gov (United States)

Erickson, Robert; Bal, Mustafa; Ku, Ksiang-Sheng; Wu, Xian; Pappas, David

In the presence of a DC bias, an injected pump, of frequency fP, and a signal, of frequency fS, undergo parametric three-way mixing (3WM) within a traveling-wave kinetic inductance (KIT) amplifier, producing an idler product of frequency fI =fP -fS . Periodic frequency stops are engineered into the coplanar waveguide of the device to enhance signal amplification. With fP placed just above the first frequency stop gap, 3WM broadband signal gain is achieved with maximum gain at fS =fP / 2 . Within a theory of the dispersion of traveling waves in the presence of these engineered loadings, which accounts for this broadband signal gain, we show how an optimal frequency-stop design may be constructed to achieve maximum signal amplification. The optimization approach we describe can be applied to the design of other nonlinear traveling-wave parametric amplifiers. This work was supported by the Army Research Office and the Laboratory for Physical Sciences under EAO221146, EAO241777, and the NIST Quantum Initiative. RPE acknowledges Grant 60NANB14D024 from the US Department of Commerce, NIST.

A low-noise transimpedance amplifier for the detection of "Violin-Mode" resonances in advanced Laser Interferometer Gravitational wave Observatory suspensions

Science.gov (United States)

Lockerbie, N. A.; Tokmakov, K. V.

2014-11-01

This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level "Violin-Mode" (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent "noise-gain peaking" arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations—this output being derived from the difference of the photodiodes' two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m-1(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.

A low-noise transimpedance amplifier for the detection of "Violin-Mode" resonances in Advanced Laser Interferometer Gravitational wave Observatory suspensions.

Science.gov (United States)

Lockerbie, N A; Tokmakov, K V

2014-11-01

This paper describes the design and performance of an extremely low-noise differential transimpedance amplifier, which takes its two inputs from separate photodiodes. The amplifier was planned to serve as the front-end electronics for a highly sensitive shadow-displacement sensing system, aimed at detecting very low-level "Violin-Mode" (VM) oscillations in 0.4 mm diameter by 600 mm long fused-silica suspension fibres. Four such highly tensioned fibres support the 40 kg test-masses/mirrors of the Advanced Laser Interferometer Gravitational wave Observatory interferometers. This novel design of amplifier incorporates features which prevent "noise-gain peaking" arising from large area photodiode (and cable) capacitances, and which also usefully separate the DC and AC photocurrents coming from the photodiodes. In consequence, the differential amplifier was able to generate straightforwardly two DC outputs, one per photodiode, as well as a single high-gain output for monitoring the VM oscillations-this output being derived from the difference of the photodiodes' two, naturally anti-phase, AC photocurrents. Following a displacement calibration, the amplifier's final VM signal output was found to have an AC displacement responsivity at 500 Hz of (9.43 ± 1.20) MV(rms) m(-1)(rms), and, therefore, a shot-noise limited sensitivity to such AC shadow- (i.e., fibre-) displacements of (69 ± 13) picometres/√Hz at this frequency, over a measuring span of ±0.1 mm.

Recent progress of erbium-doped fiber amplifiers and their components

Science.gov (United States)

Fukushima, Masaru; Miura, Jutaro

2007-09-01

The Erbium-doped fiber amplifiers (EDFA) are widely available in a today's commercial market, and are deployed in various optical transmission applications from terrestrial system to undersea system. Broad gain spectrum over 9 THz enabled huge growth of bandwidth usage in 1550nm region aimed at broadband Internet, and its broad gain characteristics triggered bandwidth competition on dense wavelength division multiplex (DWDM) network these ten years. At first, we briefly review the evolutional history of EDFA with previous achievements. And we will explain the primary and important key devices which compose EDFA. We will discuss design parameters, and recent trend and achievements of the devices, which cover Erbium-doped fibers (EDF), 980-nm laser diodes (LD), and gain flattening filters (GFFs). The chip structure of 980-nm LD is explained to achieve high power and to realize high reliability. These key devices enabled EDFA to prevail in commercial area. After the discussion of key components, we will introduce recent achievements of gain controlled EDFAs which are applied in conjunction with Re-configurable Optical Add/Drop Multiplexer (ROADM). We will report the transient gain dynamics of the cascaded EDFAs with a recirculating loop experiment.

A 0.8V, 7μA, rail-to-rail input/output, constant Gm operational amplifier in standard digital 0.18μm CMOS

OpenAIRE

Citakovic, J; Nielsen, I. Riis; Nielsen, Jannik Hammel; Asbeck, P; Andreani, Pietro

2005-01-01

A two-stage amplifier, operational at 0.8V and drawing 7μA, has been integrated in a standard digital 0.18μm CMOS process. Rail-to-rail operations at the input are enabled by complementary transistor pairs with gm control. The efficient rail-to-rail output stage is biased in class AB. The measured DC gain of the amplifier is 75dB, and the unity-gain frequency is 870kHz with a 12pF, 100kΩload. Both input and output stage transistors are biased in weak inversion.

Antares laser power amplifier

International Nuclear Information System (INIS)

Stine, R.D.; Ross, G.F.; Silvernail, C.

1979-01-01

The overall design of the Antares laser power amplifier is discussed. The power amplifier is the last stage of amplification in the 100-kJ Antares laser. In the power amplifier a single, cylindrical, grid-controlle, cold-cathode electron gun is surrounded by 12 large-aperture CO 2 electron-beam sustained laser discharge sectors. Each power amplifier will deliver 18 kJ and the six modules used in Antares will produce the required 100 kJ for delivery to the target. A large-scale interaction between optical, mechanical, and electrical disciplines is required to meet the design objectives. Significant component advances required by the power amplifier design are discussed

A Wide-Band High-Gain Compact SIS Receiver Utilizing a 300-μW SiGe IF LNA

Science.gov (United States)

Montazeri, Shirin; Grimes, Paul K.; Tong, Cheuk-Yu Edward; Bardin, Joseph C.

2017-06-01

Low-power low-noise amplifiers integrated with superconductor-insulator-superconductor (SIS) mixers are required to enable implementation of large-scale focal plane arrays. In this work, a 220-GHz SIS mixer has been integrated with a high-gain broad-band low-power IF amplifier into a compact receiver module. The low noise amplifier (LNA) was specifically designed to match to the SIS output impedance and contributes less than 7 K to the system noise temperature over the 4-8 GHz IF frequency range. A receiver noise temperature of 30-45 K was measured for a local oscillator frequency of 220 GHz over an IF spanning 4-8 GHz. The LNA power dissipation was only 300-μW. To the best of the authors' knowledge, this is the lowest power consumption reported for a high-gain wide-band LNA directly integrated with an SIS mixer.

Nonlinear theory of a cyclotron autoresonance maser (CARM) amplifier with outer-slotted-coaxial waveguide

International Nuclear Information System (INIS)

Qiu Chunrong; Ouyang Zhengbiao; Zhang Shichang; Zhang Huibo; Jin Jianbo; Lai Yingxin

2005-01-01

A self-consistent nonlinear theory for the outer-slotted-coaxial-waveguide cyclotron autoresonance maser (CARM) amplifier is presented, which includes the characteristic equation of the wave, coupling equation of the wave with the relativistic electron beam and the simulation model. The influences of the magnetic field, the slot depth and width are investigated. The interesting characteristic of the device is that the mode competition can be efficiently suppressed by slotting the outer wall of the coaxial waveguide. A typical example is given by the theoretical design of a 137 GHz outer-slotted-coaxial-waveguide CARM amplifier by utilizing an electron beam with a voltage of 90 kV, current of 50 A, velocity pitch angle of 0.85 and a magnetic field of 43.0 kG. The nonlinear simulation predicts a power of 467.9 kW, an electronic efficiency of 10.4% and a saturated gain of 46.7 dB, if the electron beam has no velocity spread. However, the axial velocity spread deteriorates the device; for example, if the axial velocity spread is 2%, the peak power decreases to 332.4 kW with an efficiency of 7.4% and a saturated gain of 45.22 dB. Simulation shows that the efficiency of the outer-slotted-coaxial-waveguide CARM amplifier may be increased from 10.4% to 29.6% by tapering the magnetic field

Measurements and Studies of Secondary Electron Emission of Diamond Amplified Photocathode

Energy Technology Data Exchange (ETDEWEB)

Wu,Q.

2008-10-01

experiments were carried out to determine the transport of the electrons within the diamond and their emission at the surface. In transmission mode measurements, the diamond amplifier was coated with metal on both sides, so results simply depend only on the electron transport within the diamond. The SEY for this mode provides one secondary electron per 20eV energy, which gives the gain of more than 200 for 4.7keV (effective energy) primary electrons under 2MV/m. Laser detrapping can help the signal maintain the gain with lops pulse and duty cycle of 1.67 x 10{sup -7}. In emission mode measurements, in which the diamond is prepared as in the actual application, the SEY is {approx}20 for 700eV (effective energy) primary electrons under 1.21MV/m. The electric field applied and the primary electron energy is limited by the experiment setup, but the results show good trend toward large gain under high field. Thermal emittance of the diamond secondary emission is critical for the beam application. A careful design is setup to measure with very fine precision and accuracy of 0.01eV.

Generation of 103 fs mode-locked pulses by a gain linewidth-variable Nd,Y:CaF2 disordered crystal.

Science.gov (United States)

Qin, Z P; Xie, G Q; Ma, J; Ge, W Y; Yuan, P; Qian, L J; Su, L B; Jiang, D P; Ma, F K; Zhang, Q; Cao, Y X; Xu, J

2014-04-01

We have demonstrated a diode-pumped passively mode-locked femtosecond Nd,Y:CaF2 disordered crystal laser for the first time to our knowledge. By choosing appropriate Y-doping concentration, a broad fluorescence linewidth of 31 nm has been obtained from the gain linewidth-variable Nd,Y:CaF2 crystal. With the Nd,Y:CaF2 disordered crystal as gain medium, the mode-locked laser generated pulses with pulse duration as short as 103 fs, average output power of 89 mW, and repetition rate of 100 MHz. To our best knowledge, this is the shortest pulse generated from Nd-doped crystal lasers so far. The research results show that the Nd,Y:CaF2 disordered crystal will be a potential alternative as gain medium of repetitive chirped pulse amplification for high-peak-power lasers.

Sensory Gain Outperforms Efficient Readout Mechanisms in Predicting Attention-Related Improvements in Behavior

Science.gov (United States)

Ester, Edward F.; Deering, Sean

2014-01-01

Spatial attention has been postulated to facilitate perceptual processing via several different mechanisms. For instance, attention can amplify neural responses in sensory areas (sensory gain), mediate neural variability (noise modulation), or alter the manner in which sensory signals are selectively read out by postsensory decision mechanisms (efficient readout). Even in the context of simple behavioral tasks, it is unclear how well each of these mechanisms can account for the relationship between attention-modulated changes in behavior and neural activity because few studies have systematically mapped changes between stimulus intensity, attentional focus, neural activity, and behavioral performance. Here, we used a combination of psychophysics, event-related potentials (ERPs), and quantitative modeling to explicitly link attention-related changes in perceptual sensitivity with changes in the ERP amplitudes recorded from human observers. Spatial attention led to a multiplicative increase in the amplitude of an early sensory ERP component (the P1, peaking ∼80–130 ms poststimulus) and in the amplitude of the late positive deflection component (peaking ∼230–330 ms poststimulus). A simple model based on signal detection theory demonstrates that these multiplicative gain changes were sufficient to account for attention-related improvements in perceptual sensitivity, without a need to invoke noise modulation. Moreover, combining the observed multiplicative gain with a postsensory readout mechanism resulted in a significantly poorer description of the observed behavioral data. We conclude that, at least in the context of relatively simple visual discrimination tasks, spatial attention modulates perceptual sensitivity primarily by modulating the gain of neural responses during early sensory processing PMID:25274817

Effect of pulse width on near-infrared supercontinuum generation in nonlinear fiber amplifier

Science.gov (United States)

Song, Rui; Lei, Cheng-Min; Chen, Sheng-Ping; Wang, Ze-Feng; Hou, Jing

2015-08-01

The effect of pulse width on near-infrared supercontinuum generation in nonlinear fiber amplifier is investigated theoretically and experimentally. The complex Ginzburg-Landau equation and adaptive split-step Fourier method are used to simulate the propagation of pulses with different pulse widths in the fiber amplifier, and the results show that a longer pulse is more profitable in near-infrared supercontinuum generation if the central wavelength of the input laser lies in the normal dispersion region of the gain fiber. A four-stage master oscillator power amplifier configuration is adopted and the output spectra under picosecond and nanosecond input pulses are compared with each other. The experimental results are in good accordance with the simulations which can provide some guidance for further optimization of the system. Project supported by the National Natural Science Foundation of China (Grant Nos. 11404404 and 11274385) and the Outstanding Youth Fund Project of Hunan Province and the Fund of Innovation of National University of Defense Technology, China (Grant No. B120701).

All-optical wavelength conversion at bit rates above 10 Gb/s using semiconductor optical amplifiers

DEFF Research Database (Denmark)

Jørgensen, Carsten; Danielsen, Søren Lykke; Stubkjær, Kristian

1997-01-01

This work assesses the prospects for high-speed all-optical wavelength conversion using the simple optical interaction with the gain in semiconductor optical amplifiers (SOAs) via the interband carrier recombination. Operation and design guidelines for conversion speeds above 10 Gb/s are described...... and the various tradeoffs are discussed. Experiments at bit rates up to 40 Gb/s are presented for both cross-gain modulation (XGM) and cross-phase modulation (XPM) in SOAs demonstrating the high-speed capability of these techniques...

Operational amplifiers

CERN Document Server

Dostal, Jiri

1993-01-01

This book provides the reader with the practical knowledge necessary to select and use operational amplifier devices. It presents an extensive treatment of applications and a practically oriented, unified theory of operational circuits.Provides the reader with practical knowledge necessary to select and use operational amplifier devices. Presents an extensive treatment of applications and a practically oriented, unified theory of operational circuits

A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

International Nuclear Information System (INIS)

Li Ou-Peng; Zhang Yong; Xu Rui-Min; Cheng Wei; Wang Yuan; Niu Bing; Lu Hai-Yan

2016-01-01

Design and characterization of a G-band (140–220 GHz) terahertz monolithic integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm InGaAs/InP double heterojunction bipolar transistor (DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the InP substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are −2.688 dBm at 210 GHz and −2.88 dBm at 220 GHz, respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications. (paper)

Modeling the energy deposition in the Aurora KrF laser amplifier chain

International Nuclear Information System (INIS)

Comly, J.C.; Czuchlewski, S.J.; Greene, D.P.; Hanson, D.E.; Krohn, B.J.; McCown, A.W.

1988-01-01

Monte Carlo calculations model the energy depositions by highly energetic electron beams into the cavities of the four KrF laser amplifiers in the Aurora chain. Deposited energy density distributions are presented and studied as functions of e-beam energy and gas pressure. Results are useful for analyzing small signal gain (SSG) measurements and optimizing deposition in future experiments. 7 refs., 7 figs., 1 tab

An optical parametric chirped-pulse amplifier for seeding high repetition rate free-electron lasers

International Nuclear Information System (INIS)

Höppner, H; Hage, A; Tanikawa, T; Schulz, M; Faatz, B; Riedel, R; Prandolini, M J; Teubner, U; Tavella, F

2015-01-01

High repetition rate free-electron lasers (FEL), producing highly intense extreme ultraviolet and x-ray pulses, require new high power tunable femtosecond lasers for FEL seeding and FEL pump-probe experiments. A tunable, 112 W (burst mode) optical parametric chirped-pulse amplifier (OPCPA) is demonstrated with center frequencies ranging from 720–900 nm, pulse energies up to 1.12 mJ and a pulse duration of 30 fs at a repetition rate of 100 kHz. Since the power scalability of this OPCPA is limited by the OPCPA-pump amplifier, we also demonstrate a 6.7–13.7 kW (burst mode) thin-disk OPCPA-pump amplifier, increasing the possible OPCPA output power to many hundreds of watts. Furthermore, third and fourth harmonic generation experiments are performed and the results are used to simulate a seeded FEL with high-gain harmonic generation. (paper)

Gigawatt peak power generation in a relativistic klystron amplifier driven by 1 kW seed-power

Energy Technology Data Exchange (ETDEWEB)

Wu, Y. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China); Science and Technology on High Power Microwave Laboratory, Mianyang 621900 (China); Xie, H. Q. [College of Science, Southwestern University of Science and Technology, Mianyang 621010 (China); Li, Z. H.; Zhang, Y. J.; Ma, Q. S. [Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang 621900 (China)

2013-11-15

An S-band high gain relativistic klystron amplifier driven by kW-level RF power is proposed and studied experimentally. In the device, the RF lossy material is introduced to suppress higher mode excitation. An output power of 1.95 GW with a gain of 62.8 dB is obtained in the simulation. Under conditions of an input RF power of 1.38 kW, a microwave pulse with power of 1.9 GW, frequency of 2.86 GHz, and duration of 105 ns is generated in the experiment, and the corresponding gain is 61.4 dB.

Gigawatt peak power generation in a relativistic klystron amplifier driven by 1 kW seed-power

Science.gov (United States)

Wu, Y.; Xie, H. Q.; Li, Z. H.; Zhang, Y. J.; Ma, Q. S.

2013-11-01

An S-band high gain relativistic klystron amplifier driven by kW-level RF power is proposed and studied experimentally. In the device, the RF lossy material is introduced to suppress higher mode excitation. An output power of 1.95 GW with a gain of 62.8 dB is obtained in the simulation. Under conditions of an input RF power of 1.38 kW, a microwave pulse with power of 1.9 GW, frequency of 2.86 GHz, and duration of 105 ns is generated in the experiment, and the corresponding gain is 61.4 dB.

Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm

International Nuclear Information System (INIS)

Andreeva, E V; Il'chenko, S N; Lobintsov, A A; Shramenko, M V; Ladugin, M A; Marmalyuk, A A; Yakubovich, S D

2013-01-01

A line of travelling-wave semiconductor optical amplifiers (SOAs) based on heterostructures used for production of broadband superluminescent diodes is developed. The pure small-signal gains of the developed SOA modules are about 25 dB, while the gain bandwidths at a level of –10 dB reach 50 – 100 nm. As a whole, the SOA modules cover the IR spectral range from 750 to 1100 nm. The SOAs demonstrate a high reliability at a single-mode fibre-coupled cw output power up to 50 mW. Examples of application of two of the developed SOA modules as active elements of broadband fast-tunable lasers are presented. (lasers)

Broadband semiconductor optical amplifiers of the spectral range 750 – 1100 nm

Energy Technology Data Exchange (ETDEWEB)